Sample records for random resistor network

  1. Critical exponents for diluted resistor networks

    NASA Astrophysics Data System (ADS)

    Stenull, O.; Janssen, H. K.; Oerding, K.

    1999-05-01

    An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent φ up to second order in ɛ=6-d, where d is the spatial dimension. Our result φ=1+ɛ/42+4ɛ2/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

  2. A random access memory immune to single event upset using a T-Resistor

    DOEpatents

    Ochoa, A. Jr.

    1987-10-28

    In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

  3. Random access memory immune to single event upset using a T-resistor

    DOEpatents

    Ochoa, Jr., Agustin

    1989-01-01

    In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

  4. Random Resistor Network Model of Minimal Conductivity in Graphene

    NASA Astrophysics Data System (ADS)

    Cheianov, Vadim V.; Fal'Ko, Vladimir I.; Altshuler, Boris L.; Aleiner, Igor L.

    2007-10-01

    Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

  5. Potts-model formulation of the random resistor network

    NASA Astrophysics Data System (ADS)

    Harris, A. B.; Lubensky, T. C.

    1987-05-01

    The randomly diluted resistor network is formulated in terms of an n-replicated s-state Potts model with a spin-spin coupling constant J in the limit when first n, then s, and finally 1/J go to zero. This limit is discussed and to leading order in 1/J the generalized susceptibility is shown to reproduce the results of the accompanying paper where the resistor network is treated using the xy model. This Potts Hamiltonian is converted into a field theory by the usual Hubbard-Stratonovich transformation and thereby a renormalization-group treatment is developed to obtain the corrections to the critical exponents to first order in ɛ=6-d, where d is the spatial dimensionality. The recursion relations are shown to be the same as for the xy model. Their detailed analysis (given in the accompanying paper) gives the resistance crossover exponent as φ1=1+ɛ/42, and determines the critical exponent, t for the conductivity of the randomly diluted resistor network at concentrations, p, just above the percolation threshold: t=(d-2)ν+φ1, where ν is the critical exponent for the correlation length at the percolation threshold. These results correct previously accepted results giving φ=1 to all orders in ɛ. The new result for φ1 removes the paradox associated with the numerical result that t>1 for d=2, and also shows that the Alexander-Orbach conjecture, while numerically quite accurate, is not exact, since it disagrees with the ɛ expansion.

  6. Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

    PubMed

    Hamou, R F; Macdonald, J R; Tuncer, E

    2009-01-14

    How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of them. In addition, such fits surprisingly led to cutoff parameters, including a primitive relaxation or crossover time, with estimated values comparable to those found for real dispersive materials.

  7. Tunneling Conductivity and Piezoresistivity of Composites Containing Randomly Dispersed Conductive Nano-Platelets

    PubMed Central

    Oskouyi, Amirhossein Biabangard; Sundararaj, Uttandaraman; Mertiny, Pierre

    2014-01-01

    In this study, a three-dimensional continuum percolation model was developed based on a Monte Carlo simulation approach to investigate the percolation behavior of an electrically insulating matrix reinforced with conductive nano-platelet fillers. The conductivity behavior of composites rendered conductive by randomly dispersed conductive platelets was modeled by developing a three-dimensional finite element resistor network. Parameters related to the percolation threshold and a power-low describing the conductivity behavior were determined. The piezoresistivity behavior of conductive composites was studied employing a reoriented resistor network emulating a conductive composite subjected to mechanical strain. The effects of the governing parameters, i.e., electron tunneling distance, conductive particle aspect ratio and size effects on conductivity behavior were examined. PMID:28788580

  8. Metal-superconductor transition in low-dimensional superconducting clusters embedded in two-dimensional electron systems

    NASA Astrophysics Data System (ADS)

    Bucheli, D.; Caprara, S.; Castellani, C.; Grilli, M.

    2013-02-01

    Motivated by recent experimental data on thin film superconductors and oxide interfaces, we propose a random-resistor network apt to describe the occurrence of a metal-superconductor transition in a two-dimensional electron system with disorder on the mesoscopic scale. We consider low-dimensional (e.g. filamentary) structures of a superconducting cluster embedded in the two-dimensional network and we explore the separate effects and the interplay of the superconducting structure and of the statistical distribution of local critical temperatures. The thermal evolution of the resistivity is determined by a numerical calculation of the random-resistor network and, for comparison, a mean-field approach called effective medium theory (EMT). Our calculations reveal the relevance of the distribution of critical temperatures for clusters with low connectivity. In addition, we show that the presence of spatial correlations requires a modification of standard EMT to give qualitative agreement with the numerical results. Applying the present approach to an LaTiO3/SrTiO3 oxide interface, we find that the measured resistivity curves are compatible with a network of spatially dense but loosely connected superconducting islands.

  9. Electronic shot noise in fractal conductors.

    PubMed

    Groth, C W; Tworzydło, J; Beenakker, C W J

    2008-05-02

    By solving a master equation in the Sierpiński lattice and in a planar random-resistor network, we determine the scaling with size L of the shot noise power P due to elastic scattering in a fractal conductor. We find a power-law scaling P proportional, variantL;{d_{f}-2-alpha}, with an exponent depending on the fractal dimension d_{f} and the anomalous diffusion exponent alpha. This is the same scaling as the time-averaged current I[over ], which implies that the Fano factor F=P/2eI[over ] is scale-independent. We obtain a value of F=1/3 for anomalous diffusion that is the same as for normal diffusion, even if there is no smallest length scale below which the normal diffusion equation holds. The fact that F remains fixed at 1/3 as one crosses the percolation threshold in a random-resistor network may explain recent measurements of a doping-independent Fano factor in a graphene flake.

  10. Process for forming synapses in neural networks and resistor therefor

    DOEpatents

    Fu, C.Y.

    1996-07-23

    Customizable neural network in which one or more resistors form each synapse is disclosed. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength. 5 figs.

  11. Process for forming synapses in neural networks and resistor therefor

    DOEpatents

    Fu, Chi Y.

    1996-01-01

    Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

  12. A study of the electrical properties of complex resistor network based on NW model

    NASA Astrophysics Data System (ADS)

    Chang, Yunfeng; Li, Yunting; Yang, Liu; Guo, Lu; Liu, Gaochao

    2015-04-01

    The power and resistance of two-port complex resistor network based on NW small world network model are studied in this paper. Mainly, we study the dependence of the network power and resistance on the degree of port vertices, the connection probability and the shortest distance. Qualitative analysis and a simplified formula for network resistance are given out. Finally, we define a branching parameter and give out its physical meaning in the analysis of complex resistor network.

  13. Randomly diluted xy and resistor networks near the percolation threshold

    NASA Astrophysics Data System (ADS)

    Harris, A. B.; Lubensky, T. C.

    1987-05-01

    A formulation based on that of Stephen for randomly diluted systems near the percolation threshold is analyzed in detail. By careful consideration of various limiting procedures, a treatment of xy spin models and resistor networks is given which shows that previous calculations (which indicate that these systems having continuous symmetry have the same crossover exponents as the Ising model) are in error. By studying the limit wherein the energy gap goes to zero, we exhibit the mathematical mechanism which leads to qualitatively different results for xy-like as contrasted to Ising-like systems. A distinctive feature of the results is that there is an infinite sequence of crossover exponents needed to completely describe the probability distribution for R(x,x'), the resistance between sites x and x'. Because of the difference in symmetry between the xy model and the resistor network, the former has an infinite sequence of crossover exponents in addition to those of the resistor network. The first crossover exponent φ1=1+ɛ/42 governs the scaling behavior of R(x,x') with ||x-x'||≡r: [R(x,x')]c~xφ1/ν, where [ ]c indicates a conditional average, subject to x and x' being in the same cluster, ν is the correlation length exponent for percolation, and ɛ=6-d, where d is the spatial dimensionality. We give a detailed analysis of the scaling properties of the bulk conductivity and the anomalous diffusion constant introduced by Gefen et al. Our results show conclusively that the Alexander-Orbach conjecture, while numerically quite accurate, is not exact, at least in high spatial dimension. We also evaluate various amplitude ratios associated with susceptibilities, χn involving the nth power of the resistance R(x,x'), e.g., &χ2χ0/χ21=2[1+(19ɛ/420)]. In an appendix we outline how the calculation can be extended to treat the diluted m-component spin model for m>2. As expected, the results for φ1 remain valid for m>2. The techniques described here have led to several recent calculations of various infinite families of exponents.

  14. Formation of a percolating cluster in films prepared by cathodic electrodeposition of a mixture of lower and higher molecular weight epoxy-amine adducts.

    PubMed

    Ranjbar, Zahra; Moradian, Siamak; Rastegar, Saeed

    2003-08-15

    The electrodeposition behavior of blends of primary dispersions of a lower and a higher molecular weight epoxy-amine adduct has been investigated. The throwing power of the above-mentioned blends showed a voltage-dependent critical composition at which the throwing power dropped to a much lower value. This was assigned to the formation of an infinite conducting cluster, the extension of which is dependent on the rate of the electrocoagulation process at the cathode boundary. The random resistor network approach of Stauffer (RRNS) and the random resistor network approach of Miller and Abrahams (RRNMA) were applied to the experimental data with high correlations (r2=0.9314 and 0.9699). The percolating cluster formed within the film, however, gave a critical exponent of conductivity equal to 1.1028, much less than expected from a classical three-dimensional lattice (i.e., 1.5-2.0). This discrepancy was explained in terms of the changed behavior of the film resulting from the bubbles formed near the cathode and its effect on the infinite conducting cluster.

  15. Laser programmable integrated circuit for forming synapses in neural networks

    DOEpatents

    Fu, C.Y.

    1997-02-11

    Customizable neural network in which one or more resistors form each synapse is disclosed. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength. 5 figs.

  16. Laser programmable integrated curcuit for forming synapses in neural networks

    DOEpatents

    Fu, Chi Y.

    1997-01-01

    Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

  17. Dissipation, Voltage Profile and Levy Dragon in a Special Ladder Network

    ERIC Educational Resources Information Center

    Ucak, C.

    2009-01-01

    A ladder network constructed by an elementary two-terminal network consisting of a parallel resistor-inductor block in series with a parallel resistor-capacitor block sometimes is said to have a non-dispersive dissipative response. This special ladder network is created iteratively by replacing the elementary two-terminal network in place of the…

  18. Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

    NASA Astrophysics Data System (ADS)

    Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

    2014-12-01

    Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al2O3, which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within a mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60Co and 137Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between layer of copper-clad laminate and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient.

  19. Extracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methods

    NASA Astrophysics Data System (ADS)

    Schießl, Stefan P.; Rother, Marcel; Lüttgens, Jan; Zaumseil, Jana

    2017-11-01

    The field-effect mobility is an important figure of merit for semiconductors such as random networks of single-walled carbon nanotubes (SWNTs). However, owing to their network properties and quantum capacitance, the standard models for field-effect transistors cannot be applied without modifications. Several different methods are used to determine the mobility with often very different results. We fabricated and characterized field-effect transistors with different polymer-sorted, semiconducting SWNT network densities ranging from low (≈6 μm-1) to densely packed quasi-monolayers (≈26 μm-1) with a maximum on-conductance of 0.24 μS μm-1 and compared four different techniques to evaluate the field-effect mobility. We demonstrate the limits and requirements for each method with regard to device layout and carrier accumulation. We find that techniques that take into account the measured capacitance on the active device give the most reliable mobility values. Finally, we compare our experimental results to a random-resistor-network model.

  20. Enhanced dielectric standoff and mechanical failure in field-structured composites

    NASA Astrophysics Data System (ADS)

    Martin, James E.; Tigges, Chris P.; Anderson, Robert A.; Odinek, Judy

    1999-09-01

    We report dielectric breakdown experiments on electric-field-structured composites of high-dielectric-constant BaTiO3 particles in an epoxy resin. These experiments show a significant increase in the dielectric standoff strength perpendicular to the field structuring direction, relative to control samples consisting of randomly dispersed particles. To understand the relation of this observation to microstructure, we apply a simple resistor-short breakdown model to three-dimensional composite structures generated from a dynamical simulation. In this breakdown model the composite material is assumed to conduct primarily through particle contacts, so the simulated structures are mapped onto a resistor network where the center of mass of each particle is a node that is connected to neighboring nodes by resistors of fixed resistance that irreversibly short to perfect conductors when the current reaches a threshold value. This model gives relative breakdown voltages that are in good agreement with experimental results. Finally, we consider a primitive model of the mechanical strength of a field-structured composite material, which is a current-driven, conductor-insulator fuse model. This model leads to a macroscopic fusing behavior and can be related to mechanical failure of the composite.

  1. Dynamics of Complex Systems Built as Coupled Physical, Communication and Decision Layers

    PubMed Central

    Kühnlenz, Florian; Nardelli, Pedro H. J.

    2016-01-01

    This paper proposes a simple model to capture the complexity of multilayer systems where their constituent layers affect, and are affected by, each other. The physical layer is a circuit composed by a power source and resistors in parallel. Every individual agent aims at maximizing its own delivered power by adding, removing or keeping the resistors it has; the delivered power is in turn a non-linear function that depends on the other agents’ behavior, its own internal state, its global state perception, the information received from its neighbors via the communication network and a randomized selfishness. We develop an agent-based simulation to analyze the effects of number of agents (system size), communication network topology, communication errors and the minimum power gain that triggers a behavioral change on the system dynamic. Our results show that a wave-like behavior at macro-level (caused by individual changes in the decision layer) can only emerge for a specific system size. The ratio between cooperators and defectors depends on the minimum gain assumed—lower minimal gains lead to less cooperation, and vice-versa. Different communication network topologies imply different levels of power utilization and fairness at the physical layer, and a certain level of error in the communication layer induces more cooperation. PMID:26730590

  2. Two-Point Resistance of a Non-Regular Cylindrical Network with a Zero Resistor Axis and Two Arbitrary Boundaries

    NASA Astrophysics Data System (ADS)

    Tan, Zhi-Zhong

    2017-03-01

    We study a problem of two-point resistance in a non-regular m × n cylindrical network with a zero resistor axis and two arbitrary boundaries by means of the Recursion-Transform method. This is a new problem never solved before, the Green’s function technique and the Laplacian matrix approach are invalid in this case. A disordered network with arbitrary boundaries is a basic model in many physical systems or real world systems, however looking for the exact calculation of the resistance of a binary resistor network is important but difficult in the case of the arbitrary boundaries, the boundary is like a wall or trap which affects the behavior of finite network. In this paper we obtain a general resistance formula of a non-regular m × n cylindrical network, which is composed of a single summation. Further, the current distribution is given explicitly as a byproduct of the method. As applications, several interesting results are derived by making special cases from the general formula. Supported by the Natural Science Foundation of Jiangsu Province under Grant No. BK20161278

  3. Unifying model for random matrix theory in arbitrary space dimensions

    NASA Astrophysics Data System (ADS)

    Cicuta, Giovanni M.; Krausser, Johannes; Milkus, Rico; Zaccone, Alessio

    2018-03-01

    A sparse random block matrix model suggested by the Hessian matrix used in the study of elastic vibrational modes of amorphous solids is presented and analyzed. By evaluating some moments, benchmarked against numerics, differences in the eigenvalue spectrum of this model in different limits of space dimension d , and for arbitrary values of the lattice coordination number Z , are shown and discussed. As a function of these two parameters (and their ratio Z /d ), the most studied models in random matrix theory (Erdos-Renyi graphs, effective medium, and replicas) can be reproduced in the various limits of block dimensionality d . Remarkably, the Marchenko-Pastur spectral density (which is recovered by replica calculations for the Laplacian matrix) is reproduced exactly in the limit of infinite size of the blocks, or d →∞ , which clarifies the physical meaning of space dimension in these models. We feel that the approximate results for d =3 provided by our method may have many potential applications in the future, from the vibrational spectrum of glasses and elastic networks to wave localization, disordered conductors, random resistor networks, and random walks.

  4. Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Aghili Yajadda, Mir Massoud

    2014-10-21

    We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at highmore » voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.« less

  5. LOGIC OF CONTROLLED THRESHOLD DEVICES.

    DTIC Science & Technology

    The synthesis of threshold logic circuits from several points of view is presented. The first approach is applicable to resistor-transistor networks...in which the outputs are tied to a common collector resistor. In general, fewer threshold logic gates than NOR gates connected to a common collector...network to realize a specified function such that the failure of any but the output gate can be compensated for by a change in the threshold level (and

  6. Parts Application and Reliability Information Manual for Navy Electronic Equipment

    DTIC Science & Technology

    1985-09-01

    combination of resistor spacing and resistor power rating snould be chosen if this is to be as uu red. m, S,.- 100-6 N 4 ~.~ .~C...are + 5 percent. Combined effects of climate and operation on unsealed types can raise this tolerance to + 15percent. These effects include aging...105.1.1.5 Mounting Under severe shock or vibration conditions (or a combination of both), the resistor network should be restrained from movement with

  7. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Norwood, D P

    1989-01-31

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN (thin film network) manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure. All three types of resistors are temperature-stable and laser-trimmable for precise definition of resistance values.

  8. Evaluation of Pressure Generated by Resistors From Different Positive Expiratory Pressure Devices.

    PubMed

    Fagevik Olsén, Monika; Carlsson, Maria; Olsén, Erik; Westerdahl, Elisabeth

    2015-10-01

    Breathing exercises with positive expiratory pressure (PEP) are used to improve pulmonary function and airway clearance. Different PEP devices are available, but there have been no studies that describe the pressure generated by different resistors. The purpose of this study was to compare pressures generated from the proprietary resistor components of 4 commercial flow-dependent PEP valves with all other parameters kept constant. Resistors from 4 flow-regulated PEP devices (Pep/Rmt system, Wellspect HealthCare; Pipe P breathing exerciser, Koo Medical Equipment; Mini-PEP, Philips Respironics [including resistors by Rüsch]; and 15-mm endo-adapter, VBM Medizintechnik) were tested randomly by a blinded tester at constant flows of 10 and 18 L/min from an external gas system. All resistors were tested 3 times. Resistors with a similar diameter produced statistically significant different pressures at the same flow. The differences were smaller when the flow was 10 L/min compared with 18 L/min. The differences were also smaller when the diameter of the resistor was increased. The pressures produced by the 4 resistors of the same size were all significantly different when measuring 1.5- and 2.0-mm resistors at a flow of 10 L/min and 2.0-mm resistors at a flow of 18 L/min (P < .001). There were no significant differences between any of the resistors when testing sizes of 4.5 and 5.0 mm at either flow. The Mini-PEP and adapter resistors gave the highest pressures. Pressures generated by the different proprietary resistor components of 4 commercial PEP devices were not comparable, even though the diameter of the resistors is reported to be the same. The pressures generated were significantly different, particularly when using small-diameter resistors at a high flow. Therefore, the resistors may not be interchangeable. This is important information for clinicians, particularly when considering PEP for patients who do not tolerate higher pressures. Copyright © 2015 by Daedalus Enterprises.

  9. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

    NASA Astrophysics Data System (ADS)

    Zhang, Lei; Zhu, Liang; Li, Xiaomei; Xu, Zhi; Wang, Wenlong; Bai, Xuedong

    2017-03-01

    One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

  10. Computational analysis of electrical conduction in hybrid nanomaterials with embedded non-penetrating conductive particles

    NASA Astrophysics Data System (ADS)

    Cai, Jizhe; Naraghi, Mohammad

    2016-08-01

    In this work, a comprehensive multi-resolution two-dimensional (2D) resistor network model is proposed to analyze the electrical conductivity of hybrid nanomaterials made of insulating matrix with conductive particles such as CNT reinforced nanocomposites and thick film resistors. Unlike existing approaches, our model takes into account the impenetrability of the particles and their random placement within the matrix. Moreover, our model presents a detailed description of intra-particle conductivity via finite element analysis, which to the authors’ best knowledge has not been addressed before. The inter-particle conductivity is assumed to be primarily due to electron tunneling. The model is then used to predict the electrical conductivity of electrospun carbon nanofibers as a function of microstructural parameters such as turbostratic domain alignment and aspect ratio. To simulate the microstructure of single CNF, randomly positioned nucleation sites were seeded and grown as turbostratic particles with anisotropic growth rates. Particle growth was in steps and growth of each particle in each direction was stopped upon contact with other particles. The study points to the significant contribution of both intra-particle and inter-particle conductivity to the overall conductivity of hybrid composites. Influence of particle alignment and anisotropic growth rate ratio on electrical conductivity is also discussed. The results show that partial alignment in contrast to complete alignment can result in maximum electrical conductivity of whole CNF. High degrees of alignment can adversely affect conductivity by lowering the probability of the formation of a conductive path. The results demonstrate approaches to enhance electrical conductivity of hybrid materials through controlling their microstructure which is applicable not only to carbon nanofibers, but also many other types of hybrid composites such as thick film resistors.

  11. Polymer nanofiber-carbon nanotube network generating circuits

    NASA Astrophysics Data System (ADS)

    Mutlu, Mustafa Umut; Akın, Osman; Yildiz, Ümit Hakan

    2018-02-01

    The polymer nanofiber carbon nanotube (CNT) based devices attracts attention since they promise high performance for next generation devices such as wearable electronics, ultra-light weighted appliances and foldable devices. This abstract describes the utilization of polymer nanofibers and CNT as major component of low cost foldable photo-resistor. We use polymer nanofiber as template guiding CNTs to generate nanocircuits and conductive sensing network. The controlled combination of CNTs and polymer nanofibers provide opportunities for device miniaturization without loss of performance. The nanofiber-CNT network based photo-resistor exhibits broad band response 400 to 1600 nm that holding promises for ultra-thin devices and new sensing platforms.

  12. Highly sensitive vacuum ion pump current measurement system

    DOEpatents

    Hansknecht, John Christopher [Williamsburg, VA

    2006-02-21

    A vacuum system comprising: 1) an ion pump; 2) power supply; 3) a high voltage DC--DC converter drawing power from the power supply and powering the vacuum pump; 4) a feedback network comprising an ammeter circuit including an operational amplifier and a series of relay controlled scaling resistors of different resistance for detecting circuit feedback; 5) an optional power block section intermediate the power supply and the high voltage DC--DC converter; and 6) a microprocessor receiving feedback information from the feedback network, controlling which of the scaling resistors should be in the circuit and manipulating data from the feedback network to provide accurate vacuum measurement to an operator.

  13. Simulation of Electromigration Based on Resistor Networks

    NASA Astrophysics Data System (ADS)

    Patrinos, Anthony John

    A two dimensional computer simulation of electromigration based on resistor networks was designed and implemented. The model utilizes a realistic grain structure generated by the Monte Carlo method and takes specific account of the local effects through which electromigration damage progresses. The dynamic evolution of the simulated thin film is governed by the local current and temperature distributions. The current distribution is calculated by superimposing a two dimensional electrical network on the lattice whose nodes correspond to the particles in the lattice and the branches to interparticle bonds. Current is assumed to flow from site to site via nearest neighbor bonds. The current distribution problem is solved by applying Kirchhoff's rules on the resulting electrical network. The calculation of the temperature distribution in the lattice proceeds by discretizing the partial differential equation for heat conduction, with appropriate material parameters chosen for the lattice and its defects. SEReNe (for Simulation of Electromigration using Resistor Networks) was tested by applying it to common situations arising in experiments with real films with satisfactory results. Specifically, the model successfully reproduces the expected grain size, line width and bamboo effects, the lognormal failure time distribution and the relationship between current density exponent and current density. It has also been modified to simulate temperature ramp experiments but with mixed, in this case, results.

  14. Charge transport in the electrospun nanofiber composite membrane's three-dimensional fibrous structure

    NASA Astrophysics Data System (ADS)

    DeGostin, Matthew B.; Peracchio, Aldo A.; Myles, Timothy D.; Cassenti, Brice N.; Chiu, Wilson K. S.

    2016-03-01

    In this paper, a Fiber Network (FN) ion transport model is developed to simulate the three-dimensional fibrous microstructural morphology that results from the electrospinning membrane fabrication process. This model is able to approximate fiber layering within a membrane as well as membrane swelling due to water uptake. The discrete random fiber networks representing membranes are converted to resistor networks and solved for current flow and ionic conductivity. Model predictions are validated by comparison with experimental conductivity data from electrospun anion exchange membranes (AEM) and proton exchange membranes (PEM) for fuel cells as well as existing theories. The model is capable of predicting in-plane and thru-plane conductivity and takes into account detailed membrane characteristics, such as volume fraction, fiber diameter, fiber conductivity, and membrane layering, and as such may be used as a tool for advanced electrode design.

  15. Programmable Analog Memory Resistors For Electronic Neural Networks

    NASA Technical Reports Server (NTRS)

    Ramesham, Rajeshuni; Thakoor, Sarita; Daud, Taher; Thakoor, Anilkumar P.

    1990-01-01

    Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.

  16. Platonic Relationships among Resistors

    ERIC Educational Resources Information Center

    Allen, Bradley; Liu, Tongtian

    2015-01-01

    Calculating the effective resistance of an electrical network is a common problem in introductory physics courses. Such calculations are typically restricted to two-dimensional networks, though even such networks can become increasingly complex, leading to several studies on their properties. Furthermore, several authors have used advanced…

  17. Biased resistor network model for electromigration failure and related phenomena in metallic lines

    NASA Astrophysics Data System (ADS)

    Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

    2004-11-01

    Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

  18. A Conductometric Indium Oxide Semiconducting Nanoparticle Enzymatic Biosensor Array

    PubMed Central

    Lee, Dongjin; Ondrake, Janet; Cui, Tianhong

    2011-01-01

    We report a conductometric nanoparticle biosensor array to address the significant variation of electrical property in nanomaterial biosensors due to the random network nature of nanoparticle thin-film. Indium oxide and silica nanoparticles (SNP) are assembled selectively on the multi-site channel area of the resistors using layer-by-layer self-assembly. To demonstrate enzymatic biosensing capability, glucose oxidase is immobilized on the SNP layer for glucose detection. The packaged sensor chip onto a ceramic pin grid array is tested using syringe pump driven feed and multi-channel I–V measurement system. It is successfully demonstrated that glucose is detected in many different sensing sites within a chip, leading to concentration dependent currents. The sensitivity has been found to be dependent on the channel length of the resistor, 4–12 nA/mM for channel lengths of 5–20 μm, while the apparent Michaelis-Menten constant is 20 mM. By using sensor array, analytical data could be obtained with a single step of sample solution feeding. This work sheds light on the applicability of the developed nanoparticle microsensor array to multi-analyte sensors, novel bioassay platforms, and sensing components in a lab-on-a-chip. PMID:22163696

  19. Programmable synaptic chip for electronic neural networks

    NASA Technical Reports Server (NTRS)

    Moopenn, A.; Langenbacher, H.; Thakoor, A. P.; Khanna, S. K.

    1988-01-01

    A binary synaptic matrix chip has been developed for electronic neural networks. The matrix chip contains a programmable 32X32 array of 'long channel' NMOSFET binary connection elements implemented in a 3-micron bulk CMOS process. Since the neurons are kept off-chip, the synaptic chip serves as a 'cascadable' building block for a multi-chip synaptic network as large as 512X512 in size. As an alternative to the programmable NMOSFET (long channel) connection elements, tailored thin film resistors are deposited, in series with FET switches, on some CMOS test chips, to obtain the weak synaptic connections. Although deposition and patterning of the resistors require additional processing steps, they promise substantial savings in silicon area. The performance of synaptic chip in a 32-neuron breadboard system in an associative memory test application is discussed.

  20. A Novel Crosstalk Suppression Method of the 2-D Networked Resistive Sensor Array

    PubMed Central

    Wu, Jianfeng; Wang, Lei; Li, Jianqing; Song, Aiguo

    2014-01-01

    The 2-D resistive sensor array in the row–column fashion suffered from the crosstalk problem for parasitic parallel paths. Firstly, we proposed an Improved Isolated Drive Feedback Circuit with Compensation (IIDFCC) based on the voltage feedback method to suppress the crosstalk. In this method, a compensated resistor was specially used to reduce the crosstalk caused by the column multiplexer resistors and the adjacent row elements. Then, a mathematical equivalent resistance expression of the element being tested (EBT) of this circuit was analytically derived and verified by the circuit simulations. The simulation results show that the measurement method can greatly reduce the influence on the EBT caused by parasitic parallel paths for the multiplexers' channel resistor and the adjacent elements. PMID:25046011

  1. Ion implanted dielectric elastomer circuits

    NASA Astrophysics Data System (ADS)

    O'Brien, Benjamin M.; Rosset, Samuel; Anderson, Iain A.; Shea, Herbert R.

    2013-06-01

    Starfish and octopuses control their infinite degree-of-freedom arms with panache—capabilities typical of nature where the distribution of reflex-like intelligence throughout soft muscular networks greatly outperforms anything hard, heavy, and man-made. Dielectric elastomer actuators show great promise for soft artificial muscle networks. One way to make them smart is with piezo-resistive Dielectric Elastomer Switches (DES) that can be combined with artificial muscles to create arbitrary digital logic circuits. Unfortunately there are currently no reliable materials or fabrication process. Thus devices typically fail within a few thousand cycles. As a first step in the search for better materials we present a preliminary exploration of piezo-resistors made with filtered cathodic vacuum arc metal ion implantation. DES were formed on polydimethylsiloxane silicone membranes out of ion implanted gold nano-clusters. We propose that there are four distinct regimes (high dose, above percolation, on percolation, low dose) in which gold ion implanted piezo-resistors can operate and present experimental results on implanted piezo-resistors switching high voltages as well as a simple artificial muscle inverter. While gold ion implanted DES are limited by high hysteresis and low sensitivity, they already show promise for a range of applications including hysteretic oscillators and soft generators. With improvements to implanter process control the promise of artificial muscle circuitry for soft smart actuator networks could become a reality.

  2. Random walks on cubic lattices with bond disorder

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ernst, M.H.; van Velthoven, P.F.J.

    1986-12-01

    The authors consider diffusive systems with static disorder, such as Lorentz gases, lattice percolation, ants in a labyrinth, termite problems, random resistor networks, etc. In the case of diluted randomness the authors can apply the methods of kinetic theory to obtain systematic expansions of dc and ac transport properties in powers of the impurity concentration c. The method is applied to a hopping model on a d-dimensional cubic lattice having two types of bonds with conductivity sigma and sigma/sub 0/ = 1, with concentrations c and 1-c, respectively. For the square lattice the authors explicitly calculate the diffusion coefficient D(c,sigma)more » as a function of c, to O(c/sup 2/) terms included for different ratios of the bond conductivity sigma. The probability of return at long times is given by P/sub 0/(t) approx. (4..pi..D(c,sigma)t)/sup -d/2/, which is determined by the diffusion coefficient of the disordered system.« less

  3. Experimental study on the role of a resistor in the filter of Hall thrusters

    NASA Astrophysics Data System (ADS)

    Liqiu, Wei; Chunsheng, Wang; Zhongxi, Ning; Weiwei, Liu; ChaoHai, Zhang; Daren, Yu

    2011-06-01

    A filter is a mainly component applied to reduce the discharge current low frequency oscillation in the range of 10-100 kHz. The only form of the filter in actual use involves RLC networks, whose design originates from the 1970s, but even now, researchers are unaware of the actual primary motivations for the resistor's presence [S. Barral et al., AIAA Paper 2008-4632, 2008]. Therefore, the role of the resistor in the filter is experimentally studied and discussed through the analysis of control system and electric circuit theory. Experimental results and analysis indicate that the presence of a resistor makes the filter having the phase compensation function. The proper phase-angle and amplitude provided by the filter would increase or decrease the ion mobility and be helpful to balance the ion production in the discharge channel and then to decrease the fluctuation of the plasma density and lower the low frequency oscillation.

  4. Electrostatic Discharge Effects on Thin Film Resistors

    NASA Technical Reports Server (NTRS)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  5. Minimizing the area required for time constants in integrated circuits

    NASA Technical Reports Server (NTRS)

    Lyons, J. C.

    1972-01-01

    When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

  6. Various Attractors, Coexisting Attractors and Antimonotonicity in a Simple Fourth-Order Memristive Twin-T Oscillator

    NASA Astrophysics Data System (ADS)

    Zhou, Ling; Wang, Chunhua; Zhang, Xin; Yao, Wei

    By replacing the resistor in a Twin-T network with a generalized flux-controlled memristor, this paper proposes a simple fourth-order memristive Twin-T oscillator. Rich dynamical behaviors can be observed in the dynamical system. The most striking feature is that this system has various periodic orbits and various chaotic attractors generated by adjusting parameter b. At the same time, coexisting attractors and antimonotonicity are also detected (especially, two full Feigenbaum remerging trees in series are observed in such autonomous chaotic systems). Their dynamical features are analyzed by phase portraits, Lyapunov exponents, bifurcation diagrams and basin of attraction. Moreover, hardware experiments on a breadboard are carried out. Experimental measurements are in accordance with the simulation results. Finally, a multi-channel random bit generator is designed for encryption applications. Numerical results illustrate the usefulness of the random bit generator.

  7. Resistance distribution in the hopping percolation model.

    PubMed

    Strelniker, Yakov M; Havlin, Shlomo; Berkovits, Richard; Frydman, Aviad

    2005-07-01

    We study the distribution function P (rho) of the effective resistance rho in two- and three-dimensional random resistor networks of linear size L in the hopping percolation model. In this model each bond has a conductivity taken from an exponential form sigma proportional to exp (-kappar) , where kappa is a measure of disorder and r is a random number, 0< or = r < or =1 . We find that in both the usual strong-disorder regime L/ kappa(nu) >1 (not sensitive to removal of any single bond) and the extreme-disorder regime L/ kappa(nu) <1 (very sensitive to such a removal) the distribution depends only on L/kappa(nu) and can be well approximated by a log-normal function with dispersion b kappa(nu) /L , where b is a coefficient which depends on the type of lattice, and nu is the correlation critical exponent.

  8. A new method for the calculation of the conductivity of inhomogeneous systems

    NASA Astrophysics Data System (ADS)

    Byshkin, M. S.; Turkin, A. A.

    2005-06-01

    A new method for computing the conductivity of random irregular resistor networks is developed. This method is a generalization of the transfer-matrix technique, proposed by Derrida and Vannimenus for regular 2D and 3D lattices. At the same time for large systems the method presented in this paper is more efficient than the transfer-matrix technique. To demonstrate the method it is applied to a cubic lattice at the percolation threshold and away from it. The conductivity has been found for lattices with size up to 3243. The ratio between the conductivity exponent t and the correlation length exponent η was estimated to be t/η = 2.315, in good agreement with the literature data.

  9. Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement.

    PubMed

    Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

    2017-02-01

    Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 10 11 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

  10. Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

    NASA Astrophysics Data System (ADS)

    Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

    2017-02-01

    Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

  11. Angle detector

    NASA Technical Reports Server (NTRS)

    Parra, G. T. (Inventor)

    1978-01-01

    An angle detector for determining a transducer's angular disposition to a capacitive pickup element is described. The transducer comprises a pendulum mounted inductive element moving past the capacitive pickup element. The capacitive pickup element divides the inductive element into two parts L sub 1 and L sub 2 which form the arms of one side of an a-c bridge. Two networks R sub 1 and R sub 2 having a plurality of binary weighted resistors and an equal number of digitally controlled switches for removing resistors from the networks form the arms of the other side of the a-c bridge. A binary counter, controlled by a phase detector, balances the bridge by adjusting the resistance of R sub 1 and R sub 2. The binary output of the counter is representative of the angle.

  12. Passive Responses Resembling Action Potentials: A Device for the Classroom

    ERIC Educational Resources Information Center

    Newman, Ian A.; Pickard, Barbara G.

    1975-01-01

    Describes the construction and operation of a network of entirely passive electrical components that gives a response to an electrical shock similar to an action potential. The network of resistors, capacitors, and diodes was developed to produce responses that would mimic those observed, for example, when a dark-grown pea epicotyl is shocked…

  13. Network for minimizing current imbalances in a faradaic battery

    DOEpatents

    Wozniak, Walter; Haskins, Harold J.

    1994-01-01

    A circuit for connecting a faradaic battery with circuitry for monitoring the condition of the battery includes a plurality of voltage divider networks providing battery voltage monitoring nodes and includes compensating resistors connected with the networks to maintain uniform discharge currents through the cells of the battery. The circuit also provides a reduced common mode voltage requirement for the monitoring circuitry by referencing the divider networks to one-half the battery voltage.

  14. Method for passively compensating for temperature coefficient of gain in silicon photomultipliers and similar devices

    DOEpatents

    McKisson, John E.; Barbosa, Fernando

    2015-09-01

    A method for designing a completely passive bias compensation circuit to stabilize the gain of multiple pixel avalanche photo detector devices. The method includes determining circuitry design and component values to achieve a desired precision of gain stability. The method can be used with any temperature sensitive device with a nominally linear coefficient of voltage dependent parameter that must be stabilized. The circuitry design includes a negative temperature coefficient resistor in thermal contact with the photomultiplier device to provide a varying resistance and a second fixed resistor to form a voltage divider that can be chosen to set the desired slope and intercept for the characteristic with a specific voltage source value. The addition of a third resistor to the divider network provides a solution set for a set of SiPM devices that requires only a single stabilized voltage source value.

  15. Two-point resistance of an m × n resistor network with an arbitrary boundary and its application in RLC network

    NASA Astrophysics Data System (ADS)

    Zhi-Zhong, Tan

    2016-05-01

    A rectangular m × n resistor network with an arbitrary boundary is investigated, and a general resistance formula between two nodes on an arbitrary axis is derived by the Recursion-Transform (RT) method, a problem that has never been resolved before, for the Green’s function technique and the Laplacian matrix approach are inapplicable to it. To have the exact solution of resistance is important but it is difficult to obtain under the condition of arbitrary boundary. Our result is directly expressed in a single summation and mainly composed of characteristic roots, which contain both finite and infinite cases. Further, the current distribution is given explicitly as a byproduct of the method. Our framework can be effectively applied to RLC networks. As an application to the LC network, we find that our formulation leads to the occurrence of resonances at h 1 = 1 - cos ϕ i - sin ϕ i cot n ϕ i . This somewhat curious result suggests the possibility of practical applications of our formulae to resonant circuits. Project supported by the Prophase Preparatory Project of Natural Science Foundation of Nantong University, China (Grant No. 15ZY16).

  16. I/O impedance controller

    DOEpatents

    Ruesch, Rodney; Jenkins, Philip N.; Ma, Nan

    2004-03-09

    There is disclosed apparatus and apparatus for impedance control to provide for controlling the impedance of a communication circuit using an all-digital impedance control circuit wherein one or more control bits are used to tune the output impedance. In one example embodiment, the impedance control circuit is fabricated using circuit components found in a standard macro library of a computer aided design system. According to another example embodiment, there is provided a control for an output driver on an integrated circuit ("IC") device to provide for forming a resistor divider network with the output driver and a resistor off the IC device so that the divider network produces an output voltage, comparing the output voltage of the divider network with a reference voltage, and adjusting the output impedance of the output driver to attempt to match the output voltage of the divider network and the reference voltage. Also disclosed is over-sampling the divider network voltage, storing the results of the over sampling, repeating the over-sampling and storing, averaging the results of multiple over sampling operations, controlling the impedance with a plurality of bits forming a word, and updating the value of the word by only one least significant bit at a time.

  17. Amplifier for measuring low-level signals in the presence of high common mode voltage

    NASA Technical Reports Server (NTRS)

    Lukens, F. E. (Inventor)

    1985-01-01

    A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages.

  18. Transient Response of a Second Order System Using State Variables.

    ERIC Educational Resources Information Center

    LePage, Wilbur R.

    This programed booklet is designed for the engineering student who is familiar with the techniques of integral calculus and electrical networks. The booklet teaches how to determine the current and voltages across a resistor, inductor, and capacitor after the switch in a network has been closed. This is a classical problem in engineering, the…

  19. Memory elements in the electrical network of Mimosa pudica L.

    PubMed Central

    Volkov, Alexander G; Reedus, Jada; Mitchell, Colee M; Tuckett, Clayton; Volkova, Maya I; Markin, Vladislav S; Chua, Leon

    2014-01-01

    The fourth basic circuit element, a memristor, is a resistor with memory that was postulated by Chua in 1971. Here we found that memristors exist in vivo. The electrostimulation of the Mimosa pudica by bipolar sinusoidal or triangle periodic waves induce electrical responses with fingerprints of memristors. Uncouplers carbonylcyanide-3-chlorophenylhydrazone and carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decrease the amplitude of electrical responses at low and high frequencies of bipolar sinusoidal or triangle periodic electrostimulating waves. Memristive behavior of an electrical network in the Mimosa pudica is linked to the properties of voltage gated ion channels: the channel blocker TEACl reduces the electric response to a conventional resistor. Our results demonstrate that a voltage gated K+ channel in the excitable tissue of plants has properties of a memristor. The discovery of memristors in plants creates a new direction in the modeling and understanding of electrical phenomena in plants. PMID:25482796

  20. Memory elements in the electrical network of Mimosa pudica L.

    PubMed

    Volkov, Alexander G; Reedus, Jada; Mitchell, Colee M; Tuckett, Clayton; Volkova, Maya I; Markin, Vladislav S; Chua, Leon

    2014-01-01

    The fourth basic circuit element, a memristor, is a resistor with memory that was postulated by Chua in 1971. Here we found that memristors exist in vivo. The electrostimulation of the Mimosa pudica by bipolar sinusoidal or triangle periodic waves induce electrical responses with fingerprints of memristors. Uncouplers carbonylcyanide-3-chlorophenylhydrazone and carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decrease the amplitude of electrical responses at low and high frequencies of bipolar sinusoidal or triangle periodic electrostimulating waves. Memristive behavior of an electrical network in the Mimosa pudica is linked to the properties of voltage gated ion channels: the channel blocker TEACl reduces the electric response to a conventional resistor. Our results demonstrate that a voltage gated K(+) channel in the excitable tissue of plants has properties of a memristor. The discovery of memristors in plants creates a new direction in the modeling and understanding of electrical phenomena in plants.

  1. Analyzing student conceptual understanding of resistor networks using binary, descriptive, and computational questions

    NASA Astrophysics Data System (ADS)

    Mujtaba, Abid H.

    2018-02-01

    This paper presents a case study assessing and analyzing student engagement with and responses to binary, descriptive, and computational questions testing the concepts underlying resistor networks (series and parallel combinations). The participants of the study were undergraduate students enrolled in a university in Pakistan. The majority of students struggled with the descriptive question, and while successfully answering the binary and computational ones, they failed to build an expectation for the answer, and betrayed significant lack of conceptual understanding in the process. The data collected was also used to analyze the relative efficacy of the three questions as a means of assessing conceptual understanding. The three questions were revealed to be uncorrelated and unlikely to be testing the same construct. The ability to answer the binary or computational question was observed to be divorced from a deeper understanding of the concepts involved.

  2. Memristors in the electrical network of Aloe vera L.

    PubMed Central

    Volkov, Alexander G; Reedus, Jada; Mitchell, Colee M; Tucket, Clayton; Forde-Tuckett, Victoria; Volkova, Maya I; Markin, Vladislav S; Chua, Leon

    2014-01-01

    A memristor is a resistor with memory, which is a non-linear passive two-terminal electrical element relating magnetic flux linkage and electrical charge. Here we found that memristors exist in vivo. The electrostimulation of the Aloe vera by bipolar sinusoidal or triangle periodic waves induce electrical responses with fingerprints of memristors. Uncouplers carbonylcyanide-3-chlorophenylhydrazone and carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decrease the amplitude of electrical responses at low and high frequencies of bipolar periodic sinusoidal or triangle electrostimulating waves. Memristive behavior of an electrical network in the Aloe vera is linked to the properties of voltage gated ion channels: the K+ channel blocker TEACl reduces the electric response to a conventional resistor. Our results demonstrate that a voltage gated K+ channel in the excitable tissue of plants has properties of a memristor. The discovery of memristors in plants creates a new direction in the modeling and understanding of electrical phenomena in plants. PMID:25763487

  3. Dual design resistor for high voltage conditioning and transmission lines

    DOEpatents

    Siggins, Timothy Lynn [Newport News, VA; Murray, Charles W [Hayes, VA; Walker, Richard L [Norfolk, VA

    2007-01-23

    A dual resistor for eliminating the requirement for two different value resistors. The dual resistor includes a conditioning resistor at a high resistance value and a run resistor at a low resistance value. The run resistor can travel inside the conditioning resistor. The run resistor is capable of being advanced by a drive assembly until an electrical path is completed through the run resistor thereby shorting out the conditioning resistor and allowing the lower resistance run resistor to take over as the current carrier.

  4. Self-organization and solution of shortest-path optimization problems with memristive networks

    NASA Astrophysics Data System (ADS)

    Pershin, Yuriy V.; Di Ventra, Massimiliano

    2013-07-01

    We show that memristive networks, namely networks of resistors with memory, can efficiently solve shortest-path optimization problems. Indeed, the presence of memory (time nonlocality) promotes self organization of the network into the shortest possible path(s). We introduce a network entropy function to characterize the self-organized evolution, show the solution of the shortest-path problem and demonstrate the healing property of the solution path. Finally, we provide an algorithm to solve the traveling salesman problem. Similar considerations apply to networks of memcapacitors and meminductors, and networks with memory in various dimensions.

  5. Ultrastable low-noise current amplifier: a novel device for measuring small electric currents with high accuracy.

    PubMed

    Drung, D; Krause, C; Becker, U; Scherer, H; Ahlers, F J

    2015-02-01

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

  6. Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Drung, D.; Krause, C.; Becker, U.

    2015-02-15

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA’s transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibratemore » both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.« less

  7. Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

    NASA Astrophysics Data System (ADS)

    Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

    2015-02-01

    An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

  8. VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR

    DOEpatents

    Scheele, P.F.

    1958-09-16

    This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.

  9. The nonlinear effect of resistive inhomogeneities on van der Pauw measurements

    NASA Astrophysics Data System (ADS)

    Koon, Daniel W.

    2005-03-01

    The resistive weighting function [D. W. Koon and C. J. Knickerbocker, Rev. Sci. Instrum. 63, 207 (1992)] quantifies the effect of small local inhomogeneities on van der Pauw resistivity measurements, but assumes such effects to be linear. This talk will describe deviations from linearity for a square van der Pauw geometry, modeled using a 5 x 5 grid network of discrete resistors and introducing both positive and negative perturbations to local resistors, covering nearly two orders of magnitude in -δρ/ρ or -δσ/σ. While there is a relatively modest quadratic nonlinearity for inhomogeneities of decreasing conductivity, the nonlinear term for inhomogeneities of decreasing resistivity is approximately cubic and can exceed the linear term.

  10. Circuit theory and model-based inference for landscape connectivity

    USGS Publications Warehouse

    Hanks, Ephraim M.; Hooten, Mevin B.

    2013-01-01

    Circuit theory has seen extensive recent use in the field of ecology, where it is often applied to study functional connectivity. The landscape is typically represented by a network of nodes and resistors, with the resistance between nodes a function of landscape characteristics. The effective distance between two locations on a landscape is represented by the resistance distance between the nodes in the network. Circuit theory has been applied to many other scientific fields for exploratory analyses, but parametric models for circuits are not common in the scientific literature. To model circuits explicitly, we demonstrate a link between Gaussian Markov random fields and contemporary circuit theory using a covariance structure that induces the necessary resistance distance. This provides a parametric model for second-order observations from such a system. In the landscape ecology setting, the proposed model provides a simple framework where inference can be obtained for effects that landscape features have on functional connectivity. We illustrate the approach through a landscape genetics study linking gene flow in alpine chamois (Rupicapra rupicapra) to the underlying landscape.

  11. Integrated Circuit For Simulation Of Neural Network

    NASA Technical Reports Server (NTRS)

    Thakoor, Anilkumar P.; Moopenn, Alexander W.; Khanna, Satish K.

    1988-01-01

    Ballast resistors deposited on top of circuit structure. Cascadable, programmable binary connection matrix fabricated in VLSI form as basic building block for assembly of like units into content-addressable electronic memory matrices operating somewhat like networks of neurons. Connections formed during storage of data, and data recalled from memory by prompting matrix with approximate or partly erroneous signals. Redundancy in pattern of connections causes matrix to respond with correct stored data.

  12. Front-end circuit for position sensitive silicon and vacuum tube photomultipliers with gain control and depth of interaction measurement

    NASA Astrophysics Data System (ADS)

    Herrero, Vicente; Colom, Ricardo; Gadea, Rafael; Lerche, Christoph W.; Cerdá, Joaquín; Sebastiá, Ángel; Benlloch, José M.

    2007-06-01

    Silicon Photomultipliers, though still under development for mass production, may be an alternative to traditional Vacuum Photomultipliers Tubes (VPMT). As a consequence, electronic front-ends initially designed for VPMT will need to be modified. In this simulation, an improved architecture is presented which is able to obtain impact position and depth of interaction of a gamma ray within a continuous scintillation crystal, using either kind of PM. A current sensitive preamplifier stage with individual gain adjustment interfaces the multi-anode PM outputs with a current division resistor network. The preamplifier stage allows to improve front-end processing delay and temporal resolution behavior as well as to increase impact position calculation resolution. Depth of interaction (DOI) is calculated from the width of the scintillation light distribution, which is related to the sum of voltages in resistor network input nodes. This operation is done by means of a high-speed current mode scheme.

  13. Trigonometrical sums connected with the chiral Potts model, Verlinde dimension formula, two-dimensional resistor network, and number theory

    NASA Astrophysics Data System (ADS)

    Chair, Noureddine

    2014-02-01

    We have recently developed methods for obtaining exact two-point resistance of the complete graph minus N edges. We use these methods to obtain closed formulas of certain trigonometrical sums that arise in connection with one-dimensional lattice, in proving Scott's conjecture on permanent of Cauchy matrix, and in the perturbative chiral Potts model. The generalized trigonometrical sums of the chiral Potts model are shown to satisfy recursion formulas that are transparent and direct, and differ from those of Gervois and Mehta. By making a change of variables in these recursion formulas, the dimension of the space of conformal blocks of SU(2) and SO(3) WZW models may be computed recursively. Our methods are then extended to compute the corner-to-corner resistance, and the Kirchhoff index of the first non-trivial two-dimensional resistor network, 2×N. Finally, we obtain new closed formulas for variant of trigonometrical sums, some of which appear in connection with number theory.

  14. Scaling Laws for NanoFET Sensors

    NASA Astrophysics Data System (ADS)

    Wei, Qi-Huo; Zhou, Fu-Shan

    2008-03-01

    In this paper, we report our numerical studies of the scaling laws for nanoplate field-effect transistor (FET) sensors by simplifying the nanoplates as random resistor networks. Nanowire/tube FETs are included as the limiting cases where the device width goes small. Computer simulations show that the field effect strength exerted by the binding molecules has significant impact on the scaling behaviors. When the field effect strength is small, nanoFETs have little size and shape dependence. In contrast, when the field-effect strength becomes stronger, there exists a lower detection threshold for charge accumulation FETs and an upper detection threshold for charge depletion FET sensors. At these thresholds, the nanoFET devices undergo a transition between low and large sensitivities. These thresholds may set the detection limits of nanoFET sensors. We propose to eliminate these detection thresholds by employing devices with very short source-drain distance and large width.

  15. Roll-Axis Hydrofluidic Stability Augmentation System Development

    DTIC Science & Technology

    1975-09-01

    lifi .1035 SW 30 left for znro time delay - r Ight for other. 17 Preceding page Hank Recordings of the simulated aircraft performance to...DESIGN The analytical effort defined the gains and shaping networks required for the roll-axis damper system for the OH-58A helicopter, and the...Shaping Networks Usually a combination of resistors and capacitors (bellows) is designed to provide the following functions: a) b) 3.1.4 1 Lag

  16. Op-amp gyrator simulates high Q inductor

    NASA Technical Reports Server (NTRS)

    Sutherland, W. C.

    1977-01-01

    Gyrator circuit consisting of dual operational amplifier and four resistors inverts impedance of capacitor to simulate inductor. Synthetic inductor has high Q factor, good stability, wide bandwidth, and easily determined value of inductance that is independent of frequency. It readily lends itself to integrated-circuit applications, including filter networks.

  17. Complex dynamics of memristive circuits: Analytical results and universal slow relaxation

    NASA Astrophysics Data System (ADS)

    Caravelli, F.; Traversa, F. L.; Di Ventra, M.

    2017-02-01

    Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph connectivity on the memory dynamics are still few, thus limiting our understanding of these important dynamical systems. In this paper, we derive an exact matrix equation of motion that takes into account all the network constraints of a purely memristive circuit, and we employ it to derive analytical results regarding its relaxation properties. We are able to describe the memory evolution in terms of orthogonal projection operators onto the subspace of fundamental loop space of the underlying circuit. This orthogonal projection explicitly reveals the coupling between the spatial and temporal sectors of the memristive circuits and compactly describes the circuit topology. For the case of disordered graphs, we are able to explain the emergence of a power-law relaxation as a superposition of exponential relaxation times with a broad range of scales using random matrices. This power law is also universal, namely independent of the topology of the underlying graph but dependent only on the density of loops. In the case of circuits subject to alternating voltage instead, we are able to obtain an approximate solution of the dynamics, which is tested against a specific network topology. These results suggest a much richer dynamics of memristive networks than previously considered.

  18. Random pulse generator

    NASA Technical Reports Server (NTRS)

    Lindsey, R. S., Jr. (Inventor)

    1975-01-01

    An exemplary embodiment of the present invention provides a source of random width and random spaced rectangular voltage pulses whose mean or average frequency of operation is controllable within prescribed limits of about 10 hertz to 1 megahertz. A pair of thin-film metal resistors are used to provide a differential white noise voltage pulse source. Pulse shaping and amplification circuitry provide relatively short duration pulses of constant amplitude which are applied to anti-bounce logic circuitry to prevent ringing effects. The pulse outputs from the anti-bounce circuits are then used to control two one-shot multivibrators whose output comprises the random length and random spaced rectangular pulses. Means are provided for monitoring, calibrating and evaluating the relative randomness of the generator.

  19. Transport and percolation in complex networks

    NASA Astrophysics Data System (ADS)

    Li, Guanliang

    To design complex networks with optimal transport properties such as flow efficiency, we consider three approaches to understanding transport and percolation in complex networks. We analyze the effects of randomizing the strengths of connections, randomly adding long-range connections to regular lattices, and percolation of spatially constrained networks. Various real-world networks often have links that are differentiated in terms of their strength, intensity, or capacity. We study the distribution P(σ) of the equivalent conductance for Erdoḧs-Rényi (ER) and scale-free (SF) weighted resistor networks with N nodes, for which links are assigned with conductance σ i ≡ e-axi, where xi is a random variable with 0 < xi < 1. We find, both analytically and numerically, that P(σ) for ER networks exhibits two regimes: (i) For σ < e-apc, P(σ) is independent of N and scales as a power law P(σ) ˜ sk/a-1 . Here pc = 1/ is the critical percolation threshold of the network and is the average degree of the network. (ii) For σ > e -apc, P(σ) has strong N dependence and scales as P(σ) ˜ f(σ, apc/N1/3). Transport properties are greatly affected by the topology of networks. We investigate the transport problem in lattices with long-range connections and subject to a cost constraint, seeking design principles for optimal transport networks. Our network is built from a regular d-dimensional lattice to be improved by adding long-range connections with probability Pij ˜ r-aij , where rij is the lattice distance between site i and j. We introduce a cost constraint on the total length of the additional links and find optimal transport in the system for α = d + 1, established here for d = 1, 2 and 3 for regular lattices and df for fractals. Remarkably, this cost constraint approach remains optimal, regardless of the strategy used for transport, whether based on local or global knowledge of the network structure. To further understand the role that long-range connections play in optimizing the transport of complex systems, we study the percolation of spatially constrained networks. We now consider originally empty lattices embedded in d dimensions by adding long-range connections with the same power law probability p(r) ˜ r -α. We find that, for α ≤ d, the percolation transition belongs to the universality class of percolation in ER networks, while for α > 2d it belongs to the universality class of percolation in regular lattices (for one-dimensional linear chain, there is no percolation transition). However for d < α < 2d, the percolation properties show new intermediate behavior different from ER networks, with critical exponents that depend on α.

  20. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: phase, amplitude, and clustering effects.

    PubMed

    Minati, Ludovico

    2014-12-01

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.

  1. High Power Attenuator and Termination.

    DTIC Science & Technology

    sections are configured from a single thin film series resistor comprised of gold and a plurality of shunt resistors formed from a layer of cermet which...underlies the gold film resistor. The cermet shunt resistors extend away from the series resistor to the side edge of the substrate where they

  2. Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, ChangLi; Complex and Intelligent System Research Center, East China University of Science and Technology, Shanghai 200237; Wang, XueJun

    2016-05-15

    The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designedmore » using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.« less

  3. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    DOEpatents

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  4. Fabrication and electrical characterization of silicon nanowires based resistors

    NASA Astrophysics Data System (ADS)

    Ni, L.; Demami, F.; Rogel, R.; Salaün, A. C.; Pichon, L.

    2009-11-01

    Silicon nanowires (SiNWs) are synthesized via the Vapor-Liquid-Solid (VLS) mechanism using gold (Au) as metal catalyst and silane (SiH4) as precursor gas. Au nanoparticles are employed as liquid droplets catalysis during the SiNWs growth performed in a hot wall LPCVD reactor at 480°C and 40 Pa. SiNWs local synthesis at micron scale is demonstrated using classical optical photolithography process. SiNWs grow with high density anchored at the dedicated catalyst islands. This resulting network is used to interconnect two heavily doped polysilicon interdigitated electrodes leading to the formation of electrical resistors in a coplanar structure. Current-voltage (I-V) characteristics highlight a symmetric shape. The temperature dependence of the electrical resistance is activated, with activation energy of 0.47 eV at temperatures greater than 300K.

  5. Chaos in a neural network circuit

    NASA Astrophysics Data System (ADS)

    Kepler, Thomas B.; Datt, Sumeet; Meyer, Robert B.; Abott, L. F.

    1990-12-01

    We have constructed a neural network circuit of four clipped, high-grain, integrating operational amplifiers coupled to each other through an array of digitally programmable resistor ladders (MDACs). In addition to fixed-point and cyclic behavior, the circuit exhibits chaotic behavior with complex strange attractors which are approached through period doubling, intermittent attractor expansion and/or quasiperiodic pathways. Couplings between the nonlinear circuit elements are controlled by a computer which can automatically search through the space of couplings for interesting phenomena. We report some initial statistical results relating the behavior of the network to properties of its coupling matrix. Through these results and further research the circuit should help resolve fundamental issues concerning chaos in neural networks.

  6. Conducting-insulating transition in adiabatic memristive networks

    NASA Astrophysics Data System (ADS)

    Sheldon, Forrest C.; Di Ventra, Massimiliano

    2017-01-01

    The development of neuromorphic systems based on memristive elements—resistors with memory—requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a discontinuous transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON-OFF ratio. We investigate the consequences of this transition for the memristive current-voltage characteristics both through simulation and theory, and demonstrate the role of current-voltage duality in relating forward and reverse switching processes. Our work sheds considerable light on the statistical properties of memristive networks that are presently studied both for unconventional computing and as models of neural networks.

  7. Thermoelectric properties of semiconductor nanowire networks

    DOE PAGES

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-28

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor)network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi 2Te 3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNWmore » demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. In conclusion, we provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.« less

  8. Resistor holder

    DOEpatents

    Broadhurst, John H.

    1989-01-01

    A resistor device for use with electrostatic particle accelerators includes a resistor element positioned within a tubular housing having a fixed end cap at one end thereof and a movable end cap at the other end thereof. The tubular housing, fixed end cap, and movable end cap serve as an electromagnetic field for the resistor element. Conductive disks engage opposite ends of the resistor element and concentrically position the resistor element within the tubular housing. Helical springs engage the conductive disks and the end caps to yieldably support the movable end caps and resistor element for yieldable axial movement relative to the tubular housing. An annular conducting ring is secured to the tubular housing and is spaced radially from the movable end cap and cooperates with the latter to define an annular spark gap.

  9. An equivalent circuit model of supercapacitors for applications in wireless sensor networks

    NASA Astrophysics Data System (ADS)

    Yang, Hengzhao; Zhang, Ying

    2011-04-01

    Energy harvesting technologies have been extensively researched to develop long-lived wireless sensor networks. To better utilize the harvested energy, various energy storage systems are proposed. A simple circuit model is developed to describe supercapacitor behavior, which uses two resistor-capacitor branches with different time constants to characterize the charging and redistribution processes, and a variable leakage resistance (VLR) to characterize the self-discharge process. The voltage and temperature dependence of the VLR values is also discussed. Results show that the VLR model is more accurate than the energy recursive equation (ERE) models for short term wireless sensor network applications.

  10. A decentralized approach to reducing the social costs of cascading failures

    NASA Astrophysics Data System (ADS)

    Hines, Paul

    Large cascading failures in electrical power networks come with enormous social costs. These can be direct financial costs, such as the loss of refrigerated foods in grocery stores, or more indirect social costs, such as the traffic congestion that results from the failure of traffic signals. While engineers and policy makers have made numerous technical and organizational changes to reduce the frequency and impact of large cascading failures, the existing data, as described in Chapter 2 of this work, indicate that the overall frequency and impact of large electrical blackouts in the United States are not decreasing. Motivated by the cascading failure problem, this thesis describes a new method for Distributed Model Predictive Control and a power systems application. The central goal of the method, when applied to power systems, is to reduce the social costs of cascading failures by making small, targeted reductions in load and generation and changes to generator voltage set points. Unlike some existing schemes that operate from centrally located control centers, the method is operated by software agents located at substations distributed throughout the power network. The resulting multi-agent control system is a new approach to decentralized control, combining Distributed Model Predictive Control and Reciprocal Altruism. Experimental results indicate that this scheme can in fact decrease the average size, and thus social costs, of cascading failures. Over 100 randomly generated disturbances to a model of the IEEE 300 bus test network, the method resulted in nearly an order of magnitude decrease in average event size (measured in cost) relative to cascading failure simulations without remedial control actions. Additionally, the communication requirements for the method are measured, and found to be within the bandwidth capabilities of current communications technology (on the order of 100kB/second). Experiments on several resistor networks with varying structures, including a random graph, a scale-free network and a power grid indicate that the effectiveness of decentralized control schemes, like the method proposed here, is a function of the structure of the network that is to be controlled.

  11. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Minati, Ludovico, E-mail: lminati@ieee.org, E-mail: ludovico.minati@unitn.it

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes andmore » in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.« less

  12. 30 CFR 77.801 - Grounding resistors.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 77.801 Section 77.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH...-Voltage Distribution § 77.801 Grounding resistors. The grounding resistor, where required, shall be of the...

  13. 30 CFR 77.510 - Resistors; location and guarding.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Resistors; location and guarding. 77.510 Section 77.510 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Electrical Equipment-General § 77.510 Resistors; location and guarding. Resistors, heaters...

  14. Gas-Sensing Flip-Flop Circuits

    NASA Technical Reports Server (NTRS)

    Buehler, Martin G.; Blaes, Brent R.; Williams, Roger; Ryan, Margaret A.

    1995-01-01

    Gas-sensing integrated circuits consisting largely of modified static random-access memories (SRAMs) undergoing development, building on experience gained in use of modified SRAMs as radiation sensors. Each SRAM memory cell includes flip-flop circuit; sensors exploit metastable state that lies between two stable states (corresponding to binary logic states) of flip-flop circuit. Voltages of metastable states vary with exposures of gas-sensitive resistors.

  15. Ionization monitor with improved ultra-high megohm resistor

    DOEpatents

    Burgess, Edward T.

    1988-11-05

    An ionization monitor measures extremely small currents using a resistor containing a beta emitter to generate ion-pairs which are collected as current when the device is used as a feedback resistor in an electrometer circuit. By varying the amount of beta emitter, the resistance of the resistor may be varied.

  16. A novel compensation method for the anode gain non-uniformity of multi-anode photomultiplier tubes

    NASA Astrophysics Data System (ADS)

    Lee, Chan Mi; Kwon, Sun Il; Ko, Guen Bae; Ito, Mikiko; Yoon, Hyun Suk; Lee, Dong Soo; Jong Hong, Seong; Lee, Jae Sung

    2012-01-01

    The position-sensitive multi-anode photomultiplier tube (MA-PMT) is widely used in high-resolution scintillation detectors. However, the anode gain non-uniformity of this device is a limiting factor that degrades the intrinsic performance of the detector module. The aim of this work was to develop a gain compensation method for the MA-PMT and evaluate the resulting enhancement in the performance of the detector. The method employs a circuit that is composed only of resistors and is placed between the MA-PMT and a resistive charge division network (RCN) used for position encoding. The goal of the circuit is to divide the output current from each anode, so the same current flows into the RCN regardless of the anode gain. The current division is controlled by the combination of a fixed-value series resistor with an output impedance that is much larger than the input impedance of the RCN, and a parallel resistor, which detours part of the current to ground. PSpice simulations of the compensation circuit and the RCN were performed to determine optimal values for the compensation resistors when used with Hamamatsu H8500 MA-PMTs. The intrinsic characteristics of a detector module consisting of this MA-PMT and a lutetium-gadolinium-oxyorthosilicate (LGSO) crystal array were tested with and without the gain compensation method. In simulation, the average coefficient of variation and max/min ratio decreased from 15.7% to 2.7% and 2.0 to 1.2, respectively. In the flood map of the LGSO-H8500 detector, the uniformity of the photopeak position for individual crystals and the energy resolution were much improved. The feasibility of the method was shown by applying it to an octagonal prototype positron emission tomography scanner.

  17. Modeling Percolation in Polymer Nanocomposites by Stochastic Microstructuring

    PubMed Central

    Soto, Matias; Esteva, Milton; Martínez-Romero, Oscar; Baez, Jesús; Elías-Zúñiga, Alex

    2015-01-01

    A methodology was developed for the prediction of the electrical properties of carbon nanotube-polymer nanocomposites via Monte Carlo computational simulations. A two-dimensional microstructure that takes into account waviness, fiber length and diameter distributions is used as a representative volume element. Fiber interactions in the microstructure are identified and then modeled as an equivalent electrical circuit, assuming one-third metallic and two-thirds semiconductor nanotubes. Tunneling paths in the microstructure are also modeled as electrical resistors, and crossing fibers are accounted for by assuming a contact resistance associated with them. The equivalent resistor network is then converted into a set of linear equations using nodal voltage analysis, which is then solved by means of the Gauss–Jordan elimination method. Nodal voltages are obtained for the microstructure, from which the percolation probability, equivalent resistance and conductivity are calculated. Percolation probability curves and electrical conductivity values are compared to those found in the literature. PMID:28793594

  18. Current Source Logic Gate

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

    2017-01-01

    A current source logic gate with depletion mode field effect transistor ("FET") transistors and resistors may include a current source, a current steering switch input stage, and a resistor divider level shifting output stage. The current source may include a transistor and a current source resistor. The current steering switch input stage may include a transistor to steer current to set an output stage bias point depending on an input logic signal state. The resistor divider level shifting output stage may include a first resistor and a second resistor to set the output stage point and produce valid output logic signal states. The transistor of the current steering switch input stage may function as a switch to provide at least two operating points.

  19. Electrical Switching of Perovskite Thin-Film Resistors

    NASA Technical Reports Server (NTRS)

    Liu, Shangqing; Wu, Juan; Ignatiev, Alex

    2010-01-01

    Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

  20. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    NASA Astrophysics Data System (ADS)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  1. Feeding a sub-ns-risetime rectangular pulse onto a rod-shaped resistive high-voltage divider in risetime <2 ns

    NASA Astrophysics Data System (ADS)

    Zeng, Zhengzhong; Ma, Lianying

    2004-01-01

    A simple and effective bridge-type feeding network consisting only of ordinary resistors and conductive wires is designed and tested which launches a 0.8 ns risetime, 40 ns width, and kV-level rectangular pulse from a coaxial cable onto a rod-shaped resistive high-voltage divider with risetime <2 ns with no significant distortion.

  2. SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  3. Experimental Performance of a Micromachined Heat Flux Sensor

    NASA Technical Reports Server (NTRS)

    Stefanescu, S.; DeAnna, R. G.; Mehregany, M.

    1998-01-01

    Steady-state and frequency response calibration of a microfabricated heat-flux sensor have been completed. This sensor is batch fabricated using standard, micromachining techniques, allowing both miniaturization and the ability to create arrays of sensors and their corresponding interconnects. Both high-frequency and spatial response is desired, so the sensors are both thin and of small cross-sectional area. Thin-film, temperature-sensitive resistors are used as the active gauge elements. Two sensor configurations are investigated: (1) a Wheatstone-bridge using four resistors; and (2) a simple, two-resistor design. In each design, one resistor (or pair) is covered by a thin layer (5000 A) thermal barrier; the other resistor (or pair) is covered by a thick (5 microns) thermal barrier. The active area of a single resistor is 360 microns by 360 microns; the total gauge area is 1.5 mm square. The resistors are made of 2000 A-thick metal; and the entire gauge is fabricated on a 25 microns-thick flexible, polyimide substrate. Heat flux through the surface changes the temperature of the resistors and produces a corresponding change in resistance. Sensors were calibrated using two radiation heat sources: (1) a furnace for steady-state, and (2) a light and chopper for frequency response.

  4. Special features of large-size resistors for high-voltage pulsed installations

    NASA Astrophysics Data System (ADS)

    Minakova, N. N.; Ushakov, V. Ya.

    2017-12-01

    Many structural materials in pulsed power engineering operate under extreme conditions. For example, in high-voltage electrophysical installations among which there are multistage high-voltage pulse generators (HVPG), rigid requirements are imposed on characteristics of solid-state resistors that are more promising in comparison with widely used liquid resistors. Materials of such resistors shall be able to withstand strong electric fields, operate at elevated temperatures, in transformer oil, etc. Effective charge of high-voltage capacitors distributed over the HVPG steps (levels) requires uniform voltage distribution along the steps of the installation that can be obtained using large-size resistors. For such applications, polymer composite materials are considered rather promising. They can work in transformer oil and have small mass in comparison with bulky resistors on inorganic basis. This allows technical solutions already developed and implemented in HVPG with liquid resistors to be employed. This paper is devoted to the solution of some tasks related to the application of filled polymers in high-voltage engineering.

  5. YADCLAN: yet another digitally-controlled linear artificial neuron.

    PubMed

    Frenger, Paul

    2003-01-01

    This paper updates the author's 1999 RMBS presentation on digitally controlled linear artificial neuron design. Each neuron is based on a standard operational amplifier having excitatory and inhibitory inputs, variable gain, an amplified linear analog output and an adjustable threshold comparator for digital output. This design employs a 1-wire serial network of digitally controlled potentiometers and resistors whose resistance values are set and read back under microprocessor supervision. This system embodies several unique and useful features, including: enhanced neuronal stability, dynamic reconfigurability and network extensibility. This artificial neuronal is being employed for feature extraction and pattern recognition in an advanced robotic application.

  6. French wind generator systems. [as auxiliary power sources for electrical networks

    NASA Technical Reports Server (NTRS)

    Noel, J. M.

    1973-01-01

    The experimental design of a wind driven generator with a rated power of 800 kilovolt amperes and capable of being connected to the main electrical network is reported. The rotor is a three bladed propeller; each blade is twisted but the fixed pitch is adjustable. The asynchronous 800-kilovolt ampere generator is driven by the propeller through a gearbox. A dissipating resistor regulates the machine under no-load conditions. The first propeller on the machine lasted 18 months; replacement of the rigid propeller with a flexible structure resulted in breakdown due to flutter effects.

  7. Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  8. Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2017-01-01

    The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

  9. Circuit for Driving Piezoelectric Transducers

    NASA Technical Reports Server (NTRS)

    Randall, David P.; Chapsky, Jacob

    2009-01-01

    The figure schematically depicts an oscillator circuit for driving a piezoelectric transducer to excite vibrations in a mechanical structure. The circuit was designed and built to satisfy application-specific requirements to drive a selected one of 16 such transducers at a regulated amplitude and frequency chosen to optimize the amount of work performed by the transducer and to compensate for both (1) temporal variations of the resonance frequency and damping time of each transducer and (2) initially unknown differences among the resonance frequencies and damping times of different transducers. In other words, the circuit is designed to adjust itself to optimize the performance of whichever transducer is selected at any given time. The basic design concept may be adaptable to other applications that involve the use of piezoelectric transducers in ultrasonic cleaners and other apparatuses in which high-frequency mechanical drives are utilized. This circuit includes three resistor-capacitor networks that, together with the selected piezoelectric transducer, constitute a band-pass filter having a peak response at a frequency of about 2 kHz, which is approximately the resonance frequency of the piezoelectric transducers. Gain for generating oscillations is provided by a power hybrid operational amplifier (U1). A junction field-effect transistor (Q1) in combination with a resistor (R4) is used as a voltage-variable resistor to control the magnitude of the oscillation. The voltage-variable resistor is part of a feedback control loop: Part of the output of the oscillator is rectified and filtered for use as a slow negative feedback to the gate of Q1 to keep the output amplitude constant. The response of this control loop is much slower than 2 kHz and, therefore, does not introduce significant distortion of the oscillator output, which is a fairly clean sine wave. The positive AC feedback needed to sustain oscillations is derived from sampling the current through the piezoelectric transducer. This positive AC feedback, in combination with the slow feedback to the voltage-variable resistors, causes the overall loop gain to be just large enough to keep the oscillator running. The positive feedback loop includes two 16-channel multiplexers, which are not shown in the figure. One multiplexer is used to select the desired piezoelectric transducer. The other multiplexer, which is provided for use in the event that there are significant differences among the damping times of the 16 piezoelectric transducers, facilitates changing the value of one of the resistors in the positive-feedback loop to accommodate the damping time of the selected transducer.

  10. SUPPLEMENTARY COMPARISON: APMP.EM-S6: Bilateral supplementary comparison of resistance

    NASA Astrophysics Data System (ADS)

    Charoensook, Ajchara; Jassadajin, Chaiwat; Chen, Henry; Ricketts, Brian

    2004-01-01

    A bilateral supplementary comparison of resistance, APMP.EM-S6, was conducted between the National Institute of Metrology Thailand (NIMT) and the CSIRO National Measurement Laboratory of Australia (NML). The comparison covered seven values of resistance, 0.1 Ω, 1 Ω, 100 Ω, 10 kΩ, 100 kΩ, 1 MΩ and 100 MΩ. The 0.1 Ω resistor was a YEW type 2792, the 100 MΩ resistor was an IET type SRC and the other five resistors were Fluke type 742A. The resistors were supplied by NIMT, and NML was the pilot laboratory for the comparison. The measurements for the comparison were made between December 2003 and April 2004. The resistors were measured on three separate occasions by NIMT and between each of these occasions the resistors were sent to NML for measurement. The resistors of nominal values 0.1 Ω, 1 Ω, 100 Ω and 10 kΩ were measured as four-terminal resistors while the 100 kΩ, 1 MΩ and 100 MΩ resistors were measured as two-terminal resistors. The quantity En (the absolute value of the difference between the values obtained at the two laboratories divided by the root sum square of the expanded uncertainties of the two values) was calculated for each resistance value used in the comparison. In all cases En was less than 0.5. Main text. To reach the main text of this paper, click on Final Report. Note that this text is that which appears in Appendix B of the BIPM key comparison database kcdb.bipm.org/. The final report has been peer-reviewed and approved for publication by the APMP, according to the provisions of the Mutual Recognition Arrangement (MRA).

  11. Analyses of power output of piezoelectric energy-harvesting devices directly connected to a load resistor using a coupled piezoelectric-circuit finite element method.

    PubMed

    Zhu, Meiling; Worthington, Emma; Njuguna, James

    2009-07-01

    This paper presents, for the first time, a coupled piezoelectric-circuit finite element model (CPC-FEM) to analyze the power output of a vibration-based piezoelectric energy-harvesting device (EHD) when it is connected to a load resistor. Special focus is given to the effect of the load resistor value on the vibrational amplitude of the piezoelectric EHD, and thus on the current, voltage, and power generated by the device, which are normally assumed to be independent of the load resistor value to reduce the complexity of modeling and simulation. The presented CPC-FEM uses a cantilever with a sandwich structure and a seismic mass attached to the tip to study the following characteristics of the EHD as a result of changing the load resistor value: 1) the electric outputs: the current through and voltage across the load resistor; 2) the power dissipated by the load resistor; 3) the displacement amplitude of the tip of the cantilever; and 4) the shift in the resonant frequency of the device. It is found that these characteristics of the EHD have a significant dependence on the load resistor value, rather than being independent of it as is assumed in most literature. The CPC-FEM is capable of predicting the generated output power of the EHD with different load resistor values while simultaneously calculating the effect of the load resistor value on the displacement amplitude of the tip of the cantilever. This makes the CPC-FEM invaluable for validating the performance of a designed EHD before it is fabricated and tested, thereby reducing the recurring costs associated with repeat fabrication and trials. In addition, the proposed CPC-FEM can also be used for producing an optimized design for maximum power output.

  12. Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

    PubMed Central

    Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

    2015-01-01

    Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C. PMID:28793598

  13. Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors.

    PubMed

    Cheng, Huan-Yi; Chen, Ying-Chung; Li, Pei-Jou; Yang, Cheng-Fu; Huang, Hong-Hsin

    2015-10-02

    Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs' applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N₂ atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C.

  14. Nano and Mesoscale Ion and Water Transport in Perfluorosulfonic AcidMembranes

    DTIC Science & Technology

    2017-10-01

    Nano- and Mesoscale Ion and Water Transport in Perfluorosulfonic-Acid Membranes A. R. Crothers a,b , C. J. Radke a,b , A. Z. Weber a a...Berkeley, CA 94720, USA Water and aqueous cations transport along multiple length scales in perfluorosulfonic-acid membranes. Molecular interactions...as a function of hydration. A resistor network upscales the nanoscale properties to predict effective membrane ion and water transport and their

  15. Recursion-transform method and potential formulae of the m × n cobweb and fan networks

    NASA Astrophysics Data System (ADS)

    Tan, Zhi-Zhong

    2017-08-01

    In this paper, we made a new breakthrough, which proposes a new Recursion-Transform (RT) method with potential parameters to evaluate the nodal potential in arbitrary resistor networks. For the first time, we found the exact potential formulae of arbitrary m× n cobweb and fan networks by the RT method, and the potential formulae of infinite and semi-infinite networks are derived. As applications, a series of interesting corollaries of potential formulae are given by using the general formula, the equivalent resistance formula is deduced by using the potential formula, and we find a new trigonometric identity by comparing two equivalence results with different forms. Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20161278).

  16. The Sponge Resistor Model--A Hydrodynamic Analog to Illustrate Ohm's Law, the Resistor Equation R=?l/A, and Resistors in Series and Parallel

    ERIC Educational Resources Information Center

    Pfister, Hans

    2014-01-01

    Physics students encountering electric circuits for the first time often ask why adding more resistors to a circuit sometimes increases and sometimes decreases the resulting total resistance. It appears that these students have an inadequate understanding of current flow and resistance. Students who do not adopt a model of current, voltage, and…

  17. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  18. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  19. Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

    NASA Astrophysics Data System (ADS)

    Birkett, Martin; Penlington, Roger

    2012-08-01

    This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

  20. Irreversible entropy model for damage diagnosis in resistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cuadras, Angel, E-mail: angel.cuadras@upc.edu; Crisóstomo, Javier; Ovejas, Victoria J.

    2015-10-28

    We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropymore » was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.« less

  1. Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

    NASA Astrophysics Data System (ADS)

    Liu, Hong-Tao; Yang, Bao-He; Lv, Hang-Bing; Xu, Xiao-Xin; Luo, Qing; Wang, Guo-Ming; Zhang, Mei-Yun; Long, Shi-Bing; Liu, Qi; Liu, Ming

    2015-02-01

    We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor (1T1R) resistance random access memory (RRAM) device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state (HRS) under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament (CF) formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state (LRS) can be easily changed by removing a few trapping states from the conducting path. Hence, a higher HRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.

  2. Solid-state resistor for pulsed power machines

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas

    2016-12-06

    A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

  3. Design of the Individual Marx Modules for the Atlas Machine 36 Megajoule, 25 Megampere Capacitor Bank

    DTIC Science & Technology

    1995-06-01

    solid body resistors have been chosen for Atlas. For the series damping resistors, reticulated vitreous carbon (RVC) foam plate resistors will be...utilized. RVC resistors are available as a foam like glassy carbon material available with various pore size, ligament density, and ligament diameter...contact louvers used at the current joint interface. This mitigates the necessity of high torque and critical alignment connections. Carbon rod style

  4. Scaling laws for nanoFET sensors

    NASA Astrophysics Data System (ADS)

    Zhou, Fu-Shan; Wei, Qi-Huo

    2008-01-01

    The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to the binding of charged molecules provides a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling laws of nanoplate FET sensors by simplifying nanoplates as random resistor networks with molecular receptors sitting on lattice sites. Nanowire/tube FETs are included as the limiting cases where the device width goes small. Computer simulations show that the field effect strength exerted by the binding molecules has significant impact on the scaling behaviors. When the field effect strength is small, nanoFETs have little size and shape dependence. In contrast, when the field effect strength becomes stronger, there exists a lower detection threshold for charge accumulation FETs and an upper detection threshold for charge depletion FET sensors. At these thresholds, the nanoFET devices undergo a transition between low and large sensitivities. These thresholds may set the detection limits of nanoFET sensors, while they could be eliminated by designing devices with very short source-drain distance and large width.

  5. Layered ultra-thin coherent structures used as electrical resistors having low-temperature coefficient of resistivity

    DOEpatents

    Werner, T.R.; Falco, C.M.; Schuller, I.K.

    1982-08-31

    A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

  6. Solid state switch

    DOEpatents

    Merritt, Bernard T.; Dreifuerst, Gary R.

    1994-01-01

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1500 A peak, 1.0 .mu.s pulsewidth, and 4500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry.

  7. Simplification of reversible Markov chains by removal of states with low equilibrium occupancy.

    PubMed

    Ullah, Ghanim; Bruno, William J; Pearson, John E

    2012-10-21

    We present a practical method for simplifying Markov chains on a potentially large state space when detailed balance holds. A simple and transparent technique is introduced to remove states with low equilibrium occupancy. The resulting system has fewer parameters. The resulting effective rates between the remaining nodes give dynamics identical to the original system's except on very fast timescales. This procedure amounts to using separation of timescales to neglect small capacitance nodes in a network of resistors and capacitors. We illustrate the technique by simplifying various reaction networks, including transforming an acyclic four-node network to a three-node cyclic network. For a reaction step in which a ligand binds, the law of mass action implies a forward rate proportional to ligand concentration. The effective rates in the simplified network are found to be rational functions of ligand concentration. Copyright © 2012 Elsevier Ltd. All rights reserved.

  8. An Investigation of the Static Force Balance of a Model Railgun

    DTIC Science & Technology

    2007-06-01

    this simple circuit diagram two 950 CCA batteries are passed through a variable resistor (R1) to limit the current applied to the model railgun (R2...of a known value and placed a voltmeter across the resistor . For additional protection in these early trials we inserted an equivalent 1kA fuse...our variable resistor . Current then passed through the resistor into the model gun, through a volt-meter with a known resistance, into a kilo-amp

  9. Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

    NASA Technical Reports Server (NTRS)

    Thakoor, A. P.; Lamb, J. L.; Moopenn, A.; Khanna, S. K.

    1987-01-01

    A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

  10. Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

    NASA Technical Reports Server (NTRS)

    Jhabvala, Murzy; Babu, Sachi; Monroy, Carlos; Darren, C.; Krebs, Carolyn A. (Technical Monitor)

    2001-01-01

    Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

  11. High voltage load resistor array

    DOEpatents

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  12. Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor.

    PubMed

    Wang, Xiaozhen; Lu, Tianjian; Yu, Xin; Jin, Jian-Ming; Goddard, Lynford L

    2017-07-04

    We studied the nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtained consistent results. In the theoretical analysis, we used a three-dimensional coupled electrical-thermal-mechanical simulation and obtained the temperature and displacement field of the suspended resistor under a direct current (DC) input voltage. In the experiment, we recorded a sequence of images of the axial thermal expansion of the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumination diffraction phase microscopy (epi-DPM). This method accurately measured nanometer level relative height changes of the resistor in a temporally and spatially resolved manner. Upon application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance of 1.14 Ω and in relative height of 3.5 nm, which agreed reasonably well with the predicted values of 1.08 Ω and 4.4 nm, respectively.

  13. A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

    NASA Astrophysics Data System (ADS)

    Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B.; Tai, Yuan-Chuan

    2010-05-01

    A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 × 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 × 0.8 × 3 mm3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 × 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications.

  14. A sub-millimeter resolution PET detector module using a multi-pixel photon counter array.

    PubMed

    Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B; Tai, Yuan-Chuan

    2010-05-07

    A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 x 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 x 0.8 x 3 mm(3) and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 x 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and +/-5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when +/-10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications.

  15. A sub-millimeter resolution PET detector module using a multi-pixel photon counter array

    PubMed Central

    Song, Tae Yong; Wu, Heyu; Komarov, Sergey; Siegel, Stefan B; Tai, Yuan-Chuan

    2010-01-01

    A PET block detector module using an array of sub-millimeter lutetium oxyorthosilicate (LSO) crystals read out by an array of surface-mount, semiconductor photosensors has been developed. The detector consists of a LSO array, a custom acrylic light guide, a 3 × 3 multi-pixel photon counter (MPPC) array (S10362-11-050P, Hamamatsu Photonics, Japan) and a readout board with a charge division resistor network. The LSO array consists of 100 crystals, each measuring 0.8 × 0.8 × 3 mm3 and arranged in 0.86 mm pitches. A Monte Carlo simulation was used to aid the design and fabrication of a custom light guide to control distribution of scintillation light over the surface of the MPPC array. The output signals of the nine MPPC are multiplexed by a charge division resistor network to generate four position-encoded analog outputs. Flood image, energy resolution and timing resolution measurements were performed using standard NIM electronics. The linearity of the detector response was investigated using gamma-ray sources of different energies. The 10 × 10 array of 0.8 mm LSO crystals was clearly resolved in the flood image. The average energy resolution and standard deviation were 20.0% full-width at half-maximum (FWHM) and ±5.0%, respectively, at 511 keV. The timing resolution of a single MPPC coupled to a LSO crystal was found to be 857 ps FWHM, and the value for the central region of detector module was 1182 ps FWHM when ±10% energy window was applied. The nonlinear response of a single MPPC when used to read out a single LSO was observed among the corner crystals of the proposed detector module. However, the central region of the detector module exhibits significantly less nonlinearity (6.5% for 511 keV). These results demonstrate that (1) a charge-sharing resistor network can effectively multiplex MPPC signals and reduce the number of output signals without significantly degrading the performance of a PET detector and (2) a custom light guide to permit light sharing among multiple MPPC and to diffuse and direct scintillation light can reduce the nonlinearity of the detector response within the limited dynamic range of a typical MPPC. As a result, the proposed PET detector module has the potential to be refined for use in high-resolution PET insert applications. PMID:20393236

  16. Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

    NASA Astrophysics Data System (ADS)

    Lim, Hyungkwang; Ahn, Hyung-Woo; Kornijcuk, Vladimir; Kim, Guhyun; Seok, Jun Yeong; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok

    2016-05-01

    A proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre- and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration.A proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre- and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01278g

  17. Vamistor resistor investigation

    NASA Technical Reports Server (NTRS)

    1973-01-01

    Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

  18. HIGH POWER PULSED OSCILLATOR

    DOEpatents

    Singer, S.; Neher, L.K.

    1957-09-24

    A high powered, radio frequency pulse oscillator is described for generating trains of oscillations at the instant an input direct voltage is impressed, or immediately upon application of a light pulse. In one embodiment, the pulse oscillator comprises a photo-multiplier tube with the cathode connected to the first dynode by means of a resistor, and adjacent dynodes are connected to each other through adjustable resistors. The ohmage of the resistors progressively increases from a very low value for resistors adjacent the cathode to a high value adjacent the plate, the last dynode. Oscillation occurs with this circuit when a high negative voltage pulse is applied to the cathode and the photo cathode is bombarded. Another embodiment adds capacitors at the resistor connection points of the above circuit to increase the duration of the oscillator train.

  19. High voltage DC power supply

    DOEpatents

    Droege, T.F.

    1989-12-19

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively. 7 figs.

  20. High voltage DC power supply

    DOEpatents

    Droege, Thomas F.

    1989-01-01

    A high voltage DC power supply having a first series resistor at the output for limiting current in the event of a short-circuited output, a second series resistor for sensing the magnitude of output current, and a voltage divider circuit for providing a source of feedback voltage for use in voltage regulation is disclosed. The voltage divider circuit is coupled to the second series resistor so as to compensate the feedback voltage for a voltage drop across the first series resistor. The power supply also includes a pulse-width modulated control circuit, having dual clock signals, which is responsive to both the feedback voltage and a command voltage, and also includes voltage and current measuring circuits responsive to the feedback voltage and the voltage developed across the second series resistor respectively.

  1. Solid state switch

    DOEpatents

    Merritt, B.T.; Dreifuerst, G.R.

    1994-07-19

    A solid state switch, with reverse conducting thyristors, is designed to operate at 20 kV hold-off voltage, 1,500 A peak, 1.0 [mu]s pulsewidth, and 4,500 pps, to replace thyratrons. The solid state switch is more reliable, more economical, and more easily repaired. The switch includes a stack of circuit card assemblies, a magnetic assist and a trigger chassis. Each circuit card assembly contains a reverse conducting thyristor, a resistor capacitor network, and triggering circuitry. 6 figs.

  2. Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. II. Thermal stability

    NASA Astrophysics Data System (ADS)

    Murakami, Masanori; Kim, K. K.

    1984-10-01

    In the preceding paper bilayered Au/Ti resistors were found to have excellent electrical stability during storage at room temperature after preannealing at an elevated temperature, which is essential to design logic and memory circuits of Nb/Pb-alloy Josephson junction devices. The resistors could contact directly with the Pb-alloy control lines in which Pb and In atoms which are known to intermix easily with Au atoms are contained. Since Pb and In atoms in the control lines are separated from Au atoms of the resistors by thin Ti layers, thermal stability at the contacts is a major concern for use of the Au/Ti resistor material in the Josephson devices. In the present study, surface morphology change and diffusion mechanism at the resistor/control-line contacts were studied using x-ray diffraction and scanning electron microscopy for square-shaped Au/Ti resistors covered by Pb-In layers. The samples were isothermally annealed at temperatures ranging from 353 to 423 K. The diffusion did not occur immediately after annealing at these temperatures. After the incubation period, the interdiffusion was observed to initiate at the edges of the resistors facing to the center of the cathode. Significant amounts of the In atoms in the Pb-In layers were observed to diffuse into the Au layers of the resistors, forming AuIn2 compounds under the Ti layers. By measuring growth rates of the AuIn2 layers, the diffusion coefficients and the activation energy for the layer growth were determined. Also, by analyzing changes in the In concentration in the Pb-In layers during annealing, interdiffusion coefficients of In atoms in the Pb-In layers were determined using a computer simulation technique. The activation energy was about 1.1 eV. Since these diffusion coefficients were found to be very close to those determined previously in bulk materials, the diffusion kinetics is believed to be controlled by the lattice diffusion. Based on the present results, several methods to reduce the interdiffusion between Pb-alloy and Au/Ti resistors were proposed.

  3. Linear network representation of multistate models of transport.

    PubMed Central

    Sandblom, J; Ring, A; Eisenman, G

    1982-01-01

    By introducing external driving forces in rate-theory models of transport we show how the Eyring rate equations can be transformed into Ohm's law with potentials that obey Kirchhoff's second law. From such a formalism the state diagram of a multioccupancy multicomponent system can be directly converted into linear network with resistors connecting nodal (branch) points and with capacitances connecting each nodal point with a reference point. The external forces appear as emf or current generators in the network. This theory allows the algebraic methods of linear network theory to be used in solving the flux equations for multistate models and is particularly useful for making proper simplifying approximation in models of complex membrane structure. Some general properties of linear network representation are also deduced. It is shown, for instance, that Maxwell's reciprocity relationships of linear networks lead directly to Onsager's relationships in the near equilibrium region. Finally, as an example of the procedure, the equivalent circuit method is used to solve the equations for a few transport models. PMID:7093425

  4. Mass flow sensor utilizing a resistance bridge

    NASA Technical Reports Server (NTRS)

    Fralick, Gustave C. (Inventor); Hwang, Danny P. (Inventor); Wrbanek, John D. (Inventor)

    2004-01-01

    A mass flow sensor to be mounted within a duct and measures the mass flow of a fluid stream moving through the duct. The sensor is an elongated thin quartz substrate having a plurality of platinum strips extending in a parallel relationship on the strip, with certain of the strips being resistors connected to an excitation voltage. The resistors form the legs of a Wheatstone bridge. The resistors are spaced a sufficient distance inwardly from the leading and trailing edges of the substrate to lie within the velocity recovery region so that the measured flow is the same as the actual upstream flow. The resistor strips extend at least half-way through the fluid stream to include a substantial part of the velocity profile of the stream. Certain of the resistors detect a change in temperature as the fluid stream moves across the substrate to provide an output signal from the Wheatstone bridge which is representative of the fluid flow. A heater is located in the midst of the resistor array to heat the air as it passes over the array.

  5. Automated crack detection in conductive smart-concrete structures using a resistor mesh model

    NASA Astrophysics Data System (ADS)

    Downey, Austin; D'Alessandro, Antonella; Ubertini, Filippo; Laflamme, Simon

    2018-03-01

    Various nondestructive evaluation techniques are currently used to automatically detect and monitor cracks in concrete infrastructure. However, these methods often lack the scalability and cost-effectiveness over large geometries. A solution is the use of self-sensing carbon-doped cementitious materials. These self-sensing materials are capable of providing a measurable change in electrical output that can be related to their damage state. Previous work by the authors showed that a resistor mesh model could be used to track damage in structural components fabricated from electrically conductive concrete, where damage was located through the identification of high resistance value resistors in a resistor mesh model. In this work, an automated damage detection strategy that works through placing high value resistors into the previously developed resistor mesh model using a sequential Monte Carlo method is introduced. Here, high value resistors are used to mimic the internal condition of damaged cementitious specimens. The proposed automated damage detection method is experimentally validated using a 500 × 500 × 50 mm3 reinforced cement paste plate doped with multi-walled carbon nanotubes exposed to 100 identical impact tests. Results demonstrate that the proposed Monte Carlo method is capable of detecting and localizing the most prominent damage in a structure, demonstrating that automated damage detection in smart-concrete structures is a promising strategy for real-time structural health monitoring of civil infrastructure.

  6. Low-sensitivity, frequency-selective amplifier circuits for hybrid and bipolar fabrication.

    NASA Technical Reports Server (NTRS)

    Pi, C.; Dunn, W. R., Jr.

    1972-01-01

    A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.

  7. Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport

    NASA Astrophysics Data System (ADS)

    Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I.

    2018-03-01

    We derive kinetic equations for polaron hopping in organic materials that explicitly take into account the double occupation possibility and pair intersite correlations. The equations include simplified phenomenological spin dynamics and provide a self-consistent framework for the description of the bipolaron mechanism of the organic magnetoresistance. At low applied voltages, the equations can be reduced to those for an effective resistor network that generalizes the Miller-Abrahams network and includes the effect of spin relaxation on the system resistivity. Our theory discloses the close relationship between the organic magnetoresistance and the intersite correlations. Moreover, in the absence of correlations, as in an ordered system with zero Hubbard energy, the magnetoresistance vanishes.

  8. Implementation of cost-effective diffuse light source mechanism to reduce specular reflection and halo effects for resistor-image processing

    NASA Astrophysics Data System (ADS)

    Chen, Yung-Sheng; Wang, Jeng-Yau

    2015-09-01

    Light source plays a significant role to acquire a qualified image from objects for facilitating the image processing and pattern recognition. For objects possessing specular surface, the phenomena of reflection and halo appearing in the acquired image will increase the difficulty of information processing. Such a situation may be improved by the assistance of valuable diffuse light source. Consider reading resistor via computer vision, due to the resistor's specular reflective surface it will face with a severe non-uniform luminous intensity on image yielding a higher error rate in recognition without a well-controlled light source. A measurement system including mainly a digital microscope embedded in a replaceable diffuse cover, a ring-type LED embedded onto a small pad carrying a resistor for evaluation, and Arduino microcontrollers connected with PC, is presented in this paper. Several replaceable cost-effective diffuse covers made by paper bowl, cup and box inside pasted with white paper are presented for reducing specular reflection and halo effects and compared with a commercial diffuse some. The ring-type LED can be flexibly configured to be a full or partial lighting based on the application. For each self-made diffuse cover, a set of resistors with 4 or 5 color bands are captured via digital microscope for experiments. The signal-to-noise ratio from the segmented resistor-image is used for performance evaluation. The detected principal axis of resistor body is used for the partial LED configuration to further improve the lighting condition. Experimental results confirm that the proposed mechanism can not only evaluate the cost-effective diffuse light source but also be extended as an automatic recognition system for resistor reading.

  9. A Compact 700-KV Erected Pulse Forming Network for HPM Applications (Postprint)

    DTIC Science & Technology

    2011-04-28

    previously investigated for driving rail guns , electric launchers, or other nonlinear loads albeit for much longer pulse lengths [8]. In this version...The output of the generator was connected to a coaxial CuS04 resistor through 100-ft of coaxial high-voltage cable. The current pulse on the cable was...shown in Figure 6. This pulse was delivered to a 50-ohm cable and measured by a coaxial inline CVR at the generator output. Typical pulse

  10. Sensitive method for characterizing liquid helium cooled preamplifier feedback resistors

    NASA Technical Reports Server (NTRS)

    Smeins, L. G.; Arentz, R. F.

    1983-01-01

    It is pointed out that the simple and traditional method of measuring resistance using an electrometer is ineffective since it is limited to a narrow and nonrepresentative range of terminal voltages. The present investigation is concerned with a resistor measurement technique which was developed to select and calibrate the Transimpedance Mode Amplifier (TIA) load resistors on the Infrared Astronomical Satellite (IRAS) for the wide variety of time and voltage varying signals which will be processed during the flight. The developed method has great versatility and power, and makes it possible to measure the varied and complex responses of nonideal feedback resistors to IR photo-detector currents. When employed with a stable input coupling capacitor, and a narrow band RMS voltmeter, the five input waveforms thouroughly test and calibrate all the features of interest in a load resistor and its associated TIA circuitry.

  11. Robust synchronization of spin-torque oscillators with an LCR load.

    PubMed

    Pikovsky, Arkady

    2013-09-01

    We study dynamics of a serial array of spin-torque oscillators with a parallel inductor-capacitor-resistor (LCR) load. In a large range of parameters the fully synchronous regime, where all the oscillators have the same state and the output field is maximal, is shown to be stable. However, not always such a robust complete synchronization develops from a random initial state; in many cases nontrivial clustering is observed, with a partial synchronization resulting in a quasiperiodic or chaotic mean-field dynamics.

  12. AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

    NASA Astrophysics Data System (ADS)

    Irsigler, R.; Geppert, R.; Göppert, R.; Hornung, M.; Ludwig, J.; Rogalla, M.; Runge, K.; Schmid, Th.; Söldner-Rembold, A.; Webel, M.; Weber, C.

    1998-02-01

    Full-size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3″ substrate wafers. PECVD deposited SiO 2 and {SiO 2}/{Si 3N 4} layers were used to provide coupling capacitances of 32.5 and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kΩ/□ and the thermal coefficient of resistance of less than 4 × 10 -3/°C satisfy the demands of small area biasing resistors, working on a wide temperature range.

  13. A novel pseudo resistor structure for biomedical front-end amplifiers.

    PubMed

    Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

    2015-08-01

    This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

  14. SiGe BiCMOS manufacturing platform for mmWave applications

    NASA Astrophysics Data System (ADS)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  15. Wireless remote weather monitoring system based on MEMS technologies.

    PubMed

    Ma, Rong-Hua; Wang, Yu-Hsiang; Lee, Chia-Yen

    2011-01-01

    This study proposes a wireless remote weather monitoring system based on Micro-Electro-Mechanical Systems (MEMS) and wireless sensor network (WSN) technologies comprising sensors for the measurement of temperature, humidity, pressure, wind speed and direction, integrated on a single chip. The sensing signals are transmitted between the Octopus II-A sensor nodes using WSN technology, following amplification and analog/digital conversion (ADC). Experimental results show that the resistance of the micro temperature sensor increases linearly with input temperature, with an average TCR (temperature coefficient of resistance) value of 8.2 × 10(-4) (°C(-1)). The resistance of the pressure sensor also increases linearly with air pressure, with an average sensitivity value of 3.5 × 10(-2) (Ω/kPa). The sensitivity to humidity increases with ambient temperature due to the effect of temperature on the dielectric constant, which was determined to be 16.9, 21.4, 27.0, and 38.2 (pF/%RH) at 27 °C, 30 °C, 40 °C, and 50 °C, respectively. The velocity of airflow is obtained by summing the variations in resistor response as airflow passed over the sensors providing sensitivity of 4.2 × 10(-2), 9.2 × 10(-2), 9.7 × 10(-2) (Ω/ms(-1)) with power consumption by the heating resistor of 0.2, 0.3, and 0.5 W, respectively. The passage of air across the surface of the flow sensors prompts variations in temperature among each of the sensing resistors. Evaluating these variations in resistance caused by the temperature change enables the measurement of wind direction.

  16. Pattern classification by memristive crossbar circuits using ex situ and in situ training.

    PubMed

    Alibart, Fabien; Zamanidoost, Elham; Strukov, Dmitri B

    2013-01-01

    Memristors are memory resistors that promise the efficient implementation of synaptic weights in artificial neural networks. Whereas demonstrations of the synaptic operation of memristors already exist, the implementation of even simple networks is more challenging and has yet to be reported. Here we demonstrate pattern classification using a single-layer perceptron network implemented with a memrisitive crossbar circuit and trained using the perceptron learning rule by ex situ and in situ methods. In the first case, synaptic weights, which are realized as conductances of titanium dioxide memristors, are calculated on a precursor software-based network and then imported sequentially into the crossbar circuit. In the second case, training is implemented in situ, so the weights are adjusted in parallel. Both methods work satisfactorily despite significant variations in the switching behaviour of the memristors. These results give hope for the anticipated efficient implementation of artificial neuromorphic networks and pave the way for dense, high-performance information processing systems.

  17. Pattern classification by memristive crossbar circuits using ex situ and in situ training

    NASA Astrophysics Data System (ADS)

    Alibart, Fabien; Zamanidoost, Elham; Strukov, Dmitri B.

    2013-06-01

    Memristors are memory resistors that promise the efficient implementation of synaptic weights in artificial neural networks. Whereas demonstrations of the synaptic operation of memristors already exist, the implementation of even simple networks is more challenging and has yet to be reported. Here we demonstrate pattern classification using a single-layer perceptron network implemented with a memrisitive crossbar circuit and trained using the perceptron learning rule by ex situ and in situ methods. In the first case, synaptic weights, which are realized as conductances of titanium dioxide memristors, are calculated on a precursor software-based network and then imported sequentially into the crossbar circuit. In the second case, training is implemented in situ, so the weights are adjusted in parallel. Both methods work satisfactorily despite significant variations in the switching behaviour of the memristors. These results give hope for the anticipated efficient implementation of artificial neuromorphic networks and pave the way for dense, high-performance information processing systems.

  18. Evaluation and Verification of Channel Transmission Characteristics of Human Body for Optimizing Data Transmission Rate in Electrostatic-Coupling Intra Body Communication System: A Comparative Analysis

    PubMed Central

    Tseng, Yuhwai; Su, Chauchin; Ho, Yingchieh

    2016-01-01

    Background Intra-body communication is a new wireless scheme for transmitting signals through the human body. Understanding the transmission characteristics of the human body is therefore becoming increasingly important. Electrostatic-coupling intra-body communication system in a ground-free situation that integrate electronic products that are discretely located on individuals, such as mobile phones, PDAs, wearable computers, and biomedical sensors, are of particular interest. Materials and Methods The human body is modeled as a simplified Resistor-Capacitor network. A virtual ground between the transmitter and receiver in the system is represented by a resister-capacitor network. Value of its resistance and capacitance are determined from a system perspective. The system is characterized by using a mathematical unit step function in digital baseband transmission scheme with and without Manchester code. As a result, the signal-to-noise and to-intersymbol-interference ratios are improved by manipulating the load resistor. The data transmission rate of the system is optimized. A battery-powered transmitter and receiver are developed to validate the proposal. Results A ground-free system fade signal energy especially for a low-frequency signal limited system transmission rate. The system transmission rate is maximized by simply manipulating the load resistor. Experimental results demonstrate that for a load resistance of 10k−50k Ω, the high-pass 3 dB frequency of the band-pass channel is 400kHz−2MHz in the worst-case scenario. The system allows a Manchester-coded baseband signal to be transmitted at speeds of up to 20M bit per second with signal-to-noise and signal-to-intersymbol-interference ratio of more than 10 dB. Conclusion The human body can function as a high speed transmission medium with a data transmission rate of 20Mbps in an electrostatic-coupling intra-body communication system. Therefore, a wideband signal can be transmitted directly through the human body with a good signal-to-noise quality of 10 dB if the high-pass 3 dB frequency is suitably selected. PMID:26866602

  19. Evaluation and Verification of Channel Transmission Characteristics of Human Body for Optimizing Data Transmission Rate in Electrostatic-Coupling Intra Body Communication System: A Comparative Analysis.

    PubMed

    Tseng, Yuhwai; Su, Chauchin; Ho, Yingchieh

    2016-01-01

    Intra-body communication is a new wireless scheme for transmitting signals through the human body. Understanding the transmission characteristics of the human body is therefore becoming increasingly important. Electrostatic-coupling intra-body communication system in a ground-free situation that integrate electronic products that are discretely located on individuals, such as mobile phones, PDAs, wearable computers, and biomedical sensors, are of particular interest. The human body is modeled as a simplified Resistor-Capacitor network. A virtual ground between the transmitter and receiver in the system is represented by a resister-capacitor network. Value of its resistance and capacitance are determined from a system perspective. The system is characterized by using a mathematical unit step function in digital baseband transmission scheme with and without Manchester code. As a result, the signal-to-noise and to-intersymbol-interference ratios are improved by manipulating the load resistor. The data transmission rate of the system is optimized. A battery-powered transmitter and receiver are developed to validate the proposal. A ground-free system fade signal energy especially for a low-frequency signal limited system transmission rate. The system transmission rate is maximized by simply manipulating the load resistor. Experimental results demonstrate that for a load resistance of 10k-50k Ω, the high-pass 3 dB frequency of the band-pass channel is 400kHz-2MHz in the worst-case scenario. The system allows a Manchester-coded baseband signal to be transmitted at speeds of up to 20M bit per second with signal-to-noise and signal-to-intersymbol-interference ratio of more than 10 dB. The human body can function as a high speed transmission medium with a data transmission rate of 20Mbps in an electrostatic-coupling intra-body communication system. Therefore, a wideband signal can be transmitted directly through the human body with a good signal-to-noise quality of 10 dB if the high-pass 3 dB frequency is suitably selected.

  20. For current viewing resistor loads

    DOEpatents

    Lyons, Gregory R [Tijeras, NM; Hass, Jay B [Lee's Summit, MO

    2011-04-19

    The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.

  1. Ultrabroadband Microwave Metamaterial Absorber Based on Electric SRR Loaded with Lumped Resistors

    NASA Astrophysics Data System (ADS)

    Zhao, Jingcheng; Cheng, Yongzhi

    2016-10-01

    An ultrabroadband microwave metamaterial absorber (MMA) based on an electric split-ring resonator (ESRR) loaded with lumped resistors is presented. Compared with an ESRR MMA, the composite MMA (CMMA) loaded with lumped resistors offers stronger absorption over an extremely extended bandwidth. The reflectance simulated under different substrate loss conditions indicates that incident electromagnetic (EM) wave energy is mainly consumed by the lumped resistors. The simulated surface current and power loss density distributions further illustrate the mechanism underlying the observed absorption. Further simulation results indicate that the performance of the CMMA can be tuned by adjusting structural parameters of the ESRR and lumped resistor parameters. We fabricated and measured MMA and CMMA samples. The CMMA yielded below -10 dB reflectance from 4.4 GHz to 18 GHz experimentally, with absorption bandwidth and relative bandwidth of 13.6 GHz and 121.4%, respectively. This ultrabroadband microwave absorber has potential applications in the electromagnetic energy harvesting and stealth fields.

  2. Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

    PubMed

    Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

    2013-01-01

    Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

  3. Formation of thin-film resistors on silicon substrates

    DOEpatents

    Schnable, George L.; Wu, Chung P.

    1988-11-01

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  4. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    PubMed Central

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-01-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption. PMID:27312225

  5. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    PubMed

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  6. Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

    2016-06-01

    With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

  7. Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

    NASA Astrophysics Data System (ADS)

    Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

    2016-04-01

    One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm3 size) with 22Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

  8. Analog circuit for controlling acoustic transducer arrays

    DOEpatents

    Drumheller, Douglas S.

    1991-01-01

    A simplified ananlog circuit is presented for controlling electromechanical transducer pairs in an acoustic telemetry system. The analog circuit of this invention comprises a single electrical resistor which replaces all of the digital components in a known digital circuit. In accordance with this invention, a first transducer in a transducer pair of array is driven in series with the resistor. The voltage drop across this resistor is then amplified and used to drive the second transducer. The voltage drop across the resistor is proportional and in phase with the current to the transducer. This current is approximately 90 degrees out of phase with the driving voltage to the transducer. This phase shift replaces the digital delay required by the digital control circuit of the prior art.

  9. Tunable impedance matching network fundamental limits and practical considerations

    NASA Astrophysics Data System (ADS)

    Allen, Wesley N.

    As wireless devices continue to increase in utility while decreasing in dimension, design of the RF front-end becomes more complex. It is common for a single handheld device to operate on a plethora of frequency bands, utilize multiple antennae, and be subjected to a variety of environments. One complexity in particular which arises from these factors is that of impedance mismatch. Recently, tunable impedance matching networks have begun to be implemented to address this problem. This dissertation presents the first in-depth study on the frequency tuning range of tunable impedance matching networks. Both the fundamental limitations of ideal networks as well as practical considerations for design and implementation are addressed. Specifically, distributed matching networks with a single tuning element are investigated for use with parallel resistor-capacitor and series resistor-inductor loads. Analytical formulas are developed to directly calculate the frequency tuning range TR of ideal topologies. The theoretical limit of TR for these topologies is presented and discussed. Additional formulas are developed which address limitations in transmission line characteristic impedance and varactor range. Equations to predict loss due to varactor quality factor are demonstrated and the ability of parasitics to both increase and decrease TR are shown. Measured results exemplify i) the potential to develop matching networks with a small impact from parasitics, ii) the need for accurate knowledge of parasitics when designing near transition points in optimal parameters, iii) the importance of using a transmission line with the right characteristic impedance, and iv) the ability to achieve extremely low loss at the design frequency with a lossy varactor under the right conditions (measured loss of -0.07 dB). In the area of application, tunable matching networks are designed and measured for mobile handset antennas, demonstrating up to a 3 dB improvement in power delivered to a planar inverted-F antenna and up to 4--5.6 dB improvement in power delivered to the iPhone(TM) antenna. Additionally, a single-varactor matching network is measured to achieve greater tuning range than a two-varactor matching network (> 824--960 MHz versus 850--915 MHz) and yield higher power handling. Addressing miniaturization, an accurate model of metal loss in planar integrated inductors for low-loss substrates is developed and demonstrated. Finally, immediate future research directions are suggested: i) expanding the topologies, tuning elements, and loads analyzed; ii) performing a deep study into parasitics; and iii) investigating power handling with various varactor technologies.

  10. Inexpensive Implementation of Many Strain Gauges

    NASA Technical Reports Server (NTRS)

    Berkun, Andrew C.

    2010-01-01

    It has been proposed to develop arrays of strain gauges as arrays of ordinary metal film resistors and associated electronic readout circuitry on printed circuit boards or other suitable substrates. This proposal is a by-product of a development of instrumentation utilizing metal film resistors on printed-circuit boards to measure temperatures at multiple locations. In the course of that development, it was observed that in addition to being sensitive to temperature, the metal film resistors were also sensitive to strains in the printed-circuit boards to which they were attached. Because of the low cost of ordinary metal film resistors (typically <$0.01 apiece at 2007 prices), the proposal could enable inexpensive implementation of arrays of many (e.g., 100 or more) strain gauges, possibly concentrated in small areas. For example, such an array could be designed for use as a computer keyboard with no moving parts, as a device for sensing the shape of an object resting on a surface, or as a device for measuring strains at many points on a mirror, a fuel tank, an airplane wing, or other large object. Ordinarily, the effect of strain on resistance would be regarded as a nuisance in a temperature-measuring application, and the effect of temperature on resistance would be regarded as a nuisance in a strain-measuring application. The strain-induced changes in resistance of the metal film resistors in question are less than those of films in traditional strain gauges. The main novel aspect of present proposal lies in the use of circuitry affording sufficient sensitivity to measure strain plus means for compensating for the effect of temperature. For an array of metal film resistors used as proposed, the readout circuits would include a high-accuracy analog-to-digital converter fed by a low noise current source, amplifier chain, and an analog multiplexer chain. Corrections would be provided by use of high-accuracy calibration resistors and a temperature sensor. By use of such readout circuitry, it would be possible to read the resistances of as many as 100 fixed resistors in a time interval of 1 second at a resolution much greater than 16 bits. The readout data would be processed, along with temperature calibration data, to deduce the strain on the printed-circuit board or other substrate in the areas around the resistors. It should also be possible to also deduce the temperature from the readings.

  11. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

    PubMed

    Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

    2016-02-25

    In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

  12. Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

    PubMed Central

    Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

    2016-01-01

    In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

  13. Advanced Electrical Test Techniques for LSI Microcircuits.

    DTIC Science & Technology

    1982-03-01

    high resistance polysilicon load resistors stacked in the "Z" direction for higher packing density. Featuring resistors typically in the gigaohm range...are made up of "N" diffusions, metal and/or polysilicon lines, and transistors, they are subject to leakage defects. If the leakage of the nonconducting...reference 7) show- ing a poor connection from the FF lead resistor ( Polysilicon ) to the Vcc or the transistor. The FF layout of Figure 1B shows that

  14. THE EFFECTS OF REACTOR RADIATION ON THE ELECTRICAL PROPERTIES OF ELECTRONIC COMPONENTS. PART VII. RESISTORS AND VACUUM TUBES

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Palmer, E.E.; Howell, D.

    1961-06-01

    Several types of vacuum tubes and resistors were irradiated with the Ground Test Reactor for a period of 100 hours at a power level of 1 megawatt. Data were taken on the components before, during, and after the irradiation. The vacuum tubes received a maximum radiation exposure of 8.64 x 10/sup 1//sup 5/ nf/ cm/sup 2/ and 3.9 x 10/sup 1//sup 0/ ergs/gm(C). A small increase in the average plate current was noted for all tube types. Pentodes subjected to the high-flunx field exhibited the largest percent change ( approx equal 6%) while dicdes remained relatively unaffected-at these radiation levels.more » The resistors received a maximum radiation exposure of 1.4 x 10/sup 1//sup 6/ nf/cm/sup 2/ and 6.2 x 10/ sup 1//sup 0/ ergs/gm(C). The degree of damage was dependent upon the material and type of construetion of the individual resistor types. The maximum observed change ( approx equal 6%) occurred in fixed-composition resistors. (auth)« less

  15. On the use of new generation mobile phone (smart phone) for retrospective accident dosimetry

    NASA Astrophysics Data System (ADS)

    Lee, J. I.; Chang, I.; Pradhan, A. S.; Kim, J. L.; Kim, B. H.; Chung, K. S.

    2015-11-01

    Optically stimulated luminescence (OSL) characteristics of resistors, inductors and integrated-circuit (IC) chips, extracted from new generation smart phones, were investigated for the purpose of retrospective accident dosimetry. Inductor samples were found to exhibit OSL sensitivity about 5 times and 40 times higher than that of the resistors and the IC chips, respectively. On post-irradiation storage, the resistors exhibited a much higher OSL fading (about 80 % in 36 h as compared to the value 3 min after irradiation) than IC chips (about 20 % after 36 h) and inductors (about 50 % in 36 h). Higher OSL sensitivity, linear dose response (from 8.7 mGy up to 8.9 Gy) and acceptable fading make inductors more attractive for accident dosimetry than widely studied resistors.

  16. Development of Localized Arc Filament RF Plasma Actuators for High-Speed and High Reynolds Number Flow Control

    DTIC Science & Technology

    2010-01-01

    high-speed flows is problematic due to their low forcing frequency (for mechanical actuators) and low forcing amplitude (for piezo actuators...very low fraction of DC power is coupled to the actuators (5-10%), with the rest of the power dissipated in massive ballast resistors acting as heat... resistors . The use of high-power resistors also significantly increases the weight and size of the plasma generator and makes scaling to a large number of

  17. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  18. Spreading out of perturbations in reversible reaction networks

    NASA Astrophysics Data System (ADS)

    Maslov, Sergei; Sneppen, Kim; Ispolatov, I.

    2007-08-01

    Using an example of physical interactions between proteins, we study how a perturbation propagates in the equilibrium of a network of reversible reactions governed by the law of mass action. We introduce a matrix formalism to describe the linear response of all equilibrium concentrations to shifts in total abundances of individual reactants, and reveal its heuristic analogy to the flow of electric current in a network of resistors. Our main conclusion is that, on average, the induced changes in equilibrium concentrations decay exponentially as a function of network distance from the source of perturbation. We analyze how this decay is influenced by such factors as the topology of a network, binding strength, and correlations between concentrations of neighboring nodes. We find that the minimal branching of the network, small values of dissociation constants, and low equilibrium free (unbound) concentrations of reacting substances all decrease the decay constant and thus increase the range of propagation. Exact analytic expressions for the decay constant are obtained for the case of equally strong interactions and uniform as well as oscillating concentrations on the Bethe lattice. Our general findings are illustrated using a real network of protein-protein interactions in baker's yeast with experimentally determined protein concentrations.

  19. Theory of Dielectric Breakdown in Randomly Inhomogeneous Materials

    NASA Astrophysics Data System (ADS)

    Gyure, Mark Franklin

    1990-01-01

    Two models of dielectric breakdown in disordered metal-insulator composites have been developed in an attempt to explain in detail the greatly reduced breakdown electric field observed in these materials. The first model is a two dimensional model in which the composite is treated as a random array of conducting cylinders embedded in an otherwise uniform dielectric background. The two dimensional samples are generated by the Monte Carlo method and a discretized version of the integral form of Laplace's equation is solved to determine the electric field in each sample. Breakdown is modeled as a quasi-static process by which one breakdown at a time occurs at the point of maximum electric field in the system. A cascade of these local breakdowns leads to complete dielectric failure of the system after which the breakdown field can be determined. A second model is developed that is similar to the first in terms of breakdown dynamics, but uses coupled multipole expansions of the electrostatic potential centered at each particle to obtain a more computationally accurate and faster solution to the problem of determining the electric field at an arbitrary point in a random medium. This new algorithm allows extension of the model to three dimensions and treats conducting spherical inclusions as well as cylinders. Successful implementation of this algorithm relies on the use of analytical forms for off-centered expansions of cylindrical and spherical harmonics. Scaling arguments similar to those used in theories of phase transitions are developed for the breakdown field and these arguments are discussed in context with other theories that have been developed to explain the break-down behavior of random resistor and fuse networks. Finally, one of the scaling arguments is used to predict the breakdown field for some samples of solid fuel rocket propellant tested at the China Lake Naval Weapons Center and is found to compare quite well with the experimentally measured breakdown fields.

  20. 30 CFR 75.801 - Grounding resistors.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... volts under fault conditions. The grounding resistor shall be rated for maximum fault current continuously and insulated from ground for a voltage equal to the phase-to-phase voltage of the system. ...

  1. 30 CFR 75.801 - Grounding resistors.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... volts under fault conditions. The grounding resistor shall be rated for maximum fault current continuously and insulated from ground for a voltage equal to the phase-to-phase voltage of the system. ...

  2. High level white noise generator

    DOEpatents

    Borkowski, Casimer J.; Blalock, Theron V.

    1979-01-01

    A wide band, stable, random noise source with a high and well-defined output power spectral density is provided which may be used for accurate calibration of Johnson Noise Power Thermometers (JNPT) and other applications requiring a stable, wide band, well-defined noise power spectral density. The noise source is based on the fact that the open-circuit thermal noise voltage of a feedback resistor, connecting the output to the input of a special inverting amplifier, is available at the amplifier output from an equivalent low output impedance caused by the feedback mechanism. The noise power spectral density level at the noise source output is equivalent to the density of the open-circuit thermal noise or a 100 ohm resistor at a temperature of approximately 64,000 Kelvins. The noise source has an output power spectral density that is flat to within 0.1% (0.0043 db) in the frequency range of from 1 KHz to 100 KHz which brackets typical passbands of the signal-processing channels of JNPT's. Two embodiments, one of higher accuracy that is suitable for use as a standards instrument and another that is particularly adapted for ambient temperature operation, are illustrated in this application.

  3. Passively Damped Laminated Piezoelectric Shell Structures with Integrated Electric Networks

    NASA Technical Reports Server (NTRS)

    Saravanos, Dimitris A.

    1999-01-01

    Multi-field mechanics are presented for curvilinear piezoelectric laminates interfaced with distributed passive electric components. The equations of motion for laminated piezoelectric shell structures with embedded passive electric networks are directly formulated and solved using a finite element methodology. The modal damping and frequencies of the piezoelectric shell are calculated from the poles of the system. Experimental and numerical results are presented for the modal damping and frequency of composite beams with a resistively shunted piezoceramic patch. The modal damping and frequency of plates, cylindrical shells and cylindrical composite blades with piezoelectric-resistor layers are predicted. Both analytical and experimental studies illustrate a unique dependence of modal damping and frequencies on the shunting resistance and show the effect of structural shape and curvature on piezoelectric damping.

  4. Discrete component bonding and thick film materials study. [of capacitor chips bonded with solders and conductive epoxies

    NASA Technical Reports Server (NTRS)

    Kinser, D. L.

    1976-01-01

    The bonding reliability of discrete capacitor chips bonded with solders and conductive epoxies was examined along with the thick film resistor materials consisting of iron oxide phosphate and vanadium oxide phosphates. It was concluded from the bonding reliability studies that none of the wide range of types of solders examined is capable of resisting failure during thermal cycling while the conductive epoxy gives substantially lower failure rates. The thick film resistor studies proved the feasibility of iron oxide phosphate resistor systems although some environmental sensitivity problems remain. One of these resistor compositions has inadvertently proven to be a candidate for thermistor applications because of the excellent control achieved upon the temperature coefficient of resistance. One new and potentially damaging phenomenon observed was the degradation of thick film conductors during the course of thermal cycling.

  5. Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

    NASA Technical Reports Server (NTRS)

    Buehler, M. G. (Inventor)

    1985-01-01

    An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

  6. Thermal analysis and temperature characteristics of a braking resistor for high-speed trains for changes in the braking current

    NASA Astrophysics Data System (ADS)

    Lee, Dae-Dong; Kang, Hyun-Il; Shim, Jae-Myung

    2015-09-01

    Electric brake systems are used in high-speed trains to brake trains by converting the kinetic energy of a railway vehicle to electric energy. The electric brake system consists of a regenerative braking system and a dynamic braking system. When the electric energy generated during the dynamic braking process is changed to heat through the braking resistor, the braking resistor can overheat; thus, failures can occur to the motor block. In this paper, a braking resistor for a high-speed train was used to perform thermal analyses and tests, and the results were analyzed. The analyzed data were used to estimate the dependence of the brake currents and the temperature rises on speed changes up to 300 km/h, at which a test could not be performed.

  7. Apparatus and method for recharging a string a avalanche transistors within a pulse generator

    DOEpatents

    Fulkerson, E. Stephen

    2000-01-01

    An apparatus and method for recharging a string of avalanche transistors within a pulse generator is disclosed. A plurality of amplification stages are connected in series. Each stage includes an avalanche transistor and a capacitor. A trigger signal, causes the apparatus to generate a very high voltage pulse of a very brief duration which discharges the capacitors. Charge resistors inject current into the string of avalanche transistors at various points, recharging the capacitors. The method of the present invention includes the steps of supplying current to charge resistors from a power supply; using the charge resistors to charge capacitors connected to a set of serially connected avalanche transistors; triggering the avalanche transistors; generating a high-voltage pulse from the charge stored in the capacitors; and recharging the capacitors through the charge resistors.

  8. Thin Film Electrodes for Rare Event Detectors

    NASA Astrophysics Data System (ADS)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  9. Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

    PubMed

    Li, Shu; Zhang, Tong

    2008-05-07

    Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

  10. Feed mechanism and method for feeding minute items

    DOEpatents

    Stringer, Timothy Kent; Yerganian, Simon Scott

    2012-11-06

    A feeding mechanism and method for feeding minute items, such as capacitors, resistors, or solder preforms. The mechanism is adapted to receive a plurality of the randomly-positioned and randomly-oriented extremely small or minute items, and to isolate, orient, and position the items in a specific repeatable pickup location wherefrom they may be removed for use by, for example, a computer-controlled automated assembly machine. The mechanism comprises a sliding shelf adapted to receive and support the items; a wiper arm adapted to achieve a single even layer of the items; and a pushing arm adapted to push the items into the pickup location. The mechanism can be adapted for providing the items with a more exact orientation, and can also be adapted for use in a liquid environment.

  11. Feed mechanism and method for feeding minute items

    DOEpatents

    Stringer, Timothy Kent [Bucyrus, KS; Yerganian, Simon Scott [Lee's Summit, MO

    2009-10-20

    A feeding mechanism and method for feeding minute items, such as capacitors, resistors, or solder preforms. The mechanism is adapted to receive a plurality of the randomly-positioned and randomly-oriented extremely small or minute items, and to isolate, orient, and position one or more of the items in a specific repeatable pickup location wherefrom they may be removed for use by, for example, a computer-controlled automated assembly machine. The mechanism comprises a sliding shelf adapted to receive and support the items; a wiper arm adapted to achieve a single even layer of the items; and a pushing arm adapted to push the items into the pickup location. The mechanism can be adapted for providing the items with a more exact orientation, and can also be adapted for use in a liquid environment.

  12. An energy efficient and high speed architecture for convolution computing based on binary resistive random access memory

    NASA Astrophysics Data System (ADS)

    Liu, Chen; Han, Runze; Zhou, Zheng; Huang, Peng; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng

    2018-04-01

    In this work we present a novel convolution computing architecture based on metal oxide resistive random access memory (RRAM) to process the image data stored in the RRAM arrays. The proposed image storage architecture shows performances of better speed-device consumption efficiency compared with the previous kernel storage architecture. Further we improve the architecture for a high accuracy and low power computing by utilizing the binary storage and the series resistor. For a 28 × 28 image and 10 kernels with a size of 3 × 3, compared with the previous kernel storage approach, the newly proposed architecture shows excellent performances including: 1) almost 100% accuracy within 20% LRS variation and 90% HRS variation; 2) more than 67 times speed boost; 3) 71.4% energy saving.

  13. Reliability/Maintainability/Testability Design for Dormancy

    DTIC Science & Technology

    1988-05-01

    compositions was developed thousands of years ago. It has proven to be one of the most durable and strongest substances known. It has been stated that glass can...potting or casting) ,1, Certain foamed resins and low density , hollow beady compounds can be used to reduce .eight r \\dverse l)ielectric Properties I...4.1.1.1 General Characteristics of Fixed Resistors 4.1-13 4.1.1.1.1 Fixed Composition Resistors 4.1-13 4.1.1.1.2 Fixed Film Resistors 4.1-20 4.1.1.1.3

  14. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  15. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Norwood, D.P.

    1989-01-31

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

  16. Suppression of Adverse Effects of GIC Using Controlled Variable Grounding Resistor

    NASA Astrophysics Data System (ADS)

    Abuhussein, A.; Ali, M. H.

    2016-12-01

    Geomagnetically induced current (GIC) has a harmful impact on power systems, with a large footprint. Mitigation strategies for the GIC are required to protect the integrity of the power system. To date, the adverse effects of GIC are being mitigated by either operational procedures or grounding fixed capacitors (GFCs). The operational procedures are uncertain, reduce systems' reliability, and increase energy losses. On the other hand, GFCs, incur voltage spikes, increase the transformer cost substantially, and require protection circuitry. This study investigates new possible approaches to cope with GIC, by using a controlled variable grounding resistor (CVGR), without interfering with the system's normal operation. In addition, the new techniques help suppress unsymmetrical faults in the power network. The controllability of the grounding resistor is applied using three different techniques: (1) a Parallel switch that is controlled by PI regulated duty cycle, (2) a Parallel switch that is triggered by a preset values in a look-up-table (LUT), and (3) a Mechanical resistor varied by a Fuzzy logic controller (FLC). The experimental results were obtained and validated using the MATLAB/SIMULINK software. A hypothetical power system that consists of a generator, a 765kv, 500 km long transmission lines connecting between a step-up, Δ-Yn, transformer, and a step-down, Yn-Δ, transformer, is considered. The performance of the CVGR is compared with that of the GFC under the cases of GIC event and unsymmetrical faults. From the simulation results, the following points are concluded: The CVGR effectively suppresses the GIC flowing in the system. Consequently, it protects the transformers from saturation and the rest of the system from collapsing. The CVGR also reduces the voltage and power swings associated with unsymmetrical faults and blocks the zero sequence current flowing through the neutral of the transformer. The performance of the CVGR surpasses that of the GFC in terms of GIC/fault current magnitude and decay time reduction. The GFC violates the IEEE standards C57.32/ C57.12 of transformers insulation level, while the CVGR maintain the neutral to ground voltage within acceptable levels. The CVGR, as opposed to the GFC, does not require a discharge circuit (spark gap), thus it reduces the cost and complexity.

  17. Multiphase soft switched DC/DC converter and active control technique for fuel cell ripple current elimination

    DOEpatents

    Lai, Jih-Sheng; Liu, Changrong; Ridenour, Amy

    2009-04-14

    DC/DC converter has a transformer having primary coils connected to an input side and secondary coils connected to an output side. Each primary coil connects a full-bridge circuit comprising two switches on two legs, the primary coil being connected between the switches on each leg, each full-bridge circuit being connected in parallel wherein each leg is disposed parallel to one another, and the secondary coils connected to a rectifying circuit. An outer loop control circuit that reduces ripple in a voltage reference has a first resistor connected in series with a second resistor connected in series with a first capacitor which are connected in parallel with a second capacitor. An inner loop control circuit that reduces ripple in a current reference has a third resistor connected in series with a fourth resistor connected in series with a third capacitor which are connected in parallel with a fourth capacitor.

  18. Quasi-Linear Vacancy Dynamics Modeling and Circuit Analysis of the Bipolar Memristor

    PubMed Central

    Abraham, Isaac

    2014-01-01

    The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The solution accommodates vacancy and circuit level perspectives on memristance. For the first time in literature the component resistors that constitute the contemporary dual variable resistor circuit model are quantified using vacancy parameters and derived from a governing partial differential equation. The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. The model is shown to comply with Chua's generalized equations for the memristor. Independent experimental results are used throughout, to validate the insights obtained from the model. The paper concludes by implementing a memristor-capacitor filter and compares its performance to a reference resistor-capacitor filter to demonstrate that the model is usable for practical circuit analysis. PMID:25390634

  19. Process for producing Ti-Cr-Al-O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2001-01-01

    Thin films of Ti-Cr-Al-O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti-Cr-Al-O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti-Cr-Al-O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti-Cr-Al-O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  20. TI--CR--AL--O thin film resistors

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2000-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  1. A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mi, J.; Tan, Y.; Zhang, W.

    2011-03-28

    For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it showsmore » that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.« less

  2. Quasi-linear vacancy dynamics modeling and circuit analysis of the bipolar memristor.

    PubMed

    Abraham, Isaac

    2014-01-01

    The quasi-linear transport equation is investigated for modeling the bipolar memory resistor. The solution accommodates vacancy and circuit level perspectives on memristance. For the first time in literature the component resistors that constitute the contemporary dual variable resistor circuit model are quantified using vacancy parameters and derived from a governing partial differential equation. The model describes known memristor dynamics even as it generates new insight about vacancy migration, bottlenecks to switching speed and elucidates subtle relationships between switching resistance range and device parameters. The model is shown to comply with Chua's generalized equations for the memristor. Independent experimental results are used throughout, to validate the insights obtained from the model. The paper concludes by implementing a memristor-capacitor filter and compares its performance to a reference resistor-capacitor filter to demonstrate that the model is usable for practical circuit analysis.

  3. Kirchhoff Index of Cyclopolyacenes

    NASA Astrophysics Data System (ADS)

    Wang, Yan; Zhang, Wenwen

    2010-10-01

    The resistance distance between two vertices of a connected graph G is computed as the effective resistance between them in the corresponding network constructed from G by replacing each edge with a unit resistor. The Kirchhoff index of G is the sum of resistance distances between all pairs of vertices. In this paper, following the method of Y. J. Yang and H. P. Zhang in the proof of the Kirchhoff index of the linear hexagonal chain, we obtain the Kirchhoff index of cyclopolyacenes, denoted by HRn, in terms of its Laplacian spectrum. We show that the Kirchhoff index of HRnis approximately one third of its Wiener index.

  4. Measuring Low Concentrations of Liquid Water in Soil

    NASA Technical Reports Server (NTRS)

    Buehler, Martin

    2009-01-01

    An apparatus has been developed for measuring the low concentrations of liquid water and ice in relatively dry soil samples. Designed as a prototype of instruments for measuring the liquidwater and ice contents of Lunar and Martian soils, the apparatus could also be applied similarly to terrestrial desert soils and sands. The apparatus is a special-purpose impedance spectrometer: Its design is based on the fact that the electrical behavior of a typical soil sample is well approximated by a network of resistors and capacitors in which resistances decrease and capacitances increase (and, hence, the magnitude of impedance decreases) with increasing water content.

  5. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at... stationary electrical equipment, if he finds that such exception will not pose a hazard to the miners...

  6. Method of preparing high-temperature-stable thin-film resistors

    DOEpatents

    Raymond, L.S.

    1980-11-12

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  7. N Channel JFET Based Digital Logic Gate Structure

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J (Inventor)

    2013-01-01

    An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

  8. Method of preparing high-temperature-stable thin-film resistors

    DOEpatents

    Raymond, Leonard S.

    1983-01-01

    A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

  9. Flow control using audio tones in resonant microfluidic networks: towards cell-phone controlled lab-on-a-chip devices.

    PubMed

    Phillips, Reid H; Jain, Rahil; Browning, Yoni; Shah, Rachana; Kauffman, Peter; Dinh, Doan; Lutz, Barry R

    2016-08-16

    Fluid control remains a challenge in development of portable lab-on-a-chip devices. Here, we show that microfluidic networks driven by single-frequency audio tones create resonant oscillating flow that is predicted by equivalent electrical circuit models. We fabricated microfluidic devices with fluidic resistors (R), inductors (L), and capacitors (C) to create RLC networks with band-pass resonance in the audible frequency range available on portable audio devices. Microfluidic devices were fabricated from laser-cut adhesive plastic, and a "buzzer" was glued to a diaphragm (capacitor) to integrate the actuator on the device. The AC flowrate magnitude was measured by imaging oscillation of bead tracers to allow direct comparison to the RLC circuit model across the frequency range. We present a systematic build-up from single-channel systems to multi-channel (3-channel) networks, and show that RLC circuit models predict complex frequency-dependent interactions within multi-channel networks. Finally, we show that adding flow rectifying valves to the network creates pumps that can be driven by amplified and non-amplified audio tones from common audio devices (iPod and iPhone). This work shows that RLC circuit models predict resonant flow responses in multi-channel fluidic networks as a step towards microfluidic devices controlled by audio tones.

  10. Renin-angiotensin-aldosterone system activation in long-standing type 1 diabetes

    PubMed Central

    Lovshin, Julie A.; Boulet, Geneviève; Lytvyn, Yuliya; Lovblom, Leif E.; Bjornstad, Petter; Lai, Vesta; Cham, Leslie; Tse, Josephine; Orszag, Andrej; Scarr, Daniel; Weisman, Alanna; Keenan, Hillary A.; Brent, Michael H.; Paul, Narinder; Perkins, Bruce A.; Cherney, David Z.I.

    2018-01-01

    BACKGROUND. In type 1 diabetes (T1D), adjuvant treatment with inhibitors of the renin-angiotensin-aldosterone system (RAAS), which dilate the efferent arteriole, is associated with prevention of progressive albuminuria and renal dysfunction. Uncertainty still exists as to why some individuals with long-standing T1D develop diabetic kidney disease (DKD) while others do not (DKD resistors). We hypothesized that those with DKD would be distinguished from DKD resistors by the presence of RAAS activation. METHODS. Renal and systemic hemodynamic function was measured before and after exogenous RAAS stimulation by intravenous infusion of angiotensin II (ANGII) in 75 patients with prolonged T1D durations and in equal numbers of nondiabetic controls. The primary outcome was change in renal vascular resistance (RVR) in response to RAAS stimulation, a measure of endogenous RAAS activation. RESULTS. Those with DKD had less change in RVR following exogenous RAAS stimulation compared with DKD resistors or controls (19%, 29%, 31%, P = 0.008, DKD vs. DKD resistors), reflecting exaggerated endogenous renal RAAS activation. All T1D participants had similar changes in renal efferent arteroilar resistance (9% vs. 13%, P = 0.37) irrespective of DKD status, which reflected less change versus controls (20%, P = 0.03). In contrast, those with DKD exhibited comparatively less change in afferent arteriolar vascular resistance compared with DKD resistors or controls (33%, 48%, 48%, P = 0.031, DKD vs. DKD resistors), indicating higher endogenous RAAS activity. CONCLUSION. In long-standing T1D, the intrarenal RAAS is exaggerated in DKD, which unexpectedly predominates at the afferent rather than the efferent arteriole, stimulating vasoconstriction. FUNDING. JDRF operating grant 17-2013-312. PMID:29321380

  11. High density associative memory

    NASA Technical Reports Server (NTRS)

    Moopenn, Alexander W. (Inventor); Thakoor, Anilkumar P. (Inventor); Daud, Taher (Inventor); Lambe, John J. (Inventor)

    1989-01-01

    A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

  12. Two integrator loop quadrature oscillators: A review.

    PubMed

    Soliman, Ahmed M

    2013-01-01

    A review of the two integrator loop oscillator circuits providing two quadrature sinusoidal output voltages is given. All the circuits considered employ the minimum number of capacitors namely two except one circuit which uses three capacitors. The circuits considered are classified to four different classes. The first class includes floating capacitors and floating resistors and the active building blocks realizing these circuits are the Op Amp or the OTRA. The second class employs grounded capacitors and includes floating resistors and the active building blocks realizing these circuits are the DCVC or the unity gain cells or the CFOA. The third class employs grounded capacitors and grounded resistors and the active building blocks realizing these circuits are the CCII. The fourth class employs grounded capacitors and no resistors and the active building blocks realizing these circuits are the TA. Transformation methods showing the generation of different classes from each other is given in details and this is one of the main objectives of this paper.

  13. Modeling of the Electric Characteristics of Solar Cells

    NASA Astrophysics Data System (ADS)

    Logan, Benjamin; Tzolov, Marian

    The purpose of a solar cell is to covert solar energy, through means of photovoltaic action, into a sustainable electrical current that produces usable electricity. The electrical characteristics of solar cells can be modeled to better understand how they function. As an electrical device, solar cells can be conveniently represented as an equivalent electrical circuit with an ideal diode, ideal current source for the photovoltaic action, a shunt resistor for recombination, a resistor in series to account for contact resistance, and a resistor modeling external power consumption. The values of these elements have been modified to model dark and illumination states. Fitting the model to the experimental current voltage characteristics allows to determine the values of the equivalent circuit elements. Comparing values of open circuit voltage, short circuit current, and shunt resistor can determine factors such as the amount of recombination to diagnose problems in solar cells. The many measurable quantities of a solar cell's characteristics give guidance for the design when they are related with microscopic processes.

  14. Infant breathing rate counter based on variable resistor for pneumonia

    NASA Astrophysics Data System (ADS)

    Sakti, Novi Angga; Hardiyanto, Ardy Dwi; La Febry Andira R., C.; Camelya, Kesa; Widiyanti, Prihartini

    2016-03-01

    Pneumonia is one of the leading causes of death in new born baby in Indonesia. According to WHO in 2002, breathing rate is very important index to be the symptom of pneumonia. In the Community Health Center, the nurses count with a stopwatch for exactly one minute. Miscalculation in Community Health Center occurs because of long time concentration and focus on two object at once. This calculation errors can cause the baby who should be admitted to the hospital only be attended at home. Therefore, an accurate breathing rate counter at Community Health Center level is necessary. In this work, resistance change of variable resistor is made to be breathing rate counter. Resistance change in voltage divider can produce voltage change. If the variable resistance moves periodically, the voltage will change periodically too. The voltage change counted by software in the microcontroller. For the every mm shift at the variable resistor produce average 0.96 voltage change. The software can count the number of wave generated by shifting resistor.

  15. Sensor arrays for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Freund, Michael S. (Inventor); Lewis, Nathan S. (Inventor)

    2000-01-01

    A sensor array for detecting an analyte in a fluid, comprising at least first and second chemically sensitive resistors electrically connected to an electrical measuring apparatus, wherein each of the chemically sensitive resistors comprises a mixture of nonconductive material and a conductive material. Each resistor provides an electrical path through the mixture of nonconductive material and the conductive material. The resistors also provide a difference in resistance between the conductive elements when contacted with a fluid comprising an analyte at a first concentration, than when contacted with an analyte at a second different concentration. A broad range of analytes can be detected using the sensors of the present invention. Examples of such analytes include, but are not limited to, alkanes, alkenes, alkynes, dienes, alicyclic hydrocarbons, arenes, alcohols, ethers, ketones, aldehydes, carbonyls, carbanions, polynuclear aromatics, organic derivatives, biomolecules, sugars, isoprenes, isoprenoids and fatty acids. Moreover, applications for the sensors of the present invention include, but are not limited to, environmental toxicology, remediation, biomedicine, material quality control, food monitoring and agricultural monitoring.

  16. Disassembly Properties of Cementitious Finish Joints Using an Induction Heating Method

    PubMed Central

    Ahn, Jaecheol; Noguchi, Takafumi; Kitagaki, Ryoma

    2015-01-01

    Efficient maintenance and upgrading of a building during its lifecycle are difficult because a cementitious finish uses materials and parts with low disassembly properties. Additionally, the reuse and recycling processes during building demolition also present numerous problems from the perspective of environmental technology. In this study, an induction heating (IH) method was used to disassemble cementitious finish joints, which are widely used to join building members and materials. The IH rapidly and selectively heated and weakened these joints. The temperature elevation characteristics of the cementitious joint materials were measured as a function of several resistor types, including wire meshes and punching metals, which are usually used for cementitious finishing. The disassembly properties were evaluated through various tests using conductive resistors in cementitious joints such as mortar. When steel fiber, punching metal, and wire mesh were used as conductive resistors, the cementitious modifiers could be weakened within 30 s. Cementitious joints with conductive resistors also showed complete disassembly with little residual bond strength.

  17. Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

    PubMed

    Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

    2006-05-28

    Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

  18. Atypical transistor-based chaotic oscillators: Design, realization, and diversity

    NASA Astrophysics Data System (ADS)

    Minati, Ludovico; Frasca, Mattia; OświÈ©cimka, Paweł; Faes, Luca; DroŻdŻ, Stanisław

    2017-07-01

    In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predominantly anti-persistent monofractal dynamics. Notably, we recurrently found a circuit comprising one resistor, one transistor, two inductors, and one capacitor, which generates a range of attractors depending on the parameter values. We also found a circuit yielding an irregular quantized spike-train resembling some aspects of neural discharge and another one generating a double-scroll attractor, which represent the smallest known transistor-based embodiments of these behaviors. Through three representative examples, we additionally show that diffusive coupling of heterogeneous oscillators of this kind may give rise to complex entrainment, such as lag synchronization with directed information transfer and generalized synchronization. The replicability and reproducibility of the experimental findings are good.

  19. Atypical transistor-based chaotic oscillators: Design, realization, and diversity.

    PubMed

    Minati, Ludovico; Frasca, Mattia; Oświȩcimka, Paweł; Faes, Luca; Drożdż, Stanisław

    2017-07-01

    In this paper, we show that novel autonomous chaotic oscillators based on one or two bipolar junction transistors and a limited number of passive components can be obtained via random search with suitable heuristics. Chaos is a pervasive occurrence in these circuits, particularly after manual adjustment of a variable resistor placed in series with the supply voltage source. Following this approach, 49 unique circuits generating chaotic signals when physically realized were designed, representing the largest collection of circuits of this kind to date. These circuits are atypical as they do not trivially map onto known topologies or variations thereof. They feature diverse spectra and predominantly anti-persistent monofractal dynamics. Notably, we recurrently found a circuit comprising one resistor, one transistor, two inductors, and one capacitor, which generates a range of attractors depending on the parameter values. We also found a circuit yielding an irregular quantized spike-train resembling some aspects of neural discharge and another one generating a double-scroll attractor, which represent the smallest known transistor-based embodiments of these behaviors. Through three representative examples, we additionally show that diffusive coupling of heterogeneous oscillators of this kind may give rise to complex entrainment, such as lag synchronization with directed information transfer and generalized synchronization. The replicability and reproducibility of the experimental findings are good.

  20. Driver for solar cell I-V characteristic plots

    NASA Technical Reports Server (NTRS)

    Turner, G. B. (Inventor)

    1980-01-01

    A bipolar voltage ramp generator which applies a linear voltage through a resistor to a solar cell for plotting its current versus voltage (I-V) characteristic between short circuit and open circuit conditions is disclosed. The generator has automatic stops at the end points. The resistor serves the multiple purpose of providing a current sensing resistor, setting the full-scale current value, and providing a load line with a slope approximately equal to one, such that it will pass through the origin and the approximate center of the I-V curve with about equal distance from that center to each of the end points.

  1. Precision absolute-value amplifier for a precision voltmeter

    DOEpatents

    Hearn, W.E.; Rondeau, D.J.

    1982-10-19

    Bipolar inputs are afforded by the plus inputs of first and second differential input amplifiers. A first gain determining resistor is connected between the minus inputs of the differential amplifiers. First and second diodes are connected between the respective minus inputs and the respective outputs of the differential amplifiers. First and second FETs have their gates connected to the outputs of the amplifiers, while their respective source and drain circuits are connected between the respective minus inputs and an output lead extending to a load resistor. The output current through the load resistor is proportional to the absolute value of the input voltage difference between the bipolar input terminals. A third differential amplifier has its plus input terminal connected to the load resistor. A second gain determining resistor is connected between the minus input of the third differential amplifier and a voltage source. A third FET has its gate connected to the output of the third amplifier. The source and drain circuit of the third transistor is connected between the minus input of the third amplifier and a voltage-frequency converter, constituting an output device. A polarity detector is also provided, comprising a pair of transistors having their inputs connected to the outputs of the first and second differential amplifiers. The outputs of the polarity detector are connected to gates which switch the output of the voltage-frequency converter between up and down counting outputs.

  2. Demonstration of KHILS two-color IR projection capability

    NASA Astrophysics Data System (ADS)

    Jones, Lawrence E.; Coker, Jason S.; Garbo, Dennis L.; Olson, Eric M.; Murrer, Robert Lee, Jr.; Bergin, Thomas P.; Goldsmith, George C., II; Crow, Dennis R.; Guertin, Andrew W.; Dougherty, Michael; Marler, Thomas M.; Timms, Virgil G.

    1998-07-01

    For more than a decade, there has been considerable discussion about using different IR bands for the detection of low contrast military targets. Theory predicts that a target can have little to no contrast against the background in one IR band while having a discernible signature in another IR band. A significant amount of effort has been invested towards establishing hardware that is capable of simultaneously imaging in two IR bands to take advantage of this phenomenon. Focal plane arrays (FPA) are starting to materialize with this simultaneous two-color imaging capability. The Kinetic Kill Vehicle Hardware-in-the-loop Simulator (KHILS) team of the Air Force Research Laboratory and the Guided Weapons Evaluation Facility (GWEF), both at Eglin AFB, FL, have spent the last 10 years developing the ability to project dynamic IR scenes to imaging IR seekers. Through the Wideband Infrared Scene Projector (WISP) program, the capability to project two simultaneous IR scenes to a dual color seeker has been established at KHILS. WISP utilizes resistor arrays to produce the IR energy. Resistor arrays are not ideal blackbodies. The projection of two IR colors with resistor arrays, therefore, requires two optically coupled arrays. This paper documents the first demonstration of two-color simultaneous projection at KHILS. Agema cameras were used for the measurements. The Agema's HgCdTe detector has responsivity from 4 to 14 microns. A blackbody and two IR filters (MWIR equals 4.2 t 7.4 microns, LWIR equals 7.7 to 13 microns) were used to calibrate the Agema in two bands. Each filter was placed in front of the blackbody one at a time, and the temperature of the blackbody was stepped up in incremental amounts. The output counts from the Agema were recorded at each temperature. This calibration process established the radiance to Agema output count curves for the two bands. The WISP optical system utilizes a dichroic beam combiner to optically couple the two resistor arrays. The transmission path of the beam combiner provided the LWIR (6.75 to 12 microns), while the reflective path produced the MWIR (3 to 6.5 microns). Each resistor array was individually projected into the Agema through the beam combiner at incremental output levels. Once again the Agema's output counts were recorded at each resistor array output level. These projections established the resistor array output to Agema count curves for the MWIR and LWIR resistor arrays. Using the radiance to Agema counts curves, the MWIR and LWIR resistor array output to radiance curves were established. With the calibration curves established, a two-color movie was projected and compared to the generated movie radiance values. By taking care to correctly account for the spectral qualities of the Agema camera, the calibration filters, and the diachroic beam combiner, the projections matched the theoretical calculations. In the near future, a Lockheed- Martin Multiple Quantum Well camera with true two-color IR capability will be tested.

  3. Experimental Observation of Two Features Unexpected from the Classical Theories of Rubber Elasticity

    NASA Astrophysics Data System (ADS)

    Nishi, Kengo; Fujii, Kenta; Chung, Ung-il; Shibayama, Mitsuhiro; Sakai, Takamasa

    2017-12-01

    Although the elastic modulus of a Gaussian chain network is thought to be successfully described by classical theories of rubber elasticity, such as the affine and phantom models, verification experiments are largely lacking owing to difficulties in precisely controlling of the network structure. We prepared well-defined model polymer networks experimentally, and measured the elastic modulus G for a broad range of polymer concentrations and connectivity probabilities, p . In our experiment, we observed two features that were distinct from those predicted by classical theories. First, we observed the critical behavior G ˜|p -pc|1.95 near the sol-gel transition. This scaling law is different from the prediction of classical theories, but can be explained by analogy between the electric conductivity of resistor networks and the elasticity of polymer networks. Here, pc is the sol-gel transition point. Furthermore, we found that the experimental G -p relations in the region above C* did not follow the affine or phantom theories. Instead, all the G /G0-p curves fell onto a single master curve when G was normalized by the elastic modulus at p =1 , G0. We show that the effective medium approximation for Gaussian chain networks explains this master curve.

  4. Analog hardware implementation of neocognitron networks

    NASA Astrophysics Data System (ADS)

    Inigo, Rafael M.; Bonde, Allen, Jr.; Holcombe, Bradford

    1990-08-01

    This paper deals with the analog implementation of neocognitron based neural networks. All of Fukushima''s and related work on the neocognitron is based on digital computer simulations. To fully take advantage of the power of this network paradigm an analog electronic approach is proposed. We first implemented a 6-by-6 sensor network with discrete analog components and fixed weights. The network was given weight values to recognize the characters U L and F. These characters are recognized regardless of their location on the sensor and with various levels of distortion and noise. The network performance has also shown an excellent correlation with software simulation results. Next we implemented a variable weight network which can be trained to recognize simple patterns by means of self-organization. The adaptable weights were implemented with PETs configured as voltage-controlled resistors. To implement a variable weight there must be some type of " memory" to store the weight value and hold it while the value is reinforced or incremented. Two methods were evaluated: an analog sample-hold circuit and a digital storage scheme using binary counters. The latter is preferable for VLSI implementation because it uses standard components and does not require the use of capacitors. The analog design and implementation of these small-scale networks demonstrates the feasibility of implementing more complicated ANNs in electronic hardware. The circuits developed can also be designed for VLSI implementation. 1.

  5. Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

    NASA Technical Reports Server (NTRS)

    Brown, G. A.; Harrap, V.

    1971-01-01

    Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

  6. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... 30 Mineral Resources 1 2013-07-01 2013-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

  7. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

  8. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

  9. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... 30 Mineral Resources 1 2012-07-01 2012-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

  10. 30 CFR 77.901-1 - Grounding resistor; continuous current rating.

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... 30 Mineral Resources 1 2014-07-01 2014-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901-1 Grounding...

  11. Reconstruction of ensembles of coupled time-delay systems from time series.

    PubMed

    Sysoev, I V; Prokhorov, M D; Ponomarenko, V I; Bezruchko, B P

    2014-06-01

    We propose a method to recover from time series the parameters of coupled time-delay systems and the architecture of couplings between them. The method is based on a reconstruction of model delay-differential equations and estimation of statistical significance of couplings. It can be applied to networks composed of nonidentical nodes with an arbitrary number of unidirectional and bidirectional couplings. We test our method on chaotic and periodic time series produced by model equations of ensembles of diffusively coupled time-delay systems in the presence of noise, and apply it to experimental time series obtained from electronic oscillators with delayed feedback coupled by resistors.

  12. Design and evaluation of a GaAs MMIC X-band active RC quadrature power divider

    NASA Astrophysics Data System (ADS)

    Henkus, J. C.

    1991-03-01

    The design and evaluation of a GaAs MMIC (Microwave Monolithic Integrated Circuit) X-band active RC Quadrature Power Divider (QPD) is addressed. This QPD can be used as part of a vector modulator. The chosen QPD topology consists of two active first order RC all pass networks and was converted into an MMIC design. The design is completely symmetrical except for two key resistors. On-wafer S parameter measurements were carried out; a special probe head configuration was composed in order to avoid measurement accuracy degradation associated with the reversal of the active output of the QPD. The measured nominal RF behavior of the chips complies with the simulated behavior to a very high degree. The optical, DC, and RF yield is very large (97, 83, and 74 percent respectively). A modification to Takashi's all pass network was proposed which offers gain/frequency slope control and compensation ability.

  13. Characterization of feedback resistors for cryogenic applications

    NASA Technical Reports Server (NTRS)

    Lakew, B.; Moseley, S. H.; Silverberg, R. F.

    1989-01-01

    Results are presented on the testing of feedback resistors selected for use in the transimpedance amplifiers (TIAs) in the Diffuse Infrared Background Experiment (DIRBE) to be flown on the NASA's Cosmic Background Explorer satellite planned for a launch in 1989. The resistors without encapsulation were found to be reliable as cryogenic circuit elements. Their resistance is sufficiently high (so that their Johnson noise does not dominate amplifier noise at the signal frequency), and they are sufficiently linear; no correction need to be made for signals up to 1.5 V, the 100,000 signal-to-noise level for the DIRBE, which covers most of the signals expected to be seen on the sky.

  14. Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

    NASA Astrophysics Data System (ADS)

    Nishikata, Daisuke; Ali, Mohammad Alimudin Bin Mohd; Hosoda, Kento; Matsumoto, Hiroshi; Nakamura, Kazuyuki

    2018-04-01

    A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors.

  15. Negative feedback avalanche diode

    NASA Technical Reports Server (NTRS)

    Itzler, Mark Allen (Inventor)

    2010-01-01

    A single-photon avalanche detector is disclosed that is operable at wavelengths greater than 1000 nm and at operating speeds greater than 10 MHz. The single-photon avalanche detector comprises a thin-film resistor and avalanche photodiode that are monolithically integrated such that little or no additional capacitance is associated with the addition of the resistor.

  16. Physical Analysis of an Electric Resistor Heating

    ERIC Educational Resources Information Center

    Perea Martins, J. E. M.

    2018-01-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

  17. Connecting Time and Frequency in the RC Circuit

    ERIC Educational Resources Information Center

    Moya, A. A.

    2017-01-01

    Charging and discharging processes of a capacitor through a resistor, as well as the concept of impedance in alternating current circuits, are topics covered in introductory physics courses. The experimental study of the charge and discharge of a capacitor through a resistor is a well-established lab exercise that is used to introduce concepts…

  18. RuO2 Thermometer for Ultra-Low Temperatures

    NASA Technical Reports Server (NTRS)

    Hait, Thomas; Shirron, Peter J.; DiPirro, Michael

    2009-01-01

    A small, high-resolution, low-power thermometer has been developed for use in ultra-low temperatures that uses multiple RuO2 chip resistors. The use of commercially available thick-film RuO2 chip resistors for measuring cryogenic temperatures is well known due to their low cost, long-term stability, and large resistance change.

  19. Thick film hydrogen sensor

    DOEpatents

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  20. Thick film hydrogen sensor

    DOEpatents

    Hoffheins, B.S.; Lauf, R.J.

    1995-09-19

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

  1. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Severin, Erik (Inventor)

    1998-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  2. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Severin, Erik (Inventor); Lewis, Nathan S. (Inventor)

    2001-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  3. Sensors for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Severin, Erik (Inventor)

    1999-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g., electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  4. Sensor arrays for detecting analytes in fluids

    NASA Technical Reports Server (NTRS)

    Lewis, Nathan S. (Inventor); Freund, Michael S. (Inventor)

    1996-01-01

    Chemical sensors for detecting analytes in fluids comprise first and second conductive elements (e.g. electrical leads) electrically coupled to and separated by a chemically sensitive resistor which provides an electrical path between the conductive elements. The resistor comprises a plurality of alternating nonconductive regions (comprising a nonconductive organic polymer) and conductive regions (comprising a conductive material) transverse to the electrical path. The resistor provides a difference in resistance between the conductive elements when contacted with a fluid comprising a chemical analyte at a first concentration, than when contacted with a fluid comprising the chemical analyte at a second different concentration. Arrays of such sensors are constructed with at least two sensors having different chemically sensitive resistors providing dissimilar such differences in resistance. Variability in chemical sensitivity from sensor to sensor is provided by qualitatively or quantitatively varying the composition of the conductive and/or nonconductive regions. An electronic nose for detecting an analyte in a fluid may be constructed by using such arrays in conjunction with an electrical measuring device electrically connected to the conductive elements of each sensor.

  5. Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

    PubMed

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

    2016-07-22

    The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

  6. Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor

    PubMed Central

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

    2016-01-01

    The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations. PMID:27455271

  7. Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

    PubMed

    Chang, Kuo-Tsai

    2007-01-01

    This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

  8. Teaching Resistance through an interactive gaming lab

    NASA Astrophysics Data System (ADS)

    O'Brien, James G.; Sirokman, Greg; Rueckert, Franz; Cascio, Derek

    2015-04-01

    The use of gaming as an educational tool has proven to be an effective paradigm in modern pedagogy. Following the success of their previous work ``Sector Vector,'' the authors present a new interactive game-based laboratory to highlight the basic manipulation and calculation of resistors in circuits. ``Resistance is Futile'' delivers the lesson of basic resistor combinations in a game based exercise where teams build a continually evolving circuit. As the game progresses, students must develop long and short term plans to modify an ever-changing circuit and meet primary and secondary objectives. Each turn requires quick calculations of resistor combinations and the assessment of future options. Students are also exposed to the creation of a modular circuit, which may not conform to standard textbook examples. To determine a winner, the students work together to analyze and evaluate a potentially complex final circuit diagram. The dynamic atmosphere and competitive nature established by the gaming environment have been shown to increase student engagement and concept retention. In this presentation, we will discuss both the structure of the lab-based game and the pedagogical implications this implementation versus the traditional resistor combination laboratory exercise.

  9. Array of Chemosensitive Resistors with Composites of Gas Chromatography (GC) Materials and Carbon Black for Detection and Recognition of VOCs: A Basic Study

    PubMed Central

    Wyszynski, Bartosz; Yatabe, Rui; Nakao, Atsuo; Nakatani, Masaya; Oki, Akio; Oka, Hiroaki; Toko, Kiyoshi

    2017-01-01

    Mimicking the biological olfaction, large odor-sensor arrays can be used to acquire a broad range of chemical information, with a potentially high degree of redundancy, to allow for enhanced control over the sensitivity and selectivity of artificial olfaction systems. The arrays should consist of the largest possible number of individual sensing elements while being miniaturized. Chemosensitive resistors are one of the sensing platforms that have a potential to satisfy these two conditions. In this work we test viability of fabricating a 16-element chemosensitive resistor array for detection and recognition of volatile organic compounds (VOCs). The sensors were fabricated using blends of carbon black and gas chromatography (GC) stationary-phase materials preselected based on their sorption properties. Blends of the selected GC materials with carbon black particles were subsequently coated over chemosensitive resistor devices and the resulting sensors/arrays evaluated in exposure experiments against vapors of pyrrole, benzenal, nonanal, and 2-phenethylamine at 150, 300, 450, and 900 ppb. Responses of the fabricated 16-element array were stable and differed for each individual odorant sample, proving the blends of GC materials with carbon black particles can be effectively used for fabrication of large odor-sensing arrays based on chemosensitive resistors. The obtained results suggest that the proposed sensing devices could be effective in discriminating odor/vapor samples at the sub-ppm level. PMID:28696353

  10. High-precision ID-TIMS zircon U-Pb geochronology using new 1013 Ohm resistors

    NASA Astrophysics Data System (ADS)

    Von Quadt, A.; Buret, Y.; Large, S.; Peytcheva, I.; Trinquier, A.; Wotzlaw, J. F.

    2015-12-01

    Faraday cups equipped with high gain amplifiers provide a means to measure small ion beams in static mode without the limited linear range of ion counting systems. We tested the application of newly available 1013 Ohm resistors to ID-TIMS zircon U-Pb geochronology using a range of natural and synthetic reference materials. The TritonPlus-RPQ at the Institute of Geochemistry and Petrology, ETH Zurich, is equipped with five new 1013 Ohm resistors and one MasCom secondary electron multiplier, allowing to measure the 202-204-205-206-207-208Pb masses in static mode. U is measured subsequently as U-oxide (265-267-270UO2) during a second step, also in static Faraday mode. The gain calibration of the 1013 Ohm resistors was performed using the procedure of Trinquier (2014), with 144Nd-146Nd being measured using 1011 Ohm resistor and 142-143-145-148-150Nd being measured using 1013 Ohm resitors (Trinquier, 2014; Koornneef et al., 2014). Standard deviations of the noise in all five new 1013 Ohm resistors are lower than 5.0 x 10-6 over a 6 month period, with no shift occurring over this time interval. This new detector set-up was tested by analyzing natural zircon standard materials and synthetic U/Pb solutions (www.earthime.org), ranging in age from ~2 Ma to ~600 Ma. All natural zircon standards were chemically abraded (Mattinson, 2005) and all samples were spiked with the ET2535 tracer solution. U-Pb dates obtained using the static measurement routine are compared to measurements employing dynamic peak jumping routines on the MasCom multiplier. This study illustrates the benefits and current limitations of using high gain amplifiers to measure small ion beams for zircon U-Pb geochronology compared to conventional dynamic ion counting techniques. Mattinson, J.M. (2005) Chemical Geology 220:47-66; Trinquier, A. (2014) Application Note 30281; Koornneef, J. et al (2014) Analytica Chimica Acta 819:49-55.

  11. Integral resistors and capacitors for mixed-signal packages using electroless plating and polymer-ceramic nanocomposites

    NASA Astrophysics Data System (ADS)

    Chahal, Premjeet

    In this work, new approaches to achieving integral resistors and capacitors on large area substrates at low temperatures in a high density wiring (HDW) environment using non-vacuum deposition techniques are introduced. This includes the use of polymer-ceramic nanocomposites for integral capacitors and electroless plating for integral resistors. From the literature review it is believed that resistors in the range of 5--50 ohm/square and capacitors in the range of 1--20 nF/cm2 can satisfy most of the mixed-signal application needs. The proposed materials can satisfy this need as demonstrated in this work. Several test vehicles were fabricated and measured to characterize the material properties, and demonstrate conventional and novel circuits for mixed-signal applications. To begin with, several polymer-ceramic combinations were analyzed under varying conditions to gain a fundamental understanding of the material system. Experimental advances have been made to achieve high dielectric constant values for both epoxy-ceramic and polyimide-ceramic systems. These material systems in general can satisfy specific capacitances in the range of 1--22 nF/cm2. These materials were found to be stable into the GHz range and have low loss-tangent. For electroless resistors, several plating baths were studied and a combination of Ni-P/Ni-W-P was found to produce the best results. Uniform plating was achieved through better nucleation of PdCl2 catalyst through the use of organosilane surface treatment. The Ni-P/Ni-W-P films produced sheet resistance in the range of 5--50 ohm/square and TCR below 50 ppm/°C. The material is stable into the GHz range. Upon optimizing the electrical properties and processing of capacitors and resistors, several test vehicles were fabricated to demonstrate some conventional and novel passive structures for RF and mixed-signal applications (e.g., filters, delay lines, etc.). Some of the structures were modeled using MDS and PSPICE and a good correlation between measured and modeled results were obtained. Capacitors on large area PWB substrates using meniscus coating are also demonstrated with a typical capacitance of 10 nF/cm2. The yield of the capacitor structures is found to be affected by the surface roughness of the bottom copper electrode. Resistors have been demonstrated on 6″ x 6″ substrates using a simple set-up.

  12. Physical analysis of an electric resistor heating

    NASA Astrophysics Data System (ADS)

    Perea Martins, J. E. M.

    2018-05-01

    This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

  13. Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

    ERIC Educational Resources Information Center

    Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

    2008-01-01

    An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

  14. Johnson noise measurements of a 3.1 k Ω resistor at mK temperatures using a SQUID-based circuit

    NASA Astrophysics Data System (ADS)

    Shingla, Vidhi; Kleinbaum, Ethan; Csáthy, Gábor

    The measurement of Johnson noise of resistors of the order of a k Ω at mK temperatures is a difficult task. Such a measurement is not possible with room temperature amplifiers since the typical amplifier noise exceeds the Johnson noise. Such measurements are, however, possible with circuits based on cooled High Electron Mobility Transistors (HEMTs). We present an alternative circuit for such measurements which is based on a dc SQUID. We demonstrate that our circuit does not contribute appreciable noise to the Johnson noise of a 3 . 1 k Ω resistor down to 16 mK, enabling therefore Johnson noise thermometry. This work was supported by the NSF Grant DMR-1505866.

  15. Model of lightning strike to a steel reinforce structure using PSpice

    NASA Astrophysics Data System (ADS)

    Koone, Neil; Condren, Brian

    2003-03-01

    Surges and arcs from lightning can pose hazards to personnel and sensitive equipment and processes. Steel reinforcement in structures can act as a Faraday cage mitigating lightning effects. Knowing a structure's response to a lightning strike allows hazards associated with lightning to be analyzed. A model of lightning's response in a steel reinforced structure has been developed using PSpice (a commercial circuit simulation). Segments of rebar are modeled as inductors and resistors in series. A program has been written to take architectural information of a steel reinforced structure and "build" a circuit network that is analogous to the network of reinforcement in a facility. A severe current waveform (simulating a 99th percentile lightning strike), modeled as a current source, is introduced in the circuit network, and potential differences within the structure are determined using PSpice. A visual three-dimensional model of the facility displays the voltage distribution across the structure using color to indicate the potential difference relative to the floor. Clear air arcing distances can be calculated from the voltage distribution using a conservative value for the dielectric breakdown strength of air.

  16. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Haslam, J J; Wall, M A; Johnson, D L

    We have measured and modeled the change in electrical resistivity due to partial transformation to the martensitic {alpha}{prime}-phase in a {delta}-phase Pu-Ga matrix. The primary objective is to relate the change in resistance, measured with a 4-probe technique during the transformation, to the volume fraction of the {alpha}{prime} phase created in the microstructure. Analysis by finite element methods suggests that considerable differences in the resistivity may be anticipated depending on the orientational and morphological configurations of the {alpha}{prime} particles. Finite element analysis of the computed resistance of an assembly of lenticular shaped particles indicates that series resistor or parallel resistormore » approximations are inaccurate and can lead to an underestimation of the predicted amount of {alpha}{prime} in the sample by 15% or more. Comparison of the resistivity of a simulated network of partially transformed grains or portions of grains suggests that a correction to the measured resistivity allows quantification of the amount of {alpha}{prime} phase in the microstructure with minimal consideration of how the {alpha}{prime} morphology may evolve. It is found that the average of the series and parallel resistor approximations provide the most accurate relationship between the measured resistivity and the amount of {alpha}{prime} phase. The methods described here are applicable to any evolving two-phase microstructure in which the resistance difference between the two phases is measurable.« less

  17. Room-temperature antiferromagnetic memory resistor.

    PubMed

    Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

    2014-04-01

    The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

  18. EMP Preferred Test Procedures. Revision

    DTIC Science & Technology

    1977-02-01

    r _ -P ~PREFERRED TEST PROCEDURES,r- -Hnbo -Tkeltted Elec-ront’c Parts) .... . ITR Projs.E6230,E6261, J.E. Bridges W.C. Emberson V.P. Nanda DNA QQ-72...Connectors Surface Transfer Impedance Shielded Enclosures Surface Transfer Admittance Shielded Rooms E- Field Shielding Conduits Effectiveness Resistor Damage H... Field Shielding Capacitor Damage Effectiveness Inductor Damage Conduit Couplers Transformer Damage Capacitor Characterization Resistor

  19. Optimization of Nanowire-Resistance Load Logic Inverter.

    PubMed

    Hashim, Yasir; Sidek, Othman

    2015-09-01

    This study is the first to demonstrate characteristics optimization of nanowire resistance load inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on resistance value. Increasing of load resistor tends to increasing in noise margins until saturation point, increasing load resistor after this point will not improve noise margins significantly.

  20. Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

    NASA Astrophysics Data System (ADS)

    Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

    2017-12-01

    Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

  1. Reduction of characteristic RL time for fast, efficient magnetic levitation

    NASA Astrophysics Data System (ADS)

    Li, Yuqing; Feng, Guosheng; Wang, Xiaofeng; Wu, Jizhou; Ma, Jie; Xiao, Liantuan; Jia, Suotang

    2017-09-01

    We demonstrate the reduction of characteristic time in resistor-inductor (RL) circuit for fast, efficient magnetic levitation according to Kirchhoff's circuit laws. The loading time is reduced by a factor of ˜4 when a high-power resistor is added in series with the coils. By using the controllable output voltage of power supply and voltage of feedback circuit, the loading time is further reduced by ˜ 3 times. The overshoot loading in advance of the scheduled magnetic field gradient is equivalent to continuously adding a resistor without heating. The magnetic field gradient with the reduced loading time is used to form the upward magnetic force against to the gravity of the cooled Cs atoms, and we obtain an effectively levitated loading of the Cs atoms to a crossed optical dipole trap.

  2. Shaper design in CMOS for high dynamic range

    DOEpatents

    De Geronimo, Gianluigi; Li, Shaorui

    2015-06-30

    An analog filter is presented that comprises a chain of filter stages, a feedback resistor for providing a negative feedback, and a feedback capacitor for providing a positive feedback. Each filter stage has an input node and an output node. The output node of a filter stage is connected to the input node of an immediately succeeding filter stage through a resistor. The feedback resistor has a first end connected to the output node of the last filter stage along the chain of filter stages, and a second end connected to the input node of a first preceding filter stage. The feedback capacitor has a first end connected to the output node of one of the chain of filter stages, and a second end connected to the input node of a second preceding filter stage.

  3. Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

    ERIC Educational Resources Information Center

    Kamata, Masahiro; Abe, Mayumi

    2012-01-01

    A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

  4. Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J.

    2008-01-01

    Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

  5. TaN resistor process development and integration.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Romero, Kathleen; Martinez, Marino John; Clevenger, Jascinda

    This paper describes the development and implementation of an integrated resistor process based on reactively sputtered tantalum nitride. Image reversal lithography was shown to be a superior method for liftoff patterning of these films. The results of a response surface DOE for the sputter deposition of the films are discussed. Several approaches to stabilization baking were examined and the advantages of the hot plate method are shown. In support of a new capability to produce special-purpose HBT-based Small-Scale Integrated Circuits (SSICs), we developed our existing TaN resistor process, designed for research prototyping, into one with greater maturity and robustness. Includedmore » in this work was the migration of our TaN deposition process from a research-oriented tool to a tool more suitable for production. Also included was implementation and optimization of a liftoff process for the sputtered TaN to avoid the complicating effects of subtractive etching over potentially sensitive surfaces. Finally, the method and conditions for stabilization baking of the resistors was experimentally determined to complete the full implementation of the resistor module. Much of the work to be described involves the migration between sputter deposition tools - from a Kurt J. Lesker CMS-18 to a Denton Discovery 550. Though they use nominally the same deposition technique (reactive sputtering of Ta with N{sup +} in a RF-excited Ar plasma), they differ substantially in their design and produce clearly different results in terms of resistivity, conformity of the film and the difference between as-deposited and stabilized films. We will describe the design of and results from the design of experiments (DOE)-based method of process optimization on the new tool and compare this to what had been used on the old tool.« less

  6. Logarithmic circuit with wide dynamic range

    NASA Technical Reports Server (NTRS)

    Wiley, P. H.; Manus, E. A. (Inventor)

    1978-01-01

    A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

  7. Photovoltaic spatial solitons affected by a resistor in the external circuit

    NASA Astrophysics Data System (ADS)

    Wang, Xiao Sheng; She, Wei Long

    2002-09-01

    We have found that the FWHM of one-dimensional photovoltaic spatial soliton is modified by the space-charge field in the crystal, which can be controlled by a resistor in the external circuit. In this case, the photovoltaic contribution of a background beam is taken into account. In a crystal with a positive perturbation of refractive index, the FWHM of dark soliton decreases with the resistance of the resistor, while the FWHM of bright soliton increases with the resistance. Furthermore, when R (the ratio of the effective Glass constant of a signal beam over a background beam) is higher than 1, we can switch a dark soliton to a bright soliton by decreasing the resistance or vice versa. During such process, both the wavelengths and the intensities of the signal beam and the background beam are kept unchanged.

  8. Discrete component bonding and thick film materials study

    NASA Technical Reports Server (NTRS)

    Kinser, D. L.

    1975-01-01

    The results are summarized of an investigation of discrete component bonding reliability and a fundamental study of new thick film resistor materials. The component bonding study examined several types of solder bonded components with some processing variable studies to determine their influence upon bonding reliability. The bonding reliability was assessed using the thermal cycle: 15 minutes at room temperature, 15 minutes at +125 C 15 minutes at room temperature, and 15 minutes at -55 C. The thick film resistor materials examined were of the transition metal oxide-phosphate glass family with several elemental metal additions of the same transition metal. These studies were conducted by preparing a paste of the subject composition, printing, drying, and firing using both air and reducing atmospheres. The resulting resistors were examined for adherence, resistance, thermal coefficient of resistance, and voltage coefficient of resistance.

  9. Note: Novel trigger pulse feed method for mega-volt gas switch.

    PubMed

    Yin, Jiahui; Sun, Fengju; Jiang, Xiaofeng; Wang, Zhiguo; Liang, Tianxue; Jiang, Hongyu; Qiu, Aici

    2017-07-01

    It is difficult to feed the trigger pulse into an electrically triggered mega-volt switch, and the present note presents a novel trigger pulse feed method. The trigger pulse is introduced via a damping resistor, which is mounted between the inner and outer cylindrical electrodes of the pulse transmission line. The mega-volt pulse is damped because the voltage is resistively divided by the resistor and trigger cable arrangement. Both the complex breakdown processes of the switch and its insulation issues are experimentally studied. The function and the beneficial effects of the damping resistor, installed together with an additional inductor, are discussed. Finally, the parameters of these two damping components are set to 500 Ω and 2 μH values for which the switch has been demonstrated to work successfully at over 2.3 MV.

  10. Development of a 5.5 m diameter vertical axis wind turbine, phase 3

    NASA Astrophysics Data System (ADS)

    Dekitsch, A.; Etzler, C. C.; Fritzsche, A.; Lorch, G.; Mueller, W.; Rogalla, K.; Schmelzle, J.; Schuhwerk, W.; Vollan, A.; Welte, D.

    1982-06-01

    In continuation of development of a 5.5 m diameter vertical axis windmill that consists in conception, building, and wind tunnel testing, a Darrieus rotor windpowered generator feeding an isolated network under different wind velocity conditions and with optimal energy conversion efficiency was designed built, and field tested. The three-bladed Darrieus rotor tested in the wind tunnel was equiped with two variable pitch Savonius rotors 2 m in diameter. By means of separate measures of the aerodynamic factors and the energy consumption, effect of revisions and optimizations on different elements was assessed. Pitch adjustement of the Savonius blades, lubrication of speed reducer, rotor speed at cut-in of generator field excitation, time constant of field excitation, stability conditions, switch points of ohmic resistors which combined with a small electric battery simulated a larger isolated network connected with a large storage battery, were investigated. Fundamentals for the economic series production of windpowered generators with Darrieus rotors for the control and the electric conversion system are presented.

  11. Improved battery parameter estimation method considering operating scenarios for HEV/EV applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Jufeng; Xia, Bing; Shang, Yunlong

    This study presents an improved battery parameter estimation method based on typical operating scenarios in hybrid electric vehicles and pure electric vehicles. Compared with the conventional estimation methods, the proposed method takes both the constant-current charging and the dynamic driving scenarios into account, and two separate sets of model parameters are estimated through different parts of the pulse-rest test. The model parameters for the constant-charging scenario are estimated from the data in the pulse-charging periods, while the model parameters for the dynamic driving scenario are estimated from the data in the rest periods, and the length of the fitted datasetmore » is determined by the spectrum analysis of the load current. In addition, the unsaturated phenomenon caused by the long-term resistor-capacitor (RC) network is analyzed, and the initial voltage expressions of the RC networks in the fitting functions are improved to ensure a higher model fidelity. Simulation and experiment results validated the feasibility of the developed estimation method.« less

  12. Improved battery parameter estimation method considering operating scenarios for HEV/EV applications

    DOE PAGES

    Yang, Jufeng; Xia, Bing; Shang, Yunlong; ...

    2016-12-22

    This study presents an improved battery parameter estimation method based on typical operating scenarios in hybrid electric vehicles and pure electric vehicles. Compared with the conventional estimation methods, the proposed method takes both the constant-current charging and the dynamic driving scenarios into account, and two separate sets of model parameters are estimated through different parts of the pulse-rest test. The model parameters for the constant-charging scenario are estimated from the data in the pulse-charging periods, while the model parameters for the dynamic driving scenario are estimated from the data in the rest periods, and the length of the fitted datasetmore » is determined by the spectrum analysis of the load current. In addition, the unsaturated phenomenon caused by the long-term resistor-capacitor (RC) network is analyzed, and the initial voltage expressions of the RC networks in the fitting functions are improved to ensure a higher model fidelity. Simulation and experiment results validated the feasibility of the developed estimation method.« less

  13. Thermal management methods for compact high power LED arrays

    NASA Astrophysics Data System (ADS)

    Christensen, Adam; Ha, Minseok; Graham, Samuel

    2007-09-01

    The package and system level temperature distributions of a high power (>1W) light emitting diode (LED) array has been investigated using numerical heat flow models. For this analysis, a thermal resistor network model was combined with a 3D finite element submodel of an LED structure to predict system and die level temperatures. The impact of LED array density, LED power density, and active versus passive cooling methods on device operation were calculated. In order to help understand the role of various thermal resistances in cooling such compact arrays, the thermal resistance network was analyzed in order to estimate the contributions from materials as well as active and passive cooling schemes. An analysis of thermal stresses and residual stresses in the die are also calculated based on power dissipation and convection heat transfer coefficients. Results show that the thermal stress in the GaN layer are compressive which can impact the band gap and performance of the LEDs.

  14. Search for Directed Networks by Different Random Walk Strategies

    NASA Astrophysics Data System (ADS)

    Zhu, Zi-Qi; Jin, Xiao-Ling; Huang, Zhi-Long

    2012-03-01

    A comparative study is carried out on the efficiency of five different random walk strategies searching on directed networks constructed based on several typical complex networks. Due to the difference in search efficiency of the strategies rooted in network clustering, the clustering coefficient in a random walker's eye on directed networks is defined and computed to be half of the corresponding undirected networks. The search processes are performed on the directed networks based on Erdös—Rényi model, Watts—Strogatz model, Barabási—Albert model and clustered scale-free network model. It is found that self-avoiding random walk strategy is the best search strategy for such directed networks. Compared to unrestricted random walk strategy, path-iteration-avoiding random walks can also make the search process much more efficient. However, no-triangle-loop and no-quadrangle-loop random walks do not improve the search efficiency as expected, which is different from those on undirected networks since the clustering coefficient of directed networks are smaller than that of undirected networks.

  15. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2007-01-09

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC--DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC--DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  16. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2010-05-04

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  17. Modular high voltage power supply for chemical analysis

    DOEpatents

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  18. Utilizing Metalized Fabrics for Liquid and Rip Detection and Localization

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Holland, Stephen; Mahan, Cody; Kuhn, Michael J

    2013-01-01

    This paper proposes a novel technique for utilizing conductive textiles as a distributed sensor for detecting and localizing liquids (e.g., blood), rips (e.g., bullet holes), and potentially biosignals. The proposed technique is verified through both simulation and experimental measurements. Circuit theory is utilized to depict conductive fabric as a bounded, near-infinite grid of resistors. Solutions to the well-known infinite resistance grid problem are used to confirm the accuracy and validity of this modeling approach. Simulations allow for discontinuities to be placed within the resistor matrix to illustrate the effects of bullet holes within the fabric. A real-time experimental system wasmore » developed that uses a multiplexed Wheatstone bridge approach to reconstruct the resistor grid across the conductive fabric and detect liquids and rips. The resistor grid model is validated through a comparison of simulated and experimental results. Results suggest accuracy proportional to the electrode spacing in determining the presence and location of discontinuities in conductive fabric samples. Future work is focused on refining the experimental system to provide more accuracy in detecting and localizing events as well as developing a complete prototype that can be deployed for field testing. Potential applications include intelligent clothing, flexible, lightweight sensing systems, and combat wound detection.« less

  19. Accuracy and Resolution Analysis of a Direct Resistive Sensor Array to FPGA Interface

    PubMed Central

    Oballe-Peinado, Óscar; Vidal-Verdú, Fernando; Sánchez-Durán, José A.; Castellanos-Ramos, Julián; Hidalgo-López, José A.

    2016-01-01

    Resistive sensor arrays are formed by a large number of individual sensors which are distributed in different ways. This paper proposes a direct connection between an FPGA and a resistive array distributed in M rows and N columns, without the need of analog-to-digital converters to obtain resistance values in the sensor and where the conditioning circuit is reduced to the use of a capacitor in each of the columns of the matrix. The circuit allows parallel measurements of the N resistors which form each of the rows of the array, eliminating the resistive crosstalk which is typical of these circuits. This is achieved by an addressing technique which does not require external elements to the FPGA. Although the typical resistive crosstalk between resistors which are measured simultaneously is eliminated, other elements that have an impact on the measurement of discharge times appear in the proposed architecture and, therefore, affect the uncertainty in resistance value measurements; these elements need to be studied. Finally, the performance of different calibration techniques is assessed experimentally on a discrete resistor array, obtaining for a new model of calibration, a maximum relative error of 0.066% in a range of resistor values which correspond to a tactile sensor. PMID:26840321

  20. Accuracy and Resolution Analysis of a Direct Resistive Sensor Array to FPGA Interface.

    PubMed

    Oballe-Peinado, Óscar; Vidal-Verdú, Fernando; Sánchez-Durán, José A; Castellanos-Ramos, Julián; Hidalgo-López, José A

    2016-02-01

    Resistive sensor arrays are formed by a large number of individual sensors which are distributed in different ways. This paper proposes a direct connection between an FPGA and a resistive array distributed in M rows and N columns, without the need of analog-to-digital converters to obtain resistance values in the sensor and where the conditioning circuit is reduced to the use of a capacitor in each of the columns of the matrix. The circuit allows parallel measurements of the N resistors which form each of the rows of the array, eliminating the resistive crosstalk which is typical of these circuits. This is achieved by an addressing technique which does not require external elements to the FPGA. Although the typical resistive crosstalk between resistors which are measured simultaneously is eliminated, other elements that have an impact on the measurement of discharge times appear in the proposed architecture and, therefore, affect the uncertainty in resistance value measurements; these elements need to be studied. Finally, the performance of different calibration techniques is assessed experimentally on a discrete resistor array, obtaining for a new model of calibration, a maximum relative error of 0.066% in a range of resistor values which correspond to a tactile sensor.

  1. Zero-point term and quantum effects in the Johnson noise of resistors: a critical appraisal

    NASA Astrophysics Data System (ADS)

    Kish, Laszlo B.; Niklasson, Gunnar A.; Granqvist, Claes G.

    2016-05-01

    There is a longstanding debate about the zero-point term in the Johnson noise voltage of a resistor. This term originates from a quantum-theoretical treatment of the fluctuation-dissipation theorem (FDT). Is the zero-point term really there, or is it only an experimental artifact, due to the uncertainty principle, for phase-sensitive amplifiers? Could it be removed by renormalization of theories? We discuss some historical measurement schemes that do not lead to the effect predicted by the FDT, and we analyse new features that emerge when the consequences of the zero-point term are measured via the mean energy and force in a capacitor shunting the resistor. If these measurements verify the existence of a zero-point term in the noise, then two types of perpetual motion machines can be constructed. Further investigation with the same approach shows that, in the quantum limit, the Johnson-Nyquist formula is also invalid under general conditions even though it is valid for a resistor-antenna system. Therefore we conclude that in a satisfactory quantum theory of the Johnson noise, the FDT must, as a minimum, include also the measurement system used to evaluate the observed quantities. Issues concerning the zero-point term may also have implications for phenomena in advanced nanotechnology.

  2. A new computer-aided simulation model for polycrystalline silicon film resistors

    NASA Astrophysics Data System (ADS)

    Ching-Yuan Wu; Weng-Dah Ken

    1983-07-01

    A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

  3. An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

    NASA Astrophysics Data System (ADS)

    Cortese, Simone; Khiat, Ali; Carta, Daniela; Light, Mark E.; Prodromakis, Themistoklis

    2016-01-01

    Resistive random access memory (ReRAM) crossbar arrays have become one of the most promising candidates for next-generation non volatile memories. To become a mature technology, the sneak path current issue must be solved without compromising all the advantages that crossbars offer in terms of electrical performances and fabrication complexity. Here, we present a highly integrable access device based on nickel and sub-stoichiometric amorphous titanium dioxide (TiO2-x), in a metal insulator metal crossbar structure. The high voltage margin of 3 V, amongst the highest reported for monolayer selector devices, and the good current density of 104 A/cm2 make it suitable to sustain ReRAM read and write operations, effectively tackling sneak currents in crossbars without compromising fabrication complexity in a 1 Selector 1 Resistor (1S1R) architecture. Furthermore, the voltage margin is found to be tunable by an annealing step without affecting the device's characteristics.

  4. Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

    NASA Technical Reports Server (NTRS)

    Burns, Bradley M.; Blalock, Norman N.

    2010-01-01

    A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the switch and the inductor configuration. In the fault condition, both the resistor and the inductor react immediately. The resistor reacts by allowing more current to flow and dropping the voltage. Initially, the inductor reacts by dropping the voltage, and then by not allowing the current to change. When the comparator detects the drop in voltage, it opens the switch, thus preventing any further current flow. The inductor alone is not sufficient protection, because after the voltage drop has settled, the inductor would then allow the current to change, in this example, the current would be 3.7 A. In the fault condition, the resistor is flowing 200 mA until the fuse blows (anywhere from 1 ms to 100 s), while the switch and inductor combination is flowing about 2 A test current while monitoring for the fault to be corrected. Finally, as an additional safety feature, the circuit can be configured to hold the switch opened until both the load and source are disconnected.

  5. THERMOCOUPLE VACUUM GAUGE

    DOEpatents

    Price, G.W.

    1954-08-01

    A protector device is described for use in controlling the pressure within a cyclotron. In particular, an electrical circuit functions to actuate a vacuum pump when a predetermined low pressure is reached and disconnect the pump when the pressure increases abcve a certain value. The principal feature of the control circuit lies in the use of a voltage divider network at the input to a relay control tube comprising two parallel, adjustable resistances wherein one resistor is switched into the circuit when the relay connects the pump to a power source. With this arrangement the relay is energized at one input level received from a sensing element within the cyclotron chamber and is de-energized when a second input level, representing the higher pressure limit, is reached.

  6. A pelvic motion driven electrical stimulator for drop-foot treatment.

    PubMed

    Chen, Shih-Wei; Chen, Shih-Ching; Chen, Chiun-Fan; Lai, Jin-Shin; Kuo, Te-Son

    2009-01-01

    Foot switches operating with force sensitive resistors placed in the shoe sole were considered as an effective way for driving FES assisted walking systems in gait restoration. However, the reliability and durability of the foot switches run down after a certain number of steps. As an alternative for foot switches, a simple, portable, and easy to handle motion driven electrical stimulator (ES) is provided for drop foot treatment. The device is equipped with a single tri-axis accelerometer worn on the pelvis, a commercial dual channel electrical stimulator, and a controller unit. By monitoring the pelvic rotation and acceleration during a walking cycle, the events including heel strike and toe off of each step is thereby predicted by a post-processing neural network model.

  7. Note: A novel method for generating multichannel quasi-square-wave pulses.

    PubMed

    Mao, C; Zou, X; Wang, X

    2015-08-01

    A 21-channel quasi-square-wave nanosecond pulse generator was constructed. The generator consists of a high-voltage square-wave pulser and a channel divider. Using an electromagnetic relay as a switch and a 50-Ω polyethylene cable as a pulse forming line, the high-voltage pulser produces a 10-ns square-wave pulse of 1070 V. With a specially designed resistor-cable network, the channel divider divides the high-voltage square-wave pulse into 21 identical 10-ns quasi-square-wave pulses of 51 V, exactly equal to 1070 V/21. The generator can operate not only in a simultaneous mode but also in a delay mode if the cables in the channel divider are different in length.

  8. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-07-27

    Varistors and/or resistors are described that include doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  9. Zinc oxide varistors and/or resistors

    DOEpatents

    Arnold, Jr., Wesley D.; Bond, Walter D.; Lauf, Robert J.

    1993-01-01

    Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

  10. Series Fault Limiting Resistors for Atlas Marx Modules

    DTIC Science & Technology

    1995-07-01

    use Reticulated Vitreous Carbon (RVC)2 foam blocks for the series resistor element. The blocks will serve as a resistive transmission line on the...3,4. 2. Joseph Wang, (Department of Chemistry, New Mexico State University, Las Cruces NM 88003, USA), " Reticulated Vitreous Carbon -A New Versatile...0.08 Ohm-em fitting our requirements well. The process of producing RVC results in a reproducibly refined form of continuous-fiber, vitreous Carbon

  11. Low-Loss Coupler For Microwave Laser-Diode Modulation

    NASA Technical Reports Server (NTRS)

    Toda, Minoru

    1991-01-01

    Elimination of series resistor reduces loss of radio-frequency power. Quarter-wavelength matching section connected to transmission line eliminates need for resistor near laser diode and extends frequency response of system. Concept significantly extends relatively flat frequency response of laser diode or similar component, while simplifying design of its package, increasing amplitude of output signal, and reducing dissipation of heat by eliminating resistance. Phase characteristics approximately linear and any digital information transmitted not significantly altered.

  12. Memristors in plants

    PubMed Central

    Volkov, Alexander G; Tucket, Clayton; Reedus, Jada; Volkova, Maya I; Markin, Vladislav S; Chua, Leon

    2014-01-01

    We investigated electrical circuitry of the Venus flytrap, Mimosa pudica and Aloe vera. The goal was to discover if these plants might have a new electrical component—a resistor with memory. This element has attracted great interest recently and the researchers were looking for its presence in different systems. The analysis was based on cyclic current-voltage characteristic where the resistor with memory should manifest itself. We found that the electrostimulation of plants by bipolar sinusoidal or triangle periodic waves induces electrical responses in the Venus flytrap, Mimosa pudica and Aloe vera with fingerprints of memristors. Tetraethylammonium chloride, an inhibitor of voltage gated K+ channels, transforms a memristor to a resistor in plant tissue. Our results demonstrate that a voltage gated K+ channel in the excitable tissue of plants has properties of a memristor. This study can be a starting point for understanding mechanisms of memory, learning, circadian rhythms, and biological clocks. PMID:24556876

  13. SQUID-based current sensing noise thermometry for quantum resistors at dilution refrigerator temperatures

    NASA Astrophysics Data System (ADS)

    Kleinbaum, Ethan; Shingla, Vidhi; Csáthy, G. A.

    2017-03-01

    We present a dc Superconducting QUantum Interference Device (SQUID)-based current amplifier with an estimated input referred noise of only 2.3 fA/√{Hz}. Because of such a low amplifier noise, the circuit is useful for Johnson noise thermometry of quantum resistors in the kΩ range down to mK temperatures. In particular, we demonstrate that our circuit does not contribute appreciable noise to the Johnson noise of a 3.25 kΩ resistor down to 16 mK. Our circuit is a useful alternative to the commonly used High Electron Mobility Transistor-based amplifiers, but in contrast to the latter, it offers a much reduced 1/f noise. In comparison to SQUIDs interfaced with cryogenic current comparators, our circuit has similar low noise levels, but it is easier to build and to shield from magnetic pickup.

  14. Flat panel display using Ti-Cr-Al-O thin film

    DOEpatents

    Jankowski, Alan F.; Schmid, Anthony P.

    2002-01-01

    Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

  15. Nanoporous carbon tunable resistor/transistor and methods of production thereof

    DOEpatents

    Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

    2014-04-22

    In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

  16. Evaluation of Ferrite Chip Beads as Surge Current Limiters in Circuits with Tantalum Capacitors

    NASA Technical Reports Server (NTRS)

    Teverovsky, Alexander

    2014-01-01

    Limiting resistors are currently required to be connected in series with tantalum capacitors to reduce the risk of surge current failures. However, application of limiting resistors decreases substantially the efficiency of the power supply systems. An ideal surge current limiting device should have a negligible resistance for DC currents and high resistance at frequencies corresponding to transients in tantalum capacitors. This work evaluates the possibility of using chip ferrite beads (FB) as such devices. Twelve types of small size FBs from three manufacturers were used to evaluate their robustness under soldering stresses and at high surge current spikes associated with transients in tantalum capacitors. Results show that FBs are capable to withstand current pulses that are substantially greater than the specified current limits. However, due to a sharp decrease of impedance with current, FBs do not reduce surge currents to the required level that can be achieved with regular resistors.

  17. Elimination of voltage reversal in multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFCs) stacking system by resistor control.

    PubMed

    Kim, Bongkyu; Chang, In Seop

    2018-08-01

    Voltage reversal (VR) in series connection of multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFC) is eliminated by manipulating the resistor control. Discharge test results collected from two mMEA-MFCs initially operated (designated as P1 and P2) confirm that the performance of P2 exceeds that of P1. Thus, driving P1 and P2 as serially stacked MFCs generate the VR in P1. Controlling the inserted resistor adjust the current production of P2 to maintain balance with P1, and the VR in P1 is eliminated in the operation of stacking mode. Thus, manipulating the internal resistance provide an applicable approach to suppress VR in the stacking of mMEA-MFCs system. Copyright © 2018 Elsevier Ltd. All rights reserved.

  18. Radiofrequency characteristics of ionized sputtered tantalum nitride thin-film resistor in CMOS device

    NASA Astrophysics Data System (ADS)

    Sul, Woo Suk; Kwon, Soon Hyeong; Choi, Eunmi; Cui, Yinhua; Lee, Kang Won; Shim, Ho Jae; Gao, Yuan; Hahn, Sang June; Pyo, Sung Gyu

    2017-05-01

    We report the analysis of the radiofrequency (RF) characteristics according to the size, area, and shape of TaN thin-film resistor (TFR) layers. As the TFR size increased, its characteristics were degraded with increasing frequency owing to the increased capacitive parasitic components. As the frequency increased from 1 MHz to 10 GHz, the effective resistance decreased by approximately 12.5%, 16.4%, and 37.8% when the resistor widths and lengths were 0.5 × 20, 1 × 40, and 2 × 80 μm, respectively. To optimize the performance of the high-frequency TFR, ensuring RF isolation via sufficient separation from the silicon substrates was crucial. To realize this RF isolation, methods for minimizing the effect of lossy Si substrates by using TFRs with a smaller area or by forming a patterned ground shield should be introduced. [Figure not available: see fulltext.

  19. Development of an Algorithm for Automatic Analysis of the Impedance Spectrum Based on a Measurement Model

    NASA Astrophysics Data System (ADS)

    Kobayashi, Kiyoshi; Suzuki, Tohru S.

    2018-03-01

    A new algorithm for the automatic estimation of an equivalent circuit and the subsequent parameter optimization is developed by combining the data-mining concept and complex least-squares method. In this algorithm, the program generates an initial equivalent-circuit model based on the sampling data and then attempts to optimize the parameters. The basic hypothesis is that the measured impedance spectrum can be reproduced by the sum of the partial-impedance spectra presented by the resistor, inductor, resistor connected in parallel to a capacitor, and resistor connected in parallel to an inductor. The adequacy of the model is determined by using a simple artificial-intelligence function, which is applied to the output function of the Levenberg-Marquardt module. From the iteration of model modifications, the program finds an adequate equivalent-circuit model without any user input to the equivalent-circuit model.

  20. Functional Laser Trimming Of Thin Film Resistors On Silicon ICs

    NASA Astrophysics Data System (ADS)

    Mueller, Michael J.; Mickanin, Wes

    1986-07-01

    Modern Laser Wafer Trimming (LWT) technology achieves exceptional analog circuit performance and precision while maintain-ing the advantages of high production throughput and yield. Microprocessor-driven instrumentation has both emphasized the role of data conversion circuits and demanded sophisticated signal conditioning functions. Advanced analog semiconductor circuits with bandwidths over 1 GHz, and high precision, trimmable, thin-film resistors meet many of todays emerging circuit requirements. Critical to meeting these requirements are optimum choices of laser characteristics, proper materials, trimming process control, accurate modeling of trimmed resistor performance, and appropriate circuit design. Once limited exclusively to hand-crafted, custom integrated circuits, designs are now available in semi-custom circuit configurations. These are similar to those provided for digital designs and supported by computer-aided design (CAD) tools. Integrated with fully automated measurement and trimming systems, these quality circuits can now be produced in quantity to meet the requirements of communications, instrumentation, and signal processing markets.

  1. Solving the integration problem of one transistor one memristor architecture with a Bi-layer IGZO film through synchronous process

    NASA Astrophysics Data System (ADS)

    Chang, Che-Chia; Liu, Po-Tsun; Chien, Chen-Yu; Fan, Yang-Shun

    2018-04-01

    This study demonstrates the integration of a thin film transistor (TFT) and resistive random-access memory (RRAM) to form a one-transistor-one-resistor (1T1R) configuration. With the concept of the current conducting direction in RRAM and TFT, a triple-layer stack design of Pt/InGaZnO/Al2O3 is proposed for both the switching layer of RRAM and the channel layer of TFT. This proposal decreases the complexity of fabrication and the numbers of photomasks required. Also, the robust endurance and stable retention characteristics are exhibited by the 1T1R architecture for promising applications in memory-embedded flat panel displays.

  2. PSpice Model of Lightning Strike to a Steel Reinforced Structure

    NASA Astrophysics Data System (ADS)

    Koone, Neil; Condren, Brian

    2003-12-01

    Surges and arcs from lightning can pose hazards to personnel and sensitive equipment, and processes. Steel reinforcement in structures can act as a Faraday cage mitigating lightning effects. Knowing a structure's response to a lightning strike allows hazards associated with lightning to be analyzed. A model of lightning's response in a steel reinforced structure has been developed using PSpice (a commercial circuit simulation). Segments of rebar are modeled as inductors and resistors in series. A program has been written to take architectural information of a steel reinforced structure and "build" a circuit network that is analogous to the network of reinforcement in a facility. A severe current waveform (simulating a 99th percentile lightning strike), modeled as a current source, is introduced in the circuit network, and potential differences within the structure are determined using PSpice. A visual three-dimensional model of the facility displays the voltage distribution across the structure using color to indicate the potential difference relative to the floor. Clear air arcing distances can be calculated from the voltage distribution using a conservative value for the dielectric breakdown strength of air. Potential validation tests for the model will be presented.

  3. Using of explosive technologies for development of a compact current-limiting device for operation on 110 kV class systems

    NASA Astrophysics Data System (ADS)

    Shurupov, A. V.; Shurupov, M. A.; Kozlov, A. A.; Kotov, A. V.

    2016-11-01

    This paper considers the possibility of creating on new physical principles a highspeed current-limiting device (CLD) for the networks with voltage of 110 kV, namely, on the basis of the explosive switching elements. The device is designed to limit the steady short-circuit current to acceptable values for the time does not exceed 3 ms at electric power facilities. The paper presents an analysis of the electrical circuit of CLD. The main features of the scheme are: a new high-speed switching element with high regenerating voltage; fusible switching element that enables to limit the overvoltage after sudden breakage of network of the explosive switch; non-inductive resistor with a high heat capacity and a special reactor with operating time less than 1 s. We analyzed the work of the CLD with help of special software PSPICE, which is based on the equivalent circuit of single-phase short circuit to ground in 110 kV network. Analysis of the equivalent circuit operation CLD shows its efficiency and determines the CLD as a perspective direction of the current-limiting devices of new generation.

  4. Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity.

    PubMed

    Pedretti, G; Milo, V; Ambrogio, S; Carboni, R; Bianchi, S; Calderoni, A; Ramaswamy, N; Spinelli, A S; Ielmini, D

    2017-07-13

    Brain-inspired computation can revolutionize information technology by introducing machines capable of recognizing patterns (images, speech, video) and interacting with the external world in a cognitive, humanlike way. Achieving this goal requires first to gain a detailed understanding of the brain operation, and second to identify a scalable microelectronic technology capable of reproducing some of the inherent functions of the human brain, such as the high synaptic connectivity (~10 4 ) and the peculiar time-dependent synaptic plasticity. Here we demonstrate unsupervised learning and tracking in a spiking neural network with memristive synapses, where synaptic weights are updated via brain-inspired spike timing dependent plasticity (STDP). The synaptic conductance is updated by the local time-dependent superposition of pre- and post-synaptic spikes within a hybrid one-transistor/one-resistor (1T1R) memristive synapse. Only 2 synaptic states, namely the low resistance state (LRS) and the high resistance state (HRS), are sufficient to learn and recognize patterns. Unsupervised learning of a static pattern and tracking of a dynamic pattern of up to 4 × 4 pixels are demonstrated, paving the way for intelligent hardware technology with up-scaled memristive neural networks.

  5. Unified equivalent circuit model for carbon nanotube-based nanocomposites.

    PubMed

    Zhao, Chaoyang; Yuan, Weifeng; Zhao, Yangzhou; Hu, Ning; Gu, Bin; Liu, Haidong; Alamusi

    2018-07-27

    Carbon nanotubes form a complex network in nanocomposites. In the network, the configuration of the nanotubes is various. A carbon nanotube may be curled or straight, and it may be parallel or crossed to another. As a result, carbon nanotube-based composites exhibit integrated characteristics of inductor, capacitor and resistor. In this work, it is hypothesised that carbon nanotube-based composites all adhere to a RLC interior circuit. To verify the hypothesis, three different composites, viz multi-walled carbon nanotube/polyvinylidene fluoride (MWCNT/PVDF), multi-walled carbon nanotube/epoxy (MWCNT/EP), multi-walled carbon nanotube/polydimethylsiloxane (MWCNT/PDMS) were fabricated and tested. The resistances and the dielectric loss tangent (tanδ) of the materials were measured in direct and alternating currents. The measurement shows that the value of tanδ is highly affected by the volume fraction of MWCNT in the composites. The experimental results prove that the proposed RLC equivalent circuit model can fully describe the electrical properties of the MWCNT network in nanocomposites. The RLC model provides a new route to detect the inductance and capacitance of carbon nanotubes. Moreover, the model also indicates that the carbon nanotube-based composite films may be used to develop wireless strain sensors.

  6. Percolation of localized attack on isolated and interdependent random networks

    NASA Astrophysics Data System (ADS)

    Shao, Shuai; Huang, Xuqing; Stanley, H. Eugene; Havlin, Shlomo

    2014-03-01

    Percolation properties of isolated and interdependent random networks have been investigated extensively. The focus of these studies has been on random attacks where each node in network is attacked with the same probability or targeted attack where each node is attacked with a probability being a function of its centrality, such as degree. Here we discuss a new type of realistic attacks which we call a localized attack where a group of neighboring nodes in the networks are attacked. We attack a randomly chosen node, its neighbors, and its neighbor of neighbors and so on, until removing a fraction (1 - p) of the network. This type of attack reflects damages due to localized disasters, such as earthquakes, floods and war zones in real-world networks. We study, both analytically and by simulations the impact of localized attack on percolation properties of random networks with arbitrary degree distributions and discuss in detail random regular (RR) networks, Erdős-Rényi (ER) networks and scale-free (SF) networks. We extend and generalize our theoretical and simulation results of single isolated networks to networks formed of interdependent networks.

  7. A Pulse Code Modulated Fiber Optic Link Design for Quinault Under-Water Tracking Range.

    DTIC Science & Technology

    1980-09-01

    invented and patented a light-wave communications device, the Photophone . The light beam was acoustically modulated, transmitted through the atmosphere and...a load resistor or feedback resistor. This voltage can be cal- culated by multiplying the received power, the respcnsiv ity and the effective load...frequency is not real critical since the clock, in effect , is synchronized after every eight bits by the timing pulse. The more interesting part of the

  8. The P3 Power Generation System for Advanced Missile Defense Applications

    DTIC Science & Technology

    2008-11-01

    circuit. This increased the output power to the load resistor . The inductor couples with the piezo element to form an electrical LC tuned circuit and...of RMS power was generated with an efficiency of 40 % when an inductor of 250 mH was connected in series to a 100 ohm resistor . From power density...per cycle for generating electrical energy in a piezo -crystal membrane. Steady-state heat transfer measurements have been made previously with a

  9. Auxiliary Components for Kilopixel Transition Edge Sensor Arrays

    NASA Technical Reports Server (NTRS)

    Brown, Ari-David; Chervenak, James A.; Chuss, David; Hilton Gene C.; Mikula, Vilem; Henry, ROss; Wollack, Edward; Zhao, Yue

    2007-01-01

    We have fabricated transition edge sensor bolometer focal plane arrays sensitive to mm-submillimeter (0.1-3 THz) radiation for the Atacama Cosmology Telescope (ACT), which will probe the cosmic microwave background at 0.147,0.215, and 0.279 GHz. Central to the performance of these bolometers is a set of auxiliary resistive components. Here we discuss shunt resistors, which allow for tight optimization of bolometer time constant and sensitivity. Our shunt resistors consist of AuPd strips grown atop of interdigitated superconducting MoN, wires. We can tailor the shunt resistance by altering the dimensions of the AuPd strips and the pitch and width of the MoN, wires and can fabricate over 1000 shunts on a single 4" wafer. By modeling the resistance dependence of these parameters, a variety of different 0.77 +I-0.13 mOhm shunt resistors have been fabricated. This variety includes different shunts possessing MoN, wires with wire width equal to 1.5 and 10 microns and pitch equal to 4.5 and 26 microns, respectively. Our ability to set the resistance of the shunts hints at the scalability of our design. We have also integrated a Si02 capping layer into our shunt resistor fabrication scheme, which inhibits metal corrosion and eventual degradation of the shunt. Consequently, their robustness coupled with their high packing density makes these resistive components attractive for future kilopixel detector arrays.

  10. Characteristics of precision 1 Ω standard resistors influencing transport behaviour and the uncertainty of key comparisons

    NASA Astrophysics Data System (ADS)

    Jones, G. R.; Pritchard, B. J.; Elmquist, R. E.

    2009-10-01

    National measurement institutes (NMIs) participate in international key comparisons organized by the Bureau International des Poids et Mesures (BIPM), the Regional Metrology Organizations (RMOs) or the Consultative Committees of the Comité International des Poids et Mesures (CIPM) in order to provide evidence of equivalent reference standards and measurement capabilities. The US National Institute of Standards and Technology (NIST) and the National Measurement Institute of Australia (NMIA) have recently examined power loading and several other influences on the value of precision transportable 1 Ω resistors that can increase the uncertainty of key comparisons. We have studied the effects of temperature, barometric pressure, humidity, power loading and heat dissipation in oil on transportable wire-wound 1 Ω resistance standards that are based on different alloys and construction principles. This work focuses on standards manufactured from 1970 through 2000 by the NMIA made of Evanohm alloy and on Thomas-type resistors designed in the 1930s and made of Manganin alloy. We show that the relative standard uncertainty related to transport can be less than 0.01 μΩ Ω-1 when using certain resistors of these two types that are characterized and selected for stability. We describe the characterization process, and relate the environmental influences to the physical design, as well as to the mechanical properties and condition of the standards.

  11. Electrohydrodynamic printing of organic polymeric resistors on flat and uneven surfaces

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Maktabi, Sepehr; Chiarot, Paul R., E-mail: pchiarot@binghamton.edu

    In materials printing applications, the ability to generate fine droplets is critical for achieving high-resolution features. Other desirable characteristics are high print speeds, large stand-off distances, and minimal instrumentation requirements. In this work, a tunable electrohydrodynamic (EHD) printing technique capable of generating micron-sized droplets is reported. This method was used to print organic resistors on flat and uneven substrates. These ubiquitous electronic components were built using the commercial polymer-based conductive ink poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), which has been widely used in the manufacturing of organic electronic devices. Resistors with widths from 50 to 500 μm and resistances from 1 to 70 Ω/μm weremore » created. An array of emission modes for EHD printing was identified. Among these, the most promising is the microdripping mode, where droplets 10 times smaller than the nozzle's inner diameter were created at frequencies in excess of 5 kHz. It was found that the ink flow rate, applied voltage, and stand-off distance all significantly influence the droplet generation frequency. In particular, the experimental results reveal that the frequency increases nonlinearly with the applied voltage. The non-Newtonian shear thinning behavior of PEDOT:PSS strongly influenced the droplet frequency. Finally, the topology of a 3-dimensional target substrate had a significant effect on the structure and function of a printed resistor.« less

  12. Quantifying randomness in real networks

    NASA Astrophysics Data System (ADS)

    Orsini, Chiara; Dankulov, Marija M.; Colomer-de-Simón, Pol; Jamakovic, Almerima; Mahadevan, Priya; Vahdat, Amin; Bassler, Kevin E.; Toroczkai, Zoltán; Boguñá, Marián; Caldarelli, Guido; Fortunato, Santo; Krioukov, Dmitri

    2015-10-01

    Represented as graphs, real networks are intricate combinations of order and disorder. Fixing some of the structural properties of network models to their values observed in real networks, many other properties appear as statistical consequences of these fixed observables, plus randomness in other respects. Here we employ the dk-series, a complete set of basic characteristics of the network structure, to study the statistical dependencies between different network properties. We consider six real networks--the Internet, US airport network, human protein interactions, technosocial web of trust, English word network, and an fMRI map of the human brain--and find that many important local and global structural properties of these networks are closely reproduced by dk-random graphs whose degree distributions, degree correlations and clustering are as in the corresponding real network. We discuss important conceptual, methodological, and practical implications of this evaluation of network randomness, and release software to generate dk-random graphs.

  13. Synchronization in Random Pulse Oscillator Networks

    NASA Astrophysics Data System (ADS)

    Brown, Kevin; Hermundstad, Ann

    Motivated by synchronization phenomena in neural systems, we study synchronization of random networks of coupled pulse oscillators. We begin by considering binomial random networks whose nodes have intrinsic linear dynamics. We quantify order in the network spiking dynamics using a new measure: the normalized Lev-Zimpel complexity (LZC) of the nodes' spike trains. Starting from a globally-synchronized state, we see two broad classes of behaviors. In one (''temporally random''), the LZC is high and nodes spike independently with no coherent pattern. In another (''temporally regular''), the network does not globally synchronize but instead forms coherent, repeating population firing patterns with low LZC. No topological feature of the network reliably predicts whether an individual network will show temporally random or regular behavior; however, we find evidence that degree heterogeneity in binomial networks has a strong effect on the resulting state. To confirm these findings, we generate random networks with independently-adjustable degree mean and variance. We find that the likelihood of temporally-random behavior increases as degree variance increases. Our results indicate the subtle and complex relationship between network structure and dynamics.

  14. DOE Office of Scientific and Technical Information (OSTI.GOV)

    CRESSWELL,M.W.; ALLEN,R.A.; GHOSHTAGORE,R.N.

    This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in (100) Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging. The reference-segment features were aligned with <110> directions in the BESOI surface material and had drawn linewidths ranging from 0.35 to 3.0 {micro}m. They were defined by a silicon micro-machining process which results in their sidewalls being atomically-planar and smooth and inclined at 54.737{degree} tomore » the surface (100) plane of the substrate. This (100) implementation may usefully complement the attributes of the previously-reported vertical-sidewall one for selected reference-material applications. For example, the non-orthogonal intersection of the sidewalls and top-surface planes of the reference-segment features may alleviate difficulties encountered with atomic-force microscope measurements. In such applications it has been reported that it may be difficult to maintain probe-tip control at the sharp 90{degree} outside corner of the sidewalls and the upper surface. A second application is refining to-down image-processing algorithms and checking instrument performance. Novel aspects of the (100) SOI implementation that are reported here include the cross-bridge resistor test-structure architecture and details of its fabrication. The long-term goal is to develop a technique for the determination of the absolute dimensions of the trapezoidal cross-sections of the cross-bridge resistors' reference segments, as a prelude to developing them for dimensional reference applications. This is believed to be the first report of electrical CD measurements made on test structures of the cross-bridge resistor type that have been patterned in (100) SOI material. The electrical CD results are compared with cross-section SEM measurements made on the same features.« less

  15. Portable oil bath for high-accuracy resistance transfer and maintenance

    NASA Astrophysics Data System (ADS)

    Shiota, Fuyuhiko

    1999-10-01

    A portable oil bath containing one standard resistor for high-accuracy resistance transfer and maintenance was developed and operated for seven years in the National Research Laboratory of Metrology. The aim of the bath is to save labor and apparatus for high-accuracy resistance transfer and maintenance by consistently keeping the standard resistor in an optimum environmental condition. The details of the prototype system, including its performance, are described together with some suggestions for a more practical bath design, which adopts the same concept.

  16. Simple Comb Generator Design for SWaP Constrained Applications

    DTIC Science & Technology

    2016-01-26

    symmetry in the time domain, all the even harmonics are zero. Following the oscillator is a series capacitor and shunt resistor that together form a...filter’s ideal frequency response is represented by H(j2πk) = 1 1 + 1j2πkRC , (2) where R and C are the resistor and capacitor values, respectively. In...Finally, the output capacitor was included to block the DC bias current from the output connector. III. RESULTS For the prototype measurements discussed

  17. Research on pressure sensors for biomedical instruments

    NASA Technical Reports Server (NTRS)

    Angell, J. B.

    1975-01-01

    The development of a piezo-resistive pressure transducer is discussed suitable for recording pressures typically encountered in biomedical applications. The pressure transducer consists of a thin silicon diaphragm containing four strain-sensitive resistors, and is fabricated using silicon monolithic integrated-circuit technology. The pressure transducers can be as small as 0.7 mm outer diameter, and are, as a result, suitable for mounting at the tip of a catheter. Pressure-induced stress in the diaphragm is sensed by the resistors, which are interconnected to form a Wheatstone bridge.

  18. Comparison of Electrostatic Fins with Piezoelectric Impact Hammer Techniques to Extend Impulse Calibration Range of a Torsional Thrust Stand (Preprint)

    DTIC Science & Technology

    2011-03-23

    prac- tical max impulse to 1mNs. The newly developed Piezo - electric Impact Hammer (PIH) calibration system over- comes geometric limits of ESC...the fins to behave as part of an LRC circuit which results in voltage oscillations. By adding a resistor in series between the pulse generator and...series resistor as well as the effects of no loading on the pulse generator. III. PIEZOELECTRIC IMPACT HAMMER SYSTEM The second calibration method tested

  19. High-power radio-frequency attenuation device

    DOEpatents

    Kerns, Q.A.; Miller, H.W.

    1981-12-30

    A resistor device for attenuating radio frequency power includes a radio frequency conductor connected to a series of fins formed of high relative magnetic permeability material. The fins are dimensional to accommodate the skin depth of the current conduction therethrough, as well as an inner heat conducting portion where current does not travel. Thermal connections for air or water cooling are provided for the inner heat conducting portions of each fin. Also disclosed is a resistor device to selectively alternate unwanted radio frequency energy in a resonant cavity.

  20. Embedded Resistors and Capacitors in Organic and Inorganic Substrates

    NASA Technical Reports Server (NTRS)

    Gerke, Robert David; Ator, Danielle

    2006-01-01

    Embedded resistors and capacitors were purchased from two technology; organic PWB and inorganic low temperature co-fire ceramic (LTCC). Small groups of each substrate were exposed to four environmental tests and several characterization tests to evaluate their performance and reliability. Even though all passive components maintained electrical performance throughout environmental testing, differences between the two technologies were observed. Environmental testing was taken beyond manufacturers' reported testing, but general not taken to failure. When possible, data was quantitatively compared to manufacturer's data.

  1. Flow through collapsible tubes at low Reynolds numbers. Applicability of the waterfall model.

    PubMed

    Lyon, C K; Scott, J B; Wang, C Y

    1980-07-01

    The applicability of the waterfall model was tested using the Starling resistor and different viscosities of fluids to vary the Reynolds number. The waterfall model proved adequate to describe flow in the Starling resistor model only at very low Reynolds numbers (Reynolds number less than 1). Blood flow characterized by such low Reynolds numbers occurs only in the microvasculature. Thus, it is inappropriate to apply the waterfall model indiscriminately to flow through large collapsible veins.

  2. Space and Missile Systems Center Standard: Parts, Materials, and Processes Control Program for Launch Vehicles -SMC-S-011 (2012)

    DTIC Science & Technology

    2012-07-03

    Specification for MIL-PRF-39008 Resistor Fixed, Composition ( Insulated ), Established Reliability, General Specification for MIL-S-45743 Soldering, Manual...2.1.5 Prohibited Relays 1. Plug-in types 2. Solder-sealed relays 2.1.6 Prohibited Resistors 1. All hollow glass or hollow ceramic core devices 2...lowest maximum temperature. This may be the core material, the insulation of the magnet, etc. 2/ Current rating for each winding shall be less than

  3. NEGATIVE GATE GENERATOR

    DOEpatents

    Jones, C.S.; Eaton, T.E.

    1958-02-01

    This patent relates to pulse generating circuits and more particularly to rectangular pulse generators. The pulse generator of the present invention incorporates thyratrons as switching elements to discharge a first capacitor through a load resistor to initiate and provide the body of a Pulse, and subsequently dlscharge a second capacitor to impress the potential of its charge, with opposite potential polarity across the load resistor to terminate the pulse. Accurate rectangular pulses in the millimicrosecond range are produced across a low impedance by this generator.

  4. High power radio frequency attenuation device

    DOEpatents

    Kerns, Quentin A.; Miller, Harold W.

    1984-01-01

    A resistor device for attenuating radio frequency power includes a radio frequency conductor connected to a series of fins formed of high relative magnetic permeability material. The fins are dimensional to accommodate the skin depth of the current conduction therethrough, as well as an inner heat conducting portion where current does not travel. Thermal connections for air or water cooling are provided for the inner heat conducting portions of each fin. Also disclosed is a resistor device to selectively alternate unwanted radio frequency energy in a resonant cavity.

  5. Cross over of recurrence networks to random graphs and random geometric graphs

    NASA Astrophysics Data System (ADS)

    Jacob, Rinku; Harikrishnan, K. P.; Misra, R.; Ambika, G.

    2017-02-01

    Recurrence networks are complex networks constructed from the time series of chaotic dynamical systems where the connection between two nodes is limited by the recurrence threshold. This condition makes the topology of every recurrence network unique with the degree distribution determined by the probability density variations of the representative attractor from which it is constructed. Here we numerically investigate the properties of recurrence networks from standard low-dimensional chaotic attractors using some basic network measures and show how the recurrence networks are different from random and scale-free networks. In particular, we show that all recurrence networks can cross over to random geometric graphs by adding sufficient amount of noise to the time series and into the classical random graphs by increasing the range of interaction to the system size. We also highlight the effectiveness of a combined plot of characteristic path length and clustering coefficient in capturing the small changes in the network characteristics.

  6. Testing the structure of earthquake networks from multivariate time series of successive main shocks in Greece

    NASA Astrophysics Data System (ADS)

    Chorozoglou, D.; Kugiumtzis, D.; Papadimitriou, E.

    2018-06-01

    The seismic hazard assessment in the area of Greece is attempted by studying the earthquake network structure, such as small-world and random. In this network, a node represents a seismic zone in the study area and a connection between two nodes is given by the correlation of the seismic activity of two zones. To investigate the network structure, and particularly the small-world property, the earthquake correlation network is compared with randomized ones. Simulations on multivariate time series of different length and number of variables show that for the construction of randomized networks the method randomizing the time series performs better than methods randomizing directly the original network connections. Based on the appropriate randomization method, the network approach is applied to time series of earthquakes that occurred between main shocks in the territory of Greece spanning the period 1999-2015. The characterization of networks on sliding time windows revealed that small-world structure emerges in the last time interval, shortly before the main shock.

  7. Using Passive Two-Port Networks to Study the Forced Vibrations of Piezoceramic Transducers

    NASA Astrophysics Data System (ADS)

    Karlash, V. L.

    2017-09-01

    A generalization and subsequent development of experimental techniques, including methods of studying the phase-frequency relations between the measured components of admittance and instantaneous power are considered. The conditions of electric loading where electric currents, voltages, or instantaneous powers of constant amplitude in the piezoresonators are specified are numerically modeled. It is particularly established that the advanced Mason circuit with additional switch allows acquiring much more data on the forced vibrations of piezoceramic transducers than the classical circuit. The measured (at an arbitrary frequency) voltage drop across the piezoelement, its pull-up resistor, and at the input of the measuring circuit allow determining, with high accuracy, the current, conductivity, impedance, instantaneous power, and phase shifts when the amplitudes of electric current and voltage are given.

  8. Peak holding circuit for extremely narrow pulses

    NASA Technical Reports Server (NTRS)

    Oneill, R. W. (Inventor)

    1975-01-01

    An improved pulse stretching circuit comprising: a high speed wide-band amplifier connected in a fast charge integrator configuration; a holding circuit including a capacitor connected in parallel with a discharging network which employs a resistor and an FET; and an output buffer amplifier. Input pulses of very short duration are applied to the integrator charging the capacitor to a value proportional to the input pulse amplitude. After a predetermined period of time, conventional circuitry generates a dump pulse which is applied to the gate of the FET making a low resistance path to ground which discharges the capacitor. When the dump pulse terminates, the circuit is ready to accept another pulse to be stretched. The very short input pulses are thus stretched in width so that they may be analyzed by conventional pulse height analyzers.

  9. The wiring diagram for plant G signaling

    DOE PAGES

    Colaneri, Alejandro C.; Jones, Alan M.

    2014-10-01

    Like electronic circuits, the modular arrangement of cell-signaling networks decides how inputs produce outputs. Animal heterotrimeric guanine nucleotide binding proteins (G-proteins) operate as switches in the circuits that signal between extracellular agonists and intracellular effectors. There still is no biochemical evidence for a receptor or its agonist in the plant G-protein pathways. Plant G-proteins deviate in many important ways from the animal paradigm. This paper covers important discoveries from the last two years that enlighten these differences and ends describing alternative wiring diagrams for the plant signaling circuits regulated by G-proteins. Finally, we propose that plant G-proteins are integrated inmore » the signaling circuits as variable resistor rather than switches, controlling the flux of information in response to the cell's metabolic state.« less

  10. Resistance distance and Kirchhoff index in circulant graphs

    NASA Astrophysics Data System (ADS)

    Zhang, Heping; Yang, Yujun

    The resistance distance rij between vertices i and j of a connected (molecular) graph G is computed as the effective resistance between nodes i and j in the corresponding network constructed from G by replacing each edge of G with a unit resistor. The Kirchhoff index Kf(G) is the sum of resistance distances between all pairs of vertices. In this work, closed-form formulae for Kirchhoff index and resistance distances of circulant graphs are derived in terms of Laplacian spectrum and eigenvectors. Special formulae are also given for four classes of circulant graphs (complete graphs, complete graphs minus a perfect matching, cycles, Möbius ladders Mp). In particular, the asymptotic behavior of Kf(Mp) as p ? ? is obtained, that is, Kf(Mp) grows as ⅙p3 as p ? ?.

  11. Nonlinearity of resistive impurity effects on van der Pauw measurements

    NASA Astrophysics Data System (ADS)

    Koon, D. W.

    2006-09-01

    The dependence of van der Pauw resistivity measurements on local macroscopic inhomogeneities is shown to be nonlinear. A resistor grid network models a square laminar specimen, enabling the investigation of both positive and negative local perturbations in resistivity. The effect of inhomogeneity is measured both experimentally, for an 11×11 grid, and computationally, for both 11×11 and 101×101 grids. The maximum "shortlike" perturbation produces 3.1±0.2 times the effect predicted by the linear approximation, regardless of its position within the specimen, while all "openlike" perturbations produce a smaller effect than predicted. An empirical nonlinear correction for f(x ,y) is presented which provides excellent fit over the entire range of both positive and negative perturbations for the entire specimen.

  12. A random spatial network model based on elementary postulates

    USGS Publications Warehouse

    Karlinger, Michael R.; Troutman, Brent M.

    1989-01-01

    A model for generating random spatial networks that is based on elementary postulates comparable to those of the random topology model is proposed. In contrast to the random topology model, this model ascribes a unique spatial specification to generated drainage networks, a distinguishing property of some network growth models. The simplicity of the postulates creates an opportunity for potential analytic investigations of the probabilistic structure of the drainage networks, while the spatial specification enables analyses of spatially dependent network properties. In the random topology model all drainage networks, conditioned on magnitude (number of first-order streams), are equally likely, whereas in this model all spanning trees of a grid, conditioned on area and drainage density, are equally likely. As a result, link lengths in the generated networks are not independent, as usually assumed in the random topology model. For a preliminary model evaluation, scale-dependent network characteristics, such as geometric diameter and link length properties, and topologic characteristics, such as bifurcation ratio, are computed for sets of drainage networks generated on square and rectangular grids. Statistics of the bifurcation and length ratios fall within the range of values reported for natural drainage networks, but geometric diameters tend to be relatively longer than those for natural networks.

  13. Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique

    PubMed Central

    Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

    2009-01-01

    This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature. PMID:22399944

  14. Manufacture of a Polyaniline Nanofiber Ammonia Sensor Integrated with a Readout Circuit Using the CMOS-MEMS Technique.

    PubMed

    Liu, Mao-Chen; Dai, Ching-Liang; Chan, Chih-Hua; Wu, Chyan-Chyi

    2009-01-01

    This study presents the fabrication of a polyaniline nanofiber ammonia sensor integrated with a readout circuit on a chip using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The micro ammonia sensor consists of a sensing resistor and an ammonia sensing film. Polyaniline prepared by a chemical polymerization method was adopted as the ammonia sensing film. The fabrication of the ammonia sensor needs a post-process to etch the sacrificial layers and to expose the sensing resistor, and then the ammonia sensing film is coated on the sensing resistor. The ammonia sensor, which is of resistive type, changes its resistance when the sensing film adsorbs or desorbs ammonia gas. A readout circuit is employed to convert the resistance of the ammonia sensor into the voltage output. Experimental results show that the sensitivity of the ammonia sensor is about 0.88 mV/ppm at room temperature.

  15. A Comparison of Two Sensors Used to Measure High-Voltage, Fast-Risetime Signals in Coaxial Cable

    NASA Astrophysics Data System (ADS)

    Farr, Everett G.; Atchley, Lanney M.; Ellibee, Donald E.; Carey, William J.; Altgilbers, Larry L.

    We consider here two sensors that are commonly used to measure high-voltage fast-risetime signals in coaxial cable. One sensor measures the current in the cable, and is called a Current-Viewing Resistor, or CVR. In this design, the cable jacket is cut, a portion of the cable jacket is removed, and a number of resistors are inserted in parallel across the gap, thereby creating a low resistance in series with the outer cable jacket. The voltage across these resistors is proportional to the current in the coax. The second sensor measures the derivative of the voltage in the coax. It is fabricated from a "sawed-off" SMA connector that is inserted through a small hole in the cable jacket. In this paper we characterize the accuracy of both sensors when used with RG-220 cable, and we discuss the situations when one might prefer one measurement type over the other.

  16. Input current shaped ac-to-dc converters

    NASA Technical Reports Server (NTRS)

    1985-01-01

    Input current shaping techniques for ac-to-dc converters were investigated. Input frequencies much higher than normal, up to 20 kHz were emphasized. Several methods of shaping the input current waveform in ac-to-dc converters were reviewed. The simplest method is the LC filter following the rectifier. The next simplest method is the resistor emulation approach in which the inductor size is determined by the converter switching frequency and not by the line input frequency. Other methods require complicated switch drive algorithms to construct the input current waveshape. For a high-frequency line input, on the order of 20 kHz, the simple LC cannot be discarded so peremptorily, since the inductor size can be compared with that for the resistor emulation method. In fact, since a dc regulator will normally be required after the filter anyway, the total component count is almost the same as for the resistor emulation method, in which the filter is effectively incorporated into the regulator.

  17. Screen printed passive components for flexible power electronics.

    PubMed

    Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

    2015-10-30

    Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

  18. Smart Sensing Strip Using Monolithically Integrated Flexible Flow Sensor for Noninvasively Monitoring Respiratory Flow

    PubMed Central

    Jiang, Peng; Zhao, Shuai; Zhu, Rong

    2015-01-01

    This paper presents a smart sensing strip for noninvasively monitoring respiratory flow in real time. The monitoring system comprises a monolithically-integrated flexible hot-film flow sensor adhered on a molded flexible silicone case, where a miniaturized conditioning circuit with a Bluetooth4.0 LE module are packaged, and a personal mobile device that wirelessly acquires respiratory data transmitted from the flow sensor, executes extraction of vital signs, and performs medical diagnosis. The system serves as a wearable device to monitor comprehensive respiratory flow while avoiding use of uncomfortable nasal cannula. The respiratory sensor is a flexible flow sensor monolithically integrating four elements of a Wheatstone bridge on single chip, including a hot-film resistor, a temperature-compensating resistor, and two balancing resistors. The monitor takes merits of small size, light weight, easy operation, and low power consumption. Experiments were conducted to verify the feasibility and effectiveness of monitoring and diagnosing respiratory diseases using the proposed system. PMID:26694401

  19. Randomizing Genome-Scale Metabolic Networks

    PubMed Central

    Samal, Areejit; Martin, Olivier C.

    2011-01-01

    Networks coming from protein-protein interactions, transcriptional regulation, signaling, or metabolism may appear to have “unusual” properties. To quantify this, it is appropriate to randomize the network and test the hypothesis that the network is not statistically different from expected in a motivated ensemble. However, when dealing with metabolic networks, the randomization of the network using edge exchange generates fictitious reactions that are biochemically meaningless. Here we provide several natural ensembles of randomized metabolic networks. A first constraint is to use valid biochemical reactions. Further constraints correspond to imposing appropriate functional constraints. We explain how to perform these randomizations with the help of Markov Chain Monte Carlo (MCMC) and show that they allow one to approach the properties of biological metabolic networks. The implication of the present work is that the observed global structural properties of real metabolic networks are likely to be the consequence of simple biochemical and functional constraints. PMID:21779409

  20. Robust-yet-fragile nature of interdependent networks

    NASA Astrophysics Data System (ADS)

    Tan, Fei; Xia, Yongxiang; Wei, Zhi

    2015-05-01

    Interdependent networks have been shown to be extremely vulnerable based on the percolation model. Parshani et al. [Europhys. Lett. 92, 68002 (2010), 10.1209/0295-5075/92/68002] further indicated that the more intersimilar networks are, the more robust they are to random failures. When traffic load is considered, how do the coupling patterns impact cascading failures in interdependent networks? This question has been largely unexplored until now. In this paper, we address this question by investigating the robustness of interdependent Erdös-Rényi random graphs and Barabási-Albert scale-free networks under either random failures or intentional attacks. It is found that interdependent Erdös-Rényi random graphs are robust yet fragile under either random failures or intentional attacks. Interdependent Barabási-Albert scale-free networks, however, are only robust yet fragile under random failures but fragile under intentional attacks. We further analyze the interdependent communication network and power grid and achieve similar results. These results advance our understanding of how interdependency shapes network robustness.

  1. Source Localization in Wireless Sensor Networks with Randomly Distributed Elements under Multipath Propagation Conditions

    DTIC Science & Technology

    2009-03-01

    IN WIRELESS SENSOR NETWORKS WITH RANDOMLY DISTRIBUTED ELEMENTS UNDER MULTIPATH PROPAGATION CONDITIONS by Georgios Tsivgoulis March 2009...COVERED Engineer’s Thesis 4. TITLE Source Localization in Wireless Sensor Networks with Randomly Distributed Elements under Multipath Propagation...the non-line-of-sight information. 15. NUMBER OF PAGES 111 14. SUBJECT TERMS Wireless Sensor Network , Direction of Arrival, DOA, Random

  2. Bridges in complex networks

    NASA Astrophysics Data System (ADS)

    Wu, Ang-Kun; Tian, Liang; Liu, Yang-Yu

    2018-01-01

    A bridge in a graph is an edge whose removal disconnects the graph and increases the number of connected components. We calculate the fraction of bridges in a wide range of real-world networks and their randomized counterparts. We find that real networks typically have more bridges than their completely randomized counterparts, but they have a fraction of bridges that is very similar to their degree-preserving randomizations. We define an edge centrality measure, called bridgeness, to quantify the importance of a bridge in damaging a network. We find that certain real networks have a very large average and variance of bridgeness compared to their degree-preserving randomizations and other real networks. Finally, we offer an analytical framework to calculate the bridge fraction and the average and variance of bridgeness for uncorrelated random networks with arbitrary degree distributions.

  3. Percolation and epidemics in random clustered networks

    NASA Astrophysics Data System (ADS)

    Miller, Joel C.

    2009-08-01

    The social networks that infectious diseases spread along are typically clustered. Because of the close relation between percolation and epidemic spread, the behavior of percolation in such networks gives insight into infectious disease dynamics. A number of authors have studied percolation or epidemics in clustered networks, but the networks often contain preferential contacts in high degree nodes. We introduce a class of random clustered networks and a class of random unclustered networks with the same preferential mixing. Percolation in the clustered networks reduces the component sizes and increases the epidemic threshold compared to the unclustered networks.

  4. Random walks and diffusion on networks

    NASA Astrophysics Data System (ADS)

    Masuda, Naoki; Porter, Mason A.; Lambiotte, Renaud

    2017-11-01

    Random walks are ubiquitous in the sciences, and they are interesting from both theoretical and practical perspectives. They are one of the most fundamental types of stochastic processes; can be used to model numerous phenomena, including diffusion, interactions, and opinions among humans and animals; and can be used to extract information about important entities or dense groups of entities in a network. Random walks have been studied for many decades on both regular lattices and (especially in the last couple of decades) on networks with a variety of structures. In the present article, we survey the theory and applications of random walks on networks, restricting ourselves to simple cases of single and non-adaptive random walkers. We distinguish three main types of random walks: discrete-time random walks, node-centric continuous-time random walks, and edge-centric continuous-time random walks. We first briefly survey random walks on a line, and then we consider random walks on various types of networks. We extensively discuss applications of random walks, including ranking of nodes (e.g., PageRank), community detection, respondent-driven sampling, and opinion models such as voter models.

  5. Apparatus and method for electrical insulation in plasma discharge systems

    DOEpatents

    Rhodes, Mark A [Redwood City, CA; Fochs, Scott N [Livermore, CA

    2003-08-12

    An apparatus and method to contain plasma at optimal fill capacity of a metallic container is disclosed. The invention includes the utilization of anodized layers forming the internal surfaces of the container volume. Bias resistors are calibrated to provide constant current at variable voltage conditions. By choosing the appropriate values of the bias resistors, the voltages of the metallic container relative to the voltage of an anode are adjusted to achieve optimal plasma fill while minimizing the chance of reaching the breakdown voltage of the anodized layer.

  6. Linearized Optically Phase-Modulated Fiber Optic Links for Microwave Signal Transport

    DTIC Science & Technology

    2009-03-03

    detectors (with internal 50- Ohm resistors) capable of 40-mA dc current per detector. With this link, the linearized SFDR would improve to 133 dB/Hz4/5...the IF) limitation on the signal. All calculations consider the 3dB power loss from the hybrid combiner and 6dB loss from parallel 50- Ohm resistors...283. [25] M. Nazarathy, J. Berger, A. Ley , I. Levi, and Y. Kagan, “Externally Modulated 80 Channel Am Catv Fiber-to-feeder Distribution System Over

  7. Platinum thin film resistors as accurate and stable temperature sensors

    NASA Technical Reports Server (NTRS)

    Diehl, W.

    1984-01-01

    The measurement characteristics of thin-Pt-film temperature sensors fabricated using advanced methods are discussed. The limitations of wound-wire Pt temperature sensors and the history of Pt-film development are outlined, and the commonly used film-deposition, structuring, and trimming methods are presented in a table. The development of a family of sputtered film resistors is described in detail and illustrated with photographs of the different types. The most commonly used tolerances are reported as + or - 0.3 C + 0.5 percent of the temperature measured.

  8. Development of a ninety string solar array simulator

    NASA Technical Reports Server (NTRS)

    Vasek, Thomas E.; Birchenough, Arthur G.

    1991-01-01

    A power source was developed to support testing for the Space Station Freedom Power Management and Distribution (PMAD) DC Testbed. The intent was to simulate as closely as possible the steady-state and transient responses of a solar array. Several breadboards and one thermal prototype were built and tested. Responses were successfully verified and improved upon during successive breadboards. The completed 90-string simulator consists of four power MOSFETs, four 25 watt source resistors, and four 250 watt drain source bypass resistors per string, in addition to the control circuitry.

  9. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    DOEpatents

    Norwood, David P.

    1989-01-01

    A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

  10. Dynamic defense and network randomization for computer systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chavez, Adrian R.; Stout, William M. S.; Hamlet, Jason R.

    The various technologies presented herein relate to determining a network attack is taking place, and further to adjust one or more network parameters such that the network becomes dynamically configured. A plurality of machine learning algorithms are configured to recognize an active attack pattern. Notification of the attack can be generated, and knowledge gained from the detected attack pattern can be utilized to improve the knowledge of the algorithms to detect a subsequent attack vector(s). Further, network settings and application communications can be dynamically randomized, wherein artificial diversity converts control systems into moving targets that help mitigate the early reconnaissancemore » stages of an attack. An attack(s) based upon a known static address(es) of a critical infrastructure network device(s) can be mitigated by the dynamic randomization. Network parameters that can be randomized include IP addresses, application port numbers, paths data packets navigate through the network, application randomization, etc.« less

  11. Damage spreading in spatial and small-world random Boolean networks

    NASA Astrophysics Data System (ADS)

    Lu, Qiming; Teuscher, Christof

    2014-02-01

    The study of the response of complex dynamical social, biological, or technological networks to external perturbations has numerous applications. Random Boolean networks (RBNs) are commonly used as a simple generic model for certain dynamics of complex systems. Traditionally, RBNs are interconnected randomly and without considering any spatial extension and arrangement of the links and nodes. However, most real-world networks are spatially extended and arranged with regular, power-law, small-world, or other nonrandom connections. Here we explore the RBN network topology between extreme local connections, random small-world, and pure random networks, and study the damage spreading with small perturbations. We find that spatially local connections change the scaling of the Hamming distance at very low connectivities (K¯≪1) and that the critical connectivity of stability Ks changes compared to random networks. At higher K¯, this scaling remains unchanged. We also show that the Hamming distance of spatially local networks scales with a power law as the system size N increases, but with a different exponent for local and small-world networks. The scaling arguments for small-world networks are obtained with respect to the system sizes and strength of spatially local connections. We further investigate the wiring cost of the networks. From an engineering perspective, our new findings provide the key design trade-offs between damage spreading (robustness), the network's wiring cost, and the network's communication characteristics.

  12. Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application.

    PubMed

    Gao, Shuang; Liu, Gang; Chen, Qilai; Xue, Wuhong; Yang, Huali; Shang, Jie; Chen, Bin; Zeng, Fei; Song, Cheng; Pan, Feng; Li, Run-Wei

    2018-02-21

    Resistive random access memory (RRAM) with inherent logic-in-memory capability exhibits great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is more promising because its single polarity operation enables large-scale crossbar logic-in-memory circuits with the highest integration density and simpler peripheral control circuits. However, unipolar RRAM usually exhibits poor switching uniformity because of random activation of conducting filaments and consequently cannot meet the strict uniformity requirement for logic-in-memory application. In this contribution, a new methodology that constructs cone-shaped conducting filaments by using chemically a active metal cathode is proposed to improve unipolar switching uniformity. Such a peculiar metal cathode will react spontaneously with the oxide switching layer to form an interfacial layer, which together with the metal cathode itself can act as a load resistor to prevent the overgrowth of conducting filaments and thus make them more cone-like. In this way, the rupture of conducting filaments can be strictly limited to the tip region, making their residual parts favorable locations for subsequent filament growth and thus suppressing their random regeneration. As such, a novel "one switch + one unipolar RRAM cell" hybrid structure is capable to realize all 16 Boolean logic functions for large-scale logic-in-memory circuits.

  13. Spectrum of walk matrix for Koch network and its application

    NASA Astrophysics Data System (ADS)

    Xie, Pinchen; Lin, Yuan; Zhang, Zhongzhi

    2015-06-01

    Various structural and dynamical properties of a network are encoded in the eigenvalues of walk matrix describing random walks on the network. In this paper, we study the spectra of walk matrix of the Koch network, which displays the prominent scale-free and small-world features. Utilizing the particular architecture of the network, we obtain all the eigenvalues and their corresponding multiplicities. Based on the link between the eigenvalues of walk matrix and random target access time defined as the expected time for a walker going from an arbitrary node to another one selected randomly according to the steady-state distribution, we then derive an explicit solution to the random target access time for random walks on the Koch network. Finally, we corroborate our computation for the eigenvalues by enumerating spanning trees in the Koch network, using the connection governing eigenvalues and spanning trees, where a spanning tree of a network is a subgraph of the network, that is, a tree containing all the nodes.

  14. Collective relaxation dynamics of small-world networks

    NASA Astrophysics Data System (ADS)

    Grabow, Carsten; Grosskinsky, Stefan; Kurths, Jürgen; Timme, Marc

    2015-05-01

    Complex networks exhibit a wide range of collective dynamic phenomena, including synchronization, diffusion, relaxation, and coordination processes. Their asymptotic dynamics is generically characterized by the local Jacobian, graph Laplacian, or a similar linear operator. The structure of networks with regular, small-world, and random connectivities are reasonably well understood, but their collective dynamical properties remain largely unknown. Here we present a two-stage mean-field theory to derive analytic expressions for network spectra. A single formula covers the spectrum from regular via small-world to strongly randomized topologies in Watts-Strogatz networks, explaining the simultaneous dependencies on network size N , average degree k , and topological randomness q . We present simplified analytic predictions for the second-largest and smallest eigenvalue, and numerical checks confirm our theoretical predictions for zero, small, and moderate topological randomness q , including the entire small-world regime. For large q of the order of one, we apply standard random matrix theory, thereby overarching the full range from regular to randomized network topologies. These results may contribute to our analytic and mechanistic understanding of collective relaxation phenomena of network dynamical systems.

  15. Collective relaxation dynamics of small-world networks.

    PubMed

    Grabow, Carsten; Grosskinsky, Stefan; Kurths, Jürgen; Timme, Marc

    2015-05-01

    Complex networks exhibit a wide range of collective dynamic phenomena, including synchronization, diffusion, relaxation, and coordination processes. Their asymptotic dynamics is generically characterized by the local Jacobian, graph Laplacian, or a similar linear operator. The structure of networks with regular, small-world, and random connectivities are reasonably well understood, but their collective dynamical properties remain largely unknown. Here we present a two-stage mean-field theory to derive analytic expressions for network spectra. A single formula covers the spectrum from regular via small-world to strongly randomized topologies in Watts-Strogatz networks, explaining the simultaneous dependencies on network size N, average degree k, and topological randomness q. We present simplified analytic predictions for the second-largest and smallest eigenvalue, and numerical checks confirm our theoretical predictions for zero, small, and moderate topological randomness q, including the entire small-world regime. For large q of the order of one, we apply standard random matrix theory, thereby overarching the full range from regular to randomized network topologies. These results may contribute to our analytic and mechanistic understanding of collective relaxation phenomena of network dynamical systems.

  16. Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

    NASA Technical Reports Server (NTRS)

    Krasowski, Michael J.

    2011-01-01

    A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

  17. Dynamics of periodic spring-mass chain coupled with an electric transmission line

    NASA Astrophysics Data System (ADS)

    Belloni, Edoardo; Cenedese, Mattia; Braghin, Francesco

    2017-04-01

    Periodic structures have received large interest due to their peculiar behavior: they have band gaps, that is portions of the frequency response along with any wave incoming in the structure is reflected. Numerous are the applications, like metamaterials and locally resonant structures. Nowadays, new possibilities could come from mechanical periodic structures that are connected to an electrical transmission line, periodic in turn. Starting from this idea, this paper analyses ideal a mono-atomic spring-mass chain, considering the springs connected to a periodic electric network, composed by inductances (and resistors): these simple examples will show how the frequency response is affected. In particular, the mutual influence between the electric and mechanical domain is highlighted, and the contribution of parameters on band gap positioning and design is explored. Details are provided about vibration modes and wave transmission.

  18. Stability and dynamical properties of material flow systems on random networks

    NASA Astrophysics Data System (ADS)

    Anand, K.; Galla, T.

    2009-04-01

    The theory of complex networks and of disordered systems is used to study the stability and dynamical properties of a simple model of material flow networks defined on random graphs. In particular we address instabilities that are characteristic of flow networks in economic, ecological and biological systems. Based on results from random matrix theory, we work out the phase diagram of such systems defined on extensively connected random graphs, and study in detail how the choice of control policies and the network structure affects stability. We also present results for more complex topologies of the underlying graph, focussing on finitely connected Erdös-Réyni graphs, Small-World Networks and Barabási-Albert scale-free networks. Results indicate that variability of input-output matrix elements, and random structures of the underlying graph tend to make the system less stable, while fast price dynamics or strong responsiveness to stock accumulation promote stability.

  19. Multi-agent coordination in directed moving neighbourhood random networks

    NASA Astrophysics Data System (ADS)

    Shang, Yi-Lun

    2010-07-01

    This paper considers the consensus problem of dynamical multiple agents that communicate via a directed moving neighbourhood random network. Each agent performs random walk on a weighted directed network. Agents interact with each other through random unidirectional information flow when they coincide in the underlying network at a given instant. For such a framework, we present sufficient conditions for almost sure asymptotic consensus. Numerical examples are taken to show the effectiveness of the obtained results.

  20. A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

    NASA Astrophysics Data System (ADS)

    Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

    2017-04-01

    A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

  1. Equivalent circuit for the characterization of the resonance mode in piezoelectric systems

    NASA Astrophysics Data System (ADS)

    Fernández-Afonso, Y.; García-Zaldívar, O.; Calderón-Piñar, F.

    2015-12-01

    The impedance properties in polarized piezoelectric can be described by electric equivalent circuits. The classic circuit used in the literature to describe real systems is formed by one resistor (R), one inductance (L) and one capacitance C connected in series and one capacity (C0) connected in parallel with the formers. Nevertheless, the equation that describe the resonance and anti-resonance frequencies depends on a complex manner of R, L, C and C0. In this work is proposed a simpler model formed by one inductance (L) and one capacity (C) in series; one capacity (C0) in parallel; one resistor (RP) in parallel and one resistor (RS) in series with other components. Unlike the traditional circuit, the equivalent circuit elements in the proposed model can be simply determined by knowing the experimental values of the resonance frequency fr, anti-resonance frequency fa, impedance module at resonance frequency |Zr|, impedance module at anti-resonance frequency |Za| and low frequency capacitance C0, without fitting the impedance experimental data to the obtained equation.

  2. [Design and experiment of a needle-to-cylinder electrode structure realizing the negative DC glow discharge in ambient air].

    PubMed

    Li, Hua; Wei, Chang-Yan; Liu, Chun-Xia; Shen, Xian-Hao; Chen, Zhen-Cheng

    2014-07-01

    A new needle-to-cylinder electrode structure was designed to realize the stable glow discharge in ambient air. The stainless steel needle tip with diameter 56.4 microm and the copper cylinder with diameter 4mm were chosen as the cathode and the anode respectively, which were kept parallel by accurate mechanical structure. In the condition that the distance between the needle and the cylinder is 2 mm, the ballasting resistor is 10 M(omega), the discharge resistor is 10 M(omega), the testing resistor is 1 k(omega), and the discharge voltage is -2 740 V, without air flow in ambient air and at room temperature, the stable glow discharge between the needle and the cylinder was realized. Three different discharge modes can be observed: corona discharge, glow discharge and spark, which were verified by the discharge waveform stored in the oscilloscope, and the discharge pictures were recorded by digital camera. The needle-to-cylinder electrode structure is easy to fabricate by the MEMS technology, which can be used as the ion source of the portable analyzing instruments.

  3. Students conception and perception of simple electrical circuit

    NASA Astrophysics Data System (ADS)

    Setyani, ND; Suparmi; Sarwanto; Handhika, J.

    2017-11-01

    This research aims to describe the profile of the students’ conception and perception on the simple electrical circuit. The results of this research suppose to be used as a reference by teachers to use learning models or strategies to improve understanding the physics concept. The research method used is descriptive qualitative. Research subjects are the students of physics education program, Universitas Sebelas Maret, Surakarta, Indonesia (49 students). The results showed that students have alternative conceptions. Their conceptions are (1) a high-voltage wire has an electric current and can cause electric shock, (2) the potential difference and the value of resistance used in a circuit is influenced by electric current, (3) the value of resistance of a lamp is proportional to the filament thickness, (4) the amount of electric current that coming out from the positive pole battery is the same for all type of circuit, in series or parallel (battery is constant current sources), (5) the current at any resistor in the series circuit is influenced by the resistor used, (6) the resistor consume the current through it. This incorrect conception can cause misconceptions.

  4. Precision envelope detector and linear rectifier circuitry

    DOEpatents

    Davis, Thomas J.

    1980-01-01

    Disclosed is a method and apparatus for the precise linear rectification and envelope detection of oscillatory signals. The signal is applied to a voltage-to-current converter which supplies current to a constant current sink. The connection between the converter and the sink is also applied through a diode and an output load resistor to a ground connection. The connection is also connected to ground through a second diode of opposite polarity from the diode in series with the load resistor. Very small amplitude voltage signals applied to the converter will cause a small change in the output current of the converter, and the difference between the output current and the constant current sink will be applied either directly to ground through the single diode, or across the output load resistor, dependent upon the polarity. Disclosed also is a full-wave rectifier utilizing constant current sinks and voltage-to-current converters. Additionally, disclosed is a combination of the voltage-to-current converters with differential integrated circuit preamplifiers to boost the initial signal amplitude, and with low pass filtering applied so as to obtain a video or signal envelope output.

  5. Random graph models of social networks.

    PubMed

    Newman, M E J; Watts, D J; Strogatz, S H

    2002-02-19

    We describe some new exactly solvable models of the structure of social networks, based on random graphs with arbitrary degree distributions. We give models both for simple unipartite networks, such as acquaintance networks, and bipartite networks, such as affiliation networks. We compare the predictions of our models to data for a number of real-world social networks and find that in some cases, the models are in remarkable agreement with the data, whereas in others the agreement is poorer, perhaps indicating the presence of additional social structure in the network that is not captured by the random graph.

  6. Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

    NASA Astrophysics Data System (ADS)

    Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

    2018-02-01

    Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

  7. The investigation of social networks based on multi-component random graphs

    NASA Astrophysics Data System (ADS)

    Zadorozhnyi, V. N.; Yudin, E. B.

    2018-01-01

    The methods of non-homogeneous random graphs calibration are developed for social networks simulation. The graphs are calibrated by the degree distributions of the vertices and the edges. The mathematical foundation of the methods is formed by the theory of random graphs with the nonlinear preferential attachment rule and the theory of Erdôs-Rényi random graphs. In fact, well-calibrated network graph models and computer experiments with these models would help developers (owners) of the networks to predict their development correctly and to choose effective strategies for controlling network projects.

  8. High linearity current communicating passive mixer employing a simple resistor bias

    NASA Astrophysics Data System (ADS)

    Rongjiang, Liu; Guiliang, Guo; Yuepeng, Yan

    2013-03-01

    A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB.

  9. MULTIPLIER CIRCUIT

    DOEpatents

    Thomas, R.E.

    1959-01-20

    An electronic circuit is presented for automatically computing the product of two selected variables by multiplying the voltage pulses proportional to the variables. The multiplier circuit has a plurality of parallel resistors of predetermined values connected through separate gate circults between a first input and the output terminal. One voltage pulse is applied to thc flrst input while the second voltage pulse is applied to control circuitry for the respective gate circuits. Thc magnitude of the second voltage pulse selects the resistors upon which the first voltage pulse is imprcssed, whereby the resultant output voltage is proportional to the product of the input voltage pulses

  10. A survey and analysis of experimental hydrogen sensors

    NASA Technical Reports Server (NTRS)

    Hunter, Gary W.

    1992-01-01

    In order to ascertain the applicability of hydrogen sensors to aerospace applications, a survey was conducted of promising experimental point-contact hydrogen sensors and their operation was analyzed. The techniques discussed are metal-oxide-semiconductor or MOS based sensors, catalytic resistor sensors, acoustic wave detectors, and pyroelectric detectors. All of these sensors depend on the interaction of hydrogen with Pd or a Pd-alloy. It is concluded that no single technique will meet the needs of aerospace applications but a combination of approaches is necessary. The most promising combination is an MOS based sensor with a catalytic resistor.

  11. The use of hybrid integrated circuit techniques in biotelemetry applications

    NASA Technical Reports Server (NTRS)

    Fryer, T. B.

    1977-01-01

    A review is presented of some features of hybrid integrated circuits that make their use advantageous in miniature biotelemetry applications. The various techniques for fabricating resistors, capacitors and interconnections by both thin film and thick film technology are discussed. The use of chip capacitors, resistors, and especially standard IC chips on substrates with fired-on interconnection patterns is emphasized. The review is designed primarily to acquaint biotelemetry users and designers with an overview of this fabrication technique so that they can better communicate their needs with an understanding of its limitations and advantages to facilities specializing in hybrid construction.

  12. Noise properties in the ideal Kirchhoff-Law-Johnson-Noise secure communication system.

    PubMed

    Gingl, Zoltan; Mingesz, Robert

    2014-01-01

    In this paper we determine the noise properties needed for unconditional security for the ideal Kirchhoff-Law-Johnson-Noise (KLJN) secure key distribution system using simple statistical analysis. It has already been shown using physical laws that resistors and Johnson-like noise sources provide unconditional security. However real implementations use artificial noise generators, therefore it is a question if other kind of noise sources and resistor values could be used as well. We answer this question and in the same time we provide a theoretical basis to analyze real systems as well.

  13. Generalized Kirchhoff-Law-Johnson-Noise (KLJN) secure key exchange system using arbitrary resistors.

    PubMed

    Vadai, Gergely; Mingesz, Robert; Gingl, Zoltan

    2015-09-03

    The Kirchhoff-Law-Johnson-Noise (KLJN) secure key exchange system has been introduced as a simple, very low cost and efficient classical physical alternative to quantum key distribution systems. The ideal system uses only a few electronic components-identical resistor pairs, switches and interconnecting wires-in order to guarantee perfectly protected data transmission. We show that a generalized KLJN system can provide unconditional security even if it is used with significantly less limitations. The more universal conditions ease practical realizations considerably and support more robust protection against attacks. Our theoretical results are confirmed by numerical simulations.

  14. Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

    NASA Astrophysics Data System (ADS)

    Torres, Williams Savero; Marty, Alain; Laczkowski, Piotr; Jamet, Matthieu; Vila, Laurent; Attané, Jean-Philippe

    2018-02-01

    Determination of spin accumulations and spin currents is essential for a deep understanding of spin transport in nanostructures and further optimization of spintronic devices. So far, they are easily obtained using different approaches in nanostructures composed of few elements; however their calculation becomes complicated as the number of elements increases. Here, we propose a 1-D spin resistor approach to calculate analytically spin accumulations, spin currents and magneto-resistances in heterostructures. Our method, particularly applied to multi-terminal metallic nanostructures, provides a fast and systematic mean to determine such spin properties in structures where conventional methods remain complex.

  15. Random matrix approach to plasmon resonances in the random impedance network model of disordered nanocomposites

    NASA Astrophysics Data System (ADS)

    Olekhno, N. A.; Beltukov, Y. M.

    2018-05-01

    Random impedance networks are widely used as a model to describe plasmon resonances in disordered metal-dielectric and other two-component nanocomposites. In the present work, the spectral properties of resonances in random networks are studied within the framework of the random matrix theory. We have shown that the appropriate ensemble of random matrices for the considered problem is the Jacobi ensemble (the MANOVA ensemble). The obtained analytical expressions for the density of states in such resonant networks show a good agreement with the results of numerical simulations in a wide range of metal filling fractions 0

  16. CMOS image sensor with contour enhancement

    NASA Astrophysics Data System (ADS)

    Meng, Liya; Lai, Xiaofeng; Chen, Kun; Yuan, Xianghui

    2010-10-01

    Imitating the signal acquisition and processing of vertebrate retina, a CMOS image sensor with bionic pre-processing circuit is designed. Integration of signal-process circuit on-chip can reduce the requirement of bandwidth and precision of the subsequent interface circuit, and simplify the design of the computer-vision system. This signal pre-processing circuit consists of adaptive photoreceptor, spatial filtering resistive network and Op-Amp calculation circuit. The adaptive photoreceptor unit with a dynamic range of approximately 100 dB has a good self-adaptability for the transient changes in light intensity instead of intensity level itself. Spatial low-pass filtering resistive network used to mimic the function of horizontal cell, is composed of the horizontal resistor (HRES) circuit and OTA (Operational Transconductance Amplifier) circuit. HRES circuit, imitating dendrite of the neuron cell, comprises of two series MOS transistors operated in weak inversion region. Appending two diode-connected n-channel transistors to a simple transconductance amplifier forms the OTA Op-Amp circuit, which provides stable bias voltage for the gate of MOS transistors in HRES circuit, while serves as an OTA voltage follower to provide input voltage for the network nodes. The Op-Amp calculation circuit with a simple two-stage Op-Amp achieves the image contour enhancing. By adjusting the bias voltage of the resistive network, the smoothing effect can be tuned to change the effect of image's contour enhancement. Simulations of cell circuit and 16×16 2D circuit array are implemented using CSMC 0.5μm DPTM CMOS process.

  17. Thermal noise calculation method for precise estimation of the signal-to-noise ratio of ultra-low-field MRI with an atomic magnetometer.

    PubMed

    Yamashita, Tatsuya; Oida, Takenori; Hamada, Shoji; Kobayashi, Tetsuo

    2012-02-01

    In recent years, there has been considerable interest in developing an ultra-low-field magnetic resonance imaging (ULF-MRI) system using an optically pumped atomic magnetometer (OPAM). However, a precise estimation of the signal-to-noise ratio (SNR) of ULF-MRI has not been carried out. Conventionally, to calculate the SNR of an MR image, thermal noise, also called Nyquist noise, has been estimated by considering a resistor that is electrically equivalent to a biological-conductive sample and is connected in series to a pickup coil. However, this method has major limitations in that the receiver has to be a coil and that it cannot be applied directly to a system using OPAM. In this paper, we propose a method to estimate the thermal noise of an MRI system using OPAM. We calculate the thermal noise from the variance of the magnetic sensor output produced by current-dipole moments that simulate thermally fluctuating current sources in a biological sample. We assume that the random magnitude of the current dipole in each volume element of the biological sample is described by the Maxwell-Boltzmann distribution. The sensor output produced by each current-dipole moment is calculated either by an analytical formula or a numerical method based on the boundary element method. We validate the proposed method by comparing our results with those obtained by conventional methods that consider resistors connected in series to a pickup coil using single-layered sphere, multi-layered sphere, and realistic head models. Finally, we apply the proposed method to the ULF-MRI model using OPAM as the receiver with multi-layered sphere and realistic head models and estimate their SNR. Copyright © 2011 Elsevier Inc. All rights reserved.

  18. New scaling relation for information transfer in biological networks

    PubMed Central

    Kim, Hyunju; Davies, Paul; Walker, Sara Imari

    2015-01-01

    We quantify characteristics of the informational architecture of two representative biological networks: the Boolean network model for the cell-cycle regulatory network of the fission yeast Schizosaccharomyces pombe (Davidich et al. 2008 PLoS ONE 3, e1672 (doi:10.1371/journal.pone.0001672)) and that of the budding yeast Saccharomyces cerevisiae (Li et al. 2004 Proc. Natl Acad. Sci. USA 101, 4781–4786 (doi:10.1073/pnas.0305937101)). We compare our results for these biological networks with the same analysis performed on ensembles of two different types of random networks: Erdös–Rényi and scale-free. We show that both biological networks share features in common that are not shared by either random network ensemble. In particular, the biological networks in our study process more information than the random networks on average. Both biological networks also exhibit a scaling relation in information transferred between nodes that distinguishes them from random, where the biological networks stand out as distinct even when compared with random networks that share important topological properties, such as degree distribution, with the biological network. We show that the most biologically distinct regime of this scaling relation is associated with a subset of control nodes that regulate the dynamics and function of each respective biological network. Information processing in biological networks is therefore interpreted as an emergent property of topology (causal structure) and dynamics (function). Our results demonstrate quantitatively how the informational architecture of biologically evolved networks can distinguish them from other classes of network architecture that do not share the same informational properties. PMID:26701883

  19. Hodge Decomposition of Information Flow on Small-World Networks.

    PubMed

    Haruna, Taichi; Fujiki, Yuuya

    2016-01-01

    We investigate the influence of the small-world topology on the composition of information flow on networks. By appealing to the combinatorial Hodge theory, we decompose information flow generated by random threshold networks on the Watts-Strogatz model into three components: gradient, harmonic and curl flows. The harmonic and curl flows represent globally circular and locally circular components, respectively. The Watts-Strogatz model bridges the two extreme network topologies, a lattice network and a random network, by a single parameter that is the probability of random rewiring. The small-world topology is realized within a certain range between them. By numerical simulation we found that as networks become more random the ratio of harmonic flow to the total magnitude of information flow increases whereas the ratio of curl flow decreases. Furthermore, both quantities are significantly enhanced from the level when only network structure is considered for the network close to a random network and a lattice network, respectively. Finally, the sum of these two ratios takes its maximum value within the small-world region. These findings suggest that the dynamical information counterpart of global integration and that of local segregation are the harmonic flow and the curl flow, respectively, and that a part of the small-world region is dominated by internal circulation of information flow.

  20. Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

    PubMed

    Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

    2014-10-01

    The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

  1. Creating, generating and comparing random network models with NetworkRandomizer.

    PubMed

    Tosadori, Gabriele; Bestvina, Ivan; Spoto, Fausto; Laudanna, Carlo; Scardoni, Giovanni

    2016-01-01

    Biological networks are becoming a fundamental tool for the investigation of high-throughput data in several fields of biology and biotechnology. With the increasing amount of information, network-based models are gaining more and more interest and new techniques are required in order to mine the information and to validate the results. To fill the validation gap we present an app, for the Cytoscape platform, which aims at creating randomised networks and randomising existing, real networks. Since there is a lack of tools that allow performing such operations, our app aims at enabling researchers to exploit different, well known random network models that could be used as a benchmark for validating real, biological datasets. We also propose a novel methodology for creating random weighted networks, i.e. the multiplication algorithm, starting from real, quantitative data. Finally, the app provides a statistical tool that compares real versus randomly computed attributes, in order to validate the numerical findings. In summary, our app aims at creating a standardised methodology for the validation of the results in the context of the Cytoscape platform.

  2. Metal Nanowires: Synthesis, Processing, and Structure-Property Relationships in the Context of Flexible Transparent Conducting Films

    NASA Astrophysics Data System (ADS)

    Rathmell, Aaron R.

    The demand for flat-panel televisions, e-readers, smart-phones, and touch-screens has been increasing over the past few years and will continue to increase for the foreseeable future. Each of these devices contains a transparent conductor, which is usually indium tin oxide (ITO) because of its high transparency and low sheet resistance. ITO films, however, are brittle, expensive, and difficult to deposit, and because of these problems, alternative transparent electrodes are being studied. One cheap and flexible alternative to ITO is films of randomly oriented copper nanowires. We have developed a synthesis to make long, thin, and well-dispersed copper nanowires that can be suspended in an ink and coated onto a substrate to make flexible transparent films. These films are then made conductive by annealing in a hydrogen atmosphere or by a solution processing technique that can be done in air at room temperature. The resulting flexible transparent conducting films display transparencies and sheet resistance values comparable to ITO. Since it is well known that copper oxidizes, we also developed a synthesis to coat the copper nanowires with a layer of nickel in solution. Our measurements indicated that copper nanowires would double their sheet resistance in 3 months, but the sheet resistance of cupronickel nanowire films containing 20 mole% nickel will double in about 400 years. The addition of nickel to the copper nanowires also gave the film a more neutral grey appearance. The nickel coating can also be applied to the copper nanowires after the film is formed via an electroless plating method. To further optimize the properties of our transparent conductors we developed a framework to understand how the dimensions and area coverage of the nanowires affect the overall film properties. To quantify the effect of length on the sheet resistance and transmittance, wires with different lengths but the same diameter were synthesized to make transparent conducting films and finite-difference time-domain calculations were used to determine the effect of the nanowire diameter on the film's transmittance. The experimental data and calculations were then incorporated into random resistor network simulations that demonstrated that wires with an aspect ratio of 400 or higher are required to make a network that transmits >90% of visible light while maintaining a sheet resistance below 100 O/sq-1. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make copper and cupronickel nanowire films a promising alternative for the sustainable, efficient production of transparent conductors.

  3. Systemic risk on different interbank network topologies

    NASA Astrophysics Data System (ADS)

    Lenzu, Simone; Tedeschi, Gabriele

    2012-09-01

    In this paper we develop an interbank market with heterogeneous financial institutions that enter into lending agreements on different network structures. Credit relationships (links) evolve endogenously via a fitness mechanism based on agents' performance. By changing the agent's trust on its neighbor's performance, interbank linkages self-organize themselves into very different network architectures, ranging from random to scale-free topologies. We study which network architecture can make the financial system more resilient to random attacks and how systemic risk spreads over the network. To perturb the system, we generate a random attack via a liquidity shock. The hit bank is not automatically eliminated, but its failure is endogenously driven by its incapacity to raise liquidity in the interbank network. Our analysis shows that a random financial network can be more resilient than a scale free one in case of agents' heterogeneity.

  4. Effects of topology on network evolution

    NASA Astrophysics Data System (ADS)

    Oikonomou, Panos; Cluzel, Philippe

    2006-08-01

    The ubiquity of scale-free topology in nature raises the question of whether this particular network design confers an evolutionary advantage. A series of studies has identified key principles controlling the growth and the dynamics of scale-free networks. Here, we use neuron-based networks of boolean components as a framework for modelling a large class of dynamical behaviours in both natural and artificial systems. Applying a training algorithm, we characterize how networks with distinct topologies evolve towards a pre-established target function through a process of random mutations and selection. We find that homogeneous random networks and scale-free networks exhibit drastically different evolutionary paths. Whereas homogeneous random networks accumulate neutral mutations and evolve by sparse punctuated steps, scale-free networks evolve rapidly and continuously. Remarkably, this latter property is robust to variations of the degree exponent. In contrast, homogeneous random networks require a specific tuning of their connectivity to optimize their ability to evolve. These results highlight an organizing principle that governs the evolution of complex networks and that can improve the design of engineered systems.

  5. Modeling Training Site Vegetation Coverage Probability with a Random Optimizing Procedure: An Artificial Neural Network Approach.

    DTIC Science & Technology

    1998-05-01

    Coverage Probability with a Random Optimization Procedure: An Artificial Neural Network Approach by Biing T. Guan, George Z. Gertner, and Alan B...Modeling Training Site Vegetation Coverage Probability with a Random Optimizing Procedure: An Artificial Neural Network Approach 6. AUTHOR(S) Biing...coverage based on past coverage. Approach A literature survey was conducted to identify artificial neural network analysis techniques applicable for

  6. Distributed Detection with Collisions in a Random, Single-Hop Wireless Sensor Network

    DTIC Science & Technology

    2013-05-26

    public release; distribution is unlimited. Distributed detection with collisions in a random, single-hop wireless sensor network The views, opinions...1274 2 ABSTRACT Distributed detection with collisions in a random, single-hop wireless sensor network Report Title We consider the problem of... WIRELESS SENSOR NETWORK Gene T. Whipps?† Emre Ertin† Randolph L. Moses† ?U.S. Army Research Laboratory, Adelphi, MD 20783 †The Ohio State University

  7. Effective comparative analysis of protein-protein interaction networks by measuring the steady-state network flow using a Markov model.

    PubMed

    Jeong, Hyundoo; Qian, Xiaoning; Yoon, Byung-Jun

    2016-10-06

    Comparative analysis of protein-protein interaction (PPI) networks provides an effective means of detecting conserved functional network modules across different species. Such modules typically consist of orthologous proteins with conserved interactions, which can be exploited to computationally predict the modules through network comparison. In this work, we propose a novel probabilistic framework for comparing PPI networks and effectively predicting the correspondence between proteins, represented as network nodes, that belong to conserved functional modules across the given PPI networks. The basic idea is to estimate the steady-state network flow between nodes that belong to different PPI networks based on a Markov random walk model. The random walker is designed to make random moves to adjacent nodes within a PPI network as well as cross-network moves between potential orthologous nodes with high sequence similarity. Based on this Markov random walk model, we estimate the steady-state network flow - or the long-term relative frequency of the transitions that the random walker makes - between nodes in different PPI networks, which can be used as a probabilistic score measuring their potential correspondence. Subsequently, the estimated scores can be used for detecting orthologous proteins in conserved functional modules through network alignment. Through evaluations based on multiple real PPI networks, we demonstrate that the proposed scheme leads to improved alignment results that are biologically more meaningful at reduced computational cost, outperforming the current state-of-the-art algorithms. The source code and datasets can be downloaded from http://www.ece.tamu.edu/~bjyoon/CUFID .

  8. Modeling and characterization of supercapacitors for wireless sensor network applications

    NASA Astrophysics Data System (ADS)

    Zhang, Ying; Yang, Hengzhao

    A simple circuit model is developed to describe supercapacitor behavior, which uses two resistor-capacitor branches with different time constants to characterize the charging and redistribution processes, and a variable leakage resistance to characterize the self-discharge process. The parameter values of a supercapacitor can be determined by a charging-redistribution experiment and a self-discharge experiment. The modeling and characterization procedures are illustrated using a 22F supercapacitor. The accuracy of the model is compared with that of other models often used in power electronics applications. The results show that the proposed model has better accuracy in characterizing the self-discharge process while maintaining similar performance as other models during charging and redistribution processes. Additionally, the proposed model is evaluated in a simplified energy storage system for self-powered wireless sensors. The model performance is compared with that of a commonly used energy recursive equation (ERE) model. The results demonstrate that the proposed model can predict the evolution profile of voltage across the supercapacitor more accurately than the ERE model, and therefore provides a better alternative for supporting research on storage system design and power management for wireless sensor networks.

  9. Critical phenomena at a first-order phase transition in a lattice of glow lamps: Experimental findings and analogy to neural activity

    NASA Astrophysics Data System (ADS)

    Minati, Ludovico; de Candia, Antonio; Scarpetta, Silvia

    2016-07-01

    Networks of non-linear electronic oscillators have shown potential as physical models of neural dynamics. However, two properties of brain activity, namely, criticality and metastability, remain under-investigated with this approach. Here, we present a simple circuit that exhibits both phenomena. The apparatus consists of a two-dimensional square lattice of capacitively coupled glow (neon) lamps. The dynamics of lamp breakdown (flash) events are controlled by a DC voltage globally connected to all nodes via fixed resistors. Depending on this parameter, two phases having distinct event rate and degree of spatiotemporal order are observed. The transition between them is hysteretic, thus a first-order one, and it is possible to enter a metastability region, wherein, approaching a spinodal point, critical phenomena emerge. Avalanches of events occur according to power-law distributions having exponents ≈3/2 for size and ≈2 for duration, and fractal structure is evident as power-law scaling of the Fano factor. These critical exponents overlap observations in biological neural networks; hence, this circuit may have value as building block to realize corresponding physical models.

  10. Critical phenomena at a first-order phase transition in a lattice of glow lamps: Experimental findings and analogy to neural activity

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Minati, Ludovico, E-mail: lminati@ieee.org, E-mail: ludovico.minati@unitn.it, E-mail: ludovico.minati@ifj.edu; Complex Systems Theory Department, Institute of Nuclear Physics, Polish Academy of Sciences, Kraków; Candia, Antonio de

    2016-07-15

    Networks of non-linear electronic oscillators have shown potential as physical models of neural dynamics. However, two properties of brain activity, namely, criticality and metastability, remain under-investigated with this approach. Here, we present a simple circuit that exhibits both phenomena. The apparatus consists of a two-dimensional square lattice of capacitively coupled glow (neon) lamps. The dynamics of lamp breakdown (flash) events are controlled by a DC voltage globally connected to all nodes via fixed resistors. Depending on this parameter, two phases having distinct event rate and degree of spatiotemporal order are observed. The transition between them is hysteretic, thus a first-ordermore » one, and it is possible to enter a metastability region, wherein, approaching a spinodal point, critical phenomena emerge. Avalanches of events occur according to power-law distributions having exponents ≈3/2 for size and ≈2 for duration, and fractal structure is evident as power-law scaling of the Fano factor. These critical exponents overlap observations in biological neural networks; hence, this circuit may have value as building block to realize corresponding physical models.« less

  11. Spiral Microstrip Antenna with Resistance

    NASA Technical Reports Server (NTRS)

    Shively, David G. (Inventor)

    1998-01-01

    A spiral microstrip antenna having resistor elements embedded in each of the spiral arms is provided. The antenna is constructed using a conductive back plane as a base. The back plane supports a dielectric slab having a thickness between one-sixteenth and one-quarter of an inch. A square spiral, having either two or four arms, is attached to the dielectric slab. Each arm of the spiral has resistor elements thereby dissipating an excess energy not already emitted through radiation. The entire configuration provides a thin, flat, high gain, wide bandwidth antenna which requires no underlying cavity. The configuration allows the antenna to be mounted conformably on an aircraft surface.

  12. Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

    NASA Astrophysics Data System (ADS)

    Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

    2018-06-01

    The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

  13. Research pressure instrumentation for NASA Space Shuttle main engine, modification no. 5

    NASA Technical Reports Server (NTRS)

    Anderson, P. J.; Nussbaum, P.; Gustafson, G.

    1984-01-01

    The objective of the research project described is to define and demonstrate methods to advance the state of the art of pressure sensors for the space shuttle main engine (SSME). Silicon piezoresistive technology was utilized in completing tasks: generation and testing of three transducer design concepts for solid state applications; silicon resistor characterization at cryogenic temperatures; experimental chip mounting characterization; frequency response optimization and prototype design and fabrication. Excellent silicon sensor performance was demonstrated at liquid nitrogen temperature. A silicon resistor ion implant dose was customized for SSME temperature requirements. A basic acoustic modeling software program was developed as a design tool to evaluate frequency response characteristics.

  14. VOLTAGE REGULATOR

    DOEpatents

    Von Eschen, R.L.; Scheele, P.F.

    1962-04-24

    A transistorized voltage regulator which provides very close voitage regulation up to about 180 deg F is described. A diode in the positive line provides a constant voltage drop from the input to a regulating transistor emitter. An amplifier is coupled to the positive line through a resistor and is connected between a difference circuit and the regulating transistor base which is negative due to the difference in voltage drop across thc diode and the resistor so that a change in the regulator output causes the amplifier to increase or decrease the base voltage and current and incrcase or decrease the transistor impedance to return the regulator output to normal. (AEC)

  15. Study on the characteristics of hysteresis loop and resistance of glow discharge plasma using argon gas

    NASA Astrophysics Data System (ADS)

    Mathew, Prijil; Sajith Mathews, T.; Kurian, P. J.; Chattopadyay, P. K.

    2018-05-01

    Hysteresis in discharge current is produced in a low-pressure, magnetic field free, Glow discharge plasma by varying discharge voltage. The variation in area of the hysteresis loops with pressure, electrode distance and load resistor studied. To understand, the nonlinear behaviour of the I-V characteristics, the changes in gas resistance with electrode voltage, pressure and load resistor were studied. After many trials we propose the best suitable empirical equation for the exponential decrease of the gas resistance with electrode voltage as; R = Rmin + Ae-0.008V, which is a novel one and matches well with our experimental results.

  16. Stochastic memory: Memory enhancement due to noise

    NASA Astrophysics Data System (ADS)

    Stotland, Alexander; di Ventra, Massimiliano

    2012-01-01

    There are certain classes of resistors, capacitors, and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2 thin films sandwiched between metallic electrodes and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.

  17. Emergency Dosimetry Using Ceramic Components in Personal Electronic Devices

    NASA Astrophysics Data System (ADS)

    Kouroukla, E. C.; Bailiff, I. K.; Terry, I.

    2014-02-01

    The rapid assessment of radiation dose to members of the public exposed to significant levels of ionizing radiation during a radiological incident presents a significant difficulty in the absence of planned radiation monitoring. However, within most personal electronic devices components such as resistors with alumina substrates can be found that have potentially suitable properties as solid state dosimeters using luminescence measurement techniques. The suitability of several types of ceramic-based components (e.g., resonators, inductors and resistors) has been previously examined using optically stimulated luminescence (OSL) and thermoluminescence (TL) techniques to establish their basic characteristics for the retrospective determination of absorbed dose. In this paper, we present results obtained with aluminum oxide surface mount resistors extracted from mobile phones that further extend this work. Very encouraging results have been obtained related to the measurement of luminescence sensitivity, dose response, reusability, limit of detection, signal reproducibility and known-dose recovery. However, the alumina exhibits a rapid loss of the latent luminescence signal with time following irradiation attributed to athermal (or anomalous) fading. The issues related to obtaining a reliable correction protocol for this loss and the detailed examinations required of the fading behavior are discussed.

  18. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    NASA Astrophysics Data System (ADS)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  19. Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

    PubMed

    Chen, Hua-Pin

    2014-01-01

    This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

  20. Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

    PubMed Central

    2014-01-01

    This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design. PMID:24982963

  1. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Peplov, Vladimir V; Saethre, Robert B

    The Spallation Neutron Source (SNS) Linac Low Energy Beam Transport (LEBT) chopper system provides fast chopping of the H- ion beam in the LEBT structure. Four identical pulsed power supplies (pulsers) create a series of 2.5 kV pulses to the four deflection electrodes floating on the focusing voltage of -50 kV. Each pulser is connected to the electrode through the network which consists of high voltage (HV) cables, a blocking capacitor, HV feed-through connectors, current-limiting resistors and transient voltage suppressors. Effective beam chopping requires minimal rise/fall time of the rectangular HV pulses on the load. In the present configuration thesemore » values are approximately 100 ns. Methods of reducing rise/fall time on the LEBT electrodes are discussed. Results of simulation and comparative measurements of the original and upgraded system on the test stand are presented. Furthermore, the effect of these changes on reliability degradation caused by arcing in the LEBT structure is discussed.« less

  2. A compact annular ring microstrip antenna for WSN applications.

    PubMed

    Wang, Daihua; Song, Linli; Zhou, Hanchang; Zhang, Zhijie

    2012-01-01

    A compact annular ring microstrip antenna was proposed for a wireless sensor network (WSN) application in the 2.4 GHz band. In this paper the major considerations of the conformal antenna design were the compact size and the impact on antenna's performance of a steel installation base. By using a chip resistor of large resistance (120 Ω) the antenna size was reduced to 38% of that a conventional annular ring patch antenna. With the addition of the steel installation base the resonant frequency of the antenna increases about 4.2% and the bandwidth reduces from 17.5% to 11.7% by adjusting the load resistance simultaneously. Several key parameters were discussed and optimized, and the antenna was fabricated and its performance measured. The antenna is well matched at 2.4 GHz with 34.2 dB return loss and -2.5 dBi peak gain. Meanwhile, it exhibits excellent radiation patterns with very low cross-polarization levels.

  3. Randomization and resilience of brain functional networks as systems-level endophenotypes of schizophrenia.

    PubMed

    Lo, Chun-Yi Zac; Su, Tsung-Wei; Huang, Chu-Chung; Hung, Chia-Chun; Chen, Wei-Ling; Lan, Tsuo-Hung; Lin, Ching-Po; Bullmore, Edward T

    2015-07-21

    Schizophrenia is increasingly conceived as a disorder of brain network organization or dysconnectivity syndrome. Functional MRI (fMRI) networks in schizophrenia have been characterized by abnormally random topology. We tested the hypothesis that network randomization is an endophenotype of schizophrenia and therefore evident also in nonpsychotic relatives of patients. Head movement-corrected, resting-state fMRI data were acquired from 25 patients with schizophrenia, 25 first-degree relatives of patients, and 29 healthy volunteers. Graphs were used to model functional connectivity as a set of edges between regional nodes. We estimated the topological efficiency, clustering, degree distribution, resilience, and connection distance (in millimeters) of each functional network. The schizophrenic group demonstrated significant randomization of global network metrics (reduced clustering, greater efficiency), a shift in the degree distribution to a more homogeneous form (fewer hubs), a shift in the distance distribution (proportionally more long-distance edges), and greater resilience to targeted attack on network hubs. The networks of the relatives also demonstrated abnormal randomization and resilience compared with healthy volunteers, but they were typically less topologically abnormal than the patients' networks and did not have abnormal connection distances. We conclude that schizophrenia is associated with replicable and convergent evidence for functional network randomization, and a similar topological profile was evident also in nonpsychotic relatives, suggesting that this is a systems-level endophenotype or marker of familial risk. We speculate that the greater resilience of brain networks may confer some fitness advantages on nonpsychotic relatives that could explain persistence of this endophenotype in the population.

  4. Surface modification by metal ion implantation forming metallic nanoparticles in an insulating matrix

    NASA Astrophysics Data System (ADS)

    Salvadori, M. C.; Teixeira, F. S.; Sgubin, L. G.; Cattani, M.; Brown, I. G.

    2014-08-01

    There is special interest in the incorporation of metallic nanoparticles in a surrounding dielectric matrix for obtaining composites with desirable characteristics such as for surface plasmon resonance, which can be used in photonics and sensing, and controlled surface electrical conductivity. We have investigated nanocomposites produced by metal ion implantation into insulating substrates, where the implanted metal self-assembles into nanoparticles. The nanoparticles nucleate near the maximum of the implantation depth profile (projected range), which can be estimated by computer simulation using the TRIDYN code. TRIDYN is a Monte Carlo simulation program based on the TRIM (Transport and Range of Ions in Matter) code that takes into account compositional changes in the substrate due to two factors: previously implanted dopant atoms, and sputtering of the substrate surface. Our study show that the nanoparticles form a bidimentional array buried a few nanometers below the substrate surface. We have studied Au/PMMA (polymethylmethacrylate), Pt/PMMA, Ti/alumina and Au/alumina systems. Transmission electron microscopy of the implanted samples show that metallic nanoparticles form in the insulating matrix. These nanocomposites have been characterized by measuring the resistivity of the composite layer as a function of the implantation dose. The experimental results are compared with a model based on percolation theory, in which electron transport through the composite is explained by conduction through a random resistor network formed by the metallic nanoparticles. Excellent agreement is found between the experimental results and the predictions of the theory. We conclude in that the conductivity process is due only to percolation (when the conducting elements are in geometric contact) and that the contribution from tunneling conduction is negligible.

  5. DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hauer, John F.; Mittelstadt, William; Martin, Kenneth E.

    During 2005 and 2006 the Western Electricity Coordinating Council (WECC) performed three major tests of western system dynamics. These tests used a Wide Area Measurement System (WAMS) based primarily on Phasor Measurement Units (PMUs) to determine response to events including the insertion of the 1400-MW Chief Joseph braking resistor, probing signals, and ambient events. Test security was reinforced through real-time analysis of wide area effects, and high-quality data provided dynamic profiles for interarea modes across the entire western interconnection. The tests established that low-level optimized pseudo-random ±20-MW probing with the Pacific DC Intertie (PDCI) roughly doubles the apparent noise thatmore » is natural to the power system, providing sharp dynamic information with negligible interference to system operations. Such probing is an effective alternative to use of the 1400-MW Chief Joseph dynamic brake, and it is under consideration as a standard means for assessing dynamic security.« less

  6. Percolation of localized attack on complex networks

    NASA Astrophysics Data System (ADS)

    Shao, Shuai; Huang, Xuqing; Stanley, H. Eugene; Havlin, Shlomo

    2015-02-01

    The robustness of complex networks against node failure and malicious attack has been of interest for decades, while most of the research has focused on random attack or hub-targeted attack. In many real-world scenarios, however, attacks are neither random nor hub-targeted, but localized, where a group of neighboring nodes in a network are attacked and fail. In this paper we develop a percolation framework to analytically and numerically study the robustness of complex networks against such localized attack. In particular, we investigate this robustness in Erdős-Rényi networks, random-regular networks, and scale-free networks. Our results provide insight into how to better protect networks, enhance cybersecurity, and facilitate the design of more robust infrastructures.

  7. The informational architecture of the cell.

    PubMed

    Walker, Sara Imari; Kim, Hyunju; Davies, Paul C W

    2016-03-13

    We compare the informational architecture of biological and random networks to identify informational features that may distinguish biological networks from random. The study presented here focuses on the Boolean network model for regulation of the cell cycle of the fission yeast Schizosaccharomyces pombe. We compare calculated values of local and global information measures for the fission yeast cell cycle to the same measures as applied to two different classes of random networks: Erdös-Rényi and scale-free. We report patterns in local information processing and storage that do indeed distinguish biological from random, associated with control nodes that regulate the function of the fission yeast cell-cycle network. Conversely, we find that integrated information, which serves as a global measure of 'emergent' information processing, does not differ from random for the case presented. We discuss implications for our understanding of the informational architecture of the fission yeast cell-cycle network in particular, and more generally for illuminating any distinctive physics that may be operative in life. © 2016 The Author(s).

  8. Simulation of the mechanical behavior of random fiber networks with different microstructure.

    PubMed

    Hatami-Marbini, H

    2018-05-24

    Filamentous protein networks are broadly encountered in biological systems such as cytoskeleton and extracellular matrix. Many numerical studies have been conducted to better understand the fundamental mechanisms behind the striking mechanical properties of these networks. In most of these previous numerical models, the Mikado algorithm has been used to represent the network microstructure. Here, a different algorithm is used to create random fiber networks in order to investigate possible roles of architecture on the elastic behavior of filamentous networks. In particular, random fibrous structures are generated from the growth of individual fibers from random nucleation points. We use computer simulations to determine the mechanical behavior of these networks in terms of their model parameters. The findings are presented and discussed along with the response of Mikado fiber networks. We demonstrate that these alternative networks and Mikado networks show a qualitatively similar response. Nevertheless, the overall elasticity of Mikado networks is stiffer compared to that of the networks created using the alternative algorithm. We describe the effective elasticity of both network types as a function of their line density and of the material properties of the filaments. We also characterize the ratio of bending and axial energy and discuss the behavior of these networks in terms of their fiber density distribution and coordination number.

  9. Infectious disease control using contact tracing in random and scale-free networks

    PubMed Central

    Kiss, Istvan Z; Green, Darren M; Kao, Rowland R

    2005-01-01

    Contact tracing aims to identify and isolate individuals that have been in contact with infectious individuals. The efficacy of contact tracing and the hierarchy of traced nodes—nodes with higher degree traced first—is investigated and compared on random and scale-free (SF) networks with the same number of nodes N and average connection K. For values of the transmission rate larger than a threshold, the final epidemic size on SF networks is smaller than that on corresponding random networks. While in random networks new infectious and traced nodes from all classes have similar average degrees, in SF networks the average degree of nodes that are in more advanced stages of the disease is higher at any given time. On SF networks tracing removes possible sources of infection with high average degree. However a higher tracing effort is required to control the epidemic than on corresponding random networks due to the high initial velocity of spread towards the highly connected nodes. An increased latency period fails to significantly improve contact tracing efficacy. Contact tracing has a limited effect if the removal rate of susceptible nodes is relatively high, due to the fast local depletion of susceptible nodes. PMID:16849217

  10. Efficient sampling of complex network with modified random walk strategies

    NASA Astrophysics Data System (ADS)

    Xie, Yunya; Chang, Shuhua; Zhang, Zhipeng; Zhang, Mi; Yang, Lei

    2018-02-01

    We present two novel random walk strategies, choosing seed node (CSN) random walk and no-retracing (NR) random walk. Different from the classical random walk sampling, the CSN and NR strategies focus on the influences of the seed node choice and path overlap, respectively. Three random walk samplings are applied in the Erdös-Rényi (ER), Barabási-Albert (BA), Watts-Strogatz (WS), and the weighted USAir networks, respectively. Then, the major properties of sampled subnets, such as sampling efficiency, degree distributions, average degree and average clustering coefficient, are studied. The similar conclusions can be reached with these three random walk strategies. Firstly, the networks with small scales and simple structures are conducive to the sampling. Secondly, the average degree and the average clustering coefficient of the sampled subnet tend to the corresponding values of original networks with limited steps. And thirdly, all the degree distributions of the subnets are slightly biased to the high degree side. However, the NR strategy performs better for the average clustering coefficient of the subnet. In the real weighted USAir networks, some obvious characters like the larger clustering coefficient and the fluctuation of degree distribution are reproduced well by these random walk strategies.

  11. Stochastic Models of Emerging Infectious Disease Transmission on Adaptive Random Networks

    PubMed Central

    Pipatsart, Navavat; Triampo, Wannapong

    2017-01-01

    We presented adaptive random network models to describe human behavioral change during epidemics and performed stochastic simulations of SIR (susceptible-infectious-recovered) epidemic models on adaptive random networks. The interplay between infectious disease dynamics and network adaptation dynamics was investigated in regard to the disease transmission and the cumulative number of infection cases. We found that the cumulative case was reduced and associated with an increasing network adaptation probability but was increased with an increasing disease transmission probability. It was found that the topological changes of the adaptive random networks were able to reduce the cumulative number of infections and also to delay the epidemic peak. Our results also suggest the existence of a critical value for the ratio of disease transmission and adaptation probabilities below which the epidemic cannot occur. PMID:29075314

  12. Network meta-analysis of disconnected networks: How dangerous are random baseline treatment effects?

    PubMed

    Béliveau, Audrey; Goring, Sarah; Platt, Robert W; Gustafson, Paul

    2017-12-01

    In network meta-analysis, the use of fixed baseline treatment effects (a priori independent) in a contrast-based approach is regularly preferred to the use of random baseline treatment effects (a priori dependent). That is because, often, there is not a need to model baseline treatment effects, which carry the risk of model misspecification. However, in disconnected networks, fixed baseline treatment effects do not work (unless extra assumptions are made), as there is not enough information in the data to update the prior distribution on the contrasts between disconnected treatments. In this paper, we investigate to what extent the use of random baseline treatment effects is dangerous in disconnected networks. We take 2 publicly available datasets of connected networks and disconnect them in multiple ways. We then compare the results of treatment comparisons obtained from a Bayesian contrast-based analysis of each disconnected network using random normally distributed and exchangeable baseline treatment effects to those obtained from a Bayesian contrast-based analysis of their initial connected network using fixed baseline treatment effects. For the 2 datasets considered, we found that the use of random baseline treatment effects in disconnected networks was appropriate. Because those datasets were not cherry-picked, there should be other disconnected networks that would benefit from being analyzed using random baseline treatment effects. However, there is also a risk for the normality and exchangeability assumption to be inappropriate in other datasets even though we have not observed this situation in our case study. We provide code, so other datasets can be investigated. Copyright © 2017 John Wiley & Sons, Ltd.

  13. Quasirandom geometric networks from low-discrepancy sequences

    NASA Astrophysics Data System (ADS)

    Estrada, Ernesto

    2017-08-01

    We define quasirandom geometric networks using low-discrepancy sequences, such as Halton, Sobol, and Niederreiter. The networks are built in d dimensions by considering the d -tuples of digits generated by these sequences as the coordinates of the vertices of the networks in a d -dimensional Id unit hypercube. Then, two vertices are connected by an edge if they are at a distance smaller than a connection radius. We investigate computationally 11 network-theoretic properties of two-dimensional quasirandom networks and compare them with analogous random geometric networks. We also study their degree distribution and their spectral density distributions. We conclude from this intensive computational study that in terms of the uniformity of the distribution of the vertices in the unit square, the quasirandom networks look more random than the random geometric networks. We include an analysis of potential strategies for generating higher-dimensional quasirandom networks, where it is know that some of the low-discrepancy sequences are highly correlated. In this respect, we conclude that up to dimension 20, the use of scrambling, skipping and leaping strategies generate quasirandom networks with the desired properties of uniformity. Finally, we consider a diffusive process taking place on the nodes and edges of the quasirandom and random geometric graphs. We show that the diffusion time is shorter in the quasirandom graphs as a consequence of their larger structural homogeneity. In the random geometric graphs the diffusion produces clusters of concentration that make the process more slow. Such clusters are a direct consequence of the heterogeneous and irregular distribution of the nodes in the unit square in which the generation of random geometric graphs is based on.

  14. A quasi steady state method for solving transient Darcy flow in complex 3D fractured networks accounting for matrix to fracture flow

    NASA Astrophysics Data System (ADS)

    Nœtinger, B.

    2015-02-01

    Modeling natural Discrete Fracture Networks (DFN) receives more and more attention in applied geosciences, from oil and gas industry, to geothermal recovery and aquifer management. The fractures may be either natural, or artificial in case of well stimulation. Accounting for the flow inside the fracture network, and accounting for the transfers between the matrix and the fractures, with the same level of accuracy is an important issue for calibrating the well architecture and for setting up optimal resources recovery strategies. Recently, we proposed an original method allowing to model transient pressure diffusion in the fracture network only [1]. The matrix was assumed to be impervious. A systematic approximation scheme was built, allowing to model the initial DFN by a set of N unknowns located at each identified intersection between fractures. The higher N, the higher the accuracy of the model. The main assumption was using a quasi steady state hypothesis, that states that the characteristic diffusion time over one single fracture is negligible compared with the characteristic time of the macroscopic problem, e.g. change of boundary conditions. In that context, the lowest order approximation N = 1 has the form of solving a transient problem in a resistor/capacitor network, a so-called pipe network. Its topology is the same as the network of geometrical intersections between fractures. In this paper, we generalize this approach in order to account for fluxes from matrix to fractures. The quasi steady state hypothesis at the fracture level is still kept. Then, we show that in the case of well separated time scales between matrix and fractures, the preceding model needs only to be slightly modified in order to incorporate these fluxes. The additional knowledge of the so-called matrix to fracture transfer function allows to modify the mass matrix that becomes a time convolution operator. This is reminiscent of existing space averaged transient dual porosity models.

  15. Photodiode Preamplifier for Laser Ranging With Weak Signals

    NASA Technical Reports Server (NTRS)

    Abramovici, Alexander; Chapsky, Jacob

    2007-01-01

    An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

  16. Noisy scale-free networks

    NASA Astrophysics Data System (ADS)

    Scholz, Jan; Dejori, Mathäus; Stetter, Martin; Greiner, Martin

    2005-05-01

    The impact of observational noise on the analysis of scale-free networks is studied. Various noise sources are modeled as random link removal, random link exchange and random link addition. Emphasis is on the resulting modifications for the node-degree distribution and for a functional ranking based on betweenness centrality. The implications for estimated gene-expressed networks for childhood acute lymphoblastic leukemia are discussed.

  17. Entropy of spatial network ensembles

    NASA Astrophysics Data System (ADS)

    Coon, Justin P.; Dettmann, Carl P.; Georgiou, Orestis

    2018-04-01

    We analyze complexity in spatial network ensembles through the lens of graph entropy. Mathematically, we model a spatial network as a soft random geometric graph, i.e., a graph with two sources of randomness, namely nodes located randomly in space and links formed independently between pairs of nodes with probability given by a specified function (the "pair connection function") of their mutual distance. We consider the general case where randomness arises in node positions as well as pairwise connections (i.e., for a given pair distance, the corresponding edge state is a random variable). Classical random geometric graph and exponential graph models can be recovered in certain limits. We derive a simple bound for the entropy of a spatial network ensemble and calculate the conditional entropy of an ensemble given the node location distribution for hard and soft (probabilistic) pair connection functions. Under this formalism, we derive the connection function that yields maximum entropy under general constraints. Finally, we apply our analytical framework to study two practical examples: ad hoc wireless networks and the US flight network. Through the study of these examples, we illustrate that both exhibit properties that are indicative of nearly maximally entropic ensembles.

  18. Synchronizability of random rectangular graphs

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Estrada, Ernesto, E-mail: ernesto.estrada@strath.ac.uk; Chen, Guanrong

    2015-08-15

    Random rectangular graphs (RRGs) represent a generalization of the random geometric graphs in which the nodes are embedded into hyperrectangles instead of on hypercubes. The synchronizability of RRG model is studied. Both upper and lower bounds of the eigenratio of the network Laplacian matrix are determined analytically. It is proven that as the rectangular network is more elongated, the network becomes harder to synchronize. The synchronization processing behavior of a RRG network of chaotic Lorenz system nodes is numerically investigated, showing complete consistence with the theoretical results.

  19. Toward negative Poisson's ratio composites: Investigation of the auxetic behavior of fibrous networks

    NASA Astrophysics Data System (ADS)

    Tatlier, Mehmet Seha

    Random fibrous can be found among natural and synthetic materials. Some of these random fibrous networks possess negative Poisson's ratio and they are extensively called auxetic materials. The governing mechanisms behind this counter intuitive property in random networks are yet to be understood and this kind of auxetic material remains widely under-explored. However, most of synthetic auxetic materials suffer from their low strength. This shortcoming can be rectified by developing high strength auxetic composites. The process of embedding auxetic random fibrous networks in a polymer matrix is an attractive alternate route to the manufacture of auxetic composites, however before such an approach can be developed, a methodology for designing fibrous networks with the desired negative Poisson's ratios must first be established. This requires an understanding of the factors which bring about negative Poisson's ratios in these materials. In this study, a numerical model is presented in order to investigate the auxetic behavior in compressed random fiber networks. Finite element analyses of three-dimensional stochastic fiber networks were performed to gain insight into the effects of parameters such as network anisotropy, network density, and degree of network compression on the out-of-plane Poisson's ratio and Young's modulus. The simulation results suggest that the compression is the critical parameter that gives rise to negative Poisson's ratio while anisotropy significantly promotes the auxetic behavior. This model can be utilized to design fibrous auxetic materials and to evaluate feasibility of developing auxetic composites by using auxetic fibrous networks as the reinforcing layer.

  20. Influence of Choice of Null Network on Small-World Parameters of Structural Correlation Networks

    PubMed Central

    Hosseini, S. M. Hadi; Kesler, Shelli R.

    2013-01-01

    In recent years, coordinated variations in brain morphology (e.g., volume, thickness) have been employed as a measure of structural association between brain regions to infer large-scale structural correlation networks. Recent evidence suggests that brain networks constructed in this manner are inherently more clustered than random networks of the same size and degree. Thus, null networks constructed by randomizing topology are not a good choice for benchmarking small-world parameters of these networks. In the present report, we investigated the influence of choice of null networks on small-world parameters of gray matter correlation networks in healthy individuals and survivors of acute lymphoblastic leukemia. Three types of null networks were studied: 1) networks constructed by topology randomization (TOP), 2) networks matched to the distributional properties of the observed covariance matrix (HQS), and 3) networks generated from correlation of randomized input data (COR). The results revealed that the choice of null network not only influences the estimated small-world parameters, it also influences the results of between-group differences in small-world parameters. In addition, at higher network densities, the choice of null network influences the direction of group differences in network measures. Our data suggest that the choice of null network is quite crucial for interpretation of group differences in small-world parameters of structural correlation networks. We argue that none of the available null models is perfect for estimation of small-world parameters for correlation networks and the relative strengths and weaknesses of the selected model should be carefully considered with respect to obtained network measures. PMID:23840672

  1. Immunization of Epidemics in Multiplex Networks

    PubMed Central

    Zhao, Dawei; Wang, Lianhai; Li, Shudong; Wang, Zhen; Wang, Lin; Gao, Bo

    2014-01-01

    Up to now, immunization of disease propagation has attracted great attention in both theoretical and experimental researches. However, vast majority of existing achievements are limited to the simple assumption of single layer networked population, which seems obviously inconsistent with recent development of complex network theory: each node could possess multiple roles in different topology connections. Inspired by this fact, we here propose the immunization strategies on multiplex networks, including multiplex node-based random (targeted) immunization and layer node-based random (targeted) immunization. With the theory of generating function, theoretical analysis is developed to calculate the immunization threshold, which is regarded as the most critical index for the effectiveness of addressed immunization strategies. Interestingly, both types of random immunization strategies show more efficiency in controlling disease spreading on multiplex Erdös-Rényi (ER) random networks; while targeted immunization strategies provide better protection on multiplex scale-free (SF) networks. PMID:25401755

  2. Immunization of epidemics in multiplex networks.

    PubMed

    Zhao, Dawei; Wang, Lianhai; Li, Shudong; Wang, Zhen; Wang, Lin; Gao, Bo

    2014-01-01

    Up to now, immunization of disease propagation has attracted great attention in both theoretical and experimental researches. However, vast majority of existing achievements are limited to the simple assumption of single layer networked population, which seems obviously inconsistent with recent development of complex network theory: each node could possess multiple roles in different topology connections. Inspired by this fact, we here propose the immunization strategies on multiplex networks, including multiplex node-based random (targeted) immunization and layer node-based random (targeted) immunization. With the theory of generating function, theoretical analysis is developed to calculate the immunization threshold, which is regarded as the most critical index for the effectiveness of addressed immunization strategies. Interestingly, both types of random immunization strategies show more efficiency in controlling disease spreading on multiplex Erdös-Rényi (ER) random networks; while targeted immunization strategies provide better protection on multiplex scale-free (SF) networks.

  3. Investigation into the common mode rejection ratio of the physiological signal conditioner circuit

    NASA Technical Reports Server (NTRS)

    Obrien, Edward M.

    1992-01-01

    The common mode rejection ratio (CMRR) of the single operational amplifier (op amp) differential amplifier and of the three operational amplifier differential amplifier was investigated. The three op amp differential amplifier circuit is used in the signal conditioner circuit which amplifies signals such as the electromyograph or electrocardiogram. The investigation confirmed via SPICE modeling what has been observed by others in the recent literature that the CMRR for the circuit can be maximized without precision resistor values or precisely matched op amps. This can be done if one resistor in the final stage can be adjusted either by a potentiometer or by laser trimming in the case of hybrid circuit fabrication.

  4. Origins of 1/f noise in nanostructure inclusion polymorphous silicon films

    PubMed Central

    2011-01-01

    In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature. PMID:21711802

  5. Ultra-low-noise preamplifier for condenser microphones.

    PubMed

    Starecki, Tomasz

    2010-12-01

    The paper presents the design of a low-noise preamplifier dedicated for condenser measurement microphones used in high sensitivity applications, in which amplifier noise is the main factor limiting sensitivity of the measurements. In measurement microphone preamplifiers, the dominant source of noise at lower frequencies is the bias resistance of the input stage. In the presented solution, resistors were connected to the input stage by means of switches. The switches are opened during measurements, which disconnects the resistors from the input stage and results in noise reduction. Closing the switches allows for fast charging of the microphone capacitance. At low frequencies the noise of the designed preamplifier is a few times lower in comparison to similar, commercially available instruments.

  6. Power connect safety and connection interlock

    NASA Technical Reports Server (NTRS)

    Rippel, Wally E. (Inventor)

    1992-01-01

    A power connect safety and connection interlock system is shown for use with inverters and other DC loads (16) which include capacitor filter banks (14) at their DC inputs. A safety circuit (20) operates a spring (26) biased, solenoid (22) driven mechanical connection interference (24) which prevents mating and therefore electrical connection between the power contactor halves (11, 13) of the main power contacts (12) until the capacitor bank is safely precharged through auxiliary contacts (18). When the DC load (16) is shut down, the capacitor bank (14) is automatically discharged through a discharging power resistor (66) by a MOSFET transistor (60) through a discharging power resistor (66) only when both the main power contacts and auxiliary contacts are disconnected.

  7. An investigation during the system test phase of the GOES spacecraft

    NASA Technical Reports Server (NTRS)

    Mallette, L. A.

    1983-01-01

    Spurious RF oscillations were noted during the system test phase of the Geostationary Operational Environmental Satellite (GOES). A space qualified data collection platform report (DCPR) transmitter was subsequently found to have a cracked load resistor in its output isolator. The failure mechanism was caused by heat from the output power of a 20 watt transmitter being reflected into the DCPR transmitter through a sneak path. The reflection from a high VSWR at the rotary joint was not part of the normal operation but was due to unusual circumstances. The reliability of the load resistor under normal operation (low VSWR) over the life of the satellite was determined to be high.

  8. Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

    PubMed

    Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

    2006-02-28

    The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

  9. A Statistical Method to Distinguish Functional Brain Networks

    PubMed Central

    Fujita, André; Vidal, Maciel C.; Takahashi, Daniel Y.

    2017-01-01

    One major problem in neuroscience is the comparison of functional brain networks of different populations, e.g., distinguishing the networks of controls and patients. Traditional algorithms are based on search for isomorphism between networks, assuming that they are deterministic. However, biological networks present randomness that cannot be well modeled by those algorithms. For instance, functional brain networks of distinct subjects of the same population can be different due to individual characteristics. Moreover, networks of subjects from different populations can be generated through the same stochastic process. Thus, a better hypothesis is that networks are generated by random processes. In this case, subjects from the same group are samples from the same random process, whereas subjects from different groups are generated by distinct processes. Using this idea, we developed a statistical test called ANOGVA to test whether two or more populations of graphs are generated by the same random graph model. Our simulations' results demonstrate that we can precisely control the rate of false positives and that the test is powerful to discriminate random graphs generated by different models and parameters. The method also showed to be robust for unbalanced data. As an example, we applied ANOGVA to an fMRI dataset composed of controls and patients diagnosed with autism or Asperger. ANOGVA identified the cerebellar functional sub-network as statistically different between controls and autism (p < 0.001). PMID:28261045

  10. A Statistical Method to Distinguish Functional Brain Networks.

    PubMed

    Fujita, André; Vidal, Maciel C; Takahashi, Daniel Y

    2017-01-01

    One major problem in neuroscience is the comparison of functional brain networks of different populations, e.g., distinguishing the networks of controls and patients. Traditional algorithms are based on search for isomorphism between networks, assuming that they are deterministic. However, biological networks present randomness that cannot be well modeled by those algorithms. For instance, functional brain networks of distinct subjects of the same population can be different due to individual characteristics. Moreover, networks of subjects from different populations can be generated through the same stochastic process. Thus, a better hypothesis is that networks are generated by random processes. In this case, subjects from the same group are samples from the same random process, whereas subjects from different groups are generated by distinct processes. Using this idea, we developed a statistical test called ANOGVA to test whether two or more populations of graphs are generated by the same random graph model. Our simulations' results demonstrate that we can precisely control the rate of false positives and that the test is powerful to discriminate random graphs generated by different models and parameters. The method also showed to be robust for unbalanced data. As an example, we applied ANOGVA to an fMRI dataset composed of controls and patients diagnosed with autism or Asperger. ANOGVA identified the cerebellar functional sub-network as statistically different between controls and autism ( p < 0.001).

  11. Impulsive synchronization of Markovian jumping randomly coupled neural networks with partly unknown transition probabilities via multiple integral approach.

    PubMed

    Chandrasekar, A; Rakkiyappan, R; Cao, Jinde

    2015-10-01

    This paper studies the impulsive synchronization of Markovian jumping randomly coupled neural networks with partly unknown transition probabilities via multiple integral approach. The array of neural networks are coupled in a random fashion which is governed by Bernoulli random variable. The aim of this paper is to obtain the synchronization criteria, which is suitable for both exactly known and partly unknown transition probabilities such that the coupled neural network is synchronized with mixed time-delay. The considered impulsive effects can be synchronized at partly unknown transition probabilities. Besides, a multiple integral approach is also proposed to strengthen the Markovian jumping randomly coupled neural networks with partly unknown transition probabilities. By making use of Kronecker product and some useful integral inequalities, a novel Lyapunov-Krasovskii functional was designed for handling the coupled neural network with mixed delay and then impulsive synchronization criteria are solvable in a set of linear matrix inequalities. Finally, numerical examples are presented to illustrate the effectiveness and advantages of the theoretical results. Copyright © 2015 Elsevier Ltd. All rights reserved.

  12. Return of neonatal CPAP resistance - the Medijet device family examined using in vitro flow simulations.

    PubMed

    Falk, Markus; Donaldsson, Snorri; Jonsson, Baldvin; Drevhammar, Thomas

    2017-11-01

    Medijet nasal continuous positive airway pressure (CPAP) generators are a family of devices developed from the Benveniste valve. Previous studies have shown that the in vitro performance of the Medijet disposable generator was similar to the Neopuff resistor system. We hypothesised that resistance would be the main mechanism of CPAP generation in the Medijet disposable generator. The in vitro performance of the Medijet reusable and disposable systems, the Neopuff resistor system and the Benveniste and Infant Flow nonresistor systems were investigated using static and dynamic bench tests. Large differences in performance were found between the different systems. The disposable Medijet demonstrated high resistance, low pressure stability and high imposed work of breathing. The results also showed that encapsulating the Benveniste valve changed it into a resistor system. The main mechanism of CPAP generation for the disposable Medijet generator was resistance. The Medijet device family showed increasing resistance with each design generation. The high resistance of the Medijet disposable generator could be of great value when examining the clinical importance of pressure stability. Our results suggest that this device should be used cautiously in patients where pressure-stable CPAP is believed to be clinically important. ©2017 Foundation Acta Paediatrica. Published by John Wiley & Sons Ltd.

  13. Improved resistive switching characteristics of a Pt/HfO2/Pt resistor by controlling anode interface with forming and switching polarity

    NASA Astrophysics Data System (ADS)

    Jung, Yong Chan; Seong, Sejong; Lee, Taehoon; Kim, Seon Yong; Park, In-Sung; Ahn, Jinho

    2018-03-01

    The anode interface effects on the resistive switching characteristics of Pt/HfO2/Pt resistors are investigated by changing the forming and switching polarity. Resistive switching properties are evaluated and compared with the polarity operation procedures, such as the reset voltage (Vr), set voltage (Vs), and current levels at low and high resistance states. When the same forming and switching voltage polarity are applied to the resistor, their switching parameters are widely distributed. However, the opposite forming and switching voltage polarity procedures enhance the uniformity of the switching parameters. In particular, the Vs distribution is strongly affected by the voltage polarity variation. A model is proposed based on cone-shaped filament formation through the insulator and the cone diameter at the anode interface to explain the improved resistive switching characteristics under opposite polarity operation. The filament cone is thinner near the anode interface during the forming process; hence, the anode is altered by the application of a switching voltage with opposite polarity to the forming voltage polarity and the converted anode interface becomes the thicker part of the cone. The more uniform and stable switching behavior is attributed to control over the formation and rupture of the cone-shaped filaments at their thicker parts.

  14. Battery tester

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Poljak, M.D.

    1985-08-12

    This abstract discloses an improved battery tester for determining the acceptability of a Lithium Sulfur Dioxide (LiSO/sub 2/) storage battery at a given temperature and with one or more cells therein. The tester is generally made up of a first-comparison circuit having a series of series-interconnected components, namely a comparator, first and second flip-flops, and an AND gate. A first resistor is parallel connected to the first-comparison circuit. A second comparison circuit is also parallel connected to the first-comparison circuit and is generally made up of series-interconnected components, namely a second resistor, a capacitor, a buffer, and a second-comparator. Amore » first switch is connected to the first resistor and a second switch is parallel connected to the second-comparison circuit between the capacitor and the buffer. A logic control arrangement controls the operation of both switches, both comparators, and both flip-flops for testing a battery as to its start-up voltage and performance voltage characteristics all in a relatively short time period. In another embodiment of the tester, it is provided with an analog-to-digital converter, a memory, and a sensor arrangement for enhancing the versatility and reliability of the tester in determining the acceptability of a LiSO/sub 2/ battery.« less

  15. Adjustable electronic load-alarm relay

    DOEpatents

    Mason, Charles H.; Sitton, Roy S.

    1976-01-01

    This invention is an improved electronic alarm relay for monitoring the current drawn by an AC motor or other electrical load. The circuit is designed to measure the load with high accuracy and to have excellent alarm repeatability. Chattering and arcing of the relay contacts are minimal. The operator can adjust the set point easily and can re-set both the high and the low alarm points by means of one simple adjustment. The relay includes means for generating a signal voltage proportional to the motor current. In a preferred form of the invention a first operational amplifier is provided to generate a first constant reference voltage which is higher than a preselected value of the signal voltage. A second operational amplifier is provided to generate a second constant reference voltage which is lower than the aforementioned preselected value of the signal voltage. A circuit comprising a first resistor serially connected to a second resistor is connected across the outputs of the first and second amplifiers, and the junction of the two resistors is connected to the inverting terminal of the second amplifier. Means are provided to compare the aforementioned signal voltage with both the first and second reference voltages and to actuate an alarm if the signal voltage is higher than the first reference voltage or lower than the second reference voltage.

  16. Blackmail propagation on small-world networks

    NASA Astrophysics Data System (ADS)

    Shao, Zhi-Gang; Jian-Ping Sang; Zou, Xian-Wu; Tan, Zhi-Jie; Jin, Zhun-Zhi

    2005-06-01

    The dynamics of the blackmail propagation model based on small-world networks is investigated. It is found that for a given transmitting probability λ the dynamical behavior of blackmail propagation transits from linear growth type to logistical growth one with the network randomness p increases. The transition takes place at the critical network randomness pc=1/N, where N is the total number of nodes in the network. For a given network randomness p the dynamical behavior of blackmail propagation transits from exponential decrease type to logistical growth one with the transmitting probability λ increases. The transition occurs at the critical transmitting probability λc=1/, where is the average number of the nearest neighbors. The present work will be useful for understanding computer virus epidemics and other spreading phenomena on communication and social networks.

  17. Randomizing bipartite networks: the case of the World Trade Web.

    PubMed

    Saracco, Fabio; Di Clemente, Riccardo; Gabrielli, Andrea; Squartini, Tiziano

    2015-06-01

    Within the last fifteen years, network theory has been successfully applied both to natural sciences and to socioeconomic disciplines. In particular, bipartite networks have been recognized to provide a particularly insightful representation of many systems, ranging from mutualistic networks in ecology to trade networks in economy, whence the need of a pattern detection-oriented analysis in order to identify statistically-significant structural properties. Such an analysis rests upon the definition of suitable null models, i.e. upon the choice of the portion of network structure to be preserved while randomizing everything else. However, quite surprisingly, little work has been done so far to define null models for real bipartite networks. The aim of the present work is to fill this gap, extending a recently-proposed method to randomize monopartite networks to bipartite networks. While the proposed formalism is perfectly general, we apply our method to the binary, undirected, bipartite representation of the World Trade Web, comparing the observed values of a number of structural quantities of interest with the expected ones, calculated via our randomization procedure. Interestingly, the behavior of the World Trade Web in this new representation is strongly different from the monopartite analogue, showing highly non-trivial patterns of self-organization.

  18. Precise Heater Controller with rf-Biased Josephson Junctions

    NASA Technical Reports Server (NTRS)

    Green, Colin J.; Sergatskov, Dmitri A.; Duncan, R. V.

    2003-01-01

    Paramagnetic susceptibility thermometers used in fundamental physics experiments are capable of measuring temperature changes with a precision of a part in 2 x 10(exp 10). However, heater controllers are only able to control open-loop power dissipation to about a part in 10(exp 5). We used an array of rf-biased Josephson junctions to precisely control the electrical power dissipation in a heater resistor mounted on a thermally isolated cryogenic platform. Theoretically, this method is capable of controlling the electrical power dissipation to better than a part in 10(exp 12). However, this level has not yet been demonstrated experimentally. The experiment consists of a liquid helium cell that also functions as a high-resolution PdMn thermometer, with a heater resistor mounted on it. The cell is thermally connected to a temperature-controlled cooling stage via a weak thermal link. The heater resistor is electrically connected to the array of Josephson junctions using superconducting wire. An rf-biased array of capacitively shunted Josephson junctions drives the voltage across the heater. The quantized voltage across the resistor is Vn = nf(h/2e), where h is Planck's constant, f is the array biasing frequency, e is the charge of an electron, and n is the integer quantum state of the Josephson array. This results in an electrical power dissipation on the cell of Pn = (Vn)(sup 2/R), where R is the heater resistance. The change of the quantum state of the array changes the power dissipated in the heater, which in turn, results in the change of the cell temperature. This temperature change is compared to the expected values based on the known thermal standoff resistance of the cell from the cooling stage. We will present our initial experimental results and discuss future improvements. This work has been funded by the Fundamental Physics Discipline of the Microgravity Science Office of NASA, and supported by a no-cost equipment loan from Sandia National Laboratories.

  19. Epidemic transmission on random mobile network with diverse infection periods

    NASA Astrophysics Data System (ADS)

    Li, Kezan; Yu, Hong; Zeng, Zhaorong; Ding, Yong; Ma, Zhongjun

    2015-05-01

    The heterogeneity of individual susceptibility and infectivity and time-varying topological structure are two realistic factors when we study epidemics on complex networks. Current research results have shown that the heterogeneity of individual susceptibility and infectivity can increase the epidemic threshold in a random mobile dynamical network with the same infection period. In this paper, we will focus on random mobile dynamical networks with diverse infection periods due to people's different constitutions and external circumstances. Theoretical results indicate that the epidemic threshold of the random mobile network with diverse infection periods is larger than the counterpart with the same infection period. Moreover, the heterogeneity of individual susceptibility and infectivity can play a significant impact on disease transmission. In particular, the homogeneity of individuals will avail to the spreading of epidemics. Numerical examples verify further our theoretical results very well.

  20. Analytical connection between thresholds and immunization strategies of SIS model in random networks

    NASA Astrophysics Data System (ADS)

    Zhou, Ming-Yang; Xiong, Wen-Man; Liao, Hao; Wang, Tong; Wei, Zong-Wen; Fu, Zhong-Qian

    2018-05-01

    Devising effective strategies for hindering the propagation of viruses and protecting the population against epidemics is critical for public security and health. Despite a number of studies based on the susceptible-infected-susceptible (SIS) model devoted to this topic, we still lack a general framework to compare different immunization strategies in completely random networks. Here, we address this problem by suggesting a novel method based on heterogeneous mean-field theory for the SIS model. Our method builds the relationship between the thresholds and different immunization strategies in completely random networks. Besides, we provide an analytical argument that the targeted large-degree strategy achieves the best performance in random networks with arbitrary degree distribution. Moreover, the experimental results demonstrate the effectiveness of the proposed method in both artificial and real-world networks.

  1. Patent citation network in nanotechnology (1976-2004)

    NASA Astrophysics Data System (ADS)

    Li, Xin; Chen, Hsinchun; Huang, Zan; Roco, Mihail C.

    2007-06-01

    The patent citation networks are described using critical node, core network, and network topological analysis. The main objective is understanding of the knowledge transfer processes between technical fields, institutions and countries. This includes identifying key influential players and subfields, the knowledge transfer patterns among them, and the overall knowledge transfer efficiency. The proposed framework is applied to the field of nanoscale science and engineering (NSE), including the citation networks of patent documents, submitting institutions, technology fields, and countries. The NSE patents were identified by keywords "full-text" searching of patents at the United States Patent and Trademark Office (USPTO). The analysis shows that the United States is the most important citation center in NSE research. The institution citation network illustrates a more efficient knowledge transfer between institutions than a random network. The country citation network displays a knowledge transfer capability as efficient as a random network. The technology field citation network and the patent document citation network exhibit a␣less efficient knowledge diffusion capability than a random network. All four citation networks show a tendency to form local citation clusters.

  2. Application of stochastic processes in random growth and evolutionary dynamics

    NASA Astrophysics Data System (ADS)

    Oikonomou, Panagiotis

    We study the effect of power-law distributed randomness on the dynamical behavior of processes such as stochastic growth patterns and evolution. First, we examine the geometrical properties of random shapes produced by a generalized stochastic Loewner Evolution driven by a superposition of a Brownian motion and a stable Levy process. The situation is defined by the usual stochastic Loewner Evolution parameter, kappa, as well as alpha which defines the power-law tail of the stable Levy distribution. We show that the properties of these patterns change qualitatively and singularly at critical values of kappa and alpha. It is reasonable to call such changes "phase transitions". These transitions occur as kappa passes through four and as alpha passes through one. Numerical simulations are used to explore the global scaling behavior of these patterns in each "phase". We show both analytically and numerically that the growth continues indefinitely in the vertical direction for alpha greater than 1, goes as logarithmically with time for alpha equals to 1, and saturates for alpha smaller than 1. The probability density has two different scales corresponding to directions along and perpendicular to the boundary. Scaling functions for the probability density are given for various limiting cases. Second, we study the effect of the architecture of biological networks on their evolutionary dynamics. In recent years, studies of the architecture of large networks have unveiled a common topology, called scale-free, in which a majority of the elements are poorly connected except for a small fraction of highly connected components. We ask how networks with distinct topologies can evolve towards a pre-established target phenotype through a process of random mutations and selection. We use networks of Boolean components as a framework to model a large class of phenotypes. Within this approach, we find that homogeneous random networks and scale-free networks exhibit drastically different evolutionary paths. While homogeneous random networks accumulate neutral mutations and evolve by sparse punctuated steps, scale-free networks evolve rapidly and continuously towards the target phenotype. Moreover, we show that scale-free networks always evolve faster than homogeneous random networks; remarkably, this property does not depend on the precise value of the topological parameter. By contrast, homogeneous random networks require a specific tuning of their topological parameter in order to optimize their fitness. This model suggests that the evolutionary paths of biological networks, punctuated or continuous, may solely be determined by the network topology.

  3. Vulnerability of complex networks

    NASA Astrophysics Data System (ADS)

    Mishkovski, Igor; Biey, Mario; Kocarev, Ljupco

    2011-01-01

    We consider normalized average edge betweenness of a network as a metric of network vulnerability. We suggest that normalized average edge betweenness together with is relative difference when certain number of nodes and/or edges are removed from the network is a measure of network vulnerability, called vulnerability index. Vulnerability index is calculated for four synthetic networks: Erdős-Rényi (ER) random networks, Barabási-Albert (BA) model of scale-free networks, Watts-Strogatz (WS) model of small-world networks, and geometric random networks. Real-world networks for which vulnerability index is calculated include: two human brain networks, three urban networks, one collaboration network, and two power grid networks. We find that WS model of small-world networks and biological networks (human brain networks) are the most robust networks among all networks studied in the paper.

  4. Random walks with long-range steps generated by functions of Laplacian matrices

    NASA Astrophysics Data System (ADS)

    Riascos, A. P.; Michelitsch, T. M.; Collet, B. A.; Nowakowski, A. F.; Nicolleau, F. C. G. A.

    2018-04-01

    In this paper, we explore different Markovian random walk strategies on networks with transition probabilities between nodes defined in terms of functions of the Laplacian matrix. We generalize random walk strategies with local information in the Laplacian matrix, that describes the connections of a network, to a dynamic determined by functions of this matrix. The resulting processes are non-local allowing transitions of the random walker from one node to nodes beyond its nearest neighbors. We find that only two types of Laplacian functions are admissible with distinct behaviors for long-range steps in the infinite network limit: type (i) functions generate Brownian motions, type (ii) functions Lévy flights. For this asymptotic long-range step behavior only the lowest non-vanishing order of the Laplacian function is relevant, namely first order for type (i), and fractional order for type (ii) functions. In the first part, we discuss spectral properties of the Laplacian matrix and a series of relations that are maintained by a particular type of functions that allow to define random walks on any type of undirected connected networks. Once described general properties, we explore characteristics of random walk strategies that emerge from particular cases with functions defined in terms of exponentials, logarithms and powers of the Laplacian as well as relations of these dynamics with non-local strategies like Lévy flights and fractional transport. Finally, we analyze the global capacity of these random walk strategies to explore networks like lattices and trees and different types of random and complex networks.

  5. Distribution of shortest cycle lengths in random networks

    NASA Astrophysics Data System (ADS)

    Bonneau, Haggai; Hassid, Aviv; Biham, Ofer; Kühn, Reimer; Katzav, Eytan

    2017-12-01

    We present analytical results for the distribution of shortest cycle lengths (DSCL) in random networks. The approach is based on the relation between the DSCL and the distribution of shortest path lengths (DSPL). We apply this approach to configuration model networks, for which analytical results for the DSPL were obtained before. We first calculate the fraction of nodes in the network which reside on at least one cycle. Conditioning on being on a cycle, we provide the DSCL over ensembles of configuration model networks with degree distributions which follow a Poisson distribution (Erdős-Rényi network), degenerate distribution (random regular graph), and a power-law distribution (scale-free network). The mean and variance of the DSCL are calculated. The analytical results are found to be in very good agreement with the results of computer simulations.

  6. Listening to the noise: random fluctuations reveal gene network parameters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Munsky, Brian; Khammash, Mustafa

    2009-01-01

    The cellular environment is abuzz with noise. The origin of this noise is attributed to the inherent random motion of reacting molecules that take part in gene expression and post expression interactions. In this noisy environment, clonal populations of cells exhibit cell-to-cell variability that frequently manifests as significant phenotypic differences within the cellular population. The stochastic fluctuations in cellular constituents induced by noise can be measured and their statistics quantified. We show that these random fluctuations carry within them valuable information about the underlying genetic network. Far from being a nuisance, the ever-present cellular noise acts as a rich sourcemore » of excitation that, when processed through a gene network, carries its distinctive fingerprint that encodes a wealth of information about that network. We demonstrate that in some cases the analysis of these random fluctuations enables the full identification of network parameters, including those that may otherwise be difficult to measure. This establishes a potentially powerful approach for the identification of gene networks and offers a new window into the workings of these networks.« less

  7. To cut or not to cut? Assessing the modular structure of brain networks.

    PubMed

    Chang, Yu-Teng; Pantazis, Dimitrios; Leahy, Richard M

    2014-05-01

    A wealth of methods has been developed to identify natural divisions of brain networks into groups or modules, with one of the most prominent being modularity. Compared with the popularity of methods to detect community structure, only a few methods exist to statistically control for spurious modules, relying almost exclusively on resampling techniques. It is well known that even random networks can exhibit high modularity because of incidental concentration of edges, even though they have no underlying organizational structure. Consequently, interpretation of community structure is confounded by the lack of principled and computationally tractable approaches to statistically control for spurious modules. In this paper we show that the modularity of random networks follows a transformed version of the Tracy-Widom distribution, providing for the first time a link between module detection and random matrix theory. We compute parametric formulas for the distribution of modularity for random networks as a function of network size and edge variance, and show that we can efficiently control for false positives in brain and other real-world networks. Copyright © 2014 Elsevier Inc. All rights reserved.

  8. Tactical Network Load Balancing in Multi-Gateway Wireless Sensor Networks

    DTIC Science & Technology

    2013-12-01

    writeup scrsz = get( 0 ,’ScreenSize’); %Creation of the random Sensor Network fig = figure(1); set(fig, ’Position’,[1 scrsz( 4 )*.25 scrsz(3)*.7...thesis writeup scrsz = get( 0 ,’ScreenSize’); %Creation of the random Sensor Network fig = figure(1); set(fig, ’Position’,[1 scrsz( 4 )*.25 scrsz(3)*.7...TYPE AND DATES COVERED Master’s Thesis 4 . TITLE AND SUBTITLE TACTICAL NETWORK LOAD BALANCING IN MULTI-GATEWAY WIRELESS SENSOR NETWORKS 5

  9. A New Random Walk for Replica Detection in WSNs.

    PubMed

    Aalsalem, Mohammed Y; Khan, Wazir Zada; Saad, N M; Hossain, Md Shohrab; Atiquzzaman, Mohammed; Khan, Muhammad Khurram

    2016-01-01

    Wireless Sensor Networks (WSNs) are vulnerable to Node Replication attacks or Clone attacks. Among all the existing clone detection protocols in WSNs, RAWL shows the most promising results by employing Simple Random Walk (SRW). More recently, RAND outperforms RAWL by incorporating Network Division with SRW. Both RAND and RAWL have used SRW for random selection of witness nodes which is problematic because of frequently revisiting the previously passed nodes that leads to longer delays, high expenditures of energy with lower probability that witness nodes intersect. To circumvent this problem, we propose to employ a new kind of constrained random walk, namely Single Stage Memory Random Walk and present a distributed technique called SSRWND (Single Stage Memory Random Walk with Network Division). In SSRWND, single stage memory random walk is combined with network division aiming to decrease the communication and memory costs while keeping the detection probability higher. Through intensive simulations it is verified that SSRWND guarantees higher witness node security with moderate communication and memory overheads. SSRWND is expedient for security oriented application fields of WSNs like military and medical.

  10. A New Random Walk for Replica Detection in WSNs

    PubMed Central

    Aalsalem, Mohammed Y.; Saad, N. M.; Hossain, Md. Shohrab; Atiquzzaman, Mohammed; Khan, Muhammad Khurram

    2016-01-01

    Wireless Sensor Networks (WSNs) are vulnerable to Node Replication attacks or Clone attacks. Among all the existing clone detection protocols in WSNs, RAWL shows the most promising results by employing Simple Random Walk (SRW). More recently, RAND outperforms RAWL by incorporating Network Division with SRW. Both RAND and RAWL have used SRW for random selection of witness nodes which is problematic because of frequently revisiting the previously passed nodes that leads to longer delays, high expenditures of energy with lower probability that witness nodes intersect. To circumvent this problem, we propose to employ a new kind of constrained random walk, namely Single Stage Memory Random Walk and present a distributed technique called SSRWND (Single Stage Memory Random Walk with Network Division). In SSRWND, single stage memory random walk is combined with network division aiming to decrease the communication and memory costs while keeping the detection probability higher. Through intensive simulations it is verified that SSRWND guarantees higher witness node security with moderate communication and memory overheads. SSRWND is expedient for security oriented application fields of WSNs like military and medical. PMID:27409082

  11. Mechanism for and method of biasing magnetic sensor

    DOEpatents

    Kautz, David R.

    2007-12-04

    A magnetic sensor package having a biasing mechanism involving a coil-generated, resistor-controlled magnetic field for providing a desired biasing effect. In a preferred illustrated embodiment, the package broadly comprises a substrate; a magnetic sensor element; a biasing mechanism, including a coil and a first resistance element; an amplification mechanism; a filter capacitor element; and an encapsulant. The sensor is positioned within the coil. A current applied to the coil produces a biasing magnetic field. The biasing magnetic field is controlled by selecting a resistance value for the first resistance element which achieves the desired biasing effect. The first resistance element preferably includes a plurality of selectable resistors, the selection of one or more of which sets the resistance value.

  12. Precision digital pulse phase generator

    DOEpatents

    McEwan, T.E.

    1996-10-08

    A timing generator comprises a crystal oscillator connected to provide an output reference pulse. A resistor-capacitor combination is connected to provide a variable-delay output pulse from an input connected to the crystal oscillator. A phase monitor is connected to provide duty-cycle representations of the reference and variable-delay output pulse phase. An operational amplifier drives a control voltage to the resistor-capacitor combination according to currents integrated from the phase monitor and injected into summing junctions. A digital-to-analog converter injects a control current into the summing junctions according to an input digital control code. A servo equilibrium results that provides a phase delay of the variable-delay output pulse to the output reference pulse that linearly depends on the input digital control code. 2 figs.

  13. Precision digital pulse phase generator

    DOEpatents

    McEwan, Thomas E.

    1996-01-01

    A timing generator comprises a crystal oscillator connected to provide an output reference pulse. A resistor-capacitor combination is connected to provide a variable-delay output pulse from an input connected to the crystal oscillator. A phase monitor is connected to provide duty-cycle representations of the reference and variable-delay output pulse phase. An operational amplifier drives a control voltage to the resistor-capacitor combination according to currents integrated from the phase monitor and injected into summing junctions. A digital-to-analog converter injects a control current into the summing junctions according to an input digital control code. A servo equilibrium results that provides a phase delay of the variable-delay output pulse to the output reference pulse that linearly depends on the input digital control code.

  14. Spiral microstrip antenna with resistance

    NASA Technical Reports Server (NTRS)

    Shively, David G. (Inventor)

    1994-01-01

    The present invention relates to microstrip antennas, and more particularly to wide bandwidth spiral antennas with resistive loading. A spiral microstrip antenna having resistor element embedded in each of the spiral arms is provided. The antenna is constructed using a conductive back plane as a base. The back plane supports a dielectric slab having a thickness between one-sixteenth and one-quarter of an inch. A square spiral, having either two or four arms, is attached to the dielectric slab. Each arm of the spiral has resistor elements thereby dissipating an excess energy not already emitted through radiation. The entire configuration provides a thin, flat, high gain, wide bandwidth antenna which requires no underlying cavity. The configuration allows the antenna to be mounted conformably on an aircraft surface.

  15. Tracking heat flux sensors for concentrating solar applications

    DOEpatents

    Andraka, Charles E; Diver, Jr., Richard B

    2013-06-11

    Innovative tracking heat flux sensors located at or near the solar collector's focus for centering the concentrated image on a receiver assembly. With flux sensors mounted near a receiver's aperture, the flux gradient near the focus of a dish or trough collector can be used to precisely position the focused solar flux on the receiver. The heat flux sensors comprise two closely-coupled thermocouple junctions with opposing electrical polarity that are separated by a thermal resistor. This arrangement creates an electrical signal proportional to heat flux intensity, and largely independent of temperature. The sensors are thermally grounded to allow a temperature difference to develop across the thermal resistor, and are cooled by a heat sink to maintain an acceptable operating temperature.

  16. Pyroelectric detector arrays

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.; Robertson, J. B.; Breckenridge, R. A. (Inventor)

    1982-01-01

    A pryoelectric detector array and the method for making it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strip. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of the layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

  17. Pyroelectric detector arrays

    NASA Technical Reports Server (NTRS)

    Fripp, A. L.; Robertson, J. B.; Breckenridge, R. (Inventor)

    1982-01-01

    A pyroelectric detector array and the method for using it are described. A series of holes formed through a silicon dioxide layer on the surface of a silicon substrate forms the mounting fixture for the pyroelectric detector array. A series of nontouching strips of indium are formed around the holes to make contact with the backside electrodes and form the output terminals for individual detectors. A pyroelectric detector strip with front and back electrodes, respectively, is mounted over the strips. Biasing resistors are formed on the surface of the silicon dioxide layer and connected to the strips. A metallized pad formed on the surface of layer is connected to each of the biasing resistors and to the film to provide the ground for the pyroelectric detector array.

  18. A new OLED SPICE model for pixel circuit simulation in OLED-on-silicon microdisplay design

    NASA Astrophysics Data System (ADS)

    Bohua, Zhao; Ran, Huang; Jianhui, Bu; Yinxue, Lü; Yiqi, Wang; Fei, Ma; Guohua, Xie; Zhensong, Zhang; Huan, Du; Jiajun, Luo; Zhengsheng, Han; Yi, Zhao

    2012-07-01

    A new equivalent circuit model of organic-light-emitting-diode (OLED) is proposed. As the single-diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I—V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.

  19. Network problem threshold

    NASA Technical Reports Server (NTRS)

    Gejji, Raghvendra, R.

    1992-01-01

    Network transmission errors such as collisions, CRC errors, misalignment, etc. are statistical in nature. Although errors can vary randomly, a high level of errors does indicate specific network problems, e.g. equipment failure. In this project, we have studied the random nature of collisions theoretically as well as by gathering statistics, and established a numerical threshold above which a network problem is indicated with high probability.

  20. A Simulation Study Comparing Epidemic Dynamics on Exponential Random Graph and Edge-Triangle Configuration Type Contact Network Models

    PubMed Central

    Rolls, David A.; Wang, Peng; McBryde, Emma; Pattison, Philippa; Robins, Garry

    2015-01-01

    We compare two broad types of empirically grounded random network models in terms of their abilities to capture both network features and simulated Susceptible-Infected-Recovered (SIR) epidemic dynamics. The types of network models are exponential random graph models (ERGMs) and extensions of the configuration model. We use three kinds of empirical contact networks, chosen to provide both variety and realistic patterns of human contact: a highly clustered network, a bipartite network and a snowball sampled network of a “hidden population”. In the case of the snowball sampled network we present a novel method for fitting an edge-triangle model. In our results, ERGMs consistently capture clustering as well or better than configuration-type models, but the latter models better capture the node degree distribution. Despite the additional computational requirements to fit ERGMs to empirical networks, the use of ERGMs provides only a slight improvement in the ability of the models to recreate epidemic features of the empirical network in simulated SIR epidemics. Generally, SIR epidemic results from using configuration-type models fall between those from a random network model (i.e., an Erdős-Rényi model) and an ERGM. The addition of subgraphs of size four to edge-triangle type models does improve agreement with the empirical network for smaller densities in clustered networks. Additional subgraphs do not make a noticeable difference in our example, although we would expect the ability to model cliques to be helpful for contact networks exhibiting household structure. PMID:26555701

  1. Self-avoiding walks on scale-free networks

    NASA Astrophysics Data System (ADS)

    Herrero, Carlos P.

    2005-01-01

    Several kinds of walks on complex networks are currently used to analyze search and navigation in different systems. Many analytical and computational results are known for random walks on such networks. Self-avoiding walks (SAW’s) are expected to be more suitable than unrestricted random walks to explore various kinds of real-life networks. Here we study long-range properties of random SAW’s on scale-free networks, characterized by a degree distribution P (k) ˜ k-γ . In the limit of large networks (system size N→∞ ), the average number sn of SAW’s starting from a generic site increases as μn , with μ= < k2 > / -1 . For finite N , sn is reduced due to the presence of loops in the network, which causes the emergence of attrition of the paths. For kinetic growth walks, the average maximum length increases as a power of the system size: ˜ Nα , with an exponent α increasing as the parameter γ is raised. We discuss the dependence of α on the minimum allowed degree in the network. A similar power-law dependence is found for the mean self-intersection length of nonreversal random walks. Simulation results support our approximate analytical calculations.

  2. Impact of degree heterogeneity on the behavior of trapping in Koch networks

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongzhi; Gao, Shuyang; Xie, Wenlei

    2010-12-01

    Previous work shows that the mean first-passage time (MFPT) for random walks to a given hub node (node with maximum degree) in uncorrelated random scale-free networks is closely related to the exponent γ of power-law degree distribution P(k )˜k-γ, which describes the extent of heterogeneity of scale-free network structure. However, extensive empirical research indicates that real networked systems also display ubiquitous degree correlations. In this paper, we address the trapping issue on the Koch networks, which is a special random walk with one trap fixed at a hub node. The Koch networks are power-law with the characteristic exponent γ in the range between 2 and 3, they are either assortative or disassortative. We calculate exactly the MFPT that is the average of first-passage time from all other nodes to the trap. The obtained explicit solution shows that in large networks the MFPT varies lineally with node number N, which is obviously independent of γ and is sharp contrast to the scaling behavior of MFPT observed for uncorrelated random scale-free networks, where γ influences qualitatively the MFPT of trapping problem.

  3. Selective randomized load balancing and mesh networks with changing demands

    NASA Astrophysics Data System (ADS)

    Shepherd, F. B.; Winzer, P. J.

    2006-05-01

    We consider the problem of building cost-effective networks that are robust to dynamic changes in demand patterns. We compare several architectures using demand-oblivious routing strategies. Traditional approaches include single-hop architectures based on a (static or dynamic) circuit-switched core infrastructure and multihop (packet-switched) architectures based on point-to-point circuits in the core. To address demand uncertainty, we seek minimum cost networks that can carry the class of hose demand matrices. Apart from shortest-path routing, Valiant's randomized load balancing (RLB), and virtual private network (VPN) tree routing, we propose a third, highly attractive approach: selective randomized load balancing (SRLB). This is a blend of dual-hop hub routing and randomized load balancing that combines the advantages of both architectures in terms of network cost, delay, and delay jitter. In particular, we give empirical analyses for the cost (in terms of transport and switching equipment) for the discussed architectures, based on three representative carrier networks. Of these three networks, SRLB maintains the resilience properties of RLB while achieving significant cost reduction over all other architectures, including RLB and multihop Internet protocol/multiprotocol label switching (IP/MPLS) networks using VPN-tree routing.

  4. Global mean first-passage times of random walks on complex networks.

    PubMed

    Tejedor, V; Bénichou, O; Voituriez, R

    2009-12-01

    We present a general framework, applicable to a broad class of random walks on complex networks, which provides a rigorous lower bound for the mean first-passage time of a random walker to a target site averaged over its starting position, the so-called global mean first-passage time (GMFPT). This bound is simply expressed in terms of the equilibrium distribution at the target and implies a minimal scaling of the GMFPT with the network size. We show that this minimal scaling, which can be arbitrarily slow, is realized under the simple condition that the random walk is transient at the target site and independently of the small-world, scale-free, or fractal properties of the network. Last, we put forward that the GMFPT to a specific target is not a representative property of the network since the target averaged GMFPT satisfies much more restrictive bounds.

  5. A scaling law for random walks on networks

    PubMed Central

    Perkins, Theodore J.; Foxall, Eric; Glass, Leon; Edwards, Roderick

    2014-01-01

    The dynamics of many natural and artificial systems are well described as random walks on a network: the stochastic behaviour of molecules, traffic patterns on the internet, fluctuations in stock prices and so on. The vast literature on random walks provides many tools for computing properties such as steady-state probabilities or expected hitting times. Previously, however, there has been no general theory describing the distribution of possible paths followed by a random walk. Here, we show that for any random walk on a finite network, there are precisely three mutually exclusive possibilities for the form of the path distribution: finite, stretched exponential and power law. The form of the distribution depends only on the structure of the network, while the stepping probabilities control the parameters of the distribution. We use our theory to explain path distributions in domains such as sports, music, nonlinear dynamics and stochastic chemical kinetics. PMID:25311870

  6. A scaling law for random walks on networks

    NASA Astrophysics Data System (ADS)

    Perkins, Theodore J.; Foxall, Eric; Glass, Leon; Edwards, Roderick

    2014-10-01

    The dynamics of many natural and artificial systems are well described as random walks on a network: the stochastic behaviour of molecules, traffic patterns on the internet, fluctuations in stock prices and so on. The vast literature on random walks provides many tools for computing properties such as steady-state probabilities or expected hitting times. Previously, however, there has been no general theory describing the distribution of possible paths followed by a random walk. Here, we show that for any random walk on a finite network, there are precisely three mutually exclusive possibilities for the form of the path distribution: finite, stretched exponential and power law. The form of the distribution depends only on the structure of the network, while the stepping probabilities control the parameters of the distribution. We use our theory to explain path distributions in domains such as sports, music, nonlinear dynamics and stochastic chemical kinetics.

  7. A scaling law for random walks on networks.

    PubMed

    Perkins, Theodore J; Foxall, Eric; Glass, Leon; Edwards, Roderick

    2014-10-14

    The dynamics of many natural and artificial systems are well described as random walks on a network: the stochastic behaviour of molecules, traffic patterns on the internet, fluctuations in stock prices and so on. The vast literature on random walks provides many tools for computing properties such as steady-state probabilities or expected hitting times. Previously, however, there has been no general theory describing the distribution of possible paths followed by a random walk. Here, we show that for any random walk on a finite network, there are precisely three mutually exclusive possibilities for the form of the path distribution: finite, stretched exponential and power law. The form of the distribution depends only on the structure of the network, while the stepping probabilities control the parameters of the distribution. We use our theory to explain path distributions in domains such as sports, music, nonlinear dynamics and stochastic chemical kinetics.

  8. Maximum Power Game as a Physical and Social Extension of Classical Games

    NASA Astrophysics Data System (ADS)

    Kim, Pilwon

    2017-03-01

    We consider an electric circuit in which the players participate as resistors and adjust their resistance in pursuit of individual maximum power. The maximum power game(MPG) becomes very complicated in a circuit which is indecomposable into serial/parallel components, yielding a nontrivial power distribution at equilibrium. Depending on the circuit topology, MPG covers a wide range of phenomena: from a social dilemma in which the whole group loses to a well-coordinated situation in which the individual pursuit of power promotes the collective outcomes. We also investigate a situation where each player in the circuit has an intrinsic heat waste. Interestingly, it is this individual inefficiency which can keep them from the collective failure in power generation. When coping with an efficient opponent with small intrinsic resistance, a rather inefficient player gets more power than efficient one. A circuit with multiple voltage inputs forms the network-based maximum power game. One of our major interests is to figure out, in what kind of the networks the pursuit for private power leads to greater total power. It turns out that the circuits with the scale-free structure is one of the good candidates which generates as much power as close to the possible maximum total.

  9. Memristor-based cellular nonlinear/neural network: design, analysis, and applications.

    PubMed

    Duan, Shukai; Hu, Xiaofang; Dong, Zhekang; Wang, Lidan; Mazumder, Pinaki

    2015-06-01

    Cellular nonlinear/neural network (CNN) has been recognized as a powerful massively parallel architecture capable of solving complex engineering problems by performing trillions of analog operations per second. The memristor was theoretically predicted in the late seventies, but it garnered nascent research interest due to the recent much-acclaimed discovery of nanocrossbar memories by engineers at the Hewlett-Packard Laboratory. The memristor is expected to be co-integrated with nanoscale CMOS technology to revolutionize conventional von Neumann as well as neuromorphic computing. In this paper, a compact CNN model based on memristors is presented along with its performance analysis and applications. In the new CNN design, the memristor bridge circuit acts as the synaptic circuit element and substitutes the complex multiplication circuit used in traditional CNN architectures. In addition, the negative differential resistance and nonlinear current-voltage characteristics of the memristor have been leveraged to replace the linear resistor in conventional CNNs. The proposed CNN design has several merits, for example, high density, nonvolatility, and programmability of synaptic weights. The proposed memristor-based CNN design operations for implementing several image processing functions are illustrated through simulation and contrasted with conventional CNNs. Monte-Carlo simulation has been used to demonstrate the behavior of the proposed CNN due to the variations in memristor synaptic weights.

  10. Small-World Network Spectra in Mean-Field Theory

    NASA Astrophysics Data System (ADS)

    Grabow, Carsten; Grosskinsky, Stefan; Timme, Marc

    2012-05-01

    Collective dynamics on small-world networks emerge in a broad range of systems with their spectra characterizing fundamental asymptotic features. Here we derive analytic mean-field predictions for the spectra of small-world models that systematically interpolate between regular and random topologies by varying their randomness. These theoretical predictions agree well with the actual spectra (obtained by numerical diagonalization) for undirected and directed networks and from fully regular to strongly random topologies. These results may provide analytical insights to empirically found features of dynamics on small-world networks from various research fields, including biology, physics, engineering, and social science.

  11. How Fast Can Networks Synchronize? A Random Matrix Theory Approach

    NASA Astrophysics Data System (ADS)

    Timme, Marc; Wolf, Fred; Geisel, Theo

    2004-03-01

    Pulse-coupled oscillators constitute a paradigmatic class of dynamical systems interacting on networks because they model a variety of biological systems including flashing fireflies and chirping crickets as well as pacemaker cells of the heart and neural networks. Synchronization is one of the most simple and most prevailing kinds of collective dynamics on such networks. Here we study collective synchronization [1] of pulse-coupled oscillators interacting on asymmetric random networks. Using random matrix theory we analytically determine the speed of synchronization in such networks in dependence on the dynamical and network parameters [2]. The speed of synchronization increases with increasing coupling strengths. Surprisingly, however, it stays finite even for infinitely strong interactions. The results indicate that the speed of synchronization is limited by the connectivity of the network. We discuss the relevance of our findings to general equilibration processes on complex networks. [5mm] [1] M. Timme, F. Wolf, T. Geisel, Phys. Rev. Lett. 89:258701 (2002). [2] M. Timme, F. Wolf, T. Geisel, cond-mat/0306512 (2003).

  12. Perturbation propagation in random and evolved Boolean networks

    NASA Astrophysics Data System (ADS)

    Fretter, Christoph; Szejka, Agnes; Drossel, Barbara

    2009-03-01

    In this paper, we investigate the propagation of perturbations in Boolean networks by evaluating the Derrida plot and its modifications. We show that even small random Boolean networks agree well with the predictions of the annealed approximation, but nonrandom networks show a very different behaviour. We focus on networks that were evolved for high dynamical robustness. The most important conclusion is that the simple distinction between frozen, critical and chaotic networks is no longer useful, since such evolved networks can display the properties of all three types of networks. Furthermore, we evaluate a simplified empirical network and show how its specific state space properties are reflected in the modified Derrida plots.

  13. Spread of information and infection on finite random networks

    NASA Astrophysics Data System (ADS)

    Isham, Valerie; Kaczmarska, Joanna; Nekovee, Maziar

    2011-04-01

    The modeling of epidemic-like processes on random networks has received considerable attention in recent years. While these processes are inherently stochastic, most previous work has been focused on deterministic models that ignore important fluctuations that may persist even in the infinite network size limit. In a previous paper, for a class of epidemic and rumor processes, we derived approximate models for the full probability distribution of the final size of the epidemic, as opposed to only mean values. In this paper we examine via direct simulations the adequacy of the approximate model to describe stochastic epidemics and rumors on several random network topologies: homogeneous networks, Erdös-Rényi (ER) random graphs, Barabasi-Albert scale-free networks, and random geometric graphs. We find that the approximate model is reasonably accurate in predicting the probability of spread. However, the position of the threshold and the conditional mean of the final size for processes near the threshold are not well described by the approximate model even in the case of homogeneous networks. We attribute this failure to the presence of other structural properties beyond degree-degree correlations, and in particular clustering, which are present in any finite network but are not incorporated in the approximate model. In order to test this “hypothesis” we perform additional simulations on a set of ER random graphs where degree-degree correlations and clustering are separately and independently introduced using recently proposed algorithms from the literature. Our results show that even strong degree-degree correlations have only weak effects on the position of the threshold and the conditional mean of the final size. On the other hand, the introduction of clustering greatly affects both the position of the threshold and the conditional mean. Similar analysis for the Barabasi-Albert scale-free network confirms the significance of clustering on the dynamics of rumor spread. For this network, though, with its highly skewed degree distribution, the addition of positive correlation had a much stronger effect on the final size distribution than was found for the simple random graph.

  14. Parameters affecting the resilience of scale-free networks to random failures.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Link, Hamilton E.; LaViolette, Randall A.; Lane, Terran

    2005-09-01

    It is commonly believed that scale-free networks are robust to massive numbers of random node deletions. For example, Cohen et al. in (1) study scale-free networks including some which approximate the measured degree distribution of the Internet. Their results suggest that if each node in this network failed independently with probability 0.99, most of the remaining nodes would still be connected in a giant component. In this paper, we show that a large and important subclass of scale-free networks are not robust to massive numbers of random node deletions. In particular, we study scale-free networks which have minimum node degreemore » of 1 and a power-law degree distribution beginning with nodes of degree 1 (power-law networks). We show that, in a power-law network approximating the Internet's reported distribution, when the probability of deletion of each node is 0.5 only about 25% of the surviving nodes in the network remain connected in a giant component, and the giant component does not persist beyond a critical failure rate of 0.9. The new result is partially due to improved analytical accommodation of the large number of degree-0 nodes that result after node deletions. Our results apply to power-law networks with a wide range of power-law exponents, including Internet-like networks. We give both analytical and empirical evidence that such networks are not generally robust to massive random node deletions.« less

  15. Spreading in online social networks: the role of social reinforcement.

    PubMed

    Zheng, Muhua; Lü, Linyuan; Zhao, Ming

    2013-07-01

    Some epidemic spreading models are usually applied to analyze the propagation of opinions or news. However, the dynamics of epidemic spreading and information or behavior spreading are essentially different in many aspects. Centola's experiments [Science 329, 1194 (2010)] on behavior spreading in online social networks showed that the spreading is faster and broader in regular networks than in random networks. This result contradicts with the former understanding that random networks are preferable for spreading than regular networks. To describe the spreading in online social networks, a unknown-known-approved-exhausted four-status model was proposed, which emphasizes the effect of social reinforcement and assumes that the redundant signals can improve the probability of approval (i.e., the spreading rate). Performing the model on regular and random networks, it is found that our model can well explain the results of Centola's experiments on behavior spreading and some former studies on information spreading in different parameter space. The effects of average degree and network size on behavior spreading process are further analyzed. The results again show the importance of social reinforcement and are accordant with Centola's anticipation that increasing the network size or decreasing the average degree will enlarge the difference of the density of final approved nodes between regular and random networks. Our work complements the former studies on spreading dynamics, especially the spreading in online social networks where the information usually requires individuals' confirmations before being transmitted to others.

  16. Routing in Networks with Random Topologies

    NASA Technical Reports Server (NTRS)

    Bambos, Nicholas

    1997-01-01

    We examine the problems of routing and server assignment in networks with random connectivities. In such a network the basic topology is fixed, but during each time slot and for each of tis input queues, each server (node) is either connected to or disconnected from each of its queues with some probability.

  17. Gossip and Distributed Kalman Filtering: Weak Consensus Under Weak Detectability

    NASA Astrophysics Data System (ADS)

    Kar, Soummya; Moura, José M. F.

    2011-04-01

    The paper presents the gossip interactive Kalman filter (GIKF) for distributed Kalman filtering for networked systems and sensor networks, where inter-sensor communication and observations occur at the same time-scale. The communication among sensors is random; each sensor occasionally exchanges its filtering state information with a neighbor depending on the availability of the appropriate network link. We show that under a weak distributed detectability condition: 1. the GIKF error process remains stochastically bounded, irrespective of the instability properties of the random process dynamics; and 2. the network achieves \\emph{weak consensus}, i.e., the conditional estimation error covariance at a (uniformly) randomly selected sensor converges in distribution to a unique invariant measure on the space of positive semi-definite matrices (independent of the initial state.) To prove these results, we interpret the filtered states (estimates and error covariances) at each node in the GIKF as stochastic particles with local interactions. We analyze the asymptotic properties of the error process by studying as a random dynamical system the associated switched (random) Riccati equation, the switching being dictated by a non-stationary Markov chain on the network graph.

  18. Discrete-time systems with random switches: From systems stability to networks synchronization.

    PubMed

    Guo, Yao; Lin, Wei; Ho, Daniel W C

    2016-03-01

    In this article, we develop some approaches, which enable us to more accurately and analytically identify the essential patterns that guarantee the almost sure stability of discrete-time systems with random switches. We allow for the case that the elements in the switching connection matrix even obey some unbounded and continuous-valued distributions. In addition to the almost sure stability, we further investigate the almost sure synchronization in complex dynamical networks consisting of randomly connected nodes. Numerical examples illustrate that a chaotic dynamics in the synchronization manifold is preserved when statistical parameters enter some almost sure synchronization region established by the developed approach. Moreover, some delicate configurations are considered on probability space for ensuring synchronization in networks whose nodes are described by nonlinear maps. Both theoretical and numerical results on synchronization are presented by setting only a few random connections in each switch duration. More interestingly, we analytically find it possible to achieve almost sure synchronization in the randomly switching complex networks even with very large population sizes, which cannot be easily realized in non-switching but deterministically connected networks.

  19. Discrete-time systems with random switches: From systems stability to networks synchronization

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Guo, Yao; Lin, Wei, E-mail: wlin@fudan.edu.cn; Shanghai Key Laboratory of Contemporary Applied Mathematics, LMNS, and Shanghai Center for Mathematical Sciences, Shanghai 200433

    2016-03-15

    In this article, we develop some approaches, which enable us to more accurately and analytically identify the essential patterns that guarantee the almost sure stability of discrete-time systems with random switches. We allow for the case that the elements in the switching connection matrix even obey some unbounded and continuous-valued distributions. In addition to the almost sure stability, we further investigate the almost sure synchronization in complex dynamical networks consisting of randomly connected nodes. Numerical examples illustrate that a chaotic dynamics in the synchronization manifold is preserved when statistical parameters enter some almost sure synchronization region established by the developedmore » approach. Moreover, some delicate configurations are considered on probability space for ensuring synchronization in networks whose nodes are described by nonlinear maps. Both theoretical and numerical results on synchronization are presented by setting only a few random connections in each switch duration. More interestingly, we analytically find it possible to achieve almost sure synchronization in the randomly switching complex networks even with very large population sizes, which cannot be easily realized in non-switching but deterministically connected networks.« less

  20. Weighted Scaling in Non-growth Random Networks

    NASA Astrophysics Data System (ADS)

    Chen, Guang; Yang, Xu-Hua; Xu, Xin-Li

    2012-09-01

    We propose a weighted model to explain the self-organizing formation of scale-free phenomenon in non-growth random networks. In this model, we use multiple-edges to represent the connections between vertices and define the weight of a multiple-edge as the total weights of all single-edges within it and the strength of a vertex as the sum of weights for those multiple-edges attached to it. The network evolves according to a vertex strength preferential selection mechanism. During the evolution process, the network always holds its total number of vertices and its total number of single-edges constantly. We show analytically and numerically that a network will form steady scale-free distributions with our model. The results show that a weighted non-growth random network can evolve into scale-free state. It is interesting that the network also obtains the character of an exponential edge weight distribution. Namely, coexistence of scale-free distribution and exponential distribution emerges.

  1. Symmetries and synchronization in multilayer random networks

    NASA Astrophysics Data System (ADS)

    Saa, Alberto

    2018-04-01

    In the light of the recently proposed scenario of asymmetry-induced synchronization (AISync), in which dynamical uniformity and consensus in a distributed system would demand certain asymmetries in the underlying network, we investigate here the influence of some regularities in the interlayer connection patterns on the synchronization properties of multilayer random networks. More specifically, by considering a Stuart-Landau model of complex oscillators with random frequencies, we report for multilayer networks a dynamical behavior that could be also classified as a manifestation of AISync. We show, namely, that the presence of certain symmetries in the interlayer connection pattern tends to diminish the synchronization capability of the whole network or, in other words, asymmetries in the interlayer connections would enhance synchronization in such structured networks. Our results might help the understanding not only of the AISync mechanism itself but also its possible role in the determination of the interlayer connection pattern of multilayer and other structured networks with optimal synchronization properties.

  2. Sensitivity and network topology in chemical reaction systems

    NASA Astrophysics Data System (ADS)

    Okada, Takashi; Mochizuki, Atsushi

    2017-08-01

    In living cells, biochemical reactions are catalyzed by specific enzymes and connect to one another by sharing substrates and products, forming complex networks. In our previous studies, we established a framework determining the responses to enzyme perturbations only from network topology, and then proved a theorem, called the law of localization, explaining response patterns in terms of network topology. In this paper, we generalize these results to reaction networks with conserved concentrations, which allows us to study any reaction system. We also propose network characteristics quantifying robustness. We compare E. coli metabolic network with randomly rewired networks, and find that the robustness of the E. coli network is significantly higher than that of the random networks.

  3. Conductivity of Nanowire Arrays under Random and Ordered Orientation Configurations

    PubMed Central

    Jagota, Milind; Tansu, Nelson

    2015-01-01

    A computational model was developed to analyze electrical conductivity of random metal nanowire networks. It was demonstrated for the first time through use of this model that a performance gain in random metal nanowire networks can be achieved by slightly restricting nanowire orientation. It was furthermore shown that heavily ordered configurations do not outperform configurations with some degree of randomness; randomness in the case of metal nanowire orientations acts to increase conductivity. PMID:25976936

  4. MAP Propulsion System Thermal Design

    NASA Technical Reports Server (NTRS)

    Mosier, Carol L.

    2003-01-01

    The propulsion system of the Microwave Anisotropy Probe (MAP) had stringent requirements that made the thermal design unique. To meet instrument stability requirements the system had to be designed to keep temperatures of all components within acceptable limits without heater cycling. Although the spacecraft remains at a fixed 22 sun angle at L2, the variations in solar constant, property degradation, and bus voltage range all significantly affect the temperature. Large portions of the fuel lines are external to the structure and all components are mounted to non-conductive composite structure. These two facts made the sensitivity to the MLI effective emissivity and bus temperature very high. Approximately two years prior to launch the propulsion system was redesigned to meet MAP requirements. The new design utilized hardware that was already installed in order to meet schedule constraints. The spacecraft design and the thermal requirements were changed to compensate for inadequacies of the existing hardware. The propulsion system consists of fuel lines, fill and drain lines/valve, eight thrusters, a HXCM, and a propulsion tank. A voltage regulator was added to keep critical components within limits. Software was developed to control the operational heaters. Trim resistors were put in series with each operational heater circuits and the tank survival heater. A highly sophisticated test program, which included real time model correlation, was developed to determine trim resistors sizes. These trim resistors were installed during a chamber break and verified during thermal balance testing.

  5. An optimized resistor pattern for temperature gradient control in microfluidics

    NASA Astrophysics Data System (ADS)

    Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

    2009-06-01

    In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117-23, Erickson et al 2003 Lab Chip 3 141-9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors.

  6. Development of an enrofloxacin immunosensor based on label-free electrochemical impedance spectroscopy.

    PubMed

    Wu, Ching-Chou; Lin, Chia-Hung; Wang, Way-Shyan

    2009-06-30

    Enrofloxacin is the most widespread antibiotic in the fluoroquinolone family. As such, the development of a rapid and sensitive method for the determination of trace amounts of enrofloxacin is an important issue in the health field. The interaction of the enrofloxacin antigen to a specific antibody (Ab) immobilized on an 11-mercapto-undecanoic acid-coated gold electrode was quantified by electrochemical impedance spectroscopy. Two equivalent circuits were separately used to interpret the obtained impedance spectra. These circuits included one resistor in series with one parallel circuit comprised of a resistor and a capacitor (1R//C), and one resistor in series with two parallel RC circuits (2R//C). The results indicate that the antigen-antibody reaction analyzed using the 1R//C circuit provided a more sensitive resistance increment against the enrofloxacin concentration than that of the 2R//C circuit. However, the 2R//C circuit provided a better fitting for impedance spectra, and therefore supplies more detailed results of the enrofloxacin-antibody interaction, causing the increase of electron transfer resistance selectively to the modified layer, and not the electrical double layer. The antibody-modified electrode allowed for analysis of the dynamic linear range of 1-1000 ng/ml enrofloxacin with a detection limit of 1 ng/ml. The reagentless and label-free impedimetric immunosensors provide a simple and sensitive detection method for the specific determination of enrofloxacin.

  7. Pathophysiology of increased cerebrospinal fluid pressure associated to brain arteriovenous malformations: The hydraulic hypothesis.

    PubMed

    Rossitti, Sandro

    2013-01-01

    Brain arteriovenous malformations (AVMs) produce circulatory and functional disturbances in adjacent as well as in remote areas of the brain, but their physiological effect on the cerebrospinal fluid (CSF) pressure is not well known. The hypothesis of an intrinsic disease mechanism leading to increased CSF pressure in all patients with brain AVM is outlined, based on a theory of hemodynamic control of intracranial pressure that asserts that CSF pressure is a fraction of the systemic arterial pressure as predicted by a two-resistor series circuit hydraulic model. The resistors are the arteriolar resistance (that is regulated by vasomotor tonus), and the venous resistance (which is mechanically passive as a Starling resistor). This theory is discussed and compared with the knowledge accumulated by now on intravasal pressures and CSF pressure measured in patients with brain AVM. The theory provides a basis for understanding the occurrence of pseudotumor cerebri syndrome in patients with nonhemorrhagic brain AVMs, for the occurrence of local mass effect and brain edema bordering unruptured AVMs, and for the development of hydrocephalus in patients with unruptured AVMs. The theory also contributes to a better appreciation of the pathophysiology of dural arteriovenous fistulas, of vein of Galen aneurismal malformation, and of autoregulation-related disorders in AVM patients. The hydraulic hypothesis provides a comprehensive frame to understand brain AVM hemodynamics and its effect on the CSF dynamics.

  8. Pathophysiology of increased cerebrospinal fluid pressure associated to brain arteriovenous malformations: The hydraulic hypothesis

    PubMed Central

    Rossitti, Sandro

    2013-01-01

    Background: Brain arteriovenous malformations (AVMs) produce circulatory and functional disturbances in adjacent as well as in remote areas of the brain, but their physiological effect on the cerebrospinal fluid (CSF) pressure is not well known. Methods: The hypothesis of an intrinsic disease mechanism leading to increased CSF pressure in all patients with brain AVM is outlined, based on a theory of hemodynamic control of intracranial pressure that asserts that CSF pressure is a fraction of the systemic arterial pressure as predicted by a two-resistor series circuit hydraulic model. The resistors are the arteriolar resistance (that is regulated by vasomotor tonus), and the venous resistance (which is mechanically passive as a Starling resistor). This theory is discussed and compared with the knowledge accumulated by now on intravasal pressures and CSF pressure measured in patients with brain AVM. Results: The theory provides a basis for understanding the occurrence of pseudotumor cerebri syndrome in patients with nonhemorrhagic brain AVMs, for the occurrence of local mass effect and brain edema bordering unruptured AVMs, and for the development of hydrocephalus in patients with unruptured AVMs. The theory also contributes to a better appreciation of the pathophysiology of dural arteriovenous fistulas, of vein of Galen aneurismal malformation, and of autoregulation-related disorders in AVM patients. Conclusions: The hydraulic hypothesis provides a comprehensive frame to understand brain AVM hemodynamics and its effect on the CSF dynamics. PMID:23607064

  9. Low noise charge sensitive preamplifier DC stabilized without a physical resistor

    DOEpatents

    Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

    1994-09-13

    The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

  10. Low noise charge sensitive preamplifier DC stabilized without a physical resistor

    DOEpatents

    Bertuccio, G.; Rehak, P.; Xi, D.

    1994-09-13

    The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier. 6 figs.

  11. Measurements of rare isotopes of U and Th by MC-ICP-MS using a 1013 ohm resistor

    NASA Astrophysics Data System (ADS)

    Pythoud, M.; Edwards, R. L.; Cheng, H.; Lu, Y.; Zhang, P.; Nissen, J.; Berry, A. E.

    2016-12-01

    We have tested a 1013 ohm resistor on a Thermo-Scientific Neptune Plus, a multi-collector inductively-coupled plasma mass spectrometer (MC-ICP-MS), for the measurement of rare isotopes of uranium (U) and thorium (Th). In nature, the isotopic disequilibrium among U-series nuclides provides the potential to date materials and time processes over the last 700,000 years. Using gravimetric standards and a Minnesota stalagmite, we demonstrate the reproducibility of δ234U and 230Th dates with uncertainties at the 1-‰ to sub-‰ level (2σ), with relatively small samples. Compared to traditional secondary electron multiplier (SEM) techniques, measurement times decrease from > 1 hour to < 5 min for U and from tens of min to < 2 min for Th, with comparable or better precision. The characteristics of the new amplifier design and typical instrumental conditions allow for 234U and 230Th sample loads as small as 1-2 pg, a reduction in sample size close to an order of magnitude over cup measurements with 1011 ohm resistors. The main sources of error include the amplifier noise, uncertainty in the characterization of the tailing effect, and in some cases, counting statistics. Importantly, our overall characterization suggests that this new method forms the basis for future and further improvements on instrumental precision.

  12. Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.

    We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantummore » phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.« less

  13. A new piezoelectric energy harvesting design concept: multimodal energy harvesting skin.

    PubMed

    Lee, Soobum; Youn, Byeng D

    2011-03-01

    This paper presents an advanced design concept for a piezoelectric energy harvesting (EH), referred to as multimodal EH skin. This EH design facilitates the use of multimodal vibration and enhances power harvesting efficiency. The multimodal EH skin is an extension of our previous work, EH skin, which was an innovative design paradigm for a piezoelectric energy harvester: a vibrating skin structure and an additional thin piezoelectric layer in one device. A computational (finite element) model of the multilayered assembly - the vibrating skin structure and piezoelectric layer - is constructed and the optimal topology and/or shape of the piezoelectric layer is found for maximum power generation from multiple vibration modes. A design rationale for the multimodal EH skin was proposed: designing a piezoelectric material distribution and external resistors. In the material design step, the piezoelectric material is segmented by inflection lines from multiple vibration modes of interests to minimize voltage cancellation. The inflection lines are detected using the voltage phase. In the external resistor design step, the resistor values are found for each segment to maximize power output. The presented design concept, which can be applied to any engineering system with multimodal harmonic-vibrating skins, was applied to two case studies: an aircraft skin and a power transformer panel. The excellent performance of multimodal EH skin was demonstrated, showing larger power generation than EH skin without segmentation or unimodal EH skin.

  14. High speed transient sampler

    DOEpatents

    McEwan, T.E.

    1995-11-28

    A high speed sampler comprises a meandered sample transmission line for transmitting an input signal, a straight strobe transmission line for transmitting a strobe signal, and a plurality of sampling gates along the transmission lines. The sampling gates comprise a four terminal diode bridge having a first strobe resistor connected from a first terminal of the bridge to the positive strobe line, a second strobe resistor coupled from the third terminal of the bridge to the negative strobe line, a tap connected to the second terminal of the bridge and to the sample transmission line, and a sample holding capacitor connected to the fourth terminal of the bridge. The resistance of the first and second strobe resistors is much higher than the signal transmission line impedance in the preferred system. This results in a sampling gate which applies a very small load on the sample transmission line and on the strobe generator. The sample holding capacitor is implemented using a smaller capacitor and a larger capacitor isolated from the smaller capacitor by resistance. The high speed sampler of the present invention is also characterized by other optimizations, including transmission line tap compensation, stepped impedance strobe line, a multi-layer physical layout, and unique strobe generator design. A plurality of banks of such samplers are controlled for concatenated or interleaved sample intervals to achieve long sample lengths or short sample spacing. 17 figs.

  15. High speed transient sampler

    DOEpatents

    McEwan, Thomas E.

    1995-01-01

    A high speed sampler comprises a meandered sample transmission line for transmitting an input signal, a straight strobe transmission line for transmitting a strobe signal, and a plurality of sampling gates along the transmission lines. The sampling gates comprise a four terminal diode bridge having a first strobe resistor connected from a first terminal of the bridge to the positive strobe line, a second strobe resistor coupled from the third terminal of the bridge to the negative strobe line, a tap connected to the second terminal of the bridge and to the sample transmission line, and a sample holding capacitor connected to the fourth terminal of the bridge. The resistance of the first and second strobe resistors is much higher than the signal transmission line impedance in the preferred system. This results in a sampling gate which applies a very small load on the sample transmission line and on the strobe generator. The sample holding capacitor is implemented using a smaller capacitor and a larger capacitor isolated from the smaller capacitor by resistance. The high speed sampler of the present invention is also characterized by other optimizations, including transmission line tap compensation, stepped impedance strobe line, a multi-layer physical layout, and unique strobe generator design. A plurality of banks of such samplers are controlled for concatenated or interleaved sample intervals to achieve long sample lengths or short sample spacing.

  16. An improved electronic determination of the Boltzmann constant by Johnson noise thermometry.

    PubMed

    Qu, Jifeng; Benz, Samuel P; Coakley, Kevin; Rogalla, Horst; Tew, Weston L; White, Rod; Zhou, Kunli; Zhou, Zhenyu

    2017-08-01

    Recent measurements using acoustic gas thermometry have determined the value of the Boltzmann constant, k , with a relative uncertainty less than 1 × 10 -6 . These results have been supported by a measurement with a relative uncertainty of 1.9 × 10 -6 made with dielectric-constant gas thermometry. Together, the measurements meet the requirements of the International Committee for Weights and Measures and enable them to proceed with the redefinition of the kelvin in 2018. In further support, we provide a new determination of k using a purely electronic approach, Johnson noise thermometry, in which the thermal noise power generated by a sensing resistor immersed in a triple-point-of-water cell is compared to the noise power of a quantum-accurate pseudo-random noise waveform of nominally equal noise power. The experimental setup differs from that of the 2015 determination in several respects: a 100 Ω resistor is used as the thermal noise source, identical thin coaxial cables made of solid beryllium-copper conductors and foam dielectrics are used to connect the thermal and quantum-accurate noise sources to the correlator so as to minimize the temperature and frequency sensitivity of the impedances in the connecting leads, and no trimming capacitors or inductors are inserted into the connecting leads. The combination of reduced uncertainty due to spectral mismatches in the connecting leads and reduced statistical uncertainty due to a longer integration period of 100 d results in an improved determination of k = 1.380 649 7(37) × 10 -23 J K -1 with a relative standard uncertainty of 2.7 × 10 -6 and a relative offset of 0.89 × 10 -6 from the CODATA 2014 recommended value. The most significant terms in the uncertainty budget, the statistical uncertainty and the spectral-mismatch uncertainty, are uncorrelated with the corresponding uncertainties in the 2015 measurements.

  17. Weighted networks as randomly reinforced urn processes

    NASA Astrophysics Data System (ADS)

    Caldarelli, Guido; Chessa, Alessandro; Crimaldi, Irene; Pammolli, Fabio

    2013-02-01

    We analyze weighted networks as randomly reinforced urn processes, in which the edge-total weights are determined by a reinforcement mechanism. We develop a statistical test and a procedure based on it to study the evolution of networks over time, detecting the “dominance” of some edges with respect to the others and then assessing if a given instance of the network is taken at its steady state or not. Distance from the steady state can be considered as a measure of the relevance of the observed properties of the network. Our results are quite general, in the sense that they are not based on a particular probability distribution or functional form of the random weights. Moreover, the proposed tool can be applied also to dense networks, which have received little attention by the network community so far, since they are often problematic. We apply our procedure in the context of the International Trade Network, determining a core of “dominant edges.”

  18. Effects of behavioral patterns and network topology structures on Parrondo’s paradox

    PubMed Central

    Ye, Ye; Cheong, Kang Hao; Cen, Yu-wan; Xie, Neng-gang

    2016-01-01

    A multi-agent Parrondo’s model based on complex networks is used in the current study. For Parrondo’s game A, the individual interaction can be categorized into five types of behavioral patterns: the Matthew effect, harmony, cooperation, poor-competition-rich-cooperation and a random mode. The parameter space of Parrondo’s paradox pertaining to each behavioral pattern, and the gradual change of the parameter space from a two-dimensional lattice to a random network and from a random network to a scale-free network was analyzed. The simulation results suggest that the size of the region of the parameter space that elicits Parrondo’s paradox is positively correlated with the heterogeneity of the degree distribution of the network. For two distinct sets of probability parameters, the microcosmic reasons underlying the occurrence of the paradox under the scale-free network are elaborated. Common interaction mechanisms of the asymmetric structure of game B, behavioral patterns and network topology are also revealed. PMID:27845430

  19. Effects of behavioral patterns and network topology structures on Parrondo’s paradox

    NASA Astrophysics Data System (ADS)

    Ye, Ye; Cheong, Kang Hao; Cen, Yu-Wan; Xie, Neng-Gang

    2016-11-01

    A multi-agent Parrondo’s model based on complex networks is used in the current study. For Parrondo’s game A, the individual interaction can be categorized into five types of behavioral patterns: the Matthew effect, harmony, cooperation, poor-competition-rich-cooperation and a random mode. The parameter space of Parrondo’s paradox pertaining to each behavioral pattern, and the gradual change of the parameter space from a two-dimensional lattice to a random network and from a random network to a scale-free network was analyzed. The simulation results suggest that the size of the region of the parameter space that elicits Parrondo’s paradox is positively correlated with the heterogeneity of the degree distribution of the network. For two distinct sets of probability parameters, the microcosmic reasons underlying the occurrence of the paradox under the scale-free network are elaborated. Common interaction mechanisms of the asymmetric structure of game B, behavioral patterns and network topology are also revealed.

  20. Educational network comparative analysis of small groups: Short- and long-term communications

    NASA Astrophysics Data System (ADS)

    Berg, D. B.; Zvereva, O. M.; Nazarova, Yu. Yu.; Chepurov, E. G.; Kokovin, A. V.; Ranyuk, S. V.

    2017-11-01

    The present study is devoted to the discussion of small group communication network structures. These communications were observed in student groups, where actors were united with a regular educational activity. The comparative analysis was carried out for networks of short-term (1 hour) and long-term (4 weeks) communications, it was based on seven structural parameters, and consisted of two stages. At the first stage, differences between the network graphs were examined, and the random corresponding Bernoulli graphs were built. At the second stage, revealed differences were compared. Calculations were performed using UCINET software framework. It was found out that networks of long-term and short-term communications are quite different: the structure of a short-term communication network is close to a random one, whereas the most of long-term communication network parameters differ from the corresponding random ones by more than 30%. This difference can be explained by strong "noisiness" of a short-term communication network, and the lack of social in it.

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