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Sample records for relaxor ferroelectric behavior

  1. Relaxor ferroelectric behavior of poly(vinylidene fluoride-trifluorethylene) copolymer modified by low energy irradiation

    SciTech Connect

    Faria, Luiz O.; Welter, Cezar; Moreira, Roberto L.

    2006-05-08

    We report a relaxorlike modification in the ferroelectric poly(vinylidene fluoride-trifluorethylene) copolymer using ultraviolet (UV) irradiation. This behavior is clearly demonstrated by dielectric measurements. Besides the relaxor feature, the ferroelectric character of the material is retained, also exhibiting Curie transition at barely diminished temperatures. UV-Vis absorption measurements suggests that the UV radiation induces conjugated C=C bonds in the copolymer chains. The coexistence of both relaxor and ferroelectric behavior, the lack of chain cross-linking, and a weak reducing in the crystallinity suggest that the UV-induced defects are not sufficient to completely break up the polarization domains.

  2. Tetragonal tungsten bronze compounds: relaxor versus mixed ferroelectric-dipole glass behavior.

    PubMed

    Stephanovich, V A

    2010-06-16

    We demonstrate that recent experimental data (Castel et al 2009 J. Phys.: Condens. Matter 21 452201) on the tungsten bronze compound (TBC) Ba(2)Pr(x)Nd(1-x)FeNb(4)O(15) can be well explained in our model predicting a crossover from ferroelectric (x = 0) to orientational (dipole) glass (x = 1), rather then relaxor, behavior. We show that, since a 'classical' perovskite relaxor like Pb(Mn(1/3)Nb(2/3))O(3) is never a ferroelectric, the presence of ferroelectric hysteresis loops in the TBC shows that this substance actually transits from ferroelectric to orientational glass phase with x growth. To describe the above crossover theoretically, we use the simple replica-symmetric solution for the disordered Ising model.

  3. Multidimensional dynamic piezoresponse measurements. Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    SciTech Connect

    Vasudevan, Rama K.; Zhang, Shujun; Okatan, Mahmut Baris; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

    2015-08-19

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. We use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias the average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. As a result, these studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.

  4. Multidimensional dynamic piezoresponse measurements. Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    DOE PAGES

    Vasudevan, Rama K.; Zhang, Shujun; Okatan, Mahmut Baris; ...

    2015-08-19

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. We use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias themore » average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. As a result, these studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.« less

  5. Multidimensional dynamic piezoresponse measurements: Unraveling local relaxation behavior in relaxor-ferroelectrics via big data

    NASA Astrophysics Data System (ADS)

    Vasudevan, Rama K.; Zhang, Shujun; Baris Okatan, M.; Jesse, Stephen; Kalinin, Sergei V.; Bassiri-Gharb, Nazanin

    2015-08-01

    Compositional and charge disorder in ferroelectric relaxors lies at the heart of the unusual properties of these systems, such as aging and non-ergodicity, polarization rotations, and a host of temperature and field-driven phase transitions. However, much information about the field-dynamics of the polarization in the prototypical ferroelectric relaxor (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) remains unprobed at the mesoscopic level. Here, we use a piezoresponse force microscopy-based dynamic multimodal relaxation spectroscopy technique, enabling the study of ferroelectric switching and polarization relaxation at mesoscopic length scales, and carry out measurements on a PMN-0.28PT sample with minimal polishing. Results indicate that beyond a threshold DC bias the average relaxation increases as the system attempts to relax to the previous state. Phenomenological fitting reveals the presence of mesoscale heterogeneity in relaxation amplitudes and clearly suggests the presence of two distinct amplitudes. Independent component analysis reveals the presence of a disorder component of the relaxation, which is found to be strongly anti-correlated with the maximum piezoresponse at that location, suggesting smaller disorder effects where the polarization reversal is large and vice versa. The disorder in the relaxation amplitudes is postulated to arise from rhombohedral and field-induced tetragonal phase in the crystal, with each phase associated with its own relaxation amplitude. These studies highlight the crucial importance of the mixture of ferroelectric phases in the compositions in proximity of the morphotropic phase boundary in governing the local response and further highlight the ability of PFM voltage and time spectroscopies, in conjunction with big-data multivariate analyses, to locally map disorder and correlate it with parameters governing the dynamic behavior.

  6. Electrocaloric cooling based on relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Suchaneck, Gunnar; Gerlach, Gerald

    2015-03-01

    In this work, we consider the electrocaloric effect in relaxor ferroelectrics above the temperature of the dielectric constant maximum. For the purpose of modelling, a modified Curie--Weiss law was adapted to approximate the complex physics of relaxors. The requirements to electrocaloric materials derived on this basis are fulfilled by relaxor single crystals, ceramics and high-quality thin films. Relaxor ferroelectrics exhibit a suitable electrocaloric performance starting at applied electric fields of about 25 V/μm.

  7. Topological Point Defects in Relaxor Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nahas, Y.; Prokhorenko, S.; Kornev, I.; Bellaiche, L.

    2016-03-01

    First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba (Zr0.5 Ti0.5 )O3 (BZT) and Pb (Sc0.5 Nb0.5 )O3 (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

  8. Partially transformed relaxor ferroelectric single crystals with distributed phase transformation behavior

    NASA Astrophysics Data System (ADS)

    Gallagher, John A.

    2015-11-01

    Relaxor ferroelectric single crystals such as PMN-PT and PIN-PMN-PT undergo field driven phase transformations when electrically or mechanically loaded in crystallographic directions that provide a positive driving force for the transformation. The observed behavior in certain compositions is a phase transformation distributed over a range of fields without a distinct forward or reverse coercive field. This work focuses on the material behavior that is observed when the crystals are loaded sufficiently to drive a partial transformation and then unloaded, as might occur when driving a transducer to achieve high power levels. Distributed transformations have been modeled using a normal distribution of transformation thresholds. A set of experiments was conducted to characterize the hysteresis loops that occur with the partial transformations. In this work the normal distribution model is extended to include the partial transformations that occur when the field is reversed before the transformation is complete. The resulting hysteresis loops produced by the model are in good agreement with the experimental results.

  9. Multiscale dynamics in relaxor ferroelectrics

    SciTech Connect

    Toulouse, J.; Cai, L; Pattnaik, R. K.; Boatner, Lynn A

    2014-01-01

    The multiscale dynamics of complex oxides is illustrated by pairs of mechanical resonances that are excited in the relaxor ferroelectric K1 xLixTaO3 (KLT). These macroscopic resonances are shown to originate in the collective dynamics of piezoelectric polar nanodomains (PND) interacting with the surrounding lattice. Their characteristic Fano lineshapes and rapid evolution with temperature reveal the coherent interplay between the piezoelectric oscillations and orientational relaxations of the PNDs at higher temperature and the contribution of heterophase oscillations near the phase transition. A theoretical model is presented, that describes the evolution of the resonances over the entire temperature range. Similar resonances are observed in other relaxors and must therefore be a common characteristics of these systems.

  10. Mechanical flexible and electric fatigue resistant behavior of relaxor ferroelectric terpolymer

    NASA Astrophysics Data System (ADS)

    Fang, Fei; Yang, Wei; Yang, Wen

    2009-08-01

    Uniaxial tension and polarization evolution under cyclic electric field are investigated for poly(vinylidene fluoride-trifluorethylene-chlorofluoroethylene) terpolymer films prepared by different annealing conditions. The stress-strain behavior of the terpolymer film exhibits that of polymeric elastomers, with its fracture strain reaching 680%. Structure analysis demonstrates that the polymer chains undergo reorientation, and conformational change from nonpolar to polar phase takes place during uniaxial tension. Under cyclic electric field, the terpolymer film exhibits a narrow polarization loop typical of a ferroelectric relaxor. Conformational change from nonpolar to polar phase also occurs upon the electric field, and it reverses to the nonpolar phase when the field is removed. As the cycle number accumulates, the terpolymer film demonstrates excellent resistance to electric fatigue. Compared to the film annealed at 115 °C, the terpolymer film annealed at 100 °C has a larger volume fraction of crystallite/amorphous interfaces and shows better mechanical flexibility as well as electric fatigue resistance. The mechanical flexible and electric fatigue resistant terpolymer films hold promises for many applications, ranging from embedded sensors and actuators to flexible memory devices.

  11. Barkhausen noise in a relaxor ferroelectric.

    PubMed

    Colla, Eugene V; Chao, Lambert K; Weissman, M B

    2002-01-07

    Barkhausen noise, including both periodic and aperiodic components, is found in and near the relaxor regime of a familiar relaxor ferroelectric, PbMg(1/3)Nb(2/3)O3, driven by a periodic electric field. The temperature dependences of both the amplitude and spectral form show that the size of the coherent changes in the dipole moment shrink as the relaxor regime is entered, contrary to expectations based on some simple models.

  12. Effects of composition and temperature on the large field behavior of [011]{sub C} relaxor ferroelectric single crystals

    SciTech Connect

    Gallagher, John A.; Lynch, Christopher S.; Tian, Jian

    2014-08-04

    The large field behavior of [011]{sub C} cut relaxor ferroelectric lead indium niobate–lead magnesium niobate–lead titanate, xPb(In{sub 1/2}Nb{sub 1/2})O{sub 3}-(1-x-y)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-yPbTiO{sub 3}, single crystals was experimentally characterized in the piezoelectric d{sub 322}-mode configuration under combined mechanical, electrical, and thermal loading. Increasing the concentration of lead indium niobate and decreasing the concentration of lead titanate in compositions near the morphotropic phase boundary resulted in a decrease of mechanical compliance, dielectric permittivity, and piezoelectric coefficients as well as a shift from a continuous to a discontinuous transformation.

  13. Role of template layer on microstructure, phase formation and polarization behavior of ferroelectric relaxor thin films

    NASA Astrophysics Data System (ADS)

    Ranjith, R.; Chaudhuri, Ayan Roy; Krupanidhi, S. B.; Victor, P.

    2007-05-01

    (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 (PMNPT) a relaxor ferroelectric has gained attention due to its interesting physical properties both in the bulk and thin film forms from a technological and fundamental point of view. The PMNPT solid solution at the morphotropic phase boundary composition has superior properties and is potentially used as an electrostrictive actuator, sensor, and in MEMS applications. Deposition of phase pure PMNPT thin films on bare platinized silicon wafers has been an impossible task so far. In this study the role of the LSCO template on the phase formation and the influence of platinum surface on the same have been studied. It was observed that formation of hillocks in Pt coated silicon wafers is associated with an ATG type of instability while roughening through strain relaxation. The hillocks formation was observed only on the troughs of the strain waves on the surface of Pt. The nucleation and growth of the PMNPT films were analyzed using AFM studies and the nucleation nucleates only at the tips of the hillocks and grows along the same direction with a new nucleus adjacent to the first one. A wavy pattern of PMNPT nuclei was observed and later the lateral growth of the islands takes place to cover the surface and minimizes the roughness to 2 nm. Hence, a template layer with a minimum of 40 nm is required to have a complete coverage with a roughness of less than 2 nm. The chemical states of the PMNPT films grown with and without the template layer were analyzed using x-ray photoelectron spectrum. The XPS spectrum of PMNPT deposited on a Pt surface exhibited a reduced oxidation state of niobium ions and a metallic state of Pb at the initial stage of the growth, which effectively destabilizes the perovskite phase of PMNPT in which the charge states and the ordering of Nb and Mg are more crucial to have a stable perovskite structure.

  14. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films.

    PubMed

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-28

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  15. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    NASA Astrophysics Data System (ADS)

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism.

  16. Ferroelectricity and Self-Polarization in Ultrathin Relaxor Ferroelectric Films

    PubMed Central

    Miao, Peixian; Zhao, Yonggang; Luo, Nengneng; Zhao, Diyang; Chen, Aitian; Sun, Zhong; Guo, Meiqi; Zhu, Meihong; Zhang, Huiyun; Li, Qiang

    2016-01-01

    We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0.7Sr0.3MnO3, respectively. Resistance-voltage measurements and AC impedance analysis suggest that at high temperatures Schottky depletion width in a 4 nm thick PMN-PT film deposited on Nb-SrTiO3 is smaller than the film thickness. We propose that Schottky interfacial dipoles make the dipoles of the nanometer-sized polar nanoregions (PNRs) in PMN-PT films grown on Nb-SrTiO3 point downward at high temperatures and lead to the self-polarization at room temperature with the assistance of in-plane compressive strain. This work sheds light on the understanding of epitaxial strain effects on relaxor ferroelectric films and self-polarization mechanism. PMID:26817516

  17. Induction of relaxor state in ordinary ferroelectrics by isovalent ion substitution: A pretransitional martensitic texture case

    NASA Astrophysics Data System (ADS)

    Lente, M. H.; Moreira, E. N.; Garcia, D.; Eiras, J. A.; Neves, P. P.; Doriguetto, A. C.; Mastelaro, V. R.; Mascarenhas, Y. P.

    2006-02-01

    The understanding of the structural origin of relaxor ferroelectrics has been doubtlessly a long-standing puzzle in the field of ferroelectricity. Thus, motivated by the interest in improving the comprehension of this important issue, it a framework is proposed for explaining the origin of the relaxor state in ordinary ferroelectrics induced via the isovalent-ion substitution. Based on the martensitic transformation concepts, it is proposed that the continuous addition of isovalent ions in a so-called normal ferroelectric decreases considerably the elastic strain energy. This results in a gradual transformation of ferroelectric domain patterns from a micrometer polydomain structure (twins), through single domains, to nanometer-polar-“tweed” structures with glasslike behavior, that are, in turn, strongly driven by point defects and surface effects. The electrical interaction between these weakly coupled polar-tweed structures leads to a wide spectrum of relaxation times, thus resulting in a dielectric relaxation process, the signature of relaxor ferroelectrics.

  18. Development of "fragility" in relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, Yi-zhen; Chen, Lan; Wang, Hai-yan; Frank Zhang, X.; Fu, Jun; Xiong, Xiao-min; Zhang, Jin-xiu

    2014-02-01

    Relaxor ferroelectrics (RFs), a special class of the disordered crystals or ceramics, exhibit a pronounced slowdown of their dynamics upon cooling as glass-forming liquids, called the "Super-Arrhenius (SA)" relaxation. Despite great progress in glass-forming liquids, the "fragility" property of the SA relaxation in RFs remains unclear so far. By measuring the temperature-dependent dielectric relaxation in the typical relaxor Pb(Mg1/3Nb2/3)O3-x%PbTiO3 (PMN - x%PT) with 0 ≤ x ≤ 20.0, we in-depth study the "fragility" properties of the SA relaxation in PMN - x%PT. Such fascinating issues as the mechanism of the "fragility" at an atomic scale, the roles of the systematic configurational entropy change and interaction among relaxing units (RUs, including polar nanoregions and free dipoles) and the relation between "fragility" and ferroelectric order are investigated. Our results show that both the "fragility" of the temperature-dependent SA relaxation and ferroelectric order in the PMN - x%PT systems investigated arise thermodynamically from the configurational-entropy loss due to the attractive interaction among RUs, and develops as a power law, possibly diverging at the finite critical temperature Tc. A reasonable physical scenario, based on our "configurational-entropy-loss" theory and Nowick's "stress-induced-ordering" theory, was proposed.

  19. Phonon localization drives polar nanoregions in a relaxor ferroelectric.

    PubMed

    Manley, M E; Lynn, J W; Abernathy, D L; Specht, E D; Delaire, O; Bishop, A R; Sahul, R; Budai, J D

    2014-04-10

    Relaxor ferroelectrics exemplify a class of functional materials where interplay between disorder and phase instability results in inhomogeneous nanoregions. Although known for about 30 years, there is no definitive explanation for polar nanoregions (PNRs). Here we show that ferroelectric phonon localization drives PNRs in relaxor ferroelectric PMN-30%PT using neutron scattering. At the frequency of a preexisting resonance mode, nanoregions of standing ferroelectric phonons develop with a coherence length equal to one wavelength and the PNR size. Anderson localization of ferroelectric phonons by resonance modes explains our observations and, with nonlinear slowing, the PNRs and relaxor properties. Phonon localization at additional resonances near the zone edges explains competing antiferroelectric distortions known to occur at the zone edges. Our results indicate the size and shape of PNRs that are not dictated by complex structural details, as commonly assumed, but by phonon resonance wave vectors. This discovery could guide the design of next generation relaxor ferroelectrics.

  20. High-resolution 2-D Bragg diffraction reveal heterogeneous domain transformation behavior in a bulk relaxor ferroelectric

    DOE PAGES

    Pramanick, Abhijit; Stoica, Alexandru D.; An, Ke

    2016-09-02

    In-situ measurement of fine-structure of neutron Bragg diffraction peaks from a relaxor single-crystal using a time-of-flight instrument reveals highly heterogeneous mesoscale domain transformation behavior under applied electric fields. We observed that only 25% of domains undergo reorienta- tion or phase transition contributing to large average strains, while at least 40% remain invariant and exhibit microstrains. Such insights could be central for designing new relaxor materials with better performance and longevity. The current experimental technique can also be applied to resolve com- plex mesoscale phenomena in other functional materials.

  1. Pressure as a probe of the physics of relaxor ferroelectrics

    SciTech Connect

    SAMARA,GEORGE A.

    2000-01-25

    Pressure studies have provided new insights into the physics of compositionally-disordered ABO{sub 3} oxide relaxors. Specifically, results will be presented and discussed on a pressure-induced ferroelectric-to-relaxer crossover phenomenon, the continuous evolution of the energetic and dynamics of the relaxation process, and the interplay between pressure and electric field in determining the dielectric response.

  2. Relaxor behavior in manganites (invited)

    NASA Astrophysics Data System (ADS)

    Kimura, T.; Tokura, Y.; Kumai, R.; Okimoto, Y.; Tomioka, Y.

    2001-06-01

    The impurity (Cr3+)-doping effect on the stability of charge and orbital ordering has been systematically investigated for Nd1/2Ca1/2Mn1-yCryO3 crystals by measurements of magnetotransport and x-ray diffraction. The random field in terms of eg orbital deficiencies on the Cr sites drives the charge and orbital correlations to dynamical and short range, which is most relevant to the high-resistive state exhibiting colossal magnetoresistance. In the Cr-doped manganite, we can observe the coexistence of ferromagnetic-metallic and charge-orbital ordered phases, their spatial distributions, diffuse x-ray scattering, magnetic-field annealing, and the aging effect on the magnetic and electric properties, etc. These phenomena are reminiscent of those of relaxor ferroelectrics composed of ferroelectric clusters embedded in a paraelectric matrix. We propose that the mixed-valent manganite can be viewed as a "magneto- and electrorelaxor."

  3. Relaxor or classical ferroelectric behavior in A-site substituted perovskite type Ba 1- x(Sm 0.5Na 0.5) xTiO 3

    NASA Astrophysics Data System (ADS)

    Abdelmoula, N.; Chaabane, H.; Khemakhem, H.; Von der Mühll, R.; Simon, A.

    2006-08-01

    New ferroelectric ceramics of ABO 3 perovskite type were synthetized in the Ba 1- x(Sm 0.5Na 0.5) xTiO 3 system by solid state reaction technique. The effect of the replacement of barium by samarium and sodium in the A cationic site on structural and physical properties was investigated. These compounds crystallize with tetragonal or cubic symmetry. The material is classical ferroelectric for 0⩽x⩽0.1 and x⩾0.5, and present a relaxor behavior for 0.2⩽x<0.4. The dielectric behavior depends upon the cationic disorder in the A-site and the cell size. Small rate substitution allows a ferroelectric-paraelectric transition. For higher rate of substitution the possible random position of the Sm-Na cations brings to a relaxor state and when the substitution rate x becomes higher than 0.5, the material comes back to a ferroelectric state due to the reduced cell size. Some of these new compositions are of interest for applications due to their physical properties and environmentally friendly character.

  4. Specific heat anomaly in relaxor ferroelectrics and dipolar glasses

    NASA Astrophysics Data System (ADS)

    Kutnjak, Z.; Pirc, R.

    2017-03-01

    The temperature and electric field dependence of the specific heat of relaxor ferroelectrics and dipolar glasses is investigated by means of a Landau-type theoretical model. It is shown that the dipolar specific heat, which is due to the randomly interacting polar nanoregions in relaxors and electric dipoles in dipolar glasses, is negative in a temperature region below the permittivity maximum. Also, it follows that for sufficiently low values of the field, where the induced polarization shows a quasi linear field dependence, the dipolar specific heat is proportional to the second temperature derivative of the dielectric polarization. This quantity can be extracted from the experimental temperature profile of the polarization, thus enabling an indirect experimental estimate of the negative specific heat, which is demonstrated for a set of representative relaxor and dipolar glass systems.

  5. Relaxor-ferroelectric superlattices: high energy density capacitors

    NASA Astrophysics Data System (ADS)

    Ortega, N.; Kumar, A.; Scott, J. F.; Chrisey, Douglas B.; Tomazawa, M.; Kumari, Shalini; Diestra, D. G. B.; Katiyar, R. S.

    2012-11-01

    We report the breakdown electric field and energy density of laser ablated BaTiO3/Ba(1-x)SrxTiO3 (x = 0.7) (BT/BST) relaxor-ferroelectric superlattices (SLs) grown on (100) MgO single crystal substrates. The dielectric constant shows a frequency dispersion below the dielectric maximum temperature (Tm) with a merger above Tm behaving similarly to relaxors. It also follows the basic criteria of relaxor ferroelectrics such as low dielectric loss over wide temperature and frequency, and 50 K shift in Tm with change in probe frequency; the loss peaks follow a similar trend to the dielectric constant except that they increase with increase in frequency (˜40 kHz), and satisfy the nonlinear Vogel-Fulcher relation. Well-saturated ferroelectric hysteresis and 50-80% dielectric saturation are observed under high electric field (˜1.65 MV cm-1). The superlattices demonstrate an ‘in-built’ field in as grown samples at low probe frequency (<1 kHz), whereas it becomes more symmetric and centered with increase in the probe frequency system (>1 kHz) which rules out the effect of any space charge and interfacial polarization. The P-E loops show around 12.24 J cm-3 energy density within the experimental limit, but extrapolation of this data suggests that the potential energy density could reach 46 J cm-3. The current density versus applied electric field indicates an exceptionally high breakdown field (5.8-6.0 MV cm-1) and low current density (˜10-25 mA cm-2) near the breakdown voltage. The current-voltage characteristics reveal that the space charge limited conduction mechanism prevails at very high voltage.

  6. Relaxor Ferroelectrics: Back to the Single-Soft-Mode Picture

    NASA Astrophysics Data System (ADS)

    Hehlen, B.; Al-Sabbagh, M.; Al-Zein, A.; Hlinka, J.

    2016-10-01

    The fluctuations of electric polarization in a disordered ferroelectric substance, relaxor crystal PbMg1 /3Nb2 /3O3 (PMN), were studied using a nonlinear inelastic light-scattering technique, hyper-Raman scattering, within a 5 - 100 cm-1 spectral interval and in a broad temperature range from 20 to 900 K. The split ferroelectric mode reveals a local anisotropy of up to about 400 K. Spectral anomalies observed at higher temperatures are explained as due to avoided crossing of the single primary polar soft mode with a temperature-independent, nonpolar spectral feature near 45 cm-1 , known from Raman scattering. The temperature changes of the vibrational modes involved in the measured fluctuation spectra of PMN were captured in a simple model that accounts for the temperature dependence of the dielectric permittivity as well. The observed slowing down of the relaxational dynamics directly correlates with the huge increase of the dielectric permittivity.

  7. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

    PubMed Central

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing

    2016-01-01

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials. PMID:27991504

  8. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

    NASA Astrophysics Data System (ADS)

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing

    2016-12-01

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50-80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  9. The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals

    SciTech Connect

    Li, Fei; Zhang, Shujun; Yang, Tiannan; Xu, Zhuo; Zhang, Nan; Liu, Gang; Wang, Jianjun; Wang, Jianli; Cheng, Zhenxiang; Ye, Zuo-Guang; Luo, Jun; Shrout, Thomas R.; Chen, Long-Qing

    2016-12-19

    The discovery of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution single crystals is a breakthrough in ferroelectric materials. A key signature of relaxor-ferroelectric solid solutions is the existence of polar nanoregions, a nanoscale inhomogeneity, that coexist with normal ferroelectric domains. Despite two decades of extensive studies, the contribution of polar nanoregions to the underlying piezoelectric properties of relaxor ferroelectrics has yet to be established. Here we quantitatively characterize the contribution of polar nanoregions to the dielectric/piezoelectric responses of relaxor-ferroelectric crystals using a combination of cryogenic experiments and phase-field simulations. The contribution of polar nanoregions to the room-temperature dielectric and piezoelectric properties is in the range of 50–80%. A mesoscale mechanism is proposed to reveal the origin of the high piezoelectricity in relaxor ferroelectrics, where the polar nanoregions aligned in a ferroelectric matrix can facilitate polarization rotation. This mechanism emphasizes the critical role of local structure on the macroscopic properties of ferroelectric materials.

  10. Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review

    PubMed Central

    Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

    2014-01-01

    Relaxor-PbTiO3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients (d33 > 1500 pC/N) and electromechanical coupling factors (k33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials’ behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor

  11. Advantages and Challenges of Relaxor-PbTiO3 Ferroelectric Crystals for Electroacoustic Transducers- A Review.

    PubMed

    Zhang, Shujun; Li, Fei; Jiang, Xiaoning; Kim, Jinwook; Luo, Jun; Geng, Xuecang

    2015-03-01

    Relaxor-PbTiO3 (PT) based ferroelectric crystals with the perovskite structure have been investigated over the last few decades due to their ultrahigh piezoelectric coefficients (d33 > 1500 pC/N) and electromechanical coupling factors (k33 > 90%), far outperforming state-of-the-art ferroelectric polycrystalline Pb(Zr,Ti)O3 ceramics, and are at the forefront of advanced electroacoustic applications. In this review, the performance merits of relaxor-PT crystals in various electroacoustic devices are presented from a piezoelectric material viewpoint. Opportunities come from not only the ultrahigh properties, specifically coupling and piezoelectric coefficients, but through novel vibration modes and crystallographic/domain engineering. Figure of merits (FOMs) of crystals with various compositions and phases were established for various applications, including medical ultrasonic transducers, underwater transducers, acoustic sensors and tweezers. For each device application, recent developments in relaxor-PT ferroelectric crystals were surveyed and compared with state-of-the-art polycrystalline piezoelectrics, with an emphasis on their strong anisotropic features and crystallographic uniqueness, including engineered domain - property relationships. This review starts with an introduction on electroacoustic transducers and the history of piezoelectric materials. The development of the high performance relaxor-PT single crystals, with a focus on their uniqueness in transducer applications, is then discussed. In the third part, various FOMs of piezoelectric materials for a wide range of ultrasound applications, including diagnostic ultrasound, therapeutic ultrasound, underwater acoustic and passive sensors, tactile sensors and acoustic tweezers, are evaluated to provide a thorough understanding of the materials' behavior under operational conditions. Structure-property-performance relationships are then established. Finally, the impacts and challenges of relaxor-PT crystals

  12. Characterizing new compositions of [001]C relaxor ferroelectric single crystals using a work-energy model

    NASA Astrophysics Data System (ADS)

    Gallagher, John A.

    2016-04-01

    The desired operating range of ferroelectric materials with compositions near the morphotropic phase boundary is limited by field induced phase transformations. In [001]C cut and poled relaxor ferroelectric single crystals the mechanically driven ferroelectric rhombohedral to ferroelectric orthorhombic phase transformation is hindered by antagonistic electrical loading. Instability around the phase transformation makes the current experimental technique for characterization of the large field behavior very time consuming. Characterization requires specialized equipment and involves an extensive set of measurements under combined electrical, mechanical, and thermal loads. In this work a mechanism-based model is combined with a more limited set of experiments to obtain the same results. The model utilizes a work-energy criterion that calculates the mechanical work required to induce the transformation and the required electrical work that is removed to reverse the transformation. This is done by defining energy barriers to the transformation. The results of the combined experiment and modeling approach are compared to the fully experimental approach and error is discussed. The model shows excellent predictive capability and is used to substantially reduce the total number of experiments required for characterization. This decreases the time and resources required for characterization of new compositions.

  13. Large Electrocaloric Effect in Relaxor Ferroelectric and Antiferroelectric Lanthanum Doped Lead Zirconate Titanate Ceramics.

    PubMed

    Lu, Biao; Li, Peilian; Tang, Zhenhua; Yao, Yingbang; Gao, Xingsen; Kleemann, Wolfgang; Lu, Sheng-Guo

    2017-03-27

    Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the compositional tailoring. Here we report on a system, in which the structure can readily change from antiferroelectric into relaxor ferroelectric and vice versa. To this end relaxor ferroelectric Pb0.89La0.11(Zr0.7Ti0.3)0.9725O3 and antiferroelectric Pb0.93La0.07(Zr0.82Ti0.18)0.9825O3 ceramics were designed near the antiferroelectric-ferroelectric phase boundary line in the La2O3-PbZrO3-PbTiO3 phase diagram. Conventional solid state reaction processing was used to prepare the two compositions. The ECE properties were deduced from Maxwell relations and Landau-Ginzburg-Devonshire (LGD) phenomenological theory, respectively, and also directly controlled by a computer and measured by thermometry. Large electrocaloric efficiencies were obtained and comparable with the results calculated via the phenomenological theory. Results show great potential in achieving large cooling power as refrigerants.

  14. Large Electrocaloric Effect in Relaxor Ferroelectric and Antiferroelectric Lanthanum Doped Lead Zirconate Titanate Ceramics

    PubMed Central

    Lu, Biao; Li, Peilian; Tang, Zhenhua; Yao, Yingbang; Gao, Xingsen; Kleemann, Wolfgang; Lu, Sheng-Guo

    2017-01-01

    Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the compositional tailoring. Here we report on a system, in which the structure can readily change from antiferroelectric into relaxor ferroelectric and vice versa. To this end relaxor ferroelectric Pb0.89La0.11(Zr0.7Ti0.3)0.9725O3 and antiferroelectric Pb0.93La0.07(Zr0.82Ti0.18)0.9825O3 ceramics were designed near the antiferroelectric-ferroelectric phase boundary line in the La2O3-PbZrO3-PbTiO3 phase diagram. Conventional solid state reaction processing was used to prepare the two compositions. The ECE properties were deduced from Maxwell relations and Landau-Ginzburg-Devonshire (LGD) phenomenological theory, respectively, and also directly controlled by a computer and measured by thermometry. Large electrocaloric efficiencies were obtained and comparable with the results calculated via the phenomenological theory. Results show great potential in achieving large cooling power as refrigerants. PMID:28345655

  15. Lattice-based Monte Carlo simulations of the electrocaloric effect in ferroelectrics and relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ma, Yang-Bin; Albe, Karsten; Xu, Bai-Xiang

    2015-05-01

    Canonical and microcanonical Monte Carlo simulations are carried out to study the electrocaloric effect (ECE) in ferroelectrics and relaxor ferroelectrics (RFEs) by direct computation of field-induced temperature variations at the ferroelectric-to-paraelectric phase transition and the nonergodic-to-ergodic state transformation. A lattice-based Hamiltonian is introduced, which includes a thermal energy, a Landau-type term, a dipole-dipole interaction energy, a gradient term representing the domain-wall energy, and an electrostatic energy contribution describing the coupling to external and random fields. The model is first parametrized and studied for the case of BaTiO3. Then, the ECE in RFEs is investigated, with particular focus on the influence of random fields and domain-wall energies. If the strength or the density of the random fields increases, the ECE peak shifts to a lower temperature but the temperature variation is reduced. On the contrary, if the domain-wall energy increases, the peak shifts to a higher temperature and the ECE becomes stronger. In RFEs, the ECE is maximum at the freezing temperature where the nonergodic-to-ergodic transition takes place. Our results imply that the presence of random fields reduces the entropy variation in an ECE cycle by pinning local polarization.

  16. Electronic characterization of polar nanoregions in relaxor-type ferroelectric NaNbO3 films

    NASA Astrophysics Data System (ADS)

    Cai, Biya; Schwarzkopf, J.; Hollmann, E.; Braun, D.; Schmidbauer, M.; Grellmann, T.; Wördenweber, R.

    2016-06-01

    Strained NaNbO3 films of different thicknesses are epitaxially grown on (110) NdGaO3 substrates. A detailed analysis of the permittivity of these films demonstrates that strain not only leads to a modification of the permittivity and the ferroelectric transition temperature, it also results in a pronounced relaxor-type behavior and allows a direct estimation of the size and mobility of the polar nanoregions (PNRs). The compressive strain reduces the transition temperature to 125 K and enhances the corresponding permittivity up to ɛ'≈1500 for the thinnest film. Since the strain relaxes with increasing film thickness, both effects, reduction of phase transition temperature and enhancement of ɛ', depend on the thickness of the film. The films show a characteristic frequency and electric field dependence of ɛ', which is discussed in terms of the Vogel-Fulcher equation and Rayleigh law, respectively. Using the electric field dependence of the resulting freezing temperature TVF, allows a direct estimation of the volume of the PNRs at the freezing temperature, i.e. from 70 to 270 n m3 . Assuming an idealized spherical shape of the PNRs, diameters of a few nanometers (5.2-8 nm) are determined that depend on the applied ac electric field. The irreversible part of the polarization seems to be dominated by the presence and mobility of the PNRs. It shows a characteristic peak at low temperature around TVF, vanishes at a temperature where the activation energy of the PRNs extrapolates to zero, and shows a frequency dispersion that is characteristic for relaxor-type behavior.

  17. BaZr0.5Ti0.5O3 : Lead-free relaxor ferroelectric or dipolar glass

    NASA Astrophysics Data System (ADS)

    Filipič, C.; Kutnjak, Z.; Pirc, R.; Canu, G.; Petzelt, J.

    2016-06-01

    Glassy freezing dynamics was investigated in BaZr0.5Ti0.5O3 (BZT50) ceramic samples by means of dielectric spectroscopy in the frequency range 0.001 Hz-1 MHz at temperatures 10 ferroelectric state cannot be induced, in contrast to the case of typical relaxors. This suggests that—at least for the above field amplitudes—BZT50 effectively behaves as a dipolar glass, which can be characterized by a negative value of the static third order nonlinear permittivity. The relaxation spectrum has been analyzed by means of the frequency-temperature plot, which shows that the longest relaxation time obeys the Vogel-Fulcher relation τ =τ0exp [E0/(T -T0) ] with the freezing temperature of 48.1 K, whereas the corresponding value for the shortest relaxation time is ˜0 K, implying an Arrhenius type behavior. By applying a standard expression for the static linear permittivity of dipolar glasses and/or relaxors the value of the Edwards-Anderson order parameter q (T ) has been evaluated. It is further shown that q (T ) can be described by the spherical random bond-random field model of relaxors.

  18. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    PubMed Central

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; Parshall, Daniel E.; Lynn, Jeffrey W.; Christianson, Andrew D.; Stonaha, Paul J.; Specht, Eliot D.; Budai, John D.

    2016-01-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarization rotations in relaxor-based ferroelectric PMN-xPT {(1 − x)[Pb(Mg1/3Nb2/3)O3] – xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening. PMID:27652338

  19. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    DOE PAGES

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; ...

    2016-09-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarizationmore » rotations in relaxor-based ferroelectric PMN-xPT {(1 x)[Pb(Mg1/3Nb2/3)O3] xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening.« less

  20. Giant electromechanical coupling of relaxor ferroelectrics controlled by polar nanoregion vibrations

    SciTech Connect

    Manley, Michael E.; Abernathy, Douglas L.; Sahul, Raffi; Parshall, Daniel E.; Lynn, Jeffrey W.; Christianson, Andrew D.; Stonaha, Paul J.; Specht, Eliot D.; Budai, John D.

    2016-09-01

    Relaxor-based ferroelectrics are prized for their giant electromechanical coupling and have revolutionized sensor and ultrasound applications. A long-standing challenge for piezoelectric materials has been to understand how these ultrahigh electromechanical responses occur when the polar atomic displacements underlying the response are partially broken into polar nanoregions (PNRs) in relaxor-based ferroelectrics. Given the complex inhomogeneous nanostructure of these materials, it has generally been assumed that this enhanced response must involve complicated interactions. By using neutron scattering measurements of lattice dynamics and local structure, we show that the vibrational modes of the PNRs enable giant coupling by softening the underlying macrodomain polarization rotations in relaxor-based ferroelectric PMN-xPT {(1 x)[Pb(Mg1/3Nb2/3)O3] xPbTiO3} (x = 30%). The mechanism involves the collective motion of the PNRs with transverse acoustic phonons and results in two hybrid modes, one softer and one stiffer than the bare acoustic phonon. The softer mode is the origin of macroscopic shear softening. Furthermore, a PNR mode and a component of the local structure align in an electric field; this further enhances shear softening, revealing a way to tune the ultrahigh piezoelectric response by engineering elastic shear softening.

  1. Thickness Dependent Properties of Relaxor-PbTiO(3) Ferroelectrics for Ultrasonic Transducers.

    PubMed

    Lee, Hyeong Jae; Zhang, Shujun; Luo, Jun; Li, Fei; Shrout, Thomas R

    2010-09-23

    The electrical properties of Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT) based polycrystalline ceramics and single crystals were investigated as a function of scale ranging from 500 microns to 30 microns. Fine-grained PMN-PT ceramics exhibited comparable dielectric and piezoelectric properties to their coarse-grained counterpart in the low frequency range (<10 MHz), but offered greater mechanical strength and improved property stability with decreasing thickness, corresponding to higher operating frequencies (>40 MHz). For PMN-PT single crystals, however, the dielectric and electromechanical properties degraded with decreasing thickness, while ternary Pb(In(1/2)Nb(1/2))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) exhibited minimal size dependent behavior. The origin of property degradation of PMN-PT crystals was further studied by investigating the dielectric permittivity at high temperatures, and domain observations using optical polarized light microscopy. The results demonstrated that the thickness dependent properties of relaxor-PT ferroelectrics are closely related to the domain size with respect to the associated macroscopic scale of the samples.

  2. Resonant ultrasonic spectroscopy of KTa1-xNbxO3 ferroelectric relaxor crystals

    SciTech Connect

    Svitelskiy, O.; Headley, S.; Suslov, A. V.; Migliori, A.; Yong, G.; Boatner, Lynn A

    2008-08-01

    The influence of the development of a ferroelectric state on the elastic properties of KTa1-xNbxO3 relaxor crystals is explored. The high sensitivity of all elements of the elastic stiffness tensor to the polar distortions and their reorientational dynamics is, however, individual for each particular element: c11 and c44 are pimarily influenced by the reorientational motion of these distortions between neighboring (111) directions; the c12 mostly depends on the reorientations between cubic face diagonal (111) directions. Consequently, the temperature behavior of c12 demonstrates different dependence on the Nb concentration than that of c11 and c44. While in the 1.2% Nb crystal all three elastic constants clearly show their softening with the appearance of the dynamic polar distortions; in the 16% crystal this effect is strong for c11 and c44, but negligible for c12. The curves of slowness and Young's modulus within (100) crystallographic plane are presented. The linear compressibility modulus is estimated. The value of the Debye temperature is estimated to be approximately 592 K.

  3. Direct evidence of correlations between relaxor behavior and polar nano-regions in relaxor ferroelectrics: A case study of lead-free piezoelectrics Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-x%BaTiO{sub 3}

    SciTech Connect

    Ge, Wenwei Luo, Chengtao; Devreugd, Christopher P.; Li, Jiefang; Viehland, D.; Zhang, Qinhui; Luo, Haosu; Ren, Yang

    2013-12-09

    Diffuse scattering and relaxor behavior in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} (NBT) and NBT-5.6 at. %BaTiO{sub 3} (NBT-5.6%BT) were investigated. X-ray diffraction revealed two types of diffuse scattering in NBT: (i) broad and (ii) asymmetric L-shaped. After modification with 5.6%BT, the broad diffuse scattering patterns became narrow, and the asymmetric L-shaped ones were replaced by symmetric ones. The symmetric diffuse scattering in NBT-5.6%BT disappeared with increasing dc electric field (E) for E ≥ 9.5 kV/cm where the frequency dispersion in the dielectric constant disappeared. These results demonstrate that the relaxor characteristics are directly correlated with the diffuse scattering and the presence polar nano-regions.

  4. Nanostructure, Defect Chemistry and Properties of Relaxor Ferroelectrics

    DTIC Science & Technology

    1992-02-01

    frequency (w=2wf). a Frequency of an emitted phonon. ODM Optical Diffractometry. 01I t An oxygen atom in an interstitial site. Oo An oxygen atom on an oxygen...Zhang, X.W., et.al., 1990a). From a simple perovskite e.g. PbTiO3 (PT) to a complex compound e.g. PMN, a ferroelectric phase is maintained over the entire...threshold energy h = Eg ± hiO, where 0 is the frequency of an emitted phonon. The hw can be large or smaller than Eg depending on the temperature

  5. High performance relaxor-based ferroelectric single crystals for ultrasonic transducer applications.

    PubMed

    Chen, Yan; Lam, Kwok-Ho; Zhou, Dan; Yue, Qingwen; Yu, Yanxiong; Wu, Jinchuan; Qiu, Weibao; Sun, Lei; Zhang, Chao; Luo, Haosu; Chan, Helen L W; Dai, Jiyan

    2014-07-29

    Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33~2000 pC/N, kt~60%) near the morphotropic phase boundary (MPB). Ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc) and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed.

  6. Optimization of electrooptic and pieozoelectric coupling effects in tetragonal relaxor-PT ferroelectric single crystals.

    PubMed

    Sun, Enwei; Sang, Shijing; Yuan, Zhongyuan; Qi, Xudong; Zhang, Rui; Cao, Wenwu

    2015-08-15

    The electrooptic and piezoelectric coupling effects in tetragonal relaxor-based ferroelectric 0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3 (PMN-0.38PT) and 0.88Pb(Zn1/3Nb2/3)O3-0.12PbTiO3 (PZN-0.12PT) single-domain crystals have been analyzed by the coordinate transformation. The orientation dependence of the electrooptic and half-wave voltage was calculated based on the full sets of refractive indices, electrooptic and piezoelectric coefficients. The optimum orientation cuts for achieving the best electrooptic coefficient and half-wave voltage were found. The lowset half-wave voltage is only 76 V for the PMN-0.38PT single-domain crystal. Compared to commonly used electrooptic crystal LiNbO3, tetragonal relaxor-PT ferroelectric single-domain crystals are much superior for optical modulation applications because of their much higher linear electrooptic coefficients and substantially lower half-wave voltages when the piezoelectric strain influence is considered.

  7. Optimization of electrooptic and pieozoelectric coupling effects in tetragonal relaxor-PT ferroelectric single crystals

    PubMed Central

    Sun, Enwei; Sang, Shijing; Yuan, Zhongyuan; Qi, Xudong; Zhang, Rui; Cao, Wenwu

    2015-01-01

    The electrooptic and piezoelectric coupling effects in tetragonal relaxor-based ferroelectric 0.62Pb(Mg1/3Nb2/3)O3-0.38PbTiO3 (PMN-0.38PT) and 0.88Pb(Zn1/3Nb2/3)O3-0.12PbTiO3 (PZN-0.12PT) single-domain crystals have been analyzed by the coordinate transformation. The orientation dependence of the electrooptic and half-wave voltage was calculated based on the full sets of refractive indices, electrooptic and piezoelectric coefficients. The optimum orientation cuts for achieving the best electrooptic coefficient and half-wave voltage were found. The lowset half-wave voltage is only 76 V for the PMN-0.38PT single-domain crystal. Compared to commonly used electrooptic crystal LiNbO3, tetragonal relaxor-PT ferroelectric single-domain crystals are much superior for optical modulation applications because of their much higher linear electrooptic coefficients and substantially lower half-wave voltages when the piezoelectric strain influence is considered. PMID:25954059

  8. High Performance Relaxor-Based Ferroelectric Single Crystals for Ultrasonic Transducer Applications

    PubMed Central

    Chen, Yan; Lam, Kwok-Ho; Zhou, Dan; Yue, Qingwen; Yu, Yanxiong; Wu, Jinchuan; Qiu, Weibao; Sun, Lei; Zhang, Chao; Luo, Haosu; Chan, Helen L. W.; Dai, Jiyan

    2014-01-01

    Relaxor-based ferroelectric single crystals Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) have drawn much attention in the ferroelectric field because of their excellent piezoelectric properties and high electromechanical coupling coefficients (d33∼2000 pC/N, kt∼60%) near the morphotropic phase boundary (MPB). Ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) single crystals also possess outstanding performance comparable with PMN-PT single crystals, but have higher phase transition temperatures (rhombohedral to tetragonal Trt, and tetragonal to cubic Tc) and larger coercive field Ec. Therefore, these relaxor-based single crystals have been extensively employed for ultrasonic transducer applications. In this paper, an overview of our work and perspectives on using PMN-PT and PIN-PMN-PT single crystals for ultrasonic transducer applications is presented. Various types of single-element ultrasonic transducers, including endoscopic transducers, intravascular transducers, high-frequency and high-temperature transducers fabricated using the PMN-PT and PIN-PMN-PT crystals and their 2-2 and 1-3 composites are reported. Besides, the fabrication and characterization of the array transducers, such as phased array, cylindrical shaped linear array, high-temperature linear array, radial endoscopic array, and annular array, are also addressed. PMID:25076222

  9. Structure and properties of Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–0.2PbTiO{sub 3} relaxor ferroelectric crystal

    SciTech Connect

    Liu, Ying; Yang, Xiaoming; Lai, Fachun; Huang, Zhigao; Li, Xiuzhi; Wang, Zujian; He, Chao; Lin, Ju; Long, Xifa

    2015-07-15

    Graphical abstract: The relaxor state of the crystal was demonstrated by the dielectric behavior. - Highlights: • PLN–0.2PT ferroelectric crystal was obtained by the TSSG technique. • The super-lattice reflections were identified by XRD and TEM results. • The PLN–0.2PT crystal is a typical relaxor ferroelectric. - Abstract: Ferroelectric crystal Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–0.2PbTiO{sub 3} (PLN–0.2PT) was successfully obtained by a top-seed solution growth technique. At room temperature the symmetry was orthorhomic according to X-ray diffraction (XRD). The super-lattice reflections were identified by XRD and transmission electron microscope (TEM). The micro-domain structure was detected by TEM. The temperature dependence of the dielectric constant (ϵ′) shows a typical relaxor behavior. The temperature dependence of coercive electric field and remnant polarizations were investigated, which also shows the relaxor feature.

  10. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications.

    PubMed

    Sun, Enwei; Cao, Wenwu

    2014-08-01

    In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-x Ti x O3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe "PureWave". The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery

  11. Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications

    PubMed Central

    Sun, Enwei; Cao, Wenwu

    2014-01-01

    In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT), (1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 (PZN-PT) and (1-x-y)Pb(In1/2Nb1/2)O3-yPb(Mg1/3Nb2/3)O3-xPbTiO3 (PIN-PMN-PT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1-xTixO3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from < 70% to > 90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, domain pattern symmetries, etc., have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN-PT single crystals to the commercial production of the high-end ultrasonic imaging probe “PureWave”. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN-PMN-PT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery

  12. Relaxor ferroelectric-based electrocaloric polymer nanocomposites with a broad operating temperature range and high cooling energy.

    PubMed

    Li, Qi; Zhang, Guangzu; Zhang, Xiaoshan; Jiang, Shenglin; Zeng, Yike; Wang, Qing

    2015-04-01

    Electrocaloric nanocomposites simultaneously derive high electrocaloric strength from inorganic inclusions and high dielectric strength from the polymer matrix to display a pronounced electrocaloric effect (ECE). By designing the inorganic filler and polymer matrix, which are both relaxor ferroelectrics with the ambient-temperature phase transition and minimized hysteresis, a large ECE becomes accessible with high cooling efficiency over a broad temperature range at and near room temperature.

  13. Anomalous negative electrocaloric effect in a relaxor/normal ferroelectric polymer blend with controlled nano- and meso-dipolar couplings

    NASA Astrophysics Data System (ADS)

    Qian, Xiaoshi; Yang, Tiannan; Zhang, Tian; Chen, Long-Qing; Zhang, Q. M.

    2016-04-01

    In general, a dielectric material will eject (or absorb) heat when an electric field is applied and absorb (or eject) heat when the field is removed, under isothermal condition, which is known as the normal (or negative) electrocaloric (EC) effect. For some applications, it is highly desired that an EC material will absorb heat (cooling the surrounding) without subsequent heating under an electric pulse. Here, we show that such an EC material can be realized in a properly designed hybrid normal ferroelectric/relaxor ferroelectric polymer blend in which the normal ferroelectric component induces dipole ordering in the relaxor polymer in the poled state, which can be switched to a de-poled state by an external field. More importantly, the de-poled state can be maintained by the relaxor component when the de-poling field is removed. Consequently, the hybrid blend exhibits a large cooling (an isothermal entropy change ΔS = 11.5 J kg-1 K-1) without the subsequent heating upon the application of an electric pulse.

  14. Polarization-based perturbations to thermopower and electronic conductivity in highly conductive tungsten bronze structured (Sr,Ba)Nb2O6: Relaxors vs normal ferroelectrics

    NASA Astrophysics Data System (ADS)

    Bock, Jonathan A.; Trolier-McKinstry, Susan; Mahan, Gerald D.; Randall, Clive A.

    2014-09-01

    Electrical conductivity, thermopower, and lattice strain were investigated in the tetragonal tungsten bronze structured (Srx,Ba1-x)Nb2O6-δ system for 0.7>x>0.4 with large values of δ. These materials show attractive thermoelectric characteristics, especially in single-crystal form. Here, the Sr/Ba ratio was changed in order to vary the material between a normal ferroelectric with long-range polarization to relaxor behavior with short-range order and dynamic polarization. The influence of this on the electrical conduction mechanisms was then investigated. The temperature dependence of both the thermopower and differential activation energy for conduction suggests that the electronic conduction is controlled by an impurity band with a mobility edge separating localized and delocalized states. Conduction is controlled via hopping at low temperatures, and as temperature rises electrons are activated above the mobility edge, resulting in a large increase in electrical conductivity. For relaxor ferroelectric-based compositions, when dynamic short-range order polarization is present in the system, trends in the differential activation energy and thermopower show deviations from this conduction mechanism. The results are consistent with the polarization acting as a source of disorder that affects the location of the mobility edge and, therefore, the activation energy for conduction.

  15. Temperature and pressure effects on elastic properties of relaxor ferroelectrics and thermoelectrics: A resonant ultrasound spectroscopy study

    NASA Astrophysics Data System (ADS)

    Tennakoon, Sumudu P.

    Relaxor ferroelectric lead magnesium niobate-lead titanate (PMN-PT) material exhibits exceptional electromechanical properties. The material undergoes a series of structural phase transitions with changes in temperature and the chemical composition. The work covered in this dissertation seek to gain insight into the phase diagram of PMN-PT using temperature and pressure dependence of the elastic properties. Single crystal PMN-PT with a composition near morphotropic phase boundary (MPB) was investigated using a resonant ultrasound spectroscopy (RUS) methodologies in the temperature range of 293 K - 800 K and the pressure range from near vacuum to 3.4 MPa. At atmospheric pressure, significantly high acoustic attenuation of PMN-PT is observed at temperatures below 400 K. A strong stiffening is observed in the temperature range of 400 K - 673 K, followed by a gradual softening at higher temperatures. With varying pressure, an increased pressure sensitivity of the elastic properties of PMN-PT is observed at the temperatures in the stiffening phase. Elastic behavior at elevated temperatures and pressures were studied for correlations with the ferroelectric domains at temperatures below the Curie temperature (TC), the locally polarized nano-regions, and an existence of pseudo-cubic crystalline at higher temperatures between (TC and TB). Thermoelectric lanthanum tellurides and skutterudites are being investigated by NASA's Jet Propulsion Laboratory for advanced thermoelectric generates (TEGs). Effects of nickel (Ni) doping on elastic properties of lanthanum tellurides at elevated temperatures were investigated in the temperature range of 293 K - 800 K. A linear stiffening was observed with increasing the Ni content in the material. Elastic properties of p-type and n-type bismuth-based skutterudites were investigated in the temperature range of 293 K - 723 K. Elastic properties of rare-earth doped strontium titanate were also investigated in the temperature range of 293 K

  16. Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

    NASA Astrophysics Data System (ADS)

    Manley, M. E.; Abernathy, D. L.; Sahul, R.; Stonaha, P. J.; Budai, J. D.

    2016-09-01

    A longstanding controversy for relaxor ferroelectrics has been the origin of the "waterfall" effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the "waterfall" wave vector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014), 10.1038/ncomms4683], we have reexamined this feature using neutron scattering on [100]-poled PMN-30%PT [0.6 Pb (M g1 /3N b2 /3 ) O3-0.3 PbTi O3] . We find that the PNR mode couples to both optic and acoustic phonons and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.

  17. Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

    NASA Astrophysics Data System (ADS)

    Nagata, Takahiro; Kumaragurubaran, Somu; Tsunekawa, Yoshifumi; Yamashita, Yoshiyuki; Ueda, Shigenori; Takahashi, Kenichiro; Ri, Sung-Gi; Suzuki, Setsu; Oh, Seungjun; Chikyow, Toyohiro

    2016-06-01

    The interface stability between electrodes (Pt, TaC, TiC, and RuO2) and a Bi-containing relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), applied to a high-temperature operational capacitor was investigated by hard X-ray photoelectron spectroscopy. All the electrodes showed electron filling at the Fermi level after annealing at 400 °C. However, Pt and TaC indicated electrical property degradations due to the thick intermediate layer formation and defect formation of the BT-BMN layer relating to the Bi diffusion into the electrodes. In contrast, TiC inhibited the Bi diffusion and did not show any change in the band alignment after annealing. Furthermore, RuO2 eliminated the defect formation in BT-BMN and showed no change in the band alignment although the Bi diffusion was also observed. These results suggest that the TiC/RuO2/BT-BMN stack structure is a potential candidate for the high-temperature operational capacitor.

  18. Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

    DOE PAGES

    Manley, M. E.; Abernathy, D. L.; Sahul, R.; ...

    2016-09-22

    A long-standing controversy for relaxor ferroelectrics has been the origin of the waterfall effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the waterfall wavevector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014)] we have reexamined this feature using neutronmore » scattering on [100]-poled PMN-30%PT (0.6Pb(Mg1/3Nb2/3)O3 0.3PbTiO3). In addition, we find that the PNR mode couples to both optic and acoustic phonons, and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.« less

  19. Three-mode coupling interference patterns in the dynamic structure factor of a relaxor ferroelectric

    SciTech Connect

    Manley, M. E.; Abernathy, D. L.; Sahul, R.; Stonaha, P. J.; Budai, J. D.

    2016-09-22

    A long-standing controversy for relaxor ferroelectrics has been the origin of the waterfall effect in the phonon dispersion curves, in which low-energy transverse phonons cascade into vertical columns. Originally interpreted as phonons interacting with polar nanoregions (PNRs), it was later explained as an interference effect of coupling damped optic and acoustic phonons. In light of a recently discovered PNR vibrational mode near the waterfall wavevector [M. E. Manley, J. W. Lynn, D. L. Abernathy, E. D. Specht, O. Delaire, A. R. Bishop, R. Sahul, and J. D. Budai, Nat. Commun. 5, 3683 (2014)] we have reexamined this feature using neutron scattering on [100]-poled PMN-30%PT (0.6Pb(Mg1/3Nb2/3)O3 0.3PbTiO3). In addition, we find that the PNR mode couples to both optic and acoustic phonons, and that this results in complex patterns in the dynamic structure factor, including intensity pockets and peaks localized in momentum-energy space. These features are fully explained by extending the mode-coupling model to include three coupled damped harmonic oscillators representing the transverse optic, acoustic, and PNR modes.

  20. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor-ferroelectric ceramic composites

    NASA Astrophysics Data System (ADS)

    Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; Okatan, B.; Jesse, S.; Kalinin, S. V.; Groh, C.; Rödel, J.; Lupascu, D. C.

    2016-01-01

    Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. Nonetheless, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. We report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. Our results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. Nonetheless, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. We report a different set of switching parameters for grains in the

  1. Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

    NASA Astrophysics Data System (ADS)

    Dusch, Yannick; Tiercelin, Nicolas; Klimov, Alexey; Giordano, Stefano; Preobrazhensky, Vladimir; Pernod, Philippe

    2013-05-01

    We present here the implementation of a magnetoelectric memory with a voltage driven writing method using a ferroelectric relaxor substrate. The memory point consists of a magnetoelastic element in which two orthogonal stable magnetic states are defined by combining uni-axial anisotropy together with a magnetic polarization in the hard axis direction. Using a ferroelectric relaxor substrate, an anisotropic stress is created in the magnetic element when applying a voltage across electrodes. Because of the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other.

  2. Enhanced dielectric constant and relaxor behavior realized by dual stage sintering of Sr0.5Ba0.5Nb2O6

    NASA Astrophysics Data System (ADS)

    Rathore, Satyapal S.; Vitta, Satish

    2014-04-01

    The relaxor ferroelectric compound, Sr0.5Ba0.5Nb2O6 (SBN50) was synthesized by solid state reaction followed by sintering under two different conditions: single and dual stage sintering. The impact of sintering process on structural and dielectric properties has been studied in detail using X-ray diffraction, scanning electron microscopy and broadband dielectric spectroscopy. The crystal structure determined by performing Rietveld refinement of X-ray diffractogram was found to be identical in both cases. SBN50 crystallizes in the ferroelectric tetragonal tungsten bronze, P4bm structure. It was observed that uniform grain growth can be controlled by dual stage sintering and relatively narrow distribution of grains can be achieved with an average grain size of ˜15 μm. The dielectric studies show that SBN50 exhibits a relaxor ferroelectric behavior with the transformation taking place at ˜ 380 K due to formation of polar nano regions. Although both single and dual stage sintered SBN50 exhibits relaxor behaviour, the maximum dielectric constant of dual stage sintered SBN50 is found to be 1550 compare to 1440 for single stage sintering.

  3. Structural effects behind the low temperature nonconventional relaxor behavior of the Sr2NaNb5O15 bronze.

    PubMed

    Torres-Pardo, Almudena; Jiménez, Ricardo; González-Calbet, José M; García-González, Ester

    2011-12-05

    An exhaustive temperature dependent structural and dielectric study of the tetragonal tungsten bronze-type Sr(2)NaNb(5)O(15) (SNN) compound has been performed in the 300-100 K temperature range, by combining X-ray, neutron diffraction, and transmission electron microscopy with dielectric measurements, in order to clarify the structural effects responsible for the observed low temperature dielectric properties. Interestingly, a relevant second anomaly in the dielectric constant, in addition to the ferroelectric (FE) to paraelectric (PE) transition at T(C) = 518 K is found at T ≈ 240 K, revealing a relaxor-like behavior of the material at low temperature. This phenomenon has been previously observed in FE perovskite-type phases and referred to as the re-entrant phenomenon. However, FE polarization tends to vanish below this low temperature dielectric anomaly and this fact is not expected for a classical relaxor-ferroelectric phase. Although there is no structural transition from RT to 100 K, there is a change in the elastic properties of the material in the considered temperature range and the intense anomaly at ~240 K could be associated to a smeared-out phase transition to a frustrated FE/ferroelastic (FEL) low temperature state in correlation with subtle structural effects.

  4. Ferroic superglasses: Polar nanoregions in relaxor ferroelectric PMN versus CoFe superspins in a discontinuous multilayer

    NASA Astrophysics Data System (ADS)

    Kleemann, Wolfgang; Dec, Jan

    2016-11-01

    Superdipolar glass properties of polar nanoregions (PNRs) in relaxor ferroelectric PbM g1 /3N b2 /3O3 (PMN) are compared to those of ferromagnetic nanoparticles (FNPs) in the superspin glass [Co80Fe20(0.9 nm ) /A l2O3(3 nm ) ] 10. Both the dynamic critical properties at T >Tg and nonergodicity phenomena at T ferroelectric microdomain state under the simultaneous control by quenched random electric fields and the softening ferroelectric F1 u lattice mode.

  5. Subterahertz dielectric relaxation in lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

    NASA Astrophysics Data System (ADS)

    Wang, D.; Bokov, A. A.; Ye, Z.-G.; Hlinka, J.; Bellaiche, L.

    2016-04-01

    Relaxors are complex materials with unusual properties that have been puzzling the scientific community since their discovery. The main characteristic of relaxors, that is, their dielectric relaxation, remains unclear and is still under debate. The difficulty to conduct measurements at frequencies ranging from ~=1 GHz to ~=1 THz and the challenge of developing models to capture their complex dynamical responses are among the reasons for such a situation. Here, we report first-principles-based molecular dynamic simulations of lead-free Ba(Zr0.5Ti0.5)O3, which allows us to obtain its subterahertz dynamics. This approach reproduces the striking characteristics of relaxors including the dielectric relaxation, the constant-loss behaviour, the diffuse maximum in the temperature dependence of susceptibility, the substantial widening of dielectric spectrum on cooling and the resulting Vogel-Fulcher law. The simulations further relate such features to the decomposed dielectric responses, each associated with its own polarization mechanism, therefore, enhancing the current understanding of relaxor behaviour.

  6. Diffused phase transition and relaxor behavior in Pb(Fe2/3W1/3)O3 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Ashok; Murari, N. M.; Katiyar, R. S.

    2007-04-01

    The authors have synthesized Pb(Fe2/3W1/3)O3 thin films on Pt /Ti/SiO2/Si(100) substrates utilizing chemical solution deposition method. The dielectric relaxation was studied as a function of temperature (100-300K) and frequency (100Hz-1MHz). A broad range of dielectric maxima was found, which shifted towards higher temperature with increase in frequency. The relaxation indication coefficient (γ) and broadening parameter (Δ) were estimated from a linear fit of the modified Curie-Weiss law and were found to be 2.00 and 50K, respectively; indicating strong relaxor behavior. A remarkably good fit to Vogel-Fulcher relationship further supports the relaxor nature of the films. The slim hysteresis loop at low temperature is indicative of ferroelectricity due to the growth of nanopolar regions.

  7. Fracture behavior of ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Wei; Lupascu, Doru C.; Lynch, Christopher S.

    1999-06-01

    Piezoelectric actuators are key components in many smart structures applications. Long term reliability of these actuators becomes increasingly important as research makes the transition to commercial applications. Fracture toughness is a material parameter that measures a material's resistance to crack propagation. This is perhaps, one of the most important parameters for reliable device design. This paper reviews recent work by the authors on fracture behavior of ferroelectric ceramics. Vickers indentation data were used to determine the fracture toughness of a coarse and a fine grained PZT and two compositions of PLZT. R-curve data were obtained for two compositions of PLZT. The R-curve data presented here were generated using four point bend specimens with controlled surface flaws. The R-curve results compare favorably with the Vickers indentation data. A comparison of the R-curves for a ferroelectric composition of PLZT and a quadratic electrostrictive composition of PLZT demonstrate the contribution of domain reorientation to the toughening process.

  8. Blockage of domain growth by nanoscale heterogeneities in a relaxor ferroelectric Sr0.61Ba0.39Nb2O6

    NASA Astrophysics Data System (ADS)

    Pertsev, N. A.; Gainutdinov, R. V.; Bodnarchuk, Ya. V.; Volk, T. R.

    2015-01-01

    The growth of localized subsurface domains in a relaxor ferroelectric Sr0.61Ba0.39Nb2O6 is studied using the technique of piezoresponse force microscopy (PFM). Ferroelectric domains are created by applying moderate voltages of 10-50 V to the conductive tip of a scanning force microscope brought into contact with a nonpolar face of a Sr0.61Ba0.39Nb2O6 crystal. PFM images of written domains are acquired and analyzed quantitatively to determine the domain length along the polar axis and its width in the transverse direction. The dependences of domain sizes on the applied voltage, pulse duration, and the time passed after completion of the voltage pulse are reported and analyzed theoretically. It is shown that the observed kinetics of domain growth can be explained by the creep of domain boundaries occurring in the presence of random electric fields inherent in Sr0.61Ba0.39Nb2O6. The comparison of measured domain sizes with their equilibrium values calculated with the aid of the thermodynamic theory demonstrates that the growth of subsurface domains in Sr0.61Ba0.39Nb2O6 is blocked by nanoscale heterogeneities characteristic of this relaxor ferroelectric. These results may have important implications for the development of nonlinear optical devices based on nanoheterogeneous ferroelectrics.

  9. Martensitelike spontaneous relaxor-normal ferroelectric transformation in Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 system

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; Ding, Aili; Li, Guorong; Zheng, Xinsen; Cheng, Wenxiu; Qiu, Pingsun; Yin, Qingrui

    2005-11-01

    The spontaneous relaxor-normal ferroelectric transformation was found in the tetragonal composition of Pb(Zn1/3Nb2/3)O3-PbLa(ZrTi)O3 (0.3PZN-0.7PLZT) complex ABO3 system. The corresponding dielectric permittivities and losses of different compositions located near the morphotrophic phase boundary were analyzed. By reviewing all of the results about this type of transformation in previous references, the electric, compositional, structural, and thermodynamic characteristics of the spontaneous relaxor-normal transformation were proposed. Additionally, the adaptive phase model for martensite transformation proposed by Khachaturyan et al. [Phys. Rev. B 43, 10832 (1991)] was introduced into this ferroelectric transformation to explain the unique transformation pathway and associated features such as the tweedlike domain patterns and the dielectric dispersion under the critical transition temperature. Due to the critical compositions near the MPB, the ferroelectric materials just fulfill the condition, in which the adaptive phases can form in the transformation procedure. The formation of the adaptive phases, which are composed of stress-accommodating twinned domains, makes the system bypass the energy barrier encountered in conventional martensite transformations. The twinned adaptive phase corresponds to the tweedlike domain pattern under a transmission electronic microscope. At lower temperature, these precursor phases transform into the conventional ferroelectric state with macrodomains by the movement of domain walls, which causes a weak dispersion in dielectric permittivity.

  10. Relaxor ferroelectricity and electric-field-driven structural transformation in the giant lead-free piezoelectric (Ba ,Ca ) (Ti ,Zr ) O3

    NASA Astrophysics Data System (ADS)

    Brajesh, Kumar; Tanwar, Khagesh; Abebe, Mulualem; Ranjan, Rajeev

    2015-12-01

    There is great interest in lead-free (B a0.85C a0.15 ) (T i0.90Z r0.10 ) O3 (15/10BCTZ) because of its exceptionally large piezoelectric response [Liu and Ren, Phys. Rev. Lett. 103, 257602 (2009), 10.1103/PhysRevLett.103.257602]. In this paper, we have analyzed the nature of: (i) crystallographic phase coexistence at room temperature, (ii) temperature- and field-induced phase transformation to throw light on the atomistic mechanisms associated with the large piezoelectric response of this system. A detailed temperature-dependent dielectric and lattice thermal expansion study proved that the system exhibits a weak dielectric relaxation, characteristic of a relaxor ferroelectric material on the verge of exhibiting a normal ferroelectric-paraelectric transformation. Careful structural analysis revealed that a ferroelectric state at room temperature is composed of three phase coexistences, tetragonal (P 4 m m )+ orthorhombic(Amm 2 )+rhombohedral(R 3 m ) . We also demonstrate that the giant piezoresponse is associated with a significant fraction of the tetragonal phase transforming to rhombohedral. It is argued that the polar nanoregions associated with relaxor ferroelectricity amplify the piezoresponse by providing an additional degree of intrinsic structural inhomogeneity to the system.

  11. Anisotropic phonon coupling in the relaxor ferroelectric (Na1/2Bi1/2)TiO3 near its high-temperature phase transition

    NASA Astrophysics Data System (ADS)

    Cai, Ling; Toulouse, Jean; Luo, Haosu; Tian, Wei

    2014-08-01

    The lead free relaxor Na1/2Bi1/2TiO3 (NBT) undergoes a structural cubic-to-tetragonal transition near 800 K which is caused by the cooperative rotations of O6 octahedra. These rotations are also accompanied by the displacements of the cations and the formation of the polar nanodomains (PNDs) that are responsible for the characteristic dielectric dispersion of relaxor ferroelectrics. Because of their intrinsic properties, spontaneous polarization, and lack of inversion symmetry, these PNDs are also piezoelectric and can mediate an interaction between polarization and strain or couple the optic and acoustic phonons. Because PNDs introduce a local tetragonal symmetry, the phonon coupling they mediate is found to be anisotropic. In this paper we present inelastic neutron scattering results on coupled transverse acoustic (TA) and transverse optic (TO) phonons in the [110] and [001] directions and across the cubic-tetragonal phase transition at TC˜800 K. The phonon spectra are analyzed using a mode coupling model. In the [110] direction, as in other relaxors and some ferroelectric perovskites, a precipitous drop of the TO phonon into the TA branch or "waterfall" is observed at a certain qwf˜0.14 r.l.u. In the [001] direction, the highly overdamped line shape can be fitted with closely positioned bare mode energies which are largely overlapping along the dispersion curves. Two competing lattice coupling mechanism are proposed to explain these observations.

  12. Phase competition and effect of chemical ordering in ferroelectric relaxor PbSc0.5Nb0.5O3 from first principles

    NASA Astrophysics Data System (ADS)

    Paściak, M.; Welberry, T. R.; Hlinka, J.

    2016-08-01

    We present results of first principles calculations for ferroelectric relaxor PbSc0.5Nb0.5O3. An ordered supercell with Sc and Nb atoms alternating in all directions (NaCl-like superstructure) has a ferroelectric ground state with R3 spacegroup. It is characterized by a tilt system a-a-a- as well as different sizes of adjacent oxygen octahedra. Analysis of phonon instabilities in cubic ? reveals similarity with an antiferroelectric PbZrO3. This is further confirmed by the fact that possibly antiferroelectric P21/b structure of PbSc0.5Nb0.5O3 (symmetry lowered from Pbam due to Sc/Nb superstructure) is energetically very close to the ground state. The ferroelectric order is shown to be less sensitive to deviations in the B-site distribution than the antiferroelectric one.

  13. Phonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary

    NASA Astrophysics Data System (ADS)

    Schneeloch, John A.; Xu, Zhijun; Winn, B.; Stock, C.; Gehring, P. M.; Birgeneau, R. J.; Xu, Guangyong

    2015-12-01

    We report neutron inelastic scattering experiments on single-crystal PbMg1 /3Nb2 /3O3 doped with 32% PbTiO3, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field E ∥ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to E weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to E weakens for energy transfers 4 ≤ℏ ω ≤9 meV. However, TA and TO phonons polarized perpendicular to E show no change. This anisotropic field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to E but not when polarized perpendicular to E . Our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.

  14. BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors

    NASA Astrophysics Data System (ADS)

    Kumaragurubaran, Somu; Nagata, Takahiro; Takahashi, Kenichiro; Ri, Sung-Gi; Tsunekawa, Yoshifumi; Suzuki, Setsu; Chikyow, Toyohiro

    2015-04-01

    The epitaxial growth of 0.6[BaTiO3]-0.4[Bi(Mg2/3Nb1/3)O3] (BT-BMN) relaxor ferroelectric thin-films on (100) Nb doped SrTiO3 substrates has been achieved and the structure is investigated for high-temperature capacitor applications. The post growth annealing decreases the oxygen vacancy and other defects in BT-BMN films, resulting in the enhancement of dielectric constant. An insertion of intermediate SrRuO3 layers as an electrode instead of Pt, sandwiching the film, is found to be more effective in enhancing the dielectric constant. A very high dielectric constant exceeding 400 was achieved from high-temperature annealed film and the film showed an excellent dielectric constant stability of below 11% in the temperature range of 80-400 °C. This will enable smaller, high-temperature tolerant, monolithically integrated thin-film capacitors on power semiconductor devices.

  15. Phonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary

    DOE PAGES

    John A. Schneeloch; Xu, Zhijun; Winn, B.; ...

    2015-12-28

    We report neutron inelastic scattering experiments on single-crystal PbMg1/3Nb2/3O3 doped with 32% PbTiO3, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field E∥ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to E weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to E weakens for energy transfers 4 ≤ ℏω ≤ 9 meV. However, TA and TO phonons polarized perpendicular to E show no change. This anisotropicmore » field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to E but not when polarized perpendicular to E. Lastly, our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.« less

  16. Phonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary

    SciTech Connect

    John A. Schneeloch; Xu, Zhijun; Winn, B.; Stock, C.; Gehring, P. M.; Birgeneau, R. J.; Xu, Guangyong

    2015-12-28

    We report neutron inelastic scattering experiments on single-crystal PbMg1/3Nb2/3O3 doped with 32% PbTiO3, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field E∥ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to E weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to E weakens for energy transfers 4 ≤ ℏω ≤ 9 meV. However, TA and TO phonons polarized perpendicular to E show no change. This anisotropic field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to E but not when polarized perpendicular to E. Lastly, our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.

  17. Evolution of structure, dielectric properties, and re-entrant relaxor behavior in Ba5LaxSm1-xTi3Nb7O30 (x = 0.1, 0.25, 0.5) tungsten bronze ceramics

    NASA Astrophysics Data System (ADS)

    Li, Kun; Li Zhu, Xiao; Qiang Liu, Xiao; Ming Chen, Xiang

    2013-07-01

    The effects of A site occupation on the structure, dielectric, and re-entrant relaxor behaviors were studied for Ba5LaxSm1-xTi3Nb7O30 (x = 0.1, 0.25, 0.5) tungsten bronze ceramics. The tetragonal tungsten bronze structure in space group P4bm was indicated for all compositions. The dielectric and ferroelectric properties were investigated over a broad temperature range. For all compositions, broad permittivity peaks with strong frequency dispersion were observed, where the peak points well fitted the Vogel-Fulcher relationship. The temperature dependency of ferroelectric hysteresis loops indicated the re-entrant relaxor behavior for all compositions: both the maximum and remanent polarization tended to decrease and vanish at low temperatures. In Ba5LaxSm1-xTi3Nb7O30, the re-entrant temperature (Tr) decreased with La-substitution, and the reduced remanent polarization at Tr (PTr) was determined. It seemed that the A1 site cation substitution exerted direct effects on the long-range ferroelectric order, and then the re-entrant relaxor behavior.

  18. Ergodicity reflected in macroscopic and microscopic field-dependent behavior of BNT-based relaxors

    SciTech Connect

    Dittmer, Robert; Jo, Wook Rödel, Jürgen; Gobeljic, Danka; Shvartsman, Vladimir V.; Lupascu, Doru C.; Jones, Jacob L.

    2014-02-28

    The effect of heterovalent B-site doping on ergodicity of relaxor ferroelectrics is studied using (1 − y)(0.81Bi{sub 1/2}Na{sub 1/2}TiO{sub 3}-0.19Bi{sub 1/2}K{sub 1/2}TiO{sub 3})-yBiZn{sub 1/2}Ti{sub 1/2}O{sub 3} (BNT-BKT-BZT) with y = (0.02;0.03;0.04) as a model system. Both the large- and small-signal parameters are studied as a function of electric field. The crystal structure is assessed by means of neutron diffraction in the initial state and after exposure to a high electric field. In order to measure ferroelastic domain textures, diffraction patterns of the poled samples are collected as a function of sample rotation angle. Piezoresponse force microscopy (PFM) is employed to probe the microstructure for polar regions at a nanoscopic scale. For low electric fields E < 2 kV·mm{sup −1}, large- and small-signal constitutive behavior do not change with composition. At high electric fields, however, drastic differences are observed due to a field-induced phase transition into a long-range ordered state. It is hypothesized that increasing BZT content decreases the degree of non-ergodicity; thus, the formation of long-range order is impeded. It is suggested that frozen and dynamic polar nano regions exist to a different degree, depending on the BZT content. This image is supported by PFM measurements. Moreover, PFM measurements suggest that the relaxation mechanism after removal of the bias field is influenced by surface charges.

  19. Enhanced dielectric constant and relaxor behavior realized by dual stage sintering of Sr{sub 0.5}Ba{sub 0.5}Nb{sub 2}O{sub 6}

    SciTech Connect

    Rathore, Satyapal S. Vitta, Satish

    2014-04-24

    The relaxor ferroelectric compound, Sr{sub 0.5}Ba{sub 0.5}Nb{sub 2}O{sub 6} (SBN50) was synthesized by solid state reaction followed by sintering under two different conditions: single and dual stage sintering. The impact of sintering process on structural and dielectric properties has been studied in detail using X-ray diffraction, scanning electron microscopy and broadband dielectric spectroscopy. The crystal structure determined by performing Rietveld refinement of X-ray diffractogram was found to be identical in both cases. SBN50 crystallizes in the ferroelectric tetragonal tungsten bronze, P4bm structure. It was observed that uniform grain growth can be controlled by dual stage sintering and relatively narrow distribution of grains can be achieved with an average grain size of ∼15 μm. The dielectric studies show that SBN50 exhibits a relaxor ferroelectric behavior with the transformation taking place at ∼ 380 K due to formation of polar nano regions. Although both single and dual stage sintered SBN50 exhibits relaxor behaviour, the maximum dielectric constant of dual stage sintered SBN50 is found to be 1550 compare to 1440 for single stage sintering.

  20. The effect of chemical variations on the structural polarity of relaxor ferroelectrics studied by resonance Raman spectroscopy.

    PubMed

    Rohrbeck, A; de la Flor, G; Aroyo, M I; Gospodinov, M; Bismayer, U; Mihailova, B

    2016-11-30

    Resonance Raman spectroscopy was applied to doped PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 relaxor ferroelectrics, to better understand the effect of composition disorder on the mesoscopic-scale polar order in complex perovskite-type (ABO3) ferroelectrics. The excitation photon energy used was 3.8 eV, which is slightly above the energy gap and corresponds to the maximum of the optical dielectric permittivity. Group-theory analysis reveals that the resonance Raman scattering (RRS) observed under these conditions is allowed only in polar crystal classes. Therefore, RRS is dominated by the atomic dynamics of nanoregions with coherent polar distortions, which considerably facilitates the comparison of polar order in various compounds. The results show that A-site doping (Ba(2+), Sr(2+), La(3+), Bi(3+)) has significantly stronger effect on the structural polarity than the introduction of a third element at the B site (Nb(5+) or Sn(4+) doped in PbSc0.5Ta0.5O3). The A-site substitution by cations that in contrast to Pb(2+) have isotropic outermost electron shells disturbs the system of lone-pair electrons, thus reducing the correlation length of coupled polar distortions and the strength of the electric field associated with the mean polarization of polar nanoregions. A-site doping with larger cations (Ba(2+)) augments the polar deformation of the individual BO6 octahedra due to local elastic fields. As a result, such A-site doping intensifies the initial structural polarity at high temperatures and prevails the enlargement of the polar fraction at low temperatures. A-site doping with smaller cations (Sr(2+), La(3+)), regardless if they are isovalent or aliovalent to Pb(2+), increases the correlation length of antiferrodistortive order (BO6 tilts), which in turn assists the development of double-perovskite structure with coherent local polar distortions. A-site doping with aliovalent cations (Bi(3+)) having the same outermost electron shell and ionic radius as the host A

  1. The effect of chemical variations on the structural polarity of relaxor ferroelectrics studied by resonance Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Rohrbeck, A.; de la Flor, G.; Aroyo, M. I.; Gospodinov, M.; Bismayer, U.; Mihailova, B.

    2016-11-01

    Resonance Raman spectroscopy was applied to doped PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 relaxor ferroelectrics, to better understand the effect of composition disorder on the mesoscopic-scale polar order in complex perovskite-type (ABO3) ferroelectrics. The excitation photon energy used was 3.8 eV, which is slightly above the energy gap and corresponds to the maximum of the optical dielectric permittivity. Group-theory analysis reveals that the resonance Raman scattering (RRS) observed under these conditions is allowed only in polar crystal classes. Therefore, RRS is dominated by the atomic dynamics of nanoregions with coherent polar distortions, which considerably facilitates the comparison of polar order in various compounds. The results show that A-site doping (Ba2+, Sr2+, La3+, Bi3+) has significantly stronger effect on the structural polarity than the introduction of a third element at the B site (Nb5+ or Sn4+ doped in PbSc0.5Ta0.5O3). The A-site substitution by cations that in contrast to Pb2+ have isotropic outermost electron shells disturbs the system of lone-pair electrons, thus reducing the correlation length of coupled polar distortions and the strength of the electric field associated with the mean polarization of polar nanoregions. A-site doping with larger cations (Ba2+) augments the polar deformation of the individual BO6 octahedra due to local elastic fields. As a result, such A-site doping intensifies the initial structural polarity at high temperatures and prevails the enlargement of the polar fraction at low temperatures. A-site doping with smaller cations (Sr2+, La3+), regardless if they are isovalent or aliovalent to Pb2+, increases the correlation length of antiferrodistortive order (BO6 tilts), which in turn assists the development of double-perovskite structure with coherent local polar distortions. A-site doping with aliovalent cations (Bi3+) having the same outermost electron shell and ionic radius as the host A-site Pb2+ cations leads to

  2. Relaxor Behavior and Dielectric Properties of Bi(Zn2/3Nb1/3)O3-Modified BaTiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Chen, Xiuli; Chen, Jie; Huang, Guisheng; Ma, Dandan; Fang, Lang; Zhou, Huanfu

    2015-12-01

    (1 - x)BaTiO3- xBi(Zn2/3Nb1/3)O3 [(1 - x)BT- xBZN, 0 ≤ x ≤ 0.2] ceramics were prepared via a conventional solid-state reaction method. X-ray diffraction (XRD) patterns and Raman spectra analysis show that the ceramics are tetragonal phase when x ≤ 0.02, and transform to pseudocubic phase as x ≥ 0.06. The temperature and frequency dependences of relative permittivity indicate a gradual crossover from a classic ferroelectric to relaxor ferroelectric. The dielectric relaxor behavior follows a modified Curie-Weiss law. The degree of the phase transition diffuseness ( γ) and the deviation from the Curie-Weiss law (Δ T_{{d}} ) increase to the maximum at x = 0.08, and subsequently decrease with further increasing x values, which associated with the appearance of polar nanoregions on account of the formation of random fields included local electric fields and elastic fields. Nevertheless, the random fields may decrease by reason of the interaction between the local electric fields and elastic fields.

  3. Effect of dead layer and strain on diffuse phase transition of PLZT relaxor thin films.

    SciTech Connect

    Tong, S.; Narayanan, M.; Ma, B.; Koritala, R. E.; Liu, S.; Balachandran, U.; Shi, D.

    2011-02-01

    Bulk relaxor ferroelectrics exhibit excellent permittivity compared to their thin film counterpart, although both show diffuse phase transition (DPT) behavior unlike normal ferroelectrics. To better understand the effect of dead layer and strain on the observed anomaly in the dielectric properties, we have developed relaxor PLZT (lead lanthanum zirconate titanate) thin films with different thicknesses and measured their dielectric properties as a function of temperature and frequency. The effect of dead layer on thin film permittivity has been found to be independent of temperature and frequency, and is governed by the Schottky barrier between the platinum electrode and PLZT. The total strain (thermal and intrinsic) in the film majorly determines the broadening, dielectric peak and temperature shift in the relaxor ferroelectric. The Curie-Weiss type law for relaxors has been further modified to incorporate these two effects to accurately predict the DPT behavior of thin film and bulk relaxor ferroelectrics. The dielectric behavior of thin film is predicted by using the bulk dielectric data from literature in the proposed equation, which agree well with the measured dielectric behavior.

  4. Effects of atomic short-range order on properties of the PbMg1 /3Nb2 /3O3 relaxor ferroelectric

    NASA Astrophysics Data System (ADS)

    Prosandeev, Sergey; Bellaiche, L.

    2016-11-01

    The effect of atomic short-range order on the macroscopic and microscopic properties of the prototype of relaxor ferroelectrics, that is, lead magnesium niobate Pb (Mg1 /3Nb2 /3) O3 (PMN), is studied via the combination of an annealing technique and a large-scale effective Hamiltonian method. The investigated short-range order gradually varies from the case of fully disordered solid solutions to the situation for which the first three nearest-neighboring shells of the B lattice of PMN adopt a rocksalt ordering between a sublattice made of pure Nb ions and a randomly distributed sublattice consisting of 2/3 of Mg and 1/3 of Nb. The characteristic temperatures of relaxor ferroelectrics (namely, the Burns, so-called T*, and depolarizing temperatures) significantly increase when strengthening this short-range chemical order, which is accompanied by an overall enhancement of the size of the polar nanoregions as well as of some antiferroelectric interactions. These results can be understood by the fact that chemical short-range order strongly modifies the internal electric fields felt by the Pb ions.

  5. Variation of Piezoelectric properties and mechanisms across the relaxor-like/Ferroelectric continuum in BiFeO3- (K0.5Bi0.5)TiO3-PbTiO3 ceramics.

    PubMed

    Bennett, James; Shrout, Thomas R; Zhang, Shujun; Owston, Heather E; Stevenson, Tim J; Esat, Faye; Bell, Andrew J; Comyn, T P

    2015-01-01

    1- x - y)BiFeO3-x(K0.5Bi0.5)TiO3-yPbTiO3 (BFKBT- PT) piezoelectric ceramics were investigated across the compositional space and contrasted against the xBiFeO3- (1-x)(K0.5Bi0.5)TiO3 (BF-KBT) system, whereby a range of relaxor-like/ferroelectric behavior was observed. Structural and piezoelectric properties were closely related to the PbTiO3 concentration; below a critical concentration, relaxor-like behavior was identified. The mechanisms governing the piezoelectric behavior were investigated with structural, electrical, and imaging techniques. X-ray diffraction established that longrange non-centrosymmetric crystallographic order was evident above a critical PbTiO3 concentration, y > 0.1125. Commensurate with the structural analysis, electric-field-induced strain responses showed electrostrictive behavior in the PbTiO3-reduced compositions, with increased piezoelectric switching in PbTiO3-rich compositions. Positive-up-negative-down (PUND) analysis was used to confirm electric-field-induced polarization measurements, elucidating that the addition of PbTiO3 increased the switchable polarization and ferroelectric ordering. Piezoresponse force microscopy (PFM) of the BF-KBT-PT system exhibited typical domain patterns above a critical PbTiO3 threshold, with no ferroelectric domains observed in the BF-KBT system in the pseudocubic region. Doping of BiFeO3-PbTiO3 has been unsuccessful in the search for hightemperature materials that offer satisfactory piezoelectric properties; however, this system demonstrates that the partial substitution of alternative end-members can be an effective method. The partial substitution of PbTiO3 into BF-KBT enables long-range non-centrosymmetric crystallographic order, resulting in increased polar order and TC, compared with the pseudocubic region. The search for novel high-temperature piezoelectric ceramics can therefore exploit the accommodating nature of the perovskite family, which allows significant variance in chemical and physical

  6. Novel optically active lead-free relaxor ferroelectric (Ba0.6Bi0.2Li0.2)TiO3

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Rao, Vaibhav; Dutta, Soma; Barvat, Arun; Pal, Prabir; Tomar, M.; Gupta, Vinay; Scott, J. F.; Kumar, Ashok

    2016-07-01

    We discovered a near-room-temperature lead-free relaxor-ferroelectric (Ba0.6Bi0.2Li0.2)TiO3 (BBLT) having A-site compositionally disordered ABO3 perovskite structure. Microstructure-property relations revealed that the chemical inhomogeneities and development of local polar nano-regions (PNRs) are responsible for dielectric dispersion as a function of probe frequencies and temperatures. Rietveld analysis indicates mixed crystal structure with 80% tetragonal structure (space group P4mm) and 20% orthorhombic structure (space group Amm2), which is confirmed by the high resolution transmission electron diffraction (HRTEM). Dielectric constant and tangent loss dispersion with and without illumination of light obey nonlinear Vogel-Fulcher (VF) relations. The material shows slim polarization-hysteresis (P-E) loops and excellent displacement coefficients (d 33 ~ 233 pm V-1) near room temperature, which gradually diminish near the maximum dielectric dispersion temperature (T m ). The underlying physics for light-sensitive dielectric dispersion was probed by x-ray photon spectroscopy (XPS), which strongly suggests that mixed valence of bismuth ions, especially Bi5+ ions, comprise most of the optically active centers. Ultraviolet photoemission measurements showed most of the Ti ions are in 4 +  states and sit at the centers of the TiO6 octahedra; along with asymmetric hybridization between O 2p and Bi 6s orbitals, this appears to be the main driving force for net polarization. This BBLT material may open a new path for environmental friendly lead-free relaxor-ferroelectric research.

  7. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures

    NASA Astrophysics Data System (ADS)

    Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P.; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-01-01

    Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

  8. Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

    PubMed

    Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

    2017-01-06

    Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

  9. Effect of field driven phase transformations on the loss tangent of relaxor ferroelectric single crystals

    NASA Astrophysics Data System (ADS)

    Gallagher, John A.; Liu, Tieqi; Lynch, Christopher S.

    2013-02-01

    The effect of a bias stress induced phase transformation on the large field dielectric loss in [001] cut and poled single crystal stack actuators of (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT, x = 32) was experimentally characterized. Dielectric loss was observed to increase with compressive preload and electric field amplitude. The dielectric loss was determined by measuring the area within electric displacement vs. electric field hysteresis loops and the measured area was expressed in terms of an effective loss tangent. This approach matches the measured area within the hysteresis loop to an equivalent area ellipse in which the electric displacement lags the electric field by an amount, delta, under sinusoidal loading. The results collapse the measured loss as a function of bias stress and electric field amplitude reasonably close to a single curve. The measured dielectric loss behavior was attributed to the compressive stress preload driving a partial phase transformation from rhombohedral to orthorhombic and the electric field driving the reverse phase transformation from the stress induced orthorhombic phase to the zero stress rhombohedral phase. When the compressive bias stress partially or fully drives this phase transformation, the dielectric loss under unipolar electric field loading increases. This work is focused on quasi-static measurements. The large field dielectric loss is anticipated to be a function of frequency and temperature.

  10. Structural properties of 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 relaxor ferroelectric thin films on SrRuO3 conducting oxides.

    PubMed

    Lee, Ji Hye; Choi, Mi Ri; Jo, William; Jang, Ji Young; Kim, Mi Young

    2008-09-01

    Coating of 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-PT) relaxor ferroelectrics by a sol-gel method is followed by growth of epitaxial SrRuO(3) (SRO) metallic oxide electrodes on SrTiO(3) (STO) single-crystal substrate by pulsed laser deposition. High-quality PMN-PT films on SRO with preferred growth orientation were successfully fabricated by controlling the operation parameters. Structural properties of relaxor ferroelectric PMN-PT thin films on SRO/STO substrates have been studied by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). In-plane and out-of-plane alignments of the heterostructure are confirmed and the structural twinning of the materials are also revealed.

  11. 1. Innovative Relaxor-Based PiezoCrystals: Phase Diagrams, Crystal Growth, Domain Structures and Electric Properties. 2. Piezo- and Ferroelectric Materials Based on Morphotropic Phase Boundary Synthesis, Characterization and Structure - Property Relations

    DTIC Science & Technology

    2006-03-31

    Aug. 2-8, 2003. [48] Z.-G. Ye, A. Bokov and M . Maglione , "Dielectric and Structural Properties of Relaxor Ferroelectrics", 55 Years of Ferroelectrics...Pacific Center for Advanced Materials and Microstructure (PCAMM), NRC / UBC, Dec. 4, 2004. [64] A. A. Bokov, M . Maglione and Z.-G. Ye, "Low-Frequency...Argentina, Sept. 5 - 9, 2005. [78] A. A. Bokov, M . Maglione and Z.-G. Ye, "Critical Dielectric Behaviour in Ba(Til-,Zr,)0 3 Solid Solution" (0), 1 1 1h

  12. Visualization of polar nanoregions in lead-free relaxors via piezoresponse force microscopy in torsional dual AC resonance tracking mode

    NASA Astrophysics Data System (ADS)

    Liu, Na; Dittmer, Robert; Stark, Robert W.; Dietz, Christian

    2015-07-01

    Polar nanoregions (PNRs) play a key role in the functionality of relaxor ferroelectrics; however, visualizing them in lead-free relaxor ferroelectrics with high lateral resolution is still challenging. Thus, we studied herein the local ferroelectric domain distribution of the lead-free bismuth-based (1 - x)(Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3) - x(Bi1/2Mg1/2TiO3) piezoceramics which show a relaxor behavior using dual AC resonance tracking (DART) piezoresponse force microscopy (PFM). By using excitation frequencies at either side of the contact resonance peak of the torsional cantilever vibration, an enhanced contrast in the amplitude and phase images of the piezoresponse can be achieved. Additionally, this tracking technique reduces the topographical crosstalk while mapping the local electromechanical properties. The true drive amplitude, drive phase, contact resonant frequency and quality factor can be estimated from DART-PFM data obtained with vertically or torsionally vibrating cantilevers. This procedure yields a three-dimensional quantitative map of the local piezoelectric properties of the relaxor ferroelectric samples. With this approach, torsional DART allowed for the visualization of fine substructures within the monodomains, suggesting the existence of PNRs in relaxor ferroelectrics. The domain structures of the PNRs were visualized with high precision, and the local electromechanical characteristics of the lead-free relaxor ferroelectrics were quantitatively mapped.Polar nanoregions (PNRs) play a key role in the functionality of relaxor ferroelectrics; however, visualizing them in lead-free relaxor ferroelectrics with high lateral resolution is still challenging. Thus, we studied herein the local ferroelectric domain distribution of the lead-free bismuth-based (1 - x)(Bi1/2Na1/2TiO3-Bi1/2K1/2TiO3) - x(Bi1/2Mg1/2TiO3) piezoceramics which show a relaxor behavior using dual AC resonance tracking (DART) piezoresponse force microscopy (PFM). By using excitation

  13. Re-entrant relaxor behavior of Ba{sub 5}RTi{sub 3}Nb{sub 7}O{sub 30} (R = La, Nd, Sm) tungsten bronze ceramics

    SciTech Connect

    Li, Kun; Li Zhu, Xiao; Qiang Liu, Xiao; Ming Chen, Xiang

    2013-03-18

    Ba{sub 5}RTi{sub 3}Nb{sub 7}O{sub 30} (R = La, Nd, Sm) tungsten bronze ceramics were prepared, and the dielectric and ferroelectric properties were investigated over a broad temperature range. The relaxor nature was determined for all compositions in their permittivity curves, and a second anomaly of the dielectric loss (tan {delta}) was observed around 250 K in Ba{sub 5}NdTi{sub 3}Nb{sub 7}O{sub 30} and around 275 K in Ba{sub 5}SmTi{sub 3}Nb{sub 7}O{sub 30}. Both the maximum and remanent polarization tended to decrease and vanish at low temperatures in the ferroelectric phase for all compositions, which was referred to as the low temperature re-entrant relaxor behavior. The remanent polarization increased with decreasing temperature first and then reached the maximum value at the re-entrant temperature (T{sub r}). For Ba{sub 5}RTi{sub 3}Nb{sub 7}O{sub 30} (R = La, Nd, Sm), T{sub r} decreased with the radius of R{sup 3+} cations and the applied field amplitude.

  14. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    PubMed

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

  15. Electrocaloric effect and freezing temperature in (Pb0.8Ba0.2)[(Zn1/3Nb2/3)0.7Ti0.3]O3 relaxor ferroelectric ceramic

    NASA Astrophysics Data System (ADS)

    Peláiz-Barranco, A.; Calderón-Piñar, F.; Mendez-González, Y.

    2016-08-01

    The electrocaloric effect (ECE) is studied in (Pb0.8Ba0.2)[(Zn1/3Nb2/3)0.7Ti0.3]O3 relaxor ferroelectric ceramic by using an “indirect method”. The electric dependence for the polarization (hysteresis loops) has been obtained for several temperatures showing typical relaxor characteristics. The temperature change ΔT, which is associated with the ECE, is calculated by using the temperature dependence for the polarization. A maximum value for ΔT is observed for temperatures close above the freezing temperature, showing an indirect evidence of that critical temperature. The results are discussed considering the contribution of the polar nanoregions to the polarization.

  16. Octahedral tilt transitions in the relaxor ferroelectric Na{sub 1/2}Bi{sub 1/2}TiO{sub 3}

    SciTech Connect

    Meyer, Kai-Christian Gröting, Melanie; Albe, Karsten

    2015-07-15

    The kinetics of octahedral tilt transitions in the lead-free relaxor material sodium bismuth titanate Na{sub 1/2}Bi{sub 1/2}TiO{sub 3} (NBT) is investigated by electronic structure calculations within density functional theory. Energy barriers for transitions between tetragonal, rhombohedral and orthorhombic tilts in cation configurations with [001]- and [111]-order on the A-sites are determined by nudged elastic band calculations. By tilting entire layers of octahedra simultaneously we find that the activation energy is lower for structures with 001-order compared to such with 111-order. The energetic coupling between differently tilted layers is, however, negligibly small. By introducing a single octahedral defect we create local tilt disorder and find that the deformation energy of the neighboring octahedra is less in a rhombohedral than in a tetragonal structure. By successively increasing the size of clusters of orthorhombic defects in a rhombohedral matrix with 001-order, we determine a critical cluster size of about 40 Å . Thus groups of about ten octahedra can be considered as nuclei for polar nanoregions, which are the cause of the experimentally observed relaxor behavior of NBT. - Graphical abstract: Nine orthorhombic oxygen octahedral tilt defects in a rhombohedral tilt configuration. - Highlights: • Chemical order influences energy barriers of octahedral tilt transitions. • The octahedral deformation energy is lower in rhombohedral phases. • Tilt defect clusters are more likely in rhombohedral structures. • Tilt defect clusters can act as nuclei for polar nanoregions.

  17. Dielectric relaxation and polar phonon softening in relaxor ferroelectric PbMg1/3Ta2/3O3

    NASA Astrophysics Data System (ADS)

    Kamba, S.; Nuzhnyy, D.; Veljko, S.; Bovtun, V.; Petzelt, J.; Wang, Y. L.; Setter, N.; Levoska, J.; Tyunina, M.; Macutkevic, J.; Banys, J.

    2007-10-01

    Relaxor ferroelectric PbMg1/3Ta2/3O3 ceramics and thin films were investigated by means of broad-band dielectric, time-domain terahertz (THz), and Fourier-transform infrared (IR) spectroscopy in the frequency range 100 Hz-90 THz at temperatures 100-490 K; the THz and IR spectra were studied from 20 to 900 K. A diffused and strongly temperature dependent peak in the complex permittivity is caused by a dielectric relaxation due to the dynamics of polar clusters. The relaxation appears below the Burns temperature Td in the THz range; it slows down on cooling through the microwave and MHz range and anomalously broadens. The shortest and longest relaxation times of the distribution of relaxation times follow Arrhenius and Vogel-Fulcher laws, respectively. The degree of the B-site order has only a small influence on the parameters of the dielectric relaxation and almost no influence on the phonon parameters. Below Tm≅180 K the distribution of relaxation frequencies becomes broader than our experimental spectral range, and frequency independent dielectric losses develop below 100 GHz in the spectra. Although the macroscopic crystal structure is cubic, IR spectra give evidence about the lower local symmetry, which can be assigned to the presence of the polar clusters below Td. Infrared spectra above Td still reveal more modes than predicted by selection rules in the paraelectric phase of the Fm3¯m space group so that we suggest selection rules which take into account chemical inhomogeneity in the β″-perovskite sublattice.

  18. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness.

    PubMed

    Brown, Emery; Ma, Chunrui; Acharya, Jagaran; Ma, Beihai; Wu, Judy; Li, Jun

    2014-12-24

    The energy storage properties of Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films grown via pulsed laser deposition were evaluated at variable film thickness of 125, 250, 500, and 1000 nm. These films show high dielectric permittivity up to ∼1200. Cyclic I-V measurements were used to evaluate the dielectric properties of these thin films, which not only provide the total electric displacement, but also separate contributions from each of the relevant components including electric conductivity (D1), dielectric capacitance (D2), and relaxor-ferroelectric domain switching polarization (P). The results show that, as the film thickness increases, the material transits from a linear dielectric to nonlinear relaxor-ferroelectric. While the energy storage per volume increases with the film thickness, the energy storage efficiency drops from ∼80% to ∼30%. The PLZT films can be optimized for different energy storage applications by tuning the film thickness to optimize between the linear and nonlinear dielectric properties and energy storage efficiency.

  19. Study of the Electrocaloric Effect in the Relaxor Ferroelectric Ceramic 0.75PMN-0.25PT

    NASA Astrophysics Data System (ADS)

    Kriaa, I.; Abdelmoula, N.; Maalej, A.; Khemakhem, H.

    2015-12-01

    Electrocaloric (EC) cooling based on the ability of materials to change temperature by applying an electric field under adiabatic conditions is a relatively new and challenging direction in ferroelectrics research. Analytical and simulation data for the electrocaloric effect (ECE) in 0.75Pb(Mg1/3Nb2/3)O3-0.25PbTiO3 (0.75PMN-0.25PT) bulk ceramic samples are reported. The adiabatic temperature change (Δ T) due to a change of the external electric field has been calculated indirectly from the entropy change. The temperature change increases with an increase in the applied electric field and reaches a maximum of 2.1 K in 25 kV/cm electric field shift near the Curie temperature of 398 K; that is, the cooling Δ T per unit field (MV/m) is 0.896 × 10-6 m K/V. This value is significantly large for bulk ceramics and makes the compound promising for room-temperature electric cooling applications.

  20. Resonance damping of the terahertz-frequency transverse acoustic phonon in the relaxor ferroelectric KT a1 -xN bxO3

    NASA Astrophysics Data System (ADS)

    Toulouse, J.; Iolin, E.; Hennion, B.; Petitgrand, D.; Erwin, R.

    2016-12-01

    The damping (Γ a ) of the transverse acoustic (TA) phonon in single crystals of the relaxor KT a1 -xN bxO3 with x =0.15 -0.17 was studied by means of high resolution inelastic cold neutron scattering near the (200) Brillouin Zone (BZ) point where diffuse scattering is absent, although it is present near (110). In a wide range of temperatures centered on the phase transition, T =195 K ÷108 K , the TA phonon width (damping) exhibits a step increase around momentum q =0.07 , goes through a shallow maximum at q =0.09 -0.12 , and remains high above and up to the highest momentum studied of q =0.16 . These experimental results are explained in terms of a resonant interaction between the TA phonon and the collective or correlated reorientation through tunneling of the off-center N b+5 ions. The observed TA damping is successfully reproduced in a simple model that includes an interaction between the TA phonon and a dispersionless localized mode (LM) with frequency ωL and damping ΓL(ΓL<ωL) , itself coupled to the transverse optic (TO) mode. Maximum damping of the TA phonon occurs when its frequency is ωa≈ωL . The values of ωL and ΓL are moderately dependent on temperature, but the oscillator strength, M2, of the resonant damping exhibits a strong maximum in the range T ˜120 K ÷150 K in which neutron diffuse scattering near the (110) BZ point is also maximum and the dielectric susceptibility exhibits the relaxor behavior. The maximum value of M appears to be due to the increasing number of polar nanodomains. In support of the proposed model, the observed value of ωL≈0.7 THz is found to be similar to the estimate previously obtained by Girshberg and Yacoby [J. Phys.: Condens. Matter 24, 015901 (2012)], 10.1088/0953-8984/24/1/015901. Alternatively, the TA phonon damping can be successfully fitted in the framework of an empirical Havriliak-Negami (HN) relaxation model that includes a strong resonancelike transient contribution.

  1. Aging in the relaxor and ferroelectric state of Fe-doped (1-x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ piezoelectric ceramics

    SciTech Connect

    Sapper, Eva; Dittmer, Robert; Rödel, Jürgen; Damjanovic, Dragan; Erdem, Emre; Keeble, David J.; Jo, Wook; Granzow, Torsten

    2014-09-14

    Aging of piezoelectric properties was investigated in lead-free (1–x)(Bi{sub 1/2}Na{sub 1/2})TiO₃-xBaTiO₃ doped with 1at.% Fe. The relaxor character of the un-poled material prevents macroscopic aging effects, while in the field-induced ferroelectric phase aging phenomena are similar to those found in lead zirconate titanate or barium titanate. Most prominent aging effects are the development of an internal bias field and the decrease of switchable polarization. These effects are temperature activated, and can be explained in the framework of defect complex reorientation. This picture is further supported by electron paramagnetic resonance spectra indicating the existence of (Fe{sub Ti}´-V{sub O}{sup ••}){sup •} defect complexes in the Fe-doped material.

  2. Domain structures and dielectric properties resulting from tweed precursors of relaxor ferroelectric solid-solution single-crystal 24Pb(In1/2Nb1/2)O3-46Pb (Mg1/3Nb2/3)O3-30PbTio3.

    PubMed

    Yasuda, Naohiko; Nur Hidayah, Z A; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi

    2012-09-01

    The domain structures of poled and depoled lead-based relaxor ferroelectric solid-solution single-crystal 24Pb(In(1/2)Nb(1/2))O(3)-46Pb (Mg(1/3)Nb(2/3))O(3)-30PbTio(3) are studied by polarized light microscopy, piezoresponse force microscopy (PFM), scanning electron microscopy (SEM), and dielectric spectroscopy. The domain structures in the nonergodic relaxor state are found by PFM to consist of tweed structures resulting from random fields from the competition between ferroelectric and antiferroelectric distortion, and planar defects found by SEM are treated as dislocations associated with strain accommodation, resulting in superior piezoelectric properties. This domain structure is found to be connected with hierarchical domain structures.

  3. Revealing the core-shell interactions of a giant strain relaxor ferroelectric 0.75Bi1/2Na1/2TiO3-0.25SrTiO3

    PubMed Central

    Liu, Na; Acosta, Matias; Wang, Shuai; Xu, Bai-Xiang; Stark, Robert W.; Dietz, Christian

    2016-01-01

    Lead-free relaxor ferroelectrics that feature a core-shell microstructure provide an excellent electromechanical response. They even have the potential to replace the environmentally hazardous lead-zirconia-titanate (PZT) in large strain actuation applications. Although the dielectric properties of core-shell ceramics have been extensively investigated, their piezoelectric properties are not yet well understood. To unravel the interfacial core-shell interaction, we studied the relaxation behaviour of field-induced ferroelectric domains in 0.75Bi1/2Na1/2TiO3-0.25SrTiO3 (BNT-25ST), as a typical core-shell bulk material, using a piezoresponse force microscope. We found that after poling, lateral domains emerged at the core-shell interface and propagated to the shell region. Phase field simulations showed that the increased electrical potential beneath the core is responsible for the in-plane domain evolution. Our results imply that the field-induced domains act as pivotal points at the coherent heterophase core-shell interface, reinforcing the phase transition in the non-polar shell and thus promoting the giant strain. PMID:27841299

  4. Revealing the core-shell interactions of a giant strain relaxor ferroelectric 0.75Bi1/2Na1/2TiO3-0.25SrTiO3

    NASA Astrophysics Data System (ADS)

    Liu, Na; Acosta, Matias; Wang, Shuai; Xu, Bai-Xiang; Stark, Robert W.; Dietz, Christian

    2016-11-01

    Lead-free relaxor ferroelectrics that feature a core-shell microstructure provide an excellent electromechanical response. They even have the potential to replace the environmentally hazardous lead-zirconia-titanate (PZT) in large strain actuation applications. Although the dielectric properties of core-shell ceramics have been extensively investigated, their piezoelectric properties are not yet well understood. To unravel the interfacial core-shell interaction, we studied the relaxation behaviour of field-induced ferroelectric domains in 0.75Bi1/2Na1/2TiO3-0.25SrTiO3 (BNT-25ST), as a typical core-shell bulk material, using a piezoresponse force microscope. We found that after poling, lateral domains emerged at the core-shell interface and propagated to the shell region. Phase field simulations showed that the increased electrical potential beneath the core is responsible for the in-plane domain evolution. Our results imply that the field-induced domains act as pivotal points at the coherent heterophase core-shell interface, reinforcing the phase transition in the non-polar shell and thus promoting the giant strain.

  5. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics

    PubMed Central

    Bintachitt, P.; Jesse, S.; Damjanovic, D.; Han, Y.; Reaney, I. M.; Trolier-McKinstry, S.; Kalinin, S. V.

    2010-01-01

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025–1 μm3 volumes, approximately 106 times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms. PMID:20368462

  6. Collective dynamics underpins Rayleigh behavior in disordered polycrystalline ferroelectrics.

    PubMed

    Bintachitt, P; Jesse, S; Damjanovic, D; Han, Y; Reaney, I M; Trolier-McKinstry, S; Kalinin, S V

    2010-04-20

    Nanoscale and mesoscopic disorder and associated local hysteretic responses underpin the unique properties of spin and cluster glasses, phase-separated oxides, polycrystalline ferroelectrics, and ferromagnets alike. Despite the rich history of the field, the relationship between the statistical descriptors of hysteresis behavior such as Preisach density, and micro and nanostructure has remained elusive. By using polycrystalline ferroelectric capacitors as a model system, we now report quantitative nonlinearity measurements in 0.025-1 microm(3) volumes, approximately 10(6) times smaller than previously possible. We discover that the onset of nonlinear behavior with thickness proceeds through formation and increase of areal density of micron-scale regions with large nonlinear response embedded in a more weakly nonlinear matrix. This observation indicates that large-scale collective domain wall dynamics, as opposed to motion of noninteracting walls, underpins Rayleigh behavior in disordered ferroelectrics. The measurements provide evidence for the existence and extent of the domain avalanches in ferroelectric materials, forcing us to rethink 100-year old paradigms.

  7. Modification of Relaxor and Impedance Spectroscopy Properties of Lead Magnesium Niobate by Bismuth Ferrite

    NASA Astrophysics Data System (ADS)

    Das, S. N.; Pradhan, S.; Bhuyan, S.; Choudhary, R. N. P.; Das, P.

    2017-03-01

    The relaxor and impedance characteristics of classic or traditional lead magnesium niobate (PbMg1/3Nb2/3O3; PMN) ferroelectric relaxor material have been modified by chemically synthesizing with multiferroic bismuth ferrite (BiFeO3; BFO). Detailed studies of structural, morphological and electrical properties of PMN-BFO-prepared solid solutions [((Pb1- x Bi x ) (Mg0.33(1- x)Nb0.66(1- x)Fe x ) O3) with x = 0.1, 0.2, 0.3 and 0.4] reveal some interesting findings on structure-properties relationships. The formation of single phase material of each compound in orthorhombic crystal system is identified from x-ray diffraction. The microstructure analyses reveal that the grain size of PMN-BFO increases for increasing BFO weight percent with PMN. The increase of BFO concentration not only improves the dielectric response of PMN-BFO but also modifies the nature of attained phase transition from a typical relaxor to a normal ferroelectric. The impedance spectroscopy studies exhibit the presence of grain and grain boundary effects, and the existence of a positive temperature coefficient of resistance (PTCR) in the material. The ac conductivity increases with the increase in frequency in the low-temperature region for larger content of BFO in the solid solutions. It is observed that the prepared electronic materials obey the non-Debye-type of conductivity relaxation behavior.

  8. Composition dependence of the diffuse scattering in the relaxor ferroelectric compound (1-x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (0{<=}x{<=}0.40)

    SciTech Connect

    Matsuura, M.; Hirota, K.; Gehring, P. M.; Ye, Z.-G.; Chen, W.; Shirane, G.

    2006-10-01

    We have used neutron diffraction to characterize the diffuse scattering in five single crystals of the relaxor ferroelectric (1-x)Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-xPbTiO{sub 3} (PMN-xPT) with x=0, 10, 20, 30, and 40%. The addition of ferroelectric PbTiO{sub 3} modifies the well-known 'butterfly' and 'ellipsoidal' diffuse scattering patterns observed in pure PMN (x=0), which are believed to be associated with the presence of randomly oriented polar nanoregions. In particular, the anisotropy of the diffuse scattering diminishes as the PT content increases. The spatial correlation length {xi} along the [110] direction derived from the width of the diffuse scattering at room temperature increases from 12.6 A for PMN to 350 A for PMN-20%PT. In addition, the diffuse scattering intensity at q=0 grows and reaches a maximum value around the morphotropic phase boundary (MPB), which suggests that it is proportional to the dielectric susceptibility. Beyond x=30%, a concentration very close to the MPB, no diffuse scattering is observed below T{sub C}, and well-defined critical behavior appears near T{sub C}. By contrast, the diffuse scattering for x{<=}20% persists down to low temperatures, where the system retains an average cubic structure (T{sub C}=0). Finally, the anisotropic soft transverse optic (TO) modes observed in PMN are found to be isotropic for PMN-30%PT, which strongly suggests a connection between the anisotropic diffuse scattering and the TO modes.

  9. Continuous cross-over from ferroelectric to relaxor state and piezoelectric properties of BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} single crystals

    SciTech Connect

    Benabdallah, F.; Veber, P. Prakasam, M.; Viraphong, O.; Maglione, M.; Shimamura, K.

    2014-04-14

    Optimal properties like piezoelectricity can be found in polarizable materials for which the structure changes sharply under small composition variations in the vicinity of their morphotropic phase boundary or the triple point in their isobaric temperature-composition phase diagram. In the latter, lead-free (Ba{sub 0.850}Ca{sub 0.150})(Ti{sub 0.900}Zr{sub 0.100})O{sub 3} ceramics exhibit outstanding piezoelectric coefficients. For the first time, we report the growth of piezoelectric lead-free single crystals in the BaTiO{sub 3}-BaZrO{sub 3}-CaTiO{sub 3} pseudo-ternary system. The stoichiometry control in the CaO-BaO-TiO{sub 2}-ZrO{sub 2} solid solution led to single crystals with various compositions ranging from (Ba{sub 0.857}Ca{sub 0.143})(Ti{sub 0.928}Zr{sub 0.072})O{sub 3} to (Ba{sub 0.953}Ca{sub 0.047})(Ti{sub 0.427}Zr{sub 0.573})O{sub 3}. We evidenced a continuous cross-over from a ferroelectric state at high titanium content to a relaxor one on increasing the zirconium content. Such a property tuning is rather seldom observed in lead-free ferroelectrics and confirms what was already reported for ceramics. Single crystal with (Ba{sub 0.838}Ca{sub 0.162})(Ti{sub 0.854}Zr{sub 0.146})O{sub 3} composition, which has been grown and oriented along [001] crystallographic direction, displayed electromechanical coefficients d{sub 31} and k{sub 31} of 93 pC.N{sup −1} and 0.18, respectively, near the room temperature (T = 305 K)

  10. Continuous cross-over from ferroelectric to relaxor state and piezoelectric properties of BaTiO3-BaZrO3-CaTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Benabdallah, F.; Veber, P.; Prakasam, M.; Viraphong, O.; Shimamura, K.; Maglione, M.

    2014-04-01

    Optimal properties like piezoelectricity can be found in polarizable materials for which the structure changes sharply under small composition variations in the vicinity of their morphotropic phase boundary or the triple point in their isobaric temperature-composition phase diagram. In the latter, lead-free (Ba0.850Ca0.150)(Ti0.900Zr0.100)O3 ceramics exhibit outstanding piezoelectric coefficients. For the first time, we report the growth of piezoelectric lead-free single crystals in the BaTiO3-BaZrO3-CaTiO3 pseudo-ternary system. The stoichiometry control in the CaO-BaO-TiO2-ZrO2 solid solution led to single crystals with various compositions ranging from (Ba0.857Ca0.143)(Ti0.928Zr0.072)O3 to (Ba0.953Ca0.047)(Ti0.427Zr0.573)O3. We evidenced a continuous cross-over from a ferroelectric state at high titanium content to a relaxor one on increasing the zirconium content. Such a property tuning is rather seldom observed in lead-free ferroelectrics and confirms what was already reported for ceramics. Single crystal with (Ba0.838Ca0.162)(Ti0.854Zr0.146)O3 composition, which has been grown and oriented along [001] crystallographic direction, displayed electromechanical coefficients d31 and k31 of 93 pC.N-1 and 0.18, respectively, near the room temperature (T = 305 K).

  11. Losses in Ferroelectric Materials.

    PubMed

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-03-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  12. Losses in Ferroelectric Materials

    PubMed Central

    Liu, Gang; Zhang, Shujun; Jiang, Wenhua; Cao, Wenwu

    2015-01-01

    Ferroelectric materials are the best dielectric and piezoelectric materials known today. Since the discovery of barium titanate in the 1940s, lead zirconate titanate ceramics in the 1950s and relaxor-PT single crystals (such as lead magnesium niobate-lead titanate and lead zinc niobate-lead titanate) in the 1980s and 1990s, perovskite ferroelectric materials have been the dominating piezoelectric materials for electromechanical devices, and are widely used in sensors, actuators and ultrasonic transducers. Energy losses (or energy dissipation) in ferroelectrics are one of the most critical issues for high power devices, such as therapeutic ultrasonic transducers, large displacement actuators, SONAR projectors, and high frequency medical imaging transducers. The losses of ferroelectric materials have three distinct types, i.e., elastic, piezoelectric and dielectric losses. People have been investigating the mechanisms of these losses and are trying hard to control and minimize them so as to reduce performance degradation in electromechanical devices. There are impressive progresses made in the past several decades on this topic, but some confusions still exist. Therefore, a systematic review to define related concepts and clear up confusions is urgently in need. With this objective in mind, we provide here a comprehensive review on the energy losses in ferroelectrics, including related mechanisms, characterization techniques and collections of published data on many ferroelectric materials to provide a useful resource for interested scientists and engineers to design electromechanical devices and to gain a global perspective on the complex physical phenomena involved. More importantly, based on the analysis of available information, we proposed a general theoretical model to describe the inherent relationships among elastic, dielectric, piezoelectric and mechanical losses. For multi-domain ferroelectric single crystals and ceramics, intrinsic and extrinsic energy

  13. Flexible relaxor materials: Ba(2)Pr(x)Nd(1-x)FeNb(4)O(15) tetragonal tungsten bronze solid solution.

    PubMed

    Castel, Elias; Josse, Michaël; Michau, Dominique; Maglione, Mario

    2009-11-11

    Relaxors are very interesting materials but most of the time they are restricted to perovskite materials and thus their flexibility is limited. We have previously shown that tetragonal tungsten bronze (TTB) niobate Ba(2)PrFeNb(4)O(15) was a relaxor below 170 K and that Ba(2)NdFeNb(4)O(15) displays a ferroelectric behavior with a T(C) = 323 K. On scanning the whole solid solution Ba(2)Pr(x)Nd(1-x)FeNb(4)O(15) (x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1), we demonstrate here a continuous crossover between these end member behaviors with a coexistence of ferroelectricity and relaxor in the intermediate range. This tunability is ascribed to the peculiar structure of the TTB networks which is more open than the classical perovskites. This allows for the coexistence of long range and short range orders and thus opens up the range of relaxor materials.

  14. Large strain transduction utilizing phase transition in relaxor-ferroelectric Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

    NASA Astrophysics Data System (ADS)

    Finkel, Peter; Benjamin, Kim; Amin, Ahmed

    2011-05-01

    In this work, we present experimental evidence that under relatively low level drive (<0.1 MV/m) the large strain (˜0.5%) associated with ferroelectric rhombohedral FR-ferroelectric orthorhombic FO phase transition in domain engineered relaxor-ferroelectric single crystals under compressive stress and bias electric field can be captured. We have demonstrated this in mechanically confined ternary Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals poised at the rhombohedral side of the morphotropic phase boundary. Experimental strain-field results, methods of mechanical confinement and drive, and a low frequency, compact, high source level sound projector design are presented. Transducers that operate on a large strain principle as a design rule will benefit from this development.

  15. Electric field cycling behavior of ferroelectric hafnium oxide.

    PubMed

    Schenk, Tony; Schroeder, Uwe; Pešić, Milan; Popovici, Mihaela; Pershin, Yuriy V; Mikolajick, Thomas

    2014-11-26

    HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis is introduced for temperature-dependent studies of the field cycling behavior and the underlying defect mechanisms. Activation energies for wake-up and fatigue are extracted. Notably, all values are about 100 meV, which is 1 order of magnitude lower than for conventional ferroelectrics like lead zirconate titanate (PZT). This difference is mainly atttributed to the one to two orders of magnitude higher electric fields used for cycling and to the different surface to volume ratios between the 10 nm thin films in this study and the bulk samples of former measurements or simulations. Moreover, a new, analog-like split-up effect of switching peaks by field cycling is discovered and is explained by a network model based on memcapacitive behavior as a result of defect redistribution.

  16. Features of the Relaxor State in the Simple-Perovskite Mixed-Oxide System (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3

    NASA Astrophysics Data System (ADS)

    Tsukasaki, Hirofumi; Tanaka, Yohei; Chiba, Yuki; Koyama, Yasumasa

    2017-03-01

    The mixed-oxide system (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT) has a simple perovskite structure and exhibits relaxor behavior for 0 ≤ x ≤ 0.30 (low Ti contents). To understand the relaxor state in PMN-xPT, the crystallographic features of the ferroelectric states were investigated via transmission electron microscopy, taking advantage of Friedel's law failure. Polar regions having <110>C and <001>C components were observed separately both below and near Tm, the maximum temperature of the dielectric permittivity for the relaxor. As a result, the relaxor state for 0 < x ≤ 0.30 was identified as an assembly of nanometer-scale polar domains with rhombohedral symmetry. On the other hand, the ferroelectric states for 0.40 ≤ x ≤ 0.70 are characterized by a ferroelectric MC-type monoclinic state, having a polarization vector in the {100}C planes. Thus, the FR/FMC boundary around x = 0.35 was identified as the morphotropic phase boundary (MPB), nearly parallel to the temperature axis.

  17. Relaxor ferroelectric properties of the (1-2 x)BiScO3 · xPbTiO3 · xPbMg1/3Nb2/3O3 (0.30 ≤ x ≤ 0.46) system

    NASA Astrophysics Data System (ADS)

    Bush, A. A.; Kamentsev, K. E.; Bekhtin, M. A.; Segalla, A. G.

    2017-01-01

    X-ray diffraction, dielectric, piezoelectric, and pyroelectric studies have been performed on ceramic samples of (1-2 x)BiScO3 · xPbTiO3 · xPbMg1/3Nb2/3O3 (0.30 ≤ x ≤ 0.46) perovskite-like solid solutions. The solid solution symmetry was found to vary from the rhombohedral ( x ≤ 0.38) to tetragonal ( x ≥ 0.42) as x increases. The samples with 0.30 < x ≤ 0.42 have properties characteristic of relaxor ferroelectrics, namely the existence of a wide peak in the temperature dependence of the dielectric permittivity at T mɛ = 390-440 K that shifts to higher temperatures as the frequency increases, narrow unsaturated dielectric hysteresis loops, and an electric field-induced transition to the ferroelectric state at 318 K. The observed features of the dielectric, piezo-, and pyroelectric properties of these solid solutions are explained by the fact that they are relaxor ferroelectrics.

  18. Relaxor ferroeletric behavior in S r1 -xP rxTi O3 : Cooperation between polar and antiferrodistortive instabilities

    NASA Astrophysics Data System (ADS)

    Checchia, Stefano; Allieta, Mattia; Coduri, Mauro; Brunelli, Michela; Scavini, Marco

    2016-09-01

    Chemical doping at the Sr and Ti sites is a feasible way to alter the quantum paraelectric state of SrTi O3 perovskite. Doping with Pr is known to induce relaxor ferroelectricity at room temperature in the S r1 -xP rxTi O3 solid solution. The relationship between its dielectric properties and structural phase transition has been debated, but no definitive structural argument has been proposed. Here we present a systematic structural study of S r1 -xP rxTi O3 (0.020 ≤x ≤0.150 ). We establish the structural phase diagram using high-resolution x-ray powder diffraction by finding the antiferrodistortive structural phase transitions for all the compositions studied. By using pair distribution function analysis, we show the mismatch between local and long-range structures in terms of increased local order parameters. Finally, we propose a correlation between the local structural order parameters and the emergence of hard polar modes as found by Raman spectroscopy. Our results are quantitatively consistent with recent theoretical calculations showing that the increase of local tetragonality and local octahedral tilting above a critical value in fact underlie the polar instability. This confirms that structural orders involving both polar and antiferrodistortive characters compete and cooperate at different levels, promoting ferroelectricity in S r1 -xP rxTi O3 .

  19. Polymer Alignment Behavior with Molecular Switching of Ferroelectric Liquid Crystal

    NASA Astrophysics Data System (ADS)

    Murashige, Takeshi; Fujikake, Hideo; Sato, Hiroto; Kikuchi, Hiroshi; Kurita, Taiichiro; Sato, Fumio

    2007-01-01

    This paper describes the molecular alignment behavior of polymer networks with switching of a ferroelectric liquid crystal (FLC) in a molecularly aligned FLC/polymer composite film. The polymer alignment in the composite film, which was slowly formed by photopolymerization-induced phase separation of a heated nematic-phase solution of FLC and monomers, was observed by polarization Raman spectral microscopy. Raman peak intensities originating from the polymers were changed with those from the FLC, when the applied voltage polarity was changed. The trace patterns of the Raman peak intensity with in-plane rotation of the composite film indicated that the formed flexible polymers can follow FLC molecular switching.

  20. Structural state of relaxor ferroelectrics PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 at high pressures up to 30 GPa

    NASA Astrophysics Data System (ADS)

    Maier, B. J.; Waeselmann, N.; Mihailova, B.; Angel, R. J.; Ederer, C.; Paulmann, C.; Gospodinov, M.; Friedrich, A.; Bismayer, U.

    2011-11-01

    The pressure-induced structural changes in perovskite-type (ABO3) Pb-based relaxor ferroelectrics are studied on the basis of in situ single-crystal synchrotron x-ray diffraction and Raman scattering experiments on PbSc0.5Ta0.5O3 and PbSc0.5Nb0.5O3 conducted under hydrostatic conditions up to 30 GPa. Complementary density functional theory calculations have been performed to compare the stability of various atomic configurations for both compounds at high pressures. By combining the experimental and theoretical results, the following sequence of structural transformations is proposed. At a characteristic pressure p1 the mesoscopic polar order is violated and a local antipolar order of Pb atoms as well as quasidynamical long-range order of antiphase octahedral tilts is developed. These structural changes facilitate the occurrence of a continuous phase transition at pc1>p1 from cubic to a nonpolar rhombohedral structure comprising antiphase octahedral tilts of equal magnitude (a-a-a-). At a characteristic pressure p2>pc1 the octahedral tilts around the cubic [100], [010], and [001] directions become different from each other on the mesoscopic scale. The latter precedes a second phase transition at pc2, which involves long-range order of Pb antipolar displacements along cubic [uv0] directions and a compatible mixed tilt system (a+b-b-) or long-range ordered antiphase tilts with unequal magnitudes (a0b-b-) without Pb displacement ordering. The phase-transition pattern at pc2 depends on the fine-scale degree of chemical B-site order in the structure.

  1. Electrocaloric Study Effect in the Relaxor Ferroelectric Ceramic 0.9(0.75PMN-0.25PT)-0.1PS

    NASA Astrophysics Data System (ADS)

    Kriaa, Issa; Maalej, Ahmed; Khemakhem, Hamadi

    2017-04-01

    This work is meant to study the electrocaloric effect in 0.9(0.75Pb(Mg1/3 Nb2/3)O3-0.25PbTiO3)-0.1PbSnO3 (0.9(PMN-PT)-0.1PS) ferroelectric ceramics. The adiabatic temperature change (Δ T) of 0.9(PMN-PT)-0.1PS ceramic, due to the application or withdrawal of an electric field, were calculated through the thermodynamic relation. The temperature change increases with an increase in the applied electric field and reaches a maximum of 0.66 K in a 30 kV/cm electric field shift near the morphotropic phase boundary transition, ferroelectric-paraelectric, at 373 K; that is, the electrocaloric coefficient is 0.220 × 10-6 m K/V, this obtained value is at high temperature, which limits its potential as the next generation solid state cooling devices.

  2. Textured ferroelectric thin films: Synthesis, characterization, and influence of compositional grading on the dielectric behavior

    NASA Astrophysics Data System (ADS)

    El-Naggar, Mohamed Y.

    This dissertation focuses on two topics concerning the connections between structure and property in ferroelectric thin films. First, the synthesis of highly oriented ferroelectric thin films is addressed, where the texture is needed to generate high strains that rely on electromechanical domain switching. The ferroelectric films are integrated with oxide electrodes onto single crystal MgO and Si substrates using biaxially-textured MgO as buffer layers. The second topic focuses on modeling the dielectric behavior of compositionally graded ferroelectrics. The functional ferroelectric PbxBa1- xTiO3 films are deposited by metalorganic chemical vapor deposition (MOCVD). SrRuO3, grown by pulsed laser deposition (PLD), is a lattice-matching electrode. Both the ferroelectric and oxide electrode layers are found to inherit the biaxial texture of the underlying MgO template, which can be deposited by ion beam assisted deposition (IBAD) directly on Si-based substrates. In addition, we demonstrated control of the ferroelectric film stoichiometry using a spectroscopic control loop that monitors the ultraviolet spectra of the gas-phase MOCVD precursors during growth. Detailed studies of the microstructural details of these films will be presented. The second topic of this thesis explores the dielectric behavior of functionally graded ferroelectric thin films. Homogenous ferroelectrics offer the possibility of engineering a tunable dielectric response for components in microwave circuits. However, this approach often leads to an undesired temperature sensitivity. Compositionally-graded BaxSr1- xTO3 ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. A continuum model is presented to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic

  3. Theoretical prediction of electrocaloric effect based on non-linear behaviors of dielectric permittivity under temperature and electric fields

    NASA Astrophysics Data System (ADS)

    Liu, Hongbo; Yang, Xue

    2015-11-01

    The electrocaloric (EC) effect has been paid great attentions recently for applications on cooling or electricity generation. However, the directly commercial measurement equipment for the effect is still unavailable. Here we report a novel method to predict EC effect by non-linear behaviors of dielectric permittivity under temperature and electric fields. According to the method, the analytical equations of EC temperature change ΔT are directly given for normal ferroelectrics and relaxor. The calculations have been performed on several materials and it is shown that the method is suitable for both inorganic and organic ferroelectrics, and relaxor.

  4. Targeted basic studies of ferroelectric and ferroelastic materials for piezoelectric transducer applications

    NASA Astrophysics Data System (ADS)

    Cross, L. E.; Newnham, R. E.; Barsch, G. R.; Biggers, J. V.

    1983-03-01

    The work reported covers the fifth and final year of the program of targeted basic studies of ferroelectric and ferroelastic materials for piezoelectric transducer applications. Major achievements include: the development of a physical approach to understanding active composites, leading to the development of several new families of PZT, polymer piezoelectric composites for hydrophone application. These are new advances in the phenomenology and microscopic theory of electrostriction, and the evolution of a new family of high strain ferroelectric relaxor materials for practical application. New basic understanding of the polarization mechanisms in ferroelectric relaxors has been aided by the study of order disorder of the cation arrangement in lead scandium tantalate, and the results correlate well with studies of relaxor behavior, and of shape memory effects in PLZT ceramics. Low temperature studies on pure and doped PZTs have given the first clear indication of the intrinsic (averaged) single domain in response and correlate exceedingly well with earlier phenomenological theory. Crystal growth and ceramic processing studies have developed hand in hand with program needs providing new forms of conventional materials, new grain oriented structures and single crystals.

  5. High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering

    SciTech Connect

    Wang, Xiaolin; Zhang, Le; Hao, Xihong An, Shengli

    2015-05-15

    Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated that the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.

  6. Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3 single crystal.

    PubMed

    Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

    2016-03-01

    A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm(3). This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.

  7. Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-Pb(In1/2Nb1/2)O3-PbTiO3 single crystal

    NASA Astrophysics Data System (ADS)

    Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

    2016-03-01

    A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-Pb(In1/2Nb1/2)O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm3. This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.

  8. Dielectric properties and aging effects of manganese modified lead iron tungstate relaxor ceramics

    SciTech Connect

    Zhou, L.; Vilarinho, P.M.; Baptista, J.L.

    1996-06-01

    Mn-doped samples were used to study the effects of Mn dopant on the dielectric properties of PFW ceramics, especially on its aging behavior, since they could add some knowledge on the role of lattice defects on the aging mechanisms of this relaxor ferroelectric. Mn doping does not cause marked changes in the maximum of permittivity ({var_epsilon}{sub rmax}), transition temperature (T{sub 0}), and diffuseness coefficient ({delta}) under the solubility limit, whereas the resistivity increases significantly with increasing the Mn content. Mn-modified PFW ceramics exhibit evident aging behavior and its level increases with the increase in Mn content. The aging shows strong dependence on the frequency and has a log-linear function of aging time. Probable lattice defects in the ceramics are discussed and it is suggested that the acceptor Mn ions are dominantly compensated by oxygen vacancies, providing reorientable dipole pairs which are responsible for the aging process of Mn-modified PFW ceramics.

  9. Nanostructure and Defect Chemistry of Relaxor Ferroelectrics

    DTIC Science & Technology

    1988-07-31

    quenched from 1400, 1500 and 1600"C to room temperature, a few were fast fired at 1600"C and some were annealed at 1400T. Nonstoichiometric BZNZ and BZNN...and (2 2 4) in the [111] zone axis were too weak to resolve the ordered domains by the CDF technique. 4 The simplest and most straight forword 1:2...single(fig.2a) mizure of short range ordering and furnace cooled of 1:1 and 1;2 type(fig. 2b,c) fast fired at 160o*C single same as above quenched from

  10. Study of the structure, dielectric and ferroelectric behavior of BaBi4+δTi4O15 ceramics

    NASA Astrophysics Data System (ADS)

    Khokhar, Anita; Goyal, Parveen K.; Thakur, O. P.; Sreenivas, K.

    2016-05-01

    The structure and ferroelectric properties of excess bismuth doped barium bismuth titanate BaBi4+δTi4O15 (δ = 2 - 10 wt.%)) ceramics prepared by solid-state reaction method have been investigated. X-ray diffraction (XRD) confirms the formation of a single phase material with a change in the orthorhombic distortion with varying excess of bismuth content. There is no change in the phase transition temperature (Tm) while the relaxor behaviour has been modified significantly with excess of bismuth doping. Saturated hysteresis loops with high remnant polarization (Pr ~ 12.5 µC/cm2), low coercive fields (Ec ~ 26 kV/cm) are measured and a high piezoelectric coefficient (d33 ~ 29 pC/N) is achieved in poled BaBi4Ti4O15 ceramics prepared with up to 8 wt.% of excess bismuth oxide. The improvement in the ferroelectric properties with increase in the excess bismuth content in BaBi4Ti4O15 ceramics has been explained in terms of changing oxygen vacancy concentration and structural relaxation. Tunable ferroelectric materials can be obtained by manipulating the doping amount of excess bismuth.

  11. Piezo-/dielectric properties of perovskite-structure high-temperature relaxor ferroelectrics: The Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ternary ceramics

    SciTech Connect

    Li, Tao; Long, Xifa

    2014-03-01

    Graphical abstract: - Highlights: • Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}-based ternary ferroelectric ceramics were prepared by solid-state synthesis method. • Morphotropic phase boundary region has been determined by XRD, di-/piezoelectric properties. • The compositions near MPB region exhibit excellent piezoelectric properties. - Abstract: A new compositional system of relaxor ferroelectrics was investigated based on the high piezoelectricity Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} ferroelectric perovskite family. Compositions were fabricated near an estimated morphotropic phase boundary (MPB) of the Pb(Lu{sub 1/2}Nb{sub 1/2})O{sub 3}–Pb(Zn{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} (PLZNT) ternary system by a two-step synthetic process. Their structures have been analyzed by means of X-ray diffraction technique. On the basis of X-ray powder diffraction, the morphotropic phase boundary (MPB) region for the ternary system was obtained. The Curie temperature T{sub C} of ternary system varied from 240 °C to 330 °C and the coercive fields E{sub c}s > 10 kV/cm. The values of piezoelectric coefficients d{sub 33} vary in the range of 260–450 pC/N with different PZN contents. It is worth noting that the optimum compositions were located at MPB region but near the tetragonal phase. The new PLZNT ceramics exhibit wider range of T{sub C}s and E{sub c}s, making it a promising material for high-powder ultrasound transducers using in a large temperature range.

  12. Nanoscale piezoelectric and ferroelectric behaviors of seashell by piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Li, Tao; Zeng, Kaiyang

    2013-05-01

    Seashells, the armor of one of the most ancient species, have demonstrated outstanding mechanical properties such as simultaneous strengthening and toughening. The seashells have also been proven to exhibit piezoelectric and ferroelectric properties, which may contribute to their mechanical behaviors and various functionalities. This work has elaborated in more details of the piezoelectric and ferroelectric behaviors of the nacre by using the DART (Dual-AC Resonance Tracking) and vector-PFM (Piezoresponse Force Microscope), as well as the SS-PFM (Switching Spectroscopy PFM) techniques. By using the vector-PFM technique, the local polarization directions of intracrystalline biopolymers are found to be very close to the direction perpendicular to the platelet surface, and it, therefore, shows strong piezoresponse along this direction. On the other hand, the interlamellar biopolymer shows strong piezoresponse in the direction parallel to the platelet surface. This intrinsic piezoelectric property of the biopolymer may be the basis for sensing and actuating during biomineralization process. Besides the piezoresponse, the locations of various biopolymers are also revealed in-situ by using the PFM technique. The ferroelectric behaviors of nacre have been observed by SS-PFM method. Based on the shapes of the ferroelectric hysteresis loops, it is found that the biopolymers in nacre exhibit the similar behaviors to that of the polyvinylidene fluoride (PVDF) based co- or ter-polymers for energy storage applications.

  13. Targeted basic studies of ferroelectric and ferroelastic materials for piezoelectric transducer applications

    NASA Astrophysics Data System (ADS)

    Cross, L. E.; Newnham, R. E.; Barsch, G. R.; Biggers, J. V.

    1983-03-01

    The report delineates the new progress made in the fifth and final year and discusses the major accomplishments of the full five year program both in the basic science and in the spin off to practical transducer applications. Possible new areas of study which are suggested by the present studies are briefly reported. Major achievements include the development of a physical approach to understanding active composites, leading to the development of several new families of PZT:polymer piezoelectric composites for hydrophone application. New advances in the phenomenology and microscopic theory of electrostriction, and the evolution of a new family of high strain ferroelectric relaxor materials for practical application. New basic understanding of the polarization mechanisms in ferroelectric relaxors has been aided by the study of order-disorder of the cation arrangement in lead scandium tantalate, and the results correlate well with studies of relaxor behavior, and of shape memory effects in PLZT ceramics. Low temperature studies on pure and doped PZTs have given the first clear indication of the intrinsic (averaged) single domain response and correlate exceedingly well with earlier phenomenological theory. Crystal growth and ceramic processing studies have developed hand-in-hand with program needs providing new forms of conventional materials, new grain oriented structures and single crystals.

  14. Effects of surface tension and axis stress on piezoelectric behaviors of ferroelectric nanowires

    NASA Astrophysics Data System (ADS)

    Chen, Y. Q.; En, Y. F.; Huang, Y.; Kong, X. D.; Zheng, X. J.; Lu, Y. D.

    2011-11-01

    The effects of surface tension and axis stress on piezoelectric behaviors of ferroelectric nanowires with radius polarization were investigated by the time-dependent Ginzburg-Landau theory. When surface tension increases, both of coercive field and remnant strain decrease. The larger the surface tension is, the more they decrease. The axis compressive stress enhances the coercive field and remnant strain, while the axis tensile stress has contrary effect. The reason for the stress-modulated piezoelectricity is that radius polarization is forced by axis compressive stress but restrained by surface tension and axis tensile stress. The research is useful for ferroelectric nanostructures in strain engineering.

  15. Structure-property-performance relationships of new high temperature relaxors for capacitor applications

    NASA Astrophysics Data System (ADS)

    Stringer, Craig J.

    This thesis extends the investigations on perovskite solid solutions based on PbTiO3-Bi(Me',Me")O3 (Me' = Sc3+, Zn2+, Mg2+, Ni2+, In3+ , Fe3+, etc. and Me" = Ti4+, Nb 5+, W6+) systems. The ferroelectric transition temperature (TC) behavior was considered in the tetragonal phase region of the PbTiO 3-Bi(Me',Me")O3 systems. Trends in the TC compositional dependence exhibited three main cases: case 1, a continued increase in transition temperature above the end-member PbTiO3 (495°C); case 2, an increase and then decrease of the transition temperature; and case 3, a continuous decrease in the transition temperature with Bi(Me',Me")O 3 additions. New relaxor materials were developed from the PbTiO3-Bi(Me',Me")O 3 solid solutions; specifically, the Bi(Mg3/4W1/4)O 3-PbTiO3 (BMW-PT) binary solid solution and BiScO3-Pb(Mg 1/3Nb2/3)O3-PbTiO3 (BS-PMN-PT) ternary solid solution were investigated. Permittivity, polarization and pyroelectric measurements were performed on BMW-PT and BS-PMN-PT compositions with respect to temperature with characteristic relaxor behavior observed. The complex solid solution BMW-PT exhibited a morphotropic phase boundary at ˜48 mol% PbTiO3 with a corresponding TC of 205°C. On further structural analysis with diffraction contrast transmission electron microscopy along with x-ray diffraction, evidence of B-site ordering was observed. The BS-PMN-PT proved to be a model system with high temperature relaxor properties of Tmax ˜ 250°C to 300°C and εmax ˜ 14,000 to 17,000 at 1 kHz. The deviation temperature, TD, or temperature of the onset of local spontaneous polarization, was determined by thermal strain measurement and high temperature dielectric measurement to be approximately 600°C; up to 250°C higher than any reported value for relaxor ferroelectrics. The frequency dependence of the temperature of the permittivity maximum was found to follow the Vogel-Fulcher relationship, with an activation energy (EA) of ˜0.1 eV, and a freezing

  16. Ferroelectric behavior of the odd-numbered nylons

    SciTech Connect

    Scheinbeim, J.I.; Newman, B.A.

    1993-12-31

    Recent work in the Polymer Electroprocessing Laboratory. Rutgers University, has shown that the odd-numbered nylons (11, 9, 7, 5) constitute the second known family of ferroelectric polymers: poly(vinylidene fluoride) and its co-polymers are the only other known family of ferroelectric polymers. Using mel-quenched and cold-drawn samples of nylon 11 which exhibit double orientation (chain axes in the draw direction and hydrogen bonds in the plane of the films) the authors examined changes in orientation of the polar (hydrogen bonds) and non-polar (hydrocarbon) sections as a function of annealing temperature and applied electric field. Using FTIR and WAXD studies, the authors have found that the samples polarized by application of electric fields before high temperature annealing exhibit diffraction patterns rotated by 90{degrees} from those of samples exposed to only high temperature annealing. These studies also show that the polarized, annealed samples are triply oriented and that they hydrocarbon sections exhibit little crystal order unless samples are annealed at high temperature.

  17. Relationship between ferroelectric properties and local structure of Pb1-xBaxZr0.40Ti0.60O3 ceramic materials studied by X-ray absorption and Raman spectroscopies

    NASA Astrophysics Data System (ADS)

    Mesquita, Alexandre; Michalowicz, Alain; Moscovici, Jacques; Pizani, Paulo Sergio; Mastelaro, Valmor Roberto

    2016-08-01

    This paper reports on the structural characterization of Pb1-xBaxZr0.40Ti0.60O3 (PBZT) ferroelectric ceramic compositions prepared by the conventional solid state reaction method. X-ray absorption spectroscopy (XAS) and Raman spectroscopy were used in the probing of the local structure of PBZT samples that exhibit a normal or relaxor ferroelectric behavior. They showed a considerable local disorder around Zr and Pb atoms in the samples of tetragonal or cubic long-range order symmetry. The intensity of the E(TO3) mode in the Raman spectra of PBZT relaxor samples remains constant at temperatures lower than Tm, which has proven the stabilization of the correlation process between nanodomains.

  18. Multiwall carbon nanotubes doped ferroelectric liquid crystal composites: A study of modified electrical behavior

    NASA Astrophysics Data System (ADS)

    Neeraj; Raina, K. K.

    2014-02-01

    We systematically investigated the role of carbon nanotubes and their nature of interaction with the high polarization ferroelectric liquid crystal molecules that causes a change in the dynamic behavior of the liquid crystals. The carbon nanotubes were functionalized with carboxyl group (-COOH) before dispersion in order to enhance their stability in the liquid crystal medium. For the systematic investigation of a non linear behavior of dispersed composite systems, results for various physical properties were determined by thermal, morphological and dielectric studies in the planer aligned 5 μm thickness cells. An effort has also gone into detail to investigate these properties with varying concentration (0.02 wt%, 0.05 wt% and 0.1 wt%) of multiwall carbon nanotubes. The various carbon nanotubes doped ferroelectric liquid crystal thin film composites have shown enhanced dielectric strength and dielectric permittivity values as compared to the undoped sample.

  19. Role of point defects in bipolar fatigue behavior of Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3} modified (Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} relaxor ceramics

    SciTech Connect

    Kumar, Nitish Ansell, Troy Y.; Cann, David P.

    2014-04-21

    Lead-free Bi(Mg{sub 1/2}Ti{sub 1/2})O{sub 3}-(Bi{sub 1/2}K{sub 1/2})TiO{sub 3}-(Bi{sub 1/2}Na{sub 1/2})TiO{sub 3} (BMT-BKT-BNT) ceramics have been shown to exhibit large electromechanical strains under high electric fields along with negligible fatigue under strong electric fields. To investigate the role of point defects on the fatigue characteristics, the composition 5BMT-40BKT-55BNT was doped to incorporate acceptor and donor defects on the A and B sites by adjusting the Bi/Na and Ti/Mg stoichiometries. All samples had pseudo-cubic symmetries based on x-ray diffraction, typical of relaxors. Dielectric measurements showed that the high and low temperature phase transitions were largely unaffected by doping. Acceptor doping resulted in the observation of a typical ferroelectric-like polarization with a remnant polarization and strain hysteresis loops with significant negative strain. Donor-doped compositions exhibited characteristics that were indicative of an ergodic relaxor phase. Fatigue measurements were carried out on all of the compositions. While the A-site acceptor-doped composition showed a small degradation in maximum strain after 10{sup 6} cycles, the other compositions were essentially fatigue free. Impedance measurements were used to identify the important conduction mechanisms in these compositions. As expected, the presence of defects did not strongly influence the fatigue behavior in donor-doped compositions owing to the nature of their reversible field-induced phase transformation. Even for the acceptor-doped compositions, which had stable domains in the absence of an electric field at room temperature, there was negligible degradation in the maximum strain due to fatigue. This suggests that either the defects introduced through stoichiometric variations do not play a prominent role in fatigue in these systems or it is compensated by factors like decrease in coercive field, an increase in ergodicity, symmetry change, or other factors.

  20. Effect of point defects on thermal depoling behavior of bismuth layer-structured ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Zeng, Tao; Yan, Haixue; Reece, Michael J.

    2010-11-01

    Effect of point defects on the thermal depoling behavior of bismuth layer-structured ferroelectric Bi2WO6 (BW) and Sr2Bi4Ti5O18 (SBT) ceramics was investigated. Point defects in BW ceramics formed defect dipoles that interacted with the ferroelectric domain structure. These defect dipoles produced pinched polarization-electric field (P-E) hysteresis loops and an irreversible reduction in d33 after annealing below 200 °C. They became decoupled and randomized above 200 °C, and the d33 of BW became stable with increasing temperature from 200 °C up to its Curie point. SBT ceramics with low defect concentration showed symmetric P-E hysteresis loops and good piezoelectric stability with increasing temperature.

  1. Macroscopic behavior of a bar undergoing the paraelectric-ferroelectric phase transformation

    NASA Astrophysics Data System (ADS)

    Jiang, Qing

    1993-10-01

    R ECENT WORK of the author has developed a continuum model for the paraelectric—ferroelectric phase transformation. The present paper describes the detailed implications of this model when it has been supplemented with constitutive information pertaining to the phase transformation. An explicit Helmholtz potential has been constructed to characterize a hypothetical crystal capable of undergoing the paraelectric-ferroelectric phase transformation under the influence of applied electric fields or thermomechanical loads. The hysteretic macroscopic behavior associated with the phase transformation, induced by variation of temperature, application of electric fields and mechanical loads, has been studied. Some of the predictions have been compared qualitatively with experimental observations. The entire analysis is carried out within a one-dimensional setting.

  2. Memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} ferroelectric tunnel junctions

    SciTech Connect

    Wen, Zheng; Wu, Di Li, Aidong

    2014-08-04

    We demonstrate memristive behaviors in Pt/BaTiO{sub 3}/Nb:SrTiO{sub 3} metal/ferroelectric/semiconductor ferroelectric tunnel junctions, in which the semiconductor electrode can be switched between the accumulated and the depleted states by polarization reversal in the BaTiO{sub 3} barrier via the ferroelectric field effect. An extra barrier, against electron tunneling, forms in the depleted region of the Nb:SrTiO{sub 3} electrode surface, which together with the ferroelectric barrier itself modulate the tunneling resistance with the change of effective polarization. Continuous resistance modulation over four orders of magnitude is hence achieved by application of programmed voltage pulses with different polarity, amplitude, and repetition numbers, as a result of the development of the extra barrier.

  3. Dielectric properties of PbNb{sub 2}O{sub 6} ferroelectric ceramics at cryogenic temperatures

    SciTech Connect

    Guerra, J. de los S; Venet, M.; Garcia, D.; Eiras, J. A.; Guerrero, F.

    2007-08-06

    Complex dielectric permittivity measurements in PbNb{sub 2}O{sub 6} ceramics were performed in a frequency and temperature range of 1 kHz-1 MHz and from 15 to 900 K, respectively. The results revealed two dielectric anomalies showing typical characteristics of relaxor ferroelectric materials at cryogenic temperatures. Comparison with other tetragonal tungsten bronze (TTB) structure-type materials suggests the existence of successive phase transitions, which until now were not reported. The observed low temperature dielectric behaviors seem to be due to intrinsic physical characteristics related to the TTB structure.

  4. Stress effects in ferroelectric perovskite thin-films

    NASA Astrophysics Data System (ADS)

    Zednik, Ricardo Johann

    The exciting class of ferroelectric materials presents the engineer with an array of unique properties that offer promise in a variety of applications; these applications include infra-red detectors ("night-vision imaging", pyroelectricity), micro-electro-mechanical-systems (MEMS, piezoelectricity), and non-volatile memory (NVM, ferroelectricity). Realizing these modern devices often requires perovskite-based ferroelectric films thinner than 100 nm. Two such technologically important material systems are (Ba,Sr)TiO3 (BST), for tunable dielectric devices employed in wireless communications, and Pb(Zr,Ti)O3 (PZT), for ferroelectric non-volatile memory (FeRAM). In general, the material behavior is strongly influenced by the mechanical boundary conditions imposed by the substrate and surrounding layers and may vary considerably from the known bulk behavior. A better mechanistic understanding of these effects is essential for harnessing the full potential of ferroelectric thin-films and further optimizing existing devices. Both materials share a common crystal structure and similar properties, but face unique challenges due to the design parameters of these different applications. Tunable devices often require very low dielectric loss as well as large dielectric tunability. Present results show that the dielectric response of BST thin-films can either resemble a dipole-relaxor or follow the accepted empirical Universal Relaxation Law (Curie-von Schweidler), depending on temperature. These behaviors in a single ferroelectric thin-film system are often thought to be mutually exclusive. In state-of-the-art high density FeRAM, the ferroelectric polarization is at least as important as the dielectric response. It was found that these properties are significantly affected by moderate biaxial tensile and compressive stresses which reversibly alter the ferroelastic domain populations of PZT at room temperature. The 90-degree domain wall motion observed by high resolution

  5. Nanoscale studies of switching behavior of ferroelectric thin films by using piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Wu, Dong

    The work presented in this dissertation is focused on the study of ferroelectric thin films using the method of Piezo-response Force Microscopy (PFM) with several modifications specific to ferroelectrics. In this research, the main motivation is the study of polarization-reversal mechanisms for different sizes of very small-scale (0.5-5 mum size) ferroelectric capacitors in possible applications to ferroelectric random-access-memory devices (FeRAM). In order to make such FeRAM devices more competitive with other types of nonvolatile memory technologies such as phase-change random access memory (PRAM) and magneto-resistive random access memory (MRAM), etc., it is necessary to increase the integration density and therefore reduce bit-cell size. This in turn requires a detailed understanding of (and therefore studies of) the switching properties of small-scale ferroelectric capacitors at the micrometer and sub-micrometer size scale. With traditional methods such as the polarization-hysteresis-loop measurement and the transient-switching-current measurement, such switching properties at the sub-micrometer or nanometer scale are difficult to obtain. This is due to the difficulty of electrically contacting each individual capacitor and also due to the drastically reduced electric signal at such a small scale. In addition, these methods do not provide needed spatially-resolved information about local switching. By using different experimental approaches based on PFM, all of these problems were solved and now one can directly study the switching behavior of these ferroelectric capacitors (as shown in this thesis) through observing and quantifying their PFM images. Also this thesis also presents a detailed description of PFM theory as well as the modified PFM experimental setup. In this thesis we present studies of ferroelectric thin films of two different types: polycrystalline and epitaxial. Each film has a different texture and therefore different interface defects which

  6. Experimental studies on physical deterioration and electrical fatigue behavior in ferroelectric polymers

    NASA Astrophysics Data System (ADS)

    He, Xiangtong

    Ferroelectric materials are widely used in various electronic applications based upon their excellent electrical bi-stabilities and dielectric performance in response to the applied electric field. They have been utilized to make nonvolatile electronic memories by exploiting the hysteretic behavior and high energy density capacitors in regard to the high capability of electrical energy storage. One critical issue is that the ferroelectrics are required to endure a large number of electrical cycles. A large body of scientific efforts has been devoted to high fatigue failure resistance of ferroelectric-based electronic devices. Fatigue failure of ferroelectric materials still needs to be solved. It is the objective of this work to explore the intrinsic origin of fatigue failure mechanisms. In this study, it was found that electric-field-induced stress relaxation in α-phase poly(vinylidene fluoride) (PVDF) films can be well described by using the Kohlraush function groups, also known as the stretched exponential relaxation function. The electric strength of the dielectric is strongly dependent on its elastic properties due to the electromechanical coupling effect. Our fitting result of the stretched exponent is in accordance with a Weibull cumulative distribution function. This indicates that the elastic properties of insulating polymers are crucial to the capability of electrical energy storage. In ferroelectric materials, the electromechanical coupling may be indicative of the microscopic origin of polarization fatigue. Further experiments were focused on the polarization fatigue in semi-crystalline poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] copolymers films, whose ferroelectric response is superior to PVDF homopolymer films. Fatigue resistance of normal virgin P(VDF-TrFE) films was compared to that of P(VDF-TrFE) films modulated by using magnetic field. It was shown that normal P(VDF-TrFE) films exhibit a higher fatigue resistance. The artificially

  7. Electron-beam-induced ferroelectric domain behavior in the transmission electron microscope: Toward deterministic domain patterning

    NASA Astrophysics Data System (ADS)

    Hart, James L.; Liu, Shi; Lang, Andrew C.; Hubert, Alexander; Zukauskas, Andrius; Canalias, Carlota; Beanland, Richard; Rappe, Andrew M.; Arredondo, Miryam; Taheri, Mitra L.

    2016-11-01

    We report on transmission electron microscope beam-induced ferroelectric domain nucleation and motion. While previous observations of this phenomenon have been reported, a consistent theory explaining induced domain response is lacking, and little control over domain behavior has been demonstrated. We identify positive sample charging, a result of Auger and secondary electron emission, as the underlying mechanism driving domain behavior. By converging the electron beam to a focused probe, we demonstrate controlled nucleation of nanoscale domains. Molecular dynamics simulations performed are consistent with experimental results, confirming positive sample charging and reproducing the result of controlled domain nucleation. Furthermore, we discuss the effects of sample geometry and electron irradiation conditions on induced domain response. These findings elucidate past reports of electron beam-induced domain behavior in the transmission electron microscope and provide a path towards more predictive, deterministic domain patterning through electron irradiation.

  8. Incommensurate modulations of relaxor ferroelectric Ca0.24Ba0.76Nb2O6 (CBN24) and Ca0.31Ba0.69Nb2O6 (CBN31).

    PubMed

    Graetsch, Heribert A; Pandey, Chandra Shehkar; Schreuer, Jürgen; Burianek, Manfred; Mühlberg, Manfred

    2014-08-01

    CBN crystals show a one- and a two-dimensionally modulated modification. The former is isotypic with orthorhombic Ba4Na2Nb10O30 and the latter with the tetragonal tungsten bronze type of crystal structure. The orthorhombic form irreversibly transforms to the tetragonal polymorph at the ferroelectric phase transition near 603 K. Orthorhombic and tetragonal CBN24 slightly differ in the distribution of the Ba and Ca atoms over the incompletely filled Me1 and Me2 sites. The tetragonal symmetry is further broken in orthorhombic CBN24 by different amplitudes of the positional modulations of O atoms which are symmetrically equivalent in the TTB structure. A similar orthorhombic phase of CBN31 could be obtained by quenching from 1473 K.

  9. Enhancing electromechanical properties of lead-free ferroelectrics with bilayer ceramic/ceramic composites.

    PubMed

    Ayrikyan, Azatuhi; Rojas, Virginia; Molina-Luna, Leopoldo; Acosta, Matias; Koruza, Jurij; Webber, Kyle G

    2015-06-01

    The macroscopic electromechanical behavior of lead-free bilayer composites was characterized at room temperature. One layer consisted of a nonergodic relaxor, (Bi1/2Na1/2)TiO3-7BaTiO3, with an electric-field-induced longrange ferroelectric order, whereas the other is understood to be an ergodic relaxor [(Bi1/2Na1/2)TiO3-25SrTiO3] that undergoes a reversible electric-field-induced macroscopic nonpolar-to-polar transition. Microstructural evidence of a bilayer with low diffusion between the two components is also demonstrated. By taking advantage of the different macroscopic strain- and polarization-electric-field responses of the two constituents, internal mechanical and electrical fields can be developed that enhance the unipolar strain over that expected by a rule of mixtures approximation, thereby improving the properties needed for application of such materials to actuator systems. It is possible through further tailoring of the volume fractions and macroscopic properties of the constituents to optimize the electromechanical properties of multilayer lead-free ferroelectrics.

  10. Relaxor Behavior and Dielectric Relaxation in Lead-Free Solid Solutions of (1 - x)(Bi0.5Na0.5TiO3)- x(SrNb2O6)

    NASA Astrophysics Data System (ADS)

    Bajpai, P. K.; Singh, K. N.; Tamrakar, Preeti

    2016-02-01

    Lead-free compositions (1 - x) (Bi0.5Na0.5TiO3)- x(SrNb2O6) (BNT-SN) are synthesized by a simple solid state reaction route. SN diffuse in distorted perovskite BNT for low concentrations of SN ( x ≤ 0.03) and are stabilized in rhombohedral perovskite phase with experimentally observed relative density of the ceramics >92%. A temperature-dependent dielectric response exhibits a broad dielectric peak that shows frequency-dependent shifts towards higher temperatures reflecting typical relaxor behavior. Modified Curie-Weiss law and Lorentz-type empirical relationships are used to fit the dielectric data that exhibit almost complete diffuse phase transition characteristics. In addition, significant dielectric dispersion is observed in a low-frequency regime in both components of the dielectric response and a small dielectric relaxation peak is observed. Cole-Cole plots indicate the poly-dispersive nature of the dielectric relaxation.

  11. Observation of adsorption behavior of biomolecules on ferroelectric crystal surfaces with polarization domain patterns

    NASA Astrophysics Data System (ADS)

    Nakayama, Tomoaki; Isobe, Akiko; Ogino, Toshio

    2016-08-01

    Lithium tantalate (LiTaO3) is one of the ferroelectric crystals that exhibit spontaneous polarization domain patterns on its surface. We observed the polarization-dependent adsorption of avidin molecules, which are positively charged in a buffer solution at pH 7.0, on LiTaO3 surfaces caused by electrostatic interaction at an electrostatic double layer using atomic force microscopy (AFM). Avidin adsorption in the buffer solution was confirmed by scratching the substrate surfaces using the AFM cantilever, and the adsorption patterns were found to depend on the avidin concentration. When KCl was added to the buffer solution to weaken the electrostatic double layer interaction between avidin molecules and LiTaO3 surfaces, adsorption domain patterns disappeared. From the comparison between the adsorption and chemically etched domain patterns, it was found that avidin molecule adsorption is enhanced on negatively polarized domains, indicating that surface polarization should be taken into account in observing biomolecule behaviors on ferroelectric crystals.

  12. The role of tetragonal side morphotropic phase boundary in modified relaxor-PbTiO3 crystals for high power transducer applications

    NASA Astrophysics Data System (ADS)

    Kong, Lingping; Liu, Gang; Zhang, Shujun; Liu, Haozhe

    2013-10-01

    Morphotropic phase boundary (MPB) in ferroelectric materials leads to improved properties due to the structural instability. The manganese modified Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals with MPB composition were investigated, the structure/property relationship was established. The tetragonal side MPB (coexistence of 91% tetragonal and 9% monoclinic phases) was confirmed by X-ray synchrotron data, while relaxor behavior was detected by Raman characterization and dielectric measurement. Crystals with such MPB composition possess high "figure of merit" (d33.Q33 ˜ 106 pC/N), being one order higher when compared with their pure rhombohedral counterparts. Together with high Curie temperature (˜229 °C) and temperature stability of properties, demonstrating a promising candidate for high power transducer applications.

  13. Large structural modulations in the relaxor ferroelectric and intermediate state of strontium rich members (x&2gt;0.6) of the SrxBa1-xNb2O6 (sbn) solid solution series

    NASA Astrophysics Data System (ADS)

    Graetsch, H. A.

    2017-02-01

    The amplitudes of the positional, occupational and adp modulations of sbn mixed crystals are strongly enhanced for high strontium contents. The increase of structural modulations is accompanied by reduced spontaneous electric polarization largely due to smaller off-center shifts of the niobium atoms. Beyond the room temperature ferroelectric - intermediate transition near x=0.77, anomal large U33 atomic displacement parameters of the niobium atoms indicate static disorder caused by loss of orientational coupling between residual shifts of Nb atoms in neighboring NbO6 octahedra. Change of satellite intensities show a reduction from two-dimensional to one-dimensional modulation which is not consistent with tetragonal symmetry. The pseudo-tetragonally twinned crystal structure of sbn82 was refined in the orthorhombic super-space group A2mm(½0γ)000. The apparent tetragonal symmetry of the other investigated sbn samples also seems to be due to pseudo tetragonal twinning with equal twin volumes. The modulations mainly consist of cooperatively tilted NbO6 octahedra and wave-like ordered incomplete occupation of the largest cation sites (Me2a and b) by Ba2+ and Sr2+. Furthermore, the atomic displacement parameters of the Me2 sites are strongly modulated.

  14. Energy Harvesting Utilizing Stress Induced Phase Transformation in Ferroelectric Piezocrystals

    DTIC Science & Technology

    2013-03-14

    of a phase change transducer configured as a Tonpilz transducer employing mechanical pre- stress, adjustable electronic pre-stress and a single...of another transducer 70 utilizing a Tonpilz configuration with a magnetostrictive pre-stress component 72. Magnetostrictive pre- stress component...entitled “Crystalline Relaxor-Ferroelectric Phase Transition Transducer .” STATEMENT OF GOVERNMENT INTEREST [0002] The invention described herein

  15. Relaxor-PT Single crystals: Observations and Developments

    PubMed Central

    Zhang, Shujun; Shrout, Thomas R.

    2011-01-01

    Relaxor-PT based ferroelectric single crystals Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZNT) and Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMNT) attracted lot of attentions in last decade due to their ultra high electromechanical coupling factors and piezoelectric coefficients. However, owing to a strongly curved morphotropic phase boundary (MPB), the usage temperature of these perovskite single crystals is limited by TRT - the rhombohedral to tetragonal phase transition temperature, which occurs at significantly lower temperatures than the Curie temperature TC. Furthermore, the low mechanical quality factors and coercive fields of these crystals, usually being on the order of ~70 and 2–3kV/cm, respectively, restrict their usage in high power applications. Thus, it is desirable to have high performance crystals with high temperature usage range and high power characteristics. In this survey, different binary and ternary crystal systems were explored, with respect to their temperature usage range, general trends of dielectric and piezoelectric properties of relaxor-PT crystal systems were discussed related to their TC/TRT. In addition, two approaches were proposed to improve mechanical Q values, including acceptor dopant strategy, analogous to “hard” polycrystalline ceramics, and anisotropic domain engineering configurations. PMID:20889397

  16. Ferroelectric Transition and Curie—Weiss Behavior in Some Filled Tungsten Bronze Ceramics

    NASA Astrophysics Data System (ADS)

    Zhu, Xiao-Li; Chen, Xiang-Ming

    2014-01-01

    Ferroelectric transitions in filled tungsten bronze ceramics Sr4R2Ti4Nb6O30, Sr5RTi3Nb7O30 (R=La, Nb, Sm & Eu) and Ba4Nd2Ti4Nb6O30 are investigated with differential scanning calorimetry (DSC) and the Curie—Weiss law fitting to the dielectric constant. The magnitude of the Curie-Weiss constant C ~ 105 suggests displacement-type ferroelectric transition in the present compounds. The large ΔT difference between dielectric maximum temperature Tm and Curie—Weiss temperature T0) values indicate the difficult formation of ferroelectric domains or polar nanoregions in the present compounds and also the characteristics of the first order ferroelectric transition. Three categories are suggested for the ferroelectric transition in the above tungsten bronzes. The ferroelectric transition exhibits large thermal hysteresis. According to the DSC results, gradual recovery of the endothermic peak occurs after aging at temperature below the Curie point, indicating the gradual stability of the ferroelectric phase after cooling from the high-temperature para-electric phase. The relationship between the Curie—Weiss law fitting parameters and the nature of the ferroelectric transition is modified for the filled tungsten bronzes.

  17. Frequency-dependent ferroelectric behavior of BaMn3Ti4O14.25 at room temperature

    NASA Astrophysics Data System (ADS)

    Hossain, Muhammad E.; Liu, Shuangyi; O'Brien, Stephen; Li, Jackie

    2015-07-01

    We report the activation field and selective frequency-dependent ferroelectric behavior of BaMn3Ti4O14.25 (BMT-134) at room temperature. BMT-134, a recently discovered multiferroic complex oxide, exhibits antiferromagnetic and ferroelectric behavior and belongs to the hollandite crystal class. The microstructure can be manipulated through processing conditions to prepare a nanocrystalline textured tablet. We measured polarization-electric field (P-E) hysteresis loops and strain-electric field butterfly loops as a function of frequency in order to investigate the AC dynamics of domain switching and strain behavior. Under an electric field loading condition, a clear hysteresis loop of the electric field-displacement curve is obtained at 50 Hz, indicating that room temperature ferroelectricity is attainable under the right processing conditions. When the frequency is increased to 500 Hz, the coercive field also increases, until the frequency reaches 5 kHz, at which point the electric field versus electric displacement becomes linear indicating the limit of domain switching at high frequency.

  18. Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

    NASA Astrophysics Data System (ADS)

    Shimizu, Takao; Yokouchi, Tatsuhiko; Oikawa, Takahiro; Shiraishi, Takahisa; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Gruverman, Alexei; Funakubo, Hiroshi

    2015-03-01

    The ferroelectric properties of the (Hf0.5Zr0.5)O2 films on Pt/Ti/SiO2/Si substrate are investigated. It is found that the films crystallized by annealing in O2 and N2 atmospheres have similar crystal structures as well as remanent polarization and coercive fields. Weak temperature and frequency dependences of the ferroelectric properties indicate that the hysteretic behavior in HfO2-based films originates not from the mobile defects but rather from the lattice ionic displacement, as is the case of the typical ferroelectric materials.

  19. Reconciling Local Structure Disorder and the Relaxor State in (Bi1/2Na1/2)TiO3-BaTiO3

    PubMed Central

    Groszewicz, Pedro B.; Gröting, Melanie; Breitzke, Hergen; Jo, Wook; Albe, Karsten; Buntkowsky, Gerd; Rödel, Jürgen

    2016-01-01

    Lead-based relaxor ferroelectrics are key functional materials indispensable for the production of multilayer ceramic capacitors and piezoelectric transducers. Currently there are strong efforts to develop novel environmentally benign lead-free relaxor materials. The structural origins of the relaxor state and the role of composition modifications in these lead-free materials are still not well understood. In the present contribution, the solid-solution (100-x)(Bi1/2Na1/2)TiO3-xBaTiO3 (BNT-xBT), a prototypic lead-free relaxor is studied by the combination of solid-state nuclear magnetic resonance (NMR) spectroscopy, dielectric measurements and ab-initio density functional theory (DFT). For the first time it is shown that the peculiar composition dependence of the EFG distribution width (ΔQISwidth) correlates strongly to the dispersion in dielectric permittivity, a fingerprint of the relaxor state. Significant disorder is found in the local structure of BNT-xBT, as indicated by the analysis of the electric field gradient (EFG) in 23Na 3QMAS NMR spectra. Aided by DFT calculations, this disorder is attributed to a continuous unimodal distribution of octahedral tilting. These results contrast strongly to the previously proposed coexistence of two octahedral tilt systems in BNT-xBT. Based on these results, we propose that considerable octahedral tilt disorder may be a general feature of these oxides and essential for their relaxor properties. PMID:27545094

  20. Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

    NASA Astrophysics Data System (ADS)

    Yuan, G. L.; Liu, J.-M.; Wang, Y. P.; Wu, D.; Zhang, S. T.; Shao, Q. Y.; Liu, Z. G.

    2004-04-01

    The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO3-type perovskite thin films Pb(Zr0.52Ti0.48)O3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)2+ layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range.

  1. Coexisting ferroelectric and paraelectric phases in electron beam irradiated P(VDF-TrFE) films

    NASA Astrophysics Data System (ADS)

    Kim, Jae Woong; Lee, Tae Kwon; Jung, Jong Hoon; Shin, Sunhyeop; Lee, Byoung Wan; Ko, Jae-Hyeon

    2016-12-01

    We report on structural, electrical, and Raman investigations of phase changes induced in P(VDF-TrFE) films by electron beam irradiation. With increasing electron beam dose, the ferroelectric β-phase is weakened because of reductions in the coercive field, remnant polarization, and Curie temperature. Finally, highly dosed (9.38 × 1016 cm-2) P(VDF-TrFE) shows a paraelectric α-phase. A Vogel-Folcher type relaxor behavior becomes strong with the decreasing freezing temperature and the increasing activation energy. From the Raman scattering measurement, we observed that both the α- and the β-phases coexist irrespective of the electron beam irradiation and that the temperature dependences of the α- and β-phases are quite different. The ratio of the intensity of the α-phase to that of the β-phase sharply increases at a certain temperature, at which polar nanoregions may disappear.

  2. Ferroelectric Pump

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    2000-01-01

    A ferroelectric pump has one or more variable volume pumping chambers internal to a housing. Each chamber has at least one wall comprising a dome shaped internally prestressed ferroelectric actuator having a curvature and a dome height that varies with an electric voltage applied between an inside and outside surface of the actuator. A pumped medium flows into and out of each pumping chamber in response to displacement of the ferroelectric actuator. The ferroelectric actuator is mounted within each wall and isolates each ferroelectric actuator from the pumped medium, supplies a path for voltage to be applied to each ferroelectric actuator, and provides for positive containment of each ferroelectric actuator while allowing displacement of the entirety of each ferroelectric actuator in response to the applied voltage.

  3. Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO3 thin films

    NASA Astrophysics Data System (ADS)

    Lu, Zeng-Xing; Song, Xiao; Zhao, Li-Na; Li, Zhong-Wen; Lin, Yuan-Bin; Zeng, Min; Zhang, Zhang; Lu, Xu-Bing; Wu, Su-Juan; Gao, Xing-Sen; Yan, Zhi-Bo; Liu, Jun-Ming

    2015-10-01

    We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage (I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures (< 253 K), the I-V curve shows an open circuit voltage (OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures (> 253 K), the I-V behaviors are governed by both space-charge-limited conduction (SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of > 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects. Project supported by the National Natural Science Foundation of China (Grant Nos. 51272078 and 51332007), the State Key Program for Basic Research of China (Grant No 2015CB921202), the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme, China (2014), the International Science & Technology Cooperation Platform Program of Guangzhou, China (Grant No. 2014J4500016), and the Program for Changjiang Scholars and Innovative Research Team in University of China (Grant No. IRT1243).

  4. Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

    NASA Astrophysics Data System (ADS)

    M. Bedoya-Hincapié, C.; H. Ortiz-Álvarez, H.; Restrepo-Parra, E.; J. Olaya-Flórez, J.; E. Alfonso, J.

    2015-11-01

    The ferroelectric response of bismuth titanate Bi4Ti3O12 (BIT) thin film is studied through a Monte Carlo simulation of hysteresis loops. The ferroelectric system is described by using a Diffour Hamiltonian with three terms: the electric field applied in the z direction, the nearest dipole-dipole interaction in the transversal (x-y) direction, and the nearest dipole-dipole interaction in the direction perpendicular to the thin film (the z axis). In the sample construction, we take into consideration the dipole orientations of the monoclinic and orthorhombic structures that can appear in BIT at low temperature in the ferroelectric state. The effects of temperature, stress, and the concentration of pinned dipole defects are assessed by using the hysteresis loops. The results indicate the changes in the hysteresis area with temperature and stress, and the asymmetric hysteresis loops exhibit evidence of the imprint failure mechanism with the emergence of pinned dipolar defects. The simulated shift in the hysteresis loops conforms to the experimental ferroelectric response. Project sponsored by the research departments of the Universidad Nacional de Colombia DIMA and DIB under Project 201010018227-“Crecimiento y caracterización eléctrica y estructural de películas delgadas de BixTiyOz producidas mediante Magnetrón Sputtering” and Project 12920-“Desarrollo teóricoexperimental de nanoestructuras basadas en Bismuto y materiales similares” and “Bisnano Project.”

  5. The polarizability model for ferroelectricity in perovskite oxides.

    PubMed

    Bussmann-Holder, Annette

    2012-07-11

    This article reviews the polarizability model and its applications to ferroelectric perovskite oxides. The motivation for the introduction of the model is discussed and nonlinear oxygen ion polarizability effects and their lattice dynamical implementation outlined. While a large part of this work is dedicated to results obtained within the self-consistent-phonon approximation, nonlinear solutions of the model are also handled, which are of interest to the physics of relaxor ferroelectrics, domain wall motions, and incommensurate phase transitions. The main emphasis is to compare the results of the model with experimental data and to predict novel phenomena.

  6. Influence of structural evolution on energy storage properties in Bi0.5Na0.5TiO3-SrTiO3-NaNbO3 lead-free ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Li, Feng; Zhai, Jiwei; Shen, Bo; Liu, Xing; Yang, Ke; Zhang, Yang; Li, Peng; Liu, Baihui; Zeng, Huarong

    2017-02-01

    Lead-free (1-x)(0.8Bi0.5Na0.5TiO3-0.2SrTiO3)-xNaNbO3 (x = 0-0.1, abbreviated as BNT-ST-xNN) ceramics were fabricated by a conventional sintering route with pure perovskite phase via XRD analysis. Raman spectrum was exploited in order to give an insight into the variation of local structural evolution. All compositions exhibited an obvious evolution of dielectric relaxation behaviors. Dielectric and ferroelectric properties clarified that a crossover from nonergodic to ergodic relaxor properties was obtained with the addition of NN content. A relatively large energy storage density was obtained WRec ˜ 0.74 J/cm3 at 7 kV/mm for x = 0.05 at room temperature. Particularly, the energy storage properties exhibited temperature (25-160 °C) and frequency stability (0.1-20 Hz) with WRec around 0.6 J/cm3 at 6 kV/mm for x = 0.05 within the ergodic region. Pulsed discharging current waveforms were measured under different electric fields to detect the energy storage density and discharging speed behavior. An illustration of the charge-discharge process for the nonergodic and ergodic relaxor was depicted in order to disclose the difference of energy storage properties in BNT-ST-xNN system, and it is believed that this concept can be a guideline for fixing a position when designing a new energy-storage system for BNT-based relaxor ferroelectric ceramics.

  7. Enhanced piezoelectric response in the artificial ferroelectric polymer multilayers

    SciTech Connect

    Zhao, X. L.; Wang, J. L. E-mail: lin-tie@mail.sitp.ac.cn; Tian, B. B.; Liu, B. L.; Wang, X. D.; Sun, S.; Zou, Y. H.; Lin, T. E-mail: lin-tie@mail.sitp.ac.cn; Sun, J. L.; Meng, X. J.; Chu, J. H.

    2014-12-01

    An actuator with a high piezoelectric response, the ferroelectric polymer multilayer actuator, is described. The ferroelectric polymer multilayers consisting of alternative ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer and relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) (P(VDF-TrFE-CFE)) terpolymer with different periodicities and fixed total thickness are prepared by the Langmuir-Blodgett technique. Both X-ray diffraction and Raman spectroscopic measurements indicate that the structure of the multilayer with thin alternating layer is similar to that of the ferroelectric copolymer. Compared with that of the copolymer, it is found that the piezoelectric coefficient of the multilayer could be improved by 57%. We attributed the enhanced piezoelectric response of the multilayers to the internal electric fields that arises from the electrostatic couplings between different layers.

  8. Relaxor-based solid solutions for piezoelectric and electrostrictive applications

    NASA Astrophysics Data System (ADS)

    Alberta, Edward F.

    This thesis explores the dielectric, piezoelectric, and electrostrictive properties of a number of relaxor ferroelectric-based solid solution systems. The components of these solid solution systems have a variety of characteristics ranging from normal- to relaxor- to anti-ferroelectric. Some of the relaxor end-members investigated were Pb(In1/2Nb1/2)O3 [PIN], Pb(In1/2Ta1/2)O3 [PIT], Pb(Sc 1/2Nb1/2)O3 [PSN], Pb(Ni1/3Nb 2/3)O3 [PNN], Pb(Mg1/3Nb2/3)O 3 [PMN], and Pb(Zn1/3Nb2/3)O3 [PZN]. Several of these systems have Curie temperatures [Tc] that are among the highest known for MPB compositions. Some examples are PIN-0.38PT with a Tc of 319°C, PIT-0.38PT with a Tc of 248°C, and PSN 0.42PT with a Tc of 254°C. While these are slightly lower that those of typically found in PZT, the temperature dependence of the piezoelectric properties was found to be minimal. The electromechanical coupling coefficients were largely unchanged upon heating to as high as 150°C. This is approximately equal to the Tc of PMN-PT and PZN-PT and significantly exceeds the generally accepted maximum operating temperature for these materials. Many of the materials studied were found to have very large electromechanical coupling factors and produce extraordinarily high field-induced strains. Both PSN-0.42PT and PNN-0.15PZ-0.34PT were found to produce strain levels of ˜0.30% under unipolar drive with limited hysteresis. Peak-to-peak strain levels of as much as 0.60% were possible under bipolar drive conditions. Both of these MPB compositions had very large piezoelectric properties, with the slightly larger values of d33 = 810pC/N, kp = 0.69, kt = 0.56, and k33 = 0.80 occurring in PNN-PZ-PT. Each of the MPB compositions studied has features that can be exploited for specific applications. The combination of high Tc and coercive field found in both PIN-PT and Bi(Ni1/2T1/2)O3 -PT should allow these materials to be used at high drive levels and/or at high temperatures. The high strain, low hysteresis

  9. Effect of intrinsic point defects on ferroelectric polarization behavior of SrTiO3

    NASA Astrophysics Data System (ADS)

    Klyukin, Konstantin; Alexandrov, Vitaly

    2017-01-01

    The effect of a variety of intrinsic defects and defect clusters in bulk and thin films of SrTiO3 on ferroelectric polarization and switching mechanisms is investigated by means of density-functional-theory based calculations and the Berry phase approach. Our results show that both the titanium TiSr•• and strontium SrTi'' antisite defects induce ferroelectric polarization in SrTiO3, with the TiSr•• defect causing a more pronounced spontaneous polarization and higher activation barriers of polarization reversal than SrTi''. The presence of oxygen vacancies bound to the antisite defects can either enhance or diminish polarization depending on the configuration of the defect pair, but it always leads to larger activation barriers of polarization switching as compared to the antisite defects with no oxygen vacancies. We also show that the magnitude of spontaneous polarization in SrTiO3 can be tuned by controlling the degree of Sr/Ti nonstroichiometry. Other intrinsic point defects such as Frenkel defect pairs and electron small polarons also contribute to the emergence of ferroelectric polarization in SrTiO3.

  10. Unusual Strong Incommensurate Modulation in a Tungsten-Bronze-Type Relaxor PbBiNb5O15.

    PubMed

    Lin, Kun; Zhou, Zhengyang; Liu, Laijun; Ma, Hongqiang; Chen, Jun; Deng, Jinxia; Sun, Junliang; You, Li; Kasai, Hidetaka; Kato, Kenichi; Takata, Masaki; Xing, Xianran

    2015-10-28

    Pb- or Bi-based perovskite oxides have been widely studied and used because of their large ferroelectric polarization features induced by stereochemically active 6s(2) lone pair electrons. It is intriguing whether this effect could exist in other related systems. Herein, we designed and synthesized a mixed Pb and Bi A site polar compound, PbBiNb5O15, with the TTB framework. The as-synthesized material turns out to be a relaxor with weak macroscopic ferroelectricity but adopts strong local polarizations. What's more, unusual five orders of incommensurate satellite reflections with strong intensities were observed under the electron diffraction, suggesting that the modulation is highly developed with large amplitudes. The structural modulation was solved with a (3 + 1)D superspace group using high-resolution synchrotron radiation combined with anomalous dispersion X-ray diffraction technique to distinguish Pb from Bi. We show that the strong modulation mainly originates from lone-pair driven Pb(2+)-Bi(3+) ordering in the large pentagonal caves, which can suppress the local polarization in x-y plane in long ranges. Moreover, the as-synthesized ceramics display strong relaxor ferroelectric feature with transition temperature near room temperature and moderate dielectric properties, which could be functionalized to be electromechanical device materials.

  11. SISGR -- Domain Microstructures and Mechanisms for Large, Reversible and Anhysteretic Strain Behaviors in Phase Transforming Ferroelectric Materials

    SciTech Connect

    Wang, Yu U.

    2013-12-06

    This four-year project (including one-year no-cost extension) aimed to advance fundamental understanding of field-induced strain behaviors of phase transforming ferroelectrics. We performed meso-scale phase field modeling and computer simulation to study domain evolutions, mechanisms and engineering techniques, and developed computational techniques for nanodomain diffraction analysis; to further support above originally planned tasks, we also carried out preliminary first-principles density functional theory calculations of point defects and domain walls to complement meso-scale computations as well as performed in-situ high-energy synchrotron X-ray single crystal diffraction experiments to guide theoretical development (both without extra cost to the project thanks to XSEDE supercomputers and DOE user facility Advanced Photon Source).

  12. Supramolecular ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tayi, Alok S.; Kaeser, Adrien; Matsumoto, Michio; Aida, Takuzo; Stupp, Samuel I.

    2015-04-01

    Supramolecular chemistry uses non-covalent interactions to coax molecules into forming ordered assemblies. The construction of ordered materials with these reversible bonds has led to dramatic innovations in organic electronics, polymer science and biomaterials. Here, we review how supramolecular strategies can advance the burgeoning field of organic ferroelectricity. Ferroelectrics -- materials with a spontaneous and electrically reversible polarization -- are touted for use in non-volatile computer memories, sensors and optics. Historically, this physical phenomenon has been studied in inorganic materials, although some organic examples are known and strong interest exists to extend the search for ferroelectric molecular systems. Other undiscovered applications outside this regime could also emerge. We describe the key features necessary for molecular and supramolecular dipoles in organic ferroelectrics and their incorporation into ordered systems, such as porous frameworks and liquid crystals. The goal of this Review is to motivate the development of innovative supramolecular ferroelectrics that exceed the performance and usefulness of known systems.

  13. Origin of ferroelectric polarization in tetragonal tungsten-bronze-type oxides

    NASA Astrophysics Data System (ADS)

    Olsen, Gerhard Henning; Aschauer, Ulrich; Spaldin, Nicola A.; Selbach, Sverre Magnus; Grande, Tor

    2016-05-01

    The origin of ferroelectric polarization in tetragonal tungsten-bronze- (TTB-) type oxide strontium barium niobate (SBN) is investigated using first-principles density functional calculations. We study in particular the relationship between the polarization and the cation and vacancy ordering on alkali-earth metal lattice sites. Lattice dynamical calculations for paraelectric structures demonstrate that all cation configurations that can be accommodated in a 1 ×1 ×2 supercell result in a single unstable polar phonon, composed primarily of relative Nb-O displacements along the polar axis, as their dominant instability. The majority of the configurations also have a second octahedral tilt-mode instability which couples weakly to the polar mode. The existence of the tilt mode is strongly dependent on the local cation ordering, consistent with the fact that it is not found experimentally. Our results suggest that ferroelectricity in the SBN system is driven by a conventional second-order Jahn-Teller mechanism caused by the d0 Nb5 + cations, and demonstrate the strong influence of the size of Sr and Ba on the lattice distortions associated with polarization and octahedral tilting. Finally, we suggest a mechanism for the relaxor behavior in Sr-rich SBN based on Sr displacement inside pentagonal channels in the TTB structure.

  14. Ferroelectricity in Si-doped HfO2 revealed: a binary lead-free ferroelectric.

    PubMed

    Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V; Mikolajick, Thomas

    2014-12-23

    Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.

  15. Pathways towards ferroelectricity in hafnia

    NASA Astrophysics Data System (ADS)

    Huan, Tran Doan; Sharma, Vinit; Rossetti, George A.; Ramprasad, Rampi

    2014-08-01

    The question of whether one can systematically identify (previously unknown) ferroelectric phases of a given material is addressed, taking hafnia (HfO2) as an example. Low free energy phases at various pressures and temperatures are identified using a first-principles based structure search algorithm. Ferroelectric phases are then recognized by exploiting group theoretical principles for the symmetry-allowed displacive transitions between nonpolar and polar phases. Two orthorhombic polar phases occurring in space groups Pca21 and Pmn21 are singled out as the most viable ferroelectric phases of hafnia, as they display low free energies (relative to known nonpolar phases), and substantial switchable spontaneous electric polarization. These results provide an explanation for the recently observed surprising ferroelectric behavior of hafnia, and reveal pathways for stabilizing ferroelectric phases of hafnia as well as other compounds.

  16. Large electrocaloric effect in ferroelectric polymers near room temperature.

    PubMed

    Neese, Bret; Chu, Baojin; Lu, Sheng-Guo; Wang, Yong; Furman, E; Zhang, Q M

    2008-08-08

    Applying an electrical field to a polar polymer may induce a large change in the dipolar ordering, and if the associated entropy changes are large, they can be explored in cooling applications. With the use of the Maxwell relation between the pyroelectric coefficient and the electrocaloric effect (ECE), it was determined that a large ECE can be realized in the ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer at temperatures above the ferroelectric-paraelectric transition (above 70 degrees C), where an isothermal entropy change of more than 55 joules per kilogram per kelvin degree and adiabatic temperature change of more than 12 degrees C were observed. We further showed that a similar level of ECE near room temperature can be achieved by working with the relaxor ferroelectric polymer of P(VDF-TrFE-chlorofluoroethylene).

  17. Ferroelectric HfO2 for Emerging Ferroelectric Semiconductor Devices

    NASA Astrophysics Data System (ADS)

    Florent, Karine

    The spontaneous polarization in ferroelectrics (FE) makes them particularly attractive for non-volatile memory and logic applications. Non-volatile FRAM memories using perovskite structure materials, such as Lead Zirconate Titanate (PZT) and Strontium Bismuth Tantalate (SBT) have been studied for many years. However, because of their scaling limit and incompatibility with CMOS beyond 130 nm node, floating gate Flash memory technology has been preferred for manufacturing. The recent discovery of ferroelectricity in doped HfO2 in 2011 has opened the door for new ferroelectric based devices compatible with CMOS technology, such as Ferroelectric Field Effect Transistor (FeFET) and Ferroelectric Tunnel Junctions (FTJ). This work began with developing ferroelectric hysteresis characterization capabilities at RIT. Initially reactively sputtered aluminum doped HfO 2 films were investigated. It was observed that the composition control using co-sputtering was not achievable within the existing capabilities. During the course of this study, collaboration was established with the NaMLab group in Germany to investigate Si doped HfO2 deposited by Atomic Layer Deposition (ALD). Metal Ferroelectric Metal (MFM) devices were fabricated using TiN as the top and bottom electrode with Si:HfO2 thickness ranging from 6.4 nm to 22.9 nm. The devices were electrically tested for P-E, C-V and I-V characteristics. Structural characterizations included TEM, EELS, XRR, XRD and XPS/Auger spectroscopy. Higher remanant polarization (Pr) was observed for films of 9.3 nm and 13.1 nm thickness. Thicker film (22.9 nm) showed smaller Pr. Devices with 6.4 nm thick films exhibit tunneling behavior showing a memristor like I-V characteristics. The tunnel current and ferroelectricity showed decrease with cycling indicating a possible change in either the structure or the domain configurations. Theoretical simulations using the improved FE model were carried out to model the ferroelectric behavior of

  18. Dielectric and Ferroelectric Behavior of Bismuth-Doped Barium Titanate Ceramic Prepared by Microwave Sintering

    NASA Astrophysics Data System (ADS)

    Mahapatra, A.; Parida, S.; Sarangi, S.; Badapanda, T.

    2015-08-01

    Bismuth-doped barium titanate ceramics with the general formula Ba1- x Bi2 x/3TiO3 ( x = 0.0, 0.01, 0.025, 0.05) have been prepared by the solid state reaction technique. The phase formation and structural property of all compositions have been studied by x-ray diffraction (XRD) pattern and Rietveld refinement. XRD pattern reports the single phase tetragonal crystal system with space group of P4mm. All compositions have been sintered at 1100°C in a microwave furnace for 30 min. The variation of dielectric constant with respect to temperature and frequency was studied and it was found that the dielectric constant decreases whereas transition temperature increased with the increase in Bi content. The diffusivity parameter was calculated by the modified Curie-Weiss law and the diffusivity increased with the increase in Bi content. The ferroelectric property was studied by the P-E hysteresis loop and it was observed that the saturation polarization decreased, but the coercive field increased with Bi content. The optical band gap was calculated from UV-Visible spectroscopy and found to decrease with Bi content.

  19. Compressed H-bonds in solids. Pressure-dependent ferroelectric behavior of KDP/DKDP

    NASA Astrophysics Data System (ADS)

    Dolin, S. P.; Levin, A. A.; Mikhailova, T. Yu.

    2010-05-01

    Hydrostatic pressure effect on ferroelectric structural phase transition (SPT) in KDP (KH 2PO 4) and DKDP (KD 2PO 4) as typical examples of H-bonded solids is considered in the frames of pseudospin Hamiltonian, its parameters Ω(H/D) and J ij(H/D) describe the quantum motion of proton/deuteron along the H/D-bond and pair interaction between these nuclei at different bonds, respectively. These parameters are determined by means of the cluster non-empirical calculations (SCF, MP2-MP4, B3LYP) for the characteristic structural fragments of the compounds of interest. The clusters geometry was taken from the neutron-diffraction data, obtained for pressure values P = 0 and P = 16.5 kbar. The molecular field approximation (MFA) together with more refined Bethe cluster approach (BCA) were applied to study the T c of SPT on the base of the calculated values of Ω(H/D) and J ij(H/D). In agreement with the experiments for both techniques T c decreases with the growth of P due to the proton/deuteron transfer barrier width and height reduction as well as owing to the diminution of the protons/deuterons effective interaction. The related BCA results for KDP and DKDP are discussed in more details.

  20. Origin of the "waterfall" effect in phonon dispersion of relaxor perovskites.

    PubMed

    Hlinka, J; Kamba, S; Petzelt, J; Kulda, J; Randall, C A; Zhang, S J

    2003-09-05

    We have undertaken an inelastic neutron scattering study of the perovskite relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O3 with 8% PbTiO3 (PZN-8%PT) in order to elucidate the origin of the previously reported unusual kink on the low frequency transverse phonon dispersion curve (known as the "waterfall effect"). We show that its position (q(wf)) depends on the choice of the Brillouin zone and that the relation of q(wf) to the size of the polar nanoregions is highly improbable. The waterfall phenomenon is explained in the framework of a simple model of coupled damped harmonic oscillators representing the acoustic and optic phonon branches.

  1. Measuring and Altering Ferroelectric Domain Structures in Lead Perovskite Single-Crystals

    NASA Astrophysics Data System (ADS)

    Harker, John Chamberlain

    Relaxor ferroelectric single-crystal materials PMN-PT and PZN-PT are currently of interest to the scientific community due to their enhanced properties and possible role as next-generation piezoelectric transducers in applications such as sonar and medical ultrasound. One key phenomenon affecting both the properties and the mechanical integrity of these materials is the ferroelectric domain structure within the material. In this work we examine the morphology and behavior of domain structures in PMN-29%PT. In order to do this we first present details of the construction and testing of a working piezo-response force microscope (PFM), and then use the PFM to verify a new domain observation technique called "relief polishing". Relief polishing is shown to reveal surface domains in the same manner as acid etching, preserving domain details as small as 0.5mum. Using these two techniques, we then determine that cutting and polishing strongly affect the surface and subsurface ferroelectric domain structures in PMN-29%PT. Specifically, we show that saw cutting can create characteristic striated domain structures as deep as 130mum within a sample, while straight polishing creates a characteristic domain structure known as the "fingerprint" pattern to a depth proportional to the size of the polishing grit, on the order of 0--12mum for grits as large as 15mum. We hypothesize that most samples contain these "skin effect" domain structures. In consequence, it is suggested that researchers presenting experimental results on domain structures should report the physical treatment history of the samples along with the experimental data.

  2. Ferroelectric Fluoride Memory FET Development

    DTIC Science & Technology

    1993-10-01

    After’ First Metal Definition ..................... 53 Figure 3-30: Initial BMF FEMFETs Demonstrated Ferroelectric Behavior ................ 57 I Figure...as bismuth titanate. 2.0 INTRODUCTION The concept of a thin film ferroelectric memory field-effect transistor (FEMFET) is not new. The first FEMFET...candidate for these studies. BaF2, and MgF 2 have similar melting and evaporation temperatures, and their vapor pressures were also found to be comparable

  3. Ferroelectric/ferroelastic behavior and piezoelectric response of lead zirconate titanate thin films under nanoindentation

    SciTech Connect

    Koval, V.; Reece, M.J.; Bushby, A.J.

    2005-04-01

    The electromechanical response of pure lead zirconate titanate (PZT) and Mn-doped PZT thin ferroelectric films under nanoindentation forces of up to 500 mN was investigated. The stress-induced current transients were measured as a function of the externally applied load on films of different thicknesses using a spherical WC-Co cermet indenter of 500 {mu}m nominal radius. It was found that the quasi-static current generated through the direct piezoelectric effect is superimposed with a contribution from irreversible domain processes during the loading/unloading cycle. The film thickness dependency of the electrical transients and an asymmetry of the current-force curves are attributed to the in-plane clamping stress in the films produced by a dissimilar substrate. Analysis of corresponding charge-force hysteresis loops revealed a significant role for the residual stress state on the polarization switching in thin films. By the application of an indentation force, a portion of Barkhausen jumps was empirically estimated to increase as a consequence of reduction of the clamping effect on domains. The Rayleigh hysteretic charge-force curves showed recovery of the charge released during the load-unload stress cycle. For the thicker 700 nm films, the total charge released during loading was fully recovered with weak hysteresis. In contrast, strong in-plane clamping stresses in the 70 nm thick films are suggested to be reponsible for incomplete recovery upon unloading. A considerable domain-wall contribution to the electromechanical response was demonstrated by an enhanced polarization state, which was shown by an increase of the effective piezoelectric coefficient d{sub eff} of about 35% of its initial value for the thin films at a maximum force of 500 mN.

  4. All-atom effective models for first-principles simulations of the temperature-dependent behavior of complex ferroelectric oxides

    NASA Astrophysics Data System (ADS)

    Iniguez, Jorge; Wojdel, Jacek C.; Hermet, Patrick; Ghosez, Philippe; Zanolli, Zeila

    2011-03-01

    Since its introduction in the 90's, the first-principles effective-Hamiltonian method has been successfully used to simulate temperature-driven phenomena in increasingly complex ferroelectrics, from classic compound BaTi O3 to multiferroic BiFe O3 . Currently, the emergence of nano-structured materials -- e.g., in the form of ultra-thin films or short-period superlattices -- poses new challenges to the simulations, and the development of predictive models seems to require a reconsideration of the traditional approach. Of particular interest are cases in which novel interfacial effects determine the behavior, as in the PbTi O3 - SrTi O3 superlattices of Bousquet et al. [Nature 452, 7188 (2008)]. In such situations a large number of structural distortions may become active, and it may be difficult to decide which ones need to be included in the model. In order to tackle these difficulties, we are extending the first-principles effective-Hamiltonian method so as to retain a full atomistic description of the material, thus removing the so-called local mode approximation. I will describe our new approach and show preliminary results for PbTi O3 . Work funded by the Spanish DGI and the FP7 program of the EU.

  5. Manganese incorporation into ferroelectric lead titanate

    NASA Astrophysics Data System (ADS)

    Stoupin, Stanislav

    Substitution with 3d magnetic transition elements in ABO 3 ferroelectric perovskite host media is widely utilized to produce relaxor ferroelectrics. Many resulting solid solutions exhibit magnetoelectric properties affected by concentration levels of the introduced magnetic ions. For conventional material preparation techniques such as firing of mechanically mixed oxides, incorporation is often limited by 5 mol% concentration level. Doping at higher concentrations requires introduction of other substituents to compensate charge within the unit cell to promote formation of the perovskite phase. In contrast, molecular mixing of precursor materials at the initial phase of preparation procedure offers an advantage of achieving higher incorporation levels of the 3d elements without additional charge-compensating ions. Presented in this thesis is a new sol-gel procedure utilized for high level incorporation of 3d magnetic ions into ferroelectric lead titanate. The technique was applied to produce PbTi1-xMnxO 3 solid solution, a perovskite system promising for high degree of magnetoelectric coupling. Concentration dependent studies were performed to characterize structural, thermal, ferroelectric and magnetic properties of the material. The solubility limit of Mn has been found to be 20 mol% and the material remains tetragonally distorted. X-ray Absorption Spectroscopy confirms that local structural environment of Mn, Ti, and Pb is consistent with tetragonal symmetry of the unit cell. Increase in Mn concentration leads to reduction in melting point, broadening of the ferroelectric transition, reduction of the transition temperature and increase in dielectric constant of the material. At the solubility limit the system was found to be ferromagnetic below 50 K.

  6. Interaction of Terahertz Radiation with Ferroelectrics

    NASA Astrophysics Data System (ADS)

    Nelson, Keith

    2007-03-01

    Ferroelectric crystals have long been used as acoustic transducers and receivers. An extensive toolset has been developed for MHz-frequency acoustic wave generation, control, guidance, and readout. In recent years, an analogous toolset has been developed for terahertz wave transduction and detection. Femtosecond optical pulses irradiate ferroelectric crystals to generate responses in the 0.1-5 THz frequency range that are admixtures of electromagnetic and polar lattice vibrational excitations called phonon-polaritons. Spatiotemporal femtosecond pulse shaping may be used to generate additional optical pulses that arrive at specified times and sample locations for control and manipulation of the THz waves. Femtosecond laser machining may be used for fabrication of waveguides, resonators, and other structures that are integrated into the ferroelectric host crystal. Finally, real-space imaging of the THz fields can be executed with variably delayed femtosecond probe pulses, permitting direct visualization of THz wave spatial and temporal evolution. This ``polaritonics'' toolset enables multiplexed generation of arbitrary THz waveforms and use of the waveforms within the ferroelectric host crystal or after projection into free space or an adjacent medium. The polaritonics platform will be reviewed and several new developments and applications will be presented. These include spectroscopy of relaxor ferroelectrics, whose temperature-dependent dielectric responses in the GHz-THz regime reveal complex polarization dynamics on well separated fast and slow time scales; direct measurement of phonon-polariton lattice vibrational displacements through femtosecond time-resolved x-ray diffraction; generation of high polariton field amplitudes and pulse energies; use of large-amplitude polariton waves to drive nonlinear lattice vibrational responses; and enhancement of optical-to-THz conversion efficiency through a pseudo-phase-matching approach that circumvents the very large

  7. Domains in Ferroelectric Nanostructures

    NASA Astrophysics Data System (ADS)

    Gregg, Marty

    2010-03-01

    Ferroelectric materials have great potential in influencing the future of small scale electronics. At a basic level, this is because ferroelectric surfaces are charged, and so interact strongly with charge-carrying metals and semiconductors - the building blocks for all electronic systems. Since the electrical polarity of the ferroelectric can be reversed, surfaces can both attract and repel charges in nearby materials, and can thereby exert complete control over both charge distribution and movement. It should be no surprise, therefore, that microelectronics industries have already looked very seriously at harnessing ferroelectric materials in a variety of applications, from solid state memory chips (FeRAMs) to field effect transistors (FeFETs). In all such applications, switching the direction of the polarity of the ferroelectric is a key aspect of functional behavior. The mechanism for switching involves the field-induced nucleation and growth of domains. Domain coarsening, through domain wall propagation, eventually causes the entire ferroelectric to switch its polar direction. It is thus the existence and behavior of domains that determine the switching response, and ultimately the performance of the ferroelectric device. A major issue, associated with the integration of ferroelectrics into microelectronic devices, has been that the fundamental properties associated with ferroelectrics, when in bulk form, appear to change quite dramatically and unpredictably when at the nanoscale: new modes of behaviour, and different functional characteristics from those seen in bulk appear. For domains, in particular, the proximity of surfaces and boundaries have a dramatic effect: surface tension and depolarizing fields both serve to increase the equilibrium density of domains, such that minor changes in scale or morphology can have major ramifications for domain redistribution. Given the importance of domains in dictating the overall switching characteristics of a device

  8. Critical behavior near the Lifshitz point in Sn(2)P(2)(S(1 - x)Se(x))(6) ferroelectric semiconductors from thermal diffusivity measurements.

    PubMed

    Oleaga, A; Salazar, A; Kohutych, A A; Vysochanskii, Yu M

    2011-01-19

    The thermal diffusivity of the ferroelectric family Sn(2)P(2)(Se(x)S(1 - x))(6) (0 ≤ x ≤ 1) has been measured by a high-resolution ac photopyroelectric technique, using single crystals, with the aim of studying the evolution of the ferroelectric transition with Se doping. Its change from second order character to first order while passing the Lifshitz point (x approximately 0.28) has been evaluated, as well as the splitting of the transition at high Se concentrations. The critical behavior of the ferroelectric transition in terms of the different universality classes and their underlying physical dominant effects (tricriticality, long-range dipole interactions, Lifshitz point) has been discussed using thermal diffusivity measurements in the very close vicinity of the critical temperature. This study reveals that for Se concentrations around the Lifshitz point, long-range dipole interactions do not play a significant role and that the critical parameters are close to those predicted for the Lifshitz universality class.

  9. A flexible tactile-feedback touch screen using transparent ferroelectric polymer film vibrators

    NASA Astrophysics Data System (ADS)

    Ju, Woo-Eon; Moon, Yong-Ju; Park, Cheon-Ho; Choi, Seung Tae

    2014-07-01

    To provide tactile feedback on flexible touch screens, transparent relaxor ferroelectric polymer film vibrators were designed and fabricated in this study. The film vibrator can be integrated underneath a transparent cover film or glass, and can also produce acoustic waves that cause a tactile sensation on human fingertips. Poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] polymer was used as the relaxor ferroelectric polymer because it produces a large strain under applied electric fields, shows a fast response, and has excellent optical transparency. The natural frequency of this tactile-feedback touch screen was designed to be around 200-240 Hz, at which the haptic perception of human fingertips is the most sensitive; therefore, the resonance of the touch screen at its natural frequency provides maximum haptic sensation. A multilayered relaxor ferroelectric polymer film vibrator was also demonstrated to provide the same vibration power at reduced voltage. The flexible P(VDF-TrFE-CTFE) film vibrators developed in this study are expected to provide tactile sensation not only in large-area flat panel displays, but also in flexible displays and touch screens.

  10. Fragile morphotropic phase boundary and phase stability in the near-surface region of the relaxor ferroelectric (1 -x ) Pb (Z n1 /3N b2 /3) O3-x PbTi O3 : [001] field-cooled phase diagrams

    NASA Astrophysics Data System (ADS)

    Wang, Yaojin; Wang, Ding; Yuan, Guoliang; Ma, He; Xu, Feng; Li, Jiefang; Viehland, D.; Gehring, Peter M.

    2016-11-01

    We have examined the effects of field cooling on the phase diagram of the relaxor system (1 -x ) Pb (Z n1 /3N b2 /3) O3-x PbTi O3 (PZN-x PT ) for compositions near the morphotropic phase boundary (MPB). High-resolution diffraction measurements using Cu Kα x rays, which probe ≈3 μ m below the crystal surface, were made on field-cooled (FC) single-crystal specimens of PZN-4.5 %PT and PZN-6.5 %PT under electric fields of 1 and 2 kV/cm applied along [001] and combined with previous neutron diffraction data, which probe the entire crystal volume, for FC PZN-8 %PT [Ohwada et al., Phys. Rev. B 67, 094111 (2003), 10.1103/PhysRevB.67.094111]. A comparison to the zero-field-cooled (ZFC) PZN-x PT phase diagram reveals several interesting features: (1) The short-range monoclinic phase observed in the ZFC state on the low-PT side of the MPB is replaced by a monoclinic MA phase; (2) field cooling extends the tetragonal phase to higher temperatures and lower-PT concentrations; (3) the orthorhombic phase near the MPB is replaced by a monoclinic MC phase; (4) the vertical MPB in the ZFC phase diagram bends significantly towards the low-PT side in the FC state. These results demonstrate that both the phase stability and the nature of the MPB in PZN-PT within the near-surface regions are fragile in the presence of electric fields.

  11. Investigation of the ferroelectric switching behavior of P(VDF-TrFE)-PMMA blended films for synaptic device applications

    NASA Astrophysics Data System (ADS)

    Kim, E. J.; Kim, K. A.; Yoon, S. M.

    2016-02-01

    Synaptic plasticity can be mimicked by electronic synaptic devices. By using ferroelectric thin films as gate insulator for thin-film transistors (TFT), channel conductance can be defined as the synaptic plasticity, and gradually modulated by the variations in amounts of aligned ferroelectric dipoles. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]-poly(methyl methacrylate) (PMMA) blended films are chosen and their switching kinetics are investigated by using the Kolmogorov-Avrami-Ishibashi model. The switching time for ferroelectric polarization is sensitively influenced by the amplitude of applied electric field and volumetric ratio of ferroelectric beta-phases in the P(VDF-TrFE)-PMMA films. The switching time of the P(VDF-TrFE) increases with decreasing the pulse amplitude and/or the ratio of ferroelectric beta-phases by incorporation of PMMA. The activation electric field is also found to increase as the increase in blended amount of PMMA. Synapse TFTs are fabricated using the P(VDF-TrFE)-PMMA as gate insulator and In-Ga-Zn-O active channels. The drain currents of the synapse TFTs gradually increased when the voltage pulse signals with given duration are repeatedly applied. This suggests that the synaptic weights can be modulated by the number of external pulse signals, and that the proposed synapse TFT can be applied for mimicking the operations of bio-synapses.

  12. Structural, dielectric, ferroelectric, and electrocaloric properties of 2% Gd2O3 doping (Na0.5Bi0.5)0.94Ba0.06TiO3 ceramics

    NASA Astrophysics Data System (ADS)

    Turki, O.; Slimani, A.; Seveyrat, L.; Sebald, G.; Perrin, V.; Sassi, Z.; Khemakhem, H.; Lebrun, L.

    2016-08-01

    Structural, dielectric, and ferroelectric properties, and electrocaloric effects of pure and Gd doped ( Na0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 ceramics prepared by the conventional solid-solid method have been carried out. The X-ray diffraction analysis confirms a pure perovskite structure with the coexistence of tetragonal and rhombohedra structures in both powders. The thermal and frequency dependences of the dielectric constants of both ceramics revealed relaxor behavior. The two compounds exhibited two phase transitions: ferroelectric/antiferroelectric (FE/AFE) transition followed by an antiferroelectric/paraelectric (AFE/PE) transition at higher temperatures. Remarkably, we noticed that the small amount of Gd doping (2%) highly enhanced the dielectric properties of the parent compound by about 71%. The phase diagram was as well influenced by the Gd doping, where the FE/AFE transition temperature rose from 90 in the parent compound to 115 °C in the doped one whereas the AFE/PE transition temperature was decreased from 320 to 270 °C, respectively. The direct electrocaloric measurements performed on both compounds showed that the ferroelectric/antiferroelectric phase transition was accompanied by a significant electrocaloric effect. The Gd3+ doping improved the electrocaloric properties of the parent compound, where a remarkable temperature variation of 1.4 K was obtained in the doped ceramic. The results of the direct electrocaloric measurements will be compared and discussed with those derived from the indirect method.

  13. Large strain response based on relaxor-antiferroelectric coherence in Bi0.5Na0.5TiO3-SrTiO3-(K0.5Na0.5)NbO3 solid solutions

    NASA Astrophysics Data System (ADS)

    Liu, Laijun; Shi, Danping; Knapp, Michael; Ehrenberg, Helmut; Fang, Liang; Chen, Jun

    2014-11-01

    The effect of (K0.5Na0.5)NbO3 (KNN) addition on the ferroelectric and dielectric behavior of 90Bi0.5Na0.5TiO3-10SrTiO3 (BNT-ST) lead-free piezoceramics was investigated. Polarization and strain hysteresis loops indicate that a relaxor-antiferroelectric coherence will be produced with the addition of KNN as a replacement for ST up to 5% and the destabilization of the phase coherence is accompanied by an enhancement of the bipolar strain with the increase of temperature, which is ˜0.37% (corresponding to a large signal d33* of ˜530 pm/V at 90 °C) at 5 mol. % KNN content. This strain was analyzed as derived from an electrostrictive effect at lower electric fields and a field-induced antiferroelectric-ferroelectric phase transition at higher electric fields. The large polar strain response would be of great interest for environmental friendly high-temperature actuators.

  14. Why is the electrocaloric effect so small in ferroelectrics?

    NASA Astrophysics Data System (ADS)

    Guzmán-Verri, G. G.; Littlewood, P. B.

    2016-06-01

    Ferroelectrics are attractive candidate materials for environmentally friendly solid state refrigeration free of greenhouse gases. Their thermal response upon variations of external electric fields is largest in the vicinity of their phase transitions, which may occur near room temperature. The magnitude of the effect, however, is too small for useful cooling applications even when they are driven close to dielectric breakdown. Insight from microscopic theory is therefore needed to characterize materials and provide guiding principles to search for new ones with enhanced electrocaloric performance. Here, we derive from well-known microscopic models of ferroelectricity meaningful figures of merit for a wide class of ferroelectric materials. Such figures of merit provide insight into the relation between the strength of the effect and the characteristic interactions of ferroelectrics such as dipolar forces. We find that the long range nature of these interactions results in a small effect. A strategy is proposed to make it larger by shortening the correlation lengths of fluctuations of polarization. In addition, we bring into question other widely used but empirical figures of merit and facilitate understanding of the recently observed secondary broad peak in the electrocalorics of relaxor ferroelectrics.

  15. Electrical Properties of Barium and Zirconium Modified NBT Ferroelectric Ceramics

    SciTech Connect

    Rao, K. Sambasiva; Tilak, B.; Swathi, A.; Workineh, Haileeyesus; Rajulu, K. Ch. Varada

    2011-11-22

    Recently a new wave of interest has risen on relaxor ferroelectrics with complex perovskite structure due to their wide use in fabrication of multilayer ceramic capacitors, electrostrictive actuators, and electromechanical transducers. The polycrystalline 0.93(Bi{sub 0.5}Na{sub 0.5})Ba{sub 0.07}Z{sub 0.04}T{sub 0.96}O{sub 3}(0.07BNBZT) ceramic material, which is in the vicinity of the morphotropic phase boundary (MPB) has been prepared by using high temperature solid state reaction method. The tolerance factor has been estimated and found to be 0.815. XRD analysis revealed a rhombohedral perovskite type structure. SEM micrographs showed highly dense grains with rectangular shape. The average grain size is found to be 1.51{mu}m. Dielectric studies in the material ha indicated relaxor behaviour with diffuse phase transition. High value of {epsilon}{sub m}>1958 is found at 1kHz, Tm (phase transition temperature) 335 deg. C, The diffuseness parameter was established to be 1.60 revealing the relaxor behaviour. Further, to confirm the relaxor behaviour in the material, Vogel-Fulcher (V-F) relation has been used. Estimated V-F parameters are found to be T{sub f} = 138 deg. C, E{sub a} = 0.080 eV and {nu}{sub o} = 2.32x10{sup 8} Hz. Cole-Cole analysis has shown a non-Debye type relaxation in the system. Conductivity studies in the material obeyed the Jonscher's power law in frequency range of (45Hz-5MHz) and temperature range of (35 deg. C - 600 deg. C). The electric conduction in the system may be due to hopping/mobility/ transportation of charge carriers.

  16. Investigation of reduced (Srx,Ba1-x)Nb 2O6 as a ferroelectric-based thermoelectric

    NASA Astrophysics Data System (ADS)

    Bock, Jonathan A.

    A comprehensive study of a novel type of thermoelectric - a heavily doped material from a ferroelectric base composition - is presented. Due to the low-lying optic modes and scattering of phonons at domain walls, ferroelectrics make interesting candidates for thermoelectrics. The example of (Srx,Ba1-x)Nb2O6-delta (SBN) is explored in detail due to a report of an impressive thermoelectric figure of merit in single crystals. The goal of this research is to understand the source of the large figure of merit in SBN. In attempts to do this, the electron transport mechanism, the coupling between electron transport and ferroelectricity, the phase equilibria, and the single crystalline thermoelectric properties were investigated under various reduction conditions. It was found that the electron transport properties of a normal ferroelectric SBN can be well explained by activation of electrons into the conduction band from a localized impurity band. SBN can be shifted between a normal and relaxor ferroelectric by changing the Sr:Ba ratio. This property of SBN was utilized to study the effect of relaxor ferroelectricity on electron transport. Within the relaxor ferroelectric regime, a change in the activation energy for electronic conduction and an abnormal temperature dependence of the Seebeck coefficient were found. These properties are attributed to Anderson localization caused by the relaxor ferroelectricity. This is not thought to be the cause of the large thermoelectric figure of merit. The electron transport-ferroelectric coupling was also studied in oxygen deficient (Bax,Sr1-x)TiO3-delta (BST). A metallic-like to nonmetallic transition occurs at the ferroelectric transition, and the temperature of the metallic-like to nonmetallic transition can be shifted via Sr doping. The temperature shift on Sr doping is equivalent to the shift in the paraelectric ferroelectric transition temperature in unreduced samples, showing that the ferroelectric transition is the cause of

  17. A high energy density relaxor antiferroelectric pulsed capacitor dielectric

    SciTech Connect

    Jo, Hwan Ryul; Lynch, Christopher S.

    2016-01-14

    Pulsed capacitors require high energy density and low loss, properties that can be realized through selection of composition. Ceramic (Pb{sub 0.88}La{sub 0.08})(Zr{sub 0.91}Ti{sub 0.09})O{sub 3} was found to be an ideal candidate. La{sup 3+} doping and excess PbO were used to produce relaxor antiferroelectric behavior with slim and slanted hysteresis loops to reduce the dielectric hysteresis loss, to increase the dielectric strength, and to increase the discharge energy density. The discharge energy density of this composition was found to be 3.04 J/cm{sup 3} with applied electric field of 170 kV/cm, and the energy efficiency, defined as the ratio of the discharge energy density to the charging energy density, was 0.920. This high efficiency reduces the heat generated under cyclic loading and improves the reliability. The properties were observed to degrade some with temperature increase above 80 °C. Repeated electric field cycles up to 10 000 cycles were applied to the specimen with no observed performance degradation.

  18. Relaxor in KF-doped BaTi{sub 2}O{sub 5} ceramics by spark plasma sintering

    SciTech Connect

    Xu Jun; Akishige, Yukikuni

    2008-02-04

    Dense BaTi{sub 2}O{sub 5} ceramics with KF doping up to 5 at. % were synthesized by spark plasma sintering (SPS). The SPS method enabled us to overcome the densifying difficulty in conventional sintering which is caused by the limit of the decomposing temperature of this metastable phase. We observed drastic KF-doping effect on the ferroelectric (FE) properties of BaTi{sub 2}O{sub 5}. Although there is only very small change in lattice parameters upon KF doping, the peak temperature in dielectric constant strongly decreases in an exponential way. The diffuseness of phase transition increases and FE relaxor state sets in for KF content as low as 1 at. %. Possible structural reasons for the effect and the implication for the nature of FE phase transition in BaTi{sub 2}O{sub 5} are discussed.

  19. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    DOE PAGES

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; ...

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through chargemore » injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.« less

  20. Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy

    SciTech Connect

    Balke, Nina; Maksymovych, Petro; Jesse, Stephen; Herklotz, Andreas; Tselev, Alexander; Eom, Chang-Beom; Kravchenko, Ivan I.; Yu, Pu; Kalinin, Sergei V.

    2015-06-02

    Ferroelectricity in functional materials remains one of the most fascinating areas of modern science in the past several decades. In the last several years, the rapid development of piezoresponse force microscopy (PFM) and spectroscopy revealed the presence of electromechanical hysteresis loops and bias-induced remnant polar states in a broad variety of materials including many inorganic oxides, polymers, and biosystems. In many cases, this behavior was interpreted as the ample evidence for ferroelectric nature of the system. Here, we systematically analyze PFM responses on ferroelectric and nonferroelectric materials and demonstrate that mechanisms unrelated to ferroelectricity can induce ferroelectric-like characteristics through charge injection and electrostatic forces on the tip. In this paper, we will focus on similarities and differences in various PFM measurement characteristics to provide an experimental guideline to differentiate between ferroelectric material properties and charge injection. In conclusion, we apply the developed measurement protocols to an unknown ferroelectric material.

  1. Enhanced electrocaloric cooling in ferroelectric single crystals by electric field reversal

    NASA Astrophysics Data System (ADS)

    Ma, Yang-Bin; Novak, Nikola; Koruza, Jurij; Yang, Tongqing; Albe, Karsten; Xu, Bai-Xiang

    2016-09-01

    An improved thermodynamic cycle is validated in ferroelectric single crystals, where the cooling effect of an electrocaloric refrigerant is enhanced by applying a reversed electric field. In contrast to the conventional adiabatic heating or cooling by on-off cycles of the external electric field, applying a reversed field is significantly improving the cooling efficiency, since the variation in configurational entropy is increased. By comparing results from computer simulations using Monte Carlo algorithms and experiments using direct electrocaloric measurements, we show that the electrocaloric cooling efficiency can be enhanced by more than 20% in standard ferroelectrics and also relaxor ferroelectrics, like Pb (Mg1 /3 /Nb2 /3)0.71Ti0.29O3 .

  2. Modeling relaxor characteristics in systems of interacting dipoles

    NASA Astrophysics Data System (ADS)

    Kliem, Herbert; Leschhorn, Andreas

    2016-12-01

    We present a model which derives typical relaxor characteristics from simple and plausible microscopic assumptions. The model is based on charges which fluctuate thermally activated in double well potentials. The double well potentials are asymmetric due to disorder in the system. The electrostatic interaction between the charges is considered via a mean field approach. This model yields the typical relaxor features: we find high susceptibilities in a broad temperature range with dynamics following the Vogel-Fulcher law. In the framework of the model no spontaneous polarization arises at cooling without strong external field in accordance to experimental findings for relaxors. Furthermore the model yields hysteresis loops which depend on the amplitude of the external field and which become more and more thin and deformed above the maximum temperature of the susceptibility.

  3. Ferroelectric ultrathin perovskite films

    DOEpatents

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  4. Structural and relaxor-like dielectric properties of unfilled tungsten bronzes Ba5-5xSm5xTi5xNb10-5xO30

    NASA Astrophysics Data System (ADS)

    Wei, T.; Dong, Z.; Zhao, C. Z.; Guo, Y. Y.; Zhou, Q. J.; Li, Z. P.

    2016-03-01

    New unfilled tetragonal tungsten bronze (TTB) oxides, Ba5-5xSm5xTi5xNb10-5xO30 (BSTN-x), where 0.10 ≤ x ≤ 0.35, have been synthesized in this work. Their crystal structure was determined and analyzed based on Rietveld structural refinement. It is found that single TTB phase can be formed in a particular x range (i.e., 0.15 ≤ x ≤ 0.3) due to the competition interaction between tolerance factor and electronegativity difference. Furthermore, dielectric and ferroelectric results indicate that phase transitions and ferroelectric states are sensitive to x. Referring to the local chemistry, we suggest that the raise of vacancies at the A2-site compared with that of A1-site will intensely depress the normal ferroelectric phase and is in favor of relaxor ferroelectric state. Macroscopically, previous A-site size difference standpoint on fill TTB compounds cannot give a reasonable explanation about the variation of dielectric maximum temperature (Tm) for present BSTN-x compounds. Alternatively, tetragonality (c/a) is adopted which can well describe the variation of Tm in whole x range. In addition, one by one correspondence between tetragonality and electrical features can be found, and the compositions involving high c/a are usually stabilized in normal ferroelectric phase. It is believed that c/a is a more appropriate parameter to illustrate the variation of ferroelectric properties for unfilled TTB system.

  5. Ferroelectric domain wall relaxation in Ba0.25Sr0.75TiO3 films displaying Curie-Weiss behavior

    NASA Astrophysics Data System (ADS)

    Boikov, Yu. A.; Khamchane, K.; Claeson, T.

    2004-10-01

    Ferroelectric films may be used in integrated circuits for high frequency and memory applications. Losses and interfaces between films and electrodes are problematic. This work concerns the temperature and electric field response of the complex dielectric permittivity and the relaxation of domain walls in a ferroelectric layer that is of sufficient quality to show a Curie-Weiss behavior. Laser ablation was used to deposit 1200 nm thick Ba0.25Sr0.75TiO3 layers between metallic oxide, (100 nm) SrRuO3 and (120 nm) La0.67Ca0.33MnO3, films in epitaxial heterostructures. The electric field response (E ⩽80kV/cm) of the real ε' and imaginary ε″ parts of the complex permittivity of the intermediate Ba0.25Sr0.75TiO3 layer in these parallel plane film capacitors was studied at temperatures above and below the phase transition point TCurie. The latter was determined from the temperature dependence of the inverse dielectric permittivity and its value, TCurie=145K, agrees well with that of bulk single crystal. ε' of the Ba0.25Sr0.75TiO3 layer could be suppressed about 80% by a field E =80kV/cm at temperatures close to TCurieε'(T,E) and ε″(T,E) curves were used to gain insight into the relaxation dynamics of ferroelectric domain walls (DW) in the Ba0.25Sr0.75TiO3 layer. Their influence on ε' was noticed up to T =230K, well above TCurie. The most probable relaxation time τ of the DW in Ba0.25Sr0.75TiO3 follows a relation τ =τ0exp[(ϕ-β√E )/kT], where τ0=1.2×10-10sϕ=75-105meV, and β =4.7×10-24Jm1/2V-1/2.

  6. Ferroelastic Behavior in Relaxor 24Pb(In1/2Nb1/2)O3--46Pb(Mg1/3Nb2/3)O3--30PbTiO3 under Shear Stresses along [001] Direction

    NASA Astrophysics Data System (ADS)

    Yasuda, Naohiko; Hidayah, Nur; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Hlinka, Ing. Jiri; Iwata, Makoto; Terauchi, Hikaru; Ishibashi, Yoshihiro

    2013-05-01

    The ferroelastic behavior of relaxor 24Pb(In1/2Nb1/2)O3--46Pb(Mg1/3Nb2/3)O3--30PbTiO3 (PIN--PMN--PT) solid-solution single crystals was investigated under shear stresses using polarization light microscopy (PLM) and the scanning electron microscopy (SEM). Optical strain patterns along the \\{110\\}cub directions from the orthoscope images under crossed Nicol, induced by shear stresses applied along the [001]cub direction, making use of a Vickers microindenter with a square-base diagonal line oriented along the \\{100\\}cub directions of the crystal were observed on its (001)cub plate for the first time. These patterns at a diagonal position reveal a flowerlike pattern for ferroelastic transition from a square (S) lattice to a rectangular (R) lattice in a two-dimensional model system. A change in the interference color from yellow to blue through red toward the center in their flower leaves, according to the Michel--Levy birefringence chart, was observed. The patterns at the extinction position reveal starlike patterns coupled with lobes also due to orthorhombic and/or tetragonal twin domain structures. A blue shift (corresponding to addition in retardation) and a yellow shift (corresponding to subtraction in retardation) in color at each flower leaf in the [110]cub and [1\\bar{1}0]cub directions were respectively observed using a sensitive color plate. Such shifts in color correspond to oxygen octahedra being rotated in a staggered sense about the perovskite axis. The patterns appearing strongly along the \\{110\\}cub directions in spite of slip lines along the [100]cub, [010]cub, and [110]cub directions indicate the existence of a rotational preferred orientation in twin domain structures based on a pretransitional tweed domain structure due to platelets observed by SEM, leading to their superior piezoelectric properties due to large shear modes.

  7. Temperature-dependent transport and hysteretic behaviors induced by interfacial states in MoS2 field-effect transistors with lead-zirconate-titanate ferroelectric gating

    NASA Astrophysics Data System (ADS)

    Sun, Yilin; Xie, Dan; Zhang, Xiaowen; Xu, Jianlong; Li, Xinming; Li, Xian; Dai, Ruixuan; Li, Xiao; Li, Peilian; Gao, Xingsen; Zhu, Hongwei

    2017-01-01

    We report the temperature and gate-voltage-dependent electrical properties of lead-zirconate-titanate-gated MoS2 field-effect transistors (MoS2-PZT FETs) within a temperature range of 300 to 380 K. The MoS2 transistors with PZT gating exhibit large reproducible clockwise hysteresis, which is induced by the dynamic charge-trapping/de-trapping process of interfacial states between PZT films and MoS2 channels under the modulation of ferroelectric polarization of PZT films. In this way, the modulation of the gate effect on the hysteresis behavior has been achieved by activating the dynamic charge-trapping/de-trapping process in the interfacial states under different V gs . Moreover, the temperature dependence of the current in the range of 300 to 380 K indicates thermally activated hysteretic behaviors. The hysteresis in the transfer characteristics of MoS2-PZT FETs shows a simultaneous enlargement with increasing temperature, which can be attributed to the thermally sensitive dynamic trapping/de-trapping process of interfacial states.

  8. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  9. Super Stable Ferroelectrics with High Curie Point.

    PubMed

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-04-07

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie - Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C.

  10. Super Stable Ferroelectrics with High Curie Point

    PubMed Central

    Gao, Zhipeng; Lu, Chengjia; Wang, Yuhang; Yang, Sinuo; Yu, Yuying; He, Hongliang

    2016-01-01

    Ferroelectric materials are of great importance in the sensing technology due to the piezoelectric properties. Thermal depoling behavior of ferroelectrics determines the upper temperature limit of their application. So far, there is no piezoelectric material working above 800 °C available. Here, we show Nd2Ti2O7 with a perovskite-like layered structure has good resistance to thermal depoling up to 1400 °C. Its stable behavior is because the material has only 180° ferroelectric domains, complex structure change at Curie point (Tc) and their sintering temperature is below their Tc, which avoided the internal stresses produced by the unit cell volume change at Tc. The phase transition at Tc shows a first order behavior which involving the tilting and rotation of the octahedron. The Curie – Weiss temperature is calculated, which might explain why the thermal depoling starts at about 1400 °C. PMID:27053338

  11. Enhancing interfacial magnetization with a ferroelectric

    DOE PAGES

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; ...

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can bemore » greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.« less

  12. Enhancing interfacial magnetization with a ferroelectric

    NASA Astrophysics Data System (ADS)

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-01

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZ r0.2T i0.8O3/L a0.8S r0.2Mn O3(PZT /LSMO ) ] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0 μB/f .u . , a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  13. Simultaneous Stress and Field Control of Sustainable Switching of Ferroelectric Phases

    PubMed Central

    Finkel, P.; Staruch, M.; Amin, A.; Ahart, M.; Lofland, S.E.

    2015-01-01

    In ferroelectrics, manifestation of a strong electromechanical coupling is attributed to both engineered domain morphology and phase transformations. However, realization of large sustainable and reversible strains and polarization rotation has been limited by fatigue, nonlinearity and hysteresis losses. Here, we demonstrate that large strain and polarization rotation can be generated for over 40 × 106 cycles with little fatigue by realization of a reversible ferroelectric-ferroelectric phase transition in [011] cut Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) relaxor ferroelectric single crystal. Direct tuning of this effect through combination of stress and applied electric field, confirmed both macroscopically and microscopically with x-ray and Raman scattering, reveals the local symmetry while sweeping through the transition with a low applied electric field (<0.2 MV/m) under mechanical stress. The observed change in local symmetry as determined by x-ray scattering confirms a proposed polarization rotation mechanism corresponding to a transition between rhombohedral and orthorhombic phases. These results shed more light onto the nature of this reversible transformation between two ferroelectric phases and advance towards the development of a wide range of ferroic and multiferroic devices. PMID:26345729

  14. Hierarchical Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 near a Morphotropic Phase Boundary Composition Grown by Bridgman Method

    NASA Astrophysics Data System (ADS)

    Yasuda, Naohiko; Fuwa, Tomohiro; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Fujita, Kazuhiko; Iwata, Makoto; Terauchi, Hikaru; Ishibashi, Yoshihiro

    2011-09-01

    The domain structures of the lead-based relaxor ferroelectric solid solution single crystal, 24Pb(In1/2Nb1/2)O3 (PIN)-46Pb(Mg1/3Nb2/3)O3 (PMN)-30PbTiO3 (PT), near a morphotropic phase boundary (MPB) composition grown by the Bridgeman method were studied by polarized light microscopy (PLM), piezoresponse force microscopy (PFM) and scanning electron microscopy (SEM). The change in domain structures with poling from rhombohedral spindlelike domains of 3-5 µm width to orthorhombic domains of ˜20 µm width with rectangular cells with a size of 3-5 µm, characterized with an antiferroelectic double hysteresis loop in the electric field-induced strain behavior, was found. Such domain structures were microscopically identified from SEM images as small circular tetragonal defects, planar monoclinic defects such as edge and screw dislocations with Burgers vector b along <110>cub and/or <100>cub directions and their agglomerate rectangular orthorhombic defects, also characterized by PFM. Hierarchical domain structures are discussed from the viewpoints of domain structures due to defects such as edge and screw dislocations originating in the chemical order region (COR) and the piezoelectric responses and dielectric properties.

  15. Ergodic Relaxor State with High Energy Storage Performance Induced by Doping Sr0.85Bi0.1TiO3 in Bi0.5Na0.5TiO3 Ceramics

    NASA Astrophysics Data System (ADS)

    Li, Qing-Ning; Zhou, Chong-Rong; Xu, Ji-Wen; Yang, Ling; Zhang, Xin; Zeng, Wei-Dong; Yuan, Chang-Lai; Chen, Guo-Hua; Rao, Guang-Hui

    2016-10-01

    The large maximum polarization P max and low remnant polarization P r in relaxor ferroelectrics are key features for the energy storage density ( W) and energy-storage efficiency ( η) in materials selection. In this study, the ergodic relaxor (ER) state with high energy storage performance associated with low P r and large P max, induced by Sr0.85Bi0.1TiO3(SBT) addition in (1 - x)Bi0.5Na0.5TiO3- xSr0.85Bi0.1TiO3 (BNT-SBT x with x = 0.25-0.45, Bi0.5Na0.5TiO3 abbreviated as BNT) ceramics has been observed. In particular, significantly increased energy storage density ( W = 1.5 J/cm3) and energy-storage efficiency ( η = 73%) are obtained for BNT-SBT ergodic relaxor ceramics. These results suggest a new means of designing lead-free energy-storage materials.

  16. Scaling Behavior of Amplitude-Dependent Ferroelectric Hysteresis Loops in an Epitaxial PbZr0.2Ti0.8O3 Thin Film

    SciTech Connect

    Yang, Sang Mo; Jang, S. Y.; Kim, T. H.; Kim, Hun-Ho; Lee, Ho Nyung; Yoon, J. -G.

    2011-01-01

    We investigated the scaling behavior of ferroelectric (FE) hysteresis loops as a function of the applied field amplitude (E{sub 0}) in a high-quality epitaxial PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT) thin film. We observed that the areas of the polarization-electric field hysteresis loops (A) followed the scaling law A {proportional_to} E{sub 0}{sup {alpha}}, with the exponent {alpha} = 0.45 {+-} 0.01. This result is in excellent agreement with the theoretical prediction of {alpha} by the two-dimensional Ising model. In addition, we found that the coercive field (E{sub C}) showed E{sub C} {proportional_to} E{sub 0}{sup {gamma}} with the exponent {gamma} = 0.28 {+-} 0.01. We attribute this relationship to the difference in the sweep rate of the field amplitude E{sub 0}. From the obtained {gamma} value, the growth dimension of FE domains is found to be about 1.68 in our epitaxial PZT thin film.

  17. A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

    SciTech Connect

    Zhao, W.X.; Sun, B.; Liu, Y.H.; Wei, L.J.; Li, H.W.; Chen, P.

    2014-12-15

    BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

  18. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays

    PubMed Central

    Lu, S. G.; Chen, X.; Levard, T.; Diglio, P. J.; Gorny, L. J.; Rahn, C. D.; Zhang, Q. M.

    2015-01-01

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly. PMID:26079628

  19. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays

    NASA Astrophysics Data System (ADS)

    Lu, S. G.; Chen, X.; Levard, T.; Diglio, P. J.; Gorny, L. J.; Rahn, C. D.; Zhang, Q. M.

    2015-06-01

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly.

  20. Large Displacement in Relaxor Ferroelectric Terpolymer Blend Derived Actuators Using Al Electrode for Braille Displays.

    PubMed

    Lu, S G; Chen, X; Levard, T; Diglio, P J; Gorny, L J; Rahn, C D; Zhang, Q M

    2015-06-16

    Poly(vinylidene fluoride) (PVDF) based polymers are attractive for applications for artificial muscles, high energy density storage devices etc. Recently these polymers have been found great potential for being used as actuators for refreshable full-page Braille displays for visually impaired people in terms of light weight, miniaturized size, and larger displacement, compared with currently used lead zirconate titanate ceramic actuators. The applied voltages of published polymer actuators, however, cannot be reduced to meet the requirements of using city power. Here, we report the polymer actuator generating quite large displacement and blocking force at a voltage close to the city power. Our embodiments also show good self-healing performance and disuse of lead-containing material, which makes the Braille device safer, more reliable and more environment-friendly.

  1. Upper limit of the electrocaloric peak in lead-free ferroelectric relaxor ceramics

    NASA Astrophysics Data System (ADS)

    Le Goupil, Florian; Alford, Neil McN.

    2016-06-01

    The electrocaloric effect (ECE) of two compositions (x = 0.06 and 0.07) of (1 - x)(Na0.5Bi0.5)TiO3-xKNbO3 in the vicinity of the morphotropic phase boundary is studied by direct measurements. ΔTmax = 1.5 K is measured at 125 °C under 70 kV/cm for NBT-6KN while ΔTmax = 0.8 K is measured at 75 °C under 55 kV/cm for NBT-7KN. We show that the "shoulder," TS, in the dielectric permittivity, marks the upper limit of the ECE peak under high applied electric fields. These results imply that the range of temperature with high ECE can be quickly identified for a given composition, which will significantly speed up the process of materials selection for ECE cooling.

  2. Relaxor Ferroelectric Single Crystal Based Hybrid Actuator for Underwater Acoustic Noise Generation

    DTIC Science & Technology

    2002-05-01

    Undergraduate Students . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 11 Patents 131 7 List of Figures 1 Upper bound on specific...lectrostrictor Figure 1: Upper bound on specific work vs. frequency for various actuation media. SMA is shape- memory alloy; PZN-PT is single-crystal...chambers to be filled. Both chips were filled successfully on the first attempts to fill them. These results provided the needed confidence to fill and

  3. Non-resonant electromechanical energy harvesting using inter-ferroelectric phase transitions

    SciTech Connect

    Pérez Moyet, Richard; Rossetti, George A.; Stace, Joseph; Amin, Ahmed; Finkel, Peter

    2015-10-26

    Non-resonant electromechanical energy harvesting is demonstrated under low frequency excitation (<50 Hz) using [110]{sub C}-poled lead indium niobate-lead magnesium niobate-lead titanate relaxor ferroelectric single crystals with compositions near the morphotropic phase boundary. The efficiency of power generation at the stress-induced phase transition between domain-engineered rhombohedral and orthorhombic ferroelectric states is as much as four times greater than is obtained in the linear piezoelectric regime under identical measurement conditions but during loading below the coercive stress of the phase change. The phase transition mode of electromechanical transduction holds potential for non-resonant energy harvesting from low-frequency vibrations and does not require mechanical frequency up-conversion.

  4. Ferroelectric liquid crystal display

    NASA Technical Reports Server (NTRS)

    York, Paul K. (Inventor)

    1977-01-01

    A ferroelectric liquid crystal display device employs capacitance spoiling layers to minimize unneeded capacitances created by crossovers of X and Y address lines and to accurately define desired capacitances. The spoiler layers comprise low dielectric constant layers which space electrodes from the ferroelectric at crossover points where capacitance is not needed for device operation.

  5. Wireless ferroelectric resonating sensor.

    PubMed

    Viikari, Ville; Seppa, Heikki; Mattila, Tomi; Alastalo, Ari

    2010-04-01

    This paper presents a passive wireless resonating sensor that is based on a ferroelectric varactor. The sensor replies with its data at an intermodulation frequency when a reader device illuminates it at 2 closely located frequencies. The paper derives a theoretical equation for the response of such a sensor, verifies the theory by simulations, and demonstrates a temperature sensor based on a ferroelectric varactor.

  6. Poling and Depoling Effects on Dielectric Properties and Domain Structures in Relaxor 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 near a Morphotropic Phase Boundary Composition

    NASA Astrophysics Data System (ADS)

    Hidayah, Nur; Yasuda, Naohiko; Ohwa, Hidehiro; Tachi, Yoshihito; Yamashita, Yohachi; Iwata, Makoto

    2012-09-01

    The temperature dependence of the complex relative permittivity in a relaxor ferroelectric solid solution 24Pb(In1/2Nb1/2)O3-46Pb(Mg1/3Nb2/3)O3-30PbTiO3 (PIN-PMN-PT) crystal poled and depoled was measured from room temperature to 200 °C at various frequencies. The poled sample exhibits transitions from the ferroelectric (FE) phase to the relaxor (RE) phase on heating, and after that, the depoled one exhibits those from the RE phase to the glassy freezing phase on cooling. An RE-type dielectric dispersion with a weak frequency (f) dependence was observed. Such a dielectric dispersion in the RE state was found to be based on tweed domain structures observed by polarization light microscopy (PLM) and piezoelectric force microscopy (PFM) due to the competition between the antiferroelectric (AFE) and FE coupling in the RE state. The temperature dependence of complex permittivity with resonance- and relaxor-type dielectric dispersions in the poled and depoled samples was characterized by hierarchical domain structures.

  7. Flexible ferroelectric organic crystals

    PubMed Central

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-01-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity—the properties that originate from their non-centrosymmetric crystal lattice—but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals. PMID:27734829

  8. Flexible ferroelectric organic crystals

    NASA Astrophysics Data System (ADS)

    Owczarek, Magdalena; Hujsak, Karl A.; Ferris, Daniel P.; Prokofjevs, Aleksandrs; Majerz, Irena; Szklarz, Przemysław; Zhang, Huacheng; Sarjeant, Amy A.; Stern, Charlotte L.; Jakubas, Ryszard; Hong, Seungbum; Dravid, Vinayak P.; Stoddart, J. Fraser

    2016-10-01

    Flexible organic materials possessing useful electrical properties, such as ferroelectricity, are of crucial importance in the engineering of electronic devices. Up until now, however, only ferroelectric polymers have intrinsically met this flexibility requirement, leaving small-molecule organic ferroelectrics with room for improvement. Since both flexibility and ferroelectricity are rare properties on their own, combining them in one crystalline organic material is challenging. Herein, we report that trisubstituted haloimidazoles not only display ferroelectricity and piezoelectricity--the properties that originate from their non-centrosymmetric crystal lattice--but also lend their crystalline mechanical properties to fine-tuning in a controllable manner by disrupting the weak halogen bonds between the molecules. This element of control makes it possible to deliver another unique and highly desirable property, namely crystal flexibility. Moreover, the electrical properties are maintained in the flexible crystals.

  9. Investigation of diffuse phase transition in ferroelectric Pb2- x K1+ x Li x Nb5O15 (0 ≤ x ≤ 1.5) ceramics

    NASA Astrophysics Data System (ADS)

    Choukri, E.; Neqali, A.; Abkhar, Z.; Alimoussa, A.; Hajji, L.; Mezzane, D.; Belboukhari, A.; Amjoud, M.; Gagou, Y.; El Marssi, M.; Luk'yanchuk, I.

    2016-06-01

    Substitution of Pb with Li and K in the Pb2KNb5O15 phases leads to a new composition with chemical composition Pb2- x K1+ x Li x Nb5O15 which crystallizes with tetragonal tungsten bronze-type structure. Ferroelectric ceramics with different compositions were synthesized using solid-state reaction and complex dielectric permittivity measurements in these compounds were performed in a frequency and temperature range of 20 Hz-1 MHz and from 25 to 550 °C, respectively. Special attention was paid to the diffuse phase transition (DPT) that occurs close to the Curie temperature. The empirical equation proposed by Santos-Eiras for a phenomenological description of the temperature dependence of the dielectric permittivity (\\varepsilon_{{r}}^' }}) peak is used to calculate some characteristic parameters of DPT. From the results, it must be assumed that these compounds show a diffuse phase transition with non-relaxor behavior. A basic phase diagram showing the evolution of T m function of composition x is deduced from this study.

  10. Dielectric and Ferroelectric Properties of Lead Lanthanum Zirconate Titanate Thin Films for Capacitive Energy Storage

    NASA Astrophysics Data System (ADS)

    Tong, Sheng

    As the increasing requirement of alternative energy with less pollution influence and higher energy efficient, new energy source and related storage methods are hot topic nowadays. Capacitors that supply high instant power are one of the keys in this application for both economic and functional design aspects. To lower the cost and increases the volumetric efficiency and reliability, relaxor thin films are considered as one of the candidates of the next generation capacitors. The research mainly focuses on dielectric and ferroelectric properties of lead lanthanum zirconate titanate or Pb1-xLax(ZryTi1-y)O3 (PLZT, x/y/1-y) relaxor thin films deposited on silicon (Si) and nickel (Ni) substrates in a range of thickness with different bottom electrodes, e.g. Platinum (Pt) and LaNiO3 (LNO). The final fabricated PLZT film capacitors will show strong potential for the energy storage application. The method adopted is the acetic acid assisted sol-gel deposition for the PLZT thin films. The wet chemical process is cost-effective and easily to scale up for plant/industrial products. We investigated the different bottom electrode/substrate influence in structure, microstructure, phases/defects, and heat-treatment conditions to achieve the optimized PLZT thin films. Issues of basic physical size effects in the PLZT thin films were also investigated, including thickness effects in the dielectric and ferroelectric properties of the films in a wide range of temperatures, the phase transition of the thin-film relaxors, lanthanum content effect, electrode-dielectric junction, misfit strain effect, etc. Based on the results and analysis, optimum PLZT film capacitors can be determined of proper substrate/electrode/dielectric that achieves the desired dielectric properties required for different applications, especially a more cost-effective method to develop volumetrically efficient capacitors with high charge density, energy density, dielectric breakdown strength, energy storage

  11. Ferroelectric switching of elastin

    PubMed Central

    Liu, Yuanming; Cai, Hong-Ling; Zelisko, Matthew; Wang, Yunjie; Sun, Jinglan; Yan, Fei; Ma, Feiyue; Wang, Peiqi; Chen, Qian Nataly; Zheng, Hairong; Meng, Xiangjian; Sharma, Pradeep; Zhang, Yanhang; Li, Jiangyu

    2014-01-01

    Ferroelectricity has long been speculated to have important biological functions, although its very existence in biology has never been firmly established. Here, we present compelling evidence that elastin, the key ECM protein found in connective tissues, is ferroelectric, and we elucidate the molecular mechanism of its switching. Nanoscale piezoresponse force microscopy and macroscopic pyroelectric measurements both show that elastin retains ferroelectricity at 473 K, with polarization on the order of 1 μC/cm2, whereas coarse-grained molecular dynamics simulations predict similar polarization with a Curie temperature of 580 K, which is higher than most synthetic molecular ferroelectrics. The polarization of elastin is found to be intrinsic in tropoelastin at the monomer level, analogous to the unit cell level polarization in classical perovskite ferroelectrics, and it switches via thermally activated cooperative rotation of dipoles. Our study sheds light onto a long-standing question on ferroelectric switching in biology and establishes ferroelectricity as an important biophysical property of proteins. This is a critical first step toward resolving its physiological significance and pathological implications. PMID:24958890

  12. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    PubMed

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

  13. The interface between ferroelectric and 2D material for a Ferroelectric Field-Effect Transistor

    NASA Astrophysics Data System (ADS)

    Park, Nahee; Kang, Haeyong; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    We have studied electrical property of ferroelectric field-effect transistor which consists of graphene on hexagonal Boron-Nitride (h-BN) gated by a ferroelectric, PMN-PT (i.e. (1-x)Pb(Mg1/3Nb2/3) O3-xPbTiO3) single-crystal substrate. The PMN-PT was expected to have an effect on polarization field into the graphene channel and to induce a giant amount of surface charge. The hexagonal Boron-Nitride (h-BN) flake was directly exfoliated on the PMN-PT substrate for preventing graphene from directly contacting on the PMN-PT substrate. It can make us to observe the effect of the interface between ferroelectric and 2D material on the device operation. Monolayer graphene as 2D channel material, which was confirmed by Raman spectroscopy, was transferred on top of the hexagonal Boron-Nitride (h-BN) by using the conventional dry-transfer method. Here, we can demonstrate that the structure of graphene/hexagonal-BN/ferroelectric field-effect transistor makes us to clearly understand the device operation as well as the interface between ferroelectric and 2D materials by inserting h-BN between them. The phenomena such as anti-hysteresis, current saturation behavior, and hump-like increase of channel current, will be discussed by in terms of ferroelectric switching, polarization-assisted charge trapping.

  14. Flexible graphene-PZT ferroelectric nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Lee, Wonho; Kahya, Orhan; Tat Toh, Chee; Özyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm-2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  15. Ferroelectric Light Control Device

    NASA Technical Reports Server (NTRS)

    Park, Yeonjoon (Inventor); Choi, Sang H. (Inventor); King, Glen C. (Inventor); Kim, Jae-Woo (Inventor); Elliott, Jr., James R. (Inventor)

    2008-01-01

    A light control device is formed by ferroelectric material and N electrodes positioned adjacent thereto to define an N-sided regular polygonal region or circular region there between where N is a multiple of four.

  16. Effect of Tantalum on Ferroelectric Phase Transition Behavior of SrBi4Ti4O15 Sintered Discs

    NASA Astrophysics Data System (ADS)

    Madhavi, K.; Kumar, G. S.; Prasad, G.

    Tantalum modified strontium bismuth titanate ceramic discs with general formula SrBi4Ti(4-5x)Ta4xO15 with x = 0, 0.1, 0.2 and 0.3 have been prepared through solid state reaction method. The samples are poled and dielectric constant, loss and AC conductivity measurements are done in the temperature region (30-600°C). Ta5+ doping brought out interesting changes in dielectric phase transition behavior of the samples. Dielectric loss and conductivity measurements indicate the presence of charged defects. The results indicate changes in the distortion of the lattice. The distortion is calculated from the changes in the Curie temperature. AC conductivity results are understood in terms of the unoccupied sites and oxygen vacancies that are present in the samples.

  17. Enhancing interfacial magnetization with a ferroelectric

    SciTech Connect

    Meyer, Tricia L.; Herklotz, Andreas; Lauter, Valeria; Freeland, John W.; Nichols, John; Guo, Er-Jia; Lee, Shinbuhm; Ward, T. Zac; Balke, Nina; Kalinin, Sergei V.; Fitzsimmons, Michael R.; Lee, Ho Nyung

    2016-11-21

    Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface’s magnetic properties can be probed at an atomic level. In this paper, we use polarized neutron reflectometry to probe the evolution of the magnetic moment at interfaces in ferroelectric/strongly correlated oxide [PbZr0.2Ti0.8O3/La0.8Sr0.2MnO3(PZT/LSMO)] heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0μB/f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven by the ferroelectric polarization. Finally, these compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

  18. Ferroelectric Diodes with Charge Injection and Trapping

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Fan, Hua; Lu, Zengxing; Li, Peilian; Huang, Zhifeng; Tian, Guo; Yang, Lin; Yao, Junxiang; Chen, Chao; Chen, Deyang; Yan, Zhibo; Lu, Xubing; Gao, Xingsen; Liu, Jun-Ming

    2017-01-01

    Ferroelectric diodes with polarization-modulated Schottky barriers are promising for applications in resistive switching (RS) memories. However, they have not achieved satisfactory performance reliability as originally hoped. The physical origins underlying this issue have not been well studied, although they deserve much attention. Here, by means of scanning Kelvin probe microscopy we show that the electrical poling of ferroelectric diodes can cause significant charge injection and trapping besides polarization switching. We further show that the reproducibility and stability of switchable diode-type RS behavior are significantly affected by the interfacial traps. A theoretical model is then proposed to quantitatively describe the modifications of Schottky barriers by charge injection and trapping. This model is able to reproduce various types of hysteretic current-voltage characteristics as experimentally observed. It is further revealed that the charge injection and trapping can significantly modify the electroresistance ratio, RS polarity, and high- or low-resistance states initially defined by the polarization direction. Several approaches are suggested to suppress the effect of charge injection and trapping so as to realize high-performance polarization-reversal-induced RS. This study, therefore, reveals the microscopic mechanisms for the RS behavior comodulated by polarization reversal and charge trapping in ferroelectric diodes, and also provides useful suggestions for developing reliable ferroelectric RS memories.

  19. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor–ferroelectric ceramic composites

    DOE PAGES

    Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; ...

    2016-01-05

    Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. However, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. Here,more » we report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. These results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.« less

  20. Nanoscale mapping of heterogeneity of the polarization reversal in lead-free relaxor–ferroelectric ceramic composites

    SciTech Connect

    Gobeljic, D.; Shvartsman, V. V.; Belianinov, A.; Okatan, B.; Jesse, S.; Kalinin, S. V.; Groh, C.; Rödel, J.; Lupascu, D. C.

    2016-01-05

    Relaxor/ferroelectric ceramic/ceramic composites have shown to be promising in generating large electromechanical strain at moderate electric fields. However, the mechanisms of polarization and strain coupling between grains of different nature in the composites remain unclear. To rationalize the coupling mechanisms we performed advanced piezoresponse force microscopy (PFM) studies of 0.92BNT-0.06BT-0.02KNN/0.93BNT-0.07BT (ergodic/non-ergodic relaxor) composites. PFM is able to distinguish grains of different phases by characteristic domain patterns. Polarization switching has been probed locally, on a sub-grain scale. k-Means clustering analysis applied to arrays of local hysteresis loops reveals variations of polarization switching characteristics between the ergodic and non-ergodic relaxor grains. Here, we report a different set of switching parameters for grains in the composites as opposed to the pure phase samples. These results confirm ceramic/ceramic composites to be a viable approach to tailor the piezoelectric properties and optimize the macroscopic electromechanical characteristics.

  1. Ferroelectrics based absorbing layers

    NASA Astrophysics Data System (ADS)

    Hao, Jianping; Sadaune, Véronique; Burgnies, Ludovic; Lippens, Didier

    2014-07-01

    We show that ferroelectrics-based periodic structure made of BaSrTiO3 (BST) cubes, arrayed onto a metal plate with a thin dielectric spacer film exhibit a dramatic enhancement of absorbance with value close to unity. The enhancement is found around the Mie magnetic resonance of the Ferroelectrics cubes with the backside metal layer stopping any transmitted waves. It also involves quasi-perfect impedance matching resulting in reflection suppression via simultaneous magnetic and electrical activities. In addition, it was shown numerically the existence of a periodicity optimum, which is explained from surface waves analysis along with trade-off between the resonance damping and the intrinsic loss of ferroelectrics cubes. An experimental verification in a hollow waveguide configuration with a good comparison with full-wave numerical modelling is at last reported by measuring the scattering parameters of single and dual BST cubes schemes pointing out coupling effects for densely packed structures.

  2. Applications of modern ferroelectrics.

    PubMed

    Scott, J F

    2007-02-16

    Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips have made inroads into the semiconductor industry. Recent prototype applications include ultrafast switching, cheap room-temperature magnetic-field detectors, piezoelectric nanotubes for microfluidic systems, electrocaloric coolers for computers, phased-array radar, and three-dimensional trenched capacitors for dynamic random access memories. Terabit-per-square-inch ferroelectric arrays of lead zirconate titanate have been reported on Pt nanowire interconnects and nanorings with 5-nanometer diameters. Finally, electron emission from ferroelectrics yields cheap, high-power microwave devices and miniature x-ray and neutron sources.

  3. Study of the structure and ferroelectric behavior of BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} ceramics

    SciTech Connect

    Khokhar, Anita Sreenivas, K.; Goyal, Parveen K.; Thakur, O. P.

    2015-06-24

    The structure and ferroelectric properties of Lanthanum substituted barium bismuth titanate BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} (0 ≤ x ≤ 0.5) ceramics prepared by solid-state reaction method have been investigated. X-ray diffraction (XRD) confirms the formation of a single phase material. The distribution of lanthanum into the perovskite layers and (Bi{sub 2}O{sub 2}){sup 2+} layers of BaBi{sub 4}Ti{sub 4}O{sub 15} ceramics have been revealed through Raman spectroscopy. At lower value of x, it is seen that La{sup 3+} ions prefer to substitute A-site Bi{sup 3+} ions in the perovskite layers while for higher x values, La{sup 3+} ions get incorporated into the (Bi{sub 2}O{sub 2}){sup 2+} layers. A critical La content of x ∼ 0.2 in BaBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} is seen to exhibit a large remnant polarization (P{sub r}) with low coercive field (E{sub c}). The improvement in the ferroelectric properties of La substituted BaBi{sub 4}Ti{sub 4}O{sub 15} ceramics has been explained in terms of changing oxygen vacancy concentration and structural relaxation. Tunable ferroelectric materials can be obtained by manipulating the doping amount of lanthanum ion.

  4. Towards multicaloric effect with ferroelectrics

    NASA Astrophysics Data System (ADS)

    Liu, Yang; Zhang, Guangzu; Li, Qi; Bellaiche, Laurent; Scott, James F.; Dkhil, Brahim; Wang, Qing

    2016-12-01

    Utilizing thermal changes in solid-state materials strategically offers caloric-based alternatives to replace current vapor-compression technology. To make full use of multiple forms of the entropy and achieve higher efficiency for designs of cooling devices, the multicaloric effect appears as a cutting-edge concept encouraging researchers to search for multicaloric materials with outstanding caloric properties. Here we report the multicaloric effect in BaTi O3 single crystals driven simultaneously by mechanical and electric fields and described via a thermodynamic phenomenological model. It is found that the multicaloric behavior is mainly dominated by the mechanical field rather than the electric field, since the paraelectric-to-ferroelectric transition is more sensitive to mechanical field than to electric field. The use of uniaxial stress competes favorably with pressure due to its much higher caloric strength and negligible elastic thermal change. It is revealed that multicaloric response can be significantly larger than just the sum of mechanocaloric and electrocaloric effects in temperature regions far above the Curie temperature but cannot exceed this limit near the Curie temperature. Our results also show the advantage of the multicaloric effect over the mechanically mediated electrocaloric effect or electrically mediated mechanocaloric effect. Our findings therefore highlight the importance of ferroelectric materials to develop multicaloric cooling.

  5. Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current

    NASA Astrophysics Data System (ADS)

    Strikha, Maksym V.; Morozovska, Anna N.

    2016-12-01

    Here, we present the theory of the conductivity of a pn junction (pnJ) in a graphene channel, placed on a ferroelectric substrate, caused by the ferroelectric domain wall for the case of the arbitrary current regime: from ballistic to diffusive one. We calculated the ratio of the pnJ conductions for opposite polarities of voltages, applied to source and drain electrodes of the channel, G+to t a l /G-to t a l , as a function of graphene channel length L, electron mean free path λ, and ferroelectric substrate permittivity ɛ33f . We have demonstrated that the small values of G+to t a l /G-to t a l (0.1 and smaller), which correspond to the efficient graphene pnJ based rectifier, can be obtained for the ferroelectrics with high ɛ33f≫100 and for the ratios of L/λ ˜ 1 or smaller. However, for ferroelectrics with extremely high ɛ33f (relaxor or PbZrxTi1-xO3 with the composition x near the morphotropic phase boundary x = 0.52), the ratio G+to t a l /G-to t a l can be essentially smaller than unity for the case of a pronounced diffusive regime of current as well. This makes the ferroelectric substrates with high permittivity excellent candidates for the fabrication of new generation of rectifiers based on the graphene pnJ. The temperature effect on the G+to t a l /G-to t a l ratio was studied within the Landau-Ginzburg-Devonshire approach. We have demonstrated that the rectifying properties of the graphene pnJ become better in the vicinity of Curie temperature. However, for the temperatures higher than the Curie temperature, the rectifying effect vanishes due to the ferroelectric polarization disappearance.

  6. Enhanced dielectric, ferroelectric, and electrostrictive properties of Pb(Mg1/3Nb2/3)0.9Ti0.1O3 ceramics by ZnO modification

    NASA Astrophysics Data System (ADS)

    Promsawat, Methee; Watcharapasorn, Anucha; Tailor, Hamel N.; Jiansirisomboon, Sukanda; Ye, Zuo-Guang

    2013-05-01

    The effects of ZnO modification on the dielectric, ferroelectric, and electrostrictive properties of 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 (PMNT) ceramics are systematically studied in this work. The PMNT/xZnO (with x = 0, 0.4, 2.0, 4.0, and 11.0 mol. %) ceramics of complex perovskite structure were prepared by solid state reaction and sintering process. It is found that the maximum value of the dielectric constant decreases with increasing ZnO amount up to x = 4.0 mol. %, and then significantly increases with x = 11.0 mol. %. The temperature of maximum dielectric constant tends to increase, while the diffuseness of the dielectric peak is reduced, with increasing ZnO content. The remanent polarization and the coercive field increase with increasing ZnO concentration. The induced strain and the electrostrictive coefficient reach the maximum values of 0.10% (at E = 10 kV/cm) and 12.94 × 10-16 m2/V2, respectively, with x = 2.0 mol. % ZnO. The ceramic doped with a high ZnO content (11.0 mol. %) exhibits a macroscopically polar phase with a well-developed ferroelectric hysteresis loop and butterfly-shaped bipolar piezoelectric response. This enhanced long-range polarization and the resulting properties are attributed to the effects of the partial substitution of Zn2+ for Mg2+, which favors a higher degree of polar order and a lower degree of relaxor behavior.

  7. Characterization of Pb(In(12)Nb(12))O(3)-Pb(Mg(13)Nb(23))O(3)-PbTiO(3) ferroelectric crystal with enhanced phase transition temperatures.

    PubMed

    Zhang, Shujun; Luo, Jun; Hackenberger, Wesley; Shrout, Thomas R

    2008-09-15

    The full set of material constants for relaxor-based ternary single crystals Pb(In(12)Nb(12))O(3)-Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PIN-PMN-PT) were determined and compared to binary Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PMNT) crystals. The Curie temperature for rhombohedral compositions of PIN-PMN-PT was found to be in the range of 160-200 degrees C with ferroelectric rhombohedral to tetragonal phase transition on the order of 120-130 degrees C, more than 30 degrees C higher than that found for PMNT. The piezoelectric coefficients (d(33)) were in the range of 1100-1500 pCN, with electromechanical coupling factors (k(33)) about 89%-92% comparable to PMNT crystals. The coercive field of the ternary crystal was found to be 5.5 kVcm, double the value of the binary counterparts. The dielectric behavior under varying dc bias exhibited a similar trend as observed in PMNT with a much broader usage temperature range. Together with its enhanced field induced phase transition level, the ternary PIN-PMN-PT crystals are promising candidates for high temperature and high drive transducer applications.

  8. Possible ferrimagnetism and ferroelectricity of half-substituted rare-earth titanate: A first-principles study on Y0.5La0.5TiO3

    NASA Astrophysics Data System (ADS)

    An, Ming; Zhang, Hui-Min; Weng, Ya-Kui; Zhang, Yang; Dong, Shuai

    2016-04-01

    Titanates with the perovskite structure, including ferroelectrics (e.g., BaTiO3) and ferromagnetic ones (e.g., YTiO3), are important functional materials. Recent theoretical studies predicted multiferroic states in strained EuTiO3 and titanate superlattices, the former of which has already been experimental confirmed. Here, a first-principles calculation is performed to investigate the structural, magnetic, and electronic properties of Y half-substituted LaTiO3. Our results reveal that the magnetism of Y0.5La0.5TiO3 sensitively depends on its structural details because of the inherent phase competition. The lowest energy state is the ferromagnetic state, resulting in 0.25 μ B /Ti. Furthermore, some configurations of Y0.5La0.5TiO3 exhibit hybrid improper polarizations, which can be significantly affected by magnetism, resulting in the multiferroic properties. Because of the quenching disorder of substitution, the real Y0.5La0.5TiO3 material with random A-site ions may exhibit interesting relaxor behaviors.

  9. Ferroelectric glass of spheroidal dipoles with impurities: polar nanoregions, response to applied electric field, and ergodicity breakdown

    NASA Astrophysics Data System (ADS)

    Takae, Kyohei; Onuki, Akira

    2017-04-01

    Using molecular dynamics simulation, we study dipolar glass in crystals composed of slightly spheroidal, polar particles and spherical, apolar impurities between metal walls. We present physical pictures of ferroelectric glass, which have been observed in relaxors, mixed crystals (such as KCN x KBr1‑x ), and polymers. Our systems undergo a diffuse transition in a wide temperature range, where we visualize polar nanoregions (PNRs) surrounded by impurities. In our simulation, the impurities form clusters and their space distribution is heterogeneous. The polarization fluctuations are enhanced at relatively high T depending on the size of the dipole moment. They then form frozen PNRs as T is further lowered into the nonergodic regime. As a result, the dielectric permittivity exhibits the characteristic features of relaxor ferroelectrics. We also examine nonlinear response to cyclic applied electric field and nonergodic response to cyclic temperature changes (ZFC/FC), where the polarization and the strain change collectively and heterogeneously. We also study antiferroelectric glass arising from molecular shape asymmetry. We use an Ewald scheme of calculating the dipolar interaction in applied electric field.

  10. Relaxation Dynamics of Ferroelectric Liquid Crystals in Pulsed Electric Field

    NASA Astrophysics Data System (ADS)

    Kudreyko, A. A.; Migranov, N. G.; Migranova, D. N.

    2016-11-01

    In this contribution we report a theoretical study of relaxation processes in surface-stabilized ferroelectric liquid crystals with spontaneous polarization. The influence of pulsed electric field on the behavior of ferroelectric liquid crystal in the SmC* phase, which is placed in a thin cell with strong anchoring of SmC* molecules with the boundary substrate, is studied. In the vicinity of the substrate interface, temporal dependence of the azimuthal motion of the director induced by electric field is obtained. The response to the external distortion of ferroelectric liquid crystal confined between two microstructured substrates is the occurrence of periodic temporal formation of solitons connected with the distortion of the director field n in the sample bulk. The interplay between microstructured substrates and director distribution of the ferroelectric SmC* phase is explained by the Frenkel-Kontorova model for a chain of atoms, but adapted for the continuum problem.

  11. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    DOEpatents

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  12. Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration

    SciTech Connect

    Yang, Fang; Zhang, Qinghua; Yang, Zhenzhong; Gu, Junxing; Liang, Yan; Li, Wentao; Wang, Weihua; Jin, Kuijuan; Gu, Lin; Guo, Jiandong

    2015-08-24

    The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.

  13. Depolarization field effect on dielectric and piezoelectric properties of particulate ferroelectric ceramic-polymer composites

    NASA Astrophysics Data System (ADS)

    Ma, Fengde D.; Wang, Yu U.

    2015-03-01

    The effects of depolarization field on the dielectric and piezoelectric properties of ferroelectric ceramic particle-filled polymer-matrix composites are investigated at the underlying domain level. Phase field modeling and simulation reveals that the macroscopic properties of the composites are dominated by depolarization field effect, which depends on the arrangement and alignment rather than the size or internal grain structure of the ferroelectric particulates. It is found that 0-3 particulate composites with random dispersion of ferroelectric particles behave essentially like linear dielectric rather than ferroelectric materials, and domain-level analysis reveals the physical mechanism for lack of domain switching or hysteresis as attributed to strong depolarization effect. Thus, without effective reduction or elimination of the depolarization field, the composites cannot benefit from the functional fillers regardless of their superior properties. In order to exhibit the desired ferroelectric behaviors, it necessitates continuous ferroelectric phase connectivity in the composites.

  14. Converse magnetoelectric effect via strain-driven magnetization reorientations in ultrathin ferromagnetic films on ferroelectric substrates

    NASA Astrophysics Data System (ADS)

    Pertsev, N. A.

    2015-07-01

    A phenomenological theory is developed for the strain-driven magnetization reorientations occurring in ultrathin ferromagnetic films coupled to ferroelectric substrates experiencing electric-field-induced piezoelectric deformations. The theory takes into account the surface/interface magnetic anisotropy playing an important role in the energetics of such films and first describes the thickness-driven spin reorientation transitions emerging in the presence of substrate-induced lattice strains. Then the threshold and critical intensities of the electric field created in a ferroelectric substrate are calculated, at which different magnetic states acquire the same energy or become unstable in a strained ferromagnetic overlayer. To demonstrate stability ranges of various possible magnetization orientations, we introduce magnetoelectric orientational diagrams, where the electric-field intensity and film thickness are employed as two variables. Such diagrams are constructed for ultrathin Ni, Fe, and F e60C o40 films coupled to single crystals of classical and relaxor ferroelectrics. The inspection of these diagrams shows that the use of multiferroic hybrids comprising ultrathin ferromagnetic films significantly enlarges the range of ferroic materials suitable for experimental observations of the strain-mediated converse magnetoelectric effect.

  15. Cryogenic temperature relaxor-like dielectric responses and magnetodielectric coupling in Aurivillius Bi5Ti3FeO15 multiferroic thin films

    NASA Astrophysics Data System (ADS)

    Bai, Wei; Yin, Wenhao; Yang, Jing; Tang, Kai; Zhang, Yuanyuan; Lin, Tie; Meng, Xiangjian; Duan, Chun-Gang; Tang, Xiaodong; Chu, Junhao

    2014-08-01

    Dielectric responses and magnetodielectric (MD) behavior of Aurivillius Bi5Ti3FeO15 multiferroics were systemically studied at cryogenic temperatures. Dielectric anomaly at ˜145 K was found by the temperature dependent dielectric spectroscopy, and relaxor-like relaxation dynamics was further confirmed unambiguously. Besides the two abnormal MD transitions at about 98 K and 220 K, remarkable MD couplings were observed near relaxation peak over the whole frequency range of 102-106 Hz. Finally, the possible mechanisms of the relaxation and MD properties were discussed in association with the occurrence of local Fe-O nano-clusters because of the antisite disorder defects in Aurivillius multiferroic phases.

  16. Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

    SciTech Connect

    Ou, Xin; Xu, Bo Yin, Qiaonan; Xia, Yidong; Yin, Jiang; Liu, Zhiguo; Gong, Changjie; Lan, Xuexin

    2014-05-15

    In this work, we fabricate BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO{sub 3} substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10{sup 2} in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

  17. Molecular ferroelectrics: where electronics meet biology

    PubMed Central

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-01-01

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by overview on the fundamentals of ferroelectricity. Latest development in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also noted. PMID:24018952

  18. Molecular ferroelectrics: where electronics meet biology.

    PubMed

    Li, Jiangyu; Liu, Yuanming; Zhang, Yanhang; Cai, Hong-Ling; Xiong, Ren-Gen

    2013-12-28

    In the last several years, we have witnessed significant advances in molecular ferroelectrics, with the ferroelectric properties of molecular crystals approaching those of barium titanate. In addition, ferroelectricity has been observed in biological systems, filling an important missing link in bioelectric phenomena. In this perspective, we will present short historical notes on ferroelectrics, followed by an overview of the fundamentals of ferroelectricity. The latest developments in molecular ferroelectrics and biological ferroelectricity will then be highlighted, and their implications and potential applications will be discussed. We close by noting molecular ferroelectric as an exciting frontier between electronics and biology, and a number of challenges ahead are also described.

  19. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  20. Classical ferroelectriclike behavior of highly ordered Pb (S c1 /2N b1 /2)O3 studied by dielectric and Brillouin scattering spectroscopy

    NASA Astrophysics Data System (ADS)

    Sivasubramanian, V.; Subramanian, V.; Kojima, S.

    2016-02-01

    The ferroelectric phase transition behavior in the highly ordered Pb (S c1 /2N b1 /2) O3 has been investigated by the dielectric and Brillouin spectroscopy. The dielectric permittivity ɛr exhibits a sharp maximum without any frequency dispersion at its Curie temperature Tc. In the temperature range far above Tc, it was noted that the dielectric permittivity exhibits a noticeable deviation from the Curie-Weiss law below the characteristic intermediate temperature T*=500 K , which is common to most of the Pb-based oxide perovskite relaxors. Upon cooling, the frequency of the longitudinal acoustic phonon mode exhibits a remarkable softening towards Tc. The relaxation time of the order parameter calculated using the Landau-Khalatnikov approach was determined to be more than one order of magnitude lower than that of the disordered Pb (S c1 /2N b1 /2)O3 and is very close to that observed in the paraelectric phase of the classical ferroelectric, BaTi O3 . The observed dielectric and relaxation features are qualitatively discussed in terms of the difference in the strength of the random electric fields.

  1. Giant Electrocaloric Effect in Ferroelectrics with Tailored Polaw-Nanostructures

    SciTech Connect

    Zhang, Qiming

    2015-06-24

    Electrocaloric effect (ECE) is the temperature and/or entropy change in a dielectric material caused by an electric field induced polarization change. Although ECE has been studied since 1930s, the very small ECE observed in earlier studies in bulk materials before 2007 makes it not attractive for practical cooling applications. The objectives of this DOE program are to carry out a systematical scientific research on the entropy change and ECE in polar-dielectrics, especially ferroelectrics based on several fundamental hypotheses and to search for answers on a few scientific questions. Especially, this research program developed a series of polar-dielectric materials with controlled nano- and meso-structures and carried out studies on how these structures affect the polar-ordering, correlations, energy landscapes, and consequently the entropy states at different phases and ECE. The key hypotheses of the program include: (i) Whether a large ECE can be obtained near the ferroelectric-paraelectric (FE-PE) transition in properly designed ferroelectrics which possess large polarization P and large ß (the coefficient in the thermodynamic Landau theory where the Gibbs free energy G = G = G0+ ½ a P2 +1/4 b P4 + 1/6 c P6 – EP, and a = ß (T-Tc), where b,c,ß and Tc are constants)? (ii) What determines/determine ß? Whether a ferroelectric material with built-in disorders, which disrupt the polar-correlations and enabling a large number of local polar-states, such as a properly designed ferroelectric relaxor, can achieve a large ECE? (iii) How to design a ferroelectric material which has flat energy landscape so that the energy barriers for switching among different phases are vanishingly small? What are the necessary conditions to maximize the number of coexisting phases? (iv) How to design ferroelectric materials with a large tunable dielectric response? That is, at zero electric field, the material possesses very

  2. Raman spectroscopy evidence of domain walls in the organic electronic ferroelectrics (TMTTF) 2X (X =Sb F6,As F6,P F6 )

    NASA Astrophysics Data System (ADS)

    Świetlik, Roman; Barszcz, Bolesław; Pustogow, Andrej; Dressel, Martin

    2017-02-01

    Charge ordering in the quasi-one-dimensional organic conductors (TMTTF) 2X (X =Sb F6,As F6,P F6 ) was studied by using Raman spectroscopy. In the charge-ordered phase three vibrational features related to the ring breathing mode ν10(ag) of neutral (TMTT F0 ) and ionized (TMTT F+0.5 and TMTT F+1 ) are observed at about 503, 507, and 526 c m-1 , respectively. The bands of donor molecules with charge +0.5 e are assigned to ferroelectric domains while the bands of neutral and fully ionized molecules to domain walls. The shape of the band at about 526 c m-1 , attributed to the charged domain walls (molecules with charge +1 e ), reveals important differences between salts, i.e., indicates the presence of relaxor ferroelectricity which is well seen in (TMTTF) 2P F6 .

  3. Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

    SciTech Connect

    Elena Ciomaga, Cristina; Maria Neagu, Alexandra; Valentin Pop, Mihai; Mitoseriu, Liliana; Airimioaei, Mirela; Tascu, Sorin; Schileo, Giorgio; Galassi, Carmen

    2013-02-21

    Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

  4. Conduction at a ferroelectric interface

    SciTech Connect

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; Han, Myung -Geun; Chen, Hanghui; Zhu, Yimei; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.

  5. Conduction at a ferroelectric interface

    DOE PAGES

    Marshall, Matthew S. J.; Malashevich, Andrei; Disa, Ankit S.; ...

    2014-11-05

    Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, inmore » one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.« less

  6. Photovoltaic effect in Ferroelectric Materials

    NASA Astrophysics Data System (ADS)

    Katiyar, Rajesh K.; Panwar, Neeraj; Morell, G.; Katiyar, Ram S.

    2010-03-01

    Photovoltaic effect in ferroelectric materials is of much interest due to the anomalously large open circuit photovoltages when illuminated. It is concluded that this unprecedented high value of photovoltaic effect is due to the presence of non-centrosymmetry in the ferroelectric materials which gives rise to electron excitation, relaxation, and scattering processes. The photovoltaic efficiencies are, however, limited due to small current densities and the large band gap values of the ferroelectric materials. We have synthesized thin films of BiFeO3 (a low band gap material ˜2.67eV) and ferroelectric material SrBi2Ta2O9(SBT) on silicon substrates with ITO as the bottom electrode. The band gap of the SBT has been decreased by incorporating metallic particles Ag, Pt. in the ferroelectric matrix. The results will be presented.

  7. SOFT MODE ANOMALIES IN THE PEROVSKITE RELAXOR Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}

    SciTech Connect

    GEHRING,P.M.; VAKRUSHEV,S.B.; SHIRANE,G.

    2000-03-09

    Neutron inelastic scattering measurements of the polar TO phonon mode in the cubic relaxor Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, at room temperature, reveal anomalous behavior similar to that recently observed in Pb(Zn{sub 1/3}Nb{sub 2/3}){sub 0.92}Ti{sub 0.08}O{sub 3} in which the optic branch appears to drop precipitously into the acoustic branch at a finite value of the momentum transfer q = 0.2 {angstrom}{sub {minus}1}, measured from the zone center. By contrast, a recent neutron study indicates that PMN exhibits a normal TO phonon dispersion at 800 K. The authors speculate this behavior is common to all relaxor materials, and is the result of the presence of nanometer-scale polarized domains in the crystal that form below a temperature T{sub d}, which effectively prevent the propagation of long wavelength (q = 0) phonons.

  8. Ferroelectric optical image comparator

    DOEpatents

    Butler, M.A.; Land, C.E.; Martin, S.J.; Pfeifer, K.B.

    1993-11-30

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image. 7 figures.

  9. Ferroelectric optical image comparator

    DOEpatents

    Butler, Michael A.; Land, Cecil E.; Martin, Stephen J.; Pfeifer, Kent B.

    1993-01-01

    A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

  10. Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion

    NASA Astrophysics Data System (ADS)

    Lopez-Varo, Pilar; Bertoluzzi, Luca; Bisquert, Juan; Alexe, Marin; Coll, Mariona; Huang, Jinsong; Jimenez-Tejada, Juan Antonio; Kirchartz, Thomas; Nechache, Riad; Rosei, Federico; Yuan, Yongbo

    2016-10-01

    Solar energy conversion using semiconductors to fabricate photovoltaic devices relies on efficient light absorption, charge separation of electron-hole pair carriers or excitons, and fast transport and charge extraction to counter recombination processes. Ferroelectric materials are able to host a permanent electrical polarization which provides control over electrical field distribution in bulk and interfacial regions. In this review, we provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far. In a ferroelectric semiconductor film with ideal contacts, the polarization charge would be totally screened by the metal layers and no charge collection field would exist. However, real materials show a depolarization field, smooth termination of polarization, and interfacial energy barriers that do provide the control of interface and bulk electric field by switchable spontaneous polarization. We explore different phenomena as the polarization-modulated Schottky-like barriers at metal/ferroelectric interfaces, depolarization fields, vacancy migration, and the switchable rectifying behavior of ferroelectric thin films. Using a basic physical model of a solar cell, our analysis provides a general picture of the influence of ferroelectric effects on the actual power conversion efficiency of the solar cell device, and we are able to assess whether these effects or their combinations are beneficial or counterproductive. We describe in detail the bulk photovoltaic effect and the contact layers that modify the built-in field and the charge injection and separation in bulk heterojunction organic cells as well as in photocatalytic and water splitting devices. We also review the dominant families of ferroelectric materials that have been most extensively investigated and have provided the best photovoltaic performance.

  11. Field dependent elastic anomaly in uniaxial tungsten bronze relaxors

    NASA Astrophysics Data System (ADS)

    Aftabuzzaman, Md; Dec, Jan; Kleemann, Wolfgang; Kojima, Seiji

    2016-10-01

    The electric field effects on the elastic properties of uniaxial Ca x Ba1- x Nb2O6 (x = 0.30, CBN30) single crystals were investigated using broadband Brillouin scattering spectroscopy as functions of temperature and electric field. Remarkable thermal hysteresis was observed between zero field heating and zero field cooling processes. A stretching index β = 2.05 indicates the stretched critical slowing down of polar nanoregions (PNRs). The effect of electric field along [001] direction was clearly observed. Under 1.0 kV/cm field, the alignment of nanodomains and enhancement of the long-range ferroelectric order were observed in the ferroelectric phase. In the field dependent measurement, a mixed state consisting of macrodomains induced by the electric field and nanodomains caused by the random fields was observed at 3.0 kV/cm. The mixed state persists up to 13 kV/cm because of the incomplete switching of the nanodomains to the macrodomains state. A very strong memory effect was also observed.

  12. Ferroelectric Based Technologies for Accelerators

    SciTech Connect

    Kanareykin, A.; Jing, C.; Nenasheva, E.; Kazakov, S.; Tagantsev, A.; Yakovlev, V.

    2009-01-22

    Ferroelectrics have unique intrinsic properties that make them extremely attractive for high-energy accelerator applications. Low loss ferroelectric materials can be used as key elements in RF tuning and phase shifting components to provide fast, electronic control. These devices are under development for different accelerator applications for the X, Ka and L-frequency bands. The exact design of these devices depends on the electrical parameters of the particular ferroelectric material to be used--its dielectric constant, loss tangent and tunability. BST based ferroelectric-oxide compounds have been found to be suitable materials for a fast electrically-controlled tuners. We present recent results on the development of BST based ferroelectric compositions synthesized for use in high power technology components. The BST(M) ferroelectrics have been tested using both transverse and parallel dc bias fields to control the permittivity. Fast switching of a newly developed material has been shown and the feasibility of using of ferroelectric-based accelerator components in vacuum and in air has been demonstrated.

  13. Broadband light-scattering spectroscopy on fractal and non-fractal relaxors

    NASA Astrophysics Data System (ADS)

    Koreeda, Akitoshi; Ogawa, Tomohiro; Katayama, Daisuke; Fujii, Yasuhiro; Tachibana, Makoto

    2016-10-01

    We show the quasi-elastic light scattering (QELS) spectra of two groups of relaxors: the first group includes relaxors that exhibit glasslike low-temperature thermal conductivity and heat capacity, namely, Pb(Mg1/3Nb2/3)O3 (PMN), (1 - x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-xPT), Pb(Zr1/3Nb2/3)O3 (PZN), and (Na1/2Bi1/2)TiO3 (NBT). The other group consists of relaxors exhibiting a normal (crystal) temperature dependence of the thermal conductivity and heat capacity, namely, K1- x Li x TaO3 (KLT) and KTa1- x Nb x O3 (KTN). The crystals of the first group yielded self-similar (power-law) QELS spectra, indicating the existence of fractal networks/clusters of polar nanoregions, while those of the second group did not show any self-similarity in the QELS spectra. These results imply that the glasslike low-temperature thermal conductivity and heat capacity in relaxors can be attributed to the vibrational modes specific to fractal networks/clusters formed by polar nanoregions.

  14. Multigap Semiconducting ferroelectric perovskites

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Davies, Peter; Rappe, Andrew

    2013-03-01

    The energy conversion efficiency of a solar cell is directly related to the band gap of the material. By doping ferroelectric perovskites with Bi5+ on the B-site, we propose low band-gap materials suitable for bulk photovoltaic effect and related solar applications.Our DFT calculations indicate that the low-lying 6 s empty states of the electronegative Bi atom produce empty isolated bands in the gap of the parent materials, effectively lowering the band gap by 1 ~2eV in various perovskites. Ferroelectricity (and therefore inversion symmetry breaking) weakens but survives upon doping, which enables the ``shift current'' mechanism for photocurrent generation, while the decreased band gap helps absorb low energy photons in the visible range. Furthermore, the existence of multiple band gaps allows for solar conversion devices with efficiency beyond the traditional Shockly-Queisser limit, in which successive photon excitations result in carriers with higher energy than a single-step excitation would achieve.

  15. Characterization of a Common-Source Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeond, Todd C.; Ho, Pat D.

    2010-01-01

    This paper presents empirical data that was collected through experiments using a FeFET in the established common-source amplifier circuit. The unique behavior of the FeFET lends itself to interesting and useful operation in this widely used common-source amplifier. The paper examines the effect of using a ferroelectric transistor for the amplifier. It also examines the effects of varying load resistance, biasing, and input voltages on the output signal and gives several examples of the output of the amplifier for a given input. The difference between a commonsource amplifier using a ferroelectric transistor and that using a MOSFET is addressed.

  16. Examining graphene field effect sensors for ferroelectric thin film studies.

    PubMed

    Rajapitamahuni, A; Hoffman, J; Ahn, C H; Hong, X

    2013-09-11

    We examine a prototype graphene field effect sensor for the study of the dielectric constant, pyroelectric coefficient, and ferroelectric polarization of 100-300 nm epitaxial (Ba,Sr)TiO3 thin films. Ferroelectric switching induces hysteresis in the resistivity and carrier density of n-layer graphene (n = 1-5) below 100 K, which competes with an antihysteresis behavior activated by the combined effects of electric field and temperature. We also discuss how the polarization asymmetry and interface charge dynamics affect the electronic properties of graphene.

  17. Phase transitions in ferroelectric silicon doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Böscke, T. S.; Teichert, St.; Bräuhaus, D.; Müller, J.; Schröder, U.; Böttger, U.; Mikolajick, T.

    2011-09-01

    We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier.

  18. Dynamic Properties of Dielectric Susceptibility in Ferroelectric Thin Films

    NASA Astrophysics Data System (ADS)

    Cui, Lian; Cui, Haiying; Wu, Chunmei; Yang, Guihua; He, Zelong; Wang, Yuling; Che, Jixin

    2016-02-01

    In this paper, frequency, temperature, film thickness, surface effects, and various parameters dependence of dielectric susceptibility is investigated theoretically for ferroelectric thin films by the modified Landau theory under an AC applied field. The dielectric susceptibility versus AC applied field shows butterfly-shaped behavior, and depends strongly on the frequency and amplitude of the field and temperature. Our study shows that the existence of the surface transition layer can depress the dielectric susceptibility of a ferroelectric thin film. These results are well consistent with the phenomena reported in experiments.

  19. Ferroelectric tunneling under bias voltages

    NASA Astrophysics Data System (ADS)

    Ma, Z. J.; Chen, G.; Zhou, P.; Mei, Z. H.; Zhang, T. J.

    2017-01-01

    Theoretical investigations of ferroelectric tunneling in a SrRuO3/BaTiO3/Pt junction were conducted, and critical expressions for the surface charge density in the electrodes and the potential distribution across the tunnel junction were derived. It was found that the screening charges associated with the ferroelectric polarization and the charging effect of the capacitor jointly contribute to the charges in the electrodes. A current-voltage study simulating the ‘read’ operation indicated that the tunneling electroresistance effect increases with the ferroelectric thickness, and the tunneling electroresistance values agree well with experimental results.

  20. Spectroscopic signature for ferroelectric ice

    NASA Astrophysics Data System (ADS)

    Wójcik, Marek J.; Gług, Maciej; Boczar, Marek; Boda, Łukasz

    2014-09-01

    Various forms of ice exist within our galaxy. Particularly intriguing type of ice - ‘ferroelectric ice' was discovered experimentally and is stable in temperatures below 72 K. This form of ice can generate enormous electric fields and can play an important role in planetary formation. In this letter we present Car-Parrinello simulation of infrared spectra of ferroelectric ice and compare them with spectra of hexagonal ice. Librational region of the spectra can be treated as spectroscopic signature of ice XI and can be of help to identify ferroelectric ice in the Universe.

  1. Ferroelectricity in one unit-cell period oxide superlattices

    NASA Astrophysics Data System (ADS)

    Noh, T. W.; Lee, J. H.; Lee, H. N.

    2005-03-01

    We present electric properties of one unit-cell period superlattices composed of CaTiO3 (CTO), SrTiO3 (STO), and BaTiO3 (BTO) perovskites, in which the structural symmetry and lattice misfit strain can be systematically varied without changing the chemical valence states. The one unit-cell period CTO/BTO, BTO/STO, and CTO/STO superlattices were grown by high oxygen pressure pulsed laser deposition on atomically flat SrRuO3 conducting oxide grown on STO (001) substrates. CTO/BTO and BTO/STO showed ferroelectricity in room temperature, while CTO/STO showed paraelectric behavior. Such spontaneous electric polarization was an unexpected result, because all TiO6 octahedron was not in the same structural condition with ferroelectric BTO, but was sandwiched by CaO (SrO) and BaO layers in these superlattices. By performing first principle calculations, ferroelectric ground states can be found in the distorted TiO6. Moreover, the ferroelectricity was described as the collective displacement of the titanium-oxygen-titanium ions, which is different from that of bulk ferroelectric material.

  2. Theoretical Approach to Electroresistance in Ferroelectric Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Chang, Sou-Chi; Naeemi, Azad; Nikonov, Dmitri E.; Gruverman, Alexei

    2017-02-01

    In this paper, a theoretical approach comprising the nonequilibrium Green's function method for electronic transport and the Landau-Khalatnikov equation for electric polarization dynamics is presented to describe polarization-dependent tunneling electroresistance (TER) in ferroelectric tunnel junctions. Using appropriate contact, interface, and ferroelectric parameters, the measured current-voltage characteristic curves in both inorganic (Co /BaTi O3/La0.67Sr0.33 MnO3 ) and organic (Au /PVDF /W ) ferroelectric tunnel junctions can be well described by the proposed approach. Furthermore, under this theoretical framework, the controversy of opposite TER signs observed experimentally by different groups in Co /BaTi O3/La0.67Sr0.33 MnO3 systems is addressed by considering the interface termination effects using the effective contact ratio defined through the effective screening length and dielectric response at the metal-ferroelectric interfaces. Finally, our approach is extended to investigate the role of a CoOx buffer layer at the Co /BaTi O3 interface in a ferroelectric tunnel memristor. It is shown that in order to have a significant memristor behavior not only the interface oxygen vacancies but also the CoOx layer thickness may vary with the applied bias.

  3. Collective and molecular relaxation in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Wrobel, S.; Marzec, M.; Godlewska, Malgorzata; Gestblom, B.; Hiller, Steffen; Haase, Wolfgang

    1995-08-01

    Ferroelectric liquid crystals are molecular ferroelectrics showing up in the tilted liquid crystalline systems (SmC*, SmI*, SmF*) composed of chiral molecules. In this work, we present the dielectric, electro-optic, and calorimetric studies of a single component system: 3-octyloxy-6[2-fluor-4-(2-fluoroctyloxy)phenyl]-pyridine showing interesting ferroelectric properties. The compound exhibits a first order N*- SmC* phase transition which leads to a qualitatively new behavior, for instance the relaxation frequency of the soft mode below TC seems to be temperature independent. The high frequency relaxation process, connected with the reorientation around the long axis, is practically undisturbed at the N*-SmC* transition. Yet, it was found that in the SmC* phase, the best fit was obatined with two Cole-Cole functions yielding two relaxation times to describe a biased reorientation of molecules in the SmC* phase.

  4. Piezoelectric properties of rhombohedral ferroelectric materials with phase transition

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaofang; Soh, A. K.

    2015-12-01

    The temporal evolution of domain structure and its piezoelectric behavior of ferroelectric material BaTiO3 during the transition process from rhombohedral to tetragonal phase under an applied electric field have been studied by employing Landau-Ginzburg theory and the phase-field method. The results obtained show that, during the transformation process, the intermediate phase was monoclinic MA phase, and several peak values of piezoelectric coefficient appeared at the stage where obvious change of domain pattern occurred. In addition, by comparing the cases of applied electric field with different frequencies, it was found that the maximum piezoelectric coefficient obtained decreased with increasing frequency value. These results are of great significance in tuning the properties of engineering domains in ferroelectrics, and could provide more fundamentals to the design of ferroelectric devices.

  5. Nanomechanics of Ferroelectric Thin Films and Heterostructures

    SciTech Connect

    Li, Yulan; Hu, Shenyang Y.; Chen , L.Q.

    2016-08-31

    The focus of this chapter is to provide basic concepts of how external strains/stresses altering ferroelectric property of a material and how to evaluate quantitatively the effect of strains/stresses on phase stability, domain structure, and material ferroelectric properties using the phase-field method. The chapter starts from a brief introduction of ferroelectrics and the Landau-Devinshire description of ferroelectric transitions and ferroelectric phases in a homogeneous ferroelectric single crystal. Due to the fact that ferroelectric transitions involve crystal structure change and domain formation, strains and stresses can be produced inside of the material if a ferroelectric transition occurs and it is confined. These strains and stresses affect in turn the domain structure and material ferroelectric properties. Therefore, ferroelectrics and strains/stresses are coupled to each other. The ferroelectric-mechanical coupling can be used to engineer the material ferroelectric properties by designing the phase and structure. The followed section elucidates calculations of the strains/stresses and elastic energy in a thin film containing a single domain, twinned domains to complicated multidomains constrained by its underlying substrate. Furthermore, a phase field model for predicting ferroelectric stable phases and domain structure in a thin film is presented. Examples of using substrate constraint and temperature to obtain interested ferroelectric domain structures in BaTiO3 films are demonstrated b phase field simulations.

  6. Ferroelectric Thin Films for Electronic Applications

    NASA Astrophysics Data System (ADS)

    Udayakumar, K. R.

    This study yokes together the feasibility of a family of PbO-based perovskite-structured ferroelectric thin films as functional elements in nonvolatile random access memories (NVRAMs), in high capacity dynamic RAMs, and in a new class of flexure wave piezoelectric ultrasonic micromotors. The dielectric and ferroelectric properties of lead zirconate titanate (PZT) thin films were dependent on thickness; at saturation, the films were characterized by a relative permittivity of 1300, remanent polarization of 36 muC/cm^2 and breakdown strength of over 1 MV/cm. The temperature dependence of permittivity revealed an anomalous behavior with the film annealing temperature. Based on the ferroelectric properties in the bulk, thin films in the lead zirconate -lead zinc niobate (PZ-PZN) solid solution system at 8-12% PZN, examined as alternate compositions for ferroelectric memories, feature switched charges of 4-14 mu C/cm^2, with coercive and saturation voltages less than the semiconductor operating voltage of 5 V. Rapid thermally annealed lead magnesium niobate titanate films were privy to weak signal dielectric permittivity of 2900, remanent polarization of 11 muC/cm^2, and a storage density of 210 fC/mum^2 at 5 V; the films merit consideration for potential applications in ultra large scale integrated circuits as also ferroelectric nonvolatile RAMs. The high breakdown strength and relative permittivity of the PZT films entail maximum stored energy density 10^3 times larger than a silicon electrostatic motor. The longitudinal piezoelectric strain coefficient d_{33 } was measured to be 220 pC/N at a dc bias of 75 kV/cm. The transverse piezoelectric strain coefficient d_{31} bore a nonlinear relationship with the electric field; at 200 kV/cm, d _{31} was -88 pC/N. The development of the piezoelectric ultrasonic micromotors from the PZT thin films, and the architecture of the stator structures are described. Nonoptimized prototype micromotors show rotational velocities of 100

  7. Molecular Dynamics Modeling of Dielectric Polarization and Ferroelectricity in Poly(vinylidene fluoride) and Related Polymers

    NASA Astrophysics Data System (ADS)

    Calame, Jeffrey

    Molecular dynamics studies of the dielectric polarization response of a constrained bond length and bond angle, united-atom-based model of lamellar crystals of poly(vinylidene fluoride) (PVDF) are reported. Classical ferroelectricity is observed in PVDF, and when variations in the basic PVDF-like interaction parameters are allowed, a transition between classical and relaxor ferroelectricity is found to depend systematically on the polymer repeat unit dipole moment and on the united atom radius of the non-CH2 functional group. The effects of step and ramp electric field reversal are studied. A complicated sequence of reorientation processes occurs over a wide range of time scales, including a weak, temperature-independent response of 1-2 ps duration associated with local torsional motion, followed by a slow-rising delay regime lasting 10s of ns or longer that involves trans-gauche (TG) transitions in the amorphous phase. After the delay, a large-amplitude primary reorientation occurs over a relatively short additional duration (0.1 to 2 ns), which is due to rotation of large sub-segments in the crystalline phase with few TG transitions. The overall sequence concludes with a slow terminal rise lasting several 100s of ns involving an improvement in crystalline order. Work supported by the U.S. Office of Naval Research.

  8. Ferroelectric capacitor with reduced imprint

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.; Dimos, Duane B.; Pike, Gordon E.

    1997-01-01

    An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO.sub.3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

  9. Ferroelectric infrared detector and method

    DOEpatents

    Lashley, Jason Charles; Opeil, Cyril P.; Smith, James Lawrence

    2010-03-30

    An apparatus and method are provided for sensing infrared radiation. The apparatus includes a sensor element that is positioned in a magnetic field during operation to ensure a .lamda. shaped relationship between specific heat and temperature adjacent the Curie temperature of the ferroelectric material comprising the sensor element. The apparatus is operated by inducing a magnetic field on the ferroelectric material to reduce surface charge on the element during its operation.

  10. Conductivity and interfacial charge induced phenomena in ferroelectric films and composites

    NASA Astrophysics Data System (ADS)

    Wong, Chung Kwan

    2005-11-01

    Ferroelectric materials are polar dielectrics which normally possess small but finite electrical conductivity. We believe that conductivity in ferroelectrics can induce new phenomena or modify known physical phenomena, which may be difficult to understand if the materials are regarded as perfectly insulating. In this thesis, some "anomalous" phenomena are investigated for which the origins are still under debate in literature, and we suggest that these may very well be manifestations of electrical conduction and electric charges. Ferroelectric systems of interest to this investigation include composites and films. Electrical conductivity in ferroelectric composites allows free charge to accumulate at the matrix-inclusion interfaces. We focus on the role of interfacial charge at such interfaces in ferroelectric 0--3 composites (normally, ferroelectric ceramic inclusions dispersed in polymer matrices) in the interpretation of their peculiar experimental results. The effect of interfacial charge on the piezoelectric properties of ferroelectric 0--3 composites and the effect of electrical conductivity on their dielectric and piezoelectric properties are also investigated. Our previously developed model has been extended to include the additional contribution from the deformation of the inclusion particles (for discussing the effect of interfacial charge) due to the applied stresses in piezoelectric measurements, and for discussing the effect of conductivity to include its contribution as well as the frequency of measurement. Phenomena induced by electrical conductivity in other ferroelectric systems have also been studied. We consider the effects of electrical conductivity on the dynamic polarization behavior of ferroelectric films. Using a parallelogram-like P-E hysteresis model for the film material, explicit expressions are obtained for describing the D-E loops of ferroelectric films as would be measured from a Sawyer-Tower circuit which originally assumes the

  11. Micro- and nanodomain imaging in uniaxial ferroelectrics: Joint application of optical, confocal Raman, and piezoelectric force microscopy

    SciTech Connect

    Shur, V. Ya. Zelenovskiy, P. S.

    2014-08-14

    The application of the most effective methods of the domain visualization in model uniaxial ferroelectrics of lithium niobate (LN) and lithium tantalate (LT) family, and relaxor strontium-barium niobate (SBN) have been reviewed in this paper. We have demonstrated the synergetic effect of joint usage of optical, confocal Raman, and piezoelectric force microscopies which provide extracting of the unique information about formation of the micro- and nanodomain structures. The methods have been applied for investigation of various types of domain structures with increasing complexity: (1) periodical domain structure in LN and LT, (2) nanodomain structures in LN, LT, and SBN, (3) nanodomain structures in LN with modified surface layer, (4) dendrite domain structure in LN. The self-assembled appearance of quasi-regular nanodomain structures in highly non-equilibrium switching conditions has been considered.

  12. Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si.

    PubMed

    Chernikova, Anna; Kozodaev, Maksim; Markeev, Andrei; Negrov, Dmitrii; Spiridonov, Maksim; Zarubin, Sergei; Bak, Ohheum; Buragohain, Pratyush; Lu, Haidong; Suvorova, Elena; Gruverman, Alexei; Zenkevich, Andrei

    2016-03-23

    Because of their immense scalability and manufacturability potential, the HfO2-based ferroelectric films attract significant attention as strong candidates for application in ferroelectric memories and related electronic devices. Here, we report the ferroelectric behavior of ultrathin Hf0.5Zr0.5O2 films, with the thickness of just 2.5 nm, which makes them suitable for use in ferroelectric tunnel junctions, thereby further expanding the area of their practical application. Transmission electron microscopy and electron diffraction analysis of the films grown on highly doped Si substrates confirms formation of the fully crystalline non-centrosymmetric orthorhombic phase responsible for ferroelectricity in Hf0.5Zr0.5O2. Piezoresponse force microscopy and pulsed switching testing performed on the deposited top TiN electrodes provide further evidence of the ferroelectric behavior of the Hf0.5Zr0.5O2 films. The electronic band lineup at the top TiN/Hf0.5Zr0.5O2 interface and band bending at the adjacent n(+)-Si bottom layer attributed to the polarization charges in Hf0.5Zr0.5O2 have been determined using in situ X-ray photoelectron spectroscopy analysis. The obtained results represent a significant step toward the experimental implementation of Si-based ferroelectric tunnel junctions.

  13. Tuning of dielectric, pyroelectric and ferroelectric properties of 0.715Bi0.5Na0.5TiO3-0.065BaTiO3-0.22SrTiO3 ceramic by internal clamping

    NASA Astrophysics Data System (ADS)

    Patel, Satyanarayan; Chauhan, Aditya; Kundu, Swarup; Madhar, Niyaz Ahamad; Ilahi, Bouraoui; Vaish, Rahul; Varma, K. B. R.

    2015-08-01

    This study systematically investigates the phenomenon of internal clamping in ferroelectric materials through the formation of glass-ceramic composites. Lead-free 0.715Bi0.5Na0.5TiO3-0.065BaTiO3-0.22SrTiO3 (BNT-BT-ST) bulk ferroelectric ceramic was selected for the course of investigation. 3BaO - 3TiO2 - B2O3 (BTBO) glass was then incorporated systematically to create sintered samples containing 0%, 2%, 4% and 6% glass (by weight). Upon glass induction features like remnant polarization, saturation polarization, hysteresis losses and coercive field could be varied as a function of glass content. Such effects were observed to benefit derived applications like enhanced energy storage density ˜174 kJ/m3 to ˜203 kJ/m3 and pyroelectric coefficient 5.7x10-4 Cm-2K-1 to 6.8x10-4 Cm-2K-1 by incorporation of 4% glass. Additionally, BNT-BT-ST depolarization temperature decreased from 457K to 431K by addition of 4% glass content. Glass incorporation could systematically increases diffuse phase transition and relaxor behavior temperature range from 70 K to 81K and 20K to 34 K, respectively when 6% and 4% glass content is added which indicates addition of glass provides better temperature stability. The most promising feature was observed to be that of dielectric response tuning. It can be also used to control (to an extent) the dielectric behavior of the host ceramic. Dielectric permittivity and losses decreased from 1278 to 705 and 0.109 to 0.107 for 6% glass, at room temperature. However this reduction in dielectric constant and loss increases pyroelectric figures of merit (FOMs) for high voltage responsivity (Fv) high detectivity (Fd) and energy harvesting (Fe) from 0.018 to 0.037 m2C-1, 5.89 to 8.85 μPa-1/2 and 28.71 to 61.55 Jm-3K-2, respectively for 4% added ceramic-glass at room temperature. Such findings can have huge implications in the field of tailoring ferroelectric response for application specific requirements.

  14. Macroscopic ferroelectricity and piezoelectricity in nanostructured NaNbO3 ceramics

    NASA Astrophysics Data System (ADS)

    Chao, Lumen; Hou, Yudong; Zheng, Mupeng; Yue, Yunge; Zhu, Mankang

    2017-03-01

    NaNbO3 sits at an instability between its ferroelectric and antiferroelectric phases, but its nanoscale polarization behavior is rarely reported. In this work, we produced high-density NaNbO3 nanostructured ceramics with a grain size of 50 nm by spark plasma sintering of nanocrystalline powder, which was obtained by mechanosynthesis. The nanostructured ceramics exhibited a symmetrical ferroelectric loop and increased relative permittivity. We believe that the increased internal stress at the nanoscale stabilized the ferroelectric domain structure, which promoted macroscopic piezoelectricity, demonstrating its potential uses in nanoelectromechanical systems.

  15. Structures, electrical properties, and leakage current behaviors of un-doped and Mn-doped lead-free ferroelectric K{sub 0.5}Na{sub 0.5}NbO{sub 3} films

    SciTech Connect

    Wang, Lingyan E-mail: wren@mail.xjtu.edu.cn; Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Shi, Peng; Wu, Xiaoqing

    2014-01-21

    Lead-free ferroelectric un-doped and doped K{sub 0.5}Na{sub 0.5}NbO{sub 3} (KNN) films with different amounts of manganese (Mn) were prepared by a chemical solution deposition method. The thicknesses of all films are about 1.6 μm. Their phase, microstructure, leakage current behavior, and electrical properties were investigated. With increasing the amounts of Mn, the crystallinity became worse. Fortunately, the electrical properties were improved due to the decreased leakage current density after Mn-doping. The study on leakage behaviors shows that the dominant conduction mechanism at low electric field in the un-doped KNN film is ohmic mode and that at high electric field is space-charge-limited and Pool-Frenkel emission. After Mn doping, the dominant conduction mechanism at high electric field of KNN films changed single space-charge-limited. However, the introduction of higher amount of Mn into the KNN film would lead to a changed conduction mechanism from space-charge-limited to ohmic mode. Consequently, there exists an optimal amount of Mn doping of 2.0 mol. %. The 2.0 mol. % Mn doped KNN film shows the lowest leakage current density and the best electrical properties. With the secondary ion mass spectroscopies and x-ray photoelectron spectroscopy analyses, the homogeneous distribution in the KNN films and entrance of Mn element in the lattice of KNN perovskite structure were also confirmed.

  16. Mechanisms for the operation of thin film transistors on ferroelectrics

    SciTech Connect

    Seager, C.H.; McIntyre, D.; Tuttle, B.A.; Evans, J.

    1993-12-31

    The electric field emanating from the surface of a poled ferroelectric can control the conduction properties of an overlaying semiconducting film, this combination of materials can thus serve as a non-destructive readout, non-volatile memory device. Here the authors will describe a variety of experimental studies of these devices designed to probe the physics of their operation. The experimental systems included sputtered, n-type semiconductor (SC) films of In{sub 2}O{sub 3} and ZnO deposited on bulk PLZT ferroelectrics (FE) and thin PZT FE films. Two distinctly different types of device response were measured in this study; in the first, the change in SC film conductance observed in the remanent FE state is in the direction expected from the remanent polarization vector in the ferroelectric. In the second, typically seen in the thin film FE devices, the opposite behavior is observed. They find that these two general cases of behavior, including the observed variations of the SC film conductances and carrier mobilities, can be described by a general model which takes into account not only the FE displacement vector, but also charge injected from the semiconductor into the ferroelectric during biasing of the gate.

  17. Kinetics of nucleation of thermodynamically ordered ferroelectric phases in PbMg1/3Nb2/3O3- xPbTiO3 crystals with different compositions

    NASA Astrophysics Data System (ADS)

    Kamzina, L. S.

    2016-12-01

    The kinetics of electric field-induced nucleation of ordered ferroelectric phases from a mixed glassy relaxor state has been studied in a number of single-crystal (1- x)PbMg1/3Nb2/3O3- xPbTiO3 (PMN- xPT) solid solutions ( x = 29, 33, 35%) lying in a morphotropic phase region. It is shown that the formation of these phases and fast establishment of a macroscopic polarization are preceded by some delay time, depending on the electric field strength and temperature. It is found that the monoclinic phase is thermodynamically stable at room temperature in all the compounds in the time ( 3000 s) and electric field ( 1 kV/cm) ranges under study, whereas the monoclinic phase of the compound with x = 35% transforms, at temperatures near the temperature of the morphotropic phase transition after insignificant time interval of 100 s, to another stable ferroelectric tetragonal phase.

  18. Modulation of homochiral Dy(III) complexes: single-molecule magnets with ferroelectric properties.

    PubMed

    Li, Xi-Li; Chen, Chun-Lai; Gao, Yu-Liang; Liu, Cai-Ming; Feng, Xiang-Li; Gui, Yang-Hai; Fang, Shao-Ming

    2012-11-12

    Homochiral Dy(III) complexes: by changing the ligand-to-metal ratio, enantiomeric pairs of a Dy(III) complex of different nuclearity could be obtained. The mono- and dinuclear complexes exhibit characteristics of single-molecule magnets and different slow magnetic relaxation processes. In addition, the dinuclear complexes exhibit ferroelectric behavior, thus representing the first chiral polynuclear lanthanide-based single-molecule magnets with ferroelectric properties.

  19. Effects of grain size on the dielectric behavior of layered perovskite SrBi 4Ti 4O 15 ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Xu, Zhijun; Chu, Ruiqing; Hao, Jigong; Zhang, Yanjie; Li, Guorong; Yin, Qingrui

    2009-07-01

    In this paper, the effects of grain size on the dielectric behavior of SrBi 4Ti 4O 15 (SBT) ceramics were investigated. When the grain size is between 5 and 10 μm, there is an anomaly in dielectric behavior occurring below the Curie temperature ( Tc). This anomaly is grain-size dependent and is associated with the relaxation of oxygen vacancy clusters. We also found that the Tc of SBT increased with decreasing grain size.

  20. Ferroelectricity in undoped hafnium oxide

    SciTech Connect

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  1. Ferroelectric polymer-based nanocomposites: Towards multiferroic materials

    NASA Astrophysics Data System (ADS)

    Andrew, Jennifer S.

    This dissertation describes new routes towards magnetic-ferroelectric materials, leading to new materials for multiferroic applications. Multiferroic materials exhibit both ferromagnetic and ferroelectric properties, which tend to be mutually exclusive in single-phase materials. Therefore, composite materials are the obvious approach to realizing a material with both a high electric permittivity and high magnetic permeability. In composite systems the magnetoelectric effect arises from a mechanical coupling between a magnetostrictive and a piezoelectric phase. In order to enhance this coupling the interfacial area between the two phases should be maximized. This can be accomplished with nanoparticles, which have a large surface to volume ratio. This work begins with the synthesis of ferrimagnetic (MFe2O 4, M=Ni, Ni0.5Zn0.5, Co) and ferroelectric (BaTiO 3) nanoparticles. Aqueous coprecipitation routes produced superparamagnetic ferrite nanoparticles with an average diameter of 8-10 nanometers. Nanometer sized particles of barium titanate were also produced, but they were cubic and therefore do not exhibit ferroelectric behavior. We then developed routes to form nanoparticle-nanoparticle composites by controlling their stability in solution and therefore their final assembly into magnetic-dielectric nanocomposites. We also developed novel magnetic-ferroelectric composites by filling a ferroelectric polymer with magnetic and dielectric nanoparticles. Polyvinylidene difluoride (PVDF) fibers as well as fibers with continuously dispersed ferrite (Ni0.5Zn0.5Fe2O4) nanoparticles were prepared by electrospinning from dimethyl formamide (DMF) solutions. The effects of the electrospinning processing conditions and nanoparticle loading on the fiber morphology, crystallinity, and the crystalline structure of PVDF were examined. Magnetic and dielectric measurements were also performed. Electrospinning provides a simple technique to form PVDF in the ferroelectric beta

  2. The Modification of Ferroelectric Surfaces for Catalysis

    NASA Astrophysics Data System (ADS)

    Herdiech, Matthew William

    , the reactivity of the Cr2O3/LiNbO 3 system toward O and the reactivity of the RuO2/Pb(Zr 0.2Ti0.8)O3 system toward N, O, and NO was investigated. It is shown that well-ordered Cr2O3 films can be fabricated on positively and negatively poled LiNbO3 as evidenced by LEED, RHEED, XRD, and XPS; however, the conditions necessary to produce the films can cause Cr diffusion into the LiNbO3, potentially obscuring the film/substrate interface. It is also shown that surface Cr in the Cr 2O3 film can be oxidized to Cr5+ by atomic oxygen. Despite the suggestion that opposite compensating charges occur at the Cr2O3 surface on positively and negatively poled LiNbO3, no significant difference between O atom adsorption on Cr2O3 on the two polar substrates or on non-polar alpha-Al 2O3 (0001) could be detected. It is shown by NO TPD measurements that all RuO2-terminated Pb(Zr0.2Ti0.8)O3 surfaces were found to be active toward NO adsorption, although since 02 desorption was never detected it was determined that none of the surfaces were active toward NO dissociation. There were two active sites for NO adsorption for RuO2-terminated Pb(Zr0.2Ti0.8)O3: O on top of Ru and bare Ru sites. Little polarization dependence was observed for NO adsorption directly to Ru, with NO desorption occurring at 425 K for 1.7 ML RuO2 on positively poled Pb(Zr0.2Ti0.8)O 3 and 430 K for 1.8 ML RuO2 on negatively poled Pb(Zr 0.2Ti0.8)O3. However, significant polarization dependence was observed for adsorption to O on top of Ru, with NO desorption occurring at 285 K for 1.7 ML RuO 2 on positively poled Pb(Zr0.2Ti0.8)O3 and 230 K for 1.8 ML RuO2 on negatively poled Pb(Zr0.2Ti 0.8)O3. The stronger NO adsorption for RuO2 on positively poled Pb(Zr0.2Ti0.8)O3 is consistent with theoretical predictions, and shows that ferroelectric materials can be used as substrates in film/substrate systems with polarization dependent behavior. The lack of NO dissociation observed in the experiments is inconsistent with theoretical

  3. Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

    DOE PAGES

    Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.; ...

    2015-06-11

    The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These featuresmore » are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.« less

  4. Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric

    SciTech Connect

    Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.; Kalinin, Sergei V.; Eliseev, Eugene A.; Strikha, Maxym V.

    2015-06-11

    The origin and influence of finite-size effects on the nonlinear dynamics of space charge stored by multilayer graphene on a ferroelectric and resistivity of graphene channel were analyzed. In this paper, we develop a self-consistent approach combining the solution of electrostatic problems with the nonlinear Landau-Khalatnikov equations for a ferroelectric. The size-dependent behaviors are governed by the relations between the thicknesses of multilayer graphene, ferroelectric film, and the dielectric layer. The appearance of charge and electroresistance hysteresis loops and their versatility stem from the interplay of polarization reversal dynamics and its incomplete screening in an alternating electric field. These features are mostly determined by the dielectric layer thickness. The derived analytical expressions for electric fields and space-charge-density distribution in a multilayer system enable knowledge-driven design of graphene-on-ferroelectric heterostructures with advanced performance. We further investigate the effects of spatially nonuniform ferroelectric domain structures on the graphene layers’ conductivity and predict its dramatic increase under the transition from multi- to single-domain state in a ferroelectric. Finally, this intriguing effect can open possibilities for the graphene-based sensors and explore the underlying physical mechanisms in the operation of graphene field-effect transistor with ferroelectric gating.

  5. Ferroelectricity of CH3NH3PbI3 Perovskite.

    PubMed

    Fan, Zhen; Xiao, Juanxiu; Sun, Kuan; Chen, Lei; Hu, Yating; Ouyang, Jianyong; Ong, Khuong P; Zeng, Kaiyang; Wang, John

    2015-04-02

    Ferroelectricity has been believed to be an important but controversial origin of the excellent photovoltaic performance of organometal trihalide perovskites (OTPs). Here we investigate the ferroelectricity of a prototype OTP, CH3NH3PbI3 (MAPbI3), both theoretically and experimentally. Our first-principles calculations based on 3-D periodic boundary conditions reveal that a ferroelectric structure with polarization of ∼8 μC/cm(2) is the globally stable one among all possible tetragonal structures; however, experimentally no room-temperature ferroelectricity is observed by using polarization-electric field hysteresis measurements and piezoresponse force microscopy. The discrepancy between our theoretical and experimental results is attributed to the dynamic orientational disorder of MA(+) groups and the semiconducting nature of MAPbI3 at room temperature. Therefore, we conclude that MAPbI3 is not ferroelectric at room temperature; however, it is possible to induce and experimentally observe apparent ferroelectric behavior through our proposed ways. Our results clarify the controversy of the ferroelectricity in MAPbI3 and also provide valuable guidance for future studies on this active topic.

  6. Relaxor-PbTiO3 single crystals for various applications.

    PubMed

    Zhang, Shujun; Li, Fei; Luo, Jun; Sahul, Raffi; Shrout, Thomas R

    2013-08-01

    Piezoelectric materials lie at the heart of electromechanical devices. Applications include actuators, ultrasonic imaging, high intensity focused ultrasound, underwater ultrasound, nondestructive evaluation transducer, pressure sensors, and accelerometers, to name a few. In this work, the advantages and disadvantages of relaxor-PbTiO(3)-based single crystals are discussed, based on the requirements (figure of merit) of various applications, with emphasis on recent developments of the shear properties of single crystals as a function of temperature and applied fields.

  7. Relaxor-PbTiO3 Single Crystals for Various Applications

    PubMed Central

    Zhang, Shujun; Li, Fei; Luo, Jun; Sahul, Raffi; Shrout, Thomas R.

    2014-01-01

    Piezoelectric materials lie at the heart of electromechanical devices. Applications include actuators, ultrasonic imaging, high intensity focused ultrasound, underwater ultrasound, nondestructive evaluation transducer, pressure sensors, and accelerometers, to name a few. In this work, the advantages and disadvantages of relaxor-PbTiO3-based single crystals are discussed, based on the requirements (figure of merit) of various applications, with emphasis on recent developments of the shear properties of single crystals as a function of temperature and applied fields. PMID:25004527

  8. First-principles theory, coarse-grained models, and simulations of ferroelectrics.

    PubMed

    Waghmare, Umesh V

    2014-11-18

    large-scale simulations while capturing the relevant microscopic interactions quantitatively. In this Account, we first summarize the insights obtained into chemical mechanisms of ferroelectricity using first-principles DFT calculations. We then discuss the principles of construction of first-principles model Hamiltonians for ferroelectric phase transitions in perovskite oxides, which involve coarse-graining in time domain by integrating out high frequency phonons. Molecular dynamics simulations of the resulting model are shown to give quantitative predictions of material-specific ferroelectric transition behavior in bulk as well as nanoscale ferroelectric structures. A free energy landscape obtained through coarse-graining in real-space provides deeper understanding of ferroelectric transitions, domains, and states with inhomogeneous order and points out the key role of microscopic coupling between phonons and strain. We conclude with a discussion of the multiscale modeling strategy elucidated here and its application to other materials such as shape memory alloys.

  9. New Ferroelectric Aminoguanidinium Hexafluorozirconate

    NASA Astrophysics Data System (ADS)

    Bauer, Matt; Arbogast, Darin; Gallagher, Craig; Christie, Jim; Pugmire, David; Paulsen, Brian; Ross, Charles; Photinos, Panos; Nielson, Roger; Abrahams, Sidney C.

    2000-03-01

    Satisfaction of structural criteria led to the prediction that anhydrous aminoguanidinium hexafluorozirconate CN_4H_8ZrF6 is a new ferroelectric. Calorimetric and dielectric permittivity measurements reveal a highly-reproducible anomaly at the Curie temperature Tc = 383(1) K. The heat capacity undergoes an entropy change of 0.7(1) J mol-1 K-1 at Tc as the relative permittivity increases sharply by nearly an order of magnitude. Dielectric hysteresis at 295 K under the application of 1 MV m-1 ac is also observed at all T < Tc but not at T > T_c, confirming the prediction. Saturation is not reached before electric breakdown above 1 MV m-1 ac. The piezoelectric coefficient d_33 = 1.9 pC N-1 at 298 K. Polarisation reversal requires each symmetry-independent CN_4H_8^+2 ion to tilt and both N NH3 and C (NH_2)2 groups to rotate about the C N bond. Small atomic displacements within the ZrF_6-2 anion lead to mirror symmetry in course of the phase transition.

  10. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  11. Polarization switching in ferroelectric cathodes

    SciTech Connect

    Rosenman, G.; Shur, D.; Garb, K.; Cohen, R.; Krasik, Y.E.

    1997-07-01

    A new mechanism of polarization switching and electron emission in ferroelectric cathodes is proposed. Surface flashover plasma of a ferroelectric origin was observed on a polar ferroelectric surface [D. Shur, G. Rosenman, and Ya. E. Krasik, Appl. Phys. Lett. {bold 70}, 574 (1997)]. Simultaneous measurements of switched charge and plasma density show that expanding surface plasma represents a dynamic switching electrode. Direct measurements of ion/electron emission currents and surface analysis implemented by different analytic tools indicate that electrons and ions from the surface plasma contribute to spontaneous polarization screening. The high energy of charged particles emitted from the surface plasma is ascribed to a high surface potential during polarization switching. {copyright} {ital 1997 American Institute of Physics.}

  12. Ferroelectric control of spin polarization.

    PubMed

    Garcia, V; Bibes, M; Bocher, L; Valencia, S; Kronast, F; Crassous, A; Moya, X; Enouz-Vedrenne, S; Gloter, A; Imhoff, D; Deranlot, C; Mathur, N D; Fusil, S; Bouzehouane, K; Barthélémy, A

    2010-02-26

    A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

  13. Ferroelectric Fluid Flow Control Valve

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    An active valve is controlled and driven by external electrical actuation of a ferroelectric actuator to provide for improved passage of the fluid during certain time periods and to provide positive closure of the valve during other time periods. The valve provides improved passage in the direction of flow and positive closure in the direction against the flow. The actuator is a dome shaped internally prestressed ferroelectric actuator having a curvature, said dome shaped actuator having a rim and an apex. and a dome height measured from a plane through said rim said apex that varies with an electric voltage applied between an inside and an outside surface of said dome shaped actuator.

  14. Doped liquid nitrobenzene is ferroelectric.

    PubMed

    Shelton, David P; Quine, Zachary

    2007-11-28

    The high resolution hyper-Rayleigh light scattering spectrum for liquid nitrobenzene doped with triflic acid (CF(3)SO(3)H) shows a narrow spike at zero frequency shift which has the polarization signature of a polar longitudinal collective mode. This spectral spike disappears for pure nitrobenzene. The spectral spike is interpreted as due to ferroelectric domains in the liquid. The dopant molecules appear to induce ferroelectric organization of the nitrobenzene molecules which is otherwise absent in the pure liquid. Estimated domain size is 34 nm and relaxation time is 50 ns.

  15. Elastocaloric effect in ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Chauhan, Aditya; Patel, Satyanarayan; Vaish, Rahul

    2015-04-01

    Elastocaloric effect has been experimentally demonstrated in bulk (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 polycrystalline ferroelectric material. Predictions were made using Maxwell's relationship for elastocaloric effect. A maximum elastocaloric effect of 1.55 K was observed for an initial material temperature of 340 K and applied compressive stress of 0-250 MPa (under a constant electric field of 2 MV m-1). The reported value is several times larger than the peak electrocaloric effect for the same material. The results indicate that ferroelectric materials possess a huge potential for elastocaloric refrigeration.

  16. Stabilizing the ferroelectric phase in doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.

    2015-08-01

    The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO2 compared to TiN electrodes, yielding a Pr of up to 35 μC/cm2. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO2 films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO2.

  17. Stabilizing the ferroelectric phase in doped hafnium oxide

    SciTech Connect

    Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; Kersch, A.; Mikolajick, T.

    2015-08-21

    The ferroelectric properties and crystal structure of doped HfO{sub 2} thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO{sub 2} showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO{sub 2} was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO{sub 2} to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO{sub 2} compared to TiN electrodes, yielding a P{sub r} of up to 35 μC/cm{sup 2}. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO{sub 2} films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO{sub 2}.

  18. Generalized Ferroelectricity in the Mesomorphic Phase of Nylon Polymers

    NASA Astrophysics Data System (ADS)

    Zhang, Zhongbo; Zhu, Lei; Litt, Morton

    Novel ferroelectric polymers, featured by narrow electric displacement-electric (D-E) hysteresis loop, are attractive for electric energy storage applications due to their high dielectric constant and low loss property. Currently, only poly(vinylidene fluoride) (PVDF)-based copolymers (e-beamed) and terpolymers show novel ferroelectric behavior. It is desired to achieve novel ferroelectricity in other polymers such as nylons by carefully modifying the chemical and crystal structures. In this presentation, isomorphic crystals are successfully achieved by copolymerization of nylon 11 and nylon 12 with different compositions. In this way, both chemical and structural defects (i.e., dangling amide groups and kinked bonds) are introduced into the mesomorphic phase. As a consequence, hydrogen bonding interaction is successfully weakened and thus enhanced ferroelectricity with higher maximum polarization and better polarizability is obtained. In addition, for the purpose of further disturbing the mesomorphic phase and pinning effect, partially methylated nylon copolymers are synthesized. With the help of N-methylation of amide groups, the methylated nylon copolymers show relatively narrow hysteresis loops, suggesting the pinning effect from the N-methylated amide moieties.

  19. Ferroelectric, Thermal, and Magnetic Characteristics of Praseodymium Malonate Hexahydrate Crystals

    NASA Astrophysics Data System (ADS)

    Ahmad, Nazir; Ahmad, M. M.; Kotru, P. N.

    2016-04-01

    Gel-grown single crystals of [Pr2(C3H2O4)3(H2O)6] exhibit remarkably flat habit faces, the most predominant being {110}. High-resolution x-ray diffraction analysis showed that the crystals are free from structural grain boundaries, which is the key requirement for single crystals for use in the microelectronics industry to serve as low-dielectric-constant ferroelectric material. The dielectric behavior recorded on {110} planes of single crystals shows that the crystal is ferroelectric with transition temperature T c = 135°C, which differs from the Curie-Weiss temperature T 0 by 2°C (T 0 < T c). Material in pellet form is shown to exhibit slightly different dielectric behavior. Polarization versus electric field confirms the ferroelectric behavior of the material. The dielectric behavior is also supported by the results of thermal studies, viz. thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The magnetic susceptibility and magnetic moment are calculated to be 30.045 × 10-6 emu and 3.092 BM, respectively.

  20. The Soft Mode Driven Dynamics in Ferroelectric Perovskites at the Nanoscale: An Atomistic Study

    NASA Astrophysics Data System (ADS)

    McCash, Kevin

    . The performance of a ferroelectric device is therefore directly influenced by the dynamics of the soft mode. Interestingly, however, little study has been done on the effect of mechanical boundary conditions on the soft modes of perovskites. Understanding the effect of mechanical forces on the soft modes is critical to device applications as complicated growth structures often are the cause of pressures, stresses and strains. Using classical molecular dynamics we study the effect of hydrostatic pressure, uniaxial stress, biaxial stress and biaxial strain on the soft modes of the ferroelectric PbTiO 3. The results of this study indicate the existence of Curie-Weiss laws for not only hydrostatic pressure, which is well known, but also for uniaxial stress, biaxial stress and biaxial strain. The mode frequencies are also seen to respond very differently to these mechanical forces and lead to a more complete picture of the behavior of nanoscale ferroelectrics. One nanoscale geometry of perovskite ferroelectrics is the pseudo one-dimensional nanowire. These structures have very unique properties that are highly attractive for use as interconnects, nanoscale sensors or more directly in computer memory devices. Perovskite nanowires have only recently been synthesized and the techniques are not well developed. While progress has been made towards consistently fabricating uniform, high quality nanowires experimental investigation of their properties is prohibitively difficult. Of immediate interest is the polarization reversal dynamics of ferroelectric nanowires. The reading and writing of bits of information stored in a wire's polarization state is done by switching the polarization. Again using classical molecular dynamics we study the polarization reversal dynamics in ferroelectric nanowires made of Pb(Ti1-xZrx)O 3 disordered alloy. We find that there are two competing mechanisms for polarization reversal and that the interplay of these mechanisms is dependent on electric

  1. Quantum breathers in lithium tantalate ferroelectrics

    NASA Astrophysics Data System (ADS)

    Biswas, Arindam; Adhikar, Sutapa; Choudhary, Kamal; Basu, Reshmi; Bandyopadhyay, A. K.; Bhattacharjee, A. K.; Mandal, D.

    2013-08-01

    Lithium tantalate is technologically one of the most important ferroelectric materials with a low poling field that has several applications in the field of photonics and memory switching devices. In a Hamiltonian system, such as dipolar system, the polarization behavior of such ferroelectrics can be well-modeled by Klein-Gordon (K-G) equation. Due to strong localization coupled with discreteness in a nonlinear K-G lattice, there is a formation of breathers and multi-breathers that manifest in the localization peaks across the domains in polarization-space-time plot. Due to the presence of nonlinearity and also impurities (as antisite tantalum defects) in the structure, dissipative effects are observed and hence dissipative breathers are studied here. To probe the quantum states related to discrete breathers, the same K-G lattice is quantized to give rise to quantum breathers (QBs) that are explained by a periodic boundary condition. The gap between the localized and delocalized phonon-band is a function of impurity content that is again related to the effect of pinning of domains due to antisite tantalum defects in the system, i.e., a point of easier switching within the limited amount of data on poling field, which is related to Landau coefficient (read, nonlinearity). Secondly, in a non-periodic boundary condition, the temporal evolution of quanta shows interesting behavior in terms of `critical' time of redistribution of quanta that is proportional to QB's lifetime in femtosecond having a possibility for THz applications. Hence, the importance of both the methods for characterizing quantum breathers is shown in these perspectives.

  2. Scaling effects of relaxor-PbTiO(3) crystals and composites for high frequency ultrasound.

    PubMed

    Lee, Hyeong Jae; Zhang, Shujun; Shrout, Thomas R

    2010-06-15

    The dielectric and piezoelectric properties of Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PMN-PT) and Pb(In(12)Nb(12))O(3)-Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric single crystals were investigated as a function of thicknessscale in monolithic and piezoelectricpolymer 1-3 composites. For the case of PMN-PT single crystals, the dielectric (epsilon33Tepsilon0) and electromechanical properties (k(33)) were found to significantly decrease with decreasing thickness (500-40 mum), while minimal thickness dependency was observed for PIN-PMN-PT single crystals. Temperature dependent dielectric behavior of the crystals suggested that the observed thickness dependence in PMN-PT was strongly related to their relatively large domain size (>10-20 mum). As anticipated, 1-3 composite comprised of PIN-PMN-PT crystals exhibited superior properties to that of PMN-PT composite at high frequencies (>20 MHz). However, the observed couplings, being on the order of 80%, were disappointedly low when compared to their monolithic counterparts, the result of surface damage introduced during the dicing process, as evidenced by the broadened [002] peaks in the x-ray diffraction pattern.

  3. Structure and Dynamics of Domains in Ferroelectric Nanostructures. In-situ TEM Studies

    SciTech Connect

    Pan, Xiaoqing

    2015-06-30

    The goal of this project was to explore the structure and dynamic behaviors of ferroelectric domains in ferroelectric thin films and nanostructures by advanced transmission electron microscopy (TEM) techniques in close collaboration with phase field modeling. The experimental techniques used include aberration-corrected sub-Å resolution TEM and in-situ TEM using a novel scanning tunneling microscopy (STM) - TEM holder that allows the direct observation of nucleation and dynamic evolution of ferroelectric domains under applied electric field. Specifically, this project was aimed to (1) to study the roles of static electrical boundary conditions and electrical charge in controlling the equilibrium domain structures of BiFeO3 thin films with controlled substrate constraints, (2) to explore the fundamental mechanisms of ferroelectric domain nucleation, growth, and switching under an applied electric field in both uniform thin films and nanostructures, and to understand the roles of crystal defects such as dislocations and interfaces in these processes, (3) to understand the physics of ferroelectric domain walls and the influence of defects on the electrical switching of ferroelectric domains.

  4. Relaxor-like dielectric response of spin liquid CuCrO{sub 2}

    SciTech Connect

    Mazumder, N. Roy, R.; Ghorai, U. K.; Saha, S.; Chattopadhyay, K. K.

    2014-04-24

    Broadband dielectric analysis (10{sup −2}-10{sup 7} Hz) of layered triangular lattice CuCrO{sub 2} is performed (123 K - 473 K) and analyzed in connection with recently observed spin frustration in this multiferroic [M. Poienar et al. Phys. Rev. B 81, 104411, (2010); M. Frontzek et al. Phys. Rev. B 84, 094448, (2011)]. Most unexpectedly, this well known delafossite has found to have nontrivial charge degrees of freedom, being characterized by a relaxor-like dielectric relaxation around 375 K with FWHM of ∼100K. The result strongly suggests the existence of intermolecular Coulomb interaction between charge disproportionation induced electric dipoles.

  5. Structure-Curie temperature relationships in BaTiO3-based ferroelectric perovskites: Anomalous behavior of (Ba ,Cd )TiO3 from DFT, statistical inference, and experiments

    NASA Astrophysics Data System (ADS)

    Balachandran, Prasanna V.; Xue, Dezhen; Lookman, Turab

    2016-04-01

    One of the key impediments to the development of BaTiO3-based materials as candidates to replace toxic-Pb-based solid solutions is their relatively low ferroelectric Curie temperature (TC). Among many potential routes that are available to modify TC, ionic substitutions at the Ba and Ti sites remain the most common approach. Here, we perform density functional theory (DFT) calculations on a series of A TiO3 and Ba B O3 perovskites, where A =Ba , Ca, Sr, Pb, Cd, Sn, and Mg and B =Ti , Zr, Hf, and Sn. Our objective is to study the relative role of A and B cations in impacting the TC of the tetragonal (P 4 m m ) and rhombohedral (R 3 m ) ferroelectric phases in BaTiO3-based solid solutions, respectively. Using symmetry-mode analysis, we obtain a quantitative description of the relative contributions of various divalent (A ) and tetravalent (B ) cations to the ferroelectric distortions. Our results show that Ca, Pb, Cd, Sn, and Mg have large mode amplitudes for ferroelectric distortion in the tetragonal phase relative to Ba, whereas Sr suppresses the distortions. On the other hand, Zr, Hf, and Sn tetravalent cations severely suppress the ferroelectric distortion in the rhombohedral phase relative to Ti. In addition to symmetry modes, our calculated unit-cell volume also agrees with the experimental trends. We subsequently utilize the symmetry modes and unit-cell volumes as features within a machine learning approach to learn TC via an inference model and uncover trends that provide insights into the design of new high-TCBaTiO3 -based ferroelectrics. The inference model predicts CdTiO3-BaTiO3 solid solutions to have a higher TC and, therefore, we experimentally synthesized these solid solutions and measured their TC. Although the calculated mode strength for CdTiO3 in the tetragonal phase is even larger than that for PbTiO3, the TC of CdTiO3-BaTiO3 solid solutions in the tetragonal phase does not show any appreciable enhancement. Thus, CdTiO3-BaTiO3 does not follow the

  6. Nanocharacterization of the negative stiffness of ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Alipour Skandani, A.; Ctvrtlik, R.; Al-Haik, M.

    2014-08-01

    Phase changing materials such as ferroelectric materials could exhibit negative stiffness under certain thermomechanical environments. This negative stiffness is embodied by a deflection along the opposite direction of the applied load. So far negative stiffness materials were investigated with the specific morphology of embedded inclusions in stiff matrices then the resulting composite is studied to measure the behavior of each constituent indirectly. In this study, a modified nonisothermal nanoindentation method is developed to measure the negative stiffness of triglycine sulfate single crystal directly. This in-situ method is intended to first demonstrate the feasibility of detecting the negative stiffness via nanoindentation and nanocreep of a ferroelectric material at its Curie point and then to quantify the negative stiffness without the need for embedding the crystal within a stiffer matrix.

  7. An energy-consistent fracture model for ferroelectrics

    NASA Astrophysics Data System (ADS)

    Miao, Hongchen; Li, Faxin

    2017-02-01

    The fracture behavior of ferroelectrics has been intensively studied in recent decades, though currently a widely accepted fracture mechanism is still lacking. In this work, enlightened by previous experimental observations that crack propagation in ferroelectrics is always accompanied by domain switching, we propose a micromechanical model in which both crack propagation and domain switching are controlled by energy-based criteria. Both electric energy and mechanical energy can induce domain switching, while only mechanical energy can drive crack propagation. Furthermore, constrained domain switching is considered in this model, leading to the gradient domain switching zone near the crack tip. Analysis results show that stress-induced ferroelastic switching always has a toughening effect as the mechanical energy release rate serves as the driving force for both fracture and domain switching. In comparison, the electric-field-induced switching may have either a toughening or detoughening effect. The proposed model can qualitatively agree with the existing experimental results.

  8. Nanodynamics of ferroelectric ultrathin films.

    PubMed

    Zhang, Qingteng; Herchig, R; Ponomareva, I

    2011-10-21

    The nanodynamics of ferroelectric ultrathin films made of PbTi(0.6)Zr(0.4)TiO(3) alloy is explored via the use of a first-principles-based technique. Our atomistic simulations predict that the nanostripe domains which constitute the ground state of ferroelectric ultrathin films under most electric boundary conditions oscillate under a driving ac field. Furthermore, we find that the atomically thin wall, or nanowall, that separates the nanodomains with different polarization directions behaves as an elastic object and has a mass associated with it. The nanowall mass is size-dependent and gives rise to a unique size-driven transition from resonance to relaxational dynamics in ultrathin films. A general theory of nanodynamics in such films is developed and used to explain all computational findings. In addition, we find an unusual dynamical coupling between nanodomains and mechanical deformations that could potentially be used in ultrasensitive electromechanical nanosensors.

  9. Ferroelectric Stirling-Cycle Refrigerator

    NASA Technical Reports Server (NTRS)

    Jalink, Antony, Jr. (Inventor); Hellbaum, Richard F. (Inventor); Rohrbach, Wayne W. (Inventor)

    1999-01-01

    A Stirling-cycle refrigerator has a three-pump configuration and pumping sequence, in which one pump serves as a compressor. one pump serves as an expander, and one pump serves as a displacer. The pumps are ferroelectrically actuated diaphragm pumps which are coordinated by synchronizing the ferroelectric-actuator voltages in such a way that the net effect of the displacer is to reduce the deleterious effect of dead space; that is, to circulate a greater fraction of the working fluid through the heat exchangers than would be possible by use of the compressor and expander alone. In addition. the displacer can be controlled separately to make the flow of working fluid in the heat exchangers turbulent (to increase the rate of transfer of heat at the cost of greater resistance to flow) or laminar (to decrease the resistance to flow at the cost of a lower heat-transfer rate).

  10. Enhanced ferroelectric polarization in tetragonally strained NaNbO3 thin film on single crystal Rh substrate

    NASA Astrophysics Data System (ADS)

    Maeng, W. J.; Jung, I.; Son, J. Y.

    2012-06-01

    Epitaxial NaNbO3 thin films were deposited on single crystal Rh substrates by pulsed laser deposition. The epitaxial NaNbO3 thin film exhibited the tetragonally stained structure with a c/a ratio of about 1.04 and a good ferroelectric property with the high remanent polarization (Pr) of about 40 μC/cm2. The piezoresponse force microscope study revealed that the epitaxial NaNbO3 thin film has a mosaic ferroelectric domain structure. A Pt/NaNbO3/Rh capacitor showed rapid ferroelectric switching behavior, which gives opportunity for a non-volatile memory application.

  11. Domain Processes in Ferroelectric Ceramics

    DTIC Science & Technology

    1994-04-14

    WALLS Electron holography utilizing the wave characteristics of electrons. Through a sharp emission tip, the emitted electron beam is largely coherent, or...mirostructural modulation at 25% doping. The strongly first order ferroelectric phase transition in PbTiO3 is also gradually changed to a nearly second...a new domain configuraton. 13 The end-member of the PZT solid solution, PbTiO3 , has the highest transition temperature (Tc = 490 °C) and the largest

  12. Ferroelectric Graphene-Perovskite Interfaces.

    PubMed

    Volonakis, George; Giustino, Feliciano

    2015-07-02

    Owing to their record-breaking energy conversion efficiencies, hybrid organometallic perovskites have emerged as the most promising light absorbers and ambipolar carrier transporters for solution-processable solar cells. Simultaneously, due to its exceptional electron mobility, graphene represents a prominent candidate for replacing transparent conducting oxides. Thus, it is possible that combining these wonder materials may propel the efficiency toward the Schokley-Queisser limit. Here, using first-principles calculations on graphene-CH3NH3PbI3 interfaces, we find that graphene suppresses the octahedral tilt in the very first perovskite monolayer, leading to a nanoscale ferroelectric distortion with a permanent polarization of 3 mC/m(2). This interfacial ferroelectricity drives electron extraction from the perovskite and hinders electron-hole recombination by keeping the electrons and holes separated. The interfacial ferroelectricity identified here simply results from the interplay between graphene's planar structure and CH3NH3PbI3's octahedral connectivity; therefore, this mechanism may be effective in a much broader class of perovskites, with potential applications in photovoltaics and photocatalysis.

  13. High-frequency programmable acoustic wave device realized through ferroelectric domain engineering

    NASA Astrophysics Data System (ADS)

    Ivry, Yachin; Wang, Nan; Durkan, Colm

    2014-03-01

    Surface acoustic wave devices are extensively used in contemporary wireless communication devices. We used atomic force microscopy to form periodic macroscopic ferroelectric domains in sol-gel deposited lead zirconate titanate, where each ferroelectric domain is composed of many crystallites, each of which contains many microscopic ferroelastic domains. We examined the electro-acoustic characteristics of the apparatus and found a resonator behavior similar to that of an equivalent surface or bulk acoustic wave device. We show that the operational frequency of the device can be tailored by altering the periodicity of the engineered domains and demonstrate high-frequency filter behavior (>8 GHz), allowing low-cost programmable high-frequency resonators.

  14. Kinetics of Ferroelectric Phase Transition: Nonlinear Pyroelectric Effect and Ferroelectric Solar Cell

    NASA Astrophysics Data System (ADS)

    Itskovsky, M.

    1999-08-01

    Kinetics of a ferroelectric phase transition in thin ferroelectric layer (film), coated with metallic films [metal-ferroelectric-metal (MFM) system] and overheated with various heating rates through phase transition temperature by solar or laser irradiation impulse, is investigated. Dynamical nonlinear pyroelectric effect (pyroelectric current and polarization) as well as anomalies of dielectric permittivity and specific heat are calculated as functions of changing in time temperature for various heating rates. Conversion efficiency during heating of the MFM system (served as ferroelectric solar cell), operating due to the nonlinear pyroelectric effect in the ferroelectric phase transition region, ranges from a few percent for ferroelectrics of the triglycine sulphate (TGS) type to above 10% for the NaNO2 type ferroelectrics, reaching the order of efficiency of photovoltaic solar cell.

  15. Role of polar nanoregions with weak random fields in Pb-based perovskite ferroelectrics

    PubMed Central

    Helal, M. A.; Aftabuzzaman, M.; Tsukada, S.; Kojima, S.

    2017-01-01

    In relaxor ferroelectrics, the role of randomly orientated polar nanoregions (PNRs) with weak random fields (RFs) is one of the most puzzling issues of materials science. The relaxation time of polarization fluctuations of PNRs, which manifests themselves as a central peak (CP) in inelastic light scattering, is the important physical quantity to understand the dynamics of PNRs. Here, the angular and temperature dependences of depolarized and polarized CPs in 0.44Pb(Mg1/3Nb2/3)O3-0.56PbTiO3 single crystals with weak RFs have been studied by Raman and Brillouin scattering, respectively. The CPs observed in Raman scattering show the very clear angular dependence which is consistent with the local tetragonal symmetry. It is different from the well-known local rhombohedral symmetry with strong RFs for Pb(Mg1/3Nb2/3)O3. In Brillouin scattering, depolarized and polarized CPs show two relaxation processes corresponding to transverse and longitudinal fluctuations of PNRs. The remarkable slowing down towards the Curie temperature was observed for transverse fluctuations in local tetragonal symmetry. PMID:28300152

  16. Role of polar nanoregions with weak random fields in Pb-based perovskite ferroelectrics

    NASA Astrophysics Data System (ADS)

    Helal, M. A.; Aftabuzzaman, M.; Tsukada, S.; Kojima, S.

    2017-03-01

    In relaxor ferroelectrics, the role of randomly orientated polar nanoregions (PNRs) with weak random fields (RFs) is one of the most puzzling issues of materials science. The relaxation time of polarization fluctuations of PNRs, which manifests themselves as a central peak (CP) in inelastic light scattering, is the important physical quantity to understand the dynamics of PNRs. Here, the angular and temperature dependences of depolarized and polarized CPs in 0.44Pb(Mg1/3Nb2/3)O3-0.56PbTiO3 single crystals with weak RFs have been studied by Raman and Brillouin scattering, respectively. The CPs observed in Raman scattering show the very clear angular dependence which is consistent with the local tetragonal symmetry. It is different from the well-known local rhombohedral symmetry with strong RFs for Pb(Mg1/3Nb2/3)O3. In Brillouin scattering, depolarized and polarized CPs show two relaxation processes corresponding to transverse and longitudinal fluctuations of PNRs. The remarkable slowing down towards the Curie temperature was observed for transverse fluctuations in local tetragonal symmetry.

  17. Ferroelectric studies of excessive Sm{sup 3+} containing perovskite PZT and pyrochlore biphase ceramics

    SciTech Connect

    Babu, T. Anil; Sastry, D. L.; Ramesh, K. V.; Reddy, V. Raghavendra

    2014-04-24

    Polycrystalline samples of Sm{sup 3+} modified Pb{sub 1−x} Sm{sub 2x/3} (Zr{sub 0.6}Ti{sub 0.4}) O{sub 3} (PSZT) ceramics (where x = 0.1, 0.2, 0.3, 0.4) have been prepared by a high energy ball milling technique, followed by calcination at 950°C and sintering at 1150°C. As x is increased more than 0.1 mole%, considerable secondary phase has been formed. This phase has been identified as pyrochlore Sm{sub 2}Ti{sub 2}O{sub 7} from its X-ray diffraction (XRD) peaks. The XRD studies also indicate that the perovskte phases of the present systems undergo a dopant induced phase transformation from rhombohedral to tetragonal strucure. All the samples exhibit diffuse but non-relaxor type ferroelectric phase transition. The results of dielectric and hysteresis studies of these materials are presented.

  18. Room temperature ferroelectricity in one-dimensional single chain molecular magnets [{M(Δ)M(Λ)}(ox)2(phen)2]n (M = Fe and Mn)

    NASA Astrophysics Data System (ADS)

    Bhatt, Pramod; Mukadam, M. D.; Meena, S. S.; Mishra, S. K.; Mittal, R.; Sastry, P. U.; Mandal, B. P.; Yusuf, S. M.

    2017-03-01

    The ferroelectric materials are mainly focused on pure inorganic oxides; however, the organic molecule based materials have recently attracted great attention because of their multifunctional properties. The mixing of oxalate and phenanthroline ligands with metal ions (Fe or Mn) at room temperature followed by hydrothermal treatment results in the formation of one-dimensional single chain molecular magnets which exhibit room temperature dielectric and ferroelectric behavior. The compounds are chiral in nature, and exhibit a ferroelectric behavior, attributed to the polar point group C2, in which they crystallized. The compounds are also associated with a dielectric loss and thus a relaxation process. The observed electric dipole moment, essential for a ferroelectricity, has been understood quantitatively in terms of lattice distortions at two different lattice sites within the crystal structure. The studied single chain molecular magnetic materials with room temperature ferroelectric and dielectric properties could be of great technological importance in non-volatile memory elements, and high-performance insulators.

  19. Stress and orientation effects in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Lian, Lei

    Ferroelectric thin films have higher energy densities, larger strain capabilities, and more rapid response times than their bulk counter parts. The present work investigates the residual stress and preferred crystallographic orientation effects on the electromechanical behavior of ferroelectric thin films from both experimental and theoretical standpoints. A high resolution laser Doppler heterodyne interferometer is developed to quantify the piezoelectric response and field-induced strains in lead zirconate titanate (PZT) thin films ranging from 0.5 to 2.0 mum in thickness. The d33 coefficients of the films are calculated via finite element analysis and compared with existing analytical estimates. PZT films with (100) preferred orientation display superior ferroelectric properties than films with (111) preferred orientation. In addition, the properties of the films are found to be strongly dependent on the film thickness. The dependence on thickness is correlated with the residual stress state in the film. A numerical study based on classic lamination theory is performed to study the development of residual stress induced by thermal expansion mismatch between the film and substrate during the fabrication process. Comparison of numerical results with experimental data reveals the importance of factors such as drying of gel, grain formation and interaction, and phase transformation in the prediction of residual stress in ferroelectric thin films. The effects of stress on the response of ferroelectric thin films are measured directly by a beam bending experiment in a unique double-beam laser interferometer. Application of a compressive bending stress to relieve the tensile residual stress in PZT (52/48) film increases the field-induced strains. The opposite effect is observed for application of a tensile stress. To gain further insight into these observations, a previously developed micro-electro-mechanical model is applied to numerically simulate the response of

  20. Predictive modelling of ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Velev, Julian P.; Burton, John D.; Zhuravlev, Mikhail Ye; Tsymbal, Evgeny Y.

    2016-05-01

    Ferroelectric tunnel junctions combine the phenomena of quantum-mechanical tunnelling and switchable spontaneous polarisation of a nanometre-thick ferroelectric film into novel device functionality. Switching the ferroelectric barrier polarisation direction produces a sizable change in resistance of the junction—a phenomenon known as the tunnelling electroresistance effect. From a fundamental perspective, ferroelectric tunnel junctions and their version with ferromagnetic electrodes, i.e., multiferroic tunnel junctions, are testbeds for studying the underlying mechanisms of tunnelling electroresistance as well as the interplay between electric and magnetic degrees of freedom and their effect on transport. From a practical perspective, ferroelectric tunnel junctions hold promise for disruptive device applications. In a very short time, they have traversed the path from basic model predictions to prototypes for novel non-volatile ferroelectric random access memories with non-destructive readout. This remarkable progress is to a large extent driven by a productive cycle of predictive modelling and innovative experimental effort. In this review article, we outline the development of the ferroelectric tunnel junction concept and the role of theoretical modelling in guiding experimental work. We discuss a wide range of physical phenomena that control the functional properties of ferroelectric tunnel junctions and summarise the state-of-the-art achievements in the field.

  1. Quantum Monte Carlo simulation of the ferroelectric or ferrielectric nanowire with core shell morphology

    NASA Astrophysics Data System (ADS)

    Feraoun, A.; Zaim, A.; Kerouad, M.

    2016-09-01

    By using the Quantum Monte Carlo simulation; the electric properties of a nanowire, consisting of a ferroelectric core of spin-1/2 surrounded by a ferroelectric shell of spin-1/2 with ferro- or anti-ferroelectric interfacial coupling have been studied within the framework of the Transverse Ising Model (TIM). We have examined the effects of the shell coupling Js, the interfacial coupling JInt, the transverse field Ω, and the temperature T on the hysteresis behavior and on the electric properties of the system. The remanent polarization and the coercive field as a function of the transverse field and the temperature are examined. A number of characteristic behavior have been found such as the appearance of triple hysteresis loops for appropriate values of the system parameters.

  2. Polarization-electric field hysteresis of ferroelectric PVDF films: comparison of different measurement regimes.

    PubMed

    Wegener, Michael

    2008-10-01

    Polarization-electric field hysteresis is an important property of ferroelectric materials. Different experimental procedures and measurement regimes are demonstrated and frequently used in order to determine this hysteresis behavior. For the characterization of the poling behavior of ferroelectric polymers it is common to analyze the poling current and separate current contributions, which are based on charging the sample capacitance as well as on conductivity. Experimentally this can be realized with two different measurement regimes, either poling of the sample with bipolar cycles or with a sequence of bipolar and unipolar cycles of the applied electric field. Here, we demonstrate the comparison of both measurement routines by performing poling experiments on the same ferroelectric PVDF sample.

  3. Thermopower in highly reduced n -type ferroelectric and related perovskite oxides and the role of heterogeneous nonstoichiometry

    NASA Astrophysics Data System (ADS)

    Lee, Soonil; Yang, Gaiying; Wilke, Rudeger H. T.; Trolier-McKinstry, Susan; Randall, Clive A.

    2009-04-01

    Nonstoichiometric perovskite-structured alkaline-earth titanates with ferroelectric, paraelectric, and paraelastic phases were investigated for thermoelectric properties. Depending on the degree of reduction, different trends are noted. In ferroelectric BaTiO3 , thermopower anomalies are observed in and around the paraelectric (Pm3m) -ferroelectric (P4mm) and ferroelectric (P4mm) -ferroelectric (Cmm2) phase transition temperatures, and the nature of these trends was found to depend on the degree of reduction. This indicates a coupling between the thermoelectric effect and the ferroelectric phase transition, a phenomena also noted in the recent work of Kolodiazhnyi [T. Kolodiazhnyi, Phys. Rev. B 78, 045107 (2008)]. Heavily reduced SrTiO3-δ showed a strong metallic behavior in the thermopower and conductivity data without anomalies as the phase is paraelastic in the temperature range studied. The nature of the reduction from the low oxygen partial pressure anneals is heterogeneous; clusters of defects ˜3nm wide meander through the crystallites. The defective regions have high oxygen vacancy concentrations, and the chemical nature of the Ti changes from Ti4+ to Ti3+ . The complex nature of the thermochemical reduction near the metal-insulator transition will challenge simple physical models for oxide thermoelectrics. Traditional thermopower models are discussed in relation to the reported thermopower and the conductivity in the paraelectric and ferroelectric phases.

  4. High Temperature Ferroelectrics for Actuators: Recent Developments and Challenges

    NASA Technical Reports Server (NTRS)

    Sehirlioglu, Alp; Kowalski, Benjamin

    2014-01-01

    A variety of piezoelectric applications have been driving the research in development of new high temperature ferroelectrics; ranging from broader markets such as fuel and gas modulation and deep well oil drilling to very specific applications such as thermoacoustic engines and ultrasonic drilling on the surface of Venus. The focus has been mostly on increasing the Curie temperature. However, greater challenges for high temperature ferroelectrics limit the operating temperature to levels much below the Curie temperature. These include enhanced loss tangent and dc conductivity at high fields as well as depoling due to thermally activated domain rotation. The initial work by Eitel et al. [Jpn. J. Appl. Phys., 40 [10, Part 1] 59996002 (2001)] increased interest in investigation of Bismuth containing perovskites in solid solution with lead titanate. Issues that arise vary from solubility limits to increased tetragonality; the former one prohibits processing of morphotropic phase boundary, while the latter one impedes thorough poling of the polycrystalline ceramics. This talk will summarize recent advances in development of high temperature piezoelectrics and provide information about challenges encountered as well as the approaches taken to improve the high temperature behavior of ferroelectrics with a focus on applications that employ the converse piezoelectric effect.

  5. Enhanced electrocaloric effect in displacive-type organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Ding, L. J.; Zhong, Y.; Fan, S. W.; Zhu, L. Y.

    2015-08-01

    We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature TC. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As TC is tuned to ˜310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above TC and a metaelectric transition line below TC that demonstrates an FE switching behavior with an antiparallel field.

  6. Enhanced electrocaloric effect in displacive-type organic ferroelectrics

    SciTech Connect

    Ding, L. J. Zhong, Y.; Fan, S. W.; Zhu, L. Y.

    2015-08-07

    We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature T{sub C}. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As T{sub C} is tuned to ∼310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above T{sub C} and a metaelectric transition line below T{sub C} that demonstrates an FE switching behavior with an antiparallel field.

  7. Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles.

    PubMed

    Mangeri, John; Espinal, Yomery; Jokisaari, Andrea; Pamir Alpay, S; Nakhmanson, Serge; Heinonen, Olle

    2017-01-26

    Composite materials comprised of ferroelectric nanoparticles in a dielectric matrix are being actively investigated for a variety of functional properties attractive for a wide range of novel electronic and energy harvesting devices. However, the dependence of these functionalities on shapes, sizes, orientation and mutual arrangement of ferroelectric particles is currently not fully understood. In this study, we utilize a time-dependent Ginzburg-Landau approach combined with coupled-physics finite-element-method based simulations to elucidate the behavior of polarization in isolated spherical PbTiO3 or BaTiO3 nanoparticles embedded in a dielectric medium, including air. The equilibrium polarization topology is strongly affected by particle diameter, as well as the choice of inclusion and matrix materials, with monodomain, vortex-like and multidomain patterns emerging for various combinations of size and materials parameters. This leads to radically different polarization vs. electric field responses, resulting in highly tunable size-dependent dielectric properties that should be possible to observe experimentally. Our calculations show that there is a critical particle size below which ferroelectricity vanishes. For the PbTiO3 particle, this size is 2 and 3.4 nm, respectively, for high- and low-permittivity media. For the BaTiO3 particle, it is ∼3.6 nm regardless of the medium dielectric strength.

  8. The Improper Ferroelectric Phase Transition of Magnesium-Chloride Boracite

    NASA Astrophysics Data System (ADS)

    Arakelian, Henry Edward

    Laser Raman backscattering has been used to determine the Raman scattering strength as a function of temperature, in the ferroelectric phase of magnesium-chloride (Mg-Cl) boracite. Raman spectroscopy looks directly at the optical phonon responsible for the ferroelectric phase transition, at 142 cm('-1). Ferroelectricity may be explained by the Landau theory of second order phase transitions. The thermodynamic Gibbs potential is assumed to be expandable in terms of the phase transition's order parameter. Within this context there are two models, one proposed by V. Dvorak and another by A. Levanyuk, to explain the coupled (improper) phase transition of boracite. Dvorak takes the primary order parameter to be the lattice distorting mode, while Levanyuk assigns the polar mode as the order parameter. Both models adequately predict dielectric susceptibility vs. temperature. It is shown here how to calculate, for any coupled phase transition, the dielectric susceptibility, oscillator strength, spontaneous polarization, and polarization-optic coefficient. The polarization-optic coefficient is necessary to calculate the total Raman scattering strength. An expression is developed where the scattering strength is written as a combination of derivatives of the Gibbs potential and the Bose population factor. The models of Levanyuk and Dvorak are computer simulated and predict very different behavior of the scattering strength. The Dvorak model predicts a strong divergence in the intensity of Raman scattering at the critical temperature. The results of experiment do not show such a divergence and therefore confirm the Levanyuk model.

  9. Anomalously rotary polarization discovered in homochiral organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Li, Peng-Fei; Tang, Yuan-Yuan; Wang, Zhong-Xia; Ye, Heng-Yun; You, Yu-Meng; Xiong, Ren-Gen

    2016-11-01

    Molecular ferroelectrics are currently an active research topic in the field of ferroelectric materials. As complements or alternatives of conventional inorganic ferroelectrics, they have been designed to realize various novel properties, ranging from multiferroicity and semiconductive ferroelectricity to ferroelectric photovoltaics and ferroelectric luminescence. The stabilizing of ferroelectricity in various systems is owing to the flexible tailorability of the organic components. Here we describe the construction of optically active molecular ferroelectrics by introducing homochiral molecules as polar groups. We find that the ferroelectricity in (R)-(-)-3-hydroxlyquinuclidinium halides is due to the alignment of the homochiral molecules. We observe that both the specific optical rotation and rotatory direction change upon paraelectric-ferroelectric phase transitions, due to the existence of two origins from the molecular chirality and spatial arrangement, whose contributions vary upon the transitions. The optical rotation switching effect may find applications in electro-optical elements.

  10. Thin layer composite unimorph ferroelectric driver and sensor

    NASA Technical Reports Server (NTRS)

    Hellbaum, Richard F. (Inventor); Bryant, Robert G. (Inventor); Fox, Robert L. (Inventor); Jalink, Jr., Antony (Inventor); Rohrbach, Wayne W. (Inventor); Simpson, Joycelyn O. (Inventor)

    2004-01-01

    A method for forming ferroelectric wafers is provided. A prestress layer is placed on the desired mold. A ferroelectric wafer is placed on top of the prestress layer. The layers are heated and then cooled, causing the ferroelectric wafer to become prestressed. The prestress layer may include reinforcing material and the ferroelectric wafer may include electrodes or electrode layers may be placed on either side of the ferroelectric layer. Wafers produced using this method have greatly improved output motion.

  11. Calligraphic Poling of Ferroelectric Material

    NASA Technical Reports Server (NTRS)

    Mohageg, Makan; Strekalov, Dmitry; Savchenkov, Anatoliy; Matsko, Adrey; Maleki, Lute; Iltchenko, Vladimir

    2007-01-01

    Calligraphic poling is a technique for generating an arbitrary, possibly complex pattern of localized reversal in the direction of permanent polarization in a wafer of LiNbO3 or other ferroelectric material. The technique is so named because it involves a writing process in which a sharp electrode tip is moved across a surface of the wafer to expose the wafer to a polarizing electric field in the desired pattern. The technique is implemented by use of an apparatus, denoted a calligraphic poling machine (CPM), that includes the electrode and other components as described in more detail below.

  12. High photovoltages in ferroelectric ceramics

    NASA Technical Reports Server (NTRS)

    Brody, P. S.

    1976-01-01

    The short-circuit currents and photo-emfs were measured for various ceramics including barium titanate, lead metaniobate, and lead titanate. It is suggested that the emfs and currents arise from the presence of photoconductor-insulator sandwiches in the presence of space-charge-produced internal fields. Results are in agreement with the proposed theory and indicate that the ferroelectric ceramics are not only producers of high-voltage photoelectricity but a photo-battery, the polarity and magnitude of which can be switched by application of an electrical signal.

  13. Negative capacitance in multidomain ferroelectric superlattices

    NASA Astrophysics Data System (ADS)

    Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'Yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-01

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  14. Negative capacitance in multidomain ferroelectric superlattices.

    PubMed

    Zubko, Pavlo; Wojdeł, Jacek C; Hadjimichael, Marios; Fernandez-Pena, Stéphanie; Sené, Anaïs; Luk'yanchuk, Igor; Triscone, Jean-Marc; Íñiguez, Jorge

    2016-06-23

    The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of their current applications, which range from the simple electric cigarette lighter to non-volatile random access memories. Research on nanoscale ferroelectrics reveals that their behaviour is profoundly different from that in bulk ferroelectrics, which could lead to new phenomena with potential for future devices. As ferroelectrics become thinner, maintaining a stable polarization becomes increasingly challenging. On the other hand, intentionally destabilizing this polarization can cause the effective electric permittivity of a ferroelectric to become negative, enabling it to behave as a negative capacitance when integrated in a heterostructure. Negative capacitance has been proposed as a way of overcoming fundamental limitations on the power consumption of field-effect transistors. However, experimental demonstrations of this phenomenon remain contentious. The prevalent interpretations based on homogeneous polarization models are difficult to reconcile with the expected strong tendency for domain formation, but the effect of domains on negative capacitance has received little attention. Here we report negative capacitance in a model system of multidomain ferroelectric-dielectric superlattices across a wide range of temperatures, in both the ferroelectric and paraelectric phases. Using a phenomenological model, we show that domain-wall motion not only gives rise to negative permittivity, but can also enhance, rather than limit, its temperature range. Our first-principles-based atomistic simulations provide detailed microscopic insight into the origin of this phenomenon, identifying the dominant contribution of near-interface layers and paving the way for its future exploitation.

  15. Ferroelectric Metal in Tetragonal BiCoO3/BiFeO3 Bilayers and Its Electric Field Effect

    PubMed Central

    Yin, Li; Mi, Wenbo; Wang, Xiaocha

    2016-01-01

    By first-principles calculations we investigate the electronic structure of tetragonal BiCoO3/BiFeO3 bilayers with different terminations. The multiferroic insulator BiCoO3 and BiFeO3 transform into metal in all of three models. Particularly, energetically favored model CoO2-BiO exhibits ferroelectric metallic properties, and external electric field enhances the ferroelectric displacements significantly. The metallic character is mainly associated to eg electrons, while t2g electrons are responsible for ferroelectric properties. Moreover, the strong hybridization between eg and O p electrons around Fermi level provides conditions to the coexistence of ferroelectric and metallic properties. These special behaviors of electrons are influenced by the interfacial electronic reconstruction with formed Bi-O electrovalent bond, which breaks OA-Fe/Co-OB coupling partially. Besides, the external electric field reverses spin polarization of Fe/Co ions efficiently, even reaching 100%. PMID:26839049

  16. Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias.

    PubMed

    Kasamatsu, Shusuke; Watanabe, Satoshi; Hwang, Cheol Seong; Han, Seungwu

    2016-01-13

    The emergence of negative capacitance in an ultrathin ferroelectric/paraelectric bilayer capacitor under electrical bias is examined using first-principles simulation. An antiferroelectric-like behavior is predicted, and negative capacitance is shown to emerge when the monodomain state becomes stable after bias application. The polydomain-monodomain transition is also shown to be a source of capacitance enhancement.

  17. Structural Consequences of Ferroelectric Nanolithography

    SciTech Connect

    J Young Jo; P Chen; R Sichel; S Bake; R Smith; N Balke; S Kalinin; M Holt; J Maser; et al.

    2011-12-31

    Domains of remnant polarization can be written into ferroelectrics with nanoscale precision using scanning probe nanolithography techniques such as piezoresponse force microscopy (PFM). Understanding the structural effects accompanying this process has been challenging due to the lack of appropriate structural characterization tools. Synchrotron X-ray nanodiffraction provides images of the domain structure written by PFM into an epitaxial Pb(Zr,Ti)O{sub 3} thin film and simultaneously reveals structural effects arising from the writing process. A coherent scattering simulation including the superposition of the beams simultaneously diffracted by multiple mosaic blocks provides an excellent fit to the observed diffraction patterns. Domains in which the polarization is reversed from the as-grown state have a strain of up to 0.1% representing the piezoelectric response to unscreened surface charges. An additional X-ray microdiffraction study of the photon-energy dependence of the difference in diffracted intensity between opposite polarization states shows that this contrast has a crystallographic origin. The sign and magnitude of the intensity contrast between domains of opposite polarization are consistent with the polarization expected from PFM images and with the writing of domains through the entire thickness of the ferroelectric layer. The strain induced by writing provides a significant additional contribution to the increased free energy of the written domain state with respect to a uniformly polarized state.

  18. Photorefractive effect in ferroelectric liquid crystals

    NASA Astrophysics Data System (ADS)

    Sasaki, Takeo; Naka, Yumiko

    2014-03-01

    In this paper, we review recent progress of research on the photorefractive effect of ferroelectric liquid crystals. The photorefractive effect is a phenomenon that forms a dynamic hologram in a material. The interference of two laser beams in a photorefractive material establishes a refractive index grating. This phenomenon is applicable to a wide range of devices related to diffraction optics including 3D displays, optical amplification, optical tomography, novelty filters, and phase conjugate wave generators. Ferroelectric liquid crystals are considered as a candidate for practical photorefractive materials. A refractive index grating formation time of 8-10 ms and a large gain coefficient are easily obtained in photorefractive ferroelectric liquid crystals.

  19. Ultrafast Photovoltaic Response in Ferroelectric Nanolayers

    SciTech Connect

    Daranciang, Dan

    2012-02-15

    We show that light drives large-amplitude structural changes in thin films of the prototypical ferroelectric PbTiO3 via direct coupling to its intrinsic photovoltaic response. Using time-resolved x-ray scattering to visualize atomic displacements on femtosecond timescales, photoinduced changes in the unit-cell tetragonality are observed. These are driven by the motion of photogenerated free charges within the ferroelectric and can be simply explained by a model including both shift and screening currents, associated with the displacement of electrons first antiparallel to and then parallel to the ferroelectric polarization direction.

  20. Static Characteristics of the Ferroelectric Transistor Inverter

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  1. Emergent ferroelectricity in disordered tri-color multilayer structure comprised of ferromagnetic manganites

    NASA Astrophysics Data System (ADS)

    Niu, Li-Wei; Chen, Chang-Le; Dong, Xiang-Lei; Xing, Hui; Luo, Bing-Cheng; Jin, Ke-Xin

    2016-10-01

    Multiferroic materials, showing the coexistence and coupling of ferroelectric and magnetic orders, are of great technological and fundamental importance. However, the limitation of single phase multiferroics with robust magnetization and polarization hinders the magnetoelectric effect from being applied practically. Magnetic frustration, which can induce ferroelectricity, gives rise to multiferroic behavior. In this paper, we attempt to construct an artificial magnetically frustrated structure comprised of manganites to induce ferroelectricity. A disordered stacking of manganites is expected to result in frustration at interfaces. We report here that a tri-color multilayer structure comprised of non-ferroelectric La0.9Ca0.1MnO3(A)/Pr0.85Ca0.15MnO3(B)/Pr0.85Sr0.15MnO3(C) layers with the disordered arrangement of ABC-ACB-CAB-CBA-BAC-BCA is prepared to form magnetoelectric multiferroics. The multilayer film exhibits evidence of ferroelectricity at room temperature, thus presenting a candidate for multiferroics. Project supported by the National Natural Science Foundation of China (Grant Nos. 61471301, 61078057, 51172183, 51402240, and 51471134), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20126102110045), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JQ5125), and the Fundamental Research Funds for the Central Universities, China (Grant No. 3102015ZY078).

  2. Ferroelectricity emerging in strained (111)-textured ZrO{sub 2} thin films

    SciTech Connect

    Fan, Zhen E-mail: msecj@nus.edu.sg; Deng, Jinyu; Liu, Ziyan; Xiao, Juanxiu; Yan, Xiaobing; Wang, John; Chen, Jingsheng E-mail: msecj@nus.edu.sg; Wang, Jingxian; Dong, Zhili; Yang, Ping

    2016-01-04

    (Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO{sub 2} thin films. Our theoretical analyses suggest that the strain imposed on the ZrO{sub 2} (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO{sub 2}, and the compressive strain along certain 〈11-2〉 directions may further stabilize the o-phase. Experimentally ZrO{sub 2} thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO{sub 2} thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO{sub 2} films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO{sub 2} films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.

  3. Antiferroelectric-to-Ferroelectric Switching in CH3NH3PbI3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Sewvandi, Galhenage A.; Hu, Dengwei; Chen, Changdong; Ma, Hao; Kusunose, Takafumi; Tanaka, Yasuhiro; Nakanishi, Shunsuke; Feng, Qi

    2016-08-01

    Perovskite solar cells (PSCs) often suffer from large performance variations which impede to define a clear charge-transfer mechanism. Ferroelectric polarization is measured numerically using CH3NH3PbI3 (M A PbI3 ) pellets to overcome the measurement issues such as pinholes and low uniformity of thickness, etc., with M A PbI3 thin films. M A PbI3 perovskite is an antiferroelectric semiconductor which is different from typical semiconducting materials and ferroelectric materials. The effect of polarization carrier separation on the charge-transfer mechanism in the PSCs is elucidated by using the results of ferroelectric and structural studies on the perovskite. The ferroelectric polarization contributes to an inherent carrier-separation effect and the I - V hysteresis. The ferroelectric and semiconducting synergistic charge-separation effect gives an alternative category of solar cells, ferroelectric semiconductor solar cells. Our findings identify the ferroelectric semiconducting behavior of the perovskite absorber as being significant to the improvement of the ferroelectric PSCs performances in future developments.

  4. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Lambers, Eric; Rudawski, Nicholas G.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2015-04-01

    Ferroelectric HfO2-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO2 thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO2 thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO2 thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  5. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei V.; Rodriguez, Brian J.; Jesse, Stephen; Karapetian, Edgar; Mirman, Boris; Eliseev, Eugene A.; Morozovska, Anna N.

    2007-08-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  6. Freedericksz transition in smectic-A liquid crystals doped by ferroelectric nanoparticles

    NASA Astrophysics Data System (ADS)

    Poursamad, J. B.; Hallaji, T.

    2017-01-01

    The structure, orientation and physical properties of liquid crystals is significantly affected by doping of ferroic (ferromagnetic and ferroelectric) nanoparticles into liquid crystals. Behavior of these suspensions in external fields depends on anchoring energy, volume fraction of doped nanoparticles, and sign of dielectric anisotropy of liquid crystals as well as relative orientation of director and local polarization of nanoparticles. Here, the threshold voltage for molecular reorientation (Freedericksz transition) is estimated theoretically in smectic-A liquid crystals doped by spherical ferroelectric nanoparticles, near the smectic-A to smectic-C transition temperature taking into account local electric field effects. It is shown that the threshold voltage is decreased by doping ferroelectric nanoparticles into liquid crystals.

  7. Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures

    NASA Astrophysics Data System (ADS)

    Jiang, Ran; Han, Zuyin; Sun, Weideng; Du, Xianghao; Wu, Zhengran; Jung, Hyung-Suk

    2015-10-01

    Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors when the samples under different gate polarities. At a negative voltage, a transmission modulation depth up to ˜74% was present without depending on the photo illumination power, whereas, at a positive voltage, the modulation of Thz wave shows dependence on the illumination power, which is ascribed to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO2 layer. Considering the good compatibility of HfO2 on Si-based semiconductor process, the ferroelectricity layer of Si:HfO2 may open up an avenue for the tunable modulation of Thz wave.

  8. Ferroelectric and electrical characterization of multiferroic BiFeO3 at the single nanoparticle level

    NASA Astrophysics Data System (ADS)

    Vasudevan, R. K.; Bogle, K. A.; Kumar, A.; Jesse, S.; Magaraggia, R.; Stamps, R.; Ogale, S. B.; Potdar, H. S.; Nagarajan, V.

    2011-12-01

    Ferroelectric BiFeO3 (BFO) nanoparticles deposited on epitaxial substrates of SrRuO3 (SRO) and La1-xSrxMnO3 (LSMO) were studied using band excitation piezoresponse spectroscopy (BEPS), piezoresponse force microscopy (PFM), and ferromagnetic resonance (FMR). BEPS confirms that the nanoparticles are ferroelectric in nature. Switching behavior of nanoparticle clusters were studied and showed evidence for inhomogeneous switching. The dimensionality of domains within nanoparticles was found to be fractal in nature, with a dimensionality constant of ˜1.4, on par with ferroelectric BFO thin-films under 100 nm in thickness. Ferromagnetic resonance studies indicate BFO nanoparticles only weakly affect the magnetic response of LSMO.

  9. Nanoscale Electromechanics of Ferroelectric and Biological Systems: A New Dimension in Scanning Probe Microscopy

    SciTech Connect

    Kalinin, Sergei V; Rodriguez, Brian J; Jesse, Stephen; Karapetian, Edgar; Mirman, B; Eliseev, E. A.; Morozovska, A. N.

    2007-01-01

    Functionality of biological and inorganic systems ranging from nonvolatile computer memories and microelectromechanical systems to electromotor proteins and cellular membranes is ultimately based on the intricate coupling between electrical and mechanical phenomena. In the past decade, piezoresponse force microscopy (PFM) has been established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric and piezoelectric materials. Here, we give an overview of the fundamental image formation mechanism in PFM and summarize recent theoretical and technological advances. In particular, we show that the signal formation in PFM is complementary to that in the scanning tunneling microscopy (STM) and atomic force microscopy (AFM) techniques, and we discuss the implications. We also consider the prospect of extending PFM beyond ferroelectric characterization for quantitative probing of electromechanical behavior in molecular and biological systems and high-resolution probing of static and dynamic polarization switching processes in low-dimensional ferroelectric materials and heterostructures.

  10. Dielectric properties of ferroelectric betaine phosphite crystals with a high degree of deuteration

    NASA Astrophysics Data System (ADS)

    Balashova, E. V.; Krichevtsov, B. B.; Yurko, E. I.; Svinarev, F. B.; Pankova, G. A.

    2015-12-01

    The dielectric properties of deuterated betaine phosphite crystals with a high degree of deuteration in the region of the antiferrodistorsive (at T = T c1) and ferroelectric (at T = T c2) phase transitions have been investigated. The temperature behavior of the dielectric permittivity of betaine phosphite and deuterated betaine phosphite has been described within the framework of the Landau thermodynamic model taking into account the biquadratic coupling between the polar order parameter of the ferroelectric transition and the nonpolar order parameter of the antiferrodistorsive phase transition. It has been shown that an increase in the degree of deuteration leads to a decrease in the coupling between the order parameters. An increase in the temperature of the ferroelectric phase transition due to the deuteration of betaine phosphite is caused by an increase in the dielectric permittivity in the symmetric phase above the temperature of the antiferrodistorsive phase transition.

  11. Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device

    NASA Astrophysics Data System (ADS)

    Nishitani, Yu; Kaneko, Yukihiro; Ueda, Michihito; Fujii, Eiji; Tsujimura, Ayumu

    2013-04-01

    A brain-like learning function was implemented in an electronic synapse device using a ferroelectric-gate field effect transistor (FeFET). The FeFET was a bottom-gate type FET with a ZnO channel and a ferroelectric Pb(Zr,Ti)O3 (PZT) gate insulator. The synaptic weight, which is represented by the channel conductance of the FeFET, is updated by applying a gate voltage through a change in the ferroelectric polarization in the PZT. A learning function based on the symmetric spike-timing dependent synaptic plasticity was implemented in the synapse device using the multilevel weight update by applying a pulse gate voltage. The dynamic weighting and learning behavior in the synapse device was observed as a change in the membrane potential in a spiking neuron circuit.

  12. Persistence of ferroelectricity above the Curie temperature at the surface of Pb (Z n1 /3N b2 /3)O3-12 %PbTi O3

    NASA Astrophysics Data System (ADS)

    Domingo, N.; Bagués, N.; Santiso, J.; Catalan, G.

    2015-03-01

    Relaxor-based ferroelectrics have been known for decades to possess a relatively thick surface layer ("skin") that is distinct from its interior. Yet while there is consensus about its existence, there are controversies about its symmetry, phase stability, and origin. In an attempt to clarify these issues, we have examined the surface layer of PZN-12%PT. While the bulk transitions from a ferroelastically twinned tetragonal ferroelectric state with in-plane polarization to a cubic paraphase at Tc=200 ∘C, the skin layer shows a robust labyrinthine nanodomain structure with out-of-plane polarization that persists hundreds of degrees above the bulk Curie temperature. Cross-sectional transmission electron microscopy analysis shows that the resilience of the skin's polarization is correlated with a compositional imbalance: lead vacancies at the surface are charge-compensated by niobium enrichment; the excess of N b 5 + —a small ion with d0 orbital occupancy—stabilizes the ferroelectricity of the skin layer.

  13. Characterization of a Common-Gate Amplifier Using Ferroelectric Transistors

    NASA Technical Reports Server (NTRS)

    Hunt, Mitchell; Sayyah, Rana; MacLeod, Todd C.; Ho, Fat D.

    2011-01-01

    In this paper, the empirical data collected through experiments performed using a FeFET in the common-gate amplifier circuit is presented. The FeFET common-gate amplifier was characterized by varying all parameters in the circuit, such as load resistance, biasing of the transistor, and input voltages. Due to the polarization of the ferroelectric layer, the particular behavior of the FeFET common-gate amplifier presents interesting results. Furthermore, the differences between a FeFET common-gate amplifier and a MOSFET common-gate amplifier are examined.

  14. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  15. Ferroelectric symmetry-protected multibit memory cell

    PubMed Central

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-01-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing. PMID:28176866

  16. Ferroelectricity in yttrium-doped hafnium oxide

    NASA Astrophysics Data System (ADS)

    Müller, J.; Schröder, U.; Böscke, T. S.; Müller, I.; Böttger, U.; Wilde, L.; Sundqvist, J.; Lemberger, M.; Kücher, P.; Mikolajick, T.; Frey, L.

    2011-12-01

    Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO1.5 in HfO2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO1.5 admixture the remanent polarization peaked at 24 μC/cm2 with a coercive field of about 1.2 MV/cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO2 implies high scaling potential for future, ferroelectric memories.

  17. Ferroelectric symmetry-protected multibit memory cell

    NASA Astrophysics Data System (ADS)

    Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

    2017-02-01

    The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

  18. Negative capacitance in a ferroelectric capacitor.

    PubMed

    Khan, Asif Islam; Chatterjee, Korok; Wang, Brian; Drapcho, Steven; You, Long; Serrao, Claudy; Bakaul, Saidur Rahman; Ramesh, Ramamoorthy; Salahuddin, Sayeef

    2015-02-01

    The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of a phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here, we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time--in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this 'inductance'-like behaviour from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

  19. Three perimeter effects in ferroelectric nanostructures

    NASA Astrophysics Data System (ADS)

    Ruediger, Andreas; Peter, Frank; Waser, Rainer

    2006-03-01

    As the lateral size of ferroelectric nanoislands is now well below 50 nm, the question of size effects becomes increasingly relevant. Three independent techniques provided data of pronounced ferroelectric features along the perimeter: impedance spectroscopy [1], piezoelectric force microscopy [2] and pyroelectric current sensing [3]. However, as we can show, all three observations are related to the measurement technique that interferes with the lateral confinement and still there is no direct evidence of a lateral size effect in ferroelectric nanostructures. We discuss some scenarios of further downscaling and possible consequences. [1]M.Dawber, D.J. Jung, J.F. Scott, “Perimeter effect in very small ferroelectrics“,Appl. Phys. Lett. 82, 436 (2003) [2 ]F. Peter, A. Ruediger, R. Dittmann, R. Waser, K. Szot, B. Reichenberg, K. Prume, “Analysis of shape effects on the piezoresponse in ferroelectric nanograins with and without adsorbates”, Applied Physics Letters, 87, 082901 (2005) [3] B.W. Peterson, S. Ducharme, V.M. Fridkin, “Mapping surface Polarization in thin films of the ferroelectric polymer P(VDF-TrFE)”,Ferroelectrics, 304, 51 (2004)

  20. Magnetic control of ferroelectric interfaces

    NASA Astrophysics Data System (ADS)

    Dussan, S.; Kumar, A.; Katiyar, R. S.; Priya, S.; Scott, J. F.

    2011-05-01

    We report the strong magnetic field dependence of ferroelectric PbZr0.52Ti0.48O3 (PZT) films on half-metallic oxide La0.67Sr0.33MnO3 (LSMO) electrodes. As the field H is increased, the hysteresis loop first broadens (becomes lossy) and then disappears at approximately H = 0.34 T and ambient temperatures. The data are compared with the theories of Pirč et al (2009 Phys. Rev. B 79 214114), Parish and Littlewood (2008 Phys. Rev. Lett. 101 166602) and Catalan (2006 Appl. Phys. Lett. 88 102902). The results are interpreted as due not to magnetocapacitance but to the sharp negative magnetoresistance in LSMO at low magnetic fields (Hwang et al 1996 Phys. Rev. Lett. 77 2041), which causes a dramatic increase in leakage current through the PZT.

  1. Investigation of the relaxor behavior of sol gel processed lanthanum lead titanium ceramics

    NASA Astrophysics Data System (ADS)

    Limame, K.; Sayouri, S.; Yahyaoui, M. M.; Housni, A.; Jaber, B.

    2016-08-01

    A series of La doped lead titanate samples, with composition Pb1-xLaxTi1-x/4O3 (PLTx), where x=0.00; 0.02; 0.04; 0.06; 0.07; 0.08; 0.10; 0.12; 0.14; 0.16; 0.18; 0.21 and 0.22 was prepared using the sol-gel process. Addition of La gives rise to the two well-known phenomena: diffuseness and relaxation around the ferro-to-paraelectric transition; the two parameters related to these phenomena, and which give a satisfactory interpretation of them, have been estimated using the Uchino's quadratic law. This diffuse phase transition (DPT) has been investigated with the help of the Landau-Devonshire cluster theory and the model of Cheng et al., to show that polar regions may be generated around the DPT and far from the temperature, Tm, of the maximum of the dielectric permittivity, which have as a direct consequence a non vanishing polarization even if T>Tm.

  2. Fully printed and flexible ferroelectric capacitors based on a ferroelectric polymer for pressure detection

    NASA Astrophysics Data System (ADS)

    Sekine, Tomohito; Sugano, Ryo; Tashiro, Tomoya; Fukuda, Kenjiro; Kumaki, Daisuke; Domingues Dos Santos, Fabrice; Miyabo, Atsushi; Tokito, Shizuo

    2016-10-01

    We report on the fabrication and demonstration of fully printed ferroelectric capacitors using poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)]. The printed ferroelectric capacitors were primarily fabricated by ink-jet printing on a thin plastic film substrate. The annealing process for the P(VDF-TrFE) layer was optimized from the viewpoints of surface morphology and crystallinity. A good ferroelectric polarization-electric field loop and piezoelectricity in the P(VDF-TrFE) were achieved for the printed ferroelectric capacitors. We have succeeded in the detection of a weak pressure of 150 mbar using the printed ferroelectric capacitor, which is an indication of a potential application to health-care biosensors. These results were realized by the optimization of the annealing temperature for the P(VDF-TrFE) layer.

  3. Effect of crystal structure and cationic order on phonon modes across ferroelectric phase transformation in Pb(Fe{sub 0.5-x}Sc{sub x}Nb{sub 0.5})O{sub 3} bulk ceramics

    SciTech Connect

    Mallesham, B.; Ranjith, R.; Viswanath, B.

    2016-01-15

    Pb(Fe{sub 0.5-x}Sc{sub x}Nb{sub 0.5})O{sub 3} [(PFSN) (0 ≤ x ≤ 0.5)] multiferroic relaxors were synthesized and the temperature dependence of phonon modes across ferroelectric to paraelectric transition was studied. With varying Sc content from x = 0 to 0.25 the structure remains monoclinic and with further addition (x = 0.3 - 0.5) the structure transforms into rhombohedral symmetry. Structural refinement studies showed that the change in crystal structure from monoclinic to rhombohedral symmetry involves a volume increment of 34-36%. Associated changes in the tolerance factor (1.024 ≤ t ≤ 0.976) and bond angles were observed. Structure assisted B′-B″ cation ordering was confirmed through the superlattice reflections in selected area electron diffraction (SAED) pattern of Pb(Sc{sub 0.5}Nb{sub 0.5})O{sub 3} (x = 0.5). Cation ordering is also evident from the evolution of Pb-O phonon mode in Raman spectra of compositions with rhombohedral symmetry (x ≥ 0.3). The high temperature Raman scattering studies show that the B-localized mode [F{sub 1u}, ∼250 cm{sup −1}] and BO{sub 6} octahedral rotational mode [F{sub 1g}, ∼200 cm{sup −1}], both originating from polar nano regions (PNRs) behave like coupled phonon modes in rhombohedral symmetry. However, in monoclinic symmetry they behave independently across the transition. Softening of B localized mode across the transition followed by the hardening for all compositions confirms the diffusive nature of the ferroelectric transformation. The presence of correlation between the B localized and BO{sub 6} rotational modes introduces a weak relaxor feature for systems with rhombohedral symmetry in PFSN ceramics, which was confirmed from the macroscopic dielectric studies.

  4. Ferroelectric and conductivity behavior of multilayered PbZr0.52Ti0.48O3/Pb(Mg1/3Ta2/3)0.7Ti0.3O3/PbZr0.52Ti0.48O3 thin films

    NASA Astrophysics Data System (ADS)

    Li, Fang; Zhou, Zhaohui; Wang, John

    2006-08-01

    Ferroelectric and impedance behavior of sandwich-structured PbZr0.52Ti0.48O3/Pb(Mg1/3Ta2/3)0.7Ti0.3O3/PbZr0.52Ti0.48O3 thin films was studied as a function of temperature (23-300°C ) and frequency (0.1-104Hz). A change in the controlling mechanism of the electrical behavior from grain interior to grain boundary occurred in the temperature range studied. A low-frequency dielectric relaxation was observed in the temperature range of 200-300°C, the activation energy of which was calculated to be 0.90eV. This suggests that oxygen vacancies are the most likely charge carriers at high temperatures. The change in fatigue behavior of the sandwich-structured thin film with temperature can be accounted for by the increased mobility of oxygen vacancies at elevated temperatures. Frequency dependent conductivities were analyzed with an augmented Jonscher relation. The activation energies for dc conductivity and hopping frequency were calculated to be 0.90 and 0.89eV, respectively.

  5. THE FERROELECTRIC AND STRUCTURAL PROPERTIES OF HAFNIUM OXIDE COMPOUNDS,

    DTIC Science & Technology

    HAFNIUM COMPOUNDS, OXIDES), (* FERROELECTRICITY , HAFNIUM COMPOUNDS), (*CRYSTAL STRUCTURE, HAFNIUM COMPOUNDS), DIELECTRIC PROPERTIES, HYSTERESIS... FERROELECTRIC MATERIALS, SOLID SOLUTIONS, X RAY DIFFRACTION, CRYSTAL LATTICES, LOW TEMPERATURE, CALCIUM COMPOUNDS, STRONTIUM COMPOUNDS, LEAD COMPOUNDS, BARIUM COMPOUNDS

  6. INVESTIGATION OF A COMPOUND REPORTED AS BOTH FERRIMAGNETIC AND FERROELECTRIC,

    DTIC Science & Technology

    FERRITES , *FERROELECTRIC CRYSTALS, MAGNETIC PROPERTIES, X RAY DIFFRACTION, IMPURITIES, FERROELECTRICITY, FERROMAGNETISM, CRYSTAL STRUCTURE...DIELECTRIC PROPERTIES, MICROSCOPY, BARIUM COMPOUNDS, SAMARIUM COMPOUNDS, NIOBIUM COMPOUNDS, TITANIUM COMPOUNDS, TITANATES, PHOTOMICROGRAPHY, CRYSTAL LATTICES, OXIDES.

  7. Ferroelectric-ferromagnetic multilayers: A magnetoelectric heterostructure with high output charge signal

    SciTech Connect

    Prokhorenko, S.; Kohlstedt, H.; Pertsev, N. A.

    2014-09-21

    Multiferroic composites and heterostructures comprising ferroelectric and ferromagnetic materials exhibit room-temperature magnetoelectric (ME) effects greatly exceeding those of single-phase magnetoelectrics known to date. Since these effects are mediated by the interfacial coupling between ferroic constituents, the ME responses may be enhanced by increasing the density of interfaces and improving their quality. A promising material system providing these features is a ferroelectric-ferromagnetic multilayer with epitaxial interfaces. In this paper, we describe theoretically the strain-mediated direct ME effect exhibited by free-standing multilayers composed of single-crystalline ferroelectric nanolayers interleaved by conducting ferromagnetic slabs. Using a nonlinear thermodynamic approach allowing for specific mechanical boundary conditions of the problem, we first calculate the polarization states and dielectric properties of ferroelectric nanolayers in dependence on the lattice mismatch between ferroic constituents and their volume fractions. In these calculations, the ferromagnetic component is described by a model which combines linear elastic behavior with magnetic-field-dependent lattice parameters. Then the quasistatic ME polarization and voltage coefficients are evaluated using the theoretical strain sensitivity of ferroelectric polarization and measured effective piezomagnetic coefficients of ferromagnets. For Pb(Zr₀.₅Ti₀.₅)O₃-FeGaB and BaTiO₃-FeGaB multilayers, the ME coefficients are calculated numerically as a function of the FeGaB volume fraction and used to evaluate the output charge and voltage signals. It is shown that the multilayer geometry of a ferroelectric-ferromagnetic nanocomposite opens the way for a drastic enhancement of the output charge signal. This feature makes biferroic multilayers advantageous for the development of ultrasensitive magnetic-field sensors for technical and biomedical applications.

  8. Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

    DOE PAGES

    Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan; ...

    2016-07-05

    Ferroelectric materials are well-suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro-optic devices, and non-volatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a non-centrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change of properties withmore » decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, while in bulk ceramics, changes in properties from the values of large-grained specimens is most notable in samples with grain sizes below several microns. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics are reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. Ultimately, in many cases, multiple mechanisms combine to produce the observed scaling

  9. Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

    SciTech Connect

    Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan; Jones, Jacob L.; Maria, Jon-Paul; Trolier-McKinstry, Susan

    2016-07-05

    Ferroelectric materials are well-suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro-optic devices, and non-volatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a non-centrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change of properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, while in bulk ceramics, changes in properties from the values of large-grained specimens is most notable in samples with grain sizes below several microns. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics are reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. Ultimately, in many cases, multiple mechanisms combine to produce the observed scaling effects.

  10. Ferroelectric and ferromagnetic properties in BaTiO{sub 3} thin films on Si (100)

    SciTech Connect

    Singamaneni, Srinivasa Rao Prater, John T.; Punugupati, Sandhyarani; Hunte, Frank; Narayan, Jagdish

    2014-09-07

    In this paper, we report on the epitaxial integration of room temperature lead-free ferroelectric BaTiO{sub 3} thin (∼1050 nm) films on Si (100) substrates by pulsed laser deposition technique through a domain matching epitaxy paradigm. We employed MgO and TiN as buffer layers to create BaTiO{sub 3}/SrRuO{sub 3}/MgO/TiN/Si (100) heterostructures. C-axis oriented and cube-on-cube epitaxial BaTiO{sub 3} is formed on Si (100) as evidenced by the in-plane and out-of-plane x-ray diffraction, and transmission electron microscopy. X-ray photoemission spectroscopic measurements show that Ti is in 4(+) state. Polarization hysteresis measurements together with Raman spectroscopy and temperature-dependent x-ray diffraction confirm the room temperature ferroelectric nature of BaTiO{sub 3}. Furthermore, laser irradiation of BaTiO{sub 3} thin film is found to induce ferromagnetic-like behavior but affects adversely the ferroelectric characteristics. Laser irradiation induced ferromagnetic properties seem to originate from the creation of oxygen vacancies, whereas the pristine BaTiO{sub 3} shows diamagnetic behavior, as expected. This work has opened up the route for the integration of room temperature lead-free ferroelectric functional oxides on a silicon platform.

  11. Strong anisotropy of ferroelectricity in lead-free bismuth silicate

    NASA Astrophysics Data System (ADS)

    Seol, Daehee; Taniguchi, Hiroki; Hwang, Jae-Yeol; Itoh, Mitsuru; Shin, Hyunjung; Kim, Sung Wng; Kim, Yunseok

    2015-07-01

    Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies.Bismuth silicate (Bi2SiO5) was recently suggested as a potential silicate based lead-free ferroelectric material. Here, we show the existence of ferroelectricity and explore the strong anisotropy of local ferroelectricity using piezoresponse force microscopy (PFM). Domain structures are reconstructed using angle-resolved PFM. Furthermore, piezoresponse hysteresis loops and piezoelectric coefficients are spatially investigated at the nanoscale. The obtained results confirm the existence of ferroelectricity with strong c-axis polarization. These results could provide basic information on the anisotropic ferroelectricity in Bi2SiO5 and furthermore suggest its considerable potential for lead-free ferroelectric applications with silicon technologies. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03161c

  12. Ferroelectric Thin-Film Capacitors As Ultraviolet Detectors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita

    1995-01-01

    Advantages include rapid response, solar blindness, and relative invulnerability to ionizing radiation. Ferroelectric capacitor made to function as photovoltaic detector of ultraviolet photons by making one of its electrodes semitransparent. Photovoltaic effect exploited more fully by making Schottky barrier at illuminated semitransparent-electrode/ferroelectric interface taller than Schottky barrier at other electrode/ferroelectric interface.

  13. Room temperature p-type conductivity and coexistence of ferroelectric order in ferromagnetic Li doped ZnO nanoparticles

    SciTech Connect

    Awan, Saif Ullah E-mail: ullahphy@gmail.com; Hasanain, S. K.; Anjum, D. H.; Awan, M. S.; Shah, Saqlain A.

    2014-10-28

    Memory and switching devices acquired new materials which exhibit ferroelectric and ferromagnetic order simultaneously. We reported multiferroic behavior in Zn{sub 1−y}Li{sub y}O(0.00≤y≤0.10) nanoparticles. The analysis of transmission electron micrographs confirmed the hexagonal morphology and wurtzite crystalline structure. We investigated p-type conductivity in doped samples and measured hole carriers in range 2.4 × 10{sup 17}/cc to 7.3 × 10{sup 17}/cc for different Li contents. We found that hole carriers are responsible for long range order ferromagnetic coupling in Li doped samples. Room temperature ferroelectric hysteresis loops were observed in 8% and 10% Li doped samples. We demonstrated ferroelectric coercivity (remnant polarization) 2.5 kV/cm (0.11 μC/cm{sup 2}) and 2.8 kV/cm (0.15 μC/cm{sup 2}) for y = 0.08 and y = 0.10 samples. We propose that the mechanism of Li induced ferroelectricity in ZnO is due to indirect dipole interaction via hole carriers. We investigated that if the sample has hole carriers ≥5.3 × 10{sup 17}/cc, they can mediate the ferroelectricity. Ferroelectric and ferromagnetic measurements showed that higher electric polarization and larger magnetic moment is attained when the hole concentration is larger and vice versa. Our results confirmed the hole dependent coexistence of ferromagnetic and ferroelectric behavior at room temperature, which provide potential applications for switchable and memory devices.

  14. Strain-Induced Ferroelectric Topological Insulator.

    PubMed

    Liu, Shi; Kim, Youngkuk; Tan, Liang Z; Rappe, Andrew M

    2016-03-09

    Ferroelectricity and band topology are two extensively studied yet distinct properties of insulators. Nonetheless, their coexistence has never been observed in a single material. Using first-principles calculations, we demonstrate that a noncentrosymmetric perovskite structure of CsPbI3 allows for the simultaneous presence of ferroelectric and topological orders with appropriate strain engineering. Metallic topological surface states create an intrinsic short-circuit condition, helping stabilize bulk polarization. Exploring diverse structural phases of CsPbI3 under pressure, we identify that the key structural feature for achieving a ferroelectric topological insulator is to suppress PbI6 cage rotation in the perovskite structure, which could be obtained via strain engineering. Ferroelectric control over the density of topological surface states provides a new paradigm for device engineering, such as perfect-focusing Veselago lens and spin-selective electron collimator. Our results suggest that CsPbI3 is a simple model system for ferroelectric topological insulators, enabling future studies exploring the interplay between conventional symmetry-breaking and topological orders and their novel applications in electronics and spintronics.

  15. Ferroelectric HfO2-based materials for next-generation ferroelectric memories

    NASA Astrophysics Data System (ADS)

    Fan, Zhen; Chen, Jingsheng; Wang, John

    2016-05-01

    Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

  16. PREFACE: 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity and 9th International Conference on Functional Materials and Nanotechnologies (RCBJSF-2014-FM&NT)

    NASA Astrophysics Data System (ADS)

    Sternberg, Andris; Grinberga, Liga; Sarakovskis, Anatolijs; Rutkis, Martins

    2015-03-01

    The joint International Symposium RCBJSF-2014-FM&NT successfully has united two international events - 12th Russia/CIS/Baltic/Japan Symposium on Ferroelectricity (RCBJSF-12) and 9th International Conference Functional Materials and Nanotechnologies (FM&NT-2014). The RCBJSF symposium is a continuation of series of meetings on ferroelectricity, the first of which took place in Novosibirsk (USSR) in 1976. FM&NT conferences started in 2006 and have been organized by Institute of Solid State Physics, University of Latvia in Riga. In 2012 the International program committee decided to transform this conference into a traveling Baltic State conference and the FM&NT-2013 was organized by the Institute of Physics, University of Tartu, Estonia. In 2014 the joint international symposium RCBJSF-2014-FM&NT was organized by the Institute of Solid State Physics, University of Latvia and was part of Riga - 2014, the European Capital of Culture event. The purpose of the joint Symposium was to bring together scientists, students and high-level experts in solid state physics, materials science, engineering and related disciplines. The number of the registered participants from 26 countries was over 350. During the Symposium 128 high quality scientific talks (5 plenary, 42 invited, 81 oral) and over 215 posters were presented. All presentations were divided into 4 parallel sessions according to 4 main topics of the Symposium: Ferroelectricity, including ferroelectrics and multiferroics, pyroelectrics, piezoelectrics and actuators, integrated ferroelectrics, relaxors, phase transitions and critical phenomena. Multifunctional Materials, including theory, multiscale and multiphenomenal material modeling and simulation, advanced inorganic, organic and hybrid materials. Nanotechnologies, including progressive methods, technologies and design for production, investigation of nano- particles, composites, structures, thin films and coatings. Energy, including perspective materials and

  17. Development and characterization of a ferroelectric non-volatile memory for flexible electronics

    NASA Astrophysics Data System (ADS)

    Mao, Duo

    Flexible electronics have received significant attention recently because of the potential applications in displays, sensors, radio frequency identification (RFID) tags and other integrated circuits. Electrically addressable non-volatile memory is a key component for these applications. The major challenges are to fabricate the memory at a low temperature compatible with plastic substrates while maintaining good device reliability, by being compatible with process as needed to integrate with other electronic components for system-on-chip applications. In this work, ferroelectric capacitors fabricated at low temperature were developed. Based on that, a ferroelectric random access memory (FRAM) for flexible electronics was developed and characterized. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer was used as a ferroelectric material and a photolithographic process was developed to fabricate ferroelectric capacitors. Different characterization methods including atomic force microscopy, x-ray diffraction and Fourier-transform infrared reflection-absorption spectroscopy were used to study the material properties of the P(VDF-TrFE) film. The material properties were correlated with the electrical characteristics of the ferroelectric capacitors. To understand the polarization switching behavior of the P(VDF-TrFE) ferroelectric capacitors, a Nucleation-Limited-Switching (NLS) model was used to study the switching kinetics. The switching kinetics were characterized over the temperature range from -60 °C to 100 °C. Fatigue characteristics were studied at different electrical stress voltages and frequencies to evaluate the reliability of the ferroelectric capacitor. The degradation mechanism is attributed to the increase of the activation field and the suppression of the switchable polarization. To develop a FRAM circuit for flexible electronics, an n-channel thin film transistor (TFT) based on CdS as the semiconductor was integrated with a P

  18. Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Ho, Fat D.

    2004-01-01

    A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

  19. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    NASA Astrophysics Data System (ADS)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  20. Uncooled monolithic ferroelectric IRFPA technology

    NASA Astrophysics Data System (ADS)

    Belcher, James F.; Hanson, Charles M.; Beratan, Howard R.; Udayakumar, K. R.; Soch, Kevin L.

    1998-10-01

    Once relegated to expensive military platforms, occasionally to civilian platforms, and envisioned for individual soldiers, uncooled thermal imaging affords cost-effective solutions for police cars, commercial surveillance, driving aids, and a variety of other industrial and consumer applications. System prices are continuing to drop, and swelling production volume will soon drive prices substantially lower. The impetus for further development is to improve performance. Hybrid barium strontium titanate (BST) detectors currently in production are relatively inexpensive, but have limited potential for improved performance. The MTF at high frequencies is limited by thermal conduction through the optical coating. Microbolometer arrays in development at Raytheon have recently demonstrated performance superior to hybrid detectors. However, microbolometer technology lacks a mature, low-cost system technology and an abundance of upgradable, deployable system implementations. Thin-film ferroelectric (TFFE) detectors have all the performance potential of microbolometers. They are also compatible with numerous fielded and planned system implementations. Like the resistive microbolometer, the TFFE detector is monolithic; i.e., the detector material is deposited directly on the readout IC rather than being bump bonded to it. Imaging arrays of 240 X 320 pixels have been produced, demonstrating the feasibility of the technology.

  1. Deaging and Asymmetric Energy Landscapes in Electrically Biased Ferroelectrics

    SciTech Connect

    Tutuncu, Goknur; Damjanovic, Dragan; Chen, Jun; Jones, Jacob L.

    2015-09-01

    In ferroic materials, the dielectric, piezoelectric, magnetic, and elastic coefficients are significantly affected by the motion of domain walls. This motion can be described as the propagation of a wall across various types and strengths of pinning centers that collectively constitute a force profile or energetic landscape. Biased domain structures and asymmetric energy landscapes can be created through application of high fields (such as during electrical poling), and the material behavior in such states is often highly asymmetric. In some cases, this behavior can be considered as the electric analogue to the Bauschinger effect. The present Letter uses time-resolved, high-energy x-ray Bragg scattering to probe this asymmetry and the associated deaging effect in the ferroelectric morphotropic phase boundary composition 0.36BiScO{sub 3}-0.64PbTiO{sub 3}.

  2. Deaging and asymmetric energy landscapes in electrically biased ferroelectrics.

    PubMed

    Tutuncu, Goknur; Damjanovic, Dragan; Chen, Jun; Jones, Jacob L

    2012-04-27

    In ferroic materials, the dielectric, piezoelectric, magnetic, and elastic coefficients are significantly affected by the motion of domain walls. This motion can be described as the propagation of a wall across various types and strengths of pinning centers that collectively constitute a force profile or energetic landscape. Biased domain structures and asymmetric energy landscapes can be created through application of high fields (such as during electrical poling), and the material behavior in such states is often highly asymmetric. In some cases, this behavior can be considered as the electric analogue to the Bauschinger effect. The present Letter uses time-resolved, high-energy x-ray Bragg scattering to probe this asymmetry and the associated deaging effect in the ferroelectric morphotropic phase boundary composition 0.36BiScO3 - 0.64PbTiO3.

  3. Temperature-dependent phonon Raman scattering and spectroscopic ellipsometry of pure and Ca-doped Sr x Ba1-x Nb2O6 ferroelectric ceramics across the phase transition region

    NASA Astrophysics Data System (ADS)

    Peng, Liang; Jiang, Kai; Zhang, Jinzhong; Hu, Zhigao; Wang, Genshui; Dong, Xianlin; Chu, Junhao

    2016-01-01

    Optical phonons and the phase transition of relaxor ferroelectric ceramics Sr x Ba1-x Nb2O6 (SBN) and Ca y (Sr0.5Ba0.5)1-y Nb2O6 (CSBN) with different composition (0.3≤slant x≤slant 0.5 , 0.1≤slant y≤slant 0.2 ) have been investigated by variable-temperature Raman scattering and spectroscopic ellipsometry. The anomalous temperature dependence of Tauc gap energy (E t ) is used to fit the phonon energy dependence of the permittivity, and the Raman intensity of some interesting optical phonons can be ascribed to the phase transition from a ferroelectric to a paraelectric structure. The Curie temperature of SBN decreases from 556 to 359 K with increasing Sr composition, which can be attributed to the substitution of smaller Sr2+ for Ba2+. On increasing the Ca composition, however, the phase transition temperature of CSBN remains nearly unchanged at about 350 K. This could be due to the fact that most doped Ca2+ ions move into the oxygen ion site and exhibit no obvious effect on the vibrational properties. Therefore, the general disorder which results from Sr2+ substituting Ba2+ , dominates the phase transition process for SBN-based ferroelectric oxides. Meanwhile, the dielectric functions from 200 to 600 K have been evaluated with the aid of the Tauc-Lorentz model. The electronic transition is located at about 5 eV and decreases with increasing temperature for all the samples. Moreover, the phase transition temperature range derived from the spectroscopic ellipsometry agrees well with that from the Raman scattering. It reveals that the variation of the fundamental energy gap may be associated with the phase transition of SBN ceramics. Both Raman scattering and spectroscopic ellipsometry are proven to be a effective method of exploring the phase transition of ferroelectric oxides.

  4. Dynamical mechanism of phase transitions in A-site ferroelectric relaxor (Na1/2Bi1/2)TiO3

    NASA Astrophysics Data System (ADS)

    Deng, Guochu; Danilkin, Sergey; Zhang, Haiwu; Imperia, Paolo; Li, Xiaobing; Zhao, Xiangyong; Luo, Haosu

    2014-10-01

    The dynamical phase transition mechanism of (Na1/2Bi1/2)TiO3 (NBT) was studied using inelastic neutron scattering. Softening was observed of multiple phonon modes in the phase transition sequence of NBT. As usual, the softening of the zone center transverse optical modes Δ5 and Σ3 was observed in the (200) and (220) zones, showing the Ti vibration instabilities in TiO6 octahedra for both cubic-tetragonal (C-T) and tetragonal-rhombohedral (T-R) phase transitions. In these two phase transitions, however, Ti4+ has different preferential displacement directions. Surprisingly, the longitudinal optic mode also softens significantly toward the zone center in the range of the transition temperature, indicating the Na+/Bi3+ vibration instability against TiO6 octahedra during the T-R phase transition. Strong inelastic diffuse scattering shows up near M(1.5, 0.5, 0) and R(1.5, 1.5, 0.5) in the tetragonal and rhombohedral phases, respectively, indicating the condensations of the M3 and R25 optic modes for the corresponding transitions. This reveals the different rotation instabilities of TiO6 in the corresponding transition temperature range. Bottleneck or waterfall features were observed in the dispersion curves at certain temperatures but did not show close correlations to the formation of polar nanoregions. Additional instabilities could be the origin of the complexity of phase transitions and crystallographic structures in NBT.

  5. Short range magnetic exchange interaction favors ferroelectricity

    PubMed Central

    Wan, Xiangang; Ding, Hang-Chen; Savrasov, Sergey Y.; Duan, Chun-Gang

    2016-01-01

    Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science. To search multiferroics, currently most researches are focused on frustrated magnets, which usually have complicated magnetic structure and low magnetic ordering temperature. Here, we argue that actually simple interatomic magnetic exchange interaction already contains a driving force for ferroelectricity, thus providing a new microscopic mechanism for the coexistence and strong coupling between ferroelectricity and magnetism. We demonstrate this mechanism by showing that even the simplest antiferromagnetic insulator like MnO, could display a magnetically induced ferroelectricity under a biaxial strain. In addition, we show that such mechanism also exists in the most important single phase multiferroics, i.e. BiFeO3, suggesting that this mechanism is ubiquitous in systems with superexchange interaction. PMID:26956480

  6. Permanent ferroelectric retention of BiFeO3 mesocrystal

    PubMed Central

    Hsieh, Ying-Hui; Xue, Fei; Yang, Tiannan; Liu, Heng-Jui; Zhu, Yuanmin; Chen, Yi-Chun; Zhan, Qian; Duan, Chun-Gang; Chen, Long-Qing; He, Qing; Chu, Ying-Hao

    2016-01-01

    Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal. PMID:27782123

  7. Piezoelectricity and ferroelectricity of cellular polypropylene electrets films characterized by piezoresponse force microscopy

    SciTech Connect

    Miao, Hongchen; Sun, Yao; Zhou, Xilong; Li, Yingwei; Li, Faxin

    2014-08-14

    Cellular electrets polymer is a new ferroelectret material exhibiting large piezoelectricity and has attracted considerable attentions in researches and industries. Property characterization is very important for this material and current investigations are mostly on macroscopic properties. In this work, we conduct nanoscale piezoelectric and ferroelectric characterizations of cellular polypropylene (PP) films using piezoresponse force microscopy (PFM). First, both the single-frequency PFM and dual-frequency resonance-tracking PFM testings were conducted on the cellular PP film. The localized piezoelectric constant d{sub 33} is estimated to be 7–11pC/N by correcting the resonance magnification with quality factor and it is about one order lower than the macroscopic value. Next, using the switching spectroscopy PFM (SS-PFM), we studied polarization switching behavior of the cellular PP films. Results show that it exhibits the typical ferroelectric-like phase hysteresis loops and butterfly-shaped amplitude loops, which is similar to that of a poly(vinylidene fluoride) (PVDF) ferroelectric polymer film. However, both the phase and amplitude loops of the PP film are intensively asymmetric, which is thought to be caused by the nonzero remnant polarization after poling. Then, the D-E hysteresis loops of both the cellular PP film and PVDF film were measured by using the same wave form as that used in the SS-PFM, and the results show significant differences. Finally, we suggest that the ferroelectric-like behavior of cellular electrets films should be distinguished from that of typical ferroelectrics, both macroscopically and microscopically.

  8. Piezoelectricity and ferroelectricity of cellular polypropylene electrets films characterized by piezoresponse force microscopy

    NASA Astrophysics Data System (ADS)

    Miao, Hongchen; Sun, Yao; Zhou, Xilong; Li, Yingwei; Li, Faxin

    2014-08-01

    Cellular electrets polymer is a new ferroelectret material exhibiting large piezoelectricity and has attracted considerable attentions in researches and industries. Property characterization is very important for this material and current investigations are mostly on macroscopic properties. In this work, we conduct nanoscale piezoelectric and ferroelectric characterizations of cellular polypropylene (PP) films using piezoresponse force microscopy (PFM). First, both the single-frequency PFM and dual-frequency resonance-tracking PFM testings were conducted on the cellular PP film. The localized piezoelectric constant d33 is estimated to be 7-11pC/N by correcting the resonance magnification with quality factor and it is about one order lower than the macroscopic value. Next, using the switching spectroscopy PFM (SS-PFM), we studied polarization switching behavior of the cellular PP films. Results show that it exhibits the typical ferroelectric-like phase hysteresis loops and butterfly-shaped amplitude loops, which is similar to that of a poly(vinylidene fluoride) (PVDF) ferroelectric polymer film. However, both the phase and amplitude loops of the PP film are intensively asymmetric, which is thought to be caused by the nonzero remnant polarization after poling. Then, the D-E hysteresis loops of both the cellular PP film and PVDF film were measured by using the same wave form as that used in the SS-PFM, and the results show significant differences. Finally, we suggest that the ferroelectric-like behavior of cellular electrets films should be distinguished from that of typical ferroelectrics, both macroscopically and microscopically.

  9. Ferroelectric Properties of Ultrathin Perovskite Heterostructures.

    NASA Astrophysics Data System (ADS)

    Junquera, Javier

    2004-03-01

    Due to their switchable spontaneous polarization, ferroelectric thin films can be used in non-volatile ferroelectric random access memories (FeRAMs). Recently, 30 Gbit/cm^2 data storage densities have been demonstrated for Pb(Zr_0.2Ti_0.8)O3 films on a metallic oxide electrode (T. Tybell et al.), Phys. Rev. Lett. 89, 097601 (2002). While industry's demands for ultrahigh density information storage imposes a reduction of the cell-sizes and thicknesses of the ferroelectric thin films, fundamental questions concerning thickness dependence of ferroelectricity and related properties becomes crucial. Using a first-principles density-functional-theory approach (J. M. Soler et al.), J. Phys.: Condens. Matter 14, 2745 (2002) we have simulated the behaviour at 0 K of a typical ferroelectric capacitor epitaxially grown on a SrTiO3 substrate and made of an ultrathin film of BaTiO3 in between two SrRuO3 electrodes in short circuit (J. Junquera and Ph. Ghosez, Nature 422), 506 (2003). Both the electrical and the mechanical boundary conditions were properly considered in the calculations. We predict the existence of a critical thickness for ferroelectricity of about six unit cells (26 Ang), and relate it to an incomplete screening of the depolarizing field by real metallic electrodes. Transposing these ideas into a first-principles-based model Hamiltonian, (U. V. Waghmare and K. M. Rabe, Phys. Rev. B 55), 6161 (1997) and using Monte Carlo simulations, we have analyzed the temperature dependence of the thickness evolution of the polarization and tetragonality of the samples, as well as the piezoelectric and dielectric tensors. Our theoretical results show good agreement with very recent experimental measurements.

  10. Fatigue and hysteresis modeling of ferroelectric materials

    NASA Astrophysics Data System (ADS)

    Yoo, In. K.; Desu, Seshu B.

    1993-10-01

    Due to their nonlinear properties, ferroelectric materials are ideal candidates for smart materials. Degradation properties such as low voltage breakdown, fatigue, and aging have been major problems in commercial applications of these materials. Such degradations affect the lifetime of ferroelectric materials. Therefore, it is important to understand degradation for reliability improvement. In this article, recent studies on fatigue and hysteresis of ferroelectric ceramics such as Lead Zirconate Titanate (PZT) thin films is reviewed. A new fatigue model is discussed in detail which is based on effective one-directional movement of defects by internal field difference, defect entrapment at the ferroelectrics-electrode interface, and resultant polarization loss at the interface. A fatigue equation derived from this model is presented. Fatigue parameters such as initial polarization, piling constant, and decay constant are defined from the fatigue equation and voltage and temperature dependence of fatigue parameters are discussed. The jump distance of defect calculated from voltage dependence of the decay constant is close to the lattice constant of ferroelectric materials, which implies that oxygen or lead vacancies migrate either parallel or antiparallel to the polarization direction. From the temperature dependence of the decay constant, it is shown that the activation energy for domain wall movement plays an important role in fatigue. The hysteresis model of ferroelectrics is shown using polarization reversal. The hysteresis loop is made by four polarization stages: nucleation, growth, merging, and shrinkage of domains. The hysteresis equation confirms that dielectric viscosity controls hysteresis properties, and temperature dependence of the coefficient of dielectric viscosity is also discussed in conjunction with fatigue mechanism.

  11. Large electrostrictive effect in (Ba1-xGd2x/3)Zr0.3Ti0.7O3 relaxor towards moderate field actuator and energy storage applications

    NASA Astrophysics Data System (ADS)

    Ghosh, S. K.; Saha, Sujoy; Sinha, T. P.; Rout, S. K.

    2016-11-01

    The need of lead-free high performance ceramics with large electrostrictive effect, minimum hysteresis loss and energy storage ability at room temperature has become indispensable. At room temperature one of the key challenges in ceramic materials is to enhance the electrostrictive and energy storage properties simultaneously. In this regards, lead-free gadolinium modified barium zirconate titanate (Ba1-xGd2x/3)(Zr0.3Ti0.7)O3 (x = 0.02, 0.04, 0.06, 0.08, 0.10) ceramic was experimentally investigated to gain the competent electromechanical parameters near room temperature. Dielectric measurements exhibit a diffuse type of phase transition of relaxor phenomena and slim hysteresis loop with low remnant polarization and low hysteresis loss were observed. A moderate electric field of 30 kV/cm, recoverable energy and storage efficiency increases with Gd content. Strain-electric field hysteresis curves such as S-E, S-E2, and S-P2 profiles indicate improved electrostrictive characteristic of the ceramics. Results show that a maximum strain S ˜ 0.083% with large electrostrictive coefficient Q11 ˜ 0.054 m4/C2 and M11 ˜ 0.142 × 10-16 m2/V2 were obtained for x = 0.02 based BGdZT composition near relaxor-paraelectric phase boundary. The behavior of electrostrictive effect and energy storage efficiency suggested new possibilities of high precision lead-free ceramic actuator in a moderate field.

  12. Studies on grain-boundary effects of ferroelectric polycrystals

    NASA Astrophysics Data System (ADS)

    Jayabal, K.; Arockiarajan, A.; Sivakumar, S. M.; Sansour, C.

    2008-07-01

    The aim of this paper is to study the nonlinear dissipative effects of ferroelectric polycrystals based on firm thermodynamics principles. The developed micro-mechanically motivated model is embedded into an electromechanically coupled finite element formulation. In this framework, each domain is represented by a single finite element, and initial dipole directions are randomly oriented so that the virgin state of the particular bulk ceramics of interest reflects an un-poled material. Thermodynamically consistent energy criterion based on Gibbs free energy is adopted for the initiation of domain switching processes. The so-called grain-boundary effects, that is the constraint imposed by the surrounding grains on a grain at its boundary is incorporated in this model by means of micro-macromechanically motivated concept. In the expression for the driving force, an additional term is incorporated based on the change in Gibbs free energy of the neighboring grains for the particular switching domain/grain of interest. To study the overall bulk ceramics behavior, straightforward volume averaging techniques are applied. The simulated numerical results show appreciable improvement in modeling the nonlinear response for ferroelectrics subjected to various loading aspects compared with the experimental data from the literature.

  13. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.

  14. Intelligent Processing of Ferroelectric Thin Films

    DTIC Science & Technology

    1994-05-31

    Review," Ferroelectrics, 75, 25(1987) be determined by the compensator. With the PLZT phase modulator, the above (3] H. Higashino , T. Kawaguchi, H...Phys. Lett. 42(1983)867 4. F. Wang and G. Haertling, Appl. Phys. Lett. 63(1993)1730 5. H. Higashino et al, Japan. J. Appi. Phys. Vol. 24(1985...Single Crystals," Phza.JRev. 97, 414(1991) 1585(1965) (2] D. Bonsurant and F. Gnadinger, "Ferroelectrics for [10] H. Higashino , T. Kawaguchi, H. Adachi, T

  15. Switching Characteristics of Ferroelectric Transistor Inverters

    NASA Technical Reports Server (NTRS)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  16. Ferroelectric Cathodes in Transverse Magnetic Fields

    SciTech Connect

    Alexander Dunaevsky; Yevgeny Raitses; Nathaniel J. Fisch

    2002-07-29

    Experimental investigations of a planar ferroelectric cathode in a transverse magnetic field up to 3 kGs are presented. It is shown that the transverse magnetic field affects differently the operation of ferroelectric plasma cathodes in ''bright'' and ''dark'' modes in vacuum. In the ''bright'' mode, when the surface plasma is formed, the application of the transverse magnetic field leads to an increase of the surface plasma density. In the ''dark'' mode, the magnetic field inhibits the development of electron avalanches along the surface, as it does similarly in other kinds of surface discharges in the pre-breakdown mode.

  17. 95 GHz gyrotron with ferroelectric cathode.

    PubMed

    Einat, M; Pilossof, M; Ben-Moshe, R; Hirshbein, H; Borodin, D

    2012-11-02

    Ferroelectric cathodes were reported as a feasible electron source for microwave tubes. However, due to the surface plasma emission characterizing this cathode, operation of millimeter wave tubes based on it remains questionable. Nevertheless, the interest in compact high power sources of millimeter waves and specifically 95 GHz is continually growing. In this experiment, a ferroelectric cathode is used as an electron source for a gyrotron with the output frequency extended up to 95 GHz. Power above a 5 kW peak and ~0.5 μs pulses are reported; a duty cycle of 10% is estimated to be achievable.

  18. Static ferroelectric memory transistor having improved data retention

    DOEpatents

    Evans, Jr., Joseph T.; Warren, William L.; Tuttle, Bruce A.

    1996-01-01

    An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO.sub.3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively. The preferred B-site dopants are Niobium, Tantalum, and Tungsten at concentrations between 1% and 8%.

  19. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K.; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J.; Kalinin, Sergei V.; Lai, Keji; Demkov, Alexander A.

    2015-01-14

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  20. First-principles study of interface doping in ferroelectric junctions

    PubMed Central

    Wang, Pin-Zhi; Cai, Tian-Yi; Ju, Sheng; Wu, Yin-Zhong

    2016-01-01

    Effect of atomic monolayer insertion on the performance of ferroelectric tunneling junction is investigated in SrRuO3/BaTiO3/SrRuO3 heterostrucutures. Based on first-principles calculations, the atomic displacement, orbital occupancy, and ferroelectric polarization are studied. It is found that the ferroelectricity is enhanced when a (AlO2)− monolayer is inserted between the electrode SRO and the barrier BTO, where the relatively high mobility of doped holes effectively screen ferroelectric polarization. On the other hand, for the case of (LaO)+ inserted layer, the doped electrons resides at the both sides of middle ferroelectric barrier, making the ferroelectricity unfavorable. Our findings provide an alternative avenue to improve the performance of ferroelectric tunneling junctions. PMID:27063704

  1. CuInP2S6 Room Temperature Layered Ferroelectric

    DOE PAGES

    Belianinov, Alex; He, Qian; Dziaugys, Andrius; ...

    2015-05-01

    In this paper, we explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces,more » whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V—likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. Finally, the existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing “graphene family”.« less

  2. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

    PubMed

    Huang, Fei; Chen, Xing; Liang, Xiao; Qin, Jun; Zhang, Yan; Huang, Taixing; Wang, Zhuo; Peng, Bo; Zhou, Peiheng; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Liu, Ming; Liu, Qi; Tian, He; Bi, Lei

    2017-02-01

    Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  3. Ab initio approach to structural, electronic, and ferroelectric properties of antimony sulphoiodide

    NASA Astrophysics Data System (ADS)

    Amoroso, Danila; Picozzi, Silvia

    2016-06-01

    By means of first-principles calculations for the SbSI semiconductor, we show that bare density functional theory fails to reproduce the experimentally observed ferroelectric phase, whereas a more advanced approach, based on hybrid functionals, correctly works. When comparing the paraelectric and ferroelectric phases, our results show polar displacements along the c direction of the Sb and S sublattices with respect to the iodine framework, leading to a predicted spontaneous polarization of P ≃20 μ C/cm2 , in good agreement with experiments. In the ferroelectric phase, the semiconducting behavior of SbSI is confirmed by relatively large values for the indirect and direct gaps (≃2.15 eV and 2.3 eV , respectively). An analysis of the electronic structure, in terms of density of states, charge density distribution, and anomalies in the Born effective charges, reveals (i) the clear presence of a Sb(III) lone pair and (ii) a large covalency in the SbSI bonding, based on the hybridization between Sb and S ions, in turn more ionically bonded to iodine anions. Finally, the interplay between ferroelectricity and spin-orbit coupling reveals a coexistence of Dresselhaus and Rashba relativistic effects and a spin texture that can be reversed by switching the polarization, of potential appeal in electrically controlled spintronics.

  4. CuInP2S6 Room Temperature Layered Ferroelectric

    SciTech Connect

    Belianinov, Alex; He, Qian; Dziaugys, Andrius; Maksymovych, Petro; Eliseev, Eugene; Borisevich, Albina Y.; Morozovska, Anna N.; Banys, Juras; Vysochanskii, Yulian; Kalinin, Sergei V.

    2015-05-01

    In this paper, we explore ferroelectric properties of cleaved 2-D flakes of copper indium thiophosphate, CuInP2S6 (CITP), and probe size effects along with limits of ferroelectric phase stability, by ambient and ultra high vacuum scanning probe microscopy. CITP belongs to the only material family known to display ferroelectric polarization in a van der Waals, layered crystal at room temperature and above. Our measurements directly reveal stable, ferroelectric polarization as evidenced by domain structures, switchable polarization, and hysteresis loops. We found that at room temperature the domain structure of flakes thicker than 100 nm is similar to the cleaved bulk surfaces, whereas below 50 nm polarization disappears. We ascribe this behavior to a well-known instability of polarization due to depolarization field. Furthermore, polarization switching at high bias is also associated with ionic mobility, as evidenced both by macroscopic measurements and by formation of surface damage under the tip at a bias of 4 V—likely due to copper reduction. Mobile Cu ions may therefore also contribute to internal screening mechanisms. Finally, the existence of stable polarization in a van-der-Waals crystal naturally points toward new strategies for ultimate scaling of polar materials, quasi-2D, and single-layer materials with advanced and nonlinear dielectric properties that are presently not found in any members of the growing “graphene family”.

  5. Scanning pyroelectric microscopy for characterizing large-area printed ferroelectric sensors on the nanoscale

    NASA Astrophysics Data System (ADS)

    Stadlober, Barbara; Groten, Jonas; Zirkl, Martin; Haase, Anja; Sawatdee, A.; Scheipl, G.

    2012-10-01

    This work demonstrates a novel surface scanning method for the quantitative determination of the local pyroelectric coefficient in ferroelectric thin films. Such films find application in flexible and large-area printed ferroelectric sensors for gesture-controlled non-touch human-machine interface devices. The method is called Pyroelectric Scanning Probe Microscopy (PyroSPM)[1] and allows generating a map of the pyroelectric response with very high spatial resolution. In domains of previously aligned dipole moments small heat fluctuations are achieved by laser diode excitation from the bottom side thus inducing changes in the surface potential due to the pyroelectric effect. Simultaneously, the surface potential variations are detected by scanning surface potential microscopy thus forming the base for the pyroelectric coefficient map. The potential of the method is demonstrated on the basis of ferroelectric semi-crystalline copolymer thin films yielding local maxima of the pyroelectric coefficients around 40µC/m2K. Another promising feature of PyroSPM is the ability to visualize "screened" polarization thus enabling in-depth profiling of polarization distributions and domain formation and to study the composition dependence and the time and frequency behavior of ferroelectric nano-domains.

  6. Ferroelectric Material Application: Modeling Ferroelectric Field Effect Transistor Characteristics from Micro to Nano

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd, C.; Ho, Fat Duen

    2006-01-01

    All present ferroelectric transistors have been made on the micrometer scale. Existing models of these devices do not take into account effects of nanoscale ferroelectric transistors. Understanding the characteristics of these nanoscale devices is important in developing a strategy for building and using future devices. This paper takes an existing microscale ferroelectric field effect transistor (FFET) model and adds effects that become important at a nanoscale level, including electron velocity saturation and direct tunneling. The new model analyzed FFETs ranging in length from 40,000 nanometers to 4 nanometers and ferroelectric thickness form 200 nanometers to 1 nanometer. The results show that FFETs can operate on the nanoscale but have some undesirable characteristics at very small dimensions.

  7. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

    NASA Astrophysics Data System (ADS)

    Cano, A.; Jiménez, D.

    2010-09-01

    We revise the possibility of having an amplified surface potential in ferroelectric field-effect transistors pointed out by [S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regime that allows for such amplification is actually bounded by the appearance of multidomain ferroelectricity. This imposes a severe limit to the maximum step-up of the surface potential obtainable in the device. We indicate new device design rules taking into account this scenario.

  8. Confinement of ferroelectric domain-wall motion at artificially formed conducting-nanofilaments in epitaxial BiFeO3 thin films.

    PubMed

    Kim, Woo-Hee; Son, Jong Yeog; Jang, Hyun Myung

    2014-05-14

    We report confinement of ferroelectric domain-wall motion at conducting-nanofilament wall in epitaxial BiFeO3 thin film on Nb-doped SrTiO3 substrate. The BiFeO3 film exhibited well-defined ferroelectric response and unipolar resistive switching behavior. We artificially formed conducting-nanofilaments in the BiFeO3 via conducting atomic force microscope techniques. The conducting-nanofilament wall, which does not possess any ferroelectric polarization, is then able to block domain propagation. Consequently, we demonstrate that the domain-wall motion is effectively confined within the conducting-nanofilament wall during polarization switching. This significant new insight potentially gives an opportunity for the artificial manipulation of nanoscale ferroelectric domain.

  9. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

    PubMed

    Wen, Zheng; Li, Chen; Wu, Di; Li, Aidong; Ming, Naiben

    2013-07-01

    Ferroelectric tunnel junctions (FTJs), composed of two metal electrodes separated by an ultrathin ferroelectric barrier, have attracted much attention as promising candidates for non-volatile resistive memories. Theoretical and experimental works have revealed that the tunnelling resistance switching in FTJs originates mainly from a ferroelectric modulation on the barrier height. However, in these devices, modulation on the barrier width is very limited, although the tunnelling transmittance depends on it exponentially as well. Here we propose a novel tunnelling heterostructure by replacing one of the metal electrodes in a normal FTJ with a heavily doped semiconductor. In these metal/ferroelectric/semiconductor FTJs, not only the height but also the width of the barrier can be electrically modulated as a result of a ferroelectric field effect, leading to a greatly enhanced tunnelling electroresistance. This idea is implemented in Pt/BaTiO3/Nb:SrTiO3 heterostructures, in which an ON/OFF conductance ratio above 10(4), about one to two orders greater than those reported in normal FTJs, can be achieved at room temperature. The giant tunnelling electroresistance, reliable switching reproducibility and long data retention observed in these metal/ferroelectric/semiconductor FTJs suggest their great potential in non-destructive readout non-volatile memories.

  10. Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

    NASA Astrophysics Data System (ADS)

    Yan, Z. B.; Yau, H. M.; Li, Z. W.; Gao, X. S.; Dai, J. Y.; Liu, J.-M.

    2016-08-01

    Complementary resistive switching (CRS) has potential applications in ultra-high density three-dimensional crossbar arrays for resistive random access memories and Logic-in-Memories. For real applications, the good stability and electroforming-free character have become essential pre-requisites. In this work, we investigate the resistance switching behaviors of a CRS device based on two anti-serial Au/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions (FTJs). This FTJ-based CRS device shows a stable butterfly-like resistance-voltage hysteresis, as well as self-electroforming, multi-switching, and good performance complementary switching behaviors. The present work presents a convincing demonstration of the complementary multi-switching states modulated by remnant ferroelectric polarization, making the FTJ structure good potentials for high-performance CRS memristors.

  11. High-frequency programmable acoustic wave device realized through ferroelectric domain engineering

    SciTech Connect

    Ivry, Yachin E-mail: cd229@eng.cam.ac.uk; Wang, Nan; Durkan, Colm E-mail: cd229@eng.cam.ac.uk

    2014-03-31

    Surface acoustic wave devices are extensively used in contemporary wireless communication devices. We used atomic force microscopy to form periodic macroscopic ferroelectric domains in sol-gel deposited lead zirconate titanate, where each ferroelectric domain is composed of many crystallites, each of which contains many microscopic ferroelastic domains. We examined the electro-acoustic characteristics of the apparatus and found a resonator behavior similar to that of an equivalent surface or bulk acoustic wave device. We show that the operational frequency of the device can be tailored by altering the periodicity of the engineered domains and demonstrate high-frequency filter behavior (>8 GHz), allowing low-cost programmable high-frequency resonators.

  12. Size Effect in Ferroelectric Long Cylinders

    NASA Astrophysics Data System (ADS)

    Wang, Yuguo; Zhang, Peilin; Wang, Chunlei; Zhong, Weilie; N, Napp; D, R. Tilly

    1995-02-01

    The Curie temperature and polarization in a ferroelectric cylinder with infinite length have been examined using Landau free energy expansion. The Curie temperature and polarization decrease with decreasing cylinder diameter for the positive extrapolation length, and reach zero at the critical size. For negative extrapolation length, both Curie temperature and polarization increase with decreasing cylinder diameter.

  13. A hybrid ferroelectric-flash memory cells

    NASA Astrophysics Data System (ADS)

    Park, Jae Hyo; Byun, Chang Woo; Seok, Ki Hwan; Kim, Hyung Yoon; Chae, Hee Jae; Lee, Sol Kyu; Son, Se Wan; Ahn, Donghwan; Joo, Seung Ki

    2014-09-01

    A ferroelectric-flash (F-flash) memory cells having a metal-ferroelectric-nitride-oxynitride-silicon structure are demonstrated, and the ferroelectric materials were perovskite-dominated Pb(Zr,Ti)O3 (PZT) crystallized by Pt gate electrode. The PZT thin-film as a blocking layer improves electrical and memorial performance where programming and erasing mechanism are different from the metal-ferroelectric-insulator-semiconductor device or the conventional silicon-oxide-nitride-oxide-silicon device. F-flash cells exhibit not only the excellent electrical transistor performance, having 442.7 cm2 V-1 s-1 of field-effect mobility, 190 mV dec-1 of substhreshold slope, and 8 × 105 on/off drain current ratio, but also a high reliable memory characteristics, having a large memory window (6.5 V), low-operating voltage (0 to -5 V), faster P/E switching speed (50/500 μs), long retention time (>10 years), and excellent fatigue P/E cycle (>105) due to the boosting effect, amplification effect, and energy band distortion of nitride from the large polarization. All these characteristics correspond to the best performances among conventional flash cells reported so far.

  14. Ferroelectric control of a Mott insulator

    PubMed Central

    Yamada, Hiroyuki; Marinova, Maya; Altuntas, Philippe; Crassous, Arnaud; Bégon-Lours, Laura; Fusil, Stéphane; Jacquet, Eric; Garcia, Vincent; Bouzehouane, Karim; Gloter, Alexandre; Villegas, Javier E.; Barthélémy, Agnès; Bibes, Manuel

    2013-01-01

    The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its “supertetragonal” phase. Upon polarization reversal of the BiFeO3 gate, the CaMnO3 channel resistance shows a fourfold variation around room temperature, and a tenfold change at ~200 K. This is accompanied by a carrier density modulation exceeding one order of magnitude. We have analyzed the results for various CaMnO3 thicknesses and explain them by the electrostatic doping of the CaMnO3 layer and the presence of a fixed dipole at the CaMnO3/BiFeO3 interface. Our results suggest the relevance of ferroelectric gates to control orbital- or spin-ordered phases, ubiquitous in Mott systems, and pave the way toward efficient Mott-tronics devices. PMID:24089020

  15. Ferroelectric control of metal-insulator transition

    NASA Astrophysics Data System (ADS)

    He, Xu; Jin, Kui-juan; Ge, Chen; Ma, Zhong-shui; Yang, Guo-zhen

    2016-03-01

    We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO3)N/LaNiO3/LaTiO3, in which the BiFeO3 layers are ferroelectric, the LaNiO3 layer is the layer of which the electronic structure is to be tuned, and LaTiO3 layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO3 layer because of the changes of crystal field splitting of the Ni eg orbitals and the bandwidth of the Ni in-plane eg orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.

  16. A Model for Ferroelectric Phase Shifters

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert R.; Qureshi, A. Haq

    2000-01-01

    Novel microwave phase shifters consisting of coupled microstrip lines on thin ferroelectric films have been demonstrated recently. A theoretical model useful for predicting the propagation characteristics (insertion phase shift, dielectric loss, impedance, and bandwidth) is presented here. The model is based on a variational solution for line capacitance and coupled strip transmission line theory.

  17. Photovoltaics with Ferroelectrics: Current Status and Beyond.

    PubMed

    Paillard, Charles; Bai, Xiaofei; Infante, Ingrid C; Guennou, Maël; Geneste, Grégory; Alexe, Marin; Kreisel, Jens; Dkhil, Brahim

    2016-07-01

    Ferroelectrics carry a switchable spontaneous electric polarization. This polarization is usually coupled to strain, making ferroelectrics good piezoelectrics. When coupled to magnetism, they become so-called multiferroic systems, a field that has been widely investigated since 2003. While ferroelectrics are birefringent and non-linear optically transparent materials, the coupling of polarization with optical properties has received, since 2009, renewed attention, triggered notably by low-bandgap ferroelectrics suitable for sunlight spectrum absorption and original photovoltaic effects. Consequently, power conversion efficiencies up to 8.1% were recently achieved and values of 19.5% were predicted, making photoferroelectrics promising photovoltaic alternatives. This article aims at providing an up-to-date review on this emerging and rapidly progressing field by highlighting several important issues and parameters, such as the role of domain walls, ways to tune the bandgap, consequences arising from the polarization switchability, and the role of defects and contact electrodes, as well as the downscaling effects. Beyond photovoltaicity, other polarization-related processes are also described, like light-induced deformation (photostriction) or light-assisted chemical reaction (photostriction). It is hoped that this overview will encourage further avenues to be explored and challenged and, as a byproduct, will inspire other research communities in material science, e.g., so-called hybrid halide perovskites.

  18. Ferroelectric Devices Emit Charged Particles and Radiation

    NASA Technical Reports Server (NTRS)

    Bar-Cohen, Yoseph; Sherrit, Stewart; Bao, Xiaoqi; Felsteiner, Joshua; Karsik, Yakov

    2005-01-01

    Devices called solid-state ferroelectric- based sources (SSFBSs) are under development as sources of electrons, ions, ultraviolet light, and x-rays for diverse applications in characterization and processing of materials. Whereas heretofore it has been necessary to use a different device to generate each of the aforementioned species of charged particles or radiation, a single SSFBS can be configured and operated to selectively generate any of the species as needed using a single source. Relative to comparable prior sources based, variously, on field emission, thermionic emission, and gaseous discharge plasmas, SSFBSs demand less power, and are compact and lightweight. An SSFBS exploits the unique physical characteristics of a ferroelectric material in the presence of a high-frequency pulsed electric field. The basic building block of an SSFBS is a ferroelectric cathode -- a ferroelectric wafer with a solid electrode covering its rear face and a grid electrode on its front face (see figure). The application of a voltage pulse -- typically having amplitude of several kilovolts and duration of several nanoseconds -- causes dense surface plasma to form near the grid wires on the front surface.

  19. Intrinsic ferroelectric switching from first principles

    NASA Astrophysics Data System (ADS)

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.

    2016-06-01

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  20. Intrinsic ferroelectric switching from first principles.

    PubMed

    Liu, Shi; Grinberg, Ilya; Rappe, Andrew M

    2016-06-16

    The existence of domain walls, which separate regions of different polarization, can influence the dielectric, piezoelectric, pyroelectric and electronic properties of ferroelectric materials. In particular, domain-wall motion is crucial for polarization switching, which is characterized by the hysteresis loop that is a signature feature of ferroelectric materials. Experimentally, the observed dynamics of polarization switching and domain-wall motion are usually explained as the behaviour of an elastic interface pinned by a random potential that is generated by defects, which appear to be strongly sample-dependent and affected by various elastic, microstructural and other extrinsic effects. Theoretically, connecting the zero-kelvin, first-principles-based, microscopic quantities of a sample with finite-temperature, macroscopic properties such as the coercive field is critical for material design and device performance; and the lack of such a connection has prevented the use of techniques based on ab initio calculations for high-throughput computational materials discovery. Here we use molecular dynamics simulations of 90° domain walls (separating domains with orthogonal polarization directions) in the ferroelectric material PbTiO3 to provide microscopic insights that enable the construction of a simple, universal, nucleation-and-growth-based analytical model that quantifies the dynamics of many types of domain walls in various ferroelectrics. We then predict the temperature and frequency dependence of hysteresis loops and coercive fields at finite temperatures from first principles. We find that, even in the absence of defects, the intrinsic temperature and field dependence of the domain-wall velocity can be described with a nonlinear creep-like region and a depinning-like region. Our model enables quantitative estimation of coercive fields, which agree well with experimental results for ceramics and thin films. This agreement between model and experiment suggests

  1. Modified Johnson model for ferroelectric lead lanthanum zirconate titanate at very high fields and below Curie temperature.

    SciTech Connect

    Narayanan, M.; Tong, S.; Ma, B.; Liu, S.; Balachandran, U.

    2012-01-01

    A modified Johnson model is proposed to describe the nonlinear field dependence of the dielectric constant ({var_epsilon}-E loop) in ferroelectric materials below the Curie temperature. This model describes the characteristic ferroelectric 'butterfly' shape observed in typical {var_epsilon}-E loops. The predicted nonlinear behavior agreed well with the measured values in both the low- and high-field regions for lead lanthanum zirconate titanate films. The proposed model was also validated at different temperatures below the ferroelectric-to-paraelectric Curie point. The anharmonic coefficient in the model decreased from 6.142 x 10{sup -19} cm{sup 2}/V{sup 2} to 2.039 x 10{sup -19} cm{sup 2}/V{sup 2} when the temperature increased from 25 C to 250 C.

  2. Are lithium niobate (LiNbO3) and lithium tantalate (LiTaO3) ferroelectrics bioactive?

    PubMed

    Vilarinho, Paula Maria; Barroca, Nathalie; Zlotnik, Sebastian; Félix, Pedro; Fernandes, Maria Helena

    2014-06-01

    The use of functional materials, such as ferroelectrics, as platforms for tissue growth in situ or ex situ, is new and holds great promise. But the usage of materials in any bioapplication requires information on biocompatibility and desirably on bioactive behavior when bone tissue engineering is envisaged. Both requirements are currently unknown for many ferroelectrics. Herein the bioactivity of LiNbO3 and LiTaO3 is reported. The formation of apatite-like structures on the surface of LiNbO3 and LiTaO3 powders after immersion in simulated body fluid (SBF) for different soaking periods indicates their bioactive potential. The mechanism of apatite formation is suggested. In addition, the significant release of lithium ions from the ferroelectric powders in the very first minutes of soaking in SBF is examined and ways to overcome this likely hurdle addressed.

  3. Soft memory in a ferroelectric nanoparticle-doped liquid crystal

    NASA Astrophysics Data System (ADS)

    Basu, Rajratan

    2014-02-01

    A small quantity of BaTiO3 ferroelectric nanoparticles (FNP) was doped in a liquid crystal (LC), and the LC + FNP hybrid was found to exhibit a nonvolatile electromechanical memory effect in the isotropic phase. The permanent dipole moment of the FNPs causes the LC molecule to form short-range pseudonematic domains surrounding the FNPs. The FNP-induced short-range orders become more prominent in the isotropic phase when the global nematic order is absent. These short-range domains, being anisotropic in nature, interact with an external electric field, exhibiting a Fréedericksz-type transition. When the field is turned off, these domains stay oriented, showing a hysteresis effect due to the absence of any long-range order and restoring forces in the isotropic phase. The hysteresis graph for this memory effect shows a significant pretransitional behavior on approaching the nematic phase from the isotropic phase.

  4. Properties of ferroelectric/ferromagnetic thin film heterostructures

    NASA Astrophysics Data System (ADS)

    Chen, Daming; Harward, Ian; Linderman, Katie; Economou, Evangelos; Nie, Yan; Celinski, Zbigniew

    2014-05-01

    Ferroelectric/ferromagnetic thin film heterostructures, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on platinum-coated Si substrates using metal-organic decomposition. X-ray diffraction patterns confirmed that the heterostructures contain only SBT and BaM phases. The microwave properties of these heterostructures were studied using a broadband ferromagnetic resonance (FMR) spectrometer from 35 to 60 GHz, which allowed us to determine gyromagnetic ratio and effective anisotropy field. The FMR linewidth is as low as140 Oe at 58 GHz. In addition, measurements of the effective permittivity of the heterostructures were carried out as a function of bias electric field. All heterostructures exhibit hysteretic behavior of the effective permittivity. These properties indicate that such heterostructures have potential for application in dual electric and magnetic field tunable resonators, filters, and phase shifters.

  5. High resolution field effect sensing of ferroelectric charges.

    SciTech Connect

    Ko, H.; Ryu, K.; Park, H.; Park, C.; Jeon, D.; Kim, Y. K.; Jung, J.; Min, D.-K.; Kim, Y.; Lee, H. N.; Park, Y.; Shin, H.; Hong, S.

    2011-03-04

    Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 {micro}s. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 {micro}C/cm{sup 2}, which is equivalent to 1/20 electron per nanometer square at room temperature.

  6. High-Resolution Field Effect Sensing of Ferroelectric Charges

    SciTech Connect

    Ko, Hyoungsoo; Ryu, Kyunghee; Park, Hongsik; Park, Chulmin; Jeon, Daeyoung; Kim, Yong Kwan; Jung, Juhwan; Min, Dong-Ki; Kim, Yunseok; Lee, Ho Nyung; Park, Yoondong; Shin, Hyunjung; Hong, Seungbum

    2011-01-01

    Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 {micro}s. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 {micro}C/cm{sup 2}, which is equivalent to 1/20 electron per nanometer square at room temperature.

  7. Atomic-level structural correlations across the morphotropic phase boundary of a ferroelectric solid solution: xBiMg1/2Ti1/2O3-(1$-$x)PbTiO3

    DOE PAGES

    Datta, Kaustuv; Neder, Reinhard B.; Chen, Jun; ...

    2017-03-28

    Revelation of unequivocal structural information at the atomic level for complex systems is uniquely important for deeper and generic understanding of the structure property connections and a key challenge in materials science. Here in this paper we report an experimental study of the local structure by applying total elastic scattering and Raman scattering analyses to an important non-relaxor ferroelectric solid solution exhibiting the so-called composition-induced morphotropic phase boundary (MPB), where concomitant enhancement of physical properties have been detected. The powerful combination of static and dynamic structural probes enabled us to derive direct correspondence between the atomic-level structural correlations and reportedmore » properties. The atomic pair distribution functions obtained from the neutron total scattering experiments were analysed through big-box atom-modelling implementing reverse Monte Carlo method, from which distributions of magnitudes and directions of off-centred cationic displacements were extracted. We found that an enhanced randomness of the displacement-directions for all ferroelectrically active cations combined with a strong dynamical coupling between the A- and B-site cations of the perovskite structure, can explain the abrupt amplification of piezoelectric response of the system near MPB. Finally, altogether this provides a more fundamental basis in inferring structure-property connections in similar systems including important implications in designing novel and bespoke materials.« less

  8. Effects of the poling process on dielectric, piezoelectric, and ferroelectric properties of lead zirconate titanate

    NASA Astrophysics Data System (ADS)

    Prewitt, Anderson D.

    Smart materials are widely used in many of today's relevant technologies such as nano and micro electromechanical systems (NEMS and MEMS), sensors, actuators, nonvolatile memory, and solid state devices. Many of these systems rely heavily on the electromechanical properties of certain smart materials, such as piezoelectricity and ferroelectricity. By definition, piezoelectricity is a mechanical stress in a material that produces an electric displacement (known as the direct piezoelectric effect) or electrical charge in a material which produces a mechanical strain (known as the converse piezoelectric effect). Ferroelectricity is a sub-class of piezoelectricity in which the polarization occurs spontaneously and the dipoles can be reoriented. Domain walls are the nanoscale regions separating two finite distinctively polarized areas in a ferroelectric. The reorientation of polarization in a material is called the poling process and many factors can influence the effectiveness of this process. A more fundamental understanding of how electrical and mechanical loading changes the domain structure of these materials could lead to enhanced properties such as increased energy transduction and decreased nonlinear behavior. This research demonstrates the influence of mechanical pressure and electrical field during and after the poling process on domain walls. The effects of strong mechanical forces on large-scale domain switching and weak cyclic forces on small-scale domain wall motion are investigated to show how they affect the macroscopic behavior of these materials. Commercial lead zirconate titanate ceramics were studied under various poling conditions and the effect of domain wall motion on the piezoelectric, dielectric, and ferroelectric properties was investigated. Polarization and strain measurements from samples poled at specific conditions and converse piezoelectric coefficient and dielectric permittivity data was extracted and interpreted in the context of

  9. Disrupting long-range polar order with an electric field

    NASA Astrophysics Data System (ADS)

    Guo, Hanzheng; Liu, Xiaoming; Xue, Fei; Chen, Long-Qing; Hong, Wei; Tan, Xiaoli

    2016-05-01

    Electric fields are known to favor long-range polar order through the aligning of electric dipoles in relation to Coulomb's force. Therefore, it would be surprising to observe a disordered polar state induced from an ordered state by electric fields. Here we show such an unusual phenomenon in a polycrystalline oxide where electric fields induce a ferroelectric-to-relaxor phase transition. The nonergodic relaxor phase with disordered dipoles appears as an intermediate state under electric fields during polarization reversal of the ferroelectric phase. Using the phenomenological theory, the underlying mechanism for this unexpected behavior can be attributed to the slow kinetics of the ferroelectric-to-relaxor phase transition, as well as its competition against domain switching during electric reversal. The demonstrated material could also serve as a model system to study the transient stages in first-order phase transitions; the slow kinetics does not require the use of sophisticated ultrafast tools.

  10. Study of ferroelectric characteristics of diisopropylammonium bromide films

    NASA Astrophysics Data System (ADS)

    Thirmal, C.; Biswas, P. P.; Shin, Y. J.; Noh, T. W.; Giridharan, N. V.; Venimadhav, A.; Murugavel, P.

    2016-09-01

    Organic molecular ferroelectrics are highly desirable due to their numerous advantages. In the present work, a thick film of diisopropylammonium bromide organic molecular ferroelectric is fabricated on the ITO/glass substrate. The grown film shows preferential orientation along the c-axis with a ferroelectric transition at 419 K. The piezoresponse force microscopic measurements are done in a dual ac resonance tracking mode for its switching characteristics. The amplitude and phase images of the oppositely written domain patterns exhibit a clear contrast with 180° phase difference. The dynamical spectroscopic studies reveal a butterfly loop in amplitude and hysteretic character of the phase which are the expected characteristics features of ferroelectrics. In addition, the macroscopic polarization versus electric field hysteresis gives an additional proof for ferroelectric character of the film with the maximum polarization of 3.5 μC/cm2. Overall, we have successfully fabricated diisopropylammonium bromide organic films and demonstrated its room temperature ferroelectric characteristics.

  11. Patterned piezo-, pyro-, and ferroelectricity of poled polymer electrets

    NASA Astrophysics Data System (ADS)

    Qiu, Xunlin

    2010-07-01

    Polymers with strong piezo-, pyro-, and ferroelectricity are attractive for a wide range of applications. In particular, semicrystalline ferroelectric polymers are suitable for a large variety of piezo- and pyroelectric transducers or sensors, while amorphous polymers containing chromophore molecules are particularly interesting for photonic devices. Recently, a new class of polymer materials has been added to this family: internally charged cellular space-charge polymer electrets (so-called "ferroelectrets"), whose piezoelectricity can be orders of magnitude higher than that of conventional ferroelectric polymers. Suitable patterning of these materials leads to improved or unusual macroscopic piezo-, pyro-, and ferroelectric or nonlinear optical properties that may be particularly useful for advanced transducer or waveguide applications. In the present paper, the piezo-, pyro-, and ferroelectricity of poled polymers is briefly introduced, an overview on the preparation of polymer electrets with patterned piezo-, pyro-, and ferroelectricity is provided and a survey of selected applications is presented.

  12. Ferroelectric domain wall motion induced by polarized light

    PubMed Central

    Rubio-Marcos, Fernando; Del Campo, Adolfo; Marchet, Pascal; Fernández, Jose F.

    2015-01-01

    Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light. PMID:25779918

  13. Ferroelectric domain engineering by focused infrared femtosecond pulses

    SciTech Connect

    Chen, Xin; Shvedov, Vladlen; Sheng, Yan; Karpinski, Pawel; Koynov, Kaloian; Wang, Bingxia; Trull, Jose; Cojocaru, Crina; Krolikowski, Wieslaw

    2015-10-05

    We demonstrate infrared femtosecond laser-induced inversion of ferroelectric domains. This process can be realised solely by using tightly focused laser pulses without application of any electric field prior to, in conjunction with, or subsequent to the laser irradiation. As most ferroelectric crystals like LiNbO{sub 3}, LiTaO{sub 3}, and KTiOPO{sub 4} are transparent in the infrared, this optical poling method allows one to form ferroelectric domain patterns much deeper inside a ferroelectric crystal than by using ultraviolet light and hence can be used to fabricate practical devices. We also propose in situ diagnostics of the ferroelectric domain inversion process by monitoring the Čerenkov second harmonic signal, which is sensitive to the appearance of ferroelectric domain walls.

  14. Ferroelectric domain engineering and micro-structuring of lithium niobate

    NASA Astrophysics Data System (ADS)

    Mailis, Sakellaris

    2010-11-01

    This paper discusses a number of recently developed all optical and optically assisted methods for ferroelectric domain engineering in lithium niobate and their impact on the micro-structuring of this optical ferroelectric crystal. Optical radiation is used to change the response of lithium niobate crystals to externally applied electric field encouraging or inhibiting ferroelectric domain inversion in a simultaneous or latent manner. Optically assisted poling processes have the advantage of producing ferroelectric domains with arbitrary shapes free from crystal symmetry restrictions which is very important for fabricating surface micro/nano-structures in this material.

  15. Ferroelectric nanostructure having switchable multi-stable vortex states

    DOEpatents

    Naumov, Ivan I.; Bellaiche, Laurent M.; Prosandeev, Sergey A.; Ponomareva, Inna V.; Kornev, Igor A.

    2009-09-22

    A ferroelectric nanostructure formed as a low dimensional nano-scale ferroelectric material having at least one vortex ring of polarization generating an ordered toroid moment switchable between multi-stable states. A stress-free ferroelectric nanodot under open-circuit-like electrical boundary conditions maintains such a vortex structure for their local dipoles when subject to a transverse inhomogeneous static electric field controlling the direction of the macroscopic toroidal moment. Stress is also capable of controlling the vortex's chirality, because of the electromechanical coupling that exists in ferroelectric nanodots.

  16. A ferroelectric model for the low emissivity highlands on Venus

    NASA Astrophysics Data System (ADS)

    Shepard, M. K.; Arvidson, R. E.; Brackett, R. A.; Fegley, B.

    1994-03-01

    A model to explain the low emissivity venusian highlands is proposed utilizing the temperature-dependent dielectric constant of ferroelectric minerals. Ferroelectric minerals are known to occur in alkaline and carbonite rocks, both of which are plausible for Venus. Ferroelectric minerals possess extremely high dielectric constants (105) over small temperature intervals and are only required in minor (much less than 1%) abundances to explain the observed emissivities. The ferroelectric model can account for: (1) the observed reduction in emissivity with increased altitude, (2) the abrupt return to normal emissivities at highest elevations, and (3) the variations in the critical elevation observed from region to region.

  17. One‐Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications

    PubMed Central

    Liang, Longyue; Kang, Xueliang

    2016-01-01

    One‐dimensional (1D) ferroelectric nanostructures, such as nanowires, nanorods, nanotubes, nanobelts, and nanofibers, have been studied with increasing intensity in recent years. Because of their excellent ferroelectric, ferroelastic, pyroelectric, piezoelectric, inverse piezoelectric, ferroelectric‐photovoltaic (FE‐PV), and other unique physical properties, 1D ferroelectric nanostructures have been widely used in energy‐harvesting devices, nonvolatile random access memory applications, nanoelectromechanical systems, advanced sensors, FE‐PV devices, and photocatalysis mechanisms. This review summarizes the current state of 1D ferroelectric nanostructures and provides an overview of the synthesis methods, properties, and practical applications of 1D nanostructures. Finally, the prospects for future investigations are outlined. PMID:27812477

  18. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO{sub 2} thin films

    SciTech Connect

    Lomenzo, Patrick D.; Nishida, Toshikazu; Takmeel, Qanit; Zhou, Chuanzhen; Fancher, Chris M.; Jones, Jacob L.; Lambers, Eric; Rudawski, Nicholas G.; Moghaddam, Saeed

    2015-04-07

    Ferroelectric HfO{sub 2}-based thin films, which can exhibit ferroelectric properties down to sub-10 nm thicknesses, are a promising candidate for emerging high density memory technologies. As the ferroelectric thickness continues to shrink, the electrode-ferroelectric interface properties play an increasingly important role. We investigate the TaN interface properties on 10 nm thick Si-doped HfO{sub 2} thin films fabricated in a TaN metal-ferroelectric-metal stack which exhibit highly asymmetric ferroelectric characteristics. To understand the asymmetric behavior of the ferroelectric characteristics of the Si-doped HfO{sub 2} thin films, the chemical interface properties of sputtered TaN bottom and top electrodes are probed with x-ray photoelectron spectroscopy. Ta-O bonds at the bottom electrode interface and a significant presence of Hf-N bonds at both electrode interfaces are identified. It is shown that the chemical heterogeneity of the bottom and top electrode interfaces gives rise to an internal electric field, which causes the as-grown ferroelectric domains to preferentially polarize to screen positively charged oxygen vacancies aggregated at the oxidized bottom electrode interface. Electric field cycling is shown to reduce the internal electric field with a concomitant increase in remanent polarization and decrease in relative permittivity. Through an analysis of pulsed transient switching currents, back-switching is observed in Si-doped HfO{sub 2} thin films with pinched hysteresis loops and is shown to be influenced by the internal electric field.

  19. Magnetic-field-induced ferroelectric polarization reversal in magnetoelectric composites revealed by piezoresponse force microscopy.

    PubMed

    Miao, Hongchen; Zhou, Xilong; Dong, Shuxiang; Luo, Haosu; Li, Faxin

    2014-08-07

    Controlling electric polarization (or magnetization) in multiferroic materials with external magnetic fields (or electric fields) is very important for fundamental physics and spintronic devices. Although there has been some progress on magnetic-field-induced polarization reversal in single-phase multiferroics, such behavior has so far never been realized in composites. Here we show that it is possible to reverse ferroelectric polarization using magnetic fields in a bilayer Terfenol-D/PMN-33%PT composite. We realized this by ferroelectric domain imaging using piezoresponse force microscopy (PFM) under applied magnetic field loading. The internal electric field caused by the magnetoelectric (ME) effect in the PMN-PT crystal is considered as the driving force for the 180° polarization switching, and its existence is verified by switching spectroscopy PFM testing under a series of external magnetic fields. A quantitative method is further suggested to estimate the local ME coefficient based on the switching spectroscopy PFM testing results.

  20. The effects of layering in ferroelectric Si-doped HfO2 thin films

    NASA Astrophysics Data System (ADS)

    Lomenzo, Patrick D.; Takmeel, Qanit; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L.; Moghaddam, Saeed; Nishida, Toshikazu

    2014-08-01

    Atomic layer deposited Si-doped HfO2 thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO2 thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

  1. Effect of Dipolar Orientational Polarization on Electronic Conductivity in Ferroelectric Polymer Electrets

    NASA Astrophysics Data System (ADS)

    Yang, Lianyun; Zhu, Lei

    2014-03-01

    The leakage current, ion migration, and dipolar orientational polarization are major losses in ferroelectric polymers. The loss from the leakage current originates from electronic conduction and its behavior could be significantly affected by the internal electric field, which is induced by the dipolar orientational polarization. In this work, the leakage current in the corona charged PVDF electrets is studied under different external electric fields. Under low applied electric field, when no or very few dipoles could flip, the conductivity from the leakage direct current increases upon increasing the electric field. Under higher electric field, the aligned dipole-induced internal field would prevent the electrons from going through so that the conductivity decreases. After all the dipoles are aligned with the external electric field, the conductivity can increase again. This study will help us better understand the interplay between electronic conduction and dipolar orientation in ferroelectric materials.

  2. Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics

    NASA Astrophysics Data System (ADS)

    Borkar, Hitesh; Tomar, M.; Gupta, Vinay; Scott, J. F.; Kumar, Ashok

    2015-09-01

    We report the polarization, displacement current, and leakage current behavior of a trivalent nonpolar cation (Al3+) substituted lead free ferroelectric (Na0.46Bi0.46-xAlxBa0.08)TiO3 (NBAT-BT) (x = 0, 0.05, 0.07 and 0.10) electroceramics with tetragonal phase and P4 mm space group symmetry. Almost, three orders of magnitude decrease in leakage current were observed under electrical poling, which significantly improves microstructure, polarization, and displacement current. Effective poling neutralizes the domain pinning, traps charges at grain boundaries and fills oxygen vacancies with free charge carriers in matrix, thus saturated macroscopic polarization in contrast to that in unpoled samples. E-poling changes "bananas" type polarization loops to real ferroelectric loops.

  3. Switchable diode-effect mechanism in ferroelectric BiFeO{sub 3} thin film capacitors

    SciTech Connect

    Matsuo, Hiroki; Kitanaka, Yuuki; Inoue, Ryotaro; Noguchi, Yuji Miyayama, Masaru

    2015-09-21

    We investigate the mechanism of a switchable diode behavior observed in ferroelectric SrRuO{sub 3}/BiFeO{sub 3} (BFO)/SrRuO{sub 3} capacitors. We experimentally demonstrate that the switchable diode effect observed in the capacitors is induced by the polarization reversal in the BFO film. The conductivity in an Ohmic region in different oxidation states provides direct evidence that electron hole acts as the majority carrier, delivering p-type conduction. Density functional theory (DFT) calculations show that the p-type conduction arises from an unoccupied gap state of Fe{sup 4+} in an FeO{sub 5} pyramid which is derived from Bi vacancy. Our experimental and DFT study leads to the conclusion that the switchable diode effect originates from an asymmetric band bending in the top and bottom depletion layers modulated by ferroelectric polarization and oxygen vacancies.

  4. In situ synchrotron x-ray studies of ferroelectric thin films.

    SciTech Connect

    Fong, D. D.; Eastman, J. A.; Stephenson, G. B.; Fuoss, P. H.; Streiffer, S. K.; Thompson, C.; Auciello, O.; Materials Science Division; Northern Illinois Univ.

    2005-03-01

    In situ synchrotron X-ray scattering was used to observe both the growth of PbTiO{sub 3} films by metal-organic chemical vapor deposition and the behavior of the ferroelectric phase transition as a function of film thickness. The dependences of growth mode and deposition rate on gas flows and substrate temperature were determined by homoepitaxial growth studies on thick films (>50 nm). These studies facilitated the growth of thin coherently strained PbTiO{sub 3} films on SrTiO{sub 3} (001) substrates, with thicknesses ranging from 2 to 42 nm. Experiments on the ferroelectric phase transition as a function of film thickness were carried out in these films under controlled mechanical and electrical boundary conditions.

  5. Three-dimensional H-bonding and ferroelectric transition in KDP. Quantum-chemical study

    NASA Astrophysics Data System (ADS)

    Dolin, S. P.; Mikhailova, T. Yu; Solin, M. V.; Breslavskaya, N. N.; Levin, A. A.

    On basis of the nonempirical methods (SCF, B3LYP, MP2-MP4) and several cluster models, the ferroelectric KH2PO4 (KDP) and its deuteroanalogue are studied. The tunneling integralsΩ and the parameters of the effective coupling of protons/deuterons U,V (the Ising parameters) are calculated for these materials with the 3d network of H/D-bonds. Using the obtained U,V andΩ values in the frames of molecular field approximation, it is found that the structural phase (ferroelectric) transition occurs for both crystals within the lowering of temperature. Such low-temperature behavior differs the 3d KDP-family materials from 0d systems, where the low-temperature phase transition takes place only upon deuteration. It is demonstrated that this difference is associated with an abrupt Ising parameters growth for KDP if compared with the nondeuterated 0d materials.

  6. Crystallographic, Ferroelectric and Electronic Properties of the Sr2ZrTiO6 Double Perovskite

    NASA Astrophysics Data System (ADS)

    Landínez Téllez, D. A.; Carrero Bermúdez, L. A.; Deluque Toro, C. E.; Cardona, R.; Roa-Rojas, J.

    2013-08-01

    In this paper, we report structural analysis, ferroelectric behavior and electronic structure of Sr2ZrTiO6 double perovskite. Samples were produced by the solid state reaction recipe. Crystallographic analysis was performed by Rietveld refinement of experimental X-ray diffraction patterns. Results show that this material crystallizes in a tetragonal perovskite structure which corresponds to the space group I4/m. The curve of polarization as a function of applied voltage evidences a ferroelectric character with saturation polarization on the application of voltages up to 1800 V. Calculations of density of states and band structure for this manganite-like material were carried out by means of the density functional theory implemented into the Wien2k code. Results of total and partial density of states reveal the insulator character of this material with an energy gap of 2.66 eV.

  7. The ferroelectric analysis of LCoS

    NASA Astrophysics Data System (ADS)

    Hao, Lifang; Lin, Bin

    2010-11-01

    In order to utilize the LCoS, this paper advances a new patten liquid material which is ferroelectric liquid crystal. It has the characteristics, such as time division-style full-color display, high resolution, low voltage and high speed response. If it is used in the microdisplay, we can attain large area visual display, high open rate and high responding time. The alignment of ferroelectric liquid crystal is very complicated, so we use photo-alignment, rubbing or hybrid-alignment to determine the direction of liquid. Once the liquid layer has been fabricated, we use space parameter method to analyse the liquid layer, and we make sure the detailed optical thickness and pretilted angle.

  8. Glucose Suppresses Biological Ferroelectricity in Aortic Elastin

    NASA Astrophysics Data System (ADS)

    Liu, Yuanming; Wang, Yunjie; Chow, Ming-Jay; Chen, Nataly Q.; Ma, Feiyue; Zhang, Yanhang; Li, Jiangyu

    2013-04-01

    Elastin is an intriguing extracellular matrix protein present in all connective tissues of vertebrates, rendering essential elasticity to connective tissues subjected to repeated physiological stresses. Using piezoresponse force microscopy, we show that the polarity of aortic elastin is switchable by an electrical field, which may be associated with the recently discovered biological ferroelectricity in the aorta. More interestingly, it is discovered that the switching in aortic elastin is largely suppressed by glucose treatment, which appears to freeze the internal asymmetric polar structures of elastin, making it much harder to switch, or suppressing the switching completely. Such loss of ferroelectricity could have important physiological and pathological implications from aging to arteriosclerosis that are closely related to glycation of elastin.

  9. Block copolymer/ferroelectric nanoparticle nanocomposites

    NASA Astrophysics Data System (ADS)

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-08-01

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were

  10. Upper bounds for flexoelectric coefficients in ferroelectrics

    NASA Astrophysics Data System (ADS)

    Yudin, P. V.; Ahluwalia, R.; Tagantsev, A. K.

    2014-02-01

    Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosymmetric materials. These features make flexoelectricity of growing interest during the last decade. At the same time, the available theoretical and experimental results are rather contradictory. In particular, experimentally measured flexoelectric coefficients in some ferroelectric materials largely exceed theoretically predicted values. Here, we determine the upper limits for the magnitude of the static bulk contribution to the flexoelectric effect in ferroelectrics, the contribution which was customarily considered as the dominating one. The magnitude of the upper bounds obtained suggests that the anomalously high flexoelectric coupling documented for perovskite ceramics can hardly be attributed to a manifestation of the static bulk effect.

  11. Super-crystals in composite ferroelectrics

    PubMed Central

    Pierangeli, D.; Ferraro, M.; Di Mei, F.; Di Domenico, G.; de Oliveira, C. E. M.; Agranat, A. J.; DelRe, E.

    2016-01-01

    As atoms and molecules condense to form solids, a crystalline state can emerge with its highly ordered geometry and subnanometric lattice constant. In some physical systems, such as ferroelectric perovskites, a perfect crystalline structure forms even when the condensing substances are non-stoichiometric. The resulting solids have compositional disorder and complex macroscopic properties, such as giant susceptibilities and non-ergodicity. Here, we observe the spontaneous formation of a cubic structure in composite ferroelectric potassium–lithium–tantalate–niobate with micrometric lattice constant, 104 times larger than that of the underlying perovskite lattice. The 3D effect is observed in specifically designed samples in which the substitutional mixture varies periodically along one specific crystal axis. Laser propagation indicates a coherent polarization super-crystal that produces an optical X-ray diffractometry, an ordered mesoscopic state of matter with important implications for critical phenomena and applications in miniaturized 3D optical technologies. PMID:26907725

  12. A Ferroelectric Oxide Made Directly on Silicon

    DTIC Science & Technology

    2009-04-17

    Issues of Complex, Epitaxial Oxide Growth and Integration with Silicon by Molecular Beam Epitaxy (Pennsylvania State University, University Park, 2002...Ferroelectric Oxide Made Directly on Silicon Maitri P. Warusawithana,1 Cheng Cen,2 Charles R. Sleasman,2 Joseph C. Woicik,3 Yulan Li,4 Lena Fitting...Schlom1* Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering

  13. Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

    DTIC Science & Technology

    2006-09-15

    gap materials because the visible photon energy is much smaller than the band gap (10). Consequently, the absorption is extremely weak and the...UV ex- citation, the photon energy is above the band gaps of ferroelectrics, leading to a much stronger absorption and a shorter penetration depth...preventing light from entering the substrate. UV excitation near the band gap also leads to strong resonance enhancement of Raman sig- nals. This is

  14. Block copolymer/ferroelectric nanoparticle nanocomposites.

    PubMed

    Pang, Xinchang; He, Yanjie; Jiang, Beibei; Iocozzia, James; Zhao, Lei; Guo, Hanzheng; Liu, Jin; Akinc, Mufit; Bowler, Nicola; Tan, Xiaoli; Lin, Zhiqun

    2013-09-21

    Nanocomposites composed of diblock copolymer/ferroelectric nanoparticles were formed by selectively constraining ferroelectric nanoparticles (NPs) within diblock copolymer nanodomains via judicious surface modification of ferroelectric NPs. Ferroelectric barium titanate (BaTiO3) NPs with different sizes that are permanently capped with polystyrene chains (i.e., PS-functionalized BaTiO3NPs) were first synthesized by exploiting amphiphilic unimolecular star-like poly(acrylic acid)-block-polystyrene (PAA-b-PS) diblock copolymers as nanoreactors. Subsequently, PS-functionalized BaTiO3 NPs were preferentially sequestered within PS nanocylinders in the linear cylinder-forming polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer upon mixing the BaTiO3 NPs with PS-b-PMMA. The use of PS-b-PMMA diblock copolymers, rather than traditional homopolymers, offers the opportunity for controlling the spatial organization of PS-functionalized BaTiO3 NPs in the PS-b-PMMA/BaTiO3 NP nanocomposites. Selective solvent vapor annealing was utilized to control the nanodomain orientation in the nanocomposites. Vertically oriented PS nanocylinders containing PS-functionalized BaTiO3 NPs were yielded after exposing the PS-b-PMMA/BaTiO3 NP nanocomposite thin film to acetone vapor, which is a selective solvent for PMMA block. The dielectric properties of nanocomposites in the microwave frequency range were investigated. The molecular weight of PS-b-PMMA and the size of BaTiO3 NPs were found to exert an apparent influence on the dielectric properties of the resulting nanocomposites.

  15. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

    1996-01-01

    A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

  16. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, P.J.

    1987-03-02

    A method of electrically inducing mechanical precompression of ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion. 2 figs.

  17. Flat panel ferroelectric electron emission display system

    DOEpatents

    Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

    1996-04-16

    A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

  18. Electrically induced mechanical precompression of ferroelectric plates

    DOEpatents

    Chen, Peter J.

    1987-01-01

    A method of electrically inducing mechanical precompression of a ferroelectric plate covered with electrodes utilizes the change in strains of the plate as functions of applied electric field. A first field polarizes and laterally shrinks the entire plate. An outer portion of the electrodes are removed, and an opposite field partially depolarizes and expands the central portion of the plate against the shrunk outer portion.

  19. WFL: Microwave Applications of Thin Ferroelectric Films

    NASA Technical Reports Server (NTRS)

    Romanofsky, Robert

    2013-01-01

    We have developed a family of tunable microwave circuits, operating from X- through Ka-band, based on laser ablated BaxSr1-xTiO films on lanthanum aluminate and magnesium oxide substrates. Circuits include voltage controlled oscillators, filters, phase shifters and antennas. A review of the basic theory of operation of these devices will be presented along with measured performance. Emphasis has been on low-loss phase shifters to enable a new phased array architecture. The critical role of phase shifter loss and transient response in reflectarray antennas will be discussed. The Ferroelectric Reflectarray Critical Components Space Experiment was launched on the penultimate Space Shuttle, STS-134, in May of 2011. It included a bank of ferroelectric phase shifters with two different stoichiometries as well as ancillary electronics. The experiment package and status will be reported. In addition, unusual results of a Van der Pauw measurement involving a ferroelectric film grown on buffered high resisitivity silicon will be discussed.

  20. Prediction of a native ferroelectric metal

    NASA Astrophysics Data System (ADS)

    Filippetti, Alessio; Fiorentini, Vincenzo; Ricci, Francesco; Delugas, Pietro; Íñiguez, Jorge

    2016-04-01

    Over 50 years ago, Anderson and Blount discussed symmetry-allowed polar distortions in metals, spawning the idea that a material might be simultaneously metallic and ferroelectric. While many studies have ever since considered such or similar situations, actual ferroelectricity--that is, the existence of a switchable intrinsic electric polarization--has not yet been attained in a metal, and is in fact generally deemed incompatible with the screening by mobile conduction charges. Here we refute this common wisdom and show, by means of first-principles simulations, that native metallicity and ferroelectricity coexist in the layered perovskite Bi5Ti5O17. We show that, despite being a metal, Bi5Ti5O17 can sustain a sizable potential drop along the polar direction, as needed to reverse its polarization by an external bias. We also reveal striking behaviours, as the self-screening mechanism at work in thin Bi5Ti5O17 layers, emerging from the interplay between polar distortions and carriers in this compound.

  1. Ferromagnetic and ferroelectric nanoparticles in liquid crystals

    NASA Astrophysics Data System (ADS)

    Reznikov, Yuriy; Glushchenko, Anatoliy; Garbovskiy, Yuriy

    This chapter introduces the basic principles of physics of magnetic and ferroelectric nanoparticles suspensions in thermotropic liquid crystals (LCs). It also covers the main features of such suspensions along with the look at the challenges that researchers in the field are facing today. Special attention is paid to understanding of major physical mechanisms responsible for the inuence of nanoparticles on the properties of LCs. In the case of magnetic nanoparticles, their dipole moments are aligned by an external magnetic field that, in turn, results in a reorientation of the LC due to the surface anchoring between the nanoparticles and the LC. This mechanical coupling between the LC and the magnetic particles determines the unique sensitivity of the suspension to magnetic fields. In regard to the ferroelectric particles, their effect on LCs is due to a strong electric field by the permanent electric dipoles of the particles. This field is strong enough to change the orientational ordering of the LC surrounding the particle. In addition, the above-mentioned mechanism of the surface anchoring may also take place. The ongoing scientific and technological problems related to the suspensions are discussed. Among such problems are the stability of the suspensions, selection of the proper surfactants, formation of the particle chains, and the effect of the electric charges on the properties of the ferroelectric liquid crystal suspensions.

  2. Ferroelectricity in underdoped La-based cuprates

    PubMed Central

    Viskadourakis, Z.; Sunku, S. S.; Mukherjee, S.; Andersen, B. M.; Ito, T.; Sasagawa, T.; Panagopoulos, C.

    2015-01-01

    Doping a “parent” antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-Tc superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-Tc superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-Tc superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La2-xSrxCuO4, La2LixCu1-xO4 and La2CuO4+x. It is proposed that ferroelectricity may result from local CuO6 octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction. PMID:26486276

  3. Quantum properties of charged ferroelectric domain walls

    NASA Astrophysics Data System (ADS)

    Sturman, B.; Podivilov, E.; Stepanov, M.; Tagantsev, A.; Setter, N.

    2015-12-01

    We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this potential, dependencies on the ferroelectric characteristics, as well as the spatial structure and formation energy of the wall. Our description is based on the Hartree and Thomas-Fermi methods and Landau theory for the ferroelectric transitions. Changeover from a few to many quantum levels (with the electron binding energies ˜1 eV) is controlled by a single characteristic parameter. The quantum models well describe the core of the wall, whose width is typically ˜10 nm. Additionally, the walls possess pronounced long-range tails which are due to trap recharging. For the trap concentration Nt=(1017-1018) cm-3 , the tail length ℓ is of the μ m scale. On the distances much larger than ℓ the walls are electrically uncoupled from each other and the crystal faces.

  4. Influence of ferroelectric polarization on magnetic anisotropy

    NASA Astrophysics Data System (ADS)

    Mardana, A.; Ducharme, S.; Adenwalla, S.

    2010-03-01

    Thin film heterostructures of transition metal ferromagnets (FM) and polymer ferroelectrics (FE) are investigated to look for changes in the magnetic anisotropy of the FM layer that occur on switching the FE polarization (with an ensuing change in the electric field direction).[1] Samples of [Glass/ Pd (50 nm)/Co wedge (0.9-2.6nm)/ferroelectric P(VDF-TrFE) (53 nm)/Al (30nm)] are deposited via sputtering or evaporation for the metallic layers and via Langmuir-Schaefer deposition for the polymer ferroelectric. [2] Magnetic and FE properties have been characterized using the Magneto-Optical Kerr Effect (MOKE) and the pyroelectric effect. Polar and longitudinal MOKE loops are measured across the Co wedge for both positive and negative FE polarization and the difference in the two MOKE loops is ascribed to the changes in the magnetic anisotropy of the FM layer. [3] These changes are most apparent in the region where the Co undergoes a transition from in-plane to out-of-plane anisotropy. This research is supported by the NSF MRSEC through Grant No. DMR- 0820521 1. Chun-Gang Duan et al, Appl. Phys. Lett. 92, 122905 (2008) 2. A. V. Bune, et al, Nature (London) 391, 874 (1998) 3. P. F. Carcia, J.Appl. Phys. 63, 5066 (1988)

  5. Low electric-field driven ultrahigh electrostrains in Sb-substituted (Na,K)NbO{sub 3} lead-free ferroelectric ceramics

    SciTech Connect

    Fu, Jian; Zuo, Ruzhong E-mail: rzzuo@hotmail.com; Qi, He; Zhang, Chen; Li, Jingfeng; Li, Longtu

    2014-12-15

    Lead-free (Na{sub 0.52}K{sub 0.48})(Nb{sub 1−y}Sb{sub y})O{sub 3} (NKNS{sub y}) ferroelectric ceramics were reported to exhibit an ultrahigh electrostrain (dynamic d{sub 33}* (=S/E) of 800–1100 pm/V) in a relatively low driving electric field range (1–4 kV/mm). As evidenced by in-situ synchrotron x-ray diffraction and dielectric measurements, the mechanism of generating large strains was ascribed to both the low-field induced reversible rhombohedral-monoclinic phase transition (1–2 kV/mm) and the enhanced domain switching (2–4 kV/mm) owing to the normal to relaxor phase transformation, which contribute to ∼62% and ∼38% of the total strain, respectively. The results indicate that the NKNS{sub y} compositions would have excellent potentials for applications of lead-free actuator ceramics.

  6. Magnetic field-induced ferroelectric domain structure evolution and magnetoelectric coupling for [110]-oriented PMN-PT/Terfenol-D multiferroic composites

    NASA Astrophysics Data System (ADS)

    Fang, F.; Jing, W. Q.

    2016-01-01

    Magnetic field-induced polarization rotation and magnetoelectric coupling effects are studied for [110]-oriented (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3/Tb0.3Dy0.7Fe2(PMN-xPT/Terfenol-D) multiferroic composites. Two compositions of the [110]-oriented relaxor ferroelectric single crystals, PMN-28PT and PMN-33PT, are used. In [110]-oriented PMN-28PT, domains of rhombohedral (R) and monoclinic (MB) phases coexist prior to the magnetic loadings. Upon the applied magnetic loadings, phase transition from monoclinic MB to R phase occurs. In [110]-oriented PMN-33PT, domains are initially of mixed orthorhombic (O) and MB phases, and the phase transition from O to MB phase takes place upon the external magnetic loading. Compared to PMN-28PT, the PMN-33PT single crystal exhibits much finer domain boundary structure prior to the magnetic loadings. Upon the magnetic loadings, more domain variants are induced via the phase transition in PMN-33PT than that in PMN-28PT single crystal. The finer domain band structure and more domain variants contribute to stronger piezoelectric activity. As a result, the composite of PMN-33PT/Terfenol-D manifests a stronger ME coupling than PMN-28PT/Terfenol-D composite.

  7. Examination of the possibility of negative capacitance using ferroelectric materials in solid state electronic devices.

    PubMed

    Krowne, C M; Kirchoefer, S W; Chang, W; Pond, J M; Alldredge, L M B

    2011-03-09

    We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics. A basic equation governing all small signal behavior is derived, a negative capacitance quality factor is defined based upon it, and thousands of carefully measured devices are evaluated. We show that no instance of negative capacitance occurs within our huge database. Furthermore, we demonstrate that highly nonlinear biasing behavior in a series stack could be misinterpreted as giving a negative capacitance.

  8. Electrospinning induced ferroelectricity in poly(vinylidene fluoride) fibers.

    PubMed

    Baji, Avinash; Mai, Yiu-Wing; Li, Qian; Liu, Yun

    2011-08-01

    Poly(vinylidene fluoride) (PVDF) fibers with diameters ranging from 70 to 400 nm are produced by electrospinning and the effect of fiber size on the ferroelectric β-crystalline phase is determined. Domain switching and associated ferro-/piezo-electric properties of the electrospun PVDF fibers were also determined. The fibers showed well-defined ferroelectric and piezoelectric properties.

  9. Electrospinning induced ferroelectricity in poly(vinylidene fluoride) fibers

    NASA Astrophysics Data System (ADS)

    Baji, Avinash; Mai, Yiu-Wing; Li, Qian; Liu, Yun

    2011-08-01

    Poly(vinylidene fluoride) (PVDF) fibers with diameters ranging from 70 to 400 nm are produced by electrospinning and the effect of fiber size on the ferroelectric β-crystalline phase is determined. Domain switching and associated ferro-/piezo-electric properties of the electrospun PVDF fibers were also determined. The fibers showed well-defined ferroelectric and piezoelectric properties.

  10. Ferroelectric functionality in SrTiO3/Si heterojunctions

    NASA Astrophysics Data System (ADS)

    Yu, H. L.; Wu, Y. Z.; Jiang, X. F.; Cai, M. Q.; Gu, L. P.; Yang, G. W.

    2013-11-01

    By the first-principles calculations, various SrTiO3/Si interface architectures have been studied in this work and the computed results showed that the stable ferroelectricity can be realized in the SrTiO3/Si system. The Si/SrO interface architecture with the Si-O configuration showed predominately the ferroelectric nature and the height of the potential barrier between the negative and positive poled states (0.77 eV per interfacial unit cell). The presence of the covalent bond between the substrate Si and O of SrO layer adjacent to the substrate Si leads to the disappearance of the electronic dipoles at the interface, and the reason is that the Si-O configuration of the Si/SrO interface architecture exhibits ferroelectric nature. In order to further understand the influence of the interfacial bonding nature on the ferroelectricity of the oxide layer, the BaTiO3/Si heterojunction with the same interface architectures also have been studied. Indeed, the Si/BaO interface architecture with the Si-O configuration showed predominately the ferroelectric nature too. Certainly, a full SrO (or BaO) layer directly grown on the substrate Si is benefit to the realization of the ferroelectric functionality in the ferroelectric-Si heterojunction. These findings are useful for the understanding of the basic physics of the ferroelectric-Si heterojunction and the silicon-based functional oxide device design.

  11. Elastic Domain Wall Waves in Ferroelectric Ceramics and Single Crystals

    DTIC Science & Technology

    1988-07-01

    and identify by block number) " This report reviews research on acoustic guided waves along poling transitions in counter- poled ferroelectric ceramics...INTRODUCTION........................................ 1 II. GENERAL REVIEW . .. .......... ........... ... 2 (a) COUNTERPOLED CERAMICS...and better understanding of new ferroelectric materials. II. GENERAL REVIEW The initial phase of this project was an in-depth study of elastic wave

  12. Geometric shape control of thin film ferroelectrics and resulting structures

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    2000-01-01

    A monolithic crystalline structure and a method of making involves a semiconductor substrate, such as silicon, and a ferroelectric film, such as BaTiO.sub.3, overlying the surface of the substrate wherein the atomic layers of the ferroelectric film directly overlie the surface of the substrate. By controlling the geometry of the ferroelectric thin film, either during build-up of the thin film or through appropriate treatment of the thin film adjacent the boundary thereof, the in-plane tensile strain within the ferroelectric film is relieved to the extent necessary to permit the ferroelectric film to be poled out-of-plane, thereby effecting in-plane switching of the polarization of the underlying substrate material. The method of the invention includes the steps involved in effecting a discontinuity of the mechanical restraint at the boundary of the ferroelectric film atop the semiconductor substrate by, for example, either removing material from a ferroelectric film which has already been built upon the substrate, building up a ferroelectric film upon the substrate in a mesa-shaped geometry or inducing the discontinuity at the boundary by ion beam deposition techniques.

  13. Future Development of Dense Ferroelectric Memories for Space Applications

    NASA Technical Reports Server (NTRS)

    Philpy, Stephen C.; Derbenwick, Gary F.

    2001-01-01

    The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

  14. Ferroelectrics: A pathway to switchable surface chemistry and catalysis

    NASA Astrophysics Data System (ADS)

    Kakekhani, Arvin; Ismail-Beigi, Sohrab; Altman, Eric I.

    2016-08-01

    It has been known for more than six decades that ferroelectricity can affect a material's surface physics and chemistry thereby potentially enhancing its catalytic properties. Ferroelectrics are a class of materials with a switchable electrical polarization that can affect surface stoichiometry and electronic structure and thus adsorption energies and modes; e.g., molecular versus dissociative. Therefore, ferroelectrics may be utilized to achieve switchable surface chemistry whereby surface properties are not fixed but can be dynamically controlled by, for example, applying an external electric field or modulating the temperature. Several important examples of applications of ferroelectric and polar materials in photocatalysis and heterogeneous catalysis are discussed. In photocatalysis, the polarization direction can control band bending at water/ferroelectric and ferroelectric/semiconductor interfaces, thereby facilitating charge separation and transfer to the electrolyte and enhancing photocatalytic activity. For gas-surface interactions, available results suggest that using ferroelectrics to support catalytically active transition metals and oxides is another way to enhance catalytic activity. Finally, the possibility of incorporating ferroelectric switching into the catalytic cycle itself is described. In this scenario, a dynamic collaboration of two polarization states can be used to drive reactions that have been historically challenging to achieve on surfaces with fixed chemical properties (e.g., direct NOx decomposition and the selective partial oxidation of methane). These predictions show that dynamic modulation of the polarization can help overcome some of the fundamental limitations on catalytic activity imposed by the Sabatier principle.

  15. Fabrication of Glassy and Crystalline Ferroelectric Oxide by Containerless Processing

    NASA Astrophysics Data System (ADS)

    Yoda, Shinichi

    1. Instruction Much effort has been devoted to forming bulk glass from the melt of ferroelectric crystalline materials without adding any network-forming oxides such as SiO2 due to the potential for producing transparent glass ceramics with high dielectric constant and enhanced piezoelectric, pyroelectric and electro-optic effects. However, they require a higher cooling rate than glass formed by conventional techniques. Therefore, only amorphous thin-films have been formed, using rapid quenching with a cooling rate >105 K/s. The containerless processing is an attractive synthesis technique as it can prevent melt contamination, minimize heterogeneous nucleation, and allow melt to achieve deep undercooling for forming metastable phase and glassy material. Recently a new ferroelectric materiel, monoclinic BaTi2 O5 , with Currie temperature as 747 K was reported. In this study, we fabricated a bulk BaTi2 O5 glass from melt using containerless processing to study the phase relations and ferroelectric properties of BaTi2 O5 . To our knowledge, this was the first time that a bulk glass of ferroelectric material was fabricated from melt without adding any network-forming oxide. 2. Experiments BaTi2 O5 sphere glass with 2mm diameter was fabricated using containerless processing in an Aerodynamic Levitation Furnace (ALF). The containerless processing allowed the melt to achieve deep undercooling for glass forming. High purity commercial BaTiO3 and TiO2 powders were mixed with a mole ratio of 1:1 and compressed into rods and then sintered at 1427 K for 10 h. Bulk samples with a mass of about 20 mg were cut from the rod, levitated with the ALF, and then melted by a CO2 laser beam. After quenching with a cooling rate of about 1000 K/s, 2 mm diameter sphere glass could be obtained. To analyze the glass structure, a high-energy x-ray diffraction experiment was performed using an incident photon energy of 113.5 keV at the high-energy x-ray diffraction beamline BL04B2 of SPring-8

  16. Nanomanufacturing and analysis of novel continuous ferroelectric PVDF and P(VDF-TrFE) nanofibers

    NASA Astrophysics Data System (ADS)

    Ren, Xi

    Poly(vinylidene fluoride) (PVDF) and PVDF copolymers are well known for their ferroelectric and piezoelectric properties. Currently, they are mainly used in applications in the form of films. Thin PVDF films have been shown to possess unique ferroelectric properties in the nanoscale range. However, their two-dimensional nature limits their applicability in active engineering materials and structures. One-dimensional PVDF nanofibers can be expected to combine ferroelectric behavior with enhanced mechanical properties and ultrahigh flexibility providing critical advantages for applications. In this work, novel continuous PVDF nanofibers were nanomanufactured and systematically studied for the first time. Nanofibers from PVDF and P(VDF-TrFE) copolymer with several molecular weights and co-polymer compositions were manufactured by electrospinning. The method consists of spinning polymer solutions in high electric fields. Effects of process parameters on nanofiber diameters and morphology were studied. Resulting nanofibers were characterized by FE-SEM, TEM, XRD, FTIR, DSC and TGA. Effects of annealing on copolymer nanofibers were analyzed. Nanofiber-reinforced composites were manufactured and their polarization behavior studied using a specially designed experimental device. A number of pioneering observations and discoveries were made as a result of this analysis. For example, analysis of crystalline structure of PVDF nanofibers showed that the initial a phase of the PVDF raw material was converted to beta phase during electrospinning. This result is very encouraging as the beta phase is primarily responsible for the piezo- and ferroelectric behavior of PVDF polymers. It was also shown for the first time that nanofabricated P(VDF-TrFE) nanofibers exhibited distinct Curie points and different structures than their raw materials. Annealing was shown to be an effective way to modify properties of P(VDF-TrFE) co-polymer nanofibers. Overall, the results demonstrated for the

  17. Dielectric and Elastic Properties of Mixed Ferroelectric Material Potassium TANTALUM(1-X) Niobium(x) Oxide

    NASA Astrophysics Data System (ADS)

    Wang, Xiaomei

    Ferroelectricity is one of the important fields in solid state physics because of its scientific and technological significance. This dissertation describes dielectric and elastic properties of the ferroelectric system KTa_{1-x}Nb_{x}O _3 (KTN) with niobium in the concentration range 1.2% ~ 16%. The occurrence and the nature of the phase transition in mixed ferroelectric systems is an intriguing topic due to the introduction of configurational disorder. Experimental results have shown that the critical temperature T _{c} in the KTN system strongly depends on the concentration of Nb and that the transverse optic soft mode frequency decreases as the concentration of Nb increases. However, the origin of the phase transition in this system is not clearly known. In particular, it is not yet clear whether or not the transition is driven by a soft mode and how the nature of the transition evolves as the Nb concentration is changed. This dissertation describes experimental work on the dielectric and elastic behaviors of the KTN system. The results on the linear and the nonlinear dielectric constants and on the electric polarization of KTN reveal (a) the occurrence of a structural transition with the appearance of ferroelectric macroregions at T_{c }, even for relatively low impurity concentrations (b) the presence of polar microregions significantly above T_{c}. The phase transition in KTN is driven by the interaction between effective dipolar moments d* rather than a soft mode. Our experimental results also reveal the coexistence of both dipolar glass like and ferroelectric behaviors in KTN with low Nb concentrations. Elastic results obtained on KTN provide direct evidence of the two distinct stages which the transition go through when approaching the critical temperature T _{c}. The ultrasonic measurements of the longitudinal elastic constant C_ {11} shows the softening of C _{11} with a (T-T_ {c})^{-mu} dependence at intermediate temperature in the first stage. In the

  18. High-order face-shear modes of relaxor-PbTiO3 crystals for piezoelectric motor applications

    NASA Astrophysics Data System (ADS)

    Ci, Penghong; Liu, Guoxi; Chen, Zhijiang; Zhang, Shujun; Dong, Shuxiang

    2014-06-01

    The face-shear vibration modes of [011] poled Zt ± 45° cut relaxor-PT crystals and their applications for linear piezoelectric motors were investigated. Unlike piezoelectric ceramics, the rotated crystal was found to exhibit asymmetric face-shear deformations, and its two high-order face-shear modes degraded into two non-isomorphic modes. As an application example, a standing wave ultrasonic linear motor (10 × 10 × 2 mm3) operating in high-order face-shear vibration modes was developed. The motor exhibits a large driving force (1.5 N) under a low driving voltage (22 Vpp). These findings could provide guidance for design of crystal resonance devices.

  19. Ferroelectric domain structure of Pb(Zr /sub 52/Ti /sub 48/)O/sub 3/

    SciTech Connect

    Goo, E.K.; Mishra, R.K.

    1980-08-01

    Ferroelectric domains are twins that are formed when PZT undergoes a phase transformation from a non-ferroelectric cubic phase to a ferroelectric tetragonal phase upon cooling below approx. 375/sup 0/C. The tetragonal phase is spontaneously polarized in the direction of c-axis, making each twin a ferroelectric domain.

  20. Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

    NASA Technical Reports Server (NTRS)

    Eskridge, Michael; Gui, Xiao; MacLeod, Todd; Ho, Fat D.

    2011-01-01

    Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.