AlGaN channel field effect transistors with graded heterostructure ohmic contacts

NASA Astrophysics Data System (ADS)

Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

2016-09-01

We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

Characterization of reaction kinetics in a porous electrode

NASA Technical Reports Server (NTRS)

Fedkiw, Peter S.

1990-01-01

A continuum-model approach, analogous to porous electrode theory, was applied to a thin-layer cell of rectangular and cylindrical geometry. A reversible redox couple is assumed, and the local reaction current density is related to the potential through the formula of Hubbard and Anson for a uniformily accessible thin-layer cell. The placement of the reference electrode is also accounted for in the analysis. Primary emphasis is placed on the effect of the solution-phase ohmic potential drop on the voltammogram characteristics. Correlation equations for the peak-potential displacement from E(sup 0 prime) and the peak current are presented in terms of two dimensionless parameters.

A study of the Au/Ni ohmic contact on p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, D.; Yu, L. S.; Lau, S. S.

2000-10-01

The formation mechanism of the ohmic Au/Ni/p-GaN contact has been investigated. We found that it is essential to (i) deposit a structure of Au and Ni in the proper deposition sequence, and (ii) anneal the bilayer structure in an oxygen containing ambient. Our findings indicated that oxygen assists the layer-reversal reactions of the metallized layers to form a structure of NiO/Au/p-GaN. The presence of oxygen during annealing appears to increase the conductivity of the p-GaN. It is further suggested that Ni removes or reduces the surface contamination of the GaN sample before or during layer reversal. In the final contactmore » structure, an Au layer, which has a large work function, is in contact with the p-GaN substrate. The presence of Au in the entire contacting layer improves the conductivity of the contact. An ohmic formation mechanism based on our experimental results is proposed and discussed in this work. (c) 2000 American Institute of Physics.« less

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Heterojunction photodiode on cleaved SiC

NASA Astrophysics Data System (ADS)

Solovan, Mykhailo M.; Farah, John; Kovaliuk, Taras T.; Brus, Viktor V.; Mostovyi, Andrii I.; Maistruk, Eduard V.; Maryanchuk, Pavlo D.

2018-01-01

Graphite/n-SiC Shottky diodes were prepared by means of the recently proposed technique based on the transferring of drawn graphite films onto the n-SiC single crystal substrate. Current-voltage characteristics were measured and analyzed. High quality ohmic contancts were prepared by the DC magnetron sputtering of Ni thin films onto cleaved n-type SiC single crystal substrates. The height of the potential barrier and the series resistance of the graphite/n-SiC junctions were measured and analysed. The dominant current transport mechanisms through the diodes were determined. There was shown that the dominant current transport mechanisms through the graphite/n-SiC Shottky diodes were the multi-step tunnel-recombination at forward bias and the tunnelling mechanisms at reverse bias.

Ohmic Heating: An Emerging Concept in Organic Synthesis.

PubMed

Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

2017-06-12

The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Positional stability of field-reversed-configurations in the presence of resistive walls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rath, N., E-mail: nrath@trialphanenergy.com; Onofri, M.; Barnes, D. C.

2016-06-15

We show that in a field-reversed-configuration, the plasma is unstable to either transverse or axial rigid displacement, but never to both. Driving forces are found to be parallel to the direction of displacement with no orthogonal components. Furthermore, we demonstrate that the properties of a resistive wall (geometry and resistivity) in the vicinity of the plasma do not affect whether the plasma is stable or unstable, but in the case of an unstable system determine the instability growth rate. Depending on the properties of the wall, the instability growth is dominated by plasma inertia (and not affected by wall resistivity)more » or dominated by ohmic dissipation of wall eddy currents (and thus proportional to the wall resistivity).« less

Runaway Geneeration In Disruptions Of Plasmas In TFTR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fredrickson, E. D.; Bell, M. G.; Taylor, G.

2014-03-31

Many disruptions in the Tokamak Fusion Test Reactor (TFTR) [D. Meade and the TFTR Group, in Proceedings of the International Conference on Plasma Physics and Controlled Nuclear Fusion, Washington, DC, 1990 (International Atomic Energy Agency, Vienna, 1991), Vol. 1, pp. 9-24] produced populations of runaway electrons which carried a significant fraction of the original plasma current. In this paper, we describe experiments where, following a disruption of a low-beta, reversed shear plasma, currents of up to 1 MA carried mainly by runaway electrons were controlled and then ramped down to near zero using the ohmic transformer. In the longer lastingmore » runaway plasmas, Parail-Pogutse instabilities were observed.« less

High magnetic field ohmically decoupled non-contact technology

DOEpatents

Wilgen, John [Oak Ridge, TN; Kisner, Roger [Knoxville, TN; Ludtka, Gerard [Oak Ridge, TN; Ludtka, Gail [Oak Ridge, TN; Jaramillo, Roger [Knoxville, TN

2009-05-19

Methods and apparatus are described for high magnetic field ohmically decoupled non-contact treatment of conductive materials in a high magnetic field. A method includes applying a high magnetic field to at least a portion of a conductive material; and applying an inductive magnetic field to at least a fraction of the conductive material to induce a surface current within the fraction of the conductive material, the surface current generating a substantially bi-directional force that defines a vibration. The high magnetic field and the inductive magnetic field are substantially confocal, the fraction of the conductive material is located within the portion of the conductive material and ohmic heating from the surface current is ohmically decoupled from the vibration. An apparatus includes a high magnetic field coil defining an applied high magnetic field; an inductive magnetic field coil coupled to the high magnetic field coil, the inductive magnetic field coil defining an applied inductive magnetic field; and a processing zone located within both the applied high magnetic field and the applied inductive magnetic field. The high magnetic field and the inductive magnetic field are substantially confocal, and ohmic heating of a conductive material located in the processing zone is ohmically decoupled from a vibration of the conductive material.

Change of Paradigm for the Reversed Field Pinch

NASA Astrophysics Data System (ADS)

Escande, D. F.

2010-11-01

The reversed field pinch (RFP) is a magnetic configuration germane to the tokamak, but it produces most of its magnetic field by the currents flowing inside the plasma; external coils provide only a small edge toroidal field whose sign is reversed with respect to the central one, whence the name of the configuration. Because of the presence of magnetic turbulence and chaos, the RFP had been considered for a long period as a terrible confinement configuration. However, recently a change of paradigm occurred for this device. Indeed, when the toroidal current is increased in the RFX-mod RFP in Padua (Italy), a self-organized helical state with an internal transport barrier (ITB) develops, and a broad zone of the plasma becomes hot (above 1 keV for a magnetic field above 0.8 T). The present theoretical picture of the RFP mainly comes from three-dimensional nonlinear visco-resistive MHD simulations whose dynamics has strong similarities with the experimental one, and triggered the experimental search for RFP states with improved confinement. The RFP ohmic state involves a helical electrostatic potential generating, as an electric drift, the so-called dynamo velocity field. The magnetic topology can bifurcate from a magnetic island to kink-like magnetic surfaces with higher resilience to magnetic chaos. This theoretical scenario was found to be relevant when ITB's enclosing a broad hot domain were discovered. The ITBs occur in the vicinity of the maximum of the safety factor. The new paradigm for the RFP supports its reappraisal as a low-external field, non-disruptive, ohmically heated approach to magnetic fusion, exploiting both self-organization and technological simplicity. Furthermore the RFP has the same Greenwald density limit as the tokamak, and it is an excellent test bed for the efficient control of multiple resistive wall modes. Its helical magnetic structure makes it germane to the stellarator too. As a result the RFP is also useful to bring support to the present two main lines of magnetic confinement.

Bistable resistive memory behavior in gelatin-CdTe quantum dot composite film

NASA Astrophysics Data System (ADS)

Vallabhapurapu, Sreedevi; Rohom, Ashwini; Chaure, N. B.; Du, Shengzhi; Srinivasan, Ananthakrishnan

2018-05-01

Bistable memory behavior has been observed for the first time in gelatin type A thin film dispersed with functionalized CdTe quantum dots. The two terminal device with the polymer nanocomposite layer sandwiched between an indium tin oxide coated glass plate and an aluminium top electrode performs as a bistable resistive random access memory module. Butterfly shaped (O-shaped with a hysteresis in forward and reverse sweeps) current-voltage response is observed in this device. The conduction mechanism leading to the bistable electrical switching has been deduced to be a combination of ohmic and electron hopping.

Resistance characterization of nickel sulfide electrodes in LiCl-containing molten salt electrolytes

NASA Astrophysics Data System (ADS)

Redey, L.; Vissers, D. R.

The electrode kinetics of a high area loading: (545.6 mAh/cm(2) for the Ni reversible NiS transition), porous nickel sulfide electrode were studied under one-dimensional current distribution in a half-cell-type test arrangement. Area-specific resistance values (ASR/sub t/) were measured under wide variety of conditions: temperature, 450 to 490(0)C; current density, 0.01 to 3A/cm(2); and mechanical stress, 0.11 to 1.68 kg/cm(2). The ASR/sub t/ values were used for quantitative characterization of the ohmic-related and electrochemical-related resistances of the electrode bed. When cycled in the Ni reversible NiS transition range, the electrode showed good utilization and excellent power characteristics in an all-lithium-cation (LiF-LiCl-LiBr) electrolyte. Capability of continuous cycling at high rates (up to 800 mA/cm(12) was demonstrated. The performance of the electrode was also found to be dependent on the mechanical stress developed in the electrode.

Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

2017-06-01

Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

Theoretical transport modeling of Ohmic cold pulse experiments

NASA Astrophysics Data System (ADS)

Kinsey, J. E.; Waltz, R. E.; St. John, H. E.

1998-11-01

The response of several theory-based transport models in Ohmically heated tokamak discharges to rapid edge cooling due to trace impurity injection is studied. Results are presented for the Institute for Fusion Studies—Princeton Plasma Physics Laboratory (IFS/PPPL), gyro-Landau-fluid (GLF23), Multi-mode (MM), and the Itoh-Itoh-Fukuyama (IIF) transport models with an emphasis on results from the Texas Experimental Tokamak (TEXT) [K. W. Gentle, Nucl. Technol./Fusion 1, 479 (1981)]. It is found that critical gradient models containing a strong ion and electron temperature ratio dependence can exhibit behavior that is qualitatively consistent with experimental observation while depending solely on local parameters. The IFS/PPPL model yields the strongest response and demonstrates both rapid radial pulse propagation and a noticeable increase in the central electron temperature following a cold edge temperature pulse (amplitude reversal). Furthermore, the amplitude reversal effect is predicted to diminish with increasing electron density and auxiliary heating in agreement with experimental data. An Ohmic pulse heating effect due to rearrangement of the current profile is shown to contribute to the rise in the core electron temperature in TEXT, but not in the Joint European Tokamak (JET) [A. Tanga and the JET Team, in Plasma Physics and Controlled Nuclear Fusion Research 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. 1, p. 65] and the Tokamak Fusion Test Reactor (TFTR) [R. J. Hawryluk, V. Arunsalam, M. G. Bell et al., in Plasma Physics and Controlled Nuclear Fusion Research 1986 (International Atomic Energy Agency, Vienna, 1987), Vol. 1, p. 51]. While this phenomenon is not necessarily a unique signature of a critical gradient, there is sufficient evidence suggesting that the apparent plasma response to edge cooling may not require any underlying nonlocal mechanism and may be explained within the context of the intrinsic properties of electrostatic drift wave-based models.

ZnO nanorods/graphene/Ni/Au hybrid structures as transparent conductive layer in GaN LED for low work voltage and high light extraction

NASA Astrophysics Data System (ADS)

Xu, Kun; Xie, Yiyang; Ma, Huali; Du, Yinxiao; Zeng, Fanguang; Ding, Pei; Gao, Zhiyuan; Xu, Chen; Sun, Jie

2016-12-01

In this paper, by virtue of one-dimensional ZnO nanorods and two-dimensional graphene film hybrid structures, both the enhanced current spreading and enhanced light extraction were realized at the same time. A 1 nm/1 nm Ni/Au layer was used as an interlayer between graphene and pGaN to form ohmic contact, which makes the device have a good forward conduction properties. Through the comparison of the two groups of making ZnO nanorods or not, it was found that the 30% light extraction efficiency of the device was improved by using the ZnO nanorods. By analysis key parameters of two groups such as the turn-on voltage, work voltage and reverse leakage current, it was proved that the method for preparing surface nano structure by hydrothermal method self-organization growth ZnO nanorods applied in GaN LEDs has no influence to device's electrical properties. The hybrid structure application in GaN LED, make an achievement of a good ohmic contact, no use of ITO and enhancement of light extraction at the same time, meanwhile it does not change the device structure, introduce additional process, worsen the electrical properties.

Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru; Sheglov, D. V.; Latyshev, A. V.

A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

Passive MHD Spectroscopy for Enabling Magnetic Reconstructions on Spherical Tokamak Plasmas at General Fusion Inc

NASA Astrophysics Data System (ADS)

O'Shea, Peter; Laberge, Michel; Mossman, Alex; Reynolds, Meritt

2017-10-01

Magnetic reconstructions on lab based plasma injectors at General Fusion relies heavily on edge magnetic (``Bdot'') probes. On plasma experiments built for field compression (PCS) tests, the number and locations of Bdot probes is limited by mechanical constraints. Additional information about the q profiles near the core in our Spector plasmas is obtained using passive MHD spectroscopy. The coaxial helicity injection (CHI) formation process naturally generates hollow current profiles and reversed shear early in each discharge. Central Ohmic heating naturally peaks the current profiles as our plasmas evolve in time, simultaneously reducing the core safety factor, q(0), and reverse shear. As the central, non-monotonic q-profile crosses rational flux surfaces, we observe transient magnetic reconnection events (MRE's) due to the double tearing mode. Modal analysis allows us to infer the q surfaces involved in each burst. The parametric dependence of the timing of MRE's allows us to estimate the continuous time evolution of the core q profile. Combining core MHD spectroscopy with edge magnetic probe measurements greatly enhances our certainty of the overall q profile.

Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

PubMed Central

2011-01-01

Depositions on surfaces of semiconductor wafers of InP and GaN were performed from isooctane colloid solutions of palladium (Pd) nanoparticles (NPs) in AOT reverse micelles. Pd NPs in evaporated colloid and in layers deposited electrophoretically were monitored by SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank surfaces. Forward and reverse current-voltage characteristics of the diodes showed high rectification ratio and high Schottky barrier heights, giving evidence of very small Fermi level pinning. A large increase of current was observed after exposing diodes to flow of gas blend hydrogen in nitrogen. Current change ratio about 700,000 with 0.1% hydrogen blend was achieved, which is more than two orders-of-magnitude improvement over the best result reported previously. Hydrogen detection limit of the diodes was estimated at 1 ppm H2/N2. The diodes, besides this extremely high sensitivity, have been temporally stable and of inexpensive production. Relatively more expensive GaN diodes have potential for functionality at high temperatures. PMID:21831273

Vertical nanowire heterojunction devices based on a clean Si/Ge interface.

PubMed

Chen, Lin; Fung, Wayne Y; Lu, Wei

2013-01-01

Different vertical nanowire heterojunction devices were fabricated and tested based on vertical Ge nanowires grown epitaxially at low temperatures on (111) Si substrates with a sharp and clean Si/Ge interface. The nearly ideal Si/Ge heterojuctions with controlled and abrupt doping profiles were verified through material analysis and electrical characterizations. In the nSi/pGe heterojunction diode, an ideality factor of 1.16, subpicoampere reverse saturation current, and rectifying ratio of 10(6) were obtained, while the n+Si/p+Ge structure leads to Esaki tunnel diodes with a high peak tunneling current of 4.57 kA/cm(2) and negative differential resistance at room temperature. The large valence band discontinuity between the Ge and Si in the nanowire heterojunctions was further verified in the p+Si/pGe structure, which shows a rectifying behavior instead of an Ohmic contact and raises an important issue in making Ohmic contacts to heterogeneously integrated materials. A raised Si/Ge structure was further developed using a self-aligned etch process, allowing greater freedom in device design for applications such as the tunneling field-effect transistor (TFET). All measurement data can be well-explained and fitted with theoretical models with known bulk properties, suggesting that the Si/Ge nanowire system offers a very clean heterojunction interface with low defect density, and holds great potential as a platform for future high-density and high-performance electronics.

Extended Heat Deposition in Hot Jupiters: Application to Ohmic Heating

NASA Astrophysics Data System (ADS)

Ginzburg, Sivan; Sari, Re'em

2016-03-01

The observed radii of many giant exoplanets in close orbits exceed theoretical predictions. One suggested origin for this discrepancy is heat deposited deep inside the atmospheres of these “hot Jupiters”. Here, we study extended power sources that distribute heat from the photosphere to the deep interior of the planet. Our analytical treatment is a generalization of a previous analysis of localized “point sources”. We model the deposition profile as a power law in the optical depth and find that planetary cooling and contraction halt when the internal luminosity (I.e., cooling rate) of the planet drops below the heat deposited in the planet’s convective region. A slowdown in the evolutionary cooling prior to equilibrium is possible only for sources that do not extend to the planet’s center. We estimate the ohmic dissipation resulting from the interaction between the atmospheric winds and the planet’s magnetic field, and apply our analytical model to ohmically heated planets. Our model can account for the observed radii of most inflated planets, which have equilibrium temperatures of ≈1500-2500 K and are inflated to a radius of ≈ 1.6{R}J. However, some extremely inflated planets remain unexplained by our model. We also argue that ohmically inflated planets have already reached their equilibrium phase, and no longer contract. Following Wu & Lithwick, who argued that ohmic heating could only suspend and not reverse contraction, we calculate the time it takes ohmic heating to re-inflate a cold planet to its equilibrium configuration. We find that while it is possible to re-inflate a cold planet, the re-inflation timescales are longer by a factor of ≈ 30 than the cooling time.

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Zhu, Huichao; Ao, Jin-Ping

2016-03-01

An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10-9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs.

Ohmic ignition with high engineering beta based on the RFP

NASA Astrophysics Data System (ADS)

Sarff, J. S.; Anderson, J. K.; Chapman, B. E.; McCollam, K. J.

2017-10-01

The RFP configuration allows the possibility of ohmic ignition for fusion energy, eliminating the need for auxiliary heating by rf or neutral beam injection. Complex plasma-facing antennas and NBI sources are therefore not required, simplifying the difficult fusion materials challenge. While all toroidal configurations require a volume-average 〈 B 〉 >= 5 T, the field strength at the magnet in the RFP is only Bcoil 3T since plasma current generates almost all of the field. Engineering beta is therefore maximized. We summarize access to ohmic ignition by examining a Lawson-like power balance for an RFP fusion plasma comparable to the ARIES-AT advanced tokamak, which generates neutron wall loading Pn / A 5 MW/m2. The required energy confinement for ohmic ignition in an RFP is similar to that for a tokamak. Confinement in MST is comparable to a same-size, same-field tokamak plasma, but 〈 B 〉 in MST is only 1/20th that required for fusion. While transport could ultimately be dominated by micro turbulence, extrapolation of stochastic transport using Lundquist number scaling for MHD tearing indicates standard RFP confinement (not enhanced by current profile control) could be sufficient to access ohmic ignition. This bolsters the possibility for steady-state inductive sustainment using oscillating field current drive. The high beta and classical energetic ion confinement measured in MST also bolster the RFP's fusion potential. Work supported by U.S. DoE.

A Simple and Reliable Setup for Monitoring Corrosion Rate of Steel Rebars in Concrete

PubMed Central

Jibran, Mohammed Abdul Azeem; Azad, Abul Kalam

2014-01-01

The accuracy in the measurement of the rate of corrosion of steel in concrete depends on many factors. The high resistivity of concrete makes the polarization data erroneous due to the Ohmic drop. The other source of error is the use of an arbitrarily assumed value of the Stern-Geary constant for calculating corrosion current density. This paper presents the outcomes of a research work conducted to develop a reliable and low-cost experimental setup and a simple calculation procedure that can be utilised to calculate the corrosion current density considering the Ohmic drop compensation and the actual value of the Stern-Geary constants calculated using the polarization data. The measurements conducted on specimens corroded to different levels indicate the usefulness of the developed setup to determine the corrosion current density with and without Ohmic drop compensation. PMID:24526907

Ohmic heating pretreatment of algal slurry for production of biodiesel.

PubMed

Yodsuwan, Natthawut; Kamonpatana, Pitiya; Chisti, Yusuf; Sirisansaneeyakul, Sarote

2018-02-10

Suspensions of the model microalga Chlorella sp. TISTR 8990 were pretreated by ohmic heating to facilitate release of lipids from the cells in subsequent extraction and lipase-mediated transesterification to biodiesel. After ohmic pretreatment, the moist biomass was suspended in a system of water, hexane, methanol and immobilized lipase for extraction of lipids and simultaneous conversion to biodiesel. The ohmic pretreatment was optimized using an experimental design based on Taguchi method to provide treated biomass that maximized the biodiesel yield in subsequent extraction-transesterification operation. The experimental factors were the frequency of electric current (5-10 5  Hz), the processing temperature (50-70 °C), the algal biomass concentration in the slurry (algal fresh weight to water mass ratio of 1-3) and the incubation time (1-3 min). Extraction-transesterification of the pretreated biomass was carried out at 40 °C for 24 h using a reaction systems of a fixed composition (i.e. biomass, hexane, methanol, water and immobilized enzyme). Compared to control (i.e. untreated biomass), the ohmic pretreatment under optimal conditions (5 Hz current frequency, 70 °C, 1:2 mass ratio of biomass to water, incubation time of 2-min) increased the rate of subsequent transesterification by nearly 2-fold. Copyright © 2017 Elsevier B.V. All rights reserved.

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

PubMed

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to < 10 A cm(-2) for a large electrode (an area of approximately 60 000 microm(2)). However, the local current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric

2016-10-17

Here, atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell inline images equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing themore » Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.« less

Comparison of equilibrium ohmic and nonequilibrium swarm models for monitoring conduction electron evolution in high-altitude EMP calculations

NASA Astrophysics Data System (ADS)

Pusateri, Elise N.; Morris, Heidi E.; Nelson, Eric; Ji, Wei

2016-10-01

Atmospheric electromagnetic pulse (EMP) events are important physical phenomena that occur through both man-made and natural processes. Radiation-induced currents and voltages in EMP can couple with electrical systems, such as those found in satellites, and cause significant damage. Due to the disruptive nature of EMP, it is important to accurately predict EMP evolution and propagation with computational models. CHAP-LA (Compton High Altitude Pulse-Los Alamos) is a state-of-the-art EMP code that solves Maxwell's equations for gamma source-induced electromagnetic fields in the atmosphere. In EMP, low-energy, conduction electrons constitute a conduction current that limits the EMP by opposing the Compton current. CHAP-LA calculates the conduction current using an equilibrium ohmic model. The equilibrium model works well at low altitudes, where the electron energy equilibration time is short compared to the rise time or duration of the EMP. At high altitudes, the equilibration time increases beyond the EMP rise time and the predicted equilibrium ionization rate becomes very large. The ohmic model predicts an unphysically large production of conduction electrons which prematurely and abruptly shorts the EMP in the simulation code. An electron swarm model, which implicitly accounts for the time evolution of the conduction electron energy distribution, can be used to overcome the limitations exhibited by the equilibrium ohmic model. We have developed and validated an electron swarm model previously in Pusateri et al. (2015). Here we demonstrate EMP damping behavior caused by the ohmic model at high altitudes and show improvements on high-altitude, upward EMP modeling obtained by integrating a swarm model into CHAP-LA.

Numerical study for peristalsis of Carreau-Yasuda nanomaterial with convective and zero mass flux condition

NASA Astrophysics Data System (ADS)

Hayat, T.; Ahmed, Bilal; Alsaedi, A.; Abbasi, F. M.

2018-03-01

The present communication investigates flow of Carreau-Yasuda nanofluid in presence of mixed convection and Hall current. Effects of viscous dissipation, Ohmic heating and convective conditions are addressed. In addition zero nanoparticle mass flux condition is imposed. Wave frame analysis is carried out. Coupled differential systems after long wavelength and low Reynolds number are numerically solved. Effects of different parameters on velocity, temperature and concentration are studied. Heat and mass transfer rates are analyzed through tabular values. It is observed that concentration for thermophoresis and Brownian motion parameters has opposite effect. Further heat and mass transfer rates at the upper wall enhances significantly when Hartman number increases and reverse situation is noticed for Hall parameter.

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

PubMed

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs.

PubMed

Liu, Xingtong; Zhou, Shengjun; Gao, Yilin; Hu, Hongpo; Liu, Yingce; Gui, Chengqun; Liu, Sheng

2017-12-01

We demonstrate a GaN-based flip-chip LED (FC-LED) with a highly reflective indium-tin oxide (ITO)/distributed Bragg reflector (DBR) ohmic contact. A transparent ITO current spreading layer combined with Ta 2 O 5 /SiO 2 double DBR stacks is used as a reflective p-type ohmic contact in the FC-LED. We develop a strip-shaped SiO 2 current blocking layer, which is well aligned with a p-electrode, to prevent the current from crowding around the p-electrode. Our combined numerical simulation and experimental results revealed that the FC-LED with ITO/DBR has advantages of better current spreading and superior heat dissipation performance compared to top-emitting LEDs (TE-LEDs). As a result, the light output power (LOP) of the FC-LED with ITO/DBR was 7.6% higher than that of the TE-LED at 150 mA, and the light output saturation current was shifted from 130.9  A/cm 2 for the TE-LED to 273.8  A/cm 2 for the FC-LED with ITO/DBR. Owing to the high reflectance of the ITO/DBR ohmic contact, the LOP of the FC-LED with ITO/DBR was 13.0% higher than that of a conventional FC-LED with Ni/Ag at 150 mA. However, because of the better heat dissipation of the Ni/Ag ohmic contact, the conventional FC-LED with Ni/Ag exhibited higher light output saturation current compared to the FC-LED with ITO/DBR.

Contact effects in light activated GaAs switches

NASA Astrophysics Data System (ADS)

Durkin, P. S.

1985-05-01

The purpose of this work was to examine the effects of various types of contacts on the switching behavior of a light-triggered power switch. The switch was constructed from a homogeneous wafer of chromium-doped gallium arsenide; the contacts were either ohmic, non-ohmic, or Schottky barriers. These were formed on the wafer in two geometries; both contacts on one side, and one contact spacings were used to permit the effects of the location of the existing laser pulse to be studied. A high voltage power supply (zero to 20 kV) was employed as the bias supply. A Nd:YAG laser, in the pulsed mode, was used to trigger the switch, which was mounted on a cold finger cooled to near liquid nitrogen temperature. Cooling reduced the dark current to manageable values (less than 1 micro A), and also reduced the avalanche breakdown voltage. The results of the measurements indicate that ohmic contacts produced more reliable switching than the non-ohmic or Schottky contacts, in as much as the shape of the output current pulse was better, and the number of pulses which the switches could sustain before the pulse shape deteriorated was greater, for the ohmic contacts. Surface discharge between the one-sided contacts obscured any differences in switching characteristics which might have depended on the location of the pulsed light excitation, so that no correlation between position and behavior could be obtained.

Degradation of (La(0.8)Sr(0.2))(0.98)MnO(3-δ)-Zr(0.84)Y(0.16)O(2-γ) composite electrodes during reversing current operation.

PubMed

Hughes, Gareth A; Railsback, Justin G; Yakal-Kremski, Kyle J; Butts, Danielle M; Barnett, Scott A

2015-01-01

Reversing-current operation of solid oxide cell (La(0.8)Sr(0.2))(0.98)MnO(3-δ)-Zr(0.84)Y(0.16)O(2-γ) (LSM-YSZ) oxygen electrodes is described. Degradation was characterized by impedance spectroscopy in symmetric cells tested at 800 °C in air with a symmetric current cycle with a period of 12 hours. No change in cell resistance could be detected, in 1000 h tests with a sensitivity of ∼1% per kh, at a current density of 0.5 A cm(-2) corresponding to an overpotential of 0.18 V. At a current density to 0.6 A cm(-2) (0.33 V overpotential) measurable resistance degradation at a rate of 3% per kh was observed, while higher current/overpotential values led to faster degradation. Degradation was observed mainly in the ohmic resistance for current densities of 0.6, 0.8 and 0.9 A cm(-2), with little change in the polarization resistance. Polarization degradation, mainly observed at higher current density, was present as an increase in an impedance response at ∼30 kHz, apparently associated with the resistance of YSZ grain boundaries within the electrode. Microstructural and chemical analysis showed significant changes in electrode structure after the current cycling, including an increase in LSM particle size and a reduction in the amount of YSZ and LSM at the electrode/electrolyte interface - the latter presumably a precursor to delamination.

Remarks on the thermal stability of an Ohmic-heated nanowire

NASA Astrophysics Data System (ADS)

Timsit, Roland S.

2018-05-01

The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

Spin caloritronic nano-oscillator

DOE PAGES

Safranski, C.; Barsukov, I.; Lee, H. K.; ...

2017-07-18

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Spin caloritronic nano-oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Safranski, C.; Barsukov, I.; Lee, H. K.

Energy loss due to ohmic heating is a major bottleneck limiting down-scaling and speed of nano-electronic devices, and harvesting ohmic heat for signal processing is a major challenge in modern electronics. Here, we demonstrate that thermal gradients arising from ohmic heating can be utilized for excitation of coherent auto-oscillations of magnetization and for generation of tunable microwave signals. The heat-driven dynamics is observed in Y 3Fe 5O 12/Pt bilayer nanowires where ohmic heating of the Pt layer results in injection of pure spin current into the Y 3Fe 5O 12 layer. This leads to excitation of auto-oscillations of the Ymore » 3Fe 5O 12 magnetization and generation of coherent microwave radiation. Thus, our work paves the way towards spin caloritronic devices for microwave and magnonic applications.« less

Analysis of plasma termination in the JET hybrid scenario

NASA Astrophysics Data System (ADS)

Hobirk, J.; Bernert, M.; Buratti, P.; Challis, C. D.; Coffey, I.; Drewelow, P.; Joffrin, E.; Mailloux, J.; Nunes, I.; Pucella, G.; Pütterich, T.; de Vries, P. C.; Contributors, JET

2018-07-01

This paper analyses the final phase of hybrid scenario discharges at JET, the reduction of auxiliary heating towards finally the Ohmic phase. The here considered Ohmic phase is mostly still in the current flattop but may also be in the current ramp down. For this purpose a database is created of 54 parameters in 7 phases distributed in time of the discharge. It is found that the occurrence of a locked mode is in most cases preceded by a radiation peaking after the main heating phase either in a low power phase and/or in the Ohmic phase. To gain insight on the importance of different parameters in this process a correlation analysis to the radiation peaking in the Ohmic phase is done. The first finding is that the further away in time the analysed phases are the less the correlation is. This means in the end that a good termination scenario might also be able to terminate unhealthy plasmas safely. The second finding is that remaining impurities in the plasma after reducing the heating power in the termination phase are the most important reason for generating a locked mode which can lead to a disruption.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

REACTOR

DOEpatents

Spitzer, L. Jr.

1962-01-01

The system conteraplates ohmically heating a gas to high temperatures such as are useful in thermonuclear reactors of the stellarator class. To this end the gas is ionized and an electric current is applied to the ionized gas ohmically to heat the gas while the ionized gas is confined to a central portion of a reaction chamber. Additionally, means are provided for pumping impurities from the gas and for further heating the gas. (AEC)

The Experiment of Modulated Toroidal Current on HT-7 and HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Mao, Jian-shan; P, Phillips; Luo, Jia-rong; Xu, Yu-hong; Zhao, Jun-yu; Zhang, Xian-mei; Wan, Bao-nian; Zhang, Shou-yin; Jie, Yin-xian; Wu, Zhen-wei; Hu, Li-qun; Liu, Sheng-xia; Shi, Yue-jiang; Li, Jian-gang; HT-6M; HT-7 Group

2003-02-01

The Experiments of Modulated Toroidal Current were done on the HT-6M tokamak and HT-7 superconducting tokamak. The toroidal current was modulated by programming the Ohmic heating field. Modulation of the plasma current has been used successfully to suppress MHD activity in discharges near the density limit where large MHD m = 2 tearing modes were suppressed by sufficiently large plasma current oscillations. The improved Ohmic confinement phase was observed during modulating toroidal current (MTC) on the Hefei Tokamak-6M (HT-6M) and Hefei superconducting Tokamak-7 (HT-7). A toroidal frequency-modulated current, induced by a modulated loop voltage, was added on the plasma equilibrium current. The ratio of A.C. amplitude of plasma current to the main plasma current ΔIp/Ip is about 12%-30%. The different formats of the frequency-modulated toroidal current were compared.

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC P-N Junction Diodes Grown on Step-Free 4H-SiC

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Trunek, Andrew J.

2005-01-01

This paper reports on initial fabrication and electrical characterization of 3C-SiC p-n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from approx. 2 x 10(exp 16)/cu cm to approx.. 5 x 10(exp 17)/cu cm were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/sq cm for more than 20 hours resulted in less than 50 mV change in approx. 3 V forward voltage. 3C-SiC, pn junction, p+n diode, rectifier, reverse breakdown, breakdown field,heteroepitaxy, epitaxial growth, electroluminescence, mesa, bipolar diode

Parasitic Currents Caused by Different Ionic and Electronic Conductivities in Fuel Cell Anodes.

PubMed

Schalenbach, Maximilian; Zillgitt, Marcel; Maier, Wiebke; Stolten, Detlef

2015-07-29

The electrodes in fuel cells simultaneously realize electric and ionic conductivity. In the case of acidic polymer electrolytes, the electrodes are typically made of composites of carbon-supported catalyst and Nafion polymer electrolyte binder. In this study, the interaction of the proton conduction, the electron conduction, and the electrochemical hydrogen conversion in such composite electrode materials was examined. Exposed to a hydrogen atmosphere, these composites displayed up to 10-fold smaller resistivities for the proton conduction than that of Nafion membranes. This effect was ascribed to the simultaneously occurring electrochemical hydrogen oxidation and evolution inside the composite samples, which are driven by different proton and electron resistivities. The parasitic electrochemical currents resulting were postulated to occur in the anode of fuel cells with polymer, solid oxide, or liquid alkaline electrolytes, when the ohmic drop of the ion conduction in the anode is higher with the anodic kinetic overvoltage (as illustrated in the graphical abstract). In this case, the parasitic electrochemical currents increase the anodic kinetic overpotential and the ohmic drop in the anode. Thinner fuel cell anodes with smaller ohmic drops for the ion conduction may reduce the parasitic electrochemical currents.

Suppression of surface segregation of the phosphorous δ-doping layer by insertion of an ultra-thin silicon layer for ultra-shallow Ohmic contacts on n-type germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, Michihiro; Uematsu, Masashi; Itoh, Kohei M., E-mail: kitoh@appi.keio.ac.jp

2015-09-28

We demonstrate the formation of abrupt phosphorus (P) δ-doping profiles in germanium (Ge) by the insertion of ultra-thin silicon (Si) layers. The Si layers at the δ-doping region significantly suppress the surface segregation of P during the molecular beam epitaxial growth of Ge and high-concentration active P donors are confined within a few nm of the initial doping position. The current-voltage characteristics of the P δ-doped layers with Si insertion show excellent Ohmic behaviors with low enough resistivity for ultra-shallow Ohmic contacts on n-type Ge.

Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn

NASA Astrophysics Data System (ADS)

Zhang, Xu; Zhang, Dongliang; Zheng, Jun; Liu, Zhi; He, Chao; Xue, Chunlai; Zhang, Guangze; Li, Chuanbo; Cheng, Buwen; Wang, Qiming

2015-12-01

In this study, a Ni/Al Ohmic contact on a highly doped n-type GeSn has been investigated. A specific contact resistivity as low as (2.26 ± 0.11) × 10-4 Ω cm2 was obtained with the GeSn sample annealed at a temperature of 450 °C for 30 s. The linear Ohmic behavior was attributed to the low resistance of the Ni(GeSn) phase; this behavior was determined using glancing-angle X-ray diffraction, and the quantum tunneling current through the Schottky barrier narrowed because of high doping; this phenomenon was confirmed from the contact resistance characteristics at different temperatures from 45 to 205 K.

Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

NASA Astrophysics Data System (ADS)

Jeong, Seonghoon; Lee, Sung-Nam; Kim, Hyunsoo

2018-01-01

The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/ p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10-3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

Plasma current start-up by the outer ohmic heating coils in the Saskatchewan TORus Modified (STOR-M) iron core tokamak

DOE PAGES

Mitarai, O.; Xiao, C.; McColl, D.; ...

2015-03-24

A plasma current up to 15 kA has been driven with outer ohmic heating (OH) coils in the STOR-M iron core tokamak. Even when the inner OH coil is disconnected, the outer OH coils alone can induce the plasma current as primary windings and initial breakdown are even easier in this coil layout. Our results suggest a possibility to use an iron core in a spherical tokamak to start up the plasma current without a central solenoid. Finally, the effect of the iron core saturation on the extension of the discharge pulse length has been estimated for further experiments inmore » the STOR-M tokamak.« less

Plasma current start-up by the outer ohmic heating coils in the Saskatchewan TORus Modified (STOR-M) iron core tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitarai, O.; Xiao, C.; McColl, D.

A plasma current up to 15 kA has been driven with outer ohmic heating (OH) coils in the STOR-M iron core tokamak. Even when the inner OH coil is disconnected, the outer OH coils alone can induce the plasma current as primary windings and initial breakdown are even easier in this coil layout. Our results suggest a possibility to use an iron core in a spherical tokamak to start up the plasma current without a central solenoid. Finally, the effect of the iron core saturation on the extension of the discharge pulse length has been estimated for further experiments inmore » the STOR-M tokamak.« less

Semiconductor-to-metal transition in rutile TiO 2 induced by tensile strain

DOE PAGES

Benson, Eric E.; Miller, Elisa M.; Nanayakkara, Sanjini U.; ...

2017-02-10

Here, we report the first observation of a reversible, degenerate doping of titanium dioxide with strain, which is referred to as a semiconductor-to-metal transition. Application of tensile strain to a ~50 nm film of rutile TiO 2 thermally grown on a superelastic nitinol (NiTi intermetallic) substrate causes reversible degenerate doping as evidenced by electrochemistry, X-ray photoelectron spectroscopy (XPS), and conducting atomic force microscopy (CAFM). Cyclic voltammetry and impedance measurements show behavior characteristic of a highly doped n-type semiconductor for unstrained TiO 2 transitioning to metallic behavior under tensile strain. The transition reverses when strain is removed. Valence band XPS spectramore » show that samples strained to 5% exhibit metallic-like intensity near the Fermi level. Strain also induces a distinct transition in CAFM current-voltage curves from rectifying (typical of an n-type semiconductor) to ohmic (metal-like) behavior. We propose that strain raises the energy distribution of oxygen vacancies ( n-type dopants) near the conduction band and causes an increase in carrier concentration. As the carrier concentration is increased, the width of the depletion region is reduced, which then permits electron tunneling through the space charge barrier resulting in the observed metallic behavior.« less

Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

PubMed

Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

2016-04-01

The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

The influence of current neutralization and multiple Coulomb scattering on the spatial dynamics of resistive sausage instability of a relativistic electron beam propagating in ohmic plasma

NASA Astrophysics Data System (ADS)

Kolesnikov, E. K.; Manuilov, A. S.; Petrov, V. S.; Klyushnikov, G. N.; Chernov, S. V.

2017-06-01

The influence of the current neutralization process, the phase mixing of the trajectories of electrons and multiple Coulomb scattering of electrons beam on the atoms of the background medium on the spatial increment of the growth of sausage instability of a relativistic electron beam propagating in ohmic plasma channel has been considered. It has been shown that the amplification of the current neutralization leads to a significant increase in this instability, and phase mixing and the process of multiple scattering of electrons beam on the atoms of the background medium are the stabilizing factor.

Planar doped barrier subharmonic mixers

NASA Technical Reports Server (NTRS)

Lee, T. H.; East, J. R.; Haddad, G. I.

1992-01-01

The Planar Doped Barrier (PDB) diode is a device consisting of a p(+) doping spike between two intrinsic layers and n(+) ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic mixers. We have fabricated such devices with barrier heights of 0.3, 0.5 and 0.7 volts from GaAs and InGaAs using a multijunction honeycomb structure with junction diameters between one and ten microns. Initial RF measurements are encouraging. The 0.7 volt barrier height 4 micron GaAs devices were tested as subharmonic mixers at 202 GHz with an IF frequency of 1 GHz and had 18 dB of conversion loss. The estimated mismatch loss was 7 dB and was due to higher diode capacitance. The LO frequency was 100.5 GHz and the pump power was 8 mW.

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

NASA Astrophysics Data System (ADS)

Frazzetto, Alessia; Giannazzo, Filippo; Lo Nigro, Raffaella; di Franco, Salvatore; Bongiorno, Corrado; Saggio, Mario; Zanetti, Edoardo; Raineri, Vito; Roccaforte, Fabrizio

2011-12-01

This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700°C with or without a protective capping layer, and of the ohmic contacts were studied using atomic force microscopy [AFM], transmission line model measurements and local current measurements performed with conductive AFM. The characteristics of the contacts were significantly affected by the roughness of the underlying SiC. In particular, the surface roughness of the Al-implanted SiC regions annealed at 1700°C could be strongly reduced using a protective carbon capping layer during annealing. This latter resulted in an improved surface morphology and specific contact resistance of the Ti/Al ohmic contacts formed on these regions. The microstructure of the contacts was monitored by X-ray diffraction analysis and a cross-sectional transmission electron microscopy, and correlated with the electrical results.

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

NASA Technical Reports Server (NTRS)

Lieneweg, Udo; Hannaman, David J.

1987-01-01

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Interface observation in Au/Ni/p-GaN studied by HREM and energy-filtering TEM.

PubMed

Lim, Sung-Hwan; Ra, Tae-Yeub; Kim, Won-Yong

2003-01-01

The contact resistance of Au/Ni/p-GaN ohmic contacts for different annealing conditions was measured. This was then correlated with microstructure, including phase distribution, observed by high-resolution electron microscopy combined with energy-filtering imaging. A contact resistance of 2.22 x 10(-4) ohms cm2 for Au/Ni contacts to p-GaN after annealing at 500 degrees C for 5 min in air ambient was obtained. NiO layers were identified at the interface and upper area of annealed Ni/Au/p-GaN for air ambient. In addition, an Au layer was found at the interface of p-GaN due to a reversal reaction during annealing. Identification of the observed phases is discussed, along with possible formation mechanisms for the ohmic contacts in the Au/Ni/p-GaN system.

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

NASA Astrophysics Data System (ADS)

Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.

2004-02-01

We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.

Experiments and Simulations of ITER-like Plasmas in Alcator C-Mod

DOE Office of Scientific and Technical Information (OSTI.GOV)

.R. Wilson, C.E. Kessel, S. Wolfe, I.H. Hutchinson, P. Bonoli, C. Fiore, A.E. Hubbard, J. Hughes, Y. Lin, Y. Ma, D. Mikkelsen, M. Reinke, S. Scott, A.C.C. Sips, S. Wukitch and the C-Mod Team

Alcator C-Mod is performing ITER-like experiments to benchmark and verify projections to 15 MA ELMy H-mode Inductive ITER discharges. The main focus has been on the transient ramp phases. The plasma current in C-Mod is 1.3 MA and toroidal field is 5.4 T. Both Ohmic and ion cyclotron (ICRF) heated discharges are examined. Plasma current rampup experiments have demonstrated that (ICRF and LH) heating in the rise phase can save voltseconds (V-s), as was predicted for ITER by simulations, but showed that the ICRF had no effect on the current profile versus Ohmic discharges. Rampdown experiments show an overcurrent inmore » the Ohmic coil (OH) at the H to L transition, which can be mitigated by remaining in H-mode into the rampdown. Experiments have shown that when the EDA H-mode is preserved well into the rampdown phase, the density and temperature pedestal heights decrease during the plasma current rampdown. Simulations of the full C-Mod discharges have been done with the Tokamak Simulation Code (TSC) and the Coppi-Tang energy transport model is used with modified settings to provide the best fit to the experimental electron temperature profile. Other transport models have been examined also. __________________________________________________« less

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

On electrical and interfacial properties of iron and platinum Schottky barrier diodes on (111) n-type Si0.65Ge0.35

NASA Astrophysics Data System (ADS)

Hamri, D.; Teffahi, A.; Djeghlouf, A.; Chalabi, D.; Saidane, A.

2018-04-01

Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) characteristics of Molecular Beam Epitaxy (MBE)-deposited Fe/n-Si0.65Ge0.35 (FM1) and Pt/n-Si0.65Ge0.35(PM2) (111) orientated Schottky barrier diodes (SBDs) have been investigated at room-temperature. Barrier height (ΦB0), ideality factor (n) and series resistance (RS) were extracted. Dominant current conduction mechanisms were determined. They revealed that Poole-Frenkel-type conduction mechanism dominated reverse current. Differences in shunt resistance confirmed the difference found in leakage current. Under forward bias, quasi-ohmic conduction is found at low voltage regions and space charge-limited conduction (SCLC) at higher voltage regions for both SBDs. Density of interface states (NSS) indicated a difference in interface reactivity. Distribution profiles of series resistance (RS) with bias gives a peak in depletion region at low-frequencies that disappears with increasing frequencies. These results show that interface states density and series resistance of Schottky diodes are important parameters that strongly influence electrical properties of FM1 and PM2 structures.

Resistive tearing instability in electron MHD: application to neutron star crusts

NASA Astrophysics Data System (ADS)

Gourgouliatos, Konstantinos N.; Hollerbach, Rainer

2016-12-01

We study a resistive tearing instability developing in a system evolving through the combined effect of Hall drift in the electron magnetohydrodynamic limit and Ohmic dissipation. We explore first the exponential growth of the instability in the linear case and we find the fastest growing mode, the corresponding eigenvalues and dispersion relation. The instability growth rate scales as γ ∝ B2/3σ-1/3, where B is the magnetic field and σ the electrical conductivity. We confirm the development of the tearing resistive instability in the fully non-linear case, in a plane-parallel configuration where the magnetic field polarity reverses, through simulations of systems initiating in Hall equilibrium with some superimposed perturbation. Following a transient phase, during which there is some minor rearrangement of the magnetic field, the perturbation grows exponentially. Once the instability is fully developed, the magnetic field forms the characteristic islands and X-type reconnection points, where Ohmic decay is enhanced. We discuss the implications of this instability for the local magnetic field evolution in neutron stars' crusts, proposing that it can contribute to heating near the surface of the star, as suggested by models of magnetar post-burst cooling. In particular, we find that a current sheet a few metres thick, covering as little as 1 per cent of the total surface, can provide 1042 erg in thermal energy within a few days. We briefly discuss applications of this instability in other systems where the Hall effect operates such as protoplanetary discs and space plasmas.

A unified model of density limit in fusion plasmas

NASA Astrophysics Data System (ADS)

Zanca, P.; Sattin, F.; Escande, D. F.; Pucella, G.; Tudisco, O.

2017-05-01

In this work we identify by analytical and numerical means the conditions for the existence of a magnetic and thermal equilibrium of a cylindrical plasma, in the presence of Ohmic and/or additional power sources, heat conduction and radiation losses by light impurities. The boundary defining the solutions’ space having realistic temperature profile with small edge value takes mathematically the form of a density limit (DL). Compared to previous similar analyses the present work benefits from dealing with a more accurate set of equations. This refinement is elementary, but decisive, since it discloses a tenuous dependence of the DL on the thermal transport for configurations with an applied electric field. Thanks to this property, the DL scaling law is recovered almost identical for two largely different devices such as the ohmic tokamak and the reversed field pinch. In particular, they have in common a Greenwald scaling, linearly depending on the plasma current, quantitatively consistent with experimental results. In the tokamak case the DL dependence on any additional heating approximately follows a 0.5 power law, which is compatible with L-mode experiments. For a purely externally heated configuration, taken as a cylindrical approximation of the stellarator, the DL dependence on transport is found stronger. By adopting suitable transport models, DL takes on a Sudo-like form, in fair agreement with LHD experiments. Overall, the model provides a good zeroth-order quantitative description of the DL, applicable to widely different configurations.

Interface state density of free-standing GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Faraz, S. M.; Ashraf, H.; Imran Arshad, M.; Hageman, P. R.; Asghar, M.; Wahab, Q.

2010-09-01

Schottky diodes were fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types. Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au, respectively. The Schottky diode fabricated on n-GaN exhibited double barriers with values of 0.9 and 0.6 eV and better performance in the rectification factor together with reverse and forward currents with an ideality factor of 1.8. The barrier height for the p-GaN Schottky diode is 0.6 eV with an ideality factor of 4.16. From the capacitance-voltage (C-V) measurement, the net doping concentration of n-GaN is 4 × 1017 cm-3, resulting in a lower reverse breakdown of around -12 V. The interface state density (NSS) as a function of EC-ESS is found to be in the range 4.23 × 1012-3.87 × 1011 eV-1 cm-2 (below the conduction band) from Ec-0.90 to EC-0.99. Possible reasons responsible for the low barrier height and high ideality factor have been addressed.

Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

NASA Astrophysics Data System (ADS)

de Moura, F. A. B. F.; Lyra, M. L.; de Almeida, M. L.; Ourique, G. S.; Fulco, U. L.; Albuquerque, E. L.

2016-10-01

We determine, by using a tight-binding model Hamiltonian, the characteristic current-voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation.

Performance of a vanadium redox flow battery with tubular cell design

NASA Astrophysics Data System (ADS)

Ressel, Simon; Laube, Armin; Fischer, Simon; Chica, Antonio; Flower, Thomas; Struckmann, Thorsten

2017-07-01

We present a vanadium redox flow battery with a tubular cell design which shall lead to a reduction of cell manufacturing costs and the realization of cell stacks with reduced shunt current losses. Charge/discharge cycling and polarization curve measurements are performed to characterize the single test cell performance. A maximum current density of 70 mAcm-2 and power density of 142 Wl-1 (per cell volume) is achieved and Ohmic overpotential is identified as the dominant portion of the total cell overpotential. Cycling displays Coulomb efficiencies of ≈95% and energy efficiencies of ≈55%. During 113 h of operation a stable Ohmic cell resistance is observed.

A titanium hydride gun for plasma injection into the T2-reversed field pinch device

NASA Astrophysics Data System (ADS)

Voronin, A. V.; Hellblom, K. G.

1999-02-01

A study of a plasma gun (modified Bostic type) with titanium hydride electrodes has been carried out. The total number of released hydrogen atoms was in the range 1016-1018 and the maximum plasma flow velocity was 2.5×105 m s-1. The ion density near the gun edge reached 1.8×1020 m-3 and the electron temperature was around 40 eV as estimated from probe measurements. No species other than hydrogen or titanium were seen in the plasma line radiation. The plasma injector was successfully used for gas pre-ionization in the Extrap T2 reversed-field pinch device (ohmic heating toroidal experiment (OHTE)).

Improved Density Control in the Pegasus Toroidal Experiment using Internal Fueling

NASA Astrophysics Data System (ADS)

Thome, K. E.; Bongard, M. W.; Cole, J. A.; Fonck, R. J.; Redd, A. J.; Winz, G. R.

2012-10-01

Routine density control up to and exceeding the Greenwald limit is critical to key Pegasus operational scenarios, including non-solenoidal startup plasmas created using single-point helicity injection and high β Ohmic plasmas. Confinement scalings suggest it is possible to achieve very high β plasmas in Pegasus by lowering the toroidal field and increasing ne/ng. In the past, Pegasus achieved β ˜ 20% in high recycling Ohmic plasmas without running into any operational boundaries.footnotetext Garstka, G.D. et al., Phys. Plasmas 10, 1705 (2003) However, recent Ohmic experiments have demonstrated that Pegasus currently operates in an extremely low-recycling regime with R < 0.8 and Zeff ˜ 1 using improved vacuum conditioning techniques, such as Ti gettering and cryogenic pumping. Hence, it is difficult to achieve ne/ng> 0.3 with these improved wall conditions. Presently, gas is injected using low-field side (LFS) modified PV-10 valves. To attain high ne/ng operation and coincidentally separate core plasma and local current source fueling two new gas fueling capabilities are under development. A centerstack capillary injection system has been commissioned and is undergoing initial tests. A LFS movable midplane needle gas injection system is currently under design and will reach r/a ˜ 0.25. Initial results from both systems will be presented.

Organic-inorganic Au/PVP/ZnO/Si/Al semiconductor heterojunction characteristics

NASA Astrophysics Data System (ADS)

Mokhtari, H.; Benhaliliba, M.

2017-11-01

The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction (HJ) diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone (PVP) layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted. Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity (n > 4). A high rectifying (~4.6 × 10 4) device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current (SCLC) conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.

Analysis of Rotation and Transport Data in C-Mod ITB Plasmas

NASA Astrophysics Data System (ADS)

Fiore, C. L.; Rice, J. E.; Reinke, M. L.; Podpaly, Y.; Bespamyatnov, I. O.; Rowan, W. L.

2009-11-01

Internal transport barriers (ITBs) spontaneously form near the half radius of Alcator C-Mod plasmas when the EDA H-mode is sustained for several energy confinement times in either off-axis ICRF heated discharges or in purely ohmic heated plasmas. These plasmas exhibit strongly peaked density and pressure profiles, static or peaking temperature profiles, peaking impurity density profiles, and thermal transport coefficients that approach neoclassical values in the core. It has long been observed that the intrinsic central plasma rotation that is strongly co-current following the H-mode transition slows and often reverses as the density peaks as the ITB forms. Recent spatial measurements demonstrate that the rotation profile develops a well in the core region that decreases continuously as central density rises while the value outside of the core remains strongly co-current. This results in the formation of a steep potential gradient/strong electric field at the location of the foot of the ITB density profile. The resulting E X B shearing rate is also quite significant at the foot. These analyses and the implications for plasma transport and stability will be presented.

Analytical models of Ohmic heating and conventional heating in food processing

NASA Astrophysics Data System (ADS)

Serventi, A.; Bozzoli, F.; Rainieri, S.

2017-11-01

Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

Ohmic Heating of an Electrically Conductive Food Package.

PubMed

Kanogchaipramot, Kanyawee; Tongkhao, Kullanart; Sajjaanantakul, Tanaboon; Kamonpatana, Pitiya

2016-12-01

Ohmic heating through an electrically conductive food package is a new approach to heat the food and its package as a whole after packing to avoid post-process contamination and to serve consumer needs for convenience. This process has been successfully completed using polymer film integrated with an electrically conductive film to form a conductive package. Orange juice packed in the conductive package surrounded with a conductive medium was pasteurized in an ohmic heater. A mathematical model was developed to simulate the temperature distribution within the package and its surroundings. A 3-D thermal-electric model showed heating uniformity inside the food package while the hot zone appeared in the orange juice adjacent to the conductive film. The accuracy of the model was determined by comparing the experimental results with the simulated temperature and current drawn; the model showed good agreement between the actual and simulated results. An inoculated pack study using Escherichia coli O157:H7 indicated negative growth of viable microorganisms at the target and over target lethal process temperatures, whereas the microorganism was present in the under target temperature treatment. Consequently, our developed ohmic heating system with conductive packaging offers potential for producing safe food. © 2016 Institute of Food Technologists®.

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

NASA Astrophysics Data System (ADS)

Guo, H.; Andagana, H. B.; Cao, X. A.

2010-05-01

Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg ~4 × 1019 cm-3) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10-2 Ω cm-2 range, but were more stable above 600°C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

A comprehensive study on rotation reversal in KSTAR: experimental observations and modelling

NASA Astrophysics Data System (ADS)

Na, D. H.; Na, Yong-Su; Angioni, C.; Yang, S. M.; Kwon, J. M.; Jhang, Hogun; Camenen, Y.; Lee, S. G.; Shi, Y. J.; Ko, W. H.; Lee, J. A.; Hahm, T. S.; KSTAR Team

2017-12-01

Dedicated experiments have been performed in KSTAR Ohmic plasmas to investigate the detailed physics of the rotation reversal phenomena. Here we adapt the more general definition of rotation reversal, a large change of the intrinsic toroidal rotation gradient produced by minor changes in the control parameters (Camenen et al 2017 Plasma Phys. Control. Fusion 59 034001), which is commonly observed in KSTAR regardless of the operating conditions. The two main phenomenological features of the rotation reversal are the normalized toroidal rotation gradient ({{u}\\prime} ) change in the gradient region and the existence of an anchor point. For the KSTAR Ohmic plasma database including the experiment results up to the 2016 experimental campaign, both features were investigated. First, the observations show that the locations of the gradient and the anchor point region are dependent on {{q}95} . Second, a strong dependence of {{u}\\prime} on {νeff} is clearly observed in the gradient region, whereas the dependence on R/{{L}{{Ti}}} , R/{{L}{{Te}}} , and R/{{L}{{ne}}} is unclear considering the usual variation of the normalized gradient length in KSTAR. The experimental observations were compared against several theoretical models. The rotation reversal might not occur due to the transition of the dominant turbulence from the trapped electron mode to the ion temperature gradient mode or the neoclassical equilibrium effect in KSTAR. Instead, it seems that the profile shearing effects associated with a finite ballooning tilting well reproduce the experimental observations of both the gradient region and the anchor point; the difference seems to be related to the magnetic shear and the q value. Further analysis implies that the increase of {{u}\\prime} in the gradient region with the increase of the collisionality would occur when the reduction of the momentum diffusivity is comparatively larger than the reduction of the residual stress. It is supported by the perturbative analysis of the experiments and the nonlinear gyrokinetic simulations. The absence of the sign change of {{u}\\prime} even when a much lower collisionality is produced by additional electron cyclotron heating brings further experimental support to this interpretation.

Mixed-state Hall effect of high-T(c) superconductors

NASA Astrophysics Data System (ADS)

Kang, Byeongwon

In this dissertation, we presented the study on the mixed-state Hall effect of high-Tc superconductors (HTSs). In order to understand the mechanisms of the puzzling phenomena in the mixed-state Hall effect of HTSs, the Hall sign anomaly and scaling behavior, Hall measurements are conducted in several HTS thin films. We investigate the mechanism of the sign reversal of the Hall resistivity in Tl-2201 films when the electronic band structure is varied through the underdoped, optimally doped, and overdoped regions. It is found that the Hall sign reversals are an intrinsic property of HTSs and determined by electronic band structure. Although pinning is not found to be the mechanism behind sign reversals, pinning can suppress the appearance of the Hall sign reversal. Therefore, it is concluded that two (or more) sign reversals are a generic behavior of HTSs. From a systematic study of the vortex phase diagram, we discover several new features of the vortex liquid. In the presence of pinning, the vortex-liquid phase can be divided into two regions, a glassy liquid (GL) where vortices remain correlated as manifested in non-Ohmic resistivity, and a regular liquid (RL) where resistivity becomes Ohmic as vortices become uncorrelated. The field dependence of the Hall angle is found to be linear in the RL and nonlinear in the GL. Generally the decoupling line (Hk- T), which is defined as a boundary between the GL and the RL, is lower than the depinning line (Hd-T). As pinning increases the Hk-T may approach the Hd-T, thus vortices are decoupled and depinned nearly simultaneously. For a weak pinning system, on the other hand, the Hk-T and the Hd-T are well separated so that single vortices remain pinned in the region Hk ≤ H ≥ Hd. The behavior of s xy is also investigated in the GL and the RL. In the GL s xy is observed to strongly depend on pinning due to the inter-vortex correlation whereas in the RL s xy is independent of pinning since the pinning effect is scaled out.

H-mode achievement and edge features in RFX-mod tokamak operation

NASA Astrophysics Data System (ADS)

Spolaore, M.; Cavazzana, R.; Marrelli, L.; Carraro, L.; Franz, P.; Spagnolo, S.; Zaniol, B.; Zuin, M.; Cordaro, L.; Dal Bello, S.; De Masi, G.; Ferro, A.; Finotti, C.; Grando, L.; Grenfell, G.; Innocente, P.; Kudlacek, O.; Marchiori, G.; Martines, E.; Momo, B.; Paccagnella, R.; Piovesan, P.; Piron, C.; Puiatti, M. E.; Recchia, M.; Scarin, P.; Taliercio, C.; Vianello, N.; Zanotto, L.

2017-11-01

The RFX-mod experiment is a fusion device designed to operate as a reversed field pinch (RFP), with a major radius R = 2 m and a minor radius a = 0.459 m. Its high versatility recently allowed operating it also as an ohmic tokamak, allowing comparative studies between the two configurations in the same device. The device is equipped with a state of the art MHD mode feedback control system providing a magnetic boundary effective control, by applying resonant or non-resonant magnetic perturbations (MP), both in RFP and in tokamak configurations. In the fusion community the application of MPs is widely studied as a promising tool to limit the impact of plasma filaments and ELMs (edge localized modes) on plasma facing components. An important new research line is the exploitation of the RFX-mod active control system for ELM mitigation studies. As a first step in this direction, this paper presents the most recent achievements in term of RFX-mod tokamak explored scenarios, which allowed the first investigation of the ohmic and edge biasing induced H-mode. The production of D-shaped tokamak discharges and the design and deployment of an insertable polarized electrode were accomplished. Reproducible H-mode phases were obtained with insertable electrode negative biasing in single null discharges, representing an unexplored scenario with this technique. Important modifications of the edge plasma density and flow properties are observed. During the achieved H-mode ELM-like electromagnetic composite filamentary structures are observed. They are characterized by clear vorticity and parallel current density patterns.

Traveling-wave induction launchers

NASA Technical Reports Server (NTRS)

Elliott, David G.

1989-01-01

An analysis of traveling-wave induction launchers shows that induction is a feasible method of producing armature current and that efficient accelerators can be built without sliding contacts or arcs. In a traveling-wave induction launcher the armature current is induced by a slip speed between the armature and a traveling magnetic field. At 9 m/s slip speed a 9 kg projectile with an aluminum armature weighing 25 percent of the total mass can be accelerated to 3000 m/s in a 5 m-long barrel with a total ohmic loss in the barrel coils and armature of 4 percent of the launch kinetic energy and with an average armature temperature rise of 220 deg C, but a peak excitation frequency of 8600 Hz is required. With a 2 kg launch mass the ohmic loss is 7 percent. A launcher system optimized for rotating generators would have a peak frequency of 4850 Hz; with an aluminum armature weighing 33 percent of the launch mass and a slip speed of 30 m/s the total ohmic loss in the generators, cables, and accelerator would be 43 percent of the launch kinetic energy, and the average armature temperature rise would be 510 deg C.

Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

PubMed

Lee, Tae Ho; Kim, Kyeong Heon; Lee, Byeong Ryong; Park, Ju Hyun; Schubert, E Fred; Kim, Tae Geun

2016-12-28

Nitride-based ultraviolet light-emitting diodes (UV LEDs) are promising replacements for conventional UV lamps. However, the external quantum efficiency of UV LEDs is much lower than for visible LEDs due to light absorption in the p-GaN contact and electrode layers, along with p-AlGaN growth and doping issues. To minimize such absorption, we should obtain direct ohmic contact to p-AlGaN using UV-transparent ohmic electrodes and not use p-GaN as a contact layer. Here, we propose a glass-based transparent conductive electrode (TCE) produced using electrical breakdown (EBD) of an AlN thin film, and we apply the thin film to four (Al)GaN-based visible and UV LEDs with thin buffer layers for current spreading and damage protection. Compared to LEDs with optimal ITO contacts, our LEDs with AlN TCEs exhibit a lower forward voltage, higher light output power, and brighter light emission for all samples. The ohmic transport mechanism for current injection and spreading from the metal electrode to p-(Al)GaN layer via AlN TCE is also investigated by analyzing the p-(Al)GaN surface before and after EBD.

Effect of ultrahigh-temperature continuous ohmic heating treatment on fresh orange juice.

PubMed

Leizerson, Shirly; Shimoni, Eyal

2005-05-04

The scope of this study is the effect of ohmic heating thermal treatment on liquid fruit juice made of oranges. Effects of ohmic heating on the quality of orange juice were examined and compared to those of heat pasteurization at 90 degrees C for 50 s. Orange juice was treated at temperatures of 90, 120, and 150 degrees C for 1.13, 0.85, and 0.68 s in an ohmic heating system. Microbial counts showed complete inactivation of bacteria, yeast, and mold during ohmic and conventional treatments. The ohmic heating treatment reduced pectin esterase activity by 98%. The reduction in vitamin C was 15%. Ohmic-heated orange juice maintained higher amounts of the five representative flavor compounds than did heat-pasteurized juice. Sensory evaluation tests showed no difference between fresh and ohmic-heated orange juice. Thus, high-temperature ohmic-heating treatment can be effectively used to pasteurize fresh orange juice with minimal sensory deterioration.

Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

PubMed

Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

2017-10-30

We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

An EBIC equation for solar cells. [Electron Beam Induced Current

NASA Technical Reports Server (NTRS)

Luke, K. L.; Von Roos, O.

1983-01-01

When an electron beam of a scanning electron microscope (SEM) impinges on an N-P junction, the generation of electron-hole pairs by impact ionization causes a characteristic short circuit current I(sc) to flow. The I(sc), i.e., EBIC (electron beam induced current) depends strongly on the configuration used to investigate the cell's response. In this paper the case where the plane of the junction is perpendicular to the surface is considered. An EBIC equation amenable to numerical computations is derived as a function of cell thickness, source depth, surface recombination velocity, diffusion length, and distance of the junction to the beam-cell interaction point for a cell with an ohmic contact at its back surface. It is shown that the EBIC equation presented here is more general and easier to use than those previously reported. The effects of source depth, ohmic contact, and diffusion length on the normalized EBIC characteristic are discussed.

Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

PubMed Central

Rehman, Muhammad Muqeet; Siddiqui, Ghayas Uddin; Gul, Jahan Zeb; Kim, Soo-Wan; Lim, Jong Hwan; Choi, Kyung Hyun

2016-01-01

Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device. PMID:27811977

Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

NASA Astrophysics Data System (ADS)

Katzenmeyer, Aaron Michael

As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been realized and to locate the devices' most responsive region. The devices are shown to exhibit strongly enhanced photocurrent under reverse bias proposing unexpected efficiency increases in a scalable device layout.

Sawtooth control in fusion plasmas

NASA Astrophysics Data System (ADS)

Graves, J. P.; Angioni, C.; Budny, R. V.; Buttery, R. J.; Coda, S.; Eriksson, L.-G.; Gimblett, C. G.; Goodman, T. P.; Hastie, R. J.; Henderson, M. A.; Koslowski, H. R.; Mantsinen, M. J.; Martynov, An; Mayoral, M.-L.; Mück, A.; Nave, M. F. F.; Sauter, O.; Westerhof, E.; Contributors, JET–EFDA

2005-12-01

Clear observations of early triggering of neo-classical tearing modes by sawteeth with long quiescent periods have motivated recent efforts to control, and in particular destabilize, sawteeth. One successful approach explored in TCV utilizes electron cyclotron heating in order to locally increase the current penetration time in the core. The latter is also achieved in various machines by depositing electron cyclotron current drive or ion cyclotron current drive close to the q = 1 rational surface. Crucially, localized current drive also succeeds in destabilizing sawteeth which are otherwise stabilized by a co-existing population of energetic trapped ions in the core. In addition, a recent reversed toroidal field campaign at JET demonstrates that counter-neutral beam injection (NBI) results in shorter sawtooth periods than in the Ohmic regime. The clear dependence of the sawtooth period on the NBI heating power and the direction of injection also manifests itself in terms of the toroidal plasma rotation, which consequently requires consideration in the theoretical interpretation of the experiments. Another feature of NBI, expected to be especially evident in the negative ion based neutral beam injection (NNBI) heating planned for ITER, is the parallel velocity asymmetry of the fast ion population. It is predicted that a finite orbit effect of asymmetrically distributed circulating ions could strongly modify sawtooth stability. Furthermore, NNBI driven current with non-monotonic profile could significantly slow down the evolution of the safety factor in the core, thereby delaying sawteeth.

Ohmic Heating Assisted Lye Peeling of Pears.

PubMed

Gupta, Sarvesh; Sastry, Sudhir K

2018-05-01

Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

NASA Astrophysics Data System (ADS)

Van Hove, Marleen; Posthuma, Niels; Geens, Karen; Wellekens, Dirk; Li, Xiangdong; Decoutere, Stefaan

2018-04-01

p-GaN gate enhancement mode power transistors were processed in a Si CMOS processing line on 200 mm Si(111) substrates using Au-free metallization schemes. Si/Ti/Al/Ti/TiN ohmic contacts were formed after full recessing of the AlGaN barrier, followed by a HCl-based wet cleaning step. The electrical performance of devices aligned to the [11\\bar{2}0] and the perpendicular [1\\bar{1}00] directions was compared. The ohmic contact resistance was decreased from 1 Ω·mm for the [11\\bar{2}0] direction to 0.35 Ω·mm for the [1\\bar{1}00] direction, resulting in an increase of the drain saturation current from 0.5 to 0.6 A/mm, and a reduction of the on-resistance from 6.4 to 5.1 Ω·mm. Moreover, wafer mapping of the device characteristics over the 200 mm wafer showed a tighter statistical distribution for the [1\\bar{1}00] direction. However, by using an optimized sulfuric/ammonia peroxide (SPM/APM) cleaning step, the ohmic contact resistance could be lowered to 0.3 Ω·mm for both perpendicular directions.

Mathematical Model of Solid Food Pasteurization by Ohmic Heating: Influence of Process Parameters

PubMed Central

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product. PMID:24574874

Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

PubMed

Marra, Francesco

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

NASA Astrophysics Data System (ADS)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride compounds. The barrier height obtained on n GaN was ˜0-5-0.6 eV which was low compared to those obtained by Pt or Ni. This barrier height is too low for use as a gate contact and they can only have limited use, perhaps, in gas sensors where large leakage current can be tolerated in exchange for better thermal reliability. AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB2/Ti/Au source/drain ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB2/Au or Ni/TiB 2/Au) and were subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based ohmic metal and either Pt/Au, Ni/Au or Ni/TiB2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C. The need for sputter deposition of the borides causes' problem in achieving significantly lower specific contact resistance than with conventional schemes deposited using e-beam evaporation. The borides also seem to be, in general, good getters for oxygen leading to sheet resistivity issues. Ir/Au Schottky contacts and Ti/Al/Ir/Au ohmic contacts on n-type GaN were investigated as a function of annealing temperature and compared to their more common Ni-based counterparts. The Ir/Au ohmic contacts on n-type GaN with n˜1017 cm-3 exhibited barrier heights of 0.55 eV after annealing at 700°C and displayed less intermixing of the contact metals compared to Ni/Au. A minimum specific contact resistance of 1.6 x 10-6 O.cm2 was obtained for the ohmic contacts on n-type GaN with n˜1018 cm-3 after annealing at 900°C. The measurement temperature dependence of contact resistance was similar for both Ti/Al/Ir/Au and Ti/Al/Ni/Au, suggesting the same transport mechanism was present in both types of contacts. The Ir-based ohmic contacts displayed superior thermal aging characteristics at 350°C. Auger Electron Spectroscopy showed that Ir is a superior diffusion barrier at these moderate temperatures than Ni.

Global power balance on high density field reversed configurations for use in magnetized target fusion

NASA Astrophysics Data System (ADS)

Renneke, Richard M.

Field Reversed Configuration plasmas (FRCs) have been created in the Field Reversed Experiment-Liner (FRX-L) with density 2--6 x 10 22 m-3, total temperature 300--400 eV, and lifetime on the order of 10 micros. This thesis investigates global energy balance on high-density FRCs for the first time. The zero-dimensional approach to global energy balance developed by Rej and Tuszewski (Phys. Fluids 27, p. 1514, 1984) is utilized here. From the shots analyzed with this method, it is clear that energy loss from these FRCs is dominated by particle and thermal (collisional) losses. The percentage of radiative losses versus total loss is an order of magnitude lower than previous FRC experiments. This is reasonable for high density based on empirical scaling from the extensive database of tokamak plasma experiments. Ohmic dissipation, which heats plasma when trapped magnetic field decays to create electric field, is an important source of heating for the plasma. Ohmic heating shows a correlation with increasing the effective Lundquist number (S*). Empirical evidence suggest S* can be increased by lowering the density, which does not achieve the goals of FRX-L. A better way to improve ohmic heating is to trap more poloidal flux. This dissertation shows that FRX-L follows a semi-empirical scaling law which predicts plasma temperature gains for larger poloidal flux. Flux (tauφ) and particle (tauN) lifetimes for these FRCs were typically shorter than 10 micros. Approximately 1/3 of the particle and flux lifetimes for these FRCs did not scale with the usual tauN ≈ tauφ scaling of low-density FRCs, but instead showed tauN ≥ tau φ. However, scatter in the data indicates that the average performance of FRCs on FRX-L yields the typical (for FRCs) relationship tau N ≈ tauφ. Fusion energy gain Q was extrapolated for the shots analyzed in this study using a zero-dimensional scaling code with liner effects. The predicted Q is below the desired value of 0.1 (Schoenberg et al., LA-UR-98-2413, 1998). The situation predicted to lead to Q = 0.1 requires a larger plasma pressure than shown in the present data. This can be accomplished by increasing the plasma density (through larger fill pressure) and maintaining temperature with increased flux trapping. Larger Q and other benefits could be realized by raising the plasma pressure for future FRX-L shots. The innovation inherent in this work performed by the author is the extension of the global power balance model to include a time history of the plasma discharge. This extension required rigorous checking of the power balance model using internal density profiles provided by the multichord interferometer. Typical orders of the parameters calculated by the model are ˜500 MW total loss power, ˜100 MW ohmic heating power, and ˜200 MW total compression (input) power. Radiation was never measured above 5 MW, which is why it was deemed insignificant. It should be noted that these numbers are merely estimates and vary widely between shots.

High-performance Ge p-i-n photodetector on Si substrate

NASA Astrophysics Data System (ADS)

Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

2015-05-01

High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

PubMed

MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

2012-11-27

We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

PubMed

Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

2014-10-07

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

Switching phenomenon in a Se{70}Te{30-x}Cd{x} films

NASA Astrophysics Data System (ADS)

Afifi, M. A.; Bekheet, A. E.; Hegab, N. A.; Wahab, L. A.; Shehata, H. A.

2007-11-01

Amorphous Se{70}Te{30-x}Cd{x} (x = 0, 10) are obtained by thermal evaporation under vacuum of bulk materials on pyrographite and glass substrates. The I-V characteristic curves for the two film compositions are typical for a memory switch. They exhibited a transition from an ohmic region in the lower field followed by non-ohmic region in the high field region in the preswitching region, which has been explained by the Poole-Frenkel effect. The temperature dependence of current in the ohmic region is found to be of thermally activated process. The mean value of the threshold voltage bar{V}th increases linearly with increasing film thickness in the thickness range (100 491 nm), while it decreases exponentially with increasing temperature in the temperature range (293 343 K) for both compositions. The results are explained in accordance with the electrothermal model for the switching process. The effect of Cd on these parameters is also investigated.

Universal Scaling of Robust Thermal Hot Spot and Ionic Current Enhancement by Focused Ohmic Heating in a Conic Nanopore

NASA Astrophysics Data System (ADS)

Pan, Zehao; Wang, Ceming; Li, Meng; Chang, Hsueh-Chia

2016-09-01

A stable nanoscale thermal hot spot, with temperature approaching 100 °C , is shown to be sustained by localized Ohmic heating of a focused electric field at the tip of a slender conic nanopore. The self-similar (length-independent) conic geometry allows us to match the singular heat source at the tip to the singular radial heat loss from the slender cone to obtain a self-similar steady temperature profile along the cone and the resulting ionic current conductance enhancement due to viscosity reduction. The universal scaling, which depends only on a single dimensionless parameter Z , collapses the measured conductance data and computed temperature profiles in ion-track conic nanopores and conic nanopipettes. The collapsed numerical data reveal universal values for the hot-spot location and temperature in an aqueous electrolyte.

Universal Scaling of Robust Thermal Hot Spot and Ionic Current Enhancement by Focused Ohmic Heating in a Conic Nanopore.

PubMed

Pan, Zehao; Wang, Ceming; Li, Meng; Chang, Hsueh-Chia

2016-09-23

A stable nanoscale thermal hot spot, with temperature approaching 100 °C, is shown to be sustained by localized Ohmic heating of a focused electric field at the tip of a slender conic nanopore. The self-similar (length-independent) conic geometry allows us to match the singular heat source at the tip to the singular radial heat loss from the slender cone to obtain a self-similar steady temperature profile along the cone and the resulting ionic current conductance enhancement due to viscosity reduction. The universal scaling, which depends only on a single dimensionless parameter Z, collapses the measured conductance data and computed temperature profiles in ion-track conic nanopores and conic nanopipettes. The collapsed numerical data reveal universal values for the hot-spot location and temperature in an aqueous electrolyte.

Calculation of Eddy Currents In the CTH Vacuum Vessel and Coil Frame

DOE Office of Scientific and Technical Information (OSTI.GOV)

A. Zolfaghari, A. Brooks, A. Michaels, J. Hanson, and G. Hartwell

2012-09-25

Knowledge of eddy currents in the vacuum vessel walls and nearby conducting support structures can significantly contribute to the accuracy of Magnetohydrodynamics (MHD) equilibrium reconstruction in toroidal plasmas. Moreover, the magnetic fields produced by the eddy currents could generate error fields that may give rise to islands at rational surfaces or cause field lines to become chaotic. In the Compact Toroidal Hybrid (CTH) device (R0 = 0.75 m, a = 0.29 m, B ≤ 0.7 T), the primary driver of the eddy currents during the plasma discharge is the changing flux of the ohmic heating transformer. Electromagnetic simulations are usedmore » to calculate eddy current paths and profile in the vacuum vessel and in the coil frame pieces with known time dependent currents in the ohmic heating coils. MAXWELL and SPARK codes were used for the Electromagnetic modeling and simulation. MAXWELL code was used for detailed 3D finite-element analysis of the eddy currents in the structures. SPARK code was used to calculate the eddy currents in the structures as modeled with shell/surface elements, with each element representing a current loop. In both cases current filaments representing the eddy currents were prepared for input into VMEC code for MHD equilibrium reconstruction of the plasma discharge. __________________________________________________« less

High Temperature Characteristics of Pt/TaSi2/Pt/W and Pt/Ti/W Diffusion Barrier Systems for Ohmic Contacts to 4H-SiC

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy

2017-01-01

The degradation of ohmic contacts to 4H-SiC pressure sensors over time at high temperature is primarily due to two failure mechanisms: migrating bond pad Au and atmospheric O toward the ohmic contact SiC interface and the inter-metallic mixing between diffusion barrier systems (DBS) and the underlying ohmic contact metallization. We investigated the effectiveness of Pt/TaSi2/Pt/W (DBS-A) and Pt/Ti/W (DBS-B) in preventing Au and O diffusion through the underlying binary Ti/W or alloyed W50:Ni50 ohmic contacts to 4H-SiC and the DBS ohmic contact intermixing at temperature up to 700 C.

Universal Scaling of Robust Thermal Hot Spot and Ionic Current Enhancement by Focused Ohmic Heating in a Conic Nanopore

PubMed Central

Pan, Zehao; Wang, Ceming; Li, Meng; Chang, Hsueh-Chia

2017-01-01

A stable nanoscale thermal hot spot, with temperature approaching 100 °C, is shown to be sustained by localized Ohmic heating of a focused electric field at the tip of a slender conic nanopore. The self-similar (length-independent) conic geometry allows us to match the singular heat source at the tip to the singular radial heat loss from the slender cone to obtain a self-similar steady temperature profile along the cone and the resulting ionic current conductance enhancement due to viscosity reduction. The universal scaling, which depends only on a single dimensionless parameter Z, collapses the measured conductance data and computed temperature profiles in ion-track conic nanopores and conic nanopipettes. The collapsed numerical data reveal universal values for the hot-spot location and temperature in an aqueous electrolyte. PMID:27715110

Fabrication of silicon-based template-assisted nanoelectrode arrays and ohmic contact properties investigation.

PubMed

Bai, Anqi; Cheng, Buwen; Wang, Xiaofeng; Xue, Chunlai; Zuo, Yuhua; Wang, Qiming

2010-11-01

A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100-200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current-voltage (I-V) curves revealed the contact properties. After annealing in N2 at 700 degrees C, good linear property was shown with contact resistance of 33 omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Ke-Wei; Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798; Fujihashi, Yuta

A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagramsmore » are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.« less

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

An explicit scheme for ohmic dissipation with smoothed particle magnetohydrodynamics

NASA Astrophysics Data System (ADS)

Tsukamoto, Yusuke; Iwasaki, Kazunari; Inutsuka, Shu-ichiro

2013-09-01

In this paper, we present an explicit scheme for Ohmic dissipation with smoothed particle magnetohydrodynamics (SPMHD). We propose an SPH discretization of Ohmic dissipation and solve Ohmic dissipation part of induction equation with the super-time-stepping method (STS) which allows us to take a longer time step than Courant-Friedrich-Levy stability condition. Our scheme is second-order accurate in space and first-order accurate in time. Our numerical experiments show that optimal choice of the parameters of STS for Ohmic dissipation of SPMHD is νsts ˜ 0.01 and Nsts ˜ 5.

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

NASA Astrophysics Data System (ADS)

Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

2017-04-01

The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

Microstructure, electrical properties, and thermal stability of Au-based ohmic contacts to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, L.L.; Davis, R.F.; Kim, M.J.

1997-09-01

The work described in this paper is part of a systematic study of ohmic contact strategies for GaN-based semiconductors. Au contacts exhibited ohmic behavior on p-GaN when annealed at high temperature. The specific contact resistivity ({rho}{sub c}) calculated from TLM measurements on Au/p-GaN contacts was 53{Omega}{center_dot}cm{sup 2} after annealing at 800{degree}C. Multilayer Au/Mg/Au/p-GaN contacts exhibited linear, ohmic current-voltage (I-V) behavior in the as-deposited condition with {rho}{sub c}=214{Omega}{center_dot}cm{sup 2}. The specific contact resistivity of the multilayer contact increased significantly after rapid thermal annealing (RTA) through 725{degree}C. Cross-sectional microstructural characterization of the Au/p-GaN contact system via high-resolution electron microscopy (HREM) revealed thatmore » interfacial secondary phase formation occurred during high-temperature treatments, which coincided with the improvement of contact performance. In the as-deposited multilayer Au/Mg/Au/p-GaN contact, the initial 32 nm Au layer was found to be continuous. However, Mg metal was found in direct contact with the GaN in many places in the sample after annealing at 725{degree}C for 15 s. The resultant increase in contact resistance is believed to be due to the barrier effect increased by the presence of the low work function Mg metal. {copyright} {ital 1997 Materials Research Society.}« less

A Spectroscopic Study of Impurity Behavior in Neutral-beam and Ohmically Heated TFTR Discharges

DOE R&D Accomplishments Database

Stratton, B. C.; Ramsey, A. T.; Boody, F. P.; Bush, C. E.; Fonck, R. J.; Groenbner, R. J.; Hulse, R. A.; Richards, R. K.; Schivell, J.

1987-02-01

Quantitative spectroscopic measurements of Z{sub eff}, impurity densities, and radiated power losses have been made for ohmic- and neutral-beam-heated TFTR discharges at a plasma current of 2.2 MA and toroidal field of 4.7 T. Variations in these quantities with line-average plasma density (anti n{sub e}) and beam power up to 5.6 MW are presented for discharges on a graphite movable limiter. A detailed discussion of the use of an impurity transport model to infer absolute impurity densities and radiative losses from line intensity and visible continuum measurements is given. These discharges were dominated by low-Z impurities with carbon having a considerably higher density than oxygen, except in high-anti n{sub e} ohmic discharges, where the densities of carbon and oxygen were comparable. Metallic impurity concentrations and radiative losses were small, resulting in hollow radiated power profiles and fractions of the input power radiated being 30 to 50% for ohmic heating and 30% or less with beam heating. Spectroscopic estimates of the radiated power were in good agreement with bolometrically measured values. Due to an increase in the carbon density, Z{sub eff} rose from 2.0 to 2.8 as the beam power increased from 0 to 5.6 MW, pointing to a potentially serious dilution of the neutron-producing plasma ions as the beam power increased. Both the low-Z and metallic impurity concentrations were approximately constant with minor radius, indicating no central impurity accumulation in these discharges.

Modelling of illuminated current-voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

NASA Astrophysics Data System (ADS)

Gopal, Vishnu; Qiu, WeiCheng; Hu, Weida

2014-11-01

The current-voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation-recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be the best described by an exponential function of the type, Iexcess = Ir0 + K1 exp (K2 V), where Ir0, K1, and K2 are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Light-induced new memory states in electronic resistive switching of NiO/NSTO junction

NASA Astrophysics Data System (ADS)

Wei, Ling; Li, G. Q.; Zhang, W. F.

2016-02-01

n-type and p-type NiO films were prepared on SrTiO3:Nb (NSTO) by controlling oxygen pressures during the process of pulsed laser deposition. The results of current-voltage (I-V) characteristics and photocurrent investigation indicate that the junction shows a typical electronic bipolar resistive switching (RS) behavior and the optical injection can add new resistance states. Photocurrents can obviously be modulated by different resistance states of NiO/NSTO junction. The linear fitting results of I-V curves reveal that the low resistance state follows Ohmic behavior and the high resistance state follows Schottky-emission mechanism. The depletion widths under forward and reverse bias in the dark and with the illumination were estimated respectively. Combined with the energy band structure, the mechanism of RS and photoresponse in the NiO/NSTO junction can be attributed to the variance of interfacial barrier during electrical and optical injection. These results pave the way for the application of the NiO/NSTO junction in the multilevel storage of optical-electrical devices.

Free flux flow: a probe into the field dependence of vortex core size in clean single crystals

NASA Astrophysics Data System (ADS)

Gapud, A. A.; Gafarov, O.; Moraes, S.; Thompson, J. R.; Christen, D. K.; Reyes, A. P.

2012-02-01

The free-flux-flow (FFF) phase has been attained successfully in a number of clean, weak-pinning, low-anisotropy, low-Tc, single-crystal samples as a unique probe into type II superconductivity that is independent of composition. The ``clean'' quality of the samples have been confirmed by reversible magnetization, high residual resistivity ratio, and low critical current densities Jc with a re-entrant ``peak'' effect in Jc(H) just below the critical field Hc2. The necessity of high current densities presented technical challenges that had been successfully addressed, and FFF is confirmed by a field-dependent ohmic state that is also well below the normal state. In these studies, the FFF resistivity ρf(H) has been measured in order to observe the field-dependent core size of the quantized magnetic flux vortices as modeled recently by Kogan and Zelezhina (KZ) who predicted a specific deviation from Bardeen-Stephen flux flow, dependent on normalized temperature and scattering parameter λ. The compounds studied are: V3Si, LuNi2B2C, and NbSe2, and results have shown consistency with the KZ model. Other applications of this method could also be used to probe normal-state properties, especially for the new iron arsenides, as will be discussed.

Acid-inducible proton influx currents in the plasma membrane of murine osteoclast-like cells.

PubMed

Kuno, Miyuki; Li, Guangshuai; Moriura, Yoshie; Hino, Yoshiko; Kawawaki, Junko; Sakai, Hiromu

2016-05-01

Acidification of the resorption pits, which is essential for dissolving bone, is produced by secretion of protons through vacuolar H(+)-ATPases in the plasma membrane of bone-resorbing cells, osteoclasts. Consequently, osteoclasts face highly acidic extracellular environments, where the pH gradient across the plasma membrane could generate a force driving protons into the cells. Proton influx mechanisms during the acid exposure are largely unknown, however. In this study, we investigated extracellular-acid-inducible proton influx currents in osteoclast-like cells derived from a macrophage cell line (RAW264). Decreasing extracellular pH to <5.5 induced non-ohmic inward currents. The reversal potentials depended on the pH gradients across the membrane and were independent of concentrations of Na(+), Cl(-), and HCO3 (-), suggesting that they were carried largely by protons. The acid-inducible proton influx currents were not inhibited by amiloride, a widely used blocker for cation channels/transporters, or by 4,4'-diisothiocyanato-2,2'-stilbenesulfonate(DIDS) which blocks anion channels/transporters. Additionally, the currents were not significantly affected by V-ATPase inhibitors, bafilomycin A1 and N,N'-dicyclohexylcarbodiimide. Extracellular Ca(2+) (10 mM) did not affect the currents, but 1 mM ZnCl2 decreased the currents partially. The intracellular pH in the vicinity of the plasma membrane was dropped by the acid-inducible H(+) influx currents, which caused overshoot of the voltage-gated H(+) channels after removal of acids. The H(+) influx currents were smaller in undifferentiated, mononuclear RAW cells and were negligible in COS7 cells. These data suggest that the acid-inducible H(+) influx (H(+) leak) pathway may be an additional mechanism modifying the pH environments of osteoclasts upon exposure to strong acids.

Anomalous Ion Heating, Intrinsic and Induced Rotation in the Pegasus Toroidal Experiment

NASA Astrophysics Data System (ADS)

Burke, M. G.; Barr, J. L.; Bongard, M. W.; Fonck, R. J.; Hinson, E. T.; Perry, J. M.; Redd, A. J.; Thome, K. E.

2014-10-01

Pegasus plasmas are initiated through either standard, MHD stable, inductive current drive or non-solenoidal local helicity injection (LHI) current drive with strong reconnection activity, providing a rich environment to study ion dynamics. During LHI discharges, a large amount of anomalous impurity ion heating has been observed, with Ti ~ 800 eV but Te < 100 eV. The ion heating is hypothesized to be a result of large-scale magnetic reconnection activity, as the amount of heating scales with increasing fluctuation amplitude of the dominant, edge localized, n = 1 MHD mode. Chordal Ti spatial profiles indicate centrally peaked temperatures, suggesting a region of good confinement near the plasma core surrounded by a stochastic region. LHI plasmas are observed to rotate, perhaps due to an inward radial current generated by the stochastization of the plasma edge by the injected current streams. H-mode plasmas are initiated using a combination of high-field side fueling and Ohmic current drive. This regime shows a significant increase in rotation shear compared to L-mode plasmas. In addition, these plasmas have been observed to rotate in the counter-Ip direction without any external momentum sources. The intrinsic rotation direction is consistent with predictions from the saturated Ohmic confinement regime. Work supported by US DOE Grant DE-FG02-96ER54375.

Tunneling mechanism and contact mechanics of colloidal nanoparticle assemblies.

PubMed

Biaye, Moussa; Zbydniewska, Ewa; Mélin, Thierry; Deresmes, Dominique; Copie, Guillaume; Cleri, Fabrizio; Sangeetha, Neralagatta; Decorde, Nicolas; Viallet, Benoit; Grisolia, Jérémie; Ressier, Laurence; Diesinger, Heinrich

2016-11-25

Nanoparticle assemblies with thiol-terminated alkyl chains are studied by conducting atomic force microscopy (c-AFM) regarding their use as strain gauges for touch-sensitive panels. Current-force spectroscopy is used as a characterization tool complementary to the macroscopic setup since it allows a bias to be applied to a limited number of junctions, overcoming the Coulomb blockade energy and focusing on the contact electromechanics and the transport mechanism across the ligand. First, transition voltage spectroscopy is applied with varying force to target the underlying tunneling mechanism by observing whether the transition between the ohmic and exponential current-voltage behavior is force-dependent. Secondly, current-force spectroscopy in the ohmic range below the transition voltage is performed. The current-force behavior of the AFM probe in contact with a nanoparticle multilayer is associated with the spread of force and current within the nanoparticle lattice and at the level of adjacent particles by detailed contact mechanics treatment. The result is twofold: concerning the architecture of sensors, this work is a sample case of contact electromechanics at scales ranging from the device scale down to the individual ligand molecule. Regarding transport across the molecule, the vacuum tunneling mechanism is favored over the conduction by coherent molecular states, which is a decision-making aid for the choice of ligand in applications.

Are Dead Chickens Ohmic?

ERIC Educational Resources Information Center

Kocijancic, Slavko; O'Sullivan, Colm

2004-01-01

Modern low-cost data acquisition systems enable pupils to study the voltage-current characteristics of a wide range of different materials and devices in a quick and convenient way. In particular, it is possible to study materials, such as meat and vegetables, not normally associated with school physics experiments.

A new method of making ohmic contacts to p-GaN

NASA Astrophysics Data System (ADS)

Hernández-Gutierrez, C. A.; Kudriavtsev, Yu.; Mota, Esteban; Hernández, A. G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V.; Casallas-Moreno, Y. L.; López-López, M.

2016-12-01

The structural, chemical, and electrical characteristics of In+ ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In+ ions with an implantation dose of 5 × 1015 ions/cm2 at room temperature to form a thin layer of InxGa1-xN located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In+ implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10-4 Ωcm2 was achieved for Au/Ni/p-InxGa1-xN/p-GaN ohmic contacts.

Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

NASA Astrophysics Data System (ADS)

Ebrahimpour, Zeinab; Mansour, Nastaran

2017-02-01

This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler-Nordheim (F-N) plots show the transition of the in-plane charge transport mechanism from direct tunneling to field emission in annealed films. Our results suggest that, the formation of a thin layer of Au2O3 , the proximity of the nanoparticles as well as their higher filling fraction are important parameters related with the tunneling process enhancement. The observed non-ohmic conductivity property can make these self-assembled gold nanoparticle films very useful structures in different applications such as sensing, resistors and other nanoelectronic applications.

X-ray emission reduction and photon dose lowering by energy loss of fast electrons induced by return current during the interaction of a short-pulse high-intensity laser on a metal solid target

NASA Astrophysics Data System (ADS)

Compant La Fontaine, A.

2018-04-01

During the interaction of a short-pulse high-intensity laser with the preplasma produced by the pulse's pedestal in front of a high-Z metal solid target, high-energy electrons are produced, which in turn create an X-ray source by interacting with the atoms of the converter target. The current brought by the hot electrons is almost completely neutralized by a return current j → driven by the background electrons of the conductive target, and the force exerted on the hot electrons by the electric field E → which induces Ohmic heating j → .E → , produced by the background electrons, reduces the energy of the hot electrons and thus lowers the X-ray emission and photon dose. This effect is analyzed here by means of a simple 1-D temperature model which contains the most significant terms of the relativistic Fokker-Planck equation with electron multiple scattering, and the energy equations of ions, hot, and cold electrons are then solved numerically. This Ohmic heating energy loss fraction τOh is introduced as a corrective term in an improved photon dose model. For instance, for a ps laser pulse with 10 μm spot size, the dose obtained with a tantalum target is reduced by less than about 10% to 40% by the Ohmic heating, depending upon the plasma scale length, target thickness, laser parameters, and in particular its spot size. The laser and plasma parameters may be optimized to limit the effect of Ohmic heating, for instance at a small plasma scale length or small laser spot size. Conversely, others regimes not suitable for dose production are identified. For instance, the resistive heating is enhanced in a foam target or at a long plasma scale length and high laser spot size and intensity, as the mean emission angle θ0 of the incident hot electron bunch given by the ponderomotive force is small; thus, the dose produced by a laser interacting in a gas jet may be inhibited under these circumstances. The resistive heating may also be maximized in order to reduce the X-ray emission to lower the radiation level for instance in a safety radiological goal.

Dual ohmic contact to N- and P-type silicon carbide

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Design and simulation of control algorithms for stored energy and plasma current in non-inductive scenarios on NSTX-U

NASA Astrophysics Data System (ADS)

Boyer, Mark; Andre, Robert; Gates, David; Gerhardt, Stefan; Menard, Jonathan; Poli, Francesca

2015-11-01

One of the major goals of NSTX-U is to demonstrate non-inductive operation. To facilitate this and other program goals, the center stack has been upgraded and a second neutral beam line has been added with three sources aimed more tangentially to provide higher current drive efficiency and the ability to shape the current drive profile. While non-inductive start-up and ramp-up scenarios are being developed, initial non-inductive studies will likely rely on clamping the Ohmic coil current after the plasma current has been established inductively. In this work the ability to maintain control of stored energy and plasma current once the Ohmic coil has been clamped is explored. The six neutral beam sources and the mid-plane outer gap of the plasma are considered as actuators. System identification is done using TRANSP simulations in which the actuators are modulated around a reference shot. The resulting reduced model is used to design an optimal control law with anti-windup and a recently developed framework for closed loop simulations in TRANSP is used to test the control. Limitations due to actuator saturation are assessed and robustness to beam modulation, changes in the plasma density and confinement, and changes in density and temperature profile shapes are studied. Supported by US DOE contract DE-AC02-09CH11466.

Cold pulse and rotation reversals with turbulence spreading and residual stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hariri, F.; Naulin, V.; Juul Rasmussen, J.

2016-05-15

Transport modeling based on inclusion of turbulence spreading and residual stresses shows internal rotation reversals and polarity reversal of cold pulses, with a clear indication of nonlocal transport effects due to fast spreading in the turbulence intensity field. The effects of turbulence spreading and residual stress are calculated from the gradient of the turbulence intensity. In the model presented in this paper, the flux is carried by the turbulence intensity field, which in itself is subject to radial transport effects. The pulse polarity inversion and the rotation profile reversal positions are close to the radial location of the stable/unstable transition.more » Both effects have no direct explanation within the framework of classical transport modeling, where the fluxes are related directly to the linear growth rates, the turbulence intensity profile is not considered and the corresponding residual stress is absent. Our simulations are in qualitative agreement with measurements from ohmically heated plasmas. Rotation reversal at a finite radius is found in situations not displaying saturated confinement, which we identify as situations where the plasma is nearly everywhere unstable. As an additional and new effect, the model predicts a perturbation of the velocity profile following a cold pulse from the edge. This allows direct experimental confirmation of both the existence of residual stress caused by turbulence intensity profiles and fundamental ideas of transport modeling presented here.« less

High field conduction in Pb doped amorphous Se-Te system

NASA Astrophysics Data System (ADS)

Anjali, Patial, Balbir Singh; Thakur, Nagesh

2018-05-01

In the present study, DC conductivity measurements of as-Se80-xTe20Pbx (x = 0, 1 and 2) glassy alloys are made in the temperature range 298-318 K and in the voltage range 0-180 V. Current-voltage (I-V) characteristics point toward ohmic behavior at low electric field and non-ohmic is observed at high electric field. The variation of ln(I/V) against V are nearly found straight curves but slope of these curves does not decrease linearly with temperature indicates that the space charge limited conduction (SCLC) is absent. Instead the linear relation between ln(I) and V1/2 confirms that the conduction is either Poole-Frenkel type or Schottky emission. A detailed analysis shows that the dominant mechanism is Poole-Frenkel type conduction.

Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:Mg(0<=x<0.1) Ohmic contacts

NASA Astrophysics Data System (ADS)

Nikishin, S.; Chary, I.; Borisov, B.; Kuryatkov, V.; Kudryavtsev, Yu.; Asomoza, R.; Karpov, S. Yu.; Holtz, M.

2009-10-01

We report the mechanism of current injection in (Ni/Au)/p-AlxGa1-xN:Mg(0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρc). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρc for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

Modelling of illuminated current–voltage characteristics to evaluate leakage currents in long wavelength infrared mercury cadmium telluride photovoltaic detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Qiu, WeiCheng; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn

2014-11-14

The current–voltage characteristics of long wavelength mercury cadmium telluride infrared detectors have been studied using a recently suggested method for modelling of illuminated photovoltaic detectors. Diodes fabricated on in-house grown arsenic and vacancy doped epitaxial layers were evaluated for their leakage currents. The thermal diffusion, generation–recombination (g-r), and ohmic currents were found as principal components of diode current besides a component of photocurrent due to illumination. In addition, both types of diodes exhibited an excess current component whose growth with the applied bias voltage did not match the expected growth of trap-assisted-tunnelling current. Instead, it was found to be themore » best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. A study of the temperature dependence of the diode current components and the excess current provided the useful clues about the source of origin of excess current. It was found that the excess current in diodes fabricated on arsenic doped epitaxial layers has its origin in the source of ohmic shunt currents. Whereas, the source of excess current in diodes fabricated on vacancy doped epitaxial layers appeared to be the avalanche multiplication of photocurrent. The difference in the behaviour of two types of diodes has been attributed to the difference in the quality of epitaxial layers.« less

Ohmic resistance affects microbial community and electrochemical kinetics in a multi-anode microbial electrochemical cell

EPA Science Inventory

Multi-anode microbial electrochemical cells (MXCs) are considered as one of the most promising configurations for scale-up of MXCs, but fundamental understanding of anode kinetics governing current density is limited in the MXCs. In this study we first assessed microbial communi...

Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

PubMed

Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

2017-07-01

Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

SUNIST Microwave Power System

NASA Astrophysics Data System (ADS)

Feng, Songlin; Yang, Xuanzong; Feng, Chunhua; Wang, Long; Rao, Jun; Feng, Kecheng

2005-06-01

Experiments on the start-up and formation of spherical tokamak plasmas by electron cyclotron heating alone without ohmic heating and electrode discharge assisted electron cyclotron wave current start-up will be carried out on the SUNIST (Sino United Spherical Tokamak) device. The 2.45 GHz/100kW/30 ms microwave power system and 1000 V/50 A power supply for electrode discharge are ready for experiments with non-inductive current drive.

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark [Raleigh, NC; Bharathan, Jayesh [Cary, NC; Haberern, Kevin [Cary, NC; Bergmann, Michael [Chapel Hill, NC; Emerson, David [Chapel Hill, NC; Ibbetson, James [Santa Barbara, CA; Li, Ting [Ventura, CA

2012-01-03

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Global plasma oscillations in electron internal transport barriers in TCV

NASA Astrophysics Data System (ADS)

Udintsev, V. S.; Sauter, O.; Asp, E.; Fable, E.; Goodman, T. P.; Turri, G.; Graves, J. P.; Scarabosio, A.; Zhuang, G.; Zucca, C.; TCV Team

2008-12-01

In the Tokamak à Configuration Variable (TCV) (Hofmann F et al1994 Plasma Phys. Control. Fusion 36 B277), global plasma oscillations have been discovered in fully non-inductively driven plasmas featuring electron internal transport barriers (ITB) with strong ECRH/ECCD. These oscillations are linked to the destabilization and stabilization of MHD modes near the foot of the ITB and can lead to large oscillations of the total plasma current and line-averaged density, among others. They are intrinsically related to the fact that ITBs have large pressure gradients in a region of low magnetic shear. Therefore, the ideal MHD limit is relatively low and infernal modes can be unstable. Depending on the proximity to the ideal limit, small crashes or resistive modes can appear which affect the time evolution of the discharge. Being near marginal stability, the modes can self-stabilize due to the modification of the pressure gradient and local q-profile. The plasma recovers good confinement, reverses shear and the ITB builds up, until a new MHD mode is destabilized. TCV results show that this cycling behaviour can be controlled by modifying the current density or the pressure profiles, either with Ohmic current density perturbation or by modifying the ECH/ECCD power. It is demonstrated that many observations such as q >= 2 sawteeth, beta collapses, minor disruptions and oscillation regimes in ITBs can be assigned to the same physics origin: the proximity to the infernal mode stability limit.

Fabricating Ohmic contact on Nb-doped SrTiO{sub 3} surface in nanoscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuhang; National Key Laboratory of Shock Wave and Detonation Physics, Institute of Fluid Physics, Chinese Academy of Engineering Physics, Mianyang, Sichuan 621999; Shi, Xiaolan

2016-05-09

Fabricating reliable nano-Ohmic contact on wide gap semiconductors is an important yet difficult step in oxide nanoelectronics. We fabricated Ohmic contact on the n-type wide gap oxide Nb-doped SrTiO{sub 3} in nanoscale by mechanically scratching the surface using an atomic force microscopy tip. Although contacted to high work function metal, the scratched area exhibits nearly linear IV behavior with low contact resistance, which maintains for hours in vacuum. In contrast, the unscratched area shows Fowler–Nordheim tunneling dominated Schottky rectifying behavior with high contact resistance. It was found that the Ohmic conductivity in the scratched area was drastically suppressed by oxygenmore » gas indicating the oxygen vacancy origin of the Ohmic behavior. The surface oxygen vacancy induced barrier width reduction was proposed to explain the phenomena. The nanoscale approach is also applicable to macroscopic devices and has potential application in all-oxide devices.« less

Development of Numerical Methods to Estimate the Ohmic Breakdown Scenarios of a Tokamak

NASA Astrophysics Data System (ADS)

Yoo, Min-Gu; Kim, Jayhyun; An, Younghwa; Hwang, Yong-Seok; Shim, Seung Bo; Lee, Hae June; Na, Yong-Su

2011-10-01

The ohmic breakdown is a fundamental method to initiate the plasma in a tokamak. For the robust breakdown, ohmic breakdown scenarios have to be carefully designed by optimizing the magnetic field configurations to minimize the stray magnetic fields. This research focuses on development of numerical methods to estimate the ohmic breakdown scenarios by precise analysis of the magnetic field configurations. This is essential for the robust and optimal breakdown and start-up of fusion devices especially for ITER and its beyond equipped with low toroidal electric field (ET <= 0.3 V/m). A field-line-following analysis code based on the Townsend avalanche theory and a particle simulation code are developed to analyze the breakdown characteristics of actual complex magnetic field configurations including the stray magnetic fields in tokamaks. They are applied to the ohmic breakdown scenarios of tokamaks such as KSTAR and VEST and compared with experiments.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

Suns-VOC characteristics of high performance kesterite solar cells

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.

2014-08-01

Low open circuit voltage (VOC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)4 (CZTSSe) solar cells. We report high light intensity and low temperature Suns-VOC measurement in high performance CZTSSe devices. The Suns-VOC curves exhibit bending at high light intensity, which points to several prospective VOC limiting mechanisms that could impact the VOC, even at 1 sun for lower performing samples. These VOC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-VOC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower JSC-VOC diode ideality factor.

Analysis of the interaction of an electron beam with a solar cell. I. II

NASA Technical Reports Server (NTRS)

Von Roos, O.

1978-01-01

The short-circuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed. This configuration is the case in which the highly collimated electron beam strikes the edge of a planar junction a variable distance away from the edge of the depletion layer. An earlier treatment is generalized to encompass the ohmic contact at the back surface. The analysis employing Fourier and Wiener-Hopf techniques shows that it is impractical to determine the bulk diffusion length of a solar cell by a SEM used in the studied configuration unless the ohmic contact is partially removed.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

NASA Astrophysics Data System (ADS)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga 2O 3 using AZO/Ti/Au

DOE PAGES

Carey, IV, Patrick H.; Yang, Jiancheng; Ren, F.; ...

2017-09-14

AZO interlayers between n-Ga 2O 3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga 2O 3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10 -5 Ω-cm 2 were achieved after a relatively low temperature 400°C annealing. In conclusion, the conduction band offset between AZO and Ga 2O 3 is 0.79 eV and providesmore » a favorable pathway for improved electron transport across this interface.« less

Solution-Processed Germanium Nanowire-Positioned Schottky Solar Cells

DTIC Science & Technology

2011-04-01

nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal ...177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a single GeNW and different metal electrodes were systematically...containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW

Effects of internal structure on equilibrium of field-reversed configuration plasma sustained by rotating magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yambe, Kiyoyuki; Inomoto, Michiaki; Okada, Shigefumi

The effects of an internal structure on the equilibrium of a field-reversed configuration (FRC) plasma sustained by rotating magnetic field is investigated by using detailed electrostatic probe measurements in the FRC Injection Experiment apparatus [S. Okada, et al., Nucl. Fusion. 45, 1094 (2005)]. An internal structure installed axially on the geometrical axis, which simulates Ohmic transformer or external toroidal field coils on the FRC device, brings about substantial changes in plasma density profile. The internal structure generates steep density-gradients not only on the inner side but on the outer side of the torus. The radial electric field is observed tomore » sustain the ion thermal pressure-gradient in the FRC without the internal structure; however, the radial electric field is not sufficient to sustain the increased ion thermal pressure-gradient in the FRC with the internal structure. Spontaneously driven azimuthal ion flow will be accountable for the imbalance of the radial pressure which is modified by the internal structure.« less

Pegasus power system facility upgrades

NASA Astrophysics Data System (ADS)

Lewicki, B. T.; Kujak-Ford, B. A.; Winz, G. R.

2008-11-01

Two key Pegasus systems have been recently upgraded: the Ohmic-transformer IGCT bridge control system, and the plasma-gun injector power system. The Ohmic control system contains two new microprocessor controlled components to provide an interface between the PWM controller and the IGCT bridges. An interface board conditions the command signals from the PWM controller. A splitter/combiner board routes the conditioned PWM commands to an array of IGCT bridges and interprets IGCT bridge status. This system allows for any PWM controller to safely control IGCT bridges. Future developments will include a transition to a polyphasic bridge control. This will allow for 3 to 4 times the present pulse length and provide a much higher switching frequency. The plasma gun injector system now includes active current feedback control on gun bias current via PWM buck type power supplies. Near term goals include a doubling or tripling of the applied bias voltage. Future arc bias system power supplies may include a simpler boost type system which will allow access to even higher voltages using existing low voltage energy storage systems.

Sodium leak channel, non-selective contributes to the leak current in human myometrial smooth muscle cells from pregnant women.

PubMed

Reinl, Erin L; Cabeza, Rafael; Gregory, Ismail A; Cahill, Alison G; England, Sarah K

2015-10-01

Uterine contractions are tightly regulated by the electrical activity of myometrial smooth muscle cells (MSMCs). These cells require a depolarizing current to initiate Ca(2+) influx and induce contraction. Cationic leak channels, which permit a steady flow of cations into a cell, are known to cause membrane depolarization in many tissue types. Previously, a Gd(3+)-sensitive, Na(+)-dependent leak current was identified in the rat myometrium, but the presence of such a current in human MSMCs and the specific ion channel conducting this current was unknown. Here, we report the presence of a Na(+)-dependent leak current in human myometrium and demonstrate that the Na(+)-leak channel, NALCN, contributes to this current. We performed whole-cell voltage-clamp on fresh and cultured MSMCs from uterine biopsies of term, non-laboring women and isolated the leak currents by using Ca(2+) and K(+) channel blockers in the bath solution. Ohmic leak currents were identified in freshly isolated and cultured MSMCs with normalized conductances of 14.6 pS/pF and 10.0 pS/pF, respectively. The myometrial leak current was significantly reduced (P < 0.01) by treating cells with 10 μM Gd(3+) or by superfusing the cells with a Na(+)-free extracellular solution. Reverse transcriptase PCR and immunoblot analysis of uterine biopsies from term, non-laboring women revealed NALCN messenger RNA and protein expression in the myometrium. Notably, ∼90% knockdown of NALCN protein expression with lentivirus-delivered shRNA reduced the Gd(3+)-sensitive leak current density by 42% (P < 0.05). Our results reveal that NALCN, in part, generates the leak current in MSMCs and provide the basis for future research assessing NALCN as a potential molecular target for modulating uterine excitability. © The Author 2015. Published by Oxford University Press on behalf of the European Society of Human Reproduction and Embryology. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Bifurcation in the MHD behaviour of a self-organizing system: the reversed field pinch (RFP)

NASA Astrophysics Data System (ADS)

Cappello, S.

2004-12-01

Within the framework of MHD modelling the RFP is shown to develop turbulent or laminar regimes switching from the former to the latter in a continuous way depending on the strength of dissipative forces (the higher they are the more laminar is the corresponding regime). In either of these cases interesting features can be observed such as the occurrence of quasi-periodic relaxation events involving reconnection processes, or the formation of stationary helical symmetric configurations. The first case corresponds to the conventional turbulent dynamo in the RFP where perturbations with multiple helical harmonic content are present. The second case corresponds to a global single helical deformation of the current channel. This simpler configuration is associated with a laminar electrostatic dynamo field and may also be found as a solution of a helical Ohmic equilibrium problem where a finite beta is necessary. The continuity of the transition between the two regimes suggests that the simple helical symmetric solution can provide a fruitful intuitive description of the RFP dynamo in general. Many of the MHD predictions are in good agreement with experimental findings and suggest possible improvements for the confinement properties of the RFP configuration.

An empirical/theoretical model with dimensionless numbers to predict the performance of electrodialysis systems on the basis of operating conditions.

PubMed

Karimi, Leila; Ghassemi, Abbas

2016-07-01

Among the different technologies developed for desalination, the electrodialysis/electrodialysis reversal (ED/EDR) process is one of the most promising for treating brackish water with low salinity when there is high risk of scaling. Multiple researchers have investigated ED/EDR to optimize the process, determine the effects of operating parameters, and develop theoretical/empirical models. Previously published empirical/theoretical models have evaluated the effect of the hydraulic conditions of the ED/EDR on the limiting current density using dimensionless numbers. The reason for previous studies' emphasis on limiting current density is twofold: 1) to maximize ion removal, most ED/EDR systems are operated close to limiting current conditions if there is not a scaling potential in the concentrate chamber due to a high concentration of less-soluble salts; and 2) for modeling the ED/EDR system with dimensionless numbers, it is more accurate and convenient to use limiting current density, where the boundary layer's characteristics are known at constant electrical conditions. To improve knowledge of ED/EDR systems, ED/EDR models should be also developed for the Ohmic region, where operation reduces energy consumption, facilitates targeted ion removal, and prolongs membrane life compared to limiting current conditions. In this paper, theoretical/empirical models were developed for ED/EDR performance in a wide range of operating conditions. The presented ion removal and selectivity models were developed for the removal of monovalent ions and divalent ions utilizing the dominant dimensionless numbers obtained from laboratory scale electrodialysis experiments. At any system scale, these models can predict ED/EDR performance in terms of monovalent and divalent ion removal. Copyright © 2016 Elsevier Ltd. All rights reserved.

[Acceleration of osmotic dehydration process through ohmic heating of foods: raspberries (Rubus idaeus)].

PubMed

Simpson, Ricardo R; Jiménez, Maite P; Carevic, Erica G; Grancelli, Romina M

2007-06-01

Raspberries (Rubus idaeus) were osmotically dehydrated by applying a conventional method under the supposition of a homogeneous solution, all in a 62% glucose solution at 50 degrees C. Raspberries (Rubus idaeus) were also osmotically dehydrated by using ohmic heating in a 57% glucose solution at a variable voltage (to maintain temperature between 40 and 50 degrees C) and an electric field intensity <100 V/cm. When comparing the results from both experiments it was evident that processing time is reduced when ohmic heating technique was used. In some cases this reduction reached even 50%. This is explained by the additional effect to the thermal damage that is generated in an ohmic process, denominated electroporation.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

PubMed

Polley, Craig M; Clarke, Warrick R; Simmons, Michelle Y

2011-10-03

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

Innovative food processing technology using ohmic heating and aseptic packaging for meat.

PubMed

Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

2014-02-01

Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

Effect of Electropermeabilization by Ohmic Heating for Inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium, and Listeria monocytogenes in Buffered Peptone Water and Apple Juice

PubMed Central

Park, Il-Kyu

2013-01-01

The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (P < 0.05) from that resulting from conventional heating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (P < 0.05), and these differences increased with increasing levels of inactivation of three food-borne pathogens. These results demonstrate that ohmic heating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating. PMID:23995939

Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

PubMed

Park, Il-Kyu; Kang, Dong-Hyun

2013-12-01

The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (P<0.05) from that resulting from conventional heating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (P<0.05), and these differences increased with increasing levels of inactivation of three food-borne pathogens. These results demonstrate that ohmic heating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

Effect of cathode thickness on the performance of planar Na-NiCl 2 battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xiaochuan; Chang, Hee Jung; Bonnett, Jeff F.

Na-beta alumina batteries (NBBs) are one of the most promising technologies for renewable energy storage and grid applications. Commercial NBBs are typically constructed in tubular designs, primarily because of their ease of sealing. But, planar designs are considered superior to tubular counterparts in terms of power output, cell packing, ease of assembly, and thermal management. In this paper, the performance of planar NBBs has been evaluated at an intermediate temperature. In particular, planar Na-NiCl 2 cells with different cathode loadings and thicknesses have been studied at 190 °C. We investigated the effects of the cathode thickness, charging current, and dischargingmore » power output on the cell capacity and resistance. More than 60% of theoretical cell capacity was retained with constant discharging power levels of 200, 175, and 100 mW/cm 2 for 1x, 2x, and 3x cathode loadings, respectively. The cell resistance with 1x and 2x cathode loadings was dominated by ohmic resistance with discharging currents up to 105 mA/cm 2, while for 3x cathode loading, it was primarily dominated by ohmic resistance with currents less than 66.67 mA/cm 2 and by polarization resistance above 66.67 mA/cm 2.« less

Effect of cathode thickness on the performance of planar Na-NiCl 2 battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xiaochuan; Chang, Hee Jung; Bonnett, Jeff F.

Na-beta alumina batteries (NBBs) are one of the most promising technologies for renewable energy storage and grid applications. Commercial NBBs are typically constructed in tubular designs, primarily because of their ease of sealing. However, planar designs are considered superior to tubular designs in terms of power output, cell packing, ease of assembly, and thermal management. In this paper, the performance of planar NBBs has been evaluated at an intermediate temperature. In particular, planar Na-NiCl2 cells with different cathode loadings and thicknesses have been studied at 190oC. The effects of the cathode thickness, charging current, and discharging power output on themore » cell capacity and resistance have been investigated. More than 60% of theoretical cell capacity could be retained with constant discharging power levels of 600, 525, and 300 mW for 1x, 2x, and 3x cathode loadings, respectively. The cell resistance with 1x and 2x cathode loadings was dominated by ohmic resistance with discharging currents up to 105 mA/cm2, while for 3x cathode loading, it was primarily dominated by ohmic resistance with currents less than 66.7 mA/cm2 and by polarization resistance above 66.7 mA/cm2.« less

Ohmic resistance affects microbial community and ...

EPA Pesticide Factsheets

Multi-anode microbial electrochemical cells (MXCs) are considered as one of the most promising configurations for scale-up of MXCs, but fundamental understanding of anode kinetics governing current density is limited in the MXCs. In this study we first assessed microbial community and electrochemical kinetic parameters for biofilms on individual anodes in a multi-anode MXC to better comprehend anode fundamentals. Microbial community analysis using 16S rRNA illumine sequencing showed that Geobactor genus, one of the most kinetically efficient anode-respiring bacteria (ARB), was abundant (87%) only on the biofilm anode closest to a reference electrode in which current density was the highest among four anodes. In comparison, Geobacter populations were less than 11% for other three anodes more distant from the reference electrode, generating small current density. Half-saturation anode potential (EKA) was the lowest at -0.251 to -0.242 V (vs. standard hydrogen electrode) for the closest anode, while EKA was as high as -0.134 V for the farthest anode. Our study clearly proves that ohmic resistance changes anode potential which mainly causes different biofilm communities on individual anodes and consequently influences anode kinetics. This study explored the use of multiple anodes in microelectrochemical cells and the microbial community on these anodes, as a function of the efficiency in producing hydrogen peroxide.

Effect of cathode thickness on the performance of planar Na-NiCl 2 battery

DOE PAGES

Lu, Xiaochuan; Chang, Hee Jung; Bonnett, Jeff F.; ...

2017-10-18

Na-beta alumina batteries (NBBs) are one of the most promising technologies for renewable energy storage and grid applications. Commercial NBBs are typically constructed in tubular designs, primarily because of their ease of sealing. But, planar designs are considered superior to tubular counterparts in terms of power output, cell packing, ease of assembly, and thermal management. In this paper, the performance of planar NBBs has been evaluated at an intermediate temperature. In particular, planar Na-NiCl 2 cells with different cathode loadings and thicknesses have been studied at 190 °C. We investigated the effects of the cathode thickness, charging current, and dischargingmore » power output on the cell capacity and resistance. More than 60% of theoretical cell capacity was retained with constant discharging power levels of 200, 175, and 100 mW/cm 2 for 1x, 2x, and 3x cathode loadings, respectively. The cell resistance with 1x and 2x cathode loadings was dominated by ohmic resistance with discharging currents up to 105 mA/cm 2, while for 3x cathode loading, it was primarily dominated by ohmic resistance with currents less than 66.67 mA/cm 2 and by polarization resistance above 66.67 mA/cm 2.« less

Effect of Lanthanum-Strontium Cathode Current-Collecting Layer on the Performance of Anode Supported Type Planar Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Park, Sun-Young; Ji, Ho-Il; Kim, Hae-Ryoung; Yoon, Kyung Joong; Son, Ji-Won; Lee, Hae-Weon; Lee, Jong-Ho

2013-07-01

We applied screen-printed (La,Sr)CoO3 as a current-collecting layer of planar type unit-cell for lower temperature operation of SOFCs. In this study the effects of the cathode current-collecting layer on the performance of unit cell and symmetric half cell were investigated via AC and DC polarization experiments. According to our investigation, appropriately controlled current collecting layer was very effective to enhance the unit cell performance by reducing not only the ohmic resistance but also the polarization losses of SOFC cathode.

Multi-functional properties of CaCu3Ti4O12 thin films

NASA Astrophysics Data System (ADS)

Felix, A. A.; Rupp, J. L. M.; Varela, J. A.; Orlandi, M. O.

2012-09-01

In this work, electric transport properties of CaCu3Ti4O12 (CCTO) thin films were investigated for resistive switching, rectifying and gas sensor applications. Single phase CCTO thin films were produced by polymeric precursor method (PPM) on different substrates and their electrical properties were studied. Films produced on LNO/Si substrates have symmetrical non-ohmic current-voltage characteristics, while films deposited on Pt/Si substrates have a highly asymmetrical non-ohmic behavior which is related to a metal-semiconductor junction formed at the CCTO/Pt interface. In addition, results confirm that CCTO has a resistive switching response which is enhanced by Schottky contacts. Sensor response tests revealed that CCTO films are sensitive to oxygen gas and exhibit n-type conductivity. These results demonstrate the versatility of CCTO thin film prepared by the PPM method for gas atmosphere or bias dependent resistance applications.

Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; La Roche, J. R.; Ren, F.; Pearton, S. J.

2004-03-01

Measurement of the electrical characteristics of 250 devices on the same 2 in. diameter wafer shows that Ti/Al/Ir/Au Ohmic contacts on AlGaN/GaN high electron mobility transistors (HEMTs) have lower average specific contact resistance after annealing at 850 °C for 30 s (4.6×10-5 Ω cm2) compared to more standard Ti/Al/Ni/Au contacts (2×10-4 Ω cm2). HEMTs with these Ir-based contacts also show average interdevice isolation currents approximately a factor of 2 lower, higher peak transconductance (134 mS/mm compared to 121 mS/mm), and higher device breakdown voltage (31 V compared to 23 V) than the devices with Ni-based contacts. This Ir-based contact metallurgy looks promising for applications requiring extended thermal stability of the HEMTs.

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

PubMed Central

2011-01-01

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

High performance advanced tokamak regimes in DIII-D for next-step experiments

NASA Astrophysics Data System (ADS)

Greenfield, C. M.; Murakami, M.; Ferron, J. R.; Wade, M. R.; Luce, T. C.; Petty, C. C.; Menard, J. E.; Petrie, T. W.; Allen, S. L.; Burrell, K. H.; Casper, T. A.; DeBoo, J. C.; Doyle, E. J.; Garofalo, A. M.; Gorelov, I. A.; Groebner, R. J.; Hobirk, J.; Hyatt, A. W.; Jayakumar, R. J.; Kessel, C. E.; La Haye, R. J.; Jackson, G. L.; Lohr, J.; Makowski, M. A.; Pinsker, R. I.; Politzer, P. A.; Prater, R.; Strait, E. J.; Taylor, T. S.; West, W. P.; DIII-D Team

2004-05-01

Advanced Tokamak (AT) research in DIII-D [K. H. Burrell for the DIII-D Team, in Proceedings of the 19th Fusion Energy Conference, Lyon, France, 2002 (International Atomic Energy Agency, Vienna, 2002) published on CD-ROM] seeks to provide a scientific basis for steady-state high performance operation in future devices. These regimes require high toroidal beta to maximize fusion output and poloidal beta to maximize the self-driven bootstrap current. Achieving these conditions requires integrated, simultaneous control of the current and pressure profiles, and active magnetohydrodynamic stability control. The building blocks for AT operation are in hand. Resistive wall mode stabilization via plasma rotation and active feedback with nonaxisymmetric coils allows routine operation above the no-wall beta limit. Neoclassical tearing modes are stabilized by active feedback control of localized electron cyclotron current drive (ECCD). Plasma shaping and profile control provide further improvements. Under these conditions, bootstrap supplies most of the current. Steady-state operation requires replacing the remaining Ohmic current, mostly located near the half radius, with noninductive external sources. In DIII-D this current is provided by ECCD, and nearly stationary AT discharges have been sustained with little remaining Ohmic current. Fast wave current drive is being developed to control the central magnetic shear. Density control, with divertor cryopumps, of AT discharges with edge localized moding H-mode edges facilitates high current drive efficiency at reactor relevant collisionalities. A sophisticated plasma control system allows integrated control of these elements. Close coupling between modeling and experiment is key to understanding the separate elements, their complex nonlinear interactions, and their integration into self-consistent high performance scenarios. Progress on this development, and its implications for next-step devices, will be illustrated by results of recent experiment and simulation efforts.

Global gyrokinetic simulations of intrinsic rotation in ASDEX Upgrade Ohmic L-mode plasmas

NASA Astrophysics Data System (ADS)

Hornsby, W. A.; Angioni, C.; Lu, Z. X.; Fable, E.; Erofeev, I.; McDermott, R.; Medvedeva, A.; Lebschy, A.; Peeters, A. G.; The ASDEX Upgrade Team

2018-05-01

Non-linear, radially global, turbulence simulations of ASDEX Upgrade (AUG) plasmas are performed and the nonlinear generated intrinsic flow shows agreement with the intrinsic flow gradients measured in the core of Ohmic L-mode plasmas at nominal parameters. Simulations utilising the kinetic electron model show hollow intrinsic flow profiles as seen in a predominant number of experiments performed at similar plasma parameters. In addition, significantly larger flow gradients are seen than in a previous flux-tube analysis (Hornsby et al 2017 Nucl. Fusion 57 046008). Adiabatic electron model simulations can show a flow profile with opposing sign in the gradient with respect to a kinetic electron simulation, implying a reversal in the sign of the residual stress due to kinetic electrons. The shaping of the intrinsic flow is strongly determined by the density gradient profile. The sensitivity of the residual stress to variations in density profile curvature is calculated and seen to be significantly stronger than to neoclassical flows (Hornsby et al 2017 Nucl. Fusion 57 046008). This variation is strong enough on its own to explain the large variations in the intrinsic flow gradients seen in some AUG experiments. Analysis of the symmetry breaking properties of the turbulence shows that profile shearing is the dominant mechanism in producing a finite parallel wave-number, with turbulence gradient effects contributing a smaller portion of the parallel wave-vector.

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

DOE PAGES

Klein, Brianna A.; Baca, Albert G.; Armstrong, Andrew M.; ...

2017-09-23

Here, we present a low resistance, straightforward planar ohmic contact for Al 0.45Ga 0.55N/Al 0.3Ga 0.7N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ c = 2.5 × 10 -5 Ω cm², sheet resistances of R SH = 3.9 kΩ/more » $$\\blacksquare$$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al 0.45Ga 0.55N/Al 0.3Ga 0.7N HEMTs.« less

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klein, Brianna A.; Baca, Albert G.; Armstrong, Andrew M.

Here, we present a low resistance, straightforward planar ohmic contact for Al 0.45Ga 0.55N/Al 0.3Ga 0.7N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ c = 2.5 × 10 -5 Ω cm², sheet resistances of R SH = 3.9 kΩ/more » $$\\blacksquare$$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al 0.45Ga 0.55N/Al 0.3Ga 0.7N HEMTs.« less

Thermally stable ohmic contacts to n-type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts

NASA Astrophysics Data System (ADS)

Murakami, Masanori; Price, W. H.; Norcott, M.; Hallali, P.-E.

1990-09-01

The effects of Si or Ge addition to NiInW ohmic contacts on their electrical behavior were studied, where the samples were prepared by evaporating Ni(Si) or Ni(Ge) pellets with In and W and annealed by a rapid thermal annealing method. An addition of Si affected the contact resistances of NiInW contacts: the resistances decreased with increasing the Si concentrations in the Ni(Si) pellets and the lowest value of ˜0.1 Ω mm was obtained in the contact prepared with the Ni-5 at. % Si pellets after annealing at temperatures around 800 °C. The contact resistances did not deteriorate during isothermal annealing at 400 °C for more than 100 h, far exceeding process requirements for self-aligned GaAs metal-semiconductor field-effect-transistor devices. In addition, the contacts were compatible with TiAlCu interconnects which have been widely used in the current Si process. Furthermore, the addition of Si to the NiInW contacts eliminated an annealing step for activation of implanted dopants and low resistance (˜0.2 Ω mm) contacts were fabricated for the first time by a ``one-step'' anneal. In contrast, an addition of Ge to the NiInW contacts did not significantly reduce the contact resistances.

Low-resistance 2D/2D ohmic contacts: A universal approach to high-performance WSe 2, MoS 2, and MoSe 2 transistors

DOE PAGES

Chuang, Hsun -Jen; Chamlagain, Bhim; Koehler, Michael; ...

2016-02-04

Here, we report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no intentional doping as channel materials. We demonstrate that few-layer WSe 2 field-effect transistors (FETs) with 2D/2D contacts exhibit low contact resistances of ~0.3 kΩ μm, high on/off ratios up to >10 9, and high drive currents exceeding 320 μA μm –1. These favorable characteristics are combined with a two-terminal field-effect hole mobility μ FE ≈ 2 × 10 2 cm 2 V –1 smore » –1 at room temperature, which increases to >2 × 10 3 cm 2 V –1 s –1 at cryogenic temperatures. We observe a similar performance also in MoS 2 and MoSe 2 FETs with 2D/2D drain and source contacts. The 2D/2D low-resistance ohmic contacts presented here represent a new device paradigm that overcomes a significant bottleneck in the performance of TMDs and a wide variety of other 2D materials as the channel materials in postsilicon electronics.« less

Transport and Junction Physics of Semiconductor-Metal Eutectic Composites

DTIC Science & Technology

1988-06-01

eutectic junction and includes the method for making contacts as well as current-voltage (I-V), capacitance- voltage (C-V), and electron-beam-induced current...junction was performed with another RTA at 8000C to 9000C for 10 s. This technique also worked well to provide the necessary ohmic contact. The necessary...solid state diffusion of Ta and Si. The diode is well behaved, with an ideality factor n = 1.10 ± 0.05. Deviation from the straight line forward

Unipolar induction in the magnetosphere

NASA Technical Reports Server (NTRS)

Stern, D. P.

1972-01-01

A theory is described for the production of electric currents in the magnetosphere and for the transfer of energy from the solar wind to the magnetosphere. Assuming that the magnetosheath has ohmic-type conduction properties, it is shown that unipolar induction can energize several current flows, explaining the correlation of the east-west component of the interplanetary magnetic field with polar electric fields and polar magnetic variations. In the tail region, unipolar induction can account for effects correlated with the north-south component of the interplanetary magnetic field.

Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes

NASA Astrophysics Data System (ADS)

Wu, Ning; Xiong, Zhihua; Qin, Zhenzhen

2018-02-01

By investigating the effect of a defective interface structure on Ag-based Ohmic contact of GaN-based vertical light-emitting diodes, we found a direct relationship between the interfacial composition and the Schottky barrier height of the Ag(111)/GaN(0001) interface. It was demonstrated that the Schottky barrier height of a defect-free Ag(111)/GaN(0001) interface was 2.221 eV, and it would be dramatically decreased to 0.375 eV with the introduction of one Ni atom and one Ga vacancy at the interface structure. It was found that the tunability of the Schottky barrier height can be attributed to charge accumulations around the interfacial defective regions and an unpinning of the Fermi level, which explains the experimental phenomenon of Ni-assisted annealing improving the p-type Ohmic contact characteristic. Lastly, we propose a new method of using Cu as an assisted metal to realize a novel Ag-based Ohmic contact. These results provide a guideline for the fabrication of high-quality Ag-based Ohmic contact of GaN-based vertical light-emitting diodes.

Axial p-n junction and space charge limited current in single GaN nanowire.

PubMed

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-05

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Current-voltage characteristics of the semiconductor nanowires under the metal-semiconductor-metal structure

NASA Astrophysics Data System (ADS)

Wen, Jing; Zhang, Xitian; Gao, Hong; Wang, Mingjiao

2013-12-01

We present a method to calculate the I-V characteristics of semiconductor nanowires under the metal-semiconductor-metal (MSM) structure. The carrier concentration as an important parameter is introduced into the expression of the current. The subband structure of the nanowire has been considered for associating it with the position of the Fermi level and circumventing the uncertainties of the contact areas in the contacts. The tunneling and thermionic emission currents in the two Schottky barriers at the two metal-semiconductor contacts are discussed. We find that the two barriers have different influences on the I-V characteristics of the MSM structure, one of which under the forward bias plays the role of threshold voltage if its barrier height is large and the applied voltage is small, and the other under the reverse bias controls the shapes of I-V curves. Our calculations show that the shapes of the I-V curves for the MSM structure are mainly determined by the barrier heights of the contacts and the carrier concentration. The nearly identical I-V characteristics can be obtained by using different values of the barrier heights and carrier concentration, which means that the contact type conversion can be ascribed not only to the changes of the barrier heights but also that of the carrier concentration. We also discuss the mechanisms of the ohmic-Schottky conversions and clarify the ambiguity in the literature. The possibility about the variation of the carrier concentration under the applied fields has been confirmed by experimental results.

Axial p-n junction and space charge limited current in single GaN nanowire

NASA Astrophysics Data System (ADS)

Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

2018-01-01

The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

Effect of reflective p-type ohmic contact on thermal reliability of vertical InGaN/GaN LEDs

NASA Astrophysics Data System (ADS)

Son, Jun Ho; Song, Yang Hee; Kim, Buem Joon; Lee, Jong-Lam

2014-11-01

We report on the enhanced thermal reliability of vertical-LEDs (VLEDs) using novel reflective p-type ohmic contacts with good thermal stability. The reflective p-type ohmic contacts with Ni/Ag-Cu alloy multi-layer structure shows low contact resistivity, as low as 9.3 × 10-6 Ωcm2, and high reflectance of 86% after annealing at 450°C. The V-LEDs with Ni/Ag-Cu alloy multi-layer structure show good thermal reliability with stress time at 300°C in air ambient. The improved thermal stability of the reflective ohmic contacts to p-type GaN is believed to play a critical role in the thermal reliability of V-LEDs. [Figure not available: see fulltext.

Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

DOE PAGES

Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; ...

2015-04-27

We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

Features of Stationary Photoconductivity of High-Ohmic Semiconductors Under Local Illumination

NASA Astrophysics Data System (ADS)

Lysenko, A. P.; Belov, A. G.; Kanevskii, V. E.; Odintsova, E. A.

2018-04-01

Photoconductivity has been thoroughly studied for a long time. However, most researchers have examined photoconductivity of semiconductors while illuminating the entire surface of samples. The present paper examines the effect of local exposure that ensures a high level of injection of free charge carriers upon the conductivity of high-ohmic cadmium telluride and semi-insulating gallium arsenide samples and upon the properties of ohmic contacts to samples. The authors found that regardless of the exposure area the value of transition resistance of ohmic contacts decreases and the concentration of the main charge carriers increases in the sample in proportion to radiation intensity. This research uncovered a number of previously unknown effects that are interesting from the physical point of view. This paper focuses on discussing these effects.

Laser method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, Jagdish

1981-01-01

This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Method for forming low-resistance ohmic contacts on semiconducting oxides

DOEpatents

Narayan, J.

1979-10-01

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Numerical study of MHD micropolar carreau nanofluid in the presence of induced magnetic field

NASA Astrophysics Data System (ADS)

Atif, S. M.; Hussain, S.; Sagheer, M.

2018-03-01

The heat and mass transfer of a magnetohydrodynamic micropolar Carreau nanofluid on a stretching sheet has been analyzed in the presence of induced magnetic field. An internal heating, thermal radiation, Ohmic and viscous dissipation effects are also considered. The system of the governing partial differential equations is converted into the ordinary differential equations by means of the suitable similarity transformation. The resulting ordinary differential equations are then solved by the well known shooting technique. The impact of emerging physical parameters on the velocity, angular velocity, temperature and concentration profiles are analyzed graphically. The dimensionless velocity is enhanced for the Weissenberg number and the power law index while reverse situation is studied in the thermal and the concentration profile.

A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

PubMed Central

Chen, Dajing; Lei, Sheng; Chen, Yuquan

2011-01-01

A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Edge ohmic heating and improved confinement on HT-6M Tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, X.

1995-04-01

An improved confinement has been observed on HT-6M tokamak after application of Edge Ohmic Heating (EOH) which makes plasma current rapidly ramp up from an initial steady state (I{sub p}=55 kA) within a small time scale (0.4 ms) to a second steady state (I{sub p}=60 kA) with a ramp rate of 12 MA/sec. The improved confinement is characterized by (a) increased average density n{sub e}; (b) reduced H{sub alpha} radiation; (c) reduced density fluctuations both in the center and at the edge; (d) a steeper n{sub e} and T{sub e} profile at the edge; (e) the changed profiles of plasmamore » parameters n{sub e}(r), q(r) and j(r); (f) transferred the oscillation modes of the soft-X ray signals from Mirnov fluctuation (12 kHz) to sawtooth oscillation (1.7 kHz). The changes of edge fluctuation, radial electric field and bremsstrahlung during EOH were measured and discussed in details. The measured values of {beta}{sub p}+l{sub i}/2 and soft-X ray sawtooth inversion radius implied the anomalous current penetration. 10 refs., 2 figs.« less

Ohmic model for electrodeposition of metallic ions

NASA Astrophysics Data System (ADS)

Gliozzi, A. S.; Alexe-Ionescu, A. L.; Barbero, G.

2015-10-01

An ohmic model to describe the electrodeposition of metallic ions on the electrodes is proposed. We assume that the ionic distribution is homogeneous across the electrolytic cell, and that the ionic current is due to the bulk electric field. The nucleation in the electrodeposition is supposed to be well described by a kinetic equation at the electrode, taking into account the neutralization of metallic ions on the electrodes. Two cases are considered. In the first case the characteristic time describing the neutralization of the ions is supposed to be negligible with respect to the flight time of the ions across the cell. In this framework the bulk electric field coincides with the external electric field, and our analysis gives analytical formulae for the surface density of deposited ions and for the electric current in the external circuit. The case where the two characteristic times are comparable, and the effective electric field in the bulk depends on the surface deposition, is considered too. In this case the ordinary differential equations describing the ionic distribution and the adsorption phenomenon have to be solved numerically. The agreement between the presented model and the experimental results published by several groups is reasonably good.

Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek

2014-01-21

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

NASA Astrophysics Data System (ADS)

Virshup, Ariel R.

With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Development of internal magnetic probe for current density profile measurement in Versatile Experiment Spherical Torus

NASA Astrophysics Data System (ADS)

Yang, J.; Lee, J. W.; Jung, B. K.; Chung, K. J.; Hwang, Y. S.

2014-11-01

An internal magnetic probe using Hall sensors to measure a current density profile directly with perturbation of less than 10% to the plasma current is successfully operated for the first time in Versatile Experiment Spherical Torus (VEST). An appropriate Hall sensor is chosen to produce sufficient signals for VEST magnetic field while maintaining the small size of 10 mm in outer diameter. Temperature around the Hall sensor in a typical VEST plasma is regulated by blown air of 2 bars. First measurement of 60 kA VEST ohmic discharge shows a reasonable agreement with the total plasma current measured by Rogowski coil in VEST.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lingyan, E-mail: l.y.wang@mail.xjtu.edu.cn, E-mail: wren@mail.xjtu.edu.cn; Ren, Wei, E-mail: l.y.wang@mail.xjtu.edu.cn, E-mail: wren@mail.xjtu.edu.cn; Shi, Peng

Lead-free ferroelectric un-doped and doped K{sub 0.5}Na{sub 0.5}NbO{sub 3} (KNN) films with different amounts of manganese (Mn) were prepared by a chemical solution deposition method. The thicknesses of all films are about 1.6 μm. Their phase, microstructure, leakage current behavior, and electrical properties were investigated. With increasing the amounts of Mn, the crystallinity became worse. Fortunately, the electrical properties were improved due to the decreased leakage current density after Mn-doping. The study on leakage behaviors shows that the dominant conduction mechanism at low electric field in the un-doped KNN film is ohmic mode and that at high electric field is space-charge-limitedmore » and Pool-Frenkel emission. After Mn doping, the dominant conduction mechanism at high electric field of KNN films changed single space-charge-limited. However, the introduction of higher amount of Mn into the KNN film would lead to a changed conduction mechanism from space-charge-limited to ohmic mode. Consequently, there exists an optimal amount of Mn doping of 2.0 mol. %. The 2.0 mol. % Mn doped KNN film shows the lowest leakage current density and the best electrical properties. With the secondary ion mass spectroscopies and x-ray photoelectron spectroscopy analyses, the homogeneous distribution in the KNN films and entrance of Mn element in the lattice of KNN perovskite structure were also confirmed.« less

Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

PubMed

Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

2010-10-01

Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (p<0.05) lighter surface-colours (63.05 (LTLT) and 62.26 (HTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (p<0.05) lower for LTLT samples (29.3%) compared to the other meats (36.3 and 33.8%). Sensory studies largely confirmed these observations. Cook values were lower for LTLT (3.05) while HTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

High beta plasma operation in a toroidal plasma producing device

DOEpatents

Clarke, John F.

1978-01-01

A high beta plasma is produced in a plasma producing device of toroidal configuration by ohmic heating and auxiliary heating. The plasma pressure is continuously monitored and used in a control system to program the current in the poloidal field windings. Throughout the heating process, magnetic flux is conserved inside the plasma and the distortion of the flux surfaces drives a current in the plasma. As a consequence, the total current increases and the poloidal field windings are driven with an equal and opposing increasing current. The spatial distribution of the current in the poloidal field windings is determined by the plasma pressure. Plasma equilibrium is maintained thereby, and high temperature, high beta operation results.

Electron cyclotron heating and core intrinsic rotation reversal in DIII-D

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grassie, J. S. de, E-mail: degrassie@fusion.gat.com; Boedo, J. A.; Grierson, B. A.

2015-12-10

The effect of electron cyclotron heating (ECH) on the intrinsic rotation profile in DIII-D is shown experimentally. Former DIII-D experiments have shown that ECH tends to cause an interior reduction in the normally co-Ip directed intrinsic rotation profile, and this core rotation can be fully reversed to the opposite direction. This effect is due to a turbulent rearrangement of the interior rotation profile. Here, we show results that there is more than one mechanism causing this. We compare two low density L-mode discharges where the only operational difference is the location of the ECH deposition. At low ECH power, comparablemore » to the Ohmic power, the primary change is in the q-profile accompanied by a reversal of the core intrinsic rotation direction for the more off-axis deposition. The change in the shear of the q-profile fits well with a recent theoretical prediction for this rotation reversal. At higher ECH power, the primary change is in the core electron temperature, Te, accompanied by a hollowing of the rotation profile near the magnetic axis. This effect appears to be due to the change in electron collisionality, consistent with another theoretical, gyrokinetic prediction. The variety of phenomena that could allow ECH to modify the intrinsic rotation profile give some expectation that regions of large velocity shear in the interior could be generated, with the possibility of triggering internal transport barriers.« less

PUMPS FOR LIQUID CURRENT-CONDUCTING MATERIAL

DOEpatents

Watt, D.A.

1958-12-23

An induction-type liquid conductor pump is described wherein the induced current flow is substantially tnansverse to the flow of the liquid in the duct, thus eliminating parallel current flow that tends to cause unwanted pressures resulting in turbulence, eddy-flow, heating losses, and reduced pumping efficiency. This improvement is achieved by offering the parallel current a path of lower impedance along the duct than that offered by the liquid so that the induced currents remaining in the liquid flow in a substantially transverse directlon. Thick copper bars are brazed to the liquid duct parallel to the flow, and additional induced currents are created in the copper bars of appropriate magnitude to balance the ohmic drop ln the current paths outside of the liquid metal.

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

NASA Astrophysics Data System (ADS)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2018-05-01

This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

Lignin as a Binder Material for Eco-Friendly Li-Ion Batteries

PubMed Central

Lu, Huiran; Cornell, Ann; Alvarado, Fernando; Behm, Mårten; Leijonmarck, Simon; Li, Jiebing; Tomani, Per; Lindbergh, Göran

2016-01-01

The industrial lignin used here is a byproduct from Kraft pulp mills, extracted from black liquor. Since lignin is inexpensive, abundant and renewable, its utilization has attracted more and more attention. In this work, lignin was used for the first time as binder material for LiFePO4 positive and graphite negative electrodes in Li-ion batteries. A procedure for pretreatment of lignin, where low-molecular fractions were removed by leaching, was necessary to obtain good battery performance. The lignin was analyzed for molecular mass distribution and thermal behavior prior to and after the pretreatment. Electrodes containing active material, conductive particles and lignin were cast on metal foils, acting as current collectors and characterized using scanning electron microscopy (SEM), electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge cycles. Good reversible capacities were obtained, 148 mAh·g−1 for the positive electrode and 305 mAh·g−1 for the negative electrode. Fairly good rate capabilities were found for both the positive electrode with 117 mAh·g−1 and the negative electrode with 160 mAh·g−1 at 1C. Low ohmic resistance also indicated good binder functionality. The results show that lignin is a promising candidate as binder material for electrodes in eco-friendly Li-ion batteries. PMID:28773252

Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2017-10-01

While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

Ohmic Inflation of Hot Jupiters: an Analytical Approach

NASA Astrophysics Data System (ADS)

Ginzburg, Sivan; Sari, Re'em

2015-12-01

Many giant exoplanets in close orbits have observed radii which exceed theoretical predictions.One suggested explanation for this discrepancy is heat deposited deep inside the atmospheres of these hot Jupiters.We present an analytical model for the evolution of such irradiated, and internally heated gas giants, and derive scaling laws for their cooling rates and radii.We estimate the Ohmic dissipation resulting from the interaction between the atmospheric winds and the planet's magnetic field, and apply our model to Ohmically heated planets.Our model can account for the observed radii of many inflated planets, but not the most extreme ones.We show that Ohmically heated planets have already reached their equilibrium phase and they no longer contract.We show that it is possible to re-inflate planets, but we confirm that re-heating timescales are longer by about a factor of 30 than cooling times.

Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

NASA Astrophysics Data System (ADS)

Sung Park, Pil; Reddy, Kongara M.; Nath, Digbijoy N.; Yang, Zhichao; Padture, Nitin P.; Rajan, Siddharth

2013-04-01

A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future.

Effect of Frequency and Waveform on Inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in Salsa by Ohmic Heating

PubMed Central

Lee, Su-Yeon; Ryu, Sangryeol

2013-01-01

The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform. PMID:23023752

Self-consistent modeling of terahertz waveguide and cavity with frequency-dependent conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Y. J.; Chu, K. R., E-mail: krchu@yahoo.com.tw; Thumm, M.

The surface resistance of metals, and hence the Ohmic dissipation per unit area, scales with the square root of the frequency of an incident electromagnetic wave. As is well recognized, this can lead to excessive wall losses at terahertz (THz) frequencies. On the other hand, high-frequency oscillatory motion of conduction electrons tends to mitigate the collisional damping. As a result, the classical theory predicts that metals behave more like a transparent medium at frequencies above the ultraviolet. Such a behavior difference is inherent in the AC conductivity, a frequency-dependent complex quantity commonly used to treat electromagnetics of metals at opticalmore » frequencies. The THz region falls in the gap between microwave and optical frequencies. However, metals are still commonly modeled by the DC conductivity in currently active vacuum electronics research aimed at the development of high-power THz sources (notably the gyrotron), although a small reduction of the DC conductivity due to surface roughness is sometimes included. In this study, we present a self-consistent modeling of the gyrotron interaction structures (a metallic waveguide or cavity) with the AC conductivity. The resulting waveguide attenuation constants and cavity quality factors are compared with those of the DC-conductivity model. The reduction in Ohmic losses under the AC-conductivity model is shown to be increasingly significant as the frequency reaches deeper into the THz region. Such effects are of considerable importance to THz gyrotrons for which the minimization of Ohmic losses constitutes a major design consideration.« less

Effect of frequency and waveform on inactivation of Escherichia coli O157:H7 and Salmonella enterica Serovar Typhimurium in salsa by ohmic heating.

PubMed

Lee, Su-Yeon; Ryu, Sangryeol; Kang, Dong-Hyun

2013-01-01

The effect of frequency of alternating current during ohmic heating on electrode corrosion, heating rate, inactivation of food-borne pathogens, and quality of salsa was investigated. The impact of waveform on heating rate was also investigated. Salsa was treated with various frequencies (60 Hz to 20 kHz) and waveforms (sine, square, and sawtooth) at a constant electric field strength of 12.5 V/cm. Electrode corrosion did not occur when the frequency exceeded 1 kHz. The heating rate of the sample was dependent on frequency up to 500 Hz, but there was no significant difference (P > 0.05) in the heating rate when the frequency was increased above 1 kHz. The electrical conductivity of the sample increased with a rise in the frequency. At a frequency of 60 Hz, the square wave produced a lower heating rate than that of sine and sawtooth waves. The heating rate between waveforms was not significantly (P > 0.05) different when the frequency was >500 Hz. As the frequency increased, the treatment time required to reduce Escherichia coli O157:H7 and Salmonella enterica serovar Typhimurium to below the detection limit (1 log CFU/g) decreased without affecting product quality. These results suggest that ohmic heating can be effectively used to pasteurize salsa and that the effect of inactivation is dependent on frequency and electrical conductivity rather than waveform.

Inductive ion acceleration and heating in picket fence geometry: Theory and simulations

NASA Astrophysics Data System (ADS)

Leboeuf, J. N.; Dawson, J. M.; Ratliff, S. T.; Rhodes, M.; Luhmann, N. C., Jr.

1982-11-01

Particle simulations and analytic theory confirm the experimental observation of preferential ion acceleration and heating by an inductive electric field Edc in picket-fence geometry. The ions which are unmagnetized over most of the current channel are freely accelerated by the inductive field; the magnetized electrons are tied to the field lines and do not run away as long as the binding ev×B/c force is greater than the detrapping inductive force eEdc. Consequently, most of the current is carried by the ions which are also Ohmically heated.

Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

PubMed

Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

2013-11-13

Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System

NASA Astrophysics Data System (ADS)

Lai, Bo-Ting; Lee, Ching-Ting; Hong, Jhen-Dong; Yao, Shiau-Lu; Liu, Day-Shan

2010-08-01

The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO-indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.

Magnetoresistance effect in Fe{sub 20}Ni{sub 80}/graphene/Fe{sub 20}Ni{sub 80} vertical spin valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Entani, Shiro, E-mail: entani.shiro@qst.go.jp; Naramoto, Hiroshi; Sakai, Seiji

2016-08-22

Vertical spin valve devices with junctions of single- and bi-layer graphene interlayers sandwiched with Fe{sub 20}Ni{sub 80} (Permalloy) electrodes were fabricated by exploiting the direct growth of graphene on the Permalloy. The linear current-voltage characteristics indicated that ohmic contacts were realized at the interfaces. The systematic characterization revealed the significant modification of the electronic state of the interfacial graphene layer on the Permalloy surface, which indicates the strong interactions at the interface. The ohmic transport was attributable to the strong interface-interaction. The vertical resistivity of the graphene interlayer and the spin asymmetry coefficient at the graphene/Permalloy interface were obtained tomore » be 0.13 Ω cm and 0.06, respectively. It was found that the strong interface interaction modifies the electronic structure and metallic properties in the vertical spin valve devices with bi-layer graphene as well as single-layer graphene.« less

Measurements of the toroidal torque balance of error field penetration locked modes

DOE PAGES

Shiraki, Daisuke; Paz-Soldan, Carlos; Hanson, Jeremy M.; ...

2015-01-05

Here, detailed measurements from the DIII-D tokamak of the toroidal dynamics of error field penetration locked modes under the influence of slowly evolving external fields, enable study of the toroidal torques on the mode, including interaction with the intrinsic error field. The error field in these low density Ohmic discharges is well known based on the mode penetration threshold, allowing resonant and non-resonant torque effects to be distinguished. These m/n = 2/1 locked modes are found to be well described by a toroidal torque balance between the resonant interaction with n = 1 error fields, and a viscous torque inmore » the electron diamagnetic drift direction which is observed to scale as the square of the perturbed field due to the island. Fitting to this empirical torque balance allows a time-resolved measurement of the intrinsic error field of the device, providing evidence for a time-dependent error field in DIII-D due to ramping of the Ohmic coil current.« less

Flexible carbon-based ohmic contacts for organic transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik (Inventor)

2007-01-01

The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

NASA Astrophysics Data System (ADS)

Gu, Wen; Xu, Tao; Zhang, Jianhua

2013-11-01

Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.

Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

NASA Astrophysics Data System (ADS)

Chen, C.; Yang, Y. C.; Zeng, F.; Pan, F.

2010-08-01

Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.

Cooling a magnetic nanoisland by spin-polarized currents.

PubMed

Brüggemann, J; Weiss, S; Nalbach, P; Thorwart, M

2014-08-15

We investigate cooling of a vibrational mode of a magnetic quantum dot by a spin-polarized tunneling charge current exploiting the magnetomechanical coupling. The spin-polarized current polarizes the magnetic nanoisland, thereby lowering its magnetic energy. At the same time, Ohmic heating increases the vibrational energy. A small magnetomechanical coupling then permits us to remove energy from the vibrational motion and cooling is possible. We find a reduction of the vibrational energy below 50% of its equilibrium value. The lowest vibration temperature is achieved for a weak electron-vibration coupling and a comparable magnetomechanical coupling. The cooling rate increases at first with the magnetomechanical coupling and then saturates.

Hawaii Energy and Environmental Technologies (HEET) Initiative

DTIC Science & Technology

2009-05-01

current density measured in a PEM fuel cell ( PEMFC ) represents the average of the local reaction rates. Depending on cell design and operating...loss mechanisms determine the spatial and overall performance of a PEMFC : activation, concentration, ohmic, and mass transfer losses. Activation losses...distribution of these various losses in a PEMFC using a six-channel serpentine flow-field. Voltage losses were attributed to each of the mechanisms at each

Exact Magnetic Diffusion Solutions for Magnetohydrodynamic Code Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, D S

In this paper, the authors present several new exact analytic space and time dependent solutions to the problem of magnetic diffusion in R-Z geometry. These problems serve to verify several different elements of an MHD implementation: magnetic diffusion, external circuit time integration, current and voltage energy sources, spatially dependent conductivities, and ohmic heating. The exact solutions are shown in comparison with 2D simulation results from the Ares code.

LETTER: ECH pre-ionization and assisted startup in the fully superconducting KSTAR tokamak using second harmonic

NASA Astrophysics Data System (ADS)

Bae, Y. S.; Jeong, J. H.; Park, S. I.; Joung, M.; Kim, J. H.; Hahn, S. H.; Yoon, S. W.; Yang, H. L.; Kim, W. C.; Oh, Y. K.; England, A. C.; Namkung, W.; Cho, M. H.; Jackson, G. L.; Bak, J. S.; KSTAR Team

2009-02-01

This letter reports on the successful demonstration of the second harmonic electron cyclotron heating (ECH)-assisted startup in the first plasma experiments recently completed in the fully superconducting Korea Superconducting Tokamak Advanced Research (KSTAR) device whose major and minor radii are 1.8 m and 0.5 m, respectively. For the second harmonic ECH-assisted startup, an 84 GHz EC wave at 0.35 MW was launched before the onset of the toroidal electric field of the Ohmic system. And it was observed that this was sufficient to achieve breakdown in the ECH pre-ionization phase, allow burn-through and sustain the plasma during the current ramp with a low loop voltage of 2.0 V and a corresponding toroidal electric field of 0.24 V m-1at the innermost vacuum vessel wall (R = 1.3 m). This is a lower value than 0.3 Vm-1 which is the maximum electric field in ITER. Due to the limited volt-seconds and the loop voltage of the Ohmic power system, the extended pulse duration of the ECH power up to 180 ms allowed the plasma current to rise up to more than 100 kA with a ramp-up rate of 0.8 MA s-1.

Electrostatically Gated Graphene-Zinc Oxide Nanowire Heterojunction.

PubMed

You, Xueqiu; Pak, James Jungho

2015-03-01

This paper presents an electrostatically gated graphene-ZnO nanowire (NW) heterojunction for the purpose of device applications for the first time. A sub-nanometer-thick energy barrier width was formed between a monatomic graphene layer and electrochemically grown ZnO NWs. Because of the narrow energy barrier, electrons can tunnel through the barrier when a voltage is applied across the junction. A near-ohmic current-voltage (I-V) curve was obtained from the graphene-electrochemically grown ZnO NW heterojunction. This near-ohmic contact changed to asymmetric I-V Schottky contact when the samples were exposed to an oxygen environment. It is believed that the adsorbed oxygen atoms or molecules on the ZnO NW surface capture free electrons of the ZnO NWs, thereby creating a depletion region in the ZnO NWs. Consequentially, the electron concentration in the ZnO NWs is dramatically reduced, and the energy barrier width of the graphene-ZnO NW heterojunction increases greatly. This increased energy barrier width reduces the electron tunneling probability, resulting in a typical Schottky contact. By adjusting the back-gate voltage to control the graphene-ZnO NW Schottky energy barrier height, a large modulation on the junction current (on/off ratio of 10(3)) was achieved.

Development of the striation and filament form of the electrothermal instability

NASA Astrophysics Data System (ADS)

Yu, Edmund; Awe, T. J.; Yelton, W. G.; McKenzie, B. B.; Peterson, K. J.; Bauer, B. S.; Hutchinson, T. M.; Fuelling, S.; Yates, K. C.; Shipley, G.

2017-10-01

Magnetically imploded liners have broad application to ICF, dynamic material property studies, and flux compression. An important consideration in liner performance is the electrothermal instability (ETI), an Ohmic heating instability that manifests in 2 ways: assuming vertical current flow, ETI forms hot, horizontal bands (striations) in metals, and vertical filaments in plasmas. Striations are especially relevant in that they can develop into density perturbations, which then couple to the dangerous magneto Rayleigh-Taylor (MRT) instability during liner acceleration. Recent visible emission images of Ohmically heated rods show evidence of both the striation and filament form of ETI, suggesting several questions: (1) can simulation qualitatively reproduce the data? (2) If so, what seeds the striation ETI, and how does it transition to filaments? (3) Does the striation develop into a strong density perturbation, important for MRT? In this work, we use analytic theory and 3D MHD simulation to study how isolated resistive inclusions, embedded in a perfectly smooth rod and communicating through current redistribution, can be used to address the above questions. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia LLC, a wholly owned subsidiary of Honeywell International Inc. for the U.S. DOE NNSA under contract DE-NA0003525.

Silver Nanowire Transparent Conductive Electrodes for High-Efficiency III-Nitride Light-Emitting Diodes

PubMed Central

Oh, Munsik; Jin, Won-Yong; Jun Jeong, Hyeon; Jeong, Mun Seok; Kang, Jae-Wook; Kim, Hyunsoo

2015-01-01

Silver nanowires (AgNWs) have been successfully demonstrated to function as next-generation transparent conductive electrodes (TCEs) in organic semiconductor devices owing to their figures of merit, including high optical transmittance, low sheet resistance, flexibility, and low-cost processing. In this article, high-quality, solution-processed AgNWs with an excellent optical transmittance of 96.5% at 450 nm and a low sheet resistance of 11.7 Ω/sq were demonstrated as TCEs in inorganic III-nitride LEDs. The transmission line model applied to the AgNW contact to p-GaN showed that near ohmic contact with a specific contact resistance of ~10−3 Ωcm2 was obtained. The contact resistance had a strong bias-voltage (or current-density) dependence: namely, field-enhanced ohmic contact. LEDs fabricated with AgNW electrodes exhibited a 56% reduction in series resistance, 56.5% brighter output power, a 67.5% reduction in efficiency droop, and a approximately 30% longer current spreading length compared to LEDs fabricated with reference TCEs. In addition to the cost reduction, the observed improvements in device performance suggest that the AgNWs are promising for application as next-generation TCEs, to realise brighter, larger-area, cost-competitive inorganic III-nitride light emitters. PMID:26333768

Red Light Emitting Schottky Diodes on p-TYPE GaN/AlN/Si(111) Substrate

NASA Astrophysics Data System (ADS)

Chuah, L. S.; Hassan, Z.; Abu Hassan, H.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4-5) × 1020 cm-3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current-voltage (I-V) system, the heights of barriers determined from the I-V measurements were found to be related to the electroluminescence.

The impact of nanocontact on nanowire based nanoelectronics.

PubMed

Lin, Yen-Fu; Jian, Wen-Bin

2008-10-01

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.

Low noise constant current source for bias dependent noise measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talukdar, D.; Bose, Suvendu; Bardhan, K. K.

2011-01-15

A low noise constant current source used for measuring the 1/f noise in disordered systems in ohmic as well as nonohmic regime is described. The source can supply low noise constant current starting from as low as 1 {mu}A to a few tens of milliampere with a high voltage compliance limit of around 20 V. The constant current source has several stages, which can work in a standalone manner or together to supply the desired value of load current. The noise contributed by the current source is very low in the entire current range. The fabrication of a low noisemore » voltage preamplifier modified for bias dependent noise measurements and based on the existing design available in the MAT04 data sheet is also described.« less

Demonstration of Tokamak Ohmic Flux Saving by Transient Coaxial Helicity Injection in the National Spherical Torus Experiment

NASA Astrophysics Data System (ADS)

Raman, R.; Mueller, D.; Nelson, B. A.; Jarboe, T. R.; Gerhardt, S.; Kugel, H. W.; Leblanc, B.; Maingi, R.; Menard, J.; Ono, M.; Paul, S.; Roquemore, L.; Sabbagh, S.; Soukhanovskii, V.

2010-03-01

Transient coaxial helicity injection (CHI) started discharges in the National Spherical Torus Experiment (NSTX) have attained peak currents up to 300 kA and when coupled to induction, it has produced up to 200 kA additional current over inductive-only operation. CHI in NSTX has shown to be energetically quite efficient, producing a plasma current of about 10 A/J of capacitor bank energy. In addition, for the first time, the CHI-produced toroidal current that couples to induction continues to increase with the energy supplied by the CHI power supply at otherwise similar values of the injector flux, indicating the potential for substantial current generation capability by CHI in NSTX and in future toroidal devices.

Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, C., E-mail: csung@physics.ucla.edu; White, A. E.; Greenwald, M.

2016-04-15

Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local,more » electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].« less

Ohmic contacts to semiconducting diamond

NASA Astrophysics Data System (ADS)

Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

1990-10-01

Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

Dramatically enhanced non-Ohmic properties and maximum stored energy density in ceramic-metal nanocomposites: CaCu3Ti4O12/Au nanoparticles

PubMed Central

2013-01-01

Non-Ohmic and dielectric properties of a novel CaCu3Ti4O12/Au nanocomposite were investigated. Introduction of 2.5 vol.% Au nanoparticles in CaCu3Ti4O12 ceramics significantly reduced the loss tangent while its dielectric permittivity remained unchanged. The non-Ohmic properties of CaCu3Ti4O12/Au (2.5 vol.%) were dramatically improved. A nonlinear coefficient of ≈ 17.7 and breakdown electric field strength of 1.25 × 104 V/m were observed. The maximum stored energy density was found to be 25.8 kJ/m3, which is higher than that of pure CaCu3Ti4O12 by a factor of 8. Au addition at higher concentrations resulted in degradation of dielectric and non-Ohmic properties, which is described well by percolation theory. PMID:24257060

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminska, E.; Piotrowska, A.; Barcz, A.

2000-11-27

We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by suchmore » a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.« less

Ohmic contacts to Al-rich AlGaN heterostructures

DOE PAGES

Douglas, E. A.; Reza, S.; Sanchez, C.; ...

2017-06-06

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Evaluation of non-thermal effects of electricity on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating.

PubMed

Jaeschke, Débora Pez; Marczak, Ligia Damasceno Ferreira; Mercali, Giovana Domeneghini

2016-05-15

The effect of electric field on ascorbic acid and carotenoid degradation in acerola pulp during ohmic heating was evaluated. Ascorbic acid kinetic degradation was evaluated at 80, 85, 90 and 95°C during 60 min of thermal treatment by ohmic and conventional heating. Carotenoid degradation was evaluated at 90 and 95°C after 50 min of treatment. The different temperatures evaluated showed the same effect on degradation rates. To investigate the influence of oxygen concentration on the degradation process, ohmic heating was also carried out under rich and poor oxygen modified atmospheres at 90°C. Ascorbic acid and carotenoid degradation was higher under a rich oxygen atmosphere, indicating that oxygen is the limiting reagent of the degradation reaction. Ascorbic acid and carotenoid degradation was similar for both heating technologies, demonstrating that the presence of the oscillating electric field did not influence the mechanisms and rates of reactions associated with the degradation process. Copyright © 2015 Elsevier Ltd. All rights reserved.

Electrical memory characteristics of a nondoped pi-conjugated polymer bearing carbazole moieties.

PubMed

Park, Samdae; Lee, Taek Joon; Kim, Dong Min; Kim, Jin Chul; Kim, Kyungtae; Kwon, Wonsang; Ko, Yong-Gi; Choi, Heungyeal; Chang, Taihyun; Ree, Moonhor

2010-08-19

Poly[bis(9H-carbazole-9-ethyl)dipropargylmalonate] (PCzDPM) is a novel pi-conjugated polymer bearing carbazole moieties that has been synthesized by polymerization of bis(9H-carbazole-9-ethyl)dipropargylmalonate with the aid of molybdenum chloride solution as the catalyst. This polymer is thermally stable up to 255 degrees C under a nitrogen atmosphere and 230 degrees C in air ambient; its glass-transition temperature is 147 or 128 degrees C, depending on the polymer chain conformation (helical or planar structure). The charge-transport characteristics of PCzDPM in nanometer-scaled thin films were studied as a function of temperature and film thickness. PCzDPM films with a thickness of 15-30 nm were found to exhibit very stable dynamic random access memory (DRAM) characteristics without polarity. Furthermore, the polymer films retain DRAM characteristics up to 180 degrees C. The ON-state current is dominated by Ohmic conduction, and the OFF-state current appears to undergo a transition from Ohmic to space-charge-limited conduction with a shallow-trap distribution. The ON/OFF switching of the devices is mainly governed by filament formation. The filament formation mechanism for the switching process is supported by the metallic properties of the PCzDPM film, which result in the temperature dependence of the ON-state current. In addition, the structure of this pi-conjugated polymer was found to vary with its thermal history; this change in structure can affect filament formation in the polymer film.

Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

DOE PAGES

Haye, R. J. La; Paz-Soldan, C.; Strait, E. J.

2015-01-23

DIII-D experiments show that fully penetrated resonant n=1 error field locked modes in Ohmic plasmas with safety factor q 95≳3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n=2/1) static error fields are shielded in Ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, Bhushan L.

1995-01-01

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

Deterministic quantum controlled-PHASE gates based on non-Markovian environments

NASA Astrophysics Data System (ADS)

Zhang, Rui; Chen, Tian; Wang, Xiang-Bin

2017-12-01

We study the realization of the quantum controlled-PHASE gate in an atom-cavity system beyond the Markovian approximation. The general description of the dynamics for the atom-cavity system without any approximation is presented. When the spectral density of the reservoir has the Lorentz form, by making use of the memory backflow from the reservoir, we can always construct the deterministic quantum controlled-PHASE gate between a photon and an atom, no matter the atom-cavity coupling strength is weak or strong. While, the phase shift in the output pulse hinders the implementation of quantum controlled-PHASE gates in the sub-Ohmic, Ohmic or super-Ohmic reservoirs.

Field-effect P-N junction

DOEpatents

Regan, William; Zettl, Alexander

2015-05-05

This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic contact, at least one rectifying contact disposed on the semiconductor layer, a gate including a layer disposed on the at least one rectifying contact and the semiconductor layer and a gate contact disposed on the layer. A lateral width of the rectifying contact is less than a semiconductor depletion width of the semiconductor layer. The gate contact is electrically connected to the ohmic contact to create a self-gating feedback loop that is configured to maintain a gate electric field of the gate.

Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

NASA Astrophysics Data System (ADS)

La Haye, R. J.; Paz-Soldan, C.; Strait, E. J.

2015-02-01

DIII-D experiments show that fully penetrated resonant n = 1 error field locked modes in ohmic plasmas with safety factor q95 ≳ 3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n = 2/1) static error fields are shielded in ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption. Error field correction (EFC) is performed on DIII-D (in ITER relevant shape and safety factor q95 ≳ 3) with either the n = 1 C-coil (no handedness) or the n = 1 I-coil (with ‘dominantly’ resonant field pitch). Despite EFC, which allows significantly lower plasma density (a ‘figure of merit’) before penetration occurs, the resulting saturated islands have similar large size; they differ only in the phase of the locked mode after typically being pulled (by up to 30° toroidally) in the electron diamagnetic drift direction as they grow to saturation. Island amplification and phase shift are explained by a second change-of-state in which the classical tearing index changes from stable to marginal by the presence of the island, which changes the current density profile. The eventual island size is thus governed by the inherent stability and saturation mechanism rather than the driving error field.

H-mode and Edge Physics on the Pegasus ST: Progress and Future Directions

NASA Astrophysics Data System (ADS)

Bongard, M. W.; Bodner, G. M.; Barr, J. L.; Burke, M. G.; Fonck, R. J.; Hinson, E. T.; Kriete, D. M.; Lewicki, B. T.; Perry, J. M.; Reusch, J. A.; Schlossberg, D. J.; Thome, K. E.; Winz, G. R.

2015-11-01

Ohmic H-modes are routinely attained on the Pegasus ST, in part due to the low L-H power threshold PLH arising from low-BT operation at A ~ 1 . Characteristics of H-mode include: improved τe, consistent with H98 ~ 1 edge current and pressure pedestal formation; and the occurrence of ELMs. Experiments in the past year have examined magnetic topology and density dependencies of PLH in detail. PLH exceeds ITER L-H scaling values by 10-20 ×, with PLH /PITPA 08 increasing sharply as A --> 1 . No PLH-minimizing density has been found. Unlike at high- A, PLH is insensitive to limited or diverted magnetic topologies to date. The low BT and modest pedestal values at A ~ 1 afford unique edge diagnostic accessibility to investigate ELMs and their nonlinear dynamics. Jedge (R , t) measured through a Type I ELM shows a complex pedestal collapse and filament ejection. These studies are being extended to higher Ip and longer pulse length with LHI startup to conserve Ohmic V-s and improve MHD stability. A modest-cost upgrade to the facility will enable detailed validation studies of nonlinear ELM dynamics and ELM control. This initiative will upgrade the centerstack, increasing BT by × 3 , Ohmic V-s by × 4 , and pulse lengths to 100 ms at A < 1 . 3 , as well as deploy a comprehensive 3D magnetic perturbation coil system with full poloidal coverage from frame coils and helical centerstack windings. Work supported by US DOE grant DE-FG02-96ER54375.

Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

PubMed

Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

2015-02-01

To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P < 0.01) at the same target temperature. It was concluded that the electrical field enhanced the urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

The role of titanium aluminide in n-gallium nitride ohmic contact technology

NASA Astrophysics Data System (ADS)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction mechanisms for the TiAl3-capped and the four-layer contact metallizations are suggested that account for both the morphology and the expected interfacial phases of each system.

Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

NASA Astrophysics Data System (ADS)

Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

2013-09-01

Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

Anodization of Copper in Chloride Media

DTIC Science & Technology

1994-01-31

ethylene glycol is often present. The results of their cyclic voltammetric experiments led them to the conclusion that the presence of ethylene glycol will...a microdisk, and that low ohmic drops are encountered even at high current densities. Wikiel, dos Santos and Osteryoung have used pulse voltammetry to...Cu+ is produced by the reproportionation reaction between Cu2 + in solution and Cuo on the disk: (13) Cu0 + Cu2 + = 2Cu+. The product Cu+ is detected

Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures

NASA Astrophysics Data System (ADS)

Nagaraju, G.; Ravindranatha Reddy, K.; Rajagopal Reddy, V.

2017-11-01

The electrical and current transport properties of rapidly annealed Dy/p-GaN SBD are probed by I-V and C-V techniques. The estimated barrier heights (BH) of as-deposited and 200 °C annealed SBDs are 0.80 eV ( I-V)/0.93 eV (C-V) and 0.87 eV (I-V)/1.03 eV (C-V). However, the BH rises to 0.99 eV (I-V)/　1.18 eV(C-V) and then slightly deceases to 0.92 eV (I-V)/1.03 eV (C-V) after annealing at 300 °C and 400 °C. The utmost BH is attained after annealing at 300 °C and thus the optimum annealing for SBD is 300 °C. By applying Cheung’s functions, the series resistance of the SBD is estimated. The BHs estimated by I-V, Cheung’s and Ψ S-V plot are closely matched; hence the techniques used here are consistency and validity. The interface state density of the as-deposited and annealed contacts are calculated and we found that the N SS decreases up to 300 °C annealing and then slightly increases after annealing at 400 °C. Analysis indicates that ohmic and space charge limited conduction mechanisms are found at low and higher voltages in forward-bias irrespective of annealing temperatures. Our experimental results demonstrate that the Poole-Frenkel emission is leading under the reverse bias of Dy/p-GaN SBD at all annealing temperatures.

A high density field reversed configuration (FRC) target for magnetized target fusion: First internal profile measurements of a high density FRC

NASA Astrophysics Data System (ADS)

Intrator, T.; Zhang, S. Y.; Degnan, J. H.; Furno, I.; Grabowski, C.; Hsu, S. C.; Ruden, E. L.; Sanchez, P. G.; Taccetti, J. M.; Tuszewski, M.; Waganaar, W. J.; Wurden, G. A.

2004-05-01

Magnetized target fusion (MTF) is a potentially low cost path to fusion, intermediate in plasma regime between magnetic and inertial fusion energy. It requires compression of a magnetized target plasma and consequent heating to fusion relevant conditions inside a converging flux conserver. To demonstrate the physics basis for MTF, a field reversed configuration (FRC) target plasma has been chosen that will ultimately be compressed within an imploding metal liner. The required FRC will need large density, and this regime is being explored by the FRX-L (FRC-Liner) experiment. All theta pinch formed FRCs have some shock heating during formation, but FRX-L depends further on large ohmic heating from magnetic flux annihilation to heat the high density (2-5×1022m-3), plasma to a temperature of Te+Ti≈500 eV. At the field null, anomalous resistivity is typically invoked to characterize the resistive like flux dissipation process. The first resistivity estimate for a high density collisional FRC is shown here. The flux dissipation process is both a key issue for MTF and an important underlying physics question.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsuo, Hiroki; Kitanaka, Yuuki; Inoue, Ryotaro

We investigate the mechanism of a switchable diode behavior observed in ferroelectric SrRuO{sub 3}/BiFeO{sub 3} (BFO)/SrRuO{sub 3} capacitors. We experimentally demonstrate that the switchable diode effect observed in the capacitors is induced by the polarization reversal in the BFO film. The conductivity in an Ohmic region in different oxidation states provides direct evidence that electron hole acts as the majority carrier, delivering p-type conduction. Density functional theory (DFT) calculations show that the p-type conduction arises from an unoccupied gap state of Fe{sup 4+} in an FeO{sub 5} pyramid which is derived from Bi vacancy. Our experimental and DFT study leadsmore » to the conclusion that the switchable diode effect originates from an asymmetric band bending in the top and bottom depletion layers modulated by ferroelectric polarization and oxygen vacancies.« less

Note: Development of a multichannel magnetic probe array for magnetohydrodynamic activity studies in Sino-United Spherical Tokamak

NASA Astrophysics Data System (ADS)

Zhong, H.; Tan, Y.; Gao, Z.

2018-02-01

A 30-channel movable magnetic probe radial array measuring the poloidal magnetic field's time derivative B˙ θ has been developed and installed on the Sino-United Spherical Tokamak to investigate the magnetohydrodynamic (MHD) activities in ohmic discharges. The probe array consists of thirty identical commercial chip inductors mounted on a slim printed circuit board and shielded by a customized quartz tube of 14 mm in outer diameter. With the application of instrumentation amplifiers, the system exhibits a good signal to noise ratio and the measured vertical field spatial distribution agrees well with the simulation result. The measured spatial and temporal distribution of B˙ θ during the MHD activities exhibits a clear phase reversal layer, which is a direct proof of tearing mode and provides a reliable indication of the magnetic island chain position.

Dissipation in the superconducting mixed state in the presence of a small oscillatory magnetic-field component

NASA Astrophysics Data System (ADS)

Risse, M. P.; Aikele, M. G.; Doettinger, S. G.; Huebener, R. P.; Tsuei, C. C.; Naito, M.

1997-06-01

We have studied the electric resistivity in superconducting amorphous Mo3Si films in a perpendicular magnetic field B0+B1 sin ωt with B1<0 we observed perfectly Ohmic behavior at currents I<

Formation of gallium vacancies and their effects on the nanostructure of Pd/Ir/Au ohmic contact to p-type GaN.

PubMed

Kim, Kyong Nam; Kim, Tae Hyung; Seo, Jin Seok; Kim, Ki Seok; Bae, Jeong Woon; Yeom, Geun Young

2013-12-01

The properties of Pd/Ir/Au ohmic metallization on p-type GaN have been investigated. Contacts annealed at 400 degrees C in O2 atmosphere demonstrated excellent ohmic characteristics with a specific contact resistivity of 1.5 x 10(-5) Omega-cm2. This is attributed to the formation of Ga vacancies at the contact metal-semiconductor interfacial region due to the out-diffusion of Ga atoms. The out-diffusion of Ga atoms was confirmed by X-ray photoelectron spectroscopy depth profiles, high-resolution transmission electron microscopy, and electron energy loss spectroscopy using a scanning transmission electron microscope.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts.

PubMed

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-12-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10 -2 Ω·cm 2 . Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Skyrmions Driven by Intrinsic Magnons

NASA Astrophysics Data System (ADS)

Psaroudaki, Christina; Loss, Daniel

2018-06-01

We study the dynamics of a Skyrmion in a magnetic insulating nanowire in the presence of time-dependent oscillating magnetic field gradients. These ac fields act as a net driving force on the Skyrmion via its own intrinsic magnetic excitations. In a microscopic quantum field theory approach, we include the unavoidable coupling of the external field to the magnons, which gives rise to time-dependent dissipation for the Skyrmion. We demonstrate that the magnetic ac field induces a super-Ohmic to Ohmic crossover behavior for the Skyrmion dissipation kernels with time-dependent Ohmic terms. The ac driving of the magnon bath at resonance results in a unidirectional helical propagation of the Skyrmion in addition to the otherwise periodic bounded motion.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

NASA Astrophysics Data System (ADS)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Fabrication of optically reflecting ohmic contacts for semiconductor devices

DOEpatents

Sopori, B.L.

1995-07-04

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

Ohmic contacts for laser diodes

NASA Technical Reports Server (NTRS)

Ladany, I.; Marinelli, D. P.

1983-01-01

Requirements for ohmic contacts to laser diodes are discussed, and properties of Schottky barrier tunneling contacts are reviewed. A procedure is described for measuring contact resistance on fabricated laser material without the need for specially constructed samples and contact configurations. Measurements of contact resistance and estimates of specific contact resistance are given for Ti/Pt/Au contacts to surfaces with three different doping levels. It was found that below a p-type carrier concentration of 1 x 10 to the 19th per cu cm the contact resistance is likely to be too high for good device performance. At higher doping levels, a specific contact resistance as low as 2 x 10 to the -6th ohm sq cm was obtained. Oxide stripe lasers provided with the type of contact discussed in this paper have been operated without failures for periods up to 7 years at a current density at the contact of 6-8 kA/sq cm. It appears therefore that these contacts satisfy the need for low resistance and durability and that, at the same time, they do not cause any obvious material degradation.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors.

PubMed

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-21

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Effects of Ohmic Resistance on Dynamic Characteristics and Impedance of Micro/Nano Cantilever Beam resonators

NASA Astrophysics Data System (ADS)

Rezazadeh, Ghader; Keyvani, Aliasghar; Sadeghi, Morteza H.; Bahrami, Manouchehr

2013-06-01

Effects of Ohmic resistance on MEMS/NEMS vibrating structures that have always been dismissed in some situations may cause important changes in resonance properties and impedance parameters of the MEMS/NEMS based circuits. In this paper it is aimed to present a theoretical model to precisely investigate the problem on a simple cantilever-substrate resonator. In this favor the Ohm's current law and charge conservation law have been merged to find a differential Equation for voltage propagation on the beam and because mostly nano structures are expected as the scope of the problem, modified couple stress theory is used to formulate the dynamic motion of the beam. The two governing equations were coupled and both nonlinear that have been solved simultaneously using a Galerkin based state space formulation. The obtained results that are in exact agreement with previous works show that dynamic pull-in voltage, switching time, and impedance of structure as a MEMS capacitor especially in frequencies higher than natural resonance frequency strongly relay on electrical resistance of the beam and substrate material.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

PubMed Central

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Flexible, Carbon-Based Ohmic Contacts for Organic Transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik

2005-01-01

A low-temperature process for fabricating flexible, ohmic contacts for use in organic thin-film transistors (OTFTs) has been developed. Typical drainsource contact materials used previously for OTFTs include (1) vacuum-deposited noble-metal contacts and (2) solution-deposited intrinsically conducting molecular or polymeric contacts. Both of these approaches, however, have serious drawbacks.

Control quantum evolution speed of a single dephasing qubit for arbitrary initial states via periodic dynamical decoupling pulses.

PubMed

Song, Ya-Ju; Tan, Qing-Shou; Kuang, Le-Man

2017-03-08

We investigate the possibility to control quantum evolution speed of a single dephasing qubit for arbitrary initial states by the use of periodic dynamical decoupling (PDD) pulses. It is indicated that the quantum speed limit time (QSLT) is determined by initial and final quantum coherence of the qubit, as well as the non-Markovianity of the system under consideration during the evolution when the qubit is subjected to a zero-temperature Ohmic-like dephasing reservoir. It is shown that final quantum coherence of the qubit and the non-Markovianity of the system can be modulated by PDD pulses. Our results show that for arbitrary initial states of the dephasing qubit with non-vanishing quantum coherence, PDD pulses can be used to induce potential acceleration of the quantum evolution in the short-time regime, while PDD pulses can lead to potential speedup and slow down in the long-time regime. We demonstrate that the effect of PDD on the QSLT for the Ohmic or sub-Ohmic spectrum (Markovian reservoir) is much different from that for the super-Ohmic spectrum (non-Markovian reservoir).

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

NASA Astrophysics Data System (ADS)

Fujishima, Tatsuya; Joglekar, Sameer; Piedra, Daniel; Lee, Hyung-Seok; Zhang, Yuhao; Uedono, Akira; Palacios, Tomás

2013-08-01

A BCl3 surface plasma treatment technique to reduce the resistance and to increase the uniformity of ohmic contacts in AlGaN/GaN high electron mobility transistors with a GaN cap layer has been established. This BCl3 plasma treatment was performed by an inductively coupled plasma reactive ion etching system under conditions that prevented any recess etching. The average contact resistances without plasma treatment, with SiCl4, and with BCl3 plasma treatment were 0.34, 0.41, and 0.17 Ω mm, respectively. Also, the standard deviation of the ohmic contact resistance with BCl3 plasma treatment was decreased. This decrease in the standard deviation of contact resistance can be explained by analyzing the surface condition of GaN with x-ray photoelectron spectroscopy and positron annihilation spectroscopy. We found that the proposed BCl3 plasma treatment technique can not only remove surface oxide but also introduce surface donor states that contribute to lower the ohmic contact resistance.

Investigation of impurity transport using laser blow-off technique in the HL-2A Ohmic and ECRH plasmas

NASA Astrophysics Data System (ADS)

Kai, Zhang; Zheng-Ying, Cui; Ping, Sun; Chun-Feng, Dong; Wei, Deng; Yun-Bo, Dong; Shao-Dong, Song; Min, Jiang; Yong-Gao, Li; Ping, Lu; Qing-Wei, Yang

2016-06-01

Impurity transports in two neighboring discharges with and without electron cyclotron resonance heating (ECRH) are studied in the HL-2A tokamak by laser blow-off (LBO) technique. The progression of aluminium ions as the trace impurity is monitored by soft x-ray (SXR) and bolometer detector arrays with good temporal and spatial resolutions. Obvious difference in the time trace of the signal between the Ohmic and ECRH L-mode discharges is observed. Based on the numerical simulation with one-dimensional (1D) impurity transport code STRAHL, the radial profiles of impurity diffusion coefficient D and convective velocity V are obtained for each shot. The result shows that the diffusion coefficient D significantly increases throughout the plasma minor radius for the ECRH case with respect to the Ohmic case, and that the convection velocity V changes from negative (inward) for the Ohmic case to partially positive (outward) for the ECRH case. The result on HL-2A confirms the pump out effect of ECRH on impurity profile as reported on various other devices.

Ohmic ITBs in Alcator C-Mod

NASA Astrophysics Data System (ADS)

Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

A High Isolation Series-Shunt RF MEMS Switch

PubMed Central

Yu, Yuan-Wei; Zhu, Jian; Jia, Shi-Xing; Shi, Yi

2009-01-01

This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. PMID:22408535

Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, S.W.; Yoon, S.K.; Kwak, J.S.

2006-05-15

We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi(10 nm)/Au(10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99x10{sup -4} to 2.54x10{sup -4} {omega} cm{sup 2}, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaN/GaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance ofmore » the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p-Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.« less

Sintered Cr/Pt and Ni/Au ohmic contacts to B 12P 2

DOE PAGES

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; ...

2015-04-09

With this study, icosahedral boron phosphide (B 12P 2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10 –4 Ω cm 2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contactmore » resistance was ~l–4 × 10 –4 Ω cm 2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12P 2 at 700 °C and a reaction layer between Ni and B 12P 2 thinner than ~25 nm at 500 °C.« less

Effects of alloying and local order in AuNi contacts for Ohmic radio frequency micro electro mechanical systems switches via multi-scale simulation

NASA Astrophysics Data System (ADS)

Gaddy, Benjamin E.; Kingon, Angus I.; Irving, Douglas L.

2013-05-01

Ohmic RF-MEMS switches hold much promise for low power wireless communication, but long-term degradation currently plagues their reliable use. Failure in these devices occurs at the contact and is complicated by the fact that the same asperities that bear the mechanical load are also important to the flow of electrical current needed for signal processing. Materials selection holds the key to overcoming the barriers that prevent widespread use. Current efforts in materials selection have been based on the material's (or alloy's) ability to resist oxidation as well as its room-temperature properties, such as hardness and electrical conductivity. No ideal solution has yet been found via this route. This may be due, in part, to the fact that the in-use changes to the local environment of the asperity are not included in the selection criteria. For example, Joule heating would be expected to raise the local temperature of the asperity and impose a non-equilibrium thermal gradient in the same region expected to respond to mechanical actuation. We propose that these conditions should be considered in the selection process, as they would be expected to alter mechanical, electrical, and chemical mechanisms in the vicinity of the surface. To this end, we simulate the actuation of an Ohmic radio frequency micro electro mechanical systems switch by using a multi-scale method to model a current-carrying asperity in contact with a polycrystalline substrate. Our method couples continuum solutions of electrical and thermal transport equations to an underlying molecular dynamics simulation. We present simulations of gold-nickel asperities and substrates in order to evaluate the influence of alloying and local order on the early stages of contact actuation. The room temperature response of these materials is compared to the response of the material when a voltage is applied. Au-Ni interactions are accounted for through modification of the existing Zhou embedded atom method potential. The modified potential more accurately captures trends in high-temperature properties, including the enthalpy of mixing and melting temperatures. We simulate the loading of a contacting asperity to several substrates with varying Ni alloying concentrations and compare solid solution strengthening to a phase-separated system. Our simulations show that Ni concentration and configuration have an important effect on contact area, constriction resistance, thermal profiles, and material transfer. These differences suggest that a substrate with 15 at. % Ni featuring phase segregation has fewer early markers that experimentally have indicated long-term failure.

Energy balance in TM-1-MH Tokamak (ohmical heating)

NASA Astrophysics Data System (ADS)

Stoeckel, J.; Koerbel, S.; Kryska, L.; Kopecky, V.; Dadalec, V.; Datlov, J.; Jakubka, K.; Magula, P.; Zacek, F.; Pereverzev, G. V.

1981-10-01

Plasma in the TM-1-MH Tokamak was experimentally studied in the parameter range: tor. mg. field B = 1,3 T, plasma current I sub p = 14 kA, electron density N sub E 3.10 to the 19th power cubic meters. The two numerical codes are available for the comparison with experimental data. TOKATA-code solves simplified energy balance equations for electron and ion components. TOKSAS-code solves the detailed energy balance of the ion component.

High Speed FETs Fabricated in GaAs/AlGaAs Layered Structures Prepared by Molecular Beam Epitaxy.

DTIC Science & Technology

1984-01-01

but proper measures, such as improved ohmic con - tacts, metal conductors and small geometrics are useful. In digital circuit applications in addition to...heterointerface encounter reduced scattering by ionized donors located in AlGaAs layer, the current con - ducting channel must be parallel to the...ments apply to the velocity saturated MOSFET as well. For the MESFET, in con - trast, the transconductance increases with increasing gate biases, since

Dye-sensitized solar cells

DOEpatents

Skotheim, T.A.

1980-03-04

A low-cost dye-sensitized Schottky barrier solar cell is comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent. 3 figs.

Dye-sensitized solar cells

DOEpatents

Skotheim, Terje A. [Berkeley, CA

1980-03-04

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

PubMed

Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

2010-12-28

Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

Spherical tokamaks with plasma centre-post

NASA Astrophysics Data System (ADS)

Ribeiro, Celso

2013-10-01

The metal centre-post (MCP) in tokamaks is a structure which carries the total toroidal field current and also houses the Ohmic heating solenoid in conventional or low aspect ratio (Spherical)(ST) tokamaks. The MCP and solenoid are critical components for producing the toroidal field and for the limited Ohmic flux in STs. Constraints for a ST reactor related to these limitations lead to a minimum plasma aspect ratio of 1.4 which reduces the benefit of operation at higher betas in a more compact ST reactor. Replacing the MCP is of great interest for reactor-based ST studies since the device is simplified, compactness increased, and maintenance reduced. An experiment to show the feasibility of using a plasma centre-post (PCP) is being currently under construction and involves a high level of complexity. A preliminary study of a very simple PCP, which is ECR(Electron Cyclotron Resonance)-assisted and which includes an innovative fuelling system based on pellet injection, has recently been reported. This is highly suitable for an ultra-low aspect ratio tokamak (ULART) device. Advances on this PCP ECR-assisted concept within a ULART and the associated fuelling system are presented here, and will include the field topology for the PCP ECR-assisted scheme, pellet ablation modeling, and a possible global equilibrium simulation. VIE-ITCR, IAEA-CRP contr.17592, National Instruments-Costa Rica.

Dye-sensitized Schottky barrier solar cells

DOEpatents

Skotheim, Terje A.

1978-01-01

A low-cost dye-sensitized Schottky barrier solar cell comprised of a substrate of semiconductor with an ohmic contact on one face, a sensitizing dye adsorbed onto the opposite face of the semiconductor, a transparent thin-film layer of a reducing agent over the dye, and a thin-film layer of metal over the reducing agent. The ohmic contact and metal layer constitute electrodes for connection to an external circuit and one or the other or both are made transparent to permit light to penetrate to the dye and be absorbed therein for generating electric current. The semiconductor material chosen to be the substrate is one having a wide bandgap and which therefore is transparent; the dye selected is one having a ground state within the bandgap of the semiconductor to generate carriers in the semiconductor, and a first excited state above the conduction band edge of the semiconductor to readily conduct electrons from the dye to the semiconductor; the reducing agent selected is one having a ground state above the ground state of the sensitizer to provide a plentiful source of electrons to the dye during current generation and thereby enhance the generation; and the metal for the thin-film layer of metal is selected to have a Fermi level in the vicinity of or above the ground state of the reducing agent to thereby amply supply electrons to the reducing agent.

Anomalous current diffusion and improved confinement in the HT-6M tohamak

NASA Astrophysics Data System (ADS)

Gao, X.; Li, J. G.; Wan, Y. X.; Huo, Y. P.; Guo, W. K.; Fan, S. P.; Yu, C. X.; Luo, J. R.; Yin, F. X.; Meng, Y. D.; Zheng, L.; Yin, F.; Lin, B. L.; Zhang, S. Y.; Wang, S. Y.; Lu, H. J.; Liu, S. X.; Tong, X. D.; Ding, L. C.; Wu, Z. Y.; Yin, X. J.; Guo, Q. L.; Gong, X. Z.; Wu, X. C.; Zhao, J. Y.; Xi, J. S.

1994-10-01

Current diffusion was studied during edge ohmic heating (EOH) experiments in the HT-6M tokamak. The EOH power system makes the plasma current linearly ramp up from an initial steady state ( Ip=55kA) to a second steady state ( Ip=60kA) at a fast ramp rate of 12 MA/s. A stable discharge of an improved confinement was observed experimentally in the HT-6M tokamak after the plasma current was ramped to rise rapidly to a second steady state. The plasma current is ramped up much faster than both the classical skin time and neoclassical skin time. Fast current ramp up increases the anomalous current diffusion. The measured values of {β P+l i}/{2} and the soft X-ray sawtooth inversion radius imply the anomalous current penetration. The mechanism of anomalous penetration and improved confinement is discussed.

Preliminary measurements of neutrons from the D-D reaction in the COMPASS tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dankowski, J., E-mail: jan.dankowski@ifj.edu.pl; Kurowski, A.; Twarog, D.

Recent results of measured fast neutrons created in the D-D reaction on the COMPASS tokamak during ohmic discharges are presented in this paper. Two different type detectors were used during experiment. He-3 detectors and bubble detectors as a support. The measurements are an introduction for neutron diagnostic on tokamak COMPASS and monitoring neutrons during discharges with Neutral Beam Injection (NBI). The He-3 counters and bubble detectors were located in two positions near tokamak vacuum chamber at a distance less than 40 cm to the centre of plasma. The neutrons flux was observed in ohmic discharges. However, analysis of our resultsmore » does not indicate any clear source of neutrons production during ohmic discharges.« less

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

NASA Technical Reports Server (NTRS)

Jung, Tae-Won; Lindholm, Fredrik A.; Neugroschel, Arnost

1987-01-01

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field.

PubMed

Laitinen, Antti; Kumar, Manohar; Hakonen, Pertti; Sonin, Edouard

2018-01-12

We have investigated tunneling current through a suspended graphene Corbino disk in high magnetic fields at the Dirac point, i.e. at filling factor ν = 0. At the onset of the dielectric breakdown the current through the disk grows exponentially before ohmic behaviour, but in a manner distinct from thermal activation. We find that Zener tunneling between Landau sublevels dominates, facilitated by tilting of the source-drain bias potential. According to our analytic modelling, the Zener tunneling is strongly affected by the gyrotropic force (Lorentz force) due to the high magnetic field.

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

NASA Astrophysics Data System (ADS)

Grodzicki, Miłosz; Smolarek, Szymon; Mazur, Piotr; Zuber, Stefan; Ciszewski, Antoni

2009-11-01

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H 2 and in situ Ar + ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I- V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar + bombardment. Formation of ohmic nano-contacts on Ar +-bombarded surfaces was observed.

Device and Container for Reheating and Sterilization

NASA Technical Reports Server (NTRS)

Sastry, Sudhir K.; Heskitt, Brian F.; Jun, Soojin; Marcy, Joseph E.; Mahna, Ritesh

2012-01-01

Long-duration space missions require the development of improved foods and novel packages that do not represent a significant disposal issue. In addition, it would also be desirable if rapid heating technologies could be used on Earth as well, to improve food quality during a sterilization process. For this purpose, a package equipped with electrodes was developed that will enable rapid reheating of contents via ohmic heating to serving temperature during space vehicle transit. Further, the package is designed with a resealing feature, which enables the package, once used, to contain and sterilize waste, including human waste for storage prior to jettison during a long-duration mission. Ohmic heating is a technology that has been investigated on and off for over a century. Literature indicates that foods processed by ohmic heating are of superior quality to their conventionally processed counterparts. This is due to the speed and uniformity of ohmic heating, which minimizes exposure of sensitive materials to high temperatures. In principle, the material may be heated rapidly to sterilization conditions, cooled rapidly, and stored. The ohmic heating device herein is incorporated within a package. While this by itself is not novel, a reusable feature also was developed with the intent that waste may be stored and re-sterilized within the packages. These would then serve a useful function after their use in food processing and storage. The enclosure should be designed to minimize mass (and for NASA's purposes, Equivalent System Mass, or ESM), while enabling the sterilization function. It should also be electrically insulating. For this reason, Ultem high-strength, machinable electrical insulator was used.

Soldering to a single atomic layer

NASA Astrophysics Data System (ADS)

Girit, ćaǧlar Ö.; Zettl, A.

2007-11-01

The standard technique to make electrical contact to nanostructures is electron beam lithography. This method has several drawbacks including complexity, cost, and sample contamination. We present a simple technique to cleanly solder submicron sized, Ohmic contacts to nanostructures. To demonstrate, we contact graphene, a single atomic layer of carbon, and investigate low- and high-bias electronic transport. We set lower bounds on the current carrying capacity of graphene. A simple model allows us to obtain device characteristics such as mobility, minimum conductance, and contact resistance.

Soldering to a single atomic layer

NASA Astrophysics Data System (ADS)

Girit, Caglar; Zettl, Alex

2008-03-01

The standard technique to make electrical contact to nanostructures is electron beam lithography. This method has several drawbacks including complexity, cost, and sample contamination. We present a simple technique to cleanly solder submicron sized, Ohmic contacts to nanostructures. To demonstrate, we contact graphene, a single atomic layer of carbon, and investigate low- and high-bias electronic transport. We set lower bounds on the current carrying capacity of graphene. A simple model allows us to obtain device characteristics such as mobility, minimum conductance, and contact resistance.

Multi-step resistive switching behavior of Li-doped ZnO resistance random access memory device controlled by compliance current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chun-Cheng; Department of Mathematic and Physical Sciences, R.O.C. Air Force Academy, Kaohsiung 820, Taiwan; Tang, Jian-Fu

2016-06-28

The multi-step resistive switching (RS) behavior of a unipolar Pt/Li{sub 0.06}Zn{sub 0.94}O/Pt resistive random access memory (RRAM) device is investigated. It is found that the RRAM device exhibits normal, 2-, 3-, and 4-step RESET behaviors under different compliance currents. The transport mechanism within the device is investigated by means of current-voltage curves, in-situ transmission electron microscopy, and electrochemical impedance spectroscopy. It is shown that the ion transport mechanism is dominated by Ohmic behavior under low electric fields and the Poole-Frenkel emission effect (normal RS behavior) or Li{sup +} ion diffusion (2-, 3-, and 4-step RESET behaviors) under high electric fields.

Transport properties of triarylamine based dendrimers studied by space charge limited current transients

NASA Astrophysics Data System (ADS)

Szymanski, Marek Z.; Kulszewicz-Bajer, Irena; Faure-Vincent, Jérôme; Djurado, David

2012-08-01

We have studied hole transport in triarylamine based dendrimer using space-charge-limited current transient technique. A mobility of 8 × 10-6 cm2/(V s) and a characteristic detrapping time of about 100 ms have been obtained. We found that quasi-ohmic contact is formed with gold. The obtained mobility differs from the apparent one given by the analysis of stationary current-voltage characteristics because of a limited contact efficiency. The comparison between transients obtained from fresh and aged samples reveals no change in mobility with aging. The deterioration of electrical properties is exclusively caused by trap formation and accumulation of ionic conducting impurities. Finally, repeated transient measurements have been applied to analyze the dynamics of charge trapping process.

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation.

PubMed

Liu, Shu-Yen; Sheu, J K; Lee, M L; Lin, Yu-Chuan; Tu, S J; Huang, F W; Lai, W C

2012-03-12

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.

Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

PubMed

Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

2014-06-01

Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

PubMed

Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

2017-05-01

The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p < 0.05) larger at 0.06-0.5 kHz than at 1 kHz, and sub-lethal injury of pathogenic bacteria was reduced by decreasing frequency. MS-2 phage was inactivated more effectively at low frequency, and was more sensitive to acidic conditions than pathogenic bacteria. Electrode corrosion and quality degradation of tomato juice were not observed regardless of frequency. This study suggests that low frequency pulsed ohmic heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

State transition of a non-Ohmic damping system in a corrugated plane.

PubMed

Lü, Kun; Bao, Jing-Dong

2007-12-01

Anomalous transport of a particle subjected to non-Ohmic damping of the power delta in a tilted periodic potential is investigated via Monte Carlo simulation of the generalized Langevin equation. It is found that the system exhibits two relative motion modes: the locked state and the running state. In an environment of sub-Ohmic damping (0=2D_(eff)(delta){t(delta_eff} . Our result shows that the effective power index delta_(eff) can be enhanced and is a nonmonotonic function of the temperature and the driving force. The mixture of the two motion modes also leads to a breakdown of the hysteresis loop of the mobility.

Junction-side illuminated silicon detector arrays

DOEpatents

Iwanczyk, Jan S.; Patt, Bradley E.; Tull, Carolyn

2004-03-30

A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

PubMed

Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

2008-08-22

In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tang, Zhoufei; Ouyang, Xiaolong; Gong, Zhihao

An extended hierarchy equation of motion (HEOM) is proposed and applied to study the dynamics of the spin-boson model. In this approach, a complete set of orthonormal functions are used to expand an arbitrary bath correlation function. As a result, a complete dynamic basis set is constructed by including the system reduced density matrix and auxiliary fields composed of these expansion functions, where the extended HEOM is derived for the time derivative of each element. The reliability of the extended HEOM is demonstrated by comparison with the stochastic Hamiltonian approach under room-temperature classical ohmic and sub-ohmic noises and the multilayermore » multiconfiguration time-dependent Hartree theory under zero-temperature quantum ohmic noise. Upon increasing the order in the hierarchical expansion, the result obtained from the extended HOEM systematically converges to the numerically exact answer.« less

A first theoretical realization of honeycomb topological magnon insulator.

PubMed

Owerre, S A

2016-09-28

It has been recently shown that in the Heisenberg (anti)ferromagnet on the honeycomb lattice, the magnons (spin wave quasipacticles) realize a massless two-dimensional (2D) Dirac-like Hamiltonian. It was shown that the Dirac magnon Hamiltonian preserves time-reversal symmetry defined with the sublattice pseudo spins and the Dirac points are robust against magnon-magnon interactions. The Dirac points also occur at nonzero energy. In this paper, we propose a simple realization of nontrivial topology (magnon edge states) in this system. We show that the Dirac points are gapped when the inversion symmetry of the lattice is broken by introducing a next-nearest neighbour Dzyaloshinskii-Moriya (DM) interaction. Thus, the system realizes magnon edge states similar to the Haldane model for quantum anomalous Hall effect in electronic systems. However, in contrast to electronic spin current where dissipation can be very large due to Ohmic heating, noninteracting topological magnons can propagate for a long time without dissipation as magnons are uncharged particles. We observe the same magnon edge states for the XY model on the honeycomb lattice. Remarkably, in this case the model maps to interacting hardcore bosons on the honeycomb lattice. Quantum magnetic systems with nontrivial magnon edge states are called topological magnon insulators. They have been studied theoretically on the kagome lattice and recently observed experimentally on the kagome magnet Cu(1-3, bdc) with three magnon bulk bands. Our results for the honeycomb lattice suggests an experimental procedure to search for honeycomb topological magnon insulators within a class of 2D quantum magnets and ultracold atoms trapped in honeycomb optical lattices. In 3D lattices, Dirac and Weyl points were recently studied theoretically, however, the criteria that give rise to them were not well-understood. We argue that the low-energy Hamiltonian near the Weyl points should break time-reversal symmetry of the pseudo spins. Thus, recovering the same criteria in electronic systems.

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng, E-mail: wcke@saturn.yzu.edu.tw

2014-03-21

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highlymore » nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.« less

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Liao, Chung-Chi; Ke, Wen-Cheng; Chang, Yuan-Ching; Huang, Hao-Ping; Chen, Nai-Chuan

2014-03-01

This paper presents the electrical properties of Al-doped ZnO (AZO) films directly grown on two types of p-type GaN thin films. The low-pressure p-GaN thin films (LP-p-GaN) exhibited structural properties of high-density edge-type threading dislocations (TDs) and compensated defects (i.e., nitrogen vacancy). Compared with high-pressure p-GaN thin films (HP-p-GaN), X-ray photoemission spectroscopy of Ga 3d core levels indicated that the surface Fermi-level shifted toward the higher binding-energy side by approximately 0.7 eV. The high-density edge-type TDs and compensated defects enabled surface Fermi-level shifting above the intrinsic Fermi-level, causing the surface of LP-p-GaN thin films to invert to n-type semiconductor. A highly nonlinear increase in leakage current regarding reverse-bias voltage was observed for AZO/LP-p-GaN. The theoretical fits for the reverse-bias voltage region indicated that the field-assisted thermal ionization of carriers from defect associated traps, which is known as the Poole-Frenkel effect, dominated the I-V behavior of AZO/LP-p-GaN. The fitting result estimated the trap energy level at 0.62 eV below the conduction band edge. In addition, the optical band gap increased from 3.50 eV for as-deposited AZO films to 3.62 eV for 300 °C annealed AZO films because of the increased carrier concentration. The increasing Fermi-level of the 300 °C annealed AZO films enabled the carrier transport to move across the interface into the LP-p-GaN thin films without any thermal activated energy. Thus, the Ohmic behavior of AZO contact can be achieved directly on the low-pressure p-GaN films at room temperature.

Measurement of the complete core plasma flow across the LOC-SOC transition at ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Lebschy, A.; McDermott, R. M.; Angioni, C.; Geiger, B.; Prisiazhniuk, D.; Cavedon, M.; Conway, G. D.; Dux, R.; Dunne, M. G.; Kappatou, A.; Pütterich, T.; Stroth, U.; Viezzer, E.; the ASDEX Upgrade Team

2018-02-01

A newly installed core charge exchange recombination spectroscopy (CXRS) diagnostic at ASDEX Upgrade (AUG) enables the evaluation of the core poloidal rotation (upol ) through the inboard-outboard asymmetry of the toroidal rotation with an accuracy of 0.5 to 1 km s-1 . Using this technique, the total plasma flow has been measured in Ohmic L-mode plasmas across the transition from the linear to saturated ohmic confinement (LOC-SOC) regimes. The core poloidal rotation of the plasma around mid-radius is found to be always in the ion diamagnetic direction, in disagreement with neoclassical (NC) predictions. The edge rotation is found to be electron-directed and consistent with NC codes. This measurement provides as well the missing ingredient to evaluate the core E×B velocity (uE×B ) from data only, which can then be compared to measurements of the perpendicular velocity of the turbulent fluctuations (u\\perp ) to gain information on the turbulent phase velocity (vph ). The non neoclassical upol from CXRS leads to good agreement between uE×B and u\\perp indicating that vph is small and at similar values as found with gyrokinetic simulations. Moreover, the data shows a shift of vph in the ion-diamagnetic direction at the edge after the transition from LOC to SOC consistent with a change in the dominant turbulence regime. The upgrade of the core CXRS system provides as well a deeper insight into the intrinsic rotation. This paper shows that the reversal of the core toroidal rotation occurs clearly after the LOC-SOC transition and concomitant with the peaking of the electron density.

Pure silver ohmic contacts to N- and P- type gallium arsenide materials

DOEpatents

Hogan, Stephen J.

1986-01-01

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Plasma parameters of the cathode spot explosive electron emission cell obtained from the model of liquid-metal jet tearing and electrical explosion

NASA Astrophysics Data System (ADS)

Tsventoukh, M. M.

2018-05-01

A model has been developed for the explosive electron emission cell pulse of a vacuum discharge cathode spot that describes the ignition and extinction of the explosive pulse. The pulse is initiated due to hydrodynamic tearing of a liquid-metal jet which propagates from the preceding cell crater boundary and draws the ion current from the plasma produced by the preceding explosion. Once the jet neck has been resistively heated to a critical temperature (˜1 eV), the plasma starts expanding and decreasing in density, which corresponds to the extinction phase. Numerical and analytical solutions have been obtained that describe both the time behavior of the pulse plasma parameters and their average values. For the cell plasma, the momentum per transferred charge has been estimated to be some tens of g cm/(s C), which is consistent with the known measurements of ion velocity, ion erosion rate, and specific recoil force. This supports the model of the pressure-gradient-driven plasma acceleration mechanism for the explosive cathode spot cells. The ohmic electric field within the explosive current-carrying plasma has been estimated to be some tens of kV/cm, which is consistent with the known experimental data on cathode potential fall and explosive cell plasma size. This supports the model that assumes the ohmic nature of the cathode potential fall in a vacuum discharge.

Impact of helical boundary conditions in MHD modeling of RFP and tokamak plasmas

NASA Astrophysics Data System (ADS)

Bonfiglio, D.; Cappello, S.; Escande, D. F.; Piovesan, P.; Veranda, M.; Chacón, L.

2012-10-01

Helical boundary conditions imposed by the active control system of the RFX-mod device provide a handle to govern the plasma dynamics in both RFP and Ohmic tokamak discharges [1]. By applying an edge radial magnetic field with proper helicity, it is possible to increase the persistence of the spontaneous helical RFP states at high current,and to stimulate them also at low current or high density. Helical BCs even allow to access helical states with different helicity than the spontaneous one [2]. In Ohmic tokamak operation at q(a)<2, the presence of the 2/1 RWM reduces the sawtoothing activity of the 1/1 internal kink, which takes a stationary snake-like character instead. Many of these features are qualitatively reproduced in 3D nonlinear MHD modeling. We study the impact of helical BCs on the MHD dynamics in both RFP and tokamak with two successfully benchmarked numerical tools, SpeCyl and PIXIE3D [3]. We recover the bifurcation from a sawtooth to a snake solution when imposing a 2/1 BC in the tokamak case and we interpret this as a toroidal/nonlinear coupling effect. We show that the bifurcation is more easily stimulated with a 1/1 BC.[4pt] [1] P. Piovesan, invited talk this meeting[0pt] [2] M. Veranda et al EPS-ICPP Conference (2012) P4.004[0pt] [3] D. Bonfiglio et al Phys. Plasmas (2010)

Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

PubMed

Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

2017-05-19

Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

Effect of continuous ohmic heating to inactivate Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice.

PubMed

Lee, S-Y; Sagong, H-G; Ryu, S; Kang, D-H

2012-04-01

The purpose of this study was to investigate the efficacy of continuous ohmic heating for reducing Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice. Orange juice and tomato juice were treated with electric field strengths in the range of 25-40 V cm(-1) for different treatment times. The temperature of the samples increased with increasing treatment time and electric field strength. The rate of temperature change for tomato juice was higher than for orange juice at all voltage gradients applied. Higher electric field strength or longer treatment time resulted in a greater reduction of pathogens. Escherichia coli O157:H7 was reduced by more than 5 log after 60-, 90- and 180-s treatments in orange juice with 40, 35 and 30 V cm(-1) electric field strength, respectively. In tomato juice, treatment with 25 V cm(-1) for 30 s was sufficient to achieve a 5-log reduction in E. coli O157:H7. Similar results were observed in Salm. Typhimurium and L. monocytogenes. The concentration of vitamin C in continuous ohmic heated juice was significantly higher than in conventionally heated juice (P < 0·05). Continuous ohmic heating can be effective in killing foodborne pathogens on orange juice and tomato juice with lower degradation of quality than conventional heating. These results suggest that continuous ohmic heating might be effectively used to pasteurize fruit and vegetable juices in a short operating time and that the effect of inactivation depends on applied electric field strengths, treatment time and electric conductivity. © 2012 The Authors. Journal of Applied Microbiology © 2012 The Society for Applied Microbiology.

Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dan; Department of Physics and Institute of Solid-state electronics physical, Ningbo University, Ningbo 315211; Sheng, Jiang, E-mail: shengjiang@nimte.ac.cn

2016-07-25

Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (J{sub sc}). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electricmore » field of the solar cell, enhancing the open circuit voltage (V{sub oc}). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.« less

Whiskerless Schottky diode

NASA Technical Reports Server (NTRS)

Bishop, William L. (Inventor); Mcleod, Kathleen A. (Inventor); Mattauch, Robert J. (Inventor)

1991-01-01

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Pulsating flow and boundary layers in viscous electronic hydrodynamics

NASA Astrophysics Data System (ADS)

Moessner, Roderich; Surówka, Piotr; Witkowski, Piotr

2018-04-01

Motivated by experiments on a hydrodynamic regime in electron transport, we study the effect of an oscillating electric field in such a setting. We consider a long two-dimensional channel of width L , whose geometrical simplicity allows an analytical study as well as hopefully permitting an experimental realization. The response depends on viscosity ν , driving frequency ω , and ohmic heating coefficient γ via the dimensionless complex variable L/2ν (i ω +γ ) =i Ω +Σ . While at small Ω , we recover the static solution, a different regime appears at large Ω with the emergence of a boundary layer. This includes a splitting of the location of maximal flow velocity from the center towards the edges of the boundary layer, an increasingly reactive nature of the response, with the phase shift of the response varying across the channel. The scaling of the total optical conductance with L differs between the two regimes, while its frequency dependence resembles a Drude form throughout, even in the complete absence of ohmic heating, against which, at the same time, our results are stable. Current estimates for transport coefficients in graphene and delafossites suggest that the boundary-layer regime should be experimentally accessible.

Non-axisymmetric equilibrium reconstruction of a current-carrying stellarator using external magnetic and soft x-ray inversion radius measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, X., E-mail: xzm0005@auburn.edu; Maurer, D. A.; Knowlton, S. F.

2015-12-15

Non-axisymmetric free-boundary equilibrium reconstructions of stellarator plasmas are performed for discharges in which the magnetic configuration is strongly modified by ohmically driven plasma current. These studies were performed on the compact toroidal hybrid device using the V3FIT reconstruction code with a set of 50 magnetic diagnostics external to the plasma. With the assumption of closed magnetic flux surfaces, the reconstructions using external magnetic measurements allow accurate estimates of the net toroidal flux within the last closed flux surface, the edge safety factor, and the plasma shape of these highly non-axisymmetric plasmas. The inversion radius of standard sawteeth is used tomore » infer the current profile near the magnetic axis; with external magnetic diagnostics alone, the current density profile is imprecisely reconstructed.« less

Non-axisymmetric equilibrium reconstruction of a current-carrying stellarator using external magnetic and soft x-ray inversion radius measurements

NASA Astrophysics Data System (ADS)

Ma, X.; Maurer, D. A.; Knowlton, S. F.; ArchMiller, M. C.; Cianciosa, M. R.; Ennis, D. A.; Hanson, J. D.; Hartwell, G. J.; Hebert, J. D.; Herfindal, J. L.; Pandya, M. D.; Roberds, N. A.; Traverso, P. J.

2015-12-01

Non-axisymmetric free-boundary equilibrium reconstructions of stellarator plasmas are performed for discharges in which the magnetic configuration is strongly modified by ohmically driven plasma current. These studies were performed on the compact toroidal hybrid device using the V3FIT reconstruction code with a set of 50 magnetic diagnostics external to the plasma. With the assumption of closed magnetic flux surfaces, the reconstructions using external magnetic measurements allow accurate estimates of the net toroidal flux within the last closed flux surface, the edge safety factor, and the plasma shape of these highly non-axisymmetric plasmas. The inversion radius of standard sawteeth is used to infer the current profile near the magnetic axis; with external magnetic diagnostics alone, the current density profile is imprecisely reconstructed.

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

NASA Astrophysics Data System (ADS)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

Non-axisymmetric equilibrium reconstruction of a current-carrying stellarator using external magnetic and soft x-ray inversion radius measurements

DOE PAGES

Ma, X.; Maurer, D. A.; Knowlton, Stephen F.; ...

2015-12-22

Non-axisymmetric free-boundary equilibrium reconstructions of stellarator plasmas are performed for discharges in which the magnetic configuration is strongly modified by ohmically driven plasma current. These studies were performed on the compact toroidal hybrid device using the V3FIT reconstruction code with a set of 50 magnetic diagnostics external to the plasma. With the assumption of closed magnetic flux surfaces, the reconstructions using external magnetic measurements allow accurate estimates of the net toroidal flux within the last closed flux surface, the edge safety factor, and the plasma shape of these highly non-axisymmetric plasmas. Lastly, the inversion radius of standard saw-teeth is usedmore » to infer the current profile near the magnetic axis; with external magnetic diagnostics alone, the current density profile is imprecisely reconstructed.« less

Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.

PubMed

Chandramohan, S; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; Kim, Taek Yong; Cho, Byung Jin; Suh, Eun-Kyung; Hong, Chang-Hee

2013-02-01

This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current-voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiO(x) interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Ohmic contact formation was realized when interlayer is introduced between the graphene and p-GaN followed by postmetallization annealing. Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. The tunneling mechanism results from the interfacial reactions that occur between the metal and p-GaN during the postmetallization annealing. InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. X-ray photoelectron spectroscopy provided evidence for the occurrence of phase transformation in the graphene-encased NiO(x) during the postmetallization annealing. The observed low light output is therefore correlated to the phase change induced transmittance loss in the NiO(x)/graphene electrode. These findings provide new insights into the behavior of different interlayers under processing conditions that will be useful for the future development of opto-electronic devices with graphene-based electrodes.

Pressurised electro-osmotic dewatering of activated and anaerobically digested sludges: electrical variables analysis.

PubMed

Citeau, M; Olivier, J; Mahmoud, A; Vaxelaire, J; Larue, O; Vorobiev, E

2012-09-15

Pressurised electro-osmotic dewatering (PEOD) of two sewage sludges (activated and anaerobically digested) was studied under constant electric current (C.C.) and constant voltage (C.V.) with a laboratory chamber simulating closely an industrial filter. The influence of sludge characteristics, process parameters, and electrode/filter cloth position was investigated. The next parameters were tested: 40 and 80 A/m², 20, 30, and 50 V-for digested sludge dewatering; and 20, 40 and 80 A/m², 20, 30, and 50 V-for activated sludge dewatering. Effects of filter cloth electric resistance and initial cake thickness were also investigated. The application of PEOD provides a gain of 12 points of dry solids content for the digested sludge (47.0% w/w) and for the activated sludge (31.7% w/w). In PEOD processed at C.C. or at C.V., the dewatering flow rate was similar for the same electric field intensity. In C.C. mode, both the electric resistance of cake and voltage increase, causing a temperature rise by ohmic effect. In C.V. mode, a current intensity peak was observed in the earlier dewatering period. Applying at first a constant current and later on a constant voltage, permitted to have better control of ohmic heating effect. The dewatering rate was not significantly affected by the presence of filter cloth on electrodes, but the use of a thin filter cloth reduced remarkably the energy consumption compared to a thicker one: 69% of reduction energy input at 45% w/w of dry solids content. The reduction of the initial cake thickness is advantageous to increase the final dry solids content. Copyright © 2012 Elsevier Ltd. All rights reserved.

Energy dissipation of composite multifilamentary superconductors for high-current ramp-field magnet applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gung, C.Y.

1993-01-01

Energy dissipation, which is also called AC loss, of a composite multifilamentary superconducting wire is one of the most fundamental concerns in building a stable superconducting magnet. Characterization and reduction of AC losses are especially important in designing a superconducting magnet for generating transient magnetic fields. The goal of this thesis is to improve the understanding of AC-loss properties of superconducting wires developed for high-current ramp-field magnet applications. The major tasks include: (1) building an advanced AC-loss measurement system, (2) measuring AC losses of superconducting wires under simulated pulse magnet operations, (3) developing an analytical model for explaining the newmore » AC-loss properties found in the experiment, and (4) developing a computational methodology for comparing AC losses of a superconducting wire with those of a cable for a superconducting pulse magnet. A new experimental system using an isothermal calorimetric method was designed and constructed to measure the absolute AC losses in a composite superconductor. This unique experimental setup is capable of measuring AC losses of a brittle Nb{sub 3}Sn wire carrying high AC current in-phase with a large-amplitude pulse magnetic field. Improvements of the accuracy and the efficiency of this method are discussed. Three different types of composite wire have been measured: a Nb{sub 3}Sn modified jelly-roll (MJR) internal-tin wire used in a prototype ohmic heating coil, a Nb{sub 3}Sn internal-tin wire developed for a fusion reactor ohmic heating coil, and a NbTi wire developed for the magnets in a particle accelerator. The cross sectional constructions of these wires represent typical commercial wires manufactured for pulse magnet applications.« less

Effect of counterions on the formation of ohmic contact between p-Si and poly(pyrrole) film - An ac impedance analysis

NASA Technical Reports Server (NTRS)

Nagsubramanian, G.; Distefano, S.; Moacanin, J.

1986-01-01

Conditions under which poly(pyrrole) (PP) films form ohmic contact with single-crystal p-Si are described. Counterions affect both the conductivity and flatband potential, V(FB), values of poly(pyrrole). While paratoluene-sulfonate-doped PP acts like a switch, the impedance behavior of PP films doped with ClO4(-), BF4(-), or PF6(-) allows evaluation of the V(FB) of these films. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP (ClO4) and PP films doped with other counterions, with p-Si, are explained in terms of conductivity of these films and V(FB) of PP films with respect to that of p-Si. PP film seems to passivate or block intrinsic surface states present on p-Si surface.

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Alfvén oscillations in ohmic discharges with runaway electrons in the TUMAN-3M tokamak

NASA Astrophysics Data System (ADS)

Tukachinsky, A. S.; Askinazi, L. G.; Balachenkov, I. M.; Belokurov, A. A.; Gin, D. B.; Zhubr, N. A.; Kornev, V. A.; Lebedev, S. V.; Khil'kevich, E. M.; Chugunov, I. N.; Shevelev, A. E.

2016-12-01

Studying the mechanism of Alfvén wave generation in plasma is important, since the interaction of these waves with energetic particles in tokamak-type reactors can increase the losses of energy and particles with the corresponding decrease in the efficiency of plasma heating and, under certain conditions, lead to the damage of structural elements of the system. Despite the previous detailed investigations of the excitation of Alfvén waves by superthermal particles in regimes with additional heating, the physics of Alfvén mode generation in discharges with ohmic heating of plasma is still not sufficiently studied. We have established that a significant factor inf luencing the development of Alfvén oscillations in ohmic discharge is the presence of runaway electrons. A physical mechanism explaining this relationship is proposed.

Ohmic ITBs in Alcator C-Mod

NASA Astrophysics Data System (ADS)

Rowan, William L.; Bespamyatnov, Igor O.; Fiore, C. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier (ITB) plasmas can arise spontaneously in Ohmic Alcator C-Mod plasmas. The operational prescription for the ITB include formation of an EDA H-mode in a toroidal magnetic field that is ramping down and a subsequent increase in the toroidal magnetic field. Like ITBs generated with off-axis ICRF heating, these have peaked pressure profiles which can be suppressed by on-axis ICRF heating. Recent work on onset conditions for the ICRF generated ITB (K. Zhurovich, et al., To be published in Nuclear Fusion) demonstrates that the broadening of the ion temperature profile due to off-axis ICRF reduces the ion temperature gradient and suppreses the ITG instability driven particle flux as the primary mechanism for ITB formation. The object of this study is to examine the characteristics of Ohmic ITBs to find whether this model for onset is supported.

Dynamics of a Landau-Zener transitions in a two-level system driven by a dissipative environment

NASA Astrophysics Data System (ADS)

Ateuafack, M. E.; Diffo, J. T.; Fai, L. C.

2016-02-01

The paper investigates the effects of a two-level quantum system coupled to transversal and longitudinal dissipative environment. The time-dependent phase accumulation, LZ transition probability and entropy in the presence of fast-ohmic, sub-ohmic and super-ohmic quantum noise are derived. Analytical results are obtained in terms of temperature, dissipation strength, LZ parameter and bath cutoff frequency. The bath is observed to modify the standard occupation difference by a decaying random phase factor and also produces dephasing during the transfer of population. The dephasing characteristics or the initial non-zero decoherence rate are observed to increase in time with the bath temperature and depend on the system-bath coupling strength and cutoff frequency. These parameters are found to strongly affect the memory and thus tailor the coherence process of the system.

Computational analysis of current-loss mechanisms in a post-hole convolute driven by magnetically insulated transmission lines

DOE PAGES

Rose, D.  V.; Madrid, E.  A.; Welch, D.  R.; ...

2015-03-04

Numerical simulations of a vacuum post-hole convolute driven by magnetically insulated vacuum transmission lines (MITLs) are used to study current losses due to charged particle emission from the MITL-convolute-system electrodes. This work builds on the results of a previous study [E.A. Madrid et al. Phys. Rev. ST Accel. Beams 16, 120401 (2013)] and adds realistic power pulses, Ohmic heating of anode surfaces, and a model for the formation and evolution of cathode plasmas. The simulations suggest that modestly larger anode-cathode gaps in the MITLs upstream of the convolute result in significantly less current loss. In addition, longer pulse durations leadmore » to somewhat greater current loss due to cathode-plasma expansion. These results can be applied to the design of future MITL-convolute systems for high-current pulsed-power systems.« less

Current injection and transport in polyfluorene

NASA Astrophysics Data System (ADS)

Yang, Chieh-Kai; Yang, Chia-Ming; Liao, Hua-Hsien; Horng, Sheng-Fu; Meng, Hsin-Fei

2007-08-01

A comprehensive numerical model is established for the electrical processes in a sandwich organic semiconductor device with high carrier injection barrier. The charge injection at the anode interface with 0.8eV energy barrier is dominated by the hopping among the gap states of the semiconductor caused by disorders. The Ohmic behavior at low voltage is demonstrated to be not due to the background doping but the filaments formed by conductive clusters. In bipolar devices with low work function cathode it is shown that near the anode the electron traps significantly enhance hole injection through Fowler-Nordheim tunneling, resulting in rapid increases of the hole carrier and current in comparison with the hole-only devices.

Effect of heating on the suppression of tearing modes in tokamaks.

PubMed

Classen, I G J; Westerhof, E; Domier, C W; Donné, A J H; Jaspers, R J E; Luhmann, N C; Park, H K; van de Pol, M J; Spakman, G W; Jakubowski, M W

2007-01-19

The suppression of (neoclassical) tearing modes is of great importance for the success of future fusion reactors like ITER. Electron cyclotron waves can suppress islands, both by driving noninductive current in the island region and by heating the island, causing a perturbation to the Ohmic plasma current. This Letter reports on experiments on the TEXTOR tokamak, investigating the effect of heating, which is usually neglected. The unique set of tools available on TEXTOR, notably the dynamic ergodic divertor to create islands with a fully known driving term, and the electron cyclotron emission imaging diagnostic to provide detailed 2D electron temperature information, enables a detailed study of the suppression process and a comparison with theory.

Ring discharge on the backsurface of a composite skin with ohmic anisotropy in response to frontal high current injection

NASA Astrophysics Data System (ADS)

Lee, T. S.; Robb, J. D.

The ring discharge hazard to a carbon-reinforced-composites fuel tank skin under lightning strike conditions is investigated. A model of anisotropy in electric conductivity is adopted whereby longitudinal conductivity and transverse conductivity are considered separately. It is concluded that the current flow pattern contains a stagnation-dominated near-field region and a geometry-dominated far-field decaying region. While this pattern is unaltered by anisotropy in conductivity, the accompanying nonliner electrical field pattern is greatly distorted. It is noted that conclusions applicable to the ignition hazard which were derived from the model of a uniform scalar conductivity for the skin still remain intact.

Dissipation in graphene and nanotube resonators

NASA Astrophysics Data System (ADS)

Seoánez, C.; Guinea, F.; Castro Neto, A. H.

2007-09-01

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

DOEpatents

Hogan, S.J.

1983-03-13

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

NASA Astrophysics Data System (ADS)

Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

2018-05-01

Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

COUPLED EVOLUTIONS OF THE STELLAR OBLIQUITY, ORBITAL DISTANCE, AND PLANET'S RADIUS DUE TO THE OHMIC DISSIPATION INDUCED IN A DIAMAGNETIC HOT JUPITER AROUND A MAGNETIC T TAURI STAR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Yu-Ling; Gu, Pin-Gao; Bodenheimer, Peter H.

We revisit the calculation of the ohmic dissipation in a hot Jupiter presented by Laine et al. by considering more realistic interior structures, stellar obliquity, and the resulting orbital evolution. In this simplified approach, the young hot Jupiter of one Jupiter mass is modeled as a diamagnetic sphere with a finite resistivity, orbiting across tilted stellar magnetic dipole fields in vacuum. Since the induced ohmic dissipation occurs mostly near the planet's surface, we find that the dissipation is unable to significantly expand the young hot Jupiter. Nevertheless, the planet inside a small corotation orbital radius can undergo orbital decay bymore » the dissipation torque and finally overfill its Roche lobe during the T Tauri star phase. The stellar obliquity can evolve significantly if the magnetic dipole is parallel/antiparallel to the stellar spin. Our results are validated by the general torque-dissipation relation in the presence of the stellar obliquity. We also run the fiducial model of Laine et al. and find that the planet's radius is sustained at a nearly constant value by the ohmic heating, rather than being thermally expanded to the Roche radius as suggested by the authors.« less

Current Saturation Avoidance with Real-Time Control using DPCS

NASA Astrophysics Data System (ADS)

Ferrara, M.; Hutchinson, I.; Wolfe, S.; Stillerman, J.; Fredian, T.

2008-11-01

Tokamak ohmic-transformer and equilibrium-field coils need to be able to operate near their maximum current capabilities. However if they reach their upper limit during high-performance discharges or in the presence of a strong off-normal event, shape control is compromised, and instability, even plasma disruptions can result. On Alcator C-Mod we designed and tested an anti-saturation routine which detects the impending saturation of OH and EF currents and interpolates to a neighboring safe equilibrium in real-time. The routine was implemented with a multi-processor, multi-time-scale control scheme, which is based on a master process and multiple asynchronous slave processes. The scheme is general and can be used for any computationally-intensive algorithm. USDoE award DE- FC02-99ER545512.

Reducing and measuring fluctuations in the MST RFP: Enhancement of energy confinement and measurement of the MHD dynamo

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D.J.; Almagri, A.F.; Cekic, M.

1996-09-01

A three- to five-fold enhancement of the energy confinement time in a reversed-field pinch (RFP) has been achieved in the Madison Symmetric Torus (MST) by reducing the amplitude of tearing mode fluctuations responsible for anomalous transport in the core of the RFP. By applying a transient poloidal inductive electric field to flatten the current density profile, the fluctuation amplitude {tilde b}/B decreases from 1.5% to 0.8%, the electron temperature T{sub e0} increases from 250 eV to 370 eV, the ohmic input power decreases from 4.5 MW to approximately 1.5 MW, the poloidal beta {beta}{sub 0} increases from 6% to 9%,more » and the energy confinement time {tau}{sub E} increases from 1 ms to {approximately}5 ms in I{sub {phi}} = 340 kA plasmas with density {tilde n} = 1 {times} 10{sup 19} m{sup -3}. Current profile control methods are being developed for the RFP in a program to eliminate transport associated with these current-gradient-driven fluctuations. In addition to controlling the amplitude of the tearing modes, we are vigorously pursuing an understanding of the physics of these fluctuations. In particular, plasma flow, both equilibrium and fluctuating, plays a critical role in a diversity of physical phenomena in MST. The key results: 1) Edge probe measurements show that the MHD dynamo is active in low collisionality plasmas, while at high collisionality a new mechanism, the `electron diamagnetic dynamo,` is observed. 2) Core spectroscopic measurements show that the toroidal velocity fluctuations of the plasma are coherent with the large-scale magnetic tearing modes; the scalar product of these two fluctuating quantities is similar to that expected for the MHD dynamo electromotive force. 3) Toroidal plasma flow in MST exhibits large radial shear and can be actively controlled, including unlocking locked discharges, by modifying E{sub r} with a robust biased probe. 24 refs.« less

Analysis of the interaction of an electron beam with back surface field solar cells

NASA Technical Reports Server (NTRS)

Von Roos, O.; Luke, K. L.

1983-01-01

In this paper the short circuit current Isc induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the Isc gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron-hole pair generation.

Low power consumption resistance random access memory with Pt/InOx/TiN structure

NASA Astrophysics Data System (ADS)

Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn

2013-09-01

In this study, the resistance switching characteristics of a resistive random access memory device with Pt/InOx/TiN structure is investigated. Unstable bipolar switching behavior is observed during the initial switching cycle, which then stabilizes after several switching cycles. Analyses indicate that the current conduction mechanism in the resistance state is dominated by Ohmic conduction. The decrease in electrical conductance can be attributed to the reduction of the cross-sectional area of the conduction path. Furthermore, the device exhibits low operation voltage and power consumption.

The Analysis of a Vortex Type Magnetohydrodynamic Induction Generator

NASA Technical Reports Server (NTRS)

Lengyel, L. L.

1962-01-01

Consideration it is given to the performance to the characteristics of an AC magnetohydrodynamic power generator, A rotating magnetic field is imposed on the vortex flow of an electrically conducting fluid, which is injected tangentially into an annulus formed by two nonconducting concentric cylinders and two nonconducting end plates. A perturbation technique is used to determine the two dimensional velocity and three dimensional electromagnetic field and current distributions. Finally, the generated power, the ohmic losses, the effective power and the electrical efficiency of the converter system are calculated.

Electric current heating calibration of a laser holographic nondestructive test system

NASA Technical Reports Server (NTRS)

Liu, H.-K.; Kurtz, R. L.

1975-01-01

Holographic NDT was used to measure small surface displacements controlled by electric heating by detecting the difference of the interference fringe patterns as viewed through the hologram on a real time basis. A perforated aluminum test plate, with the holes used to position thin metal foils, was used in the experiment. One of the foils was connected to an electric power source and small displacements of the foil were caused and controlled by Ohmic heating. An He-Ne laser was used to perform the holography.

Cryogenic focussing, ohmically heated on-column trap

NASA Technical Reports Server (NTRS)

Springston, Stephen R.

1991-01-01

A procedure is described for depositing a conductive layer of gold on the exterior of a fused-silica capillary used in gas chromatography. By subjecting a section of the column near the inlet to a thermal cycle of cryogenic cooling and ohmic heating, volatile samples are concentrated and subsequently injected. The performance of this trap as a chromatographic injector is demonstrated. Several additional applications are suggested and the unique properties of this device are discussed.

Selective Dry Etch for Defining Ohmic Contacts for High Performance ZnO TFTs

DTIC Science & Technology

2014-03-27

scale, high-frequency ZnO thin - film transistors (TFTs) could be fabricated. Molybdenum, tantalum, titanium tungsten 10-90, and tungsten metallic contact... thin - film transistor layout utilized in the thesis research . . . . . 42 3.4 Process Flow Diagram for Optical and e-Beam Devices...TFT thin - film transistor TLM transmission line model UV ultra-violet xvii SELECTIVE DRY ETCH FOR DEFINING OHMIC CONTACTS FOR HIGH PERFORMANCE ZnO TFTs

Graphene in ohmic contact for both n-GaN and p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Haijian; Liu, Zhenghui; Shi, Lin

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN andmore » thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.« less

Germanium- and tellurium-doped GaAs for non-alloyed p-type and n-type ohmic contacts

NASA Astrophysics Data System (ADS)

Park, Joongseo; Barnes, Peter A.; Lovejoy, Michael L.

1995-08-01

Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for the n-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, rc, as low as rcp=2.9×10-6 ohm-cm 2 for Ge doping of p=(Na-Nd)=6.0×1019 holes/cm3 was measured for p-contacts and rcn=9.6×10-5 ohm-cm2 was measured for Te doping of n=(Nd-Na)=8.9×1018 electrons/cm3 for GaAs metallized with non-alloyed contacts of Ti/Al.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Douglas, E. A.; Reza, S.; Sanchez, C.

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer

NASA Astrophysics Data System (ADS)

Liang, Feng; Zhao, Degang; Jiang, Desheng; Liu, Zongshun; Zhu, Jianjun; Chen, Ping; Yang, Jing; Liu, Wei; Li, Xiang; Liu, Shuangtao; Xing, Yao; Zhang, Liqun; Yang, Hui; Long, Heng; Li, Mo

2017-06-01

Growth conditions are used to control the residual carbon impurity incorporation in p++-GaN layers. Specific contact resistance (ρc) with various residual carbon concentrations has been investigated through the circular transmission line model (CTLM) method and secondary ion mass spectroscopy (SIMS) analysis. A correlation between residual carbon and ρc indicates that incorporation of proper carbon impurity can be an advantage for Ohmic contact, although carbon can also act as a compensating donor to worsen the Ohmic contact at a very high concentration. Finally, ρc is improved to 6.80 × 10-5 Ω × cm2 with a carbon concentration of 8.3 × 1017 cm-3 in p++-GaN layer, when the growth temperature, pressure and flow rate of CP2Mg and TMGa are 940 °C, 100 Torr, 3 μmol/min and 28 μmol/min, respectively.

Planarized arrays of aligned, untangled multiwall carbon nanotubes with Ohmic back contacts

DOE PAGES

Rochford, C.; Limmer, S. J.; Howell, S. W.; ...

2014-11-26

Vertically aligned, untangled planarized arrays of multiwall carbon nanotubes (MWNTs) with Ohmic back contacts were grown in nanopore templates on arbitrary substrates. The templates were prepared by sputter depositing Nd-doped Al films onto W-coated substrates, followed by anodization to form an aluminum oxide nanopore array. The W underlayer helps eliminate the aluminum oxide barrier that typically occurs at the nanopore bottoms by instead forming a thin WO 3 layer. The WO 3 can be selectively etched to enable electrodeposition of Co catalysts with control over the Co site density. This led to control of the site density of MWNTs grownmore » by thermal chemical vapor deposition, with the W also serving as a back electrical contact. As a result, Ohmic contact to MWNTs was confirmed, even following ultrasonic cutting of the entire array to a uniform height.« less

Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yue; Lu, Wu-yue; Wang, Tao

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA,more » which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.« less

The dependence of divertor power sharing on magnetic flux balance in near double-null configurations on Alcator C-Mod

NASA Astrophysics Data System (ADS)

Brunner, D.; Kuang, A. Q.; LaBombard, B.; Terry, J. L.

2018-07-01

Management of power exhaust will be a crucial task for tokamak fusion reactors. Reactor concepts are often proposed with double-null divertors, i.e. having two magnetic separatrices in an up-down symmetric configuration. This arrangement is potentially advantageous since the majority of the tokamak exhaust power tends to flow to the outer pair of divertor legs at large major radius, where the geometry is favorable for spreading the heat over a large surface area and there is more room for advanced divertor configurations. Despite the importance, there have been relatively few studies of divertor power sharing in near double null configurations and no studies at the poloidal magnetic fields and scrape-off layer power widths anticipated for a reactor. Motivated by this need we have undertaken a systematic study on Alcator C-Mod, examining the effect of magnetic flux balance on the power sharing among the four divertor legs in near double-null plasmas. Ohmic L-modes at three values of plasma current and ICRF-heated enhanced D-alpha (EDA) H-modes and I-modes at a single value of plasma current are explored, producing poloidal magnetic fields of 0.42, 0.62 and 0.85 Tesla. For Ohmic L-modes and ICRF-heated EDA H-modes, we find that the point of equal power sharing between upper and lower divertors occurs remarkably close to a balanced double null. Power sharing amongst the outer (upper versus lower) and inner (upper versus lower) pairs of divertors can be described in terms of a logistic function of magnetic flux balance, consistent with heat flux mapping along magnetic field lines to the outer midplane. Power sharing between inner and outer legs is found to follow a Gaussian-like function of magnetic flux balance with non-zero power to the inner divertors at double null. The overall behavior of H-modes operated near double null and for I-modes operating to within one heat flux e-folding of double null are found similar to Ohmic L-modes, with a significant reduction of power on the inner divertor legs. The results are encapsulated in terms of empirically-informed analytic functions of magnetic flux balance. When combined with magnetic equilibrium control system specifications, these relationships can be used to specify the power flux handling requirements for each of the four divertor target plates.

Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymer

NASA Astrophysics Data System (ADS)

Ioannidis, Andronique; Facci, John S.; Abkowitz, Martin A.

1998-08-01

Injection efficiency from evaporated Au contacts on a molecularly doped polymer (MDP) system has been previously observed to evolve from blocking to ohmic over time. In the present article this contact forming phenomenon is analyzed in detail. The initially blocking nature of the Au contact is in contrast with that expected from the relative workfunctions of Au and of the polymer which suggest Au should inject holes efficiently. It is also in apparent contrast to a differently prepared interface of the same materials. The phenomenon is not unique to this interface, having been confirmed also for evaporated Ag and mechanically made liquid Hg contacts on the same MDP. The MDP is a disordered solid state solution of electroactive triarylamine hole transporting TPD molecules in a polycarbonate matrix. The trap-free hole-transport MDP provides a model system for the study of metal/polymer interfaces by enabling the use of a recently developed technique that gives a quantitative measure of contact injection efficiency. The technique combines field-dependent steady state injection current measurements at a contact under test with time-of-flight (TOF) mobility measurements made on the same sample. In the present case, MDP films were prepared with two top vapor-deposited contacts, one of Au (test contact) and one of Al (for TOF), and a bottom carbon-loaded polymer electrode which is known to be ohmic for hole injection. The samples were aged at various temperatures below the glass transition of the MDP (85 °C) and the evolution of current versus field and capacitance versus frequency behaviors are followed in detail over time and analyzed. Control measurements ensure that the evolution of the electrical properties is due to the Au/polymer interface behavior and not the bulk. All evaporated Au contacts eventually achieved ohmic injection. The evaporated Au/MDP interface was also investigated by transmission electron microscopy as a function of time and showed no evidence of Au interdiffusion in the MDP layer, remaining abrupt to within ˜10 Å over the course of the evolution in injection efficiency. Mechanisms related to Au penetration into the MDP are therefore unlikely. Rapid sequence data acquisition enabled the detection of two main processes in the injection evolution. The evolving injection efficiency is very well fit by two exponentials, enabling the characterization of time and temperature dependence of the evolution processes.

Mechanisms of the passage of dark currents through Cd(Zn)Te semi-insulating crystals

NASA Astrophysics Data System (ADS)

Sklyarchuk, V.; Fochuk, P.; Rarenko, I.; Zakharuk, Z.; Sklyarchuk, O.; Nykoniuk, Ye.; Rybka, A.; Kutny, V.; Bolotnikov, A. E.; James, R. B.

2014-09-01

We investigated the passage of dark currents through semi-insulating crystals of Cd(Zn)Te with weak n-type conductivity that are used widely as detectors of ionizing radiation. The crystals were grown from a tellurium solution melt at 800 оС by the zone-melting method, in which a polycrystalline rod in a quartz ampoule was moved through a zone heater at a rate of 2 mm per day. The synthesis of the rod was carried out at ~1150 оС. We determined the important electro-physical parameters of this semiconductor, using techniques based on a parallel study of the temperature dependence of current-voltage characteristics in both the ohmic and the space-charge-limited current regions. We established in these crystals the relationship between the energy levels and the concentrations of deep-level impurity states, responsible for dark conductivity and their usefulness as detectors.

Passive runaway electron suppression in tokamak disruptions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, H. M.; Helander, P.; Boozer, A. H.

2013-07-15

Runaway electrons created in disruptions pose a serious problem for tokamaks with large current. It would be desirable to have a runaway electron suppression method which is passive, i.e., a method that does not rely on an uncertain disruption prediction system. One option is to let the large electric field inherent in the disruption drive helical currents in the wall. This would create ergodic regions in the plasma and increase the runaway losses. Whether these regions appear at a suitable time and place to affect the formation of the runaway beam depends on disruption parameters, such as electron temperature andmore » density. We find that it is difficult to ergodize the central plasma before a beam of runaway current has formed. However, the ergodic outer region will make the Ohmic current profile contract, which can lead to instabilities that yield large runaway electron losses.« less

ZnO Schottky barriers and Ohmic contacts

NASA Astrophysics Data System (ADS)

Brillson, Leonard J.; Lu, Yicheng

2011-06-01

ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n-type versus p-type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.

MAGNETIC SCALING LAWS FOR THE ATMOSPHERES OF HOT GIANT EXOPLANETS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menou, Kristen

2012-02-01

We present scaling laws for advection, radiation, magnetic drag, and ohmic dissipation in the atmospheres of hot giant exoplanets. In the limit of weak thermal ionization, ohmic dissipation increases with the planetary equilibrium temperature (T{sub eq} {approx}> 1000 K) faster than the insolation power does, eventually reaching values {approx}> 1% of the insolation power, which may be sufficient to inflate the radii of hot Jupiters. At higher T{sub eq} values still magnetic drag rapidly brakes the atmospheric winds, which reduces the associated ohmic dissipation power. For example, for a planetary field strength B = 10 G, the fiducial scaling lawsmore » indicate that ohmic dissipation exceeds 1% of the insolation power over the equilibrium temperature range T{sub eq} {approx} 1300-2000 K, with a peak contribution at T{sub eq} {approx} 1600 K. Evidence for magnetically dragged winds at the planetary thermal photosphere could emerge in the form of reduced longitudinal offsets for the dayside infrared hotspot. This suggests the possibility of an anticorrelation between the amount of hotspot offset and the degree of radius inflation, linking the atmospheric and interior properties of hot giant exoplanets in an observationally testable way. While providing a useful framework to explore the magnetic scenario, the scaling laws also reveal strong parameter dependencies, in particular with respect to the unknown planetary magnetic field strength.« less

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Destruction of Bacillus cereus spores in a thick soy bean paste (doenjang) by continuous ohmic heating with five sequential electrodes.

PubMed

Ryang, J H; Kim, N H; Lee, B S; Kim, C T; Rhee, M S

2016-07-01

This study selected spores from Bacillus cereus FSP-2 strain (the isolate from a commercial doenjang processing line) as the test strain which showed significantly higher thermal resistance (P < 0·05) than B. cereus reference strain (ATCC 27348). The spores in doenjang were subjected to ohmic heating (OH) at 95, 105, 115 and 125°C for 30, 60 or 90 s using a five sequential electrode system (electrical field: 26·7 V cm(-1) ; alternating current frequency: 25 kHz). OH at 105°C for 30-90 s reduced the B. cereus spore count in doenjang samples to <4 log CFU g(-1) . Since OH treatment at 115 and 125°C caused a perceivable colour change in the product (>1·5 National Bureau of Standards units), treatment at 105°C for 60 s was selected and applied on a large scale (500 kg of product). Reliable and reproducible destruction of B. cereus spores occurred; the reductions achieved (to < 4 log CFU g(-1) ) met the Korean national standards. Scanning electron microscopy revealed microstructural alterations in the spores (shrinkage and a distorted outer spore coat). OH is an effective method for destroying B. cereus spores to ensure the microbiological quality and safety of a thick, highly viscous sauce. This study shows that an ohmic heating (OH) using a five sequential electrode system can effectively destroy highly heat-resistant Bacillus cereus spores which have been frequently found in a commercial doenjang processing line without perceivable quality change in the product. In addition, it may demonstrate high potential of the unique OH system used in this study that will further contribute to ensure microbiological quality and safety of crude sauces containing high levels of electrolyte other than doenjang as well. © 2016 The Society for Applied Microbiology.

CHI during an ohmic discharge in HIT-II

NASA Astrophysics Data System (ADS)

Mueller, Dennis; Nelson, Brian A.; Redd, Aaron J.; Hamp, William T.

2004-11-01

Coaxial Helicity Injection (CHI) has been used on the National Spherical Torus Experiment (NSTX), the Helicity Injected Torus (HIT) and HIT-II to initiate plasma and to drive up to 400 kA of toroidal current. The primary goal of the CHI systems is to provide a start-up plasma with substantial toroidal current that can be heated and sustained with other methods. We have investigated the use of CHI systems to add current to an established, inductively driven plasma. This may be an attractive method to add edge current that may modify the stability characteristics of the discharge or modify the particle and energy transport in a spherical torus. For example, divertor biasing experiments have been successful in modifying particle and energy transport in the scrape-off layer of tokamaks. Use of IGBT power supplies to modulate the injector current makes analysis of current penetration feasible by comparisons of before and after CHI using EFIT analysis of the data.

Unidirectional oxide hetero-interface thin-film diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Youngmin; Lee, Eungkyu; Lee, Jinwon

2015-10-05

The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing amore » high feasibility for practical applications.« less

Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes.

PubMed

Liu, Juqing; Yin, Zongyou; Cao, Xiehong; Zhao, Fei; Lin, Anping; Xie, Linghai; Fan, Quli; Boey, Freddy; Zhang, Hua; Huang, Wei

2010-07-27

A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current-voltage (I-V) characteristics of the fabricated device showed the electrical bistability with a write-once-read-many-times (WORM) memory effect. The memory device exhibits a high ON/OFF ratio (10(4)-10(5)) and low switching threshold voltage (0.5-1.2 V), which are dependent on the sheet resistance of rGO electrode. Our experimental results confirm that the carrier transport mechanisms in the OFF and ON states are dominated by the thermionic emission current and ohmic current, respectively. The polarization of PCBM domains and the localized internal electrical field formed among the adjacent domains are proposed to explain the electrical transition of the memory device.

Magnetic heating of stellar chromospheres and coronae

NASA Astrophysics Data System (ADS)

van Ballegooijen, A. A.

The theoretical discussion of magnetic heating focuses on heating by dissipation of field-aligned electric currents. Several mechanisms are set forth to account for the very high current densities needed to generate the heat, but observed radiative losses do not justify the resultant Ohmic heating rate. Tearing modes, 'turbulent resistivity', and 'hyper-resistivity' are considered to resolve the implied inefficiency of coronal heating. Because the mechanisms are not readily applicable to the sun, transverse magnetic energy flows and magnetic flare release are considered to account for the magnitude of observed radiative loss. High-resolution observations of the sun are concluded to be an efficient way to examine the issues of magnetic heating in spite of the very small spatial scales of the heating processes.

Reducing current reversal time in electric motor control

DOEpatents

Bredemann, Michael V

2014-11-04

The time required to reverse current flow in an electric motor is reduced by exploiting inductive current that persists in the motor when power is temporarily removed. Energy associated with this inductive current is used to initiate reverse current flow in the motor.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contactmore » resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.« less

A physics-based fractional order model and state of energy estimation for lithium ion batteries. Part I: Model development and observability analysis

NASA Astrophysics Data System (ADS)

Li, Xiaoyu; Fan, Guodong; Pan, Ke; Wei, Guo; Zhu, Chunbo; Rizzoni, Giorgio; Canova, Marcello

2017-11-01

The design of a lumped parameter battery model preserving physical meaning is especially desired by the automotive researchers and engineers due to the strong demand for battery system control, estimation, diagnosis and prognostics. In light of this, a novel simplified fractional order electrochemical model is developed for electric vehicle (EV) applications in this paper. In the model, a general fractional order transfer function is designed for the solid phase lithium ion diffusion approximation. The dynamic characteristics of the electrolyte concentration overpotential are approximated by a first-order resistance-capacitor transfer function in the electrolyte phase. The Ohmic resistances and electrochemical reaction kinetics resistance are simplified to a lumped Ohmic resistance parameter. Overall, the number of model parameters is reduced from 30 to 9, yet the accuracy of the model is still guaranteed. In order to address the dynamics of phase-change phenomenon in the active particle during charging and discharging, variable solid-state diffusivity is taken into consideration in the model. Also, the observability of the model is analyzed on two types of lithium ion batteries subsequently. Results show the fractional order model with variable solid-state diffusivity agrees very well with experimental data at various current input conditions and is suitable for electric vehicle applications.

Operando μ-Raman study of the actual water content of perfluorosulfonic acid membranes in the fuel cell

NASA Astrophysics Data System (ADS)

Peng, Zhe; Badets, Vasilica; Huguet, Patrice; Morin, Arnaud; Schott, Pascal; Tran, Thi Bich Hue; Porozhnyy, Mikhaël; Nikonenko, Victor; Deabate, Stefano

2017-07-01

Operando μ-Raman spectroscopy is used to probe the water distribution across Nafion® and Aquivion™ membranes in the operating fuel cell. The through-plane water concentration profile is obtained with μm resolution at the middle of the active surface, both at the gas distribution channel and at the under-lands areas. Depth-resolved measurements carried out at room temperature show that the water content of both membranes increases with the increase of the feed gas relative humidity and decreases with the increase of stoichiometry. At given relative humidity and stoichiometry conditions, the water content first increases at the fuel cell start-up and, then, decreases progressively with the increase of the current density delivered by the cell. The water loss is due to the concomitant rise of pressure drops and of the cell inner temperature, the latter giving the larger contribution. Pressure drops are related to the increase of the feed gases fluxes while temperature rise is due to increasing ohmic losses and heat from the electrochemical reaction. Compared to Nafion, Aquivion exhibits larger water content, but similar dehydration rate as a function of ohmic losses, and larger water accumulation at the under-lands area compared to channel.

Effects of hydrogen treatment on ohmic contacts to p-type GaN films

NASA Astrophysics Data System (ADS)

Huang, Bohr-Ran; Chou, Chia-Hui; Ke, Wen-Cheng; Chou, Yi-Lun; Tsai, Chia-Lung; Wu, Meng-chyi

2011-06-01

This study investigated the effects of hydrogen (H 2) treatment on metal contacts to Mg-doped p-GaN films by Hall-effect measurement, current-voltage ( I- V) analyzer and X-ray photoemission spectra (XPS). The interfacial oxide layer on the p-GaN surface was found to be the main reason for causing the nonlinear I- V behavior of the untreated p-GaN films. The increased nitrogen vacancy (V N) density due to increased GaN decomposition rate at high-temperature hydrogen treatment is believed to form high density surface states on the surface of p-GaN films. Compared to untreated p-GaN films, the surface Fermi level determined by the Ga 2p core-level peak on 1000 °C H 2-treated p-GaN films lies about ˜2.1 eV closer to the conduction band edge (i.e., the surface inverted to n-type behavior). The reduction in barrier height due to the high surface state density pinned the surface Fermi level close to the conduction band edge, and allowed the electrons to easily flow over the barrier from the metal into the p-GaN films. Thus, a good ohmic contact was achieved on the p-GaN films by the surface inversion method.

Effects of sol aging on resistive switching behaviors of HfOx resistive memories

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Tsao, Che-Chang; Chen, Yu-Ting

2017-03-01

This work investigates effects of long-term sol-aging time on sol-gel HfOx resistive random access memories (RRAMs). A nontoxic solvent of ethanol is used to replace toxic 2-methoxyethanol, which is usually used in sol-gel processes. The top electrodes are fabricated by pressing indium balls onto the HfOx surface rather than by using conventional sputtering or evaporation processes. The maximum process temperature is limited to be 100 ℃. Therefore, influences of plasma and high temperature on HfOx film can be avoided. Under this circumstance, effects of sol aging time on the HfOx films can be more clearly studied. The current conduction mechanisms in low and high electric regions of the HfOx RRAM are found to be dominated by Ohmic conduction and trap-filled space charge limited conduction (TF-SCLC), respectively. When the sol aging time increases, the resistive switching characteristic of the HfOx layer becomes unstable and the transition voltage from Ohmic conduction to TF-SCLC is also increased. This suggests that an exceedingly long aging time will give a HfOx film with more defect states. The XPS results are consistent with FTIR analysis and they can further explain the unstable HfOx resistive switching characteristic induced by sol aging.

Tunable ohmic environment using Josephson junction chains

NASA Astrophysics Data System (ADS)

Rastelli, Gianluca; Pop, Ioan M.

2018-05-01

We propose a scheme to implement a tunable, wide frequency-band dissipative environment using a double chain of Josephson junctions. The two parallel chains consist of identical superconducting quantum interference devices (SQUIDs), with magnetic-flux tunable inductance, coupled to each other at each node via a capacitance much larger than the junction capacitance. Thanks to this capacitive coupling, the system sustains electromagnetic modes with a wide frequency dispersion. The internal quality factor of the modes is maintained as high as possible, and the damping is introduced by a uniform coupling of the modes to a transmission line, itself connected to an amplification and readout circuit. For sufficiently long chains, containing several thousands of junctions, the resulting admittance is a smooth function versus frequency in the microwave domain, and its effective dissipation can be continuously monitored by recording the emitted radiation in the transmission line. We show that by varying in situ the SQUIDs' inductance, the double chain can operate as a tunable ohmic resistor in a frequency band spanning up to 1 GHz, with a resistance that can be swept through values comparable to the resistance quantum Rq=h /(4 e2) ≃6.5 kΩ . We argue that the circuit complexity is within reach using current Josephson junction technology.

Whey acerola-flavoured drink submitted ohmic heating processing: Is there an optimal combination of the operational parameters?

PubMed

Cappato, Leandro P; Ferreira, Marcus Vinícius S; Pires, Roberto P S; Cavalcanti, Rodrigo N; Bisaggio, Rodrigo C; Freitas, Mônica Q; Silva, Marcia C; Cruz, Adriano G

2018-04-15

Whey acerola-flavoured drink was treated using ohmic heating (OH) at 65°C for 30min to evaluate different frequencies (10, 100 and 1000Hz with 25V) and voltages (45, 60 and 80V at 60Hz) and by conventional heating (CH) with the same temperature profile (65°C/30min). Rheology parameters, color changes (h°, C∗, ΔE) microstructure (optical microscopy), and ascorbic acid (AA) degradation kinetics were performed. AA degradation rates ranged from 1.7 to 29.3% and from 2.8 to 24.8% for OH and CH, respectively. The beverages treated with both processes exhibited a pseudo-plastic behavior (n<1), higher saturation (C∗), lesser reddish color (h°), and higher color variations (ΔE∗). In microstructure analysis, OH (1000Hz-25V and 80V-60Hz) was able to rupture the cell structure. The best results were observed at low frequencies and voltage OH processes on whey acerola-flavoured drinks should be performed at low frequencies and voltages (≤100Hz and 45V), an alternating current (A/C). However, despite the use of inert electrodes, the existence of corrosion was not evaluated, being an important information to be investigated. Copyright © 2017 Elsevier Ltd. All rights reserved.

Crystal growth and analysis of ohmic contact and magneto-optical isolator properties of cadmium manganese telluride

NASA Astrophysics Data System (ADS)

Prakasam, Mythili; Viraphong, Oudomsack; Teulé-Gay, Lionel; Decourt, Rodolphe; Veber, Philippe; Víllora, Encarnación G.; Shimamura, Kiyoshi

2011-03-01

Cd1-xMnxTe (x=0.1, 0.3, 0.5, 0.7 and 0.9) (CMT) single crystals were grown by the vertical Bridgman method. The optical studies reveal that with the increase in Mn concentration, the band gap values increase, which is attributed to s, p-d exchange interaction between the band carriers and Mn ions. Faraday rotation angle of the grown CMT (x=0.5) crystals were measured at the following wavelengths: 825, 1060 and 1575 nm. It was inferred that CMT exhibit larger Faraday effect (3-6 times larger than terbium-gallium garnet (TGG) currently used for optical isolators) making it as an efficient material for optical isolator at longer wavelengths. Field-cooled and zero field-cooled magnetizations of CMT were measured as a function of temperature and magnetic field. The spin-glass like behavior of CMT and their tendency to decrease in magnitude with increasing Mn concentration have been analyzed. The metal contacts on the Cd1-xMnxTe (x=0.1, 0.5, 0.7 and 0.9) crystals have been made with various metals and metal alloys to establish the ohmic contact. The detector characteristics of CMT have been tested using γ-rays with 511 keV (22 Na) and 59.5 keV (241 Am).

Chemical and physical pretreatments of fruits and vegetables: Effects on drying characteristics and quality attributes - a comprehensive review.

PubMed

Deng, Li-Zhen; Mujumdar, Arun S; Zhang, Qian; Yang, Xu-Hai; Wang, Jun; Zheng, Zhi-An; Gao, Zhen-Jiang; Xiao, Hong-Wei

2017-12-20

Pretreatment is widely used before drying of agro-products to inactivate enzymes, enhance drying process and improve quality of dried products. In current work, the influence of various pretreatments on drying characteristics and quality attributes of fruits and vegetables is summarized. They include chemical solution (hyperosmotic, alkali, sulfite and acid, etc.) and gas (sulfur dioxide, carbon dioxide and ozone) treatments, thermal blanching (hot water, steam, super heated steam impingement, ohmic and microwave heating, etc), and non-thermal process (ultrasound, freezing, pulsed electric field, and high hydrostatic pressure, etc). Chemical pretreatments effectively enhance drying kinetics, meanwhile, it causes soluble nutrients losing, trigger food safety issues by chemical residual. Conventional hot water blanching has significant effect on inactivating various undesirable enzymatic reactions, destroying microorganisms, and softening the texture, as well as facilitating drying rate. However, it induces undesirable quality of products, e.g., loss of texture, soluble nutrients, pigment and aroma. Novel blanching treatments, such as high-humidity hot air impingement blanching, microwave and ohmic heat blanching can reduce the nutrition loss and are more efficient. Non-thermal technologies can be a better alternative to thermal blanching to overcome these drawbacks, and more fundamental researches are needed for better design and scale up.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reshetenko, T. V.; Bender, G.; Bethune, K.

The overall current density that is measured in a proton exchange membrane fuel cell (PEMFC) represents the average of the local reaction rates. The overall and local PEMFC performances are determined by several primary loss mechanisms, namely activation, ohmic, and mass transfer. Spatial performance and loss variabilities are significant and depend on the cell design and operating conditions. A segmented cell system was used to quantify different loss distributions along the gas channel to understand the effects of gas humidification. A reduction in the reactant stream humidification decreased cell performance and resulted in non-uniform distributions of overpotentials and performance alongmore » the flow field. Activation and ohmic overpotentials increased with a relative humidity decrease due to insufficient membrane and catalyst layer hydration. The relative humidity of the cathode had a strong impact on the mass transfer overpotential due to a lower oxygen permeability through the dry Nafion film covering the catalyst surface. The mass transfer loss distribution was non-uniform, and the mass transfer overpotential increased for the outlet segments due to the oxygen consumption at the inlet segments, which reduced the oxygen concentration downstream, and a progressive water accumulation from upstream segments. Electrochemical impedance spectroscopy (EIS) and an equivalent electric circuit (EEC) facilitated the analysis and interpretation of the segmented cell data.« less

Fabrication of SWCNT based flexible chemiresistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajput, Mayank, E-mail: mnk.rajput1@gmail.com; Das, S.; Kaur, Rajvinder

2016-04-13

Carboxyl (-COOH) functionalized SWCNT chemiresistors have been realized on Kapton substrate patterned with Au microelectrodes by the drop casting of functionalized SWCNT dispersion in DI water. I-V measurements on fabricated chemiresistor showed ohmic behavior at different temperatures (25°C-120°C). The effect of bending on flexible functionalized SWCNT chemiresistor for different diameter has been measured. It has been found that bending at different radius of curvature doesn’t change the ohmic behavior of fabricated chemiresistor. Achieved results are promising for cheap flexible electronic devices.

AC electrokinetic manipulation of selenium nanoparticles for potential nanosensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahmoodi, Seyed Reza; Bayati, Marzieh, E-mail: m-bayati@tums.ac.ir; Hosseinirad, Somayeh

2013-03-15

Highlights: ► Se nanoparticles were synthesized using a reverse-microemulsion process. ► AC osmotic fluid flow repulses the particles from electrode edges. ► Dielectrophoretic force attracts the particles to electrode edges. ► Dielectrophoresis electrode showed non-ohmic behavior. ► The device can potentially be used as a nanosensor. - Abstract: We report the AC electrokinetic behavior of selenium (Se) nanoparticles for electrical characterization and possible application as micro/nano devices. selenium Se nanoparticles were successfully synthesized using a reverse-microemulsion process and investigated structurally using X-ray diffraction and transmission electron microscope. Interdigitated castellated ITO and non-castellated platinum electrodes were employed for manipulation of suspendedmore » materials in the fluid. Using ITO electrodes at low frequency limits resulted in deposition of Se particles on electrode surface. When Se particles exposed to platinum electrodes in the 10 Hz–1 kHz range and V {sub p−p}> 8, AC osmotic fluid flow repulses the particles from electrode edges. However, in 10 kHz–10 MHz range and V {sub p−p}> 5, dielectrophoretic force attracts the particles to electrode edges. As the Se particle concentration increased, the trapped Se particles were aligned along the electric field line and bridged the electrode gap. The device was characterized and can potentially be useful in making micro/nano electronic devices.« less

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

NASA Astrophysics Data System (ADS)

Radulescu, Fabian

2000-12-01

Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Vázquez, L.; Alves, L. C.; Corregidor, V.; Romero, M. F.; Pantellini, A.; Lanzieri, C.; Muñoz, E.

2014-05-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAlx and AuAlx phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals.

The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X. J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.

2014-10-28

The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50 nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease themore » barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.« less

In situ ohmic contact formation for n-type Ge via non-equilibrium processing

NASA Astrophysics Data System (ADS)

Prucnal, S.; Frigerio, J.; Napolitani, E.; Ballabio, A.; Berencén, Y.; Rebohle, L.; Wang, M.; Böttger, R.; Voelskow, M.; Isella, G.; Hübner, R.; Helm, M.; Zhou, S.; Skorupa, W.

2017-11-01

Highly scaled nanoelectronics requires effective channel doping above 5 × 1019 cm-3 together with ohmic contacts with extremely low specific contact resistivity. Nowadays, Ge becomes very attractive for modern optoelectronics due to the high carrier mobility and the quasi-direct bandgap, but n-type Ge doped above 5 × 1019 cm-3 is metastable and thus difficult to be achieved. In this letter, we report on the formation of low-resistivity ohmic contacts in highly n-type doped Ge via non-equilibrium thermal processing consisting of millisecond-range flash lamp annealing. This is a single-step process that allows for the formation of a 90 nm thick NiGe layer with a very sharp interface between NiGe and Ge. The measured carrier concentration in Ge is above 9 × 1019 cm-3 with a specific contact resistivity of 1.2 × 10-6 Ω cm2. Simultaneously, both the diffusion and the electrical deactivation of P are fully suppressed.

Microbial desalination cells packed with ion-exchange resin to enhance water desalination rate.

PubMed

Morel, Alexandre; Zuo, Kuichang; Xia, Xue; Wei, Jincheng; Luo, Xi; Liang, Peng; Huang, Xia

2012-08-01

A novel configuration of microbial desalination cell (MDC) packed with ion-exchange resin (R-MDC) was proposed to enhance water desalination rate. Compared with classic MDC (C-MDC), an obvious increase in desalination rate (DR) was obtained by R-MDC. With relatively low concentration (10-2 g/L NaCl) influents, the DR values of R-MDC were about 1.5-8 times those of C-MDC. Ion-exchange resins packed in the desalination chamber worked as conductor and thus counteracted the increase in ohmic resistance during treatment of low concentration salt water. Ohmic resistances of R-MDC stabilized at 3.0-4.7 Ω. By contrast, the ohmic resistances of C-MDC ranged from 5.5 to 12.7 Ω, which were 55-272% higher than those of R-MDC. Remarkable improvement in desalination rate helped improve charge efficiency for desalination in R-MDC. The results first showed the potential of R-MDC in the desalination of water with low salinity. Copyright © 2012 Elsevier Ltd. All rights reserved.

Transition of multidiffusive states in a biased periodic potential

NASA Astrophysics Data System (ADS)

Zhang, Jia-Ming; Bao, Jing-Dong

2017-03-01

We study a frequency-dependent damping model of hyperdiffusion within the generalized Langevin equation. The model allows for the colored noise defined by its spectral density, assumed to be proportional to ωδ -1 at low frequencies with 0 <δ <1 (sub-Ohmic damping) or 1 <δ <2 (super-Ohmic damping), where the frequency-dependent damping is deduced from the noise by means of the fluctuation-dissipation theorem. It is shown that for super-Ohmic damping and certain parameters, the diffusive process of the particle in a titled periodic potential undergos sequentially four time regimes: thermalization, hyperdiffusion, collapse, and asymptotical restoration. For analyzing transition phenomenon of multidiffusive states, we demonstrate that the first exist time of the particle escaping from the locked state into the running state abides by an exponential distribution. The concept of an equivalent velocity trap is introduced in the present model; moreover, reformation of ballistic diffusive system is also considered as a marginal situation but does not exhibit the collapsed state of diffusion.

Effects of four different cooking methods on some quality characteristics of low fat Inegol meatball enriched with flaxseed flour.

PubMed

Turp, Gulen Yildiz

2016-11-01

The present study is concerned with the effects of four different cooking methods (grill, oven, pan and ohmic cooking) on physicochemical parameters (cooking yield moisture retention, fat retention, color, texture), fatty acid composition and sensory characteristics of low fat Turkish traditional Inegol meatball. Flaxseed flour was used as a fat substitute in the production of meatballs. Meatball proximate composition was affected by the cooking methods mainly as a consequence of the weight losses. The highest cooking yield was found in samples cooked in the oven. Flaxseed flour contains high amount of α-linolenic acid and ohmic cooking seems to be the best cooking method in terms of retaining this fatty acid in meatballs enriched with flaxseed flour. However ohmic cooked meatball samples had a brighter surface color and harder texture in comparison with meatball samples cooked via traditional methods. There was no significant difference between the sensory evaluation scores of meatballs. Copyright © 2016 Elsevier Ltd. All rights reserved.

Self-aligned Ni-P ohmic contact scheme for silicon solar cells by electroless deposition

NASA Astrophysics Data System (ADS)

Lee, Eun Kyung; Lim, Dong Chan; Lee, Kyu Hwan; Lim, Jae-Hong

2012-08-01

We report a Ni-P metallization scheme for low resistance ohmic contacts to n-type Si for silicon solar cells. As-deposited Ni-P contacts to n-type Si showed a specific contact resistance of 6.42 × 10-4 Ω·cm2. The specific contact resistance decreased with increasing thermal annealing temperature. When the Ni-P contact was annealed at 600°C for 30 min in ambient air, the specific contact resistance was greatly decreased, to 6.37 × 10-5Ω·cm2. The improved ohmic property was attributed to the decrease in the work function due to the formation of Ni-silicides from Ni in-diffusion during the thermal annealing process. Effects of the annealing process on the electrical and crystal properties of the contacts were investigated by means of various resistivity measurements (circular transmission line method (c-TLM), 4-point probe), glancing angle x-ray diffraction (GAXRD), and x-ray photoelectron spectroscopy (XPS).

Observation of quasi-coherent edge fluctuations in Ohmic plasmas on National Spherical Torus Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Santanu; Diallo, A.; Zweben, S. J.

A quasi-coherent edge density mode with frequency f{sub mode} ∼ 40 kHz is observed in Ohmic plasmas in National Spherical Torus Experiment using the gas puff imaging diagnostic. This mode is located predominantly just inside the separatrix, with a maximum fluctuation amplitude significantly higher than that of the broadband turbulence in the same frequency range. The quasi-coherent mode has a poloidal wavelength λ{sub pol} ∼ 16 cm and a poloidal phase velocity of V{sub pol} ∼ 4.9 ± 0.3 km s{sup −1} in the electron diamagnetic direction, which are similar to the characteristics expected from a linear drift-wave-like mode in the edge. This is the first observation of amore » quasi-coherent edge mode in an Ohmic diverted tokamak, and so may be useful for validating tokamak edge turbulence codes.« less

Quantum dynamics simulations in an ultraslow bath using hierarchy of stochastic Schrödinger equations

NASA Astrophysics Data System (ADS)

Ke, Yaling; Zhao, Yi

2018-04-01

The hierarchy of stochastic Schrödinger equation, previously developed under the unpolarised initial bath states, is extended in this paper for open quantum dynamics under polarised initial bath conditions. The method is proved to be a powerful tool in investigating quantum dynamics exposed to an ultraslow Ohmic bath, as in this case the hierarchical truncation level and the random sampling number can be kept at a relatively small extent. By systematically increasing the system-bath coupling strength, the symmetric Ohmic spin-boson dynamics is investigated at finite temperature, with a very small cut-off frequency. It is confirmed that the slow bath makes the system dynamics extremely sensitive to the initial bath conditions. The localisation tendency is stronger in the polarised initial bath conditions. Besides, the oscillatory coherent dynamics persists even when the system-bath coupling is very strong, in correspondence with what is found recently in the deep sub-Ohmic bath, where also the low-frequency modes dominate.

Temperature dependence of tris(2,2'-bipyridine) ruthenium (II) device characteristics

NASA Astrophysics Data System (ADS)

Slinker, Jason D.; Malliaras, George G.; Flores-Torres, Samuel; Abruña, Héctor D.; Chunwachirasiri, Withoon; Winokur, Michael J.

2004-04-01

We have investigated the temperature dependence of the current, radiance, and efficiency from electroluminescent devices based on [Ru(bpy)3]2+(PF6-)2, where bpy is 2,2'-bipyridine. We find that the current increases monotonically with temperature from 200 to 380 K, while the radiance reaches a maximum near room temperature. For temperatures greater than room temperature, an irreversible, current-induced degradation occurs with thermal cycling that diminishes both the radiance and the photoluminescence (PL) quantum yield, but does not affect the current. The temperature dependence of the external quantum efficiency is fully accounted for by the dependence of the PL quantum yield as measured from the emissive area of the device. This implies that the contacts remain ohmic throughout the temperature range investigated. The quenching of the PL with temperature was attributed to thermal activation to a nonradiative d-d transition. The temperature dependence of the current shows a complex behavior in which transport appears to be thermally activated, with distinct low-temperature and high-temperature regimes.

Goat milk free fatty acid characterization during conventional and ohmic heating pasteurization.

PubMed

Pereira, R N; Martins, R C; Vicente, A A

2008-08-01

The disruption of the milk fat globule membrane can lead to an excessive accumulation of free fatty acids in milk, which is frequently associated with the appearance of rancid flavors. Solid-phase microextraction and gas chromatography techniques have been shown to be useful tools in the quantification of individual free fatty acids in dairy products providing enough sensitivity to detect levels of rancidity in milk. Therefore, the aim of this study was to characterize the short-chain and medium-chain free fatty acid profile in i) raw untreated goat milk; ii) raw goat milk passing through pumps and heating units (plate-and-frame heat exchanger and ohmic heater); and iii) processed goat milk by conventional and ohmic pasteurization to determine the influence of each treatment in the final quality of the milk. Multivariate statistical analysis has shown that the treatments studied were not responsible for the variability found on free fatty acid contents. In particular, it was possible to conclude that ohmic pasteurization at 72 degrees C for 15 s did not promote an extended modification of free fatty acid contents in goat milk when compared with that of conventional pasteurization. Furthermore, principal component analysis showed that the capric acid can be used to discriminate goat's milk with different free fatty acid concentrations. Hierarchical cluster analysis showed evidence of the existence of correlations between contents of short and medium chain free fatty acids in goat milk.

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

NASA Astrophysics Data System (ADS)

Jyothi, I.; Reddy, V. Rajagopal

2010-10-01

A W/Ti/Au multilayer scheme has been fabricated for achieving thermally stable low-resistance ohmic contact to n-type GaN (4.0 × 10 18 cm -3). It is shown that the as-deposited W/Ti/Au contact exhibits near linear I- V behaviour. However, annealing at temperature below 800 °C the contacts exhibit non-linear behaviour. After annealing at a temperature in excess of 850 °C, the W/Ti/Au contact showed ohmic behaviour. The W/Ti/Au contact produced specific contact resistance as low as 6.7 × 10 -6 Ω cm 2 after annealing at 900 °C for 1 min in a N 2 ambient. It is noted that the specific contact resistance decreases with increase in annealing temperature. It is also noted that annealing the contacts at 900 °C for 30 min causes insignificant degradation of the electrical and thermal properties. It is further shown that the overall surface morphology of the W/Ti/Au stayed fairly smooth even after annealing at 900 °C. The W/Ti/Au ohmic contact showed good edge sharpness after annealing at 900 °C for 30 min. Based on the Auger electron spectroscopy and glancing angle X-ray diffraction results, possible explanation for the annealing dependence of the specific contact resistance of the W/Ti/Au contacts are described and discussed.

Solenoid-free plasma startup in NSTX using transient CHI

NASA Astrophysics Data System (ADS)

Raman, R.; Jarboe, T. R.; Mueller, D.; Nelson, B. A.; Bell, M. G.; Bell, R.; Gates, D.; Gerhardt, S.; Hosea, J.; Kaita, R.; Kugel, H.; LeBlanc, B.; Maingi, R.; Maqueda, R.; Menard, J.; Nagata, M.; Ono, M.; Paul, S.; Roquemore, L.; Sabbagh, S.; Soukhanovskii, V.; Taylor, G.

2009-06-01

Experiments in NSTX have now demonstrated the coupling of toroidal plasmas produced by the technique of coaxial helicity injection (CHI) to inductive sustainment and ramp-up of the toroidal plasma current. In these discharges, the central Ohmic transformer was used to apply an inductive loop voltage to discharges with a toroidal current of about 100 kA created by CHI. The coupled discharges have ramped up to >700 kA and transitioned into an H-mode demonstrating compatibility of this startup method with conventional operation. The electron temperature in the coupled discharges reached over 800 eV and the resulting plasma had low inductance, which is preferred for long-pulse high-performance discharges. These results from NSTX in combination with the previously obtained record 160 kA non-inductively generated startup currents in an ST or tokamak in NSTX demonstrate that CHI is a viable solenoid-free plasma startup method for future STs and tokamaks.

The effect of beam-driven return current instability on solar hard X-ray bursts

NASA Technical Reports Server (NTRS)

Cromwell, D.; Mcquillan, P.; Brown, J. C.

1986-01-01

The problem of electrostatic wave generation by a return current driven by a small area electron beam during solar hard X-ray bursts is discussed. The marginal stability method is used to solve numerically the electron and ion heating equations for a prescribed beam current evolution. When ion-acoustic waves are considered, the method appears satisfactory and, following an initial phase of Coulomb resistivity in which T sub e/T sub i rise, predicts a rapid heating of substantial plasma volumes by anomalous ohmic dissipation. This hot plasma emits so much thermal bremsstrahlung that, contrary to previous expectations, the unstable beam-plasma system actually emits more hard X-rays than does the beam in the purely collisional thick target regime relevant to larger injection areas. Inclusion of ion-cyclotron waves results in ion-acoustic wave onset at lower T sub e/T sub i and a marginal stability treatment yields unphysical results.

Some Aspects of Advanced Tokamak Modeling in DIII-D

NASA Astrophysics Data System (ADS)

St John, H. E.; Petty, C. C.; Murakami, M.; Kinsey, J. E.

2000-10-01

We extend previous work(M. Murakami, et al., General Atomics Report GA-A23310 (1999).) done on time dependent DIII-D advanced tokamak simulations by introducing theoretical confinement models rather than relying on power balance derived transport coefficients. We explore using NBCD and off axis ECCD together with a self-consistent aligned bootstrap current, driven by the internal transport barrier dynamics generated with the GLF23 confinement model, to shape the hollow current profile and to maintain MHD stable conditions. Our theoretical modeling approach uses measured DIII-D initial conditions to start off the simulations in a smooth consistent manner. This mitigates the troublesome long lived perturbations in the ohmic current profile that is normally caused by inconsistent initial data. To achieve this goal our simulation uses a sequence of time dependent eqdsks generated autonomously by the EFIT MHD equilibrium code in analyzing experimental data to supply the history for the simulation.

Origin of nonsaturating linear magnetoresistivity

NASA Astrophysics Data System (ADS)

Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.

2017-01-01

The observation of nonsaturating classical linear magnetoresistivity has been an enigmatic phenomenon in solid-state physics. We present a study of a two-dimensional ohmic conductor, including local Hall effect and a self-consistent consideration of the environment. An equivalent-circuit scheme delivers a simple and convincing argument why the magnetoresistivity is linear in strong magnetic field, provided that current and biasing electric field are misaligned by a nonlocal mechanism. A finite-element model of a two-dimensional conductor is suited to display the situations that create such deviating currents. Besides edge effects next to electrodes, charge carrier density fluctuations are efficiently generating this effect. However, mobility fluctuations that have frequently been related to linear magnetoresistivity are barely relevant. Despite its rare observation, linear magnetoresitivity is rather the rule than the exception in a regime of low charge carrier densities, misaligned current pathways and strong magnetic field.

Alternating currents and shear waves in viscous electronics

NASA Astrophysics Data System (ADS)

Semenyakin, M.; Falkovich, G.

2018-02-01

Strong interaction among charge carriers can make them move like viscous fluid. Here we explore alternating current (ac) effects in viscous electronics. In the Ohmic case, incompressible current distribution in a sample adjusts fast to a time-dependent voltage on the electrodes, while in the viscous case, momentum diffusion makes for retardation and for the possibility of propagating slow shear waves. We focus on specific geometries that showcase interesting aspects of such waves: current parallel to a one-dimensional defect and current applied across a long strip. We find that the phase velocity of the wave propagating along the strip respectively increases/decreases with the frequency for no-slip/no-stress boundary conditions. This is so because when the frequency or strip width goes to zero (alternatively, viscosity go to infinity), the wavelength of the current pattern tends to infinity in the no-stress case and to a finite value in a general case. We also show that for dc current across a strip with a no-stress boundary, there are only one pair of vortices, while there is an infinite vortex chain for all other types of boundary conditions.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Multilayer CrPtCr/NiAu ohmic contacts with p-type GaAs in heterojunction laser structures

NASA Astrophysics Data System (ADS)

Wójcik, I.; Stareev, G.; Barcz, A.; Domański, M.

1988-11-01

Multilayer CrPtCr/NiAu metallization was deposited by sputtering in a magnetron on the p-type side of GaAs in a pulsed laser heterostructure. Heat treatment at 490 °C for 3 min produced a reliable ohmic contact with a specific resistance of 10- 6-10- 5 Ω · cm2, depending on the substrate doping. Secondary-ion mass spectroscopy and Rutherford backscattering methods were used to study the mechanism of formation of a contact.

Ohmic resistance in a multi-anode MxCs

EPA Pesticide Factsheets

A-3txf_sequence summary.xksx: Abundance of contigs or unique sequences for each biofilm samples from anodes in the MEC reactorHodon Waterloo final_fasta_working.docx: Raw sequences with their identification numbersRNA S1_MEC.docx: Representative sequences with their ID number and taxonomyThis dataset is associated with the following publication:Santodomingo, J., H. Ryu, B. Dhar, and H. Lee. Ohmic resistance affects microbial community and electrochemical kinetics in a multi-anode microbial electrochemical cell. JOURNAL OF POWER SOURCES. Elsevier Science Ltd, New York, NY, USA, 331: 315-321, (2016).

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

NASA Astrophysics Data System (ADS)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Equilibrium dynamics of the sub-Ohmic spin-boson model under bias

NASA Astrophysics Data System (ADS)

Zheng, Da-Chuan; Tong, Ning-Hua

2017-06-01

Using the bosonic numerical renormalization group method, we studied the equilibrium dynamical correlation function C(ω) of the spin operator σ z for the biased sub-Ohmic spin-boson model. The small-ω behavior C(ω )\\propto {ω }s is found to be universal and independent of the bias ɛ and the coupling strength α (except at the quantum critical point α ={α }{{c}} and ɛ = 0). Our NRG data also show C(ω )\\propto {χ }2{ω }s for a wide range of parameters, including the biased strong coupling regime (\\varepsilon \

Effect of morphology on the non-ohmic conduction in ZnO nanostructures

NASA Astrophysics Data System (ADS)

Praveen, E.; Jayakumar, K.

2016-05-01

Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 tokamak

NASA Astrophysics Data System (ADS)

Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun

2014-05-01

A transient burst (ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

Enhanced bipolar resistive switching behavior in polar Cr-doped barium titanate thin films without electro-forming process

NASA Astrophysics Data System (ADS)

Thakre, Atul; Kumar, Ashok

2017-12-01

An enhanced, repeatable and robust resistive switching phenomenon was observed in Cr substituted BaTiO3 polar ferroelectric thin films; fabricated and deposited by the sol-gel approach and spin coating technique, respectively. An enhanced bistable bipolar resistive switching (BRS) phenomenon without electro-forming process, low switching voltage (˜ 2 V) and moderate retention characteristics of 104 s along with a high Roff/Ron resistance ratio ˜103 was achieved. The current conduction analysis showed that the space charge limited conduction (SCLC) and Schottky emission conduction dominate in the high voltage range, while thermally active charge carriers (ohmic) in the lower voltage range. The impedance spectroscopy study indicates the formation of current conducting path and rupturing of oxygen vacancies during SET and RESET process.

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts

NASA Astrophysics Data System (ADS)

Maslyanchuk, Olena L.; Solovan, Mykhailo M.; Maistruk, Eduard V.; Brus, Viktor V.; Maryanchuk, Pavlo D.; Gnatyuk, Volodymyr A.; Aoki, Toru

2018-01-01

The present paper analyzes the charge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Soap-film flow induced by electric fields in asymmetric frames

NASA Astrophysics Data System (ADS)

Mollaei, S.; Nasiri, M.; Soltanmohammadi, N.; Shirsavar, R.; Ramos, A.; Amjadi, A.

2018-04-01

Net fluid flow of soap films induced by (ac or dc) electric fields in asymmetric frames is presented. Previous experiments of controllable soap film flow required the simultaneous use of an electrical current passing through the film and an external electric field or the use of nonuniform ac electric fields. Here a single voltage difference generates both the electrical current going through the film and the electric field that actuates on the charge induced on the film. The film is set into global motion due to the broken symmetry that appears by the use of asymmetric frames. If symmetric frames are used, the film flow is not steady but time dependent and irregular. Finally, we study numerically these film flows by employing the model of charge induction in ohmic liquids.

Soap-film flow induced by electric fields in asymmetric frames.

PubMed

Mollaei, S; Nasiri, M; Soltanmohammadi, N; Shirsavar, R; Ramos, A; Amjadi, A

2018-04-01

Net fluid flow of soap films induced by (ac or dc) electric fields in asymmetric frames is presented. Previous experiments of controllable soap film flow required the simultaneous use of an electrical current passing through the film and an external electric field or the use of nonuniform ac electric fields. Here a single voltage difference generates both the electrical current going through the film and the electric field that actuates on the charge induced on the film. The film is set into global motion due to the broken symmetry that appears by the use of asymmetric frames. If symmetric frames are used, the film flow is not steady but time dependent and irregular. Finally, we study numerically these film flows by employing the model of charge induction in ohmic liquids.

Current-voltage characteristics influenced by the nanochannel diameter and surface charge density in a fluidic field-effect-transistor.

PubMed

Singh, Kunwar Pal; Guo, Chunlei

2017-06-21

The nanochannel diameter and surface charge density have a significant impact on current-voltage characteristics in a nanofluidic transistor. We have simulated the effect of the channel diameter and surface charge density on current-voltage characteristics of a fluidic nanochannel with positive surface charge on its walls and a gate electrode on its surface. Anion depletion/enrichment leads to a decrease/increase in ion current with gate potential. The ion current tends to increase linearly with gate potential for narrow channels at high surface charge densities and narrow channels are more effective to control the ion current at high surface charge densities. The current-voltage characteristics are highly nonlinear for wide channels at low surface charge densities and they show different regions of current change with gate potential. The ion current decreases with gate potential after attaining a peak value for wide channels at low values of surface charge densities. At low surface charge densities, the ion current can be controlled by a narrow range of gate potentials for wide channels. The current change with source drain voltage shows ohmic, limiting and overlimiting regions.

Final Report on Development of Optimized Field-Reversed Configuration Plasma Formation Techniques for Magnetized Target Fusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lynn, Alan

2013-11-01

The University of New Mexico (UNM) proposed a collaboration with Los Alamos National Laboratory (LANL) to develop and test methods for improved formation of field-reversed configuration (FRC) plasmas relevant to magnetized target fusion (MTF) energy research. MTF is an innovative approach for a relatively fast and cheap path to the production of fusion energy that utilizes magnetic confinement to assist in the compression of a hot plasma to thermonuclear conditions by an external driver. LANL is currently pursing demonstration of the MTF concept via compression of an FRC plasma by a metal liner z-pinch in conjunction with the Air Forcemore » Research Laboratory in Albuquerque, NM. A key physics issue for the FRC's ultimate success as an MTF target lies in the initial pre-ionization (PI) stage. The PI plasma sets the initial conditions from which the FRC is created. In particular, the PI formation process determines the amount of magnetic flux that can be trapped to form the FRC. A ringing theta pinch ionization (RTPI) technique, such as currently used by the FRX-L device at LANL, has the advantages of high ionization fraction, simplicity (since no additional coils are required), and does not require internal electrodes which can introduce impurities into the plasma. However RTPI has been shown to only trap 50% of the initial bias flux at best and imposes additional engineering constraints on the capacitor banks. The amount of trapped flux plays an important role in the FRC's final equilibrium, transport, and stability properties, and provides increased ohmic heating of the FRC through induced currents as the magnetic field decays. Increasing the trapped flux also provides the route to greatest potential gains in FRC lifetime, which is essential to provide enough time to translate and compress the FRC effectively. In conjunction with LANL we initially planned to develop and test a microwave break- down system to improve the initial PI plasma formation. The UNM team would design the microwave optics and oversee the fabrication and assembly of all components and assist with integration into the FRX-L machine control system. LANL would provide a preexisting 65 kW X-band microwave source and some associated waveguide hardware. Once constructed and installed, UNM would take the lead in operating the microwave breakdown system and conducting studies to optimize its use in FRC PI formation in close cooperation with the needs of the LANL MTF team. In conjunction with our LANL collaborators, we decided after starting the project to switch from a microwave plasma breakdown approach to a plasma gun technology to use for enhanced plasma formation in the FRX-L field-reversed configuration experiment at LANL. Plasma guns would be able to provide significantly higher density plasma with greater control over its distribution in time and space within the experiment. This would allow greater control and ne-tuning of the PI plasma formed in the experiment. Multiple plasma guns would be employed to fill a Pyrex glass test chamber (built at UNM) with plasma which would then be characterized and optimized for the MTF effort.« less

Study of flow behavior in all-vanadium redox flow battery using spatially resolved voltage distribution

NASA Astrophysics Data System (ADS)

Bhattarai, Arjun; Wai, Nyunt; Schweiss, Rüdiger; Whitehead, Adam; Scherer, Günther G.; Ghimire, Purna C.; Nguyen, Tam D.; Hng, Huey Hoon

2017-08-01

Uniform flow distribution through the porous electrodes in a flow battery cell is very important for reducing Ohmic and mass transport polarization. A segmented cell approach can be used to obtain in-situ information on flow behaviour, through the local voltage or current mapping. Lateral flow of current within the thick felts in the flow battery can hamper the interpretation of the data. In this study, a new method of segmenting a conventional flow cell is introduced, which for the first time, splits up both the porous felt as well as the current collector. This dual segmentation results in higher resolution and distinct separation of voltages between flow inlet to outlet. To study the flow behavior for an undivided felt, monitoring the OCV is found to be a reliable method, instead of voltage or current mapping during charging and discharging. Our approach to segmentation is simple and applicable to any size of the cell.

Charge transport study in bis{2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2

NASA Astrophysics Data System (ADS)

Rai, Virendra Kumar; Srivastava, Ritu; Chauhan, Gayatri; Kumar, Arunandan; Kamalasanan, M. N.

2008-10-01

The nature of the electrical transport mechanism for carrier transport in pure bis {2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2] has been studied by current voltage measurements of samples at different thicknesses and at different temperatures. Hole-only devices show ohmic conduction at low voltages and space charge conduction at high voltages. The space charge conduction is clearly identifiable with a square law dependence of current on voltage as well as the scaling of current inversely with the cube of thickness. With a further increase in voltage, the current increases with a Vm dependence with m varying with temperature typical of trap limited conduction with an exponential distribution of trap states. From the square law region the effective charge carrier mobility of holes has been evaluated as 2.5 × 10-11 m2 V-1 s-1. Electron-only devices however show electrode limited conduction, which was found to obey the Scott Malliaras model of charge injection.

Electric Field and Current Transport Mechanisms in Schottky CdTe X-ray Detectors under Perturbing Optical Radiation

PubMed Central

Cola, Adriano; Farella, Isabella

2013-01-01

Schottky CdTe X-ray detectors exhibit excellent spectroscopic performance but suffer from instabilities. Hence it is of extreme relevance to investigate their electrical properties. A systematic study of the electric field distribution and the current flowing in such detectors under optical perturbations is presented here. The detector response is explored by varying experimental parameters, such as voltage, temperature, and radiation wavelength. The strongest perturbation is observed under 850 nm irradiation, bulk carrier recombination becoming effective there. Cathode and anode irradiations evidence the crucial role of the contacts, the cathode being Ohmic and the anode blocking. In particular, under irradiation of the cathode, charge injection occurs and peculiar kinks, typical of trap filling, are observed both in the current-voltage characteristic and during transients. The simultaneous access to the electric field and the current highlights the correlation between free and fixed charges, and unveils carrier transport/collection mechanisms otherwise hidden. PMID:23881140

Current Voltage Characteristics and Excess Noise at the Trap Filling Transition in Polyacenes

NASA Astrophysics Data System (ADS)

Pousset, Jeremy; Alfinito, Eleonora; Carbone, Anna; Pennetta, Cecilia; Reggiani, Lino

Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current-voltage (I-V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap-free space-charge-limited current) behaviors. Similarly, excess noise measurements at a given frequency and increasing voltages evidence a sharp peak of the relative spectral density of the current noise in concomitance with the strong superquadratic I-V characteristics. Here, we discuss the physical interpretation of these experiments in terms of an essential contribution from field-assisted trapping-detrapping processes of injected carriers. To this purpose, the fraction of filled traps determined by the I-V characteristics is used to evaluate the excess noise in the trap-filled transition (TFT) regime. We have found an excellent agreement between the predictions of our model and existing experimental results in tetracene and pentacene thin films of different length in the range 0.65÷35μm.

Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips.

PubMed

Han, Dan; Ma, Shufang; Jia, Zhigang; Liu, Peizhi; Jia, Wei; Shang, Lin; Zhai, Guangmei; Xu, Bingshe

2018-04-10

InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.

A permeation theory for single-file ion channels: one- and two-step models.

PubMed

Nelson, Peter Hugo

2011-04-28

How many steps are required to model permeation through ion channels? This question is investigated by comparing one- and two-step models of permeation with experiment and MD simulation for the first time. In recent MD simulations, the observed permeation mechanism was identified as resembling a Hodgkin and Keynes knock-on mechanism with one voltage-dependent rate-determining step [Jensen et al., PNAS 107, 5833 (2010)]. These previously published simulation data are fitted to a one-step knock-on model that successfully explains the highly non-Ohmic current-voltage curve observed in the simulation. However, these predictions (and the simulations upon which they are based) are not representative of real channel behavior, which is typically Ohmic at low voltages. A two-step association/dissociation (A/D) model is then compared with experiment for the first time. This two-parameter model is shown to be remarkably consistent with previously published permeation experiments through the MaxiK potassium channel over a wide range of concentrations and positive voltages. The A/D model also provides a first-order explanation of permeation through the Shaker potassium channel, but it does not explain the asymmetry observed experimentally. To address this, a new asymmetric variant of the A/D model is developed using the present theoretical framework. It includes a third parameter that represents the value of the "permeation coordinate" (fractional electric potential energy) corresponding to the triply occupied state n of the channel. This asymmetric A/D model is fitted to published permeation data through the Shaker potassium channel at physiological concentrations, and it successfully predicts qualitative changes in the negative current-voltage data (including a transition to super-Ohmic behavior) based solely on a fit to positive-voltage data (that appear linear). The A/D model appears to be qualitatively consistent with a large group of published MD simulations, but no quantitative comparison has yet been made. The A/D model makes a network of predictions for how the elementary steps and the channel occupancy vary with both concentration and voltage. In addition, the proposed theoretical framework suggests a new way of plotting the energetics of the simulated system using a one-dimensional permeation coordinate that uses electric potential energy as a metric for the net fractional progress through the permeation mechanism. This approach has the potential to provide a quantitative connection between atomistic simulations and permeation experiments for the first time.

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

NASA Astrophysics Data System (ADS)

Bilbro, Griff L.; Hou, Danqiong; Yin, Hong; Trew, Robert J.

2009-02-01

We have quantitatively modeled the conduction current and charge storage of an HFET in terms its physical dimensions and material properties. For DC or small-signal RF operation, no adjustable parameters are necessary to predict the terminal characteristics of the device. Linear performance measures such as small-signal gain and input admittance can be predicted directly from the geometric structure and material properties assumed for the device design. We have validated our model at low-frequency against experimental I-V measurements and against two-dimensional device simulations. We discuss our recent extension of our model to include a larger class of electron velocity-field curves. We also discuss the recent reformulation of our model to facilitate its implementation in commercial large-signal high-frequency circuit simulators. Large signal RF operation is more complex. First, the highest CW microwave power is fundamentally bounded by a brief, reversible channel breakdown in each RF cycle. Second, the highest experimental measurements of efficiency, power, or linearity always require harmonic load pull and possibly also harmonic source pull. Presently, our model accounts for these facts with an adjustable breakdown voltage and with adjustable load impedances and source impedances for the fundamental frequency and its harmonics. This has allowed us to validate our model for large signal RF conditions by simultaneously fitting experimental measurements of output power, gain, and power added efficiency of real devices. We show that the resulting model can be used to compare alternative device designs in terms of their large signal performance, such as their output power at 1dB gain compression or their third order intercept points. In addition, the model provides insight into new device physics features enabled by the unprecedented current and voltage levels of AlGaN/GaN HFETs, including non-ohmic resistance in the source access regions and partial depletion of the 2DEG in the drain access region.

Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

NASA Astrophysics Data System (ADS)

Okino, Hiroyuki; Kameshiro, Norifumi; Konishi, Kumiko; Shima, Akio; Yamada, Ren-ichi

2017-12-01

Nickel (Ni), titanium (Ti), and molybdenum (Mo) 4H-silicon carbide Schottky-barrier diodes (SiC SBDs) were fabricated and used to investigate the relation between forward and reverse currents. Temperature dependence of reverse current follows a theory that includes tunneling in regard to thermionic emission, namely, temperature dependence is weak at low temperature but strong at high temperatures. On the other hand, the reverse currents of the Ni and Mo SBDs are higher than their respective currents calculated from their Schottky barrier heights (SBHs), whereas the reverse current of the Ti SBD agrees well with that calculated from its SBH. The cause of the high reverse currents was investigated from the viewpoints of low barrier patch, Gaussian distribution of barrier height (GD), thin surface barrier, and electron effective mass. The high reverse current of the Ni and Mo SBDs can be explained not in terms of a low-barrier patch, GD, or thin surface barrier but in terms of small effective masses. Investigation of crystal structures at the Schottky interface revealed a large lattice mismatch between the metals (Ni, Ti, or Mo) and SiC for the Ni and Mo SBDs. The small effective mass is possibly attributed to the large lattice mismatch, which might generate transition layers at the Schottky interface. It is concluded from these results that the lattice constant as well as the work function is an important factor in selecting the metal species as the Schottky metal for wide band-gap SBDs, for which tunneling current dominates reverse current.

Paleoclassical transport explains electron transport barriers in RTP and TEXTOR

NASA Astrophysics Data System (ADS)

Hogeweij, G. M. D.; Callen, J. D.; RTP Team; TEXTOR Team

2008-06-01

The recently developed paleoclassical transport model sets the minimum level of electron thermal transport in a tokamak. This transport level has proven to be in good agreement with experimental observations in many cases when fluctuation-induced anomalous transport is small, i.e. in (near-)ohmic plasmas in small to medium size tokamaks, inside internal transport barriers (ITBs) or edge transport barriers (H-mode pedestal). In this paper predictions of the paleoclassical transport model are compared in detail with data from such kinds of discharges: ohmic discharges from the RTP tokamak, EC heated RTP discharges featuring both dynamic and shot-to-shot scans of the ECH power deposition radius and off-axis EC heated discharges from the TEXTOR tokamak. For ohmically heated RTP discharges the Te profiles predicted by the paleoclassical model are in reasonable agreement with the experimental observations, and various parametric dependences are captured satisfactorily. The electron thermal ITBs observed in steady state EC heated RTP discharges and transiently after switch-off of off-axis ECH in TEXTOR are predicted very well by the paleoclassical model.

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

NASA Astrophysics Data System (ADS)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

Effect of clamping pressure on ohmic resistance and compression of gas diffusion layers for polymer electrolyte fuel cells

NASA Astrophysics Data System (ADS)

Mason, Thomas J.; Millichamp, Jason; Neville, Tobias P.; El-kharouf, Ahmad; Pollet, Bruno G.; Brett, Daniel J. L.

2012-12-01

This paper describes the use of an in situ analytical technique based on simultaneous displacement and resistance measurement of gas diffusion layers (GDLs) used in polymer electrolyte fuel cells (PEFCs), when exposed to varying compaction pressure. In terms of the losses within fuel cells, the ohmic loss makes up a significant portion. Of this loss, the contact resistance between the GDL and the bipolar plate (BPP) is an important constituent. By analysing the change in thickness and ohmic resistance of GDLs under compression, important mechanical and electrical properties are obtained. Derived parameters such as the 'displacement factor' are used to characterise a representative range of commercial GDLs. Increasing compaction pressure leads to a non-linear decrease in resistance for all GDLs. For Toray paper, compaction becomes more irreversible with pressure with no elastic region observed. Different GDLs have different intrinsic resistance; however, all GDLs of the same class share a common compaction profile (change in resistance with pressure). Cyclic compression of Toray GDL leads to progressive improvement in resistance and reduction in thickness that stabilises after ∼10 cycles.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

NASA Astrophysics Data System (ADS)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

Plasma Confinement in the UCLA Electric Tokamak.

NASA Astrophysics Data System (ADS)

Taylor, Robert J.

2001-10-01

The main goal of the newly constructed large Electric Tokamak (R = 5 m, a = 1 m, BT < 0.25 T) is to access an omnigeneous, unity beta(S.C. Cowley, P.K. Kaw, R.S. Kelly, R.M. Kulsrud, Phys. fluids B 3 (1991) 2066.) plasma regime. The design goal was to achieve good confinement at low magnetic fields, consistent with the high beta goal. To keep the program cost down, we adopted the use of ICRF as the primary heating source. Consequently, antenna surfaces covering 1/2 of the surface of the tokamak has been prepared for heating and current drive. Very clean hydrogenic plasmas have been achieved with loop voltage below 0.7 volt and densities 3 times above the Murakami limit, n(0) > 8 x 10^12 cm-3 when there is no MHD activity. The electron temperature, derived from the plasma conductivity is > 250 eV with a central electron energy confinement time > 350 msec in ohmic conditions. The sawteeth period is 50 msec. Edge plasma rotation is induced by plasma biasing via electron injection in an analogous manner to that seen in CCT(R.J. Taylor, M.L. Brown, B.D. Fried, H. Grote, J.R. Liberati, G.J. Morales, P. Pribyl, D. Darrow, and M. Ono. Phys. Rev Lett. 63 2365 1989.) and the neoclassical bifurcation is close to that described by Shaing et al(K.C. Shaing and E.C. Crume, Phys. Rev. Lett. 63 2369 (1989).). In the ohmic phase the confinement tends to be MHD limited. The ICRF heating eliminates the MHD disturbances. Under second harmonic heating conditions, we observe an internal confinement peaking characterized by doubling of the core density and a corresponding increase in the central electron temperature. Charge exchange data, Doppler data in visible H-alpha light, and EC radiation all indicate that ICRF heating works much better than expected. The major effort is focused on increasing the power input and controlling the resulting equilibrium. This task appears to be easy since our current pulses are approaching the 3 second mark without RF heating or current drive. Our initial experience with current profile control, needed for high beta plasma equilibrium, will be also discussed.

Au-free ohmic Ti/Al/TiN contacts to UID n-GaN fabricated by sputter deposition

NASA Astrophysics Data System (ADS)

Garbe, V.; Weise, J.; Motylenko, M.; Münchgesang, W.; Schmid, A.; Rafaja, D.; Abendroth, B.; Meyer, D. C.

2017-02-01

The fabrication and characterization of an Au-free Ti/Al/TiN (20/100/100 nm) contact stack to unintentionally doped n-GaN with TiN serving as the diffusion barrier is presented. Sputter deposition and lift-off in combination with post deposition annealing at 850 °C are used for contact formation. After annealing, contact shows ohmic behavior to n-GaN and a specific contact resistivity of 1.60 × 10-3 Ω cm2. To understand the contact formation on the microscopic scale, the contact was characterized by current-voltage measurements, linear transmission line method, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show the formation of Ti-N bonds at the GaN/Ti interface in the as-deposited stack. Annealing leads to diffusion of Ti, Al, Ga, and N, and the remaining metallic Ti is fully consumed by the formation of the intermetallic tetragonal Al3Ti phase. Native oxide from the GaN surface is trapped during annealing and accumulated in the Al interlayer. The TiN capping layer, however, was chemically stable during annealing. It prevented oxidation of the Ti/Al contact bilayer successfully and thus proved to be a well suitable diffusion barrier with ideal compatibility to the Ti/Al contact metallization.

Fabrication of through-silicon via arrays by photo-assisted electrochemical etching and supercritical electroplating

NASA Astrophysics Data System (ADS)

Chuang, Ho-Chiao; Yang, Hsi-Min; Wu, Cheng-Xiang; Sanchez, Jorge; Shyu, Jenq-Huey

2017-01-01

This paper aims to fabricate high aspect ratio through silicon via (TSV) by photo-assisted electrochemical etching (PAECE) and supercritical CO2 copper electroplating. A blind-holed silicon array was first fabricated by PAECE. By studying the etching parameters, including hydrofluoric acid concentration, etchant temperature, stirring speed, tetrabutylammonium perchlorate (TBAP) content, and Ohmic contact thickness, an array of pores with a 1∶45 aspect ratio (height=250 μm and diameter=5.5 μm) was obtained successfully. Moreover, TBAP and Kodak Photo-Flo (PF) solution were added into the etchant to acquire smooth sidewalls for the first time. TBAP was added for the first time to serve as an antistatic agent in deionized water-based etchant to prevent side-branch etching, and PF was used to degasify hydrogen bubbles in the etchant. The effect of gold thickness over Ohmic contact was investigated. Randomized etching was observed with an Au thickness of 200 Å, but it can be improved by increasing the etching voltage. The silicon mold of through-holes was filled with metal using supercritical CO2 copper electroplating, which features high diffusivity, permeability, and density. The TSV structure (aspect ratio=1∶35) was obtained at a supercritical pressure of 2000 psi, temperature of 50°C, and current density of 30 mA/cm2 in 2.5 h.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Enhanced Control for Local Helicity Injection on the Pegasus ST

NASA Astrophysics Data System (ADS)

Pierren, C.; Bongard, M. W.; Fonck, R. J.; Lewicki, B. T.; Perry, J. M.

2017-10-01

Local helicity injection (LHI) experiments on Pegasus rely upon programmable control of a 250 MVA modular power supply system that drives the electromagnets and helicity injection systems. Precise control of the central solenoid is critical to experimental campaigns that test the LHI Taylor relaxation limit and the coupling efficiency of LHI-produced plasmas to Ohmic current drive. Enhancement and expansion of the present control system is underway using field programmable gate array (FPGA) technology for digital logic and control, coupled to new 10 MHz optical-to-digital transceivers for semiconductor level device communication. The system accepts optical command signals from existing analog feedback controllers, transmits them to multiple devices in parallel H-bridges, and aggregates their status signals for fault detection. Present device-level multiplexing/de-multiplexing and protection logic is extended to include bridge-level protections with the FPGA. An input command filter protects against erroneous and/or spurious noise generated commands that could otherwise cause device failures. Fault registration and response times with the FPGA system are 25 ns. Initial system testing indicates an increased immunity to power supply induced noise, enabling plasma operations at higher working capacitor bank voltage. This can increase the applied helicity injection drive voltage, enable longer pulse lengths and improve Ohmic loop voltage control. Work supported by US DOE Grant DE-FG02-96ER54375.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

NASA Astrophysics Data System (ADS)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

Nonlinear interaction of strong microwave beam with the ionosphere MINIX rocket experiment

NASA Astrophysics Data System (ADS)

Kaya, N.; Matsumoto, H.; Miyatake, S.; Kimura, I.; Nagatomo, M.

A rocket-borne experiment called 'MINIX' was carried out to investigate the nonlinear interaction of a strong microwave energy beam with the ionosphere. The MINIX stands for Microwave-Ionosphere Nonlinear Interaction eXperiment and was carried out on August 29, 1983. The objective of the MINIX is to study possible impacts of the SPS microwave energy beam on the ionosphere, such as the ohmic heating and plasma wave excitation. The experiment showed that the microwave with f = 2.45 GHz nonlinearly excites various electrostatic plasma waves, though no ohmic heating effects were detected.

Role of Reynolds Stress-Induced Poloidal Flow in Triggering the Transition to Improved Ohmic Confinement on the HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Xu, Y. H.; Yu, C. X.; Luo, J. R.; Mao, J. S.; Liu, B. H.; Li, J. G.; Wan, B. N.; Wan, Y. X.

2000-04-01

Time and space resolved measurements of electrostatic Reynolds stress, radial electric field Er, and plasma rotations have been performed across the transition to improved Ohmic confinement in the Hefei Tokamak-6M (HT-6M). The first experimental evidence of the correlation between the enhanced Reynolds stress gradient and the poloidal flow acceleration in the edge plasma is presented. The results indicate that the turbulence-induced Reynolds stress might be the dominant mechanism to create the sheared poloidal flow and Er, which may further trigger the transition.

Role of reynolds stress-induced poloidal flow in triggering the transition to improved ohmic confinement on the HT-6M tokamak

PubMed

Xu; Yu; Luo; Mao; Liu; Li; Wan; Wan

2000-04-24

Time and space resolved measurements of electrostatic Reynolds stress, radial electric field E(r), and plasma rotations have been performed across the transition to improved Ohmic confinement in the Hefei Tokamak-6M (HT-6M). The first experimental evidence of the correlation between the enhanced Reynolds stress gradient and the poloidal flow acceleration in the edge plasma is presented. The results indicate that the turbulence-induced Reynolds stress might be the dominant mechanism to create the sheared poloidal flow and E(r), which may further trigger the transition.

A highly manufacturable 0.2 {mu}m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Havasy, C.K.; Quach, T.K.; Bozada, C.A.

1995-12-31

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 {mu}m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

Low resistance contacts for shallow junction semiconductors

NASA Technical Reports Server (NTRS)

Fatemi, Navid S. (Inventor); Weizer, Victor G. (Inventor)

1994-01-01

A method of enhancing the specific contact resistivity in InP semiconductor devices and improved devices produced thereby are disclosed. Low resistivity values are obtained by using gold ohmic contacts that contain small amounts of gallium or indium and by depositing a thin gold phosphide interlayer between the surface of the InP device and the ohmic contact. When both the thin interlayer and the gold-gallium or gold-indium contact metallizations are used, ultra low specific contact resistivities are achieved. Thermal stability with good contact resistivity is achieved by depositing a layer of refractory metal over the gold phosphide interlayer.

Effect of pentacene/Ag anode buffer and UV-ozone treatment on durability of small-molecule organic solar cells

NASA Astrophysics Data System (ADS)

Inagaki, S.; Sueoka, S.; Harafuji, K.

2017-06-01

Three surface modifications of indium tin oxide (ITO) are experimentally investigated to improve the performance of small-molecule organic solar cells (OSCs) with an ITO/anode buffer layer (ABL)/copper phthalocyanine (CuPc)/fullerene/bathocuproine/Ag structure. An ultrathin Ag ABL and ultraviolet (UV)-ozone treatment of ITO independently improve the durability of OSCs against illumination stress. The thin pentacene ABL provides good ohmic contact between the ITO and the CuPc layer, thereby producing a large short-circuit current. The combined use of the abovementioned three modifications collectively achieves both better initial performance and durability against illumination stress.

Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

NASA Astrophysics Data System (ADS)

Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

2018-05-01

Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

Tape Casting of High-Performance Low-Temperature Solid Oxide Cells with Thin La0.8Sr0.2Ga0.8Mg0.2O3-δ Electrolytes and Impregnated Nano Anodes.

PubMed

Gao, Zhan; Wang, Hongqian; Miller, Elizabeth; Liu, Qinyuan; Senn, Daniel; Barnett, Scott

2017-03-01

Low-temperature solid oxide cells (LT-SOCs), operating at 400 to 650 °C, have great potential for commercialization since they can provide lower cost and improved long-term durability. Low operating temperature can also enable high round-trip efficiency of SOCs as reversible energy storage devices. This paper describes Sr 0.8 La 0.2 TiO 3-α (SLT) anode supported LT-SOC with thin La 0.8 Sr 0.2 Ga 0.8 Mg 0.2 O 3-δ (LSGM) electrolyte made by tape casting, with screen printed La 0.6 Sr 0.4 Fe 0.8 Co 0.2 O 3-δ (LSCF) cathode and impregnated Ni anode. Optimization of the anode functional layers is described; the best anodes had 68 vol % LSGM and 12.3 vol % Ni and yielded maximum power density of 1.6 Wcm -2 with a cell area specific resistance (ASR) of 0.21 Ωcm 2 at 650 °C. Most of the cell ASR was associated with the cathode. Reversible electrolysis and fuel cell operation yielded similar characteristics with both 50% H 2 -50% H 2 O and syngas fuel. Life testing over 500 h showed that the cathode impedance stabilized after an initial break-in period; the ohmic and anode resistances, though relatively small, increased slightly with time.

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2017-04-01

In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.

Ion diffusion may introduce spurious current sources in current-source density (CSD) analysis.

PubMed

Halnes, Geir; Mäki-Marttunen, Tuomo; Pettersen, Klas H; Andreassen, Ole A; Einevoll, Gaute T

2017-07-01

Current-source density (CSD) analysis is a well-established method for analyzing recorded local field potentials (LFPs), that is, the low-frequency part of extracellular potentials. Standard CSD theory is based on the assumption that all extracellular currents are purely ohmic, and thus neglects the possible impact from ionic diffusion on recorded potentials. However, it has previously been shown that in physiological conditions with large ion-concentration gradients, diffusive currents can evoke slow shifts in extracellular potentials. Using computer simulations, we here show that diffusion-evoked potential shifts can introduce errors in standard CSD analysis, and can lead to prediction of spurious current sources. Further, we here show that the diffusion-evoked prediction errors can be removed by using an improved CSD estimator which accounts for concentration-dependent effects. NEW & NOTEWORTHY Standard CSD analysis does not account for ionic diffusion. Using biophysically realistic computer simulations, we show that unaccounted-for diffusive currents can lead to the prediction of spurious current sources. This finding may be of strong interest for in vivo electrophysiologists doing extracellular recordings in general, and CSD analysis in particular. Copyright © 2017 the American Physiological Society.

A Single-Use Paper-Shaped Microbial Fuel Cell for Rapid Aqueous Biosensing.

PubMed

Zuo, Kuichang; Liu, Han; Zhang, Qiaoying; Liang, Peng; Huang, Xia; Vecitis, Chad D

2015-06-22

The traditional chamber-based microbial fuel cell (MFC) often has the disadvantages of high ohmic resistance, large volume requirements, and delayed start-up. In this study, paper-shaped MFCs utilizing a porous carbon anode, a solid Ag2 O-coated carbon cathode, and a micrometer-thin porous polyvinylidene fluoride (PVDF) separator are investigated to address the classical MFC issues. The Ag2 O-coated cathode has a low overpotential of 0.06 V at a reducing current of 1 mA compared to a Pt-air cathode. Rapid inoculation by filtration results in an instantaneous power density of 92 mW m(-2) with an internal resistance of 162 Ω. Integrated current over the first 30 min of operation has a linear relation with microbial concentration. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Applicability of tungsten/EUROFER blanket module for the DEMO first wall

NASA Astrophysics Data System (ADS)

Igitkhanov, Yu.; Bazylev, B.; Landman, I.; Boccaccini, L.

2013-07-01

In this paper we analyse a sandwich-type blanket configuration of W/EUROFER for DEMO first wall under steady-state normal operation and off-normal conditions, such as vertical displacements and runaway electrons. The heat deposition and consequent erosion of the tungsten armour is modelled under condition of helium cooling of the first wall blanket module and by taking into account the conversion of the magnetic energy stored in the runaway electron current into heat through the ohmic dissipation of the return current induced in the metallic armour structure. It is shown that under steady-state DEMO operation the first wall sandwich type module will tolerate heat loads up to ˜14 MW/m2. It will also sustain the off-normal events, apart from the hot vertical displacement events, which will melt the tungsten armour surface.

Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

NASA Astrophysics Data System (ADS)

Asada, M.; Suzuki, S.; Fukuma, T.

2017-11-01

The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz) oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC) as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

H-Mode Behavior Induced by Modulated Toroidal Current on HT-7 and HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Mao, J. S.; Luo, J. R.; Xu, Y. H.; Zhao, J. Y.; Zhang, X. M.; Li, J. G.; Zhang, X. M.; Gao, X.; Li, Y. D.; Jie, Y. X.; Wu, Z. W.; Hu, L. Q.; Liu, S. X.; Zhang, X. D.; Bao, Y.; Yang, K.; Wang, G. X.; Chen, L.; Shi, Y. J.; Qin, P. J.; Gu, X. M.; Cui, N. Z.; Fan, H. Y.; Chen, Y. F.; Xia, C. Y.; Ruan, H. L.; Tong, X. D.; Phillips, P. E.

2001-10-01

An improved Ohmic confinement phase (similar to H-mode) has been observed during Modulating Toroidal Current on the Hefei Tokamak-6M (HT-6M) and Hefei super-conducting Tokamak-7 (HT-7). This improved plasma confinement phase is characterized by: (a) an increase in ne and T_e(0); (b) reduced H_α radiation from the edge; (c) steeper density and temperature profiles at the edge; (d) a more negative radial electric field inside the limiter; (e) a deeper electrostatic potential well at the edge; (f) reduced magnetic fluctuations at the edge; (g) MHD suppressing; (h) and by an increase in global energy confinement time, τ _e, by 27%-45%. The well-like structure of the radial electric field E_r, appears at an L-H like transition.

Stationary multifaceted asymmetric radiation from the edge and improved confinement mode in a superconducting tokamak.

PubMed

Gao, X; Xie, J K; Wan, Y X; Ushigusa, K; Wan, B N; Zhang, S Y; Li, J; Kuang, G L

2002-01-01

Stationary multifaceted asymmetric radiation from the edge (MARFE) is studied by gas-puffing feedback control according to an empirical MARFE critical density ( approximately 1.8 x 10(13) cm(-3)) in the HT-7 Ohmic discharges (where the plasma current I(p) is about 170 kA, loop voltage V(loop)=2-3 V, toroidal field B(T)=1.9 T, and Z(eff)=3-4). It is observed that an improved confinement mode characterized by D(alpha) line emissions drops and the line-averaged density increase is triggered in the stationary MARFE discharges. The mode is not a symmetric "detachment" state, because the quasi-steady-state poloidally asymmetric radiation (e.g., C III line emissions) still exists. This phenomenon has not been predicted by the current MARFE theory.

Anomalous normal-state magnetoresistance and vortex-glass transition in superconducting single crystal YNi(2)B(2)C

NASA Astrophysics Data System (ADS)

Chu, Rambis Kam-Hong

1998-10-01

We have investigated the normal-state magnetoresistance (MR) and nonlinear voltage-current (I-V) behavior on the newly discovered superconducting rare-earth nickel borocarbide YNi2B2C. By contrast to previous samples used in various experiments, our specimens were synthesized using the Floating-Zone Technique (FZT). This method produces high-crystalline quality samples and minimizes the number of defects. Measurements were taken on temperature and field dependence of the resistivity of YNi2B2C between T c+1 and T c+145 K in magnetic fields up to 8 T. The in-plane magnetoresistance (MR), Δrho(H,/ T) gradually reverses the sign from negative to positive as the temperature decreases. A pronounced crossover is observed at T=80 K with H=4 T. Within our field range, the salient sign-reversal and temperature-dependence of MR characterize a spin- fluctuation temperature (T sf~80 K). Below T sf, the spins fluctuate rapidly compared with their thermal motion and the sample appears to be nonmagnetic, and it is the topology of the Fermi surface yields the positive Δrho. However, the thermal fluctuations are rapid above T sf so that the local spin-polarization lives long enough to reveal the short-range parallel moments and the scattering events are diminished, Δrho is therefore negative. Despite the fact that YNi2B2C is widely considered nonmagnetic, our observation implies that Ni 3d electrons are not totally quenched as it was thought, and they are both spatially and temporally correlated. Our results are in quantitative agreement with the MR dependence upon temperature and applied field. Non-ohmic voltage-current (I-V) isotherms were also measured in a-oriented samples, and the mixed state of YNi2B2C was found to be similar to that of high-T c cuprates, possibly due to the relatively large thermal fluctuations compared with conventional type-II superconductors. Universal critical exponents, v and z were obtained from the critical scaling analysis. Our results are close to the previous I-V measurements in c-oriented specimens. These implied that YNi2B2C is isotropic at least within the context of vortex dynamics. Furthermore, the angular dependent I-V measurements indicated that there is no evidence of 3-d columnar vortices, which are anticipated from the Bose-glass model. Instead, the vortices behave like 2-d wandering pancakes with a very weak interlayer coupling. Our results are consistent with the vortex- glass model.

Quasistationary magnetic field generation with a laser-driven capacitor-coil assembly.

PubMed

Tikhonchuk, V T; Bailly-Grandvaux, M; Santos, J J; Poyé, A

2017-08-01

Recent experiments are showing possibilities to generate strong magnetic fields on the excess of 500 T with high-energy nanosecond laser pulses in a compact setup of a capacitor connected to a single turn coil. Hot electrons ejected from the capacitor plate (cathode) are collected at the other plate (anode), thus providing the source of a current in the coil. However, the physical processes leading to generation of currents exceeding hundreds of kiloamperes in such a laser-driven diode are not sufficiently understood. Here we present a critical analysis of previous results and propose a self-consistent model for the high current generation in a laser-driven capacitor-coil assembly. It accounts for three major effects controlling the diode current: the space charge neutralization, the plasma magnetization between the capacitor plates, and the Ohmic heating of the external circuit-the coil-shaped connecting wire. The model provides the conditions necessary for transporting strongly super-Alfvenic currents through the diode on the time scale of a few nanoseconds. The model validity is confirmed by a comparison with the available experimental data.

Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure

NASA Astrophysics Data System (ADS)

Liu, Lilin; Ling, Minjie; Yang, Jianfu; Xiong, Wang; Jia, Weiqing; Wang, Gang

2012-05-01

With this work, we demonstrate a three-stage degradation behavior of GaN based LED chips under current/thermal co-stressing. The three stages in sequence are the initial improvement stage, the platform stage, and the rapid degradation stage, indicating that current/thermal co-stressing activates positive effects and negative ones simultaneously, and the dominant degradation mechanisms evolve with aging time. Degradation mechanisms are discussed. Electric current stress has dual characters: damaging the active layers by generating defects and at the same time improving the p-type conductivity by activating the Mg-dopant. High temperature stresses will promote the effects from electric current stresses. The activation of the Mg-dopant will saturate, whereas the generation of defects is carried on in a progressive way. Other mechanisms, such as deterioration of ohmic contacts, also operate. These mechanisms compete/cooperate with each other and evolve with aging time, resulting in the observed three-stage degradation behavior. There exist risks to predict the lifetime of LEDs by a model with a constant accelerated factor.

Plasma Formation and Evolution on Cu, Al, Ti, and Ni Surfaces Driven by a Mega-Ampere Current Pulse

NASA Astrophysics Data System (ADS)

Yates, Kevin C.

Metal alloy mm-diameter rods have been driven by a 1-MA, 100-ns current pulse from the Zebra z-pinch. The intense current produces megagauss surface magnetic fields that diffuse into the load, ohmically heating the metal until plasma forms. Because the radius is much thicker than the skin depth, the magnetic field reaches a much higher value than around a thin-wire load. With the "barbell" load design, plasma formation in the region of interest due to contact arcing or electron avalanche is avoided, allowing for the study of ohmically heated loads. Work presented here will show first evidence of a magnetic field threshold for plasma formation in copper 101, copper 145, titanium, and nickel, and compare with previous work done with aluminum. Copper alloys 101 and 145, titanium grade II, and nickel alloy 200 form plasma when the surface magnetic field reaches 3.5, 3.0, 2.2, and 2.6 megagauss, respectively. Varying the element metal, as well as the alloy, changes multiple physical properties of the load and affects the evolution of the surface material through the multiple phase changes. Similarities and differences between these metals will be presented, giving motivation for continued work with different material loads. During the current rise, the metal is heated to temperatures that cause multiple phase changes. When the surface magnetic field reaches a threshold, the metal ionizes and the plasma becomes pinched against the underlying cooler, dense material. Diagnostics fielded have included visible light radiometry, two-frame shadowgraphy (266 and 532 nm wavelengths), time-gated EUV spectroscopy, single-frame/2ns gated imaging, and multi-frame/4ns gated imaging with an intensified CCD camera (ICCD). Surface temperature, expansion speeds, instability growth, time of plasma formation, and plasma uniformity are determined from the data. The time-period of potential plasma formation is scrutinized to understand if and when plasma forms on the surface of a heated conductor. When photodiode signals of visible light surface emission reach values indicating temperatures consistent with plasma formation, a sharp increase in signal is observed, which can be interpreted as related to an abrupt increase in conductivity when plasma forms, as has been observed experimentally as well as in Quantum Molecular Dynamic simulations. The increase in conductivity, in the context of an overall rising current, causes an abrupt increase in current density in the plasma-forming layer, leading to an increase in temperature that reinforces the increase in conductivity. Laser shadowgaphy images allow for the observation of expansion as well as the development and evolution of surface instabilities. The sudden expansion of the surface of a heated conductor is not sufficient to claim plasma formation. The development of late-time surface instabilities does indicate surface plasma formed, although it does not pinpoint the moment of plasma formation. The self-emission images captured by ICCD cameras provide a third indicator of plasma formation. The images first show non-uniform dots begin to glow, then show bright filaments in the direction of current flow, and eventually show a uniform surface emission. The early dots are believed to be plasma; however, the filamentation occurs near the time of the abrupt increase in the visible diode signal. The filaments are likely caused by electrothermal instabilities a formation attributed to a plasma. The interplay between an ohmically heated conductor and a magnetic field is important for the field of Magnetized Target Fusion (MTF). MTF compresses a magnetized fuel by imploding a flux-conserving metal liner. During compression, fields reach several megagauss, with a fraction of the flux diffusing into the metal liner. The magnetic field induces eddy currents in the metal, leading to ionization and potential mixing of metal contaminant into the fusion fuel.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

NASA Astrophysics Data System (ADS)

Ke, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping

2015-10-01

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10-4 Ω cm2 was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 108 cm-2. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (Vo) in the InON nanodots played a crucial role in carrier transport. The fitting I-V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

Magnetic Reconnection Processes Involving Modes Propagating in the Ion Diamagnetic Velocity Direction

NASA Astrophysics Data System (ADS)

Buratti, P.; Coppi, B.; Pucella, G.; Zhou, T.

2013-10-01

Experiments in weakly collisional plasma regimes, (e.g. neutral beam heated plasmas in the H-regime), measuring the Doppler shift associated with the plasma local rotation, have shown that the toroidal mode phase velocity vph in the frame with Er = 0 is in the direction of the ion diamagnetic velocity. For ohmically heated plasmas, with higher collisionalities, vph in the laboratory frame is in the direction of the electron diamagnetic velocity, but plasma rotation is reversed as well, and vph, in the Er = 0 frame, is in the ion diamagnetic velocity direction. Theoretically, two classes of reconnecting modes should emerge: drift-tearing modes and ``inductive modes'' that depend on the effects of a finite plasma inductivity. The former modes, with vph in the direction of the electron diamagnetic velocity, require the pre-excitation of a different kind of mode in order to become unstable in weakly collisional regimes. The second kind of modes has a growth rate associated with the relevant finite ion viscosity. A comprehensive theory is presented. Sponsored in part by the US DOE.

Voltage-induced Metal-Insulator Transitions in Perovskite Oxide Thin Films Doped with Strongly Correlelated Electrons

NASA Astrophysics Data System (ADS)

Wang, Yudi; Gil Kim, Soo; Chen, I.-Wei

2007-03-01

We have observed a reversible metal-insulator transition in perovskite oxide thin films that can be controlled by charge trapping pumped by a bipolar voltage bias. In the as-fabricated state, the thin film is metallic with a very low resistance comparable to that of the metallic bottom electrode, showing decreasing resistance with decreasing temperature. This metallic state switches to a high-resistance state after applying a voltage bias: such state is non-ohmic showing a negative temperature dependence of resistance. Switching at essentially the same voltage bias was observed down to 2K. The metal-insulator transition is attributed to charge trapping that disorders the energy of correlated electron states in the conduction band. By increasing the amount of charge trapped, which increases the disorder relative to the band width, increasingly more insulating states with a stronger temperature dependence of resistivity are accessed. This metal-insulator transition provides a platform to engineer new nonvolatile memory that does not require heat (as in phase transition) or dielectric breakdown (as in most other oxide resistance devices).

Experimental and analytical analysis of polarization and water transport behaviors of hydrogen alkaline membrane fuel cell

NASA Astrophysics Data System (ADS)

Huo, Sen; Zhou, Jiaxun; Wang, Tianyou; Chen, Rui; Jiao, Kui

2018-04-01

Experimental test and analytical modeling are conducted to investigate the operating behavior of an alkaline electrolyte membrane (AEM) fuel cell fed by H2/air (or O2) and explore the effect of various operating pressures on the water transfer mechanism. According to the experimental test, the cell performance is greatly improved through increasing the operating pressure gradient from anode to cathode which leads to significant liquid water permeation through the membrane. The high frequency resistance of the A901 alkaline membrane is observed to be relatively stable as the operating pressure varies based on the electrochemical impedance spectroscopy (EIS) method. Correspondingly, based on the modeling prediction, the averaged water content in the membrane electrode assembly (MEA) does not change too much which leads to the weak variation of membrane ohmic resistance. This reveals that the performance enhancement should give the credit to better electro-chemical reaction kinetics for both the anode and cathode, also prone by the EIS results. The reversion of water back diffusion direction across the membrane is also observed through analytical solution.

Thermally coupled moving boundary model for charge-discharge of LiFePO4/C cells

NASA Astrophysics Data System (ADS)

Khandelwal, Ashish; Hariharan, Krishnan S.; Gambhire, Priya; Kolake, Subramanya Mayya; Yeo, Taejung; Doo, Seokgwang

2015-04-01

Optimal thermal management is a key requirement in commercial utilization of lithium ion battery comprising of phase change electrodes. In order to facilitate design of battery packs, thermal management systems and fast charging profiles, a thermally coupled electrochemical model that takes into account the phase change phenomenon is required. In the present work, an electrochemical thermal model is proposed which includes the biphasic nature of phase change electrodes, such as lithium iron phosphate (LFP), via a generalized moving boundary model. The contribution of phase change to the heat released during the cell operation is modeled using an equivalent enthalpy approach. The heat released due to phase transformation is analyzed in comparison with other sources of heat such as reversible, irreversible and ohmic. Detailed study of the thermal behavior of the individual cell components with changing ambient temperature, rate of operation and heat transfer coefficient is carried out. Analysis of heat generation in the various regimes is used to develop cell design and operating guidelines. Further, different charging protocols are analyzed and a model based methodology is suggested to design an efficient quick charging protocol.

Design and fabrication of segmented-in-series solid oxide fuel cells

NASA Astrophysics Data System (ADS)

Lai, Tammy S.

Segmented-in-series solid oxide fuel cells (SS-SOFC) consist of several thick film cells deposited onto a porous, flattened tubular substrate. SS-SOFCs have a reduced need for gas-tight seals relative to planar SOFCs and can have a short current path compared to tubular SOFCs, limiting electrode ohmic resistance. Like tubular SOFCs, SS-SOFCs are suitable for stationary power generation. Their potentially small cell size makes them candidates for portable applications as well. The goals of this thesis project were to develop SS-SOFCs with 1-2 mm cell lengths and to analyze the effects of cell geometry and support current shunting on performance. Standard SOFC materials were chosen for the active components: yttria stabilized zirconia (YSZ) electrolyte; Ni-YSZ cermet anode; and (La,Sr)MnO 3-based cathode. A Pt-YSZ cermet was used as the interconnect material. Screen printing was the deposition method for all layers due to its low cost and patterning ability. A power density of >900 mW/cm2 was achieved with a cathode sheet resistance of ≈3 O/□ (≈90 mum LSM thickness). A D-optimal study was conducted to find processing conditions yielding substrates with ≥30 vol% porosity and high strength. Uniaxially pressed partially stabilized zirconia (PSZ) with 15 wt% starch pore former met the requirements, though 20 wt% graphite pore former was later found to give a smoother surface that improved screen printed layer quality. Calculations presented in this thesis take into account losses due to cell resistances, electrode ohmic resistances, interconnect resistance, and shunting by a weakly-conductive support material. Power density was maximized at an optimal cell length---it decreased at larger cell lengths due to electrode lateral resistance loss and at smaller cell lengths due to a decreasing fraction of cell active area. Assuming dimensions expected for screen printing and typical area specific resistances (RAS), optimal cell lengths typically ranged from 1 to 3 mm. The calculated and experimental values for the array RAS (active and inactive areas) showed similar dependences on cathode sheet resistance. The impact of shunting current increased with decreasing cell lengths. Shunting current was predicted to decrease array current by ˜10% for a 1.5 mm active cell length, though experimental measurements suggest that the calculation may overestimate the shunting effect.

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Ward, John; Lin, Robert; Leon, Rosa; Pearson, John; Mehdi, Imran

2003-01-01

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

Simulations towards the achievement of non-inductive current ramp-up and sustainment in the National Spherical Torus Experiment Upgrade

DOE PAGES

Poli, F. M.; Andre, R. G.; Bertelli, N.; ...

2015-10-30

One of the goals of the National Spherical Torus Experiment Upgrade (NSTX-U) (Menard et al 2012 Nucl. Fusion 52 083015) is the demonstration of fully non-inductive start-up, current ramp-up and sustainment. This work discusses predictive simulations where the available heating and current drive systems are combined to maximize the non-inductive current and minimize the solenoidal contribution. Radio-frequency waves at harmonics higher than the ion cyclotron resonance (high-harmonic fast waves (HHFW)) and neutral beam injection are used to ramp the plasma current non-inductively starting from an initial Ohmic plasma. An interesting synergy is observed in the simulations between the HHFW andmore » electron cyclotron (EC) wave heating. Furthermore, time-dependent simulations indicate that, depending on the phasing of the HHFW antenna, EC wave heating can significantly increase the effectiveness of the radio-frequency power, by heating the electrons and increasing the current drive efficiency, thus relaxing the requirements on the level of HHFW power that needs to be absorbed in the core plasma to drive the same amount of fast-wave current.« less

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

NASA Astrophysics Data System (ADS)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Study of Turbulence and Radial Electric Field Transitions in ASDEX Upgrade using Doppler Reflectometry

NASA Astrophysics Data System (ADS)

Conway, Garrard

2006-10-01

The radial electric field is recognised as an important factor in the performance of magnetically confined fusion plasmas. On ASDEX Upgrade microwave Doppler reflectometry has been developed to directly measure Er profiles, its shear and its fluctuations. Here a poloidally tilted antenna selects via Bragg a specific turbulence wavenumber giving a frequency shift directly proportional to the perpendicular rotation velocity u= vE xB+ vturb of the turbulence moving in the plasma. Turbulence simulations show vE xBvturb allowing simple extraction of Er with good accuracy. In the scrape-off-layer Er is positive, but reverses across the separatrix due to the pedestal pressure gradient to form a negative well. The strength of the well scales directly with confinement, typically -50V/cm for ohmic/L-mode, rising to -300V/cm for H-mode and in excess of -500V/cm for improved H-modes. Without NBI vE xB vturb which allows the turbulence behaviour to be investigated. For example the core rotation reverses from ion to electron direction when plasma collisionality is raised while matched gyro-kinetic turbulence simulations show the dominant turbulence changing from TEM to ITG with corresponding vturb reversal, which implies the core Er reverses sign with the turbulence. Also of major importance to confinement are zonal flows and GAMs - radially localised oscillating E xB flows. Er fluctuations directly measured by Doppler refl. reveal coherent modes in the edge gradient region where turbulence vorticity and Er shear are largest. The mode frequency scales as sound speed over major radius but is sensitive to plasma shape and local q. So far GAMs have not been seen in H-modes, nor in the plasma core. In each topic, the synergetic combination of experiment, theory and numerical simulation aids interpretation shows Er is interlinked with turbulence and the mean plasma profiles. Collaborators: J.Schirmer, W.Suttrop, C.Angioni, R.Dux, F.Jenko, E.Holzhauer, S.Klenge, B.Kurzan, C.Maggi, A.G.Peeters, M.Reich, F.Ryter, B.Scott, C.Tr"oster, E.Wolfrum, H.Zohm and the ASDEX Upgrade Team.

Communication: spin-boson model with diagonal and off-diagonal coupling to two independent baths: ground-state phase transition in the deep sub-Ohmic regime.

PubMed

Zhao, Yang; Yao, Yao; Chernyak, Vladimir; Zhao, Yang

2014-04-28

We investigate a spin-boson model with two boson baths that are coupled to two perpendicular components of the spin by employing the density matrix renormalization group method with an optimized boson basis. It is revealed that in the deep sub-Ohmic regime there exists a novel second-order phase transition between two types of doubly degenerate states, which is reduced to one of the usual types for nonzero tunneling. In addition, it is found that expectation values of the spin components display jumps at the phase boundary in the absence of bias and tunneling.

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

NASA Astrophysics Data System (ADS)

Wong, Man Hoi; Pei, Yi; Palacios, Tomás; Shen, Likun; Chakraborty, Arpan; McCarthy, Lee S.; Keller, Stacia; DenBaars, Steven P.; Speck, James S.; Mishra, Umesh K.

2007-12-01

Nonalloyed Ohmic contacts on Ga-face n+-GaN/AlGaN/GaN high electron mobility transistor (HEMT) structures typically have significant contact resistance to the two-dimensional electron gas (2DEG) due to the AlGaN barrier. By growing the HEMT structure inverted on the N-face, electrons from the contacts were able to access the 2DEG without going through an AlGaN layer. A low contact resistance of 0.16Ωmm and specific contact resistivity of 5.5×10-7Ωcm2 were achieved without contact annealing on the inverted HEMT structure.

Two-terminal monolithic InP-based tandem solar cells with tunneling intercell ohmic connections

NASA Technical Reports Server (NTRS)

Shen, C. C.; Chang, P. T.; Emery, K. A.

1991-01-01

A monolithic two-terminal InP/InGaAsP tandem solar cell was successfully fabricated. This tandem solar cell consists of a p/n InP homojunction top subcell and a 0.95 eV p/n InGaAsP homojunction bottom subcell. A patterned 0.95 eV n(+)/p(+) InGaAsP tunnel diode was employed as an intercell ohmic connection. The solar cell structure was prepared by two-step liquid phase epitaxial growth. Under one sun, AM1.5 global illumination, the best tandem cell delivered a conversion efficiency of 14.8 pct.

Transparent indium-tin oxide/indium-gallium-zinc oxide Schottky diodes formed by gradient oxygen doping

NASA Astrophysics Data System (ADS)

Ho, Szuheng; Yu, Hyeonggeun; So, Franky

2017-11-01

Amorphous InGaZnO (a-IGZO) is promising for transparent electronics due to its high carrier mobility and optical transparency. However, most metal/a-IGZO junctions are ohmic due to the Fermi-level pinning at the interface, restricting their device applications. Here, we report that indium-tin oxide/a-IGZO Schottky diodes can be formed by gradient oxygen doping in the a-IGZO layer that would otherwise form an ohmic contact. Making use of back-to-back a-IGZO Schottky junctions, a transparent IGZO permeable metal-base transistor is also demonstrated with a high common-base gain.

Transparent ZnO-based ohmic contact to p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminska, E.; Piotrowska, A.; Golaszewska, K.

2002-04-09

Highly conductive ZnO films were fabricated on p-GaN in a two-step process. First, zinc was thermally evaporated on p-GaN. Next, zinc film was oxidized in oxygen flow. To increase the conductivity of ZnO, nitrogen was introduced into zinc during its deposition. The above procedure proved successful in fabricating ZnO of the resistivity of {approx}1 x 10{sup -3} {Omega}cm and resulted in ohmic contacts of resistivity {approx}1 x 10{sup -2} {Omega}cm{sup 2} to low-doped p-GaN, and light transmittance of {approx}75% in the wavelength range of 400-700 nm.

Better Ohmic Contacts For InP Semiconductor Devices

NASA Technical Reports Server (NTRS)

Weizer, Victor G.; Fatemi, Navid S.

1995-01-01

Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

Product formulation for ohmic heating: blanching as a pretreatment method to improve uniformity in heating of solid-liquid food mixtures.

PubMed

Sarang, S; Sastry, S K; Gaines, J; Yang, T C S; Dunne, P

2007-06-01

The electrical conductivity of food components is critical to ohmic heating. Food components of different electrical conductivities heat at different rates. While equal electrical conductivities of all phases are desirable, real food products may behave differently. In the present study involving chicken chow mein consisting of a sauce and different solid components, celery, water chestnuts, mushrooms, bean sprouts, and chicken, it was observed that the sauce was more conductive than all solid components over the measured temperature range. To improve heating uniformity, a blanching method was developed to increase the ionic content of the solid components. By blanching different solid components in a highly conductive sauce at 100 degrees C for different lengths of time, it was possible to adjust their conductivity to that of the sauce. Chicken chow mein samples containing blanched particulates were compared with untreated samples with respect to ohmic heating uniformity at 60 Hz up to 140 degrees C. All components of the treated product containing blanched solids heated more uniformly than untreated product. In sensory tests, 3 different formulations of the blanched product showed good quality attributes and overall acceptability, demonstrating the practical feasibility of the blanching protocol.

The effect of acute exposure to hyperbaric oxygen on respiratory system mechanics in the rat.

PubMed

Rubini, Alessandro; Porzionato, Andrea; Zara, Susi; Cataldi, Amelia; Garetto, Giacomo; Bosco, Gerardo

2013-10-01

This study was designed to investigate the possible effects of acute hyperbaric hyperoxia on respiratory mechanics of anaesthetised, positive-pressure ventilated rats. We measured respiratory mechanics by the end-inflation occlusion method in nine rats previously acutely exposed to hyperbaric hyperoxia in a standard fashion. The method allows the measurements of respiratory system elastance and of both the "ohmic" and of the viscoelastic components of airway resistance, which respectively depend on the newtonian pressure dissipation due to the ohmic airway resistance to air flow, and on the viscoelastic pressure dissipation caused by respiratory system tissues stress-relaxation. The activities of inducible and endothelial NO-synthase in the lung's tissues (iNOS and eNOS respectively) also were investigated. Data were compared with those obtained in control animals. We found that the exposure to hyperbaric hyperoxia increased respiratory system elastance and both the "ohmic" and viscoelastic components of inspiratory resistances. These changes were accompanied by increased iNOS but not eNOS activities. Hyperbaric hyperoxia was shown to acutely induce detrimental effects on respiratory mechanics. A possible causative role was suggested for increased nitrogen reactive species production because of increased iNOS activity.

Bayesian Analysis of Hot Jupiter Radius Anomalies Points to Ohmic Dissipation

NASA Astrophysics Data System (ADS)

Thorngren, Daniel; Fortney, Jonathan

2018-01-01

The cause of the unexpectedly large radii of hot Jupiters has been the subject of many hypotheses over the past 15 years and is one of the long-standing open issues in exoplanetary physics. In our work, we seek to examine the population of 300 hot Jupiters to identify a model that best explains their radii. Using a hierarchical Bayesian framework, we match structure evolution models to the observed giant planets’ masses, radii, and ages, with a prior for bulk composition based on the mass from Thorngren et al. (2016). We consider various models for the relationship between heating efficiency (the fraction of flux absorbed into the interior) and incident flux. For the first time, we are able to derive this heating efficiency as a function of planetary T_eq. Models in which the heating efficiency decreases at the higher temperatures (above ~1600 K) are strongly and statistically significantly preferred. Of the published models for the radius anomaly, only the Ohmic dissipation model predicts this feature, which it explains as being the result of magnetic drag reducing atmospheric wind speeds. We interpret our results as evidence in favor of the Ohmic dissipation model.

Current-voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs.

PubMed

Xu, Kaikai

2013-09-20

In this paper, the emission of visible light by a monolithically integrated silicon p-n junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the p-n junction. By varying the gate voltage, the breakdown voltage of the p-n junction will be adjustable so that the reverse current I(sub) flowing through the p-n junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the p-n junction, depends closely on the reverse current I(sub). In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current I(sub) is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the p-n junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal-oxide-semiconductor process technology is presented.

Thermal analysis and management of lithium-titanate batteries

NASA Astrophysics Data System (ADS)

Giuliano, Michael R.; Advani, Suresh G.; Prasad, Ajay K.

2011-08-01

Battery electric vehicles and hybrid electric vehicles demand batteries that can store large amounts of energy in addition to accommodating large charge and discharge currents without compromising battery life. Lithium-titanate batteries have recently become an attractive option for this application. High current thresholds allow these cells to be charged quickly as well as supply the power needed to drive such vehicles. These large currents generate substantial amounts of waste heat due to loss mechanisms arising from the cell's internal chemistry and ohmic resistance. During normal vehicle operation, an active cooling system must be implemented to maintain a safe cell temperature and improve battery performance and life. This paper outlines a method to conduct thermal analysis of lithium-titanate cells under laboratory conditions. Thermochromic liquid crystals were implemented to instantaneously measure the entire surface temperature field of the cell. The resulting temperature measurements were used to evaluate the effectiveness of an active cooling system developed and tested in our laboratory for the thermal management of lithium-titanate cells.

Ultrastable low-noise current amplifier: a novel device for measuring small electric currents with high accuracy.

PubMed

Drung, D; Krause, C; Becker, U; Scherer, H; Ahlers, F J

2015-02-01

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drung, D.; Krause, C.; Becker, U.

2015-02-15

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA’s transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibratemore » both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.« less

Ultrastable low-noise current amplifier: A novel device for measuring small electric currents with high accuracy

NASA Astrophysics Data System (ADS)

Drung, D.; Krause, C.; Becker, U.; Scherer, H.; Ahlers, F. J.

2015-02-01

An ultrastable low-noise current amplifier (ULCA) is presented. The ULCA is a non-cryogenic instrument based on specially designed operational amplifiers and resistor networks. It involves two stages, the first providing a 1000-fold current gain and the second performing a current-to-voltage conversion via an internal 1 MΩ reference resistor or, optionally, an external standard resistor. The ULCA's transfer coefficient is highly stable versus time, temperature, and current amplitude within the full dynamic range of ±5 nA. The low noise level of 2.4 fA/√Hz helps to keep averaging times short at small input currents. A cryogenic current comparator is used to calibrate both input current gain and output transresistance, providing traceability to the quantum Hall effect. Within one week after calibration, the uncertainty contribution from short-term fluctuations and drift of the transresistance is about 0.1 parts per million (ppm). The long-term drift is typically 5 ppm/yr. A high-accuracy variant is available that shows improved stability of the input gain at the expense of a higher noise level of 7.5 fA/√Hz. The ULCA also allows the traceable generation of small electric currents or the calibration of high-ohmic resistors.

Fully non-inductive plasma start-up with lower-hybrid waves using the outboard-launch and top-launch antennas on the TST-2 spherical tokamak

NASA Astrophysics Data System (ADS)

Tsujii, Naoto; Takase, Yuichi; Ejiri, Akira; Shinya, Takahiro; Yajima, Satoru; Yamazaki, Hibiki; Togashi, Hiro; Moeller, Charles P.; Roidl, Benedikt; Takahashi, Wataru; Toida, Kazuya; Yoshida, Yusuke

2017-10-01

Removal of the central solenoid is essential to realize an economical spherical tokamak fusion reactor, but non-inductive plasma start-up is a challenge. On the TST-2 spherical tokamak, non-inductive plasma start-up using lower-hybrid (LH) waves has been investigated. Using the capacitively-coupled combline (CCC) antenna installed at the outboard midplane, fully non-inductive plasma current ramp-up up to a quarter of that of the typical Ohmic discharges has been achieved. Although it was desirable to keep the density low during the plasma current ramp-up to avoid the LH density limit, it was recognized that there was a maximum current density that could be carried by a given electron density. Since the density needed to increase as the plasma current was ramped-up, the achievable plasma current was limited by the maximum operational toroidal field of TST-2. The top-launch CCC antenna was installed to access higher density with up-shift of the parallel index of refraction. Numerical analysis of LH current drive with the outboard-launch and top-launch antennas was performed and the results were qualitatively consistent with the experimental observations.

Three-dimensional graphene nanosheets as cathode catalysts in standard and supercapacitive microbial fuel cell

NASA Astrophysics Data System (ADS)

Santoro, Carlo; Kodali, Mounika; Kabir, Sadia; Soavi, Francesca; Serov, Alexey; Atanassov, Plamen

2017-07-01

Three-dimensional graphene nanosheets (3D-GNS) were used as cathode catalysts for microbial fuel cells (MFCs) operating in neutral conditions. 3D-GNS catalysts showed high performance towards oxygen electroreduction in neutral media with high current densities and low hydrogen peroxide generation compared to activated carbon (AC). 3D-GNS was incorporated into air-breathing cathodes based on AC with three different loadings (2, 6 and 10 mgcm-2). Performances in MFCs showed that 3D-GNS had the highest performances with power densities of 2.059 ± 0.003 Wm-2, 1.855 ± 0.007 Wm-2 and 1.503 ± 0.005 Wm-2 for loading of 10, 6 and 2 mgcm-2 respectively. Plain AC had the lowest performances (1.017 ± 0.009 Wm-2). The different cathodes were also investigated in supercapacitive MFCs (SC-MFCs). The addition of 3D-GNS decreased the ohmic losses by 14-25%. The decrease in ohmic losses allowed the SC-MFC with 3D-GNS (loading 10 mgcm-2) to have the maximum power (Pmax) of 5.746 ± 0.186 Wm-2. At 5 mA, the SC-MFC featured an "apparent" capacitive response that increased from 0.027 ± 0.007 F with AC to 0.213 ± 0.026 F with 3D-GNS (loading 2 mgcm-2) and further to 1.817 ± 0.040 F with 3D-GNS (loading 10 mgcm-2).

The fabrication of integrated carbon pipes with sub-micron diameters

NASA Astrophysics Data System (ADS)

Kim, B. M.; Murray, T.; Bau, H. H.

2005-08-01

A method for fabricating integrated carbon pipes (nanopipettes) of sub-micron diameters and tens of microns in length is demonstrated. The carbon pipes are formed from a template consisting of the tip of a pulled alumino-silicate glass capillary coated with carbon deposited from a vapour phase. This method renders carbon nanopipettes without the need for ex situ assembly and facilitates parallel production of multiple carbon-pipe devices. An electric-field-driven transfer of ions in a KCl solution through the integrated carbon pipes exhibits nonlinear current-voltage (I-V) curves, markedly different from the Ohmic I-V curves observed in glass pipettes under similar conditions. The filling of the nanopipette with fluorescent suspension is also demonstrated.

Improved Confinement by Edge Multi-pulse Turbulent Heating on HT-6M Tokamak

NASA Astrophysics Data System (ADS)

Mao, Jian-shan; Luo, Jia-rong; Li, Jian-gang; Pan, Yuan; Wang, Mao-quan; Liu, Bao-hua; Wan, Yuan-xi; Li, Qiang; Wu, Xin-chao; Liang, Yun-feng; Xu, Yu-hong; Yu, Chang-xuan

1997-10-01

In the recent experiment on HT-6M tokamak, an improved ohmic confinement phase has been observed after application of the edge multi-pulse turbulent heating, and variance of plasma current ΔIp/Ip is about 14-20%. The improved edge plasma confinement phase is characterized by (a) increased average electron density bar Ne and electron temperature Te; (b) reduced Hα radiation from the edge; (c) steeper density and temperature profiles at the edge; (d) a more negative radial electric field over a region of ~ 5 mm deep inside the limiter; (e) a deeper electrostatic potential well at the edge; (f) reduced magnetic fluctuations at the edge.

Analog bus driver and multiplexer

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor); Hancock, Bruce (Inventor); Cunningham, Thomas J. (Inventor)

2012-01-01

For a source-follower signal chain, the ohmic drop in the selection switch causes unacceptable voltage offset, non-linearity, and reduced small signal gain. For an op amp signal chain, the required bias current and the output noise rises rapidly with increasing the array format due to a rapid increase in the effective capacitance caused by the Miller effect boosting up the contribution of the bus capacitance. A new switched source-follower signal chain circuit overcomes limitations of existing op-amp based or source follower based circuits used in column multiplexers and data readout. This will improve performance of CMOS imagers, and focal plane read-out integrated circuits for detectors of infrared or ultraviolet light.

Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

2006-08-01

Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

Shaping metallic glasses by electromagnetic pulsing

PubMed Central

Kaltenboeck, Georg; Demetriou, Marios D.; Roberts, Scott; Johnson, William L.

2016-01-01

With damage tolerance rivalling advanced engineering alloys and thermoplastic forming capabilities analogous to conventional plastics, metallic glasses are emerging as a modern engineering material. Here, we take advantage of their unique electrical and rheological properties along with the classic Lorentz force concept to demonstrate that electromagnetic coupling of electric current and a magnetic field can thermoplastically shape a metallic glass without conventional heating sources or applied mechanical forces. Specifically, we identify a process window where application of an electric current pulse in the presence of a normally directed magnetic field can ohmically heat a metallic glass to a softened state, while simultaneously inducing a large enough magnetic body force to plastically shape it. The heating and shaping is performed on millisecond timescales, effectively bypassing crystallization producing fully amorphous-shaped parts. This electromagnetic forming approach lays the groundwork for a versatile, time- and energy-efficient manufacturing platform for ultrastrong metals. PMID:26853460

Laser diode with thermal conducting, current confining film

NASA Technical Reports Server (NTRS)

Hawrylo, Frank Z. (Inventor)

1980-01-01

A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.

Influence of DC-biasing on the performance of graphene spin valve

NASA Astrophysics Data System (ADS)

Iqbal, Muhammad Zahir; Hussain, Ghulam; Siddique, Salma; Hussain, Tassadaq; Iqbal, Muhammad Javaid

2018-04-01

Generating and controlling the spin valve signal are key factors in 'spintronics', which aims to utilize the spin degree of electrons. For this purpose, spintronic devices are constructed that can detect the spin signal. Here we investigate the effect of direct current (DC) on the magnetoresistance (MR) of graphene spin valve. The DC input not only decreases the magnitude of MR but also distorts the spin valve signal at higher DC inputs. Also, low temperature measurements revealed higher MR for the device, while the magnitude is noticed to decrease at higher temperatures. Furthermore, the spin polarization associated with NiFe electrodes is continuously increased at low DC bias and low temperatures. We also demonstrate the ohmic behavior of graphene spin valve by showing linear current-voltage (I-V) characteristics of the junction. Our findings may contribute significantly in modulating and controlling the spin transport properties of vertical spin valve structures.

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

NASA Technical Reports Server (NTRS)

Von Roos, O.

1980-01-01

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Entani, Shiro, E-mail: entani.shiro@jaea.go.jp; Naramoto, Hiroshi; Sakai, Seiji

2015-05-07

Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8%more » at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.« less

Issues associated with modelling of proton exchange membrane fuel cell by computational fluid dynamics

NASA Astrophysics Data System (ADS)

Bednarek, Tomasz; Tsotridis, Georgios

2017-03-01

The objective of the current study is to highlight possible limitations and difficulties associated with Computational Fluid Dynamics in PEM single fuel cell modelling. It is shown that an appropriate convergence methodology should be applied for steady-state solutions, due to inherent numerical instabilities. A single channel fuel cell model has been taken as numerical example. Results are evaluated for quantitative as well qualitative points of view. The contribution to the polarization curve of the different fuel cell components such as bi-polar plates, gas diffusion layers, catalyst layers and membrane was investigated via their effects on the overpotentials. Furthermore, the potential losses corresponding to reaction kinetics, due to ohmic and mas transport limitations and the effect of the exchange current density and open circuit voltage, were also investigated. It is highlighted that the lack of reliable and robust input data is one of the issues for obtaining accurate results.

Liquid methanol under a static electric field

NASA Astrophysics Data System (ADS)

Cassone, Giuseppe; Giaquinta, Paolo V.; Saija, Franz; Saitta, A. Marco

2015-02-01

We report on an ab initio molecular dynamics study of liquid methanol under the effect of a static electric field. We found that the hydrogen-bond structure of methanol is more robust and persistent for field intensities below the molecular dissociation threshold whose value (≈0.31 V/Å) turns out to be moderately larger than the corresponding estimate obtained for liquid water. A sustained ionic current, with ohmic current-voltage behavior, flows in this material for field intensities above 0.36 V/Å, as is also the case of water, but the resulting ionic conductivity (≈0.40 S cm-1) is at least one order of magnitude lower than that of water, a circumstance that evidences a lower efficiency of proton transfer processes. We surmise that this study may be relevant for the understanding of the properties and functioning of technological materials which exploit ionic conduction, such as direct-methanol fuel cells and Nafion membranes.

Electrical description of N2 capacitively coupled plasmas with the global model

NASA Astrophysics Data System (ADS)

Cao, Ming-Lu; Lu, Yi-Jia; Cheng, Jia; Ji, Lin-Hong; Engineering Design Team

2016-10-01

N2 discharges in a commercial capacitively coupled plasma reactor are modelled by a combination of an equivalent circuit and the global model, for a range of gas pressure at 1 4 Torr. The ohmic and inductive plasma bulk and the capacitive sheath are represented as LCR elements, with electrical characteristics determined by plasma parameters. The electron density and electron temperature are obtained from the global model in which a Maxwellian electron distribution is assumed. Voltages and currents are recorded by a VI probe installed after the match network. Using the measured voltage as an input, the current flowing through the discharge volume is calculated from the electrical model and shows excellent agreement with the measurements. The experimentally verified electrical model provides a simple and accurate description for the relationship between the external electrical parameters and the plasma properties, which can serve as a guideline for process window planning in industrial applications.

Fabrication and Analysis of a Selectively Contacted Dual Channel High Electron Mobility Field-Effect Transistor

NASA Astrophysics Data System (ADS)

Khanna, Ravi

1992-01-01

A selectively contacted dual-channel high electron mobility transistor (SCD-CHEMT) has been designed, fabricated, and electrically characterized, in order to better understand the properties of two layers of two-dimensional electron gases (2DEGs) confined within a quantum well. The 2DEGs are placed under a Schottky barrier control gate which modulates their sheet charge densities, and by use of auxiliary Schottky barrier gates and two levels of ohmic contacts, electrical contacts to the individual channels in which each 2DEG resides is achieved. The design of the dual channel FET structure, and its practical realization by recourse to process development and fabrication are described, as are the techniques, results, and interpretations of electrical characterizations used to analyze the completed device. Critical fabrication procedures involving photolithography, etching, deposition, shallow and deep ohmic contact formation, and gate formation are developed, and a simple technique to reduce gate leakage by photo-oxidation is demonstrated. Analysis of the completed device is performed using one-dimensional band diagram simulations, magnetotransport and electrical measurements. Magnetotransport studies establish the existence of two 2DEGs within the quantum well at 4K. Drain current vs. drain voltage, and transconductance vs. gate voltage characteristics at room temperature confirm the presence of two 2DEGs and show that current flow between them occurs easily at room temperature. Carrier electron mobility profiles are taken of the 2DEGs and show that the lower 2DEG has a mobility comparable to that of a 2DEG formed at a normal interface, indicating that the "inverted interface problem" has been overcome. Capacitance vs. gate voltage measurements are taken, which are consistent with a simple device model consisting of gate depletion and interelectrode parasitic capacitances. It is concluded from the analysis that the dual channel system resides in three basic states: (1) Both channels are occupied by 2DEGs or (2) The upper channel is depleted, or (3) Both channels depleted. Finally, increase in isolation between the two 2DEGs is dramatically demonstrated at 77K by the drain current vs. drain voltage, and transconductance vs. gate voltage characteristics.

Energy efficient and fast reversal of a fixed skyrmion two-terminal memory with spin current assisted by voltage controlled magnetic anisotropy

NASA Astrophysics Data System (ADS)

Bhattacharya, Dhritiman; Mamun Al-Rashid, Md; Atulasimha, Jayasimha

2017-10-01

Recent work (P-H Jang et al 2015 Appl. Phys. Lett. 107 202401, J. Sampaio et al 2016 Appl. Phys. Lett. 108 112403) suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of Dzyaloshinskii-Moriya interaction (DMI) than switching a typical ferromagnet of the same dimensions and perpendicular magnetic anisotropy (PMA). However, DMI promotes the stabilization of skyrmions and we report that when perpendicular anisotropy is modulated (reduced) for both the skyrmion and ferromagnet, it takes a much smaller current to reverse the fixed skyrmion than to reverse the ferromagnet in the same amount of time, or the skyrmion reverses much faster than the ferromagnet at similar levels of current. We show with rigorous micromagnetic simulations that skyrmion switching proceeds along a different path at very low PMA, which results in a significant reduction in the spin current or time required for reversal. This can offer potential for memory applications where a relatively simple modification of the standard STT-RAM (to include a heavy metal adjacent to the soft magnetic layer and with appropriate design of the tunnel barrier) can lead to an energy efficient and fast magnetic memory device based on the reversal of fixed skyrmions.

Evidence for oxygen vacancy or ferroelectric polarization induced switchable diode and photovoltaic effects in BiFeO3 based thin films.

PubMed

Guo, Yiping; Guo, Bing; Dong, Wen; Li, Hua; Liu, Hezhou

2013-07-12

The diode and photovoltaic effects of BiFeO3 and Bi0.9Sr0.1FeO(3-δ) polycrystalline thin films were investigated by poling the films with increased magnitude and alternating direction. It was found that both electromigration of oxygen vacancies and polarization flipping are able to induce switchable diode and photovoltaic effects. For the Bi0.9Sr0.1FeO(3-δ) thin films with high oxygen vacancy concentration, reversibly switchable diode and photovoltaic effects can be observed due to the electromigration of oxygen vacancies under an electric field much lower than its coercive field. However, for the pure BiFeO3 thin films with lower oxygen vacancy concentration, the reversibly switchable diode and photovoltaic effect is hard to detect until the occurrence of polarization flipping. The switchable diode and photovoltaic effects can be explained well using the concepts of Schottky-like barrier-to-Ohmic contacts resulting from the combination of oxygen vacancies and polarization. The sign of photocurrent could be independent of the direction of polarization when the modulation of the energy band induced by oxygen vacancies is large enough to offset that induced by polarization. The photovoltaic effect induced by the electromigration of oxygen vacancies is unstable due to the diffusion of oxygen vacancies or the recombination of oxygen vacancies with hopping electrons. Our work provides deep insights into the nature of diode and photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities.

Radii and Orbits of Hot Jupiters

NASA Astrophysics Data System (ADS)

Wu, Yanqin

2011-09-01

Hot jupiters suffer extreme external (stellar) and internal (tidal, Ohmic and wind-power) heating. These lead to peculiar thermal evolution, which is potentially self-destrutive. For instance, the amount of energy deposited during tidal dissipation far exceeds the planets' binding energy. If this energy is mostly deposited in shallow layers, it does little damage to the planet. However, the presence of stellar insolation changes the picture, and Ohmic/wind-power heating further modifies the subsequent evolution of these jupiters. A diversity of planetary sizes results. We tie these thermodynamical processes together with the migration history of hot jupiters to explain the orbital distribution and physical radii of hot jupiters. Moreover, we constrain the location of tidal heating inside the planet.

Thermally assisted adiabatic quantum computation.

PubMed

Amin, M H S; Love, Peter J; Truncik, C J S

2008-02-15

We study the effect of a thermal environment on adiabatic quantum computation using the Bloch-Redfield formalism. We show that in certain cases the environment can enhance the performance in two different ways: (i) by introducing a time scale for thermal mixing near the anticrossing that is smaller than the adiabatic time scale, and (ii) by relaxation after the anticrossing. The former can enhance the scaling of computation when the environment is super-Ohmic, while the latter can only provide a prefactor enhancement. We apply our method to the case of adiabatic Grover search and show that performance better than classical is possible with a super-Ohmic environment, with no a priori knowledge of the energy spectrum.

Pellet injection research on the HT-6M and HT-7 tokamaks

NASA Astrophysics Data System (ADS)

Yang, Yu; Bao, Yi; Li, Jiangang; Gu, Xuemao; He, Yexi

1999-11-01

A multishot in situ pellet injection system has been constructed in the Institute of Plasma Physics. Single- and multi-pellet injection experiments were performed on the HT-6M and superconducting HT-7 tokamaks. The system proved to be convenient and reliable to operate. Pellets were fired into ohmically and LHCD and ICRF heated plasmas. Single pellet injection in ohmic discharge was found to increase the central density of HT-7 by about one half, while two pellet injection increased the central density in a step-like fashion by one half with each shot. Peaking of the electron density profile and a hollow electron temperature profile were obtained.

Nonthermal electrons in the thick-target reverse-current model for hard X-ray bremsstrahlung

NASA Astrophysics Data System (ADS)

Litvinenko, Iu. E.; Somov, B. V.

1991-02-01

The behavior of the accelerated electrons escaping from a high-temperature source of primary energy in a solar flare is investigated. The direct current of fast electrons is supposed to be balanced by the reverse current of thermal electrons in the ambient colder plasma inside flare loops. The self-consistent kinetic problem is formulated, and the reverse-current electric field and the fast electron distribution function are found from its solution. The X-ray bremsstrahlung polarization is then calculated from the distribution function. The difference of results from those in the case of thermal runaway electrons (Diakonov and Somov, 1988) is discussed. The solutions with and without an account taken of the effect of a reverse-current electric field are also compared.

Initial results in SST-1 after up-gradation

NASA Astrophysics Data System (ADS)

Pradhan, S.; Khan, Z.; Tanna, V. L.; Prasad, U.; Paravastu, Y.; Raval, D. C.; Masand, H.; Kumar, Aveg; Dhongde, J. R.; Jana, S.; Kakati, B.; Patel, K. B.; Bhandarkar, M. K.; Shukla, B. K.; Ghosh, D.; Patel, H. S.; Parekh, T. J.; Mansuri, I. A.; Dhanani, K. R.; Varadharajulu, A.; Khristi, Y. S.; Biswas, P.; Gupta, C. N.; George, S.; Semwal, P.; Sharma, D. K.; Gulati, H. K.; Mahajan, K.; Praghi, B. R.; Banaudha, M.; Makwana, A. R.; Chudasma, H. H.; Kumar, M.; Manchanda, R.; Joisa, Y. S.; Asudani, K.; Pandya, S. N.; Pathak, S. K.; Banerjee, S.; Patel, P. J.; Santra, P.; Pathan, F. S.; Chauhan, P. K.; Khan, M. S.; Thankey, P. L.; Prakash, A.; Panchal, P. N.; Panchal, R. N.; Patel, R. J.; Mahsuria, G. I.; Sonara, D. P.; Patel, K. M.; Jayaswal, S. P.; Sharma, M.; Patel, J. C.; Varmora, P.; Srikanth, G. L. N.; Christian, D. R.; Garg, A.; Bairagi, N.; Babu, G. R.; Panchal, A. G.; Vora, M. M.; Singh, A. K.; Sharma, R.; Nimavat, H. D.; Shah, P. R.; Purwar, G.; Raval, T. Y.; Sharma, A. L.; Ojha, A.; Kumar, S.; Ramaiya, N. K.; Siju, V.; Gopalakrishna, M. V.; Kumar, A.; Sharma, P. K.; Atrey, P. K.; Kulkarni, SV; Ambulkar, K. K.; Parmar, P. R.; Thakur, A. L.; Raval, J. V.; Purohit, S.; Mishra, P. K.; Adhiya, A. N.; Nagora, U. C.; Thomas, J.; Chaudhari, V. K.; Patel, K. G.; Dalakoti, S.; Virani, C. G.; Gupta, S.; Kumar, Ajay; Chaudhari, B.; Kaur, R.; Srinivasan, R.; Raju, D.; Kanabar, D. H.; Jha, R.; Das, A.; Bora, D.

2017-04-01

SST-1 Tokamak has recently completed the 1st phase of up-gradation with successful installation and integration of all its First Wall components. The First Wall of SST-1 comprises of ∼ 3800 high heat flux compatible graphite tiles being assembled and installed on 132 CuCrZr heat sink back plates engraved with ∼ 4 km of leak tight baking and cooling channels in five major sub groups equipped with ∼ 400 sensors and weighing ∼ 6000 kg in total in thirteen isolated galvanic and six isolated hydraulic circuits. The phase-1 up-gradation spectrum also includes addition of Supersonic Molecular Beam Injection (SMBI) both on the in-board and out-board side, installation of fast reciprocating probes, adding some edge plasma probe diagnostics in the SOL region, installation and integration of segmented and up-down symmetric radial coils aiding/controlling plasma rotations, introduction of plasma position feedback and density controls etc. Post phase-I up-gradation spanning from Nov 2014 till June 2016, initial plasma experiments in up-graded SST-1 have begun since Aug 2016 after a brief engineering validation period in SST-1. The first experiments in SST-1 have revealed interesting aspects on the ‘eddy currents in the First Wall support structures’ influencing the ‘magnetic Null evolution dynamics’ and the subsequent plasma start-up characteristics after the ECH pre-ionization, the influence of the first walls on the ‘field errors’ and the resulting locked modes observed, the magnetic index influencing the evolution of the equilibrium of the plasma column, low density supra-thermal electron induced discharges and normal ohmic discharges etc. Presently; repeatable ohmic discharges regimes in SST-1 having plasma currents in excess of 65 KA (qa ∼ 3.8, BT = 1.5 T) with a current ramp rates ∼ 1.2 MA/s over a duration of ∼ 300 ms with line averaged densities ∼ 0.8 × 1019 and temperatures ∼ 200 eV with copious MHD signatures have been experimentally established. Further elongation of the plasma duration up to one second or more with position and density feedback as well as coupling of Lower Hybrid waves are currently being persuaded in SST-1 apart from increasing the core plasma parameters with further optimizations and with wall conditioning.

Density scaling on n  =  1 error field penetration in ohmically heated discharges in EAST

NASA Astrophysics Data System (ADS)

Wang, Hui-Hui; Sun, You-Wen; Shi, Tong-Hui; Zang, Qing; Liu, Yue-Qiang; Yang, Xu; Gu, Shuai; He, Kai-Yang; Gu, Xiang; Qian, Jin-Ping; Shen, Biao; Luo, Zheng-Ping; Chu, Nan; Jia, Man-Ni; Sheng, Zhi-Cai; Liu, Hai-Qing; Gong, Xian-Zu; Wan, Bao-Nian; Contributors, EAST

2018-05-01

Density scaling of error field penetration in EAST is investigated with different n  =  1 magnetic perturbation coil configurations in ohmically heated discharges. The density scalings of error field penetration thresholds under two magnetic perturbation spectra are br\\propto n_e0.5 and br\\propto n_e0.6 , where b r is the error field and n e is the line averaged electron density. One difficulty in understanding the density scaling is that key parameters other than density in determining the field penetration process may also be changed when the plasma density changes. Therefore, they should be determined from experiments. The estimated theoretical analysis (br\\propto n_e0.54 in lower density region and br\\propto n_e0.40 in higher density region), using the density dependence of viscosity diffusion time, electron temperature and mode frequency measured from the experiments, is consistent with the observed scaling. One of the key points to reproduce the observed scaling in EAST is that the viscosity diffusion time estimated from energy confinement time is almost constant. It means that the plasma confinement lies in saturation ohmic confinement regime rather than the linear Neo-Alcator regime causing weak density dependence in the previous theoretical studies.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

NASA Astrophysics Data System (ADS)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition

NASA Astrophysics Data System (ADS)

France, Ryan; Xu, Tao; Chen, Papo; Chandrasekaran, R.; Moustakas, T. D.

2007-02-01

The authors report on the formation and evaluation of V-based Ohmic contacts to n-AlGaN films in the entire alloy composition. The films were produced by plasma assisted molecular beam epitaxy and doped n-type with Si. The conductivity of the films was determined to vary from 103to10-2(Ωcm )-1 as the AlN mole fraction increases from 0% to 100%. Ohmic contacts were formed by e-beam evaporation of V(15nm )/Al(80nm)/V(20nm)/Au(100nm). These contacts were rapid thermal annealed in N2 for 30s at various temperatures. The optimum annealing temperature for this contact scheme to n-GaN is about 650°C and increases monotonically to about 1000°C for 95%-100% AlN mole fraction. The specific contact resistivity was found to be about 10-6Ωcm2 for all films up to 70% AlN mole fraction and then increases to 0.1-1Ωcm2 for films from 95%-100% AlN mole fraction. These results were accounted for by hypothesizing that vanadium, upon annealing, interacts with the nitride film and forms vanadium nitride, which is consistent with reports that it is a metal with low work function.

Reverse current in solar flares

NASA Technical Reports Server (NTRS)

Knight, J. W.; Sturrock, P. A.

1977-01-01

We examine the proposal that impulsive X-ray bursts are produced by high-energy electrons streaming from the corona to the chromosphere. It is known that the currents associated with these streams are so high that either the streams do not exist or their current is neutralized by a reverse current. Analysis of a simple model in which the reverse current is stable indicates that the primary electron stream leads to the development of an electric field in the ambient corona which (a) decelerates the primary beam and (b) produces a neutralizing reverse current. It appears that, in some circumstances, this electric field could prevent the primary beam from reaching the chromosphere. In any case, the electric field acts as an energy exchange mechanism, extracting kinetic energy from the primary beam and using it to heat the ambient plasma. This heating is typically so rapid that it must be expected to have important dynamical consequences.

Two-fluid dynamo relaxation and momentum transport induced by CHI on HIST

NASA Astrophysics Data System (ADS)

Nagata, Masayoshi; Hirono, Hidetoshi; Hanao, Takafumi; Hyobu, Takahiro; Ito, Kengo; Matsumoto, Keisuke; Nakayama, Takashi; Oki, Nobuharu; Kikuchi, Yusuke; Fukumoto, Naoyuki

2013-10-01

Non-inductive current drive by using Multi-pulsing coaxial helicity injection was studied on HIST. In the double-pulsing CHI experiment, we have examined two-fluid effects by reversing polarity of the bias poloidal coil current. In the ST magnetic configurations with the right-handed magnetic field (positive CHI), there are a diamagnetic structure in the open flux column region and a paramagnetic structure in the closed flux region. It is naturally understood that the direction of the poloidal magnetic field (toroidal current) is reversed in reversing the polarity of the bias flux from positive to negative. However, the poloidal current is surprisingly reversed in reversing the magnetic helicity polarity. The direction of the poloidal current is opposite in the each region. The toroidal flow is reversed, but a shear profile of the poloidal flow is not changed significantly. In this configuration, the diamagnetic structure appears in the closed flux region. Thus, not only Jt×Bp but also Jp×Bt force contributes on pressure balance leading to a higher beta. We are studying a more general helicity conservation that constrains the interaction between flows and magnetic fields and momentum transport in the two-fluid framework.

Real space mapping of oxygen vacancy diffusion and electrochemical transformations by hysteretic current reversal curve measurements

DOEpatents

Kalinin, Sergei V.; Balke, Nina; Borisevich, Albina Y.; Jesse, Stephen; Maksymovych, Petro; Kim, Yunseok; Strelcov, Evgheni

2014-06-10

An excitation voltage biases an ionic conducting material sample over a nanoscale grid. The bias sweeps a modulated voltage with increasing maximal amplitudes. A current response is measured at grid locations. Current response reversal curves are mapped over maximal amplitudes of the bias cycles. Reversal curves are averaged over the grid for each bias cycle and mapped over maximal bias amplitudes for each bias cycle. Average reversal curve areas are mapped over maximal amplitudes of the bias cycles. Thresholds are determined for onset and ending of electrochemical activity. A predetermined number of bias sweeps may vary in frequency where each sweep has a constant number of cycles and reversal response curves may indicate ionic diffusion kinetics.

A kinetic Monte Carlo model with improved charge injection model for the photocurrent characteristics of organic solar cells

NASA Astrophysics Data System (ADS)

Kipp, Dylan; Ganesan, Venkat

2013-06-01

We develop a kinetic Monte Carlo model for photocurrent generation in organic solar cells that demonstrates improved agreement with experimental illuminated and dark current-voltage curves. In our model, we introduce a charge injection rate prefactor to correct for the electrode grid-size and electrode charge density biases apparent in the coarse-grained approximation of the electrode as a grid of single occupancy, charge-injecting reservoirs. We use the charge injection rate prefactor to control the portion of dark current attributed to each of four kinds of charge injection. By shifting the dark current between electrode-polymer pairs, we align the injection timescales and expand the applicability of the method to accommodate ohmic energy barriers. We consider the device characteristics of the ITO/PEDOT/PSS:PPDI:PBTT:Al system and demonstrate the manner in which our model captures the device charge densities unique to systems with small injection energy barriers. To elucidate the defining characteristics of our model, we first demonstrate the manner in which charge accumulation and band bending affect the shape and placement of the various current-voltage regimes. We then discuss the influence of various model parameters upon the current-voltage characteristics.

A complete two-phase model of a porous cathode of a PEM fuel cell

NASA Astrophysics Data System (ADS)

Hwang, J. J.

This paper has developed a complete two-phase model of a proton exchange membrane (PEM) fuel cell by considering fluid flow, heat transfer and current simultaneously. In fluid flow, two momentum equations governing separately the gaseous-mixture velocity (u g) and the liquid-water velocity (u w) illustrate the behaviors of the two-phase flow in a porous electrode. Correlations for the capillary pressure and the saturation level connect the above two-fluid transports. In heat transfer, a local thermal non-equilibrium (LTNE) model accounting for intrinsic heat transfer between the reactant fluids and the solid matrices depicts the interactions between the reactant-fluid temperature (T f) and the solid-matrix temperature (T s). The irreversibility heating due to electrochemical reactions, Joule heating arising from Ohmic resistance, and latent heat of water condensation/evaporation are considered in the present non-isothermal model. In current, Ohm's law is applied to yield the conservations in ionic current (i m) and electronic current (i s) in the catalyst layer. The Butler-Volmer correlation describes the relation of the potential difference (overpotential) and the transfer current between the electrolyte (such as Nafion™) and the catalyst (such as Pt/C).

Effect of current compliance and voltage sweep rate on the resistive switching of HfO{sub 2}/ITO/Invar structure as measured by conductive atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, You-Lin, E-mail: ylwu@ncnu.edu.tw; Liao, Chun-Wei; Ling, Jing-Jenn

2014-06-16

The electrical characterization of HfO{sub 2}/ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO{sub 2} surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO{sub 2}/ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates.more » It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.« less

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi; Lee, Fang-Wei

2015-10-21

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy resultsmore » showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.« less

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

NASA Astrophysics Data System (ADS)

Liday, Jozef; Vogrinčič, Peter; Hotový, Ivan; Bonanni, Alberta; Sitter, Helmut; Lalinský, Tibor; Vanko, Gabriel; Řeháček, Vlastimil; Breza, Juraj; Ecke, Gernot

2010-11-01

Electrical characteristics and elemental depth profiles of ohmic contacts to p-GaN using Au/Ni-Mg-Ox metallization have been investigated. The objective was to examine the possibilities of increasing the charge carrier concentration in the surface region of GaN by adding Mg, thus of a p-type dopant into the Au/NiOx metallization structure. For this purpose, a Ni-Mg-Ox layer with a low concentration of Mg was deposited on p-GaN by dc reactive magnetron sputtering. The top Au layer was deposited in a similar way. The fabricated contact structures were annealed in N2. When the Ni-Mg layer in the Au/Ni-Mg-Ox/p-GaN structure was deposited in an atmosphere with a low concentration of oxygen (0.2 at%), the structure exhibited a low resistance ohmic nature. The contact resistance was lower than in the case of a Au/Ni-Ox/p-GaN structure without the Mg dopant in the metallic layer. An increase in the concentration of oxygen in the working atmosphere resulted in higher values of the contact resistance of the Au/Ni-Mg-Ox/p-GaN structure. In our opinion the ohmic nature of the contact structure is related to the existence of a metal/p-NiO/p-GaN scheme. The measured values of the contact resistance in the Au/Ni-Mg-Ox/p-GaN structure in comparison with the Au/Ni-Ox/p-GaN structure are caused by an increased charge carrier concentration in the surface region of p-GaN, which is a consequence of Mg diffusion from the Ni-Mg-Ox layer.

Electron Beam/Optical Hybrid Lithography For The Production Of Gallium Arsenide Monolithic Microwave Integrated Circuits (Mimics)

NASA Astrophysics Data System (ADS)

Nagarajan, Rao M.; Rask, Steven D.

1988-06-01

A hybrid lithography technique is described in which selected levels are fabricated by high resolution direct write electron beam lithography and all other levels are fabricated optically. This technique permits subhalf micron geometries and the site-by-site alignment for each field written by electron beam lithography while still maintaining the high throughput possible with optical lithography. The goal is to improve throughput and reduce overall cost of fabricating MIMIC GaAS chips without compromising device performance. The lithography equipment used for these experiments is the Cambridge Electron beam vector scan system EBMF 6.4 capable of achieving ultra high current densities with a beam of circular cross section and a gaussian intensity profile operated at 20 kev. The optical aligner is a Karl Suss Contact aligner. The flexibility of the Cambridge electron beam system is matched to the less flexible Karl Suss contact aligner. The lithography related factors, such as image placement, exposure and process related analyses, which influence overlay, pattern quality and performance, are discussed. A process chip containing 3.2768mm fields in an eleven by eleven array was used for alignment evaluation on a 3" semi-insulating GaAS wafer. Each test chip contained five optical verniers and four Prometrix registration marks per field along with metal bumps for alignment marks. The process parameters for these chips are identical to those of HEMT/epi-MESFET ohmic contact and gate layer processes. These layers were used to evaluate the overlay accuracy because of their critical alignment and dimensional control requirements. Two cases were examined: (1) Electron beam written gate layers aligned to optically imaged ohmic contact layers and (2) Electron beam written gate layers aligned to electron beam written ohmic contact layers. The effect of substrate charging by the electron beam is also investigated. The resulting peak overlay error accuracies are: (1) Electron beam to optical with t 0.2μm (2 sigma) and (2) Electron beam to electron beam with f 0.lμm (2 sigma). These results suggest that the electron beam/optical hybrid lithography techniques could be used for MIMIC volume production as alignment tolerances required by GaAS chips are met in both cases. These results are discussed in detail.

On-line and real-time diagnosis method for proton membrane fuel cell (PEMFC) stack by the superposition principle

NASA Astrophysics Data System (ADS)

Lee, Young-Hyun; Kim, Jonghyeon; Yoo, Seungyeol

2016-09-01

The critical cell voltage drop in a stack can be followed by stack defect. A method of detecting defective cell is the cell voltage monitoring. The other methods are based on the nonlinear frequency response. In this paper, the superposition principle for the diagnosis of PEMFC stack is introduced. If critical cell voltage drops exist, the stack behaves as a nonlinear system. This nonlinearity can explicitly appear in the ohmic overpotential region of a voltage-current curve. To detect the critical cell voltage drop, a stack is excited by two input direct test-currents which have smaller amplitude than an operating stack current and have an equal distance value from the operating current. If the difference between one voltage excited by a test current and the voltage excited by a load current is not equal to the difference between the other voltage response and the voltage excited by the load current, the stack system acts as a nonlinear system. This means that there is a critical cell voltage drop. The deviation from the value zero of the difference reflects the grade of the system nonlinearity. A simulation model for the stack diagnosis is developed based on the SPP, and experimentally validated.

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Fan, Shuang; Chen, Yong-He; Kang, Di; Zhang, Jian-Kun; Wang, Chong; Mo, Jiang-Hui; Li, Liang; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-02-01

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor (HEMT) becomes one of the most important reliability issues with the downscaling of feature size. In this paper, the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K. Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current. By comparing the experimental data with the numerical transport models, it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current. However, good agreement is found between the experimental data and the two-dimensional variable range hopping (2D-VRH) model. Therefore, it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer. Moreover, the activation energy of surface leakage current is extracted, which is around 0.083 eV. Finally, the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied. It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV, which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206), the New Experiment Development Funds for Xidian University, China (Grant No. SY1213), the 111 Project, China (Grant No. B12026), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. K5051325002).

Work function measurements of copper nanoparticle intercalated polyaniline nanocomposite thin films

NASA Astrophysics Data System (ADS)

Patil, U. V.; Ramgir, Niranjan S.; Bhogale, A.; Debnath, A. K.; Muthe, K. P.; Gadkari, S. C.; Kothari, D. C.

2017-05-01

The nature of contact between the electrode and the sensing material plays a crucial role in governing the sensing mechanism. Thin films of polyaniline (PANI) and copper-polyaniline nanocomposite (NC) have been deposited at room temperatures by in-situ oxidative polymerization of aniline in the presence of Cu nanoparticles. For sensing applications a thin film Au (gold) ˜100 nm is deposited and used as a conducting electrode. To understand the nature of contact (i.e., ohmic or Schottky) the work function of the conducting polyaniline and nanocomposite films were measured using Kelvin Probe method. I-V characteristics of PANI and NC films investigated at room temperatures further corroborates and confirms the formation of Ohmic contact as evident from work function measurements.