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Sample records for relaxor ferroelectric behavior

  1. Unusual Relaxor Ferroelectric Behavior in Stairlike Aurivillius Phases.

    PubMed

    Steciuk, Gwladys; Boullay, Philippe; Pautrat, Alain; Barrier, Nicolas; Caignaert, Vincent; Palatinus, Lukas

    2016-09-01

    New ferroelectric layered materials were found in the pseudobinary system Bi5Nb3O15-ABi2Nb2O9 (A= Ba, Sr and Pb). Preliminary observations made by transmission electron microscopy indicate that these compounds exhibit a complex incommensurately modulated structure. A (3 + 1)D structural model is obtained using ab initio phasing by charge flipping based on the analysis of precession electron diffraction tomography data. The (3 + 1)D structure is further validated by a refinement against neutron powder diffraction. These materials possess a layered structure with discontinuous [Bi2O2] slabs and perovskite blocks. While these structural units are characteristics of Aurivillius phases, the existence of periodic crystallographic shear planes offers strong similarities with collapsed or stairlike structures known in high-Tc superconductors and related compounds. Using dielectric spectroscopy, we study the phase transitions of these new layered materials. For A = Ba and Sr, a Vögel-Fulcher-like behavior characteristic of the so-called relaxor ferroelectrics is observed and compared to "canonical" relaxors. For A = Sr, the absence of a Burns temperature separated from the freezing temperature appears as a rather unusual behavior. PMID:27525499

  2. Deviation from Curie-Weiss behavior in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Viehland, Dwight; Jang, S. J.; Cross, L. Eric; Wuttig, Manfred

    1992-10-01

    The deviation from Cure-Weiss behavior has been investigated in lead magnesium niobate relaxor ferroelectrics. At high temperatures, the susceptibility was found to follow the Curie-Weiss relationship. A Curie constant and temperature of 1.2×105 and 398 K, respectively, were obtained. With decreasing temperature the deviation was found to increase. It is proposed that this deviation arises due to short-range correlations between polar regions, and that these correlations at high temperatures are the precursor to a freezing of the polarization fluctuations into a glassy state. A local (glassy) order parameter was calculated from the susceptibility by analogy to spin glasses [D. Sherrington and S. Kirkpatrick, Phys. Rev. Lett. 35, 1972 (1975)]. These results are compared to the rms polarization [G. Burns and F. Dacol, Solid State Commun. 48, 853 (1983)] and to the measured remanent polarization. The frequency and field dependence has also been investigated.

  3. Dynamics of relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pirc, R.; Blinc, R.; Bobnar, V.

    2001-02-01

    We study a dynamic model of relaxor ferroelectrics based on the spherical random-bond-random-field model and the Langevin equations of motion written in the representation of eigenstates of the random interaction matrix. The solution to these equations is obtained in the long-time limit where the system reaches an equilibrium state in the presence of random local electric fields. The complex dynamic linear and third-order nonlinear susceptibilities χ1(ω) and χ3(ω), respectively, are calculated as functions of frequency and temperature. In analogy with the static case, the dynamic model predicts a narrow frequency dependent peak in χ3(T,ω), which mimics a transition into a glasslike state, but a real transition never occurs in the case of nonzero random fields. A freezing transition can be described by introducing the empirical Vogel-Fulcher (VF) behavior of the relaxation time τ in the equations of motion, with the VF temperature T0 playing the role of the freezing temperature Tf. The scaled third-order nonlinear susceptibility a'3(T,ω)=χ¯'3(ω)/χ¯'1(3ω)χ¯'1(ω)3, where the bar denotes a statistical average over T0, shows a crossover from paraelectriclike to glasslike behavior in the quasistatic regime above Tf. The shape of χ¯1(ω) and χ¯3(ω)-and thus of a'3(T,ω)-depends crucially on the probability distribution of τ. It is shown that for a linear distribution of VF temperatures T0, a'3(T,ω) has a peak near Tf and shows a strong frequency dispersion in the low-temperature region.

  4. Bismuth-induced ferroelectric relaxor behavior in paraelectric LaAlO3

    NASA Astrophysics Data System (ADS)

    Si, Mei-Ju; Hou, Yu-Dong; Ge, Hai-Yan; Zhu, Man-Kang; Yan, Hui

    2011-11-01

    Perovskite-type dense ceramics (La0.9Bi0.1)AlO3 (LBAO) have been prepared through a solid-state reaction route. LaAlO3 is indeed a paraelectric, whereas a significant ferroelectric relaxor behavior is obtained in LBAO. The variations of ferroelectric hysteresis loops versus the applied field or frequency indicate the nature of the ferroelectric domain switching. A broad dielectric anomaly coupled with the shift in dielectric maxima toward a higher temperature with increasing frequency has been observed in LBAO, and the indicator of degree of diffuseness γ is about 1.86. Moreover, the dielectric relaxation, which follows the Vogel-Fulcher relationship with TVF = 706.9 K, f0 = 1.85 × 109 Hz, and Ea = 0.09 eV, further supports spin-glass-like characteristics. Compared with LaAlO3, the abnormal contraction of crystal cell is observed in LBAO, which does not follow the normal Vegard's law. This can be attributed to the covalent hybridization of the Bi3+ ions with the surrounding O2- ions. The large local displacements at the off-centered Bi position lead to the formation of polarized nanoclusters in the paraelectric matrix and the reorientation of these unstable polarized nanoclusters further results in ferroelectric relaxor behavior.

  5. Multidimensional dynamic piezoresponse measurements. Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    DOE PAGESBeta

    Vasudevan, Rama K.; Zhang, Shujun; Okatan, Mahmut Baris; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

    2015-08-19

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. We use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias themore » average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. As a result, these studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.« less

  6. Multidimensional dynamic piezoresponse measurements. Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    SciTech Connect

    Vasudevan, Rama K.; Zhang, Shujun; Okatan, Mahmut Baris; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

    2015-08-19

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. We use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias the average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. As a result, these studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.

  7. Multidimensional dynamic piezoresponse measurements: Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    NASA Astrophysics Data System (ADS)

    Vasudevan, Rama K.; Zhang, Shujun; Baris Okatan, M.; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

    2015-08-01

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. Here, we use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias the average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. These studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.

  8. Relaxor behavior of ferroelectric Ca0.22Sr0.12Ba0.66Nb2O6

    NASA Astrophysics Data System (ADS)

    Shekhar Pandey, Chandra; Schreuer, Jürgen; Burianek, Manfred; Mühlberg, Manfred

    2013-01-01

    The relaxor behavior of tetragonal tungsten bronze uniaxial relaxor ferroelectric calcium strontium barium niobate (Ca0.22Sr0.12Ba0.66Nb2O6 or CSBN-22) single crystal was studied by measuring elastic constants and thermal expansion with the aid of resonant ultrasound spectroscopy and dilatometry, respectively, in the temperature range 300 K-1503 K. Thermal expansion yields evidence of the Burns temperature TB and the intermediate characteristic temperature T*, which was also supported by the temperature evolutions of the elastic constants cij. CSBN-22 was found to be ˜2%-3% elastically stiffer than CBN-28. The presented results open the perspective to understand the relaxor behavior of CSBN.

  9. Topological Point Defects in Relaxor Ferroelectrics.

    PubMed

    Nahas, Y; Prokhorenko, S; Kornev, I; Bellaiche, L

    2016-03-25

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics. PMID:27058101

  10. Topological Point Defects in Relaxor Ferroelectrics.

    PubMed

    Nahas, Y; Prokhorenko, S; Kornev, I; Bellaiche, L

    2016-03-25

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  11. Topological Point Defects in Relaxor Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nahas, Y.; Prokhorenko, S.; Kornev, I.; Bellaiche, L.

    2016-03-01

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba (Zr0.5 Ti0.5 )O3 (BZT) and Pb (Sc0.5 Nb0.5 )O3 (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  12. Coexistence of the relaxor-like and ferroelectric behavior in K1-xLixTaO3

    NASA Astrophysics Data System (ADS)

    Trybuła, Z.; Dec, J.; Miga, S.; Łoś, Sz.; Trybuła, M.

    2016-08-01

    The results of low-temperature linear and nonlinear susceptibilities, polarization measurements and the dc electric field dependence of the dielectric properties of the lithium-doped potassium tantalate K1-xLixTaO3, x = 0.034 (KLT-3.4%Li) solid solution are presented. The coexistence of the relaxor-like and ferroelectric behavior and different mechanisms leading to either of them are discussed. The observed ferroelectric phase transition is of the first-order type with temperature hysteresis. This transition is due to the off-center motions of Ta ions in the octahedral environment of oxygen ions. Clusters of Li+ ions produce a relaxor-like behavior and random electric field. This field reduces the depolarization field and allows off-center motions of Ta ions and an appearance of spontaneous polarization.

  13. Partially transformed relaxor ferroelectric single crystals with distributed phase transformation behavior

    NASA Astrophysics Data System (ADS)

    Gallagher, John A.

    2015-11-01

    Relaxor ferroelectric single crystals such as PMN-PT and PIN-PMN-PT undergo field driven phase transformations when electrically or mechanically loaded in crystallographic directions that provide a positive driving force for the transformation. The observed behavior in certain compositions is a phase transformation distributed over a range of fields without a distinct forward or reverse coercive field. This work focuses on the material behavior that is observed when the crystals are loaded sufficiently to drive a partial transformation and then unloaded, as might occur when driving a transducer to achieve high power levels. Distributed transformations have been modeled using a normal distribution of transformation thresholds. A set of experiments was conducted to characterize the hysteresis loops that occur with the partial transformations. In this work the normal distribution model is extended to include the partial transformations that occur when the field is reversed before the transformation is complete. The resulting hysteresis loops produced by the model are in good agreement with the experimental results.

  14. Multiscale dynamics in relaxor ferroelectrics

    SciTech Connect

    Toulouse, J.; Cai, L; Pattnaik, R. K.; Boatner, Lynn A

    2014-01-01

    The multiscale dynamics of complex oxides is illustrated by pairs of mechanical resonances that are excited in the relaxor ferroelectric K1 xLixTaO3 (KLT). These macroscopic resonances are shown to originate in the collective dynamics of piezoelectric polar nanodomains (PND) interacting with the surrounding lattice. Their characteristic Fano lineshapes and rapid evolution with temperature reveal the coherent interplay between the piezoelectric oscillations and orientational relaxations of the PNDs at higher temperature and the contribution of heterophase oscillations near the phase transition. A theoretical model is presented, that describes the evolution of the resonances over the entire temperature range. Similar resonances are observed in other relaxors and must therefore be a common characteristics of these systems.

  15. Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

    SciTech Connect

    Gallagher, John A.; Lynch, Christopher S.; Tian, Jian

    2014-08-04

    The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

  16. Phonon localization drives polar nanoregions in a relaxor ferroelectric

    SciTech Connect

    Manley, Michael E; Lynn, Jeffrey; Specht, Eliot D; Delaire, Olivier A; Bishop, Alan; Sahul, Raffi; Budai, John D

    2014-01-01

    Relaxor ferroelectrics1, which are utilized as actuators and sensors2-4, exemplify a class of poorly understood materials where interplay between disorder and phase instability results in inhomogeneous nanoregions. There is no definitive explanation for the onset of relaxor behavior (Burns temperature5, Td) or the origin of polar nanoregions (PNRs). Here we show a vibrational mode that localizes on cooling to Td, remains localized as PNRs form, and then delocalizes as PNRs grow using neutron scattering on relaxor (Pb(Mg1/3Nb2/3)O3)0.69-(PbTiO3)0.31 (PMN-31%PT). Although initially appearing like intrinsic local modes (ILMs)6-10, these modes differ below Td as they form a resonance with the ferroelectric phonon. At the resonance, nanoregions of standing ferroelectric phonons develop with a coherence length matching the PNRs. The size, shape, distribution, and temporal fluctuations of PNRs, and our observations, are explained by ferroelectric phonons trapped by disordered resonance modes via Anderson localization11-13. Our results show the size and shape of PNRs are not dictated by complex structural details, as always assumed, but by a phonon resonance wavevector. This simplification could guide the design of next generation relaxors.

  17. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  18. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    PubMed Central

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  19. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

    PubMed

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  20. High-resolution 2-D Bragg diffraction reveal heterogeneous domain transformation behavior in a bulk relaxor ferroelectric

    DOE PAGESBeta

    Pramanick, Abhijit; Stoica, Alexandru D.; An, Ke

    2016-09-02

    In-situ measurement of fine-structure of neutron Bragg diffraction peaks from a relaxor single-crystal using a time-of-flight instrument reveals highly heterogeneous mesoscale domain transformation behavior under applied electric fields. We observed that only 25% of domains undergo reorienta- tion or phase transition contributing to large average strains, while at least 40% remain invariant and exhibit microstrains. Such insights could be central for designing new relaxor materials with better performance and longevity. The current experimental technique can also be applied to resolve com- plex mesoscale phenomena in other functional materials.

  1. Broadband dielectric response of Ba(Zr,Ti)O3 ceramics: From incipient via relaxor and diffuse up to classical ferroelectric behavior

    NASA Astrophysics Data System (ADS)

    Nuzhnyy, D.; Petzelt, J.; Savinov, M.; Ostapchuk, T.; Bovtun, V.; Kempa, M.; Hlinka, J.; Buscaglia, V.; Buscaglia, M. T.; Nanni, P.

    2012-07-01

    Dielectric responses of ceramics from the lead-free isovalent BaZrO3-BaTiO3 (BZT) system were investigated from Hz frequencies up to the infrared in a broad temperature range, 10-700 K. Pure BaZrO3 is a displacive weak-incipient ferroelectric with a simple cubic perovskite structure down to low temperatures, whose dielectric response is fully determined by polar phonons, the lowest-frequency one being of the Last type, unlike BaTiO3, where it is of the Slater type. BaZr0.4Ti0.6O3 is a relaxor ferroelectric whose dielectric anomaly is caused by a strong, overdamped excitation, which softens from the THz down to MHz range according to the Arrhenius law and merges into a constant-loss background at low temperatures. Such a reponse is similar to lead-containing and heterovalent relaxors, but unlike them, the lowest-frequency TO1 polar phonon does not soften appreciably. In the case of BaZr0.2Ti0.8O3 we have investigated the dynamic response connected with a diffuse ferroelectric phase transition. The main dielectric anomaly is again due to similar overdamped THz-microwave excitation, which, however, softens only to the GHz range near the transition temperature and below it merges with a near-constant-loss background. The picture of polar nanoregions in BZT differs from that in heterovalent relaxors, because they are pinned to the regions of the off-centered Ti4+ ions, which are frozen in our temperature range. Therefore we assign the soft relaxations to hopping of the off-centered Ti4+ ions. This is compared with the behavior of pure BaTiO3 ceramics, in which the hopping of the off-centered Ti4+ ions also substantially contributes to the phase transition dynamics. Unlike BaTiO3, the dynamic instability, which is responsible for the diffuse ferroelectric and relaxor behavior in BZT, is fully due to the hopping dynamics of the off-centered Ti4+ ions rather than due to soft phonons, and therefore the diffuse transition is of the order-disorder type.

  2. Pressure as a Probe of the Physics of Relaxor Ferroelectrics

    SciTech Connect

    Samara, George A.

    1999-08-09

    Pressure studies have provided new insights into the physics of compositionally-disordered ABO{sub 3} oxide relaxors. Specifically results are presented and discussed on a pressure-induced ferroelectric-to-relaxor crossover phenomenon, the continuous evolution of the energetics and dynamics of the relaxation process, and the interplay between pressure and electric field in determining the dielectric response.

  3. Freezing in relaxor ferroelectrics and dipolar glasses

    NASA Astrophysics Data System (ADS)

    Pirc, Raša; Kutnjak, Zdravko

    2015-03-01

    A recently proposed semi-phenomenological model of freezing in relaxor ferroelectrics, based on the concept of polar nanoregions (PNRs) embedded in a polarizable medium, is reviewed. A generalized Landau-type free energy for the medium is discussed, where the medium polarization couples linearly to the PNR polarization. When the fourth-order Landau coefficient is negative (b < 0), the correlation radius rc, which measures the PNR size, depends on the temperature T and the applied field E. As T is lowered or E increased, rc increases and the volume of a cluster of PNRs grows until the percolation limit is reached. This leads to a generalized expression for the Vogel-Fulcher (VF) relaxation time with a field-dependent VF freezing temperature T0(E). The case b > 0, in which the percolation mechanism cannot be realized, is considered to be appropriate for dipolar glasses.

  4. Anomalous elastic behavior of relaxor ferroelectric Ca0.28Ba0.72Nb2O6 single crystals

    NASA Astrophysics Data System (ADS)

    Pandey, Chandra Shekhar; Schreuer, Jürgen; Burianek, Manfred; Mühlberg, Manfred

    2011-11-01

    Full sets of elastic constants cij of tetragonal tungsten bronze relaxor ferroelectric Ca0.28Ba0.72Nb2O6 (CBN-28) single crystals are measured above Curie temperature up to 1503 K employing resonant ultrasound spectroscopy. Thermal expansion measurements on as-grown unpoled CBN-28 reveal the existence of a characteristic temperature T * (˜800 K) for CBN-28 between the Burns temperature Tb (˜1100 K) and the temperature of maximum dielectric permittivity Tm (˜600 K). The influence of polar nanoregions (PNRs) on the elastic properties of CBN-28 is studied in detail. The temperature evolution of cij shows pronounced anomalies. All independent elastic constants evolved differently, with temperature reflecting their coupling to different types of the reorientational motion of PNRs through their interaction with acoustic waves. The anisotropy of longitudinal elastic stiffness coefficients and the deviation from Cauchy relations for CBN-28 are also studied, showing the evolution of material anisotropy and the nature of bonding interactions with temperature, respectively.

  5. A brief review on relaxor ferroelectrics and selected issues in lead-free relaxors

    NASA Astrophysics Data System (ADS)

    Ahn, Chang Won; Hong, Chang-Hyo; Choi, Byung-Yul; Kim, Hwang-Pill; Han, Hyoung-Su; Hwang, Younghun; Jo, Wook; Wang, Ke; Li, Jing-Feng; Lee, Jae-Shin; Kim, Ill Won

    2016-06-01

    Relaxor ferroelectricity is one of the most widely investigated but the least understood material classes in the condensed matter physics. This is largely due to the lack of experimental tools that decisively confirm the existing theoretical models. In spite of the diversity in the models, they share the core idea that the observed features in relaxors are closely related to localized chemical heterogeneity. Given this, this review attempts to overview the existing models of importance chronologically, from the diffuse phase transition model to the random-field model and to show how the core idea has been reflected in them to better shape our insight into the nature of relaxor-related phenomena. Then, the discussion will be directed to how the models of a common consensus, developed with the so-called canonical relaxors such as Pb(Mg1/3Nb2/3)O3 (PMN) and (Pb, La)(Zr, Ti)O3 (PLZT), are compatible with phenomenological explanations for the recently identified relaxors such as (Bi1/2Na1/2)TiO3 (BNT)-based lead-free ferroelectrics. This review will be finalized with a discussion on the theoretical aspects of recently introduced 0-3 and 2-2 ferroelectric/relaxor composites as a practical tool for strain engineering.

  6. Multinuclear NMR studies of relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Zhou, Donghua

    Multinuclear NMR of 93Nb, 45Sc, and 207Pb has been carried out to study the structure, disorder, and dynamics of a series of important solid solutions: perovskite relaxor ferroelectric materials (1-x) Pb(Mg1/3Nb 2/3)O3-x Pb(Sc1/2Nb1/2)O 3 (PMN-PSN). 93Nb NMR investigations of the local structure and cation order/disorder are presented as a function of PSN concentration, x. The superb fidelity and accuracy of 3QMAS allows us to make clear and consistent assignments of spectral intensities to the 28 possible nearest B-site neighbor (nBn) configurations, (NMg, NSc, NNb), where each number ranges from 0 to 6 and their sum is 6. For most of the 28 possible nBn configurations, isotropic chemical shifts and quadrupole product constants have been extracted from the data. The seven configurations with only larger cations, Mg 2+ and Sc3+ (and no Nb5+) are assigned to the seven observed narrow peaks, whose deconvoluted intensities facilitate quantitative evaluation of, and differentiation between, different models of B-site (chemical) disorder. The "completely random" model is ruled out and the "random site" model is shown to be in qualitative agreement with the NMR experiments. To obtain quantitative agreement with observed NMR intensities, the random site model is slightly modified by including unlike-pair interaction energies. To date, 45Sc studies have not been as fruitful as 93Nb NMR because the resolution is lower in the 45Sc spectra. The lower resolution of 45Sc spectra is due to a smaller span of isotropic chemical shift (40 ppm for 45Sc vs. 82 ppm for 93Nb) and to the lack of a fortuitous mechanism that simplifies the 93Nb spectra; for 93Nb the overlap of the isotropic chemical shifts of 6-Sc and 6-Nb configurations results in the alignment of all the 28 configurations along only seven quadrupole distribution axes. Finally we present variable temperature 207Pb static, MAS, and 2D-PASS NMR studies. Strong linear correlations between isotropic and anisotropic chemical

  7. Computational Study of Local Structure and Dynamics in a Relaxor Ferroelectric

    NASA Astrophysics Data System (ADS)

    Takenaka, Hiroyuki

    2014-03-01

    Relaxor ferroelectrics exhibit a stronger piezoelectric effect, diffuse phase transitions with high permittivity, and unique dielectric response with strong frequency dispersion which are exploited for technological applications and give rise to scientific interest. The diffuse phase transitions have been explained by widely accepted model of polar nanoregions inside a non-polar matrix. Recent experimental and theoretical results, however, suggest requirements of alternate interpretations of the origin of the relaxor behavior. Macroscopic elucidations of structure and dynamics in relaxors are still one of challenging topics in solid-state physics. We analyzed local structure and dynamics with dynamic pair distribution function and diffuse scattering techniques for 0.75PbMg1/3Nb2/3O3-0.25PbTiO3, a prototypical relaxor, performing molecular dynamics simulations. Our analysis showed phase transition temperatures in good agreement with experimental values. From inspections of in-phase motion correlations for Pb pairs, we found analogy between the phase transition from the paraelectric phase to the relaxor phase in the relaxor and the behavior of the couplings from high temperature to room temperature in water. We, therefore, propose alternate model. This work was supported by the Department of Energy under grant DE-FG02-07ER46431.

  8. Mesoscopic cell structure of relaxor ferroelectrics at morphotropic phase boundary

    NASA Astrophysics Data System (ADS)

    Ahn, Sang-Jin; Kim, Jong-Jean

    2003-03-01

    Mesoscopic cell structure of relaxor ferroelectrics at morphotropic phase boundary Sang-Jin Ahn and Jong-Jean Kim Physics Department, KAIST, Taejon 305-701, Korea Relaxor-based ferroelectrics such as PZN-xPT and PMN-xPT have drawn a great attention due to an observation of a huge piezoelectric coefficient and an ultra high strain level. Although the first principle calculations on the basis of a single perovskite unit cell structure could explain much of the experimental observations, recent observations of a complex mesoscopic ordering and a heterogeneous domain structure suggest a composite cell of many perovskite units as a basic building block. Raman scattering spectra and observed stoichiometry of PZN-xPT and PMN-xPT allow for only a random pile-up structure of the composite block cells. Our composite block cell needs 27 perovskite unit cells to satisfy the morphotropic phase boundary conditions of structural and compositional variations. Using this mesoscopic block cell model we calculate for allowed mixing concentrations x at morphotropic phase boundaries of relaxor ferroelectrics, which agree with observed values.

  9. Electric-field dependent freezing in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pirc, R.; Kutnjak, Z.

    2014-05-01

    The concept of polar nanoregions (PNRs) in relaxor ferroelectrics has recently been discussed in several numerical and theoretical studies for the special case of barium zirconate-titanate Ba(ZrxTi1-x)O3 (BZT). Here we present a semiphenomenological model of relaxation in BZT and related systems in order to show that the correlation radius of a PNR is determined by the condition that the surrounding medium undergoes a local phase transformation into a correlated polar state. The model describes the growth and percolation of the PNRs on lowering the temperature or under the application of an electric field, leading to a generalized Vogel-Fulcher-type dielectric relaxation time. It is suggested that the above condition might be applied to discriminate between the relaxor state and the analogous dipolar glass state.

  10. Phenomenological theory of uniaxial relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Shirokov, V. B.; Pavlenko, A. V.; Yuzyuk, Yu I.

    2016-10-01

    A phenomenological thermodynamic theory of uniaxial relaxor strontium barium niobate \\text{B}{{\\text{a}}0.5}\\text{S}{{\\text{r}}0.5}\\text{N}{{\\text{b}}2}{{\\text{O}}6} is developed using the Landau-Devonshire approach with two order parameters. The fourth-order thermodynamic potential allowed to explain the shape of the polarization hysteresis loops experimentally observed at different temperatures. We show that the broad maximum of the dielectric permittivity is not related to the phase transition and arise due to the coupling between polarization and true order parameter which has antiferroelectric nature. We found that the phase transition temperature is much higher than the maximum of the dielectric permittivity and very likely corresponds to so-called Burn’s temperature. True order parameter has no simple relation with polar modes.

  11. Phenomenological theory of uniaxial relaxor ferroelectrics.

    PubMed

    Shirokov, V B; Pavlenko, A V; Yuzyuk, Yu I

    2016-10-01

    A phenomenological thermodynamic theory of uniaxial relaxor strontium barium niobate [Formula: see text] is developed using the Landau-Devonshire approach with two order parameters. The fourth-order thermodynamic potential allowed to explain the shape of the polarization hysteresis loops experimentally observed at different temperatures. We show that the broad maximum of the dielectric permittivity is not related to the phase transition and arise due to the coupling between polarization and true order parameter which has antiferroelectric nature. We found that the phase transition temperature is much higher than the maximum of the dielectric permittivity and very likely corresponds to so-called Burn's temperature. True order parameter has no simple relation with polar modes. PMID:27485244

  12. Relaxor Ferroelectrics: Back to the Single-Soft-Mode Picture

    NASA Astrophysics Data System (ADS)

    Hehlen, B.; Al-Sabbagh, M.; Al-Zein, A.; Hlinka, J.

    2016-10-01

    The fluctuations of electric polarization in a disordered ferroelectric substance, relaxor crystal PbMg1 /3Nb2 /3O3 (PMN), were studied using a nonlinear inelastic light-scattering technique, hyper-Raman scattering, within a 5 - 100 cm-1 spectral interval and in a broad temperature range from 20 to 900 K. The split ferroelectric mode reveals a local anisotropy of up to about 400 K. Spectral anomalies observed at higher temperatures are explained as due to avoided crossing of the single primary polar soft mode with a temperature-independent, nonpolar spectral feature near 45 cm-1 , known from Raman scattering. The temperature changes of the vibrational modes involved in the measured fluctuation spectra of PMN were captured in a simple model that accounts for the temperature dependence of the dielectric permittivity as well. The observed slowing down of the relaxational dynamics directly correlates with the huge increase of the dielectric permittivity.

  13. Giant strain in lead-free relaxor/ferroelectric piezocomposite ceramics

    NASA Astrophysics Data System (ADS)

    Dinh, Thi Hinh; Kang, Jin-Kyu; Nguyen, Hoang Thien Khoi; Duong, Trang An; Lee, Jae-Shin; Tran, Vu Diem Ngoc; Pham, Ky Nam

    2016-06-01

    The crystal structural, ferroelectric, and electric-field-induced-strain (EFIS) properties of leadfree relaxor/ferroelectric piezocomposites were investigated. The relaxor-matrix phases were mixed with the ferroelectric-seed phases by using a conventional ceramic processing route. The addition of the ferroelectric seed phase dramatically enhanced the EFIS of the relaxor matrix phase at low electric fields. Giant strains of 745 pm/V at 4 kV/mm and 466 pm/V at 3 kV/mm were obtained when the seed contents were 30 wt% and 50 wt%, respectively, which are much higher than those of the relaxor matrix phase without ferroelectric seeds (575 pm/V at 4 kV/mm and 327 pm/V at 3 kV/mm).

  14. Development of “fragility” in relaxor ferroelectrics

    SciTech Connect

    Wang, Yi-zhen; Chen, Lan; Xiong, Xiao-min; Zhang, Jin-xiu; Wang, Hai-yan; Frank Zhang, X.; Fu, Jun

    2014-02-07

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the “Super-Arrhenius (SA)” relaxation. Despite great progress in glass-forming liquids, the “fragility” property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-x%PbTiO{sub 3} (PMN − x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the “fragility” properties of the SA relaxation in PMN − x%PT. Such fascinating issues as the mechanism of the “fragility” at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between “fragility” and ferroelectric order are investigated. Our results show that both the “fragility” of the temperature-dependent SA relaxation and ferroelectric order in the PMN − x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature T{sub c}. A reasonable physical scenario, based on our “configurational-entropy-loss” theory and Nowick's “stress-induced-ordering” theory, was proposed.

  15. Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review

    PubMed Central

    Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

    2014-01-01

    Relaxor-PbTiO3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients (d33 > 1500 pC/N) and electromechanical coupling factors (k33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials’ behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor

  16. Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Li, F.; Chen, L.-Q.; Schlom, D. G.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

    2016-03-01

    The dielectric phase transition behavior of imprinted lead magnesium niobate-lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

  17. Characterizing new compositions of [001]C relaxor ferroelectric single crystals using a work-energy model

    NASA Astrophysics Data System (ADS)

    Gallagher, John A.

    2016-04-01

    The desired operating range of ferroelectric materials with compositions near the morphotropic phase boundary is limited by field induced phase transformations. In [001]C cut and poled relaxor ferroelectric single crystals the mechanically driven ferroelectric rhombohedral to ferroelectric orthorhombic phase transformation is hindered by antagonistic electrical loading. Instability around the phase transformation makes the current experimental technique for characterization of the large field behavior very time consuming. Characterization requires specialized equipment and involves an extensive set of measurements under combined electrical, mechanical, and thermal loads. In this work a mechanism-based model is combined with a more limited set of experiments to obtain the same results. The model utilizes a work-energy criterion that calculates the mechanical work required to induce the transformation and the required electrical work that is removed to reverse the transformation. This is done by defining energy barriers to the transformation. The results of the combined experiment and modeling approach are compared to the fully experimental approach and error is discussed. The model shows excellent predictive capability and is used to substantially reduce the total number of experiments required for characterization. This decreases the time and resources required for characterization of new compositions.

  18. First-principles-based effective Hamiltonian simulations of bulks and films made of lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics.

    PubMed

    Prosandeev, Sergey; Wang, Dawei; Akbarzadeh, A R; Bellaiche, L

    2015-06-10

    A review of the recent development and application of a first-principles-derived effective Hamiltonian technique to the study of lead-free Ba(Zr,Ti)O3 (BZT) relaxor ferroelectrics is provided. In addition to the computation and analysis of macroscopic properties (such as different types of dielectric responses and electric polarization) and their connections to previous published works, particular emphasis is given to microscopic insights arising from this atomistic technique. These include (i) the numerically-found determination of the physical origin of the relaxor behavior in BZT; and (ii) the prediction of polar nanoregions and the evolution of their morphology as a response to temperature, electric fields and epitaxial misfit strain. Other striking phenomena that were predicted in BZT compounds, such as Fano resonance and field-driven percolation, are also documented and discussed. Finally, a brief perspective of possible remaining computational studies to be conducted in relaxor ferroelectrics, in order to further understand them, is attempted.

  19. First-principles-based effective Hamiltonian simulations of bulks and films made of lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Prosandeev, Sergey; Wang, Dawei; Akbarzadeh, A. R.; Bellaiche, L.

    2015-06-01

    A review of the recent development and application of a first-principles-derived effective Hamiltonian technique to the study of lead-free Ba(Zr,Ti)O3 (BZT) relaxor ferroelectrics is provided. In addition to the computation and analysis of macroscopic properties (such as different types of dielectric responses and electric polarization) and their connections to previous published works, particular emphasis is given to microscopic insights arising from this atomistic technique. These include (i) the numerically-found determination of the physical origin of the relaxor behavior in BZT; and (ii) the prediction of polar nanoregions and the evolution of their morphology as a response to temperature, electric fields and epitaxial misfit strain. Other striking phenomena that were predicted in BZT compounds, such as Fano resonance and field-driven percolation, are also documented and discussed. Finally, a brief perspective of possible remaining computational studies to be conducted in relaxor ferroelectrics, in order to further understand them, is attempted.

  20. Temperature-dependent reversible and irreversible processes in Nb-doped PbZrO3 relaxor ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Ye, Mao; Huang, Haitao; Li, Tao; Ke, Shanming; Lin, Peng; Peng, Biaolin; Mai, Manfang; Sun, Qiu; Peng, Xiang; Zeng, Xierong

    2015-11-01

    The dielectric and ferroelectric nonlinearity of Nb-doped PbZrO3 relaxor ferroelectric thin films was investigated. The ac field dependence of the permittivity of relaxor ferroelectric thin films is demonstrated to be described by a Rayleigh type relation. Both reversible and irreversible components of dielectric permittivity decrease linearly with the logarithm of the frequency of the ac field. The irreversible Rayleigh coefficient α'(T) shows a peak around the "freezing temperature" Tf, which is probably according to the transition from polar nano-regions (PNRs) to dipole-glass state in relaxor ferroelectrics. The results demonstrate that the models describing the interaction of domain walls and randomly distributed pinning centers in ferroelectric materials can be extended to the displacement of nanoscale walls in relaxors.

  1. Ferroelectric-to-Relaxor Crossover and Oxygen Vacancy Hopping in Compositionally-Disordered Perovskites - KtA(1-x)Nb(x)O(3):Ca

    SciTech Connect

    Samara, G.A.; Boatner, L.A.

    1999-07-26

    It is shown that lattice disorder induced by Nb and Ca substitution has a strong influence on the dielectric and relaxational properties of KTaO{sub 3}. Both substituents are believed to occupy off-center positions at the Ta site, and the difference in valence between the Ca{sup 2+} and Ta{sup 5+} ions leads to the formation of oxygen vacancies (V{sub 0}). Specifically, for a KTa{sub 1{minus}x}Nb{sub x}O{sub 3}:Ca crystal with x = 0.023 and with a 0.055 at.% Ca doping they observe: (1) a ferroelectric transition at atmospheric pressure (1 bar); (2) a large enhancement of the transition temperature by Ca doping; (3) a pressure-induced crossover from ferroelectric-to-relaxor behavior; (4) the impending vanishing of the relaxor phase at high pressure; (5) the reorientation of the Ca-oxygen vacancy (Ca:V{sub 0}) pair defect; and (6) the variation of the energetics and dynamics of this reorientation with pressure. Most of these effects are associated with Nb- and Ca-induced dipolar entities and appear to be general features of soft mode ferroelectrics with random-site polar nanodomains. The ferroelectric-to-relaxor crossover can be understood in terms of a large decrease with pressure in the correlation length among polar nanodomains--a unique property of soft ferroelectric mode systems.

  2. Evaluation of field enforced antiferroelectric to ferroelectric phase transition dielectrics and relaxor ferroelectrics for pulse discharge capacitors

    SciTech Connect

    Hoover, B.D.; Tuttle, B.A.; Olson, W.R.; Goy, D.M.; Brooks, R.A.; King, C.F.

    1997-09-01

    Discharge capacitors were designed based on materials with antiferroelectric (AFE) to ferroelectric (FE) field enforced transitions that had 10 times the capacitance of relaxor ferroelectric or state of the art BaTiO{sub 3} materials in the voltage range of interest. Nonlinear RLC circuit analysis was used to show that the AFE to FE materials have potentially more than 2 times the peak discharge current density capability of the BaTiO{sub 3} or lead magnesium niobate (PMN) based relaxor materials. Both lead lanthanum zirconium tin titanate (PLZST) AFE to FE field enforced phase transition materials and PMN based relaxor materials were fabricated and characterized for Sandia`s pulse discharge capacitor applications. An outstanding feature of the PLZST materials is that there are high field regimes where the dielectric constant increases substantially, by a factor of 20 or more, with applied field. Specifically, these materials have a low field dielectric constant of 1,000, but an effective dielectric constant of 23,000 in the electric field range corresponding to the FE to AFE transition during discharge. Lead magnesium niobate (PMN) based relaxor materials were also investigated in this project because of their high dielectric constants. While the PMN based ceramics had a low field dielectric constant of 25,000, at a field corresponding to half the charging voltage, approximately 13 kV/cm, the dielectric constant decreases to approximately 7,500.

  3. Electronic characterization of polar nanoregions in relaxor-type ferroelectric NaNbO3 films

    NASA Astrophysics Data System (ADS)

    Cai, Biya; Schwarzkopf, J.; Hollmann, E.; Braun, D.; Schmidbauer, M.; Grellmann, T.; Wördenweber, R.

    2016-06-01

    Strained NaNbO3 films of different thicknesses are epitaxially grown on (110) NdGaO3 substrates. A detailed analysis of the permittivity of these films demonstrates that strain not only leads to a modification of the permittivity and the ferroelectric transition temperature, it also results in a pronounced relaxor-type behavior and allows a direct estimation of the size and mobility of the polar nanoregions (PNRs). The compressive strain reduces the transition temperature to 125 K and enhances the corresponding permittivity up to ɛ'≈1500 for the thinnest film. Since the strain relaxes with increasing film thickness, both effects, reduction of phase transition temperature and enhancement of ɛ', depend on the thickness of the film. The films show a characteristic frequency and electric field dependence of ɛ', which is discussed in terms of the Vogel-Fulcher equation and Rayleigh law, respectively. Using the electric field dependence of the resulting freezing temperature TVF, allows a direct estimation of the volume of the PNRs at the freezing temperature, i.e. from 70 to 270 n m3 . Assuming an idealized spherical shape of the PNRs, diameters of a few nanometers (5.2-8 nm) are determined that depend on the applied ac electric field. The irreversible part of the polarization seems to be dominated by the presence and mobility of the PNRs. It shows a characteristic peak at low temperature around TVF, vanishes at a temperature where the activation energy of the PRNs extrapolates to zero, and shows a frequency dispersion that is characteristic for relaxor-type behavior.

  4. Electric-field-induced local structural phenomena in Pb-based ABO3-type relaxor ferroelectrics.

    PubMed

    Mihailova, Boriana; Maier, Bernd J; Steilmann, Thomas; Dul'kin, Evgeniy; Roth, Michael

    2015-01-01

    Lead-based ABO3-type relaxors and related systems have numerous applications in modern technical devices because of their remarkably high dielectric permittivity and piezoelectric/electroelastic and electro-optic coefficients. However, lead is not desired from an environmental point of view, and to switch to alternative alkali-, Ba-, or Bi-based relaxor systems, one must understand in great detail the structural mesoscopic order and coupling processes responsible for the outstanding performance and multifunctionality of the exemplar Pb-based compounds. To elucidate the type of ferroic coupling, three relaxor compounds PbSc0.5Ta0.5O3 (PST), Pb0.78Ba0.22Sc0.5Ta0.5O3 (PST-Ba), and PbSc0.5Nb0.5O3 (PSN), were studied by polarized Raman scattering and acoustic emission at different temperatures and under an external electric field. The results reveal the coexistence of mesoscopic-scale ferroelectric and antiferroelectric coupling, which are predominantly related to B-site cations and A-site Pb cations, respectively. This suggests that the polar structural state of relaxors is frustrated ferrielectric. The presence of A-site cations with affinity to off-center is significant for the development of mesoscopic-scale antiferroelectric order coexisting with the mesoscopic-scale ferroelectric order. PMID:25585386

  5. BaZr0.5Ti0.5O3 : Lead-free relaxor ferroelectric or dipolar glass

    NASA Astrophysics Data System (ADS)

    Filipič, C.; Kutnjak, Z.; Pirc, R.; Canu, G.; Petzelt, J.

    2016-06-01

    Glassy freezing dynamics was investigated in BaZr0.5Ti0.5O3 (BZT50) ceramic samples by means of dielectric spectroscopy in the frequency range 0.001 Hz-1 MHz at temperatures 10 ferroelectric state cannot be induced, in contrast to the case of typical relaxors. This suggests that—at least for the above field amplitudes—BZT50 effectively behaves as a dipolar glass, which can be characterized by a negative value of the static third order nonlinear permittivity. The relaxation spectrum has been analyzed by means of the frequency-temperature plot, which shows that the longest relaxation time obeys the Vogel-Fulcher relation τ =τ0exp [E0/(T -T0) ] with the freezing temperature of 48.1 K, whereas the corresponding value for the shortest relaxation time is ˜0 K, implying an Arrhenius type behavior. By applying a standard expression for the static linear permittivity of dipolar glasses and/or relaxors the value of the Edwards-Anderson order parameter q (T ) has been evaluated. It is further shown that q (T ) can be described by the spherical random bond-random field model of relaxors.

  6. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    PubMed Central

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; Parshall, Daniel E.; Lynn, Jeffrey W.; Christianson, Andrew D.; Stonaha, Paul J.; Specht, Eliot D.; Budai, John D.

    2016-01-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarization rotations in relaxor-based ferroelectric PMN-xPT {(1 − x)[Pb(Mg1/3Nb2/3)O3] – xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening. PMID:27652338

  7. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    DOE PAGESBeta

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; Parshall, Daniel E.; Lynn, Jeffrey W.; Christianson, Andrew D.; Stonaha, Paul J.; Specht, Eliot D.; Budai, John D.

    2016-09-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarizationmore » rotations in relaxor-based ferroelectric PMN-xPT {(1 x)[Pb(Mg1/3Nb2/3)O3] xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening.« less

  8. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations.

    PubMed

    Manley, Michael E; Abernathy, Douglas L; Sahul, Raffi; Parshall, Daniel E; Lynn, Jeffrey W; Christianson, Andrew D; Stonaha, Paul J; Specht, Eliot D; Budai, John D

    2016-09-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarization rotations in relaxor-based ferroelectric PMN-xPT {(1 - x)[Pb(Mg1/3Nb2/3)O3] - xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening. PMID:27652338

  9. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    PubMed Central

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; Parshall, Daniel E.; Lynn, Jeffrey W.; Christianson, Andrew D.; Stonaha, Paul J.; Specht, Eliot D.; Budai, John D.

    2016-01-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarization rotations in relaxor-based ferroelectric PMN-xPT {(1 − x)[Pb(Mg1/3Nb2/3)O3] – xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening.

  10. Order parameter and scaling behavior in BaZr{sub x}Ti{sub 1−x}O{sub 3} (0.3 < x < 0.6) relaxor ferroelectrics

    SciTech Connect

    Usman, Muhammad; Mumtaz, Arif Raoof, Sobia; Hasanain, S. K.

    2013-12-23

    We report the relaxor behavior of the zirconium doped barium titanate BaZr{sub x}Ti{sub 1−x}O{sub 3} solid solutions and discuss the temperature, frequency, and concentration dependence in terms of correlations among the polar nanoregions. The relaxor behavior is analyzed within the mean field theory by estimating the Edward-Anderson order parameter q{sub EA}. Additionally, we find that q{sub EA} calculated for the different concentrations obeys a scaling behavior q{sub EA}=1−(T/T{sub m}){sup n}, where T{sub m} are the respective dielectric maxima temperatures and n = 2.0 ± 0.1. The frequency dependence of the q{sub EA} also shows results consistent with the above mentioned picture.

  11. Energy-storage properties and high-temperature dielectric relaxation behaviors of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Zhang, T. F.; Tang, X. G.; Liu, Q. X.; Jiang, Y. P.; Huang, X. X.; Zhou, Q. F.

    2016-03-01

    (1  -  x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x  =  0, 5, and 10 mol%) ceramics were prepared using a conventional mixed oxide solid state reaction method. The low-temperature relaxor behavior of (1  -  x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 ceramics were examined in the temperature range from 120 to 523 K. A broad dielectric maximum that shifted to higher temperatures with increasing frequency, signified the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ  =  1.61-1.94 estimated from the linear fit of the modified Curie-Weiss law indicated the relaxor nature. High-temperature dielectric relaxation phenomena were found in the temperature region 600-850 K. Energy-storage properties were also analyzed, and the energy-storage density calculated from hysteresis loops reached about 0.47 J cm-3 at room temperature.

  12. Rhombohedral-to-tetragonal phase transformation and thermal depolarization in relaxor-based ferroelectric single crystal

    NASA Astrophysics Data System (ADS)

    Chang, W. S.; Lim, L. C.; Yang, P.; Tu, C.-S.

    2008-08-01

    The rhombohedral-to-tetragonal (R-T) transformation in relaxor single crystals occurs over a temperature range, manifested by the coexistence of rhombohedral (R ) and tetragonal (T) microscopic and nanotwin domains, a string of thermal current signals, and continued degradation of dielectric and electromechanical properties. Thermal current and high-resolution x-ray diffraction results suggest TRT≅100-135 °C for [001]-poled PZN-4.5%PT and 90-115 °C for [001]-poled PZN-7%PT. The "TRT" determined from the dielectric permittivity-temperature plot of poled crystals corresponds to the lower bound of TRT, which is also a good indication of the depolarization temperature (TDP) of relaxor ferroelectric single crystals above which perceptible property degradation begins.

  13. Frustration of ferroelectricity in epitaxial film of relaxor ferroelectric PbSc1/2Nb1/2O3.

    PubMed

    Tyunina, M; Pintilie, I; Iuga, A; Stratulat, M S; Pintilie, L

    2014-08-13

    Relaxor-to-ferroelectric transformations induced by varying electric fields and temperatures are studied experimentally in acube-on-cubetype epitaxial PbSc(1/2)Nb(1/2)O3 film grown on La(1/2)Sr(1/2)CoO3/MgO(001). Dielectric response, quasi-static and dynamic polarization, and dynamic current-voltage characteristics evidence the absence of spontaneous relaxor-to-ferroelectric transition. The electricfield-induced transformation from a glass-like relaxor state to a new dynamic polar state is detected at low temperatures below 100 K only. The frustration of ferroelectricity is discussed in relation to orientational anisotropy of the dipolar system in the epitaxial (001) film.

  14. Pressure as a probe of the physics of ABO{sub 3} relaxor ferroelectrics

    SciTech Connect

    SAMARA,GEORGE A.

    2000-02-14

    Results on a variety of mixed ABO{sub 3} oxides have revealed a pressure-induced ferroelectric-to-relaxor crossover and the continuous evolution of the energetics and dynamics of the relaxation process with increasing pressure. These common features have suggested a mechanism for the crossover phenomenon in terms of a large decrease in the correlation length for dipolar interactions with pressure--a unique property of soft mode or highly polarizable host lattices. The pressure effects as well as the interplay between pressure and dc biasing fields are illustrated for some recent results on PZN-9.5 PT,PMN and PLZT 6/65/35.

  15. Direct evidence of correlations between relaxor behavior and polar nano-regions in relaxor ferroelectrics: A case study of lead-free piezoelectrics Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-x%BaTiO{sub 3}

    SciTech Connect

    Ge, Wenwei Luo, Chengtao; Devreugd, Christopher P.; Li, Jiefang; Viehland, D.; Zhang, Qinhui; Luo, Haosu; Ren, Yang

    2013-12-09

    Diffuse scattering and relaxor behavior in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} (NBT) and NBT-5.6 at. %BaTiO{sub 3} (NBT-5.6%BT) were investigated. X-ray diffraction revealed two types of diffuse scattering in NBT: (i) broad and (ii) asymmetric L-shaped. After modification with 5.6%BT, the broad diffuse scattering patterns became narrow, and the asymmetric L-shaped ones were replaced by symmetric ones. The symmetric diffuse scattering in NBT-5.6%BT disappeared with increasing dc electric field (E) for E ≥ 9.5 kV/cm where the frequency dispersion in the dielectric constant disappeared. These results demonstrate that the relaxor characteristics are directly correlated with the diffuse scattering and the presence polar nano-regions.

  16. Investigation of a relationship between dielectric peak diffuseness and elastic modulus variations in a ferroelectric relaxor

    NASA Astrophysics Data System (ADS)

    Sarasúa, L. G.; Moreno, A.; Favre, S.; Eiras, J. A.

    2014-03-01

    The dependence with temperature of elastic modulus of relaxor ferroelectric ceramics is modeled with a Landau-Devonshire-type cluster theory. The effective elastic modulus obtained from experimental data of ultrasonic longitudinal velocity in PCT and PLZT ferroelectric ceramics are compared with the proposed model. This comparison shows that the model is able to reproduce the dependence with temperature of elastic modulus c very well. We obtained that as impurity concentration increases in both families, the diffuseness of the transition shows important variations, but the strengths of the couplings between the polarization and the strain remain almost unchanged. In contrast, other models assigned a change in the strengths of the couplings between the polarization and the strain to explain the diffuse transition in these compounds.

  17. A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors

    SciTech Connect

    Wu, Shan; Shao, Ming; Burlingame, Quinn; Chen, Xiangzhong; Lin, Minren; Xiao, Kai; Zhang, Qiming

    2013-01-01

    Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

  18. High Performance Relaxor-Based Ferroelectric Single Crystals for Ultrasonic Transducer Applications

    PubMed Central

    Chen, Yan; Lam, Kwok-Ho; Zhou, Dan; Yue, Qingwen; Yu, Yanxiong; Wu, Jinchuan; Qiu, Weibao; Sun, Lei; Zhang, Chao; Luo, Haosu; Chan, Helen L. W.; Dai, Jiyan

    2014-01-01

    Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33∼2000 pC/N, kt∼60%) near the morphotropic phase boundary (MPB). Ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc) and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed. PMID:25076222

  19. High performance relaxor-based ferroelectric single crystals for ultrasonic transducer applications.

    PubMed

    Chen, Yan; Lam, Kwok-Ho; Zhou, Dan; Yue, Qingwen; Yu, Yanxiong; Wu, Jinchuan; Qiu, Weibao; Sun, Lei; Zhang, Chao; Luo, Haosu; Chan, Helen L W; Dai, Jiyan

    2014-01-01

    Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33~2000 pC/N, kt~60%) near the morphotropic phase boundary (MPB). Ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc) and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed. PMID:25076222

  20. Optimization of electrooptic and pieozoelectric coupling effects in tetragonal relaxor-PT ferroelectric single crystals

    PubMed Central

    Sun, Enwei; Sang, Shijing; Yuan, Zhongyuan; Qi, Xudong; Zhang, Rui; Cao, Wenwu

    2015-01-01

    The electrooptic and piezoelectric coupling effects in tetragonal relaxor-based ferroelectric 0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3 (PMN-0.38PT) and 0.88Pb(Zn1/3Nb2/3)O3-0.12PbTiO3 (PZN-0.12PT) single-domain crystals have been analyzed by the coordinate transformation. The orientation dependence of the electrooptic and half-wave voltage was calculated based on the full sets of refractive indices, electrooptic and piezoelectric coefficients. The optimum orientation cuts for achieving the best electrooptic coefficient and half-wave voltage were found. The lowset half-wave voltage is only 76 V for the PMN-0.38PT single-domain crystal. Compared to commonly used electrooptic crystal LiNbO3, tetragonal relaxor-PT ferroelectric single-domain crystals are much superior for optical modulation applications because of their much higher linear electrooptic coefficients and substantially lower half-wave voltages when the piezoelectric strain influence is considered. PMID:25954059

  1. Simulating the Radio-Frequency Dielectric Response of Relaxor Ferroelectrics: Combination of Coarse-Grained Hamiltonians and Kinetic Monte Carlo Simulations

    NASA Astrophysics Data System (ADS)

    Geneste, Grégory; Bellaiche, L.; Kiat, Jean-Michel

    2016-06-01

    The radio-frequency dielectric response of the lead-free Ba (Zr0.5Ti0.5)O3 relaxor ferroelectric is simulated using a coarse-grained Hamiltonian. This concept, taken from real-space renormalization group theories, allows us to depict the collective behavior of correlated local modes gathered in blocks. Free-energy barriers for their thermally activated collective hopping are deduced from this ab initio-based approach, and used as input data for kinetic Monte Carlo simulations. The resulting numerical scheme allows us to simulate the dielectric response for external field frequencies ranging from kHz up to a few tens of MHz for the first time and to demonstrate, e.g., that local (electric or elastic) random fields lead to the dielectric relaxation in the radio-frequency range that has been observed in relaxors.

  2. Simulating the Radio-Frequency Dielectric Response of Relaxor Ferroelectrics: Combination of Coarse-Grained Hamiltonians and Kinetic Monte Carlo Simulations.

    PubMed

    Geneste, Grégory; Bellaiche, L; Kiat, Jean-Michel

    2016-06-17

    The radio-frequency dielectric response of the lead-free Ba(Zr_{0.5}Ti_{0.5})O_{3} relaxor ferroelectric is simulated using a coarse-grained Hamiltonian. This concept, taken from real-space renormalization group theories, allows us to depict the collective behavior of correlated local modes gathered in blocks. Free-energy barriers for their thermally activated collective hopping are deduced from this ab initio-based approach, and used as input data for kinetic Monte Carlo simulations. The resulting numerical scheme allows us to simulate the dielectric response for external field frequencies ranging from kHz up to a few tens of MHz for the first time and to demonstrate, e.g., that local (electric or elastic) random fields lead to the dielectric relaxation in the radio-frequency range that has been observed in relaxors.

  3. Structure and properties of Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–0.2PbTiO{sub 3} relaxor ferroelectric crystal

    SciTech Connect

    Liu, Ying; Yang, Xiaoming; Lai, Fachun; Huang, Zhigao; Li, Xiuzhi; Wang, Zujian; He, Chao; Lin, Ju; Long, Xifa

    2015-07-15

    Graphical abstract: The relaxor state of the crystal was demonstrated by the dielectric behavior. - Highlights: • PLN–0.2PT ferroelectric crystal was obtained by the TSSG technique. • The super-lattice reflections were identified by XRD and TEM results. • The PLN–0.2PT crystal is a typical relaxor ferroelectric. - Abstract: Ferroelectric crystal Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–0.2PbTiO{sub 3} (PLN–0.2PT) was successfully obtained by a top-seed solution growth technique. At room temperature the symmetry was orthorhomic according to X-ray diffraction (XRD). The super-lattice reflections were identified by XRD and transmission electron microscope (TEM). The micro-domain structure was detected by TEM. The temperature dependence of the dielectric constant (ϵ′) shows a typical relaxor behavior. The temperature dependence of coercive electric field and remnant polarizations were investigated, which also shows the relaxor feature.

  4. Dielectric, Electromechanical and Ferroelectric Properties of (Na0.5Bi0.5)(NdxTi1-2xNbx)O3 Relaxor Ceramics

    NASA Astrophysics Data System (ADS)

    Mahboob, S.; Prasad, G.; Kumar, G. S.

    Polycrystalline (Na0.5Bi0.5)(NdxTi1-2xNbx)O3 ceramics with perovskite structure were prepared through the solid state sintering route. The prepared samples were studied for their dielectric, electromechanical and ferroelectric properties. Dielectric measurements showed relaxor behavior. From electromechanical studies, a relatively high electro-mechanical coupling factor, kt (in the range 0.69-0.73) depending upon composition was observed. Among the samples studied, x = 0.0125 exhibited a higher value of remanant polarization (~ 0.50 μC/cm2 at coercive field (Ec = 6.30 kV/cm)).

  5. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications.

    PubMed

    Sun, Enwei; Cao, Wenwu

    2014-08-01

    In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-x Ti x O3 (PZT) ceramics, the piezoelectric coefficient d 33 is increased by a factor of 5 and the electromechanical coupling factor k 33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery

  6. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications

    PubMed Central

    Sun, Enwei; Cao, Wenwu

    2014-01-01

    In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery

  7. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications.

    PubMed

    Sun, Enwei; Cao, Wenwu

    2014-08-01

    In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-x Ti x O3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery

  8. Anomalous negative electrocaloric effect in a relaxor/normal ferroelectric polymer blend with controlled nano- and meso-dipolar couplings

    NASA Astrophysics Data System (ADS)

    Qian, Xiaoshi; Yang, Tiannan; Zhang, Tian; Chen, Long-Qing; Zhang, Q. M.

    2016-04-01

    In general, a dielectric material will eject (or absorb) heat when an electric field is applied and absorb (or eject) heat when the field is removed, under isothermal condition, which is known as the normal (or negative) electrocaloric (EC) effect. For some applications, it is highly desired that an EC material will absorb heat (cooling the surrounding) without subsequent heating under an electric pulse. Here, we show that such an EC material can be realized in a properly designed hybrid normal ferroelectric/relaxor ferroelectric polymer blend in which the normal ferroelectric component induces dipole ordering in the relaxor polymer in the poled state, which can be switched to a de-poled state by an external field. More importantly, the de-poled state can be maintained by the relaxor component when the de-poling field is removed. Consequently, the hybrid blend exhibits a large cooling (an isothermal entropy change ΔS = 11.5 J kg-1 K-1) without the subsequent heating upon the application of an electric pulse.

  9. Resonant inelastic light scattering studies in the fractional quantum Hall regime, and of phase transitions in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Dujovne, Irene

    This dissertation presents inelastic light scattering results that probe low energy physics in quantum liquids and in materials with novel contemporary applications. Two areas are considered: (a) low-lying excitations in two dimensional structures under the extreme conditions that occur in the fractional quantum Hall regime (FQH), (b) low energy vibrational modes in relaxor ferroelectrics. In the FQH regime we concentrate in the region 1/2 ≥ nu ≥ 1/3. We discovered new spin-flip excitations that provide insight into composite fermions (CF) energy level spacings and interactions. In the filling factor region 2/5 ≥ nu ≥ 1/3 we uncover new excitations that extend to filling factors between the main fractions of the FQH effect and can be associated to transitions between different CF Landau levels. These results provide information on residual interactions between the CFs. We find that residual interactions are not negligible and could lead to novel behaviors. An analysis of the density dependence of CF energy levels at filling factors nu = 1/3 and nu = 2/5 based on simple energy level models is presented. The main assumptions are that the splitting between quasiparticle levels and spin reversal energies are proportional to the Coulomb energy. Energy level structures of CF quasiparticles are also probed by means of light scattering experiments with spin-flip excitations at nu = 3/7 and nu = 4/9. Measurements of spin excitations in the limit of nu → 1/2 uncover a delicate balance between spin reversal and Fermi energies. The interactions are exposed in low-lying spin-flip excitations that have marked sensitivity to the state of spin polarization of the system when nu → 1/2. We are able to determine the boundaries between full and partial spin polarization, these, together with the observation of spin-flip rotons reveal spin reversal energies much larger than the bare Zeeman splitting. Inelastic light scattering by optical phonons (Raman scattering) in

  10. Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

    NASA Astrophysics Data System (ADS)

    Nagata, Takahiro; Kumaragurubaran, Somu; Tsunekawa, Yoshifumi; Yamashita, Yoshiyuki; Ueda, Shigenori; Takahashi, Kenichiro; Ri, Sung-Gi; Suzuki, Setsu; Oh, Seungjun; Chikyow, Toyohiro

    2016-06-01

    The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3–Bi(Mg2/3Nb1/3)O3 (BT–BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT–BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT–BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT–BMN stack structure is a potential candidate for the high-temperature operational capacitor.

  11. Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

    NASA Astrophysics Data System (ADS)

    Nagata, Takahiro; Kumaragurubaran, Somu; Tsunekawa, Yoshifumi; Yamashita, Yoshiyuki; Ueda, Shigenori; Takahashi, Kenichiro; Ri, Sung-Gi; Suzuki, Setsu; Oh, Seungjun; Chikyow, Toyohiro

    2016-06-01

    The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT-BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT-BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT-BMN stack structure is a potential candidate for the high-temperature operational capacitor.

  12. Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

    DOE PAGESBeta

    Manley, M. E.; Abernathy, D. L.; Sahul, R.; Stonaha, P. J.; Budai, J. D.

    2016-09-22

    A long-standing controversy for relaxor ferroelectrics has been the origin of the waterfall effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the waterfall wavevector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014)] we have reexamined this feature using neutronmore » scattering on [100]-poled PMN-30%PT (0.6Pb(Mg1/3Nb2/3)O3 0.3PbTiO3). In addition, we find that the PNR mode couples to both optic and acoustic phonons, and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.« less

  13. Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

    NASA Astrophysics Data System (ADS)

    Manley, M. E.; Abernathy, D. L.; Sahul, R.; Stonaha, P. J.; Budai, J. D.

    2016-09-01

    A longstanding controversy for relaxor ferroelectrics has been the origin of the "waterfall" effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the "waterfall" wave vector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014), 10.1038/ncomms4683], we have reexamined this feature using neutron scattering on [100]-poled PMN-30%PT [0.6 Pb (M g1 /3N b2 /3 ) O3-0.3 PbTi O3] . We find that the PNR mode couples to both optic and acoustic phonons and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.

  14. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor-ferroelectric ceramic composites

    NASA Astrophysics Data System (ADS)

    Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; Okatan, B.; Jesse, S.; Kalinin, S. V.; Groh, C.; Rödel, J.; Lupascu, D. C.

    2016-01-01

    Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. Nonetheless, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. We report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. Our results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. Nonetheless, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. We report a different set of switching parameters for grains in the

  15. Effects of composition and temperature on the large-field behavior of [001]C relaxor single crystals.

    PubMed

    Gallagher, John; Lynch, Christopher; Tian, Jian

    2014-12-01

    The compositional dependence of the large-field behavior of [001]C-cut relaxor ferroelectric xPb(In1/2Nb1/2) O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3 (PIN-PMN-PT) single crystals that are on the rhombohedral side of the morphotropic phase boundary was characterized under electrical, mechanical, and thermal loading. The effects of varying the concentrations of PIN and PT are discussed. Composition was found to impact the material constants and the field-induced phase transformation threshold in the piezoelectric d333-mode configuration. PMID:25474790

  16. Origin of the crossover between a freezing and a structural transition at low concentration in the relaxor ferroelectric K1 -xLixTaO3

    NASA Astrophysics Data System (ADS)

    Cai, Ling; Toulouse, Jean; Harriger, Leland; Downing, R. Gregory; Boatner, L. A.

    2015-04-01

    The origin of the relaxor behavior in K1 -xLixTaO3(KLT ) and other disordered perovskites is now recognized to be due to the reorientation of the polar nanodomains formed by the correlated dipoles of off-center ions. The collective dynamics of these systems evolve through several temperature stages. On decreasing temperature below the so-called Burns temperature TB, individual dipoles become correlated within nanosized regions. On further cooling, the slow dynamics of these polar regions allows local lattice distortions to take place and the formation of polar nanodomains at T*relaxors undergo a phase transition while others do not. In KLT, there is a critical Li concentration xc=0.022 above which the system undergoes a structural transition at Tc, and below which it freezes in a dipole glass state at Tf. To better understand the nature of this critical concentration, the changes that occur upon crossing it and the nature of the dipole glass state, the collective dynamics of KLT have been studied by dielectric spectroscopy and neutron diffraction for two Li concentrations (x =0.026 and 0.018 ) , close to but straddling the critical concentration xc. Two very different transitional behaviors are observed. Just below this critical concentration, KLT displays critical slowing down and the onset of freezing as seen in hydrogen-bonded molecular ferroelectrics, while just above this concentration, KLT undergoes a first-order structural transition.

  17. Novel Polymer Ferroelectric Behavior via Crystal Isomorphism and Nanoconfinement Effect

    NASA Astrophysics Data System (ADS)

    Zhu, Lei

    2014-03-01

    Despite comprehensive understanding of novel ferroelectric [i.e., relaxor ferroelectric (RFE) and antiferroelectric (AFE)] behaviors for ceramics, RFE and double hysteresis loop (DHL) behaviors have just emerged for ferroelectric crystalline polymers since the past 15 years. A number of applications such as electrostriction, electric energy storage, and electrocaloric cooling have been realized by utilizing these novel ferroelectric properties. However, the fundamental understanding is still lacking. In this invited talk, we intend to unravel the basic physics behind these novel ferroelectric behaviors via systematic studies of poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)]-based terpolymers and e-beam irradiated copolymers. It is found that both crystal internal structure and crystal-amorphous interaction are important for achieving the RFE and DHL behaviors. For the crystal internal structure effect, friction-free dipole switching and nanodomain formation by pinning the polymer chains are essential, and they can be achieved via the mechanism of crystal repeating unit isomorphism. Physical pinning [e.g., in P(VDF-TrFE)-based terpolymers] induces a reversible RFE <-->FE phase transition and thus the DHL behavior, whereas chemical pinning [e.g., in e-beam irradiated P(VDF-TrFE)] results in the RFE behavior. Finally, the crystal-amorphous interaction (or the nanoconfinement effect) results in a competition between the polarization and depolarization local fields. When the depolarization field becomes stronger than the polarization field, a DHL behavior can also be observed. Obviously, the physics is different from ceramics and can be largely attributed to the long chain nature of semicrystalline ferroelectric polymers. This understanding will help us design new ferroelectric polymers with improved electroactive properties and/or better applications. This work is supported by NSF DMR-0907580.

  18. Relaxor ferroelectric-like high effective permittivity in leaky dielectrics/oxide semiconductors induced by electrode effects: A case study of CuO ceramics

    NASA Astrophysics Data System (ADS)

    Li, Ming; Feteira, Antonio; Sinclair, Derek C.

    2009-06-01

    The electrical behavior of copper oxide (CuO) ceramics sintered at 920 °C has been characterized by a combination of fixed, radio frequency (rf) capacitance measurements, and impedance spectroscopy (IS). Fixed rf capacitance measurements on ceramics with sputtered Au electrodes revealed a temperature- and frequency-dependent high effective permittivity of ˜104 in the temperature range of 150-320 K. The response is similar to that observed for relaxor-ferroelectrics, however, the magnitude of the effect can be suppressed by thermal annealing of the ceramics with Au electrodes in air at 300 °C or by changing the work function of the electrode material by using In-Ga as opposed to Au. IS data analysis revealed the ceramics to be electrically heterogeneous semiconductors with a room temperature dc resistivity <104 Ω cm, consisting of semiconducting grains with relative permittivity, ɛr, <10 and slightly more resistive grain boundaries with "effective" permittivity, ɛeff, of ˜110. Samples with Au electrodes exhibited an additional low frequency response with ɛeff˜104. dc bias experiments showed the capacitance behavior of this additional response to obey the Mott-Schottky law and thus confirm it to be a non-Ohmic electrode contact. We conclude, therefore, that an electrode rather than a grain boundary effect is the primary source for the high effective permittivity in CuO ceramics, although the latter is also present and does give additional effective permittivity. This work demonstrates how an extrinsic effect associated with non-Ohmic electrode contacts can; (i) dominate the rf capacitance spectra of leaky dielectrics/oxide semiconductors over a wide temperature and frequency range; and, (ii) manifest a dielectric response more typically associated with relaxor-ferroelectrics.

  19. Octahedral tilting in Pb-based relaxor ferroelectrics at high pressure.

    PubMed

    Maier, Bernd J; Angel, Ross J; Marshall, William G; Mihailova, Boriana; Paulmann, Carsten; Engel, Jens M; Gospodinov, Marin; Welsch, Anna-Maria; Petrova, Dimitrina; Bismayer, Ulrich

    2010-06-01

    We have employed a combination of powder neutron diffraction and single-crystal synchrotron X-ray diffraction to characterize the pressure-induced phase transitions that occur in the perovskite-type relaxor ferroelectric PbSc(0.5)Ta(0.5)O(3) (PST) and Pb(0.78)Ba(0.22)Sc(0.5)Ta(0.5)O(3) (PST-Ba). At ambient pressure the symmetry of the average structure for both compounds is Fm3m as a result of partial ordering of the Sc and Ta cations on the octahedral sites. At pressures above the phase transition both the neutron and X-ray diffraction patterns exhibit an increase in the intensities of h,k,l = all odd reflections and no appearance of additional Bragg reflections. Synchrotron single-crystal X-ray diffraction data show that the intensity of hhh peaks, h = 2n + 1, does not change with pressure. This indicates that the structural distortion arising from the phase transition has a glide-plane pseudo-symmetry along the 111 cubic directions. Rietveld refinement to the neutron powder data shows that the high-pressure phase has either R3c or R3 symmetry, depending on whether the presence of 1:1 octahedral cation ordering is neglected or taken into account, and comprises octahedral tilts of the type a(-)a(-)a(-) that continuously evolve with pressure. The cubic-to-rhombohedral transition is also marked by a large increase in the anisotropy of the displacement ellipsoids of the Pb cations, indicating larger displacements of Pb cations along the rhombohedral threefold axis rather than within the perpendicular plane. For PST the anisotropy of the Pb displacement parameters decreases at approximately 3 GPa above the phase-transition pressure. For both PST and PST-Ba the average magnitudes of Pb-cation displacements expressed in terms of isotropic displacement ellipsoids gradually decrease over the entire pressure range from ambient to 7.35 GPa. PMID:20484799

  20. Relaxor behavior of CaxBa1-xNb2O6 (0.18≤x≤0.35) tuned by Ca/Ba ratio and investigated by resonant ultrasound spectroscopy

    NASA Astrophysics Data System (ADS)

    Pandey, Chandra Shekhar; Schreuer, Jürgen; Burianek, Manfred; Mühlberg, Manfred

    2013-03-01

    Dependence of relaxor behavior of incompletely filled tetragonal tungsten bronze uniaxial relaxor ferroelectric calcium barium niobate (CaxBa1-xNb2O6, CBN-x) on its composition was investigated by varying Ca/Ba ratio (0.18 ≤ x ≤ 0.35) and studying its thermal and elastic properties. Recently, we have reported the relaxor behavior CBN-28 with the evidence of the existence of the Burns temperature TB, and the intermediate characteristic temperature T* [Pandey , Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.84.174102 84, 174102 (2011)]. In this work, we show that the dynamics of polar nanoregions (and hence the relaxor behavior) strongly varies with the Ca/Ba ratio. Evidence is found for a more pronounced relaxor behavior with increasing x. The Curie temperature and the Burns temperature are also very sensitive to the composition, whereas the characteristic temperature T* appears unaffected from the Ca/Ba ratio. The bonding interaction has been explained on the basis of bulk modulus, Poisson's ratio, and deviation from Cauchy relations. Presented results open the perspective to understand the variation of relaxor behavior of CBN-x (˜0.18≤x≤˜0.35) above Curie temperature.

  1. Subterahertz dielectric relaxation in lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

    PubMed Central

    Wang, D.; Bokov, A. A.; Ye, Z.-G.; Hlinka, J.; Bellaiche, L.

    2016-01-01

    Relaxors are complex materials with unusual properties that have been puzzling the scientific community since their discovery. The main characteristic of relaxors, that is, their dielectric relaxation, remains unclear and is still under debate. The difficulty to conduct measurements at frequencies ranging from ≃1 GHz to ≃1 THz and the challenge of developing models to capture their complex dynamical responses are among the reasons for such a situation. Here, we report first-principles-based molecular dynamic simulations of lead-free Ba(Zr0.5Ti0.5)O3, which allows us to obtain its subterahertz dynamics. This approach reproduces the striking characteristics of relaxors including the dielectric relaxation, the constant-loss behaviour, the diffuse maximum in the temperature dependence of susceptibility, the substantial widening of dielectric spectrum on cooling and the resulting Vogel–Fulcher law. The simulations further relate such features to the decomposed dielectric responses, each associated with its own polarization mechanism, therefore, enhancing the current understanding of relaxor behaviour. PMID:27040174

  2. Subterahertz dielectric relaxation in lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, D.; Bokov, A. A.; Ye, Z.-G.; Hlinka, J.; Bellaiche, L.

    2016-04-01

    Relaxors are complex materials with unusual properties that have been puzzling the scientific community since their discovery. The main characteristic of relaxors, that is, their dielectric relaxation, remains unclear and is still under debate. The difficulty to conduct measurements at frequencies ranging from ~=1 GHz to ~=1 THz and the challenge of developing models to capture their complex dynamical responses are among the reasons for such a situation. Here, we report first-principles-based molecular dynamic simulations of lead-free Ba(Zr0.5Ti0.5)O3, which allows us to obtain its subterahertz dynamics. This approach reproduces the striking characteristics of relaxors including the dielectric relaxation, the constant-loss behaviour, the diffuse maximum in the temperature dependence of susceptibility, the substantial widening of dielectric spectrum on cooling and the resulting Vogel-Fulcher law. The simulations further relate such features to the decomposed dielectric responses, each associated with its own polarization mechanism, therefore, enhancing the current understanding of relaxor behaviour.

  3. Phonon mode and phase transition behaviors of (1-x)PbSc1/2Ta1/2O3-xPbHfO3 relaxor ferroelectric ceramics determined by temperature-dependent Raman spectra

    NASA Astrophysics Data System (ADS)

    Zhang, W. J.; Li, W. W.; Chen, X. G.; Hu, Z. G.; Liu, W.; Wang, G. S.; Dong, X. L.; Chu, J. H.

    2011-07-01

    The composition dependence of phase transition temperature in (1-x)PbSc1/2Ta1/2O3-xPbHfO3 (PSTH) ceramics (0≤x≤0.2) has been investigated by Raman spectra. From the typical phonon mode variations, the PSTH ceramics unambiguously undergoes three structural transformations with increasing the temperature from 82 to 673 K. It was found that the F2g phonon mode disappears above the Curie temperature. Moreover, the PSTH ceramics exhibited the paraelectric to ferroelectric phase transitions at 287, 293, 313, 320, and 330 K with the composition. The phenomena can be ascribed to the enhanced length of Pb-O-Ta bonds induced by the incorporation of Hf4+ ions.

  4. An Ising-like Model to Predict Dielectric Properties of the Relaxor Ferroelectric Solid Solution Barium titanate - Bismuth(Zinc1/2Titanium 1/2)Oxide

    NASA Astrophysics Data System (ADS)

    Jackson, Dennis L.

    We developed a model to investigate the dielectric properties of the BaTiO3 - Bi(Zn 1/2Ti1/2)O3 (BT-BZT) solid solution, which is a relaxor ferroelectric and exhibits long range disorder. The model uses ab initio methods to determine all polarization states for every atomic configuration of 2x2x2 supercells of BT-BZT. Each supercell is placed on a lattice with an Ising-like interaction between neighboring cell polarizations. This method allows us to consider long range disorder, which is not possible with ab initio methods alone, and is required to properly understand relaxor ferroelectric materials. We analyze the Monte Carlo data for a single lattice configuration using the multiple histogram method, and develop a modified histogram technique to combine data from multiple lattice configurations. Our calculated values of dielectric constant, specific heat, and polarization agree reasonably well with experiment.

  5. Analysis of polarization behavior in relaxation of BaTiO₃-based ferroelectrics using wideband dielectric spectroscopy.

    PubMed

    Teranishi, Takashi; Hoshina, Takuya; Takeda, Hiroaki; Tsurumi, Takaaki

    2010-10-01

    Wideband dielectric spectra from the kilohertz to terahertz range are discussed for BaTiO₃-based ferroelectrics. Ceramics of BaTiO₃ (BT), Ba(0.6)Sr(0.4)TiO₃ (BST-0.6), and BaZr(0.25)Ti(0.75)O₃ (BZT-0.25) were selected as normal ferroelectrics, ferroelectrics with diffuse phase transition (DPT ferroelectrics), and relaxor ferroelectrics, respectively. The variation of ionic polarization in both BT and BST-0.6 ceramics with temperature could be explained by the softening of the soft phonon mode. In BZT-0.25, a permittivity anomaly at the dielectric maximum temperature (T(m)) at low frequencies is not attributed to the softening of the soft phonon mode, but originates from the permittivity derived from the dipole polarization (ϵ(dipole)). Relaxor behavior in BZT-0.25 is derived from the increase in the depression of ϵ(dipole) on cooling across the T(m) with increasing frequency. In dipole polarization, BT, BST- 0.6, and BZT-0.25 all exhibited a similar tendency of ϵ(dipole) above the Curie temperature (T(c)) and T(m). However, behavior of ϵ(dipole) below the T(c) can be explained by the ferroelectric domains in BT, whereas the variation of ϵ(dipole) below the Tm could be explained by growth process of polar nanoregions (PNRs) in BST-0.6 and BZT-0.25. Regarding this, BT can be distinguished from BST-0.6 and BZT-0.25. Relaxation in BT could be interpreted as successive change in polarization mechanism from normal ferroelectrics to relaxor ferroelectrics via DPT ferroelectrics.

  6. Optical properties of epitaxial relaxor ferroelectric PbSc0.5Nb0.5O3 films

    NASA Astrophysics Data System (ADS)

    Lynnyk, A.; Chvostova, D.; Pacherova, O.; Kocourek, T.; Jelinek, M.; Dejneka, A.; Tyunina, M.

    2013-09-01

    The optical properties of epitaxial perovskite-structure relaxor ferroelectric PbSc0.5Nb0.5O3 thin films are studied in broad spectral and temperature ranges by variable-angle spectroscopic ellipsometry. The films possess a metrically tetragonal crystal structure with a biaxial in-plane compressive strain of 0.1%-0.8%. The optical constants of the films with thickness of 10-50 nm are determined accurately using the advanced ellipsometry technique. The dramatic changes in the spectra of the dielectric functions and the absorption coefficient are found under various strain conditions. The characteristic energies of the spectra, including the bandgaps, vary by 0.1-0.5 eV. A frustration of the ferroelectric phase transition is evidenced by thermo-optical studies. A complex relationship between strain, polarization, and optical properties is discussed in terms of possible ionic displacements in metrically tetragonal PbSc0.5Nb0.5O3 films.

  7. Stress-modulated relaxor-to-ferroelectric transition in lead-free (N a1 /2B i1 /2 ) Ti O3-BaTi O3 ferroelectrics

    NASA Astrophysics Data System (ADS)

    Schader, Florian H.; Wang, Zhiyang; Hinterstein, Manuel; Daniels, John E.; Webber, Kyle G.

    2016-04-01

    The effect of external mechanical fields on relaxor 0.94 (N a1 /2B i1 /2 ) Ti O3-0.06 BaTi O3 was investigated by means of temperature- and stress-dependent dielectric constant measurements between 223 and 673 K. Analogous to previous investigations that showed an electric-field-induced ferroelectric long-range order in relaxor ferroelectrics, we show that compressive stress can also result in the transition to the long-range ferroelectric order, marked by the formation of an anomaly in the permittivity-temperature curves and a nonlinear, remanent change in permittivity during mechanical loading. In situ stress-dependent high-energy x-ray diffraction experiments were performed at room temperature and reveal an apparent phase transition during mechanical loading, consistent with previous macroscopic electrical measurements. The transition lines between the relaxor states and the stress-induced ferroelectric state were determined at constant temperatures with stress-dependent dielectric constant measurements, providing a stress-temperature phase diagram.

  8. Domain size effects in a uniaxial ferroelectric relaxor system: The case of SrxBa1-xNb2O6

    NASA Astrophysics Data System (ADS)

    Voelker, Uwe; Heine, Urs; Gödecker, Christoph; Betzler, Klaus

    2007-12-01

    We present investigations of the domain dynamics and of the evolution of the critical exponent β in a ferroelectric relaxor system, exemplarily in the up-to-date controversial strontium barium niobate (SBN). k-space spectroscopy at the phase-transition and when applying an electric field reveals a size-dependent response of the domains. This is supported by pyroelectric measurements that show, by analysis in terms of criticality, the critical exponent β is not only dependent on the level of poling but also on the manner in which the poling was achieved. It must be concluded that the crystals undergo a phase transition not—as commonly assumed—in a uniform way with homogeneous polarization throughout the crystal. Instead they behave as a set of more or less independent domains with size-dependent stability. Therefore, one should be very careful with critical exponents—especially those derived from experiments that explicitly or implicitly—assume a uniform polarization behavior.

  9. Anisotropic phonon coupling in the relaxor ferroelectric (Na1/2Bi1/2)TiO3 near its high-temperature phase transition

    NASA Astrophysics Data System (ADS)

    Cai, Ling; Toulouse, Jean; Luo, Haosu; Tian, Wei

    2014-08-01

    The lead free relaxor Na1/2Bi1/2TiO3 (NBT) undergoes a structural cubic-to-tetragonal transition near 800 K which is caused by the cooperative rotations of O6 octahedra. These rotations are also accompanied by the displacements of the cations and the formation of the polar nanodomains (PNDs) that are responsible for the characteristic dielectric dispersion of relaxor ferroelectrics. Because of their intrinsic properties, spontaneous polarization, and lack of inversion symmetry, these PNDs are also piezoelectric and can mediate an interaction between polarization and strain or couple the optic and acoustic phonons. Because PNDs introduce a local tetragonal symmetry, the phonon coupling they mediate is found to be anisotropic. In this paper we present inelastic neutron scattering results on coupled transverse acoustic (TA) and transverse optic (TO) phonons in the [110] and [001] directions and across the cubic-tetragonal phase transition at TC˜800 K. The phonon spectra are analyzed using a mode coupling model. In the [110] direction, as in other relaxors and some ferroelectric perovskites, a precipitous drop of the TO phonon into the TA branch or "waterfall" is observed at a certain qwf˜0.14 r.l.u. In the [001] direction, the highly overdamped line shape can be fitted with closely positioned bare mode energies which are largely overlapping along the dispersion curves. Two competing lattice coupling mechanism are proposed to explain these observations.

  10. Phonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary

    SciTech Connect

    John A. Schneeloch; Xu, Zhijun; Winn, B.; Stock, C.; Gehring, P. M.; Birgeneau, R. J.; Xu, Guangyong

    2015-12-28

    We report neutron inelastic scattering experiments on single-crystal PbMg1/3Nb2/3O3 doped with 32% PbTiO3, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field E∥ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to E weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to E weakens for energy transfers 4 ≤ ℏω ≤ 9 meV. However, TA and TO phonons polarized perpendicular to E show no change. This anisotropic field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to E but not when polarized perpendicular to E. Lastly, our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.

  11. Phonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary

    DOE PAGESBeta

    John A. Schneeloch; Xu, Zhijun; Winn, B.; Stock, C.; Gehring, P. M.; Birgeneau, R. J.; Xu, Guangyong

    2015-12-28

    We report neutron inelastic scattering experiments on single-crystal PbMg1/3Nb2/3O3 doped with 32% PbTiO3, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field E∥ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to E weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to E weakens for energy transfers 4 ≤ ℏω ≤ 9 meV. However, TA and TO phonons polarized perpendicular to E show no change. This anisotropicmore » field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to E but not when polarized perpendicular to E. Lastly, our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.« less

  12. Relaxation and phase-transition characteristics of relaxor ferroelectric potassium lithium niobate

    NASA Astrophysics Data System (ADS)

    Jun, Byeong-Eog; Jeong, Jung Hyun; Choi, Byung Chun; Hwang, Yoon-Hwae

    2015-06-01

    The electric modulus relaxations were considered to be coupled phenomena between the polarization fluctuations < P 2 > due to local symmetry breaking and ionic hopping through nearest neighbor sites. The Nb-rich potassium lithium niobate (K5.595Li3.125Nb11.28O30) crystals exhibited a ferroelectric diffused phase transition around the dielectric maximum temperature T max = 350. The electric modulus relaxations were characterized by using the Cole-Davidson distribution of the electric modulus relaxation times at frequencies ranging from 100 Hz to 1 MHz. Although the lattice constants along the a-axes and the c-axes and the tetragonal unit cell volume showed linear expansions with increasing temperature T, the axial ratio c/a decreased with increasing T at temperatures below the Burn's temperature TB. The dielectric relaxation accompanied the high ionic conduction in the temperature range above T. The ac conductivity σ'( ω) was analyzed by using the formulae, where ω O is the crossover frequency. It was considered that a double-Arrhenius behavior of the dc conductivity σ dc at temperatures around the Burn's temperature T B was suspected of thermally activated motions in the random distribution of oxygen vacancies and lithium ions. The ac universality could result in a disordered configuration of the mobile ions, i.e., the dc conductivity at temperatures above T B . The slow relaxations of the nano-sized polar regions may contribute to the dc conductivity σ dc at temperatures below T B . The characteristic relaxation time τ CD showed a change in activation energy from 1.08 eV to 0.80 eV at temperatures around T B . The scaling factor increased in proportion to ( T B - T) at T T B , but was almost constant at T >T B , where ɛ'∞ is the high frequency dielectric constant and T is the temperature in Kelvin.

  13. X-ray absorption spectroscopy of Ru-doped relaxor ferroelectrics with a perovskite-type structure

    NASA Astrophysics Data System (ADS)

    Vitova, T.; Mangold, S.; Paulmann, C.; Gospodinov, M.; Marinova, V.; Mihailova, B.

    2014-04-01

    X-ray absorption near-edge structure and extended x-ray absorption fine structure spectroscopy at the Ru K edge of Ru-doped PbSc0.5Ta0.5O3 (PST-Ru), PbSc0.5Nb0.5O3 (PSN-Ru), and 0.9PbZn1/3Nb2/3O3-0.1PbTiO3 (PZN-0.1PT-Ru) as well as at the Ta L3 edge of PST-Ru and the Nb K edge of PSN-Ru was applied to study the short- and intermediate-range atomic arrangements in perovskite-type (ABO3) relaxor ferroelectrics. The compounds were also analyzed by complementary Raman scattering, visible/near-visible absorption spectroscopy, and synchrotron x-ray single-crystal diffraction. The results show that Ru is octahedrally coordinated in all three relaxor host matrices but the average oxidation state of Ru in PST-Ru and PSN-Ru is ˜4.4, whereas it is ˜3.8 in PZN-0.1PT-Ru. In PbSc0.5B''0.5O3 (B'' = Ta, Nb) Ru substitutes for the B'' cations in the form of isolated point defects, while in PZN-0.1PT-Ru Ru replaces adjacent A and B sites, forming a chainlike structural species of face-sharing elongated octahedra. Chemical 1:1 B-site order as well as dynamic BO6 tilting is observed around both the Ru dopant and the major B'' cation in PST-Ru and PSN-Ru regardless of the fact that according to x-ray diffraction at ambient conditions, the average structure is cubic with weak or no long-range chemical order. Pb cations are off-center displaced from the prototypic cubic A site for all three compounds and in Ru-doped PbSc0.5B''0.5O3 the BO6 tilt angle correlates with the degree of coherent B-Pb distances.

  14. Ergodicity reflected in macroscopic and microscopic field-dependent behavior of BNT-based relaxors

    SciTech Connect

    Dittmer, Robert; Jo, Wook Rödel, Jürgen; Gobeljic, Danka; Shvartsman, Vladimir V.; Lupascu, Doru C.; Jones, Jacob L.

    2014-02-28

    The effect of heterovalent B-site doping on ergodicity of relaxor ferroelectrics is studied using (1 − y)(0.81Bi{sub 1/2}Na{sub 1/2}TiO{sub 3}-0.19Bi{sub 1/2}K{sub 1/2}TiO{sub 3})-yBiZn{sub 1/2}Ti{sub 1/2}O{sub 3} (BNT-BKT-BZT) with y = (0.02;0.03;0.04) as a model system. Both the large- and small-signal parameters are studied as a function of electric field. The crystal structure is assessed by means of neutron diffraction in the initial state and after exposure to a high electric field. In order to measure ferroelastic domain textures, diffraction patterns of the poled samples are collected as a function of sample rotation angle. Piezoresponse force microscopy (PFM) is employed to probe the microstructure for polar regions at a nanoscopic scale. For low electric fields E < 2 kV·mm{sup −1}, large- and small-signal constitutive behavior do not change with composition. At high electric fields, however, drastic differences are observed due to a field-induced phase transition into a long-range ordered state. It is hypothesized that increasing BZT content decreases the degree of non-ergodicity; thus, the formation of long-range order is impeded. It is suggested that frozen and dynamic polar nano regions exist to a different degree, depending on the BZT content. This image is supported by PFM measurements. Moreover, PFM measurements suggest that the relaxation mechanism after removal of the bias field is influenced by surface charges.

  15. Ergodicity reflected in macroscopic and microscopic field-dependent behavior of BNT-based relaxors

    NASA Astrophysics Data System (ADS)

    Dittmer, Robert; Gobeljic, Danka; Jo, Wook; Shvartsman, Vladimir V.; Lupascu, Doru C.; Jones, Jacob L.; Rödel, Jürgen

    2014-02-01

    The effect of heterovalent B-site doping on ergodicity of relaxor ferroelectrics is studied using (1 - y)(0.81Bi1/2Na1/2TiO3-0.19Bi1/2K1/2TiO3)-yBiZn1/2Ti1/2O3 (BNT-BKT-BZT) with y = {0.02;0.03;0.04} as a model system. Both the large- and small-signal parameters are studied as a function of electric field. The crystal structure is assessed by means of neutron diffraction in the initial state and after exposure to a high electric field. In order to measure ferroelastic domain textures, diffraction patterns of the poled samples are collected as a function of sample rotation angle. Piezoresponse force microscopy (PFM) is employed to probe the microstructure for polar regions at a nanoscopic scale. For low electric fields E < 2 kV.mm-1, large- and small-signal constitutive behavior do not change with composition. At high electric fields, however, drastic differences are observed due to a field-induced phase transition into a long-range ordered state. It is hypothesized that increasing BZT content decreases the degree of non-ergodicity; thus, the formation of long-range order is impeded. It is suggested that frozen and dynamic polar nano regions exist to a different degree, depending on the BZT content. This image is supported by PFM measurements. Moreover, PFM measurements suggest that the relaxation mechanism after removal of the bias field is influenced by surface charges.

  16. The effect of chemical variations on the structural polarity of relaxor ferroelectrics studied by resonance Raman spectroscopy.

    PubMed

    Rohrbeck, A; de la Flor, G; Aroyo, M I; Gospodinov, M; Bismayer, U; Mihailova, B

    2016-11-30

    Resonance Raman spectroscopy was applied to doped PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 relaxor ferroelectrics, to better understand the effect of composition disorder on the mesoscopic-scale polar order in complex perovskite-type (ABO3) ferroelectrics. The excitation photon energy used was 3.8 eV, which is slightly above the energy gap and corresponds to the maximum of the optical dielectric permittivity. Group-theory analysis reveals that the resonance Raman scattering (RRS) observed under these conditions is allowed only in polar crystal classes. Therefore, RRS is dominated by the atomic dynamics of nanoregions with coherent polar distortions, which considerably facilitates the comparison of polar order in various compounds. The results show that A-site doping (Ba(2+), Sr(2+), La(3+), Bi(3+)) has significantly stronger effect on the structural polarity than the introduction of a third element at the B site (Nb(5+) or Sn(4+) doped in PbSc0.5Ta0.5O3). The A-site substitution by cations that in contrast to Pb(2+) have isotropic outermost electron shells disturbs the system of lone-pair electrons, thus reducing the correlation length of coupled polar distortions and the strength of the electric field associated with the mean polarization of polar nanoregions. A-site doping with larger cations (Ba(2+)) augments the polar deformation of the individual BO6 octahedra due to local elastic fields. As a result, such A-site doping intensifies the initial structural polarity at high temperatures and prevails the enlargement of the polar fraction at low temperatures. A-site doping with smaller cations (Sr(2+), La(3+)), regardless if they are isovalent or aliovalent to Pb(2+), increases the correlation length of antiferrodistortive order (BO6 tilts), which in turn assists the development of double-perovskite structure with coherent local polar distortions. A-site doping with aliovalent cations (Bi(3+)) having the same outermost electron shell and ionic radius as the host A

  17. The effect of chemical variations on the structural polarity of relaxor ferroelectrics studied by resonance Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Rohrbeck, A.; de la Flor, G.; Aroyo, M. I.; Gospodinov, M.; Bismayer, U.; Mihailova, B.

    2016-11-01

    Resonance Raman spectroscopy was applied to doped PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 relaxor ferroelectrics, to better understand the effect of composition disorder on the mesoscopic-scale polar order in complex perovskite-type (ABO3) ferroelectrics. The excitation photon energy used was 3.8 eV, which is slightly above the energy gap and corresponds to the maximum of the optical dielectric permittivity. Group-theory analysis reveals that the resonance Raman scattering (RRS) observed under these conditions is allowed only in polar crystal classes. Therefore, RRS is dominated by the atomic dynamics of nanoregions with coherent polar distortions, which considerably facilitates the comparison of polar order in various compounds. The results show that A-site doping (Ba2+, Sr2+, La3+, Bi3+) has significantly stronger effect on the structural polarity than the introduction of a third element at the B site (Nb5+ or Sn4+ doped in PbSc0.5Ta0.5O3). The A-site substitution by cations that in contrast to Pb2+ have isotropic outermost electron shells disturbs the system of lone-pair electrons, thus reducing the correlation length of coupled polar distortions and the strength of the electric field associated with the mean polarization of polar nanoregions. A-site doping with larger cations (Ba2+) augments the polar deformation of the individual BO6 octahedra due to local elastic fields. As a result, such A-site doping intensifies the initial structural polarity at high temperatures and prevails the enlargement of the polar fraction at low temperatures. A-site doping with smaller cations (Sr2+, La3+), regardless if they are isovalent or aliovalent to Pb2+, increases the correlation length of antiferrodistortive order (BO6 tilts), which in turn assists the development of double-perovskite structure with coherent local polar distortions. A-site doping with aliovalent cations (Bi3+) having the same outermost electron shell and ionic radius as the host A-site Pb2+ cations leads to

  18. The effect of chemical variations on the structural polarity of relaxor ferroelectrics studied by resonance Raman spectroscopy.

    PubMed

    Rohrbeck, A; de la Flor, G; Aroyo, M I; Gospodinov, M; Bismayer, U; Mihailova, B

    2016-11-30

    Resonance Raman spectroscopy was applied to doped PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 relaxor ferroelectrics, to better understand the effect of composition disorder on the mesoscopic-scale polar order in complex perovskite-type (ABO3) ferroelectrics. The excitation photon energy used was 3.8 eV, which is slightly above the energy gap and corresponds to the maximum of the optical dielectric permittivity. Group-theory analysis reveals that the resonance Raman scattering (RRS) observed under these conditions is allowed only in polar crystal classes. Therefore, RRS is dominated by the atomic dynamics of nanoregions with coherent polar distortions, which considerably facilitates the comparison of polar order in various compounds. The results show that A-site doping (Ba(2+), Sr(2+), La(3+), Bi(3+)) has significantly stronger effect on the structural polarity than the introduction of a third element at the B site (Nb(5+) or Sn(4+) doped in PbSc0.5Ta0.5O3). The A-site substitution by cations that in contrast to Pb(2+) have isotropic outermost electron shells disturbs the system of lone-pair electrons, thus reducing the correlation length of coupled polar distortions and the strength of the electric field associated with the mean polarization of polar nanoregions. A-site doping with larger cations (Ba(2+)) augments the polar deformation of the individual BO6 octahedra due to local elastic fields. As a result, such A-site doping intensifies the initial structural polarity at high temperatures and prevails the enlargement of the polar fraction at low temperatures. A-site doping with smaller cations (Sr(2+), La(3+)), regardless if they are isovalent or aliovalent to Pb(2+), increases the correlation length of antiferrodistortive order (BO6 tilts), which in turn assists the development of double-perovskite structure with coherent local polar distortions. A-site doping with aliovalent cations (Bi(3+)) having the same outermost electron shell and ionic radius as the host A

  19. Determination of 60° polarization nanodomains in a relaxor-based ferroelectric single crystal

    SciTech Connect

    Kim, Kyou-Hyun; Zuo, Jian-Min; Payne, David A.

    2015-10-19

    Here, we report a determination of monoclinic nanodomains in PMN-xPT with x = 31%PT by using scanning convergent beam electron diffraction (SCBED). We show the presence of 60 ± α degree nanodomains with Cm-like symmetry as well as significant variations (α) in local polarization directions across lengths of ∼10 nm. The principle of our technique is general and can be applied for the determination of polarization domains in other ferroelectric materials of different symmetry.

  20. Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

    SciTech Connect

    Tong, S.; Narayanan, M.; Ma, B.; Koritala, R. E.; Liu, S.; Balachandran, U.; Shi, D.

    2011-02-01

    Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. The total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.

  1. Structured diffuse scattering and polar nano-regions in the Ba(Ti{sub 1-} {sub x} Sn {sub x} )O{sub 3} relaxor ferroelectric system

    SciTech Connect

    Liu Yun; Withers, Ray L. Wei Xiaoyong; Fitz Gerald, John D.

    2007-03-15

    The observation via electron diffraction of relatively sharp G{+-}{l_brace}001{r_brace}* sheets of diffuse intensity arising from the large amplitude excitation of inherently polar, transverse optical modes of distortion in Ba(Ti{sub 1-} {sub x} Sn {sub x} )O{sub 3} (BTS), 0.1{<=}x{<=}0.5, samples, both at room temperature as well as liquid nitrogen temperature, shows that the polar nano-regions (PNRs) in these relaxor ferroelectric materials correspond to the same highly anisotropic <001> chain dipoles as are characteristic of the normal ferroelectric end member BaTiO{sub 3} itself. The correlation length along the chain of these 1-d PNRs can, in principle, be determined from the width of the observed {l_brace}001{r_brace}* diffuse sheets in reciprocal space and is estimated to be at least 5 nm even for the higher x samples. The distribution of the substitutional Sn ions thus appears to have only a minor effect upon the correlation length along the <001> chain dipole directions. It is suggested that the role of the dopant Sn ions is not to directly induce PNRs but rather to set up random local strain fields preventing the condensation of long wavelength homogeneous strain distortions of the unit cell thereby suppressing transverse correlations of the <001> chain dipoles and the development of long-range ordered ferroelectric state/s. - Graphical abstract: The characteristic G{+-}{l_brace}001{r_brace}* sheets of diffuse intensity characteristic of the relaxor ferroelectric Ba(Ti{sub 1-} {sub x} Sn {sub x} )O{sub 3} (BTS), 0.1{<=}x{<=}0.5, system along with the inherently polar, transverse optical modes of distortion responsible.

  2. Fabrication and characterization of relaxor ferroelectric PbFe1/2Ta1/2O3 thin film: A comparison with ceramics

    NASA Astrophysics Data System (ADS)

    Martínez V, R.; Kumar, Ashok; Sanchez, Dilsom A.; Palai, R.; Katiyar, R. S.

    2010-10-01

    Highly oriented Pb(Fe1/2Ta1/2)O3 (PFT) film is fabricated on conducting La0.67Sr0.33CoO3 coated (100) MgO substrate using pulsed laser deposition technique. The x-ray diffraction pattern shows single phase compound having preferential orientation along (100) plane. Surface topography of the film indicates homogeneous distribution of grains with an average grain size ˜55 nm. Broad dielectric dispersion, high dielectric diffusivity, and moderate dielectric loss are observed in the vicinity of wide range of temperatures and frequencies. A reasonably good shift in dielectric maximum temperature (˜30 K) is observed from 1 to 500 kHz suggests relaxor nature of film in this frequency range. At the same time, diffuse dielectric dispersion is seen above 500 kHz indicating diffuse ferroelectric phase transition. Dielectric data fallows the nonlinear Vogel-Fulcher relation below 500 kHz applied frequency which support the relaxor nature of PFT film. The ferroelectric hysteresis loop and butterfly loop show well defined saturated loop below freezing temperature (Tf) (˜150 K). A large shift in dielectric maximum temperature (Tm), i.e., around 75 K is observed compared to bulk counterpart that may be due to misfit strain across substrate-bottom electrode-film interface and in plane compressive strain in the film.

  3. Piezoelectric response enhancement in the proximity of grain boundaries of relaxor-ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Brewer, Steven; Deng, Carmen; Callaway, Connor; Kalinin, Sergei V.; Vasudevan, Rama K.; Bassiri-Gharb, Nazanin

    2016-06-01

    The influence of surface morphology on the local piezoelectric response of highly (100)-textured 0.70PbMg2/3Nb1/3O3-0.30PbTiO3 thin films is studied using piezoresponse force microscopy in band-excitation mode. The local electromechanical response is mostly suppressed in direct proximity of the grain boundaries. However, within 100-200 nm of the grain boundary, the piezoresponse is substantially enhanced, before decaying again within a region at the center of the grain itself. Nested piezoresponse hysteresis curves confirm the influence of topography descriptors on parameters affecting the hysteresis loop shape. The enhancement of the electromechanical response is rationalized through reduced lateral clamping in the grains with deep trenched boundaries, as well as an expected lower energy for complex domain wall structures, due to curved ferroelectric surfaces. The lower piezoresponse at the center of the grain is assigned to the lateral clamping by the surrounding piezoelectric material.

  4. Variation of Piezoelectric properties and mechanisms across the relaxor-like/Ferroelectric continuum in BiFeO3- (K0.5Bi0.5)TiO3-PbTiO3 ceramics.

    PubMed

    Bennett, James; Shrout, Thomas R; Zhang, Shujun; Owston, Heather E; Stevenson, Tim J; Esat, Faye; Bell, Andrew J; Comyn, T P

    2015-01-01

    1- x - y)BiFeO3-x(K0.5Bi0.5)TiO3-yPbTiO3 (BFKBT- PT) piezoelectric ceramics were investigated across the compositional space and contrasted against the xBiFeO3- (1-x)(K0.5Bi0.5)TiO3 (BF-KBT) system, whereby a range of relaxor-like/ferroelectric behavior was observed. Structural and piezoelectric properties were closely related to the PbTiO3 concentration; below a critical concentration, relaxor-like behavior was identified. The mechanisms governing the piezoelectric behavior were investigated with structural, electrical, and imaging techniques. X-ray diffraction established that longrange non-centrosymmetric crystallographic order was evident above a critical PbTiO3 concentration, y > 0.1125. Commensurate with the structural analysis, electric-field-induced strain responses showed electrostrictive behavior in the PbTiO3-reduced compositions, with increased piezoelectric switching in PbTiO3-rich compositions. Positive-up-negative-down (PUND) analysis was used to confirm electric-field-induced polarization measurements, elucidating that the addition of PbTiO3 increased the switchable polarization and ferroelectric ordering. Piezoresponse force microscopy (PFM) of the BF-KBT-PT system exhibited typical domain patterns above a critical PbTiO3 threshold, with no ferroelectric domains observed in the BF-KBT system in the pseudocubic region. Doping of BiFeO3-PbTiO3 has been unsuccessful in the search for hightemperature materials that offer satisfactory piezoelectric properties; however, this system demonstrates that the partial substitution of alternative end-members can be an effective method. The partial substitution of PbTiO3 into BF-KBT enables long-range non-centrosymmetric crystallographic order, resulting in increased polar order and TC, compared with the pseudocubic region. The search for novel high-temperature piezoelectric ceramics can therefore exploit the accommodating nature of the perovskite family, which allows significant variance in chemical and physical

  5. Microscopic model for the formation of nanodomains in relaxor materials

    NASA Astrophysics Data System (ADS)

    Marqués, Manuel I.; Aragó, Carmen

    2010-02-01

    A microscopic relaxor model is presented and its properties are studied by means of numerical simulations. No “a priori” random interactions or random fields are considered. The sole interaction of mobile charges with the dipoles of a highly polarizable medium is responsible for the appearance of typical relaxor properties such as a smeared transition, a glassy ground state with no macroscopic polarization, an external field frequency-dependent dielectric constant, and a field-induced ferroelectric behavior. The model shows no statistical difference between the relaxor and the ferroelectric formation of polar nanoregions at high temperature. However, for the relaxor, there is a temperature (which we associate with the Burns temperature) below which some dipoles, neighbors to the charges, get frozen with a net square polarization different from zero. These dipoles are the precursors of stable boundaries from which ferroelectric clusters grow when approaching the glassy phase. These frozen dipoles are responsible for the frequency dispersion of the dielectric constant and for the smearing of the transition.

  6. Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Rao, Vaibhav; Dutta, Soma; Barvat, Arun; Pal, Prabir; Tomar, M.; Gupta, Vinay; Scott, J. F.; Kumar, Ashok

    2016-07-01

    We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V-1) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

  7. Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3.

    PubMed

    Borkar, Hitesh; Rao, Vaibhav; Dutta, Soma; Barvat, Arun; Pal, Prabir; Tomar, M; Gupta, Vinay; Scott, J F; Kumar, Ashok

    2016-07-01

    We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V(-1)) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi(5+) ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research. PMID:27165848

  8. Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Rao, Vaibhav; Dutta, Soma; Barvat, Arun; Pal, Prabir; Tomar, M.; Gupta, Vinay; Scott, J. F.; Kumar, Ashok

    2016-07-01

    We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel–Fulcher (VF) relations. The material shows slim polarization–hysteresis (P–E) loops and excellent displacement coefficients (d 33 ~ 233 pm V‑1) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

  9. Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3.

    PubMed

    Borkar, Hitesh; Rao, Vaibhav; Dutta, Soma; Barvat, Arun; Pal, Prabir; Tomar, M; Gupta, Vinay; Scott, J F; Kumar, Ashok

    2016-07-01

    We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V(-1)) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi(5+) ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

  10. Strontium-induced ferroelectriclike relaxor behavior in Bi-based pyrochlores

    NASA Astrophysics Data System (ADS)

    Du, Huiling; Shi, Xiang

    2010-08-01

    The dielectric properties of stoichiometric dense ceramics (Bi1.5Zn0.5-xSrx)(Ti1.5Nb0.5)O7 (BZSTN, x=0-0.5) have been investigated as a function of temperature and frequency. A significant relaxation behavior at about 250 °C is induced when moderate Sr2+ is substituted with Zn2+ in Bi1.5Zn0.5Ti1.5Nb0.5O7 (BZTN) ceramics. The observation of hysteretic behavior in the P versus E curves shows the existence of a polar state. The ferroelectriclike relaxor behavior arises mainly from the dynamic response of the micropolar clusters, which exist in the off-center ions doped paraelectric. The ultrahigh permittivity of 245 at ambient temperature could be very promising for integrated capacitors and microwave resonators.

  11. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    PubMed

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range. PMID:25996244

  12. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    PubMed

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

  13. Role of random electric fields in relaxors

    PubMed Central

    Phelan, Daniel; Stock, Christopher; Rodriguez-Rivera, Jose A.; Chi, Songxue; Leão, Juscelino; Long, Xifa; Xie, Yujuan; Bokov, Alexei A.; Ye, Zuo-Guang; Ganesh, Panchapakesan; Gehring, Peter M.

    2014-01-01

    PbZr1–xTixO3 (PZT) and Pb(Mg1/3Nb2/3)1–xTixO3 (PMN-xPT) are complex lead-oxide perovskites that display exceptional piezoelectric properties for pseudorhombohedral compositions near a tetragonal phase boundary. In PZT these compositions are ferroelectrics, but in PMN-xPT they are relaxors because the dielectric permittivity is frequency dependent and exhibits non-Arrhenius behavior. We show that the nanoscale structure unique to PMN-xPT and other lead-oxide perovskite relaxors is absent in PZT and correlates with a greater than 100% enhancement of the longitudinal piezoelectric coefficient in PMN-xPT relative to that in PZT. By comparing dielectric, structural, lattice dynamical, and piezoelectric measurements on PZT and PMN-xPT, two nearly identical compounds that represent weak and strong random electric field limits, we show that quenched (static) random fields establish the relaxor phase and identify the order parameter. PMID:24449912

  14. Octahedral tilt transitions in the relaxor ferroelectric Na{sub 1/2}Bi{sub 1/2}TiO{sub 3}

    SciTech Connect

    Meyer, Kai-Christian Gröting, Melanie; Albe, Karsten

    2015-07-15

    The kinetics of octahedral tilt transitions in the lead-free relaxor material sodium bismuth titanate Na{sub 1/2}Bi{sub 1/2}TiO{sub 3} (NBT) is investigated by electronic structure calculations within density functional theory. Energy barriers for transitions between tetragonal, rhombohedral and orthorhombic tilts in cation configurations with [001]- and [111]-order on the A-sites are determined by nudged elastic band calculations. By tilting entire layers of octahedra simultaneously we find that the activation energy is lower for structures with 001-order compared to such with 111-order. The energetic coupling between differently tilted layers is, however, negligibly small. By introducing a single octahedral defect we create local tilt disorder and find that the deformation energy of the neighboring octahedra is less in a rhombohedral than in a tetragonal structure. By successively increasing the size of clusters of orthorhombic defects in a rhombohedral matrix with 001-order, we determine a critical cluster size of about 40 Å . Thus groups of about ten octahedra can be considered as nuclei for polar nanoregions, which are the cause of the experimentally observed relaxor behavior of NBT. - Graphical abstract: Nine orthorhombic oxygen octahedral tilt defects in a rhombohedral tilt configuration. - Highlights: • Chemical order influences energy barriers of octahedral tilt transitions. • The octahedral deformation energy is lower in rhombohedral phases. • Tilt defect clusters are more likely in rhombohedral structures. • Tilt defect clusters can act as nuclei for polar nanoregions.

  15. Blockage of domain growth by nanoscale heterogeneities in a relaxor ferroelectric Sr{sub 0.61}Ba{sub 0.39}Nb{sub 2}O{sub 6}

    SciTech Connect

    Pertsev, N. A.; Gainutdinov, R. V.; Bodnarchuk, Ya. V.; Volk, T. R.

    2015-01-21

    The growth of localized subsurface domains in a relaxor ferroelectric Sr{sub 0.61}Ba{sub 0.39}Nb{sub 2}O{sub 6} is studied using the technique of piezoresponse force microscopy (PFM). Ferroelectric domains are created by applying moderate voltages of 10–50 V to the conductive tip of a scanning force microscope brought into contact with a nonpolar face of a Sr{sub 0.61}Ba{sub 0.39}Nb{sub 2}O{sub 6} crystal. PFM images of written domains are acquired and analyzed quantitatively to determine the domain length along the polar axis and its width in the transverse direction. The dependences of domain sizes on the applied voltage, pulse duration, and the time passed after completion of the voltage pulse are reported and analyzed theoretically. It is shown that the observed kinetics of domain growth can be explained by the creep of domain boundaries occurring in the presence of random electric fields inherent in Sr{sub 0.61}Ba{sub 0.39}Nb{sub 2}O{sub 6}. The comparison of measured domain sizes with their equilibrium values calculated with the aid of the thermodynamic theory demonstrates that the growth of subsurface domains in Sr{sub 0.61}Ba{sub 0.39}Nb{sub 2}O{sub 6} is blocked by nanoscale heterogeneities characteristic of this relaxor ferroelectric. These results may have important implications for the development of nonlinear optical devices based on nanoheterogeneous ferroelectrics.

  16. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

    PubMed

    Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

    2014-12-24

    The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

  17. Relaxor-like ferroelectric behaviour favoured by short-range B-site ordering in 10% Ba{sup 2+} substituted MgFe{sub 2}O{sub 4}

    SciTech Connect

    Chithra Lekha, P.; Ramesh, G.; Revathi, V.; Subramanian, V.

    2014-05-01

    Graphical abstract: - Highlights: • Mechanism driving polarization in MgFe{sub 2}O{sub 4} is the Maxwell–Wagner polarization. • But Raman studies confirm the existence of local P4{sub 1}22/P4{sub 3}22 symmetry in MgFe{sub 2}O{sub 4}. • Ba{sup 2+} substitution increases ferroelectric ordering, ΔT{sub m} span, and masks electronic contribution. - Abstract: Using the molten salt method, pristine and Ba{sup 2+} substituted MgFe{sub 2}O{sub 4} are prepared. The relaxor-like behaviour observed in the dielectric dispersion indicates the existence of B-site short-range ordering with the local P4{sub 1}22/P4{sub 3}22 symmetry which is confirmed by the Raman spectroscopy. The paper further analyses the origin of polarization using Maxwell–Wagner fit and Nyquist plot. This work suggests a possible way to increase the relaxor-like ferroelectric ordering, larger span of relaxation temperature (ΔT{sub m}) and the effective masking of electronic contribution by the substitution of Ba{sup 2+} ion.

  18. Influence of long-range cation order on relaxor properties of doped Pb(Mg1/3Nb2/3)O3 ceramics

    NASA Astrophysics Data System (ADS)

    Zhao, X.; Qu, W.; Tan, X.; Bokov, A. A.; Ye, Z.-G.

    2009-04-01

    The 1:1 B -site cation order in Pb(Mg1/3Nb2/3)O3 relaxor ferroelectric ceramics was significantly enhanced by doping of minor amounts of La3+ , Sc3+ , or W6+ (less than 3at.% ) combined with a slow cooling procedure. Transmission electron microscopy examination confirmed the size increase of the cation-ordered regions embedded in a disordered matrix in the samples that were slowly cooled after sintering. The average cation ordering parameter (S) determined from x-ray diffraction data in these partially ordered samples was about 0.3-0.4. The ferroelectric properties and dielectric relaxation were compared in partially ordered and disordered (S=0) samples with the same composition. It was found that typical relaxor behavior was preserved in partially ordered ceramics. Furthermore, the temperature and diffuseness of the characteristic relaxor permittivity peak and the parameters of dielectric relaxation (in particular, the distribution of relaxation times and the Vogel-Fulcher freezing temperature) were practically independent of S . In contrast, the diffuseness of the phase transition from the ferroelectric phase (induced by external electric field) to the ergodic relaxor phase appeared to be much larger in the disordered samples than in the partially ordered ones (this diffuseness was assessed using pyroelectric current and ferroelectric hysteresis loops). These results suggest that cation ordering did not influence the behavior of polar nanoregions which are responsible for the dielectric response in the ergodic relaxor phase but significantly influenced the ferroelectric phase transition. The results are interpreted in terms of different types of polar regions in the disordered matrix and cation-ordered domains.

  19. Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ piezoelectric ceramics

    SciTech Connect

    Sapper, Eva; Dittmer, Robert; Rödel, Jürgen; Damjanovic, Dragan; Erdem, Emre; Keeble, David J.; Jo, Wook; Granzow, Torsten

    2014-09-14

    Aging of piezoelectric properties was investigated in lead-free (1–x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ doped with 1at.% Fe. The relaxor character of the un-poled material prevents macroscopic aging effects, while in the field-induced ferroelectric phase aging phenomena are similar to those found in lead zirconate titanate or barium titanate. Most prominent aging effects are the development of an internal bias field and the decrease of switchable polarization. These effects are temperature activated, and can be explained in the framework of defect complex reorientation. This picture is further supported by electron paramagnetic resonance spectra indicating the existence of (Fe{sub Ti}´-V{sub O}{sup ••}){sup •} defect complexes in the Fe-doped material.

  20. Electric-field-induced local structural phenomena in relaxor ferroelectric PbSc(0.5)Nb(0.5)O3 near the intermediate temperature T* studied by Raman spectroscopy.

    PubMed

    Steilmann, T; Maier, B J; Gospodinov, M; Bismayer, U; Mihailova, B

    2014-04-30

    Raman spectroscopy at different temperatures and under an external electric field E was applied to PbSc0.5Nb0.5O3 single crystals in order to gain further insights into the mesoscopic-scale coupling processes in perovskite-type (ABO3) relaxor ferroelectrics. Parallel and cross-polarized Raman spectra were collected between 800-80 K with E applied along the cubic [1 0 0], [1 1 0] or [1 1 1] crystallographic directions. The analysis was focused on the field-induced changes in the temperature evolution of three low-energy phonon modes: the Pb-localized mode near 50 cm(-1), the Pb-BO3 translation mode near 150 cm(-1), and the B-cation-localized mode near 250 cm(-1). The results show that competitive ferroelectric (FE) and antiferroelectric (AFE) coupling exists within the system of off-centred Pb(2+) cations, within the system of off-centred B-site cations as well as between off-centred Pb(2+) and B-site cations. The strong AFE-type coupling between Pb(2+) cations along the cubic body diagonal significantly influences the coupling between the B-site cations via the Pb-BO3 mode and results in AFE-type behaviour of the 'microscopic' T* determined from the B-cation-localized mode near 250 cm(-1), which explains the previously reported non-trivial field dependence of the 'macroscopic' characteristic temperatures: the temperature of the dielectric-permittivity maximum Tm, T*, and the Burns temperature TB. The comparative analysis between PbSc0.5Nb0.5O3 and PbSc0.5Ta0.5O3 indicates that two major displacive order parameters couple to form a relaxor state in B-site complex perovskites: the FE order associated with polar shifts of B-site cations and the AFE order associated with polar shifts of A-site cations. The latter penetrates through both polar and non-polar regions, but it is highly frustrated due to the high density of translation-symmetry faults in the chemical NaCl-type B-site order. The frustrated AFE order of off-centred A-site cations might

  1. Electric field effect of relaxor ferroelectric (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 crystals near morphotropic phase boundary composition probed by Brillouin scattering

    NASA Astrophysics Data System (ADS)

    Aftabuzzaman, Md; Kojima, Seiji

    2016-07-01

    The relaxor ferroelectric (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x = 0.30, PMN-30PT) single crystal was studied under the zero field and the externally applied dc electric field by using micro-Brillouin scattering and dielectric spectroscopies over a wide temperature range of 303-773 K. The noticeable thermal hysteresis of longitudinal acoustic (LA) shift (νB) was observed between zero field heating and zero field cooling processes. Under the electric field of 0.5 kV/cm along the [001] axis, the LA mode splitting was observed in νB due to the coexistence of ferroelectric macrodomain and nanodomain states caused by the random field, and in dielectric measurements the monoclinic (M) and tetragonal phases were appeared between rhombohedral and cubic phases. The LA mode splitting and M phase disappeared under the field of 1.0 kV/cm. The electric field dependence of LA velocity was studied at 304 K. The critical end point of the PMN-30PT single crystal was investigated.

  2. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics

    PubMed Central

    Bintachitt, P.; Jesse, S.; Damjanovic, D.; Han, Y.; Reaney, I. M.; Trolier-McKinstry, S.; Kalinin, S. V.

    2010-01-01

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm3 volumes, approximately 106 times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms. PMID:20368462

  3. Behavior of highly deformable relaxor-ferroelectric-based ceramics in an electric field

    NASA Astrophysics Data System (ADS)

    Talanov, M. V.; Reznichenko, L. A.

    2013-10-01

    The deformation characteristics of multicomponent barium-doped piezoelectric ceramics mPbMg1/3Nb2/3O3- n PbNi1/3Nb2/3O3- y PbZn1/3Nb2/3O3- x PbTiO3 are studied in electric fields E = 0-12 kV/cm. Anomalies are detected in the dependences of elastic strain ξ3 and piezoelectric modulus d {33/eff} on the external dc electric field. The history of the materials is shown to affect the change of piezoelectric modulus d {33/eff} in an electric field. The revealed dependences are used to propose a method to increase the efficiency of operation of piezoelectric actuators.

  4. Composition dependence of the diffuse scattering in the relaxor ferroelectric compound (1-x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (0{<=}x{<=}0.40)

    SciTech Connect

    Matsuura, M.; Hirota, K.; Gehring, P. M.; Ye, Z.-G.; Chen, W.; Shirane, G.

    2006-10-01

    We have used neutron diffraction to characterize the diffuse scattering in five single crystals of the relaxor ferroelectric (1-x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (PMN-xPT) with x=0, 10, 20, 30, and 40%. The addition of ferroelectric PbTiO{sub 3} modifies the well-known 'butterfly' and 'ellipsoidal' diffuse scattering patterns observed in pure PMN (x=0), which are believed to be associated with the presence of randomly oriented polar nanoregions. In particular, the anisotropy of the diffuse scattering diminishes as the PT content increases. The spatial correlation length {xi} along the [110] direction derived from the width of the diffuse scattering at room temperature increases from 12.6 A for PMN to 350 A for PMN-20%PT. In addition, the diffuse scattering intensity at q=0 grows and reaches a maximum value around the morphotropic phase boundary (MPB), which suggests that it is proportional to the dielectric susceptibility. Beyond x=30%, a concentration very close to the MPB, no diffuse scattering is observed below T{sub C}, and well-defined critical behavior appears near T{sub C}. By contrast, the diffuse scattering for x{<=}20% persists down to low temperatures, where the system retains an average cubic structure (T{sub C}=0). Finally, the anisotropic soft transverse optic (TO) modes observed in PMN are found to be isotropic for PMN-30%PT, which strongly suggests a connection between the anisotropic diffuse scattering and the TO modes.

  5. Losses in Ferroelectric Materials

    PubMed Central

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  6. Continuous cross-over from ferroelectric to relaxor state and piezoelectric properties of BaTiO3-BaZrO3-CaTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Benabdallah, F.; Veber, P.; Prakasam, M.; Viraphong, O.; Shimamura, K.; Maglione, M.

    2014-04-01

    Optimal properties like piezoelectricity can be found in polarizable materials for which the structure changes sharply under small composition variations in the vicinity of their morphotropic phase boundary or the triple point in their isobaric temperature-composition phase diagram. In the latter, lead-free (Ba0.850Ca0.150)(Ti0.900Zr0.100)O3 ceramics exhibit outstanding piezoelectric coefficients. For the first time, we report the growth of piezoelectric lead-free single crystals in the BaTiO3-BaZrO3-CaTiO3 pseudo-ternary system. The stoichiometry control in the CaO-BaO-TiO2-ZrO2 solid solution led to single crystals with various compositions ranging from (Ba0.857Ca0.143)(Ti0.928Zr0.072)O3 to (Ba0.953Ca0.047)(Ti0.427Zr0.573)O3. We evidenced a continuous cross-over from a ferroelectric state at high titanium content to a relaxor one on increasing the zirconium content. Such a property tuning is rather seldom observed in lead-free ferroelectrics and confirms what was already reported for ceramics. Single crystal with (Ba0.838Ca0.162)(Ti0.854Zr0.146)O3 composition, which has been grown and oriented along [001] crystallographic direction, displayed electromechanical coefficients d31 and k31 of 93 pC.N-1 and 0.18, respectively, near the room temperature (T = 305 K).

  7. Continuous cross-over from ferroelectric to relaxor state and piezoelectric properties of BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} single crystals

    SciTech Connect

    Benabdallah, F.; Veber, P. Prakasam, M.; Viraphong, O.; Maglione, M.; Shimamura, K.

    2014-04-14

    Optimal properties like piezoelectricity can be found in polarizable materials for which the structure changes sharply under small composition variations in the vicinity of their morphotropic phase boundary or the triple point in their isobaric temperature-composition phase diagram. In the latter, lead-free (Ba{sub 0.850}Ca{sub 0.150})(Ti{sub 0.900}Zr{sub 0.100})O{sub 3} ceramics exhibit outstanding piezoelectric coefficients. For the first time, we report the growth of piezoelectric lead-free single crystals in the BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} pseudo-ternary system. The stoichiometry control in the CaO-BaO-TiO{sub 2}-ZrO{sub 2} solid solution led to single crystals with various compositions ranging from (Ba{sub 0.857}Ca{sub 0.143})(Ti{sub 0.928}Zr{sub 0.072})O{sub 3} to (Ba{sub 0.953}Ca{sub 0.047})(Ti{sub 0.427}Zr{sub 0.573})O{sub 3}. We evidenced a continuous cross-over from a ferroelectric state at high titanium content to a relaxor one on increasing the zirconium content. Such a property tuning is rather seldom observed in lead-free ferroelectrics and confirms what was already reported for ceramics. Single crystal with (Ba{sub 0.838}Ca{sub 0.162})(Ti{sub 0.854}Zr{sub 0.146})O{sub 3} composition, which has been grown and oriented along [001] crystallographic direction, displayed electromechanical coefficients d{sub 31} and k{sub 31} of 93 pC.N{sup −1} and 0.18, respectively, near the room temperature (T = 305 K)

  8. Electric field cycling behavior of ferroelectric hafnium oxide.

    PubMed

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  9. Phase diagram and skin effect of the relaxor ferroelectric (1-x)Pb(Mg1/3Nb2/3)O3+xPbTiO3

    NASA Astrophysics Data System (ADS)

    Gehring, Peter; Phelan, Daniel; Rodriguez, Efrain; Ye, Zuo-Guang

    2012-02-01

    We revisit the phase diagram of the relaxor ferroelectric PMN-xPT using neutron powder diffraction to test suggestions that defects in the oxygen stoichiometry and/or strain affect the ground state crystal structure. Two identical sets of PMN-xPT powders were prepared with x=0.10, 0.20, 0.30, and 0.40. One set was annealed in air at 873K for 2h. For a given composition and temperature the same structural phase is observed in each set, thus indicating that the effects of strain and oxygen vacancies are minimal. But the distortions measured in the annealed samples are consistently smaller than those in the as-grown samples. In addition, the average grain size of the annealed samples is approximately twice that of the as-grown samples (1.2±0.6 microns vs 0.6±0.3 microns). This result is consistent with a skin effect in which Ti-poor bulk crystals show significantly smaller distortions than do powders of the same composition. The diffraction patterns for both the as-grown and annealed samples with compositions x=0.10 and x=0.20 are best refined using the monoclinic Cm space group, which agrees with recent speculation by Singh et al., Phys. Rev. B 74, 024101 (2006).

  10. Optical evidences for an intermediate phase in relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaolong; Zhang, Jinzhong; Xu, Guisheng; Jiang, Kai; Hu, Zhigao; Chu, Junhao

    2016-02-01

    The mechanism of low-temperature structural transformation and evolution of polar nano-structures in relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-xPbTiO3 (x = 0.33, 0.35, and 0.42) single crystals have been investigated with the aid of temperature dependent low-wavenumber Raman scattering (LWRS) and photoluminescence (PL) spectra. The E(TO1) phonon mode reveals the characteristic relaxational polarization fluctuations associated with the reorientation of either polar nano-regions or polar nano-domains. It was found that these mechanisms are not independent and they can be ascribed to the phonon localization. In addition, a short-range monoclinic phase (Mc) can be found below 250 K in the tetragonal phase region by LWRS, which is always associated with the morphotropic phase boundary (MPB) and excellent electromechanical properties. It is interesting that PL spectra confirm these results. The present work indicates that external field modulation and change of composition can result in the monoclinic phase and co-existence of multi-phase.

  11. Raman scattering study on relaxor ferroelectric Pb(In1/2Nb1/2)-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Kim, Tae Hyun; Kojima, Seiji; Ko, Jae-Hyeon

    2014-10-01

    The vibrational property of relaxor ferroelectric Pb(In1/2Nb1/2)-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals was investigated by using Raman scattering. The angular dependences of two Raman bands, one located at ˜50 cm-1 and the other at ˜560 cm-1, were investigated in the paraelectric phase where no Raman bands are allowed in the average symmetry. The angular variation of the Raman intensity of the strong low-frequency mode at ˜50 cm-1 was compatible with the F 2 g mode of symmetry, indicating that this mode could be attributed to the 1:1 chemical order at the B-site in PIN-PMN-PT. The high-frequency Raman mode at ˜560 cm-1 exhibited an intensity modulation consistent with the rhombohedral R3 m symmetry, suggesting that this mode was related to polar nanoregions. The intensity ratio of the depolarized to the polarized component of this high-frequency mode showed an abrupt change when PIN-PMN-PT underwent a structural phase transition into the rhombohedral phase.

  12. Domain switching mechanisms in polycrystalline ferroelectrics with asymmetric hysteretic behavior

    NASA Astrophysics Data System (ADS)

    Anton, Eva-Maria; García, R. Edwin; Key, Thomas S.; Blendell, John E.; Bowman, Keith J.

    2009-01-01

    A numerical method is presented to predict the effect of microstructure on the local polarization switching of bulk ferroelectric ceramics. The model shows that a built-in electromechanical field develops in a ferroelectric material as a result of the spatial coupling of the grains and the direct physical coupling between the thermomechanical and electromechanical properties of a bulk ceramic material. The built-in fields that result from the thermomechanically induced grain-grain electromechanical interactions result in the appearance of four microstructural switching mechanisms: (1) simple switching, where the c-axes of ferroelectric domains will align with the direction of the applied macroscopic electric field by starting from the core of each grain; (2) grain boundary induced switching, where the domain's switching response will initiate at grain corners and boundaries as a result of the polarization and stress that is locally generated from the strong anisotropy of the dielectric permittivity and the local piezoelectric contributions to polarization from the surrounding material; (3) negative poling, where abutting ferroelectric domains of opposite polarity actively oppose domain switching by increasing their degree of tetragonality by interacting with the surrounding domains that have already switched to align with the applied electrostatic field. Finally, (4) domain reswitching mechanism is observed at very large applied electric fields, and is characterized by the appearance of polarization domain reversals events in the direction of their originally unswitched state. This mechanism is a consequence of the competition between the macroscopic applied electric field, and the induced electric field that results from the neighboring domains (or grains) interactions. The model shows that these built-in electromechanical fields and mesoscale mechanisms contribute to the asymmetry of the macroscopic hysteretic behavior in poled samples. Furthermore, below a

  13. Reversible phase transition and relaxor behavior in Te2V2O9 single crystals grown by Czochralski technique

    NASA Astrophysics Data System (ADS)

    Shet, Tukaram; Varma, K. B. R.

    2016-09-01

    Te2V2O9 single crystals were grown along the polar c-axis via the Czochralski crystal growth technique. Dielectric studies carried out along the polar axis in a wide temperature range at different frequencies confirmed the relaxor nature of the Te2V2O9 single crystals. Temperature dependent polarized light optical microscopy along a-axis established a reversible phase transition around 614 K. Relaxor nature of Te2V2O9 was attributed to the compositional heterogeneity at micro/nano scale within the grown crystal as vanadium was observed to be present in different oxidation states by X-ray photoelectron spectroscopic studies.

  14. Domain morphology from k -space spectroscopy of ferroelectric crystals

    NASA Astrophysics Data System (ADS)

    Voelker, Uwe; Betzler, Klaus

    2006-10-01

    A nonlinear-optical investigation technique for the domain structuring in ferroelectric crystals is reported. Noncollinear optical frequency doubling in a quasiphase-matched scheme allows for conclusions on the k -space representation of the domain morphology or—putting it in other terms—on the k -space representation of the correlation lengths (k-space spectroscopy). As an example, the ferroelectric-to-paraelectric phase transition of the relaxor ferroelectric strontium-barium niobate (SBN) is studied. One important result is that homogeneously poled crystals of SBN do not uniquely go through the phase transition as commonly assumed. Instead, the correlation length shows a characteristic anisotropic behavior in the phase-transition region.

  15. High-resolution structure studies and magnetoelectric coupling of relaxor multiferroic Pb (F e0.5N b0.5) O3

    NASA Astrophysics Data System (ADS)

    Sim, Hasung; Peets, Darren C.; Lee, Sanghyun; Lee, Seongsu; Kamiyama, T.; Ikeda, K.; Otomo, T.; Cheong, S.-W.; Park, Je-Geun

    2014-12-01

    Pb (F e0.5N b0.5) O3 (PFN), one of the few relaxor multiferroic systems, has a G -type antiferromagnetic transition at TN=143 K and a ferroelectric transition at TC=385 K . By using high-resolution neutron-diffraction experiments and a total scattering technique, we paint a comprehensive picture of the long- and short-range structures of PFN: (i) a clear sign of short-range structural correlation above TC, (ii) no sign of the negative thermal expansion behavior reported in a previous study, and (iii) clearest evidence thus far of magnetoelectric coupling below TN. We conclude that at the heart of the unusual relaxor multiferroic behavior lies the disorder between Fe3 + and Nb5 + atoms. We argue that this disorder gives rise to short-range structural correlations arising from O disorder in addition to Pb displacement.

  16. Ferroelectric and photocatalytic behavior of bismuth ferrite nano wire

    NASA Astrophysics Data System (ADS)

    William, R. V.; Marikani, A.; Madhavan, D.

    2016-05-01

    Multiferroic bismuth ferrite nanowires are prepared through polyol method with an average diameter of 35 nm with a narrow size distribution. The band gap was determined to be 2.10 eV, indicating their potential application as visible-light-response photo catalyst. The magnificent photocatalytic behaviors of BiFeO3 nanowires are understood from the methyl violet degradation under visible light irradiation. Moreover, the nano-wire takes only a lesser time for the diffusion of electron-hole pair from the surface of the sample. Further the BiFeO3 nano-wire was characterized using XRD, SEM, and U-V. The ferroelectric studies of BiFeO3 nano-wire show a frequency dependent property and maximum coercivity of 2.7 V/cm were achieved with a remanent polarization at 0.5 µC/cm2 at the frequency 4 kHz. The coercivity of BiFeO3 nano wire changes with variation of frequency from 1 kHz to 4 kHz.

  17. High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering

    SciTech Connect

    Wang, Xiaolin; Zhang, Le; Hao, Xihong An, Shengli

    2015-05-15

    Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated that the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.

  18. Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3 single crystal.

    PubMed

    Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

    2016-03-01

    A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm(3). This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.

  19. Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3 single crystal.

    PubMed

    Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

    2016-03-01

    A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm(3). This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density. PMID:27036838

  20. Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa){sub 1{minus}x}Ti{sub x}O{sub 3} (x=0{endash}0.3) relaxor ferroelectric thin films on LaNiO{sub 3} electrode buffered Si

    SciTech Connect

    Lin, C.H.; Lee, S.W.; Chen, H.; Wu, T.B.

    1999-10-01

    Highly (100) textured Pb(ScTa){sub 1{minus}x}Ti{sub x}O{sub 3} (x=0{endash}0.3) thin films were grown on LaNiO{sub 3}/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685thinsp{degree}C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0{percent} to 30{percent}, the phase transition temperature (T{sub max}) gradually shifted from {minus}10 to 120thinsp{degree}C with the dielectric constant at T{sub max} increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025. {copyright} {ital 1999 American Institute of Physics.}

  1. Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-Pb(In1/2Nb1/2)O3-PbTiO3 single crystal

    NASA Astrophysics Data System (ADS)

    Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

    2016-03-01

    A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-Pb(In1/2Nb1/2)O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm3. This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.

  2. Electro-optic effect and photoelastic effect of feroelectric relaxors

    NASA Astrophysics Data System (ADS)

    Takeda, Kotaro; Hoshina, Takuya; Takeda, Hiroaki; Tsurumi, Takaaki

    2016-10-01

    To understand the origin of the electro-optic effect (EO-effect) of ferroelectric relaxors, the relationships among the quadratic EO-coefficient, photoelastic coefficient, and electron density were elucidated. The quadratic EO-coefficient is given by the product of the photoelastic and electrostrictive coefficients. Materials consisting of heavy elements normally exhibit high refractive indices and large photoelastic effects, indicating that the photoelastic coefficient increases with electron density of materials. The photoelastic coefficient was calculated as a function of the electron density of materials. The equations derived in this study were experimentally confirmed using lanthanum-added lead-zirconate-titanate (PLZT) transparent ceramics. It was found that the origin of the EO-effect in ferroelectric relaxors was the photoelastic effect coupled with electric-field-induced strain via the piezoelectric and electrostrictive effects.

  3. Study of glassy behavior in 60(Na0.5Bi0.5)TiO3-40SrTiO3 lead-free relaxor

    NASA Astrophysics Data System (ADS)

    Praharaj, S.; Rout, D.; Kar, B. B.; Subramanian, V.

    2016-05-01

    In this report, the glassy behavior of 60(Na0.5Bi0.5)TiO3-40SrTiO3 (NBT-40ST) lead-free perovskite relaxor was studied. The single phase ceramic sample was prepared with cubic symmetry by solid state reaction method. The temperature and frequency dependent dielectric data were analyzed in view point of relaxor and glassy behavior by employing various empirical models such as modified Curie-Weiss law, V-F law, Power law and Cheng's exponential relation. The diffuseness coefficient (γ~1.97) and the frequency dispersion of Tm (temperature corresponding to maximum dielectric constant) manifested strong relaxor behavior of NBT-40ST. The frequency dependent Tm analysis revealed greater interactions between the polar nano islands. Further, the study of dielectric behavior at much higher and lower temperature than Tm provided an idea about the production rate and concentration of these polar islands and distribution of freezing temperatures respectively.

  4. Research Update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Nguyen, Minh D.; Houwman, Evert P.; Dekkers, Matthijn; Nguyen, Chi T. Q.; Vu, Hung N.; Rijnders, Guus

    2016-08-01

    Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (Ureco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

  5. Study of the structure, dielectric and ferroelectric behavior of BaBi4+δTi4O15 ceramics

    NASA Astrophysics Data System (ADS)

    Khokhar, Anita; Goyal, Parveen K.; Thakur, O. P.; Sreenivas, K.

    2016-05-01

    The structure and ferroelectric properties of excess bismuth doped barium bismuth titanate BaBi4+δTi4O15 (δ = 2 - 10 wt.%)) ceramics prepared by solid-state reaction method have been investigated. X-ray diffraction (XRD) confirms the formation of a single phase material with a change in the orthorhombic distortion with varying excess of bismuth content. There is no change in the phase transition temperature (Tm) while the relaxor behaviour has been modified significantly with excess of bismuth doping. Saturated hysteresis loops with high remnant polarization (Pr ~ 12.5 µC/cm2), low coercive fields (Ec ~ 26 kV/cm) are measured and a high piezoelectric coefficient (d33 ~ 29 pC/N) is achieved in poled BaBi4Ti4O15 ceramics prepared with up to 8 wt.% of excess bismuth oxide. The improvement in the ferroelectric properties with increase in the excess bismuth content in BaBi4Ti4O15 ceramics has been explained in terms of changing oxygen vacancy concentration and structural relaxation. Tunable ferroelectric materials can be obtained by manipulating the doping amount of excess bismuth.

  6. Effects of Oxide Seeding Layers on Electrical Properties of Chemical Solution Deposition-Derived Pb(Mg1/3Nb2/3)O3-PbTiO3 Relaxor Thin Films

    NASA Astrophysics Data System (ADS)

    Arai, Takashi; Goto, Yasuyuki; Yanagida, Hiroshi; Sakamoto, Naonori; Ohno, Tomoya; Matsuda, Takeshi; Wakiya, Naoki; Suzuki, Hisao

    2013-09-01

    Relaxor ferroelectrics Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) have attracted considerable attention because of their excellent electrical properties, such as high dielectricity and piezoelectricity, for application to super capacitors, piezoelectric actuators, and so on. It is well known that the electrical properties of ferroelectric thin films depend on several parameters, such as crystal orientation, composition, and residual stress. In this study, the effects of the lead titanate and lanthanum nickel oxide seeding layers on the film orientation, electrical properties, and low-temperature crystallization behavior were investigated for Chemical Solution Deposition (CSD)-derived PMN-PT thin films. As a result, PMN-PT thin films with (001)C- and (111)C-preferred orientations were successfully obtained by designing the seeding layers. Both thin films exhibited very good ferroelectricity because of their good crystallinity and preferred orientation.

  7. Nanoscale piezoelectric and ferroelectric behaviors of seashell by piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Li, Tao; Zeng, Kaiyang

    2013-05-01

    Seashells, the armor of one of the most ancient species, have demonstrated outstanding mechanical properties such as simultaneous strengthening and toughening. The seashells have also been proven to exhibit piezoelectric and ferroelectric properties, which may contribute to their mechanical behaviors and various functionalities. This work has elaborated in more details of the piezoelectric and ferroelectric behaviors of the nacre by using the DART (Dual-AC Resonance Tracking) and vector-PFM (Piezoresponse Force Microscope), as well as the SS-PFM (Switching Spectroscopy PFM) techniques. By using the vector-PFM technique, the local polarization directions of intracrystalline biopolymers are found to be very close to the direction perpendicular to the platelet surface, and it, therefore, shows strong piezoresponse along this direction. On the other hand, the interlamellar biopolymer shows strong piezoresponse in the direction parallel to the platelet surface. This intrinsic piezoelectric property of the biopolymer may be the basis for sensing and actuating during biomineralization process. Besides the piezoresponse, the locations of various biopolymers are also revealed in-situ by using the PFM technique. The ferroelectric behaviors of nacre have been observed by SS-PFM method. Based on the shapes of the ferroelectric hysteresis loops, it is found that the biopolymers in nacre exhibit the similar behaviors to that of the polyvinylidene fluoride (PVDF) based co- or ter-polymers for energy storage applications.

  8. Piezo-/dielectric properties of perovskite-structure high-temperature relaxor ferroelectrics: The Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ternary ceramics

    SciTech Connect

    Li, Tao; Long, Xifa

    2014-03-01

    Graphical abstract: - Highlights: • Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}-based ternary ferroelectric ceramics were prepared by solid-state synthesis method. • Morphotropic phase boundary region has been determined by XRD, di-/piezoelectric properties. • The compositions near MPB region exhibit excellent piezoelectric properties. - Abstract: A new compositional system of relaxor ferroelectrics was investigated based on the high piezoelectricity Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ferroelectric perovskite family. Compositions were fabricated near an estimated morphotropic phase boundary (MPB) of the Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} (PLZNT) ternary system by a two-step synthetic process. Their structures have been analyzed by means of X-ray diffraction technique. On the basis of X-ray powder diffraction, the morphotropic phase boundary (MPB) region for the ternary system was obtained. The Curie temperature T{sub C} of ternary system varied from 240 °C to 330 °C and the coercive fields E{sub c}s > 10 kV/cm. The values of piezoelectric coefficients d{sub 33} vary in the range of 260–450 pC/N with different PZN contents. It is worth noting that the optimum compositions were located at MPB region but near the tetragonal phase. The new PLZNT ceramics exhibit wider range of T{sub C}s and E{sub c}s, making it a promising material for high-powder ultrasound transducers using in a large temperature range.

  9. Near-room temperature relaxor multiferroic

    NASA Astrophysics Data System (ADS)

    Sanchez, Dilsom A.; Kumar, A.; Ortega, N.; Katiyar, R. S.; Scott, J. F.

    2010-11-01

    We report the fabrication and characterization of highly oriented Pb(Zr0.53Ti0.47)0.60(Fe0.5Ta0.5)0.40O3 thin films. Dielectric spectra showed a maximum (Tm) around 350 K for 1 kHz that shifted to higher temperatures (by ˜30 K) with an increase in frequency up to 1 MHz. High dielectric dispersion below and above Tm, low dielectric loss (2%-5%), high dielectric constant (˜1380@1 kHz), ferroelectric polarization, and weak magnetic moment are observed. Real and imaginary dielectric data were fitted with a nonlinear Vogel-Fulcher equation, implying a relaxor nature. The ac conductivity shows frequency-dependent conductivity, low loss, and frequency-dependent kinks near Tm.

  10. Structure-property-performance relationships of new high temperature relaxors for capacitor applications

    NASA Astrophysics Data System (ADS)

    Stringer, Craig J.

    This thesis extends the investigations on perovskite solid solutions based on PbTiO3-Bi(Me',Me")O3 (Me' = Sc3+, Zn2+, Mg2+, Ni2+, In3+ , Fe3+, etc. and Me" = Ti4+, Nb 5+, W6+) systems. The ferroelectric transition temperature (TC) behavior was considered in the tetragonal phase region of the PbTiO 3-Bi(Me',Me")O3 systems. Trends in the TC compositional dependence exhibited three main cases: case 1, a continued increase in transition temperature above the end-member PbTiO3 (495°C); case 2, an increase and then decrease of the transition temperature; and case 3, a continuous decrease in the transition temperature with Bi(Me',Me")O 3 additions. New relaxor materials were developed from the PbTiO3-Bi(Me',Me")O 3 solid solutions; specifically, the Bi(Mg3/4W1/4)O 3-PbTiO3 (BMW-PT) binary solid solution and BiScO3-Pb(Mg 1/3Nb2/3)O3-PbTiO3 (BS-PMN-PT) ternary solid solution were investigated. Permittivity, polarization and pyroelectric measurements were performed on BMW-PT and BS-PMN-PT compositions with respect to temperature with characteristic relaxor behavior observed. The complex solid solution BMW-PT exhibited a morphotropic phase boundary at ˜48 mol% PbTiO3 with a corresponding TC of 205°C. On further structural analysis with diffraction contrast transmission electron microscopy along with x-ray diffraction, evidence of B-site ordering was observed. The BS-PMN-PT proved to be a model system with high temperature relaxor properties of Tmax ˜ 250°C to 300°C and εmax ˜ 14,000 to 17,000 at 1 kHz. The deviation temperature, TD, or temperature of the onset of local spontaneous polarization, was determined by thermal strain measurement and high temperature dielectric measurement to be approximately 600°C; up to 250°C higher than any reported value for relaxor ferroelectrics. The frequency dependence of the temperature of the permittivity maximum was found to follow the Vogel-Fulcher relationship, with an activation energy (EA) of ˜0.1 eV, and a freezing

  11. Relationship between ferroelectric properties and local structure of Pb1-xBaxZr0.40Ti0.60O3 ceramic materials studied by X-ray absorption and Raman spectroscopies

    NASA Astrophysics Data System (ADS)

    Mesquita, Alexandre; Michalowicz, Alain; Moscovici, Jacques; Pizani, Paulo Sergio; Mastelaro, Valmor Roberto

    2016-08-01

    This paper reports on the structural characterization of Pb1-xBaxZr0.40Ti0.60O3 (PBZT) ferroelectric ceramic compositions prepared by the conventional solid state reaction method. X-ray absorption spectroscopy (XAS) and Raman spectroscopy were used in the probing of the local structure of PBZT samples that exhibit a normal or relaxor ferroelectric behavior. They showed a considerable local disorder around Zr and Pb atoms in the samples of tetragonal or cubic long-range order symmetry. The intensity of the E(TO3) mode in the Raman spectra of PBZT relaxor samples remains constant at temperatures lower than Tm, which has proven the stabilization of the correlation process between nanodomains.

  12. Anisotropic behavior of water in ferroelectric liquid crystals.

    PubMed

    Singh, G; Choudhary, A; Prakash, G Vijaya; Biradar, A M

    2010-05-01

    The outcome of water addition in ferroelectric liquid crystal (FLC) has been investigated in uniform and defect-free homogeneous and homeotropically aligned monodomain sample cells from electro-optical and dielectric spectroscopic measurements. The lagging in optical response between nonconducting (spatially variable switching) and conducting (conventional switching) portions of water added FLC sample cell has been observed by frequency-dependent electro-optical studies. The bias-dependent water related new relaxation peak near the conventional Goldstone mode relaxation process has been observed only in the homogeneous alignment and not in the homeotropic one. Further, the significant increment in dielectric anisotropy as well as faster diffusion of water along long molecular axis than short molecular axis has also been monitored. These studies strongly suggest that the distribution of water is anisotropic in FLC medium and could be the reason for new relaxation peak in the water added FLC sample. PMID:20866247

  13. Temperature-dependent Raman scattering and multiple phase coexistence in relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Zhu, J. J.; Jiang, K.; Xu, G. S.; Hu, Z. G.; Li, Y. W.; Zhu, Z. Q.; Chu, J. H.

    2013-10-01

    We report direct observation for the structural transformations of relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals with the aid of temperature-dependent polarized Raman scattering and X-ray diffraction. The cubic to tetragonal phase transition is observed at 460 K and tetragonal to rhombohedral structural transformation takes place at 390 K, which are consistent with the results determined by dielectric spectroscopy. In addition to two well-known phase transitions above room temperature, anomalous structure deformations involving octahedral rotations and tilting angle of polarization can be found around 200 K. A comparison of experimental results with the Devonshire expansion of the free energy by Vanderbilt et al. [Phys. Rev. B 63, 094108 (2001)] allows us to elucidate the peculiar characteristic as the variation of volume fractions among coexistence of three phases, including a first-order phase transition between the orthorhombic and rhombohedral phases and a second-order phase transition between the monoclinic and orthorhombic ones at low temperature.

  14. Magnetoelectric relaxor and reentrant behaviours in multiferroic Pb(Fe2/3W1/3)O3 crystal

    NASA Astrophysics Data System (ADS)

    Chen, Ling; Bokov, Alexei A.; Zhu, Weimin; Wu, Hua; Zhuang, Jian; Zhang, Nan; Tailor, Hamel N.; Ren, Wei; Ye, Zuo-Guang

    2016-03-01

    Significant quenched disorder in crystal structure can break ferroic (magnetic or electric) long-range order, resulting in the development of ferroic glassy states at low temperatures such as magnetic spin glasses, electric dipolar glasses, relaxor ferroelectrics, etc. These states have been widely studied due to novel physical phenomena they reveal. Much less known are the effects of quenched disorder in multiferroics, i.e. the materials where magnetic and electric correlations coexist. Here we report an unusual behaviour in complex perovskite Pb(Fe2/3W1/3)O3 (PFW) crystals: the coexistence of electric relaxor, magnetic relaxor and antiferromagnetic (AFM) states. The most striking finding is the transformation of the AFM phase into a new reentrant-type magnetic glassy phase below Tg ≅ 10 K. We show that the behaviour at this transformation contrasts the typical behaviour of canonical spin glasses and is similar to the behaviour of relaxor ferroelectrics. Magnetoelectric effect is also observed in the AFM phase in the temperature range of the transition into electric relaxor phase at Tf ≅ 200. The mechanism of magnetic relaxor behaviour is supposed to arise from the frustrated interactions among the spins located at the AFM domain walls. Our results should inspire further studies of multirelaxor behaviour in other multiferroic systems.

  15. Magnetoelectric relaxor and reentrant behaviours in multiferroic Pb(Fe2/3W1/3)O3 crystal

    PubMed Central

    Chen, Ling; Bokov, Alexei A.; Zhu, Weimin; Wu, Hua; Zhuang, Jian; Zhang, Nan; Tailor, Hamel N.; Ren, Wei; Ye, Zuo-Guang

    2016-01-01

    Significant quenched disorder in crystal structure can break ferroic (magnetic or electric) long-range order, resulting in the development of ferroic glassy states at low temperatures such as magnetic spin glasses, electric dipolar glasses, relaxor ferroelectrics, etc. These states have been widely studied due to novel physical phenomena they reveal. Much less known are the effects of quenched disorder in multiferroics, i.e. the materials where magnetic and electric correlations coexist. Here we report an unusual behaviour in complex perovskite Pb(Fe2/3W1/3)O3 (PFW) crystals: the coexistence of electric relaxor, magnetic relaxor and antiferromagnetic (AFM) states. The most striking finding is the transformation of the AFM phase into a new reentrant-type magnetic glassy phase below Tg ≅ 10 K. We show that the behaviour at this transformation contrasts the typical behaviour of canonical spin glasses and is similar to the behaviour of relaxor ferroelectrics. Magnetoelectric effect is also observed in the AFM phase in the temperature range of the transition into electric relaxor phase at Tf ≅ 200. The mechanism of magnetic relaxor behaviour is supposed to arise from the frustrated interactions among the spins located at the AFM domain walls. Our results should inspire further studies of multirelaxor behaviour in other multiferroic systems. PMID:26936414

  16. Role of point defects in bipolar fatigue behavior of Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3} modified (Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} relaxor ceramics

    SciTech Connect

    Kumar, Nitish Ansell, Troy Y.; Cann, David P.

    2014-04-21

    Lead-free Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3}-(Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} (BMT-BKT-BNT) ceramics have been shown to exhibit large electromechanical strains under high electric fields along with negligible fatigue under strong electric fields. To investigate the role of point defects on the fatigue characteristics, the composition 5BMT-40BKT-55BNT was doped to incorporate acceptor and donor defects on the A and B sites by adjusting the Bi/Na and Ti/Mg stoichiometries. All samples had pseudo-cubic symmetries based on x-ray diffraction, typical of relaxors. Dielectric measurements showed that the high and low temperature phase transitions were largely unaffected by doping. Acceptor doping resulted in the observation of a typical ferroelectric-like polarization with a remnant polarization and strain hysteresis loops with significant negative strain. Donor-doped compositions exhibited characteristics that were indicative of an ergodic relaxor phase. Fatigue measurements were carried out on all of the compositions. While the A-site acceptor-doped composition showed a small degradation in maximum strain after 10{sup 6} cycles, the other compositions were essentially fatigue free. Impedance measurements were used to identify the important conduction mechanisms in these compositions. As expected, the presence of defects did not strongly influence the fatigue behavior in donor-doped compositions owing to the nature of their reversible field-induced phase transformation. Even for the acceptor-doped compositions, which had stable domains in the absence of an electric field at room temperature, there was negligible degradation in the maximum strain due to fatigue. This suggests that either the defects introduced through stoichiometric variations do not play a prominent role in fatigue in these systems or it is compensated by factors like decrease in coercive field, an increase in ergodicity, symmetry change, or other factors.

  17. The pyroelectric behavior of lead free ferroelectric ceramics in thermally stimulated depolarization current measurements

    NASA Astrophysics Data System (ADS)

    González-Abreu, Y.; Peláiz-Barranco, A.; Garcia-Wong, A. C.; Guerra, J. D. S.

    2012-06-01

    The present paper shows a detailed analysis on the thermally stimulated processes in barium modified SrBi2Nb2O9 ferroelectric bi-layered perovskite, which is one of the most promising candidates for non-volatile random access memory applications because of its excellent fatigue-resistant properties. A numerical method is used to separate the real pyroelectric current from the other thermally stimulated processes. A discharge due to the space-charge injected during the poling process, the pyroelectric response, and a conductive process are discussed in a wide temperature range from ferroelectric to paraelectric phase. The pyroelectric response is separated from the other components to evaluate the polarization behavior and some pyroelectric parameters. The remanent polarization, the pyroelectric coefficient, and the merit figure are evaluated, which show good results.

  18. Memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} ferroelectric tunnel junctions

    SciTech Connect

    Wen, Zheng; Wu, Di Li, Aidong

    2014-08-04

    We demonstrate memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} metal/ferroelectric/semiconductor ferroelectric tunnel junctions, in which the semiconductor electrode can be switched between the accumulated and the depleted states by polarization reversal in the BaTiO{sub 3} barrier via the ferroelectric field effect. An extra barrier, against electron tunneling, forms in the depleted region of the Nb:SrTiO{sub 3} electrode surface, which together with the ferroelectric barrier itself modulate the tunneling resistance with the change of effective polarization. Continuous resistance modulation over four orders of magnitude is hence achieved by application of programmed voltage pulses with different polarity, amplitude, and repetition numbers, as a result of the development of the extra barrier.

  19. Structure and Relaxor Behaviour of Ba2+ Substituted NBT Ceramics

    NASA Astrophysics Data System (ADS)

    Rao, K. Sambasiva; Tilak, B.; Rajulu, K. Ch. Varada; Swathi, A.; Workineh, Haileeyesus; Ganagadharudu, D.

    2011-11-01

    In the course of search for environmental-friendly lead-free relaxor ferroelectrics, (Bi,Na)TiO3-(NBT) based ceramics show very good physical properties among several lead-free compositions. The NBT composition exhibits a strong ferroelectricity and high Curie temperature, and considered to be a good candidate for lead-free ceramics as a substitute for lead-based materials (e.g., PZT). In the present communication barium substituted NBT, (Na0.5Bi0.5)0.912Ba0.088TiO3-0.088BNBT composition has been prepared by conventional solid-state reaction process. The tolerance factor has been estimated and found to be 0.819, indicating the stability of the perovskite structure. The XRD analysis of the material revealed a pure perovskite with tetragonal structure. The average grain size as observed from SEM, was found to be 1.04μm. Detailed studies exhibit a relaxor behaviour with diffuse phase transition. The diffuseness parameter has been established to be 1.97. The dielectric relaxation obeyed the Vogel-Fulcher (V-F) relation. From the V-F plot, the obtained values are Tf = 305°C, Ea = 0.0131eV and νo = 2.95×105Hz, which provide the evidence of relaxor behaviour. The electrical behaviour has been probed through complex impedance spectroscopy. The frequency-dependent conductivity spectra obey the power law in the frequency range of 45Hz-5MHz and temperature range of 35 °C-60 °C.

  20. Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, Ming; Zhu, Qiu-Xiang; Li, Xue-Yan; Yang, Ming-Min; Wang, Yu; Li, Xiao-Min; Shi, Xun; Luo, Hao-Su; Zheng, Ren-Kui

    2014-09-01

    We have fabricated magnetoelectric heterostructures by growing ferromagnetic La1-xBaxMnO3 (x = 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb1/2)O3-0.34PbTiO3 (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature TC of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and TC are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R)strain] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La0.8Ba0.2MnO3 film and 150 K for the La0.6Ba0.4MnO3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.

  1. Electric-field-controlled interface strain coupling and non-volatile resistance switching of La{sub 1-x}Ba{sub x}MnO₃ thin films epitaxially grown on relaxor-based ferroelectric single crystals

    SciTech Connect

    Zheng, Ming; Zhu, Qiu-Xiang; Li, Xue-Yan; Yang, Ming-Min; Li, Xiao-Min; Shi, Xun; Luo, Hao-Su; Zheng, Ren-Kui; Wang, Yu

    2014-09-21

    We have fabricated magnetoelectric heterostructures by growing ferromagnetic La{sub 1-x}Ba{sub x}MnO₃ (x=0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In{sub 1/2}Nb{sub 1/2})O₃-0.35Pb(Mg{sub 1/3}Nb{sub 1/2})O₃-0.34PbTiO₃ (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature TC of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and TC are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R){sub strain}] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La₀.₈Ba₀.₂MnO₃ film and 150 K for the La₀.₆Ba₀.₄MnO₃ film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.

  2. Relaxor Behavior and Dielectric Relaxation in Lead-Free Solid Solutions of (1 - x)(Bi0.5Na0.5TiO3)- x(SrNb2O6)

    NASA Astrophysics Data System (ADS)

    Bajpai, P. K.; Singh, K. N.; Tamrakar, Preeti

    2016-02-01

    Lead-free compositions (1 - x) (Bi0.5Na0.5TiO3)- x(SrNb2O6) (BNT-SN) are synthesized by a simple solid state reaction route. SN diffuse in distorted perovskite BNT for low concentrations of SN ( x ≤ 0.03) and are stabilized in rhombohedral perovskite phase with experimentally observed relative density of the ceramics >92%. A temperature-dependent dielectric response exhibits a broad dielectric peak that shows frequency-dependent shifts towards higher temperatures reflecting typical relaxor behavior. Modified Curie-Weiss law and Lorentz-type empirical relationships are used to fit the dielectric data that exhibit almost complete diffuse phase transition characteristics. In addition, significant dielectric dispersion is observed in a low-frequency regime in both components of the dielectric response and a small dielectric relaxation peak is observed. Cole-Cole plots indicate the poly-dispersive nature of the dielectric relaxation.

  3. Structural, optical and ferroelectric behavior of hydrothermally grown ZnO nanostructures

    NASA Astrophysics Data System (ADS)

    Chand, Prakash; Gaur, Anurag; Kumar, Ashavani

    2013-12-01

    In the present study, zinc oxide (ZnO) nanostructures have been synthesized at 100 °C for different aging periods, 1, 24, 48 and 96 h by hydrothermal method. Structural, optical and ferroelectric properties were investigated using X-ray diffractometer, field emission scanning electron microscope, Transmission electron microscope, photoluminescence, UV-visible, Raman spectroscopy and P-E loop tracer. The X-ray diffractometer pattern indicates the pure phase formation of ZnO without any impurity for the samples synthesized from 1 to 96 h aging periods, respectively. Field emission scanning electron microscope and transmission electron microscope analysis also shows that the average diameter and length of these nanorods increases with increasing the aging periods. Moreover Raman and Photoluminescence spectrum also confirm the wurtzite phase formation of ZnO. The optical band gaps calculated through UV-visible spectroscopy are found to decrease from 3.81 to 3.45 eV with increase in aging periods, 1-96 h, respectively. Further, improved ferroelectric behavior has been observed for 48 and 96 h aged samples.

  4. Observation of adsorption behavior of biomolecules on ferroelectric crystal surfaces with polarization domain patterns

    NASA Astrophysics Data System (ADS)

    Nakayama, Tomoaki; Isobe, Akiko; Ogino, Toshio

    2016-08-01

    Lithium tantalate (LiTaO3) is one of the ferroelectric crystals that exhibit spontaneous polarization domain patterns on its surface. We observed the polarization-dependent adsorption of avidin molecules, which are positively charged in a buffer solution at pH 7.0, on LiTaO3 surfaces caused by electrostatic interaction at an electrostatic double layer using atomic force microscopy (AFM). Avidin adsorption in the buffer solution was confirmed by scratching the substrate surfaces using the AFM cantilever, and the adsorption patterns were found to depend on the avidin concentration. When KCl was added to the buffer solution to weaken the electrostatic double layer interaction between avidin molecules and LiTaO3 surfaces, adsorption domain patterns disappeared. From the comparison between the adsorption and chemically etched domain patterns, it was found that avidin molecule adsorption is enhanced on negatively polarized domains, indicating that surface polarization should be taken into account in observing biomolecule behaviors on ferroelectric crystals.

  5. Pressure as a probe of the glassy state of ferroelectrics with random site disorder

    SciTech Connect

    Samara, G.A.; Hansen, L.V.

    1998-03-10

    Results on lanthanum-modified lead zirconate-titanates (PLZTs) have revealed a pressure-induced crossover from a normal ferroelectric to a relaxor state and the continuous evolution of the dynamics and energetics of the relaxation process. This crossover appears to be a general feature of soft mode ferroelectrics with random site dipolar impurities or polar nanodomains and results from a large decrease in the correlation radius among polar nanodomains -- a unique property of soft mode ferroelectrics.

  6. High spatial and temporal resolution studies of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Hubert, Charles Rankin, Jr.

    -resolution ANSOM images show the existence of polar nanodomains in BaxSr1-x TiO3 films, providing strong direct evidence of its relaxor character. To study the temporal behavior of these thin-films, the microwave dielectric response of a ferroelectric thin film is measured locally using time-resolved confocal scanning optical microscopy (TRCSOM). Measurements performed on an ensemble of nanometer-scale regions show a well-defined phase shift between the paraelectric and ferroelectric response at 2-4 GHz. Application of a static electric field produces large local variations in the phase of the ferroelectric response. These variations are attributed to the growth of in-plane ferroelectric nanodomains whose size-dependent relaxation frequencies lead to strong dielectric dispersion at mesoscopic scales.

  7. Relaxor-PT Single crystals: Observations and Developments

    PubMed Central

    Zhang, Shujun; Shrout, Thomas R.

    2011-01-01

    Relaxor-PT based ferroelectric single crystals Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZNT) and Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMNT) attracted lot of attentions in last decade due to their ultra high electromechanical coupling factors and piezoelectric coefficients. However, owing to a strongly curved morphotropic phase boundary (MPB), the usage temperature of these perovskite single crystals is limited by TRT - the rhombohedral to tetragonal phase transition temperature, which occurs at significantly lower temperatures than the Curie temperature TC. Furthermore, the low mechanical quality factors and coercive fields of these crystals, usually being on the order of ~70 and 2–3kV/cm, respectively, restrict their usage in high power applications. Thus, it is desirable to have high performance crystals with high temperature usage range and high power characteristics. In this survey, different binary and ternary crystal systems were explored, with respect to their temperature usage range, general trends of dielectric and piezoelectric properties of relaxor-PT crystal systems were discussed related to their TC/TRT. In addition, two approaches were proposed to improve mechanical Q values, including acceptor dopant strategy, analogous to “hard” polycrystalline ceramics, and anisotropic domain engineering configurations. PMID:20889397

  8. Lattice dynamics and dielectric spectroscopy of BZT and NBT lead-free perovskite relaxors - comparison with lead-based relaxors

    NASA Astrophysics Data System (ADS)

    Petzelt, Jan; Nuzhnyy, Dmitry; Bovtun, Viktor; Kempa, Martin; Savinov, Maxim; Kamba, Stanislav; Hlinka, Jiri

    2015-03-01

    Appearance of the polar nanoregions (PNR) and their manifestation in the dielectric spectra is discussed for lead-free Ba(ZrxTi1-x)O3 (BZT-x) and (Na1/2Bi1/2)TiO3 (NBT) ceramics. Phonon softening is not as pronounced as in the lead-based relaxors, but the relaxation contribution is dominating in all cases, caused by the dynamics of the off-centred ions (Ti4+, Bi3+, Pb2+). In the lead-based relaxors, where there is no relation between the quenched chemical clusters at the B-sites and PNR, which concern the A-site Pb-ion correlations, the relaxation dynamics follows the Vogel-Fulcher behaviour with a clear freezing. However, in BZT and NBT, the PNR are smaller, since they are localised within the small quenched chemical clusters of BaTiO3 and BiTiO3, respectively. Their dynamics is Arrhenius-like, which indicates hopping of the off-centred Ti4+ and Bi3+ ions, respectively, without their complete freezing. BZT can be classified as a dipolar glass and NBT as a nanoscopic ferroelectric with peculiar Bi-ion dynamics.

  9. Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3

    PubMed Central

    Groszewicz, Pedro B.; Gröting, Melanie; Breitzke, Hergen; Jo, Wook; Albe, Karsten; Buntkowsky, Gerd; Rödel, Jürgen

    2016-01-01

    Lead-based relaxor ferroelectrics are key functional materials indispensable for the production of multilayer ceramic capacitors and piezoelectric transducers. Currently there are strong efforts to develop novel environmentally benign lead-free relaxor materials. The structural origins of the relaxor state and the role of composition modifications in these lead-free materials are still not well understood. In the present contribution, the solid-solution (100-x)(Bi1/2Na1/2)TiO3-xBaTiO3 (BNT-xBT), a prototypic lead-free relaxor is studied by the combination of solid-state nuclear magnetic resonance (NMR) spectroscopy, dielectric measurements and ab-initio density functional theory (DFT). For the first time it is shown that the peculiar composition dependence of the EFG distribution width (ΔQISwidth) correlates strongly to the dispersion in dielectric permittivity, a fingerprint of the relaxor state. Significant disorder is found in the local structure of BNT-xBT, as indicated by the analysis of the electric field gradient (EFG) in 23Na 3QMAS NMR spectra. Aided by DFT calculations, this disorder is attributed to a continuous unimodal distribution of octahedral tilting. These results contrast strongly to the previously proposed coexistence of two octahedral tilt systems in BNT-xBT. Based on these results, we propose that considerable octahedral tilt disorder may be a general feature of these oxides and essential for their relaxor properties. PMID:27545094

  10. Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3.

    PubMed

    Groszewicz, Pedro B; Gröting, Melanie; Breitzke, Hergen; Jo, Wook; Albe, Karsten; Buntkowsky, Gerd; Rödel, Jürgen

    2016-01-01

    Lead-based relaxor ferroelectrics are key functional materials indispensable for the production of multilayer ceramic capacitors and piezoelectric transducers. Currently there are strong efforts to develop novel environmentally benign lead-free relaxor materials. The structural origins of the relaxor state and the role of composition modifications in these lead-free materials are still not well understood. In the present contribution, the solid-solution (100-x)(Bi1/2Na1/2)TiO3-xBaTiO3 (BNT-xBT), a prototypic lead-free relaxor is studied by the combination of solid-state nuclear magnetic resonance (NMR) spectroscopy, dielectric measurements and ab-initio density functional theory (DFT). For the first time it is shown that the peculiar composition dependence of the EFG distribution width (ΔQISwidth) correlates strongly to the dispersion in dielectric permittivity, a fingerprint of the relaxor state. Significant disorder is found in the local structure of BNT-xBT, as indicated by the analysis of the electric field gradient (EFG) in (23)Na 3QMAS NMR spectra. Aided by DFT calculations, this disorder is attributed to a continuous unimodal distribution of octahedral tilting. These results contrast strongly to the previously proposed coexistence of two octahedral tilt systems in BNT-xBT. Based on these results, we propose that considerable octahedral tilt disorder may be a general feature of these oxides and essential for their relaxor properties. PMID:27545094

  11. Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3

    NASA Astrophysics Data System (ADS)

    Groszewicz, Pedro B.; Gröting, Melanie; Breitzke, Hergen; Jo, Wook; Albe, Karsten; Buntkowsky, Gerd; Rödel, Jürgen

    2016-08-01

    Lead-based relaxor ferroelectrics are key functional materials indispensable for the production of multilayer ceramic capacitors and piezoelectric transducers. Currently there are strong efforts to develop novel environmentally benign lead-free relaxor materials. The structural origins of the relaxor state and the role of composition modifications in these lead-free materials are still not well understood. In the present contribution, the solid-solution (100-x)(Bi1/2Na1/2)TiO3-xBaTiO3 (BNT-xBT), a prototypic lead-free relaxor is studied by the combination of solid-state nuclear magnetic resonance (NMR) spectroscopy, dielectric measurements and ab-initio density functional theory (DFT). For the first time it is shown that the peculiar composition dependence of the EFG distribution width (ΔQISwidth) correlates strongly to the dispersion in dielectric permittivity, a fingerprint of the relaxor state. Significant disorder is found in the local structure of BNT-xBT, as indicated by the analysis of the electric field gradient (EFG) in 23Na 3QMAS NMR spectra. Aided by DFT calculations, this disorder is attributed to a continuous unimodal distribution of octahedral tilting. These results contrast strongly to the previously proposed coexistence of two octahedral tilt systems in BNT-xBT. Based on these results, we propose that considerable octahedral tilt disorder may be a general feature of these oxides and essential for their relaxor properties.

  12. Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3.

    PubMed

    Groszewicz, Pedro B; Gröting, Melanie; Breitzke, Hergen; Jo, Wook; Albe, Karsten; Buntkowsky, Gerd; Rödel, Jürgen

    2016-08-22

    Lead-based relaxor ferroelectrics are key functional materials indispensable for the production of multilayer ceramic capacitors and piezoelectric transducers. Currently there are strong efforts to develop novel environmentally benign lead-free relaxor materials. The structural origins of the relaxor state and the role of composition modifications in these lead-free materials are still not well understood. In the present contribution, the solid-solution (100-x)(Bi1/2Na1/2)TiO3-xBaTiO3 (BNT-xBT), a prototypic lead-free relaxor is studied by the combination of solid-state nuclear magnetic resonance (NMR) spectroscopy, dielectric measurements and ab-initio density functional theory (DFT). For the first time it is shown that the peculiar composition dependence of the EFG distribution width (ΔQISwidth) correlates strongly to the dispersion in dielectric permittivity, a fingerprint of the relaxor state. Significant disorder is found in the local structure of BNT-xBT, as indicated by the analysis of the electric field gradient (EFG) in (23)Na 3QMAS NMR spectra. Aided by DFT calculations, this disorder is attributed to a continuous unimodal distribution of octahedral tilting. These results contrast strongly to the previously proposed coexistence of two octahedral tilt systems in BNT-xBT. Based on these results, we propose that considerable octahedral tilt disorder may be a general feature of these oxides and essential for their relaxor properties.

  13. Dielectric, piezoelectric, and ferroelectric properties of grain-orientated Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} ceramics

    SciTech Connect

    Liu Jing; Shen Zhijian; Yan Haixue; Reece, Michael J.; Kan Yanmei; Wang Peiling

    2007-11-15

    By dynamic forging during Spark Plasma Sintering (SPS), grain-orientated ferroelectric Bi{sub 3.25}La{sub 0.75}Ti{sub 3}O{sub 12} (BLT) ceramics were prepared. Their ferroelectric, piezoelectric, and dielectric properties are anisotropic. The textured ceramics parallel and perpendicular to the shear flow directions have similar thermal depoling behaviors. The d{sub 33} piezoelectric coefficient of BLT ceramics gradually reduces up to 350 deg. C; it then drops rapidly. The broadness of the dielectric constant and loss peaks and the existence of d{sub 33} above the permittivity peak, T{sub m}, show that the BLT ceramic has relaxor-like behavior.

  14. Broadband inelastic light scattering study on relaxor ferroelectric Pb(In1/2Nb1/2)-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Hyun Kim, Tae; Kojima, Seiji; Ko, Jae-Hyeon

    2014-06-01

    The broadband inelastic light scattering spectra of ternary Pb(In1/2Nb1/2)-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals were investigated as a function of temperature and crystal orientation by combining Raman and Brillouin spectroscopies. The angular dependence of the strong Raman peak located at ˜50 cm-1 was investigated at 300 °C. The intensity variation of this mode with rotation angle was compatible with the F2g mode of Fm3¯m symmetry, suggesting that this mode arises from the 1:1 chemical order at the B-site in this perovskite structure. The temperature evolution of the polar nanoregions was associated with the growth of two central peaks and the change in the intensity of some Raman peaks, which were known to be sensitive to the rhombohedral symmetry. Both relaxation processes exhibited partial slowing-down behaviors with a common critical temperature of ˜160 °C. Poling the crystal along the [001] direction induced abrupt changes in some of the Raman bands at the rhombohedral-tetragonal phase transition. On the other hand, the diffuse tetragonal-cubic phase transition was not affected by the poling process. This high-temperature phase transformation seems to be smeared out by the inherent disorder and strong random fields enhanced by the addition of Pb(In1/2Nb1/2) into Pb(Mg1/3Nb2/3)O3-PbTiO3.

  15. Chemistry of ferroelectric surfaces.

    PubMed

    Garrity, K; Kolpak, A M; Ismail-Beigi, S; Altman, E I

    2010-07-20

    It has been recognized since the 1950s that the polar and switchable nature of ferroelectric surfaces can potentially lead to polarization direction-dependent surface chemistry. Recent theoretical studies and advances in growing high quality epitaxial ferroelectric thin films have motivated a flurry of experimental studies aimed at creating surfaces with switchable adsorption and catalytic properties, as well as films whose polarization direction switches depending on the gas phase environment. This research news article briefly reviews the key findings of these studies. These include observations that the adsorption strengths, and in certain cases the activation energies for reactions, of polar molecules on the surfaces of ferroelectric materials are sensitive to the polarization direction. For bare ferroelectric surfaces, the magnitudes of these differences are not large, but are still comparable to the energy barrier required to switch the polarization of approximately 10 nm thick films. Highlights of a recent study where chemical switching of a thin film ferroelectric was demonstrated are presented. Attempts to use the ferroelectric polarization to influence the behavior of supported catalytic metals will also be described. It will be shown that the tendency of the metals to cluster into particles makes it difficult to alter the chemical properties of the metal surface, since it is separated from the ferroelectric by several layers of metal atoms. An alternate approach to increasing the reactivity of ferroelectric surfaces is suggested that involves modifying the surface with atoms that bind strongly to the surface and thus remain atomically dispersed.

  16. Polar octahedral rotations, cation displacement and ferroelectricity in multiferroic SmCrO3

    NASA Astrophysics Data System (ADS)

    Ghosh, A.; Dey, K.; Chakraborty, M.; Majumdar, S.; Giri, S.

    2014-08-01

    Our thorough synchrotron diffraction studies provide a clue on the origin of ferroelectricity in SmCrO3. Careful observation demonstrates that polar order develops in the paramagnetic state. Rietveld refinement of the diffraction data confirms that emergence of polar order is correlated with the structural transformation from centrosymmetric Pbnm to non-centrosymmetric Pna21 space group of the distorted orthorhombic structure. Rotations of polar CrO6 octahedra and Sm displacement are proposed to be correlated with the emergence of polar order, which is extended over a wide temperature range and increases gradually with decreasing temperature. This is consistent with the relaxor behavior as evident from the frequency-dependent dielectric response satisfying the Vogel-Fulcher law. A non-collinear to collinear spin transformation is suggested well below the spin reorientation transition. Appearance of ferroelectricity without any correlation to the antiferromagnetic order in SmCrO3 suggests a new class of ferroelectricity. All-electron full-potential first-principles calculation demonstrates significant Sm-Cr hybridization near the Fermi level, which substantiates the experimental findings.

  17. Ferroelectric fluoro-terpolymers with high dielectric constant and large electromechanical response at ambient temperature

    NASA Astrophysics Data System (ADS)

    Chung, T. C.; Petchsuk, Atitsa

    2003-08-01

    This paper discusses a new family of ferroelectric polymorphs fluoro-terpolymers comprising vinylidene difluoride (VDF), trifluoroethylene (TrFE), and a chloro-containing third monomer, including vinyl chloride (VC), 1,1-chlorofluoroethylene (CFE), chlorodifluoroethylene (CDFE), chlorotrifluoroethylene (CTFE), with narrow molecular weight and composition distributions. The slightly bulky chlorine atom serves as a kink in the polymer chain, which spontaneously alters the chain conformation and crystalline structure. Comparing with the corresponding VDF/TrFE copolymer, the slowly increasing chlorine content (< 8 mol% of ter-monomer) gradually changes the all-trans chain conformation to tttg+tttg- conformation, without significant reduction of overall crystallinity. Curie (F-P) phase transition temperature between the mixed ferroelectric phases and paraelectric phase (tg+tg- conformation) also gradually reduced to near ambient temperature, with very small activation energy. Consequently, the terpolymers show high dielectric constant (>80) and large electrostrictive response (>5%) at ambient temperature, and exhibiting common ferroelectric relaxor behaviors with a broad dielectric peak that shifted toward higher temperatures as the frequency increased, and a slim polarization hysteresis loop at ambient temperature.

  18. Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

    NASA Astrophysics Data System (ADS)

    An, Namhyun; Lee, Hwauk; Sharma, Sanjeev K.; Lee, Youngmin; Kim, Deuk Young; Lee, Sejoon

    2016-04-01

    ZnTiMnO layers grown on Pt (111)/Al2O3 (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO's host lattices. After annealing at 900°C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis ( i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.

  19. From spin induced ferroelectricity to spin and dipolar glass in a triangular lattice: The CuCr{sub 1−x}V{sub x}O{sub 2} (0≤x≤0.5) delafossite

    SciTech Connect

    Kumar, S.; Singh, K.; Miclau, M.; Simon, Ch.; Martin, C.; Maignan, A.

    2013-07-15

    The change from antiferromagnetism induced ferroelectricity to spin glass ferroelectric relaxor has been studied along the CuCr{sub 1−x}V{sub x}O{sub 2} (0≤x≤0.5) solid solution of polycrystalline samples. As x increases from CuCrO{sub 2} (x=0) to CuCr{sub 0.82}V{sub 0.18}O{sub 2}, it is found that the Néel temperature decreases from ∼24 K down to ∼13 K. This progressive weakening of the antiferromagnetism of CuCrO{sub 2} induces a rapid decrease of the spin induced ferroelectricity with polarization values going from ∼44 μC/m{sup 2} down to ∼1.5 μC/m{sup 2} for x=0.04 and x=0.08, respectively. Beyond x=0.18 (0.20≤x≤0.50), ac-magnetic susceptibility and magnetization measurements evidence a spin glass state while dielectric permittivity and polarization measurements point towards a relaxor behaviour. This shows that competing magnetic interactions in delafossites are an efficient way to transform a spin induced magnetoelectric into a multiglass (spin and dipolar) state. - Graphical abstract: The P(T) curves evidencing the aging effect on polarization in CuCr{sub 0.5}V{sub 0.5}O{sub 2}: E=135 kV/m is applied during cooling at different temperatures. The P values and the inflection point of the transition depend on the poling temperature suggesting a relaxor behaviour. This effect related to the spin glass state is not observed for the lowest vanadium content. - Highlights: • Samples of the CuCr{sub 1−x}V{sub x}O{sub 2} series have been studied. • The V content increase induces a change from antiferromagnetism to spin glass. • A behavior characterisitic of a spin and dipole glass is demonstrated. • The ferroelectricity is shown to go from spin induced to relaxor. • Competing magnetic interactions are efficient way to generate multiglass state.

  20. Ferroelectric Pump

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    2000-01-01

    A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

  1. Synthetic strategy of porous ZnO and CdS nanostructures doped ferroelectric liquid crystal and its optical behavior

    NASA Astrophysics Data System (ADS)

    Pal, Kaushik; Maiti, Uday Narayan; Majumder, Tapas Pal; Debnath, Subhas Chandra; Bennis, Noureddine; Otón, Jose Manuel

    2013-03-01

    A simple and scalable chemical approach has been proposed for the generation of 1-dimensional nanostructures of two most important inorganic materials such as zinc oxide and cadmium sulfide. By controlling the growth habit of the nanostructures with manipulated reaction conditions, the diameter and uniformity of the nanowires/nanorods were tailored. We studied extensively optical behavior and structural growth of CdS NWs and ZnO NRs doped ferroelectric liquid crystal Felix-017/100. Due to doping band gap has been changed and several blue shifts occurred in photoluminescence spectra because of nanoconfinement effect and mobility of charges.

  2. Investigaction of Switching Behavior in a Ferroelectric Liquid Crystal Aligned on Obliquely Deposited SiO Films

    NASA Astrophysics Data System (ADS)

    Yamada, Yuichiro; Yamamoto, Norio; Inoue, Tetsuya; Orihara, Hiroshi; Ishibashi, Yoshihiro

    1989-01-01

    The effect of oblique evaporation of SiO on the chevron structure and the switching behavior in a ferroelectric liquid crystal have been investigated by means of the X-ray diffraction and the stroboscopic micrographs. It is found experimentally that the chevron direction and the domain structure appearing during the switching are determined by the direction of incidence of evaporated SiO. On the basis of the experimental results, it is clarified that the bow and the stern of the boat-shaped domain correspond to {+}2π and {-}2π internal disclinations, respectively. The structure of the zig-zag defect is determined.

  3. Ferroelectricity in spiral magnets.

    PubMed

    Mostovoy, Maxim

    2006-02-17

    It was recently observed that the ferroelectrics showing the strongest sensitivity to an applied magnetic field are spiral magnets. We present a phenomenological theory of inhomogeneous ferroelectric magnets, which describes their thermodynamics and magnetic field behavior, e.g., dielectric susceptibility anomalies at magnetic transitions and sudden flops of electric polarization in an applied magnetic field. We show that electric polarization can also be induced at domain walls and that magnetic vortices carry electric charge. PMID:16606047

  4. Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

    NASA Astrophysics Data System (ADS)

    M. Bedoya-Hincapié, C.; H. Ortiz-Álvarez, H.; Restrepo-Parra, E.; J. Olaya-Flórez, J.; E. Alfonso, J.

    2015-11-01

    The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response. Project sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-“Crecimiento y caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering” and Project 12920-“Desarrollo teóricoexperimental de nanoestructuras basadas en Bismuto y materiales similares” and “Bisnano Project.”

  5. Piezoelectric activity in Perovskite ferroelectric crystals.

    PubMed

    Li, Fei; Wang, Linghang; Jin, Li; Lin, Dabin; Li, Jinglei; Li, Zhenrong; Xu, Zhuo; Zhang, Shujun

    2015-01-01

    Perovskite ferroelectrics (PFs) have been the dominant piezoelectric materials for various electromechanical applications, such as ultrasonic transducers, sensors, and actuators, to name a few. In this review article, the development of PF crystals is introduced, focusing on the crystal growth and piezoelectric activity. The critical factors responsible for the high piezoelectric activity of PFs (i.e., phase transition, monoclinic phase, domain size, relaxor component, dopants, and piezoelectric anisotropy) are surveyed and discussed. A general picture of the present understanding on the high piezoelectricity of PFs is described. At the end of this review, potential approaches to further improve the piezoelectricity of PFs are proposed.

  6. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    SciTech Connect

    Zhao, X. L.; Wang, J. L. E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T. E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H.

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  7. Growth and characterization of piezo-/ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3-Bi(Zn1/2Ti1/2)O3 ternary single crystals

    NASA Astrophysics Data System (ADS)

    Belan, Reagan A.; Tailor, Hamel N.; Long, Xifa; Bokov, Alexei A.; Ye, Zuo-Guang

    2011-03-01

    In order to develop new piezo-/ferroelectric materials, single crystals of the Pb(Mg1/3Nb2/3)O3-PbTiO3-Bi(Zn1/2Ti1/2)O3 [PMN-PT-BZT] ternary complex perovskite system has been grown by a high temperature solution method using the mixture of PbO and H3BO3 as flux (in a molar ratio of 4:2) with an optimum flux:charge molar ratio of 6:1. It is found that the addition of BZT into the relaxor ferroelectric PMN-PT system reduces the number of spontaneous nucleations, resulting in large single crystals (5 mm×5 mm×14 mm) of good quality. The grown crystals exhibit a pseudo-cubic morphology and show evidence of two-dimensional growth mechanism. Examination by polarized light microscopy (PLM) reveals the formation of striation, which can be reduced by changing the growth conditions. The domain structure and phase transition of the PMN-PT-BZT crystals are investigated by PLM. The temperature and frequency dependences of the dielectric permittivity of the grown crystals show typical relaxor ferroelectric behavior, with the frequency dependence of the temperature of maximum permittivity (Tmax) following the Vogel-Fulcher law. The ferroelectric property is displayed in the crystals with a remnant polarization, Pr=21 μC/cm2 and a coercive field, EC=3.5 kV/cm. The piezoelectric coefficient, d33, is found to be 825 pC/N, a value much higher than that of the ternary ceramics.

  8. Relaxor-based solid solutions for piezoelectric and electrostrictive applications

    NASA Astrophysics Data System (ADS)

    Alberta, Edward F.

    This thesis explores the dielectric, piezoelectric, and electrostrictive properties of a number of relaxor ferroelectric-based solid solution systems. The components of these solid solution systems have a variety of characteristics ranging from normal- to relaxor- to anti-ferroelectric. Some of the relaxor end-members investigated were Pb(In1/2Nb1/2)O3 [PIN], Pb(In1/2Ta1/2)O3 [PIT], Pb(Sc 1/2Nb1/2)O3 [PSN], Pb(Ni1/3Nb 2/3)O3 [PNN], Pb(Mg1/3Nb2/3)O 3 [PMN], and Pb(Zn1/3Nb2/3)O3 [PZN]. Several of these systems have Curie temperatures [Tc] that are among the highest known for MPB compositions. Some examples are PIN-0.38PT with a Tc of 319°C, PIT-0.38PT with a Tc of 248°C, and PSN 0.42PT with a Tc of 254°C. While these are slightly lower that those of typically found in PZT, the temperature dependence of the piezoelectric properties was found to be minimal. The electromechanical coupling coefficients were largely unchanged upon heating to as high as 150°C. This is approximately equal to the Tc of PMN-PT and PZN-PT and significantly exceeds the generally accepted maximum operating temperature for these materials. Many of the materials studied were found to have very large electromechanical coupling factors and produce extraordinarily high field-induced strains. Both PSN-0.42PT and PNN-0.15PZ-0.34PT were found to produce strain levels of ˜0.30% under unipolar drive with limited hysteresis. Peak-to-peak strain levels of as much as 0.60% were possible under bipolar drive conditions. Both of these MPB compositions had very large piezoelectric properties, with the slightly larger values of d33 = 810pC/N, kp = 0.69, kt = 0.56, and k33 = 0.80 occurring in PNN-PZ-PT. Each of the MPB compositions studied has features that can be exploited for specific applications. The combination of high Tc and coercive field found in both PIN-PT and Bi(Ni1/2T1/2)O3 -PT should allow these materials to be used at high drive levels and/or at high temperatures. The high strain, low hysteresis

  9. Dielectric Behavior in Ferroelectric Pb5Ge3O11 Powders

    NASA Astrophysics Data System (ADS)

    Goto, Yoshihiro

    1981-02-01

    Dielectric constant of ferroelectric Pb5Ge3O11 powders has been investigated experimentally; low frequency dielectric dispersion around 10 kHz has been observed. The experimental result has been compared with that of the model theory by Nicollian and Goetzberger for a dielectric dispersion which is associated with the electron transition in surface state of the crystal. The qualitative agreement between the present experimental result and the theoretical one suggests an important role of the surface state of Pb5Ge3O11 powder playing on the dielectric dispersion at low frequencies.

  10. SISGR -- Domain Microstructures and Mechanisms for Large, Reversible and Anhysteretic Strain Behaviors in Phase Transforming Ferroelectric Materials

    SciTech Connect

    Wang, Yu U.

    2013-12-06

    This four-year project (including one-year no-cost extension) aimed to advance fundamental understanding of field-induced strain behaviors of phase transforming ferroelectrics. We performed meso-scale phase field modeling and computer simulation to study domain evolutions, mechanisms and engineering techniques, and developed computational techniques for nanodomain diffraction analysis; to further support above originally planned tasks, we also carried out preliminary first-principles density functional theory calculations of point defects and domain walls to complement meso-scale computations as well as performed in-situ high-energy synchrotron X-ray single crystal diffraction experiments to guide theoretical development (both without extra cost to the project thanks to XSEDE supercomputers and DOE user facility Advanced Photon Source).

  11. Origin of ferroelectric polarization in tetragonal tungsten-bronze-type oxides

    NASA Astrophysics Data System (ADS)

    Olsen, Gerhard Henning; Aschauer, Ulrich; Spaldin, Nicola A.; Selbach, Sverre Magnus; Grande, Tor

    2016-05-01

    The origin of ferroelectric polarization in tetragonal tungsten-bronze- (TTB-) type oxide strontium barium niobate (SBN) is investigated using first-principles density functional calculations. We study in particular the relationship between the polarization and the cation and vacancy ordering on alkali-earth metal lattice sites. Lattice dynamical calculations for paraelectric structures demonstrate that all cation configurations that can be accommodated in a 1 ×1 ×2 supercell result in a single unstable polar phonon, composed primarily of relative Nb-O displacements along the polar axis, as their dominant instability. The majority of the configurations also have a second octahedral tilt-mode instability which couples weakly to the polar mode. The existence of the tilt mode is strongly dependent on the local cation ordering, consistent with the fact that it is not found experimentally. Our results suggest that ferroelectricity in the SBN system is driven by a conventional second-order Jahn-Teller mechanism caused by the d0 Nb5 + cations, and demonstrate the strong influence of the size of Sr and Ba on the lattice distortions associated with polarization and octahedral tilting. Finally, we suggest a mechanism for the relaxor behavior in Sr-rich SBN based on Sr displacement inside pentagonal channels in the TTB structure.

  12. Ferroelectric barium titanate nanocubes as capacitive building blocks for energy storage applications.

    PubMed

    Parizi, Saman Salemizadeh; Mellinger, Axel; Caruntu, Gabriel

    2014-10-22

    Highly uniform polymer-ceramic nanocomposite films with high energy density values were fabricated by exploiting the unique ability of monodomain, nonaggregated BaTiO3 colloidal nanocrystals to function as capacitive building blocks when dispersed into a weakly interacting dielectric matrix. Monodisperse, surface-functionalized ferroelectric 15 nm BaTiO3 nanoparticles have been selectively incorporated with a high packing density into poly(vinylidene fluoride-co-hexafluoropropene) (P(VDF-HFP)) leading to the formation of biphasic BaTiO3-P(VDF-HFP) nanocomposite films. A systematic investigation of the electrical properties of the nanocomposites by electrostatic force microscopy and conventional dielectric measurements reveals that polymer-ceramic film capacitor structures exhibit a ferroelectric relaxor-type behavior with an increased intrinsic energy density. The composite containing 7% BaTiO3 nanocrystals displays a high permittivity (ε = 21) and a relatively high energy density (E = 4.66 J/cm(3)) at 150 MV/m, which is 166% higher than that of the neat polymer and exceeds the values reported in the literature for polymer-ceramic nanocomposites containing a similar amount of nanoparticle fillers. The easy processing and electrical properties of the polymer-ceramic nanocomposites make them suitable for implementation in pulse power capacitors, high power systems and other energy storage applications.

  13. Signature of relaxor behaviour in BiFe0.98Co0.02O3

    NASA Astrophysics Data System (ADS)

    Ray, J.; Biswal, A. K.; Kuila, S.; Pradhan, D. K.; Behera, D.; Vishwakarma, P. N.

    2015-06-01

    Frequency dependent dielectric measurements are carried out at several temperatures for BiFe0.98Co0.02O3. A diffuse dielectric anomaly with strong frequency dispersion has been seen ˜ 400K-600K. The temperature corresponding to the maximum of the peak satisfies the Vogel-Fulcher relation and other characteristics of a relaxor ferroelectric. Havrliak-Negami equation equivalent for impedance is found to be well fitting the Cole-Cole plot. The relaxation time obtained from the fitting shows slower dynamics at higher temperatures.

  14. Behavior of frustrated phase in ferroelectric and antiferroelectric liquid crystalline mixtures

    NASA Astrophysics Data System (ADS)

    Pociecha, D.; Glogarová, M.; Gorecka, E.; Mieczkowski, J.

    2000-06-01

    Binary mixtures of two successive homologues from a series of 4-(4'-alkoxy-biphenyl-4-yloxymethyl)benzoic acid 2-octanol esters exhibit a polar phase that differs from both ferroelectric (FE) and antiferroelectric (AF) phases, which exist in the pure compounds. When the concentration of the FE component is increased, this phase gradually changes its polar character from AF-like to FE-like, which is confirmed by the study of dielectric properties. Sample boundaries as well as the dc electric field introduce the FE phase, which remains stable after the field is switched off. Dielectric study confirms that this phase is composed of FE and AF clusters. The clusters arise due to frustration of FE and AF molecular order, which occurs as a result of the lowering of interlayer interactions.

  15. Observation of nonequilibrium behavior near the Lifshitz point in ferroelectrics with incommensurate phase

    NASA Astrophysics Data System (ADS)

    Rushchanskii, K. Z.; Molnar, A.; Bilanych, R.; Yevych, R.; Kohutych, A.; Vysochanskii, Yu. M.; Samulionis, V.; Banys, J.

    2016-01-01

    We have investigated nonequilibrium properties of proper uniaxial Sn2P2(SexS1-x) 6 ferroelectrics with the type II incommensurate phase above Lifshitz point xLP˜0.28 . We performed measurements of dielectric susceptibility in cooling and heating regimes with the rate ranging 0.002-0.1 K/min, as well as high-resolution ultrasound investigation and hypersound Brillouin scattering experiments. For samples with x ≥0.28 clear anomalies are observed at incommensurate second-order transition (Ti) and at first-order lock-in transition (Tc) in the regime of very slow cooling rate, whereas the intermediate incommensurate phase is not observed when the rate is faster than 0.1 K/min. In general, increasing the cooling rate leads to smearing of the anomaly at Tc. We relate this effect to cooling rate dependence of domain-wall concentration and their size: domain width decreases when cooling rate increases. At certain conditions, the size of domain is comparable to the incommensurate phase modulation period, which is in the micrometer range in the vicinity of Lifshitz point and leads to pinning of the modulation period by domain walls.

  16. Behavior of inclusions with different value and orientation of topological dipoles in ferroelectric smectic films

    SciTech Connect

    Dolganov, P. V. Dolganov, V. K.; Cluzeau, P.

    2009-07-15

    Cholesteric droplets in ferroelectric free-standing films with tunable anchoring on the droplet boundary are investigated. A droplet and satellite topological defect(s) form a topological dipole. We obtained droplets with different angles {alpha} between two radial lines from the droplet center to -1/2 topological defects. Droplets with parallel dipoles form linear chains in which the interparticle distances decrease with increasing the defect angle {alpha}. For the first time, the dependence of the interparticle distance on the angle between topological defects was measured. We can adjust the magnitude and orientation of topological dipoles formed by the droplets. For the first time, the droplets with antiparallel topological dipoles were prepared in a smectic film. Interaction of the droplets with parallel and antiparallel dipoles differs drastically. Formation of antiparallel dipoles leads to a decomposition of the droplet pairs and chains of droplets. Our observations may be used to change the magnitude, anisotropy of the interparticle interaction, and structures of inclusions in liquid crystal media.

  17. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  18. Dielectric relaxor behaviors and tunability of (1- x)Ba(Zr0.2Ti0.8)O3- x(Ba0.7Ca0.3)TiO3 thin films fabricated by sol-gel method

    NASA Astrophysics Data System (ADS)

    Lin, Yanting; Qin, Ni; Wu, Guangheng; Sa, Tongliang; Bao, Dinghua

    2012-11-01

    Temperature dependence of dielectric properties of (1- x)Ba(Zr0.2Ti0.8)O3- x(Ba0.7Ca0.3)TiO3 ( x=0.15, 0.30, and 0.50) (BZT- xBCT) thin films prepared by a sol-gel method has been investigated. The results show that there is a broad dielectric maximum near T m and the diffuse parameter γ is close to 2, indicating a nearly complete diffuse phase transition in BZT- xBCT thin films. The dielectric relaxor behaviors of the thin films well follow Vogel-Fulcher relation. The thin films show a high dielectric tunability up to 65 %, with a small variation in the temperature range from 248.15 to 373.15 K. This study indicates that the thin films, especially for x=0.50, are promising candidates for tunable device applications with good temperature stability.

  19. Origin of the "waterfall" effect in phonon dispersion of relaxor perovskites.

    PubMed

    Hlinka, J; Kamba, S; Petzelt, J; Kulda, J; Randall, C A; Zhang, S J

    2003-09-01

    We have undertaken an inelastic neutron scattering study of the perovskite relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O3 with 8% PbTiO3 (PZN-8%PT) in order to elucidate the origin of the previously reported unusual kink on the low frequency transverse phonon dispersion curve (known as the "waterfall effect"). We show that its position (q(wf)) depends on the choice of the Brillouin zone and that the relation of q(wf) to the size of the polar nanoregions is highly improbable. The waterfall phenomenon is explained in the framework of a simple model of coupled damped harmonic oscillators representing the acoustic and optic phonon branches.

  20. Nonlinear-optic and ferroelectric behavior of lithium borate{endash}strontium bismuth tantalate glass{endash}ceramic composite

    SciTech Connect

    Senthil Murugan, G.; Varma, K. B. R.; Takahashi, Yoshihiro; Komatsu, Takayuki

    2001-06-18

    Transparent glasses in the system (100{endash}x) Li{sub 2}B{sub 4}O{sub 7}{endash}xSrBi{sub 2}Ta{sub 2}O{sub 9} (0{le}x{le}20) were fabricated via a splat-quenching technique. The glassy nature of the as-quenched samples was established by differential thermal analyses. X-ray powder diffraction and transmission electron microscopic studies confirmed the amorphous nature of the as-quenched and crystallinity (40 nm) in the heat-treated (glass{endash}ceramic) samples. The dielectric constant ({epsilon}{sub r}) of the glass{endash}ceramic composite (x=20, heat treated at 773 K/8 h) was in between that of the parent host glass (Li{sub 2}B{sub 4}O{sub 7}) and strontium bismuth tantalate ceramics in the frequency range 100 Hz{endash}40 MHz at 300 K. These exhibited intense second-harmonic generation and a ferroelectric hysteritic behavior (P vs E loops) at 300 K. The coercive field (E{sub c}) and the remnant polarization (P{sub r}) were 1053 V/cm and 0.483 {mu}C/cm2, respectively. {copyright} 2001 American Institute of Physics.

  1. In situ transmission electron microscopy study of the microstructural origins for the electric field-induced phenomena in ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Guo, Hanzheng

    an unusual behavior is attributed to the electric field-induced irreversible P4bm nanodomains coalescence into thin lamellar domains prior to the phase transition. In the (K0.5 Na0.5)NbO3-based ceramics, as demonstrated by an archetypical polymorphic phase boundary (PPB) composition of 0.948(K 0.5Na0.5)NbO3-0.052LiSbO3, the origin of the excellent piezoelectric performance is due to a tilted monoclinic phase that emerges from the tetragonal and orthorhombic PPB at the poling fields beyond 14 kV/cm. This monoclinic phase, as manifested by the appearance of blotchy domains and 1/2{oeo} superlattice diffraction spots, was determined to possess a Pm symmetry with a 0b+c0 oxygen octahedra tilting and antiparallel cation displacements. For the PPB composition of x = 0.5 in the (1-x)Ba(Zr0.2Ti0.8 )O3-x(Ba0.7Ca0.3)TiO 3 solid solution system, the original multi-domain state was found to transform into a unique single-domain state with orthorhombic symmetry at very moderate poling fields of 3 6 kV/cm. This single-domain state is suggested to be primarily responsible for the observed large piezoelectricity due to its significant elastic softening. In the electrical reversal process, a highly unusual phenomenon of electric field-induced ferroelectric-to-relaxor phase transition was directly observed in a lead-free composition of [(Bi1/2Na1/2)0.95 Ba0.05]0.98La0.02TiO3. It is manifested by the disruption of large ferroelectric domains with long range polar order into polar nanodomains with short range orders when the polarity of electric field is reversed. This observation was further rationalized by a phenomenological model that takes the large difference in kinetics between the phase transition and the polarization reversal processes into account. During the electrical cycling process, the microstructural mechanisms for electric fatigue behaviors of two ceramics were investigated. In 0.7Pb(Mg 1/3Nb2/3)O3-0.3PbTiO3, the frozen domain configuration after 103 cycles is

  2. Collective dipole behavior and unusual morphotropic phase boundary in ferroelectric Pb(Zr(0.5)Ti(0.5))O3 nanowires.

    PubMed

    Fu, Xiujun; Naumov, Ivan I; Fu, Huaxiang

    2013-02-13

    Dipole collective behavior and phase transition in ferroelectric (FE) Pb(Zr(0.5)Ti(0.5))O(3) nanowires, caused by modulated electric fields, are reported. Our result also leads to the finding of a rather outstanding electromechanical d(31) response in a 8.4 nm diameter PZT wire, which may potentially outperform bulk PMN-PT and PZN-PT. Moreover, we further demonstrate the existence of a new type of morphotropic phase boundary (MPB) that bridges two dissimilar structure phases of different order parameters. Microscopic insights for understanding the collective behavior and the structural phase within the new MPB are provided. PMID:23256599

  3. A flexible tactile-feedback touch screen using transparent ferroelectric polymer film vibrators

    NASA Astrophysics Data System (ADS)

    Ju, Woo-Eon; Moon, Yong-Ju; Park, Cheon-Ho; Choi, Seung Tae

    2014-07-01

    To provide tactile feedback on flexible touch screens, transparent relaxor ferroelectric polymer film vibrators were designed and fabricated in this study. The film vibrator can be integrated underneath a transparent cover film or glass, and can also produce acoustic waves that cause a tactile sensation on human fingertips. Poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] polymer was used as the relaxor ferroelectric polymer because it produces a large strain under applied electric fields, shows a fast response, and has excellent optical transparency. The natural frequency of this tactile-feedback touch screen was designed to be around 200-240 Hz, at which the haptic perception of human fingertips is the most sensitive; therefore, the resonance of the touch screen at its natural frequency provides maximum haptic sensation. A multilayered relaxor ferroelectric polymer film vibrator was also demonstrated to provide the same vibration power at reduced voltage. The flexible P(VDF-TrFE-CTFE) film vibrators developed in this study are expected to provide tactile sensation not only in large-area flat panel displays, but also in flexible displays and touch screens.

  4. Giant magnetoelectric effect in thin magnetic films utilizing inter-ferroelectric transitions

    NASA Astrophysics Data System (ADS)

    Finkel, Peter; Staruch, Margo

    There has recently been much interest to multiferroic magnetoelectric composites based on relaxor ferroelectric single crystals as potential candidates for devices such as magnetic field sensors, energy harvesters, or transducers. Large magnetoelectric coupling coefficient is prerequisite for superior device performance in a broad range of frequencies and functioning conditions. In magnetoelectric heterostructures based on ternary relaxors Pb(In1/2Nb1/2) O3-Pb(Mg1/3Nb2/3) O3-PbTiO3 (PIN-PMN-PT) crystal better operational range and temperature stability as compared to binary relaxors can be achieved. Giant linear converse magnetoelectric coupling up to 2 x 10-6 s m-1 were observed in heterostructural composites with multilayered FeCo/Ag deposited on (011) PIN-PMN-PT crystals. Further enhancement of magnetoelectric coupling is demonstrated by utilizing inter-ferroelctric rhombohedral - orthorhombic phase transitions in PIN-PMN-PT Mechanical clamping was a precondition to utilize this inter-ferroelectric transition mode to bring the crystal to a point just below its transformation threshold when very small perturbations at the input will cause large swings at the output generating a sharp uniaxial increase in strain (~0.5 %) and polarization change, giving rise to nonlinear effects. Details of these results and their implications will be presented. Giant magnetoelectric effect in thin magnetic fillms utilizing inter-ferroelectric transitions.

  5. Interaction of Terahertz Radiation with Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nelson, Keith

    2007-03-01

    Ferroelectric crystals have long been used as acoustic transducers and receivers. An extensive toolset has been developed for MHz-frequency acoustic wave generation, control, guidance, and readout. In recent years, an analogous toolset has been developed for terahertz wave transduction and detection. Femtosecond optical pulses irradiate ferroelectric crystals to generate responses in the 0.1-5 THz frequency range that are admixtures of electromagnetic and polar lattice vibrational excitations called phonon-polaritons. Spatiotemporal femtosecond pulse shaping may be used to generate additional optical pulses that arrive at specified times and sample locations for control and manipulation of the THz waves. Femtosecond laser machining may be used for fabrication of waveguides, resonators, and other structures that are integrated into the ferroelectric host crystal. Finally, real-space imaging of the THz fields can be executed with variably delayed femtosecond probe pulses, permitting direct visualization of THz wave spatial and temporal evolution. This ``polaritonics'' toolset enables multiplexed generation of arbitrary THz waveforms and use of the waveforms within the ferroelectric host crystal or after projection into free space or an adjacent medium. The polaritonics platform will be reviewed and several new developments and applications will be presented. These include spectroscopy of relaxor ferroelectrics, whose temperature-dependent dielectric responses in the GHz-THz regime reveal complex polarization dynamics on well separated fast and slow time scales; direct measurement of phonon-polariton lattice vibrational displacements through femtosecond time-resolved x-ray diffraction; generation of high polariton field amplitudes and pulse energies; use of large-amplitude polariton waves to drive nonlinear lattice vibrational responses; and enhancement of optical-to-THz conversion efficiency through a pseudo-phase-matching approach that circumvents the very large

  6. Domains in Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Gregg, Marty

    2010-03-01

    Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device

  7. Structural, dielectric, ferroelectric, and electrocaloric properties of 2% Gd2O3 doping (Na0.5Bi0.5)0.94Ba0.06TiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Turki, O.; Slimani, A.; Seveyrat, L.; Sebald, G.; Perrin, V.; Sassi, Z.; Khemakhem, H.; Lebrun, L.

    2016-08-01

    Structural, dielectric, and ferroelectric properties, and electrocaloric effects of pure and Gd doped ( Na0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 ceramics prepared by the conventional solid-solid method have been carried out. The X-ray diffraction analysis confirms a pure perovskite structure with the coexistence of tetragonal and rhombohedra structures in both powders. The thermal and frequency dependences of the dielectric constants of both ceramics revealed relaxor behavior. The two compounds exhibited two phase transitions: ferroelectric/antiferroelectric (FE/AFE) transition followed by an antiferroelectric/paraelectric (AFE/PE) transition at higher temperatures. Remarkably, we noticed that the small amount of Gd doping (2%) highly enhanced the dielectric properties of the parent compound by about 71%. The phase diagram was as well influenced by the Gd doping, where the FE/AFE transition temperature rose from 90 in the parent compound to 115 °C in the doped one whereas the AFE/PE transition temperature was decreased from 320 to 270 °C, respectively. The direct electrocaloric measurements performed on both compounds showed that the ferroelectric/antiferroelectric phase transition was accompanied by a significant electrocaloric effect. The Gd3+ doping improved the electrocaloric properties of the parent compound, where a remarkable temperature variation of 1.4 K was obtained in the doped ceramic. The results of the direct electrocaloric measurements will be compared and discussed with those derived from the indirect method.

  8. Ferroelectric tunnel memristor.

    PubMed

    Kim, D J; Lu, H; Ryu, S; Bark, C-W; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-11-14

    Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height. PMID:23039785

  9. Ferroelectric tunnel memristor.

    PubMed

    Kim, D J; Lu, H; Ryu, S; Bark, C-W; Eom, C-B; Tsymbal, E Y; Gruverman, A

    2012-11-14

    Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged as a new paradigm for nonvolatile memories and adaptive electronic circuit elements. Employment of memristors can radically enhance the computational power and energy efficiency of electronic systems. Most of the existing memristor prototypes involve transition metal oxide resistive layers where conductive filaments formation and/or the interface contact resistance control the memristive behavior. In this paper, we demonstrate a new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage. The ferroelectric tunnel memristors exhibit a reversible hysteretic nonvolatile resistive switching with a resistance ratio of up to 10(5) % at room temperature. The observed memristive behavior is attributed to the field-induced charge redistribution at the ferroelectric/electrode interface, resulting in the modulation of the interface barrier height.

  10. Why is the electrocaloric effect so small in ferroelectrics?

    NASA Astrophysics Data System (ADS)

    Guzmán-Verri, G. G.; Littlewood, P. B.

    2016-06-01

    Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  11. A theoretical study of soft mode behavior and ferroelectric phase transition in 18O-isotope exchanged SrTiO3: evidence of phase coexistence at the quantum critical point

    NASA Astrophysics Data System (ADS)

    Mkam Tchouobiap, S. E.

    2014-02-01

    Motivated by recent experiments, the dynamics of the ferroelectric soft mode and the ferroelectric phase transition mechanism in 18O isotope exchanged systems SrTi(16O1-x18Ox)3 (abbreviated as STO18-x) are reinvestigated as a function of the 18O isotope exchange rate x, within a quasiharmonic model (QHM) for quantum ferroelectric modes in double-Morse local potential with mean-field approximation interactions between modes. The approach was realized within the framework of the variational principle method at finite temperature through the quantum mean-field approximation and by taking into account the effect of isotope replacement through the predominant mass effect, the cell volume effect, homogeneity of the composition throughout the material and the concentration-dependent ferroelectric mode distortion effect. The dynamics of the lowest-frequency soft phonon mode clearly presents an increased softening phenomenon with increasing x and a complete one at the corresponding phase transition temperature Tc, demonstrating the perfect soft-mode-type quantum ferroelectric phase transition for x ⩾ xc. Also, a ferroelectric-paraelectric phase coexistence state has been found near the quantum critical point xc and its origin is discussed. The ferroelectric phase transition mechanism is analyzed and its nature discussed, where a second-order phase transition close to the tricritical point is predicted. In addition, the effect of quantum fluctuations on the soft mode dynamics is discussed which reveals its reduction with increasing x and the crossover of the soft mode dynamics from the quantum to the classic one at the full 18O exchange limit x = 1, for which the origin seems to lie in the new homogeneity associated with the direct reduction of quantum fluctuations effects on the soft mode behavior. Within the QHM, consistent agreement with some of the previous experimental results and theoretical predictions of quantum ferroelectricity throughout the full range of x are

  12. Dynamics of nano-cluster in a new relaxor system: (PbMg 1/3Nb 2/3O 3)/(BiFeO 3)

    NASA Astrophysics Data System (ADS)

    Sahoo, M. P. K.; Choudhary, R. N. P.

    2010-07-01

    We report the dynamical role of nano-clusters in controlling the physical properties and parameters of a new relaxor complex, (PbMg 1/3Nb 2/3)O 3/(BiFeO 3). This complex shows a gradual structural change from cubic to hexagonal crystal system with increasing BiFeO 3 content. Transmission electron microscopy (TEM) reveals the presence of scattered nano-clusters for (PbMg 1/3Nb 2/3)O 3 relaxor system which starts assembling for increasing value of BiFeO 3. As a consequence of this assembling, a crossover from relaxor to ferroelectric and dielectric peak broadening was observed. Corresponding change in physical parameters such as; Curie-Weiss and Uchino-Nomura parameters i.e., Δ Tcm and diffusivity ' γ' was also observed. Vogel-Fulcher (V-F) fitting was employed to calculate the activation energy required to activate the dipolar glasses into a dynamical state or to re-establish a polarization fluctuation around an isolated nano-cluster. V-F fitting shows increased activation energy for increasing cluster size. The suppression in polarization value shows the inability of the total dipole moment to reorient on application of electric field with growth/assembling of nano-clusters.

  13. Heterophase fluctuations near Tc in the relaxor ferroelectrics (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (x =0.09) studied by x-ray diffuse scattering and coherent x-ray scattering

    NASA Astrophysics Data System (ADS)

    Ohwada, Kenji; Mizuki, Jun'ichiro; Matsushita, Mitsuyoshi; Namikawa, Kazumichi

    2014-09-01

    The paraelectric (PE) to ferroelectric (FE) first-order phase transition of (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (x =0.09) (Tcc=455 K on cooling) has been studied by the complementary use of x-ray diffuse scattering (XDS) and coherent x-ray scattering (CXS). XDS was mainly used to investigate the FE regions, while CXS was mainly used to investigate the PE regions above Tcc on cooling. The diffuse scattering intensity due to the appearance of FE regions shows a maximum at Tmax=460 K. The diffuse scattering is dynamic in nature and the softening trend changes to a hardening trend at Tmax. This means that the FE instability is maximum at Tmax and therefore the FE regions are well stabilized below Tmax. The spatial autocorrelation function obtained by CXS, corresponding to the texture of PE regions, starts to rapidly change at about Tmax and is most unstable at Tcc. We conclude that a heterophase fluctuation occurs between Tcc and Tmax near the phase transition. The heterophase fluctuation can be expected to correlate to the low-frequency dielectric dispersion and contribute to the phase transition as a precursor phenomenon of the first-order phase transition.

  14. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy.

    PubMed

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I; Yu, Pu; Kalinin, Sergei V

    2015-06-23

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. We will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In the end, we apply the developed measurement protocols to an unknown ferroelectric material.

  15. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  16. Structural and relaxor-like dielectric properties of unfilled tungsten bronzes Ba5-5xSm5xTi5xNb10-5xO30

    NASA Astrophysics Data System (ADS)

    Wei, T.; Dong, Z.; Zhao, C. Z.; Guo, Y. Y.; Zhou, Q. J.; Li, Z. P.

    2016-03-01

    New unfilled tetragonal tungsten bronze (TTB) oxides, Ba5-5xSm5xTi5xNb10-5xO30 (BSTN-x), where 0.10 ≤ x ≤ 0.35, have been synthesized in this work. Their crystal structure was determined and analyzed based on Rietveld structural refinement. It is found that single TTB phase can be formed in a particular x range (i.e., 0.15 ≤ x ≤ 0.3) due to the competition interaction between tolerance factor and electronegativity difference. Furthermore, dielectric and ferroelectric results indicate that phase transitions and ferroelectric states are sensitive to x. Referring to the local chemistry, we suggest that the raise of vacancies at the A2-site compared with that of A1-site will intensely depress the normal ferroelectric phase and is in favor of relaxor ferroelectric state. Macroscopically, previous A-site size difference standpoint on fill TTB compounds cannot give a reasonable explanation about the variation of dielectric maximum temperature (Tm) for present BSTN-x compounds. Alternatively, tetragonality (c/a) is adopted which can well describe the variation of Tm in whole x range. In addition, one by one correspondence between tetragonality and electrical features can be found, and the compositions involving high c/a are usually stabilized in normal ferroelectric phase. It is believed that c/a is a more appropriate parameter to illustrate the variation of ferroelectric properties for unfilled TTB system.

  17. High Piezoelectric Response in (Li0.5Sm0.5)2+-Modified 0.93Bi0.5Na0.5TiO3-0.07BaTiO3 Near the Nonergodic-Ergodic Relaxor Transition

    NASA Astrophysics Data System (ADS)

    Xu, Jiwen; Li, Qinglin; Zhou, Changrong; Zeng, Weidong; Xiao, Jianrong; Ma, Jiafeng; Yuan, Changlai; Chen, Guohua; Rao, Guanghui; Li, Xuqiong

    2016-06-01

    The (Bi0.5Na0.5)TiO3-BaTiO3 system is a promising Pb-free piezoelectric material to substitute for environmentally undesirable Pb-based ferroelectrics. However, understanding the origin of its high piezoelectric response is a fundamental issue that has remained unclear for decades. Here, complex ions (Li0.5Sm0.5)2+ were introduced to dictate the stability of the electrically-induced ferroelectric state in 0.93(Bi0.5Na0.5)1- x (Li0.5Sm0.5) x TiO3-0.07BaTiO3 relaxor ceramics. The applied electric field induces a phase transition from a non-ergodic state to a ferroelectric state as well as the realignment of ferroelectric domains. The non-ergodic relaxor state with x = 0-0.02 is accompanied by relatively high piezoelectric activity and the strongest piezoelectricity is observed near the crossover from the nonergodic to the ergodic state. The stable␣ferroelectric state cannot survive after the removal of the application electric field for the high doping level due to the enhancement of the random field, which is responsible for the rapid decrease of piezoelectric properties for x > 0.02 compositions.

  18. Theoretical approach to study the effect of free volumes on the physical behavior of polymer stabilized ferroelectric liquid crystal molecules

    NASA Astrophysics Data System (ADS)

    Lahiri, T.; Majumder, T. Pal

    2011-06-01

    It was clearly indicative that the polymer chains make a tremendous interaction with the tilt angle in case of a polymer stabilized ferroelectric liquid crystal (PSFLC). After suitable consideration of such interaction, we expanded the Landau free energy for a PSFLC system. We theoretically demonstrated the effect of free volumes, which expected to create bulk self-energy, on the physical functionalities of a PSFLC system. Then we obtained spontaneous polarization, tilt angle, rotational viscosity and dielectric constant strongly correlated with the assumed interactions. We also observed a shift of transition temperature highly influenced by this interaction between polymer network and liquid crystal molecules. A microscopical picture of this polymer-liquid crystal interaction is provided in view of the free volume charge density present in the composite system.

  19. Ferroelastic Behavior in Relaxor 24Pb(In1/2Nb1/2)O3--46Pb(Mg1/3Nb2/3)O3--30PbTiO3 under Shear Stresses along [001] Direction

    NASA Astrophysics Data System (ADS)

    Yasuda, Naohiko; Hidayah, Nur; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Hlinka, Ing. Jiri; Iwata, Makoto; Terauchi, Hikaru; Ishibashi, Yoshihiro

    2013-05-01

    The ferroelastic behavior of relaxor 24Pb(In1/2Nb1/2)O3--46Pb(Mg1/3Nb2/3)O3--30PbTiO3 (PIN--PMN--PT) solid-solution single crystals was investigated under shear stresses using polarization light microscopy (PLM) and the scanning electron microscopy (SEM). Optical strain patterns along the \\{110\\}cub directions from the orthoscope images under crossed Nicol, induced by shear stresses applied along the [001]cub direction, making use of a Vickers microindenter with a square-base diagonal line oriented along the \\{100\\}cub directions of the crystal were observed on its (001)cub plate for the first time. These patterns at a diagonal position reveal a flowerlike pattern for ferroelastic transition from a square (S) lattice to a rectangular (R) lattice in a two-dimensional model system. A change in the interference color from yellow to blue through red toward the center in their flower leaves, according to the Michel--Levy birefringence chart, was observed. The patterns at the extinction position reveal starlike patterns coupled with lobes also due to orthorhombic and/or tetragonal twin domain structures. A blue shift (corresponding to addition in retardation) and a yellow shift (corresponding to subtraction in retardation) in color at each flower leaf in the [110]cub and [1\\bar{1}0]cub directions were respectively observed using a sensitive color plate. Such shifts in color correspond to oxygen octahedra being rotated in a staggered sense about the perovskite axis. The patterns appearing strongly along the \\{110\\}cub directions in spite of slip lines along the [100]cub, [010]cub, and [110]cub directions indicate the existence of a rotational preferred orientation in twin domain structures based on a pretransitional tweed domain structure due to platelets observed by SEM, leading to their superior piezoelectric properties due to large shear modes.

  20. Electronic transitions and dielectric functions of relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals: Temperature dependent spectroscopic study

    NASA Astrophysics Data System (ADS)

    Zhu, J. J.; Zhang, J. Z.; Xu, G. S.; Zhang, X. L.; Hu, Z. G.; Chu, J. H.

    2014-03-01

    Optical properties and phase transitions of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) crystals near morphotropic phase boundary (MPB) have been investigated by temperature dependent transmittance and reflectance spectra. Three critical point energies Eg = 3.17-3.18 eV, Ea = 3.41-3.61 eV, and Eb = 4.74-4.81 eV can be assigned to the transitions from oxygen 2p to titanium d, niobium d, and lead 6p states, respectively. They show narrowing trends with increasing temperature, which can be caused by thermal expansion of the lattice and electron-phonon interaction. Deviation from the linear behaviors can be observed from Ea and Eb versus PT concentration, indicating a complex multiphase structure near MPB region.

  1. Ferroelectric polymer nanostructures: fabrication, structural characteristics and performance under confinement.

    PubMed

    Guo, Dong; Zeng, Fei; Dkhil, Brahim

    2014-02-01

    Ferroelectric polymers have recently attracted tremendous research interest due to their potential application in various emerging flexible devices. Nanostructured ferroelectric polymer materials, such as nanorods, nanotube, and nanowires, are essential for miniaturization of the relevant electronic components. More importantly, their improved sensitivity and functionality may be used to enhance the performance of existing devices or to develop and design new devices. In this article, the recently developed methods for fabricating ferroelectric polymer nanostructures are briefly reviewed. In particular, the distinct crystallization behaviors confined at the nanometer scale, the nanoconfinement induced structural change, their influence on the physical properties of the ferroelectric polymer nanostructures, and the possible underlying mechanisms are discussed.

  2. A ferroelectric liquid crystal conglomerate composed of racemic molecules

    PubMed

    Walba; Korblova; Shao; Maclennan; Link; Glaser; Clark

    2000-06-23

    We describe the design and synthesis of a ferroelectric liquid crystal composed of racemic molecules. The ferroelectric polarization results from spontaneous polar symmetry breaking in a fluid smectic. The ferroelectric phase is also chiral, resulting in the formation of a mixture of macroscopic domains of either handedness at the isotropic-to-liquid crystal phase transition. This smectic liquid crystal is thus a fluid conglomerate. Detailed investigation of the electrooptic and polarization current behavior within individual domains in liquid crystal cells shows the thermodynamically stable structure to be a uniformly tilted smectic bow-phase (banana phase), with all layer pairs homochiral and ferroelectric (SmC(S)P(F)).

  3. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage.

    PubMed

    Cai, Ronggang; Kassa, Hailu G; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H; Ruzié, Christian; van Breemen, Albert J J M; Gelinck, Gerwin H; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M

    2016-03-21

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.

  4. Electronic transitions and dielectric functions of relaxor ferroelectric Pb(In{sub 1∕2}Nb{sub 1∕2})O{sub 3}-Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} single crystals: Temperature dependent spectroscopic study

    SciTech Connect

    Zhu, J. J.; Zhang, J. Z.; Chu, J. H.; Xu, G. S.; Zhang, X. L.; Hu, Z. G.

    2014-03-31

    Optical properties and phase transitions of Pb(In{sub 1∕2}Nb{sub 1∕2})O{sub 3}-Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} (PIN-PMN-PT) crystals near morphotropic phase boundary (MPB) have been investigated by temperature dependent transmittance and reflectance spectra. Three critical point energies E{sub g} = 3.17–3.18 eV, E{sub a} = 3.41–3.61 eV, and E{sub b} = 4.74–4.81 eV can be assigned to the transitions from oxygen 2p to titanium d, niobium d, and lead 6p states, respectively. They show narrowing trends with increasing temperature, which can be caused by thermal expansion of the lattice and electron-phonon interaction. Deviation from the linear behaviors can be observed from E{sub a} and E{sub b} versus PT concentration, indicating a complex multiphase structure near MPB region.

  5. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  6. Super Stable Ferroelectrics with High Curie Point

    PubMed Central

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  7. Super Stable Ferroelectrics with High Curie Point

    NASA Astrophysics Data System (ADS)

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  8. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  9. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-07

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  10. Perovskite ferroelectric nanomaterials

    NASA Astrophysics Data System (ADS)

    Nuraje, Nurxat; Su, Kai

    2013-09-01

    In this review, the main concept of ferroelectricity of perovskite oxides and related materials at nanometer scale and existing difficulties in the synthesis of those nanocrystals are discussed. Important effects, such as depolarization field and size effect, on the existence of ferroelectricity in perovskite nanocrystals are deliberated. In the discussion of modeling works, different theoretical calculations are pinpointed focusing on their studies of lattice dynamics, phase transitions, new origin of ferroelectricity in nanostructures, etc. As the major part of this review, recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials, such as BaTiO3, PbTiO3, PbZrO3, and BiFeO3, are also scrutinized. Perspectives concerning the future direction of ferroelectric nanomaterials research and its potential applications in renewable energy, etc., are presented. This review provides an overview in this area and guidance for further studies in perovskite ferroelectric nanomaterials and their applications.In this review, the main concept of ferroelectricity of perovskite oxides and related materials at nanometer scale and existing difficulties in the synthesis of those nanocrystals are discussed. Important effects, such as depolarization field and size effect, on the existence of ferroelectricity in perovskite nanocrystals are deliberated. In the discussion of modeling works, different theoretical calculations are pinpointed focusing on their studies of lattice dynamics, phase transitions, new origin of ferroelectricity in nanostructures, etc. As the major part of this review, recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials, such as BaTiO3, PbTiO3, PbZrO3, and BiFeO3, are also scrutinized. Perspectives concerning the future direction of ferroelectric nanomaterials research and its potential applications in renewable

  11. Simultaneous Stress and Field Control of Sustainable Switching of Ferroelectric Phases.

    PubMed

    Finkel, P; Staruch, M; Amin, A; Ahart, M; Lofland, S E

    2015-01-01

    In ferroelectrics, manifestation of a strong electromechanical coupling is attributed to both engineered domain morphology and phase transformations. However, realization of large sustainable and reversible strains and polarization rotation has been limited by fatigue, nonlinearity and hysteresis losses. Here, we demonstrate that large strain and polarization rotation can be generated for over 40 × 10(6) cycles with little fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cut Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal. Direct tuning of this effect through combination of stress and applied electric field, confirmed both macroscopically and microscopically with x-ray and Raman scattering, reveals the local symmetry while sweeping through the transition with a low applied electric field (<0.2 MV/m) under mechanical stress. The observed change in local symmetry as determined by x-ray scattering confirms a proposed polarization rotation mechanism corresponding to a transition between rhombohedral and orthorhombic phases. These results shed more light onto the nature of this reversible transformation between two ferroelectric phases and advance towards the development of a wide range of ferroic and multiferroic devices. PMID:26345729

  12. Simultaneous Stress and Field Control of Sustainable Switching of Ferroelectric Phases

    NASA Astrophysics Data System (ADS)

    Finkel, P.; Staruch, M.; Amin, A.; Ahart, M.; Lofland, S. E.

    2015-09-01

    In ferroelectrics, manifestation of a strong electromechanical coupling is attributed to both engineered domain morphology and phase transformations. However, realization of large sustainable and reversible strains and polarization rotation has been limited by fatigue, nonlinearity and hysteresis losses. Here, we demonstrate that large strain and polarization rotation can be generated for over 40 × 106 cycles with little fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cut Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal. Direct tuning of this effect through combination of stress and applied electric field, confirmed both macroscopically and microscopically with x-ray and Raman scattering, reveals the local symmetry while sweeping through the transition with a low applied electric field (<0.2 MV/m) under mechanical stress. The observed change in local symmetry as determined by x-ray scattering confirms a proposed polarization rotation mechanism corresponding to a transition between rhombohedral and orthorhombic phases. These results shed more light onto the nature of this reversible transformation between two ferroelectric phases and advance towards the development of a wide range of ferroic and multiferroic devices.

  13. Simultaneous Stress and Field Control of Sustainable Switching of Ferroelectric Phases

    PubMed Central

    Finkel, P.; Staruch, M.; Amin, A.; Ahart, M.; Lofland, S.E.

    2015-01-01

    In ferroelectrics, manifestation of a strong electromechanical coupling is attributed to both engineered domain morphology and phase transformations. However, realization of large sustainable and reversible strains and polarization rotation has been limited by fatigue, nonlinearity and hysteresis losses. Here, we demonstrate that large strain and polarization rotation can be generated for over 40 × 106 cycles with little fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cut Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal. Direct tuning of this effect through combination of stress and applied electric field, confirmed both macroscopically and microscopically with x-ray and Raman scattering, reveals the local symmetry while sweeping through the transition with a low applied electric field (<0.2 MV/m) under mechanical stress. The observed change in local symmetry as determined by x-ray scattering confirms a proposed polarization rotation mechanism corresponding to a transition between rhombohedral and orthorhombic phases. These results shed more light onto the nature of this reversible transformation between two ferroelectric phases and advance towards the development of a wide range of ferroic and multiferroic devices. PMID:26345729

  14. Hierarchical Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 near a Morphotropic Phase Boundary Composition Grown by Bridgman Method

    NASA Astrophysics Data System (ADS)

    Yasuda, Naohiko; Fuwa, Tomohiro; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Fujita, Kazuhiko; Iwata, Makoto; Terauchi, Hikaru; Ishibashi, Yoshihiro

    2011-09-01

    The domain structures of the lead-based relaxor ferroelectric solid solution single crystal, 24Pb(In1/2Nb1/2)O3 (PIN)-46Pb(Mg1/3Nb2/3)O3 (PMN)-30PbTiO3 (PT), near a morphotropic phase boundary (MPB) composition grown by the Bridgeman method were studied by polarized light microscopy (PLM), piezoresponse force microscopy (PFM) and scanning electron microscopy (SEM). The change in domain structures with poling from rhombohedral spindlelike domains of 3-5 µm width to orthorhombic domains of ˜20 µm width with rectangular cells with a size of 3-5 µm, characterized with an antiferroelectic double hysteresis loop in the electric field-induced strain behavior, was found. Such domain structures were microscopically identified from SEM images as small circular tetragonal defects, planar monoclinic defects such as edge and screw dislocations with Burgers vector b along <110>cub and/or <100>cub directions and their agglomerate rectangular orthorhombic defects, also characterized by PFM. Hierarchical domain structures are discussed from the viewpoints of domain structures due to defects such as edge and screw dislocations originating in the chemical order region (COR) and the piezoelectric responses and dielectric properties.

  15. Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film

    SciTech Connect

    Yang, Sang Mo; Jang, S. Y.; Kim, T. H.; Kim, Hun-Ho; Lee, Ho Nyung; Yoon, J. -G.

    2011-01-01

    We investigated the scaling behavior of ferroelectric (FE) hysteresis loops as a function of the applied field amplitude (E{sub 0}) in a high-quality epitaxial PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT) thin film. We observed that the areas of the polarization-electric field hysteresis loops (A) followed the scaling law A {proportional_to} E{sub 0}{sup {alpha}}, with the exponent {alpha} = 0.45 {+-} 0.01. This result is in excellent agreement with the theoretical prediction of {alpha} by the two-dimensional Ising model. In addition, we found that the coercive field (E{sub C}) showed E{sub C} {proportional_to} E{sub 0}{sup {gamma}} with the exponent {gamma} = 0.28 {+-} 0.01. We attribute this relationship to the difference in the sweep rate of the field amplitude E{sub 0}. From the obtained {gamma} value, the growth dimension of FE domains is found to be about 1.68 in our epitaxial PZT thin film.

  16. A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

    SciTech Connect

    Zhao, W.X.; Sun, B.; Liu, Y.H.; Wei, L.J.; Li, H.W.; Chen, P.

    2014-12-15

    BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

  17. Ergodic Relaxor State with High Energy Storage Performance Induced by Doping Sr0.85Bi0.1TiO3 in Bi0.5Na0.5TiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Li, Qing-Ning; Zhou, Chong-Rong; Xu, Ji-Wen; Yang, Ling; Zhang, Xin; Zeng, Wei-Dong; Yuan, Chang-Lai; Chen, Guo-Hua; Rao, Guang-Hui

    2016-10-01

    The large maximum polarization P max and low remnant polarization P r in relaxor ferroelectrics are key features for the energy storage density ( W) and energy-storage efficiency ( η) in materials selection. In this study, the ergodic relaxor (ER) state with high energy storage performance associated with low P r and large P max, induced by Sr0.85Bi0.1TiO3(SBT) addition in (1 - x)Bi0.5Na0.5TiO3- xSr0.85Bi0.1TiO3 (BNT-SBT x with x = 0.25-0.45, Bi0.5Na0.5TiO3 abbreviated as BNT) ceramics has been observed. In particular, significantly increased energy storage density ( W = 1.5 J/cm3) and energy-storage efficiency ( η = 73%) are obtained for BNT-SBT ergodic relaxor ceramics. These results suggest a new means of designing lead-free energy-storage materials.

  18. Dissimilarity of polar displacements in barium and lead based relaxors

    NASA Astrophysics Data System (ADS)

    Phelan, D.; Millican, J. N.; Gehring, P. M.

    2010-08-01

    Powder neutron diffraction experiments were performed on the relaxor compound, Ba(Zn1/3Nb2/3)0.95Ti0.05O3, which was recently shown to have stronger frequency dependence in its permittivity than many Pb-based relaxors (PBR), such as PbMg1/3Nb2/3O3 [L. Khemakhem et al., J. Alloys Compd. 452, 451 (2008)]. Several notable differences in structural properties were observed in the present measurements compared to PBR. In particular, much smaller atomic displacement parameters were found, especially on the A (Ba) site, which indicates that the local shifts of the Ba atoms are much smaller than the Pb shifts in PBR. Moreover, no signature of electrostrictive strain is apparent in the thermal expansion, and instead the thermal expansion is much larger at low temperatures than for PBR.

  19. Non-resonant electromechanical energy harvesting using inter-ferroelectric phase transitions

    SciTech Connect

    Pérez Moyet, Richard; Rossetti, George A.; Stace, Joseph; Amin, Ahmed; Finkel, Peter

    2015-10-26

    Non-resonant electromechanical energy harvesting is demonstrated under low frequency excitation (<50 Hz) using [110]{sub C}-poled lead indium niobate-lead magnesium niobate-lead titanate relaxor ferroelectric single crystals with compositions near the morphotropic phase boundary. The efficiency of power generation at the stress-induced phase transition between domain-engineered rhombohedral and orthorhombic ferroelectric states is as much as four times greater than is obtained in the linear piezoelectric regime under identical measurement conditions but during loading below the coercive stress of the phase change. The phase transition mode of electromechanical transduction holds potential for non-resonant energy harvesting from low-frequency vibrations and does not require mechanical frequency up-conversion.

  20. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays

    PubMed Central

    Lu, S. G.; Chen, X.; Levard, T.; Diglio, P. J.; Gorny, L. J.; Rahn, C. D.; Zhang, Q. M.

    2015-01-01

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly. PMID:26079628

  1. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays

    NASA Astrophysics Data System (ADS)

    Lu, S. G.; Chen, X.; Levard, T.; Diglio, P. J.; Gorny, L. J.; Rahn, C. D.; Zhang, Q. M.

    2015-06-01

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly.

  2. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays.

    PubMed

    Lu, S G; Chen, X; Levard, T; Diglio, P J; Gorny, L J; Rahn, C D; Zhang, Q M

    2015-06-16

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly.

  3. Poling and Depoling Effects on Dielectric Properties and Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 near a Morphotropic Phase Boundary Composition

    NASA Astrophysics Data System (ADS)

    Hidayah, Nur; Yasuda, Naohiko; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Iwata, Makoto

    2012-09-01

    The temperature dependence of the complex relative permittivity in a relaxor ferroelectric solid solution 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 (PIN-PMN-PT) crystal poled and depoled was measured from room temperature to 200 °C at various frequencies. The poled sample exhibits transitions from the ferroelectric (FE) phase to the relaxor (RE) phase on heating, and after that, the depoled one exhibits those from the RE phase to the glassy freezing phase on cooling. An RE-type dielectric dispersion with a weak frequency (f) dependence was observed. Such a dielectric dispersion in the RE state was found to be based on tweed domain structures observed by polarization light microscopy (PLM) and piezoelectric force microscopy (PFM) due to the competition between the antiferroelectric (AFE) and FE coupling in the RE state. The temperature dependence of complex permittivity with resonance- and relaxor-type dielectric dispersions in the poled and depoled samples was characterized by hierarchical domain structures.

  4. From spin induced ferroelectricity to dipolar glasses: Spinel chromites and mixed delafossites

    SciTech Connect

    Maignan, A.

    2012-11-15

    Magnetoelectric multiferroics showing coupling between polarization and magnetic order are attracting much attention. For instance, they could be used in memory devices. Metal-transition oxides are provided several examples of inorganic magnetoelectric multiferroics. In the present short review, spinel and delafossite chromites are described. For the former, an electric polarization is evidenced in the ferrimagnetic state for ACr{sub 2}O{sub 4} polycrystalline samples (A=Ni, Fe, Co). The presence of a Jahn-Teller cation such as Ni{sup 2+} at the A site is shown to yield larger polarization values. In the delafossites, substitution by V{sup 3+} at the Cr or Fe site in CuCrO{sub 2} (CuFeO{sub 2}) suppresses the complex antiferromagnetic structure at the benefit of a spin glass state. The presence of cation disorder, probed by transmission electron microscopy, favors relaxor-like ferroelectricity. The results on the ferroelectricity of ferrimagnets and insulating spin glasses demonstrate that, in this research field, transition-metal oxides are worth to be studied. - Graphical abstract: Electric polarization as a function of temperature is measured up to T{sub C} in three chromite ferrimagnetic spinels. Largest values are reached for spinels with Jahn-Teller cations at the A site (Ni or Fe). Highlights: Black-Right-Pointing-Pointer Electric polarization is evidenced in the ferrimagnetic state of the chromite spinels. Black-Right-Pointing-Pointer Jahn-Teller cations at the A site of these spinels lead to larger polarization values. Black-Right-Pointing-Pointer Vanadium substituted at the Cr (or Fe) site of delafossites changes the antiferromagnetic state to spin glass. Black-Right-Pointing-Pointer Electric polarization is not the result of magnetic ordering but magnetic disordering in Cr or Fe delafossites. Black-Right-Pointing-Pointer Relaxor-type ferroelectricity or spin induced ferroelectricity can be observed in the delafossites.

  5. Flexible ferroelectric organic crystals

    NASA Astrophysics Data System (ADS)

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity--the properties that originate from their non-centrosymmetric crystal lattice--but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  6. Flexible ferroelectric organic crystals

    PubMed Central

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-01-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity—the properties that originate from their non-centrosymmetric crystal lattice—but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals. PMID:27734829

  7. Investigation of diffuse phase transition in ferroelectric Pb2- x K1+ x Li x Nb5O15 (0 ≤ x ≤ 1.5) ceramics

    NASA Astrophysics Data System (ADS)

    Choukri, E.; Neqali, A.; Abkhar, Z.; Alimoussa, A.; Hajji, L.; Mezzane, D.; Belboukhari, A.; Amjoud, M.; Gagou, Y.; El Marssi, M.; Luk'yanchuk, I.

    2016-06-01

    Substitution of Pb with Li and K in the Pb2KNb5O15 phases leads to a new composition with chemical composition Pb2- x K1+ x Li x Nb5O15 which crystallizes with tetragonal tungsten bronze-type structure. Ferroelectric ceramics with different compositions were synthesized using solid-state reaction and complex dielectric permittivity measurements in these compounds were performed in a frequency and temperature range of 20 Hz-1 MHz and from 25 to 550 °C, respectively. Special attention was paid to the diffuse phase transition (DPT) that occurs close to the Curie temperature. The empirical equation proposed by Santos-Eiras for a phenomenological description of the temperature dependence of the dielectric permittivity (\\varepsilon_{{r}}^' }}) peak is used to calculate some characteristic parameters of DPT. From the results, it must be assumed that these compounds show a diffuse phase transition with non-relaxor behavior. A basic phase diagram showing the evolution of T m function of composition x is deduced from this study.

  8. Dielectric and Ferroelectric Properties of Lead Lanthanum Zirconate Titanate Thin Films for Capacitive Energy Storage

    NASA Astrophysics Data System (ADS)

    Tong, Sheng

    As the increasing requirement of alternative energy with less pollution influence and higher energy efficient, new energy source and related storage methods are hot topic nowadays. Capacitors that supply high instant power are one of the keys in this application for both economic and functional design aspects. To lower the cost and increases the volumetric efficiency and reliability, relaxor thin films are considered as one of the candidates of the next generation capacitors. The research mainly focuses on dielectric and ferroelectric properties of lead lanthanum zirconate titanate or Pb1-xLax(ZryTi1-y)O3 (PLZT, x/y/1-y) relaxor thin films deposited on silicon (Si) and nickel (Ni) substrates in a range of thickness with different bottom electrodes, e.g. Platinum (Pt) and LaNiO3 (LNO). The final fabricated PLZT film capacitors will show strong potential for the energy storage application. The method adopted is the acetic acid assisted sol-gel deposition for the PLZT thin films. The wet chemical process is cost-effective and easily to scale up for plant/industrial products. We investigated the different bottom electrode/substrate influence in structure, microstructure, phases/defects, and heat-treatment conditions to achieve the optimized PLZT thin films. Issues of basic physical size effects in the PLZT thin films were also investigated, including thickness effects in the dielectric and ferroelectric properties of the films in a wide range of temperatures, the phase transition of the thin-film relaxors, lanthanum content effect, electrode-dielectric junction, misfit strain effect, etc. Based on the results and analysis, optimum PLZT film capacitors can be determined of proper substrate/electrode/dielectric that achieves the desired dielectric properties required for different applications, especially a more cost-effective method to develop volumetrically efficient capacitors with high charge density, energy density, dielectric breakdown strength, energy storage

  9. Ferroelectric switching of elastin

    PubMed Central

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  10. Mechanically-induced resistive switching in ferroelectric tunnel junctions.

    PubMed

    Lu, H; Kim, D J; Bark, C-W; Ryu, S; Eom, C B; Tsymbal, E Y; Gruverman, A

    2012-12-12

    Recent advances in atomic-precision processing of oxide ferroelectrics-materials with a stable polarization that can be switched by an external electric field-have generated considerable interest due to rich physics associated with their fundamental properties and high potential for application in devices with enhanced functionality. One of the particularly promising phenomena is the tunneling electroresistance (TER) effect-polarization-dependent bistable resistance behavior of ferroelectric tunnel junctions (FTJ). Conventionally, the application of an electric field above the coercive field of the ferroelectric barrier is required to observe this phenomenon. Here, we report a mechanically induced TER effect in ultrathin ferroelectric films of BaTiO(3) facilitated by a large strain gradient induced by a tip of a scanning probe microscope (SPM). The obtained results represent a new paradigm for voltage-free control of electronic properties of nanoscale ferroelectrics and, more generally, complex oxide materials. PMID:23181389

  11. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  12. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics. PMID:26487348

  13. The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

  14. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  15. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor–ferroelectric ceramic composites

    DOE PAGESBeta

    Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; Okatan, B.; Jesse, S.; Kalinin, S. V.; Groh, C.; Rödel, J.; Lupascu, D. C.

    2016-01-05

    Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. However, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. Here,more » we report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. These results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.« less

  16. Semiconductor/relaxor 0-3 type composites without thermal depolarization in Bi₀.₅Na₀.₅TiO₃-based lead-free piezoceramics.

    PubMed

    Zhang, Ji; Pan, Zhao; Guo, Fei-Fei; Liu, Wen-Chao; Ning, Huanpo; Chen, Y B; Lu, Ming-Hui; Yang, Bin; Chen, Jun; Zhang, Shan-Tao; Xing, Xianran; Rödel, Jürgen; Cao, Wenwu; Chen, Yan-Feng

    2015-03-19

    Commercial lead-based piezoelectric materials raised worldwide environmental concerns in the past decade. Bi₀.₅Na₀.₅TiO₃-based solid solution is among the most promising lead-free piezoelectric candidates; however, depolarization of these solid solutions is a longstanding obstacle for their practical applications. Here we use a strategy to defer the thermal depolarization, even render depolarization-free Bi₀.₅Na₀.₅TiO₃-based 0-3-type composites. This is achieved by introducing semiconducting ZnO particles into the relaxor ferroelectric 0.94Bi₀.₅Na₀.₅TiO₃-0.06BaTiO₃ matrix. The depolarization temperature increases with increasing ZnO concentration until depolarization disappears at 30 mol% ZnO. The semiconducting nature of ZnO provides charges to partially compensate the ferroelectric depolarization field. These results not only pave the way for applications of Bi₀.₅Na₀.₅TiO₃-based piezoceramics, but also have great impact on the understanding of the mechanism of depolarization so as to provide a new design to optimize the performance of lead-free piezoelectrics.

  17. Flexoelectricity in Nanoscale Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Catalan, Gustau

    2012-02-01

    All ferroelectrics are piezoelectric and thus have an intrinsic coupling between polarization and strain. There exists an additional electromechanical coupling, however, between polarization and strain gradients. Strain gradients are intrinsically vectorial fields and, therefore, they can in principle be used to modify both the orientation and the sign of the polarization, thanks to the coupling known as flexoelectricity. Flexoelectricity is possible even in paraelectric materials, but is generally stronger in ferroelectrics on account of their high permittivity (the flexoelectric coefficient is proportional to the dielectric constant). Moreover, strain gradients can be large at the nanoscale due to the smallness of the relaxation length and, accordingly, strong flexoelectric effects can be expected in nanoscale ferroelectrics. In this talk we will present two recent results that highlight the above features. In the first part, I will show how polarization tilting can be achieved in a nominally tetragonal ferroelectric (PbTiO3) thanks to the internal flexoelectric fields generated in nano-twinned epitaxial thin films. Flexoelectricity thus offers a purely physical means of achieving rotated polarizations, which are thought to be useful for enhanced piezoelectricity. In the second part, we will show how the large strain gradients generated by pushing the sharp tip of an atomic force microscope against the surface of a thin ferroelectric film can be used to actively switch its polarity by 180^o. This enables a new concept for ``multiferroic'' memory operation in which the memory bits are written mechanically and read electrically.

  18. Study of the structure and ferroelectric behavior of BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} ceramics

    SciTech Connect

    Khokhar, Anita Sreenivas, K.; Goyal, Parveen K.; Thakur, O. P.

    2015-06-24

    The structure and ferroelectric properties of Lanthanum substituted barium bismuth titanate BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} (0 ≤ x ≤ 0.5) ceramics prepared by solid-state reaction method have been investigated. X-ray diffraction (XRD) confirms the formation of a single phase material. The distribution of lanthanum into the perovskite layers and (Bi{sub 2}O{sub 2}){sup 2+} layers of BaBi{sub 4}Ti{sub 4}O{sub 15} ceramics have been revealed through Raman spectroscopy. At lower value of x, it is seen that La{sup 3+} ions prefer to substitute A-site Bi{sup 3+} ions in the perovskite layers while for higher x values, La{sup 3+} ions get incorporated into the (Bi{sub 2}O{sub 2}){sup 2+} layers. A critical La content of x ∼ 0.2 in BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} is seen to exhibit a large remnant polarization (P{sub r}) with low coercive field (E{sub c}). The improvement in the ferroelectric properties of La substituted BaBi{sub 4}Ti{sub 4}O{sub 15} ceramics has been explained in terms of changing oxygen vacancy concentration and structural relaxation. Tunable ferroelectric materials can be obtained by manipulating the doping amount of lanthanum ion.

  19. Giant Electroresistive Ferroelectric Diode on 2DEG.

    PubMed

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-05-27

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr(0.2)Ti(0.8))O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I- ratio (>10(8) at ± 6 V) and I(on)/I(off) ratio (>10(7)). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics.

  20. Polarization fatigue of organic ferroelectric capacitors

    PubMed Central

    Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W. M.; de Leeuw, Dago M.

    2014-01-01

    The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 108 times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts. PMID:24861542

  1. Giant Electroresistive Ferroelectric Diode on 2DEG

    PubMed Central

    Kim, Shin-Ik; Jin Gwon, Hyo; Kim, Dai-Hong; Keun Kim, Seong; Choi, Ji-Won; Yoon, Seok-Jin; Jung Chang, Hye; Kang, Chong-Yun; Kwon, Beomjin; Bark, Chung-Wung; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub

    2015-01-01

    Manipulation of electrons in a solid through transmitting, storing, and switching is the fundamental basis for the microelectronic devices. Recently, the electroresistance effect in the ferroelectric capacitors has provided a novel way to modulate the electron transport by polarization reversal. Here, we demonstrate a giant electroresistive ferroelectric diode integrating a ferroelectric capacitor into two-dimensional electron gas (2DEG) at oxide interface. As a model system, we fabricate an epitaxial Au/Pb(Zr0.2Ti0.8)O3/LaAlO3/SrTiO3 heterostructure, where 2DEG is formed at LaAlO3/SrTiO3 interface. This device functions as a two-terminal, non-volatile memory of 1 diode-1 resistor with a large I+/I− ratio (>108 at ±6 V) and Ion/Ioff ratio (>107). This is attributed to not only Schottky barrier modulation at metal/ferroelectric interface by polarization reversal but also the field-effect metal-insulator transition of 2DEG. Moreover, using this heterostructure, we can demonstrate a memristive behavior for an artificial synapse memory, where the resistance can be continuously tuned by partial polarization switching, and the electrons are only unidirectionally transmitted. Beyond non-volatile memory and logic devices, our results will provide new opportunities to emerging electronic devices such as multifunctional nanoelectronics and neuromorphic electronics. PMID:26014446

  2. Polarization fatigue of organic ferroelectric capacitors.

    PubMed

    Zhao, Dong; Katsouras, Ilias; Li, Mengyuan; Asadi, Kamal; Tsurumi, Junto; Glasser, Gunnar; Takeya, Jun; Blom, Paul W M; de Leeuw, Dago M

    2014-05-27

    The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the driving waveform. We show that the fatigue is due to delamination of the top electrode. The origin is accumulation of gases, expelled from the capacitor, under the impermeable top electrode. The gases are formed by electron-induced phase decomposition of P(VDF-TrFE), similar as reported for inorganic ferroelectric materials. When the gas barrier is removed and the waveform is adapted, a fatigue-free ferroelectric capacitor based on P(VDF-TrFE) is realized. The capacitor can be cycled for more than 10(8) times, approaching the programming cycle endurance of its inorganic ferroelectric counterparts.

  3. Nanostructured ferroelectrics: fabrication and structure-property relations.

    PubMed

    Han, Hee; Kim, Yunseok; Alexe, Marin; Hesse, Dietrich; Lee, Woo

    2011-10-25

    With the continued demand for ultrahigh density ferroelectric data storage applications, it is becoming increasingly important to scale the dimension of ferroelectrics down to the nanometer-scale region and to thoroughly understand the effects of miniaturization on the materials properties. Upon reduction of the physical dimension of the material, the change in physical properties associated with size reduction becomes extremely difficult to characterize and to understand because of a complicated interplay between structures, surface properties, strain effects from substrates, domain nucleation, and wall motions. In this Review, the recent progress in fabrication and structure-property relations of nanostructured ferroelectric oxides is summarized. Various fabrication approaches are reviewed, with special emphasis on a newly developed stencil-based method for fabricating ferroelectric nanocapacitors, and advantages and limitations of the processes are discussed. Stress-induced evolutions of domain structures upon reduction of the dimension of the material and their implications on the electrical properties are discussed in detail. Distinct domain nucleation, growth, and propagation behaviors in nanometer-scale ferroelectric capacitors are discussed and compared to those of micrometer-scale counterparts. The structural effect of ferroelectric nanocapacitors on the domain switching behavior and cross-talk between neighboring capacitors under external electric field is reviewed. PMID:21919083

  4. Time-Resolved, Electric-Field-Induced Domain Switching and Strain in Ferroelectric Ceramics and Crystals

    NASA Astrophysics Data System (ADS)

    Jones, Jacob L.; Nino, Juan C.; Pramanick, Abhijit; Daniels, John E.

    Ferroelectric materials are used in a variety of applications including diagnostic and therapeutic ultrasound, sonar, vibration and displacement sensors, and non-volatile random access memory. The electromechanical response in ferroelectric materials is comprised of both intrinsic (piezoelectric lattice strain) and extrinsic (e.g., domain wall motion) components that are expressed as characteristic changes in the diffraction pattern. By applying slow, step-wise changes in the electric field, prior quasi-dynamic diffraction measurements have demonstrated both lattice strains and non-180 ∘ domain switching at fields exceeding the macroscopically defined coercive field. However, the loading conditions which most replicate real device operation involve dynamic actuation with sub-coercive, cyclic electric fields. At these operating conditions, extrinsic irreversibilities lead to hysteresis, frequency dispersion and nonlinearity of macroscopic properties. Observation of strain and domain switching at these cyclic loading conditions is an area in which we have reported recent advances using stroboscopic techniques. This chapter highlights the electric-field-induced lattice strain and kinetics of domain switching in a number of materials including technologically-relevant lead zirconate titanate (PZT) ceramics and relaxor single crystals. An outlook on the continuing use of time-resolved diffraction techniques in the characterization of ferroelectric materials is also discussed.

  5. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    DOEpatents

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  6. Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration

    SciTech Connect

    Yang, Fang; Zhang, Qinghua; Yang, Zhenzhong; Gu, Junxing; Liang, Yan; Li, Wentao; Wang, Weihua; Jin, Kuijuan; Gu, Lin; Guo, Jiandong

    2015-08-24

    The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.

  7. Depolarization field effect on dielectric and piezoelectric properties of particulate ferroelectric ceramic-polymer composites

    NASA Astrophysics Data System (ADS)

    Ma, Fengde D.; Wang, Yu U.

    2015-03-01

    The effects of depolarization field on the dielectric and piezoelectric properties of ferroelectric ceramic particle-filled polymer-matrix composites are investigated at the underlying domain level. Phase field modeling and simulation reveals that the macroscopic properties of the composites are dominated by depolarization field effect, which depends on the arrangement and alignment rather than the size or internal grain structure of the ferroelectric particulates. It is found that 0-3 particulate composites with random dispersion of ferroelectric particles behave essentially like linear dielectric rather than ferroelectric materials, and domain-level analysis reveals the physical mechanism for lack of domain switching or hysteresis as attributed to strong depolarization effect. Thus, without effective reduction or elimination of the depolarization field, the composites cannot benefit from the functional fillers regardless of their superior properties. In order to exhibit the desired ferroelectric behaviors, it necessitates continuous ferroelectric phase connectivity in the composites.

  8. Ferroelectric studies of excessive Sm3+ containing perovskite PZT and pyrochlore biphase ceramics

    NASA Astrophysics Data System (ADS)

    Babu, T. Anil; Ramesh, K. V.; Reddy, V. Raghavendra; Sastry, D. L.

    2014-04-01

    Polycrystalline samples of Sm3+ modified Pb1-x Sm2x/3 (Zr0.6Ti0.4) O3 (PSZT) ceramics (where x = 0.1, 0.2, 0.3, 0.4) have been prepared by a high energy ball milling technique, followed by calcination at 950°C and sintering at 1150°C. As x is increased more than 0.1 mole%, considerable secondary phase has been formed. This phase has been identified as pyrochlore Sm2Ti2O7 from its X-ray diffraction (XRD) peaks. The XRD studies also indicate that the perovskte phases of the present systems undergo a dopant induced phase transformation from rhombohedral to tetragonal strucure. All the samples exhibit diffuse but non-relaxor type ferroelectric phase transition. The results of dielectric and hysteresis studies of these materials are presented.

  9. Molecular ferroelectrics: where electronics meet biology

    PubMed Central

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-01-01

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by overview on the fundamentals of ferroelectricity. Latest development in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also noted. PMID:24018952

  10. Molecular ferroelectrics: where electronics meet biology.

    PubMed

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  11. Eutectic mixtures of ferroelectric liquid crystals

    SciTech Connect

    Goodby, J.W. ); Chin, E. ); Patel, J.S. )

    1989-11-30

    Ferroelectric liquid crystals show potential as the optically and electrically active media in a variety of applications. However, it is considered unlikely that a single individual compound will possess all of the desired properties required by device applications, and therefore it is to be expected that it will be necessary to mix compounds together in order to obtain a suitable blend. In this study we have examined how the pitch of the helix and the magnitude of the spontaneous polarization of the ferroelectric smectic C* phase vary as a function of concentration when two materials of opposite twist and with the same (or opposite) polarization directions are mixed together. In some cases the ferroelectric phase(s) was found to disappear in the central region of the phase diagram, only to be replaced by the nonferroelectric smectic B phase. This type of behavior was found to happen even when the two components were of the same generic family. Changes in phase type were detected optically and also from the switching behavior in individual mixtures. This second approach offers a new method of monitoring certain phase changes that occur in a phase diagram.

  12. Magnetocaloric effect in ferroelectric Ising chain magnet

    NASA Astrophysics Data System (ADS)

    Qi, Yan; Liu, Jia; Yu, Nai-sen; Du, An

    2016-05-01

    We investigate the magnetocaloric effect (MCE) in multiferroic chain system by adopting the elastic Ising-chain model. Based on the transfer-matrix method, the magnetothermal quantities of characterizing MCE behaviors including the entropy, entropy change and adiabatic cooling rate are rigorously determined. Combined with analysis of ground-state, we mainly discuss results in an antiferromagnetic regime associated with ferroelectric transition. Our results show that the entropy change is greatly enhanced near the saturation field as frustration parameter varies in this regime, and accompanied with remarkable inverse MCE, indicating the enormous potential of multiferroic system in low-temperature refrigeration. Meanwhile we also observe a prominent temperature variation in the isoentropy curves close to zero-temperature ferroelectric transition, but this enhancing MCE signal is very sensitive to the thermal fluctuations, and can be strongly suppressed even under a small temperature.

  13. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  14. Study of physical properties of integrated ferroelectric/ferromagnetic heterostructures

    SciTech Connect

    Martinez, R.; Kumar, A.; Palai, R.; Katiyar, R. S.; Scott, J. F.

    2010-06-15

    Superlattices (SLs) with different periodicity of ferromagnetic La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} as constitutive layers were fabricated on conducting LaNiO{sub 3} coated (001) oriented MgO substrates using pulsed laser deposition. The crystallinity, ferroelectric, and magnetic properties of the SLs were studied over a wide range of temperatures and frequencies. The structure exhibited ferromagnetic behavior at 300 K and ferroelectric behavior over a range of temperatures between 100 and 300 K. A frequency-dependent change in dielectric constant and tangent loss were observed above the ferromagnetic-paramagnetic temperature. The frequency-dependent dielectric anomalies are attributed to the change in metallic and magnetic nature of LSMO and also the interfacial effect of two different phases that are connected alternatively in series. The effect of ferromagnetic LSMO layers on ferroelectric properties of the SLs indicated strong influence of the interfaces. The asymmetric behavior of ferroelectric loop and the capacitance-voltage relationship suggest development of a built field in the SLs due to high strain across the interfaces.

  15. Properties of Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Ponomareva, Inna

    2008-03-01

    Ferroelectric nanostructures (FENs) such as thin films, nanowires and nanodots are receiving a lot of attention due to their potential for technological applications and to the rich variety of underlying physics. Interestingly, properties of FENs can substantially deviate from their bulk counterpart due to their sensitivity to many factors. Examples of such factors are the electrical boundary conditions (associated with the full, partial or non-existent screening of polarization-induced surface charges) and mechanical boundary conditions (arising from the lattice mismatch between the FEN and its substrate). Here, we developed and used computational schemes to predict many properties in various FENs, as well as, to provide atomistic insight to their complex phenomena. In particular, we will show the striking following features and reveal their origins: *The interplay between electrical boundary conditions, mechanical boundary conditions and growth direction results in the appearance of novel dipole patterns and new low-symmetry phases possessing superior dielectric properties in ferroelectric dots, wires and films [1,2]. *FENs can exhibit dielectric anomalies, such as a negative dielectric susceptibility [3]. *Nanobubbles can form in ferroelectric films under an external electric field [4]. *An homogeneous electric field can be used to control the chirality of vortex structures in asymmetric ferroelectric dots, via the creation of original intermediate states [5]. [1] I. Ponomareva et al., Phys. Rev. B 72, 214118 (2005). [2] I. Ponomareva and L. Bellaiche, Phys. Rev. B 74, 064102 (2006). [3] I. Ponomareva et al., to be published in Phys. Rev. Lett. (2007). [4] B.-K. Lai et al., Phys. Rev. Lett. 96, 137602 (2006). [5] S. Prosandeev et al., submitted (2007). These works have been done in collaboration with L. Bellaiche, I. Kornev, B.-K. Lai, I.I. Naumov, R. Resta and S. Prosandeev. Some computations were made possible thanks to the MRI Grants 0421099 and 0722625 from

  16. Electric field induced metastable ferroelectric phase and its behavior in (Pb, La)(Zr, Sn, Ti)O{sub 3} antiferroelectric single crystal near morphotropic phase boundary

    SciTech Connect

    Li, Yuanyuan; Li, Qiang Yan, Qingfeng; Gao, Jinghan; Zhuo, Fangping; Cao, Wenwu; Xi, Xiaoqing; Zhang, Yiling; Chu, Xiangcheng

    2014-02-03

    Antiferroelectric (AFE) (Pb, La)(Zr, Sn, Ti)O{sub 3} (PLZST) single crystal with composition near morphotropic phase boundary has been grown and studied. X-ray diffraction analysis and electrical properties reveal coexistence of antiferroelectric/ferroelectric (FE) phases, with the AFE phase dominated at room temperature. Temperature-dependent polarization and strain measurements indicate that the AFE phase can be induced into a metastable FE phase by electric field. The FE phase can be maintained in a wide temperature range above room temperature and recovers to AFE phase around a critical temperature of 90 °C, accompanied with remarkable change in field-induced strain. The strain at 90 °C (∼0.50%) is ten times larger than that at room temperature (∼0.04%), which makes the PLZST single crystal a promising candidate for thermal switch and actuator application.

  17. Electric field induced metastable ferroelectric phase and its behavior in (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric single crystal near morphotropic phase boundary

    NASA Astrophysics Data System (ADS)

    Li, Yuanyuan; Cao, Wenwu; Li, Qiang; Yan, Qingfeng; Gao, Jinghan; Zhuo, Fangping; Xi, Xiaoqing; Zhang, Yiling; Chu, Xiangcheng

    2014-02-01

    Antiferroelectric (AFE) (Pb, La)(Zr, Sn, Ti)O3 (PLZST) single crystal with composition near morphotropic phase boundary has been grown and studied. X-ray diffraction analysis and electrical properties reveal coexistence of antiferroelectric/ferroelectric (FE) phases, with the AFE phase dominated at room temperature. Temperature-dependent polarization and strain measurements indicate that the AFE phase can be induced into a metastable FE phase by electric field. The FE phase can be maintained in a wide temperature range above room temperature and recovers to AFE phase around a critical temperature of 90 °C, accompanied with remarkable change in field-induced strain. The strain at 90 °C (˜0.50%) is ten times larger than that at room temperature (˜0.04%), which makes the PLZST single crystal a promising candidate for thermal switch and actuator application.

  18. Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

    SciTech Connect

    Zhang, Qiming

    2015-06-24

    Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlled nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G0+ ½ a P2 +1/4 b P4 + 1/6 c P6 – EP, and a = ß (T-Tc), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very

  19. Phase Transition Behaviors in [011]-Oriented Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals Studied by Dielectric and Micro-Brillouin Spectroscopies

    NASA Astrophysics Data System (ADS)

    Kim, Tae Hyun; Ko, Jae-Hyeon; Kojima, Seiji

    2013-09-01

    Phase transition behaviors of unpoled and [011]-poled relaxor ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals were investigated over a wide temperature range by dielectric and Brillouin scattering spectroscopies. The [011]-poled crystal exhibited two discontinuous dielectric and acoustic anomalies at ˜119 and ˜126 °C, which were attributed to two poling-induced structural phase transitions from rhombohedral to orthorhombic, and then to tetragonal symmetry. However, this poled crystal maintained the diffused phase transition behaviors of the unpoled one at higher temperatures above ˜126 °C. The disappearance of the poling effect upon the diffuse phase transition near the TC suggests that the macroscopic ferroelectric domains formed by poling are decomposed into mesoscopic and nano size polar regions at ˜126 °C. These polarization fluctuations and the coupling of these dynamic polar regions to the acoustic waves play the dominant role in the dielectric and acoustic anomalies, respectively. Therefore, a diffusive nature was commonly observed in both unpoled and poled single crystals near TC.

  20. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    SciTech Connect

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Mitoseriu, Liliana; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen

    2013-02-21

    Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  1. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    NASA Astrophysics Data System (ADS)

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen; Mitoseriu, Liliana

    2013-02-01

    Particulate composites of ferrite and ferroelectric phases with xNiFe2O4 (NF) and (1 - x)Pb0.988(Zr0.52Ti0.48)0.976Nb0.024O3 (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 °C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  2. Conduction at a ferroelectric interface

    SciTech Connect

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

  3. Conduction at a ferroelectric interface

    DOE PAGESBeta

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

  4. SOFT MODE ANOMALIES IN THE PEROVSKITE RELAXOR Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}

    SciTech Connect

    GEHRING,P.M.; VAKRUSHEV,S.B.; SHIRANE,G.

    2000-03-09

    Neutron inelastic scattering measurements of the polar TO phonon mode in the cubic relaxor Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, at room temperature, reveal anomalous behavior similar to that recently observed in Pb(Zn{sub 1/3}Nb{sub 2/3}){sub 0.92}Ti{sub 0.08}O{sub 3} in which the optic branch appears to drop precipitously into the acoustic branch at a finite value of the momentum transfer q = 0.2 {angstrom}{sub {minus}1}, measured from the zone center. By contrast, a recent neutron study indicates that PMN exhibits a normal TO phonon dispersion at 800 K. The authors speculate this behavior is common to all relaxor materials, and is the result of the presence of nanometer-scale polarized domains in the crystal that form below a temperature T{sub d}, which effectively prevent the propagation of long wavelength (q = 0) phonons.

  5. Morphotropic domain structures and dielectric relaxation in piezo-/ferroelectric Pb(In1/2Nb1/2)O3-Pb(Zn1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Li, Tao; Chen, Chang; Ye, Mao; Qiu, Ximei; Lin, Peng; Xiong, Xinbo; Zeng, Xierong; Huang, Haitao; Ke, Shanming

    2016-05-01

    The domain structures, phase transitions and dielectric relaxation of relaxor-based piezo-/ferroelectric (1-x)Pb(In1/2Nb1/2)O3-0.33Pb(Zn1/3Nb2/3)O3-xPbTiO3 (x=0.30, 0.34, 0.37, and 0.42) single crystals, abbreviated as PIN-PZN-PT, grown by flux method, have been analyzed by polarized light microscope and dielectric spectroscopy. The dielectric relaxation was described by the Curie-Weiss law and Lorentz-type quadratic equation. The substitution of Ti4+ ions for the B-site complex (Zn1/3Nb2/3)4+ and (In1/2Nb1/2)4+ ions results in a long-range symmetry breaking, as revealed by the formation of birefringent domains. Single crystal of PIN-PZN-PT with morphotropic compositions exhibit complex domain structures, which are composed of both rhombohedral and tetragonal phases intimately mixed together. The domain structures, the sequence and temperature of phase transitions have been interpreted in relation to the morphotropic phase boundary behavior of the PIN-PZN-PT system. The analysis of morphotropic domain structures and phase transitions provides a better understanding of the microscopic mechanisms of the enhanced piezoelectric properties recently disclosed in the PIN-PZN-PT and other PZN-based piezocrystals.

  6. Ferroelectric optical image comparator

    DOEpatents

    Butler, Michael A.; Land, Cecil E.; Martin, Stephen J.; Pfeifer, Kent B.

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  7. Ferroelectric optical image comparator

    DOEpatents

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  8. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-10-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  9. Ferroelectric Based Technologies for Accelerators

    SciTech Connect

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Kazakov, S.; Tagantsev, A.; Yakovlev, V.

    2009-01-22

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used--its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  10. Ferroelectric Based Technologies for Accelerators

    NASA Astrophysics Data System (ADS)

    Kanareykin, A.; Nenasheva, E.; Kazakov, S.; Kozyrev, A.; Tagantsev, A.; Yakovlev, V.; Jing, C.

    2009-01-01

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used—its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  11. Ferroelectricity in corundum derivatives

    NASA Astrophysics Data System (ADS)

    Ye, Meng; Vanderbilt, David

    2016-04-01

    The search for new ferroelectric (FE) materials holds promise for broadening our understanding of FE mechanisms and extending the range of application of FE materials. Here we investigate a class of A B O3 and A2B B'O6 materials that can be derived from the X2O3 corundum structure by mixing two or three ordered cations on the X site. Most such corundum derivatives have a polar structure, but it is unclear whether the polarization is reversible, which is a requirement for a FE material. In this paper, we propose a method to study the FE reversal path of materials in the corundum derivative family. We first categorize the corundum derivatives into four classes and show that only two of these allow for the possibility of FE reversal. We then calculate the energy profile and energy barrier of the FE reversal path using first-principles density functional methods with a structural constraint. Furthermore, we identify several empirical measures that can provide a rule of thumb for estimating the energy barriers. Finally, the conditions under which the magnetic ordering is compatible with ferroelectricity are determined. These results lead us to predict several potentially new FE materials.

  12. Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper Doped ZnO

    SciTech Connect

    Herng, T.S.; Sanchez-Hanke, C.; Wong, M.F.; Qi, D.; Yi, J.; Kumar, A.; Huang, A.; Kartawidjaja, F.C.; Smadici, S.; Abbamonte, P.; Shannigraphi, S.; Xue, J.M.; Wang, J.; Feng, Y.P.; Rusydi, A.; Zeng, K.; Ding, J.

    2011-01-01

    A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias.

  13. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  14. Dynamic Properties of Dielectric Susceptibility in Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Cui, Lian; Cui, Haiying; Wu, Chunmei; Yang, Guihua; He, Zelong; Wang, Yuling; Che, Jixin

    2016-02-01

    In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

  15. Imaging linear polarimetry using a single ferroelectric liquid crystal modulator.

    PubMed

    Gendre, Luc; Foulonneau, Alban; Bigué, Laurent

    2010-09-01

    In the field of polarimetry, ferroelectric liquid crystal cells are mostly used as bistable polarization rotators suitable to analyze crossed polarizations. This paper shows that, provided such a cell is used at its nominal wavelength and correctly driven, its behavior is close to that of a tunable half-wave plate, and it can be used with much benefit in lightweight imaging polarimetric setups. A partial Stokes polarimeter using a single digital video camera and a single ferroelectric liquid crystal modulator is designed and implemented for linear polarization analysis. Polarization azimuthal angle and degree of linear polarization are available at 150 frames per second with a good accuracy. PMID:20820209

  16. Spectroscopic signature for ferroelectric ice

    NASA Astrophysics Data System (ADS)

    Wójcik, Marek J.; Gług, Maciej; Boczar, Marek; Boda, Łukasz

    2014-09-01

    Various forms of ice exist within our galaxy. Particularly intriguing type of ice - ‘ferroelectric ice' was discovered experimentally and is stable in temperatures below 72 K. This form of ice can generate enormous electric fields and can play an important role in planetary formation. In this letter we present Car-Parrinello simulation of infrared spectra of ferroelectric ice and compare them with spectra of hexagonal ice. Librational region of the spectra can be treated as spectroscopic signature of ice XI and can be of help to identify ferroelectric ice in the Universe.

  17. Field dependent elastic anomaly in uniaxial tungsten bronze relaxors

    NASA Astrophysics Data System (ADS)

    Aftabuzzaman, Md; Dec, Jan; Kleemann, Wolfgang; Kojima, Seiji

    2016-10-01

    The electric field effects on the elastic properties of uniaxial Ca x Ba1- x Nb2O6 (x = 0.30, CBN30) single crystals were investigated using broadband Brillouin scattering spectroscopy as functions of temperature and electric field. Remarkable thermal hysteresis was observed between zero field heating and zero field cooling processes. A stretching index β = 2.05 indicates the stretched critical slowing down of polar nanoregions (PNRs). The effect of electric field along [001] direction was clearly observed. Under 1.0 kV/cm field, the alignment of nanodomains and enhancement of the long-range ferroelectric order were observed in the ferroelectric phase. In the field dependent measurement, a mixed state consisting of macrodomains induced by the electric field and nanodomains caused by the random fields was observed at 3.0 kV/cm. The mixed state persists up to 13 kV/cm because of the incomplete switching of the nanodomains to the macrodomains state. A very strong memory effect was also observed.

  18. Broadband light-scattering spectroscopy on fractal and non-fractal relaxors

    NASA Astrophysics Data System (ADS)

    Koreeda, Akitoshi; Ogawa, Tomohiro; Katayama, Daisuke; Fujii, Yasuhiro; Tachibana, Makoto

    2016-10-01

    We show the quasi-elastic light scattering (QELS) spectra of two groups of relaxors: the first group includes relaxors that exhibit glasslike low-temperature thermal conductivity and heat capacity, namely, Pb(Mg1/3Nb2/3)O3 (PMN), (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT), Pb(Zr1/3Nb2/3)O3 (PZN), and (Na1/2Bi1/2)TiO3 (NBT). The other group consists of relaxors exhibiting a normal (crystal) temperature dependence of the thermal conductivity and heat capacity, namely, K1- x Li x TaO3 (KLT) and KTa1- x Nb x O3 (KTN). The crystals of the first group yielded self-similar (power-law) QELS spectra, indicating the existence of fractal networks/clusters of polar nanoregions, while those of the second group did not show any self-similarity in the QELS spectra. These results imply that the glasslike low-temperature thermal conductivity and heat capacity in relaxors can be attributed to the vibrational modes specific to fractal networks/clusters formed by polar nanoregions.

  19. Ferroelectricity in one unit-cell period oxide superlattices

    NASA Astrophysics Data System (ADS)

    Noh, T. W.; Lee, J. H.; Lee, H. N.

    2005-03-01

    We present electric properties of one unit-cell period superlattices composed of CaTiO3 (CTO), SrTiO3 (STO), and BaTiO3 (BTO) perovskites, in which the structural symmetry and lattice misfit strain can be systematically varied without changing the chemical valence states. The one unit-cell period CTO/BTO, BTO/STO, and CTO/STO superlattices were grown by high oxygen pressure pulsed laser deposition on atomically flat SrRuO3 conducting oxide grown on STO (001) substrates. CTO/BTO and BTO/STO showed ferroelectricity in room temperature, while CTO/STO showed paraelectric behavior. Such spontaneous electric polarization was an unexpected result, because all TiO6 octahedron was not in the same structural condition with ferroelectric BTO, but was sandwiched by CaO (SrO) and BaO layers in these superlattices. By performing first principle calculations, ferroelectric ground states can be found in the distorted TiO6. Moreover, the ferroelectricity was described as the collective displacement of the titanium-oxygen-titanium ions, which is different from that of bulk ferroelectric material.

  20. Piezoelectric properties of rhombohedral ferroelectric materials with phase transition

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaofang; Soh, A. K.

    2015-12-01

    The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau-Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.

  1. Ferroelectric domain structure of anisotropically strained NaNbO{sub 3} epitaxial thin films

    SciTech Connect

    Schwarzkopf, J. Braun, D.; Schmidbauer, M.; Duk, A.; Wördenweber, R.

    2014-05-28

    NaNbO{sub 3} thin films have been grown under anisotropic biaxial strain on several oxide substrates by liquid-delivery spin metalorganic chemical vapor deposition. Compressive lattice strain of different magnitude, induced by the deposition of NaNbO{sub 3} films with varying film thickness on NdGaO{sub 3} single crystalline substrates, leads to modifications of film orientation and phase symmetry, which are similar to the phase transitions in Pb-containing oxides near the morphotropic phase boundary. Piezoresponse force microscopy measurements exhibit large out-of-plane polarization components, but no distinctive domain structure, while C-V measurements indicate relaxor properties in these films. When tensile strain is provoked by the epitaxial growth on DyScO{sub 3}, TbScO{sub 3}, and GdScO{sub 3} single crystalline substrates, NaNbO{sub 3} films behave rather like a normal ferroelectric. The application of these rare-earth scandate substrates yields well-ordered ferroelectric stripe domains of the type a{sub 1}/a{sub 2} with coherent domain walls aligned along the [001] substrate direction as long as the films are fully strained. With increasing plastic lattice relaxation, initially, a 2D domain pattern with still exclusively in-plane electric polarization, and finally, domains with in-plane and out-of-plane polar components evolve.

  2. Semiconductor/relaxor 0-3 type composites without thermal depolarization in Bi0.5Na0.5TiO3-based lead-free piezoceramics

    NASA Astrophysics Data System (ADS)

    Zhang, Ji; Pan, Zhao; Guo, Fei-Fei; Liu, Wen-Chao; Ning, Huanpo; Chen, Y. B.; Lu, Ming-Hui; Yang, Bin; Chen, Jun; Zhang, Shan-Tao; Xing, Xianran; Rödel, Jürgen; Cao, Wenwu; Chen, Yan-Feng

    2015-03-01

    Commercial lead-based piezoelectric materials raised worldwide environmental concerns in the past decade. Bi0.5Na0.5TiO3-based solid solution is among the most promising lead-free piezoelectric candidates; however, depolarization of these solid solutions is a longstanding obstacle for their practical applications. Here we use a strategy to defer the thermal depolarization, even render depolarization-free Bi0.5Na0.5TiO3-based 0-3-type composites. This is achieved by introducing semiconducting ZnO particles into the relaxor ferroelectric 0.94Bi0.5Na0.5TiO3-0.06BaTiO3 matrix. The depolarization temperature increases with increasing ZnO concentration until depolarization disappears at 30 mol% ZnO. The semiconducting nature of ZnO provides charges to partially compensate the ferroelectric depolarization field. These results not only pave the way for applications of Bi0.5Na0.5TiO3-based piezoceramics, but also have great impact on the understanding of the mechanism of depolarization so as to provide a new design to optimize the performance of lead-free piezoelectrics.

  3. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  4. Tunnel electroresistance through organic ferroelectrics

    PubMed Central

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  5. Ferroelectric capacitor with reduced imprint

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  6. Tunnel electroresistance through organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-05-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

  7. Tunnel electroresistance through organic ferroelectrics.

    PubMed

    Tian, B B; Wang, J L; Fusil, S; Liu, Y; Zhao, X L; Sun, S; Shen, H; Lin, T; Sun, J L; Duan, C G; Bibes, M; Barthélémy, A; Dkhil, B; Garcia, V; Meng, X J; Chu, J H

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  8. Ferroelectric infrared detector and method

    DOEpatents

    Lashley, Jason Charles; Opeil, Cyril P.; Smith, James Lawrence

    2010-03-30

    An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a .lamda. shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

  9. Conductivity and interfacial charge induced phenomena in ferroelectric films and composites

    NASA Astrophysics Data System (ADS)

    Wong, Chung Kwan

    2005-11-01

    Ferroelectric materials are polar dielectrics which normally possess small but finite electrical conductivity. We believe that conductivity in ferroelectrics can induce new phenomena or modify known physical phenomena, which may be difficult to understand if the materials are regarded as perfectly insulating. In this thesis, some "anomalous" phenomena are investigated for which the origins are still under debate in literature, and we suggest that these may very well be manifestations of electrical conduction and electric charges. Ferroelectric systems of interest to this investigation include composites and films. Electrical conductivity in ferroelectric composites allows free charge to accumulate at the matrix-inclusion interfaces. We focus on the role of interfacial charge at such interfaces in ferroelectric 0--3 composites (normally, ferroelectric ceramic inclusions dispersed in polymer matrices) in the interpretation of their peculiar experimental results. The effect of interfacial charge on the piezoelectric properties of ferroelectric 0--3 composites and the effect of electrical conductivity on their dielectric and piezoelectric properties are also investigated. Our previously developed model has been extended to include the additional contribution from the deformation of the inclusion particles (for discussing the effect of interfacial charge) due to the applied stresses in piezoelectric measurements, and for discussing the effect of conductivity to include its contribution as well as the frequency of measurement. Phenomena induced by electrical conductivity in other ferroelectric systems have also been studied. We consider the effects of electrical conductivity on the dynamic polarization behavior of ferroelectric films. Using a parallelogram-like P-E hysteresis model for the film material, explicit expressions are obtained for describing the D-E loops of ferroelectric films as would be measured from a Sawyer-Tower circuit which originally assumes the

  10. Micro- and nanodomain imaging in uniaxial ferroelectrics: Joint application of optical, confocal Raman, and piezoelectric force microscopy

    SciTech Connect

    Shur, V. Ya. Zelenovskiy, P. S.

    2014-08-14

    The application of the most effective methods of the domain visualization in model uniaxial ferroelectrics of lithium niobate (LN) and lithium tantalate (LT) family, and relaxor strontium-barium niobate (SBN) have been reviewed in this paper. We have demonstrated the synergetic effect of joint usage of optical, confocal Raman, and piezoelectric force microscopies which provide extracting of the unique information about formation of the micro- and nanodomain structures. The methods have been applied for investigation of various types of domain structures with increasing complexity: (1) periodical domain structure in LN and LT, (2) nanodomain structures in LN, LT, and SBN, (3) nanodomain structures in LN with modified surface layer, (4) dendrite domain structure in LN. The self-assembled appearance of quasi-regular nanodomain structures in highly non-equilibrium switching conditions has been considered.

  11. Lead-free and lead-based ABO3 perovskite relaxors with mixed-valence A-site and B-site disorder: Comparative neutron scattering structural study of (Na1/2Bi1/2)TiO3 and Pb(Mg1/3Nb2/3)O3

    NASA Astrophysics Data System (ADS)

    Ge, Wenwei; Devreugd, Christopher P.; Phelan, D.; Zhang, Qinhui; Ahart, Muhtar; Li, Jiefang; Luo, Haosu; Boatner, Lynn A.; Viehland, Dwight; Gehring, Peter M.

    2013-11-01

    We report the results of neutron elastic-scattering measurements made between -250 °C and 620 °C on the lead-free relaxor (Na1/2Bi1/2)TiO3 (NBT). Strong, anisotropic, elastic diffuse scattering intensity decorates the (100), (110), (111), (200), (210), and (220) Bragg peaks at room temperature. The wave-vector dependence of this diffuse scattering is compared to that in the lead-based relaxor Pb(Mg1/3Nb2/3)O3 (PMN) to determine if any features might be common to relaxors. Prominent ridges in the elastic diffuse scattering intensity contours that extend along ⟨110⟩ are seen that exhibit the same zone dependence as those observed in PMN and other lead-based relaxors. These ridges disappear gradually on heating above the cubic-to-tetragonal phase transition temperature TCT = 523 °C, which is also near the temperature at which the dielectric permittivity begins to deviate from Curie-Weiss behavior. We thus identify the ⟨110⟩-oriented ridges as a relaxor-specific property. The diffuse scattering contours also display narrower ridges oriented along ⟨100⟩ that are consistent with the x-ray results of Kreisel [Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.68.014113 68, 014113 (2003)]; these vanish near 320 °C, indicating that they have a different physical origin. The ⟨100⟩-oriented ridges are not observed in PMN. We observe no equivalent relaxor-specific elastic diffuse scattering from the homovalent relaxor analogues K0.95Li0.05TiO3 (A-site disordered) and KTa0.95Nb0.05O3 (B-site disordered). This suggests that the ⟨110⟩-oriented diffuse scattering ridges are correlated with the presence of strong random electric fields and invites a reassessment of what defines the relaxor phase. We find that doping NBT with 5.6% BaTiO3, a composition close to the morphotropic phase boundary with enhanced piezoelectric properties, increases the room-temperature correlation length along [11¯0] from 40 to 60 Å while doubling the associated integrated diffuse

  12. BZT: A Soft Pseudospin Glass.

    PubMed

    Sherrington, David

    2013-11-27

    In an attempt to understand the origin of relaxor ferroelectricity, it is shown that interesting behavior of the onset of nonergodicity and of precursor nanodomains, found in first-principles simulations of the relaxor alloy Ba(Zr(1-x)Ti(x))O(3), can easily be understood within a simple mapping to a soft pseudospin glass.

  13. BZT: A Soft Pseudospin Glass

    NASA Astrophysics Data System (ADS)

    Sherrington, David

    2013-11-01

    In an attempt to understand the origin of relaxor ferroelectricity, it is shown that interesting behavior of the onset of nonergodicity and of precursor nanodomains, found in first-principles simulations of the relaxor alloy Ba(Zr1-xTix)O3, can easily be understood within a simple mapping to a soft pseudospin glass.

  14. Ferroelectric domain formation in discotic liquid crystals: Monte Carlo study on the influence of boundary conditions.

    PubMed

    Bose, Tushar Kanti; Saha, Jayashree

    2015-10-01

    The realization of a spontaneous macroscopic ferroelectric order in fluids of anisotropic mesogens is a topic of both fundamental and technological interest. Recently we demonstrated that a system of dipolar achiral disklike ellipsoids can exhibit long-searched ferroelectric liquid crystalline phases of dipolar origin. In the present work, extensive off-lattice Monte Carlo simulations are used to investigate the phase behavior of the system under the influences of the electrostatic boundary conditions that restrict any global polarization. We find that the system develops strongly ferroelectric slablike domains periodically arranged in an antiferroelectric fashion. Exploring the phase behavior at different dipole strengths, we find existence of the ferroelectric nematic and ferroelectric columnar order inside the domains. For higher dipole strengths, a biaxial phase is also obtained with a similar periodic array of ferroelectric slabs of antiparallel polarizations. We have studied the depolarizing effects by using both the Ewald summation and the spherical cutoff techniques. We present and compare the results of the two different approaches of considering the depolarizing effects in this anisotropic system. It is explicitly shown that the domain size increases with the system size as a result of considering a longer range of dipolar interactions. The system exhibits pronounced system size effects for stronger dipolar interactions. The results provide strong evidence to the novel understanding that the dipolar interactions are indeed sufficient to produce long-range ferroelectric order in anisotropic fluids.

  15. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    PubMed

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

  16. Coupled ferromagnetism and ferroelectricity in superlattices of non-ferroelectric antiferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Burton, J. D.; Rogdakis, K.; Seo, J. W.; Viskadourakis, Z.; Wang, Y.; Ah Qune, L.; Choi, E.; Tsymbal, E.; Lee, J.; Panagopoulos, C.

    2013-03-01

    Complex oxide heterostructures present a promising avenue for the design of multifunctional properties which may find application in a variety of technological systems. In heterostructures composed of transition metal oxides the disruption introduced by an interface can affect the balance of the competing interactions among spins, charges and orbitals. This has led to the emergence of properties absent in the original building blocks of a heterostructure. We will report on the discovery of magnetically tunable ferroelectricity in artificial tri-layer superlattices consisting of non-ferroelectric and non-ferromagnetic components: NdMnO3/SrMnO3/LaMnO3. Ferroelectricity was observed below 40 K exhibiting strong tunability by superlattice periodicity. Furthermore, magnetoelectric coupling resulted in 150% magnetic modulation of the polarization. First-principles calculations indicate that broken space inversion symmetry and mixed valency give rise to the observed behavior. This discovery highlights the importance of tri-layered systems for the engineering of emergent properties in oxide heterostructures. 1 University of Nebraska - Lincoln, 2 Foundation for Research and Technology - Hellas, Heraklion, Greece, 3 Nanyang Technological University, Nanyang, Singapore, 4 Sungkyunkwan University, Suwon, Republic of Korea

  17. Structures, electrical properties, and leakage current behaviors of un-doped and Mn-doped lead-free ferroelectric K{sub 0.5}Na{sub 0.5}NbO{sub 3} films

    SciTech Connect

    Wang, Lingyan E-mail: wren@mail.xjtu.edu.cn; Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Shi, Peng; Wu, Xiaoqing

    2014-01-21

    Lead-free ferroelectric un-doped and doped K{sub 0.5}Na{sub 0.5}NbO{sub 3} (KNN) films with different amounts of manganese (Mn) were prepared by a chemical solution deposition method. The thicknesses of all films are about 1.6 μm. Their phase, microstructure, leakage current behavior, and electrical properties were investigated. With increasing the amounts of Mn, the crystallinity became worse. Fortunately, the electrical properties were improved due to the decreased leakage current density after Mn-doping. The study on leakage behaviors shows that the dominant conduction mechanism at low electric field in the un-doped KNN film is ohmic mode and that at high electric field is space-charge-limited and Pool-Frenkel emission. After Mn doping, the dominant conduction mechanism at high electric field of KNN films changed single space-charge-limited. However, the introduction of higher amount of Mn into the KNN film would lead to a changed conduction mechanism from space-charge-limited to ohmic mode. Consequently, there exists an optimal amount of Mn doping of 2.0 mol. %. The 2.0 mol. % Mn doped KNN film shows the lowest leakage current density and the best electrical properties. With the secondary ion mass spectroscopies and x-ray photoelectron spectroscopy analyses, the homogeneous distribution in the KNN films and entrance of Mn element in the lattice of KNN perovskite structure were also confirmed.

  18. Ferroelectric instability under screened Coulomb interactions.

    PubMed

    Wang, Yong; Liu, Xiaohui; Burton, J D; Jaswal, Sitaram S; Tsymbal, Evgeny Y

    2012-12-14

    We explore the effect of charge carrier doping on ferroelectricity using density functional calculations and phenomenological modeling. By considering a prototypical ferroelectric material, BaTiO(3), we demonstrate that ferroelectric displacements are sustained up to the critical concentration of 0.11 electron per unit cell volume. This result is consistent with experimental observations and reveals that the ferroelectric phase and conductivity can coexist. Our investigations show that the ferroelectric instability requires only a short-range portion of the Coulomb force with an interaction range of the order of the lattice constant. These results provide a new insight into the origin of ferroelectricity in displacive ferroelectrics and open opportunities for using doped ferroelectrics in novel electronic devices. PMID:23368377

  19. Modulation of homochiral Dy(III) complexes: single-molecule magnets with ferroelectric properties.

    PubMed

    Li, Xi-Li; Chen, Chun-Lai; Gao, Yu-Liang; Liu, Cai-Ming; Feng, Xiang-Li; Gui, Yang-Hai; Fang, Shao-Ming

    2012-11-12

    Homochiral Dy(III) complexes: by changing the ligand-to-metal ratio, enantiomeric pairs of a Dy(III) complex of different nuclearity could be obtained. The mono- and dinuclear complexes exhibit characteristics of single-molecule magnets and different slow magnetic relaxation processes. In addition, the dinuclear complexes exhibit ferroelectric behavior, thus representing the first chiral polynuclear lanthanide-based single-molecule magnets with ferroelectric properties.

  20. Ferroelectricity in undoped hafnium oxide

    SciTech Connect

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  1. Ferroelectricity in undoped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Polakowski, Patrick; Müller, Johannes

    2015-06-01

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4-20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization Pr of up to 10 μC cm-2 as well as a read/write endurance of 1.6 × 105 cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  2. The Modification of Ferroelectric Surfaces for Catalysis

    NASA Astrophysics Data System (ADS)

    Herdiech, Matthew William

    , the reactivity of the Cr2O3/LiNbO 3 system toward O and the reactivity of the RuO2/Pb(Zr 0.2Ti0.8)O3 system toward N, O, and NO was investigated. It is shown that well-ordered Cr2O3 films can be fabricated on positively and negatively poled LiNbO3 as evidenced by LEED, RHEED, XRD, and XPS; however, the conditions necessary to produce the films can cause Cr diffusion into the LiNbO3, potentially obscuring the film/substrate interface. It is also shown that surface Cr in the Cr 2O3 film can be oxidized to Cr5+ by atomic oxygen. Despite the suggestion that opposite compensating charges occur at the Cr2O3 surface on positively and negatively poled LiNbO3, no significant difference between O atom adsorption on Cr2O3 on the two polar substrates or on non-polar alpha-Al 2O3 (0001) could be detected. It is shown by NO TPD measurements that all RuO2-terminated Pb(Zr0.2Ti0.8)O3 surfaces were found to be active toward NO adsorption, although since 02 desorption was never detected it was determined that none of the surfaces were active toward NO dissociation. There were two active sites for NO adsorption for RuO2-terminated Pb(Zr0.2Ti0.8)O3: O on top of Ru and bare Ru sites. Little polarization dependence was observed for NO adsorption directly to Ru, with NO desorption occurring at 425 K for 1.7 ML RuO2 on positively poled Pb(Zr0.2Ti0.8)O 3 and 430 K for 1.8 ML RuO2 on negatively poled Pb(Zr 0.2Ti0.8)O3. However, significant polarization dependence was observed for adsorption to O on top of Ru, with NO desorption occurring at 285 K for 1.7 ML RuO 2 on positively poled Pb(Zr0.2Ti0.8)O3 and 230 K for 1.8 ML RuO2 on negatively poled Pb(Zr0.2Ti 0.8)O3. The stronger NO adsorption for RuO2 on positively poled Pb(Zr0.2Ti0.8)O3 is consistent with theoretical predictions, and shows that ferroelectric materials can be used as substrates in film/substrate systems with polarization dependent behavior. The lack of NO dissociation observed in the experiments is inconsistent with theoretical

  3. Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

    DOE PAGESBeta

    Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.; Kalinin, Sergei V.; Eliseev, Eugene A.; Strikha, Maxym V.

    2015-06-11

    The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These featuresmore » are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.« less

  4. Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

    SciTech Connect

    Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.; Kalinin, Sergei V.; Eliseev, Eugene A.; Strikha, Maxym V.

    2015-06-11

    The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These features are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.

  5. Emission from ferroelectric cathodes

    SciTech Connect

    Sampayan, S.E.; Caporaso, G.J.; Holmes, C.L.; Lauer, E.J.; Prosnitz, D.; Trimble, D.O.; Westenskow, G.A.

    1993-05-17

    We have recently initiated an investigation of electron emission from ferroelectric cathodes. Our experimental apparatus consisted of an electron diode and a 250 kV, 12 ohm, 70 ns pulsed high voltage power source. A planar triode modulator driven by a synthesized waveform generator initiates the polarization inversion and allows inversion pulse tailoring. The pulsed high voltage power source is capable of delivering two high voltage pulses within 50 ns of each other and is capable of operating at a sustained repetition rate of 5 Hz. Our initial measurements indicate that emission current densities above the Child-Langmuir Space Charge Limit are possible. We explain this effect to be based on a non-zero initial energy of the emitted electrons. We also determined that this effect is strongly coupled to relative timing between the inversion pulse and application of the main anode-cathode pulse. We also have initiated brightness measurements of the emitted beam. As in our previous measurements at this Laboratory, we performed the measurement using a pepper pot technique. Beam-let profiles are recorded with a fast phosphor and gated cameras. We describe our apparatus and preliminary measurements.

  6. First-principles theory, coarse-grained models, and simulations of ferroelectrics.

    PubMed

    Waghmare, Umesh V

    2014-11-18

    large-scale simulations while capturing the relevant microscopic interactions quantitatively. In this Account, we first summarize the insights obtained into chemical mechanisms of ferroelectricity using first-principles DFT calculations. We then discuss the principles of construction of first-principles model Hamiltonians for ferroelectric phase transitions in perovskite oxides, which involve coarse-graining in time domain by integrating out high frequency phonons. Molecular dynamics simulations of the resulting model are shown to give quantitative predictions of material-specific ferroelectric transition behavior in bulk as well as nanoscale ferroelectric structures. A free energy landscape obtained through coarse-graining in real-space provides deeper understanding of ferroelectric transitions, domains, and states with inhomogeneous order and points out the key role of microscopic coupling between phonons and strain. We conclude with a discussion of the multiscale modeling strategy elucidated here and its application to other materials such as shape memory alloys.

  7. First-principles theory, coarse-grained models, and simulations of ferroelectrics.

    PubMed

    Waghmare, Umesh V

    2014-11-18

    large-scale simulations while capturing the relevant microscopic interactions quantitatively. In this Account, we first summarize the insights obtained into chemical mechanisms of ferroelectricity using first-principles DFT calculations. We then discuss the principles of construction of first-principles model Hamiltonians for ferroelectric phase transitions in perovskite oxides, which involve coarse-graining in time domain by integrating out high frequency phonons. Molecular dynamics simulations of the resulting model are shown to give quantitative predictions of material-specific ferroelectric transition behavior in bulk as well as nanoscale ferroelectric structures. A free energy landscape obtained through coarse-graining in real-space provides deeper understanding of ferroelectric transitions, domains, and states with inhomogeneous order and points out the key role of microscopic coupling between phonons and strain. We conclude with a discussion of the multiscale modeling strategy elucidated here and its application to other materials such as shape memory alloys. PMID:25361389

  8. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  9. Ferroelectric Fluid Flow Control Valve

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  10. Terahertz sensing using ferroelectric nanowires.

    PubMed

    Herchig, R; Schultz, Kimberly; McCash, Kevin; Ponomareva, I

    2013-02-01

    Molecular dynamics simulations are used to study the interaction of ferroelectric nanowires with terahertz (THz) Gaussian-shaped pulses of electric field. The computational data indicate the existence of two interaction scenarios that are associated with 'lossless' and dissipative, or 'lossy', interaction mechanisms. A thermodynamical approach is used to analyze the computational data for a wide range of THz pulses. The analysis establishes the foundation for understanding the nanowires' response to the THz pulses and reveals the potential of ferroelectric nanowires to function as nanoscale sensors of THz radiation. Various aspects of this THz nanosensing are analyzed and discussed.

  11. Generalized Ferroelectricity in the Mesomorphic Phase of Nylon Polymers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongbo; Zhu, Lei; Litt, Morton

    Novel ferroelectric polymers, featured by narrow electric displacement-electric (D-E) hysteresis loop, are attractive for electric energy storage applications due to their high dielectric constant and low loss property. Currently, only poly(vinylidene fluoride) (PVDF)-based copolymers (e-beamed) and terpolymers show novel ferroelectric behavior. It is desired to achieve novel ferroelectricity in other polymers such as nylons by carefully modifying the chemical and crystal structures. In this presentation, isomorphic crystals are successfully achieved by copolymerization of nylon 11 and nylon 12 with different compositions. In this way, both chemical and structural defects (i.e., dangling amide groups and kinked bonds) are introduced into the mesomorphic phase. As a consequence, hydrogen bonding interaction is successfully weakened and thus enhanced ferroelectricity with higher maximum polarization and better polarizability is obtained. In addition, for the purpose of further disturbing the mesomorphic phase and pinning effect, partially methylated nylon copolymers are synthesized. With the help of N-methylation of amide groups, the methylated nylon copolymers show relatively narrow hysteresis loops, suggesting the pinning effect from the N-methylated amide moieties.

  12. Stabilizing the ferroelectric phase in doped hafnium oxide

    SciTech Connect

    Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.

    2015-08-21

    The ferroelectric properties and crystal structure of doped HfO{sub 2} thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO{sub 2} showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO{sub 2} was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO{sub 2} to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO{sub 2} compared to TiN electrodes, yielding a P{sub r} of up to 35 μC/cm{sup 2}. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO{sub 2} films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO{sub 2}.

  13. CuInP₂S₆ Room Temperature Layered Ferroelectric.

    PubMed

    Belianinov, A; He, Q; Dziaugys, A; Maksymovych, P; Eliseev, E; Borisevich, A; Morozovska, A; Banys, J; Vysochanskii, Y; Kalinin, S V

    2015-06-10

    We explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V-likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. The existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing "graphene family".

  14. Optimization of Ferroelectric Ceramics by Design at the Microstructure Level

    SciTech Connect

    Jayachandran, K. P.; Guedes, J. M.; Rodrigues, H. C.

    2010-05-21

    Ferroelectric materials show remarkable physical behaviors that make them essential for many devices and have been extensively studied for their applications of nonvolatile random access memory (NvRAM) and high-speed random access memories. Although ferroelectric ceramics (polycrystals) present ease in manufacture and in compositional modifications and represent the widest application area of materials, computational and theoretical studies are sparse owing to many reasons including the large number of constituent atoms. Macroscopic properties of ferroelectric polycrystals are dominated by the inhomogeneities at the crystallographic domain/grain level. Orientation of grains/domains is critical to the electromechanical response of the single crystalline and polycrystalline materials. Polycrystalline materials have the potential of exhibiting better performance at a macroscopic scale by design of the domain/grain configuration at the domain-size scale. This suggests that piezoelectric properties can be optimized by a proper choice of the parameters which control the distribution of grain orientations. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Hence we have implemented the stochastic optimization technique of simulated annealing combined with the homogenization for the optimization problem. The mathematical homogenization theory of a piezoelectric medium is implemented in the finite element method (FEM) by solving the coupled equilibrium electrical and mechanical fields. This implementation enables the study of the dependence of the macroscopic electromechanical properties of a typical crystalline and polycrystalline ferroelectric ceramic on the grain orientation.

  15. Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Ahmad, M. M.; Kotru, P. N.

    2016-04-01

    Gel-grown single crystals of [Pr2(C3H2O4)3(H2O)6] exhibit remarkably flat habit faces, the most predominant being {110}. High-resolution x-ray diffraction analysis showed that the crystals are free from structural grain boundaries, which is the key requirement for single crystals for use in the microelectronics industry to serve as low-dielectric-constant ferroelectric material. The dielectric behavior recorded on {110} planes of single crystals shows that the crystal is ferroelectric with transition temperature T c = 135°C, which differs from the Curie-Weiss temperature T 0 by 2°C (T 0 < T c). Material in pellet form is shown to exhibit slightly different dielectric behavior. Polarization versus electric field confirms the ferroelectric behavior of the material. The dielectric behavior is also supported by the results of thermal studies, viz. thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The magnetic susceptibility and magnetic moment are calculated to be 30.045 × 10-6 emu and 3.092 BM, respectively.

  16. True ferroelectric switching in thin films of trialkylbenzene-1,3,5-tricarboxamide (BTA).

    PubMed

    Gorbunov, A V; Putzeys, T; Urbanavičiūtė, I; Janssen, R A J; Wübbenhorst, M; Sijbesma, R P; Kemerink, M

    2016-08-24

    We have investigated the ferroelectric polarization switching properties of trialkylbenzene-1,3,5-tricarboxamide (BTA), which is a model system for a large class of novel organic ferroelectric materials. In the solid state BTAs form a liquid crystalline columnar hexagonal phase that provides long range order that was previously shown to give rise to hysteretic dipolar switching. In this work the nature of the polar switching process is investigated by a combination of dielectric relaxation spectroscopy, depth-resolved pyroelectric response measurements, and classical frequency- and time-dependent electrical switching. We show that BTAs, when brought in a homeotropically aligned hexagonal liquid crystalline phase, are truly ferroelectric. Analysis of the transient switching behavior suggests that the ferroelectric switching is limited by a highly dispersive nucleation process, giving rise to a wide distribution of switching times.

  17. True ferroelectric switching in thin films of trialkylbenzene-1,3,5-tricarboxamide (BTA).

    PubMed

    Gorbunov, A V; Putzeys, T; Urbanavičiūtė, I; Janssen, R A J; Wübbenhorst, M; Sijbesma, R P; Kemerink, M

    2016-08-24

    We have investigated the ferroelectric polarization switching properties of trialkylbenzene-1,3,5-tricarboxamide (BTA), which is a model system for a large class of novel organic ferroelectric materials. In the solid state BTAs form a liquid crystalline columnar hexagonal phase that provides long range order that was previously shown to give rise to hysteretic dipolar switching. In this work the nature of the polar switching process is investigated by a combination of dielectric relaxation spectroscopy, depth-resolved pyroelectric response measurements, and classical frequency- and time-dependent electrical switching. We show that BTAs, when brought in a homeotropically aligned hexagonal liquid crystalline phase, are truly ferroelectric. Analysis of the transient switching behavior suggests that the ferroelectric switching is limited by a highly dispersive nucleation process, giving rise to a wide distribution of switching times. PMID:27510767

  18. Dual nature of the ferroelectric and metallic state in LiOsO3

    NASA Astrophysics Data System (ADS)

    Giovannetti, Gianluca; Capone, Massimo

    2014-11-01

    Using density functional theory we investigate the lattice instability and electronic structure of recently discovered ferroelectric metal LiOsO3. We show that the ferroelectric-like lattice instability is related to the Li-O distortion modes while the Os-O displacements change the d -p hybridization as in common ferroelectric insulators. Within the manifold of the d orbitals, a dual behavior emerges. In the ferroelectric transition the empty eg orbitals change their hybridization with the oxygen p orbitals, while the t2 g orbitals are responsible for the metallic response. Interestingly, these orbitals are nominally half filled by three electrons, a configuration which suffers from strong correlation effects even for moderate values of the screened Coulomb interaction.

  19. Defect-mediated polarization switching in ferroelectrics and related materials: from mesoscopic mechanisms to atomistic control.

    PubMed

    Kalinin, Sergei V; Rodriguez, Brian J; Borisevich, Albina Y; Baddorf, Arthur P; Balke, Nina; Chang, Hye Jung; Chen, Long-Qing; Choudhury, Samrat; Jesse, Stephen; Maksymovych, Peter; Nikiforov, Maxim P; Pennycook, Stephen J

    2010-01-19

    The plethora of lattice and electronic behaviors in ferroelectric and multiferroic materials and heterostructures opens vistas into novel physical phenomena including magnetoelectric coupling and ferroelectric tunneling. The development of new classes of electronic, energy-storage, and information-technology devices depends critically on understanding and controlling field-induced polarization switching. Polarization reversal is controlled by defects that determine activation energy, critical switching bias, and the selection between thermodynamically equivalent polarization states in multiaxial ferroelectrics. Understanding and controlling defect functionality in ferroelectric materials is as critical to the future of oxide electronics and solid-state electrochemistry as defects in semiconductors are for semiconductor electronics. Here, recent advances in understanding the defect-mediated switching mechanisms, enabled by recent advances in electron and scanning probe microscopy, are discussed. The synergy between local probes and structural methods offers a pathway to decipher deterministic polarization switching mechanisms on the level of a single atomically defined defect.

  20. The Soft Mode Driven Dynamics in Ferroelectric Perovskites at the Nanoscale: An Atomistic Study

    NASA Astrophysics Data System (ADS)

    McCash, Kevin

    . The performance of a ferroelectric device is therefore directly influenced by the dynamics of the soft mode. Interestingly, however, little study has been done on the effect of mechanical boundary conditions on the soft modes of perovskites. Understanding the effect of mechanical forces on the soft modes is critical to device applications as complicated growth structures often are the cause of pressures, stresses and strains. Using classical molecular dynamics we study the effect of hydrostatic pressure, uniaxial stress, biaxial stress and biaxial strain on the soft modes of the ferroelectric PbTiO 3. The results of this study indicate the existence of Curie-Weiss laws for not only hydrostatic pressure, which is well known, but also for uniaxial stress, biaxial stress and biaxial strain. The mode frequencies are also seen to respond very differently to these mechanical forces and lead to a more complete picture of the behavior of nanoscale ferroelectrics. One nanoscale geometry of perovskite ferroelectrics is the pseudo one-dimensional nanowire. These structures have very unique properties that are highly attractive for use as interconnects, nanoscale sensors or more directly in computer memory devices. Perovskite nanowires have only recently been synthesized and the techniques are not well developed. While progress has been made towards consistently fabricating uniform, high quality nanowires experimental investigation of their properties is prohibitively difficult. Of immediate interest is the polarization reversal dynamics of ferroelectric nanowires. The reading and writing of bits of information stored in a wire's polarization state is done by switching the polarization. Again using classical molecular dynamics we study the polarization reversal dynamics in ferroelectric nanowires made of Pb(Ti1-xZrx)O 3 disordered alloy. We find that there are two competing mechanisms for polarization reversal and that the interplay of these mechanisms is dependent on electric

  1. Thickness-dependent retention behaviors and ferroelectric properties of BiFeO3 thin films on BaPbO3 electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Chia-Ching; Wu, Jenn-Ming

    2007-09-01

    BiFeO3 (BFO) thin films produced with varied film thicknesses ranging from 100to230nm were fabricated on BaPbO3(BPO )/Pt/Ti/SiOx/Si substrates by rf-magnetron sputtering. Saturated polarization-electrical field hysteresis loops, polarization response by pulse measurement, and retention properties were obtained for BFO films with various thicknesses on BPO. The retention behaviors of BFO demonstrate logarithmic time dependence and stretched exponential law. When the thicknesses of BFO films increase, the contribution of logarithmic time dependence to retention, the stretched exponential law becomes dominant. BFO films with thinner thickness exhibit better retention properties but possess smaller remnant polarization.

  2. Physical Properties of Ferroelectric Mixed Crystals

    NASA Astrophysics Data System (ADS)

    Kwun, Sook-Il; Noh, Keum Hwan

    2001-04-01

    The recent studies of the KH2PO4 family mixed crystals with long-range ferroelectric (FE) order and short-range glass order have been reviewed. In mixed crystals of KH2PO4 family FE or antiferroelectric (AFE) with intermediate mixing concentration, a competing interaction gives rise to a nonergodic proton glass (PG) similar to magnetic spin glass. To understand the phase diagram, we have investigated the phase near FE boundary and observed a coexistence of FE and PG in Rb1-x(NH4)xH2AsO4 and Rb1-x(NH4)xH2PO4 mixed crystals. The nonergodic behavior of the coexisting PG was investigated by the polarization as well as dielectric constant measurement. The remaining FE polarization and the low freezing temperature were discussed in terms of mean field model of dipole glass systems.

  3. Double freezing of dielectric response in relaxor Pb(Mg1/3Nb2/3)O3 crystals

    NASA Astrophysics Data System (ADS)

    Bokov, A. A.; Ye, Z.-G.

    2006-10-01

    The slowing down of dipole dynamics upon cooling into nonergodic relaxor phase in classical relaxor Pb(Mg1/3Nb2/3)O3 crystal is studied using dielectric spectroscopy in the range of 10-4 105Hz . We discover that two overlapping relaxation processes obeying the Kohlrausch-Williams-Watts law, exp[-(t/τ)β] , and the Curie-von Schweidler law, t-n , respectively, tend to freeze out at the same temperature Tf(=213K) . The values of τ-1 , β , and n obey the Vogel-Fulcher law tending to zero at Tf .

  4. Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

    SciTech Connect

    Pan, Xiaoqing

    2015-06-30

    The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structures of BiFeO3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.

  5. Supramolecular bola-like ferroelectric: 4-methoxyanilinium tetrafluoroborate-18-crown-6.

    PubMed

    Fu, Da-Wei; Zhang, Wen; Cai, Hong-Ling; Zhang, Yi; Ge, Jia-Zhen; Xiong, Ren-Gen; Huang, Songping D

    2011-08-17

    Molecular motion is one of the structural foundations for the development of functional molecular materials such as artificial motors and molecular ferroelectrics. Herein, we show that pendulum-like motion of the terminal group of a molecule causes a ferroelectric phase transition. Complex 4-methoxyanilinium tetrafluoroborate-18-crown-6 ([C(7)H(10)NO(18-crown-6)](+)[BF(4)](-), 1) shows a second-order ferroelectric phase transition at 127 K, together with an abrupt dielectric anomaly, Debye-type relaxation behavior, and the symmetry breaking confirmed by temperature dependence of second harmonic generation effect. The origin of the polarization is due to the order-disorder transition of the pendulum-like motions of the terminal para-methyl group of the 4-methoxyanilinium guest cation; that is, the freezing of pendulum motion at low temperature forces significant orientational motions of the guest molecules and thus induces the formation of the ferroelectric phase. The supramolecular bola-like ferroelectric is distinct from the precedent ferroelectrics and will open a new avenue for the design of polar functional materials.

  6. Structure-Curie temperature relationships in BaTiO3-based ferroelectric perovskites: Anomalous behavior of (Ba ,Cd )TiO3 from DFT, statistical inference, and experiments

    NASA Astrophysics Data System (ADS)

    Balachandran, Prasanna V.; Xue, Dezhen; Lookman, Turab

    2016-04-01

    One of the key impediments to the development of BaTiO3-based materials as candidates to replace toxic-Pb-based solid solutions is their relatively low ferroelectric Curie temperature (TC). Among many potential routes that are available to modify TC, ionic substitutions at the Ba and Ti sites remain the most common approach. Here, we perform density functional theory (DFT) calculations on a series of A TiO3 and Ba B O3 perovskites, where A =Ba , Ca, Sr, Pb, Cd, Sn, and Mg and B =Ti , Zr, Hf, and Sn. Our objective is to study the relative role of A and B cations in impacting the TC of the tetragonal (P 4 m m ) and rhombohedral (R 3 m ) ferroelectric phases in BaTiO3-based solid solutions, respectively. Using symmetry-mode analysis, we obtain a quantitative description of the relative contributions of various divalent (A ) and tetravalent (B ) cations to the ferroelectric distortions. Our results show that Ca, Pb, Cd, Sn, and Mg have large mode amplitudes for ferroelectric distortion in the tetragonal phase relative to Ba, whereas Sr suppresses the distortions. On the other hand, Zr, Hf, and Sn tetravalent cations severely suppress the ferroelectric distortion in the rhombohedral phase relative to Ti. In addition to symmetry modes, our calculated unit-cell volume also agrees with the experimental trends. We subsequently utilize the symmetry modes and unit-cell volumes as features within a machine learning approach to learn TC via an inference model and uncover trends that provide insights into the design of new high-TCBaTiO3 -based ferroelectrics. The inference model predicts CdTiO3-BaTiO3 solid solutions to have a higher TC and, therefore, we experimentally synthesized these solid solutions and measured their TC. Although the calculated mode strength for CdTiO3 in the tetragonal phase is even larger than that for PbTiO3, the TC of CdTiO3-BaTiO3 solid solutions in the tetragonal phase does not show any appreciable enhancement. Thus, CdTiO3-BaTiO3 does not follow the

  7. Interlayer exchange coupling across a ferroelectric barrier.

    PubMed

    Zhuravlev, M Ye; Vedyayev, A V; Tsymbal, E Y

    2010-09-01

    A new magnetoelectric effect is predicted originating from the interlayer exchange coupling between two ferromagnetic layers separated by an ultrathin ferroelectric barrier. It is demonstrated that ferroelectric polarization switching driven by an external electric field leads to a sizable change in the interlayer exchange coupling. The effect occurs in asymmetric ferromagnet/ferroelectric/ferromagnet junctions due to a change in the electrostatic potential profile across the junction affecting the interlayer coupling. The predicted phenomenon indicates the possibility of switching the magnetic configuration by reversing the polarization of the ferroelectric barrier layer. PMID:21403276

  8. Electromigration of microspheres in ferroelectric smectic liquid crystals

    NASA Astrophysics Data System (ADS)

    Dierking, I.; Cass, P.; Syres, K.; Cresswell, R.; Morton, S.

    2007-08-01

    When an electric field is applied to microspheres which are dispersed in a ferroelectric smectic liquid crystal, particle translation along the smectic layer plane, i.e., in a direction nearly perpendicular to that of the director, can be observed. Under certain electric field conditions the translation is shown to be linear in time. We have determined the stability regime of linear particle displacement in the parameter space of amplitude and frequency for various applied wave forms. This regime enlarges for increasing electric field amplitude and frequency, with a threshold behavior observed for small parameters. The upper stability boundary is related to the reciprocal ferroelectric switching time. The microspheres translational velocity is independent of the applied electric field amplitude, but increases linearly with applied frequency. The microsphere velocity also increases with increasing temperature, which is indicative of the respective decrease in liquid crystal viscosity. Possible mechanisms of electric-field-induced particle motion are discussed.

  9. Nanocharacterization of the negative stiffness of ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Alipour Skandani, A.; Ctvrtlik, R.; Al-Haik, M.

    2014-08-01

    Phase changing materials such as ferroelectric materials could exhibit negative stiffness under certain thermomechanical environments. This negative stiffness is embodied by a deflection along the opposite direction of the applied load. So far negative stiffness materials were investigated with the specific morphology of embedded inclusions in stiff matrices then the resulting composite is studied to measure the behavior of each constituent indirectly. In this study, a modified nonisothermal nanoindentation method is developed to measure the negative stiffness of triglycine sulfate single crystal directly. This in-situ method is intended to first demonstrate the feasibility of detecting the negative stiffness via nanoindentation and nanocreep of a ferroelectric material at its Curie point and then to quantify the negative stiffness without the need for embedding the crystal within a stiffer matrix.

  10. Ferroelectric Stirling-Cycle Refrigerator

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    A Stirling-cycle refrigerator has a three-pump configuration and pumping sequence, in which one pump serves as a compressor. one pump serves as an expander, and one pump serves as a displacer. The pumps are ferroelectrically actuated diaphragm pumps which are coordinated by synchronizing the ferroelectric-actuator voltages in such a way that the net effect of the displacer is to reduce the deleterious effect of dead space; that is, to circulate a greater fraction of the working fluid through the heat exchangers than would be possible by use of the compressor and expander alone. In addition. the displacer can be controlled separately to make the flow of working fluid in the heat exchangers turbulent (to increase the rate of transfer of heat at the cost of greater resistance to flow) or laminar (to decrease the resistance to flow at the cost of a lower heat-transfer rate).

  11. Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

    SciTech Connect

    Ievlev, Anton; Morozovska, A. N.; Eliseev, E. A.; Shur, Vladimir Ya.; Kalinin, Sergei V

    2014-01-01

    Electric field induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science, and optoelectronics. In the last 20 years, much attention has been focused on the switching of individual domains using scanning probe microscopy, both as model of ferroelectric data storage and approach to explore fundamental physics of ferroelectric switching. The classical picture of tip induced switching includes formation of cylindrical domain oriented along the tip field, with the domain size is largely determined by the tip-induced field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behavior. Here, we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviors are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect). The implications of these behaviors for ferroelectric materials and devices are discussed.

  12. Ferroelectric-dielectric tunable composites

    NASA Astrophysics Data System (ADS)

    Sherman, Vladimir O.; Tagantsev, Alexander K.; Setter, Nava; Iddles, David; Price, Tim

    2006-04-01

    The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. The analytical results for small dielectric concentration and relative tunability are obtained in terms of the traditional electrostatic consideration. The results for large tunability are obtained numerically. A method is proposed for the evaluation of the tunability and loss at large concentrations of the dielectric. The basic idea of the method is to reformulate the effective medium approach in terms of electrical energies stored and dissipated in the composite. The important practical conclusion of the paper is that, for random ferroelectric-dielectric composite, the addition of small amounts of a linear dielectric into the tunable ferroelectric results in an increase of the tunability of the mixture. The loss tangent of such composites is shown to be virtually unaffected by the addition of moderate amounts of the low-loss dielectric. The experimental data for (Ba,Sr)TiO3 based composites are analyzed in terms of the theory developed and shown to be in a reasonable agreement with the theoretical results.

  13. Ferroelectric studies of excessive Sm{sup 3+} containing perovskite PZT and pyrochlore biphase ceramics

    SciTech Connect

    Babu, T. Anil; Sastry, D. L.; Ramesh, K. V.; Reddy, V. Raghavendra

    2014-04-24

    Polycrystalline samples of Sm{sup 3+} modified Pb{sub 1−x} Sm{sub 2x/3} (Zr{sub 0.6}Ti{sub 0.4}) O{sub 3} (PSZT) ceramics (where x = 0.1, 0.2, 0.3, 0.4) have been prepared by a high energy ball milling technique, followed by calcination at 950°C and sintering at 1150°C. As x is increased more than 0.1 mole%, considerable secondary phase has been formed. This phase has been identified as pyrochlore Sm{sub 2}Ti{sub 2}O{sub 7} from its X-ray diffraction (XRD) peaks. The XRD studies also indicate that the perovskte phases of the present systems undergo a dopant induced phase transformation from rhombohedral to tetragonal strucure. All the samples exhibit diffuse but non-relaxor type ferroelectric phase transition. The results of dielectric and hysteresis studies of these materials are presented.

  14. Ferroelectric Polarization in CH3NH3PbI3 Perovskite.

    PubMed

    Kim, Hui-Seon; Kim, Sung Kyun; Kim, Byeong Jo; Shin, Kyung-Sik; Gupta, Manoj Kumar; Jung, Hyun Suk; Kim, Sang-Woo; Park, Nam-Gyu

    2015-05-01

    We report on ferroelectric polarization behavior in CH3NH3PbI3 perovskite in the dark and under illumination. Perovskite crystals with three different sizes of 700, 400, and 100 nm were prepared for piezoresponse force microscopy (PFM) measurements. PFM results confirmed the formation of spontaneous polarization in CH3NH3PbI3 in the absence of electric field, where the size dependency to polarization was not significant. Whereas the photoinduced stimulation was not significant without an external electric field, the stimulated polarization by poling was further enhanced under illumination. The retention of ferroelectric polarization was also observed after removal of the electric field, in which larger crystals showed longer retention behavior compared to the smaller sized one. Additionally, we suggest the effect of perovskite crystal size (morphology) on charge collection at the interface of the ferroelectric material even though insignificant size dependency in electric polarization was observed.

  15. Quantum Monte Carlo simulation of the ferroelectric or ferrielectric nanowire with core shell morphology

    NASA Astrophysics Data System (ADS)

    Feraoun, A.; Zaim, A.; Kerouad, M.

    2016-09-01

    By using the Quantum Monte Carlo simulation; the electric properties of a nanowire, consisting of a ferroelectric core of spin-1/2 surrounded by a ferroelectric shell of spin-1/2 with ferro- or anti-ferroelectric interfacial coupling have been studied within the framework of the Transverse Ising Model (TIM). We have examined the effects of the shell coupling Js, the interfacial coupling JInt, the transverse field Ω, and the temperature T on the hysteresis behavior and on the electric properties of the system. The remanent polarization and the coercive field as a function of the transverse field and the temperature are examined. A number of characteristic behavior have been found such as the appearance of triple hysteresis loops for appropriate values of the system parameters.

  16. Ferroelectric translational antiphase boundaries in nonpolar materials.

    PubMed

    Wei, Xian-Kui; Tagantsev, Alexander K; Kvasov, Alexander; Roleder, Krystian; Jia, Chun-Lin; Setter, Nava

    2014-01-01

    Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from those of the domains themselves, leading to new exploitable phenomena. Even more exciting is that a non-ferroelectric material may have domain boundaries that are ferroelectric. Many materials possess translational antiphase boundaries. Such boundaries could be interesting entities to carry information if they were ferroelectric. Here we show first that antiphase boundaries in antiferroelectrics may possess ferroelectricity. We then identify these boundaries in the classical antiferroelectric lead zirconate and evidence their polarity by electron microscopy using negative spherical-aberration imaging technique. Ab initio modelling confirms the polar bi-stable nature of the walls. Ferroelectric antiphase boundaries could make high-density non-volatile memory; in comparison with the magnetic domain wall memory, they do not require current for operation and are an order of magnitude thinner.

  17. Ferroelectric translational antiphase boundaries in nonpolar materials

    PubMed Central

    Wei, Xian-Kui; Tagantsev, Alexander K.; Kvasov, Alexander; Roleder, Krystian; Jia, Chun-Lin; Setter, Nava

    2014-01-01

    Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from those of the domains themselves, leading to new exploitable phenomena. Even more exciting is that a non-ferroelectric material may have domain boundaries that are ferroelectric. Many materials possess translational antiphase boundaries. Such boundaries could be interesting entities to carry information if they were ferroelectric. Here we show first that antiphase boundaries in antiferroelectrics may possess ferroelectricity. We then identify these boundaries in the classical antiferroelectric lead zirconate and evidence their polarity by electron microscopy using negative spherical-aberration imaging technique. Ab initio modelling confirms the polar bi-stable nature of the walls. Ferroelectric antiphase boundaries could make high-density non-volatile memory; in comparison with the magnetic domain wall memory, they do not require current for operation and are an order of magnitude thinner. PMID:24398704

  18. Enhanced electrocaloric effect in displacive-type organic ferroelectrics

    SciTech Connect

    Ding, L. J. Zhong, Y.; Fan, S. W.; Zhu, L. Y.

    2015-08-07

    We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature T{sub C}. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As T{sub C} is tuned to ∼310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above T{sub C} and a metaelectric transition line below T{sub C} that demonstrates an FE switching behavior with an antiparallel field.

  19. High Temperature Ferroelectrics for Actuators: Recent Developments and Challenges

    NASA Technical Reports Server (NTRS)

    Sehirlioglu, Alp; Kowalski, Benjamin

    2014-01-01

    A variety of piezoelectric applications have been driving the research in development of new high temperature ferroelectrics; ranging from broader markets such as fuel and gas modulation and deep well oil drilling to very specific applications such as thermoacoustic engines and ultrasonic drilling on the surface of Venus. The focus has been mostly on increasing the Curie temperature. However, greater challenges for high temperature ferroelectrics limit the operating temperature to levels much below the Curie temperature. These include enhanced loss tangent and dc conductivity at high fields as well as depoling due to thermally activated domain rotation. The initial work by Eitel et al. [Jpn. J. Appl. Phys., 40 [10, Part 1] 59996002 (2001)] increased interest in investigation of Bismuth containing perovskites in solid solution with lead titanate. Issues that arise vary from solubility limits to increased tetragonality; the former one prohibits processing of morphotropic phase boundary, while the latter one impedes thorough poling of the polycrystalline ceramics. This talk will summarize recent advances in development of high temperature piezoelectrics and provide information about challenges encountered as well as the approaches taken to improve the high temperature behavior of ferroelectrics with a focus on applications that employ the converse piezoelectric effect.

  20. Towards the limit of ferroelectric nanosized grains

    NASA Astrophysics Data System (ADS)

    Roelofs, A.; Schneller, T.; Szot, K.; Waser, R.

    2003-02-01

    Ferroelectric random access memories are non-volatile, low voltage, high read/write speed devices which have been introduced into the market in recent years and which show the clear potential of future gigabit scale universal non-volatile memories. The ultimate limit of this concept will depend on the ferroelectric limit (synonymous superparaelectric limit), i.e. the size limit below which the ferroelectricity is quenched. While there are clear indications that 2D ferroelectric oxide films may sustain their ferroelectric polarization below 4 nm in thickness (Tybell T, Ahn C H and Triscone J M 1999 Appl. Phys. Lett. 75 856), the limit will be quite different for isolated 3D nanostructures (nanograins, nanoclusters). To investigate scaling effects of ferroelectric nanograins on Si wafers, we studied PbTiO3 (PTO) and Pb(ZrxTi1-x)O3 grown by a self-assembly chemical solution deposition method. Preparing highly diluted precursor solutions we achieved single separated ferroelectric grains with grain sizes ranging from 200 nm down to less than 20 nm. For grains smaller than 20 nm, no piezoresponse was observed and we suppose this could be due to the transition from the ferroelectric to the paraelectric phase which has no spontaneous polarization. Recent calculations (Zhong W L, Wang Y G, Zhang P L and Qu B D 1994 Phys. Rev. B 50 698) and experiments (Jiang B, Peng J L, Zhong W L and Bursill L A 2000 J. Appl. Phys. 87 3462) showed that the ferroelectricity of fine ferroelectric particles decrease with decreasing particle size. From these experiments the extrapolated critical size of PTO particles was found to be around 4.2-20 nm.

  1. Thin layer composite unimorph ferroelectric driver and sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    2004-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  2. Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

    NASA Technical Reports Server (NTRS)

    Helbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Antony, Jr. (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    1995-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  3. Thin Layer Composite Unimorph Ferroelectric Driver and Sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor)

    1997-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  4. Ferroelectric vortices from atomistic simulations

    NASA Astrophysics Data System (ADS)

    Bellaiche, Laurent

    2011-03-01

    In 2004, the use of a first-principles-based effective Hamiltonian led to the prediction of a novel structure in zero-dimensional ferroelectrics, in which the electric dipoles organize themselves to form a vortex. Such structure exhibits the so-called spontaneous toroidal moment, rather than the spontaneous polarization, as its order parameter. Subsequently, various original phenomena, all related to vortices, were predicted in ferroelectric nanostructures. Examples of such phenomena are: (i) the existence of a new order parameter, denoted as the hypertoroidal moment, that is associated with many complex dipolar structures (such as double-vortex states); (ii) the possible control of single and double vortex states by electric fields, via the formation of original intermediate states [4-8]; (iii) the discovery of a new class of quantum materials (denoted as incipient ferrotoroidics), for which zero-point vibrations wash out the vortex state and yield a complex local structure; (iv) the existence of chiral patterns of oxygen octahedral tiltings that originate from the coupling of these tiltings with the ferroelectric vortices. The purpose of this talk is to discuss some of these striking phenomena, as well as, to reveal others (if time allows). These studies are done in collaboration with A.R. Akbarzadeh, H. Fu, I. Kornev, I. Naumov, I. Ponomareva, S. Prosandeev, Wei Ren and D. Sichuga. These works are supported by the NSF grants DMR 0701558 and DMR-0080054 (C-SPIN), DOE grant DE-SC0002220, and ONR grants N00014-08-1-0915 and N00014-07-1-0825 (DURIP).

  5. High photovoltages in ferroelectric ceramics

    NASA Technical Reports Server (NTRS)

    Brody, P. S.

    1976-01-01

    The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

  6. Calligraphic Poling of Ferroelectric Material

    NASA Technical Reports Server (NTRS)

    Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

    2007-01-01

    Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

  7. Structural studies on ferroelectric and ferrodistortive materials

    NASA Astrophysics Data System (ADS)

    Zou, Mingqin

    The structure of the piezoelectric material 0.68PbMg1/3Nb 2/3O3-0.32PbTiO3 have been studied by single crystal, powder x-ray diffraction techniques over the temperature range from 25°C to 200°C. The existence of twinned structures or coexistence of rhombohedral and tetragonal phases has been shown by the peak distortion of Bragg reflections. Superlattice structure was observed for all experimental PMN-PT crystals. Refinement results showed that the 2 x 2 x 2 superlattice resulted from anti-parallel displacement of oxygen in the adjacent conventional perovskite unit cells. No cation displacement in the paraelectric phase and little in the ferroelectric phase were shown by the refinement results. This unique feature associated with the ferroelectric mechanism of the material was explained by comparison with PbMg1/3Nb2/3O3. The crystals were extensively characterized by using powder x-ray diffraction, Laue back-reflection and electron backscatter diffraction (EBSD) techniques. The detailed orientation information such as misorientation of grains, location of grain boundaries and the orientation distribution was obtained from the automatic orientation mapping with the EBSD technique. The uniform orientation was confirmed for crystals with a "cellular-like" structure. A crystal growth model, the two-dimensional layer mechanism, was proposed by orientation analysis. Based on the model, some important comments were made on orientation problems under general growth conditions. The ferrodistortive phase transitions of tertramethylphosphonium tetrabromozincate [P(CH3)4]2ZnBr4 and tertramethylphosphonium tetraiodonzincate [P(CH3)4]2ZnI4 were thoroughly studied by a single crystal x-ray diffraction technique. An order parameter analysis by application of Landau theory showed that the two compounds undergo first-order phase transitions near a tricritical Lifshitz point. Transitions for both compounds appear to be first order, but with the iodo salt the transition is nearly

  8. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation. PMID:27296225

  9. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  10. Polarization of ferroelectric films through electrolyte.

    PubMed

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T; Forchheimer, Robert; Berggren, Magnus

    2016-03-16

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced--in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures--and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments.

  11. New perspectives for ferroelectric LC-polymers

    SciTech Connect

    Brehmer, M.; Gebhard, E.; Wittig, T.

    1996-10-01

    LC-Elastomers prepared from ferroelectric LC-polymers are interesting materials for two reasons. From a materials point of view they are interesting because of their ferroelectric, piezoelectric and pyrroelectric properties. From a scientific point of view they are fascinating because they allow us to study the interplay of electric and mechanical forces in a rubbery material The coupling between the director reorientation and the network can be modified by crosslinking at the end of the mesogens or in the range of the polymer chains . In the last case the coupling is minimal. Besides the planar orientation in SSFLC-cells, free standing films offer the possibility of a homeotropic alignment of smectic liquid crystals ferroelectric LC elastomers of a different topology can be obtained by mixing a low molar mass or an oligomeric ferroelectric LC with a bifunctional crosslinkable: liquid crystal and performing photochemically a crosslinking reaction in one switching state of the smectic C* phase. As a result non crosslinkable ferroelectric LC will form micro-droplets surrounded by a densely crosslinked network, which is formed by the crosslinked non-ferroelectric liquid crystals. This gives a two phasic Volume or Network Stabilized Ferroelectric Liquid Crystal.

  12. Polarization of ferroelectric films through electrolyte.

    PubMed

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T; Forchheimer, Robert; Berggren, Magnus

    2016-03-16

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced--in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures--and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments. PMID:26885704

  13. Polarization of ferroelectric films through electrolyte

    NASA Astrophysics Data System (ADS)

    Toss, Henrik; Sani, Negar; Fabiano, Simone; Simon, Daniel T.; Forchheimer, Robert; Berggren, Magnus

    2016-03-01

    A simplified model is developed to understand the field and potential distribution through devices based on a ferroelectric film in direct contact with an electrolyte. Devices based on the ferroelectric polymer polyvinylidenefluoride-trifluoroethylene (PVDF-TrFE) were produced—in metal-ferroelectric-metal, metal-ferroelectric-dielectric-metal, and metal-ferroelectric-electrolyte-metal architectures—and used to test the model, and simulations based on the model and these fabricated devices were performed. From these simulations we find indication of progressive polarization of the films. Furthermore, the model implies that there is a relation between the separation of charge within the devices and the observed open circuit voltage. This relation is confirmed experimentally. The ability to polarize ferroelectric polymer films through aqueous electrolytes, combined with the strong correlation between the properties of the electrolyte double layer and the device potential, opens the door to a variety of new applications for ferroelectric technologies, e.g. regulation of cell culture growth and release, steering molecular self-assembly, or other large area applications requiring aqueous environments.

  14. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  15. Ferroelectric Metal in Tetragonal BiCoO3/BiFeO3 Bilayers and Its Electric Field Effect.

    PubMed

    Yin, Li; Mi, Wenbo; Wang, Xiaocha

    2016-02-03

    By first-principles calculations we investigate the electronic structure of tetragonal BiCoO3/BiFeO3 bilayers with different terminations. The multiferroic insulator BiCoO3 and BiFeO3 transform into metal in all of three models. Particularly, energetically favored model CoO2-BiO exhibits ferroelectric metallic properties, and external electric field enhances the ferroelectric displacements significantly. The metallic character is mainly associated to eg electrons, while t2g electrons are responsible for ferroelectric properties. Moreover, the strong hybridization between eg and O p electrons around Fermi level provides conditions to the coexistence of ferroelectric and metallic properties. These special behaviors of electrons are influenced by the interfacial electronic reconstruction with formed Bi-O electrovalent bond, which breaks OA-Fe/Co-OB coupling partially. Besides, the external electric field reverses spin polarization of Fe/Co ions efficiently, even reaching 100%.

  16. Ferroelectric Metal in Tetragonal BiCoO3/BiFeO3 Bilayers and Its Electric Field Effect

    PubMed Central

    Yin, Li; Mi, Wenbo; Wang, Xiaocha

    2016-01-01

    By first-principles calculations we investigate the electronic structure of tetragonal BiCoO3/BiFeO3 bilayers with different terminations. The multiferroic insulator BiCoO3 and BiFeO3 transform into metal in all of three models. Particularly, energetically favored model CoO2-BiO exhibits ferroelectric metallic properties, and external electric field enhances the ferroelectric displacements significantly. The metallic character is mainly associated to eg electrons, while t2g electrons are responsible for ferroelectric properties. Moreover, the strong hybridization between eg and O p electrons around Fermi level provides conditions to the coexistence of ferroelectric and metallic properties. These special behaviors of electrons are influenced by the interfacial electronic reconstruction with formed Bi-O electrovalent bond, which breaks OA-Fe/Co-OB coupling partially. Besides, the external electric field reverses spin polarization of Fe/Co ions efficiently, even reaching 100%. PMID:26839049

  17. Direct observation of the recovery of an antiferroelectric phase during polarization reversal of an induced ferroelectric phase

    NASA Astrophysics Data System (ADS)

    Guo, Hanzheng; Tan, Xiaoli

    2015-04-01

    Electric fields are generally known to favor the ferroelectric polar state over the antiferroelectric nonpolar state for their Coulomb interactions with dipoles in the crystal. In this paper, we directly image an electric-field-assisted ferroelectric-to-antiferroelectric phase transition during polarization reversal of the ferroelectric phase in polycrystalline P b0.99{N b0.02[(Zr0.57Sn0.43) 0.92T i0.08] 0.98}O3 . With the electric-field in situ transmission electron microscopy technique, such an unlikely phenomenon is verified to occur by both domain morphology change and electron-diffraction analysis. The slower kinetics of the phase transition, compared with ferroelectric polarization reversal, is suggested to contribute to this unusual behavior.

  18. New low temperature multiphase ferroelectric films

    NASA Astrophysics Data System (ADS)

    Bescher, Eric; Xu, Yuhuan; Mackenzie, J. D.

    2001-06-01

    This article describes the low-temperature synthesis of new multiphase ferroelectrics containing an inorganic ferroelectric phase entrapped in amorphous silica or in an organically modified silicate (ormosil). Sol gel derived LiNbO3 and BaTiO3 crystals were grown in SiO2 and in RSiO1.5 glass where R contains a chromophore (TDP) insensitive to hydrolysis and condensation reactions. The LiNbO3-SiO2 and BaTiO3-SiO2 compositions as well as the TDP-LiNbO3-SiO2 and TDP-BaTiO3-SiO2 ormosils exhibit ferroelectric-like properties. This unusual characteristic is due to the presence of small, partially ordered crystallites of the ferroelectric, dispersed in the amorphous matrix. In addition to their ferroelectric properties, the ormosils also exhibit interesting optical characteristics: the TDP-BaTiO3-SiO2 materials are red, whereas the TDP-LiNbO3-SiO2 are yellow. The materials described in this article are representative of two new classes of weak ferroelectrics. In the first class, a ferroelectric is dispersed in an amorphous matrix. The second class may be called "organically-modified crystals": small ferroelectric crystals embedded in an organically modified matrix. The fabrication of such materials is possible for inorganic crystalline phases forming at temperatures below the decomposition temperature of the organic (about 250 °C). This article also contains some theoretical considerations explaining why these materials, although amorphous by x-ray diffraction, exhibit ferroelectric-like properties.

  19. Structural Consequences of Ferroelectric Nanolithography

    SciTech Connect

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  20. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  1. Ferroelectric ceramics in a pyroelectric accelerator

    SciTech Connect

    Shchagin, A. V.; Miroshnik, V. S.; Volkov, V. I.; Oleinik, A. N.

    2015-12-07

    The applicability of polarized ferroelectric ceramics as a pyroelectric in a pyroelectric accelerator is shown by experiments. The spectra of X-ray radiation of energy up to tens of keV, generated by accelerated electrons, have been measured on heating and cooling of the ceramics in vacuum. It is suggested that curved layers of polarized ferroelectric ceramics be used as elements of ceramic pyroelectric accelerators. Besides, nanotubes and nanowires manufactured from ferroelectric ceramics are proposed for the use in nanometer-scale ceramic pyroelectric nanoaccelerators for future applications in nanotechnologies.

  2. Implementation of Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.; Kamp, David A.; Isaacson, Alan F.

    2000-01-01

    Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

  3. Ferroelectric Memory Capacitors For Neural Networks

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Moopenn, Alexander W.; Stadler, Henry L.

    1991-01-01

    Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

  4. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    SciTech Connect

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  5. Strong ultrasonic microwaves in ferroelectric ceramics.

    PubMed

    Arlt, G

    1998-01-01

    It is well known that ferroelectric materials have piezoelectric properties which allow the transformation of electrical signals into mechanical signals and vice versa. The transducer action normally is restricted to frequencies up to the mechanical resonance frequency of the sample. There are, however, two mechanisms which allow transducer action in ferroelectric ceramics at much higher frequencies: one is the normal piezoelectric effect in a ferroelectric ceramic in which the crystallites have periodic domain structures, the other is a domain wall effect in which ferroelastic domain walls in a periodic domain structure are powerful shear wave emitters. Both mechanisms give rise to extensive dielectric losses in ceramics at microwave frequencies. PMID:18244152

  6. 23 GHz ferroelectric electron gun based gyrotron

    NASA Astrophysics Data System (ADS)

    Ben-Moshe, R.; Einat, M.

    2011-04-01

    Ferroelectric cathodes have been explored as an alternative electron source for microwave tubes. Past experiments have demonstrated operation at frequencies of 2-10 GHz. Since the ferroelectric cathode is based on surface plasma, the relatively high energy spread limits the tube operation frequency. Hence, the possibility to obtain higher frequencies remained questionable. In this experimental work a gyrotron oscillator was designed with the operation frequency increased toward that of millimeter waves. A cylindrical tube with a cutoff frequency of ˜22 GHz was integrated to a ferroelectric electron gun. Pulses of ˜0.5 μs duration with a frequency of 23 GHz were obtained.

  7. Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

    2016-10-01

    Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

  8. Antiferroelectric-to-Ferroelectric Switching in CH3NH3PbI3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Sewvandi, Galhenage A.; Hu, Dengwei; Chen, Changdong; Ma, Hao; Kusunose, Takafumi; Tanaka, Yasuhiro; Nakanishi, Shunsuke; Feng, Qi

    2016-08-01

    Perovskite solar cells (PSCs) often suffer from large performance variations which impede to define a clear charge-transfer mechanism. Ferroelectric polarization is measured numerically using CH3NH3PbI3 (M A PbI3 ) pellets to overcome the measurement issues such as pinholes and low uniformity of thickness, etc., with M A PbI3 thin films. M A PbI3 perovskite is an antiferroelectric semiconductor which is different from typical semiconducting materials and ferroelectric materials. The effect of polarization carrier separation on the charge-transfer mechanism in the PSCs is elucidated by using the results of ferroelectric and structural studies on the perovskite. The ferroelectric polarization contributes to an inherent carrier-separation effect and the I - V hysteresis. The ferroelectric and semiconducting synergistic charge-separation effect gives an alternative category of solar cells, ferroelectric semiconductor solar cells. Our findings identify the ferroelectric semiconducting behavior of the perovskite absorber as being significant to the improvement of the ferroelectric PSCs performances in future developments.

  9. Dielectric properties of ferroelectric betaine phosphite crystals with a high degree of deuteration

    NASA Astrophysics Data System (ADS)

    Balashova, E. V.; Krichevtsov, B. B.; Yurko, E. I.; Svinarev, F. B.; Pankova, G. A.

    2015-12-01

    The dielectric properties of deuterated betaine phosphite crystals with a high degree of deuteration in the region of the antiferrodistorsive (at T = T c1) and ferroelectric (at T = T c2) phase transitions have been investigated. The temperature behavior of the dielectric permittivity of betaine phosphite and deuterated betaine phosphite has been described within the framework of the Landau thermodynamic model taking into account the biquadratic coupling between the polar order parameter of the ferroelectric transition and the nonpolar order parameter of the antiferrodistorsive phase transition. It has been shown that an increase in the degree of deuteration leads to a decrease in the coupling between the order parameters. An increase in the temperature of the ferroelectric phase transition due to the deuteration of betaine phosphite is caused by an increase in the dielectric permittivity in the symmetric phase above the temperature of the antiferrodistorsive phase transition.

  10. Universal Ferroelectric Switching Dynamics of Vinylidene Fluoride-trifluoroethylene Copolymer Films

    PubMed Central

    Hu, Wei Jin; Juo, Deng-Ming; You, Lu; Wang, Junling; Chen, Yi-Chun; Chu, Ying-Hao; Wu, Tom

    2014-01-01

    In this work, switching dynamics of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer films are investigated over unprecedentedly wide ranges of temperature and electric field. Remarkably, domain switching of copolymer films obeys well the classical domain nucleation and growth model although the origin of ferroelectricity in organic ferroelectric materials inherently differs from the inorganic counterparts. A lower coercivity limit of 50 MV/m and 180° domain wall energy of 60 mJ/m2 are determined for P(VDF-TrFE) films. Furthermore, we discover in copolymer films an anomalous temperature-dependent crossover behavior between two power-law scaling regimes of frequency-dependent coercivity, which is attributed to the transition between flow and creep motions of domain walls. Our observations shed new light on the switching dynamics of semi-crystalline ferroelectric polymers, and such understandings are critical for realizing their reliable applications. PMID:24759786

  11. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    SciTech Connect

    Kalinin, Sergei V; Rodriguez, Brian J; Jesse, Stephen; Karapetian, Edgar; Mirman, B; Eliseev, E. A.; Morozovska, A. N.

    2007-01-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  12. Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

    2011-01-01

    In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

  13. Dielectric studies in gold nanoparticles doped ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Jayoti, Divya; Malik, Praveen; Singh, Arshdeep

    2016-05-01

    Citrate buffer stabilized gold nano particles (GNPs) were doped into a ferroelectric liquid crystal (FLC). Dielectric relaxation spectroscopy was carried out in the range 20Hz-10MHz. The behavior of permittivity was analyzed as a function of frequency and temperature. It was observed that adding a small amount of GNPs, the permittivity changes significantly by almost three times as compared to the pure FLC. Goldstone mode of relaxation was observed both in pristine and GNPs doped FLC. The relaxation frequency of this mode shifted to 80Hz and in case of pristine FLC, the frequency was observed to be 250Hz.

  14. Electric-field influence on the neutron diffuse scattering near the ferroelectric transition of Sr0.61Ba0.39Nb2O6

    NASA Astrophysics Data System (ADS)

    Ondrejkovic, Petr; Kempa, Martin; Savinov, Maxim; Bednyakov, Petr; Kulda, Jiri; Bourges, Philippe; Dec, Jan; Hlinka, Jirka

    2016-08-01

    Uniaxial relaxor ferroelectric Sr0.61Ba0.39Nb2O6 single crystal has been investigated in the vicinity of its phase transition using neutron scattering and dielectric spectroscopy. A global-type thermal hysteresis is evidenced by both techniques in the ferroelectric phase and up to about 15 K above Tc. In addition, a part of the transverse neutron diffuse scattering in the 001 Brillouin zone, presumably related to static nanodomain structure, can be suppressed by prior poling the crystal in electric field of 3 kV/cm. The remaining part of the transverse neutron diffuse scattering and the real part of permittivity show a similar temperature dependence. The temperature position of the maximal scattering intensity Tmax depends significantly on the scattering wave vector. Tmax shifts monotonically to higher temperature with the increasing wave vector in all investigated cooling and heating regimes. It is concluded that the critical fluctuations have space correlations which depend on frequency and wave vector.

  15. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  16. Interface control of bulk ferroelectric polarization

    SciTech Connect

    Yu, P; Luo, Weidong; Yi, D.; Zhang, J.-X.; Rossell, M.D.; Yang, C.-H.; You, L.; Singh-Bhalla, G. B.; Yang, S.Y; He, Q; Ramasse, Q. M.; Erni, R.; Martin, L. W.; Chu, Y. H.; Pantelides, Sokrates T; Pennycook, Stephen J; Ramesh, R.

    2012-01-01

    The control of material interfaces at the atomic level has led to no- vel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we em- ploy a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite un- derlayers extends the generality of this phenomenon.

  17. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk’Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric–dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  18. Processing of patterned ferroelectric capacitors

    NASA Astrophysics Data System (ADS)

    Rod, Bernard J.

    1992-09-01

    Processing steps are described in detail for a procedure to fabricate sol-gel-derived lead-zirconate-titanate (PZT) ferroelectric thin-film capacitors in a manner compatible with processed complementary metal-oxide-semiconductor (CMOS) integrated-circuit wafers. The intended purpose of this work is to fabricate nonvolatile-element memory test structures for electrical and radiation characterization studies. A number of critical processing issues dealing with the etching of the PZT films and the deposition and definition of the top and bottom platinum electrodes were addressed and suitable solutions found during the course of this work. Using the procedures described herein, we fabricated working PZT capacitors and evaluated them electrically.

  19. Direct Observation of Ferroelectric Domains in Solution-Processed CH3NH3PbI3 Perovskite Thin Films.

    PubMed

    Kutes, Yasemin; Ye, Linghan; Zhou, Yuanyuan; Pang, Shuping; Huey, Bryan D; Padture, Nitin P

    2014-10-01

    A new generation of solid-state photovoltaics is being made possible by the use of organometal-trihalide perovskite materials. While some of these materials are expected to be ferroelectric, almost nothing is known about their ferroelectric properties experimentally. Using piezoforce microscopy (PFM), here we show unambiguously, for the first time, the presence of ferroelectric domains in high-quality β-CH3NH3PbI3 perovskite thin films that have been synthesized using a new solution-processing method. The size of the ferroelectric domains is found to be about the size of the grains (∼100 nm). We also present evidence for the reversible switching of the ferroelectric domains by poling with DC biases. This suggests the importance of further PFM investigations into the local ferroelectric behavior of hybrid perovskites, in particular in situ photoeffects. Such investigations could contribute toward the basic understanding of photovoltaic mechanisms in perovskite-based solar cells, which is essential for the further enhancement of the performance of these promising photovoltaics.

  20. Characterization, Modeling, and Energy Harvesting of Phase Transformations in Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Dong, Wenda

    Solid state phase transformations can be induced through mechanical, electrical, and thermal loading in ferroelectric materials that are compositionally close to morphotropic phase boundaries. Large changes in strain, polarization, compliance, permittivity, and coupling properties are typically observed across the phase transformation regions and are phenomena of interest for energy harvesting and transduction applications where increased coupling behavior is desired. This work characterized and modeled solid state phase transformations in ferroelectric materials and assessed the potential of phase transforming materials for energy harvesting applications. Two types of phase transformations were studied. The first type was ferroelectric rhombohedral to ferroelectric orthorhombic observed in lead indium niobate lead magnesium niobate lead titanate (PIN-PMN-PT) and driven by deviatoric stress, temperature, and electric field. The second type of phase transformation is ferroelectric to antiferroelectric observed in lead zirconate titanate (PZT) and driven by pressure, temperature, and electric field. Experimental characterizations of the phase transformations were conducted in both PIN-PMN-PT and PZT in order to understand the thermodynamic characteristics of the phase transformations and map out the phase stability of both materials. The ferroelectric materials were characterized under combinations of stress, electric field, and temperature. Material models of phase transforming materials were developed using a thermodynamic based variant switching technique and thermodynamic observations of the phase transformations. These models replicate the phase transformation behavior of PIN-PMN-PT and PZT under mechanical and electrical loading conditions. The switching model worked in conjunction with linear piezoelectric equations as ferroelectric/ferroelastic constitutive equations within a finite element framework that solved the mechanical and electrical field equations

  1. Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

    NASA Astrophysics Data System (ADS)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF-TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization-electric field loop and piezoelectricity in the P(VDF-TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF-TrFE) layer.

  2. Investigation of the relaxor behavior of sol gel processed lanthanum lead titanium ceramics

    NASA Astrophysics Data System (ADS)

    Limame, K.; Sayouri, S.; Yahyaoui, M. M.; Housni, A.; Jaber, B.

    2016-08-01

    A series of La doped lead titanate samples, with composition Pb1-xLaxTi1-x/4O3 (PLTx), where x=0.00; 0.02; 0.04; 0.06; 0.07; 0.08; 0.10; 0.12; 0.14; 0.16; 0.18; 0.21 and 0.22 was prepared using the sol-gel process. Addition of La gives rise to the two well-known phenomena: diffuseness and relaxation around the ferro-to-paraelectric transition; the two parameters related to these phenomena, and which give a satisfactory interpretation of them, have been estimated using the Uchino's quadratic law. This diffuse phase transition (DPT) has been investigated with the help of the Landau-Devonshire cluster theory and the model of Cheng et al., to show that polar regions may be generated around the DPT and far from the temperature, Tm, of the maximum of the dielectric permittivity, which have as a direct consequence a non vanishing polarization even if T>Tm.

  3. Ferroelectric-ferromagnetic multilayers: A magnetoelectric heterostructure with high output charge signal

    SciTech Connect

    Prokhorenko, S.; Kohlstedt, H.; Pertsev, N. A.

    2014-09-21

    Multiferroic composites and heterostructures comprising ferroelectric and ferromagnetic materials exhibit room-temperature magnetoelectric (ME) effects greatly exceeding those of single-phase magnetoelectrics known to date. Since these effects are mediated by the interfacial coupling between ferroic constituents, the ME responses may be enhanced by increasing the density of interfaces and improving their quality. A promising material system providing these features is a ferroelectric-ferromagnetic multilayer with epitaxial interfaces. In this paper, we describe theoretically the strain-mediated direct ME effect exhibited by free-standing multilayers composed of single-crystalline ferroelectric nanolayers interleaved by conducting ferromagnetic slabs. Using a nonlinear thermodynamic approach allowing for specific mechanical boundary conditions of the problem, we first calculate the polarization states and dielectric properties of ferroelectric nanolayers in dependence on the lattice mismatch between ferroic constituents and their volume fractions. In these calculations, the ferromagnetic component is described by a model which combines linear elastic behavior with magnetic-field-dependent lattice parameters. Then the quasistatic ME polarization and voltage coefficients are evaluated using the theoretical strain sensitivity of ferroelectric polarization and measured effective piezomagnetic coefficients of ferromagnets. For Pb(Zr₀.₅Ti₀.₅)O₃-FeGaB and BaTiO₃-FeGaB multilayers, the ME coefficients are calculated numerically as a function of the FeGaB volume fraction and used to evaluate the output charge and voltage signals. It is shown that the multilayer geometry of a ferroelectric-ferromagnetic nanocomposite opens the way for a drastic enhancement of the output charge signal. This feature makes biferroic multilayers advantageous for the development of ultrasensitive magnetic-field sensors for technical and biomedical applications.

  4. Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

    DOE PAGESBeta

    Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan; Jones, Jacob L.; Maria, Jon-Paul; Trolier-McKinstry, Susan

    2016-07-05

    Ferroelectric materials are well-suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro-optic devices, and non-volatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a non-centrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change of properties withmore » decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, while in bulk ceramics, changes in properties from the values of large-grained specimens is most notable in samples with grain sizes below several microns. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics are reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. Ultimately, in many cases, multiple mechanisms combine to produce the observed scaling

  5. Ferroelectricity induced by ordering of twisting motion in a molecular rotor.

    PubMed

    Zhang, Yi; Zhang, Wen; Li, Shen-Hui; Ye, Qiong; Cai, Hong-Ling; Deng, Feng; Xiong, Ren-Gen; Huang, Songping D

    2012-07-01

    A novel mononuclear metal-organic compound, [Cu(Hdabco)(H(2)O)Cl(3)] (1, dabco = 1,4-diazabicyclo[2.2.2]octane) in which the Cu(II) cation adopts a slightly distorted bipyramidal geometry where the three Cl anions constitute the equatorial plane and the Hdabco cation and H(2)O molecule occupy the two axial positions, was synthesized. Its paraelectric-to-ferroelectric phase transition at 235 K (T(c)) and dynamic behaviors were characterized by single crystal X-ray diffraction analysis, thermal analysis, dielectric and ferroelectric measurements, second harmonic generation experiments, and solid-state nuclear magnetic resonance measurements. Compound 1 behaves as a molecular rotor above room temperature in which the (Hdabco) part rotates around the N···N axis as a rotator and the [Cu(H(2)O)Cl(3)] part acts as a stator. In the temperature range 235-301 K, a twisting motion of the rotator is confirmed. Below the T(c), the motions of the rotor are frozen and the molecules become ordered, corresponding to a ferroelectric phase. Origin of the ferroelectricity was ascribed to relative movements of the anions and cations from the equilibrium position, which is induced by the order-disorder transformation of the twisting motion of the molecule between the ferroelectric and paraelectric phases. Study of the deuterated analogue [Cu(Ddabco)(D(2)O)Cl(3)] (2) excludes the possibility of proton ordering as the origin of the ferroelectricity in 1.

  6. Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure

    NASA Astrophysics Data System (ADS)

    Hu, Zhongqiang; Li, Qian; Li, Meiya; Wang, Qiangwen; Zhu, Yongdan; Liu, Xiaolian; Zhao, Xingzhong; Liu, Yun; Dong, Shuxiang

    2013-03-01

    We report a continuously tunable resistive switching behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterostructure for ferroelectric memristor application. The resistance of this memristor can be tuned up to 5 × 105% by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The observed memristive behavior is attributed to the modulation effect of the ferroelectric polarization reversal on the width of depletion region and the height of potential barrier of the p-n junction formed at the BiFeO3/Nb-doped SrTiO3 interface.

  7. Ferroelectric and ferromagnetic properties in BaTiO{sub 3} thin films on Si (100)

    SciTech Connect

    Singamaneni, Srinivasa Rao Prater, John T.; Punugupati, Sandhyarani; Hunte, Frank; Narayan, Jagdish

    2014-09-07

    In this paper, we report on the epitaxial integration of room temperature lead-free ferroelectric BaTiO{sub 3} thin (∼1050 nm) films on Si (100) substrates by pulsed laser deposition technique through a domain matching epitaxy paradigm. We employed MgO and TiN as buffer layers to create BaTiO{sub 3}/SrRuO{sub 3}/MgO/TiN/Si (100) heterostructures. C-axis oriented and cube-on-cube epitaxial BaTiO{sub 3} is formed on Si (100) as evidenced by the in-plane and out-of-plane x-ray diffraction, and transmission electron microscopy. X-ray photoemission spectroscopic measurements show that Ti is in 4(+) state. Polarization hysteresis measurements together with Raman spectroscopy and temperature-dependent x-ray diffraction confirm the room temperature ferroelectric nature of BaTiO{sub 3}. Furthermore, laser irradiation of BaTiO{sub 3} thin film is found to induce ferromagnetic-like behavior but affects adversely the ferroelectric characteristics. Laser irradiation induced ferromagnetic properties seem to originate from the creation of oxygen vacancies, whereas the pristine BaTiO{sub 3} shows diamagnetic behavior, as expected. This work has opened up the route for the integration of room temperature lead-free ferroelectric functional oxides on a silicon platform.

  8. Pure ferroelectric polarization of lead-free Na0.5K0.5NbO3 thin films by using the double wave method

    NASA Astrophysics Data System (ADS)

    Lee, Hai Joon; Ahn, Chang Won; Won, Sung Sik; Tange, Achiri; Park, Bong Chan; Seog, Hae Jin; Kim, Ill Won

    2015-05-01

    Na0.5K0.5NbO3 (NKN) thin films were grown on Pt(111)/Ti/SiO2/Si substrates by using RFmagnetron sputtering. We investigated the behavior of the ferroelectric polarization. Well-saturated P-V hysteresis loops were observed, but the P-V hysteresis loops were sometimes distorted and consisted of three roughly parallel components, such as ferroelectric, dielectric and conductive components. Correction methods were proposed to identify the undesirable components and the pure ferroelectric polarization components from the observed P-V hysteresis loops. A new polarization hysteresis loop measurement technique, the double wave method (DWM), was applied to NKN thin films to obtain pure ferroelectric polarization and elucidate the behaviors of the polarization components.

  9. Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1995-01-01

    Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

  10. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    SciTech Connect

    Awan, Saif Ullah E-mail: ullahphy@gmail.com; Hasanain, S. K.; Anjum, D. H.; Awan, M. S.; Shah, Saqlain A.

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn{sub 1−y}Li{sub y}O(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4 × 10{sup 17}/cc to 7.3 × 10{sup 17}/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5 kV/cm (0.11 μC/cm{sup 2}) and 2.8 kV/cm (0.15 μC/cm{sup 2}) for y = 0.08 and y = 0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3 × 10{sup 17}/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  11. PREFACE: 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity and 9th International Conference on Functional Materials and Nanotechnologies (RCBJSF-2014-FM&NT)

    NASA Astrophysics Data System (ADS)

    Sternberg, Andris; Grinberga, Liga; Sarakovskis, Anatolijs; Rutkis, Martins

    2015-03-01

    The joint International Symposium RCBJSF-2014-FM&NT successfully has united two international events - 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity (RCBJSF-12) and 9th International Conference Functional Materials and Nanotechnologies (FM&NT-2014). The RCBJSF symposium is a continuation of series of meetings on ferroelectricity, the first of which took place in Novosibirsk (USSR) in 1976. FM&NT conferences started in 2006 and have been organized by Institute of Solid State Physics, University of Latvia in Riga. In 2012 the International program committee decided to transform this conference into a traveling Baltic State conference and the FM&NT-2013 was organized by the Institute of Physics, University of Tartu, Estonia. In 2014 the joint international symposium RCBJSF-2014-FM&NT was organized by the Institute of Solid State Physics, University of Latvia and was part of Riga - 2014, the European Capital of Culture event. The purpose of the joint Symposium was to bring together scientists, students and high-level experts in solid state physics, materials science, engineering and related disciplines. The number of the registered participants from 26 countries was over 350. During the Symposium 128 high quality scientific talks (5 plenary, 42 invited, 81 oral) and over 215 posters were presented. All presentations were divided into 4 parallel sessions according to 4 main topics of the Symposium: Ferroelectricity, including ferroelectrics and multiferroics, pyroelectrics, piezoelectrics and actuators, integrated ferroelectrics, relaxors, phase transitions and critical phenomena. Multifunctional Materials, including theory, multiscale and multiphenomenal material modeling and simulation, advanced inorganic, organic and hybrid materials. Nanotechnologies, including progressive methods, technologies and design for production, investigation of nano- particles, composites, structures, thin films and coatings. Energy, including perspective materials and

  12. Nanoscale phenomena in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Ganpule, Chandan S.

    Ferroelectric materials are a subject of intense research as potential candidates for applications in non-volatile ferroelectric random access memories (FeRAM), piezoelectric actuators, infrared detectors, optical switches and as high dielectric constant materials for dynamic random access memories (DRAMs). With current trends in miniaturization, it becomes important that the fundamental aspects of scaling of ferroelectric and piezoelectric properties in these devices be studied thoroughly and their impact on the device reliability assessed. In keeping with this spirit of miniaturization, the dissertation has two broad themes: (a) Scaling of ferroelectric and piezoelectric properties and (b) The key reliability issue of retention loss. The thesis begins with a look at results on scaling studies of focused-ion-beam milled submicron ferroelectric capacitors using a variety of scanning probe characterization tools. The technique of piezoresponse microscopy, which is rapidly becoming an accepted form of domain imaging in ferroelectrics, has been used in this work for another very important application: providing reliable, repeatable and quantitative numbers for the electromechanical properties of submicron structures milled in ferroelectric films. This marriage of FIB and SPM based characterization of electromechanical and electrical properties has proven unbeatable in the last few years to characterize nanostructures qualitatively and quantitatively. The second half of this dissertation focuses on polarization relaxation in FeRAMs. In an attempt to understand the nanoscale origins of back-switching of ferroelectric domains, the time dependent relaxation of remnant polarization in epitaxial lead zirconate titanate (PbZr0.2Ti0.8O 3, PZT) ferroelectric thin films (used as a model system), containing a uniform 2-dimensional grid of 90° domains (c-axis in the plane of the film) has been examined using voltage modulated scanning force microscopy. A novel approach of

  13. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-01

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

  14. Enhanced energy harvesting in commercial ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Patel, Satyanarayan; Chauhan, Aditya; Vaish, Rahul

    2014-04-01

    Ferroelectric materials are used in a number of applications ranging from simple sensors and actuators to ferroelectric random access memories (FRAMs), transducers, health monitoring system and microelectronics. The multiphysical coupling ability possessed by these materials has been established to be useful for energy harvesting applications. However, conventional energy harvesting techniques employing ferroelectric materials possess low energy density. This has prevented the successful commercialization of ferroelectric based energy harvesting systems. In this context, the present study aims at proposing a novel approach for enhanced energy harvesting using commercially available ferroelectric materials. This technique was simulated to be used for two commercially available piezoelectric materials namely PKI-552 and APCI-840, soft and hard lead-zirconate-titanate (PZT) pervoskite ceramics, respectively. It was observed that a maximum energy density of 348 kJm-3cycle-1 can be obtained for cycle parameters of (0-1 ton compressive stress and 1-25 kV.cm-1 electric field) using APCI-840. The reported energy density is several hundred times larger than the maximum energy density reported in the literature for vibration harvesting systems.

  15. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-01

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics. PMID:26814668

  16. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  17. Deaging and Asymmetric Energy Landscapes in Electrically Biased Ferroelectrics

    SciTech Connect

    Tutuncu, Goknur; Damjanovic, Dragan; Chen, Jun; Jones, Jacob L.

    2015-09-01

    In ferroic materials, the dielectric, piezoelectric, magnetic, and elastic coefficients are significantly affected by the motion of domain walls. This motion can be described as the propagation of a wall across various types and strengths of pinning centers that collectively constitute a force profile or energetic landscape. Biased domain structures and asymmetric energy landscapes can be created through application of high fields (such as during electrical poling), and the material behavior in such states is often highly asymmetric. In some cases, this behavior can be considered as the electric analogue to the Bauschinger effect. The present Letter uses time-resolved, high-energy x-ray Bragg scattering to probe this asymmetry and the associated deaging effect in the ferroelectric morphotropic phase boundary composition 0.36BiScO{sub 3}-0.64PbTiO{sub 3}.

  18. Electrostatic micromotor based on ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Baginsky, I. L.; Kostsov, E. G.

    2004-11-01

    A new electrostatic micromotor is described that utilizes the electromechanical energy conversion principle earlier described by the authors. The electromechanical energy conversion is based on reversible electrostatic rolling of thin metallic films (petals) on a ferroelectric surface. The motor's active media are layers of ferroelectric ceramics (about 100 µm in thickness). The characteristics of the electrostatic rolling of the petals on different ceramic surfaces are studied, as well as the dynamic characteristics of the micromotors. It is shown that the use of antiferroelectric material allows one to reach a specific energy capacitance comparable to that of the micromotors based on ferroelectric films and to achieve a specific power of 30-300 µW mm-2.

  19. Negative differential conductivity in thin ferroelectric films

    NASA Astrophysics Data System (ADS)

    Podgorny, Yury; Vorotilov, Konstantin; Sigov, Alexander

    2014-11-01

    A phenomenon of negative differential conductivity in ferroelectric thin films is discussed. We proposed that the reason is polarization recovery current arising at current-voltage I(V) measurements as a result of polarization relaxation after pre-polarization of ferroelectric film. Simulation of this current by Weibull distribution provides a good correlation with the experimental data. The obtained values of the recovered polarization Prec and the field strength Erec at which the recovery polarization current reaches maximum do not depend on the voltage sweep rate and are well correlated with the values of polarization relaxation Prel and coercive field strength Ec obtained from dielectric hysteresis loop. It is shown that the current density due to polarization recovery Jrec may exceed by about an order the ohmic current density JΩ in ferroelectric film at Ec.

  20. Short range magnetic exchange interaction favors ferroelectricity.

    PubMed

    Wan, Xiangang; Ding, Hang-Chen; Savrasov, Sergey Y; Duan, Chun-Gang

    2016-01-01

    Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science. To search multiferroics, currently most researches are focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced ferroelectricity under a biaxial strain. In addition, we show that such mechanism also exists in the most important single phase multiferroics, i.e. BiFeO3, suggesting that this mechanism is ubiquitous in systems with superexchange interaction. PMID:26956480

  1. Investigation of polycrystalline ferroelectric tunnel junction

    NASA Astrophysics Data System (ADS)

    Hou, Pengfei; Wang, Jinbin; Zhong, Xiangli

    2016-07-01

    Ferroelectric tunnel junction (FTJ) is a breakthrough for addressing the nondestructive read in the ferroelectric random access memories. However, FTJs with nearly ideal characteristics have only been demonstrated on perovskite heterostructures that are deposited on closely lattice-matched and non-silicon substrates, or silicon substrates with epitaxial multilayer. In order to promote the application of FTJs, we develop a polycrystalline FTJ with ultrathin bottom electrode, in which the resistance variations exceed two orders of magnitude. And we achieve two stable logic states written and read easily using voltage pulses. Especially the device integrates with the silicon technology in modern microelectronics. Our results suggest new opportunities for ferroelectrics as nonvolatile resistive switching memory.

  2. Structural stability and depolarization of manganese-doped (Bi0.5Na0.5)1-xBaxTiO3 relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, Sheng-Fen; Tu, Chi-Shun; Chang, Ting-Lun; Chen, Pin-Yi; Chen, Cheng-Sao; Hugo Schmidt, V.; Anthoniappen, J.

    2014-10-01

    This work reveals that 0.5 mol. % manganese (Mn) doping in (Bi0.5Na0.5)1-xBaxTiO3 (x = 0 and 0.075) solid solutions can increase structural thermal stability, depolarization temperature (Td), piezoelectric coefficient (d33), and electromechanical coupling factor (kt). High-resolution X-ray diffraction and transmission electron microscopy reveal coexistence of rhombohedral (R) R3c and tetragonal (T) P4bm phases in (Bi0.5Na0.5)0.925Ba0.075TiO3 (BN7.5BT) and 0.5 mol. % Mn-doped BN7.5BT (BN7.5BT-0.5Mn). (Bi0.5Na0.5)TiO3 (BNT) and BN7.5BT show an R - R + T phase transition, which does not occur in 0.5 mol. % Mn-doped BNT (BNT-0.5Mn) and BN7.5BT-0.5Mn. Dielectric permittivity (ɛ') follows the Curie-Weiss equation, ɛ' = C/(T - To), above the Burns temperature (TB), below which polar nanoregions begin to develop. The direct piezoelectric coefficient (d33) and electromechanical coupling factor (kt) of BN7.5BT-0.5Mn reach 190 pC/N and 47%.

  3. Structural stability and depolarization of manganese-doped (Bi₀.₅Na₀.₅){sub 1−x}Ba{sub x}TiO₃ relaxor ferroelectrics

    SciTech Connect

    Wang, Sheng-Fen; Tu, Chi-Shun; Chang, Ting-Lun; Chen, Pin-Yi; Chen, Cheng-Sao; Hugo Schmidt, V.; Anthoniappen, J.

    2014-10-21

    This work reveals that 0.5 mol. % manganese (Mn) doping in (Bi₀.₅Na₀.₅){sub 1−x}Ba{sub x}TiO₃ (x = 0 and 0.075) solid solutions can increase structural thermal stability, depolarization temperature (T{sub d}), piezoelectric coefficient (d₃₃), and electromechanical coupling factor (kₜ). High-resolution X-ray diffraction and transmission electron microscopy reveal coexistence of rhombohedral (R) R3c and tetragonal (T) P4bm phases in (Bi₀.₅Na₀.₅)₀.₉₂₅Ba₀.₀₇₅TiO₃ (BN7.5BT) and 0.5 mol. % Mn-doped BN7.5BT (BN7.5BT-0.5Mn). (Bi₀.₅Na₀.₅)TiO₃ (BNT) and BN7.5BT show an R − R + T phase transition, which does not occur in 0.5 mol. % Mn-doped BNT (BNT-0.5Mn) and BN7.5BT-0.5Mn. Dielectric permittivity (ε′) follows the Curie-Weiss equation, ε′ = C/(T − T{sub o}), above the Burns temperature (TB), below which polar nanoregions begin to develop. The direct piezoelectric coefficient (d₃₃) and electromechanical coupling factor (kₜ) of BN7.5BT-0.5Mn reach 190 pC/N and 47%.

  4. Dynamical mechanism of phase transitions in A-site ferroelectric relaxor (Na1/2Bi1/2)TiO3

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; Danilkin, Sergey; Zhang, Haiwu; Imperia, Paolo; Li, Xiaobing; Zhao, Xiangyong; Luo, Haosu

    2014-10-01

    The dynamical phase transition mechanism of (Na1/2Bi1/2)TiO3 (NBT) was studied using inelastic neutron scattering. Softening was observed of multiple phonon modes in the phase transition sequence of NBT. As usual, the softening of the zone center transverse optical modes Δ5 and Σ3 was observed in the (200) and (220) zones, showing the Ti vibration instabilities in TiO6 octahedra for both cubic-tetragonal (C-T) and tetragonal-rhombohedral (T-R) phase transitions. In these two phase transitions, however, Ti4+ has different preferential displacement directions. Surprisingly, the longitudinal optic mode also softens significantly toward the zone center in the range of the transition temperature, indicating the Na+/Bi3+ vibration instability against TiO6 octahedra during the T-R phase transition. Strong inelastic diffuse scattering shows up near M(1.5, 0.5, 0) and R(1.5, 1.5, 0.5) in the tetragonal and rhombohedral phases, respectively, indicating the condensations of the M3 and R25 optic modes for the corresponding transitions. This reveals the different rotation instabilities of TiO6 in the corresponding transition temperature range. Bottleneck or waterfall features were observed in the dispersion curves at certain temperatures but did not show close correlations to the formation of polar nanoregions. Additional instabilities could be the origin of the complexity of phase transitions and crystallographic structures in NBT.

  5. Piezoelectricity and ferroelectricity of cellular polypropylene electrets films characterized by piezoresponse force microscopy

    SciTech Connect

    Miao, Hongchen; Sun, Yao; Zhou, Xilong; Li, Yingwei; Li, Faxin

    2014-08-14

    Cellular electrets polymer is a new ferroelectret material exhibiting large piezoelectricity and has attracted considerable attentions in researches and industries. Property characterization is very important for this material and current investigations are mostly on macroscopic properties. In this work, we conduct nanoscale piezoelectric and ferroelectric characterizations of cellular polypropylene (PP) films using piezoresponse force microscopy (PFM). First, both the single-frequency PFM and dual-frequency resonance-tracking PFM testings were conducted on the cellular PP film. The localized piezoelectric constant d{sub 33} is estimated to be 7–11pC/N by correcting the resonance magnification with quality factor and it is about one order lower than the macroscopic value. Next, using the switching spectroscopy PFM (SS-PFM), we studied polarization switching behavior of the cellular PP films. Results show that it exhibits the typical ferroelectric-like phase hysteresis loops and butterfly-shaped amplitude loops, which is similar to that of a poly(vinylidene fluoride) (PVDF) ferroelectric polymer film. However, both the phase and amplitude loops of the PP film are intensively asymmetric, which is thought to be caused by the nonzero remnant polarization after poling. Then, the D-E hysteresis loops of both the cellular PP film and PVDF film were measured by using the same wave form as that used in the SS-PFM, and the results show significant differences. Finally, we suggest that the ferroelectric-like behavior of cellular electrets films should be distinguished from that of typical ferroelectrics, both macroscopically and microscopically.

  6. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

    PubMed

    Schenk, Tony; Hoffmann, Michael; Ocker, Johannes; Pešić, Milan; Mikolajick, Thomas; Schroeder, Uwe

    2015-09-16

    For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a hysteresis measurement. In the present work, first-order reversal curves (FORCs) are applied to study the evolution of the switching and backswitching field distribution within the frame of the Preisach model for three different phenomena: (1) The pristine film contains two oppositely biased regions. These internal bias fields vanish during the wake-up cycling. (2) Fatigue as a decrease in the number of switchable domains is accompanied by a slight increase in the mean absolute value of the switching field. (3) The split-up effect is shown to also be related to local bias fields in a complex situation resulting from both the field cycling treatment and the measurement procedure. Moreover, the role of the wake-up phenomenon is discussed with respect to optimizing low-voltage operation conditions of ferroelectric memories toward reasonably high and stable remanent polarization and highest possible endurance.

  7. Stable ferroelectric liquid crystals derived from salicylaldimine-core.

    PubMed

    Veerabhadraswamy, Bhyranalyar N; Rao, D S Shankar; Yelamaggad, Channabasaveshwar V

    2015-03-26

    Five pairs of enantiomers derived from salicylaldimine-core have been prepared by condensing (R)- or (S)-4-(octan-2-yloxy)anilines with 4-formyl-3-hydroxyphenyl 4-(n-alkoxy)benzoates. They have been designed to probe the correlation between molecular structure and mesomorphism, and especially to provide stable mesogens having potential for applications in ferroelectric liquid crystal devices. Thus, they have been substituted with a chiral tail at one end and by n-alkoxy chains of varying length at the other terminal. A detailed study confirms an indistinguishable behavior of all ten mesogens exhibiting an enantiotropic chiral smectic C (SmC*) phase besides blue phase (BP) and chiral nematic (N*) phase. The SmC* phase occurring over a 50-70 °C thermal width shows ferroelectric switching with spontaneous polarization (Ps) value crossing over 100 nC/cm(2). Circular dichroism spectroscopic study of the mesophases confirms the chromophores of the molecules being in the macroscopic chiral (helical) environment.

  8. Complex Internal Bias Fields in Ferroelectric Hafnium Oxide.

    PubMed

    Schenk, Tony; Hoffmann, Michael; Ocker, Johannes; Pešić, Milan; Mikolajick, Thomas; Schroeder, Uwe

    2015-09-16

    For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a hysteresis measurement. In the present work, first-order reversal curves (FORCs) are applied to study the evolution of the switching and backswitching field distribution within the frame of the Preisach model for three different phenomena: (1) The pristine film contains two oppositely biased regions. These internal bias fields vanish during the wake-up cycling. (2) Fatigue as a decrease in the number of switchable domains is accompanied by a slight increase in the mean absolute value of the switching field. (3) The split-up effect is shown to also be related to local bias fields in a complex situation resulting from both the field cycling treatment and the measurement procedure. Moreover, the role of the wake-up phenomenon is discussed with respect to optimizing low-voltage operation conditions of ferroelectric memories toward reasonably high and stable remanent polarization and highest possible endurance. PMID:26308500

  9. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  10. Ferroelectric Cathodes in Transverse Magnetic Fields

    SciTech Connect

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-07-29

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode.

  11. 95 GHz Gyrotron with Ferroelectric Cathode

    NASA Astrophysics Data System (ADS)

    Einat, M.; Pilossof, M.; Ben-Moshe, R.; Hirshbein, H.; Borodin, D.

    2012-11-01

    Ferroelectric cathodes were reported as a feasible electron source for microwave tubes. However, due to the surface plasma emission characterizing this cathode, operation of millimeter wave tubes based on it remains questionable. Nevertheless, the interest in compact high power sources of millimeter waves and specifically 95 GHz is continually growing. In this experiment, a ferroelectric cathode is used as an electron source for a gyrotron with the output frequency extended up to 95 GHz. Power above a 5 kW peak and ˜0.5μs pulses are reported; a duty cycle of 10% is estimated to be achievable.

  12. CuInP2S6 Room Temperature Layered Ferroelectric

    SciTech Connect

    Belianinov, Alex; He, Qian; Dziaugys, Andrius; Maksymovych, Petro; Eliseev, Eugene; Borisevich, Albina Y.; Morozovska, Anna N.; Banys, Juras; Vysochanskii, Yulian; Kalinin, Sergei V.

    2015-05-01

    In this paper, we explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V—likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. Finally, the existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing “graphene family”.

  13. Local bias induced ferroelectricity in manganites with competing charge and orbital order states.

    PubMed

    Figueiras, Fábio G N; Bdikin, Igor K; Amaral, Vitor B S; Kholkin, Andrei L

    2014-03-14

    Perovskite-type manganites, such as Pr1-xCaxMnO3, La1-xCaxMnO3 and La1-xSrxMnO3 solid solutions, are set forth as a case study of ferroelectricity formation mechanisms associated with the appearance of site- and bond-centered orbital ordering which breaks structural inversion symmetry. Even though the observation of macroscopic ferroelectricity may be hindered by the finite conductivity of manganites, polarization can still exist in nanoscale volumes. We use Piezoresponse Force Microscopy to probe local bias induced modifications of electrical and electromechanical properties at the manganite surface. Clear bias-induced piezocontrast and local hysteresis loops are observed for La0.89Sr0.11MnO3 and Pr0.60Ca0.40MnO3 compounds providing convincing evidence of the existence of locally induced polar states well above the transition temperature of the CO phase, while the reference samples without CO behavior show no ferroelectric-like response. Such coexistence of ferroelectricity and magnetism in manganites due to the charge ordering (CO) under locally applied electric field opens up a new pathway to expand the phase diagrams of such systems and to achieve spatially localized multiferroic effects with a potential to be used in a new generation of memory cells and data processing circuits. PMID:24477353

  14. Enhanced charge separation in organic photovoltaic films doped with ferroelectric dipoles

    SciTech Connect

    Nalwa, Kanwar; Carr, John; Mahadevapuram, Rakesh; Kodali, Hari; Bose, Sayantan; Chen, Yuqing; Petrich, Jacob; Ganapathysubramanian, Baskar; Chaudhary, Sumit

    2012-02-23

    A key requirement for realizing efficient organic photovoltaic (OPV) cells is the dissociation of photogenerated electron-hole pairs (singlet-excitons) in the donor polymer, and charge-transfer-excitons at the donor–acceptor interface. However, in modern OPVs, these excitons are typically not sufficiently harnessed due to their high binding energy. Here, we show that doping the OPV active-layers with a ferroelectric polymer leads to localized enhancements of electric field, which in turn leads to more efficient dissociation of singlet-excitons and charge-transfer-excitons. Bulk-heterojunction OPVs based on poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester are fabricated. Upon incorporating a ferroelectric polymer as additive in the active-layer, power conversion efficiencies increase by nearly 50%, and internal quantum efficiencies approach 100% – indicating complete exciton dissociation at certain photon energies. Similar enhancements in bilayer-heterojunctions, and direct influence of ferroelectric poling on device behavior show that improved dissociation is due to ferroelectric dipoles rather than any morphological change. Enhanced singlet-exciton dissociation is also revealed by photoluminescence lifetime measurements, and predicted by simulations using a numerical device model.

  15. Ab initio approach to structural, electronic, and ferroelectric properties of antimony sulphoiodide

    NASA Astrophysics Data System (ADS)

    Amoroso, Danila; Picozzi, Silvia

    2016-06-01

    By means of first-principles calculations for the SbSI semiconductor, we show that bare density functional theory fails to reproduce the experimentally observed ferroelectric phase, whereas a more advanced approach, based on hybrid functionals, correctly works. When comparing the paraelectric and ferroelectric phases, our results show polar displacements along the c direction of the Sb and S sublattices with respect to the iodine framework, leading to a predicted spontaneous polarization of P ≃20 μ C/cm2 , in good agreement with experiments. In the ferroelectric phase, the semiconducting behavior of SbSI is confirmed by relatively large values for the indirect and direct gaps (≃2.15 eV and 2.3 eV , respectively). An analysis of the electronic structure, in terms of density of states, charge density distribution, and anomalies in the Born effective charges, reveals (i) the clear presence of a Sb(III) lone pair and (ii) a large covalency in the SbSI bonding, based on the hybridization between Sb and S ions, in turn more ionically bonded to iodine anions. Finally, the interplay between ferroelectricity and spin-orbit coupling reveals a coexistence of Dresselhaus and Rashba relativistic effects and a spin texture that can be reversed by switching the polarization, of potential appeal in electrically controlled spintronics.

  16. CuInP2S6 Room Temperature Layered Ferroelectric

    DOE PAGESBeta

    Belianinov, Alex; He, Qian; Dziaugys, Andrius; Maksymovych, Petro; Eliseev, Eugene; Borisevich, Albina Y.; Morozovska, Anna N.; Banys, Juras; Vysochanskii, Yulian; Kalinin, Sergei V.

    2015-05-01

    In this paper, we explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces,more » whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V—likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. Finally, the existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing “graphene family”.« less

  17. Static ferroelectric memory transistor having improved data retention

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.

    1996-01-01

    An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

  18. First-principles study of interface doping in ferroelectric junctions.

    PubMed

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-04-11

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)(-) monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)(+) inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions.

  19. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  20. First-principles study of interface doping in ferroelectric junctions

    PubMed Central

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-01-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)− monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions. PMID:27063704

  1. Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd, C.; Ho, Fat Duen

    2006-01-01

    All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

  2. Monoclinic Cc-phase stabilization in magnetically diluted lead free Na1/2Bi1/2TiO3—Evolution of spin glass like behavior with enhanced ferroelectric and dielectric properties

    NASA Astrophysics Data System (ADS)

    Thangavelu, Karthik; Asthana, Saket

    2015-09-01

    The effect of magnetic cation substitution on the phase stabilization, ferroelectric, dielectric and magnetic properties of a lead free Na0.5Bi0.5TiO3 (NBT) system prepared by O2 atmosphere solid state sintering were studied extensively. Cobalt (Co) was chosen as the magnetic cation to substitute at the Ti-site of NBT with optimized 2.5 mol%. Rietveld analysis of x-ray diffraction data favours the monoclinic Cc phase stabilization strongly rather than the parent R3c phase. FE-SEM micrograph supports the single phase characteristics without phase segregation at the grain boundaries. The stabilized Cc space group was explained based on the collective local distortion effects due to spin-orbit stabilization at Co3+ and Co2+ functional centres. The phonon mode changes as observed in the TiO6 octahedral modes also support the Cc phase stabilization. The major Co3+-ion presence was revealed from corresponding crystal field transitions observed through solid state diffuse reflectance spectroscopy. The enhanced spontaneous polarization (Ps) from ≅38 μC cm-2 to 45 μC cm-2 could be due to the easy rotation of polarization vector along the {(1\\bar{1}0)}{{pc}} in Cc phase. An increase in static dielectric response (ɛ) from ɛ ≅ 42 to 60 along with enhanced diffusivity from γ ≅ 1.53 to 1.75 was observed. Magneto-thermal irreversibility and their magnetic field dependent ZFC/FC curves suggest the possibility of a spin glass like behaviour below 50 K. The monoclinic Cc phase stabilization as confirmed from structural studies was well correlated with the observed ferroic properties in magnetically diluted NBT.

  3. Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes.

    PubMed

    Lu, Zengxing; Fan, Zhen; Li, Peilian; Fan, Hua; Tian, Guo; Song, Xiao; Li, Zhongwen; Zhao, Lina; Huang, Kangrong; Zhang, Fengyuan; Zhang, Zhang; Zeng, Min; Gao, Xingsen; Feng, Jiajun; Wan, Jianguo; Liu, Junming

    2016-09-14

    Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.

  4. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  5. High-frequency programmable acoustic wave device realized through ferroelectric domain engineering

    SciTech Connect

    Ivry, Yachin E-mail: cd229@eng.cam.ac.uk; Wang, Nan; Durkan, Colm E-mail: cd229@eng.cam.ac.uk

    2014-03-31

    Surface acoustic wave devices are extensively used in contemporary wireless communication devices. We used atomic force microscopy to form periodic macroscopic ferroelectric domains in sol-gel deposited lead zirconate titanate, where each ferroelectric domain is composed of many crystallites, each of which contains many microscopic ferroelastic domains. We examined the electro-acoustic characteristics of the apparatus and found a resonator behavior similar to that of an equivalent surface or bulk acoustic wave device. We show that the operational frequency of the device can be tailored by altering the periodicity of the engineered domains and demonstrate high-frequency filter behavior (>8 GHz), allowing low-cost programmable high-frequency resonators.

  6. Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Yan, Z. B.; Yau, H. M.; Li, Z. W.; Gao, X. S.; Dai, J. Y.; Liu, J.-M.

    2016-08-01

    Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.

  7. A Model for Ferroelectric Phase Shifters

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Qureshi, A. Haq

    2000-01-01

    Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

  8. Ferroelectric Devices Emit Charged Particles and Radiation

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Felsteiner, Joshua; Karsik, Yakov

    2005-01-01

    Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

  9. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites. PMID:27135419

  10. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

  11. Quantum criticality in a uniaxial organic ferroelectric

    NASA Astrophysics Data System (ADS)

    Rowley, S. E.; Hadjimichael, M.; Ali, M. N.; Durmaz, Y. C.; Lashley, J. C.; Cava, R. J.; Scott, J. F.

    2015-10-01

    Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130 K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail and was found to persist up to temperatures of at least 30-40 K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as 1/T 3close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as 1/T 2 as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipole moments in the TSCC family of crystals. Interestingly, we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally, we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields.

  12. Ferroelectric/Optoelectronic Memory/Processor

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anilkumar P.

    1992-01-01

    Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

  13. Ferroelectric control of a Mott insulator.

    PubMed

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E; Barthélémy, Agnès; Bibes, Manuel

    2013-10-03

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its "supertetragonal" phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices.

  14. Ferroelectric control of a Mott insulator

    PubMed Central

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E.; Barthélémy, Agnès; Bibes, Manuel

    2013-01-01

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices. PMID:24089020

  15. Reorientation dynamics of ferroelectric liquid-crystal molecules near the smectic-A-smectic-C* transition

    NASA Astrophysics Data System (ADS)

    O'brien, J. P.; Moses, T.; Chen, W.; Freysz, E.; Ouchi, Y.; Shen, Y. R.

    1993-04-01

    A transient optical Kerr measurement is used to study molecular reorientation about the long molecular axis of chiral and nonchiral smectic-A liquid crystals. Two relaxation components were identified, associated with individual and collective molecular motions. In contradiction with a recent report [J. R. Lalanne et al., Phys. Rev. Lett. 62, 3046 (1989); Phys. Rev. A 44, 6632 (1991)], no critical behavior of this reorientation was observed as the transition to the ferroelectric smectic-C* phase was approached.

  16. Ferroelectric-Antiferroelectric Phase Control: Interplay Between Octahedral Tilt, Polarization, and Chemistry at BFO-LSMO Interfaces

    NASA Astrophysics Data System (ADS)

    Kim, Young-Min; Yu, Pu; Chu, Ying-Hao; Pennycook, Stephen; Kalinin, Sergei; Borisevich, Albina

    2012-02-01

    Atomically-defined interfaces between complex oxides offer a paradigm of novel electronic and coupled functionalities. Here, we report the stabilization of the ferroelectric and antiferroelectric phases at the BFO-LSMO interface though termination control and reveal associated atomic-scale mechanisms with the help of aberration-corrected scanning transmission electron microscopy combined with Electron Energy Loss Spectroscopy. The BFO thin film grown on MnO2-terminated surface of LSMO exhibits stabilized ferroelectric phase at the interface. The interfacial and bulk polarization are antiparallel, giving rise to head to head ferroelectric domain wall mostly parallel to the interface. In comparison, the film grown on (Sr,La)O-terminated surface of LSMO exhibits antiferroelectric phase in the vicinity of the interface, with associated ferroelectric-antiferroelectric domain wall in the bulk. Details of tilt and polarization behavior, as well as electronic properties at the interfaces including charged domain walls and FE-AFE walls, will be presented. These results imply that the structural parameters such as octahedral tilt and ferroelectricity in BFO can be directly controlled by modifying the interface structure.

  17. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-15

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  18. Intrinsic ferroelectric switching from first principles

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.

    2016-06-01

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  19. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-16

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  20. Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature.

    SciTech Connect

    Narayanan, M.; Tong, S.; Ma, B.; Liu, S.; Balachandran, U.

    2012-01-01

    A modified Johnson model is proposed to describe the nonlinear field dependence of the dielectric constant ({var_epsilon}-E loop) in ferroelectric materials below the Curie temperature. This model describes the characteristic ferroelectric 'butterfly' shape observed in typical {var_epsilon}-E loops. The predicted nonlinear behavior agreed well with the measured values in both the low- and high-field regions for lead lanthanum zirconate titanate films. The proposed model was also validated at different temperatures below the ferroelectric-to-paraelectric Curie point. The anharmonic coefficient in the model decreased from 6.142 x 10{sup -19} cm{sup 2}/V{sup 2} to 2.039 x 10{sup -19} cm{sup 2}/V{sup 2} when the temperature increased from 25 C to 250 C.

  1. Induction of ferroelectricity in the B2 phase of a liquid crystal composed of achiral bent-core molecules

    NASA Astrophysics Data System (ADS)

    Etxebarria, J.; Folcia, C. L.; Ortega, J.; Ros, M. B.

    2003-04-01

    We report the observation of a transition from the antiferroelectric B2 phase to a ferroelectric phase in a liquid crystal composed of achiral bent-core (banana-shaped) molecules. The transition is induced by an electric field of magnitude larger than the switching threshold and is not reversible, i.e., the original B2 phase does not reappear upon field removal. The transformation is accompanied by a dramatic texture change, resulting in an almost optically isotropic structure in the absence of field. The ferroelectric character assigned to the structure is based on the electro-optic behavior of the material and on previously reported dielectric measurements. A short-pitch smectic-C*-type structure is proposed for the ferroelectric phase.

  2. Are lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) ferroelectrics bioactive?

    PubMed

    Vilarinho, Paula Maria; Barroca, Nathalie; Zlotnik, Sebastian; Félix, Pedro; Fernandes, Maria Helena

    2014-06-01

    The use of functional materials, such as ferroelectrics, as platforms for tissue growth in situ or ex situ, is new and holds great promise. But the usage of materials in any bioapplication requires information on biocompatibility and desirably on bioactive behavior when bone tissue engineering is envisaged. Both requirements are currently unknown for many ferroelectrics. Herein the bioactivity of LiNbO3 and LiTaO3 is reported. The formation of apatite-like structures on the surface of LiNbO3 and LiTaO3 powders after immersion in simulated body fluid (SBF) for different soaking periods indicates their bioactive potential. The mechanism of apatite formation is suggested. In addition, the significant release of lithium ions from the ferroelectric powders in the very first minutes of soaking in SBF is examined and ways to overcome this likely hurdle addressed.

  3. Properties of ferroelectric/ferromagnetic thin film heterostructures

    SciTech Connect

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Celinski, Zbigniew; Nie, Yan

    2014-05-07

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi{sub 2}Ta{sub 2}O{sub 9}/BaFe{sub 12}O{sub 19} (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  4. Soft memory in a ferroelectric nanoparticle-doped liquid crystal.

    PubMed

    Basu, Rajratan

    2014-02-01

    A small quantity of BaTiO(3) ferroelectric nanoparticles (FNP) was doped in a liquid crystal (LC), and the LC + FNP hybrid was found to exhibit a nonvolatile electromechanical memory effect in the isotropic phase. The permanent dipole moment of the FNPs causes the LC molecule to form short-range pseudonematic domains surrounding the FNPs. The FNP-induced short-range orders become more prominent in the isotropic phase when the global nematic order is absent. These short-range domains, being anisotropic in nature, interact with an external electric field, exhibiting a Fréedericksz-type transition. When the field is turned off, these domains stay oriented, showing a hysteresis effect due to the absence of any long-range order and restoring forces in the isotropic phase. The hysteresis graph for this memory effect shows a significant pretransitional behavior on approaching the nematic phase from the isotropic phase.

  5. Soft memory in a ferroelectric nanoparticle-doped liquid crystal

    NASA Astrophysics Data System (ADS)

    Basu, Rajratan

    2014-02-01

    A small quantity of BaTiO3 ferroelectric nanoparticles (FNP) was doped in a liquid crystal (LC), and the LC + FNP hybrid was found to exhibit a nonvolatile electromechanical memory effect in the isotropic phase. The permanent dipole moment of the FNPs causes the LC molecule to form short-range pseudonematic domains surrounding the FNPs. The FNP-induced short-range orders become more prominent in the isotropic phase when the global nematic order is absent. These short-range domains, being anisotropic in nature, interact with an external electric field, exhibiting a Fréedericksz-type transition. When the field is turned off, these domains stay oriented, showing a hysteresis effect due to the absence of any long-range order and restoring forces in the isotropic phase. The hysteresis graph for this memory effect shows a significant pretransitional behavior on approaching the nematic phase from the isotropic phase.

  6. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  7. Ferroelectric domain wall motion induced by polarized light.

    PubMed

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F

    2015-03-17

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light.

  8. Ferroelectric domain engineering by focused infrared femtosecond pulses

    SciTech Connect

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan; Karpinski, Pawel; Koynov, Kaloian; Wang, Bingxia; Trull, Jose; Cojocaru, Crina; Krolikowski, Wieslaw

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  9. Ferroelectric devices using lead zirconate titanate (PZT) nanoparticles.

    PubMed

    Paik, Young Hun; Kojori, Hossein Shokri; Kim, Sung Jin

    2016-02-19

    We successfully demonstrate the synthesis of lead zirconate titanate nanoparticles (PZT NPs) and a ferroelectric device using the synthesized PZT NPs. The crystalline structure and the size of the nanocrystals are studied using x-ray diffraction and transmission electron microscopy, respectively. We observe <100 nm of PZT NPs and this result matches dynamic light scattering measurements. A solution-based low-temperature process is used to fabricate PZT NP-based devices on an indium tin oxide substrate. The fabricated ferroelectric devices are characterized using various optical and electrical measurements and we verify ferroelectric properties including ferroelectric hysteresis and the ferroelectric photovoltaic effect. Our approach enables low-temperature solution-based processes that could be used for various applications. To the best of our knowledge, this low-temperature solution processed ferroelectric device using PZT NPs is the first successful demonstration of its kind.

  10. Ferroelectric domain wall motion induced by polarized light.

    PubMed

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO₃ single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO₃ at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  11. Study of ferroelectric characteristics of diisopropylammonium bromide films

    NASA Astrophysics Data System (ADS)

    Thirmal, C.; Biswas, P. P.; Shin, Y. J.; Noh, T. W.; Giridharan, N. V.; Venimadhav, A.; Murugavel, P.

    2016-09-01

    Organic molecular ferroelectrics are highly desirable due to their numerous advantages. In the present work, a thick film of diisopropylammonium bromide organic molecular ferroelectric is fabricated on the ITO/glass substrate. The grown film shows preferential orientation along the c-axis with a ferroelectric transition at 419 K. The piezoresponse force microscopic measurements are done in a dual ac resonance tracking mode for its switching characteristics. The amplitude and phase images of the oppositely written domain patterns exhibit a clear contrast with 180° phase difference. The dynamical spectroscopic studies reveal a butterfly loop in amplitude and hysteretic character of the phase which are the expected characteristics features of ferroelectrics. In addition, the macroscopic polarization versus electric field hysteresis gives an additional proof for ferroelectric character of the film with the maximum polarization of 3.5 μC/cm2. Overall, we have successfully fabricated diisopropylammonium bromide organic films and demonstrated its room temperature ferroelectric characteristics.

  12. Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides

    NASA Astrophysics Data System (ADS)

    Fei, Ruixiang; Kang, Wei; Yang, Li

    2016-08-01

    Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides M X (M =Ge , Sn; X =S , Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials.

  13. Ferroelectric domain wall motion induced by polarized light

    PubMed Central

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  14. Molecule-displacive ferroelectricity in organic supramolecular solids

    NASA Astrophysics Data System (ADS)

    Ye, Heng-Yun; Zhang, Yi; Noro, Shin-Ichiro; Kubo, Kazuya; Yoshitake, Masashi; Liu, Zun-Qi; Cai, Hong-Ling; Fu, Da-Wei; Yoshikawa, Hirofumi; Awaga, Kunio; Xiong, Ren-Gen; Nakamura, Takayoshi

    2013-07-01

    Ferroelectricity is essential to many forms of current technology, ranging from sensors and actuators to optical or memory devices. In this circumstance, organic ferroelectrics are of particular importance because of their potential application in tomorrow's organic devices, and several pure organic ferroelectrics have been recently developed. However, some problems, such as current leakage and/or low working frequencies, make their application prospects especially for ferroelectric memory (FeRAM) not clear. Here, we describe the molecule-displacive ferroelectricity of supramolecular adducts of tartaric acid and 1,4-diazabicyclo[2.2.2]octane N,N'-dioxide. The adducts show large spontaneous polarization, high rectangularity of the ferroelectric hysteresis loops even at high operation frequency (10 kHz), and high performance in polarization switching up to 1 × 106 times without showing fatigue. It opens great perspectives in terms of applications, especially in organic FeRAM.

  15. Ferroelectricity and Phase Transitions in Monolayer Group-IV Monochalcogenides.

    PubMed

    Fei, Ruixiang; Kang, Wei; Yang, Li

    2016-08-26

    Ferroelectricity usually fades away as materials are thinned down below a critical value. We reveal that the unique ionic-potential anharmonicity can induce spontaneous in-plane electrical polarization and ferroelectricity in monolayer group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se). An effective Hamiltonian has been successfully extracted from the parametrized energy space, making it possible to study the ferroelectric phase transitions in a single-atom layer. The ferroelectricity in these materials is found to be robust and the corresponding Curie temperatures are higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. We further provide the phase diagram and predict other potentially two-dimensional ferroelectric materials. PMID:27610884

  16. Residual ferroelectricity, piezoelectricity, and flexoelectricity in barium strontium titanate tunable dielectrics

    NASA Astrophysics Data System (ADS)

    Garten, Lauren M.

    Loss reduction is critical to the development of Ba 1-xSrxTiO3 (BST) thin film tunable microwave dielectrics. This work addresses mechanisms of loss and performance of Ba1-xSr xTiO3, such as residual ferroelectricity, enhanced flexocoupling, and dc electric field induced piezoelectricity. The presence of residual ferroelectricity --a persistent ferroelectric response above the global phase transition temperature, adds a contribution to dielectric loss from either motion of domain walls or the boundaries of micropolar regions, degrading the tunable performance over a wide frequency range. Rayleigh behavior as a function of temperature was used to track the ferroelectric behavior of BST materials through the ferroelectric to paraelectric transition temperature. The irreversible Rayleigh parameter serve as a metric for the presence of ferroelectricity because this response is dependent on the presence of domain walls, cluster boundaries or phase boundaries. Chemical solution deposited Ba0.7Sr0.3TiO3 films, with relative tunabilities of 86% over 250kV/cm at 100kHz, demonstrated residual ferroelectricity at least 65°C above the ostensible paraelectric transition temperature. The Rayleigh behavior was further corroborated with second harmonic generation, polarization-electric field hysteresis loops and the frequency dependence of the Rayleigh response. The temperature extent of residual ferroelectricity in sputtered and chemical solution deposited films and bulk ceramics was investigated as a function of chemical inhomogeneity on the A-site using electron energy loss spectroscopy. All samples showed some residual ferroelectricity, where the temperature extent was a function of the sample processing. The application of AC electric field for residual ferroelectric measurements of these samples lead to a 100% increase in loss for ac fields exceeding 10kV/cm at room temperature. The presence of residual ferroelectricity in BST also correlates to the increased flexoelectric

  17. Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.

    PubMed

    Zhang, Xun; Chen, Lin; Sun, Qing-Qing; Wang, Lu-Hao; Zhou, Peng; Lu, Hong-Liang; Wang, Peng-Fei; Ding, Shi-Jin; Zhang, David Wei

    2015-01-01

    Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm(2) and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).

  18. Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

    NASA Astrophysics Data System (ADS)

    Verma, Ram Mohan; Rao, Ashwath; Singh, B. R.

    2014-03-01

    This paper presents our work on electrical characterization of metal-ferroelectric-oxide-semiconductor (MFeOS) and metal-ferroelectric-nitride-semiconductor (MFeNS) structures for nonvolatile memory applications. Thin films of lead zirconate titanate (PZT: 35:65) have been used as ferroelectric material on 2.5-5 nm thick thermally grown SiO2 and Si3N4 as buffer layer for MFeOS and MFeNS structures, respectively. Capacitance-Voltage (C-V) and Current-Voltage (I-V) characteristics were used for electrical characterization. Our comparative results reveal that the MFeNS structure with 2.5 nm thick buffer layer has higher memory window of about 3.6 V as compared to 3 V for similar MFeOS structure. Also superior electrical properties such as lower leakage current and higher dielectric strength were observed in MFeNS structures. Higher nitridation time was observed to deteriorate the polarization characteristics resulting in reduced memory window. The highest memory window of 6.5 V was observed for SiO2 buffer layer thickness of 5 nm. We also observed that the annealing temperature influences the leakage current characteristic and memory window of these structures.

  19. A ferroelectric model for the low emissivity highlands on Venus

    NASA Technical Reports Server (NTRS)

    Shepard, Michael K.; Arvidson, Raymond E.; Brackett, Robert A.; Fegley, Bruce, Jr.

    1994-01-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (10(exp 5)) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  20. One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

    PubMed Central

    Liang, Longyue; Kang, Xueliang

    2016-01-01

    One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined. PMID:27812477

  1. Ferroelectric nanostructure having switchable multi-stable vortex states

    DOEpatents

    Naumov, Ivan I.; Bellaiche, Laurent M.; Prosandeev, Sergey A.; Ponomareva, Inna V.; Kornev, Igor A.

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  2. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  3. Spin-phonon coupling and ferroelectricity in magnetoelectric gallium ferrite

    NASA Astrophysics Data System (ADS)

    Mukherjee, Somdutta

    2014-03-01

    Gallium ferrite (GaFeO3 or GFO) is a low temperature ferrimagnet and room temperature piezoelectric wherein the magnetic transition temperature (TC) could be tailored to room temperature and above by tuning the stoichiometry and processing conditions. Such tunability of the magnetic transition temperature renders GFO a unique perspective in the research of multiferroics to potentially demonstrate room temperature magnetoelectric effect attractive for futuristic digital memory applications. Recent studies in several transition metal oxides highlight the importance of spin-phonon coupling in designing novel multiferroics by means of strain induced phase transition. In the present work, we have systematically studied the evolution of phonons in good quality samples of GFO across the TC using Raman spectroscopy. Using the phonon softening behavior and nearest neighbor spin-spin correlation function below TC we estimated spin-phonon coupling strength in the magnetically ordered state. In the process, we also show, for the first time, the presence of a spin glass phase in GFO where the spin-glass transition has a signature of abrupt change in spin-phonon coupling strength. Though GFO is piezoelectric and crystallizes in polar Pc21n symmetry, its ferroelectric nature remained controversial probably due to the large leakage current in the bulk material. To address this issue, we deposited epitaxial thin film on single crystalline yttria stabilized zirconia (YSZ) substrate using indium tin oxide (ITO) as a bottom conducting layer. We demonstrate clear evidence of room temperature ferroelectricity in the thin films from the 180o phase shift of the piezoresponse upon switching the electric field. Further, suppression of dielectric anomaly in presence of an external magnetic field clearly reveals a pronounced magneto-dielectric coupling across the magnetic transition temperature. In addition, using first principles calculations we elucidate that Fe ions are not only

  4. Switchable diode-effect mechanism in ferroelectric BiFeO{sub 3} thin film capacitors

    SciTech Connect

    Matsuo, Hiroki; Kitanaka, Yuuki; Inoue, Ryotaro; Noguchi, Yuji Miyayama, Masaru

    2015-09-21

    We investigate the mechanism of a switchable diode behavior observed in ferroelectric SrRuO{sub 3}/BiFeO{sub 3} (BFO)/SrRuO{sub 3} capacitors. We experimentally demonstrate that the switchable diode effect observed in the capacitors is induced by the polarization reversal in the BFO film. The conductivity in an Ohmic region in different oxidation states provides direct evidence that electron hole acts as the majority carrier, delivering p-type conduction. Density functional theory (DFT) calculations show that the p-type conduction arises from an unoccupied gap state of Fe{sup 4+} in an FeO{sub 5} pyramid which is derived from Bi vacancy. Our experimental and DFT study leads to the conclusion that the switchable diode effect originates from an asymmetric band bending in the top and bottom depletion layers modulated by ferroelectric polarization and oxygen vacancies.

  5. The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Moghaddam, Saeed; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.

    2014-08-18

    Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  6. Relaxation of ferroelectric states in 2D distributions of quantum dots: EELS simulation

    NASA Astrophysics Data System (ADS)

    Cortés, C. M.; Meza-Montes, L.; Moctezuma, R. E.; Carrillo, J. L.

    2016-06-01

    The relaxation time of collective electronic states in a 2D distribution of quantum dots is investigated theoretically by simulating EELS experiments. From the numerical calculation of the probability of energy loss of an electron beam, traveling parallel to the distribution, it is possible to estimate the damping time of ferroelectric-like states. We generate this collective response of the distribution by introducing a mean field interaction among the quantum dots, and then, the model is extended incorporating effects of long-range correlations through a Bragg-Williams approximation. The behavior of the dielectric function, the energy loss function, and the relaxation time of ferroelectric-like states is then investigated as a function of the temperature of the distribution and the damping constant of the electronic states in the single quantum dots. The robustness of the trends and tendencies of our results indicate that this scheme of analysis can guide experimentalists to develop tailored quantum dots distributions for specific applications.

  7. Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Tomar, M.; Gupta, Vinay; Scott, J. F.; Kumar, Ashok

    2015-09-01

    We report the polarization, displacement current, and leakage current behavior of a trivalent nonpolar cation (Al3+) substituted lead free ferroelectric (Na0.46Bi0.46-xAlxBa0.08)TiO3 (NBAT-BT) (x = 0, 0.05, 0.07 and 0.10) electroceramics with tetragonal phase and P4 mm space group symmetry. Almost, three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in unpoled samples. E-poling changes "bananas" type polarization loops to real ferroelectric loops.

  8. Magnetic-field-induced ferroelectric polarization reversal in magnetoelectric composites revealed by piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Miao, Hongchen; Zhou, Xilong; Dong, Shuxiang; Luo, Haosu; Li, Faxin

    2014-07-01

    Controlling electric polarization (or magnetization) in multiferroic materials with external magnetic fields (or electric fields) is very important for fundamental physics and spintronic devices. Although there has been some progress on magnetic-field-induced polarization reversal in single-phase multiferroics, such behavior has so far never been realized in composites. Here we show that it is possible to reverse ferroelectric polarization using magnetic fields in a bilayer Terfenol-D/PMN-33%PT composite. We realized this by ferroelectric domain imaging using piezoresponse force microscopy (PFM) under applied magnetic field loading. The internal electric field caused by the magnetoelectric (ME) effect in the PMN-PT crystal is considered as the driving force for the 180° polarization switching, and its existence is verified by switching spectroscopy PFM testing under a series of external magnetic fields. A quantitative method is further suggested to estimate the local ME coefficient based on the switching spectroscopy PFM testing results.

  9. Magnetic-field-induced ferroelectric polarization reversal in magnetoelectric composites revealed by piezoresponse force microscopy.

    PubMed

    Miao, Hongchen; Zhou, Xilong; Dong, Shuxiang; Luo, Haosu; Li, Faxin

    2014-08-01

    Controlling electric polarization (or magnetization) in multiferroic materials with external magnetic fields (or electric fields) is very important for fundamental physics and spintronic devices. Although there has been some progress on magnetic-field-induced polarization reversal in single-phase multiferroics, such behavior has so far never been realized in composites. Here we show that it is possible to reverse ferroelectric polarization using magnetic fields in a bilayer Terfenol-D/PMN-33%PT composite. We realized this by ferroelectric domain imaging using piezoresponse force microscopy (PFM) under applied magnetic field loading. The internal electric field caused by the magnetoelectric (ME) effect in the PMN-PT crystal is considered as the driving force for the 180° polarization switching, and its existence is verified by switching spectroscopy PFM testing under a series of external magnetic fields. A quantitative method is further suggested to estimate the local ME coefficient based on the switching spectroscopy PFM testing results. PMID:24953042

  10. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  11. Super-crystals in composite ferroelectrics

    PubMed Central

    Pierangeli, D.; Ferraro, M.; Di Mei, F.; Di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; DelRe, E.

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies. PMID:26907725

  12. Super-crystals in composite ferroelectrics.

    PubMed

    Pierangeli, D; Ferraro, M; Di Mei, F; Di Domenico, G; de Oliveira, C E M; Agranat, A J; DelRe, E

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium-lithium-tantalate-niobate with micrometric lattice constant, 10(4) times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies.

  13. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    NASA Astrophysics Data System (ADS)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  14. Vertical Transport in Ferroelectric/Superconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Begon-Lours, Laura; Trastoy, Juan; Bernard, Rozenn; Jacquet, Eric; Carretero, Cecile; Bouzehouane, Karim; Fusil, Stephane; Garcia, Vincent; Xavier, Stephane; Girod, Stephanie; Deranlot, Cyrile; Bibes, Manuel; Barthelemy, Agnes; Villegas, Javier E.

    2015-03-01

    We study electric field-effects in superconducting films by measuring vertical transport in ferroelectric/superconductor heterostructures. These are based on ultrathin (4 to 8 nm thick) BiFeO3-Mn grown on YBa2Cu3O7 by pulsed laser deposition. Nanoscale contacts are defined on the BiFeO3 via a series of nanofabrication steps which include e-beam lithography, metal deposition (Nb or Co capped with Pt) and lift-off. Conductive-tip atomic force microscopy and piezoresponse force microscopy are used to characterize the transport across the ferroelectric barrier as a function of its polarization (up/down). The observed electro-resistance, measured at various temperatures, allows studying the different electric-field screening in the normal and superconducting states. Work supported by DIM Oxymore.

  15. Super-crystals in composite ferroelectrics

    NASA Astrophysics Data System (ADS)

    Pierangeli, D.; Ferraro, M.; di Mei, F.; di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; Delre, E.

    2016-02-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium-lithium-tantalate-niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies.

  16. Porous ferroelectrics for energy harvesting applications

    NASA Astrophysics Data System (ADS)

    Roscow, J.; Zhang, Y.; Taylor, J.; Bowen, C. R.

    2015-11-01

    This paper provides an overview of energy harvesting using ferroelectric materials, with a particular focus on the energy harvesting capabilities of porous ferroelectric ceramics for both piezo- and pyroelectric harvesting. The benefits of introducing porosity into ferro- electrics such as lead zirconate titanate (PZT) has been known for over 30 years, but the potential advantages for energy harvesting from both ambient vibrations and temperature fluctuations have not been studied in depth. The article briefly discusses piezoelectric and pyro- electric energy harvesting, before evaluating the potential benefits of porous materials for increasing energy harvesting figures of merits and electromechanical/electrothermal coupling factors. Established processing routes are evaluated in terms of the final porous structure and the resulting effects on the electrical, thermal and mechanical properties.

  17. Ferroelectricity in (K@C60)n

    NASA Astrophysics Data System (ADS)

    Clougherty, Dennis P.

    2000-09-01

    A theoretical analysis of the ground state of long-chain (K@C60)n is presented. Within mean field theory, a ferroelectric ground state is found to be stable because of the pseudo-Jahn-Teller mixing of the b1u and the b2g band with a zone-center optical phonon involving the displacement of the endohedral K- ions. A phase diagram for this model is derived in the narrow bandwidth regime.

  18. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  19. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  20. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, Peter J.

    1987-01-01

    A method of electrically inducing mechanical precompression of a ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion.