Stability and Physical Accuracy Analysis of the Numerical Solutions to Wigner-Poisson Modeling of Resonant Tunneling Diodes

DTIC Science & Technology

2013-03-22

discrete Wigner function is periodic in momentum space. The periodicity follows from the Fourier transform of the density matrix. The inverse...resonant-tunneling diode . The Green function method has been one of alternatives. Another alternative was to utilize the Wigner function . The Wigner ... function approach to the simulation of a resonant-tunneling diode offers many advantages. In the limit of the classical physics the Wigner equation

Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

NASA Technical Reports Server (NTRS)

Mehdi, I.; East, J. R.; Haddad, G. I.

1991-01-01

The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors.

Microwave noise measurements on double barrier resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Kwaspen, J. J. M.; Heyker, H. C.; Demarteau, J. I. M.; Vanderoer, T. G.

1990-12-01

Double Barrier Resonant Tunneling (DBRT) diodes have nonlinear current voltage characteristics with Negative Differential Resistance (NDR) regions. Biased in one of these NDR regions, the DBRT diode can be used for microwave amplification purposes, so knowledge of the diode's noise behavior is important from a physics point of view. Two noise parameter measurement methods were developed in which the DBRT diode is used in a reflection amplifier configuration with circulator to transform the active one port device into an active two port with separate input and output ports. The Noise Figure (NF) of the DBRT diode must be deembedded from the NF of the reflection amplifier. An equation for the NF of the DBRT diode is derived. Two different measurement methods are used. A (complicated) more exact method uses the measured S parameters of the actual circulator and accounts for reflections at the noise source, NF meter and DBRT diode. A mathematically simple method (three versions) uses only scalar data collected by the NF meter. The results from these two methods are compared and they coincide well.

Realization of a double-barrier resonant tunneling diode for cavity polaritons.

PubMed

Nguyen, H S; Vishnevsky, D; Sturm, C; Tanese, D; Solnyshkov, D; Galopin, E; Lemaître, A; Sagnes, I; Amo, A; Malpuech, G; Bloch, J

2013-06-07

We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

Resonant tunnelling diode based high speed optoelectronic transmitters

NASA Astrophysics Data System (ADS)

Wang, Jue; Rodrigues, G. C.; Al-Khalidi, Abdullah; Figueiredo, José M. L.; Wasige, Edward

2017-08-01

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

Resonant tunneling diode oscillators for optical communications

NASA Astrophysics Data System (ADS)

Watson, Scott; Zhang, Weikang; Wang, Jue; Al-Khalidi, Abdullah; Cantu, Horacio; Figueiredo, Jose; Wasige, Edward; Kelly, Anthony E.

2017-08-01

The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

2017-10-01

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

NASA Technical Reports Server (NTRS)

Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Molvar, K. M.; Soderstrom, J. R.

1991-01-01

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W/sq cm, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.

Resonant tunneling diode based on band gap engineered graphene antidot structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palla, Penchalaiah, E-mail: penchalaiah.palla@vit.ac.in; Ethiraj, Anita S.; Raina, J. P.

The present work demonstrates the operation and performance of double barrier Graphene Antidot Resonant Tunnel Diode (DBGA-RTD). Non-Equilibrium Green’s Function (NEGF) frame work with tight-binding Hamiltonian and 2-D Poisson equations were solved self-consistently for device study. The interesting feature in this device is that it is an all graphene RTD with band gap engineered graphene antidot tunnel barriers. Another interesting new finding is that it shows negative differential resistance (NDR), which involves the resonant tunneling in the graphene quantum well through both the electron and hole bound states. The Graphene Antidot Lattice (GAL) barriers in this device efficiently improved themore » Peak to Valley Ratio to approximately 20 even at room temperature. A new fitting model is developed for the number of antidots and their corresponding effective barrier width, which will help in determining effective barrier width of any size of actual antidot geometry.« less

Sub-terahertz and terahertz microstrip resonant-tunneling-diode oscillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feiginov, Michael, E-mail: feiginov.michael@canon.co.jp

We present a theoretical analysis of traveling-wave microstrip resonant-tunneling-diode (RTD) oscillators. Such oscillators are similar to terahertz (THz) quantum-cascade lasers (QCLs) with a metal-metal waveguide and with just the active part of a single QCL period (an RTD) as their active core. Assuming realistic parameters of RTDs, we show that the microstrip RTD oscillators should be working at sub-THz and THz frequencies. Contrary to the contemporary THz QCLs, RTD microstrips are room-temperature oscillators. The major loss- and gain-enhancement mechanisms in RTD microstrips are identified.

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabe, Michiharu, E-mail: tabe.michiharu@shizuoka.ac.jp; Tan, Hoang Nhat; Mizuno, Takeshi

We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of amore » donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.« less

Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

NASA Astrophysics Data System (ADS)

Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.

2011-05-01

Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

NASA Astrophysics Data System (ADS)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org; Brown, E. R.

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

1991-01-01

InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

NASA Astrophysics Data System (ADS)

Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

2017-11-01

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Growden, Tyler A.; Zhang, Weidong; Brown, Elliott R.; Storm, David F.; Hansen, Katurah; Fakhimi, Parastou; Meyer, David J.; Berger, Paul R.

2018-01-01

We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370-385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.

Terahertz Sensor Using Photonic Crystal Cavity and Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Okamoto, Kazuma; Tsuruda, Kazuisao; Diebold, Sebastian; Hisatake, Shintaro; Fujita, Masayuki; Nagatsuma, Tadao

2017-09-01

In this paper, we report on a terahertz (THz) sensing system. Compared to previously reported systems, it has increased system sensitivity and reduced size. Both are achieved by using a photonic crystal (PC) cavity as a resonator and compact resonant tunneling diodes (RTDs) as signal source and as detector. The measured quality factor of the PC cavity is higher than 10,000, and its resonant frequency is 318 GHz. To demonstrate the operation of the refractive index sensing system, dielectric tapes of various thicknesses are attached to the PC cavity and the change in the resonator's refractive index is measured. The figure of merit of refractive index sensing using the developed system is one order higher than that of previous studies, which used metallic metamaterial resonators. The frequency of the RTD-based source can be swept from 316 to 321 GHz by varying the RTD direct current voltage. This effect is used to realize a compact frequency tunable signal source. Measurements using a commercial signal source and detector are carried out to verify the accuracy of the data obtained using RTDs as a signal source and as a detector.

Memory Applications Using Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishakov, K. S., E-mail: ksgrishakov@yahoo.com; Elesin, V. F.

A numerical solution to the problem of transient processes in a resonant tunneling diode featuring a current–voltage characteristic with hysteresis is found for the first time in the context of a coherent model (based on the coupled Schrödinger and Poisson equations) taking into account the Fermi distribution of electrons. The transitions from the high-current to the low-current state and vice versa, which result from the existence of hysteresis and are of great practical importance for ultrafast switches based on resonant tunneling diodes, are studied in detail. It is shown that the transition times for such processes initiated by the applicationmore » of a small voltage can significantly exceed the characteristic time ℏ/Γ (where G is the width of the resonance level). It is established for the first time that the transition time can be reduced and made as short as the characteristic time ℏ/Γ by applying a sufficiently high voltage. For the parameters of the resonant-tunnelingdiode structure considered in this study, the required voltage is about 0.01 V.« less

High P/V ratio of GaInAs/InP resonant tunneling diode grown by OMVPE

NASA Astrophysics Data System (ADS)

Sekiguchi, Tomonori; Miyamoto, Yasuyuki; Furuya, Kazuhito

1992-11-01

This paper reports higher peak-to-valley current (P/V) ratio in GaInAs/InP resonant tunneling diode (RTD) than ever. In organomettalic vapor phase epitaxy, the P/V ratio depends strongly on the partial pressure of the group V gas. The obtained P/V ratios are 9.7 and 7.4 at 4 and 77 K, respectively. The width of the resonance level is 11 meV at 4 K.

Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature

NASA Technical Reports Server (NTRS)

Brown, E. R.; Sollner, T. C. L. G.; Goodhue, W. D.; Parker, C. D.

1987-01-01

A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

NASA Technical Reports Server (NTRS)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

A wide-range variable-frequency resonant tunneling diode oscillator using a variable resonator suitable for simple MEMS process

NASA Astrophysics Data System (ADS)

Yamashita, Takashi; Nakano, Daisuke; Mori, Masayuki; Maezawa, Koichi

2018-04-01

A resonant tunneling diode oscillator having a wide frequency variation range based on a novel MEMS resonator was proposed, which exploits the change in the signal propagation velocity on a coplanar waveguide according to a movable ground plane. First, we discussed the velocity modulation mechanism, and clarified the importance of the dielectric constant of the substrate. Then, a prototype device oscillating in a 10 to 20 GHz frequency range was fabricated to demonstrate the basic operation. A large and continuous increase in the oscillation frequency of about two times was achieved with this device. This is promising for various applications including THz spectroscopy.

Resonant tunnelling diode terahertz sources for broadband wireless communications

NASA Astrophysics Data System (ADS)

Wasige, Edward; Alharbi, Khalid H.; Al-Khalidi, Abdullah; Wang, Jue; Khalid, Ata; Rodrigues, Gil C.; Figueiredo, José

2017-02-01

This paper will discuss resonant tunnelling diode (RTD) sources being developed on a European project iBROW (ibrow.project.eu) to enable short-range multi-gigabit wireless links and microwave-photonic interfaces for seamless links to the optical fibre backbone network. The practically relevant output powers are at least 10 mW at 90 GHz, 5 mW at 160 GHz and 1 mW at 300 GHz and simulation and some experimental results show that these are feasible in RTD technology. To date, 75 - 315 GHz indium phosphide (InP) based RTD oscillators with relatively high output powers in the 0.5 - 1.1 mW range have been demonstrated on the project. They are realised in various circuit topologies including those that use a single RTD device, 2 RTD devices and up to 4 RTD devices for increasingly higher output power. The oscillators are realised using only photolithography by taking advantage of the large micron-sized but broadband RTD devices. The paper will also describe properties of RTD devices as photo-detectors which makes this a unified technology that can be integrated into both ends of a wireless link, namely consumer portable devices and fibre-optic supported base-stations (since integration with laser diodes is also possible).

A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz

NASA Technical Reports Server (NTRS)

Brown, E. R.; Parker, C. D.; Molvar, K. M.; Calawa, A. R.; Manfra, M. J.

1992-01-01

We have fabricated and characterized a quasioptically stabilized resonant-tunneling-diode (RTD) oscillator having attractive performance characteristics for application as a radiometric local oscillator. The fundamental frequency of the oscillator is tunable from about 200 to 215 GHz, the instantaneous linewidth is between 10 and 20 kHz, and the output power across the tuning band is about 50 micro-W. The narrow linewidth and fine tuning of the frequency are made possible by a scanning semiconfocal open cavity which acts as the high-Q resonator for the oscillator. The cavity is compact, portable, and insensitive to vibration and temperature variation. The total dc power consumption (RTD plus bias supply) is only 10 mW. The present oscillator provides the highest power obtained to date from an RTD above 200 GHz. We attribute this partly to the use of the quasioptical resonator, but primarily to the quality of the RTD. It is fabricated from the In(0.53)Ga(0.47)As/AlAs materials system, which historically has yielded the best overall resonant-tunneling characteristics of any material system. The RTD active area is 4 sq microns, and the room-temperature peak current density and peak-to-valley current ratio are 2.5x10(exp 5) A cm(exp -2) and 9, respectively. The RTD is mounted in a WR-3 standard-height rectangular waveguide and is contacted across the waveguide by a fine wire that protrudes through a via hole in a Si3N4 'honeycomb' overlayer. We estimate that the theoretical maximum frequency of oscillation of this RTD is approximately 1.1 THz, and that scaled-down versions of the same quasioptical oscillator design should operate in a fundamental mode up to frequencies of at least 500 GHz.

Excitability and optical pulse generation in semiconductor lasers driven by resonant tunneling diode photo-detectors.

PubMed

Romeira, Bruno; Javaloyes, Julien; Ironside, Charles N; Figueiredo, José M L; Balle, Salvador; Piro, Oreste

2013-09-09

We demonstrate, experimentally and theoretically, excitable nanosecond optical pulses in optoelectronic integrated circuits operating at telecommunication wavelengths (1550 nm) comprising a nanoscale double barrier quantum well resonant tunneling diode (RTD) photo-detector driving a laser diode (LD). When perturbed either electrically or optically by an input signal above a certain threshold, the optoelectronic circuit generates short electrical and optical excitable pulses mimicking the spiking behavior of biological neurons. Interestingly, the asymmetric nonlinear characteristic of the RTD-LD allows for two different regimes where one obtain either single pulses or a burst of multiple pulses. The high-speed excitable response capabilities are promising for neurally inspired information applications in photonics.

Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

NASA Astrophysics Data System (ADS)

Lee, Joon-Ho; Shin, Mincheol; Byun, Seok-Joo; Kim, Wangki

2018-03-01

Resonant-tunneling diodes (RTDs) with auxiliary quantum wells ( e.g., emitter prewell, subwell, and collector postwell) are studied using a Wigner transport equation (WTE) discretized by a thirdorder upwind differential scheme. A flat-band potential profile is used for the WTE simulation. Our calculations revealed functions of the auxiliary wells as follows: The prewell increases the current density ( J) and the peak voltage ( V p ) while decreasing the peak-to-valley current ratio (PVCR), and the postwell decreases J while increasing the PVCR. The subwell affects J and PVCR, but its main effect is to decrease V p . When multiple auxiliary wells are used, each auxiliary well contributes independently to the transport without producing side effects.

Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

NASA Astrophysics Data System (ADS)

Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

2017-12-01

Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

Tunable negative differential resistance in planar graphene superlattice resonant tunneling diode

NASA Astrophysics Data System (ADS)

Sattari-Esfahlan, S. M.; Fouladi-Oskuei, J.; Shojaei, S.

2017-04-01

Here, we study the negative differential resistance (NDR) of Dirac electrons in biased planar graphene superlattice (PGSL) and investigate the transport characteristics by adopted transfer matrix method within Landauer-Buttiker formalism. Our model device is based on one-dimensional Kronig-Penney type electrostatic potential in monolayer graphene deposited on a substrate, where the bias voltage is applied by two electrodes in the left and right. At Low bias voltages, we found that NDR appears due to breaking of minibands to Wannier-Stark ladders (WSLs). At the critical bias voltage, delocalization appeared by WS states leads to tunneling peak current in current-voltage (I-V) characteristics. With increasing bias voltage, crossing of rungs from various WSL results in multi-peak NDR. The results demonstrate that the structure parameters like barrier/well thickness and barrier height have remarkable effect on I-V characteristics of PGSL. In addition, Dirac gap enhances peak to valley (PVR) value due to suppressing Klein tunneling. Our results show that the tunable PVR in PGSL resonant tunneling diode can be achievable by structure parameters engineering. NDR at ultra-low bias voltages, such as 100 mV, with giant PVR of 20 is obtained. In our device, the multiple same NDR peaks with ultra-low bias voltage provide promising prospect for multi-valued memories and the low power nanoelectronic tunneling devices.

Inelastic tunnel diodes

NASA Technical Reports Server (NTRS)

Anderson, L. M. (Inventor)

1984-01-01

Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

Microwave and millimeter-wave resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. Gerhard; Brown, Elliott R.; Goodhue, W. D.

1987-01-01

Several demonstrated resonant tunneling devices including oscillators, mixers, multiplexers, and a variable negative resistance are discussed. Techniques of the millimeter/submillimeter regime are also discussed.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

Harmonic multiplication using resonant tunneling

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Correa, C. A.

1988-01-01

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Observation of millimeter-wave oscillations from resonant tunneling diodes and some theoretical considerations of ultimate frequency limits

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.; Brown, E. R.; Goodhue, W. D.; Le, H. Q.

1987-01-01

Recent observations of oscillation frequencies up to 56 GHz in resonant tunneling structures are discussed in relation to calculations by several authors of the ultimate frequency limits of these devices. It is found that calculations relying on the Wentzel-Kramers-Brillouin (WKB) approximation give limits well below the observed oscillation frequencies. Two other techniques for calculating the upper frequency limit were found to give more reasonable results. One method employs the solution of the time-dependent Schroedinger equation obtained by Kundrotas and Dargys (1986); the other uses the energy width of the transmission function for electrons through the double-barrier structure. This last technique is believed to be the most accurate since it is based on general results for the lifetime of any resonant state. It gives frequency limits on the order of 1 THz for two recently fabricated structures. It appears that the primary limitation of the oscillation frequency for double-barrier resonant-tunneling diodes is imposed by intrinsic device circuit parameters and by the transit time of the depletion layer rather than by time delays encountered in the double-barrier region.

Nanothermometer Based on Resonant Tunneling Diodes: From Cryogenic to Room Temperatures.

PubMed

Pfenning, Andreas; Hartmann, Fabian; Rebello Sousa Dias, Mariama; Castelano, Leonardo Kleber; Süßmeier, Christoph; Langer, Fabian; Höfling, Sven; Kamp, Martin; Marques, Gilmar Eugenio; Worschech, Lukas; Lopez-Richard, Victor

2015-06-23

Sensor miniaturization together with broadening temperature sensing range are fundamental challenges in nanothermometry. By exploiting a large temperature-dependent screening effect observed in a resonant tunneling diode in sequence with a GaInNAs/GaAs quantum well, we present a low dimensional, wide range, and high sensitive nanothermometer. This sensor shows a large threshold voltage shift of the bistable switching of more than 4.5 V for a temperature raise from 4.5 to 295 K, with a linear voltage-temperature response of 19.2 mV K(-1), and a temperature uncertainty in the millikelvin (mK) range. Also, when we monitor the electroluminescence emission spectrum, an optical read-out control of the thermometer is provided. The combination of electrical and optical read-outs together with the sensor architecture excel the device as a thermometer with the capability of noninvasive temperature sensing, high local resolution, and sensitivity.

Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Haoran; Yang, Lin'an, E-mail: layang@xidian.edu.cn; Hao, Yue

The resonant tunneling mechanism of the GaN based resonant tunneling diode (RTD) with an InGaN sub-quantum-well has been investigated by means of numerical simulation. At resonant-state, Electrons in the InGaN/InAlN/GaN/InAlN RTD tunnel from the emitter region through the aligned discrete energy levels in the InGaN sub-quantum-well and GaN main-quantum-well into the collector region. The implantation of the InGaN sub-quantum-well alters the dominant transport mechanism, increase the transmission coefficient and give rise to the peak current and peak-to-valley current ratio. We also demonstrate that the most pronounced negative-differential-resistance characteristic can be achieved by choosing appropriately the In composition of In{sub x}Ga{submore » 1−x}N at around x = 0.06.« less

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

NASA Astrophysics Data System (ADS)

Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

2017-10-01

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes.

PubMed

Lee, Kyeong Won; Jang, Chan Wook; Shin, Dong Hee; Kim, Jong Min; Kang, Soo Seok; Lee, Dae Hun; Kim, Sung; Choi, Suk-Ho; Hwang, Euyheon

2016-07-28

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations.

Investigations of 2.9-GHz Resonant Microwave-Sensitive Ag/MgO/Ge/Ag Tunneling Diodes

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Khanfar, H. K.

2013-12-01

In this work, a resonant microwave-sensitive tunneling diode has been designed and investigated. The device, which is composed of a magnesium oxide (MgO) layer on an amorphous germanium (Ge) thin film, was characterized by means of temperature-dependent current ( I)-voltage ( V), room-temperature differential resistance ( R)-voltage, and capacitance ( C)-voltage characteristics. The device resonating signal was also tested and evaluated at 2.9 GHz. The I- V curves reflected weak temperature dependence and a wide tunneling region with peak-to-valley current ratio of ˜1.1. The negative differential resistance region shifts toward lower biasing voltages as temperature increases. The true operational limit of the device was determined as 350 K. A novel response of the measured R- V and C- V to the incident alternating-current (ac) signal was observed at 300 K. Particularly, the response to a 100-MHz signal power ranging from the standard Bluetooth limit to the maximum output power of third-generation mobile phones reflects a wide range of tunability with discrete switching property at particular power limits. In addition, when the tunnel device was implanted as an amplifier for a 2.90-GHz resonating signal of the power of wireless local-area network (LAN) levels, signal gain of 80% with signal quality factor of 4.6 × 104 was registered. These remarkable properties make devices based on MgO-Ge interfaces suitable as electronic circuit elements for microwave applications, bias- and time-dependent electronic switches, and central processing unit (CPU) clocks.

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

DOE PAGES

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; ...

2016-12-28

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO 2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excitemore » infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.« less

Photon-phonon-enhanced infrared rectification in a two-dimensional nanoantenna-coupled tunnel diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew

The interplay of strong infrared photon-phonon coupling with electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast photon-assisted tunneling in metal-oxide-semiconductor (MOS) structures. Infrared active optical phonon modes in polar oxides lead to strong dispersion and enhanced electric fields at material interfaces. We find that the infrared dispersion of SiO 2 near a longitudinal optical phonon mode can effectively impedance match a photonic surface mode into a nanoscale tunnel gap that results in large transverse-field confinement. An integrated 2D nanoantenna structure on a distributed large-area MOS tunnel-diode rectifier is designed and built to resonantly excitemore » infrared surface modes and is shown to efficiently channel infrared radiation into nanometer-scale gaps in these MOS devices. This enhanced-gap transverse-electric field is converted to a rectified tunneling displacement current resulting in a dc photocurrent. We examine the angular and polarization-dependent spectral photocurrent response of these 2D nanoantenna-coupled tunnel diodes in the photon-enhanced tunneling spectral region. Lastly, our 2D nanoantenna-coupled infrared tunnel-diode rectifier promises to impact large-area thermal energy harvesting and infrared direct detectors.« less

Light-induced negative differential resistance in graphene/Si-quantum-dot tunneling diodes

PubMed Central

Lee, Kyeong Won; Jang, Chan Wook; Shin, Dong Hee; Kim, Jong Min; Kang, Soo Seok; Lee, Dae Hun; Kim, Sung; Choi, Suk-Ho; Hwang, Euyheon

2016-01-01

One of the interesing tunneling phenomena is negative differential resistance (NDR), the basic principle of resonant-tunneling diodes. NDR has been utilized in various semiconductor devices such as frequency multipliers, oscillators, relfection amplifiers, logic switches, and memories. The NDR in graphene has been also reported theoretically as well as experimentally, but should be further studied to fully understand its mechanism, useful for practical device applications. Especially, there has been no observation about light-induced NDR (LNDR) in graphene-related structures despite very few reports on the LNDR in GaAs-based heterostructures. Here, we report first observation of LNDR in graphene/Si quantum dots-embedded SiO2 (SQDs:SiO2) multilayers (MLs) tunneling diodes. The LNDR strongly depends on temperature (T) as well as on SQD size, and the T dependence is consistent with photocurrent (PC)-decay behaviors. With increasing light power, the PC-voltage curves are more structured with peak-to-valley ratios over 2 at room temperature. The physical mechanism of the LNDR, governed by resonant tunneling of charge carriers through the minibands formed across the graphene/SQDs:SiO2 MLs and by their nonresonant phonon-assisted tunneling, is discussed based on theoretical considerations. PMID:27465107

Electronic properties of core-shell nanowire resonant tunneling diodes

PubMed Central

2014-01-01

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping. PMID:25288912

Electronic properties of core-shell nanowire resonant tunneling diodes.

PubMed

Zervos, Matthew

2014-01-01

The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells <10 nm, and 5 nm InP barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping.

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

PubMed

Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying

2013-05-08

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Optically controlled resonant tunneling in a double-barrier diode

NASA Astrophysics Data System (ADS)

Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

1991-03-01

The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

Development of a Tunnel Diode Resonator technique for magnetic measurements in Electrostatic Levitation chamber

NASA Astrophysics Data System (ADS)

Spyrison, N. S.; Prommapan, P.; Kim, H.; Maloney, J.; Rustan, G. E.; Kreyssig, A.; Goldman, A. I.; Prozorov, R.

2011-03-01

The incorporation of the Tunnel Diode Resonator (TDR) technique into an ElectroStatic Levitation (ESL) apparatus was explored. The TDR technique is known to operate and behave well at low temperatures with careful attention to coil-sample positioning in a dark, shielded environment. With these specifications a frequency resolution of 10-9 in a few seconds counting time can be achieved. Complications arise when this technique is applied in the ESL chamber where a sample of molten metal is levitating less then 10 mm from the coil in a large electrostatic field. We have tested a variety of coils unconventional to TDR; including Helmholtz pairs and Archimedean spiral coils. Work was supported by the Nation Science Foundation under grant DMR-08-17157

Resonant tunneling through mixed quasibound states in a triple-well structure

NASA Technical Reports Server (NTRS)

Brown, E. R.; Parker, C. D.; Calawa, A. R.; Manfra, M. J.

1993-01-01

A triple-well resonant-tunneling structure made from the In(0.53)Ga(0.47)As/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in single-well structures. This NDR characteristic is attributed to resonant tunneling through mixed quasi-bound states. A diode made from this structure is used to generate a nearly constant power of 0.5 mW up to 16 GHz.

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Md Zawawi, Mohamad Adzhar; Missous, Mohamed

2017-12-01

A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

PubMed Central

2013-01-01

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors. PMID:23651496

Resonant tunneling structures based on epitaxial graphene on SiC

NASA Astrophysics Data System (ADS)

Nguyen, V. Hung; Bournel, A.; Dollfus, P.

2011-12-01

Recently some experiments have suggested that graphene epitaxially grown on SiC can exhibit an energy bandgap of 260 meV, which enhances the potential of this material for electronic applications. On this basis, we propose to use spatial doping to generate graphene-on-SiC double-barrier structures. The non-equilibrium Green's function technique for solving the massive Dirac model is applied to highlight typical transport phenomena such as the electron confinement and the resonant tunneling effects. The I-V characteristics of graphene resonant tunneling diodes were then investigated and the effect of different device parameters was discussed. It is finally shown that this kind of double-barrier junction provides an efficient way to confine the charge carriers in graphene and to design graphene resonant tunneling structures.

Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Awan, I. T.; Galvão Gobato, Y.; Galeti, H. V. A.

In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices formore » spintronic applications such as a high-frequency spin-oscillators.« less

Nonlinear optical detection of terahertz-wave radiation from resonant tunneling diodes.

PubMed

Takida, Yuma; Nawata, Kouji; Suzuki, Safumi; Asada, Masahiro; Minamide, Hiroaki

2017-03-06

The sensitive detection of terahertz (THz)-wave radiation from compact sources at room temperature is crucial for real-world THz-wave applications. Here, we demonstrate the nonlinear optical detection of THz-wave radiation from continuous-wave (CW) resonant tunneling diodes (RTDs) at 0.58, 0.78, and 1.14 THz. The up-conversion process in a MgO:LiNbO₃ crystal under the noncollinear phase-matching condition offers efficient wavelength conversion from a THz wave to a near-infrared (NIR) wave that is detected using a commercial NIR photodetector. The minimum detection limit of CW THz-wave power is as low as 5 nW at 1.14 THz, corresponding to 2-aJ energy and 2.7 × 10³ photons within the time window of a 0.31-ns pump pulse. Our results show that the input frequency and power of RTD devices can be calibrated by measuring the output wavelength and energy of up-converted waves, respectively. This optical detection technique for compact electronic THz-wave sources will open up a new opportunity for the realization of real-world THz-wave applications.

Efficient single photon detection by quantum dot resonant tunneling diodes.

PubMed

Blakesley, J C; See, P; Shields, A J; Kardynał, B E; Atkinson, P; Farrer, I; Ritchie, D A

2005-02-18

We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.

Constant-current regulator improves tunnel diode threshold-detector performance

NASA Technical Reports Server (NTRS)

Cancro, C. A.

1965-01-01

Grounded-base transistor is placed in a tunnel diode threshold detector circuit, and a bias voltage is applied to the tunnel diode. This provides the threshold detector with maximum voltage output and overload protection.

Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hinkov, Borislav; Schwarz, Benedikt; Harrer, Andreas; Ristanic, Daniela; Schrenk, Werner; Hugues, Maxime; Chauveau, Jean-Michel; Strasser, Gottfried

2017-02-01

The terahertz (THz) spectral range (lambda 30µm - 300µm) is also known as the "THz-gap" because of the lack of compact semiconductor devices. Various real-world applications would strongly benefit from such sources like trace-gas spectroscopy or security-screening. A crucial step is the operation of THz-emitting lasers at room temperature. But this seems out of reach with current devices, of which GaAs-based quantum cascade lasers (QCLs) seem to be the most promising ones. They are limited by the parasitic, non-optical LO-phonon transitions (36meV in GaAs), being on the same order as the thermal energy at room temperature (kT = 26meV). This can be solved by using larger LO-phonon materials like ZnO (E_LO = 72meV). But to master the fabrication of ZnO-based QC structures, a high quality epitaxial growth is crucial followed by a well-controlled fabrication process including ZnO/ZnMgO etching. We use devices grown on m-plane ZnO-substrate by molecular beam epitaxy. They are patterned by reactive ion etching in a CH4-based chemistry (CH4:H2:Ar/30:3:3 sccm) into 50μm to 150μm square mesas. Resonant tunneling diode structures are investigated in this geometry and are presented including different barrier- and well-configurations. We extract contact resistances of 8e-5 Omega cm^2 for un-annealed Ti/Au contacts and an electron mobility of above 130cm^2/Vs, both in good agreement with literature. Proving that resonant electron tunneling can be achieved in ZnO is one of the crucial building blocks of a QCL. This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 665107.

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

NASA Astrophysics Data System (ADS)

Asada, M.; Suzuki, S.; Fukuma, T.

2017-11-01

The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

Resonant tunneling diodes as energy-selective contacts used in hot-carrier solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeda, Yasuhiko, E-mail: takeda@mosk.tytlabs.co.jp; Sugimoto, Noriaki; Ichiki, Akihisa

2015-09-28

Among the four features unique to hot-carrier solar cells (HC-SCs): (i) carrier thermalization time and (ii) carrier equilibration time in the absorber, (iii) energy-selection width and (iv) conductance of the energy-selective contacts (ESCs), requisites of (i)-(iii) for high conversion efficiency have been clarified. We have tackled the remaining issues related to (iv) in the present study. The detailed balance model of HC-SC operation has been improved to involve a finite value of the ESC conductance to find the required values, which in turn has been revealed to be feasible using resonant tunneling diodes (RTDs) consisting of semiconductor quantum dots (QDs)more » and quantum wells (QWs) by means of a formulation to calculate the conductance of the QD- and QW-RTDs derived using the rigorous solutions of the effective-mass Hamiltonians. Thus, all of the four requisites unique to HC-SCs to achieve high conversion efficiency have been elucidated, and the two requisites related to the ESCs can be fulfilled using the QD- and QW-RTDs.« less

Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

2018-05-01

We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications

NASA Astrophysics Data System (ADS)

Rothmayr, F.; Pfenning, A.; Kistner, C.; Koeth, J.; Knebl, G.; Schade, A.; Krueger, S.; Worschech, L.; Hartmann, F.; Höfling, S.

2018-04-01

We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 μm, and the RTD-PDs show peak-to-valley current ratios up to 4.3 with a peak current density of 12 A/cm-2. The incorporation of the quaternary absorption layer enables the RTD-PDs to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm, respectively, the RTD-PDs reach responsivities up to 0.97 A/W. Thus, RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.

PubMed

Mishchenko, A; Tu, J S; Cao, Y; Gorbachev, R V; Wallbank, J R; Greenaway, M T; Morozov, V E; Morozov, S V; Zhu, M J; Wong, S L; Withers, F; Woods, C R; Kim, Y-J; Watanabe, K; Taniguchi, T; Vdovin, E E; Makarovsky, O; Fromhold, T M; Fal'ko, V I; Geim, A K; Eaves, L; Novoselov, K S

2014-10-01

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

Resonant torus-assisted tunneling.

PubMed

Yi, Chang-Hwan; Yu, Hyeon-Hye; Kim, Chil-Min

2016-01-01

We report a new type of dynamical tunneling, which is mediated by a resonant torus, i.e., a nonisolated periodic orbit. To elucidate the phenomenon, we take an open elliptic cavity and show that a pair of resonances localized on two classically disconnected tori tunnel through a resonant torus when they interact with each other. This so-called resonant torus-assisted tunneling is verified by using Husimi functions, corresponding actions, Husimi function distributions, and the standard deviations of the actions.

High-frequency resonant-tunneling oscillators

NASA Technical Reports Server (NTRS)

Brown, E. R.; Parker, C. D.; Calawa, A. R.; Manfra, M. J.; Chen, C. L.

1991-01-01

Advances in high-frequency resonant-tunneling-diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. Recent results obtained with In0.53Ga0.47As/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by series resistance, and that the power density is limited by low peak-to-valley current ratio.

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Lin'an, E-mail: layang@xidian.edu.cn; Li, Yue; Wang, Ying

Asymmetric quantum-well (QW) structures including the asymmetric potential-barrier and the asymmetric potential-well are proposed for AlGaN/GaN/AlGaN resonant tunneling diodes (RTDs). Theoretical investigation gives that an appropriate decrease in Al composition and thickness for emitter barrier as well as an appropriate increase of both for collector barrier can evidently improve the negative-differential-resistance characteristic of RTD. Numerical simulation shows that RTD with a 1.5-nm-thick GaN well sandwiched by a 1.3-nm-thick Al{sub 0.15}Ga{sub 0.85}N emitter barrier and a 1.7-nm-thick Al{sub 0.25}Ga{sub 0.75}N collector barrier can yield the I-V characteristic having the peak current (Ip) and the peak-to-valley current ratio (PVCR) of 0.39 A andmore » 3.6, respectively, about double that of RTD with a 1.5-nm-thick Al{sub 0.2}Ga{sub 0.8}N for both barriers. It is also found that an introduction of InGaN sub-QW into the diode can change the tunneling mode and achieve higher transmission coefficient of electron. The simulation demonstrates that RTD with a 2.8-nm-thick In{sub 0.03}Ga{sub 0.97}N sub-well in front of a 2.0-nm-thick GaN main-well can exhibit the I-V characteristic having Ip and PVCR of 0.07 A and 11.6, about 7 times and double the value of RTD without sub-QW, respectively. The purpose of improving the structure of GaN-based QW is to solve apparent contradiction between the device structure and the device manufacturability of new generation RTDs for sub-millimeter and terahertz applications.« less

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. Itmore » is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.« less

Interband Lateral Resonant Tunneling Transistor.

DTIC Science & Technology

1994-11-14

INTERBAND LATERAL RESONANT TUNNELING TRANSISTOR 10 BACKGROUND OF THE INVENTION Field of the Invention This invention pertains to a tunneling transistor...and in 15 particular to an interband lateral resonant tunneling transistor. Description of Related Art Conventional semiconductor technologies are... interband lateral resonant tunneling transistor along the cross-section B-B of Figure 2c. Figure 4 is another preferred embodiment cross-sectional 20

Subterahertz acoustical pumping of electronic charge in a resonant tunneling device.

PubMed

Young, E S K; Akimov, A V; Henini, M; Eaves, L; Kent, A J

2012-06-01

We demonstrate that controlled subnanosecond bursts of electronic charge can be transferred through a resonant tunneling diode by successive picosecond acoustic pulses. The effect exploits the nonlinear current-voltage characteristics of the device and its asymmetric response to the compressive and tensile components of the strain pulse. This acoustoelectronic pump opens new possibilities for the control of quantum phenomena in nanostructures.

Circular polarization in a non-magnetic resonant tunneling device.

PubMed

Dos Santos, Lara F; Gobato, Yara Galvão; Teodoro, Márcio D; Lopez-Richard, Victor; Marques, Gilmar E; Brasil, Maria Jsp; Orlita, Milan; Kunc, Jan; Maude, Duncan K; Henini, Mohamed; Airey, Robert J

2011-01-25

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Circular polarization in a non-magnetic resonant tunneling device

PubMed Central

2011-01-01

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects. PMID:21711613

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection

PubMed Central

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-01-01

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn “photon-switches” to “OFF” state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished. PMID:25797442

Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

PubMed

Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

2015-03-23

Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

Resonant Tunneling Analog-To-Digital Converter

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Seabaugh, A. C.; Hellums, J.; Taddiken, A.; Tang, H.; Teng, J.; vanderWagt, J. P. A.

1995-01-01

As sampling rates continue to increase, current analog-to-digital converter (ADC) device technologies will soon reach a practical resolution limit. This limit will most profoundly effect satellite and military systems used, for example, for electronic countermeasures, electronic and signal intelligence, and phased array radar. New device and circuit concepts will be essential for continued progress. We describe a novel, folded architecture ADC which could enable a technological discontinuity in ADC performance. The converter technology is based on the integration of multiple resonant tunneling diodes (RTD) and hetero-junction transistors on an indium phosphide substrate. The RTD consists of a layered semiconductor hetero-structure AlAs/InGaAs/AlAs(2/4/2 nm) clad on either side by heavily doped InGaAs contact layers. Compact quantizers based around the RTD offer a reduction in the number of components and a reduction in the input capacitance Because the component count and capacitance scale with the number of bits N, rather than by 2 (exp n) as in the flash ADC, speed can be significantly increased, A 4-bit 2-GSps quantizer circuit is under development to evaluate the performance potential. Circuit designs for ADC conversion with a resolution of 6-bits at 25GSps may be enabled by the resonant tunneling approach.

Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode

PubMed Central

2012-01-01

Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer. PACS 73.40.GK, 73.23._b, 73.21.La, 74.62.Dh PMID:22333518

Effect of self-assembled InAs islands on the interfacial roughness of optical-switched resonant tunneling diode.

PubMed

Tian, Haitao; Wang, Lu; Shi, Zhenwu; Gao, Huaiju; Zhang, Shuhui; Wang, Wenxin; Chen, Hong

2012-02-14

Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. However, the interfacial flatness of this device would be worsened due to the introduction of quantum dots. In this paper, we demonstrate that the interfacial quality of this device can be optimized through increasing the growth temperature of AlAs up barrier. The glancing incidence X-ray reflectivity and the high-resolution transmission electron microscopy measurements show that the interfacial smoothness has been greatly improved, and the photo-luminescence test indicated that the InAs QDs were maintained at the same time. The smoother interface was attributed to the evaporation of segregated indium atoms at InGaAs surface layer. PACS: 73.40.GK, 73.23._b, 73.21.La, 74.62.Dh.

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

PubMed

Zhu, Jian; Katine, J A; Rowlands, Graham E; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan G; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L; Krivorotov, Ilya N

2012-05-11

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Homogeneous molybdenum disulfide tunnel diode formed via chemical doping

NASA Astrophysics Data System (ADS)

Liu, Xiaochi; Qu, Deshun; Choi, Min Sup; Lee, Changmin; Kim, Hyoungsub; Yoo, Won Jong

2018-04-01

We report on a simple, controllable chemical doping method to fabricate a lateral homogeneous MoS2 tunnel diode. MoS2 was doped to degenerate n- (1.6 × 1013 cm-2) and p-type (1.1 × 1013 cm-2) by benzyl viologen and AuCl3, respectively. The n- and p-doping can be patterned on the same MoS2 flake, and the high doping concentration can be maintained by Al2O3 masking together with vacuum annealing. A forward rectifying p-n diode and a band-to-band tunneling induced backward rectifying diode were realized by modulating the doping concentration of both the n- and p-sides. Our approach is a universal stratagem to fabricate diverse 2D homogeneous diodes with various functions.

Charge Transport in 2D DNA Tunnel Junction Diodes.

PubMed

Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D; Park, Sung Ha; Im, Seongil

2017-12-01

Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiO x junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiO x ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modeling and characterization of double resonant tunneling diodes for application as energy selective contacts in hot carrier solar cells

NASA Astrophysics Data System (ADS)

Jehl, Zacharie; Suchet, Daniel; Julian, Anatole; Bernard, Cyril; Miyashita, Naoya; Gibelli, Francois; Okada, Yoshitaka; Guillemolles, Jean-Francois

2017-02-01

Double resonant tunneling barriers are considered for an application as energy selective contacts in hot carrier solar cells. Experimental symmetric and asymmetric double resonant tunneling barriers are realized by molecular beam epitaxy and characterized by temperature dependent current-voltage measurements. The negative differential resistance signal is enhanced for asymmetric heterostructures, and remains unchanged between low- and room-temperatures. Within Tsu-Esaki description of the tunnel current, this observation can be explained by the voltage dependence of the tunnel transmission amplitude, which presents a resonance under finite bias for asymmetric structures. This effect is notably discussed with respect to series resistance. Different parameters related to the electronic transmission of the structure and the influence of these parameters on the current voltage characteristic are investigated, bringing insights on critical processes to optimize in double resonant tunneling barriers applied to hot carrier solar cells.

Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alimardani, Nasir; Conley, John F., E-mail: jconley@eecs.oregonstate.edu

Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al{sub 2}O{sub 3}-Ta{sub 2}O{sub 5} bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta{sub 2}O{sub 5} via defect based conduction before tunneling directly through the Al{sub 2}O{sub 3}, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling,more » and operation is relatively insensitive to temperature.« less

Simple tunnel diode circuit for accurate zero crossing timing

NASA Technical Reports Server (NTRS)

Metz, A. J.

1969-01-01

Tunnel diode circuit, capable of timing the zero crossing point of bipolar pulses, provides effective design for a fast crossing detector. It combines a nonlinear load line with the diode to detect the zero crossing of a wide range of input waveshapes.

Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes

PubMed Central

2011-01-01

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness. PMID:22112249

Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.

PubMed

Zhang, Yang; Guan, Min; Liu, Xingfang; Zeng, Yiping

2011-11-23

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

Mn concentration and quantum size effects on spin-polarized transport through CdMnTe based magnetic resonant tunneling diode.

PubMed

Mnasri, S; Abdi-Ben Nasrallahl, S; Sfina, N; Lazzari, J L; Saïd, M

2012-11-01

Theoretical studies on spin-dependent transport in magnetic tunneling diodes with giant Zeeman splitting of the valence band are carried out. The studied structure consists of two nonmagnetic layers CdMgTe separated by a diluted magnetic semiconductor barrier CdMnTe, the hole is surrounded by two p-doped CdTe layers. Based on the parabolic valence band effective mass approximation and the transfer matrix method, the magnetization and the current densities for holes with spin-up and spin-down are studied in terms of the Mn concentration, the well and barrier thicknesses as well as the voltage. It is found that, the current densities depend strongly on these parameters and by choosing suitable values; this structure can be a good spin filter. Such behaviors are originated from the enhancement and suppression in the spin-dependent resonant states.

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications

NASA Astrophysics Data System (ADS)

Alimardani, N.; Conley, J. F.

2013-09-01

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Torque Sensor Based on Tunnel-Diode Oscillator

NASA Technical Reports Server (NTRS)

Chui, Talso; Young, Joseph

2008-01-01

A proposed torque sensor would be capable of operating over the temperature range from 1 to 400 K, whereas a typical commercially available torque sensor is limited to the narrower temperature range of 244 to 338 K. The design of this sensor would exploit the wide temperature range and other desirable attributes of differential transducers based on tunnel-diode oscillators as described in "Multiplexing Transducers Based on Tunnel-Diode Oscillators". The proposed torque sensor would include three flexural springs that would couple torque between a hollow outer drive shaft and a solid inner drive shaft. The torque would be deduced from the torsional relative deflection of the two shafts, which would be sensed via changes in capacitances of two capacitors defined by two electrodes attached to the inner shaft and a common middle electrode attached to the outer shaft.

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

2016-02-10

We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campbell, Philip M., E-mail: philip.campbell@gatech.edu; Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332; Tarasov, Alexey

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs),more » separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.« less

Submicron nickel-oxide-gold tunnel diode detectors for rectennas

NASA Technical Reports Server (NTRS)

Hoofring, A. B.; Kapoor, V. J.; Krawczonek, W.

1989-01-01

The characteristics of a metal-oxide-metal (MOM) tunnel diode made of nickel, nickel-oxide, and gold, designed and fabricated by standard integrated circuit technology for use in FIR rectennas, are presented. The MOM tunnel diode was formed by overlapping a 0.8-micron-wide layer of 1000-A of nickel, which was oxidized to form a thin layer of nickel oxide, with a 1500 A-thick layer of gold. The dc current-voltage characteristics of the MOM diode showed that the current dependence on voltage was linear about zero bias up to a bias of about 70 mV. The maximum detection of a low-level signal (10-mV ac) was determined to be at a dc voltage of 70 mV across the MOM diode. The rectified output signal due to a chopped 10.6-micron CO2 laser incident upon the rectenna device was found to increase with dc bias, with a maximum value of 1000 nV for a junction bias of 100 mV at room temperature.

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

NASA Astrophysics Data System (ADS)

Thomas, Paul M.

Understanding of quantum tunneling phenomenon in semiconductor systems is increasingly important as CMOS replacement technologies are investigated. This work studies a variety of heterojunction materials and types to increase tunnel currents to CMOS competitive levels and to understand how integration onto Si substrates affects performance. Esaki tunnel diodes were grown by Molecular Beam Epitaxy (MBE) on Si substrates via a graded buffer and control Esaki tunnel diodes grown on lattice matched substrates for this work. Peak current density for each diode is extracted and benchmarked to build an empirical data set for predicting diode performance. Additionally, statistics are used as tool to show peak to valley ratio for the III-V on Si sample and the control perform similarly below a threshold area. This work has applications beyond logic, as multijunction solar cell, heterojunction bipolar transistor, and light emitting diode designs all benefit from better tunnel contact design.

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Hybrid tunnel junction contacts to III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

2016-02-01

In this work, we demonstrate highly doped GaN p-n tunnel junction (TJ) contacts on III-nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10-4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a (20\\bar{2}\\bar{1}) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

Resonant Tunneling Spin Pump

NASA Technical Reports Server (NTRS)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

Resonant tunneling in frustrated total internal reflection.

PubMed

Longhi, Stefano

2005-10-15

Anomalous light transmission and resonant tunneling in frustrated total internal reflection (FTIR) are theoretically predicted to occur at periodically curved interfaces. For a low-contrast index and for grazing incidence, it is shown that FTIR resonant tunneling provides an optical realization of field-induced barrier transparency in quantum tunneling.

Monostable circuit with tunnel diode has fast recovery

NASA Technical Reports Server (NTRS)

Heffner, P.

1964-01-01

A monostable multivibrator circuit using a tunnel diode makes it possible for the MSMV to exceed the performance of present multivibrators in two respects. The rise time of the output voltage is faster and the duty cycle is raised to approximately 95 percent.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1992-01-01

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.

Instantons re-examined: dynamical tunneling and resonant tunneling.

PubMed

Le Deunff, Jérémy; Mouchet, Amaury

2010-04-01

Starting from trace formulas for the tunneling splittings (or decay rates) analytically continued in the complex time domain, we obtain explicit semiclassical expansions in terms of complex trajectories that are selected with appropriate complex-time paths. We show how this instantonlike approach, which takes advantage of an incomplete Wick rotation, accurately reproduces tunneling effects not only in the usual double-well potential but also in situations where a pure Wick rotation is insufficient, for instance dynamical tunneling or resonant tunneling. Even though only one-dimensional autonomous Hamiltonian systems are quantitatively studied, we discuss the relevance of our method for multidimensional and/or chaotic tunneling.

Physics and Technology of Resonant-Tunneling Devices

DTIC Science & Technology

1992-07-01

Negative differential resistance, quantum-well inductance, suppressed shot noise, superlattice tunneling, Type-Il heterostructures, lattice...of these deviations is carried out in the accompanying manuscript of Appendix C. 3.1.3. Superlattice Resonant Tunneling In the 1970s, interest in...resonant-tunneling was driven by the desire to observe long-range coherent transport phenomena, such as Bloch oscillations in superlattice structures. In

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

PubMed

Roy, Tania; Tosun, Mahmut; Cao, Xi; Fang, Hui; Lien, Der-Hsien; Zhao, Peida; Chen, Yu-Ze; Chueh, Yu-Lun; Guo, Jing; Javey, Ali

2015-02-24

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.

Optically controlled low-power on-off mode resonant tunneling oscillator with a heterojunction phototransistor switch.

PubMed

Lee, Kiwon; Park, Jaehong; Lee, Jooseok; Yang, Kyounghoon

2015-03-15

We report an optically controlled low-power on-off mode oscillator based on a resonant tunneling diode (RTD) that is monolithically integrated with a heterojunction phototransistor (HPT) optical switch. In order to achieve a low-power operation at a wavelength of 1.55 μm an InP-based quantum-effect tunneling diode is used for microwave signal generation based on a unique negative differential conductance (NDC) characteristic of the RTD at a low applied voltage. In addition, the high-gain HPT is used for converting incident optical data to an electrical data signal. The fabricated on-off mode oscillator shows a low-power consumption of 5 mW and a high-data-rate of 1  Gb/s at an oscillation frequency of 4.7 GHz. A good energy efficiency of 5  pJ/bit has been obtained due to the low DC power consumption along with high-data-rate performance of the RTD-based optoelectronic integration scheme.

Tunnel diode circuit used as nanosecond-range time marker

NASA Technical Reports Server (NTRS)

Larsen, R. N.; Shear, E. B.

1968-01-01

Simple tunnel diode time marker circuit determines the time at which an event occurs in a scintillation crystal. It is capable of triggering at voltages as low as the noise level of a 10-stage PM tube.

Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory.

PubMed

Lee, Hong-Sub; Park, Hyung-Ho

2016-06-22

Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

Surface plasmon dispersion analysis in the metal-oxide-metal tunnel diode

NASA Technical Reports Server (NTRS)

Donohue, J. F.; Wang, E. Y.

1987-01-01

A detailed model of surface plasmon dispersion in the metal-oxide-metal tunnel diode is presented in order to clarify the spectral emission from this diode. The model predicts the location of the spectral peaks and the emission between the peaks by considering the effects of retardation on the surface plasmon. A nonradiative mode is found to play a major role in the transition from the visible to UV peaks in the diode spectra.

Tunnel junction multiple wavelength light-emitting diodes

DOEpatents

Olson, J.M.; Kurtz, S.R.

1992-11-24

A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect. 5 figs.

Nitride-based stacked laser diodes with a tunnel junction

NASA Astrophysics Data System (ADS)

Okawara, Satoru; Aoki, Yuta; Kuwabara, Masakazu; Takagi, Yasufumi; Maeda, Junya; Yoshida, Harumasa

2018-01-01

We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively.

Extracting random numbers from quantum tunnelling through a single diode.

PubMed

Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

2017-12-19

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Resonant tunneling through S- and U-shaped graphene nanoribbons.

PubMed

Zhang, Z Z; Wu, Z H; Chang, Kai; Peeters, F M

2009-10-14

We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks is found emanating from different quasi-bound states in the middle region. The tunneling current can be turned on and off by varying the Fermi energy. Tunability of resonant tunneling is realized by changing the width of the left and/or right leads and without the use of any external gates.

Pump Diode Characterization for an Unstable Diode-Pumped Alkali Laser Resonator

DTIC Science & Technology

2013-03-01

2003. Petersen, A., and R. Lane, Second harmonic operation of diode-pumped Rb vapor lasers , Proc. of SPIE, 7005, 2008. Siegman , A. E., Lasers ...University Science Books, Sausalito, CA, 1986. Siegman , A. E., Defining, measuring and optimizing laser beam quality, Proc. of SPIE, 1868, 1993. Steck, D...PUMP DIODE CHARACTERIZATION FOR AN UNSTABLE DIODE-PUMPED ALKALI LASER RESONATOR THESIS Chad T. Taguba, Master Sergeant, USAF AFIT-ENP-13-M-33

Directional control of infrared antenna-coupled tunnel diodes.

PubMed

Slovick, Brian A; Bean, Jeffrey A; Krenz, Peter M; Boreman, Glenn D

2010-09-27

Directional control of received infrared radiation is demonstrated with a phased-array antenna connected by a coplanar strip transmission line to a metal-oxide-metal (MOM) tunnel diode. We implement a MOM diode to ensure that the measured response originates from the interference of infrared antenna currents at specific locations in the array. The reception angle of the antenna is altered by shifting the diode position along the transmission line connecting the antenna elements. By fabricating the devices on a quarter wave dielectric layer above a ground plane, narrow beam widths of 35° FWHM in power and reception angles of ± 50° are achieved with minimal side lobe contributions. Measured radiation patterns at 10.6 μm are substantiated by electromagnetic simulations as well as an analytic interference model.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures.

PubMed

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J; Li, Lain-Jong; Wallace, Robert M; Datta, Suman; Robinson, Joshua A

2015-06-19

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2-WSe2-graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Multiple-Barrier Resonant Tunneling Structures for Application in a Microwave Generator Stabilized by Microstrip Resonator

DTIC Science & Technology

2000-06-23

conductivity ( NDC ) effects in double barrier resonant tunneling structures (DBRTS) prove the extremely fast frequency response of charge transport (less...UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP013131 TITLE: Multiple-Barrier Resonant Tunneling Structures for...Institute Multiple-barrier resonant tunneling structures for application in a microwave generator stabilized by microstrip resonator S. V. Evstigneev, A. L

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode.

PubMed

Davids, Paul S; Jarecki, Robert L; Starbuck, Andrew; Burckel, D Bruce; Kadlec, Emil A; Ribaudo, Troy; Shaner, Eric A; Peters, David W

2015-12-01

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

PubMed Central

Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; Lu, Ning; Eichfeld, Sarah M.; Zhu, Hui; Li, Ming-Yang; Peng, Xin; Kim, Moon J.; Li, Lain-Jong; Wallace, Robert M.; Datta, Suman; Robinson, Joshua A.

2015-01-01

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS2–WSe2–graphene and WSe2–MoS2–graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics. PMID:26088295

Theoretical analysis of AlGaN/GaN resonant tunnelling diodes with step heterojunctions spacer and sub-quantum well

NASA Astrophysics Data System (ADS)

Liu, Y.; Gao, B.; Gong, M.

2017-06-01

In this paper, we proposed to use step heterojunctions emitter spacer (SHES) and InGaN sub-quantum well in AlGaN/GaN/AlGaN double barrier resonant tunnelling diodes (RTDs). Theoretical analysis of RTD with SHES and InGaN sub-quantum well was presented, which indicated that the negative differential resistance (NDR) characteristic was improved. And the simulation results, peak current density JP=82.67 mA/μm2, the peak-to-valley current ratio PVCR=3.38, and intrinsic negative differential resistance RN=-0.147Ω at room temperature, verified the improvement of NDR characteristic brought about by SHES and InGaN sub-quantum well. Both the theoretical analysis and simulation results showed that the device performance, especially the average oscillator output power presented great improvement and reached 2.77mW/μm2 magnitude. And the resistive cut-off frequency would benefit a lot from the relatively small RN as well. Our works provide an important alternative to the current approaches in designing new structure GaN based RTD for practical high frequency and high power applications.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Resonant tunneling IR detectors

NASA Technical Reports Server (NTRS)

Woodall, Jerry M.; Smith, T. P., III

1990-01-01

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly

Theory of electrically controlled resonant tunneling spin devices

NASA Technical Reports Server (NTRS)

Ting, David Z. -Y.; Cartoixa, Xavier

2004-01-01

We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

NASA Astrophysics Data System (ADS)

Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

2017-06-01

The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

Resonant tunnelling in a quantum oxide superlattice

DOE PAGES

Choi, Woo Seok; Lee, Sang A.; You, Jeong Ho; ...

2015-06-24

Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO 3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switchingmore » typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10 5) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.« less

Quantum tunneling resonant electron transfer process in Lorentzian plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hong, Woo-Pyo; Jung, Young-Dae, E-mail: ydjung@hanyang.ac.kr; Department of Applied Physics and Department of Bionanotechnology, Hanyang University, Ansan, Kyunggi-Do 426-791

The quantum tunneling resonant electron transfer process between a positive ion and a neutral atom collision is investigated in nonthermal generalized Lorentzian plasmas. The result shows that the nonthermal effect enhances the resonant electron transfer cross section in Lorentzian plasmas. It is found that the nonthermal effect on the classical resonant electron transfer cross section is more significant than that on the quantum tunneling resonant charge transfer cross section. It is shown that the nonthermal effect on the resonant electron transfer cross section decreases with an increase of the Debye length. In addition, the nonthermal effect on the quantum tunnelingmore » resonant electron transfer cross section decreases with increasing collision energy. The variation of nonthermal and plasma shielding effects on the quantum tunneling resonant electron transfer process is also discussed.« less

IR detection and energy harvesting using antenna coupled MIM tunnel diodes

NASA Astrophysics Data System (ADS)

Yesilkoy, Filiz

The infrared (IR) spectrum lies between the microwave and optical frequency ranges, which are well suited for communication and energy harvesting purposes, respectively. The long wavelength IR (LWIR) spectrum, corresponding to wavelengths from 8microm to 15microm, includes the thermal radiation emitted by objects at room temperature and the Earth's terrestrial radiation. Therefore, LWIR detectors are very appealing for thermal imaging purposes. Thermal detectors developed so far either demand cryogenic operation for fast detection, or they rely on the accumulation of thermal energy in their mass and subsequent measurable changes in material properties. Therefore, they are relatively slow. Quantum detectors allow for tunable and instantaneous detection but are expensive and require complex processes for fabrication. Bolometer detectors are simple and cheap but do not allow for tunability or for rapid detection. Harvesting the LWIR radiation energy sourced by the Earth's heating/cooling cycle is very important for the development of mobile energy resources. While speed is not as significant an issue here, conversion efficiency is an eminent problem for cheap, large area energy transduction. This dissertation addresses the development of tunable, fast, and low cost wave detectors that can operate at room temperature and, when produced in large array format, can harvest Earth's terrestrial radiation energy. This dissertation demonstrates the design, fabrication and testing of Antenna Coupled Metal-Insulator-Metal (ACMIM) tunnel diodes optimized for 10microm wavelength radiation detection. ACMIM tunnel diodes operate as electromagnetic wave detectors: the incident radiation is coupled by an antenna and converted into a 30 terahertz signal that is rectified by a fast tunneling MIM diode. For efficient IR radiation coupling, the antenna geometry and its critical dimensions are studied using a commercial finite-element based multi-physics simulation tool, and the half

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

NASA Astrophysics Data System (ADS)

Tizno, Ofogh; Ganjipour, Bahram; Heurlin, Magnus; Thelander, Claes; Borgström, Magnus T.; Samuelson, Lars

2017-03-01

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = -0.5 V are extracted at room temperature after normalization with the effective junction area.

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dorda, Antonius, E-mail: dorda@tugraz.at; Schürrer, Ferdinand, E-mail: ferdinand.schuerrer@tugraz.at

2015-03-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of themore » phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.« less

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes

PubMed Central

Dorda, Antonius; Schürrer, Ferdinand

2015-01-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations. PMID:25892748

A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes.

PubMed

Dorda, Antonius; Schürrer, Ferdinand

2015-03-01

We present a novel numerical scheme for the deterministic solution of the Wigner transport equation, especially suited to deal with situations in which strong quantum effects are present. The unique feature of the algorithm is the expansion of the Wigner function in local basis functions, similar to finite element or finite volume methods. This procedure yields a discretization of the pseudo-differential operator that conserves the particle density on arbitrarily chosen grids. The high flexibility in refining the grid spacing together with the weighted essentially non-oscillatory (WENO) scheme for the advection term allows for an accurate and well-resolved simulation of the phase space dynamics. A resonant tunneling diode is considered as test case and a detailed convergence study is given by comparing the results to a non-equilibrium Green's functions calculation. The impact of the considered domain size and of the grid spacing is analyzed. The obtained convergence of the results towards a quasi-exact agreement of the steady state Wigner and Green's functions computations demonstrates the accuracy of the scheme, as well as the high flexibility to adjust to different physical situations.

Graphene-based vertical-junction diodes and applications

NASA Astrophysics Data System (ADS)

Choi, Suk-Ho

2017-09-01

In the last decade, graphene has received extreme attention as an intriguing building block for electronic and photonic device applications. This paper provides an overview of recent progress in the study of vertical-junction diodes based on graphene and its hybrid systems by combination of graphene and other materials. The review is especially focused on tunnelling and Schottky diodes produced by chemical doping of graphene or combination of graphene with various semiconducting/ insulating materials such as hexagonal boron nitrides, Si-quantum-dots-embedded SiO2 multilayers, Si wafers, compound semiconductors, Si nanowires, and porous Si. The uniqueness of graphene enables the application of these convergence structures in high-efficient devices including photodetectors, solar cells, resonant tunnelling diodes, and molecular/DNA sensors.

Enhancement of Spin-transfer torque switching via resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torquemore » thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.« less

Comment on 'Observation of intrinsic bistability in resonant-tunneling structures'

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. G.

1987-01-01

It is suggested that the intrinsic bistability observed by Goldman et al. (1987) occurred not because of charging of the well, as is claimed, but because of oscillations in the negative-resistance region. A typical I-V curve for a double-barrier resonant-tunneling (DBRT) diode which is known to be oscillating is presented. In a reply to this comment, Goldman et al. show that the series resistance (of about 100 ohms) in Sollner's sample leads to extrinsic, rather than intrinsic, bistability. It is furthermore suggested that the mere presence of an oscillation does not in itself exclude intrinsic bistability in a DBRT structure. It is also noted that the intrinsic bistability and buildup of negative charge-space in a DBRT structure well has been demonstrated experimentally by Payling et al. (1987).

Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness

NASA Astrophysics Data System (ADS)

Shi, Xiangyang; Wu, Yuanyuan; Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian; Xiao, Meng; Tan, Wei; Lu, Shulong; Zhang, Jian

2017-12-01

We demonstrate both theoretically and experimentally that the power density of resonant tunneling diode (RTD) can be enhanced by optimizing emitter spacer layer thickness, in addition to reducing barrier thickness. Compared to the widely used epitaxial structure with ultrathin emitter spacer layer thickness, appropriate increasing the thickness will increase the voltage drop in accumulation region, leading to larger voltage widths of negative differential resistance region. By measuring J-V characteristics, the specific contact resistivity, and the self-capacitance, we theoretically analyze the maximum output power of the fabricated RTDs. It shows that the optimized In0.8Ga0.2As/AlAs RTD with 20 nm emitter spacer thickness and 5 μm2 mesa area theoretically possesses the capability to reach 3.1 mW at 300 GHz and 1.8 mW at 600 GHz.

Lithography-Free Fabrication of Core-Shell GaAs Nanowire Tunnel Diodes.

PubMed

Darbandi, A; Kavanagh, K L; Watkins, S P

2015-08-12

GaAs core-shell p-n junction tunnel diodes were demonstrated by combining vapor-liquid-solid growth with gallium oxide deposition by atomic layer deposition for electrical isolation. The characterization of an ensemble of core-shell structures was enabled by the use of a tungsten probe in a scanning electron microscope without the need for lithographic processing. Radial tunneling transport was observed, exhibiting negative differential resistance behavior with peak-to-valley current ratios of up to 3.1. Peak current densities of up to 2.1 kA/cm(2) point the way to applications in core-shell photovoltaics and tunnel field effect transistors.

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Super-resolution imaging by resonant tunneling in anisotropic acoustic metamaterials.

PubMed

Liu, Aiping; Zhou, Xiaoming; Huang, Guoliang; Hu, Gengkai

2012-10-01

The resonant tunneling effects that could result in complete transmission of evanescent waves are examined in acoustic metamaterials of anisotropic effective mass. The tunneling conditions are first derived for the metamaterials composed of classical mass-in-mass structures. It is found that the tunneling transmission occurs when the total length of metamaterials is an integral number of half-wavelengths of the periodic Bloch wave. Due to the local resonance of building units of metamaterials, the Bloch waves are spatially modulated within the periodic structures, leading to the resonant tunneling occurring in the low-frequency region. The metamaterial slab lens with anisotropic effective mass is designed by which the physics of resonant tunneling and the features for evanescent field manipulations are examined. The designed lens interacts with evanescent waves in the way of the propagating wavenumber weakly dependent on the spatial frequency of evanescent waves. Full-wave simulations validate the imaging performance of the proposed lens with the spatial resolution beyond the diffraction limit.

Tunnel injection transit-time diodes for W-band power generation

NASA Technical Reports Server (NTRS)

Kidner, C.; Eisele, H.; Haddad, G. I.

1992-01-01

GaAs p(+ +)n(+)n(-)n(+) single-drift tunnel injection transit-time (TUNNETT) diodes for W-band operation have been successfully designed and tested. An output power of 32 mW at 93.5 GHz with a dc to RF conversion efficiency of 2.6 percent was obtained. The oscillations have a clean spectrum in a conventional waveguide cavity.

Monolithic stacked blue light-emitting diodes with polarization-enhanced tunnel junctions.

PubMed

Kuo, Yen-Kuang; Shih, Ya-Hsuan; Chang, Jih-Yuan; Lai, Wei-Chih; Liu, Heng; Chen, Fang-Ming; Lee, Ming-Lun; Sheu, Jinn-Kong

2017-08-07

Monolithic stacked InGaN light-emitting diode (LED) connected by a polarization-enhanced GaN/AlN-based tunnel junction is demonstrated experimentally in this study. The typical stacked LEDs exhibit 80% enhancement in output power compared with conventional single LEDs because of the repeated use of electrons and holes for photon generation. The typical operation voltage of stacked LEDs is higher than twice the operation voltage of single LEDs. This high operation voltage can be attributed to the non-optimal tunneling junction in stacked LEDs. In addition to the analyses of experimental results, theoretical analysis of different schemes of tunnel junctions, including diagrams of energy bands, diagrams of electric fields, and current-voltage relation curves, are investigated using numerical simulation. The results shown in this paper demonstrate the feasibility in developing cost-effective and highly efficient tunnel-junction LEDs.

Thermal sensing of cryogenic wind tunnel model surfaces Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, K.; Ash, R. L.; Dillon-Townes, L. A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Thermal sensing of cryogenic wind tunnel model surfaces - Evaluation of silicon diodes

NASA Technical Reports Server (NTRS)

Daryabeigi, Kamran; Ash, Robert L.; Dillon-Townes, Lawrence A.

1986-01-01

Different sensors and installation techniques for surface temperature measurement of cryogenic wind tunnel models were investigated. Silicon diodes were selected for further consideration because of their good inherent accuracy. Their average absolute temperature deviation in comparison tests with standard platinum resistance thermometers was found to be 0.2 K in the range from 125 to 273 K. Subsurface temperature measurement was selected as the installation technique in order to minimize aerodynamic interference. Temperature distortion caused by an embedded silicon diode was studied numerically.

Resonant tunneling in graphene pseudomagnetic quantum dots.

PubMed

Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro

2013-06-12

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

Spin-torque diode frequency tuning via soft exchange pinning of both magnetic layers

NASA Astrophysics Data System (ADS)

Khudorozhkov, A. A.; Skirdkov, P. N.; Zvezdin, K. A.; Vetoshko, P. M.; Popkov, A. F.

2017-12-01

A spin-torque diode, which is a magnetic tunnel junction with magnetic layers softly pinned at some tilt to each other, is proposed. The resonance operating frequency of such a dual exchange-pinned spin-torque diode can be significantly higher (up to 9.5 GHz) than that of a traditional free layer spin-torque diode, and, at the same time, the sensitivity remains rather high. Using micromagnetic modeling we show that the maximum microwave sensitivity of the considered diode is reached at the bias current densities slightly below the self-sustained oscillations initiating. The dependence of the resonance frequency and the sensitivity on the angle between pinning exchange fields is presented. Thus, a way of designing spin-torque diode with a given resonance response frequency in the microwave region in the absence of an external magnetic field is proposed.

Resonant tunnelling and negative differential conductance in graphene transistors

PubMed Central

Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

2013-01-01

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. PMID:23653206

Phonon-tunnelling dissipation in mechanical resonators

PubMed Central

Cole, Garrett D.; Wilson-Rae, Ignacio; Werbach, Katharina; Vanner, Michael R.; Aspelmeyer, Markus

2011-01-01

Microscale and nanoscale mechanical resonators have recently emerged as ubiquitous devices for use in advanced technological applications, for example, in mobile communications and inertial sensors, and as novel tools for fundamental scientific endeavours. Their performance is in many cases limited by the deleterious effects of mechanical damping. In this study, we report a significant advancement towards understanding and controlling support-induced losses in generic mechanical resonators. We begin by introducing an efficient numerical solver, based on the 'phonon-tunnelling' approach, capable of predicting the design-limited damping of high-quality mechanical resonators. Further, through careful device engineering, we isolate support-induced losses and perform a rigorous experimental test of the strong geometric dependence of this loss mechanism. Our results are in excellent agreement with the theory, demonstrating the predictive power of our approach. In combination with recent progress on complementary dissipation mechanisms, our phonon-tunnelling solver represents a major step towards accurate prediction of the mechanical quality factor. PMID:21407197

Resonant tunneling effects on cavity-embedded metal film caused by surface-plasmon excitation.

PubMed

Lan, Yung-Chiang; Chang, Che-Jung; Lee, Peng-Hsiao

2009-01-01

We investigate cavity-modulated resonant tunneling through a silver film with periodic grooves on both surfaces. A strip cavity embedded in the film affects tunneling frequencies via a coupling mode and waveguide mode. In the coupling mode, both the resonant tunneling through the gap between the groove and the cavity and the cavity itself form an entire resonant structure. In the waveguide mode, however, the cavity functions as a surface-plasmon waveguide. Hence, tunneling frequencies are close to resonant absorption frequencies of the groove structure and are irrelevant to cavity properties.

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

PubMed

Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; Movva, Hema C P; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F; Banerjee, Sanjay K; Tutuc, Emanuel

2015-01-14

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

Superconductivity-induced macroscopic resonant tunneling.

PubMed

Goorden, M C; Jacquod, Ph; Weiss, J

2008-02-15

We show analytically and by numerical simulations that the conductance through pi-biased chaotic Josephson junctions is enhanced by several orders of magnitude in the short-wavelength regime. We identify the mechanism behind this effect as macroscopic resonant tunneling through a macroscopic number of low-energy quasidegenerate Andreev levels.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

Semiclassical description of resonance-assisted tunneling in one-dimensional integrable models

NASA Astrophysics Data System (ADS)

Le Deunff, Jérémy; Mouchet, Amaury; Schlagheck, Peter

2013-10-01

Resonance-assisted tunneling is investigated within the framework of one-dimensional integrable systems. We present a systematic recipe, based on Hamiltonian normal forms, to construct one-dimensional integrable models that exhibit resonance island chain structures with accurately controlled sizes and positions of the islands. Using complex classical trajectories that evolve along suitably defined paths in the complex time domain, we construct a semiclassical theory of the resonance-assisted tunneling process. This semiclassical approach yields a compact analytical expression for tunnelling-induced level splittings which is found to be in very good agreement with the exact splittings obtained through numerical diagonalization.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Resonant Versus Anti-Resonant Tunneling at Carbon Nanotube A-B-A Heterostructures

NASA Technical Reports Server (NTRS)

Mingo, N.; Yang, Liu; Han, Jie; Anantram, M. P.

2001-01-01

Narrow antiresonances going to zero transmission are found to occur for general (2n,0)(n,n)(2n,0) carbon nanotube heterostructures, whereas the complementary configuration, (n,n)(2n,0)(n,n), displays simple resonant tunneling behaviour. We compute examples for different cases, and give a simple explanation for the appearance of antiresonances in one case but not in the other. Conditions and ranges for the occurrence of these different behaviors are stated. The phenomenon of anti-resonant tunneling, which has passed unnoticed in previous studies of nanotube heterostructures, adds up to the rich set of behaviors available to nanotube based quantum effect devices.

Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip

NASA Astrophysics Data System (ADS)

Cardoso, F. A.; Ferreira, H. A.; Conde, J. P.; Chu, V.; Freitas, P. P.; Vidal, D.; Germano, J.; Sousa, L.; Piedade, M. S.; Costa, B. A.; Lemos, J. M.

2006-04-01

Magnetoresistive biochips have been recently introduced for the detection of biomolecular recognition. In this work, the detection site incorporates a thin-film diode in series with a magnetic tunnel junction (MTJ), leading to a matrix-based biochip that can be easily scaled up to screen large numbers of different target analytes. The fabricated 16×16 cell matrix integrates hydrogenated amorphous silicon (a-Si:H) diodes with aluminum oxide barrier MTJ. Each detection site also includes a U-shaped current line for magnetically assisted target concentration at probe sites. The biochip is being integrated in a portable, credit card size electronics control platform. Detection of 250 nm diameter magnetic nanoparticles by one of the matrix cells is demonstrated.

Arrangement for damping the resonance in a laser diode

NASA Technical Reports Server (NTRS)

Katz, J.; Yariv, A.; Margalit, S. (Inventor)

1985-01-01

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

Probing semiconductor gap states with resonant tunneling.

PubMed

Loth, S; Wenderoth, M; Winking, L; Ulbrich, R G; Malzer, S; Döhler, G H

2006-02-17

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.

Self-consistent vertical transport calculations in AlxGa1-xN/GaN based resonant tunneling diode

NASA Astrophysics Data System (ADS)

Rached, A.; Bhouri, A.; Sakr, S.; Lazzari, J.-L.; Belmabrouk, H.

2016-03-01

The formation of two-dimensional electron gases (2DEGs) at AlxGa1-xN/GaN hexagonal double-barriers (DB) resonant tunneling diodes (RTD) is investigated by numerical self-consistent (SC) solutions of the coupled Schrödinger and Poisson equations. Spontaneous and piezoelectric effects across the material interfaces are rigorously taken into account. Conduction band profiles, band edges and corresponding envelope functions are calculated in the AlxGa1-xN/GaN structures and likened to those where no polarization effects are included. The combined effect of the polarization-induced bound charge and conduction band offsets between the hexagonal AlGaN and GaN results in the formation of 2DEGs on one side of the DB and a depletion region on the other side. Using the transfer matrix formalism, the vertical transport (J-V characteristics) in AlGaN/GaN RTDs is calculated with a fully SC calculation in the ballistic regime. Compared to standard calculations where the voltage drop along the structure is supposed to be linear, the SC method leads to strong quantitative changes in the J-V characteristics showing that the applied electric field varies significantly in the active region of the structure. The influences of the aluminum composition and the GaN(AlGaN) thickness layers on the evolution of the current characteristics are also self-consistently investigated and discussed. We show that the electrical characteristics are very sensitive to the potential barrier due to the interplay between the potential symmetry and the barrier height and width. More interestingly, we demonstrate that the figures of merit namely the peak-to-valley ratio (PVR) of GaN/AlGaN RTDs can be optimized by increasing the quantum well width.

Size dependent tunnel diode effects in gold tipped CdSe nanodumbbells.

PubMed

Saraf, Deepashri; Kumar, Ashok; Kanhere, Dilip; Kshirsagar, Anjali

2017-02-07

We report simulation results for scanning tunneling spectroscopy of gold-tipped CdSe nanodumbbells of lengths ∼27 Å and ∼78 Å. Present results are based on Bardeen, Tersoff, and Hamann formalism that takes inputs from ab initio calculations. For the shorter nanodumbbell, the current-voltage curves reveal negative differential conductance, the characteristic of a tunnel diode. This behaviour is attributed to highly localized metal induced gap states that rapidly decay towards the center of the nanodumbbell leading to suppression in tunneling. In the longer nanodumbbell, these gap states are absent in the central region, as a consequence of which zero tunneling current is observed in that region. The overall current-voltage characteristics for this nanodumbbell are observed to be largely linear near the metal-semiconductor interface and become rectifying at the central region, the nature being similar to its parent nanorod. The cross-sectional heights of these nanodumbbells also show bias-dependence where we begin to observe giant Stark effect features in the semiconducting central region of the longer nanodumbbell.

Resonant tunneling across a ferroelectric domain wall

NASA Astrophysics Data System (ADS)

Li, M.; Tao, L. L.; Velev, J. P.; Tsymbal, E. Y.

2018-04-01

Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with L a0.5S r0.5Mn O3 electrodes separated by a BaTi O3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTi O3 can be induced by polar interfaces. The resulting V -shaped electrostatic potential profile across the BaTi O3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum- and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

Electromagnetic Tunneling and Resonances in Pseudochiral Omega Slabs

PubMed Central

Razzaz, Faroq; Alkanhal, Majeed A. S.

2017-01-01

This paper presents theoretical investigation of the electromagnetic wave tunneling and anomalous transmission around the trapped modes in a pseudochiral omega slab. The dispersion relation, the conditions of the trapped modes, and the evanescent wave coupling and tunneling in two different reciprocal pseudochiral omega slab structures are derived. The Berreman’s matrix method is applied to obtain the transmission coefficients across the pseudochiral omega slab. When the structure is perturbed, a resonance phenomenon is detected around the trapped modes. This resonance results in transmission anomalies (total transmission and total reflection) and dramatic field amplifications around the trapped modes. The number of the discrete trapped modes and then the resonance frequencies are prescribed by the parameters of the pseudochiral omega slab such as the value of the omega parameter and its orientation and the slab thickness. PMID:28165058

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Macroscopic resonant tunneling in the presence of low frequency noise.

PubMed

Amin, M H S; Averin, Dmitri V

2008-05-16

We develop a theory of macroscopic resonant tunneling of flux in a double-well potential in the presence of realistic flux noise with a significant low-frequency component. The rate of incoherent flux tunneling between the wells exhibits resonant peaks, the shape and position of which reflect qualitative features of the noise, and can thus serve as a diagnostic tool for studying the low-frequency flux noise in SQUID qubits. We show, in particular, that the noise-induced renormalization of the first resonant peak provides direct information on the temperature of the noise source and the strength of its quantum component.

Resonant spin tunneling in randomly oriented nanospheres of Mn 12 acetate

DOE PAGES

Lendínez, S.; Zarzuela, R.; Tejada, J.; ...

2015-01-06

We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn₁₂ acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn₁₂ acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for amore » single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn₁₂ acetate. In conclusion, our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.« less

Resonant spin tunneling in randomly oriented nanospheres of Mn 12 acetate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lendínez, S.; Zarzuela, R.; Tejada, J.

We report measurements and theoretical analysis of resonant spin tunneling in randomly oriented nanospheres of a molecular magnet. Amorphous nanospheres of Mn₁₂ acetate have been fabricated and characterized by chemical, infrared, TEM, X-ray, and magnetic methods. Magnetic measurements have revealed sharp tunneling peaks in the field derivative of the magnetization that occur at the typical resonant field values for the Mn₁₂ acetate crystal in the field parallel to the easy axis.Theoretical analysis is provided that explains these observations. We argue that resonant spin tunneling in a molecular magnet can be established in a powder sample, without the need for amore » single crystal and without aligning the easy magnetization axes of the molecules. This is confirmed by re-analyzing the old data on a powdered sample of non-oriented micron-size crystals of Mn₁₂ acetate. In conclusion, our findings can greatly simplify the selection of candidates for quantum spin tunneling among newly synthesized molecular magnets.« less

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

NASA Technical Reports Server (NTRS)

Kulkarni, Shriram; Mazumder, Pinaki; Haddad, George I.

1995-01-01

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Optical design of tunnel lighting with white light-emitting diodes.

PubMed

Tsai, Ming-Shiou; Lee, Xuan-Hao; Lo, Yi-Chien; Sun, Ching-Cherng

2014-10-10

This paper presents a tunnel lighting design consisting of a cluster light-emitting diode and a free-form lens. Most of the energy emitted from the proposed luminaire is transmitted onto the surface of the road in front of drivers, and the probability that that energy is emitted directly into drivers' eyes is low. Compared with traditional fluorescent lamps, the proposed luminaire, of which the optical utilization factor, optical efficiency, and uniformity are, respectively, 44%, 92.5%, and 0.72, exhibits favorable performance in energy saving, glare reduction, and traffic safety.

Scanning Tunneling Optical Resonance Microscopy

NASA Technical Reports Server (NTRS)

Bailey, Sheila; Wilt, Dave; Raffaelle, Ryne; Gennett, Tom; Tin, Padetha; Lau, Janice; Castro, Stephanie; Jenkins, Philip; Scheiman, Dave

2003-01-01

Scanning tunneling optical resonance microscopy (STORM) is a method, now undergoing development, for measuring optoelectronic properties of materials and devices on the nanoscale by means of a combination of (1) traditional scanning tunneling microscopy (STM) with (2) tunable laser spectroscopy. In STORM, an STM tip probing a semiconductor is illuminated with modulated light at a wavelength in the visible-to-near-infrared range and the resulting photoenhancement of the tunneling current is measured as a function of the illuminating wavelength. The photoenhancement of tunneling current occurs when the laser photon energy is sufficient to excite charge carriers into the conduction band of the semiconductor. Figure 1 schematically depicts a proposed STORM apparatus. The light for illuminating the semiconductor specimen at the STM would be generated by a ring laser that would be tunable across the wavelength range of interest. The laser beam would be chopped by an achromatic liquid-crystal modulator. A polarization-maintaining optical fiber would couple the light to the tip/sample junction of a commercial STM. An STM can be operated in one of two modes: constant height or constant current. A STORM apparatus would be operated in the constant-current mode, in which the height of the tip relative to the specimen would be varied in order to keep the tunneling current constant. In this mode, a feedback control circuit adjusts the voltage applied to a piezoelectric actuator in the STM that adjusts the height of the STM tip to keep the tunneling current constant. The exponential relationship between the tunneling current and tip-to-sample distance makes it relatively easy to implement this mode of operation. The choice of method by which the photoenhanced portion of the tunneling current would be measured depends on choice of the frequency at which the input illumination would be modulated (chopped). If the frequency of modulation were low enough (typically < 10 Hz) that the

Rectifying magnetic tunnel diode like behavior in Co2MnSi/ZnO/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Nath, T. K.

2018-04-01

The rectifying magnetic tunnel diode like behavior has been observed in Co2MnSi/ZnO/p-Si heterostructure. At first an ultra thin layer of ZnO has been deposited on p-Si (100) substrate with the help of pulsed laser deposition (PLD). After that a highly spin-polarized Heusler alloy Co2MnSi (CMS) film (250 nm) has been grown on ZnO/p-Si using electron beam physical vapor deposition technique. The phase purity of the sample has been confirmed through high resolution X-Ray diffraction technique. The electrical transport properties have been investigated at various isothermal conditions in the temperature range of 77-300 K. The current-voltage characteristics exhibit an excellent rectifying tunnel diode like behavior throughout the temperature regime. The current (I) across the junction has been found to decrease with the application of an external magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. The magnetic field dependent JMR behavior of our heterostructure has been investigated in the same temperature range. Our heterostructure clearly demonstrates a giant positive JMR at 78 K (˜264%) and it starts decreasing with increasing temperature. If we compare our results with earlier reported results on other heterostructures, it can be seen that the JMR value for our heterojunction saturates at a much lower external magnetic field, thus creating it a better alternative for spin tunnel diodes in upcoming spintronics device applications.

Diode-laser frequency stabilization based on the resonant Faraday effect

NASA Technical Reports Server (NTRS)

Wanninger, P.; Valdez, E. C.; Shay, T. M.

1992-01-01

The authors present the results of a method for frequency stabilizing laser diodes based on the resonant Faraday effects. A Faraday cell in conjunction with a polarizer crossed with respect to the polarization of the laser diode comprises the intracavity frequency selective element. In this arrangement, a laser pull-in range of 9 A was measured, and the laser operated at a single frequency with a linewidth less than 6 MHz.

Resonant Zener tunneling in two-dimensional periodic photonic lattices.

PubMed

Desyatnikov, Anton S; Kivshar, Yuri S; Shchesnovich, Valery S; Cavalcanti, Solange B; Hickmann, Jandir M

2007-02-15

We study Zener tunneling in two-dimensional photonic lattices and derive, for the case of hexagonal symmetry, the generalized Landau-Zener-Majorana model describing resonant interaction between high-symmetry points of the photonic spectral bands. We demonstrate that this effect can be employed for the generation of Floquet-Bloch modes and verify the model by direct numerical simulations of the tunneling effect.

Scanning Tunneling Optical Resonance Microscopy Developed

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.; Lau, Janis E.; Jenkins, Phillip P.; Castro, Stephanie L.; Tin, Padetha; Wilt, David M.; Pal, Anna Maria; Fahey, Stephen D.

2004-01-01

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models

NASA Astrophysics Data System (ADS)

Smets, Quentin; Verreck, Devin; Verhulst, Anne S.; Rooyackers, Rita; Merckling, Clément; Van De Put, Maarten; Simoen, Eddy; Vandervorst, Wilfried; Collaert, Nadine; Thean, Voon Y.; Sorée, Bart; Groeseneken, Guido; Heyns, Marc M.

2014-05-01

Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET.

Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

NASA Astrophysics Data System (ADS)

Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

2017-10-01

We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

NASA Astrophysics Data System (ADS)

Payne, A.; Ambal, K.; Boehme, C.; Williams, C. C.

2015-05-01

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy system noise. The results show that the approach could provide single-spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions.

PubMed

Parzefall, M; Bharadwaj, P; Jain, A; Taniguchi, T; Watanabe, K; Novotny, L

2015-12-01

The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

Resonantly diode-pumped Er:YAG laser: 1470-nm versus 1530-nm CW pumping case

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Ter-Gabrielyan, Nikolai; Dubinskii, Mark

2009-05-01

Growing interest to high power lasers in the eye-safe spectral domain initiated a new wave of activity in developing solid-state lasers based on bulk Er3+-doped materials. The resonant pumping of SSL allows for shifting significant part of thermal load from gain medium itself to the pump diodes, thus greatly reducing gain medium thermal distortions deleterious to SSL power scaling with high beam quality. The two major resonant pumping bands in Er:YAG are centered around 1470 and 1532 nm. Pumping into each of these bands has its pros and contras. The best approach to resonant pumping of Er:YAG active media in terms of pump wavelength is yet to be determined. We report the investigation results of high power diode-pumped Er:YAG laser aimed at direct comparison of resonant pumping at 1470 and 1532 nm. Two sources used for pumping were: 1530-nm 10-diode bar stack (>300 W CW) and 1470-nm 10-diode bar stack (>650 W CW). Both pumps were spectrally narrowed by external volume Bragg gratings. The obtained spectral width of less than 1 nm allowed for 'in-line' pumping of Er3+ in either band. The obtained CW power of over 87 W is, to the best of our knowledge, the record high power reported for resonantly pumped Er:YAG DPSSL at room temperature.

High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

PubMed

Ganjipour, Bahram; Dey, Anil W; Borg, B Mattias; Ek, Martin; Pistol, Mats-Erik; Dick, Kimberly A; Wernersson, Lars-Erik; Thelander, Claes

2011-10-12

We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

PubMed

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate <10(-10) is -25.6 dBm, and the power penalty added after 25-km transmission is less than 2 dB for all 16 channels.

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

NASA Astrophysics Data System (ADS)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode.

PubMed

Jia, Chuancheng; Ma, Wei; Gu, Chunhui; Chen, Hongliang; Yu, Haomiao; Li, Xinxi; Zhang, Fan; Gu, Lin; Xia, Andong; Hou, Xiaoyuan; Meng, Sheng; Guo, Xuefeng

2016-06-08

A heterostructure photovoltaic diode featuring an all-solid-state TiO2/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron-hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO2 transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO2/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.

Strongly interacting photons in asymmetric quantum well via resonant tunneling.

PubMed

Sun, H; Fan, S L; Feng, X L; Wu, C F; Gong, S Q; Huang, G X; Oh, C H

2012-04-09

We propose an asymmetric quantum well structure to realize strong interaction between two slow optical pulses. The essential idea is the combination of the advantages of inverted-Y type scheme and resonant tunneling. We analytically demonstrate that giant cross-Kerr nonlinearity can be achieved with vanishing absorptions. Owing to resonant tunneling, the contributions of the probe and signal cross-Kerr nonlinearities to total nonlinear phase shift vary from destructive to constrictive, leading to nonlinear phase shift on order of π at low light level. In this structure, the scheme is inherent symmetric for the probe and signal pulses. Consequently, the condition of group velocity matching can be fulfilled with appropriate initial electron distribution.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

PubMed Central

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-01-01

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

PubMed

Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

2017-04-19

Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

Ultrasmall multi-channel resonant-tunneling filter using mode gap of width-tuned photonic-crystal waveguide.

PubMed

Shinya, Akihiko; Mitsugi, Satoshi; Kuramochi, Eiichi; Notomi, Masaya

2005-05-30

We have devised an ultra-small multi-channel drop filter based on a two-port resonant tunneling system in a two-dimensional photonic crystal with a triangular air-hole lattice. This filter does not require careful consideration of the interference process to achieve a high dropping efficiency. First we develop three-port systems based on a two-port resonant tunneling filter. Next we devise a multi-port channel drop filter by cascading these three-port systems. In this paper, we demonstrate a ten-channel drop filter with an 18 mum device size by 2D-FDTD calculation, and a three-port resonant tunneling filter with 65+/- 20 % dropping efficiency by experiment.

Chaos-Assisted Quantum Tunneling and Delocalization Caused by Resonance or Near-Resonance

NASA Astrophysics Data System (ADS)

Liang, Danfu; Zhang, Jiawei; Zhang, Xili

2018-05-01

We investigate the quantum transport of a single particle trapped in a tilted optical lattice modulated with periodical delta kicks, and attempt to figure out the relationship between chaos and delocalization or quantum tunneling. We illustrate some resonant parameter lines existing in both chaotic and regular parameter regions, and discover the velocity of delocalization of particle tends to faster in the resonant line as well as the lines in which the lattice tilt is an integral multiple n of tilt driving frequency in chaotic region. While the degree of localization is linked to the distance between parameter points and resonant lines. Those useful results can be experimentally applied to control chaos-assisted transport of single particle held in optical lattices.

Resonantly diode-pumped continuous-wave and Q-switched Er:YAG laser at 1645 nm.

PubMed

Chang, N W H; Simakov, N; Hosken, D J; Munch, J; Ottaway, D J; Veitch, P J

2010-06-21

We describe an efficient Er:YAG laser that is resonantly pumped using continuous-wave (CW) laser diodes at 1470 nm. For CW lasing, it emits 6.1 W at 1645 nm with a slope efficiency of 36%, the highest efficiency reported for an Er:YAG laser that is pumped in this manner. In Q-switched operation, the laser produces diffraction-limited pulses with an average power of 2.5 W at 2 kHz PRF. To our knowledge this is the first Q-switched Er:YAG laser resonantly pumped by CW laser diodes.

Resonant and nondissipative tunneling in independently contacted graphene structures

NASA Astrophysics Data System (ADS)

Vasko, F. T.

2013-02-01

The tunneling processes between independently contacted graphene sheets separated by thin insulator are restricted by the momentum and energy conservation laws. Because of this, both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and nondissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, must be taken into account. The tunneling current density is calculated for the graphene-boron nitride-graphene layers, which is described by the tight-binding approach, and for the predominant momentum scattering by static disorder. Dependencies of current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. The current-voltage characteristics of the back-gated structure are in agreement with the recent experiment [ScienceSCIEAS0036-807510.1126/science.1218461 335, 947 (2012)]. For the double-gated structures, the resonant dissipative tunneling causes a 10-fold enhancement of response which is important for transistor applications.

Single-molecular diodes based on opioid derivatives.

PubMed

Siqueira, M R S; Corrêa, S M; Gester, R M; Del Nero, J; Neto, A M J C

2015-12-01

We propose an efficient single-molecule rectifier based on a derivative of opioid. Electron transport properties are investigated within the non-equilibrium Green's function formalism combined with density functional theory. The analysis of the current-voltage characteristics indicates obvious diode-like behavior. While heroin presents rectification coefficient R>1, indicating preferential electronic current from electron-donating to electron-withdrawing, 3 and 6-acetylmorphine and morphine exhibit contrary behavior, R<1. Our calculations indicate that the simple inclusion of acetyl groups modulate a range of devices, which varies from simple rectifying to resonant-tunneling diodes. In particular, the rectification rations for heroin diodes show microampere electron current with a maximum of rectification (R=9.1) at very low bias voltage of ∼0.6 V and (R=14.3)∼1.8 V with resistance varying between 0.4 and 1.5 M Ω. Once most of the current single-molecule diodes usually rectifies in nanoampere, are not stable over 1.0 V and present electrical resistance around 10 M. Molecular devices based on opioid derivatives are promising in molecular electronics.

Resonant and Inelastic Andreev Tunneling Observed on a Carbon Nanotube Quantum Dot.

PubMed

Gramich, J; Baumgartner, A; Schönenberger, C

2015-11-20

We report the observation of two fundamental subgap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact. First, we find a single resonance with position, shape, and amplitude consistent with the theoretically predicted resonant Andreev tunneling (AT) through a single QD level. Second, we observe a series of discrete replicas of resonant AT at a separation of ~145 μeV, with a gate, bias, and temperature dependence characteristic for boson-assisted, inelastic AT, in which energy is exchanged between a bosonic bath and the electrons. The magnetic field dependence of the replica's amplitudes and energies suggest that two different bosons couple to the tunnel process.

Multiplexing Transducers Based on Tunnel-Diode Oscillators

NASA Technical Reports Server (NTRS)

Chui, Talso; Penanen, Konstantin; Young, Joseph

2006-01-01

Multiplexing and differential transducers based on tunnel-diode oscillators (TDOs) would be developed, according to a proposal, for operation at very low and/or widely varying temperatures in applications that involve requirements to minimize the power and mass of transducer electronic circuitry. It has been known since 1975 that TDOs are useful for making high-resolution (of the order of 10(exp -9)) measurements at low temperatures. Since that time, TDO transducers have been found to offer the following additional advantages, which the present proposal is intended to exploit: TDO transducers can operate at temperatures ranging from 1 K to about 400 K. Most electronic components other than tunnel diodes do not operate over such a wide temperature range. TDO transducers can be made to operate at very low power - typically, <1 mW. Inasmuch as the response of a TDO transducer is a small change in an arbitrarily set oscillation frequency, the outputs of many TDOs operating at sufficiently different set frequencies can be multiplexed through a single wire. Inasmuch as frequencies can be easily subtracted by means of mixing circuitry, one can easily use two TDOs to make differential measurements. Differential measurements are generally more precise and less susceptible to environmental variations than are absolute measurements. TDO transducers are tolerant to ionizing radiation. Ultimately, the response of a TDO transducer is measured by use of a frequency counter. Because frequency counting can be easily implemented by use of clock signals available from most microprocessors, it is not necessary to incorporate additional readout circuitry that would, if included, add to the mass and power consumption of the transducer circuitry. In one example of many potential variations on the basic theme of the proposal, the figure schematically depicts a conceptual differential-pressure transducer containing a symmetrical pair of TDOs. The differential pressure would be exerted on

Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.

PubMed

Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki

2010-04-23

The valence-band structure and the Fermi level (E(F)) position of ferromagnetic-semiconductor GaMnAs are quantitatively investigated by electrically detecting the resonant tunneling levels of a GaMnAs quantum well (QW) in double-barrier heterostructures. The resonant level from the heavy-hole first state is clearly observed in the metallic GaMnAs QW, indicating that holes have a high coherency and that E(F) exists in the band gap. Clear enhancement of tunnel magnetoresistance induced by resonant tunneling is demonstrated in these double-barrier heterostructures.

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

NASA Astrophysics Data System (ADS)

El Kazzi, S.; Alian, A.; Hsu, B.; Verhulst, A. S.; Walke, A.; Favia, P.; Douhard, B.; Lu, W.; del Alamo, J. A.; Collaert, N.; Merckling, C.

2018-02-01

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an "InSb-like" interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the "GaAs-like" one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.

PubMed

Vdovin, E E; Mishchenko, A; Greenaway, M T; Zhu, M J; Ghazaryan, D; Misra, A; Cao, Y; Morozov, S V; Makarovsky, O; Fromhold, T M; Patanè, A; Slotman, G J; Katsnelson, M I; Geim, A K; Novoselov, K S; Eaves, L

2016-05-06

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Solid State Research

DTIC Science & Technology

1987-01-07

Excimer-Laser Projection Lithography 38 4.5 Observation of Millimeter-Wave Oscillations from Resonant- Tunneling Diodes and Some Theroretical...and SIMOX Circuits 32 4-1 Resonant Tunneling Diode Parameters 41 XI INTRODUCTION 1. SOLID STATE DEVICE RESEARCH Optoelectronic switches have...radiation and reflective optics. Oscillation frequencies as high as 56 GHz have been observed from resonant- tunneling double- barrier diodes. Recent

Resonantly diode laser pumped 1.6-μm Er:YAG laser

NASA Astrophysics Data System (ADS)

Garbuzov, Dmitri; Kudryashov, Igor; Dubinskii, Mark

2005-06-01

We report what is believed to be the first demonstration of direct resonant diode pumping of a 1.6-mm Er3+-doped bulk solid-state laser (DPSSL). The most of the results is obtained with pumping Er:YAG by the single mode diode laser packaged in fibered modules. The fibered modules, emitting at 1470 nm and 1530 nm wavelength with and without fiber grating (FBG) stabilization, have been used in pumping experiments. The very first results on high power DPSSL operation achieved with diode array pumping also will be presented. The highest absorbed photon conversion efficiency of 26% has been obtained for Er:YAG DPSSL using the 1470-nm single-mode module. Analysis of the DPSSL input-output characteristics suggests that the obtained slope efficiency can be increased at least up to 40% through the reduction of intracavity losses and pumping efficiency improvement. Diode pumped SSL (DPSSL) operates at a wavelength of 1617 nm and 1645 nm.

Hybrid Tunnel Junction-Graphene Transparent Conductive Electrodes for Nitride Lateral Light Emitting Diodes.

PubMed

Wang, Liancheng; Cheng, Yan; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong

2016-01-20

Graphene transparent conductive electrode (TCE) applications in nitride light emitting diodes (LEDs) are still limited by the large contact resistance and interface barrier between graphene and p-GaN. We propose a hybrid tunnel junction (TJ)-graphene TCE approach for nitride lateral LEDs theoretically and experimentally. Through simulation using commercial advanced physical models of semiconductor devices (APSYS), we found that low tunnel resistance can be achieved in the n(+)-GaN/u-InGaN/p(+)-GaN TJ, which has a lower tunneling barrier and an enhanced electric field due to the polarization effect. Graphene TCEs and hybrid graphene-TJ TCEs are then modeled. The designed hybrid TJ-graphene TCEs show sufficient current diffusion length (Ls), low introduced series resistance, and high transmittance. The assembled TJ LED with the triple-layer graphene (TLG) TCEs show comparable optoelectrical performance (3.99 V@20 mA, LOP = 10.8 mW) with the reference LED with ITO TCEs (3.36 V@20 mA, LOP = 12.6 mW). The experimental results further prove that the TJ-graphene structure can be successfully incorporated as TCEs for lateral nitride LEDs.

Photon-Assisted Resonant Tunneling and 2-D Plasmon Modes in Double Quantum Wells in Intense Terahertz Electric Fields

NASA Astrophysics Data System (ADS)

Peralta, X. G.; Allen, S. J.; Lin, S. Y.; Simmons, J. A.; Blount, M. A.; Baca, W. E.

1998-03-01

We explore photon-assisted resonant tunneling in double quantum well systems in intense terahertz electric fields that have separately- contacted wells. We have two goals in mind: 1) increase the basic understanding of photon assisted tunneling in semiconductors and 2) assess the potential of this structure as a detector. We can control the tunneling current by varying the electron density of each 2D electron gas or by changing the relative separation of the Fermi levels. This allows us to prepare the system in such a way that photons of the appropriate energy may induce resonant tunneling, which is monitored by a change in conductance. We also examine the possible enhancement of the resonant tunneling by resonant excitations of acoustic plasmon modes. This work is supported by ONR, the U. S. Dept. of Energy under Contract DE-AC04-94AL85000 and Consejo Nacional de Ciencia y Tecnología, México.

Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures

NASA Astrophysics Data System (ADS)

Rong, Taotao; Yang, Lin-An; Yang, Lin; Hao, Yue

2018-01-01

In this work, we report an investigation of resonant tunneling diodes (RTDs) with lattice-matched and polarization-matched AlInN/GaN heterostructures using the numerical simulation. Compared with the lattice-matched AlInN/GaN RTDs, the RTDs based on polarization-matched AlInN/GaN hetero-structures exhibit symmetrical conduction band profiles due to eliminating the polarization charge discontinuity, which achieve the equivalence of double barrier transmission coefficients, thereby the relatively high driving current, the high symmetry of current density, and the high peak-to-valley current ratio (PVCR) under the condition of the positive and the negative sweeping voltages. Simulations show that the peak current density approaches 1.2 × 107 A/cm2 at the bias voltage of 0.72 V and the PVCR approaches 1.37 at both sweeping voltages. It also shows that under the condition of the same shallow energy level, when the trap density reaches 1 × 1019 cm-3, the polarization-matched RTDs still have acceptable negative differential resistance (NDR) characteristics, while the NDR characteristics of lattice-matched RTDs become irregular. After introducing the deeper energy level of 1 eV into the polarization-matched and lattice-matched RTDs, 60 scans are performed under the same trap density. Simulation results show that the degradation of the polarization-matched RTDs is 22%, while lattice-matched RTDs have a degradation of 55%. It can be found that the polarization-matched RTDs have a greater defect tolerance than the lattice-matched RTDs, which is beneficial to the available manufacture of actual terahertz RTD devices.

The impact of disorder on charge transport in three dimensional quantum dot resonant tunneling structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puthen-Veettil, B., E-mail: b.puthen-veettil@unsw.edu.au; Patterson, R.; König, D.

Efficient iso-entropic energy filtering of electronic waves can be realized through nanostructures with three dimensional confinement, such as quantum dot resonant tunneling structures. Large-area deployment of such structures is useful for energy selective contacts but such configuration is susceptible to structural disorders. In this work, the transport properties of quantum-dot-based wide-area resonant tunneling structures, subject to realistic disorder mechanisms, are studied. Positional variations of the quantum dots are shown to reduce the resonant transmission peaks while size variations in the device are shown to reduce as well as broaden the peaks. Increased quantum dot size distribution also results in amore » peak shift to lower energy which is attributed to large dots dominating transmission. A decrease in barrier thickness reduces the relative peak height while the overall transmission increases dramatically due to lower “series resistance.” While any shift away from ideality can be intuitively expected to reduce the resonance peak, quantification allows better understanding of the tolerances required for fabricating structures based on resonant tunneling phenomena/.« less

Resonant tunneling of spin-wave packets via quantized states in potential wells.

PubMed

Hansen, Ulf-Hendrik; Gatzen, Marius; Demidov, Vladislav E; Demokritov, Sergej O

2007-09-21

We have studied the tunneling of spin-wave pulses through a system of two closely situated potential barriers. The barriers represent two areas of inhomogeneity of the static magnetic field, where the existence of spin waves is forbidden. We show that for certain values of the spin-wave frequency corresponding to the quantized spin-wave states existing in the well formed between the barriers, the tunneling has a resonant character. As a result, transmission of spin-wave packets through the double-barrier structure is much more efficient than the sequent tunneling through two single barriers.

Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers.

PubMed

Summerfield, Alex; Kozikov, Aleksey; Cheng, Tin S; Davies, Andrew; Cho, Yong-Jin; Khlobystov, Andrei N; Mellor, Christopher J; Foxon, C Thomas; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novoselov, Kostya S; Novikov, Sergei V; Beton, Peter H

2018-06-27

Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré superlattice between the hBN and an underlying highly ordered pyrolytic graphite (HOPG) substrate. This variation is attributed to a periodc modulation of the local density of states and occurs for both exfoliated hBN barriers and epitaxially grown layers. The epitaxial barriers also exhibit enhanced conductance at localized subnanometer regions which are attributed to exposure of the substrate to a nitrogen plasma source during the high temperature growth process. Our results show clearly a spatial periodicity of tunnel current due to the formation of a moiré superlattice and we argue that this can provide a mechanism for elastic scattering of charge carriers for similar interfaces embedded in graphene/hBN resonant tunnel diodes.

Comparing resonant photon tunneling via cavity modes and Tamm plasmon polariton modes in metal-coated Bragg mirrors.

PubMed

Leosson, K; Shayestehaminzadeh, S; Tryggvason, T K; Kossoy, A; Agnarsson, B; Magnus, F; Olafsson, S; Gudmundsson, J T; Magnusson, E B; Shelykh, I A

2012-10-01

Resonant photon tunneling was investigated experimentally in multilayer structures containing a high-contrast (TiO(2)/SiO(2)) Bragg mirror capped with a semitransparent gold film. Transmission via a fundamental cavity resonance was compared with transmission via the Tamm plasmon polariton resonance that appears at the interface between a metal film and a one-dimensional photonic bandgap structure. The Tamm-plasmon-mediated transmission exhibits a smaller dependence on the angle and polarization of the incident light for similar values of peak transmission, resonance wavelength, and finesse. Implications for transparent electrical contacts based on resonant tunneling structures are discussed.

Atomic resolution ultrafast scanning tunneling microscope with scan rate breaking the resonant frequency of a quartz tuning fork resonator.

PubMed

Li, Quanfeng; Lu, Qingyou

2011-05-01

We present an ultra-fast scanning tunneling microscope with atomic resolution at 26 kHz scan rate which surpasses the resonant frequency of the quartz tuning fork resonator used as the fast scan actuator. The main improvements employed in achieving this new record are (1) fully low voltage design (2) independent scan control and data acquisition, where the tuning fork (carrying a tip) is blindly driven to scan by a function generator with the scan voltage and tunneling current (I(T)) being measured as image data (this is unlike the traditional point-by-point move and measure method where data acquisition and scan control are switched many times).

Spin-Torque Diode Effect in Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Suzuki, Yoshishige

2007-03-01

Spin-injection magnetization switching (SIMS) technique [1] made it possible to control magnetization by a direct current. A discovery of spontaneous rf oscillation from CPP-GMR nano-pillars and a real time observation of the switching process have revealed essential amplification function of a precession in the magnetic nano-pillars under a direct current [2]. Beside of those progresses, developments of giant tunneling magneto-resistive (GTMR) effect using an MgO barrier [3] made it possible to utilize a very large resistance change according to the magnetization switching. In this talk, several attempts to utilize interplay between spin-torque and giant-TMR effect will be presented referring to a ``spin-torque diode effect'' [4] and other properties such like rf noise control and possible signal amplification using magnetic tunnel junctions (MTJs). [1] J. C. Slonczewski, J. Magn. Magn. Mater. 159, L1 (1996) , L. Berger, Phys. Rev. B 54, 9353 (1996), and E. B. Myers, et al., Science 285, 867 (1999). [2] S. I. Kiselev et al., Nature 425, 380 (2003), I. N. Krivorotov et al., Science, 307, 228 (2005). [3] W. Wulfhekel, et al. Appl. Phys. Lett. 78, 509--511 (2001), M. Bowen, et al. Appl. Phys. Lett. 79, 1655--1657 (2001), J. Faure-Vincent, et al. Appl. Phys. Lett. 82, 4507--4509 (2003), S. Yuasa, et al., Jpn. J. Appl. Phys. Part 2, 43, L588 (2004), S. Yuasa, et al., Nature Mat. 3, 868 (2004), S. S. P. Parkin et al., Nature Mat. 3, 862 (2004), and D. D. Djayaprawira et al., Appl. Phys. Lett. 86, 092502 (2005). [4] A. A. Tulapurkar, et al., Nature, 438, 339 (2005).

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Study of tunneling transport in Si-based tunnel field-effect transistors with ON current enhancement utilizing isoelectronic trap

NASA Astrophysics Data System (ADS)

Mori, Takahiro; Morita, Yukinori; Miyata, Noriyuki; Migita, Shinji; Fukuda, Koichi; Mizubayashi, Wataru; Masahara, Meishoku; Yasuda, Tetsuji; Ota, Hiroyuki

2015-02-01

The temperature dependence of the tunneling transport characteristics of Si diodes with an isoelectronic impurity has been investigated in order to clarify the mechanism of the ON-current enhancement in Si-based tunnel field-effect transistors (TFETs) utilizing an isoelectronic trap (IET). The Al-N complex impurity was utilized for IET formation. We observed three types of tunneling current components in the diodes: indirect band-to-band tunneling (BTBT), trap-assisted tunneling (TAT), and thermally inactive tunneling. The indirect BTBT and TAT current components can be distinguished with the plot described in this paper. The thermally inactive tunneling current probably originated from tunneling consisting of two paths: tunneling between the valence band and the IET trap and tunneling between the IET trap and the conduction band. The probability of thermally inactive tunneling with the Al-N IET state is higher than the others. Utilization of the thermally inactive tunneling current has a significant effect in enhancing the driving current of Si-based TFETs.

Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy.

PubMed

Elsen, M; Jaffrès, H; Mattana, R; Tran, M; George, J-M; Miard, A; Lemaître, A

2007-09-21

We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.

Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

2018-02-01

Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x < 0.023 and Δ y < 0.023. A device with a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) buffer layer was beneficial for hole tunneling to the emission layer, resulting in a 1.45-fold increase in current density. The tunneling of holes and the diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

Numerical simulation of tunneling through arbitrary potential barriers applied on MIM and MIIM rectenna diodes

NASA Astrophysics Data System (ADS)

Abdolkader, Tarek M.; Shaker, Ahmed; Alahmadi, A. N. M.

2018-07-01

With the continuous miniaturization of electronic devices, quantum-mechanical effects such as tunneling become more effective in many device applications. In this paper, a numerical simulation tool is developed under a MATLAB environment to calculate the tunneling probability and current through an arbitrary potential barrier comparing three different numerical techniques: the finite difference method, transfer matrix method, and transmission line method. For benchmarking, the tool is applied to many case studies such as the rectangular single barrier, rectangular double barrier, and continuous bell-shaped potential barrier, each compared to analytical solutions and giving the dependence of the error on the number of mesh points. In addition, a thorough study of the J ‑ V characteristics of MIM and MIIM diodes, used as rectifiers for rectenna solar cells, is presented and simulations are compared to experimental results showing satisfactory agreement. On the undergraduate level, the tool provides a deeper insight for students to compare numerical techniques used to solve various tunneling problems and helps students to choose a suitable technique for a certain application.

Generation of high-power terahertz radiation by nonlinear photon-assisted tunneling transport in plasmonic metamaterials

NASA Astrophysics Data System (ADS)

Chen, Pai-Yen; Salas, Rodolfo; Farhat, Mohamed

2017-12-01

We propose an optoelectronic terahertz oscillator based on the quantum tunneling effect in a plasmonic metamaterial, utilizing a nanostructured metal-insulator-metal (MIM) tunneling junction. The collective resonant response of meta-atoms can achieve >90% optical absorption and strongly localized optical fields within the MIM plasmonic nanojunction. By properly tailoring the radiation aperture, the nonlinear quantum conductance induced by the metamaterial-enhanced, photon-assisted tunneling may produce miliwatt-level terahertz radiation through the optical beating (or heterodyne down conversion) of two lasers with a slight frequency offset. We envisage that the interplay between photon-assisted tunneling and plasmon coupling within the MIM metamaterial/diode may substantially enhance the modulated terahertz photocurrent, and may therefore realize a practical high-power, room-temperature source in applications of terahertz electronics.

Carpal tunnel and median nerve volume changes after tunnel release in patients with the carpal tunnel syndrome: a magnetic resonance imaging (MRI) study.

PubMed

Crnković, T; Trkulja, V; Bilić, R; Gašpar, D; Kolundžić, R

2016-05-01

Our aim was to study the dynamics of the post-surgical canal and nerve volumes and their relationships to objective [electromyoneurography (EMNG)] and subjective (pain) outcomes. Forty-seven patients with carpal tunnel syndrome (CTS) (median age 52, range 23-75 years) with a prominent narrowing of the median nerve within the canal (observed during carpal tunnel release) were evaluated clinically using EMNG and magnetic resonance imagining (MRI) before and at 90 and 180 days post-surgery. Canal and nerve volumes increased, EMNG findings improved and pain resolved during the follow-up. Increase in tunnel volume was independently associated with increased nerve volume. A greater post-surgical nerve volume was independently associated with a more prominent resolution of pain, but not with the extent of EMNG improvement, whereas EMNG improvement was not associated with pain resolution. Data confirm that MRI can detect even modest changes in the carpal tunnel and median nerve volume and that tunnel release results in tunnel and nerve-volume increases that are paralleled by EMNG and clinical improvements. Taken together, these observations suggest that MRI could be used to objectivise persistent post-surgical difficulties in CTS patients. Level of evidence 3 (follow-up study).

Multiphase Oscillator Using Traveling Pulses Developed in a System of Transmission Lines with Regularly Spaced Resonant-tunneling Diodes

NASA Astrophysics Data System (ADS)

Narahara, Koichi

2017-06-01

A scheme is proposed for generating multiphase oscillatory signals in millimeter-wave frequencies based on the dynamics of a traveling pulse developed in a closed transmission line periodically loaded with resonant-tunneling diodes (RTDs) that is coupled with several straight RTD lines. When supplied with an appropriate voltage at the end of an RTD line, a pulse edge is shown to exhibit a spatially extended limit-cycle oscillation on the line. We consider the case where several RTD lines are connected halfway to a closed one at even intervals. In this case, the oscillatory edge developed in each straight RTD line is mutually synchronized such that a pulse-shaped rotary traveling wave develops on the closed RTD line. The oscillating edge on each straight line is also synchronized with the traveling pulse on the closed line, such that the leading edge of the traveling pulse on the closed line and the forward edge on the straight line pass the cross point simultaneously. As a result, when N L straight lines are connected to the closed line, the phase difference between two adjacent oscillatory edges becomes 2 π/ N L . On the other hand, the trailing edge of the traveling pulse at the cross point breaks the voltage wave on the straight line into two pieces, one of which travels forward to form a solitary wave and the other of which travels backward to reach the input end, where it is reflected and starts to travel forward and this forward moving edge is supposed to be synchronized with the leading edge of the traveling pulse. It means that a back-and-forth edge and a forward-moving solitary wave develop periodically on each straight line. Because the time required for the traveling pulse to go around the closed line must be coincident with the period of the edge oscillation on each straight line, a unique traveling pulse cannot synchronize with each oscillating edge when the cell size of the closed line becomes large, resulting in the development of multiple traveling

Tunneling anisotropic magnetoresistance driven by resonant surface states: first-principles calculations on an Fe(001) surface.

PubMed

Chantis, Athanasios N; Belashchenko, Kirill D; Tsymbal, Evgeny Y; van Schilfgaarde, Mark

2007-01-26

Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes. We find that spin-flip scattering at the interface is controlled not only by the strength of the spin-orbit coupling, but depends strongly on the intrinsic width of the resonant surface states.

Structural and Electrical-Optical Characterizations of Semiconductor-Atomic Superlattice

DTIC Science & Technology

2007-05-01

and Avalanche diodes certainly fall into this category. Resonant tunneling diodes like Esaki Tunnel diodes are NDC devices belong to a class where...Heterostructures, Eds. M. Dutta and M. Stroscio, (World Sci. 2003, Singapore), p221 177 Cooling by Inverse Nottingham Effect with Resonant Tunneling ...controlled emitter, V. Semet, V.T. Binh, J.Zhang, J.Yang, M.A. Khan, and R. Tsu, APL. 84,1937 (2004) 186 Stability Issues in Tunneling via Quantum

Fractional charge revealed in computer simulations of resonant tunneling in the fractional quantum Hall regime.

PubMed

Tsiper, E V

2006-08-18

The concept of fractional charge is central to the theory of the fractional quantum Hall effect. Here I use exact diagonalization as well as configuration space renormalization to study finite clusters which are large enough to contain two independent edges. I analyze the conditions of resonant tunneling between the two edges. The "computer experiment" reveals a periodic sequence of resonant tunneling events consistent with the experimentally observed fractional quantization of electric charge in units of e/3 and e/5.

Acoustic evaluation of the Helmholtz resonator treatment in the NASA Lewis 8- by 6-foot supersonic wind tunnel

NASA Technical Reports Server (NTRS)

Heidelberg, Laurence J.; Gordon, Elliot B.

1989-01-01

The acoustic consequences of sealing the Helmholtz resonators of the NASA Lewis 8- by 6-Foot Supersonic Wind Tunnel (8x6 SWT) were experimentally evaluated. This resonator sealing was proposed in order to avoid entrapment of hydrogen during tests of advanced hydrogen-fueled engines. The resonators were designed to absorb energy in the 4- to 20-Hz range; thus, this investigation is primarily concerned with infrasound. Limited internal and external noise measurements were made at tunnel Mach numbers ranging from 0.5 to 2.0. Although the resonators were part of the acoustic treatment installed because of a community noise problem their sealing did not seem to indicate a reoccurrence of the problem would result. Two factors were key to this conclusion: (1) A large bulk treatment muffler downstream of the resonators was able to make up for much of the attenuation originally provided by the resonators, and (2) there was no noise source in the tunnel test section. The previous community noise problem occurred when a large ramjet was tested in an open-loop tunnel configuration. If a propulsion system producing high noise levels at frequencies of less than 10 Hz were tested, the conclusion on community noise would have to be reevaluated.

Resonant pair tunneling in double quantum dots.

PubMed

Sela, Eran; Affleck, Ian

2009-08-21

We present exact results on the nonequilibrium current fluctuations for 2 quantum dots in series throughout a crossover from non-Fermi liquid to Fermi liquid behavior described by the 2 impurity Kondo model. The result corresponds to resonant tunneling of carriers of charge 2e for a critical interimpurity coupling. At low energy scales, the result can be understood from a Fermi liquid approach that we develop and use to also study nonequilibrium transport in an alternative double dot realization of the 2 impurity Kondo model under current experimental study.

Vertical resonant tunneling transistors with molecular quantum dots for large-scale integration.

PubMed

Hayakawa, Ryoma; Chikyow, Toyohiro; Wakayama, Yutaka

2017-08-10

Quantum molecular devices have a potential for the construction of new data processing architectures that cannot be achieved using current complementary metal-oxide-semiconductor (CMOS) technology. The relevant basic quantum transport properties have been examined by specific methods such as scanning probe and break-junction techniques. However, these methodologies are not compatible with current CMOS applications, and the development of practical molecular devices remains a persistent challenge. Here, we demonstrate a new vertical resonant tunneling transistor for large-scale integration. The transistor channel is comprised of a MOS structure with C 60 molecules as quantum dots, and the structure behaves like a double tunnel junction. Notably, the transistors enabled the observation of stepwise drain currents, which originated from resonant tunneling via the discrete molecular orbitals. Applying side-gate voltages produced depletion layers in Si substrates, to achieve effective modulation of the drain currents and obvious peak shifts in the differential conductance curves. Our device configuration thus provides a promising means of integrating molecular functions into future CMOS applications.

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fen; Chen, Aixi; Institute for Quantum Computing & Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON N2L 3G1 Canada

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter barrier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disappears when LiF gets thick enough and recovers its intrinsicmore » properties.« less

Magnetic-field-controlled negative differential conductance in scanning tunneling spectroscopy of graphene npn junction resonators

NASA Astrophysics Data System (ADS)

Li, Si-Yu; Liu, Haiwen; Qiao, Jia-Bin; Jiang, Hua; He, Lin

2018-03-01

Negative differential conductance (NDC), characterized by the decreasing current with increasing voltage, has attracted continuous attention for its various novel applications. The NDC typically exists in a certain range of bias voltages for a selected system and controlling the regions of NDC in curves of current versus voltage (I -V ) is experimentally challenging. Here, we demonstrate a magnetic-field-controlled NDC in scanning tunneling spectroscopy of graphene npn junction resonators. The magnetic field not only can switch on and off the NDC, but also can continuously tune the regions of the NDC in the I -V curves. In the graphene npn junction resonators, magnetic fields generate sharp and pronounced Landau-level peaks with the help of the Klein tunneling of massless Dirac fermions. A tip of scanning tunneling microscope induces a relatively shift of the Landau levels in graphene beneath the tip. Tunneling between the misaligned Landau levels results in the magnetic-field-controlled NDC.

A theory for predicting boundary impedance and resonance frequencies of slotted-wall wind tunnels, including plenum effects

NASA Technical Reports Server (NTRS)

Barger, R. L.

1981-01-01

Wave-induced resonance associated with the geometry of wind-tunnel test sections can occur. A theory that uses acoustic impedance concepts to predict resonance modes in a two dimensional, slotted wall wind tunnel with a plenum chamber is described. The equation derived is consistent with known results for limiting conditions. The computed resonance modes compare well with appropriate experimental data. When the theory is applied to perforated wall test sections, it predicts the experimentally observed closely spaced modes that occur when the wavelength is not long compared with he plenum depth.

Electronic resonant tunneling on graphene superlattice heterostructures with a tunable graphene layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Shan; Cui, Liyong; Liu, Fen

We have theoretically investigated the electronic resonant tunneling effect in graphene superlattice heterostructures, where a tunable graphene layer is inserted between two different superlattices. It is found that a complete tunneling state appears inside the enlarged forbidden gap of the heterostructure by changing the thickness of the inserted graphene layer and the transmittance of the tunneling state depends on the thickness of the inserted layer. Furthermore, the frequency of the tunneling state changes with the thickness of the inserted graphene layer but it always located in the little overlapped forbidden gap of two graphene superlattices. Therefore, both a perfect tunnelingmore » state and an ultrawide forbidden gap are realized in such heterostrutures. Since maximum probability densities of the perfect tunneling state are highly localized near the interface between the inserted graphene layer and one graphene superlattice, it can be named as an interface-like state. Such structures are important to fabricate high-Q narrowband electron wave filters.« less

Generation of constant-amplitude radio-frequency sweeps at a tunnel junction for spin resonance STM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, William; Lutz, Christopher P.; Heinrich, Andreas J.

2016-07-15

We describe the measurement and successful compensation of the radio-frequency transfer function of a scanning tunneling microscope over a wide frequency range (15.5–35.5 GHz) and with high dynamic range (>50 dB). The precise compensation of cabling resonances and attenuations is critical for the production of constant-voltage frequency sweeps for electric-field driven electron spin resonance (ESR) experiments. We also demonstrate that a well-calibrated tunnel junction voltage is necessary to avoid spurious ESR peaks that can arise due to a non-flat transfer function.

Triangulating the source of tunneling resonances in a point contact with nanometer scale sensitivity

NASA Astrophysics Data System (ADS)

Bishop, N. C.; Boras Pinilla, C.; Stalford, H. L.; Young, R. W.; Ten Eyck, G. A.; Wendt, J. R.; Eng, K.; Lilly, M. P.; Carroll, M. S.

2011-03-01

We observe resonant tunneling in split gate point contacts defined in a double gate enhancement mode Si-MOS device structure. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position [Stalford et al., IEEE Nanotechnology], identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor. This work was supported by the Laboratory Directed Research and Development program at Sandia National Laboratories. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

Helium isotope enrichment by resonant tunneling through nanoporous graphene bilayers.

PubMed

Mandrà, Salvatore; Schrier, Joshua; Ceotto, Michele

2014-08-21

Graphene is impermeable to gases, but introducing subnanometer pores can allow for selective gas separation. Because graphene is only one atom thick, tunneling can play an important role, especially for low-mass gases such as helium, and this has been proposed as a means of separating (3)He from (4)He. In this paper, we consider the possibility of utilizing resonant tunneling of helium isotopes through nanoporous graphene bilayers. Using a model potential fit to previously reported DFT potential energy surfaces, we calculate the thermal rate constant as a function of interlayer separation using a recently described time-independent method for arbitrary multibarrier potentials. Resonant transmission allows for the total flux rate of (3)He to remain the same as the best-known single-barrier pores but doubles the selectivity with respect to (4)He when the optimal interlayer spacing of 4.6 Å is used. The high flux rate and selectivity are robust against variations of the interlayer spacing and asymmetries in the potential that may occur in experiment.

Silicon nanowire Esaki diodes.

PubMed

Schmid, Heinz; Bessire, Cedric; Björk, Mikael T; Schenk, Andreas; Riel, Heike

2012-02-08

We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up to 300 kA/cm(2) at 0.5 V reverse bias. Strain-dependent current-voltage (I-V) measurements exhibit a decrease of the peak tunnel current with uniaxial tensile stress and an increase of 48% for 1.3 GPa compressive stress along the <111> growth direction, revealing the strain dependence of the Si band structure and thus the tunnel barrier. The contributions of phonons to the indirect tunneling process were probed by conductance measurements at 4.2 K. These measurements show phonon peaks at energies corresponding to the transverse acoustical and transverse optical phonons. In addition, the low-temperature conductance measurements were extended to higher biases to identify potential impurity states in the band gap. The results demonstrate that the most likely impurity, namely, Au from the catalyst particle, is not detectable, a finding that is also supported by the excellent device properties of the Esaki diodes reported here. © 2012 American Chemical Society

Esaki diodes live and learn.

PubMed

Esaki, Leo; Kitamura, Masatoshi; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-01-01

We report, as the result of shelf-life tests for Esaki diodes, the observation of minute but tangible reductions in the tunnel current after the lapse of half a century. The reduction could be attributed to 0.25% widening in the tunnel path.

Esaki diodes live and learn

PubMed Central

Esaki, Leo; Kitamura, Masatoshi; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-01-01

We report, as the result of shelf-life tests for Esaki diodes, the observation of minute but tangible reductions in the tunnel current after the lapse of half a century. The reduction could be attributed to 0.25% widening in the tunnel path. PMID:20431267

On the lasing-like transmission via radiation-mode-enabled TE resonant optical tunneling in asymmetric, passive, layered media with metal.

PubMed

Chang, Yin-Jung

2014-11-17

Transverse-electric (TE) resonant optical tunneling through an asymmetric, single-barrier potential system consisting of all passive materials in two-dimensional (2-D) glass/silver/TiO₂/air configuration is quantified at a silver thickness of 35 nm. Resonant tunneling occurs when the incident condition corresponds to the excitation of a radiation mode. Lasing-like transmission occurring at resonance is carefully qualified in terms of power conservation, resonance condition, and identification of the gain medium equivalent. In particular, effective gain (geff) and threshold gain (gth) coefficients, both of which are strong functions of the forward reflection coefficient at the silver-TiO₂ interface, are analytically obtained and the angular span over which geff > gth is further verified rigorously electromagnetically. The results show that the present configuration may be treated as a cascade of the gain equivalent (i.e. the silver film) and the TiO₂resonator that is of Fabry-Perot type, giving rise to negative gth when resonant tunneling occurs. The transmittance spectrum exhibiting a gain-curve-like envelope is shown to be a direct consequence of the competition of the resonator loss at the silver-TiO₂interface and the forward tunneling probability through the silver barrier, all controlled by the effective silver barrier thickness.

Optofluidic refractometer using resonant optical tunneling effect.

PubMed

Jian, A Q; Zhang, X M; Zhu, W M; Yu, M

2010-12-30

This paper presents the design and analysis of a liquid refractive index sensor that utilizes a unique physical mechanism of resonant optical tunneling effect (ROTE). The sensor consists of two hemicylindrical prisms, two air gaps, and a microfluidic channel. All parts can be microfabricated using an optical resin NOA81. Theoretical study shows that this ROTE sensor has extremely sharp transmission peak and achieves a sensitivity of 760 nm∕refractive index unit (RIU) and a detectivity of 85 000 RIU(-1). Although the sensitivity is smaller than that of a typical surface plasmon resonance (SPR) sensor (3200 nm∕RIU) and is comparable to a 95% reflectivity Fabry-Pérot (FP) etalon (440 nm∕RIU), the detectivity is 17 000 times larger than that of the SPR sensor and 85 times larger than that of the FP etalon. Such ROTE sensor could potentially achieve an ultrahigh sensitivity of 10(-9) RIU, two orders higher than the best results of current methods.

First resonant tunneling via a light-hole ground state

NASA Astrophysics Data System (ADS)

Lampin, J. F.; Mollot, F.

1998-07-01

We report the demonstration of resonant tunneling of light-holes through an AlAs/GaAs 0.7P 0.3 double-barrier heterostructure. The tensile strain in the quantum well reverses the order of the light- and heavy-hole levels, the first light-hole level becoming the ground state. The I( V) characteristics are measured at different temperatures and compared to those of a standard AlAs/GaAs unstrained structure. The peak current density of the first light-hole resonance and its peak-to-valley current ratio are enhanced. They reach 28 A/cm 2 and 3.4 : 1 at 15 K. A negative differential resistance is observed up to 250 K.

Probing noise in flux qubits via macroscopic resonant tunneling.

PubMed

Harris, R; Johnson, M W; Han, S; Berkley, A J; Johansson, J; Bunyk, P; Ladizinsky, E; Govorkov, S; Thom, M C; Uchaikin, S; Bumble, B; Fung, A; Kaul, A; Kleinsasser, A; Amin, M H S; Averin, D V

2008-09-12

Macroscopic resonant tunneling between the two lowest lying states of a bistable rf SQUID is used to characterize noise in a flux qubit. Measurements of the incoherent decay rate as a function of flux bias revealed a Gaussian-shaped profile that is not peaked at the resonance point but is shifted to a bias at which the initial well is higher than the target well. The rms amplitude of the noise, which is proportional to the dephasing rate 1/tauphi, was observed to be weakly dependent on temperature below 70 mK. Analysis of these results indicates that the dominant source of low energy flux noise in this device is a quantum mechanical environment in thermal equilibrium.

Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions.

PubMed

Song, Yang; Dery, Hanan

2014-07-25

We present a theory for resonance-tunneling magnetoresistance (MR) in ferromagnetic-insulator-nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with the important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused by competition between the field, spin interactions, and coupling to the magnetic lead. By extending the theory, we present a basis for operation of novel nanometer-size memories.

Resonant tunneling in nanocolumns improved by quantum collimation.

PubMed

Wensorra, Jakob; Indlekofer, Klaus Michael; Lepsa, Mihail Ion; Förster, Arno; Lüth, Hans

2005-12-01

We report on a quantum collimation effect based on surface depletion regions in AlAs/GaAs nanocolumns with an embedded resonant tunneling structure. The considered MBE-grown nanodevices have been fabricated by means of a top-down approach that employs a reproducible lithographic definition of the vertical nanocolumns. By analyzing the scaling properties of these nanodevices, we discuss how a collimation effect due to a saddle point in the confining potential can explain an improved device performance of the ultimately scaled structures at room temperature.

Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y.; Chu, R.; Li, R.

2016-03-14

In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10{sup −7} A to 3.9 × 10{sup −4} A as n increased from 7.5 × 10{sup 14 }cm{sup −3} to 6.3 × 10{sup 15 }cm{sup −3} at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, themore » polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.« less

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

Diode laser based resonance ionization mass spectrometric measurement of strontium-90

NASA Astrophysics Data System (ADS)

Bushaw, B. A.; Cannon, B. D.

1997-10-01

A diode laser based scheme for the isotopically selective excitation and ionization of strontium is presented. The double-resonance excitation 5s 21S 0→5s5p 3P 1→5s6s 3S 1 is followed by photoionization at 488 nm. The isotope shifts and hyperfine structure in the resonance transitions have been accurately measured for the stable isotopes and 90Sr, with the measurement of the 90Sr shifts using sub-pg samples. Analytical tests, using graphite crucible atomization, demonstrated 90Sr detection limits of 0.8 fg and overall (optical+mass spectrometer) isotopic selectivity of >10 10 against stable strontium.

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

NASA Astrophysics Data System (ADS)

Kuwano, Yuka; Kaga, Mitsuru; Morita, Takatoshi; Yamashita, Kouji; Yagi, Kouta; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2013-08-01

We demonstrated lateral Mg activation along p-GaN layers underneath n-GaN surface layers in nitride-based light emitting diodes (LEDs) with GaInN tunnel junctions. A high temperature thermal annealing was effective for the lateral Mg activation when the p-GaN layers were partly exposed to an oxygen ambient as etched sidewalls. The activated regions gradually extended from the etched sidewalls to the centers with an increase of annealing time, observed as emission regions with current injection. These results suggest that hydrogen diffuses not vertically thorough the above n-GaN but laterally through the exposed portions of the p-GaN. The lowest voltage drop at the GaInN tunnel junction was estimated to be 0.9 V at 50 mA with the optimized annealing condition.

Time-of-flight Measurement Of Hole-tunneling Properties And Emission Color Control In Organic Light-emitting Diodes

NASA Astrophysics Data System (ADS)

Kurata, K.; Kashiwabara, K.; Nakajima, K.; Mizoguchi, Y.; Ohtani, N.

2011-12-01

Hole transport properties of organic light-emitting diodes (OLEDs) with a thin hole-blocking layer (HBL) were evaluated by time-of-flight measurement. Electroluminescence (EL) spectra of OLEDs with various HBL thicknesses were also evaluated. The results clearly show that the time-resolved photocurrent response and the emission color strongly depend on HBL thickness. This can be attributed to hole-tunneling through the thin HBL. We successfully fabricated a white OLED by controlling the thickness of HBL.

Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures.

PubMed

Ertler, Christian; Fabian, Jaroslav

2008-08-15

The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic region not only induces, but also takes part in intrinsic, robust, and sustainable high-frequency current oscillations over a large window of nominally steady bias voltages. This phenomenon could spawn a new class of quantum electronic devices based on ferromagnetic semiconductors.

Resonantly diode-pumped eye-safe Er:YAG laser with fiber-shaped crystal

NASA Astrophysics Data System (ADS)

Němec, Michal; Šulc, Jan; Hlinomaz, Kryštof; Jelínková, Helena; Nejezchleb, Karel; Čech, Miroslav

2018-02-01

Solid-state eye-safe lasers are interesting sources for various applications, such as lidar, remote sensing, and ranging. A resonantly diode-pumped Er:YAG laser could be one of them allowing to reach a tunable laser emission in 1.6 μm spectral region. To overcome low pump absorption and poor pumping beam quality generated by commercially available laser diode, an active medium could be formed to long and thin laser rod guiding pumping radiation. Such an effective cooling during a high power pumping, which is a "crystal-fiber" benefit, may be useful for "standard" crystal active medium. The main goal of this work was to investigate the laser characteristics of new developed Er:YAG crystal with a special shape for diode-pumping. Er:YAG fiber-shape crystal with square cross-section (1x1mm) and 40mm in length was doped by 0.1% Er3+ ions. All sides of this crystal were polished and in addition the end-faces of it were antireflection coatings for the wavelength 1470 and 1645 nm. As a pump system, a fiber coupled laser diode (f = 10 Hz, t = 10 ms) emitting radiation at 1465 nm wavelength was used. Er:YAG fiber-shape crystal was placed onto a copper holder in the 85 mm long plan-concave resonator consisting of a pump flat mirror and output curved (r = 150 mm) coupler with a reflectivity of 96 % @ 1645 nm. The dependence of the output peak power on absorbed pump power was investigated and the maximum 0.8 W was obtained. The corresponding slope efficiency was 14.5 %. The emitting wavelength was equaled to 1645 nm (4 nm linewidth, FWHM). The spatial beam structure was close to the Gaussian mode.

Air gap resonant tunneling bandpass filter and polarizer.

PubMed

Melnyk, A; Bitarafan, M H; Allen, T W; DeCorby, R G

2016-04-15

We describe a bandpass filter based on resonant tunneling through an air layer in the frustrated total internal reflection regime, and show that the concept of induced transmission can be applied to the design of thin film matching stacks. Experimental results are reported for Si/SiO2-based devices exhibiting a polarization-dependent passband, with bandwidth on the order of 10 nm in the 1550 nm wavelength range, peak transmittance on the order of 80%, and optical density greater than 5 over most of the near infrared region.

Polarization and Fowler-Nordheim tunneling in anodized Al-Al2O3-Au diodes

NASA Astrophysics Data System (ADS)

Hickmott, T. W.

2000-06-01

Polarization in anodic Al2O3 films is measured by using quasi-dc current-voltage (I-V) curves of Al-Al2O3-Au diodes. A reproducible polarization state is established by applying a negative voltage to the Au electrode of a rectifying Al-Al2O3-Au diode. The difference between subsequent I-V curves with Au positive is a measure of polarization in the sample. The magnitude of polarization charge in Al2O3 depends on the anodizing electrolyte. Al2O3 films formed in H2O-based electrolytes have approximately ten times the polarization charge of Al2O3 films formed in ethylene glycol-based electrolyte. Anodizing conditions that produce greater polarizing charge in anodic Al2O3 result in voltage-time curves during anodization under galvanostatic conditions that are nonlinear. Anodic films with greater polarizing charge also have a greater apparent interface capacitance which is independent of Al2O3 thickness. I-V curves of Al-Al2O3-Au diodes for increasing voltage are dominated by polarization. I-V curves for decreasing voltage are reproducible and parallel but depend on the maximum current and voltage reached during the measurement. There is no single current corresponding to a given voltage. I-V curves for decreasing voltage are analyzed assuming that the conduction mechanism is Fowler-Nordheim (FN) tunneling. There is a qualitative difference between the FN tunneling parameters for Al2O3 films formed in H2O-based electrolytes and those formed in ethylene glycol-based electrolyte. For the former the value of the exponential term in the FN analysis increases as the value of maximum voltage and current in an I-V characteristic increases, while the value of the pre-exponential term is nearly constant. For the latter, the exponential term is nearly constant as maximum voltage and current increase, but the pre-exponential term decreases by about 5 decades. Thus polarization charge incorporated during formation of anodized Al2O3 strongly affects the formation of the insulating

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors.

PubMed

Jahromi, Hamed Dehdashti; Mahmoodi, Ali; Sheikhi, Mohammad Hossein; Zarifkar, Abbas

2016-10-20

Reduction of dark current at high-temperature operation is a great challenge in conventional quantum dot infrared photodetectors, as the rate of thermal excitations resulting in the dark current increases exponentially with temperature. A resonant tunneling barrier is the best candidate for suppression of dark current, enhancement in signal-to-noise ratio, and selective extraction of different wavelength response. In this paper, we use a physical model developed by the authors recently to design a proper resonant tunneling barrier for quantum infrared photodetectors and to study and analyze the spectral response of these devices. The calculated transmission coefficient of electrons by this model and its dependency on bias voltage are in agreement with experimental results. Furthermore, based on the calculated transmission coefficient, the dark current of a quantum dot infrared photodetector with a resonant tunneling barrier is calculated and compared with the experimental data. The validity of our model is proven through this comparison. Theoretical dark current by our model shows better agreement with the experimental data and is more accurate than the previously developed model. Moreover, noise in the device is calculated. Finally, the effect of different parameters, such as temperature, size of quantum dots, and bias voltage, on the performance of the device is simulated and studied.

Room-temperature resonant quantum tunneling transport of macroscopic systems.

PubMed

Xiong, Zhengwei; Wang, Xuemin; Yan, Dawei; Wu, Weidong; Peng, Liping; Li, Weihua; Zhao, Yan; Wang, Xinmin; An, Xinyou; Xiao, Tingting; Zhan, Zhiqiang; Wang, Zhuo; Chen, Xiangrong

2014-11-21

A self-assembled quantum dots array (QDA) is a low dimensional electron system applied to various quantum devices. This QDA, if embedded in a single crystal matrix, could be advantageous for quantum information science and technology. However, the quantum tunneling effect has been difficult to observe around room temperature thus far, because it occurs in a microcosmic and low temperature condition. Herein, we show a designed a quasi-periodic Ni QDA embedded in a single crystal BaTiO3 matrix and demonstrate novel quantum resonant tunneling transport properties around room-temperature according to theoretical calculation and experiments. The quantum tunneling process could be effectively modulated by changing the Ni QDA concentration. The major reason was that an applied weak electric field (∼10(2) V cm(-1)) could be enhanced by three orders of magnitude (∼10(5) V cm(-1)) between the Ni QDA because of the higher permittivity of BaTiO3 and the 'hot spots' of the Ni QDA. Compared with the pure BaTiO3 films, the samples with embedded Ni QDA displayed a stepped conductivity and temperature (σ-T curves) construction.

Spatially resolved resonant tunneling on single atoms in silicon.

PubMed

Voisin, B; Salfi, J; Bocquel, J; Rahman, R; Rogge, S

2015-04-22

The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent electronic manipulation, on the dopants atomic scale properties. This requires both fine energetic and spatial resolution of the energy spectrum and wave-function, respectively. Here we present an experiment fulfilling both conditions: we perform transport on single donors in silicon close to a vacuum interface using a scanning tunneling microscope (STM) in the single electron tunneling regime. The spatial degrees of freedom of the STM tip provide a versatility allowing a unique understanding of electrostatics. We obtain the absolute energy scale from the thermal broadening of the resonant peaks, allowing us to deduce the charging energies of the donors. Finally we use a rate equations model to derive the current in presence of an excited state, highlighting the benefits of the highly tunable vacuum tunnel rates which should be exploited in further experiments. This work provides a general framework to investigate dopant-based systems at the atomic scale.

Insights on energy selective contacts for thermal energy harvesting using double resonant tunneling contacts and numerical modeling

NASA Astrophysics Data System (ADS)

Julian, A.; Jehl, Z.; Miyashita, N.; Okada, Y.; Guillemoles, J.-F.

2016-12-01

Energy selective electrical contacts have been proposed as a way to approach ultimate efficiencies both for thermoelectric and photovoltaic devices as they allow a reduction of the entropy production during the energy conversion process. A self-consistent numerical model based on the transfer matrix approach in the effective mass and envelope function approximation has been developed to calculate the electronic properties of double resonant tunneling barriers used as energy selective contacts in hot carrier solar cells. It is found that the application of an external electric bias significantly degrades the electronic transmission of the structure, and thus the tunneling current in the current-voltage characteristic. This is due to a symmetry breaking which can be offset using finely tuned asymmetric double resonant tunneling barriers, leading to a full recovery of the tunneling current in our model. Moreover, we model the heterostructure using electrons temperature in the emitter higher than that of the lattice, providing insights on the interpretation of experimental devices functioning in hot carrier conditions, especially regarding the previously reported shift of the resonance peak (negative differential resistance), which we interpret as related to a shift in the hot electron distribution while the maximum remains at the conduction band edge of the emitter. Finally, experimental results are presented using asymmetric structure showing significantly improved resonant properties at room temperature with very sharp negative differential resistance.

Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors.

PubMed

Campbell, Philip M; Tarasov, Alexey; Joiner, Corey A; Ready, William J; Vogel, Eric M

2015-05-26

Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. However, most attempts to demonstrate resonant tunneling devices, including graphene-insulator-graphene structures, have resulted in low peak-to-valley ratios, limiting their application. We theoretically demonstrate that vertical heterostructures consisting of two identical monolayer 2D transition-metal dichalcogenide semiconductor electrodes and a hexagonal boron nitride barrier result in a peak-to-valley ratio several orders of magnitude higher than the best that can be achieved using graphene electrodes. The peak-to-valley ratio is large even at coherence lengths on the order of a few nanometers, making these devices appealing for nanoscale electronics.

Latest developments in resonantly diode-pumped Er:YAG lasers

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Garbuzov, Dmitri; Dubinskii, Mark

2007-04-01

Significant performance improvement of the Er(0.5%):YAG diode pumped solid state laser (DPSSL) has been achieved by pump diode spectral narrowing via implementation of an external volumetric Bragg grating (VBG). Without spectral narrowing, with a pump path length of 15 mm, only 37% of 1532 nm pump was absorbed. After the VBG spectral narrowing, the absorption of the pumping radiation increased to 62 - 70%. As a result, the incident power threshold was reduced by a factor of 2.5, and the efficiency increased by a factor of 1.7, resulting in a slope efficiency of ~23 - 30%. A maximum of 51 W of CW power was obtained versus 31 W without the pump spectrum narrowing. More than 180 mJ QCW pulse output energy was obtained in a stable-unstable resonator configuration with a beam quality of M2 = 1.3 in the stable direction and M2 = 1.1 in the unstable direction. The measured slope efficiency was 0.138 J/J with a threshold energy of 0.91 J.

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect.

PubMed

Jian, Aoqun; Wei, Chongguang; Guo, Lifang; Hu, Jie; Tang, Jun; Liu, Jun; Zhang, Xuming; Sang, Shengbo

2017-02-17

Acceleration is a significant parameter for monitoring the status of a given objects. This paper presents a novel linear acceleration sensor that functions via a unique physical mechanism, the resonant optical tunneling effect (ROTE). The accelerometer consists of a fixed frame, two elastic cantilevers, and a major cylindrical mass comprised of a resonant cavity that is separated by two air tunneling gaps in the middle. The performance of the proposed sensor was analyzed with a simplified mathematical model, and simulated using finite element modeling. The simulation results showed that the optical Q factor and the sensitivity of the accelerometer reach up to 8.857 × 10⁷ and 9 pm/g, respectively. The linear measurement range of the device is ±130 g. The work bandwidth obtained is located in 10-1500 Hz. The results of this study provide useful guidelines to improve measurement range and resolution of integrated optical acceleration sensors.

Theoretical Analysis of an Optical Accelerometer Based on Resonant Optical Tunneling Effect

PubMed Central

Jian, Aoqun; Wei, Chongguang; Guo, Lifang; Hu, Jie; Tang, Jun; Liu, Jun; Zhang, Xuming; Sang, Shengbo

2017-01-01

Acceleration is a significant parameter for monitoring the status of a given objects. This paper presents a novel linear acceleration sensor that functions via a unique physical mechanism, the resonant optical tunneling effect (ROTE). The accelerometer consists of a fixed frame, two elastic cantilevers, and a major cylindrical mass comprised of a resonant cavity that is separated by two air tunneling gaps in the middle. The performance of the proposed sensor was analyzed with a simplified mathematical model, and simulated using finite element modeling. The simulation results showed that the optical Q factor and the sensitivity of the accelerometer reach up to 8.857 × 107 and 9 pm/g, respectively. The linear measurement range of the device is ±130 g. The work bandwidth obtained is located in 10–1500 Hz. The results of this study provide useful guidelines to improve measurement range and resolution of integrated optical acceleration sensors. PMID:28218642

Nonlinear theory of the narrow-band generation and detection of terahertz radiation in resonant tunneling heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kapaev, V. V., E-mail: kapaev@lebedev.ru

The nonlinear regime of high-frequency response for resonant tunneling structures in a time-periodic electric field has been investigated using a technique for solving the time-dependent Schrödinger equation based on a Floquet mode expansion of the wave functions. The dependences of current harmonic amplitudes on ac signal amplitude have been calculated and the limiting values of the generated field have been determined for singleand double-well resonant tunneling structures. The dynamic Stark effect is shown to play an important role in the formation of response. It leads to a quadratic (in ac field amplitude) shift in the positions of resonances E{sub r}more » in single-well structures and in double-well ones in the nonresonant case and to a splitting at resonance hν ≈ E{sub r2}–E{sub r1} (ν is the signal frequency, E{sub r1} and E{sub r2} are the energies of the size-quantization levels) in double-well structures proportional to the ac signal amplitude. The phenomenon of ac signal detection by resonant tunneling structures has been investigated. The effect of resonant direct-current amplification in double-well structures has been detected at a signal frequency satisfying the condition hν ≈ E{sub r2}–E{sub r1}. In asymmetric systems, detection is shown to be possible in the absence of a dc bias, which allows zero-biased detectors based on them to be created.« less

Resonant tunneling based graphene quantum dot memristors.

PubMed

Pan, Xuan; Skafidas, Efstratios

2016-12-08

In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.

Schlieren with a laser diode source

NASA Technical Reports Server (NTRS)

Burner, A. W.; Franke, J. M.

1981-01-01

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

A Self-Synchronized Optoelectronic Oscillator based on an RTD Photo-Detector and a Laser Diode

PubMed Central

Romeira, Bruno; Seunarine, Kris; Ironside, Charles N.; Kelly, Anthony E.; Figueiredo, José M. L.

2013-01-01

We propose and demonstrate a simple and stable low-phase noise optoelectronic oscillator (OEO) that uses a laser diode, an optical fiber delay line and a resonant tunneling diode (RTD) free-running oscillator that is monolithic integrated with a waveguide photo-detector. The RTD-OEO exhibits single-side band phase noise power below −100 dBc/Hz with more than 30 dB noise suppression at 10 kHz from the center free-running frequency for fiber loop lengths around 1.2 km. The oscillator power consumption is below 0.55 W, and can be controlled either by the injected optical power or the fiber delay line. The RTD-OEO stability is achieved without using other high-speed optical/optoelectronic components and amplification. PMID:23814452

Wave-function-renormalization effects in resonantly enhanced tunneling

NASA Astrophysics Data System (ADS)

Lörch, N.; Pepe, F. V.; Lignier, H.; Ciampini, D.; Mannella, R.; Morsch, O.; Arimondo, E.; Facchi, P.; Florio, G.; Pascazio, S.; Wimberger, S.

2012-05-01

We study the time evolution of ultracold atoms in an accelerated optical lattice. For a Bose-Einstein condensate with a narrow quasimomentum distribution in a shallow optical lattice the decay of the survival probability in the ground band has a steplike structure. In this regime we establish a connection between the wave-function-renormalization parameter Z introduced by P. Facchi, H. Nakazato, and S. Pascazio [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.86.2699 86, 2699 (2001)] to characterize nonexponential decay and the phenomenon of resonantly enhanced tunneling, where the decay rate is peaked for particular values of the lattice depth and the accelerating force.

Resonant tunneling of fluctuation Cooper pairs

PubMed Central

Galda, Alexey; Mel'nikov, A. S.; Vinokur, V. M.

2015-01-01

Superconducting fluctuations have proved to be an irreplaceable source of information about microscopic and macroscopic material parameters that could be inferred from the experiment. According to common wisdom, the effect of thermodynamic fluctuations in the vicinity of the superconducting transition temperature, Tc, is to round off all of the sharp corners and discontinuities, which otherwise would have been expected to occur at Tc. Here we report the current spikes due to radiation-induced resonant tunneling of fluctuation Cooper pairs between two superconductors which grow even sharper and more pronounced upon approach to Tc. This striking effect offers an unprecedented tool for direct measurements of fluctuation Cooper pair lifetime, which is key to our understanding of the fluctuation regime, most notably to nature of the pseudogap state in high-temperature superconductors. Our finding marks a radical departure from the conventional view of superconducting fluctuations as a blurring and rounding phenomenon. PMID:25661237

Resonant tunneling of fluctuation Cooper pairs.

PubMed

Galda, Alexey; Mel'nikov, A S; Vinokur, V M

2015-02-09

Superconducting fluctuations have proved to be an irreplaceable source of information about microscopic and macroscopic material parameters that could be inferred from the experiment. According to common wisdom, the effect of thermodynamic fluctuations in the vicinity of the superconducting transition temperature, Tc, is to round off all of the sharp corners and discontinuities, which otherwise would have been expected to occur at Tc. Here we report the current spikes due to radiation-induced resonant tunneling of fluctuation Cooper pairs between two superconductors which grow even sharper and more pronounced upon approach to Tc. This striking effect offers an unprecedented tool for direct measurements of fluctuation Cooper pair lifetime, which is key to our understanding of the fluctuation regime, most notably to nature of the pseudogap state in high-temperature superconductors. Our finding marks a radical departure from the conventional view of superconducting fluctuations as a blurring and rounding phenomenon.

Experimental study on acoustic subwavelength imaging of holey-structured metamaterials by resonant tunneling.

PubMed

Su, Haijing; Zhou, Xiaoming; Xu, Xianchen; Hu, Gengkai

2014-04-01

A holey-structured metamaterial is proposed for near-field acoustic imaging beyond the diffraction limit. The structured lens consists of a rigid slab perforated with an array of cylindrical holes with periodically modulated diameters. Based on the effective medium approach, the structured lens is characterized by multilayered metamaterials with anisotropic dynamic mass, and an analytic model is proposed to evaluate the transmission properties of incident evanescent waves. The condition is derived for the resonant tunneling, by which evanescent waves can completely transmit through the structured lens without decaying. As an advantage of the proposed lens, the imaging frequency can be modified by the diameter modulation of internal holes without the change of the lens thickness in contrast to the lens due to the Fabry-Pérot resonant mechanism. In this experiment, the lens is assembled by aluminum plates drilled with cylindrical holes. The imaging experiment demonstrates that the designed lens can clearly distinguish two sources separated in the distance below the diffraction limit at the tunneling frequency.

All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications

NASA Astrophysics Data System (ADS)

Neugebauer, S.; Hoffmann, M. P.; Witte, H.; Bläsing, J.; Dadgar, A.; Strittmatter, A.; Niermann, T.; Narodovitch, M.; Lehmann, M.

2017-03-01

We report on III-Nitride blue light emitting diodes (LEDs) comprising a GaN-based tunnel junction (TJ) all realized by metalorganic vapor phase epitaxy in a single growth process. The TJ grown atop the LED structures consists of a Mg-doped GaN layer and subsequently grown highly Ge-doped GaN. Long thermal annealing of 60 min at 800 °C is important to reduce the series resistance of the LEDs due to blockage of acceptor-passivating hydrogen diffusion through the n-type doped top layer. Secondary ion mass spectroscopy measurements reveal Mg-incorporation into the topmost GaN:Ge layer, implying a non-abrupt p-n tunnel junction and increased depletion width. Still, significantly improved lateral current spreading as compared to conventional semi-transparent Ni/Au p-contact metallization and consequently a more homogeneous electroluminescence distribution across 1 × 1 mm2 LED structures is achieved. Direct estimation of the depletion width is obtained from electron holography experiments, which allows for a discussion of the possible tunneling mechanism.

ac Josephson effect and resonant Cooper pair tunneling emission of a single Cooper pair transistor.

PubMed

Billangeon, P-M; Pierre, F; Bouchiat, H; Deblock, R

2007-05-25

We measure the high-frequency emission of a single Cooper pair transistor (SCPT) in the regime where transport is only due to tunneling of Cooper pairs. This is achieved by coupling on chip the SCPT to a superconductor-insulator-superconductor junction and by measuring the photon assisted tunneling current of quasiparticles across the junction. This technique allows a direct detection of the ac Josephson effect of the SCPT and provides evidence of Landau-Zener transitions for proper gate voltage. The emission in the regime of resonant Cooper pair tunneling is also investigated. It is interpreted in terms of transitions between charge states coupled by the Josephson effect.

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Skierbiszewski, Czeslaw; Muziol, Grzegorz; Nowakowski-Szkudlarek, Krzesimir; Turski, Henryk; Siekacz, Marcin; Feduniewicz-Zmuda, Anna; Nowakowska-Szkudlarek, Anna; Sawicka, Marta; Perlin, Piotr

2018-03-01

We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm2 is below 10-4 Ω·cm2.

Resonant tunneling modulation in quasi-2D Cu2O/SnO2 p-n horizontal-multi-layer heterostructure for room temperature H2S sensor application

PubMed Central

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu2O/SnO2 p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu2O and SnO2 selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H2S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing. PMID:23409241

Resonant tunneling modulation in quasi-2D Cu(2)O/SnO(2) p-n horizontal-multi-layer heterostructure for room temperature H(2)S sensor application.

PubMed

Cui, Guangliang; Zhang, Mingzhe; Zou, Guangtian

2013-01-01

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu(2)O/SnO(2) p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu(2)O and SnO(2) selectively and periodically deposited according to their reduction potentials. The as-prepared heterostructure film displays excellent sensitivity to H(2)S at room temperature due to the resonant tunneling modulation. Furthermore, it is found that the laser illumination could enhance the gas response, and the mechanism with laser illumination is discussed. It is the first report on gas sensing application of resonant tunneling modulation. Hence, heterostructure material act as resonant tunneling system is believed to be an ideal candidate for further improvement of room temperature gas sensing.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Modification of the Tunneling Barrier in Polymer Light-Emitting Diodes Through Doping

NASA Astrophysics Data System (ADS)

Romero, Danilo

1996-03-01

Improvement in the performance of polymer light-emitting diodes (LEDs) is achieved upon light doping of the organic layer. The LEDs betrayed symmetrical electrical and light-emission characteristics. Their turn-on voltage is lower and their external quantum and power conversion efficiencies are higher by nearly an order of magnitude when compared with devices that utilized a nominally undoped organic layer. We attributed these results to the modification of the tunneling barrier in metal-polymer-metal junctions due to the presence of an induced polarization electric field associated with the ionized dopant counterions and charged polymer chains. Acknowledgement: I would like to thank my collaborators in this work: B. Cesar and B. François at the Institut Charles Sadron in Strasbourg, France and M. Schaer and especially Professor Libero Zuppiroli who has been the main driving force for the direction of the polymer LED project in Lausanne. I would like to acknowledge the financial support of the Optics Priority Program in Switzerland.

N-state random switching based on quantum tunnelling

NASA Astrophysics Data System (ADS)

Bernardo Gavito, Ramón; Jiménez Urbanos, Fernando; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J.; Woodhead, Christopher S.; Missous, Mohamed; Roedig, Utz; Young, Robert J.

2017-08-01

In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case. In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

Resonant tunneling of fluctuation Cooper pairs

DOE PAGES

Galda, Alexey; Mel'nikov, A. S.; Vinokur, V. M.

2015-02-09

Superconducting fluctuations have proved to be an irreplaceable source of information about microscopic and macroscopic material parameters that could be inferred from the experiment. According to common wisdom, the effect of thermodynamic fluctuations in the vicinity of the superconducting transition temperature, T c, is to round off all of the sharp corners and discontinuities, which otherwise would have been expected to occur at T c. Here we report the current spikes due to radiation-induced resonant tunneling of fluctuation Cooper pairs between two superconductors which grow even sharper and more pronounced upon approach to T c. This striking effect offers anmore » unprecedented tool for direct measurements of fluctuation Cooper pair lifetime, which is key to our understanding of the fluctuation regime, most notably to nature of the pseudogap state in high-temperature superconductors. Lastly, our finding marks a radical departure from the conventional view of superconducting fluctuations as a blurring and rounding phenomenon.« less

Numerical investigation on an array of Helmholtz resonators for the reduction of micro-pressure waves in modern and future high-speed rail tunnel systems

NASA Astrophysics Data System (ADS)

Tebbutt, J. A.; Vahdati, M.; Carolan, D.; Dear, J. P.

2017-07-01

Previous research has proposed that an array of Helmholtz resonators may be an effective method for suppressing the propagation of pressure and sound waves, generated by a high-speed train entering and moving in a tunnel. The array can be used to counteract environmental noise from tunnel portals and also the emergence of a shock wave in the tunnel. The implementation of an array of Helmholtz resonators in current and future high-speed train-tunnel systems is studied. Wave propagation in the tunnel is modelled using a quasi-one-dimensional formulation, accounting for non-linear effects, wall friction and the diffusivity of sound. A multi-objective genetic algorithm is then used to optimise the design of the array, subject to the geometric constraints of a demonstrative tunnel system and the incident wavefront in order to attenuate the propagation of pressure waves. It is shown that an array of Helmholtz resonators can be an effective countermeasure for various tunnel lengths. In addition, the array can be designed to function effectively over a wide operating envelope, ensuring it will still function effectively as train speeds increase into the future.

Resonant-tunneling oscillators and multipliers for submillimeter receivers

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. Gerhard

1988-01-01

Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Ultra-compact resonant tunneling-based TE-pass and TM-pass polarizers for SOI platform.

PubMed

Azzam, Shaimaa I; Obayya, Salah S A

2015-03-15

We investigate the polarization-dependent resonance tunneling effect in silicon waveguides to achieve ultra-compact and highly efficient polarization fitters for integrated silicon photonics, to the best of our knowledge for the first time. We hence propose simple structures for silicon-on-insulator transverse electric (TE)-pass and transverse magnetic (TM)-pass polarizers based on the resonance tunneling effect in silicon waveguides. The suggested TE-pass polarizer has insertion losses (IL), extinction ratio (ER), and return losses (RL) of 0.004 dB, 18 dB, and 24 dB, respectively; whereas, the TM-pass polarizer is characterized by IL, ER, and RL of 0.15 dB, 20 dB, and 23 dB, respectively. Both polarizers have an ultra-short device length of only 1.35 and 1.31 μm for the TE-pass and the TM-pass polarizers which are the shortest reported lengths to the best of our knowledge.

Development of III-Nitride Based THz Inter-Subband Lasers

DTIC Science & Technology

2009-09-30

tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III-Nitrides. Based on the...and tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III- Nitrides. Based...strain on bandstructure and piezo-as well as spontaneous- electric fields. Interband photoluminescence and intersubband absorption measurements were

Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

2018-01-01

Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10-5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

Ultra-compact channel drop filter based on photonic crystal nanobeam cavities utilizing a resonant tunneling effect.

PubMed

Ge, Xiaochen; Shi, Yaocheng; He, Sailing

2014-12-15

The design, fabrication, and characterization of a compact photonic crystal nanobeam drop filter based on the tunneling effect of the degenerate modes are presented. The degeneracy was achieved by tuning the coupling distance between the nanobeam and input/output waveguides. The tunneling effect of degenerate resonances with different symmetries has been verified experimentally. Channel drop filters with an extinction ratio larger than 10 dB and a quality factor of ∼5000 have been experimentally demonstrated.

Nonequilibrium steady states and resonant tunneling in time-periodically driven systems with interactions

NASA Astrophysics Data System (ADS)

Qin, Tao; Hofstetter, Walter

2018-03-01

Time-periodically driven systems are a versatile toolbox for realizing interesting effective Hamiltonians. Heating, caused by excitations to high-energy states, is a challenge for experiments. While most setups so far address the relatively weakly interacting regime, it is of general interest to study heating in strongly correlated systems. Using Floquet dynamical mean-field theory, we study nonequilibrium steady states (NESS) in the Falicov-Kimball model, with time-periodically driven kinetic energy or interaction. We systematically investigate the nonequilibrium properties of the NESS. For a driven kinetic energy, we show that resonant tunneling, where the interaction is an integer multiple of the driving frequency, plays an important role in the heating. In the strongly correlated regime, we show that this can be well understood using Fermi's golden rule and the Schrieffer-Wolff transformation for a time-periodically driven system. We furthermore demonstrate that resonant tunneling can be used to control the population of Floquet states to achieve "photodoping." For driven interactions introduced by an oscillating magnetic field near a widely adopted Feshbach resonance, we find that the double occupancy is strongly modulated. Our calculations apply to shaken ultracold-atom systems and to solid-state systems in a spatially uniform but time-dependent electric field. They are also closely related to lattice modulation spectroscopy. Our calculations are helpful to understand the latest experiments on strongly correlated Floquet systems.

Transport and recombination in organic light-emitting diodes studied by electrically detected magnetic resonance.

PubMed

Graeff, C F O; Silva, G B; Nüesch, F; Zuppiroli, L

2005-09-01

We have used electrically detected magnetic resonance (EDMR) to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline (Alq3). These devices were designed to identify the microscopic origin of different spin-dependent processes, i.e. hopping and exciton formation. The EDMR signal in organic light-emitting diodes (OLEDs) based on Alq3 is only observed when the device is electroluminescent and is assigned to spin-dependent exciton formation. It can be decomposed in at least two Gaussians: one with peak-to-peak line (deltaH(PP)) of 1.6 mT and another with deltaH(PP) of 2.0 to 3.4 mT, depending on bias and temperature. The g-factors of the two components are barely distinguishable and close to 2.003. The broad line is attributed to the resonance in Alq3 anions, while the other line is attributed to cationic states. These attributions are supported by line shape and its electrical-field dependence of unipolar Alq3-based diodes, where hopping process related to dication and dianion formation is observed. In these unipolar devices, it is shown that the signal coming from spin-dependent hopping occurs close to organic semiconductor/metal interfaces. The sign of the magnetic-resonance-induced conductivity change is dominated by charge injection rather than charge mobility. Our results indicate that the probability of singlet exciton formation in our OLEDs is smaller than 25%.

Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

NASA Astrophysics Data System (ADS)

Nam, Bu-il; Park, Jong Seo; Lim, Keon-Hee; Ahn, Yong-keon; Lee, Jinwon; Park, Jun-woo; Cho, Nam-Kwang; Lee, Donggun; Lee, Han-Bo-Ram; Kim, Youn Sang

2017-07-01

An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Martin, D.; Grandjean, N.

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device ismore » 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.« less

Resonance tunneling electron-vibrational spectroscopy of polyoxometalates.

PubMed

Dalidchik, F I; Kovalevskii, S A; Balashov, E M

2017-05-21

The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier-Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters-energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level.

Resonance tunneling electron-vibrational spectroscopy of polyoxometalates

PubMed Central

Dalidchik, F. I.; Kovalevskii, S. A.

2017-01-01

The tunneling spectra of the ordered monolayer films of decamolybdodicobaltate (DMDC) compounds deposited from aqueous solutions on HOPG were measured by scanning tunnel microscopy in air. The DMDC spectra, as well as the tunneling spectra of other polyoxometalates (POMs), exhibit well-defined negative differential resistances (NDRs). The mechanism of formation of these spectral features was established from the collection of revealed NDR dependences on the external varying parameters and found to be common to all systems exhibiting Wannier–Stark localization. A model of biresonance tunneling was developed to provide an explanation for the totality of experimental data, both the literature and original, on the tunneling POM probing. A variant of the tunneling electron-vibrational POM spectroscopy was proposed allowing the determination of the three basic energy parameters—energy gaps between the occupied and unoccupied states, frequencies of the vibrational transitions accompanying biresonance electron-tunneling processes, and electron-vibrational interaction constants on the monomolecular level. PMID:28527451

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Characterization of zero-bias microwave diode power detectors at cryogenic temperature.

PubMed

Giordano, Vincent; Fluhr, Christophe; Dubois, Benoît; Rubiola, Enrico

2016-08-01

We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes is measured as functions of the applied microwave power. We highlight strong variations of the diode characteristics when the applied microwave power is higher than a few microwatts. For a diode operating at 4 K, the differential gain increases from 1000 V/W to about 4500 V/W when the power passes from -30 dBm to -20 dBm. The diode white noise floor is equivalent to a Noise Equivalent Power of 0.8 pW/Hz and 8 pW/Hz at 4 K and 300 K, respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density Sα(1 Hz) = - 120 dB/Hz at 4 K. Flicker noise is 10 dB higher at room temperature.

Design of miniaturized silicon wire and slot waveguide polarization splitterbased on a resonant tunneling.

PubMed

Komatsu, Masa-Aki; Saitoh, Kunimasa; Koshiba, Masanori

2009-10-12

We propose an ultra-small polarization splitter based on a resonant tunneling phenomenon. This polarization splitter consists of two identical horizontally oblong silicon wire waveguides separated by a vertical slot waveguide. The structural parameters of the central resonant slot waveguide are designed to couple only the TM-like mode between the left and right side silicon wire waveguides. Results from numerical simulation with the full-vectorial beam propagation method show that a 16-mum-long polarization splitter with extinction ratio better than -20 dB on the entire C-band is achieved.

External synchronization of oscillating pulse edge on a transmission line with regularly spaced tunnel diodes.

PubMed

Narahara, Koichi; Misono, Masatoshi; Miyakawa, Kenji

2013-01-01

We investigate the external synchronization of the oscillating pulse edges developed in a transmission line periodically loaded with tunnel diodes (TDs), termed a TD line. It is observed that the pulse edge oscillates on a TD line when supplied by an appropriate voltage at the end of the line. We discuss how the pulse edge oscillates on a TD line and the properties of the external synchronization of the edge oscillation driven by a sinusoidal perturbation. By applying a phase-reduction scheme to the transmission equation of a TD line, we obtain the phase sensitivity, which satisfactory explains the measured spatial dependence of the locking range on the frequency. Moreover, we successfully detect the spatiotemporal behaviors of the edge oscillation by establishing synchronization with the sampling trigger of an oscilloscope.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Resonant-enhanced spectroscopy of molecular rotations with a scanning tunneling microscope.

PubMed

Natterer, Fabian Donat; Patthey, François; Brune, Harald

2014-07-22

We use rotational excitation spectroscopy with a scanning tunneling microscope to investigate the rotational properties of molecular hydrogen and its isotopes physisorbed on the surfaces of graphene and hexagonal boron nitride (h-BN), grown on Ni(111), Ru(0001), and Rh(111). The rotational excitation energies are in good agreement with ΔJ = 2 transitions of freely spinning p-H2 and o-D2 molecules. The variations of the spectral line shapes for H2 among the different surfaces can be traced back to a molecular resonance-mediated tunneling mechanism. Our data for H2/h-BN/Rh(111) suggest a local intrinsic gating on this surface due to lateral static dipoles. Spectra on a mixed monolayer of H2, HD, and D2 display all three J = 0 → 2 rotational transitions, irrespective of tip position, thus pointing to a multimolecule excitation, or molecular mobility in the physisorbed close-packed layer.

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Magnetic field enhanced resonant tunneling in a silicon nanowire single-electron-transistor.

PubMed

Aravind, K; Lin, M C; Ho, I L; Wu, C S; Kuo, Watson; Kuan, C H; Chang-Liao, K S; Chen, C D

2012-03-01

We report fabrication, measurement and simulation of silicon single-electron-transistors made on silicon-on-insulator wafers. At T-2 K, these devices showed clear Coulomb blockade structures. An external perpendicular magnetic field was found to enhance the resonant tunneling peak and was used to predict the presence of two laterally coupled quantum dots in the narrow constriction between the source-drain electrodes. The proposed model and measured experimental data were consistently explained using numerical simulations.

Enhancement and inhibition of light tunneling mediated by resonant mode conversion.

PubMed

Kartashov, Yaroslav V; Vysloukh, Victor A; Torner, Lluis

2014-02-15

We show that the rate at which light tunnels between neighboring multimode waveguides can be drastically increased or reduced by the presence of small longitudinal periodic modulations of the waveguide properties that stimulate resonant conversion between the eigenmodes of each waveguide. Such a conversion, available only in multimode guiding structures, leads to periodic power transfer into higher-order modes, whose tails may considerably overlap with neighboring waveguides. As a result, the effective coupling constant for neighboring waveguides may change by several orders of magnitude upon small variations in the longitudinal modulation parameters.

Dynamic analysis of a fibre-optic ring resonator excited by a sinewave-modulated laser diode

NASA Astrophysics Data System (ADS)

Pandian, G. Soundra; Seraji, Faramarz

1990-10-01

The present theoretical dynamic analysis of a fiber-optic ring resonator upon excitation by a sinusoidally-modulated laser diode (LD) yields results for such resonator conditions as modulating frequency, amplitude-modulation index, coupler power-coupling coefficient, loop-delay time (tau), and the phase angle between the LD's AM and FM responses. It is found that when the modulation frequency f(m) exceeds a threshold value such that f(m)tau exceeds 0.0002, the output response diverges from steady state and engages in an oscillatory behavior characterized by overshoots. When f(m)tau exceeds 1.0, the output approximates the intensity modulation of the LD.

Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene

NASA Astrophysics Data System (ADS)

Saffarzadeh, Alireza; Kirczenow, George

2012-06-01

Based on the standard tight-binding model of the graphene π-band electronic structure, the extended Hückel model for the adsorbate and graphene carbon atoms, and spin splittings estimated from density functional theory (DFT), the Dirac point resonances due to a single cobalt atom on graphene are studied. The relaxed geometry of the magnetic adsorbate and the graphene is calculated using DFT. The system shows strong spin polarization in the vicinity of the graphene Dirac point energy for all values of the gate voltage, due to the spin splitting of Co 3d orbitals. We also model the differential conductance spectra for this system that have been measured in the scanning tunneling microscopy (STM) experiments of Brar [Nat. Phys.1745-247310.1038/nphys1807 7, 43 (2011)]. We interpret the experimentally observed behavior of the S-peak in the STM differential conductance spectrum as evidence of tunneling between the STM tip and a cobalt-induced Dirac point resonant state of the graphene, via a Co 3d orbital. The cobalt ionization state which is determined by the energy position of the resonance can be tuned by gate voltage, similar to that seen in the experiment.

InP tunnel junctions for InP/InGaAs tandem solar cells

NASA Technical Reports Server (NTRS)

Vilela, Mauro F.; Freundlich, Alex; Renaud, P.; Medelci, N.; Bensaoula, A.

1996-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 A/cm and maximum specific resistivities (Vp/Ip - peak voltage to peak current ratio) in the range of 10(exp -4)Omega cm(exp 2) is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

InP Tunnel Junctions for InP/InGaAs Tandem Solar Cells

NASA Technical Reports Server (NTRS)

Vilela, M. F.; Medelci, N.; Bensaoula, A.; Freundlich, A.; Renaud, P.

1995-01-01

We report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, John F.; Zolper, John C.

1997-01-01

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Semiconductor tunnel junction with enhancement layer

DOEpatents

Klem, J.F.; Zolper, J.C.

1997-10-21

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling. 5 figs.

Spectroscopic measurement of spin-dependent resonant tunneling through a 3D disorder: the case of MnAs/GaAs/MnAs junctions.

PubMed

Garcia, V; Jaffrès, H; George, J-M; Marangolo, M; Eddrief, M; Etgens, V H

2006-12-15

We propose an analytical model of spin-dependent resonant tunneling through a 3D assembly of localized states (spread out in energy and in space) in a barrier. An inhomogeneous distribution of localized states leads to resonant tunneling magnetoresistance inversion and asymmetric bias dependence as evidenced with a set of experiments with MnAs/GaAs(7-10 nm)/MnAs tunnel junctions. One of the key parameters of our theory is a dimensionless critical exponent beta scaling the typical extension of the localized states over the characteristic length scale of the spatial distribution function. Furthermore, we demonstrate, through experiments with localized states introduced preferentially in the middle of the barrier, the influence of an homogeneous distribution on the spin-dependent transport properties.

Controlling resonant tunneling in graphene via Fermi velocity engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lima, Jonas R. F., E-mail: jonas.lima@ufrpe.br; Pereira, Luiz Felipe C.; Bezerra, C. G.

We investigate the resonant tunneling in a single layer graphene superlattice with modulated energy gap and Fermi velocity via an effective Dirac-like Hamiltonian. We calculate the transmission coefficient with the transfer matrix method and analyze the effect of a Fermi velocity modulation on the electronic transmission, in the case of normal and oblique incidence. We find it is possible to manipulate the electronic transmission in graphene by Fermi velocity engineering, and show that it is possible to tune the transmitivity from 0 to 1. We also analyze how a Fermi velocity modulation influences the total conductance and the Fano factor.more » Our results are relevant for the development of novel graphene-based electronic devices.« less

Nonlinearity, resonance, charging, and motion at the atomic scale studied with scanning tunneling microscopes

NASA Astrophysics Data System (ADS)

Tu, Xiuwen

2008-10-01

Several novel phenomena at the single-atom and single-molecule level occurring on the surfaces of single crystals were studied with home-built low temperature scanning tunneling microscopes. The results revealed intriguing properties of single atoms and single molecules, including nonlinearity, resonance, charging, and motion. First, negative differential resistance (NDR) was observed in the dI/dV spectra for single copper-phthalocyanine (CuPc) molecules adsorbed on one- and two-layer sodium bromide (NaBr), but not for single CuPc molecules adsorbed on three-layer NaBr, all grown on a NiAl(110) surface. This transition from NDR to the absence of NDR was explained as the result of competing effects in the double-barrier tunnel junction (DBTJ) and was reproduced in a calculation based on a resonant-tunneling model. Second, the nonlinearity of the STM junction due to a single manganese (Mn) atom or MnCO molecule adsorbed on a NiAl(110) surface was used to rectify microwave irradiation. The resulting rectification current was shown to be sensitive to the spin-splitting of the electronic states of the Mn atom and to the vibrations of the MnCO molecule. Next, the ordering of cesium (Cs) atoms adsorbed on a Au(111) surface and a NiAl(110) surface was imaged in real space. Because of charge transfer to the substrates, Cs adatoms were positively charged on both surfaces. Even at 12 K, Cs adatoms were able to move and adjust according to coverage. On Au(111), the Cs first layer had a quasi-hexagonal lattice and islands of the second Cs layer did not appear until the first was completed. On NiAl(110), a locally disordered Cs first layer was observed before a locally ordered layer appeared at higher coverages. The cation-pi interactions were then studied at the single molecular level. We were able to form cation-pi complexes such as Cs···DSB, Cs···DSB···Cs, Rb···DSB, and Rb···ZnEtiol controllably by manipulation with the STM tip. We could also separate these

Regenerative memory in time-delayed neuromorphic photonic resonators

NASA Astrophysics Data System (ADS)

Romeira, B.; Avó, R.; Figueiredo, José M. L.; Barland, S.; Javaloyes, J.

2016-01-01

We investigate a photonic regenerative memory based upon a neuromorphic oscillator with a delayed self-feedback (autaptic) connection. We disclose the existence of a unique temporal response characteristic of localized structures enabling an ideal support for bits in an optical buffer memory for storage and reshaping of data information. We link our experimental implementation, based upon a nanoscale nonlinear resonant tunneling diode driving a laser, to the paradigm of neuronal activity, the FitzHugh-Nagumo model with delayed feedback. This proof-of-concept photonic regenerative memory might constitute a building block for a new class of neuron-inspired photonic memories that can handle high bit-rate optical signals.

Scanning tunneling microscopy, orbital-mediated tunneling spectroscopy, and ultraviolet photoelectron spectroscopy of metal(II) tetraphenylporphyrins deposited from vapor.

PubMed

Scudiero, L; Barlow, D E; Mazur, U; Hipps, K W

2001-05-02

Thin films of vapor-deposited Ni(II) and Co(II) complexes of tetraphenylporphyrin (NiTPP and CoTPP) were studied supported on gold and embedded in Al-Al(2)O(3)-MTPP-Pb tunnel diodes, where M = Ni or Co. Thin films deposited onto polycrystalline gold were analyzed by ultraviolet photoelectron spectroscopy (UPS) using He I radiation. Scanning tunneling microscopy (STM) and orbital-mediated tunneling spectroscopy (STM-OMTS) were performed on submonolayer films of CoTPP and NiTPP supported on Au(111). Inelastic electron tunneling spectroscopy (IETS) and OMTS were measured in conventional tunnel diode structures. The highest occupied pi molecular orbital of the porphyrin ring was seen in both STM-OMTS and UPS at about 6.4 eV below the vacuum level. The lowest unoccupied pi molecular orbital of the porphyrin ring was observed by STM-OMTS and by IETS-OMTS to be located near 3.4 eV below the vacuum level. The OMTS spectra of CoTPP had a band near 5.2 eV (below the vacuum level) that was attributed to transient oxidation of the central Co(II) ion. That is, it is due to electron OMT via the half-filled d(z)(2) orbital present in Co(II) of CoTPP. The NiTPP OMTS spectra show no such band, consistent with the known difficulty of oxidation of the Ni(II) ion. The STM-based OMTS allowed these two porphyrin complexes to be easily distinguished. The present work is the first report of the observation of STM-OMTS, tunnel junction OMTS, and UPS of the same compounds. Scanning tunneling microscope-based orbital-mediated tunneling provides more information than UPS or tunnel junction-based OMTS and does so with molecular-scale resolution.

Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2 heterojunctions

NASA Astrophysics Data System (ADS)

Kuroda, Tatsuya; Mori, Nobuya

2018-04-01

The band-to-band (BTB) tunneling current J through in-plane MoS2/WS2 heterojunctions is calculated by the nonequilibrium Green function method combined with tight-binding approximation. Types A and B of band configurations are considered. For type-A (type-B) heterojunctions, a potential notch exists (or is absent) at the heterointerface. Both type-A and type-B MoS2/WS2 heterojunctions can support a higher BTB current than MoS2 and WS2 homojunctions. For type-A heterojunctions, the resonant enhancement of J occurs resulting in a significantly higher BTB tunneling current.

Passive Optical Locking Techniques for Diode Lasers

NASA Astrophysics Data System (ADS)

Zhang, Quan

1995-01-01

Most current diode-based nonlinear frequency converters utilize electronic frequency locking techniques. However, this type of locking technique typically involves very complex electronics, and suffers the 'power-drop' problem. This dissertation is devoted to the development of an all-optical passive locking technique that locks the diode laser frequency to the external cavity resonance stably without using any kind of electronic servo. The amplitude noise problem associated with the strong optical locking has been studied. Single-mode operation of a passively locked single-stripe diode with an amplitude stability better than 1% has been achieved. This passive optical locking technique applies to broad-area diodes as well as single-stripe diodes, and can be easily used to generate blue light. A schematic of a milliwatt level blue laser based on the single-stripe diode locking technique has been proposed. A 120 mW 467 nm blue laser has been built using the tapered amplifier locking technique. In addition to diode-based blue lasers, this passive locking technique has applications in nonlinear frequency conversions, resonant spectroscopy, particle counter devices, telecommunications, and medical devices.

Selective p-i-n photodetector with resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mil'shtein, S.; Wilson, S.; Pillai, A.

2014-05-15

There are different fundamental approaches to designing selective photodetectors, where the selectivity of optical spectra is produced by a filtering aperture. However, manufacturing of multilayered filters is cumbersome for epitaxial technology. In the current study, we offer a novel approach in design of selective photodetectors. A p-i-n photodetector with superlattices in top n-layer becomes transparent for photons where hν<>E{sub ng}+E{sub n1}, the light will be absorbed, simultaneously producing high energy (hot) electrons. The designed thickness of the structure does prevent thermal relaxation of high energy electrons by thus enhancing the selectivity of the photodetector. However the most important selectivity elementmore » is the resonant tunneling which does happen only for electrons occupying E{sub n1} energy levels as they transfer to levels E{sub i1}aligned under reverse biasing.« less

Tunneling induced absorption with competing Nonlinearities

PubMed Central

Peng, Yandong; Yang, Aihong; Xu, Yan; Wang, Peng; Yu, Yang; Guo, Hongju; Ren, Tingqi

2016-01-01

We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption peak to a sublinewidth level. Analytical expressions show that the enhanced nonlinear absorption is largely due to the fifth-order nonlinear term. Competition between third- and fifth-order nonlinearities leads to an anomalous dispersion of the total susceptibility. PMID:27958303

Tunneling induced absorption with competing Nonlinearities.

PubMed

Peng, Yandong; Yang, Aihong; Xu, Yan; Wang, Peng; Yu, Yang; Guo, Hongju; Ren, Tingqi

2016-12-13

We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption peak to a sublinewidth level. Analytical expressions show that the enhanced nonlinear absorption is largely due to the fifth-order nonlinear term. Competition between third- and fifth-order nonlinearities leads to an anomalous dispersion of the total susceptibility.

High-frequency response and the possibilities of frequency-tunable narrow-band terahertz amplification in resonant tunneling nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kapaev, V. V., E-mail: kapaev@sci.lebedev.ru; Kopaev, Yu. V.; Savinov, S. A.

2013-03-15

The characteristics of the high-frequency response of single- and double-well resonant tunneling structures in a dc electric field are investigated on the basis of the numerical solution of a time-dependent Schroedinger equation with open boundary conditions. The frequency dependence of the real part of high frequency conductivity (high-frequency response) in In{sub 0.53}Ga{sub 0.47}As/AlAs/InP structures is analyzed in detail for various values of the dc voltage V{sub dc} in the negative differential resistance (NDR) region. It is shown that double-well three-barrier structures are promising for the design of terahertz-band oscillators. The presence of two resonant states with close energies in suchmore » structures leads to a resonant (in frequency) response whose frequency is determined by the energy difference between these levels and can be controlled by varying the parameters of the structure. It is shown that, in principle, such structures admit narrow-band amplification, tuning of the amplification frequency, and a fine control of the amplification (oscillation) frequency in a wide range of terahertz frequencies by varying a dc electric voltage applied to the structure. Starting from a certain width of the central intermediate barrier in double-well structures, one can observe a collapse of resonances, where the structure behaves like a single-well system. This phenomenon imposes a lower limit on the oscillation frequency in three-barrier resonant tunneling structures.« less

Wavelength-Agile External-Cavity Diode Laser for DWDM

NASA Technical Reports Server (NTRS)

Pilgrim, Jeffrey S.; Bomse, David S.

2006-01-01

A prototype external-cavity diode laser (ECDL) has been developed for communication systems utilizing dense wavelength- division multiplexing (DWDM). This ECDL is an updated version of the ECDL reported in Wavelength-Agile External- Cavity Diode Laser (LEW-17090), NASA Tech Briefs, Vol. 25, No. 11 (November 2001), page 14a. To recapitulate: The wavelength-agile ECDL combines the stability of an external-cavity laser with the wavelength agility of a diode laser. Wavelength is modulated by modulating the injection current of the diode-laser gain element. The external cavity is a Littman-Metcalf resonator, in which the zeroth-order output from a diffraction grating is used as the laser output and the first-order-diffracted light is retro-reflected by a cavity feedback mirror, which establishes one end of the resonator. The other end of the resonator is the output surface of a Fabry-Perot resonator that constitutes the diode-laser gain element. Wavelength is selected by choosing the angle of the diffracted return beam, as determined by position of the feedback mirror. The present wavelength-agile ECDL is distinguished by design details that enable coverage of all 60 channels, separated by 100-GHz frequency intervals, that are specified in DWDM standards.

[Evaluation of motor and sensory neuroconduction of the median nerve in patients with carpal tunnel syndrome treated with non-coherent light emitted by gallium arsenic diodes].

PubMed

Viera Alemán, C; Purón, E; Hamilton, M L; Santos Anzorandia, C; Navarro, A; Pineda Ortiz, I

The treatment selection in the carpal tunnel syndrome according to the damage of the median nerve is important and all of these have adverse effects. A good alternative without undesired reactions is irradiation of the carpal tunnel with not coherent light between 920 and 940 nm emitted by gallium arsenide diodes, resembling the physic and therapeutic laser effects. Twenty-six female patients with idiopathic middle carpal tunnel syndrome were irradiated 15 minutes daily during three weeks. The median nerve motor and sensitive neuroconduction was studied before and immediately after the treatment. The abnormal neuroconduction variables (latency, amplitude and velocity conduction) did not modify when treatment concluded, in spite of all the patients reported disappearance of pain and numbness in damaged hands. Not coherent light does not change the fibers functional state explored by conventional neuroconductions techniques. It remains to know if this light produces fine fibers improvement.

Monte Carlo modelling of Schottky diode for rectenna simulation

NASA Astrophysics Data System (ADS)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Dielectric Sensors Based on Electromagnetic Energy Tunneling

PubMed Central

Siddiqui, Omar; Kashanianfard, Mani; Ramahi, Omar

2015-01-01

We show that metallic wires embedded in narrow waveguide bends and channels demonstrate resonance behavior at specific frequencies. The electromagnetic energy at these resonances tunnels through the narrow waveguide channels with almost no propagation losses. Under the tunneling behavior, high-intensity electromagnetic fields are produced in the vicinity of the metallic wires. These intense field resonances can be exploited to build highly sensitive dielectric sensors. The sensor operation is explained with the help of full-wave simulations. A practical setup consisting of a 3D waveguide bend is presented to experimentally observe the tunneling phenomenon. The tunneling frequency is predicted by determining the input impedance minima through a variational formula based on the Green function of a probe-excited parallel plate waveguide. PMID:25835188

Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2.

PubMed

Nguyen, Linh-Nam; Lan, Yann-Wen; Chen, Jyun-Hong; Chang, Tay-Rong; Zhong, Yuan-Liang; Jeng, Horng-Tay; Li, Lain-Jong; Chen, Chii-Dong

2014-05-14

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect-transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

Silicon-Based Quantum MOS Technology Development

DTIC Science & Technology

2000-03-07

resonant interband tunnel diodes were demonstrated with peak current density greater than 104 A/cm2; peak-to-valley current ratio exceeding 2 was...photon emission reduce the peak-to-valley current ratio and device performance. Therefore, interband tunnel devices should be more resilient to...Comparison of bipolar interband tunnel and optical devices: (a) Esaki diode biased into the valley current region and (b) optical light emitter. The Esaki

Tunneling effect on double potential barriers GaAs and PbS

NASA Astrophysics Data System (ADS)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

Resonant tunneling of 1-dimensional electrons across an array of 3-dimensionally confined potential wells

NASA Astrophysics Data System (ADS)

Allee, D. R.; Chou, S. Y.; Harris, J. S.; Pease, R. F. W.

A lateral resonant tunneling field effect transistor has been fabricated with a gate electrode in the form of a railway such that the two rails form a lateral double barrier potential at the GaAs/AlGaAs interface. The ties confine the electrons in the third dimension forming an array of potential boxes or three dimensionally confined potential wells. The width of the ties and rails is 50nm; the spacings between the ties and between the two rails are 230nm and 150nm respectively. The ties are 750nm long and extend beyond the the two rails forming one dimensional wires on either side. Conductance oscillations are observed in the drain current at 4.2K as the gate voltage is scanned. Comparison with devices with a solid gate, and with a monorail gate with ties fabricated on the same wafer suggest that these conductance oscillations are electron resonant tunneling from one dimensional wires through the quasi-bound states of the three dimensionally confined potential wells. Comparison with a device with a two rail gate without ties (previously published) indicates that additional confinement due to the ties enhances the strength of the conductance oscillations.

Anomalous tensoelectric effects in gallium arsenide tunnel diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.

Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

Controlled modification of resonant tunneling in metal-insulator-insulator-metal structures

NASA Astrophysics Data System (ADS)

Mitrovic, I. Z.; Weerakkody, A. D.; Sedghi, N.; Ralph, J. F.; Hall, S.; Dhanak, V. R.; Luo, Z.; Beeby, S.

2018-01-01

We present comprehensive experimental and theoretical work on tunnel-barrier rectifiers comprising bilayer (Nb2O5/Al2O3) insulator configurations with similar (Nb/Nb) and dissimilar (Nb/Ag) metal electrodes. The electron affinity, valence band offset, and metal work function were ascertained by X-ray photoelectron spectroscopy, variable angle spectroscopic ellipsometry, and electrical measurements on fabricated reference structures. The experimental band line-up parameters were fed into a theoretical model to predict available bound states in the Nb2O5/Al2O3 quantum well and generate tunneling probability and transmittance curves under applied bias. The onset of strong resonance in the sub-V regime was found to be controlled by a work function difference of Nb/Ag electrodes in agreement with the experimental band alignment and theoretical model. A superior low-bias asymmetry of 35 at 0.1 V and a responsivity of 5 A/W at 0.25 V were observed for the Nb/4 nm Nb2O5/1 nm Al2O3/Ag structure, sufficient to achieve a rectification of over 90% of the input alternate current terahertz signal in a rectenna device.

On the basically single-type excitation source of resonance in the wind tunnel and in the hydroturbine channel of a hydraulic power plant

NASA Astrophysics Data System (ADS)

Karavosov, R. K.; Prozorov, A. G.

2012-01-01

We have investigated the spectra of pressure pulsations in the near field of the open working section of the wind tunnel with a vortex flow behind the tunnel blower formed like the flow behind the hydroturbine of a hydraulic power plant. We have made a comparison between the measurement data for pressure pulsations and the air stream velocity in tunnels of the above type and in tunnels in which a large-scale vortex structure behind the blower is not formed. It has been established that the large-scale vortex formation in the incompressible medium behind the blade system in the wind tunnel is a source of narrow-band acoustic radiation capable of exciting resonance self-oscillations in the tunnel channel.

Integrated resonant tunneling diode based antenna

DOEpatents

Hietala, Vincent M.; Tiggers, Chris P.; Plut, Thomas A.

2000-01-01

An antenna comprising a plurality of negative resistance devices and a method for making same comprising employing a removable standoff layer to form the gap between the microstrip antenna metal and the bottom contact layer.

Magnetic Resonance Imaging Currently Fails to Fully Evaluate the Biceps-Labrum Complex and Bicipital Tunnel.

PubMed

Taylor, Samuel A; Newman, Ashley M; Nguyen, Joseph; Fabricant, Peter D; Baret, Nikolas J; Shorey, Mary; Ramkumar, Prem; O'Brien, Stephen J

2016-02-01

To determine the diagnostic accuracy of magnetic resonance imaging (MRI) for biceps-labrum complex (BLC) lesions, including the extra-articular bicipital tunnel. A retrospective review of 277 shoulders with chronic refractory BLC symptoms that underwent arthroscopic subdeltoid transfer of the long head of the biceps tendon (LHBT) to the conjoint tendon was conducted. Intraoperative lesions were categorized as "inside" (labral tears and dynamic LHBT incarceration), "junctional" (LHBT partial tears, LHBT subluxation, and biceps chondromalacia), or "bicipital tunnel" (extra-articular bicipital tunnel scar/stenosis, loose bodies, LHBT instability, and LHBT partial tears) based on anatomic location. Attending radiologist-generated MRI reports were graded dichotomously as positive or negative for biceps and labral damage and then compared with intraoperative findings. Sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV) were calculated for MRI with respect to intraoperative findings. With regard to inside lesions, MRI had an overall sensitivity, specificity, PPV, and NPV for labrum lesions of 77.3%, 68.2%, 57.3%, and 84.5% respectively. The sensitivity, specificity, PPV, and NPV of MRI for junctional lesions were 43.3%, 55.6%, 73.1%, and 26.0%, respectively. For the bicipital tunnel, MRI had a sensitivity, specificity, PPV, and NPV of 50.4%, 61.4%, 48.7%, and 63.0%, respectively. MRI was unreliable for ruling out BLC lesions among chronically symptomatic patients, including when the bicipital tunnel was affected. Copyright © 2016 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Spin bottleneck in resonant tunneling through double quantum dots with different Zeeman splittings.

PubMed

Huang, S M; Tokura, Y; Akimoto, H; Kono, K; Lin, J J; Tarucha, S; Ono, K

2010-04-02

We investigated the electron transport property of the InGaAs/GaAs double quantum dots, the electron g factors of which are different from each other. We found that in a magnetic field, the resonant tunneling is suppressed even if one of the Zeeman sublevels is aligned. This is because the other misaligned Zeeman sublevels limit the total current. A finite broadening of the misaligned sublevel partially relieves this bottleneck effect, and the maximum current is reached when interdot detuning is half the Zeeman energy difference.

Resonant photon tunneling via surface plasmon polaritons through one-dimensional metal-dielectric metamaterials.

PubMed

Tomita, Satoshi; Yokoyama, Takashi; Yanagi, Hisao; Wood, Ben; Pendry, John B; Fujii, Minoru; Hayashi, Shinji

2008-06-23

We report resonant photon tunneling (RPT) through one-dimensional metamaterials consisting of alternating layers of metal and dielectric. RPT via a surface plasmon polariton state permits evanescent light waves with large wavenumbers to be conveyed through the metamaterial. This is the mechanism for sub-wavelength imaging recently demonstrated with a super-lens. Furthermore, we find that the RPT peak is shifted from the reflectance dip with increasing the number of Al layers, indicating that the shift is caused by the losses in the RPT.

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

PubMed Central

Ambrosio, Antonio; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

Summary A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube–silicon (CNT–Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise. PMID:25821710

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

PubMed

Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Metal-Insulator-Semiconductor Diode Consisting of Two-Dimensional Nanomaterials.

PubMed

Jeong, Hyun; Oh, Hye Min; Bang, Seungho; Jeong, Hyeon Jun; An, Sung-Jin; Han, Gang Hee; Kim, Hyun; Yun, Seok Joon; Kim, Ki Kang; Park, Jin Cheol; Lee, Young Hee; Lerondel, Gilles; Jeong, Mun Seok

2016-03-09

We present a novel metal-insulator-semiconductor (MIS) diode consisting of graphene, hexagonal BN, and monolayer MoS2 for application in ultrathin nanoelectronics. The MIS heterojunction structure was fabricated by vertically stacking layered materials using a simple wet chemical transfer method. The stacking of each layer was confirmed by confocal scanning Raman spectroscopy and device performance was evaluated using current versus voltage (I-V) and photocurrent measurements. We clearly observed better current rectification and much higher current flow in the MIS diode than in the p-n junction and the metal-semiconductor diodes made of layered materials. The I-V characteristic curve of the MIS diode indicates that current flows mainly across interfaces as a result of carrier tunneling. Moreover, we observed considerably high photocurrent from the MIS diode under visible light illumination.

Efficient Carrier-to-Exciton Conversion in Field Emission Tunnel Diodes Based on MIS-Type van der Waals Heterostack.

PubMed

Wang, Shunfeng; Wang, Junyong; Zhao, Weijie; Giustiniano, Francesco; Chu, Leiqiang; Verzhbitskiy, Ivan; Zhou Yong, Justin; Eda, Goki

2017-08-09

We report on efficient carrier-to-exciton conversion and planar electroluminescence from tunnel diodes based on a metal-insulator-semiconductor (MIS) van der Waals heterostack consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS 2 ). These devices exhibit excitonic electroluminescence with extremely low threshold current density of a few pA·μm -2 , which is several orders of magnitude lower compared to the previously reported values for the best planar EL devices. Using a reference dye, we estimate the EL quantum efficiency to be ∼1% at low current density limit, which is of the same order of magnitude as photoluminescence quantum yield at the equivalent excitation rate. Our observations reveal that the efficiency of our devices is not limited by carrier-to-exciton conversion efficiency but by the inherent exciton-to-photon yield of the material. The device characteristics indicate that the light emission is triggered by injection of hot minority carriers (holes) to n-doped WS 2 by Fowler-Nordheim tunneling and that hBN serves as an efficient hole-transport and electron-blocking layer. Our findings offer insight into the intelligent design of van der Waals heterostructures and avenues for realizing efficient excitonic devices.

Franck-Condon fingerprinting of vibration-tunneling spectra.

PubMed

Berrios, Eduardo; Sundaradevan, Praveen; Gruebele, Martin

2013-08-15

We introduce Franck-Condon fingerprinting as a method for assigning complex vibration-tunneling spectra. The B̃ state of thiophosgene (SCCl2) serves as our prototype. Despite several attempts, assignment of its excitation spectrum has proved difficult because of near-degenerate vibrational frequencies, Fermi resonance between the C-Cl stretching mode and the Cl-C-Cl bending mode, and large tunneling splittings due to the out-of-plane umbrella mode. Hence, the spectrum has never been fitted to an effective Hamiltonian. Our assignment approach replaces precise frequency information with intensity information, eliminating the need for double resonance spectroscopy or combination differences, neither of which have yielded a full assignment thus far. The dispersed fluorescence spectrum of each unknown vibration-tunneling state images its character onto known vibrational progressions in the ground state. By using this Franck-Condon fingerprint, we were able to determine the predominant character of several vibration-tunneling states and assign them; in other cases, the fingerprinting revealed that the states are strongly mixed and cannot be characterized with a simple normal mode assignment. The assigned transitions from vibration-tunneling wave functions that were not too strongly mixed could be fitted within measurement uncertainty by an effective vibration-tunneling Hamiltonian. A fit of all observed vibration-tunneling states will require a full resonance-tunneling Hamiltonian.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction.

PubMed

Liu, Xiaochi; Qu, Deshun; Li, Hua-Min; Moon, Inyong; Ahmed, Faisal; Kim, Changsik; Lee, Myeongjin; Choi, Yongsuk; Cho, Jeong Ho; Hone, James C; Yoo, Won Jong

2017-09-26

Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS 2 ) heterojunctions. The characteristics of a backward rectifying diode, a Zener diode, and a forward rectifying diode were obtained from the heterojunction through thickness modulation of the BP flake or back gate modulation. Moreover, a tunnel diode with a precursor to negative differential resistance can be realized by applying dual gating with a solid polymer electrolyte layer as a top gate dielectric material. Interestingly, a steep subthreshold swing of 55 mV/dec was achieved in a top-gated 2D BP-MoS 2 junction. Our simple device architecture and chemical doping-free processing guaranteed the device quality. This work helps us understand the fundamentals of tunneling in 2D semiconductor heterostructures and shows great potential in future applications in integrated low-power circuits.

Baker-Barry Tunnel Lighting: Evaluation of a Potential GATEWAY Demonstrations Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tuenge, Jason R.

2011-06-01

The U.S. Department of Energy (DOE) is evaluating the Baker-Barry Tunnel as a potential GATEWAY Demonstrations project for deployment of solid-state lighting (SSL) technology. The National Park Service (NPS) views this project as a possible proving ground and template for implementation of light-emitting diode (LED) luminaires in other NPS tunnels, thereby expanding the estimated 40% energy savings from 132 MWh/yr for this tunnel to a much larger figure national

Long-range electron tunneling.

PubMed

Winkler, Jay R; Gray, Harry B

2014-02-26

Electrons have so little mass that in less than a second they can tunnel through potential energy barriers that are several electron-volts high and several nanometers wide. Electron tunneling is a critical functional element in a broad spectrum of applications, ranging from semiconductor diodes to the photosynthetic and respiratory charge transport chains. Prior to the 1970s, chemists generally believed that reactants had to collide in order to effect a transformation. Experimental demonstrations that electrons can transfer between reactants separated by several nanometers led to a revision of the chemical reaction paradigm. Experimental investigations of electron exchange between redox partners separated by molecular bridges have elucidated many fundamental properties of these reactions, particularly the variation of rate constants with distance. Theoretical work has provided critical insights into the superexchange mechanism of electronic coupling between distant redox centers. Kinetics measurements have shown that electrons can tunnel about 2.5 nm through proteins on biologically relevant time scales. Longer-distance biological charge flow requires multiple electron tunneling steps through chains of redox cofactors. The range of phenomena that depends on long-range electron tunneling continues to expand, providing new challenges for both theory and experiment.

Resonant tunneling with high peak to valley current ratio in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, D. Y., E-mail: cdy7659@126.com; Nanjing University of posts and Telecommunications, Nanjing 210046; Sun, Y.

We have investigated carrier transport in SiO{sub 2}/nc-Si/SiO{sub 2} multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V{sup 2}) as a function of 1/V and ln(I) as a function of V{sup 1/2}. Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratiomore » (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages.« less

MIS diode structure in As/+/ implanted CdS

NASA Technical Reports Server (NTRS)

Hutchby, J. A.

1977-01-01

Structure made by As implantation of carefully prepared high-conductivity CdS surfaces followed by Pt deposition and 450 C anneal display rectifying, although substantially different, I-V characteristics in the dark and during illumination with subband-gap light. Structures prepared in the same way on an unimplanted portion of the substrate have similar I-V characteristics, except that the forward turnover voltage for an illuminated unimplanted diode is much smaller than that for an implanted diode. It is suggested that the charge conduction in both structures is dominated by hole and/or electron tunneling through a metal-semiconductor potential barrier. The tunneling processes appear to be quite sensitive to subband-gap illumination, which causes the dramatic decreases of turnover voltages and apparent series resistances. The difference in turnover voltage appears to be caused by interface states between the Pt electrode and the implanted layer, which suggests a MIS model.

III-V heterostructure tunnel field-effect transistor.

PubMed

Convertino, C; Zota, C B; Schmid, H; Ionescu, A M; Moselund, K E

2018-07-04

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III-V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

III–V heterostructure tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Convertino, C.; Zota, C. B.; Schmid, H.; Ionescu, A. M.; Moselund, K. E.

2018-07-01

The tunnel field-effect transistor (TFET) is regarded as one of the most promising solid-state switches to overcome the power dissipation challenge in ultra-low power integrated circuits. TFETs take advantage of quantum mechanical tunneling hence exploit a different current control mechanism compared to standard MOSFETs. In this review, we describe state-of-the-art development of TFET both in terms of performances and of materials integration and we identify the main remaining technological challenges such as heterojunction defects and oxide/channel interface traps causing trap-assisted-tunneling (TAT). Mesa-structures, planar as well as vertical geometries are examined. Conductance slope analysis on InAs/GaSb nanowire tunnel diodes are reported, these two-terminal measurements can be relevant to investigate the tunneling behavior. A special focus is dedicated to III–V heterostructure TFET, as different groups have recently shown encouraging results achieving the predicted sub-thermionic low-voltage operation.

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

PubMed

Dey, Anil W; Svensson, Johannes; Ek, Martin; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

2013-01-01

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak

Resonant tunneling of surface plasmon polariton in the plasmonic nano-cavity.

PubMed

Park, Junghyun; Kim, Hwi; Lee, Il-Min; Kim, Seyoon; Jung, Jaehoon; Lee, Byoungho

2008-10-13

We investigate the reflection and transmission characteristics of the low-dielectric constant cut off barrier in the metal-insulator-metal (MIM) waveguide and propose a novel plasmonic nano-cavity made of two cut off barriers and the waveguide between them. It is shown that the anti-symmetric mode in the MIM waveguide with the core of the low dielectric constant below the specific value cannot be supported and this region can be regarded as a cut off barrier with high stability. The phase shift due to the reflection at the finite-length cut off barrier is calculated and the design scheme of the cavity length for the resonant tunneling is presented. The transmission spectra through the proposed nano-cavity are also discussed.

Regular-to-Chaotic Tunneling Rates: From the Quantum to the Semiclassical Regime

NASA Astrophysics Data System (ADS)

Löck, Steffen; Bäcker, Arnd; Ketzmerick, Roland; Schlagheck, Peter

2010-03-01

We derive a prediction of dynamical tunneling rates from regular to chaotic phase-space regions combining the direct regular-to-chaotic tunneling mechanism in the quantum regime with an improved resonance-assisted tunneling theory in the semiclassical regime. We give a qualitative recipe for identifying the relevance of nonlinear resonances in a given ℏ regime. For systems with one or multiple dominant resonances we find excellent agreement to numerics.

Spin-torque resonant expulsion of the vortex core for an efficient radiofrequency detection scheme.

PubMed

Jenkins, A S; Lebrun, R; Grimaldi, E; Tsunegi, S; Bortolotti, P; Kubota, H; Yakushiji, K; Fukushima, A; de Loubens, G; Klein, O; Yuasa, S; Cros, V

2016-04-01

It has been proposed that high-frequency detectors based on the so-called spin-torque diode effect in spin transfer oscillators could eventually replace conventional Schottky diodes due to their nanoscale size, frequency tunability and large output sensitivity. Although a promising candidate for information and communications technology applications, the output voltage generated from this effect has still to be improved and, more pertinently, reduces drastically with decreasing radiofrequency (RF) current. Here we present a scheme for a new type of spintronics-based high-frequency detector based on the expulsion of the vortex core in a magnetic tunnel junction (MTJ). The resonant expulsion of the core leads to a large and sharp change in resistance associated with the difference in magnetoresistance between the vortex ground state and the final C-state configuration. Interestingly, this reversible effect is independent of the incoming RF current amplitude, offering a fast real-time RF threshold detector.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Cr-Si Schottky nano-diodes utilizing anodic aluminum oxide templates.

PubMed

Kwon, Namyong; Kim, Kyohyeok; Heo, Jinhee; Chung, Ilsub

2014-04-01

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. The diameters of the diodes were 75.0, 57.6, and 35.8 nm. Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters due to an enhanced tunnel current contribution, which is attributed to a reduction in the barrier thickness. The diameters of Cr nanodots smaller than the Debye length (156 nm) play an important role in the reduction of barrier thickness. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs

NASA Astrophysics Data System (ADS)

Puchert, Robin P.; Steiner, Florian; Plechinger, Gerd; Hofmann, Felix J.; Caspers, Ines; Kirschner, Johanna; Nagler, Philipp; Chernikov, Alexey; Schüller, Christian; Korn, Tobias; Vogelsang, Jan; Bange, Sebastian; Lupton, John M.

2017-07-01

Few inventions have shaped the world like the incandescent bulb. Edison used thermal radiation from ohmically heated conductors, but some noble metals also exhibit 'cold' electroluminescence in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennas or scanning tunnelling microscopy. The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle electroluminescence is particularly intriguing because it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. Here, we demonstrate nanoscopic FRET-light-emitting diodes which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides. In diffraction-limited hotspots showing pronounced photon bunching, broadband silver electroluminescence is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-light-emitting diodes in on-chip optical interconnects.

Spectral focusing of broadband silver electroluminescence in nanoscopic FRET-LEDs.

PubMed

Puchert, Robin P; Steiner, Florian; Plechinger, Gerd; Hofmann, Felix J; Caspers, Ines; Kirschner, Johanna; Nagler, Philipp; Chernikov, Alexey; Schüller, Christian; Korn, Tobias; Vogelsang, Jan; Bange, Sebastian; Lupton, John M

2017-07-01

Few inventions have shaped the world like the incandescent bulb. Edison used thermal radiation from ohmically heated conductors, but some noble metals also exhibit 'cold' electroluminescence in percolation films, tunnel diodes, electromigrated nanoparticle aggregates, optical antennas or scanning tunnelling microscopy. The origin of this radiation, which is spectrally broad and depends on applied bias, is controversial given the low radiative yields of electronic transitions. Nanoparticle electroluminescence is particularly intriguing because it involves localized surface-plasmon resonances with large dipole moments. Such plasmons enable very efficient non-radiative fluorescence resonance energy transfer (FRET) coupling to proximal resonant dipole transitions. Here, we demonstrate nanoscopic FRET-light-emitting diodes which exploit the opposite process, energy transfer from silver nanoparticles to exfoliated monolayers of transition-metal dichalcogenides. In diffraction-limited hotspots showing pronounced photon bunching, broadband silver electroluminescence is focused into the narrow excitonic resonance of the atomically thin overlayer. Such devices may offer alternatives to conventional nano-light-emitting diodes in on-chip optical interconnects.

Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jheng-Sin; Clavel, Michael B.; Hudait, Mantu K., E-mail: mantu.hudait@vt.edu

The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fastmore » Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.« less

Temperature dependence of spin-torque driven ferromagnetic resonance in MgO-based magnetic tunnel junction with a perpendicularly free layer

NASA Astrophysics Data System (ADS)

Wang, Xiao; Feng, Jiafeng; Guo, Peng; Wei, H. X.; Han, X. F.; Fang, B.; Zeng, Z. M.

2017-12-01

We report the temperature dependence of the spin-torque (ST) driven ferromagnetic resonance in MgO-based magnetic tunnel junction (MTJ) nanopillars with a perpendicularly free layer and an in-plane reference layer. From the evolution of the resonance frequency with magnetic field, we clearly identify the free-layer resonance mode and reference-layer mode. For the reference layer, we demonstrate a monotonic increase in resonance frequency and the effective damping with decreasing temperature, which suggests the saturated magnetization of the reference layer is dominant. However, for the free layer, the frequency and damping exhibit almost no change with temperature, indicating that the perpendicular magnetic anisotropy plays an important role in magnetization dynamics of the free layer.

High Density Memory Based on Quantum Device Technology

NASA Technical Reports Server (NTRS)

vanderWagt, Paul; Frazier, Gary; Tang, Hao

1995-01-01

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

V-shaped resonators for addition of broad-area laser diode arrays

DOEpatents

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero-Bilayers.

PubMed

Luong, Dinh Hoa; Lee, Hyun Seok; Neupane, Guru Prakash; Roy, Shrawan; Ghimire, Ganesh; Lee, Jin Hee; Vu, Quoc An; Lee, Young Hee

2017-09-01

Vertically stacked van der Waals (vdW) heterostructures have been suggested as a robust platform for studying interfacial phenomena and related electric/optoelectronic devices. While the interlayer Coulomb interaction mediated by the vdW coupling has been extensively studied for carrier recombination processes in a diode transport, its correlation with the interlayer tunneling transport has not been elucidated. Here, a contrast is reported between tunneling and drift photocurrents tailored by the interlayer coupling strength in MoSe 2 /MoS 2 hetero-bilayers (HBs). The interfacial coupling modulated by thermal annealing is identified by the interlayer phonon coupling in Raman spectra and the emerging interlayer exciton peak in photoluminescence spectra. In strongly coupled HBs, positive photocurrents are observed owing to the inelastic band-to-band tunneling assisted by interlayer excitons that prevail over exciton recombinations. By contrast, weakly coupled HBs exhibit a negative photovoltaic diode behavior, manifested as a drift current without interlayer excitonic emissions. This study sheds light on tailoring the tunneling transport for numerous optoelectronic HB devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures.

PubMed

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi(2)/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi(2) conducting interlayer. The results show that the main emission properties were modified by varying the CoSi(2) thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi(2) interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi(2) layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays.

Superluminescence from an optically pumped molecular tunneling junction by injection of plasmon induced hot electrons

PubMed Central

Braun, Kai; Wang, Xiao; Kern, Andreas M; Adler, Hilmar; Peisert, Heiko; Chassé, Thomas; Zhang, Dai

2015-01-01

Summary Here, we demonstrate a bias-driven superluminescent point light-source based on an optically pumped molecular junction (gold substrate/self-assembled molecular monolayer/gold tip) of a scanning tunneling microscope, operating at ambient conditions and providing almost three orders of magnitude higher electron-to-photon conversion efficiency than electroluminescence induced by inelastic tunneling without optical pumping. A positive, steadily increasing bias voltage induces a step-like rise of the Stokes shifted optical signal emitted from the junction. This emission is strongly attenuated by reversing the applied bias voltage. At high bias voltage, the emission intensity depends non-linearly on the optical pump power. The enhanced emission can be modelled by rate equations taking into account hole injection from the tip (anode) into the highest occupied orbital of the closest substrate-bound molecule (lower level) and radiative recombination with an electron from above the Fermi level (upper level), hence feeding photons back by stimulated emission resonant with the gap mode. The system reflects many essential features of a superluminescent light emitting diode. PMID:26171286

Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors.

PubMed

Wensorra, J; Lepsa, M I; Trellenkamp, S; Moers, J; Indlekofer, K M; Lüth, H

2009-11-18

Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n++/i/n++ along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

PubMed

Simon, John; Zhang, Ze; Goodman, Kevin; Xing, Huili; Kosel, Thomas; Fay, Patrick; Jena, Debdeep

2009-07-10

The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-band-gap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.

PubMed

Desplanque, L; Fahed, M; Han, X; Chinni, V K; Troadec, D; Chauvat, M-P; Ruterana, P; Wallart, X

2014-11-21

We report on the selective area molecular beam epitaxy of InAs/AlGaSb heterostructures on a GaSb (001) substrate. This method is used to realize Esaki tunnel diodes with a tunneling area down to 50 nm × 50 nm. The impact of the size reduction on the peak current density of the diode is investigated, and we show how the formation of the InAs facets can deeply affect the band-to-band tunneling properties of the heterostructure. This phenomenon is explained by the surface-dependent incorporation of Si dopant during growth.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk; Krali, Emiljana

2015-11-30

Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions,more » in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.« less

Observation of radiative surface plasmons in metal-oxide-metal tunnel junctions

NASA Technical Reports Server (NTRS)

Donohue, J. F.; Yang, E. Y.

1986-01-01

A peak in the UV region of the spectrum of light emitted from metal-oxide-metal (MOM) tunnel junctions has been observed at room temperature. Both the amplitude and wavelength of the peak are sensitive to applied junction bias. The UV peak corresponds to the normal or radiative surface plasmon mode while a visible peak, also present in the present spectra and reported in past MOM literature, is due to the tangential or nonradiative mode. The radiative mode requires no surface roughness or gratings for photon coupling. The results show that it is possible to obtain radiative surface plasmon production followed by a direct decay into photons with MOM tunnel diodes. A MOM diode with a double anode structure is found to emit light associated only with the nonradiative mode. The thickness dependence of the UV peak, along with the experimental results of the double anode MOM diode and the ratio of the UV peak to visible peak, support the contention that the UV light emission is indeed due to the radiative surface plasmon.

Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies,more » since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.« less

Restoring proximal caries lesions conservatively with tunnel restorations

PubMed Central

Chu, Chun-Hung; Mei, May L; Cheung, Chloe; Nalliah, Romesh P

2013-01-01

The tunnel restoration has been suggested as a conservative alternative to the conventional box preparation for treating proximal caries. The main advantage of tunnel restoration over the conventional box or slot preparation includes being more conservative and increasing tooth integrity and strength by preserving the marginal ridge. However, tunnel restoration is technique-sensitive and can be particularly challenging for inexperienced restorative dentists. Recent advances in technology, such as the contemporary design of dental handpieces with advanced light-emitting diode (LED) and handheld comfort, offer operative dentists better vision, illumination, and maneuverability. The use of magnifying loupes also enhances the visibility of the preparation. The advent of digital radiographic imaging has improved dental imaging and reduced radiation. The new generation of restorative materials has improved mechanical properties. Tunnel restoration can be an option to restore proximal caries if the dentist performs proper case selection and pays attention to the details of the restorative procedures. This paper describes the clinical technique of tunnel restoration and reviews the studies of tunnel restorations. PMID:24019754

Restoring proximal caries lesions conservatively with tunnel restorations.

PubMed

Chu, Chun-Hung; Mei, May L; Cheung, Chloe; Nalliah, Romesh P

2013-07-30

The tunnel restoration has been suggested as a conservative alternative to the conventional box preparation for treating proximal caries. The main advantage of tunnel restoration over the conventional box or slot preparation includes being more conservative and increasing tooth integrity and strength by preserving the marginal ridge. However, tunnel restoration is technique-sensitive and can be particularly challenging for inexperienced restorative dentists. Recent advances in technology, such as the contemporary design of dental handpieces with advanced light-emitting diode (LED) and handheld comfort, offer operative dentists better vision, illumination, and maneuverability. The use of magnifying loupes also enhances the visibility of the preparation. The advent of digital radiographic imaging has improved dental imaging and reduced radiation. The new generation of restorative materials has improved mechanical properties. Tunnel restoration can be an option to restore proximal caries if the dentist performs proper case selection and pays attention to the details of the restorative procedures. This paper describes the clinical technique of tunnel restoration and reviews the studies of tunnel restorations.

Quantum Tunnelling to the Origin and Evolution of Life

PubMed Central

Trixler, Frank

2013-01-01

Quantum tunnelling is a phenomenon which becomes relevant at the nanoscale and below. It is a paradox from the classical point of view as it enables elementary particles and atoms to permeate an energetic barrier without the need for sufficient energy to overcome it. Tunnelling might seem to be an exotic process only important for special physical effects and applications such as the Tunnel Diode, Scanning Tunnelling Microscopy (electron tunnelling) or Near-field Optical Microscopy operating in photon tunnelling mode. However, this review demonstrates that tunnelling can do far more, being of vital importance for life: physical and chemical processes which are crucial in theories about the origin and evolution of life can be traced directly back to the effects of quantum tunnelling. These processes include the chemical evolution in stellar interiors and within the cold interstellar medium, prebiotic chemistry in the atmosphere and subsurface of planetary bodies, planetary habitability via insolation and geothermal heat as well as the function of biomolecular nanomachines. This review shows that quantum tunnelling has many highly important implications to the field of molecular and biological evolution, prebiotic chemistry and astrobiology. PMID:24039543

Field electron emission based on resonant tunneling in diamond/CoSi2/Si quantum well nanostructures

PubMed Central

Gu, Changzhi; Jiang, Xin; Lu, Wengang; Li, Junjie; Mantl, Siegfried

2012-01-01

Excellent field electron emission properties of a diamond/CoSi2/Si quantum well nanostructure are observed. The novel quantum well structure consists of high quality diamond emitters grown on bulk Si substrate with a nanosized epitaxial CoSi2 conducting interlayer. The results show that the main emission properties were modified by varying the CoSi2 thickness and that stable, low-field, high emission current and controlled electron emission can be obtained by using a high quality diamond film and a thicker CoSi2 interlayer. An electron resonant tunneling mechanism in this quantum well structure is suggested, and the tunneling is due to the long electron mean free path in the nanosized CoSi2 layer. This structure meets most of the requirements for development of vacuum micro/nanoelectronic devices and large-area cold cathodes for flat-panel displays. PMID:23082241

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Resonant tunneling in GaAs/Al xGa 1-xAs superlattices with aperiodic potential profiles

NASA Astrophysics Data System (ADS)

Djelti, R.; Aziz, Z.; Bentata, S.; Besbes, A.

2011-12-01

Using the exact Airy function formalism and the transfer-matrix technique, we have numerically investigated in this paper the effect of intentional correlations in spatial disorder on transmission properties of one-dimensional superlattices. Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that barriers (wells) of one kind always appear in triply. It is shown that the intentional correlations in disorder and superlattices structural parameters are responsible to obtain resonant tunneling in aperiodic structure.

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Evaluation of a silicon 5 MHz p–n diode actuator with a laterally vibrating extensional mode

NASA Astrophysics Data System (ADS)

Miyazaki, Fumito; Baba, Kazuki; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-05-01

In this paper, we describe p–n diode actuators that are laterally driven by the force induced in a depletion layer. The previously reported p–n diode actuators have been vertically driven. Because the resonant frequency depends on the thickness of the vibrating plate, the integration of resonators with different frequencies on a chip has been difficult. The resonators in this work are driven laterally by using length-extensional vibration. We have developed a compact model based on an analytical expression, in which p–n diode actuators are driven by the forces induced by the spread of the depletion layer. The deflection generated by the p–n diode actuators was proportional to the ratio of the depletion layer width to the resonator thickness as well as the position of the p–n junction. Good agreement of experimental results with the theory was confirmed by comparing the measured values for silicon p–n diode rectangular-plate actuators fabricated using a silicon-on-insulator (SOI) substrate. The displacement amplitude of the actuators was proportional to the DC bias, while the resonant frequency was independent of the DC bias. The latter characteristic is very different from that of widely used electrostatic actuators. Although the amplitude of the actuator measured in this work was very small, it is expected that the amplitude will increase greatly by increasing the doping of the p–n diode actuators.

Single-frequency diode-pumped lasers for free-space optical communication

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Cheng, Emily A. P.; Gerstenberger, David C.; Wallace, Richard W.

1990-01-01

Recent advances in laser technology for intersatellite optical communication systems are reviewed and illustrated with graphs and diagrams. Topics addressed include (1) single-frequency diode-pumped Nd:YAG lasers of monolithic ring configuration (yielding 368-384 mW output power with 1-W pumping), (2) injection chaining of up to 10 monolithic resonators to achieve redundancy and/or higher output power, (3) 2-kHz-linewidth 5-mW versions of (1) which are tunable over a 30-MHz range for use as local oscillators in coherent communication, (4) resonant external modulation and doubling or resonant phase modulation of diode-pumped lasers, and (5) wavelength multiplexing.

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

2018-02-01

In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

Resonant tunneling via a Ru-dye complex using a nanoparticle bridge junction.

PubMed

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-15

Nonlinear current-voltage (I-V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru-dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I-V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I-V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

Resonant tunneling via a Ru–dye complex using a nanoparticle bridge junction

NASA Astrophysics Data System (ADS)

Nishijima, Satoshi; Otsuka, Yoichi; Ohoyama, Hiroshi; Kajimoto, Kentaro; Araki, Kento; Matsumoto, Takuya

2018-06-01

Nonlinear current–voltage (I–V) characteristics is an important property for the realization of information processing in molecular electronics. We studied the electrical conduction through a Ru–dye complex (N-719) on a 2-aminoethanethiol (2-AET) monolayer in a nanoparticle bridge junction system. The nonlinear I–V characteristics exhibited a threshold voltage at around 1.2 V and little temperature dependence. From the calculation of the molecular states using density functional theory and the energy alignment between the electrodes and molecules, the conduction mechanism in this system was considered to be resonant tunneling via the HOMO level of N-719. Our results indicate that the weak electronic coupling of electrodes and molecules is essential for obtaining nonlinear I–V characteristics with a clear threshold voltage that reflect the intrinsic molecular state.

Submillimeter wave detection with superconducting tunnel diodes

NASA Technical Reports Server (NTRS)

Wengler, Michael J.

1992-01-01

Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, wemore » generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.« less

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

NASA Astrophysics Data System (ADS)

Savanier, Marc; Mookherjea, Shayan

2016-06-01

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

Analysis of different forward current-voltage behaviours of Al implanted 4H-SiC vertical p-i-n diodes

NASA Astrophysics Data System (ADS)

Megherbi, M. L.; Pezzimenti, F.; Dehimi, L.; Rao, S.; Della Corte, F. G.

2015-07-01

In this work different experimental current-voltage behaviours of several Al implanted 4H-SiC p-i-n diodes are investigated by means of numerical simulations in a wide range of currents and temperatures. Some devices for which recombination and tunneling are the dominant current processes at all biases are classified as "leaky" diodes. The well behaved diodes, instead, show good rectifying characteristics with a current conduction due to tunneling below 1.7 V, recombination between 1.7 V and 2.5 V, and diffusion processes above 2.5 V. At higher current regimes, a series resistance in excess of 1 mΩ cm2 becomes the main current limiting factor. Depending on the relative weight between the contact resistances and the internal diode resistance, different temperature dependencies of the current are obtained. A good agreement between numerical and measured data is achieved employing temperature-dependent carrier lifetime and mobility as fitting parameters.

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers: A novel technique for ultratrace gas analysis and high-resolution spectroscopy.

PubMed

Hippler, Michael; Mohr, Christian; Keen, Katherine A; McNaghten, Edward D

2010-07-28

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers (OF-CERPAS) is introduced as a novel technique for ultratrace gas analysis and high-resolution spectroscopy. In the scheme, a single-mode cw diode laser (3 mW, 635 nm) is coupled into a high-finesse linear cavity and stabilized to the cavity by optical feedback. Inside the cavity, a build-up of laser power to at least 2.5 W occurs. Absorbing gas phase species inside the cavity are detected with high sensitivity by the photoacoustic effect using a microphone embedded in the cavity. To increase sensitivity further, coupling into the cavity is modulated at a frequency corresponding to a longitudinal resonance of an organ pipe acoustic resonator (f=1.35 kHz and Q approximately 10). The technique has been characterized by measuring very weak water overtone transitions near 635 nm. Normalized noise-equivalent absorption coefficients are determined as alpha approximately 4.4x10(-9) cm(-1) s(1/2) (1 s integration time) and 2.6x10(-11) cm(-1) s(1/2) W (1 s integration time and 1 W laser power). These sensitivities compare favorably with existing state-of-the-art techniques. As an advantage, OF-CERPAS is a "zero-background" method which increases selectivity and sensitivity, and its sensitivity scales with laser power.

Enhancement of the transverse magneto-optical Kerr effect via resonant tunneling in trilayers containing magneto-optical metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Girón-Sedas, J. A.; Centro de Investigación e Innovación en Bioinformática y Fotónica - CIBioFI, AA 25360 Cali; Mejía-Salazar, J. R., E-mail: jrmejia3146@gmail.com

We propose a way to enhance the transverse magneto-optical Kerr effect, by the excitation of resonant tunneling modes, in subwavelength trilayer structures featuring a dielectric slab sandwiched between two magneto-optical metallic layers. Depending on the magneto-optical layer widths, the proposed system may exhibit an extraordinary transverse magneto-optical Kerr effect, which makes it very attractive for the design and engineering of thin-film magneto-optical-based devices for future photonic circuits or fiber optical-communication systems.

Analysis and Design of Symmetrical Capacitor Diode Voltage Multiplier Driven by LCL-T Resonant Converter

NASA Astrophysics Data System (ADS)

Malviya, Devesh; Borage, Mangesh Balkrishna; Tiwari, Sunil

2017-12-01

This paper investigates the possibility of application of Resonant Immittance Converters (RICs) as a current source for the current-fed symmetrical Capacitor-Diode Voltage Multiplier (CDVM) with LCL-T Resonant Converter (RC) as an example. Firstly, detailed characterization of the current-fed symmetrical CDVM is carried out using repeated simulations followed by the normalization of the simulation results in order to derive the closed-form curve fit equations to predict the operating modes, output voltage and ripple in terms of operating parameters. RICs, due to their ability to convert voltage source into a current source, become a possible candidate for the realization of current source for the current-fed symmetrical CDVM. Detailed analysis, optimization and design of LCL-T RC with CDVM is performed in this paper. A step by step design procedure for the design of CDVM and the converter is proposed. A 5-stage prototype symmetrical CDVM driven by LCL-T RC to produce 2.5 kV, 50 mA dc output voltage is designed, built and tested to validate the findings of the analysis and simulation.

Coupling characteristics of thin-film metal-oxide-metal diodes at 10.6 microns

NASA Technical Reports Server (NTRS)

Wang, S. Y.; Gustafson, T. K.; Izawa, T.

1975-01-01

Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.

On the tunneling time of ultracold atoms through a system of two mazer cavities.

PubMed

Badshah, Fazal; Ge, Guo-Qin; Irfan, Muhammad; Qamar, Sajid; Qamar, Shahid

2018-01-30

We study the resonant tunneling of ultraslow atoms through a system of high quality microwave cavities. We find that the phase tunneling time across the two coupled cavities exhibits more frequent resonances as compared to the single cavity interaction. The increased resonances are instrumental in the display of an alternate sub and superclassical character of the tunneling time along the momentum axis with increasing energies of the incident slow atoms. Here, the intercavity separation appears as an additional controlling parameter of the system that provides an efficient control of the superclassical behavior of the phase tunneling time. Further, we find that the phase time characteristics through two cavity system has the combined features of the tunneling through a double barrier and a double well arrangements.

A compact tunable diode laser absorption spectrometer to monitor CO2 at 2.7 μm wavelength in hypersonic flows.

PubMed

Vallon, Raphäel; Soutadé, Jacques; Vérant, Jean-Luc; Meyers, Jason; Paris, Sébastien; Mohamed, Ajmal

2010-01-01

Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship's Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow.

A Compact Tunable Diode Laser Absorption Spectrometer to Monitor CO2 at 2.7 μm Wavelength in Hypersonic Flows

PubMed Central

Vallon, Raphäel; Soutadé, Jacques; Vérant, Jean-Luc; Meyers, Jason; Paris, Sébastien; Mohamed, Ajmal

2010-01-01

Since the beginning of the Mars planet exploration, the characterization of carbon dioxide hypersonic flows to simulate a spaceship’s Mars atmosphere entry conditions has been an important issue. We have developed a Tunable Diode Laser Absorption Spectrometer with a new room-temperature operating antimony-based distributed feedback laser (DFB) diode laser to characterize the velocity, the temperature and the density of such flows. This instrument has been tested during two measurement campaigns in a free piston tunnel cold hypersonic facility and in a high enthalpy arc jet wind tunnel. These tests also demonstrate the feasibility of mid-infrared fiber optics coupling of the spectrometer to a wind tunnel for integrated or local flow characterization with an optical probe placed in the flow. PMID:22219703

Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages

NASA Astrophysics Data System (ADS)

Kanai, Shun; Gajek, Martin; Worledge, D. C.; Matsukura, Fumihiro; Ohno, Hideo

2014-12-01

We measure homodyne-detected ferromagnetic resonance (FMR) induced by the electric-field effect in a CoFeB/MgO/CoFeB magnetic tunnel junction (MTJ) with perpendicular magnetic easy axis under dc bias voltages up to 0.1 V. From the bias dependence of the resonant frequency, we find that the first order perpendicular magnetic anisotropy is modulated by the applied electric field, whereas the second order component is virtually independent of the electric field. The lineshapes of the FMR spectra are bias dependent, which are explained by the combination of electric-field effect and reflection of the bias voltage from the MTJ.

Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

DTIC Science & Technology

2011-12-01

1 2. MIM Model 1 2.1 Potential Energy and Image Potential . . . . . . . . . . . . . . . . . . . . . . 1 2.2 Thermionic Emission -limited Current ...4 4 Thermionic emission -limited current through the symmetric MIM diode in figure 1...7 7 Absolute value of tunnel-limited, thermal emission -limited, and total currents vs. applied bias for the

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content

NASA Astrophysics Data System (ADS)

Akyol, Fatih; Zhang, Yuewei; Krishnamoorthy, Sriram; Rajan, Siddharth

2017-12-01

We report a combination of highly doped layers and polarization engineering that achieves highly efficient blue-transparent GaN/InGaN/GaN tunnel junctions (In content = 12%). NPN diode structures with a low voltage drop of 4.04 V at 5 kA/cm2 and a differential resistance of 6.51 × 10-5 Ω·cm2 at 3 kA/cm2 were obtained. The tunnel junction design with n++-GaN (Si: 5 × 1020 cm-3)/3 nm p++-In0.12Ga0.88N (Mg: 1.5 × 1020 cm-3)/p++-GaN (Mg: 5 × 1020 cm-3) showed the best device performance. Device simulations agree well with the experimentally determined optimal design. The combination of low In composition and high doping can facilitate lower tunneling resistance for blue-transparent light-emitting diodes.

Efficient second harmonic generation of a diode-laser-pumped CW Nd:YAG laser using monolithic MgO:LiNbO3 external resonant cavities

NASA Technical Reports Server (NTRS)

Kozlovsky, William J.; Nabors, C. D.; Byer, Robert L.

1988-01-01

56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

NASA Technical Reports Server (NTRS)

Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

1992-01-01

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Giant spin-torque diode sensitivity in the absence of bias magnetic field.

PubMed

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A; Krivorotov, Ilya N; Ocker, Berthold; Langer, Juergen; Wang, Kang L; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-04-07

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW(-1) at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.

Giant spin-torque diode sensitivity in the absence of bias magnetic field

PubMed Central

Fang, Bin; Carpentieri, Mario; Hao, Xiaojie; Jiang, Hongwen; Katine, Jordan A.; Krivorotov, Ilya N.; Ocker, Berthold; Langer, Juergen; Wang, Kang L.; Zhang, Baoshun; Azzerboni, Bruno; Amiri, Pedram Khalili; Finocchio, Giovanni; Zeng, Zhongming

2016-01-01

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1 at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors. PMID:27052973

Blue diode laser versus traditional infrared diode laser and quantic molecular resonance scalpel: clinical and histological findings after excisional biopsy of benign oral lesions

NASA Astrophysics Data System (ADS)

Gobbo, Margherita; Bussani, Rossana; Perinetti, Giuseppe; Rupel, Katia; Bevilaqua, Lorenzo; Ottaviani, Giulia; Biasotto, Matteo

2017-12-01

This study aims to compare the use of the innovative blue diode laser (BLUE group) with two traditional surgical techniques: the infrared diode laser (IR group) and the quantic molecular resonance scalpel (QMR group) in the excision of benign oral lesions. Ninety-three patients underwent surgical excision of a benign oral lesion and were followed up for 30 days for pain (0 to 10 visual analogue scale), bleeding, and painkillers' assumption (yes/no). A blind pathologist evaluated the thermal damage along the cutting margin. Although referred pain was lowest in the BLUE group from day 7 on (p<0.05), all patients referred minimum discomfort after surgery. The BLUE group reported minimum bleeding and necessity of sutures (p<0.000). The QMR group showed the highest bleeding during surgery (p<0.000), while after 14 and 30 days no patient bled. Most of the patients in all groups did not need painkillers. The lowest thermal damage (p<0.000) was found in the BLUE group (71.3±51.8 μm), whereas the IR group proved the highest (186.8±82.7 μm) compared both with the BLUE and QMR (111.4±55.4 μm) groups. All the techniques allowed correct histological sampling. All the experimented techniques offer interesting advantages, although the blue laser minimizes risk of bleeding with limited thermal damage.

Enhanced ferromagnetic resonance linewidth of the free layer in perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gopman, D. B.; Dennis, C. L.; McMichael, R. D.; Hao, X.; Wang, Z.; Wang, X.; Gan, H.; Zhou, Y.; Zhang, J.; Huai, Y.

2017-05-01

We report the frequency dependence of the ferromagnetic resonance linewidth of the free layer in magnetic tunnel junctions with all perpendicular-to-the-plane magnetized layers. While the magnetic-field-swept linewidth nominally shows a linear growth with frequency in agreement with Gilbert damping, an additional frequency-dependent linewidth broadening occurs that shows a strong asymmetry between the absorption spectra for increasing and decreasing external magnetic field. Inhomogeneous magnetic fields produced during reversal of the reference and pinned layer complex is demonstrated to be at the origin of the symmetry breaking and the linewidth enhancement. Consequentially, this linewidth enhancement provides indirect information on the magnetic coercivity of the reference and pinned layers. These results have important implications for the characterization of perpendicular magnetized magnetic random access memory bit cells.

Investigating spin-transfer torques induced by thermal gradients in magnetic tunnel junctions by using micro-cavity ferromagnetic resonance

NASA Astrophysics Data System (ADS)

Cansever, H.; Narkowicz, R.; Lenz, K.; Fowley, C.; Ramasubramanian, L.; Yildirim, O.; Niesen, A.; Huebner, T.; Reiss, G.; Lindner, J.; Fassbender, J.; Deac, A. M.

2018-06-01

Similar to electrical currents flowing through magnetic multilayers, thermal gradients applied across the barrier of a magnetic tunnel junction may induce pure spin-currents and generate ‘thermal’ spin-transfer torques large enough to induce magnetization dynamics in the free layer. In this study, we describe a novel experimental approach to observe spin-transfer torques induced by thermal gradients in magnetic multilayers by studying their ferromagnetic resonance response in microwave cavities. Utilizing this approach allows for measuring the magnetization dynamics on micron/nano-sized samples in open-circuit conditions, i.e. without the need of electrical contacts. We performed first experiments on magnetic tunnel junctions patterned into 6  ×  9 µm2 ellipses from Co2FeAl/MgO/CoFeB stacks. We conducted microresonator ferromagnetic resonance (FMR) under focused laser illumination to induce thermal gradients in the layer stack and compared them to measurements in which the sample was globally heated from the backside of the substrate. Moreover, we carried out broadband FMR measurements under global heating conditions on the same extended films the microstructures were later on prepared from. The results clearly demonstrate the effect of thermal spin-torque on the FMR response and thus show that the microresonator approach is well suited to investigate thermal spin-transfer-driven processes for small temperatures gradients, far below the gradients required for magnetic switching.

Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vexler, M. I., E-mail: vexler@mail.ioffe.ru; Illarionov, Yu. Yu.; Grekhov, I. V.

The prerequisites for electron storage in the quantum well of a metal–oxide–p{sup +}-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO{sub 2}, HfO{sub 2}, and TiO{sub 2} insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) × 10{sup 18} to (2–3) × 10{sup 19} cm{sup –3} in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in themore » structures with SiO{sub 2}/p{sup +}-Si(10{sup 19} cm{sup –3}) should exceed ~3 nm. The electron density in the well can reach ~10{sup 12} cm{sup –2} and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.« less

Tunneling spin polarization in planar tunnel junctions: measurements using NbN superconducting electrodes and evidence for Kondo-assisted tunneling

NASA Astrophysics Data System (ADS)

Yang, Hyunsoo

2006-03-01

The fundamental origin of tunneling magnetoresistance in magnetic tunnel junctions (MTJs) is the spin-polarized tunneling current, which can be measured directly using superconducting tunneling spectroscopy (STS). The STS technique was first developed by Meservey and Tedrow using aluminum superconducting electrodes. Al has been widely used because of its low spin orbit scattering. However, measurements must be made at low temperatures (<0.4 K) because of the low superconducting transition temperature of Al. Here, we demonstrate that superconducting electrodes formed from NbN can be used to measure tunneling spin polarization (TSP) at higher temperatures up to ˜1.2K. The tunneling magnetoresistance and polarization of the tunneling current in MTJs is highly sensitive to the detailed structure of the tunneling barrier. Using MgO tunnel barriers we find TSP values as high as 90% at 0.25K. The TMR is, however, depressed by insertion of ultra thin layers of both non-magnetic and magnetic metals in the middle of the MgO barrier. For ultra-thin, discontinuous magnetic layers of CoFe, we find evidence of Kondo assisted tunneling, from increased conductance at low temperatures (<50K) and bias voltage (<20 mV). Over the same temperature and bias voltage regimes the tunneling magnetoresistance is strongly depressed. We present other evidence of Kondo resonance including the logarithmic temperature dependence of the zero bias conductance peak. We infer the Kondo temperature from both the spectra width of this conductance peak as well as the temperature dependence of the TMR depression. The Kondo temperature is sensitive to the thickness of the inserted CoFe layer and decreases with increased CoFe thickness. * performed in collaboration with S-H. Yang, C. Kaiser, and S. Parkin.

Resonant inelastic scattering by use of geometrical optics.

PubMed

Schulte, Jörg; Schweiger, Gustav

2003-02-01

We investigate the inelastic scattering on spherical particles that contain one concentric inclusion in the case of input and output resonances, using a geometrical optics method. The excitation of resonances is included in geometrical optics by use of the concept of tunneled rays. To get a quantitative description of optical tunneling on spherical surfaces, we derive appropriate Fresnel-type reflection and transmission coefficients for the tunneled rays. We calculate the inelastic scattering cross section in the case of input and output resonances and investigate the influence of the distribution of the active material in the particle as well as the influence of the inclusion on inelastic scattering.

Inter-ribbon tunneling in graphene: An atomistic Bardeen approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van de Put, Maarten L., E-mail: maarten.vandeput@uantwerpen.be; Magnus, Wim; imec, B-3001 Heverlee

A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases inmore » current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase in the current occurs if the signs are opposite. Changing the doping modulates the onset-voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic empirical pseudopotentials based Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases in the current we observe in graphene ribbons are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states.« less

Concept for room temperature single-spin tunneling force microscopy with atomic spatial resolution

NASA Astrophysics Data System (ADS)

Payne, Adam

A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy (AFM) system noise. The results show that the approach could provide single-spin measurement of electrically isolated defect states with atomic spatial resolution at room temperature.

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor-liquid-solid method

NASA Astrophysics Data System (ADS)

Kawaguchi, Kenichi; Takahashi, Tsuyoshi; Okamoto, Naoya; Sato, Masaru

2018-02-01

p-GaAsSb/n-InAs type-II nanowire (NW) diodes were fabricated using the position-controlled vapor-liquid-solid growth method. InAs and GaAsSb NW segments were grown vertically on GaAs(111)B substrates with the assistance of Au catalysts. Transmission electron microscopy-energy-dispersive X-ray spectroscopy analysis revealed that the GaAsSb segments have an Sb content of 40%, which is sufficient to form a tunnel heterostructure. Scanning capacitance microscope images clearly indicated the formation of a p-n junction in the NWs. Backward diode characteristics, that is, current flow toward negative bias originating from a tunnel current and current suppression toward positive bias by a heterobarrier, were demonstrated.

Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

NASA Astrophysics Data System (ADS)

Lu, Juan; Fan, Zhi-Qiang; Gong, Jian; Jiang, Xiang-Wei

2017-06-01

The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green's function formalism with density functional theory. Aiming at performance improvement, two types of defect-induced transport behaviors are reported in this work. By examining the partial density of states of the system, we find the substitutional defect OAs that locates in the middle of tunneling region will introduce band-gap states, which can be used as stepping stones to increase the tunneling current nearly 3 times higher at large bias voltage (Vb≥0.3V). Another type of defects SeAs and VGa (Ga vacancy) create donor and acceptor states at the edge of conduction band (CB) and valence band (VB)respectively, which can change the band bending of the junction as well as increase the tunneling field obtaining a 1.5 times higher ON current. This provides an effective defect engineering approach for next generation TFET device design.

Surface Interaction Kinetics of GaAs (100) Surfaces Under Electron Cyclotron Resonance Nitrogen Plasma Exposure

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Hauenstein, R. J.; Bandić, Z. Z.; Feenstra, R. M.; Hwang, S. J.; McGill, T. C.

1996-03-01

GaN is a robust semiconducting material offering a large, direct bandgap appropriate for use in blue-green to UV light emitting diodes and laser diodes. Attainment of device quality GaN has been difficult due to the lack of substrate materials that are suitably matched to the unusually small lattice parameter of GaN. To better control heteroepitaxial growth quality, a fundamental study of the initial stages of GaN growth by Electron Cyclotron Resonance Nitrogen Plasma-Assisted Molecular Beam Epitaxy (ECR-MBE) has been performed. The effect of an ECR Nitrogen plasma on a GaAs (100) surface is examined through time resolved reflection high energy electron diffraction, high resolution x-ray diffraction, and cross-sectional scanning tunneling microscopy. Fully commensurate GaN_yAs_1-y/GaAs heterostructures involving ultrathin GaN_yAs_1-y layers are obtained, and thermally activated microscopic growth processes are identified and quantitatively characterized through the aid of a specially developed kinetic model. The implications for ECR-MBE growth of GaN/GaAs mutilayers is discussed.

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

NASA Technical Reports Server (NTRS)

Schlecht, E.; Maiwald, F.; Chattopadhyay, G.; Martin, S.; Mehdi, I.

2001-01-01

Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.

Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Pathak, C. S.; Garg, Manjari; Singh, J. P.; Singh, R.

2018-05-01

The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0–4.4 and 0.50–0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.

Tunneling explains efficient electron transport via protein junctions.

PubMed

Fereiro, Jerry A; Yu, Xi; Pecht, Israel; Sheves, Mordechai; Cuevas, Juan Carlos; Cahen, David

2018-05-15

Metalloproteins, proteins containing a transition metal ion cofactor, are electron transfer agents that perform key functions in cells. Inspired by this fact, electron transport across these proteins has been widely studied in solid-state settings, triggering the interest in examining potential use of proteins as building blocks in bioelectronic devices. Here, we report results of low-temperature (10 K) electron transport measurements via monolayer junctions based on the blue copper protein azurin (Az), which strongly suggest quantum tunneling of electrons as the dominant charge transport mechanism. Specifically, we show that, weakening the protein-electrode coupling by introducing a spacer, one can switch the electron transport from off-resonant to resonant tunneling. This is a consequence of reducing the electrode's perturbation of the Cu(II)-localized electronic state, a pattern that has not been observed before in protein-based junctions. Moreover, we identify vibronic features of the Cu(II) coordination sphere in transport characteristics that show directly the active role of the metal ion in resonance tunneling. Our results illustrate how quantum mechanical effects may dominate electron transport via protein-based junctions.

Diode-laser-based RIMS measurements of strontium-90

NASA Astrophysics Data System (ADS)

Bushaw, B. A.; Cannon, B. D.

1998-12-01

Double- and triple-resonance excitation schemes for the ionization of strontium are presented. Use of single-mode diode lasers for the resonance excitations provides a high degree of optical isotopic selectivity: with double-resonance, selectivity of >104 for 90Sr against the stable Sr isotopes has been demonstrated. Measurement of lineshapes and stable isotope shifts in the triple-resonance process indicate that optical selectivity should increase to ˜109. When combined with mass spectrometer selectivity this is sufficient for measurement of 90Sr at background environmental levels. Additionally, autoionizing resonances have been investigated for improving ionization efficiency with lower power lasers.

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

NASA Astrophysics Data System (ADS)

Afzalian, Aryan; Colinge, Jean-Pierre; Flandre, Denis

2011-05-01

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green's Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V G, i.e. an improved slope characteristic, and hence an improved Ion/ Ioff ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant Ion/ Ioff ratio improvement, even with threshold voltage below 0.2 V and supply voltage V dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.

Valley-spin filtering through a nonmagnetic resonant tunneling structure in silicene

NASA Astrophysics Data System (ADS)

Wu, Xiuqiang; Meng, Hao; Zhang, Haiyang; Bai, Yujie; Xu, Xing

2018-07-01

We theoretically investigate how a silecene-based nonmagnetic resonant-tunneling structure, i.e. a double electrostatic potential structure, can be tailored to generate valley- and spin-polarized filtering by using the scattering matrix method. This method allows us to find simple analytical expressions for the scattering amplitudes. It is found that the transmissions of electrons from opposite spin and valley show exactly opposite behaviors, leading to valley and spin filtering in a wide range of transmission directions. These directional-dependent valley-spin polarization behaviors can be used to select preferential directions along which the valley-spin polarization of an initially unpolarized carrier can be strongly enhanced. We also find that this phenomenon arises from the combinations of the coherent effect, electrostatic potential and external electric field. Especially when the direction of the external electric field is changed, the spin filtering properties are contained, while the valley filtering properties can be switched. In addition, the filtering behaviors can be conveniently controlled by electrical gating. Therefore, the results can offer an all-electric method to construct a valley-spin filter in silicene.

Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

NASA Astrophysics Data System (ADS)

Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

2018-04-01

Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

Robust Sub-harmonic Mixer at 340 GHz Using Intrinsic Resonances of Hammer-Head Filter and Improved Diode Model

NASA Astrophysics Data System (ADS)

Wang, Cheng; He, Yue; Lu, Bin; Jiang, Jun; Miao, Li; Deng, Xian-Jin; Xiong, Yong-zhong; Zhang, Jian

2017-11-01

This paper presents a sub-harmonic mixer at 340 GHz based on anti-parallel Schottky diodes (SBDs). Intrinsic resonances in low-pass hammer-head filter have been adopted to enhance the isolation for different harmonic components, while greatly minimizing the transmission loss. The application of new DC grounding structure, impedance matching structure, and suspended micro-strip mitigates the negative influences of fabrication errors from metal cavity, quartz substrate, and micro-assembly. An improved lumped element equivalent circuit model of SBDs guarantees the accuracy of simulation, which takes current-voltage (I/V) behavior, capacitance-voltage (C/V) behavior, carrier velocity saturation, DC series resistor, plasma resonance, skin effect, and four kinds of noise generation mechanisms into consideration thoroughly. The measurement indicates that with local oscillating signal of 2 mW, the lowest double sideband conversion loss is 5.5 dB at 339 GHz; the corresponding DSB noise temperature is 757 K. The 3 dB bandwidth of conversion loss is 50 GHz from 317 to 367 GHz.

Relativistic Quantum Transport in Graphene Systems

DTIC Science & Technology

2015-07-09

which is desirable in the development of nanoscale devices such as graphene-based resonant- tunneling diodes . Details of this work can be found in • L... tunneling , etc. The AFOSR support helped create a new field of interdisciplinary research: Relativistic Quantum Chaos, which studies the relativistic quantum...Objectives 2 2 List of Publications 2 3 Accomplishments and New Findings 3 3.1 Solutions of Dirac equation, relativistic quantum tunneling and

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

Diode lasers optimized in brightness for fiber laser pumping

NASA Astrophysics Data System (ADS)

Kelemen, M.; Gilly, J.; Friedmann, P.; Hilzensauer, S.; Ogrodowski, L.; Kissel, H.; Biesenbach, J.

2018-02-01

In diode laser applications for fiber laser pumping and fiber-coupled direct diode laser systems high brightness becomes essential in the last years. Fiber coupled modules benefit from continuous improvements of high-power diode lasers on chip level regarding output power, efficiency and beam characteristics resulting in record highbrightness values and increased pump power. To gain high brightness not only output power must be increased, but also near field widths and far field angles have to be below a certain value for higher power levels because brightness is proportional to output power divided by beam quality. While fast axis far fields typically show a current independent behaviour, for broadarea lasers far-fields in the slow axis suffer from a strong current and temperature dependence, limiting the brightness and therefore their use in fibre coupled modules. These limitations can be overcome by carefully optimizing chip temperature, thermal lensing and lateral mode structure by epitaxial and lateral resonator designs and processing. We present our latest results for InGaAs/AlGaAs broad-area single emitters with resonator lengths of 4mm emitting at 976nm and illustrate the improvements in beam quality over the last years. By optimizing the diode laser design a record value of the brightness for broad-area lasers with 4mm resonator length of 126 MW/cm2sr has been demonstrated with a maximum wall-plug efficiency of more than 70%. From these design also pump modules based on 9 mini-bars consisting of 5 emitters each have been realized with 360W pump power.

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE PAGES

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

2016-10-04

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Samuel M. Myers; Modine, Normand A.

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination inmore » the emitter-base depletion region.« less

15 mJ single-frequency Ho:YAG laser resonantly pumped by a 1.9 µm laser diode

NASA Astrophysics Data System (ADS)

Na, Q. X.; Gao, C. Q.; Wang, Q.; Zhang, Y. X.; Gao, M. W.; Ye, Q.; Li, Y.

2016-09-01

A 2.09 µm injection-seeded single-frequency Ho:YAG laser resonantly pumped by a 1.91 µm laser diode is demonstrated for the first time. The seed laser is a continuous wave (CW) Ho:YAG non-planar ring oscillator. 15.15 mJ single-frequency output energy is obtained from the injection-seeded Q-switched Ho:YAG laser, with a pulse repetition rate of 200 Hz and a pulse width of 109 ns. The half-width of the pulse spectrum is measured to be 4.19 MHz by using the heterodyne technique. The fluctuation of the center frequency of the single-frequency pulses is 1.52 MHz (root mean square (RMS)) in 1 h.

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, B. S.; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190; Barate, P.

Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (P{sub c}) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determinedmore » only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.« less

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

Dark channels in resonant tunneling transport through artificial atoms.

PubMed

Vaz, Eduardo; Kyriakidis, Jordan

2008-07-14

We investigate sequential tunneling through a multilevel quantum dot confining multiple electrons in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.