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Sample records for radiation hard semiconductor

  1. Radiation-Hardness Data For Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Nichols, D. K.; Brown, S. F.; Gauthier, M. K.; Martin, K. E.

    1984-01-01

    Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

  2. Strategies for Radiation Hardness Testing of Power Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Soltis, James V. (Technical Monitor); Patton, Martin O.; Harris, Richard D.; Rohal, Robert G.; Blue, Thomas E.; Kauffman, Andrew C.; Frasca, Albert J.

    2005-01-01

    Plans on the drawing board for future space missions call for much larger power systems than have been flown in the past. These systems would employ much higher voltages and currents to enable more powerful electric propulsion engines and other improvements on what will also be much larger spacecraft. Long term human outposts on the moon and planets would also require high voltage, high current and long life power sources. Only hundreds of watts are produced and controlled on a typical robotic exploration spacecraft today. Megawatt systems are required for tomorrow. Semiconductor devices used to control and convert electrical energy in large space power systems will be exposed to electromagnetic and particle radiation of many types, depending on the trajectory and duration of the mission and on the power source. It is necessary to understand the often very different effects of the radiations on the control and conversion systems. Power semiconductor test strategies that we have developed and employed will be presented, along with selected results. The early results that we have obtained in testing large power semiconductor devices give a good indication of the degradation in electrical performance that can be expected in response to a given dose. We are also able to highlight differences in radiation hardness that may be device or material specific.

  3. Development of radiation hard semiconductor sensors for charged particle tracking at very high luminosities

    NASA Astrophysics Data System (ADS)

    Betancourt, Christopher; Fadeyev, Vitaliy; Sadrozinski, Hartmut F.; Wright, John

    2010-09-01

    The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm-2. This is much larger than typical fluences in space, but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface treatment), novel detector designs (3D, edge-less, interconnects).

  4. 11th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors

    NASA Astrophysics Data System (ADS)

    The primary goal of the Conference is to review the present status of the Semiconductor Detector apparatuses in the field of High Energy or Astroparticle Physics. In both cases the requests on the detector systems are very demanding: very large instrumented surface, radiation hardness and high reliability. Part of the talks will be devoted to describe the pixel and microstrip silicon-based detectors presently operated at the LHC experiments. The operational experience and the detector performance with the p-p runs 2009-2012 will be discussed. Another fraction of the talks will be devoted to plans for upgrading the LHC tracker detectors for the next runs of the LHC and on strategies for future high luminosity upgrades of the LHC. Studies on radiation hardness of silicon materials, diamond-based detectors, innovative solutions for optical links and power device components will be reported. The astroparticle detectors activity will also be reviewed. Semiconductor applications in different fields, like medical imaging, radioactive monitoring and one quantum-physics experiment will be rapidly touched.

  5. Semiconductor radiation detector

    DOEpatents

    Patt, Bradley E.; Iwanczyk, Jan S.; Tull, Carolyn R.; Vilkelis, Gintas

    2002-01-01

    A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

  6. Radiation Hardness Assurance for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Day, John H. (Technical Monitor)

    2002-01-01

    The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section

  7. Radiation Effects on Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Liu, Guangyu

    In order to observe and analyze the behavior of semiconductor devices under radiation exposure, a real time measurement system has been built so that investigations can be carried out before, during, and after radiation exposure. The system consists of an IBM personal computer with IEEE488 I/O interface board and various Hewlett-Packard instruments. Real time measurement and device parameter characterization programs have been written to accommodate the study. Such a system provides the ability to do not only direct and dynamic measurements, but also comprehensive parameter analyses for semiconductor devices. It is well known that MOS devices are vulnerable to radiation produced ionization. Many MOS device parameters are radiation sensitive. Based on real time measurement results and the mathematical model of a CMOS inverter, a radiation hardening design method has been developed. With the example of noise margin optimization, the concept of desensitizing device parameters is expected to minimize radiation damage to MOS integrated circuits.

  8. Hard gap in epitaxial semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.; Kuemmeth, F.; Krogstrup, P.; Nygård, J.; Marcus, C. M.

    2015-03-01

    Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on the proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunnelling conductance below the superconducting gap, suggesting a continuum of subgap states—a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. The hard gap, together with favourable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

  9. Radiation Hardness of Trigger Electronics

    NASA Astrophysics Data System (ADS)

    Zawisza, Irene; Safonov, Alexei; Gilmore, Jason; Khotilovich, Vadim

    2011-10-01

    As the maximum intensity of particle accelerators increases, probing the most basic questions of the Universe, detectors and electronics must be designed to insure reliability in high-radiation environments. As the Large Hadron Collider (LHC) beam intensity is increased, it is necessary to upgrade the electronics in the Compact Muon Solenoid (CMS). To select interesting events, CMS utilizes fast electronics, which are installed in the experimental cavern. However, much higher post-upgrade levels of radiation in the cavern set tight requirements on the radiation hardness of the new electronics. Damaging effects of high and low energy radiation leads to disruption of digital circuits and accumulated degradation of silicon components. Quantifying the radiation exposure is required for the design of a radiation-tolerant system, but current simulation studies suffer from large uncertainties. We compare simulation predictions with measured performance in two different experimental studies, which evaluate component performance for pre and post irradiation determining the survivability of electronics in the harsh CMS environment. Funded by DOE and NSF-REU Program.

  10. Radiation Hardness Assurance (RHA) Guideline

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Radiation Hardness Assurance (RHA) consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the mission space environment. The subset of interests for NEPP and the REAG, are EEE parts. It is important to register that all of these undertakings are in a feedback loop and require constant iteration and updating throughout the mission life. More detail can be found in the reference materials on applicable test data for usage on parts.

  11. Development of radiation hard scintillators

    SciTech Connect

    Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G. ); Blackburn, R. )

    1992-05-01

    Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro.

  12. Automated radiation hard ASIC design tool

    NASA Technical Reports Server (NTRS)

    White, Mike; Bartholet, Bill; Baze, Mark

    1993-01-01

    A commercial based, foundry independent, compiler design tool (ChipCrafter) with custom radiation hardened library cells is described. A unique analysis approach allows low hardness risk for Application Specific IC's (ASIC's). Accomplishments, radiation test results, and applications are described.

  13. Wafer-fused semiconductor radiation detector

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

  14. Hybrid anode for semiconductor radiation detectors

    DOEpatents

    Yang, Ge; Bolotnikov, Aleksey E; Camarda, Guiseppe; Cui, Yonggang; Hossain, Anwar; Kim, Ki Hyun; James, Ralph B

    2013-11-19

    The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

  15. Electron gas grid semiconductor radiation detectors

    DOEpatents

    Lee, Edwin Y.; James, Ralph B.

    2002-01-01

    An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the "electron-only" semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

  16. Advanced Semiconductor Dosimetry in Radiation Therapy

    SciTech Connect

    Rosenfeld, Anatoly B.

    2011-05-05

    Modern radiation therapy is very conformal, resulting in a complexity of delivery that leads to many small radiation fields with steep dose gradients, increasing error probability. Quality assurance in delivery of such radiation fields is paramount and requires real time and high spatial resolution dosimetry. Semiconductor radiation detectors due to their small size, ability to operate in passive and active modes and easy real time multichannel readout satisfy many aspects of in vivo and in a phantom quality assurance in modern radiation therapy. Update on the recent developments and improvements in semiconductor radiation detectors and their application for quality assurance in radiation therapy, based mostly on the developments at the Centre for Medical Radiation Physics (CMRP), University of Wollongong, is presented.

  17. Radiation-hard static induction transistor

    SciTech Connect

    Hanes, M.H.; Bartko, J.; Hwang, J.M.; Rai-Choudhury, P.; Leslie, S.G.

    1988-12-01

    The static induction transistor (SIT) has been proposed as a preferred power switching device for applications in military and space environments because of its potential for radiation hardness, high-frequency operation, and the incorporation of on-chip smart power sensor and logic functions. Design, fabrication, and characteristics of a 350 V, 100 A buried gate SIT are described. The potential radiation hardness of this class of devices was evaluated by measurement of SIT characteristics after irradiation with 100 Mrad electrons (2 MeV), and up to 10%16% fission neutrons/cm/sup 2/. High-temperature operation and the possibility of radiation damage self-annealing are discussed.

  18. Room temperature semiconductor detectors for hard x-ray astrophysics

    NASA Astrophysics Data System (ADS)

    Parsons, Ann M.; Stahle, Carl M.; Lisse, Casey M.; Babu, Sachi; Gehrels, Neil A.; Teegarden, Bonnard J.; Shu, Peter K.

    1994-09-01

    Room temperature cadmium zinc telluride (CdZnTe) and mercuric iodide (HgI2) semiconductor hard X-ray detectors are currently being evaluated at NASA Goddard Space Flight Center for use in future balloon and satellite applications. PoRTIA, a small engineering prototype hard X-ray (20 - 150 keV) balloon instrument will contain both a CdZnTe and a HgI2 detector, each 6.5 cm2 x .15 - .2 cm and sharing the same 5 degree(s) field-of-view. PoRTIA will be launched from Alice Springs, Australia in the Spring of 1995 as a piggyback instrument aboard the GRIS balloon payload. PoRTIA will provide valuable information about detector efficiency, durability and material dependent detector background components at balloon altitudes as it observes the Crab Nebula. In addition, a CdZnTe research and development program has been initiated to develop the capability to produce improved CdZnTe detectors for astrophysics applications. The work at Goddard continues in an effort to develop CdZnTe detectors with improvements in electronics, contacts and packaging methods.

  19. GaTe semiconductor for radiation detection

    DOEpatents

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. Hard proximity induced superconducting gap in semiconductor - superconductor epitaxial hybrids

    NASA Astrophysics Data System (ADS)

    Jespersen, Thomas; Krogstrup, Peter; Ziino, Nino; Albrecht, Sven; Chang, Willy; Madsen, Morten; Johnson, Erik; Kuemmeth, Ferdinand; Nygård, Jesper; Marcus, Charles

    2015-03-01

    We present molecular beam epitaxy grown InAs semiconductor nanowires capped with a shell of aluminum (superconductor). The hybrid wires are grown without breaking vacuum, resulting in an epitaxial interface between the two materials as demonstrated by detailed transmission electron microscopy and simulations. The domain matching at the interface is discussed. Incorporating the epitaxial nanowire hybrids in electrical devices we performed detailed tunneling spectroscopy of the proximity induced superconducting gap in the InAs core at 20 mK. We find the sub-gap conductance being at least a factor 200 smaller than the normal state value (gap hardness). This is a significant improvement compared to devices fabricated by conventional lithographic methods and metal evaporation showing no more than a factor of ~ 5 . The epitaxial hybrids seem to solve the soft gap problem associated with the use of nanowire hybrids for future applications in topological quantum information based on Majorana zero modes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation, and the European Commission.

  1. Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian; Buchner, Stephen

    2007-01-01

    This presentation discusses radiation hardness assurance (RHA) for space systems, providing both the programmatic aspects of RHA and the RHA procedure. RHA consists of all activities undertaken to ensure that the electronics and materials of a space system perform to their design specifications after exposure to the space radiation environment. RHA also pertains to environment definition, part selection, part testing, spacecraft layout, radiation tolerant design, and mission/system/subsystems requirements. RHA procedure consists of establishing mission requirements, defining and evaluating the radiation hazard, selecting and categorizing the appropriate parts, and evaluating circuit response to hazard. The RHA approach is based on risk management and is confined only to parts, it includes spacecraft layout, system/subsystem/circuit design, and system requirements and system operations. RHA should be taken into account in the early phases of a program including the proposal and feasibility analysis phases.

  2. GaN as a radiation hard particle detector

    NASA Astrophysics Data System (ADS)

    Grant, J.; Bates, R.; Cunningham, W.; Blue, A.; Melone, J.; McEwan, F.; Vaitkus, J.; Gaubas, E.; O'Shea, V.

    2007-06-01

    Semiconductor tracking detectors at experiments such as ATLAS and LHCb at the CERN Large Hadron Collider (LHC) will be subjected to intense levels of radiation. The proposed machine upgrade, the Super-LHC (SLHC), to 10 times the initial luminosity of the LHC will require detectors that are ultra-radiation hard. Much of the current research into finding a detector that will meet the requirements of the SLHC has focused on using silicon substrates with enhanced levels of oxygen, for example Czochralski silicon and diffusion oxygenated float zone silicon, and into novel detector structures such as 3D devices. Another avenue currently being investigated is the use of wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN). Both SiC and GaN should be intrinsically more radiation hard than silicon. Pad and guard ring structures were fabricated on three epitaxial GaN wafers. The epitaxial GaN thickness was either 2.5 or 12 μm and the fabricated detectors were irradiated to various fluences with 24 GeV/c protons and 1 MeV neutrons. Detectors were characterised pre- and post-irradiation by performing current-voltage ( I- V) and charge collection efficiency (CCE) measurements. Devices fabricated on 12 μm epitaxial GaN irradiated to fluences of 1016 protons cm-2 and 1016 neutrons cm-2 show maximum CCE values of 26% and 20%, respectively, compared to a maximum CCE of 53% of the unirradiated device.

  3. Fault-Tolerant, Radiation-Hard DSP

    NASA Technical Reports Server (NTRS)

    Czajkowski, David

    2011-01-01

    Commercial digital signal processors (DSPs) for use in high-speed satellite computers are challenged by the damaging effects of space radiation, mainly single event upsets (SEUs) and single event functional interrupts (SEFIs). Innovations have been developed for mitigating the effects of SEUs and SEFIs, enabling the use of very-highspeed commercial DSPs with improved SEU tolerances. Time-triple modular redundancy (TTMR) is a method of applying traditional triple modular redundancy on a single processor, exploiting the VLIW (very long instruction word) class of parallel processors. TTMR improves SEU rates substantially. SEFIs are solved by a SEFI-hardened core circuit, external to the microprocessor. It monitors the health of the processor, and if a SEFI occurs, forces the processor to return to performance through a series of escalating events. TTMR and hardened-core solutions were developed for both DSPs and reconfigurable field-programmable gate arrays (FPGAs). This includes advancement of TTMR algorithms for DSPs and reconfigurable FPGAs, plus a rad-hard, hardened-core integrated circuit that services both the DSP and FPGA. Additionally, a combined DSP and FPGA board architecture was fully developed into a rad-hard engineering product. This technology enables use of commercial off-the-shelf (COTS) DSPs in computers for satellite and other space applications, allowing rapid deployment at a much lower cost. Traditional rad-hard space computers are very expensive and typically have long lead times. These computers are either based on traditional rad-hard processors, which have extremely low computational performance, or triple modular redundant (TMR) FPGA arrays, which suffer from power and complexity issues. Even more frustrating is that the TMR arrays of FPGAs require a fixed, external rad-hard voting element, thereby causing them to lose much of their reconfiguration capability and in some cases significant speed reduction. The benefits of COTS high

  4. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

    2010-01-01

    We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

  5. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect

    2012-05-01

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  6. Implementing QML (Qualified Manufacturers List) for radiation hardness assurance

    SciTech Connect

    Winokur, P.S.; Sexton, F.W.; Fleetwood, D.M.; Terry, M.D.; Shaneyfelt, M.R.; Dressendorfer, P.V.; Schwank, J.R.

    1990-01-01

    Statistical process control (SPC) of technology parameters relevant to radiation hardness, test structure to Integrated Circuit (IC) correlation, and extrapolation from laboratory to threat scenarios are keys to implementing Qualified Manufacture's List (QML) for radiation hardness assurance in a cost-effective manner. Data from approximately 300 wafer lots fabricated in Sandia's 4/3-{mu}m and Complementry Metal Oxide Semiconductor (CMOS) IIIA (2-{mu}m) technologies are used to demonstrate approaches to, and highlight issues associated with, implementing QML for radiation-hardened CMOS in space applications. An approach is demonstrated to implement QML for signal-event upset SEU immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates. It is seen that the process capability indices, C{sub p} and C{sub pk}, for the manufacture of 400 k{Omega} feedback resistors required to provide SEU tolerance do not conform to 6{sigma}'' quality standards. For total-dose, {triangle}V{sub it} shifts measured on transistors are correlated with circuit response in the space environment. SPC is illustrated for {triangle}V{sub it}, and violations of SPC rules are interpreted in terms of continuous improvement. Finally, design validation for SEU, and quality conformance inspections for total-dose, are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, three-dimensional device-plus-circuit codes, and improved design simulators. 29 refs., 10 figs., 1 tab.

  7. A semiconductor radiation imaging pixel detector for space radiation dosimetry

    NASA Astrophysics Data System (ADS)

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented.

  8. A semiconductor radiation imaging pixel detector for space radiation dosimetry.

    PubMed

    Kroupa, Martin; Bahadori, Amir; Campbell-Ricketts, Thomas; Empl, Anton; Hoang, Son Minh; Idarraga-Munoz, John; Rios, Ryan; Semones, Edward; Stoffle, Nicholas; Tlustos, Lukas; Turecek, Daniel; Pinsky, Lawrence

    2015-07-01

    Progress in the development of high-performance semiconductor radiation imaging pixel detectors based on technologies developed for use in high-energy physics applications has enabled the development of a completely new generation of compact low-power active dosimeters and area monitors for use in space radiation environments. Such detectors can provide real-time information concerning radiation exposure, along with detailed analysis of the individual particles incident on the active medium. Recent results from the deployment of detectors based on the Timepix from the CERN-based Medipix2 Collaboration on the International Space Station (ISS) are reviewed, along with a glimpse of developments to come. Preliminary results from Orion MPCV Exploration Flight Test 1 are also presented. PMID:26256630

  9. Radiation hardness characteristics of Si-PIN radiation detectors

    NASA Astrophysics Data System (ADS)

    Jeong, Manhee; Jo, Woo Jin; Kim, Han Soo; Ha, Jang Ho

    2015-06-01

    The Korea Atomic Energy Research Institute (KAERI) has fabricated Si-PIN radiation detectors with low leakage current, high resistivity (>11 kΩ cm) and low capacitance for high-energy physics and X-ray spectroscopy. Floating-zone (FZ) 6-in. diameter N-type silicon wafers, with <1 1 1> crystal orientation and 675 μm thick, were used in the detector fabrication. The active areas are 3 mm×3 mm, 5 mm×5 mm and 10 mm×10 mm. We used a double deep-diffused structure at the edge of the active area for protection from the surface leakage path. We also compared the electrical performance of the Si-PIN detector with anti-reflective coating (ARC). For a detector with an active area of 3 mm×3 mm, the leakage current is about 1.9 nA and 7.4 nA at a 100 V reverse bias voltage, and 4.6 pF and 4.4 pF capacitance for the detector with and without an ARC, respectively. In addition, to compare the energy resolution in terms of radiation hardness, we measured the energy spectra with 57Co and 133Ba before the irradiation. Using developed preamplifiers (KAERI-PA1) that have ultra-low noise and high sensitivity, and a 3 mm×3 mm Si-PIN radiation detector, we obtained energy resolutions with 122 keV of 57Co and 81 keV of 133Ba of 0.221 keV and 0.261 keV, respectively. After 10, 100, 103, 104 and 105 Gy irradiation, we tested the characteristics of the radiation hardness on the Si-PIN radiation detectors in terms of electrical and energy spectra performance changes. The fabricated Si-PIN radiation detectors are working well under high dose irradiation conditions.

  10. Implementing QML for radiation hardness assurance

    NASA Astrophysics Data System (ADS)

    Winokur, P. S.; Sexton, F. W.; Fleetwood, D. M.; Terry, M. D.; Shaneyfelt, M. R.

    1990-12-01

    The US government has proposed a qualified manufacturers list (QML) methodology to qualify integrated circuits for high reliability and radiation hardness. An approach to implementing QML for single-event upset (SEU) immunity on 16k SRAMs that involves relating values of feedback resistance to system error rates is demonstrated. It is seen that the process capability indices, Cp and Cpk, for the manufacture of 400-k-ohm feedback resistors required to provide SEU tolerance do not conform to 6 sigma quality standards. For total-dose, interface trap charge, Delta Vit, shifts measured on transistors are correlated with circuit response in the space environment. Statistical process control (SPC) is illustrated for Delta Vit, and violations of SPC rules are interpreted in terms of continuous improvement. Design validation for SEU and quality conformance inspections for total-dose are identified as major obstacles to cost-effective QML implementation. Techniques and tools that will help QML provide real cost savings are identified as physical models, 3-D device-plus-circuit codes, and improved design simulators.

  11. Development of a radiation-hard photomultiplier tube

    NASA Technical Reports Server (NTRS)

    Birnbaum, M. M.; Bunker, R. L.; Roderick, J.; Stephenson, K.

    1984-01-01

    In a radiation-hard photomultiplier tube (PMT) such as has been developed for stabilization of the Galileo spacecraft as it goes through the Jovian high energy radiation belts, the primary effects of high energy electron and proton radiation that must be resisted are the production of fluorescence and Cerenkov emission. The present PMT envelope is ceramic rather than glass, and employs a special, electron-focusing design which will collect, accelerate and amplify electrons only from desired photocathode areas. Tests in a Co-60 radiation facility have shown that the radiation-hard PMT produces less than 2.5 percent of the radiation noise of a standard PMT.

  12. Statistical Modeling for Radiation Hardness Assurance: Toward Bigger Data

    NASA Technical Reports Server (NTRS)

    Ladbury, R.; Campola, M. J.

    2015-01-01

    New approaches to statistical modeling in radiation hardness assurance are discussed. These approaches yield quantitative bounds on flight-part radiation performance even in the absence of conventional data sources. This allows the analyst to bound radiation risk at all stages and for all decisions in the RHA process. It also allows optimization of RHA procedures for the project's risk tolerance.

  13. A Radiation-Hard Analog Memory In The AVLSI-RA Process

    SciTech Connect

    Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G., Kennedy, E.J., Smith, R.S., Swann, B.K.; Musser, J.A.

    1995-12-31

    A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented.

  14. Simulation of neutron radiation damage in silicon semiconductor devices.

    SciTech Connect

    Shadid, John Nicolas; Hoekstra, Robert John; Hennigan, Gary Lee; Castro, Joseph Pete Jr.; Fixel, Deborah A.

    2007-10-01

    A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.

  15. Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

    NASA Technical Reports Server (NTRS)

    Pugel, Diane

    2011-01-01

    This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

  16. Resonance hard radiation in a gas-loaded FEL

    SciTech Connect

    Gevorgian, L.A.

    1995-12-31

    The process of induced radiation under the condition when the relativistic beam oscillation frequency coincides with the plasma frequency of the FEL filling gas, is investigated. Such a resonance results in a giant enhancement of interaction between electrons and photons providing high gain in the hard FEL frequency region. Meanwhile the spectralwidth of the spontaneous radiation is broadened significantly. A method is proposed for maintaining the synchronism between the electron oscillation frequency and the medium plasma frequency, enabling to transform the electron energy into hard radiation with high efficiency.

  17. Radiative recombination of hot carriers in narrow-gap semiconductors

    SciTech Connect

    Pavlov, N. V.; Zegrya, G. G.

    2012-01-15

    The mechanism of the radiative recombination of hot carriers in narrow-gap semiconductors is analyzed using the example of indium antimonide. It is shown that the CHCC Auger recombination process may lead to pronounced carrier heating at high excitation levels. The distribution functions and concentrations of hot carriers are determined. The radiative recombination rate of hot carriers and the radiation gain coefficient are calculated in terms of the Kane model. It is demonstrated that the radiative recombination of hot carriers will make a substantial contribution to the total radiative recombination rate at high carrier concentrations.

  18. Terahertz radiation from magnetic excitations in diluted magnetic semiconductors.

    PubMed

    Rungsawang, R; Perez, F; Oustinov, D; Gómez, J; Kolkovsky, V; Karczewski, G; Wojtowicz, T; Madéo, J; Jukam, N; Dhillon, S; Tignon, J

    2013-04-26

    We probed, in the time domain, the THz electromagnetic radiation originating from spins in CdMnTe diluted magnetic semiconductor quantum wells containing high-mobility electron gas. Taking advantage of the efficient Raman generation process, the spin precession was induced by low power near-infrared pulses. We provide a full theoretical first-principles description of spin-wave generation, spin precession, and of emission of THz radiation. Our results open new perspectives for improved control of the direct coupling between spin and an electromagnetic field, e.g., by using semiconductor technology to insert the THz sources in cavities or pillars.

  19. Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure

    NASA Astrophysics Data System (ADS)

    Kjaergaard, M.; Nichele, F.; Suominen, H. J.; Nowak, M. P.; Wimmer, M.; Akhmerov, A. R.; Folk, J. A.; Flensberg, K.; Shabani, J.; Palmstrøm, C. J.; Marcus, C. M.

    2016-09-01

    Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e2/h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

  20. Radiation Hardness Assurance (RHA) for Small Missions

    NASA Technical Reports Server (NTRS)

    Campola, Michael J.

    2016-01-01

    Varied mission life and complexity is growing for small spacecraft. Small missions benefit from detailed hazard definition and evaluation as done in the past. Requirements need to flow from the system down to the parts level and aid system level radiation tolerance. RHA is highlighted with increasing COTS usage.

  1. Electromagnetic radiation screening of semiconductor devices for long life applications

    NASA Technical Reports Server (NTRS)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  2. Radiative decay rates of impurity states in semiconductor nanocrystals

    SciTech Connect

    Turkov, Vadim K.; Baranov, Alexander V.; Fedorov, Anatoly V.; Rukhlenko, Ivan D.

    2015-10-15

    Doped semiconductor nanocrystals is a versatile material base for contemporary photonics and optoelectronics devices. Here, for the first time to the best of our knowledge, we theoretically calculate the radiative decay rates of the lowest-energy states of donor impurity in spherical nanocrystals made of four widely used semiconductors: ZnS, CdSe, Ge, and GaAs. The decay rates were shown to vary significantly with the nanocrystal radius, increasing by almost three orders of magnitude when the radius is reduced from 15 to 5 nm. Our results suggest that spontaneous emission may dominate the decay of impurity states at low temperatures, and should be taken into account in the design of advanced materials and devices based on doped semiconductor nanocrystals.

  3. Radiation-hard/high-speed data transmission using optical links

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Abi, B.; Fernando, W.; Kagan, H. P.; Kass, R. D.; Lebbai, M. R. M.; Moore, J. R.; Rizatdinova, F.; Skubic, P. L.; Smith, D. S.

    2009-12-01

    The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We investigate the radiation-hardness of various components for possible application in the data transmission upgrade. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs from various sources using 24 GeV/c protons at CERN. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, especially for the GaAs devices. We have designed the ASICs for the opto-link applications and find that the degradation with radiation is acceptable.

  4. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    SciTech Connect

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have demonstrated

  5. Development of high temperature, high radiation resistant silicon semiconductors

    NASA Technical Reports Server (NTRS)

    Whorl, C. A.; Evans, A. W.

    1972-01-01

    The development of a hardened silicon power transistor for operation in severe nuclear radiation environments at high temperature was studied. Device hardness and diffusion techniques are discussed along with the geometries of hardened power transistor chips. Engineering drawings of 100 amp and 5 amp silicon devices are included.

  6. RD50 Collaboration overview: Development of new radiation hard detectors

    NASA Astrophysics Data System (ADS)

    Kuehn, S.

    2016-07-01

    Silicon sensors are widely used as tracking detectors in high energy physics experiments. This results in several specific requirements like radiation hardness and granularity. Therefore research for highly performing silicon detectors is required. The RD50 Collaboration is a CERN R&D collaboration dedicated to the development of radiation hard silicon devices for application in high luminosity collider experiments. Extensive research is ongoing in different fields since 2001. The collaboration investigates both defect and material characterization, detector characterization, the development of new structures and full detector systems. The report gives selected results of the collaboration and places an emphasis on the development of new structures, namely 3D devices, CMOS sensors in HV technology and low gain avalanche detectors.

  7. Development of a radiation-hard CMOS process

    NASA Technical Reports Server (NTRS)

    Power, W. L.

    1983-01-01

    It is recommended that various techniques be investigated which appear to have the potential for improving the radiation hardness of CMOS devices for prolonged space flight mission. The three key recommended processing techniques are: (1) making the gate oxide thin. It has been shown that radiation degradation is proportional to the cube of oxide thickness so that a relatively small reduction in thickness can greatly improve radiation resistance; (2) cleanliness and contamination control; and (3) to investigate different oxide growth (low temperature dry, TCE and HCL). All three produce high quality clean oxides, which are more radiation tolerant. Technique 2 addresses the reduction of metallic contamination. Technique 3 will produce a higher quality oxide by using slow growth rate conditions, and will minimize the effects of any residual sodium contamination through the introduction of hydrogen and chlorine into the oxide during growth.

  8. Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron

    NASA Technical Reports Server (NTRS)

    Danchenko, V.

    1974-01-01

    Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials. Boron is introduced into insulating gate oxide layer at semiconductor-insulator interface.

  9. Radiation-hard electrical coil and method for its fabrication

    DOEpatents

    Grieggs, R.J.; Blake, R.D.; Gac, F.D.

    1982-06-29

    A radiation-hard insulated electrical coil and method for making the same are disclosed. In accordance with the method, a conductor, preferably copper, is wrapped with an aluminum strip and then tightly wound into a coil. The aluminum-wrapped coil is then annealed to relax the conductor in the coiled configuration. The annealed coil is then immersed in an alkaline solution to dissolve the aluminum strip, leaving the bare conductor in a coiled configuration with all of the windings closely packed yet uniformly spaced from one another. The coil is then insulated with a refractory insulating material. In the preferred embodiment, the coil is insulated by coating it with a vitreous enamel and subsequently potting the enamelled coil in a castable ceramic concrete. The resulting coil is substantially insensitive to radiation and may be operated continuously in high radiation environments for long periods of time.

  10. Radiation hardness of three-dimensional polycrystalline diamond detectors

    SciTech Connect

    Lagomarsino, Stefano Sciortino, Silvio; Bellini, Marco; Corsi, Chiara; Cindro, Vladimir; Kanxheri, Keida; Servoli, Leonello; Morozzi, Arianna; Passeri, Daniele; Schmidt, Christian J.

    2015-05-11

    The three-dimensional concept in particle detection is based on the fabrication of columnar electrodes perpendicular to the surface of a solid state radiation sensor. It permits to improve the radiation resistance characteristics of a material by lowering the necessary bias voltage and shortening the charge carrier path inside the material. If applied to a long-recognized exceptionally radiation-hard material like diamond, this concept promises to pave the way to the realization of detectors of unprecedented performances. We fabricated conventional and three-dimensional polycrystalline diamond detectors, and tested them before and after neutron damage up to 1.2 ×10{sup 16 }cm{sup −2}, 1 MeV-equivalent neutron fluence. We found that the signal collected by the three-dimensional detectors is up to three times higher than that of the conventional planar ones, at the highest neutron damage ever experimented.

  11. Positronics of radiation-induced effects in chalcogenide glassy semiconductors

    SciTech Connect

    Shpotyuk, O.; Kozyukhin, S. A.; Shpotyuk, M.; Ingram, A.; Szatanik, R.

    2015-03-15

    Using As{sub 2}S{sub 3} and AsS{sub 2} glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.

  12. Studying radiation hardness of a cadmium tungstate crystal based radiation detector

    NASA Astrophysics Data System (ADS)

    Shtein, M. M.; Smekalin, L. F.; Stepanov, S. A.; Zatonov, I. A.; Tkacheva, T. V.; Usachev, E. Yu

    2016-06-01

    The given article considers radiation hardness of an X-ray detector used in production of non-destructive testing instruments and inspection systems. In the course of research, experiments were carried out to estimate radiation hardness of a detector based on cadmium tungstate crystal and its structural components individually. The article describes a layout of an experimental facility that was used for measurements of radiation hardness. The radiation dose dependence of the photodiode current is presented, when it is excited by a light flux of a scintillator or by an external light source. Experiments were carried out to estimate radiation hardness of two types of optical glue used in detector production; they are based on silicon rubber and epoxy. With the help of a spectrophotometer and cobalt gun, each of the glue samples was measured for a relative light transmission factor with different wavelengths, depending on the radiation dose. The obtained data are presented in a comprehensive analysis of the results. It was determined, which of the glue samples is most suitable for production of detectors working under exposure to strong radiation.

  13. Isolated hard photon radiation in multijet production at LEP

    NASA Astrophysics Data System (ADS)

    Glover, E. W. N.; Stirling, W. J.

    1992-11-01

    We present a detailed, quantitative analysis of isolated hard photon radiation in multiparton final states at LEP energies. Since a perfectly isolated photon is not an infrared safe quantity different definitions of an “isolated photon” can influence the relative production rates for photon plus jets events. We argue that there is no obvious discrepancy between recent experimental measurements and the theoretical predictions and compute the next-to-leading order corrections to photon +1, 2 jet production, using a clustering algorithm more closely matched to the experimental procedure.

  14. Radiation-hard/high-speed parallel optical links

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Buchholz, P.; Heidbrink, S.; Kagan, H. P.; Kass, R. D.; Moore, J.; Smith, D. S.; Vogt, M.; Ziolkowski, M.

    2016-09-01

    We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

  15. Radiation-hard ASICs for LHC optical data transmission

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Kagan, H. P.; Kass, R. D.; Moore, J. R.; Smith, D. S.

    2010-11-01

    We have designed several ASICs for possible applications in a new ATLAS pixel layer for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL, a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock, and a clock multiplier to produce a higher frequency clock to serialize the data for transmission. These chips were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated chips and the submission has been mostly successful. We irradiated the chips with 24 GeV/c protons at CERN to a dosage of 70 Mrad. We observed no significant degradation except the driver circuit in the VCSEL driver fabricated using the thick oxide process in order to provide sufficient voltage to drive a VCSEL. The degradation is due to the radiation induced large threshold shifts in the PMOS transistors used.

  16. The electromagnetic radiation from semiconductor minerals in orebody

    NASA Astrophysics Data System (ADS)

    Ozawa, M.; Nagahama, H.; Muto, J.; Nagase, T.

    2013-12-01

    In complex ore deposits composing semiconductor minerals, electromagnetic radiation in the radio frequency (30 kHz ~ 3 MHz) is induced by propagation of elastic waves [1]. Semiconductor minerals are divided into n- or p-type. When each p-type and n-type is joined, the resulting junction (p-n junction) has the rectifying property. Many natural orebodies show this property, but it has not been evaluated qualitatively. A lot of p-n junctions exist as which connect in parallel and in series in the orebody [2]. They can be regarded as a single p-n junction at large scale. Hence elucidating the electric property of micro p-n junction is required to understand the semiconductor properties of orebody. To discuss the electromagnetic emission from semiconductor minerals in the orebody associated with tectonic process, we measure the electric property of the semiconductor pyrite. Composition and electric properties of natural semiconductor minerals are heterogeneous due to the presence of impurities and defects. Therefore, it is needed to clarify the properties at each microscopic region. In this research, we apply electroetching method and SEM analysis to acquire composition characteristics and use an indentation probe to reveal microscopic electric properties. Sample of pyrite is from Waga-Sennin mine, Akita prefecture, Japan. The area of cross section is 1.4 cm2 with thickness of 0.38 mm2. In the electrolytic etching, the surface of samples showed etching figures and zonal structures with widths of about 10 -100 μm. According to the SEM analysis, Pb inclusions were observed to be precipitated parallel to crystallographic planes. The heterogeneous change in electric properties of each area was observed to be as etching figure. Thermal probing method clarified that the regions of n-p type differences were also coincidence well to etching figure patterns. P-type regions showed a higher solubility than n-type regions. At p-n junction regions, rectifying property was observed

  17. Novel semiconductor radiation detector based on mercurous halides

    NASA Astrophysics Data System (ADS)

    Chen, Henry; Kim, Joo-Soo; Amarasinghe, Proyanthi; Palosz, Withold; Jin, Feng; Trivedi, Sudhir; Burger, Arnold; Marsh, Jarrod C.; Litz, Marc S.; Wiejewarnasuriya, Priyalal S.; Gupta, Neelam; Jensen, Janet; Jensen, James

    2015-08-01

    The three most important desirable features in the search for room temperature semiconductor detector (RTSD) candidate as an alternative material to current commercially off-the-shelf (COTS) material for gamma and/or thermal neutron detection are: low cost, high performance and long term stability. This is especially important for pager form application in homeland security. Despite years of research, no RTSD candidate so far can satisfy the above 3 features simultaneously. In this work, we show that mercurous halide materials Hg2X2 (X= I, Cl, Br) is a new class of innovative compound semiconductors that is capable of delivering breakthrough advances to COTS radiation detector materials. These materials are much easier to grow thicker and larger volume crystals. They can detect gamma and potentially neutron radiation making it possible to detect two types of radiation with just one crystal material. The materials have wider bandgaps (compared to COTS) meaning higher resistivity and lower leakage current, making this new technology more compatible with available microelectronics. The materials also have higher atomic number and density leading to higher stopping power and better detector sensitivity/efficiency. They are not hazardous so there are no environmental and health concerns during manufacturing and are more stable making them more practical for commercial deployment. Focus will be on Hg2I2. Material characterization and detector performance will be presented and discussed. Initial results show that an energy resolution better than 2% @ 59.6 keV gamma from Am-241 and near 1% @ 662 keV from Cs-137 source can be achieved at room temperature.

  18. Radiative and nonradiative rate fluctuations of single colloidal semiconductor nanocrystals.

    PubMed

    Biebricher, Andreas; Sauer, Markus; Tinnefeld, Philip

    2006-03-23

    Spectrally and time-resolved single-molecule fluorescence spectroscopy was used to investigate fluctuations of the photophysical characteristics of different types of semiconductor nanocrystals (NCs) at room temperature. Correlation of photoluminescence (PL) emission maxima, decay time, and intensity of individual NCs with millisecond time resolution reveals new sources of intensity fluctuations and photophysical properties. In particular, we demonstrate that independent of quenched states spectral diffusion is associated with changes of the radiative rate constant k(r) by means of the quantum-confined Stark effect. Correlation of the different photophysical parameters revealed an intrinsic nonradiative rate and enabled the disentangling of intrinsic and extrinsic nonradiative rate constants. Moreover, it allowed us to assess the PL quantum yield of single NCs. Finally, the presented technique was successfully applied to demonstrate that the addition of antiblinking reagents such as mercaptoethylamine accelerates the observed fluctuations between different photophysical states.

  19. Radiation hardness of COTS EPROMs and E2PROMs

    NASA Astrophysics Data System (ADS)

    Vujisić, Miloš; Stanković, Koviljka; Dolićanin, Edin; Osmokrović, Predrag

    2010-05-01

    This paper examines and compares the effects of exposing commercial, off the shelf erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (E2PROM) components to gamma rays. Results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide evidence that EPROMs have a greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.

  20. Radiation hardness of the storage phosphor europium doped potassium chloride for radiation therapy dosimetry

    SciTech Connect

    Driewer, Joseph P.; Chen, Haijian; Osvet, Andres; Low, Daniel A.; Li, H. Harold

    2011-08-15

    Purpose: An important property of a reusable dosimeter is its radiation hardness, that is, its ability to retain its dosimetric merits after irradiation. The radiation hardness of europium doped potassium chloride (KCl:Eu{sup 2+}), a storage phosphor material recently proposed for radiation therapy dosimetry, is examined in this study. Methods: Pellet-style KCl:Eu{sup 2+} dosimeters, 6 mm in diameter, and 1 mm thick, were fabricated in-house for this study. The pellets were exposed by a 6 MV photon beam or in a high dose rate {sup 137}Cs irradiator. Macroscopic properties, such as radiation sensitivity, dose response linearity, and signal stability, were studied with a laboratory photostimulated luminescence (PSL) readout system. Since phosphor performance is related to the state of the storage centers and the activator, Eu{sup 2+}, in the host lattice, spectroscopic and temporal measurements were carried out in order to explore radiation-induced changes at the microscopic level. Results: KCl:Eu{sup 2+} dosimeters retained approximately 90% of their initial signal strength after a 5000 Gy dose history. Dose response was initially supralinear over the dose range of 100-700 cGy but became linear after 60 Gy. Linearity did not change significantly in the 0-5000 Gy dose history spanned in this study. Annealing high dose history chips resulted in a return of supralinearity and a recovery of sensitivity. There were no significant changes in the PSL stimulation spectra, PSL emission spectra, photoluminescence spectra, or luminescence lifetime, indicating that the PSL signal process remains intact after irradiation but at a reduced efficiency due to reparable radiation-induced perturbations in the crystal lattice. Conclusions: Systematic studies of KCl:Eu{sup 2+} material are important for understanding how the material can be optimized for radiation therapy dosimetry purposes. The data presented here indicate that KCl:Eu{sup 2+} exhibits strong radiation hardness and

  1. National Radiation Hardness Assurance (RHA) Planning For NASA Missions: Updated Guidance

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Pellish, Jonathan Allen

    2014-01-01

    Radiation Hardness Assurance (RHA) is the process of ensuring space system performance in the presence of a space radiation environment. Herein, we present an updated NASA methodology for RHA focusing on content, deliverables and timeframes.

  2. Notional Radiation Hardness Assurance (RHA) Planning For NASA Missions: Updated Guidance

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Pellish, Jonathan A.

    2014-01-01

    Radiation Hardness Assurance (RHA) is the process of ensuring space system performance in the presence of a space radiation environment. Herein, we present an updated NASA methodology for RHA focusing on content, deliverables and timeframes.

  3. Radiation-tolerant optical links for the ATLAS semiconductor tracker

    NASA Astrophysics Data System (ADS)

    Matheson, John; Charlton, David G.; Chu, Ming-lee; Dowell, John D.; Galagedera, Senerath; Homer, Roger J.; Hou, Li-Shing; Jovanovic, Predrag; Kundu, Nikhil N.; Lee, Shih-chang; McMahon, Thomas J.; Macwaters, Craig; Mahout, Gilles; Morrissey, Martin; Rudge, Alan; Skubic, Bjorn J.; Teng, Ping-kun; Wastie, Roy; Weidberg, Anthony R.; Wilson, John A.

    2002-09-01

    The Large Hadron Collider (LHC), currently under construction at CERN, Geneva, will collide proton beams of energy 7 TeV. The high luminosity of the machine will lead to a severe radiation environment for detectors such as ATLAS. The ATLAS Semiconductor Tracker (SCT) must be able to tolerate a radiation field equivalent to an ionising dose of 10 Mrad (Si) and a neutron fluence of 2x1014cm-2 (1MeV,Si) over the 10 year lifetime of the experiment. The SCT is instrumented by silicon microstrip detectors and their front-end chips (ABCDs). Data is transferred from, and control signals to, the ABCDs using multimode optical links carrying light at 840 nm. The incoming timing, trigger and control (TTC) link uses biphase mark encoding to send 40 Mbit/s control signals along with a 40 MHz clock down a single fibre. Optical signals are received by a p-i-n diode and decoded by DORIC chips. Data in electrical form from the ABCDs is used to moderate two VCSELs by means of a VCSEL driver chip (VDC). Each detector module carries 12 ABCDs and is served by two optical fibres for data readout and one for TTC signals. There are 4088 such modules within the SCT. The system performance specifications and architecture are described, followed by test results on individual components and complete links. The optical fibre, active optical components, chips, packaging and interconnects have all been qualified to the necessary radiation levels. This has involved studies of total dose effects, single event upset and ageing at elevated temperatures and details of these studies are presented.

  4. Nano-cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties

    NASA Astrophysics Data System (ADS)

    Medvid', A.; Onufrijevs, P.

    2011-12-01

    The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.

  5. Fault tolerant, radiation hard, high performance digital signal processor

    NASA Technical Reports Server (NTRS)

    Holmann, Edgar; Linscott, Ivan R.; Maurer, Michael J.; Tyler, G. L.; Libby, Vibeke

    1990-01-01

    An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

  6. Radiation-Hard SpaceWire/Gigabit Ethernet-Compatible Transponder

    NASA Technical Reports Server (NTRS)

    Katzman, Vladimir

    2012-01-01

    A radiation-hard transponder was developed utilizing submicron/nanotechnology from IBM. The device consumes low power and has a low fabrication cost. This device utilizes a Plug-and-Play concept, and can be integrated into intra-satellite networks, supporting SpaceWire and Gigabit Ethernet I/O. A space-qualified, 100-pin package also was developed, allowing space-qualified (class K) transponders to be delivered within a six-month time frame. The novel, optical, radiation-tolerant transponder was implemented as a standalone board, containing the transponder ASIC (application specific integrated circuit) and optical module, with an FPGA (field-programmable gate array) friendly parallel interface. It features improved radiation tolerance; high-data-rate, low-power consumption; and advanced functionality. The transponder utilizes a patented current mode logic library of radiation-hardened-by-architecture cells. The transponder was developed, fabricated, and radhard tested up to 1 MRad. It was fabricated using 90-nm CMOS (complementary metal oxide semiconductor) 9 SF process from IBM, and incorporates full BIT circuitry, allowing a loop back test. The low-speed parallel LVCMOS (lowvoltage complementary metal oxide semiconductor) bus is compatible with Actel FPGA. The output LVDS (low-voltage differential signaling) interface operates up to 1.5 Gb/s. Built-in CDR (clock-data recovery) circuitry provides robust synchronization and incorporates two alarm signals such as synch loss and signal loss. The ultra-linear peak detector scheme allows on-line control of the amplitude of the input signal. Power consumption is less than 300 mW. The developed transponder with a 1.25 Gb/s serial data rate incorporates a 10-to-1 serializer with an internal clock multiplication unit and a 10-1 deserializer with internal clock and data recovery block, which can operate with 8B10B encoded signals. Three loop-back test modes are provided to facilitate the built-in-test functionality. The

  7. Total-dose radiation effects data for semiconductor devices, volume 1. [radiation resistance of components for the Galileo Project

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1981-01-01

    Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

  8. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    SciTech Connect

    Harrison, Richard Karl; Howell, Stephen Wayne; Martin, Jeffrey B.; Hamilton, Allister B.

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  9. Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

    SciTech Connect

    Kukushkin, V. A.

    2015-01-15

    The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime.

  10. Total-dose radiation effects data for semiconductor devices (1989 supplement)

    NASA Technical Reports Server (NTRS)

    Martin, Keith E.; Coss, James R.; Goben, Charles A.; Shaw, David C.; Farmanesh, Sam; Davarpanah, Michael M.; Craft, Leroy H.; Price, William E.

    1990-01-01

    Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

  11. Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication

    SciTech Connect

    Lewin, A.A.; Serago, C.F.; Schwade, J.G.; Abitbol, A.A.; Margolis, S.C.

    1984-10-01

    New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.

  12. Effect of gamma radiation on micromechanical hardness of lead-free solder joint

    SciTech Connect

    Paulus, Wilfred; Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu; Yusoff, Wan Yusmawati Wan

    2015-09-25

    Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

  13. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    NASA Technical Reports Server (NTRS)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  14. The Si/CdTe semiconductor camera of the ASTRO-H Hard X-ray Imager (HXI)

    NASA Astrophysics Data System (ADS)

    Sato, Goro; Hagino, Kouichi; Watanabe, Shin; Genba, Kei; Harayama, Atsushi; Kanematsu, Hironori; Kataoka, Jun; Katsuragawa, Miho; Kawaharada, Madoka; Kobayashi, Shogo; Kokubun, Motohide; Kuroda, Yoshikatsu; Makishima, Kazuo; Masukawa, Kazunori; Mimura, Taketo; Miyake, Katsuma; Murakami, Hiroaki; Nakano, Toshio; Nakazawa, Kazuhiro; Noda, Hirofumi; Odaka, Hirokazu; Onishi, Mitsunobu; Saito, Shinya; Sato, Rie; Sato, Tamotsu; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shin`ichiro; Yuasa, Takayuki

    2016-09-01

    The Hard X-ray Imager (HXI) is one of the instruments onboard the ASTRO-H mission [1-4] to be launched in early 2016. The HXI is the focal plane detector of the hard X-ray reflecting telescope that covers an energy range from 5 to 80 keV. It will execute observations of astronomical objects with a sensitivity for point sources as faint as 1/100,000 of the Crab nebula at > 10 keV. The HXI camera - the imaging part of the HXI - is realized by a hybrid semiconductor detector system that consists of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. Here, we present the final design of the HXI camera and report on the development of the flight model. The camera is composed of four layers of Double-sided Silicon Strip Detectors (DSSDs) and one layer of CdTe Double-sided Strip Detector (CdTe-DSD), each with an imaging area of 32 mm×32 mm. The strip pitch of the Si and CdTe sensors is 250 μm, and the signals from all 1280 strips are processed by 40 Application Specified Integrated Circuits (ASICs) developed for the HXI. The five layers of sensors are vertically stacked with a 4 mm spacing to increase the detection efficiency. The thickness of the sensors is 0.5 mm for the Si, and 0.75 mm for the CdTe. In this configuration, soft X-ray photons will be absorbed in the Si part, while hard X-ray photons will go through the Si part and will be detected in the CdTe part. The design of the sensor trays, peripheral circuits, power connections, and readout schemes are also described. The flight models of the HXI camera have been manufactured, tested and installed in the HXI instrument and then on the satellite.

  15. Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

    NASA Astrophysics Data System (ADS)

    Fourches, N. T.; Chipaux, R.

    2015-01-01

    Silicon detectors have gained in popularity since silicon became a widely used electronic semiconductor material. Silicon detectors are used in particle physics as well as imagers for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon based detectors including charged coupled devices (CCDs). Some of this research was performed in the framework of high luminosity particle physics experiments, along with radiation hardness studies of basic semiconductors devices. The building blocks of silicon pixel detectors including CCDs are simple PIN or PN structures partially or totally depleted, or even MOS and APD (Avalanche PhotoDiode) structures. Bulk or surface defects considerably affect the transport of free carriers. We propose here guidelines for pixel design. The method takes into account the properties of defects and will be tested through two pixel structures. The electrical properties of defects can be reduced to basic parameters, which can be introduced in a standard simulation code to make predictive simulations. We include an analytical model for defect build up derived from isochronal annealing experiments. Studying pixels detectors with different geometrical structures and fabricated with various semiconducting materials is made possible with this method. Its purpose is to provide an alternative to tedious and extensive radiation tests on fabricated detectors. Predicting the pixel behaviour w.r.t. defect properties is necessary for the long-term reliability of detectors and for making them radiation hard. A general method for pixel design is introduced and we will show how it can be used for the design of alternative (germanium) pixels.

  16. On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lee, Gyeong Won; Shim, Jong-In; Shin, Dong-Soo

    2016-07-01

    While there have been many discussions on the standard Si pn-diodes, little attention has been paid and confusion still arises on the ideality factor of the radiative recombination current in semiconductor light-emitting diodes (LEDs). In this letter, we theoretically demonstrate and experimentally confirm by using blue and infrared semiconductor LEDs that the ideality factor of the radiative recombination current is unity especially for low-current-density ranges. We utilize the data of internal quantum efficiency measured by the temperature-dependent electroluminescence to separate the radiative current component from the total current.

  17. Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

    NASA Astrophysics Data System (ADS)

    CMS Electromagnetic Calorimeter Group; Adzic, P.; Almeida, N.; Andelin, D.; Anicin, I.; Antunovic, Z.; Arcidiacono, R.; Arenton, M. W.; Auffray, E.; Argiro, S.; Askew, A.; Baccaro, S.; Baffioni, S.; Balazs, M.; Bandurin, D.; Barney, D.; Barone, L. M.; Bartoloni, A.; Baty, C.; Beauceron, S.; Bell, K. W.; Bernet, C.; Besancon, M.; Betev, B.; Beuselinck, R.; Biino, C.; Blaha, J.; Bloch, P.; Borisevitch, A.; Bornheim, A.; Bourotte, J.; Brown, R. M.; Buehler, M.; Busson, P.; Camanzi, B.; Camporesi, T.; Cartiglia, N.; Cavallari, F.; Cecilia, A.; Chang, P.; Chang, Y. H.; Charlot, C.; Chen, E. A.; Chen, W. T.; Chen, Z.; Chipaux, R.; Choudhary, B. C.; Choudhury, R. K.; Cockerill, D. J. A.; Conetti, S.; Cooper, S.; Cossutti, F.; Cox, B.; Cussans, D. G.; Dafinei, I.; Da Silva Di Calafiori, D. R.; Daskalakis, G.; David, A.; Deiters, K.; Dejardin, M.; De Benedetti, A.; Della Ricca, G.; Del Re, D.; Denegri, D.; Depasse, P.; Descamps, J.; Diemoz, M.; Di Marco, E.; Dissertori, G.; Dittmar, M.; Djambazov, L.; Djordjevic, M.; Dobrzynski, L.; Dolgopolov, A.; Drndarevic, S.; Drobychev, G.; Dutta, D.; Dzelalija, M.; Elliott-Peisert, A.; El Mamouni, H.; Evangelou, I.; Fabbro, B.; Faure, J. L.; Fay, J.; Fedorov, A.; Ferri, F.; Franci, D.; Franzoni, G.; Freudenreich, K.; Funk, W.; Ganjour, S.; Gascon, S.; Gataullin, M.; Gentit, F. X.; Ghezzi, A.; Givernaud, A.; Gninenko, S.; Go, A.; Gobbo, B.; Godinovic, N.; Golubev, N.; Govoni, P.; Grant, N.; Gras, P.; Haguenauer, M.; Hamel de Monchenault, G.; Hansen, M.; Haupt, J.; Heath, H. F.; Heltsley, B.; Hintz, W.; Hirosky, R.; Hobson, P. R.; Honma, A.; Hou, G. W. S.; Hsiung, Y.; Huhtinen, M.; Ille, B.; Ingram, Q.; Inyakin, A.; Jarry, P.; Jessop, C.; Jovanovic, D.; Kaadze, K.; Kachanov, V.; Kailas, S.; Kataria, S. K.; Kennedy, B. W.; Kokkas, P.; Kolberg, T.; Korjik, M.; Krasnikov, N.; Krpic, D.; Kubota, Y.; Kuo, C. M.; Kyberd, P.; Kyriakis, A.; Lebeau, M.; Lecomte, P.; Lecoq, P.; Ledovskoy, A.; Lethuillier, M.; Lin, S. W.; Lin, W.; Litvine, V.; Locci, E.; Longo, E.; Loukas, D.; Luckey, P. D.; Lustermann, W.; Ma, Y.; Malberti, M.; Malclès, J.; Maletic, D.; Manthos, N.; Maravin, Y.; Marchica, C.; Marinelli, N.; Markou, A.; Markou, C.; Marone, M.; Matveev, V.; Mavrommatis, C.; Meridiani, P.; Milenovic, P.; Miné, P.; Missevitch, O.; Mohanty, A. K.; Moortgat, F.; Musella, P.; Musienko, Y.; Nardulli, A.; Nash, J.; Nedelec, P.; Negri, P.; Newman, H. B.; Nikitenko, A.; Nessi-Tedaldi, F.; Obertino, M. M.; Organtini, G.; Orimoto, T.; Paganoni, M.; Paganini, P.; Palma, A.; Pant, L.; Papadakis, A.; Papadakis, I.; Papadopoulos, I.; Paramatti, R.; Parracho, P.; Pastrone, N.; Patterson, J. R.; Pauss, F.; Peigneux, J.-P.; Petrakou, E.; Phillips, D. G., II; Piroué, P.; Ptochos, F.; Puljak, I.; Pullia, A.; Punz, T.; Puzovic, J.; Ragazzi, S.; Rahatlou, S.; Rander, J.; Razis, P. A.; Redaelli, N.; Renker, D.; Reucroft, S.; Ribeiro, P.; Rogan, C.; Ronquest, M.; Rosowsky, A.; Rovelli, C.; Rumerio, P.; Rusack, R.; Rusakov, S. V.; Ryan, M. J.; Sala, L.; Salerno, R.; Schneegans, M.; Seez, C.; Sharp, P.; Shepherd-Themistocleous, C. H.; Shiu, J. G.; Shivpuri, R. K.; Shukla, P.; Siamitros, C.; Sillou, D.; Silva, J.; Silva, P.; Singovsky, A.; Sirois, Y.; Sirunyan, A.; Smith, V. J.; Stöckli, F.; Swain, J.; Tabarelli de Fatis, T.; Takahashi, M.; Tancini, V.; Teller, O.; Theofilatos, K.; Thiebaux, C.; Timciuc, V.; Timlin, C.; Titov, M.; Topkar, A.; Triantis, F. A.; Troshin, S.; Tyurin, N.; Ueno, K.; Uzunian, A.; Varela, J.; Verrecchia, P.; Veverka, J.; Virdee, T.; Wang, M.; Wardrope, D.; Weber, M.; Weng, J.; Williams, J. H.; Yang, Y.; Yaselli, I.; Yohay, R.; Zabi, A.; Zelepoukine, S.; Zhang, J.; Y Zhang, L.; Zhu, K.; Y Zhu, R.

    2010-03-01

    Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

  18. Influence of design variables on radiation hardness of silicon MINP solar cells

    NASA Technical Reports Server (NTRS)

    Anderson, W. A.; Solaun, S.; Rao, B. B.; Banerjee, S.

    1985-01-01

    Metal-insulator-N/P silicon (MINP) solar cells were fabricated using different substrate resistivity values, different N-layer designs, and different I-layer designs. A shallow junction into an 0.3 ohm-cm substrate gave best efficiency whereas a deeper junction into a 1 to 4 ohm-cm substrate gave improved radiation hardness. I-layer design variation did little to influence radiation hardness.

  19. Comparison of the radiation hardness of various VLSI technologies for defense applications

    SciTech Connect

    Gibbon, C.F.

    1985-01-01

    In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems.

  20. Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons.

    PubMed

    Medvid, Artur; Onufrijevs, Pavels; Mychko, Alexander

    2011-01-01

    On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity. PMID:22060172

  1. Hardness measurements of silicone rubber and polyurethane rubber cured by ionizing radiation

    NASA Astrophysics Data System (ADS)

    Basfar, Ahmed Ali

    1997-12-01

    This work investigates the hardness of both silicone rubber and polyurethane rubber cured by ionizing radiation. Shore A hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions. A small amount of a chemical curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicone rubber improved in hardness with increasing absorbed dose, whereas hardness remained constant over a broad range of absorbed doses for polyurethane rubber.

  2. Effect Of Clock Mode On Radiation Hardness Of An ADC

    NASA Technical Reports Server (NTRS)

    Lee, Choon I.; Rax, Bernie G.; Johnston, Allan H.

    1995-01-01

    Report discusses techniques for testing and evaluating effects of total dosages of ionizing radiation on performances of high-resolution successive-approximation analog-to-digital converters (ADCs), without having to test each individual bit or transition. Reduces cost of testing by reducing tests to few critical parametric measurements, from which one determines approximate radiation failure levels providing good approximations of responses of converters for purpose of total-dose-radiation evaluations.

  3. Method for mapping charge pulses in semiconductor radiation detectors

    SciTech Connect

    Prettyman, T.H.

    1998-12-01

    An efficient method for determining the distribution of charge pulses produced by semiconductor detectors is presented. The method is based on a quasi-steady-state model for semiconductor detector operation. A complete description of the model and underlying assumptions is given. Mapping of charge pulses is accomplished by solving an adjoint carrier continuity equation. The solution of the adjoint equation yields Green`s function, a time- and position-dependent map that contains all possible charge pulses that can be produced by the detector for charge generated at discrete locations (e.g., by gamma-ray interactions). Because the map is generated by solving a single, time-dependent problem, the potential for reduction in computational effort over direct mapping methods is significant, particularly for detectors with complex electrode structures. In this paper, the adjoint equation is derived and the mapping method is illustrated for a simple case.

  4. Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

    SciTech Connect

    Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

    2006-08-15

    We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering.

  5. Radiation hardness of Efratom M-100 rubidium frequency standard

    NASA Technical Reports Server (NTRS)

    English, T. C.; Vorwerk, H.; Rudie, N. J.

    1983-01-01

    The effects of nuclear radiation on rubidium gas cell frequency standards and components are presented, including the results of recent tests where a continuously operating rubidium frequency standard (Effratom, Model M-100) was subjected to simultaneous neutron/gamma radiation. At the highest neutron fluence 7.5 10 to the 12th power n/sq cm and total dose 11 krad(Si) tested, the unit operated satisfactorily; the total frequency change over the 2 1/2 hour test period due to all causes, including repeated retraction from and insertion into the reactor, was less than 1 x 10 to the -10th power. The effects of combined neutron/gamma radiation on rubidium frequency standard physics package components were also studied, and the results are presented.

  6. Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1985-01-01

    Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months.

  7. Present status and prospects of R&D of radiation-resistant semiconductor devices at JAEA

    NASA Astrophysics Data System (ADS)

    Itoh, H.

    2013-05-01

    Research and development of radiation resistant semiconductor devices have been performed at Japan Atomic Energy Agency (JAEA) for their application to electronic system used in harsh environments like space, accelerator and nuclear facilities. Such devices are also indispensable for robots and equipment necessary for decommissioning of the damaged reactors at Fukushima Daiichi Nuclear Power Plants. For this purpose, we have fabricated transistors based on a wide band-gap semiconductor SiC and examined their radiation degradation. As a result, SiC-based transistors exhibited no significant degradation up to 1MGy, indicating their excellent radiation resistance. Recent our R&Ds of radiation resistant devices based on SiC are summarized and reviewed.

  8. Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

    NASA Astrophysics Data System (ADS)

    Beringer, J.; Borer, K.; Mommsen, R. K.; Nickerson, R. B.; Weidberg, A. R.; Monnier, E.; Hou, H. Q.; Lear, K. L.

    1999-10-01

    We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5×10 14 n (1 MeV eq. in GaAs)/cm 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50°C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From our results we estimate the signal-to-noise ratio and the failure rate of optical links using LEDs developed specifically for application at LHC.

  9. Radiation detection system using semiconductor detector with differential carrier trapping and mobility

    DOEpatents

    Whited, Richard C.

    1981-01-01

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI.sub.2, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  10. FPIX2: A radiation-hard pixel readout chip for BTeV

    SciTech Connect

    David C. Christian et al.

    2000-12-11

    A radiation-hard pixel readout chip, FPIX2, is being developed at Fermilab for the recently approved BTeV experiment. Although designed for BTeV, this chip should also be appropriate for use by CDF and DZero. A short review of this development effort is presented. Particular attention is given to the circuit redesign which was made necessary by the decision to implement FPIX2 using a standard deep-submicron CMOS process rather than an explicitly radiation-hard CMOS technology, as originally planned. The results of initial tests of prototype 0.25{micro} CMOS devices are presented, as are plans for the balance of the development effort.

  11. Radiation hardness of n-GaN schottky diodes

    SciTech Connect

    Lebedev, A. A. Belov, S. V.; Mynbaeva, M. G.; Strel’chuk, A. M.; Bogdanova, E. V.; Makarov, Yu. N.; Usikov, A. S.; Kurin, S. Yu.; Barash, I. S.; Roenkov, A. D.; Kozlovski, V. V.

    2015-10-15

    Schottky-barrier diodes with a diameter of ∼10 µm are fabricated on n-GaN epitaxial films grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates. The changes in the parameters of the diodes under irradiation with 15 MeV protons are studied. The carrier removal rate was found to be 130–145 cm{sup –1}. The linear nature of the dependence N = f(D) (N is the carrier concentration, and D, the irradiation dose) shows that compensation of the material is associated with transitions of electrons from shallow donors to deep acceptor levels which are related to primary radiation defects.

  12. Radiation-hard silicon gate bulk CMOS cell family

    SciTech Connect

    Gibbon, C. F.; Habing, D. H.; Flores, R. S.

    1980-01-01

    A radiation-hardened bulk silicon gate CMOS technology and a topologically simple, high-performance dual-port cell family utilizing this process have been demonstrated. Additional circuits, including a random logic circuit containing 4800 transistors on a 236 x 236 mil die, are presently being designed and processed. Finally, a joint design-process effort is underway to redesign the cell family in reduced design rules; this results in a factor of 2.5 cell size reduction and a factor of 3 decrease in chip interconnect area. Cell performance is correspondingly improved.

  13. Investigation of radiation effects on semiconductor devices and integrated circuits

    NASA Astrophysics Data System (ADS)

    Shanfield, Zef; Srour, Joseph R.; Moriwaki, Melvin; Kitazaki, Kerry S.; Hartmann, Robert A.

    1988-09-01

    Results of a study of radiation effects on electronic materials, devices, and integrated circuits are presented in this report. Emphasis was placed on determining the underlying mechanisms responsible for observed radiation effects with a view toward gaining understanding of value in the development of radiation-hardened devices. Measurements and analyses were made of the effects of single energetic neutrons and protons on silicon integrated circuits. In addition, a detailed description is given of the effects of radiation-induced displacement damage on device depletion regions. Single event upset studies included charge collection and transient current measurements on Si and GaAs devices following a single alpha-particle strike. The angular dependence of charge funneling was also investigated. The mechanisms of ionizing radiation effects on Si MOS devices were explored in detail using the thermally stimulated current technique and other measurement approaches. Data obtained by several techniques show that use of the radiation-induced shift of the capacitance-voltage curve at midgap is not generally valid for determining oxide trapped charge.

  14. A source of hard X-ray radiation based on hybrid X pinches

    NASA Astrophysics Data System (ADS)

    Shelkovenko, T. A.; Pikuz, S. A.; Hoyt, C. L.; Cahill, A. D.; Atoyan, L.; Hammer, D. A.; Tilikin, I. N.; Mingaleev, A. R.; Romanova, V. M.; Agafonov, A. V.

    2016-10-01

    X pinches are well known to produce very small, dense plasma pinches ("hot spots") that emit sub-nanosecond bursts of 1-8 keV radiation. Hard X-ray radiation in the range from 8 to 300 keV or more is also emitted, and only a small portion of which is associated with the X-pinch hot spot. In hybrid X-pinches (HXP), the 10 ns hard X-ray pulse is terminated by fast closure of the gap between the two conical electrodes of the HXP by rapidly expanding electrode plasmas. The temporal, spectral, and spatial properties of this higher energy radiation have been studied. This radiation was used for point-projection imaging with magnification between 1.5 and 6, and spatial resolution of 20-100 μm was demonstrated.

  15. Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

    NASA Technical Reports Server (NTRS)

    Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

    2015-01-01

    Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.

  16. Surface plasmon-polariton resonance at diffraction of THz radiation on semiconductor gratings

    NASA Astrophysics Data System (ADS)

    Spevak, I. S.; Kuzmenko, A. A.; Tymchenko, M.; Gavrikov, V. K.; Shulga, V. M.; Feng, J.; Sun, H. B.; Kamenev, Yu. E.; Kats, A. V.

    2016-08-01

    Resonance diffraction of THz hidrogen cyanide laser radiation on a semiconductor (InSb) grating is studied both experimentally and theoretically. The specular reflectivity suppression due to the resonance excitation of the THz surface plasmon-polariton is observed on a pure semiconductor grating and on semiconductor gratings covered with a thin dielectric layer. The dielectric coating of the grating results in the resonance shift and widening depending both on the layer thickness and dielectric properties. A simple analytical theory of the resonance diffraction on rather shallow gratings covered with a dielectric layer is presented, and the results are in a good accordance with the experimental data. Analytical expressions for the resonance shift and broadening are essential for the resonance properties understanding and useful for sensing data interpretation of the agents deposited on the grating surface.

  17. Gluon radiation off hard quarks in a nuclear environment: opacity expansion

    NASA Astrophysics Data System (ADS)

    Wiedemann, Urs Achim

    2000-11-01

    We study the relation between the Baier-Dokshitzer-Mueller-Peigné-Schiff (BDMPS) and Zakharov formalisms for medium-induced gluon radiation off hard quarks, and the radiation off very few scattering centers. Based on the non-abelian Furry approximation for the motion of hard partons in a spatially extended colour field, we derive a compact diagrammatic and explicitly colour trivial expression for the N th order term of the k⊥ -differential gluon radiation cross section in an expansion in the opacity of the medium. Resumming this quantity to all orders in opacity, we obtain Zakharov's path-integral expression (supplemented with a regularization prescription). This provides a new proof of the equivalence of the BDMPS and Zakharov formalisms which extends previous arguments to the k⊥ -differential cross section. We give explicit analytical results up to third order in opacity for both the gluon radiation cross section of free incoming and of in-medium produced quarks. The N th order term in the opacity expansion of the radiation cross section is found to be a convolution of the radiation associated to N -fold rescattering and a readjustment of the probabilities that rescattering occurs with less than N scattering centers. Both informations can be disentangled by factorizing out of the radiation cross section a term which depends only on the mean free path of the projectile. This allows to infer analytical expressions for the totally coherent and totally incoherent limits of the radiation cross section to arbitrary orders in opacity.

  18. Impact of Laser Radiation on Microhardness of a Semiconductor

    SciTech Connect

    Medvid', A.; Onufrijevs, P.; Chiradze, G.; Muktupavela, F.

    2011-12-23

    It was found that strongly absorbed Nd:YAG laser radiation leads to a non-monotonous dependence of microhardness of p- and n-type Si crystals on laser radiation. This dependence is characterized by two maxima for p-Si and one maximum for n-Si crystals. In both cases the increase of microhardness at higher laser intensity is explained by formation of mechanically compressed layer at the irradiated surface due to concentration of the interstitial atoms of Si at the surface in temperature gradient field. The decrease of the microhardness is explained by formation of nano-cones as a result of plastic deformation of the mechanically stressed layer. The additional maximum at lower laser intensity for p-Si crystal is explained by p-n type inversion of Si conductivity.

  19. Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

    NASA Astrophysics Data System (ADS)

    Cojocariu, L. N.; Placinta, V. M.; Dumitru, L.

    2016-03-01

    A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

  20. Radiation-hard power electronics for the ATLAS New Small Wheel

    NASA Astrophysics Data System (ADS)

    Ameel, J.; Amidei, D.; Baccaro, S.; Citterio, M.; Cova, P.; Delmonte, N.; Sekhon Edgar, K.; Edgar, R.; Fiore, S.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Yang, Y.

    2015-01-01

    The New Small Wheel (NSW) is an upgrade for the ATLAS detector to provide enhanced triggering and reconstruction of muons in the forward region. The large LV power demands of the NSW necessitate a point-of-load architecture with on-detector power conversion. The radiation load and magnetic field of this environment, while significant, are nevertheless still in the range where commercial-off-the-shelf power devices may suffice. We present studies on the radiation-hardness and magnetic-field tolerance of several candidate buck converters and linear regulators. Device survival and performance are characterized when exposed to gamma radiation, neutrons, protons and magnetic fields.

  1. Radiation Hard Active Media R&D for CMS Hadron Endcap Calorimetry

    NASA Astrophysics Data System (ADS)

    Tiras, Emrah; CMS-HCAL Collaboration

    2015-04-01

    The High Luminosity LHC era imposes unprecedented radiation conditions on the CMS detectors targeting a factor of 5-10 higher than the LHC design luminosity. The CMS detectors will need to be upgraded in order to withstand these conditions yet maintain/improve the physics measurement capabilities. One of the upgrade options is reconstructing the CMS Endcap Calorimeters with a shashlik design electromagnetic section and replacing active media of the hadronic section with radiation-hard scintillation materials. In this context, we have studied various radiation-hard materials such as Polyethylene Naphthalate (PEN), Polyethylene Terephthalate (PET), HEM and quartz plates coated with various organic materials such as p-Terphenyl (pTp), Gallium doped Zinc Oxide (ZnO:Ga) and Anthracene. Here we discuss the related test beam activities, laboratory measurements and recent developments.

  2. Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

    NASA Technical Reports Server (NTRS)

    Juhasz, Albert J.; Tew, Roy C.; Schwarze, Gene E.

    1998-01-01

    The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

  3. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    NASA Technical Reports Server (NTRS)

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  4. Microprocessing of human hard tooth tissues surface by mid-infrared erbium lasers radiation

    NASA Astrophysics Data System (ADS)

    Belikov, Andrey V.; Shatilova, Ksenia V.; Skrypnik, Alexei V.

    2015-03-01

    A new method of hard tooth tissues laser treatment is described. The method consists in formation of regular microdefects on tissue surface by mid-infrared erbium laser radiation with propagation ratio M2<2 (Er-laser microprocessing). Proposed method was used for preparation of hard tooth tissues surface before filling for improvement of bond strength between tissues surface and restorative materials, microleakage reduction between tissues surface and restorative materials, and for caries prevention as a result of increasing microhardness and acid resistance of tooth enamel.

  5. Ultra-low-power radiation hard ADC for particle detector readout applications

    NASA Astrophysics Data System (ADS)

    Mikkola, E. O.; Swaminathan, V.; Sivakumar, B.; Barnaby, H. J.

    2013-04-01

    Radiation hard analog to digital converter (ADC) has been designed for future high energy physics experiments. The ADC has been designed in a commercial 130 nm CMOS process and it achieves 12-bit resolution, 25 MS/s sampling speed, 15 mW power consumption and hardness to at least 1.8 Megarad(Si) of total ionizing dose (TID). 16 ADC channels will be placed on one packaged silicon chip. The readout of the Liquid Argon Calorimeter of the ATLAS detector in the planned High-Luminosity Large Hadron Collider is one possible application for this ADC.

  6. Radiation and Magnetic Field Effects on New Semiconductor Power Devices for Hl-Lhc Experiments

    NASA Astrophysics Data System (ADS)

    Fiore, S.; Abbate, C.; Baccaro, S.; Busatto, G.; Citterio, M.; Iannuzzo, F.; Lanza, A.; Latorre, S.; Lazzaroni, M.; Sanseverino, A.; Velardi, F.

    2014-06-01

    The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.

  7. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak.

    PubMed

    Rasouli, C; Pourshahab, B; Hosseini Pooya, S M; Orouji, T; Rasouli, H

    2014-05-01

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points--three TLDs per point--to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  8. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    NASA Astrophysics Data System (ADS)

    Rasouli, C.; Pourshahab, B.; Hosseini Pooya, S. M.; Orouji, T.; Rasouli, H.

    2014-05-01

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points - three TLDs per point - to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  9. Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

    SciTech Connect

    Rasouli, C.; Pourshahab, B.; Rasouli, H.; Hosseini Pooya, S. M.; Orouji, T.

    2014-05-15

    In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

  10. Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

  11. Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

    NASA Technical Reports Server (NTRS)

    Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

    1986-01-01

    Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

  12. FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)

    SciTech Connect

    Johnson, Bradley R.; Riley, Brian J.; Crum, Jarrod V.; Sundaram, S. K.; Henager, Charles H.; Zhang, Yanwen; Shutthanandan, V.

    2007-01-01

    We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.

  13. Effect of gate oxide thickness on the radiation hardness of silicon-gate CMOS

    SciTech Connect

    Nordstrom, T.V.; Gibbon, C.F.

    1981-01-01

    Significant improvements have been made in the radiation hardness of silicon-gate CMOS by reducing the gate oxide thickness. The device studied is an 8-bit arithmetic logic unit designed with Sandia's Expanded Linear Array (ELA) standard cells. Devices with gate oxide thicknesses of 400, 570 (standard), and 700 A were fabricated. Irradiations were done at a dose rate of 2 x 10/sup 6/ rads (Si) per hour. N- and P-channel maximum threshold shifts were reduced by 0.3 and 1.2 volts, respectively, for the thinnest oxide. Approximately, a linear relationship is found for threshold shift versus thickness. The functional radiation hardness of the full integrated circuit was also measured.

  14. Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

    NASA Astrophysics Data System (ADS)

    Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

    2013-09-01

    Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

  15. Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

    NASA Technical Reports Server (NTRS)

    Kerns, D. V., Jr.; Cook, K. B., Jr.

    1978-01-01

    A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

  16. Overview of the recent activities of the RD50 collaboration on radiation hardening of semiconductor detectors for the sLHC

    NASA Astrophysics Data System (ADS)

    Casse, Gianluigi

    2009-01-01

    The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large hadron collider (LHC) is 10 16 1 MeV neutron equivalent (n eq) cm -2. This is about an order of magnitude higher than the maximum dose for the most exposed silicon detectors in the current machine. RD50 investigates the radiation hardening of silicon sensors from many angles: improvement of the intrinsic tolerance of the substrate material, optimisation of the readout geometry and study of novel design of detectors. A review of some of the recent activities within RD50 is here presented.

  17. The role of radiation hard solar cells in minimizing the costs of global satellite communication systems

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.; Walters, Robert J.; Messenger, Scott R.; Burke, Edward A.

    1996-01-01

    An analysis embodied in a PC computer program is presented, which quantitatively demonstrates how the availability of radiation hard solar cells can help minimize the cost of a global satellite communications system. An important distinction between the currently proposed systems, such as Iridium, Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation at orbital altitudes within the earth's radiation belts (10(exp 3) to 10(exp 4)km) can reduce the total cost of a system by several hundred percent, so long as radiation hard components including solar cells can be used. A detailed evaluation of the predicted performance of photovoltaic arrays using several different planar solar cell technologies is given, including commercially available Si and GaAs/Ge, and InP/Si which is currently under development. Several examples of applying the program are given, which show that the end of life (EOL) power density of different technologies can vary by a factor of ten for certain missions. Therefore, although a relatively radiation-soft technology can usually provide the required EOL power by simply increasing the size of the array, the impact upon the total system budget could be unacceptable, due to increased launch and hardware costs. In aggregate, these factors can account for more than a 10% increase in the total system cost. Since the estimated total costs of proposed global-coverage systems range from $1B to $9B, the availability of radiation-hard solar cells could make a decisive difference in the selection of a particular constellation architecture.

  18. On the nature of the sources of hard pulse X-ray radiation

    NASA Technical Reports Server (NTRS)

    Shklovskiy, I. S.

    1978-01-01

    Besides the identified sources of cosmic pulse X-ray radiation with globular clusters NGC 6624, NGC 1851 and MXB 1730-335 several new identifications were made. The source in Norma was probably identified with globular cluster NGC 5927, the source in Aquila with globular cluster NGC 6838 (M71), and the source in Puppis with globular cluster NGC 2298. Gamma pulses discovered by the Vela satellites and X-ray pulses thoroughly measured by the SAS-3, Ariel-5, and ANS satellites are thought to be the same phenomenon. The sources of such a radiation must be some kind of peculiarity at the central part of globular clusters; it is most probably a massive black hole. The sources of hard pulse radiation which cannot be identified with globular clusters are considered to be a new kind of galactic object, invisible globular clusters, which are naked nuclei of globular clusters.

  19. Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter

    NASA Astrophysics Data System (ADS)

    Qiang, Yi; Zorn, Carl; Barbosa, Fernando; Smith, Elton

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am-Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.

  20. Radiation Hardness Tests of SiPMs for the JLab Hall D Barrel Calorimeter

    SciTech Connect

    Yi Qiang, Carl Zorn, Fernando Barbosa, Elton Smith

    2013-01-01

    We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed

  1. EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Low-threshold generation of harmonics and hard x radiation in a laser plasma. 2. Multipeak generation

    NASA Astrophysics Data System (ADS)

    Apollonov, V. V.; Derzhavin, S. I.; Kazakov, K. Kh

    1993-02-01

    The conditions for the generation of hard x radiation with a multipeak structure in a plasma pumped by a long pulse from a free-running CO2 laser at a low intensity (q≲10 GW/cm2) have been studied. This x-ray generation had been observed in a previous study by the present authors. It is shown that this generation of hard x radiation with a multipeak structure leads to a more than tenfold increase in the yield of hard x radiation per laser pulse, under optimum conditions. This increase results from the additional peaks in the x-ray signal. An explanation of this effect is proposed.

  2. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    PubMed

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation. PMID:25273189

  3. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    SciTech Connect

    Wang, C. Wang, F.; Cao, J. C.

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  4. Radiation hardness tests of GaAs amplifiers operated in liquid argon in the ATLAS calorimeter

    NASA Astrophysics Data System (ADS)

    Ban, J.; Brettel, H.; Cheplakov, A.; Cwienk, W.; Fent, J.; Golikov, V.; Golubyh, S.; Jakobs, K.; Kukhtin, V.; Kulagin, E.; Kurchaninov, L.; Ladygin, E.; Luschikov, V.; Oberlack, H.; Obudovsky, V.; Schacht, P.; Shalyugin, A.; Stiegler, U.; Zweimüller, T.

    2008-09-01

    Highly integrated Gallium Arsenide (GaAs) chips of preamplifiers and summing amplifiers have been exposed to high fluence of fast neutrons and γ-dose at the IBR-2 reactor in Dubna. A stable performance of the electronics has been demonstrated up to a fluence of 5×1014 n cm-2 and a γ-dose of 55 kGy. The radiation hardness tests confirm the applicability of the preamplifiers for more than 10 years operation in the ATLAS hadronic end-cap calorimeter at LHC.

  5. Foreign technology assessment: Environmental evaluation of a radiation-hard oscillator/divider

    NASA Astrophysics Data System (ADS)

    Dvorack, M. A.

    1993-03-01

    Salford Electrical Instruments, Ltd., and the General Electric Company's Hirst Research Center, under contract to the United Kingdom's (UK) Ministry of Defence, developed a radiation-hard, leadless chip-carrier-packaged oscillator/divider. Two preproduction clocks brought to Sandia National Laboratories (SNL) by a potential SNL customer underwent mechanical and thermal environmental evaluation. Because of the subsequent failure of one device and the deteriorating condition of another device, the devices were not subjected to radiation tests. The specifics of the environmental evaluation performed on these two clocks and the postmortem analysis of one unit, which ultimately failed, are described. Clock startup time versus temperature studies were also performed and compared to an SNL-designed clock having the same fundamental frequency.

  6. The role of radiation hard solar cells in minimizing the costs of global satellite communications systems

    NASA Technical Reports Server (NTRS)

    Summers, Geoffrey P.; Walters, Robert J.; Messenger, Scott R.; Burke, Edward A.

    1995-01-01

    An analysis embodied in a PC computer program is presented which quantitatively demonstrates how the availability of radiation hard solar cells can minimize the cost of a global satellite communication system. The chief distinction between the currently proposed systems, such as Iridium Odyssey and Ellipsat, is the number of satellites employed and their operating altitudes. Analysis of the major costs associated with implementing these systems shows that operation within the earth's radiation belts can reduce the total system cost by as much as a factor of two, so long as radiation hard components including solar cells, can be used. A detailed evaluation of several types of planar solar cells is given, including commercially available Si and GaAs/Ge cells, and InP/Si cells which are under development. The computer program calculates the end of life (EOL) power density of solar arrays taking into account the cell geometry, coverglass thickness, support frame, electrical interconnects, etc. The EOL power density can be determined for any altitude from low earth orbit (LEO) to geosynchronous (GEO) and for equatorial to polar planes of inclination. The mission duration can be varied over the entire range planned for the proposed satellite systems. An algorithm is included in the program for determining the degradation of cell efficiency for different cell technologies due to proton and electron irradiation. The program can be used to determine the optimum configuration for any cell technology for a particular orbit and for a specified mission life. Several examples of applying the program are presented, in which it is shown that the EOL power density of different technologies can vary by an order of magnitude for certain missions. Therefore, although a relatively radiation soft technology can be made to provide the required EOL power by simply increasing the size of the array, the impact on the total system budget could be unacceptable, due to increased launch and

  7. Fabrication process development for high-purity germanium radiation detectors with amorphous semiconductor contacts

    NASA Astrophysics Data System (ADS)

    Looker, Quinn

    High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray spectroscopy, offering excellent energy resolution with large detector sizes for high radiation detection efficiency. Although a robust fabrication process has been developed, improvement is needed, especially in developing electrical contact and surface passivation technology for position-sensitive detectors. A systematic study is needed to understand how the detector fabrication process impacts detector performance and reliability. In order to provide position sensitivity, the electrical contacts are segmented to form multiple electrodes. This segmentation creates new challenges in the fabrication process and warrants consideration of additional detector effects related to the segmentation. A key area of development is the creation of the electrical contacts in a way that enables reliable operation, provides low electronic noise, and allows fine segmentation of electrodes, giving position sensitivity for radiation interactions in the detector. Amorphous semiconductor contacts have great potential to facilitate new HPGe detector designs by providing a thin, high-resistivity surface coating that is the basis for electrical contacts that block both electrons and holes and can easily be finely segmented. Additionally, amorphous semiconductor coatings form a suitable passivation layer to protect the HPGe crystal surface from contamination. This versatility allows a simple fabrication process for fully passivated, finely segmented detectors. However, the fabrication process for detectors with amorphous semiconductors is not as highly developed as for conventional technologies. The amorphous semiconductor layer properties can vary widely based on how they are created and these can translate into varying performance of HPGe detectors with these contacts. Some key challenges include

  8. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    SciTech Connect

    Qureshi, S.

    1991-01-01

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

  9. EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Low-threshold generation of harmonics and hard x radiation in a laser plasma. 1. Single-peak generation

    NASA Astrophysics Data System (ADS)

    Apollonov, V. V.; Derzhavin, S. I.; Kazakov, K. Kh

    1993-02-01

    A source of hard x radiation based on a laser plasma has been studied under conditions such that parametric instabilities are driven in the plasma at low intensities of the pump radiation (below 10 GW/cm2). A qualitative interpretation of the observed effects is offered.

  10. Evaluation of radiation damage to Metal-Oxide-Semiconductor (MOS) devices

    NASA Astrophysics Data System (ADS)

    1982-12-01

    The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on the radiation hardness, or resistivity to damage, of MOS capacitors. Toward this end, the following tasks were performed: Construction of capacitor TO-5 packages for device evaluation; The experimental determination of the 1 MHz capacitance-voltage bias curves for both the pre- and post-irradiated capacitors; Evaluation of the change in Flat Band Voltage (Delta V sub fb) for the pre- and post-radiation stressed devices; Compilation of all 1 MHz data for cataloging purposes and the establishment of a benchmark for the new computer automated test system; and Reported data to the Contracting Officer's Technical Representative (COTR) on a case-by-case basis, as time was of the essence.

  11. Harmonic modulation of radiation of an external-feedback semiconductor laser

    SciTech Connect

    Sukharev, Aleksandr G; Napartovich, A P

    2007-02-28

    The appearance of the harmonic modulation regime at the Hopf bifurcation point is described analytically for a delayed-feedback semiconductor laser. The second-order delay differential equation with complex coefficients is derived. The frequency of oscillations appearing at the Hopf bifurcation point is determined by the solution of two relatively simple transcendental equations, from which the bifurcation point itself is found. These equations contain dependences on all the control parameters of the problem. The exact upper and lower limits of the oscillation frequency are found. A comparison with numerical results shows that the modulation frequency is preserved almost constant in a broad range of feedback phases. A procedure is proposed for determining the parameters of the laser providing the presence of bifurcations with a passage to oscillations with the specified frequency. The results obtained in the paper are of interest for WDM communication systems. (control of laser radiation parameters)

  12. An HEMT-Based Cryogenic Charge Amplifier for Sub-kelvin Semiconductor Radiation Detectors

    NASA Astrophysics Data System (ADS)

    Phipps, A.; Sadoulet, B.; Juillard, A.; Jin, Y.

    2016-07-01

    We present the design and noise performance of a fully cryogenic (T=4 K) high-electron mobility transistor (HEMT)-based charge amplifier for readout of sub-kelvin semiconductor radiation detectors. The amplifier is being developed for use in direct detection dark matter searches such as the cryogenic dark matter search and will allow these experiments to probe weakly interacting massive particle masses below 10 GeV/c^2 while retaining background discrimination. The amplifier dissipates ≈ 1 mW of power and provides an open loop voltage gain of several hundreds. The measured noise performance is better than that of JFET-based charge amplifiers and is dominated by the noise of the input HEMT. An optimal filter calculation using the measured closed loop noise and typical detector characteristics predicts a charge resolution of σ _q=106 eV (35 electrons) for leakage currents below 4 × 10^{-15} A.

  13. High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures

    SciTech Connect

    Puzanov, A. S.; Obolenskiy, S. V. Kozlov, V. A.; Volkova, E. V.; Paveliev, D. G.

    2015-12-15

    The processes of the formation and stabilization of a radiation-induced defect cluster upon the arrival of a fast neutron to the space-charge region of a semiconductor diode are analyzed. The current pulse formed by secondary electrons is calculated and the spectrum of the signal generated by the diode (detector) under the action of an instantaneous neutron flux of the fission spectrum is determined. The possibility of experimental detection of the picosecond radiation-induced transition processes is discussed.

  14. Multi-gas interaction modeling on decorated semiconductor interfaces: A novel Fermi distribution-based response isotherm and the inverse hard/soft acid/base concept

    NASA Astrophysics Data System (ADS)

    Laminack, William; Gole, James

    2015-12-01

    A unique MEMS/NEMS approach is presented for the modeling of a detection platform for mixed gas interactions. Mixed gas analytes interact with nanostructured decorating metal oxide island sites supported on a microporous silicon substrate. The Inverse Hard/Soft acid/base (IHSAB) concept is used to assess a diversity of conductometric responses for mixed gas interactions as a function of these nanostructured metal oxides. The analyte conductometric responses are well represented using a combination diffusion/absorption-based model for multi-gas interactions where a newly developed response absorption isotherm, based on the Fermi distribution function is applied. A further coupling of this model with the IHSAB concept describes the considerations in modeling of multi-gas mixed analyte-interface, and analyte-analyte interactions. Taking into account the molecular electronic interaction of both the analytes with each other and an extrinsic semiconductor interface we demonstrate how the presence of one gas can enhance or diminish the reversible interaction of a second gas with the extrinsic semiconductor interface. These concepts demonstrate important considerations in the array-based formats for multi-gas sensing and its applications.

  15. A thin-foil Faraday collector as a radiation-hard, high fluence charged particle spectrometer

    SciTech Connect

    Cecil, F.E.; Barbour, J.C.; Belle, P. van

    1997-08-01

    The authors have developed a radiation-hard, charged particle spectrometer, consisting of thin parallel conducting foils as current collectors. Prototype detectors have been tested in accelerator bombardments and at the fusion plasma facilities TFTR and JET. In the case of the accelerator bombardments, a detector consisting of 6 Al foils, each of thickness about 6 {micro}m, demonstrated an energy resolution of about 7% for 7 MeV alpha particles. The prototype tested immediately outside TFTR demonstrated the expected insensitivity to moderately high levels of fast neutrons and hard gamma rays. The prototype tested inside JET similarly indicated operational capability at elevated temperatures as a lost alpha particle detector for d-t tokamak fusion plasmas. The robustness and moderately good energy resolution of these detectors should permit the application to tasks such as the first wall measurement of lost alpha particles from tokamak fusion plasmas, the real time measurement of light ion fission fragments from fission reactor experiments and the in-beam measurement of accelerator beam energies as a control diagnostic.

  16. Development of radiation hard CMOS active pixel sensors for HL-LHC

    NASA Astrophysics Data System (ADS)

    Pernegger, Heinz

    2016-07-01

    New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

  17. Optimization of radiation hardness and charge collection of edgeless silicon pixel sensors for photon science

    NASA Astrophysics Data System (ADS)

    Zhang, J.; Tartarotti Maimone, D.; Pennicard, D.; Sarajlic, M.; Graafsma, H.

    2014-12-01

    Recent progress in active-edge technology of silicon sensors enables the development of large-area tiled silicon pixel detectors with small dead space between modules by utilizing edgeless sensors. Such technology has been proven in successful productions of ATLAS and Medipix-based silicon pixel sensors by a few foundries. However, the drawbacks of edgeless sensors are poor radiation hardness for ionizing radiation and non-uniform charge collection by edge pixels. In this work, the radiation hardness of edgeless sensors with different polarities has been investigated using Synopsys TCAD with X-ray radiation-damage parameters implemented. Results show that if no conventional guard ring is present, none of the current designs are able to achieve a high breakdown voltage (typically < 30 V) after irradiation to a dose of ~ 10 MGy. In addition, a charge-collection model has been developed and was used to calculate the charges collected by the edge pixels of edgeless sensors when illuminated with X-rays. The model takes into account the electric field distribution inside the pixel sensor, the absorption of X-rays, drift and diffusion of electrons and holes, charge sharing effects, and threshold settings in ASICs. It is found that the non-uniform charge collection of edge pixels is caused by the strong bending of the electric field and the non-uniformity depends on bias voltage, sensor thickness and distance from active edge to the last pixel (``edge space"). In particular, the last few pixels close to the active edge of the sensor are not sensitive to low-energy X-rays ( < 10 keV), especially for sensors with thicker Si and smaller edge space. The results from the model calculation have been compared to measurements and good agreement was obtained. The model can be used to optimize the edge design. From the edge optimization, it is found that in order to guarantee the sensitivity of the last few pixels to low-energy X-rays, the edge space should be kept at least 50% of

  18. From Exploratory Synthesis to Hard Radiation Detection: Crystal Growth and Characterization of Chalcogenide and Chalcohalide Materials

    NASA Astrophysics Data System (ADS)

    Nguyen, Sandy Linhsa

    In the first half of this thesis work, exploratory synthesis of materials using mixed polychalcogenide fluxes yielded four quaternary mixed Te/S compounds, with the respective chalcogen atoms residing in different crystallographic sites. Two-dimensional thiotellurite compounds (Ag2TeS3) 2·A2S6 (A = Rb, Cs), containing the trigonal pyramidal [TeS 3]2- unit, were synthesized and characterized. These structures are composed of layers of neutral [Ag2TeS3] alternating with charge-balanced salt layers containing the polysulfide chain [S6]2- and alkali metal ions. Using mixed Te/S polychalcogenide fluxes for compound discovery, we then investigated a new set of layered metal dichalcogenides, Ag2Te(MS2)3 (M = V, Nb) crystallizing in the P-62m space group. Ag2Te(MS2)3 contains layers of [Ag2Te] sandwiched between layers of [MS2] (M = V, Nb). The Ag and, more interestingly, Te atoms are linearly coordinated by S atoms in the [MS2] layers. This linear coordination of the Te atom by S atoms is unprecedented in the literature and stabilized by charge transfer within the [Ag2Te] layers. In the latter half, we report the bulk crystal growth and characterization of Tl-based chalcogenide and chalcohalide materials for hard radiation (X- and gamma-ray) detection, which requires high density, wide band gaps, and high resistivity. Lattice hybridization was applied to identify materials with optimal properties for hard radiation detection, resulting in the chalcohalide compound Tl6SI4. Tl6SI4 exhibits low effective mass of carriers, high resistivity, optimal band gap, and large hardness values. The figure of merit mutau products, (mutau) e = 2.1 x 10-3 cm2V-1 and (mutau)h = 2.3 x 10-5 cm2V -1, are comparable to state-of-the-art commercially used materials. Furthermore, high resolution detection of Ag X-rays by Tl6SI 4 was seen at 22 keV (2.6%). Dimensional reduction was used to identify Tl-based chalcogenide materials Tl2MS3 (M = Ge, Sn). Tl2MS3 show great potential for use as hard

  19. PASSIVATION OF SEMICONDUCTOR SURFACES FOR IMPROVED RADIATION DETECTORS: X-RAY PHOTOEMISSION ANALYSIS

    SciTech Connect

    Nelson, A; Conway, A; Reinhardt, C; Ferreira, J; Nikolic, R; Payne, S

    2007-12-10

    Surface passivation of device-grade radiation detector materials was investigated using x-ray photoelectron spectroscopy in combination with transport property measurements before and after various chemical treatments. Specifically Br-MeOH (2% Br), KOH with NH{sub 4}F/H{sub 2}O{sub 2} and NH{sub 4}OH solutions were used to etch, reduce and oxidize the surface of Cd{sub (1-x)}Zn{sub x}Te semiconductor crystals. Scanning electron microscopy was used to evaluate the resultant microscopic surface morphology. Angle-resolved high-resolution photoemission measurements on the valence band electronic structure and core lines were used to evaluate the surface chemistry of the chemically treated surfaces. Metal overlayers were then deposited on these chemically treated surfaces and the I-V characteristics measured. The measurements were correlated to understand the effect of interface chemistry on the electronic structure at these interfaces with the goal of optimizing the Schottky barrier height for improved radiation detector devices.

  20. A metal-oxide-semiconductor radiation dosimeter with a thick and defect-rich oxide layer

    NASA Astrophysics Data System (ADS)

    Liu, Hongrui; Yang, Yuhao; Zhang, Jinwen

    2016-04-01

    Enhancing the density of defects in the oxide layer is the main factor in improving the sensitivity of a metal-oxide-semiconductor (MOS) radiation dosimeter. This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. The category of defects in SiO2 and their possible effect on the radiation dose sensing was analyzed. Then, we proposed combining deep-reactive-ion etching, thermal oxidation and low pressure chemical vapor deposition to realize an oxide layer containing multiple and large interfaces which can increase defects significantly. The trench-and-beam structure of silicon was considered in detail. The fabrication process was developed for obtaining a thick and compact MEMS-made SiO2. Our devices were irradiated by γ-rays of 60Co at 2 Gy per minute for 2 h and a thermally stimulated current (TSC) method was used to determine the readout of the dosimeters. Results show that there is a peak current of about 450 nA, indicating a total TSC charge of 158 μC and sensitivity of 1.1 μC mm-3·Gy, which is 40 times the sensitivity of previous MOS dosimeters.

  1. Status of radiation damage measurements in room temperature semiconductor radiation detectors

    SciTech Connect

    Franks, L.A.; James, R.B.

    1998-04-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed for the purpose of determining their applicability to space applications. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was found under these irradiation conditions.

  2. High Speed, Radiation Hard CMOS Pixel Sensors for Transmission Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Contarato, Devis; Denes, Peter; Doering, Dionisio; Joseph, John; Krieger, Brad

    CMOS monolithic active pixel sensors are currently being established as the technology of choice for new generation digital imaging systems in Transmission Electron Microscopy (TEM). A careful sensor design that couples μm-level pixel pitches with high frame rate readout and radiation hardness to very high electron doses enables the fabrication of direct electron detectors that are quickly revolutionizing high-resolution TEM imaging in material science and molecular biology. This paper will review the principal characteristics of this novel technology and its advantages over conventional, optically-coupled cameras, and retrace the sensor development driven by the Transmission Electron Aberration corrected Microscope (TEAM) project at the LBNL National Center for Electron Microscopy (NCEM), illustrating in particular the imaging capabilities enabled by single electron detection at high frame rate. Further, the presentation will report on the translation of the TEAM technology to a finer feature size process, resulting in a sensor with higher spatial resolution and superior radiation tolerance currently serving as the baseline for a commercial camera system.

  3. Photodiode radiation hardness, lyman-alpha emitting galaxies and photon detection in liquid argon neutrino detectors

    NASA Astrophysics Data System (ADS)

    Baptista, Brian

    My dissertation is comprised of three projects: 1) studies of Lyman-alpha Emitting galaxies (LAEs), 2) radiation hardness studies of InGaAs photodiodes (PDs), and 3) scintillation photon detection in liquid argon (LAr) neutrino detectors. I began work on the project that has now become WFIRST, developing a science case that would use WFIRST after launch for the observation of LAEs. The radiation hardness of PDs was as an effort to support the WFIRST calibration team. When WFIRST was significantly delayed, I joined an R&D effort that applied my skills to work on photon detection in LAr neutrino detectors. I report results on a broadband selection method developed to detect high equivalent width (EW) LAEs. Using photometry from the CFHT-Legacy Survey Deep 2 and 3 fields, I have spectroscopically confirmed 63 z=2.5-3.5 LAEs using the WIYN/Hydra spectrograph. Using UV continuum-fitting techniques I computed properties such as EWs, internal reddening and star formation rates. 62 of my LAEs show evidence to be normal dust-free LAEs. Second, I present an investigation into the effects of ionizing proton radiation on commercial off-the-shelf InGaAs PDs. I developed a monochromator-based test apparatus that utilized NIST-calibrated reference PDs. I tested the PDs for changes to their dark current, relative responsivity as a function of wavelength, and absolute responsivity. I irradiated the test PDs using 30, 52, and 98 MeV protons at the IU Cyclotron Facility. I found the InGaAs PDs showed increased dark current as the fluence increased with no evidence of broadband response degradation at the fluences expected at an L2 orbit and a 10-year mission lifetime. Finally, I detail my efforts on technology development of both optical detector technologies and waveshifting light guide construction for LAr vacuum UV scintillation light. Cryogenic neutrino detectors use photon detection for both accelerator based science and for SNe neutrino detection and proton decay. I have

  4. Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

    SciTech Connect

    Sun, K.

    2011-05-04

    This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

  5. Influence of gamma radiation and magnetic resonance imaging radiation on micro-structure, hardness and electrochemical corrosion behavior of Co‒Cr-based dental alloy

    NASA Astrophysics Data System (ADS)

    Bakr El-Bediwi, Abu; Saada, Mohamed; El-Fallal, Abeer A.; El-Khaligy, Samar

    2011-03-01

    The effects of therapeutic gamma radiation at 10, 20 and 30 kGy and magnetic resonance imaging radiation from a 1.5 T MR scanner on the micro-structure, electrochemical corrosion behavior and micro-hardness of commercial dental Magnum H50 (Co=64%, Cr=29%, Mo=6.5%) alloy have been investigated. The corrosion rate, corrosion resistance, corrosion potential and corrosion current density values of the alloy treated with 0.5 M HCl vary due to gamma and magnetic resonance imaging radiation. At 30 kGy, the corrosion resistance of Magnum H50 reaches a minimum value and the corrosion rate obtains a maximum value. The Vickers hardness value of the Magnum H50 alloy decreases after both gamma and magnetic resonance imaging radiation.

  6. Radiation-electrochemical oxidation of water on semiconductor (TiO 2, SrTiO 3) electrodes in aqueous electrolyte solutions

    NASA Astrophysics Data System (ADS)

    Pleskov, Yu. V.; Krotova, M. D.; Revina, A. A.

    Irradiation of an electrochemical cell with a semiconductor (TiO 2, SrTiO 3) anode, a metal cathode, and an aqueous electrolyte solution with ionizing radiation (accelerated electrons with the energy 4 MeV, X-radiation 70 keV, γ radiation, and neutron radiation of a nuclear reactor) stimulates the process of electrochemical decomposition of water resulting in O 2 evolution at a semiconductor anode. The radiation-electrochemical process is caused by generation in the semiconductor of minority carriers (holes) necessary for anodic oxidation of water. The possibility of converting by radiation-electrochemical means the energy of ionizing radiation into chemical energy has been thus demonstrated.

  7. AlGaN UV LED and Photodiodes Radiation Hardness and Space Qualifications and Their Applications in Space Science and High Energy Density Physics

    SciTech Connect

    Sun, K. X.

    2011-05-31

    This presentation provides an overview of robust, radiation hard AlGaN optoelectronic devices and their applications in space exploration & high energy density physics. Particularly, deep UV LED and deep UV photodiodes are discussed with regard to their applications, radiation hardness and space qualification. AC charge management of UV LED satellite payload instruments, which were to be launched in late 2012, is covered.

  8. Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

    NASA Astrophysics Data System (ADS)

    Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

    2014-06-01

    The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

  9. Radiation Hard Bandpass Filters for Mid- to Far-IR Planetary Instruments

    NASA Technical Reports Server (NTRS)

    Brown, Ari D.; Aslam, Shahid; Chervenack, James A.; Huang, Wei-Chung; Merrell, Willie C.; Quijada, Manuel; Steptoe-Jackson, Rosalind; Wollack, Edward J.

    2012-01-01

    We present a novel method to fabricate compact metal mesh bandpass filters for use in mid- to far-infrared planetary instruments operating in the 20-600 micron wavelength spectral regime. Our target applications include thermal mapping instruments on ESA's JUICE as well as on a de-scoped JEO. These filters are novel because they are compact, customizable, free-standing copper mesh resonant bandpass filters with micromachined silicon support frames. The filters are well suited for thermal mapping mission to the outer planets and their moons because the filter material is radiation hard. Furthermore, the silicon support frame allows for effective hybridization with sensors made on silicon substrates. Using a Fourier Transform Spectrometer, we have demonstrated high transmittance within the passband as well as good out-of-band rejection [1]. In addition, we have developed a unique method of filter stacking in order to increase the bandwidth and sharpen the roll-off of the filters. This method allows one to reliably control the spacing between filters to within 2 microns. Furthermore, our method allows for reliable control over the relative position and orienta-tion between the shared faces of the filters.

  10. Pixel frontend electronics in a radiation hard technology for hybrid and monolithic applications

    SciTech Connect

    Pengg, F. |; Campbell, M.; Heijne, E.H.M.; Snoeys, W.

    1996-06-01

    Pixel detector readout cells have been designed in the radiation hard DMILL technology and their characteristics evaluated before and after irradiation to 14Mrad. The test chip consists of two blocks of six readout cells each. Two different charge amplifiers are implemented, one of them using a capacitive feedback loop, the other the fast signal charge transfer to a high impedance integrating node. The measured equivalent noise charge is 110e{sup {minus}}r.m.s. before and 150e{sup {minus}}r.m.s. after irradiation. With a discriminator threshold set to 5000e{sup {minus}}, which reduces for the same bias setting to 400e{sup {minus}} after irradiation, the threshold variation is 300e{sup {minus}}r.m.s. and 250e{sup {minus}}r.m.s. respectively. The time walk is 40ns before and after irradiation. The use of this SOI technology for monolithic integration of electronics and detector in one substrate is under investigation.

  11. Design and Fabrication of a Radiation-Hard 500-MHz Digitizer Using Deep Submicron Technology

    SciTech Connect

    K.K. Gan; M.O. Johnson; R.D. Kass; J. Moore

    2008-09-12

    The proposed International Linear Collider (ILC) will use tens of thousands of beam position monitors (BPMs) for precise beam alignment. The signal from each BPM is digitized and processed for feedback control. We proposed the development of an 11-bit (effective) digitizer with 500 MHz bandwidth and 2 G samples/s. The digitizer was somewhat beyond the state-of-the-art. Moreover we planned to design the digitizer chip using the deep-submicron technology with custom transistors that had proven to be very radiation hard (up to at least 60 Mrad). The design mitigated the need for costly shielding and long cables while providing ready access to the electronics for testing and maintenance. In FY06 as we prepared to submit a chip with test circuits and a partial ADC circuit we found that IBM had changed the availability of our chosen IC fabrication process (IBM 6HP SiGe BiCMOS), making it unaffordable for us, at roughly 3 times the previous price. This prompted us to change our design to the IBM 5HPE process with 0.35 µm feature size. We requested funding for FY07 to continue the design work and submit the first prototype chip. Unfortunately, the funding was not continued and we will summarize below the work accomplished so far.

  12. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Buchholz, P.; Kagan, H. P.; Kass, R. D.; Moore, J. R.; Smith, D. S.; Wiese, A.; Ziolkowskic, M.

    2010-12-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for the VCSEL and a receiver/decoder to decode the signal received at the PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder can properly decode the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ~ 5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value. The ASICs were irradiated to a dose of 46 Mrad with 24 GeV/c protons. The observed modest degradation is acceptable and the single event upset rate is negligible.

  13. Radiation-hard ASICs for optical data transmission in the first phase of the LHC upgrade

    NASA Astrophysics Data System (ADS)

    Gan, K. K.; Buchholz, P.; Kagan, H. P.; Kass, R. D.; Moore, J. R.; Smith, D. S.; Wiese, A.; Ziolkowskic, M.

    2011-06-01

    We have designed two ASICs for possible applications in the optical links of a new layer of the pixel detector to be install inside the ATLAS Pixel detector for the first phase of the LHC luminosity upgrade. The ASICs include a high-speed driver for a VCSEL and a receiver/decoder to decode the signal received at a PIN diode to extract the data and clock. Both ASICs contain 4 channels for operation with a VCSEL or PIN array. The ASICs were designed using a 130 nm CMOS process to enhance the radiation-hardness. We have characterized the fabricated ASICs and the performance of the ASICs is satisfactory. The receiver/decoder properly decodes the bi-phase marked input stream with low PIN current and the driver can operate a VCSEL up to ˜5 Gb/s. The added functionalities are also successful, including redundancy to bypass a broken VCSEL or PIN channel, individual control of VCSEL current, and power-on reset circuit to set all VCSEL currents to a nominal value.

  14. Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

    NASA Technical Reports Server (NTRS)

    Shaw, D. C.; Swift, G. M.; Johnston, A. H.

    1995-01-01

    In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

  15. Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Bertness, K. A.; Kibbler, A. E.; Kramer, C.; Olson, J. M.

    1994-01-01

    In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

  16. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  17. Dense plasma focus PACO as a hard X-ray emitter: a study on the radiation source

    NASA Astrophysics Data System (ADS)

    Supán, L.; Guichón, S.; Milanese, M.; Niedbalski, J.; Moroso, R.; Acuña, H.; Malamud, F.

    2014-05-01

    The radiation in the X-ray range detected outside the vacuum chamber of the dense plasma focus (DPF) PACO, are produced on the anode zone. The zone of emission is studied in a shot-to-shot analysis, using pure deuterium as filling gas. We present a diagnostic method to determine the place and size of the hard X-ray source by image analysis of high density radiography plates.

  18. Radiation hardness of Ga0.5In0.5 P/GaAs tandem solar cells

    NASA Technical Reports Server (NTRS)

    Kurtz, Sarah R.; Olson, J. M.; Bertness, K. A.; Friedman, D. J.; Kibbler, A.; Cavicchi, B. T.; Krut, D. D.

    1991-01-01

    The radiation hardness of a two-junction monolithic Ga sub 0.5 In sub 0.5 P/GaAs cell with tunnel junction interconnect was investigated. Related single junction cells were also studied to identify the origins of the radiation losses. The optimal design of the cell is discussed. The air mass efficiency of an optimized tandem cell after irradiation with 10(exp 15) cm (-2) 1 MeV electrons is estimated to be 20 percent using currently available technology.

  19. Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof

    DOEpatents

    Nikolic, Rebecca J.; Conway, Adam M.; Nelson, Art J.; Payne, Stephen A.

    2012-09-04

    In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system comprises a semiconductor gamma detector material, and an electron blocking layer adjacent the gamma detector material, the electron blocking layer resisting passage of electrons therethrough, wherein the electron blocking layer comprises undoped HgCdTe. In another embodiment, a method comprises forming a hole blocking layer adjacent a semiconductor gamma detector material, the hole blocking layer resisting passage of holes therethrough. Additional systems and methods are also presented.

  20. Generation of terahertz radiation by a surface ballistic photocurrent in semiconductors under subpicosecond laser excitation

    SciTech Connect

    Ziaziulia, P. A.; Malevich, V. L.; Manak, I. S.; Krotkus, A.

    2012-02-15

    An analytical model describing the onset of a surface ballistic photocurrent in cubic semiconductors under femtosecond laser excitation is proposed. It is shown that the contribution of the photocurrent component parallel to the surface to the generation of terahertz pulses may be comparable to the contribution of the perpendicular component. Consideration of the cubic symmetry of a semiconductor leads to the azimuthal anisotropy of terahertz generation.

  1. EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Effect of compression of a laser plasma on the generation of harmonics and hard x radiation

    NASA Astrophysics Data System (ADS)

    Apollonov, V. V.; Derzhavin, S. I.; Kazakov, K. Kh

    1993-02-01

    A compression of a plasma produced at a conical target by a low-intensity beam (q≲10 GW/cm2) from a CO2 laser has been studied. The effect of this compression on the onset of the parametric instability responsible for the generation of harmonics and of hard x radiation has also been studied. A qualitative interpretation of the results is offered.

  2. A built-in SRAM for radiation hard CMOS pixel sensors dedicated to high energy physics experiments

    NASA Astrophysics Data System (ADS)

    Wei, Xiaomin; Gao, Deyuan; Doziere, Guy; Hu, Yann

    2013-02-01

    CMOS pixel sensors (CPS) are attractive candidates for charged particle tracking in high energy physics experiments. However, CPS chips fabricated with standard CMOS processes, especially the built-in SRAM IP cores, are not radiation hard enough for this application. This paper presents a radiation hard SRAM for improving the CPS radiation tolerance. The SRAM cell is hardened by increasing the static noise margin (SNM) and adding P+ guard rings in layout. The peripheral circuitry is designed by building a radiation-hardened logic library. The SRAM internal timing control is hardened by a self-adaptive timing design. Finally, the SRAM design was implemented and tested in the Austriamicrosystems (AMS) 0.35 μm standard CMOS process. The prototype chips are adapted to work with frequencies up to 80 MHz, power supply voltages from 2.9 V to 3.3 V and temperatures from 0 °C to 60 °C. The single event latchup (SEL) tolerance is improved from 5.2 MeV cm2/mg to above 56 MeV cm2/mg. The total ionizing dose (TID) tolerance is enhanced by the P+ guard rings and the self-adaptive timing design. The single event upset (SEU) effects are also alleviated due to the high SNM SRAM cell and the P+ guard rings. In the near future, the presented SRAM will be integrated in the CPS chips for the STAR experiments.

  3. RADECS Short Course Section 4 Radiation Hardness Assurance (RHA) for Space Systems

    NASA Technical Reports Server (NTRS)

    Poivey, Christian

    2003-01-01

    Contents include the following: Introduction. Programmatic aspects of RHA. RHA componens: requirements and specifications; mission radiation environment; and parts selection and radiation tolerance. Analysis at the function/subsystem/system level: TID/DD; SEE. Conclusion.

  4. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    SciTech Connect

    Makita, M.; Karvinen, P.; Zhu, D.; Juranic, P. N.; Grünert, J.; Cartier, S.; Jungmann-Smith, J. H.; Lemke, H. T.; Mozzanica, A.; Nelson, S.; Patthey, L.; Sikorski, M.; Song, S.; Feng, Y.; David, C.

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy of >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.

  5. Effects of quenching, irradiation, and annealing processes on the radiation hardness of silica fiber cladding materials (I)

    NASA Astrophysics Data System (ADS)

    Wen, Jianxiang; Gong, Renxiang; Xiao, Zhongyin; Luo, Wenyun; Wu, Wenkai; Luo, Yanhua; Peng, Gang-ding; Pang, Fufei; Chen, Zhenyi; Wang, Tingyun

    2016-07-01

    Silica optical fiber cladding materials were experimentally treated by a series of processes. The treatments involved quenching, irradiation, followed by annealing and subsequent re-irradiation, and they were conducted in order to improve the radiation hardness. The microstructural properties of the treated materials were subsequently investigated. Following the treatment of the optical fiber cladding materials, the results from the electron spin resonance (ESR) analysis demonstrated that there was a significant decrease in the radiation-induced defect structures. The ESR signals became significantly weaker when the samples were annealed at 1000 °C in combination with re-irradiation. In addition, the microstructure changes within the silica optical fiber cladding material were also analyzed using Raman spectroscopy. The experimental results demonstrate that the Sisbnd Osbnd Si bending vibrations at ω3 = 800-820 cm-1 and ω4 = 1000-1200 cm-1 (with longitudinal optical (LO) and transverse optical (TO) splitting bands) were relatively unaffected by the quenching, irradiation, and annealing treatments. In particular, the annealing process resulted in the disappearance of the defect centers; however, the LO and TO modes at the ω3 and ω4 bands were relatively unchanged. With the additional support of the ESR test results, we can conclude that the combined treatment processes can significantly enhance the radiation hardness properties of the optical fiber cladding materials.

  6. Quantitative analysis of flare accelerated electrons through their hard X-ray and microwave radiation

    NASA Technical Reports Server (NTRS)

    Klein, K. L.; Trottet, G.

    1985-01-01

    Hard X-ray and microwave modelling that takes into account the temporal evolution of the electron spectrum as well as the inhomogeneity of the magnetic field and the ambient medium in the radio source is presented. This method is illustrated for the June 29 1980 10:41 UT event. The implication on the process of acceleration/injection is discussed.

  7. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    NASA Astrophysics Data System (ADS)

    Jungmann-Smith, J. H.; Bergamaschi, A.; Brückner, M.; Cartier, S.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Medjoubi, K.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 104 photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm2 pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm2. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  8. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science.

    PubMed

    Jungmann-Smith, J H; Bergamaschi, A; Brückner, M; Cartier, S; Dinapoli, R; Greiffenberg, D; Jaggi, A; Maliakal, D; Mayilyan, D; Medjoubi, K; Mezza, D; Mozzanica, A; Ramilli, M; Ruder, Ch; Schädler, L; Schmitt, B; Shi, X; Tinti, G

    2015-12-01

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10(4) photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm(2) pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm(2). Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  9. Radiation hardness assessment of the charge-integrating hybrid pixel detector JUNGFRAU 1.0 for photon science

    SciTech Connect

    Jungmann-Smith, J. H. Bergamaschi, A.; Brückner, M.; Dinapoli, R.; Greiffenberg, D.; Jaggi, A.; Maliakal, D.; Mayilyan, D.; Mezza, D.; Mozzanica, A.; Ramilli, M.; Ruder, Ch.; Schädler, L.; Schmitt, B.; Shi, X.; Tinti, G.; Cartier, S.; Medjoubi, K.

    2015-12-15

    JUNGFRAU (adJUstiNg Gain detector FoR the Aramis User station) is a two-dimensional hybrid pixel detector for photon science applications in free electron lasers, particularly SwissFEL, and synchrotron light sources. JUNGFRAU is an automatic gain switching, charge-integrating detector which covers a dynamic range of more than 10{sup 4} photons of an energy of 12 keV with a good linearity, uniformity of response, and spatial resolving power. The JUNGFRAU 1.0 application-specific integrated circuit (ASIC) features a 256 × 256 pixel matrix of 75 × 75 μm{sup 2} pixels and is bump-bonded to a 320 μm thick Si sensor. Modules of 2 × 4 chips cover an area of about 4 × 8 cm{sup 2}. Readout rates in excess of 2 kHz enable linear count rate capabilities of 20 MHz (at 12 keV) and 50 MHz (at 5 keV). The tolerance of JUNGFRAU to radiation is a key issue to guarantee several years of operation at free electron lasers and synchrotrons. The radiation hardness of JUNGFRAU 1.0 is tested with synchrotron radiation up to 10 MGy of delivered dose. The effect of radiation-induced changes on the noise, baseline, gain, and gain switching is evaluated post-irradiation for both the ASIC and the hybridized assembly. The bare JUNGFRAU 1.0 chip can withstand doses as high as 10 MGy with minor changes to its noise and a reduction in the preamplifier gain. The hybridized assembly, in particular the sensor, is affected by the photon irradiation which mainly shows as an increase in the leakage current. Self-healing of the system is investigated during a period of 11 weeks after the delivery of the radiation dose. Annealing radiation-induced changes by bake-out at 100 °C is investigated. It is concluded that the JUNGFRAU 1.0 pixel is sufficiently radiation-hard for its envisioned applications at SwissFEL and synchrotron beam lines.

  10. Radiation Hardness Assurance Issues Associated with COTS in JPL Flight Systems: The Challenge of Europa

    NASA Technical Reports Server (NTRS)

    Barnes, C.; Johnston, A.

    1999-01-01

    With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.

  11. Radiation-hard analog-to-digital converters for space and strategic applications

    NASA Technical Reports Server (NTRS)

    Gauthier, M. K.; Dantas, A. R. V.

    1985-01-01

    During the course of the Jet Propulsion Laboratory's program to study radiation-hardened analog-to-digital converters (ADCs), numerous milestones have been reached in manufacturers' awareness and technology development and transfer, as well as in user awareness of these developments. The testing of ADCs has also continued with twenty different ADCs from seven manufacturers, all tested for total radiation dose and three tested for neutron effects. Results from these tests are reported.

  12. A Radiation-Hard Silicon Drift Detector Array for Extraterrestrial Element Mapping

    NASA Technical Reports Server (NTRS)

    Gaskin, Jessica; Chen, Wei; De Geronimo, Gianluigi; Keister, Jeff; Li, Shaouri; Li, Zhen; Siddons, David P.; Smith, Graham

    2011-01-01

    Measurement of x-rays from the surface of objects can tell us about the chemical composition Absorption of radiation causes characteristic fluorescence from material being irradiated. By measuring the spectrum of the radiation and identifying lines in the spectrum, the emitting element (s) can be identified. This technique works for any object that has no absorbing atmosphere and significant surface irradiation : Our Moon, the icy moons of Jupiter, the moons of Mars, the planet Mercury, Asteroids and Comets

  13. Total-dose radiation effects data for semiconductor devices, volume 2

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1981-01-01

    Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

  14. Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation

    NASA Astrophysics Data System (ADS)

    Hwang, J. S.; Lin, H. C.; Chang, C. K.; Wang, T. S.; Lin, K. I.; Chang, L. S.; Lu, Y. T.

    2007-02-01

    The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n + (SIN +) structures with various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field" related with the energy difference between the Γ to L valley of the semiconductor, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers. Our study proposed two optimal conditions for an SIN + structure to serve as a THz emitter: the width of its intrinsic layer is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides one way to estimate the Γ to L valley splitting in semiconductors.

  15. Evaluation of a dual bias dual metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter.

    PubMed

    Soubra, M; Cygler, J; Mackay, G

    1994-04-01

    A new type of direct reading semiconductor dosimeter has been investigated as a radiation detector for photon and electron therapy beams of various energies. The operation of this device is based on the measurement of the threshold voltage shift in a custom-built metal oxide-silicon semiconductor field effect transistor (MOSFET). This voltage is a linear function of absorbed dose. The extent of the linearity region is dependent on the voltage controlled operation during irradiation. Operating two MOSFETS at two different biases simultaneously during irradiation will result in sensitivity (V/Gy) reproducibility better than +/- 3% over a range in dose of 100 Gy and at a dose per fraction greater than 20 x 10(-2) Gy. The modes of operation give this device many advantages, such as continuous monitoring during irradiation, immediate reading, and permanent storage of total dose after irradiation. The availability and ease of use of these MOSFET detectors make them very promising in clinical dosimetry. PMID:8058024

  16. Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector

    NASA Astrophysics Data System (ADS)

    Hou, S.; Ishii, K.; Itoh, M.; Sakemi, Y.; Su, D. S.; Su, T. T.; Teng, P. K.; Yoshida, H. P.

    2011-04-01

    Optical links are used for data transmission of the ATLAS inner detector in a radiation hazard environment at the Large Hadron Collider (LHC). The radiation tolerance is studied for the opto-electronics of GaAs VCSEL and epitaxial Si PIN with 30 and 70 MeV protons at CYRIC. High speed Si and GaAs PIN photo-diodes are also investigated for upgrade to super-LHC. The annealing of GaAs VCSEL by charge injection is characterized. The GaAs devices show approximately linear degradations to fluence. The dependence on proton energy is compared to the Non-Ionizing Energy Loss calculations.

  17. Irradiate-anneal screening of total dose effects in semiconductor devices. [radiation hardening of spacecraft components of Mariner spacecraft

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Price, W. E.

    1976-01-01

    An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

  18. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor

    PubMed Central

    Al-Ta’ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current–voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung’s method and Norde’s technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I–V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. PMID:26799703

  19. Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.

    PubMed

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2016-01-01

    Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.

  20. Improvement of the radiation hardness of a directly converting high resolution intra-oral X-ray imaging sensor

    NASA Astrophysics Data System (ADS)

    Spartiotis, Konstantinos; Pyyhtiä, Jouni; Schulman, Tom

    2003-11-01

    The radiation tolerance of a directly converting digital intra-oral X-ray imaging sensor reported in Spartiotis et al. [Nucl. Instr. and Meth. A 501 (2003) 594] has been tested using a typical dental X-ray beam spectrum. Radiation induced degradation in the performance of the sensor which consists of CMOS signal readout circuits bump bonded to a high resistivity silicon pixel detector was observed already before a dose (in air) of 1 krad. Both increase in the leakage current of the pixel detector manufactured by Sintef, Norway and signal leakage to ground from the gate of the pixel input MOSFETs of the readout circuit were observed and measured. The sensitive part of the CMOS circuit was identified as the protection diode of the gate of the input MOSFET. After removing the gate protection diode no signal leakage was observed up to a dose of 5 krad (air) which approximately corresponds to 125.000 typical dental X-ray exposures. The radiation hardness of the silicon pixel detector was improved by using a modified oxidation process supplied by Colibrys, Switzerland. The improved pixel detectors showed no increase in the leakage current at dental doses.

  1. Semiconductors Under Ion Radiation: Ultrafast Electron-Ion Dynamics in Perfect Crystals and the Effect of Defects

    NASA Astrophysics Data System (ADS)

    Lee, Cheng-Wei; Schleife, André

    Stability and safety issues have been challenging difficulties for materials and devices under radiation such as solar panels in outer space. On the other hand, radiation can be utilized to modify materials and increase their performance via focused-ion beam patterning at nano-scale. In order to grasp the underlying processes, further understanding of the radiation-material and radiation-defect interactions is required and inevitably involves the electron-ion dynamics that was traditionally hard to capture. By applying Ehrenfest dynamics based on time-dependent density functional theory, we have been able to perform real-time simulation of electron-ion dynamics in MgO and InP/GaP. By simulating a high-energy proton penetrating the material, the energy gain of electronic system can be interpreted as electronic stopping power and the result is compared to existing data. We also study electronic stopping in the vicinity of defects: for both oxygen vacancy in MgO and interface of InP/GaP superlattice, electronic stopping shows strong dependence on the velocity of the proton. To study the energy transfer from electronic system to lattice, simulations of about 100 femto-seconds are performed and we analyze the difference between Ehrenfest and Born-Oppenheimer molecular dynamics.

  2. Quantum Vacuum Radiation Spectra from a Semiconductor Microcavity with a Time-Modulated Vacuum Rabi Frequency

    SciTech Connect

    De Liberato, Simone; Ciuti, Cristiano; Carusotto, Iacopo

    2007-03-09

    We develop a general theory of the quantum vacuum radiation generated by an arbitrary time modulation of the vacuum Rabi frequency of an intersubband transition in a doped quantum well system embedded in a planar microcavity. Both nonradiative and radiative losses are included within an input-output quantum Langevin framework. The intensity and the spectral signatures of the extra-cavity emission are characterized versus the modulation properties. For realistic parameters, the photon pair emission is predicted to largely exceed the blackbody radiation in the mid and far infrared. For strong and resonant modulation a parametric oscillation regime is achievable.

  3. High-resolution single-shot spectral monitoring of hard x-ray free-electron laser radiation

    DOE PAGES

    Makita, M.; Karvinen, P.; Zhu, D.; Juranic, P. N.; Grünert, J.; Cartier, S.; Jungmann-Smith, J. H.; Lemke, H. T.; Mozzanica, A.; Nelson, S.; et al

    2015-10-16

    We have developed an on-line spectrometer for hard x-ray free-electron laser (XFEL) radiation based on a nanostructured diamond diffraction grating and a bent crystal analyzer. Our method provides high spectral resolution, interferes negligibly with the XFEL beam, and can withstand the intense hard x-ray pulses at high repetition rates of >100 Hz. The spectrometer is capable of providing shot-to-shot spectral information for the normalization of data obtained in scientific experiments and optimization of the accelerator operation parameters. We have demonstrated these capabilities of the setup at the Linac Coherent Light Source, in self-amplified spontaneous emission mode at full energy ofmore » >1 mJ with a 120 Hz repetition rate, obtaining a resolving power of Ε/δΕ > 3 × 104. In conclusion, the device was also used to monitor the effects of pulse duration down to 8 fs by analysis of the spectral spike width.« less

  4. A confident source of hard X-rays: radiation from a tokamak applicable for runaway electrons diagnosis.

    PubMed

    Kafi, M; Salar Elahi, A; Ghoranneviss, M; Ghanbari, M R; Salem, M K

    2016-09-01

    In a tokamak with a toroidal electric field, electrons that exceed the critical velocity are freely accelerated and can reach very high energies. These so-called `runaway electrons' can cause severe damage to the vacuum vessel and are a dangerous source of hard X-rays. Here the effect of toroidal electric and magnetic field changes on the characteristics of runaway electrons is reported. A possible technique for runaways diagnosis is the detection of hard X-ray radiation; for this purpose, a scintillator (NaI) was used. Because of the high loop voltage at the beginning of a plasma, this investigation was carried out on toroidal electric field changes in the first 5 ms interval from the beginning of the plasma. In addition, the toroidal magnetic field was monitored for the whole discharge time. The results indicate that with increasing toroidal electric field the mean energy of runaway electrons rises, and also an increase in the toroidal magnetic field can result in a decrease in intensity of magnetohydrodynamic oscillations which means that for both conditions more of these high-energy electrons will be generated.

  5. A confident source of hard X-rays: radiation from a tokamak applicable for runaway electrons diagnosis.

    PubMed

    Kafi, M; Salar Elahi, A; Ghoranneviss, M; Ghanbari, M R; Salem, M K

    2016-09-01

    In a tokamak with a toroidal electric field, electrons that exceed the critical velocity are freely accelerated and can reach very high energies. These so-called `runaway electrons' can cause severe damage to the vacuum vessel and are a dangerous source of hard X-rays. Here the effect of toroidal electric and magnetic field changes on the characteristics of runaway electrons is reported. A possible technique for runaways diagnosis is the detection of hard X-ray radiation; for this purpose, a scintillator (NaI) was used. Because of the high loop voltage at the beginning of a plasma, this investigation was carried out on toroidal electric field changes in the first 5 ms interval from the beginning of the plasma. In addition, the toroidal magnetic field was monitored for the whole discharge time. The results indicate that with increasing toroidal electric field the mean energy of runaway electrons rises, and also an increase in the toroidal magnetic field can result in a decrease in intensity of magnetohydrodynamic oscillations which means that for both conditions more of these high-energy electrons will be generated. PMID:27577779

  6. Effects of gamma radiation on hard dental tissues of albino rats using scanning electron microscope - Part 1

    NASA Astrophysics Data System (ADS)

    El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; Maghraby, Ahmed; El-Zainy, Medhat

    2011-12-01

    In the present study, 40 adult male albino rats were used to study the effect of gamma radiation on the hard dental tissues (enamel surface, dentinal tubules and the cementum surface). The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy gamma doses. The effects of irradiated hard dental tissues samples were investigated using a scanning electron microscope. For doses up to 0.5 Gy, there was no evidence of the existence of cracks on the enamel surface. With 1 Gy irradiation dose, cracks were clearly observed with localized erosive areas. At 2 Gy irradiation dose, the enamel showed morphological alterations as disturbed prismatic and interprismatic areas. An increase in dentinal tubules diameter and a contemporary inter-tubular dentine volume decrease were observed with higher irradiation dose. Concerning cementum, low doses,<0.5 Gy, showed surface irregularities and with increase in the irradiation dose to≥1 Gy, noticeable surface irregularities and erosive areas with decrease in Sharpey's fiber sites were observed. These observations could shed light on the hazardous effects of irradiation fields to the functioning of the human teeth.

  7. Radiation hardness test of the Philips Digital Photon Counter with proton beam

    NASA Astrophysics Data System (ADS)

    Barnyakov, M. Yu.; Frach, T.; Kononov, S. A.; Kuyanov, I. A.; Prisekin, V. G.

    2016-07-01

    The Philips Digital Photon Counter (DPC) is a silicon photomultiplier combining Geiger-mode avalanche photodiodes (G-APD) and dedicated readout electronics in the same chip. The DPC is a promising photon sensor for future RICH detectors. A known issue of G-APD is its sensitivity to radiation damage. Two DPC sensors were tested using 800 MeV/c protons. An increase of dark counting rate with proton fluence up to 4 ·1011cm-2 has been measured.

  8. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

    NASA Astrophysics Data System (ADS)

    Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung-Han; Facchetti, Antonio; Mark, Tobin J.

    2006-08-01

    In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60nm SiO2 gate insulator. A total-radiation dose study was performed using 10MeV protons at doses of 5.71 and 285krad(Si ). The threshold voltage (Vth) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, Vth parameters of the SiO2-based ZnO NW-FETs display average shifts of ˜-4.0 and ˜-10.9V for 5.71 and 285krad(Si ) H+ irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H+ irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H+ irradiation are significantly lower than those for the corresponding SiO2 gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

  9. X-rays and hard ultraviolet radiation from the first galaxies: ionization bubbles and 21-cm observations

    NASA Astrophysics Data System (ADS)

    Venkatesan, Aparna; Benson, Andrew

    2011-11-01

    The first stars and quasars are known sources of hard ionizing radiation in the first billion years of the Universe. We examine the joint effects of X-rays and hard ultraviolet (UV) radiation from such first-light sources on the hydrogen and helium reionization of the intergalactic medium (IGM) at early times, and the associated heating. We study the growth and evolution of individual H II, He II and He III regions around early galaxies with first stars and/or quasi-stellar object populations. We find that in the presence of helium-ionizing radiation, X-rays may not dominate the ionization and thermal history of the IGM at z˜ 10-20, contributing relatively modest increases to IGM ionization and heating up to ˜103-105 K in IGM temperatures. We also calculate the 21-cm signal expected from a number of scenarios with metal-free starbursts and quasars in varying combinations and masses at these redshifts. The peak values for the spin temperature reach ˜104-105 K in such cases. The maximum values for the 21-cm brightness temperature are around 30-40 mK in emission, while the net values of the 21-cm absorption signal range from ˜a few to 60 mK on scales of 0.01-1 Mpc. We find that the 21-cm signature of X-ray versus UV ionization could be distinct, with the emission signal expected from X-rays alone occurring at smaller scales than that from UV radiation, resulting from the inherently different spatial scales at which X-ray and UV ionization/heating manifests. This difference is time-dependent and becomes harder to distinguish with an increasing X-ray contribution to the total ionizing photon production. Such differing scale-dependent contributions from X-ray and UV photons may therefore 'blur' the 21-cm signature of the percolation of ionized bubbles around early haloes (depending on whether a cosmic X-ray or UV background is built up first) and affect the interpretation of 21-cm data constraints on reionization.

  10. Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

    NASA Astrophysics Data System (ADS)

    Mu, Yifei; Zhao, Ce Zhou; Qi, Yanfei; Lam, Sang; Zhao, Chun; Lu, Qifeng; Cai, Yutao; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2016-04-01

    The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11 GBq Cs137 gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional capacitance-voltage (C-V) and stress module, a pulse C-V and stress module, a conventional current-voltage (I-V) and stress module, a pulse I-V and stress module, a DC on-the-fly (OTF) module and a pulse OTF module. Electrical characteristics of MOS capacitors or MOSFET devices are measured by each module integrated in the probe station under continuous γ-ray exposure and the measurement results are presented. The dose rates of different gate dielectrics are calculated by a novel calculation model based on the Cs137 γ-ray source placed in the probe station. For the sake of operators' safety, an equivalent dose rate of 70 nSv/h at a given operation distance is indicated by a dose attenuation model in the experimental environment. HfO2 thin films formed by atomic layer deposition are employed to investigate the radiation response of the high-κ material by using the conventional C-V and pulse C-V modules. The irradiation exposure of the sample is carried out with a dose rate of 0.175 rad/s and ±1 V bias in the radiation response testing system. Analysis of flat-band voltage shifts (ΔVFB) of the MOS capacitors suggests that the on-site and real-time/pulse measurements detect more serious degradation of the HfO2 thin films compared with the off-site irradiation and conventional measurement techniques.

  11. Semiconductor millimeter and centimeter wave radiometer for the study of the radiation of an underlying surface

    NASA Technical Reports Server (NTRS)

    Bordonskiy, G. S.; Zazinov, A. N.; Kirsanov, Y. A.; Kravchenko, M. K.; Khapin, Y. B.; Sharapov, A. N.; Etkin, V. S.

    1979-01-01

    A theoretical and experimental investigation of a superheterodyne radiometer system with input frequency converter and intermediate frequency modulation is presented. Conditions are found, at which the temperature sensitivity of the device does not deteriorate. A sensitivity function to external parameters (temperature, heterodyne power) of a radiometer system with intermediate frequency modulation and a Schottky diode frequency converter is presented and calculated. Use of a frequency converter at the second harmonic of the heterodyne permitted simplication of the radiometer design and the use of a semiconductor heterodyne. A 3 cm range intermediate frequency amplifier permitted the use of centimeter wave radiometer signals. Fluctuation sensitivity of radiometers with a 1 sec time constant is 0.3 K at 3.4 mm and 0.06 K at 3 cm.

  12. Performance of Multilayer Monochromators for Hard X-Ray Imaging with Coherent Synchrotron Radiation

    SciTech Connect

    Dietsch, R.; Holz, T.; Kraemer, M.; Weissbach, D.; Rack, A.; Weitkamp, T.; Morawe, Ch.; Cloetens, P.; Ziegler, E.; Riotte, M.; Rack, T.; Siewert, F.

    2011-09-09

    We present a study in which multilayers of different periodicity (from 2.5 to 5.5 nm), composition (W/Si, Mo/Si, Pd/B{sub 4}C, Ru/B{sub 4}C), and numbers of layers have been compared. Particularly, we chose mirrors with similar intrinsic quality (roughness and reflectivity) to study their performance (flatness and coherence of the outgoing beam) as monochromators in synchrotron radiography. The results indicate that material composition is the dominating factor for the performance. This is important to consider for future developments in synchrotron-based hard x-ray imaging methods. In these techniques, multilayer monochromators are popular because of their good tradeoff between spectral bandwidth and photon flux density of the outgoing beam, but sufficient homogeneity and preservation of the coherent properties of the reflected beam are major concerns. The experimental results we collected may help scientists and engineers specify multilayer monochromators and can contribute to better exploitation of the advantages of multilayer monochromators in microtomography and other full-field imaging techniques.

  13. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

    SciTech Connect

    Ju, Sanghyun; Lee, Kangho; Janes, David B.; Dwivedi, Ramesh C.; Baffour-Awuah, Habibah; Wilkins, R.; Yoon, Myung-Han; Facchetti, Antonio; Mark, Tobin J.

    2006-08-14

    In this contribution, the radiation tolerance of single ZnO nanowire field-effect transistors (NW-FETs) fabricated with a self-assembled superlattice (SAS) gate insulator is investigated and compared with that of ZnO NW-FETs fabricated with a 60 nm SiO{sub 2} gate insulator. A total-radiation dose study was performed using 10 MeV protons at doses of 5.71 and 285 krad(Si). The threshold voltage (V{sub th}) of the SAS-based ZnO NW-FETs is not shifted significantly following irradiation at these doses. In contrast, V{sub th} parameters of the SiO{sub 2}-based ZnO NW-FETs display average shifts of {approx}-4.0 and {approx}-10.9 V for 5.71 and 285 krad(Si) H{sup +} irradiation, respectively. In addition, little change is observed in the subthreshold characteristics (off current, subthreshold slope) of the SAS-based ZnO NW-FETs following H{sup +} irradiation. These results strongly argue that the bulk oxide trap density and interface trap density formed within the SAS and/or at the SAS-ZnO NW interface during H{sup +} irradiation are significantly lower than those for the corresponding SiO{sub 2} gate dielectrics. The radiation-robust SAS-based ZnO NW-FETs are thus promising candidates for future space-based applications in electronics and flexible displays.

  14. The determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation

    NASA Technical Reports Server (NTRS)

    Von Roos, O.

    1985-01-01

    When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts of angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).

  15. Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Allen, R. A.; Blaes, B. R.; Hicks, K. A.; Jennings, G. A.; Lin, Y.-S.; Pina, C. A.; Sayah, H. R.; Zamani, N.

    1989-01-01

    Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

  16. Linear response theory for annealing of radiation damage in semiconductor devices

    NASA Technical Reports Server (NTRS)

    Litovchenko, Vitaly

    1988-01-01

    A theoretical study of the radiation/annealing response of MOS ICs is described. Although many experiments have been performed in this field, no comprehensive theory dealing with radiation/annealing response has been proposed. Many attempts have been made to apply linear response theory, but no theoretical foundation has been presented. The linear response theory outlined here is capable of describing a broad area of radiation/annealing response phenomena in MOS ICs, in particular, both simultaneous irradiation and annealing, as well as short- and long-term annealing, including the case when annealing is nearing completion. For the first time, a simple procedure is devised to determine the response function from experimental radiation/annealing data. In addition, this procedure enables us to study the effect of variable temperature and dose rate, effects which are of interest in spaceflight. In the past, the shift in threshold potential due to radiation/annealing has usually been assumed to depend on one variable: the time lapse between an impulse dose and the time of observation. While such a suggestion of uniformity in time is certainly true for a broad range of radiation annealing phenomena, it may not hold for some ranges of the variables of interest (temperature, dose rate, etc.). A response function is projected which is dependent on two variables: the time of observation and the time of the impulse dose. This dependence on two variables allows us to extend the theory to the treatment of a variable dose rate. Finally, the linear theory is generalized to the case in which the response is nonlinear with impulse dose, but is proportional to some impulse function of dose. A method to determine both the impulse and response functions is presented.

  17. Change in the thermionic work function of semiconductor powders exposed to electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Bourasseau, S.; Martin, J. R.; Juillet, F.; Teichner, S. J.

    1977-01-01

    The variations of the thermoelectronic work function of titanium dioxide, submitted to an ultraviolet or visible and infrared radiation, in the presence of oxygen, are studied by the vibrating condenser method. It is shown that during the ultraviolet irradiation, a desorption of a first species of oxygen simultaneously occurs with the adsorption of a second species of oxygen and that this phenomenon is found for any structure of TiO2 (anatase or rutile) any texture, oxygen pressure, radiation intensity, and nature of introduced dopes.

  18. Design of Si-photonic structures to evaluate their radiation hardness dependence on design parameters

    NASA Astrophysics Data System (ADS)

    Zeiler, M.; Detraz, S.; Olantera, L.; Pezzullo, G.; Seif El Nasr-Storey, S.; Sigaud, C.; Soos, C.; Troska, J.; Vasey, F.

    2016-01-01

    Particle detectors for future experiments at the HL-LHC will require new optical data transmitters that can provide high data rates and be resistant against high levels of radiation. Furthermore, new design paths for future optical readout systems for HL-LHC could be opened if there was a possibility to integrate the optical components with their driving electronics and possibly also the silicon particle sensors themselves. All these functionalities could potentially be combined in the silicon photonics technology which currently receives a lot of attention for conventional optical link systems. Silicon photonic test chips were designed in order to assess the suitability of this technology for deployment in high-energy physics experiments. The chips contain custom-designed Mach-Zehnder modulators, pre-designed ``building-block'' modulators, photodiodes and various other passive test structures. The simulation and design flow of the custom designed Mach-Zehnder modulators and some first measurement results of the chips are presented.

  19. Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

    NASA Technical Reports Server (NTRS)

    Garlick, G. F. J.

    1985-01-01

    The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

  20. 3D silicon sensors with variable electrode depth for radiation hard high resolution particle tracking

    NASA Astrophysics Data System (ADS)

    Da Vià, C.; Borri, M.; Dalla Betta, G.; Haughton, I.; Hasi, J.; Kenney, C.; Povoli, M.; Mendicino, R.

    2015-04-01

    3D sensors, with electrodes micro-processed inside the silicon bulk using Micro-Electro-Mechanical System (MEMS) technology, were industrialized in 2012 and were installed in the first detector upgrade at the LHC, the ATLAS IBL in 2014. They are the radiation hardest sensors ever made. A new idea is now being explored to enhance the three-dimensional nature of 3D sensors by processing collecting electrodes at different depths inside the silicon bulk. This technique uses the electric field strength to suppress the charge collection effectiveness of the regions outside the p-n electrodes' overlap. Evidence of this property is supported by test beam data of irradiated and non-irradiated devices bump-bonded with pixel readout electronics and simulations. Applications include High-Luminosity Tracking in the high multiplicity LHC forward regions. This paper will describe the technical advantages of this idea and the tracking application rationale.

  1. Investigation of temperature dependence of semiconductor detectors used in medicine for radiation measurements

    NASA Astrophysics Data System (ADS)

    Ozleyis Altunkok, Simay; Tuncel, Nina; Ucar, Nazim

    2015-07-01

    In this study, the temperature dependence of p-type semiconductor diodes that are a part of in-vivo dosimetry system was assessed in Co-60 photon energy. The collimator and gantry angle on zero degree, SSD 100 cm, field size 20x20 cm2 was selected. The IBA EDP-5, EDP-10 and EDP-20 diode types that included in this study have different thickness of build-up material so the depth of measurements at water equivalent phantom by FC65-p ion chamber was selected at 5, 10 and 20 mm. Along the process the room and phantom temperature was measured and recorded (19°C). The special water filled PMMA phantom was used for diode set-up on its surface and a thermometer for determine phantom temperature was employed. Each type of diodes irradiated separately for one minute and the signal to dose sensitivity and calibration was performed at room temperature (19°C) by OmniPro-InViDos software with DPD-12 electrometer. Examination was repeated from 33°C to 20°C temperatures. The temperature correction factors were found from slope of the linear drawings for each diode types. The obtained correction factor for EDP-5 and EDP-10 was 0.29 %°C/cGy and 0.30 %°C/cGy respectively, that higher than recommended factor (%0.25°C/cGy). While the more fluctuation for EDP-20 was realized.

  2. A Radiation Hard Multi-Channel Digitizer ASIC for Operation in the Harsh Jovian Environment

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid; Aslam, S.; Akturk, A.; Quilligan, G.

    2011-01-01

    ultimately impact the surface of Europa after the mission is completed. The current JEO mission concept includes a range of instruments on the payload, to monitor dynamic phenomena (such as Io's volcanoes and Jupiters atmosphere), map the Jovian magnetosphere and its interactions with the Galilean satellites, and characterize water oceans beneath the ice shells of Europa and Ganymede. The payload includes a low mass (3.7 Kg) and low power (< 5 W) Thermal Instrument (TI) concept for measuring possible warm thermal anomalies on Europa s cold surface caused by recent (< 10,000 years) eruptive activity. Regions of anomalously high heat flow will be identified by thermal mapping using a nadir pointing, push-broom filter radiometer that provides far-IR imagery in two broad band spectral wavelength regions, 8-20 m and 20-100 m, for surface temperature measurements with better than a 2 K accuracy and a spatial resolution of 250 m/pixel obtained from a 100 Km orbit. The temperature accuracy permits a search for elevated temperatures when combined with albedo information. The spatial resolution is sufficient to resolve Europa's larger cracks and ridge axial valleys. In order to accomplish the thermal mapping, the TI uses sensitive thermopile arrays that are readout by a custom designed low-noise Multi-Channel Digitizer (MCD) ASIC that resides very close to the thermopile linear array outputs. Both the thermopile array and the MCD ASIC will need to show full functionality within the harsh Jovian radiation environment, operating at cryogenic temperatures, typically 150 K to 170 K. In the following, a radiation mitigation strategy together with a low risk Radiation-Hardened-By-Design (RHBD) methodology using commercial foundry processes is given for the design and manufacture of a MCD ASIC that will meet this challenge.

  3. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Sekonya, K.; Solvyanov, O.

    2015-10-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy and light yield analysis whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs and light loss can be attributed to a breakdown in the light transfer between base and fluor dopants. For doses of 8 MGy to 80 MGy, structural damage leads to possible hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss and light yield loss with increasing dose.

  4. Radiation hardness of plastic scintillators for the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Jivan, H.; Mellado, B.; Sideras-Haddad, E.; Erasmus, R.; Liao, S.; Madhuku, M.; Peters, G.; Solvyanov, O.

    2015-06-01

    The radiation damage in polyvinyl toluene based plastic scintillator EJ200 obtained from ELJEN technology was investigated. This forms part of a comparative study conducted to aid in the upgrade of the Tile Calorimeter of the ATLAS detector during which the Gap scintillators will be replaced. Samples subjected to 6 MeV proton irradiation using the tandem accelerator of iThemba LABS, were irradiated with doses of approximately 0.8 MGy, 8 MGy, 25 MGy and 80 MGy. The optical properties were investigated using transmission spectroscopy whilst structural damage was assessed using Raman spectroscopy. Findings indicate that for the dose of 0.8 MGy, no structural damage occurs but a breakdown in the light transfer between base and fluor dopants is observed. For doses of 8 MGy to 80 MGy, structural damage leads to hydrogen loss in the benzene ring of the PVT base which forms free radicals. This results in an additional absorptive component causing increased transmission loss as dose is increased.

  5. Variation in the thermionic work function of semiconductor powders exposed to electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Bourasseau, S.; Martin, J. R.; Juillet, F.; Teichner, S. J.

    1977-01-01

    The study of the variation of thermoelectronic work function potential of TiO2 in the presence of isobutane shows that this gas is not adsorbed on this solid, in either the presence or the absence of ultraviolet radiation. These results, as well as those obtained in a previous work, lead to the mechanism of the photo-oxidation of isobutane at room temperature, in which excited atomic oxygen is the active species.

  6. Total-dose radiation effects data for semiconductor devices, volume 3

    NASA Technical Reports Server (NTRS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1982-01-01

    Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

  7. Total-dose radiation effects data for semiconductor devices, volume 3

    NASA Astrophysics Data System (ADS)

    Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

    1982-09-01

    Volume 3 of this three-volume set provides a detailed analysis of the data in Volumes 1 and 2, most of which was generated for the Galileo Orbiter Program in support of NASA space programs. Volume 1 includes total ionizing dose radiation test data on diodes, bipolar transistors, field effect transistors, and miscellaneous discrete solid-state devices. Volume 2 includes similar data on integrated circuits and a few large-scale integrated circuits. The data of Volumes 1 and 2 are combined in graphic format in Volume 3 to provide a comparison of radiation sensitivities of devices of a given type and different manufacturer, a comparison of multiple tests for a single data code, a comparison of multiple tests for a single lot, and a comparison of radiation sensitivities vs time (date codes). All data were generated using a steady-state 2.5-MeV electron source (Dynamitron) or a Cobalt-60 gamma ray source. The data that compose Volume 3 represent 26 different device types, 224 tests, and a total of 1040 devices. A comparison of the effects of steady-state electrons and Cobat-60 gamma rays is also presented.

  8. Understanding the role of buried interface charges in a metal-oxide-semiconductor stack of Ti/Al{sub 2}O{sub 3}/Si using hard x-ray photoelectron spectroscopy

    SciTech Connect

    Church, J. R.; Opila, R. L.; Weiland, C.

    2015-04-27

    Hard X-ray photoelectron spectroscopy (HAXPES) analyses were carried out on metal-oxide-semiconductor (MOS) samples consisting of Si, thick and thin Al{sub 2}O{sub 3}, and a Ti metal cap. Using Si 1s and C 1s core levels for an energy reference, the Al 1s and Si 1s spectra were analyzed to reveal information about the location and roles of charges throughout the MOS layers. With different oxide thicknesses (2 nm and 23 nm), the depth sensitivity of HAXPES is exploited to probe different regions in the MOS structure. Post Ti deposition results indicated unexpected band alignment values between the thin and thick films, which are explained by the behavior of mobile charge within the Al{sub 2}O{sub 3} layer.

  9. Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

    NASA Technical Reports Server (NTRS)

    Leopold, Daniel J.

    2002-01-01

    The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

  10. Novel Surface Preparation and Contacts for CdZnTe Nuclear Radiation Detectors Using Patterned Films of Semiconductors and Insulators

    NASA Astrophysics Data System (ADS)

    Burger, Arnold; Groza, Michael; Conway, Adam; Payne, Steve

    2013-04-01

    The semiconductor Cadmium Zinc Telluride (CZT) has emerged as the material of choice for room temperature detection of X-rays and gamma-rays. The detectors will cover the energy range from 30 keV to several MeV, and will achieve excellent 662 keV energy resolution. The development of high resolution gamma ray detectors based on CZT is dependent on low electronic noise levels. One common source of noise is the surface leakage current, which limits the performance of advanced readout schemes such as the coplanar grid and pixelated architectures with steering grids. Excessive bulk leakage current can result from one of several surface effects: leaky native oxides, unsatisfied bonds, and surface damage. We propose to fabricate and test oriented [111] CZT crystals with thicknesses up to 1.5 cm with an innovative detection technique based on co-planar or other electron only transport designs using plasma processing, thin film sputtering, chemical passivation and wet etching techniques. Compared to conventional pixel detectors, the proposed contact configuration needs lower power consumption and a lower cost. The detector design can be used for building very low-cost handheld radiation detection devices.

  11. Time dependence of FEL-induced surface photovoltage on semiconductor interfaces measured with synchroton radiation photoemission spectroscopy

    SciTech Connect

    Marsi, M.; Delboulbe, A.; Garzella, D.

    1995-12-31

    During the last year, the first surface science experiments simultaneously using a Free Electron Laser (FEL) and Synchrotron Radiation (SR) have been performed on SuperACO at LURE (Orsay, France). These {open_quotes}two color{close_quotes} experiments studied the surface photovoltage (SPV) induced on semiconductor surfaces and interfaces by the SuperACO FEL, a storage ring FEL delivering 350 nm photons which am naturally synchronized with the SR; the SPV was measured by synchrotron radiation core-level photoemission spectroscopy on the high-resolution SU3 undulator beamline. We will describe the experimental setup, which allowed us to convey the FEL light onto the samples sitting in the SU3 experimental station by means of a series of mirrors, and show the results we obtained for prototypical systems such as Ag/GaAs(110) and Si(111) 2 x 1. The dependence of the SPV was studied in function of various parameters, changing sample doping and photon flux; but our efforts were mainly devoted to studying its dependence on the time delay between the FEL pump and the SR probe. On SuperACO, such delay can be varied between 1 and 120 ns, the limits being given by the time duration of a SR pulse and by the interval between two consecutive positron bunches, respectively. The results show a clear temporal dependence of the amount of SPV on cleaved Si surfaces, where as the Ag/GaAs(110) does not show any difference on the ns time scale. We will discuss these results in terms of the role of surface recombination in the dynamics of the photoinduced electron-hole pairs. These studies follow the evolution of the density of electrostatic charge at surfaces and interfaces on a nanosecond time scale, and might pave the way for a new series of experiments: for example, one might explore what are the physical mechanisms limiting the time response of Schottky diodes.

  12. A seven-crystal Johann-type hard x-ray spectrometer at the Stanford Synchrotron Radiation Lightsource

    SciTech Connect

    Sokaras, D.; Weng, T.-C.; Nordlund, D.; Velikov, P.; Wenger, D.; Garachtchenko, A.; George, M.; Borzenets, V.; Johnson, B.; Rabedeau, T.; Alonso-Mori, R.; Bergmann, U.

    2013-05-15

    We present a multicrystal Johann-type hard x-ray spectrometer ({approx}5-18 keV) recently developed, installed, and operated at the Stanford Synchrotron Radiation Lightsource. The instrument is set at the wiggler beamline 6-2 equipped with two liquid nitrogen cooled monochromators - Si(111) and Si(311) - as well as collimating and focusing optics. The spectrometer consists of seven spherically bent crystal analyzers placed on intersecting vertical Rowland circles of 1 m of diameter. The spectrometer is scanned vertically capturing an extended backscattering Bragg angular range (88 Degree-Sign -74 Degree-Sign ) while maintaining all crystals on the Rowland circle trace. The instrument operates in atmospheric pressure by means of a helium bag and when all the seven crystals are used (100 mm of projected diameter each), has a solid angle of about 0.45% of 4{pi} sr. The typical resolving power is in the order of (E/{Delta}E){approx}10 000. The spectrometer's high detection efficiency combined with the beamline 6-2 characteristics permits routine studies of x-ray emission, high energy resolution fluorescence detected x-ray absorption and resonant inelastic x-ray scattering of very diluted samples as well as implementation of demanding in situ environments.

  13. Semiconductor structure

    NASA Technical Reports Server (NTRS)

    Hovel, Harold J. (Inventor); Woodall, Jerry M. (Inventor)

    1979-01-01

    A technique for fabricating a semiconductor heterostructure by growth of a ternary semiconductor on a binary semiconductor substrate from a melt of the ternary semiconductor containing less than saturation of at least one common ingredient of both the binary and ternary semiconductors wherein in a single temperature step the binary semiconductor substrate is etched, a p-n junction with specific device characteristics is produced in the binary semiconductor substrate by diffusion of a dopant from the melt and a region of the ternary semiconductor of precise conductivity type and thickness is grown by virtue of a change in the melt characteristics when the etched binary semiconductor enters the melt.

  14. Beta Backscatter Measures the Hardness of Rubber

    NASA Technical Reports Server (NTRS)

    Morrissey, E. T.; Roje, F. N.

    1986-01-01

    Nondestructive testing method determines hardness, on Shore scale, of room-temperature-vulcanizing silicone rubber. Measures backscattered beta particles; backscattered radiation count directly proportional to Shore hardness. Test set calibrated with specimen, Shore hardness known from mechanical durometer test. Specimen of unknown hardness tested, and radiation count recorded. Count compared with known sample to find Shore hardness of unknown.

  15. Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride

    SciTech Connect

    Trivedi, Sudhir B; Kutcher, Susan W; Palsoz, Witold; Berding, Martha; Burger, Arnold

    2014-11-17

    The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.

  16. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-01-01

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  17. Radiation hard vacuum switch

    DOEpatents

    Boettcher, Gordon E.

    1990-03-06

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

  18. Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

    NASA Astrophysics Data System (ADS)

    Bardi, Marcelo Augusto Gonçalves; Machado, Luci Diva Brocardo

    2012-09-01

    In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films.

  19. Comparisons of exact results for the virtual photon contribution to single hard bremsstrahlung in radiative return for e{sup +}e{sup -} annihilation

    SciTech Connect

    Jadach, S.; Ward, B.F.L.; Yost, S.A.

    2006-04-01

    We compare fully differential exact results for the virtual photon correction to single hard photon bremsstrahlung obtained using independent calculations, both for e{sup +}e{sup -} annihilation at high-energy colliders and for radiative return applications. The results are compared using Monte Carlo evaluations of the matrix elements as well as by direct analytical evaluation of certain critical limits. Special attention is given to the issues of numerical stability and the treatment of finite-mass corrections. It is found that agreement on the order of 10{sup -5} or better is obtained over most of the range of hard photon energies, at CMS energies relevant to both high-energy collisions and radiative return experiments.

  20. Semiconductor Reliability--Another Field for Physicists.

    ERIC Educational Resources Information Center

    Derman, Samuel; Anderson, Wallace T.

    1994-01-01

    Stresses that an important industrial area is product reliability, especially for semiconductors. Suggests that physics students would benefit from training in semiconductors: the many modes of failure, radiation effects, and electrical contact problems. (MVL)

  1. Semiconductor crystal high resolution imager

    NASA Technical Reports Server (NTRS)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  2. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with {open_quotes}single carrier{close_quotes} response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security.

  3. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray

    SciTech Connect

    Ruddy, Frank H.

    2005-06-01

    Work scheduled under year two of DOE Grant DE-FG02-04ER63734 is on schedule and all year-two milestones have or will be met. Results to date demonstrate that unprecedented silicon carbide (SiC) energy resolution has been obtained, and that SiC detectors may achieve energy resolution that exceeds that obtainable with the best silicon alpha spectrometers. Fast-neutron energy spectrometry measurements indicate that recoil-ion energy spectrometry should be possible with SiC detectors. Furthermore, SiC detectors have been demonstrated to perform well even after gamma-ray exposures of 1.E09 Rad. This result and the previously demonstrated capability of SiC detectors to operate in elevated-temperature environments are very promising for potential DOE EMSP applications. A new class of multipurpose, radiation-resistant semiconductor detectors that can be used in elevated-temperature and high-radiation environments is being developed under this grant. These detectors, based on silicon carbide (SiC) semiconductor are designed to have larger active volumes than previously available SiC detectors, and are being tested for their response to alpha particles, X-rays and low energy gamma rays, and fast neutrons.

  4. A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

    SciTech Connect

    Wright, M.; Millaud, J.; Nygren, D.

    1992-10-01

    A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application.

  5. Theory of the dynamic response of a coplanar grid semiconductor detector

    SciTech Connect

    Kozorezov, A. G.; Wigmore, J. K.; Owens, A.; Peacock, A.

    2007-07-09

    The authors have developed a theoretical model for the response of a coplanar grid semiconductor detector to hard x- and {gamma}-ray radiation. Carrier drift trajectories were obtained by solving the coupled dynamical equations for carriers driven by electrostatic fields of the coplanar grid configuration. The pulse spectra calculated by summing the individual contributions for all carriers are compared to experimental results for a large volume optimized cadmium zinc telluride coplanar grid detector and good agreement is obtained.

  6. Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

    SciTech Connect

    Ziock, H.J.; Milner, C.; Sommer, W.F. ); Carteglia, N.; DeWitt, J.; Dorfan, D.; Hubbard, B.; Leslie, J.; O'Shaughnessy, K.F.; Pitzl, D.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. . Inst. for Particle Physics); Ellison, J.A. ); Ferguson, P. ); Giubellino

    1990-01-01

    As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

  7. X-ray emission from cataclysmic variables with accretion disks. I - Hard X-rays. II - EUV/soft X-ray radiation

    NASA Technical Reports Server (NTRS)

    Patterson, J.; Raymond, J. C.

    1985-01-01

    Theoretical models explaining the hard-X-ray, soft-X-ray, and EUV emission of accretion-disk cataclysmic variables in terms of the disk boundary layer (DBL) are developed on the basis of a survey of the published observational data. The data are compared with model predictions in graphs for systems with high or low (greater than or less than 10-Pg/s) accretion rates. Good agreement is obtained both at low accretion rates, where an optically thin rarefied hot (Te = 10 to the 8th K) DBL radiates most of its energy as hard X-rays, and at high accretion rates, where an optically thick 100,000-K DBL radiates most of its energy in the EUV and as soft X-rays. Detailed analysis of the old nova V603 Aql suggests that previous models predicting more detections of soft-X-ray/EUV emissions from thick-DBL objects (Ferland et al., 1982) used inappropriate dwarf masses, interstellar column densities, or classical-nova space densities.

  8. Wide Band-Gap Semiconductor Radiation Detectors: Science Fiction, Horror Story, or Headlines (460th Brookhaven Lecture)

    SciTech Connect

    James, Ralph

    2010-08-18

    With radiation constantly occurring from natural sources all around us -- from food, building materials, and rays from the sun, to name a few -- detecting radiotracers for medical procedures and other radiation to keep people safe is not easy. In order to make better use of radiation to diagnose or treat certain health conditions, or to track radiological materials being transported, stored, and used, the quest is on to develop improved radiation detectors. James gives a brief introduction on radiation detection and explain how it is used in applications ranging from medical to homeland security. He then discusses how new materials and better ways to analyze them here at the National Synchrotron Light Source (NSLS) and the future NSLS-II will lead to a new class of radiation detectors that will provide unprecedented advances in medical and industrial imaging, basic science, and the nonproliferation of nuclear materials.

  9. Hard x-ray scanning microscopy with coherent radiation: Beyond the resolution of conventional x-ray microscopes

    SciTech Connect

    Schropp, A.; Hoppe, R.; Patommel, J.; Samberg, D.; Seiboth, F.; Stephan, S.; Schroer, C. G.; Wellenreuther, G.; Falkenberg, G.

    2012-06-18

    We demonstrate x-ray scanning coherent diffraction microscopy (ptychography) with 10 nm spatial resolution, clearly exceeding the resolution limits of conventional hard x-ray microscopy. The spatial resolution in a ptychogram is shown to depend on the shape (structure factor) of a feature and can vary for different features in the object. In addition, the resolution and contrast are shown to increase with increasing coherent fluence. For an optimal ptychographic x-ray microscope, this implies a source with highest possible brilliance and an x-ray optic with a large numerical aperture to generate the optimal probe beam.

  10. Terahertz radiation from InAlAs and GaAs surface intrinsic-N+ structures and the critical electric fields of semiconductors

    NASA Astrophysics Data System (ADS)

    Hwang, J. S.; Lin, H. C.; Lin, K. I.; Zhang, X. C.

    2005-09-01

    This study examines terahertz radiation from a series of In0.52Al0.48As and GaAs surface-intrinsic-N+ structures (SIN+) with surface-intrinsic layers of various thicknesses. The built-in electric fields in the SIN+ structures are used as the bias. Experimental results indicate that the amplitudes of the THz emission are independent of the built-in electric fields in the emitters when the built-in electric fields exceed the corresponding critical electric fields of the semiconductors. In contrast, the amplitudes of the THz emission are proportional to the thickness of the intrinsic layer and, therefore, the number of photo-excited charged carriers.

  11. The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistor

    SciTech Connect

    Benson, Chris; Albadri, Abdulrahman; Joyce, Malcolm J.; Price, Robert A.

    2006-08-15

    The dependence of radiation-induced charge neutralization (RICN) has been studied in metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters. These devices were first exposed to x rays under positive bias and then to further dose increments at a selection of reverse bias levels. A nonlinear empirical trend has been established that is consistent with that identified in the data obtained in this work. Estimates for the reverse bias level corresponding to the maximum rate of RICN have been extracted from the data. These optimum bias levels appear to be independent of the level of initial absorbed dose under positive bias. The established models for threshold voltage change have been considered and indicate a related nonlinear trend for neutralization cross section {sigma}{sub N} as a function of oxide field. These data are discussed in the context of dose measurement with MOSFETs and within the framework of statistical mechanics associated with neutral traps and their field dependence.

  12. On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate

    SciTech Connect

    Kolpakov, D. A. Zvonkov, B. N.; Nekorkin, S. M.; Dikareva, N. V.; Aleshkin, V. Ya.; Dubinov, A. A.

    2015-11-15

    A multiwell interband cascade laser with a tunnel junction within a single waveguide and radiation emission through the substrate is implemented for the first time. It is shown that such a laser heterostructure design provides the more efficient population of quantum wells in comparison with a conventional multiwell laser with radiation emission through the substrate, due to which the lasing threshold is significantly lowered.

  13. Theoretical Studies on Bond Properties and Hardness of ABC2 (a = Zn, Cd, Cu, Ag; B = Si, Ge, Sn; C = P, As, S, Se, Te) Semiconductor with Chalcopyrites Structure

    NASA Astrophysics Data System (ADS)

    Zhao, Guangping; Yu, Bingjie

    2012-07-01

    The chemical bond parameters of II-IV-V2 and I-III-VI2 compounds have calculated using the chemical bond theory of complex crystals. Their hardnesses have been predicted by the chemical bond definition of hardness. The calculated results are in agreement with their experimental values. The calculation of hardness indicates that all of compounds possess good mechanical properties.

  14. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray

    SciTech Connect

    Ruddy, Frank H.

    2005-06-01

    Work scheduled under year two of DOE Grant DE-FG02-04ER63734 is on schedule and all year-two milestones have or will be met. Results to date demonstrate that unprecedented silicon carbide (SiC) energy resolution has been obtained, and that SiC detectors may achieve energy resolution that exceeds that obtainable with the best silicon alpha spectrometers. Fast-neutron energy spectrometry measurements indicate that recoil-ion energy spectrometry should be possible with SiC detectors. Furthermore, SiC detectors have been demonstrated to perform well even after gamma-ray exposures of 1.E09 Rad. This result and the previously demonstrated capability of SiC detectors to operate in elevated-temperature environments are very promising for potential DOE EMSP applications. A new class of multipurpose, radiation-resistant semiconductor detectors that can be used in elevated-temperature and high-radiation environments is being developed under this grant. These detectors, based on silicon carbide (SiC) semiconductor are designed to have larger active volumes than previously available SiC detectors, and are being tested for their response to alpha particles, X-rays and low energy gamma rays, and fast neutrons. Specifically, SiC radiation detectors with larger areas and 100-micrometer thick active regions have been designed and manufactured according to detector-design specifications. Detectors based on a Schottky diode design were specified in order to minimize the effects of the detector entrance window on alpha particle measurements. During manufacture of the Schottky diodes, the manufacturer also provided a set of large-volume SiC p-i-n diodes for testing Extensive alpha particle measurements have been carried out to test and quantify the response of the SiC Schottky diodes. Exposures to 148-Gd, 213-Po, 217-At, 221-Fr, 225-Ac, 237-Np, 238-Pu, 240-Pu, and 242-Pu sources were used to obtain detailed alpha response data in the alpha energy range from 3182.787 keV to 8375.9 ke

  15. Magnetic field effects on the Rabi splitting and radiative decay rates of the exciton-polariton states in a semiconductor microcavity

    NASA Astrophysics Data System (ADS)

    Fenniche, H.; Jaziri, S.; Bennaceur, R.

    1998-12-01

    We study theoretically a particular type of semiconductor microcavity formed by a quantum well embedded inside it and the distributed Bragg reflectors presenting a gradual structure. We apply to this structure a static magnetic field along the growth direction. In the strong coupling regime between the confined exciton and cavity modes, we evaluate the polariton Rabi splitting corresponding to the two lowest lying exciton states: HH1-CB1 and HH2-CB2 as a function of the applied magnetic field. In high magnetic field and for distinct reflectivities, we find that the Rabi splitting magnitude of the HH2-CB2 exciton is close to the fundamental one (HH1-CB1). In the presence of the magnetic field, the polariton Rabi splitting can be obtained even in low reflectivity. The dispersion polariton radiative decay rates related to the two lowest lying exciton states: HH1-CB1 and HH2-CB2 are calculated for different magnetic field values. At k //=0 and in the weak coupling regime, the polariton radiative decay rates are evaluated for both the HH1-CB1 and HH2-CB2 excitons. We show that for the fundamental excitonic state, the magnetic field value which determines the transition from the weak to the strong coupling regime is different from the HH2-CB2 exciton state.

  16. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray

    SciTech Connect

    Ruddy, Frank H

    2005-06-01

    Work scheduled under year two of DOE Grant DE-FG02-04ER63734 is on schedule and all year-two milestones have or will be met. Results to date demonstrate that unprecedented silicon carbide (SiC) energy resolution has been obtained, and that SiC detectors may achieve energy resolution that exceeds that obtainable with the best silicon alpha spectrometers. Fast-neutron energy spectrometry measurements indicate that recoil-ion energy spectrometry should be possible with SiC detectors. Furthermore, SiC detectors have been demonstrated to perform well even after gamma-ray exposures of 1.E09 Rad. This result and the previously demonstrated capability of SiC detectors to operate in elevated-temperature environments are very promising for potential DOE EMSP applications. A new class of multipurpose, radiation-resistant semiconductor detectors that can be used in elevated-temperature and high-radiation environments is being developed under this grant.

  17. Thermal Radiometer Signal Processing Using Radiation Hard CMOS Application Specific Integrated Circuits for Use in Harsh Planetary Environments

    NASA Technical Reports Server (NTRS)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-01-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-sq cm/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  18. Thermal Radiometer Signal Processing using Radiation Hard CMOS Application Specific Integrated Circuits for use in Harsh Planetary Environments

    NASA Astrophysics Data System (ADS)

    Quilligan, G.; DuMonthier, J.; Aslam, S.; Lakew, B.; Kleyner, I.; Katz, R.

    2015-10-01

    Thermal radiometers such as proposed for the Europa Clipper flyby mission [1] require low noise signal processing for thermal imaging with immunity to Total Ionizing Dose (TID) and Single Event Latchup (SEL). Described is a second generation Multi- Channel Digitizer (MCD2G) Application Specific Integrated Circuit (ASIC) that accurately digitizes up to 40 thermopile pixels with greater than 50 Mrad (Si) immunity TID and 174 MeV-cm2/mg SEL. The MCD2G ASIC uses Radiation Hardened By Design (RHBD) techniques with a 180 nm CMOS process node.

  19. Bread-Board Testing of the Radiation Hard Electron Monitor (RADEM) being developed for the ESA JUICE Mission

    NASA Astrophysics Data System (ADS)

    Mrigakshi, Alankrita; Hajdas, Wojtek; Marcinkowski, Radoslaw; Xiao, Hualin; Goncalves, Patricia; Pinto, Marco; Pinto, Costa; Marques, Arlindo; Meier, Dirk

    2016-04-01

    The RADEM instrument will serve as the radiation monitor for the JUICE spacecraft. It will characterize the highly dynamic radiation environment of the Jovian system by measuring the energy spectra of energetic electrons and protons up to 40 MeV and 250 MeV, respectively. It will also determine the directionality of 0.3-10 MeV electrons. Further goals include the detection of heavy ions, and the determination of the corresponding LET spectra and dose rates. Here, the tests of the Electron and Proton Telescopes, and the Directionality Detector of the RADEM Bread-Board model are described. The objective of these tests is to validate RADEM design and physical concept applied therein. The tests were performed at various irradiation facilities at the Paul Scherrer Institute (PSI) where energy ranges relevant for space applications can be covered (electrons: ≤100 MeV and protons: ≤230 MeV). The measured values are also compared with GEANT4 Monte-Carlo Simulation results.

  20. Semiconductor sensors

    NASA Technical Reports Server (NTRS)

    Gatos, Harry C. (Inventor); Lagowski, Jacek (Inventor)

    1977-01-01

    A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

  1. Characterisation of a radiation hard front-end chip for the vertex detector of the LHCb experiment at CERN

    NASA Astrophysics Data System (ADS)

    van Bakel, N.; Baumeister, D.; van Beuzekom, M.; Bulten, H. J.; Feuerstack-Raible, M.; Jans, E.; Ketel, T.; Klous, S.; Löchner, S.; Sexauer, E.; Smale, N.; Snoek, H.; Trunk, U.; Verkooijen, H.

    2003-08-01

    The Beetle is a 128 channel analog pipelined readout chip which is intended for use in the silicon vertex locator (VELO) of the LHCb experiment at CERN. The Beetle chip is specially designed to withstand high radiation doses. Two Beetle1.1 chips bonded to a silicon strip detector have been tested with minimum ionizing particles. The main goal was to measure the signal-to-noise (S/N) ratio of the Beetle1.1 connected to a prototype VELO detector. Furthermore we investigated the general behaviour of the Beetle1.1. In this note we present the chip architecture, the measured (S/N) numbers as well as some characteristics (e.g. risetime, spillover) of the Beetle1.1 chip. Results from a total ionizing dose irradiation test are reported.

  2. The effect of hard/soft segment composition on radiation stability of poly(ester-urethane)s

    NASA Astrophysics Data System (ADS)

    Walo, Marta; Przybytniak, Grażyna; Łyczko, Krzysztof; Piątek-Hnat, Marta

    2014-01-01

    In this paper studies on the structures and radiation stability of four poly(ester-urethane)s (PUR)s synthesized from oligo(ethylene-butylene adipate)diol of various molecular weights and isophorone diisocyanate/1,4-butanediol are reported. PURs with 40 and 60 wt% soft segments were irradiated at ambient temperature with a high energy electron beam to a dose of 112 kGy. The effect of different segmental compositions on thermal and mechanical properties of polyurethanes, both before and after irradiation, were investigated using mechanical testing and dynamic mechanical thermal analysis. ATR-FTIR spectroscopy was used to study the progress of polycondensation, structure of synthesized polymers and extent of phase separation were determined on a basis of the contribution of hydrogen bonding in poly(ester-urethane)s. Correlation between degree of phase separation and mechanical and thermal properties of poly(ester-urethane)s was found.

  3. The development of a high count rate neutron flux monitoring channel using silicon carbide semiconductor radiation detectors

    NASA Astrophysics Data System (ADS)

    Reisi Fard, Mehdi

    In this dissertation, a fast neutron flux-monitoring channel, which is based on the use of SiC semiconductor detectors is designed, modeled and experimentally evaluated as a power monitor for the Gas Turbine Modular Helium Reactors. A detailed mathematical model of the SiC diode detector and the electronic processing channel is developed using TRIM, MATLAB and PSpice simulation codes. The flux monitoring channel is tested at the OSU Research Reactor. The response of the SiC neutron-monitoring channel to neutrons is in close agreement to simulation results. Linearity of the channel response to thermal and fast neutron fluxes, pulse height spectrum of the channel, energy calibration of the channel and the detector degradation in a fast neutron flux are presented. Along with the model of the neutron monitoring channel, a Simulink model of the GT-MHR core has been developed to evaluate the power monitoring requirements for the GT-MHR that are most demanding for the SiC diode power monitoring system. The Simulink model is validated against a RELAP5 model of the GT-MHR. This dyanamic model is used to simulate reactor transients at the full power and at the start up, in order to identify the response time requirements of the GT-MHR. Based on the response time requirements that have been identified by the Simulink model and properties of the monitoring channel, several locations in the central reflector and the reactor cavity are identified to place the detector. The detector lifetime and dynamic range of the monitoring channel at the detector locations are calculated. The channel dynamic range in the GT-MHR central reflector covers four decades of the reactor power. However, the detector does not survive for a reactor refueling cycle in the central reflector. In the reactor cavity, the detector operates sufficiently long; however, the dynamic range of the channel is smaller than the dynamic range of the channel in the central reflector.

  4. Surface passivation process of compound semiconductor material using UV photosulfidation

    DOEpatents

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  5. Advanced radiation detector development: Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Annual progress report, September 30, 1994--September 29, 1995

    SciTech Connect

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. The general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, the authors have worked primarily in the development of semiconductor spectrometers with ``single carrier`` response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. They have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in the laboratory in the Phoenix Building on the North Campus.

  6. The Hard X-ray Imager (HXI) for the ASTRO-H Mission

    NASA Astrophysics Data System (ADS)

    Sato, Goro; Kokubun, Motohide; Nakazawa, Kazuhiro; Enoto, Teruaki; Fukazawa, Yasushi; Harayama, Atsushi; Hayashi, Katsuhiro; Kataoka, Jun; Katsuta, Junichiro; Kawaharada, Madoka; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Makishima, Kazuo; Mizuno, Tsunefumi; Mori, Kunishiro; Nakamori, Takeshi; Noda, Hirofumi; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Saito, Shinya; Sato, Rie; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shinichiro; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Watanabe, Shin; Yamaoka, Kazutaka; Yatsu, Yoichi; Yuasa, Takayuki

    2014-07-01

    The 6th Japanese X-ray satellite, ASTRO-H, is scheduled for launch in 2015. The hard X-ray focusing imaging system will observe astronomical objects with the sensitivity for detecting point sources with a brightness of 1/100,000 times fainter than the Crab nebula at > 10 keV. The Hard X-ray Imager (HXI) is a focal plane detector 12 m below the hard X-ray telescope (HXT) covering the energy range from 5 to 80 keV. The HXI is composed of a stacked Si/CdTe semiconductor detector module and surrounding BGO scintillators. The latter work as active shields for efficient reduction of background events caused by cosmic-ray particles, cosmic X-ray background, and in-orbit radiation activation. In this paper, we describe the detector system, and present current status of flight model development, and performance of HXI using an engineering model of HXI.

  7. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation.

    PubMed

    Hahn, C; Weber, G; Märtin, R; Höfer, S; Kämpfer, T; Stöhlker, Th

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays - such as laser-generated plasmas - is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse. PMID:27131653

  8. Uranium hohlraum with an ultrathin uranium-nitride coating layer for low hard x-ray emission and high radiation temperature

    NASA Astrophysics Data System (ADS)

    Guo, Liang; Ding, Yongkun; Xing, Pifeng; Li, Sanwei; Kuang, Longyu; Li, Zhichao; Yi, Taimin; Ren, Guoli; Wu, Zeqing; Jing, Longfei; Zhang, Wenhai; Zhan, Xiayu; Yang, Dong; Jiang, Baibin; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen; Li, Yongsheng; Liu, Jie; Huo, Wenyi; Lan, Ke

    2015-11-01

    An ultrathin layer of uranium nitrides (UN) has been coated on the inner surface of depleted uranium hohlraum (DUH), which has been proven by our experiment to prevent the oxidization of uranium (U) effectively. Comparative experiments between the novel depleted uranium hohlraum and pure golden (Au) hohlraum are implemented on an SGIII-prototype laser facility. Under a laser intensity of 6 × 1014 W cm-2, we observe that the hard x-ray (hν \\gt 1.8 keV) fraction of the uranium hohlraum decreases by 61% and the peak intensity of the total x-ray flux (0.1 keV˜5.0 keV) increases by 5%. Radiation hydrodynamic code LARED is used to interpret the above observations. Our result for the first time indicates the advantages of the UN-coated DUH in generating a uniform x-ray source with a quasi-Planckian spectrum, which should have important applications in high energy density physics.

  9. CLARO-CMOS: a fast, low power and radiation-hard front-end ASIC for single-photon counting in 0.35 micron CMOS technology

    NASA Astrophysics Data System (ADS)

    Andreotti, M.; Baldini, W.; Calabrese, R.; Carniti, P.; Cassina, L.; Cotta Ramusino, A.; Fiorini, M.; Giachero, A.; Gotti, C.; Luppi, E.; Maino, M.; Malaguti, R.; Pessina, G.; Tomassetti, L.

    2015-01-01

    The CLARO-CMOS is a prototype ASIC designed for fast photon counting with multi-anode photomultiplier tubes (MaPMT). The CLARO features a 5 ns peaking time, a recovery time to baseline smaller than 25 ns, and a power consumption of less than 1 mW per channel. The chip was designed in 0.35 μm CMOS technology, and was tested for radiation hardness with neutrons up to 1014 1 MeV neq/cm2, X-rays up to 40 kGy and protons up to 76 kGy. Its capability to read out single photons at high rate from a Hamamatsu R11265 MaPMT, the baseline photon detector for the LHCb RICH upgrade, was demonstrated both with test bench measurements and with actual signals from a R11265 MaPMT. The presented results allowed CLARO to be chosen as the front-end readout chip in the upgraded LHCb RICH detector.

  10. CdTe Timepix detectors for single-photon spectroscopy and linear polarimetry of high-flux hard x-ray radiation

    NASA Astrophysics Data System (ADS)

    Hahn, C.; Weber, G.; Märtin, R.; Höfer, S.; Kämpfer, T.; Stöhlker, Th.

    2016-04-01

    Single-photon spectroscopy of pulsed, high-intensity sources of hard X-rays — such as laser-generated plasmas — is often hampered by the pileup of several photons absorbed by the unsegmented, large-volume sensors routinely used for the detection of high-energy radiation. Detectors based on the Timepix chip, with a segmentation pitch of 55 μm and the possibility to be equipped with high-Z sensor chips, constitute an attractive alternative to commonly used passive solutions such as image plates. In this report, we present energy calibration and characterization measurements of such devices. The achievable energy resolution is comparable to that of scintillators for γ spectroscopy. Moreover, we also introduce a simple two-detector Compton polarimeter setup with a polarimeter quality of (98 ± 1)%. Finally, a proof-of-principle polarimetry experiment is discussed, where we studied the linear polarization of bremsstrahlung emitted by a laser-driven plasma and found an indication of the X-ray polarization direction depending on the polarization state of the incident laser pulse.

  11. A radiation hard vacuum switch

    DOEpatents

    Boettcher, G.E.

    1988-07-19

    A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction. 3 figs.

  12. [{sup 18}F]fluoromisonidazole and a New PET System With Semiconductor Detectors and a Depth of Interaction System for Intensity Modulated Radiation Therapy for Nasopharyngeal Cancer

    SciTech Connect

    Yasuda, Koichi; Onimaru, Rikiya; Okamoto, Shozo; Shiga, Tohru; Katoh, Norio; Tsuchiya, Kazuhiko; Suzuki, Ryusuke; Takeuchi, Wataru; Kuge, Yuji; Tamaki, Nagara; Shirato, Hiroki

    2013-01-01

    Purpose: The impact of a new type of positron emission tomography (New PET) with semiconductor detectors using {sup 18}F-labeled fluoromisonidazole (FMISO)-guided intensity modulated radiation therapy (IMRT) was compared with a state-of-the-art PET/computed tomography (PET/CT) system in nasopharyngeal cancer (NPC) patients. Methods and Materials: Twenty-four patients with non-NPC malignant tumors (control group) and 16 patients with NPC were subjected to FMISO-PET. The threshold of the tumor-to-muscle (T/M) ratio in each PET scan was calculated. The hypoxic volume within the gross tumor volume (GTVh) was determined using each PET ({sub NewPET}GTVh and {sub PET/CT}GTVh, respectively). Dose escalation IMRT plans prescribing 84 Gy to each GTVh were carried out. Results: The threshold of the T/M ratio was 1.35 for New PET and 1.23 for PET/CT. The mean volume of {sub NewPET}GTVh was significantly smaller than that of {sub PET/CT}GTVh (1.5 {+-} 1.6 cc vs 4.7 {+-} 4.6 cc, respectively; P=.0020). The dose escalation IMRT plans using New PET were superior in dose distribution to those using PET/CT. Dose escalation was possible in all 10 New PET-guided plans but not in 1 PET/CT-guided plan, because the threshold dose to the brainstem was exceeded. Conclusions: New PET was found to be useful for accurate dose escalation in FMISO-guided IMRT for patients with NPC.

  13. Metal-Insulator-Semiconductor Photodetectors

    PubMed Central

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

  14. The optical pumping of alkali atoms using coherent radiation from semi-conductor injection lasers and incoherent radiation from resonance lamps

    NASA Technical Reports Server (NTRS)

    Singh, G.

    1973-01-01

    An experimental study for creating population differences in the ground states of alkali atoms (Cesium 133) is presented. Studies made on GaAs-junction lasers and the achievement of population inversions among the hyperfine levels in the ground state of Cs 133 by optically pumping it with radiation from a GaAs diode laser. Laser output was used to monitor the populations in the ground state hyperfine levels as well as to perform the hyperfine pumping. A GaAs laser operated at about 77 K was used to scan the 8521 A line of Cs 133. Experiments were performed both with neon-filled and with paraflint-coated cells containing the cesium vapor. Investigations were also made for the development of the triple resonance coherent pulse technique and for the detection of microwave induced hyperfine trasistions by destroying the phase relationships produced by a radio frequency pulse. A pulsed cesium resonance lamp developed, and the lamp showed clean and reproducible switching characteristics.

  15. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray

    SciTech Connect

    Ruddy, Frank H.

    2005-06-01

    Work scheduled under year two of DOE Grant DE-FG02-04ER63734 is on schedule and all year-two milestones have or will be met. Results to date demonstrate that unprecedented silicon carbide (SiC) energy resolution has been obtained, and that SiC detectors may achieve energy resolution that exceeds that obtainable with the best silicon alpha spectrometers. Fast-neutron energy spectrometry measurements indicate that recoil-ion energy spectrometry should be possible with SiC detectors. Furthermore, SiC detectors have been demonstrated to perform well even after gamma-ray exposures of 1.E09 Rad. This result and the previously demonstrated capability of SiC detectors to operate in elevated-temperature environments are very promising for potential DOE EMSP applications. A new class of multipurpose, radiation-resistant semiconductor detectors that can be used in elevated-temperature and high-radiation environments is being developed under this grant. These detectors, based on silicon carbide (SiC) semiconductor are designed to have larger active volumes than previously available SiC detectors, and are being tested for their response to alpha particles, X-rays and low energy gamma rays, and fast neutrons. Specifically, SiC radiation detectors with larger areas and 100-micrometer thick active regions have been designed and manufactured according to detector-design specifications. Detectors based on a Schottky diode design were specified in order to minimize the effects of the detector entrance window on alpha particle measurements. During manufacture of the Schottky diodes, the manufacturer also provided a set of large-volume SiC p-i-n diodes for testing Extensive alpha particle measurements have been carried out to test and quantify the response of the SiC Schottky diodes. Exposures to 148-Gd, 213-Po, 217-At, 221-Fr, 225-Ac, 237-Np, 238-Pu, 240-Pu, and 242-Pu sources were used to obtain detailed alpha response data in the alpha energy range from 3182.787 keV to 8375.9 ke

  16. Reflection technique for thermal mapping of semiconductors

    DOEpatents

    Walter, Martin J.

    1989-06-20

    Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor.

  17. Semiconductor-based optical refrigerator

    DOEpatents

    Epstein, Richard I.; Edwards, Bradley C.; Sheik-Bahae, Mansoor

    2002-01-01

    Optical refrigerators using semiconductor material as a cooling medium, with layers of material in close proximity to the cooling medium that carries away heat from the cooling material and preventing radiation trapping. In addition to the use of semiconducting material, the invention can be used with ytterbium-doped glass optical refrigerators.

  18. Thermovoltaic semiconductor device including a plasma filter

    DOEpatents

    Baldasaro, Paul F.

    1999-01-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  19. Chest radiation - discharge

    MedlinePlus

    Radiation - chest - discharge; Cancer - chest radiation; Lymphoma - chest radiation ... When you have radiation treatment for cancer, your body goes through changes. About 2 weeks after your first treatment: It may be hard ...

  20. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2008-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) an affinity molecule linked to the semiconductor nanocrystal. The semiconductor nanocrystal is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Exposure of the semiconductor nanocrystal to excitation energy will excite the semiconductor nanocrystal causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  1. Oxide charge accumulation in metal oxide semiconductor devices during irradiation

    SciTech Connect

    Lee, D. ); Chan, C. )

    1991-05-15

    An analysis of a simple physical model for radiation induced oxide charge accumulation in the SiO{sub 2} layer of metal oxide semiconductor (MOS) structure has been developed. The model assumes that both electron and hole traps exist in the oxide layer. These traps can capture electrons as well as holes during irradiation. Using this model, final oxide charge distributions in the oxide layer of MOS capacitors exposed to a total dose radiation can be predicted. The resulting charge distribution is calculated to yield the midgap voltage shifts as functions of total dose, bias voltage, and oxide thickness. The results are shown to agree well with the experimental data. Furthermore, the model successfully analyzes the radiation-induced negative oxide charge distribution in an ion-implanted, radiation-hard MOS capacitor. These negative oxide charge distributions not only partially compensate the effects of trapped positive oxide charges but also reduced the density of positive oxide charges trapped near the Si/SiO{sub 2} interface. We found the reduction of the positive oxide charge density near the Si/SiO{sub 2} interface is due to internal electric field modification in the oxide layer.

  2. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

    SciTech Connect

    Dr. R. K. Pandey, Cudworth Endowed Professor Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666

    2008-11-24

    The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by

  3. High resolution scintillation detector with semiconductor readout

    DOEpatents

    Levin, Craig S.; Hoffman, Edward J.

    2000-01-01

    A novel high resolution scintillation detector array for use in radiation imaging such as high resolution Positron Emission Tomography (PET) which comprises one or more parallelepiped crystals with at least one long surface of each crystal being in intimate contact with a semiconductor photodetector such that photons generated within each crystal by gamma radiation passing therethrough is detected by the photodetector paired therewith.

  4. Electron beam pumped semiconductor laser

    NASA Technical Reports Server (NTRS)

    Hug, William F. (Inventor); Reid, Ray D. (Inventor)

    2009-01-01

    Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

  5. Cooling and mounting power semiconductors

    NASA Astrophysics Data System (ADS)

    Wetzel, P.

    1980-04-01

    The article examines the process of heat dissipation from power semiconductors. It is shown that for the relationship between temperature loading and dissipation it is possible to take an 'Ohm's law of heat abduction' to define the thermal impedance. The computation of the optimal size for a heatsink is demonstrated in detail. Discussion covers the types of heat dissipation such as heat radiation, heat conduction, and convection. Finally, some factors to consider during installation are examined.

  6. Quantitative analysis of incipient mineral loss in hard tissues

    NASA Astrophysics Data System (ADS)

    Matvienko, Anna; Mandelis, Andreas; Hellen, Adam; Jeon, Raymond; Abrams, Stephen; Amaechi, Bennett

    2009-02-01

    A coupled diffuse-photon-density-wave and thermal-wave theoretical model was developed to describe the biothermophotonic phenomena in multi-layered hard tissue structures. Photothermal Radiometry was applied as a safe, non-destructive, and highly sensitive tool for the detection of early tooth enamel demineralization to test the theory. Extracted human tooth was treated sequentially with an artificial demineralization gel to simulate controlled mineral loss in the enamel. The experimental setup included a semiconductor laser (659 nm, 120 mW) as the source of the photothermal signal. Modulated laser light generated infrared blackbody radiation from teeth upon absorption and nonradiative energy conversion. The infrared flux emitted by the treated region of the tooth surface and sub-surface was monitored with an infrared detector, both before and after treatment. Frequency scans with a laser beam size of 3 mm were performed in order to guarantee one-dimensionality of the photothermal field. TMR images showed clear differences between sound and demineralized enamel, however this technique is destructive. Dental radiographs did not indicate any changes. The photothermal signal showed clear change even after 1 min of gel treatment. As a result of the fittings, thermal and optical properties of sound and demineralized enamel were obtained, which allowed for quantitative differentiation of healthy and non-healthy regions. In conclusion, the developed model was shown to be a promising tool for non-invasive quantitative analysis of early demineralization of hard tissues.

  7. HERO resistant semiconductor bridge igniter

    NASA Astrophysics Data System (ADS)

    Bickes, R. W., Jr.; Greenway, D.; Grubelich, M. C.; Meyer, W. J.; Hartman, J. K.; McCampbell, C. B.

    1992-10-01

    The problem of accidental ignition of explosive components when exposed to radio frequency (RF) environments or radiation from other electromagnetic sources is commonly referred to as Hazards of Electromagnetic Radiation to Ordnance (HERO). One illustration of such a HERO problem is the MK 149 Phalanx ammunition, which is sensitive to RF energy over a broad range of frequencies. We have demonstrated that a potential solution to the Phalanx HERO problem consists of a semiconductor bridge (SCB) igniter that incorporates microcircuitry to protect the SCB from the RF environment. Direct RF injection and ground plane tests have demonstrated the resistance of our designs to severe RF environments.

  8. THE EFFECT OF CORONAL RADIATION ON A RESIDUAL INNER DISK IN THE LOW/HARD SPECTRAL STATE OF BLACK HOLE X-RAY BINARY SYSTEMS

    SciTech Connect

    Liu, B. F.; Taam, Ronald E. E-mail: r-taam@northwestern.edu

    2011-01-01

    Thermal conduction between a cool accretion disk and a hot inner corona can result in either evaporation of the disk or condensation of the hot corona. At low mass accretion rates, evaporation dominates and can completely remove the inner disk. At higher mass accretion rates, condensation becomes more efficient in the very inner regions, so that part of the mass accretes via a weak (initially formed) inner disk which is separated from the outer disk by a fully evaporated region at mid radii. At still higher mass accretion rates, condensation dominates everywhere, so there is a continuous cool disk extending to the innermost stable circular orbit. We extend these calculations by including the effect of irradiation by the hot corona on the disk structure. The flux which is not reflected is reprocessed in the disk, adding to the intrinsic thermal emission from gravitational energy release. This increases the seed photons for Compton cooling of the hot corona, enhancing condensation of the hot flow, and reinforcing the residual inner disk rather than evaporating it. Our calculations confirm that a residual inner disk can coexist with a hard, coronally dominated spectrum over the range of 0.006< m-dot <0.016 (for {alpha} = 0.2). This provides an explanation for the weak thermal component seen recently in the low/hard state of black hole X-ray binary systems.

  9. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    NASA Technical Reports Server (NTRS)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  10. Planarization of topography with spin-on carbon hard mask

    NASA Astrophysics Data System (ADS)

    Noya, Go; Hama, Yusuke; Ishii, Maki; Nakasugi, Shigemasa; Kudo, Takanori; Padmanaban, Munirathna

    2016-03-01

    Spin-on-carbon hard mask (SOC HM) has been used in semiconductor manufacturing since 45nm node as an alternative carbon hard mask process to chemical vapor deposition (CVD). As advancement of semiconductor to 2X nm nodes and beyond, multiple patterning technology is used and planarization of topography become more important and challenging ever before. In order to develop next generation SOC, one of focuses is planarization of topography. SOC with different concepts for improved planarization and the influence of thermal flow temperature, crosslink, film shrinkage, baking conditions on planarization and filling performance are described in this paper.

  11. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

    PubMed Central

    Sordo, Stefano Del; Abbene, Leonardo; Caroli, Ezio; Mancini, Anna Maria; Zappettini, Andrea; Ubertini, Pietro

    2009-01-01

    Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors. PMID:22412323

  12. The study of pinch regimes based on radiation-enhanced compression and anomalous resistivity phenomena and their effects on hard x-ray emission in a Mather type dense plasma focus device (SABALAN2)

    SciTech Connect

    Piriaei, D.; Javadi, S.; Ghoranneviss, M.; Mahabadi, T. D.; Saw, S. H.; Lee, S.

    2015-12-15

    In this study, by using argon and nitrogen as the filling gases in a Mather type dense plasma focus device at different values of pressure and charging voltage, two different kinds of pinch regimes were observed for each of the gases. The physics of the pinch regimes could be explained by using the two versions of the Lee's computational model which predicted each of the scenarios and clarified their differences between the two gases according to the radiation-enhanced compression and, additionally, predicted the pinch regimes through the anomalous resistivity effect during the pinch time. This was accomplished through the fitting process (simulation) on the current signal. Moreover, the characteristic amplitude and time scales of the anomalous resistances were obtained. The correlations between the features of the plasma current dip and the emitted hard x-ray pulses were observed. The starting time, intensity, duration, and the multiple or single feature of the emitted hard x-ray strongly correlated to the same respective features of the current dip.

  13. A comparative study of the radiation hardness of plastic scintillators for the upgrade of the Tile Calorimeter of the ATLAS detector

    NASA Astrophysics Data System (ADS)

    Liao, S.; Erasmus, R.; Jivan, H.; Pelwan, C.; Peters, G.; Sideras-Haddad, E.

    2015-10-01

    The influence of radiation on the light transmittance of plastic scintillators was studied experimentally. The high optical transmittance property of plastic scintillators makes them essential in the effective functioning of the Tile calorimeter of the ATLAS detector at CERN. This significant role played by the scintillators makes this research imperative in the movement towards the upgrade of the tile calorimeter. The radiation damage of polyvinyl toluene (PVT) based plastic scintillators was studied, namely, EJ-200, EJ-208 and EJ-260, all manufactured and provided to us by ELJEN technology. In addition, in order to compare to scintillator brands actually in use at the ATLAS detector currently, two polystyrene (PS) based scintillators and an additional PVT based scintillator were also scrutinized in this study, namely, Dubna, Protvino and Bicron, respectively. All the samples were irradiated using a 6 MeV proton beam at different doses at iThemba LABS Gauteng. The radiation process was planned and mimicked by doing simulations using a SRIM program. In addition, transmission spectra for the irradiated and unirradiated samples of each grade were obtained, observed and analyzed.

  14. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2005-08-09

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  15. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2002-01-01

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in he probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  16. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2004-03-02

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. Subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe, causing the emission of electromagnetic radiation. Further described are processes for respectively: making the semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  17. Organo luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    2006-09-05

    A semiconductor nanocrystal compound is described capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The compound is linked to an affinity molecule to form a semiconductor nanocrystal probe capable of bonding with a detectable substance. subsequent exposure to excitation energy will excite the semiconductor nanocrystal in the probe causing the emission of electromagnetic radiation. Further described are processes for respectively: making the luminescent semiconductor nanocrystal compound; making the semiconductor nanocrystal probe; and using the probe to determine the presence of a detectable substance in a material.

  18. High throughput combinatorial screening of semiconductor materials

    NASA Astrophysics Data System (ADS)

    Mao, Samuel S.

    2011-11-01

    This article provides an overview of an advanced combinatorial material discovery platform developed recently for screening semiconductor materials with properties that may have applications ranging from radiation detectors to solar cells. Semiconductor thin-film libraries, each consisting of 256 materials of different composition arranged into a 16×16 matrix, were fabricated using laser-assisted evaporation process along with a combinatorial mechanism to achieve variations. The composition and microstructure of individual materials on each thin-film library were characterized with an integrated scanning micro-beam x-ray fluorescence and diffraction system, while the band gaps were determined by scanning optical reflection and transmission of the libraries. An ultrafast ultraviolet photon-induced charge probe was devised to measure the mobility and lifetime of individual thin-film materials on semiconductor libraries. Selected results on the discovery of semiconductors with desired band gaps and transport properties are illustrated.

  19. Review of using gallium nitride for ionizing radiation detection

    SciTech Connect

    Wang, Jinghui; Mulligan, Padhraic; Cao, Lei R.; Brillson, Leonard

    2015-09-15

    With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

  20. Unitary lens semiconductor device

    DOEpatents

    Lear, K.L.

    1997-05-27

    A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

  1. Unitary lens semiconductor device

    DOEpatents

    Lear, Kevin L.

    1997-01-01

    A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

  2. Radiation

    NASA Video Gallery

    Outside the protective cocoon of Earth's atmosphere, the universe is full of harmful radiation. Astronauts who live and work in space are exposed not only to ultraviolet rays but also to space radi...

  3. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

    PubMed Central

    Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

    2013-01-01

    Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

  4. Voyager electronic parts radiation program, volume 1

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Martin, K. E.; Price, W. E.

    1977-01-01

    The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.

  5. Rad-Hard/HI-REL FPGA

    NASA Technical Reports Server (NTRS)

    Wang, Jih-Jong; Cronquist, Brian E.; McGowan, John E.; Katz, Richard B.

    1997-01-01

    The goals for a radiation hardened (RAD-HARD) and high reliability (HI-REL) field programmable gate array (FPGA) are described. The first qualified manufacturer list (QML) radiation hardened RH1280 and RH1020 were developed. The total radiation dose and single event effects observed on the antifuse FPGA RH1280 are reported on. Tradeoffs and the limitations in the single event upset hardening are discussed.

  6. Production of 35S for a Liquid Semiconductor Betavoltaic

    SciTech Connect

    Meier, David E.; Garnov, A. Y.; Robertson, J. D.; Kwon, J. W.; Wacharasindhu, T.

    2009-10-01

    The specific energy density from radioactive decay is five to six orders of magnitude greater than the specific energy density in conventional chemical battery and fuel cell technologies. We are currently investigating the use of liquid semiconductor based betavoltaics as a way to directly convert the energy of radioactive decay into electrical power and potentially avoid the radiation damage that occurs in solid state semiconductor devices due to non-ionizing energy loss. Sulfur-35 was selected as the isotope for the liquid semiconductor demonstrations because it can be produced in high specific activity and it is chemically compatible with known liquid semiconductor media.

  7. Semiconductor laser gyro with optical frequency dithering

    SciTech Connect

    Prokof'eva, L P; Sakharov, V K; Shcherbakov, V V

    2014-04-28

    The semiconductor laser gyro is described, in which the optical frequency dithering implemented by intracavity phase modulation suppresses the frequency lock-in and provides the interference of multimode radiation. The sensitivity of the device amounted to 10–20 deg h{sup -1}. (laser gyroscopes)

  8. Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

    SciTech Connect

    Sambuco Salomone, L. Kasulin, A.; Carbonetto, S. H.; Garcia-Inza, M. A.; Redin, E. G.; Berbeglia, F.; Lipovetzky, J.; Faigón, A.; Campabadal, F.

    2014-11-07

    Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.

  9. Breakdown of QCD factorization in hard diffraction

    NASA Astrophysics Data System (ADS)

    Kopeliovich, B. Z.

    2016-07-01

    Factorization of short- and long-distance interactions is severely broken in hard diffractive hadronic collisions. Interaction with the spectator partons leads to an interplay between soft and hard scales, which results in a leading twist behavior of the cross section, on the contrary to the higher twist predicted by factorization. This feature is explicitly demonstrated for diffractive radiation of abelian (Drell-Yan, gauge bosons, Higgs) and non-abelian (heavy flavors) particles.

  10. Production of CMS FPIX detector modules and development of novel radiation-hard silicon sensors for future upgrades of the LHC

    NASA Astrophysics Data System (ADS)

    Koybasi, Ozhan

    The Compact Muon Solenoid (CMS) experiment currently taking data at the Large Hadron Collider (LHC) has the largest ever built all-silicon tracking system with a pixel detector as the innermost component. The pixel detector consists of three 53 cm long barrel layers (BPIX) at radial distances of r= 4.4, 7.3, and 10.2 cm from the interaction point complemented with two end-cap disks (FPIX) on each side of the interaction region covering radial distances from ˜6 cm to 15 cm. The development, production, and qualification of the silicon detector modules used for the construction of the CMS FPIX disks are described. The plan for the luminosity upgrade of the LHC foresees a phase I upgrade increasing the peak luminosity from 1034 cm.2s.1 (original design figure) to 2-3 x 1034 cm-2s-1 after about 5 years of operation, followed by phase II upgrade eventually reaching a value of 5x1034 cm-2 s-1 (the so-called "High Luminosity-LHC" or "HL-LHC"). At Phase I, the CMS pixel detector will be replaced by a new detector, which will have an additional fourth barrel layer at r=16 cm and two extra forward disks on each side with radial coverage of all disks increased to r =4.5-16.1 cm. Although the present non- n silicon pixel sensor technology meets the performance requirements, it is possible to achieve the same performance with the relatively new n-on-p technology, which would reduce the cost by ˜50%. The phase II upgrade, on the other hand, faces a challenge for the detector technology to be adopted for the innermost tracking layers (at r ˜ 4 cm) where the radiation fluence is expected to reach values close to 1016 neq /cm2, since the conventional planar silicon sensors are functional only up to a fluence of ˜1015 neq/cm2. The 3D silicon sensor technology is regarded as one of the most promising solutions for the radiation tolerance requirements of innermost pixel tracking layers at the HL-LHC. Improvements to the current n-on-n silicon pixel sensor design; and development

  11. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Zygmunt (Inventor); Kressel, Henry (Inventor)

    1977-01-01

    A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

  12. Impact of Scaled Technology on Radiation Testing and Hardening

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2005-01-01

    This presentation gives a brief overview of some of the radiation challenges facing emerging scaled digital technologies with implications on using consumer grade electronics and next generation hardening schemes. Commercial semiconductor manufacturers are recognizing some of these issues as issues for terrestrial performance. Looking at means of dealing with soft errors. The thinned oxide has indicated improved TID tolerance of commercial products hardened by "serendipity" which does not guarantee hardness or say if the trend will continue. This presentation also focuses one reliability implications of thinned oxides.

  13. Weak solar flares with a detectable flux of hard X rays: Specific features of microwave radiation in the corresponding active regions

    NASA Astrophysics Data System (ADS)

    Grigor'eva, I. Yu.; Livshits, M. A.

    2014-12-01

    The emission of very weak flares was registered at the Suzaku X-ray observatory in 2005-2009. The photon power spectrum in the 50-110 keV range for a number of these phenomena shows that some electrons accelerate to energies higher than 100 keV. The corresponding flares originate in active regions (ARs) with pronounced sunspots. As in the case of AR 10933 in January 2007 analyzed by us previously (Grigor'eva et al., 2013), the thoroughly studied weak flares in May 2007 are related to the emergence of a new magnetic field in the AR and to the currents that originate in this case. A comparison of the Suzaku data with the RATAN-600 microwave observations indicates that a new polarized source of microwave radiation develops in the AR (or the previously existing source intensifies) one-two days before a weak flare in the emerging flux regions. Arguments in favor of recent views that fields are force-free in the AR corona are put forward. The development of weak flares is related to the fact that the free energy of the currents that flow above the field neutral line at altitudes reaching several thousand kilometers is accumulated and subsequently released.

  14. Radiation hardness tests and characterization of the CLARO-CMOS, a low power and fast single-photon counting ASIC in 0.35 micron CMOS technology

    NASA Astrophysics Data System (ADS)

    Fiorini, M.; Andreotti, M.; Baldini, W.; Calabrese, R.; Carniti, P.; Cassina, L.; Cotta Ramusino, A.; Giachero, A.; Gotti, C.; Luppi, E.; Maino, M.; Malaguti, R.; Pessina, G.; Tomassetti, L.

    2014-12-01

    The CLARO-CMOS is a prototype ASIC that allows fast photon counting with 5 ns peaking time, a recovery time to baseline smaller than 25 ns, and a power consumption of less than 1 mW per channel. This chip is capable of single-photon counting with multi-anode photomultipliers and finds applications also in the read-out of silicon photomultipliers and microchannel plates. The prototype is realized in AMS 0.35 micron CMOS technology. In the LHCb RICH environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade in Long Shutdown 2 (LS2), the ASIC must withstand a total fluence of about 6×1012 1 MeV neq /cm2 and a total ionizing dose of 400 krad. A systematic evaluation of the radiation effects on the CLARO-CMOS performance is therefore crucial to ensure long term stability of the electronics front-end. The results of multi-step irradiation tests with neutrons and X-rays up to the fluence of 1014 cm-2 and a dose of 4 Mrad, respectively, are presented, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step.

  15. Impurity gettering in semiconductors

    DOEpatents

    Sopori, B.L.

    1995-06-20

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.

  16. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    DOE PAGES

    Vittone, Ettore; Pastuovic, Zeljko; Breese, Mark B. H.; Lopez, Javier Garicia; Jaksic, Milko; Raisanen, Jyrki; Siegele, Rainer; Simon, Aliz; Vizkelethy, Gyorgy

    2016-02-08

    This study investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and themore » charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.« less

  17. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

    NASA Astrophysics Data System (ADS)

    Vittone, E.; Pastuovic, Z.; Breese, M. B. H.; Garcia Lopez, J.; Jaksic, M.; Raisanen, J.; Siegele, R.; Simon, A.; Vizkelethy, G.

    2016-04-01

    This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

  18. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, Jr., Robert W.; Grubelich, Mark C.

    1999-01-01

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length.

  19. Semiconductor bridge (SCB) detonator

    DOEpatents

    Bickes, R.W. Jr.; Grubelich, M.C.

    1999-01-19

    The present invention is a low-energy detonator for high-density secondary-explosive materials initiated by a semiconductor bridge (SCB) igniter that comprises a pair of electrically conductive lands connected by a semiconductor bridge. The semiconductor bridge is in operational or direct contact with the explosive material, whereby current flowing through the semiconductor bridge causes initiation of the explosive material. Header wires connected to the electrically-conductive lands and electrical feed-throughs of the header posts of explosive devices, are substantially coaxial to the direction of current flow through the SCB, i.e., substantially coaxial to the SCB length. 3 figs.

  20. Interconnected semiconductor devices

    DOEpatents

    Grimmer, Derrick P.; Paulson, Kenneth R.; Gilbert, James R.

    1990-10-23

    Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.

  1. New BNL 3D-Trench Electrode Si Detectors for Radiation Hard Detectors for sLHC and for X-ray Applications

    SciTech Connect

    Li Z.

    2011-05-11

    A new international-patent-pending (PCT/US2010/52887) detector type, named here as 3D-Trench electrode Si detectors, is proposed in this work. In this new 3D electrode configuration, one or both types of electrodes are etched as trenches deep into the Si (fully penetrating with SOI or supporting wafer, or non-fully penetrating into 50-90% of the thickness), instead of columns as in the conventional ('standard') 3D electrode Si detectors. With trench etched electrodes, the electric field in the new 3D electrode detectors are well defined without low or zero field regions. Except near both surfaces of the detector, the electric field in the concentric type 3D-Trench electrode Si detectors is nearly radial with little or no angular dependence in the circular and hexangular (concentric-type) pixel cell geometries. In the case of parallel plate 3D trench pixels, the field is nearly linear (like the planar 2D electrode detectors), with simple and well-defined boundary conditions. Since each pixel cell in a 3D-Trench electrode detector is isolated from others by highly doped trenches, it is an electrically independent cell. Therefore, an alternative name 'Independent Coaxial Detector Array', or ICDA, is assigned to an array of 3D-Trench electrode detectors. The electric field in the detector can be reduced by a factor of nearly 10 with an optimal 3D-Trench configuration where the junction is on the surrounding trench side. The full depletion voltage in this optimal configuration can be up to 7 times less than that of a conventional 3D detector, and even a factor of two less than that of a 2D planar detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detector. In the case of non-fully penetrating trench electrodes, the processing is true one-sided with backside being unprocessed. The charge loss due to the dead space associated with the trenches is insignificant as compared to that due to radiation-induced trapping in sLHC environment

  2. New BNL 3D-Trench electrode Si detectors for radiation hard detectors for sLHC and for X-ray applications

    NASA Astrophysics Data System (ADS)

    Li, Zheng

    2011-12-01

    A new international-patent-pending (PCT/US2010/52887) detector type, named here as 3D-Trench electrode Si detectors, is proposed in this work. In this new 3D electrode configuration, one or both types of electrodes are etched as trenches deep into the Si (fully penetrating with SOI or supporting wafer, or non-fully penetrating into 50-90% of the thickness), instead of columns as in the conventional ("standard") 3D electrode Si detectors. With trench etched electrodes, the electric field in the new 3D electrode detectors are well defined without low or zero field regions. Except near both surfaces of the detector, the electric field in the concentric type 3D-Trench electrode Si detectors is nearly radial with little or no angular dependence in the circular and hexangular (concentric-type) pixel cell geometries. In the case of parallel plate 3D trench pixels, the field is nearly linear (like the planar 2D electrode detectors), with simple and well-defined boundary conditions. Since each pixel cell in a 3D-Trench electrode detector is isolated from others by highly doped trenches, it is an electrically independent cell. Therefore, an alternative name "Independent Coaxial Detector Array", or ICDA, is assigned to an array of 3D-Trench electrode detectors. The electric field in the detector can be reduced by a factor of nearly 10 with an optimal 3D-Trench configuration where the junction is on the surrounding trench side. The full depletion voltage in this optimal configuration can be up to 7 times less than that of a conventional 3D detector, and even a factor of two less than that of a 2D planar detector with a thickness the same as the electrode spacing in the 3D-Trench electrode detector. In the case of non-fully penetrating trench electrodes, the processing is true one-sided with backside being unprocessed. The charge loss due to the dead space associated with the trenches is insignificant as compared to that due to radiation-induced trapping in sLHC environment

  3. Semiconductor detectors with proximity signal readout

    SciTech Connect

    Asztalos, Stephen J.

    2014-01-30

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need.

  4. A thermovoltaic semiconductor device including a plasma filter

    SciTech Connect

    Baldasaro, Paul F.

    1997-12-01

    A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential are disclosed. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.

  5. Hardness variability in commercial and hardened technologies

    SciTech Connect

    Shaneyfelt, M.R.; Winokur, P.S.; Meisenheimer, T.L.; Sexton, F.W.; Roeske, S.B.; Knoll, M.G.

    1994-03-01

    Over the past 10 years, there have been a number of advances in methods to assess and assure the radiation hardness of microelectronics in military and space applications. At the forefront of these is the Qualified Manufacturers List (QML) methodology, in which the hardness of product is ``built-in`` through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to varying radiation scenarios. At the same time, there has been renewed interest in the use of commercial technology -- with its enhanced performance, reduced cost, and higher reliability -- in military and space systems. In this paper, we initially demonstrate the application of QML techniques to assure and control the radiation response of hardened technologies. Through several examples, we demonstrate intra-die, wafer-to-wafer, and lot-to-lot variations in a hardened technology. We observe 10 to 30% variations in key technology parameters that result from variability in geometry, process, and design layout. Radiation-induced degradation is seen to mirror preirradiation characteristics. We then evaluate commercial technologies and report considerably higher variability in radiation hardness, i.e., variations by a factor of two to five. This variability is shown to arise from a lack of control of technology parameters relevant to the radiation response, which a commercial manufacturer has no interest in controlling in a normal process flow.

  6. Hardness variability in commercial and hardened technologies

    NASA Astrophysics Data System (ADS)

    Shaneyfelt, M. R.; Winokur, P. S.; Meisenheimer, T. L.; Sexton, F. W.; Roeske, S. B.; Knoll, M. G.

    1994-01-01

    Over the past 10 years, there have been a number of advances in methods to assess and assure the radiation hardness of microelectronics in military and space applications. At the forefront of these is the Qualified Manufacturers List (QML) methodology, in which the hardness of product is 'built-in' through statistical process control (SPC) of technology parameters relevant to the radiation response, test structure to integrated circuit (IC) correlations, and techniques for extrapolating laboratory test results to varying radiation scenarios. At the same time, there has been renewed interest in the use of commercial technology -- with its enhanced performance, reduced cost, and higher reliability -- in military and space systems. In this paper, we initially demonstrate the application of QML techniques to assure and control the radiation response of hardened technologies. Through several examples, we demonstrate intra-die, wafer-to-wafer, and lot-to-lot variations in a hardened technology. We observe 10 to 30% variations in key technology parameters that result from variability in geometry, process, and design layout. Radiation-induced degradation is seen to mirror preirradiation characteristics. We then evaluate commercial technologies and report considerably higher variability in radiation hardness, i.e., variations by a factor of two to five. This variability is shown to arise from a lack of control of technology parameters relevant to the radiation response, which a commercial manufacturer has no interest in controlling in a normal process flow.

  7. Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors

    NASA Astrophysics Data System (ADS)

    Peng, Chao; Zhang, Zheng-Xuan; Hu, Zhi-Yuan; Huang, Hui-Xiang; Ning, Bing-Xu; Bi, Da-Wei

    2013-09-01

    The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60Co γ-ray irradiation. Radiation enhanced drain-induced barrier lowering (DIBL) under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide, and it is experimentally observed for short channel transistors. The enhanced DIBL effect manifests as the DIBL parameter increases with total dose. Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor. The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect, but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.

  8. Synthesis of semiconductor nanoparticles.

    PubMed

    Chen, Xianfeng; Dobson, Peter J

    2012-01-01

    Here, we describe typical methods and provide detailed experimental protocols for synthesizing and processing various semiconductor nanoparticles which have potential application in biology and medicine. These include synthesis of binary semiconductor nanoparticles; core@shell nanoparticles and alloyed nanoparticles; size-selective precipitation to obtain monodisperse nanoparticles; and strategies for phase transfer of nanoparticles from organic solution to aqueous media. PMID:22791427

  9. The eCDR, a Radiation-Hard 40/80/160/320 Mbit/s CDR with internal VCO frequency calibration and 195 ps programmable phase resolution in 130 nm CMOS

    NASA Astrophysics Data System (ADS)

    Tavernier, F.; Francisco, R.; Bonacini, S.; Poltorak, K.; Moreira, P.

    2013-12-01

    A clock and data recovery IP, the eCDR, is presented which is intended to be implemented on the detector front-end ASICs that need to communicate with the GBTX by means of e-links. The programmable CDR accepts data at 40, 80, 160 or 320Mbit/s and generates retimed data as well as 40, 80, 160 and 320MHz clocks that are aligned to the retimed data. Moreover, all the outputs have a programmable phase with a resolution of 195ps. An internal calibration mechanism enables the eCDR to lock on incoming data even without the availability of any form of reference clock. The radiation-hard design, integrated in a 130nm CMOS technology, operates at a supply voltage between 1.2V and 1.5V. The power consumption is between 28.5mW and 34.5mW, depending on the settings. The eCDR can achieve a very low RMS jitter below 10ps.

  10. Solid state radiative heat pump

    DOEpatents

    Berdahl, Paul H.

    1986-01-01

    A solid state radiative heat pump (10, 50, 70) operable at room temperature (300.degree. K.) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of charge carriers as compared to thermal equilibrium. In one form of the invention (10, 70) an infrared semiconductor photodiode (21, 71) is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention (50), a homogeneous semiconductor (51) is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation through the active surface of the semiconductor are disclosed. In one method, an anti-reflection layer (19) is coated into the active surface (13) of the semiconductor (11), the anti-reflection layer (19) having an index of refraction equal to the square root of that of the semiconductor (11). In the second method, a passive layer (75) is spaced from the active surface (73) of the semiconductor (71) by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler (91) with a paraboloid reflecting surface (92) is in contact with the active surface (13, 53) of the semiconductor (11, 51), the coupler having an index of refraction about the same as that of the semiconductor.

  11. Solid state radiative heat pump

    DOEpatents

    Berdahl, P.H.

    1984-09-28

    A solid state radiative heat pump operable at room temperature (300 K) utilizes a semiconductor having a gap energy in the range of 0.03-0.25 eV and operated reversibly to produce an excess or deficit of change carriers as compared equilibrium. In one form of the invention an infrared semiconductor photodiode is used, with forward or reverse bias, to emit an excess or deficit of infrared radiation. In another form of the invention, a homogenous semiconductor is subjected to orthogonal magnetic and electric fields to emit an excess or deficit of infrared radiation. Three methods of enhancing transmission of radiation the active surface of the semiconductor are disclosed. In one method, an anti-refection layer is coated into the active surface of the semiconductor, the anti-reflection layer having an index of refraction equal to the square root of that of the semiconductor. In the second method, a passive layer is speaced trom the active surface of the semiconductor by a submicron vacuum gap, the passive layer having an index of refractive equal to that of the semiconductor. In the third method, a coupler with a paraboloid reflecting surface surface is in contact with the active surface of the semiconductor, the coupler having an index of refraction about the same as that of the semiconductor.

  12. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen Edward; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2008-07-29

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  13. Codoped direct-gap semiconductor scintillators

    DOEpatents

    Derenzo, Stephen E.; Bourret-Courchesne, Edith; Weber, Marvin J.; Klintenberg, Mattias K.

    2006-05-23

    Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

  14. Hydrogen Sensors Using Nitride-Based Semiconductor Diodes: The Role of Metal/Semiconductor Interfaces

    PubMed Central

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  15. Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces.

    PubMed

    Irokawa, Yoshihiro

    2011-01-01

    In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C-V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C-V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C-V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I-V) characterization, suggesting that low-frequency C-V method would be effective in detecting very low hydrogen concentrations. PMID:22346597

  16. Session: Hard Rock Penetration

    SciTech Connect

    Tennyson, George P. Jr.; Dunn, James C.; Drumheller, Douglas S.; Glowka, David A.; Lysne, Peter

    1992-01-01

    This session at the Geothermal Energy Program Review X: Geothermal Energy and the Utility Market consisted of five presentations: ''Hard Rock Penetration - Summary'' by George P. Tennyson, Jr.; ''Overview - Hard Rock Penetration'' by James C. Dunn; ''An Overview of Acoustic Telemetry'' by Douglas S. Drumheller; ''Lost Circulation Technology Development Status'' by David A. Glowka; ''Downhole Memory-Logging Tools'' by Peter Lysne.

  17. Hardness Tester for Polyur

    NASA Technical Reports Server (NTRS)

    Hauser, D. L.; Buras, D. F.; Corbin, J. M.

    1987-01-01

    Rubber-hardness tester modified for use on rigid polyurethane foam. Provides objective basis for evaluation of improvements in foam manufacturing and inspection. Typical acceptance criterion requires minimum hardness reading of 80 on modified tester. With adequate correlation tests, modified tester used to measure indirectly tensile and compressive strengths of foam.

  18. Semiconductor active plasmonics

    NASA Astrophysics Data System (ADS)

    Mendach, Stefan; Nötzel, Richard

    2013-12-01

    Plasmonics is a research area in nanophotonics attracting increasing interest due to the potential applications in sensing and detecting, sub-wavelength confinement of light, integrated circuits, and many others. In particular, when plasmonic structures such as metal nanostructures or highly doped semiconductor particles are combined with active semiconductor materials and nanostructures, novel exciting physics and applications arise. This special section on semiconductor active plasmonics covers several of the most important and complementary directions in the field. First is the modification of the optical properties of a semiconductor nanostructure due to the close proximity of a metallic film or nanostructure. These arise from the formation hybrid plasmon/exciton states and may lead to enhanced spontaneous emission rates, directional far field emission patterns, strong coupling phenomena, and many more. Second is the realization of sub-wavelength scale nanolasers by coupling a semiconductor gain medium with a plasmonic metallic cavity. Particular emphasis is given on the major technical challenges in the fabrication of these nanolasers, such as device patterning, surface passivation, and metal deposition. While the above topics address mainly active structures and devices operating in the visible or near-infrared wavelength region, in the third, the enhanced THz extinction by periodic arrays of semiconductor particles is discussed. This is based on the build-up of surface plasmon resonances in the doped semiconductor particles which can be resonantly coupled and widely tuned by the carrier density in the semiconductor. We believe these highly diverse aspects give insight into the wide variety of new physics and applications that semiconductor active plasmonics is offering. Finally, we would like to thank the IOP editorial staff, in particular Alice Malhador, for their support, and we would also like to thank the contributors for their efforts and participation

  19. The hard metal diseases

    SciTech Connect

    Cugell, D.W. )

    1992-06-01

    Hard metal is a mixture of tungsten carbide and cobalt, to which small amounts of other metals may be added. It is widely used for industrial purposes whenever extreme hardness and high temperature resistance are needed, such as for cutting tools, oil well drilling bits, and jet engine exhaust ports. Cobalt is the component of hard metal that can be a health hazard. Respiratory diseases occur in workers exposed to cobalt--either in the production of hard metal, from machining hard metal parts, or from other sources. Adverse pulmonary reactions include asthma, hypersensitivity pneumonitis, and interstitial fibrosis. A peculiar, almost unique form of lung fibrosis, giant cell interstitial pneumonia, is closely linked with cobalt exposure.66 references.

  20. The hard metal diseases.

    PubMed

    Cugell, D W

    1992-06-01

    Hard metal is a mixture of tungsten carbide and cobalt, to which small amounts of other metals may be added. It is widely used for industrial purposes whenever extreme hardness and high temperature resistance are needed, such as for cutting tools, oil well drilling bits, and jet engine exhaust ports. Cobalt is the component of hard metal that can be a health hazard. Respiratory diseases occur in workers exposed to cobalt--either in the production of hard metal, from machining hard metal parts, or from other sources. Adverse pulmonary reactions include asthma, hypersensitivity pneumonitis, and interstitial fibrosis. A peculiar, almost unique form of lung fibrosis, giant cell interstitial pneumonia, is closely linked with cobalt exposure.

  1. The hard metal diseases.

    PubMed

    Cugell, D W

    1992-06-01

    Hard metal is a mixture of tungsten carbide and cobalt, to which small amounts of other metals may be added. It is widely used for industrial purposes whenever extreme hardness and high temperature resistance are needed, such as for cutting tools, oil well drilling bits, and jet engine exhaust ports. Cobalt is the component of hard metal that can be a health hazard. Respiratory diseases occur in workers exposed to cobalt--either in the production of hard metal, from machining hard metal parts, or from other sources. Adverse pulmonary reactions include asthma, hypersensitivity pneumonitis, and interstitial fibrosis. A peculiar, almost unique form of lung fibrosis, giant cell interstitial pneumonia, is closely linked with cobalt exposure. PMID:1511554

  2. Light sources based on semiconductor current filaments

    DOEpatents

    Zutavern, Fred J.; Loubriel, Guillermo M.; Buttram, Malcolm T.; Mar, Alan; Helgeson, Wesley D.; O'Malley, Martin W.; Hjalmarson, Harold P.; Baca, Albert G.; Chow, Weng W.; Vawter, G. Allen

    2003-01-01

    The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

  3. Introduction to Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  4. Cell imaging using GaInAsP semiconductor photoluminescence.

    PubMed

    Sakemoto, Mai; Kishi, Yoji; Watanabe, Keisuke; Abe, Hiroshi; Ota, Satoshi; Takemura, Yasushi; Baba, Toshihiko

    2016-05-16

    We demonstrate label-free imaging of living cells using a GaInAsP semiconductor imaging plate. The photoluminescence (PL) intensity is changed by immersing the semiconductor wafer in different pH solutions and by depositing charged polyelectrolytes on the wafer. Various observations indicate that this phenomenon arises from the radiative and surface recombination rates modified by the Schottky barrier at the charged semiconductor surface. HeLa cancer cells were cultured on the semiconductor, and PL was observed using a near-infrared camera. The semiconductor areas with the cells attached exhibited characteristic PL profiles, which might reflect the attachment and surface condition of the cells, cellular matrix, and other substances. PMID:27409944

  5. Statistical Modeling for Radiation Hardness Assurance

    NASA Technical Reports Server (NTRS)

    Ladbury, Raymond L.

    2014-01-01

    We cover the models and statistics associated with single event effects (and total ionizing dose), why we need them, and how to use them: What models are used, what errors exist in real test data, and what the model allows us to say about the DUT will be discussed. In addition, how to use other sources of data such as historical, heritage, and similar part and how to apply experience, physics, and expert opinion to the analysis will be covered. Also included will be concepts of Bayesian statistics, data fitting, and bounding rates.

  6. Isotopically controlled semiconductors

    SciTech Connect

    Haller, E.E.

    2004-11-15

    A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.

  7. SLM based semiconductor maskwriter

    NASA Astrophysics Data System (ADS)

    Diez, Steffen; Jehle, Achim

    2015-09-01

    The high-end semiconductor mask fabrication is dominated by e-beam technology. But still more than 50% of all semiconductor masks are produced by laser writers. The current laser writers are based on the same technology that was used 25 years ago. They are reliable and fast but not very economical. Heidelberg Instruments has developed a new economical and fast laser writer based on the latest technologies.

  8. Strained-bond semiconductors

    NASA Astrophysics Data System (ADS)

    Dow, John D.

    1994-05-01

    Theories of strained-bond semiconductors and superconductors have been developed that promise to have significant impact on future electronic devices of interest to the Air Force. These include: (1) development of a theory of high-temperature superconductivity based on the idea of strained-layer superlattices, (2) elucidation of the physics of doping in Type-2 semiconductor superlattices, which is now central to the development of high-speed field-effect transistors, (3) a theory of dimerization and reconstruction on (001) semiconductor surfaces, (4) theory of Mobius transforms as applied to physics and remote sensing, (5) new understanding of how defects affect the vibrational properties of semiconductors, (6) new methods of efficiently computing the trajectories of atoms in semiconductors by a priori molecular dynamics, (7) elucidation of the criteria affecting quantum-well luminescence from Si, (8) models of the effects of vacancies in large-gap Al(x)Ga(1-x)N alloys, (9) physics of rare-earth-doped silicon, (10) models of Co adsorption to silicon surfaces, (11) theories of how defects affect the properties of large band-gap superlattices, and (12) models of the effects of electronic structure on the properties of semiconductors.

  9. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, B.L.

    1995-07-04

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

  10. Fabrication of optically reflecting ohmic contacts for semiconductor devices

    DOEpatents

    Sopori, Bhushan L.

    1995-01-01

    A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

  11. All-semiconductor negative-index plasmonic absorbers.

    PubMed

    Law, S; Roberts, C; Kilpatrick, T; Yu, L; Ribaudo, T; Shaner, E A; Podolskiy, V; Wasserman, D

    2014-01-10

    We demonstrate epitaxially grown all-semiconductor thin-film midinfrared plasmonic absorbers and show that absorption in these structures is linked to the excitation of highly confined negative-index surface plasmon polaritons. Strong (>98%) absorption is experimentally observed, and the spectral position and intensity of the absorption resonances are studied by reflection and transmission spectroscopy. Numerical models as well as an analytical description of the excited guided modes in our structures are presented, showing agreement with experiment. The structures investigated demonstrate a wavelength-flexible, all-semiconductor, plasmonic architecture with potential for both sensing applications and enhanced interaction of midinfrared radiation with integrated semiconductor optoelectronic elements. PMID:24483930

  12. Organizing Your Hard Disk.

    ERIC Educational Resources Information Center

    Stocker, H. Robert; Hilton, Thomas S. E.

    1991-01-01

    Suggests strategies that make hard disk organization easy and efficient, such as making, changing, and removing directories; grouping files by subject; naming files effectively; backing up efficiently; and using PATH. (JOW)

  13. Chemistry of MOS-LSI radiation hardening

    NASA Technical Reports Server (NTRS)

    Grunthaner, P.

    1985-01-01

    The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

  14. Molecular Chemistry to the Fore: New Insights into the Fascinating World of Photoactive Colloidal Semiconductor Nanocrystals

    SciTech Connect

    Vela-Becerra, Javier

    2013-02-01

    Colloidal semiconductor nanocrystals possess unique properties that are unmatched by other chromophores such as organic dyes or transition-metal complexes. These versatile building blocks have generated much scientific interest and found applications in bioimaging, tracking, lighting, lasing, photovoltaics, photocatalysis, thermoelectrics, and spintronics. Despite these advances, important challenges remain, notably how to produce semiconductor nanostructures with predetermined architecture, how to produce metastable semiconductor nanostructures that are hard to isolate by conventional syntheses, and how to control the degree of surface loading or valence per nanocrystal. Molecular chemists are very familiar with these issues and can use their expertise to help solve these challenges. In this Perspective, we present our group’s recent work on bottom-up molecular control of nanoscale composition and morphology, low-temperature photochemical routes to semiconductor heterostructures and metastable phases, solar-to-chemical energy conversion with semiconductor-based photocatalysts, and controlled surface modification of colloidal semiconductors that bypasses ligand exchange.

  15. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  16. Silicon metal-semiconductor-metal photodetector

    DOEpatents

    Brueck, Steven R. J.; Myers, David R.; Sharma, Ashwani K.

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  17. Method of doping a semiconductor

    DOEpatents

    Yang, Chiang Y.; Rapp, Robert A.

    1983-01-01

    A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.

  18. Semiconductor radiation detector with internal gain

    DOEpatents

    Iwanczyk, Jan; Patt, Bradley E.; Vilkelis, Gintas

    2003-04-01

    An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an avalanche photodetector (APD). The ADP can be coupled with scintillators such as CsI(Tl), NaI(Tl), LSO or others to form large volume scintillation type gamma ray detectors for gamma ray spectroscopy, photon counting, gamma ray counting, etc. Arrays of the ADPs can be used to replace the photomultiplier tubes (PMTs) used in conjunction with scintillation crystals in conventional gamma cameras for nuclear medical imaging.

  19. Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes

    DOEpatents

    Weiss, Shimon; Bruchez, Jr., Marcel; Alivisatos, Paul

    1999-01-01

    A luminescent semiconductor nanocrystal compound is described which is capable of linking to an affinity molecule. The compound comprises (1) a semiconductor nanocrystal capable of emitting electromagnetic radiation (luminescing) in a narrow wavelength band and/or absorbing energy, and/or scattering or diffracting electromagnetic radiation--when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam; and (2) at least one linking agent, having a first portion linked to the semiconductor nanocrystal and a second portion capable of linking to an affinity molecule. The luminescent semiconductor nanocrystal compound is linked to an affinity molecule to form an organo luminescent semiconductor nanocrystal probe capable of bonding with a detectable substance in a material being analyzed, and capable of emitting electromagnetic radiation in a narrow wavelength band and/or absorbing, scattering, or diffracting energy when excited by an electromagnetic radiation source (of narrow or broad bandwidth) or a particle beam. The probe is stable to repeated exposure to light in the presence of oxygen and/or other radicals. Further described is a process for making the luminescent semiconductor nanocrystal compound and for making the organo luminescent semiconductor nanocrystal probe comprising the luminescent semiconductor nanocrystal compound linked to an affinity molecule capable of bonding to a detectable substance. A process is also described for using the probe to determine the presence of a detectable substance in a material.

  20. Method and apparatus for measuring electromagnetic radiation

    NASA Technical Reports Server (NTRS)

    Been, J. F. (Inventor)

    1973-01-01

    An apparatus and method are described in which the capacitance of a semiconductor junction subjected to an electromagnetic radiation field is utilized to indicate the intensity or strength of the radiation.

  1. Hard X-ray astrophysics

    NASA Technical Reports Server (NTRS)

    Rothschild, R. E.

    1981-01-01

    Past hard X-ray and lower energy satellite instruments are reviewed and it is shown that observation above 20 keV and up to hundreds of keV can provide much valuable information on the astrophysics of cosmic sources. To calculate possible sensitivities of future arrays, the efficiencies of a one-atmosphere inch gas counter (the HEAO-1 A-2 xenon filled HED3) and a 3 mm phoswich scintillator (the HEAO-1 A-4 Na1 LED1) were compared. Above 15 keV, the scintillator was more efficient. In a similar comparison, the sensitivity of germanium detectors did not differ much from that of the scintillators, except at high energies where the sensitivity would remain flat and not rise with loss of efficiency. Questions to be addressed concerning the physics of active galaxies and the diffuse radiation background, black holes, radio pulsars, X-ray pulsars, and galactic clusters are examined.

  2. Photoinduced superconductivity in semiconductors

    NASA Astrophysics Data System (ADS)

    Goldstein, Garry; Aron, Camille; Chamon, Claudio

    2015-02-01

    We show that optically pumped semiconductors can exhibit superconductivity. We illustrate this phenomenon in the case of a two-band semiconductor tunnel-coupled to broad-band reservoirs and driven by a continuous wave laser. More realistically, we also show that superconductivity can be induced in a two-band semiconductor interacting with a broad-spectrum light source. We furthermore discuss the case of a three-band model in which the middle band replaces the broad-band reservoirs as the source of dissipation. In all three cases, we derive the simple conditions on the band structure, electron-electron interaction, and hybridization to the reservoirs that enable superconductivity. We compute the finite superconducting pairing and argue that the mechanism can be induced through both attractive and repulsive interactions and is robust to high temperatures.

  3. Superconductivity in doped semiconductors

    NASA Astrophysics Data System (ADS)

    Bustarret, E.

    2015-07-01

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  4. GUARD RING SEMICONDUCTOR JUNCTION

    DOEpatents

    Goulding, F.S.; Hansen, W.L.

    1963-12-01

    A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

  5. Semiconductor laser diode

    SciTech Connect

    Amann, M.C.

    1982-09-28

    A semiconductor laser diode is disclosed with a connection electrode consisting of a chromium/gold alloy on a highly-doped gallium arsenide layer. The gallium arsenide layer is strip shaped and overlies a further lesser doped layer of gallium aluminum arsenide. The chromium/gold contact has a low-resistance junction only in the region of the more highly doped layer so that a strip shaped restriction of the current path occurs in the semiconductor body. Accordingly, a laser-active zone which is only strip-shaped is achieved.

  6. Semiconductor surface protection material

    NASA Technical Reports Server (NTRS)

    Packard, R. D. (Inventor)

    1973-01-01

    A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

  7. A spectroscopic method for the evaluation of surface passivation treatments on metal-oxide-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Walsh, Lee A.; Hurley, Paul K.; Lin, Jun; Cockayne, Eric; O'Regan, T. P.; Woicik, Joseph C.; Hughes, Greg

    2014-05-01

    Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements have been shown to provide complementary information on the electrical performance of Si and GaAs based metal-oxide-semiconductor (MOS) structures. The results obtained indicate that surface potential changes at the semiconductor/dielectric interface due to the presence of different work function metals can be detected from HAXPES measurements. Changes in the semiconductor band bending at zero gate voltage and the flat band voltage values derived from C-V measurements are in agreement with the semiconductor core level shifts measured from the HAXPES spectra. These results highlight the potential application of this measurement approach in the evaluation of the efficacy of surface passivation treatments: HAXPES—hard x-ray photoelectron spectroscopy; C-V—capacitance voltage; Dit—interface state density; BE—binding energy, at reducing defect states densities in MOS structures.

  8. Kansas Advanced Semiconductor Project

    SciTech Connect

    Baringer, P.; Bean, A.; Bolton, T.; Horton-Smith, G.; Maravin, Y.; Ratra, B.; Stanton, N.; von Toerne, E.; Wilson, G.

    2007-09-21

    KASP (Kansas Advanced Semiconductor Project) completed the new Layer 0 upgrade for D0, assumed key electronics projects for the US CMS project, finished important new physics measurements with the D0 experiment at Fermilab, made substantial contributions to detector studies for the proposed e+e- international linear collider (ILC), and advanced key initiatives in non-accelerator-based neutrino physics.

  9. Chemically Derivatized Semiconductor Photoelectrodes.

    ERIC Educational Resources Information Center

    Wrighton, Mark S.

    1983-01-01

    Deliberate modification of semiconductor photoelectrodes to improve durability and enhance rate of desirable interfacial redox processes is discussed for a variety of systems. Modification with molecular-based systems or with metals/metal oxides yields results indicating an important role for surface modification in devices for fundamental study…

  10. Amorphous semiconductor solar cell

    DOEpatents

    Dalal, Vikram L.

    1981-01-01

    A solar cell comprising a back electrical contact, amorphous silicon semiconductor base and junction layers and a top electrical contact includes in its manufacture the step of heat treating the physical junction between the base layer and junction layer to diffuse the dopant species at the physical junction into the base layer.

  11. Physics of Organic Semiconductors

    NASA Astrophysics Data System (ADS)

    Brütting, Wolfgang

    2004-05-01

    Organic semiconductors are of steadily growing interest as active components in electronics and optoelectronics. Due to their flexibility, low cost and ease-of-production they represent a valid alternative to conventional inorganic semiconductor technology in a number of applications, such as flat panel displays and illumination, plastic integrated circuits or solar energy conversion. Although first commercial applications of this technology are being realized nowadays, there is still the need for a deeper scientific understanding in order to achieve optimum device performance.This special issue of physica status solidi (a) tries to give an overview of our present-day knowledge of the physics behind organic semiconductor devices. Contributions from 17 international research groups cover various aspects of this field ranging from the growth of organic layers and crystals, their electronic properties at interfaces, their photophysics and electrical transport properties to the application of these materials in different devices like organic field-effect transistors, photovoltaic cells and organic light-emitting diodes.Putting together such a special issue one soon realizes that it is simply impossible to fully cover the whole area of organic semiconductors. Nevertheless, we hope that the reader will find the collection of topics in this issue useful for getting an up-to-date review of a field which is still developing very dynamically.

  12. Budgeting in Hard Times.

    ERIC Educational Resources Information Center

    Parrino, Frank M.

    2003-01-01

    Interviews with school board members and administrators produced a list of suggestions for balancing a budget in hard times. Among these are changing calendars and schedules to reduce heating and cooling costs; sharing personnel; rescheduling some extracurricular activities; and forming cooperative agreements with other districts. (MLF)

  13. Hard (and Soft) Facts.

    ERIC Educational Resources Information Center

    Kennedy, Mike

    1999-01-01

    Provides guidelines to help schools maintain hard floors and carpets, including special areas in schools and colleges that need attention and the elements needed to have a successful carpet-maintenance program. The importance of using heavy equipment to lessen time and effort is explained as are the steps maintenance workers can take to make the…

  14. CSI: Hard Drive

    ERIC Educational Resources Information Center

    Sturgeon, Julie

    2008-01-01

    Acting on information from students who reported seeing a classmate looking at inappropriate material on a school computer, school officials used forensics software to plunge the depths of the PC's hard drive, searching for evidence of improper activity. Images were found in a deleted Internet Explorer cache as well as deleted file space.…

  15. Running in Hard Times

    ERIC Educational Resources Information Center

    Berry, John N., III

    2009-01-01

    Roberta Stevens and Kent Oliver are campaigning hard for the presidency of the American Library Association (ALA). Stevens is outreach projects and partnerships officer at the Library of Congress. Oliver is executive director of the Stark County District Library in Canton, Ohio. They have debated, discussed, and posted web sites, Facebook pages,…

  16. Hard X-ray micro-spectroscopy at Berliner Elektronenspeicherring für Synchrotronstrahlung II

    NASA Astrophysics Data System (ADS)

    Erko, A.; Zizak, I.

    2009-09-01

    The capabilities of the X-ray beamlines at Berliner Elektronenspeicherring für Synchrotronstrahlung II (BESSY II) for hard X-ray measurements with micro- and nanometer spatial resolution are reviewed. The micro-X-ray fluorescence analysis (micro-XRF), micro-extended X-ray absorption fine structure (micro-EXAFS), micro-X-ray absorption near-edge structure (micro-XANES) as well as X-ray standing wave technique (XSW), X-ray beam induced current (XBIC) in combination with micro-XRF and micro-diffraction as powerful methods for organic and inorganic sample characterization with synchrotron radiation are discussed. Mono and polycapillary optical systems were used for fine X-ray focusing down to 1 µm spot size with monochromatic and white synchrotron radiation. Polycapillary based confocal detection was applied for depth-resolved micro-XRF analysis with a volume resolution down to 3.4 · 10 - 6 mm 3. Standing wave excitation in waveguides was also applied to nano-EXAFS measurements with depth resolution on the order of 1 nm. Several examples of the methods and its applications in material research, biological investigations and metal-semiconductor interfaces analysis are given.

  17. Nonvolatile Rad-Hard Holographic Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

    2001-01-01

    We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

  18. The Effect of Total Ionizing Dose Degradation of Laptop Hard Disks

    NASA Technical Reports Server (NTRS)

    Nguyen, D. N.; Guertin, S. M.; Patterson, J. D.

    2005-01-01

    A series of total ionizing dose (TID) measurements were performed on commercial hard drives to explore the possible uses of the devices for the high radiation mission, and to help the understanding of the reliability of current hard drive technology. Three different models from three major manufacturers were tested with the aid of a commercial hard drive test system.

  19. Optimizing biased semiconductor superlattices for terahertz amplification

    SciTech Connect

    Lei, Xiaoli; Wang, Dawei; Wu, Zhaoxin; Dignam, M. M.

    2014-08-11

    Over the past 15 yr or more, researchers have been trying to achieve gain for electromagnetic fields in the terahertz frequency region using biased semiconductor superlattices, but with little success. In this work, we employ our model of the excitonic states in biased GaAs/Al{sub 0.3}Ga{sub 0.7}As semiconductor superlattices to find the optimal structures for amplification of terahertz radiation. In particular, we determine the optimum well width, barrier width, and bias field for terahertz fields with frequencies ranging from 1 to 4 terahertz. We find that gain coefficients on the order of 40 cm{sup −1} should be achievable over most of this frequency range.

  20. Semiconductor-based, large-area, flexible, electronic devices

    DOEpatents

    Goyal, Amit

    2011-03-15

    Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

  1. SiC detectors for radiation sources characterization and fast plasma diagnostic

    NASA Astrophysics Data System (ADS)

    Cannavò, A.; Torrisi, L.

    2016-09-01

    Semiconductor detectors based on SiC have been investigated to characterize the radiations (photons and particles) emitted from different sources, such as radioactive sources, electron guns, X-ray tubes and laser-generated plasmas. Detectors show high response velocity, low leakage current, high energy gap and high radiation hardness. Their high detection efficiency permits to use the detectors in spectroscopic mode and in time-of-flight (TOF) approach, generally employed to monitor low and high radiation fluxes, respectively. Using the laser start signal, they permit to study the properties of the generated plasma in vacuum by measuring accurately the particle velocity and energy using pulsed lasers at low and high intensities. Possible applications will be reported and discussed.

  2. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  3. Neutron and gamma irradiation effects on power semiconductor switches

    NASA Technical Reports Server (NTRS)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  4. Hard Times Hit Schools

    ERIC Educational Resources Information Center

    McNeil, Michele

    2008-01-01

    Hard-to-grasp dollar amounts are forcing real cuts in K-12 education at a time when the cost of fueling buses and providing school lunches is increasing and the demands of the federal No Child Left Behind Act still loom larger over states and districts. "One of the real challenges is to continue progress in light of the economy," said Gale Gaines,…

  5. Hard Diffraction at CDF

    SciTech Connect

    Melese, P.; CDF Collaboration

    1997-06-01

    We present results on diffractive production of hard processes in {anti p}p collisions at {radical}s = 1.8 TeV at the Tevatron using the CDF detector. The signatures used to identify diffractive events are the forward rapidity gap and/or the detection of a recoil antiproton with high forward momentum. We have observed diffractive W- boson, dijet, and heavy quark production. We also present results on double-pomeron production of dijets.

  6. Work Hard. Be Nice

    ERIC Educational Resources Information Center

    Mathews, Jay

    2009-01-01

    In 1994, fresh from a two-year stint with Teach for America, Mike Feinberg and Dave Levin inaugurated the Knowledge Is Power Program (KIPP) in Houston with an enrollment of 49 5th graders. By this Fall, 75 KIPP schools will be up and running, setting children from poor and minority families on a path to college through a combination of hard work,…

  7. SUPER HARD SURFACED POLYMERS

    SciTech Connect

    Mansur, Louis K; Bhattacharya, R; Blau, Peter Julian; Clemons, Art; Eberle, Cliff; Evans, H B; Janke, Christopher James; Jolly, Brian C; Lee, E H; Leonard, Keith J; Trejo, Rosa M; Rivard, John D

    2010-01-01

    High energy ion beam surface treatments were applied to a selected group of polymers. Of the six materials in the present study, four were thermoplastics (polycarbonate, polyethylene, polyethylene terephthalate, and polystyrene) and two were thermosets (epoxy and polyimide). The particular epoxy evaluated in this work is one of the resins used in formulating fiber reinforced composites for military helicopter blades. Measures of mechanical properties of the near surface regions were obtained by nanoindentation hardness and pin on disk wear. Attempts were also made to measure erosion resistance by particle impact. All materials were hardness tested. Pristine materials were very soft, having values in the range of approximately 0.1 to 0.5 GPa. Ion beam treatment increased hardness by up to 50 times compared to untreated materials. For reference, all materials were hardened to values higher than those typical of stainless steels. Wear tests were carried out on three of the materials, PET, PI and epoxy. On the ion beam treated epoxy no wear could be detected, whereas the untreated material showed significant wear.

  8. Semiconductor eutectic solar cell

    NASA Astrophysics Data System (ADS)

    Yue, A. S.; Yu, J. G.

    1986-12-01

    Two-phase semiconducting eutectics are potential device-materials. Of these, the SnSe-SnSe2 eutectic was chosen for studies in detail because it consists of multi-p/n-layers of SnSe and SnSe2 semiconductors. Since plasma frequency has not been detected in its infrared reflectance spectrum up to 40 micrometers of wavelength, it suggests that the SnSe-SnSe2 eutectic is a nondegenerate semiconductor. As-grown SnSe2 single crystals have hexagonal crystallographic structure and show n-type conductivity. Polycrystalline SnSe and SnSe2 films have been successfully prepared in vacuum using a close-space-vapor transport technique.

  9. Light amplification using semiconductors

    SciTech Connect

    Dupuis, R.D.

    1987-06-01

    During the summer of 1953, John von Neumann discussed his ideas concerning light amplification using semiconductors with Edward Teller. In September of that year, von Neumann sent a manuscript containing his ideas and calculations on this subject to Teller for his comments. To the best of our knowledge, von Neumann did not take time to work further on these ideas, and the manuscript remained unpublished. These previously unpublished writings of John von Neumann on the subject of light amplification in semiconductors are printed as a service to the laser community. While von Neumann's original manuscript and his letter to Teller are available to anyone who visits the Library of Congress, it is much more convenient to have this paper appear in an archival journal.

  10. Plasmonically-enhanced mid-infrared photoluminescence in a metal/narrow-gap semiconductor structure

    NASA Astrophysics Data System (ADS)

    Lu, Pengqi; Cai, Chunfeng; Zhang, Bingpo; Liu, Bozhi; Wu, Huizhen; Bi, Gang; Si, Jianxiao

    2016-05-01

    We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices.

  11. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  12. Tunable semiconductor lasers

    NASA Technical Reports Server (NTRS)

    Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

    2006-01-01

    Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

  13. Semiconductor Ion Implanters

    NASA Astrophysics Data System (ADS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at 7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at 6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing `only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around 2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  14. Semiconductor Ion Implanters

    SciTech Connect

    MacKinnon, Barry A.; Ruffell, John P.

    2011-06-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion. Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  15. Synchronous semiconductor memory device

    SciTech Connect

    Onno, C.; Hirata, M.

    1989-11-21

    This patent describes a synchronous semiconductor memory device. It comprises: first latch means for latching a write command in synchronism with clock signal; second latch means for latching a write data in synchronism with the clock signal and for outputting two write process signals based on the write data latched thereby; pulse generating means for generating an internal write pulse signal based on the write command latched by the first latch means. The internal write pulse signal having a semiconductor memory device; write control means supplied with the internal write pulse signal and the write process signals for controlling write and read operations of the synchronous semiconductor memory device; memory means for storing the write data latched by the second latch means; and noise preventing means coupled to the second latch means and the write control means for supplying the write process signals to the write control means only in the write mode responsive to the internal write pulse signal and for setting the write process signals to fixed potentials during a time other than the write mode.

  16. Integrated photo-responsive metal oxide semiconductor circuit

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzban D. (Inventor); Dargo, David R. (Inventor); Lyons, John C. (Inventor)

    1987-01-01

    An infrared photoresponsive element (RD) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device by depositing a layer of a lead chalcogenide as a photoresistive element forming an ohmic bridge between two metallization strips serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.

  17. Method for altering the luminescence of a semiconductor

    DOEpatents

    Barbour, J. Charles; Dimos, Duane B.

    1999-01-01

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region.

  18. Method for altering the luminescence of a semiconductor

    DOEpatents

    Barbour, J.C.; Dimos, D.B.

    1999-01-12

    A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensity of luminescence of the irradiated region. 4 figs.

  19. Fundamental properties of semiconductor materials, and material performance in detectors

    NASA Technical Reports Server (NTRS)

    Casper, K. J.

    1973-01-01

    Procedures for determining fundamental properties of semiconductor materials, their performance as radiation detectors, and their service life as such detectors are given. Relationships were established between the minority carrier lifetime in the bulk of the material and the charge collection efficiency of the detector.

  20. Semiconductor Bolometers Give Background-Limited Performance

    NASA Technical Reports Server (NTRS)

    Goebel, John; McMurray, Robert

    2006-01-01

    Semiconductor bolometers that are capable of detecting electromagnetic radiation over most or all of the infrared spectrum and that give background-limited performance at operating temperatures from 20 to 300 K have been invented. The term background-limited performance as applied to a bolometer, thermopile, or other infrared detector signifies that the ability to detect infrared signals that originate outside the detector is limited primarily by thermal noise attributable to the background radiation generated external to the bolometer. The signal-to-noise ratios and detectivities of the bolometers and thermopiles available prior to this invention have been lower than those needed for background-limited performance by factors of about 100 and 10, respectively. Like other electrically resistive bolometers, a device according to the invention exhibits an increase in electrical resistance when heated by infrared radiation. Depending on whether the device is operated under the customary constant- current or constant-voltage bias, the increase in electrical resistance can be measured in terms of an increase in voltage across the device or a decrease in current through the device, respectively. In the case of a semiconductor bolometer, it is necessary to filter out visible and shorter-wavelength light that could induce photoconductivity and thereby counteract all or part of the desired infrared- induced increase in resistance. The basic semiconductor material of a bolometer according to the invention is preferably silicon doped with one or more of a number of elements, each of which confers a different variable temperature coefficient of resistance. Suitable dopants include In, Ga, S, Se, Te, B, Al, As, P, and Sb. The concentration of dopant preferably lies in the range between 0.1 and 1,000 parts per billion.

  1. Ultrasonic characterization of materials hardness

    PubMed

    Badidi Bouda A; Benchaala; Alem

    2000-03-01

    In this paper, an experimental technique has been developed to measure velocities and attenuation of ultrasonic waves through a steel with a variable hardness. A correlation between ultrasonic measurements and steel hardness was investigated.

  2. Indistinguishable Photons from Independent Semiconductor Nanostructures

    NASA Astrophysics Data System (ADS)

    Sanaka, Kaoru; Pawlis, Alexander; Ladd, Thaddeus D.; Lischka, Klaus; Yamamoto, Yoshihisa

    2009-07-01

    We demonstrate quantum interference between photons generated by the radiative decay processes of excitons that are bound to isolated fluorine donor impurities in ZnSe/ZnMgSe quantum-well nanostructures. The ability to generate single photons from these devices is confirmed by autocorrelation experiments, and the indistinguishability of photons emitted from two independent nanostructures is confirmed via a Hong-Ou-Mandel dip. These results indicate that donor impurities in appropriately engineered semiconductor structures can portray atomlike homogeneity and coherence properties, potentially enabling scalable technologies for future large-scale optical quantum computers and quantum communication networks.

  3. Photocurrents in semiconductors and semiconductor quantum wells analyzed by k.p-based Bloch equations

    NASA Astrophysics Data System (ADS)

    Podzimski, Reinold; Duc, Huynh Thanh; Priyadarshi, Shekhar; Schmidt, Christian; Bieler, Mark; Meier, Torsten

    2016-03-01

    Using a microscopic theory that combines k.p band structure calculations with multisubband semiconductor Bloch equations we are capable of computing coherent optically-induced rectification, injection, and shift currents in semiconductors and semiconductor nanostructures. A 14-band k.p theory has been employed to obtain electron states in non-centrosymmetric semiconductor systems. Numerical solutions of the multisubband Bloch equations provide a detailed and transparent description of the dynamics of the material excitations in terms of interband and intersubband polarizations/coherences and occupations. Our approach allows us to calculate and analyze photocurrents in the time and the frequency domains for bulk as well as quantum well and quantum wire systems with various growth directions. As examples, we present theoretical results on the rectification and shift currents in bulk GaAs and GaAs-based quantum wells. Moreover, we compare our results with experiments on shift currents. In the experiments the terahertz radiation emitted from the transient currents is detected via electro-optic sampling. This comparison is important from two perspectives. First, it helps to validate the theoretical model. Second, it allows us to investigate the microscopic origins of interesting features observed in the experiments.

  4. Hard metal composition

    DOEpatents

    Sheinberg, H.

    1983-07-26

    A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 wt % boron carbide and the remainder a metal mixture comprising from 70 to 90% tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 and 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

  5. Hard metal composition

    DOEpatents

    Sheinberg, Haskell

    1986-01-01

    A composition of matter having a Rockwell A hardness of at least 85 is formed from a precursor mixture comprising between 3 and 10 weight percent boron carbide and the remainder a metal mixture comprising from 70 to 90 percent tungsten or molybdenum, with the remainder of the metal mixture comprising nickel and iron or a mixture thereof. The composition has a relatively low density of between 7 to 14 g/cc. The precursor is preferably hot pressed to yield a composition having greater than 100% of theoretical density.

  6. Hard Exclusive Pion Leptoproduction

    NASA Astrophysics Data System (ADS)

    Kroll, Peter

    2016-08-01

    In this talk it is reported on an analysis of hard exclusive leptoproduction of pions within the handbag approach. It is argued that recent measurements of this process performed by HERMES and CLAS clearly indicate the occurrence of strong contributions from transversely polarized photons. Within the handbag approach such γ ^{ *}_T→ π transitions are described by the transversity GPDs accompanied by twist-3 pion wave functions. It is shown that the handbag approach leads to results on cross sections and single-spin asymmetries in fair agreement with experiment. Predictions for other pseudoscalar meson channels are also briefly discussed.

  7. New developments in power semiconductors

    NASA Technical Reports Server (NTRS)

    Sundberg, G. R.

    1983-01-01

    This paper represents an overview of some recent power semiconductor developments and spotlights new technologies that may have significant impact for aircraft electric secondary power. Primary emphasis will be on NASA-Lewis-supported developments in transistors, diodes, a new family of semiconductors, and solid-state remote power controllers. Several semiconductor companies that are moving into the power arena with devices rated at 400 V and 50 A and above are listed, with a brief look at a few devices.

  8. Composite polycrystalline semiconductor neutron detectors

    NASA Astrophysics Data System (ADS)

    Schieber, M.; Zuck, A.; Marom, G.; Khakhan, O.; Roth, M.; Alfassi, Z. B.

    2007-08-01

    Composite polycrystalline semiconductor detectors bound with different binders, both inorganic molten glasses, such as B 2O 3, PbO/B 2O 3, Bi 2O 3/PbO, and organic polymeric binders, such as isotactic polypropylene (iPP), polystyrene or nylon-6, and coated with different metal electrodes were tested at room temperature for α-particles and very weak thermal neutron sources. The detector materials tested were natural occurring hexagonal BN and cubic LiF, where both are not containing enriched isotopes of 10B or 6Li. The radiation sources were 5.5 MeV α's from 241Am, 5.3 MeV from 210Po and also 4.8 MeV from 226Ra. Some of these detectors were also tested with thermal neutrons from very weak 227Ac 9Be, 241Am- 10Be sources and also from a weak 238Pu+ 9Be and somewhat stronger 252Cf sources. The neutrons were thermalized with paraffin. Despite very low signal to noise ratio of only ˜2, the neutrons could be counted by subtracting the noise from the signal.

  9. Dislocation-induced chirality of semiconductor nanocrystals.

    PubMed

    Baimuratov, Anvar S; Rukhlenko, Ivan D; Gun'ko, Yurii K; Baranov, Alexander V; Fedorov, Anatoly V

    2015-03-11

    Optical activity is a common natural phenomenon, which occurs in individual molecules, biomolecules, biological species, crystalline solids, liquid crystals, and various nanosized objects, leading to numerous important applications in almost every field of modern science and technology. Because this activity can hardly be altered, creation of artificial active media with controllable optical properties is of paramount importance. Here, for the first time to the best of our knowledge, we theoretically demonstrate that optical activity can be inherent to many semiconductor nanowires, as it is induced by chiral dislocations naturally developing during their growth. By assembling such nanowires in two- or three-dimensional periodic lattices, one can create optically active quantum supercrystals whose activity can be varied in many ways owing to the size quantization of the nanowires' energy spectra. We believe that this research is of particular importance for the future development of semiconducting nanomaterials and their applications in nanotechnology, chemistry, biology, and medicine.

  10. Integrated devices including cleaved semiconductor lasers

    SciTech Connect

    Chen, C.Y.

    1987-11-17

    A process for fabricating a semiconductor device is described comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.

  11. OPENING ADDRESS: Heterostructures in Semiconductors

    NASA Astrophysics Data System (ADS)

    Grimmeiss, Hermann G.

    1996-01-01

    Good morning, Gentlemen! On behalf of the Nobel Foundation, I should like to welcome you to the Nobel Symposium on "Heterostructures in Semiconductors". It gives me great pleasure to see so many colleagues and old friends from all over the world in the audience and, in particular, to bid welcome to our Nobel laureates, Prof. Esaki and Prof. von Klitzing. In front of a different audience I would now commend the scientific and technological importance of heterostructures in semiconductors and emphatically emphasise that heterostructures, as an important contribution to microelectronics and, hence, information technology, have changed societies all over the world. I would also mention that information technology is one of the most important global key industries which covers a wide field of important areas each of which bears its own character. Ever since the invention of the transistor, we have witnessed a fantastic growth in semiconductor technology, leading to more complex functions and higher densities of devices. This development would hardly be possible without an increasing understanding of semiconductor materials and new concepts in material growth techniques which allow the fabrication of previously unknown semiconductor structures. But here and today I will not do it because it would mean to carry coals to Newcastle. I will therefore not remind you that heterostructures were already suggested and discussed in detail a long time before proper technologies were available for the fabrication of such structures. Now, heterostructures are a foundation in science and part of our everyday life. Though this is certainly true, it is nevertheless fair to say that not all properties of heterostructures are yet understood and that further technologies have to be developed before a still better understanding is obtained. The organisers therefore hope that this symposium will contribute not only to improving our understanding of heterostructures but also to opening new

  12. An investigation of medical radiation detection using CMOS image sensors in smartphones

    NASA Astrophysics Data System (ADS)

    Kang, Han Gyu; Song, Jae-Jun; Lee, Kwonhee; Nam, Ki Chang; Hong, Seong Jong; Kim, Ho Chul

    2016-07-01

    Medical radiation exposure to patients has increased with the development of diagnostic X-ray devices and multi-channel computed tomography (CT). Despite the fact that the low-dose CT technique can significantly reduce medical radiation exposure to patients, the increasing number of CT examinations has increased the total medical radiation exposure to patients. Therefore, medical radiation exposure to patients should be monitored to prevent cancers caused by diagnostic radiation. However, without using thermoluminescence or glass dosimeters, it is hardly measure doses received by patients during medical examinations accurately. Hence, it is necessary to develop radiation monitoring devices and algorithms that are reasonably priced and have superior radiation detection efficiencies. The aim of this study is to investigate the feasibility of medical dose measurement using complementary metal oxide semiconductor (CMOS) sensors in smartphone cameras with an algorithm to extract the X-ray interacted pixels. We characterized the responses of the CMOS sensors in a smartphone with respect to the X-rays generated by a general diagnostic X-ray system. The characteristics of the CMOS sensors in a smartphone camera, such as dose response linearity, dose rate dependence, energy dependence, angular dependence, and minimum detectable activity were evaluated. The high energy gamma-ray of 662 keV from Cs-137 can be detected using the smartphone camera. The smartphone cameras which employ the developed algorithm can detect medical radiations.

  13. The electronic structure of hard materials

    NASA Astrophysics Data System (ADS)

    Winarski, Robert Paul

    This research dissertation involves an experimental as well as a theoretical examination of the electronic structure of hard materials. The materials that are presented in this dissertation cover a wide class of materials, consisting of transition metal borides, irradiated polymer films, theoretically predicted superhard semiconductors, doped intermetallic alloys, and transition metal carbides. The borides are traditionally used in high temperature, hard coating applications, such as rocket nozzle linings, extreme wear surfaces, and corrosion coatings. Measurements of the borides appear to show that the bonding in these hard materials is primarily between the boron atoms in these systems. Also of note are the remarkably short interatomic distances between the boron atoms and between the boron and metal atoms in these materials. Irradiated polymer films are being developed for electronic applications, in the hopes that circuits can be developed that can benefit from the high thermal stability, dielectric properties, and mechanical properties provided by these materials. C3N4 is a theoretically predicted superhard material, and some of the first soft x-ray emission measurements of well-characterized samples of this compound are discussed in this work. Intermetallic alloys, in particular Ni3Al, are rather hard, but brittle metallic alloys. It has been found that the addition of boron atoms, in rather low concentrations, can increase the ductility of these alloys, allowing them to be utilized in a wider variety of applications. Measurements of this system have examined a question regarding the positioning of the boron atoms in the structures of this alloy. Finally, the transition metal carbides are used extensively as coatings in industrial applications such as cutting and grinding tools, and polishing compounds. Measurements of these materials suggest that the high degree of covalency between the metal and carbon atoms is primarily responsible for the hardness of

  14. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, Mark W.

    1990-01-01

    A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  15. Method of passivating semiconductor surfaces

    DOEpatents

    Wanlass, M.W.

    1990-06-19

    A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

  16. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core–shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  17. Semiconductor plasmonic nanolasers: current status and perspectives.

    PubMed

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier. PMID:27459210

  18. Semiconductor plasmonic nanolasers: current status and perspectives

    NASA Astrophysics Data System (ADS)

    Gwo, Shangjr; Shih, Chih-Kang

    2016-08-01

    Scaling down semiconductor lasers in all three dimensions holds the key to the development of compact, low-threshold, and ultrafast coherent light sources, as well as integrated optoelectronic and plasmonic circuits. However, the minimum size of conventional semiconductor lasers utilizing dielectric cavity resonators (photonic cavities) is limited by the diffraction limit. To date, surface plasmon amplification by stimulated emission of radiation (spaser)-based plasmonic nanolaser is the only photon and plasmon-emitting device capable of this remarkable feat. Specifically, it has been experimentally demonstrated that the use of plasmonic cavities based on metal-insulator-semiconductor (MIS) nanostructures can indeed break the diffraction limit in all three dimensions. In this review, we present an updated overview of the current status for plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers. In particular, by using composition-varied indium gallium nitride/gallium nitride core-shell nanorods, it is possible to realize all-color, single-mode nanolasers in the full visible wavelength range with ultralow continuous-wave (CW) lasing thresholds. The lasing action in these subdiffraction plasmonic cavities is achieved via a unique auto-tuning mechanism based on the property of weak size dependence inherent in plasmonic nanolasers. As for the choice of metals in the plasmonic structures, epitaxial silver films and giant colloidal silver crystals have been shown to be the superior constituent materials for plasmonic cavities due to their low plasmonic losses in the visible and near-infrared (NIR) spectral regions. In this review, we also provide some perspectives on the challenges and opportunities in this exciting new research frontier.

  19. Layered semiconductor neutron detectors

    DOEpatents

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  20. Semiconductor superlattice photodetectors

    NASA Technical Reports Server (NTRS)

    Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

    1984-01-01

    A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

  1. Deep levels in semiconductors

    NASA Astrophysics Data System (ADS)

    Watkins, George D.

    1983-03-01

    The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction with the lattice vacancy, into which the impurity is placed. This interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy.

  2. Semiconductor structure and devices

    NASA Technical Reports Server (NTRS)

    Dinkel, Nancy A. (Inventor); Goldstein, Bernard (Inventor); Ettenberg, Michael (Inventor)

    1987-01-01

    Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

  3. Isotopically controlled semiconductors

    SciTech Connect

    Haller, Eugene E.

    2001-12-21

    Semiconductor bulk crystals and multilayer structures with controlled isotopic composition have attracted much scientific and technical interest in the past few years. Isotopic composition affects a large number of physical properties, including phonon energies and lifetimes, bandgaps, the thermal conductivity and expansion coefficient and spin-related effects. Isotope superlattices are ideal media for self-diffusion studies. In combination with neutron transmutation doping, isotope control offers a novel approach to metal-insulator transition studies. Spintronics, quantum computing and nanoparticle science are emerging fields using isotope control.

  4. Semiconductor nanorod liquid crystals

    SciTech Connect

    Li, Liang-shi; Walda, Joost; Manna, Liberato; Alivisatos, A. Paul

    2002-01-28

    Rodlike molecules form liquid crystalline phases with orientational order and positional disorder. The great majority of materials in which liquid crystalline phases have been observed are comprised of organic molecules or polymers, even though there has been continuing and growing interest in inorganic liquid crystals. Recent advances in the control of the sizes and shapes of inorganic nanocrystals allow for the formation of a broad class of new inorganic liquid crystals. Here we show the formation of liquid crystalline phases of CdSe semiconductor nanorods. These new liquid crystalline phases may have great importance for both application and fundamental study.

  5. Conference on the High Energy Radiation Background in Space, held in conjunction with IEEE Nuclear and Space Radiation Effects Conference. Workshop record.

    NASA Astrophysics Data System (ADS)

    The following topics were dealt with: the high energy radiation background in space, cosmic rays, solar particle events, gamma-ray astronomical telescopes, detector noise due to background radiations, semiconductor particle counters, magnetosphere and radiation belts.

  6. Laser interferometric method for determining the carrier diffusion length in semiconductors

    SciTech Connect

    Manukhov, V. V.; Fedortsov, A. B.; Ivanov, A. S.

    2015-09-15

    A new laser interferometric method for measuring the carrier diffusion length in semiconductors is proposed. The method is based on the interference–absorption interaction of two laser radiations in a semiconductor. Injected radiation generates additional carriers in a semiconductor, which causes a change in the material’s optical constants and modulation of the probing radiation passed through the sample. When changing the distance between carrier generation and probing points, a decrease in the carrier concentration, which depends on the diffusion length, is recorded. The diffusion length is determined by comparing the experimental and theoretical dependences of the probe signal on the divergence of the injector and probe beams. The method is successfully tested on semiconductor samples with different thicknesses and surface states and can be used in scientific research and the electronics industry.

  7. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, R.M.; Drummond, T.J.; Gourley, P.L.; Zipperian, T.E.

    1987-08-31

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration. 8 figs.

  8. Semiconductor devices incorporating multilayer interference regions

    DOEpatents

    Biefeld, Robert M.; Drummond, Timothy J.; Gourley, Paul L.; Zipperian, Thomas E.

    1990-01-01

    A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

  9. Aqueous Based Semiconductor Nanocrystals.

    PubMed

    Jing, Lihong; Kershaw, Stephen V; Li, Yilin; Huang, Xiaodan; Li, Yingying; Rogach, Andrey L; Gao, Mingyuan

    2016-09-28

    This review summarizes traditional and recent nonconventional, bioinspired, methods for the aqueous synthesis of colloidal semiconductor quantum dots (QDs). The basic chemistry concepts are critically emphasized at the very beginning as these are strongly correlated with the selection of ligands and the optimal formation of aqueous QDs and their more sophisticated structures. The synergies of biomimetic and biosynthetic methods that can combine biospecific reactivity with the robust and strong optical responses of QDs have also resulted in new approaches to the synthesis of the nanoparticles themselves. A related new avenue is the recent extension of QD synthesis to form nanoparticles endowed with chiral optical properties. The optical characteristics of QD materials and their advanced forms such as core/shell heterostructures, alloys, and doped QDs are discussed: from the design considerations of optical band gap tuning, the control and reduction of the impact of surface traps, the consideration of charge carrier processes that affect emission and energy and charge transfer, to the impact and influence of lattice strain. We also describe the considerable progress in some selected QD applications such as in bioimaging and theranostics. The review concludes with future strategies and identification of key challenges that still need to be resolved in reaching very attractive, scalable, yet versatile aqueous syntheses that may widen the scope of commercial applications for semiconductor nanocrystals. PMID:27586892

  10. Isotopically engineered semiconductors

    NASA Astrophysics Data System (ADS)

    Haller, E. E.

    1995-04-01

    Scientific interest, technological promise, and increased availability of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This review of mostly recent activities begins with an introduction to some past classical experiments which have been performed on isotopically controlled semiconductors. A review of the natural isotopic composition of the relevant elements follows. Some materials aspects resulting in part from the high costs of enriched isotopes are discussed next. Raman spectroscopy studies with a number of isotopically pure and deliberately mixed Ge bulk crystals show that the Brillouin-zone-center optical phonons are not localized. Their lifetime is almost independent of isotopic disorder, leading to homogeneous Raman line broadening. Studies with short period isotope superlattices consisting of alternating layers of n atomic planes of 70Ge and 74Ge reveal a host of zone-center phonons due to Brillouin-zone folding. At n≳40 one observes two phonon lines at frequencies corresponding to the bulk values of the two isotopes. In natural diamond, isotope scattering of the low-energy phonons, which are responsible for the thermal conductivity, is very strongly affected by small isotope disorder. Isotopically pure 12C diamond crystals exhibit thermal conductivities as high as 410 W cm-1 K-1 at 104 K, leading to projected values of over 2000 W cm-1 K-1 near 80 K. The changes in phonon properties with isotopic composition also weakly affect the electronic band structures and the lattice constants. The latter isotope dependence is most relevant for future standards of length based on crystal lattice constants. Capture of thermal neutrons by isotope nuclei followed by nuclear decay produces new elements, resulting in a very large number of possibilities for isotope selective doping of semiconductors. This neutron transmutation of isotope nuclei, already used

  11. Additional compound semiconductor nanowires for photonics

    NASA Astrophysics Data System (ADS)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  12. Progress in semiconductor drift detectors

    SciTech Connect

    Rehak, P.; Walton, J.; Gatti, E.; Longoni, A.; Sanpietro, M.; Kemmer, J.; Dietl, H.; Holl, P.; Klanner, R.; Lutz, G.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements.

  13. Variable temperature semiconductor film deposition

    DOEpatents

    Li, Xiaonan; Sheldon, Peter

    1998-01-01

    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  14. Variable temperature semiconductor film deposition

    DOEpatents

    Li, X.; Sheldon, P.

    1998-01-27

    A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

  15. Fibre ring cavity semiconductor laser

    SciTech Connect

    Duraev, V P; Medvedev, S V

    2013-10-31

    This paper presents a study of semiconductor lasers having a polarisation maintaining fibre ring cavity. We examine the operating principle and report main characteristics of a semiconductor ring laser, in particular in single- and multiple-frequency regimes, and discuss its application areas. (lasers)

  16. Stripline mount for semiconductor lasers

    SciTech Connect

    Dietrich, N.R.; Holbrook, W.R.; Johnson, A.F. Jr.; Zacharias, A.

    1988-08-02

    An arrangement for coupling a semiconductor optical device to a signal source, is described, the arrangement comprising a stripline transmission path having a predetermined characteristic impedance Z/sub 0/; and resistance means connected in series with the stripline transmission path, chosen to provide impedance matching between the stripline transmission path and an associated semiconductor optical device.

  17. Physics with isotopically controlled semiconductors

    SciTech Connect

    Haller, E. E.

    2010-07-15

    This paper is based on a tutorial presentation at the International Conference on Defects in Semiconductors (ICDS-25) held in Saint Petersburg, Russia in July 2009. The tutorial focused on a review of recent research involving isotopically controlled semiconductors. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, is the most prominent effect for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples.

  18. Microcircuit radiation effects databank

    NASA Technical Reports Server (NTRS)

    1983-01-01

    Radiation test data submitted by many testers is collated to serve as a reference for engineers who are concerned with and have some knowledge of the effects of the natural radiation environment on microcircuits. Total dose damage information and single event upset cross sections, i.e., the probability of a soft error (bit flip) or of a hard error (latchup) are presented.

  19. Radiation Hardening of Computers

    NASA Technical Reports Server (NTRS)

    Nichols, D. K.; Smith, L. S.; Zoutendyk, J. A.; Giddings, A. E.; Hewlett, F. W.; Treece, R. K.

    1986-01-01

    Single-event upsets reduced by use of oversize transistors. Computers made less susceptible to ionizing radiation by replacing bipolar integrated circuits with properly designed, complementary metaloxide-semiconductor (CMOS) circuits. CMOS circuit chips made highly resistant to single-event upset (SEU), especially when certain feedback resistors are incorporated. Redesigned chips also consume less power than original chips.

  20. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, D.C.

    1980-12-17

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein in the edge of which closely approaches but is spaced from the current collector strips.

  1. Photovoltaic radiation detector element

    DOEpatents

    Agouridis, Dimitrios C.

    1983-01-01

    A radiation detector element is formed of a body of semiconductor material, a coating on the body which forms a photovoltaic junction therewith, and a current collector consisting of narrow metallic strips, the aforesaid coating having an opening therein the edge of which closely approaches but is spaced from the current collector strips.

  2. Radiation detection system

    DOEpatents

    Whited, R.C.

    A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

  3. Elimination of charge carrier trapping in diluted semiconductors

    NASA Astrophysics Data System (ADS)

    Abbaszadeh, D.; Kunz, A.; Wetzelaer, G. A. H.; Michels, J. J.; Crăciun, N. I.; Koynov, K.; Lieberwirth, I.; Blom, P. W. M.

    2016-06-01

    In 1962, Mark and Helfrich demonstrated that the current in a semiconductor containing traps is reduced by N/Ntr, with N the amount of transport sites, Nt the amount of traps and r a number that depends on the trap energy distribution. For r > 1, the possibility opens that trapping effects can be nearly eliminated when N and Nt are simultaneously reduced. Solution-processed conjugated polymers are an excellent model system to test this hypothesis, because they can be easily diluted by blending them with a high-bandgap semiconductor. We demonstrate that in conjugated polymer blends with 10% active semiconductor and 90% high-bandgap host, the typical strong electron trapping can be effectively eliminated. As a result we were able to fabricate polymer light-emitting diodes with balanced electron and hole transport and reduced non-radiative trap-assisted recombination, leading to a doubling of their efficiency at nearly ten times lower material costs.

  4. Semiconductor optoelectronic devices for free-space optical communications

    NASA Technical Reports Server (NTRS)

    Katz, J.

    1983-01-01

    The properties of individual injection lasers are reviewed, and devices of greater complexity are described. These either include or are relevant to monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. The potential of AlGaAs laser technology for free-space optical communications systems is demonstrated. These solid-state components, which can generate and modulate light, combine the power of a number of sources and perform at least part of the beam pointing functions. Methods are proposed for overcoming the main drawback of semiconductor lasers, that is, their inability to emit the needed amount of optical power in a single-mode operation.

  5. Wavelength-resonant surface-emitting semiconductor laser

    DOEpatents

    Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

    1989-01-01

    A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

  6. Diluted magnetic semiconductors

    NASA Astrophysics Data System (ADS)

    Anderson, James R.

    1990-03-01

    Growth and physical properties of diluted magnetic semiconductors (DMS) were investigated. Growth included Bridgman, solid state recrystallization, and liquid phase epitaxy of Mercury(1-x)Manganese(x)Telluride and Mercury(1-x-y)Manganese(x)Cadmium(y)Telluride. Very uniform crystals were produced by solid state recrystallization. Physical properties studied included magnetization, optical response, and magnetotransport. From magnetization, the exchange interactions among magnetic ions have been deduced. Modulated spectroscopy gave details of the electronic structure of DMS and the quality of the material was indicated by the line widths. Magnetotransport, carried out in some cases to 30 T, showed a large negative magnetoresistance and subsequent increase. The Hg(1-x-y)Mn(x)Cd(y)Te has considerable promise for avalanche photodiodes between 1.2 and 1.8 micrometers.

  7. Semiconductor nanowire lasers

    NASA Astrophysics Data System (ADS)

    Eaton, Samuel W.; Fu, Anthony; Wong, Andrew B.; Ning, Cun-Zheng; Yang, Peidong

    2016-06-01

    The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the development of nanowire lasers and offer our perspective on future improvements and trends. We discuss fundamental material considerations and the latest, most effective materials for nanowire lasers. A discussion of novel cavity designs and amplification methods is followed by some of the latest work on surface plasmon polariton nanowire lasers. Finally, exciting new reports of electrically pumped nanowire lasers with the potential for integrated optoelectronic applications are described.

  8. Multistability, chaos, and random signal generation in semiconductor superlattices.

    PubMed

    Ying, Lei; Huang, Danhong; Lai, Ying-Cheng

    2016-06-01

    Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot be readily realized using conventional radiation sources, the so-called THz gap. Efforts in the past three decades have demonstrated various nonlinear dynamical behaviors including chaos, suggesting the potential to exploit chaos in semiconductor superlattices as random signal sources (e.g., random number generators) in the THz frequency range. We consider a realistic model of hot electrons in semiconductor superlattice, taking into account the induced space charge field. Through a systematic exploration of the phase space we find that, when the system is subject to an external electrical driving of a single frequency, chaos is typically associated with the occurrence of multistability. That is, for a given parameter setting, while there are initial conditions that lead to chaotic trajectories, simultaneously there are other initial conditions that lead to regular motions. Transition to multistability, i.e., the emergence of multistability with chaos as a system parameter passes through a critical point, is found and argued to be abrupt. Multistability thus presents an obstacle to utilizing the superlattice system as a reliable and robust random signal source. However, we demonstrate that, when an additional driving field of incommensurate frequency is applied, multistability can be eliminated, with chaos representing the only possible asymptotic behavior of the system. In such a case, a random initial condition will lead to a trajectory landing in a chaotic attractor with probability 1, making quasiperiodically driven semiconductor superlattices potentially as a reliable

  9. Multistability, chaos, and random signal generation in semiconductor superlattices.

    PubMed

    Ying, Lei; Huang, Danhong; Lai, Ying-Cheng

    2016-06-01

    Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot be readily realized using conventional radiation sources, the so-called THz gap. Efforts in the past three decades have demonstrated various nonlinear dynamical behaviors including chaos, suggesting the potential to exploit chaos in semiconductor superlattices as random signal sources (e.g., random number generators) in the THz frequency range. We consider a realistic model of hot electrons in semiconductor superlattice, taking into account the induced space charge field. Through a systematic exploration of the phase space we find that, when the system is subject to an external electrical driving of a single frequency, chaos is typically associated with the occurrence of multistability. That is, for a given parameter setting, while there are initial conditions that lead to chaotic trajectories, simultaneously there are other initial conditions that lead to regular motions. Transition to multistability, i.e., the emergence of multistability with chaos as a system parameter passes through a critical point, is found and argued to be abrupt. Multistability thus presents an obstacle to utilizing the superlattice system as a reliable and robust random signal source. However, we demonstrate that, when an additional driving field of incommensurate frequency is applied, multistability can be eliminated, with chaos representing the only possible asymptotic behavior of the system. In such a case, a random initial condition will lead to a trajectory landing in a chaotic attractor with probability 1, making quasiperiodically driven semiconductor superlattices potentially as a reliable

  10. Multistability, chaos, and random signal generation in semiconductor superlattices

    NASA Astrophysics Data System (ADS)

    Ying, Lei; Huang, Danhong; Lai, Ying-Cheng

    2016-06-01

    Historically, semiconductor superlattices, artificial periodic structures of different semiconductor materials, were invented with the purpose of engineering or manipulating the electronic properties of semiconductor devices. A key application lies in generating radiation sources, amplifiers, and detectors in the "unusual" spectral range of subterahertz and terahertz (0.1-10 THz), which cannot be readily realized using conventional radiation sources, the so-called THz gap. Efforts in the past three decades have demonstrated various nonlinear dynamical behaviors including chaos, suggesting the potential to exploit chaos in semiconductor superlattices as random signal sources (e.g., random number generators) in the THz frequency range. We consider a realistic model of hot electrons in semiconductor superlattice, taking into account the induced space charge field. Through a systematic exploration of the phase space we find that, when the system is subject to an external electrical driving of a single frequency, chaos is typically associated with the occurrence of multistability. That is, for a given parameter setting, while there are initial conditions that lead to chaotic trajectories, simultaneously there are other initial conditions that lead to regular motions. Transition to multistability, i.e., the emergence of multistability with chaos as a system parameter passes through a critical point, is found and argued to be abrupt. Multistability thus presents an obstacle to utilizing the superlattice system as a reliable and robust random signal source. However, we demonstrate that, when an additional driving field of incommensurate frequency is applied, multistability can be eliminated, with chaos representing the only possible asymptotic behavior of the system. In such a case, a random initial condition will lead to a trajectory landing in a chaotic attractor with probability 1, making quasiperiodically driven semiconductor superlattices potentially as a reliable

  11. Overview: Hard Rock Penetration

    SciTech Connect

    Dunn, J.C.

    1992-01-01

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  12. Overview: Hard Rock Penetration

    SciTech Connect

    Dunn, J.C.

    1992-08-01

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  13. Overview - Hard Rock Penetration

    SciTech Connect

    Dunn, James C.

    1992-03-24

    The Hard Rock Penetration program is developing technology to reduce the costs of drilling and completing geothermal wells. Current projects include: lost circulation control, rock penetration mechanics, instrumentation, and industry/DOE cost shared projects of the Geothermal Drilling Organization. Last year, a number of accomplishments were achieved in each of these areas. A new flow meter being developed to accurately measure drilling fluid outflow was tested extensively during Long Valley drilling. Results show that this meter is rugged, reliable, and can provide useful measurements of small differences in fluid inflow and outflow rates. By providing early indications of fluid gain or loss, improved control of blow-out and lost circulation problems during geothermal drilling can be expected. In the area of downhole tools for lost circulation control, the concept of a downhole injector for injecting a two-component, fast-setting cementitious mud was developed. DOE filed a patent application for this concept during FY 91. The design criteria for a high-temperature potassium, uranium, thorium logging tool featuring a downhole data storage computer were established, and a request for proposals was submitted to tool development companies. The fundamental theory of acoustic telemetry in drill strings was significantly advanced through field experimentation and analysis. A new understanding of energy loss mechanisms was developed.

  14. High-resolution X-ray imaging—a powerful nondestructive technique for applications in semiconductor industry

    NASA Astrophysics Data System (ADS)

    Zschech, Ehrenfried; Yun, Wenbing; Schneider, Gerd

    2008-08-01

    The availability of high-brilliance X-ray sources, high-precision X-ray focusing optics and very efficient CCD area detectors has contributed essentially to the development of transmission X-ray microscopy (TXM) and X-ray computed tomography (XCT) with sub-50 nm resolution. Particularly, the fabrication of high aspect ratio Fresnel zone plates with zone widths approaching 15 nm has contributed to the enormous improvement in spatial resolution during the previous years. Currently, Fresnel zone plates give the ability to reach spatial resolutions of 15 to 20 nm in the soft and of about 30 to 50 nm in the hard X-ray energy range. X-ray microscopes with rotating anode X-ray sources that can be installed in an analytical lab next to a semiconductor fab have been developed recently. These unique TXM/XCT systems provide an important new capability of nondestructive 3D imaging of internal circuit structures without destructive sample preparation such as cross sectioning. These lab systems can be used for failure localization in micro- and nanoelectronic structures and devices, e.g., to visualize voids and residuals in on-chip metal interconnects without physical modification of the chip. Synchrotron radiation experiments have been used to study new processes and materials that have to be introduced into the semiconductor industry. The potential of TXM using synchrotron radiation in the soft X-ray energy range is shown for the nondestructive in situ imaging of void evolution in embedded on-chip copper interconnect structures during electromigration and for the imaging of different types of insulating thin films between the on-chip interconnects (spectromicroscopy).

  15. Hard and soft spectral states of ULXs

    NASA Astrophysics Data System (ADS)

    Soria, R.

    2011-05-01

    I discuss some differences between the observed spectral states of ultraluminous X-ray sources (ULXs) and the canonical scheme of spectral states defined in Galactic black holes. The standard interpretation of ULXs with a curved spectrum, or a moderately steep power-law with soft excess and high-energy downturn, is that they are an extension of the very high state, up to luminosities {≈ 1}-3 L_Edd. Two competing models are Comptonization in a warm corona, and slim disk; I suggest bulk motion Comptonization in the radiatively-driven outflow as another possibility. The interpretation of ULXs with a hard power-law spectrum is more problematic. Some of them remain in that state over a large range of luminosities; others switch directly to a curved state without going through a canonical high/soft state. I suggest that those ULXs are in a high/hard state not seen in Galactic black holes; that state may overlap with the low/hard state at lower accretion rates, and extend all the way to Eddington accretion rates. If some black holes can reach Eddington accretion rates without switching to a standard-disk-dominated state, it is also possible that they never quench their steady jets.

  16. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A.-B.; Miller, W. E.

    1988-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys InPBi, InAsBi, and InSbBi were studied theoretically. Bond energies, bond lengths, and strain coefficients were calculated for pure AlBi, GaBi, and InBi compounds and their alloys, and predictions were made for the mixing enthalpies, miscibility gaps, and critical metastable-to-stable material transition temperatures. Miscibility calculations indicate that InSbBi will be the most miscible, and the InPBi will be the the most difficult to mix. However, calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys and substantially harder than the currently favored narrow-gap semiconductor HgCdTe.

  17. Nanomechanics of hard films on compliant substrates.

    SciTech Connect

    Reedy, Earl David, Jr.; Emerson, John Allen; Bahr, David F.; Moody, Neville Reid; Zhou, Xiao Wang; Hales, Lucas; Adams, David Price; Yeager,John; Nyugen, Thao D.; Corona, Edmundo; Kennedy, Marian S.; Cordill, Megan J.

    2009-09-01

    Development of flexible thin film systems for biomedical, homeland security and environmental sensing applications has increased dramatically in recent years [1,2,3,4]. These systems typically combine traditional semiconductor technology with new flexible substrates, allowing for both the high electron mobility of semiconductors and the flexibility of polymers. The devices have the ability to be easily integrated into components and show promise for advanced design concepts, ranging from innovative microelectronics to MEMS and NEMS devices. These devices often contain layers of thin polymer, ceramic and metallic films where differing properties can lead to large residual stresses [5]. As long as the films remain substrate-bonded, they may deform far beyond their freestanding counterpart. Once debonded, substrate constraint disappears leading to film failure where compressive stresses can lead to wrinkling, delamination, and buckling [6,7,8] while tensile stresses can lead to film fracture and decohesion [9,10,11]. In all cases, performance depends on film adhesion. Experimentally it is difficult to measure adhesion. It is often studied using tape [12], pull off [13,14,15], and peel tests [16,17]. More recent techniques for measuring adhesion include scratch testing [18,19,20,21], four point bending [22,23,24], indentation [25,26,27], spontaneous blisters [28,29] and stressed overlayers [7,26,30,31,32,33]. Nevertheless, sample design and test techniques must be tailored for each system. There is a large body of elastic thin film fracture and elastic contact mechanics solutions for elastic films on rigid substrates in the published literature [5,7,34,35,36]. More recent work has extended these solutions to films on compliant substrates and show that increasing compliance markedly changes fracture energies compared with rigid elastic solution results [37,38]. However, the introduction of inelastic substrate response significantly complicates the problem [10,39,40]. As

  18. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  19. Measuring the Hardness of Minerals

    ERIC Educational Resources Information Center

    Bushby, Jessica

    2005-01-01

    The author discusses Moh's hardness scale, a comparative scale for minerals, whereby the softest mineral (talc) is placed at 1 and the hardest mineral (diamond) is placed at 10, with all other minerals ordered in between, according to their hardness. Development history of the scale is outlined, as well as a description of how the scale is used…

  20. Non-Hodgkin's lymphoma of the hard palate.

    PubMed

    Jayakrishnan, R; Thomas, Gigi; Kumar, Aswin; Nair, Rekha A; Mathews, Susan

    2011-10-01

    Non-Hodgkin's lymphoma usually involves lymph nodes, but can involve extranodal sites. Oral lymphomas are relatively rare and often difficult to diagnose in a clinical setting. A case of non-Hodgkin's lymphoma of the hard palate who had undergone external beam radiation therapy and was found to be well one year following treatment is reported. PMID:22482326

  1. Hardness Assurance Techniques for New Generation COTS Devices

    NASA Technical Reports Server (NTRS)

    Lee, C. I.; Rax, B. G.; Johnston, A. H.

    1996-01-01

    Hardness Assurance (HA) techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed significant degradation at HDR, not at low dose rate environment. New generation low-power op amps showed more degradation at low voltage applications. HA test techniques for COTS devices are presented in this paper.

  2. RHOBOT: Radiation hardened robotics

    SciTech Connect

    Bennett, P.C.; Posey, L.D.

    1997-10-01

    A survey of robotic applications in radioactive environments has been conducted, and analysis of robotic system components and their response to the varying types and strengths of radiation has been completed. Two specific robotic systems for accident recovery and nuclear fuel movement have been analyzed in detail for radiation hardness. Finally, a general design approach for radiation-hardened robotics systems has been developed and is presented. This report completes this project which was funded under the Laboratory Directed Research and Development program.

  3. Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material

    SciTech Connect

    Sopori, Bhushan; Rangappan, Anikara

    2014-11-25

    Systems and methods for semiconductor device PN junction fabrication are provided. In one embodiment, a method for fabricating an electrical device having a P-N junction comprises: depositing a layer of amorphous semiconductor material onto a crystalline semiconductor base, wherein the crystalline semiconductor base comprises a crystalline phase of a same semiconductor as the amorphous layer; and growing the layer of amorphous semiconductor material into a layer of crystalline semiconductor material that is epitaxially matched to the lattice structure of the crystalline semiconductor base by applying an optical energy that penetrates at least the amorphous semiconductor material.

  4. State of the art in semiconductor detectors

    SciTech Connect

    Rehak, P. ); Gatti, E. )

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs.

  5. Radiation hardened microprocessor for small payloads

    NASA Technical Reports Server (NTRS)

    Shah, Ravi

    1993-01-01

    The RH-3000 program is developing a rad-hard space qualified 32-bit MIPS R-3000 RISC processor under the Naval Research Lab sponsorship. In addition, under IR&D Harris is developing RHC-3000 for embedded control applications where low cost and radiation tolerance are primary concerns. The development program leverages heavily from commercial development of the MIPS R-3000. The commercial R-3000 has a large installed user base and several foundry partners are currently producing a wide variety of R-3000 derivative products. One of the MIPS derivative products, the LR33000 from LSI Logic, was used as the basis for the design of the RH-3000 chipset. The RH-3000 chipset consists of three core chips and two support chips. The core chips include the CPU, which is the R-3000 integer unit and the FPA/MD chip pair, which performs the R-3010 floating point functions. The two support whips contain all the support functions required for fault tolerance support, real-time support, memory management, timers, and other functions. The Harris development effort had first passed silicon success in June, 1992 with the first rad-hard 32-bit RH-3000 CPU chip. The CPU device is 30 kgates, has a 508 mil by 503 mil die size and is fabricated at Harris Semiconductor on the rad-hard CMOS Silicon on Sapphire (SOS) process. The CPU device successfully passed tesing against 600,000 test vectors derived directly on the LSI/MIPS test suite and has been operational as a single board computer running C code for the past year. In addition, the RH-3000 program has developed the methodology for converting commercially developed designs utilizing logic synthesis techniques based on a combination of VHDK and schematic data bases.

  6. Aging and Radiation Effects in Stockpile Electronics

    SciTech Connect

    Hartman, E.F.

    1999-03-25

    It is likely that aging is affecting the radiation hardness of stockpile electronics, and we have seen apparent examples of aging that affects the electronic radiation hardness. It is also possible that low-level intrinsic radiation that is inherent during stockpile life will damage or in a sense age electronic components. Both aging and low level radiation effects on radiation hardness and stockpile reliability need to be further investigated by using both test and modeling strategies that include appropriate testing of electronic components withdrawn from the stockpile.

  7. Medipix2/USB Portable Radiation Camera

    SciTech Connect

    Vykydal, Z.; Holy, T.; Jakubek, J.; Platkevic, M.; Pospisil, S.

    2007-11-26

    Advances in the field of semiconductor technologies in the last years make possible to develop new types of ionizing radiation detectors. The Medipix2 readout ASIC is an example of such a device. It is the hybrid single photon counting imaging chip (sensor and readout chips are fabricated separately). With an appropriate sensor chip on the top, it can count single X-ray photons, without any noise or dark current, at high fluxes (several Gigaphotons per cm{sup 2} per second). It also offers excellent radiation hardness and good position resolution (256x256 pixels, each pixel has a 55x55 {mu}m{sup 2} area). To make the Medipix2 imaging chip more portable for specific applications a microprocessor controlled read-out system based on the USB (Universal Serial Bus) interface has been developed. It integrates all necessary detector support into one compact device (75x46 mm{sup 2}). All power supplies including sensor bias (up to 100 V) are internally derived from the voltage provided by the USB connection.

  8. Signal processing for semiconductor detectors

    SciTech Connect

    Goulding, F.S.; Landis, D.A.

    1982-02-01

    A balanced perspective is provided on the processing of signals produced by semiconductor detectors. The general problems of pulse shaping to optimize resolution with constraints imposed by noise, counting rate and rise time fluctuations are discussed.

  9. Artificial atoms on semiconductor surfaces

    PubMed Central

    Tisdale, W. A.; Zhu, X.-Y.

    2011-01-01

    Semiconductor nanocrystals are called artificial atoms because of their atom-like discrete electronic structure resulting from quantum confinement. Artificial atoms can also be assembled into artificial molecules or solids, thus, extending the toolbox for material design. We address the interaction of artificial atoms with bulk semiconductor surfaces. These interfaces are model systems for understanding the coupling between localized and delocalized electronic structures. In many perceived applications, such as nanoelectronics, optoelectronics, and solar energy conversion, interfacing semiconductor nanocrystals to bulk materials is a key ingredient. Here, we apply the well established theories of chemisorption and interfacial electron transfer as conceptual frameworks for understanding the adsorption of semiconductor nanocrystals on surfaces, paying particular attention to instances when the nonadiabatic Marcus picture breaks down. We illustrate these issues using recent examples from our laboratory. PMID:21097704

  10. Semiconductor technology program. Progress briefs

    NASA Technical Reports Server (NTRS)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  11. Pt-Ti-O gate silicon-metal-insulator-semiconductor field-effect transistor hydrogen gas sensors in harsh environments

    NASA Astrophysics Data System (ADS)

    Usagawa, Toshiyuki; Ueda, Kazuhiro; Nambu, Akira; Yoneyama, Akio; Kikuchi, Yota; Watanabe, Atsushi

    2016-06-01

    The influence of radiation damages to developed hydrogen gas sensor chips from γ-rays (60Co) and/or X-rays (synchrotron radiation) is manageably avoided for sensor operations even at extremely high integral doses such as 1.8 and/or 18 MGy. Platinum-titanium-oxygen (Pt-Ti-O) gate silicon-metal-insulator-semiconductor field-effect transistor (Si-MISFET) hydrogen gas sensors can work stably as hydrogen sensors up to about 270 °C and also show environmental hardness as follows: When nitrogen-diluted 10-ppm hexamethyldisiloxane (HMDS) was exposed to the sensor FETs for 40 min at a working temperature of 115 °C, large sensing amplitude (ΔV g) changed little within repetition errors before and after HMDS exposures. The variations of ΔV g among relative humidity of 20 and 80% are very small within ±4.4% around 50% under 40 °C atmosphere. The Pt-Ti-O sensors have been found to show large ΔV g of 624.4 mV with σΔV g of 7.27 mV for nine times repeated measurements under nitrogen-diluted 1.0%-hydrogen gas, which are nearly the same values of 654.5 mV with σΔV g of 3.77 mV under air-diluted 1.0%-hydrogen gas.

  12. Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals

    SciTech Connect

    Brenny, B. J. M.; Coenen, T.; Polman, A.

    2014-06-28

    We present a method to separate coherent and incoherent contributions to cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence spectroscopy. Using 5 and 30 keV electrons, we measure the cathodoluminescence spectra for Si, GaAs, Al, Ag, Au, and Cu and determine the angular emission distributions for Al, GaAs, and Si. Aluminium shows a clear dipolar radiation profile due to coherent transition radiation, while GaAs shows incoherent luminescence characterized by a Lambertian angular distribution. Silicon shows both transition radiation and incoherent radiation. From the angular data, we determine the ratio between the two processes and decompose their spectra. This method provides a powerful way to separate different radiative cathodoluminescence processes, which is useful for material characterization and in studies of electron- and light-matter interaction in metals and semiconductors.

  13. Medical applications of semiconductor lasers

    NASA Astrophysics Data System (ADS)

    Mancha, Sylvia D.; Keipert, Andreas; Prairie, Michael W.

    1994-06-01

    The High Power Semiconductor Laser Technology (HPSLT) program is currently developing, in-house, a belt pack medical laser. This compact semiconductor laser device provides the field paramedic or physician a unique portable laser capability. The pack consists of a completely self-contained laser system that fits inside a belt pack. Several other medical applications being investigated by the HPSLT program include urological applications, photodynamic therapy, and ophthalmic applications.

  14. Dye Sensitization of Semiconductor Particles

    SciTech Connect

    Hartland, G. V.

    2003-01-13

    In this project electron transfer at semiconductor liquid interfaces was examined by ultrafast time-resolved and steady-state optical techniques. The experiments primarily yielded information about the electron transfer from titanium dioxide semiconductor particles to absorbed molecules. The results show that the rate of electron transfer depends on the structure of the molecule, and the crystalline phase of the particle. These results can be qualitatively explained by Marcus theory for electron transfer.

  15. Electrostatic enhancement of light emitted by semiconductor quantum well

    NASA Astrophysics Data System (ADS)

    Krokhin, A.; Neogi, A.; Llopis, A.; Mahat, M.; Gumen, L.; Pereira, S.; Watson, I.

    2015-10-01

    Carrier dynamics in metal-semiconductor structures is driven by electrodynamic coupling of carriers to the evanescent field of surface plasmons. Useful modifications in electron and hole dynamics due to presence of metallic inclusions show promise for applications from light emitters to communications. However, this picture does not include contributions from electrostatics. We propose here an electrostatic mechanism for enhancement of light radiated from semiconductor emitter which is comparable in effect to plasmonic mechanism. Arising from Coulomb attraction of e-h pairs to their electrostatic images in metallic nanoparticles, this mechanism produces large carrier concentrations near the nanoparticle. A strong inhomogeneity in the carrier distribution and an increase in the internal quantum efficiency are predicted. In our experiments, this manifests as emission enhancement in InGaN quantum well (QW) radiating in the near-UV region. This fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.

  16. [A clinical observation of pericoronitis treatment with pulse semiconductor laser].

    PubMed

    Lu, Shan; Fang, Yuan

    2004-08-01

    In order to valuate the effect of pericoronitis treated with pulse semiconductor laser. As a treatment group, 24 ones drawn ramdomly from 48 cases of pericoronitis were given periodontal radiation, point-radiation therapy and pharmacotherapy as well. While another 24 cases as a contrast group were given pharmacotherapy only. On the 3rd day and the 5th day the degree of pain and restriction of mouth opening of the two groups were graded, contrasted and processed by Ridit statistics. Result, The therapy group gained more notable effect in pain-relieving and mouth-opening-improving than the contrast group. Because of no damage, handy and can be done easily, be definite in curative effect, Pulse semiconductor laser treatment pericoronitis deserves popularizing.

  17. Survey of cryogenic semiconductor devices

    SciTech Connect

    Talarico, L.J.; McKeever, J.W.

    1996-04-01

    Improved reliability and electronic performance can be achieved in a system operated at cryogenic temperatures because of the reduction in mechanical insult and in disruptive effects of thermal energy on electronic devices. Continuing discoveries of new superconductors with ever increasing values of T{sub c} above that of liquid nitrogen temperature (LNT) have provided incentive for developing semiconductor electronic systems that may also operate in the superconductor`s liquid nitrogen bath. Because of the interest in high-temperature superconductor (HTS) devices, liquid nitrogen is the cryogen of choice and LNT is the temperature on which this review is focused. The purpose of this survey is to locate and assemble published information comparing the room temperature (298 K), performance of commercially available conventional and hybrid semiconductor device with their performance at LNT (77K), to help establish their candidacy as cryogenic electronic devices specifically for use at LNT. The approach to gathering information for this survey included the following activities. Periodicals and proceedings were searched for information on the behavior of semiconductor devices at LNT. Telephone calls were made to representatives of semiconductor industries, to semiconductor subcontractors, to university faculty members prominent for their research in the area of cryogenic semiconductors, and to representatives of the National Aeronautics and Space Administration (NASA) and NASA subcontractors. The sources and contacts are listed with their responses in the introduction, and a list of references appears at the end of the survey.

  18. Simulating nanoscale semiconductor devices.

    SciTech Connect

    Salinger, Andrew Gerhard; Zhao, P.; Woolard, D. L.; Kelley, C. Tim; Lasater, Matthew S.

    2005-03-01

    The next generation of electronic devices will be developed at the nanoscale and molecular level, where quantum mechanical effects are observed. These effects must be accounted for in the design process for such small devices. One prototypical nanoscale semiconductor device under investigation is a resonant tunneling diode (RTD). Scientists are hopeful the quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current oscillations. To simulate the electron transport within the RTD, the Wigner-Poisson equations are used. These equations describe the time evolution of the electrons distribution within the device. In this paper, this model and a parameter study using this model will be presented. The parameter study involves calculating the steady-state current output from the RTD as a function of an applied voltage drop across the RTD and also calculating the stability of that solution. To implement the parameter study, the computational model was connected to LOCA (Library of Continuation Algorithms), a part of Sandia National Laboratories parallel solver project, Trilinos. Numerical results will be presented.

  19. Determining ionizing radiation using sensors based on organic semiconducting material

    SciTech Connect

    Raval, Harshil N.; Tiwari, Shree Prakash; Navan, Ramesh R.; Rao, V. Ramgopal

    2009-03-23

    The use of organic semiconducting material sensors as total dose radiation detectors is proposed, wherein the change in conductivity of an organic material is measured as a function of ionizing radiation dose. The simplest sensor is a resistor made using organic semiconductor. Furthermore, for achieving higher sensitivity, organic field effect transistor (OFET) is used as a sensor. A solution processed organic semiconductor resistor and an OFET were fabricated using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material. The devices are exposed to Cobalt-60 radiation for different total dose values. The changes in electrical characteristics indicate the potential of these devices as radiation sensors.

  20. Compositions of doped, co-doped and tri-doped semiconductor materials

    DOEpatents

    Lynn, Kelvin; Ciampi, Guido

    2011-12-06

    Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

  1. Coated semiconductor devices for neutron detection

    DOEpatents

    Klann, Raymond T.; McGregor, Douglas S.

    2002-01-01

    A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.

  2. Synchronization of semiconductor laser arrays with 2D Bragg structures

    NASA Astrophysics Data System (ADS)

    Baryshev, V. R.; Ginzburg, N. S.

    2016-08-01

    A model of a planar semiconductor multi-channel laser is developed. In this model two-dimensional (2D) Bragg mirror structures are used for synchronizing radiation of multiple laser channels. Coupling of longitudinal and transverse waves can be mentioned as the distinguishing feature of these structures. Synchronization of 20 laser channels is demonstrated with a semi-classical approach based on Maxwell-Bloch equations.

  3. Wide-Bandgap Semiconductors

    SciTech Connect

    Chinthavali, M.S.

    2005-11-22

    With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters

  4. Melting of polydisperse hard disks.

    PubMed

    Pronk, Sander; Frenkel, Daan

    2004-06-01

    The melting of a polydisperse hard-disk system is investigated by Monte Carlo simulations in the semigrand canonical ensemble. This is done in the context of possible continuous melting by a dislocation-unbinding mechanism, as an extension of the two-dimensional hard-disk melting problem. We find that while there is pronounced fractionation in polydispersity, the apparent density-polydispersity gap does not increase in width, contrary to 3D polydisperse hard spheres. The point where the Young's modulus is low enough for the dislocation unbinding to occur moves with the apparent melting point, but stays within the density gap, just like for the monodisperse hard-disk system. Additionally, we find that throughout the accessible polydispersity range, the bound dislocation-pair concentration is high enough to affect the dislocation-unbinding melting as predicted by Kosterlitz, Thouless, Halperin, Nelson, and Young.

  5. Activation of molecular catalysts using semiconductor quantum dots

    DOEpatents

    Meyer, Thomas J.; Sykora, Milan; Klimov, Victor I.

    2011-10-04

    Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

  6. Radiation design criteria handbook. [design criteria for electronic parts applications

    NASA Technical Reports Server (NTRS)

    Stanley, A. G.; Martin, K. E.; Douglas, S.

    1976-01-01

    Radiation design criteria for electronic parts applications in space environments are provided. The data were compiled from the Mariner/Jupiter Saturn 1977 electronic parts radiation test program. Radiation sensitive device types were exposed to radiation environments compatible with the MJS'77 requirements under suitable bias conditions. A total of 189 integrated circuits, transistors, and other semiconductor device types were tested.

  7. MEASUREMENTS OF HIGH-FIELD THZ INDUCED PHOTOCURRENTS IN SEMICONDUCTORS

    SciTech Connect

    Wiczer, M.; Lindenberg, A.

    2008-01-01

    THz pulses have provided a useful tool for probing the time-resolved dynamics of free carriers in a system. However, the development of methods to produce intense THz radiation has been slow. We have developed a method for producing intense ultra-short THz pulses, which have a full width at half maximum of 300 fs — approximately a half cycle of THz radiation. These intense half cycle pulses (HCPs) allowed us to use THz radiation as a source of excitation. By exposing the semiconductor indium antimonide (InSb) to intense THz HCP radiation, we have observed non-linear optical effects which suggest the generation of new free carriers by below band-gap THz photons. This generation of free carriers appears to be due to an avalanche multiplication process which then induces a current in the time-scale of our THz pulse. This amplifi cation on such a short timescale suggests the possibility of an ultrafast detector of weak above band-gap radiation. We constructed a device which detects these currents by painting an electrode structure on the surface of the semiconductor. The currents induced across the electrodes by this avalanche multiplication process were measured and compared with other measurements of this non-linear optical process. We successfully measured THz induced currents in InSb, suggesting promise towards the development of an ultra-fast detector. Further, we have gained insight into a possible physical explanation of the THz induced free carriers we observe in InSb.

  8. Closing photoconductive semiconductor switches

    SciTech Connect

    Loubriel, G.M.; Zutavern, F.J.; Hjalmarson, H.P.; O'Malley, M.W.

    1989-01-01

    One of the most important limitations of Photoconductive Semiconductor Switches (PCSS) for pulsed power applications is the high laser powers required to activate the switches. In this paper, we discuss recent developments on two different aspects of GaAs PCSS that result in reductions in laser power by a factor of nearly 1000. The advantages of using GaAs over Si are many. First of all, the resistivity of GaAs can be orders of magnitude higher than that of the highest resistivity Si material, thus allowing GaAs switches to withstand dc voltages without thermal runaway. Secondly, GaAs has a higher carrier mobility than Si and, thus, is more efficient (per carrier). Finally, GaAs switches can have naturally fast (ns) opening times at room temperature and low fields, microsecond opening times at liquid nitrogen temperature of 77 K, or, on demand, closing and opening at high fields and room temperature by a mechanism called lock-on (see Ref. 1). By contrast, Si switches typically opening times of milliseconds. The amount of laser light required to trigger GaAs for lock-on, or at 77 K, is about three orders of magnitude lower than at room temperature. In this paper we describe the study of lock-on in GaAs and InP, as well as switching of GaAs at 77 K. We shall show that when GaAs is switched at 77 K, the carrier lifetime is about three orders of magnitude longer than it is at room temperature. We shall explain the change in lifetime in terms of the change in electron capture cross section of the deep levels in GaAs (these are defect or impurity levels in the band gap). In the second section, we describe the lock-on effect, now seen in GaAs and InP, and at fields as high as 70 kV/cm. We show how lock-on can be tailored by changing the GaAs temperature or by neutron bombardment. In the third section, we discuss possible lock-on mechanisms. 5 refs., 5 figs.

  9. Recent results on CVD diamond radiation sensors

    NASA Astrophysics Data System (ADS)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  10. Cases Series of Malignant Lymphohematopoietic Disorder in Korean Semiconductor Industry

    PubMed Central

    Lee, Hye-Eun; Ryu, Hyung-Woo; Park, Seung-Hyun; Kang, Seong-Kyu

    2011-01-01

    Objectives Seven cases of malignant lymphohematopoietic (LHP) disorder were claimed to have developed from occupational exposure at two plants of a semiconductor company from 2007 to 2010. This study evaluated the possibility of exposure to carcinogenic agents for the cases. Methods Clinical courses were reviewed with assessing possible exposure to carcinogenic agents related to LHP cancers. Chemicals used at six major semiconductor companies in Korea were reviewed. Airborne monitoring for chemicals, including benzene, was conducted and the ionizing radiation dose was measured from 2008 to 2010. Results The latency of seven cases (five leukemiae, a Non-Hodgkin's lymphoma, and an aplastic anemia) ranged from 16 months to 15 years and 5 months. Most chemical measurements were at levels of less than 10% of the Korean Occupational Exposure Limit value. No carcinogens related to LHP cancers were used or detected. Complete-shielded radiation-generating devices were used, but the ionizing radiation doses were 0.20-0.22 uSv/hr (background level: 0.21 µSv/hr). Airborne benzene was detected at 0.31 ppb when the detection limit was lowered as low as possible. Ethylene oxide and formaldehyde were not found in the cases' processes, while these two were determined to be among the 263 chemicals in the list that was used at the six semiconductor companies at levels lower than 0.1%. Exposures occurring before 2002 could not be assessed because of the lack of information. Conclusion Considering the possibility of exposure to carcinogenic agents, we could not find any convincing evidence for occupational exposure in all investigated cases. However, further study is needed because the semiconductor industry is a newly developing one. PMID:22953195

  11. High mobility emissive organic semiconductor

    PubMed Central

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  12. High mobility emissive organic semiconductor

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-12-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V-1 s-1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m-2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  13. High mobility emissive organic semiconductor.

    PubMed

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm(2) V(-1) s(-1). Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m(-2) and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics.

  14. Organic Semiconductors and its Applications

    NASA Astrophysics Data System (ADS)

    Kamalasanan, M. N.

    2011-10-01

    Organic semiconductors in the form of evaporated or spin coated thin films have many optoelectronic applications in the present electronic industry. They are frequently used in many type of displays, photo detectors, photoconductors for photocopiers and photovoltaic cells. But many p-conjugated molecules and polymer based devices do not provide satisfactory device performance and operational stability. Most of these problems are related to the interfaces they make with other organic materials and electrodes and the low conductivity of the organic layers. The study of organic-metal and organic—organic interfaces as well as electrical doping of organic semiconductors are very important areas of research at present. In this talk, I will be discussing some of the recent advances in this field as well as some of our own results in the area of interface modification and electrical doping of organic semiconductors.

  15. Selenium semiconductor core optical fibers

    SciTech Connect

    Tang, G. W.; Qian, Q. Peng, K. L.; Wen, X.; Zhou, G. X.; Sun, M.; Chen, X. D.; Yang, Z. M.

    2015-02-15

    Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

  16. Structural properties of bismuth-bearing semiconductor alloys

    NASA Technical Reports Server (NTRS)

    Berding, M. A.; Sher, A.; Chen, A. B.

    1986-01-01

    The structural properties of bismuth-bearing III-V semiconductor alloys are addressed. Because the Bi compounds are not known to form zincblende structures, only the anion-substituted alloys InPBi, InAsBi, and InSbBi are considered candidates as narrow-gap semiconductors. Miscibility calculations indicate that InSbBi will be the most miscible, and InPBi, with the large lattice mismatch of the constituents, will be the most difficult to mix. Calculations of the hardness of the Bi compounds indicate that, once formed, the InPBi alloy will be harder than the other Bi alloys, and substantially harder than the currently favored narrow-gap semiconductor HgCdTe. Thus, although InSbBi may be an easier material to prepare, InPBi promises to be a harder material. Growth of the Bi compounds will require high effective growth temperatures, probably attainable only through the use of nonequilibrium energy-assisted epitaxial growth techniques.

  17. A brief history of ... semiconductors

    NASA Astrophysics Data System (ADS)

    Jenkins, Tudor

    2005-09-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival of this successful quantum theory of solids, together with a concentration on the growth of pure silicon and germanium and an understanding of their properties, saw an explosion in activity in semiconductor studies that has continued to this day.

  18. Wide band gap semiconductor templates

    DOEpatents

    Arendt, Paul N.; Stan, Liliana; Jia, Quanxi; DePaula, Raymond F.; Usov, Igor O.

    2010-12-14

    The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

  19. The processing of semiconductor materials

    NASA Technical Reports Server (NTRS)

    1979-01-01

    Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

  20. Magnetic circular dichroism in the hard X-ray range

    NASA Astrophysics Data System (ADS)

    Rogalev, A.; Wilhelm, F.

    2015-12-01

    An overview of X-ray magnetic circular dichroism (XMCD) spectroscopy in the hard X-ray range is presented. A short historical overview shows how this technique has evolved from the early days of X-ray physics to become a workhorse technique in the modern magnetism research As with all X-ray spectroscopies, XMCD has the advantage of being element specific. Interpretation of the spectra based on magneto-optical sum rules can provide unique information about spin and orbital moment carried by absorbing atom in both amplitude and direction, can infer magnetic interactions from element selective magnetization curves, can allow separation of magnetic and non-magnetic components in heterogeneous systems. The review details the technology currently available for XMCD measurements in the hard X-ray range referring to the ESRF beamline ID12 as an example. The strengths of hard X-ray magnetic circular dichroism technique are illustrated with a wide variety of representative examples, such as actinide based ferromagnets, paramagnetism in metals, pure metallic nanoparticles, exchange spring magnets, half metallic ferromagnets, magnetism at interfaces, and dilute magnetic semiconductors. In this way, we aim to encourage researchers from various scientific communities to consider XMCD as a tool to understanding the electronic and magnetic properties of their samples.

  1. Method of preparing nitrogen containing semiconductor material

    DOEpatents

    Barber, Greg D.; Kurtz, Sarah R.

    2004-09-07

    A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.

  2. Method and structure for passivating semiconductor material

    DOEpatents

    Pankove, Jacques I.

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  3. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, Arthur J.

    1987-01-01

    An electrode is disclosed for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode includes a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  4. Semiconductor electrode with improved photostability characteristics

    DOEpatents

    Frank, A.J.

    1985-02-19

    An electrode is described for use in photoelectrochemical cells having an electrolyte which includes an aqueous constituent. The electrode consists of a semiconductor and a hydrophobic film disposed between the semiconductor and the aqueous constituent. The hydrophobic film is adapted to permit charges to pass therethrough while substantially decreasing the activity of the aqueous constituent at the semiconductor surface thereby decreasing the photodegradation of the semiconductor electrode.

  5. Semiconductor devices having a recessed electrode structure

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2015-05-26

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  6. Semiconductor nanocrystal-based phagokinetic tracking

    DOEpatents

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  7. Diode having trenches in a semiconductor region

    DOEpatents

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  8. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2001-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  9. Semiconductor assisted metal deposition for nanolithography applications

    DOEpatents

    Rajh, Tijana; Meshkov, Natalia; Nedelijkovic, Jovan M.; Skubal, Laura R.; Tiede, David M.; Thurnauer, Marion

    2002-01-01

    An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

  10. Radiation-Hardened Solid-State Drive

    NASA Technical Reports Server (NTRS)

    Sheldon, Douglas J.

    2010-01-01

    A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

  11. Hard diffraction in Pythia 8

    NASA Astrophysics Data System (ADS)

    Overgaard Rasmussen, Christine

    2016-07-01

    We present an overview of the options for diffraction implemented in the general-purpose event generator Pythia 8 [1]. We review the existing model for soft diffraction and present a new model for hard diffraction. Both models use the Pomeron approach pioneered by Ingelman and Schlein, factorising the diffractive cross section into a Pomeron flux and a Pomeron PDF, with several choices for both implemented in Pythia 8. The model of hard diffraction is implemented as a part of the multiparton interactions (MPI) framework, thus introducing a dynamical gap survival probability that explicitly breaks factorisation.

  12. Hardness of ion implanted ceramics

    SciTech Connect

    Oliver, W.C.; McHargue, C.J.; Farlow, G.C.; White, C.W.

    1985-01-01

    It has been established that the wear behavior of ceramic materials can be modified through ion implantation. Studies have been done to characterize the effect of implantation on the structure and composition of ceramic surfaces. To understand how these changes affect the wear properties of the ceramic, other mechanical properties must be measured. To accomplish this, a commercially available ultra low load hardness tester has been used to characterize Al/sub 2/O/sub 3/ with different implanted species and doses. The hardness of the base material is compared with the highly damaged crystalline state as well as the amorphous material.

  13. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    NASA Technical Reports Server (NTRS)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; Chen, Yuan

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  14. Semiconductor films on flexible iridium substrates

    DOEpatents

    Goyal, Amit

    2005-03-29

    A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

  15. Neutron radiation induced degradation of diode characteristics

    NASA Astrophysics Data System (ADS)

    Khanna, S. M.; Pepper, G. T.; Stone, R. E.

    1992-12-01

    Neutron radiation effects on diode current-voltage characteristics have been studied for a variety of diode over 1(10)(exp 13) - 3(10)(exp 15) n/sq cm 1 MeV equivalent neutron fluence range. A classification scheme consisting of three types of neutron effects on diode forward characteristics is proposed here for the first time. For constant forward current I(sub F) higher than that in the generation-recombination regime, the diode voltage V(sub F) either increases with fluence phi (Type 1 diode), on V(sub F) first decreases with phi at lower fluence levels and then increases with phi at higher fluence levels (Type 2 diode), or V(sub F) decreases with phi at all fluence levels used in this work (Type 3 diode). Most of the previous results on p-n junction diodes correspond to Type 1 diode results. Type 2 diode results are rather rare in the literature. Several examples of Type 2 diode results are presented here. Type 3 diode results are reported here for other types of diodes not reported earlier. These results are explained qualitatively in terms of the theories for a p-n junction and for radiation effects on semiconductors. It is shown here that a type 3 diode could be developed as a high neutron fluence monitor with three orders of magnitude higher upper limit than the Harshaw p-i-n diode neutron fluence monitor under evaluation at the US Army Aberdeen Proving Grounds, Aberdeen, Md. The results also suggest a methodology for radiation hard diode development.

  16. Exposure and control assessment of semiconductor manufacturing

    NASA Astrophysics Data System (ADS)

    Jones, James H.

    1988-07-01

    From 1980 to 1984, the National Institute for Occupational Safety and Health (NIOSH), along with the U.S. Environmental Protection Agency (EPA), sponsored a study of worker exposures and controls in semiconductor manufacturing. The study was conducted by Battelle Columbus Laboratories and PEDCO Environmental. Walk-through surveys were conducted at 21 plants and in-depth studies were done at four of these plants. Processes studied included photolithography, chemical vapor deposition, wet chemical etching and cleaning, plasma etching, diffusion, ion implantation, and metallization. Air samples were collected for acetone, antimony, arsenic, boron, n-butyl acetate, diborane, 2-ethoxyethyl acetate, hexamethyldisilizane, hydrogen chloride, hydrogen fluoride, 2-methoxyethanol, methyl ethyl ketone, nitric acid, phosphorus, sulfuric acid, and xylene. In addition, radio-frequency and ionizing radiation were monitored and ventilation measured. In general, results were well below recommended standards for routine operations. One exception was radio-frequency radiation where there was the potential for overexposure in several instances. Worker exposures during maintenance operations and process upset conditions were not able to be evaluated.

  17. High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology

    NASA Astrophysics Data System (ADS)

    Wang, Jingwei; Kang, Lijun; Zhang, Pu; Nie, Zhiqiang; Li, Xiaoning; Xiong, Lingling; Liu, Xingsheng

    2012-03-01

    High power semiconductor laser arrays have found increased applications in many fields. In this work, a hard soldering microchannel cooler (HSMCC) technology was developed for packaging high power diode laser array. Numerical simulations of the thermal behavior characteristics of hard solder and indium solder MCC-packaged diode lasers were conducted and analyzed. Based on the simulated results, a series of high power HSMCC packaged diode laser arrays were fabricated and characterized. The test and statistical results indicated that under the same output power the HSMCC packaged laser bar has lower smile and high reliability in comparison with the conventional copper MCC packaged laser bar using indium soldering technology.

  18. A Brief History of ... Semiconductors

    ERIC Educational Resources Information Center

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  19. Hydroplane polishing of semiconductor crystals

    NASA Astrophysics Data System (ADS)

    Gormley, J. V.; Manfra, M. J.; Calawa, A. R.

    1981-08-01

    A new technique for obtaining optically flat, damage-free surfaces on semiconductor crystals has been developed. The polishing is very fast, being capable of removing over 30 μm of materials per minute in the case of GaAs and InP. Initial results indicate that the technique can also be used in the polishing of HgCdTe.

  20. 2010 Defects in Semiconductors GRC

    SciTech Connect

    Shengbai Zhang

    2011-01-06

    Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp{sup 2} carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.