Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnston, Steven; Sulas, Dana; Guthrey, Harvey L

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities maymore » cause thermal damage in a partial-shading event.« less

Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

PubMed

Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

2014-03-28

A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

Observation of current reversal in the scanning tunneling spectra of fullerene-like WS2 nanoparticles.

PubMed

Azulay, Doron; Kopnov, Frieda; Tenne, Reshef; Balberg, Isaac; Millo, Oded

2006-04-01

Current-voltage characteristics measured using STM on fullerene-like WS2 nanoparticles show zero-bias current and contain segments in which the tunneling current flows opposite to the applied bias voltage. In addition, negative differential conductance peaks emerge in these reversed current segments, and the characteristics are hysteretic with respect to the change in the voltage sweep direction. Such unusual features resemble those appearing in cyclic voltammograms, but are uniquely observed here in tunneling spectra measured in vacuum, as well as in ambient and dry atmosphere conditions. This behavior is attributed to tunneling-driven electrochemical processes.

Low-Cost, High-Performance Analog Optical Links

DTIC Science & Technology

2006-12-01

connected by tunnel junctions, which permit the forward conduction of current when they are reverse biased . Hence a key step in the development of the... bias voltage, where the measured IV is shown by the dotted curve. The common tunnel junction IV model assumed a triangular-shaped band structure. A... tunneling characteristics with negative differential resistance and a resistance under reverse bias around 12 Ω. This was higher than the previously grown

Two-fluid dynamo relaxation and momentum transport induced by CHI on HIST

NASA Astrophysics Data System (ADS)

Nagata, Masayoshi; Hirono, Hidetoshi; Hanao, Takafumi; Hyobu, Takahiro; Ito, Kengo; Matsumoto, Keisuke; Nakayama, Takashi; Oki, Nobuharu; Kikuchi, Yusuke; Fukumoto, Naoyuki

2013-10-01

Non-inductive current drive by using Multi-pulsing coaxial helicity injection was studied on HIST. In the double-pulsing CHI experiment, we have examined two-fluid effects by reversing polarity of the bias poloidal coil current. In the ST magnetic configurations with the right-handed magnetic field (positive CHI), there are a diamagnetic structure in the open flux column region and a paramagnetic structure in the closed flux region. It is naturally understood that the direction of the poloidal magnetic field (toroidal current) is reversed in reversing the polarity of the bias flux from positive to negative. However, the poloidal current is surprisingly reversed in reversing the magnetic helicity polarity. The direction of the poloidal current is opposite in the each region. The toroidal flow is reversed, but a shear profile of the poloidal flow is not changed significantly. In this configuration, the diamagnetic structure appears in the closed flux region. Thus, not only Jt×Bp but also Jp×Bt force contributes on pressure balance leading to a higher beta. We are studying a more general helicity conservation that constrains the interaction between flows and magnetic fields and momentum transport in the two-fluid framework.

Reverse bias protected solar array with integrated bypass battery

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A (Inventor)

2012-01-01

A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

NASA Astrophysics Data System (ADS)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength

NASA Astrophysics Data System (ADS)

Joshi, Abhay; Datta, Shubhashish

2012-06-01

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 um. Each 100 um × 200 um large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 uA at 5 V reverse bias. Corresponding results for the 16-element array having 200 um × 200 um pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

PubMed

Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

2014-04-24

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Analysis of reverse gate leakage mechanism of AlGaN/GaN HEMTs with N2 plasma surface treatment

NASA Astrophysics Data System (ADS)

Liu, Hui; Zhang, Zongjing; Luo, Weijun

2018-06-01

The mechanism of reverse gate leakage current of AlGaN/GaN HEMTs with two different surface treatment methods are studied by using C-V, temperature dependent I-V and theoretical analysis. At the lower reverse bias region (VR >- 3.5 V), the dominant leakage current mechanism of the device with N2 plasma surface treatment is the Poole-Frenkel emission current (PF), and Trap-Assisted Tunneling current (TAT) is the principal leakage current of the device which treated by HCl:H2O solution. At the higher reverse bias region (VR <- 3.5 V), both of the two samples show good agreement with the surface leakage mechanism. The leakage current of the device with N2 plasma surface treatment is one order of magnitude smaller than the device which treated by HCl:H2O solution. This is due to the recovery of Ga-N bond in N2 plasma surface treatment together with the reduction of the shallow traps in post-gate annealing (PGA) process. The measured results agree well with the theoretical calculations and demonstrate N2 plasma surface treatment can reduce the reverse leakage current of the AlGaN/GaN HEMTs.

How light-harvesting semiconductors can alter the bias of reversible electrocatalysts in favor of H2 production and CO2 reduction.

PubMed

Bachmeier, Andreas; Wang, Vincent C C; Woolerton, Thomas W; Bell, Sophie; Fontecilla-Camps, Juan C; Can, Mehmet; Ragsdale, Stephen W; Chaudhary, Yatendra S; Armstrong, Fraser A

2013-10-09

The most efficient catalysts for solar fuel production should operate close to reversible potentials, yet possess a bias for the fuel-forming direction. Protein film electrochemical studies of Ni-containing carbon monoxide dehydrogenase and [NiFeSe]-hydrogenase, each a reversible electrocatalyst, show that the electronic state of the electrode strongly biases the direction of electrocatalysis of CO2/CO and H(+)/H2 interconversions. Attached to graphite electrodes, these enzymes show high activities for both oxidation and reduction, but there is a marked shift in bias, in favor of CO2 or H(+) reduction, when the respective enzymes are attached instead to n-type semiconductor electrodes constructed from CdS and TiO2 nanoparticles. This catalytic rectification effect can arise for a reversible electrocatalyst attached to a semiconductor electrode if the electrode transforms between semiconductor- and metallic-like behavior across the same narrow potential range (<0.25 V) that the electrocatalytic current switches between oxidation and reduction.

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

NASA Astrophysics Data System (ADS)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Development of reverse biased p-n junction electron emission

NASA Technical Reports Server (NTRS)

Fowler, P.; Muly, E. C.

1971-01-01

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

NASA Astrophysics Data System (ADS)

Maddox, S. J.; Sun, W.; Lu, Z.; Nair, H. P.; Campbell, J. C.; Bank, S. R.

2012-10-01

We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ˜80, at a record low reverse bias of 12 V.

Effect of threading defects on InGaN /GaN multiple quantum well light emitting diodes

NASA Astrophysics Data System (ADS)

Ferdous, M. S.; Wang, X.; Fairchild, M. N.; Hersee, S. D.

2007-12-01

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1×107-2×108cm-2.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias.

PubMed

Stefanov, Konstantin D; Clarke, Andrew S; Ivory, James; Holland, Andrew D

2018-01-03

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths.

Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias †

PubMed Central

Clarke, Andrew S.; Ivory, James; Holland, Andrew D.

2018-01-01

A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be fully depleted. The first prototypes have been manufactured on an 18 µm thick, 1000 Ω·cm epitaxial silicon wafers using 180 nm PPD image sensor process. Both front-side illuminated (FSI) and back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v. The characterization results from a number of arrays of 10 µm and 5.4 µm PPD pixels, with different shape, the size and the depth of the new implant are in good agreement with device simulations. The new pixels could be reverse-biased without parasitic leakage currents well beyond full depletion, and demonstrate nearly identical optical response to the reference non-modified pixels. The observed excessive charge sharing in some pixel variants is shown to not be a limiting factor in operation. This development promises to realize monolithic PPD CIS with large depleted thickness and correspondingly high quantum efficiency at near-infrared and soft X-ray wavelengths. PMID:29301379

Reversal of Thermoelectric Current in Tubular Nanowires

NASA Astrophysics Data System (ADS)

Erlingsson, Sigurdur I.; Manolescu, Andrei; Nemnes, George Alexandru; Bardarson, Jens H.; Sanchez, David

2017-07-01

We calculate the charge current generated by a temperature bias between the two ends of a tubular nanowire. We show that in the presence of a transversal magnetic field the current can change sign; i.e., electrons can either flow from the hot to the cold reservoir, or in the opposite direction, when the temperature bias increases. This behavior occurs when the magnetic field is sufficiently strong, such that Landau and snaking states are created, and the energy dispersion is nonmonotonic with respect to the longitudinal wave vector. The sign reversal can survive in the presence of impurities. We predict this result for core-shell nanowires, for uniform nanowires with surface states due to the Fermi level pinning, and for topological insulator nanowires.

Dc and ac electrical response of MOCVD grown GaN in p-i-n structure, assessed through I-V and admittance measurement

NASA Astrophysics Data System (ADS)

Ayarcı Kuruoğlu, Neslihan; Özdemir, Orhan; Bozkurt, Kutsal; Sundaram, Suresh; Salvestrini, Jean-Paul; Ougazzaden, Abdallah; Gaimard, Quentin; Belahsene, Sofiane; Merghem, Kamel; Ramdane, Abderrahim

2017-12-01

The electrical response of gallium nitride (GaN), produced through metal-organic chemical vapor deposition in a p-i-n structure was investigated through temperature-dependent current-voltage (I-V) and admittance measurement. The I-V curves showed double diode behavior together with several distinct regions in which trap-assisted tunnelling current has been identified at low and moderate forward/reverse direction and space charge limited current (SCLC) at large forward/reverse bias. The value of extracted energy (˜200 meV in forward and  ˜70 meV in reverse direction) marked the tunnelling entity as electron and heavy hole in the present structure. These values were also obtained in space charge limited regime and considered as minority carriers which might originate the experimentally observed negative capacitance issue at low frequencies over the junction under both forward and reverse bias directions. Analytically derived expression for the admittance in the revised versions of SCLC model was also applied to explain the inductance effect, yielding good fits to the experimentally measured admittance data.

Electrical current mediated interconversion between graphene oxide to reduced grapene oxide

NASA Astrophysics Data System (ADS)

Teoh, H. F.; Tao, Y.; Tok, E. S.; Ho, G. W.; Sow, C. H.

2011-04-01

In this work, we demonstrate that graphene oxide (GO) can be reversibly converted to reduced-graphene-oxide (rGO) through the use of electric current. Strong electric field could cause ionization of water molecules in air to generate H+ ions at cathode, causing GO to be reduced. When the bias is reversed, the same electrode becomes positive and OH- ions are produced. According to Le Chatelier Principle, it then favors the reverse reaction, converting rGO back to GO, GO+2H++2e-=>rGO+H2O. X-ray spectroscopy and Raman spectroscopy were carried to verify the conversion reversibility in the reversed process.

A 13.56 MHz CMOS Active Rectifier With Switched-Offset and Compensated Biasing for Biomedical Wireless Power Transfer Systems.

PubMed

Yan Lu; Wing-Hung Ki

2014-06-01

A full-wave active rectifier switching at 13.56 MHz with compensated bias current for a wide input range for wirelessly powered high-current biomedical implants is presented. The four diodes of a conventional passive rectifier are replaced by two cross-coupled PMOS transistors and two comparator- controlled NMOS switches to eliminate diode voltage drops such that high voltage conversion ratio and power conversion efficiency could be achieved even at low AC input amplitude |VAC|. The comparators are implemented with switched-offset biasing to compensate for the delays of active diodes and to eliminate multiple pulsing and reverse current. The proposed rectifier uses a modified CMOS peaking current source with bias current that is quasi-inversely proportional to the supply voltage to better control the reverse current over a wide AC input range (1.5 to 4 V). The rectifier was fabricated in a standard 0.35 μm CMOS N-well process with active area of 0.0651 mm(2). For the proposed rectifier measured at |VAC| = 3.0 V, the voltage conversion ratios are 0.89 and 0.93 for RL=500 Ω and 5 kΩ, respectively, and the measured power conversion efficiencies are 82.2% to 90.1% with |VAC| ranges from 1.5 to 4 V for RL=500 Ω.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asubay, Sezai; Durap, Feyyaz; Aydemir, Murat

An organic-inorganic junction was fabricated by forming [Ru(Cy{sub 2}PNHCH{sub 2}-C{sub 4}H{sub 3}O)(η{sup 6}-p-cymene)Cl{sub 2}] complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. It was seen that the structure had perfect rectification property. Current-voltage (I-V) measurements were carried out in dark and under various illumination conditions (between 50-100 mW/cm{sup 2}) and with the temperature range from 303 to 380 K. The structure showed unusually forward and reverse bias temperature and light sensing behaviors. It was seen that the current both in forward and reverse bias increased with the increase in light intensity and temperature.

Microscale localization and isolation of light emitting imperfections in monocrystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Gajdoš, Adam; Škvarenina, Lubomír.; Škarvada, Pavel; Macků, Robert

2017-12-01

An imperfections or defects may appear in fabricated monocrystalline solar cells. These microstructural imperfections could have impact on the parameters of whole solar cell. The research is divided into two parts, firstly, the detection and localization defects by using several techniques including current-voltage measurement, scanning probe microscopy (SPM), scanning electron microscope (SEM) and electroluminescence. Secondly, the defects isolation by a focused ion beam (FIB) milling and impact of a milling process on solar cells. The defect detection is realized by I-V measurement under reverse biased sample. For purpose of localization, advantage of the fact that defects or imperfections in silicon solar cells emit the visible and near infrared electroluminescence under reverse biased voltage is taken, and CCD camera measurement for macroscopic localization of these spots is applied. After rough macroscopic localization, microscopic localization by scanning probe microscopy combined with a photomultiplier (shadow mapping) is performed. Defect isolation is performed by a SEM equipped with the FIB instrument. FIB uses a beam of gallium ions which modifies crystal structure of a material and may affect parameters of solar cell. As a result, it is interesting that current in reverse biased sample with isolated defect is smaller approximately by 2 orders than current before isolation process.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gohil, T.; Whale, J.; Lioliou, G.; Novikov, S. V.; Foxon, C. T.; Kent, A. J.; Barnett, A. M.

2016-07-01

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At -5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm-2 and (189.0 ± 0.2) mA cm-2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE PAGES

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.; ...

2017-03-01

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

1998-01-01

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

NASA Astrophysics Data System (ADS)

Hahn, L.; Fuchs, F.; Kirste, L.; Driad, R.; Rutz, F.; Passow, T.; Köhler, K.; Rehm, R.; Ambacher, O.

2018-04-01

AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30 V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 μm exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84 V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V.

High rectifying behavior in Al/Si nanocrystal-embedded SiOxNy/p-Si heterojunctions

NASA Astrophysics Data System (ADS)

Jacques, E.; Pichon, L.; Debieu, O.; Gourbilleau, F.; Coulon, N.

2011-05-01

We examine the electrical properties of MIS devices made of Al/Si nanocrystal-SiOxNy/p-Si. The J-V characteristics of the devices present a high rectifying behavior. Temperature measurements show that the forward current is thermally activated following the thermal diffusion model of carriers. At low reverse bias, the current is governed by thermal emission amplified by the Poole-Frenkel effect of carriers from defects located at the silicon nanocrystals/SiOxNy interfaces, whereas tunnel conduction in silicon oxynitride matrix dominates at high reverse bias. The devices exhibit a rectification ratio >104 for the current measured at V = ± 1 V. Study reveals that thermal annealing in forming gas (H2/N2) improves the electrical properties of the devices due to the passivation of defects.

Amorphous-silicon module hot-spot testing

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1985-01-01

Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Identification and Analysis of Partial Shading Breakdown Sites in CuIn xGa (1-x)Se 2 Modules

DOE PAGES

Palmiotti, Elizabeth; Johnston, Steven; Gerber, Andreas; ...

2017-12-20

In this paper, CuIn xGa (1-x) (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailedmore » studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.« less

Chemical Visualization of a GaN p-n junction by XPS

PubMed Central

Caliskan, Deniz; Sezen, Hikmet; Ozbay, Ekmel; Suzer, Sefik

2015-01-01

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device. PMID:26359762

GaAs photoconductive semiconductor switch

DOEpatents

Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

1998-09-08

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

PubMed

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Thermoelectric current in topological insulator nanowires with impurities.

PubMed

Erlingsson, Sigurdur I; Bardarson, Jens H; Manolescu, Andrei

2018-01-01

In this paper we consider charge current generated by maintaining a temperature difference over a nanowire at zero voltage bias. For topological insulator nanowires in a perpendicular magnetic field the current can change sign as the temperature of one end is increased. Here we study how this thermoelectric current sign reversal depends on the magnetic field and how impurities affect the size of the thermoelectric current. We consider both scalar and magnetic impurities and show that their influence on the current are quite similar, although the magnetic impurities seem to be more effective in reducing the effect. For moderate impurity concentration the sign reversal persists.

Schottky barrier diode and method thereof

NASA Technical Reports Server (NTRS)

Aslam, Shahid (Inventor); Franz, David (Inventor)

2008-01-01

Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

Investigation of 1/f Noise Mechanisms in Midwave Infrared HgCdTe Gated Photodiodes

NASA Astrophysics Data System (ADS)

Westerhout, R. J.; Musca, C. A.; Antoszewski, J.; Dell, J. M.; Faraone, L.

2007-08-01

In this work, gated midwave infrared (MWIR) Hg1 x Cd x Te photodiodes are used to investigate the physical origin of 1/f noise generation. Gated photodiodes were fabricated on liquid-phase epitaxy p-type HgCdTe MWIR material with a vacancy-doped concentration of 1.6 × 1016 cm-3 and x = 0.31. CdTe was thermally deposited and used as both a passivant and a mask for the plasma-based type conversion, and ZnS was used as an insulator. Fabricated devices show a R 0 A of 1 5 × 104 Ωcm2 with zero gate bias. Application of 2 V to the gate improves the R 0 A by more than two orders of magnitude to 6.0 × 106 Ωcm2, which corresponds to the p-type surface being at transition between depletion and weak inversion. Trap-assisted tunneling (TAT) current was observed at negative gate biases and reverse junction biases. For gate biases greater than 3 V, a field-induced junction breakdown was observed. An I n = α I β f -0.5 trend was observed above 200 pA reverse bias dark current, with α = 3.5 × 10-5 and β = 0.82, which corresponds to the TAT dominated region. Below 200 pA, junction generation-recombination (GR) current starts to dominate and this previously mentioned trend is no longer observed. Junction GR current was not seen to be correlated with 1/f noise in these photodiodes.

Low dislocation density InAlN/AlN/GaN heterostructures grown on GaN substrates and the effects on gate leakage characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotani, Junji, E-mail: kotani.junji-01@jp.fujitsu.com; Yamada, Atsushi; Ishiguro, Tetsuro

2016-04-11

This paper reports on the electrical characterization of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures grown on low dislocation density free-standing GaN substrates. InAlN HEMT structures were grown on sapphire and GaN substrates by metal-organic vapor phase epitaxy, and the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes were investigated. Threading dislocation densities were determined to be 1.8 × 10{sup 4 }cm{sup −2} and 1.2 × 10{sup 9 }cm{sup −2} by the cathodoluminescence measurement for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples, andmore » a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe that the leakage current in the low bias region is governed by a dislocation-related Frenkel–Poole emission, and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer. Our results demonstrated that the reduction of dislocation density is effective in reducing leakage current in the low bias region. At the same time, it was also revealed that another approach will be needed, for instance, band modulation by impurity doping and insertion of insulating layers beneath the gate electrodes for a substantial reduction of the gate leakage current.« less

Reverse bias voltage testing of 8 cm x 8cm silicon solar cells

NASA Technical Reports Server (NTRS)

Woike, T.; Stotlar, S.; Lungu, C.

1991-01-01

A study is described of the reverse I-V characteristics of the largest space qualified silicon solar cells currently available (8 x 8 cm) and of reverse bias voltage (RBV) testing performed on these cells. This study includes production grade cells, both with and without cover glass. These cells span the typical output range seen in production. Initial characteristics of these cells are measured at both 28 and 60 C. These measurements show weak correlation between cell output and reverse characteristics. Analysis is presented to determine the proper conditions for RBV stress to simulate shadowing effects on a particular array design. After performing the RBV stress the characteristics of the stressed cells are remeasured. The degradation in cell performance is highly variable which exacerbates cell mismatching over time. The effect of this degradation on array lifetime is also discussed. Generalization of these results to other array configurations is also presented.

Monolithically integrated Si gate-controlled light-emitting device: science and properties

NASA Astrophysics Data System (ADS)

Xu, Kaikai

2018-02-01

The motivation of this study is to develop a p-n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.

Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teii, K., E-mail: teii@asem.kyushu-u.ac.jp; Ito, H.; Katayama, N.

2015-02-07

Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation ofmore » the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.« less

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

NASA Astrophysics Data System (ADS)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Design and fabrication of low power GaAs/AlAs resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Md Zawawi, Mohamad Adzhar; Missous, Mohamed

2017-12-01

A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28 V (0.53 V) in forward (reverse) direction. The peak current density in forward bias is around 15.4 kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8 kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

NASA Technical Reports Server (NTRS)

Kachare, R.; Anspaugh, B. E.; Garlick, G. F. J.

1988-01-01

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

NASA Astrophysics Data System (ADS)

Lang, A. C.; Hart, J. L.; Wen, J. G.; Miller, D. J.; Meyer, D. J.; Taheri, M. L.

2016-09-01

Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

Shunt-Enhanced, Lead-Driven Bifurcation of Epilayer GaAs based EEC Sensor Responsivity

NASA Astrophysics Data System (ADS)

Solin, Stuart; Werner, Fletcher

2015-03-01

The results reported here explore the geometric optimization of room-temperature EEC sensor responsivity to applied bias by exploring contact geometry and location. The EEC sensor structure resembles that of a MESFET, but the measurement technique and operation distinguish the EEC sensor significantly; the EEC sensor employs a four-point resistance measurement as opposed to a two-point source-drain measurement and is operated under both forward and reverse bias. Under direct forward bias, the sensor distinguishes itself from a traditional FET by allowing current to be injected from the gate, referred to as a shunt, into the active layer. We show that the observed bifurcation in EEC sensor response to direct reverse bias depends critically on measurement lead location. A dramatic enhancement in responsivity is achieved via a modification of the shunt geometry. A maximum percent change of 130,856% of the four-point resistance was achieved under a direct reverse bias of -1V using an enhanced shunt design, a 325 fold increase over the conventional EEC square shunt design. This result was accompanied by an observed bifurcation in sensor response, driven by a rotation of the four-point measurement leads. S. A. S is a co-founder of and has a financial interest in PixelEXX, a start-up company whose mission is to market imaging arrays.

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

NASA Technical Reports Server (NTRS)

Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

2007-01-01

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Universal Strategy To Reduce Noise Current for Sensitive Organic Photodetectors.

PubMed

Xiong, Sixing; Li, Lingliang; Qin, Fei; Mao, Lin; Luo, Bangwu; Jiang, Youyu; Li, Zaifang; Huang, Jinsong; Zhou, Yinhua

2017-03-15

Low noise current is critical for achieving high-detectivity organic photodetectors. Inserting charge-blocking layers is an effective approach to suppress the reverse-biased dark current. However, in solution-processed organic photodetectors, the charge-transport material needs to be dissolved in solvents that do not dissolve the underneath light-absorbing layer, which is not always possible for all kinds of light-absorbing materials developed. Here, we introduce a universal strategy of transfer-printing a conjugated polymer, poly(3-hexylthiophene) (P3HT), as the electron-blocking layer to realize highly sensitive photodetectors. The transfer-printed P3HT layers substantially and universally reduced the reverse-biased dark current by about 3 orders of magnitude for various photodetectors with different active layers. These photodetectors can detect the light signal as weak as several picowatts per square centimeter, and the device detectivity is over 10 12 Jones. The results suggest that the strategy of transfer-printing P3HT films as the electron-blocking layer is universal and effective for the fabrication of sensitive organic photodetectors.

Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

PubMed

Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

2014-11-01

The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

Characterisation of a novel reverse-biased PPD CMOS image sensor

NASA Astrophysics Data System (ADS)

Stefanov, K. D.; Clarke, A. S.; Ivory, J.; Holland, A. D.

2017-11-01

A new pinned photodiode (PPD) CMOS image sensor (CIS) has been developed and characterised. The sensor can be fully depleted by means of reverse bias applied to the substrate, and the principle of operation is applicable to very thick sensitive volumes. Additional n-type implants under the pixel p-wells, called Deep Depletion Extension (DDE), have been added in order to eliminate the large parasitic substrate current that would otherwise be present in a normal device. The first prototype has been manufactured on a 18 μm thick, 1000 Ω .cm epitaxial silicon wafers using 180 nm PPD image sensor process at TowerJazz Semiconductor. The chip contains arrays of 10 μm and 5.4 μm pixels, with variations of the shape, size and the depth of the DDE implant. Back-side illuminated (BSI) devices were manufactured in collaboration with Teledyne e2v, and characterised together with the front-side illuminated (FSI) variants. The presented results show that the devices could be reverse-biased without parasitic leakage currents, in good agreement with simulations. The new 10 μm pixels in both BSI and FSI variants exhibit nearly identical photo response to the reference non-modified pixels, as characterised with the photon transfer curve. Different techniques were used to measure the depletion depth in FSI and BSI chips, and the results are consistent with the expected full depletion.

Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

PubMed

Zhang, Zhengzhong; Jiang, Liang

2014-09-12

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perron, Justin K., E-mail: jperron@csusm.edu; Joint Quantum Institute, National Institute of Standards and Technology, Gaithersburg, Maryland 20899; National Institute of Standards and Technology, Gaithersburg, Maryland 20899

Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper, we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward (1, 1) → (0, 2) tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured inmore » the forward and reverse biasing directions as a function of B. At higher fields, we predict a crossover to “reverse PSB” in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0, 2) charge configuration. In Si quantum dots, these fields are experimentally accessible; thus, this work suggests a way to observe a crossover in magnetic field to qualitatively different behavior.« less

Research on injury compensation and health outcomes: ignoring the problem of reverse causality led to a biased conclusion.

PubMed

Spearing, Natalie M; Connelly, Luke B; Nghiem, Hong S; Pobereskin, Louis

2012-11-01

This study highlights the serious consequences of ignoring reverse causality bias in studies on compensation-related factors and health outcomes and demonstrates a technique for resolving this problem of observational data. Data from an English longitudinal study on factors, including claims for compensation, associated with recovery from neck pain (whiplash) after rear-end collisions are used to demonstrate the potential for reverse causality bias. Although it is commonly believed that claiming compensation leads to worse recovery, it is also possible that poor recovery may lead to compensation claims--a point that is seldom considered and never addressed empirically. This pedagogical study compares the association between compensation claiming and recovery when reverse causality bias is ignored and when it is addressed, controlling for the same observable factors. When reverse causality is ignored, claimants appear to have a worse recovery than nonclaimants; however, when reverse causality bias is addressed, claiming compensation appears to have a beneficial effect on recovery, ceteris paribus. To avert biased policy and judicial decisions that might inadvertently disadvantage people with compensable injuries, there is an urgent need for researchers to address reverse causality bias in studies on compensation-related factors and health. Copyright © 2012 Elsevier Inc. All rights reserved.

Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yagi, Mamiko; Ito, Mitsuki; Shirakashi, Jun-ichi, E-mail: shrakash@cc.tuat.ac.jp

We report a new method for fabrication of Ni nanogaps based on electromigration induced by a field emission current. This method is called “activation” and is demonstrated here using a current source with alternately reversing polarities. The activation procedure with alternating current bias, in which the current source polarity alternates between positive and negative bias conditions, is performed with planar Ni nanogaps defined on SiO{sub 2}/Si substrates at room temperature. During negative biasing, a Fowler-Nordheim field emission current flows from the source (cathode) to the drain (anode) electrode. The Ni atoms at the tip of the drain electrode are thusmore » activated and then migrate across the gap from the drain to the source electrode. In contrast, in the positive bias case, the field emission current moves the activated atoms from the source to the drain electrode. These two procedures are repeated until the tunnel resistance of the nanogaps is successively reduced from 100 TΩ to 48 kΩ. Scanning electron microscopy and atomic force microscopy studies showed that the gap separation narrowed from approximately 95 nm to less than 10 nm because of the Ni atoms that accumulated at the tips of both the source and drain electrodes. These results show that the alternately biased activation process, which is a newly proposed atom transfer technique, can successfully control the tunnel resistance of the Ni nanogaps and is a suitable method for formation of ultrasmall nanogap structures.« less

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

NASA Astrophysics Data System (ADS)

Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi; Nagamatsu, Kentaro; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi; Sugawara, Yoshihiro; Yao, Yong-Zhao; Ishikawa, Yukari

2018-04-01

Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.

Heat current through an artificial Kondo impurity beyond linear response

NASA Astrophysics Data System (ADS)

Sierra, Miguel A.; Sánchez, David

2018-03-01

We investigate the heat current of a strongly interacting quantum dot in the presence of a voltage bias in the Kondo regime. Using the slave-boson mean-field theory, we discuss the behavior of the energy flow and the Joule heating. We find that both contributions to the heat current display interesting symmetry properties under reversal of the applied dc bias. We show that the symmetries arise from the behavior of the dot transmission function. Importantly, the transmission probability is a function of both energy and voltage. This allows us to analyze the heat current in the nonlinear regime of transport. We observe that nonlinearities appear already for voltages smaller than the Kondo temperature. Finally, we suggest to use the contact and electric symmetry coefficients as a way to measure pure energy currents.

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Chunyan; Department of Chemistry, Huzhou University, Zhejiang, Huzhou 313000; Zhu, Chen

2015-04-06

We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host viamore » defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.« less

Realizing broad-bandwidth visible wavelength photodiode based on solution-processed ZnPc/PC71BM dyad

NASA Astrophysics Data System (ADS)

Zafar, Qayyum; Fatima, Noshin; Karimov, Khasan S.; Ahmed, Muhammad M.; Sulaiman, Khaulah

2017-02-01

Herein, we demonstrate a solution-processed visible wavelength organic photodiode (OPD) using donor/acceptor dyad of zinc phthalocyanine (ZnPc) and [6,6]-phenyl-C71-butyric-acid methyl ester (PC71BM), respectively. The synergic absorption profiles of both ZnPc and PC71BM moieties have been exploited to realize broader (350 and 800 nm) and consistent absorption spectrum of the photoactive film. The optimum loading ratio (by volume) of D/A dyad has been estimated to be 1:0.8, via quenching phenomenon in ZnPc photoluminescence spectrum. The performance of the OPD has been evaluated by detecting the photocurrent density with respect to varied illumination levels (0-150 mW/cm2) of impinging light at different reverse bias conditions. Under identical reverse bias mode, the photocurrent density has shown significant upsurge as the incident intensity of light is increased; ultimately leading to the significantly higher responsivity (162.4 μA/W) of the fabricated diode. The light to dark current density ratio (Jph/Jd) of the device at 3 V reverse bias has been calculated to be ∼20.12. The transient photocurrent density response of the fabricated OPD has also been characterized at -4 V operational bias under switch ON/OFF illumination. The measured response and recovery time for the fabricated OPD are ∼200 and 300 ms, respectively.

Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes.

PubMed

Bessire, Cedric D; Björk, Mikael T; Schmid, Heinz; Schenk, Andreas; Reuter, Kathleen B; Riel, Heike

2011-10-12

We report on the electrical characterization of one-sided p(+)-si/n-InAs nanowire heterojunction tunnel diodes to provide insight into the tunnel process occurring in this highly lattice mismatched material system. The lattice mismatch gives rise to dislocations at the interface as confirmed by electron microscopy. Despite this, a negative differential resistance with peak-to-valley current ratios of up to 2.4 at room temperature and with large current densities is observed, attesting to the very abrupt and high-quality interface. The presence of dislocations and other defects that increase the excess current is evident in the first and second derivative of the I-V characteristics as distinct peaks arising from trap-and phonon-assisted tunneling via the corresponding defect levels. We observe this assisted tunneling mainly in the forward direction and at low reverse bias but not at higher reverse biases because the band-to-band generation rates are peaked in the InAs, which is also confirmed by modeling. This indicates that most of the peaks are due to dislocations and defects in the immediate vicinity of the interface. Finally, we also demonstrate that these devices are very sensitive to electrical stress, in particular at room temperature, because of the extremely high electrical fields obtained at the abrupt junction even at low bias. The electrical stress induces additional defect levels in the band gap, which reduce the peak-to-valley current ratios.

Superconducting analog-to-digital converter with a triple-junction reversible flip-flop bidirectional counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, G.S.

1993-07-13

A high-performance superconducting analog-to-digital converter is described, comprising: a bidirectional binary counter having n stages of triple-junction reversible flip-flops connected together in a cascade arrangement from the least significant bit (LSB) to the most significant bit (MSB) where n is the number of bits of the digital output, each triple-junction reversible flip-flop including first, second and third shunted Josephson tunnel junctions and a superconducting inductor connected in a bridge circuit, the Josephson junctions and the inductor forming upper and lower portions of the flip-flop, each reversible flip-flop being a bistable logic circuit in which the direction of the circulating currentmore » determines the state of the circuit; and means for applying an analog input current to the bidirectional counter; wherein the bidirectional counter algebraically counts incremental changes in the analog input current, increasing the binary count for positive incremental changes in the analog current and decreasing the binary count for negative incremental changes in the current, and wherein the counter does not require a gate bias, thus minimizing power dissipation.« less

Influence of reverse bias on the LEDs properties used as photo-detectors in VLC systems

NASA Astrophysics Data System (ADS)

Kowalczyk, Marcin; Siuzdak, Jerzy

2015-09-01

Continuous increasing share of light emitting diodes (LEDs) in a lighting market, which we observe during the last couple years, opens new possibilities. Especially, when we talk about practical realization the concept of visible light communications (VLC), which gains on popularity recently. The VLC concept presupposes utilization of illumination systems for a purpose of data transmission. It means, the emitters, in this case the LEDs, will not of a light source only, but also the data transmitters. Currently, most of the conducted researches in this area is concentrated on achievement of effective transmission methods. It means a transmission only in one direction. This is not enough, when we talk about the fully functional transmission system. Ensuring of feedback transmission channel is a necessary also. One of the ideas, which was postulated by authors of this article, is using for this purpose the LEDs in a double role. A utilization of LEDs as photo-detectors requires a reverse polarization, in contrast to a forward bias, which has a place when they work as light emitters. Ensuring of proper polarization get significant meaning. The article presents the investigations results on the influence of reverse bias on photo-receiving properties of LEDs used as light detectors. The conducted research proved that an improvement of sensitivity and bandwidth parameters are possible by application of appropriate value of the reverse voltage in a receiver.

Hot-spot heating susceptibility due to reverse bias operating conditions

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1985-01-01

Because of field experience (indicating that cell and module degradation could occur as a result of hot spot heating), a laboratory test was developed at JPL to determine hot spot susceptibility of modules. The initial hot spot testing work at JPL formed a foundation for the test development. Test parameters are selected as follows. For high shunt resistance cells, the applied back bias test current is set equal to the test cell current at maximum power. For low shunt resistance cells, the test current is set equal to the cell short circuit current. The shadow level is selected to conform to that which would lead to maximum back bias voltage under the appropriate test current level. The test voltage is determined by the bypass diode frequency. The test conditions are meant to simulate the thermal boundary conditions for 100 mW/sq cm, 40C ambient environment. The test lasts 100 hours. A key assumption made during the development of the test is that no current imbalance results from the connecting of multiparallel cell strings. Therefore, the test as originally developed was applicable for single string case only.

Enhanced model of photovoltaic cell/panel/array considering the direct and reverse modes

NASA Astrophysics Data System (ADS)

Zegaoui, Abdallah; Boutoubat, Mohamed; Sawicki, Jean-Paul; Kessaissia, Fatma Zohra; Djahbar, Abdelkader; Aillerie, Michel

2018-05-01

This paper presents an improved generalized physical model for photovoltaic, PV cells, panels and arrays taking into account the behavior of these devices when considering their biasing existing in direct and reverse modes. Existing PV physical models generally are very efficient for simulating influence of irradiation changes on the short circuit current but they could not visualize the influences of temperature changes. The Enhanced Direct and Reverse Mode model, named EDRM model, enlightens the influence on the short-circuit current of both temperature and irradiation in the reverse mode of the considered PV devices. Due to its easy implementation, the proposed model can be a useful power tool for the development of new photovoltaic systems taking into account and in a more exhaustive manner, environmental conditions. The developed model was tested on a marketed PV panel and it gives a satisfactory results compared with parameters given in the manufacturer datasheet.

Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Silicon nanowire Esaki diodes.

PubMed

Schmid, Heinz; Bessire, Cedric; Björk, Mikael T; Schenk, Andreas; Riel, Heike

2012-02-08

We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up to 4.3, and reverse current densities of up to 300 kA/cm(2) at 0.5 V reverse bias. Strain-dependent current-voltage (I-V) measurements exhibit a decrease of the peak tunnel current with uniaxial tensile stress and an increase of 48% for 1.3 GPa compressive stress along the <111> growth direction, revealing the strain dependence of the Si band structure and thus the tunnel barrier. The contributions of phonons to the indirect tunneling process were probed by conductance measurements at 4.2 K. These measurements show phonon peaks at energies corresponding to the transverse acoustical and transverse optical phonons. In addition, the low-temperature conductance measurements were extended to higher biases to identify potential impurity states in the band gap. The results demonstrate that the most likely impurity, namely, Au from the catalyst particle, is not detectable, a finding that is also supported by the excellent device properties of the Esaki diodes reported here. © 2012 American Chemical Society

Novel semiconducting boron carbide/pyridine polymers for neutron detection at zero bias

NASA Astrophysics Data System (ADS)

Echeverría, Elena; James, Robinson; Chiluwal, Umesh; Pasquale, Frank L.; Colón Santana, Juan A.; Gapfizi, Richard; Tae, Jae-Do; Driver, M. Sky; Enders, A.; Kelber, Jeffry A.; Dowben, P. A.

2015-01-01

Thin films containing aromatic pyridine moieties bonded to boron, in the partially dehydrogenated boron-rich icosahedra (B10C2HX), prove to be an effective material for neutron detection applications when deposited on n-doped (100) silicon substrates. The characteristic I-V curves for the heterojunction diodes exhibit strong rectification and largely unperturbed normalized reverse bias leakage currents with increasing pyridine content. The neutron capture generated pulses from these heterojunction diodes were obtained at zero bias voltage although without the signatures of complete electron-hole collection. These results suggest that modifications to boron carbide may result in better neutron voltaic materials.

Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets

NASA Astrophysics Data System (ADS)

Mativenga, Mallory; Kang, Dong Han; Lee, Ung Gi; Jang, Jin

2012-09-01

Bias instability of top-gate amorphous-indium-gallium-zinc-oxide thin-film transistors with source- and drain-offsets is reported. Positive and negative gate bias-stress (VG_STRESS) respectively induce reversible negative threshold-voltage shift (ΔVTH) and reduction in on-current. Migration of positive charges towards the offsets lowers the local resistance of the offsets, resulting in the abnormal negative ΔVTH under positive VG_STRESS. The reduction in on-current under negative VG_STRESS is due to increase in resistance of the offsets when positive charges migrate away from the offsets. Appropriate drain and source bias-stresses applied simultaneously with VG_STRESS either suppress or enhance the instability, verifying lateral ion migration to be the instability mechanism.

DC currents collected by a RF biased electrode quasi-parallel to the magnetic field

NASA Astrophysics Data System (ADS)

Faudot, E.; Devaux, S.; Moritz, J.; Bobkov, V.; Heuraux, S.

2017-10-01

Local plasma biasings due to RF sheaths close to ICRF antennas result mainly in a negative DC current collection on the antenna structure. In some specific cases, we may observe positive currents when the ion mobility (seen from the collecting surface) overcomes the electron one or/and when the collecting surface on the antenna side becomes larger than the other end of the flux tube connected to the wall. The typical configuration is when the antenna surface is almost parallel to the magnetic field lines and the other side perpendicular. To test the optimal case where the magnetic field is quasi-parallel to the electrode surface, one needs a linear magnetic configuration as our magnetized RF discharge experiment called Aline. The magnetic field angle is in our case lower than 1 relative to the RF biased surface. The DC current flowing through the discharge has been measured as a function of the magnetic field strength, neutral gas (He) pressure and RF power. The main result is the reversal of the DC current depending on the magnetic field, collision frequency and RF power level.

PN-type carrier-induced filter with modulatable extinction ratio.

PubMed

Fang, Qing; Tu, Xiaoguang; Song, Junfeng; Jia, Lianxi; Luo, Xianshu; Yang, Yan; Yu, Mingbin; Lo, Guoqiang

2014-12-01

We demonstrate the first PN-type carrier-induced silicon waveguide Bragg grating filter on a SOI wafer. The optical extinction ratio of this kind of filter can be efficiently modulated under both reverse and forward biases. The carrier-induced Bragg grating based on a PN junction is fabricated on the silicon waveguide using litho compensation technology. The measured optical bandwidth and the extinction ratio of the filter are 0.45 nm and 19 dB, respectively. The optical extinction ratio modulation under the reverse bias is more than 11.5 dB and it is more than 10 dB under the forward bias. Only 1-dB optical transmission loss is realized in this Bragg grating under a reverse bias. The shifting rates of the central wavelength under forward and reverse biases are ~-1.25 nm/V and 0.01 nm/V, respectively. The 3-dB modulation bandwidth of this filter is 5.1 GHz at a bias of -10 V.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes. Part 1; DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1998-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael

1999-01-01

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Y.; Chu, R.; Li, R.

2016-03-14

In a vertical GaN Schottky barrier diode, the free electron concentration n in the 6-μm-thick drift layer was found to greatly impact the diode reverse leakage current, which increased from 2.1 × 10{sup −7} A to 3.9 × 10{sup −4} A as n increased from 7.5 × 10{sup 14 }cm{sup −3} to 6.3 × 10{sup 15 }cm{sup −3} at a reverse bias of 100 V. By capping the drift layer with an ultrathin 5-nm graded AlGaN layer, reverse leakage was reduced by more than three orders of magnitude with the same n in the drift layer. We attribute this to the increased Schottky barrier height with the AlGaN at the surface. Meanwhile, themore » polarization field within the graded AlGaN effectively shortened the depletion depth, which led to the formation of tunneling current at a relatively small forward bias. The turn-on voltage in the vertical Schottky diodes was reduced from 0.77 V to 0.67 V—an advantage in reducing conduction loss in power switching applications.« less

Robust spin-current injection in lateral spin valves with two-terminal Co2FeSi spin injectors

NASA Astrophysics Data System (ADS)

Oki, S.; Kurokawa, T.; Honda, S.; Yamada, S.; Kanashima, T.; Itoh, H.; Hamaya, K.

2017-05-01

We demonstrate generation and detection of pure spin currents by combining a two-terminal spin-injection technique and Co2FeSi (CFS) spin injectors in lateral spin valves (LSVs). We find that the two-terminal spin injection with CFS has the robust dependence of the nonlocal spin signals on the applied bias currents, markedly superior to the four-terminal spin injection with permalloy reported previously. In our LSVs, since the spin transfer torque from one CFS injector to another CFS one is large, the nonlocal magnetoresistance with respect to applied magnetic fields shows large asymmetry in high bias-current conditions. For utilizing multi-terminal spin injection with CFS as a method for magnetization reversals, the terminal arrangement of CFS spin injectors should be taken into account.

The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R. M.; Kim, Jihyun; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Fitch, R. C.; Gillespie, J.; Dellmer, R.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2002-12-01

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc 2O 3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ⩾90% their initial drain-source current. The Sc 2O 3-passivated devices retained ˜80% recovery of the current under the same conditions.

Influence of interface inhomogeneities in thin-film Schottky diodes

NASA Astrophysics Data System (ADS)

Wilson, Joshua; Zhang, Jiawei; Li, Yunpeng; Wang, Yiming; Xin, Qian; Song, Aimin

2017-11-01

The scalability of thin-film transistors has been well documented, but there have been very few investigations into the effects of device scalability in Schottky diodes. Indium-gallium-zinc-oxide (IGZO) Schottky diodes were fabricated with IGZO thicknesses of 50, 150, and 250 nm. Despite the same IGZO-Pt interface and Schottky barrier being formed in all devices, reducing the IGZO thickness caused a dramatic deterioration of the current-voltage characteristics, most notably increasing the reverse current by nearly five orders of magnitude. Furthermore, the forward characteristics display an increase in the ideality factor and a reduction in the barrier height. The origins of this phenomenon have been elucidated using device simulations. First, when the semiconductor layer is fully depleted, the electric field increases with the reducing thickness, leading to an increased diffusion current. However, the effects of diffusion only offer a small contribution to the huge variations in reverse current seen in the experiments. To fully explain this effect, the role of inhomogeneities in the Schottky barrier height has been considered. Contributions from lower barrier regions (LBRs) are found to dominate the reverse current. The conduction band minimum below these LBRs is strongly dependent upon thickness and bias, leading to reverse current variations as large as several orders of magnitude. Finally, it is demonstrated that the thickness dependence of the reverse current is exacerbated as the magnitude of the inhomogeneities is increased and alleviated in the limit where the LBRs are large enough not to be influenced by the adjacent higher barrier regions.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Stimulus-driven attention, threat bias, and sad bias in youth with a history of an anxiety disorder or depression

PubMed Central

Sylvester, Chad M.; Hudziak, James J.; Gaffrey, Michael S.; Barch, Deanna M.; Luby, Joan L.

2015-01-01

Attention biases towards threatening and sad stimuli are associated with pediatric anxiety and depression, respectively. The basic cognitive mechanisms associated with attention biases in youth, however, remain unclear. Here, we tested the hypothesis that threat bias (selective attention for threatening versus neutral stimuli) but not sad bias relies on stimulus-driven attention. We collected measures of stimulus-driven attention, threat bias, sad bias, and current clinical symptoms in youth with a history of an anxiety disorder and/or depression (ANX/DEP; n=40) as well as healthy controls (HC; n=33). Stimulus-driven attention was measured with a non-emotional spatial orienting task, while threat bias and sad bias were measured at a short time interval (150 ms) with a spatial orienting task using emotional faces and at a longer time interval (500 ms) using a dot-probe task. In ANX/DEP but not HC, early attention bias towards threat was negatively correlated with later attention bias to threat, suggesting that early threat vigilance was associated with later threat avoidance. Across all subjects, stimulus-driven orienting was not correlated with early threat bias but was negatively correlated with later threat bias, indicating that rapid stimulus-driven orienting is linked to later threat avoidance. No parallel relationships were detected for sad bias. Current symptoms of depression but not anxiety were related to decreased stimulus-driven attention. Together, these results are consistent with the hypothesis that threat bias but not sad bias relies on stimulus-driven attention. These results inform the design of attention bias modification programs that aim to reverse threat biases and reduce symptoms associated with pediatric anxiety and depression. PMID:25702927

Stimulus-Driven Attention, Threat Bias, and Sad Bias in Youth with a History of an Anxiety Disorder or Depression.

PubMed

Sylvester, Chad M; Hudziak, James J; Gaffrey, Michael S; Barch, Deanna M; Luby, Joan L

2016-02-01

Attention biases towards threatening and sad stimuli are associated with pediatric anxiety and depression, respectively. The basic cognitive mechanisms associated with attention biases in youth, however, remain unclear. Here, we tested the hypothesis that threat bias (selective attention for threatening versus neutral stimuli) but not sad bias relies on stimulus-driven attention. We collected measures of stimulus-driven attention, threat bias, sad bias, and current clinical symptoms in youth with a history of an anxiety disorder and/or depression (ANX/DEP; n = 40) as well as healthy controls (HC; n = 33). Stimulus-driven attention was measured with a non-emotional spatial orienting task, while threat bias and sad bias were measured at a short time interval (150 ms) with a spatial orienting task using emotional faces and at a longer time interval (500 ms) using a dot-probe task. In ANX/DEP but not HC, early attention bias towards threat was negatively correlated with later attention bias to threat, suggesting that early threat vigilance was associated with later threat avoidance. Across all subjects, stimulus-driven orienting was not correlated with early threat bias but was negatively correlated with later threat bias, indicating that rapid stimulus-driven orienting is linked to later threat avoidance. No parallel relationships were detected for sad bias. Current symptoms of depression but not anxiety were related to decreased stimulus-driven attention. Together, these results are consistent with the hypothesis that threat bias but not sad bias relies on stimulus-driven attention. These results inform the design of attention bias modification programs that aim to reverse threat biases and reduce symptoms associated with pediatric anxiety and depression.

Preparation of TNAs/NiO p-n heterojunction and their applications in UV photosensor

NASA Astrophysics Data System (ADS)

Yusoff, M. M.; Mamat, M. H.; Malek, M. F.; Abdullah, M. A. R.; Ismail, A. S.; Saidi, S. A.; Mohamed, R.; Suriani, A. B.; Khusaimi, Z.; Rusop, M.

2018-05-01

A nanocomposite consisted of n-type titanium dioxide (TiO2) nanorod arrays (TNAs) and p-type nickel oxide (NiO) were deposited using a novel facile low-temperature aqueous chemical route (ACR) in a Schott bottle with cap clamps and sol-gel spin coating method, respectively on a transparent conductive oxide (TCO) glass substrate for the application of ultraviolet (UV) photosensor. The p-n heterojunction photosensor exhibited an increase in photocurrent under UV light (365 nm, 750 µW/cm2) at applied reverse bias. The measured UV response also revealed an increase in photocurrent, and dark current with increasing applied reverse bias on the p-n heterojunction. In this study, the fabricated TNAs/NiO composite nanostructures showed potential applications for photosensor based on the steady photocurrent results obtained under UV irradiation

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

Degradation of Leakage Currents in Solid Tantalum Capacitors Under Steady-State Bias Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2010-01-01

Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 oC to 170 oC and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes.

PubMed

Wu, Zhenghui; Yao, Weichuan; London, Alexander E; Azoulay, Jason D; Ng, Tse Nga

2017-01-18

Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with a near-infrared absorption edge at 1.2 μm, achieving a detectivity up to 10 12 Jones at a wavelength of 1 μm and an excellent linear dynamic range of 86 dB. The photodiode detectivity is maximized by operating at zero bias to suppress dark current, while a thin 175 nm active layer is used to facilitate charge collection without reverse bias. Analysis of the temperature dependence of the dark current and spectral response demonstrates a 2.8-fold increase in detectivity as the temperature was lowered from 44 to -12 °C, a relatively small change when compared to that of inorganic-based devices. The near-infrared photodiode shows a switching speed reaching up to 120 μs without an external bias. An application using our NIR photodiode to detect arterial pulses of a fingertip is demonstrated.

Stability of the mode-locking regime in tapered quantum-dot lasers

NASA Astrophysics Data System (ADS)

Bardella, P.; Drzewietzki, L.; Rossetti, M.; Weber, C.; Breuer, S.

2018-02-01

We study numerically and experimentally the role of the injection current and reverse bias voltage on the pulse stability of tapered, passively mode-locked, Quantum Dot (QD) lasers. By using a multi-section delayed differential equation and introducing in the model the QD inhomogenous broadening, we are able to predict the onset of leading and trailing edge instabilities in the emitted pulse trains and to identify specific trends of stability in dependence on the laser biasing conditions. The numerical results are confirmed experimentally trough amplitude and timing stability analysis of the pulses.

WDM Laser Sources for the Defense University (Testbed) Research Internet Program (DUTRIP)

DTIC Science & Technology

1999-01-31

for the dark conductivity of the photodiodes. Under reverse bias, the dark current noise has the 1 // character and obeys the Hooge relation with a~3...at 1 Hz) =7.3X 10~ 29 A2/Hz. At this bias the magnitude of the l/ f noise for frequencies above • 2146 J. Appl. Phys., Vol. 83, No. 4,15...improving the signal-to- noise . For Ortel transmitters, a penalty of order 1 -2 dB was typically observed. BER Property of Nortel Transmitter 980817- 1

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.

PubMed

Roy, Tania; Tosun, Mahmut; Cao, Xi; Fang, Hui; Lien, Der-Hsien; Zhao, Peida; Chen, Yu-Ze; Chueh, Yu-Lun; Guo, Jing; Javey, Ali

2015-02-24

Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in semiconductor vdW heterostructures with important implications toward the design of atomically thin tunnel transistors.

Mode control using two electrodes on HBT-EP

NASA Astrophysics Data System (ADS)

Stewart, I. G.; Brooks, J. W.; Levesque, J. P.; Mauel, M. E.; Navratil, G. A.

2017-10-01

Understanding the effects of plasma rotation on magnetohydrodynamic (MHD) modes and tokamak plasma stability is important for performance enhancement of current magnetic confinement experiments and to future fusion devices such as ITER. In order to control plasma rotation, two molybdenum electrodes have been installed on HBT-EP toroidally separated by 144 degrees. This allows independent biasing of the two probes both spatially and temporally. When the bias probes are inserted into the edge of the plasma and a voltage is applied, the probes drive radial currents and produce plasma flow from the torque induced by the currents. If the bias probe voltage is sufficiently positive, the MHD mode rotation transitions into a state with a rapid mode rotation frequency (in excess of 25 kHz) in the direction opposite to mode rotation without bias. The transition into this reversed rotation state occurs when the torque exceeds a threshold, which can depend upon the phase of an applied n = 1 error field. We present recent studies of the two-electrode system on mode rotation, mode stability, and the toroidal symmetry of the radial current through the scrape-off-layer (SOL) during MHD activity and applied magnetic perturbations. Supported by U.S. DOE Grant DE-FG02-86ER53222.

Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

NASA Astrophysics Data System (ADS)

Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

2017-07-01

Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

Barrier height modification and mechanism of carrier transport in Ni/in situ grown Si3N4/n-GaN Schottky contacts

NASA Astrophysics Data System (ADS)

Karpov, S. Y.; Zakheim, D. A.; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Brunkov, P. N.; Lundina, E. Y.; Tsatsulnikov, A. F.

2018-02-01

In situ growth of an ultra-thin (up to 2.5 nm) Si3N4 film on the top of n-GaN is shown to reduce remarkably the height of the barrier formed by deposition of Ni-based Schottky contact. The reduction is interpreted in terms of polarization dipole induced at the Si3N4/n-GaN interface and Fermi level pinning at the Ni/Si3N4 interface. Detailed study of temperature-dependent current-voltage characteristics enables identification of the electron transport mechanism in such Schottky diodes under forward bias: thermal/field electron emission over the barrier formed in n-GaN followed by tunneling through the Si3N4 film. At reverse bias and room temperature, the charge transfer is likely controlled by Poole-Frenkel ionization of deep traps in n-GaN. Tunneling exponents at forward and reverse biases and the height of the Ni/Si3N4 Schottky barrier are evaluated experimentally and compared with theoretical predictions.

Damage in Monolithic Thin-Film Photovoltaic Modules Due to Partial Shade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Mansfield, Lorelle; Repins, Ingrid

2016-09-01

The typical configuration of monolithic thin-film photovoltaic modules makes it possible for partial shade to place one or more cells in such a module in reverse bias. Reverse bias operation leads to high voltage, current density, and power density conditions, which can act as driving forces for failure. We showed that a brief outdoor shadow event can cause a 7% permanent loss in power. We applied an indoor partial shade durability test that moves beyond the standard hot spot endurance test by using more realistic mask and bias conditions and by carefully quantifying the permanent change in performance due tomore » the stress. With the addition of a pass criterion based on change in maximum power, this procedure will soon be proposed as a part of the module-type qualification test. All six commercial copper indium gallium diselenide and cadmium telluride modules we tested experienced permanent damage due to the indoor partial shade test, ranging from 4% to 14% loss in maximum power. We conclude by summarizing ways to mitigate partial shade stress at the cell, module, and system levels.« less

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

PubMed

Sandall, Ian; Ng, Jo Shien; David, John P R; Tan, Chee Hing; Wang, Ting; Liu, Huiyun

2012-05-07

The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the dark currents were two orders of magnitude lower than those reported for Ge on Si photodiodes. The diodes exhibited avalanche breakdown at 22 V reverse bias which is probably dominated by impact ionisation occurring in the GaAs and AlGaAs barrier layers. A red shift in the absorption peak of 61.2 meV was measured when the reverse bias was increased from 0 to 22 V, which we attributed to the quantum confined stark effect. This shift also leads to an increase in the responsivity at a fixed wavelength as the bias is increased, yielding a maximum increase in responsivity by a factor of 140 at the wavelength of 1365 nm, illustrating the potential for such a structure to be used as an optical modulator.

Fabrication and Benchmarking of a Stratix V FPGA with Monolithic Integrated Microfluidic Cooling

DTIC Science & Technology

2017-03-01

run. The output from all cores were monitored through the Altera Signaltap tool in order to detect glitches which occurred in the output...dependence on temperature, and static/ leakage power, which comes from several components, such as subthreshold leakage , gate leakage , and reverse bias 220...junction current. Subthreshold leakage current tends to be the most significant temperature dependent component of the power [6,7] and is given by

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

NASA Astrophysics Data System (ADS)

An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

2015-09-01

Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

Identification of a limiting mechanism in GaSb-rich superlattice midwave infrared detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delmas, Marie; Rodriguez, Jean-Baptiste; Rossignol, Rémi

2016-05-07

GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown material quality, is usually attributed to the presence of defects due to Ga-related bonds, limiting the SL carrier lifetime. By analyzing the photoresponse spectra of reverse-biased photodiodes at 80 K, we have highlighted the presence of an electric field, breaking the minibands into localized Wannier-Stark states. Besides the influence of defects in such GaSb-rich SL structures, this electric field induces a strong tunneling current at low bias which canmore » be the main limiting mechanism explaining the high dark current density of the GaSb-rich SL diode.« less

Sex-role reversal of a monogamous pipefish without higher potential reproductive rate in females.

PubMed

Sogabe, Atsushi; Yanagisawa, Yasunobu

2007-12-07

In monogamous animals, males are usually the predominant competitors for mates. However, a strictly monogamous pipefish Corythoichthys haematopterus exceptionally exhibits a reversed sex role. To understand why its sex role is reversed, we measured the adult sex ratio and the potential reproductive rate (PRR), two principal factors influencing the operational sex ratio (OSR), in a natural population of southern Japan. The adult sex ratio was biased towards females throughout the breeding season, but the PRR, which increased with water temperature, did not show sexual difference. We found that an alternative index of the OSR (Sf/Sm: sex ratio of 'time in') calculated from the monthly data was consistently biased towards females. The female-biased OSR associated with sex-role reversal has been reported in some polyandrous or promiscuous pipefish, but factors biasing the OSR differed between these pipefish and C. haematopterus. We concluded that the similar PRR between the sexes in C. haematopterus does not confer reproductive benefit of polygamous mating on either sex, resulting in strict monogamous mating, and its female-biased adult sex ratio promotes female-female competition for a mate, resulting in sex-role reversal.

Sexual selection on male size drives the evolution of male-biased sexual size dimorphism via the prolongation of male development.

PubMed

Rohner, Patrick T; Blanckenhorn, Wolf U; Puniamoorthy, Nalini

2016-06-01

Sexual size dimorphism (SSD) arises when the net effects of natural and sexual selection on body size differ between the sexes. Quantitative SSD variation between taxa is common, but directional intraspecific SSD reversals are rare. We combined micro- and macroevolutionary approaches to study geographic SSD variation in closely related black scavenger flies. Common garden experiments revealed stark intra- and interspecific variation: Sepsis biflexuosa is monomorphic across the Holarctic, while S. cynipsea (only in Europe) consistently exhibits female-biased SSD. Interestingly, S. neocynipsea displays contrasting SSD in Europe (females larger) and North America (males larger), a pattern opposite to the geographic reversal in SSD of S. punctum documented in a previous study. In accordance with the differential equilibrium model for the evolution of SSD, the intensity of sexual selection on male size varied between continents (weaker in Europe), whereas fecundity selection on female body size did not. Subsequent comparative analyses of 49 taxa documented at least six independent origins of male-biased SSD in Sepsidae, which is likely caused by sexual selection on male size and mediated by bimaturism. Therefore, reversals in SSD and the associated changes in larval development might be much more common and rapid and less constrained than currently assumed. © 2016 The Author(s). Evolution © 2016 The Society for the Study of Evolution.

Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zotova, N. V.; Karandashev, S. A.; Matveev, B. A., E-mail: Bmat@iropt3.ioffe.ru

Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening the current streamlines near the contacts. The influence of the potential barrier associated with the N-InAsSbP/n-InAs junction in double heterostructures on the differential resistance of diodes under zero bias, the value of the reverse current, and spreading of the forward current is discussed.

Romantic Relationship Status Biases Memory of Faces of Attractive Opposite-Sex Others: Evidence from a Reverse-Correlation Paradigm

ERIC Educational Resources Information Center

Karremans, Johan C.; Dotsch, Ron; Corneille, Olivier

2011-01-01

Previous research has demonstrated that, presumably as a way to protect one's current romantic relationship, individuals involved in a heterosexual romantic relationship tend to give lower attractiveness ratings to attractive opposite-sex others as compared to uninvolved individuals (i.e., the "derogation effect"). The present study importantly…

Verification of Fowler-Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC and n+ poly-Si/SiO2/n-4H SiC MOS devices by different models

NASA Astrophysics Data System (ADS)

Kodigala, Subba Ramaiah

2016-11-01

This article emphasizes verification of Fowler-Nordheim electron tunneling mechanism in the Ni/SiO2/n-4H SiC MOS devices by developing three different kinds of models. The standard semiconductor equations are categorically solved to obtain the change in Fermi energy level of semiconductor with effect of temperature and field that extend support to determine sustainable and accurate tunneling current through the oxide layer. The forward and reverse bias currents with variation of electric field are simulated with help of different models developed by us for MOS devices by applying adequate conditions. The latter is quite different from former in terms of tunneling mechanism in the MOS devices. The variation of barrier height with effect of quantum mechanical, temperature, and fields is considered as effective barrier height for the generation of current-field (J-F) curves under forward and reverse biases but quantum mechanical effect is void in the latter. In addition, the J-F curves are also simulated with variation of carrier concentration in the n-type 4H SiC semiconductor of MOS devices and the relation between them is established.

Temperature characteristics of silicon space solar cells and underlying parameters

NASA Technical Reports Server (NTRS)

Anspaugh, B. E.; Kachare, Ram; Garlick, G. F. J.

1987-01-01

Silicon space cells, 2 cm x 2 cm, with 10 ohm-cm p-base resistivity, 8-mil base thickness, and no back-surface fields have been investigated over the temperature range from 301 to 223 K by measurements of dark forward and reverse current-voltage characteristics and current-voltage relations under illumination. From dark forward bias data, the first and second diode saturation currents, I01 and I02, are determined and hence the base diffusion length and lifetime of minority carriers as functions of temperature. Lifetime increases exponentially with temperature and is explained by a Shockley-Read-Hall model with deep recombination levels 0.245 eV above the valence band. The I02 variation with temperature follows the Sah-Noyce-Shockley-Choo model except at low temperature where extra transitions raise the value above the predicted level. Reverse bias current at low voltage is a thermally assisted tunneling process via deep levels which are observed in base recombination at higher temperatures. The tunneling effects tend to become independent of temperature in the low-temperature region. These results demonstrate the ability to deduce basic parameters such as lifetime from simple measurements and show that back-surface fields offer no advantage at temperatures below 230 K. The analysis also explains the fall in lifetimes observed as the base conductivity increases, attributing it to native defects (perhaps carbon-oxygen-vacancy complexes) rather than the concentration of base dopant.

Temperature Dependence Of Current-Voltage Characteristics Of Au/p-GaAsN Schottky Barrier Diodes, With Small N Content

NASA Astrophysics Data System (ADS)

Rangel-Kuoppa, Victor-Tapio; Reentilä, Outi; Sopanen, Markku; Lipsanen, Harri

2011-12-01

The temperature dependent current-voltage (IVT) measurements on Au Schottky barrier diodes made on intrinsically p-type GaAs1-xNx were carried out. Three samples with small N content (x = 0.5%, 0.7% and 1%) were studied. The temperature range was 10-320 K. All contacts were found to be of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory show a strong temperature dependence. The current voltage (IV) curves are fitted based on the TE theory, yielding a zero-bias carrier height (ΦB0) and a ideality factor (n) that decrease and increase with decreasing temperature, respectively. The linear fitting of ΦB0 vs n and its subsequent evaluation for n = 1 give a zero-bias ΦB0 in the order of 0.35-0.4 eV. From the reverse-bias IV study, it is found that the experimental carrier density (NA) values increase with increasing temperature and are in agreement with the intrinsic carrier concentration for GaAs.

A different view on the Necker cube—Differences in multistable perception dynamics between Asperger and non-Asperger observers

PubMed Central

Wörner, Rike

2017-01-01

Background During observation of the Necker cube perception becomes unstable and alternates repeatedly between a from-above-perspective (“fap”) and a from-below-perspective (“fbp”) interpretation. Both interpretations are physically equally plausible, however, observers usually show an a priori top-down bias in favor of the fap interpretation. Patients with Autism spectrum disorder are known to show an altered pattern of perception with a focus on sensory details. In the present study we tested whether this altered perceptual processing affects their reversal dynamics and reduces the perceptual bias during Necker cube observation. Methods 19 participants with Asperger syndrome and 16 healthy controls observed a Necker cube stimulus continuously for 5 minutes and indicated perceptual reversals by key press. We compared reversal rates (number of reversals per minute) and the distributions of dwell times for the two interpretations between observer groups. Results Asperger participants showed less perceptual reversal than controls. Six Asperger participants did not perceive any reversal at all, whereas all observers from the control group perceived at least five reversals within the five minutes observation time. Further, control participants showed the typical perceptual bias with significant longer median dwell times for the fap compared to the fbp interpretation. No such perceptual bias was found in the Asperger group. Discussion The perceptual system weights the incomplete and ambiguous sensory input with memorized concepts in order to construct stable and reliable percepts. In the case of the Necker cube stimulus, two perceptual interpretations are equally compatible with the sensory information and internal fluctuations may cause perceptual alternations between them—with a slightly larger probability value for the fap interpretation (perceptual bias). Smaller reversal rates in Asperger observers may result from the dominance of bottom-up sensory input over endogenous top-down factors. The latter may also explain the absence of a fap bias. PMID:29244813

A different view on the Necker cube-Differences in multistable perception dynamics between Asperger and non-Asperger observers.

PubMed

Kornmeier, Jürgen; Wörner, Rike; Riedel, Andreas; Tebartz van Elst, Ludger

2017-01-01

During observation of the Necker cube perception becomes unstable and alternates repeatedly between a from-above-perspective ("fap") and a from-below-perspective ("fbp") interpretation. Both interpretations are physically equally plausible, however, observers usually show an a priori top-down bias in favor of the fap interpretation. Patients with Autism spectrum disorder are known to show an altered pattern of perception with a focus on sensory details. In the present study we tested whether this altered perceptual processing affects their reversal dynamics and reduces the perceptual bias during Necker cube observation. 19 participants with Asperger syndrome and 16 healthy controls observed a Necker cube stimulus continuously for 5 minutes and indicated perceptual reversals by key press. We compared reversal rates (number of reversals per minute) and the distributions of dwell times for the two interpretations between observer groups. Asperger participants showed less perceptual reversal than controls. Six Asperger participants did not perceive any reversal at all, whereas all observers from the control group perceived at least five reversals within the five minutes observation time. Further, control participants showed the typical perceptual bias with significant longer median dwell times for the fap compared to the fbp interpretation. No such perceptual bias was found in the Asperger group. The perceptual system weights the incomplete and ambiguous sensory input with memorized concepts in order to construct stable and reliable percepts. In the case of the Necker cube stimulus, two perceptual interpretations are equally compatible with the sensory information and internal fluctuations may cause perceptual alternations between them-with a slightly larger probability value for the fap interpretation (perceptual bias). Smaller reversal rates in Asperger observers may result from the dominance of bottom-up sensory input over endogenous top-down factors. The latter may also explain the absence of a fap bias.

Ventral striatum response during reward and punishment reversal learning in unmedicated major depressive disorder.

PubMed

Robinson, Oliver J; Cools, Roshan; Carlisi, Christina O; Sahakian, Barbara J; Drevets, Wayne C

2012-02-01

Affective biases may underlie many of the key symptoms of major depressive disorder, from anhedonia to altered cognitive performance. Understanding the cause of these biases is therefore critical in the quest for improved treatments. Depression is associated, for example, with a negative affective bias in reversal learning. However, despite the fact that reversal learning is associated with striatal response in healthy individuals and depressed individuals exhibit attenuated striatal function on multiple tasks, studies to date have not demonstrated striatal involvement in the negative bias in reversal learning in depression. In this study, the authors sought to determine whether this may be because reversal learning tasks conventionally used to study behavior examine reversals only on the basis of unexpected punishment and therefore do not adequately separate reward- and punishment-based behavior. The authors used functional MRI to compare the hemodynamic response to a reversal learning task with mixed reward- and punishment-based reversal stages between individuals with unmedicated major depressive disorder (N=13) and healthy comparison subjects (N=14). Impaired reward (but not punishment) reversal accuracy was found alongside attenuated anteroventral striatal response to unexpected reward in depression. Attenuated neurophysiological response of the anteroventral striatum may reflect dysfunction in circuits involving afferent projections from the orbitofrontal, limbic, and/or mesostriatal dopaminergic pathways, which conceivably may, together with the ventral striatum, underlie anhedonia in depression. Learning to appreciate and enjoy positive life experiences is critical for recovery from depression. This study pinpoints a neural target for such recovery.

Whiplash and the compensation hypothesis.

PubMed

Spearing, Natalie M; Connelly, Luke B

2011-12-01

Review article. To explain why the evidence that compensation-related factors lead to worse health outcomes is not compelling, either in general, or in the specific case of whiplash. There is a common view that compensation-related factors lead to worse health outcomes ("the compensation hypothesis"), despite the presence of important, and unresolved sources of bias. The empirical evidence on this question has ramifications for the design of compensation schemes. Using studies on whiplash, this article outlines the methodological problems that impede attempts to confirm or refute the compensation hypothesis. Compensation studies are prone to measurement bias, reverse causation bias, and selection bias. Errors in measurement are largely due to the latent nature of whiplash injuries and health itself, a lack of clarity over the unit of measurement (specific factors, or "compensation"), and a lack of appreciation for the heterogeneous qualities of compensation-related factors and schemes. There has been a failure to acknowledge and empirically address reverse causation bias, or the likelihood that poor health influences the decision to pursue compensation: it is unclear if compensation is a cause or a consequence of poor health, or both. Finally, unresolved selection bias (and hence, confounding) is evident in longitudinal studies and natural experiments. In both cases, between-group differences have not been addressed convincingly. The nature of the relationship between compensation-related factors and health is unclear. Current approaches to testing the compensation hypothesis are prone to several important sources of bias, which compromise the validity of their results. Methods that explicitly test the hypothesis and establish whether or not a causal relationship exists between compensation factors and prolonged whiplash symptoms are needed in future studies.

Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method

NASA Astrophysics Data System (ADS)

Ikeura, Takuro; Nozaki, Takayuki; Shiota, Yoichi; Yamamoto, Tatsuya; Imamura, Hiroshi; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji

2018-04-01

Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices.

Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors

NASA Astrophysics Data System (ADS)

Sheremet, V.; Genç, M.; Gheshlaghi, N.; Elçi, M.; Sheremet, N.; Aydınlı, A.; Altuntaş, I.; Ding, K.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2018-01-01

Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs.

Thin SOI lateral IGBT with band-to-band tunneling mechanism

NASA Astrophysics Data System (ADS)

Fu, Qiang; Tang, Zhaohuan; Tan, Kaizhou; Wang, Zhikuan; Mei, Yong

2017-06-01

In this paper, a novel 200V lateral IGBT on thin SOI layer with a band-to-band tunneling junction near the anode is proposed. The structure and the operating mechanism of the proposed IGBT are described and discussed. Its main feature is that the novel IGBT structure has a unique abrupt doped p++/n++ tunneling junction in the side of the anode. By utilizing the reverse bias characteristics of the tunneling junction, the proposed IGBT can achieve excellent reverse conducting performance. Numerical simulations suggest that a low reverse conduction voltage drop VR=-1.6V at a current density of 100A/cm2 and a soft factor S=0.63 of the build-in diode are achieved.

Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

DOE PAGES

Rajagopal, Adharsh; Williams, Spencer T.; Chueh, Chu-Chen; ...

2016-02-29

In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH 3NH 3PbI 3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH 3NH 3PbI 3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiO x/CH 3NH 3PbI 3 interfaces under RB. The detailed analysis navigating themore » complexities of I-V behavior in CH 3NH 3PbI 3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH 3NH 3PbI 3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.« less

Inelastic transport and low-bias rectification in a single-molecule diode.

PubMed

Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode

NASA Astrophysics Data System (ADS)

Podolska, N. I.; Lyublinskiy, A. G.; Grekhov, I. V.

2017-12-01

Abrupt high-density reverse current interruption has been numerically simulated for switching from forward to reverse bias in a silicon p + P 0 n + structure ( p-SOS diode). It has been shown that the current interruption in this structure occurs as a result of the formation of two dynamic domains of a strong electric field in regions in which the free carrier concentration substantially exceeds the concentration of the doping impurity. The first domain is formed in the n + region at the n + P 0 junction, while the second domain is formed in the P 0 region at the interface with the p + layer. The second domain expands much faster, and this domain mainly determines the current interruption rate. Good agreement is achieved between the simulation results and the experimental data when the actual electric circuit determining the electron-hole plasma pumping in and out is accurately taken into account.

Ventral Striatum Response During Reward and Punishment Reversal Learning in Unmedicated Major Depressive Disorder

PubMed Central

Robinson, Oliver J.; Cools, Roshan; Carlisi, Christina O.; Sahakian, Barbara J.; Drevets, Wayne C.

2017-01-01

Objective Affective biases may underlie many of the key symptoms of major depressive disorder, from anhedonia to altered cognitive performance. Understanding the cause of these biases is therefore critical in the quest for improved treatments. Depression is associated, for example, with a negative affective bias in reversal learning. However, despite the fact that reversal learning is associated with striatal response in healthy individuals and depressed individuals exhibit attenuated striatal function on multiple tasks, studies to date have not demonstrated striatal involvement in the negative bias in reversal learning in depression. In this study, the authors sought to determine whether this may be because reversal learning tasks conventionally used to study behavior examine reversals only on the basis of unexpected punishment and therefore do not adequately separate reward- and punishment-based behavior. Method The authors used functional MRI to com pare the hemodynamic response to a reversal learning task with mixed reward- and punishment-based reversal stages between individuals with unmedicated major depressive disorder (N=13) and healthy comparison subjects (N=14). Results Impaired reward (but not punishment) reversal accuracy was found alongside attenuated anteroventral striatal response to unexpected reward in depression. Conclusions Attenuated neurophysiological response of the anteroventral striatum may reflect dysfunction in circuits involving afferent projections from the orbitofrontal, limbic, and/or mesostriatal dopaminergic pathways, which conceivably may, together with the ventral striatum, underlie anhedonia in depression. Learning to appreciate and enjoy positive life experiences is critical for recovery from depression. This study pinpoints a neural target for such recovery. PMID:22420038

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

NASA Astrophysics Data System (ADS)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

High speed cross-amplitude modulation in concatenated SOA-EAM-SOA.

PubMed

Cleary, Ciaran S; Manning, Robert J

2012-06-18

We observe a near-ideal high speed amplitude impulse response in an SOA-EAM-SOA configuration under optimum conditions. Full amplitude recovery times as low as 10 ps with modulation depths of 70% were observed in pump-probe measurements. System behavior could be controlled by the choice of signal wavelength, SOA current biases and EAM reverse bias voltages. Experimental data and impulse response modelling indicated that the slow tail in the gain response of first SOA was negated by a combination of cross-absorption modulation between pump and modulated CW probe, and self-gain modulation of the modulated CW probe in both the EAM and second SOA.

Using RNA-seq to determine patterns of sex-bias in gene expression in the brain of the sex-role reversed Gulf Pipefish (Syngnathus scovelli).

PubMed

Beal, Andria P; Martin, F Douglas; Hale, Matthew C

2018-02-01

Sex-bias in gene expression is a widespread mechanism for controlling the development of phenotypes that differ between males and females. Most studies on sex-bias in gene expression have focused on species that exhibit traditional sex-roles (male-male competition and female parental care). By contrast the Syngnathid fishes (sea horses, pipefish, and sea dragons) are a group of organisms where many species exhibit male brooding and sex-role reversal (female-female competition for mates and paternal parental care), and little is known about how patterns of sex-bias in gene expression vary in species with sex-role reversal. Here we utilize RNA-seq technology to investigate patterns of sex-bias in gene expression in the brain tissue of the Gulf Pipefish (Syngnathus scovelli) a species that exhibits sex-role reversal. Gene expression analysis identified 73 sex-biased genes, 26 genes upregulated in females and 47 genes upregulated in males. Gene ontology analysis found 52 terms enriched for the sex-biased genes in a wide range of pathways suggesting that multiple functions and processes differ between the sexes. We focused on two areas of interest: sex steroids/hormones and circadian rhythms, both of which exhibited sex-bias in gene expression, and are known to influence sexual development in other species. Lastly, the work presented herein contributes to a growing body of genome data available for the Syngnathids, increasing our knowledge on patterns of gene expression in these unusual fishes. Copyright © 2017 Elsevier B.V. All rights reserved.

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

T/R switch design for short-range measurements, part 6.1A

NASA Technical Reports Server (NTRS)

Yu, B.

1984-01-01

The positive intrinsic negative (PIN) diode switch which is designed to protect the receiver from burnout or damage on transmission and channel the echo signal to the receiver on reception is outlined. The receiver must be protected firmly. A schematic diagram of a transformer rectifier (TR-ATR) switch for the Urbana Radar is shown. The T/R switch consists of a half wavelength coaxial cavity with tuning condenser and PIN diodes. Two UM4300 PIN diodes were mounted between the inner and outer conductor. The dc biasing voltage required for the PIN diodes is supplied by a control circuit. On transmission, the PIN diodes are forward biased to about 0.5 amperes. On reception, about 10 volts reverse voltage is applied to the diodes, which produces an initial reverse current to speed the recovery time. The T/R switch characteristics are estimated and the result of testing at different peak transmitter powers from 410 kW to 1500 kW is shown.

Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices

NASA Astrophysics Data System (ADS)

Lund, Cory; Romanczyk, Brian; Catalano, Massimo; Wang, Qingxiao; Li, Wenjun; DiGiovanni, Domenic; Kim, Moon J.; Fay, Patrick; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-05-01

In this study, the growth of high quality N-polar InGaN films by metalorganic chemical vapor deposition is presented with a focus on growth process optimization for high indium compositions and the structural and tunneling properties of such films. Uniform InGaN/GaN multiple quantum well stacks with indium compositions up to 0.46 were grown with local compositional analysis performed by energy-dispersive X-ray spectroscopy within a scanning transmission electron microscope. Bright room-temperature photoluminescence up to 600 nm was observed for films with indium compositions up to 0.35. To study the tunneling behavior of the InGaN layers, N-polar GaN/In0.35Ga0.65N/GaN tunnel diodes were fabricated which reached a maximum current density of 1.7 kA/cm2 at 5 V reverse bias. Temperature-dependent measurements are presented and confirm tunneling behavior under reverse bias.

Ultrasensitive NO2 gas sensors using hybrid heterojunctions of multi-walled carbon nanotubes and on-chip grown SnO2 nanowires

NASA Astrophysics Data System (ADS)

Nguyet, Quan Thi Minh; Van Duy, Nguyen; Manh Hung, Chu; Hoa, Nguyen Duc; Van Hieu, Nguyen

2018-04-01

Hybrid heterojunction devices are designed for ultrahigh response to NO2 toxic gas. The devices were constructed by assembling multi-walled carbon nanotubes (MWCNTs) on a microelectrode chip bridged bare Pt-electrode and a Pt-electrode with pre-grown SnO2 nanowires (NWs). All heterojunction devices were realized using different types of MWCNTs, which exhibit ultrahigh response to sub-ppm NO2 gas at 50 °C operated in the reverse bias mode. The response to 1 ppm NO2 gas reaches 11300, which is about 100 times higher than that of a back-to-back heterojunction device fabricated from SnO2 NWs and MWCNTs. In addition, the present device exhibits an ultralow detection limit of about 0.68 ppt. The modulation of trap-assisted tunneling current under reverse bias is the main gas-sensing mechanism. This principle device presents a concept for developing gas sensors made of a hybrid between semiconductor metal oxide NWs and CNTs.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, Robert L.; Kirbie, Hugh C.; Newton, Mark A.

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

Spin-Transfer Studies in Magnetic Multilayer Nanostructures

NASA Astrophysics Data System (ADS)

Emley, N. C.; Albert, F. J.; Ryan, E. M.; Krivorotov, I. N.; Ralph, D. C.; Buhrman, R. A.

2003-03-01

Numerous experiments have demonstrated current-induced magnetization reversal in ferromagnet/paramagnet/ferromagnet nanostructures with the current in the CPP geometry. The primary mechanism for this reversal is the transfer of angular momentum from the spin-polarized conduction electrons to the nanomagnet moment the spin transfer effect. This phenomenon has potential application in nanoscale, current-controlled non-volatile memory elements, but several challenges must be overcome for realistic device implementation. Typical Co/Cu/Co nanopillar devices, although effective for fundamental studies, are not advantageous for technological applications because of their large switching currents Ic ( 3-10 mA) and small R·A (< 1 mΩ·µm^2). Here we report initial results testing some possible approaches for enhancing spin-transfer device performance which involve the addition of more layers, and hence, more complexity, to the simple Co/Cu/Co trilayer structure. These additions include synthetic antiferromagnet layers (SAF), exchange biased layers, nano-oxide layers (NOL), and additional magnetic layers. Research supported by NSF and DARPA

GUARD RING SEMICONDUCTOR JUNCTION

DOEpatents

Goulding, F.S.; Hansen, W.L.

1963-12-01

A semiconductor diode having a very low noise characteristic when used under reverse bias is described. Surface leakage currents, which in conventional diodes greatly contribute to noise, are prevented from mixing with the desired signal currents. A p-n junction is formed with a thin layer of heavily doped semiconductor material disposed on a lightly doped, physically thick base material. An annular groove cuts through the thin layer and into the base for a short distance, dividing the thin layer into a peripheral guard ring that encircles the central region. Noise signal currents are shunted through the guard ring, leaving the central region free from such currents. (AEC)

Analysis of reliable sub-ns spin-torque switching under transverse bias magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

D'Aquino, M., E-mail: daquino@uniparthenope.it; Perna, S.; Serpico, C.

2015-05-07

The switching process of a magnetic spin-valve nanosystem subject to spin-polarized current pulses is considered. The dependence of the switching probability on the current pulse duration is investigated. The further application of a transverse field along the intermediate anisotropy axis of the particle is used to control the quasi-random relaxation of magnetization to the reversed magnetization state. The critical current amplitudes to realize the switching are determined by studying the phase portrait of the Landau-Lifshtz-Slonczewski dynamics. Macrospin numerical simulations are in good agreement with the theoretical prediction and demonstrate reliable switching even for very short (below 100 ps) current pulses.

Voltage stress induced reversible diode behavior in pentacene thin films

NASA Astrophysics Data System (ADS)

Murdey, Richard; Sato, Naoki

2012-12-01

The current-voltage characteristics of a vacuum-deposited 100 nm pentacene thin film have been measured in situ under ultrahigh vacuum. Despite using bottom contact geometry with titanium for both electrodes, the I-V curves are asymmetric and the direction and degree of the diode-like behavior vary with sample and measurement history. After careful examination we have found that applying a high positive or negative bias voltage for about 24 h at elevated temperatures was sufficient to completely switch the diode forward direction. The switching action is fully reversible and the diode behavior, once switched, remains stable to repeated measurements at least over a period of several weeks.

Advanced Biasing Experiments on the C-2 Field-Reversed Configuration Device

NASA Astrophysics Data System (ADS)

Thompson, Matthew; Korepanov, Sergey; Garate, Eusebio; Yang, Xiaokang; Gota, Hiroshi; Douglass, Jon; Allfrey, Ian; Valentine, Travis; Uchizono, Nolan; TAE Team

2014-10-01

The C-2 experiment seeks to study the evolution, heating and sustainment effects of neutral beam injection on field-reversed configuration (FRC) plasmas. Recently, substantial improvements in plasma performance were achieved through the application of edge biasing with coaxial plasma guns located in the divertors. Edge biasing provides rotation control that reduces instabilities and E × B shear that improves confinement. Typically, the plasma gun arcs are run at ~ 10 MW for the entire shot duration (~ 5 ms), which will become unsustainable as the plasma duration increases. We have conducted several advanced biasing experiments with reduced-average-power plasma gun operating modes and alternative biasing cathodes in an effort to develop an effective biasing scenario applicable to steady state FRC plasmas. Early results show that several techniques can potentially provide effective, long-duration edge biasing.

The evolution of sex roles in birds is related to adult sex ratio.

PubMed

Liker, András; Freckleton, Robert P; Székely, Tamás

2013-01-01

Sex-role reversal represents a formidable challenge for evolutionary biologists, since it is not clear which ecological, life-history or social factors facilitated conventional sex roles (female care and male-male competition for mates) to be reversed (male care and female-female competition). Classic theories suggested ecological or life-history predictors of role reversal, but most studies failed to support these hypotheses. Recent theory however predicts that sex-role reversal should be driven by male-biased adult sex ratio (ASR). Here we test this prediction for the first time using phylogenetic comparative analyses. Consistent with theory, both mating system and parental care are strongly related to ASR in shorebirds: conventional sex roles are exhibited by species with female-biased ASR, whereas sex-role reversal is associated with male-biased ASR. These results suggest that social environment has a strong influence on breeding systems and therefore revealing the causes of ASR variation in wild populations is essential for understanding sex role evolution.

Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.

PubMed

Ye, Yalong; Zhao, Jie; Xiao, Li; Cheng, Baochang; Xiao, Yanhe; Lei, Shuijin

2018-06-06

Hybrid nanostructures can show enormous potential in different areas because of their unique structural configurations. Herein, Fe@Al 2 O 3 hybrid nanotubes are constructed via a homogeneous coprecipitation method followed by subsequent annealing in a reducing atmosphere. The introduction of zero band gap Fe nanocrystals in the wall of ultrawide band gap Al 2 O 3 insulator nanotubes results in the formation of charge trap centers, and correspondingly a single hybrid nanotube-based two-terminal device can show reversible negative resistive switching (RS) characteristics with symmetrical negative differential resistance (NDR) at relatively high operation bias voltages. At a large bias voltage, holes and electrons can be injected into traps at two ends from electrodes, respectively, and then captured. The bias voltage dependence of asymmetrical filling of charges can lead to a reversible variation of built-in electromotive force, and therefore the symmetrical negative RS with NDR arises from two reversible back-to-back series bipolar RS. At a low readout voltage, the single Fe@Al 2 O 3 hybrid nanotube can show an excellent nonvolatile memory feature with a relatively large switching ratio of ∼30. The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.

Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on n-Silicon Substrate

NASA Astrophysics Data System (ADS)

Jiang, D. L.; Ma, X. Z.; Li, L.; Xu, Z. K.

2017-10-01

An a-IGZO/ n-Si heterojunction device has been fabricated at room temperature by depositing amorphous InGaZnO (a-IGZO) film on n-type silicon substrate by plasma-assisted pulsed laser deposition and its optoelectrical properties studied in detail. The heterojunction showed distinct rectifying characteristic with rectification ratio of 1.93 × 103 at ±2 V bias and reverse leakage current density of 1.6 × 10-6 A cm-2 at -2 V bias. More interestingly, the heterojunction not only showed the characteristic of unbiased photoresponse, but could also detect either ultraviolet or ultraviolet-visible light by simply changing the polarity of the bias applied to the heterojunction. The variable photoresponse phenomenon and the charge transport mechanisms in the heterojunction are explained based on the energy band diagram of the heterojunction.

Electrical characteristics of pentacene-based Schottky diodes

NASA Astrophysics Data System (ADS)

Lee, Y. S.; Park, J. H.; Choi, J. S.

2003-01-01

The current-voltage ( I-V), capacitance-frequency ( C-f), and capacitance-voltage ( C-V) characteristics of organic diodes with a pentacene/aluminum Sckottky contact have been investigated. From the measured diode capacitances, it is revealed that the frequency-dependent properties are related to the localized traps in the band gap of pentacene. The C-V characteristics for different test frequencies are presented. In the low frequency region, the capacitance is nearly constant with reverse bias and increase with the forward bias. With even higher forward bias, the capacitance gradually decreases, which is due to the detrapping of the trapped charges. The intrinsic charge carrier concentration in pentacene was extracted as 3.1×10 17 cm -3 from the C-V characteristics. The C-V properties of the pentacene-based metal-oxide-semiconductor structure have also studied.

Microelectronic Precision Optical Element Fabrication

DTIC Science & Technology

2009-01-01

spectra for a 0-25V reverse bias and the device tilted at -35° to the optical axis. Also shown is the diode reverse bias I-V curve . 1530 1540...optical modulator using an MEMS deformable micromirror array," Journal of Lightwave Technology, vol. 24(1), pp. 516-525, January 2006. [4] D. H. Parker, M

Reversal of spontaneous magnetization and spontaneous exchange bias for Sm1-xYxCrO3: The effect of Y doping

NASA Astrophysics Data System (ADS)

Zhang, Hongguang; Wang, Jianhua; Xie, Liang; Fu, Dexiang; Guo, Yanyan; Li, Yongtao

2017-11-01

We report the crystal and electronic structures and magnetic properties of non-magnetic Y3+ ion doped SmCrO3 crystals. Structural distortion and electronic structure variation are caused by cation disorder due to Y doping. Although the spin moment of Sm3+ is diluted by nonmagnetic Y ions, spin reorientation continues to exist, and the temperature-dependent magnetization reversal effect and the spontaneous exchange bias effect under zero field cooling are simultaneously induced below Neel temperature. Significantly, the method of doping promotes the achievement of temperature dependent tunable switching of magnetization and sign of a spontaneous exchange bias from positive to negative. Our work provides more tunable ways to the sign reversal of magnetization and exchange bias, which have potential application in designing magnetic random access memory devices, thermomagnetic switches and spin-valve devices.

Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT

NASA Astrophysics Data System (ADS)

Malik, Amit; Sharma, Chandan; Laishram, Robert; Bag, Rajesh Kumar; Rawal, Dipendra Singh; Vinayak, Seema; Sharma, Rajesh Kumar

2018-04-01

This article reports negative shift in the threshold-voltage in AlGaN/GaN high electron mobility transistor (HEMT) with application of reverse gate bias stress. The device is biased in strong pinch-off and low drain to source voltage condition for a fixed time duration (reverse gate bias stress), followed by measurement of transfer characteristics. Negative threshold voltage shift after application of reverse gate bias stress indicates the presence of more carriers in channel as compared to the unstressed condition. We propose the presence of AlGaN/GaN interface states to be the reason of negative threshold voltage shift, and developed a process to electrically characterize AlGaN/GaN interface states. We verified the results with Technology Computer Aided Design (TCAD) ATLAS simulation and got a good match with experimental measurements.

Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn : CdS nanoflake/nanowire heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Weichang; Zhou, Yong; Peng, Yuehua; Zhang, Yong; Yin, Yanling; Tang, Dongsheng

2014-11-01

Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn : CdS nanoflake/nanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn : CdS or GaTe, the electrical measurement of GaTe/Sn : CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 A W-1 and (1.06-2.16) × 105%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the Ids-Vds curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn : CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn : CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.

Differential Depletion Capacitance Approximation Analysis Under DC Voltage for Air-Exposed Cu/n-Si Schottky Diodes

NASA Astrophysics Data System (ADS)

Korkut, A.

It is well known that the semiconductor surface is easily oxidized by air-media in time. This work studieds the characterization of Schottky diodes and changes in depletion capacitance, which is caused by air exposure of a group of Cu/n-Si/Al Schottky diodes. First, data for current-voltage and capacitance-voltage were a Ren, and then ideality factor, barrier height, built-in potential (Vbi), donor concentration and Fermi level, interfacial oxide thickness, interface state density were calculated. It is seen that depletion capacitance was calculate; whereafter built-in potential played an important role in Schottky diodes characteristic. Built-in potential directly affects the characteristic of Schottky diodes and a turning point occurs. In case of forward and reverse bias, depletion capacitance versus voltage graphics are matched, but in an opposite direction. In case of forward bias, differential depletion capacitance begins from minus values, it is raised to first Vbi, then reduced to second Vbi under the minus condition. And it sharply gones up to positive apex, then sharply falls down to near zero, but it takes positive values depending on DC voltage. In case of reverse bias, differential depletion capacitance takes to small positive values. In other respects, we see that depletion characteristics change considerably under DC voltage.

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

NASA Astrophysics Data System (ADS)

Echresh, Ahmad; Chey, Chan Oeurn; Shoushtari, Morteza Zargar; Nur, Omer; Willander, Magnus

2014-11-01

We have fabricated, characterized, and compared ZnO nanorods/p-GaN and n-Zn0.94Ag0.06O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed an obvious rectifying behaviour of both LEDs. A reduction of the optical band gap of the Zn0.94Ag0.06O nanorods compared to pure ZnO nanorods was observed. This reduction leads to decrease the valence band offset at n-Zn0.94Ag0.06O nanorods/p-GaN interface compared to n-ZnO nanorods/p-GaN heterojunction. Consequently, this reduction leads to increase the hole injection from the GaN to the ZnO. From electroluminescence measurement, white light was observed for the n-Zn0.94Ag0.06O nanorods/p-GaN heterojunction LEDs under forward bias, while for the reverse bias, blue light was observed. While for the n-ZnO nanorods/p-GaN blue light dominated the emission in both forward and reverse biases. Further, the LEDs exhibited a high sensitivity in responding to UV illumination. The results presented here indicate that doping ZnO nanorods might pave the way to tune the light emission from n-ZnO/p-GaN LEDs.

Immortal time bias in the study of stillbirth risk factors: the example of gestational diabetes.

PubMed

Hutcheon, Jennifer A; Kuret, Verena; Joseph, K S; Sabr, Yasser; Lim, Kenneth

2013-11-01

Current understanding of the increased risk for stillbirth in gestational diabetes mellitus is often based on large cohort studies in which the risk of stillbirth in women with this disease is compared with the risk in women without. However, such studies could be susceptible to immortal time bias because, although many cohorts begin at 20 weeks' gestation, pregnancies must "survive" until 24-28 weeks in order to be screened and diagnosed with gestational diabetes. We describe the theoretical potential for immortal time bias in studies of stillbirth and gestational diabetes and then quantify the magnitude of the bias using 2006 United States vital statistics data. Although gestational diabetes was protective against stillbirth when including all births (relative risk = 0.88 [95% confidence interval = 0.79-0.99]), restricting analyses to births at >28 weeks' gestation reversed the effect and diabetes became associated with an increased risk of stillbirth (1.25 [1.11-1.41]). Immortal time before diagnosis of gestational diabetes may bias our understanding of the stillbirth risk associated with this condition.

Properties of the surface generation-recombination noise in 1.94 μm GaSb-based laser diodes

NASA Astrophysics Data System (ADS)

Glemža, Justinas; Palenskis, Vilius; Pralgauskaitė, Sandra; Vyšniauskas, Juozas; Matukas, Jonas

2018-06-01

A detail investigation of generation-recombination (g-r) noise in 1.94 μm GaSb-based type-I ridge waveguide laser diodes (LDs) has been performed in a temperature range (230-295) K. Lorentzian-type noise spectra have been observed in the current range below the threshold at the forward and reverse biases of the LDs with the same characteristic time (3.7 μs) and activation energy (≈0.37 eV) of charge carriers transitions associated with the g-r processes. An equivalent electrical circuit possessing the voltage noise source is presented, which allows the description of both the current-voltage characteristic and the voltage fluctuation spectral density of the laser diode. Results indicate that the origin of the g-r noise in the investigated samples is the surface recombination caused by the surface leakage current channel between n+GaSb and p+GaSb contacts, which is practically independent from the applied bias polarity.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

NASA Astrophysics Data System (ADS)

Durmuş, Perihan; Altindal, Şemsettin

2017-10-01

In this study, electrical parameters of the Al/Bi4Ti3O12/p-Si metal-ferroelectric-semiconductor (MFS) structure and their temperature dependence were investigated using current-voltage (I-V) data measured between 120 K and 300 K. Semi-logarithmic I-V plots of the structure revealed that fabricated structure presents two-diode behavior that leads to two sets of ideality factor, reverse saturation current and zero-bias barrier height (BH) values. Obtained results of these parameters suggest that current conduction mechanism (CCM) deviates strongly from thermionic emission theory particularly at low temperatures. High values of interface states and nkT/q-kT/q plot supported the idea of deviation from thermionic emission. In addition, ln(I)-ln(V) plots suggested that CCM varies from one bias region to another and depends on temperature as well. Series resistance values were calculated using Ohm’s law and Cheungs’ functions, and they decreased drastically with increasing temperature.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Observation of magnetization and exchange bias reversals in NdFe0.5Cr0.5O3

NASA Astrophysics Data System (ADS)

Sharannia, M. P.; De, Santanu; Singh, Ripandeep; Das, A.; Nirmala, R.; Santhosh, P. N.

2017-05-01

Polycrystalline NdFe0.5Cr0.5O3 has orthorhombic structure with Pnma space group and is magnetically ordered at room temperature as confirmed by neutron diffraction. The magnetic structure involves CxGyFz type ordering of Fe3+/Cr3+ ions. NdFe0.5Cr0.5O3 shows magnetization reversal and sign reversal of exchange bias at 16 K. Nd3+ moments that get induced by the internal field of |Fe+Cr| sublattice couple antiferromagnetically with the ferromagnetic component of |Fe+Cr| sublattice. Nd3+ moments overcome the |Fe+Cr| moments at 16 K below which the material shows negative magnetization and positive exchange bias.

Partial Shade Stress Test for Thin-Film Photovoltaic Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Deline, Chris

2015-09-02

Partial shade of monolithic thin-film PV modules can cause reverse-bias conditions leading to permanent damage. In this work, we propose a partial shade stress test for thin-film PV modules that quantifies permanent performance loss. We designed the test with the aid of a computer model that predicts the local voltage, current and temperature stress that result from partial shade. The model predicts the module-scale interactions among the illumination pattern, the electrical properties of the photovoltaic material and the thermal properties of the module package. The test reproduces shading and loading conditions that may occur in the field. It accounts formore » reversible light-induced performance changes and for additional stress that may be introduced by light-enhanced reverse breakdown. We present simulated and experimental results from the application of the proposed test.« less

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

11th International Conference "Correlation Optics": Propolis films for hybrid biomaterial-inorganic electronics and optoelectronics.

PubMed

Brus, Viktor V; Pidkamin, Leonid J; Ilashchuk, Maria I; Maryanchuk, Pavlo D

2014-04-01

We report on the analysis of optical, polarimetric, and electrical properties of propolis films and hybrid biomaterial-inorganic heterojunctions based on them. It was shown that the material of the propolis films belongs to wide-bandgap optically active substances with the light-scattering centers, which possess complex optical properties. The values of the specific resistance ρ(P)=1.9·10⁷ Ω·cm and dielectric constant ε(P)=19.5 of the propolis film were determined from the spectral distribution of the real and imaginary components of its impedance at room temperature, respectively. The dominating current transport mechanisms through the hybrid bioinorganic heterojunction propolis/p-CdTe were established to be the interface-states-assisted generation-recombination within the depletion region via deep energy levels at forward bias as well as the leakage current through the shunt resistance at reverse bias.

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

PubMed

Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

2010-01-04

A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Enhancement of exchange bias in ferromagnetic/antiferromagnetic core-shell nanoparticles through ferromagnetic domain wall formation

NASA Astrophysics Data System (ADS)

Wu, Rui; Ding, Shilei; Lai, Youfang; Tian, Guang; Yang, Jinbo

2018-01-01

The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell nanoparticles is investigated. Magnetization reversals in the ferromagnetic core were controlled between the coherent rotation and the domain wall motion by modulating the ferromagnetic domain wall width with parameters of uniaxial anisotropy constant and exchange coupling strength. An anomalous monotonic dependence of exchange bias on the uniaxial anisotropy constant is found in systems with small exchange coupling, showing an obvious violation of classic Meiklejohn-Bean model, while domain walls are found to form close to the interface and propagate in the ferromagnetic core with larger uniaxial anisotropy in both branches of the hysteresis. The asymmetric magnetization reversal with the formation of a spherical domain wall dramatically reduces the coercive field in the ascending branch, leading to the enhancement of the exchange bias. The results provide another degree of freedom to optimize the magnetic properties of magnetic nanoparticles for applications.

Light-weight DC to very high voltage DC converter

DOEpatents

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Universality of Non-Ohmic Shunt Leakage in Thin-Film Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dongaonkar, S.; Servaites, J.D.; Ford, G.M.

2010-01-01

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se 2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V<~0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (I sh) , across all three solar cell types considered, is characterized by the following commonmore » phenomenological features: (a) voltage symmetry about V=0 , (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.« less

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Sriram; Lee, Edwin W.; Lee, Choong Hee; Zhang, Yuewei; McCulloch, William D.; Johnson, Jared M.; Hwang, Jinwoo; Wu, Yiying; Rajan, Siddharth

2016-10-01

The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics.

Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states

DOE PAGES

Li, C. H.; van ‘t Erve, O. M. J.; Rajput, S.; ...

2016-11-17

Three-dimensional topological insulators (TIs) exhibit time-reversal symmetry protected, linearly dispersing Dirac surface states with spin–momentum locking. Band bending at the TI surface may also lead to coexisting trivial two-dimensional electron gas (2DEG) states with parabolic energy dispersion. A bias current is expected to generate spin polarization in both systems, although with different magnitude and sign. Here we compare spin potentiometric measurements of bias current-generated spin polarization in Bi2Se3(111) where Dirac surface states coexist with trivial 2DEG states, and in InAs(001) where only trivial 2DEG states are present. We observe spin polarization arising from spin–momentum locking in both cases, with oppositemore » signs of the measured spin voltage. We present a model based on spin dependent electrochemical potentials to directly derive the sign expected for the Dirac surface states, and show that the dominant contribution to the current-generated spin polarization in the TI is from the Dirac surface states.« less

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fireman, Micha N.; Browne, David A.; Speck, James S.

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditionsmore » that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.« less

Performance improvement of magnetized coaxial plasma gun by magnetic circuit on a bias coil

NASA Astrophysics Data System (ADS)

Edo, Takahiro; Matsumoto, Tadafumi; Asai, Tomohiko; Kamino, Yasuhiro; Inomoto, Michiaki; Gota, Hiroshi

2016-10-01

A magnetized coaxial plasmoid accelerator has been utilized for compact torus (CT) injection to refuel into fusion reactor core plasma. Recently, CT injection experiments have been conducted on the C-2/C-2U facility at Tri Alpha Energy. In the series of experiments successful refueling, i.e. increased particle inventory of field-reversed configuration (FRC) plasma, has been observed. In order to improve the performance of CT injector and to refuel in the upgraded FRC device, called C-2W, with higher confinement magnetic field, magnetic circuit consisting of magnetic material onto a bias magnetic coil is currently being tested at Nihon University. Numerical work suggests that the optimized bias magnetic field distribution realizes the increased injection velocity because of higher conversion efficiency of Lorenz self force to kinetic energy. Details of the magnetic circuit design as well as results of the test experiment and field calculations will be presented and discussed.

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

NASA Astrophysics Data System (ADS)

Arya, Sandeep; Sharma, Asha; Singh, Bikram; Riyas, Mohammad; Bandhoria, Pankaj; Aatif, Mohammad; Gupta, Vinay

2018-05-01

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (-1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

Color tunable electroluminescence and resistance switching from a ZnO-nanorod-TaOx-p-GaN heterojunction.

PubMed

Zhao, J L; Teo, K L; Zheng, K; Sun, X W

2016-03-18

Well-aligned ZnO nanorods have been prepared on p-GaN-sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaOx is employed as the intermediate layer and an n-ZnO-TaOx-p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaOx layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction.

Romantic relationship status biases memory of faces of attractive opposite-sex others: evidence from a reverse-correlation paradigm.

PubMed

Karremans, Johan C; Dotsch, Ron; Corneille, Olivier

2011-12-01

Previous research has demonstrated that, presumably as a way to protect one's current romantic relationship, individuals involved in a heterosexual romantic relationship tend to give lower attractiveness ratings to attractive opposite-sex others as compared to uninvolved individuals (i.e., the derogation effect). The present study importantly extends this research by examining whether romantic relationship status actually biases memory for the facial appearance of attractive (vs. unattractive) mates. To address this issue, we used a reverse-correlation technique (Mangini & Biederman, 2004), originally developed to get a visual approximation of an individual's internal representation of a target category or person. In line with the derogation effect, results demonstrated that romantically involved (vs. uninvolved) individuals indeed held a less attractive memory of a previously encountered attractive mate's face. Interestingly, they also held a more attractive memory of an unattractive mate's face as compared to uninvolved individuals. This latter finding may suggest that romantically involved (as compared to uninvolved) individuals differentiate opposite-sex others along the attractiveness dimension less. Copyright © 2011 Elsevier B.V. All rights reserved.

Compositional grading of InxGa1-xAs/GaAs tunnel junctions enhanced by ErAs nanoparticles

NASA Astrophysics Data System (ADS)

Salas, R.; Krivoy, E. M.; Crook, A. M.; Nair, H. P.; Bank, S. R.

2011-10-01

We investigate the electrical conductivity of GaAs-based tunnel junctions enhanced with semimetallic ErAs nanoparticles. In particular, we examine the effects of digitally-graded InGaAs alloys on the n-type side of the tunnel junction, along with different p-type doping levels. Device characteristics of the graded structures indicate that the n-type Schottky barrier may not be the limiting factor in the tunneling current as initially hypothesized. Moreover, significantly improved forward and reverse bias tunneling currents were observed with increased p-type doping, suggesting p-side limitation.

Sex Ratio Bias Leads to the Evolution of Sex Role Reversal in Honey Locust Beetles.

PubMed

Fritzsche, Karoline; Booksmythe, Isobel; Arnqvist, Göran

2016-09-26

The reversal of conventional sex roles was enigmatic to Darwin, who suggested that it may evolve when sex ratios are female biased [1]. Here we present direct evidence confirming Darwin's hypothesis. We investigated mating system evolution in a sex-role-reversed beetle (Megabruchidius dorsalis) using experimental evolution under manipulated sex ratios and food regimes. In female-biased populations, where reproductive competition among females was intensified, females evolved to be more attractive and the sex roles became more reversed. Interestingly, female-specific mating behavior evolved more rapidly than male-specific mating behavior. We show that sexual selection due to reproductive competition can be strong in females and can target much the same traits as in males of species with conventional mating systems. Our study highlights two central points: the role of ecology in directing sexual selection and the role that females play in mating system evolution. Copyright © 2016 Elsevier Ltd. All rights reserved.

Dynamics of direct X-ray detection processes in high-Z Bi2O3 nanoparticles-loaded PFO polymer-based diodes

NASA Astrophysics Data System (ADS)

Ciavatti, A.; Cramer, T.; Carroli, M.; Basiricò, L.; Fuhrer, R.; De Leeuw, D. M.; Fraboni, B.

2017-10-01

Semiconducting polymer based X-ray detectors doped with high-Z nanoparticles hold the promise to combine mechanical flexibility and large-area processing with a high X-ray stopping power and sensitivity. Currently, a lack of understanding of how nanoparticle doping impacts the detector dynamics impedes the optimization of such detectors. Here, we study direct X-ray radiation detectors based on the semiconducting polymer poly(9,9-dioctyfluorene) blended with Bismuth(III)oxide (Bi2O3) nanoparticles (NPs). Pure polymer diodes show a high mobility of 1.3 × 10-5 cm2/V s, a low leakage current of 200 nA/cm2 at -80 V, and a high rectifying factor up to 3 × 105 that allow us to compare the X-ray response of a polymer detector in charge-injection conditions (forward bias) and in charge-collection conditions (reverse bias), together with the impact of NP-loading in the two operation regimes. When operated in reverse bias, the detectors reach the state of the art sensitivity of 24 μC/Gy cm2, providing a fast photoresponse. In forward operation, a slower detection dynamics but improved sensitivity (up to 450 ± 150 nC/Gy) due to conductive gain is observed. High-Z NP doping increases the X-ray absorption, but higher NP loadings lead to a strong reduction of charge-carrier injection and transport due to a strong impact on the semiconductor morphology. Finally, the time response of optimized detectors showed a cut-off frequency up to 200 Hz. Taking advantage of such a fast dynamic response, we demonstrate an X-ray based velocity tracking system.

More Reasons to be Straightforward: Findings and Norms for Two Scales Relevant to Social Anxiety

PubMed Central

Rodebaugh, Thomas L.; Heimberg, Richard G.; Brown, Patrick J.; Fernandez, Katya C.; Blanco, Carlos; Schneier, Franklin R.; Liebowitz, Michael R.

2011-01-01

The validity of both the Social Interaction Anxiety Scale and Brief Fear of Negative Evaluation scale has been well-supported, yet the scales have a small number of reverse-scored items that may detract from the validity of their total scores. The current study investigates two characteristics of participants that may be associated with compromised validity of these items: higher age and lower levels of education. In community and clinical samples, the validity of each scale's reverse-scored items was moderated by age, years of education, or both. The straightforward items did not show this pattern. To encourage the use of the straightforward items of these scales, we provide normative data from the same samples as well as two large student samples. We contend that although response bias can be a substantial problem, the reverse-scored questions of these scales do not solve that problem and instead decrease overall validity. PMID:21388781

Real-Time Terahertz Imaging Using a Quantum Cascade Laser and Uncooled Microbolometer Focal Plane Array

DTIC Science & Technology

2008-06-01

reverse magnetron ” design (in which the polarity of the magnetron elements are reversed—such that the cathode constitutes the outer ring; the anode ...included as inset frames within Fig. 20. The dual nature of this figure (reporting both voltage and intensity vs. bias current) is useful in that it...tuned micro- magnetrons [60]-[61]. Conventional magnetrons (such as those used to generate microwaves) have physical dimensions which are excessively

Magnetic Biasing of a Ferroelectric Hysteresis Loop in a Multiferroic Orthoferrite

NASA Astrophysics Data System (ADS)

Tokunaga, Y.; Taguchi, Y.; Arima, T.; Tokura, Y.

2014-01-01

In a multiferroic orthoferrite Dy0.7Tb0.3FeO3, which shows electric-field-(E-)driven magnetization (M) reversal due to a tight clamping between polarization (P) and M, a gigantic effect of magnetic-field (H) biasing on P-E hysteresis loops is observed in the case of rapid E sweeping. The magnitude of the bias E field can be controlled by varying the magnitude of H, and its sign can be reversed by changing the sign of H or the relative clamping direction between P and M. The origin of this unconventional biasing effect is ascribed to the difference in the Zeeman energy between the +P and -P states coupled with the M states with opposite sign.

Enhanced nonlinear current-voltage behavior in Au nanoparticle dispersed CaCu 3 Ti 4 O 12 composite films

NASA Astrophysics Data System (ADS)

Chen, Cong; Wang, Can; Ning, Tingyin; Lu, Heng; Zhou, Yueliang; Ming, Hai; Wang, Pei; Zhang, Dongxiang; Yang, Guozhen

2011-10-01

An enhanced nonlinear current-voltage behavior has been observed in Au nanoparticle dispersed CaCu 3Ti 4O 12 composite films. The double Schottky barrier model is used to explain the enhanced nonlinearity in I-V curves. According to the energy-band model and fitting result, the nonlinearity in Au: CCTO film is mainly governed by thermionic emission in the reverse-biased Schottky barrier. This result not only supports the mechanism of double Schottky barrier in CCTO, but also indicates that the nonlinearity of current-voltage behavior could be improved in nanometal composite films, which has great significance for the resistance switching devices.

Temperature dependent characterization of gallium arsenide X-ray mesa p-i-n photodiodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lioliou, G., E-mail: G.Lioliou@sussex.ac.uk; Barnett, A. M.; Meng, X.

2016-03-28

Electrical characterization of two GaAs p{sup +}-i-n{sup +} mesa X-ray photodiodes over the temperature range 0 °C to 120 °C together with characterization of one of the diodes as an X-ray detector over the temperature range 0 °C to 60 °C is reported as part of the development of photon counting X-ray spectroscopic systems for harsh environments. The randomly selected diodes were fully etched and unpassivated. The diodes were 200 μm in diameter and had 7 μm thick i layers. The leakage current density was found to increase from (3 ± 1) nA/cm{sup −2} at 0 °C to (24.36 ± 0.05) μA/cm{sup −2} at 120 °C for D1 and from a current density smallermore » than the uncertainty (0.2 ± 1.2) nA/cm{sup −2} at 0 °C to (9.39 ± 0.02) μA/cm{sup −2} at 120 °C for D2 at the maximum investigated reverse bias (15 V). The best energy resolution (FWHM at 5.9 keV) was achieved at 5 V reverse bias, at each temperature; 730 eV at 0 °C, 750 eV at 20 °C, 770 eV at 40 °C, and 840 eV at 60 °C. It was found that the parallel white noise was the main source of the photopeak broadening only when the detector operated at 60 °C, at 5 V, 10 V, and 15 V reverse bias and at long shaping times (>5 μs), whereas the sum of the dielectric noise and charge trapping noise was the dominant source of noise for all the other spectra.« less

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-09-02

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu

2015-06-14

Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature andmore » current density compared to masks covering entire cells.« less

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

PubMed

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Utilizing Schottky barriers to suppress short-channel effects in organic transistors

NASA Astrophysics Data System (ADS)

Fernández, Anton F.; Zojer, Karin

2017-10-01

Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio.

PubMed

Murali, Krishna; Dandu, Medha; Das, Sarthak; Majumdar, Kausik

2018-02-14

Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe 2 /SnSe 2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 10 4 , and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V -1 . The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe 2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.

Developmental reversals in risky decision making: intelligence agents show larger decision biases than college students.

PubMed

Reyna, Valerie F; Chick, Christina F; Corbin, Jonathan C; Hsia, Andrew N

2014-01-01

Intelligence agents make risky decisions routinely, with serious consequences for national security. Although common sense and most theories imply that experienced intelligence professionals should be less prone to irrational inconsistencies than college students, we show the opposite. Moreover, the growth of experience-based intuition predicts this developmental reversal. We presented intelligence agents, college students, and postcollege adults with 30 risky-choice problems in gain and loss frames and then compared the three groups' decisions. The agents not only exhibited larger framing biases than the students, but also were more confident in their decisions. The postcollege adults (who were selected to be similar to the students) occupied an interesting middle ground, being generally as biased as the students (sometimes more biased) but less biased than the agents. An experimental manipulation testing an explanation for these effects, derived from fuzzy-trace theory, made the students look as biased as the agents. These results show that, although framing biases are irrational (because equivalent outcomes are treated differently), they are the ironical output of cognitively advanced mechanisms of meaning making.

90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer spin valve component investigated by polarized neutron reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Callori, S. J., E-mail: sara.callori@ansto.gov.au; Bertinshaw, J.; Bragg Institute, Australian Nuclear Science and Technology Organization, Lucas Heights, New South Wales 2234

2014-07-21

We have observed 90° magnetic coupling in a NiFe/FeMn/biased NiFe multilayer system using polarized neutron reflectometry. Magnetometry results show magnetic switching for both the biased and free NiFe layers, the latter of which reverses at low applied fields. As these measurements are only capable of providing information about the total magnetization within a sample, polarized neutron reflectometry was used to investigate the reversal behavior of the NiFe layers individually. Both the non-spin-flip and spin-flip neutron reflectometry signals were tracked around the free NiFe layer hysteresis loop and were used to detail the evolution of the magnetization during reversal. At lowmore » magnetic fields near the free NiFe coercive field, a large spin-flip signal was observed, indicating magnetization aligned perpendicular to both the applied field and pinned layer.« less

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

NASA Astrophysics Data System (ADS)

Hamri, D.; Teffahi, A.; Djeghlouf, A.; Chalabi, D.; Saidane, A.

2018-04-01

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si0.65Ge0.35 (FM1) and Pt/n-Si0.65Ge0.35(PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height (ΦB0), ideality factor (n) and series resistance (RS) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole-Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (NSS) indicated a difference in interface reactivity. Distribution profiles of series resistance (RS) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Microwave Comb Generator

NASA Technical Reports Server (NTRS)

Sigman, E. H.

1989-01-01

Stable reference tones aid testing and calibration of microwave receivers. Signal generator puts out stable tones in frequency range of 2 to 10 GHz at all multiples of reference input frequency, at any frequency up to 1 MHz. Called "comb generator" because spectral plot resembles comb. DC reverse-bias current switched on and off at 1 MHz to generate sharp pulses in step-recovery diode. Microwave components mounted on back of special connector containing built-in attenuator. Used in testing microwave and spread-spectrum wide-band receivers.

Thermal-inertial ratchet effects: negative mobility, resonant activation, noise-enhanced stability, and noise-weakened stability.

PubMed

Li, Jing-hui; Łuczka, Jerzy

2010-10-01

Transport properties of a Brownian particle in thermal-inertial ratchets subject to an external time-oscillatory drive and a constant bias force are investigated. Since the phenomena of negative mobility, resonant activation and noise-enhance stability were reported before, in the present paper, we report some additional aspects of negative mobility, resonant activation and noise-enhance stability, such as the ingredients for the appearances of these phenomena, multiple resonant activation peaks, current reversals, noise-weakened stability, and so on.

Midwavelength interband cascade infrared photodetectors with superlattice absorbers and gain

NASA Astrophysics Data System (ADS)

Lei, Lin; Li, Lu; Lotfi, Hossein; Ye, Hao; Yang, Rui Q.; Mishima, Tetsuya D.; Santos, Michael B.; Johnson, Matthew B.

2018-01-01

We report on a comparison study of the electrical and optical properties of a set of device structures with different numbers of cascade stages, type-II superlattice (T2SL) absorber thickness, and doping variations, as well as a noncurrent-matched interband cascade infrared photodetectors (ICIP) structure with equal absorbers. Multistage ICIPs were demonstrated to be capable of operating at high temperatures at zero-bias with superior carrier transport over comparable conventional one-stage detectors. Based on the temperature dependence and bias sensitivity of their responsivities with various absorber thicknesses, the diffusion length is estimated to be between 0.6 and 1.0 μm for T2SL materials at high temperatures (>250 K). A comparison of responsivities between current matched ICIPs with varied absorber thicknesses and noncurrent-matched ICIPs with equal absorbers shows that the current-matching among cascade stages is necessary to maximize responsivity. Additionally, electrical gain exceeding unity is demonstrated in these detectors in the reverse-illumination configuration.

A quantum diffractor for thermal flux

NASA Astrophysics Data System (ADS)

José Martínez-Pérez, Maria; Giazotto, Francesco

2014-04-01

Macroscopic phase coherence between weakly coupled superconductors leads to peculiar interference phenomena. Among these, magnetic flux-driven diffraction might be produced, in full analogy to light diffraction through a rectangular slit. This can be experimentally revealed by the electric current and, notably, also by the heat current transmitted through the circuit. The former was observed more than 50 years ago and represented the first experimental evidence of the phase-coherent nature of the Josephson effect, whereas the second one was still lacking. Here we demonstrate the existence of heat diffraction by measuring the modulation of the electronic temperature of a small metallic electrode nearby-contacted to a thermally biased short Josephson junction subjected to an in-plane magnetic field. The observed temperature dependence exhibits symmetry under magnetic flux reversal, and clear resemblance with a Fraunhofer-like modulation pattern. Our approach, joined to widespread methods for phase-biasing superconducting circuits, might represent an effective tool for controlling the thermal flux in nanoscale devices.

Flux-trapping during the formation of field-reversed configurations

NASA Astrophysics Data System (ADS)

Armstrong, W. T.; Harding, D. G.; Crawford, E. A.; Hoffman, A. L.

1982-11-01

Flux-trapping during the early formation phases of a field-reversed configuration has been studied experimentally on the field-reversed theta-pinch TRX-1. An annular z-pinch preionizer was employed to permit ionization at high values of reverse-bias flux. Contrary to previous analysis, the rate of flux loss was not governed exclusively by inertially limited plasma convection to the tube walls. At high reverse flux levels, a pressure bearing sheath was observed to form at the tube walls and the flux loss was restricted by resistive diffusion across this sheath. The characteristic time for flux loss was 0.08rt (cm) μsec, independent of the bias field and independent of the fill pressure for fill pressures above 15 mTorr D2. Octopole barrier fields were found to be effective in limiting the inertially governed flux loss at very early times before the wall sheath formed.

Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Related II-VI Compounds Held in San Diego, California on October 3, 4, 5, 1989

DTIC Science & Technology

1989-11-01

spatially scanned to change the position of the laser beam on the diode. The diode leakage current at 100 mV reverse bias and at 77K was measured as a...by damage incurred at all the positions the beam has passed until this pohic during the scan. The current scan is transformed into a false color (or a...report are those of he authgr(i).and sh uld not be consted as an official De artment of the Army position , 17. COSATI CODES IS. SUBJECT TERI (C&cWnuan

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

PubMed

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-06-27

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

A compact model of the reverse gate-leakage current in GaN-based HEMTs

NASA Astrophysics Data System (ADS)

Ma, Xiaoyu; Huang, Junkai; Fang, Jielin; Deng, Wanling

2016-12-01

The gate-leakage behavior in GaN-based high electron mobility transistors (HEMTs) is studied as a function of applied bias and temperature. A model to calculate this current is given, which shows that trap-assisted tunneling, trap-assisted Frenkel-Poole (FP) emission, and direct Fowler-Nordheim (FN) tunneling have their main contributions at different electric field regions. In addition, the proposed model clearly illustrates the effect of traps and their assistance to the gate leakage. We have demonstrated the validity of the model by comparisons between model simulation results and measured experimental data of HEMTs, and a good agreement is obtained.

Augmented Hebbian reweighting accounts for accuracy and induced bias in perceptual learning with reverse feedback

PubMed Central

Liu, Jiajuan; Dosher, Barbara Anne; Lu, Zhong-Lin

2015-01-01

Using an asymmetrical set of vernier stimuli (−15″, −10″, −5″, +10″, +15″) together with reverse feedback on the small subthreshold offset stimulus (−5″) induces response bias in performance (Aberg & Herzog, 2012; Herzog, Eward, Hermens, & Fahle, 2006; Herzog & Fahle, 1999). These conditions are of interest for testing models of perceptual learning because the world does not always present balanced stimulus frequencies or accurate feedback. Here we provide a comprehensive model for the complex set of asymmetric training results using the augmented Hebbian reweighting model (Liu, Dosher, & Lu, 2014; Petrov, Dosher, & Lu, 2005, 2006) and the multilocation integrated reweighting theory (Dosher, Jeter, Liu, & Lu, 2013). The augmented Hebbian learning algorithm incorporates trial-by-trial feedback, when present, as another input to the decision unit and uses the observer's internal response to update the weights otherwise; block feedback alters the weights on bias correction (Liu et al., 2014). Asymmetric training with reversed feedback incorporates biases into the weights between representation and decision. The model correctly predicts the basic induction effect, its dependence on trial-by-trial feedback, and the specificity of bias to stimulus orientation and spatial location, extending the range of augmented Hebbian reweighting accounts of perceptual learning. PMID:26418382

Augmented Hebbian reweighting accounts for accuracy and induced bias in perceptual learning with reverse feedback.

PubMed

Liu, Jiajuan; Dosher, Barbara Anne; Lu, Zhong-Lin

2015-01-01

Using an asymmetrical set of vernier stimuli (-15″, -10″, -5″, +10″, +15″) together with reverse feedback on the small subthreshold offset stimulus (-5″) induces response bias in performance (Aberg & Herzog, 2012; Herzog, Eward, Hermens, & Fahle, 2006; Herzog & Fahle, 1999). These conditions are of interest for testing models of perceptual learning because the world does not always present balanced stimulus frequencies or accurate feedback. Here we provide a comprehensive model for the complex set of asymmetric training results using the augmented Hebbian reweighting model (Liu, Dosher, & Lu, 2014; Petrov, Dosher, & Lu, 2005, 2006) and the multilocation integrated reweighting theory (Dosher, Jeter, Liu, & Lu, 2013). The augmented Hebbian learning algorithm incorporates trial-by-trial feedback, when present, as another input to the decision unit and uses the observer's internal response to update the weights otherwise; block feedback alters the weights on bias correction (Liu et al., 2014). Asymmetric training with reversed feedback incorporates biases into the weights between representation and decision. The model correctly predicts the basic induction effect, its dependence on trial-by-trial feedback, and the specificity of bias to stimulus orientation and spatial location, extending the range of augmented Hebbian reweighting accounts of perceptual learning.

Gate-bias and temperature dependence of charge transport in dinaphtho[2,3-b:2‧,3‧-d]thiophene thin-film transistors with MoO3/Au electrodes

NASA Astrophysics Data System (ADS)

Shaari, Safizan; Naka, Shigeki; Okada, Hiroyuki

2018-04-01

We investigated the gate-bias and temperature dependence of the voltage-current (V-I) characteristics of dinaphtho[2,3-b:2‧,3‧-d]thiophene with MoO3/Au electrodes. The insertion of the MoO3 layer significantly improved the device performance. The temperature dependent V-I characteristics were evaluated and could be well fitted by the Schottky thermionic emission model with barrier height under forward- and reverse-biased regimes in the ranges of 33-57 and 49-73 meV, respectively. However, at a gate voltage of 0 V, at which a small activation energy was obtained, we needed to consider another conduction mechanism at the grain boundary. From the obtained results, we concluded that two possible conduction mechanisms governed the charge injection at the metal electrode-organic semiconductor interface: the Schottky thermionic emission model and the conduction model in the organic thin-film layer and grain boundary.

Local electronic and optical behavior of ELO a-plane GaN

NASA Astrophysics Data System (ADS)

Baski, A. A.; Moore, J. C.; Ozgur, U.; Kasliwal, V.; Ni, X.; Morkoc, H.

2007-03-01

Conductive atomic force microscopy (CAFM) and near-field optical microscopy (NSOM) were used to study a-plane GaN films grown via epitaxial lateral overgrowth (ELO). The ELO films were prepared by metal organic chemical vapor deposition on a patterned SiO2 layer with 4-μm wide windows, which was deposited on a GaN template grown on r-plane sapphire. The window regions of the coalesced ELO films appear as depressions with a high density of surface pits. At reverse bias below 12 V, very low uniform conduction (2 pA) is seen in the window regions. Above 20 V, a lower-quality sample shows localized sites inside the window regions with significant leakage, indicating a correlation between the presence of surface pits and leakage sites. Room temperature NSOM studies also suggest a greater density of surface terminated dislocations in the window regions, while wing regions explicitly show enhanced optical quality of the overgrown GaN. The combination of CAFM and NSOM data therefore indicates a correlation between the presence of surface pits, localized reverse-bias current leakage, and low PL intensity in the window regions.

Overview of C-2W Field-Reversed Configuration Experimental Program

NASA Astrophysics Data System (ADS)

Gota, H.; Binderbauer, M. W.; Tajima, T.; Putvinski, S.; Tuszewski, M.; Dettrick, S.; Korepanov, S.; Romero, J.; Smirnov, A.; Song, Y.; Thompson, M. C.; van Drie, A.; Yang, X.; Ivanov, A. A.; TAE Team

2017-10-01

Tri Alpha Energy's research has been devoted to producing a high temperature, stable, long-lived field-reversed configuration (FRC) plasma state by neutral-beam injection (NBI) and edge biasing/control. C-2U experiments have demonstrated drastic improvements in particle and energy confinement properties of FRC's, and the plasma performance obtained via 10 MW NBI has achieved plasma sustainment of up to 5 ms and plasma (diamagnetism) lifetimes of 10 + ms. The emerging confinement scaling, whereby electron energy confinement time is proportional to a positive power of the electron temperature, is very attractive for higher energy plasma confinement; accordingly, verification of the observed Te scaling law will be a key future research objective. The new experimental device, C-2W (now also called ``Norman''), has the following key subsystem upgrades from C-2U: (i) higher injected power, optimum energies, and extended pulse duration of the NBI system; (ii) installation of inner divertors with upgraded edge-biasing systems; (iii) fast external equilibrium/mirror-coil current ramp-up capability; and (iv) installation of trim/saddle coils for active feedback control of the FRC plasma. This paper will review highlights of the C-2W program.

Al{sub x}Ga{sub 1-x}N-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cicek, E.; McClintock, R.; Cho, C. Y.

2013-11-04

We report on high performance Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector (PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is grown via metalorganic chemical vapor deposition. Then, we systematically optimized the device design and material doping through the growth and processing of multiple devices. After optimization, uniform and solar-blind operation is observed throughout the array; at the peak detection wavelength of 275 nm, 729 μm{sup 2} area PD showed unbiased peak external quantum efficiency and responsivity of ∼80% and ∼176 mA/W, respectively, increasing to 89% under 5 V of reverse bias. Taking the reflection loses into consideration,more » the internal quantum efficiency of these optimized PD can be estimated to be as high as ∼98%. The visible rejection ratio measured to be more than six orders of magnitude. Electrical measurements yielded a low-dark current density: <2 × 10{sup −9} A/cm{sup 2}, at 10 V of reverse bias.« less

Observation of long-lived persistent spin polarization in a topological insulator

NASA Astrophysics Data System (ADS)

Tian, Jifa; Hong, Seokmin; Miotkowski, Ireneusz; Datta, Supriyo; Chen, Yong P.

3D Topological insulators (TI), featuring helically spin-momentum-locked topological surface states (TSS), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current induced electronic spin polarization that may be used for all electrical spin generation and injection. Here, we report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large ``writing'' current applied for an extended time. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.

Fabrication of n-ZnO:Al/p-Si(100) heterojunction diode and its characterization

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Dharmaprakash, S. M.; Byrappa, K.

2018-04-01

Aluminum doped ZnO (n-ZnO:Al) nanostructured thin films were grown on ZnO seed layer coated p-Si(100) substrate employing hydrothermal technique. X-ray diffraction pattern revealed that the ZnO:Al film possess hexagonal wurtzite structure with preferential orientation along (002) direction. Photoluminescence of the sample displayed near band edge emission peak in the ultra-violet region and defect level emission peak in the visible region. The as grown thin film was used in the fabrication of n-ZnO:Al/p-Si heterojunction diode and the room temperature current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied. The heterojunction exhibited fairly good rectification with an ideality of 2.49 and reverse saturation current of 2 nA. The barrier height was found to be 0.668 eV from the I-V measurements. The C-V measurements showed a decrease in the capacitance of the heterojunction with an increase in the reverse bias voltage.

Theoretical analysis of nBn infrared photodetectors

NASA Astrophysics Data System (ADS)

Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2017-09-01

The depletion and surface leakage dark current suppression properties of unipolar barrier device architectures such as the nBn have been highly beneficial for III-V semiconductor-based infrared detectors. Using a one-dimensional drift-diffusion model, we theoretically examine the effects of contact doping, minority carrier lifetime, and absorber doping on the dark current characteristics of nBn detectors to explore some basic aspects of their operation. We found that in a properly designed nBn detector with highly doped excluding contacts the minority carriers are extracted to nonequilibrium levels under reverse bias in the same manner as the high operating temperature (HOT) detector structure. Longer absorber Shockley-Read-Hall (SRH) lifetimes result in lower diffusion and depletion dark currents. Higher absorber doping can also lead to lower diffusion and depletion dark currents, but the benefit should be weighted against the possibility of reduced diffusion length due to shortened SRH lifetime. We also briefly examined nBn structures with unintended minority carrier blocking barriers due to excessive n-doping in the unipolar electron barrier, or due to a positive valence band offset between the barrier and the absorber. Both types of hole blocking structures lead to higher turn-on bias, although barrier n-doping could help suppress depletion dark current.

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru

2013-11-15

The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states ofmore » quantum dots at the type-II InSb/InAs heterointerface.« less

Does reverse causality explain the relationship between diet and depression?

PubMed

Jacka, Felice N; Cherbuin, Nicolas; Anstey, Kaarin J; Butterworth, Peter

2015-04-01

Observational studies have repeatedly demonstrated relationships between habitual diet quality and depression. However, whilst reverse causality has not been the identified mechanism for these associations in prospective studies, the relationship between diet and depression is likely complex and bidirectional. Thus explicit investigation of the reverse causality hypothesis is warranted. Data were drawn from the Personality and Total Health (PATH) Through Life Study, a longitudinal community survey following three age cohorts from Australia. Analyses evaluated the relationships between past depression and treatment, current depressive symptoms and dietary patterns. Individuals with current depression had lower scores on a healthy dietary pattern; however, those who had been previously depressed and sought treatment had higher scores on the healthy dietary pattern at the later baseline assessment. Moreover, those who had reported prior, but not current, depression also had lower scores on the western dietary pattern than those without prior depression, regardless of whether they had been previously treated for their symptoms. Self-report data and possible recall bias limit our conclusions. In this study, prior depression was associated with better quality diets at the later time point. Thus, while current depression is associated with poorer dietary habits, a history of depression may prompt healthier dietary behaviours in the long term. Given the demonstrated relationships between diet quality and depressive illness, clinicians should advocate dietary improvement for their patients with depression and should not be pessimistic about the likelihood of adherence to such recommendations. Copyright © 2015 Elsevier B.V. All rights reserved.

Developmental Trajectory of Pseudoneglect in Adults Using the Greyscales Task

ERIC Educational Resources Information Center

Friedrich, Trista E.; Hunter, Paulette V.; Elias, Lorin J.

2016-01-01

Neurologically healthy adults display a reliable but slight leftward spatial bias, and this bias appears to change with age (Jewell & McCourt, 2000). Studies using line bisection and the landmark task to investigate pseudoneglect in participants over 60 years of age have shown suppression and near reversal of the leftward response bias. The…

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Musolino, M.; Treeck, D. van, E-mail: treeck@pdi-berlin.de; Tahraoui, A.

2016-01-28

We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of 570 ± 20 and 840 ± 30 meV below the conduction band minimum. The physical origin of these deep level states is discussed. Themore » temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.« less

Topologically robust sound propagation in an angular-momentum-biased graphene-like resonator lattice

NASA Astrophysics Data System (ADS)

Khanikaev, Alexander B.; Fleury, Romain; Mousavi, S. Hossein; Alù, Andrea

2015-10-01

Topological insulators do not allow conduction in the bulk, yet they support edge modes that travel along the boundary only in one direction, determined by the carried electron spin, with inherent robustness to defects and disorder. Topological insulators have inspired analogues in photonics and optics, in which one-way edge propagation in topologically protected two-dimensional materials is achieved breaking time-reversal symmetry with a magnetic bias. Here, we introduce the concept of topological order in classical acoustics, realizing robust topological protection and one-way edge propagation of sound in a suitably designed resonator lattice biased with angular momentum, forming the acoustic analogue of a magnetically biased graphene layer. Extending the concept of an acoustic nonreciprocal circulator based on angular-momentum bias, time-reversal symmetry is broken here using moderate rotational motion of air within each element of the lattice, which takes the role of the electron spin in determining the direction of modal edge propagation.

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. Anthony; Salupo, Carl S.; Matus, Lawrence G.

1994-01-01

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

More reasons to be straightforward: findings and norms for two scales relevant to social anxiety.

PubMed

Rodebaugh, Thomas L; Heimberg, Richard G; Brown, Patrick J; Fernandez, Katya C; Blanco, Carlos; Schneier, Franklin R; Liebowitz, Michael R

2011-06-01

The validity of both the Social Interaction Anxiety Scale and Brief Fear of Negative Evaluation scale has been well-supported, yet the scales have a small number of reverse-scored items that may detract from the validity of their total scores. The current study investigates two characteristics of participants that may be associated with compromised validity of these items: higher age and lower levels of education. In community and clinical samples, the validity of each scale's reverse-scored items was moderated by age, years of education, or both. The straightforward items did not show this pattern. To encourage the use of the straightforward items of these scales, we provide normative data from the same samples as well as two large student samples. We contend that although response bias can be a substantial problem, the reverse-scored questions of these scales do not solve that problem and instead decrease overall validity. Copyright © 2011 Elsevier Ltd. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fertig, Fabian, E-mail: fabian.fertig@ise.fraunhofer.de; Greulich, Johannes; Rein, Stefan

We present a spatially resolved method to determine the short-circuit current density of crystalline silicon solar cells by means of lock-in thermography. The method utilizes the property of crystalline silicon solar cells that the short-circuit current does not differ significantly from the illuminated current under moderate reverse bias. Since lock-in thermography images locally dissipated power density, this information is exploited to extract values of spatially resolved current density under short-circuit conditions. In order to obtain an accurate result, one or two illuminated lock-in thermography images and one dark lock-in thermography image need to be recorded. The method can be simplifiedmore » in a way that only one image is required to generate a meaningful short-circuit current density map. The proposed method is theoretically motivated, and experimentally validated for monochromatic illumination in comparison to the reference method of light-beam induced current.« less

Population genetic structure and direct observations reveal sex-reversed patterns of dispersal in a cooperative bird.

PubMed

Harrison, Xavier A; York, Jennifer E; Young, Andrew J

2014-12-01

Sex-biased dispersal is pervasive and has diverse evolutionary implications, but the fundamental drivers of dispersal sex biases remain unresolved. This is due in part to limited diversity within taxonomic groups in the direction of dispersal sex biases, which leaves hypothesis testing critically dependent upon identifying rare reversals of taxonomic norms. Here, we use a combination of observational and genetic data to demonstrate a rare reversal of the avian sex bias in dispersal in the cooperatively breeding white-browed sparrow weaver (Plocepasser mahali). Direct observations revealed that (i) natal philopatry was rare, with both sexes typically dispersing locally to breed, and (ii), unusually for birds, males bred at significantly greater distances from their natal group than females. Population genetic analyses confirmed these patterns, as (i) corrected Assignment index (AIc), FST tests and isolation-by-distance metrics were all indicative of longer dispersal distances among males than females, and (ii) spatial autocorrelation analysis indicated stronger within-group genetic structure among females than males. Examining the spatial scale of extra-group mating highlighted that the resulting 'sperm dispersal' could have acted in concert with individual dispersal to generate these genetic patterns, but gamete dispersal alone cannot account entirely for the sex differences in genetic structure observed. That leading hypotheses for the evolution of dispersal sex biases cannot readily account for these sex-reversed patterns of dispersal in white-browed sparrow weavers highlights the continued need for attention to alternative explanations for this enigmatic phenomenon. We highlight the potential importance of sex differences in the distances over which dispersal opportunities can be detected. © 2014 The Authors. Molecular Ecology Published by John Wiley & Sons Ltd.

Abstinence reverses EEG-indexed attention bias between drug-related and pleasant stimuli in cocaine-addicted individuals

PubMed Central

Parvaz, Muhammad A.; Moeller, Scott J.; Malaker, Pias; Sinha, Rajita; Alia-Klein, Nelly; Goldstein, Rita Z.

2017-01-01

Background Increased attention bias toward drug-related cues over non–drug-related intrinsically pleasant reinforcers is a hallmark of drug addiction. In this study we used the late positive potential (LPP) to investigate whether such increased attention bias toward drug-related relative to non–drug-related cues changes over a protracted period of reduced drug use in treatment-seeking individuals with a cocaine use disorder (CUD). Methods Treatment-seeking individuals with CUD and matched healthy controls passively viewed a series of pleasant, neutral and drug-related pictures while their event-related potentials were recorded at baseline (≤ 3 weeks after treatment initiation) and at 6-month follow-up (only CUD). Results We included 19 treatment-seeking individuals with CUD and 18 matched controls in our analyses. The results showed a reversal in attention bias (i.e., LPP amplitude) from baseline (i.e., drug > pleasant) to follow-up (i.e., pleasant > drug) driven by an increased attentional engagement with pleasant pictures; this LPP reversal was paralleled by a concomitant reduction in self-reported wanting and craving for cocaine in the CUD group. Furthermore, reduced attention bias toward drug-related cues (relative to pleasant cues) was correlated with longer duration of abstinence at baseline, and the extent of its longitudinal reversal was correlated with decreased craving at follow-up, providing support for abstinence as a putative mechanism of this bottom–up attentional change. Limitations A limited sample size and the use of the same set of pictures at baseline and follow-up were the major limitations of this study. Conclusion Results collectively indicate that, by tracking with drug abstinence, LPP in response to drug-related relative to pleasant cues may serve as an indicator of clinical progress in treatment-seeking individuals with CUD. PMID:28245173

Abstinence reverses EEG-indexed attention bias between drug-related and pleasant stimuli in cocaine-addicted individuals.

PubMed

Parvaz, Muhammad A; Moeller, Scott J; Malaker, Pias; Sinha, Rajita; Alia-Klein, Nelly; Goldstein, Rita Z

2017-03-01

Increased attention bias toward drug-related cues over non-drug-related intrinsically pleasant reinforcers is a hallmark of drug addiction. In this study we used the late positive potential (LPP) to investigate whether such increased attention bias toward drug-related relative to non-drug-related cues changes over a protracted period of reduced drug use in treatment-seeking individuals with a cocaine use disorder (CUD). Treatment-seeking individuals with CUD and matched healthy controls passively viewed a series of pleasant, neutral and drug-related pictures while their event-related potentials were recorded at baseline (≤ 3 weeks after treatment initiation) and at 6-month follow-up (only CUD). We included 19 treatment-seeking individuals with CUD and 18 matched controls in our analyses. The results showed a reversal in attention bias (i.e., LPP amplitude) from baseline (i.e., drug > pleasant) to follow-up (i.e., pleasant > drug) driven by an increased attentional engagement with pleasant pictures; this LPP reversal was paralleled by a concomitant reduction in self-reported wanting and craving for cocaine in the CUD group. Furthermore, reduced attention bias toward drug-related cues (relative to pleasant cues) was correlated with longer duration of abstinence at baseline, and the extent of its longitudinal reversal was correlated with decreased craving at follow-up, providing support for abstinence as a putative mechanism of this bottom-up attentional change. A limited sample size and the use of the same set of pictures at baseline and follow-up were the major limitations of this study. Results collectively indicate that, by tracking with drug abstinence, LPP in response to drug-related relative to pleasant cues may serve as an indicator of clinical progress in treatment-seeking individuals with CUD.

Direction of flagellar rotation in bacterial cell envelopes.

PubMed Central

Ravid, S; Eisenbach, M

1984-01-01

Cell envelopes with functional flagella, isolated from wild-type strains of Escherichia coli and Salmonella typhimurium by formation of spheroplasts with penicillin and subsequent osmotic lysis, demonstrate counterclockwise (CCW)-biased rotation when energized with an electron donor for respiration, DL-lactate. Since the direction of flagellar rotation in bacteria is central to the expression of chemotaxis, we studied the cause of this bias. Our main observations were: (i) spheroplasts acquired a clockwise (CW) bias if instead of being lysed they were further incubated with penicillin; (ii) repellents temporarily caused CW rotation of tethered bacteria and spheroplasts but not of their derived cell envelopes; (iii) deenergizing CW-rotating cheV bacteria by KCN or arsenate treatment caused CCW bias; (iv) cell envelopes isolated from CW-rotating cheC and cheV mutants retained the CW bias, unlike envelopes isolated from cheB and cheZ mutants, which upon cytoplasmic release lost this bias and acquired CCW bias; and (v) an inwardly directed, artificially induced proton current rotated tethered envelopes in CCW direction, but an outwardly directed current was unable to rotate the envelopes. It is concluded that (i) a cytoplasmic constituent is required for the expression of CW rotation (or repression of CCW rotation) in strains which are not defective in the switch; (ii) in the absence of this cytoplasmic constituent, the motor is not reversible in such strains, and it probably is mechanically constricted so as to permit CCW sense of rotation only; (iii) the requirement of CW rotation for ATP is not at the level of the motor or the switch but at one of the preceding functional steps of the chemotaxis machinery; (iv) the cheC and cheV gene products are associated with the cytoplasmic membrane; and (v) direct interaction between the switch-motor system and the repellent sensors is improbable. Images PMID:6370958

Control of ion gyroscale fluctuations via electrostatic biasing and sheared E×B flow in the C-2 field reversed configuration

NASA Astrophysics Data System (ADS)

Schmitz, L.; Ruskov, E.; Deng, B. H.; Binderbauer, M.; Tajima, T.; Gota, H.; Tuszewski, M.

2016-03-01

Control of radial particle and thermal transport is instrumental for achieving and sustaining well-confined high-β plasma in a Field-Reversed Configuration (FRC). Radial profiles of low frequency ion gyro-scale density fluctuations (0.5≤kρs≤40), consistent with drift- or drift-interchange modes, have been measured in the scrape-off layer (SOL) and core of the C-2 Field-Reversed Configuration (FRC), together with the toroidal E×B velocity. It is shown here that axial electrostatic SOL biasing controls and reduces gyro-scale density fluctuations, resulting in very low FRC core fluctuation levels. When the radial E×B flow shearing rate decreases below the turbulence decorrelation rate, fluctuation levels increase substantially, concomitantly with onset of the n=2 instability and rapid loss of diamagnetism. Low turbulence levels, improved energy/particle confinement and substantially increased FRC life times are achieved when E×B shear near the separatrix is maintained via axial SOL biasing using an annular washer gun.

Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Cremona, M.; Achete, C. A.

2011-01-01

Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

Spin-flop coupling and exchange anisotropy in ferromagnetic/antiferromagnetic bilayers

NASA Astrophysics Data System (ADS)

Xu, Xiao-Yong; Hu, Jing-Guo

2009-03-01

By investigating the antiferromagnetic spin configuration, the exchange anisotropy and the interfacial spin-flop coupling in ferromagnetic/antiferromagnetic (FM/AF) bilayers have been discussed in detail. The results show that there are four possible cases for the AF spins, namely the reversible recovering case, irreversible half-rotating case, irreversible reversing and irreversible half-reversing cases. Moreover, the realization of the cases strongly depends on interface quadratic coupling, interface spin-flop (biquadratic) coupling and AF thickness. The magnetic phase diagram in terms of the AF thickness tAF, the interfacial bilinear coupling J1 and the spin-flop coupling J2 has been constructed. The corresponding critical parameters in which the exchange bias will occur or approach saturation have been also presented. Specially, the small spin-flop exchange coupling may result in an exchange bias without the interfacial bilinear exchange coupling. However, in general, the spin-flop exchange coupling can weaken or eliminate the exchange bias, but always enhances the coercivity greatly.

Unusual magnetoelectric memory and polarization reversal in the kagome staircase compound N i3V2O8

NASA Astrophysics Data System (ADS)

Liu, Y. J.; Wang, J. F.; He, Z. Z.; Lu, C. L.; Xia, Z. C.; Ouyang, Z. W.; Liu, C. B.; Chen, R.; Matsuo, A.; Kohama, Y.; Kindo, K.; Tokunaga, M.

2018-05-01

We study the electric polarization of the kagome staircase N i3V2O8 in magnetic fields up to 30 T and report a magnetoelectric memory effect controlled by bias electric fields. The explored ferroelectric phase in 19 -24 T is electrically controlled, whereas the ferroelectric phase in 2 -11 T exhibits unusual memory effects. We determine a characteristic critical magnetic field H3=11 T , below which strong memory exists and the polarization is frozen even in opposite bias fields. But when magnetic fields exceed H3, the frozen polarization is released and polarization reversal appears by tuning bias electric fields. We ascribe these phenomena to the pinning-depinning mechanism: nucleation and the accompanying pinning of chiral domain walls cooperatively induce the frozen behavior; the polarization reversal results from the depinning through the ferroelectrtic-to-paraelectric phase transition in high magnetic fields. Our experimental results reveal that the first-order phase transition plays an important role in these unusual memory effects.

Electronic transport properties of a quinone-based molecular switch

NASA Astrophysics Data System (ADS)

Zheng, Ya-Peng; Bian, Bao-An; Yuan, Pei-Pei

2016-09-01

In this paper, we carried out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a quinone-based molecule sandwiched between two Au electrodes. The molecular switch can be reversibly switched between the reduced hydroquinone (HQ) and oxidized quinone (Q) states via redox reactions. The switching behavior of two forms is analyzed through their I- V curves, transmission spectra and molecular projected self-consistent Hamiltonian at zero bias. Then we discuss the transmission spectra of the HQ and Q forms at different bias, and explain the oscillation of current according to the transmission eigenstates of LUMO energy level for Q form. The results suggest that this kind of a quinone-based molecule is usable as one of the good candidates for redox-controlled molecular switches.

Assessing the utility of bipolar membranes for use in photoelectrochemical water-splitting cells.

PubMed

Vargas-Barbosa, Nella M; Geise, Geoffrey M; Hickner, Michael A; Mallouk, Thomas E

2014-11-01

Membranes are important in water-splitting solar cells because they prevent crossover of hydrogen and oxygen. Here, bipolar membranes (BPMs) were tested as separators in water electrolysis cells. Steady-state membrane and solution resistances, electrode overpotentials, and pH gradients were measured at current densities relevant to solar photoelectrolysis. Under forward bias conditions, electrodialysis of phosphate buffer ions creates a pH gradient across a BPM. Under reverse bias, the BPM can maintain a constant buffer pH on both sides of the cell, but a large membrane potential develops. Thus, the BPM does not present a viable solution for electrolysis in buffered electrolytes. However, the membrane potential is minimized when the anode and cathode compartments of the cell contain strongly basic and acidic electrolytes, respectively. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Social Comparison and Confidence: When Thinking You're Better than Average Predicts Overconfidence (And when It Does Not)

ERIC Educational Resources Information Center

Larrick, Richard P.; Burson, Katherine A.; Soll, Jack B.

2007-01-01

A common social comparison bias--the better-than-average-effect--is frequently described as psychologically equivalent to the individual-level judgment bias known as overconfidence. However, research has found "Hard-easy" effects for each bias that yield a seemingly paradoxical reversal: Hard tasks tend to produce overconfidence but…

Rightward Biases in Free-Viewing Visual Bisection Tasks: Implications for Leftward Responses Biases on Similar Tasks

ERIC Educational Resources Information Center

Elias, Lorin J.; Robinson, Brent; Saucier, Deborah M.

2005-01-01

Neurologically normal individuals exhibit strong leftward response biases during free-viewing perceptual judgments of brightness, quantity, and size. When participants view two mirror-reversed objects and they are forced to choose which object appears darker, more numerous, or larger, the stimulus with the relevant feature on the left side is…

Is the Allegiance Effect an Epiphenomenon of True Efficacy Differences between Treatments? A Meta-Analysis

ERIC Educational Resources Information Center

Munder, Thomas; Fluckiger, Christoph; Gerger, Heike; Wampold, Bruce E.; Barth, Jurgen

2012-01-01

Many meta-analyses of comparative outcome studies found a substantial association of researcher allegiance (RA) and relative treatment effects. Therefore, RA is regarded as a biasing factor in comparative outcome research (RA bias hypothesis). However, the RA bias hypothesis has been criticized as causality might be reversed. That is, RA might be…

Silicon nanowire array architecture for heterojunction electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua; Brus, V. V.; Mostovyi, A. I.

2017-04-15

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

Salt-Doped Polymer Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Gautier, Bathilde

Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

NASA Astrophysics Data System (ADS)

Mostovyi, Andrii I.; Solovan, Mykhailo M.; Brus, Viktor V.; Pullerits, Toǧnu; Maryanchuk, Pavlo D.

2018-01-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωṡcm, ρ2=10 Ωṡcm, ρ3=40 Ωṡcm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

A more than six orders of magnitude UV-responsive organic field-effect transistor utilizing a benzothiophene semiconductor and Disperse Red 1 for enhanced charge separation.

PubMed

Smithson, Chad S; Wu, Yiliang; Wigglesworth, Tony; Zhu, Shiping

2015-01-14

A more than six orders of magnitude UV-responsive organic field-effect transistor is developed using a benzothiophene (BTBT) semiconductor and strong donor-acceptor Disperse Red 1 as the traps to enhance charge separation. The device can be returned to its low drain current state by applying a short gate bias, and is completely reversible with excellent stability under ambient conditions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low bias negative differential conductance and reversal of current in coupled quantum dots in different topological configurations

NASA Astrophysics Data System (ADS)

Devi, Sushila; Brogi, B. B.; Ahluwalia, P. K.; Chand, S.

2018-06-01

Electronic transport through asymmetric parallel coupled quantum dot system hybridized between normal leads has been investigated theoretically in the Coulomb blockade regime by using Non-Equilibrium Green Function formalism. A new decoupling scheme proposed by Rabani and his co-workers has been adopted to close the chain of higher order Green's functions appearing in the equations of motion. For resonant tunneling case; the calculations of current and differential conductance have been presented during transition of coupled quantum dot system from series to symmetric parallel configuration. It has been found that during this transition, increase in current and differential conductance of the system occurs. Furthermore, clear signatures of negative differential conductance and negative current appear in series case, both of which disappear when topology of system is tuned to asymmetric parallel configuration.

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinverni, M., E-mail: marco.malinverni@epfl.ch; Martin, D.; Grandjean, N.

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to ∼10{sup 20 }cm{sup −3}, thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g., <5 × 10{sup −5} A cm{sup −2} at reverse bias of 10 V. Under forward bias, the voltage is 3.3 V and 4.8 V for current densities of 20 A cm{sup −2} and 2000 A cm{sup −2}, respectively. The specific series resistance of the whole device ismore » 3.7 × 10{sup −4} Ω cm{sup 2}. Then micro-light emitting diodes (μ-LEDs) featuring buried TJs are fabricated. Excellent current confinement is demonstrated together with homogeneous electrical injection, as seen on electroluminescence mapping. Finally, the I-V characteristics of μ-LEDs with various diameters point out the role of the access resistance at the current aperture edge.« less

Intrinsic paleointensity bias and the long-term history of the geodynamo.

PubMed

Smirnov, Aleksey V; Kulakov, Evgeniy V; Foucher, Marine S; Bristol, Katie E

2017-02-01

Many geodynamo models predict an inverse relationship between geomagnetic reversal frequency and field strength. However, most of the absolute paleointensity data, obtained predominantly by the Thellier method from bulk volcanic rocks, fail to confirm this relationship. Although low paleointensities are commonly observed during periods of high reversal rate (notably, in the late Jurassic), higher than present-day intensity values are rare during periods of no or few reversals (superchrons). We have identified a fundamental mechanism that results in a pervasive and previously unrecognized low-field bias that affects most paleointensity data in the global database. Our results provide an explanation for the discordance between the experimental data and numerical models, and lend additional support to an inverse relationship between the reversal rate and field strength as a fundamental property of the geodynamo. We demonstrate that the accuracy of future paleointensity analyses can be improved by integration of the Thellier protocol with low-temperature demagnetizations.

Intrinsic paleointensity bias and the long-term history of the geodynamo

PubMed Central

Smirnov, Aleksey V.; Kulakov, Evgeniy V.; Foucher, Marine S.; Bristol, Katie E.

2017-01-01

Many geodynamo models predict an inverse relationship between geomagnetic reversal frequency and field strength. However, most of the absolute paleointensity data, obtained predominantly by the Thellier method from bulk volcanic rocks, fail to confirm this relationship. Although low paleointensities are commonly observed during periods of high reversal rate (notably, in the late Jurassic), higher than present-day intensity values are rare during periods of no or few reversals (superchrons). We have identified a fundamental mechanism that results in a pervasive and previously unrecognized low-field bias that affects most paleointensity data in the global database. Our results provide an explanation for the discordance between the experimental data and numerical models, and lend additional support to an inverse relationship between the reversal rate and field strength as a fundamental property of the geodynamo. We demonstrate that the accuracy of future paleointensity analyses can be improved by integration of the Thellier protocol with low-temperature demagnetizations. PMID:28246644

Modeling of agent-based complex network under cyber-violence

NASA Astrophysics Data System (ADS)

Huang, Chuanchao; Hu, Bin; Jiang, Guoyin; Yang, Ruixian

2016-09-01

Public opinion reversal arises frequently in modern society, due to the continual interactions between individuals and their surroundings. To explore the underlying mechanism of the interesting social phenomenon, we introduce here a new model which takes the relationship between the individual cognitive bias and their corresponding choice behavior into account. Experimental results show that the proposed model can provide an accurate description of the entire process of public opinion reversal under the internet environment and the distribution of cognitive bias plays the role of a measure for the reversal probability. In particular, the application to cyber violence, a typical example of public opinion reversal, suggests that public opinion is prone to be seriously affected by the spread of misleading and harmful information. Furthermore, our model is very robust and thus can be employed to other empirical studies that concern the sudden change of public and personal opinion on internet.

Biasing experiments on the Advanced Toroidal Facility

NASA Astrophysics Data System (ADS)

Uckan, T.; Isler, R. C.; Jernigan, T. C.; Lyon, J. F.; Mioduszewski, P. K.; Murakami, M.; Rasmussen, D. A.; Wilgen, J. B.; Aceto, S. C.; Zielinski, J. J.

1992-09-01

Biasing experiments have been carried out in 1 T plasmas with approximately 200 kW of electron cyclotron heating (ECH) in the current-fire Advanced Toroidal Facility (ATF) torsatron. Two rail limiters, one at the top and one at the bottom of the device, located at the last closed flux surface (LCFS), are, biased at positive and negative potentials with respect to the vacuum vessel. When the limiters are positively biased at up to 300 V and the plasma density is controlled with a significantly reduced gas feed, the H(sub alpha) radiation from both the limiter and the wall drops, indicating reduced particle recycling as a result of improved particle confinement. For bias voltages around +100 V, there is almost no change of plasma stored energy W(sub p), but W(sub p) then drops with the higher biasing voltages. Positive biasing has caused the core plasma density profile to become peaked and the electric field to become more negative inside the LCFS. At the same time, edge plasma fluctuations are reduced significantly and their power spectrum becomes less broad. The propagation direction of these electrostatic fluctuations reverses to the ion diamagnetic direction, and their wavelengths become longer. The resulting fluctuation-induced particle flux is also reduced. Power deposition on the limiters is lower as a result of reduced edge plasma density and temperature. Negative biasing yields somewhat less improvement in the particle confinement while having almost no apparent effect on W(sub p) or on the core and the edge plasma density and temperature profiles. Simultaneous measurements of the plasma potential profile indicate almost no significant change. Biasing has almost no effect on the intrinsic impurity levels in the plasma.

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

NASA Astrophysics Data System (ADS)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

Silicon solar cells as a high-solar-intensity radiometer

NASA Technical Reports Server (NTRS)

Spisz, E. W.; Robson, R. R.

1971-01-01

The characteristics of a conventional, 1- by 2-cm, N/P, gridded silicon solar cell when used as a radiometer have been determined for solar intensity levels to 2800 mW/sq cm (20 solar constants). The short-circuit current was proportional to the radiant intensity for levels only to 700 mW/sq cm (5 solar constants). For intensity levels greater than 700 mW/sq cm, it was necessary to operate the cell in a photoconductive mode in order to obtain a linear relation between the measured current and the radiant intensity. When the solar cell was biased with a reverse voltage of -1 V, the measured current and radiant intensity were linearly related over the complete intensity range from 100 to 2800 mW/sq cm.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Currentless reversal of Néel vector in antiferromagnets

NASA Astrophysics Data System (ADS)

Semenov, Yuriy G.; Li, Xi-Lai; Kim, Ki Wook

2017-01-01

The possibility of magnetization reversal via a bias-mediated perpendicular magnetic anisotropy is examined theoretically in an antiferromagnet. The numerical analyses based on a Néel vector formulation as well as the micromagnetic Landau-Lifshitz-Gilbert simulation reveal that the desired switching can be achieved through dynamical responses that are significantly different from their ferromagnetic counterparts. Instead of the usual precessional trajectories around the applied effective magnetic field, their motions are rather pendulum-like due to the layered magnetic sublattices with a strong antiparallel exchange interaction, where the inertial behavior plays a crucial role. The absence of spiral damping can also lead to faster relaxation by orders of magnitude. With no reliance on the current driven processes, the investigated mechanism is predicted with a low energy requirement of only a few aJ per switching operation in the antiferromagnets.

Influence of time dependent longitudinal magnetic fields on the cooling process, exchange bias and magnetization reversal mechanism in FM core/AFM shell nanoparticles: a Monte Carlo study.

PubMed

Yüksel, Yusuf; Akıncı, Ümit

2016-12-07

Using Monte Carlo simulations, we have investigated the dynamic phase transition properties of magnetic nanoparticles with ferromagnetic core coated by an antiferromagnetic shell structure. Effects of field amplitude and frequency on the thermal dependence of magnetizations, magnetization reversal mechanisms during hysteresis cycles, as well as on the exchange bias and coercive fields have been examined, and the feasibility of applying dynamic magnetic fields on the particle have been discussed for technological and biomedical purposes.

Spin filter effect of hBN/Co detector electrodes in a 3D topological insulator spin valve

NASA Astrophysics Data System (ADS)

Vaklinova, Kristina; Polyudov, Katharina; Burghard, Marko; Kern, Klaus

2018-03-01

Topological insulators emerge as promising components of spintronic devices, in particular for applications where all-electrical spin control is essential. While the capability of these materials to generate spin-polarized currents is well established, only very little is known about the spin injection/extraction into/out of them. Here, we explore the switching behavior of lateral spin valves comprising the 3D topological insulator Bi2Te2Se as channel, which is separated from ferromagnetic Cobalt detector contacts by an ultrathin hexagonal boron nitride (hBN) tunnel barrier. The corresponding contact resistance displays a notable variation, which is correlated with a change of the switching characteristics of the spin valve. For contact resistances below ~5 kΩ, the hysteresis in the switching curve reverses upon reversing the applied current, as expected for spin-polarized currents carried by the helical surface states. By contrast, for higher contact resistances an opposite polarity of the hysteresis loop is observed, which is independent of the current direction, a behavior signifying negative spin detection efficiency of the multilayer hBN/Co contacts combined with bias-induced spin signal inversion. Our findings suggest the possibility to tune the spin exchange across the interface between a ferromagnetic metal and a topological insulator through the number of intervening hBN layers.

SEMICONDUCTOR TECHNOLOGY: Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors

NASA Astrophysics Data System (ADS)

Hui, Qiao; Weida, Hu; Zhenhua, Ye; Xiangyang, Li; Haimei, Gong

2010-03-01

The influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors.

Hard-hard coupling assisted anomalous magnetoresistance effect in amine-ended single-molecule magnetic junction

NASA Astrophysics Data System (ADS)

Tang, Y.-H.; Lin, C.-J.; Chiang, K.-R.

2017-06-01

We proposed a single-molecule magnetic junction (SMMJ), composed of a dissociated amine-ended benzene sandwiched between two Co tip-like nanowires. To better simulate the break junction technique for real SMMJs, the first-principles calculation associated with the hard-hard coupling between a amine-linker and Co tip-atom is carried out for SMMJs with mechanical strain and under an external bias. We predict an anomalous magnetoresistance (MR) effect, including strain-induced sign reversal and bias-induced enhancement of the MR value, which is in sharp contrast to the normal MR effect in conventional magnetic tunnel junctions. The underlying mechanism is the interplay between four spin-polarized currents in parallel and anti-parallel magnetic configurations, originated from the pronounced spin-up transmission feature in the parallel case and spiky transmission peaks in other three spin-polarized channels. These intriguing findings may open a new arena in which magnetotransport and hard-hard coupling are closely coupled in SMMJs and can be dually controlled either via mechanical strain or by an external bias.

Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

NASA Astrophysics Data System (ADS)

Lioliou, G.; Meng, X.; Ng, J. S.; Barnett, A. M.

2016-03-01

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7 μm and diameter of 200 μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22 kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be <1014 cm-3. Photocurrent measurements were performed under visible and near infrared light illumination for both diodes. The analysis of these measurements suggests the presence of a non-active (dead) layer (0.16 μm thickness) at the p+ side top contact interface, where the photogenerated carriers do not contribute to the photocurrent, possibly due to recombination. One of the diodes, D1, was also characterized as detector for room temperature photon counting X-ray spectroscopy; the best energy resolution achieved (FWHM) at 5.9 keV was 745 eV. The noise analysis of the system, based on spectra obtained at different shaping times and applied reverse biases, showed that the dominant source of noise is the dielectric noise. It was also calculated that there was at least (165±24) eV charge trapping noise at 0 V.

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

NASA Astrophysics Data System (ADS)

Ma, Jun; Matioli, Elison

2018-01-01

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted tri-gate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (VSCH), despite a large applied reverse bias, fixing the reverse leakage current (IR) of the SBD. Such architecture led to an ultra-low IR of 51 ± 5.9 nA/mm at -1000 V, in addition to a small turn-on voltage (VON) of 0.61 ± 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (VBR) of -2000 V at 1 μA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the IR and increases the VBR without sacrificing the VON, which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

Understanding of self-terminating pulse generation using silicon controlled rectifier and RC load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Chris, E-mail: chrischang81@gmail.com; Karunasiri, Gamani, E-mail: karunasiri@nps.edu; Alves, Fabio, E-mail: falves@alionscience.com

2016-01-15

Recently a silicon controlled rectifier (SCR)-based circuit that generates self-terminating voltage pulses was employed for the detection of light and ionizing radiation in pulse mode. The circuit consisted of a SCR connected in series with a RC load and DC bias. In this paper, we report the investigation of the physics underlying the pulsing mechanism of the SCR-based. It was found that during the switching of SCR, the voltage across the capacitor increased beyond that of the DC bias, thus generating a reverse current in the circuit, which helped to turn the SCR off. The pulsing was found to bemore » sustainable only for a specific range of RC values depending on the SCR’s intrinsic turn-on/off times. The findings of this work will help to design optimum SCR based circuits for pulse mode detection of light and ionizing radiation without external amplification circuitry.« less

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

PubMed Central

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-01-01

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042

Cu-Induced Dielectric Breakdown of Porous Low-Dielectric-Constant Film

NASA Astrophysics Data System (ADS)

Cheng, Yi-Lung; Lee, Chih-Yen; Huang, Yao-Liang; Sun, Chung-Ren; Lee, Wen-Hsi; Chen, Giin-Shan; Fang, Jau-Shiung; Phan, Bach Thang

2017-06-01

Dielectric breakdown induced by Cu ion migration in porous low- k dielectric films has been investigated in alternating-polarity bias conditions using a metal-insulator-metal capacitor with Cu top metal electrode. The experimental results indicated that Cu ions migrated into the dielectric film under stress with positive polarity, leading to weaker dielectric strength and shorter time to failure (TTF). In the alternating-polarity test, the measured TTFs increased with decreasing stressing frequency, implying backward migration of Cu ions during reverse-bias stress. Additionally, compared with a direct-current stress condition, the measured TTFs were higher as the frequency was decreased to 10-2 Hz. The electric-field acceleration factor for porous low- k dielectric film breakdown in the alternating-polarity test was also found to increase. This Cu backward migration effect is effective when the stressing time under negative polarity is longer than 0.1 s.

Fabrication of resistive switching memory structure using double-sided-anodized porous alumina

NASA Astrophysics Data System (ADS)

Morishita, Yoshitaka; Hosono, Takaya; Ogawa, Hiroto

2017-05-01

Double-sides of aluminum sheet were anodized; at first, one side (front-side) of aluminum sheet was anodized, and the pores were filled with nickel using electroplating technique. Next, the other side (back side) of aluminum sheet was anodized. After formation of electrodes on both sides of anodic porous alumina, the current-voltage characteristics were examined, and reversible change in the resistance between metallic and insulating states was measured during mono-polar operation. This switching behavior could be measured for the sample with the depth of backside pores of about 100 μm. The bias voltage, at which the resistance state changed into the lower-resistance state from the higher-resistance state, decreased with decreasing the depth of backside pores, and the bias voltage was about 1 V in the case of the backside pores of about 10 μm.

Radiation damage effects by electrons, protons, and neutrons in Si/Li/ detectors.

NASA Technical Reports Server (NTRS)

Liu, Y. M.; Coleman, J. A.

1972-01-01

The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

PubMed

Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong

2014-09-10

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.

Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

PubMed Central

Tang, Y. -H.; Chu, F. -C.; Kioussis, Nicholas

2015-01-01

We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds. PMID:26095146

Optoelectronic Aspects of Avionic Systems II

DTIC Science & Technology

1975-05-01

and a O.lpF bypass capacitor on the orange high- voltage lead which projects from the side of the connector . The black and white lead is ground. The...shows the 907nm response vs bias characteristic for the PIN-040A. Notice that the "turn-off" transient is the same for all bias voltages . Increasing...162V 187 40 80 120 160 Reverse Bias Voltage - (Volts) 200 Figure 48. TISL59 Avalanche Gain Vs Bias 154 IT iii irf

Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature

NASA Astrophysics Data System (ADS)

Lapa, Havva Elif; Kökce, Ali; Al-Dharob, Mohammed; Orak, İkram; Özdemir, Ahmet Faruk; Altındal, Semsettin

2017-10-01

Au/(Zn-doped PVA)/n-4H-SiC metal/polymer/semiconductor (MPS) structures with different interfacial layer thickness values (50, 150, 500 nm) were fabricated and their electrical characteristics were compared. Their electrical parameters (i.e. reverse-bias saturation current (Io), ideality factor (n), zero-bias barrier height (BH) (Φbo), series and shunt resistances (Rs, Rsh)) were calculated from the forward bias current-voltage (IF-VF) data whereas other parameters (i.e. Fermi energy level (EF), BH (Vb) and donor concentration (Nd)) were calculated from the linear part of C-2-V characteristics at room temperature. Obtained results confirmed that the values of n, Φbo, Rs and Rsh increase with increasing interlayer thickness, and linear correlation between n and Φbo was observed. The high values of n for three structures can be ascribed to the presence of an interlayer, surface states (Nss) and barrier inhomogeneities. The energy density distribution profile of Nss was obtained from the IF-VF data by taking into account voltage-dependent effective BH (Ve) and n for each structure. The Ri vs V plot for these structures was obtained using both Ohm's law and Nicollian-Brews method. All these experimental results show that the interfacial layer and its thickness play an important role in main electric parameters of these structures.

Violet-blue LEDs based on p-GaN/n-ZnO nanorods and their stability.

PubMed

Jha, Shrawan; Qian, Jin-Cheng; Kutsay, Oleksandr; Kovac, Jaroslav; Luan, Chun-Yan; Zapien, Juan Antonio; Zhang, Wenjun; Lee, Shuit-Tong; Bello, Igor

2011-06-17

In this paper, we report a fabrication, characterization and stability study of p-GaN/n-ZnO nanorod heterojunction light-emitting devices (LEDs). The LEDs were assembled from arrays of n-ZnO vertical nanorods epitaxially grown on p-GaN. LEDs showed bright electroluminescence in blue (440 nm), although weaker violet (372 nm) and green-yellow (550 nm) spectral components were also observed. The device characteristics are generally stable and reproducible. The LEDs have a low turn-on voltage (∼5 V). The electroluminescence (EL) is intense enough to be noticed by the naked eye, at an injection current as low as ∼ 40 µA (2.1 × 10(-2) A cm(-2) at 7 V bias). Analysis of the materials, electrical and EL investigations point to the role of a high quality of p-n nano-heterojunction which facilitates a large rectification ratio (320) and a stable reverse current of 2.8 µA (1.4 × 10(-3) A cm(-2) at 5 V). Stability of EL characteristics was investigated in detail. EL intensity showed systematic degradation over a short duration when the LED was bias-stressed at 30 V. At smaller bias (<20 V) LEDs tend to show a stable and repeatable EL characteristic. Thus a simple low temperature solution growth method was successfully exploited to realize nanorod/film heterojunction LED devices with predictable characteristics.

Quantum interference effect in electron tunneling through a quantum-dot-ring spin valve

PubMed Central

2011-01-01

Spin-dependent transport through a quantum-dot (QD) ring coupled to ferromagnetic leads with noncollinear magnetizations is studied theoretically. Tunneling current, current spin polarization and tunnel magnetoresistance (TMR) as functions of the bias voltage and the direct coupling strength between the two leads are analyzed by the nonequilibrium Green's function technique. It is shown that the magnitudes of these quantities are sensitive to the relative angle between the leads' magnetic moments and the quantum interference effect originated from the inter-lead coupling. We pay particular attention on the Coulomb blockade regime and find the relative current magnitudes of different magnetization angles can be reversed by tuning the inter-lead coupling strength, resulting in sign change of the TMR. For large enough inter-lead coupling strength, the current spin polarizations for parallel and antiparallel magnetic configurations will approach to unit and zero, respectively. PACS numbers: PMID:21711779

Effects of the shape anisotropy and biasing field on the magnetization reversal process of the diamond-shaped NiFe nano films

NASA Astrophysics Data System (ADS)

Xu, Sichen; Yin, Jianfeng; Tang, Rujun; Zhang, Wenxu; Peng, Bin; Zhang, Wanli

2017-11-01

The effects of the planar shape anisotropy and biasing field on the magnetization reversal process (MRP) of the diamond-shaped NiFe nano films have been investigated by micromagnetic simulations. Results show that when the length to width ratio (LWR) of the diamond-shaped film is small, the MRP of the diamond-shaped films are sensitive to LWR. But when LWR is larger than 2, a stable domain switching mode is observed which nucleates from the center of the diamond and then expands to the edges. At a fixed LWR, the magnitude of the switching fields decrease with the increase of the biasing field, but the domain switching mode is not affected by the biasing field. Further analysis shows that demagnetization energy dominates over the MRP of the diamond-shaped films. The above LWR dependence of MRP can be well explained by a variation of the shape anisotropic factor with LWR.

Reversal of the asymmetry in a cylindrical coaxial capacitively coupled Ar/Cl 2 plasma

DOE PAGES

Upadhyay, Janardan; Im, Do; Popović, Svetozar; ...

2015-10-08

The reduction of the asymmetry in the plasma sheath voltages of a cylindrical coaxial capacitively coupled plasma is crucial for efficient surface modification of the inner surfaces of concave three-dimensional structures, including superconducting radio frequency cavities. One critical asymmetry effect is the negative dc self-bias, formed across the inner electrode plasma sheath due to its lower surface area compared to the outer electrode. The effect on the self-bias potential with the surface enhancement by geometric modification on the inner electrode structure is studied. The shapes of the inner electrodes are chosen as cylindrical tube, large and small pitch bellows, andmore » disc-loaded corrugated structure (DLCS). The dc self-bias measurements for all these shapes were taken at different process parameters in Ar/Cl 2 discharge. Lastly, the reversal of the negative dc self-bias potential to become positive for a DLCS inner electrode was observed and the best etch rate is achieved due to the reduction in plasma asymmetry.« less

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Larkin, David J.; Starr, Jonathan E.; Powell, J. A.; Salupo, Carl S.; Matus, Lawrence G.

1993-01-01

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers

NASA Astrophysics Data System (ADS)

Du, W.; Takabe, R.; Baba, M.; Takeuchi, H.; Hara, K. O.; Toko, K.; Usami, N.; Suemasu, T.

2015-03-01

Heterojunction solar cells that consist of 15 nm thick molybdenum trioxide (MoOx, x < 3) as a hole transport layer and 600 nm thick unpassivated or passivated n-BaSi2 layers were demonstrated. Rectifying current-voltage characteristics were observed when the surface of BaSi2 was exposed to air. When the exposure time was decreased to 1 min, an open circuit voltage of 200 mV and a short circuit current density of 0.5 mA/cm2 were obtained under AM1.5 illumination. The photocurrent density under a reverse bias voltage of -1 V reached 25 mA/cm2, which demonstrates the significant potential of BaSi2 for solar cell applications.

Electrical properties of thermoelectric cobalt Ca3Co4O9 epitaxial heterostructures

NASA Astrophysics Data System (ADS)

Guo, Haizhong; Wang, Shufang; Wang, Le; Jin, Kui-juan; Chen, Shanshan; Fu, Guangsheng; Ge, Chen; Lu, Huibin; Wang, Can; He, Meng; Yang, Guozhen

2013-03-01

Heterostructures fabricated from layered cobalt oxides offer substantial advantages for thermoelectric applications. C-axis-oriented Ca3Co4O9 (CCO) thin films on SrTiO3 substrates and Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunctions were fabricated by pulsed laser deposition. The measurements of in-plane resistivity, thermopower, and magnetic properties performed on the Ca3Co4O9 thin films were found to be comparable to ab-plane those of the single crystals due to good orientation of the films. The temperature dependence of the electrical transport properties of Ca3Co4O9/SrTi0.993Nb0.007O3 p-n heterojunction was also investigated. The junction shows two distinctive transport mechanisms at different temperature regimes under forward bias: tunneling across the Schottky barrier in the temperature range of 100-380 K, and tunneling mechanism at low bias and thermal emission mechanism at high bias between 10 and 100 K. However, for the case of low reverse bias, the trap assisted tunneling process should be considered for the leakage current. Negative magnetoresistance effect is observed at low temperatures, related to the electron spin-dependent scattering and the interface resistance of the heterostructures.

Analysis of Dynamic Avalanche Phenomenon in SOI Lateral High-speed Diode during Reverse Recovery and Development of a Novel Device Structure for Suppressing Dynamic Avalanche

NASA Astrophysics Data System (ADS)

Tokura, Norihito; Yamamoto, Takao; Kato, Hisato; Nakagawa, Akio

We have studied the dynamic avalanche phenomenon in an SOI lateral diode during reverse recovery by using a mixed-mode device simulation. In the study, it has been found that local impact ionization occurs near an anode-side field oxide edge, where a high-density hole current flows and a high electric field appears simultaneously. We propose that a p-type anode extension region (AER) along a trench side wall effectively sweeps out stored carriers beneath an anode p-diffusion layer during reverse recovery, resulting in reduction of the electric field and remarkable suppression of the dynamic avalanche. The AER reduces the total recovery charge and does not cause any increase in the total stored charge under a forward bias operation. This effect is verified experimentally by the fabricated device with AER. Thus, the developed SOI lateral diode is promising as a high-speed and highly rugged free-wheeling diode, which can be integrated into next-generation SOI microinverters.

Method of monitoring CO concentrations in hydrogen feed to a PEM fuel cell

DOEpatents

Grot, Stephen Andreas; Meltser, Mark Alexander; Gutowski, Stanley; Neutzler, Jay Kevin; Borup, Rodney Lynn; Weisbrod, Kirk

2000-01-01

The CO concentration in the H.sub.2 feed stream to a PEM fuel cell stack is monitored by measuring current and/or voltage behavior patterns from a PEM-probe communicating with the reformate feed stream. Pattern recognition software may be used to compare the current and voltage patterns from the PEM-probe to current and voltage telltale outputs determined from a reference cell similar to the PEM-probe and operated under controlled conditions over a wide range of CO concentrations in the H.sub.2 fuel stream. The PEM-probe is intermittently purged of any CO build-up on the anode catalyst (e.g., by (1) flushing the anode with air, (2) short circuiting the PEM-probe, or (3) reverse biasing the PEM-probe) to keep the PEM-probe at peak performance levels.

Axial p-n junction and space charge limited current in single GaN nanowire.

PubMed

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-05

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Axial p-n junction and space charge limited current in single GaN nanowire

NASA Astrophysics Data System (ADS)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-01

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Damage and recovery characteristics of lithium-containing solar cells.

NASA Technical Reports Server (NTRS)

Faith, T. J.

1971-01-01

Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length damage coefficient after recovery were derived using results of short-circuit current, diffusion-length, and reverse-bias capacitance measurements. The damage coefficients were expressed in terms of a single lithium density parameter, the lithium gradient. A fluence dependence was also established, this dependence being the same for both the immediate-post-irradiation and post-recovery cases. Cell recovery rates were found to increase linearly with lithium gradient.

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; Dejewski, S. M.; George, T.; Jones, E. W.; Krabach, T. N.; Ksendzov, A.

1993-01-01

Tailorable infrared photoresponse in the 1-2 micron range are demonstrated in a device incorporating electrically floating metal silicide particles. Photons absorbed by excitation of the metallic-particle surface plasmon are shown to contribute to the photoresponse. Quantum efficiencies of roughly 0.2 percent are measured at 77 K, with dark currents of less than 2 nA/sq cm at a reverse bias of 1 V and detectivities of 4 x 10 exp 9 - 8 x 10 exp 9 cm sq rt Hz/W are obtained.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Reversal magnetization, spin reorientation, and exchange bias in YCr O3 doped with praseodymium

NASA Astrophysics Data System (ADS)

Durán, A.; Escamilla, R.; Escudero, R.; Morales, F.; Verdín, E.

2018-01-01

Crystal structure, thermal properties, and magnetic properties were studied systematically in Y1 -xP rxCr O3 with 0.0 ≤x ≤0.3 compositions. Magnetic susceptibility and specific-heat measurements show an increase in the antiferromagnetic transition temperature (TN) as Pr is substituted in the Y sites and notable magnetic features are observed below TN. Strong coupling between magnetic and crystalline parameters is observed in a small range of Pr compositions. A small perturbation in the lattice parameters by a Pr ion is sufficient to induce a spin-reorientation transition followed by magnetization reversal to finally induce the exchange-bias effect. The spin-reorientation temperature (TSR) is increased from 35 to 149 K for 0.025 ≤x ≤0.1 compositions. It is found that the Cr spin sublattice rotates continuously from TSR to a new spin configuration at lower temperature. In addition, magnetization reversal is observed at T*˜35 K for x =0.05 up to T*˜63 K for x =0.20 composition. The M -H curves show a negative exchange-bias effect induced by Pr ions, which are observed below 100 K and are more intense at 5 K. At 10 K, the magnetic contribution of the specific heat as well as the ZFC magnetization show the rise of a peak with increasing Pr content. The magnetic anomaly could be associated with the freezing of the Pr magnetic moment randomly distributed at the 4 c crystallographic site. A clear correspondence between spin reorientation, magnetization reversal, and exchange-bias anisotropy with the tilting and octahedral distortion is also discussed.

Sperm competition generates evolution of increased paternal investment in a sex role-reversed seed beetle.

PubMed

Booksmythe, I; Fritzsche, K; Arnqvist, G

2014-12-01

When males provide females with resources at mating, they can become the limiting sex in reproduction, in extreme cases leading to the reversal of typical courtship roles. The evolution of male provisioning is thought to be driven by male reproductive competition and selection for female fecundity enhancement. We used experimental evolution under male- or female-biased sex ratios and limited or unlimited food regimes to investigate the relative roles of these routes to male provisioning in a sex role-reversed beetle, Megabruchidius tonkineus, where males provide females with nutritious ejaculates. Males evolving under male-biased sex ratios transferred larger ejaculates than did males from female-biased populations, demonstrating a sizeable role for reproductive competition in the evolution of male provisioning. Although larger ejaculates elevated female lifetime offspring production, we found little evidence of selection for larger ejaculates via fecundity enhancement: males evolving under resource-limited and unlimited conditions did not differ in mean ejaculate size. Resource limitation did, however, affect the evolution of conditional ejaculate allocation. Our results suggest that the resource provisioning that underpins sex role reversal in this system is the result of male-male reproductive competition rather than of direct selection for males to enhance female fecundity. © 2014 European Society For Evolutionary Biology. Journal of Evolutionary Biology © 2014 European Society For Evolutionary Biology.

Dual Band Deep Ultraviolet AlGaN Photodetectors

NASA Technical Reports Server (NTRS)

Aslam, S.; Miko, L.; Stahle, C.; Franz, D.; Pugel, D.; Guan, B.; Zhang, J. P.; Gaska, R.

2007-01-01

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

PubMed

Das, Achintya; Duttagupta, Siddhartha P

2015-12-01

There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Spin valve-like magnetic tunnel diode exhibiting giant positive junction magnetoresistance at low temperature in Co2MnSi/SiO2/p-Si heterostructure

NASA Astrophysics Data System (ADS)

Maji, Nilay; Kar, Uddipta; Nath, T. K.

2018-02-01

The rectifying magnetic tunnel diode has been fabricated by growing Co2MnSi (CMS) Heusler alloy film carefully on a properly cleaned p-Si (100) substrate with the help of electron beam physical vapor deposition technique and its structural, electrical and magnetic properties have been experimentally investigated in details. The electronic- and magneto-transport properties at various isothermal conditions have been studied in the temperature regime of 78-300 K. The current-voltage ( I- V) characteristics of the junction show an excellent rectifying magnetic tunnel diode-like behavior throughout that temperature regime. The current ( I) across the junction has been found to decrease with the application of a magnetic field parallel to the plane of the CMS film clearly indicating positive junction magnetoresistance (JMR) of the heterostructure. When forward dc bias is applied to the heterostructure, the I- V characteristics are highly influenced on turning on the field B = 0.5 T at 78 K, and the forward current reduces abruptly (99.2% current reduction at 3 V) which is nearly equal to the order of the magnitude of the current observed in the reverse bias. Hence, our Co2MnSi/SiO2/p-Si heterostructure can perform in off ( I off)/on ( I on) states with the application of non-zero/zero magnetic field like a spin valve at low temperature (78 K).

Translation failure and medical reversal: Two sides to the same coin.

PubMed

Prasad, Vinay

2016-01-01

Translation failure occurs when the results of preclinical, observational and/or early phase studies fail to predict the results of well done (i.e. appropriately controlled, adequately powered, and properly conducted) phase III or randomised clinical trials. Some failures occur when promising basic science findings fail to replicate in human studies, while others happen when promising uncontrolled trial data show an exaggerated effect that vanishes in the setting of a randomised trial. Medical reversals occur when the results of preclinical, observational and/or early phase studies fail to predict the results of subsequent randomized clinical trials, but the practice has already gained widespread acceptance. Oncologic examples include bevacizumab and the use of autologous stem cell transplant in metastatic breast cancer. In a well-intentioned effort to reduce the rate of translation failure, oncologists must be careful that changes to regulatory processes and clinical trial design do not actually work to increase the approval of ineffective compounds. By trying to cure translation failure, we should be careful to avoid medical reversal. The rise of surrogate end-points and role of hard-wired bias in oncology trials suggest that we may be currently ignoring the simple fact that translation failure and medical reversal are two sides to the same coin. Published by Elsevier Ltd.

Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Y.; Ali, G.N.; Mikhov, M.K.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Correlation Between Morphological Defects, Electron Beam Induced Current Imaging, and the Electrical Properties of 4H-SiC Schottky Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang,Y.; Ali, G.; Mikhov, M.

2005-01-01

Defects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4H-SiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical Nomarski microscopy and atomic force microscopy were used to observe the morphological defects, which are classified into 26 types based on appearance alone. Forward and reverse current-voltage characteristics were used to extract barrier heights, ideality factors, and breakdown voltages. Barrier heights decrease about linearly with increasing ideality factor, which is explained by discrete patches of low barrier heightmore » within the main contact. Barrier height, ideality, and breakdown voltage all degrade with increasing device diameter, suggesting that discrete defects are responsible. Electroluminescence was observed under reverse bias from microplasmas associated with defects containing micropipes. EBIC measurements reveal several types of features corresponding to recombination centers. The density of dark spots observed by EBIC correlates strongly with ideality factor and barrier height. Most morphological defects do not affect the reverse characteristics when no micropipes are present, but lower the barrier height and worsen the ideality factor. However, certain multiple-tailed defects, irregularly shaped defects and triangular defects with 3C inclusions substantially degrade both breakdown voltage and barrier height, and account for most of the bad devices that do not contain micropipes. Micropipes in these wafers are also frequently found to be of Type II, which do not run parallel to the c axis.« less

Organic-inorganic hybrid inverted photodiode with planar heterojunction for achieving low dark current and high detectivity

NASA Astrophysics Data System (ADS)

Ha, JaeUn; Yoon, Seongwon; Lee, Jong-Soo; Chung, Dae Sung

2016-03-01

In this study, the strategy of using an organic-inorganic hybrid planar heterojunction consisting of polymeric semiconductors and inorganic nanocrystals is introduced to realize a high-performance hybrid photodiode (HPD) with low dark current and high detectivity. To prevent undesired charge injection under the reverse bias condition, which is the major dark current source of the photodiode, a well-defined planar heterojunction is strategically constructed via smart solution process techniques. The optimized HPD renders a low dark current of ˜10-5 mA cm-2 at -5 V and ˜10-6 mA cm-2 at -1 V, as well as a high detectivity ˜1012 Jones across the entire visible wavelength range. Furthermore, excellent photocurrent stability is demonstrated under continuous light exposure. We believe that the solution-processed planar heterojunction with inverted structure can be an attractive alternative diode structure for fabricating high-performance HPDs, which usually suffer from high dark current issues.

Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination

NASA Astrophysics Data System (ADS)

Chang, P. K.; Hwu, J. G.

2017-04-01

The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

2014-01-01

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

Modeling the instability behavior of thin film devices: Fermi Level Pinning

NASA Astrophysics Data System (ADS)

Moeini, Iman; Ahmadpour, Mohammad; Gorji, Nima E.

2018-05-01

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at multiple levels occurs due to high concentration of electron-traps or acceptor-like defects at the interface of a Schottky or pn junction and this re-arranges the recombination rate and charage collection. Shift of these levels under stress conditions determines the change in current-voltage characteristics of the cell. This theory was suggested for several device such as metal/n-CdTe, CdS/CdTe, CIGS/CdS or even GaAs solar cells without a modeling approach to clearly explain it's physics. We have applied the strong SNS modeling approach to shed light on Fermi Level Pinning theory. The modeling confirms that change in position of Fermi Level and it's pining in a lower level close to Valence band increases the recombination and reduces the open-circuit voltage. In contrast, Fermi Level pinning close to conduction band strengthens the electric field at the junction which amplifies the carrier collection and boosts the open-circuit voltage. This theory can well explain the stress effect on device characteristics of various solar cells or Schottky junctions by simply finding the right Fermi level pinning position at every specific stress condition.

Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

2016-11-21

We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findingsmore » in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Highly sensitive PMOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane

NASA Astrophysics Data System (ADS)

Chen, Yung Ting; Chen, Yang Fang

2010-03-01

A new approach for developing highly sensitive PMOS photodetector based on the assistance of AAO membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the PMOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Notably, the response at the optical communication wavelength of 850 nm can reach up to 0.24 A/W with an external quantum efficiency of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5 V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications

NASA Astrophysics Data System (ADS)

Moffat, N.; Bates, R.; Bullough, M.; Flores, L.; Maneuski, D.; Simon, L.; Tartoni, N.; Doherty, F.; Ashby, J.

2018-03-01

A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles which demonstrate the desired operational characteristics of high breakdown voltage (500 V) and a gain of 10 at 200 V reverse bias for X-ray detection. The first low gain avalanche detectors fabricated by Micron Semiconductor Ltd are presented. The doping profiles of the multiplication junctions were measured with SIMS and reproduced by simulating the full fabrication process which enabled further development of the manufacturing process. The detectors are 300 μm thick p-type silicon with a resistivity of 8.5 kΩcm, which fully depletes at 116 V. The current characteristics are presented and demonstrate breakdown voltages in excess of 500 V and a current density of 40 to 100 nAcm‑2 before breakdown measured at 20oC. The gain of the LGAD has been measured with a red laser (660 nm) and shown to be between 9 and 12 for an external bias voltage range from 150 V to 300 V.

Effect of the substitution of F on the photoswitching behavior in single molecular device

NASA Astrophysics Data System (ADS)

Bian, Baoan; Zheng, Yapeng; Yuan, Peipei; Liao, Bin; Chen, Wei; An, Xiuhua; Mo, Xiaotong; Ding, Yuqiang

2017-09-01

We carry out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a 5-arylidenehydantoin molecule sandwiched between two Au electrodes. A reversible switching behavior between E and Z isomerization can be observed in the device through light irradiation, and their currents display different characteristic. Furthermore, it is found that the substitution of F in the molecule enlarges the switching ratio of device. The different characteristics of currents for E/Z forms and E/Z with the substitution of F are discussed by the transmission spectra and the molecular projected self-consistent Hamiltonian states. We discuss the change of Fermi level alignment due to the substitution of F, and the polarization effect under bias. We find the negative differential resistance effect in the E form with the substitution of F, which is explained by change of molecule-electrode coupling with the varied bias. The results suggest that the 5-arylidenehydantoin molecule with the substitution of F that improves the performance of device, becoming one of the methods for improving single molecular photoswitching performance in the future.

Time-dependent i-DFT exchange-correlation potentials with memory: applications to the out-of-equilibrium Anderson model

NASA Astrophysics Data System (ADS)

Kurth, Stefan; Stefanucci, Gianluca

2018-06-01

We have recently put forward a steady-state density functional theory (i-DFT) to calculate the transport coefficients of quantum junctions. Within i-DFT it is possible to obtain the steady density on and the steady current through an interacting junction using a fictitious noninteracting junction subject to an effective gate and bias potential. In this work we extend i-DFT to the time domain for the single-impurity Anderson model. By a reverse engineering procedure we extract the exchange-correlation (xc) potential and xc bias at temperatures above the Kondo temperature T K. The derivation is based on a generalization of a recent paper by Dittmann et al. [N. Dittmann et al., Phys. Rev. Lett. 120, 157701 (2018)]. Interestingly the time-dependent (TD) i-DFT potentials depend on the system's history only through the first time-derivative of the density. We perform numerical simulations of the early transient current and investigate the role of the history dependence. We also empirically extend the history-dependent TD i-DFT potentials to temperatures below T K. For this purpose we use a recently proposed parametrization of the i-DFT potentials which yields highly accurate results in the steady state.

High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw; Center for Micro/Nano Science and Technology, National Cheng Kung University, One University Road, Tainan 701, Taiwan; Lin, Hsueh-Pin

This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{supmore » 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.« less

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Meng; Zhao, Yuning; Yan, Xiaodong

2015-12-07

Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

Analysis of different tunneling mechanisms of In{sub x}Ga{sub 1−x}As/AlGaAs tunnel junction light-emitting transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Cheng-Han; Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw; Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In{sub x}Ga{sub 1−x}As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.

Optical rectification using geometrical field enhancement in gold nano-arrays

NASA Astrophysics Data System (ADS)

Piltan, S.; Sievenpiper, D.

2017-11-01

Conversion of photons to electrical energy has a wide variety of applications including imaging, solar energy harvesting, and IR detection. A rectenna device consists of an antenna in addition to a rectifying element to absorb the incident radiation within a certain frequency range. We designed, fabricated, and measured an optical rectifier taking advantage of asymmetrical field enhancement for forward and reverse currents due to geometrical constraints. The gold nano-structures as well as the geometrical parameters offer enhanced light-matter interaction at 382 THz. Using the Taylor expansion of the time-dependent current as a function of the external bias and oscillating optical excitation, we obtained responsivities close to quantum limit of operation. This geometrical approach can offer an efficient, broadband, and scalable solution for energy conversion and detection in the future.

Characteristics of III-V Semiconductor Devices at High Temperature

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

1994-01-01

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

NASA Astrophysics Data System (ADS)

Ho, Hsiang-Hsi; Lin, Chun-Lung; Tsai, Wei-Che; Hong, Liang-Zheng; Lyu, Cheng-Han; Hsu, Hsun-Feng

2018-01-01

We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.

Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe

NASA Astrophysics Data System (ADS)

Solovan, M. M.; Brus, V. V.; Maryanchuk, P. D.; Ilashchuk, M. I.; Rappich, J.; Nickel, N.; Abashin, S. L.

2014-01-01

Photosensitive heterojunctions n-TiN/p-CdTe were fabricated for the first time by means of titanium nitride thin film deposition (n-type conductivity) by the reactive magnetron sputtering onto freshly etched single crystal substrates CdTe (1 1 0) of p-type conductivity. The temperature dependences of the height of the potential barrier and series resistance of the n-TiN/p-CdTe heterojunction were investigated. The dominating current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.35 V, short-circuit current Isc = 1.88 mA см-2 and fill factor FF = 0.51 under illumination 80 mW сm-2.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Local bipolar-transistor gain measurement for VLSI devices

NASA Astrophysics Data System (ADS)

Bonnaud, O.; Chante, J. P.

1981-08-01

A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the device in as small a region as possible. To reduce the size of the conducting area, a transversal reverse base current is forced through the base layer resistance in order to pinch in the emitter current in the illuminated region. Transistor gain is deduced from small signal measurements. A model associated with this technique is developed, and this is in agreement with the first experimental results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kasper, M.; Gramse, G.; Hoffmann, J.

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part ofmore » the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.« less

Suppression of turbulent particle flux during biased rotation in LAPD

NASA Astrophysics Data System (ADS)

Carter, T. A.

2005-10-01

The edge plasma in LAPD is rotated through the application of a bias voltage (typically 100V-200V) between the plasma source cathode and the vacuum vessel wall. Without bias, cross-field turbulent particle transport causes the density profile to extend well past the cathode edge, with a fairly gentle gradient (Ln˜10 cm). As the bias voltage is applied and increased past a threshold value, the measured density profile steepens dramatically (Ln˜2 cm) at a radius near the peak of the flow shear. Turbulent transport flux measurements in this region show that the flux is reduced and then suppressed completely as the threshold is approached. As the bias voltage is increased further, the measured turbulent transport flux reverses direction. The amplitude of the density and azimuthal electric field fluctuations is observed to decrease during biased rotation, the product of the amplitudes decreasing by a factor of 5. However the dominant change appears in the cross-phase, which is altered dramatically, leading to the observed suppression and reversal of the turbulent flux. Detailed two-dimensional turbulent correlation measurements have been performed using the high repetition rate (1 Hz) and high reproducibility of LAPD plasmas. In unbiased plasmas, the correlation is localized to around 5 cm radially and a slightly smaller distance azimuthally (ρs˜0.5-1 cm). During biased rotation, a dramatic increase in the azimuthal correlation is observed, however there is little change in the radial correlation length.

Electrically tunable transport and high-frequency dynamics in antiferromagnetic S r3I r2O7

NASA Astrophysics Data System (ADS)

Seinige, Heidi; Williamson, Morgan; Shen, Shida; Wang, Cheng; Cao, Gang; Zhou, Jianshi; Goodenough, John B.; Tsoi, Maxim

2016-12-01

We report dc and high-frequency transport properties of antiferromagnetic S r3I r2O7 . Temperature-dependent resistivity measurements show that the activation energy of this material can be tuned by an applied dc electrical bias. The latter allows for continuous variations in the sample resistivity of as much as 50% followed by a reversible resistive switching at higher biases. Such a switching is of high interest for antiferromagnetic applications in high-speed memory devices. Interestingly, we found the switching behavior to be strongly affected by a high-frequency (microwave) current applied to the sample. The microwaves at 3-7 GHz suppress the dc switching and produce resonancelike features that we tentatively associated with the dissipationless magnonics recently predicted to occur in antiferromagnetic insulators subject to ac electric fields. We have characterized the effects of microwave irradiation on electronic transport in S r3I r2O7 as a function of microwave frequency and power, strength and direction of external magnetic field, strength and polarity of applied dc bias, and temperature. Our observations support the potential of antiferromagnetic materials for high-speed/high-frequency spintronic applications.

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

2017-12-01

A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

NASA Technical Reports Server (NTRS)

Bolton, Eric K.; Sayler, Gary S.; Nivens, David E.; Rochelle, James M.; Ripp, Steven; Simpson, Michael L.

2002-01-01

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

The role of the substrate in Graphene/Silicon photodiodes

NASA Astrophysics Data System (ADS)

Luongo, G.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A.

2018-01-01

The Graphene/Silicon (Gr/Si) junction can function as a Schottky diode with performances strictly related to the quality of the interface. Here, we focus on the substrate geometry and on its effects on Gr/Si junction physics. We fabricate and study the electrical and optical behaviour of two types of devices: one made of a Gr/Si planar junction, the second realized with graphene on an array of Si nanotips. We show that the Gr/Si flat device exhibits a reverse photocurrent higher than the forward current and achieves a photoresponsivity of 2.5 A/W. The high photoresponse is due to the charges photogenerated in Si below a parasitic graphene/SiO2/Si structure, which are injected into the Gr/Si junction region. The other device with graphene on Si-tips displays a reverse current that grows exponentially with the bias. We explain this behaviour by taking into account the tip geometry of the substrate, which magnifies the electric field and shifts the Fermi level of graphene, thus enabling fine-tuning of the Schottky barrier height. The Gr/Si-tip device achieves a higher photoresponsivity, up to 3 A/W, likely due to photocharge internal multiplication.

Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.

In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power presentmore » in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.« less

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

NASA Astrophysics Data System (ADS)

Kopytko, M.; Kębłowski, A.; Madejczyk, P.; Martyniuk, P.; Piotrowski, J.; Gawron, W.; Grodecki, K.; Jóźwikowski, K.; Rutkowski, J.

2017-10-01

Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength infrared HgCdTe heterostructure photodiodes exhibit subnanosecond time constants while operating under reverse bias. However, nonequilibrium devices exhibit excessive low-frequency 1/ f noise that extends up to MHz range, representing a severe obstacle to their widespread application. Present efforts are focused on zero-bias operation of photodiodes. Unfortunately, the time constant of unbiased photodiodes is still at the level of several nanoseconds. We present herein a theoretical investigation of device design for improved response time and detectivity of long-wavelength infrared HgCdTe photodiodes operating at 230 K in zero-bias mode. The calculation results show that highly doped p-type HgCdTe is the absorber material of choice for fast photodiodes due to its high electron diffusion coefficient. The detectivity of such a device can also be optimized by using absorber doping of N A = 1 × 1017 cm-3. Reduction of the thickness is yet another approach to improve the device response. Time constant below 1 ns is achieved for an unbiased photodiode with absorber thickness below 4 μm. A tradeoff between the contradictory requirements of achieving high detectivity and fast response time is expected in an optically immersed photodiode with very small active area.

Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

NASA Astrophysics Data System (ADS)

Tomer, Dushyant

Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect smooth interface fails to explain such behavior, hence, we apply a modified emission theory with Gaussian distribution of Schottky barrier heights. The modified theory, applicable to inhomogeneous interfaces, explains the temperature dependent behavior of our Schottky junctions and gives a temperature independent mean barrier height. We attribute the inhomogeneous barrier height to the presence of graphene ripples and ridges in case of SiC and MoS2 while surface states and trapped charges at the interface is dominating in Si and GaAs. Additionally, we observe bias dependent current and barrier height in reverse bias regime also for all Schottky junctions. To explain such behavior, we consider two types of reverse bias conduction mechanisms; Poole-Frenkel and Schottky emission. We find that Poole-Frenkel emission explains the characteristics of graphene/SiC junctions very well. However, both the mechanism fails to interpret the behavior of graphene/Si and graphene/GaAs Schottky junctions. These findings provide insight into the fundamental physics at the interface of graphene/semiconductor junctions.

The reversal of the spontaneous exchange bias effect and zero-field-cooling magnetization in La1.5Sr0.5Co1-xFexMnO6: the effect of Fe doping.

PubMed

Zhang, H G; Xie, L; Liu, X C; Xiong, M X; Cao, L L; Li, Y T

2017-09-20

The crystal structure, electronic structure and magnetic properties were systematically studied in a series of Fe-doped La 1.5 Sr 0.5 CoMnO 6 double perovskites. The X-ray diffraction patterns of the samples are all refined with a rhombohedral (R3[combining macron]c) structure. The parameters a and c continuously increase with increasing Fe doping concentration x. X-ray photoelectron spectroscopy (XPS) spectra of the Mn, Co, and Fe 2p core levels, consistent with the soft X-ray absorption spectroscopy (XAS) spectra of Mn, Co, and Fe L 2,3 edges, indicate that their valence states are Mn 3+ and Mn 4+ , Co 2+ and Co 3+ , and Fe 3+ , respectively. However, relative to samples with x ≤ 0.1, there is an abrupt change of photon energy in the Co- and Fe-2p XAS spectra for x ≥ 0.2, implying the spin state transition is from high to low. In addition, this is further confirmed by a comparison between the calculated effective spin moment from the paramagnetic data and the theoretical value. Interestingly, we demonstrate the reversal of both zero-field-cooling magnetization and the sign switching of the spontaneous exchange bias (SEB) with the doping concentration from magnetic measurements. The magnetization reverses from positive to negative with the temperature decreasing across the compensation temperature at the critical concentration x = 0.2. Meanwhile, the exchange bias field of the SEB reverses from large negative values to positive ones. Our findings allow us to propose that the spin state transition caused by inhomogeneity is considered to play an important role in the reversal of the magnetization and the SEB effect.

Near-infrared photodetector with reduced dark current

DOEpatents

Klem, John F; Kim, Jin K

2012-10-30

A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

Quasiparticle relaxation in superconducting nanostructures

NASA Astrophysics Data System (ADS)

Savich, Yahor; Glazman, Leonid; Kamenev, Alex

2017-09-01

We examine energy relaxation of nonequilibrium quasiparticles in "dirty" superconductors with the electron mean free path much shorter than the superconducting coherence length. Relaxation of low-energy nonequilibrium quasiparticles is dominated by phonon emission. We derive the corresponding collision integral and find the quasiparticle relaxation rate. The latter is sensitive to the breaking of time reversal symmetry (TRS) by a magnetic field (or magnetic impurities). As a concrete application of the developed theory, we address quasiparticle trapping by a vortex and a current-biased constriction. We show that trapping of hot quasiparticles may predominantly occur at distances from the vortex core, or the constriction, significantly exceeding the superconducting coherence length.

Single electron counting using a dual MCP assembly

NASA Astrophysics Data System (ADS)

Yang, Yuzhen; Liu, Shulin; Zhao, Tianchi; Yan, Baojun; Wang, Peiliang; Yu, Yang; Lei, Xiangcui; Yang, Luping; Wen, Kaile; Qi, Ming; Heng, Yuekun

2016-09-01

The gain, pulse height resolution and peak-to-valley ratio of single electrons detected by using a Chevron configured Microchannel Plate (MCP) assembly are studied. The two MCPs are separated by a 280 μm gap and are biased by four electrodes. The purpose of the study is to determine the optimum bias voltage arrangements for single electron counting. By comparing the results of various bias voltage combinations, we conclude that good performance for the electron counting can be achieved by operating the MCP assembly in saturation mode. In addition, by applying a small reverse bias voltage across the gap while adjusting the bias voltages of the MCPs, optimum performance of electron counting can be obtained.

Deep diode arrays for X-ray detection

NASA Technical Reports Server (NTRS)

Zemel, J. N.

1984-01-01

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

High-performance Ge p-i-n photodetector on Si substrate

NASA Astrophysics Data System (ADS)

Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

2015-05-01

High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

Effect of different substitution position on the switching behavior in single-molecule device with carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Yang, Jingjuan; Han, Xiaoxiao; Yuan, Peipei; Bian, Baoan; Wang, Yixiang

2018-01-01

We investigate the electronic transport properties of dihydroazulene (DHA) and vinylheptafulvene (VHF) molecule sandwiched between two carbon nanotubes using density functional theory and non-equilibrium Green's function. The device displays significantly switching behavior between DHA and VHF isomerizations. It is found the different substitution position of F in the molecule influences the switching ratio of device, which is analyzed by transmission spectra and molecular projected self-consistent Hamiltonian. The observed negative differential resistance effect is explained by transmission spectra and transmission eigenstates of transmission peak in the bias window. The observed reverse of current in VHF form in which two H atoms on the right side of the benzene ring of the molecule are replaced by F is explained by transmission spectra and molecule-electrode coupling with the varied bias. The results suggest that the reasonable substitution position of molecule may improve the switching ratio, displaying a potential application in future molecular circuit.

High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

NASA Astrophysics Data System (ADS)

Ting, David Z.; Soibel, Alexander; Höglund, Linda; Hill, Cory J.; Keo, Sam A.; Fisher, Anita; Gunapala, Sarath D.

2016-09-01

The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.

Reducing preference reversals: The role of preference imprecision and nontransparent methods.

PubMed

Pinto-Prades, José Luis; Sánchez-Martínez, Fernando Ignacio; Abellán-Perpiñán, José María; Martínez-Pérez, Jorge E

2018-05-16

Preferences elicited with matching and choice usually diverge (as characterised by preference reversals), violating a basic rationality requirement, namely, procedure invariance. We report the results of an experiment that shows that preference reversals between matching (Standard Gamble in our case) and choice are reduced when the matching task is conducted using nontransparent methods. Our results suggest that techniques based on nontransparent methods are less influenced by biases (i.e., compatibility effects) than transparent methods. We also observe that imprecision of preferences influences the degree of preference reversals. The preference reversal phenomenon is less strong in subjects with more precise preferences. Copyright © 2018 John Wiley & Sons, Ltd.

Field reversed configuration confinement enhancement through edge biasing and neutral beam injection.

PubMed

Tuszewski, M; Smirnov, A; Thompson, M C; Korepanov, S; Akhmetov, T; Ivanov, A; Voskoboynikov, R; Schmitz, L; Barnes, D; Binderbauer, M W; Brown, R; Bui, D Q; Clary, R; Conroy, K D; Deng, B H; Dettrick, S A; Douglass, J D; Garate, E; Glass, F J; Gota, H; Guo, H Y; Gupta, D; Gupta, S; Kinley, J S; Knapp, K; Longman, A; Hollins, M; Li, X L; Luo, Y; Mendoza, R; Mok, Y; Necas, A; Primavera, S; Ruskov, E; Schroeder, J H; Sevier, L; Sibley, A; Song, Y; Sun, X; Trask, E; Van Drie, A D; Walters, J K; Wyman, M D

2012-06-22

Field reversed configurations (FRCs) with high confinement are obtained in the C-2 device by combining plasma gun edge biasing and neutral beam injection. The plasma gun creates an inward radial electric field that counters the usual FRC spin-up. The n = 2 rotational instability is stabilized without applying quadrupole magnetic fields. The FRCs are nearly axisymmetric, which enables fast ion confinement. The plasma gun also produces E × B shear in the FRC edge layer, which may explain the observed improved particle transport. The FRC confinement times are improved by factors 2 to 4, and the plasma lifetimes are extended from 1 to up to 4 ms.

Enhanced asymmetric magnetization reversal in nanoscale Co/CoO arrays: competition between exchange bias and magnetostatic coupling.

PubMed

Girgis, E; Portugal, R D; Loosvelt, H; Van Bael, M J; Gordon, I; Malfait, M; Temst, K; Van Haesendonck, C; Leunissen, L H A; Jonckheere, R

2003-10-31

Magnetization reversal was studied in square arrays of square Co/CoO dots with lateral size varying between 200 and 900 nm. While reference nonpatterned Co/CoO films show the typical shift and increased width of the hysteresis loop due to exchange bias, the patterned samples reveal a pronounced size dependence. In particular, an anomaly appears in the upper branch of the magnetization cycle and becomes stronger as the dot size decreases. This anomaly, which is absent at room temperature in the patterned samples, can be understood in terms of a competition between magnetostatic interdot interaction and exchange anisotropy during the magnetic switching process.

I-V curve hysteresis induced by gate-free charging of GaAs nanowires' surface oxide

NASA Astrophysics Data System (ADS)

Alekseev, P. A.; Geydt, P.; Dunaevskiy, M. S.; Lähderanta, E.; Haggrén, T.; Kakko, J.-P.; Lipsanen, H.

2017-09-01

The control of nanowire-based device performance requires knowledge about the transport of charge carriers and its limiting factors. We present the experimental and modeled results of a study of electrical properties of GaAs nanowires (NWs), considering their native oxide cover. Measurements of individual vertical NWs were performed by conductive atomic force microscopy (C-AFM). Experimental C-AFM observations with numerical simulations revealed the complex resistive behavior of NWs. A hysteresis of current-voltage characteristics of the p-doped NWs as-grown on substrates with different types of doping was registered. The emergence of hysteresis was explained by the trapping of majority carriers in the surface oxide layer near the reverse-biased barriers under the source-drain current. It was found that the accumulation of charge increases the current for highly doped p+-NWs on n+-substrates, while for moderately doped p-NWs on p+-substrates, charge accumulation decreases the current due to blocking of the conductive channel of NWs.

Rectification of electronic heat current by a hybrid thermal diode.

PubMed

Martínez-Pérez, Maria José; Fornieri, Antonio; Giazotto, Francesco

2015-04-01

Thermal diodes--devices that allow heat to flow preferentially in one direction--are one of the key tools for the implementation of solid-state thermal circuits. These would find application in many fields of nanoscience, including cooling, energy harvesting, thermal isolation, radiation detection and quantum information, or in emerging fields such as phononics and coherent caloritronics. However, both in terms of phononic and electronic heat conduction (the latter being the focus of this work), their experimental realization remains very challenging. A highly efficient thermal diode should provide a difference of at least one order of magnitude between the heat current transmitted in the forward temperature (T) bias configuration (Jfw) and that generated with T-bias reversal (Jrev), leading to ℛ = Jfw/Jrev ≫ 1 or ≪ 1. So far, ℛ ≈ 1.07-1.4 has been reported in phononic devices, and ℛ ≈ 1.1 has been obtained with a quantum-dot electronic thermal rectifier at cryogenic temperatures. Here, we show that unprecedentedly high ratios of ℛ ≈ 140 can be achieved in a hybrid device combining normal metals tunnel-coupled to superconductors. Our approach provides a high-performance realization of a thermal diode for electronic heat current that could be successfully implemented in true low-temperature solid-state thermal circuits.

"Racial bias in mock juror decision-making: A meta-analytic review of defendant treatment": Correction to Mitchell et al. (2005).

PubMed

2017-06-01

Reports an error in "Racial Bias in Mock Juror Decision-Making: A Meta-Analytic Review of Defendant Treatment" by Tara L. Mitchell, Ryann M. Haw, Jeffrey E. Pfeifer and Christian A. Meissner ( Law and Human Behavior , 2005[Dec], Vol 29[6], 621-637). In the article, all of the numbers in Appendix A were correct, but the signs were reversed for z' in a number of studies, which are listed. Also, in Appendix B, some values were incorrect, some signs were reversed, and some values were missing. The corrected appendix is included. (The following abstract of the original article appeared in record 2006-00971-001.) Common wisdom seems to suggest that racial bias, defined as disparate treatment of minority defendants, exists in jury decision-making, with Black defendants being treated more harshly by jurors than White defendants. The empirical research, however, is inconsistent--some studies show racial bias while others do not. Two previous meta-analyses have found conflicting results regarding the existence of racial bias in juror decision-making (Mazzella & Feingold, 1994, Journal of Applied Social Psychology, 24, 1315-1344; Sweeney & Haney, 1992, Behavioral Sciences and the Law, 10, 179-195). This research takes a meta-analytic approach to further investigate the inconsistencies within the empirical literature on racial bias in juror decision-making by defining racial bias as disparate treatment of racial out-groups (rather than focusing upon the minority group alone). Our results suggest that a small, yet significant, effect of racial bias in decision-making is present across studies, but that the effect becomes more pronounced when certain moderators are considered. The state of the research will be discussed in light of these findings. (PsycINFO Database Record (c) 2017 APA, all rights reserved).

A leftward bias however you look at it: Revisiting the emotional chimeric face task as a tool for measuring emotion lateralization.

PubMed

R Innes, Bobby; Burt, D Michael; Birch, Yan K; Hausmann, Markus

2015-12-28

Left hemiface biases observed within the Emotional Chimeric Face Task (ECFT) support emotional face perception models whereby all expressions are preferentially processed by the right hemisphere. However, previous research using this task has not considered that the visible midline between hemifaces might engage atypical facial emotion processing strategies in upright or inverted conditions, nor controlled for left visual field (thus right hemispheric) visuospatial attention biases. This study used novel emotional chimeric faces (blended at the midline) to examine laterality biases for all basic emotions. Left hemiface biases were demonstrated across all emotional expressions and were reduced, but not reversed, for inverted faces. The ECFT bias in upright faces was significantly increased in participants with a large attention bias. These results support the theory that left hemiface biases reflect a genuine bias in emotional face processing, and this bias can interact with attention processes similarly localized in the right hemisphere.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

NASA Astrophysics Data System (ADS)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

2018-03-01

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

The selective serotonin reuptake inhibitor, escitalopram, enhances inhibition of prepotent responding and spatial reversal learning

PubMed Central

Brown, Holden D.; Amodeo, Dionisio A.; Sweeney, John A.; Ragozzino, Michael E.

2011-01-01

Previous findings indicate treatment with a selective serotonin reuptake inhibitor (SSRI) facilitates behavioral flexibility when conditions require inhibition of a learned response pattern. The present experiment investigated whether acute treatment with the SSRI, escitalopram, affects behavioral flexibility when conditions require inhibition of a naturally-biased response pattern (elevated conflict test) and/or reversal of a learned response pattern (spatial reversal learning). An additional experiment was carried out to determine whether escitalopram, at doses that affected behavioral flexibility, also reduced anxiety as tested in the elevated plus-maze. In each experiment, Long-Evans rats received an intraperitoneal injection of either saline or escitalopram (0.03, 0.3 or 1.0 mg/kg) 30 minutes prior to behavioral testing. Escitalopram, at all doses tested, enhanced acquisition in the elevated conflict test, but did not affect performance in the elevated plus-maze. Escitalopram (0.3 and 1.0 mg/kg) did not alter acquisition of the spatial discrimination, but facilitated reversal learning. In the elevated conflict and spatial reversal learning test, escitalopram enhanced the ability to maintain the relevant strategy after being initially selected. The present findings suggest that enhancing serotonin transmission with a SSRI facilitates inhibitory processes when conditions require a shift away from either a naturally-biased response pattern or a learned choice pattern. PMID:22219222

Dual Electrolytic Plasma Processing for Steel Surface Cleaning and Passivation

NASA Astrophysics Data System (ADS)

Yang, L.; Zhang, P.; Shi, J.; Liang, J.; Tian, W. B.; Zhang, Y. M.; Sun, Z. M.

2017-10-01

To remove the rust on rebars and passivate the fresh surfaces, electrodes reversing electrolytic plasma processing (EPP) was proposed and conducted in a 10 wt.% Na2CO3 aqueous solution. The morphology and the composition of the surface were investigated by SEM and XPS. Experimental results show that the rust on the surface was removed effectively by cathode EPP, and a passive film containing Cr2O3 was achieved by the succeeding anode EPP treatment, by a simple operation of reversing the bias. The corrosion resistance was evaluated in a 3.5 wt.% NaCl aqueous solution using an electrochemical workstation. In comparison, the corrosion resistance was improved by the succeeding anode EPP treatment, which is evidenced by a positive shift of the open-circuit potential, an increase in the electrochemical impedance representing the inner layer by 76.8% and the decrease in the corrosion current density by 49.6%. This is an effective and environment-friendly technique to clean and passivate rebars and similar steel materials.

Solid-state diode-like chemiluminescence based on serial, immobilized concentration gradients in mixed-valent poly[Ru(vbpy){sub 3}](PF{sub 6}){sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maness, K.M.; Terrill, R.H.; Meyer, T.J.

The electronic conductivity and electrogenerated chemiluminescence (ECL) of thin, electropolymerized films of the fixed-site redox polymer poly[Ru(vbpy){sub 3}](PF{sub 6}){sub 2} (vbpy = 4-vinyl-4`-methyl-2,2`-bipyridine) on Pt interdigitated array electrodes were examined for both solvent-swollen and dry films. In both cases emission arose from {sup *}Ru{sup 2+} produced via the electron-transfer reaction between Ru{sup 3+} and Ru{sup 1+} states within the film (Ru = Ru-(vbpy){sub 3}). Dry films contained fixed concentration gradients of Ru{sup 3+}, Ru{sup 2+}, and Ru{sup 1+} states which were first introduced in an acetonitrile-swollen film via the constant potential oxidation and reduction of Ru{sup 2+} at opposing IDAmore » fingers. The gradients were then immobilized by drying and cooling the film while retaining the inter-electrode bias (2.6V). The resulting dried and cooled films responded rapidly to changes in voltage bias and exhibited diode-like characteristics, conducting and emitting light at biases >2.6 V and undergoing a reverse bias breakdown current, unassociated with light emission, at ca. -5.5 V. At 0{degree}C the optimum quantum efficiency of solid-state ECL emission ({phi}{sub ECL}) was similar to that in solvent-swollen films: 0.0003 photon/electron. In contrast to the dry films, solvent-swollen films were slow to respond to changes in voltage bias and did not exhibit diode-like behavior. 18 refs., 7 figs.« less

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

Cooperative effect of pH-dependent ion transport within two symmetric-structured nanochannels.

PubMed

Meng, Zheyi; Chen, Yang; Li, Xiulin; Xu, Yanglei; Zhai, Jin

2015-04-15

A novel and simple design is introduced to construct bichannel nanofluid diodes by combining two poly(ethylene terephthalate) (PET) films with columnar nanochannel arrays varying in size or in surface charge. This type of bichannel device performs obvious ion current rectification, and the pH-dependent tunability and degree of rectification can be improved by histidine modification. The origin of the ion current rectification and its pH-dependent tunability are attributed to the cooperative effect of the two columnar half-channels and the applied bias on the mobile ions. As a result of surface groups on the bichannel being charged with different polarities or degrees at different pH values, the function of the bichannel device can be converted from a nanofluid diode to a normal nanochannel or to a reverse diode.

Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Parkhomenko, Hryhorii; Solovan, Mykhaylo; Brus, Viktor; Maystruk, Eduard; Maryanchuk, Pavlo

2018-01-01

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW.

Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p- i- n heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Lichun; Zhao, Fengzhou; Wang, Caifeng; Wang, Feifei; Huang, Ruizhi; Li, Qingshan

2015-07-01

We demonstrate an efficient ultraviolet (UV) photodetector operating at room temperature based on n-ZnO nanorods/ i-ZnO/ p-GaN heterojunctions. We employ x-ray diffraction and field-emission scanning electron microscopy to confirm the high quality of the ZnO nanorods using an undoped ZnO film as the interlayer. Then, we investigate the photoelectric properties of the fabricated photodetector with UV light illumination under a different reverse bias. Based on the current-voltage curve, the photocurrent to dark current ratio is approximately 73.3 at -4 V. At zerobias voltage, the peak responsivity was 138.9 mA/W at 362 nm under front-illumination conditions. Time-varying measurements indicate the reproducibility and stability of the heterojunction photodetector. [Figure not available: see fulltext.

Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Luo, B.; Ren, F.; Allums, K. K.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R.; Fitch, R. C.; Gillespie, J. K.; Jenkins, T. J.; Dettmer, R.; Sewell, J.; Via, G. D.; Crespo, A.; Baca, A. G.; Shul, R. J.

2003-06-01

AlGaN/GaN high electron mobility transistors with either MgO or Sc 2O 3 surface passivation were irradiated with 40 MeV protons at a dose of 5×10 9 cm -2. While both forward and reverse bias current were decreased in the devices as a result of decreases in channel doping and introduction of generation-recombination centers, there was no significant change observed in gate lag measurements. By sharp contrast, unpassivated devices showed significant decreases in drain current under pulsed conditions for the same proton dose. These results show the effectiveness of the oxide passivation in mitigating the effects of surface states present in the as-grown structures and also of surface traps created by the proton irradiation.

Single-molecule designs for electric switches and rectifiers.

PubMed

Kornilovitch, Pavel; Bratkovsky, Alexander; Williams, Stanley

2003-12-01

A design for molecular rectifiers is proposed. Current rectification is based on the spatial asymmetry of a molecule and requires only one resonant conducting molecular orbital. Rectification is caused by asymmetric coupling of the orbital to the electrodes, which results in asymmetric movement of the two Fermi levels with respect to the orbital under external bias. Results from numerical studies of the family of suggested molecular rectifiers, HS-(CH(2))(n)-C(6)H(4)(CH(2))(m)SH, are presented. Current rectification ratios in excess of 100 are achievable for n = 2 and m > 6. A class of bistable stator-rotor molecules is proposed. The stationary part connects the two electrodes and facilitates electron transport between them. The rotary part, which has a large dipole moment, is attached to an atom of the stator via a single sigma bond. Electrostatic bonds formed between the oxygen atom of the rotor and hydrogen atoms of the stator make the symmetric orientation of the dipole unstable. The rotor has two potential minima with equal energy for rotation about the sigma bond. The dipole can be flipped between the two states by an external electric field. Both rotor-orientation states have asymmetric current-voltage characteristics that are the reverse of each other, so they are distinguishable electrically. Theoretical results on conformation, energy barriers, retention times, switching voltages, and current-voltage characteristics are presented for a particular stator-rotor molecule. Such molecules could be the base for single-molecule switches, reversible diodes, and other molecular electronic devices.

Counselor Bias in Working with Gay Men and Lesbians: A Commentary on Barret and Barzan (1996).

ERIC Educational Resources Information Center

Donaldson, Steven M.

1998-01-01

Comments on R. Barret and R. Barzan (1996), who do well in exploring the spiritual experiences of gay men and lesbians but in the process set up a precedent of reverse discrimination against clients whose religious beliefs proscribe homosexual behavior. Suggestions are offered to sensitize counseling professionals to such bias. (Author/MKA)

Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts

PubMed Central

Chen, Changxin; Liao, Chenghao; Wei, Liangming; Zhong, Hanqing; He, Rong; Liu, Qinran; Liu, Xiaodong; Lai, Yunfeng; Song, Chuanjuan; Jin, Tiening; Zhang, Yafei

2016-01-01

A p-i-n junction diode based on the selectively doped single-walled carbon nanotube (SWCNT) had been investigated, in which two opposite ends of individual SWCNT channel were doped into the p- and n-type SWCNT respectively while the middle segment of SWCNT was kept as the intrinsic. The symmetric and asymmetric contacts were used to fabricate the p-i-n junction diodes respectively and studied the effect of the contact on the device characteristics. It was shown that a low reverse saturation current of ~20 pA could be achieved by these both diodes. We found that the use of the asymmetric contact can effectively improve the performance of the p-i-n diode, with the rectification ratio enhanced from ~102 for the device with the Au/Au symmetric contact to >103 for the one with the Pd/Al asymmetric contact. The improvement of the device performance by the asymmetric-contact structure was attributed to the decrease of the effective Schottky-barrier height at the contacts under forward bias, increasing the forward current of the diode. The p-i-n diode with asymmetric contact also had a higher rectification ratio than its counterpart before doping the SWCNT channel, which is because that the p-i-n junction in the device decreased the reverse saturated current. PMID:26915400

Zero bias conductance peak in InAs nanowire coupled to superconducting electrodes

NASA Astrophysics Data System (ADS)

Kim, Nam-Hee; Shin, Yun-Sok; Kim, Hong-Seok; Song, Jin-Dong; Doh, Yong-Joo

2018-04-01

We report the occurrence of the zero-bias conductance peak (ZBCP) in an InAs nanowire coupled to PbIn superconductors with varying temperature, bias voltage, and magnetic field. The ZBCP is suppressed with increasing temperature and bias voltage above the Thouless energy of the nanowire. Applying a magnetic field also diminishes the ZBCP when the resultant magnetic flux reaches the magnetic flux quantum h/2e. Our observations are consistent with theoretical expectations of reflectionless tunneling, in which the phase coherence between an electron and its Andreev-reflected hole induces the ZBCP as long as time-reversal symmetry is preserved.

Bias-induced conformational switching of supramolecular networks of trimesic acid at the solid-liquid interface

NASA Astrophysics Data System (ADS)

Ubink, J.; Enache, M.; Stöhr, M.

2018-05-01

Using the tip of a scanning tunneling microscope, an electric field-induced reversible phase transition between two planar porous structures ("chickenwire" and "flower") of trimesic acid was accomplished at the nonanoic acid/highly oriented pyrolytic graphite interface. The chickenwire structure was exclusively observed for negative sample bias, while for positive sample bias only the more densely packed flower structure was found. We suggest that the slightly negatively charged carboxyl groups of the trimesic acid molecule are the determining factor for this observation: their adsorption behavior varies with the sample bias and is thus responsible for the switching behavior.

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Organic semiconductor photodiode based on indigo carmine/n-Si for optoelectronic applications

NASA Astrophysics Data System (ADS)

Ganesh, V.; Manthrammel, M. Aslam; Shkir, Mohd.; Yahia, I. S.; Zahran, H. Y.; Yakuphanoglu, F.; AlFaify, S.

2018-06-01

The fabrication of indigo carmine/n-Si photodiode has been done, and a robust dark and photocurrent-voltage ( I- V), capacitance vs. voltage ( C-V) and conductance vs. voltage ( G-V) studies were done over a wide range of applied voltage and frequencies. The surface morphology was assessed by atomic force microscope (AFM), and the grain size was measured to be about 66 nm. The reverse current increased with both increasing illumination intensity and bias potential, whereas the forward current increased exponentially with bias potential. The responsivity value was also calculated. Barrier height and ideality factor of diode were estimated through a log (I) vs log (V) plot, and obtained to be 0.843 and 4.75 eV, respectively. The Vbi values are found between 0.95 and 1.2V for frequencies ranging between 100 kHz and 1 MHz. The value of R s is found to be lower at higher frequencies which may be due to a certain distribution of localized interface states. A strong frequency and voltage dependency were observed for interface states density N ss in the present indigo carmine/n-Si photodiode, and this explained the observed capacitance and resistance variation with frequency. These results suggest that the fabricated diode has the potential to be applied in optoelectronic devices.

Push the flash floating gate memories toward the future low energy application

NASA Astrophysics Data System (ADS)

Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.

2013-01-01

In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.

Controlling the mode of operation of organic transistors through side-chain engineering.

PubMed

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B; Bandiello, Enrico; Hanifi, David A; Sessolo, Michele; Malliaras, George G; McCulloch, Iain; Rivnay, Jonathan

2016-10-25

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

Controlling the mode of operation of organic transistors through side-chain engineering

PubMed Central

Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B.; Bandiello, Enrico; Hanifi, David A.; Sessolo, Michele; Malliaras, George G.; McCulloch, Iain; Rivnay, Jonathan

2016-01-01

Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors. PMID:27790983

Magnetization reversal of an individual exchange-biased permalloy nanotube

NASA Astrophysics Data System (ADS)

Buchter, A.; Wölbing, R.; Wyss, M.; Kieler, O. F.; Weimann, T.; Kohlmann, J.; Zorin, A. B.; Rüffer, D.; Matteini, F.; Tütüncüoglu, G.; Heimbach, F.; Kleibert, A.; Fontcuberta i Morral, A.; Grundler, D.; Kleiner, R.; Koelle, D.; Poggio, M.

2015-12-01

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilever and positioned in order to optimally couple its stray flux into a Nb nanoSQUID. We are thus able to measure both the NT's volume magnetization by dynamic cantilever magnetometry and its stray flux using the nanoSQUID. We observe a training effect and a temperature dependence in the magnetic hysteresis, suggesting an exchange bias. We find a low blocking temperature TB=18 ±2 K, indicating the presence of a thin antiferromagnetic native oxide, as confirmed by x-ray absorption spectroscopy on similar samples. Furthermore, we measure changes in the shape of the magnetic hysteresis as a function of temperature and increased training. These observations show that the presence of a thin exchange-coupled native oxide modifies the magnetization reversal process at low temperatures. Complementary information obtained via cantilever and nanoSQUID magnetometry allows us to conclude that, in the absence of exchange coupling, this reversal process is nucleated at the NT's ends and propagates along its length as predicted by theory.

Rectifying behavior in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure

NASA Astrophysics Data System (ADS)

Wang, Caiwei; Jiang, Yang; Ma, Ziguang; Zuo, Peng; Yan, Shen; Die, Junhui; Wang, Lu; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2018-05-01

Rectifying characteristics induced by the polarization fields are achieved in the GaN/graded-AlxGa1‑xN/GaN double heterojunction structure (DHS). By grading AlxGa1‑xN from x  =  0.4(0.3) to 0.1, the DHS displays a better conductivity for smaller reverse bias than for forward bias voltages (reverse rectifying behavior) which is opposite to p–n junction rectifying characteristics. The mechanism of reverse rectifying behavior is illustrated via calculating the energy band structures of the samples. The band gap narrowing caused by decreasing Al composition could compensate the for the band tilt due to the polarization effect in AlxGa1‑xN barriers, thus lowering the barrier height for electron transport from top to bottom. The reverse rectifying behavior could be enhanced by increasing the Al content and the thickness of the multi-layer graded AlxGa1‑xN barriers. This work gives a better understanding of the mechanism of carrier transport in a DHS and makes it possible to realize novel GaN-based heterojunction transistors.

Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads

NASA Astrophysics Data System (ADS)

Mizugaki, Yoshinao; Takiguchi, Masashi; Tamura, Nobuyuki; Shimada, Hiroshi

2018-03-01

We report electric and magnetic field responses of single-electron transistors (SETs) comprising a superconducting island with ferromagnetic (FM) leads. We fabricated two SETs, one of which had relatively high resistance and the other had relatively low resistance. The SETs had two states for the gate charge: SET-ON or SET-OFF. They also had two states for the FM lead magnetization: parallel (P) or anti-parallel (AP) configuration. Current-voltage characteristics of four SET states (“P & SET-ON,” “P & SET-OFF,” “AP & SET-ON,” and “AP & SET-OFF”) were measured at approximately 0.1 K in a compact dilution refrigerator. Magnetoresistance ratio (MRR) values were obtained for the SET-ON and SET-OFF states, respectively. The higher-resistance SET1 exhibited positive MRR values for all measured bias voltages. The MRR enhancement was confirmed for the SET-OFF state, which agreed well with the co-tunneling model. The lower-resistance SET2, on the other hand, exhibited negative and positive MRR values for higher and lower bias voltage conditions, respectively. The bias voltage for the MRR polarity reversal was changed by the gate voltage. It was also confirmed that the co-tunneling model was partially valid for negative MRR values.

Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates

NASA Astrophysics Data System (ADS)

Mikhelashvili, V.; Cristea, D.; Meyler, B.; Yofis, S.; Shneider, Y.; Atiya, G.; Cohen-Hyams, T.; Kauffmann, Y.; Kaplan, W. D.; Eisenstein, G.

2015-01-01

We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm-880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.

Attention bias for chocolate increases chocolate consumption--an attention bias modification study.

PubMed

Werthmann, Jessica; Field, Matt; Roefs, Anne; Nederkoorn, Chantal; Jansen, Anita

2014-03-01

The current study examined experimentally whether a manipulated attention bias for food cues increases craving, chocolate intake and motivation to search for hidden chocolates. To test the effect of attention for food on subsequent chocolate intake, attention for chocolate was experimentally modified by instructing participants to look at chocolate stimuli ("attend chocolate" group) or at non-food stimuli ("attend shoes" group) during a novel attention bias modification task (antisaccade task). Chocolate consumption, changes in craving and search time for hidden chocolates were assessed. Eye-movement recordings were used to monitor the accuracy during the experimental attention modification task as possible moderator of effects. Regression analyses were conducted to test the effect of attention modification and modification accuracy on chocolate intake, craving and motivation to search for hidden chocolates. Results showed that participants with higher accuracy (+1 SD), ate more chocolate when they had to attend to chocolate and ate less chocolate when they had to attend to non-food stimuli. In contrast, for participants with lower accuracy (-1 SD), the results were exactly reversed. No effects of the experimental attention modification on craving or search time for hidden chocolates were found. We used chocolate as food stimuli so it remains unclear how our findings generalize to other types of food. These findings demonstrate further evidence for a link between attention for food and food intake, and provide an indication about the direction of this relationship. Copyright © 2013 Elsevier Ltd. All rights reserved.

Field-Induced Disorder and Carrier Localization in Molecular Organic Transistors

NASA Astrophysics Data System (ADS)

Ando, M.; Minakata, T.; Duffy, C.; Sirringhaus, H.

2009-06-01

We propose a "field-induced polymorphous disorder" model to explain bias-stress instability in molecular organic thin-film transistors, based on the experimental results showing the strong correlation between the micro-structural change in semiconductor layer composed of penrtacene molecules and the threshold voltage (Vth) shift due to electron trapping in a reversible manner under the successive bias-stress, thermal annealing, and light irradiation.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

NASA Astrophysics Data System (ADS)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Electromechanical resistive switching via back-to-back Schottky junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Lijie, E-mail: L.Li@swansea.ac.uk

The physics of the electromechanical resistive switching is uncovered using the theory of back-to-back Schottky junctions combined with the quantum domain space charge transport. A theoretical model of the basic element of resistive switching devices realized by the metal-ZnO nanowires-metal structure has been created and analyzed. Simulation results show that the reverse biased Schottky junction and the air gap impedance dominate the current-voltage relation at higher external voltages; thereby electromechanically varying the air gap thickness causes the device exhibit resistive tuning characteristics. As the device dimension is in nanometre scale, investigation of the model based on quantum mechanics has alsomore » been conducted.« less

Effect of temperature on series resistance of organic/inorganic semiconductor junction diode

NASA Astrophysics Data System (ADS)

Tripathi, Udbhav; Kaur, Ramneek; Bharti, Shivani

2016-05-01

The paper reports the fabrication and characterization of CuPc/n-Si organic/inorganic semiconductor diode. Copper phthalocyanine, a p-type organic semiconductor layer has been deposited on Si substrate by thermal evaporation technique. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Temperature dependence of the schottky diode parameters has been studied and discussed in the temperature range, 303 K to 353 K. Series resistance of the diode has been determined using Cheung's function method. Series resistance decreases with increase in temperature. The large value of series resistance at low temperature has been explained on the basis of barrier inhomogeneities in the diode.

Low-frequency random telegraphic noise and 1/f noise in the rare-earth manganite Pr0.63Ca0.37MnO3 near the charge-ordering transition

NASA Astrophysics Data System (ADS)

Bid, Aveek; Guha, Ayan; Raychaudhuri, A. K.

2003-05-01

We have studied low-frequency resistance fluctuations (noise) in a single crystal of the rare-earth perovskite manganite Pr0.63Ca0.37MnO3, which shows a charge-ordering transition at a temperature TCO≈245 K. The measurements were made across the charge-ordering transition covering the temperature range 200 K

Organic Bistable Memory Switching Phenomena in Squarylium-Dye Langmuir-Blodgett Films

NASA Astrophysics Data System (ADS)

Kushida, Masahito; Inomata, Hisao; Miyata, Hiroshi; Harada, Kieko; Saito, Kyoichi; Sugita, Kazuyuki

2003-06-01

We have investigated the relationship between the switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett (SQ LB) films. The current-voltage characteristics of SQ LB films sandwiched between the top gold electrode and the bottom aluminum electrode indicated conductance switching phenomena below the temperature of 100°C but not at 140°C. Current densities suddenly increased at switching voltages between 2 and 4 V. The switching voltage increased as the temperature increased between room temperature and 100°C. Current densities were 50-100 μA/cm2 in a low-impedance state (ON state). A high-impedance state (OFF state) can be recovered by applying a reverse bias, and therefore, these bistable devices are ideal for memory applications. The dependence of conductance switching phenomena and ultraviolet-visible absorption spectra on annealing temperatures was studied. The results revealed that conductance switching phenomena were caused by the presence of H-like aggregates in the SQ LB films.

Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

NASA Astrophysics Data System (ADS)

Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

2018-04-01

We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

Adaptive Variable Bias Magnetic Bearing Control

NASA Technical Reports Server (NTRS)

Johnson, Dexter; Brown, Gerald V.; Inman, Daniel J.

1998-01-01

Most magnetic bearing control schemes use a bias current with a superimposed control current to linearize the relationship between the control current and the force it delivers. With the existence of the bias current, even in no load conditions, there is always some power consumption. In aerospace applications, power consumption becomes an important concern. In response to this concern, an alternative magnetic bearing control method, called Adaptive Variable Bias Control (AVBC), has been developed and its performance examined. The AVBC operates primarily as a proportional-derivative controller with a relatively slow, bias current dependent, time-varying gain. The AVBC is shown to reduce electrical power loss, be nominally stable, and provide control performance similar to conventional bias control. Analytical, computer simulation, and experimental results are presented in this paper.

SWIR HgCdTe avalanche photiode focal plane array performances evaluation

NASA Astrophysics Data System (ADS)

de Borniol, E.; Rothman, J.; Salveti, F.; Feautrier, P.

2017-11-01

One of the main challenges of modern astronomical instruments like adaptive optics (AO) systems or fringe trackers is to deal with the very low photons flux detection scenarios. The typical timescale of atmospheric turbulences being in the range of some tens of milliseconds, infrared wavefront sensors for AO systems needs frame rates higher than 1 KHz leading to integration times lower than 1 ms. This integration time associated with a low irradiance results in a few number of integrated photons per frame per pixel. To preserve the information coming from this weak signal, the focal plane array (FPA) has to present a low read out noise, a high quantum efficiency and a low dark current. Up to now, the output noise of high speed near infrared sensors is limited by the silicon read out circuit noise. The use of HgCdTe avalanche photodiodes with high gain at moderate reverse bias and low excess noise seems then a logical way to reduce the impact of the read noise on images signal to noise ratio. These low irradiance passive imaging applications with integration times in the millisecond range needs low photodiode dark current and low background current. These requirements lead to the choice of the photodiode cut off wavelength. The short wave infrared (SWIR) around 3 μm is a good compromise between the gain that can be obtain for a given APD bias and the background and dark current. The CEA LETI HgCdTe APD technology, and a fine analysis of the gain curve characteristic are presented in [1] and won't be detailed here. The response time of the APD is also a key factor for a high frame rate FPA. This parameter has been evaluated in [2] and the results shows cut off frequencies in the GHz range. In this communication we report the performances of a SWIR APD FPA designed and fabricated by CEA LETI and SOFRADIR for astrophysical applications. This development was made in the frame of RAPID, a 4 years R&D project funded by the French FUI (Fond Unique Interministériel). This project involves industrial and academic partners from the field of advanced infrared focal plane arrays fabrication (SOFRADIR and CEA LETI) and of astronomical/defense institutes (IPAG, LAM, ONERA). The goal of this program is to develop a fast and low noise SWIR camera for astronomical fast applications like adaptive optics wavefront sensing and fringe tracking for astronomical interferometers [3]. The first batch of FPA's was based on liquid-phase epitaxy (LPE) grown photodiode arrays with 3 μm cut off wavelength. In order to get higher avalanche gain for a given photodiode reverse bias voltage, we have made a second batch with a cadmium composition leading to 3.3 μm cut off wavelength (λc). This paper described the read out circuit in the next section. The aim section III is to find the critical parameter that has to be measured to evaluate the signal to noise ratio (SNR) of an APD FPA. The main electro optical characteristics of an FPA based on 3.3μm cut off wavelength APDs are reported in "Rapid FPAs characterisation" section. The dark current evolution with temperature of a 3 μm FPA high and low APD bias is also detailed in this section.

1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadeev, T., E-mail: tagir@mailbox.tu-berlin.de; Arsenijević, D.; Bimberg, D.

2015-01-19

Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 tomore » 300 mA leads to 30 MHz frequency tuning.« less

Concentrator hot-spot testing, phase 1

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.

1987-01-01

Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator module hot-spot qualification test is the test developed for flat-plate modules, issues, such as providing cell illumination, introduce additional complexities into the testing procedure. The same general guidelines apply for protecting concentrator modules from hot-spot stressing as apply to flat-plate modules. Therefore, recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. In addition, a new method for determining the cell temperature in the laboratory or in the field is discussed.

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.

2016-12-15

The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences ofmore » the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.« less

The effect of PS porosity on the structure, optical and electrical properties of ZnS/PS

NASA Astrophysics Data System (ADS)

Wang, Cai-Feng; Hu, Bo; Yi, Hou-Hui; Li, Wei-Bing

2014-03-01

ZnS films were deposited on porous silicon (PS) substrates with different porosities by pulsed laser deposition (PLD). The crystalline structure, surface morphology of ZnS films on PS substrates and optical, electrical properties of ZnS/PS composites were studied. The results show that, ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction corresponding to crystalline structure of cubic phase. With the increase of PS porosity, the XRD diffraction peak intensity of ZnS films decreases. Some voids and cracks appear in the films. Compared with as-prepared PS, the PL peak of PS for ZnS/PS has a blueshift. The larger the porosity of PS, the greater the blueshift is. A new green light emission located around 550 nm is observed with increasing PS porosity, which is ascribed to defect-center luminescence of ZnS. The blue, green emission of ZnS combined with the red emission of PS, a broad photoluminescence band (450-750 nm) is formed. ZnS/PS composites exhibited intense white light emission. The I-V characteristics of ZnS/PS heterojunctions showed rectifying behavior. Under forward bias conditions, the current density is large. Under reverse bias conditions, the current density nearly to be zero. The forward current increases with increasing PS porosity. This work lay a foundation for the realization of electroluminescence of ZnS/PS and solid white light emission devices.

Current-induced damping of nanosized quantum moments in the presence of spin-orbit interaction

NASA Astrophysics Data System (ADS)

Mahfouzi, Farzad; Kioussis, Nicholas

2017-05-01

Motivated by the need to understand current-induced magnetization dynamics at the nanoscale, we have developed a formalism, within the framework of Keldysh Green function approach, to study the current-induced dynamics of a ferromagnetic (FM) nanoisland overlayer on a spin-orbit-coupling (SOC) Rashba plane. In contrast to the commonly employed classical micromagnetic LLG simulations the magnetic moments of the FM are treated quantum mechanically. We obtain the density matrix of the whole system consisting of conduction electrons entangled with the local magnetic moments and calculate the effective damping rate of the FM. We investigate two opposite limiting regimes of FM dynamics: (1) The precessional regime where the magnetic anisotropy energy (MAE) and precessional frequency are smaller than the exchange interactions and (2) the local spin-flip regime where the MAE and precessional frequency are comparable to the exchange interactions. In the former case, we show that due to the finite size of the FM domain, the "Gilbert damping" does not diverge in the ballistic electron transport regime, in sharp contrast to Kambersky's breathing Fermi surface theory for damping in metallic FMs. In the latter case, we show that above a critical bias the excited conduction electrons can switch the local spin moments resulting in demagnetization and reversal of the magnetization. Furthermore, our calculations show that the bias-induced antidamping efficiency in the local spin-flip regime is much higher than that in the rotational excitation regime.

The role of kinetic context in apparent biased agonism at GPCRs

PubMed Central

Klein Herenbrink, Carmen; Sykes, David A.; Donthamsetti, Prashant; Canals, Meritxell; Coudrat, Thomas; Shonberg, Jeremy; Scammells, Peter J.; Capuano, Ben; Sexton, Patrick M.; Charlton, Steven J.; Javitch, Jonathan A.; Christopoulos, Arthur; Lane, J. Robert

2016-01-01

Biased agonism describes the ability of ligands to stabilize different conformations of a GPCR linked to distinct functional outcomes and offers the prospect of designing pathway-specific drugs that avoid on-target side effects. This mechanism is usually inferred from pharmacological data with the assumption that the confounding influences of observational (that is, assay dependent) and system (that is, cell background dependent) bias are excluded by experimental design and analysis. Here we reveal that ‘kinetic context', as determined by ligand-binding kinetics and the temporal pattern of receptor-signalling processes, can have a profound influence on the apparent bias of a series of agonists for the dopamine D2 receptor and can even lead to reversals in the direction of bias. We propose that kinetic context must be acknowledged in the design and interpretation of studies of biased agonism. PMID:26905976

Player Selection Bias in National Football League Draftees.

PubMed

Beyer, Kyle S; Fukuda, David H; Redd, Michael J; Stout, Jeffrey R; Hoffman, Jay R

2016-11-01

Beyer, KS, Fukuda, DH, Redd, MJ, Stout, JR, and Hoffman, JR. Player selection bias in National Football League draftees. J Strength Cond Res 30(11): 2965-2971, 2016-Relative age effects (RAEs) have been studied as a potential factor associated with player selection bias in numerous sports. However, little research has examined the role of RAEs among National Football League (NFL) draftees. The purpose of the current study was to determine the existence of RAEs in NFL draftees from the last 10 NFL drafts. Draftee birth dates were collected and divided into calendar and scholastic quarters (SQ1-SQ4). To determine the presence of RAEs in specific subsets, NFL draftees were grouped according to round drafted, position, level of conference play, and age at the time of the draft. Significant χ tests (p ≤ 0.05) comparing observed birth-date distributions vs. the expected birth-date distribution from the general population were followed up by calculating the standardized residual for each quarter (z > ±2.0 indicating significance). Overall, no RAEs were seen when birth-date distribution was assessed using calendar quarters (p = 0.47), but more draftees were born in SQ2 (December-February) than expected (p < 0.01; z = +2.2). Significantly more draftees were born in SQ2 than expected for middle-round draftees (p = 0.01; z = +2.4), skill positions (p = 0.03; z = +2.3), Power Five college draftees (p < 0.01; z = +2.6), and early draftees (p < 0.01; z = +3.1). However, reverse RAEs were seen among late draftees, with fewer draftees being born in SQ2 (z = -3.6) and more being born in SQ4 (June-August; z = +2.6) than expected. In contrast to previous research, the current study observed significant RAEs in NFL draftees from the last 10 years. This player selection bias should be considered when evaluating long-term athlete development models in American football.

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

PubMed Central

Yang, Haojun; Ma, Ziguang; Jiang, Yang; Wu, Haiyan; Zuo, Peng; Zhao, Bin; Jia, Haiqiang; Chen, Hong

2017-01-01

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used. PMID:28240254

In-Situ Grown P-N Junctions in MERCURY(1-X) Cadmium(x) Telluride for IR Detectors.

NASA Astrophysics Data System (ADS)

Rao, Vithal Rajaram

In-situ grown p-n junctions in mercury cadmium telluride (Hg_{1-x}Cd _{x}Te with x between 0.2-0.3) were fabricated and characterized in this study. Fabrication of these junctions involved the growth of p-n structures at 370^circC on CdTe substrates by Organometallic Vapor Phase Epitaxy. P-type doping with arsenic was achieved by using tertiarybutylarsine as the precursor. N-type doping was obtained either with indium, using trimethylindium as the precursor or by leaving the layer undoped. These p-n structures were processed to fabricate photodiodes. Their electrical performance was evaluated and conclusions regarding current mechanisms which determine their behavior were drawn. By varying the Hg pressure between 0.07-0.13 atm, p-type doping level in the 10^{16 }/cm^3-rm2times10 ^{17}/cm^3 range was achieved. At higher values of Hg pressure, the arsenic doping level in the layer increased significantly. This is possibly due to an increase in Te vacancies, allowing arsenic to occupy more group VI sites where they behave as acceptors. The activation efficiency of arsenic in the layers was measured to be equal to 50%. A high temperature anneal at 415 ^circC for 15 minutes did not result in any increase in the activation efficiency, possibly indicating the presence of stable As-complexes in the layer. Growth of p^+n structures was carried out in a single run. The acceptor concentration in the p-type cap layer was 5-rm10times10 ^{16}/cm^3. Indium doped n-type base layers had a carrier concentration of 1- rm2times10^{16}/cm^3 , while undoped layers had a n-type background carrier concentration of 4-rm6times10^ {14}/cm^3. The cap layer was 3 μm thick with x = 0.30, while the base layer was 8mum thick with x = 0.26. Under the growth conditions, arsenic showed a diffusion coefficient of rm2times10 ^{13}cm^2/s, which was higher than the interdiffusion coefficient of the alloy junction. This resulted in placement of the p-n junction in the lower bandgap base layer, which is necessary for high quantum efficiency devices. Photodiodes showed a cutoff wavelength of 7.5 mum, which correlates with the alloy composition of the base layer. Measured R_0 A of these diodes varied between 1-100 ohm-cm ^2. In the lower R_0A diodes, reverse bias was dominated by surface currents, possibly due to degradation of the passivating layer. Diodes with higher R_0A showed under reverse bias that trap assisted tunneling current dominated their performance. The origin of these traps is process related and could correspond to the presence of inactivated arsenic close to the p-n junction. Forward bias was dominated by diffusion and recombination currents, while the presence of additional leakage currents was evident.

A Retrospective Propensity Score-Matched Early Thromboembolic Event Analysis of Prothrombin Complex Concentrate vs Fresh Frozen Plasma for Warfarin Reversal Prior to Emergency Neurosurgical Procedures.

PubMed

Agarwal, Prateek; Abdullah, Kalil G; Ramayya, Ashwin G; Nayak, Nikhil R; Lucas, Timothy H

2017-06-29

Reversal of therapeutic anticoagulation prior to emergency neurosurgical procedures is required in the setting of intracranial hemorrhage. Multifactor prothrombin complex concentrate (PCC) promises rapid efficacy but may increase the probability of thrombotic complications compared to fresh frozen plasma (FFP). To compare the rate of thrombotic complications in patients treated with PCC or FFP to reverse therapeutic anticoagulation prior to emergency neurosurgical procedures in the setting of intracranial hemorrhage at a level I trauma center. Sixty-three consecutive patients on warfarin therapy presenting with intracranial hemorrhage who received anticoagulation reversal prior to emergency neurosurgical procedures were retrospectively identified between 2007 and 2016. They were divided into 2 cohorts based on reversal agent, either PCC (n = 28) or FFP (n = 35). The thrombotic complications rates within 72 h of reversal were compared using the χ 2 test. A multivariate propensity score matching analysis was used to limit the threat to interval validity from selection bias arising from differences in demographics, laboratory values, history, and clinical status. Thrombotic complications were uncommon in this neurosurgical population, occurring in 1.59% (1/63) of treated patients. There was no significant difference in the thrombotic complication rate between groups, 3.57% (1/28; PCC group) vs 0% (0/35; FFP group). Propensity score matching analysis validated this finding after controlling for any selection bias. In this limited sample, thrombotic complication rates were similar between use of PCC and FFP for anticoagulation reversal in the management of intracranial hemorrhage prior to emergency neurosurgical procedures. Copyright © 2017 by the Congress of Neurological Surgeons

Competing Biases in Mental Arithmetic: When Division Is More and Multiplication Is Less.

PubMed

Shaki, Samuel; Fischer, Martin H

2017-01-01

Mental arithmetic exhibits various biases. Among those is a tendency to overestimate addition and to underestimate subtraction outcomes. Does such "operational momentum" (OM) also affect multiplication and division? Twenty-six adults produced lines whose lengths corresponded to the correct outcomes of multiplication and division problems shown in symbolic format. We found a reliable tendency to over-estimate division outcomes, i.e., reverse OM. We suggest that anchoring on the first operand (a tendency to use this number as a reference for further quantitative reasoning) contributes to cognitive biases in mental arithmetic.

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Visible electroluminescence from a ZnO nanowires/p-GaN heterojunction light emitting diode.

PubMed

Baratto, C; Kumar, R; Comini, E; Faglia, G; Sberveglieri, G

2015-07-27

In the current paper we apply catalyst assisted vapour phase growth technique to grow ZnO nanowires (ZnO nws) on p-GaN thin film obtaining EL emission in reverse bias regime. ZnO based LED represents a promising alternative to III-nitride LEDs, as in free devices: the potential is in near-UV emission and visible emission. For ZnO, the use of nanowires ensures good crystallinity of the ZnO, and improved light extraction from the interface when the nanowires are vertically aligned. We prepared ZnO nanowires in a tubular furnace on GaN templates and characterized the p-n ZnO nws/GaN heterojunction for LED applications. SEM microscopy was used to study the growth of nanowires and device preparation. Photoluminescence (PL) and Electroluminescence (EL) spectroscopies were used to characterize the heterojunction, showing that good quality of PL emission is observed from nanowires and visible emission from the junction can be obtained from the region near ZnO contact, starting from onset bias of 6V.

Efficient two-step photocarrier generation in bias-controlled InAs/GaAs quantum dot superlattice intermediate-band solar cells.

PubMed

Kada, T; Asahi, S; Kaizu, T; Harada, Y; Tamaki, R; Okada, Y; Kita, T

2017-07-19

We studied the effects of the internal electric field on two-step photocarrier generation in InAs/GaAs quantum dot superlattice (QDSL) intermediate-band solar cells (IBSCs). The external quantum efficiency of QDSL-IBSCs was measured as a function of the internal electric field intensity, and compared with theoretical calculations accounting for interband and intersubband photoexcitations. The extra photocurrent caused by the two-step photoexcitation was maximal for a reversely biased electric field, while the current generated by the interband photoexcitation increased monotonically with increasing electric field intensity. The internal electric field in solar cells separated photogenerated electrons and holes in the superlattice (SL) miniband that played the role of an intermediate band, and the electron lifetime was extended to the microsecond scale, which improved the intersubband transition strength, therefore increasing the two-step photocurrent. There was a trade-off relation between the carrier separation enhancing the two-step photoexcitation and the electric-field-induced carrier escape from QDSLs. These results validate that long-lifetime electrons are key to maximising the two-step photocarrier generation in QDSL-IBSCs.

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

Spin valves with spin-engineered domain-biasing scheme

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.

2003-06-01

Synthetic spin-filter spin valves with spin-engineered biasing scheme "sub/Ta/NiFe/IrMn/NiFe/NOL/Cu1/CoFe/Cu2/CoFe/Ru/CoFe/IrMn/Ta" were developed. In the structure, the orthogonal magnetic configuration for biasing and pinning field was obtained by one-step magnetic annealing process by means of spin flop, which eliminated the need for two antiferromagnetic materials with distinctively different blocking temperatures and two-step magnetic annealing as in conventional exchange biasing scheme. The longitudinal domain biasing of spin valves was achieved by using interlayer coupling field through Cu1 spacer. By adjusting the thickness of the Cu1 layer, the interlayer coupling biasing field can provide domain stabilization and was sufficiently strong to constrain the magnetization in coherent rotation. This can prevent Barkhausen noises associated with magnetization reversal. We report here a proof of concept study of such a domain-biasing scheme, which has its important technological applications in nanoscale spin valve and magnetic tunneling junction read heads and other spintronic devices.

Positive exchange-bias and giant vertical hysteretic shift in La0.3Sr0.7FeO3/SrRuO3 bilayers

PubMed Central

Rana, Rakesh; Pandey, Parul; Singh, R. P.; Rana, D. S.

2014-01-01

The exchange-bias effects in the mosaic epitaxial bilayers of the itinerant ferromagnet (FM) SrRuO3 and the antiferromagnetic (AFM) charge-ordered La0.3Sr0.7FeO3 were investigated. An uncharacteristic low-field positive exchange bias, a cooling-field driven reversal of positive to negative exchange-bias and a layer thickness optimised unusual vertical magnetization shift were all novel facets of exchange bias realized for the first time in magnetic oxides. The successive magnetic training induces a transition from positive to negative exchange bias regime with changes in domain configurations. These observations are well corroborated by the hysteretic loop asymmetries which display the modifications in the AFM spin correlations. These exotic features emphasize the key role of i) mosaic disorder induced subtle interplay of competing AFM-superexchange and FM double exchange at the exchange biased interface and, ii) training induced irrecoverable alterations in the AFM spin structure. PMID:24569516

Adaptively biased sequential importance sampling for rare events in reaction networks with comparison to exact solutions from finite buffer dCME method

PubMed Central

Cao, Youfang; Liang, Jie

2013-01-01

Critical events that occur rarely in biological processes are of great importance, but are challenging to study using Monte Carlo simulation. By introducing biases to reaction selection and reaction rates, weighted stochastic simulation algorithms based on importance sampling allow rare events to be sampled more effectively. However, existing methods do not address the important issue of barrier crossing, which often arises from multistable networks and systems with complex probability landscape. In addition, the proliferation of parameters and the associated computing cost pose significant problems. Here we introduce a general theoretical framework for obtaining optimized biases in sampling individual reactions for estimating probabilities of rare events. We further describe a practical algorithm called adaptively biased sequential importance sampling (ABSIS) method for efficient probability estimation. By adopting a look-ahead strategy and by enumerating short paths from the current state, we estimate the reaction-specific and state-specific forward and backward moving probabilities of the system, which are then used to bias reaction selections. The ABSIS algorithm can automatically detect barrier-crossing regions, and can adjust bias adaptively at different steps of the sampling process, with bias determined by the outcome of exhaustively generated short paths. In addition, there are only two bias parameters to be determined, regardless of the number of the reactions and the complexity of the network. We have applied the ABSIS method to four biochemical networks: the birth-death process, the reversible isomerization, the bistable Schlögl model, and the enzymatic futile cycle model. For comparison, we have also applied the finite buffer discrete chemical master equation (dCME) method recently developed to obtain exact numerical solutions of the underlying discrete chemical master equations of these problems. This allows us to assess sampling results objectively by comparing simulation results with true answers. Overall, ABSIS can accurately and efficiently estimate rare event probabilities for all examples, often with smaller variance than other importance sampling algorithms. The ABSIS method is general and can be applied to study rare events of other stochastic networks with complex probability landscape. PMID:23862966

Adaptively biased sequential importance sampling for rare events in reaction networks with comparison to exact solutions from finite buffer dCME method

NASA Astrophysics Data System (ADS)

Cao, Youfang; Liang, Jie

2013-07-01

Critical events that occur rarely in biological processes are of great importance, but are challenging to study using Monte Carlo simulation. By introducing biases to reaction selection and reaction rates, weighted stochastic simulation algorithms based on importance sampling allow rare events to be sampled more effectively. However, existing methods do not address the important issue of barrier crossing, which often arises from multistable networks and systems with complex probability landscape. In addition, the proliferation of parameters and the associated computing cost pose significant problems. Here we introduce a general theoretical framework for obtaining optimized biases in sampling individual reactions for estimating probabilities of rare events. We further describe a practical algorithm called adaptively biased sequential importance sampling (ABSIS) method for efficient probability estimation. By adopting a look-ahead strategy and by enumerating short paths from the current state, we estimate the reaction-specific and state-specific forward and backward moving probabilities of the system, which are then used to bias reaction selections. The ABSIS algorithm can automatically detect barrier-crossing regions, and can adjust bias adaptively at different steps of the sampling process, with bias determined by the outcome of exhaustively generated short paths. In addition, there are only two bias parameters to be determined, regardless of the number of the reactions and the complexity of the network. We have applied the ABSIS method to four biochemical networks: the birth-death process, the reversible isomerization, the bistable Schlögl model, and the enzymatic futile cycle model. For comparison, we have also applied the finite buffer discrete chemical master equation (dCME) method recently developed to obtain exact numerical solutions of the underlying discrete chemical master equations of these problems. This allows us to assess sampling results objectively by comparing simulation results with true answers. Overall, ABSIS can accurately and efficiently estimate rare event probabilities for all examples, often with smaller variance than other importance sampling algorithms. The ABSIS method is general and can be applied to study rare events of other stochastic networks with complex probability landscape.

Adaptively biased sequential importance sampling for rare events in reaction networks with comparison to exact solutions from finite buffer dCME method.

PubMed

Cao, Youfang; Liang, Jie

2013-07-14

Critical events that occur rarely in biological processes are of great importance, but are challenging to study using Monte Carlo simulation. By introducing biases to reaction selection and reaction rates, weighted stochastic simulation algorithms based on importance sampling allow rare events to be sampled more effectively. However, existing methods do not address the important issue of barrier crossing, which often arises from multistable networks and systems with complex probability landscape. In addition, the proliferation of parameters and the associated computing cost pose significant problems. Here we introduce a general theoretical framework for obtaining optimized biases in sampling individual reactions for estimating probabilities of rare events. We further describe a practical algorithm called adaptively biased sequential importance sampling (ABSIS) method for efficient probability estimation. By adopting a look-ahead strategy and by enumerating short paths from the current state, we estimate the reaction-specific and state-specific forward and backward moving probabilities of the system, which are then used to bias reaction selections. The ABSIS algorithm can automatically detect barrier-crossing regions, and can adjust bias adaptively at different steps of the sampling process, with bias determined by the outcome of exhaustively generated short paths. In addition, there are only two bias parameters to be determined, regardless of the number of the reactions and the complexity of the network. We have applied the ABSIS method to four biochemical networks: the birth-death process, the reversible isomerization, the bistable Schlögl model, and the enzymatic futile cycle model. For comparison, we have also applied the finite buffer discrete chemical master equation (dCME) method recently developed to obtain exact numerical solutions of the underlying discrete chemical master equations of these problems. This allows us to assess sampling results objectively by comparing simulation results with true answers. Overall, ABSIS can accurately and efficiently estimate rare event probabilities for all examples, often with smaller variance than other importance sampling algorithms. The ABSIS method is general and can be applied to study rare events of other stochastic networks with complex probability landscape.

Reversed exchange-bias effect associated with magnetization reversal in the weak ferrimagnet LuF e0.5C r0.5O3

NASA Astrophysics Data System (ADS)

Fita, I.; Markovich, V.; Moskvin, A. S.; Wisniewski, A.; Puzniak, R.; Iwanowski, P.; Martin, C.; Maignan, A.; Carbonio, Raúl E.; Gutowska, M. U.; Szewczyk, A.; Gorodetsky, G.

2018-03-01

The exchange-bias (EB) effect with sign reversal was found in LuF e0.5C r0.5O3 ferrite-chromite, which is a weak ferrimagnet below TN=265 K , exhibiting antiparallel orientation of the ferromagnetic (FM) moments of the Fe and Cr sublattices due to opposite sign of the Fe-Cr Dzyaloshinskii vector, as compared to that of the Fe-Fe and Cr-Cr. The weak FM moments of the studied compound compensate each other at temperature Tcomp=23 0 K , leading to the net magnetic moment reversal and to observed negative magnetization, at moderate applied fields, below Tcomp. Both vertical and horizontal shifts from the origin were gotten in the field-cooled magnetization hysteresis loops. The EB sign was found to be positive below Tcomp and negative above Tcomp, with nonmonotonic dependence on cooling field Hcool. It sharply increases at small values of magnetic fields up to Hcool˜1 kOe , then remains almost unchanged in the range 1-30 kOe and strongly decreases with further increase of Hcool. This unusual behavior results from the competition of various Dzyaloshinskii-Moriya interactions between F e3 + and C r3 + ions.

Gender-related biases in evaluations of sex discrimination allegations: is perceived threat the key?

PubMed

Elkins, Teri J; Phillips, James S; Konopaske, Robert

2002-04-01

Hypotheses derived from defensive attribution theory and social identity theory were tested in 3 laboratory experiments examining the effects of plaintiff and observer gender on perceived threat, plaintiff identification, and sex discrimination. In Study 1, women differentiated plaintiffs on the basis of gender, whereas men did not. Study 2 showed that this bias occurred because employment discrimination was personally threatening to women but not to men. In Study 3, the bias was reversed in a child custody context. As predicted, men found this context to be significantly more threatening than did women and subsequently exhibited a similarity bias. Mediation analyses suggested that responsibility attributions explained most of the variance in discrimination judgments associated with the plaintiff gender by observer gender interactions.

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

Racial bias in pain perception and response: experimental examination of automatic and deliberate processes

PubMed Central

Mathur, Vani A.; Richeson, Jennifer A.; Paice, Judith A.; Muzyka, Michael; Chiao, Joan Y.

2014-01-01

Racial disparities in pain treatment pose a significant public health and scientific problem. Prior studies demonstrate clinicians and non-clinicians are less perceptive, and suggest less treatment for, the pain of African Americans, relative to European Americans. Here we investigate the effects of explicit/implicit patient race presentation, patient race, and perceiver race on pain perception and response. African American and European American participants rated pain perception, empathy, helping motivation, and treatment suggestion in response to vignettes about patients’ pain. Vignettes were accompanied by a rapid (implicit), or static (explicit) presentation of an African or European American patient’s face. Participants perceived and responded more to European American patients in the implicit prime condition, when the effect of patient race was below the level of conscious regulation. This effect was reversed when patient race was presented explicitly. Additionally, female participants perceived and responded more to the pain of all patients, relative to male participants, and in the implicit prime condition, African American participants were more perceptive and responsive than European Americans to the pain of all patients. Taken together, these results suggest that known disparities in pain treatment may be largely due to automatic (below the level of conscious regulation), rather than deliberate (subject to conscious regulation) biases. These biases were not associated with traditional implicit measures of racial attitudes, suggesting that biases in pain perception and response may be independent of general prejudice. Perspective Results suggest racial biases in pain perception and treatment are at least partially due to automatic processes. When the relevance of patient race is made explicit, however, biases are attenuated and even reversed. We also find preliminary evidence that African Americans may be more sensitive to the pain of others than European Americans. PMID:24462976

Ground scratching and preferred leg use in domestic chicks: changes in motor control in the first two weeks post-hatching.

PubMed

Dharmaretnam, Meena; Vijitha, V; Priyadharshini, K; Jashini, T; Vathany, K

2002-10-01

Lateralisation of a variety of visual functions: food discrimination, fear response, copulation, and performance of topographical and other tasks, such as olfactory and auditory functions, have been described in the domestic chick, Gallus gallus domesticus. A bias to left hemisphere control on day 8 and to the right on day 11 has also been demonstrated in the domestic chick. In this study we show that motor control as to foot preference in initiating a scratching bout and a tape-removing task is lateralised in both adults and chicks. There was a preference for the right leg to initiate a bout of ground scratching in both male and female adult birds. Second, foot preference is also affected by the changes in shifts of bias on day 8 and day 11. The right leg preference in initiating a ground scratching bout observed on day 5 is reversed to a left leg preference on day 8. This then reverts to the right leg preference after day 11. Hence it is postulated that the hemisphere that is not activated due to the bias of age controls the first leg to be used in initiating routine movements such as ground scratching. For the tape-removing task the right leg was used to remove a tape adhered to the beak of the chick for the trained group on day 8; but there was no preference in the naive group. Similarly, on day 11 a left foot bias was observed for the trained group and right foot bias for the naive group. To remove a tape the activated hemisphere on days of bias is used; whereas in a novel situation the foot use is reversed. Thus, footedness is affected by age, type of task, and changing hemispheric dominance.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n(+)-p HgCdTe photodiodes

NASA Technical Reports Server (NTRS)

Rosenfeld, David; Bahir, Gad

1992-01-01

A theoretical model for the trap-assisted tunneling process in diffused n-on-p and implanted n(+)-on-p HgCdTe photodiodes is presented. The model describes the traps and the trap characteristics: concentration, energy level, and capture cross sections. We have observed that the above two types of diodes differ in the voltage dependence of the trap-assisted tunneling current and dynamic resistance. Our model takes this difference into account and offers an explanation of the phenomenon. The good fit between measured and calculated DC characteristics of the photodiodes (for medium and high reverse bias and for temperatures from 65 to 140 K) supports the validity of the model.

The effects of gamma irradiation on electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure

NASA Astrophysics Data System (ADS)

Salari, M. Abdolahpour; Güzeldir, B.; Saǧlam, M.

2018-02-01

In this research, we have investigated the electrical characteristics of Zn/ZnO/n-Si/Au-Sb structure before and after 60Co gamma (γ)-ray source irradiation with the total dose range of 0-500 kGy at room temperature. Electrical measurements of this structure have been performed using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Experimental results show that the values of the ideality factor obtained from I-V measurements increased and the values of the barrier height obtained from reverse-bias C-V measurements decreased after gamma-irradiation. The results show that the main effect of the radiation is the generation of laterally inhomogeneous defects near the semiconductor surface.

Disorder induced semiconductor to metal transition and modifications of grain boundaries in nanocrystalline zinc oxide thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Fouran; Kumar, Vinod; Chaudhary, Babloo

2012-10-01

This paper report on the disorder induced semiconductor to metal transition (SMT) and modifications of grain boundaries in nanocrystalline zinc oxide thin film. Disorder is induced using energetic ion irradiation. It eliminates the possibility of impurities induced transition. However, it is revealed that some critical concentration of defects is needed for inducing such kind of SMT at certain critical temperature. Above room temperature, the current-voltage characteristics in reverse bias attributes some interesting phenomenon, such as electric field induced charge transfer, charge trapping, and diffusion of defects. The transition is explained by the defects induced disorder and strain in ZnO crystallitesmore » created by high density of electronic excitations.« less

Properties of p-n-junctions formed by a laser irradiation of a surface of n-Cd1-xZnxTe single crystal

NASA Astrophysics Data System (ADS)

Khomyak, V. V.; Ilashchuk, M. I.; Shtepliuk, I. I.

2015-03-01

Photosensitive barrier structures were fabricated by high-power pulsed laser irradiation of a freshly-cleaved surface of п-type bulk Cd1-xZnxTe substrates. Their electrical properties were investigated and discussed. Dominant carrier mechanisms at a forward and a reverse bias in terms of a recombination and tunnel-recombination model were analyzed. At the illumination reaching 100 mW · cm-2, these surface-barrier р-Cd1-хZnхTe/п-Cd1-хZnхTe structures were possessed by the following photoelectric parameters: open-circuit voltage Voc = 0.61 V, short-circuit current Isc = 0.21 mА and fill factor FF = 0.49, respectively.

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators

PubMed Central

2013-01-01

In this work, we investigated the effects of quantum dot (QD) annealing (as-grown, 600°C-annealed, and 750°C-annealed) on the preliminary performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators (QD-EAMs). Both extinction ratio and insertion loss were found to vary inversely with the annealing temperature. Most importantly, the 3-dB response of the 750°C-annealed lumped-element QD-EAM was found to be 1.6 GHz at zero reverse bias voltage - the lowest reverse bias voltage reported. We believe that this work will be beneficial to researchers working on on-chip integration of QD-EAMs with other devices since energy consumption will be an important consideration. PMID:23388169

NUMERICAL CALCULATIONS ON REVERSED FIELD HEATING IN THE THETATRON

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niblett, G.B.F.; Fisher, D.L.

1962-03-01

Numerical solutions of the two-fluid hydromagnetic equations designed to study the effect of trapped magnetic fields on the properties of a plasma compressed in the theta are discussed. Conditions typical of the AWRE Maggi condenser banks were selected: deuterium at an initial pressure of lOO mu contained in a tube 4 cm in diameter is compressed by a field rising to 100 kilogauss in 2.5 mu sec. Initial bias fields of between +5 and --5 kilogauss were used, and the effects of preheat and rate of compression were assessed. The calculations showed that rapid joule heating is niaintained by themore » large field gradients characteristic of reversed field discharges, and for an initial bias field of --5 kg a peak electron temperature of 1.3 kev was predicted. (auth)« less

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Junseok; Choi, Ji Eun; Hong, Young Joon, E-mail: yjhong@sejong.ac.kr

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunnelingmore » probability determined by wire/film junction geometry and size.« less

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Jeong, Junseok; Choi, Ji Eun; Kim, Yong-Jin; Hwang, Sunyong; Kim, Sung Kyu; Kim, Jong Kyu; Jeong, Hu Young; Hong, Young Joon

2016-09-01

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p-n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE PAGES

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

2017-01-30

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

NASA Astrophysics Data System (ADS)

Teeter, G.; Harvey, S. P.; Johnston, S.

2017-01-01

This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200more » degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.« less

Are object- and space-based attentional biases both important to free-viewing perceptual asymmetries?

PubMed

Nicholls, Michael E R; Hughes, Georgina; Mattingley, Jason B; Bradshaw, John L

2004-02-01

In contrast to unilateral neglect patients, who overattend to the right hemispace, normal participants attend more to the left: a phenomenon known as pseudoneglect. Two experiments examined whether pseudoneglect results from object- or space-based attentional biases. Normal participants ( n=38, 22) made luminance judgments for two left/right mirror-reversed luminance gradients (greyscales task). The relative lateral position of the greyscales stimuli was manipulated so that object- and space-based coordinates were congruent or incongruent. A baseline condition was also included. A leftward bias, found for the baseline condition, was annulled in the incongruent condition, demonstrating an opposition of object- and space-based biases. The leftward bias was reduced in the congruent condition where object- and space-based biases were expected to be additive. This effect was attributed to extraneous factors, which were avoided in the second experiment by presenting the greyscales stimuli sequentially. Once again, no bias was observed in the incongruent condition where object- and space-based biases were opposed. The leftward bias in the congruent condition was the same as the baseline. The results can be explained by a combination of space- and object-based biases or by space-based biases alone and are discussed with reference to a variety of models, which describe the distribution of attention across space.

Monocular Patching May Induce Ipsilateral “Where” Spatial Bias

PubMed Central

Chen, Peii; Erdahl, Lillian; Barrett, Anna M.

2009-01-01

Spatial bias is an asymmetry of perception and/or representation of spatial information —“where” bias —, or of spatially directed actions — “aiming” bias. A monocular patch may induce contralateral “where” spatial bias (the Sprague effect; Sprague (1966) Science, 153, 1544–1547). However, an ipsilateral patch-induced spatial bias may be observed if visual occlusion results in top-down, compensatory re-allocation of spatial perceptual or representational resources toward the region of visual deprivation. Tactile distraction from a monocular patch may also contribute to an ipsilateral bias. To examine these hypotheses, neurologically normal adults bisected horizontal lines at baseline without a patch, while wearing a monocular patch, and while wearing tactile-only and visual-only monocular occlusion. We fractionated “where” and “aiming” spatial bias components using a video apparatus to reverse visual feedback for half of the test trials. The results support monocular patch-induced ipsilateral “where” spatial errors, which are not consistent with the Sprague effect. Further, the present findings suggested that the induced ipsilateral bias may be primarily induced by visual deprivation, consistent with compensatory “where” resource re-allocation. PMID:19100274

Enhancement of Near-Real-Time Cloud Analysis and Related Analytic Support for Whole Sky Imagers

DTIC Science & Technology

2007-05-01

Red/ Blue Ratio Through the Sun on 3 Typical Days ................14 Fig. 11 Red/ Blue Ratio Through the Sun on Forward Bias Days ..........15 Fig...12 Red/ Blue Ratio Through the Sun on Reverse Bias Days ...........15 Fig. 13 No Moon Case in Oklahoma...the clear sky red/ blue ratios. Up until this time, we had been using the background from another site and instrument. As part of this contract, we

Overcoming statistical bias to estimate genetic mating systems in open populations: a comparison of Bateman's principles between the sexes in a sex-role-reversed pipefish.

PubMed

Mobley, Kenyon B; Jones, Adam G

2013-03-01

The genetic mating system is a key component of the sexual selection process, yet methods for the quantification of mating systems remain controversial. One approach involves metrics derived from Bateman's principles, which are based on variances in mating and reproductive success and the relationship between them. However, these measures are extremely difficult to measure for both sexes in open populations, because missing data can result in biased estimates. Here, we develop a novel approach for the estimation of mating system metrics based on Bateman's principles and apply it to a microsatellite-based parentage analysis of a natural population of the dusky pipefish, Syngnathus floridae. Our results show that both male and female dusky pipefish have significantly positive Bateman gradients. However, females exhibit larger values of the opportunity for sexual selection and the opportunity for selection compared to males. These differences translate into a maximum intensity of sexual selection (S'max) for females three times larger than that for males. Overall, this study identifies a critical source of bias that affects studies of mating systems in open populations, presents a novel method for overcoming this bias, and applies this method for the first time in a sex-role-reversed pipefish. © 2012 The Author(s). Evolution© 2012 The Society for the Study of Evolution.

Effects of inhibitory theta burst TMS to different brain sites involved in visuospatial attention - a combined neuronavigated cTBS and behavioural study.

PubMed

Platz, Thomas; Schüttauf, Johannes; Aschenbach, Julia; Mengdehl, Christine; Lotze, Martin

2016-01-01

The study sought to alter visual spatial attention in young healthy subjects by a neuronavigated inhibitory rTMS protocol (cTBS-600) to right brain areas thought to be involved in visual attentional processes, i.e. the temporoparietal junction (TPJ) and the posterior middle frontal gyrus (pMFG), and to test the reversibility of effects by an additional consecutive cTBS to the homologue left brain cortical areas. Healthy subjects showed a leftward bias of the egocentric perspective for both visual-perceptive and visual-exploratory tasks specifically for items presented in the left hemifield. cTBS to the right TPJ, and less systematically to the right pMFG reduced this bias for visuo-spatial and exploratory visuo-motor behaviour. Further, a consecutive cTBS to the left TPJ changed the bias again towards the left for a visual-perceptive task. The evidence supports the notion of an involvement of the right TPJ (and pMFG) in spatial visual attention. The observations further indicate that inhibitory non-invasive brain stimulation (cTBS) to the left TPJ has a potential for reversing a rightward bias of spatial attention when the right TPJ is dysfunctional. Accordingly, the findings could have implications for therapeutic rTMS development for right brain damaged patients with visual neglect.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

A query theory account of the effect of memory retrieval on the sunk cost bias.

PubMed

Ting, Hsuchi; Wallsten, Thomas S

2011-08-01

The sunk cost bias occurs when individuals continue to invest in the same option when better alternatives are available. Many researchers believe that this bias is due to overemphasizing the past investment over the (missed) opportunities offered by alternatives. As an alternative or complement to this view, we show that memory retrieval and attention play important roles in the sunk cost bias. In two experiments, individuals generated more reasons for pursuing the invested option than for an alternative; they generated those reasons earlier in a sequence of reasons; and these effects increased as the individuals made progress toward attaining the reward yielded by the invested option. Associated with these effects, individuals perceived an increasingly wide gap in value between the invested and alternative options as they progressed toward the goal, thereby creating the sunk cost bias. Forcing individuals to reverse the order in which they generated reasons for the invested and alternative options reduced the bias. [corrected

Virtual race transformation reverses racial in-group bias.

PubMed

Hasler, Béatrice S; Spanlang, Bernhard; Slater, Mel

2017-01-01

People generally show greater preference for members of their own racial group compared to racial out-group members. This type of 'in-group bias' is evident in mimicry behaviors. We tend to automatically mimic the behaviors of in-group members, and this behavior is associated with interpersonal sensitivity and empathy. However, mimicry is reduced when interacting with out-group members. Although race is considered an unchangeable trait, it is possible using embodiment in immersive virtual reality to engender the illusion in people of having a body of a different race. Previous research has used this technique to show that after a short period of embodiment of White people in a Black virtual body their implicit racial bias against Black people diminishes. Here we show that this technique powerfully enhances mimicry. We carried out an experiment with 32 White (Caucasian) female participants. Half were embodied in a White virtual body and the remainder in a Black virtual body. Each interacted in two different sessions with a White and a Black virtual character, in counterbalanced order. The results show that dyads with the same virtual body skin color expressed greater mimicry than those of different color. Importantly, this effect occurred depending on the virtual body's race, not participants' actual racial group. When embodied in a Black virtual body, White participants treat Black as their novel in-group and Whites become their novel out-group. This reversed in-group bias effect was obtained regardless of participants' level of implicit racial bias. We discuss the theoretical and practical implications of this surprising psychological phenomenon.

Experimental confirmation of a character-facing bias in literacy development.

PubMed

McIntosh, Robert D; Anderson, Eilidh L; Henderson, Rowena M

2018-06-01

When learning to write, children often mirror-reverse individual letters. For children learning to use the Latin alphabet, in a left-to-right writing culture, letters that appear to face left (such as J and Z) seem to be more prone to reversal than those that appear to face right (such as B and C). It has been proposed that, because most asymmetrical Latin letters face right, children statistically learn this general regularity and are subsequently biased to write any letter rightward. The evidence for this character-facing bias is circumstantial, however, because letter-facing direction is confounded with other factors that could affect error rates; for instance, J and Z are left-facing, but they are also infrequent. We report the first controlled experimental test of the character-facing bias. We taught 43 Scottish primary schoolchildren (aged 4.8-5.8 years) four artificial, letter-like characters, two of which were left-facing and two of which were right-facing. The characters were novel and so were not subject to prior exposure effects, and alternate groups of children were assigned to identical but mirror-reflected character sets. Children were three times more likely to mirror-write a novel character they had learned in a left-facing format than to mirror-write one they had learned in a right-facing format. This provides the first experimental confirmation of the character-facing bias in literacy development and suggests that implicit knowledge acquired from exposure to written language is readily generalized to novel letter-like forms. Copyright © 2018 Elsevier Inc. All rights reserved.

Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Huang, Wei; Dudley, Michael; Fazi, Christian

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vectors greater than or equal to 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = 1c with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. While not nearly as detrimental to SiC device performance as micropipes, it has recently been demonstrated that elementary screw dislocations somewhat degrade the reverse leakage and breakdown properties of 4H-SiC p(+)n diodes. Diodes containing elementary screw dislocations exhibited a 5% to 35% reduction in breakdown voltage, higher pre-breakdown reverse leakage current, softer reverse breakdown I-V knee, and microplasmic breakdown current filaments that were non-catastrophic as measured under high series resistance biasing. This paper details continuing experimental and theoretical investigations into the electrical properties of 4H-SiC elementary screw dislocations. The nonuniform breakdown behavior of 4H-SiC p'n junctions containing elementary screw dislocations exhibits interesting physical parallels with nonuniform breakdown phenomena previously observed in other semiconductor materials. Based upon experimentally observed dislocation-assisted breakdown, a re-assessment of well-known physical models relating power device reliability to junction breakdown has been undertaken for 4H-SiC. The potential impact of these elementary screw dislocation defects on the performance and reliability of various 4H-SiC device technologies being developed for high-power applications will be discussed.

Al0 0.3Ga 0.7N PN diode with breakdown voltage >1600 V

DOE PAGES

Allerman, A. A.; Armstrong, A. M.; Fischer, A. J.; ...

2016-07-21

Demonstration of Al0 0.3Ga 0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm 2 was achieved under DC forward bias and a reverse leakage current <3 nA was measured for voltages <1200 V. The differential on-resistance of 16 mΩ cm 2 is limited by the lateral conductivity of the n-type contact layer requiredmore » by the front-surface contact geometry of the device. An effective critical electric field of 5.9 MV/cm was determined from the epilayer properties and the reverse current–voltage characteristics. To our knowledge, this is the first aluminium gallium nitride (AlGaN)-based PN diode exhibiting a breakdown voltage in excess of 1 kV. Finally, we note that a Baliga figure of merit (V br 2/R spec,on) of 150 MW/cm 2 found is the highest reported for an AlGaN PN diode and illustrates the potential of larger-bandgap AlGaN alloys for high-voltage devices.« less

Temperature dependence of current-voltage characteristics in highly doped Ag/p-GaN/In Schottky diodes

NASA Astrophysics Data System (ADS)

Ćınar, K.; Yıldırım, N.; Coşkun, C.; Turut, A.

2009-10-01

To obtain detailed information about the conduction process of the Ag/p-GaN Schottky diodes (SDs) fabricated by us, we measured the I-V characteristics over the temperature range of 80-360 K by the steps of 20 K. The slope of the linear portion of the forward bias I-V plot and nkT =E0 of the device remained almost unchanged as independent of temperature with an average of 25.71±0.90 V-1 and 41.44±1.38 meV, respectively. Therefore, it can be said that the experimental I-V data quite well obey the field emission model rather than the thermionic emission or thermionic field emission model. The study is a very good experimental example for the FE model. Furthermore, the reverse bias saturation current ranges from 8.34×10-8 A at 80 K to 2.10×10-7 A at 360 K, indicating that the charge transport mechanism in the Ag/p-GaN SD is tunneling due to the weak temperature dependence of the saturation current. The possible origin of high experimental characteristic tunneling energy of E00=39 meV, which is ten times larger than possible theoretical value of 3.89 meV, is attributed to the accumulation of a large amount of defect states near the GaN surface or to the deep level defect band induced by high doping or to any mechanism which enhances the electric field and the state density at the semiconductor surface.

Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

NASA Astrophysics Data System (ADS)

Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

2013-12-01

We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

Fluid simulation of the bias effect in inductive/capacitive discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yu-Ru; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, Wilrijk, BE-2610 Antwerp; Gao, Fei

Computer simulations are performed for an argon inductively coupled plasma (ICP) with a capacitive radio-frequency bias power, to investigate the bias effect on the discharge mode transition and on the plasma characteristics at various ICP currents, bias voltages, and bias frequencies. When the bias frequency is fixed at 13.56 MHz and the ICP current is low, e.g., 6 A, the spatiotemporal averaged plasma density increases monotonically with bias voltage, and the bias effect is already prominent at a bias voltage of 90 V. The maximum of the ionization rate moves toward the bottom electrode, which indicates clearly the discharge mode transition in inductive/capacitivemore » discharges. At higher ICP currents, i.e., 11 and 13 A, the plasma density decreases first and then increases with bias voltage, due to the competing mechanisms between the ion acceleration power dissipation and the capacitive power deposition. At 11 A, the bias effect is still important, but it is noticeable only at higher bias voltages. At 13 A, the ionization rate is characterized by a maximum at the reactor center near the dielectric window at all selected bias voltages, which indicates that the ICP power, instead of the bias power, plays a dominant role under this condition, and no mode transition is observed. Indeed, the ratio of the bias power to the total power is lower than 0.4 over a wide range of bias voltages, i.e., 0–300 V. Besides the effect of ICP current, also the effect of various bias frequencies is investigated. It is found that the modulation of the bias power to the spatiotemporal distributions of the ionization rate at 2 MHz is strikingly different from the behavior observed at higher bias frequencies. Furthermore, the minimum of the plasma density appears at different bias voltages, i.e., 120 V at 2 MHz and 90 V at 27.12 MHz.« less

Bias-field equalizer for bubble memories

NASA Technical Reports Server (NTRS)

Keefe, G. E.

1977-01-01

Magnetoresistive Perm-alloy sensor monitors bias field required to maintain bubble memory. Sensor provides error signal that, in turn, corrects magnitude of bias field. Error signal from sensor can be used to control magnitude of bias field in either auxiliary set of bias-field coils around permanent magnet field, or current in small coils used to remagnetize permanent magnet by infrequent, short, high-current pulse or short sequence of pulses.

Reducing current reversal time in electric motor control

DOEpatents

Bredemann, Michael V

2014-11-04

The time required to reverse current flow in an electric motor is reduced by exploiting inductive current that persists in the motor when power is temporarily removed. Energy associated with this inductive current is used to initiate reverse current flow in the motor.

Breakdown Degradation Associated with Elementary Screw Dislocations in 4H-SiC P(+)N Junction Rectifiers

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Huang, W.; Dudley, M.

1998-01-01

It is well-known that SiC wafer quality deficiencies are delaying the realization of outstandingly superior 4H-SiC power electronics. While efforts to date have centered on eradicating micropipes (i.e., hollow core super-screw dislocations with Burgers vector greater than 2c), 4H-SiC wafers and epilayers also contain elementary screw dislocations (i.e., Burgers vector = lc with no hollow core) in densities on the order of thousands per sq cm, nearly 100-fold micropipe densities. This paper describes an initial study into the impact of elementary screw dislocations on the reverse-bias current-voltage (I-V) characteristics of 4H-SiC p(+)n diodes. First, Synchrotron White Beam X-ray Topography (SWBXT) was employed to map the exact locations of elementary screw dislocations within small-area 4H-SiC p(+)n mesa diodes. Then the high-field reverse leakage and breakdown properties of these diodes were subsequently characterized on a probing station outfitted with a dark box and video camera. Most devices without screw dislocations exhibited excellent characteristics, with no detectable leakage current prior to breakdown, a sharp breakdown I-V knee, and no visible concentration of breakdown current. In contrast devices that contained at least one elementary screw dislocation exhibited a 5% to 35% reduction in breakdown voltage, a softer breakdown I-V knee, and visible microplasmas in which highly localized breakdown current was concentrated. The locations of observed breakdown microplasmas corresponded exactly to the locations of elementary screw dislocations identified by SWBXT mapping. While not as detrimental to SiC device performance as micropipes, the undesirable breakdown characteristics of elementary screw dislocations could nevertheless adversely affect the performance and reliability of 4H-SiC power devices.

hebp3, a novel member of the heme-binding protein gene family, is expressed in the medaka meninges with higher abundance in females due to a direct stimulating action of ovarian estrogens.

PubMed

Nakasone, Kiyoshi; Nagahama, Yoshitaka; Okubo, Kataaki

2013-02-01

The brains of teleost fish exhibit remarkable sexual plasticity throughout their life span. To dissect the molecular basis for the development and reversal of sex differences in the teleost brain, we screened for genes differentially expressed between sexes in the brain of medaka (Oryzias latipes). One of the genes identified in the screen as being preferentially expressed in females was found to be a new member of the heme-binding protein gene family that includes hebp1 and hebp2 and was designated here as hebp3. The medaka hebp3 is expressed in the meninges with higher abundance in females, whereas there is no expression within the brain parenchyma. This female-biased expression of hebp3 is not attributable to the direct action of sex chromosome genes but results from the transient and reversible action of estrogens derived from the ovary. Moreover, estrogens directly activate the transcription of hebp3 via a palindromic estrogen-responsive element in the hebp3 promoter. Taken together, our findings demonstrate that hebp3 is a novel transcriptional target of estrogens, with female-biased expression in the meninges. The definite but reversible sexual dimorphism of the meningeal hebp3 expression may contribute to the development and reversal of sex differences in the teleost brain.

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films.

PubMed

Ge, Chen; Jin, Kui-Juan; Zhang, Qing-Hua; Du, Jian-Yu; Gu, Lin; Guo, Hai-Zhong; Yang, Jing-Ting; Gu, Jun-Xing; He, Meng; Xing, Jie; Wang, Can; Lu, Hui-Bin; Yang, Guo-Zhen

2016-12-21

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO 3 and paraelectric SrTiO 3 films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO 3 . The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.

Particle sensor array

NASA Technical Reports Server (NTRS)

Buehler, Martin G. (Inventor); Blaes, Brent R. (Inventor); Lieneweg, Udo (Inventor)

1994-01-01

A particle sensor array which in a preferred embodiment comprises a static random access memory having a plurality of ion-sensitive memory cells, each such cell comprising at least one pull-down field effect transistor having a sensitive drain surface area (such as by bloating) and at least one pull-up field effect transistor having a source connected to an offset voltage. The sensitive drain surface area and the offset voltage are selected for memory cell upset by incident ions such as alpha-particles. The static random access memory of the present invention provides a means for selectively biasing the memory cells into the same state in which each of the sensitive drain surface areas is reverse biased and then selectively reducing the reversed bias on these sensitive drain surface areas for increasing the upset sensitivity of the cells to ions. The resulting selectively sensitive memory cells can be used in a number of applications. By way of example, the present invention can be used for measuring the linear energy transfer of ion particles, as well as a device for assessing the resistance of CMOS latches to Cosmic Ray induced single event upsets. The sensor of the present invention can also be used to determine the uniformity of an ion beam.

Salience driven value integration explains decision biases and preference reversal

PubMed Central

Tsetsos, Konstantinos; Chater, Nick; Usher, Marius

2012-01-01

Human choice behavior exhibits many paradoxical and challenging patterns. Traditional explanations focus on how values are represented, but little is known about how values are integrated. Here we outline a psychophysical task for value integration that can be used as a window on high-level, multiattribute decisions. Participants choose between alternative rapidly presented streams of numerical values. By controlling the temporal distribution of the values, we demonstrate that this process underlies many puzzling choice paradoxes, such as temporal, risk, and framing biases, as well as preference reversals. These phenomena can be explained by a simple mechanism based on the integration of values, weighted by their salience. The salience of a sampled value depends on its temporal order and momentary rank in the decision context, whereas the direction of the weighting is determined by the task framing. We show that many known choice anomalies may arise from the microstructure of the value integration process. PMID:22635271

Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liang, Renli; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhao, Chong; Zhang, Wei; Dai, Jiangnan; Chen, Changqing

2017-07-01

We demonstrate the fabrication and characterization of ZnO/GaN-based heterojunction light-emitting diodes (LEDs) by using air-stable and solution-processable ZnO quantum dots (QDs) with a thin MgO interlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/ p-GaN heterojunction can only display electroluminescence (EL) characteristic in reverse bias regime. Under sufficient reverse bias, a fairly pure ultraviolet EL emission located at 370 nm deriving from near band edge of ZnO with a full width at half maximum (FWHM) of 8.3 nm had been obtained, while the deep-level emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively in terms of photoluminescence (PL) results and energy band diagram.[Figure not available: see fulltext.

Silicon trench photodiodes on a wafer for efficient X-ray-to-current signal conversion using side-X-ray-irradiation mode

NASA Astrophysics Data System (ADS)

Ariyoshi, Tetsuya; Takane, Yuta; Iwasa, Jumpei; Sakamoto, Kenji; Baba, Akiyoshi; Arima, Yutaka

2018-04-01

In this paper, we report a direct-conversion-type X-ray sensor composed of trench-structured silicon photodiodes, which achieves a high X-ray-to-current conversion efficiency under side X-ray irradiation. The silicon X-ray sensor with a length of 22.6 mm and a trench depth of 300 µm was fabricated using a single-poly single-metal 0.35 µm process. X-rays with a tube voltage of 80 kV were irradiated along the trench photodiode from the side of the test chip. The theoretical limit of X-ray-to-current conversion efficiency of 83.8% was achieved at a low reverse bias voltage of 25 V. The X-ray-to-electrical signal conversion efficiency of conventional indirect-conversion-type X-ray sensors is about 10%. Therefore, the developed sensor has a conversion efficiency that is about eight times higher than that of conventional sensors. It is expected that the developed X-ray sensor will be able to markedly lower the radiation dose required for X-ray diagnoses.

High speed photodiodes in standard nanometer scale CMOS technology: a comparative study.

PubMed

Nakhkoob, Behrooz; Ray, Sagar; Hella, Mona M

2012-05-07

This paper compares various techniques for improving the frequency response of silicon photodiodes fabricated in mainstream CMOS technology for fully integrated optical receivers. The three presented photodiodes, Spatially Modulated Light detectors, Double, and Interrupted P-Finger photodiodes, aim at reducing the low speed diffusive component of the photo generated current. For the first photodiode, Spatially Modulated Light (SML) detectors, the low speed current component is canceled out by converting it to a common mode current driving a differential transimpedance amplifier. The Double Photodiode (DP) uses two depletion regions to increase the fast drift component, while the Interrupted-P Finger Photodiode (IPFPD) redirects the low speed component towards a different contact from the main fast terminal of the photodiode. Extensive device simulations using 130 nm CMOS technology-parameters are presented to compare their performance using the same technological platform. Finally a new type of photodiode that uses triple well CMOS technology is introduced that can achieve a bandwidth of roughly 10 GHz without any process modification or high reverse bias voltages that would jeopardize the photodetector and subsequent transimpedance amplifier reliability.

Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing

DTIC Science & Technology

2002-01-01

QWIP )[1]. Unfortunately, fast Auger recombination rate in such interband detectors[2] and high thermal generation rate in the Electronic mail: razcghi...detectors operating at different cutoff wavelength[5]. The major noise component at zero bias is the Johnson noise , and hence the detectivity of the...which leads to a Johnson noise limited detectivity of about 3.71xl0..cm’HzŖ /W. Under reverse bias, the I/f noise will show up. However with

Global trends in use of long-acting reversible and permanent methods of contraception: Seeking a balance.

PubMed

Joshi, Ritu; Khadilkar, Suvarna; Patel, Madhuri

2015-10-01

The global trend shows that the use of permanent contraception to prevent unintended pregnancy is high. Although the trend also shows a rise in the use of long-acting reversible methods, these are still underutilized despite having contraceptive as well as non-contraceptive benefits. Lack of knowledge among women, dependence on the provider for information, and provider bias for permanent contraception are cited as reasons for this reduced uptake. Training of healthcare providers and increased patient awareness about the effectiveness of long-acting reversible contraceptive methods will increase their uptake and help prevent unintended pregnancies. Copyright © 2015. Published by Elsevier Ireland Ltd.

Perceptual-Attentional and Motor-Intentional Bias in Near and Far Space

PubMed Central

Garza, John P.; Eslinger, Paul J.; Barrett, Anna M.

2008-01-01

Spatial bias demonstrated in tasks such as line-bisection may stem from perceptual-attentional (PA) “where” and motor-intentional (MI) “aiming” influences. We tested normal participants’ line bisection performance in the presence of an asymmetric visual distracter with a video apparatus designed to dissociate PA from MI bias. An experimenter stood as a distractor to the left or right of a video monitor positioned in either near or far space, where participants viewed lines and a laser point they directed under 1) natural and 2) mirror-reversed conditions. Each trial started with the pointer positioned at either the top left or top right corner of the screen, and alternated thereafter. Data analysis indicated that participants made primarily PA leftward errors in near space, but not in far space. Furthermore, PA, but not MI, bias increased bilaterally in the direction of distraction. In contrast, MI, but not PA, bias was shifted bilaterally in the direction of startside. Results support the conclusion that a primarily PA left sided bias in near space is consistent with right hemisphere spatial attentional dominance. A bottom-up visual distractor specifically affected PA “where” spatial bias while top-down motor cuing influenced MI “aiming” bias. PMID:18381226

Variations in the serotonin-transporter gene are associated with attention bias patterns to positive and negative emotion faces.

PubMed

Pérez-Edgar, Koraly; Bar-Haim, Yair; McDermott, Jennifer Martin; Gorodetsky, Elena; Hodgkinson, Colin A; Goldman, David; Ernst, Monique; Pine, Daniel S; Fox, Nathan A

2010-03-01

Both attention biases to threat and a serotonin-transporter gene polymorphism (5-HTTLPR) have been linked to heightened neural activation to threat and the emergence of anxiety. The short allele of 5-HTTLPR may act via its effect on neurotransmitter availability, while attention biases shape broad patterns of cognitive processing. We examined individual differences in attention bias to emotion faces as a function of 5-HTTLPR genotype. Adolescents (N=117) were classified for presumed SLC6A4 expression based on 5-HTTLPR-low (SS, SL(G), or L(G)L(G)), intermediate (SL(A) or L(A)L(G)), or high (L(A)L(A)). Participants completed the dot-probe task, measuring attention biases toward or away from angry and happy faces. Biases for angry faces increased with the genotype-predicted neurotransmission levels (low>intermediate>high). The reverse pattern was evident for happy faces. The data indicate a linear relation between 5-HTTLPR allelic status and attention biases to emotion, demonstrating a genetic mechanism for biased attention using ecologically valid stimuli that target socioemotional adaptation. Copyright 2009 Elsevier B.V. All rights reserved.

Analysis of asymmetric property with DC bias current on thin-film magnetoimpedance element

NASA Astrophysics Data System (ADS)

Kikuchi, Hiroaki; Sumida, Chihiro

2018-05-01

We theoretically analyzed the magnetoimpedance profile of a thin-film element with a DC bias current using the bias susceptibility theory and Maxwell's equations. Although the analysis model predicts that an element with a rectangular cross section shows symmetric impedance property with respect to the Z-axis with DC bias current, the experimental results showed asymmetric properties. Taking the shape imbalance and trapezoidal cross section of the element into account, we explained the asymmetric impedance properties qualitatively.

Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.

PubMed

Fisichella, Gabriele; Greco, Giuseppe; Roccaforte, Fabrizio; Giannazzo, Filippo

2014-08-07

Vertical heterostructures combining two or more graphene (Gr) layers separated by ultra-thin insulating or semiconductor barriers represent very promising systems for next generation electronics devices, due to the combination of high speed operation with wide-range current modulation by a gate bias. They are based on the specific mechanisms of current transport between two-dimensional-electron-gases (2DEGs) in close proximity. In this context, vertical devices formed by Gr and semiconductor heterostructures hosting an "ordinary" 2DEG can be also very interesting. In this work, we investigated the vertical current transport in Gr/Al(0.25)Ga(0.75)N/GaN heterostructures, where Gr is separated from a high density 2DEG by a ∼ 24 nm thick AlGaN barrier layer. The current transport from Gr to the buried 2DEG was characterized at nanoscale using conductive atomic force microscopy (CAFM) and scanning capacitance microscopy (SCM). From these analyses, performed both on Gr/AlGaN/GaN and on AlGaN/GaN reference samples using AFM tips with different metal coatings, the Gr/AlGaN Schottky barrier height ΦB and its lateral uniformity were evaluated, as well as the variation of the carrier densities of graphene (ngr) and AlGaN/GaN 2DEG (ns) as a function of the applied bias. A low Schottky barrier (∼ 0.40 eV) with excellent spatial uniformity was found at the Gr/AlGaN interface, i.e., lower compared to the measured values for metal/AlGaN contacts, which range from ∼ 0.6 to ∼ 1.1 eV depending on the metal workfunction. The electrical behavior of the Gr/AlGaN contact has been explained by Gr interaction with AlGaN donor-like surface states located in close proximity, which are also responsible of high n-type Gr doping (∼ 1.3 × 10(13) cm(-2)). An effective modulation of ns by the Gr Schottky contact was demonstrated by capacitance analysis under reverse bias. From this basic understanding of transport properties in Gr/AlGaN/GaN heterostructures, novel vertical field effect transistor concepts with high operating speed and I(on)/I(off) ratio can be envisaged.

Evaluation of a HgCdTe e-APD based detector for 2  μm CO2 DIAL application.

PubMed

Dumas, Arnaud; Rothman, Johan; Gibert, Fabien; Édouart, Dimitri; Lasfargues, Gilles; Cénac, Claire; Mounier, Florian Le; Pellegrino, Jessica; Zanatta, Jean-Paul; Bardoux, Alain; Tinto, Francesc; Flamant, Pierre

2017-09-20

Benefiting from close to ideal amplification properties (high gain, low dark current, and low excess noise factor), HgCdTe electron initiated avalanche photodiode (e-APD) technology exhibits state of the art sensitivity, thus being especially relevant for applications relying on low light level detection, such as LIDAR (Light Detection And Ranging). In addition, the tunable gap of the Hg 1-x Cd x Te alloy enables coverage of the short wavelength infrared (SWIR) and especially the 2 μm spectral range. For these two reasons, a HgCdTe e-APD based detector is a promising candidate for future differential absorption LIDAR missions targeting greenhouse gas absorption bands in SWIR. In this study, we report on the design and evaluation of such a HgCdTe e-APD based detector. The first part focuses on detector architecture and performance. Key figures of merit are: 2.8 μm cutoff wavelength, 200 μm diameter almost circular sensitive area, 185 K operating temperature (thermo-electric cooling), 22 APD gain (at 12 V reverse bias), 360  kΩ transimpedance gain, and 60  fWHz -0.5 noise equivalent power (at 12 V reverse bias). The second part presents an analysis of atmospheric LIDAR signals obtained by mounting the HgCdTe e-APD based detector on the 2 μm differential absorption LIDAR developed at the Laboratoire de Météorologie Dynamique and dedicated to CO 2 monitoring. Discussion emphasizes random and systematic errors in LIDAR measurements regarding breadboard detector characterization. In particular, we investigate the influence of parasitic tails in detector impulse response on short range DIAL measurements.

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

NASA Astrophysics Data System (ADS)

Lee, Kai-Hsuan; Chang, Ping-Chuan; Chen, Tse-Pu; Chang, Sheng-Po; Shiu, Hung-Wei; Chang, Lo-Yueh; Chen, Chia-Hao; Chang, Shoou-Jinn

2013-02-01

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Chiral Maxwell demon in a quantum Hall system with a localized impurity

NASA Astrophysics Data System (ADS)

Rosselló, Guillem; López, Rosa; Platero, Gloria

2017-08-01

We investigate the role of chirality on the performance of a Maxwell demon implemented in a quantum Hall bar with a localized impurity. Within a stochastic thermodynamics description, we investigate the ability of such a demon to drive a current against a bias. We show that the ability of the demon to perform is directly related to its ability to extract information from the system. The key features of the proposed Maxwell demon are the topological properties of the quantum Hall system. The asymmetry of the electronic interactions felt at the localized state when the magnetic field is reversed joined to the fact that we consider energy-dependent (and asymmetric) tunneling barriers that connect such state with the Hall edge modes allow the demon to properly work.

Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions

NASA Astrophysics Data System (ADS)

Solovan, M. M.; Gavaleshko, N. M.; Brus, V. V.; Mostovyi, A. I.; Maryanchuk, P. D.; Tresso, E.

2016-10-01

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ˜ 106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kai-Hsuan; Chen, Chia-Hao; Chang, Ping-Chuan

2013-02-18

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Intensity position modulation for free-space laser communication system

NASA Astrophysics Data System (ADS)

Jangjoo, Alireza; Faghihi, F.

2004-12-01

In this research a novel modulation technique for free-space laser communication system called Intensity Position Modulation (IPM) is carried out. According to TEM00 mode of a laser beam and by linear fitting on the Gaussian function as an approximation, the variation of linear part on the reverse biased pn photodiode produced alternating currents which contain the information. Here, no characteristic property of the beam as intensity or frequency is changed and only the beam position moves laterally. We demonstrated that in this method no bandwidth is required, so it is possible to reduce the background radiation noise by narrowband filtering of the carrier. The fidelity of the analog voice communication system which is made upon the IPM is satisfactory and we are able to transmit the audio signals up to 1Km.

Out of sight, out of mind: threats to the marine biodiversity of the Canary Islands (NE Atlantic Ocean).

PubMed

Riera, Rodrigo; Becerro, Mikel A; Stuart-Smith, Rick D; Delgado, Juan D; Edgar, Graham J

2014-09-15

Lack of knowledge of the marine realm may bias our perception of the current status and threats to marine biodiversity. Less than 10% of all ecological literature is related to the ocean, and the information we have on marine species that are threatened or on the verge of extinction is scarce. This lack of information is particularly critical for isolated areas such as oceanic archipelagos. Here we review published and grey literature on the current status of marine organisms in the Canary Islands as a case description of the consequences that current out-of-sight out-of-mind attitudes may have on this unique environment. Global change, as represented by coastal development, pollution, exotic species and climate change, are currently affecting the distribution and abundance of Canarian marine organisms, and pose multiple threats to local species and communities. Environmental risks are significant at community and species levels, particularly for threatened species. Failure to address these trends will result in shifts in local biodiversity with important ecological, social, and economic consequences. Scientists, policy makers, educators, and relevant societal groups need to collaborate to reverse deleterious coastal biodiversity trends. Copyright © 2014 Elsevier Ltd. All rights reserved.

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

PubMed

Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

2016-10-12

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Guest concentration, bias current, and temperature-dependent sign inversion of magneto-electroluminescence in thermally activated delayed fluorescence devices

NASA Astrophysics Data System (ADS)

Deng, Junquan; Jia, Weiyao; Chen, Yingbing; Liu, Dongyu; Hu, Yeqian; Xiong, Zuhong

2017-03-01

Non-emissive triplet excited states in devices that undergo thermally activated delayed fluorescence (TADF) can be up-converted to singlet excited states via reverse intersystem crossing (RISC), which leads to an enhanced electroluminescence efficiency. Exciton-based fluorescence devices always exhibit a positive magneto-electroluminescence (MEL) because intersystem crossing (ISC) can be suppressed effectively by an external magnetic field. Conversely, TADF devices should exhibit a negative MEL because RISC is suppressed by the external magnetic field. Intriguingly, we observed a positive MEL in TADF devices. Moreover, the sign of the MEL was either positive or negative, and depended on experimental conditions, including doping concentration, current density and temperature. The MEL observed from our TADF devices demonstrated that ISC in the host material and RISC in the guest material coexisted. These competing processes were affected by the experimental conditions, which led to the sign change of the MEL. This work gives important insight into the energy transfer processes and the evolution of excited states in TADF devices.

Hot-spot qualification testing of concentrator modules

NASA Technical Reports Server (NTRS)

Gonzalez, C. C.; Sugimura, R. S.; Ross, R. G., Jr.

1987-01-01

Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current, forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator-module hot-spot qualification test is the test developed for flat-plate modules, issues such as providing cell illumination introduce additional complexities into the testing procedure. The results indicate that the same general guidelines apply to protecting concentrator modules from hot-spot stressing as apply to flat-plate modules, and recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. A method for determining the cell temperature in the laboratory or in the field is discussed.

Self-Heating Effects In Polysilicon Source Gated Transistors

PubMed Central

Sporea, R. A.; Burridge, T.; Silva, S. R. P.

2015-01-01

Source-gated transistors (SGTs) are thin-film devices which rely on a potential barrier at the source to achieve high gain, tolerance to fabrication variability, and low series voltage drop, relevant to a multitude of energy-efficient, large-area, cost effective applications. The current through the reverse-biased source barrier has a potentially high positive temperature coefficient, which may lead to undesirable thermal runaway effects and even device failure through self-heating. Using numerical simulations we show that, even in highly thermally-confined scenarios and at high current levels, self-heating is insufficient to compromise device integrity. Performance is minimally affected through a modest increase in output conductance, which may limit the maximum attainable gain. Measurements on polysilicon devices confirm the simulated results, with even smaller penalties in performance, largely due to improved heat dissipation through metal contacts. We conclude that SGTs can be reliably used for high gain, power efficient analog and digital circuits without significant performance impact due to self-heating. This further demonstrates the robustness of SGTs. PMID:26351099

Influence of a NiO intermediate layer on the properties of ZnO grown on Si by chemical bath deposition

NASA Astrophysics Data System (ADS)

Djiokap, S. R. Tankio; Urgessa, Z. N.; Mbulanga, C. M.; Boumenou, C. Kameni; Venter, A.; Botha, J. R.

2018-04-01

In this paper, the growth of ZnO nanorods on bare and NiO-coated p-Si substrates is reported. A two-step chemical bath deposition process has been used to grow the nanorods. X-ray diffraction and scanning probe microscopy confirmed that the NiO films were polycrystalline, and that the average grain size correlated with the NiO layer thickness. The ZnO nanorod morphology, orientation and optical properties seemed to be unaffected by the intermediate NiO layer thickness. Current-voltage measurements confirmed the rectifying behavior of all the ZnO/NiO/Si heterostructures. The inclusion of a NiO layer between the substrate and the ZnO nanorods are shown to cause a reduction in both the forward and reverse bias currents. This is in qualitative agreement with the band diagram of these heterostructures, which suggests that the intermediate NiO layer should act as an electron blocking layer.

Large-eddy simulation, atmospheric measurement and inverse modeling of greenhouse gas emissions at local spatial scales

NASA Astrophysics Data System (ADS)

Nottrott, Anders Andelman

Multiferroic materials and devices have attracted intensified interests due to the demonstrated strong magnetoelectric coupling in new multiferroic materials, artificial multiferroic heterostructures and devices with unique functionalities and superior performance characteristics. This offers great opportunities for achieving compact, fast, energy-efficient and voltage tunable spintronic devices. In traditional magnetic materials based magnetic random access memories (MRAM) devices, the binary information is stored as magnetization. The high coercivity of the ferromagnetic media requires large magnetic fields for switching the magnetic states thus consuming large amount of energy. In modern MRAM information writing process, spin-torque technique is utilized for minimizing the large energy for generating magnetic field by passing through a spin-polarized current directly to the magnets. However, both methods still need large current/current density to toggle the magnetic bits which consume large amount of energy. With the presence of multiferroic or magnetoelectric materials, spin is controlled by electric field which opens new opportunities for power-efficient voltage control of magnetization in spintronic devices leading to magnetoelectric random access memories (MERAM) with ultra-low energy consumption. However, state of the art multiferroic materials still have difficulty of realizing nonvolatile 180° magnetization reversal, which is desired in realizing MERAM. In a strain-mediated multiferroic system, the typical modification of the magnetism of ferromagnetic phase as a function of bipolar electric field shows a "butterfly" like behavior. This is due to the linear piezoelectricity of ferroelectric phase which has a "butterfly" like piezostrain as a function of electric field curve resulting from ferroelectric domain wall switching. In this case, the magnetization state is volatile because of the vanishing of the piezostrain at zero electric field. However, the non-volatile switching of magnetization would be more promising for information storage or MERAM devices with lower energy consumption and the magnetic state can be further controlled by voltage impulse. In this work, we first study the equivalent of direct and converse magnetoelectric effects. The resonant direct and converse magnetoelectric (ME) effects have been investigated experimentally and theoretically in FeGa/PZT/FeGa sandwich laminate composites. The frequency responses of direct and converse magnetoelectric effects were measured under the same electric and magnetic bias conditions. The resonant direct ME effect (DME) occurs at an antiresonance frequency, while resonant converse ME effect (CME) occurs at a resonance frequency. The antiresonance and resonance frequencies have close but different values under identical bias conditions. The magnitudes of resonant effective ME coefficients for direct and converse ME effects are also not equal. Based on different sets of constitutive equations of the materials for DME and CME, a new model was developed to describe the frequency response of DME and CME in laminate composite, which was in good agreement with the experimental results. Inequivalence of resonant ME effects is ascribed to the different mechanical and electrical boundary conditions for DME and CME. On the other hand, similar bias E and H field dependence was observed for both DME and CME resonance frequencies and resonant coefficients, indicating consistency between DME and CME effects. In the study of the frequency response of DME and CME, the linear piezoelectric effect is used. However, this linear piezoelectric effect in converse magnetoelectric coupling would lead to "butter-fly" like magnetization vs. electric field curve which leads to a "volatile" behavior in magnetic memory system. In the presented study, a unique ferroelastic switching pathway in ferroelectric substrates is utilized to produce two distinct, reversible and stable lattice strain states which leads to the establish of two stable magnetization states of the ferromagnetic thin film. In this process, instead of complete 180° ferromagnetic domain switching, 71°/109° ferroelastic domain wall switching is involved, where the electric polarization is switching between in-plane and out-of-plane direction. A voltage impulse induced reversible bistable magnetization switching in FeGaB/lead zirconate titanate (PZT) multiferroic heterostructures at room temperature is first demonstrated. Two reversible and stable voltage-impulse induced mechanical strain states were obtained in the PZT by applying an electric field impulse with its amplitude smaller than the electric coercive field, which led to reversible voltage impulse induced bistable magnetization switching. Direct and converse magnetoelectric effects are carefully quantified.

Exchange bias effect and glassy-like behavior of EuCrO{sub 3} and CeCrO{sub 3} nano-powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taheri, M., E-mail: maryam.taheri@brocku.ca; Razavi, F. S.; Kremer, R. K.

2015-09-28

The magnetic properties of nano-sized EuCrO{sub 3} and CeCrO{sub 3} powders, synthesized by a solution combustion method, were investigated using DC/AC magnetization measurements. An exchange bias effect, magnetization irreversibility and AC susceptibility dispersion in these samples provided evidence for the presence of the spin disorder magnetic phase. The exchange bias phenomenon, which is assigned to the exchange coupling between the glassy-like shell and canted antiferromagnetic core, showed the opposite sign in EuCrO{sub 3} and CeCrO{sub 3} at low temperatures, suggesting different exchange interactions at the interfaces in these compounds. We also observed a sign reversal of exchange bias in CeCrO{submore » 3} at different temperatures.« less

Anthropomorphic bias found in typically developing children is not found in children with autistic spectrum disorder.

PubMed

Chaminade, Thierry; Rosset, Delphine; Da Fonseca, David; Hodgins, Jessica K; Deruelle, Christine

2015-02-01

The anthropomorphic bias describes the finding that the perceived naturalness of a biological motion decreases as the human-likeness of a computer-animated agent increases. To investigate the anthropomorphic bias in autistic children, human or cartoon characters were presented with biological and artificial motions side by side on a touchscreen. Children were required to touch one that would grow while the other would disappear, implicitly rewarding their choice. Only typically developing controls depicted the expected preference for biological motion when rendered with human, but not cartoon, characters. Despite performing the task to report a preference, children with autism depicted neither normal nor reversed anthropomorphic bias, suggesting that they are not sensitive to the congruence of form and motion information when observing computer-animated agents' actions. © The Author(s) 2014.

Electro-refractive photonic device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zortman, William A.; Watts, Michael R.

2015-06-09

The various technologies presented herein relate to phase shifting light to facilitate any of light switching, modulation, amplification, etc. Structures are presented where a second layer is juxtaposed between a first layer and a third layer with respective doping facilitating formation of p-n junctions at the interface between the first layer and the second layer, and between the second layer and the third layer. Application of a bias causes a carrier concentration change to occur at the p-n junctions which causes a shift in the effective refractive index per incremental change in an applied bias voltage. The effective refractive indexmore » enhancement can occur in both reverse bias and forward bias. The structure can be incorporated into a waveguide, an optical resonator, a vertical junction device, a horizontal junction device, a Mach-Zehnder interferometer, a tuneable optical filter, etc.« less

Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)-8-hydroxy-5-nitrosoquinolate nano-sized thin films: characterization and factors optimization.

PubMed

Haggag, Sawsan M S; Farag, A A M; Abdel Refea, M

2013-02-01

Nano Al(III)-8-hydroxy-5-nitrosoquinolate [Al(III)-(HNOQ)(3)] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27-71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current-voltage (I-V) characteristics of [Al(III)-(HNOQ)(3)]/p-Si heterojunction was measured at room temperature. The forward and reverse I-V characteristics were analyzed. The calculated zero-bias barrier height (Φ(b)) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (N(ss)) was obtained. Copyright © 2012 Elsevier B.V. All rights reserved.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors.

PubMed

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I; Monroy, Eva

2018-06-22

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

PubMed

Chizh, Kirill V; Chapnin, Valery A; Kalinushkin, Victor P; Resnik, Vladimir Y; Storozhevykh, Mikhail S; Yuryev, Vladimir A

2013-04-17

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

NASA Technical Reports Server (NTRS)

Joshi, R. P.

2001-01-01

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Magnetization reversal in exchange biased Co/CoO probed with anisotropic magnetoresistance

NASA Astrophysics Data System (ADS)

Gredig, Thomas; Krivorotov, Ilya N.; Dahlberg, E. Dan

2002-05-01

The magnetization reversal in exchange coupled polycrystalline Co/CoO bilayers has been investigated as a function of CoO thickness using anisotropic magnetoresistance as a probe. The anisotropic magnetoresistance (AMR) was measured during the magnetization reversal and it was used to determine the orientation of the magnetization. For thin CoO layers large training effects were present; ergo the first hysteresis loop after field cooling was not the same as the second. The magnitude of the observed training was found to decrease with increasing CoO thickness. In the samples where substantial training was observed, the first magnetization reversal was dominated by nucleation of reversed domains. For the reversal from the antiparallel state back to the parallel direction, the AMR is consistent with a rotation process. In thicker CoO films where the training was less, the asymmetry was drastically reduced. A simple model that couples the antiferromagnetic grains to the ferromagnetic layer simulates qualitatively the observed magnetoresistance.

High efficiency FET microwave detector design

NASA Astrophysics Data System (ADS)

Luglio, Juan; Ishii, Thomas Koryu

1990-12-01

The work is based on an assumption that very little microwave power would be consumed at a negatively biased gate of a microwave FET, yet significant detected signals would be obtained at the drain if the bias is given. By analyzing a Taylor-series expansion of the drain-current equation in the vicinity of a fixed gate-bias voltage, the bias voltage is found to maximize the second derivative of the drain current, the gate-bias voltage characteristic curve for the maximum detected drain current under a given fixed drain-bias voltage. Based on these findings, a high-efficiency microwave detector is designed, fabricated, and tested at 8.6 GHz, and it is shown that the audio power over absorbed microwave power ratio of the detector is 135 percent due to the positive gain.

Force analysis of magnetic bearings with power-saving controls

NASA Technical Reports Server (NTRS)

Johnson, Dexter; Brown, Gerald V.; Inman, Daniel J.

1992-01-01

Most magnetic bearing control schemes use a bias current with a superimposed control current to linearize the relationship between the control current and the force it delivers. For most operating conditions, the existence of the bias current requires more power than alternative methods that do not use conventional bias. Two such methods are examined which diminish or eliminate bias current. In the typical bias control scheme it is found that for a harmonic control force command into a voltage limited transconductance amplifier, the desired force output is obtained only up to certain combinations of force amplitude and frequency. Above these values, the force amplitude is reduced and a phase lag occurs. The power saving alternative control schemes typically exhibit such deficiencies at even lower command frequencies and amplitudes. To assess the severity of these effects, a time history analysis of the force output is performed for the bias method and the alternative methods. Results of the analysis show that the alternative approaches may be viable. The various control methods examined were mathematically modeled using nondimensionalized variables to facilitate comparison of the various methods.

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

PubMed Central

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X.; Liu, Ming

2015-01-01

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies. PMID:26576658

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Xu; Zhou, Ziyao; Peng, Bin

2015-11-18

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shiftedmore » by up to |ΔH ex|/H ex=8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔH ex|/H c=67.5~125% in NiFe/FeMn/glass/PZN-PT and 30~38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Lastly, electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.« less

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

NASA Astrophysics Data System (ADS)

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X.; Liu, Ming

2015-11-01

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |ΔHex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |ΔHex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates.

PubMed

Xue, Xu; Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Zhang, Yijun; Ren, Wei; Ren, Tao; Yang, Xi; Nan, Tianxiang; Sun, Nian X; Liu, Ming

2015-11-18

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.

A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halim, Mohammad Abdul, E-mail: halimtsukuba2012@gmail.com; Islam, Muhammad Monirul; Luo, Xianjia

A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decaymore » time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.« less

Reverse Current in Solar Flares

NASA Technical Reports Server (NTRS)

Knight, J. W., III

1978-01-01

An idealized steady state model of a stream of energetic electrons neutralized by a reverse current in the pre-flare solar plasma was developed. These calculations indicate that, in some cases, a significant fraction of the beam energy may be dissipated by the reverse current. Joule heating by the reverse current is a more effective mechanism for heating the plasma than collisional losses from the energetic electrons because the Ohmic losses are caused by thermal electrons in the reverse current which have much shorter mean free paths than the energetic electrons. The heating due to reverse currents is calculated for two injected energetic electron fluxes. For the smaller injected flux, the temperature of the coronal plasma is raised by about a factor of two. The larger flux causes the reverse current drift velocity to exceed the critical velocity for the onset of ion cyclotron turbulence, producing anomalous resistivity and an order of magnitude increase in the temperature. The heating is so rapid that the lack of ionization equilibrium may produce a soft X-ray and EUV pulse from the corona.

Racial bias in pain perception and response: experimental examination of automatic and deliberate processes.

PubMed

Mathur, Vani A; Richeson, Jennifer A; Paice, Judith A; Muzyka, Michael; Chiao, Joan Y

2014-05-01

Racial disparities in pain treatment pose a significant public health and scientific problem. Prior studies have demonstrated that clinicians and nonclinicians are less perceptive of, and suggest less treatment for, the pain of African Americans relative to European Americans. Here we investigate the effects of explicit/implicit patient race presentation, patient race, and perceiver race on pain perception and response. African American and European American participants rated pain perception, empathy, helping motivation, and treatment suggestion in response to vignettes about patients' pain. Vignettes were accompanied by a rapid (implicit) or static (explicit) presentation of an African or European American patient's face. Participants perceived and responded more to European American patients in the implicit prime condition, when the effect of patient race was below the level of conscious regulation. This effect was reversed when patient race was presented explicitly. Additionally, female participants perceived and responded more to the pain of all patients, relative to male participants, and in the implicit prime condition, African American participants were more perceptive and responsive than European Americans to the pain of all patients. Taken together, these results suggest that known disparities in pain treatment may be largely due to automatic (below the level of conscious regulation) rather than deliberate (subject to conscious regulation) biases. These biases were not associated with traditional implicit measures of racial attitudes, suggesting that biases in pain perception and response may be independent of general prejudice. Results suggest that racial biases in pain perception and treatment are at least partially due to automatic processes. When the relevance of patient race is made explicit, however, biases are attenuated and even reversed. We also find preliminary evidence that African Americans may be more sensitive to the pain of others than are European Americans. Copyright © 2014 American Pain Society. Published by Elsevier Inc. All rights reserved.

LETTER: Biased limiter experiments on the Advanced Toroidal Facility (ATF) torsatron

NASA Astrophysics Data System (ADS)

Uckan, T.; Isler, R. C.; Jernigan, T. C.; Lyon, J. F.; Mioduszewski, P. K.; Murakami, M.; Rasmussen, D. A.; Wilgen, J. B.; Aceto, S. C.; Zielinski, J. J.

1994-02-01

The Advanced Toroidal Facility (ATF) torsatron incorporates two rail limiters that can be positioned by external controls. The influence on the plasma parameters of biasing these limiters both positively and negatively with respect to the walls has been investigated. Experiments have been carried out in the electron cyclotron heated plasmas at 200 kW with a typical density of 5 × 1012 cm-3 and a central electron temperature of ~900 eV. Negative biasing produces only small changes in the plasma parameters, but positive biasing increases the particle confinement by about a factor of 5, although the plasma stored energy does fall at the higher voltages. In addition, positive biasing produces the following effects compared with floating limiter discharges: the core density profiles become peaked rather than hollow, the electric field at the edge becomes more negative (pointing radially inward), the magnitudes of the edge fluctuations and the fluctuation induced transport are reduced, the fluctuation wavelengths become longer and their propagation direction reverses from the electron to the ion diamagnetic direction. Neither polarity of biasing appears to affect the impurity content or transport

Detailed studies of full-size ATLAS12 sensors

NASA Astrophysics Data System (ADS)

Hommels, L. B. A.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Arratia, M.; Klein, C. T.; Ullan, M.; Fleta, C.; Fernandez-Tejero, J.; Bloch, I.; Gregor, I. M.; Lohwasser, K.; Poley, L.; Tackmann, K.; Trofimov, A.; Yildirim, E.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Gonzalez Sevilla, S.; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O`Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Mikestikova, M.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

2016-09-01

The "ATLAS ITk Strip Sensor Collaboration" R&D group has developed a second iteration of single-sided n+-in-p type micro-strip sensors for use in the tracker upgrade of the ATLAS experiment at the High-Luminosity (HL) LHC. The full size sensors measure approximately 97 × 97mm2 and are designed for tolerance against the 1.1 ×1015neq /cm2 fluence expected at the HL-LHC. Each sensor has 4 columns of 1280 individual 23.9 mm long channels, arranged at 74.5 μm pitch. Four batches comprising 120 sensors produced by Hamamatsu Photonics were evaluated for their mechanical, and electrical bulk and strip characteristics. Optical microscopy measurements were performed to obtain the sensor surface profile. Leakage current and bulk capacitance properties were measured for each individual sensor. For sample strips across the sensor batches, the inter-strip capacitance and resistance as well as properties of the punch-through protection structure were measured. A multi-channel probecard was used to measure leakage current, coupling capacitance and bias resistance for each individual channel of 100 sensors in three batches. The compiled results for 120 unirradiated sensors are presented in this paper, including summary results for almost 500,000 strips probed. Results on the reverse bias voltage dependence of various parameters and frequency dependence of tested capacitances are included for validation of the experimental methods used. Comparing results with specified values, almost all sensors fall well within specification.

Surprise influences hindsight-foresight differences in temporal judgments of animated automobile accidents.

PubMed

Calvillo, Dustin P; Gomes, Dayna M

2011-04-01

The hindsight bias occurs when people view an outcome as more foreseeable than it actually was. The role of an outcome's initial surprise in the hindsight bias was examined using animations of automobile accidents. Twenty-six participants rated the initial surprise of accidents' occurring in eight animations. An additional 84 participants viewed these animations in one of two conditions: Half stopped the animations when they were certain an accident would occur (i.e., in foresight), and the other half watched the entire animations first and then stopped the animations when they thought that a naïve viewer would be certain that an accident would occur (i.e., in hindsight). When the accidents were low in initial surprise, there were no foresight-hindsight differences; when initial surprise was medium, there was a hindsight bias; and when initial surprise was high, there was a reversed hindsight bias. The results are consistent with a sense-making model of hindsight bias.

A Dynamic Bayesian Observer Model Reveals Origins of Bias in Visual Path Integration.

PubMed

Lakshminarasimhan, Kaushik J; Petsalis, Marina; Park, Hyeshin; DeAngelis, Gregory C; Pitkow, Xaq; Angelaki, Dora E

2018-06-20

Path integration is a strategy by which animals track their position by integrating their self-motion velocity. To identify the computational origins of bias in visual path integration, we asked human subjects to navigate in a virtual environment using optic flow and found that they generally traveled beyond the goal location. Such a behavior could stem from leaky integration of unbiased self-motion velocity estimates or from a prior expectation favoring slower speeds that causes velocity underestimation. Testing both alternatives using a probabilistic framework that maximizes expected reward, we found that subjects' biases were better explained by a slow-speed prior than imperfect integration. When subjects integrate paths over long periods, this framework intriguingly predicts a distance-dependent bias reversal due to buildup of uncertainty, which we also confirmed experimentally. These results suggest that visual path integration in noisy environments is limited largely by biases in processing optic flow rather than by leaky integration. Copyright © 2018 Elsevier Inc. All rights reserved.

Unifying quantum heat transfer in a nonequilibrium spin-boson model with full counting statistics

NASA Astrophysics Data System (ADS)

Wang, Chen; Ren, Jie; Cao, Jianshu

2017-02-01

To study the full counting statistics of quantum heat transfer in a driven nonequilibrium spin-boson model, we develop a generalized nonequilibrium polaron-transformed Redfield equation with an auxiliary counting field. This enables us to study the impact of qubit-bath coupling ranging from weak to strong regimes. Without external modulations, we observe maximal values of both steady-state heat flux and noise power in moderate coupling regimes, below which we find that these two transport quantities are enhanced by the finite-qubit-energy bias. With external modulations, the geometric-phase-induced heat flux shows a monotonic decrease upon increasing the qubit-bath coupling at zero qubit energy bias (without bias). While under the finite-qubit-energy bias (with bias), the geometric-phase-induced heat flux exhibits an interesting reversal behavior in the strong coupling regime. Our results unify the seemingly contradictory results in weak and strong qubit-bath coupling regimes and provide detailed dissections for the quantum fluctuation of nonequilibrium heat transfer.

When advertising turns "cheeky"!

PubMed

Burkitt, Jennifer A; Saucier, Deborah M; Thomas, Nicole A; Ehresman, Crystal

2006-05-01

Portraits typically exhibit leftward posing biases, with people showing more of their left cheek than their right. The current study investigated posing biases in print advertising to determine whether the product advertised affects the posing bias. As the posing bias may be decreasing over time, we also investigated changes in posing biases over a span of more than 100 years. The current investigation coded 2664 advertisements from two time periods; advertisements were coded for target group of advertisement (men, women, both) and posing bias (rightward, leftward, or central). Unlike other studies that typically observe a leftward posing bias, print advertisements exhibit a rightward posing bias, regardless of time-frame. Thus, print advertisements differ greatly from portraits, which may relate to the purpose of advertisements and the role of attractiveness in advertising.

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

NASA Technical Reports Server (NTRS)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Attention bias modification training under working memory load increases the magnitude of change in attentional bias.

PubMed

Clarke, Patrick J F; Branson, Sonya; Chen, Nigel T M; Van Bockstaele, Bram; Salemink, Elske; MacLeod, Colin; Notebaert, Lies

2017-12-01

Attention bias modification (ABM) procedures have shown promise as a therapeutic intervention, however current ABM procedures have proven inconsistent in their ability to reliably achieve the requisite change in attentional bias needed to produce emotional benefits. This highlights the need to better understand the precise task conditions that facilitate the intended change in attention bias in order to realise the therapeutic potential of ABM procedures. Based on the observation that change in attentional bias occurs largely outside conscious awareness, the aim of the current study was to determine if an ABM procedure delivered under conditions likely to preclude explicit awareness of the experimental contingency, via the addition of a working memory load, would contribute to greater change in attentional bias. Bias change was assessed among 122 participants in response to one of four ABM tasks given by the two experimental factors of ABM training procedure delivered either with or without working memory load, and training direction of either attend-negative or avoid-negative. Findings revealed that avoid-negative ABM procedure under working memory load resulted in significantly greater reductions in attentional bias compared to the equivalent no-load condition. The current findings will require replication with clinical samples to determine the utility of the current task for achieving emotional benefits. These present findings are consistent with the position that the addition of a working memory load may facilitate change in attentional bias in response to an ABM training procedure. Copyright © 2017 Elsevier Ltd. All rights reserved.

Magnetic dipole discharges. II. Cathode and anode spot discharges and probe diagnostics

NASA Astrophysics Data System (ADS)

Stenzel, R. L.; Urrutia, J. M.; Ionita, C.; Schrittwieser, R.

2013-08-01

The high current regime of a magnetron-type discharge has been investigated. The discharge uses a permanent magnet as a cold cathode which emits secondary electrons while the chamber wall or a grounded electrode serves as the anode. As the discharge voltage is increased, the magnet develops cathode spots, which are short duration arcs that provide copious electrons to increase the discharge current dramatically. Short (1 μs), high current (200 A) and high voltage (750 V) discharge pulses are produced in a relaxation instability between the plasma and a charging capacitor. Spots are also observed on a negatively biased plane Langmuir probe. The probe current pulses are as large as those on the magnet, implying that the high discharge current does not depend on the cathode surface area but on the properties of the spots. The fast current pulses produce large inductive voltages, which can reverse the electrical polarity of the magnet and temporarily operate it as an anode. The discharge current may also oscillate at the frequency determined by the charging capacitor and the discharge circuit inductance. Each half cycle of high-current current pulses exhibits a fast (≃10 ns) current rise when a spot is formed. It induces high frequency (10-100 MHz) transients and ringing oscillations in probes and current circuits. Most probes behave like unmatched antennas for the electromagnetic pulses of spot discharges. Examples are shown to distinguish the source of oscillations and some rf characteristics of Langmuir probes.

Reliability Assessment of GaN Power Switches

DTIC Science & Technology

2015-04-17

Possibilities for single event burnout testing were examined as well. Device simulation under the conditions of some of the testing was performed on...reverse-bias (HTRB) and single electron burnout (SEE) tests. 8. Refine test structures, circuits, and procedures, and, if possible, develop

TRMM Solar Array Panels

NASA Technical Reports Server (NTRS)

1998-01-01

This final report presents conclusions/recommendations concerning the TRMM Solar Array; deliverable list and schedule summary; waivers and deviations; as-shipped performance data, including flight panel verification matrix, panel output detail, shadow test summary, humidity test summary, reverse bias test panel; and finally, quality assurance summary.

Threats to validity of nonrandomized studies of postdiagnosis exposures on cancer recurrence and survival.

PubMed

Chubak, Jessica; Boudreau, Denise M; Wirtz, Heidi S; McKnight, Barbara; Weiss, Noel S

2013-10-02

Studies of the effects of exposures after cancer diagnosis on cancer recurrence and survival can provide important information to the growing group of cancer survivors. Observational studies that address this issue generally fall into one of two categories: 1) those using health plan automated data that contain "continuous" information on exposures, such as studies that use pharmacy records; and 2) survey or interview studies that collect information directly from patients once or periodically postdiagnosis. Reverse causation, confounding, selection bias, and information bias are common in observational studies of cancer outcomes in relation to exposures after cancer diagnosis. We describe these biases, focusing on sources of bias specific to these types of studies, and we discuss approaches for reducing them. Attention to known challenges in epidemiologic research is critical for the validity of studies of postdiagnosis exposures and cancer outcomes.

Beyond valence in the perception of likelihood: the role of emotion specificity.

PubMed

DeSteno, D; Petty, R E; Wegener, D T; Rucker, D D

2000-03-01

Positive and negative moods have been shown to increase likelihood estimates of future events matching these states in valence (e.g., E. J. Johnson & A. Tversky, 1983). In the present article, 4 studies provide evidence that this congruency bias (a) is not limited to valence but functions in an emotion-specific manner, (b) derives from the informational value of emotions, and (c) is not the inevitable outcome of likelihood assessment under heightened emotion. Specifically, Study 1 demonstrates that sadness and anger, 2 distinct, negative emotions, differentially bias likelihood estimates of sad and angering events. Studies 2 and 3 replicate this finding in addition to supporting an emotion-as-information (cf. N. Schwarz & G. L. Clore, 1983), as opposed to a memory-based, mediating process for the bias. Finally, Study 4 shows that when the source of the emotion is salient, a reversal of the bias can occur given greater cognitive effort aimed at accuracy.

Threats to Validity of Nonrandomized Studies of Postdiagnosis Exposures on Cancer Recurrence and Survival

PubMed Central

2013-01-01

Studies of the effects of exposures after cancer diagnosis on cancer recurrence and survival can provide important information to the growing group of cancer survivors. Observational studies that address this issue generally fall into one of two categories: 1) those using health plan automated data that contain “continuous” information on exposures, such as studies that use pharmacy records; and 2) survey or interview studies that collect information directly from patients once or periodically postdiagnosis. Reverse causation, confounding, selection bias, and information bias are common in observational studies of cancer outcomes in relation to exposures after cancer diagnosis. We describe these biases, focusing on sources of bias specific to these types of studies, and we discuss approaches for reducing them. Attention to known challenges in epidemiologic research is critical for the validity of studies of postdiagnosis exposures and cancer outcomes. PMID:23940288

Political attitudes bias the mental representation of a presidential candidate's face.

PubMed

Young, Alison I; Ratner, Kyle G; Fazio, Russell H

2014-02-01

Using a technique known as reverse-correlation image classification, we demonstrated that the face of Mitt Romney as represented in people's minds varies as a function of their attitudes toward Mitt Romney. Our findings provide evidence that attitudes bias how people see something as concrete and well learned as the face of a political candidate during an election. Practically, our findings imply that citizens may not merely interpret political information about a candidate to fit their opinion, but also may construct a political world in which they literally see candidates differently.

Electroactive polymer gels based on epoxy resin

NASA Astrophysics Data System (ADS)

Samui, A. B.; Jayakumar, S.; Jayalakshmi, C. G.; Pandey, K.; Sivaraman, P.

2007-04-01

Five types of epoxy gels have been synthesized from common epoxy resins and hardeners. Fumed silica and nanoclay, respectively, were used as fillers and butyl methacrylate/acrylamide were used as monomer(s) for making interpenetrating polymer networks (IPNs) in three compositions. Swelling study, tensile property evaluation, dynamic mechanical thermal analysis, thermo-gravimetric analysis, scanning electron microscopy and electroactive property evaluation were done. The gels have sufficient mechanical strength and the time taken for bending to 20° was found to be 22 min for forward bias whereas it was just 12 min for reverse bias.

Neutron detection using the superconducting Nb-based current-biased kinetic inductance detector

NASA Astrophysics Data System (ADS)

Shishido, Hiroaki; Yamaguchi, Hiroyuki; Miki, Yuya; Miyajima, Shigeyuki; Oikawa, Kenichi; Harada, Masahide; Hidaka, Mutsuo; Oku, Takayuki; Arai, Masatoshi; Fujimaki, Akira; Ishida, Takekazu

2017-09-01

We demonstrate neutron detection using a solid-state 3He-free superconducting current-biased kinetic inductance detector (CB-KID), which consists of a superconducting Nb meander line and 10B neutron absorption layer. The CB-KID is based on the transient process of kinetic inductance of Cooper pairs induced by the nuclear reaction between 10B and neutrons. Therefore, the CB-KID can be operated in a wide superconducting region in the bias current-temperature diagram, as demonstrated in this paper. The transient change of the kinetic inductance induces the electromagnetic wave pulse under a DC bias current. The signal propagates along the meander line toward both sides with opposite polarity, where the signal polarity is dominated by the bias current direction. The full width at half maximum of the signals remains on the order of a few tens of ns, which confirms the high-speed operation of our detectors. We determine the neutron incident position within 1.3 mm accuracy in one dimension using the multichannel CB-KIDs.

Can free-viewing perceptual asymmetries be explained by scanning, pre-motor or attentional biases?

PubMed

Nicholls, Michael E R; Roberts, Georgina R

2002-04-01

Judgments of relative magnitude between the left and right sides of a stimulus are generally weighted toward the features contained on the left side. This leftward perceptual bias could be the result of, (a) left-to-right scanning biases, (b) pre-motor activation of the right hemisphere, or (c) a left hemispatial attentional bias. The relative merits of these explanations of perceptual asymmetry were investigated. In Experiment 1, English and Hebrew readers made luminance judgements for two left/right mirror-reversed luminance gradients (greyscales task). Despite different reading/scanning habits, both groups exhibited a leftward perceptual bias. English and Hebrew readers also performed a line bisection task. Scanning biases were controlled by asking participants to follow a marker as it moved left-to-right or right-to-left and then stop it as it reached the midpoint of the line. Despite controlling scanning, a leftward bias was observed in both groups. In Experiment 2, peripheral spatial cues were presented prior to the greyscales stimuli. English readers showed a reduction in the leftward bias for right-sided cues as compared to left-sided and neutral cues. Right-side cues presumably overcame a pre-existing leftward attentional bias. In both experiments, pre-motor activation was controlled using bimanual responses. Despite this control, a leftward bias was observed throughout the study. The data support the attentional bias account of leftward perceptual biases over the scanning and pre-motor activation accounts. Whether or not unilateral hemispheric activation provides an adequate account of this attentional bias is discussed.

The effects of drugs on human models of emotional processing: an account of antidepressant drug treatment.

PubMed

Pringle, Abbie; Harmer, Catherine J

2015-12-01

Human models of emotional processing suggest that the direct effect of successful antidepressant drug treatment may be to modify biases in the processing of emotional information. Negative biases in emotional processing are documented in depression, and single or short-term dosing with conventional antidepressant drugs reverses these biases in depressed patients prior to any subjective change in mood. Antidepressant drug treatments also modulate emotional processing in healthy volunteers, which allows the consideration of the psychological effects of these drugs without the confound of changes in mood. As such, human models of emotional processing may prove to be useful for testing the efficacy of novel treatments and for matching treatments to individual patients or subgroups of patients.

Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

DOEpatents

Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

2011-03-22

A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

Analysis and Countermeasure Study on DC Bias of Main Transformer in a City

NASA Astrophysics Data System (ADS)

Wang, PengChao; Wang, Hongtao; Song, Xinpu; Gu, Jun; Liu, yong; Wu, weili

2017-07-01

According to the December 2015 Guohua Beijing thermal power transformer DC magnetic bias phenomenon, the monitoring data of 24 hours of direct current is analyzed. We find that the maximum DC current is up to 25 and is about 30s for the trend cycle, on this basis, then, of the geomagnetic storm HVDC and subway operation causes comparison of the mechanism, and make a comprehensive analysis of the thermal power plant’s geographical location, surrounding environment and electrical contact etc.. The results show that the main reason for the DC bias of Guohua thermal power transformer is the operation of the subway, and the change of the DC bias current is periodic. Finally, of Guohua thermal power transformer DC magnetic bias control method is studied, the simulation results show that the method of using neutral point with small resistance or capacitance can effectively inhibit the main transformer neutral point current.

The effects of model composition design choices on high-fidelity simulations of motoneuron recruitment and firing behaviors

NASA Astrophysics Data System (ADS)

Allen, John M.; Elbasiouny, Sherif M.

2018-06-01

Objective. Computational models often require tradeoffs, such as balancing detail with efficiency; yet optimal balance should incorporate sound design features that do not bias the results of the specific scientific question under investigation. The present study examines how model design choices impact simulation results. Approach. We developed a rigorously-validated high-fidelity computational model of the spinal motoneuron pool to study three long-standing model design practices which have yet to be examined for their impact on motoneuron recruitment, firing rate, and force simulations. The practices examined were the use of: (1) generic cell models to simulate different motoneuron types, (2) discrete property ranges for different motoneuron types, and (3) biological homogeneity of cell properties within motoneuron types. Main results. Our results show that each of these practices accentuates conditions of motoneuron recruitment based on the size principle, and minimizes conditions of mixed and reversed recruitment orders, which have been observed in animal and human recordings. Specifically, strict motoneuron orderly size recruitment occurs, but in a compressed range, after which mixed and reverse motoneuron recruitment occurs due to the overlap in electrical properties of different motoneuron types. Additionally, these practices underestimate the motoneuron firing rates and force data simulated by existing models. Significance. Our results indicate that current modeling practices increase conditions of motoneuron recruitment based on the size principle, and decrease conditions of mixed and reversed recruitment order, which, in turn, impacts the predictions made by existing models on motoneuron recruitment, firing rate, and force. Additionally, mixed and reverse motoneuron recruitment generated higher muscle force than orderly size motoneuron recruitment in these simulations and represents one potential scheme to increase muscle efficiency. The examined model design practices, as well as the present results, are applicable to neuronal modeling throughout the nervous system.

Breaking the rules: sex roles and genetic mating system of the pheasant coucal.

PubMed

Maurer, G; Double, M C; Milenkaya, O; Süsser, M; Magrath, R D

2011-10-01

Generally in birds, the classic sex roles of male competition and female choice result in females providing most offspring care while males face uncertain parentage. In less than 5% of species, however, reversed courtship sex roles lead to predominantly male care and low extra-pair paternity. These role-reversed species usually have reversed sexual size dimorphism and polyandry, confirming that sexual selection acts most strongly on the sex with the smaller parental investment and accordingly higher potential reproductive rate. We used parentage analyses and observations from three field seasons to establish the social and genetic mating system of pheasant coucals, Centropus phasianinus, a tropical nesting cuckoo, where males are much smaller than females and provide most parental care. Pheasant coucals are socially monogamous and in this study males produced about 80% of calls in the dawn chorus, implying greater male sexual competition. Despite the substantial male investments, extra-pair paternity was unusually high for a socially monogamous, duetting species. Using two or more mismatches to determine extra-pair parentage, we found that 11 of 59 young (18.6%) in 10 of 21 broods (47.6%) were not sired by their putative father. Male incubation, starting early in the laying sequence, may give the female opportunity and reason to seek these extra-pair copulations. Monogamy, rather than the polyandry and sex-role reversal typical of its congener, C. grillii, may be the result of the large territory size, which could prevent females from monopolising multiple males. The pheasant coucal's exceptional combination of classic sex-roles and male-biased care for extra-pair young is hard to reconcile with current sexual selection theory, but may represent an intermediate stage in the evolution of polyandry or an evolutionary remnant of polyandry.

The effects of model composition design choices on high-fidelity simulations of motoneuron recruitment and firing behaviors.

PubMed

Allen, John M; Elbasiouny, Sherif M

2018-06-01

Computational models often require tradeoffs, such as balancing detail with efficiency; yet optimal balance should incorporate sound design features that do not bias the results of the specific scientific question under investigation. The present study examines how model design choices impact simulation results. We developed a rigorously-validated high-fidelity computational model of the spinal motoneuron pool to study three long-standing model design practices which have yet to be examined for their impact on motoneuron recruitment, firing rate, and force simulations. The practices examined were the use of: (1) generic cell models to simulate different motoneuron types, (2) discrete property ranges for different motoneuron types, and (3) biological homogeneity of cell properties within motoneuron types. Our results show that each of these practices accentuates conditions of motoneuron recruitment based on the size principle, and minimizes conditions of mixed and reversed recruitment orders, which have been observed in animal and human recordings. Specifically, strict motoneuron orderly size recruitment occurs, but in a compressed range, after which mixed and reverse motoneuron recruitment occurs due to the overlap in electrical properties of different motoneuron types. Additionally, these practices underestimate the motoneuron firing rates and force data simulated by existing models. Our results indicate that current modeling practices increase conditions of motoneuron recruitment based on the size principle, and decrease conditions of mixed and reversed recruitment order, which, in turn, impacts the predictions made by existing models on motoneuron recruitment, firing rate, and force. Additionally, mixed and reverse motoneuron recruitment generated higher muscle force than orderly size motoneuron recruitment in these simulations and represents one potential scheme to increase muscle efficiency. The examined model design practices, as well as the present results, are applicable to neuronal modeling throughout the nervous system.

Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

NASA Astrophysics Data System (ADS)

Okino, Hiroyuki; Kameshiro, Norifumi; Konishi, Kumiko; Shima, Akio; Yamada, Ren-ichi

2017-12-01

Nickel (Ni), titanium (Ti), and molybdenum (Mo) 4H-silicon carbide Schottky-barrier diodes (SiC SBDs) were fabricated and used to investigate the relation between forward and reverse currents. Temperature dependence of reverse current follows a theory that includes tunneling in regard to thermionic emission, namely, temperature dependence is weak at low temperature but strong at high temperatures. On the other hand, the reverse currents of the Ni and Mo SBDs are higher than their respective currents calculated from their Schottky barrier heights (SBHs), whereas the reverse current of the Ti SBD agrees well with that calculated from its SBH. The cause of the high reverse currents was investigated from the viewpoints of low barrier patch, Gaussian distribution of barrier height (GD), thin surface barrier, and electron effective mass. The high reverse current of the Ni and Mo SBDs can be explained not in terms of a low-barrier patch, GD, or thin surface barrier but in terms of small effective masses. Investigation of crystal structures at the Schottky interface revealed a large lattice mismatch between the metals (Ni, Ti, or Mo) and SiC for the Ni and Mo SBDs. The small effective mass is possibly attributed to the large lattice mismatch, which might generate transition layers at the Schottky interface. It is concluded from these results that the lattice constant as well as the work function is an important factor in selecting the metal species as the Schottky metal for wide band-gap SBDs, for which tunneling current dominates reverse current.

Income and obesity: what is the direction of the relationship? A systematic review and meta-analysis

PubMed Central

Kim, Tae Jun; von dem Knesebeck, Olaf

2018-01-01

Objective It was repeatedly shown that lower income is associated with higher risks for subsequent obesity. However, the perspective of a potential reverse causality is often neglected, in which obesity is considered a cause for lower income, when obese people drift into lower-income jobs due to labour–market discrimination and public stigmatisation. This review was performed to explore the direction of the relation between income and obesity by specifically assessing the importance of social causation and reverse causality. Design Systematic review and meta-analysis. Methods A systematic literature search was conducted in January 2017. The databases Medline, PsycINFO, Sociological Abstracts, International Bibliography of Social Sciences and Sociological Index were screened to identify prospective cohort studies with quantitative data on the relation between income and obesity. Meta-analytic methods were applied using random-effect models, and the quality of studies assessed with the Newcastle-Ottawa Scale. Results In total, 21 studies were eligible for meta-analysis. All included studies originated from either the USA (n=16), the UK (n=3) or Canada (n=2). From these, 14 studies on causation and 7 studies on reverse causality were found. Meta-analyses revealed that lower income is associated with subsequent obesity (OR 1.27, 95% CI 1.10 to 1.47; risk ratio 1.52, 95% CI 1.08 to 2.13), though the statistical significance vanished once adjusted for publication bias. Studies on reverse causality indicated a more consistent relation between obesity and subsequent income, even after taking publication bias into account (standardised mean difference −0.15, 95% CI −0.30 to 0.01). Sensitivity analyses implied that the association is influenced by obesity measurement, gender, length of observation and study quality. Conclusions Findings suggest that there is more consistent evidence for reverse causality. Therefore, there is a need to examine reverse causality processes in more detail to understand the relation between income and obesity. PROSPERO registration number 42016041296. PMID:29306894

How rapidly does the excess risk of lung cancer decline following quitting smoking? A quantitative review using the negative exponential model.

PubMed

Fry, John S; Lee, Peter N; Forey, Barbara A; Coombs, Katharine J

2013-10-01

The excess lung cancer risk from smoking declines with time quit, but the shape of the decline has never been precisely modelled, or meta-analyzed. From a database of studies of at least 100 cases, we extracted 106 blocks of RRs (from 85 studies) comparing current smokers, former smokers (by time quit) and never smokers. Corresponding pseudo-numbers of cases and controls (or at-risk) formed the data for fitting the negative exponential model. We estimated the half-life (H, time in years when the excess risk becomes half that for a continuing smoker) for each block, investigated model fit, and studied heterogeneity in H. We also conducted sensitivity analyses allowing for reverse causation, either ignoring short-term quitters (S1) or considering them smokers (S2). Model fit was poor ignoring reverse causation, but much improved for both sensitivity analyses. Estimates of H were similar for all three analyses. For the best-fitting analysis (S1), H was 9.93 (95% CI 9.31-10.60), but varied by sex (females 7.92, males 10.71), and age (<50years 6.98, 70+years 12.99). Given that reverse causation is taken account of, the model adequately describes the decline in excess risk. However, estimates of H may be biased by factors including misclassification of smoking status. Copyright © 2013 The Authors. Published by Elsevier Inc. All rights reserved.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

NASA Astrophysics Data System (ADS)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

Gender Equity: Still Knocking at the Classroom Door.

ERIC Educational Resources Information Center

Sadker, David

1999-01-01

Subtlety and complacency mask ongoing gender bias in today's classrooms. Updates are presented concerning career segregation; single-sex classrooms; safety and health problems; dropout rates; gifted programs; male/female stereotypes; classroom interactions; SAT scores; math, science and technology gender gaps; political reversals; and female…

Mapping Ionic Currents and Reactivity on the Nanoscale: Electrochemical Strain Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalinin, S.V.

2010-10-19

Solid-state electrochemical processes in oxides underpin a broad spectrum of energy and information storage devices, ranging from Li-ion and Li-air batteries, to solid oxide fuel cells (SOFC) to electroresistive and memristive systems. These functionalities are controlled by the bias-driven diffusive and electromigration transport of mobile ionic species, as well as intricate a set of electrochemical and defect-controlled reactions at interfaces and in bulk. Despite the wealth of device-level and atomistic studies, little is known on the mesoscopic mechanisms of ion diffusion and electronic transport on the level of grain clusters, individual grains, and extended defects. The development of the capabilitymore » for probing ion transport on the nanometer scale is a key to deciphering complex interplay between structure, functionality, and performance in these systems. Here we introduce Electrochemical Strain Microscopy, a scanning probe microscopy technique based on strong strain-bias coupling in the systems in which local ion concentrations are changed by electrical fields. The imaging capability, as well as time- and voltage spectroscopies analogous to traditional current based electrochemical characterization methods are developed. The reversible intercalation of Li and mapping electrochemical activity in LiCoO2 is demonstrated, illustrating higher Li diffusivity at non-basal planes and grain boundaries. In Si-anode device structure, the direct mapping of Li diffusion at extended defects and evolution of Li-activity with charge state is explored. The electrical field-dependence of Li mobility is studied to determine the critical bias required for the onset of electrochemical transformation, allowing reaction and diffusion processes in the battery system to be separated at each location. Finally, the applicability of ESM for probing oxygen vacancy diffusion and oxygen reduction/evolution reactions is illustrated, and the high resolution ESM maps are correlated with aberration corrected scanning transmission electron microscopy imaging. The future potential for deciphering mechanisms of electrochemical transformations on an atomically-defined single-defect level is discussed.« less

Vortex jump behavior in coupled nanomagnetic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, S.; Phatak, C., E-mail: cd@anl.gov; Petford-Long, A. K.

2014-11-24

The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated andmore » the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. The work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.« less

Gyrotropic response in the absence of a bias field

PubMed Central

Wang, Zhiyu; Wang, Zheng; Wang, Jingyu; Zhang, Bin; Huangfu, Jiangtao; Joannopoulos, John D.; Soljačić, Marin; Ran, Lixin

2012-01-01

Electromagnetic materials lacking local time-reversal symmetry, such as gyrotropic materials, are of keen interest and importance both scientifically and technologically. Scientifically, topologically nontrivial phenomena, such as photonic chiral edge states, allow for reflection-free transport even in the presence of large disorder. Technologically, nonreciprocal photonic devices, such as optical isolators and circulators, play critical roles in optical communication and computing technologies because of their ability to eliminate cross-talk and feedback. Nevertheless, most known natural materials that lack local time-reversal symmetry require strong external fields and function only in a limited range of the electromagnetic spectrum. By taking advantage of metamaterials capable of translating the property of unidirectional active electronic circuits into effective dielectric response, we introduce a microwave gyrotropic metamaterial that does not require an external magnetic bias. Strong bulk Faraday-like effects, observed in both simulations and experiments, confirm nonreciprocity of the effective medium. This approach is scalable to many other wavelengths, and it also illustrates an opportunity to synthesize exotic electromagnetic materials. PMID:22847403

Vortex jump behavior in coupled nanomagnetic heterostructures

NASA Astrophysics Data System (ADS)

Zhang, S.; Petford-Long, A. K.; Heinonen, O.; Phatak, C.

2014-11-01

The spin configuration and magnetic behavior in patterned nanostructures can be controlled by manipulating the interplay between the competing energy terms. This in turn requires fundamental knowledge of the magnetic interactions at the local nanometer scale. Here, we report on the spin structure and magnetization behavior of patterned discs containing exchange coupled ferromagnetic layers with additional exchange bias to an antiferromagnetic layer. The magnetization reversal was explored by direct local visualization of the domain behavior using in-situ Lorentz transmission electron microscopy, from which quantitative magnetic induction maps were reconstructed. The roles of the main competing energy terms were elucidated and the reversal mechanism was identified as a coupled phenomenon of incoherent rotation in the exchange-biased layer and localized vortex nucleation and discontinuous propagation in the free layer, including an anomalous jump in the trajectory. The observations were supported by micromagnetic simulations and modeled phase shift simulations. The work presented here provides fundamental insights into opportunities for macroscopic control of the energy landscape of magnetic heterostructures for functional applications.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Gyrotropic response in the absence of a bias field.

PubMed

Wang, Zhiyu; Wang, Zheng; Wang, Jingyu; Zhang, Bin; Huangfu, Jiangtao; Joannopoulos, John D; Soljačić, Marin; Ran, Lixin

2012-08-14

Electromagnetic materials lacking local time-reversal symmetry, such as gyrotropic materials, are of keen interest and importance both scientifically and technologically. Scientifically, topologically nontrivial phenomena, such as photonic chiral edge states, allow for reflection-free transport even in the presence of large disorder. Technologically, nonreciprocal photonic devices, such as optical isolators and circulators, play critical roles in optical communication and computing technologies because of their ability to eliminate cross-talk and feedback. Nevertheless, most known natural materials that lack local time-reversal symmetry require strong external fields and function only in a limited range of the electromagnetic spectrum. By taking advantage of metamaterials capable of translating the property of unidirectional active electronic circuits into effective dielectric response, we introduce a microwave gyrotropic metamaterial that does not require an external magnetic bias. Strong bulk Faraday-like effects, observed in both simulations and experiments, confirm nonreciprocity of the effective medium. This approach is scalable to many other wavelengths, and it also illustrates an opportunity to synthesize exotic electromagnetic materials.

Electrochemically Driven Deactivation and Recovery in PrBaCo2 O5+δ Oxygen Electrodes for Reversible Solid Oxide Fuel Cells.

PubMed

Zhu, Lin; Wei, Bo; Wang, Zhihong; Chen, Kongfa; Zhang, Haiwu; Zhang, Yaohui; Huang, Xiqiang; Lü, Zhe

2016-09-08

The understanding of surface chemistry changes on oxygen electrodes is critical for the development of reversible solid oxide fuel cell (RSOFC). Here, we report for the first time that the electrochemical potentials can drastically affect the surface composition and hence the electrochemical activity and stability of PrBaCo2 O5+δ (PBCO) electrodes. Anodic polarization degrades the activity of the PBCO electrode, whereas the cathodic bias could recover its performance. Alternating anodic/cathodic polarization for 180 h confirms this behavior. Microstructure and chemical analysis clearly show that anodic bias leads to the accumulation and segregation of insulating nanosized BaO on the electrode surface, whereas cathodic polarization depletes the surface species. Therefore, a mechanism based on the segregation and incorporation of BaO species under electrochemical potentials is considered to be responsible for the observed deactivation and recovery process, respectively. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pepducins as a potential treatment strategy for asthma and COPD.

PubMed

Panettieri, Reynold A; Pera, Tonio; Liggett, Stephen B; Benovic, Jeffrey L; Penn, Raymond B

2018-05-02

Current therapies to treat asthma and other airway diseases primarily include anti-inflammatory agents and bronchodilators. Anti-inflammatory agents target trafficking and resident immunocytes and structural cells, while bronchodilators act to prevent or reverse shortening of airway smooth muscle (ASM), the pivotal tissue regulating bronchomotor tone. Advances in our understanding of the biology of G protein-coupled receptors (GPCRs) and biased agonism offers unique opportunities to modulate GPCR function that include the use of pepducins and allosteric modulators. Recent evidence suggests that small molecule inhibitors of Gα q as well as pepducins targeting G q -coupled receptors can broadly inhibit contractile agonist-induced ASM function. Given these advances, new therapeutic approaches can be leveraged to diminish the global rise in morbidity and mortality associated with asthma and chronic obstructive pulmonary disease. Copyright © 2018. Published by Elsevier Ltd.

Little-Parks oscillations in superconducting ring with Josephson junctions

NASA Astrophysics Data System (ADS)

Sharon, Omri J.; Sharoni, Amos; Berger, Jorge; Shaulov, Avner; Yeshurun, Yosi

2018-03-01

Nb nano-rings connected serially by Nb wires exhibit, at low bias currents, the typical parabolic Little-Parks magnetoresistance oscillations. As the bias current increases, these oscillations become sinusoidal. This result is ascribed to the generation of Josephson junctions caused by the combined effect of current-induced phase slips and the non-uniformity of the order parameter along each ring due to the Nb wires attached to it. This interpretation is validated by further increasing the bias current, which results in magnetoresistance oscillations typical of a SQUID.

A Reverse Stroop Task with Mouse Tracking.

PubMed

Yamamoto, Naohide; Incera, Sara; McLennan, Conor T

2016-01-01

In a reverse Stroop task, observers respond to the meaning of a color word irrespective of the color in which the word is printed-for example, the word red may be printed in the congruent color (red), an incongruent color (e.g., blue), or a neutral color (e.g., white). Although reading of color words in this task is often thought to be neither facilitated by congruent print colors nor interfered with incongruent print colors, this interference has been detected by using a response method that does not give any bias in favor of processing of word meanings or processing of print colors. On the other hand, evidence for the presence of facilitation in this task has been scarce, even though this facilitation is theoretically possible. By modifying the task such that participants respond to a stimulus color word by pointing to a corresponding response word on a computer screen with a mouse, the present study investigated the possibility that not only interference but also facilitation would take place in a reverse Stroop task. Importantly, in this study, participants' responses were dynamically tracked by recording the entire trajectories of the mouse. Arguably, this method provided richer information about participants' performance than traditional measures such as reaction time and accuracy, allowing for more detailed (and thus potentially more sensitive) investigation of facilitation and interference in the reverse Stroop task. These trajectories showed that the mouse's approach toward correct response words was significantly delayed by incongruent print colors but not affected by congruent print colors, demonstrating that only interference, not facilitation, was present in the current task. Implications of these findings are discussed within a theoretical framework in which the strength of association between a task and its response method plays a critical role in determining how word meanings and print colors interact in reverse Stroop tasks.

A Reverse Stroop Task with Mouse Tracking

PubMed Central

Yamamoto, Naohide; Incera, Sara; McLennan, Conor T.

2016-01-01

In a reverse Stroop task, observers respond to the meaning of a color word irrespective of the color in which the word is printed—for example, the word red may be printed in the congruent color (red), an incongruent color (e.g., blue), or a neutral color (e.g., white). Although reading of color words in this task is often thought to be neither facilitated by congruent print colors nor interfered with incongruent print colors, this interference has been detected by using a response method that does not give any bias in favor of processing of word meanings or processing of print colors. On the other hand, evidence for the presence of facilitation in this task has been scarce, even though this facilitation is theoretically possible. By modifying the task such that participants respond to a stimulus color word by pointing to a corresponding response word on a computer screen with a mouse, the present study investigated the possibility that not only interference but also facilitation would take place in a reverse Stroop task. Importantly, in this study, participants’ responses were dynamically tracked by recording the entire trajectories of the mouse. Arguably, this method provided richer information about participants’ performance than traditional measures such as reaction time and accuracy, allowing for more detailed (and thus potentially more sensitive) investigation of facilitation and interference in the reverse Stroop task. These trajectories showed that the mouse’s approach toward correct response words was significantly delayed by incongruent print colors but not affected by congruent print colors, demonstrating that only interference, not facilitation, was present in the current task. Implications of these findings are discussed within a theoretical framework in which the strength of association between a task and its response method plays a critical role in determining how word meanings and print colors interact in reverse Stroop tasks. PMID:27199881