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Sample records for radiation hard semiconductor

  1. Radiation-Hardness Data For Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  2. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  3. A New Radiation Hard Semiconductor — Semi-Insulating GaN: Photoelectric Properties

    NASA Astrophysics Data System (ADS)

    Vaitkus, J.; Gaubas, E.; Kazukauskas, V.; Blue, A.; Cunningham, W.; Rahman, M.; Smith, K.; Sakai, S.

    2005-06-01

    The anticipated upgrade of the CERN Large Hadron Collider to ten times brighter luminosity poses a severe challenge to semiconductor detectors in the CERN experiments. The suitability of semi-insulating GaN (SI-GaN), proposed as an alternative to silicon for the fabrication of radiation hard detectors, is investigated here in MOCVD GaN layers grown on sapphire. The electrical properties of SI-GaN were studied by dc and microwave techniques, and defect parameters determined by the method of thermally stimulated currents. Variations of charge collection efficiency (CCE) in SI-GaN diodes induced by ionizing radiation of 5.48 MeV alpha particles were revealed. Samples were also irradiated by X-rays, reactor neutrons and high-energy proton fluences of up to 1016 cm-2. The high radiation hardness of SI-GaN was demonstrated by the modest reduction in CCE, from 92% to 77%, in the material irradiated by neutrons (up to a fluence of 1015 cm-2). The CCE was unaffected by an X-rays dose of 600 MRad), but decreased to a few % after proton and neutron fluences of 1016 cm-2. The electrical characteristics vary more significantly, depending on irradiation type and dose. Fast decay components and a significant role of percolation effects are observed in the photoconductivity transients.

  4. Radiation hardness of semiconductor avalanche detectors for calorimeters in future HEP experiments

    NASA Astrophysics Data System (ADS)

    Kushpil, V.; Mikhaylov, V.; Kugler, A.; Kushpil, S.; Ladygin, V. P.; Svoboda, O.; Tlustý, P.

    2016-02-01

    During the last years, semiconductor avalanche detectors are being widely used as the replacement of classical PMTs in calorimeters for many HEP experiments. In this report, basic selection criteria for replacement of PMTs by solid state devices and specific problems in the investigation of detectors radiation hardness are discussed. The design and performance of the hadron calorimeters developed for the future high energy nuclear physics experiments at FAIR, NICA, and CERN are discussed. The Projectile Spectator Detector (PSD) for the CBM experiment at the future FAIR facility, the Forward Calorimeter for the NA61 experiment at CERN and the Multi Purpose Detector at the future NICA facility are reviewed. Moreover, new methods of data analysis and results interpretation for radiation experiments are described. Specific problems of development of detectors control systems and possibilities of reliability improvement of multi-channel detectors systems are shortly overviewed. All experimental material is based on the investigation of SiPM and MPPC at the neutron source in NPI Rez.

  5. Radiation from hard objects

    SciTech Connect

    Canavan, G.H.

    1997-02-01

    The inference of the diameter of hard objects is insensitive to radiation efficiency. Deductions of radiation efficiency from observations are very sensitive - possibly overly so. Inferences of the initial velocity and trajectory vary similarly, and hence are comparably sensitive.

  6. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  7. Semiconductor radiation detector

    DOEpatents

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  8. Radiation Hardness Assurance for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Day, John H. (Technical Monitor)

    2002-01-01

    The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section

  9. Neutron hardness of silicon-based semiconductor devices

    SciTech Connect

    Baratta, A.J.; Kenney, E.S.

    1988-01-01

    The effects of radiation on silicon-based semiconductor devices have been the subject of research for many years. In an effort to understand these effects, a series of experiments was conducted on gamma-hardened MOSFETs. Experiments concentrated on MOSFETs in rad-hard form and on off-the-shelf items. Because of the need to maintain bias voltages at set levels to enhance damage and because of concerns over possible rapid annealing, active testing during irradiation was performed. In general, MOSFETs are expected to perform well in fast neutron environments. With the advances in rad-hard technologies, exposures to several-megarad gamma rays can be tolerated. In nuclear systems, the normal concurrent neutron fluence can reach over 10{sup 16} n/cm{sup 2}. At these levels, current research indicates that the devices fail. Such failure is not altogether unexpected, although the degree of induced structural disorder in the semiconductor's crystalline makeup is still small. However, the damage done appears to carry the silicon back to a nearly intrinsic state. Knowing that each primary knock-on atom causes 10 to 6000 secondary atomic dislocations, the fluences of 10{sup 16}/cm{sup 2} are clearly at a level able to markedly change semiconductor dopant-induced behavior. Thus, one can conclude that for current devices, the gamma dose in a mixed neutron gamma field may no longer be limiting.

  10. Thermopile detector radiation hard readout

    NASA Astrophysics Data System (ADS)

    Gaalema, Stephen; Van Duyne, Stephen; Gates, James L.; Foote, Marc C.

    2010-08-01

    The NASA Jupiter Europa Orbiter (JEO) conceptual payload contains a thermal instrument with six different spectral bands ranging from 8μm to 100μm. The thermal instrument is based on multiple linear arrays of thermopile detectors that are intrinsically radiation hard; however, the thermopile CMOS readout needs to be hardened to tolerate the radiation sources of the JEO mission. Black Forest Engineering is developing a thermopile readout to tolerate the JEO mission radiation sources. The thermal instrument and ROIC process/design techniques are described to meet the JEO mission requirements.

  11. Radiation hard electronics for LHC

    NASA Astrophysics Data System (ADS)

    Raymond, M.; Millmore, M.; Hall, G.; Sachdeva, R.; French, M.; Nygård, E.; Yoshioka, K.

    1995-02-01

    A CMOS front end electronics chain is being developed by the RD20 collaboration for microstrip detector readout at LHC. It is based on a preamplifier and CR-RC filter, analogue pipeline and an analogue signal processor. Amplifiers and transistor test structures have been constructed and evaluated in detail using a Harris 1.2 μm radiation hardened CMOS process. Progress with larger scale elements, including 32 channel front end chips, is described. A radiation hard 128 channel chip, with a 40 MHz analogue multiplexer, is to be submitted for fabrication in July 1994 which will form the basis of the readout of the tracking system of the CMS experiment.

  12. Hard gap in epitaxial semiconductor-superconductor nanowires.

    PubMed

    Chang, W; Albrecht, S M; Jespersen, T S; Kuemmeth, F; Krogstrup, P; Nygård, J; Marcus, C M

    2015-03-01

    Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on the proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunnelling conductance below the superconducting gap, suggesting a continuum of subgap states--a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. The hard gap, together with favourable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

  13. Radiation Hardness Assurance (RHA) Guideline

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Radiation Hardness Assurance (RHA) consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the mission space environment. The subset of interests for NEPP and the REAG, are EEE parts. It is important to register that all of these undertakings are in a feedback loop and require constant iteration and updating throughout the mission life. More detail can be found in the reference materials on applicable test data for usage on parts.

  14. Development of radiation hard scintillators

    SciTech Connect

    Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G. ); Blackburn, R. )

    1992-05-01

    Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro.

  15. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  16. Automated radiation hard ASIC design tool

    NASA Technical Reports Server (NTRS)

    White, Mike; Bartholet, Bill; Baze, Mark

    1993-01-01

    A commercial based, foundry independent, compiler design tool (ChipCrafter) with custom radiation hardened library cells is described. A unique analysis approach allows low hardness risk for Application Specific IC's (ASIC's). Accomplishments, radiation test results, and applications are described.

  17. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  18. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  19. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    PubMed

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  20. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

    PubMed Central

    Boufouss, El Hafed; Francis, Laurent A.; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-01-01

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of −40–200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage VREF depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of VREF and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2. PMID:24351635

  1. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  2. Development of radiation hard scintillators

    SciTech Connect

    Markley, F.; Davidson, M.; Keller, J.; Foster, G.; Pla-Dalmau, A.; Harmon, J.; Biagtan, E.; Schueneman, G.; Senchishin, V.; Gustfason, H.; Rivard, M.

    1993-11-01

    The authors have demonstrated that the radiation stability of scintillators made from styrene polymer is very much improved by compounding with pentaphenyltrimethyltrisiloxane (DC 705 vacuum pump oil). The resulting scintillators are softer than desired, so they decided to make the scintillators directly from monomer where the base resin could be easily crosslinked to improve the mechanical properties. They can now demonstrate that scintillators made directly from the monomer, using both styrene and 4-methyl styrene, are also much more radiation resistant when modified with DC705 oil. In fact, they retain from 92% to 95% of their original light output after gamma irradiation to 10 Mrads in nitrogen with air annealing. When these scintillators made directly from monomer are compared with scintillators of the same composition made from polymer the latter have much higher light outputs. They commonly reach 83% while those made form monomer give only 50% to 60% relative to the reference, BC408. When oil modified scintillators using both p-terphenyl and tetraphenylbutadiene are compared with identical scintillators except that they use 3 hydroxy-flavone as the only luminophore the radiation stability is the same. However the 3HF system gives only 30% as much light as BC408 instead of 83% when both are measured with a green extended Phillips XP2081B phototube.

  3. Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Buchner, Stephen

    2007-01-01

    This presentation discusses radiation hardness assurance (RHA) for space systems, providing both the programmatic aspects of RHA and the RHA procedure. RHA consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the space radiation environment. RHA also pertains to environment definition, part selection, part testing, spacecraft layout, radiation tolerant design, and mission/system/subsystems requirements. RHA procedure consists of establishing mission requirements, defining and evaluating the radiation hazard, selecting and categorizing the appropriate parts, and evaluating circuit response to hazard. The RHA approach is based on risk management and is confined only to parts, it includes spacecraft layout, system/subsystem/circuit design, and system requirements and system operations. RHA should be taken into account in the early phases of a program including the proposal and feasibility analysis phases.

  4. Design-Dependent Variability of Pulse Hardness of Types of Discrete Semiconductor Devices (Intervendor Variations).

    DTIC Science & Technology

    1982-12-01

    7 D-125 776 DESIGN-DEPENDENT VARIABILITY OF PULSE HARDNESS OF TYPES 1/1 OF DISCRETE SEMICONDUCTOR DEVICES (INTERVENDOR YARIATIONS)(U) HARRY DIAMOND...TYPE OF REPORT & PERIOD COVERED Design-Dependent Variability of Pulse Hardness of Technical Report Types of Discrete Semiconductor Devices (Intervendor...Identify by block number) Transistor design variations Nuclear survivability EMP analysis Pulse damage to transistors 2N1613 2N4237 JAN2N 1613 JAN2N2222

  5. A semiconductor radiation imaging pixel detector for space radiation dosimetry.

    PubMed

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

  6. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  7. Fault-Tolerant, Radiation-Hard DSP

    NASA Technical Reports Server (NTRS)

    Czajkowski, David

    2011-01-01

    Commercial digital signal processors (DSPs) for use in high-speed satellite computers are challenged by the damaging effects of space radiation, mainly single event upsets (SEUs) and single event functional interrupts (SEFIs). Innovations have been developed for mitigating the effects of SEUs and SEFIs, enabling the use of very-highspeed commercial DSPs with improved SEU tolerances. Time-triple modular redundancy (TTMR) is a method of applying traditional triple modular redundancy on a single processor, exploiting the VLIW (very long instruction word) class of parallel processors. TTMR improves SEU rates substantially. SEFIs are solved by a SEFI-hardened core circuit, external to the microprocessor. It monitors the health of the processor, and if a SEFI occurs, forces the processor to return to performance through a series of escalating events. TTMR and hardened-core solutions were developed for both DSPs and reconfigurable field-programmable gate arrays (FPGAs). This includes advancement of TTMR algorithms for DSPs and reconfigurable FPGAs, plus a rad-hard, hardened-core integrated circuit that services both the DSP and FPGA. Additionally, a combined DSP and FPGA board architecture was fully developed into a rad-hard engineering product. This technology enables use of commercial off-the-shelf (COTS) DSPs in computers for satellite and other space applications, allowing rapid deployment at a much lower cost. Traditional rad-hard space computers are very expensive and typically have long lead times. These computers are either based on traditional rad-hard processors, which have extremely low computational performance, or triple modular redundant (TMR) FPGA arrays, which suffer from power and complexity issues. Even more frustrating is that the TMR arrays of FPGAs require a fixed, external rad-hard voting element, thereby causing them to lose much of their reconfiguration capability and in some cases significant speed reduction. The benefits of COTS high

  8. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  9. Development of a radiation-hard photomultiplier tube

    NASA Technical Reports Server (NTRS)

    Birnbaum, M. M.; Bunker, R. L.; Roderick, J.; Stephenson, K.

    1984-01-01

    In a radiation-hard photomultiplier tube (PMT) such as has been developed for stabilization of the Galileo spacecraft as it goes through the Jovian high energy radiation belts, the primary effects of high energy electron and proton radiation that must be resisted are the production of fluorescence and Cerenkov emission. The present PMT envelope is ceramic rather than glass, and employs a special, electron-focusing design which will collect, accelerate and amplify electrons only from desired photocathode areas. Tests in a Co-60 radiation facility have shown that the radiation-hard PMT produces less than 2.5 percent of the radiation noise of a standard PMT.

  10. Test bench development for the radiation Hard GBTX ASIC

    NASA Astrophysics Data System (ADS)

    Leitao, P.; Feger, S.; Porret, D.; Baron, S.; Wyllie, K.; Barros Marin, M.; Figueiredo, D.; Francisco, R.; Da Silva, J. C.; Grassi, T.; Moreira, P.

    2015-01-01

    This paper presents the development of the GBTX radiation hard ASIC test bench. Developed for the LHC accelerator upgrade programs, the GBTX implements a bidirectional 4.8 Gb/s link between the radiation hard on-detector custom electronics and the off-detector systems. The test bench was used for functional testing of the GBTX and to evaluate its performance in a radiation environment, by conducting Total Ionizing Dose and Single-Event Upsets tests campaigns.

  11. Statistical Modeling for Radiation Hardness Assurance: Toward Bigger Data

    NASA Technical Reports Server (NTRS)

    Ladbury, R.; Campola, M. J.

    2015-01-01

    New approaches to statistical modeling in radiation hardness assurance are discussed. These approaches yield quantitative bounds on flight-part radiation performance even in the absence of conventional data sources. This allows the analyst to bound radiation risk at all stages and for all decisions in the RHA process. It also allows optimization of RHA procedures for the project's risk tolerance.

  12. Silicon carbide semiconductor technology for high temperature and radiation environments

    NASA Technical Reports Server (NTRS)

    Matus, Lawrence G.

    1993-01-01

    Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

  13. Simulation of neutron radiation damage in silicon semiconductor devices.

    SciTech Connect

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  14. Radiative recombination of hot carriers in narrow-gap semiconductors

    SciTech Connect

    Pavlov, N. V.; Zegrya, G. G.

    2012-01-15

    The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and concentrations of hot carriers are determined. The radiative recombination rate of hot carriers and the radiation gain coefficient are calculated in terms of the Kane model. It is demonstrated that the radiative recombination of hot carriers will make a substantial contribution to the total radiative recombination rate at high carrier concentrations.

  15. Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

    NASA Technical Reports Server (NTRS)

    Pugel, Diane

    2011-01-01

    This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

  16. Terahertz radiation from magnetic excitations in diluted magnetic semiconductors.

    PubMed

    Rungsawang, R; Perez, F; Oustinov, D; Gómez, J; Kolkovsky, V; Karczewski, G; Wojtowicz, T; Madéo, J; Jukam, N; Dhillon, S; Tignon, J

    2013-04-26

    We probed, in the time domain, the THz electromagnetic radiation originating from spins in CdMnTe diluted magnetic semiconductor quantum wells containing high-mobility electron gas. Taking advantage of the efficient Raman generation process, the spin precession was induced by low power near-infrared pulses. We provide a full theoretical first-principles description of spin-wave generation, spin precession, and of emission of THz radiation. Our results open new perspectives for improved control of the direct coupling between spin and an electromagnetic field, e.g., by using semiconductor technology to insert the THz sources in cavities or pillars.

  17. Resonance hard radiation in a gas-loaded FEL

    SciTech Connect

    Gevorgian, L.A.

    1995-12-31

    The process of induced radiation under the condition when the relativistic beam oscillation frequency coincides with the plasma frequency of the FEL filling gas, is investigated. Such a resonance results in a giant enhancement of interaction between electrons and photons providing high gain in the hard FEL frequency region. Meanwhile the spectralwidth of the spontaneous radiation is broadened significantly. A method is proposed for maintaining the synchronism between the electron oscillation frequency and the medium plasma frequency, enabling to transform the electron energy into hard radiation with high efficiency.

  18. Radiation Hard 0.13 Micron CMOS Library at IHP

    NASA Astrophysics Data System (ADS)

    Jagdhold, U.

    2013-08-01

    To support space applications we have developed an 0.13 micron CMOS library which should be radiation hard up to 200 krad. The article describes the concept to come to a radiation hard digital circuit and was introduces in 2010 [1]. By introducing new radiation hard design rules we will minimize IC-level leakage and single event latch-up (SEL). To reduce single event upset (SEU) we add two p-MOS transistors to all flip flops. For reliability reasons we use double contacts in all library elements. The additional rules and the library elements are integrated in our Cadence mixed signal design kit, “Virtuoso” IC6.1 [2]. A test chip is produced with our in house 0.13 micron BiCMOS technology, see Ref. [3]. As next step we will doing radiation tests according the european space agency (ESA) specifications, see Ref. [4], [5].

  19. Improving the radiation hardness of graphene field effect transistors

    NASA Astrophysics Data System (ADS)

    Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; Wishart, James F.; Hao, Yufeng; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2016-10-01

    Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. Here, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. We believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.

  20. Improving the radiation hardness of graphene field effect transistors

    DOE PAGES

    Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; ...

    2016-10-11

    Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally,more » we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.« less

  1. Improving the radiation hardness of graphene field effect transistors

    SciTech Connect

    Alexandrou, Konstantinos; Masurkar, Amrita; Edrees, Hassan; Wishart, James F.; Hao, Yufeng; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

    2016-10-11

    Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.

  2. Initial Nuclear Radiation Hardness Validation Test

    DTIC Science & Technology

    2008-11-03

    Measurement Accuracy Photocurrent Photocurrent Probes ±5% Gamma Dose **CaF 2 (Mn) TLD ±10% Gamma Radiation Pulse PIN Diode Compton ...1.02 and cGy(tissue)/cGy(CaF2) = 1.13, respectively. Each radiation pulse will be measured using a PIN or Compton diode and digitized on a transient...photocurrents produce secondary effects that include: a. Error generation in logic and analog circuits. b. Secondary photocurrents. TOP 1-2-618 3

  3. Radiation Hardness Assurance (RHA) for Small Missions

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Varied mission life and complexity is growing for small spacecraft. Small missions benefit from detailed hazard definition and evaluation as done in the past. Requirements need to flow from the system down to the parts level and aid system level radiation tolerance. RHA is highlighted with increasing COTS usage.

  4. Temperature Insensitive and Radiation Hard Photonics

    DTIC Science & Technology

    2014-03-19

    caused by solar activity follows a cyclic pattern with spurts of activity resulting from sunspots and flares . This pattern has been well studied also...year. One must also consider the effects of periodic solar flares , which would increase the radiation dosage. Worst- case estimates for dosages on...which means that we can examine solar activity from 2003 GSAT-2 data to determine potential maxima. Examination of solar activity for that time period

  5. Radiation hardness of present optical fibres

    NASA Astrophysics Data System (ADS)

    Henschel, Henning

    1994-12-01

    Optical fibers find rapidly growing use also in the nuclear industry. The dependence of their radiation-induced loss on fiber type, wavelength, temperature, light power, dose rate, and radiation type (gamma rays, neutrons) is pointed out and test results of modern (1989 - 1993) single mode (SM), graded index (GI), multimode stepindex (MM SI), and polymer optical fibers (POF) are presented. Continuous 60Co gamma irradiation of the SM fibers with a dose rate of about 1.5 Gy/s up to a final dose of 106 Gy led to radiation-induced losses of only 0.85 to 1.3 dB/10 m at 1300 nm wavelength and temperatures around 30 degree(s)C, whereas the GI fibers had losses of 1.3 to 2 dB/10 m under the same conditions. The lowest radiation-induced loss show MM SI fibers with pure SiO2 core of high OH-content: about 0.15 dB/10 m around 850 nm and about 0.1 dB/10 m around 1060 nm (106 Gy, equals 30 degree(s)C). POF with a core made of polymethyl methacrylate also have loss increases of

  6. Electromagnetic radiation screening of semiconductor devices for long life applications

    NASA Technical Reports Server (NTRS)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  7. Radiative decay rates of impurity states in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-01

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  8. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  9. Curve Fitting Solar Cell Degradation Due to Hard Particle Radiation

    NASA Technical Reports Server (NTRS)

    Gaddy, Edward M.; Cikoski, Rebecca; Mekadenaumporn, Danchai

    2003-01-01

    This paper investigates the suitability of the equation for accurately defining solar cell parameter degradation as a function of hard particle radiation. The paper also provides methods for determining the constants in the equation and compares results from this equation to those obtained by the more traditionally used.

  10. Semiconductor Radiation Physics: From Defects to Devices

    DTIC Science & Technology

    2007-11-02

    electrical measurements and models related to total-dose damage, electrical reliability, and single-event dielectric rupture in gate dielectrics and field...Radiation Effects in Hf Silicate and Alumina Dielectrics Hafnium silicate capacitors with 4.5 nm equivalent oxide thickness gate insulators were...The border (near interfacial-oxide) trap density in the gate dielectric inferred from the noise measurements was significantly higher than that

  11. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

    NASA Astrophysics Data System (ADS)

    Kjaergaard, M.; Nichele, F.; Suominen, H. J.; Nowak, M. P.; Wimmer, M.; Akhmerov, A. R.; Folk, J. A.; Flensberg, K.; Shabani, J.; Palmstrøm, C. J.; Marcus, C. M.

    2016-09-01

    Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e2/h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

  12. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure.

    PubMed

    Kjaergaard, M; Nichele, F; Suominen, H J; Nowak, M P; Wimmer, M; Akhmerov, A R; Folk, J A; Flensberg, K; Shabani, J; Palmstrøm, C J; Marcus, C M

    2016-09-29

    Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e(2)/h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

  13. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  14. A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.

    PubMed

    Ovsyannikov, Sergey V; Karkin, Alexander E; Morozova, Natalia V; Shchennikov, Vladimir V; Bykova, Elena; Abakumov, Artem M; Tsirlin, Alexander A; Glazyrin, Konstantin V; Dubrovinsky, Leonid

    2014-12-23

    An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.

  15. Development of high temperature, high radiation resistant silicon semiconductors

    NASA Technical Reports Server (NTRS)

    Whorl, C. A.; Evans, A. W.

    1972-01-01

    The development of a hardened silicon power transistor for operation in severe nuclear radiation environments at high temperature was studied. Device hardness and diffusion techniques are discussed along with the geometries of hardened power transistor chips. Engineering drawings of 100 amp and 5 amp silicon devices are included.

  16. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  17. Development of a radiation-hard CMOS process

    NASA Technical Reports Server (NTRS)

    Power, W. L.

    1983-01-01

    It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

  18. Solar cell nanotechnology for improved efficiency and radiation hardness

    NASA Astrophysics Data System (ADS)

    Fedoseyev, Alexander I.; Turowski, Marek; Shao, Qinghui; Balandin, Alexander A.

    2006-08-01

    Space electronic equipment, and NASA future exploration missions in particular, require improvements in solar cell efficiency and radiation hardness. Novel nano-engineered materials and quantum-dot array based photovoltaic devices promise to deliver more efficient, lightweight solar cells and arrays which will be of high value to long term space missions. In this paper, we describe issues related to the development of the quantum-dot based solar cells and comprehensive software tools for simulation of the nanostructure-based photovoltaic cells. Some experimental results used for the model validation are also reviewed. The novel modeling and simulation tools for the quantum-dot-based nanostructures help to better understand and predict behavior of the nano-devices and novel materials in space environment, assess technologies, devices, and materials for new electronic systems as well as to better evaluate the performance and radiation response of the devices at an early design stage. The overall objective is to investigate and design new photovoltaic structures based on quantum dots (QDs) with improved efficiency and radiation hardness. The inherently radiation tolerant quantum dots of variable sizes maximize absorption of different light wavelengths, i.e., create a "multicolor" cell, which improves photovoltaic efficiency and diminishes the radiation-induced degradation. The QD models described here are being integrated into the advanced photonic-electronic device simulator NanoTCAD, which can be useful for the optimization of QD superlattices as well as for the development and exploring of new solar cell designs.

  19. Analysis of space radiation data of semiconductor memories

    NASA Technical Reports Server (NTRS)

    Stassinopoulos, E. G.; Brucker, G. J.; Stauffer, C. A.

    1996-01-01

    This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.

  20. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    SciTech Connect

    Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  1. Radiation hardness of three-dimensional polycrystalline diamond detectors

    SciTech Connect

    Lagomarsino, Stefano Sciortino, Silvio; Bellini, Marco; Corsi, Chiara; Cindro, Vladimir; Kanxheri, Keida; Servoli, Leonello; Morozzi, Arianna; Passeri, Daniele; Schmidt, Christian J.

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  2. Radiation-hard electrical coil and method for its fabrication

    DOEpatents

    Grieggs, R.J.; Blake, R.D.; Gac, F.D.

    1982-06-29

    A radiation-hard insulated electrical coil and method for making the same are disclosed. In accordance with the method, a conductor, preferably copper, is wrapped with an aluminum strip and then tightly wound into a coil. The aluminum-wrapped coil is then annealed to relax the conductor in the coiled configuration. The annealed coil is then immersed in an alkaline solution to dissolve the aluminum strip, leaving the bare conductor in a coiled configuration with all of the windings closely packed yet uniformly spaced from one another. The coil is then insulated with a refractory insulating material. In the preferred embodiment, the coil is insulated by coating it with a vitreous enamel and subsequently potting the enamelled coil in a castable ceramic concrete. The resulting coil is substantially insensitive to radiation and may be operated continuously in high radiation environments for long periods of time.

  3. Radiation Hardness Assurance (RHA): Challenges and New Considerations

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2017-01-01

    Radiation Hardness Assurance (RHA) challenges associated with the use of commercial-off-the-shelf (COTS) components and emerging technologies are cause for risk acceptance in space flight missions. The RHA flow includes environment definition, hazard evaluation, requirements definition, evaluation of design, and design trades to accommodate the risk a project or program takes. The varied missions profiles and environments don't necessarily benefit from the same risk reduction efforts or cost reduction attempts. The level of effort within the RHA flow can be tailored to minimize risk based on the environment or design criticality.

  4. Radiation-hard/high-speed parallel optical links

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Buchholz, P.; Heidbrink, S.; Kagan, H. P.; Kass, R. D.; Moore, J.; Smith, D. S.; Vogt, M.; Ziolkowski, M.

    2016-09-01

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  5. Absorption of infrared radiation by human dental hard substances

    NASA Astrophysics Data System (ADS)

    Roth, Klaus K.; Duczynski, Edwin W.; von der Heide, Hans-Joachim; Struve, Bert

    1993-12-01

    Absorption spectra of enamel, dentin, synthetic hydroxyapatite and deionized water were taken in the wavelength band 500 to 3000 nm. It could be shown that infrared radiation is mainly absorbed in the aqueous components of dental hard tissues. Because of their decreased water content extinctions measured are slightly lower than those of deionized water. Furthermore, mineral absorptions could be detected in the range of 2760 to 2840 nm with a maximum at 2800 nm in enamel and a smaller one at 2500 nm in dentin.

  6. The electromagnetic radiation from semiconductor minerals in orebody

    NASA Astrophysics Data System (ADS)

    Ozawa, M.; Nagahama, H.; Muto, J.; Nagase, T.

    2013-12-01

    In complex ore deposits composing semiconductor minerals, electromagnetic radiation in the radio frequency (30 kHz ~ 3 MHz) is induced by propagation of elastic waves [1]. Semiconductor minerals are divided into n- or p-type. When each p-type and n-type is joined, the resulting junction (p-n junction) has the rectifying property. Many natural orebodies show this property, but it has not been evaluated qualitatively. A lot of p-n junctions exist as which connect in parallel and in series in the orebody [2]. They can be regarded as a single p-n junction at large scale. Hence elucidating the electric property of micro p-n junction is required to understand the semiconductor properties of orebody. To discuss the electromagnetic emission from semiconductor minerals in the orebody associated with tectonic process, we measure the electric property of the semiconductor pyrite. Composition and electric properties of natural semiconductor minerals are heterogeneous due to the presence of impurities and defects. Therefore, it is needed to clarify the properties at each microscopic region. In this research, we apply electroetching method and SEM analysis to acquire composition characteristics and use an indentation probe to reveal microscopic electric properties. Sample of pyrite is from Waga-Sennin mine, Akita prefecture, Japan. The area of cross section is 1.4 cm2 with thickness of 0.38 mm2. In the electrolytic etching, the surface of samples showed etching figures and zonal structures with widths of about 10 -100 μm. According to the SEM analysis, Pb inclusions were observed to be precipitated parallel to crystallographic planes. The heterogeneous change in electric properties of each area was observed to be as etching figure. Thermal probing method clarified that the regions of n-p type differences were also coincidence well to etching figure patterns. P-type regions showed a higher solubility than n-type regions. At p-n junction regions, rectifying property was observed

  7. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  8. Radiation-hard/high-speed array-based optical engine

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Buchholz, P.; Heidbrink, S.; Kagan, H. P.; Kass, R. D.; Moore, J.; Smith, D. S.; Vogt, M.; Ziolkowski, M.

    2016-12-01

    We have designed and fabricated a compact array-based optical engine for transmitting data at 10 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The DAC settings are stored in SEU (single event upset) tolerant registers. Several devices were irradiated with 24 GeV/c protons and the performance of the devices is satisfactory after the irradiation.

  9. Radiation hardness of the storage phosphor europium doped potassium chloride for radiation therapy dosimetry

    SciTech Connect

    Driewer, Joseph P.; Chen, Haijian; Osvet, Andres; Low, Daniel A.; Li, H. Harold

    2011-08-15

    Purpose: An important property of a reusable dosimeter is its radiation hardness, that is, its ability to retain its dosimetric merits after irradiation. The radiation hardness of europium doped potassium chloride (KCl:Eu{sup 2+}), a storage phosphor material recently proposed for radiation therapy dosimetry, is examined in this study. Methods: Pellet-style KCl:Eu{sup 2+} dosimeters, 6 mm in diameter, and 1 mm thick, were fabricated in-house for this study. The pellets were exposed by a 6 MV photon beam or in a high dose rate {sup 137}Cs irradiator. Macroscopic properties, such as radiation sensitivity, dose response linearity, and signal stability, were studied with a laboratory photostimulated luminescence (PSL) readout system. Since phosphor performance is related to the state of the storage centers and the activator, Eu{sup 2+}, in the host lattice, spectroscopic and temporal measurements were carried out in order to explore radiation-induced changes at the microscopic level. Results: KCl:Eu{sup 2+} dosimeters retained approximately 90% of their initial signal strength after a 5000 Gy dose history. Dose response was initially supralinear over the dose range of 100-700 cGy but became linear after 60 Gy. Linearity did not change significantly in the 0-5000 Gy dose history spanned in this study. Annealing high dose history chips resulted in a return of supralinearity and a recovery of sensitivity. There were no significant changes in the PSL stimulation spectra, PSL emission spectra, photoluminescence spectra, or luminescence lifetime, indicating that the PSL signal process remains intact after irradiation but at a reduced efficiency due to reparable radiation-induced perturbations in the crystal lattice. Conclusions: Systematic studies of KCl:Eu{sup 2+} material are important for understanding how the material can be optimized for radiation therapy dosimetry purposes. The data presented here indicate that KCl:Eu{sup 2+} exhibits strong radiation hardness and

  10. Notional Radiation Hardness Assurance (RHA) Planning For NASA Missions: Updated Guidance

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Pellish, Jonathan A.

    2014-01-01

    Radiation Hardness Assurance (RHA) is the process of ensuring space system performance in the presence of a space radiation environment. Herein, we present an updated NASA methodology for RHA focusing on content, deliverables and timeframes.

  11. National Radiation Hardness Assurance (RHA) Planning For NASA Missions: Updated Guidance

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Pellish, Jonathan Allen

    2014-01-01

    Radiation Hardness Assurance (RHA) is the process of ensuring space system performance in the presence of a space radiation environment. Herein, we present an updated NASA methodology for RHA focusing on content, deliverables and timeframes.

  12. Total-dose radiation effects data for semiconductor devices (1989 supplement)

    NASA Technical Reports Server (NTRS)

    Martin, Keith E.; Coss, James R.; Goben, Charles A.; Shaw, David C.; Farmanesh, Sam; Davarpanah, Michael M.; Craft, Leroy H.; Price, William E.

    1990-01-01

    Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

  13. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  14. Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

    SciTech Connect

    Kukushkin, V. A.

    2015-01-15

    The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime.

  15. Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

    NASA Technical Reports Server (NTRS)

    Katzman, Vladimir

    2012-01-01

    A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The

  16. Fault tolerant, radiation hard, high performance digital signal processor

    NASA Technical Reports Server (NTRS)

    Holmann, Edgar; Linscott, Ivan R.; Maurer, Michael J.; Tyler, G. L.; Libby, Vibeke

    1990-01-01

    An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

  17. Development of high temperature, radiation hard detectors based on diamond

    NASA Astrophysics Data System (ADS)

    Metcalfe, Alex; Fern, George R.; Hobson, Peter R.; Ireland, Terry; Salimian, Ali; Silver, Jack; Smith, David R.; Lefeuvre, Gwenaelle; Saenger, Richard

    2017-02-01

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the 12C(n,α)9Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response.

  18. Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication

    SciTech Connect

    Lewin, A.A.; Serago, C.F.; Schwade, J.G.; Abitbol, A.A.; Margolis, S.C.

    1984-10-01

    New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.

  19. Effect of gamma radiation on micromechanical hardness of lead-free solder joint

    SciTech Connect

    Paulus, Wilfred; Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu; Yusoff, Wan Yusmawati Wan

    2015-09-25

    Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

  20. The comparison of radiation hardness of heterojunction SiGe and conventional silicon bipolar transistors

    NASA Astrophysics Data System (ADS)

    Bakerenkov, A. S.; Felitsyn, V. A.; Rodin, A. S.

    2016-10-01

    The results of the X-ray radiation impact on heterojunction SiGe and conventional silicon bipolar transistors are presented. Oxide thickness over the emitter-base junction depletion region determines the radiation hardness of the bipolar transistors. In this article, the estimation of the rate of radiation degradation of electrical parameters for conventional silicon devices and SiGe-transistors is performed.

  1. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  2. Effects of He radiation on cavity distribution and hardness of bulk nanolayered Cu-Nb composites

    NASA Astrophysics Data System (ADS)

    Yang, L. X.; Zheng, S. J.; Zhou, Y. T.; Zhang, J.; Wang, Y. Q.; Jiang, C. B.; Mara, N. A.; Beyerlein, I. J.; Ma, X. L.

    2017-04-01

    Interface engineering is an important strategy for developing radiation tolerant materials. In prior work, bulk nanolayered composites fabricated by accumulative roll bonding (ARB) showed outstanding radiation resistance. However, the effects of layer thickness and radiation conditions on damage distributions and their effect on hardness have not been explored. Here, we use transmission electron microscopy (TEM) and nanoindentation to investigate the effects of radiation on the distribution of radiation-induced cavities and post-radiation hardness in ARB nanolayered Cu-Nb composites. We show that whether the cavities cross the interface depends on layer thickness and temperature, and that, remarkably, radiation could generate softening, not always hardening. We posit that the softening mainly results from the recovery of dislocations stored in the crystal after the bulk forming ARB processing due to He radiation and this phenomenon offsets radiation-induced hardening as layers become finer and temperatures rise.

  3. Influence of design variables on radiation hardness of silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

    1985-01-01

    Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

  4. Comparison of the radiation hardness of various VLSI technologies for defense applications

    SciTech Connect

    Gibbon, C.F.

    1985-01-01

    In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.

  5. Effect Of Clock Mode On Radiation Hardness Of An ADC

    NASA Technical Reports Server (NTRS)

    Lee, Choon I.; Rax, Bernie G.; Johnston, Allan H.

    1995-01-01

    Report discusses techniques for testing and evaluating effects of total dosages of ionizing radiation on performances of high-resolution successive-approximation analog-to-digital converters (ADCs), without having to test each individual bit or transition. Reduces cost of testing by reducing tests to few critical parametric measurements, from which one determines approximate radiation failure levels providing good approximations of responses of converters for purpose of total-dose-radiation evaluations.

  6. The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

    NASA Astrophysics Data System (ADS)

    Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

    2016-09-01

    The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

  7. Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

    SciTech Connect

    Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

    2006-08-15

    We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering.

  8. Radiation hardness improvement of analog front-end microelectronic devices for particle accelerator

    NASA Astrophysics Data System (ADS)

    Miroshnichenko, A. G.; Rodin, A. S.; Bakerenkov, A. S.; Felitsyn, V. A.

    2016-10-01

    Series of schematic techniques for increasing radiation hardness of the current mirrors is developed. These techniques can be used for the design of analog front-end microelectronic devices based on the operational amplifiers. The circuit simulation of radiation degradation of current transmission coefficients was performed for various circuit solutions in LTSpice software.

  9. Design and development of a hard tube flexible radiator system

    NASA Technical Reports Server (NTRS)

    Hixon, C. W.

    1980-01-01

    The construction and operational characteristics of an extended life flexible radiator panel is described. The radiator panel consists of a flexible fin laminate and stainless steel flow tubes designed for a 90 percent probability of surviving 5 years in an Earth orbit micrometeoroid environment. The radiator panel rejects 1.1 kW sub t of heat into an environmental sink temperature of 0 F. Total area is 170 square feet and the panel extends 25 feet in the fully deployed position. When retracted the panel rolls onto a 11.5 inch diameter by 52 inch long storage drum, for a final stored diameter of 22 inches.

  10. Radiation hardness by design for mixed signal infrared readout circuit applications

    NASA Astrophysics Data System (ADS)

    Gaalema, Stephen; Gates, James; Dobyns, David; Pauls, Greg; Wall, Bruce

    2013-09-01

    Readout integrated circuits (ROICs) to support space-based infrared detection applications often have severe radiation tolerance requirements. Radiation hardness-by-design (RHBD) significantly enhances the radiation tolerance of commercially available CMOS and custom radiation hardened fabrication techniques are not required. The combination of application specific design techniques, enclosed gate architecture nFETs and intrinsic thin oxide radiation hardness of 180 nm process node commercial CMOS allows realization of high performance mixed signal circuits. Black Forest Engineering has used RHBD techniques to develop ROICs with integrated A/D conversion that operate over a wide range of temperatures (40K-300K) to support infrared detection. ROIC radiation tolerance capability for 256x256 LWIR area arrays and 1x128 thermopile linear arrays is presented. The use of 130 nm CMOS for future ROIC RHBD applications is discussed.

  11. Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1985-01-01

    Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

  12. Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductors

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1983-01-01

    When a semiconductor sample is irradiated by means of an external source, emitting photons or electrons, excess carriers are produced which distribute themselves throughout the sample. One of the parameters which determine the distribution of the carriers is the surface recombination velocity. The present investigation is concerned with the recombination lifetime tau. The predominant mechanism for recombination in wide band-gap semiconductors is described by the Shockley-Read-Hall (SRH) theory. The transport equations are derived for free carriers and the radiation field. The considered theory is applied to a semiinfinite, one-dimensional semiconductor slab irradiated by light of a given frequency. Some numerical considerations based on n-type GaAs are presented. Attention is given to a determination of the radiation transmitted through the surface of the sample.

  13. Radiation detection system using semiconductor detector with differential carrier trapping and mobility

    DOEpatents

    Whited, Richard C.

    1981-01-01

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  14. The effects of heavy particle radiation on semiconductor devices

    SciTech Connect

    Gover, J.E.

    1989-01-01

    Heavy particle radiation can produce upsets in digital circuits as well as trigger burn out or breakdown in power MOSFETs and MNOS nonvolatile memories. Latch-up may also be stimulated by heavy ions. This report covers work done on the effects of heavy particle radiation on PN junctions, CMOS inverters, CMOS latch, MOSFET and non-volatile memories. 15 refs., 3 figs.

  15. The effects of heavy particle radiation on semiconductor devices

    NASA Astrophysics Data System (ADS)

    Gover, James E.

    Heavy particle radiation can produce upsets in digital circuits as well as trigger burn out or breakdown in power MOSFETs and MNOS nonvolatile memories. Latch-up may also be stimulated by heavy ions. Work done on the effects of heavy particle radiation on PN junctions, CMOS inverters, CMOS latch, MOSFET and non-volatile memories is covered.

  16. Radiation hardness of Efratom M-100 rubidium frequency standard

    SciTech Connect

    English, T.C.; Vorwerk, H.; Rudie, N.J.

    1983-02-01

    The effects of nuclear radiation on rubidium gas cell frequency standards and components are presented, including the results of recent tests where a continuously operating rubidium frequency standard (Effratom, Model M-100) was subjected to simultaneous neutron/gamma radiation. At the highest neutron fluence 7.5 10 to the 12th power n/sq cm and total dose 11 krad(Si) tested, the unit operated satisfactorily. The total frequency change over the 2 1/2 hour test period due to all causes, including repeated retraction from and insertion into the reactor, was less than 1 x 10 to the -10th power. The effects of combined neutron/gamma radiation on rubidium frequency standard physics package components were also studied, and the results are presented.

  17. Radiation hardness of Efratom M-100 rubidium frequency standard

    NASA Technical Reports Server (NTRS)

    English, T. C.; Vorwerk, H.; Rudie, N. J.

    1983-01-01

    The effects of nuclear radiation on rubidium gas cell frequency standards and components are presented, including the results of recent tests where a continuously operating rubidium frequency standard (Effratom, Model M-100) was subjected to simultaneous neutron/gamma radiation. At the highest neutron fluence 7.5 10 to the 12th power n/sq cm and total dose 11 krad(Si) tested, the unit operated satisfactorily; the total frequency change over the 2 1/2 hour test period due to all causes, including repeated retraction from and insertion into the reactor, was less than 1 x 10 to the -10th power. The effects of combined neutron/gamma radiation on rubidium frequency standard physics package components were also studied, and the results are presented.

  18. Test of radiation hardness of CMOS transistors under neutron irradiation

    SciTech Connect

    Sadrozinski, H.F.W.; Rowe, W.A.; Seiden, A.; Spencer, E.; Hoffman, C.M.; Holtkamp, D.; Kinnison, W.W.; Sommer, W.F. Jr.; Ziock, H.J.

    1989-01-01

    We have tested 2 micron CMOS test structures from various foundries in the LAMPF Beam stop for radiation damage under prolongued neutron irradiation. The fluxes employed covered the region expected to be encountered at the SSC and led to fluences of up to 10/sup 14/ neutrons/cm/sup 2/ in about 500 hrs of running. We show that test structures which have been measured to survive ionizing radiation of the order MRad also survive these high neutron fluences. 5 refs., 4 figs.

  19. High performance compound semiconductor SPAD arrays

    NASA Astrophysics Data System (ADS)

    Harmon, Eric S.; Naydenkov, Mikhail; Bowling, Jared

    2016-05-01

    Aggregated compound semiconductor single photon avalanche diode (SPAD) arrays are emerging as a viable alternative to the silicon photomultiplier (SiPM). Compound semiconductors have the potential to surpass SiPM performance, potentially achieving orders of magnitude lower dark count rates and improved radiation hardness. New planar processing techniques have been developed to enable compound semiconductor SPAD devices to be produced with pixel pitches of 11 - 25 microns, with thousands of SPADs per array.

  20. Influence of Li-codoping on the radiation hardness of CsBr:Eu{sup 2+}

    SciTech Connect

    Zimmermann, J.; Hesse, S.; Seggern, H. von; Fuchs, M.; Knuepfer, W.

    2007-06-01

    The poor radiation hardness of the otherwise excellent x-ray storage phosphor CsBr:Eu{sup 2+} constitutes a problem for its commercial application in medical diagnostics. X-ray induced vacancy centers such as M-centers enhance the diffusion of Eu{sup 2+} activators resulting in a formation of photostimulated luminescence (PSL) inactive europium clusters or second phases of europium compounds. The present study investigates the influence of Li-codoping on the radiation hardness of CsBr:Eu{sup 2+}. It is reported that the integration of Li{sup +} into the CsBr:Eu{sup 2+} suppresses the generation of M-centers during x-irradiation and thereby partially improves the radiation hardness.

  1. Full-band structure modeling of the radiative and non-radiative properties of semiconductor materials and devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Bellotti, Enrico; Wen, Hanqing; Pinkie, Benjamin; Matsubara, Masahiko; Bertazzi, Francesco

    2015-08-01

    Understanding the radiative and non-radiative properties of semiconductor materials is a prerequisite for optimizing the performance of existing light emitters and detectors and for developing new device architectures based on novel materials. Due to the ever increasing complexity of novel semiconductor systems and their relative technological immaturity, it is essential to have design tools and simulation strategies that include the details of the microscopic physics and their dependence on the macroscopic (continuum) variables in the macroscopic device models. Towards this end, we have developed a robust full-band structure based approach that can be used to study the intrinsic material radiative and non-radiative properties and evaluate the same characteristics of low-dimensional device structures. A parallel effort is being carried out to model the effect of substrate driven stress/strain and material quality (dislocations and defects) on microscopic quantities such as non-radiative recombination rate. Using this modeling approach, we have extensively studied the radiative and non-radiative properties of both elemental (Si and Ge) and compound semiconductors (HgCdTe, InGaAs, InAsSb and InGaN). In this work we outline the details of the modelling approach, specifically the challenges and advantages related to the use of the full-band description of the material electronic structure. We will present a detailed comparison of the radiative and Auger recombination rates as a function of temperature and doping for HgCdTe and InAsSb that are two important materials for infrared detectors and emitters. Furthermore we will discuss the role of non-radiatiave Auger recombination processes in explaining the performance of light emitter diodes. Finally we will present the extension of the model to low dimensional structures employed in a number of light emitter and detector structures.

  2. MNOS/SOS radiation hardness performance and reliability study

    NASA Astrophysics Data System (ADS)

    Hampton, F. L.; Cricchi, J. R.

    1982-05-01

    In this investigation the endurance-retention characteristics of fast-write MNOS memory structure, and radiation tolerance of metal-gate dual-dielectric and polysilicon-gate all-oxide devices have been evaluated. Writing and clearing speed have been studied with respect to the NH3:SiH4 ratio (APCVD), and NH3:SiC12H2 ratio (LPCVD). The films deposited with a low NH3:SiC12 ratios could be written and cleared with shorter pulse widths; however, a degradation in retention was observed. An improvement in the endurance retention product of a drain source protected transistor structure has been realized by oxidizing the memory nitride followed by an H2 anneal immediately after deposition. The film was deposited with a LPCVD reactor at 750 deg with a NH3:SiC12H2 ratio of 9:1. Oxidation was performed in steam at 900 C, as was the subsequent H2 anneal. The effect of total dose radiation was found to be more severe for a positive bias. The all oxide polysilicon gate transistor structures were observed to be relatively soft, however results from capacitor structures shows promise in developing a radiation tolerant polysilicon-gate all-oxide gate structure.

  3. FPIX2: A radiation-hard pixel readout chip for BTeV

    SciTech Connect

    David C. Christian et al.

    2000-12-11

    A radiation-hard pixel readout chip, FPIX2, is being developed at Fermilab for the recently approved BTeV experiment. Although designed for BTeV, this chip should also be appropriate for use by CDF and DZero. A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned. The results of initial tests of prototype 0.25{micro} CMOS devices are presented, as are plans for the balance of the development effort.

  4. Study of radiation hardness of pure CsI crystals for Belle-II calorimeter

    NASA Astrophysics Data System (ADS)

    Boyarintsev, A.; Boyarintseva, Y.; Gektin, A.; Shiran, N.; Shlyakhturov, V.; Taranyuk, V.; Timoshenko, N.; Bobrov, A.; Garmash, A.; Golkovski, M.; Kuzmin, A.; Matvienko, D.; Savrovski, P.; Shebalin, V.; Shwartz, B.; Vinokurova, A.; Vorobyev, V.; Zhilich, V.; Krumshtein, Z. V.; Nozdrin, A. A.; Olshevsky, A. G.

    2016-03-01

    A study of the radiation hardness of pure CsI crystals 30 cm long was performed with a uniformly absorbed dose of up to 14.3 krad. This study was initiated by the proposed upgrade of the end cap calorimeter of the Belle-II detector, using pure CsI crystals. A set of 14 crystals of truncated pyramid shape used in this study was produced at the Institute for Scintillation Materials NAS from 14 different ingots grown with variations of the growing technology. Interrelationship of crystal scintillation characteristics, radiation hardness and the growing technology was observed.

  5. Axial ion-electron emission microscopy of IC radiation hardness

    NASA Astrophysics Data System (ADS)

    Doyle, B. L.; Vizkelethy, G.; Walsh, D. S.; Swenson, D.

    2002-05-01

    A new system for performing radiation effects microscopy (REM) has been developed at Sandia National Laboratory in Albuquerque. This system combines two entirely new concepts in accelerator physics and nuclear microscopy. A radio frequency quadrupole (RFQ) linac is used to boost the energy of ions accelerated by a conventional Tandem Van de Graaff-Pelletron to velocities of 1.9 MeV/amu. The electronic stopping power for heavy ions is near a maximum at this velocity, and their range is ˜20 μm in Si. These ions therefore represent the most ionizing form of radiation in nature, and are nearly ideal for performing single event effects testing of integrated circuits. Unfortunately, the energy definition of the RFQ-boosted ions is rather poor (˜ a few %), which makes problematic the focussing of such ions to the submicron spots required for REM. To circumvent this problem, we have invented ion electron emission microscopy (IEEM). One can perform REM with the IEEM system without focussing or scanning the ion beam. This is because the position on the sample where each ion strikes is determined by projecting ion-induced secondary electrons at high magnification onto a single electron position sensitive detector. This position signal is then correlated with each REM event. The IEEM system is now mounted along the beam line in an axial geometry so that the ions pass right through the electron detector (which is annular), and all of the electrostatic lenses used for projection. The beam then strikes the sample at normal incidence which results in maximum ion penetration and removes a parallax problem experienced in an earlier system. Details of both the RFQ-booster and the new axial IEEM system are given together with some of the initial results of performing REM on Sandia-manufactured radiation hardened integrated circuits.

  6. Radiation hardness of n-GaN schottky diodes

    SciTech Connect

    Lebedev, A. A. Belov, S. V.; Mynbaeva, M. G.; Strel’chuk, A. M.; Bogdanova, E. V.; Makarov, Yu. N.; Usikov, A. S.; Kurin, S. Yu.; Barash, I. S.; Roenkov, A. D.; Kozlovski, V. V.

    2015-10-15

    Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

  7. A source of hard X-ray radiation based on hybrid X pinches

    NASA Astrophysics Data System (ADS)

    Shelkovenko, T. A.; Pikuz, S. A.; Hoyt, C. L.; Cahill, A. D.; Atoyan, L.; Hammer, D. A.; Tilikin, I. N.; Mingaleev, A. R.; Romanova, V. M.; Agafonov, A. V.

    2016-10-01

    X pinches are well known to produce very small, dense plasma pinches ("hot spots") that emit sub-nanosecond bursts of 1-8 keV radiation. Hard X-ray radiation in the range from 8 to 300 keV or more is also emitted, and only a small portion of which is associated with the X-pinch hot spot. In hybrid X-pinches (HXP), the 10 ns hard X-ray pulse is terminated by fast closure of the gap between the two conical electrodes of the HXP by rapidly expanding electrode plasmas. The temporal, spectral, and spatial properties of this higher energy radiation have been studied. This radiation was used for point-projection imaging with magnification between 1.5 and 6, and spatial resolution of 20-100 μm was demonstrated.

  8. Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings

    NASA Astrophysics Data System (ADS)

    Spevak, I. S.; Kuzmenko, A. A.; Tymchenko, M.; Gavrikov, V. K.; Shulga, V. M.; Feng, J.; Sun, H. B.; Kamenev, Yu. E.; Kats, A. V.

    2016-08-01

    Resonance diffraction of THz hidrogen cyanide laser radiation on a semiconductor (InSb) grating is studied both experimentally and theoretically. The specular reflectivity suppression due to the resonance excitation of the THz surface plasmon-polariton is observed on a pure semiconductor grating and on semiconductor gratings covered with a thin dielectric layer. The dielectric coating of the grating results in the resonance shift and widening depending both on the layer thickness and dielectric properties. A simple analytical theory of the resonance diffraction on rather shallow gratings covered with a dielectric layer is presented, and the results are in a good accordance with the experimental data. Analytical expressions for the resonance shift and broadening are essential for the resonance properties understanding and useful for sensing data interpretation of the agents deposited on the grating surface.

  9. Radiation hardness of 3HF-tile/O2-WLS-fiber calorimeter

    SciTech Connect

    Han, S.W.; Hu, L.D.; Liu, N.Z.

    1993-11-01

    The radiation hardness of a 3HF-tile/O2-WLS-fiber calorimeter with two different tile/fiber patterns has been studied. Two calorimeter modules were irradiated up to 10 Mrad with the BEPC 1.3 GeV electron beam. The radiation damage of these modules is compared with our previous measurements from SCSN81-tile/BCF91A-WLS-fiber modules. The longitudinal damage profiles are fitted as a function of depth.

  10. Radiation hard programmable delay line for LHCb calorimeter upgrade

    NASA Astrophysics Data System (ADS)

    Mauricio, J.; Gascón, D.; Vilasís, X.; Picatoste, E.; Machefert, F.; Lefrancois, J.; Duarte, O.; Beigbeder, C.

    2014-01-01

    This paper describes the implementation of a SPI-programmable clock delay chip based on a Delay Locked Loop (DLL) in order to shift the phase of the LHC clock (25 ns) in steps of 1ns, with less than 5 ps jitter and 23 ps of DNL. The delay lines will be integrated into ICECAL, the LHCb calorimeter front-end analog signal processing ASIC in the near future. The stringent noise requirements on the ASIC imply minimizing the noise contribution of digital components. This is accomplished by implementing the DLL in differential mode. To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. This 5.7 mm2 chip has been implemented in CMOS 0.35 μm technology.

  11. Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

    NASA Technical Reports Server (NTRS)

    Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

    2015-01-01

    Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.

  12. Creation of a Radiation Hard 0.13 Micron CMOS Library at IHP

    NASA Astrophysics Data System (ADS)

    Jagdhold, U.

    2010-08-01

    To support space applications we will develop an 0.13 micron CMOS library which should be radiation hard up to 200 krad. By introducing new radiation hard design rules we will minimize IC-level leakage and single event latchup (SEL). To reduce single event upset (SEU) we will add two p-MOS transistors to all flip flops. For reliability reasons we will use double contacts in all library elements. The additional rules and the library elements will then be integrated in our Cadence mixed signal designkit, Virtuoso IC6.1 [1]. A test chip will be produced with our in house 0.13 micron BiCMOS technology, see Ref. [2].Thereafter we will doing radiation tests according the ESA specifications, see Ref. [3], [4].

  13. Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

    NASA Technical Reports Server (NTRS)

    Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

    1998-01-01

    The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

  14. Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

    SciTech Connect

    Prakash, A. P. Gnana; Pushpa, N.; Praveen, K. C.; Naik, P. S.; Revannasiddaiah, D.

    2012-06-05

    In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

  15. Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

  16. Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

    SciTech Connect

    Takahashi, Y.; Ohnishi, K.; Fujimaki, T.; Yoshikawa, M.

    1999-12-01

    The radiation-induced trapped charge in insulation layer of metal-nitride-oxide-semiconductor (MNOS) structure has been investigated. The mechanism of charge trapping under irradiation is studied by the radiation-induced mid-gap voltage shift using a simple charge trap model. The depth profile of fixed charge in insulator before irradiation was evaluated by the mid-gap voltage of MNOS structures with varying insulator thicknesses using slanted etching method. The irradiation tests were carried out using Co-60 gamma ray source up to 1 Mrad(Si) with the gate voltage of +6 or {minus}6 V. The calculated results using the model can be fitted well to the experimental results, and the authors confirmed the model is very useful to discuss the radiation-induced trapped charge. By simulating the mid-gap voltage shift of MNOS structures, they considered the possibility for radiation hardened device.

  17. Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

  18. Medium-induced gluon radiation in hard forward parton scattering in the saturation formalism

    NASA Astrophysics Data System (ADS)

    Munier, Stéphane; Peigné, Stéphane; Petreska, Elena

    2017-01-01

    We derive the medium-induced, fully coherent soft gluon radiation spectrum associated with the hard forward scattering of an energetic parton off a nucleus, in the saturation formalism within the Gaussian approximation for the relevant correlators of Wilson lines and for finite number of colors. The validity range of the result is rigorously specified by keeping track of the order of magnitude of subleading contributions to the spectrum. The connection between the saturation formalism and the opacity expansion used in previous studies of the same observable is made apparent. Our calculation sets the basis for further studies of the interplay between saturation and fully coherent energy loss in hard forward parton scattering.

  19. Microprocessing of human hard tooth tissues surface by mid-infrared erbium lasers radiation

    NASA Astrophysics Data System (ADS)

    Belikov, Andrey V.; Shatilova, Ksenia V.; Skrypnik, Alexei V.

    2015-03-01

    A new method of hard tooth tissues laser treatment is described. The method consists in formation of regular microdefects on tissue surface by mid-infrared erbium laser radiation with propagation ratio M2<2 (Er-laser microprocessing). Proposed method was used for preparation of hard tooth tissues surface before filling for improvement of bond strength between tissues surface and restorative materials, microleakage reduction between tissues surface and restorative materials, and for caries prevention as a result of increasing microhardness and acid resistance of tooth enamel.

  20. R&D Studies on Radiation Hard Wavelength Shifting Fiber for CMS Hadronic Endcap Calorimeter Upgrade

    NASA Astrophysics Data System (ADS)

    Neuhaus, John

    2009-11-01

    The Hadronic Endcap (HE) calorimeters of the CMS experiment cover the pseudorapidity range of 1.4 to 3 on both sides of the CMS detector, contributing to superior jet and missing transverse energy resolutions. As the integrated luminosity of the LHC increases, the scintillator tiles used in the CMS Hadronic Endcap calorimeter will lose their efficiency. Here, we propose to replace the scintillator tiles in high radiation area with ``radiation hard'' quartz plates. To increase the light collection efficiency, the generated Cerenkov photons are collected by UV absorbing wavelength shifting (WLS) fibers. Our previous study has shown that quartz plates and plastic wavelength shifting fibers can be used as an effective calorimeter. However there is no radiation hard WLS fiber commercially available. Here we summarize the R&D studies on constructing a radiation hard WLS fiber prototype in University of Iowa CMS Laboratories. The results from the tests performed on quartz fibers treated with p-Terphenyl, as well as the Geant4 simulations of this prototype are presented.

  1. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    SciTech Connect

    Rasouli, C.; Pourshahab, B.; Rasouli, H.; Hosseini Pooya, S. M.; Orouji, T.

    2014-05-15

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  2. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak.

    PubMed

    Rasouli, C; Pourshahab, B; Hosseini Pooya, S M; Orouji, T; Rasouli, H

    2014-05-01

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points--three TLDs per point--to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  3. FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)

    SciTech Connect

    Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

    2007-01-01

    We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

  4. The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

    PubMed

    Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

    2007-07-01

    Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

  5. Radiation hard silicon particle detectors for HL-LHC-RD50 status report

    NASA Astrophysics Data System (ADS)

    Terzo, S.

    2017-02-01

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors.

  6. Effect of radiation light characteristics on surface hardness of paint-on resin for shade modification.

    PubMed

    Arikawa, Hiroyuki; Kanie, Takahito; Fujii, Koichi; Ban, Seiji

    2005-12-01

    The purpose of this study was to investigate the effect of radiation light characteristics--of different types of clinical light-curing unit--on polymerization efficiency, as determined by the surface hardness of light-cured paint-on resins. Four shades of paint-on resin for shade modification of restorative resins were used. Materials were cured using one laboratory and three clinical light-curing units with different light sources, namely tungsten-halogen, LED, plasma arc, and xenon flash lamps. Knoop hardness measurements were taken at both the top and bottom surfaces of the specimens to assess the mechanical properties and degree of polymerization. Both LED and plasma arc light units caused significantly poorer surface hardness than the halogen and laboratory xenon lights. In addition, the transparent shade was more sensitive to surface hardness than other chromatic shades. Our results indicated that the polymerization efficiency of paint-on resin was significantly influenced by the radiation light characteristics of clinical light-curing units.

  7. Radiation Hard Plastic Scintillators for a New Generation of Particle Detectors

    NASA Astrophysics Data System (ADS)

    Dettmann, M.; Herrig, V.; Maldonis, J.; Neuhaus, J.; Shrestha, D.; Rajbhandari, P.; Thune, Z.; Been, M.; Martinez-Szewczyk, M.; Khristenko, V.; Onel, Y.; Akgun, U.

    2017-03-01

    The radiation hardness of specific scintillating materials used in particle physics experiments is one of the main focuses of research in detector development. This report summarizes the preparation methods, light yield characterization and radiation damage tests of a plastic scintillator with a polysiloxane base and pTP and bis-MSB dopants. The scintillator is shown to be a promising candidate for particle detectors with its intense light output around 400 nm and very little scintillation or transmission loss after proton irradiation of 4 × 105 Gy.

  8. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    NASA Astrophysics Data System (ADS)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  9. Observation of hard radiations in a laboratory atmospheric high-voltage discharge

    NASA Astrophysics Data System (ADS)

    Agafonov, A. V.; Bogachenkov, V. A.; Chubenko, A. P.; Oginov, A. V.; Rodionov, A. A.; Rusetskiy, A. S.; Ryabov, V. A.; Shepetov, A. L.; Shpakov, K. V.

    2017-04-01

    The new results concerning neutron emission detection from a laboratory high-voltage discharge in the air are presented. Data were obtained with a combination of plastic scintillation detectors and 3He-filled counters of thermal neutrons. Strong dependence of the hard x-ray and neutron radiation appearance on the field strength near electrodes, which is determined by their form, was found. We have revealed a more sophisticated temporal structure of the neutron bursts observed during electric discharge.

  10. Quantum effect on modulational instability of laser radiation in a semiconductor plasma

    SciTech Connect

    Amin, M. R.

    2010-01-15

    Modulational instability of a high power laser radiation in a homogeneous unmagnetized piezoelectric semiconductor plasma has been investigated analytically. The fluid equations of quantum hydrodynamics coupled with the Maxwell's equations have been employed to find the nonlinear response of electrons in the piezoelectric semiconductor. The analysis is carried out through the derivation of the nonlinear dispersion relation for the four-wave modulational instability. An expression for the growth rate of the instability including the quantum effect due to Bohm potential has been obtained from the nonlinear dispersion relation. The quantum effect is observed to play a vital role in the four-wave scattering process. For a particular set of parameters, the quantum effect enhances the growth rate of the modulational instability by 37% compared to the growth rate predicted by the classical theory.

  11. Method and apparatus for electron-only radiation detectors from semiconductor materials

    SciTech Connect

    2000-05-30

    A system is disclosed for obtaining improved resolution in room temperature semiconductor radiation detectors such as CdZnTe and HgI{sub 2}, which exhibit significant hole-trapping. A electrical reference plane is established about the perimeter of a semiconductor crystal and disposed intermediately between two oppositely biased end electrodes. The intermediate reference plane comprises a narrow strip of wire in electrical contact with the surface of the crystal, biased at a potential between the end electrode potentials and serving as an auxiliary electrical reference for a chosen electrode--typically the collector electrode for the more mobile charge carrier. This arrangement eliminates the interfering effects of the less mobile carriers as these are gathered by their electrode collector.

  12. The role of radiation hard solar cells in minimizing the costs of global satellite communication systems

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.; Walters, Robert J.; Messenger, Scott R.; Burke, Edward A.

    1996-01-01

    An analysis embodied in a PC computer program is presented, which quantitatively demonstrates how the availability of radiation hard solar cells can help minimize the cost of a global satellite communications system. An important distinction between the currently proposed systems, such as Iridium, Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation at orbital altitudes within the earth's radiation belts (10(exp 3) to 10(exp 4)km) can reduce the total cost of a system by several hundred percent, so long as radiation hard components including solar cells can be used. A detailed evaluation of the predicted performance of photovoltaic arrays using several different planar solar cell technologies is given, including commercially available Si and GaAs/Ge, and InP/Si which is currently under development. Several examples of applying the program are given, which show that the end of life (EOL) power density of different technologies can vary by a factor of ten for certain missions. Therefore, although a relatively radiation-soft technology can usually provide the required EOL power by simply increasing the size of the array, the impact upon the total system budget could be unacceptable, due to increased launch and hardware costs. In aggregate, these factors can account for more than a 10% increase in the total system cost. Since the estimated total costs of proposed global-coverage systems range from $1B to $9B, the availability of radiation-hard solar cells could make a decisive difference in the selection of a particular constellation architecture.

  13. Satellite project "CORONAS-PHOTON" for study of solar hard radiation

    NASA Astrophysics Data System (ADS)

    Kotov, Yu.; Cor-Phot Team

    "CORONAS-PHOTON" is the Russian mission for study of the solar hard electromagnetic radiation in the very wide energy range from Extreme UV up to high-energy gamma - radiation. GOAL OF PROJECT: The investigation of energy accumulation and its transformation into energy of accelerated particles processes during solar flares; the study of the acceleration mechanisms, propagation and interaction of fast particles in the solar atmosphere; the study of the solar activity correlation with physical-chemical processes in the Earth upper atmosphere. SCIENTIFIC PAYLOAD CAPABILITY Radiation / Energy region / Detector type: Full solar disk X- radiation / 2keV - 2000MeV / Prop. counter; NaI(Tl); Full solar disk X- and γ-radiation / NaI(Tl)/CsI(Na) phoswich; Full solar disk X- and γ-radiation and solar neutrons / 20 - 300MeV / YalO_3(Ce); CsI(Tl); Hard X-ray polarization in large flares / 20 - 150keV / p-terphenyl scatterer and CsI(Na) absorbers; Full solar disk EUV-radiation monitoring / 6 spectral windows in <10 - 130nm / Filtered photodiodes; Solar images in narrow spectral bands and monochromatic emission lines of hot plasma / Emission of HeII, SiXI, FeXXI, FeXXIII, MgXII ions / Multi-layer and Bregg spherical crystal quartz mirrors with CCDs; Additionally, the temporal and energy spectra of electrons (0.2-14MeV), protons (1-61MeV) and nuclei (Z<26, 2-50MeV/nuclon) at the satellite orbit will be registrated by several instruments. MAIN CHARACTERISTICS OF SPACECRAFT: Spacecraft weight: 1900 kg; Orbit type: Circular; Scientific payload weight: 540 kg; Height: 500 km; Orientation to the Sun [arc min]: better 5; Inclination: 82.5 degree; Instability of orientation [deg/s]: less 0.005; Solar - synchronous orbit is under study. Launching date of "CORONAS-PHOTON" spacecraft is 2006.

  14. On the nature of the sources of hard pulse X-ray radiation

    NASA Technical Reports Server (NTRS)

    Shklovskiy, I. S.

    1978-01-01

    Besides the identified sources of cosmic pulse X-ray radiation with globular clusters NGC 6624, NGC 1851 and MXB 1730-335 several new identifications were made. The source in Norma was probably identified with globular cluster NGC 5927, the source in Aquila with globular cluster NGC 6838 (M71), and the source in Puppis with globular cluster NGC 2298. Gamma pulses discovered by the Vela satellites and X-ray pulses thoroughly measured by the SAS-3, Ariel-5, and ANS satellites are thought to be the same phenomenon. The sources of such a radiation must be some kind of peculiarity at the central part of globular clusters; it is most probably a massive black hole. The sources of hard pulse radiation which cannot be identified with globular clusters are considered to be a new kind of galactic object, invisible globular clusters, which are naked nuclei of globular clusters.

  15. Radiation Hardness Tests of SiPMs for the JLab Hall D Barrel Calorimeter

    SciTech Connect

    Yi Qiang, Carl Zorn, Fernando Barbosa, Elton Smith

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed

  16. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    SciTech Connect

    Wang, C. Wang, F.; Cao, J. C.

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  17. Near-field thermal radiation transfer between semiconductors based on thickness control and introduction of photonic crystals

    NASA Astrophysics Data System (ADS)

    Inoue, Takuya; Asano, Takashi; Noda, Susumu

    2017-03-01

    We numerically investigate the spectral control of near-field thermal radiation transfer using interband absorption in semiconductors and the band-folding effect in photonic crystals (PCs) for highly efficient thermophotovoltaics. We reveal that the near-field coupling between two semiconductors (Si and GaSb) realizes frequency-selective thermal radiation transfer concentrated above their bandgap energy when their thicknesses are optimized considering their absorption coefficient spectra. Moreover, we elucidate the role of PC structures in the near-field thermal radiation transfer and demonstrate that the band-folding effect in PCs can further increase both the radiation power and frequency selectivity of the near-field thermal radiation transfer.

  18. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  19. CONTROL OF LASER RADIATION PARAMETERS: Harmonic modulation of radiation of an external-feedback semiconductor laser

    NASA Astrophysics Data System (ADS)

    Sukharev, Aleksandr G.; Napartovich, A. P.

    2007-02-01

    The appearance of the harmonic modulation regime at the Hopf bifurcation point is described analytically for a delayed-feedback semiconductor laser. The second-order delay differential equation with complex coefficients is derived. The frequency of oscillations appearing at the Hopf bifurcation point is determined by the solution of two relatively simple transcendental equations, from which the bifurcation point itself is found. These equations contain dependences on all the control parameters of the problem. The exact upper and lower limits of the oscillation frequency are found. A comparison with numerical results shows that the modulation frequency is preserved almost constant in a broad range of feedback phases. A procedure is proposed for determining the parameters of the laser providing the presence of bifurcations with a passage to oscillations with the specified frequency. The results obtained in the paper are of interest for WDM communication systems.

  20. Foreign technology assessment: Environmental evaluation of a radiation-hard oscillator/divider

    NASA Astrophysics Data System (ADS)

    Dvorack, M. A.

    1993-03-01

    Salford Electrical Instruments, Ltd., and the General Electric Company's Hirst Research Center, under contract to the United Kingdom's (UK) Ministry of Defence, developed a radiation-hard, leadless chip-carrier-packaged oscillator/divider. Two preproduction clocks brought to Sandia National Laboratories (SNL) by a potential SNL customer underwent mechanical and thermal environmental evaluation. Because of the subsequent failure of one device and the deteriorating condition of another device, the devices were not subjected to radiation tests. The specifics of the environmental evaluation performed on these two clocks and the postmortem analysis of one unit, which ultimately failed, are described. Clock startup time versus temperature studies were also performed and compared to an SNL-designed clock having the same fundamental frequency.

  1. The role of radiation hard solar cells in minimizing the costs of global satellite communications systems

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.; Walters, Robert J.; Messenger, Scott R.; Burke, Edward A.

    1995-01-01

    An analysis embodied in a PC computer program is presented which quantitatively demonstrates how the availability of radiation hard solar cells can minimize the cost of a global satellite communication system. The chief distinction between the currently proposed systems, such as Iridium Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation within the earth's radiation belts can reduce the total system cost by as much as a factor of two, so long as radiation hard components including solar cells, can be used. A detailed evaluation of several types of planar solar cells is given, including commercially available Si and GaAs/Ge cells, and InP/Si cells which are under development. The computer program calculates the end of life (EOL) power density of solar arrays taking into account the cell geometry, coverglass thickness, support frame, electrical interconnects, etc. The EOL power density can be determined for any altitude from low earth orbit (LEO) to geosynchronous (GEO) and for equatorial to polar planes of inclination. The mission duration can be varied over the entire range planned for the proposed satellite systems. An algorithm is included in the program for determining the degradation of cell efficiency for different cell technologies due to proton and electron irradiation. The program can be used to determine the optimum configuration for any cell technology for a particular orbit and for a specified mission life. Several examples of applying the program are presented, in which it is shown that the EOL power density of different technologies can vary by an order of magnitude for certain missions. Therefore, although a relatively radiation soft technology can be made to provide the required EOL power by simply increasing the size of the array, the impact on the total system budget could be unacceptable, due to increased launch and

  2. Radiation damage effects in Si materials and detectors and rad-hard Si detectors for SLHC

    NASA Astrophysics Data System (ADS)

    Li, Z.

    2009-03-01

    Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC applications, where the total fluence is in the order of 1 × 1015 neq/cm2 for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the SLHC, however, whit an increased total fluence up to 1 × 1016 neq/cm2, the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels. Several new approaches have been developed to make Si detector more radiation hard/tolerant to such ultra-high radiation, including 3D Si detectors, Current-Injected-Diodes (CID) detectors, and Elevated temperature annealing.

  3. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

    SciTech Connect

    Puzanov, A. S.; Obolenskiy, S. V. Kozlov, V. A.; Volkova, E. V.; Paveliev, D. G.

    2015-12-15

    The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.

  4. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    SciTech Connect

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-08-23

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described.

  5. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  6. The structure study of thin semiconductor and dielectric films by diffraction of synchrotron radiation

    NASA Astrophysics Data System (ADS)

    Yurjev, G. S.; Fainer, N. I.; Maximovskiy, E. A.; Kosinova, M. L.; Sheromov, M. A.; Rumyantsev, Yu. M.

    1998-02-01

    The structure of semiconductor and dielectric thin (100-300 nm) films was studied by diffraction of synchrotron radiation. The diffraction experiments were performed at both the station "Anomalous scattering" of the storage ring synchrotron facility VEPP-3 and DRON-4 diffractometer. The structure of CdS thin films grown on fused silica, single Si(100) and InP(100) substrates was investigated. The structure of Cu 2S thin films grown on fused silica, single Si(100) substrates and CdS/Si(100)-heterostructure was studied. The structure study was performed on Si 3N 4 films grown on GaAs(100) substrates. The structure of thin BN layers grown on single Si(100) substrates was studied. It was established that structural parameters of above-mentioned thin films coincide on the parameters of JCPDS International Centre for Diffraction Data.

  7. Digital radiology using active matrix readout of amorphous selenium: radiation hardness of cadmium selenide thin film transistors.

    PubMed

    Zhao, W; Waechter, D; Rowlands, J A

    1998-04-01

    A flat-panel x-ray imaging detector using active matrix readout of amorphous selenium (a-Se) is being investigated for digital radiography and fluoroscopy. The active matrix consists of a two-dimensional array of thin film transistors (TFTs). Radiation penetrating through the a-Se layer will interact with the TFTs and it is important to ensure that radiation induced changes will not affect the operation of the x-ray imaging detector. The methodology of the present work is to investigate the effects of radiation on the characteristic curves of the TFTs using individual TFT samples made with cadmium selenide (CdSe) semiconductor. Four characteristic parameters, i.e., threshold voltage, subthreshold swing, field effect mobility, and leakage current, were examined. This choice of parameters was based on the well established radiation damage mechanisms for crystalline silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), which have a similar principle of operation as CdSe TFTs. It was found that radiation had no measurable effect on the leakage current and the field effect mobility. However, radiation shifted the threshold voltage and increased the subthreshold swing. But even the estimated lifetime dose (50 Gy) of a diagnostic radiation detector will not affect the normal operation of an active matrix x-ray detector made with CdSe TFTs. The mechanisms of the effects of radiation will be discussed and compared with those for MOSFETs and hydrogenated amorphous silicon (a-Si:H) TFTs.

  8. Status of radiation damage measurements in room temperature semiconductor radiation detectors

    SciTech Connect

    Franks, L.A.; James, R.B.

    1998-04-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was found under these irradiation conditions.

  9. Radiation hard mode-locked laser suitable as a spaceborne frequency comb.

    PubMed

    Buchs, Gilles; Kundermann, Stefan; Portuondo-Campa, Erwin; Lecomte, Steve

    2015-04-20

    We report ground-level gamma and proton radiation tests of a passively mode-locked diode-pumped solid-state laser (DPSSL) with Yb:KYW gain medium. A total gamma dose of 170 krad(H(2)O) applied in 5 days generates minor changes in performances while maintaining solitonic regime. Pre-irradiation specifications are fully recovered over a day to a few weeks timescale. A proton fluence of 9.76·10(10) cm(-2) applied in few minutes shows no alteration of the laser performances. Furthermore, complete stabilization of the laser shows excellent noise properties. From our results, we claim that the investigated femtosecond DPSSL technology can be considered rad-hard and would be suitable for generating frequency combs compatible with long duration space missions.

  10. Analysis of space radiation effects in gallium arsenide and cadmium selenide semiconductor samples using luminescence spectroscopic techniques. Master's thesis

    SciTech Connect

    Shaffer, B.L.

    1990-12-01

    Analysis of space radiation effects in gallium arsenide and cadmium selenide semiconductor samples using luminescence spectroscopic techniques. The M0006 semiconductor samples were placed into a 28.5 degree inclination, 480 km altitude, near-circular orbit aboard the Long Duration Exposure Facility satellite and exposed to direct space environment for a period of 11 months, and were shielded by 0.313 inches of aluminum for another 58 months. The samples were examined for changes using cathodoluminescence and photoluminescence in various wavelength regions from 0.5 to 1.8 micrometers. Samples were cooled to approximately 10 degrees Kelvin in a vacuum of 10-8. (JS)

  11. Measurement of Radiation Induced Damages in Semiconductor Materials Useful as Photovoltaic and Nuclear Detection Devices

    NASA Astrophysics Data System (ADS)

    Gul, Rubi; Keeter, Kara; Rodriguez, Rene

    2007-05-01

    Radiation interactions with materials cause a change in electronic and physical properties of the material, which affect the performance of the devices. It is a key issue in the employment of these materials in medical, space, security and other scientific applications. In our research we have determined the defects and their generation rate induced by gamma rays of energy 0.11-22 MeV, in CuInS2. We have used a simple model consisting of classical physics principles and Monte Carlo simulation software. The simulation results are in agreement with other published results done for other semiconductor materials. Our collaborators at INL will investigate different techniques for fabrication of thin films of CdZnTe and CuInS2 by using Radiofrequency Pulsed Plasma Enhanced Chemical Vapor Deposition and Pressurized Solvent techniques. Next, defects will be induced in the thin-film samples by exposure to a bremsstrahlung gamma-ray beam. The radiation dose will range from 5 to 25 kGy. Qualitative and quantitative measurements of the defects in the crystals will be done by gamma-ray spectroscopy and PICTS (Photo induced current transient spectroscopy). To cite this abstract, use the following reference: http://meetings.aps.org/link/BAPS.2007.NWS07.C1.5

  12. Decision feedback equalization for radiation hard data link at 5 Gbps

    NASA Astrophysics Data System (ADS)

    Wallängen, V.; Garcia-Sciveres, M.

    2017-01-01

    The increased particle collision rate following the upgrade of the Large Hadron Collider (LHC) to an increased luminosity requires an increased readout data speed, especially for the ATLAS pixel detector, located closest to the particle interaction point. For this reason, during the Phase-II upgrade of the ATLAS experiment the output data speed of the pixel front-end chips will be increased from 160 Mbps to 5 Gbps. The increased radiation levels will require a radiation hard data transmission link to be designed to carry this data from the pixel front-end to the off-detector system where it will undergo optical conversion. We propose a receiver utilizing the concept of Decision Feedback Equalization (DFE) to be used in this link, where the number of filter taps can be determined from simulations using S-parameter data from measurements of various customized cable prototypes under characterization as candidates to function as transmission medium between the on-chip data driver and the receiver of the link. A dedicated framework has been set up in Matlab to analyze the S-parameter characteristics for the various cable prototypes and investigate the possibilities for signal recovery and maintained signal integrity using DFE, as well as pre-emphasis and different encoding schemes. The simulation results indicate that DFE could be an excellent choice for expanding the system bandwidth to reach required data speeds with minimal signal distortion.

  13. High Speed, Radiation Hard CMOS Pixel Sensors for Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Contarato, Devis; Denes, Peter; Doering, Dionisio; Joseph, John; Krieger, Brad

    CMOS monolithic active pixel sensors are currently being established as the technology of choice for new generation digital imaging systems in Transmission Electron Microscopy (TEM). A careful sensor design that couples μm-level pixel pitches with high frame rate readout and radiation hardness to very high electron doses enables the fabrication of direct electron detectors that are quickly revolutionizing high-resolution TEM imaging in material science and molecular biology. This paper will review the principal characteristics of this novel technology and its advantages over conventional, optically-coupled cameras, and retrace the sensor development driven by the Transmission Electron Aberration corrected Microscope (TEAM) project at the LBNL National Center for Electron Microscopy (NCEM), illustrating in particular the imaging capabilities enabled by single electron detection at high frame rate. Further, the presentation will report on the translation of the TEAM technology to a finer feature size process, resulting in a sensor with higher spatial resolution and superior radiation tolerance currently serving as the baseline for a commercial camera system.

  14. Radiation hardness studies of n + -in-n planar pixel sensors for the ATLAS upgrades

    NASA Astrophysics Data System (ADS)

    Altenheiner, S.; Goessling, C.; Jentzsch, J.; Klingenberg, R.; Muenstermann, D.; Rummler, A.; Troska, G.; Wittig, T.

    2011-12-01

    The ATLAS experiment at the LHC is planning upgrades of its pixel detector to cope with the luminosity increase foreseen in the coming years within the transition from LHC to Super-LHC (SLHC/HL-LHC). Associated with the increase in instantaneous luminosity is a rise of the target integrated luminosity from 730 to about 3000 fb -1 which directly translates into significantly higher radiation damage. These upgrades consist of the installation of a 4th pixel layer, the insertable b-layer IBL, with a mean sensor radius of only 32 mm from the beam axis, before 2016/17. In addition, the complete pixel detector will be exchanged before 2020/21. Being very close to the beam, the radiation damage of the IBL sensors might be as high as 5×1015 neq cm-2 at their end-of-life. The total fluence of the innermost pixel layer after the SLHC upgrade might even reach 2×1016 neq cm-2. To investigate the radiation hardness and suitability of the current ATLAS pixel sensors for these fluences, n +-in-n silicon pixel sensors from the ATLAS Pixel production have been irradiated by reactor neutrons to the IBL design fluence and been tested with pions at the SPS and with electrons from a 90Sr source in the laboratory. The collected charge after IBL fluences was found to exceed 10 000 electrons per MIP at 1 kV of bias voltage which is in agreement with data collected with strip sensors. After SLHC fluences, still reliable operation of the devices could be observed with a collected charge of more than 5000 electrons per MIP.

  15. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    SciTech Connect

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  16. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    NASA Astrophysics Data System (ADS)

    Laminack, William; Gole, James

    2015-12-01

    A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  17. Monte Carlo simulation for the electron cascade due to gamma rays in semiconductor radiation detectors

    SciTech Connect

    Narayan, Raman D.; Miranda, Ryan; Rez, Peter

    2012-03-15

    A Monte Carlo code was developed for simulating the electron cascade in radiation detector materials. The electron differential scattering cross sections were derived from measured electron energy-loss and optical spectra, making the method applicable for a wide range of materials. The detector resolution in a simplified model system shows dependence on the bandgap, the plasmon strength and energy, and the valence band width. In principle, these parameters could be optimized to improve detector performance. The intrinsic energy resolution was calculated for three semiconductors: silicon (Si), gallium arsenide (GaAs), and zinc telluride (ZnTe). Setting the ionization thresholds for electrons and holes is identified as a critical issue, as this strongly affects both the average electron-hole pair energy w and the Fano factor F. Using an ionization threshold from impact ionization calculations as an effective bandgap yields pair energies that are well matched to measured values. Fano factors of 0.091 (Si), 0.100 (GaAs), and 0.075 (ZnTe) were calculated. The Fano factor calculated for silicon using this model was lower than some results from past simulations and experiments. This difference could be attributed to problems in simulating inter-band transitions and the scattering of low-energy electrons.

  18. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  19. Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Swift, G. M.; Johnston, A. H.

    1995-01-01

    In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

  20. Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

    SciTech Connect

    Pengg, F. |; Campbell, M.; Heijne, E.H.M.; Snoeys, W.

    1996-06-01

    Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e{sup {minus}}r.m.s. before and 150e{sup {minus}}r.m.s. after irradiation. With a discriminator threshold set to 5000e{sup {minus}}, which reduces for the same bias setting to 400e{sup {minus}} after irradiation, the threshold variation is 300e{sup {minus}}r.m.s. and 250e{sup {minus}}r.m.s. respectively. The time walk is 40ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation.

  1. Radiation Hard Bandpass Filters for Mid- to Far-IR Planetary Instruments

    NASA Technical Reports Server (NTRS)

    Brown, Ari D.; Aslam, Shahid; Chervenack, James A.; Huang, Wei-Chung; Merrell, Willie C.; Quijada, Manuel; Steptoe-Jackson, Rosalind; Wollack, Edward J.

    2012-01-01

    We present a novel method to fabricate compact metal mesh bandpass filters for use in mid- to far-infrared planetary instruments operating in the 20-600 micron wavelength spectral regime. Our target applications include thermal mapping instruments on ESA's JUICE as well as on a de-scoped JEO. These filters are novel because they are compact, customizable, free-standing copper mesh resonant bandpass filters with micromachined silicon support frames. The filters are well suited for thermal mapping mission to the outer planets and their moons because the filter material is radiation hard. Furthermore, the silicon support frame allows for effective hybridization with sensors made on silicon substrates. Using a Fourier Transform Spectrometer, we have demonstrated high transmittance within the passband as well as good out-of-band rejection [1]. In addition, we have developed a unique method of filter stacking in order to increase the bandwidth and sharpen the roll-off of the filters. This method allows one to reliably control the spacing between filters to within 2 microns. Furthermore, our method allows for reliable control over the relative position and orienta-tion between the shared faces of the filters.

  2. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  3. Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Bertness, K. A.; Kibbler, A. E.; Kramer, C.; Olson, J. M.

    1994-01-01

    In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

  4. Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Olson, J. M.; Bertness, K. A.; Friedman, D. J.; Kibbler, A.; Cavicchi, B. T.; Krut, D. D.

    1991-01-01

    The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

  5. Semiconductor photoelectrochemistry

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.

    1983-01-01

    Semiconductor photoelectrochemical reactions are investigated. A model of the charge transport processes in the semiconductor, based on semiconductor device theory, is presented. It incorporates the nonlinear processes characterizing the diffusion and reaction of charge carriers in the semiconductor. The model is used to study conditions limiting useful energy conversion, specifically the saturation of current flow due to high light intensity. Numerical results describing charge distributions in the semiconductor and its effects on the electrolyte are obtained. Experimental results include: an estimate rate at which a semiconductor photoelectrode is capable of converting electromagnetic energy into chemical energy; the effect of cell temperature on the efficiency; a method for determining the point of zero zeta potential for macroscopic semiconductor samples; a technique using platinized titanium dioxide powders and ultraviolet radiation to produce chlorine, bromine, and iodine from solutions containing their respective ions; the photoelectrochemical properties of a class of layered compounds called transition metal thiophosphates; and a technique used to produce high conversion efficiency from laser radiation to chemical energy.

  6. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  7. Strategy on removing oxygen impurity for crystal growth of one candidate Tl6SeI4 for room-temperature hard radiation detector(Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Lin, Wenwen; Liu, Zhifu; Churilov, Alexei V.; He, Yihui; Kim, Hadong; Cirignano, Leonard J.; Malliakas, Christos D.; Li, Hao; Stoumpos, Constantinos C.; Chung, Duck Young; Wessels, Bruce W.; Kanatzidis, Mercouri G.

    2016-09-01

    Thallium based chalcogenide and halide semiconductors such as Tl4HgI6, TlGaSe2, Tl6SeI4 and Tl6SI4 are promising materials for room-temperature hard radiation detection. They feature appropriate band gaps, high mass densities and facile growth technology. However, these materials are being plagued by the Tl oxides impurity from Tl precursor or Tl containing binary precursors, which leads to problems including tube breakage, parasitic nucleation and detector performance deterioration. In this work, we present a facile way to chemically reduce Tl oxidations, and then eliminate oxygen impurity by adding high-purity graphite powder during synthesis and crystal growth. We also further investigated the reactivity between Tl oxides and graphite. The detector performance of Tl6SeI4 crystal was dramatically improved after lowering/removing the oxygen impurities. This result not only indicates the significance of removing oxygen impurity for improving detector performance. Our results suggest that the chemical reduction method we developed by adding carbon powder during synthesis is highly effective in substantially reducing oxygen impurities from Tl containing materials.

  8. Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation

    SciTech Connect

    Ziaziulia, P. A.; Malevich, V. L.; Manak, I. S.; Krotkus, A.

    2012-02-15

    An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

  9. Hard-X and gamma-ray imaging detector for astrophysics based on pixelated CdTe semiconductors

    NASA Astrophysics Data System (ADS)

    Gálvez, J.-L.; Hernanz, M.; Álvarez, L.; Artigues, B.; Ullán, M.; Lozano, M.; Pellegrini, G.; Cabruja, E.; Martínez, R.; Chmeissani, M.; Puigdengoles, C.

    2016-01-01

    Stellar explosions are astrophysical phenomena of great importance and interest. Instruments with high sensitivities are essential to perform detailed studies of cosmic explosions and cosmic accelerators. In order to achieve the needed performance, a hard-X and gamma-ray imaging detector with mm spatial resolution and large enough efficiency is required. We present a detector module which consists of a single CdTe crystal of 12.5 × 12.5mm 2 and 2mm thick with a planar cathode and with the anode segmented in an 11x11 pixel array with a pixel pitch of 1 mm attached to the readout chip. Two possible detector module configurations are considered: the so-called Planar Transverse Field (PTF) and the Parallel Planar Field (PPF). The combination of several modules in PTF or PPF configuration will achieve the desired performance of the imaging detector. The sum energy resolution of all pixels of the CdTe module measured at 122 keV and 356 keV is 3.8% and 2% respectively, in the following operating conditions: PPF irradiation, bias voltage -500 V and temperature -10̂ C.

  10. The radiation hardness and temperature stability of Planar Light-wave Circuit splitters for the High Luminosity LHC

    NASA Astrophysics Data System (ADS)

    Ryder, N. C.; Hamilton, P.; Huffman, B. T.; Teng, P. K.; Weidberg, A. R.; Issever, C.

    2011-10-01

    High Luminosity LHC (HL-LHC) Inner Tracker designs may include the sharing of Timing, Trigger and Control (TTC) signals between several tracker modules. This is possible because the highest frequency signals are common to all modules. Such designs are an attractive option because they reduce the number of optical links required and hence the cost. These designs will require optical signal splitters that are radiation hard up to high doses and capable of operating in cold temperatures. Optical splitters are available as either fused-fibre splitters or Planar Light-wave Circuit (PLC) splitters. PLC splitters are preferable because they are smaller than fused-fibre splitters. A selection of PLC splitters from different manufacturers and of two different technologies (silica and glass based) have been tested for radiation hardness up to a dose of 500 kGy(Si) and for temperature stability. All the tested splitters displayed small increases in insertion losses ( < 0.1 dB) in reducing the operating temperature from 25°C to -25°C. The silica based splitters from all manufacturers did not exhibit significant radiation induced insertion losses, despite the high dose they were exposed to. The glass based sample, however, had a per channel radiation induced insertion loss of up to 1.16 dB. Whilst the silica based splitters can be considered as qualified for HL-LHC use with regards to radiation hardness, the glass technology would require further testing at a lower, more realistic, dose to also be considered as a potential component for HL-LHC upgrade designs.

  11. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films [review article

    NASA Astrophysics Data System (ADS)

    Lamberti, C.

    2004-05-01

    In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques. Among them, a leading role has been certainly played by those exploiting synchrotron radiation (SR) sources. In fact synchrotron radiation has distinct advantages as a photon source, notably high brilliance and continuous energy spectrum; by using the latter characteristic atomic selectivity can be obtained and this is of fundamental help to investigate the structural environment of atoms present only in a few angstrom (Å) thick interface layers of heterostructures. The third generation synchrotron radiation sources have allowed to reach the limit of measuring a monolayer of material, corresponding to about 10 14 atoms/cm 2. Since, in the last decade, the use of intentionally strained heterostructures has greatly enhanced the performance of electrical and electro-optical semiconductor, a particular attention will be devoted to intentionally strained superlattices. First the effect of strain on the band lineups alignments in strained heterostructures will be discussed deeply. Then the attention will be focused on to review the most important results obtained by several groups in the characterization of semiconductor heterostructures using the following structural SR techniques: (i) X-ray absorption-based techniques such as EXAFS, polarization-dependent EXAFS, surface EXAFS and NEXAFS (or XANES); (ii) X-ray diffraction-based techniques such as high-resolution XRD, grazing incidence XRD, XRD reciprocal space maps, X-ray standing waves and diffraction anomalous fine structure (DAFS); (iii

  12. RADECS Short Course Section 4 Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian

    2003-01-01

    Contents include the following: Introduction. Programmatic aspects of RHA. RHA componens: requirements and specifications; mission radiation environment; and parts selection and radiation tolerance. Analysis at the function/subsystem/system level: TID/DD; SEE. Conclusion.

  13. Supersonic radiative transport of electron-hole plasma in semiconductors at room temperature studied by laser ultrasonics

    NASA Astrophysics Data System (ADS)

    Gao, W.; Gusev, V.; Glorieux, C.; Thoen, J.; Borghs, G.

    1997-02-01

    A piezoelectric semiconductor CdS 1- xSe x crystal under external electric loading was excited by pulsed nanosecond ultraviolet laser radiation. Acoustic waves were excited via the inverse piezoelectric effect due to the screening of the external electric field by expanding the space distribution of photogenerated electrons and holes. The duration of the interferometrically detected longitudinal acoustic pulses indicated that both the expansion of the screened region in space and the electron-hole plasma expansion are supersonic at the time scale of laser action. The value of 2 × 10 3 cm 2/s obtained for the electron-hole plasma diffusivity leads to the conclusion that the mechanism of this fast carrier transport is photon recycling, i.e. reabsorption of recombination radiation. This conclusion is also supported by the acoustic signals duration independence on magnitude and polarity of the external electric field.

  14. The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Ruddy, Frank H.; Seidel, John G.

    2007-10-01

    Silicon Carbide (SiC) semiconductor radiation detectors are being developed for alpha-particle, X-ray and Gamma-ray, and fast-neutron energy spectrometry. SiC detectors have been operated at temperatures up to 306 °C and have also been found to be highly resistant to the radiation effects of fast-neutron and charged-particle bombardments. In the present work, the alpha-particle response of a SiC detector based on a Schottky diode design has been carefully monitored as a function of 137Cs gamma-ray exposure. The changes in response have been found to be negligible for gamma exposures up to and including 5.4 MGy, and irradiations to higher doses are in progress.

  15. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    SciTech Connect

    Makita, M.; Karvinen, P.; Zhu, D.; Juranic, P. N.; Grünert, J.; Cartier, S.; Jungmann-Smith, J. H.; Lemke, H. T.; Mozzanica, A.; Nelson, S.; Patthey, L.; Sikorski, M.; Song, S.; Feng, Y.; David, C.

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy of >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.

  16. Effects of quenching, irradiation, and annealing processes on the radiation hardness of silica fiber cladding materials (I)

    NASA Astrophysics Data System (ADS)

    Wen, Jianxiang; Gong, Renxiang; Xiao, Zhongyin; Luo, Wenyun; Wu, Wenkai; Luo, Yanhua; Peng, Gang-ding; Pang, Fufei; Chen, Zhenyi; Wang, Tingyun

    2016-07-01

    Silica optical fiber cladding materials were experimentally treated by a series of processes. The treatments involved quenching, irradiation, followed by annealing and subsequent re-irradiation, and they were conducted in order to improve the radiation hardness. The microstructural properties of the treated materials were subsequently investigated. Following the treatment of the optical fiber cladding materials, the results from the electron spin resonance (ESR) analysis demonstrated that there was a significant decrease in the radiation-induced defect structures. The ESR signals became significantly weaker when the samples were annealed at 1000 °C in combination with re-irradiation. In addition, the microstructure changes within the silica optical fiber cladding material were also analyzed using Raman spectroscopy. The experimental results demonstrate that the Sisbnd Osbnd Si bending vibrations at ω3 = 800-820 cm-1 and ω4 = 1000-1200 cm-1 (with longitudinal optical (LO) and transverse optical (TO) splitting bands) were relatively unaffected by the quenching, irradiation, and annealing treatments. In particular, the annealing process resulted in the disappearance of the defect centers; however, the LO and TO modes at the ω3 and ω4 bands were relatively unchanged. With the additional support of the ESR test results, we can conclude that the combined treatment processes can significantly enhance the radiation hardness properties of the optical fiber cladding materials.

  17. Quantitative analysis of flare accelerated electrons through their hard X-ray and microwave radiation

    NASA Technical Reports Server (NTRS)

    Klein, K. L.; Trottet, G.

    1985-01-01

    Hard X-ray and microwave modelling that takes into account the temporal evolution of the electron spectrum as well as the inhomogeneity of the magnetic field and the ambient medium in the radio source is presented. This method is illustrated for the June 29 1980 10:41 UT event. The implication on the process of acceleration/injection is discussed.

  18. Transport Imaging: Developing an Optical Technique to Characterize Bulk Semiconductor Materials for Next Generation Radiation Detectors

    DTIC Science & Technology

    2009-06-01

    OF PAGES 79 14. SUBJECT TERMS Cathodoluminescence, Diffusion , Drift, Mobility, Lifetime, Bismuth Ferrite , BiFeO3 , Semiconductor, Transport...migrate or diffuse from a region of high concentration to low concentration. The diffusion coefficient (D) quantifies the diffusivity of a material...The diffusion coefficient is found using the Einstein relation kTD e μ = where k is Boltzmann’s constant, T is the temperature, e is the charge

  19. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    SciTech Connect

    Jungmann-Smith, J. H. Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.; Cartier, S.; Medjoubi, K.

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  20. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    NASA Astrophysics Data System (ADS)

    Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  1. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Jaggi, A; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10(4) photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm(2) pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm(2). Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  2. Total-dose radiation effects data for semiconductor devices, volume 2

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1981-01-01

    Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

  3. Radiation Hardness Assurance Issues Associated with COTS in JPL Flight Systems: The Challenge of Europa

    NASA Technical Reports Server (NTRS)

    Barnes, C.; Johnston, A.

    1999-01-01

    With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

  4. RADIATION HARDNESS / TOLERANCE OF SI SENSORS / DETECTORS FOR NUCLEAR AND HIGH ENERGY PHYSICS EXPERIMENTS.

    SciTech Connect

    LI,Z.

    2002-09-09

    Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, and space charge concentration. The increase in space charge concentration is particularly damaging since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. Several strategies can be used to make Si detectors more radiation had tolerant to particle radiations. In this paper, the main radiation induced degradations in Si detectors will be reviewed. The details and specifics of the new engineering strategies: material/impurity/defect engineering (MIDE); device structure engineering (DSE); and device operational mode engineering (DOME) will be given.

  5. Radiation-hard analog-to-digital converters for space and strategic applications

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Dantas, A. R. V.

    1985-01-01

    During the course of the Jet Propulsion Laboratory's program to study radiation-hardened analog-to-digital converters (ADCs), numerous milestones have been reached in manufacturers' awareness and technology development and transfer, as well as in user awareness of these developments. The testing of ADCs has also continued with twenty different ADCs from seven manufacturers, all tested for total radiation dose and three tested for neutron effects. Results from these tests are reported.

  6. A Radiation-Hard Silicon Drift Detector Array for Extraterrestrial Element Mapping

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Chen, Wei; De Geronimo, Gianluigi; Keister, Jeff; Li, Shaouri; Li, Zhen; Siddons, David P.; Smith, Graham

    2011-01-01

    Measurement of x-rays from the surface of objects can tell us about the chemical composition Absorption of radiation causes characteristic fluorescence from material being irradiated. By measuring the spectrum of the radiation and identifying lines in the spectrum, the emitting element (s) can be identified. This technique works for any object that has no absorbing atmosphere and significant surface irradiation : Our Moon, the icy moons of Jupiter, the moons of Mars, the planet Mercury, Asteroids and Comets

  7. Irradiate-anneal screening of total dose effects in semiconductor devices. [radiation hardening of spacecraft components of Mariner spacecraft

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Price, W. E.

    1976-01-01

    An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

  8. X-ray photoemission analysis of chemically treated GaTe semiconductor surfaces for radiation detector applications

    SciTech Connect

    Nelson, A. J.; Conway, A. M.; Sturm, B. W.; Behymer, E. M.; Reinhardt, C. E.; Nikolic, R. J.; Payne, S. A.; Pabst, G.; Mandal, K. C.

    2009-07-15

    The surface of the layered III-VI chalcogenide semiconductor GaTe was subjected to various chemical treatments commonly used in device fabrication to determine the effect of the resulting microscopic surface composition on transport properties. Various mixtures of H{sub 3}PO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O were accessed and the treated surfaces were allowed to oxidize in air at ambient temperature. High-resolution core-level photoemission measurements were used to evaluate the subsequent chemistry of the chemically treated surfaces. Metal electrodes were created on laminar (cleaved) and nonlaminar (cut and polished) GaTe surfaces followed by chemical surface treatment and the current versus voltage characteristics were measured. The measurements were correlated to understand the effect of surface chemistry on the electronic structure at these surfaces with the goal of minimizing the surface leakage currents for radiation detector devices.

  9. The role of bandgap energy excess in surface emission of terahertz radiation from semiconductors

    NASA Astrophysics Data System (ADS)

    Alfaro-Gomez, M.; Castro-Camus, E.

    2017-01-01

    We use a Monte-Carlo model to simulate semi-classical photo-carrier dynamics of InAs, InGaAs, and GaAs that leads to terahertz emission. We compare the emission power of all three semiconductors as a function of excitation photon energy finding that the carrier excess excitation energy is more relevant to explain their performance difference than their mobilities. We conclude that ballistic transport after photoexcitation is the dominant mechanism for terahertz emission instead of diffusion driven or surface field driven charge separation, which were traditionally considered the most relevant mechanisms.

  10. R&D of Radiation-Hard Scintillators and WLS Fibers

    NASA Astrophysics Data System (ADS)

    Tiras, Emrah; Wetzel, James; Bilki, Burak; Durgut, Suleyman; Onel, Yasar; Winn, David

    2017-01-01

    Radiation resistant and high light-yield scintillators are in more need than ever at particle physics experiments. In this regard, several polyethylene-based and quartz-based scintillating materials and WLS fibers have been studied. Radiation resistance of plastic scintillators such as PEN, PET, SiX and Eljen samples and WLS fibers has been studied over time after they are exposed to 1.4 and 14 MRad total radiation by 137Cs gamma source. The light-yield and timing measurements of the plastic scintillators as well as coated quartz plates have been studied in beam test at Fermilab Test Beam Facility (FTBF). Here, we discuss the recent developments and the results of beam tests and laboratory measurements.

  11. Low-mass, intrinsically-hard high temperature radiator. Final report, Phase I

    SciTech Connect

    1990-07-15

    This paper reports on the investigation of layered ceramic/metal composites in the design of low-mass hardened radiators for space heat rejection systems. The investigation is part of the Strategic Defence Initiative. This effort evaluated the use of layered composites as a material to form thin-walled, vacuum leaktight heat pipes. The heat pipes would be incorporated into a large heat pipe radiator for waste heat rejection from a space nuclear power source. Composite materials evaluations were performed on combinations of refractory metals and ceramic powders. Fabrication experiments were performed to demonstrate weldability. Two titanium/titanium diboride composite tubes were successfully fabricated into potassium heat pipes and operated at temperatures in excess of 700C. Testing and analysis for composite tubes are described in the report. The study has verified the feasibility of using layered composites for forming thin-walled, light weight heat pipe tubes for use in hardened space radiators.

  12. Improvement of the radiation hardness of a directly converting high resolution intra-oral X-ray imaging sensor

    NASA Astrophysics Data System (ADS)

    Spartiotis, Konstantinos; Pyyhtiä, Jouni; Schulman, Tom

    2003-11-01

    The radiation tolerance of a directly converting digital intra-oral X-ray imaging sensor reported in Spartiotis et al. [Nucl. Instr. and Meth. A 501 (2003) 594] has been tested using a typical dental X-ray beam spectrum. Radiation induced degradation in the performance of the sensor which consists of CMOS signal readout circuits bump bonded to a high resistivity silicon pixel detector was observed already before a dose (in air) of 1 krad. Both increase in the leakage current of the pixel detector manufactured by Sintef, Norway and signal leakage to ground from the gate of the pixel input MOSFETs of the readout circuit were observed and measured. The sensitive part of the CMOS circuit was identified as the protection diode of the gate of the input MOSFET. After removing the gate protection diode no signal leakage was observed up to a dose of 5 krad (air) which approximately corresponds to 125.000 typical dental X-ray exposures. The radiation hardness of the silicon pixel detector was improved by using a modified oxidation process supplied by Colibrys, Switzerland. The improved pixel detectors showed no increase in the leakage current at dental doses.

  13. Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

    NASA Astrophysics Data System (ADS)

    Mu, Yifei; Zhao, Ce Zhou; Qi, Yanfei; Lam, Sang; Zhao, Chun; Lu, Qifeng; Cai, Yutao; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2016-04-01

    The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11 GBq Cs137 gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional capacitance-voltage (C-V) and stress module, a pulse C-V and stress module, a conventional current-voltage (I-V) and stress module, a pulse I-V and stress module, a DC on-the-fly (OTF) module and a pulse OTF module. Electrical characteristics of MOS capacitors or MOSFET devices are measured by each module integrated in the probe station under continuous γ-ray exposure and the measurement results are presented. The dose rates of different gate dielectrics are calculated by a novel calculation model based on the Cs137 γ-ray source placed in the probe station. For the sake of operators' safety, an equivalent dose rate of 70 nSv/h at a given operation distance is indicated by a dose attenuation model in the experimental environment. HfO2 thin films formed by atomic layer deposition are employed to investigate the radiation response of the high-κ material by using the conventional C-V and pulse C-V modules. The irradiation exposure of the sample is carried out with a dose rate of 0.175 rad/s and ±1 V bias in the radiation response testing system. Analysis of flat-band voltage shifts (ΔVFB) of the MOS capacitors suggests that the on-site and real-time/pulse measurements detect more serious degradation of the HfO2 thin films compared with the off-site irradiation and conventional measurement techniques.

  14. Semiconductor millimeter and centimeter wave radiometer for the study of the radiation of an underlying surface

    NASA Technical Reports Server (NTRS)

    Bordonskiy, G. S.; Zazinov, A. N.; Kirsanov, Y. A.; Kravchenko, M. K.; Khapin, Y. B.; Sharapov, A. N.; Etkin, V. S.

    1979-01-01

    A theoretical and experimental investigation of a superheterodyne radiometer system with input frequency converter and intermediate frequency modulation is presented. Conditions are found, at which the temperature sensitivity of the device does not deteriorate. A sensitivity function to external parameters (temperature, heterodyne power) of a radiometer system with intermediate frequency modulation and a Schottky diode frequency converter is presented and calculated. Use of a frequency converter at the second harmonic of the heterodyne permitted simplication of the radiometer design and the use of a semiconductor heterodyne. A 3 cm range intermediate frequency amplifier permitted the use of centimeter wave radiometer signals. Fluctuation sensitivity of radiometers with a 1 sec time constant is 0.3 K at 3.4 mm and 0.06 K at 3 cm.

  15. Transversely diode-pumped Q-switched Nd : YAG laser with injection of radiation from a single-frequency semiconductor laser

    NASA Astrophysics Data System (ADS)

    Bogdanovich, M. V.; Duraev, V. P.; Kalinov, V. S.; Kostik, O. E.; Lantsov, K. I.; Lepchenkov, K. V.; Mashko, V. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Teplyashin, L. L.

    2016-10-01

    A Q-switched Nd : YAG laser with a high-power transverse diode pumping and injection of seed radiation generated by a single-frequency semiconductor laser is described. The threshold seed radiation power at which the Q-switched Nd : YAG switches to the single-frequency mode is 0.44 {\\text{mW}} (radiation intensity 5.6 × 10-2 {\\text{W}} {\\text{cm}}-2). With increasing injection power, the spectral and power characteristics of the Q-switched laser almost do not change at a constant excitation of its active medium. The spectral linewidth of the Q-switched Nd : YAG laser with injection from a TLD-1060-14BF single-frequency semiconductor laser module does not exceed 90 {\\text{MHz}} (wavelength 1064 {\\text{nm}}).

  16. The determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1985-01-01

    When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts of angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).

  17. Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers

    NASA Astrophysics Data System (ADS)

    Oblakowska-Mucha, A.

    2017-02-01

    The major LHC upgrade is planned after ten years of accelerator operation. It is foreseen to significantly increase the luminosity of the current machine up to 1035 cm‑2s‑1 and operate as the upcoming High Luminosity LHC (HL-LHC) . The major detectors upgrade, called the Phase-II Upgrade, is also planned, a main reason being the aging processes caused by severe particle radiation. Within the RD50 Collaboration, a large Research and Development program has been underway to develop silicon sensors with sufficient radiation tolerance for HL-LHC trackers. In this summary, several results obtained during the testing of the devices after irradiation to HL-LHC levels are presented. Among the studied structures, one can find advanced sensors types like 3D silicon detectors, High-Voltage CMOS technologies, or sensors with intrinsic gain (LGAD). Based on these results, the RD50 Collaboration gives recommendation for the silicon detectors to be used in the detector upgrade.

  18. Radiation Hardness Tests of a Scintillation Detector with Wavelength Shifting Fiber Readout

    SciTech Connect

    Alfaro, R.; Sandoval, A.; Cruz, E.; Martinez, M. I.; Paic, G.; Montano, L. M.

    2006-09-25

    We have performed radiation tolerance tests on the BCF-99-29MC wavelength shifting fibers and the BC404 plastic scintillator from Bicron as well as on silicon rubber optical couplers. We used the 60Co gamma source at the Instituto de Ciencias Nucleares facility to irradiate 30-cm fiber samples with doses from 50 Krad to 1 Mrad. We also irradiated a 10x10 cm2 scintillator detector with the WLS fibers embedded on it with a 200 krad dose and the optical conectors between the scintillator and the PMT with doses from 100 to 300 krad. We measured the radiation damage on the materials by comparing the pre- and post-irradiation optical transparency as a function of time.

  19. Radiation-hard ceramic Resistive Plate Chambers for forward TOF and T0 systems

    NASA Astrophysics Data System (ADS)

    Akindinov, A.; Dreyer, J.; Fan, X.; Kämpfer, B.; Kiselev, S.; Kotte, R.; Garcia, A. Laso; Malkevich, D.; Naumann, L.; Nedosekin, A.; Plotnikov, V.; Stach, D.; Sultanov, R.; Voloshin, K.

    2017-02-01

    Resistive Plate Chambers with ceramic electrodes are the main candidates for a use in precise multi-channel timing systems operating in high-radiation conditions. We report the latest R&D results on these detectors aimed to meet the requirements of the forward T0 counter at the CBM experiment. RPC design, gas mixture, limits on the bulk resistivity of ceramic electrodes, efficiency, time resolution, counting rate capabilities and ageing test results are presented.

  20. Radiation hardness test of the Philips Digital Photon Counter with proton beam

    NASA Astrophysics Data System (ADS)

    Barnyakov, M. Yu.; Frach, T.; Kononov, S. A.; Kuyanov, I. A.; Prisekin, V. G.

    2016-07-01

    The Philips Digital Photon Counter (DPC) is a silicon photomultiplier combining Geiger-mode avalanche photodiodes (G-APD) and dedicated readout electronics in the same chip. The DPC is a promising photon sensor for future RICH detectors. A known issue of G-APD is its sensitivity to radiation damage. Two DPC sensors were tested using 800 MeV/c protons. An increase of dark counting rate with proton fluence up to 4 ·1011cm-2 has been measured.

  1. Low-mass, intrinsically-hard high-temperature radiator. Final report, Phase I

    SciTech Connect

    1990-06-15

    Thermacore, Inc. of Lancaster, Pennsylvania has completed a Phase I SBIR program to investigate the use of layered ceramic/metal composites in the design of low-mass hardened radiators for space heat rejection systems. The program is being monitored by the Los Alamos National Laboratory (LANL) for the Strategic Defense Initiative Organization (SDIO). This effort evaluated the use of layered composites as a material to form thin-walled, vacuum leaktight heat pipes. The heat pipes would be incorporated into a large heat pipe radiator for waste heat rejection from a space nuclear power source. This approach forms an attractive alternative to metal or silicon-carbon fiber reinforced metal heat pipes by offering a combination of low mass and improved fabricability. Titanium has been shown to have a yield strength too low at 875{degrees}K to be a useful radiator material. A silicon carbide fiber reinforced titanium material appears to have sufficient strength at 875{degrees}K. but cannot be welded due to the continuous fibers, and the preferred heat pipe working fluid (potassium) has been demonstrated to be incompatible with silicon carbide at 875{degrees}K. Moreover, titanium does not appear to be acceptable for radiators subjected to anticipated laser threats. As part of this effort, Thermacore performed composite material evaluations on combinations of refractory metals and ceramic powders. Layered composite tube samples with wall thicknesses as thin as 0.012 inches were developed. Fabrication experiments were performed that demonstrated the weldability of layered composites. Two titanium/titanium diboride composite tubes were successfully fabricated into potassium heat pipes and operated at temperatures in excess of 700{degrees}C. A hybrid composite tube was also fabricated into a potassium heat pipe. The tube was composed of alternating layers of niobium-1% zirconium foil and layers of a mixture of titanium powder and titanium diboride powder.

  2. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    DOE PAGES

    Makita, M.; Karvinen, P.; Zhu, D.; ...

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy ofmore » >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.« less

  3. Densification of sol-gel silica thin films induced by hard X-rays generated by synchrotron radiation.

    PubMed

    Innocenzi, Plinio; Malfatti, Luca; Kidchob, Tongjit; Costacurta, Stefano; Falcaro, Paolo; Marmiroli, Benedetta; Cacho-Nerin, Fernando; Amenitsch, Heinz

    2011-03-01

    In this article the effects induced by exposure of sol-gel thin films to hard X-rays have been studied. Thin films of silica and hybrid organic-inorganic silica have been prepared via dip-coating and the materials were exposed immediately after preparation to an intense source of light of several keV generated by a synchrotron source. The samples were exposed to increasing doses and the effects of the radiation have been evaluated by Fourier transform infrared spectroscopy, spectroscopic ellipsometry and atomic force microscopy. The X-ray beam induces a significant densification on the silica films without producing any degradation such as cracks, flaws or delamination at the interface. The densification is accompanied by a decrease in thickness and an increase in refractive index both in the pure silica and in the hybrid films. The effect on the hybrid material is to induce densification through reaction of silanol groups but also removal of the organic groups, which are covalently bonded to silicon via Si-C bonds. At the highest exposure dose the removal of the organic groups is complete and the film becomes pure silica. Hard X-rays can be used as an efficient and direct writing tool to pattern coating layers of different types of compositions.

  4. A confident source of hard X-rays: radiation from a tokamak applicable for runaway electrons diagnosis.

    PubMed

    Kafi, M; Salar Elahi, A; Ghoranneviss, M; Ghanbari, M R; Salem, M K

    2016-09-01

    In a tokamak with a toroidal electric field, electrons that exceed the critical velocity are freely accelerated and can reach very high energies. These so-called `runaway electrons' can cause severe damage to the vacuum vessel and are a dangerous source of hard X-rays. Here the effect of toroidal electric and magnetic field changes on the characteristics of runaway electrons is reported. A possible technique for runaways diagnosis is the detection of hard X-ray radiation; for this purpose, a scintillator (NaI) was used. Because of the high loop voltage at the beginning of a plasma, this investigation was carried out on toroidal electric field changes in the first 5 ms interval from the beginning of the plasma. In addition, the toroidal magnetic field was monitored for the whole discharge time. The results indicate that with increasing toroidal electric field the mean energy of runaway electrons rises, and also an increase in the toroidal magnetic field can result in a decrease in intensity of magnetohydrodynamic oscillations which means that for both conditions more of these high-energy electrons will be generated.

  5. Effects of gamma radiation on hard dental tissues of albino rats using scanning electron microscope - Part 1

    NASA Astrophysics Data System (ADS)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; Maghraby, Ahmed; El-Zainy, Medhat

    2011-12-01

    In the present study, 40 adult male albino rats were used to study the effect of gamma radiation on the hard dental tissues (enamel surface, dentinal tubules and the cementum surface). The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy gamma doses. The effects of irradiated hard dental tissues samples were investigated using a scanning electron microscope. For doses up to 0.5 Gy, there was no evidence of the existence of cracks on the enamel surface. With 1 Gy irradiation dose, cracks were clearly observed with localized erosive areas. At 2 Gy irradiation dose, the enamel showed morphological alterations as disturbed prismatic and interprismatic areas. An increase in dentinal tubules diameter and a contemporary inter-tubular dentine volume decrease were observed with higher irradiation dose. Concerning cementum, low doses,<0.5 Gy, showed surface irregularities and with increase in the irradiation dose to≥1 Gy, noticeable surface irregularities and erosive areas with decrease in Sharpey's fiber sites were observed. These observations could shed light on the hazardous effects of irradiation fields to the functioning of the human teeth.

  6. MNOS/SOS radiation hardness performance and reliability study. Interim report Aug 79-Aug 80

    SciTech Connect

    Hampton, F.L.; Cricchi, J.R.

    1982-05-01

    In this investigation the endurance-retention characteristics of fast-write MNOS memory structure, and radiation tolerance of metal-gate dual-dielectric and polysilicon-gate all-oxide devices have been evaluated. Writing and clearing speed have been studied with respect to the NH3:SiH4 ratio (APCVD), and NH3:SiC12H2 ratio (LPCVD). The films deposited with a low NH3:SiC12 ratios could be written and cleared with shorter pulse widths; however, a degradation in retention was observed. An improvement in the endurance retention product of a drain source protected transistor structure has been realized by oxidizing the memory nitride followed by an H2 anneal immediately after deposition. The film was deposited with a LPCVD reactor at 750 deg with a NH3:SiC12H2 ratio of 9:1. Oxidation was performed in steam at 900 C, as was the subsequent H2 anneal. The effect of total dose radiation was found to be more severe for a positive bias. The all oxide polysilicon gate transistor structures were observed to be relatively soft, however results from capacitor structures shows promise in developing a radiation tolerant polysilicon-gate all-oxide gate structure.

  7. Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

    NASA Astrophysics Data System (ADS)

    Currás, Esteban; Fernández, Marcos; Gallrapp, Christian; Gray, Lindsey; Mannelli, Marcello; Meridiani, Paolo; Moll, Michael; Nourbakhsh, Shervin; Scharf, Christian; Silva, Pedro; Steinbrueck, Georg; Fatis, Tommaso Tabarelli de; Vila, Iván

    2017-02-01

    The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb-1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ∼1.0 cm2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb-1, the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 1016 neq/cm2. A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×1016 neq/cm2 is presented. The properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

  8. Linear response theory for annealing of radiation damage in semiconductor devices

    NASA Technical Reports Server (NTRS)

    Litovchenko, Vitaly

    1988-01-01

    A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

  9. Change in the thermionic work function of semiconductor powders exposed to electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Bourasseau, S.; Martin, J. R.; Juillet, F.; Teichner, S. J.

    1977-01-01

    The variations of the thermoelectronic work function of titanium dioxide, submitted to an ultraviolet or visible and infrared radiation, in the presence of oxygen, are studied by the vibrating condenser method. It is shown that during the ultraviolet irradiation, a desorption of a first species of oxygen simultaneously occurs with the adsorption of a second species of oxygen and that this phenomenon is found for any structure of TiO2 (anatase or rutile) any texture, oxygen pressure, radiation intensity, and nature of introduced dopes.

  10. Radiation hardness measurements of new permanent magnet materials for high-intensity linac applications

    SciTech Connect

    Barlow, D.B.; Kraus, R.H.; Borden, M.J.

    1998-12-31

    This is the final report of a two-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The radiation resistance of samples of high-strength samarium cobalt permanent-magnet material has been studied. Samples of commercially available material were obtained from four different manufacturers. The remanent field of the samples was measured before and after the samples were irradiated with neutrons produced at the beam stop of the Los Alamos Neutron Science Center (LANSCE) proton accelerator.

  11. Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hicks, K. A.; Jennings, G. A.; Lin, Y.-S.; Pina, C. A.; Sayah, H. R.; Zamani, N.

    1989-01-01

    Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

  12. Investigation of temperature dependence of semiconductor detectors used in medicine for radiation measurements

    NASA Astrophysics Data System (ADS)

    Ozleyis Altunkok, Simay; Tuncel, Nina; Ucar, Nazim

    2015-07-01

    In this study, the temperature dependence of p-type semiconductor diodes that are a part of in-vivo dosimetry system was assessed in Co-60 photon energy. The collimator and gantry angle on zero degree, SSD 100 cm, field size 20x20 cm2 was selected. The IBA EDP-5, EDP-10 and EDP-20 diode types that included in this study have different thickness of build-up material so the depth of measurements at water equivalent phantom by FC65-p ion chamber was selected at 5, 10 and 20 mm. Along the process the room and phantom temperature was measured and recorded (19°C). The special water filled PMMA phantom was used for diode set-up on its surface and a thermometer for determine phantom temperature was employed. Each type of diodes irradiated separately for one minute and the signal to dose sensitivity and calibration was performed at room temperature (19°C) by OmniPro-InViDos software with DPD-12 electrometer. Examination was repeated from 33°C to 20°C temperatures. The temperature correction factors were found from slope of the linear drawings for each diode types. The obtained correction factor for EDP-5 and EDP-10 was 0.29 %°C/cGy and 0.30 %°C/cGy respectively, that higher than recommended factor (%0.25°C/cGy). While the more fluctuation for EDP-20 was realized.

  13. Radiation hardness and timing studies of a monolithic TowerJazz pixel design for the new ATLAS Inner Tracker

    NASA Astrophysics Data System (ADS)

    Riegel, C.; Backhaus, M.; Van Hoorne, J. W.; Kugathasan, T.; Musa, L.; Pernegger, H.; Riedler, P.; Schaefer, D.; Snoeys, W.; Wagner, W.

    2017-01-01

    A part of the upcoming HL-LHC upgrade of the ATLAS Detector is the construction of a new Inner Tracker. This upgrade opens new possibilities, but also presents challenges in terms of occupancy and radiation tolerance. For the pixel detector inside the inner tracker, hybrid modules containing passive silicon sensors and connected readout chips are presently used, but require expensive assembly techniques like fine-pitch bump bonding. Silicon devices fabricated in standard commercial CMOS technologies, which include part or all of the readout chain, are also investigated offering a reduced cost as they are cheaper per unit area than traditional silicon detectors. If they contain the full readout chain, as for a fully monolithic approach, there is no need for the expensive flip-chip assembly, resulting in a further cost reduction and material savings. In the outer pixel layers of the ATLAS Inner Tracker, the pixel sensors must withstand non-ionising energy losses of up to 1015 n/cm2 and offer a timing resolution of 25 ns or less. This paper presents test results obtained on a monolithic test chip, the TowerJazz 180nm Investigator, towards these specifications. The presented program of radiation hardness and timing studies has been launched to investigate this technology's potential for the new ATLAS Inner Tracker.

  14. Variation in the thermionic work function of semiconductor powders exposed to electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Bourasseau, S.; Martin, J. R.; Juillet, F.; Teichner, S. J.

    1977-01-01

    The study of the variation of thermoelectronic work function potential of TiO2 in the presence of isobutane shows that this gas is not adsorbed on this solid, in either the presence or the absence of ultraviolet radiation. These results, as well as those obtained in a previous work, lead to the mechanism of the photo-oxidation of isobutane at room temperature, in which excited atomic oxygen is the active species.

  15. Sensitive semiconductor detectors of terahertz radiation for spaceborne applications based on Pb1-xSnxTe(In)

    NASA Astrophysics Data System (ADS)

    Dolzhenko, D. E.; Nicorici, A. V.; Ryabova, L. I.; Khokhlov, D. R.

    2012-09-01

    Doping of the lead telluride and related alloys with the group III impurities results in appearance of the unique physical features of a material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We present the physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including the possibilities of a fast quenching of the persistent photoresponse, construction of the focal-plane array, new readout technique, and others. The advantages of infrared photodetecting systems based on the group III-doped IV-VI in comparison with the modern photodetectors are summarized. The spectra of the persistent photoresponse have not been measured so far because of the difficulties with screening the background radiation. We report on the observation of strong persistent photoconductivity in Pb0.75Sn0.25Te(In) under the action of monochromatic submillimeter radiation at wavelengths of 176 and 241 microns. The sample temperature was 4.2 K, the background radiation was completely screened out. The sample was initially in the semiinsulating state providing dark resistance of more than 100 GOhm. The responsivity of the photodetector is by several orders of magnitude higher than in the state of the art Ge(Ga). The red cut-off wavelength exceeds the upper limit of 220 microns observed so far for the quantum photodetectors in the uniaxially stressed Ge(Ga). It is possible that the photoconductivity spectrum of Pb1-xSnxTe(In)covers all the submillimeter wavelength range.

  16. Total-dose radiation effects data for semiconductor devices, volume 3

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1982-01-01

    Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

  17. Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.

    1985-01-01

    The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

  18. Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

    NASA Astrophysics Data System (ADS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Pezzullo, G.; Seif El Nasr-Storey, S.; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-01-01

    Particle detectors for future experiments at the HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed ``building-block'' modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented.

  19. Radiation hardness study of Silicon Detectors for the CMS High Granularity Calorimeter (HGCAL)

    NASA Astrophysics Data System (ADS)

    Currás, E.; Mannelli, M.; Moll, M.; Nourbakhsh, S.; Steinbrueck, G.; Vila, I.

    2017-02-01

    The high luminosity LHC (HL-LHC or Phase-II) is expected to increase the instantaneous luminosity of the LHC by a factor of about five, delivering 0~25 fb ‑1 per year between 2025 and 2035. Under these conditions the performance degradation of detectors due to integrated radiation dose/fluence will need to be addressed. The CMS collaboration is planning to upgrade many detector components, including the forward calorimeters. The replacement for the existing endcap preshower, electromagnetic and hadronic calorimeters is called the High Granularity Calorimeter (HGCAL) and it will be realized as a sampling calorimeter, including 40 layers of silicon detectors totalling 600 m2. The sensors will be realized as pad detectors with cell size between 0.5 and 1.0 cm2 and an active thickness between 100 μm and 300 μm depending on their location in the endcaps. The thinner sensors will be used in the highest radiation environment. For an integrated luminosity of 3000 fb ‑1, the electromagnetic calorimeter will have to sustain a maximum integrated dose of 1.5 MGy and neutron fluences of 1.0×1016 neq/cm2. A tolerance study after neutron irradiation of 300 μm, 200 μm, 100 μm and 50 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×1016 neq/cm2 is presented. The main properties of these diodes have been studied before and after irradiation: leakage current, capacitance, charge collection efficiency with laser and sensitivity to minimum ionizing particles with radioactive source (90Sr). The results show a good performance even after the most extreme irradiation.

  20. A Radiation Hard Multi-Channel Digitizer ASIC for Operation in the Harsh Jovian Environment

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Aslam, S.; Akturk, A.; Quilligan, G.

    2011-01-01

    ultimately impact the surface of Europa after the mission is completed. The current JEO mission concept includes a range of instruments on the payload, to monitor dynamic phenomena (such as Io's volcanoes and Jupiters atmosphere), map the Jovian magnetosphere and its interactions with the Galilean satellites, and characterize water oceans beneath the ice shells of Europa and Ganymede. The payload includes a low mass (3.7 Kg) and low power (< 5 W) Thermal Instrument (TI) concept for measuring possible warm thermal anomalies on Europa s cold surface caused by recent (< 10,000 years) eruptive activity. Regions of anomalously high heat flow will be identified by thermal mapping using a nadir pointing, push-broom filter radiometer that provides far-IR imagery in two broad band spectral wavelength regions, 8-20 m and 20-100 m, for surface temperature measurements with better than a 2 K accuracy and a spatial resolution of 250 m/pixel obtained from a 100 Km orbit. The temperature accuracy permits a search for elevated temperatures when combined with albedo information. The spatial resolution is sufficient to resolve Europa's larger cracks and ridge axial valleys. In order to accomplish the thermal mapping, the TI uses sensitive thermopile arrays that are readout by a custom designed low-noise Multi-Channel Digitizer (MCD) ASIC that resides very close to the thermopile linear array outputs. Both the thermopile array and the MCD ASIC will need to show full functionality within the harsh Jovian radiation environment, operating at cryogenic temperatures, typically 150 K to 170 K. In the following, a radiation mitigation strategy together with a low risk Radiation-Hardened-By-Design (RHBD) methodology using commercial foundry processes is given for the design and manufacture of a MCD ASIC that will meet this challenge.

  1. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Mellado, B.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Solvyanov, O.

    2015-06-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs but a breakdown in the light transfer between base and fluor dopants is observed. For doses of 8 MGy to 80 MGy, structural damage leads to hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss as dose is increased.

  2. Spaceflight Ka-Band High-Rate Radiation-Hard Modulator

    NASA Technical Reports Server (NTRS)

    Jaso, Jeffery M.

    2011-01-01

    A document discusses the creation of a Ka-band modulator developed specifically for the NASA/GSFC Solar Dynamics Observatory (SDO). This flight design consists of a high-bandwidth, Quadriphase Shift Keying (QPSK) vector modulator with radiation-hardened, high-rate driver circuitry that receives I and Q channel data. The radiationhard design enables SDO fs Ka-band communications downlink system to transmit 130 Mbps (300 Msps after data encoding) of science instrument data to the ground system continuously throughout the mission fs minimum life of five years. The low error vector magnitude (EVM) of the modulator lowers the implementation loss of the transmitter in which it is used, thereby increasing the overall communication system link margin. The modulator comprises a component within the SDO transmitter, and meets the following specifications over a 0 to 40 C operational temperature range: QPSK/OQPSK modulator, 300-Msps symbol rate, 26.5-GHz center frequency, error vector magnitude less than or equal to 10 percent rms, and compliance with the NTIA (National Telecommunications and Information Administration) spectral mask.

  3. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Sekonya, K.; Solvyanov, O.

    2015-10-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy and light yield analysis whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs and light loss can be attributed to a breakdown in the light transfer between base and fluor dopants. For doses of 8 MGy to 80 MGy, structural damage leads to possible hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss and light yield loss with increasing dose.

  4. Time dependence of FEL-induced surface photovoltage on semiconductor interfaces measured with synchroton radiation photoemission spectroscopy

    SciTech Connect

    Marsi, M.; Delboulbe, A.; Garzella, D.

    1995-12-31

    During the last year, the first surface science experiments simultaneously using a Free Electron Laser (FEL) and Synchrotron Radiation (SR) have been performed on SuperACO at LURE (Orsay, France). These {open_quotes}two color{close_quotes} experiments studied the surface photovoltage (SPV) induced on semiconductor surfaces and interfaces by the SuperACO FEL, a storage ring FEL delivering 350 nm photons which am naturally synchronized with the SR; the SPV was measured by synchrotron radiation core-level photoemission spectroscopy on the high-resolution SU3 undulator beamline. We will describe the experimental setup, which allowed us to convey the FEL light onto the samples sitting in the SU3 experimental station by means of a series of mirrors, and show the results we obtained for prototypical systems such as Ag/GaAs(110) and Si(111) 2 x 1. The dependence of the SPV was studied in function of various parameters, changing sample doping and photon flux; but our efforts were mainly devoted to studying its dependence on the time delay between the FEL pump and the SR probe. On SuperACO, such delay can be varied between 1 and 120 ns, the limits being given by the time duration of a SR pulse and by the interval between two consecutive positron bunches, respectively. The results show a clear temporal dependence of the amount of SPV on cleaved Si surfaces, where as the Ag/GaAs(110) does not show any difference on the ns time scale. We will discuss these results in terms of the role of surface recombination in the dynamics of the photoinduced electron-hole pairs. These studies follow the evolution of the density of electrostatic charge at surfaces and interfaces on a nanosecond time scale, and might pave the way for a new series of experiments: for example, one might explore what are the physical mechanisms limiting the time response of Schottky diodes.

  5. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    NASA Astrophysics Data System (ADS)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R. H.; Plaisier, J. R.; Antonelli, M.

    2017-03-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In0.75Ga0.25As/In0.75Al0.25As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  6. Novel Surface Preparation and Contacts for CdZnTe Nuclear Radiation Detectors Using Patterned Films of Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Burger, Arnold; Groza, Michael; Conway, Adam; Payne, Steve

    2013-04-01

    The semiconductor Cadmium Zinc Telluride (CZT) has emerged as the material of choice for room temperature detection of X-rays and gamma-rays. The detectors will cover the energy range from 30 keV to several MeV, and will achieve excellent 662 keV energy resolution. The development of high resolution gamma ray detectors based on CZT is dependent on low electronic noise levels. One common source of noise is the surface leakage current, which limits the performance of advanced readout schemes such as the coplanar grid and pixelated architectures with steering grids. Excessive bulk leakage current can result from one of several surface effects: leaky native oxides, unsatisfied bonds, and surface damage. We propose to fabricate and test oriented [111] CZT crystals with thicknesses up to 1.5 cm with an innovative detection technique based on co-planar or other electron only transport designs using plasma processing, thin film sputtering, chemical passivation and wet etching techniques. Compared to conventional pixel detectors, the proposed contact configuration needs lower power consumption and a lower cost. The detector design can be used for building very low-cost handheld radiation detection devices.

  7. Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

    NASA Technical Reports Server (NTRS)

    Leopold, Daniel J.

    2002-01-01

    The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

  8. Radiation effects on microstructure and hardness of a titanium aluminide alloy irradiated by helium ions at room and elevated temperatures

    NASA Astrophysics Data System (ADS)

    Wei, Tao; Zhu, Hanliang; Ionescu, Mihail; Dayal, Pranesh; Davis, Joel; Carr, David; Harrison, Robert; Edwards, Lyndon

    2015-04-01

    A 45XD TiAl alloy possessing a lamellar microstructure was irradiated using 5 MeV helium ions to a fluence of 5 × 1021 ion m-2 (5000 appm) with a dose of about 1 dpa (displacements per atom). A uniform helium ion stopping damage region about 17 μm deep from the target surface was achieved by applying an energy degrading wheel. Radiation damage defects including helium-vacancy clusters and small helium bubbles were found in the microstructure of the samples irradiated at room temperature. With increasing irradiation temperature to 300 °C and 500 °C helium bubbles were clearly observed in both the α2 and γ phases of the irradiated microstructure. By means of nanoindentation significant irradiation hardening was measured. For the samples irradiated at room temperature the hardness increased from 5.6 GPa to 8.5 GPa and the irradiation-hardening effect reduced to approximately 8.0 GPa for the samples irradiated at 300 °C and 500 °C.

  9. Radiation hardness of AlxGa1-xN photodetectors exposed to Extreme UltraViolet (EUV) light beam

    NASA Astrophysics Data System (ADS)

    Malinowski, Pawel E.; John, Joachim; Barkusky, Frank; Duboz, Jean Yves; Lorenz, Anne; Cheng, Kai; Derluyn, Joff; Germain, Marianne; De Moor, Piet; Minoglou, Kyriaki; Bayer, Armin; Mann, Klaus; Hochedez, Jean-Francois; Giordanengo, Boris; Borghs, Gustaaf; Mertens, Robert

    2009-05-01

    We report on the results of fabrication and optoelectrical characterization of Gallium Nitride (GaN) based Extreme UltraViolet (EUV) photodetectors. Our devices were Schottky photodiodes with a finger-shaped rectifying contact, allowing better penetration of light into the active region. GaN layers were epitaxially grown on Silicon (111) by Metal- Organic-Chemical Vapor Deposition (MOCVD). Spectral responsivity measurements in the Near UltraViolet (NUV) wavelength range (200-400 nm) were performed to verify the solar blindness of the photodetectors. After that the devices were exposed to the EUV focused beam of 13.5 nm wavelength using table-top EUV setup. Radiation hardness was tested up to a dose of 3.3Â.1019 photons/cm2. Stability of the quantum efficiency was compared to the one measured in the same way for a commercially available silicon based photodiode. Superior behavior of GaN devices was observed at the wavelength of 13.5 nm.

  10. Proposal to produce novel, transparent radiation hard low refractive index polymers. Final report, 1 October-31 December 1993

    SciTech Connect

    Schuman, P.D.; Harmon, J.

    1994-02-09

    Low and high molecular weight polymers of heptafluorobutyl methacrylate, HFBM, were prepared for commercial evaluation by Bicron, an optical fiber manufacturer. Polymers were evaluated as low refractive index fiber cladding materials. Test results of Low MW polymer solutions gave excellent results. Higher MW polymers were prepared for cladding by melt co-extrusion. Corning Glass Corp, also expressed an interest in these cladding materials. These results appear to be sufficiently unique that a search has been initiated to determine patentability of the soluble fluorocarbon acrylate, methacrylate and copolymer compositions for cladding use. This research resulted in identifying a radiation hard, low refractive index polymer, poly(heptafluorobutyl methacrylate), P(HFBM) as the best candidate for a novel cladding material. P(HFBM) has a refractive index of 1.387. When used to clad a styrene core, the theoretical light propagation efficiency is 50% greater than that of styrene fiber core clad with PMMA, a common commercial cladding material. These polymers will be the only commercial fluorocarbon acrylic cladding polymers available to U.S. manufacturers. Japanese optical fiber manufacturers produce fluorocarbon clad fibers but their polymers are not available to U.S. manufacturers. These polymers can fill an urgent need in the optical fiber market.

  11. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  12. GaSe and GaTe anisotropic layered semiconductors for radiation detectors

    NASA Astrophysics Data System (ADS)

    Mandal, Krishna C.; Choi, Michael; Kang, Sung Hoon; Rauh, R. David; Wei, Jiuan; Zhang, Hui; Zheng, Lili; Cui, Y.; Groza, M.; Burger, A.

    2007-09-01

    High quality detector grade GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). A state-of-the-art computer model, MASTRAPP, is used to model heat and mass transfer in the Bridgman growth system and to predict the stress distribution in the as-grown crystals. The model accounts for heat transfer in the multiphase system, convection in the melt, and interface dynamics. The crystals harvested from ingots of 8-10 cm length and 2.5 cm diameter, have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, low temperature photoluminescence (PL), atomic force microscopy (AFM), and optical absorption/transmission measurements. Single element devices up to 1 cm2 in area have been fabricated from the crystals and tested as radiation detectors by measuring current-voltage (I-V) characteristics and pulse height spectra using 241Am source. The crystals have shown high promise as nuclear detectors with their high dark resistivity (>=10 9 Ω .cm), good charge transport properties (μτ e ~ 1.4x10 -5 cm2/V and μτ h ~ 1.5x10 -5 cm2/V), and relatively good energy resolution (~4% energy resolution at 60 keV). Details of numerical modeling and simulation, detector fabrication, and testing using a 241Am energy source (60 keV) is presented in this paper.

  13. Beta Backscatter Measures the Hardness of Rubber

    NASA Technical Reports Server (NTRS)

    Morrissey, E. T.; Roje, F. N.

    1986-01-01

    Nondestructive testing method determines hardness, on Shore scale, of room-temperature-vulcanizing silicone rubber. Measures backscattered beta particles; backscattered radiation count directly proportional to Shore hardness. Test set calibrated with specimen, Shore hardness known from mechanical durometer test. Specimen of unknown hardness tested, and radiation count recorded. Count compared with known sample to find Shore hardness of unknown.

  14. Silicon PM Radiation Hardness

    SciTech Connect

    Rohlf, James

    2016-08-25

    Detailed measurements have been made of 9 mm2 SiPMs from Hamamatsu (MPPC) and Zecotek (MAPD) after room temperature annealing after exposure to fluences of 1012 to 1013 cm-2. The data was used to complete the final ADR report.

  15. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  16. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  17. Performance prospects for the CMS electromagnetic calorimeter barrel avalanche photodiodes for LHC phase I and phase II: Radiation hardness and longevity

    NASA Astrophysics Data System (ADS)

    Addesa, F.; Cavallari, F.

    2015-07-01

    The electromagnetic calorimeter of the Compact Muon Solenoid (CMS) experiment at the LHC is a hermetic, fine-grained, homogeneous calorimeter, comprising 75,848 lead tungstate scintillating crystals. Avalanche photodiodes produced by Hamamatsu are used as sensors for the electromagnetic barrel calorimeter. These devices were tested for radiation hardness assuming an integrated luminosity of 500 fb-1, which corresponds to a neutron fluence of 2- 4 ×1013 n /cm2, depending on the detector location. Beginning in 2022, a new phase of the LHC is foreseen to exploit the full potential of the accelerator, which will deliver 3000 fb-1 of integrated luminosity. Irradiation studies up to a fluence of 1.5 ×1014 n /cm2 have been performed to qualify the avalanche photodiodes for radiation hardness. We present measurements of gain, quantum efficiency and noise, and discuss the implications for the CMS electromagnetic barrel calorimeter performance.

  18. Semiconductor heterostructure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold John (Inventor); Woodall, Jerry MacPherson (Inventor)

    1978-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  19. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  20. Hard tooth tissue removal by short and long Er:YAG or Er,Cr:YSGG mid-infrared laser radiation

    NASA Astrophysics Data System (ADS)

    Jelínková, H.; Dostálová, T.; Remeš, M.; Šulc, J.; Němec, M.; Fibrich, M.

    2017-02-01

    Hard dental tissue removal by laser radiation is an alternative treatment to conventional dental-drilling procedures. The advantages of this therapy are fast and localized treatment of hard dental tissue and painlessness. The most effective systems for those purposes are Er-lasers generating radiation at wavelengths of around 3 μm. The aim of this study was qualitative and quantitative examination of human dentin and ivory tissue removal by pulsed free-running (FR) and Q-switched (QSW) Er:YAG and Er,Cr:YSGG laser radiations. From the obtained results it follows that generally Er:YAG laser has lower threshold for the tissue removal in both FR and QSW regimes. Furthermore, the FR Er:YAG and Er,Cr:YSGG radiation can be effective for both dentin and ivory ablation and can prepare smooth cavities without side effects. The QSW regime is useful preferably for precise ablation of a starting tooth defect and for the part of the tooth very close to the gum. This regime is excellent for micro-preparation or for tooth treatment of children.

  1. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  2. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  3. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    SciTech Connect

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application.

  4. Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Nomura, Kenji; Kamiya, Toshio; Ikenaga, Eiji; Yanagi, Hiroshi; Kobayashi, Keisuke; Hosono, Hideo

    2011-04-01

    In a previous work, we examined subgap states in highly doped amorphous In-Ga-Zn-O (a-IGZO) films by hard x-ray photoelectron spectroscopy (HX-PES) and found they had subgap electronic states above the valence band maximum (VBM) with the densities > 5 × 1020 cm-3 and just below the Fermi level with the densities > 5 × 1019 cm-3 [K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, Appl. Phys. Lett. 92, 202117 (2008)]; however, their electron densities (Ne > 3 × 1019 cm-3) are rather high and not compatible with rational properties required for active channel layers in thin-film transistors (TFTs). In this work, we report the effects of Ne and thermal annealing on the subgap states in order to provide the data useful for actual TFTs. It was found that the low-Ne a-IGZO films had extra subgap states above VBM similar to the previous report, but their densities were as small as ˜2.0 × 1020 cm-3 for the highly resistive, wet-annealed a-IGZO films. Angle-dependent HX-PES revealed that the subgap states above VBM concentrate in the surface region. The O 1s peak indicated that the wet annealing suppressed the generation of subgap states by terminating these states with -OH bonds. The subgap states below EF were observed commonly in all the samples including ZnO, crystalline (c-) IGZO and a-IGZO. It is concluded that these states below EF are neither related to the disordered structures of a-IGZO nor to their TFT characteristics. It is considered that these states are related to the metastable states created by the high-energy photons in vacuum.

  5. Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Carteglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnessy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. . Inst. for Particle Physics); Ellison, J.A. ); Ferguson, P. ); Giubellino

    1990-01-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

  6. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    SciTech Connect

    James, Ralph

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  7. X-ray emission from cataclysmic variables with accretion disks. I - Hard X-rays. II - EUV/soft X-ray radiation

    NASA Technical Reports Server (NTRS)

    Patterson, J.; Raymond, J. C.

    1985-01-01

    Theoretical models explaining the hard-X-ray, soft-X-ray, and EUV emission of accretion-disk cataclysmic variables in terms of the disk boundary layer (DBL) are developed on the basis of a survey of the published observational data. The data are compared with model predictions in graphs for systems with high or low (greater than or less than 10-Pg/s) accretion rates. Good agreement is obtained both at low accretion rates, where an optically thin rarefied hot (Te = 10 to the 8th K) DBL radiates most of its energy as hard X-rays, and at high accretion rates, where an optically thick 100,000-K DBL radiates most of its energy in the EUV and as soft X-rays. Detailed analysis of the old nova V603 Aql suggests that previous models predicting more detections of soft-X-ray/EUV emissions from thick-DBL objects (Ferland et al., 1982) used inappropriate dwarf masses, interstellar column densities, or classical-nova space densities.

  8. On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

    SciTech Connect

    Kolpakov, D. A. Zvonkov, B. N.; Nekorkin, S. M.; Dikareva, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.

    2015-11-15

    A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

  9. Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes

    SciTech Connect

    Schropp, A.; Hoppe, R.; Patommel, J.; Samberg, D.; Seiboth, F.; Stephan, S.; Schroer, C. G.; Wellenreuther, G.; Falkenberg, G.

    2012-06-18

    We demonstrate x-ray scanning coherent diffraction microscopy (ptychography) with 10 nm spatial resolution, clearly exceeding the resolution limits of conventional hard x-ray microscopy. The spatial resolution in a ptychogram is shown to depend on the shape (structure factor) of a feature and can vary for different features in the object. In addition, the resolution and contrast are shown to increase with increasing coherent fluence. For an optimal ptychographic x-ray microscope, this implies a source with highest possible brilliance and an x-ray optic with a large numerical aperture to generate the optimal probe beam.

  10. Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

    NASA Technical Reports Server (NTRS)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-01-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  11. Bread-Board Testing of the Radiation Hard Electron Monitor (RADEM) being developed for the ESA JUICE Mission

    NASA Astrophysics Data System (ADS)

    Mrigakshi, Alankrita; Hajdas, Wojtek; Marcinkowski, Radoslaw; Xiao, Hualin; Goncalves, Patricia; Pinto, Marco; Pinto, Costa; Marques, Arlindo; Meier, Dirk

    2016-04-01

    The RADEM instrument will serve as the radiation monitor for the JUICE spacecraft. It will characterize the highly dynamic radiation environment of the Jovian system by measuring the energy spectra of energetic electrons and protons up to 40 MeV and 250 MeV, respectively. It will also determine the directionality of 0.3-10 MeV electrons. Further goals include the detection of heavy ions, and the determination of the corresponding LET spectra and dose rates. Here, the tests of the Electron and Proton Telescopes, and the Directionality Detector of the RADEM Bread-Board model are described. The objective of these tests is to validate RADEM design and physical concept applied therein. The tests were performed at various irradiation facilities at the Paul Scherrer Institute (PSI) where energy ranges relevant for space applications can be covered (electrons: ≤100 MeV and protons: ≤230 MeV). The measured values are also compared with GEANT4 Monte-Carlo Simulation results.

  12. Development of a compact radiation-hardened low-noise front-end readout ASIC for CZT-based hard X-ray imager

    NASA Astrophysics Data System (ADS)

    Gao, W.; Gan, B.; Li, X.; Wei, T.; Gao, D.; Hu, Y.

    2015-04-01

    In this paper, we present the development and performances of a radiation-hardened front-end readout application-specific integrated circuit (ASIC) dedicated to CZT detectors for a hard X-ray imager in space applications. The readout channel consists of a charge sensitive amplifier (CSA), a CR-RC shaper, a fast shaper, a discriminator and a driving buffer. With the additional digital filtering, the readout channel can achieve very low noise performances and low power dissipation. An eight-channel prototype ASIC is designed and fabricated in 0.35 μm CMOS process. The energy range of the detected X-rays is evaluated as 1.45 keV to 281 keV. The gain is larger than 100 mV/fC. The equivalent noise charge (ENC) of the ASIC is 53 e- at zero farad plus 10 e- per picofarad. The power dissipation is less than 4.4 mW/channel. Through the measurement with a CZT detector, the energy resolution is less than 3.45 keV (FWHM) under the irradiation of the radioactive source 241Am. The radiation effect experiments indicate that the proposed ASIC can resist the total ionization dose (TID) irradiation of higher than 200 krad (Si).

  13. A system-level model for high-speed, radiation-hard optical links in HEP experiments based on silicon Mach-Zehnder modulators

    NASA Astrophysics Data System (ADS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-12-01

    Silicon Mach-Zehnder modulators have been shown to be relatively insensitive to displacement damage beyond a 1-MeV-equivalent neutron fluence of 3ṡ1016n/cm2. Recent investigations on optimized device designs have also led to a high resistance against total ionizing dose levels of above 1 MGy. Such devices could potentially replace electrical and/or optical links close to the particle interaction points in future high energy physics experiments. Since they require an external continuous-wave light source, radiation-hard optical links based on silicon Mach-Zehnder modulators need to have a different system design when compared to existing directly modulated laser-based optical links. 10 Gb/s eye diagrams of irradiated Mach-Zehnder modulators were measured. The outcomes demonstrate the suitability for using these components in harsh radiation environments. A proposal for the implementation of silicon Mach-Zehnder modulators in CERN's particle detectors was developed and a model to calculate the system performance is presented. The optical power budget and the electrical power dissipation of the proposed link is compared to that of the upcoming Versatile Link system that will be installed in 2018.

  14. Physical principles of the amplification of electromagnetic radiation due to negative electron masses in a semiconductor superlattice

    NASA Astrophysics Data System (ADS)

    Shorokhov, A. V.; Pyataev, M. A.; Khvastunov, N. N.; Hyart, T.; Kusmartsev, F. V.; Alekseev, K. N.

    2015-02-01

    In a superlattice placed in crossed static electric and magnetic fields, under certain conditions, the inversion of electron population can appear at which the average energy of electrons is above the middle of the mini-band and the effective mass of the electron is negative. This is the implementation of the negative effective mass amplifier and generator (NEMAG) in the superlattice. It can result in the amplification and generation of terahertz radiation even in the absence of negative differential conductivity.

  15. Submicrometre beams from a hard X-ray waveguide at a third-generation synchrotron radiation source.

    PubMed

    Cedola, A; Lagomarsino, S; Di Fonzo, S; Jark, W; Riekel, C; Deschamps, P

    1998-01-01

    The use of an X-ray waveguide for scattering experiments at an undulator of a third-generation synchrotron radiation source is discussed. The performance with a perfect crystal monochromator, multilayer monochromator and focusing mirror is explored. A maximum flux of 8 x 109 photons s(-1) at lambda = 0.083 nm was obtained for a 0.15 (V) x 600 (H) micron(2) beam at the exit of the waveguide with a multilayer monochromator. The combination of an Si (111) monochromator and ellipsoidal mirror resulted in a flux of approximately 10(9) photons s(-1) but with a horizontal compression of the beam to approximately 30 micron. The use of the waveguide in diffraction experiments is addressed.

  16. Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration

    NASA Astrophysics Data System (ADS)

    Lindström, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M. M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G. M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T. J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M. J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B. K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J. M.; Ratoff, P. N.; Richter, R. H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A. I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E. R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wüstenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

    2001-06-01

    This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindström et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.

  17. Computer monitoring of the thermal effects induced by Er:YAG laser radiation during preparation of the hard tooth tissue

    NASA Astrophysics Data System (ADS)

    Dostalova, Tatjana; Krejsa, Otakar; Jelinkova, Helena; Hamal, Karel; Prochazka, Ivan; Bakule, Pavel

    1993-12-01

    We are presenting the results of the thermal changes of enamel, dentin and pulp temperature monitoring in extracted human teeth subjected to a pulsed Er:YAG laser radiation. We made a series of experiments irradiating the tooth using the pulsed Er:YAG laser and monitoring simultaneously the temperature of various parts of the tooth. The temperature was measured by the bead thermistor either in contact with the tooth surface or built in the pulp chamber. In the former experiments it was demonstrated, that the uncooled preparation can cause irreversible changes of the pulp. In the second part of the experiments the teeth have been cooled by flowing water. During the laser preparation of the enamel and the dentin the temperature did not increase more than 2 degree(s)C. In the moment of dentin perforation and hence laser irradiation of the pulp, the pulp temperature increased rapidly. The opening of the pulp coincides with the rapid temperature increase. These studies verified the feasibility of the pulsed Erbium:YAG laser use in stomatology.

  18. Constant-pitch microprism-array optical device for beam condensers in hard x-ray synchrotron radiation beamlines

    NASA Astrophysics Data System (ADS)

    Kagoshima, Y.; Takano, H.; Takeda, S.

    2013-06-01

    A constant-pitch microprism-array optical device has been developed. It is a modified version of the previously reported quasi-Fresnel lens [Kagoshima et al., Appl. Phys. Lett. 101, 163102 (2012)]. The modification eases the fabrication of the lens, although it degrades some of the focusing performance. It consists of twenty 50-μm-wide right-angle microprisms, whose slope angles gradually increase to 67.8° at the outer side. By inclining the array, the aspect ratio of the microprisms becomes large enough for X-ray use. The effective slope angle can be enlarged to 86.4° at an inclination angle of 80.5°. A 10-keV synchrotron beam with a size of 680 μm (V) × 660 μm (H) was two-dimensionally condensed to 130 μm (V) × 380 μm (H) with a photon flux density gain of ˜3. We also show that the microprism array is suitable for practical use below the critical radiation dose rate.

  19. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  20. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOEpatents

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  1. Investigation on the long-term radiation hardness of low resistivity starting silicon materials for RT silicon detectors in high energy physics

    SciTech Connect

    Li, Z.

    1994-02-01

    Relatively low resistivity (200 to 1000 {Omega}-cm) starting silicon materials have been studied in the search of room temperature neutron radiation-hard silicon detectors. It has been found that, moderate resistivity (300-700 {Omega}-cm) silicon detectors, after being irradiated to 5.0 {times} 10{sup 13} to 2.0 {times} 10{sup 14} n/cm{sup 2}, are extremely stable in terms of the detector full depletion voltage (V{sub d}) or the net effective concentration of ionized space charges (N{sub eff} ---- there is little ``reverse annealing`` of N{sub eff} at RT and elevated temperatures as compared with large reverse annealing observed for high resistivity silicon detectors. Detectors with starting resistivity of 300-700 {Omega}-cm have been found to be stable, during the equivalent of one year RT anneal that would reach the saturation of the first stage of reverse anneal, within then N{sub eff} window of {vert_bar}N{sub eff}{vert_bar}{le} 2.5 {times} 10{sup 12} cm{sup {minus}3} (V{sub d} = 180 V for d = 300 {mu}m) in a working range of 5.0 {times} 10{sup 13} to 1.5 {times} 10{sup 14} n/cm{sup 2}, or a net neutron radiation tolerance of 1.0 {times} 10{sup 14} n/cm{sup 2}. The observed effects are in very good agreement with an early proposed model, which predicted among others, that there might be an off set between the reverse annealing effect and the partial annealing of the P-V centers that leads to the partial recovery of the shallow impurity donors.

  2. Uranium hohlraum with an ultrathin uranium-nitride coating layer for low hard x-ray emission and high radiation temperature

    NASA Astrophysics Data System (ADS)

    Guo, Liang; Ding, Yongkun; Xing, Pifeng; Li, Sanwei; Kuang, Longyu; Li, Zhichao; Yi, Taimin; Ren, Guoli; Wu, Zeqing; Jing, Longfei; Zhang, Wenhai; Zhan, Xiayu; Yang, Dong; Jiang, Baibin; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen; Li, Yongsheng; Liu, Jie; Huo, Wenyi; Lan, Ke

    2015-11-01

    An ultrathin layer of uranium nitrides (UN) has been coated on the inner surface of depleted uranium hohlraum (DUH), which has been proven by our experiment to prevent the oxidization of uranium (U) effectively. Comparative experiments between the novel depleted uranium hohlraum and pure golden (Au) hohlraum are implemented on an SGIII-prototype laser facility. Under a laser intensity of 6 × 1014 W cm-2, we observe that the hard x-ray (hν \\gt 1.8 keV) fraction of the uranium hohlraum decreases by 61% and the peak intensity of the total x-ray flux (0.1 keV˜5.0 keV) increases by 5%. Radiation hydrodynamic code LARED is used to interpret the above observations. Our result for the first time indicates the advantages of the UN-coated DUH in generating a uniform x-ray source with a quasi-Planckian spectrum, which should have important applications in high energy density physics.

  3. LDQ10: a compact ultra low-power radiation-hard 4 × 10 Gb/s driver array

    NASA Astrophysics Data System (ADS)

    Zeng, Z.; Zhang, T.; Wang, G.; Gui, P.; Kulis, S.; Moreira, P.

    2017-02-01

    A High-speed and low-power VCSEL driver is an important component of the Versatile Link for the high-luminosity LHC (HL-LHC) experiments. A compact low-power radiation-hard 4 × 10 Gb/s VCSEL driver array (LDQ10) has been developed in 65 nm CMOS technology. Each channel in LDQ10 can provide a modulation current up to 8 mA and bias current up to 12 mA. Edge pre-emphasis is employed to compensate for the bandwidth limitations due to parasitic and the turn-on delay of VCSEL devices. LDQ10 occupies a chip area of 1900 μm × 1700 μm and consumes 130 mW power for typical current settings. The modulation amplitude degrades less than 5% after 300 Mrad total ionizing dose. LDQ10 can be directly wire-bonded to the VCSEL array and it is a suitable candidate for the Versatile Link.

  4. Semiconductor detectors for the ATLAS inner tracker

    NASA Astrophysics Data System (ADS)

    Morgan, Debbie

    1998-02-01

    The ATLAS experiment currently under design for the CERN LHC contains an inner detector which tracks charged particles from the LHC beam-pipe to the electromagnetic calorimeter system. The main task is to reconstruct event tracks with high efficiency, to assist electron, photon and muon recognition and to reconstruct signatures of short-lived particles. Track densities at the LHC will be extremely large, and hence high precision measurements are required. This will be achieved using semiconductor tracking detectors, making use of silicon microstrip and pixel technology. For detectors closest to the beam interaction point the radiation levels are extremely high-up to 10 MRad. At the time of the ATLAS technical proposal, it was envisaged that gallium arsenide detectors could withstand such an environment. However, it has since become clear that GaAs is not as radiation hard as first expected, and that detectors would not perform sufficiently for the required time. In addition, progress on silicon detectors has indicated that they are able to withstand harsh radiation environments, and hence further work on silicon detectors now continues.

  5. The optical pumping of alkali atoms using coherent radiation from semi-conductor injection lasers and incoherent radiation from resonance lamps

    NASA Technical Reports Server (NTRS)

    Singh, G.

    1973-01-01

    An experimental study for creating population differences in the ground states of alkali atoms (Cesium 133) is presented. Studies made on GaAs-junction lasers and the achievement of population inversions among the hyperfine levels in the ground state of Cs 133 by optically pumping it with radiation from a GaAs diode laser. Laser output was used to monitor the populations in the ground state hyperfine levels as well as to perform the hyperfine pumping. A GaAs laser operated at about 77 K was used to scan the 8521 A line of Cs 133. Experiments were performed both with neon-filled and with paraflint-coated cells containing the cesium vapor. Investigations were also made for the development of the triple resonance coherent pulse technique and for the detection of microwave induced hyperfine trasistions by destroying the phase relationships produced by a radio frequency pulse. A pulsed cesium resonance lamp developed, and the lamp showed clean and reproducible switching characteristics.

  6. [{sup 18}F]fluoromisonidazole and a New PET System With Semiconductor Detectors and a Depth of Interaction System for Intensity Modulated Radiation Therapy for Nasopharyngeal Cancer

    SciTech Connect

    Yasuda, Koichi; Onimaru, Rikiya; Okamoto, Shozo; Shiga, Tohru; Katoh, Norio; Tsuchiya, Kazuhiko; Suzuki, Ryusuke; Takeuchi, Wataru; Kuge, Yuji; Tamaki, Nagara; Shirato, Hiroki

    2013-01-01

    Purpose: The impact of a new type of positron emission tomography (New PET) with semiconductor detectors using {sup 18}F-labeled fluoromisonidazole (FMISO)-guided intensity modulated radiation therapy (IMRT) was compared with a state-of-the-art PET/computed tomography (PET/CT) system in nasopharyngeal cancer (NPC) patients. Methods and Materials: Twenty-four patients with non-NPC malignant tumors (control group) and 16 patients with NPC were subjected to FMISO-PET. The threshold of the tumor-to-muscle (T/M) ratio in each PET scan was calculated. The hypoxic volume within the gross tumor volume (GTVh) was determined using each PET ({sub NewPET}GTVh and {sub PET/CT}GTVh, respectively). Dose escalation IMRT plans prescribing 84 Gy to each GTVh were carried out. Results: The threshold of the T/M ratio was 1.35 for New PET and 1.23 for PET/CT. The mean volume of {sub NewPET}GTVh was significantly smaller than that of {sub PET/CT}GTVh (1.5 {+-} 1.6 cc vs 4.7 {+-} 4.6 cc, respectively; P=.0020). The dose escalation IMRT plans using New PET were superior in dose distribution to those using PET/CT. Dose escalation was possible in all 10 New PET-guided plans but not in 1 PET/CT-guided plan, because the threshold dose to the brainstem was exceeded. Conclusions: New PET was found to be useful for accurate dose escalation in FMISO-guided IMRT for patients with NPC.

  7. Radiation Hard Sensors for Surveillance.

    DTIC Science & Technology

    1988-03-11

    Dark Matter ", Proc. Workshop, Ringberg Castle, Tegerusee May 12-13, 1987 ed. K. Pretzl D.et al., Springer Verlay 1987 D. Perret-Gallix ,ibid 4) A...Low Temperature Detectors for *-., Neutrino/ Dark Matter ", Ringberg Castle, Tegernsee, May 1987. In the following this paper is quoted as UBC, 1987...advantage of the SQUID sensitivity. Multichannel readout capability is presently being buil.I. 30 DISIAIIBUIIU’..AVAILANI..TY Of AeStRAC? 3

  8. A radiation hard vacuum switch

    DOEpatents

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  9. Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Palai, Ratnakar

    2016-10-01

    Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

  10. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  11. Optical properties of semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Son, Joong-Kon

    Thanks to the difference in energy gap between two semiconductors and to their different indices of refraction, semiconductor heterostructures can confine electrons as well as photons. This property makes it possible to build semiconductor-based optical resonators (microcavities) with a radiation dipole (a quantum well) in its midst to investigate the coupling between the optical modes of the microcavity with the exciton modes of the quantum well. Such an interaction, besides its intrinsic interest, is relevant to vertically-emitting semiconductor lasers, based on the quantum well- microcavity system. In this thesis, we will present experimental evidence of temperature and electric-field dependent exciton-cavity coupling in GaAs-GaAlAs microcavities.

  12. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  13. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  14. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  15. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  16. Radiation effects in power converters: Design of a radiation hardened integrated switching DC/DC converter

    NASA Astrophysics Data System (ADS)

    Adell, Philippe

    When electronic devices are used in space and military systems, they may be exposed to various types of radiation, including photons, electrons, protons, neutrons, and heavy ions. The effects of radiation on the semiconductor devices within the systems range from gradual degradation to catastrophic failure. In order to design and produce reliable systems for space or military applications, it is necessary to understand the device-level effects of radiation and develop appropriate strategies for reducing system susceptibility. This research focuses on understanding radiation effects in power converters for space and military applications. We show that power converters are very sensitive to radiation (total-dose, single event effects and displacement damage) and that their radiation response is dependent on input bias conditions and load conditions. We compared the radiation hardness of various power converter topologies using experiments and simulations. Evaluation of these designs under different modes of operation is demonstrated to be critical for determining radiation hardness. We emphasize the correlation between radiation effects and the role of the dynamic response of these topologies. For instance, total dose exposure has been found to degrade loop gain and affect regulation in some converters. We propose several radiation-hardening solutions to improve the radiation response of these designs. For instance, we demonstrate the design of a digitally controlled boost converter suitable for space applications based on an SRAM FPGA. A design hardening solution has been developed and successfully applied through VHDL simulations and experiments to assure the continuous operation of the converter in the presence of SEES (more precisely SEFIs). This research led to the design of a digitally controlled radiation hardened integrated switching buck converter. The proposed design is suitable for micro-satellite applications and is based on a high-voltage/CMOS process

  17. CONTROL OF LASER RADIATION PARAMETERS: Instability of stationary lasing and self-starting mode locking in external-cavity semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Smetanin, Igor V.; Vasil'ev, Petr P.

    2009-01-01

    Parameters of external-cavity semiconductor lasers, when the stationary lasing becomes unstable, were analysed within the framework of a theoretical model of self-starting mode locking. In this case, a train of ultrashort pulses can be generated due to intrinsic nonlinearities of the laser medium. A decisive role of the transverse optical field nonuniformity, pump rate, and gain spectral bandwidth in the development of the instability of stationary lasing was demonstrated.

  18. CONTROL OF LASER RADIATION PARAMETERS: Study of the spectral width of intermode beats and optical spectrum of an actively mode-locked three-mirror semiconductor laser

    NASA Astrophysics Data System (ADS)

    Zakharyash, Valerii F.; Kashirsky, Aleksandr V.; Klementyev, Vasilii M.; Kuznetsov, Sergei A.; Pivtsov, V. S.

    2005-09-01

    Various oscillation regimes of an actively mode-locked semiconductor laser are studied experimentally. Two types of regimes are found in which the minimal spectral width (~3.5 kHz) of intermode beats is achieved. The width of the optical spectrum of modes is studied as a function of their locking and the feedback coefficients. The maximum width of the spectrum is ~3.7 THz.

  19. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    SciTech Connect

    Dr. R. K. Pandey, Cudworth Endowed Professor Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666

    2008-11-24

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by

  20. High resolution scintillation detector with semiconductor readout

    DOEpatents

    Levin, Craig S.; Hoffman, Edward J.

    2000-01-01

    A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

  1. Radiation

    NASA Video Gallery

    Outside the protective cocoon of Earth's atmosphere, the universe is full of harmful radiation. Astronauts who live and work in space are exposed not only to ultraviolet rays but also to space radi...

  2. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  3. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  4. Frequency modulation of semiconductor disk laser pulses

    SciTech Connect

    Zolotovskii, I O; Korobko, D A; Okhotnikov, O G

    2015-07-31

    A numerical model is constructed for a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM), and the effect that the phase modulation caused by gain and absorption saturation in the semiconductor has on pulse generation is examined. The results demonstrate that, in a laser cavity with sufficient second-order dispersion, alternating-sign frequency modulation of pulses can be compensated for. We also examine a model for tuning the dispersion in the cavity of a disk laser using a Gires–Tournois interferometer with limited thirdorder dispersion. (control of radiation parameters)

  5. Crystal Growth and Mechanical Properties of Semiconductor Alloys

    DTIC Science & Technology

    1989-11-01

    OFFICE SYMBOL 9. PROCUREMENT INSTRUMENT IDENTIFICATION NUMBER ORGANIZATIONi (If applicable) AFOSR AFOSR 86-0158 Bc. ADDRESS (City, State, and ZIP Code...creep in HgTe and other semiconductors of relatively low melting temper- atures. -Hardness and elastic modulus will be measured using a Nanoindenter . X...techniques; hardness measurements on thin films (< 2 jim) using a Nanoindenter , and hardness measurements on bulk samples that we have prepared. In

  6. THz Radiation Generation via Laser Plasma Interaction Experiments

    NASA Astrophysics Data System (ADS)

    Yugami, Noboru; Higashiguchi, Takeshi

    2008-12-01

    Recently radiation generation from the interaction between laser and plasma is studied. Terahertz radiation from photo-conductive antenna which is based on semiconductor technology is widely used, The power is in the order of nano-watt level so that it is hard to use for application. On the other hand, terahertz radiation from laser plasma interaction is much higher than that of semiconductor technology. In our experiments, we have studied by use DARC (dc to ac radiation converter) mechanism by using YAG laser with nano-second pulse duration. DARC is novel radiation source using the interaction between laser-created ionization front and static electric field. The frequency of radiation is determined by both plasma density of ionization front and the geometry of DARC structure. We observed radiation pulse of frequency of 1.2 THz and pulse duration of 2 ps with ZnSe crystal as media detected by EO (electro-optics) sampling technique. Note from Publisher: This article contains the abstract only.

  7. Voyager electronic parts radiation program, volume 1

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Martin, K. E.; Price, W. E.

    1977-01-01

    The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.

  8. Review of using gallium nitride for ionizing radiation detection

    SciTech Connect

    Wang, Jinghui; Mulligan, Padhraic; Cao, Lei R.; Brillson, Leonard

    2015-09-15

    With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

  9. Review of using gallium nitride for ionizing radiation detection

    NASA Astrophysics Data System (ADS)

    Wang, Jinghui; Mulligan, Padhraic; Brillson, Leonard; Cao, Lei R.

    2015-09-01

    With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

  10. Quantitative analysis of incipient mineral loss in hard tissues

    NASA Astrophysics Data System (ADS)

    Matvienko, Anna; Mandelis, Andreas; Hellen, Adam; Jeon, Raymond; Abrams, Stephen; Amaechi, Bennett

    2009-02-01

    A coupled diffuse-photon-density-wave and thermal-wave theoretical model was developed to describe the biothermophotonic phenomena in multi-layered hard tissue structures. Photothermal Radiometry was applied as a safe, non-destructive, and highly sensitive tool for the detection of early tooth enamel demineralization to test the theory. Extracted human tooth was treated sequentially with an artificial demineralization gel to simulate controlled mineral loss in the enamel. The experimental setup included a semiconductor laser (659 nm, 120 mW) as the source of the photothermal signal. Modulated laser light generated infrared blackbody radiation from teeth upon absorption and nonradiative energy conversion. The infrared flux emitted by the treated region of the tooth surface and sub-surface was monitored with an infrared detector, both before and after treatment. Frequency scans with a laser beam size of 3 mm were performed in order to guarantee one-dimensionality of the photothermal field. TMR images showed clear differences between sound and demineralized enamel, however this technique is destructive. Dental radiographs did not indicate any changes. The photothermal signal showed clear change even after 1 min of gel treatment. As a result of the fittings, thermal and optical properties of sound and demineralized enamel were obtained, which allowed for quantitative differentiation of healthy and non-healthy regions. In conclusion, the developed model was shown to be a promising tool for non-invasive quantitative analysis of early demineralization of hard tissues.

  11. THE EFFECT OF CORONAL RADIATION ON A RESIDUAL INNER DISK IN THE LOW/HARD SPECTRAL STATE OF BLACK HOLE X-RAY BINARY SYSTEMS

    SciTech Connect

    Liu, B. F.; Taam, Ronald E. E-mail: r-taam@northwestern.edu

    2011-01-01

    Thermal conduction between a cool accretion disk and a hot inner corona can result in either evaporation of the disk or condensation of the hot corona. At low mass accretion rates, evaporation dominates and can completely remove the inner disk. At higher mass accretion rates, condensation becomes more efficient in the very inner regions, so that part of the mass accretes via a weak (initially formed) inner disk which is separated from the outer disk by a fully evaporated region at mid radii. At still higher mass accretion rates, condensation dominates everywhere, so there is a continuous cool disk extending to the innermost stable circular orbit. We extend these calculations by including the effect of irradiation by the hot corona on the disk structure. The flux which is not reflected is reprocessed in the disk, adding to the intrinsic thermal emission from gravitational energy release. This increases the seed photons for Compton cooling of the hot corona, enhancing condensation of the hot flow, and reinforcing the residual inner disk rather than evaporating it. Our calculations confirm that a residual inner disk can coexist with a hard, coronally dominated spectrum over the range of 0.006< m-dot <0.016 (for {alpha} = 0.2). This provides an explanation for the weak thermal component seen recently in the low/hard state of black hole X-ray binary systems.

  12. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications.

    PubMed

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

  13. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  14. The study of pinch regimes based on radiation-enhanced compression and anomalous resistivity phenomena and their effects on hard x-ray emission in a Mather type dense plasma focus device (SABALAN2)

    SciTech Connect

    Piriaei, D.; Javadi, S.; Ghoranneviss, M.; Mahabadi, T. D.; Saw, S. H.; Lee, S.

    2015-12-15

    In this study, by using argon and nitrogen as the filling gases in a Mather type dense plasma focus device at different values of pressure and charging voltage, two different kinds of pinch regimes were observed for each of the gases. The physics of the pinch regimes could be explained by using the two versions of the Lee's computational model which predicted each of the scenarios and clarified their differences between the two gases according to the radiation-enhanced compression and, additionally, predicted the pinch regimes through the anomalous resistivity effect during the pinch time. This was accomplished through the fitting process (simulation) on the current signal. Moreover, the characteristic amplitude and time scales of the anomalous resistances were obtained. The correlations between the features of the plasma current dip and the emitted hard x-ray pulses were observed. The starting time, intensity, duration, and the multiple or single feature of the emitted hard x-ray strongly correlated to the same respective features of the current dip.

  15. A comparative study of the radiation hardness of plastic scintillators for the upgrade of the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Liao, S.; Erasmus, R.; Jivan, H.; Pelwan, C.; Peters, G.; Sideras-Haddad, E.

    2015-10-01

    The influence of radiation on the light transmittance of plastic scintillators was studied experimentally. The high optical transmittance property of plastic scintillators makes them essential in the effective functioning of the Tile calorimeter of the ATLAS detector at CERN. This significant role played by the scintillators makes this research imperative in the movement towards the upgrade of the tile calorimeter. The radiation damage of polyvinyl toluene (PVT) based plastic scintillators was studied, namely, EJ-200, EJ-208 and EJ-260, all manufactured and provided to us by ELJEN technology. In addition, in order to compare to scintillator brands actually in use at the ATLAS detector currently, two polystyrene (PS) based scintillators and an additional PVT based scintillator were also scrutinized in this study, namely, Dubna, Protvino and Bicron, respectively. All the samples were irradiated using a 6 MeV proton beam at different doses at iThemba LABS Gauteng. The radiation process was planned and mimicked by doing simulations using a SRIM program. In addition, transmission spectra for the irradiated and unirradiated samples of each grade were obtained, observed and analyzed.

  16. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  17. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  18. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  19. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  20. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    NASA Technical Reports Server (NTRS)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  1. Impact of Scaled Technology on Radiation Testing and Hardening

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2005-01-01

    This presentation gives a brief overview of some of the radiation challenges facing emerging scaled digital technologies with implications on using consumer grade electronics and next generation hardening schemes. Commercial semiconductor manufacturers are recognizing some of these issues as issues for terrestrial performance. Looking at means of dealing with soft errors. The thinned oxide has indicated improved TID tolerance of commercial products hardened by "serendipity" which does not guarantee hardness or say if the trend will continue. This presentation also focuses one reliability implications of thinned oxides.

  2. Photoelectrosynthesis at semiconductor electrodes

    SciTech Connect

    Nozik, A. J.

    1980-12-01

    The general principles of photoelectrochemistry and photoelectrosynthesis are reviewed and some new developments in photoelectrosynthesis are discussed. Topics include energetics of semiconductor-electrolyte interfaces(band-edge unpinning); hot carrier injection at illuminated semiconductor-electrolyte junctions; derivatized semiconductor electrodes; particulate photoelectrochemical systems; layered compounds and other new materials; and dye sensitization. (WHK)

  3. Squeezing of phonoritons in semiconductors

    NASA Astrophysics Data System (ADS)

    Huong, N. Q.; Hau, N. N.; Birman, J. L.

    2007-12-01

    If a semiconductor sample is illuminated by hight-intensity electro-magnetic radiation near the resonance, the occupation number of polaritons in the same mode is large and the interaction between polaritons and phonons become very important. This interaction leads to the formation of a new kind of elementary excitation called phonoriton, which actually is a coherent superposition of excitons, photons, and longitudinal acoustic phonons under Brillouin scattering of an intense polariton. The phonoritons have been studied theoretically and experimentally and have been found in Cu2O. In this work we discuss the squeezing of phonoritons inside semiconductors from a theoretical point of view. We found the squeezed states, or so called 'low-noise' states- the states of reduced quantum noise with reducing effect of vacuum fluctuation, for phonoritons. It shows that the phonoritons are intrinsically squeezed. From our results we also have the possibility to tune the squeeze amplitude, what is important both theoretically and experimentally.

  4. Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

    SciTech Connect

    Sambuco Salomone, L. Kasulin, A.; Carbonetto, S. H.; Garcia-Inza, M. A.; Redin, E. G.; Berbeglia, F.; Lipovetzky, J.; Faigón, A.; Campabadal, F.

    2014-11-07

    Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

  5. A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures.

    PubMed

    Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

    2013-08-13

    Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

  6. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

    PubMed Central

    Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

    2013-01-01

    Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

  7. Rad-Hard Silicon Detectors

    NASA Astrophysics Data System (ADS)

    Giorgi, Marco

    2005-06-01

    For the next generation of High Energy Physics (HEP) Experiments silicon microstrip detectors working in harsh radiation environments with excellent performances are necessary. The irradiation causes bulk and surface damages that modify the electrical properties of the detector. Solutions like AC coupled strips, overhanging metal contact, <100> crystal lattice orientation, low resistivity n-bulk and Oxygenated substrate are studied for rad-hard detectors. The paper presents an outlook of these technologies.

  8. Planarization of topography with spin-on carbon hard mask

    NASA Astrophysics Data System (ADS)

    Noya, Go; Hama, Yusuke; Ishii, Maki; Nakasugi, Shigemasa; Kudo, Takanori; Padmanaban, Munirathna

    2016-03-01

    Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterning technology is used and planarization of topography become more important and challenging ever before. In order to develop next generation SOC, one of focuses is planarization of topography. SOC with different concepts for improved planarization and the influence of thermal flow temperature, crosslink, film shrinkage, baking conditions on planarization and filling performance are described in this paper.

  9. A High Through-put Combinatorial Growth Technique for Semiconductor Thin Film Search

    NASA Astrophysics Data System (ADS)

    Ma, Z. X.; Hao, H. Y.; Xiao, P.; Oehlerking, L. J.; Liu, D. F.; Zhang, X. J.; Yu, K.-M.; Walukiewicz, W.; Mao, S. S.; Yu, P. Y.

    2011-12-01

    Conventional semiconductor material growth technique is costly and time-consuming. Here we developed a new method to growth semiconductor thin films using high through-put combinatorial technique. In this way, we have successfully fabricated tens of semiconductor libraries with high crystallinity and high product of μτ for the purpose of radiation detection.

  10. ESD evaluation of radiation-hardened, high-reliability CMOS and MNOS ICs

    NASA Astrophysics Data System (ADS)

    Soden, J. M.; Stewart, H. D.; Pastorek, R. A.

    Standard human-body-equivalent circuit electrostatic discharge (ESD) tests were performed on the inputs of high-reliability, radiation-hardened integrated circuits (ICs) designed with seven different technologies. Metal and silicon gate complementary metal oxide semiconductors (CMOS) and metal-nitride-oxide-semiconductor (MNOS) ICs with design rules ranging from 10 microns down to 2 microns were evaluated. The ESD hardness of these ICs ranged from 1 kV to greater than 9 kV. The low-range ESD hardness ICs were fabricated with a masking polysilicon ring that defined the input protection diodes. Tests on commercial equivalent ICs demonstrated that the ESD hardness of the radiation-hardened ICs was not significantly less than the ESD hardness of the commercial equivalent ICs. The failure modes and mechanisms of the ICs were evaluated. Most of the ICs that did not have the making polysilicon ring failed because of input to V sub DD or V sub SS shorts due to degraded protection diodes. ESD tests with the pulse applied between the package metal lid and the package pins were also performed. These lid tests produced permanent input damage, the same as occurred during tests with the pulse applied to the package input, but the damage occurred at lower voltages. ESD pulses with peak voltages as low as 250 volts produced arcs from the lid to the input bond wires, resulting in degraded inputs.

  11. Rad-Hard/HI-REL FPGA

    NASA Technical Reports Server (NTRS)

    Wang, Jih-Jong; Cronquist, Brian E.; McGowan, John E.; Katz, Richard B.

    1997-01-01

    The goals for a radiation hardened (RAD-HARD) and high reliability (HI-REL) field programmable gate array (FPGA) are described. The first qualified manufacturer list (QML) radiation hardened RH1280 and RH1020 were developed. The total radiation dose and single event effects observed on the antifuse FPGA RH1280 are reported on. Tradeoffs and the limitations in the single event upset hardening are discussed.

  12. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  13. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  14. Production of 35S for a Liquid Semiconductor Betavoltaic

    SciTech Connect

    Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

    2009-10-01

    The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

  15. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  16. Solid state radiative heat pump

    DOEpatents

    Berdahl, Paul H.

    1986-01-01

    A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

  17. Solid state radiative heat pump

    DOEpatents

    Berdahl, P.H.

    1984-09-28

    A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

  18. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    DOE PAGES

    Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; ...

    2016-02-08

    This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and themore » charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less

  19. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    SciTech Connect

    Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; Lopez, Javier Garicia; Jaksic, Milko; Raisanen, Jyrki; Siegele, Rainer; Simon, Aliz; Vizkelethy, Gyorgy

    2016-02-08

    This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  20. Refined Synthesis and Crystal Growth of Pb{sub 2}P{sub 2}Se{sub 6} for Hard Radiation Detectors.

    SciTech Connect

    Wang, Peng L.; Kostina, Svetlana S.; Meng, Fang; Kontsevoi, Oleg Y.; Liu, Zhifu; Chen, Pice; Peters, John A.; Hanson, Micah; He, Yihui; Chung, Duck Young; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G.

    2016-09-01

    The refined synthesis and optimized crystal growth of high quality Pb2P2Se6 single crystals are reported. Improved experimental procedures were implemented to reduce the oxygen contamination and improve the stoichiometry of the single crystal samples. The impact of oxygen contamination and the nature of the stoichiometry deviation in the Pb2P2Se6 system were studied by first-principles density functional theory (DFT) electronic structure calculations as well as experimental methods. The DFT calculations indicated that the presence of interstitial oxygen atoms (O-int) leads to the formation of a deep level located near the middle of the gap, as well as a shallow acceptor level near the valence band maximum. In addition, total energy calculations of the heat of formation of Pb2P2Se6 suggest that the region of thermodynamic stability is sufficiently wide. By refining the preparative procedures, high quality Pb2P2Se6 single crystal samples were reproducibly obtained. These Pb2P2Se6 single crystals exhibited excellent optical transparency, electrical resistivity in the range of 10(11) Omega.cm, and a significant increase in photoconductivity. Infrared photoluminescence of the Pb2P2Se6 single crystals was observed over the temperature range of 15-75 K. Detectors fabricated from boules yielded a clear spectroscopic response to both Ag K alpha X-ray and Co-57 gamma-ray radiation. The electron and hole mobility lifetime product (mu tau) of the current Pb2P2Se6 detectors were estimated to be 3.1 x 10(-4) and 4.8 X 10(-5) cm(2)/V, respectively.

  1. New BNL 3D-Trench Electrode Si Detectors for Radiation Hard Detectors for sLHC and for X-ray Applications

    SciTech Connect

    Li Z.

    2011-05-11

    A new international-patent-pending (PCT/US2010/52887) detector type, named here as 3D-Trench electrode Si detectors, is proposed in this work. In this new 3D electrode configuration, one or both types of electrodes are etched as trenches deep into the Si (fully penetrating with SOI or supporting wafer, or non-fully penetrating into 50-90% of the thickness), instead of columns as in the conventional ('standard') 3D electrode Si detectors. With trench etched electrodes, the electric field in the new 3D electrode detectors are well defined without low or zero field regions. Except near both surfaces of the detector, the electric field in the concentric type 3D-Trench electrode Si detectors is nearly radial with little or no angular dependence in the circular and hexangular (concentric-type) pixel cell geometries. In the case of parallel plate 3D trench pixels, the field is nearly linear (like the planar 2D electrode detectors), with simple and well-defined boundary conditions. Since each pixel cell in a 3D-Trench electrode detector is isolated from others by highly doped trenches, it is an electrically independent cell. Therefore, an alternative name 'Independent Coaxial Detector Array', or ICDA, is assigned to an array of 3D-Trench electrode detectors. The electric field in the detector can be reduced by a factor of nearly 10 with an optimal 3D-Trench configuration where the junction is on the surrounding trench side. The full depletion voltage in this optimal configuration can be up to 7 times less than that of a conventional 3D detector, and even a factor of two less than that of a 2D planar detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detector. In the case of non-fully penetrating trench electrodes, the processing is true one-sided with backside being unprocessed. The charge loss due to the dead space associated with the trenches is insignificant as compared to that due to radiation-induced trapping in sLHC environment

  2. Impurity gettering in semiconductors

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  3. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  4. 75 FR 5804 - In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-02-04

    ... COMMISSION In the Matter of: Certain Semiconductor Integrated Circuits and Products Containing Same; Notice... importation, and sale within the United States after importation of certain semiconductor integrated circuits... infringement certain LSI integrated circuits, as well as certain Seagate hard disk drives that contain...

  5. Coherent spectroscopy of semiconductors.

    PubMed

    Cundiff, Steven T

    2008-03-31

    The coherent optical response of semiconductors has been the subject of substantial research over the last couple of decades. The interest has been motivated by unique aspects of the interaction between light and semiconductors that are revealed by coherent techniques. The ability to probe the dynamics of charge carriers has been a significant driver. This paper presents a review of selected results in coherent optical spectroscopy of semiconductors.

  6. Semiconductor microcavity lasers

    SciTech Connect

    Gourley, P.L.; Wendt, J.R.; Vawter, G.A.; Warren, M.E.; Brennan, T.M.; Hammons, B.E.

    1994-02-01

    New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3-dimensional architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures which have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

  7. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  8. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  9. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  10. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  11. Comparison of gamma-ray detectors: Scintillators, scintillating fibers, and semiconductors

    SciTech Connect

    Moss, C.E.

    1994-12-31

    New scintillators that have advantages relative to NaI(Tl) and BGO include GSO, LSO, YAP, and BaF{sub 2}. GSO, for example, is very radiation hard, and BaF{sub 2} is very fast. Scintillating fibers, which allow good spatial resolution and complex geometries, have been used extensively in high energy physics, but they can also be used at lower energies. Semiconductors such as germanium, silicon, CdTe, CdZnTe, and HgI{sub 2} can provide good resolution. The proliferation of types has made selection of a gamma-ray detector for a particular application difficult. The authors compare the different types and give examples of choices that have been made for laboratory experiments, portable instruments, and space applications.

  12. Chemistry of MOS-LSI radiation hardening

    NASA Technical Reports Server (NTRS)

    Grunthaner, P.

    1985-01-01

    The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

  13. Design considerations for a radiation hardened nonvolatile memory

    SciTech Connect

    Murray, J.R.

    1993-02-01

    The SA3823 64K EEPROM was developed for both weapon and space applications. The circuit was designed for fabrication in a CMOS/SNOS (Complementary Metal Oxide Semiconductor/Silicon Nitride Oxide Semiconductor) process since this process offers maximum radiation hardness for nonvolatile circuits. [1--6] Specific aspects of the circuit design were influenced by each of the radiation environments of concern. Total dose radiation effects were a factor in the memory cell and sense amplifier designs. Power distribution to the various latches was designed to tolerate the photocurrents generated during a transient radiation pulse. Single event upset (SEU) concerns were accounted for in the design of the latches and the control logic. The SA3823 is a 8K x 8 bit EEPROM which is partitioned into 128 pages with 64 bytes in each page. Data is programmed into the memory one page at a time. Writing data into the memory is a two step process: loading 64 bytes into the data-in latches and then programming the latched data into a page of the memory.

  14. Design considerations for a radiation hardened nonvolatile memory

    SciTech Connect

    Murray, J.R.

    1993-01-01

    The SA3823 64K EEPROM was developed for both weapon and space applications. The circuit was designed for fabrication in a CMOS/SNOS (Complementary Metal Oxide Semiconductor/Silicon Nitride Oxide Semiconductor) process since this process offers maximum radiation hardness for nonvolatile circuits. [1--6] Specific aspects of the circuit design were influenced by each of the radiation environments of concern. Total dose radiation effects were a factor in the memory cell and sense amplifier designs. Power distribution to the various latches was designed to tolerate the photocurrents generated during a transient radiation pulse. Single event upset (SEU) concerns were accounted for in the design of the latches and the control logic. The SA3823 is a 8K x 8 bit EEPROM which is partitioned into 128 pages with 64 bytes in each page. Data is programmed into the memory one page at a time. Writing data into the memory is a two step process: loading 64 bytes into the data-in latches and then programming the latched data into a page of the memory.

  15. Hard error generation by neutron irradiation

    SciTech Connect

    Browning, J.S.; Gover, J.E.; Wrobel, T.F.; Hass, K.J.; Nasby, R.D.; Simpson, R.L.; Posey, L.D.; Boos, R.E.; Block, R.C.

    1987-01-01

    We have observed that neutron-induced fission of uranium contaminants present in alumina ceramic package lids results in the release of fission fragments that can cause hard errors in metal nitride-oxidenonvolatile RAMs (MNOS NVRAMs). Hard error generation requires the simultaneous presence of (1) a fission fragment with a linear energy transfer (LET) greater than 20 MeV/mg/cm/sup 2/ moving at an angle of 30/sup 0/ or less from the electric field in the high-field, gate region of the memory transistor and (2) a WRITE or ERASE voltage on the oxide-nitride transistor gate. In reactor experiments, we observe these hard errors when a ceramic lid is used on both MNOS NVRAMs and polysilicon-nitride-oxide-semiconductor (SNOS) capacitors, but hard errors are not observed when a gold-plated kovar lid is used on the package containing these die. We have mapped the tracks of the fission fragments released from the ceramic lids with a mica track detector and used a Monte Carlo model of fission fragment transport through the ceramic lid to measure the concentration of uranium present in the lids. Our concentration measurements are in excellent agreement with others' measurements of uranium concentration in ceramic lids. Our Monte Carlo analyses also agree closely with our measurements of hard error probability in MNOS NVRAMs. 15 refs., 13 figs., 8 tabs.

  16. Molecular Semiconductors: An Introduction

    NASA Astrophysics Data System (ADS)

    de Mello, John; Halls, Jonathan James Michael

    2005-10-01

    Introducing the fundamental ideas and concepts behind organic semiconductors, this book provides a clear impression of the broad range of research activities currently underway. Aimed specifically at new entrant doctoral students from a wide variety of backgrounds, including chemistry, physics, electrical engineering and materials science, it also represents an ideal companion text to undergraduate courses in organic semiconductors.

  17. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  18. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen Edward; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  19. Hardness of irradiated poly(methyl methacrylate) at elevated temperatures

    SciTech Connect

    Lu, K.-P.; Lee, Sanboh; Cheng, Cheu Pyeng

    2001-08-15

    The decrease in hardness induced by gamma irradiation in poly(methyl methacrylate) (PMMA) has been investigated. The hardness is assumed to decrease linearly with the concentration of radiation-induced defects. Annealing at high temperatures induces defect annihilation as tracked by an increase in hardness. The annihilation follows first-order kinetics during isothermal annealing. The dependence of hardness on the reciprocal of the time constant satisfies the Arrhenius equation, and the corresponding activation energy of the kinetic process decreases with increasing dose. The hardness of postannealed PMMA decreases linearly with increasing dose. {copyright} 2001 American Institute of Physics.

  20. Method and apparatus for measuring electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Been, J. F. (Inventor)

    1973-01-01

    An apparatus and method are described in which the capacitance of a semiconductor junction subjected to an electromagnetic radiation field is utilized to indicate the intensity or strength of the radiation.

  1. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  2. Statistical Modeling for Radiation Hardness Assurance

    NASA Technical Reports Server (NTRS)

    Ladbury, Raymond L.

    2014-01-01

    We cover the models and statistics associated with single event effects (and total ionizing dose), why we need them, and how to use them: What models are used, what errors exist in real test data, and what the model allows us to say about the DUT will be discussed. In addition, how to use other sources of data such as historical, heritage, and similar part and how to apply experience, physics, and expert opinion to the analysis will be covered. Also included will be concepts of Bayesian statistics, data fitting, and bounding rates.

  3. Ordering of hard particles between hard walls

    NASA Astrophysics Data System (ADS)

    Chrzanowska, A.; Teixeira, P. I. C.; Ehrentraut, H.; Cleaver, D. J.

    2001-05-01

    The structure of a fluid of hard Gaussian overlap particles of elongation κ = 5, confined between two hard walls, has been calculated from density-functional theory and Monte Carlo simulations. By using the exact expression for the excluded volume kernel (Velasco E and Mederos L 1998 J. Chem. Phys. 109 2361) and solving the appropriate Euler-Lagrange equation entirely numerically, we have been able to extend our theoretical predictions into the nematic phase, which had up till now remained relatively unexplored due to the high computational cost. Simulation reveals a rich adsorption behaviour with increasing bulk density, which is described semi-quantitatively by the theory without any adjustable parameters.

  4. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  5. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  6. Semiconductor Solar Superabsorbers

    PubMed Central

    Yu, Yiling; Huang, Lujun; Cao, Linyou

    2014-01-01

    Understanding the maximal enhancement of solar absorption in semiconductor materials by light trapping promises the development of affordable solar cells. However, the conventional Lambertian limit is only valid for idealized material systems with weak absorption, and cannot hold for the typical semiconductor materials used in solar cells due to the substantial absorption of these materials. Herein we theoretically demonstrate the maximal solar absorption enhancement for semiconductor materials and elucidate the general design principle for light trapping structures to approach the theoretical maximum. By following the principles, we design a practical light trapping structure that can enable an ultrathin layer of semiconductor materials, for instance, 10 nm thick a-Si, absorb > 90% sunlight above the bandgap. The design has active materials with one order of magnitude less volume than any of the existing solar light trapping designs in literature. This work points towards the development of ultimate solar light trapping techniques. PMID:24531211

  7. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  8. Semiconductor radiation detector with internal gain

    DOEpatents

    Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

    2003-04-01

    An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

  9. Determination of band profiles in GaN films using hard X-ray photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Saito, Shinji; Yoshiki, Masahiko; Nunoue, Shinya; Sano, Nobuyuki

    2017-02-01

    We investigated band-profile control by introducing interlayers between a semiconductor and metal contact layers to improve the electrical properties of GaN-based semiconductor devices. We evaluated the electronic structure of the semiconductor surface and the metal/semiconductor interface by hard X-ray photoelectron spectroscopy. We also performed Monte Carlo simulations using the Boltzmann transport equation under the potential profile obtained using the Poisson equation. The band profile in the semiconductor substrate was then examined by comparing the energy spectra from the simulations with those from the experiments. We obtained good agreement between the two results. The present experimental and theoretical methods allow one to determine the band profile near the surface of a semiconductor as well as that in a metal interface. This approach may become a useful tool in the design and/or evaluation of processing conditions.

  10. Semiconductor Nanocrystal Photonics

    DTIC Science & Technology

    2005-08-31

    D. Krauss, C. B. Poitras, and M. Lipson, " Energy transfer between colloidal semiconductor quantum dots in an optical microcavity," (submitted, 2006...Phys. Lett. 82, 4032 (2003). J. J. Peterson and T. D. Krauss, "Fluorescence Spectroscopy of Single Lead Sulfide Quantum Dots ," Nano Lett. (in press...Guo, Xiaowei Teng, Hong Yang, Todd D. Krauss, Carl B. Poitras, and Michal Lipson, "Enhanced Energy Transfer between Colloidal Semiconductor Quantum

  11. SILICON CARBIDE FOR SEMICONDUCTORS

    DTIC Science & Technology

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  12. Hardness Tester for Polyur

    NASA Technical Reports Server (NTRS)

    Hauser, D. L.; Buras, D. F.; Corbin, J. M.

    1987-01-01

    Rubber-hardness tester modified for use on rigid polyurethane foam. Provides objective basis for evaluation of improvements in foam manufacturing and inspection. Typical acceptance criterion requires minimum hardness reading of 80 on modified tester. With adequate correlation tests, modified tester used to measure indirectly tensile and compressive strengths of foam.

  13. Session: Hard Rock Penetration

    SciTech Connect

    Tennyson, George P. Jr.; Dunn, James C.; Drumheller, Douglas S.; Glowka, David A.; Lysne, Peter

    1992-01-01

    This session at the Geothermal Energy Program Review X: Geothermal Energy and the Utility Market consisted of five presentations: ''Hard Rock Penetration - Summary'' by George P. Tennyson, Jr.; ''Overview - Hard Rock Penetration'' by James C. Dunn; ''An Overview of Acoustic Telemetry'' by Douglas S. Drumheller; ''Lost Circulation Technology Development Status'' by David A. Glowka; ''Downhole Memory-Logging Tools'' by Peter Lysne.

  14. EDITORIAL: Oxide semiconductors

    NASA Astrophysics Data System (ADS)

    Kawasaki, M.; Makino, T.

    2005-04-01

    Blue or ultraviolet semiconducting light-emitting diodes have the potential to revolutionize illumination systems in the near-future. Such industrial need has propelled the investigation of several wide-gap semiconducting materials in recent years. Commercial applications include blue lasers for DVD memory and laser printers, while military applications are also expected. Most of the material development has so far been focused on GaN (band gap 3.5 eV at 2 K), and ZnSe (2.9 eV) because these two representative direct transition semiconductors are known to be bright emitting sources. GaN and GaN-based alloys are emerging as the winners in this field because ZnSe is subject to defect formation under high current drive. On the other hand, another II-VI compound, ZnO, has also excited substantial interest in the optoelectronics-oriented research communities because it is the brightest emitter of all, owing to the fact that its excitons have a 60 meV binding energy. This is compared with 26 meV for GaN and 20 meV for ZnSe. The stable excitons could lead to laser action based on their recombination even at temperatures well above room temperature. ZnO has additional major properties that are more advantageous than other wide-gap materials: availability of large area substrates, higher energy radiation stability, environmentally-friendly ingredients, and amenability to wet chemical etching. However, ZnO is not new to the semiconductor field as exemplified by several studies made during the 1960s on structural, vibrational, optical and electrical properties (Mollwo E 1982 Landolt-Boernstein New Series vol 17 (Berlin: Springer) p 35). In terms of devices, the luminescence from light-emitting diode structures was demonstrated in which Cu2O was used as the p-type material (Drapak I T 1968 Semiconductors 2 624). The main obstacle to the development of ZnO has been the lack of reproducible p-type ZnO. The possibility of achieving epitaxial p-type layers with the aid of thermal

  15. Hardness Awareness Seminar

    DTIC Science & Technology

    1978-06-01

    32 6.2 Penetration effects 33 6.3 Blast effects 35 6.4 Electromagnetic radiation effects 36 6.5 Electromagnetic pulse effects 39 6.6 Thermal radiation...7.3 Ignition hardening techniques, A-10 wing 57 protection 7.4 EMR hardening techniques 58 7.5 EMP hardening techniques 60 7.6 Thermal radiation...hostile environments which can be produced by a nuclear explosion are: a fireball, an electromagnetic pulse, thermal radiation, nuclear radiation

  16. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  17. Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals

    SciTech Connect

    Vela-Becerra, Javier

    2013-02-01

    Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our group’s recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

  18. SiC detectors for radiation sources characterization and fast plasma diagnostic

    NASA Astrophysics Data System (ADS)

    Cannavò, A.; Torrisi, L.

    2016-09-01

    Semiconductor detectors based on SiC have been investigated to characterize the radiations (photons and particles) emitted from different sources, such as radioactive sources, electron guns, X-ray tubes and laser-generated plasmas. Detectors show high response velocity, low leakage current, high energy gap and high radiation hardness. Their high detection efficiency permits to use the detectors in spectroscopic mode and in time-of-flight (TOF) approach, generally employed to monitor low and high radiation fluxes, respectively. Using the laser start signal, they permit to study the properties of the generated plasma in vacuum by measuring accurately the particle velocity and energy using pulsed lasers at low and high intensities. Possible applications will be reported and discussed.

  19. Dynamic hardness of metals

    NASA Astrophysics Data System (ADS)

    Liang, Xuecheng

    Dynamic hardness (Pd) of 22 different pure metals and alloys having a wide range of elastic modulus, static hardness, and crystal structure were measured in a gas pulse system. The indentation contact diameter with an indenting sphere and the radius (r2) of curvature of the indentation were determined by the curve fitting of the indentation profile data. r 2 measured by the profilometer was compared with that calculated from Hertz equation in both dynamic and static conditions. The results indicated that the curvature change due to elastic recovery after unloading is approximately proportional to the parameters predicted by Hertz equation. However, r 2 is less than the radius of indenting sphere in many cases which is contradictory to Hertz analysis. This discrepancy is believed due to the difference between Hertzian and actual stress distributions underneath the indentation. Factors which influence indentation elastic recovery were also discussed. It was found that Tabor dynamic hardness formula always gives a lower value than that directly from dynamic hardness definition DeltaE/V because of errors mainly from Tabor's rebound equation and the assumption that dynamic hardness at the beginning of rebound process (Pr) is equal to kinetic energy change of an impact sphere over the formed crater volume (Pd) in the derivation process for Tabor's dynamic hardness formula. Experimental results also suggested that dynamic to static hardness ratio of a material is primarily determined by its crystal structure and static hardness. The effects of strain rate and temperature rise on this ratio were discussed. A vacuum rotating arm apparatus was built to measure Pd at 70, 127, and 381 mum sphere sizes, these results exhibited that Pd is highly depended on the sphere size due to the strain rate effects. P d was also used to substitute for static hardness to correlate with abrasion and erosion resistance of metals and alloys. The particle size effects observed in erosion were

  20. Automated S/TEM metrology on advanced semiconductor gate structures

    NASA Astrophysics Data System (ADS)

    Strauss, M.; Arjavac, J.; Horspool, D. N.; Nakahara, K.; Deeb, C.; Hobbs, C.

    2012-03-01

    Alternate techniques for obatining metrology data from advanced semiconductor device structures may be required. Automated STEM-based dimensional metrology (CD-STEM) was developed for complex 3D geometries in read/write head metrology in teh hard disk drive industry. It has been widely adopted, and is the process of record for metrology. Fully automated S/TEM metrology on advanced semiconductor gate structures is viable, with good repeatability and robustness. Consistent automated throughput of 10 samples per hour was achieved. Automated sample preparation was developed with sufficient throughput and quality to support the automated CD-STEM.

  1. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  2. Semiconductor nanowire optical antenna solar absorbers.

    PubMed

    Cao, Linyou; Fan, Pengyu; Vasudev, Alok P; White, Justin S; Yu, Zongfu; Cai, Wenshan; Schuller, Jon A; Fan, Shanhui; Brongersma, Mark L

    2010-02-10

    Photovoltaic (PV) cells can serve as a virtually unlimited clean source of energy by converting sunlight into electrical power. Their importance is reflected in the tireless efforts that have been devoted to improving the electrical and structural properties of PV materials. More recently, photon management (PM) has emerged as a powerful additional means to boost energy conversion efficiencies. Here, we demonstrate an entirely new PM strategy that capitalizes on strong broad band optical antenna effects in one-dimensional semiconductor nanostructures to dramatically enhance absorption of sunlight. We show that the absorption of sunlight in Si nanowires (Si NWs) can be significantly enhanced over the bulk. The NW's optical properties also naturally give rise to an improved angular response. We propose that by patterning the silicon layer in a thin film PV cell into an array of NWs, one can boost the absorption for solar radiation by 25% while utilizing less than half of the semiconductor material (250% increase in the light absorption per unit volume of material). These results significantly advance our understanding of the way sunlight is absorbed by one-dimensional semiconductor nanostructures and provide a clear, intuitive guidance for the design of efficient NW solar cells. The presented approach is universal to any semiconductor and a wide range of nanostructures; as such, it provides a new PV platform technology.

  3. Organizing Your Hard Disk.

    ERIC Educational Resources Information Center

    Stocker, H. Robert; Hilton, Thomas S. E.

    1991-01-01

    Suggests strategies that make hard disk organization easy and efficient, such as making, changing, and removing directories; grouping files by subject; naming files effectively; backing up efficiently; and using PATH. (JOW)

  4. ESD evaluation of radiation-hardened, high-reliability CMOS and MNOS ICs

    SciTech Connect

    Soden, J.M.; Stewart, H.D.; Pastorek, R.A.

    1983-01-01

    Standard human-body-equivalent circuit electrostatic discharge (ESD) tests were performed on the inputs of high-reliability, radiation-hardened integrated circuits (ICs) designed with seven different technologies. Metal and silicon gate complementary MOS (CMOS) and metal-nitride-oxide-semiconductor (MNOS) ICs with design rules ranging from 10 microns down to 2 microns were evaluated. The ESD hardness of these ICs ranged from 1 kV to greater than 9 kV. The low-range ESD hardness ICs were fabricated with a masking polysilicon ring that defined the input protection diodes. Tests on commercial equivalent ICs demonstrated that the ESD hardness of the radiation-hardened ICs was not significantly less than the ESD hardness of the commercial equivalent ICs. The failure modes and mechanisms of the ICs were evaluated. Most of the ICs that did not have the masking polysilicon ring failed because of input to V/sub DD/ or V/sub SS/ shorts due to degraded protection diodes. ESD tests with the pulse applied between the package metal lid and the package pins were also performed. These lid tests produced permanent input damage, the same as occurred during tests with the pulse applied to the package input, but the damage occurred at lower voltages. ESD pulses with peak voltages as low as 250 volts produced arcs from the lid to the input bond wires, resulting in degraded inputs.

  5. ESD evaluation of radiation-hardened, high reliability CMOS and MNOS ICs

    SciTech Connect

    Soden, J.M.; Pastorek, R.A.; Stewart, H.D.

    1984-02-01

    Standard human body equivalent circuit electrostatic discharge (ESD) tests were performed on the inputs of high-reliability, radiation-hardened integrated circuits (ICs) designed with seven different technologies. Metal and silicon gate complementary MOS (CMOS) and metal-nitrideoxide-semiconductor (MNOS) ICs with design rules ranging from 10 microns down to 2 microns were evaluated. The ESD hardness of these ICs ranged from 1 kV to greater than 9 kV. The low range ESD hardness ICs were fabricated with a masking polysilicon ring that defined the input protection diodes. Tests on commercial equivalent ICs demonstrated that the ESD hardness of the radiation-hardened ICs was not significantly less than the ESD hardness of the commercial equivalent ICs. The failure modes and mechanisms of the ICs were evaluated. Most of the ICs that did not have the masking polysilicon ring failed because of input to V/sub DD/ or V/sub SS/ shorts due to degraded protection diodes. ESD tests with the pulse applied between the package metal lid and the package pins were also performed. These lid tests produced permanent input damage, the same as occurred during tests with the pulse applied to the package input, but the damage occurred at lower voltages. ESD pulses with peak voltages as low as 250 volts produced arcs from the lid to the input bond wires, resulting in degraded inputs.

  6. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  7. Quantum Transport in Semiconductors

    DTIC Science & Technology

    1991-10-01

    SRS i 91 4. TITLE AND SUBTITLE Quantum Transport in Semiconductors 5. FUNDING NUMBER söMtos-rizk-ooss 6. AUTHOR(S) D. K. Ferry ©fte ELECTE...OF ABSTRACT UL NSN 7540-01-280-5500 O 1 9 Standard Form 298 (Rev. 2-89) Presented by ANSI Std «9-18 298-102 Final Report Quantum Transport in... Quantum Transport in Semiconductor Devices This final report describes a program of research investigating quantum effects which become important in

  8. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  9. New unorthodox semiconductor devices

    NASA Astrophysics Data System (ADS)

    Board, K.

    1985-12-01

    A range of new semiconductor devices, including a number of structures which rely entirely upon new phenomena, are discussed. Unipolar two-terminal devices, including impurity-controlled barriers and graded composition barriers, are considered, as are new transistor structures, including the hot-electron camel transistor, the planar-doped barrier transistor, the thermionic emission transistor, and the permeable base transistor. Regenerative switching devices are addressed, including the metal-tunnel insulator-semiconductor switch, the polysilicon switch, MIS, and MISIM switching structures, and the triangular-barrier switch. Heterostructure devices are covered, including the heterojunction bipolar transistor, the selectively doped heterojunction transistor, heterojunction lasers, and quantum-well structures.

  10. Hard X-ray astrophysics

    NASA Technical Reports Server (NTRS)

    Rothschild, R. E.

    1981-01-01

    Past hard X-ray and lower energy satellite instruments are reviewed and it is shown that observation above 20 keV and up to hundreds of keV can provide much valuable information on the astrophysics of cosmic sources. To calculate possible sensitivities of future arrays, the efficiencies of a one-atmosphere inch gas counter (the HEAO-1 A-2 xenon filled HED3) and a 3 mm phoswich scintillator (the HEAO-1 A-4 Na1 LED1) were compared. Above 15 keV, the scintillator was more efficient. In a similar comparison, the sensitivity of germanium detectors did not differ much from that of the scintillators, except at high energies where the sensitivity would remain flat and not rise with loss of efficiency. Questions to be addressed concerning the physics of active galaxies and the diffuse radiation background, black holes, radio pulsars, X-ray pulsars, and galactic clusters are examined.

  11. An investigation of medical radiation detection using CMOS image sensors in smartphones

    NASA Astrophysics Data System (ADS)

    Kang, Han Gyu; Song, Jae-Jun; Lee, Kwonhee; Nam, Ki Chang; Hong, Seong Jong; Kim, Ho Chul

    2016-07-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  12. Development of compact high efficiency microstructured semiconductor neutron detectors

    NASA Astrophysics Data System (ADS)

    McGregor, D. S.; Bellinger, S. L.; Fronk, R. G.; Henson, L.; Huddleston, D.; Ochs, T.; Shultis, J. K.; Sobering, T. J.; Taylor, R. D.

    2015-11-01

    Semiconductor diode detectors coated with neutron reactive materials are generally fashioned as planar diodes coated with 10B, 6LiF, or Gd. Planar detectors coated with 10B or 6LiF are limited to less than 5% intrinsic thermal neutron detection efficiency. Detectors coated with Gd can achieve higher efficiencies, but the low-energy signatures are problematic in the presence of background radiations. Microstructured semiconductor neutron detectors (MSNDs) can now achieve a tenfold increase in neutron detection efficiency over the planar diode designs. These semiconductor neutron detectors are fashioned with a matrix of microstructured patterns etched deeply into the semiconductor substrate and, subsequently, backfilled with neutron reactive materials. Intrinsic thermal-neutron detection efficiencies exceeding 35% have been achieved with devices no thicker than 1 mm while operating on less than 5 V, now allowing for instrumentation to be realized with similar performance as 3He gas-filled detectors.

  13. Hard X-ray micro-spectroscopy at Berliner Elektronenspeicherring für Synchrotronstrahlung II

    NASA Astrophysics Data System (ADS)

    Erko, A.; Zizak, I.

    2009-09-01

    The capabilities of the X-ray beamlines at Berliner Elektronenspeicherring für Synchrotronstrahlung II (BESSY II) for hard X-ray measurements with micro- and nanometer spatial resolution are reviewed. The micro-X-ray fluorescence analysis (micro-XRF), micro-extended X-ray absorption fine structure (micro-EXAFS), micro-X-ray absorption near-edge structure (micro-XANES) as well as X-ray standing wave technique (XSW), X-ray beam induced current (XBIC) in combination with micro-XRF and micro-diffraction as powerful methods for organic and inorganic sample characterization with synchrotron radiation are discussed. Mono and polycapillary optical systems were used for fine X-ray focusing down to 1 µm spot size with monochromatic and white synchrotron radiation. Polycapillary based confocal detection was applied for depth-resolved micro-XRF analysis with a volume resolution down to 3.4 · 10 - 6 mm 3. Standing wave excitation in waveguides was also applied to nano-EXAFS measurements with depth resolution on the order of 1 nm. Several examples of the methods and its applications in material research, biological investigations and metal-semiconductor interfaces analysis are given.

  14. Diamond based detectors for high temperature, high radiation environments

    NASA Astrophysics Data System (ADS)

    Metcalfe, A.; Fern, G. R.; Hobson, P. R.; Smith, D. R.; Lefeuvre, G.; Saenger, R.

    2017-01-01

    Single crystal CVD diamond has many desirable properties as a radiation detector; exceptional radiation hardness and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry and transmission mode applications), wide bandgap (high temperature operation with low noise and solar blind), an intrinsic pathway to fast neutron detection through the 12C(n,α)9Be reaction. This combination of radiation hardness, temperature tolerance and ability to detect mixed radiation types with a single sensor makes diamond particularly attractive as a detector material for harsh environments such as nuclear power station monitoring (fission and fusion) and oil well logging. Effective exploitation of these properties requires the development of a metallisation scheme to give contacts that remain stable over extended periods at elevated temperatures (up to 250°C in this instance). Due to the cost of the primary detector material, computational modelling is essential to best utilise the available processing methods for optimising sensor response through geometry and conversion media configurations and to fully interpret experimental data. Monte Carlo simulations of our diamond based sensor have been developed, using MCNP6 and FLUKA2011, assessing the sensor performance in terms of spectral response and overall efficiency as a function of the detector and converter geometry. Sensors with varying metallisation schemes for high temperature operation have been fabricated at Brunel University London and by Micron Semiconductor Limited. These sensors have been tested under a varied set of conditions including irradiation with fast neutrons and alpha particles at high temperatures. The presented study indicates that viable metallisation schemes for high temperature contacts have been successfully developed and the modelling results, supported by preliminary experimental data from partners, indicate that the simulations provide a reasonable representation of

  15. Optimizing biased semiconductor superlattices for terahertz amplification

    SciTech Connect

    Lei, Xiaoli; Wang, Dawei; Wu, Zhaoxin; Dignam, M. M.

    2014-08-11

    Over the past 15 yr or more, researchers have been trying to achieve gain for electromagnetic fields in the terahertz frequency region using biased semiconductor superlattices, but with little success. In this work, we employ our model of the excitonic states in biased GaAs/Al{sub 0.3}Ga{sub 0.7}As semiconductor superlattices to find the optimal structures for amplification of terahertz radiation. In particular, we determine the optimum well width, barrier width, and bias field for terahertz fields with frequencies ranging from 1 to 4 terahertz. We find that gain coefficients on the order of 40 cm{sup −1} should be achievable over most of this frequency range.

  16. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  17. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  18. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  19. The Effect of Total Ionizing Dose Degradation of Laptop Hard Disks

    NASA Technical Reports Server (NTRS)

    Nguyen, D. N.; Guertin, S. M.; Patterson, J. D.

    2005-01-01

    A series of total ionizing dose (TID) measurements were performed on commercial hard drives to explore the possible uses of the devices for the high radiation mission, and to help the understanding of the reliability of current hard drive technology. Three different models from three major manufacturers were tested with the aid of a commercial hard drive test system.

  20. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  1. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  2. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  3. Microcircuit radiation effects databank

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

  4. Radiation detection system

    DOEpatents

    Whited, R.C.

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  5. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  6. Phase-Locked Semiconductor Lasers With Separate Contacts

    NASA Technical Reports Server (NTRS)

    Katz, Joseph; Yariv, Amnon; Margalit, Shlomo

    1988-01-01

    Individual current feeds enable better uniformity and flexible control. Separate contacts for lasers in array enable control of output radiation pattern and compensation of manufacturing nonuniformities among lasers. Concept of separate current control described for two-laser array in "Semiconductor Laser Phased Array" (NPO-15963).

  7. Method for altering the luminescence of a semiconductor

    DOEpatents

    Barbour, J. Charles; Dimos, Duane B.

    1999-01-01

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

  8. Method for altering the luminescence of a semiconductor

    DOEpatents

    Barbour, J.C.; Dimos, D.B.

    1999-01-12

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

  9. Radiation Hardening of Computers

    NASA Technical Reports Server (NTRS)

    Nichols, D. K.; Smith, L. S.; Zoutendyk, J. A.; Giddings, A. E.; Hewlett, F. W.; Treece, R. K.

    1986-01-01

    Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.

  10. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, Dimitrios C.

    1983-01-01

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

  11. Budgeting in Hard Times.

    ERIC Educational Resources Information Center

    Parrino, Frank M.

    2003-01-01

    Interviews with school board members and administrators produced a list of suggestions for balancing a budget in hard times. Among these are changing calendars and schedules to reduce heating and cooling costs; sharing personnel; rescheduling some extracurricular activities; and forming cooperative agreements with other districts. (MLF)

  12. Running in Hard Times

    ERIC Educational Resources Information Center

    Berry, John N., III

    2009-01-01

    Roberta Stevens and Kent Oliver are campaigning hard for the presidency of the American Library Association (ALA). Stevens is outreach projects and partnerships officer at the Library of Congress. Oliver is executive director of the Stark County District Library in Canton, Ohio. They have debated, discussed, and posted web sites, Facebook pages,…

  13. CSI: Hard Drive

    ERIC Educational Resources Information Center

    Sturgeon, Julie

    2008-01-01

    Acting on information from students who reported seeing a classmate looking at inappropriate material on a school computer, school officials used forensics software to plunge the depths of the PC's hard drive, searching for evidence of improper activity. Images were found in a deleted Internet Explorer cache as well as deleted file space.…

  14. Semiconductor Bolometers Give Background-Limited Performance

    NASA Technical Reports Server (NTRS)

    Goebel, John; McMurray, Robert

    2006-01-01

    Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

  15. Three dimensional strained semiconductors

    DOEpatents

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  16. Stretchable Organic Semiconductor Devices.

    PubMed

    Qian, Yan; Zhang, Xinwen; Xie, Linghai; Qi, Dianpeng; Chandran, Bevita K; Chen, Xiaodong; Huang, Wei

    2016-11-01

    Stretchable electronics are essential for the development of intensely packed collapsible and portable electronics, wearable electronics, epidermal and bioimplanted electronics, 3D surface compliable devices, bionics, prosthesis, and robotics. However, most stretchable devices are currently based on inorganic electronics, whose high cost of fabrication and limited processing area make it difficult to produce inexpensive, large-area devices. Therefore, organic stretchable electronics are highly attractive due to many advantages over their inorganic counterparts, such as their light weight, flexibility, low cost and large-area solution-processing, the reproducible semiconductor resources, and the easy tuning of their properties via molecular tailoring. Among them, stretchable organic semiconductor devices have become a hot and fast-growing research field, in which great advances have been made in recent years. These fantastic advances are summarized here, focusing on stretchable organic field-effect transistors, light-emitting devices, solar cells, and memory devices.

  17. Subwavelength metal-optic semiconductor nanopatch lasers.

    PubMed

    Yu, Kyoungsik; Lakhani, Amit; Wu, Ming C

    2010-04-26

    We report on near infrared semiconductor nanopatch lasers with subwavelength-scale physical dimensions (0.019 cubic wavelengths) and effective mode volumes (0.0017 cubic wavelengths). We observe lasing in the two most fundamental optical modes which resemble oscillating electrical and magnetic dipoles. The ultra-small laser volume is achieved with the presence of nanoscale metal patches which suppress electromagnetic radiation into free-space and convert a leaky cavity into a highly-confined subwavelength optical resonator. Such ultra-small lasers with metallodielectric cavities will enable broad applications in data storage, biological sensing, and on-chip optical communication.

  18. Shielding Electrostatic Fields in Polar Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Hönig, G. M. O.; Westerkamp, S.; Hoffmann, A.; Callsen, G.

    2017-02-01

    Polar semiconductor materials enable a variety of classic and quantum-light sources, which are optimized continuously. However, one key problem—the inherent electric crystal polarization of such materials—remains unsolved and deteriorates the radiative exciton decay rate. We suggest a sequence of reverse interfaces to compensate these polarization effects, while the polar, natural crystal growth direction is maintained. Former research approaches, like growth on less-polar crystal planes or even the stabilization of unnatural phases, never reached industrial maturity. In contrast, our concept provides a way for the development of ultrafast devices based on established growth processes for polar materials, while the electric potential landscape becomes adjustable.

  19. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Metal Contacts in Semiconductors.

    DTIC Science & Technology

    1983-11-01

    surfaces, Pnotoelectron spe troscopy, Auger electron spectro- I scopy, Schottky barriers, ohmic contacts, Defects in semiconductors, Cadmium * telluride...Indium phosphide, Gallium arsenide, Gallium Selenide . j 20. ABSTR ACT (roothat ow rees esh " neceay and td..ity by block -. b*w) SThe application of...angstroms. Also, provided one eliminates the systems where cadmium outdiffusion into high work function metals occurs then good agreement between the

  1. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  2. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  3. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  4. New Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Balestra, F.

    2008-11-01

    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.

  5. RHOBOT: Radiation hardened robotics

    SciTech Connect

    Bennett, P.C.; Posey, L.D.

    1997-10-01

    A survey of robotic applications in radioactive environments has been conducted, and analysis of robotic system components and their response to the varying types and strengths of radiation has been completed. Two specific robotic systems for accident recovery and nuclear fuel movement have been analyzed in detail for radiation hardness. Finally, a general design approach for radiation-hardened robotics systems has been developed and is presented. This report completes this project which was funded under the Laboratory Directed Research and Development program.

  6. Unemployment: Hard-Core or Hard-Shell?

    ERIC Educational Resources Information Center

    Lauer, Robert H.

    1972-01-01

    The term hard-core'' makes the unemployed culpable; the term hard shell'' shifts the burden to the employer, and the evidence from the suburban plant indicates that a substantial part of the problem must lie there. (DM)

  7. Radiation Effects in Advanced Microelectonic Technologies

    NASA Technical Reports Server (NTRS)

    Johnston, A. H.

    1997-01-01

    Several new radiation phenomena have been observed in laboratory testing of advanced microelectonics that are not yet of sufficient importance for typical space applications, but provide insight into the likely effects of scaling and device design on radiation hardness.

  8. Moisture influence on near-infrared prediction of wheat hardness

    NASA Astrophysics Data System (ADS)

    Windham, William R.; Gaines, Charles S.; Leffler, Richard G.

    1991-02-01

    Recently near infrared (NTR) reflectance instrumentation has been used to provide an empirical measure of wheat hardness. This hardness scale is based on the radiation scattering properties of meal particles at 1680 and 2230 nm. Hard wheats have a larger mean particles size (PS) after grinding than soft wheats. However wheat kernel moisture content can influence mean PS after grinding. The objective of this study was to determine the sensitivity of MR wheat hardness measurements to moisture content and to make the hardness score independent of moisture by correcting hardness measurements for the actual moisture content of measured samples. Forty wheat cultivars composed of hard red winter hard red spring soft red winter and soft white winter were used. Wheat kernel subsamples were stored at 20 40 60 and 80 relative humidity (RH). After equilibration samples were ground and the meal analyzed for hardness score (HS) and moisture. HS were 48 50 54 and 65 for 20 40 60 and 80 RH respectively. Differences in HS within each wheat class were the result of a moisture induced change in the PS of the meal. An algorithm was developed to correct HS to 11 moisture. This correction provides HS that are nearly independent of moisture content. 1.

  9. Super-Hard Superconductivity

    NASA Astrophysics Data System (ADS)

    Adams, Philip; Prozorov, Ruslan

    2005-03-01

    We present the magnetic response of Type-II superconductivity in the extreme pinning limit, where screening currents within an order of magnitude of the Ginzburg-Landau depairing critical current density develop upon the application of a magnetic field. We show that this ``super-hard'' limit is well approximated in highly disordered, cold drawn, Nb wire whose magnetization response is characterized by a cascade of Meissner-like phases, each terminated by a catastrophic collapse of the magnetization. Direct magneto-optic measurements of the flux penetration depth in the virgin magnetization branch are in excellent agreement with the exponential model in which Jc(B)=Jco(-B/Bo), where Jco˜5x10^6 A/cm^2 for Nb. The implications for the fundamental limiting hardness of a superconductor will be discussed.

  10. Laser interferometric method for determining the carrier diffusion length in semiconductors

    SciTech Connect

    Manukhov, V. V.; Fedortsov, A. B.; Ivanov, A. S.

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  11. Aging and Radiation Effects in Stockpile Electronics

    SciTech Connect

    Hartman, E.F.

    1999-03-25

    It is likely that aging is affecting the radiation hardness of stockpile electronics, and we have seen apparent examples of aging that affects the electronic radiation hardness. It is also possible that low-level intrinsic radiation that is inherent during stockpile life will damage or in a sense age electronic components. Both aging and low level radiation effects on radiation hardness and stockpile reliability need to be further investigated by using both test and modeling strategies that include appropriate testing of electronic components withdrawn from the stockpile.

  12. Tunable High Brightness Semiconductor Sources

    DTIC Science & Technology

    2015-05-01

    AFRL-RY-WP-TR-2015-0066 TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES Robert Bedford, Saima Husaini, Charles Reyner, and Tuoc Dang...3. DATES COVERED (From - To) May 2015 Final 5 November 2010 – 1 February 2015 4. TITLE AND SUBTITLE TUNABLE HIGH BRIGHTNESS SEMICONDUCTOR SOURCES 5a...included within the Tunable High Brightness Semiconductor Sources work unit includes several technology advancements. First, theoretical advances in mid

  13. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  14. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  15. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  16. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  17. Electrodes for Semiconductor Gas Sensors.

    PubMed

    Lee, Sung Pil

    2017-03-25

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode-semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode-semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect.

  18. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  19. Medipix2/USB Portable Radiation Camera

    SciTech Connect

    Vykydal, Z.; Holy, T.; Jakubek, J.; Platkevic, M.; Pospisil, S.

    2007-11-26

    Advances in the field of semiconductor technologies in the last years make possible to develop new types of ionizing radiation detectors. The Medipix2 readout ASIC is an example of such a device. It is the hybrid single photon counting imaging chip (sensor and readout chips are fabricated separately). With an appropriate sensor chip on the top, it can count single X-ray photons, without any noise or dark current, at high fluxes (several Gigaphotons per cm{sup 2} per second). It also offers excellent radiation hardness and good position resolution (256x256 pixels, each pixel has a 55x55 {mu}m{sup 2} area). To make the Medipix2 imaging chip more portable for specific applications a microprocessor controlled read-out system based on the USB (Universal Serial Bus) interface has been developed. It integrates all necessary detector support into one compact device (75x46 mm{sup 2}). All power supplies including sensor bias (up to 100 V) are internally derived from the voltage provided by the USB connection.

  20. Radiation hardened microprocessor for small payloads

    NASA Technical Reports Server (NTRS)

    Shah, Ravi

    1993-01-01

    The RH-3000 program is developing a rad-hard space qualified 32-bit MIPS R-3000 RISC processor under the Naval Research Lab sponsorship. In addition, under IR&D Harris is developing RHC-3000 for embedded control applications where low cost and radiation tolerance are primary concerns. The development program leverages heavily from commercial development of the MIPS R-3000. The commercial R-3000 has a large installed user base and several foundry partners are currently producing a wide variety of R-3000 derivative products. One of the MIPS derivative products, the LR33000 from LSI Logic, was used as the basis for the design of the RH-3000 chipset. The RH-3000 chipset consists of three core chips and two support chips. The core chips include the CPU, which is the R-3000 integer unit and the FPA/MD chip pair, which performs the R-3010 floating point functions. The two support whips contain all the support functions required for fault tolerance support, real-time support, memory management, timers, and other functions. The Harris development effort had first passed silicon success in June, 1992 with the first rad-hard 32-bit RH-3000 CPU chip. The CPU device is 30 kgates, has a 508 mil by 503 mil die size and is fabricated at Harris Semiconductor on the rad-hard CMOS Silicon on Sapphire (SOS) process. The CPU device successfully passed tesing against 600,000 test vectors derived directly on the LSI/MIPS test suite and has been operational as a single board computer running C code for the past year. In addition, the RH-3000 program has developed the methodology for converting commercially developed designs utilizing logic synthesis techniques based on a combination of VHDK and schematic data bases.

  1. Nanoscale Semiconductor Electronics

    DTIC Science & Technology

    2015-02-25

    MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL -RV-PS-TR-2014-0202 12. DISTRIBUTION / AVAILABILITY STATEMENT Approved for public release...Kingman Rd, Suite 0944 Ft Belvoir, VA 22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2 cys Official Record Copy AFRL /RVSE/Jesse Mee 1 cy ... AFRL -RV-PS- AFRL -RV-PS- TR-2014-0202 TR-2014-0202 NANOSCALE SEMICONDUCTOR ELECTRONICS Steven R. J. Brueck and Ganesh Balakrishnan University of New

  2. Electrowetting on semiconductors

    NASA Astrophysics Data System (ADS)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  3. Semiconductor cooling apparatus

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A. (Inventor); Gaier, James R. (Inventor)

    1993-01-01

    Gas derived graphite fibers generated by the decomposition of an organic gas are joined with a suitable binder. This produces a high thermal conductivity composite material which passively conducts heat from a source, such as a semiconductor, to a heat sink. The fibers may be intercalated. The intercalate can be halogen or halide salt, alkaline metal, or any other species which contributes to the electrical conductivity improvement of the graphite fiber. The fibers are bundled and joined with a suitable binder to form a high thermal conductivity composite material device. The heat transfer device may also be made of intercalated highly oriented pyrolytic graphite and machined, rather than made of fibers.

  4. Microwave semiconductor devices

    NASA Astrophysics Data System (ADS)

    Sitch, J. E.

    1985-03-01

    The state of the art of microwave semiconductor design is reviewed, with emphasis on developments of the past 10-12 years. Consideration is given to: varistor diodes; varactor diodes; and transit time negative diodes. The design principles of bipolar and unipolar transistors are discussed, with reference to power FETs, traveling-wave FETs, and camel or planar-doped barrier transistors. Recent innovations in the field of fabrication technology are also considered, including: crystal growth; doping; and packaging. Several schematic drawings and photographs of the different devices are provided.

  5. Semiconductor Terahertz Technology

    DTIC Science & Technology

    2009-06-15

    COVERED (From - To) 15-June-2009 Final Report 12 Apr 07 - 15 Apr 09 4. TITLE AND SUBTITLE Sa. CONTRACT NUMBER FA8718-07-C-0030 Semiconductor Terahertz ...and the other for the phononic waveguides. 15. SUBJECT TERMS Quantum cascade laser, gennanium, gennanium-tin, terahertz 16. SECURITY CLASStFICATION OF...7 Figure 7 lllustration of a GaAs-based active region waveguide with either Ga or Au as cladding operating in the Restrahlen band of GaN . 10 Figure 8

  6. Chemically Derivatized Semiconductor Photoelectrodes.

    DTIC Science & Technology

    1982-01-04

    as Si, Ge, and GaAs derivatized with reagents based on ferrocene such as those represented by I and II. Work with p-type semiconductor photoelectrode...Concerning n-type Si it was found that EtOH/0.1 M En-Bu4N)C104 solutions containing A = ferrocene and A+ = ferri-- cinium result in a constant output of...electrical energy from an illuminated photoelectrochemical device configured as in Scheme II.(20) The ferrocene captures the photogenerated h+ at a rate -4

  7. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  8. Power semiconductor controlled drives

    NASA Astrophysics Data System (ADS)

    Dubey, Gopal K.

    This book presents power semiconductor controlled drives employing dc motors, induction motors, and synchronous motors. The dynamics of motor and load systems are covered. Open-loop and closed-loop drives are considered, and thyristor, power transistor, and GTO converters are discussed. In-depth coverage is given to ac drives, particularly those fed by voltage and current source inverters and cycloconverters. Full coverage is given to brushless and commutatorless dc drives, including load-commuted synchronous motor drives. Rectifier-controlled dc drives are presented in detail.

  9. Additional compound semiconductor nanowires for photonics

    NASA Astrophysics Data System (ADS)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  10. Hard X-ray and low-energy gamma-ray spectrometers

    NASA Technical Reports Server (NTRS)

    Gehrels, N.; Crannell, C. J.; Orwig, L. E.; Forrest, D. J.; Lin, R. P.; Starr, R.

    1988-01-01

    Basic principles of operation and characteristics of scintillation and semi-conductor detectors used for solar hard X-ray and gamma-ray spectrometers are presented. Scintillation materials such as NaI offer high stopping power for incident gamma rays, modest energy resolution, and relatively simple operation. They are, to date, the most often used detector in solar gamma-ray spectroscopy. The scintillator BGO has higher stopping power than NaI, but poorer energy resolution. The primary advantage of semi-conductor materials such as Ge is their high-energy resolution. Monte-Carlo simulations of the response of NaI and Ge detectors to model solar flare inputs show the benefit of high resoluton for studying spectral lines. No semi-conductor material besides Ge is currently available with adequate combined size and purity to make general-use hard X-ray and gamma-ray detectors for solar studies.

  11. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  12. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  13. Hard metal composition

    DOEpatents

    Sheinberg, H.

    1983-07-26

    A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 wt % boron carbide and the remainder a metal mixture comprising from 70 to 90% tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 and 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

  14. Hard metal composition

    DOEpatents

    Sheinberg, Haskell

    1986-01-01

    A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 weight percent boron carbide and the remainder a metal mixture comprising from 70 to 90 percent tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 to 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

  15. Semiconductor neutron detector

    DOEpatents

    Ianakiev, Kiril D.; Littlewood, Peter B.; Blagoev, Krastan B.; Swinhoe, Martyn T.; Smith, James L.; Sullivan, Clair J.; Alexandrov, Boian S.; Lashley, Jason Charles

    2011-03-08

    A neutron detector has a compound of lithium in a single crystal form as a neutron sensor element. The lithium compound, containing improved charge transport properties, is either lithium niobate or lithium tantalate. The sensor element is in direct contact with a monitor that detects an electric current. A signal proportional to the electric current is produced and is calibrated to indicate the neutrons sensed. The neutron detector is particularly useful for detecting neutrons in a radiation environment. Such radiation environment may, e.g. include gamma radiation and noise.

  16. Hard Superconducting Gap in InSb Nanowires.

    PubMed

    Gül, Önder; Zhang, Hao; de Vries, Folkert K; van Veen, Jasper; Zuo, Kun; Mourik, Vincent; Conesa-Boj, Sonia; Nowak, Michał P; van Woerkom, David J; Quintero-Pérez, Marina; Cassidy, Maja C; Geresdi, Attila; Koelling, Sebastian; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Kouwenhoven, Leo P

    2017-04-12

    Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (∼0.5 T), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two-dimensional electron gases, and topological insulators and holds relevance for topological superconductivity and quantum computation.

  17. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  18. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, Rommel; Chen, Yih-Wen

    1987-01-01

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  19. Process for producing chalcogenide semiconductors

    DOEpatents

    Noufi, R.; Chen, Y.W.

    1985-04-30

    A process for producing chalcogenide semiconductor material is disclosed. The process includes forming a base metal layer and then contacting this layer with a solution having a low pH and containing ions from at least one chalcogen to chalcogenize the layer and form the chalcogenide semiconductor material.

  20. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  1. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  2. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  3. Stimulated emission on impurity – band optical transitions in semiconductors

    SciTech Connect

    Bekin, N A; Shastin, V N

    2015-02-28

    This paper examines conditions for population inversion and amplification in the terahertz range using impurity – band electron transitions in semiconductors and semiconductor structures. Our estimates indicate that stimulated emission on such transitions under optical excitation of impurities can be obtained in a semiconductor with a sufficiently high doping level if electron heating is restricted. At a CO{sub 2} laser pump power density near 0.2 MW cm{sup -2} (photon energy of 117 meV), the gain in n-GaAs may exceed the loss by 50 cm{sup -1} provided the electron gas temperature does not exceed 40 K. We analyse the influence of the carrier effective mass and doping compensation on the gain coefficient and briefly discuss the use of resonance tunnelling for obtaining stimulated emission on impurity – band transitions in quantum cascade heterostructures. (terahertz radiation)

  4. Charge splitting resistive layer for a semiconductor gamma camera

    SciTech Connect

    Miller, D.W.; Schlosser, P.A.

    1981-09-29

    An improved semiconductor gamma camera is disclosed. The gamma camera includes a p-i-n semiconductor diode which detects the presence and energy of gamma radiation from a source. Typically the source is radioactive material in a patient organ which is detected and then interpreted by a doctor while diagnosing the condition of that organ. The detector includes an improved electrical connection technique to allow the p-i-n diode to be connected to electronic circuitry necessary to provide spatial and energy information. In the improved camera first a passivation layer is deposited on both faces of the p-i-n diode and then a resistive layer is applied to form a reliable easily reproduced electrical contact to the junction. These two layers in combination prevent foreign matter from contacting the semiconductor material comprising the detector while providing interconnection to the electronic circuitry.

  5. Wavelength-resonant surface-emitting semiconductor laser

    DOEpatents

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  6. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  7. Dielectric Spectroscopy of Semiconductors.

    DTIC Science & Technology

    1985-05-01

    and with the various electronic excitation processes at higher frequencies, including plasma phenomena [1,2]. In keeping with this approach nothing...behaviour is hardly ever seen and that the consequences of ." -this sbould be faced in terms of a modified theory of trapping and . ; recombination...analysis of Figure 3. The value of Chf corresponds clearly to a Schottky barrier and there is no evidence at all of the -%I

  8. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  9. Hard Metal Disease

    PubMed Central

    Bech, A. O.; Kipling, M. D.; Heather, J. C.

    1962-01-01

    In Great Britain there have been no published reports of respiratory disease occurring amongst workers in the hard metal (tungsten carbide) industry. In this paper the clinical and radiological findings in six cases and the pathological findings in one are described. In two cases physiological studies indicated mild alveolar diffusion defects. Histological examination in a fatal case revealed diffuse pulmonary interstitial fibrosis with marked peribronchial and perivascular fibrosis and bronchial epithelial hyperplasia and metaplasia. Radiological surveys revealed the sporadic occurrence and low incidence of the disease. The alterations in respiratory mechanics which occurred in two workers following a day's exposure to dust are described. Airborne dust concentrations are given. The industrial process is outlined and the literature is reviewed. The toxicity of the metals is discussed, and our findings are compared with those reported from Europe and the United States. We are of the opinion that the changes which we would describe as hard metal disease are caused by the inhalation of dust at work and that the component responsible may be cobalt. Images PMID:13970036

  10. Hard solder 20-kW QCW stack array diode laser

    NASA Astrophysics Data System (ADS)

    Li, Xiaoning; Kang, Lijun; Wang, Jingwei; Zhang, Pu; Xiong, Lingling; Liu, Xingsheng

    2012-03-01

    With the increasing applications of high power semiconductor lasers in industry, advanced manufacturing, aerospace, medical systems, display, entertainment, etc., semiconductor lasers with high power and high performances are required. The performance of semiconductor lasers is greatly affected by packaging structure, packaging process and beam shaping. A novel macro channel cooler (MaCC) for stack array laser with good heat dissipation capacity and high reliability is presented in this work. Based on the MaCC package, a high power stack array diode laser is successfully fabricated. A series of techniques such as spectrum control and beam control are used to achieve narrow spectrum and high beam quality. The performances of the semiconductor laser stack array are characterized. A high power 20kW QCW hard solder packaged stack array laser is fabricated; a narrow spectrum of 3.94 nm and an excellent rectangular beam shape are obtained. The lifetime of the stack array laser is tested as well.

  11. Radiation design criteria handbook. [design criteria for electronic parts applications

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Martin, K. E.; Douglas, S.

    1976-01-01

    Radiation design criteria for electronic parts applications in space environments are provided. The data were compiled from the Mariner/Jupiter Saturn 1977 electronic parts radiation test program. Radiation sensitive device types were exposed to radiation environments compatible with the MJS'77 requirements under suitable bias conditions. A total of 189 integrated circuits, transistors, and other semiconductor device types were tested.

  12. Multistability, chaos, and random signal generation in semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Ying, Lei; Huang, Danhong; Lai, Ying-Cheng

    2016-06-01

    Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot be readily realized using conventional radiation sources, the so-called THz gap. Efforts in the past three decades have demonstrated various nonlinear dynamical behaviors including chaos, suggesting the potential to exploit chaos in semiconductor superlattices as random signal sources (e.g., random number generators) in the THz frequency range. We consider a realistic model of hot electrons in semiconductor superlattice, taking into account the induced space charge field. Through a systematic exploration of the phase space we find that, when the system is subject to an external electrical driving of a single frequency, chaos is typically associated with the occurrence of multistability. That is, for a given parameter setting, while there are initial conditions that lead to chaotic trajectories, simultaneously there are other initial conditions that lead to regular motions. Transition to multistability, i.e., the emergence of multistability with chaos as a system parameter passes through a critical point, is found and argued to be abrupt. Multistability thus presents an obstacle to utilizing the superlattice system as a reliable and robust random signal source. However, we demonstrate that, when an additional driving field of incommensurate frequency is applied, multistability can be eliminated, with chaos representing the only possible asymptotic behavior of the system. In such a case, a random initial condition will lead to a trajectory landing in a chaotic attractor with probability 1, making quasiperiodically driven semiconductor superlattices potentially as a reliable

  13. Multistability, chaos, and random signal generation in semiconductor superlattices.

    PubMed

    Ying, Lei; Huang, Danhong; Lai, Ying-Cheng

    2016-06-01

    Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot be readily realized using conventional radiation sources, the so-called THz gap. Efforts in the past three decades have demonstrated various nonlinear dynamical behaviors including chaos, suggesting the potential to exploit chaos in semiconductor superlattices as random signal sources (e.g., random number generators) in the THz frequency range. We consider a realistic model of hot electrons in semiconductor superlattice, taking into account the induced space charge field. Through a systematic exploration of the phase space we find that, when the system is subject to an external electrical driving of a single frequency, chaos is typically associated with the occurrence of multistability. That is, for a given parameter setting, while there are initial conditions that lead to chaotic trajectories, simultaneously there are other initial conditions that lead to regular motions. Transition to multistability, i.e., the emergence of multistability with chaos as a system parameter passes through a critical point, is found and argued to be abrupt. Multistability thus presents an obstacle to utilizing the superlattice system as a reliable and robust random signal source. However, we demonstrate that, when an additional driving field of incommensurate frequency is applied, multistability can be eliminated, with chaos representing the only possible asymptotic behavior of the system. In such a case, a random initial condition will lead to a trajectory landing in a chaotic attractor with probability 1, making quasiperiodically driven semiconductor superlattices potentially as a reliable

  14. Hard gamma ray emission from blazars

    NASA Technical Reports Server (NTRS)

    Marscher, Alan P.; Bloom, Steven D.

    1992-01-01

    The gamma-ray emission expected from compact extragalactic sources of nonthermal radiation is examined. The highly variable objects in this class should produce copious amounts of self-Compton gamma-rays in the compact relativistic jet. This is shown to be a likely interpretation of the hard gamma-ray emission recently detected from the quasar 3C 279 during a period of strong nonthermal flaring at lower frequencies. Ways of discriminating between the self-Compton model and other possible gamma-ray emission mechanisms are discussed.

  15. ST Rad-Hard Power Bipolar Transistors Product Portfolio

    NASA Astrophysics Data System (ADS)

    Camonita, Giuseppe; Pintacuda, Francesco

    2011-10-01

    This article describes the STMicroelectronics Rad-Hard Bipolar Transistors product range addressed specifically for space applications. Available up to 100krad Total Ionized Dose radiation level at LDRS (Low Dose Rate Sensitivity) conditions, they are qualified according to the ESCC specifications. Here follows the main features, the characterization curves including static and dynamic behaviours, and the radiation performances for some products. Also some application examples are given.

  16. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  17. Photocatalysis Using Semiconductor Nanoclusters

    SciTech Connect

    Thurston, T.R.; Wilcoxon,J.P.

    1999-01-21

    We report on experiments using nanosize MoS{sub 2} to photo-oxidize organic pollutants in water using visible light as the energy source. We have demonstrated that we can vary the redox potentials and absorbance characteristics of these small semiconductors by adjusting their size, and our studies of the photooxidation of organic molecules have revealed that the rate of oxidation increases with increasing bandgap (i.e. more positive valence band and more negative conduction band potentials). Because these photocatalysis reactions can be performed with the nanoclusters fully dispersed and stable in solution, liquid chromatography can be used to determine both the intermediate reaction products and the state of the nanoclusters during the reaction. We have demonstrated that the MoS{sub 2} nanoclusters remain unchanged during the photooxidation process by this technique. We also report on studies of MoS{sub 2} nanoclusters deposited on TiO{sub 2} powder.

  18. Semiconductor adiabatic qubits

    DOEpatents

    Carroll, Malcolm S.; Witzel, Wayne; Jacobson, Noah Tobias; Ganti, Anand; Landahl, Andrew J.; Lilly, Michael; Nguyen, Khoi Thi; Bishop, Nathaniel; Carr, Stephen M.; Bussmann, Ezra; Nielsen, Erik; Levy, James Ewers; Blume-Kohout, Robin J.; Rahman, Rajib

    2016-12-27

    A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and coupling terms between qubits that represent a problem of interest. The qubits are initialized by way of a tuneable parameter, a local tunnel coupling within each qubit, such that the qubits remain in a ground energy state, and that initial state is represented by the qubits being in a superposition of |0> and |1> states. The parameter is altered over time adiabatically or such that relaxation mechanisms maintain a large fraction of ground state occupation through decreasing the tunnel coupling barrier within each qubit with the appropriate schedule. The final state when tunnel coupling is effectively zero represents the solution state to the problem represented in the |0> and |1> basis, which can be accurately read at each qubit location.

  19. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.; Miller, W. E.

    1988-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

  20. Hardness Assurance Techniques for New Generation COTS Devices

    NASA Technical Reports Server (NTRS)

    Lee, C. I.; Rax, B. G.; Johnston, A. H.

    1996-01-01

    Hardness Assurance (HA) techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed significant degradation at HDR, not at low dose rate environment. New generation low-power op amps showed more degradation at low voltage applications. HA test techniques for COTS devices are presented in this paper.

  1. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  2. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  3. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  4. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin [Pullman, WA; Jones, Kelly [Colfax, WA; Ciampi, Guido [Watertown, MA

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  5. Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications

    DTIC Science & Technology

    2008-12-01

    emission from SF-free m- GaN . 3. THZ EMISSION FROM NONPOLAR NITRIDE SEMICONDUCTORS Terahertz (THz) radiation from semiconductors illuminated...defects are studied. High quality InGaN quantum wells grown on bulk stacking fault (SF) -free GaN substrates show larger PL intensity and shorter PL...visible light emitters. We have also demonstrated enhanced THz emission from nonpolar GaN due to carrier transport in internal in-plane electric fields

  6. Synchronization of semiconductor laser arrays with 2D Bragg structures

    NASA Astrophysics Data System (ADS)

    Baryshev, V. R.; Ginzburg, N. S.

    2016-08-01

    A model of a planar semiconductor multi-channel laser is developed. In this model two-dimensional (2D) Bragg mirror structures are used for synchronizing radiation of multiple laser channels. Coupling of longitudinal and transverse waves can be mentioned as the distinguishing feature of these structures. Synchronization of 20 laser channels is demonstrated with a semi-classical approach based on Maxwell-Bloch equations.

  7. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  8. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  9. Nanomechanics of hard films on compliant substrates.

    SciTech Connect

    Reedy, Earl David, Jr.; Emerson, John Allen; Bahr, David F.; Moody, Neville Reid; Zhou, Xiao Wang; Hales, Lucas; Adams, David Price; Yeager,John; Nyugen, Thao D.; Corona, Edmundo; Kennedy, Marian S.; Cordill, Megan J.

    2009-09-01

    Development of flexible thin film systems for biomedical, homeland security and environmental sensing applications has increased dramatically in recent years [1,2,3,4]. These systems typically combine traditional semiconductor technology with new flexible substrates, allowing for both the high electron mobility of semiconductors and the flexibility of polymers. The devices have the ability to be easily integrated into components and show promise for advanced design concepts, ranging from innovative microelectronics to MEMS and NEMS devices. These devices often contain layers of thin polymer, ceramic and metallic films where differing properties can lead to large residual stresses [5]. As long as the films remain substrate-bonded, they may deform far beyond their freestanding counterpart. Once debonded, substrate constraint disappears leading to film failure where compressive stresses can lead to wrinkling, delamination, and buckling [6,7,8] while tensile stresses can lead to film fracture and decohesion [9,10,11]. In all cases, performance depends on film adhesion. Experimentally it is difficult to measure adhesion. It is often studied using tape [12], pull off [13,14,15], and peel tests [16,17]. More recent techniques for measuring adhesion include scratch testing [18,19,20,21], four point bending [22,23,24], indentation [25,26,27], spontaneous blisters [28,29] and stressed overlayers [7,26,30,31,32,33]. Nevertheless, sample design and test techniques must be tailored for each system. There is a large body of elastic thin film fracture and elastic contact mechanics solutions for elastic films on rigid substrates in the published literature [5,7,34,35,36]. More recent work has extended these solutions to films on compliant substrates and show that increasing compliance markedly changes fracture energies compared with rigid elastic solution results [37,38]. However, the introduction of inelastic substrate response significantly complicates the problem [10,39,40]. As

  10. Thermal runaway in semiconductor laser windows.

    PubMed

    Johnson, R L; O'Keefe, J D

    1972-12-01

    A small perturbation model is used to obtain analytical expressions for the critical or runaway power density for laser windows constructed of semiconductor materials. These equations are used to compute the critical power density for several realistic window installations taking account of the finite value of realizable convection cooling coefficients. Computations were prepared for silicon transmitting 4 .0-micro. radiation and for germanium at 10.6 micro. In this way it is shown that power densities are principally limited by the effectiveness of cooling from the face of the window, that is, the surface perpendicular to the laser beam. Since convection cooling coefficients are small the transmission of high power densities through semiconductor windows is therefore contingent upon finding more effective means to cool the window from the face. Finally, a simplified calculation was made in an attempt to account for nonuniformity of the incident laser beam. a given window, but not severely. The results show the onuniformity reduces the runaway power for a given window, but not severely.

  11. Coated semiconductor devices for neutron detection

    DOEpatents

    Klann, Raymond T.; McGregor, Douglas S.

    2002-01-01

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  12. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  13. Laser Assisted Semiconductor Device Processing

    DTIC Science & Technology

    1980-11-30

    In strongly absorbing semiconductors, the dominant absorption mechanism at frequencies higher than the bandgap frequency is interband transitions. The...current). The solution for miconductors. In strongly absorbing semiconductors, the n(x,t ) is a closed-form expression consisting of complemen- dominant 0...representative profles are shown in Fis. $-12. o -- For Nd: YAG in silicon. E, _0.99hv and the profiks are therefore and-gap recombination dominated

  14. Overview: Hard Rock Penetration

    SciTech Connect

    Dunn, J.C.

    1992-08-01

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  15. Overview - Hard Rock Penetration

    SciTech Connect

    Dunn, James C.

    1992-03-24

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling Organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  16. Overview: Hard Rock Penetration

    SciTech Connect

    Dunn, J.C.

    1992-01-01

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  17. Radiation-Hardened Solid-State Drive

    NASA Technical Reports Server (NTRS)

    Sheldon, Douglas J.

    2010-01-01

    A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

  18. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  19. The Mechanical Properties of III-V Compound Semiconductors Used in High Efficiency Multijunction Photovoltaic Cells

    NASA Astrophysics Data System (ADS)

    Zakaria, Abdallah

    Lattice-mismatched heteroepitaxy enables the fabrication of metamorphic solar cells that have reached record light conversion efficiencies in the last five years. These devices are accelerating the commercialization of concentrator photovoltaics that can compete with fossil fuels for terrestrial energy production. A critical part of metamorphic structures is the graded buffer layer (GBL) needed to progressively change the lattice constant of the substrate to that the epilayer of interest. The effectiveness of the graded buffer layer in relieving misfit strain affects the quality of the device grown and depends on a variety of parameters. This study focuses on the mechanical properties of semiconductor compounds used in graded buffer layers. First, the effect of compound semiconductor spontaneous atomic ordering on hardness is assessed. In1--xGaxP was deposited on Ge wafers in two structures. A surfactant was used in experiment A to induce a lower degree of order. High resolution x-ray diffraction (HRXRD) estimated a theoretical band gap energy Eg corrected for strain effects. Photoluminescence measured the actual Eg. By comparing the two, the degree of order eta was determined to be 0.12-0.15 for samples A and 0.43-0.44 for samples B. Atomic force microscopy (AFM) demonstrated that all wafers had an equivalent surface roughness of 6.1-7.4 A. Nanoindentation measurements determined that the degree of order has no effect on the hardness of InGaP. Using 1/2 (115) superlattice reflection scans, the InGaP ordered domains size was estimated to be 28.5 nm for sample B1. No superlattice peak was detected in sample A1. The large ordered domain size in B1 explains why no order-hardening behavior was observed in InGaP. Second, a correlation between the composition of a ternary compound semiconductor and hardness is established and the effect of oxidation is determined. A structure consisting of three different AlxGa1--xAs layers separated by In0.01Ga0.99As etch stops was

  20. Activation of molecular catalysts using semiconductor quantum dots

    DOEpatents

    Meyer, Thomas J [Chapel Hill, NC; Sykora, Milan [Los Alamos, NM; Klimov, Victor I [Los Alamos, NM

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  1. Measuring the Hardness of Minerals

    ERIC Educational Resources Information Center

    Bushby, Jessica

    2005-01-01

    The author discusses Moh's hardness scale, a comparative scale for minerals, whereby the softest mineral (talc) is placed at 1 and the hardest mineral (diamond) is placed at 10, with all other minerals ordered in between, according to their hardness. Development history of the scale is outlined, as well as a description of how the scale is used…

  2. Subwavelength Nanopatch Cavities for Semiconductor Plasmon Lasers

    NASA Astrophysics Data System (ADS)

    Manolatou, Christina; Rana, Farhan

    2008-05-01

    We propose and analyze a family of nanoscale cavities for electrically-pumped surface-emitting semiconductor lasers that use surface plasmons to provide optical mode confinement in cavities which have dimensions in the 100-300 nm range. The proposed laser cavities are in many ways nanoscale optical versions of micropatch antennas that are commonly used at microwave/RF frequencies. Surface plasmons are not only used for mode confinement but also for output beam shaping to realize single-lobe far-field radiation patterns with narrow beam waists from subwavelength size cavities. We identify the cavity modes with the largest quality factors and modal gain, and show that in the near-IR wavelength range (1.0-1.6 microns) cavity losses (including surface plasmon losses) can be compensated by the strong mode confinement in the gain region provided by the surface plasmons themselves and the required material threshold gain values can be smaller than 700 1/cm.

  3. INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

    NASA Astrophysics Data System (ADS)

    Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

    1988-11-01

    A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

  4. 75 FR 49526 - Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Employment and Training Administration Freescale Semiconductor, Inc., Technical Information Center, Tempe, AZ; Freescale Semiconductor, Inc., Technical Information Center, Woburn, MA; Amended Certification Regarding... Semiconductor, Inc., Technical Information Center, Tempe, Arizona. The notice was published in the...

  5. Microelectronic Chips For Radiation-Dose Tests

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G.; Lin, Yu-Sang; Ray, Kevin P.; Sokoloski, Martin M.

    1993-01-01

    Custom-made single-chip complementary metal-oxide semiconductor (CMOS) integrated circuit designed to reveal effects of ionizing radiation on itself and similar integrated circuits. Potential terrestrial use: safety-oriented monitoring of ionizing radiation at nuclear powerplants, nuclear-waste sites, and the like.

  6. Radiation hardened PMOS process with ion implanted threshold adjust

    NASA Technical Reports Server (NTRS)

    Jhabvala, M.

    1979-01-01

    By including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted

  7. Nanoimprint system development and status for high volume semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

    2016-10-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is

  8. Radiation Assurance for the Space Environment

    NASA Technical Reports Server (NTRS)

    Barth, Janet L.; LaBel, Kenneth A.; Poivey, Christian

    2004-01-01

    The space radiation environment can lead to extremely harsh operating conditions for spacecraft electronic systems. A hardness assurance methodology must be followed to assure that the space radiation environment does not compromise the functionality and performance of space-based systems during the mission lifetime. The methodology includes a definition of the radiation environment, assessment of the radiation sensitivity of parts, worst-case analysis of the impact of radiation effects, and part acceptance decisions which are likely to include mitigation measures.

  9. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  10. Blue and UV Semiconductor Lasers

    NASA Astrophysics Data System (ADS)

    Krukowski, S.; Skierbiszewski, C.; Perlin, P.; Leszczynski, M.; Bockowski, M.; Porowski, S.

    2006-04-01

    Despite many technological difficulties the group III nitrides: GaN, AlN and InN and their alloys are primary candidates for electro-optical coherent light sources. In the recent years the research and technology of the nitride based continuous wave (CW) laser diodes (LDs) led to creation of blue-violet coherent light sources of power up to 200 mW. The progress has been attained by using various ways to attack the main obstacles in the technology of these devices such as insufficient size of high quality lattice matched substrates, low p-doping efficiency of Mg acceptor, poor contact to p-type semiconductor and low efficiency of radiative recombination. The two different approaches were used to overcome the substrate problem: hetero-epitaxy and homoepitaxy. Homoepitaxy used high pressure GaN high quality crystals. Heteroepitaxy used sapphire, SiC or GaAs substrates and very sophisticated techniques of reduction of the dislocation density. The low p-doping efficiency by using Mg acceptor is related to creation of Mg--H complexes due to hydrogen presence during the growth of laser diode quantum structures. In addition, Mg acceptor has low efficiency due to its high energy. High Mg concentrations can be obtained by using either MOCVD or ammonia source MBE growth. An alternative route is to use hydrogen-free plasma activated MBE (PA-MBE) method. The recent advances and the prospects of both approaches will be discussed. Solid AlGaInN solution offers a possibility to cover wide spectral range, starting from near UV to blue, green and red. Arsenide based laser diodes (LDs) are efficient coherent red light sources. Therefore, nitride based LDs are considered to be devices of choice for green, blue and UV spectral range. So far only blue and violet laser has been realized. The progress toward green and UV lasers is far less spectacular. The results in all these areas and future prospects will be discussed.

  11. Dielectric screening in semiconductors

    NASA Astrophysics Data System (ADS)

    Harrison, Walter A.; Klepeis, John E.

    1988-01-01

    Intra-atomic and interatomic Coulomb interactions are incorporated into bond-orbital theory, based upon universal tight-binding parameters, in order to treat the effects of charge redistribution in semiconductor bonds. The dielectric function ɛ(q) is obtained for wave numbers in a [100] direction. The screening of differences in average hybrid energy across a heterojunction is calculated in detail, indicating that the decay length for the potential depends upon the relative values of Madelung and intra-atomic Coulomb terms. The parameters used here predict an imaginary decay length and thus an oscillating potential near the interface. The same theory is applied to point defects by imbedding a cluster in a matrix lattice, taking charges in that lattice to be consistent with continuum theory. Illustrating the theory with a phosphorus impurity in silicon, it is seen that the impurity and its neighboring atoms have charges on the order of only one-tenth of an electronic charge, alternating in sign from neighbor to neighbor as for planar defects. Although there are shifts in the term values on the order of a volt, the difference in these shifts for neighboring atoms is much smaller so that the effect on the bonds is quite small. This behavior is analogous to the response of a dielectric continuum to a point charge: The medium is locally neutral except at the center of the cluster and there are slowly varying potentials e2/ɛr. Because of this slow variation, free-atom term values should ordinarily suffice for the calculation of bond properties and bond lengths at impurities. Corrections are larger for homovalent substitutions such as carbon in silicon.

  12. Microcircuit radiation effects databank

    NASA Technical Reports Server (NTRS)

    1983-01-01

    This databank is the collation of radiation test data submitted by many testers and serves as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. It contains radiation sensitivity results from ground tests and is divided into two sections. Section A lists total dose damage information, and section B lists single event upset cross sections, I.E., the probability of a soft error (bit flip) or of a hard error (latchup).

  13. Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

    PubMed Central

    Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

    2011-01-01

    Objectives Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Methods Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. Results The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Conclusion Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one. PMID:22953195

  14. Radiation effects in GaN devices and materials (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Sun, Ke-Xun; Nelson, Ron; Yeamans, Charles

    2016-10-01

    Gallium Nitride (GaN) is a wide-bandgap semiconductor having excellent radiation properties. GaN crystal is ionic-covalent with significant iconicity resulting in stronger molecular bond strength, which in in turn leads to excellent radiation hardness. Further, GaN has ultrafast carrier relaxation time. GaN transistors are promising for high-frequency applications due to their large bandgap (3.9eV) and higher breakdown field (<5MV/cm). These exceptional characteristics make GaN suitable to operate in high radiation flux environment such as fusion plasma facilities, for ultrafast detection. The expected detector temporal response is faster than 0.01-1 ns. We have been systematically testing neutron radiation effects in GaN devices and materials at Los Alamos Neutron Science Center (LANSCE) with ever increased neutron fluence levels, and at National Ignition Facility (NIF) high foot, high yield shots. In 2013 LANSCE run cycle, we tested GaN UV LED devices at 3.1E11 neutrons/cm^2. In 2015-2016 LANSCE run cycles, we have been operating three neutron beam lines with fluence level 1.2E11, 1.5E13, and 1E15 neutrons/cm^2. The irradiated samples include GaN UV LEDs, GaN HEMTs, and GaN substrates. In the experiments up to 2015 run cycle, we have characterized electrical and optical performances of GaN device before and after neutron irradiation, including the device IV curve measurements monitored at over the three months neutron irradiation time, and device IV curve measurements before and after NIF high yield shot irradiation. We observed no substantial degradation. These experiments firmly established GaN devices as the radiation hard platform of the next generation fusion plasma diagnostic instruments.

  15. Thin coatings and films hardness evaluation

    NASA Astrophysics Data System (ADS)

    Matyunin, V. M.; Marchenkov, A. Yu; Demidov, A. N.; Karimbekov, M. A.

    2016-10-01

    The existing thin coatings and films hardness evaluation methods based on indentation with pyramidal indenter on various scale levels are expounded. The impact of scale factor on hardness values is performed. The experimental verification of several existing hardness evaluation methods regarding the substrate hardness value and the “coating - substrate” composite hardness value is made.

  16. Medium induced transverse momentum broadening in hard processes

    NASA Astrophysics Data System (ADS)

    Mueller, A. H.; Wu, Bin; Xiao, Bo-Wen; Yuan, Feng

    2017-02-01

    Using deep inelastic scattering on a large nucleus as an example, we consider the transverse momentum broadening of partons in hard processes in the presence of medium. We find that one can factorize the vacuum radiation contribution and medium related PT broadening effects into the Sudakov factor and medium dependent distributions, respectively. Our derivations can be generalized to other hard processes, such as dijet productions, which can be used as a probe to measure the medium PT broadening effects in heavy ion collisions when Sudakov effects are not overwhelming.

  17. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    PubMed

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  18. Nanoindentation hardness of mineralized tissues.

    PubMed

    Oyen, Michelle L

    2006-01-01

    A series elastic and plastic deformation model [Sakai, M., 1999. The Meyer hardness: a measure for plasticity? Journal of Materials Research 14(9), 3630-3639] is used to deconvolute the resistance to plastic deformation from the plane strain modulus and contact hardness parameters obtained in a nanoindentation test. Different functional dependencies of contact hardness on the plane strain modulus are examined. Plastic deformation resistance values are computed from the modulus and contact hardness for engineering materials and mineralized tissues. Elastic modulus and plastic deformation resistance parameters are used to calculate elastic and plastic deformation components, and to examine the partitioning of indentation deformation between elastic and plastic. Both the numerical values of plastic deformation resistance and the direct computation of deformation partitioning reveal the intermediate mechanical responses of mineralized composites when compared with homogeneous engineering materials.

  19. Radiation Hardened Electronics Destined For Severe Nuclear Reactor Environments

    SciTech Connect

    Holbert, Keith E.; Clark, Lawrence T.

    2016-02-19

    board exhibits radiation resilience to over 200 krad. Furthermore, our ASIC microprocessor using RHBD techniques was shown to be fully functional after an exposure of 2.5 Mrad whereas the COTS microcontroller units failed catastrophically at <100 krad. The methods developed in this work can facilitate the long-term viability of radiation-hard robotic systems, thereby avoiding obsolescence issues. As a case in point, the nuclear industry with its low purchasing power does not drive the semiconductor industry strategic plans, and the rapid advancements in electronics technology can leave legacy systems stranded.

  20. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A. B.

    1986-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.