Short range, ultra-wideband radar with high resolution swept range gate

DOEpatents

McEwan, T.E.

1998-05-26

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. 14 figs.

Short range, ultra-wideband radar with high resolution swept range gate

DOEpatents

McEwan, Thomas E.

1998-05-26

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control.

Radiation and Scattering Compact Antenna Laboratory (RASCAL) Capabilities Brochure

DTIC Science & Technology

2016-09-06

Array Measurements Integrated Measurement of Subsystems with Digital Backends RADIATION AND SCATTERING COMPACT ANTENNA LABORATORY...hardware gating to eliminate sources of error within the range itself. Processing is also available for multi-arm spiral antennas for the generation

NEGATIVE GATE GENERATOR

DOEpatents

Jones, C.S.; Eaton, T.E.

1958-02-01

This patent relates to pulse generating circuits and more particularly to rectangular pulse generators. The pulse generator of the present invention incorporates thyratrons as switching elements to discharge a first capacitor through a load resistor to initiate and provide the body of a Pulse, and subsequently dlscharge a second capacitor to impress the potential of its charge, with opposite potential polarity across the load resistor to terminate the pulse. Accurate rectangular pulses in the millimicrosecond range are produced across a low impedance by this generator.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

NASA Astrophysics Data System (ADS)

Sun, Huarui; Bajo, Miguel Montes; Uren, Michael J.; Kuball, Martin

2015-01-01

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage "hot spots" at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7-0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which is consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.

Double optical gating of high-order harmonic generation with carrier-envelope phase stabilized lasers.

PubMed

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan; Khan, Sabih D; Shakya, Mahendra M; Moon, Eric; Chang, Zenghu

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2 pi radians.

Double Optical Gating of High-Order Harmonic Generation with Carrier-Envelope Phase Stabilized Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan

2008-03-14

We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2{pi} radians.

Modular design and implementation of field-programmable-gate-array-based Gaussian noise generator

NASA Astrophysics Data System (ADS)

Li, Yuan-Ping; Lee, Ta-Sung; Hwang, Jeng-Kuang

2016-05-01

The modular design of a Gaussian noise generator (GNG) based on field-programmable gate array (FPGA) technology was studied. A new range reduction architecture was included in a series of elementary function evaluation modules and was integrated into the GNG system. The approximation and quantisation errors for the square root module with a first polynomial approximation were high; therefore, we used the central limit theorem (CLT) to improve the noise quality. This resulted in an output rate of one sample per clock cycle. We subsequently applied Newton's method for the square root module, thus eliminating the need for the use of the CLT because applying the CLT resulted in an output rate of two samples per clock cycle (>200 million samples per second). Two statistical tests confirmed that our GNG is of high quality. Furthermore, the range reduction, which is used to solve a limited interval of the function approximation algorithms of the System Generator platform using Xilinx FPGAs, appeared to have a higher numerical accuracy, was operated at >350 MHz, and can be suitably applied for any function evaluation.

Manipulation of Spin-Torque Generation Using Ultrathin Au

NASA Astrophysics Data System (ADS)

An, Hongyu; Haku, Satoshi; Kanno, Yusuke; Nakayama, Hiroyasu; Maki, Hideyuki; Shi, Ji; Ando, Kazuya

2018-06-01

The generation and the manipulation of current-induced spin-orbit torques are of essential interest in spintronics. However, in spite of the vital progress in spin orbitronics, electric control of the spin-torque generation still remains elusive and challenging. We report on electric control of the spin-torque generation using ionic-liquid gating of ultrathin Au. We show that by simply depositing a SiO2 capping layer on an ultrathin-Au /Ni81Fe19 bilayer, the spin-torque generation efficiency is drastically enhanced by a maximum of 7 times. This enhancement is verified to be originated from the rough ultrathin-Au /Ni81Fe19 interface induced by the SiO2 deposition, which results in the enhancement of the interface spin-orbit scattering. We further show that the spin-torque generation efficiency from the ultrathin Au film can be reversibly manipulated by a factor of 2 using the ionic gating with an external electric field within a small range of 1 V. These results pave a way towards the efficient control of the spin-torque generation in spintronic applications.

Generation of isolated attosecond pulses with enhancement cavities—a theoretical study

NASA Astrophysics Data System (ADS)

Högner, M.; Tosa, V.; Pupeza, I.

2017-03-01

The generation of extreme-ultraviolet (XUV) isolated attosecond pulses (IAPs) has enabled experimental access to the fastest phenomena in nature observed so far, namely the dynamics of electrons in atoms, molecules and solids. However, nowadays the highest repetition rates at which IAPs can be generated lies in the {kHz} range. This represents a rather severe restriction for numerous experiments involving the detection of charged particles, where the desired number of generated particles per shot is limited by space charge effects to ideally one. Here, we present a theoretical study on the possibility of efficiently producing IAPs at multi-{MHz} repetition rates via cavity-enhanced high-harmonic generation (HHG). To this end, we assume parameters of state-of-the-art Yb-based femtosecond laser technology to evaluate several time-gating methods which could generate IAPs in enhancement cavities. We identify polarization gating and a new method, employing non-collinear optical gating in a tailored transverse cavity mode, as suitable candidates and analyze these via extensive numerical modeling. The latter, which we dub transverse mode gating (TMG) promises the highest efficiency and robustness. Assuming 0.7 μ {{J}}, 5-cycle pulses from the seeding laser and a state-of-the-art enhancement cavity, we show that TMG bares the potential to generate IAPs with photon energies around 100 {eV} and a photon flux of at least {10}8 {photons} {{{s}}}-1 at repetition rates of 10 {MHz} and higher. This result reveals a roadmap towards a dramatic decrease in measurement time (and, equivalently, an increase in the signal-to-noise ratio) in photoelectron spectroscopy and microscopy. In particular, it paves the way to combining attosecond streaking with photoelectron emission microscopy, affording, for the first time, the spatially and temporally resolved observation of plasmonic fields in nanostructures. Furthermore, it promises the generation of frequency combs with an unprecedented bandwidth for XUV precision spectroscopy.

System and Method for Scan Range Gating

NASA Technical Reports Server (NTRS)

Lindemann, Scott (Inventor); Zuk, David M. (Inventor)

2017-01-01

A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

Digital gate pulse generator for cycloconverter control

DOEpatents

Klein, Frederick F.; Mutone, Gioacchino A.

1989-01-01

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Sci-Thur PM: YIS - 03: Comparing 4D-VMAT, Gated-VMAT and 3D-VMAT in SBRT treatment of lung cancer.

PubMed

Chin, E; Loewen, S; Nichol, A; Otto, K

2012-07-01

To evaluate the treatment plan qualities of 4D-VMAT, gated-VMAT and 3D-VMAT in the treatment of non-small cell lung cancer (NSCLC) in stereotactic body radiation therapy (SBRT). 4D-VMAT is a motion compensation strategy that aims to exploit relative target and OAR motion to increase OAR sparing over 3D-VMAT without the long treatment times associated with gated-VMAT. The 4D-VMAT algorithm incorporates the entire patient respiratory cycle and 4D-CT in the optimization process. Resulting treatment plans synchronize the delivery of each MLC aperture to a specific phase of the target motion. Using software developed in Matlab™, SBRT treatment plans for 4D-VMAT, gated-VMAT and 3D-VMAT were generated on 3 patients with NSCLC. Tumour motion ranged from 1.4-3.4 cm. The fractionation scheme was 48Gy in 4 fractions with the GTV receiving 100% of the prescribed dose. For gated-VMAT, the treatment window constrained residual tumour motion to 3 mm or less corresponding to duty cycles of 40-60%. In 3D-VMAT, the ITV was generated by merging the GTV from all phases. A b-spline transformation model was used to register the 4D-CT images and DVHs were calculated from total dose accumulated on the max expiration phase. For the majority of OARs, gated-VMAT provided the greatest radiation sparing but significantly extended treatment times (25-35 gantry interruptions/arc). For 3D-VMAT, only 2 patients had clinically acceptable plans that met all the strict dose limits. OAR sparing in 4D-VMAT was comparable to gated-VMAT but with significantly improved delivery efficiency. © 2012 American Association of Physicists in Medicine.

Paralleling power MOSFETs in their active region: Extended range of passively forced current sharing

NASA Technical Reports Server (NTRS)

Niedra, Janis M.

1989-01-01

A simple passive circuit that improves current balance in parallelled power MOSFETs that are not precisely matched and that are operated in their active region from a common gate drive are exhibited. A nonlinear circuit consisting of diodes and resistors generates the differential gate potential required to correct for unbalance while maintaining low losses over a range of current. Also application of a thin tape wound magnetic core to effect dynamic current balance is reviewed, and a simple theory is presented showing that for operation in the active region the branch currents tend to revert to their normal unbalanced values even if the core is not driven into saturation. Results of several comparative experiments are given.

Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Huarui, E-mail: huarui.sun@bristol.ac.uk; Bajo, Miguel Montes; Uren, Michael J.

2015-01-26

Gate leakage degradation of AlGaN/GaN high electron mobility transistors under OFF-state stress is investigated using a combination of electrical, optical, and surface morphology characterizations. The generation of leakage “hot spots” at the edge of the gate is found to be strongly temperature accelerated. The time for the formation of each failure site follows a Weibull distribution with a shape parameter in the range of 0.7–0.9 from room temperature up to 120 °C. The average leakage per failure site is only weakly temperature dependent. The stress-induced structural degradation at the leakage sites exhibits a temperature dependence in the surface morphology, which ismore » consistent with a surface defect generation process involving temperature-associated changes in the breakdown sites.« less

Discrete Wigner formalism for qubits and noncontextuality of Clifford gates on qubit stabilizer states

NASA Astrophysics Data System (ADS)

Kocia, Lucas; Love, Peter

2017-12-01

We show that qubit stabilizer states can be represented by non-negative quasiprobability distributions associated with a Wigner-Weyl-Moyal formalism where Clifford gates are positive state-independent maps. This is accomplished by generalizing the Wigner-Weyl-Moyal formalism to three generators instead of two—producing an exterior, or Grassmann, algebra—which results in Clifford group gates for qubits that act as a permutation on the finite Weyl phase space points naturally associated with stabilizer states. As a result, a non-negative probability distribution can be associated with each stabilizer state's three-generator Wigner function, and these distributions evolve deterministically to one another under Clifford gates. This corresponds to a hidden variable theory that is noncontextual and local for qubit Clifford gates while Clifford (Pauli) measurements have a context-dependent representation. Equivalently, we show that qubit Clifford gates can be expressed as propagators within the three-generator Wigner-Weyl-Moyal formalism whose semiclassical expansion is truncated at order ℏ0 with a finite number of terms. The T gate, which extends the Clifford gate set to one capable of universal quantum computation, requires a semiclassical expansion of the propagator to order ℏ1. We compare this approach to previous quasiprobability descriptions of qubits that relied on the two-generator Wigner-Weyl-Moyal formalism and find that the two-generator Weyl symbols of stabilizer states result in a description of evolution under Clifford gates that is state-dependent, in contrast to the three-generator formalism. We have thus extended Wigner non-negative quasiprobability distributions from the odd d -dimensional case to d =2 qubits, which describe the noncontextuality of Clifford gates and contextuality of Pauli measurements on qubit stabilizer states.

Body monitoring and imaging apparatus and method

DOEpatents

McEwan, T.E.

1998-06-16

A non-acoustic pulse-echo radar monitor is employed in the repetitive mode, whereby a large number of reflected pulses are averaged to produce a voltage that modulates an audio oscillator to produce a tone that corresponds to the heart motion. The antenna used in this monitor generally comprises two flat copper foils, thus permitting the antenna to be housed in a substantially flat housing. The monitor converts the detected voltage to an audible signal with both amplitude modulation and Doppler effect. It further uses a dual time constant to reduce the effect of gross sensor-to-surface movement. The monitor detects the movement of one or more internal body parts, such as the heart, lungs, arteries, and vocal chords, and includes a pulse generator for simultaneously inputting a sequence of pulses to a transmit path and a grating path. The pulses transmitted along the transmit path drive Oh impulse, generator and provide corresponding transmit pulses that are applied to a transmit antenna. The gating path includes a range delay generator which generates timed gating pulses. The timed gating pulses cause the receive path to selectively conduct pulses reflected from the body parts and received by a receive antenna. The monitor output potential can be separated into a cardiac output indicative of the physical movement of the heart, and a pulmonary output indicative of the physical movement of the lung. The impulse generator in the transmit path can be replaced with a pulsed RF generator. 13 figs.

Body monitoring and imaging apparatus and method

DOEpatents

McEwan, Thomas E.

1998-01-01

A non-acoustic pulse-echo radar monitor is employed in the repetitive mode, whereby a large number of reflected pulses are averaged to produce a voltage that modulates an audio oscillator to produce a tone that corresponds to the heart motion. The antenna used in this monitor generally comprises two flat copper foils, thus permitting the antenna to be housed in a substantially flat housing. The monitor converts the detected voltage to an audible signal with both amplitude modulation and Doppler effect. It further uses a dual time constant to reduce the effect of gross sensor-to-surface movement. The monitor detects the movement of one or more internal body parts, such as the heart, lungs, arteries, and vocal chords, and includes a pulse generator for simultaneously inputting a sequence of pulses to a transmit path and a grating path. The pulses transmitted along the transmit path drive Oh impulse, generator and provide corresponding transmit pulses that are applied to a transmit antenna. The gating path includes a range delay generator which generates timed gating pulses. The timed gating pulses cause the receive path to selectively conduct pulses reflected from the body parts and received by a receive antenna. The monitor output potential can be separated into a cardiac output indicative of the physical movement of the heart, and a pulmonary output indicative of the physical movement of the lung. The impulse generator in the transmit path can be replaced with a pulsed RF generator.

Impulse radar with swept range gate

DOEpatents

McEwan, Thomas E.

1998-09-08

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

Impulse radar with swept range gate

DOEpatents

McEwan, T.E.

1998-09-08

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

Gated IR imaging with 128 × 128 HgCdTe electron avalanche photodiode FPA

NASA Astrophysics Data System (ADS)

Beck, Jeff; Woodall, Milton; Scritchfield, Richard; Ohlson, Martha; Wood, Lewis; Mitra, Pradip; Robinson, Jim

2007-04-01

The next generation of IR sensor systems will include active imaging capabilities. One example of such a system is a gated-active/passive system. The gated-active/passive system promises long-range target detection and identification. A detector that is capable of both active and passive modes of operation opens up the possibility of a self-aligned system that uses a single focal plane. The detector would need to be sensitive in the 3-5 μm band for passive mode operation. In the active mode, the detector would need to be sensitive in eye-safe range, e.g. 1.55 μm, and have internal gain to achieve the required system sensitivity. The MWIR HgCdTe electron injection avalanche photodiode (e-APD) not only provides state-of-the-art 3-5 μm spectral sensitivity, but also high avalanche photodiode gain without minimal excess noise. Gains of greater than 1000 have been measured in MWIR e-APDs with a gain independent excess noise factor of 1.3. This paper reports the application of the mid-wave HgCdTe e-APD for near-IR gated-active/passive imaging. Specifically a 128x128 FPA composed of 40 μm pitch, 4.2 μm to 5 μm cutoff, APD detectors with a custom readout integrated circuit was designed, fabricated, and tested. Median gains as high as 946 at 11 V bias with noise equivalent inputs as low as 0.4 photon were measured at 80 K. A gated imaging demonstration system was designed and built using commercially available parts. High resolution gated imagery out to 9 km was obtained with this system that demonstrated predicted MTF, precision gating, and sub 10 photon sensitivity.

A heuristic for suffix solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bilgory, A.; Gajski, D.D.

1986-01-01

The suffix problem has appeared in solutions of recurrence systems for parallel and pipelined machines and more recently in the design of gate and silicon compilers. In this paper the authors present two algorithms. The first algorithm generates parallel suffix solutions with minimum cost for a given length, time delay, availability of initial values, and fanout. This algorithm generates a minimal solution for any length n and depth range log/sub 2/ N to N. The second algorithm reduces the size of the solutions generated by the first algorithm.

Non-optically combined multispectral source for IR, visible, and laser testing

NASA Astrophysics Data System (ADS)

Laveigne, Joe; Rich, Brian; McHugh, Steve; Chua, Peter

2010-04-01

Electro Optical technology continues to advance, incorporating developments in infrared and laser technology into smaller, more tightly-integrated systems that can see and discriminate military targets at ever-increasing distances. New systems incorporate laser illumination and ranging with gated sensors that allow unparalleled vision at a distance. These new capabilities augment existing all-weather performance in the mid-wave infrared (MWIR) and long-wave infrared (LWIR), as well as low light level visible and near infrared (VNIR), giving the user multiple means of looking at targets of interest. There is a need in the test industry to generate imagery in the relevant spectral bands, and to provide temporal stimulus for testing range-gated systems. Santa Barbara Infrared (SBIR) has developed a new means of combining a uniform infrared source with uniform laser and visible sources for electro-optics (EO) testing. The source has been designed to allow laboratory testing of surveillance systems incorporating an infrared imager and a range-gated camera; and for field testing of emerging multi-spectral/fused sensor systems. A description of the source will be presented along with performance data relating to EO testing, including output in pertinent spectral bands, stability and resolution.

A second-generation constrained reaction volume shock tube

NASA Astrophysics Data System (ADS)

Campbell, M. F.; Tulgestke, A. M.; Davidson, D. F.; Hanson, R. K.

2014-05-01

We have developed a shock tube that features a sliding gate valve in order to mechanically constrain the reactive test gas mixture to an area close to the shock tube endwall, separating it from a specially formulated non-reactive buffer gas mixture. This second-generation Constrained Reaction Volume (CRV) strategy enables near-constant-pressure shock tube test conditions for reactive experiments behind reflected shocks, thereby enabling improved modeling of the reactive flow field. Here we provide details of the design and operation of the new shock tube. In addition, we detail special buffer gas tailoring procedures, analyze the buffer/test gas interactions that occur on gate valve opening, and outline the size range of fuels that can be studied using the CRV technique in this facility. Finally, we present example low-temperature ignition delay time data to illustrate the CRV shock tube's performance.

Frequency-resolved optical gating with the use of second-harmonic generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeLong, K.W.; Trebino, R.; Hunter, J.

1994-11-01

We discuss the use of second-harmonic generation (SHG) as the nonlinearity in the technique of frequency-resolved optical gating (FROG) for measuring the full intensity and phase evolution of an arbitrary ultrashort pulse. FROG that uses a third-order nonlinearity in the polarization-gate geometry has proved extremely successful, and the algorithm required for extraction of the intensity and the phase from the experimental data is quite robust. However, for pulse intensities less than [similar to] 1 MW, third-order nonlinearities generate insufficient signal strength, and therefore SHG FROG appears necessary. We discuss the theoretical, algorithmic, and experimental considerations of SHG FROG in detail.more » SHG FROG has an ambiguity in the direction of time, and its traces are somewhat unintuitive. Also, previously published algorithms are generally ineffective at extracting the intensity and the phase of an arbitrary laser pulse from the SHG FROG trace. We present an improved pulse-retrieval algorithm, based on the method of generalized projections, that is far superior to the previously published algorithms, although it is still not so robust as the polarization-gate algorithm. We discuss experimental sources of error such as pump depletion and group-velocity mismatch. We also present several experimental examples of pulses measured with SHG FROG and show that the derived intensities and phases are in agreement with more conventional diagnostic techniques, and we demonstrate the high-dynamic-range capability of SHG FROG. We conclude that, despite the above drawbacks, SHG FROG should be useful in measuring low-energy pulses.« less

Integration of SimSET photon history generator in GATE for efficient Monte Carlo simulations of pinhole SPECT.

PubMed

Chen, Chia-Lin; Wang, Yuchuan; Lee, Jason J S; Tsui, Benjamin M W

2008-07-01

The authors developed and validated an efficient Monte Carlo simulation (MCS) workflow to facilitate small animal pinhole SPECT imaging research. This workflow seamlessly integrates two existing MCS tools: simulation system for emission tomography (SimSET) and GEANT4 application for emission tomography (GATE). Specifically, we retained the strength of GATE in describing complex collimator/detector configurations to meet the anticipated needs for studying advanced pinhole collimation (e.g., multipinhole) geometry, while inserting the fast SimSET photon history generator (PHG) to circumvent the relatively slow GEANT4 MCS code used by GATE in simulating photon interactions inside voxelized phantoms. For validation, data generated from this new SimSET-GATE workflow were compared with those from GATE-only simulations as well as experimental measurements obtained using a commercial small animal pinhole SPECT system. Our results showed excellent agreement (e.g., in system point response functions and energy spectra) between SimSET-GATE and GATE-only simulations, and, more importantly, a significant computational speedup (up to approximately 10-fold) provided by the new workflow. Satisfactory agreement between MCS results and experimental data were also observed. In conclusion, the authors have successfully integrated SimSET photon history generator in GATE for fast and realistic pinhole SPECT simulations, which can facilitate research in, for example, the development and application of quantitative pinhole and multipinhole SPECT for small animal imaging. This integrated simulation tool can also be adapted for studying other preclinical and clinical SPECT techniques.

Effects of passive and active movement on vibrotactile detection thresholds of the Pacinian channel and forward masking.

PubMed

Yıldız, Mustafa Z; Toker, İpek; Özkan, Fatma B; Güçlü, Burak

2015-01-01

We investigated the gating effect of passive and active movement on the vibrotactile detection thresholds of the Pacinian (P) psychophysical channel and forward masking. Previous work on gating mostly used electrocutaneous stimulation and did not allow focusing on tactile submodalities. Ten healthy adults participated in our study. Passive movement was achieved by swinging a platform, on which the participant's stimulated hand was attached, manually by a trained operator. The root-mean-square value of the movement speed was kept in a narrow range (slow: 10-20 cm/s, fast: 50-60 cm/s). Active movement was performed by the participant him-/herself using the same apparatus. The tactile stimuli consisted of 250-Hz sinusoidal mechanical vibrations, which were generated by a shaker mounted on the movement platform and applied to the middle fingertip. In the forward-masking experiments, a high-level masking stimulus preceded the test stimulus. Each movement condition was tested separately in a two-interval forced-choice detection task. Both passive and active movement caused a robust gating effect, that is, elevation of thresholds, in the fast speed range. Statistically significant change of thresholds was not found in slow movement conditions. Passive movement yielded higher thresholds than those measured during active movement, but this could not be confirmed statistically. On the other hand, the effect of forward masking was approximately constant as the movement condition varied. These results imply that gating depends on both peripheral and central factors in the P channel. Active movement may have some facilitatory role and produce less gating. Additionally, the results support the hypothesis regarding a critical speed for gating, which may be relevant for daily situations involving vibrations transmitted through grasped objects and for manual exploration.

Thermodynamics of Activation Gating in Olfactory-Type Cyclic Nucleotide-Gated (CNGA2) Channels

PubMed Central

Nache, Vasilica; Kusch, Jana; Biskup, Christoph; Schulz, Eckhard; Zimmer, Thomas; Hagen, Volker; Benndorf, Klaus

2008-01-01

Olfactory-type cyclic nucleotide-gated (CNG) ion channels open by the binding of cyclic nucleotides to a binding domain in the C-terminus. Employing the Eyring rate theory, we performed a thermodynamic analysis of the activation gating in homotetrameric CNGA2 channels. Lowering the temperature shifted the concentration-response relationship to lower concentrations, resulting in a decrease of both the enthalpy ΔH and entropy ΔS upon channel opening, suggesting that the order of an open CNGA2 channel plus its environment is higher than that of the closed channel. Activation time courses induced by cGMP concentration jumps were used to study thermodynamics of the transition state. The activation enthalpies ΔH‡ were positive at all cGMP concentrations. In contrast, the activation entropy ΔS‡ was positive at low cGMP concentrations and became then negative at increasing cGMP concentrations. The enthalpic and entropic parts of the activation energies approximately balance each other at all cGMP concentrations, leaving the free enthalpy of activation in the range between 19 and 21 kcal/mol. We conclude that channel activation proceeds through different pathways at different cGMP concentrations. Compared to the unliganded channel, low cGMP concentrations generate a transitional state of lower order whereas high cGMP concentrations generate a transitional state of higher order. PMID:18567637

Influence of target reflection on three-dimensional range gated reconstruction.

PubMed

Chua, Sing Yee; Wang, Xin; Guo, Ningqun; Tan, Ching Seong

2016-08-20

The range gated technique is a promising laser ranging method that is widely used in different fields such as surveillance, industry, and military. In a range gated system, a reflected laser pulse returned from the target scene contains key information for range reconstruction, which directly affects the system performance. Therefore, it is necessary to study the characteristics and effects of the target reflection factor. In this paper, theoretical and experimental analyses are performed to investigate the influence of target reflection on three-dimensional (3D) range gated reconstruction. Based on laser detection and ranging (LADAR) and bidirectional reflection distribution function (BRDF) theory, a 3D range gated reconstruction model is derived and the effect on range accuracy is analyzed from the perspectives of target surface reflectivity and angle of laser incidence. Our theoretical and experimental study shows that the range accuracy is proportional to the target surface reflectivity, but it decreases when the angle of incidence increases to adhere to the BRDF model. The presented findings establish a comprehensive understanding of target reflection in 3D range gated reconstruction, which is of interest to various applications such as target recognition and object modeling. This paper provides a reference for future improvement to perform accurate range compensation or correction.

Realization of the three-qubit quantum controlled gate based on matching Hermitian generators

NASA Astrophysics Data System (ADS)

Gautam, Kumar; Rawat, Tarun Kumar; Parthasarathy, Harish; Sharma, Navneet; Upadhyaya, Varun

2017-05-01

This paper deals with the design of quantum unitary gate by matching the Hermitian generators. A given complicated quantum controlled gate is approximated by perturbing a simple quantum system with a small time-varying potential. The basic idea is to evaluate the generator H_φ of the perturbed system approximately using first-order perturbation theory in the interaction picture. H_φ depends on a modulating signal φ(t){:} 0≤t≤T which modulates a known potential V. The generator H_φ of the given gate U_g is evaluated using H_g=ι log U_g. The optimal modulating signal φ(t) is chosen so that \\Vert H_g - H_φ \\Vert is a minimum. The simple quantum system chosen for our simulation is harmonic oscillator with charge perturbed by an electric field that is a constant in space but time varying and is controlled externally. This is used to approximate the controlled unitary gate obtained by perturbing the oscillator with an anharmonic term proportional to q^3. Simulations results show significantly small noise-to-signal ratio. Finally, we discuss how the proposed method is particularly suitable for designing some commonly used unitary gates. Another example was chosen to illustrate this method of gate design is the ion-trap model.

Robust fluoroscopic respiratory gating for lung cancer radiotherapy without implanted fiducial markers

NASA Astrophysics Data System (ADS)

Cui, Ying; Dy, Jennifer G.; Sharp, Greg C.; Alexander, Brian; Jiang, Steve B.

2007-02-01

For gated lung cancer radiotherapy, it is difficult to generate accurate gating signals due to the large uncertainties when using external surrogates and the risk of pneumothorax when using implanted fiducial markers. We have previously investigated and demonstrated the feasibility of generating gating signals using the correlation scores between the reference template image and the fluoroscopic images acquired during the treatment. In this paper, we present an in-depth study, aiming at the improvement of robustness of the algorithm and its validation using multiple sets of patient data. Three different template generating and matching methods have been developed and evaluated: (1) single template method, (2) multiple template method, and (3) template clustering method. Using the fluoroscopic data acquired during patient setup before each fraction of treatment, reference templates are built that represent the tumour position and shape in the gating window, which is assumed to be at the end-of-exhale phase. For the single template method, all the setup images within the gating window are averaged to generate a composite template. For the multiple template method, each setup image in the gating window is considered as a reference template and used to generate an ensemble of correlation scores. All the scores are then combined to generate the gating signal. For the template clustering method, clustering (grouping of similar objects together) is performed to reduce the large number of reference templates into a few representative ones. Each of these methods has been evaluated against the reference gating signal as manually determined by a radiation oncologist. Five patient datasets were used for evaluation. In each case, gated treatments were simulated at both 35% and 50% duty cycles. False positive, negative and total error rates were computed. Experiments show that the single template method is sensitive to noise; the multiple template and clustering methods are more robust to noise due to the smoothing effect of aggregation of correlation scores; and the clustering method results in the best performance in terms of computational efficiency and accuracy.

A Prospective Cohort Study of Gated Stereotactic Liver Radiation Therapy Using Continuous Internal Electromagnetic Motion Monitoring.

PubMed

Worm, Esben S; Høyer, Morten; Hansen, Rune; Larsen, Lars P; Weber, Britta; Grau, Cai; Poulsen, Per R

2018-06-01

Intrafraction motion can compromise the treatment accuracy in liver stereotactic body radiation therapy (SBRT). Respiratory gating can improve treatment delivery; however, gating based on external motion surrogates is inaccurate. The present study reports the use of Calypso-based internal electromagnetic motion monitoring for gated liver SBRT. Fifteen patients were included in a study of 3-fraction respiratory gated liver SBRT guided by 3 implanted electromagnetic transponders. The planning target volume was created by a 5-mm axial and 7-mm (n = 12) or 10-mm (n = 3) craniocaudal expansion of the clinical target volume (CTV) and covered with 67% of the prescribed CTV mean dose. Treatment was gated to the end-exhale phase of the respiratory cycle with beam-on when the target deviated <3 mm (left-right/anteroposterior) and 4 mm (craniocaudal) from the planned position, according to the monitored (25-Hz) transponder centroid position. The couch was adjusted remotely if baseline drifts >1 to 2 mm occurred. Log files of transponder motion were used to determine the geometric error and reconstruct the delivered CTV dose in the actual gated treatments and in simulated nongated treatments. No severe side effects were observed in relation to transponder implantation. All 45 treatment fractions were successfully guided using the Calypso system. The mean number of couch corrections during each gated fraction was 2.8 (range 0-7). The mean duty cycle during gated treatment was 62.5% (range 29.1%-84.9%). Without gating, the mean 3-dimensional geometric error during a fraction would have been 5.4 mm (range 2.7-12.1). Gating reduced this error to 2.0 mm (range 1.2-3.0). The patient mean reduction in minimum dose to 95% of the CTV relative to the planned dose was 6.0 percentage points (range 0.7-22.0) without gating and 0.8 percentage point (range 0.2-2.0) with gating. Gating using internal motion monitoring was successfully applied for liver SBRT. It markedly improved the geometric and dosimetric accuracy compared with nongated standard treatment. Copyright © 2018 Elsevier Inc. All rights reserved.

Architecture and applications of a high resolution gated SPAD image sensor

PubMed Central

Burri, Samuel; Maruyama, Yuki; Michalet, Xavier; Regazzoni, Francesco; Bruschini, Claudio; Charbon, Edoardo

2014-01-01

We present the architecture and three applications of the largest resolution image sensor based on single-photon avalanche diodes (SPADs) published to date. The sensor, fabricated in a high-voltage CMOS process, has a resolution of 512 × 128 pixels and a pitch of 24 μm. The fill-factor of 5% can be increased to 30% with the use of microlenses. For precise control of the exposure and for time-resolved imaging, we use fast global gating signals to define exposure windows as small as 4 ns. The uniformity of the gate edges location is ∼140 ps (FWHM) over the whole array, while in-pixel digital counting enables frame rates as high as 156 kfps. Currently, our camera is used as a highly sensitive sensor with high temporal resolution, for applications ranging from fluorescence lifetime measurements to fluorescence correlation spectroscopy and generation of true random numbers. PMID:25090572

Towards component-based validation of GATE: aspects of the coincidence processor

PubMed Central

Moraes, Eder R.; Poon, Jonathan K.; Balakrishnan, Karthikayan; Wang, Wenli; Badawi, Ramsey D.

2014-01-01

GATE is public domain software widely used for Monte Carlo simulation in emission tomography. Validations of GATE have primarily been performed on a whole-system basis, leaving the possibility that errors in one sub-system may be offset by errors in others. We assess the accuracy of the GATE PET coincidence generation sub-system in isolation, focusing on the options most closely modeling the majority of commercially available scanners. Independent coincidence generators were coded by teams at Toshiba Medical Research Unit (TMRU) and UC Davis. A model similar to the Siemens mCT scanner was created in GATE. Annihilation photons interacting with the detectors were recorded. Coincidences were generated using GATE, TMRU and UC Davis code and results compared to “ground truth” obtained from the history of the photon interactions. GATE was tested twice, once with every qualified single event opening a time window and initiating a coincidence check (the “multiple window method”), and once where a time window is opened and a coincidence check initiated only by the first single event to occur after the end of the prior time window (the “single window method”). True, scattered and random coincidences were compared. Noise equivalent count rates were also computed and compared. The TMRU and UC Davis coincidence generators agree well with ground truth. With GATE, reasonable accuracy can be obtained if the single window method option is chosen and random coincidences are estimated without use of the delayed coincidence option. However in this GATE version, other parameter combinations can result in significant errors. PMID:25240897

Phase matching as a gate for photon entanglement

PubMed Central

Zheltikov, A. M.

2017-01-01

Phase matching is shown to provide a tunable gate that helps discriminate entangled states of light generated by four-wave mixing (FWM) in optical fibers against uncorrelated photons originating from Raman scattering. Two types of such gates are discussed. Phase-matching gates of the first type are possible in the normal dispersion regime, where FWM sidebands can be widely tuned by high-order dispersion management, enhancing the ratio of the entangled-photon output to the Raman noise. The photon-entanglement gates of the second type are created by dual-pump cross-phase-modulation-induced FWM sideband generation and can be tuned by group-velocity mismatch of the pump fields. PMID:28703217

93-133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology

NASA Astrophysics Data System (ADS)

Sato, Masaru; Shiba, Shoichi; Matsumura, Hiroshi; Takahashi, Tsuyoshi; Nakasha, Yasuhiro; Suzuki, Toshihide; Hara, Naoki

2013-04-01

In this study, we developed a new type of high-frequency amplifier topology using 75-nm-gate-length InP-based high-electron-mobility transistors (InP HEMTs). To enhance the gain for a wide frequency range, a common-source common-gate hybrid amplifier topology was proposed. A transformer-based balun placed at the input of the amplifier generates differential signals, which are fed to the gate and source terminals of the transistor. The amplified signal is outputted at the drain node. The simulation results show that the hybrid topology exhibits a higher gain from 90 to 140 GHz than that of the conventional common-source or common-gate amplifier. The two-stage amplifier fabricated using the topology exhibits a small signal gain of 12 dB and a 3-dB bandwidth of 40 GHz (93-133 GHz), which is the largest bandwidth and the second highest gain reported among those of published 120-GHz-band amplifiers. In addition, the measured noise figure was 5 dB from 90 to 100 GHz.

Isolated Attosecond Pulse Generation without the Need to Stabilize the Carrier-Envelope Phase of Driving Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gilbertson, Steve; Khan, Sabih D.; Wu Yi

2010-08-27

Single isolated attosecond pulses can be extracted from a pulse train with an ultrafast gate in the generation target. By setting the gate width sufficiently narrow with the generalized double optical gating, we demonstrate that single isolated attosecond pulses can be generated with any arbitrary carrier-envelope phase value of the driving laser. The carrier-envelope phase only affects the photon flux, not the pulse duration or contrast. Our results show that isolated attosecond pulses can be generated using carrier-envelope phase unstabilized 23 fs pulses directly from chirped pulse amplifiers.

Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

DOEpatents

McEwan, Thomas E.

1998-01-01

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings.

Short range micro-power impulse radar with high resolution swept range gate with damped transmit and receive cavities

DOEpatents

McEwan, T.E.

1998-06-30

A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with atypical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Uses of the invention include a replacement of ultrasound devices for fluid level sensing, automotive radar, such as cruise control and parking assistance, hidden object location, such as stud and rebar finding. Also, this technology can be used when positioned over a highway lane to collect vehicle count and speed data for traffic control. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. 20 figs.

Efficient Z gates for quantum computing

NASA Astrophysics Data System (ADS)

McKay, David C.; Wood, Christopher J.; Sheldon, Sarah; Chow, Jerry M.; Gambetta, Jay M.

2017-08-01

For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z gates, which, combined with two Xπ /2 gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse-shaping techniques such as derivative removal by adiabatic gate (DRAG). We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z gates to correct rotation errors realizes a 13.3 ns Xπ /2 gate characterized by low error [1.95 (3 ) ×10-4] and low leakage [3.1 (6 ) ×10-6] . Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders of magnitude smaller than pulse errors due to decoherence.

Pulsed phase locked loop strain monitor

NASA Technical Reports Server (NTRS)

Froggatt, Mark E. (Inventor)

1995-01-01

A pulse phase locked loop system according to the present invention is described. A frequency generator such as a voltage controlled oscillator (VCO) generates an output signal and a reference signal having a frequency equal to that of the output signal. A transmitting gate gates the output frequency signal and this gated signal drives a transmitting transducer which transmits an acoustic wave through a material. A sample/hold samples a signal indicative of the transmitted wave which is received by a receiving transducer. Divide-by-n counters control these gating and sampling functions in response to the reference signal of the frequency generator. Specifically, the output signal is gated at a rate of F/h, wherein F is the frequency of the output signal and h is an integer; and the received signal is sampled at a delay of F/n wherein n is an integer.

Ultra-narrow pulse generator with precision-adjustable pulse width

NASA Astrophysics Data System (ADS)

Fu, Zaiming; Liu, Hanglin

2018-05-01

In this paper, a novel ultra-narrow pulse generation approach is proposed. It is based on the decomposition and synthesis of pulse edges. Through controlling their relative delay, an ultra-narrow pulse could be generated. By employing field programmable gate array digital synthesis technology, the implemented pulse generator is with programmable ability. The amplitude of pulse signals is controlled by the radio frequency amplifiers and bias tees, and high precision can be achieved. More importantly, the proposed approach can break through the limitation of device's propagation delay and optimize the resolution and the accuracy of the pulse width significantly. The implemented pulse generator has two channels, whose minimum pulse width, frequency range, and amplitude range are 100 ps, 15 MHz-1.5 GHz, and 0.1 Vpp-1.8 Vpp, respectively. Both resolution of pulse width and channel delay are 1 ps, and amplitude resolution is 10 mVpp.

Towards component-based validation of GATE: aspects of the coincidence processor.

PubMed

Moraes, Eder R; Poon, Jonathan K; Balakrishnan, Karthikayan; Wang, Wenli; Badawi, Ramsey D

2015-02-01

GATE is public domain software widely used for Monte Carlo simulation in emission tomography. Validations of GATE have primarily been performed on a whole-system basis, leaving the possibility that errors in one sub-system may be offset by errors in others. We assess the accuracy of the GATE PET coincidence generation sub-system in isolation, focusing on the options most closely modeling the majority of commercially available scanners. Independent coincidence generators were coded by teams at Toshiba Medical Research Unit (TMRU) and UC Davis. A model similar to the Siemens mCT scanner was created in GATE. Annihilation photons interacting with the detectors were recorded. Coincidences were generated using GATE, TMRU and UC Davis code and results compared to "ground truth" obtained from the history of the photon interactions. GATE was tested twice, once with every qualified single event opening a time window and initiating a coincidence check (the "multiple window method"), and once where a time window is opened and a coincidence check initiated only by the first single event to occur after the end of the prior time window (the "single window method"). True, scattered and random coincidences were compared. Noise equivalent count rates were also computed and compared. The TMRU and UC Davis coincidence generators agree well with ground truth. With GATE, reasonable accuracy can be obtained if the single window method option is chosen and random coincidences are estimated without use of the delayed coincidence option. However in this GATE version, other parameter combinations can result in significant errors. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Fast range estimation based on active range-gated imaging for coastal surveillance

NASA Astrophysics Data System (ADS)

Kong, Qingshan; Cao, Yinan; Wang, Xinwei; Tong, Youwan; Zhou, Yan; Liu, Yuliang

2012-11-01

Coastal surveillance is very important because it is useful for search and rescue, illegal immigration, or harbor security and so on. Furthermore, range estimation is critical for precisely detecting the target. Range-gated laser imaging sensor is suitable for high accuracy range especially in night and no moonlight. Generally, before detecting the target, it is necessary to change delay time till the target is captured. There are two operating mode for range-gated imaging sensor, one is passive imaging mode, and the other is gate viewing mode. Firstly, the sensor is passive mode, only capturing scenes by ICCD, once the object appears in the range of monitoring area, we can obtain the course range of the target according to the imaging geometry/projecting transform. Then, the sensor is gate viewing mode, applying micro second laser pulses and sensor gate width, we can get the range of targets by at least two continuous images with trapezoid-shaped range intensity profile. This technique enables super-resolution depth mapping with a reduction of imaging data processing. Based on the first step, we can calculate the rough value and quickly fix delay time which the target is detected. This technique has overcome the depth resolution limitation for 3D active imaging and enables super-resolution depth mapping with a reduction of imaging data processing. By the two steps, we can quickly obtain the distance between the object and sensor.

Single-photon three-qubit quantum logic using spatial light modulators.

PubMed

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

SU-F-T-479: Estimation of the Accuracy in Respiratory-Gated Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosawa, T; Miyakawa, S; Sato, M

Purpose: Irregular respiratory patterns affects dose outputs in respiratorygated radiotherapy and there is no commercially available quality assurance (QA) system for it. We designed and developed a patient specific QA system for respiratory-gated radiotherapy to estimate irradiated output. Methods: Our in-house QA system for gating was composed of a personal computer with the USB-FSIO electronic circuit connecting to the linear accelerator (ONCOR-K, Toshiba Medical Systems). The linac implements a respiratory gating system (AZ-733V, Anzai Medical). During the beam was on, 4.2 V square-wave pulses were continually sent to the system. Our system can receive and count the pulses. At first,more » our system and an oscilloscope were compared to check the performance of our system. Next, basic estimation models were generated when ionization-chamber measurements were performed in gating using regular sinusoidal wave patterns (2.0, 2.5, 4.0, 8.0, 15 sec/cycle). During gated irradiation with the regular patterns, the number of the pulses per one gating window was measured using our system. Correlation between the number of the pulses per one gating and dose per the gating window were assessed to generate the estimation model. Finally, two irregular respiratory patterns were created and the accuracy of the estimation was evaluated. Results: Compared to the oscilloscope, our system worked similarly. The basic models were generated with the accuracy within 0.1%. The results of the gated irradiations with two irregular respiratory patterns show good agreement within 0.4% estimation accuracy. Conclusion: Our developed system shows good estimation for even irregular respiration patterns. The system would be a useful tool to verify the output for respiratory-gated radiotherapy.« less

Radiation sensors based on the generation of mobile protons in organic dielectrics.

PubMed

Kapetanakis, Eleftherios; Douvas, Antonios M; Argitis, Panagiotis; Normand, Pascal

2013-06-26

A sensing scheme based on mobile protons generated by radiation, including ionizing radiation (IonR), in organic gate dielectrics is investigated for the development of metal-insulator-semiconductor (MIS)-type dosimeters. Application of an electric field to the gate dielectric moves the protons and thereby alters the flat band voltage (VFB) of the MIS device. The shift in the VFB is proportional to the IonR-generated protons and, therefore, to the IonR total dose. Triphenylsulfonium nonaflate (TPSNF) photoacid generator (PAG)-containing poly(methyl methacrylate) (PMMA) polymeric films was selected as radiation-sensitive gate dielectrics. The effects of UV (249 nm) and gamma (Co-60) irradiations on the high-frequency capacitance versus the gate voltage (C-VG) curves of the MIS devices were investigated for different total dose values. Systematic improvements in sensitivity can be accomplished by increasing the concentration of the TPSNF molecules embedded in the polymeric matrix.

Random Telegraph Signal-Like Fluctuation Created by Fowler-Nordheim Stress in Gate Induced Drain Leakage Current of the Saddle Type Dynamic Random Access Memory Cell Transistor

NASA Astrophysics Data System (ADS)

Kim, Heesang; Oh, Byoungchan; Kim, Kyungdo; Cha, Seon-Yong; Jeong, Jae-Goan; Hong, Sung-Joo; Lee, Jong-Ho; Park, Byung-Gook; Shin, Hyungcheol

2010-09-01

We generated traps inside gate oxide in gate-drain overlap region of recess channel type dynamic random access memory (DRAM) cell transistor through Fowler-Nordheim (FN) stress, and observed gate induced drain leakage (GIDL) current both in time domain and in frequency domain. It was found that the trap inside gate oxide could generate random telegraph signal (RTS)-like fluctuation in GIDL current. The characteristics of that fluctuation were similar to those of RTS-like fluctuation in GIDL current observed in the non-stressed device. This result shows the possibility that the trap causing variable retention time (VRT) in DRAM data retention time can be located inside gate oxide like channel RTS of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Simulation of temperature dependent dielectric breakdown in n{sup +}-polySi/SiO{sub 2}/n-6H-SiC structures during Poole-Frenkel stress at positive gate bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samanta, Piyas, E-mail: piyas@vcfw.org; Mandal, Krishna C., E-mail: mandalk@cec.sc.edu

2016-08-14

We present for the first time a thorough investigation of trapped-hole induced gate oxide deterioration and simulation results of time-dependent dielectric breakdown (TDDB) of thin (7–25 nm) silicon dioxide (SiO{sub 2}) films thermally grown on (0 0 0 1) silicon (Si) face of n-type 6H-silicon carbide (n-6H-SiC). Gate oxide reliability was studied during both constant voltage and current stress with positive bias on the degenerately doped n-type poly-crystalline silicon (n{sup +}-polySi) gate at a wide range of temperatures between 27 and 225 °C. The gate leakage current was identified as the Poole-Frenkel (PF) emission of electrons trapped at an energy 0.92 eV belowmore » the SiO{sub 2} conduction band. Holes were generated in the n{sup +}-polySi anode material as well as in the oxide bulk via band-to-band ionization depending on the film thickness t{sub ox} and the energy of the hot-electrons (emitted via PF mechanism) during their transport through oxide films at oxide electric fields E{sub ox} ranging from 5 to 10 MV/cm. Our simulated time-to-breakdown (t{sub BD}) results are in excellent agreement with those obtained from time consuming TDDB measurements. It is observed that irrespective of stress temperatures, the t{sub BD} values estimated in the field range between 5 and 9 MV/cm better fit to reciprocal field (1/E) model for the thickness range studied here. Furthermore, for a 10 year projected device lifetime, a good reliability margin of safe operating field from 8.5 to 7.5 MV/cm for 7 nm and 8.1 to 6.9 MV/cm for 25 nm thick SiO{sub 2} was observed between 27 and 225 °C.« less

SU-E-J-169: The Dosimetric and Temporal Effects of Respiratory-Gated Radiation Therapy in Lung Cancer Patients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rouabhi, O; Gross, B; Xia, J

2015-06-15

Purpose: To evaluate the dosimetric and temporal effects of high dose rate treatment mode for respiratory-gated radiation therapy in lung cancer patients. Methods: Treatment plans from five lung cancer patients (3 nongated (Group 1), 2 gated at 80EX-80IN (Group 2)) were retrospectively evaluated. The maximum tumor motions range from 6–12 mm. Using the same planning criteria, four new treatment plans, corresponding to four gating windows (20EX–20IN, 40EX–40IN, 60EX–60IN, and 80EX–80IN), were generated for each patient. Mean tumor dose (MTD), mean lung dose (MLD), and lung V20 were used to assess the dosimetric effects. A MATLAB algorithm was developed to computemore » treatment time by considering gantry rotation time, time to position collimator leaves, dose delivery time (scaled relative to the gating window), and communication overhead. Treatment delivery time for each plan was estimated using a 500 MU/min dose rate for the original plans and a 1500 MU/min dose rate for the gated plans. Results: Differences in MTD were less than 1Gy across plans for all five patients. MLD and lung V20 were on average reduced between −16.1% to −6.0% and −20.0% to −7.2%, respectively for non-gated plans when compared with the corresponding gated plans, and between − 5.8% to −4.2% and −7.0% to −5.4%, respectively for plans originally gated at 80EX–80IN when compared with the corresponding 20EX-20IN to 60EX– 60IN gated plans. Treatment delivery times of gated plans using high dose rate were reduced on average between −19.7% (−1.9min) to −27.2% (−2.7min) for originally non-gated plans and −15.6% (−0.9min) to −20.3% (−1.2min) for originally 80EX-80IN gated plans. Conclusion: Respiratory-gated radiation therapy in lung cancer patients can reduce lung toxicity, while maintaining tumor dose. Using a gated high-dose-rate treatment, delivery time comparable to non-gated normal-dose-rate treatment can be achieved. This research is supported by Siemens Medical Solutions USA, Inc.« less

Improved Range Estimation Model for Three-Dimensional (3D) Range Gated Reconstruction

PubMed Central

Chua, Sing Yee; Guo, Ningqun; Tan, Ching Seong; Wang, Xin

2017-01-01

Accuracy is an important measure of system performance and remains a challenge in 3D range gated reconstruction despite the advancement in laser and sensor technology. The weighted average model that is commonly used for range estimation is heavily influenced by the intensity variation due to various factors. Accuracy improvement in term of range estimation is therefore important to fully optimise the system performance. In this paper, a 3D range gated reconstruction model is derived based on the operating principles of range gated imaging and time slicing reconstruction, fundamental of radiant energy, Laser Detection And Ranging (LADAR), and Bidirectional Reflection Distribution Function (BRDF). Accordingly, a new range estimation model is proposed to alleviate the effects induced by distance, target reflection, and range distortion. From the experimental results, the proposed model outperforms the conventional weighted average model to improve the range estimation for better 3D reconstruction. The outcome demonstrated is of interest to various laser ranging applications and can be a reference for future works. PMID:28872589

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

NOTE: Pre-clinical evaluation of respiratory-gated delivery of volumetric modulated arc therapy with RapidArc

NASA Astrophysics Data System (ADS)

Nicolini, Giorgia; Vanetti, Eugenio; Clivio, Alessandro; Fogliata, Antonella; Cozzi, Luca

2010-06-01

A study was carried out to evaluate the possibility of delivering volumetric modulated arc therapy with the RapidArc technology under respiratory-gated conditions. The experiments were performed in the framework of a non-clinically released environment. Plans of six patients, all realized for a single arc, were used for the experiments. The Real-time Position Management™ (RPM) respiratory gating system from Varian was used to generate gate-open signals of different durations. Arcs were delivered applying the different gates creating sequences of beam-hold/beam-on during the dose delivery: the average number of interruptions for a single arc ranged from 0 to 45. Dose prescription was set to 2 Gy and different gate-open periods of 30, 15 and 5 s to keep gantry speed constant at maximum. 5 Gy and 15 Gy doses were then applied to gate-open signals of 5 and 8 s, respectively, to mimic the most challenging conditions of slow gantry rotation and high-frequency interruptions. The 5 and 15 Gy experiments represent dose conditions of clinical interest for stereotactic treatments. For each patient and gating condition, pre-treatment 2D verification measurements were performed using the PTW-729 array in conjunction with the Octavius phantom (PTW, Freiburg); measurements were performed on different days (one per patient, with the complete setup of phantom and detectors every time), while each gating experiment was repeated seven consecutive times for reproducibility (without a new setup of the measurement equipment). Measurements were compared with dose calculations in the treatment planning system (performed without any gating) to appraise the dosimetric impact of the presence of gating and the eventual dependence from the number of interruptions during a single arc. Analysis of machine-registered log files in terms of average deviations between actual and expected positions (from automatic measurements every 50 ms) resulted in mean ΔMU (monitor units) <0.02% for all gating conditions. Δ(Gantry angle) = 0.38 ± 0.01° for 2 Gy (all gate periods), 0.24 ± 0.01° for 5 Gy, and 0.10 ± 0.01° for 15 Gy deliveries. Average deviations for multileaf collimator (MLC) positions (root mean square over all 120 leaves) were 0.45 ± 0.01 mm for 2 Gy (all gate periods), 0.32 ± 0.01 mm for 5 Gy and 0.14 ± 0.01 mm for 15 Gy. Results in terms of dose measurements confirmed that the application of gating to RapidArc delivery does not affect the quality of the dose delivery. With criteria of ΔD = 3%, DTA = 3 mm, the gamma test was passing in a range of 99 to 100% of the measured points for most of the cases (with maximum number of interruptions of about 20 per arc) and from 97 to 98% for the extreme case of 15 Gy and 8 s gate-open signal (corresponding to almost 50 interruptions per arc). In conclusion, RapidArc delivery proved, in a pre-clinical phase and non-clinically released framework, to be reliable and dosimetrically accurate also when applied in conjunction with gating procedures.

Effects of Geometrical and Flow Rates on the Prediction of Bottom Pressure Coefficients of Tunnel Lift Gate of Dams

NASA Astrophysics Data System (ADS)

Ameen, Sheeraz; Taher, Taha; Ahmed, Thamir M.

2018-06-01

Hydrostatics and hydrodynamics forces are generated and applied on the vertical lift tunnel gates due to the influence of a wide range of dam operating conditions. One of the most important forces is the uplift force resulting from the jet flow issuing below the gate. This force is based mainly upon many hydraulic and geometrical parameters. In this work, the uplift force is studied in terms of bottom pressure coefficient. The investigation is made paying particular attention on the effects of various three discharges and three gate lip angles on values of bottom pressure coefficients in addition to four different tunnel longitudinal slopes whose impact has not been studied in many previous works. Hydraulic model is constructed in this work for the sake of measuring all parameters required for estimating the bottom pressure coefficients, which are all examined against gate openings. The results show that the bottom pressure coefficient is related to the said variables, however, its behaviour and values are not necessary regular with variance of studied variables. The values are seen more significantly related to the flow rates and for some extent to the slopes of tunnel. An attempt by using the nonlinear regression of Statistical package of social sciences (SPSS) is made to set equations relating bottom pressure coefficient with gate openings for several angles of gate lips. The obtained equations are shown in good agreement with the selected cases of experimental results. The results are applicable for design purposes for similar geometrical and flow parameters considered in this study.

ZIF-67 derived porous Co3O4 hollow nanopolyhedron functionalized solution-gated graphene transistors for simultaneous detection of glucose and uric acid in tears.

PubMed

Xiong, Can; Zhang, Tengfei; Kong, Weiyu; Zhang, Zhixiang; Qu, Hao; Chen, Wei; Wang, Yanbo; Luo, Linbao; Zheng, Lei

2018-03-15

Biomarkers in tears have attracted much attention in daily healthcare sensing and monitoring. Here, highly sensitive sensors for simultaneous detection of glucose and uric acid are successfully constructed based on solution-gated graphene transistors (SGGTs) with two separate Au gate electrodes, modified with GOx-CHIT and BSA-CHIT respectively. The sensitivity of the SGGT is dramatically improved by co-modifying the Au gate with ZIF-67 derived porous Co 3 O 4 hollow nanopolyhedrons. The sensing mechanism for glucose sensor is attributed to the reaction of H 2 O 2 generated by the oxidation of glucose near the gate, while the sensing mechanism for uric acid is due to the direct electro-oxidation of uric acid molecules on the gate. The optimized glucose and uric acid sensors show the detection limits both down to 100nM, far beyond the sensitivity required for non-invasive detection of glucose and uric acid in tears. The glucose and uric acid in real tear samples was quantitatively detected at 323.2 ± 16.1μM and 98.5 ± 16.3μM by using the functionalized SGGT device. Due to the low-cost, high-biocompatibility and easy-fabrication features of the ZIF-67 derived porous Co 3 O 4 hollow nanopolyhedron, they provide excellent electrocatalytic nanomaterials for enhancing sensitivity of SGGTs for a broad range of disease-related biomarkers. Copyright © 2017 Elsevier B.V. All rights reserved.

Stochastically gated local and occupation times of a Brownian particle

NASA Astrophysics Data System (ADS)

Bressloff, Paul C.

2017-01-01

We generalize the Feynman-Kac formula to analyze the local and occupation times of a Brownian particle moving in a stochastically gated one-dimensional domain. (i) The gated local time is defined as the amount of time spent by the particle in the neighborhood of a point in space where there is some target that only receives resources from (or detects) the particle when the gate is open; the target does not interfere with the motion of the Brownian particle. (ii) The gated occupation time is defined as the amount of time spent by the particle in the positive half of the real line, given that it can only cross the origin when a gate placed at the origin is open; in the closed state the particle is reflected. In both scenarios, the gate randomly switches between the open and closed states according to a two-state Markov process. We derive a stochastic, backward Fokker-Planck equation (FPE) for the moment-generating function of the two types of gated Brownian functional, given a particular realization of the stochastic gate, and analyze the resulting stochastic FPE using a moments method recently developed for diffusion processes in randomly switching environments. In particular, we obtain dynamical equations for the moment-generating function, averaged with respect to realizations of the stochastic gate.

RISE TIME DELAY DISCRIMINATOR

DOEpatents

Johnstone, C.W.

1959-09-29

A pulse-height discriminator for generating an output pulse when the accepted input pulse is approximately at its maximum value is described. A gating tube and a negative bias generator responsive to the derivative of the input pulse and means for impressing the output of the bias generator to at least one control electrode of the gating tube are included.

SU-E-T-163: Evaluation of Dose Distributions Recalculated with Per-Field Measurement Data Under the Condition of Respiratory Motion During IMRT for Liver Cancer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, J; Yoon, M; Nam, T

2014-06-01

Purpose: The dose distributions within the real volumes of tumor targets and critical organs during internal target volume-based intensity-modulated radiation therapy (ITV-IMRT) for liver cancer were recalculated by applying the effects of actual respiratory organ motion, and the dosimetric features were analyzed through comparison with gating IMRT (Gate-IMRT) plan results. Methods: The 4DCT data for 10 patients who had been treated with Gate-IMRT for liver cancer were selected to create ITV-IMRT plans. The ITV was created using MIM software, and a moving phantom was used to simulate respiratory motion. The period and range of respiratory motion were recorded in allmore » patients from 4DCT-generated movie data, and the same period and range were applied when operating the dynamic phantom to realize coincident respiratory conditions in each patient. The doses were recalculated with a 3 dose-volume histogram (3DVH) program based on the per-field data measured with a MapCHECK2 2-dimensional diode detector array and compared with the DVHs calculated for the Gate-IMRT plan. Results: Although a sufficient prescription dose covered the PTV during ITV-IMRT delivery, the dose homogeneity in the PTV was inferior to that with the Gate-IMRT plan. We confirmed that there were higher doses to the organs-at-risk (OARs) with ITV-IMRT, as expected when using an enlarged field, but the increased dose to the spinal cord was not significant and the increased doses to the liver and kidney could be considered as minor when the reinforced constraints were applied during IMRT plan optimization. Conclusion: Because Gate-IMRT cannot always be considered an ideal method with which to correct the respiratory motional effect, given the dosimetric variations in the gating system application and the increased treatment time, a prior analysis for optimal IMRT method selection should be performed while considering the patient's respiratory condition and IMRT plan results.« less

Impurity-generated non-Abelions

NASA Astrophysics Data System (ADS)

Simion, G.; Kazakov, A.; Rokhinson, L. P.; Wojtowicz, T.; Lyanda-Geller, Y. B.

2018-06-01

Two classes of topological superconductors and Majorana modes in condensed matter systems are known to date: one in which disorder induced by impurities strongly suppresses topological superconducting gap and is detrimental to Majorana modes, and another where Majorana fermions are protected by a disorder-robust topological superconductor gap. Observation and control of Majorana fermions and other non-Abelions often requires a symmetry of an underlying system leading to a gap in the single-particle or quasiparticle spectra. In semiconductor structures, impurities that provide charge carriers introduce states into the gap and enable conductance and proximity-induced superconductivity via the in-gap states. Thus a third class of topological superconductivity and Majorana modes emerges, in which topological superconductivity and Majorana fermions appear exclusively when impurities generate in-gap states. We show that impurity-enabled topological superconductivity is realized in a quantum Hall ferromagnet, when a helical domain wall is coupled to an s -wave superconductor. As an example of emergence of topological superconductivity in quantum Hall ferromagnets, we consider the integer quantum Hall effect in Mn-doped CdTe quantum wells. Recent experiments on transport through the quantum Hall ferromagnet domain wall in this system indicated a vital role of impurities in the conductance, but left unresolved the question whether impurities preclude generation of Majorana fermions and other non-Abelions in such systems in general. Here, solving a general quantum-mechanical problem of impurity bound states in a system of spin-orbit coupled Landau levels, we demonstrate that impurity-induced Majorana modes emerge at boundaries between topological and conventional superconducting states generated in a domain wall due to proximity to an s superconductor. We consider both short-range disorder and a smooth random potential. The phase diagram of the system is defined by characteristic disorder, gate voltage induced angular momentum splitting of impurity levels, and by a proximity superconducting gap. The phase diagram exhibits two ranges of gate voltage with conventional superconducting order separated by a gate voltage range with topological superconductivity. We show that electrostatic control of domain walls in an integer quantum Hall ferromagnet allows manipulation of Majorana fermions. Ferromagnetic transitions in the fractional quantum Hall regime may lead to the formation and electrostatic control of higher order non-Abelian excitations.

Field-programmable gate array-controlled sweep velocity-locked laser pulse generator

NASA Astrophysics Data System (ADS)

Chen, Zhen; Hefferman, Gerald; Wei, Tao

2017-05-01

A field-programmable gate array (FPGA)-controlled sweep velocity-locked laser pulse generator (SV-LLPG) design based on an all-digital phase-locked loop (ADPLL) is proposed. A distributed feedback laser with modulated injection current was used as a swept-frequency laser source. An open-loop predistortion modulation waveform was calibrated using a feedback iteration method to initially improve frequency sweep linearity. An ADPLL control system was then implemented using an FPGA to lock the output of a Mach-Zehnder interferometer that was directly proportional to laser sweep velocity to an on-board system clock. Using this system, linearly chirped laser pulses with a sweep bandwidth of 111.16 GHz were demonstrated. Further testing evaluating the sensing utility of the system was conducted. In this test, the SV-LLPG served as the swept laser source of an optical frequency-domain reflectometry system used to interrogate a subterahertz range fiber structure (sub-THz-FS) array. A static strain test was then conducted and linear sensor results were observed.

Pulse transmission transmitter including a higher order time derivate filter

DOEpatents

Dress, Jr., William B.; Smith, Stephen F.

2003-09-23

Systems and methods for pulse-transmission low-power communication modes are disclosed. A pulse transmission transmitter includes: a clock; a pseudorandom polynomial generator coupled to the clock, the pseudorandom polynomial generator having a polynomial load input; an exclusive-OR gate coupled to the pseudorandom polynomial generator, the exclusive-OR gate having a serial data input; a programmable delay circuit coupled to both the clock and the exclusive-OR gate; a pulse generator coupled to the programmable delay circuit; and a higher order time derivative filter coupled to the pulse generator. The systems and methods significantly reduce lower-frequency emissions from pulse transmission spread-spectrum communication modes, which reduces potentially harmful interference to existing radio frequency services and users and also simultaneously permit transmission of multiple data bits by utilizing specific pulse shapes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jermoumi, M; Cao, D; Housley, D

Purpose: In this study, we evaluated the performance of an Elekta linac in the delivery of gated radiotherapy. We examined whether the use of either a short gating window or a long beam hold impacts the accuracy of the delivery Methods: The performance of an Elekta linac in the delivery of gated radiotherapy was assessed using a 20cmX 20cm open field with the radiation delivered using a range of beam-on and beam-off time periods. Two SBRT plans were used to examine the accuracy of gated beam delivery for clinical treatment plans. For the SBRT cases, tests were performed for bothmore » free-breathing based gating and for gated delivery with a simulated breath-hold. A MatriXX 2D ion chamber array was used for data collection, and the gating accuracy was evaluated using gamma score. Results: For the 20cmX20cm open field, the gated beam delivery agreed closely with the non-gated delivery results. Discrepancies in the agreement, however, began to appear with a 5-to-1 ratio of the beam-off to beam-on. For these tight gating windows, each beam-on segment delivered a small number of monitor units. This finding was confirmed with dose distribution analysis from the delivery of the two VMAT plans where the gamma score(±1%,2%/1mm) showed passing rates in the range of 95% to 100% for gating windows of 25%, 38%, 50%, 63%, 75%, and 83%. Using a simulated sinusoidal breathing signal with a 4 second period, the gamma score of freebreathing gating and breath-hold gating deliveries were measured in the range of 95.7% to 100%. Conclusion: The results demonstrate that Elekta linacs can be used to accurately deliver respiratory gated treatments for both free-breathing and breath-hold patients. The accuracy of beams delivered in a gated delivery mode at low small MU proved higher than similar deliveries performed in a non-gated (manually interrupted) fashion.« less

Simple All-Microwave Entangling Gate for Fixed-Frequency Superconducting Qubits

NASA Astrophysics Data System (ADS)

Chow, Jerry M.; Córcoles, A. D.; Gambetta, Jay M.; Rigetti, Chad; Johnson, B. R.; Smolin, John A.; Rozen, J. R.; Keefe, George A.; Rothwell, Mary B.; Ketchen, Mark B.; Steffen, M.

2011-08-01

We demonstrate an all-microwave two-qubit gate on superconducting qubits which are fixed in frequency at optimal bias points. The gate requires no additional subcircuitry and is tunable via the amplitude of microwave irradiation on one qubit at the transition frequency of the other. We use the gate to generate entangled states with a maximal extracted concurrence of 0.88, and quantum process tomography reveals a gate fidelity of 81%.

Range gated strip proximity sensor

DOEpatents

McEwan, T.E.

1996-12-03

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

Range gated strip proximity sensor

DOEpatents

McEwan, Thomas E.

1996-01-01

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

Suitability of markerless EPID tracking for tumor position verification in gated radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serpa, Marco; University Clinic for Radiotherapy and Radio-Oncology, Landeskrankenhaus Salzburg, Paracelsus Medical University Clinics, 5020 Salzburg; Department of Physics and Astronomy, University of Canterbury, Christchurch 8140

2014-03-15

Purpose: To maximize the benefits of respiratory gated radiotherapy (RGRT) of lung tumors real-time verification of the tumor position is required. This work investigates the feasibility of markerless tracking of lung tumors during beam-on time in electronic portal imaging device (EPID) images of the MV therapeutic beam. Methods: EPID movies were acquired at ∼2 fps for seven lung cancer patients with tumor peak-to-peak motion ranges between 7.8 and 17.9 mm (mean: 13.7 mm) undergoing stereotactic body radiotherapy. The external breathing motion of the abdomen was synchronously measured. Both datasets were retrospectively analyzed inPortalTrack, an in-house developed tracking software. The authorsmore » define a three-step procedure to run the simulations: (1) gating window definition, (2) gated-beam delivery simulation, and (3) tumor tracking. First, an amplitude threshold level was set on the external signal, defining the onset of beam-on/-off signals. This information was then mapped onto a sequence of EPID images to generate stamps of beam-on/-hold periods throughout the EPID movies in PortalTrack, by obscuring the frames corresponding to beam-off times. Last, tumor motion in the superior-inferior direction was determined on portal images by the tracking algorithm during beam-on time. The residual motion inside the gating window as well as target coverage (TC) and the marginal target displacement (MTD) were used as measures to quantify tumor position variability. Results: Tumor position monitoring and estimation from beam's-eye-view images during RGRT was possible in 67% of the analyzed beams. For a reference gating window of 5 mm, deviations ranging from 2% to 86% (35% on average) were recorded between the reference and measured residual motion. TC (range: 62%–93%; mean: 77%) losses were correlated with false positives incidence rates resulting mostly from intra-/inter-beam baseline drifts, as well as sudden cycle-to-cycle fluctuations in exhale positions. Both phenomena can lead to considerable deviations (with MTD values up to a maximum of 7.8 mm) from the intended tumor position, and in turn may result in a marginal miss. The difference between tumor traces determined within the gating window against ground truth trajectory maps was 1.1 ± 0.7 mm on average (range: 0.4–2.3 mm). Conclusions: In this retrospective analysis of motion data, it is demonstrated that the system is capable of determining tumor positions in the plane perpendicular to the beam direction without the aid of fiducial markers, and may hence be suitable as an online verification tool in RGRT. It may be possible to use the tracking information to enable on-the-fly corrections to intra-/inter-beam variations by adapting the gating window by means of a robotic couch.« less

Ultra-wideband radar motion sensor

DOEpatents

McEwan, Thomas E.

1994-01-01

A motion sensor is based on ultra-wideband (UWB) radar. UWB radar range is determined by a pulse-echo interval. For motion detection, the sensors operate by staring at a fixed range and then sensing any change in the averaged radar reflectivity at that range. A sampling gate is opened at a fixed delay after the emission of a transmit pulse. The resultant sampling gate output is averaged over repeated pulses. Changes in the averaged sampling gate output represent changes in the radar reflectivity at a particular range, and thus motion.

Ultra-wideband radar motion sensor

DOEpatents

McEwan, T.E.

1994-11-01

A motion sensor is based on ultra-wideband (UWB) radar. UWB radar range is determined by a pulse-echo interval. For motion detection, the sensors operate by staring at a fixed range and then sensing any change in the averaged radar reflectivity at that range. A sampling gate is opened at a fixed delay after the emission of a transmit pulse. The resultant sampling gate output is averaged over repeated pulses. Changes in the averaged sampling gate output represent changes in the radar reflectivity at a particular range, and thus motion. 15 figs.

Structures of closed and open states of a voltage-gated sodium channel

PubMed Central

Lenaeus, Michael J.; Gamal El-Din, Tamer M.; Ramanadane, Karthik; Pomès, Régis; Zheng, Ning; Catterall, William A.

2017-01-01

Bacterial voltage-gated sodium channels (BacNavs) serve as models of their vertebrate counterparts. BacNavs contain conserved voltage-sensing and pore-forming domains, but they are homotetramers of four identical subunits, rather than pseudotetramers of four homologous domains. Here, we present structures of two NaVAb mutants that capture tightly closed and open states at a resolution of 2.8–3.2 Å. Introduction of two humanizing mutations in the S6 segment (NaVAb/FY: T206F and V213Y) generates a persistently closed form of the activation gate in which the intracellular ends of the four S6 segments are drawn tightly together to block ion permeation completely. This construct also revealed the complete structure of the four-helix bundle that forms the C-terminal domain. In contrast, truncation of the C-terminal 40 residues in NavAb/1–226 captures the activation gate in an open conformation, revealing the open state of a BacNav with intact voltage sensors. Comparing these structures illustrates the full range of motion of the activation gate, from closed with its orifice fully occluded to open with an orifice of ∼10 Å. Molecular dynamics and free-energy simulations confirm designation of NaVAb/1–226 as an open state that allows permeation of hydrated Na+, and these results also support a hydrophobic gating mechanism for control of ion permeation. These two structures allow completion of a closed–open–inactivated conformational cycle in a single voltage-gated sodium channel and give insight into the structural basis for state-dependent binding of sodium channel-blocking drugs. PMID:28348242

Simple all-microwave entangling gate for fixed-frequency superconducting qubits.

PubMed

Chow, Jerry M; Córcoles, A D; Gambetta, Jay M; Rigetti, Chad; Johnson, B R; Smolin, John A; Rozen, J R; Keefe, George A; Rothwell, Mary B; Ketchen, Mark B; Steffen, M

2011-08-19

We demonstrate an all-microwave two-qubit gate on superconducting qubits which are fixed in frequency at optimal bias points. The gate requires no additional subcircuitry and is tunable via the amplitude of microwave irradiation on one qubit at the transition frequency of the other. We use the gate to generate entangled states with a maximal extracted concurrence of 0.88, and quantum process tomography reveals a gate fidelity of 81%. © 2011 American Physical Society

3D super resolution range-gated imaging for canopy reconstruction and measurement

NASA Astrophysics Data System (ADS)

Huang, Hantao; Wang, Xinwei; Sun, Liang; Lei, Pingshun; Fan, Songtao; Zhou, Yan

2018-01-01

In this paper, we proposed a method of canopy reconstruction and measurement based on 3D super resolution range-gated imaging. In this method, high resolution 2D intensity images are grasped by active gate imaging, and 3D images of canopy are reconstructed by triangular-range-intensity correlation algorithm at the same time. A range-gated laser imaging system(RGLIS) is established based on 808 nm diode laser and gated intensified charge-coupled device (ICCD) camera with 1392´1040 pixels. The proof experiments have been performed for potted plants located 75m away and trees located 165m away. The experiments show it that can acquire more than 1 million points per frame, and 3D imaging has the spatial resolution about 0.3mm at the distance of 75m and the distance accuracy about 10 cm. This research is beneficial for high speed acquisition of canopy structure and non-destructive canopy measurement.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Usefulness of a new online patient-specific quality assurance system for respiratory-gated radiotherapy.

PubMed

Kurosawa, Tomoyuki; Tachibana, Hidenobu; Moriya, Shunsuke; Miyakawa, Shin; Nishio, Teiji; Sato, Masanori

2017-11-01

The accuracy of gated irradiation may decrease when treatment is performed with short "beam-on" times. Also, the dose is subject to variation between treatment sessions if the respiratory rate is irregular. We therefore evaluated the impact of the differences between gated and non-gated treatment on doses using a new online quality assurance (QA) system for respiratory-gated radiotherapy. We generated dose estimation models to associate dose and pulse information using a 0.6 cc Farmer chamber and our QA system. During gated irradiation with each of seven regular and irregular respiratory patterns, with the Farmer chamber readings as references, we evaluated our QA system's accuracy. We then used the QA system to assess the impact of respiratory patterns on dose distribution for three lung and three liver radiotherapy plans. Gated and non-gated plans were generated and compared. There was agreement within 1.7% between the ionization chamber and our system for several regular and irregular motion patterns. For dose distributions with measured errors, there were larger differences between gated and non-gated treatment for high-dose regions within the planned treatment volume (PTV). Compared with a non-gated plan, PTV D 95% for a gated plan decreased by -1.5% to -2.6%. Doses to organs at risk were similar with both plans. Our simple system estimated the radiation dose to the patient using only pulse information from the linac, even during irregular respiration. The quality of gated irradiation for each patient can be verified fraction by fraction. Copyright © 2017 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Wavelength-dependence of double optical gating for attosecond pulse generation

NASA Astrophysics Data System (ADS)

Tian, Jia; Li, Min; Yu, Ji-Zhou; Deng, Yong-Kai; Liu, Yun-Quan

2014-10-01

Both polarization gating (PG) and double optical gating (DOG) are productive methods to generate single attosecond (as) pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.

Effects of breathing variation on gating window internal target volume in respiratory gated radiation therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai Jing; McLawhorn, Robert; Read, Paul W.

Purpose: To investigate the effects of breathing variation on gating window internal target volume (ITV{sub GW}) in respiratory gated radiation therapy. Method and Materials: Two-dimensional dynamic MRI (dMRI) of lung motion was acquired in ten volunteers and eight lung cancer patients. Resorted dMRI using 4DCT acquisition method (RedCAM) was generated for selected subjects by simulating the image rebinning process. A dynamic software generated phantom (dSGP) was created by moving a solid circle (to mimic the ''tumor'') with dMRI-determined motion trajectories. The gating window internal target area (ITA{sub GW}, 2D counterpart of ITV{sub GW}) was determined from both RedCAM and dSGP/dMRI.more » Its area (A), major axis (L1), minor axis (L2), and similarity (S) were calculated and compared. Results: In the phantom study of 3 cm tumor, measurements of the ITA{sub GW} from dSGP (A=10.0{+-}1.3 cm{sup 2}, L1=3.8{+-}0.4 cm, and L2=3.3{+-}0.1 cm) are significantly (p<0.001) greater than those from RedCAM (A=8.5{+-}0.7 cm{sup 2}, L1=3.5{+-}0.2 cm, and L2=3.1{+-}0.1 cm). Similarly, the differences are significantly greater (p<0.001) for the 1 cm tumor (A=1.9{+-}0.5 cm{sup 2}, L1=1.9{+-}0.4 cm, and L2=1.3{+-}0.1 cm in dSGP; A=1.3{+-}0.1 cm{sup 2}, L1=1.5{+-}0.2 cm, and L2=1.1{+-}0.1 cm in RedCAM). In patient studies, measurements of the ITA{sub GW} from dMRI (A=15.5{+-}8.2 cm{sup 2}, L1=5.0{+-}1.1 cm, and L2=3.8{+-}1.2 cm) are also significantly greater (p<0.05) than those from RedCAM (A=13.2{+-}8.5 cm{sup 2}, L1=4.3{+-}1.4 cm, and L2=3.7{+-}1.2 cm). Similarities were 0.9{+-}0.1, 0.8{+-}0.1, and 0.8{+-}0.1 in the 3 cm tumor phantom, 1 cm tumor phantom, and patient studies, respectively. Conclusion: ITV{sub GW} can be underestimated by 4DCT due to breathing variations. An additional margin may be needed to account for this potential error in generating a PTV{sub GW}. Cautions need to be taken when generating ITV{sub GW} from 4DCT in respiratory gated radiation therapy, especially for small tumors (<3 cm) with a large motion range (>1 cm).« less

Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials

PubMed Central

Yu, Woo Jong; Liu, Yuan; Zhou, Hailong; Yin, Anxiang; Li, Zheng; Huang, Yu

2014-01-01

Layered materials of graphene and MoS2, for example, have recently emerged as an exciting material system for future electronics and optoelectronics. Vertical integration of layered materials can enable the design of novel electronic and photonic devices. Here, we report highly efficient photocurrent generation from vertical heterostructures of layered materials. We show that vertically stacked graphene–MoS2–graphene and graphene–MoS2–metal junctions can be created with a broad junction area for efficient photon harvesting. The weak electrostatic screening effect of graphene allows the integration of single or dual gates under and/or above the vertical heterostructure to tune the band slope and photocurrent generation. We demonstrate that the amplitude and polarity of the photocurrent in the gated vertical heterostructures can be readily modulated by the electric field of an external gate to achieve a maximum external quantum efficiency of 55% and internal quantum efficiency up to 85%. Our study establishes a method to control photocarrier generation, separation and transport processes using an external electric field. PMID:24162001

1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation

NASA Astrophysics Data System (ADS)

Klehr, A.; Liero, A.; Wenzel, H.; Bugge, F.; Brox, O.; Fricke, J.; Ressel, P.; Knigge, A.; Heinrich, W.; Tränkle, G.

2017-02-01

A new compact 1030 nm picosecond light source which can be switched between pulse gating and mode locking operation is presented. It consists of a multi-section distributed Bragg reflector (DBR) laser, an ultrafast multisection optical gate and a flared power amplifier (PA), mounted together with high frequency electronics and optical elements on a 5×4 cm micro bench. The master oscillator (MO) is a 10 mm long ridge wave-guide (RW) laser consisting of 200 μm long saturable absorber, 1500 μm long gain, 8000 μm long cavity, 200 μm long DBR and 100 μm long monitor sections. The 2 mm long optical gate consisting of several RW sections is monolithically integrated with the 4 mm long gain-guided tapered amplifier on a single chip. The light source can be switched between pulse gating and passive mode locking operation. For pulse gating all sections of the MO (except of the DBR and monitor sections) are forward biased and driven by a constant current. By injecting electrical pulses into one section of the optical gate the CW beam emitted by the MO is converted into a train of optical pulses with adjustable widths between 250 ps and 1000 ps. Peak powers of 20 W and spectral linewidths in the MHz range are achieved. Shorter pulses with widths between 4 ps and 15 ps and peak powers up to 50 W but larger spectral widths of about 300 pm are generated by mode locking where the saturable absorber section of the MO is reversed biased. The repetition rate of 4.2 GHz of the pulse train emitted by the MO can be reduced to values between 1 kHz and 100 MHz by utilizing the optical gate as pulse picker. The pulse-to-pulse distance can be controlled by an external trigger source.

Quantum logic gates based on ballistic transport in graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dragoman, Daniela; Academy of Romanian Scientists, Splaiul Independentei 54, 050094 Bucharest; Dragoman, Mircea, E-mail: mircea.dragoman@imt.ro

2016-03-07

The paper presents various configurations for the implementation of graphene-based Hadamard, C-phase, controlled-NOT, and Toffoli gates working at room temperature. These logic gates, essential for any quantum computing algorithm, involve ballistic graphene devices for qubit generation and processing and can be fabricated using existing nanolithographical techniques. All quantum gate configurations are based on the very large mean-free-paths of carriers in graphene at room temperature.

Internal dosimetry with the Monte Carlo code GATE: validation using the ICRP/ICRU female reference computational model

NASA Astrophysics Data System (ADS)

Villoing, Daphnée; Marcatili, Sara; Garcia, Marie-Paule; Bardiès, Manuel

2017-03-01

The purpose of this work was to validate GATE-based clinical scale absorbed dose calculations in nuclear medicine dosimetry. GATE (version 6.2) and MCNPX (version 2.7.a) were used to derive dosimetric parameters (absorbed fractions, specific absorbed fractions and S-values) for the reference female computational model proposed by the International Commission on Radiological Protection in ICRP report 110. Monoenergetic photons and electrons (from 50 keV to 2 MeV) and four isotopes currently used in nuclear medicine (fluorine-18, lutetium-177, iodine-131 and yttrium-90) were investigated. Absorbed fractions, specific absorbed fractions and S-values were generated with GATE and MCNPX for 12 regions of interest in the ICRP 110 female computational model, thereby leading to 144 source/target pair configurations. Relative differences between GATE and MCNPX obtained in specific configurations (self-irradiation or cross-irradiation) are presented. Relative differences in absorbed fractions, specific absorbed fractions or S-values are below 10%, and in most cases less than 5%. Dosimetric results generated with GATE for the 12 volumes of interest are available as supplemental data. GATE can be safely used for radiopharmaceutical dosimetry at the clinical scale. This makes GATE a viable option for Monte Carlo modelling of both imaging and absorbed dose in nuclear medicine.

SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, X; Cao, D; Housley, D

2014-06-01

Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-movingmore » platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.« less

Ku-band high efficiency GaAs MMIC power amplifiers

NASA Technical Reports Server (NTRS)

Tserng, H. Q.; Witkowski, L. C.; Wurtele, M.; Saunier, Paul

1988-01-01

The development of Ku-band high efficiency GaAs MMIC power amplifiers is examined. Three amplifier modules operating over the 13 to 15 GHz frequency range are to be developed. The first MMIC is a 1 W variable power amplifier (VPA) with 35 percent efficiency. On-chip digital gain control is to be provided. The second MMIC is a medium power amplifier (MPA) with an output power goal of 1 W and 40 percent power-added efficiency. The third MMIC is a high power amplifier (HPA) with 4 W output power goal and 40 percent power-added efficiency. An output power of 0.36 W/mm with 49 percent efficiency was obtained on an ion implanted single gate MESFET at 15 GHz. On a dual gate MESFET, an output power of 0.42 W/mm with 27 percent efficiency was obtained. A mask set was designed that includes single stage, two stage, and three stage single gate amplifiers. A single stage 600 micron amplifier produced 0.4 W/mm output power with 40 percent efficiency at 14 GHz. A four stage dual gate amplifier generated 500 mW of output power with 20 dB gain at 17 GHz. A four-bit digital-to-analog converter was designed and fabricated which has an output swing of -3 V to +/- 1 V.

TH-CD-207A-04: Optimized Respiratory Gating for Abnormal Breathers in Pancreatic SBRT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, W; Miften, M; Schefter, T

Purpose: Pancreatic SBRT is uniquely challenging due to both the erratic/unstable motion of the pancreas and the close proximity of the radiosensitive small bowel. Respiratory gating can mitigate this effect, but the irregularity of motion severely affects traditional phase-based gating. The purpose of this study was to analyze real-time motion data of pancreatic tumors to optimize the efficacy and accuracy of respiratory gating, with the overall goal of enabling dose escalated pancreatic SBRT. Methods: Fifteen pancreatic SBRT patients received 30–33 Gy in 5 fractions on a Varian TrueBeam STx unit. Abdominal compression was used to reduce the amplitude of tumormore » motion, and daily cone-beam computed tomography (CBCT) scans were acquired prior to each treatment for target localization purposes. For this study, breathing data (phase and amplitude) were collected during each CBCT scan using Varian’s Real-Time Position Management system. An in-house template matching technique was used to track the superior-inferior motion of implanted fiducial markers in CBCT projection images. Using tumor motion and breathing data, phase-based or amplitude-based respiratory gating was simulated for all 75 fractions, targeting either end-exhalation or end-inhalation phases of breathing. Results: For the average patient, gating at end-exhalation offered the best reductions in effective motion for equal duty cycles. However, optimal central phase angle varied widely (range: 0–92%, mean±SD: 49±12%), and phase-based gating windows typically associated with end-exhalation (i.e., “30–70%”) were rarely ideal. Amplitude-based gating significantly outperformed phase-based gating, with average effective ranges for amplitude-based gating 25% lower than phase-based gating ranges (as much as 73% lower). Amplitude-based gating was consistently better suited to accommodate abnormal breathing patterns. For both phase-based and amplitude-based gating, end-exhalation provided significantly better results than end-inhalation. Conclusion: Amplitude-based gating reliably outperformed phase-based gating, and end-exhalation was more suitable than end-inhalation. These results will be used to guide future dose-escalation trials. Research funding provided by Varian Medical Systems to Miften and Jones.« less

A prospective evaluation of the repeatability of left ventricular ejection fraction measurement by gated SPECT.

PubMed

Kliner, Dustin; Wang, Li; Winger, Daniel; Follansbee, William P; Soman, Prem

2015-12-01

Gated single-photon emission computed tomography (SPECT) is widely used for myocardial perfusion imaging and provides an automated assessment of left ventricular ejection fraction (LVEF). We prospectively tested the repeatability of serial SPECT-derived LVEF. This information is essential in order to inform the interpretation of a change in LV function on serial testing. Consenting patients (n = 50) from among those referred for clinically indicated gated myocardial perfusion SPECT (MPs) were recruited. Following the clinical rest-stress study, patients were repositioned on the camera table for a second acquisition using identical parameters. Patient positioning, image acquisition and processing for the second scan were independently performed by a technologist blinded to the clinical scan. Quantitative LVEF was generated by Quantitative Gated SPECT and recorded as EF1 and EF2, respectively. Repeatability of serial results was assessed using the Bland-Altman method. The limits of repeatability and repeatability coefficients were generated to determine the maximum variation in LVEF that can be expected to result from test variability. Repeatability was tested across a broad range of LV systolic function and myocardial perfusion. The mean difference between EF1 and EF2 was 1.6% (EF units), with 95% limits of repeatability of +9.1% to -6.0% (repeatability coefficient 7.5%). Correlation between serial EF measurements was excellent (r = 0.9809). Similar results were obtained in subgroups based on normal or abnormal EF and myocardial perfusion. The largest repeatability coefficient of 8.1% was seen in patients with abnormal LV systolic function. When test protocol and acquisition parameters are kept constant, a difference of >8% EF units on serial MPs is indicative of a true change 95% of the time.

Calcium Signalling through Ligand-Gated Ion Channels such as P2X1 Receptors in the Platelet and other Non-Excitable Cells.

PubMed

Mahaut-Smith, Martyn P; Taylor, Kirk A; Evans, Richard J

2016-01-01

Ligand-gated ion channels on the cell surface are directly activated by the binding of an agonist to their extracellular domain and often referred to as ionotropic receptors. P2X receptors are ligand-gated non-selective cation channels with significant permeability to Ca(2+) whose principal physiological agonist is ATP. This chapter focuses on the mechanisms by which P2X1 receptors, a ubiquitously expressed member of the family of ATP-gated channels, can contribute to cellular responses in non-excitable cells. Much of the detailed information on the contribution of P2X1 to Ca(2+) signalling and downstream functional events has been derived from the platelet. The underlying primary P2X1-generated signalling event in non-excitable cells is principally due to Ca(2+) influx, although Na(+) entry will also occur along with membrane depolarization. P2X1 receptor stimulation can lead to additional Ca(2+) mobilization via a range of routes such as amplification of G-protein-coupled receptor-dependent Ca(2+) responses. This chapter also considers the mechanism by which cells generate extracellular ATP for autocrine or paracrine activation of P2X1 receptors. For example cytosolic ATP efflux can result from opening of pannexin anion-permeable channels or following damage to the cell membrane. Alternatively, ATP stored in specialised secretory vesicles can undergo quantal release via the process of exocytosis. Examples of physiological or pathophysiological roles of P2X1-dependent signalling in non-excitable cells are also discussed, such as thrombosis and immune responses.

Comparison of breathing gated CT images generated using a 5DCT technique and a commercial clinical protocol in a porcine model

PubMed Central

O’Connell, Dylan P.; Thomas, David H.; Dou, Tai H.; Lamb, James M.; Feingold, Franklin; Low, Daniel A.; Fuld, Matthew K.; Sieren, Jered P.; Sloan, Chelsea M.; Shirk, Melissa A.; Hoffman, Eric A.; Hofmann, Christian

2015-01-01

Purpose: To demonstrate that a “5DCT” technique which utilizes fast helical acquisition yields the same respiratory-gated images as a commercial technique for regular, mechanically produced breathing cycles. Methods: Respiratory-gated images of an anesthetized, mechanically ventilated pig were generated using a Siemens low-pitch helical protocol and 5DCT for a range of breathing rates and amplitudes and with standard and low dose imaging protocols. 5DCT reconstructions were independently evaluated by measuring the distances between tissue positions predicted by a 5D motion model and those measured using deformable registration, as well by reconstructing the originally acquired scans. Discrepancies between the 5DCT and commercial reconstructions were measured using landmark correspondences. Results: The mean distance between model predicted tissue positions and deformably registered tissue positions over the nine datasets was 0.65 ± 0.28 mm. Reconstructions of the original scans were on average accurate to 0.78 ± 0.57 mm. Mean landmark displacement between the commercial and 5DCT images was 1.76 ± 1.25 mm while the maximum lung tissue motion over the breathing cycle had a mean value of 27.2 ± 4.6 mm. An image composed of the average of 30 deformably registered images acquired with a low dose protocol had 6 HU image noise (single standard deviation) in the heart versus 31 HU for the commercial images. Conclusions: An end to end evaluation of the 5DCT technique was conducted through landmark based comparison to breathing gated images acquired with a commercial protocol under highly regular ventilation. The techniques were found to agree to within 2 mm for most respiratory phases and most points in the lung. PMID:26133604

Double optical gating

NASA Astrophysics Data System (ADS)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Pixel parallel localized driver design for a 128 x 256 pixel array 3D 1Gfps image sensor

NASA Astrophysics Data System (ADS)

Zhang, C.; Dao, V. T. S.; Etoh, T. G.; Charbon, E.

2017-02-01

In this paper, a 3D 1Gfps BSI image sensor is proposed, where 128 × 256 pixels are located in the top-tier chip and a 32 × 32 localized driver array in the bottom-tier chip. Pixels are designed with Multiple Collection Gates (MCG), which collects photons selectively with different collection gates being active at intervals of 1ns to achieve 1Gfps. For the drivers, a global PLL is designed, which consists of a ring oscillator with 6-stage current starved differential inverters, achieving a wide frequency tuning range from 40MHz to 360MHz (20ps rms jitter). The drivers are the replicas of the ring oscillator that operates within a PLL. Together with level shifters and XNOR gates, continuous 3.3V pulses are generated with desired pulse width, which is 1/12 of the PLL clock period. The driver array is activated by a START signal, which propagates through a highly balanced clock tree, to activate all the pixels at the same time with virtually negligible skew.

Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax

PubMed Central

Lyu, Hongming; Lu, Qi; Liu, Jinbiao; Wu, Xiaoming; Zhang, Jinyu; Li, Junfeng; Niu, Jiebin; Yu, Zhiping; Wu, Huaqiang; Qian, He

2016-01-01

In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors’ power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax = 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax 31–41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics. PMID:27775009

Compact, Intelligent, Digitally Controlled IGBT Gate Drivers for a PEBB-Based ILC Marx Modulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, M.N.; Burkhart, C.; Olsen, J.J.

2010-06-07

SLAC National Accelerator Laboratory has built and is currently operating a first generation prototype Marx klystron modulator to meet ILC specifications. Under development is a second generation prototype, aimed at improving overall performance, serviceability, and manufacturability as compared to its predecessor. It is designed around 32 cells, each operating at 3.75 kV and correcting for its own capacitor droop. Due to the uniqueness of this application, high voltage gate drivers needed to be developed for the main 6.5 kV and droop correction 1.7 kV IGBTs. The gate driver provides vital functions such as protection of the IGBT from over-voltage andmore » over-current, detection of gate-emitter open and short circuit conditions, and monitoring of IGBT degradation (based on collector-emitter saturation voltage). Gate drive control, diagnostic processing capabilities, and communication are digitally implemented using an FPGA. This paper details the design of the gate driver circuitry, component selection, and construction layout. In addition, experimental results are included to illustrate the effectiveness of the protection circuit.« less

Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process

PubMed Central

Yun, Myeong Gu; Kim, Ye Kyun; Ahn, Cheol Hyoun; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun; Kim, Yong-Hoon

2016-01-01

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density. PMID:27553518

Trapped-ion quantum logic gates based on oscillating magnetic fields.

PubMed

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

Domain-domain interactions determine the gating, permeation, pharmacology, and subunit modulation of the IKs ion channel.

PubMed

Zaydman, Mark A; Kasimova, Marina A; McFarland, Kelli; Beller, Zachary; Hou, Panpan; Kinser, Holly E; Liang, Hongwu; Zhang, Guohui; Shi, Jingyi; Tarek, Mounir; Cui, Jianmin

2014-12-23

Voltage-gated ion channels generate electrical currents that control muscle contraction, encode neuronal information, and trigger hormonal release. Tissue-specific expression of accessory (β) subunits causes these channels to generate currents with distinct properties. In the heart, KCNQ1 voltage-gated potassium channels coassemble with KCNE1 β-subunits to generate the IKs current (Barhanin et al., 1996; Sanguinetti et al., 1996), an important current for maintenance of stable heart rhythms. KCNE1 significantly modulates the gating, permeation, and pharmacology of KCNQ1 (Wrobel et al., 2012; Sun et al., 2012; Abbott, 2014). These changes are essential for the physiological role of IKs (Silva and Rudy, 2005); however, after 18 years of study, no coherent mechanism explaining how KCNE1 affects KCNQ1 has emerged. Here we provide evidence of such a mechanism, whereby, KCNE1 alters the state-dependent interactions that functionally couple the voltage-sensing domains (VSDs) to the pore.

Domain–domain interactions determine the gating, permeation, pharmacology, and subunit modulation of the IKs ion channel

PubMed Central

Zaydman, Mark A; Kasimova, Marina A; McFarland, Kelli; Beller, Zachary; Hou, Panpan; Kinser, Holly E; Liang, Hongwu; Zhang, Guohui; Shi, Jingyi; Tarek, Mounir; Cui, Jianmin

2014-01-01

Voltage-gated ion channels generate electrical currents that control muscle contraction, encode neuronal information, and trigger hormonal release. Tissue-specific expression of accessory (β) subunits causes these channels to generate currents with distinct properties. In the heart, KCNQ1 voltage-gated potassium channels coassemble with KCNE1 β-subunits to generate the IKs current (Barhanin et al., 1996; Sanguinetti et al., 1996), an important current for maintenance of stable heart rhythms. KCNE1 significantly modulates the gating, permeation, and pharmacology of KCNQ1 (Wrobel et al., 2012; Sun et al., 2012; Abbott, 2014). These changes are essential for the physiological role of IKs (Silva and Rudy, 2005); however, after 18 years of study, no coherent mechanism explaining how KCNE1 affects KCNQ1 has emerged. Here we provide evidence of such a mechanism, whereby, KCNE1 alters the state-dependent interactions that functionally couple the voltage-sensing domains (VSDs) to the pore. DOI: http://dx.doi.org/10.7554/eLife.03606.001 PMID:25535795

A comparison of two embedded programming techniques for high rep rate coherent Doppler lidars

NASA Astrophysics Data System (ADS)

Arend, Mark F.; Abdelazim, Sameh; Lopez, Miguel; Moshary, Fred

2013-05-01

Two FPGA embedded programming approaches are considered and compared for a 20 kHz pulse repetition rate coherent Doppler lidar system which acquires return signals at 400 Msamples/second and operates with signal to noise ratios as low as -20 dB. In the first approach, the acquired return signal is gated in time and the square modulus of the fast Fourier transform is accumulated for each of the range gates, producing a series of power spectra as a function of range. Wind speed decisions based on numerical estimators can then be made after transferring the range gated accumulated power spectra to a host computer, enabling the line of sight wind speed as a function of range gate to be calculated and stored for additional processing. In the second FPGA approach, a digital IQ demodulator and down sampler reduces the data flow requirements so that an autocorrelation matrix representing a pre-selected number of lags can be accumulated, allowing for the process of range gating to be explored on the host computer. The added feature of the second approach is that it allows for an additional capability to adjust the range gate period dynamically as the state of the atmospheric boundary layer (e.g. backscatter coefficient and stability condition) changes. A simple manual beam scanning technique is used to calculate the wind field vector which is graphically displayed on time-height cross section plots. A comparison to other observed and modeled information is presented suggesting the usefulness for the characterization of microscale meteorology.

Super-resolution depth information from a short-wave infrared laser gated-viewing system by using correlated double sampling

NASA Astrophysics Data System (ADS)

Göhler, Benjamin; Lutzmann, Peter

2017-10-01

Primarily, a laser gated-viewing (GV) system provides range-gated 2D images without any range resolution within the range gate. By combining two GV images with slightly different gate positions, 3D information within a part of the range gate can be obtained. The depth resolution is higher (super-resolution) than the minimal gate shift step size in a tomographic sequence of the scene. For a state-of-the-art system with a typical frame rate of 20 Hz, the time difference between the two required GV images is 50 ms which may be too long in a dynamic scenario with moving objects. Therefore, we have applied this approach to the reset and signal level images of a new short-wave infrared (SWIR) GV camera whose read-out integrated circuit supports correlated double sampling (CDS) actually intended for the reduction of kTC noise (reset noise). These images are extracted from only one single laser pulse with a marginal time difference in between. The SWIR GV camera consists of 640 x 512 avalanche photodiodes based on mercury cadmium telluride with a pixel pitch of 15 μm. A Q-switched, flash lamp pumped solid-state laser with 1.57 μm wavelength (OPO), 52 mJ pulse energy after beam shaping, 7 ns pulse length and 20 Hz pulse repetition frequency is used for flash illumination. In this paper, the experimental set-up is described and the operating principle of CDS is explained. The method of deriving super-resolution depth information from a GV system by using CDS is introduced and optimized. Further, the range accuracy is estimated from measured image data.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Computational Model of the Insect Pheromone Transduction Cascade

PubMed Central

Gu, Yuqiao; Lucas, Philippe; Rospars, Jean-Pierre

2009-01-01

A biophysical model of receptor potential generation in the male moth olfactory receptor neuron is presented. It takes into account all pre-effector processes—the translocation of pheromone molecules from air to sensillum lymph, their deactivation and interaction with the receptors, and the G-protein and effector enzyme activation—and focuses on the main post-effector processes. These processes involve the production and degradation of second messengers (IP3 and DAG), the opening and closing of a series of ionic channels (IP3-gated Ca2+ channel, DAG-gated cationic channel, Ca2+-gated Cl− channel, and Ca2+- and voltage-gated K+ channel), and Ca2+ extrusion mechanisms. The whole network is regulated by modulators (protein kinase C and Ca2+-calmodulin) that exert feedback inhibition on the effector and channels. The evolution in time of these linked chemical species and currents and the resulting membrane potentials in response to single pulse stimulation of various intensities were simulated. The unknown parameter values were fitted by comparison to the amplitude and temporal characteristics (rising and falling times) of the experimentally measured receptor potential at various pheromone doses. The model obtained captures the main features of the dose–response curves: the wide dynamic range of six decades with the same amplitudes as the experimental data, the short rising time, and the long falling time. It also reproduces the second messenger kinetics. It suggests that the two main types of depolarizing ionic channels play different roles at low and high pheromone concentrations; the DAG-gated cationic channel plays the major role for depolarization at low concentrations, and the Ca2+-gated Cl− channel plays the major role for depolarization at middle and high concentrations. Several testable predictions are proposed, and future developments are discussed. PMID:19300479

Erroneous cardiac ECG-gated PET list-mode trigger events can be retrospectively identified and replaced by an offline reprocessing approach: first results in rodents

NASA Astrophysics Data System (ADS)

Böning, Guido; Todica, Andrei; Vai, Alessandro; Lehner, Sebastian; Xiong, Guoming; Mille, Erik; Ilhan, Harun; la Fougère, Christian; Bartenstein, Peter; Hacker, Marcus

2013-11-01

The assessment of left ventricular function, wall motion and myocardial viability using electrocardiogram (ECG)-gated [18F]-FDG positron emission tomography (PET) is widely accepted in human and in preclinical small animal studies. The nonterminal and noninvasive approach permits repeated in vivo evaluations of the same animal, facilitating the assessment of temporal changes in disease or therapy response. Although well established, gated small animal PET studies can contain erroneous gating information, which may yield to blurred images and false estimation of functional parameters. In this work, we present quantitative and visual quality control (QC) methods to evaluate the accuracy of trigger events in PET list-mode and physiological data. Left ventricular functional analysis is performed to quantify the effect of gating errors on the end-systolic and end-diastolic volumes, and on the ejection fraction (EF). We aim to recover the cardiac functional parameters by the application of the commonly established heart rate filter approach using fixed ranges based on a standardized population. In addition, we propose a fully reprocessing approach which retrospectively replaces the gating information of the PET list-mode file with appropriate list-mode decoding and encoding software. The signal of a simultaneously acquired ECG is processed using standard MATLAB vector functions, which can be individually adapted to reliably detect the R-peaks. Finally, the new trigger events are inserted into the PET list-mode file. A population of 30 mice with various health statuses was analyzed and standard cardiac parameters such as mean heart rate (119 ms ± 11.8 ms) and mean heart rate variability (1.7 ms ± 3.4 ms) derived. These standard parameter ranges were taken into account in the QC methods to select a group of nine optimal gated and a group of eight sub-optimal gated [18F]-FDG PET scans of mice from our archive. From the list-mode files of the optimal gated group, we randomly deleted various fractions (5% to 60%) of contained trigger events to generate a corrupted group. The filter approach was capable to correct the corrupted group and yield functional parameters with no significant difference to the optimal gated group. We successfully demonstrated the potential of the fully reprocessing approach by applying it to the sub-optimal group, where the functional parameters were significantly improved after reprocessing (mean EF from 41% ± 16% to 60% ± 13%). When applied to the optimal gated group the fully reprocessing approach did not alter the functional parameters significantly (mean EF from 64% ± 8% to 64 ± 7%). This work presents methods to determine and quantify erroneous gating in small animal gated [18F]-FDG PET scans. We demonstrate the importance of a quality check for cardiac triggering contained in PET list-mode data and the benefit of optionally reprocessing the fully recorded physiological information to retrospectively modify or fully replace the cardiac triggering in PET list-mode data. We aim to provide a preliminary guideline of how to proceed in the presence of errors and demonstrate that offline reprocessing by filtering erroneous trigger events and retrospective gating by ECG processing is feasible. Future work will focus on the extension by additional QC methods, which may exploit the amplitude of trigger events and ECG signal by means of pattern recognition. Furthermore, we aim to transfer the proposed QC methods and the fully reprocessing approach to human myocardial PET/CT.

A high-resolution programmable Vernier delay generator based on carry chains in FPGA

NASA Astrophysics Data System (ADS)

Cui, Ke; Li, Xiangyu; Zhu, Rihong

2017-06-01

This paper presents an architecture of a high-resolution delay generator implemented in a single field programmable gate array chip by exploiting the method of utilizing dedicated carry chains. It serves as the core component in various physical instruments. The proposed delay generator contains the coarse delay step and the fine delay step to guarantee both large dynamic range and high resolution. The carry chains are organized in the Vernier delay loop style to fulfill the fine delay step with high precision and high linearity. The delay generator was implemented in the EP3SE110F1152I3 Stratix III device from Altera on a self-designed test board. Test results show that the obtained resolution is 38.6 ps, and the differential nonlinearity/integral nonlinearity is in the range of [-0.18 least significant bit (LSB), 0.24 LSB]/(-0.02 LSB, 0.01 LSB) under the nominal supply voltage of 1100 mV and environmental temperature of 2 0°C. The delay generator is rather efficient concerning resource cost, which uses only 668 look-up tables and 146 registers in total.

Fully industrialised single photon avalanche diodes

NASA Astrophysics Data System (ADS)

Pellegrini, S.; Rae, B.

2017-05-01

Single Photon Avalanche diodes (SPADs) were first realized more than five decades ago[1][1], and have now been industrialized for mass production in the 130 nm CMOS technology node by STMicroelectronics (STM). In this paper we present the latest STM SPAD with an excellent NIR photon detection probability (>5% at 850nm), a dark count rate median of 100 cps at room temperature and a low breakdown voltage of 14.2V. The dead time of the SPAD is approximately 25 ns, leading to a maximum count rate of 40 Mcps. Thanks to the 130 nm gate length of the CMOS technology used and the associated high digital gate density, complex digital signal processing can be implemented allowing fully integrated systems to be realized. The low bias required by the SPAD makes it possible for voltage generation to be achieved on-chip (e.g. charge pumped). We introduce our first generation time-of-flight system (VL6180) based on the STM SPAD technology, which is capable of ranging up to 60 cm in 60 ms. Ranging capabilities and accuracy are measured using a set of moving targets with reflectance of 5%, 17% and 88% in a fully automated test bed. To the best of our knowledge this was the first high volume SPAD-based device. To our knowledge this is the first time details of SPAD performance over production volumes and lifetime have been presented.

Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure

PubMed Central

Murapaka, C.; Sethi, P.; Goolaup, S.; Lew, W. S.

2016-01-01

An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated. PMID:26839036

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Method and Apparatus for Simultaneous Processing of Multiple Functions

NASA Technical Reports Server (NTRS)

Stoica, Adrian (Inventor); Andrei, Radu (Inventor)

2017-01-01

Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.

Method and Apparatus for Simultaneous Processing of Multiple Functions

NASA Technical Reports Server (NTRS)

Stoica, Adrian (Inventor); Andrei, Radu (Inventor); Zhu, David (Inventor); Mojarradi, Mohammad Mehdi (Inventor); Vo, Tuan A. (Inventor)

2015-01-01

Electronic logic gates that operate using N logic state levels, where N is greater than 2, and methods of operating such gates. The electronic logic gates operate according to truth tables. At least two input signals each having a logic state that can range over more than two logic states are provided to the logic gates. The logic gates each provide an output signal that can have one of N logic states. Examples of gates described include NAND/NAND gates having two inputs A and B and NAND/NAND gates having three inputs A, B, and C, where A, B and C can take any of four logic states. Systems using such gates are described, and their operation illustrated. Optical logic gates that operate using N logic state levels are also described.

Discharge ratings for tainter gates and roller gates at Lock and Dam No. 7 on the Mississippi River, La Crescent, Minnesota

USGS Publications Warehouse

Corsi, Steven R.; Schuler, J.G.

1995-01-01

Coefficients of discharge (Cgs) ranged fron 0.126 (hg = 1 foot) to 1.089 (hg = 10 feet) for tainter gates and from 0.050 (hg = 1 foot) to 0.302 (hg = 14 feet) for roller gates. Disch^ge was measured at three different tainter gates with the gates closed (hg = 0) to evaluate tH tainter-gate leakage-discharge relations. No measurable leakage was observed. The resulting equations can be used to compute discharge at Lock and Dam No. 7 for the tainter and re Her gates under normal flow conditions. Discharge rating tables for the tainter and roller gates are given with a headwater elevation of 639.00 feet normal pool elevation for selected tailwate" elevations and gate openings.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme

NASA Astrophysics Data System (ADS)

Oguri, Katsuya; Mashiko, Hiroki; Ogawa, Tatsuya; Hanada, Yasutaka; Nakano, Hidetoshi; Gotoh, Hideki

2018-04-01

We demonstrate the generation of ultrabroad bandwidth attosecond continua extending to sub-50-as duration in the extreme ultraviolet (EUV) region based on a 1.6-cycle Ti:sapphire laser pulse. The combination of the amplitude gating scheme with a sub-two-cycle driver pulse and the double optical gating scheme achieves the continuum generation with a bandwidth of 70 eV at the full width at half maximum near the peak photon energy of 140 eV, which supports a Fourier-transform-limited pulse duration as short as 32 as. The carrier-envelope-phase (CEP) dependence of the attosecond continua shows a single-peak structure originating from the half-cycle cut-off at appropriate CEP values, which strongly indicates the generation of a single burst of an isolated attosecond pulse. Our approach suggests a possibility for isolated sub-50-as pulse generation in the EUV region by compensating for the intrinsic attosecond chirp with a Zr filter.

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

NASA Technical Reports Server (NTRS)

Asenov, Asen; Saini, Subhash

2000-01-01

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor

NASA Astrophysics Data System (ADS)

Han, C. Y.; Qian, L. X.; Leung, C. H.; Che, C. M.; Lai, P. T.

2013-07-01

By including the generation-recombination process of charge carriers in conduction channel, a model for low-frequency noise in pentacene organic thin-film transistors (OTFTs) is proposed. In this model, the slope and magnitude of power spectral density for low-frequency noise are related to the traps in the gate dielectric and accumulation layer of the OTFT for the first time. The model can well fit the measured low-frequency noise data of pentacene OTFTs with HfO2 or HfLaO gate dielectric, which validates this model, thus providing an estimate on the densities of traps in the gate dielectric and accumulation layer. It is revealed that the traps in the accumulation layer are much more than those in the gate dielectric, and so dominate the low-frequency noise of pentacene OTFTs.

SU-C-210-03: Impact of Breathing Irregularities On Gated Treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schiuma, D; Arheit, M; Schmelzer, P

2015-06-15

Purpose: To evaluate the effect of breathing irregularities on target location in gated treatments using amplitude and phase gating. Methods: 111 breathing patterns acquired using RPM system were categorized based on period and amplitude STD as regular (STD period ≤ 0.5 s, STD amplitude ≤ 1.5 mm), medium (0.5 s < STD period ≤ 1 s, 1.5 mm < STD amplitude ≤ 3 mm) and irregular (STD period > 1 s, STD amplitude > 3 mm). One pattern representative of the average defined population was selected per category and corresponding target motion reproduced using Quasar Respiratory Motion Phantom. Phantom inmore » motion underwent 4D-CT scan with phase reconstruction. Gated window was defined at end of exhale and DRRs reconstructed in treatment planning at 40% (beam on) and 60% phase (beam off). Target location uncertainty was assessed by comparing gated kV triggered images continuously acquired at beam on/off on a True Beam 2.0 with corresponding DRRs. Results: Average target uncertainty with amplitude gating was in [0.4 – 1.9] mm range for the different scenarios with maximum STD of 1.2 mm for the irregular pattern. Average target uncertainty with phase gating was [1.1 – 2.2] mm for regular and medium patterns, while it increased to [3.6 – 9.6] mm for the irregular pattern. Live gated motion was stable with amplitude gating, while increasing with phase gating for the irregular pattern. Treatment duration range was [68 – 160] s with amplitude and [70 – 74] s with phase gating. Conclusion: Breathing irregularities were found to affect gated treatments only when using phase gating. For regular and medium patterns no significant difference was found between the two gating strategies. Amplitude gating ensured stable gated motion within the different patterns, thus reducing intra-fraction target location variability for the irregular pattern and resulting in longer treatment duration.« less

Universal quantum computation with temporal-mode bilayer square lattices

NASA Astrophysics Data System (ADS)

Alexander, Rafael N.; Yokoyama, Shota; Furusawa, Akira; Menicucci, Nicolas C.

2018-03-01

We propose an experimental design for universal continuous-variable quantum computation that incorporates recent innovations in linear-optics-based continuous-variable cluster state generation and cubic-phase gate teleportation. The first ingredient is a protocol for generating the bilayer-square-lattice cluster state (a universal resource state) with temporal modes of light. With this state, measurement-based implementation of Gaussian unitary gates requires only homodyne detection. Second, we describe a measurement device that implements an adaptive cubic-phase gate, up to a random phase-space displacement. It requires a two-step sequence of homodyne measurements and consumes a (non-Gaussian) cubic-phase state.

Enabling complex genetic circuits to respond to extrinsic environmental signals.

PubMed

Hoynes-O'Connor, Allison; Shopera, Tatenda; Hinman, Kristina; Creamer, John Philip; Moon, Tae Seok

2017-07-01

Genetic circuits have the potential to improve a broad range of metabolic engineering processes and address a variety of medical and environmental challenges. However, in order to engineer genetic circuits that can meet the needs of these real-world applications, genetic sensors that respond to relevant extrinsic and intrinsic signals must be implemented in complex genetic circuits. In this work, we construct the first AND and NAND gates that respond to temperature and pH, two signals that have relevance in a variety of real-world applications. A previously identified pH-responsive promoter and a temperature-responsive promoter were extracted from the E. coli genome, characterized, and modified to suit the needs of the genetic circuits. These promoters were combined with components of the type III secretion system in Salmonella typhimurium and used to construct a set of AND gates with up to 23-fold change. Next, an antisense RNA was integrated into the circuit architecture to invert the logic of the AND gate and generate a set of NAND gates with up to 1168-fold change. These circuits provide the first demonstration of complex pH- and temperature-responsive genetic circuits, and lay the groundwork for the use of similar circuits in real-world applications. Biotechnol. Bioeng. 2017;114: 1626-1631. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

A Rhizobium radiobacter Histidine Kinase Can Employ Both Boolean AND and OR Logic Gates to Initiate Pathogenesis.

PubMed

Fang, Fang; Lin, Yi-Han; Pierce, B Daniel; Lynn, David G

2015-10-12

The molecular logic gates that regulate gene circuits are necessarily intricate and highly regulated, particularly in the critical commitments necessary for pathogenesis. We now report simple AND and OR logic gates to be accessible within a single protein receptor. Pathogenesis by the bacterium Rhizobium radiobacter is mediated by a single histidine kinase, VirA, which processes multiple small molecule host signals (phenol and sugar). Mutagenesis analyses converged on a single signal integration node, and finer functional analyses revealed that a single residue could switch VirA from a functional AND logic gate to an OR gate where each of two signals activate independently. Host range preferences among natural strains of R. radiobacter correlate with these gate logic strategies. Although the precise mechanism for the signal integration node requires further analyses, long-range signal transmission through this histidine kinase can now be exploited for synthetic signaling circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Krasowski, Michael J.; Chen, Liang-Yu; Prokop, Norman F.

2009-01-01

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

Multi-element germanium detectors for synchrotron applications

NASA Astrophysics Data System (ADS)

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; Vernon, E.; Pinelli, D.; Dooryhee, E.; Ghose, S.; Caswell, T.; Siddons, D. P.; Miceli, A.; Baldwin, J.; Almer, J.; Okasinski, J.; Quaranta, O.; Woods, R.; Krings, T.; Stock, S.

2018-04-01

We have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. We will discuss the technical details of the systems, and present some of the results from them.

Efficient simulation of voxelized phantom in GATE with embedded SimSET multiple photon history generator.

PubMed

Lin, Hsin-Hon; Chuang, Keh-Shih; Lin, Yi-Hsing; Ni, Yu-Ching; Wu, Jay; Jan, Meei-Ling

2014-10-21

GEANT4 Application for Tomographic Emission (GATE) is a powerful Monte Carlo simulator that combines the advantages of the general-purpose GEANT4 simulation code and the specific software tool implementations dedicated to emission tomography. However, the detailed physical modelling of GEANT4 is highly computationally demanding, especially when tracking particles through voxelized phantoms. To circumvent the relatively slow simulation of voxelized phantoms in GATE, another efficient Monte Carlo code can be used to simulate photon interactions and transport inside a voxelized phantom. The simulation system for emission tomography (SimSET), a dedicated Monte Carlo code for PET/SPECT systems, is well-known for its efficiency in simulation of voxel-based objects. An efficient Monte Carlo workflow integrating GATE and SimSET for simulating pinhole SPECT has been proposed to improve voxelized phantom simulation. Although the workflow achieves a desirable increase in speed, it sacrifices the ability to simulate decaying radioactive sources such as non-pure positron emitters or multiple emission isotopes with complex decay schemes and lacks the modelling of time-dependent processes due to the inherent limitations of the SimSET photon history generator (PHG). Moreover, a large volume of disk storage is needed to store the huge temporal photon history file produced by SimSET that must be transported to GATE. In this work, we developed a multiple photon emission history generator (MPHG) based on SimSET/PHG to support a majority of the medically important positron emitters. We incorporated the new generator codes inside GATE to improve the simulation efficiency of voxelized phantoms in GATE, while eliminating the need for the temporal photon history file. The validation of this new code based on a MicroPET R4 system was conducted for (124)I and (18)F with mouse-like and rat-like phantoms. Comparison of GATE/MPHG with GATE/GEANT4 indicated there is a slight difference in energy spectra for energy below 50 keV due to the lack of x-ray simulation from (124)I decay in the new code. The spatial resolution, scatter fraction and count rate performance are in good agreement between the two codes. For the case studies of (18)F-NaF ((124)I-IAZG) using MOBY phantom with 1  ×  1 × 1 mm(3) voxel sizes, the results show that GATE/MPHG can achieve acceleration factors of approximately 3.1 × (4.5 ×), 6.5 × (10.7 ×) and 9.5 × (31.0 ×) compared with GATE using the regular navigation method, the compressed voxel method and the parameterized tracking technique, respectively. In conclusion, the implementation of MPHG in GATE allows for improved efficiency of voxelized phantom simulations and is suitable for studying clinical and preclinical imaging.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

PubMed

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

NASA Astrophysics Data System (ADS)

Li, Ying; Niu, Guofu; Cressler, J. D.; Patel, J.; Marshall, C. J.; Marshall, P. W.; Kim, H. S.; Reed, R. A.; Palmer, M. J.

2001-12-01

We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear I/sub D/-V/sub GS/ characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature.

Universal quantum gate set approaching fault-tolerant thresholds with superconducting qubits.

PubMed

Chow, Jerry M; Gambetta, Jay M; Córcoles, A D; Merkel, Seth T; Smolin, John A; Rigetti, Chad; Poletto, S; Keefe, George A; Rothwell, Mary B; Rozen, J R; Ketchen, Mark B; Steffen, M

2012-08-10

We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, including those for Clifford group generators, single-qubit π/4 and π/8 rotations, and a two-qubit controlled-not, exceed 95% (98%), without (with) subtracting state preparation and measurement errors. Furthermore, we introduce a process map representation in the Pauli basis which is visually efficient and informative. This high-fidelity gate set serves as a critical building block towards scalable architectures of superconducting qubits for error correction schemes and pushes up on the known limits of quantum gate characterization.

Gate-Controllable Magneto-optic Kerr Effect in Layered Collinear Antiferromagnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sivadas, Nikhil; Okamoto, Satoshi; Xiao, Di

2016-12-23

In this paper, using symmetry arguments and a tight-binding model, we show that for layered collinear antiferromagnets, magneto-optic effects can be generated and manipulated by controlling crystal symmetries through a gate voltage. This provides a promising route for electric field manipulation of the magneto-optic effects without modifying the underlying magnetic structure. We further demonstrate the gate control of the magneto-optic Kerr effect (MOKE) in bilayer MnPSe 3 using first-principles calculations. Finally, the field-induced inversion symmetry breaking effect leads to gate-controllable MOKE, whose direction of rotation can be switched by the reversal of the gate voltage.

Deterministic nonlinear phase gates induced by a single qubit

NASA Astrophysics Data System (ADS)

Park, Kimin; Marek, Petr; Filip, Radim

2018-05-01

We propose deterministic realizations of nonlinear phase gates by repeating a finite sequence of non-commuting Rabi interactions between a harmonic oscillator and only a single two-level ancillary qubit. We show explicitly that the key nonclassical features of the ideal cubic phase gate and the quartic phase gate are generated in the harmonic oscillator faithfully by our method. We numerically analyzed the performance of our scheme under realistic imperfections of the oscillator and the two-level system. The methodology is extended further to higher-order nonlinear phase gates. This theoretical proposal completes the set of operations required for continuous-variable quantum computation.

Universal Quantum Gate Set Approaching Fault-Tolerant Thresholds with Superconducting Qubits

NASA Astrophysics Data System (ADS)

Chow, Jerry M.; Gambetta, Jay M.; Córcoles, A. D.; Merkel, Seth T.; Smolin, John A.; Rigetti, Chad; Poletto, S.; Keefe, George A.; Rothwell, Mary B.; Rozen, J. R.; Ketchen, Mark B.; Steffen, M.

2012-08-01

We use quantum process tomography to characterize a full universal set of all-microwave gates on two superconducting single-frequency single-junction transmon qubits. All extracted gate fidelities, including those for Clifford group generators, single-qubit π/4 and π/8 rotations, and a two-qubit controlled-not, exceed 95% (98%), without (with) subtracting state preparation and measurement errors. Furthermore, we introduce a process map representation in the Pauli basis which is visually efficient and informative. This high-fidelity gate set serves as a critical building block towards scalable architectures of superconducting qubits for error correction schemes and pushes up on the known limits of quantum gate characterization.

Ellipticity dependence of high harmonics generated using 400 nm driving lasers

NASA Astrophysics Data System (ADS)

Cheng, Yan; Khan, Sabih; Zhao, Kun; Zhao, Baozhen; Chini, Michael; Chang, Zenghu

2011-05-01

High order harmonics generated from 400 nm driving pulses hold promise of scaling photon flux of single attosecond pulses by one to two orders of magnitude. We report ellipticity dependence and phase matching of high order harmonics generated from such pulses in Neon gas target and compared them with similar measurements using 800 nm driving pulses. Based on measured ellipticity dependence, we predict that double optical gating (DOG) and generalized double optical gating (GDOG) can be employed to extract intense single attosecond pulses from pulse train, while polarization gating (PG) may not work for this purpose. This material is supported by the U.S. Army Research Office under grant number W911NF-07-1-0475, and by the Chemical Sciences, Geosciences and Biosciences Division, Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.

A 65k pixel, 150k frames-per-second camera with global gating and micro-lenses suitable for fluorescence lifetime imaging

NASA Astrophysics Data System (ADS)

Burri, Samuel; Powolny, François; Bruschini, Claudio E.; Michalet, Xavier; Regazzoni, Francesco; Charbon, Edoardo

2014-05-01

This paper presents our work on a 65k pixel single-photon avalanche diode (SPAD) based imaging sensor realized in a 0.35μm standard CMOS process. At a resolution of 512 by 128 pixels the sensor is read out in 6.4μs to deliver over 150k monochrome frames per second. The individual pixel has a size of 24μm2 and contains the SPAD with a 12T quenching and gating circuitry along with a memory element. The gating signals are distributed across the chip through a balanced tree to minimize the signal skew between the pixels. The array of pixels is row-addressable and data is sent out of the chip on 128 lines in parallel at a frequency of 80MHz. The system is controlled by an FPGA which generates the gating and readout signals and can be used for arbitrary real-time computation on the frames from the sensor. The communication protocol between the camera and a conventional PC is USB2. The active area of the chip is 5% and can be significantly improved with the application of a micro-lens array. A micro-lens array, for use with collimated light, has been designed and its performance is reviewed in the paper. Among other high-speed phenomena the gating circuitry capable of generating illumination periods shorter than 5ns can be used for Fluorescence Lifetime Imaging (FLIM). In order to measure the lifetime of fluorophores excited by a picosecond laser, the sensor's illumination period is synchronized with the excitation laser pulses. A histogram of the photon arrival times relative to the excitation is then constructed by counting the photons arriving during the sensitive time for several positions of the illumination window. The histogram for each pixel is transferred afterwards to a computer where software routines extract the lifetime at each location with an accuracy better than 100ps. We show results for fluorescence lifetime measurements using different fluorophores with lifetimes ranging from 150ps to 5ns.

Respiratory gating during stereotactic body radiotherapy for lung cancer reduces tumor position variability.

PubMed

Saito, Tetsuo; Matsuyama, Tomohiko; Toya, Ryo; Fukugawa, Yoshiyuki; Toyofuku, Takamasa; Semba, Akiko; Oya, Natsuo

2014-01-01

We evaluated the effects of respiratory gating on treatment accuracy in lung cancer patients undergoing lung stereotactic body radiotherapy by using electronic portal imaging device (EPID) images. Our study population consisted of 30 lung cancer patients treated with stereotactic body radiotherapy (48 Gy/4 fractions/4 to 9 days). Of these, 14 were treated with- (group A) and 16 without gating (group B); typically the patients whose tumors showed three-dimensional respiratory motion ≧5 mm were selected for gating. Tumor respiratory motion was estimated using four-dimensional computed tomography images acquired during treatment simulation. Tumor position variability during all treatment sessions was assessed by measuring the standard deviation (SD) and range of tumor displacement on EPID images. The two groups were compared for tumor respiratory motion and position variability using the Mann-Whitney U test. The median three-dimensional tumor motion during simulation was greater in group A than group B (9 mm, range 3-30 mm vs. 2 mm, range 0-4 mm; p<0.001). In groups A and B the median SD of the tumor position was 1.1 mm and 0.9 mm in the craniocaudal- (p = 0.24) and 0.7 mm and 0.6 mm in the mediolateral direction (p = 0.89), respectively. The median range of the tumor position was 4.0 mm and 3.0 mm in the craniocaudal- (p = 0.21) and 2.0 mm and 1.5 mm in the mediolateral direction (p = 0.20), respectively. Although patients treated with respiratory gating exhibited greater respiratory tumor motion during treatment simulation, tumor position variability in the EPID images was low and comparable to patients treated without gating. This demonstrates the benefit of respiratory gating.

45. DETAIL INTERIOR VIEW OF WICKET GATE CONTROL MECHANISM FOR ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

45. DETAIL INTERIOR VIEW OF WICKET GATE CONTROL MECHANISM FOR TURBINE/GENERATOR UNIT ACCESSIBLE FROM LEVEL +37 OF POWERHOUSE #1. - Bonneville Project, Powerhouse No.1, Spanning Bradford Slough, from Bradford Island, Bonneville, Multnomah County, OR

pH sensing characteristics and biosensing application of solution-gated reduced graphene oxide field-effect transistors.

PubMed

Sohn, Il-Yung; Kim, Duck-Jin; Jung, Jin-Heak; Yoon, Ok Ja; Thanh, Tien Nguyen; Quang, Trung Tran; Lee, Nae-Eung

2013-07-15

Solution-gated reduced graphene oxide field-effect transistors (R-GO FETs) were investigated for pH sensing and biochemical sensing applications. A channel of a networked R-GO film formed by self-assembly was incorporated as a sensing layer into a solution-gated FET structure for pH sensing and the detection of acetylcholine (Ach), which is a neurotransmitter in the nerve system, through enzymatic reactions. The fabricated R-GO FET was sensitive to protons (H(+)) with a pH sensitivity of 29 mV/pH in terms of the shift of the charge neutrality point (CNP), which is attributed to changes in the surface potential caused by the interaction of protons with OH surface functional groups present on the R-GO surface. The R-GO FET immobilized with acetylcholinesterase (AchE) was used to detect Ach in the concentration range of 0.1-10mM by sensing protons generated during the enzymatic reactions. The results indicate that R-GO FETs provide the capability to detect protons, demonstrating their applicability as a biosensing device for enzymatic reactions. Copyright © 2013 Elsevier B.V. All rights reserved.

MEG biomarker of Alzheimer's disease: Absence of a prefrontal generator during auditory sensory gating.

PubMed

Josef Golubic, Sanja; Aine, Cheryl J; Stephen, Julia M; Adair, John C; Knoefel, Janice E; Supek, Selma

2017-10-01

Magnetoencephalography (MEG), a direct measure of neuronal activity, is an underexplored tool in the search for biomarkers of Alzheimer's disease (AD). In this study, we used MEG source estimates of auditory gating generators, nonlinear correlations with neuropsychological results, and multivariate analyses to examine the sensitivity and specificity of gating topology modulation to detect AD. Our results demonstrated the use of MEG localization of a medial prefrontal (mPFC) gating generator as a discrete (binary) detector of AD at the individual level and resulted in recategorizing the participant categories in: (1) controls with mPFC generator localized in response to both the standard and deviant tones; (2) a possible preclinical stage of AD participants (a lower functioning group of controls) in which mPFC activation was localized to the deviant tone only; and (3) symptomatic AD in which mPFC activation was not localized to either the deviant or standard tones. This approach showed a large effect size (0.9) and high accuracy, sensitivity, and specificity (100%) in identifying symptomatic AD patients within a limited research sample. The present results demonstrate high potential of mPFC activation as a noninvasive biomarker of AD pathology during putative preclinical and clinical stages. Hum Brain Mapp 38:5180-5194, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Underwater single beam circumferentially scanning detection system using range-gated receiver and adaptive filter

NASA Astrophysics Data System (ADS)

Tan, Yayun; Zhang, He; Zha, Bingting

2017-09-01

Underwater target detection and ranging in seawater are of interest in unmanned underwater vehicles. This study presents an underwater detection system that synchronously scans a collimated laser beam and a narrow field of view to circumferentially detect an underwater target. Hybrid methods of range-gated and variable step-size least mean squares (VSS-LMS) adaptive filter are proposed to suppress water backscattering. The range-gated receiver eliminates the backscattering of near-field water. The VSS-LMS filter extracts the target echo in the remaining backscattering and the constant fraction discriminator timing method is used to improve ranging accuracy. The optimal constant fraction is selected by analysing the jitter noise and slope of the target echo. The prototype of the underwater detection system is constructed and tested in coastal seawater, then the effectiveness of backscattering suppression and high-ranging accuracy is verified through experimental results and analysis discussed in this paper.

Field programmable gate arrays: Evaluation report for space-flight application

NASA Technical Reports Server (NTRS)

Sandoe, Mike; Davarpanah, Mike; Soliman, Kamal; Suszko, Steven; Mackey, Susan

1992-01-01

Field Programmable Gate Arrays commonly called FPGA's are the newer generation of field programmable devices and offer more flexibility in the logic modules they incorporate and in how they are interconnected. The flexibility, the number of logic building blocks available, and the high gate densities achievable are why users find FPGA's attractive. These attributes are important in reducing product development costs and shortening the development cycle. The aerospace community is interested in incorporating this new generation of field programmable technology in space applications. To this end, a consortium was formed to evaluate the quality, reliability, and radiation performance of FPGA's. This report presents the test results on FPGA parts provided by ACTEL Corporation.

Characteristics Of Ferroelectric Logic Gates Using a Spice-Based Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

2005-01-01

A SPICE-based model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. This model was used to generate the I-V characteristic of several logic gates. The use of ferroelectric field effect transistors in memory circuits is being developed by several organizations. The use of FFETs in other circuits, both analog and digital needs to be better understood. The ability of FFETs to have different characteristics depending on the initial polarization can be used to create logic gates. These gates can have properties not available to standard CMOS logic gates, such as memory, reconfigurability and memory. This paper investigates basic properties of FFET logic gates. It models FFET inverter, NAND gate and multi-input NAND gate. The I-V characteristics of the gates are presented as well as transfer characteristics and timing. The model used is a SPICE-based model developed from empirical data from actual Ferroelectric transistors. It simulates all major characteristics of the ferroelectric transistor, including polarization, hysteresis and decay. Contrasts are made of the differences between FFET logic gates and CMOS logic gates. FFET parameters are varied to show the effect on the overall gate. A recodigurable gate is investigated which is not possible with CMOS circuits. The paper concludes that FFETs can be used in logic gates and have several advantages over standard CMOS gates.

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

DOE Office of Scientific and Technical Information (OSTI.GOV)

Obolenskaya, E. S., E-mail: bess009@mail.ru, E-mail: obolensk@rf.unn.ru; Tarasova, E. A.; Churin, A. Yu.

2016-12-15

Microwave-signal generation in planar Gunn diodes with a two-dimensional electron gas, in which we previously studied steady-state electron transport, is theoretically studied. The applicability of a control electrode similar to a field-effect transistor gate to control the parameters of the output diode microwave signal is considered. The results of physical-topological modeling of semiconductor structures with different diode active-region structures, i.e., without a quantum well, with one and two quantum wells separated by a potential barrier, are compared. The calculated results are compared with our previous experimental data on recording Gunn generation in a Schottky-gate field-effect transistor. It is theoretically andmore » experimentally shown that the power of the signal generated by the planar Gunn diode with a quantum well and a control electrode is sufficient to implement monolithic integrated circuits of different functionalities. It is theoretically and experimentally shown that the use of a control electrode on account of the introduction of corrective feedback allows a significant increase in the radiation resistance of a microwave generator with Schottky-gate field-effect transistors.« less

Influence of Germanium source on dopingless tunnel-FET for improved analog/RF performance

NASA Astrophysics Data System (ADS)

Cecil, Kanchan; Singh, Jawar

2017-01-01

Dopingless (DL) and junctionless devices have attracted attention due to their simplified fabrication process and low thermal budget requirements. Therefore, in this work, we investigated the influence of low band gap Germanium (Ge) instead of Silicon (Si) as a "Source region" material in dopingless (DL) tunnel field-effect transistor (DLTFET). We observed that the Ge source DLTFET delivers much better performance in comparison to Si DLTFET under various analog/RF figure of merits (FOMs), such as transconductance (gm), transconductance generation factor (TGF) (gm /Id), output conductance (gd), output resistance (RO), intrinsic gain (gmRO), intrinsic gate delay (τ) and RF FOMs, like unity gain frequency (fT), gain bandwidth product (GBW) along with various gate capacitances. These parameters were extracted using 2D TCAD device simulations through small signal ac analysis. Higher ION /IOFF ratio (1014) of Ge source DLTFET can reduce the dynamic as well as static power in digital circuits, while higher transconductance generation factor (gm /Id) ∼ 2287 V-1 can lower the bias power of an amplifier. Similarly, enhanced RF FOMs i.e unity gain frequency (fT) and gain bandwidth product (GBW) in Gigahertz range projects the proposed device preference for RF circuits.

Attomicroscopy: from femtosecond to attosecond electron microscopy

NASA Astrophysics Data System (ADS)

Hassan, Mohammed Th

2018-02-01

In the last decade, the development of ultrafast electron diffraction (UED) and microscopy (UEM) have enabled the imaging of atomic motion in real time and space. These pivotal table-top tools opened the door for a vast range of applications in different areas of science spanning chemistry, physics, materials science, and biology. We first discuss the basic principles and recent advancements, including some of the important applications, of both UED and UEM. Then, we discuss the recent advances in the field that have enhanced the spatial and temporal resolutions, where the latter, is however, still limited to a few hundreds of femtoseconds, preventing the imaging of ultrafast dynamics of matter lasting few tens of femtoseconds. Then, we present our new optical gating approach for generating an isolated 30 fs electron pulse with sufficient intensity to attain a temporal resolution on the same time scale. This achievement allows, for the first time, imaging the electron dynamics of matter. Finally, we demonstrate the feasibility of the optical gating approach to generate an isolated attosecond electron pulse, utilizing our recently demonstrated optical attosecond laser pulse, which paves the way for establishing the field of ‘Attomicroscopy’, ultimately enabling us to image the electron motion in action.

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

NASA Astrophysics Data System (ADS)

Kojima, Eiji; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Hosoi, Takuji; Watanabe, Heiji; Shiraishi, Kenji

2018-06-01

We performed first-principle calculations to investigate the effect of incorporation of N atoms into Al2O3 gate dielectrics. Our calculations show that the defect levels generated by VO in Al2O3 are the origin of the stress-induced gate leakage current and that VOVAl complexes in Al2O3 cause negative fixed charge. We revealed that the incorporation of N atoms into Al2O3 eliminates the VO defect levels, reducing the stress-induced gate leakage current. Moreover, this suppresses the formation of negatively charged VOVAl complexes. Therefore, AlON can reduce both stress-induced gate leakage current and negative fixed charge in wide-bandgap-semiconductor MOSFETs.

Photonic ququart logic assisted by the cavity-QED system.

PubMed

Luo, Ming-Xing; Deng, Yun; Li, Hui-Ran; Ma, Song-Ya

2015-08-14

Universal quantum logic gates are important elements for a quantum computer. In contrast to previous constructions of qubit systems, we investigate the possibility of ququart systems (four-dimensional states) dependent on two DOFs of photon systems. We propose some useful one-parameter four-dimensional quantum transformations for the construction of universal ququart logic gates. The interface between the spin of a photon and an electron spin confined in a quantum dot embedded in a microcavity is applied to build universal ququart logic gates on the photon system with two freedoms. Our elementary controlled-ququart gates cost no more than 8 CNOT gates in a qubit system, which is far less than the 104 CNOT gates required for a general four-qubit logic gate. The ququart logic is also used to generate useful hyperentanglements and hyperentanglement-assisted quantum error-correcting code, which may be available in modern physical technology.

Photonic ququart logic assisted by the cavity-QED system

PubMed Central

Luo, Ming-Xing; Deng, Yun; Li, Hui-Ran; Ma, Song-Ya

2015-01-01

Universal quantum logic gates are important elements for a quantum computer. In contrast to previous constructions of qubit systems, we investigate the possibility of ququart systems (four-dimensional states) dependent on two DOFs of photon systems. We propose some useful one-parameter four-dimensional quantum transformations for the construction of universal ququart logic gates. The interface between the spin of a photon and an electron spin confined in a quantum dot embedded in a microcavity is applied to build universal ququart logic gates on the photon system with two freedoms. Our elementary controlled-ququart gates cost no more than 8 CNOT gates in a qubit system, which is far less than the 104 CNOT gates required for a general four-qubit logic gate. The ququart logic is also used to generate useful hyperentanglements and hyperentanglement-assisted quantum error-correcting code, which may be available in modern physical technology. PMID:26272869

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

A Novel Implementation of Efficient Algorithms for Quantum Circuit Synthesis

NASA Astrophysics Data System (ADS)

Zeller, Luke

In this project, we design and develop a computer program to effectively approximate arbitrary quantum gates using the discrete set of Clifford Gates together with the T gate (π/8 gate). Employing recent results from Mosca et. al. and Giles and Selinger, we implement a decomposition scheme that outputs a sequence of Clifford, T, and Tt gates that approximate the input to within a specified error range ɛ. Specifically, the given gate is first rounded to an element of Z[1/2, i] with a precision determined by ɛ, and then exact synthesis is employed to produce the resulting gate. It is known that this procedure is optimal in approximating an arbitrary single qubit gate. Our program, written in Matlab and Python, can complete both approximate and exact synthesis of qubits. It can be used to assist in the experimental implementation of an arbitrary fault-tolerant single qubit gate, for which direct implementation isn't feasible.

Distribution of hybrid entanglement and hyperentanglement with time-bin for secure quantum channel under noise via weak cross-Kerr nonlinearity.

PubMed

Heo, Jino; Kang, Min-Sung; Hong, Chang-Ho; Yang, Hyung-Jin; Choi, Seong-Gon; Hong, Jong-Phil

2017-08-31

We design schemes to generate and distribute hybrid entanglement and hyperentanglement correlated with degrees of freedom (polarization and time-bin) via weak cross-Kerr nonlinearities (XKNLs) and linear optical devices (including time-bin encoders). In our scheme, the multi-photon gates (which consist of XKNLs, quantum bus [qubus] beams, and photon-number-resolving [PNR] measurement) with time-bin encoders can generate hyperentanglement or hybrid entanglement. And we can also purify the entangled state (polarization) of two photons using only linear optical devices and time-bin encoders under a noisy (bit-flip) channel. Subsequently, through local operations (using a multi-photon gate via XKNLs) and classical communications, it is possible to generate a four-qubit hybrid entangled state (polarization and time-bin). Finally, we discuss how the multi-photon gate using XKNLs, qubus beams, and PNR measurement can be reliably performed under the decoherence effect.

Optimal mode transformations for linear-optical cluster-state generation

DOE PAGES

Uskov, Dmitry B.; Lougovski, Pavel; Alsing, Paul M.; ...

2015-06-15

In this paper, we analyze the generation of linear-optical cluster states (LOCSs) via sequential addition of one and two qubits. Existing approaches employ the stochastic linear-optical two-qubit controlled-Z (CZ) gate with success rate of 1/9 per operation. The question of optimality of the CZ gate with respect to LOCS generation has remained open. We report that there are alternative schemes to the CZ gate that are exponentially more efficient and show that sequential LOCS growth is indeed globally optimal. We find that the optimal cluster growth operation is a state transformation on a subspace of the full Hilbert space. Finally,more » we show that the maximal success rate of postselected entangling n photonic qubits or m Bell pairs into a cluster is (1/2) n-1 and (1/4) m-1, respectively, with no ancilla photons, and we give an explicit optical description of the optimal mode transformations.« less

7. UNIT 4, VIEW TO SOUTHEAST, SHOWING GATE MOTOR ASSEMBLY ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

7. UNIT 4, VIEW TO SOUTHEAST, SHOWING GATE MOTOR ASSEMBLY (CENTER), TURBINE (LEFT FOREGROUND), AND GENERATOR (BACKGROUND) - Washington Water Power Company Monroe Street Plant, Units 4 & 5, South Bank Spokane River, below Monroe Street Bridge, Spokane, Spokane County, WA

6. UNIT 5, VIEW TO SOUTHWEST, SHOWING GATE MOTOR ASSEMBLY ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. UNIT 5, VIEW TO SOUTHWEST, SHOWING GATE MOTOR ASSEMBLY (CENTER), TURBINE (RIGHT FOREGROUND), AND GENERATOR (BACKGROUND) - Washington Water Power Company Monroe Street Plant, Units 4 & 5, South Bank Spokane River, below Monroe Street Bridge, Spokane, Spokane County, WA

Model-based restoration using light vein for range-gated imaging systems.

PubMed

Wang, Canjin; Sun, Tao; Wang, Tingfeng; Wang, Rui; Guo, Jin; Tian, Yuzhen

2016-09-10

The images captured by an airborne range-gated imaging system are degraded by many factors, such as light scattering, noise, defocus of the optical system, atmospheric disturbances, platform vibrations, and so on. The characteristics of low illumination, few details, and high noise make the state-of-the-art restoration method fail. In this paper, we present a restoration method especially for range-gated imaging systems. The degradation process is divided into two parts: the static part and the dynamic part. For the static part, we establish the physical model of the imaging system according to the laser transmission theory, and estimate the static point spread function (PSF). For the dynamic part, a so-called light vein feature extraction method is presented to estimate the fuzzy parameter of the atmospheric disturbance and platform movement, which make contributions to the dynamic PSF. Finally, combined with the static and dynamic PSF, an iterative updating framework is used to restore the image. Compared with the state-of-the-art methods, the proposed method can effectively suppress ringing artifacts and achieve better performance in a range-gated imaging system.

Middle Devonian to Early Carboniferous event stratigraphy of Devils Gate and Northern Antelope Range sections, Nevada, U.S.A

USGS Publications Warehouse

Sandberg, C.A.; Morrow, J.R.; Poole, F.G.; Ziegler, W.

2003-01-01

The classic type section of the Devils Gate Limestone at Devils Gate Pass is situated on the eastern slope of a proto-Antler forebulge that resulted from convergence of the west side of the North American continent with an ocean plate. The original Late Devonian forebulge, the site of which is now located between Devils Gate Pass and the Northern Antelope Range, separated the continental-rise to deep-slope Woodruff basin on the west from the backbulge Pilot basin on the east. Two connections between these basins are recorded by deeper water siltstone beds at Devils Gate; the older one is the lower tongue of the Woodruff Formation, which forms the basal unit of the upper member of the type Devils Gate, and the upper one is the overlying, thin lower member of the Pilot Shale. The forebulge and the backbulge Pilot basin originated during the middle Frasnian (early Late Devonian) Early hassi Zone, shortly following the Alamo Impact within the punctata Zone in southern Nevada. Evidence of this impact is recorded by coeval and reworked shocked quartz grains in the Northern Antelope Range and possibly by a unique bypass-channel or megatsunami-uprush sandy diamictite within carbonate-platform rocks of the lower member of the type Devils Gate Limestone. Besides the Alamo Impact and three regional events, two other important global events are recorded in the Devils Gate section. The semichatovae eustatic rise, the maximum Late Devonian flooding event, coincides with the sharp lithogenetic change at the discordant boundary above the lower member of the Devils Gate Limestone. Most significantly, the Devils Gate section contains the thickest and most complete rock record in North America across the late Frasnian linguiformis Zone mass extinction event. Excellent exposures include not only the extinction shale, but also a younger. Early triangularis Zone tsunamite breccia, produced by global collapse of carbonate platforms during a shallowing event that continued into the next younger Famennian Stage. The Northern Antelope Range section is located near the top of the west side of the proto-Antler forebulge. Because of its unusual, tectonically active location, unmatched at any other Nevada localities, this section records only four regional and global events during a timespan slightly longer than that of the Devils Gate section. The global semichatovae rise and late Frasnian mass extinction event are largely masked because of the depositional complexities resulting from this location.

Voltage-gated sodium channel expression and action potential generation in differentiated NG108-15 cells.

PubMed

Liu, Jinxu; Tu, Huiyin; Zhang, Dongze; Zheng, Hong; Li, Yu-Long

2012-10-25

The generation of action potential is required for stimulus-evoked neurotransmitter release in most neurons. Although various voltage-gated ion channels are involved in action potential production, the initiation of the action potential is mainly mediated by voltage-gated Na+ channels. In the present study, differentiation-induced changes of mRNA and protein expression of Na+ channels, Na+ currents, and cell membrane excitability were investigated in NG108-15 cells. Whole-cell patch-clamp results showed that differentiation (9 days) didn't change cell membrane excitability, compared to undifferentiated state. But differentiation (21 days) induced the action potential generation in 45.5% of NG108-15 cells (25/55 cells). In 9-day-differentiated cells, Na+ currents were mildly increased, which was also found in 21-day differentiated cells without action potential. In 21-day differentiated cells with action potential, Na+ currents were significantly enhanced. Western blot data showed that the expression of Na+ channels was increased with differentiated-time dependent manner. Single-cell real-time PCR data demonstrated that the expression of Na+ channel mRNA was increased by 21 days of differentiation in NG108-15 cells. More importantly, the mRNA level of Na+ channels in cells with action potential was higher than that in cells without action potential. Differentiation induces expression of voltage-gated Na+ channels and action potential generation in NG108-15 cells. A high level of the Na+ channel density is required for differentiation-triggered action potential generation.

Sensing small neurotransmitter-enzyme interaction with nanoporous gated ion-sensitive field effect transistors.

PubMed

Kisner, Alexandre; Stockmann, Regina; Jansen, Michael; Yegin, Ugur; Offenhäusser, Andreas; Kubota, Lauro Tatsuo; Mourzina, Yulia

2012-01-15

Ion-sensitive field effect transistors with gates having a high density of nanopores were fabricated and employed to sense the neurotransmitter dopamine with high selectivity and detectability at micromolar range. The nanoporous structure of the gates was produced by applying a relatively simple anodizing process, which yielded a porous alumina layer with pores exhibiting a mean diameter ranging from 20 to 35 nm. Gate-source voltages of the transistors demonstrated a pH-dependence that was linear over a wide range and could be understood as changes in surface charges during protonation and deprotonation. The large surface area provided by the pores allowed the physical immobilization of tyrosinase, which is an enzyme that oxidizes dopamine, on the gates of the transistors, and thus, changes the acid-base behavior on their surfaces. Concentration-dependent dopamine interacting with immobilized tyrosinase showed a linear dependence into a physiological range of interest for dopamine concentration in the changes of gate-source voltages. In comparison with previous approaches, a response time relatively fast for detecting dopamine was obtained. Additionally, selectivity assays for other neurotransmitters that are abundantly found in the brain were examined. These results demonstrate that the nanoporous structure of ion-sensitive field effect transistors can easily be used to immobilize specific enzyme that can readily and selectively detect small neurotransmitter molecule based on its acid-base interaction with the receptor. Therefore, it could serve as a technology platform for molecular studies of neurotransmitter-enzyme binding and drugs screening. Copyright © 2011 Elsevier B.V. All rights reserved.

Detection of Objects Hidden in Highly Scattering Media Using Time-Gated Imaging Methods

NASA Technical Reports Server (NTRS)

Galland, Pierre A.; Wang, L.; Liang, X.; Ho, P. P.; Alfano, R. R.

2000-01-01

Non-intrusive and non-invasive optical imaging techniques has generated great interest among researchers for their potential applications to biological study, device characterization, surface defect detection, and jet fuel dynamics. Non-linear optical parametric amplification gate (NLOPG) has been used to detect back-scattered images of objects hidden in diluted Intralipid solutions. To directly detect objects hidden in highly scattering media, the diffusive component of light needs to be sorted out from early arrived ballistic and snake photons. In an optical imaging system, images are collected in transmission or back-scattered geometry. The early arrival photons in the transmission approach, always carry the direct information of the hidden object embedded in the turbid medium. In the back-scattered approach, the result is not so forth coming. In the presence of a scattering host, the first arrival photons in back-scattered approach will be directly photons from the host material. In the presentation, NLOPG was applied to acquire time resolved back-scattered images under the phase matching condition. A time-gated amplified signal was obtained through this NLOPG process. The system's gain was approximately 100 times. The time-gate was achieved through phase matching condition where only coherent photons retain their phase. As a result, the diffusive photons, which were the primary contributor to the background, were removed. With a large dynamic range and high resolution, time-gated early light imaging has the potential for improving rocket/aircraft design by determining jets shape and particle sizes. Refinements to these techniques may enable drop size measurements in the highly scattering, optically dense region of multi-element rocket injectors. These types of measurements should greatly enhance the design of stable, and higher performing rocket engines.

Functional near-infrared spectroscopy at small source-detector distance by means of high dynamic-range fast-gated SPAD acquisitions: first in-vivo measurements

NASA Astrophysics Data System (ADS)

Di Sieno, L.; Contini, D.; Dalla Mora, A.; Torricelli, A.; Spinelli, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

2013-06-01

In this article, we show experimental results of time-resolved optical spectroscopy performed with small distance between launching and detecting fibers. It was already demonstrated that depth discrimination is independent of source-detector separation and that measurements at small source detector distance provide better contrast and spatial resolution. The main disadvantage is represent by the huge increase in early photons (scarcely diffused by tissue) peak that can saturate the dynamic range of most detectors, hiding information carried by late photons. Thanks to a fast-gated Single- Photon Avalanche Diode (SPAD) module, we are able to reject the peak of early photons and to obtain high-dynamic range acquisitions. We exploit fast-gated SPAD module to perform for the first time functional near-infrared spectroscopy (fNIRS) at small source-detector distance for in vivo measurements and we demonstrate the possibility to detect non-invasively the dynamics of oxygenated and deoxygenated haemoglobin occurring in the motor cortex during a motor task. We also show the improvement in terms of signal amplitude and Signal-to-Noise Ratio (SNR) obtained exploiting fast-gated SPAD performances with respect to "non-gated" measurements.

A study of quantum mechanical probabilities in the classical Hodgkin-Huxley model.

PubMed

Moradi, N; Scholkmann, F; Salari, V

2015-03-01

The Hodgkin-Huxley (HH) model is a powerful model to explain different aspects of spike generation in excitable cells. However, the HH model was proposed in 1952 when the real structure of the ion channel was unknown. It is now common knowledge that in many ion-channel proteins the flow of ions through the pore is governed by a gate, comprising a so-called "selectivity filter" inside the ion channel, which can be controlled by electrical interactions. The selectivity filter (SF) is believed to be responsible for the selection and fast conduction of particular ions across the membrane of an excitable cell. Other (generally larger) parts of the molecule such as the pore-domain gate control the access of ions to the channel protein. In fact, two types of gates are considered here for ion channels: the "external gate", which is the voltage sensitive gate, and the "internal gate" which is the selectivity filter gate (SFG). Some quantum effects are expected in the SFG due to its small dimensions, which may play an important role in the operation of an ion channel. Here, we examine parameters in a generalized model of HH to see whether any parameter affects the spike generation. Our results indicate that the previously suggested semi-quantum-classical equation proposed by Bernroider and Summhammer (BS) agrees strongly with the HH equation under different conditions and may even provide a better explanation in some cases. We conclude that the BS model can refine the classical HH model substantially.

Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET

NASA Astrophysics Data System (ADS)

Pradhan, K. P.; Priyanka; Sahu, P. K.

2016-01-01

Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i.e., ultra-thin-body (UTB), FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. This innovative architecture promises to enhance the device performance as compared to conventional FinFET without increasing the chip area. For the first time, we have incorporated two different dielectric materials (SiO2, and HfO2) as gate oxide to analyze the effect on various performance metrics of SDS wavy FinFET. This work evaluates the response of double material gate oxide (DMGO) on parameters like mobility, on current (Ion), transconductance (gm), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) in SDS wavy FinFET. This work also reveals the presence of biasing point i.e., zero temperature coefficient (ZTC) bias point. The ZTC bias point is that point where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performances are also subjected to extensive analysis. This further validates the reliability of DMGO-SDS FinFET and its application opportunities involved in modeling analog/RF circuits for a broad range of temperature applications. From extensive 3-D device simulation, we have determined that the inclusion of DMGO in SDS wavy FinFET is superior in performance.

Tumor control probability reduction in gated radiotherapy of non-small cell lung cancers: a feasibility study.

PubMed

Siochi, R Alfredo; Kim, Yusung; Bhatia, Sudershan

2014-10-16

We studied the feasibility of evaluating tumor control probability (TCP) reductions for tumor motion beyond planned gated radiotherapy margins. Tumor motion was determined from cone-beam CT projections acquired for patient setup, intrafraction respiratory traces, and 4D CTs for five non-small cell lung cancer (NSCLC) patients treated with gated radiotherapy. Tumors were subdivided into 1 mm sections whose positions and doses were determined for each beam-on time point. (The dose calculation model was verified with motion phantom measurements.) The calculated dose distributions were used to generate the treatment TCPs for each patient. The plan TCPs were calculated from the treatment planning dose distributions. The treatment TCPs were compared to the plan TCPs for various models and parameters. Calculated doses matched phantom measurements within 0.3% for up to 3 cm of motion. TCP reductions for excess motion greater than 5mm ranged from 1.7% to 11.9%, depending on model parameters, and were as high as 48.6% for model parameters that simulated an individual patient. Repeating the worst case motion for all fractions increased TCP reductions by a factor of 2 to 3, while hypofractionation decreased these reductions by as much as a factor of 3. Treatment motion exceeding gating margins by more than 5 mm can lead to considerable TCP reductions. Appropriate margins for excess motion are recommended, unless applying daily tumor motion verification and adjusting thegating window.

Spin selective filtering of polariton condensate flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, T.; Department of Materials Science and Technology, University of Crete, 71003 Heraklion, Crete; Antón, C.

2015-07-06

Spin-selective spatial filtering of propagating polariton condensates, using a controllable spin-dependent gating barrier, in a one-dimensional semiconductor microcavity ridge waveguide is reported. A nonresonant laser beam provides the source of propagating polaritons, while a second circularly polarized weak beam imprints a spin dependent potential barrier, which gates the polariton flow and generates polariton spin currents. A complete spin-based control over the blocked and transmitted polaritons is obtained by varying the gate polarization.

Molecular pathophysiology and pharmacology of the voltage-sensing module of neuronal ion channels

PubMed Central

Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; De Maria, Michela; Manocchio, Laura; Medoro, Alessandro; Taglialatela, Maurizio

2015-01-01

Voltage-gated ion channels (VGICs) are membrane proteins that switch from a closed to open state in response to changes in membrane potential, thus enabling ion fluxes across the cell membranes. The mechanism that regulate the structural rearrangements occurring in VGICs in response to changes in membrane potential still remains one of the most challenging topic of modern biophysics. Na+, Ca2+ and K+ voltage-gated channels are structurally formed by the assembly of four similar domains, each comprising six transmembrane segments. Each domain can be divided into two main regions: the Pore Module (PM) and the Voltage-Sensing Module (VSM). The PM (helices S5 and S6 and intervening linker) is responsible for gate opening and ion selectivity; by contrast, the VSM, comprising the first four transmembrane helices (S1–S4), undergoes the first conformational changes in response to membrane voltage variations. In particular, the S4 segment of each domain, which contains several positively charged residues interspersed with hydrophobic amino acids, is located within the membrane electric field and plays an essential role in voltage sensing. In neurons, specific gating properties of each channel subtype underlie a variety of biological events, ranging from the generation and propagation of electrical impulses, to the secretion of neurotransmitters and to the regulation of gene expression. Given the important functional role played by the VSM in neuronal VGICs, it is not surprising that various VSM mutations affecting the gating process of these channels are responsible for human diseases, and that compounds acting on the VSM have emerged as important investigational tools with great therapeutic potential. In the present review we will briefly describe the most recent discoveries concerning how the VSM exerts its function, how genetically inherited diseases caused by mutations occurring in the VSM affects gating in VGICs, and how several classes of drugs and toxins selectively target the VSM. PMID:26236192

Molecular pathophysiology and pharmacology of the voltage-sensing module of neuronal ion channels.

PubMed

Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; De Maria, Michela; Manocchio, Laura; Medoro, Alessandro; Taglialatela, Maurizio

2015-01-01

Voltage-gated ion channels (VGICs) are membrane proteins that switch from a closed to open state in response to changes in membrane potential, thus enabling ion fluxes across the cell membranes. The mechanism that regulate the structural rearrangements occurring in VGICs in response to changes in membrane potential still remains one of the most challenging topic of modern biophysics. Na(+), Ca(2+) and K(+) voltage-gated channels are structurally formed by the assembly of four similar domains, each comprising six transmembrane segments. Each domain can be divided into two main regions: the Pore Module (PM) and the Voltage-Sensing Module (VSM). The PM (helices S5 and S6 and intervening linker) is responsible for gate opening and ion selectivity; by contrast, the VSM, comprising the first four transmembrane helices (S1-S4), undergoes the first conformational changes in response to membrane voltage variations. In particular, the S4 segment of each domain, which contains several positively charged residues interspersed with hydrophobic amino acids, is located within the membrane electric field and plays an essential role in voltage sensing. In neurons, specific gating properties of each channel subtype underlie a variety of biological events, ranging from the generation and propagation of electrical impulses, to the secretion of neurotransmitters and to the regulation of gene expression. Given the important functional role played by the VSM in neuronal VGICs, it is not surprising that various VSM mutations affecting the gating process of these channels are responsible for human diseases, and that compounds acting on the VSM have emerged as important investigational tools with great therapeutic potential. In the present review we will briefly describe the most recent discoveries concerning how the VSM exerts its function, how genetically inherited diseases caused by mutations occurring in the VSM affects gating in VGICs, and how several classes of drugs and toxins selectively target the VSM.

Ionizing radiation detector

DOEpatents

Thacker, Louis H.

1990-01-01

An ionizing radiation detector is provided which is based on the principle of analog electronic integration of radiation sensor currents in the sub-pico to nano ampere range between fixed voltage switching thresholds with automatic voltage reversal each time the appropriate threshold is reached. The thresholds are provided by a first NAND gate Schmitt trigger which is coupled with a second NAND gate Schmitt trigger operating in an alternate switching state from the first gate to turn either a visible or audible indicating device on and off in response to the gate switching rate which is indicative of the level of radiation being sensed. The detector can be configured as a small, personal radiation dosimeter which is simple to operate and responsive over a dynamic range of at least 0.01 to 1000 R/hr.

Evaluation of normal lung tissue complication probability in gated and conventional radiotherapy using the 4D XCAT digital phantom.

PubMed

Shahzadeh, Sara; Gholami, Somayeh; Aghamiri, Seyed Mahmood Reza; Mahani, Hojjat; Nabavi, Mansoure; Kalantari, Faraz

2018-06-01

The present study was conducted to investigate normal lung tissue complication probability in gated and conventional radiotherapy (RT) as a function of diaphragm motion, lesion size, and its location using 4D-XCAT digital phantom in a simulation study. Different time series of 3D-CT images were generated using the 4D-XCAT digital phantom. The binary data obtained from this phantom were then converted to the digital imaging and communication in medicine (DICOM) format using an in-house MATLAB-based program to be compatible with our treatment planning system (TPS). The 3D-TPS with superposition computational algorithm was used to generate conventional and gated plans. Treatment plans were generated for 36 different XCAT phantom configurations. These included four diaphragm motions of 20, 25, 30 and 35 mm, three lesion sizes of 3, 4, and 5 cm in diameter and each tumor was placed in four different lung locations (right lower lobe, right upper lobe, left lower lobe and left upper lobe). The complication of normal lung tissue was assessed in terms of mean lung dose (MLD), the lung volume receiving ≥20 Gy (V20), and normal tissue complication probability (NTCP). The results showed that the gated RT yields superior outcomes in terms of normal tissue complication compared to the conventional RT. For all cases, the gated radiation therapy technique reduced the mean dose, V20, and NTCP of lung tissue by up to 5.53 Gy, 13.38%, and 23.89%, respectively. The results of this study showed that the gated RT provides significant advantages in terms of the normal lung tissue complication, compared to the conventional RT, especially for the lesions near the diaphragm. Copyright © 2018 Elsevier Ltd. All rights reserved.

Brushless DC motor control system responsive to control signals generated by a computer or the like

NASA Technical Reports Server (NTRS)

Packard, D. T. (Inventor)

1985-01-01

A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The motor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor be regulated by applying a separate control signal and each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Brushless DC motor control system responsive to control signals generated by a computer or the like

NASA Technical Reports Server (NTRS)

Packard, Douglas T. (Inventor); Schmitt, Donald E. (Inventor)

1987-01-01

A control system for a brushless DC motor responsive to digital control signals is disclosed. The motor includes a multiphase wound stator and a permanent magnet rotor. The rotor is arranged so that each phase winding, when energized from a DC source, will drive the rotor through a predetermined angular position or step. A commutation signal generator responsive to the shaft position provides a commutation signal for each winding. A programmable control signal generator such as a computer or microprocessor produces individual digital control signals for each phase winding. The control signals and commutation signals associated with each winding are applied to an AND gate for that phase winding. Each gate controls a switch connected in series with the associated phase winding and the DC source so that each phase winding is energized only when the commutation signal and the control signal associated with that phase winding are present. The motor shaft may be advanced one step at a time to a desired position by applying a predetermined number of control signals in the proper sequence to the AND gates and the torque generated by the motor may be regulated by applying a separate control signal to each AND gate which is pulse width modulated to control the total time that each switch connects its associated winding to the DC source during each commutation period.

Redundant operation of counter modules

NASA Technical Reports Server (NTRS)

Nagano, S. (Inventor)

1980-01-01

A technique for the redundant operation of counter modules is described. Redundant operation is maintained by detecting the zero state of each counter and clearing the other to that state, thus periodically resynchronizing the counters, and obtaining an output from both counters through AC coupled diode-OR gates. Redundant operation of counter flip flops is maintained in a similar manner, and synchronous operation of redundant squarewave clock generators of the feedback type is effected by connecting together the feedback inputs of the squarewave generators through a coupling resistor, and obtaining an output from both generators through AC coupled diode-OR gates.

Fast photomultiplier tube gating system for underwater laser detector

NASA Astrophysics Data System (ADS)

Lei, Xuanhua; Yang, Kecheng; Rao, Jionghui; Zhang, Xiaohui; Xia, Min; Zheng, Yi; Li, Wei

2007-01-01

Laser will attenuate during its propagation in water and also be backward scattered by water when it is used to detect bubbles in the ocean. Meanwhile backward scattering intensity of the bubbles is feeble, its dynamic range reaches to the order of 6, which saturates PMT and its post-treatment circuit. Timely gating system is used to solve the problem. The system contains pulsed laser and gating PMT receiver. The wavelength of the laser is 532nm, with pulse width of several nanometers. Its operational delay is matched with the time period between laser traveling forward and back after scattered by the target. By doing this, the light scattered by other object is eliminated, dynamic range of the signal reduces, and consequently SNR increases. In order to avoid Signal Induced Noise(SIN), we choose PMT R1333 having no HA coating. TTL logical level, which is used as gating signal, controls the first dynode voltage of PMT to implement gating. Gating speed is about 100ns, of which the width is tunable. By carefully designing the electronic system, SNR is eliminated to a level as low as possible, and the output signal of PMT is fast integrated in order to reduce the influences of signal induced by opening the gate.

A common pathway for charge transport through voltage-sensing domains.

PubMed

Chanda, Baron; Bezanilla, Francisco

2008-02-07

Voltage-gated ion channels derive their voltage sensitivity from the movement of specific charged residues in response to a change in transmembrane potential. Several studies on mechanisms of voltage sensing in ion channels support the idea that these gating charges move through a well-defined permeation pathway. This gating pathway in a voltage-gated ion channel can also be mutated to transport free cations, including protons. The recent discovery of proton channels with sequence homology to the voltage-sensing domains suggests that evolution has perhaps exploited the same gating pathway to generate a bona fide voltage-dependent proton transporter. Here we will discuss implications of these findings on the mechanisms underlying charge (and ion) transport by voltage-sensing domains.

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.

2001-06-11

In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSGmore » oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. {copyright} 2001 American Institute of Physics.« less

The cooperative voltage sensor motion that gates a potassium channel.

PubMed

Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

2005-01-01

The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

The Cooperative Voltage Sensor Motion that Gates a Potassium Channel

PubMed Central

Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

2005-01-01

The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close. PMID:15623895

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

NASA Astrophysics Data System (ADS)

Li, Yun; Jiang, Hai; Lun, Zhiyuan; Wang, Yijiao; Huang, Peng; Hao, Hao; Du, Gang; Zhang, Xing; Liu, Xiaoyan

2016-04-01

Degradation behaviors in the high-k/metal gate stacks of nMOSFETs are investigated by three-dimensional (3D) kinetic Monte-Carlo (KMC) simulation with multiple trap coupling. Novel microscopic mechanisms are simultaneously considered in a compound system: (1) trapping/detrapping from/to substrate/gate; (2) trapping/detrapping to other traps; (3) trap generation and recombination. Interacting traps can contribute to random telegraph noise (RTN), bias temperature instability (BTI), and trap-assisted tunneling (TAT). Simulation results show that trap interaction induces higher probability and greater complexity in trapping/detrapping processes and greatly affects the characteristics of RTN and BTI. Different types of trap distribution cause largely different behaviors of RTN, BTI, and TAT. TAT currents caused by multiple trap coupling are sensitive to the gate voltage. Moreover, trap generation and recombination have great effects on the degradation of HfO2-based nMOSFETs under a large stress.

Structural Mechanism of Voltage-Dependent Gating in an Isolated Voltage-Sensing Domain

PubMed Central

Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos; Hulse, Raymond E.; Roux, Benoit; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

2014-01-01

SUMMARY The transduction of transmembrane electric fields into protein motion plays an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSD) carry out these functions through reorientations of S4 helix with discrete gating charges. Here, crystal structures of the VSD from Ci-VSP were determined in both, active (Up) and resting (Down) conformations. The S4 undergoes a ~5 Å displacement along its main axis accompanied by a ~60o rotation, consistent with the helix-screw gating mechanism. This movement is stabilized by a change in countercharge partners in helices S1 and S3, generating an estimated net charge transfer of ~1 eo. Gating charges move relative to a “hydrophobic gasket” that electrically divides intra and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent cellular activities. PMID:24487958

ELECTRICAL LOAD ANTICIPATOR AND RECORDER

DOEpatents

Russell, J.B.; Thomas, R.J.

1961-07-25

A system is descrbied in which an indication of the prevailing energy consumption in an electrical power metering system and a projected Power demand for one demand interval is provided at selected increments of time withm the demand interval. Each watthour meter in the system is provided with an impulse generator that generates two impulses for each revolution of the meter disc. The total pulses received frorn all the meters are continuously totaled and are fed to a plurality of parallel connected gated counters. Each counter has its gate opened at different sub-time intervals during the demand interval. A multiplier is connected to each of the gated counters except the last one and each multiplier is provided with a different multiplier constant so as to provide an estimate of the power to be drawn over the entire demand interval at the end of each of the different sub-time intervals. Means are provided for recording the ontputs from the different circuits in synchronism with the actuation oi each gate circuit.

Ryanodine receptor gating controls generation of diastolic calcium waves in cardiac myocytes

PubMed Central

Petrovič, Pavol; Valent, Ivan; Cocherová, Elena; Pavelková, Jana

2015-01-01

The role of cardiac ryanodine receptor (RyR) gating in the initiation and propagation of calcium waves was investigated using a mathematical model comprising a stochastic description of RyR gating and a deterministic description of calcium diffusion and sequestration. We used a one-dimensional array of equidistantly spaced RyR clusters, representing the confocal scanning line, to simulate the formation of calcium sparks. Our model provided an excellent description of the calcium dependence of the frequency of diastolic calcium sparks and of the increased tendency for the production of calcium waves after a decrease in cytosolic calcium buffering. We developed a hypothesis relating changes in the propensity to form calcium waves to changes of RyR gating and tested it by simulation. With a realistic RyR gating model, increased ability of RyR to be activated by Ca2+ strongly increased the propensity for generation of calcium waves at low (0.05–0.1-µM) calcium concentrations but only slightly at high (0.2–0.4-µM) calcium concentrations. Changes in RyR gating altered calcium wave formation by changing the calcium sensitivity of spontaneous calcium spark activation and/or the average number of open RyRs in spontaneous calcium sparks. Gating changes that did not affect RyR activation by Ca2+ had only a weak effect on the propensity to form calcium waves, even if they strongly increased calcium spark frequency. Calcium waves induced by modulating the properties of the RyR activation site could be suppressed by inhibiting the spontaneous opening of the RyR. These data can explain the increased tendency for production of calcium waves under conditions when RyR gating is altered in cardiac diseases. PMID:26009544

Consequences of converting graded to action potentials upon neural information coding and energy efficiency.

PubMed

Sengupta, Biswa; Laughlin, Simon Barry; Niven, Jeremy Edward

2014-01-01

Information is encoded in neural circuits using both graded and action potentials, converting between them within single neurons and successive processing layers. This conversion is accompanied by information loss and a drop in energy efficiency. We investigate the biophysical causes of this loss of information and efficiency by comparing spiking neuron models, containing stochastic voltage-gated Na(+) and K(+) channels, with generator potential and graded potential models lacking voltage-gated Na(+) channels. We identify three causes of information loss in the generator potential that are the by-product of action potential generation: (1) the voltage-gated Na(+) channels necessary for action potential generation increase intrinsic noise and (2) introduce non-linearities, and (3) the finite duration of the action potential creates a 'footprint' in the generator potential that obscures incoming signals. These three processes reduce information rates by ∼50% in generator potentials, to ∼3 times that of spike trains. Both generator potentials and graded potentials consume almost an order of magnitude less energy per second than spike trains. Because of the lower information rates of generator potentials they are substantially less energy efficient than graded potentials. However, both are an order of magnitude more efficient than spike trains due to the higher energy costs and low information content of spikes, emphasizing that there is a two-fold cost of converting analogue to digital; information loss and cost inflation.

Consequences of Converting Graded to Action Potentials upon Neural Information Coding and Energy Efficiency

PubMed Central

Sengupta, Biswa; Laughlin, Simon Barry; Niven, Jeremy Edward

2014-01-01

Information is encoded in neural circuits using both graded and action potentials, converting between them within single neurons and successive processing layers. This conversion is accompanied by information loss and a drop in energy efficiency. We investigate the biophysical causes of this loss of information and efficiency by comparing spiking neuron models, containing stochastic voltage-gated Na+ and K+ channels, with generator potential and graded potential models lacking voltage-gated Na+ channels. We identify three causes of information loss in the generator potential that are the by-product of action potential generation: (1) the voltage-gated Na+ channels necessary for action potential generation increase intrinsic noise and (2) introduce non-linearities, and (3) the finite duration of the action potential creates a ‘footprint’ in the generator potential that obscures incoming signals. These three processes reduce information rates by ∼50% in generator potentials, to ∼3 times that of spike trains. Both generator potentials and graded potentials consume almost an order of magnitude less energy per second than spike trains. Because of the lower information rates of generator potentials they are substantially less energy efficient than graded potentials. However, both are an order of magnitude more efficient than spike trains due to the higher energy costs and low information content of spikes, emphasizing that there is a two-fold cost of converting analogue to digital; information loss and cost inflation. PMID:24465197

Logic reversibility and thermodynamic irreversibility demonstrated by DNAzyme-based Toffoli and Fredkin logic gates.

PubMed

Orbach, Ron; Remacle, Françoise; Levine, R D; Willner, Itamar

2012-12-26

The Toffoli and Fredkin gates were suggested as a means to exhibit logic reversibility and thereby reduce energy dissipation associated with logic operations in dense computing circuits. We present a construction of the logically reversible Toffoli and Fredkin gates by implementing a library of predesigned Mg(2+)-dependent DNAzymes and their respective substrates. Although the logical reversibility, for which each set of inputs uniquely correlates to a set of outputs, is demonstrated, the systems manifest thermodynamic irreversibility originating from two quite distinct and nonrelated phenomena. (i) The physical readout of the gates is by fluorescence that depletes the population of the final state of the machine. This irreversible, heat-releasing process is needed for the generation of the output. (ii) The DNAzyme-powered logic gates are made to operate at a finite rate by invoking downhill energy-releasing processes. Even though the three bits of Toffoli's and Fredkin's logically reversible gates manifest thermodynamic irreversibility, we suggest that these gates could have important practical implication in future nanomedicine.

Realization of a quantum gate using gravitational search algorithm by perturbing three-dimensional harmonic oscillator with an electromagnetic field

NASA Astrophysics Data System (ADS)

Sharma, Navneet; Rawat, Tarun Kumar; Parthasarathy, Harish; Gautam, Kumar

2016-06-01

The aim of this paper is to design a current source obtained as a representation of p information symbols \\{I_k\\} so that the electromagnetic (EM) field generated interacts with a quantum atomic system producing after a fixed duration T a unitary gate U( T) that is as close as possible to a given unitary gate U_g. The design procedure involves calculating the EM field produced by \\{I_k\\} and hence the perturbing Hamiltonian produced by \\{I_k\\} finally resulting in the evolution operator produced by \\{I_k\\} up to cubic order based on the Dyson series expansion. The gate error energy is thus obtained as a cubic polynomial in \\{I_k\\} which is minimized using gravitational search algorithm. The signal to noise ratio (SNR) in the designed gate is higher as compared to that using quadratic Dyson series expansion. The SNR is calculated as the ratio of the Frobenius norm square of the desired gate to that of the desired gate error.

Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

PubMed

Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

2012-06-06

Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Analog and RF performance of a multigate FinFET at nano scale

NASA Astrophysics Data System (ADS)

Kumar, Abhishek

2016-12-01

In this paper, analog and RF performance of the Fin field effect transistor (FET) at Nano scale is observed through 3D simulation. FinFET devices like rectangular gate all around (RE-GAA) FinFET, cylindrical gate all around (CY-GAA) FinFET and triple gate (TG) FinFET are observed. The figure of merit (FOMs) such as input-output characteristics, trans-conductance (gm), output-conductance (gd), intrinsic gain (gm/gd), gate capacitance (gate to source and total gate capacitance), unity gain cut-off frequency (ft), trans-conductance generation factor (TGF), gain frequency product (GFP), gain bandwidth product (GBP) and gain transconductance frequency product (GTFP) are observed. The analog performance of a FinFETs are observed by realising source follower circuit with NMOS transistor as a current source. The source follower circuit gain is observed. It has been observed that maximum capacitance is observed in case gate all around condition. Rectangular gate all around has the highest transconductance. In the source follower circuit, the gain curve (Vout/Vin) is sharper for TG-FinFET.

Gates Travels to Asia - November 5, 2007: Department of Defense Special

Science.gov Websites

Robert M. Gates and Japanese Defense Minister Shigeru Ishiba met here today to discuss the Japanese war dead today and met with South Korean defense leaders to discuss the strong U.S.-Korean alliance civilian and military leaders. Gates and his delegation will discuss a full range of regional and global

Measurement of the electronic compressibility of bilayer graphene

NASA Astrophysics Data System (ADS)

Henriksen, E. A.; Eisenstein, J. P.

2010-03-01

We report on recent measurements of the electronic compressibility in bilayer graphene. The devices consist of a mechanically exfoliated bilayer graphene flake in a dual-gated configuration, having a global back gate from the underlying Si substrate and a lithographically defined top gate. With suitable shielding, an oscillating voltage applied to the back gate will generate corresponding signals in the top gate only via electric fields which penetrate the graphene, thereby allowing a direct measurement of the compressibility of the bilayer [1]. In our experiments, we map this quantity as a function of the back and top gate bias voltages and compare it to similar maps of the graphene sheet resistivity and capacitance. We discuss our results in light of numerical calculations of the underlying band structure as well as recent theoretical predictions. [1] J. P. Eisenstein, L. N. Pfeiffer, K. W. West, Phys. Rev. B 50, 1760 (1994).

Evolutionarily conserved intracellular gate of voltage-dependent sodium channels

NASA Astrophysics Data System (ADS)

Oelstrom, Kevin; Goldschen-Ohm, Marcel P.; Holmgren, Miguel; Chanda, Baron

2014-03-01

Members of the voltage-gated ion channel superfamily (VGIC) regulate ion flux and generate electrical signals in excitable cells by opening and closing pore gates. The location of the gate in voltage-gated sodium channels, a founding member of this superfamily, remains unresolved. Here we explore the chemical modification rates of introduced cysteines along the S6 helix of domain IV in an inactivation-removed background. We find that state-dependent accessibility is demarcated by an S6 hydrophobic residue; substituted cysteines above this site are not modified by charged thiol reagents when the channel is closed. These accessibilities are consistent with those inferred from open- and closed-state structures of prokaryotic sodium channels. Our findings suggest that an intracellular gate composed of a ring of hydrophobic residues is not only responsible for regulating access to the pore of sodium channels, but is also a conserved feature within canonical members of the VGIC superfamily.

Resonantly driven CNOT gate for electron spins.

PubMed

Zajac, D M; Sigillito, A J; Russ, M; Borjans, F; Taylor, J M; Burkard, G; Petta, J R

2018-01-26

Single-qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. Although high-fidelity single-qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been challenging because of rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities greater than 99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 nanoseconds. We used the CNOT gate to generate a Bell state with 78% fidelity (corrected for errors in state preparation and measurement). Our quantum dot device architecture enables multi-qubit algorithms in silicon. Copyright © 2018, The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Fabrication of quantum dots in undoped Si/Si 0.8Ge 0.2 heterostructures using a single metal-gate layer

DOE PAGES

Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

2016-08-01

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

Implementing quantum logic gates with gradient ascent pulse engineering: principles and practicalities.

PubMed

Rowland, Benjamin; Jones, Jonathan A

2012-10-13

We briefly describe the use of gradient ascent pulse engineering (GRAPE) pulses to implement quantum logic gates in nuclear magnetic resonance quantum computers, and discuss a range of simple extensions to the core technique. We then consider a range of difficulties that can arise in practical implementations of GRAPE sequences, reflecting non-idealities in the experimental systems used.

Photo-electronic current transport in back-gated graphene transistor

NASA Astrophysics Data System (ADS)

Srivastava, Ashok; Chen, Xinlu; Pradhan, Aswini K.

2017-04-01

In this work, we have studied photo-electronic current transport in a back-gated graphene field-effect transistor. Under the light illumination, band bending at the metal/graphene interface develops a built-in potential which generates photonic current at varying back-gate biases. A typical MOSFET type back-gated transistor structure uses a monolayer graphene as the channel layer formed over the silicon dioxide/silicon substrate. It is shown that the photo-electronic current consists of current contributions from photovoltaic, photo-thermoelectric and photo-bolometric effects. A maximum external responsivity close to 0.0009A/W is achieved at 30μW laser power source and 633nm wavelength.

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

NASA Astrophysics Data System (ADS)

Westerhout, R. J.; Musca, C. A.; Antoszewski, J.; Dell, J. M.; Faraone, L.

2007-08-01

In this work, gated midwave infrared (MWIR) Hg1 x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 × 1016 cm-3 and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1 5 × 104 Ωcm2 with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 × 106 Ωcm2, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = α I β f -0.5 trend was observed above 200 pA reverse bias dark current, with α = 3.5 × 10-5 and β = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, X; Hu, YH; Grinthal, A

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling ismore » nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hou, Xu; Hu, Yuhang; Grinthal, Alison

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems 1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries 6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect,more » and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

NASA Astrophysics Data System (ADS)

Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

2015-03-01

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems. But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable. Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold--the pressure needed to open the pores--can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

DOE PAGES

Hou, Xu; Hu, Yuhang; Grinthal, Alison; ...

2015-03-04

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems 1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries 6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect,more » and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour.

PubMed

Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

2015-03-05

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems. But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable. Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

Fast quantum logic gates with trapped-ion qubits

NASA Astrophysics Data System (ADS)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

Fast quantum logic gates with trapped-ion qubits.

PubMed

Schäfer, V M; Ballance, C J; Thirumalai, K; Stephenson, L J; Ballance, T G; Steane, A M; Lucas, D M

2018-02-28

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural 'speed limit' of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds-less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually associated with solid-state devices.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Technical Reports Server (NTRS)

Sewell, James S.; Bozada, Christopher A.

1994-01-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

NASA Astrophysics Data System (ADS)

Sewell, James S.; Bozada, Christopher A.

1994-02-01

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

78 FR 21924 - Alabama Power Company; Notice of Application for Amendment of License and Soliciting Comments...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-12

... approval to replace the Unit 4 turbine at the Jordan Dam Project. Specifically, the licensee proposes the following work: complete turbine replacement, wicket gate system rehabilitation or replacement, gate stem bushing replacement, turbine and generator bearing refurbishment, and related component replacement. The...

Evolving autonomous learning in cognitive networks.

PubMed

Sheneman, Leigh; Hintze, Arend

2017-12-01

There are two common approaches for optimizing the performance of a machine: genetic algorithms and machine learning. A genetic algorithm is applied over many generations whereas machine learning works by applying feedback until the system meets a performance threshold. These methods have been previously combined, particularly in artificial neural networks using an external objective feedback mechanism. We adapt this approach to Markov Brains, which are evolvable networks of probabilistic and deterministic logic gates. Prior to this work MB could only adapt from one generation to the other, so we introduce feedback gates which augment their ability to learn during their lifetime. We show that Markov Brains can incorporate these feedback gates in such a way that they do not rely on an external objective feedback signal, but instead can generate internal feedback that is then used to learn. This results in a more biologically accurate model of the evolution of learning, which will enable us to study the interplay between evolution and learning and could be another step towards autonomously learning machines.

Efficient quantum circuits for one-way quantum computing.

PubMed

Tanamoto, Tetsufumi; Liu, Yu-Xi; Hu, Xuedong; Nori, Franco

2009-03-13

While Ising-type interactions are ideal for implementing controlled phase flip gates in one-way quantum computing, natural interactions between solid-state qubits are most often described by either the XY or the Heisenberg models. We show an efficient way of generating cluster states directly using either the imaginary SWAP (iSWAP) gate for the XY model, or the sqrt[SWAP] gate for the Heisenberg model. Our approach thus makes one-way quantum computing more feasible for solid-state devices.

Helical prospective ECG-gating in cardiac computed tomography: radiation dose and image quality.

PubMed

DeFrance, Tony; Dubois, Eric; Gebow, Dan; Ramirez, Alex; Wolf, Florian; Feuchtner, Gudrun M

2010-01-01

Helical prospective ECG-gating (pECG) may reduce radiation dose while maintaining the advantages of helical image acquisition for coronary computed tomography angiography (CCTA). Aim of this study was to evaluate helical pECG-gating in CCTA in regards to radiation dose and image quality. 86 patients undergoing 64-multislice CCTA were enrolled. pECG-gating was performed in patients with regular heart rates (HR) < 65 bpm; with the gating window set at 70-85% of the cardiac cycle. All patients received oral and some received additional IV beta-blockers to achieve HR < 65 bpm. In patients with higher or irregular HR, or for functional evaluation, retrospective ECG-gating (rECG) was performed. The average X-ray dose was estimated from the dose length product. Each arterial segment (modified AHA/ACC 17-segment-model) was evaluated on a 4-point image quality scale (4 = excellent; 3 = good, mild artefact; 2 = acceptable, some artefact, 1 = uninterpretable). pECG-gating was applied in 57 patients, rECG-gating in 29 patients. There was no difference in age, gender, body mass index, scan length or tube output settings between both groups. HR in the pECG-group was 54.7 bpm (range, 43-64). The effective radiation dose was significantly lower for patients scanned with pECG-gating with mean 6.9 mSv +/- 1.9 (range, 2.9-10.7) compared to rECG with 16.9 mSv +/- 4.1 (P < 0.001), resulting in a mean dose reduction of 59.2%. For pECG-gating, out of 969 coronary segments, 99.3% were interpretable. Image quality was excellent in 90.2%, good in 7.8%, acceptable in 1.3% and non-interpretable in 0.7% (n = 7 segments). For patients with steady heart rates <65 bpm, helical prospective ECG-gating can significantly lower the radiation dose while maintaining high image quality.

Anisotropic Negative Differential Resistance in Monolayer Black Phosphorus

NASA Astrophysics Data System (ADS)

Zhang, Wanting; Kang, Peng; Chen, Huahui

2018-01-01

The tremendous potential application in emerging two-dimensional layered materials such as black phosphorus (BP) has attracted great attention as nanoscale devices. In this paper, the effect of anisotropic negative differential resistance (NDR) in monolayer black phosphorus field-effect transistors (FETs) is reported by the first-principles computational study based on the non-equilibrium Green’s function approach combined with density functional theory. The transport properties including current-voltage (I-V) relation and transmission spectrum of monolayer BP are investigated at different gate voltages (Vg). Further studies indicate that NDR occurs at a specific gate voltage in the armchair direction rather than in the zigzag direction. The decrease of current in I-V characteristics can be understood from the generation of non-conducting states region moving towards the Fermi level resulting in a reduction of the integration within corresponding energy range in the transmission spectrum. Our results offer useful guidance for designing FETs and other potential applications in nanoelectronic devices based on BP.

Southeastern United States wood pellets as a global energy resource: a cradle-to-gate life cycle assessment derived from empirical data

NASA Astrophysics Data System (ADS)

Morrison, Brandon; Golden, Jay S.

2018-02-01

Given increased policies driving renewable electricity generation and insufficient local production of woody biomass, many countries are reliant upon the importation of wood pellets. Of current wood pellet exports, the vast majority originates from the Southeastern United States (US). In this paper we present results from a cradle-to-gate, attributional process life cycle assessment in which two production scenarios of wood pellets were modelled for the Southeastern US: one utilising roundwood from a silviculture operation and the other utilising sawmill residues. The system boundary includes all steps from harvesting of the wood biomass, through delivery of the finished wood pellets to a US port facility. For each of the impact categories assessed, wood pellets from sawmill residues resulted in higher values, ranging from 5% to 31%. In relation to Global Warming Potential, roundwood pellets resulted in a 13-21% lower value than pellets produced from sawmill residues, depending upon the allocation method.

A hybrid life cycle inventory of nano-scale semiconductor manufacturing.

PubMed

Krishnan, Nikhil; Boyd, Sarah; Somani, Ajay; Raoux, Sebastien; Clark, Daniel; Dornfeld, David

2008-04-15

The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive, and generate significant waste. It is important to understand and reduce the environmental impacts of semiconductor manufacturing because these devices are ubiquitous components in electronics. Furthermore, the fabrication processes used in the semiconductor industry are finding increasing application in other products, such as microelectromechanical systems (MEMS), flat panel displays, and photovoltaics. In this work we develop a library of typical gate-to-gate materials and energy requirements, as well as emissions associated with a complete set of fabrication process models used in manufacturing a modern microprocessor. In addition, we evaluate upstream energy requirements associated with chemicals and materials using both existing process life cycle assessment (LCA) databases and an economic input-output (EIO) model. The result is a comprehensive data set and methodology that may be used to estimate and improve the environmental performance of a broad range of electronics and other emerging applications that involve nano and micro fabrication.

DETAIL OF VALVE TOWER SHOWING SLUICE GATE ON EAST SIDE ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

DETAIL OF VALVE TOWER SHOWING SLUICE GATE ON EAST SIDE OF TOWER. VIEW FACING WEST - Schofield Barracks Military Reservation, Ku Tree Reservoir, Valve Tower, Kalakoa Stream, East Range, Wahiawa, Honolulu County, HI

Measurements and sensitivities of LWR in poly spacers

NASA Astrophysics Data System (ADS)

Ayal, Guy; Shauly, Eitan; Levi, Shimon; Siany, Amit; Adan, Ofer; Shacham-Diamand, Yosi

2010-03-01

LER and LWR have long been considered a primary issue in process development and monitoring. Development of a low power process flavors emphasizes the effect of LER, LWR on different aspects of the device. Gate level performance, particularly leakage current at the front end of line, resistance and reliability in the back-end layers. Traditionally as can be seen in many publications, for the front end of line the focus is mainly on Poly and Active area layers. Poly spacers contribution to the gate leakage, for example, is rarely discussed. Following our research done on sources of gate leakage, we found leakage current (Ioff) in some processes to be highly sensitive to changes in the width of the Poly spacers - even more strongly to the actual Poly gate CDs. Therefore we decided to measure Poly spacers LWR, its correlation to the LWR in the poly, and its sensitivity to changes in layout and OPC. In our last year publication, we defined the terms LLER (Local Line Edge Roughness) and LLWR (Local Line Width Roughness). The local roughness is measured as the 3-sigma value of the line edge/width in a 5-nm segment around the measurement point. We will use these terms in this paper to evaluate the Poly roughness impact on Poly spacer's roughness. A dedicated test chip was designed for the experiments, having various transistors layout configurations with different densities to cover the all range of process design rules. Applied Materials LER and LWR innovative algorithms were used to measure and characterize the spacer roughness relative to the distance from the active edges and from other spaces. To accurately measure all structures in a reasonable time, the recipes were automatically generated from CAD. On silicon, after poly spacers generation, the transistors no longer resemble the Poly layer CAD layout, their morphology is different compared with Photo/Etch traditional structures , and dimensions vary significantly. In this paper we present metrology and characterization of poly spacer LLWR and LLER compared to that of the poly gate in various transistor shapes, showing that the relation between them depends on the transistor architecture (final layout, including OPC). We will show how the spacer deposition may reduce, keep or even enlarge the roughness measured on Poly, depending on transistor layout , but surprisingly, not dependent on proximity effects.

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

NASA Astrophysics Data System (ADS)

Yu, Kyeong Min; Bae, Byung Seong; Jung, Myunghee; Yun, Eui-Jung

2016-06-01

We investigate the effects of high temperatures in the range of 292 - 393 K on the electrical properties of solution-processed amorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operated in the saturation region. The fabricated a-ZTO TFTs have a non-patterned bottom gate and top contact structure, and they use a heavily-doped Si wafer and SiO2 as a gate electrode and a gate insulator layer, respectively. In a-ZTO TFTs, the trap release energy ( E TR ) was deduced by using Maxwell-Boltzmann statistics. The decreasing E TR toward zero with increasing gate voltage (the density of trap states ( n s )) in the a-ZTO active layer can be attributed to a shift of the Fermi level toward the mobility edge with increasing gate voltage. The TFTs with low gate voltage (low n s ) exhibit multiple trap and release characteristics and show thermally-activated behavior. In TFTs with a high gate voltage (high n s ), however, we observe decreasing mobility and conductivity with increasing temperature at temperatures ranging from 303 to 363 K. This confirms that the E TR can drop to zero, indicating a shift of the Fermi level beyond the mobility edge. Hence, the mobility edge is detected at the cusp between thermally-activated transport and band transport.

Ultralow-power organic complementary circuits.

PubMed

Klauk, Hagen; Zschieschang, Ute; Pflaum, Jens; Halik, Marcus

2007-02-15

The prospect of using low-temperature processable organic semiconductors to implement transistors, circuits, displays and sensors on arbitrary substrates, such as glass or plastics, offers enormous potential for a wide range of electronic products. Of particular interest are portable devices that can be powered by small batteries or by near-field radio-frequency coupling. The main problem with existing approaches is the large power consumption of conventional organic circuits, which makes battery-powered applications problematic, if not impossible. Here we demonstrate an organic circuit with very low power consumption that uses a self-assembled monolayer gate dielectric and two different air-stable molecular semiconductors (pentacene and hexadecafluorocopperphthalocyanine, F16CuPc). The monolayer dielectric is grown on patterned metal gates at room temperature and is optimized to provide a large gate capacitance and low gate leakage currents. By combining low-voltage p-channel and n-channel organic thin-film transistors in a complementary circuit design, the static currents are reduced to below 100 pA per logic gate. We have fabricated complementary inverters, NAND gates, and ring oscillators that operate with supply voltages between 1.5 and 3 V and have a static power consumption of less than 1 nW per logic gate. These organic circuits are thus well suited for battery-powered systems such as portable display devices and large-surface sensor networks as well as for radio-frequency identification tags with extended operating range.

Graph state generation with noisy mirror-inverting spin chains

NASA Astrophysics Data System (ADS)

Clark, Stephen R.; Klein, Alexander; Bruderer, Martin; Jaksch, Dieter

2007-06-01

We investigate the influence of noise on a graph state generation scheme which exploits a mirror inverting spin chain. Within this scheme the spin chain is used repeatedly as an entanglement bus (EB) to create multi-partite entanglement. The noise model we consider comprises of each spin of this EB being exposed to independent local noise which degrades the capabilities of the EB. Here we concentrate on quantifying its performance as a single-qubit channel and as a mediator of a two-qubit entangling gate, since these are basic operations necessary for graph state generation using the EB. In particular, for the single-qubit case we numerically calculate the average channel fidelity and whether the channel becomes entanglement breaking, i.e. expunges any entanglement the transferred qubit may have with other external qubits. We find that neither local decay nor dephasing noise cause entanglement breaking. This is in contrast to local thermal and depolarizing noise where we determine a critical length and critical noise coupling, respectively, at which entanglement breaking occurs. The critical noise coupling for local depolarizing noise is found to exhibit a power-law dependence on the chain length. For two-qubits we similarly compute the average gate fidelity and whether the ability for this gate to create entanglement is maintained. The concatenation of these noisy gates for the construction of a five-qubit linear cluster state and a Greenberger Horne Zeilinger state indicates that the level of noise that can be tolerated for graph state generation is tightly constrained.

Optical NOR gate

DOEpatents

Skogen, Erik J [Albuquerque, NM; Tauke-Pedretti, Anna [Albuquerque, NM

2011-09-06

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Prokop, Norman F. (Inventor); Krasowski, Michael J. (Inventor)

2016-01-01

Embodiments of the present invention describe an apparatus including an oscillator, a ramp generator, and an inverter. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator is configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time, a measurement of a current and a voltage of the solar cell is performed. During the high time, a measurement of a current of a shorted cell and a voltage reference is performed.

Nine-channel mid-power bipolar pulse generator based on a field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haylock, Ben, E-mail: benjamin.haylock2@griffithuni.edu.au; Lenzini, Francesco; Kasture, Sachin

Many channel arbitrary pulse sequence generation is required for the electro-optic reconfiguration of optical waveguide networks in Lithium Niobate. Here we describe a scalable solution to the requirement for mid-power bipolar parallel outputs, based on pulse patterns generated by an externally clocked field programmable gate array. Positive and negative pulses can be generated at repetition rates up to 80 MHz with pulse width adjustable in increments of 1.6 ns across nine independent outputs. Each channel can provide 1.5 W of RF power and can be synchronised with the operation of other components in an optical network such as light sourcesmore » and detectors through an external clock with adjustable delay.« less

Magnetoresistance effect of heat generation in a single-molecular spin-valve

NASA Astrophysics Data System (ADS)

Jiang, Feng; Yan, Yonghong; Wang, Shikuan; Yan, Yijing

2016-02-01

Based on non-equilibrium Green's functions' theory and small polaron transformation's technology, we study the heat generation by current through a single-molecular spin-valve. Numerical results indicate that the variation of spin polarization degree can change heat generation effectively, the spin-valve effect happens not only in electrical current but also in heat generation when Coulomb repulsion in quantum dot is smaller than phonon frequency and interestingly, when Coulomb repulsion is larger than phonon frequency, the inverse spin-valve effect appears by sweeping gate voltage and is enlarged with bias increasing. The inverse spin-valve effect will induce the unique heat magnetoresistance effect, which can be modulated from heat-resistance to heat-gain by gate voltage easily.

Computer Generated Holography with Intensity-Graded Patterns

PubMed Central

Conti, Rossella; Assayag, Osnath; de Sars, Vincent; Guillon, Marc; Emiliani, Valentina

2016-01-01

Computer Generated Holography achieves patterned illumination at the sample plane through phase modulation of the laser beam at the objective back aperture. This is obtained by using liquid crystal-based spatial light modulators (LC-SLMs), which modulate the spatial phase of the incident laser beam. A variety of algorithms is employed to calculate the phase modulation masks addressed to the LC-SLM. These algorithms range from simple gratings-and-lenses to generate multiple diffraction-limited spots, to iterative Fourier-transform algorithms capable of generating arbitrary illumination shapes perfectly tailored on the base of the target contour. Applications for holographic light patterning include multi-trap optical tweezers, patterned voltage imaging and optical control of neuronal excitation using uncaging or optogenetics. These past implementations of computer generated holography used binary input profile to generate binary light distribution at the sample plane. Here we demonstrate that using graded input sources, enables generating intensity graded light patterns and extend the range of application of holographic light illumination. At first, we use intensity-graded holograms to compensate for LC-SLM position dependent diffraction efficiency or sample fluorescence inhomogeneity. Finally we show that intensity-graded holography can be used to equalize photo evoked currents from cells expressing different levels of chanelrhodopsin2 (ChR2), one of the most commonly used optogenetics light gated channels, taking into account the non-linear dependence of channel opening on incident light. PMID:27799896

Optical NAND gate

DOEpatents

Skogen, Erik J [Albuquerque, NM; Raring, James [Goleta, CA; Tauke-Pedretti, Anna [Albuquerque, NM

2011-08-09

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Genetic programs constructed from layered logic gates in single cells

PubMed Central

Moon, Tae Seok; Lou, Chunbo; Tamsir, Alvin; Stanton, Brynne C.; Voigt, Christopher A.

2014-01-01

Genetic programs function to integrate environmental sensors, implement signal processing algorithms and control expression dynamics1. These programs consist of integrated genetic circuits that individually implement operations ranging from digital logic to dynamic circuits2–6, and they have been used in various cellular engineering applications, including the implementation of process control in metabolic networks and the coordination of spatial differentiation in artificial tissues. A key limitation is that the circuits are based on biochemical interactions occurring in the confined volume of the cell, so the size of programs has been limited to a few circuits1,7. Here we apply part mining and directed evolution to build a set of transcriptional AND gates in Escherichia coli. Each AND gate integrates two promoter inputs and controls one promoter output. This allows the gates to be layered by having the output promoter of an upstream circuit serve as the input promoter for a downstream circuit. Each gate consists of a transcription factor that requires a second chaperone protein to activate the output promoter. Multiple activator–chaperone pairs are identified from type III secretion pathways in different strains of bacteria. Directed evolution is applied to increase the dynamic range and orthogonality of the circuits. These gates are connected in different permutations to form programs, the largest of which is a 4-input AND gate that consists of 3 circuits that integrate 4 inducible systems, thus requiring 11 regulatory proteins. Measuring the performance of individual gates is sufficient to capture the behaviour of the complete program. Errors in the output due to delays (faults), a common problem for layered circuits, are not observed. This work demonstrates the successful layering of orthogonal logic gates, a design strategy that could enable the construction of large, integrated circuits in single cells. PMID:23041931

Selenium and Other Elements in Water and Adjacent Rock and Sediment of Toll Gate Creek, Aurora, Arapahoe County, Colorado, December 2003 through March 2004

USGS Publications Warehouse

Herring, J.R.; Walton-Day, Katherine

2007-01-01

Streamwater and solid samples (rock, unconsolidated sediment, stream sediment, and efflorescent material) in the Toll Gate Creek watershed, Colorado, were collected and analyzed for major and trace elements to determine trace-element concentrations and stream loads from December 2003 through March 2004, a period of seasonally low flow. Special emphasis was given to selenium (Se) concentrations because historic Se concentrations exceeded current (2004) stream standards. The goal of the project was to assess the distribution of Se concentration and loads in Toll Gate Creek and to determine the potential for rock and unconsolidated sediment in the basin to be sources of Se to the streamwater. Streamwater samples and discharge measurements were collected during December 2003 and March 2004 along Toll Gate Creek and its two primary tributaries - West Toll Gate Creek and East Toll Gate Creek. During both sampling periods, discharge ranged from 2.5 liters per second to 138 liters per second in the watershed. Discharge was greater in March 2004 than December 2003, but both periods represent low flow in Toll Gate Creek, and results of this study should not be extended to periods of higher flow. Discharge decreased moving downstream in East Toll Gate Creek but increased moving downstream along West Toll Gate Creek and the main stem of Toll Gate Creek, indicating that these two streams gain flow from ground water. Se concentrations in streamwater samples ranged from 7 to 70 micrograms per liter, were elevated in the upstream-most samples, and were greater than the State stream standard of 4.6 micrograms per liter. Se loads ranged from 6 grams per day to 250 grams per day, decreased in a downstream direction along East Toll Gate Creek, and increased in a downstream direction along West Toll Gate Creek and Toll Gate Creek. The largest Se-load increases occurred between two sampling locations on West Toll Gate Creek during both sampling periods and between the two sampling locations on the main stem of Toll Gate Creek during the December 2003 sampling. These load increases may indicate that sources of Se exist between these two locations; however, Se loading along West Toll Gate Creek and Toll Gate Creek primarily was characterized by gradual downstream increases in load. Linear regressions between Se load and discharge for both sampling periods had large, significant values of r2 (r2 > 0.96, p < 0.0001) because increases in Se load (per unit of flow increase) were generally constant. This relation is evidence for a constant addition of water having a relatively constant Se concentration over much of the length of Toll Gate Creek, a result which is consistent with a ground-water source for the Se loads. Rock outcroppings along the stream were highly weathered, and Se concentrations in rock and other solid samples ranged from below detection (1 part per million) to 25 parts per million. One sample of efflorescence (a surface encrustation produced by evaporation) had the greatest selenium concentration of all solid samples, was composed of thenardite (sodium sulfate), gypsum (calcium sulfate) and minor halite (sodium chloride), and released all of its Se during a 30-minute water-leaching procedure. Calculations indicate there was an insufficient amount of this material present throughout the watershed to account for the observed Se load in the stream. However, this material likely indicates zones of ground-water discharge that contain Se. This report did not identify an unequivocal source of Se in Toll Gate Creek. However, multiple lines of evidence indicate that ground-water discharge supplies Se to Toll Gate Creek: (1) the occurrence of elevated Se concentrations in the stream throughout the watershed and in the headwater regions, upstream from industrial sources; (2) the progressive increase in Se loads moving downstream, which indicates a continuous input of Se along the stream rather than input from point sources; (3) the occurr

Electro-optic modulator based gate transient suppression for sine-wave gated InGaAs/InP single photon avalanche photodiode

NASA Astrophysics Data System (ADS)

Zhang, Yixin; Zhang, Xuping; Shi, Yuanlei; Ying, Zhoufeng; Wang, Shun

2014-06-01

Capacitive gate transient noise has been problematic for the high-speed single photon avalanche photodiode (SPAD), especially when the operating frequency extends to the gigahertz level. We proposed an electro-optic modulator based gate transient noise suppression method for sine-wave gated InGaAs/InP SPAD. With the modulator, gate transient is up-converted to its higher-order harmonics that can be easily removed by low pass filtering. The proposed method enables online tuning of the operating rate without modification of the hardware setup. At 250 K, detection efficiency of 14.7% was obtained with 4.8×10-6 per gate dark count and 3.6% after-pulse probabilities for 1550-nm optical signal under 1-GHz gating frequency. Experimental results have shown that the performance of the detector can be maintained within a designated frequency range from 0.97 to 1.03 GHz, which is quite suitable for practical high-speed SPAD applications operated around the gigahertz level.

Multi-element germanium detectors for synchrotron applications

DOE PAGES

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.; ...

2018-04-27

In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

Multi-element germanium detectors for synchrotron applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rumaiz, A. K.; Kuczewski, A. J.; Mead, J.

In this paper, we have developed a series of monolithic multi-element germanium detectors, based on sensor arrays produced by the Forschungzentrum Julich, and on Application-specific integrated circuits (ASICs) developed at Brookhaven. Devices have been made with element counts ranging from 64 to 384. These detectors are being used at NSLS-II and APS for a range of diffraction experiments, both monochromatic and energy-dispersive. Compact and powerful readout systems have been developed, based on the new generation of FPGA system-on-chip devices, which provide closely coupled multi-core processors embedded in large gate arrays. Finally, we will discuss the technical details of the systems,more » and present some of the results from them.« less

A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element

NASA Astrophysics Data System (ADS)

Wang, Han; Gou, Chao; Luo, Kai

2017-04-01

This paper presents a fully on-chip NMOS low-dropout regulator (LDO) for portable applications with quasi floating gate pass element and fast transient response. The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump, which allows the charge pump to be a small economical circuit with small silicon area. In addition, a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and {I}{{Q}} of 395 μA. Under full-range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV, respectively.

New designs of a complete set of Photonic Crystals logic gates

NASA Astrophysics Data System (ADS)

Hussein, Hussein M. E.; Ali, Tamer A.; Rafat, Nadia H.

2018-03-01

In this paper, we introduce new designs of all-optical OR, AND, XOR, NOT, NOR, NAND and XNOR logic gates based on the interference effect. The designs are built using 2D square lattice Photonic Crystal (PhC) structure of dielectric rods embedded in air background. The lattice constant, a, and the rod radius, r, are designed to achieve maximum operating range of frequencies using the gap map. We use the Plane Wave Expansion (PWE) method to obtain the band structure and the gap map of the proposed designs. The operating wavelengths achieve a wide band range that varies between 1266.9 nm and 1996 nm with center wavelength at 1550 nm. The Finite-Difference Time-Domain (FDTD) method is used to study the field behavior inside the PhC gates. The gates satisfy their truth tables with reasonable power contrast ratio between logic '1' and logic '0'.

A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si1- x O2 Gate dielectric and improved electrical and hysteresis performance

NASA Astrophysics Data System (ADS)

Hung, Chien-Hsiung; Wang, Shui-Jinn; Liu, Pang-Yi; Wu, Chien-Hung; Wu, Nai-Sheng; Yan, Hao-Ping; Lin, Tseng-Hsing

2017-04-01

The use of co-sputtered zirconium silicon oxide (Zr x Si1- x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is proposed and demonstrated. With the sputtering power of the SiO2 target in the range of 0-150 W and with that of the ZrO2 target kept at 100 W, a dielectric constant ranging from approximately 28.1 to 7.8 is obtained. The poly-structure formation immunity of the Zr x Si1- x O2 dielectrics, reduction of the interface trap density suppression, and gate leakage current are examined. Our experimental results reveal that the Zr0.85Si0.15O2 gate dielectric can lead to significantly improved TFT subthreshold swing performance (103 mV/dec) and field effect mobility (33.76 cm2 V-1 s-1).

Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

NASA Astrophysics Data System (ADS)

An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

2016-11-01

Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

Solid state circuit controls direction, speed, and braking of dc motor

NASA Technical Reports Server (NTRS)

Hanna, M. F.

1966-01-01

Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

Energy saving in ac generators

NASA Technical Reports Server (NTRS)

Nola, F. J.

1980-01-01

Circuit cuts no-load losses, without sacrificing full-load power. Phase-contro circuit includes gate-controlled semiconductor switch that cuts off applied voltage for most of ac cycle if generator idling. Switch "on" time increases when generator is in operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stephen Seong Lee

Fuel flow to individual burners is complicated and difficult to determine on coal fired boilers, since coal solids were transported in a gas suspension that is governed by the complex physics of two-phase flow. The objectives of the project were the measurements of suspended coal solids-flows in the simulated test conditions. Various extractive methods were performed manually and can give only a snapshot result of fuel distribution. In order to measure particle diameter & velocity, laser based phase-Doppler particle analyzer (PDPA) and particle image velocimetry (PIV) were carefully applied. Statistical methods were used to analyze particle characteristics to see whichmore » factors have significant effect. The transparent duct model was carefully designed and fabricated for the laser-based-instrumentation of solids-flow monitoring (LISM). The experiments were conducted with two different kinds of particles with four different particle diameters. The particle types were organic particles and saw dust particles with the diameter range of 75-150 micron, 150-250 micron, 250-355 micron and 355-425 micron. The densities of the particles were measured to see how the densities affected the test results. Also the experiment was conducted with humid particles and fog particles. To generate humid particles, the humidifier was used. A pipe was connected to the humidifier to lead the particle flow to the intersection of the laser beam. The test results of the particle diameter indicated that, the mean diameter of humid particles was between 6.1703 microns and 6.6947 microns when the humid particle flow was low. When the humid particle flow was high, the mean diameter was between 6.6728 microns and 7.1872 microns. The test results of the particle mean velocity indicated that the mean velocity was between 1.3394 m/sec and 1.4556 m/sec at low humid particle flow. When the humid particle flow was high, the mean velocity was between 1.5694 m/sec and 1.7856 m/sec. The Air Flow Module, TQ AF 17 and shell ondina oil were used to generate fog particles. After the oil was heated inside the fog generator, the blower was used to generate the fog. The fog flew along the pipe to the intersection of the laser beam. The mean diameter of the fog particles was 5.765 microns. Compared with the humid particle diameter, we observed that the mean diameter of the fog particles was smaller than the humid particles. The test results of particle mean velocity was about 3.76 m/sec. Compared with the mean velocity of the humid particles, we can observed the mean velocity of fog particles were greater than humid particles. The experiments were conducted with four different kinds of particles with five different particle diameters. The particle types were organic particles, coal particles, potato particles and wheat particles with the diameter range of 63-75 micron, less than 150 micron, 150-250 micron, 250-355 micron and 355-425 micron. To control the flow rate, the control gate of the particle dispensing hopper was adjusted to 1/16 open rate, 1/8 open rate and 1/4 open rate. The captured image range was 0 cm to 5 cm from the control gate, 5 cm to 10 cm from the control gate and 10 cm to 15 cm from the control gate. Some of these experiments were conducted under both open environment conditions and closed environment conditions. Thus these experiments had a total of five parameters which were type of particles, diameter of particles, flow rate, observation range, and environment conditions. The coal particles (diameter between 63 and 75 microns) tested under the closed environment condition had three factors that were considered as the affecting factors. They were open rate, observation range, and environment conditions. In this experiment, the interaction of open rate and observation range had a significant effect on the lower limit. On the upper limit, the open rate and environment conditions had a significant effect. In addition, the interaction of open rate and environment conditions had a significant effect. The coal particles tested (diameter between 63 and 75 microns) under open environment, two factors were that considered as the affecting factors. They were the open rate and observation ranges. In this experiment, there was no significant effect on the lower limit. On the upper limit, the observation range had a significant effect. In addition, the interaction of open rate and observation range had a significant effect for the source of variation with 95% of confidence based on analysis of variance (ANOVA) results.« less

UWB dual burst transmit driver

DOEpatents

Dallum, Gregory E [Livermore, CA; Pratt, Garth C [Discovery Bay, CA; Haugen, Peter C [Livermore, CA; Zumstein, James M [Livermore, CA; Vigars, Mark L [Livermore, CA; Romero, Carlos E [Livermore, CA

2012-04-17

A dual burst transmitter for ultra-wideband (UWB) communication systems generates a pair of precisely spaced RF bursts from a single trigger event. An input trigger pulse produces two oscillator trigger pulses, an initial pulse and a delayed pulse, in a dual trigger generator. The two oscillator trigger pulses drive a gated RF burst (power output) oscillator. A bias driver circuit gates the RF output oscillator on and off and sets the RF burst packet width. The bias driver also level shifts the drive signal to the level that is required for the RF output device.

Polarization-insensitive ultralow-power second-harmonic generation frequency-resolved optical gating.

PubMed

Miao, Houxun; Weiner, Andrew M; Langrock, Carsten; Roussev, Rostislav V; Fejer, Martin M

2007-04-01

We demonstrate polarization-insensitive ultralow-power second-harmonic generation frequency-resolved optical gating (FROG) measurements with a fiber-pigtailed, aperiodically poled lithium niobate waveguide. By scrambling the polarization much faster than the measurement integration time, we eliminate the impairment that frequency-independent random polarization fluctuations induce in FROG measurements. As a result we are able to retrieve intensity and phase profiles of few hundred femtosecond optical pulses with 50 MHz repetition rates at 5.2 nW coupled average power without control of the input polarization.

Experimental investigation of a four-qubit linear-optical quantum logic circuit

NASA Astrophysics Data System (ADS)

Stárek, R.; Mičuda, M.; Miková, M.; Straka, I.; Dušek, M.; Ježek, M.; Fiurášek, J.

2016-09-01

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C3Z gate and several two-qubit and single-qubit gates. The C3Z gate introduces a sign flip if and only if all four qubits are in the computational state |1>. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses.

Voltage-Gated Potassium Channels: A Structural Examination of Selectivity and Gating

PubMed Central

Kim, Dorothy M.; Nimigean, Crina M.

2016-01-01

Voltage-gated potassium channels play a fundamental role in the generation and propagation of the action potential. The discovery of these channels began with predictions made by early pioneers, and has culminated in their extensive functional and structural characterization by electrophysiological, spectroscopic, and crystallographic studies. With the aid of a variety of crystal structures of these channels, a highly detailed picture emerges of how the voltage-sensing domain reports changes in the membrane electric field and couples this to conformational changes in the activation gate. In addition, high-resolution structural and functional studies of K+ channel pores, such as KcsA and MthK, offer a comprehensive picture on how selectivity is achieved in K+ channels. Here, we illustrate the remarkable features of voltage-gated potassium channels and explain the mechanisms used by these machines with experimental data. PMID:27141052

Experimental investigation of a four-qubit linear-optical quantum logic circuit.

PubMed

Stárek, R; Mičuda, M; Miková, M; Straka, I; Dušek, M; Ježek, M; Fiurášek, J

2016-09-20

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C(3)Z gate and several two-qubit and single-qubit gates. The C(3)Z gate introduces a sign flip if and only if all four qubits are in the computational state |1〉. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses.

Two stage dual gate MESFET monolithic gain control amplifier for Ka-band

NASA Technical Reports Server (NTRS)

Sokolov, V.; Geddes, J.; Contolatis, A.

1987-01-01

A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.

Photo-Nernst current in graphene

NASA Astrophysics Data System (ADS)

Cao, Helin; Aivazian, Grant; Fei, Zaiyao; Ross, Jason; Cobden, David H.; Xu, Xiaodong

2016-03-01

Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter class: the photo-Nernst effect. In graphene devices in a perpendicular magnetic field we observe photocurrent generated uniformly along the free edges, with opposite sign at opposite edges. The signal is antisymmetric in field, shows a peak versus gate voltage at the neutrality point flanked by wings of opposite sign at low fields, and exhibits quantum oscillations at higher fields. These features are all explained by the Nernst effect associated with laser-induced electron heating. This `photo-Nernst’ current provides a simple and clear demonstration of the Shockley-Ramo nature of long-range photocurrent generation in a gapless material.

Logic reversibility and thermodynamic irreversibility demonstrated by DNAzyme-based Toffoli and Fredkin logic gates

PubMed Central

Orbach, Ron; Remacle, Françoise; Levine, R. D.; Willner, Itamar

2012-01-01

The Toffoli and Fredkin gates were suggested as a means to exhibit logic reversibility and thereby reduce energy dissipation associated with logic operations in dense computing circuits. We present a construction of the logically reversible Toffoli and Fredkin gates by implementing a library of predesigned Mg2+-dependent DNAzymes and their respective substrates. Although the logical reversibility, for which each set of inputs uniquely correlates to a set of outputs, is demonstrated, the systems manifest thermodynamic irreversibility originating from two quite distinct and nonrelated phenomena. (i) The physical readout of the gates is by fluorescence that depletes the population of the final state of the machine. This irreversible, heat-releasing process is needed for the generation of the output. (ii) The DNAzyme-powered logic gates are made to operate at a finite rate by invoking downhill energy-releasing processes. Even though the three bits of Toffoli’s and Fredkin’s logically reversible gates manifest thermodynamic irreversibility, we suggest that these gates could have important practical implication in future nanomedicine. PMID:23236131

Range estimation techniques in single-station thunderstorm warning sensors based upon gated, wideband, magnetic direction finder technology

NASA Technical Reports Server (NTRS)

Pifer, Alburt E.; Hiscox, William L.; Cummins, Kenneth L.; Neumann, William T.

1991-01-01

Gated, wideband, magnetic direction finders (DFs) were originally designed to measure the bearing of cloud-to-ground lightning relative to the sensor. A recent addition to this device uses proprietary waveform discrimination logic to select return stroke signatures and certain range dependent features in the waveform to provide an estimate of range of flashes within 50 kms. The enhanced ranging techniques are discussed which were designed and developed for use in single station thunderstorm warning sensor. Included are the results of on-going evaluations being conducted under a variety of meteorological and geographic conditions.

Si1-yGey or Ge1-zSnz Source/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

NASA Astrophysics Data System (ADS)

Eneman, Geert; De Keersgieter, An; Witters, Liesbeth; Mitard, Jerome; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron

2013-04-01

The interaction between two stress techniques, strain-relaxed buffers (SRBs) and epitaxial source/drain stressors, is studied on short, Si1-xGex- and Ge-channel planar transistors. This work focuses on the longitudinal channel stress generated by these two techniques. Unlike for unstrained silicon-channel transistors, for strained channels on top of a strain-relaxed buffer a source/drain stressor without recess generates similar longitudinal channel stress than source/drain stressors with a deep recess. The least efficient stress transfer is obtained for source/drain stressors with a small recess that removes only the strained channel, not the substrate underneath. These trends are explained by a trade-off between elastic relaxation of the strained-channel during source/drain recess and the increased stress generation of thicker source/drain stressors. For Ge-channel pFETs, GeSn source/drains and Si1-xGex strain-relaxed buffers are efficient stressors for mobility enhancement. The former is more efficient for gate-last schemes than for gate-first, while the stress generated by the SRB is found to be independent of the gate-scheme.

New generation attosecond light sources

NASA Astrophysics Data System (ADS)

Chang, Zenghu

2017-04-01

Millijoule level, few-cycle, carrier-envelope phase (CEP) stable Ti:Sapphire lasers centered at 800 nm have been the workhorse for the first generation attosecond light sources in the last 16 years. The spectral range of isolated attosecond pulses with sufficient photon flux for time-resolved pump-probe experiments has been limited to extreme ultraviolet (10 to 150 eV). The shortest pulses achieved are 67 as. It was demonstrated in 2001 that the cutoff photon energy of the high harmonic spectrum could be extended by increasing the center wavelength of the driving lasers. In recent years, mJ level, two-cycle, carrier-envelope phase stabilized lasers at 1.6 to 2.1 micron have been developed by implementing Optical Parametric Chirped Pulse Amplification (OPCPA) techniques. Recently, when long wavelength driving was combined with polarization gating, isolated soft x-rays in the water window (280-530 eV) were generated in our laboratory. The number of x-ray photons in the 120-400 eV range is comparable to that generated with Ti:Sapphire lasers in the 50 to 150 eV range. The ultrabroadband isolated x-ray pulses with 53 as duration were characterized by attosecond streaking measurements. The new generation attosecond soft X-ray sources open the door for studying electron dynamics with element specificity through core to valence transitions. NSF (1068604), ARO (W911NF-14-1-0383), AFOSR (FA9550-15-1-0037, FA9550-16-1-0013), DARPA-PULSE (W31P4Q1310017).

Joint Biological Standoff Detection System increment II: Field Demonstration - SINBAHD Performances

DTIC Science & Technology

2007-12-01

of a dispersive element and a range-gated ICCD that limits the spectral information within the selected volume. This technique has showed an...bioaerosols. This LIF signal is spectrally collected by the combination of a dispersive element and a range-gated ICCD that records spectral...2001 in order to underline the robustness of the spectral signature of a particular biomaterial but of different origin, preparation and dispersion

Plastic fiber scintillator response to fast neutrons

NASA Astrophysics Data System (ADS)

Danly, C. R.; Sjue, S.; Wilde, C. H.; Merrill, F. E.; Haight, R. C.

2014-11-01

The Neutron Imaging System at NIF uses an array of plastic scintillator fibers in conjunction with a time-gated imaging system to form an image of the neutron emission from the imploded capsule. By gating on neutrons that have scattered from the 14.1 MeV DT energy to lower energy ranges, an image of the dense, cold fuel around the hotspot is also obtained. An unmoderated spallation neutron beamline at the Weapons Neutron Research facility at Los Alamos was used in conjunction with a time-gated imaging system to measure the yield of a scintillating fiber array over several energy bands ranging from 1 to 15 MeV. The results and comparison to simulation are presented.

Plastic fiber scintillator response to fast neutrons.

PubMed

Danly, C R; Sjue, S; Wilde, C H; Merrill, F E; Haight, R C

2014-11-01

The Neutron Imaging System at NIF uses an array of plastic scintillator fibers in conjunction with a time-gated imaging system to form an image of the neutron emission from the imploded capsule. By gating on neutrons that have scattered from the 14.1 MeV DT energy to lower energy ranges, an image of the dense, cold fuel around the hotspot is also obtained. An unmoderated spallation neutron beamline at the Weapons Neutron Research facility at Los Alamos was used in conjunction with a time-gated imaging system to measure the yield of a scintillating fiber array over several energy bands ranging from 1 to 15 MeV. The results and comparison to simulation are presented.

SU-E-T-651: Quantification of Dosimetric Accuracy of Respiratory Gated Stereotactic Body Radiation Therapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thiyagarajan, Rajesh; Vikraman, S; Maragathaveni, S

2015-06-15

Purpose: To quantify the dosimetric accuracy of respiratory gated stereotactic body radiation therapy delivery using dynamic thorax phantom. Methods: Three patients with mobile target (2 lung, 1liver) were chosen. Retrospective 4DCT image sets were acquired for using Varian RPM system. An in-house MATLAB program was designed for MIP, MinIP and AvgIP generation. ITV was contoured on MIP image set for lung patients and on MinIP for liver patient. Dynamic IMRT plans were generated on selected phase bin image set in Eclipse (v10.0) planning system. CIRS dynamic thorax phantom was used to perform the dosimetric quality assurance. Patient breathing pattern filemore » from RPM system was converted to phantom compatible file by an in-house MATLAB program. This respiratory pattern fed to the CIRS dynamic thorax phantom. 4DCT image set was acquired for this phantom using patient breathing pattern. Verification plans were generated using patient gating window and delivered on the phantom. Measurements were carried out using with ion chamber and EBT2 film. Exposed films were analyzed and evaluated in FilmQA software. Results: The stability of gated output in comparison with un-gated output was within 0.5%. The Ion chamber measured and TPS calculated dose compared for all the patients. The difference observed was 0.45%, −0.52% and −0.54 for Patient 1, Patient2 and Patient 3 respectively.Gamma value evaluated from EBT film shows pass rates from 92.41% to 99.93% for 3% dose difference and 3mm distance to agreement criteria. Conclusion: Dosimetric accuracy of respiratory gated SBRT delivery for lung and liver was dosimetrically acceptable. The Ion chamber measured dose was within 0.203±0.5659% of the expected dose. Gamma pass rates were within 96.63±3.84% of the expected dose.« less

Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

NASA Astrophysics Data System (ADS)

Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

2017-10-01

Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

Impact of Audio-Coaching on the Position of Lung Tumors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haasbeek, Cornelis J.A.; Spoelstra, Femke; Lagerwaard, Frank J.

2008-07-15

Purpose: Respiration-induced organ motion is a major source of positional, or geometric, uncertainty in thoracic radiotherapy. Interventions to mitigate the impact of motion include audio-coached respiration-gated radiotherapy (RGRT). To assess the impact of coaching on average tumor position during gating, we analyzed four-dimensional computed tomography (4DCT) scans performed both with and without audio-coaching. Methods and Materials: Our RGRT protocol requires that an audio-coached 4DCT scan is performed when the initial free-breathing 4DCT indicates a potential benefit with gating. We retrospectively analyzed 22 such paired scans in patients with well-circumscribed tumors. Changes in lung volume and position of internal target volumesmore » (ITV) generated in three consecutive respiratory phases at both end-inspiration and end-expiration were analyzed. Results: Audio-coaching increased end-inspiration lung volumes by a mean of 10.2% (range, -13% to +43%) when compared with free breathing (p = 0.001). The mean three-dimensional displacement of the center of ITV was 3.6 mm (SD, 2.5; range, 0.3-9.6mm), mainly caused by displacement in the craniocaudal direction. Displacement of ITV caused by coaching was more than 5 mm in 5 patients, all of whom were in the subgroup of 9 patients showing total tumor motion of 10 mm or more during both coached and uncoached breathing. Comparable ITV displacements were observed at end-expiration phases of the 4DCT. Conclusions: Differences in ITV position exceeding 5 mm between coached and uncoached 4DCT scans were detected in up to 56% of mobile tumors. Both end-inspiration and end-expiration RGRT were susceptible to displacements. This indicates that the method of audio-coaching should remain unchanged throughout the course of treatment.« less

Implementing universal nonadiabatic holonomic quantum gates with transmons

NASA Astrophysics Data System (ADS)

Hong, Zhuo-Ping; Liu, Bao-Jie; Cai, Jia-Qi; Zhang, Xin-Ding; Hu, Yong; Wang, Z. D.; Xue, Zheng-Yuan

2018-02-01

Geometric phases are well known to be noise resilient in quantum evolutions and operations. Holonomic quantum gates provide us with a robust way towards universal quantum computation, as these quantum gates are actually induced by non-Abelian geometric phases. Here we propose and elaborate how to efficiently implement universal nonadiabatic holonomic quantum gates on simpler superconducting circuits, with a single transmon serving as a qubit. In our proposal, an arbitrary single-qubit holonomic gate can be realized in a single-loop scenario by varying the amplitudes and phase difference of two microwave fields resonantly coupled to a transmon, while nontrivial two-qubit holonomic gates may be generated with a transmission-line resonator being simultaneously coupled to the two target transmons in an effective resonant way. Moreover, our scenario may readily be scaled up to a two-dimensional lattice configuration, which is able to support large scalable quantum computation, paving the way for practically implementing universal nonadiabatic holonomic quantum computation with superconducting circuits.

Tuning the allosteric regulation of artificial muscarinic and dopaminergic ligand-gated potassium channels by protein engineering of G protein-coupled receptors

PubMed Central

Moreau, Christophe J.; Revilloud, Jean; Caro, Lydia N.; Dupuis, Julien P.; Trouchet, Amandine; Estrada-Mondragón, Argel; Nieścierowicz, Katarzyna; Sapay, Nicolas; Crouzy, Serge; Vivaudou, Michel

2017-01-01

Ligand-gated ion channels enable intercellular transmission of action potential through synapses by transducing biochemical messengers into electrical signal. We designed artificial ligand-gated ion channels by coupling G protein-coupled receptors to the Kir6.2 potassium channel. These artificial channels called ion channel-coupled receptors offer complementary properties to natural channels by extending the repertoire of ligands to those recognized by the fused receptors, by generating more sustained signals and by conferring potassium selectivity. The first artificial channels based on the muscarinic M2 and the dopaminergic D2L receptors were opened and closed by acetylcholine and dopamine, respectively. We find here that this opposite regulation of the gating is linked to the length of the receptor C-termini, and that C-terminus engineering can precisely control the extent and direction of ligand gating. These findings establish the design rules to produce customized ligand-gated channels for synthetic biology applications. PMID:28145461

High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

PubMed

Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

2017-11-03

Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

Power efficient, clock gated multiplexer based full adder cell using 28 nm technology

NASA Astrophysics Data System (ADS)

Gupta, Ashutosh; Murgai, Shruti; Gulati, Anmol; Kumar, Pradeep

2016-03-01

Clock gating is a leading technique used for power saving. Full adders is one of the basic circuit that can be found in maximum VLSI circuits. In this paper clock gated multiplexer based full adder cell is implemented on 28 nm technology. We have designed a full adder cell using a multiplexer with a gated clock without degrading its performance of the cell. We have negative latch circuit for generating gated clock. This gated clock is used to control the multiplexer based full adder cell. The circuit has been synthesized on kintex FPGA through Xilinx ISE Design Suite 14.7 using 28 nm technology in Verilog HDL. The circuit has been simulated on Modelsim 10.3c. The design is verified using System Verilog on QuestaSim in UVM environment. The total power of the circuit has been reduced by 7.41% without degrading the performance of original circuit. The power has been calculated using XPower Analyzer tool of XILINX ISE DESIGN SUITE 14.3.

Engineering modular and orthogonal genetic logic gates for robust digital-like synthetic biology.

PubMed

Wang, Baojun; Kitney, Richard I; Joly, Nicolas; Buck, Martin

2011-10-18

Modular and orthogonal genetic logic gates are essential for building robust biologically based digital devices to customize cell signalling in synthetic biology. Here we constructed an orthogonal AND gate in Escherichia coli using a novel hetero-regulation module from Pseudomonas syringae. The device comprises two co-activating genes hrpR and hrpS controlled by separate promoter inputs, and a σ(54)-dependent hrpL promoter driving the output. The hrpL promoter is activated only when both genes are expressed, generating digital-like AND integration behaviour. The AND gate is demonstrated to be modular by applying new regulated promoters to the inputs, and connecting the output to a NOT gate module to produce a combinatorial NAND gate. The circuits were assembled using a parts-based engineering approach of quantitative characterization, modelling, followed by construction and testing. The results show that new genetic logic devices can be engineered predictably from novel native orthogonal biological control elements using quantitatively in-context characterized parts. © 2011 Macmillan Publishers Limited. All rights reserved.

Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

NASA Astrophysics Data System (ADS)

Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

2018-04-01

In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

Generation of valley-polarized electron beam in bilayer graphene

NASA Astrophysics Data System (ADS)

Park, Changsoo

2015-12-01

We propose a method to produce valley-polarized electron beams using a bilayer graphene npn junction. By analyzing the transmission properties of electrons through the junction with zigzag interface in the presence of trigonal warping, we observe that there exist a range of incident energies and barrier heights in which transmitted electrons are well polarized and collimated. From this observation and by performing numerical simulations, it is demonstrated that valley-dependent electronic currents with nearly perfect polarization can be generated. We also show that the peak-to-peak separation angle between the polarized currents is tunable either by incident energy or by barrier height each of which is controlled by using top and back gate voltages. The results can be used for constructing an electron beam splitter to produce valley-polarized currents.

A photon-photon quantum gate based on a single atom in an optical resonator.

PubMed

Hacker, Bastian; Welte, Stephan; Rempe, Gerhard; Ritter, Stephan

2016-08-11

That two photons pass each other undisturbed in free space is ideal for the faithful transmission of information, but prohibits an interaction between the photons. Such an interaction is, however, required for a plethora of applications in optical quantum information processing. The long-standing challenge here is to realize a deterministic photon-photon gate, that is, a mutually controlled logic operation on the quantum states of the photons. This requires an interaction so strong that each of the two photons can shift the other's phase by π radians. For polarization qubits, this amounts to the conditional flipping of one photon's polarization to an orthogonal state. So far, only probabilistic gates based on linear optics and photon detectors have been realized, because "no known or foreseen material has an optical nonlinearity strong enough to implement this conditional phase shift''. Meanwhile, tremendous progress in the development of quantum-nonlinear systems has opened up new possibilities for single-photon experiments. Platforms range from Rydberg blockade in atomic ensembles to single-atom cavity quantum electrodynamics. Applications such as single-photon switches and transistors, two-photon gateways, nondestructive photon detectors, photon routers and nonlinear phase shifters have been demonstrated, but none of them with the ideal information carriers: optical qubits in discriminable modes. Here we use the strong light-matter coupling provided by a single atom in a high-finesse optical resonator to realize the Duan-Kimble protocol of a universal controlled phase flip (π phase shift) photon-photon quantum gate. We achieve an average gate fidelity of (76.2 ± 3.6) per cent and specifically demonstrate the capability of conditional polarization flipping as well as entanglement generation between independent input photons. This photon-photon quantum gate is a universal quantum logic element, and therefore could perform most existing two-photon operations. The demonstrated feasibility of deterministic protocols for the optical processing of quantum information could lead to new applications in which photons are essential, especially long-distance quantum communication and scalable quantum computing.

3D range-gated super-resolution imaging based on stereo matching for moving platforms and targets

NASA Astrophysics Data System (ADS)

Sun, Liang; Wang, Xinwei; Zhou, Yan

2017-11-01

3D range-gated superresolution imaging is a novel 3D reconstruction technique for target detection and recognition with good real-time performance. However, for moving targets or platforms such as airborne, shipborne, remote operated vehicle and autonomous vehicle, 3D reconstruction has a large error or failure. In order to overcome this drawback, we propose a method of stereo matching for 3D range-gated superresolution reconstruction algorithm. In experiment, the target is a doll of Mario with a height of 38cm at the location of 34m, and we obtain two successive frame images of the Mario. To confirm our method is effective, we transform the original images with translation, rotation, scale and perspective, respectively. The experimental result shows that our method has a good result of 3D reconstruction for moving targets or platforms.

Synthesizing Biomolecule-based Boolean Logic Gates

PubMed Central

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2012-01-01

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications. PMID:23526588

Demonstration of universal parametric entangling gates on a multi-qubit lattice

PubMed Central

Reagor, Matthew; Osborn, Christopher B.; Tezak, Nikolas; Staley, Alexa; Prawiroatmodjo, Guenevere; Scheer, Michael; Alidoust, Nasser; Sete, Eyob A.; Didier, Nicolas; da Silva, Marcus P.; Acala, Ezer; Angeles, Joel; Bestwick, Andrew; Block, Maxwell; Bloom, Benjamin; Bradley, Adam; Bui, Catvu; Caldwell, Shane; Capelluto, Lauren; Chilcott, Rick; Cordova, Jeff; Crossman, Genya; Curtis, Michael; Deshpande, Saniya; El Bouayadi, Tristan; Girshovich, Daniel; Hong, Sabrina; Hudson, Alex; Karalekas, Peter; Kuang, Kat; Lenihan, Michael; Manenti, Riccardo; Manning, Thomas; Marshall, Jayss; Mohan, Yuvraj; O’Brien, William; Otterbach, Johannes; Papageorge, Alexander; Paquette, Jean-Philip; Pelstring, Michael; Polloreno, Anthony; Rawat, Vijay; Ryan, Colm A.; Renzas, Russ; Rubin, Nick; Russel, Damon; Rust, Michael; Scarabelli, Diego; Selvanayagam, Michael; Sinclair, Rodney; Smith, Robert; Suska, Mark; To, Ting-Wai; Vahidpour, Mehrnoosh; Vodrahalli, Nagesh; Whyland, Tyler; Yadav, Kamal; Zeng, William; Rigetti, Chad T.

2018-01-01

We show that parametric coupling techniques can be used to generate selective entangling interactions for multi-qubit processors. By inducing coherent population exchange between adjacent qubits under frequency modulation, we implement a universal gate set for a linear array of four superconducting qubits. An average process fidelity of ℱ = 93% is estimated for three two-qubit gates via quantum process tomography. We establish the suitability of these techniques for computation by preparing a four-qubit maximally entangled state and comparing the estimated state fidelity with the expected performance of the individual entangling gates. In addition, we prepare an eight-qubit register in all possible bitstring permutations and monitor the fidelity of a two-qubit gate across one pair of these qubits. Across all these permutations, an average fidelity of ℱ = 91.6 ± 2.6% is observed. These results thus offer a path to a scalable architecture with high selectivity and low cross-talk. PMID:29423443

Spin measurement in an undoped Si/SiGe double quantum dot incorporating a micromagnet

NASA Astrophysics Data System (ADS)

Wu, Xian; Ward, Daniel; Prance, Jonathan; Kim, Dohun; Shi, Zhan; Mohr, Robert; Gamble, John; Savage, Donald; Lagally, Max; Friesen, Mark; Coppersmith, Susan; Eriksson, Mark

2014-03-01

We present measurements on a double dot formed in an accumulation-mode undoped Si/SiGe heterostructure. The double dot incorporates a proximal micromagnet to generate a stable magnetic field difference between the quantum dots. The gate design incorporates two layers of gates, and the upper layer of gates is split into five different sections to decrease crosstalk between different gates. A novel pattern of the lower layer gates enhances the tunability of tunnel rates. We will describe our attempts to create a singlet-triplet qubit in this device. This work was supported in part by ARO(W911NF-12-0607), NSF(DMR-1206915), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. Now works at Lancaster University, UK.

Turning Oscillations Into Opportunities: Lessons from a Bacterial Decision Gate

NASA Astrophysics Data System (ADS)

Schultz, Daniel; Lu, Mingyang; Stavropoulos, Trevor; Onuchic, Jose'; Ben-Jacob, Eshel

2013-04-01

Sporulation vs. competence provides a prototypic example of collective cell fate determination. The decision is performed by the action of three modules: 1) A stochastic competence switch whose transition probability is regulated by population density, population stress and cell stress. 2) A sporulation timer whose clock rate is regulated by cell stress and population stress. 3) A decision gate that is coupled to the timer via a special repressilator-like loop. We show that the distinct circuit architecture of this gate leads to special dynamics and noise management characteristics: The gate opens a time-window of opportunity for competence transitions during which it generates oscillations that are turned into a chain of transition opportunities - each oscillation opens a short interval with high transition probability. The special architecture of the gate also leads to filtering of external noise and robustness against internal noise and variations in the circuit parameters.

Synthesizing biomolecule-based Boolean logic gates.

PubMed

Miyamoto, Takafumi; Razavi, Shiva; DeRose, Robert; Inoue, Takanari

2013-02-15

One fascinating recent avenue of study in the field of synthetic biology is the creation of biomolecule-based computers. The main components of a computing device consist of an arithmetic logic unit, the control unit, memory, and the input and output devices. Boolean logic gates are at the core of the operational machinery of these parts, and hence to make biocomputers a reality, biomolecular logic gates become a necessity. Indeed, with the advent of more sophisticated biological tools, both nucleic acid- and protein-based logic systems have been generated. These devices function in the context of either test tubes or living cells and yield highly specific outputs given a set of inputs. In this review, we discuss various types of biomolecular logic gates that have been synthesized, with particular emphasis on recent developments that promise increased complexity of logic gate circuitry, improved computational speed, and potential clinical applications.

Combining dynamical decoupling with fault-tolerant quantum computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ng, Hui Khoon; Preskill, John; Lidar, Daniel A.

2011-07-15

We study how dynamical decoupling (DD) pulse sequences can improve the reliability of quantum computers. We prove upper bounds on the accuracy of DD-protected quantum gates and derive sufficient conditions for DD-protected gates to outperform unprotected gates. Under suitable conditions, fault-tolerant quantum circuits constructed from DD-protected gates can tolerate stronger noise and have a lower overhead cost than fault-tolerant circuits constructed from unprotected gates. Our accuracy estimates depend on the dynamics of the bath that couples to the quantum computer and can be expressed either in terms of the operator norm of the bath's Hamiltonian or in terms of themore » power spectrum of bath correlations; we explain in particular how the performance of recursively generated concatenated pulse sequences can be analyzed from either viewpoint. Our results apply to Hamiltonian noise models with limited spatial correlations.« less

Turning Oscillations Into Opportunities: Lessons from a Bacterial Decision Gate

PubMed Central

Schultz, Daniel; Lu, Mingyang; Stavropoulos, Trevor; Onuchic, Jose'; Ben-Jacob, Eshel

2013-01-01

Sporulation vs. competence provides a prototypic example of collective cell fate determination. The decision is performed by the action of three modules: 1) A stochastic competence switch whose transition probability is regulated by population density, population stress and cell stress. 2) A sporulation timer whose clock rate is regulated by cell stress and population stress. 3) A decision gate that is coupled to the timer via a special repressilator-like loop. We show that the distinct circuit architecture of this gate leads to special dynamics and noise management characteristics: The gate opens a time-window of opportunity for competence transitions during which it generates oscillations that are turned into a chain of transition opportunities – each oscillation opens a short interval with high transition probability. The special architecture of the gate also leads to filtering of external noise and robustness against internal noise and variations in the circuit parameters. PMID:23591544

Experimental investigation of a four-qubit linear-optical quantum logic circuit

PubMed Central

Stárek, R.; Mičuda, M.; Miková, M.; Straka, I.; Dušek, M.; Ježek, M.; Fiurášek, J.

2016-01-01

We experimentally demonstrate and characterize a four-qubit linear-optical quantum logic circuit. Our robust and versatile scheme exploits encoding of two qubits into polarization and path degrees of single photons and involves two crossed inherently stable interferometers. This approach allows us to design a complex quantum logic circuit that combines a genuine four-qubit C3Z gate and several two-qubit and single-qubit gates. The C3Z gate introduces a sign flip if and only if all four qubits are in the computational state |1〉. We verify high-fidelity performance of this central four-qubit gate using Hofmann bounds on quantum gate fidelity and Monte Carlo fidelity sampling. We also experimentally demonstrate that the quantum logic circuit can generate genuine multipartite entanglement and we certify the entanglement with the use of suitably tailored entanglement witnesses. PMID:27647176

Trapped-Ion Quantum Logic with Global Radiation Fields.

PubMed

Weidt, S; Randall, J; Webster, S C; Lake, K; Webb, A E; Cohen, I; Navickas, T; Lekitsch, B; Retzker, A; Hensinger, W K

2016-11-25

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

Hysteresis free negative total gate capacitance in junctionless transistors

NASA Astrophysics Data System (ADS)

Gupta, Manish; Kranti, Abhinav

2017-09-01

In this work, we report on the hysteresis free impact ionization induced off-to-on transition while preserving sub-60 mV/decade Subthreshold swing (S-swing) using asymmetric mode operation in double gate silicon (Si) and germanium (Ge) junctionless (JL) transistor. It is shown that sub-60 mV/decade steep switching due to impact ionization implies a negative value of the total gate capacitance. The performance of asymmetric gate JL transistor is compared with symmetric gate operation of JL device, and the condition for hysteresis free current transition with a sub-60 mV/decade switching is analyzed through the product of current density (J) and electric field (E). It is shown that asymmetric gate operation limits the degree of impact ionization inherent in the semiconductor film to levels sufficient for negative total gate capacitance but lower than that required for the occurrence of hysteresis. The work highlights new viewpoints related to the suppression of hysteresis associated with steep switching JL transistors while maintaining S-swing within the range 6-15 mV/decade leading to the negative value of total gate capacitance.

Repeat-until-success cubic phase gate for universal continuous-variable quantum computation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marshall, Kevin; Pooser, Raphael; Siopsis, George

2015-03-24

We report that to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable “repeat-until-success” approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. Ultimately, we find that our scheme offers benefits in terms of the expected time until success, as well as the fact that we do not require any complex off-line resource state,more » although we require a primitive quantum memory.« less

"Plug and play" logic gates based on fluorescence switching regulated by self-assembly of nucleotide and lanthanide ions.

PubMed

Pu, Fang; Ren, Jinsong; Qu, Xiaogang

2014-06-25

Molecular logic gates in response to chemical, biological, or optical input signals at a molecular level have received much interest over the past decade. Herein, we construct "plug and play" logic systems based on the fluorescence switching of guest molecules confined in coordination polymer nanoparticles generated from nucleotide and lanthanide ions. In the system, the addition of new modules directly enables new logic functions. PASS 0, YES, PASS 1, NOT, IMP, OR, and AND gates are successfully constructed in sequence. Moreover, different logic gates (AND, INH, and IMP) can be constructed using different guest molecules and the same input combinations. The work will be beneficial to the future logic design and expand the applications of coordination polymers.

Pulsed dynamical decoupling for fast and robust two-qubit gates on trapped ions

NASA Astrophysics Data System (ADS)

Arrazola, I.; Casanova, J.; Pedernales, J. S.; Wang, Z.-Y.; Solano, E.; Plenio, M. B.

2018-05-01

We propose a pulsed dynamical decoupling protocol as the generator of tunable, fast, and robust quantum phase gates between two microwave-driven trapped-ion hyperfine qubits. The protocol consists of sequences of π pulses acting on ions that are oriented along an externally applied magnetic-field gradient. In contrast to existing approaches, in our design the two vibrational modes of the ion chain cooperate under the influence of the external microwave driving to achieve significantly increased gate speeds. Our scheme is robust against the dominant noise sources, which are errors on the magnetic-field and microwave pulse intensities, as well as motional heating, predicting two-qubit gates with fidelities above 99.9% in tens of microseconds.

A parallel computational model for GATE simulations.

PubMed

Rannou, F R; Vega-Acevedo, N; El Bitar, Z

2013-12-01

GATE/Geant4 Monte Carlo simulations are computationally demanding applications, requiring thousands of processor hours to produce realistic results. The classical strategy of distributing the simulation of individual events does not apply efficiently for Positron Emission Tomography (PET) experiments, because it requires a centralized coincidence processing and large communication overheads. We propose a parallel computational model for GATE that handles event generation and coincidence processing in a simple and efficient way by decentralizing event generation and processing but maintaining a centralized event and time coordinator. The model is implemented with the inclusion of a new set of factory classes that can run the same executable in sequential or parallel mode. A Mann-Whitney test shows that the output produced by this parallel model in terms of number of tallies is equivalent (but not equal) to its sequential counterpart. Computational performance evaluation shows that the software is scalable and well balanced. Copyright © 2013 Elsevier Ireland Ltd. All rights reserved.

Polarization entangled cluster state generation in a lithium niobate chip

NASA Astrophysics Data System (ADS)

Szep, Attila; Kim, Richard; Shin, Eunsung; Fanto, Michael L.; Osman, Joseph; Alsing, Paul M.

2016-10-01

We present a design of a quantum information processing C-phase (Controlled-phase) gate applicable for generating cluster states that has a form of integrated photonic circuits assembled with cascaded directional couplers on a Ti in-diffused Lithium Niobate (Ti-LN) platform where directional couplers as the integrated optical analogue of bulk beam splitters are used as fundamental building blocks. Based on experimentally optimized fabrication parameters of Ti-LN optical waveguides operating at an 810nm wavelength, an integrated Ti-LN quantum C-phase gate is designed and simulated. Our proposed C-phase gate consists of three tunable directional couplers cascaded together with having different weighted switching ratios for providing a tool of routing vertically- and horizontally-polarized photons independently. Its operation mechanism relies on selectively controlling the optical coupling of orthogonally polarized modes via the change in the index of refraction, and its operation is confirmed by the BPM simulation.

Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

PubMed

Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

2018-01-03

Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

DOE PAGES

Shirkhorshidian, A.; Bishop, N. C.; Dominguez, J.; ...

2015-04-30

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source–drain voltage and non-linear dependence on gate bias. Effects such as Fowler–Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entiremore » range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15–20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.« less

Braiding by Majorana tracking and long-range CNOT gates with color codes

NASA Astrophysics Data System (ADS)

Litinski, Daniel; von Oppen, Felix

2017-11-01

Color-code quantum computation seamlessly combines Majorana-based hardware with topological error correction. Specifically, as Clifford gates are transversal in two-dimensional color codes, they enable the use of the Majoranas' non-Abelian statistics for gate operations at the code level. Here, we discuss the implementation of color codes in arrays of Majorana nanowires that avoid branched networks such as T junctions, thereby simplifying their realization. We show that, in such implementations, non-Abelian statistics can be exploited without ever performing physical braiding operations. Physical braiding operations are replaced by Majorana tracking, an entirely software-based protocol which appropriately updates the Majoranas involved in the color-code stabilizer measurements. This approach minimizes the required hardware operations for single-qubit Clifford gates. For Clifford completeness, we combine color codes with surface codes, and use color-to-surface-code lattice surgery for long-range multitarget CNOT gates which have a time overhead that grows only logarithmically with the physical distance separating control and target qubits. With the addition of magic state distillation, our architecture describes a fault-tolerant universal quantum computer in systems such as networks of tetrons, hexons, or Majorana box qubits, but can also be applied to nontopological qubit platforms.

A Gaussian framework for modeling effects of frequency-dependent attenuation, frequency-dependent scattering, and gating.

PubMed

Wear, Keith A

2002-11-01

For a wide range of applications in medical ultrasound, power spectra of received signals are approximately Gaussian. It has been established previously that an ultrasound beam with a Gaussian spectrum propagating through a medium with linear attenuation remains Gaussian. In this paper, Gaussian transformations are derived to model the effects of scattering (according to a power law, as is commonly applicable in soft tissues, especially over limited frequency ranges) and gating (with a Hamming window, a commonly used gate function). These approximations are shown to be quite accurate even for relatively broad band systems with fractional bandwidths approaching 100%. The theory is validated by experiments in phantoms consisting of glass particles suspended in agar.

Binary fingerprints at fluctuation-enhanced sensing.

PubMed

Chang, Hung-Chih; Kish, Laszlo B; King, Maria D; Kwan, Chiman

2010-01-01

We have developed a simple way to generate binary patterns based on spectral slopes in different frequency ranges at fluctuation-enhanced sensing. Such patterns can be considered as binary "fingerprints" of odors. The method has experimentally been demonstrated with a commercial semiconducting metal oxide (Taguchi) sensor exposed to bacterial odors (Escherichia coli and Anthrax-surrogate Bacillus subtilis) and processing their stochastic signals. With a single Taguchi sensor, the situations of empty chamber, tryptic soy agar (TSA) medium, or TSA with bacteria could be distinguished with 100% reproducibility. The bacterium numbers were in the range of 2.5 × 10(4)-10(6). To illustrate the relevance for ultra-low power consumption, we show that this new type of signal processing and pattern recognition task can be implemented by a simple analog circuitry and a few logic gates with total power consumption in the microWatts range.

Light-driven OR and XOR programmable chemical logic gates.

PubMed

Szaciłowski, Konrad; Macyk, Wojciech; Stochel, Grazyna

2006-04-12

Photoelectrodes made of nanocrystalline titanium dioxide modified with various pentacyanoferrates exhibit unique photoelectrochemical properties; photocurrent direction can be switched from anodic to cathodic and vice versa upon changes in photoelectrode potential and incident light wavelength (PhotoElectrochemical Photocurrent Switching, PEPS effect). At certain potentials, anodic photocurrent generated upon UV irradiation has the same intensity as the cathodic photocurrent generated upon visible irradiation. Under these conditions, simultaneous irradiation with UV and visible light results in compensation of anodic and cathodic photocurrents, and zero net photocurrent is observed. This process can be used for construction of unique light-driven chemical logic gates.

Note: The design of thin gap chamber simulation signal source based on field programmable gate array.

PubMed

Hu, Kun; Lu, Houbing; Wang, Xu; Li, Feng; Liang, Futian; Jin, Ge

2015-01-01

The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

Note: The design of thin gap chamber simulation signal source based on field programmable gate array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Kun; Wang, Xu; Li, Feng

The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.

Methods for the design and analysis of power optimized finite-state machines using clock gating

NASA Astrophysics Data System (ADS)

Chodorowski, Piotr

2017-11-01

The paper discusses two methods of design of power optimized FSMs. Both methods use clock gating techniques. The main objective of the research was to write a program capable of generating automatic hardware description of finite-state machines in VHDL and testbenches to help power analysis. The creation of relevant output files is detailed step by step. The program was tested using the LGSynth91 FSM benchmark package. An analysis of the generated circuits shows that the second method presented in this paper leads to significant reduction of power consumption.

Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

PubMed

Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

2017-03-06

Large conductance Ca 2+ -activated K + channels (BK channels) gate open in response to both membrane voltage and intracellular Ca 2+ The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca 2+ sensor. How these voltage and Ca 2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca 2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca 2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits. © 2017 Zhang et al.

Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels

PubMed Central

Zhang, Guohui; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L.; Salkoff, Lawrence

2017-01-01

Large conductance Ca2+-activated K+ channels (BK channels) gate open in response to both membrane voltage and intracellular Ca2+. The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca2+ sensor. How these voltage and Ca2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA. http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel’s β1 and β2 subunits. PMID:28196879

Design and Development of High-Repetition-Rate Satellite Laser Ranging System

NASA Astrophysics Data System (ADS)

Choi, Eun-Jung; Bang, Seong-Cheol; Sung, Ki-Pyoung; Lim, Hyung-Chul; Jung, Chan-Gyu; Kim, In-Yeung; Choi, Jae-Seung

2015-09-01

The Accurate Ranging System for Geodetic Observation ? Mobile (ARGO-M) was successfully developed as the first Korean mobile Satellite Laser Ranging (SLR) system in 2012, and has joined in the International Laser Ranging Service (ILRS) tracking network, DAEdeoK (DAEK) station. The DAEK SLR station was approved as a validated station in April 2014, through the ILRS station ¡°data validation¡± process. The ARGO-M system is designed to enable 2 kHz laser ranging with millimeter-level precision for geodetic, remote sensing, navigation, and experimental satellites equipped with Laser Retroreflector Arrays (LRAs). In this paper, we present the design and development of a next generation high-repetition-rate SLR system for ARGO-M. The laser ranging rate up to 10 kHz is becoming an important issue in the SLR community to improve ranging precision. To implement high-repetition-rate SLR system, the High-repetition-rate SLR operation system (HSLR-10) was designed and developed using ARGO-M Range Gate Generator (A-RGG), so as to enable laser ranging from 50 Hz to 10 kHz. HSLR-10 includes both hardware controlling software and data post-processing software. This paper shows the design and development of key technologies of high-repetition-rate SLR system. The developed system was tested successfully at DAEK station and then moved to Sejong station, a new Korean SLR station, on July 1, 2015. HSLR-10 will begin normal operations at Sejong station in the near future.

Optimization of GATE and PHITS Monte Carlo code parameters for spot scanning proton beam based on simulation with FLUKA general-purpose code

NASA Astrophysics Data System (ADS)

Kurosu, Keita; Das, Indra J.; Moskvin, Vadim P.

2016-01-01

Spot scanning, owing to its superior dose-shaping capability, provides unsurpassed dose conformity, in particular for complex targets. However, the robustness of the delivered dose distribution and prescription has to be verified. Monte Carlo (MC) simulation has the potential to generate significant advantages for high-precise particle therapy, especially for medium containing inhomogeneities. However, the inherent choice of computational parameters in MC simulation codes of GATE, PHITS and FLUKA that is observed for uniform scanning proton beam needs to be evaluated. This means that the relationship between the effect of input parameters and the calculation results should be carefully scrutinized. The objective of this study was, therefore, to determine the optimal parameters for the spot scanning proton beam for both GATE and PHITS codes by using data from FLUKA simulation as a reference. The proton beam scanning system of the Indiana University Health Proton Therapy Center was modeled in FLUKA, and the geometry was subsequently and identically transferred to GATE and PHITS. Although the beam transport is managed by spot scanning system, the spot location is always set at the center of a water phantom of 600 × 600 × 300 mm3, which is placed after the treatment nozzle. The percentage depth dose (PDD) is computed along the central axis using 0.5 × 0.5 × 0.5 mm3 voxels in the water phantom. The PDDs and the proton ranges obtained with several computational parameters are then compared to those of FLUKA, and optimal parameters are determined from the accuracy of the proton range, suppressed dose deviation, and computational time minimization. Our results indicate that the optimized parameters are different from those for uniform scanning, suggesting that the gold standard for setting computational parameters for any proton therapy application cannot be determined consistently since the impact of setting parameters depends on the proton irradiation technique. We therefore conclude that customization parameters must be set with reference to the optimized parameters of the corresponding irradiation technique in order to render them useful for achieving artifact-free MC simulation for use in computational experiments and clinical treatments.

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2011-07-31

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills inmore » advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.« less

Time gating for energy selection and scatter rejection: High-energy pulsed neutron imaging at LANSCE

NASA Astrophysics Data System (ADS)

Swift, Alicia; Schirato, Richard; McKigney, Edward; Hunter, James; Temple, Brian

2015-09-01

The Los Alamos Neutron Science Center (LANSCE) is a linear accelerator in Los Alamos, New Mexico that accelerates a proton beam to 800 MeV, which then produces spallation neutron beams. Flight path FP15R uses a tungsten target to generate neutrons of energy ranging from several hundred keV to ~600 MeV. The beam structure has micropulses of sub-ns width and period of 1.784 ns, and macropulses of 625 μs width and frequency of either 50 Hz or 100 Hz. This corresponds to 347 micropulses per macropulse, or 1.74 x 104 micropulses per second when operating at 50 Hz. Using a very fast, cooled ICCD camera (Princeton Instruments PI-Max 4), gated images of various objects were obtained on FP15R in January 2015. Objects imaged included blocks of lead and borated polyethylene; a tungsten sphere; and a tungsten, polyethylene, and steel cylinder. Images were obtained in 36 min or less, with some in as little as 6 min. This is novel because the gate widths (some as narrow as 10 ns) were selected to reject scatter and other signal not of interest (e.g. the gamma flash that precedes the neutron pulse), which has not been demonstrated at energies above 14 MeV. This proof-of-principle experiment shows that time gating is possible above 14MeV and is useful for selecting neutron energy and reducing scatter, thus forming clearer images. Future work (simulation and experimental) is being undertaken to improve camera shielding and system design and to precisely determine optical properties of the imaging system.

Chirp of the single attosecond pulse generated by a polarization gating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang Zenghu

2005-02-01

The chirp of the xuv supercontinuum generated by a polarization gating is investigated by comparing three-dimensional nonadiabatic numerical simulations with classical calculations. The origin of the chirp is the dependence of the energy gain by an electron on the return time. The chirp is positive and its value is almost the same as that when a linearly polarized laser is used. Although the 250-eV-wide supercontinuum corresponds to a single attosecond pulse, the shortest duration of the pulse is limited by the chirp. By compensating the positive chirp with the negative group velocity dispersion of a Sn filter, it is predictedmore » that a single 58-as pulse can be generated.« less

A Field Programmable Gate Array-Based Reconfigurable Smart-Sensor Network for Wireless Monitoring of New Generation Computer Numerically Controlled Machines

PubMed Central

Moreno-Tapia, Sandra Veronica; Vera-Salas, Luis Alberto; Osornio-Rios, Roque Alfredo; Dominguez-Gonzalez, Aurelio; Stiharu, Ion; de Jesus Romero-Troncoso, Rene

2010-01-01

Computer numerically controlled (CNC) machines have evolved to adapt to increasing technological and industrial requirements. To cover these needs, new generation machines have to perform monitoring strategies by incorporating multiple sensors. Since in most of applications the online Processing of the variables is essential, the use of smart sensors is necessary. The contribution of this work is the development of a wireless network platform of reconfigurable smart sensors for CNC machine applications complying with the measurement requirements of new generation CNC machines. Four different smart sensors are put under test in the network and their corresponding signal processing techniques are implemented in a Field Programmable Gate Array (FPGA)-based sensor node. PMID:22163602

A field programmable gate array-based reconfigurable smart-sensor network for wireless monitoring of new generation computer numerically controlled machines.

PubMed

Moreno-Tapia, Sandra Veronica; Vera-Salas, Luis Alberto; Osornio-Rios, Roque Alfredo; Dominguez-Gonzalez, Aurelio; Stiharu, Ion; Romero-Troncoso, Rene de Jesus

2010-01-01

Computer numerically controlled (CNC) machines have evolved to adapt to increasing technological and industrial requirements. To cover these needs, new generation machines have to perform monitoring strategies by incorporating multiple sensors. Since in most of applications the online Processing of the variables is essential, the use of smart sensors is necessary. The contribution of this work is the development of a wireless network platform of reconfigurable smart sensors for CNC machine applications complying with the measurement requirements of new generation CNC machines. Four different smart sensors are put under test in the network and their corresponding signal processing techniques are implemented in a Field Programmable Gate Array (FPGA)-based sensor node.

Resource-efficient generation of linear cluster states by linear optics with postselection

DOE PAGES

Uskov, D. B.; Alsing, P. M.; Fanto, M. L.; ...

2015-01-30

Here we report on theoretical research in photonic cluster-state computing. Finding optimal schemes of generating non-classical photonic states is of critical importance for this field as physically implementable photon-photon entangling operations are currently limited to measurement-assisted stochastic transformations. A critical parameter for assessing the efficiency of such transformations is the success probability of a desired measurement outcome. At present there are several experimental groups that are capable of generating multi-photon cluster states carrying more than eight qubits. Separate photonic qubits or small clusters can be fused into a single cluster state by a probabilistic optical CZ gate conditioned on simultaneousmore » detection of all photons with 1/9 success probability for each gate. This design mechanically follows the original theoretical scheme of cluster state generation proposed more than a decade ago by Raussendorf, Browne, and Briegel. The optimality of the destructive CZ gate in application to linear optical cluster state generation has not been analyzed previously. Our results reveal that this method is far from the optimal one. Employing numerical optimization we have identified that the maximal success probability of fusing n unentangled dual-rail optical qubits into a linear cluster state is equal to 1/2 n-1; an m-tuple of photonic Bell pair states, commonly generated via spontaneous parametric down-conversion, can be fused into a single cluster with the maximal success probability of 1/4 m-1.« less

Optically gated beating-heart imaging

PubMed Central

Taylor, Jonathan M.

2014-01-01

The constant motion of the beating heart presents an obstacle to clear optical imaging, especially 3D imaging, in small animals where direct optical imaging would otherwise be possible. Gating techniques exploit the periodic motion of the heart to computationally “freeze” this movement and overcome motion artifacts. Optically gated imaging represents a recent development of this, where image analysis is used to synchronize acquisition with the heartbeat in a completely non-invasive manner. This article will explain the concept of optical gating, discuss a range of different implementation strategies and their strengths and weaknesses. Finally we will illustrate the usefulness of the technique by discussing applications where optical gating has facilitated novel biological findings by allowing 3D in vivo imaging of cardiac myocytes in their natural environment of the beating heart. PMID:25566083

Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

NASA Astrophysics Data System (ADS)

Feng, Liqiang; Liu, Katheryn

2018-05-01

An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

Coupling mechanism in the gate and oscillator model of the SCN

NASA Astrophysics Data System (ADS)

Li, Ying; Liu, Zengrong

2016-09-01

In mammals, the suprachiasmatic nucleus (SCN) of the hypothalamus is considered as the master circadian pacemaker. The SCN is divided into two subgroups of gate and oscillator cells: the ventrolateral (VL) neurons, which receive the periodic light-dark (LD) signal, and the dorsomedial (DM) neurons, which are coupled to the VL cells. The fundamental question is how the individual cellular oscillators, expressing a wide range of periods, interact and assemble to create an integrated pacemaker that can govern behavioral and physiological rhythmicity and be reset by environmental light. The key is that the heterogeneous network formed by the cellular clocks within the SCN must synchronize to maintain timekeeping activity. Based on the structural and functional heterogeneity of the SCN, the authors bring forward a mathematical model including gate cells and oscillator cells with a wide range of periods. The gate neurons offer daily injection to oscillator neurons and the activation of gate is determined by the output of the oscillator neurons. In this model, the authors consider two kinds of coupling: interior coupling among the oscillator cells and exterior coupling from the gate cells to the oscillator cells. The authors mainly analyze the combined effects of these two kinds of coupling on the entrainment of the oscillator cells in the DM part. It is found that the interior coupling is conducive to entrainment, but a stronger coupling is not beneficial to entrainment. The gate mechanism in exterior coupling is more propitious to entrainment than continuous coupling. This study helps to understand collective circadian rhythm in the mammals.

Dual amplitude pulse generator for radiation detectors

DOEpatents

Hoggan, Jerry M.; Kynaston, Ronnie L.; Johnson, Larry O.

2001-01-01

A pulsing circuit for producing an output signal having a high amplitude pulse and a low amplitude pulse may comprise a current source for providing a high current signal and a low current signal. A gate circuit connected to the current source includes a trigger signal input that is responsive to a first trigger signal and a second trigger signal. The first trigger signal causes the gate circuit to connect the high current signal to a pulse output terminal whereas the second trigger signal causes the gate circuit to connect the low current signal to the pulse output terminal.

Electron-beam irradiation-induced gate oxide degradation

NASA Astrophysics Data System (ADS)

Cho, Byung Jin; Chong, Pei Fen; Chor, Eng Fong; Joo, Moon Sig; Yeo, In Seok

2000-12-01

Gate oxide degradation induced by electron-beam irradiation has been studied. A large increase in the low-field excess leakage current was observed on irradiated oxides and this was very similar to electrical stress-induced leakage currents. Unlike conventional electrical stress-induced leakage currents, however, electron-beam induced leakage currents exhibit a power law relationship with fluency without any signs of saturation. It has also been found that the electron-beam neither accelerates nor initiates quasibreakdown of the ultrathin gate oxide. Therefore, the traps generated by electron-beam irradiation do not contribute to quasibreakdown, only to the leakage current.

Voltage gating by molecular subunits of Na+ and K+ ion channels: higher-dimensional cubic kinetics, rate constants, and temperature

PubMed Central

2015-01-01

The structural similarity between the primary molecules of voltage-gated Na and K channels (alpha subunits) and activation gating in the Hodgkin-Huxley model is brought into full agreement by increasing the model's sodium kinetics to fourth order (m3 → m4). Both structures then virtually imply activation gating by four independent subprocesses acting in parallel. The kinetics coalesce in four-dimensional (4D) cubic diagrams (16 states, 32 reversible transitions) that show the structure to be highly failure resistant against significant partial loss of gating function. Rate constants, as fitted in phase plot data of retinal ganglion cell excitation, reflect the molecular nature of the gating transitions. Additional dimensions (6D cubic diagrams) accommodate kinetically coupled sodium inactivation and gating processes associated with beta subunits. The gating transitions of coupled sodium inactivation appear to be thermodynamically irreversible; response to dielectric surface charges (capacitive displacement) provides a potential energy source for those transitions and yields highly energy-efficient excitation. A comparison of temperature responses of the squid giant axon (apparently Arrhenius) and mammalian channel gating yields kinetic Q10 = 2.2 for alpha unit gating, whose transitions are rate-limiting at mammalian temperatures; beta unit kinetic Q10 = 14 reproduces the observed non-Arrhenius deviation of mammalian gating at low temperatures; the Q10 of sodium inactivation gating matches the rate-limiting component of activation gating at all temperatures. The model kinetics reproduce the physiologically large frequency range for repetitive firing in ganglion cells and the physiologically observed strong temperature dependence of recovery from inactivation. PMID:25867741

Giant sand waves at the mouth of San Francisco Bay

USGS Publications Warehouse

Barnard, P.L.; Hanes, D.M.; Rubin, D.M.; Kvitek, R.G.

2006-01-01

A field of giant sand waves, among the largest in the world, recently was mapped in high resolution for the first time during a multibeam survey in 2004 and 2005 through the strait of the Golden Gate at the mouth of San Francisco Bay in California (Figure la). This massive bed form field covers an area of approximately four square kilometers in water depths ranging from 30 to 106 meters, featuring more than 40 distinct sand waves with crests aligned approximately perpendicular to the dominant tidally generated cross-shore currents, with wavelengths and heights that measure up to 220 meters and 10 meters, respectively. Sand wave crests can be traced continuously for up to two kilometers across the mouth of this energetic tidal inlet, where depth-averaged tidal currents through the strait below the Golden Gate Bridge exceed 2.5 meters per second during peak ebb flows. Repeated surveys demonstrated that the sand waves are active and dynamic features that move in response to tidally generated currents. The complex temporal and spatial variations in wave and tidal current interactions in this region result in an astoundingly diverse array of bed form morphologies, scales, and orientations. Bed forms of approximately half the scale of those reported in this article previously were mapped inside San Francisco Bay during a multibeam survey in 1997 [Chin et al., 1997].

SU-F-T-634: Feasibility Study of Respiratory Gated RapidArc SBRT Using a 6MV FFF Photon Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dou, K; Safaraz, M; Rodgers, J

Purpose: To conduct a feasibility study on retrospective respiratory gating and marker tracking for lung stereotactic body radiotherapy (SBRT) with a gated RapidArc delivery using a 6MV flattened filter free photon mode. Methods: A CIRS dynamic thorax phantom Model 008A with different inserts was used for treatment planning and respiratory gating. 4D CT had a free breathing simulation followed by a respiration gated, ten phased CT using a Philips Brilliance CT with a Varian RPM respiratory gating system. The internal target volume was created from the ten phase gated CT images, followed by exporting to a Varian Eclipse TPS v11more » for treatment planning on the free breath images. Both MIP and AIP were also generated for comparison of planning and target motion tracking. The planned dose was delivered with a 6MV FFF photon beam from a Varian TrueBeam accelerator. Gated target motion was also verified by tracking the implanted makers during delivery using continuous kV imaging in addition to CBCT, kV and MV localization and verification. Results: Gating was studied in three situations of lower, normal, and faster breathing at a respiratory cycle of 5, 15 and 25 breaths per minute, respectively. 4D treatment planning was performed at a normal breathing of 15 breaths per minute. The gated patterns obtained using the TrueBeam IR camera were compared with the planned ones while gating operation was added prior to delivery . Gating was realized only when the measured respiratory patterns matched to the planned ones. The gated target motion was verified within the tolerance by kV and MV imaging. Either free breathing CT or averaged CT images were studied to be good for image guidance to align the target. Conclusion: Gated RapidArc SBRT delivered with a 6MV FFF photon beam is realized using a dynamic lung phantom.« less

Leakage current conduction, hole injection, and time-dependent dielectric breakdown of n-4H-SiC MOS capacitors during positive bias temperature stress

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2017-01-01

The conduction mechanism(s) of gate leakage current JG through thermally grown silicon dioxide (SiO2) films on the silicon (Si) face of n-type 4H-silicon carbide (4H-SiC) has been studied in detail under positive gate bias. It was observed that at an oxide field above 5 MV/cm, the leakage current measured up to 303 °C can be explained by Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps located at ≈2.5 eV below the SiO2 conduction band. However, the PF emission current IPF dominates the FN electron tunneling current IFN at oxide electric fields Eox between 5 and 10 MV/cm and in the temperature ranging from 31 to 303 °C. In addition, we have presented a comprehensive analysis of injection of holes and their subsequent trapping into as-grown oxide traps eventually leading to time-dependent dielectric breakdown during electron injection under positive bias temperature stress (PBTS) in n-4H-SiC metal-oxide-silicon carbide structures. Holes were generated in the heavily doped n-type polycrystalline silicon (n+-polySi) gate (anode) as well as in the oxide bulk via band-to-band ionization by the hot-electrons depending on their energy and SiO2 film thickness at Eox between 6 and 10 MV/cm (prior to the intrinsic oxide breakdown field). Transport of hot electrons emitted via both FN and PF mechanisms was taken into account. On the premise of the hole-induced oxide breakdown model, the time- and charge-to-breakdown ( tBD and QBD ) of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC were estimated at a wide range of temperatures. tBD follows the Arrhenius law with activation energies varying inversely with initial applied constant field Eox supporting the reciprocal field ( 1 /E ) model of breakdown irrespective of SiO2 film thicknesses. We obtained an excellent margin (6.66 to 6.33 MV/cm at 31 °C and 5.11 to 4.55 MV/cm at 303 °C) of normal operating field for a 10-year projected lifetime of 8.5 to 47 nm-thick SiO2 films on n-4H-SiC under positive bias on the n+-polySi gate. Furthermore, the projected maximum operating oxide field was little higher in metal gate devices compared to n+-polySi gate devices having an identically thick thermal SiO2 films under PBTS.

Robustness of high-fidelity Rydberg gates with single-site addressability

NASA Astrophysics Data System (ADS)

Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

2014-09-01

Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

Integrating Partial Polarization into a Metal-Ferroelectric-Semiconductor Field Effect Transistor Model

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

The ferroelectric channel in a Metal-Ferroelectric-Semiconductor Field Effect Transistor (MFSFET) can partially change its polarization when the gate voltage near the polarization threshold voltage. This causes the MFSFET Drain current to change with repeated pulses of the same gate voltage near the polarization threshold voltage. A previously developed model [11, based on the Fermi-Dirac function, assumed that for a given gate voltage and channel polarization, a sin-le Drain current value would be generated. A study has been done to characterize the effects of partial polarization on the Drain current of a MFSFET. These effects have been described mathematically and these equations have been incorporated into a more comprehensive mathematical model of the MFSFET. The model takes into account the hysteresis nature of the MFSFET and the time dependent decay as well as the effects of partial polarization. This model defines the Drain current based on calculating the degree of polarization from previous gate pulses, the present Gate voltage, and the amount of time since the last Gate volta-e pulse.

Method and infrastructure for cycle-reproducible simulation on large scale digital circuits on a coordinated set of field-programmable gate arrays (FPGAs)

DOEpatents

Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A

2014-01-28

A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.

Label-free fluorescent enzymatic assay of citrate synthase by CoA-Au(I) co-ordination polymer and its application in a multi-enzyme logic gate cascade.

PubMed

Li, Yong; Wang, Huixia; Dai, Futao; Li, Pei; Jin, Xin; Huang, Yan; Nie, Zhou; Yao, Shouzhuo

2016-12-15

Citrate synthase (CS) is one of the key metabolic enzymes in the Krebs tricarboxylic acid (TCA) cycle. It regulates energy generation in mitochondrial respiration by catalysing the reaction between oxaloacetic acid (OAA) and acetyl coenzyme A (Ac-CoA) to generate citrate and coenzyme A (CoA). CS has been shown to be a biomarker of neurological diseases and various kinds of cancers. Here, a label-free fluorescent assay has been developed for homogeneously detecting CS and its inhibitor based on the in situ generation of CoA-Au(I) co-ordination polymer (CP) and the fluorescence signal-on by SYBR Green II-stained CoA-Au(I) CP. Because of the unique property of the CoA-Au(I) CP, this CS activity assay method could achieve excellent selectivity and sensitivity, with a linear range from 0.0033 U/μL to 0.264 U/μL and a limit of detection to be 0.00165 U/μL. Meanwhile, this assay method has advantages of being facile and cost effective with quick detection. Moreover, based on this method, a biomimetic logic system was established by rationally exploiting the cascade enzymatic interactions in TCA cycle for chemical information processing. In the TCA cycle-derived logic system, an AND-AND-AND-cascaded gate was rigorously operated step by step in one pot, and is outputted by a label-free fluorescent signal with visualized readout. Copyright © 2016 Elsevier B.V. All rights reserved.

Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors

NASA Astrophysics Data System (ADS)

Buchanan, D. A.; Marwick, A. D.; Dimaria, D. J.; Dori, L.

1994-09-01

Redistribution of hydrogen caused by hot-electron injection has been studied by hydrogen depth profiling with N-15 nuclear reaction analysis and electrical methods. Internal photoemission and Fowler-Nordheim injection were used for electron injection into large Al-gate and polysilicon-gate capacitors, respectively. A hydrogen-rich layer (about 10(exp 15) atoms/sq cm) observed at the Al/SiO2 interface was found to serve as the source of hydrogen during the hot-electron stress. A small fraction of the hydrogen released from this layer was found to be retrapped near the Si/SiO2 interface for large electron fluences in the Al-gate samples. Within the limit of detectability, about 10(exp 14)/sq cm, no hydrogen was measured using nuclear reaction analysis in the polysilicon-gate samples. The buildup of hydrogen at the Si/SiO2 interface exhibits a threshold at about 1 MV/cm, consistent with the threshold for electron heating in SiO2. In the 'wet' SiO2 films with purposely introduced excess hydrogen, the rate of hydrogen buildup at the Si/SiO2 interface is found to be significantly greater than that found in the 'dry' films. During electron injection, hydrogen redistribution was also confirmed via the deactivation of boron dopant in the silicon substrate. The generation rates of interface states, neutral electron traps, and anomalous positive charge are found to increase with increasing hydrogen buildup in the substrate and the initial hydrogen concentration in the film. It is concluded that the generation of defects is preceded by the hot-electron-induced release and transport of atomic hydrogen and it is the chemical reaction of this species within the metal-oxide-semiconductor structure that generates the electrically active defects.

TestDose: A nuclear medicine software based on Monte Carlo modeling for generating gamma camera acquisitions and dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Marie-Paule, E-mail: marie-paule.garcia@univ-brest.fr; Villoing, Daphnée; McKay, Erin

Purpose: The TestDose platform was developed to generate scintigraphic imaging protocols and associated dosimetry by Monte Carlo modeling. TestDose is part of a broader project (www.dositest.com) whose aim is to identify the biases induced by different clinical dosimetry protocols. Methods: The TestDose software allows handling the whole pipeline from virtual patient generation to resulting planar and SPECT images and dosimetry calculations. The originality of their approach relies on the implementation of functional segmentation for the anthropomorphic model representing a virtual patient. Two anthropomorphic models are currently available: 4D XCAT and ICRP 110. A pharmacokinetic model describes the biodistribution of amore » given radiopharmaceutical in each defined compartment at various time-points. The Monte Carlo simulation toolkit GATE offers the possibility to accurately simulate scintigraphic images and absorbed doses in volumes of interest. The TestDose platform relies on GATE to reproduce precisely any imaging protocol and to provide reference dosimetry. For image generation, TestDose stores user’s imaging requirements and generates automatically command files used as input for GATE. Each compartment is simulated only once and the resulting output is weighted using pharmacokinetic data. Resulting compartment projections are aggregated to obtain the final image. For dosimetry computation, emission data are stored in the platform database and relevant GATE input files are generated for the virtual patient model and associated pharmacokinetics. Results: Two samples of software runs are given to demonstrate the potential of TestDose. A clinical imaging protocol for the Octreoscan™ therapeutical treatment was implemented using the 4D XCAT model. Whole-body “step and shoot” acquisitions at different times postinjection and one SPECT acquisition were generated within reasonable computation times. Based on the same Octreoscan™ kinetics, a dosimetry computation performed on the ICRP 110 model is also presented. Conclusions: The proposed platform offers a generic framework to implement any scintigraphic imaging protocols and voxel/organ-based dosimetry computation. Thanks to the modular nature of TestDose, other imaging modalities could be supported in the future such as positron emission tomography.« less

TestDose: A nuclear medicine software based on Monte Carlo modeling for generating gamma camera acquisitions and dosimetry.

PubMed

Garcia, Marie-Paule; Villoing, Daphnée; McKay, Erin; Ferrer, Ludovic; Cremonesi, Marta; Botta, Francesca; Ferrari, Mahila; Bardiès, Manuel

2015-12-01

The TestDose platform was developed to generate scintigraphic imaging protocols and associated dosimetry by Monte Carlo modeling. TestDose is part of a broader project (www.dositest.com) whose aim is to identify the biases induced by different clinical dosimetry protocols. The TestDose software allows handling the whole pipeline from virtual patient generation to resulting planar and SPECT images and dosimetry calculations. The originality of their approach relies on the implementation of functional segmentation for the anthropomorphic model representing a virtual patient. Two anthropomorphic models are currently available: 4D XCAT and ICRP 110. A pharmacokinetic model describes the biodistribution of a given radiopharmaceutical in each defined compartment at various time-points. The Monte Carlo simulation toolkit gate offers the possibility to accurately simulate scintigraphic images and absorbed doses in volumes of interest. The TestDose platform relies on gate to reproduce precisely any imaging protocol and to provide reference dosimetry. For image generation, TestDose stores user's imaging requirements and generates automatically command files used as input for gate. Each compartment is simulated only once and the resulting output is weighted using pharmacokinetic data. Resulting compartment projections are aggregated to obtain the final image. For dosimetry computation, emission data are stored in the platform database and relevant gate input files are generated for the virtual patient model and associated pharmacokinetics. Two samples of software runs are given to demonstrate the potential of TestDose. A clinical imaging protocol for the Octreoscan™ therapeutical treatment was implemented using the 4D XCAT model. Whole-body "step and shoot" acquisitions at different times postinjection and one SPECT acquisition were generated within reasonable computation times. Based on the same Octreoscan™ kinetics, a dosimetry computation performed on the ICRP 110 model is also presented. The proposed platform offers a generic framework to implement any scintigraphic imaging protocols and voxel/organ-based dosimetry computation. Thanks to the modular nature of TestDose, other imaging modalities could be supported in the future such as positron emission tomography.

An inherent curvature-compensated voltage reference using non-linearity of gate coupling coefficient

NASA Astrophysics Data System (ADS)

Hande, Vinayak; Shojaei Baghini, Maryam

2015-08-01

A novel current-mode voltage reference circuit which is capable of generating sub-1 V output voltage is presented. The proposed architecture exhibits the inherent curvature compensation ability. The curvature compensation is achieved by utilizing the non-linear behavior of gate coupling coefficient to compensate non-linear temperature dependence of base-emitter voltage. We have also utilized the developments in CMOS process to reduce power and area consumption. The proposed voltage reference is analyzed theoretically and compared with other existing methods. The circuit is designed and simulated in 180 nm mixed-mode CMOS UMC technology which gives a reference level of 246 mV. The minimum required supply voltage is 1 V with maximum current drawn of 9.24 μA. A temperature coefficient of 9 ppm/°C is achieved over -25 to 125 °C temperature range. The reference voltage varies by ±11 mV across process corners. The reference circuit shows the line sensitivity of 0.9 mV/V with area consumption of 100 × 110 μm2

Investigation of the Representation of OLEs and Terrain Effects Within the Coastal Zone in the EDMF Parameterization Scheme: An Airborne Doppler Wind Lidar Perspective

DTIC Science & Technology

2012-07-06

layer affected by ground interference. Using this approach for measurements acquired over the Salinas Valley , we showed that additional range gates...demonstrated the benefits of the two-step approach using measurements acquired over the Salinas Valley in central California. The additional range gates...four hours of data between the surface and 3000 m MSL along a 40 km segment of the Salinas Valley during this day. The airborne lidar measurements

Gating mass cytometry data by deep learning.

PubMed

Li, Huamin; Shaham, Uri; Stanton, Kelly P; Yao, Yi; Montgomery, Ruth R; Kluger, Yuval

2017-11-01

Mass cytometry or CyTOF is an emerging technology for high-dimensional multiparameter single cell analysis that overcomes many limitations of fluorescence-based flow cytometry. New methods for analyzing CyTOF data attempt to improve automation, scalability, performance and interpretation of data generated in large studies. Assigning individual cells into discrete groups of cell types (gating) involves time-consuming sequential manual steps, untenable for larger studies. We introduce DeepCyTOF, a standardization approach for gating, based on deep learning techniques. DeepCyTOF requires labeled cells from only a single sample. It is based on domain adaptation principles and is a generalization of previous work that allows us to calibrate between a target distribution and a source distribution in an unsupervised manner. We show that DeepCyTOF is highly concordant (98%) with cell classification obtained by individual manual gating of each sample when applied to a collection of 16 biological replicates of primary immune blood cells, even when measured across several instruments. Further, DeepCyTOF achieves very high accuracy on the semi-automated gating challenge of the FlowCAP-I competition as well as two CyTOF datasets generated from primary immune blood cells: (i) 14 subjects with a history of infection with West Nile virus (WNV), (ii) 34 healthy subjects of different ages. We conclude that deep learning in general, and DeepCyTOF specifically, offers a powerful computational approach for semi-automated gating of CyTOF and flow cytometry data. Our codes and data are publicly available at https://github.com/KlugerLab/deepcytof.git. yuval.kluger@yale.edu. Supplementary data are available at Bioinformatics online. © The Author 2017. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com

Multi-element logic gates for trapped-ion qubits

NASA Astrophysics Data System (ADS)

Tan, T. R.; Gaebler, J. P.; Lin, Y.; Wan, Y.; Bowler, R.; Leibfried, D.; Wineland, D. J.

2015-12-01

Precision control over hybrid physical systems at the quantum level is important for the realization of many quantum-based technologies. In the field of quantum information processing (QIP) and quantum networking, various proposals discuss the possibility of hybrid architectures where specific tasks are delegated to the most suitable subsystem. For example, in quantum networks, it may be advantageous to transfer information from a subsystem that has good memory properties to another subsystem that is more efficient at transporting information between nodes in the network. For trapped ions, a hybrid system formed of different species introduces extra degrees of freedom that can be exploited to expand and refine the control of the system. Ions of different elements have previously been used in QIP experiments for sympathetic cooling, creation of entanglement through dissipation, and quantum non-demolition measurement of one species with another. Here we demonstrate an entangling quantum gate between ions of different elements which can serve as an important building block of QIP, quantum networking, precision spectroscopy, metrology, and quantum simulation. A geometric phase gate between a 9Be+ ion and a 25Mg+ ion is realized through an effective spin-spin interaction generated by state-dependent forces induced with laser beams. Combined with single-qubit gates and same-species entangling gates, this mixed-element entangling gate provides a complete set of gates over such a hybrid system for universal QIP. Using a sequence of such gates, we demonstrate a CNOT (controlled-NOT) gate and a SWAP gate. We further demonstrate the robustness of these gates against thermal excitation and show improved detection in quantum logic spectroscopy. We also observe a strong violation of a CHSH (Clauser-Horne-Shimony-Holt)-type Bell inequality on entangled states composed of different ion species.

Multi-element logic gates for trapped-ion qubits.

PubMed

Tan, T R; Gaebler, J P; Lin, Y; Wan, Y; Bowler, R; Leibfried, D; Wineland, D J

2015-12-17

Precision control over hybrid physical systems at the quantum level is important for the realization of many quantum-based technologies. In the field of quantum information processing (QIP) and quantum networking, various proposals discuss the possibility of hybrid architectures where specific tasks are delegated to the most suitable subsystem. For example, in quantum networks, it may be advantageous to transfer information from a subsystem that has good memory properties to another subsystem that is more efficient at transporting information between nodes in the network. For trapped ions, a hybrid system formed of different species introduces extra degrees of freedom that can be exploited to expand and refine the control of the system. Ions of different elements have previously been used in QIP experiments for sympathetic cooling, creation of entanglement through dissipation, and quantum non-demolition measurement of one species with another. Here we demonstrate an entangling quantum gate between ions of different elements which can serve as an important building block of QIP, quantum networking, precision spectroscopy, metrology, and quantum simulation. A geometric phase gate between a (9)Be(+) ion and a (25)Mg(+) ion is realized through an effective spin-spin interaction generated by state-dependent forces induced with laser beams. Combined with single-qubit gates and same-species entangling gates, this mixed-element entangling gate provides a complete set of gates over such a hybrid system for universal QIP. Using a sequence of such gates, we demonstrate a CNOT (controlled-NOT) gate and a SWAP gate. We further demonstrate the robustness of these gates against thermal excitation and show improved detection in quantum logic spectroscopy. We also observe a strong violation of a CHSH (Clauser-Horne-Shimony-Holt)-type Bell inequality on entangled states composed of different ion species.

Improved two-photon imaging of living neurons in brain tissue through temporal gating

PubMed Central

Gautam, Vini; Drury, Jack; Choy, Julian M. C.; Stricker, Christian; Bachor, Hans-A.; Daria, Vincent R.

2015-01-01

We optimize two-photon imaging of living neurons in brain tissue by temporally gating an incident laser to reduce the photon flux while optimizing the maximum fluorescence signal from the acquired images. Temporal gating produces a bunch of ~10 femtosecond pulses and the fluorescence signal is improved by increasing the bunch-pulse energy. Gating is achieved using an acousto-optic modulator with a variable gating frequency determined as integral multiples of the imaging sampling frequency. We hypothesize that reducing the photon flux minimizes the photo-damage to the cells. Our results, however, show that despite producing a high fluorescence signal, cell viability is compromised when the gating and sampling frequencies are equal (or effectively one bunch-pulse per pixel). We found an optimum gating frequency range that maintains the viability of the cells while preserving a pre-set fluorescence signal of the acquired two-photon images. The neurons are imaged while under whole-cell patch, and the cell viability is monitored as a change in the membrane’s input resistance. PMID:26504651

Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

NASA Astrophysics Data System (ADS)

Poorvasha, S.; Lakshmi, B.

2018-05-01

In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

Environmental Assessment: Anti-Terrorism/Force Protection Gate Projects at Fairchild Air Force Base, Washington

DTIC Science & Technology

2003-09-01

Pollution Prevention Requirements; E.O. 12873 Federal Acquisition, Recycling , and Waste Prevention; E.O. 12902 Energy Efficiency and Water Conservation... recycled or recovered. The management of solid (non-hazardous) waste on Fairchild AFB includes the collection and disposal of solid wastes and... recyclable material. Demolition and inert wastes generated on Environmental Assessment Anti-Terrorism/Force Protection Gate Projects at Fairchild AFB

Field ion source development for neutron generators

NASA Astrophysics Data System (ADS)

Bargsten Johnson, B.; Schwoebel, P. R.; Holland, C. E.; Resnick, P. J.; Hertz, K. L.; Chichester, D. L.

2012-01-01

An ion source based on the principles of electrostatic field desorption is being developed to improve the performance of existing compact neutron generators. The ion source is an array of gated metal tips derived from field electron emitter array microfabrication technology. A comprehensive summary of development and experimental activities is presented. Many structural modifications to the arrays have been incorporated to achieve higher tip operating fields, while lowering fields at the gate electrode to prevent gate field electron emission which initiates electrical breakdown in the array. The latest focus of fabrication activities has been on rounding the gate electrode edge and surrounding the gate electrode with dielectric material. Array testing results have indicated a steady progression of increased array tip operating fields with each new design tested. The latest arrays have consistently achieved fields beyond those required for the onset of deuterium desorption (˜20 V/nm), and have demonstrated the desorption of deuterium at fields up to 36 V/nm. The number of ions desorbed from an array has been quantified, and field desorption of metal tip substrate material from array tips has been observed for the first time. Gas-phase field ionization studies with ˜10,000 tip arrays have achieved deuterium ion currents of ˜50 nA. Neutron production by field ionization has yielded ˜10 2 n/s from ˜1 mm 2 of array area using the deuterium-deuterium fusion reaction at 90 kV.

A gated LaBr3(Ce) detector for border protection applications

NASA Astrophysics Data System (ADS)

Etile, A.; Denis-Petit, D.; Gaudefroy, L.; Meot, V.; Roig, O.

2018-01-01

We report on the dedicated implementation of the blocking technique for a LaBr3(Ce) detector as well as associated electronics and data acquisition system for border protection applications. The detector is meant to perform delayed γ-ray spectroscopy of fission fragments produced via photofission induced by a high intensity pulsed photon beam. The gating technique avoids saturation of the detection chain during irradiation. The resulting setup allows us to successfully perform delayed γ-ray spectroscopy starting only 30 ns after the gating operation. The measured energy resolution ranges from 5% to 6.5% at 662 keV depending on the γ-ray detection time after the gating operation.

5. POWERHOUSE, PELTONFRANCIS TURBINES (GENERATORS) UNITS NOS. 1 AND 2 ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

5. POWERHOUSE, PELTON-FRANCIS TURBINES (GENERATORS) UNITS NOS. 1 AND 2 WITH REGULATOR PANEL AT LEFT AND GATE VALVE IN CENTER FOREGROUND - Yosemite Hydroelectric Power Plant, Highways 120 & 140, Yosemite Village, Mariposa County, CA

Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms.

PubMed

Pruttivarasin, Thaned; Katori, Hidetoshi

2015-11-01

We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

Compact field programmable gate array-based pulse-sequencer and radio-frequency generator for experiments with trapped atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pruttivarasin, Thaned, E-mail: thaned.pruttivarasin@riken.jp; Katori, Hidetoshi; Innovative Space-Time Project, ERATO, JST, Bunkyo-ku, Tokyo 113-8656

We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.

Extracting current induced spins from topological insulator wires: gate control of extracted spin polarization

NASA Astrophysics Data System (ADS)

Adagideli, Inanc

Spin-momentum locking featured by the surface states of 3D topological insulators (TIs) allows electrical generation of spin accumulations and provides a new avenue for spintronics applications. In this work, we explore how to extract electrically induced spins from topological insulator surfaces, where they are generated into topologically trivial metallic leads that are commonly used in conventional electronic devices. We first focus on an effective surface theory of current induced spin accumulation in topological insulators. Then we focus on a particular geometry: a metallic pocket attached to top and side faces of a 3D topological insulator quantum wire with a rectangular cross section, and explore spin extraction into topologically non-trivial materials. We find surprisingly that the doping in and/or a gate voltage applied to the metallic side pocket can control the direction of the extracted spin polarization opening the possibility for a spin transistor operation of these device geometries. We also perform numerical simulations of nonequilibrium spin accumulations generated by an applied bias in the same geometry and demonstrate the spin polarization control via applied gate voltages. Work funded by TUBITAK Grant No 114F163.

Multisteric TRPV1 nocisensor: a target for analgesics.

PubMed

Szolcsányi, János; Sándor, Zoltán

2012-12-01

Cloning of the transient receptor potential vanilloid type 1 (TRPV1), the heat-gated cation channel/capsaicin receptor expressed by sensory neurons, has opened the door for development of new types of analgesics that selectively act on nociceptors. Here we summarize mutagenetic evidence for selective loss of responsiveness to vanilloids, protons, and heat stimuli to provide clues for avoiding on-target side effects of hyperthermia and burn risk. It is suggested that the complex chemoceptive thermosensor function of TRPV1 (which is modulated by depolarizing stimuli) can be attributed to multisteric gating functions. In this way, it forms the prototype of a new class of ion channels different from the canonical voltage-gated and ligand-gated ones. Several endogenous lipid ligands activate and inhibit TRPV1 and its gating initiates sensory transducer and mediator-releasing functions. Second generation TRPV1 antagonists that do not induce hyperthermia are under development, and a dermal capsaicin patch is already on the market for long-term treatment of neuropathic pain. Copyright © 2012 Elsevier Ltd. All rights reserved.

Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

PubMed Central

Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian

2017-01-01

Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air–SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand. PMID:28649986

Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

NASA Astrophysics Data System (ADS)

Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian

2017-06-01

Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air-SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.

Voltage gating by molecular subunits of Na+ and K+ ion channels: higher-dimensional cubic kinetics, rate constants, and temperature.

PubMed

Fohlmeister, Jürgen F

2015-06-01

The structural similarity between the primary molecules of voltage-gated Na and K channels (alpha subunits) and activation gating in the Hodgkin-Huxley model is brought into full agreement by increasing the model's sodium kinetics to fourth order (m(3) → m(4)). Both structures then virtually imply activation gating by four independent subprocesses acting in parallel. The kinetics coalesce in four-dimensional (4D) cubic diagrams (16 states, 32 reversible transitions) that show the structure to be highly failure resistant against significant partial loss of gating function. Rate constants, as fitted in phase plot data of retinal ganglion cell excitation, reflect the molecular nature of the gating transitions. Additional dimensions (6D cubic diagrams) accommodate kinetically coupled sodium inactivation and gating processes associated with beta subunits. The gating transitions of coupled sodium inactivation appear to be thermodynamically irreversible; response to dielectric surface charges (capacitive displacement) provides a potential energy source for those transitions and yields highly energy-efficient excitation. A comparison of temperature responses of the squid giant axon (apparently Arrhenius) and mammalian channel gating yields kinetic Q10 = 2.2 for alpha unit gating, whose transitions are rate-limiting at mammalian temperatures; beta unit kinetic Q10 = 14 reproduces the observed non-Arrhenius deviation of mammalian gating at low temperatures; the Q10 of sodium inactivation gating matches the rate-limiting component of activation gating at all temperatures. The model kinetics reproduce the physiologically large frequency range for repetitive firing in ganglion cells and the physiologically observed strong temperature dependence of recovery from inactivation. Copyright © 2015 the American Physiological Society.

Magnetic field exposure of commercial airline pilots.

PubMed

Hood; Nicholas; Butler; Lackland; Hoel; Mohr

2000-10-01

PURPOSE: Airline pilots are exposed to magnetic fields generated by the aircraft's electrical and electronic systems. The purpose of this study was to directly measure the flight deck magnetic fields to which commercial airline pilots are exposed when flying on different aircraft types over a 75-hour flight-duty month.METHODS: Magentic field measurements were taken using personal dosimeters capable of measuring magnetic fields in the 40-800 Hz frequency range. Dosimeters were carried by either the Captain or the First Officer on Boeing 737/200, Boeing 747/400, Boeing 767/300ER, and Airbus 320 aircraft. The data were analyzed by aircraft type, with statistics based on block hours. Block hours begin when the aircraft departs the gate prior to take off and end when the aircraft returns to the gate after landing.RESULTS: Approximately 1008 block hours were recorded at a sampling rate of 3 seconds. Total block time exposure to the pilots ranged from a harmonic geometric mean of 6.7 milliGauss (mG) for the Boeing 767/300ER to 12.7 mG for the Boeing 737/200.CONCLUSIONS: Measured flight deck magnetic field levels were substantially above the 0.8 to 1 mG level typically found in the home or office and suggest the need for further study to evaluate potential health effects of long-term exposure.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Moving target detection in flash mode against stroboscopic mode by active range-gated laser imaging

NASA Astrophysics Data System (ADS)

Zhang, Xuanyu; Wang, Xinwei; Sun, Liang; Fan, Songtao; Lei, Pingshun; Zhou, Yan; Liu, Yuliang

2018-01-01

Moving target detection is important for the application of target tracking and remote surveillance in active range-gated laser imaging. This technique has two operation modes based on the difference of the number of pulses per frame: stroboscopic mode with the accumulation of multiple laser pulses per frame and flash mode with a single shot of laser pulse per frame. In this paper, we have established a range-gated laser imaging system. In the system, two types of lasers with different frequency were chosen for the two modes. Electric fan and horizontal sliding track were selected as the moving targets to compare the moving blurring between two modes. Consequently, the system working in flash mode shows more excellent performance in motion blurring against stroboscopic mode. Furthermore, based on experiments and theoretical analysis, we presented the higher signal-to-noise ratio of image acquired by stroboscopic mode than flash mode in indoor and underwater environment.

Noncollinear generation of optical spatiotemporal solitons and application to ultrafast digital logic

NASA Astrophysics Data System (ADS)

Liu, Xiang; Beckwitt, Kale; Wise, Frank

2000-05-01

We demonstrate theoretically and experimentally that spatiotemporal solitons can be generated through noncollinear second-harmonic generation. The resulting Y geometry could be used to implement an optical AND gate with ultrafast, high-contrast operation but without sensitivity to the phases of the input pulses.

Control-structure ratings on the Chicago Sanitary and Ship Canal near Lockport, Illinois

USGS Publications Warehouse

Straub, Timothy D.; Johnson, Kevin K.; Hortness, Jon E.; Duncker, James J.

2012-01-01

The U.S. Army Corps of Engineers and the Metropolitan Water Reclamation District of Greater Chicago regulate flows through control structures along the Lake Michigan lakefront and the Chicago Sanitary and Ship Canal (CSSC) for Lake Michigan diversion accounting, flood control, sanitary, and navigation purposes. This report documents the measurement and computation of flow through the Lockport Controlling Works (LCW) and the Lockport Powerhouse. This analysis aided in evaluation of the ratings at both structures, and the development of new ratings at the controlling works. The LCW structure consists of seven 30-feet (ft) wide sluice gates and is used to divert water from the CSSC and into the Des Plaines River. The flow regimes for the sluice gate included both free and submerged weir. Forty and 491 flow values from U.S. Geological Survey streamflow-gaging stations were used to develop equations describing free- and submerged-weir flow, respectively, through the sluice gates. The equations were developed for canal headwater elevations ranging from -7.0 to -10.5 ft Chicago City Datum (CCD), and tailwater (Des Plaines River at Lockport) to headwater (CSSC-LCW-Base) ratios ranging from 0.31 to 0.66. The Lockport Powerhouse structure consists of nine 9-ft wide by 14-ft high sluice gates and two 10-ft diameter turbines. Both tailwater and no-tailwater effect flow regimes occurred during nine measurements. Also, the canal headwater elevations ranged from -2.74 to -8.45 ft CCD, and the gates were configured six different ways during the measurements.

Dual gated PET/CT imaging of small targets of the heart: method description and testing with a dynamic heart phantom.

PubMed

Kokki, Tommi; Sipilä, Hannu T; Teräs, Mika; Noponen, Tommi; Durand-Schaefer, Nicolas; Klén, Riku; Knuuti, Juhani

2010-01-01

In PET imaging respiratory and cardiac contraction motions interfere the imaging of heart. The aim was to develop and evaluate dual gating method for improving the detection of small targets of the heart. The method utilizes two independent triggers which are sent periodically into list mode data based on respiratory and ECG cycles. An algorithm for generating dual gated segments from list mode data was developed. The test measurements showed that rotational and axial movements of point source can be separated spatially to different segments with well-defined borders. The effect of dual gating on detection of small moving targets was tested with a moving heart phantom. Dual gated images showed 51% elimination (3.6 mm out of 7.0 mm) of contraction motion of hot spot (diameter 3 mm) and 70% elimination (14 mm out of 20 mm) of respiratory motion. Averaged activity value of hot spot increases by 89% when comparing to non-gated images. Patient study of suspected cardiac sarcoidosis shows sharper spatial myocardial uptake profile and improved detection of small myocardial structures such as papillary muscles. The dual gating method improves detection of small moving targets in a phantom and it is feasible in clinical situations.

A digital boxcar integrator for IMS spectra

NASA Technical Reports Server (NTRS)

Cohen, Martin J.; Stimac, Robert M.; Wernlund, Roger F.; Parker, Donald C.

1995-01-01

When trying to detect or quantify a signal at or near the limit of detectability, it is invariably embeded in the noise. This statement is true for nearly all detectors of any physical phenomena and the limit of detectability, hopefully, occurs at very low signal-to-noise levels. This is particularly true of IMS (Ion Mobility Spectrometers) spectra due to the low vapor pressure of several chemical compounds of great interest and the small currents associated with the ionic detection process. Gated Integrators and Boxcar Integrators or Averagers are designed to recover fast, repetitive analog signals. In a typical application, a time 'Gate' or 'Window' is generated, characterized by a set delay from a trigger or gate pulse and a certain width. A Gated Integrator amplifies and integrates the signal that is present during the time the gate is open, ignoring noise and interference that may be present at other times. Boxcar Integration refers to the practice of averaging the output of the Gated Integrator over many sweeps of the detector. Since any signal present during the gate will add linearly, while noise will add in a 'random walk' fashion as the square root of the number of sweeps, averaging N sweeps will improve the 'Signal-to-Noise Ratio' by a factor of the square root of N.

Learning to use working memory: a reinforcement learning gating model of rule acquisition in rats

PubMed Central

Lloyd, Kevin; Becker, Nadine; Jones, Matthew W.; Bogacz, Rafal

2012-01-01

Learning to form appropriate, task-relevant working memory representations is a complex process central to cognition. Gating models frame working memory as a collection of past observations and use reinforcement learning (RL) to solve the problem of when to update these observations. Investigation of how gating models relate to brain and behavior remains, however, at an early stage. The current study sought to explore the ability of simple RL gating models to replicate rule learning behavior in rats. Rats were trained in a maze-based spatial learning task that required animals to make trial-by-trial choices contingent upon their previous experience. Using an abstract version of this task, we tested the ability of two gating algorithms, one based on the Actor-Critic and the other on the State-Action-Reward-State-Action (SARSA) algorithm, to generate behavior consistent with the rats'. Both models produced rule-acquisition behavior consistent with the experimental data, though only the SARSA gating model mirrored faster learning following rule reversal. We also found that both gating models learned multiple strategies in solving the initial task, a property which highlights the multi-agent nature of such models and which is of importance in considering the neural basis of individual differences in behavior. PMID:23115551

VHDL Implementation of Sigma-Delta Analog To Digital Converter

NASA Astrophysics Data System (ADS)

Chavan, R. N.; Chougule, D. G.

2010-11-01

Sigma-Delta modulation techniques provide a range of opportunities in a signal processing system for both increasing performance and data path optimization along the silicon area axis in the design space. One of the most challenging tasks in Analog to Digital Converter (ADC) design is to adapt the circuitry to ever new CMOS process technology. For digital circuits the number of gates per square mm app. doubles per chip generation. Integration of analog parts in newer deep submicron technologies is much more tough and additionally complicated because the usable voltage ranges are decreasing with every new integration step. This paper shows an approach which only uses 2 resistors and 1 capacitor which are located outside a pure digital chip. So all integration advantages of pure digital chips are preserved, there is no design effort for a new chip generation and the ADC also can be used for FPGAs. Resolutions of up to 16 bit are achievable. Sample rates in the 1 MHz region are feasible so that the approach is also useful for ADCs for xDSL technologies.

Compact sub-nanosecond pulse seed source with diode laser driven by a high-speed circuit

NASA Astrophysics Data System (ADS)

Wang, Xiaoqian; Wang, Bo; Wang, Junhua; Cheng, Wenyong

2018-06-01

A compact sub-nanosecond pulse seed source with 1550 nm diode laser (DL) was obtained by employing a high-speed circuit. The circuit mainly consisted of a short pulse generator and a short pulse driver. The short pulse generator, making up of a complex programmable logic device (CPLD), a level translator, two programmable delay chips and an AND gate chip, output a triggering signal to control metal-oxide-semiconductor field-effect transistor (MOSFET) switch of the short pulse driver. The MOSFET switch with fast rising time and falling time both shorter than 1 ns drove the DL to emit short optical pulses. Performances of the pulse seed source were tested. The results showed that continuously adjustable repetition frequency ranging from 500 kHz to 100 MHz and pulse duration in the range of 538 ps to 10 ns were obtained, respectively. 537 μW output was obtained at the highest repetition frequency of 100 MHz with the shortest pulse duration of 538 ps. These seed pulses were injected into an fiber amplifier, and no optical pulse distortions were found.

Schemes generating entangled states and entanglement swapping between photons and three-level atoms inside optical cavities for quantum communication

NASA Astrophysics Data System (ADS)

Heo, Jino; Kang, Min-Sung; Hong, Chang-Ho; Yang, Hyeon; Choi, Seong-Gon

2017-01-01

We propose quantum information processing schemes based on cavity quantum electrodynamics (QED) for quantum communication. First, to generate entangled states (Bell and Greenberger-Horne-Zeilinger [GHZ] states) between flying photons and three-level atoms inside optical cavities, we utilize a controlled phase flip (CPF) gate that can be implemented via cavity QED). Subsequently, we present an entanglement swapping scheme that can be realized using single-qubit measurements and CPF gates via optical cavities. These schemes can be directly applied to construct an entanglement channel for a communication system between two users. Consequently, it is possible for the trust center, having quantum nodes, to accomplish the linked channel (entanglement channel) between the two separate long-distance users via the distribution of Bell states and entanglement swapping. Furthermore, in our schemes, the main physical component is the CPF gate between the photons and the three-level atoms in cavity QED, which is feasible in practice. Thus, our schemes can be experimentally realized with current technology.

Oxide-based synaptic transistors gated by solution-processed gelatin electrolytes

NASA Astrophysics Data System (ADS)

He, Yinke; Sun, Jia; Qian, Chuan; Kong, Ling-An; Gou, Guangyang; Li, Hongjian

2017-04-01

In human brain, a large number of neurons are connected via synapses. Simulation of the synaptic behaviors using electronic devices is the most important step for neuromorphic systems. In this paper, proton conducting gelatin electrolyte-gated oxide field-effect transistors (FETs) were used for emulating synaptic functions, in which the gate electrode is regarded as pre-synaptic neuron and the channel layer as the post-synaptic neuron. In analogy to the biological synapse, a potential spike can be applied at the gate electrode and trigger ionic motion in the gelatin electrolyte, which in turn generates excitatory post-synaptic current (EPSC) in the channel layer. Basic synaptic behaviors including spike time-dependent EPSC, paired-pulse facilitation (PPF), self-adaptation, and frequency-dependent synaptic transmission were successfully mimicked. Such ionic/electronic hybrid devices are beneficial for synaptic electronics and brain-inspired neuromorphic systems.

Impact Assessment and Environmental Evaluation of Various Ammonia Production Processes

NASA Astrophysics Data System (ADS)

Bicer, Yusuf; Dincer, Ibrahim; Vezina, Greg; Raso, Frank

2017-05-01

In the current study, conventional resources-based ammonia generation routes are comparatively studied through a comprehensive life cycle assessment. The selected ammonia generation options range from mostly used steam methane reforming to partial oxidation of heavy oil. The chosen ammonia synthesis process is the most common commercially available Haber-Bosch process. The essential energy input for the methods are used from various conventional resources such as coal, nuclear, natural gas and heavy oil. Using the life cycle assessment methodology, the environmental impacts of selected methods are identified and quantified from cradle to gate. The life cycle assessment outcomes of the conventional resources based ammonia production routes show that nuclear electrolysis-based ammonia generation method yields the lowest global warming and climate change impacts while the coal-based electrolysis options bring higher environmental problems. The calculated greenhouse gas emission from nuclear-based electrolysis is 0.48 kg CO2 equivalent while it is 13.6 kg CO2 per kg of ammonia for coal-based electrolysis method.

Impact Assessment and Environmental Evaluation of Various Ammonia Production Processes.

PubMed

Bicer, Yusuf; Dincer, Ibrahim; Vezina, Greg; Raso, Frank

2017-05-01

In the current study, conventional resources-based ammonia generation routes are comparatively studied through a comprehensive life cycle assessment. The selected ammonia generation options range from mostly used steam methane reforming to partial oxidation of heavy oil. The chosen ammonia synthesis process is the most common commercially available Haber-Bosch process. The essential energy input for the methods are used from various conventional resources such as coal, nuclear, natural gas and heavy oil. Using the life cycle assessment methodology, the environmental impacts of selected methods are identified and quantified from cradle to gate. The life cycle assessment outcomes of the conventional resources based ammonia production routes show that nuclear electrolysis-based ammonia generation method yields the lowest global warming and climate change impacts while the coal-based electrolysis options bring higher environmental problems. The calculated greenhouse gas emission from nuclear-based electrolysis is 0.48 kg CO 2 equivalent while it is 13.6 kg CO 2 per kg of ammonia for coal-based electrolysis method.

Method and apparatus for measuring the intensity and phase of an ultrashort light pulse

DOEpatents

Kane, Daniel J.; Trebino, Rick P.

1998-01-01

The pulse shape I(t) and phase evolution x(t) of ultrashort light pulses are obtained using an instantaneously responding nonlinear optical medium to form a signal pulse. A light pulse, such a laser pulse, is split into a gate pulse and a probe pulse, where the gate pulse is delayed relative to the probe pulse. The gate pulse and the probe pulse are combined within an instantaneously responding optical medium to form a signal pulse functionally related to a temporal slice of the gate pulse corresponding to the time delay of the probe pulse. The signal pulse is then input to a wavelength-selective device to output pulse field information comprising intensity vs. frequency for a first value of the time delay. The time delay is varied over a range of values effective to yield an intensity plot of signal intensity vs. wavelength and delay. In one embodiment, the beams are overlapped at an angle so that a selected range of delay times is within the intersection to produce a simultaneous output over the time delays of interest.

NOTE: Fluoroscopic gating without implanted fiducial markers for lung cancer radiotherapy based on support vector machines

NASA Astrophysics Data System (ADS)

Cui, Ying; Dy, Jennifer G.; Alexander, Brian; Jiang, Steve B.

2008-08-01

Various problems with the current state-of-the-art techniques for gated radiotherapy have prevented this new treatment modality from being widely implemented in clinical routine. These problems are caused mainly by applying various external respiratory surrogates. There might be large uncertainties in deriving the tumor position from external respiratory surrogates. While tracking implanted fiducial markers has sufficient accuracy, this procedure may not be widely accepted due to the risk of pneumothorax. Previously, we have developed a technique to generate gating signals from fluoroscopic images without implanted fiducial markers using template matching methods (Berbeco et al 2005 Phys. Med. Biol. 50 4481-90, Cui et al 2007b Phys. Med. Biol. 52 741-55). In this note, our main contribution is to provide a totally different new view of the gating problem by recasting it as a classification problem. Then, we solve this classification problem by a well-studied powerful classification method called a support vector machine (SVM). Note that the goal of an automated gating tool is to decide when to turn the beam ON or OFF. We treat ON and OFF as the two classes in our classification problem. We create our labeled training data during the patient setup session by utilizing the reference gating signal, manually determined by a radiation oncologist. We then pre-process these labeled training images and build our SVM prediction model. During treatment delivery, fluoroscopic images are continuously acquired, pre-processed and sent as an input to the SVM. Finally, our SVM model will output the predicted labels as gating signals. We test the proposed technique on five sequences of fluoroscopic images from five lung cancer patients against the reference gating signal as ground truth. We compare the performance of the SVM to our previous template matching method (Cui et al 2007b Phys. Med. Biol. 52 741-55). We find that the SVM is slightly more accurate on average (1-3%) than the template matching method, when delivering the target dose. And the average duty cycle is 4-6% longer. Given the very limited patient dataset, we cannot conclude that the SVM is more accurate and efficient than the template matching method. However, our preliminary results show that the SVM is a potentially precise and efficient algorithm for generating gating signals for radiotherapy. This work demonstrates that the gating problem can be considered as a classification problem and solved accordingly.

The LER/LWR metrology challenge for advance process control through 3D-AFM and CD-SEM

NASA Astrophysics Data System (ADS)

Faurie, P.; Foucher, J.; Foucher, A.-L.

2009-12-01

The continuous shrinkage in dimensions of microelectronic devices has reached such level, with typical gate length in advance R&D of less than 20nm combine with the introduction of new architecture (FinFET, Double gate...) and new materials (porous interconnect material, 193 immersion resist, metal gate material, high k materials...), that new process parameters have to be well understood and well monitored to guarantee sufficient production yield in a near future. Among these parameters, there are the critical dimensions (CD) associated to the sidewall angle (SWA) values, the line edge roughness (LER) and the line width roughness (LWR). Thus, a new metrology challenge has appeared recently and consists in measuring "accurately" the fabricated patterns on wafers in addition to measure the patterns on a repeatable way. Therefore, a great effort has to be done on existing techniques like CD-SEM, Scatterometry and 3D-AFM in order to develop them following the two previous criteria: Repeatability and Accuracy. In this paper, we will compare the 3D-AFM and CD-SEM techniques as a mean to measure LER and LWR on silicon and 193 resist and point out CD-SEM impact on the material during measurement. Indeed, depending on the material type, the interaction between the electron beam and the material or between the AFM tip and the material can vary a lot and subsequently can generate measurements bias. The first results tend to show that depending on CD-SEM conditions (magnification, number of acquisition frames) the final outputs can vary on a large range and therefore show that accuracy in such measurements are really not obvious to obtain. On the basis of results obtained on various materials that present standard sidewall roughness, we will show the limit of each technique and will propose different ways to improve them in order to fulfil advance roadmap requirements for the development of the next IC generation.

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

NASA Astrophysics Data System (ADS)

Zhang, Zuocheng; Feng, Xiao; Wang, Jing; Lian, Biao; Zhang, Jinsong; Chang, Cuizu; Guo, Minghua; Ou, Yunbo; Feng, Yang; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

2017-10-01

The recent experimental observation of the quantum anomalous Hall effect has cast significant attention on magnetic topological insulators. In these magnetic counterparts of conventional topological insulators such as Bi2Te3, a long-range ferromagnetic state can be established by chemical doping with transition-metal elements. However, a much richer electronic phase diagram can emerge and, in the specific case of Cr-doped Bi2(SexTe1-x)3, a magnetic quantum phase transition tuned by the actual chemical composition has been reported. From an application-oriented perspective, the relevance of these results hinges on the possibility to manipulate magnetism and electronic band topology by external perturbations such as an electric field generated by gate electrodes—similar to what has been achieved in conventional diluted magnetic semiconductors. Here, we investigate the magneto-transport properties of Cr-doped Bi2(SexTe1-x)3 with different compositions under the effect of a gate voltage. The electric field has a negligible effect on magnetic order for all investigated compositions, with the remarkable exception of the sample close to the topological quantum critical point, where the gate voltage reversibly drives a ferromagnetic-to-paramagnetic phase transition. Theoretical calculations show that a perpendicular electric field causes a shift in the electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and, in turn, a magnetic phase transition.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gelinck, G. H., E-mail: Gerwin.Gelinck@tno.nl; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven; Breemen, A. J. J. M. van

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

Roll Angle Estimation Using Thermopiles for a Flight Controlled Mortar

DTIC Science & Technology

2012-06-01

Using Xilinx’s System generator, the entire design was implemented at a relatively high level within Malab’s Simulink. This allowed VHDL code to...thermopile data with a Recursive Least Squares (RLS) filter implemented on a field programmable gate array (FPGA). These results demonstrate the...accurately estimated by processing the thermopile data with a Recursive Least Squares (RLS) filter implemented on a field programmable gate array (FPGA

77 FR 56826 - Red River Hydro LLC; Notice of Application Accepted for Filing, Soliciting Motions To Intervene...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-14

... generate power using flows between 2,700 and 49,800 cubic feet per second (cfs). If flows are less than 2,700 cfs, all flow would go through the Corps' gates, and the project would then be offline. When flows are greater than 49,800 cfs, the excess flow would be directed through the Corps' gates. m. A copy of...

CADAT network translator

NASA Technical Reports Server (NTRS)

Pitts, E. R.

1981-01-01

Program converts cell-net data into logic-gate models for use in test and simulation programs. Input consists of either Place, Route, and Fold (PRF) or Place-and-Route-in-Two-Dimensions (PR2D) layout data deck. Output consists of either Test Pattern Generator (TPG) or Logic-Simulation (LOGSIM) logic circuitry data deck. Designer needs to build only logic-gate-model circuit description since program acts as translator. Language is FORTRAN IV.

Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.

PubMed

Xiong, Yuhua; Chen, Xiaoqiang; Wei, Feng; Du, Jun; Zhao, Hongbin; Tang, Zhaoyun; Tang, Bo; Wang, Wenwu; Yan, Jiang

2016-12-01

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm 2 @ (V fb  - 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher I on /I off ratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO 2 . With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high I on , I on /I off ratio in the magnitude of 10 5 , and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.

Data-driven optimal binning for respiratory motion management in PET.

PubMed

Kesner, Adam L; Meier, Joseph G; Burckhardt, Darrell D; Schwartz, Jazmin; Lynch, David A

2018-01-01

Respiratory gating has been used in PET imaging to reduce the amount of image blurring caused by patient motion. Optimal binning is an approach for using the motion-characterized data by binning it into a single, easy to understand/use, optimal bin. To date, optimal binning protocols have utilized externally driven motion characterization strategies that have been tuned with population-derived assumptions and parameters. In this work, we are proposing a new strategy with which to characterize motion directly from a patient's gated scan, and use that signal to create a patient/instance-specific optimal bin image. Two hundred and nineteen phase-gated FDG PET scans, acquired using data-driven gating as described previously, were used as the input for this study. For each scan, a phase-amplitude motion characterization was generated and normalized using principle component analysis. A patient-specific "optimal bin" window was derived using this characterization, via methods that mirror traditional optimal window binning strategies. The resulting optimal bin images were validated by correlating quantitative and qualitative measurements in the population of PET scans. In 53% (n = 115) of the image population, the optimal bin was determined to include 100% of the image statistics. In the remaining images, the optimal binning windows averaged 60% of the statistics and ranged between 20% and 90%. Tuning the algorithm, through a single acceptance window parameter, allowed for adjustments of the algorithm's performance in the population toward conservation of motion or reduced noise-enabling users to incorporate their definition of optimal. In the population of images that were deemed appropriate for segregation, average lesion SUV max were 7.9, 8.5, and 9.0 for nongated images, optimal bin, and gated images, respectively. The Pearson correlation of FWHM measurements between optimal bin images and gated images were better than with nongated images, 0.89 and 0.85, respectively. Generally, optimal bin images had better resolution than the nongated images and better noise characteristics than the gated images. We extended the concept of optimal binning to a data-driven form, updating a traditionally one-size-fits-all approach to a conformal one that supports adaptive imaging. This automated strategy was implemented easily within a large population and encapsulated motion information in an easy to use 3D image. Its simplicity and practicality may make this, or similar approaches ideal for use in clinical settings. © 2017 American Association of Physicists in Medicine.

TU-E-BRB-08: Dual Gated Volumetric Modulated Arc Therapy.

PubMed

Wu, J; Fahimian, B; Wu, H; Xing, L

2012-06-01

Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging treatment modality for Stereotactic Body Radiotherapy (SBRT). However, gating significantly prolongs treatment time. In order to enhance treatment efficiency, a novel dual gated VMAT, in which dynamic arc deliveries are executed sequentially in alternating exhale and inhale phases, is proposed and evaluated experimentally. The essence of dual gated VMAT is to take advantage of the natural pauses that occur at inspiration and exhalation by alternatively delivering the dose at the two phases, instead of the exhale window only. The arc deliveries at the two phases are realized by rotating gantry forward at the exhale window and backward at the inhale in an alternative fashion. Custom XML scripts were developed in Varian's TrueBeam STx Developer Mode to enable dual gated VMAT delivery. RapidArc plans for a lung case were generated for both inhale and exhale phases. The two plans were then combined into a dual gated arc by interleaving the arc treatment nodes of the two RapidArc plans. The dual gated plan was delivered in the development mode of TrueBeam LINAC onto a motion phantom and the delivery was measured by using pinpoint chamber/film/diode array (delta 4). The measured dose distribution was compared with that computed using Eclipse AAA algorithm. The treatment delivery time was recorded and compared with the corresponding single gated plans. Relative to the corresponding single gated delivery, it was found that treatment time efficiency was improved by 95.5% for the case studied here. Pinpoint chamber absolute dose measurement agreed the calculation to within 0.7%. Diode chamber array measurements revealed that 97.5% of measurement points of dual gated RapidArc delivery passed the 3% and 3mm gamma-test criterion. A dual gated VMAT treatment has been developed and implemented successfully with nearly doubled treatment delivery efficiency. © 2012 American Association of Physicists in Medicine.

Underwater Turbulence Detection Using Gated Wavefront Sensing Technique

PubMed Central

Bi, Ying; Xu, Xiping; Chow, Eddy Mun Tik

2018-01-01

Laser sensing has been applied in various underwater applications, ranging from underwater detection to laser underwater communications. However, there are several great challenges when profiling underwater turbulence effects. Underwater detection is greatly affected by the turbulence effect, where the acquired image suffers excessive noise, blurring, and deformation. In this paper, we propose a novel underwater turbulence detection method based on a gated wavefront sensing technique. First, we elaborate on the operating principle of gated wavefront sensing and wavefront reconstruction. We then setup an experimental system in order to validate the feasibility of our proposed method. The effect of underwater turbulence on detection is examined at different distances, and under different turbulence levels. The experimental results obtained from our gated wavefront sensing system indicate that underwater turbulence can be detected and analyzed. The proposed gated wavefront sensing system has the advantage of a simple structure and high detection efficiency for underwater environments. PMID:29518889

Technical Note: Evaluation of the latency and the beam characteristics of a respiratory gating system using an Elekta linear accelerator and a respiratory indicator device, Abches.

PubMed

Saito, Masahide; Sano, Naoki; Ueda, Koji; Shibata, Yuki; Kuriyama, Kengo; Komiyama, Takafumi; Marino, Kan; Aoki, Shinichi; Onishi, Hiroshi

2018-01-01

To evaluate the basic performance of a respiratory gating system using an Elekta linac and an Abches respiratory-monitoring device. The gating system was comprised of an Elekta Synergy linac equipped with a Response TM gating interface module and an Abches respiratory-monitoring device. The latencies from a reference respiratory signal to the resulting Abches gating output signal and the resulting monitor-ion-chamber output signal were measured. Then, the flatness and symmetry of the gated beams were measured using a two-dimensional ionization chamber array for fixed and arc beams, respectively. Furthermore, the beam quality, TPR 20,10 , and the output of the fixed gated beams were also measured using a Farmer chamber. Each of the beam characteristics was compared with each of those for nongated irradiation. The full latencies at beam-on and beam-off for 6-MV gated beams were 336.4 ± 23.4 ms and 87.6 ± 7.1 ms, respectively. The differences in flatness between the gated and nongated beams were within 0.91% and 0.87% for the gun-target and left-right directions, respectively. In the same manner, the beam symmetries were within 0.68% and 0.82%, respectively. The percentage differences in beam quality and beam output were below 1% for a beam-on time range of 1.1-7 s. The latency of the Elekta gating system combined with Abches was found to be acceptable using our measurement method. Furthermore, we demonstrated that the beam characteristics of the gating system using our respiratory indicator were comparable with the nongated beams for a single-arc gated beam delivery. © 2017 American Association of Physicists in Medicine.

Reverse-engineering flow-cytometry gating strategies for phenotypic labelling and high-performance cell sorting.

PubMed

Becht, Etienne; Simoni, Yannick; Coustan-Smith, Elaine; Maximilien, Evrard; Cheng, Yang; Ng, Lai Guan; Campana, Dario; Newell, Evan

2018-06-21

Recent flow and mass cytometers generate datasets of dimensions 20 to 40 and a million single cells. From these, many tools facilitate the discovery of new cell populations associated with diseases or physiology. These new cell populations require the identification of new gating strategies, but gating strategies become exponentially more difficult to optimize when dimensionality increases. To facilitate this step, we developed Hypergate, an algorithm which given a cell population of interest identifies a gating strategy optimized for high yield and purity. Hypergate achieves higher yield and purity than human experts, Support Vector Machines and Random-Forests on public datasets. We use it to revisit some established gating strategies for the identification of innate lymphoid cells, which identifies concise and efficient strategies that allow gating these cells with fewer parameters but higher yield and purity than the current standards. For phenotypic description, Hypergate's outputs are consistent with fields' knowledge and sparser than those from a competing method. Hypergate is implemented in R and available on CRAN. The source code is published at http://github.com/ebecht/hypergate under an Open Source Initiative-compliant licence. Supplementary data are available at Bioinformatics online.

Evaluation of stochastic differential equation approximation of ion channel gating models.

PubMed

Bruce, Ian C

2009-04-01

Fox and Lu derived an algorithm based on stochastic differential equations for approximating the kinetics of ion channel gating that is simpler and faster than "exact" algorithms for simulating Markov process models of channel gating. However, the approximation may not be sufficiently accurate to predict statistics of action potential generation in some cases. The objective of this study was to develop a framework for analyzing the inaccuracies and determining their origin. Simulations of a patch of membrane with voltage-gated sodium and potassium channels were performed using an exact algorithm for the kinetics of channel gating and the approximate algorithm of Fox & Lu. The Fox & Lu algorithm assumes that channel gating particle dynamics have a stochastic term that is uncorrelated, zero-mean Gaussian noise, whereas the results of this study demonstrate that in many cases the stochastic term in the Fox & Lu algorithm should be correlated and non-Gaussian noise with a non-zero mean. The results indicate that: (i) the source of the inaccuracy is that the Fox & Lu algorithm does not adequately describe the combined behavior of the multiple activation particles in each sodium and potassium channel, and (ii) the accuracy does not improve with increasing numbers of channels.

Impact of device engineering on analog/RF performances of tunnel field effect transistors

NASA Astrophysics Data System (ADS)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

SU-C-210-01: Are Clinically Relevant Dosimetric Endpoints Significantly Better with Gating of Lung SBRT Vs. ITV-Based Treatment?: Results of a Large Cohort Investigation Analyzing Predictive Dosimetric Indicators as a Function of Tumor Volume and Motion Amplitude

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, J; Zhao, B; Ajlouni, M

2015-06-15

Purpose: To quantitatively compare patient internal target volume (ITV)-based plans with retrospectively generated gated plans to evaluate potential dosimetric improvements in lung toxicity from gated radiotherapy. Methods: Evaluation was conducted for 150 stereotactic body radiation therapy (SBRT) treatment plans for 128 early-stage (T1–T3, <5cm) NSCLC patients. PTV margins were: ITV+5 mm (ITV-plan) and GTV+5 mm (Gated-plan). ITV-based and gated treatment plans were compared on the same free-breathing CT. ITV-based plan constraints were used to re-optimize and recalculate new gated plans. Plans were generated for 3 fractionation regimens: 3×18Gy, 4×12Gy (original), and 5×10Gy. Physical dose was converted to equivalent dose inmore » 2Gy fractions (EQD2), which was used to determine mean lung dose (MLD) and percent volume of lung receiving ≥20Gy (V20). MLD and V20 differences between gating and ITV-based plans were analyzed as a function of both three-dimensional (3D) motion and tumor volume. The low dose region, V5, was also evaluated. Results: MLD and V20 differences between gated and ITV-based plans were larger for lower (1.48±1.32Gy and 1.44±1.29%) than for upper lobe tumors (0.89±0.74Gy and 0.92±0.71%) due to smaller tumor motion (2.9±3.4mm) compared to lower lobe tumors (8.1±6.1mm). Average differences of <1–2% were noted in V5 between ITV and gated plans. Dosimetric differences between gating and ITV-based methods increased with increasing tumor motion and decreasing tumor volume. Overall, average MLD (8.04±3.92Gy) and V20 (8.29±4.33%) values for ITV-based plans were already well below clinical guidelines, even for the 3×18Gy dose scheme, for which largest differences were noted relative to gated plans. Similar results were obtained for 5×10Gy and 4×12Gy regimens. Conclusion: Clinically relevant improvement in pulmonary toxicity, based on predictors of radiation pneumonitis (MLD and V20) was not generally observed, though improvement for tumors with 3D motion >15 mm, mainly concentrated in peripheral lower lobe tumors, may be considered clinically relevant. Work supported in part by a grant from Varian Medical systems, Palo Alto, CA.« less

Quantum circuit dynamics via path integrals: Is there a classical action for discrete-time paths?

NASA Astrophysics Data System (ADS)

Penney, Mark D.; Enshan Koh, Dax; Spekkens, Robert W.

2017-07-01

It is straightforward to compute the transition amplitudes of a quantum circuit using the sum-over-paths methodology when the gates in the circuit are balanced, where a balanced gate is one for which all non-zero transition amplitudes are of equal magnitude. Here we consider the question of whether, for such circuits, the relative phases of different discrete-time paths through the configuration space can be defined in terms of a classical action, as they are for continuous-time paths. We show how to do so for certain kinds of quantum circuits, namely, Clifford circuits where the elementary systems are continuous-variable systems or discrete systems of odd-prime dimension. These types of circuit are distinguished by having phase-space representations that serve to define their classical counterparts. For discrete systems, the phase-space coordinates are also discrete variables. We show that for each gate in the generating set, one can associate a symplectomorphism on the phase-space and to each of these one can associate a generating function, defined on two copies of the configuration space. For discrete systems, the latter association is achieved using tools from algebraic geometry. Finally, we show that if the action functional for a discrete-time path through a sequence of gates is defined using the sum of the corresponding generating functions, then it yields the correct relative phases for the path-sum expression. These results are likely to be relevant for quantizing physical theories where time is fundamentally discrete, characterizing the classical limit of discrete-time quantum dynamics, and proving complexity results for quantum circuits.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Amplifying genetic logic gates.

PubMed

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

A solid dielectric gated graphene nanosensor in electrolyte solutions.

PubMed

Zhu, Yibo; Wang, Cheng; Petrone, Nicholas; Yu, Jaeeun; Nuckolls, Colin; Hone, James; Lin, Qiao

2015-03-23

This letter presents a graphene field effect transistor (GFET) nanosensor that, with a solid gate provided by a high- κ dielectric, allows analyte detection in liquid media at low gate voltages. The gate is embedded within the sensor and thus is isolated from a sample solution, offering a high level of integration and miniaturization and eliminating errors caused by the liquid disturbance, desirable for both in vitro and in vivo applications. We demonstrate that the GFET nanosensor can be used to measure pH changes in a range of 5.3-9.3. Based on the experimental observations and quantitative analysis, the charging of an electrical double layer capacitor is found to be the major mechanism of pH sensing.

The background in a balloon-borne fluorescence-gated proportional counter

NASA Technical Reports Server (NTRS)

Ramsey, B. D.; Bower, C. R.; Dietz, K. L.; Weisskopf, M. C.

1990-01-01

The results of an analysis of the background in a fluorescence-gated proportional counter operating over the energy range 3-150 keV are presented. It is found that the dominant background component is that produced by high energy qamma-rays that penetrate the shields and undergo multiple scattering in the detector body, resulting in photoelectric absorption in the detector gas. A careful choice of materials and thickness can move the peak of this emission outside of the detector sensitive range, thereby dramatically reducing the residual background.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vedam, S.; Archambault, L.; Starkschall, G.

2007-11-15

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the deliverymore » gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation and delivery gate thresholds to within 0.3%. For patient data analysis, differences between simulation and delivery gate thresholds are reported as a fraction of the total respiratory motion range. For the smaller phase interval, the differences between simulation and delivery gate thresholds are 8{+-}11% and 14{+-}21% with and without audio-visual biofeedback, respectively, when the simulation gate threshold is determined based on the mean respiratory displacement within the 40%-60% gating phase interval. For the longer phase interval, corresponding differences are 4{+-}7% and 8{+-}15% with and without audio-visual biofeedback, respectively. Alternatively, when the simulation gate threshold is determined based on the maximum average respiratory displacement within the gating phase interval, greater differences between simulation and delivery gate thresholds are observed. A relationship between retrospective simulation gate threshold and prospective delivery gate threshold for respiratory gating is established and validated for regular and nonregular respiratory motion. Using this relationship, the delivery gate threshold can be reliably estimated at the time of 4D CT simulation, thereby improving the accuracy and efficiency of respiratory-gated radiation delivery.« less

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation.

PubMed

Vedam, S; Archambault, L; Starkschall, G; Mohan, R; Beddar, S

2007-11-01

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation and delivery gate thresholds to within 0.3%. For patient data analysis, differences between simulation and delivery gate thresholds are reported as a fraction of the total respiratory motion range. For the smaller phase interval, the differences between simulation and delivery gate thresholds are 8 +/- 11% and 14 +/- 21% with and without audio-visual biofeedback, respectively, when the simulation gate threshold is determined based on the mean respiratory displacement within the 40%-60% gating phase interval. For the longer phase interval, corresponding differences are 4 +/- 7% and 8 +/- 15% with and without audiovisual biofeedback, respectively. Alternatively, when the simulation gate threshold is determined based on the maximum average respiratory displacement within the gating phase interval, greater differences between simulation and delivery gate thresholds are observed. A relationship between retrospective simulation gate threshold and prospective delivery gate threshold for respiratory gating is established and validated for regular and nonregular respiratory motion. Using this relationship, the delivery gate threshold can be reliably estimated at the time of 4D CT simulation, thereby improving the accuracy and efficiency of respiratory-gated radiation delivery.

Mesoscopic Field-Effect-Induced Devices in Depleted Two-Dimensional Electron Systems

NASA Astrophysics Data System (ADS)

Bachsoliani, N.; Platonov, S.; Wieck, A. D.; Ludwig, S.

2017-12-01

Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs /(Al ,Ga )As heterostructure enable a large variety of applications ranging from fundamental research to high-speed transistors. Electrical circuits are thereby commonly defined by creating barriers for carriers by the selective depletion of a preexisting 2DES. We explore an alternative approach: we deplete the 2DES globally by applying a negative voltage to a global top gate and screen the electric field of the top gate only locally using nanoscale gates placed on the wafer surface between the plane of the 2DES and the top gate. Free carriers are located beneath the screen gates, and their properties can be controlled by means of geometry and applied voltages. This method promises considerable advantages for the definition of complex circuits by the electric-field effect, as it allows us to reduce the number of gates and simplify gate geometries. Examples are carrier systems with ring topology or large arrays of quantum dots. We present a first exploration of this method pursuing field effect, Hall effect, and Aharonov-Bohm measurements to study electrostatic, dynamic, and coherent properties.

Doppler optical coherence microscopy and tomography applied to inner ear mechanics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, Scott; Freeman, Dennis M.; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts

While it is clear that cochlear traveling waves underlie the extraordinary sensitivity, frequency selectivity, and dynamic range of mammalian hearing, the underlying micromechanical mechanisms remain unresolved. Recent advances in low coherence measurement techniques show promise over traditional laser Doppler vibrometry and video microscopy, which are limited by low reflectivities of cochlear structures and restricted optical access. Doppler optical coherence tomography (DOCT) and Doppler optical coherence microscopy (DOCM) both utilize a broadband source to limit constructive interference of scattered light to a small axial depth called a coherence gate. The coherence gate can be swept axially to image and measure sub-nanometermore » motions of cochlear structures throughout the cochlear partition. The coherence gate of DOCT is generally narrower than the confocal gate of the focusing optics, enabling increased axial resolution (typically 15 μm) within optical sections of the cochlear partition. DOCM, frequently implemented in the time domain, centers the coherence gate on the focal plane, achieving enhanced lateral and axial resolution when the confocal gate is narrower than the coherence gate. We compare these two complementary systems and demonstrate their utility in studying cellular and micromechanical mechanisms involved in mammalian hearing.« less

Method for distance determination using range-gated imaging suitable for an arbitrary pulse shape

NASA Astrophysics Data System (ADS)

Kabashnikov, Vitaly; Kuntsevich, Boris

2017-10-01

A method for distance determination with the help of range-gated viewing systems suitable for the arbitrary shape of the illumination pulse is proposed. The method is based on finding the delay time at which maximum of the return pulse energy takes place. The maximum position depends on the pulse and gate durations and, generally speaking, on the pulse shape. If the pulse length is less than or equal to the gate duration, the delay time appropriate to the maximum does not depend on the pulse shape. At equal pulse and gate durations, there is a strict local maximum, which turns into a plateau when pulse is shorter than gate duration. A delay time appropriate to the strict local maximum or the far boundary of the plateau (where non-strict maximum is) is directly related to the distance to the object. These findings are confirmed by analytical relationships for trapezoid pulses and numerical results for the real pulse shape. To verify the proposed method we used a vertical wall located at different distances from 15 to 120m as an observed object. Delay time was changing discretely in increments of 5 ns. Maximum of the signal was determined by visual observation of the object on the monitor screen. The distance defined by the proposed method coincided with the direct measurement with accuracy 1- 2m, which is comparable with the delay time step multiplied by half of the light velocity. The results can be useful in the development of 3-D vision systems.

An Ultrasonic Multiple-Access Ranging Core Based on Frequency Shift Keying Towards Indoor Localization

PubMed Central

Segers, Laurent; Van Bavegem, David; De Winne, Sam; Braeken, An; Touhafi, Abdellah; Steenhaut, Kris

2015-01-01

This paper describes a new approach and implementation methodology for indoor ranging based on the time difference of arrival using code division multiple access with ultrasound signals. A novel implementation based on a field programmable gate array using finite impulse response filters and an optimized correlation demodulator implementation for ultrasound orthogonal signals is developed. Orthogonal codes are modulated onto ultrasound signals using frequency shift keying with carrier frequencies of 24.5 kHz and 26 kHz. This implementation enhances the possibilities for real-time, embedded and low-power tracking of several simultaneous transmitters. Due to the high degree of parallelism offered by field programmable gate arrays, up to four transmitters can be tracked simultaneously. The implementation requires at most 30% of the available logic gates of a Spartan-6 XC6SLX45 device and is evaluated on accuracy and precision through several ranging topologies. In the first topology, the distance between one transmitter and one receiver is evaluated. Afterwards, ranging analyses are applied between two simultaneous transmitters and one receiver. Ultimately, the position of the receiver against four transmitters using trilateration is also demonstrated. Results show enhanced distance measurements with distances ranging from a few centimeters up to 17 m, while keeping a centimeter-level accuracy. PMID:26263986

Good Vibrations: Cross-Frequency Coupling in the Human Nucleus Accumbens during Reward Processing

ERIC Educational Resources Information Center

Cohen, Michael X.; Axmacher, Nikolai; Lenartz, Doris; Elger, Christian E.; Sturm, Volker; Schlaepfer, Thomas E.

2009-01-01

The nucleus accumbens is critical for reward-guided learning and decision-making. It is thought to "gate" the flow of a diverse range of information (e.g., rewarding, aversive, and novel events) from limbic afferents to basal ganglia outputs. Gating and information encoding may be achieved via cross-frequency coupling, in which bursts of…

Study on super-resolution three-dimensional range-gated imaging technology

NASA Astrophysics Data System (ADS)

Guo, Huichao; Sun, Huayan; Wang, Shuai; Fan, Youchen; Li, Yuanmiao

2018-04-01

Range-gated three dimensional imaging technology is a hotspot in recent years, because of the advantages of high spatial resolution, high range accuracy, long range, and simultaneous reflection of target reflectivity information. Based on the study of the principle of intensity-related method, this paper has carried out theoretical analysis and experimental research. The experimental system adopts the high power pulsed semiconductor laser as light source, gated ICCD as the imaging device, can realize the imaging depth and distance flexible adjustment to achieve different work mode. The imaging experiment of small imaging depth is carried out aiming at building 500m away, and 26 group images were obtained with distance step 1.5m. In this paper, the calculation method of 3D point cloud based on triangle method is analyzed, and 15m depth slice of the target 3D point cloud are obtained by using two frame images, the distance precision is better than 0.5m. The influence of signal to noise ratio, illumination uniformity and image brightness on distance accuracy are analyzed. Based on the comparison with the time-slicing method, a method for improving the linearity of point cloud is proposed.

A phasemeter concept for space applications that integrates an autonomous signal acquisition stage based on the discrete wavelet transform.

PubMed

Ales, Filippo; Mandel, Oliver; Gath, Peter; Johann, Ulrich; Braxmaier, Claus

2015-08-01

We describe a phasemeter designed to autonomously acquire and track a heterodyne signal with low signal-to-noise ratio in a frequency band that spans from 1 MHz to 25 MHz. The background driving some of the design criterions of the phasemeter comes from studies on future space mission concepts such as orbiting gravitational wave observatories and next generation geodesy missions which all rely on tracking phasemeters in order to meet their mission goal. The phasemeter has been implemented within a field programmable gate array trying to minimize the requirement of computational resources and its performance has been tested using signal generators. Laboratory test has shown that the phasemeter is capable of locking to an input signal in less than half a millisecond, while its phase measurement accuracy is in the micro-radian range for measurement frequencies that span from mHz to Hz.

A phasemeter concept for space applications that integrates an autonomous signal acquisition stage based on the discrete wavelet transform

NASA Astrophysics Data System (ADS)

Ales, Filippo; Mandel, Oliver; Gath, Peter; Johann, Ulrich; Braxmaier, Claus

2015-08-01

We describe a phasemeter designed to autonomously acquire and track a heterodyne signal with low signal-to-noise ratio in a frequency band that spans from 1 MHz to 25 MHz. The background driving some of the design criterions of the phasemeter comes from studies on future space mission concepts such as orbiting gravitational wave observatories and next generation geodesy missions which all rely on tracking phasemeters in order to meet their mission goal. The phasemeter has been implemented within a field programmable gate array trying to minimize the requirement of computational resources and its performance has been tested using signal generators. Laboratory test has shown that the phasemeter is capable of locking to an input signal in less than half a millisecond, while its phase measurement accuracy is in the micro-radian range for measurement frequencies that span from mHz to Hz.

Reducing NPR 7120.5D to Practice: Preparing for a Life-Cycle Review

NASA Technical Reports Server (NTRS)

Taylor, Randall L.

2008-01-01

In March 2007, NASA issued revised rules for space flight project management, NPR 7120.5D, 'NASA Space Flight Program and Project Management Requirements.' Central to the new rules was the construct of Key Decision Points, maturity gates that the project team must pass in order to continue development. In order that the KDP decision be fully informed, the NPR required, as entrance criteria for the gate, the generation and delivery of specified planning, technical, and cost/schedule documents (gate products) and a life-cycle review, the Preliminary Design Review. Building on JPL experience on the Prometheus and Juno projects, the team successfully organized for and conducted these reviews on an aggressive schedule. Key actions were taken to proactively interact with the SRB, produce high-quality gate products with stakeholder review, generate review presentation materials, and handle a myriad of supporting logistical functions. A review preparation team was established, including a Review Captain and leads for documentation, information systems, and logistics, and their roles, responsibilities and task assignments were identified. Aids were produced, including a detailed review preparation schedule and a comprehensive gate products production table. Institutional support was leveraged early and often. Implementation strategy reflected the needs of a nationally-distributed team, as well as applicable export control and IT security requirements. This paper gives a brief overview of the GRAIL mission and its project management challenges, provides a detailed description of project PMSR and PDR preparation and execution activities, including positive and negative lessons learned, and identifies recommendations for future NASA (and non-NASA) project teams.

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L; Geier, Michael L; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-11-05

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 10(4). This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics.

Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

PubMed Central

Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

2013-01-01

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Energy-loss return gate via liquid dielectric polarization.

PubMed

Kim, Taehun; Yong, Hyungseok; Kim, Banseok; Kim, Dongseob; Choi, Dukhyun; Park, Yong Tae; Lee, Sangmin

2018-04-12

There has been much research on renewable energy-harvesting techniques. However, owing to increasing energy demands, significant energy-related issues remain to be solved. Efforts aimed at reducing the amount of energy loss in electric/electronic systems are essential for reducing energy consumption and protecting the environment. Here, we design an energy-loss return gate system that reduces energy loss from electric/electronic systems by utilizing the polarization of liquid dielectrics. The use of a liquid dielectric material in the energy-loss return gate generates electrostatic potential energy while reducing the dielectric loss of the electric/electronic system. Hence, an energy-loss return gate can make breakthrough impacts possible by amplifying energy-harvesting efficiency, lowering the power consumption of electronics, and storing the returned energy. Our study indicates the potential for enhancing energy-harvesting technologies for electric/electronics systems, while increasing the widespread development of these systems.

Bacterial voltage-gated sodium channels (BacNaVs) from the soil, sea, and salt lakes enlighten molecular mechanisms of electrical signaling and pharmacology in the brain and heart

PubMed Central

Payandeh, Jian; Minor, Daniel L.

2014-01-01

Voltage-gated sodium channels (NaVs) provide the initial electrical signal that drives action potential generation in many excitable cells of the brain, heart, and nervous system. For more than 60 years, functional studies of NaVs have occupied a central place in physiological and biophysical investigation of the molecular basis of excitability. Recently, structural studies of members of a large family of bacterial voltage-gated sodium channels (BacNaVs) prevalent in soil, marine, and salt lake environments that bear many of the core features of eukaryotic NaVs have reframed ideas for voltage-gated channel function, ion selectivity, and pharmacology. Here, we analyze the recent advances, unanswered questions, and potential of BacNaVs as templates for drug development efforts. PMID:25158094

Wicket gate trailing-edge blowing: A method for improving off-design hydroturbine performance by adjusting the runner inlet swirl angle

NASA Astrophysics Data System (ADS)

Lewis, B. J.; Cimbala, J. M.; Wouden, A. M.

2014-03-01

At their best efficiency point (BEP), hydroturbines operate at very high efficiency. However, with the ever-increasing penetration of alternative electricity generation, it has become common to operate hydroturbines at off-design conditions in order to maintain stability in the electric power grid. This paper demonstrates a method for improving hydroturbine performance during off-design operation by injecting water through slots at the trailing edges of the wicket gates. The injected water causes a change in bulk flow direction at the inlet of the runner. This change in flow angle from the wicket gate trailing-edge jets provides the capability of independently varying the flow rate and swirl angle through the runner, which in current designs are both determined by the wicket gate opening angle. When properly tuned, altering the flow angle results in a significant improvement in turbine efficiency during off-design operation.

A quantum Fredkin gate.

PubMed

Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

2016-03-01

Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

NASA Astrophysics Data System (ADS)

Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

2018-01-01

In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

Thin membrane sensor with biochemical switch

NASA Technical Reports Server (NTRS)

Worley, III, Jennings F. (Inventor); Case, George D. (Inventor)

1994-01-01

A modular biosensor system for chemical or biological agent detection utilizes electrochemical measurement of an ion current across a gate membrane triggered by the reaction of the target agent with a recognition protein conjugated to a channel blocker. The sensor system includes a bioresponse simulator or biochemical switch module which contains the recognition protein-channel blocker conjugate, and in which the detection reactions occur, and a transducer module which contains a gate membrane and a measuring electrode, and in which the presence of agent is sensed electrically. In the poised state, ion channels in the gate membrane are blocked by the recognition protein-channel blocker conjugate. Detection reactions remove the recognition protein-channel blocker conjugate from the ion channels, thus eliciting an ion current surge in the gate membrane which subsequently triggers an output alarm. Sufficiently large currents are generated that simple direct current electronics are adequate for the measurements. The biosensor has applications for environmental, medical, and industrial use.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

ScienceCinema

Chu, Steven; Gates, Bill; Podesta, John

2018-05-14

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called Fireside Chat that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Fast Implementation of Quantum Phase Gates and Creation of Cluster States via Transitionless Quantum Driving

NASA Astrophysics Data System (ADS)

Zhang, Chun-Ling; Liu, Wen-Wu

2018-05-01

In this paper, combining transitionless quantum driving and quantum Zeno dynamics, we propose an efficient scheme to fast implement a two-qubit quantum phase gate which can be used to generate cluster state of atoms trapped in distant cavities. The influence of various of various error sources including spontaneous emission and photon loss on the fidelity is analyzed via numerical simulation. The results show that this scheme not only takes less time than adiabatic scheme but also is not sensitive to both error sources. Additionally, a creation of N-atom cluster states is put forward as a typical example of the applications of the phase gates.

Gating heat transport by manipulating convection in a magnetic nanofluid

NASA Astrophysics Data System (ADS)

Seshadri, Indira; Gardner, Alex; Mehta, Rutvik J.; Swartwout, Richard; Keblinski, Pawel; Borca-Tasciuc, Theo; Ramanath, Ganpati

2013-05-01

Gating thermal transport is a key requirement in smart heat exchangers used in a variety of applications such as electronics and energy generation. Here, we demonstrate a high on-off ratio thermal valve using magnetic nanofluids actuated by a non-uniform magnetic field. Using nanofluids comprised of magnetic nanoparticles in paraffin oil, we obtain on-off ratios as high as 16, which is more than 5-fold higher than that seen in comparable nanofluids with uniform magnetic fields. Analysis of these results using heat transfer modeling shows that the remarkable enhancement arises from magneto-thermally activated convection due to field gradients. Such convective thermal gating could be promising for applications.

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

NASA Technical Reports Server (NTRS)

Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

1993-01-01

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Enhanced ν-optical time domain reflectometry using gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector

NASA Astrophysics Data System (ADS)

Zhang, Xuping; Shi, Yuanlei; Shan, Yuanyuan; Sun, Zhenhong; Qiao, Weiyan; Zhang, Yixin

2016-09-01

Optical time domain reflectometry (OTDR) is one of the most successful diagnostic tools for nondestructive attenuation measurement of a fiber link. To achieve better sensitivity, spatial resolution, and avoid dead-zone in conversional OTDR, a single-photon detector has been introduced to form the photon-counting OTDR (ν-OTDR). We have proposed a ν-OTDR system using a gigahertz sinusoidally gated InGaAs/InP single-photon avalanche detector (SPAD). Benefiting from the superior performance of a sinusoidal gated SPAD on dark count probability, gating frequency, and gate duration, our ν-OTDR system has achieved a dynamic range (DR) of 33.4 dB with 1 μs probe pulse width after an equivalent measurement time of 51 s. This obtainable DR corresponds to a sensing length over 150 km. Our system has also obtained a spatial resolution of 5 cm at the end of a 5-km standard single-mode fiber. By employing a sinusoidal gating technique, we have improved the ν-OTDR spatial resolution and significantly reduced the measurement time.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

NASA Astrophysics Data System (ADS)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

SU-F-J-151: Evaluation of a Magnetic Resonance Image Gated Radiotherapy System Using a Motion Phantom and Radiochromic Film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamb, J; Ginn, J; O’Connell, D

Purpose: Magnetic resonance image (MRI) guided radiotherapy enables gating directly on target position for soft-tissue targets in the lung and abdomen. We present a dosimetric evaluation of a commercially-available FDA-approved MRI-guided radiotherapy system’s gating performance using a MRI-compatible respiratory motion phantom and radiochromic film. Methods: The MRI-compatible phantom was capable of one-dimensional motion. The phantom consisted of a target rod containing high-contrast target inserts which moved inside a body structure containing background contrast material. The target rod was equipped with a radiochromic film insert. Treatment plans were generated for a 3 cm diameter spherical target, and delivered to the phantommore » at rest and in motion with and without gating. Both sinusoidal and actual tumor trajectories (two free-breathing trajectories and one repeated-breath hold) were used. Gamma comparison at 5%/3mm was used to measure fidelity to the static target dose distribution. Results: Without gating, gamma pass rates were 24–47% depending on motion trajectory. Using our clinical standard of repeated breath holds and a gating window of 3 mm with 10% of the target allowed outside the gating boundary, the gamma pass rate was 99.6%. Relaxing the gating window to 5 mm resulted in gamma pass rate of 98.6% with repeated breath holds. For all motion trajectories gated with 3 mm margin and 10% allowed out, gamma pass rates were between 64–100% (mean:87.5%). For a 5 mm margin and 10% allowed out, gamma pass rates were between 57–98% (mean: 82.49%), significantly lower than for 3 mm by paired t-test (p=0.01). Conclusion: We validated the performance of respiratory gating based on real-time cine MRI images with the only FDA-approved MRI-guided radiotherapy system. Our results suggest that repeated breath hold gating should be used when possible for best accuracy. A 3 mm gating margin is statistically significantly more accurate than a 5 mm gating margin.« less

Pseudo-diode based on protonic/electronic hybrid oxide transistor

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Phase-matching of attosecond XUV supercontinuum

NASA Astrophysics Data System (ADS)

Gilbertson, Steve; Mashiko, Hiroki; Li, Chengquan; Khan, Sabih; Shakya, Mahendra; Moon, Eric; Chang, Zenghu

2008-05-01

Adding a weak second harmonic field to an ellipticity dependent polarization gating field allowed for the production of XUV supercontinua from longer (˜10 fs) input pulses in argon. The spectra support 200 as single isolated pulses. This technique, dubbed double optical gating (DOG), demonstrated a large enhancement of the harmonic yield as compared with polarization gating. These results can be attributed to the reduced depletion of the ground state of the target from the leading edge of the pulse and the increased intensity inside the polarization gate width. Through optimization of the harmonic generation process under the phase matching conditions, we were able to further increase the harmonic flux. The parameters included the target gas pressure, laser focus position, input pulse duration, and polarization gate width. By varying the CE phase of the pulse, we were able to verify that the results were indeed from DOG due to its unique 2 pi dependence on the harmonic spectrum. We were able to extend our results to neon. Its higher ionization potential allowed an extension of the harmonic cutoff for the production of even shorter pulses.

Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

NASA Astrophysics Data System (ADS)

Michele, Simone; Sammarco, Paolo; d'Errico, Michele

2016-08-01

We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

Near-IR squaraine dye–loaded gated periodic mesoporous organosilica for photo-oxidation of phenol in a continuous-flow device

PubMed Central

Borah, Parijat; Sreejith, Sivaramapanicker; Anees, Palapuravan; Menon, Nishanth Venugopal; Kang, Yuejun; Ajayaghosh, Ayyappanpillai; Zhao, Yanli

2015-01-01

Periodic mesoporous organosilica (PMO) has been widely used for the fabrication of a variety of catalytically active materials. We report the preparation of novel photo-responsive PMO with azobenzene-gated pores. Upon activation, the azobenzene gate undergoes trans-cis isomerization, which allows an unsymmetrical near-infrared squaraine dye (Sq) to enter into the pores. The gate closure by cis-trans isomerization of the azobenzene unit leads to the safe loading of the monomeric dye inside the pores. The dye-loaded and azobenzene-gated PMO (Sq-azo@PMO) exhibits excellent generation of reactive oxygen species upon excitation at 664 nm, which can be effectively used for the oxidation of phenol into benzoquinone in aqueous solution. Furthermore, Sq-azo@PMO as the catalyst was placed inside a custom-built, continuous-flow device to carry out the photo-oxidation of phenol to benzoquinone in the presence of 664-nm light. By using the device, about 23% production of benzoquinone with 100% selectivity was achieved. The current research presents a prototype of transforming heterogeneous catalysts toward practical use. PMID:26601266

One-step resonant controlled-phase gate on distant transmon qutrits in different 1D superconducting resonators

PubMed Central

Hua, Ming; Tao, Ming-Jie; Deng, Fu-Guo; Lu Long, Gui

2015-01-01

We propose a scheme to construct the controlled-phase (c-phase) gate on distant transmon qutrits hosted in different resonators inter-coupled by a connected transmon qutrit. Different from previous works for entanglement generation and information transfer on two distant qubits in a dispersive regime in the similar systems, our gate is constructed in the resonant regime with one step. The numerical simulation shows that the fidelity of our c-phase gate is 99.5% within 86.3 ns. As an interesting application of our c-phase gate, we propose an effective scheme to complete a conventional square lattice of two-dimensional surface code layout for fault-tolerant quantum computing on the distant transmon qutrits. The four-step coupling between the nearest distant transmon qutrits, small coupling strengths of the distant transmon qutrits, and the non-population on the connection transmon qutrit can reduce the interactions among different parts of the layout effectively, which makes the layout be integrated with a large scale in an easier way. PMID:26486426

Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

NASA Astrophysics Data System (ADS)

Alivov, Yahya; Funke, Hans; Nagpal, Prashant

2015-07-01

Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers

NASA Astrophysics Data System (ADS)

Deninger, Anselm J.; Roggenbuck, A.; Schindler, S.; Preu, S.

2015-03-01

To date, exploiting the full bandwidth of state-of-the-art InGaAs photomixers for generation and detection of continuous-wave (CW) THz radiation (typ. ~50 GHz to ~3 THz) required complex and costly external-cavity diode lasers with motorized resonator control. Distributed feedback (DFB) lasers, by contrast, are compact and inexpensive, but the tuning range per diode is limited to ~600 GHz at 1.5 μm. In this paper, we show that a combination of three DFB diodes covers the complete frequency range from 0 - 2750 GHz without any gaps. In combination with InGaAs-based photomixers for terahertz generation and detection, the system achieves a dynamic range of > 100 dB at 56 GHz, 64 dB at 1000 GHz, and 26 dB at 2500 GHz. A field-programmable gate array (FPGA)-based lock-in amplifier permits a flexible adjustment of the integration time from 0.5 ms to 600 ms. Employing an optimized "fast scan" mode, a spectrum of ~1200 GHz - the bandwidth of each subset of two lasers - and 40 MHz steps is acquired in less than one minute, still maintaining a reasonable dynamic range. To the best of our knowledge, the bandwidth of 2.75 THz presents a new record for DFB-based CW-terahertz systems.

Range-Gated Metrology: An Ultra-Compact Sensor for Dimensional Stabilization

NASA Technical Reports Server (NTRS)

Lay, Oliver P.; Dubovitsky, Serge; Shaddock, Daniel A.; Ware, Brent; Woodruff, Christopher S.

2008-01-01

Point-to-point laser metrology systems can be used to stabilize large structures at the nanometer levels required for precision optical systems. Existing sensors are large and intrusive, however, with optical heads that consist of several optical elements and require multiple optical fiber connections. The use of point-to-point laser metrology has therefore been limited to applications where only a few gauges are needed and there is sufficient space to accommodate them. Range-Gated Metrology is a signal processing technique that preserves nanometer-level or better performance while enabling: (1) a greatly simplified optical head - a single fiber optic collimator - that can be made very compact, and (2) a single optical fiber connection that is readily multiplexed. This combination of features means that it will be straightforward and cost-effective to embed tens or hundreds of compact metrology gauges to stabilize a large structure. In this paper we describe the concept behind Range-Gated Metrology, demonstrate the performance in a laboratory environment, and give examples of how such a sensor system might be deployed.

Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators

PubMed

Dimitrakopoulos; Purushothaman; Kymissis; Callegari; Shaw

1999-02-05

The gate bias dependence of the field-effect mobility in pentacene-based insulated gate field-effect transistors (IGFETs) was interpreted on the basis of the interaction of charge carriers with localized trap levels in the band gap. This understanding was used to design and fabricate IGFETs with mobility of more than 0.3 square centimeter per volt per second and current modulation of 10(5), with the use of amorphous metal oxide gate insulators. These values were obtained at operating voltage ranges as low as 5 volts, which are much smaller than previously reported results. An all-room-temperature fabrication process sequence was used, which enabled the demonstration of high-performance organic IGFETs on transparent plastic substrates, at low operating voltages for organic devices.

Dual respiratory and cardiac motion estimation in PET imaging: Methods design and quantitative evaluation.

PubMed

Feng, Tao; Wang, Jizhe; Tsui, Benjamin M W

2018-04-01

The goal of this study was to develop and evaluate four post-reconstruction respiratory and cardiac (R&C) motion vector field (MVF) estimation methods for cardiac 4D PET data. In Method 1, the dual R&C motions were estimated directly from the dual R&C gated images. In Method 2, respiratory motion (RM) and cardiac motion (CM) were separately estimated from the respiratory gated only and cardiac gated only images. The effects of RM on CM estimation were modeled in Method 3 by applying an image-based RM correction on the cardiac gated images before CM estimation, the effects of CM on RM estimation were neglected. Method 4 iteratively models the mutual effects of RM and CM during dual R&C motion estimations. Realistic simulation data were generated for quantitative evaluation of four methods. Almost noise-free PET projection data were generated from the 4D XCAT phantom with realistic R&C MVF using Monte Carlo simulation. Poisson noise was added to the scaled projection data to generate additional datasets of two more different noise levels. All the projection data were reconstructed using a 4D image reconstruction method to obtain dual R&C gated images. The four dual R&C MVF estimation methods were applied to the dual R&C gated images and the accuracy of motion estimation was quantitatively evaluated using the root mean square error (RMSE) of the estimated MVFs. Results show that among the four estimation methods, Methods 2 performed the worst for noise-free case while Method 1 performed the worst for noisy cases in terms of quantitative accuracy of the estimated MVF. Methods 4 and 3 showed comparable results and achieved RMSE lower by up to 35% than that in Method 1 for noisy cases. In conclusion, we have developed and evaluated 4 different post-reconstruction R&C MVF estimation methods for use in 4D PET imaging. Comparison of the performance of four methods on simulated data indicates separate R&C estimation with modeling of RM before CM estimation (Method 3) to be the best option for accurate estimation of dual R&C motion in clinical situation. © 2018 American Association of Physicists in Medicine.

Control of Vertebrate Respiration and Locomotion: A Brief Account.

ERIC Educational Resources Information Center

Feldman, Jack L.; Grillner, Sten

1983-01-01

Areas considered in this discussion include: activation/modulation of movement; control of motoneuronal discharge by excitation/inhibition; neural generation of movement synergies (considering interaction of central/peripheral elements, phasic gating of reflex effects, and neuronal organization of central pattern generators); protean nature of…

Measurement-based quantum communication with resource states generated by entanglement purification

NASA Astrophysics Data System (ADS)

Wallnöfer, J.; Dür, W.

2017-01-01

We investigate measurement-based quantum communication with noisy resource states that are generated by entanglement purification. We consider the transmission of encoded information via noisy quantum channels using a measurement-based implementation of encoding, error correction, and decoding. We show that such an approach offers advantages over direct transmission, gate-based error correction, and measurement-based schemes with direct generation of resource states. We analyze the noise structure of resource states generated by entanglement purification and show that a local error model, i.e., noise acting independently on all qubits of the resource state, is a good approximation in general, and provides an exact description for Greenberger-Horne-Zeilinger states. The latter are resources for a measurement-based implementation of error-correction codes for bit-flip or phase-flip errors. This provides an approach to link the recently found very high thresholds for fault-tolerant measurement-based quantum information processing based on local error models for resource states with error thresholds for gate-based computational models.

Generating coherent broadband continuum soft-x-ray radiation by attosecond ionization gating.

PubMed

Pfeifer, Thomas; Jullien, Aurélie; Abel, Mark J; Nagel, Phillip M; Gallmann, Lukas; Neumark, Daniel M; Leone, Stephen R

2007-12-10

The current paradigm of isolated attosecond pulse production requires a few-cycle pulse as the driver for high-harmonic generation that has a cosine-like electric field stabilized with respect to the peak of the pulse envelope. Here, we present simulations and experimental evidence that the production of high-harmonic light can be restricted to one or a few cycles on the leading edge of a laser pulse by a gating mechanism that employs time-dependent ionization of the conversion medium. This scheme enables the generation of broadband and tunable attosecond pulses. Instead of fixing the carrier-envelope phase to produce a cosine driver pulse, the phase becomes a control parameter for the center frequency of the attosecond pulse. A method to assess the multiplicity of attosecond pulses in the pulse train is also presented. The results of our study suggest an avenue towards relaxing the requirement of few-cycle pulses for isolated attosecond pulse generation.

Review on short-wavelength infrared laser gated-viewing at Fraunhofer IOSB

NASA Astrophysics Data System (ADS)

Göhler, Benjamin; Lutzmann, Peter

2017-03-01

This paper reviews the work that has been done at Fraunhofer IOSB (and its predecessor institutes) in the past ten years in the area of laser gated-viewing (GV) in the short-wavelength infrared (SWIR) band. Experimental system demonstrators in various configurations have been built up to show the potential for different applications and to investigate specific topics. The wavelength of the pulsed illumination laser is 1.57 μm and lies in the invisible, retina-safe region allowing much higher pulse energies than for wavelengths in the visible or near-infrared band concerning eye safety. All systems built up, consist of gated Intevac LIVAR® cameras based on EBCCD/EBCMOS detectors sensitive in the SWIR band. This review comprises military and civilian applications in maritime and land domain-in particular vision enhancement in bad visibility, long-range applications, silhouette imaging, 3-D imaging by sliding gates and slope method, bistatic GV imaging, and looking through windows. In addition, theoretical studies that were conducted-e.g., estimating 3-D accuracy or modeling range performance-are presented. Finally, an outlook for future work in the area of SWIR laser GV at Fraunhofer IOSB is given.

A Bayesian-Based EDA Tool for Nano-circuits Reliability Calculations

NASA Astrophysics Data System (ADS)

Ibrahim, Walid; Beiu, Valeriu

As the sizes of (nano-)devices are aggressively scaled deep into the nanometer range, the design and manufacturing of future (nano-)circuits will become extremely complex and inevitably will introduce more defects while their functioning will be adversely affected by transient faults. Therefore, accurately calculating the reliability of future designs will become a very important aspect for (nano-)circuit designers as they investigate several design alternatives to optimize the trade-offs between the conflicting metrics of area-power-energy-delay versus reliability. This paper introduces a novel generic technique for the accurate calculation of the reliability of future nano-circuits. Our aim is to provide both educational and research institutions (as well as the semiconductor industry at a later stage) with an accurate and easy to use tool for closely comparing the reliability of different design alternatives, and for being able to easily select the design that best fits a set of given (design) constraints. Moreover, the reliability model generated by the tool should empower designers with the unique opportunity of understanding the influence individual gates play on the design’s overall reliability, and identifying those (few) gates which impact the design’s reliability most significantly.

Development and Characterization of a High-Energy Neutron Time-of-Flight Imaging System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madden, Amanda Christine; Schirato, Richard C.; Swift, Alicia L.

We present that Los Alamos National Laboratory has developed a prototype of a high-energy neutron time-of-flight imaging system for the non-destructive evaluation of dense, massive, and/or high atomic number objects. High-energy neutrons provide the penetrating power, and thus the high dynamic range necessary to image internal features and defects of such objects. The addition of the time gating capability allows for scatter rejection when paired with a pulsed monoenergetic beam, or neutron energy selection when paired with a pulsed broad-spectrum neutron source. The Time Gating to Reject Scatter and Select Energy (TiGReSSE) system was tested at the Los Alamos Neutronmore » Science Center’s (LANSCE) Weapons Nuclear Research (WNR) facility, a spallation neutron source, to provide proof of concept measurements and to characterize the instrument response. This paper will show results of several objects imaged during this run cycle. In addition, results from system performance metrics such as the Modulation Transfer Function and the Detective Quantum Efficiency measured as a function of neutron energy, characterize the current system performance and inform the next generation of neutron imaging instrument.« less

Development and Characterization of a High-Energy Neutron Time-of-Flight Imaging System

DOE PAGES

Madden, Amanda Christine; Schirato, Richard C.; Swift, Alicia L.; ...

2017-02-09

We present that Los Alamos National Laboratory has developed a prototype of a high-energy neutron time-of-flight imaging system for the non-destructive evaluation of dense, massive, and/or high atomic number objects. High-energy neutrons provide the penetrating power, and thus the high dynamic range necessary to image internal features and defects of such objects. The addition of the time gating capability allows for scatter rejection when paired with a pulsed monoenergetic beam, or neutron energy selection when paired with a pulsed broad-spectrum neutron source. The Time Gating to Reject Scatter and Select Energy (TiGReSSE) system was tested at the Los Alamos Neutronmore » Science Center’s (LANSCE) Weapons Nuclear Research (WNR) facility, a spallation neutron source, to provide proof of concept measurements and to characterize the instrument response. This paper will show results of several objects imaged during this run cycle. In addition, results from system performance metrics such as the Modulation Transfer Function and the Detective Quantum Efficiency measured as a function of neutron energy, characterize the current system performance and inform the next generation of neutron imaging instrument.« less

Signal propagation and logic gating in networks of integrate-and-fire neurons.

PubMed

Vogels, Tim P; Abbott, L F

2005-11-16

Transmission of signals within the brain is essential for cognitive function, but it is not clear how neural circuits support reliable and accurate signal propagation over a sufficiently large dynamic range. Two modes of propagation have been studied: synfire chains, in which synchronous activity travels through feedforward layers of a neuronal network, and the propagation of fluctuations in firing rate across these layers. In both cases, a sufficient amount of noise, which was added to previous models from an external source, had to be included to support stable propagation. Sparse, randomly connected networks of spiking model neurons can generate chaotic patterns of activity. We investigate whether this activity, which is a more realistic noise source, is sufficient to allow for signal transmission. We find that, for rate-coded signals but not for synfire chains, such networks support robust and accurate signal reproduction through up to six layers if appropriate adjustments are made in synaptic strengths. We investigate the factors affecting transmission and show that multiple signals can propagate simultaneously along different pathways. Using this feature, we show how different types of logic gates can arise within the architecture of the random network through the strengthening of specific synapses.

Spectroscopic Studies of Laser Produced Plasma Metasurfaces

NASA Astrophysics Data System (ADS)

Colon Quinones, Roberto; Underwood, Thomas; Cappelli, Mark

2016-10-01

In this presentation, we describe the spatial and temporal plasma characteristics of the dense plasma kernels that are used to construct a laser produced plasma metasurface (PM) that is intended to serve as a tunable THz reflector. The PM is an n x n array of plasmas generated by focusing the light from a 2 J/p Q-switched Nd:YAG laser through a multi-lens array (MLA) and into a gas of varying pressure. A gated CCD camera coupled to a high-resolution spectrometer is used to obtain chord-averaged H α broadening data for the cross section of a single plasma element at the lens focal point. The data is then Abel inverted to derive the radial plasma density distribution. Measurements are repeated for a range of pressures, laser energies, and lens f-number, with a time resolution of 100 ns and a gate width of 20 ns. Results are presented for the variation of plasma density and size over these different conditions. Work supported by the Air Force Office of Scientific Research (AFOSR). R. Colon Quinones and T. Underwood acknowledge the support of the Department of Defense (DoD) through the National Defense Science & Engineering Graduate Fellowship (NDSEG) Program.

Cryo-EM Structure of the Mechanotransduction Channel NOMPC

PubMed Central

Jin, Peng; Bulkley, David; Guo, Yanmeng; Zhang, Wei; Guo, Zhenhao; Huynh, Walter; Wu, Shenping; Meltzer, Shan; Cheng, Tong; Jan, Lily Yeh; Jan, Yuh-Nung; Cheng, Yifan

2017-01-01

Mechanosensory transduction for senses such as proprioception, touch, balance, acceleration, hearing and pain relies on mechanotransduction channels, which convert mechanical stimuli into electrical signals in specialized sensory cells1. How force gates mechanotransduction channels is a central question in the field, for which there are two major models. One is the membrane-tension model: force applied to the membrane generates a change in membrane tension that is sufficient to gate the channel, as in the case of bacterial MscL channel and certain eukaryotic potassium channels2-5. The other is the tether model: force is transmitted via a tether to gate the channel. Recent study suggests that NOMPC, a mechanotransduction channel that mediates hearing and touch sensation in Drosophila, is gated by tethering of its ankyrin repeat (AR) domain to microtubules of the cytoskeleton6. Thus, a goal of studying NOMPC is to reveal the underlying mechanism of force induced gating, which could serve as a paradigm of the tether model. NOMPC, a Transient Receptor Potential (TRP) channel and the founding member of the TRPN sub-family7, fulfills all the criteria for a bona fide mechanotransduction channel1,8, and is important for a variety of mechanosensation-related behaviors such as locomotion, touch and sound sensation across different species including C. elegans9, Drosophila8,10-11 and zebrafish12. NOMPC has 29 ARs, the largest number among TRP channels. They are implicated as tether to convey force from cytoskeleton to the channel, thus to mediate mechanosensation6,13-15. A key question is how the long AR domain is organized as a tether that can trigger channel gating. Here we present a de novo atomic structure of NOMPC determined by single particle electron cryo-microscopy (cryo-EM), and discuss how its architecture could provide a means to convey mechanical force to generating an electrical signal within a cell. PMID:28658211

Directly driven source of multi-gigahertz, sub-picosecond optical pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Messerly, Michael J.; Dawson, Jay W.; Barty, Christopher P.J.

2015-10-20

A robust, compact optical pulse train source is described, with the capability of generating sub-picosecond micro-pulse sequences, which can be periodic as well as non-periodic, and at repetition rates tunable over decades of baseline frequencies, from MHz to multi-GHz regimes. The micro-pulses can be precisely controlled and formatted to be in the range of many ps in duration to as short as several fs in duration. The system output can be comprised of a continuous wave train of optical micro-pulses or can be programmed to provide gated bursts of macro-pulses, with each macro-pulse consisting of a specific number of micro-pulsesmore » or a single pulse picked from the higher frequency train at a repetition rate lower than the baseline frequency. These pulses could then be amplified in energy anywhere from the nJ to MJ range.« less

Data-driven gating in PET: Influence of respiratory signal noise on motion resolution.

PubMed

Büther, Florian; Ernst, Iris; Frohwein, Lynn Johann; Pouw, Joost; Schäfers, Klaus Peter; Stegger, Lars

2018-05-21

Data-driven gating (DDG) approaches for positron emission tomography (PET) are interesting alternatives to conventional hardware-based gating methods. In DDG, the measured PET data themselves are utilized to calculate a respiratory signal, that is, subsequently used for gating purposes. The success of gating is then highly dependent on the statistical quality of the PET data. In this study, we investigate how this quality determines signal noise and thus motion resolution in clinical PET scans using a center-of-mass-based (COM) DDG approach, specifically with regard to motion management of target structures in future radiotherapy planning applications. PET list mode datasets acquired in one bed position of 19 different radiotherapy patients undergoing pretreatment [ 18 F]FDG PET/CT or [ 18 F]FDG PET/MRI were included into this retrospective study. All scans were performed over a region with organs (myocardium, kidneys) or tumor lesions of high tracer uptake and under free breathing. Aside from the original list mode data, datasets with progressively decreasing PET statistics were generated. From these, COM DDG signals were derived for subsequent amplitude-based gating of the original list mode file. The apparent respiratory shift d from end-expiration to end-inspiration was determined from the gated images and expressed as a function of signal-to-noise ratio SNR of the determined gating signals. This relation was tested against additional 25 [ 18 F]FDG PET/MRI list mode datasets where high-precision MR navigator-like respiratory signals were available as reference signal for respiratory gating of PET data, and data from a dedicated thorax phantom scan. All original 19 high-quality list mode datasets demonstrated the same behavior in terms of motion resolution when reducing the amount of list mode events for DDG signal generation. Ratios and directions of respiratory shifts between end-respiratory gates and the respective nongated image were constant over all statistic levels. Motion resolution d/d max could be modeled as d/dmax=1-e-1.52(SNR-1)0.52, with d max as the actual respiratory shift. Determining d max from d and SNR in the 25 test datasets and the phantom scan demonstrated no significant differences to the MR navigator-derived shift values and the predefined shift, respectively. The SNR can serve as a general metric to assess the success of COM-based DDG, even in different scanners and patients. The derived formula for motion resolution can be used to estimate the actual motion extent reasonably well in cases of limited PET raw data statistics. This may be of interest for individualized radiotherapy treatment planning procedures of target structures subjected to respiratory motion. © 2018 American Association of Physicists in Medicine.

Your Co-author Received 150 Citations: Pride, but Not Envy, Mediates the Effect of System-Generated Achievement Messages on Motivation.

PubMed

Utz, Sonja; Muscanell, Nicole L

2018-01-01

ResearchGate, a social network site for academics, prominently displays the achievements of people one follows ("With 150 new reads, X was the most read author from their institute"). The goal of this paper was to examine the emotional and motivational effects of these system-generated messages, thereby extending prior research on envy-evoking status updates on Facebook to a professional context. We also extend the research on social comparisons and more broadly, on emotional responses elicited by social media. Specifically, social media research has largely focused on examining emotional reactions to content that is both generated by and is about others. In this research we directly examine updates generated by the system (ResearchGate) while also directly comparing reactions to updates about others' achievements with reactions to updates that are about the self-i.e., one's personal achievements which are also displayed on ResearchGate ("With 150 new reads, you were the most read author from your institute"). Particular attention was paid to the mediating role of envy and pride. The results of our quasi-experimental field study ( n = 419) showed that the achievements of others elicited envy, whereas personal achievements elicited pride. People exposed to their personal achievements (vs. the achievement of others) showed a higher motivation to work harder. This effect was mediated by pride, but not envy. The theoretical and practical implications of these findings are discussed.

Your Co-author Received 150 Citations: Pride, but Not Envy, Mediates the Effect of System-Generated Achievement Messages on Motivation

PubMed Central

Utz, Sonja; Muscanell, Nicole L.

2018-01-01

ResearchGate, a social network site for academics, prominently displays the achievements of people one follows (“With 150 new reads, X was the most read author from their institute”). The goal of this paper was to examine the emotional and motivational effects of these system-generated messages, thereby extending prior research on envy-evoking status updates on Facebook to a professional context. We also extend the research on social comparisons and more broadly, on emotional responses elicited by social media. Specifically, social media research has largely focused on examining emotional reactions to content that is both generated by and is about others. In this research we directly examine updates generated by the system (ResearchGate) while also directly comparing reactions to updates about others’ achievements with reactions to updates that are about the self—i.e., one’s personal achievements which are also displayed on ResearchGate (“With 150 new reads, you were the most read author from your institute”). Particular attention was paid to the mediating role of envy and pride. The results of our quasi-experimental field study (n = 419) showed that the achievements of others elicited envy, whereas personal achievements elicited pride. People exposed to their personal achievements (vs. the achievement of others) showed a higher motivation to work harder. This effect was mediated by pride, but not envy. The theoretical and practical implications of these findings are discussed. PMID:29780339

Interpreting Results from the Standardized UXO Test Sites

DTIC Science & Technology

2007-01-01

Detector Focusing Lens Cs Cell Split Polarizer Filter Collimating Lens Cs Lamp RF Coil Tiffany Mount H1 Coil Light rays Figure II-1. G-858 Cesium...conductive earth typically decay at a more rapid rate than the currents in metallic objects. Measurements are made in discrete “time gates,” or...time intervals, following the turnoff of the current pulse generated by the transmitter. The early time gates will detect both small and large metallic

Development of a High-Fidelity Simulation Environment for Shadow-Mode Assessments of Air Traffic Concepts

NASA Technical Reports Server (NTRS)

Lee, Alan G.; Robinson, John E.; Lai, Chok Fung

2017-01-01

This paper will describe the purpose, architecture, and implementation of a gate-to-gate, high-fidelity air traffic simulation environment called the Shadow Mode Assessment using Realistic Technologies for the National Airspace System (SMART-NAS) Test Bed.The overarching purpose of the SMART-NAS Test Bed (SNTB) is to conduct high-fidelity, real-time, human-in-the-loop and automation-in-the-loop simulations of current and proposed future air traffic concepts for the Next Generation Air Transportation System of the United States, called NextGen. SNTB is intended to enable simulations that are currently impractical or impossible for three major areas of NextGen research and development: Concepts across multiple operational domains such as the gate-to-gate trajectory-based operations concept; Concepts related to revolutionary operations such as the seamless and widespread integration of large and small Unmanned Aerial System (UAS) vehicles throughout U.S. airspace; Real-time system-wide safety assurance technologies to allow safe, increasingly autonomous aviation operations. SNTB is primarily accessed through a web browser. A set of secure support services are provided to simplify all aspects of real-time, human-in-the-loop and automation-in-the-loop simulations from design (i.e., prior to execution) through analysis (i.e., after execution). These services include simulation architecture and asset configuration; scenario generation; command, control and monitoring; and analysis support.

Nanoelectronics and Plasma Processing---The Next 15 Years and Beyond

NASA Astrophysics Data System (ADS)

Lieberman, Michael A.

2006-10-01

The number of transistors per chip has doubled every 2 years since 1959, and this doubling will continue over the next 15 years as transistor sizes shrink. There has been a 25 million-fold decrease in cost for the same performance, and in 15 years a desktop computer will be hundreds of times more powerful than one today. Transistors now have 37 nm (120 atoms) gate lengths and 1.5 nm (5 atoms) gate oxide thicknesses. The smallest working transistor has a 5 nm (17 atoms) gate length, close to the limiting gate length, from simulations, of about 4 nm. Plasma discharges are used to fabricate hundreds of billions of these nano-size transistors on a silicon wafer. These discharges have evolved from a first generation of ``low density'' reactors capacitively driven by a single source, to a second generation of ``high density'' reactors (inductive and electron cyclotron resonance) having two rf power sources, in order to control independently the ion flux and ion bombarding energy to the substrate. A third generation of ``moderate density'' reactors, driven capacitively by one high and one low frequency rf source, is now widely used. Recently, triple frequency and combined dc/dual frequency discharges have been investigated, to further control processing characteristics, such as ion energy distributions, uniformity, and plasma etch selectivities. There are many interesting physics issues associated with these discharges, including stochastic heating of discharge electrons by dual frequency sheaths, nonlinear frequency interactions, powers supplied by the multi-frequency sources, and electromagnetic effects such as standing waves and skin effects. Beyond the 4 nm transistor limit lies a decade of further performance improvements for conventional nanoelectronics, and beyond that, a dimly-seen future of spintronics, single-electron transistors, cross-bar latches, and molecular electronics.

Highly sensitive glucose sensors based on enzyme-modified whole-graphene solution-gated transistors

NASA Astrophysics Data System (ADS)

Zhang, Meng; Liao, Caizhi; Mak, Chun Hin; You, Peng; Mak, Chee Leung; Yan, Feng

2015-02-01

Noninvasive glucose detections are convenient techniques for the diagnosis of diabetes mellitus, which require high performance glucose sensors. However, conventional electrochemical glucose sensors are not sensitive enough for these applications. Here, highly sensitive glucose sensors are successfully realized based on whole-graphene solution-gated transistors with the graphene gate electrodes modified with an enzyme glucose oxidase. The sensitivity of the devices is dramatically improved by co-modifying the graphene gates with Pt nanoparticles due to the enhanced electrocatalytic activity of the electrodes. The sensing mechanism is attributed to the reaction of H2O2 generated by the oxidation of glucose near the gate. The optimized glucose sensors show the detection limits down to 0.5 μM and good selectivity, which are sensitive enough for non-invasive glucose detections in body fluids. The devices show the transconductances two orders of magnitude higher than that of a conventional silicon field effect transistor, which is the main reason for their high sensitivity. Moreover, the devices can be conveniently fabricated with low cost. Therefore, the whole-graphene solution-gated transistors are a high-performance sensing platform for not only glucose detections but also many other types of biosensors that may find practical applications in the near future.

Dynamic Feed Control For Injection Molding

DOEpatents

Kazmer, David O.

1996-09-17

The invention provides methods and apparatus in which mold material flows through a gate into a mold cavity that defines the shape of a desired part. An adjustable valve is provided that is operable to change dynamically the effective size of the gate to control the flow of mold material through the gate. The valve is adjustable while the mold material is flowing through the gate into the mold cavity. A sensor is provided for sensing a process condition while the part is being molded. During molding, the valve is adjusted based at least in part on information from the sensor. In the preferred embodiment, the adjustable valve is controlled by a digital computer, which includes circuitry for acquiring data from the sensor, processing circuitry for computing a desired position of the valve based on the data from the sensor and a control data file containing target process conditions, and control circuitry for generating signals to control a valve driver to adjust the position of the valve. More complex embodiments include a plurality of gates, sensors, and controllable valves. Each valve is individually controllable so that process conditions corresponding to each gate can be adjusted independently. This allows for great flexibility in the control of injection molding to produce complex, high-quality parts.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Highly sensitive glucose sensors based on enzyme-modified whole-graphene solution-gated transistors

PubMed Central

Zhang, Meng; Liao, Caizhi; Mak, Chun Hin; You, Peng; Mak, Chee Leung; Yan, Feng

2015-01-01

Noninvasive glucose detections are convenient techniques for the diagnosis of diabetes mellitus, which require high performance glucose sensors. However, conventional electrochemical glucose sensors are not sensitive enough for these applications. Here, highly sensitive glucose sensors are successfully realized based on whole-graphene solution-gated transistors with the graphene gate electrodes modified with an enzyme glucose oxidase. The sensitivity of the devices is dramatically improved by co-modifying the graphene gates with Pt nanoparticles due to the enhanced electrocatalytic activity of the electrodes. The sensing mechanism is attributed to the reaction of H2O2 generated by the oxidation of glucose near the gate. The optimized glucose sensors show the detection limits down to 0.5 μM and good selectivity, which are sensitive enough for non-invasive glucose detections in body fluids. The devices show the transconductances two orders of magnitude higher than that of a conventional silicon field effect transistor, which is the main reason for their high sensitivity. Moreover, the devices can be conveniently fabricated with low cost. Therefore, the whole-graphene solution-gated transistors are a high-performance sensing platform for not only glucose detections but also many other types of biosensors that may find practical applications in the near future. PMID:25655666

Method and Apparatus for In-Situ Health Monitoring of Solar Cells in Space

NASA Technical Reports Server (NTRS)

Krasowski, Michael J. (Inventor); Prokop, Norman F. (Inventor)

2012-01-01

Some embodiments of the present invention describe an apparatus that includes an oscillator, a ramp generator, and an inverter. The apparatus includes an oscillator, an inverter, and a ramp generator. The oscillator is configured to generate a waveform comprising a low time and a high time. The inverter is configured to receive the waveform generated by the oscillator, and invert the waveform. The ramp generator configured to increase a gate control voltage of a transistor connected to a solar cell, and rapidly decrease the gate control voltage of the transistor. During the low time of the waveform, a measurement of a current and a voltage of the solar cell is performed as the current and voltage of the solar cell are transmitted through a first channel and to a second channel. During the high time of the waveform, a measurement of a current of a shorted cell and a voltage reference is performed as the current of the shorted cell and the voltage reference are transmitted through the first channel and the second channel.

Wide-Field Imaging Using Nitrogen Vacancies

NASA Technical Reports Server (NTRS)

Englund, Dirk Robert (Inventor); Trusheim, Matthew Edwin (Inventor)

2017-01-01

Nitrogen vacancies in bulk diamonds and nanodiamonds can be used to sense temperature, pressure, electromagnetic fields, and pH. Unfortunately, conventional sensing techniques use gated detection and confocal imaging, limiting the measurement sensitivity and precluding wide-field imaging. Conversely, the present sensing techniques do not require gated detection or confocal imaging and can therefore be used to image temperature, pressure, electromagnetic fields, and pH over wide fields of view. In some cases, wide-field imaging supports spatial localization of the NVs to precisions at or below the diffraction limit. Moreover, the measurement range can extend over extremely wide dynamic range at very high sensitivity.

Molecular mechanism of voltage sensing in voltage-gated proton channels

PubMed Central

Rebolledo, Santiago; Perez, Marta E.

2013-01-01

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

NASA Technical Reports Server (NTRS)

Woo, D. S.

1982-01-01

The procedure used to generate MEBES masks and produce test wafers from the 10X Mann 1600 Pattern Generator Tape using existing CAD utility programs and the MEBES machine in the RCA Solid State Technology Center are described. The test vehicle used is the MSFC-designed SC102 Solar House Timing Circuit. When transforming the Mann 1600 tapes into MEBES tapes, extreme care is required in order to obtain accurate minimum linewidths when working with two different coding systems because the minimum grid sizes may be different for the two systems. The minimum grid sizes are 0.025 mil for MSFC Mann 1600 and 0.02 mil for MEBES. Some snapping to the next grid is therefore inevitable, and the results of this snapping effect are significant when submicron lines are present. However, no problem was noticed in the SC102 circuit because its minimum linewidth is 0.3 mil (7.6 microns). MEBES masks were fabricated and wafers were processed using the silicon-gate CMOS/SOS and aluminum-gate COS/MOS processing.

Odorant Inhibition of the Olfactory Cyclic Nucleotide-gated Channel with a Native Molecular Assembly

PubMed Central

Chen, Tsung-Yu; Takeuchi, Hiroko; Kurahashi, Takashi

2006-01-01

Human olfaction comprises the opposing actions of excitation and inhibition triggered by odorant molecules. In olfactory receptor neurons, odorant molecules not only trigger a G-protein–coupled signaling cascade but also generate various mechanisms to fine tune the odorant-induced current, including a low-selective odorant inhibition of the olfactory signal. This wide-range olfactory inhibition has been suggested to be at the level of ion channels, but definitive evidence is not available. Here, we report that the cyclic nucleotide-gated (CNG) cation channel, which is a key element that converts odorant stimuli into electrical signals, is inhibited by structurally unrelated odorants, consistent with the expression of wide-range olfactory inhibition. Interestingly, the inhibitory effect was small in the homo-oligomeric CNG channel composed only of the principal channel subunit, CNGA2, but became larger in channels consisting of multiple types of subunits. However, even in the channel containing all native subunits, the potency of the suppression on the cloned CNG channel appeared to be smaller than that previously shown in native olfactory neurons. Nonetheless, our results further showed that odorant suppressions are small in native neurons if the subsequent molecular steps mediated by Ca2+ are removed. Thus, the present work also suggests that CNG channels switch on and off the olfactory signaling pathway, and that the on and off signals may both be amplified by the subsequent olfactory signaling steps. PMID:16940558

Laser-Induced Incandescence Calibration via Gravimetric Sampling

NASA Technical Reports Server (NTRS)

VanderWal, R. L.; Zhou, Z.; Choi, M. Y.

1995-01-01

Various beam imaging and/or sheet forming optics delivered light at 1064 nm from a pulsed Nd:YAG laser for use either as a beam of 3 mm radius or as a laser sheet. Imaging measurements were performed with a grated intensified array camera equipped with an ultraviolet f4.5 lens and a 40 mm extension tube. Point measurements were performed using an ultraviolet 250 mm focal length lens to collect and focus the laser induced incandescence (LII) signal into a 1 meter long quartz optical fiber which directed the LII signal to a 1/4 meter monochromator. An aperture preceding the lens restricted the signal collection region to 1 cm along the laser beam at the center of the gravimetric chimney. Signals from the PMT were processed by a boxcar integrator whereas the images were captured digitally using a frame-grabber with 16 MByte of on-board memory. Both 'point' and planar measurements were made with detector gates of 250 ns to minimize possible morphology bias in collection of the LII signal. Additionally, the imaging measurements were performed with broadband spectral collection of the LII signal to maximize the signal and again minimize any potential effects of morphology dependent heating and/or cooling rates. Digital delay generators controlled the firing of he laser, detector gates and data acquisition. Neutral density filters were used for both sets of measurements to maintain signal levels within linear dynamic ranges of the detectors, the range being determined prior to experiments.

Image-guided adaptive gating of lung cancer radiotherapy: a computer simulation study

NASA Astrophysics Data System (ADS)

Aristophanous, Michalis; Rottmann, Joerg; Park, Sang-June; Nishioka, Seiko; Shirato, Hiroki; Berbeco, Ross I.

2010-08-01

The purpose of this study is to investigate the effect that image-guided adaptation of the gating window during treatment could have on the residual tumor motion, by simulating different gated radiotherapy techniques. There are three separate components of this simulation: (1) the 'Hokkaido Data', which are previously measured 3D data of lung tumor motion tracks and the corresponding 1D respiratory signals obtained during the entire ungated radiotherapy treatments of eight patients, (2) the respiratory gating protocol at our institution and the imaging performed under that protocol and (3) the actual simulation in which the Hokkaido Data are used to select tumor position information that could have been collected based on the imaging performed under our gating protocol. We simulated treatments with a fixed gating window and a gating window that is updated during treatment. The patient data were divided into different fractions, each with continuous acquisitions longer than 2 min. In accordance to the imaging performed under our gating protocol, we assume that we have tumor position information for the first 15 s of treatment, obtained from kV fluoroscopy, and for the rest of the fractions the tumor position is only available during the beam-on time from MV imaging. The gating window was set according to the information obtained from the first 15 s such that the residual motion was less than 3 mm. For the fixed gating window technique the gate remained the same for the entire treatment, while for the adaptive technique the range of the tumor motion during beam-on time was measured and used to adapt the gating window to keep the residual motion below 3 mm. The algorithm used to adapt the gating window is described. The residual tumor motion inside the gating window was reduced on average by 24% for the patients with regular breathing patterns and the difference was statistically significant (p-value = 0.01). The magnitude of the residual tumor motion depended on the regularity of the breathing pattern suggesting that image-guided adaptive gating should be combined with breath coaching. The adaptive gating window technique was able to track the exhale position of the breathing cycle quite successfully. Out of a total of 53 fractions the duty cycle was greater than 20% for 42 fractions for the fixed gating window technique and for 39 fractions for the adaptive gating window technique. The results of this study suggest that real-time updating of the gating window can result in reliably low residual tumor motion and therefore can facilitate safe margin reduction.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium-gallium-zinc oxide gate stack.

PubMed

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-20

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium-gallium-zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>10 4 ). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Synaptic behaviors of thin-film transistor with a Pt/HfO x /n-type indium–gallium–zinc oxide gate stack

NASA Astrophysics Data System (ADS)

Yang, Paul; Park, Daehoon; Beom, Keonwon; Kim, Hyung Jun; Kang, Chi Jung; Yoon, Tae-Sik

2018-07-01

We report a variety of synaptic behaviors in a thin-film transistor (TFT) with a metal-oxide-semiconductor gate stack that has a Pt/HfO x /n-type indium–gallium–zinc oxide (n-IGZO) structure. The three-terminal synaptic TFT exhibits a tunable synaptic weight with a drain current modulation upon repeated application of gate and drain voltages. The synaptic weight modulation is analog, voltage-polarity dependent reversible, and strong with a dynamic range of multiple orders of magnitude (>104). This modulation process emulates biological synaptic potentiation, depression, excitatory-postsynaptic current, paired-pulse facilitation, and short-term to long-term memory transition behaviors as a result of repeated pulsing with respect to the pulse amplitude, width, repetition number, and the interval between pulses. These synaptic behaviors are interpreted based on the changes in the capacitance of the Pt/HfO x /n-IGZO gate stack, the channel mobility, and the threshold voltage that result from the redistribution of oxygen ions by the applied gate voltage. These results demonstrate the potential of this structure for three-terminal synaptic transistor using the gate stack composed of the HfO x gate insulator and the IGZO channel layer.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

PubMed

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Tuning the metal-insulator crossover and magnetism in SrRuO 3 by ionic gating

DOE PAGES

Yi, Hee Taek; Gao, Bin; Xie, Wei; ...

2014-10-13

Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO 3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K,more » respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating.

PubMed

Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang-Wook; Podzorov, Vitaly

2014-10-13

Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. Here we report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO₃. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90-250 K and 70-100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

NASA Astrophysics Data System (ADS)

Liaw, Yue-Gie; Chen, Chii-Wen; Liao, Wen-Shiang; Wang, Mu-Chun; Zou, Xuecheng

2018-05-01

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of Id-Vg characteristics, threshold voltage (Vt), and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance (RSD), channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance (Gm) and drive current.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{supmore » 11} cm{sup −2}).« less

Extracellular Zinc Ion Inhibits ClC-0 Chloride Channels by Facilitating Slow Gating

PubMed Central

Chen, Tsung-Yu

1998-01-01

Extracellular Zn2+ was found to reversibly inhibit the ClC-0 Cl− channel. The apparent on and off rates of the inhibition were highly temperature sensitive, suggesting an effect of Zn2+ on the slow gating (or inactivation) of ClC-0. In the absence of Zn2+, the rate of the slow-gating relaxation increased with temperature, with a Q10 of ∼37. Extracellular Zn2+ facilitated the slow-gating process at all temperatures, but the Q10 did not change. Further analysis of the rate constants of the slow-gating process indicates that the effect of Zn2+ is mostly on the forward rate (the rate of inactivation) rather than the backward rate (the rate of recovery from inactivation) of the slow gating. When ClC-0 is bound with Zn2+, the equilibrium constant of the slow-gating process is increased by ∼30-fold, reflecting a 30-fold higher Zn2+ affinity in the inactivated channel than in the open-state channel. As examined through a wide range of membrane potentials, Zn2+ inhibits the opening of the slow gate with equal potency at all voltages, suggesting that a two-state model is inadequate to describe the slow-gating transition. Following a model originally proposed by Pusch and co-workers (Pusch, M., U. Ludewig, and T.J. Jentsch. 1997. J. Gen. Physiol. 109:105–116), the effect of Zn2+ on the activation curve of the slow gate can be well described by adding two constraints: (a) the dissociation constant for Zn2+ binding to the open channel is 30 μM, and (b) the difference in entropy between the open state and the transition state of the slow-gating process is increased by 27 J/ mol/°K for the Zn2+-bound channel. These results together indicate that extracellular Zn2+ inhibits ClC-0 by facilitating the slow-gating process. PMID:9834141

Comparison between beta radiation dose distribution due to LDR and HDR ocular brachytherapy applicators using GATE Monte Carlo platform.

PubMed

Mostafa, Laoues; Rachid, Khelifi; Ahmed, Sidi Moussa

2016-08-01

Eye applicators with 90Sr/90Y and 106Ru/106Rh beta-ray sources are generally used in brachytherapy for the treatment of eye diseases as uveal melanoma. Whenever, radiation is used in treatment, dosimetry is essential. However, knowledge of the exact dose distribution is a critical decision-making to the outcome of the treatment. The Monte Carlo technique provides a powerful tool for calculation of the dose and dose distributions which helps to predict and determine the doses from different shapes of various types of eye applicators more accurately. The aim of this work consisted in using the Monte Carlo GATE platform to calculate the 3D dose distribution on a mathematical model of the human eye according to international recommendations. Mathematical models were developed for four ophthalmic applicators, two HDR 90Sr applicators SIA.20 and SIA.6, and two LDR 106Ru applicators, a concave CCB model and a flat CCB model. In present work, considering a heterogeneous eye phantom and the chosen tumor, obtained results with the use of GATE for mean doses distributions in a phantom and according to international recommendations show a discrepancy with respect to those specified by the manufacturers. The QC of dosimetric parameters shows that contrarily to the other applicators, the SIA.20 applicator is consistent with recommendations. The GATE platform show that the SIA.20 applicator present better results, namely the dose delivered to critical structures were lower compared to those obtained for the other applicators, and the SIA.6 applicator, simulated with MCNPX generates higher lens doses than those generated by GATE. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Neurotoxic Effects of Linalool and β-Pinene on Tribolium castaneum Herbst.

PubMed

Pajaro-Castro, Nerlis; Caballero-Gallardo, Karina; Olivero-Verbel, Jesus

2017-11-24

Effective, ethical pest control requires the use of chemicals that are highly specific, safe, and ecofriendly. Linalool and β-pinene occur naturally as major constituents of the essential oils of many plant species distributed throughout the world, and thus meet these requirements. These monoterpenes were tested as repellents against Tribolium castaneum , using the area preference method, after four hours of exposure and the effect transcriptional of genes associated with neurotransmission. Changes in gene expression of acetylcholinesterase (Ace1), GABA-gated anion channel splice variant 3a6a (Rdl), GABA-gated ion channel (Grd), glutamate-gated chloride channel (Glucl), and histamine-gated chloride channel 2 (Hiscl2) were assessed and the interaction with proteins important for the insect using in silico methods was also studied. For linalool and β-pinene, the repellent concentration 50 (RC 50 ) values were 0.11 µL/cm² and 0.03 µL/cm², respectively. Both compounds induced overexpression of Hiscl2 gen in adult insects, and β-pinene also promoted the overexpression of Grd and the Ace1 gene. However, β-pinene and linalool had little potential to dock on computer-generated models for GABA-gated ion channel LCCH3, nicotinic acetylcholine receptor subunits alpha1 and alpha2, and putative octopamine/tyramine receptor proteins from T. castaneum as their respective binding affinities were marginal, and therefore the repellent action probably involved mechanisms other than direct interaction with these targets. Results indicated that β-pinene was more potent than linalool in inducing insect repellency, and also had a greater capacity to generate changes in the expression of genes involved in neuronal transmission.

Double-gated myocardial ASL perfusion imaging is robust to heart rate variation.

PubMed

Do, Hung Phi; Yoon, Andrew J; Fong, Michael W; Saremi, Farhood; Barr, Mark L; Nayak, Krishna S

2017-05-01

Cardiac motion is a dominant source of physiological noise (PN) in myocardial arterial spin labeled (ASL) perfusion imaging. This study investigates the sensitivity to heart rate variation (HRV) of double-gated myocardial ASL compared with the more widely used single-gated method. Double-gating and single-gating were performed on 10 healthy volunteers (n = 10, 3F/7M; age, 23-34 years) and eight heart transplant recipients (n = 8, 1F/7M; age, 26-76 years) at rest in the randomized order. Myocardial blood flow (MBF), PN, temporal signal-to-noise ratio (SNR), and HRV were measured. HRV ranged from 0.2 to 7.8 bpm. Double-gating PN did not depend on HRV, while single-gating PN increased with HRV. Over all subjects, double-gating provided a significant reduction in global PN (from 0.20 ± 0.15 to 0.11 ± 0.03 mL/g/min; P = 0.01) and per-segment PN (from 0.33 ± 0.23 to 0.21 ± 0.12 mL/g/min; P < 0.001), with significant increases in global temporal SNR (from 11 ± 8 to 18 ± 8; P = 0.02) and per-segment temporal SNR (from 7 ± 4 to 11 ± 12; P < 0.001) without significant difference in measured MBF. Single-gated myocardial ASL suffers from reduced temporal SNR, while double-gated myocardial ASL provides consistent temporal SNR independent of HRV. Magn Reson Med 77:1975-1980, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

Application of stochastic automata networks for creation of continuous time Markov chain models of voltage gating of gap junction channels.

PubMed

Snipas, Mindaugas; Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Paulauskas, Nerijus; Bukauskas, Feliksas F

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ~20 times.

Distribution and function of voltage-gated sodium channels in the nervous system.

PubMed

Wang, Jun; Ou, Shao-Wu; Wang, Yun-Jie

2017-11-02

Voltage-gated sodium channels (VGSCs) are the basic ion channels for neuronal excitability, which are crucial for the resting potential and the generation and propagation of action potentials in neurons. To date, at least nine distinct sodium channel isoforms have been detected in the nervous system. Recent studies have identified that voltage-gated sodium channels not only play an essential role in the normal electrophysiological activities of neurons but also have a close relationship with neurological diseases. In this study, the latest research findings regarding the structure, type, distribution, and function of VGSCs in the nervous system and their relationship to neurological diseases, such as epilepsy, neuropathic pain, brain tumors, neural trauma, and multiple sclerosis, are reviewed in detail.

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Steven; Gates, Bill; Podesta, John

2012-02-28

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called Fireside Chat that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas aboutmore » how small businesses and innovators can overcome the challenges that face many startups.« less

Stable optical frequency comb generation and applications in arbitrary waveform generation, signal processing and optical data mining

NASA Astrophysics Data System (ADS)

Ozharar, Sarper

This thesis focuses on the generation and applications of stable optical frequency combs. Optical frequency combs are defined as equally spaced optical frequencies with a fixed phase relation among themselves. The conventional source of optical frequency combs is the optical spectrum of the modelocked lasers. In this work, we investigated alternative methods for optical comb generation, such as dual sine wave phase modulation, which is more practical and cost effective compared to modelocked lasers stabilized to a reference. Incorporating these comblines, we have generated tunable RF tones using the serrodyne technique. The tuning range was +/-1 MHz, limited by the electronic waveform generator, and the RF carrier frequency is limited by the bandwidth of the photodetector. Similarly, using parabolic phase modulation together with time division multiplexing, RF chirp extension has been realized. Another application of the optical frequency combs studied in this thesis is real time data mining in a bit stream. A novel optoelectronic logic gate has been developed for this application and used to detect an 8 bit long target pattern. Also another approach based on orthogonal Hadamard codes have been proposed and explained in detail. Also novel intracavity modulation schemes have been investigated and applied for various applications such as (a) improving rational harmonic modelocking for repetition rate multiplication and pulse to pulse amplitude equalization, (b) frequency skewed pulse generation for ranging and (c) intracavity active phase modulation in amplitude modulated modelocked lasers for supermode noise spur suppression and integrated jitter reduction. The thesis concludes with comments on the future work and next steps to improve some of the results presented in this work.

Flash trajectory imaging of target 3D motion

NASA Astrophysics Data System (ADS)

Wang, Xinwei; Zhou, Yan; Fan, Songtao; He, Jun; Liu, Yuliang

2011-03-01

We present a flash trajectory imaging technique which can directly obtain target trajectory and realize non-contact measurement of motion parameters by range-gated imaging and time delay integration. Range-gated imaging gives the range of targets and realizes silhouette detection which can directly extract targets from complex background and decrease the complexity of moving target image processing. Time delay integration increases information of one single frame of image so that one can directly gain the moving trajectory. In this paper, we have studied the algorithm about flash trajectory imaging and performed initial experiments which successfully obtained the trajectory of a falling badminton. Our research demonstrates that flash trajectory imaging is an effective approach to imaging target trajectory and can give motion parameters of moving targets.

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f{sub max} as high as 100 GHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mokerov, V. G., E-mail: vgmokerov@yandex.ru; Kuznetsov, A. L.; Fedorov, Yu. V.

2009-04-15

The N-Al{sub 0.27}Ga{sub 0.73}N/GaN High Electron Mobility Transistors (HEMTs) with different gate lengths L{sub g} (ranging from 170 nm to 0.5 {mu}m) and gate widths W{sub s} (ranging from 100 to 1200 {mu}m) have been studied. The S parameters have been measured; these parameters have been used to determine the current-gain cutoff frequency f{sub t}, the maximum oscillation frequency f{sub max}, and the power gain MSG/MAG and Mason's coefficients were investigated in the frequency range from 10 MHz to 67 GHz in relation to the gate length and gate width. It was found that the frequencies f{sub t} and f{submore » max} attain their maximum values of f{sub t} = 48 GHz and f{sub max} = 100 GHz at L{sub g} = 170 nm and W{sub g} = 100 {mu}m. The optimum values of W{sub g} and output power P out of the basic transistors have been determined for different frequencies of operation. It has also been demonstrated that the 170 nm Al{sub 0.27}Ga{sub 0.73}N/GaN HEMT technology provides both good frequency characteristics and high breakdown voltages and is very promising for high-frequency applications (up to 40 GHz)« less

Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

NASA Astrophysics Data System (ADS)

Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

2016-08-01

The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

Conformational changes in the M2 muscarinic receptor induced by membrane voltage and agonist binding

PubMed Central

Navarro-Polanco, Ricardo A; Galindo, Eloy G Moreno; Ferrer-Villada, Tania; Arias, Marcelo; Rigby, J Ryan; Sánchez-Chapula, José A; Tristani-Firouzi, Martin

2011-01-01

Abstract The ability to sense transmembrane voltage is a central feature of many membrane proteins, most notably voltage-gated ion channels. Gating current measurements provide valuable information on protein conformational changes induced by voltage. The recent observation that muscarinic G-protein-coupled receptors (GPCRs) generate gating currents confirms their intrinsic capacity to sense the membrane electrical field. Here, we studied the effect of voltage on agonist activation of M2 muscarinic receptors (M2R) in atrial myocytes and how agonist binding alters M2R gating currents. Membrane depolarization decreased the potency of acetylcholine (ACh), but increased the potency and efficacy of pilocarpine (Pilo), as measured by ACh-activated K+ current, IKACh. Voltage-induced conformational changes in M2R were modified in a ligand-selective manner: ACh reduced gating charge displacement while Pilo increased the amount of charge displaced. Thus, these ligands manifest opposite voltage-dependent IKACh modulation and exert opposite effects on M2R gating charge displacement. Finally, mutations in the putative ligand binding site perturbed the movement of the M2R voltage sensor. Our data suggest that changes in voltage induce conformational changes in the ligand binding site that alter the agonist–receptor interaction in a ligand-dependent manner. Voltage-dependent GPCR modulation has important implications for cellular signalling in excitable tissues. Gating current measurement allows for the tracking of subtle conformational changes in the receptor that accompany agonist binding and changes in membrane voltage. PMID:21282291

An Investigation of Estuary Gate Effect on Freshwater Fish Biotope and a Study on Ecological Scheduling

NASA Astrophysics Data System (ADS)

Zhang, H. W.; Hu, P.; Ni, G.; Jia, Y. W.; Ge, J. J.

2017-12-01

The presence of an estuary gate changes the existing hydrologic regime and produces a far-reaching and accumulated impact on river biotopes and fish stocks. This work investigates the estuary gate effect in the Yong River valley on the species Elopichthys bambusa (E. bambusa). By combininge hydrodynamic results from the MIKE FLOOD model with observations of the E. bambusa habitat indicators. After the establishment of the gate, the hydrological conditions required for spawning, egg hatching and oviposition stimulation, were analysed, and the corresponding strategies for ecological water demand were proposed. This study finds that satisfactory fish egg hatching hydrodynamic conditions are created when the Fenghua River flow reaches 120 m3/s in the spawning season. With Fenghua River, Yao River gate, and Yong River gate discharges at 120 m3/s, 90 m3/s, and 210 m3/s respectively, an average flow speed increase above 0.2 m/s/day may be generated for E. bambusa spawning sites and migration passages. This hydraulic condition stimulates spawning in natural streams. At the most suitable spawning season temperature, an ecological scheduling scheme that maintains a pulse flow for 5-7 days provides E. bambusa with the hydrodynamic conditions required for the whole process of reproduction, thereby maintaining healthy stream ecology. The flow rate scheduling rules, as provided in this paper, may serve as references in watershed ecological scheduling after gate installation.

SU-E-T-254: Optimization of GATE and PHITS Monte Carlo Code Parameters for Uniform Scanning Proton Beam Based On Simulation with FLUKA General-Purpose Code

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosu, K; Department of Medical Physics ' Engineering, Osaka University Graduate School of Medicine, Osaka; Takashina, M

Purpose: Monte Carlo codes are becoming important tools for proton beam dosimetry. However, the relationships between the customizing parameters and percentage depth dose (PDD) of GATE and PHITS codes have not been reported which are studied for PDD and proton range compared to the FLUKA code and the experimental data. Methods: The beam delivery system of the Indiana University Health Proton Therapy Center was modeled for the uniform scanning beam in FLUKA and transferred identically into GATE and PHITS. This computational model was built from the blue print and validated with the commissioning data. Three parameters evaluated are the maximummore » step size, cut off energy and physical and transport model. The dependence of the PDDs on the customizing parameters was compared with the published results of previous studies. Results: The optimal parameters for the simulation of the whole beam delivery system were defined by referring to the calculation results obtained with each parameter. Although the PDDs from FLUKA and the experimental data show a good agreement, those of GATE and PHITS obtained with our optimal parameters show a minor discrepancy. The measured proton range R90 was 269.37 mm, compared to the calculated range of 269.63 mm, 268.96 mm, and 270.85 mm with FLUKA, GATE and PHITS, respectively. Conclusion: We evaluated the dependence of the results for PDDs obtained with GATE and PHITS Monte Carlo generalpurpose codes on the customizing parameters by using the whole computational model of the treatment nozzle. The optimal parameters for the simulation were then defined by referring to the calculation results. The physical model, particle transport mechanics and the different geometrybased descriptions need accurate customization in three simulation codes to agree with experimental data for artifact-free Monte Carlo simulation. This study was supported by Grants-in Aid for Cancer Research (H22-3rd Term Cancer Control-General-043) from the Ministry of Health, Labor and Welfare of Japan, Grants-in-Aid for Scientific Research (No. 23791419), and JSPS Core-to-Core program (No. 23003). The authors have no conflict of interest.« less

Reference ranges for LVEF and LV volumes from electrocardiographically gated 82Rb cardiac PET/CT using commercially available software.

PubMed

Bravo, Paco E; Chien, David; Javadi, Mehrbod; Merrill, Jennifer; Bengel, Frank M

2010-06-01

Electrocardiographic gating is increasingly used for (82)Rb cardiac PET/CT, but reference ranges for global functional parameters are not well defined. We sought to establish reference values for left ventricular ejection fraction (LVEF), end systolic volume (ESV), and end diastolic volume (EDV) using 4 different commercial software packages. Additionally, we compared 2 different approaches for the definition of a healthy individual. Sixty-two subjects (mean age +/- SD, 49 +/- 9 y; 85% women; mean body mass index +/- SD, 34 +/- 10 kg/m(2)) who underwent (82)Rb-gated myocardial perfusion PET/CT were evaluated. All subjects had normal myocardial perfusion and no history of coronary artery disease (CAD) or cardiomyopathy. Subgroup 1 consisted of 34 individuals with low pretest probability of CAD (<10%), and subgroup 2 comprised 28 subjects who had no atherosclerosis on a coronary CT angiogram obtained concurrently during the PET/CT session. LVEF, ESV, and EDV were calculated at rest and during dipyridamole-induced stress, using CardIQ Physio (a dedicated PET software) and the 3 major SPECT software packages (Emory Cardiac Toolbox, Quantitative Gated SPECT, and 4DM-SPECT). Mean LVEF was significantly different among all 4 software packages. LVEF was most comparable between CardIQ Physio (62% +/- 6% and 54% +/- 7% at stress and rest, respectively) and 4DM-SPECT (64% +/- 7% and 56% +/- 8%, respectively), whereas Emory Cardiac Toolbox yielded higher values (71% +/- 6% and 65% +/- 6%, respectively, P < 0.001) and Quantitated Gated SPECT lower values (56% +/- 8% and 50% +/- 8%, respectively, P < 0.001). Subgroup 1 (low likelihood) demonstrated higher LVEF values than did subgroup 2 (normal CT angiography findings), using all software packages (P < 0.05). However, mean ESV and EDV at stress and rest were comparable between both subgroups (p = NS). Intra- and interobserver agreement were excellent for all methods. The reference range of LVEF and LV volumes from gated (82)Rb PET/CT varies significantly among available software programs and therefore cannot be used interchangeably. LVEF results were higher when healthy subjects were defined by a low pretest probability of CAD than by normal CT angiography results.

SU-E-J-253: Evaluation of 4DCT Images with Correlation of RPM Signals to Tumor Motion for Respiratory-Gated Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, TK; Ewald, A; Schultz, T

2014-06-01

Purpose: The amplitudes of lung tumor target motion and RPM signals are different from each other. Also, RPM system does not have in-depth RPM signal analysis tool. We have developed an algorithm that analyzes RPM signals for its stability as well as correlativity to the tumor motion. Methods: We used a Philips Big Bore CT scanner with a Varian Real-Time Position Management™ (RPM) system attached. 4DCT images were reviewed and tumor motion amplitudes of full breathing in superior-inferior, anterior-posterior, and left-right directions were measured. RPM signals were analyzed with the algorithm developed with Matlab. Average signal period, amplitude and statisticalmore » stability of the full breathing pattern as well as the pattern around full expiration were calculated. RPM signal amplitudes were normalized to measured tumor motion amplitudes so that selected gating phases (30%–70% or 40%–60%) allow tumor motion under 5.0mm. Results: Twelve patient cases were analyzed in this study with GTV sizes ranged from 1.0cm to 3.0cm diameter. The periods and amplitudes of RPM signal ranged from 3.1seconds to 6.5seconds and from 0.2cm to 1.7cm, respectively. RPM signals were most stable at full expiration. The standard deviation of the RPM signal peaks at full expiration was <0.11cm, and that of gated amplitudes was <0.25cm. Tumor motion amplitudes were primary in superior-inferior direction and minor (<=0.2cm) in other directions on all analyzed cases, ranged from 0.2cm to 2.5cm. The amplitudes increases with the tumor located toward the diaphragm. The gated phases were selected so that the average gated tumor motion amplitude as well as that plus deviation became under 0.5cm in superior-inferior direction. Conclusion: We were able to determine the respiratory-gated phases in RPM signals employing measured tumor motion amplitudes as well as developed RPM signal analyzer through correlation process. The RPM signal amplitudes do not represent tumor motion because of its location.« less

Top-gated field-effect LaAlO{sub 3}/SrTiO{sub 3} devices made by ion-irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hurand, S.; Jouan, A.; Feuillet-Palma, C.

2016-02-01

We present a method to fabricate top-gated field-effect devices in a LaAlO{sub 3}/SrTiO{sub 3} two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting T{sub c} can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for amore » strong depletion of the 2-DEG.« less

Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

NASA Astrophysics Data System (ADS)

Wu, Guangjian; Wang, Xudong; Wang, Peng; Huang, Hai; Chen, Yan; Sun, Shuo; Shen, Hong; Lin, Tie; Wang, Jianlu; Zhang, Shangtao; Bian, Lifeng; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2016-09-01

Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.

UTOFIA: an underwater time-of-flight image acquisition system

NASA Astrophysics Data System (ADS)

Driewer, Adrian; Abrosimov, Igor; Alexander, Jonathan; Benger, Marc; O'Farrell, Marion; Haugholt, Karl Henrik; Softley, Chris; Thielemann, Jens T.; Thorstensen, Jostein; Yates, Chris

2017-10-01

In this article the development of a newly designed Time-of-Flight (ToF) image sensor for underwater applications is described. The sensor is developed as part of the project UTOFIA (underwater time-of-flight image acquisition) funded by the EU within the Horizon 2020 framework. This project aims to develop a camera based on range gating that extends the visible range compared to conventional cameras by a factor of 2 to 3 and delivers real-time range information by means of a 3D video stream. The principle of underwater range gating as well as the concept of the image sensor are presented. Based on measurements on a test image sensor a pixel structure that suits best to the requirements has been selected. Within an extensive characterization underwater the capability of distance measurements in turbid environments is demonstrated.

6. GOVERNOR AND SPEED CONTROL MECHANISMS TANK, AT LEFT AN ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

6. GOVERNOR AND SPEED CONTROL MECHANISMS TANK, AT LEFT AN ACCUMULATOR TANK WHICH STORE AIR PRESSURE TO OPEN GATES AND GET GENERATOR STARTED. LARGE TANK AT RIGHT IS THE MAIN GUARD VALVE FOR THE GENERATOR - Los Angeles Aqueduct, Haiwee Power Plant, Los Angeles, Los Angeles County, CA

Time-Gating Processes in Intra-Cavity Mode-Locking Devices Like Saturable Absorbers and Kerr Cells

NASA Technical Reports Server (NTRS)

Prasad, Narasimha; Roychoudhuri, Chandrasekhar

2010-01-01

Photons are non-interacting entities. Light beams do not interfere by themselves. Light beams constituting different laser modes (frequencies) are not capable of re-arranging their energies from extended time-domain to ultra-short time-domain by themselves without the aid of light-matter interactions with suitable intra-cavity devices. In this paper we will discuss the time-gating properties of intra-cavity "mode-locking" devices that actually help generate a regular train of high energy wave packets.

One GigaSample Per Second Data Acquisition using Available Gate Array Technology

NASA Technical Reports Server (NTRS)

Wagner, K.W.

1999-01-01

A new National Aeronautics and Space Administration instrument forced demanding requirements upon its altimeter digitizer system. Eight-bit data would be generated at a rate of one billion samples per second. NASA had never before attempted to capture such high-speed data in the radiation, low-power, no-convective-cooling, limited-board-area environment of space. This presentation describes how the gate array technology available at the time of the design was used to implement this one gigasample per second data acquisition system

Control-Structure Ratings on the Fox River at McHenry and Algonquin, Illinois

USGS Publications Warehouse

Straub, Timothy D.; Johnson, Gary P.; Hortness, Jon E.; Parker, Joseph R.

2009-01-01

The Illinois Department of Natural Resources-Office of Water Resources operates control structures on a reach of the Fox River in northeastern Illinois between McHenry and Algonquin. The structures maintain water levels in the river for flood-control and recreational purposes. This report documents flow ratings for hinged-crest gates, a broad-crested weir, sluice gates, and an ogee spillway on the control structures at McHenry and Algonquin. The ratings were determined by measuring headwater and tailwater stage along with streamflow at a wide range of flows at different gate openings. Standard control-structure rating techniques were used to rate each control structure. The control structures at McHenry consist of a 221-feet(ft)-long broad-crested weir, a 4-ft-wide fish ladder, a 50-ft-wide hinged-crest gate, five 13.75-ft-wide sluice gates, and a navigational lock. Sixty measurements were used to rate the McHenry structures. The control structures at Algonquin consist of a 242-ft-long ogee spillway and a 50-ft-wide hinged-crest gate. Forty-one measurements were used to rate the Algonquin control structures.

Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

NASA Astrophysics Data System (ADS)

Song, In-Hyouk; Forfang, William B. D.; Cole, Bryan; You, Byoung Hee

2014-10-01

The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz.

Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.

PubMed

Singh, Kunwar Pal; Guo, Chunlei

2017-06-21

The nanochannel diameter and surface charge density have a significant impact on current-voltage characteristics in a nanofluidic transistor. We have simulated the effect of the channel diameter and surface charge density on current-voltage characteristics of a fluidic nanochannel with positive surface charge on its walls and a gate electrode on its surface. Anion depletion/enrichment leads to a decrease/increase in ion current with gate potential. The ion current tends to increase linearly with gate potential for narrow channels at high surface charge densities and narrow channels are more effective to control the ion current at high surface charge densities. The current-voltage characteristics are highly nonlinear for wide channels at low surface charge densities and they show different regions of current change with gate potential. The ion current decreases with gate potential after attaining a peak value for wide channels at low values of surface charge densities. At low surface charge densities, the ion current can be controlled by a narrow range of gate potentials for wide channels. The current change with source drain voltage shows ohmic, limiting and overlimiting regions.

Inherited disorders of voltage-gated sodium channels

PubMed Central

George, Alfred L.

2005-01-01

A variety of inherited human disorders affecting skeletal muscle contraction, heart rhythm, and nervous system function have been traced to mutations in genes encoding voltage-gated sodium channels. Clinical severity among these conditions ranges from mild or even latent disease to life-threatening or incapacitating conditions. The sodium channelopathies were among the first recognized ion channel diseases and continue to attract widespread clinical and scientific interest. An expanding knowledge base has substantially advanced our understanding of structure-function and genotype-phenotype relationships for voltage-gated sodium channels and provided new insights into the pathophysiological basis for common diseases such as cardiac arrhythmias and epilepsy. PMID:16075039

Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

NASA Astrophysics Data System (ADS)

Beer, Chris; Whall, Terry; Parker, Evan; Leadley, David; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc; Szostak, Slawomir; Gluszko, Grzegorz; Lukasiak, Lidia

2007-12-01

Effective mobility measurements have been made at 4.2K on high performance high-k gated germanium p-type metal-oxide-semiconductor field effect transistors with a range of Ge/gate dielectric interface state densities. The mobility is successfully modelled by assuming surface roughness and interface charge scattering at the SiO2 interlayer/Ge interface. The deduced interface charge density is approximately equal to the values obtained from the threshold voltage and subthreshold slope measurements on each device. A hydrogen anneal reduces both the interface state density and the surface root mean square roughness by 20%.

Optical NOR logic gate design on square lattice photonic crystal platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

D’souza, Nirmala Maria, E-mail: nirmala@cukerala.ac.in; Mathew, Vincent, E-mail: vincent@cukerala.ac.in

We numerically demonstrate a new configuration of all-optical NOR logic gate with square lattice photonic crystal (PhC) waveguide using finite difference time domain (FDTD) method. The logic operations are based on interference effect of optical waves. We have determined the operating frequency range by calculating the band structure for a perfectly periodic PhC using plane wave expansion (PWE) method. Response time of this logic gate is 1.98 ps and it can be operated with speed about 513 GB/s. The proposed device consists of four linear waveguides and a square ring resonator waveguides on PhC platform.

Emergence of ion channel modal gating from independent subunit kinetics.

PubMed

Bicknell, Brendan A; Goodhill, Geoffrey J

2016-09-06

Many ion channels exhibit a slow stochastic switching between distinct modes of gating activity. This feature of channel behavior has pronounced implications for the dynamics of ionic currents and the signaling pathways that they regulate. A canonical example is the inositol 1,4,5-trisphosphate receptor (IP3R) channel, whose regulation of intracellular Ca(2+) concentration is essential for numerous cellular processes. However, the underlying biophysical mechanisms that give rise to modal gating in this and most other channels remain unknown. Although ion channels are composed of protein subunits, previous mathematical models of modal gating are coarse grained at the level of whole-channel states, limiting further dialogue between theory and experiment. Here we propose an origin for modal gating, by modeling the kinetics of ligand binding and conformational change in the IP3R at the subunit level. We find good agreement with experimental data over a wide range of ligand concentrations, accounting for equilibrium channel properties, transient responses to changing ligand conditions, and modal gating statistics. We show how this can be understood within a simple analytical framework and confirm our results with stochastic simulations. The model assumes that channel subunits are independent, demonstrating that cooperative binding or concerted conformational changes are not required for modal gating. Moreover, the model embodies a generally applicable principle: If a timescale separation exists in the kinetics of individual subunits, then modal gating can arise as an emergent property of channel behavior.

Current control of time-averaged magnetization in superparamagnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Bapna, Mukund; Majetich, Sara A.

2017-12-01

This work investigates spin transfer torque control of time-averaged magnetization in a small 20 nm × 60 nm nanomagnet with a low thermal stability factor, Δ ˜ 11. Here, the nanomagnet is a part of a magnetic tunnel junction and fluctuates between parallel and anti-parallel magnetization states with respect to the magnetization of the reference layer generating a telegraph signal in the current versus time measurements. The response of the nanomagnet to an external field is first analyzed to characterize the magnetic properties. We then show that the time-averaged magnetization in the telegraph signal can be fully controlled between +1 and -1 by voltage over a small range of 0.25 V. NIST Statistical Test Suite analysis is performed for testing true randomness of the telegraph signal that the device generates when operated at near critical current values for spin transfer torque. Utilizing the probabilistic nature of the telegraph signal generated at two different voltages, a prototype demonstration is shown for multiplication of two numbers using an artificial AND logic gate.

Gate tunable parallel double quantum dots in InAs double-nanowire devices

NASA Astrophysics Data System (ADS)

Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K.; Jeppesen, S.; Samuelson, L.; Xu, H. Q.; Tarucha, S.

2017-12-01

We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.

Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

PubMed

Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

2018-02-19

The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

A quantum Fredkin gate

PubMed Central

Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

2016-01-01

Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Towards Self-Clocked Gated OCDMA Receiver

NASA Astrophysics Data System (ADS)

Idris, S.; Osadola, T.; Glesk, I.

2013-02-01

A novel incoherent OCDMA receiver with incorporated all-optical clock recovery for self-synchronization of a time gate for the multi access interferences (MAI) suppression and minimizing the effect of data time jitter in incoherent OCDMA system was successfully developed and demonstrated. The solution was implemented and tested in a multiuser environment in an out of the laboratory OCDMA testbed with two-dimensional wavelength-hopping time-spreading coding scheme and OC-48 (2.5 Gbp/s) data rate. The self-clocked all-optical time gate uses SOA-based fibre ring laser optical clock, recovered all-optically from the received OCDMA traffic to control its switching window for cleaning the autocorrelation peak from the surrounding MAI. A wider eye opening was achieved when the all-optically recovered clock from received data was used for synchronization if compared to a static approach with the RF clock being generated by a RF synthesizer. Clean eye diagram was also achieved when recovered clock is used to drive time gating.

Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

PubMed

Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

2016-10-01

Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. Copyright © 2016 Elsevier B.V. All rights reserved.

Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony

PubMed Central

Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S.

2016-01-01

Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity, the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations. PMID:28154616

High-sensitivity assay for Hg (II) and Ag (I) ion detection: A new class of droplet digital PCR logic gates for an intelligent DNA calculator.

PubMed

Cheng, Nan; Zhu, Pengyu; Xu, Yuancong; Huang, Kunlun; Luo, Yunbo; Yang, Zhansen; Xu, Wentao

2016-10-15

The first example of droplet digital PCR logic gates ("YES", "OR" and "AND") for Hg (II) and Ag (I) ion detection has been constructed based on two amplification events triggered by a metal-ion-mediated base mispairing (T-Hg(II)-T and C-Ag(I)-C). In this work, Hg(II) and Ag(I) were used as the input, and the "true" hierarchical colors or "false" green were the output. Through accurate molecular recognition and high sensitivity amplification, positive droplets were generated by droplet digital PCR and viewed as the basis of hierarchical digital signals. Based on this principle, YES gate for Hg(II) (or Ag(I)) detection, OR gate for Hg(II) or Ag(I) detection and AND gate for Hg(II) and Ag(I) detection were developed, and their sensitively and selectivity were reported. The results indicate that the ddPCR logic system developed based on the different indicators for Hg(II) and Ag(I) ions provides a useful strategy for developing advanced detection methods, which are promising for multiplex metal ion analysis and intelligent DNA calculator design applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Design and implementation of low power clock gated 64-bit ALU on ultra scale FPGA

NASA Astrophysics Data System (ADS)

Gupta, Ashutosh; Murgai, Shruti; Gulati, Anmol; Kumar, Pradeep

2016-03-01

64-bit energy efficient Arithmetic and Logic Unit using negative latch based clock gating technique is designed in this paper. The 64-bit ALU is designed using multiplexer based full adder cell. We have designed a 64-bit ALU with a gated clock. We have used negative latch based circuit for generating gated clock. This gated clock is used to control the multiplexer based 64-bit ALU. The circuit has been synthesized on kintex FPGA through Xilinx ISE Design Suite 14.7 using 28 nm technology in Verilog HDL. The circuit has been simulated on Modelsim 10.3c. The design is verified using System Verilog on QuestaSim in UVM environment. We have achieved 74.07%, 92. 93% and 95.53% reduction in total clock power, 89.73%, 91.35% and 92.85% reduction in I/Os power, 67.14%, 62.84% and 74.34% reduction in dynamic power and 25.47%, 29.05% and 46.13% reduction in total supply power at 20 MHz, 200 MHz and 2 GHz frequency respectively. The power has been calculated using XPower Analyzer tool of Xilinx ISE Design Suite 14.3.

Controlling Working Memory Operations by Selective Gating: The Roles of Oscillations and Synchrony.

PubMed

Dipoppa, Mario; Szwed, Marcin; Gutkin, Boris S

2016-01-01

Working memory (WM) is a primary cognitive function that corresponds to the ability to update, stably maintain, and manipulate short-term memory (ST M) rapidly to perform ongoing cognitive tasks. A prevalent neural substrate of WM coding is persistent neural activity , the property of neurons to remain active after having been activated by a transient sensory stimulus. This persistent activity allows for online maintenance of memory as well as its active manipulation necessary for task performance. WM is tightly capacity limited. Therefore, selective gating of sensory and internally generated information is crucial for WM function. While the exact neural substrate of selective gating remains unclear, increasing evidence suggests that it might be controlled by modulating ongoing oscillatory brain activity. Here, we review experiments and models that linked selective gating, persistent activity, and brain oscillations, putting them in the more general mechanistic context of WM. We do so by defining several operations necessary for successful WM function and then discussing how such operations may be carried out by mechanisms suggested by computational models. We specifically show how oscillatory mechanisms may provide a rapid and flexible active gating mechanism for WM operations.

Single calcium channel domain gating of synaptic vesicle fusion at fast synapses; analysis by graphic modeling

PubMed Central

Stanley, Elise F

2015-01-01

At fast-transmitting presynaptic terminals Ca2+ enter through voltage gated calcium channels (CaVs) and bind to a synaptic vesicle (SV) -associated calcium sensor (SV-sensor) to gate fusion and discharge. An open CaV generates a high-concentration plume, or nanodomain of Ca2+ that dissipates precipitously with distance from the pore. At most fast synapses, such as the frog neuromuscular junction (NMJ), the SV sensors are located sufficiently close to individual CaVs to be gated by single nanodomains. However, at others, such as the mature rodent calyx of Held (calyx of Held), the physiology is more complex with evidence that CaVs that are both close and distant from the SV sensor and it is argued that release is gated primarily by the overlapping Ca2+ nanodomains from many CaVs. We devised a 'graphic modeling' method to sum Ca2+ from individual CaVs located at varying distances from the SV-sensor to determine the SV release probability and also the fraction of that probability that can be attributed to single domain gating. This method was applied first to simplified, low and high CaV density model release sites and then to published data on the contrasting frog NMJ and the rodent calyx of Held native synapses. We report 3 main predictions: the SV-sensor is positioned very close to the point at which the SV fuses with the membrane; single domain-release gating predominates even at synapses where the SV abuts a large cluster of CaVs, and even relatively remote CaVs can contribute significantly to single domain-based gating. PMID:26457441

Lower-upper-threshold correlation for underwater range-gated imaging self-adaptive enhancement.

PubMed

Sun, Liang; Wang, Xinwei; Liu, Xiaoquan; Ren, Pengdao; Lei, Pingshun; He, Jun; Fan, Songtao; Zhou, Yan; Liu, Yuliang

2016-10-10

In underwater range-gated imaging (URGI), enhancement of low-brightness and low-contrast images is critical for human observation. Traditional histogram equalizations over-enhance images, with the result of details being lost. To compress over-enhancement, a lower-upper-threshold correlation method is proposed for underwater range-gated imaging self-adaptive enhancement based on double-plateau histogram equalization. The lower threshold determines image details and compresses over-enhancement. It is correlated with the upper threshold. First, the upper threshold is updated by searching for the local maximum in real time, and then the lower threshold is calculated by the upper threshold and the number of nonzero units selected from a filtered histogram. With this method, the backgrounds of underwater images are constrained with enhanced details. Finally, the proof experiments are performed. Peak signal-to-noise-ratio, variance, contrast, and human visual properties are used to evaluate the objective quality of the global and regions of interest images. The evaluation results demonstrate that the proposed method adaptively selects the proper upper and lower thresholds under different conditions. The proposed method contributes to URGI with effective image enhancement for human eyes.

Tunable valley polarization by a gate voltage when an electron tunnels through multiple line defects in graphene.

PubMed

Liu, Zhe; Jiang, Liwei; Zheng, Yisong

2015-02-04

By means of an appropriate wave function connection condition, we study the electronic structure of a line defect superlattice of graphene with the Dirac equation method. We obtain the analytical dispersion relation, which can simulate well the tight-binding numerical result about the band structure of the superlattice. Then, we generalize this theoretical method to study the electronic transmission through a potential barrier where multiple line defects are periodically patterned. We find that there exists a critical incident angle which restricts the electronic transmission through multiple line defects within a specific incident angle range. The critical angle depends sensitively on the potential barrier height, which can be modulated by a gate voltage. As a result, non-trivial transmissions of K and K' valley electrons are restricted, respectively, in two distinct ranges of the incident angle. Our theoretical result demonstrates that a gate voltage can act as a feasible measure to tune the valley polarization when electrons tunnel through multiple line defects.

Transient digitizer with displacement current samplers

DOEpatents

McEwan, T.E.

1996-05-21

A low component count, high speed sample gate, and digitizer architecture using the sample gates is based on use of a signal transmission line, a strobe transmission line and a plurality of sample gates connected to the sample transmission line at a plurality of positions. The sample gates include a strobe pickoff structure near the strobe transmission line which generates a charge displacement current in response to propagation of the strobe signal on the strobe transmission line sufficient to trigger the sample gate. The sample gate comprises a two-diode sampling bridge and is connected to a meandered signal transmission line at one end and to a charge-holding cap at the other. The common cathodes are reverse biased. A voltage step is propagated down the strobe transmission line. As the step propagates past a capacitive pickoff, displacement current i=c(dv/dT), flows into the cathodes, driving the bridge into conduction and thereby charging the charge-holding capacitor to a value related to the signal. A charge amplifier converts the charge on the charge-holding capacitor to an output voltage. The sampler is mounted on a printed circuit board, and the sample transmission line and strobe transmission line comprise coplanar microstrips formed on a surface of the substrate. Also, the strobe pickoff structure may comprise a planar pad adjacent the strobe transmission line on the printed circuit board. 16 figs.

Transient digitizer with displacement current samplers

DOEpatents

McEwan, Thomas E.

1996-01-01

A low component count, high speed sample gate, and digitizer architecture using the sample gates is based on use of a signal transmission line, a strobe transmission line and a plurality of sample gates connected to the sample transmission line at a plurality of positions. The sample gates include a strobe pickoff structure near the strobe transmission line which generates a charge displacement current in response to propagation of the strobe signal on the strobe transmission line sufficient to trigger the sample gate. The sample gate comprises a two-diode sampling bridge and is connected to a meandered signal transmission line at one end and to a charge-holding cap at the other. The common cathodes are reverse biased. A voltage step is propagated down the strobe transmission line. As the step propagates past a capacitive pickoff, displacement current i=c(dv/dT), flows into the cathodes, driving the bridge into conduction and thereby charging the charge-holding capacitor to a value related to the signal. A charge amplifier converts the charge on the charge-holding capacitor to an output voltage. The sampler is mounted on a printed circuit board, and the sample transmission line and strobe transmission line comprise coplanar microstrips formed on a surface of the substrate. Also, the strobe pickoff structure may comprise a planar pad adjacent the strobe transmission line on the printed circuit board.

Pure spin current and phonon thermoelectric transport in a triangulene-based molecular junction.

PubMed

Wang, Qiang; Li, Jianwei; Nie, Yihang; Xu, Fuming; Yu, Yunjin; Wang, Bin

2018-06-13

The experimental synthesis and characterization of enigmatic triangulene were reported for the first time recently. Based on this enigmatic molecule, we proposed a triangulene-based molecular junction and presented first principles calculations to investigate the electron and phonon thermoelectric transport properties. Numerical results show that the spin polarized electric transport properties of the triangulene-based molecular junction can be adjusted effectively by bias voltage and gate voltage. Through varying the gate voltage applied on the triangulene molecule, the system can exhibit a perfect spin filter effect. When a temperature gradient is applied between the two leads, spin up current and spin down current flow along opposite directions in the system simultaneously. Thus pure spin current can be obtained on a large scale by changing the temperature, temperature gradient, and gate voltage. When the phonon vibration effect is considered in thermal transport, the figure of merit is suppressed distinctively especially when the temperature is within the 10 K < T < 100 K range. More importantly, a large spin figure of merit can be achieved accompanied by a small charge figure of merit by adjusting the temperature, gate voltage and chemical potential in a wide range, which indicates a favorable application prospect of the triangulene-based molecular junction as a spin calorigenic device.

The Impact of Gate Width Setting and Gate Utilization Factors on Plutonium Assay in Passive Correlated Neutron Counting

DOE PAGES

Henzlova, Daniela; Menlove, Howard Olsen; Croft, Stephen; ...

2015-06-15

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimummore » gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.« less

The human respiratory gate

NASA Technical Reports Server (NTRS)

Eckberg, Dwain L.

2003-01-01

Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

Application of Stochastic Automata Networks for Creation of Continuous Time Markov Chain Models of Voltage Gating of Gap Junction Channels

PubMed Central

Pranevicius, Henrikas; Pranevicius, Mindaugas; Pranevicius, Osvaldas; Bukauskas, Feliksas F.

2015-01-01

The primary goal of this work was to study advantages of numerical methods used for the creation of continuous time Markov chain models (CTMC) of voltage gating of gap junction (GJ) channels composed of connexin protein. This task was accomplished by describing gating of GJs using the formalism of the stochastic automata networks (SANs), which allowed for very efficient building and storing of infinitesimal generator of the CTMC that allowed to produce matrices of the models containing a distinct block structure. All of that allowed us to develop efficient numerical methods for a steady-state solution of CTMC models. This allowed us to accelerate CPU time, which is necessary to solve CTMC models, ∼20 times. PMID:25705700

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

PubMed

Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

2015-07-28

High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

Novel all-optical logic gate using an add/drop filter and intensity switch.

PubMed

Threepak, T; Mitatha, S; Yupapin, P P

2011-12-01

A novel design of all-optical logic device is proposed. An all-optical logic device system composes of an optical intensity switch and add/drop filter. The intensity switch is formed to switch signal by using the relationship between refraction angle and signal intensity. In operation, two input signals are coupled into one with some coupling loss and attenuation, in which the combination of add/drop with intensity switch produces the optical logic gate. The advantage is that the proposed device can operate the high speed logic function. Moreover, it uses low power consumption. Furthermore, by using the extremely small component, this design can be put into a single chip. Finally, we have successfully produced the all-optical logic gate that can generate the accurate AND and NOT operation results.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

Improving off-state leakage characteristics for high voltage AlGaN/GaN-HFETs on Si substrates

NASA Astrophysics Data System (ADS)

Moon, Sung-Woon; Twynam, John; Lee, Jongsub; Seo, Deokwon; Jung, Sungdal; Choi, Hong Goo; Shim, Heejae; Yim, Jeong Soon; Roh, Sungwon D.

2014-06-01

We present a reliable process and design technique for realizing high voltage AlGaN/GaN hetero-junction field effect transistors (HFETs) on Si substrates with very low and stable off-state leakage current characteristics. In this work, we have investigated the effects of the surface passivation layer, prepared by low pressure chemical vapor deposition (LPCVD) of silicon nitride (SiNx), and gate bus isolation design on the off-state leakage characteristics of metal-oxide-semiconductor (MOS) gate structure-based GaN HFETs. The surface passivated devices with gate bus isolation fully surrounding the source and drain regions showed extremely low off-state leakage currents of less than 20 nA/mm at 600 V, with very small variation. These techniques were successfully applied to high-current devices with 80-mm gate width, yielding excellent off-state leakage characteristics within a drain voltage range 0-700 V.