Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, D.C.; Marcus, R.K.; Donohue, D.L.; Lewis, T.A.

1994-06-28

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components. 11 figures.

Radio-frequency powered glow discharge device and method with high voltage interface

DOEpatents

Duckworth, Douglas C.; Marcus, R. Kenneth; Donohue, David L.; Lewis, Trousdale A.

1994-01-01

A high voltage accelerating potential, which is supplied by a high voltage direct current power supply, is applied to the electrically conducting interior wall of an RF powered glow discharge cell. The RF power supply desirably is electrically grounded, and the conductor carrying the RF power to the sample held by the probe is desirably shielded completely excepting only the conductor's terminal point of contact with the sample. The high voltage DC accelerating potential is not supplied to the sample. A high voltage capacitance is electrically connected in series between the sample on the one hand and the RF power supply and an impedance matching network on the other hand. The high voltage capacitance isolates the high DC voltage from the RF electronics, while the RF potential is passed across the high voltage capacitance to the plasma. An inductor protects at least the RF power supply, and desirably the impedance matching network as well, from a short that might occur across the high voltage capacitance. The discharge cell and the probe which holds the sample are configured and disposed to prevent the probe's components, which are maintained at ground potential, from bridging between the relatively low vacuum region in communication with the glow discharge maintained within the cell on the one hand, and the relatively high vacuum region surrounding the probe and cell on the other hand. The probe and cell also are configured and disposed to prevent the probe's components from electrically shorting the cell's components.

Interaction between pulsed discharge and radio frequency discharge burst at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jie; College of Science, Donghua University, Shanghai 201620; Guo, Ying

The atmospheric pressure glow discharges (APGD) with dual excitations in terms of pulsed voltage and pulse-modulation radio frequency (rf) power are studied experimentally between two parallel plates electrodes. Pulse-modulation applied in rf APGD temporally separates the discharge into repetitive discharge bursts, between which the high voltage pulses are introduced to ignite sub-microsecond pulsed discharge. The discharge characteristics and spatio-temporal evolution are investigated by means of current voltage characteristics and time resolved imaging, which suggests that the introduced pulsed discharge assists the ignition of rf discharge burst and reduces the maintain voltage of rf discharge burst. Furtherly, the time instant ofmore » pulsed discharge between rf discharge bursts is manipulated to study the ignition dynamics of rf discharge burst.« less

Active damping of the e-p instability at the Los Alamos Proton Storage Ring

NASA Astrophysics Data System (ADS)

Macek, R. J.; Assadi, S.; Byrd, J. M.; Deibele, C. E.; Henderson, S. D.; Lee, S. Y.; McCrady, R. C.; Pivi, M. F. T.; Plum, M. A.; Walbridge, S. B.; Zaugg, T. J.

2007-12-01

A prototype of an analog, transverse (vertical) feedback system for active damping of the two-stream (e-p) instability has been developed and successfully tested at the Los Alamos Proton Storage Ring (PSR). This system was able to improve the instability threshold by approximately 30% (as measured by the change in RF buncher voltage at instability threshold). The feedback system configuration, setup procedures, and optimization of performance are described. Results of several experimental tests of system performance are presented including observations of instability threshold improvement and grow-damp experiments, which yield estimates of instability growth and damping rates. A major effort was undertaken to identify and study several factors limiting system performance. Evidence obtained from these tests suggests that performance of the prototype was limited by higher instability growth rates arising from beam leakage into the gap at lower RF buncher voltage and the onset of instability in the horizontal plane, which had no feedback.

RF Simulation of the 187 MHz CW Photo-RF Gun Cavity at LBNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Tong-Ming

2008-12-01

A 187 MHz normal conducting Photo-RF gun cavity is designed for the next generation light sources. The cavity is capable of operating in CW mode. As high as 750 kV gap voltage can be achieved with a 20 MV/m acceleration gradient. The original cavity optimization is conducted using Superfish code (2D) by Staples. 104 vacuum pumping slots are added and evenly spaced over the cavity equator in order to achieve better than 10 -10-Tor of vacuum. Two loop couplers will be used to feed RF power into the cavity. 3D simulations are necessary to study effects from the vacuum pumpingmore » slots, couplers and possible multipactoring. The cavity geometry is optimized to minimize the power density and avoid multipactoring at operating field level. The vacuum slot dimensions are carefully chosen in consideration of both the vacuum conduction, local power density enhancement and the power attenuation at the getter pumps. This technical note gives a summary of 3D RF simulation results, multipactoring simulations (2D) and preliminary electromagnetic-thermal analysis using ANSYS code.« less

Ion manipulation device to prevent loss of ions

DOEpatents

Tolmachev, Aleksey; Smith, Richard D; Ibrahim, Yehia M; Anderson, Gordon A; Baker, Erin M

2015-03-03

An ion manipulation method and device to prevent loss of ions is disclosed. The device includes a pair of surfaces. An inner array of electrodes is coupled to the surfaces. A RF voltage and a DC voltage are alternately applied to the inner array of electrodes. The applied RF voltage is alternately positive and negative so that immediately adjacent or nearest neighbor RF applied electrodes are supplied with RF signals that are approximately 180 degrees out of phase.

Contribution of the backstreaming ions to the Self-Magnetic pinch (SMP) diode current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazarakis, Michael G.; Cuneo, Michael E.; Fournier, Sean D.

2016-08-08

Summary form only given. The results presented here were obtained with an SMP diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulses of six 1.3 MV inductively insulated cavities. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target to the diode beam current, and second to try to evaluate the energy of those ions and hence the actual Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage addermore » (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. The accelerating voltage quoted in the literature is from estimates based on measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high Z metals in order to produce copious and energetic flash x-rays. The backstreaming currents are a strong fraction of the anode materials and their stage of cleanness and gas adsorption. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatments, such as heating to very high temperatures with DC and pulsed current, with RF plasma cleaning and with both plasma cleaning and heating. Finally, we have also evaluated the A-K gap voltage by ion filtering techniques.« less

Low voltage driven RF MEMS capacitive switch using reinforcement for reduced buckling

NASA Astrophysics Data System (ADS)

Bansal, Deepak; Bajpai, Anuroop; Kumar, Prem; Kaur, Maninder; Kumar, Amit; Chandran, Achu; Rangra, Kamaljit

2017-02-01

Variation in actuation voltage for RF MEMS switches is observed as a result of stress-generated buckling of MEMS structures. Large voltage driven RF-MEMS switches are a major concern in space bound communication applications. In this paper, we propose a low voltage driven RF MEMS capacitive switch with the introduction of perforations and reinforcement. The performance of the fabricated switch is compared with conventional capacitive RF MEMS switches. The pull-in voltage of the switch is reduced from 70 V to 16.2 V and the magnitude of deformation is reduced from 8 µm to 1 µm. The design of the reinforcement frame enhances the structural stiffness by 46 % without affecting the high frequency response of the switch. The measured isolation and insertion loss of the reinforced switch is more than 20 dB and 0.4 dB over the X band range.

An RF-induced voltage sensor for investigating pacemaker safety in MRI.

PubMed

Barbier, Thérèse; Piumatti, Roberto; Hecker, Bertrand; Odille, Freddy; Felblinger, Jacques; Pasquier, Cédric

2014-12-01

Magnetic resonance imaging (MRI) is inadvisable for patients with pacemakers, as radiofrequency (RF) voltages induced in the pacemaker leads may cause the device to malfunction. Our goal is to develop a sensor to measure such RF-induced voltages during MRI safety tests. A sensor was designed (16.6 cm(2)) for measuring voltages at the connection between the pacemaker lead and its case. The induced voltage is demodulated, digitized, and transferred by optical fibres. The sensor was calibrated on the bench using RF pulses of known amplitude and duration. Then the sensor was tested during MRI scanning at 1.5 T in a saline gel filled phantom. Bench tests showed measurement errors below 5% with a (-40 V; +40 V) range, a precision of 0.06 V, and a temporal resolution of 24.2 μs. In MRI tests, variability in the measured voltages was below 3.7% for 996 measurements with different sensors and RF exposure. Coupling between the sensor and the MRI electromagnetic environment was estimated with a second sensor connected and was below 6.2%. For a typical clinical MRI sequence, voltages around ten Vp were detected. We have built an accurate and reproducible tool for measuring RF-induced voltages in pacemaker leads during MR safety investigations. The sensor might also be used with other conducting cables including those used for electrocardiography and neurostimulation.

APPARATUS FOR REGULATING HIGH VOLTAGE

DOEpatents

Morrison, K.G.

1951-03-20

This patent describes a high-voltage regulator of the r-f type wherein the modulation of the r-f voltage is accomplished at a high level, resulting in good stabilization over a large range of load conditions.

Booster Synchrotron RF System Upgrade for SPEAR3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Sanghyun; /SLAC; Corbett, Jeff

2012-07-06

Recent progress at the SPEAR3 includes the increase in stored current from 100 mA to 200 mA and top-off injection to allow beamlines to stay open during injection. Presently the booster injects 3.0 GeV beam to SPEAR3 three times a day. The stored beam decays to about 150 mA between the injections. The growing user demands are to increase the stored current to the design value of 500 mA, and to maintain it at a constant value within a percent or so. To achieve this goal the booster must inject once every few minutes. For improved injection efficiency, all RFmore » systems at the linac, booster and SPEAR3 need to be phase-locked. The present booster RF system is basically a copy of the SPEAR2 RF system with 358.5 MHz and 40 kW peak RF power driving a 5-cell RF cavity for 1.0 MV gap voltage. These requirements entail a booster RF system upgrade to a scaled down version of the SPEAR3 RF system of 476.3 MHz with 1.2 MW cw klystron output power capabilities. We will analyze each subsystem option for their merits within budgetary and geometric space constraints. A substantial portion of the system will come from the decommissioned PEP-II RF stations.« less

Ion funnel device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Chen, Tsung-Chi; Harrer, Marques B.

2017-11-21

An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second direction. The device includes an RF voltage source and a DC voltage source. A RF voltage with a superimposed DC voltage gradient is applied to the first pair of electrodes, and a DC voltage gradient is applied to the second pair of electrodes.

Challenges in Radiofrequency Pasteurization of Shell Eggs: Coagulation Rings.

PubMed

Lau, Soon Kiat; Thippareddi, Harshavardhan; Jones, David; Negahban, Mehrdad; Subbiah, Jeyamkondan

2016-10-01

A total of 50 different configurations of simple radiofrequency (RF) heating at 27.12 MHz of a shell egg were simulated using a finite element model with the purpose of pasteurizing the egg. Temperature-dependent thermal and dielectric properties of the yolk, albumen, and shell were measured, fitted, and introduced into the model. A regression equation that relates the top electrode voltage to the gap between the electrodes and vertical position of the egg was developed. Simulation and experimental results had good agreement in terms of temperature deviation (root mean squared error ranged from 0.35 °C to 0.48 °C) and both results demonstrated the development of a "coagulation ring" around the air cell. The focused heating near the air cell of the egg prevented pasteurization of the egg due to its impact on quality (coagulation). Analysis of the electric field patterns offered a perspective on how nonuniform RF heating could occur in heterogeneous food products. The results can be used to guide development of RF heating for heterogeneous food products and further development of RF pasteurization of eggs. © 2016 Institute of Food Technologists®.

Breakdown Characteristics of a Radio-Frequency Atmospheric Glow Discharge

NASA Astrophysics Data System (ADS)

Shi, Jianjun; Kong, Michael

2004-09-01

Radio-frequency (rf) atmospheric pressure glow discharges (APGD) are a capacitive nonthermal plasma with distinct advantage of low gas temperature and long-term stability. In practice their ignition is challenging particularly when they are generated at large electrode gaps. To this end, this contribution reports a one-dimensional fluid simulation of gas breakdown over a large pressure range of 100 - 760 Torr so that key physical processes can be understood in the ignition phase of rf APGD. Our model is an electron-hybrid model in which electrons are treated kinetically and all other plasma species are treated hydrodynamically. Computational results suggest that as the pressure-distance product increases from 25 Torr cm upwards the breakdown voltage increases in a way that resembles the right-hand-side branch of a Pachen curve. Importance of secondary electron emission is shown as well as its dependence on gas pressure even though identical electrode material is assumed. With these factors considered, excellent agreement with experimental data is achieved. Finally frequency dependence of the breakdown voltage is calculated and again found to agree with experimental data.

Static current-voltage characteristics for radio-frequency induction discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Budyansky, A.; Zykov, A.

1995-12-31

The aim of this work was to obtain experimentally such characteristic of Radio-Frequency Induction Discharge (RFID) that can play the role of its current-voltage characteristic (CVC) and to explain the nature of current and voltage jumps arising in RF coils at exciting of discharge. Experiments were made in quartz 5.5, 11, 20 cm diam tubes with outer RF coil at pressures 10--100 mTorr, at frequency 13.56 MHz and discharge power to 500 W. In case of outer coil as analogue of discharge voltage it`s convenient to use the value of the RF voltage U{sub R}, induced around outer perimeter ofmore » discharge tube. It is evident that current and voltage jumps arising at exciting of discharge are due to low output resistance of standard generators and negative slope of initial part of CVC. Three sets of such dependencies for different pressures were obtained for each diameter of tubes. The influence of different metal electrodes placed into discharge volume on CVC`s shape has been studied also. Experimental results can explain the behavior of HFI discharge as a load of RF generator and give data for calculation of RF circuit.« less

Estimation of intrinsic and extrinsic capacitances of graphene self-switching diode using conformal mapping technique

NASA Astrophysics Data System (ADS)

Singh, Arun K.; Auton, Gregory; Hill, Ernie; Song, Aimin

2018-07-01

Due to a very high carrier concentration and low band gap, graphene based self-switching diodes do not demonstrate a very high rectification ratio. Despite that, it takes the advantage of graphene’s high carrier mobility and has been shown to work at very high microwave frequencies. However, the AC component of these devices is hidden in the very linear current–voltage characteristics. Here, we extract and quantitatively study the device capacitance that determines the device nonlinearity by implementing a conformal mapping technique. The estimated value of the nonlinear component or curvature coefficient from DC results based on Shichman–Hodges model predicts the rectified output voltage, which is in good agreement with the experimental RF results.

Progress Toward a Gigawatt-Class Annular Beam Klystron with a Thermionic Electron Gun

NASA Astrophysics Data System (ADS)

Fazio, M.; Carlsten, B.; Farnham, J.; Habiger, K.; Haynes, W.; Myers, J.; Nelson, E.; Smith, J.; Arfin, B.; Haase, A.

2002-08-01

In an effort to reach the gigawatt power level in the microsecond pulse length regime Los Alamos, in collaboration with SLAC, is developing an annular beam klystron (ABK) with a thermionic electron gun. We hope to address the causes of pulse shortening in very high peak power tubes by building a "hard-vacuum" tube in the 10-10 Torr range with a thermionic electron gun producing a constant impedance electron-beam. The ABK has been designed to operate at 5 Hz pulse repetition frequency to allow for RF conditioning. The electron gun has a magnetron injection gun configuration and uses a dispenser cathode running at 1100 degC to produce a 4 kA electron beam at 800 kV. The cathode is designed to run in the temperature-limited mode to help maintain beam stability in the gun. The beam-stick consisting of the electron gun, an input cavity, an idler cavity, and drift tube, and the collector has been designed collaboratively, fabricated at SLAC, then shipped to Los Alamos for testing. On the test stand at Los Alamos a low voltage emission test was performed, but unfortunately as we prepared for high voltage testing a problem with the cathode heater was encountered that prevented the cathode from reaching a high enough temperature for electron emission. A post-mortem examination will be done shortly to determine the exact cause of the heater failure. The RF design has been proceeding and is almost complete. The output cavity presents a challenging design problem in trying to efficiently extract energy from the low impedance beam while maintaining a gap voltage low enough to avoid breakdown and a Q high enough to maintain mode purity. In the next iteration, the ABK will have a new cathode assembly installed along with the remainder of the RF circuit. This paper will discuss the electron gun and the design of the RF circuit along with a report on the status of the work.

Extended linear ion trap frequency standard apparatus

NASA Technical Reports Server (NTRS)

Prestage, John D. (Inventor)

1995-01-01

A linear ion trap for frequency standard applications is provided with a plurality of trapping rods equally spaced and applied quadruple rf voltages for radial confinement of atomic ions and biased level pins at each end for axial confinement of the ions. The trapping rods are divided into two linear ion trap regions by a gap in each rod in a common radial plane to provide dc discontinuity, thus dc isolating one region from the other. A first region for ion-loading and preparation fluorescence is biased with a dc voltage to transport ions into a second region for resonance frequency comparison with a local oscillator derived frequency while the second region is held at zero voltage. The dc bias voltage of the regions is reversed for transporting the ions back into the first region for fluorescence measurement. The dual mode cycle is repeated continuously for comparison and feedback control of the local oscillator derived frequency. Only the second region requires magnetic shielding for the resonance function which is sensitive to any ambient magnetic fields.

High-frequency graphene voltage amplifier.

PubMed

Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

2011-09-14

While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

Design and implementation of a RF powering circuit for RFID tags or other batteryless embedded devices.

PubMed

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-08-13

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm². The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips.

Design and Implementation of a RF Powering Circuit for RFID Tags or Other Batteryless Embedded Devices

PubMed Central

Liu, Dongsheng; Wang, Rencai; Yao, Ke; Zou, Xuecheng; Guo, Liang

2014-01-01

A RF powering circuit used in radio-frequency identification (RFID) tags and other batteryless embedded devices is presented in this paper. The RF powering circuit harvests energy from electromagnetic waves and converts the RF energy to a stable voltage source. Analysis of a NMOS gate-cross connected bridge rectifier is conducted to demonstrate relationship between device sizes and power conversion efficiency (PCE) of the rectifier. A rectifier with 38.54% PCE under normal working conditions is designed. Moreover, a stable voltage regulator with a temperature and voltage optimizing strategy including adoption of a combination resistor is developed, which is able to accommodate a large input range of 4 V to 12 V and be immune to temperature variations. Latch-up prevention and noise isolation methods in layout design are also presented. Designed with the HJTC 0.25 μm process, this regulator achieves 0.04 mV/°C temperature rejection ratio (TRR) and 2.5 mV/V voltage rejection ratio (VRR). The RF powering circuit is also fabricated in the HJTC 0.25 μm process. The area of the RF powering circuit is 0.23 × 0.24 mm2. The RF powering circuit is successfully integrated with ISO/IEC 15693-compatible and ISO/IEC 14443-compatible RFID tag chips. PMID:25123466

History and Technology Developments of Radio Frequency (RF) Systems for Particle Accelerators

NASA Astrophysics Data System (ADS)

Nassiri, A.; Chase, B.; Craievich, P.; Fabris, A.; Frischholz, H.; Jacob, J.; Jensen, E.; Jensen, M.; Kustom, R.; Pasquinelli, R.

2016-04-01

This article attempts to give a historical account and review of technological developments and innovations in radio frequency (RF) systems for particle accelerators. The evolution from electrostatic field to the use of RF voltage suggested by R. Wideröe made it possible to overcome the shortcomings of electrostatic accelerators, which limited the maximum achievable electric field due to voltage breakdown. After an introduction, we will provide reviews of technological developments of RF systems for particle accelerators.

Radio frequency cavity analysis, measurement, and calibration of absolute Dee voltage for K-500 superconducting cyclotron at VECC, Kolkata

DOE Office of Scientific and Technical Information (OSTI.GOV)

Som, Sumit; Seth, Sudeshna; Mandal, Aditya

2013-02-15

Variable Energy Cyclotron Centre has commissioned a K-500 superconducting cyclotron for various types of nuclear physics experiments. The 3-phase radio-frequency system of superconducting cyclotron has been developed in the frequency range 9-27 MHz with amplitude and phase stability of 100 ppm and {+-}0.2{sup 0}, respectively. The analysis of the RF cavity has been carried out using 3D Computer Simulation Technology (CST) Microwave Studio code and various RF parameters and accelerating voltages ('Dee' voltage) are calculated from simulation. During the RF system commissioning, measurement of different RF parameters has been done and absolute Dee voltage has been calibrated using a CdTemore » X-ray detector along with its accessories and known X-ray source. The present paper discusses about the measured data and the simulation result.« less

Contribution of the backstreaming ions to the self-magnetic pinch (SMP) diode current

NASA Astrophysics Data System (ADS)

Mazarakis, Michael G.; Bennett, Nichelle; Cuneo, Michael E.; Fournier, Sean D.; Johnston, Mark D.; Kiefer, Mark L.; Leckbee, Joshua J.; Nielsen, Dan S.; Oliver, Bryan V.; Sceiford, Matthew E.; Simpson, Sean C.; Renk, Timothy J.; Ruiz, Carlos L.; Webb, Timothy J.; Ziska, Derek; Droemer, Darryl W.; Gignac, Raymond E.; Obregon, Robert J.; Wilkins, Frank L.; Welch, Dale R.

2018-04-01

The results presented here were obtained with a self-magnetic pinch (SMP) diode mounted at the front high voltage end of the RITS accelerator. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The RITS driver together with the SMP diode has produced x-ray spots of the order of 1 mm in diameter and doses adequate for the radiographic imaging of high area density objects. Although, through the years, a number of different types of radiographic electron diodes have been utilized with SABER, HERMES III and RITS accelerators, the SMP diode appears to be the most successful and simplest diode for the radiographic investigation of various objects. Our experiments had two objectives: first to measure the contribution of the back-streaming ion currents emitted from the anode target and second to try to evaluate the energy of those ions and hence the Anode-Cathode (A-K) gap actual voltage. In any very high voltage inductive voltage adder utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the A-K gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (˜1 cm) and the diode region very hostile. The accelerating voltage quoted in the literature is from estimates based on the measurements of the anode and cathode currents of the MITL far upstream from the diode and utilizing the para-potential flow theories and inductive corrections. Thus, it would be interesting to have another independent measurement to evaluate the A-K voltage. The diode's anode is made of a number of high-Z metals in order to produce copious and energetic flash x-rays. It was established experimentally that the back-streaming ion currents are a strong function of the anode materials and their stage of cleanness. We have measured the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip for various diode configurations and different techniques of target cleaning treatment: namely, heating at very high temperatures with DC and pulsed current, with RF plasma cleaning, and with both plasma cleaning and heating. We have also evaluated the A-K gap voltage by energy filtering technique. Experimental results in comparison with LSP simulations are presented.

Shrinkable sleeve eliminates shielding gap in RF cable

NASA Technical Reports Server (NTRS)

1965-01-01

RF shielding gap between an RF cable and a multipin connector is eliminated by a sleeve assembly installed between the connector and the terminated portion of the shielding. The assembly is enclosed in a heat-shrinkable plastic sleeve which completes the continuous RF shield.

Design of DC-contact RF MEMS switch with temperature stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Junfeng; Nanjing Electronic Devices Institute, Nanjing, 210016; Li, Zhiqun, E-mail: zhiqunli@seu.edu.cn

In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C formore » 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.« less

Broadband Electric-Field Sensor Array Technology

DTIC Science & Technology

2012-08-05

output voltage modulation on the output RF transmission line (impedance Z0 = 50 Ω) via a transimpedance amplifier connected to the photodiode. The...voltage amplitude is where G is the conversion gain of the photodiode and amplifier . The RF power detected by an RF receiver with a matched impedance...wave (CW) tunable near-infrared laser amplified by an erbium-doped fiber amplifier (EDFA) is guided by single-mode optical fiber and coupled into

Development and study of charge sensors for fast charge detection in quantum dots

NASA Astrophysics Data System (ADS)

Thalakulam, Madhu

Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity. We have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime. A study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.

Development of a helicon ion source: Simulations and preliminary experiments.

PubMed

Afsharmanesh, M; Habibi, M

2018-03-01

In the present context, the extraction system of a helicon ion source has been simulated and constructed. Results of the ion source commissioning at up to 20 kV are presented as well as simulations of an ion beam extraction system. Argon current of more than 200 μA at up to 20 kV is extracted and is characterized with a Faraday cup and beam profile monitoring grid. By changing different ion source parameters such as RF power, extraction voltage, and working pressure, an ion beam with current distribution exhibiting a central core has been detected. Jump transition of ion beam current emerges at the RF power near to 700 W, which reveals that the helicon mode excitation has reached this power. Furthermore, measuring the emission line intensity of Ar ii at 434.8 nm is the other way we have used for demonstrating the mode transition from inductively coupled plasma to helicon. Due to asymmetrical longitudinal power absorption of a half-helix helicon antenna, it is used for the ion source development. The modeling of the plasma part of the ion source has been carried out using a code, HELIC. Simulations are carried out by taking into account a Gaussian radial plasma density profile and for plasma densities in range of 10 18 -10 19 m -3 . Power absorption spectrum and the excited helicon mode number are obtained. Longitudinal RF power absorption for two different antenna positions is compared. Our results indicate that positioning the antenna near to the plasma electrode is desirable for the ion beam extraction. The simulation of the extraction system was performed with the ion optical code IBSimu, making it the first helicon ion source extraction designed with the code. Ion beam emittance and Twiss parameters of the ellipse emittance are calculated at different iterations and mesh sizes, and the best values of the mesh size and iteration number have been obtained for the calculations. The simulated ion beam extraction system has been evaluated using optimized parameters such as the gap distance between electrodes, electrodes aperture, and extraction voltage. The gap distance, ground electrode aperture, and extraction voltage have been changed between 3 and 9 mm, 2-6.5 mm, and 10-35 kV in the simulations, respectively.

Development of a helicon ion source: Simulations and preliminary experiments

NASA Astrophysics Data System (ADS)

Afsharmanesh, M.; Habibi, M.

2018-03-01

In the present context, the extraction system of a helicon ion source has been simulated and constructed. Results of the ion source commissioning at up to 20 kV are presented as well as simulations of an ion beam extraction system. Argon current of more than 200 μA at up to 20 kV is extracted and is characterized with a Faraday cup and beam profile monitoring grid. By changing different ion source parameters such as RF power, extraction voltage, and working pressure, an ion beam with current distribution exhibiting a central core has been detected. Jump transition of ion beam current emerges at the RF power near to 700 W, which reveals that the helicon mode excitation has reached this power. Furthermore, measuring the emission line intensity of Ar ii at 434.8 nm is the other way we have used for demonstrating the mode transition from inductively coupled plasma to helicon. Due to asymmetrical longitudinal power absorption of a half-helix helicon antenna, it is used for the ion source development. The modeling of the plasma part of the ion source has been carried out using a code, HELIC. Simulations are carried out by taking into account a Gaussian radial plasma density profile and for plasma densities in range of 1018-1019 m-3. Power absorption spectrum and the excited helicon mode number are obtained. Longitudinal RF power absorption for two different antenna positions is compared. Our results indicate that positioning the antenna near to the plasma electrode is desirable for the ion beam extraction. The simulation of the extraction system was performed with the ion optical code IBSimu, making it the first helicon ion source extraction designed with the code. Ion beam emittance and Twiss parameters of the ellipse emittance are calculated at different iterations and mesh sizes, and the best values of the mesh size and iteration number have been obtained for the calculations. The simulated ion beam extraction system has been evaluated using optimized parameters such as the gap distance between electrodes, electrodes aperture, and extraction voltage. The gap distance, ground electrode aperture, and extraction voltage have been changed between 3 and 9 mm, 2-6.5 mm, and 10-35 kV in the simulations, respectively.

Studies and optimization of Pohang Light Source-II superconducting radio frequency system at stable top-up operation with beam current of 400 mA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joo, Youngdo, E-mail: Ydjoo77@postech.ac.kr; Yu, Inha; Park, Insoo

After three years of upgrading work, the Pohang Light Source-II (PLS-II) is now successfully operating. The final quantitative goal of PLS-II is a top-up user-service operation with beam current of 400 mA to be completed by the end of 2014. During the beam store test up to 400 mA in the storage ring (SR), it was observed that the vacuum pressure around the radio frequency (RF) window of the superconducting cavity rapidly increases over the interlock level limiting the availability of the maximum beam current storing. Although available beam current is enhanced by setting a higher RF accelerating voltage, it is bettermore » to keep the RF accelerating voltage as low as possible in the long time top-up operation. We investigated the cause of the window vacuum pressure increment by studying the changes in the electric field distribution at the superconducting cavity and waveguide according to the beam current. In our simulation, an equivalent physical modeling was developed using a finite-difference time-domain code. The simulation revealed that the electric field amplitude at the RF window is exponentially increased as the beam current increases, thus this high electric field amplitude causes a RF breakdown at the RF window, which comes with the rapid increase of window vacuum pressure. The RF accelerating voltage of PLS-II RF system was set to 4.95 MV, which was estimated using the maximum available beam current that works as a function of RF voltage, and the top-up operation test with the beam current of 400 mA was successfully carried out.« less

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

NASA Astrophysics Data System (ADS)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

RF-DC converter for HF RFID sensing applications powered by a near-field loop antenna

NASA Astrophysics Data System (ADS)

Colella, R.; Pasca, M.; Catarinucci, L.; Tarricone, L.; D'Amico, S.

2016-07-01

In this paper, an RF-DC converter operating at 13.56 MHz (HF radio frequency identification (RFID) frequency band) is presented. Its architecture provides RF to load isolation, reducing the losses due to the reverse saturation current and improving the sensitivity. Fed by a loop antenna, the RF-DC converter is made by a Dickson's RF-DC rectifier and an additional Pelliconi's charge pump driven by a fully integrated 50 kHz ring oscillator realized using an application-specific integrated circuit (ASIC). The input RF signal from the reader is converted to DC supply voltage and stored on a 1 μF capacitor. Mathematical model of the converter is developed and verified through measurements. Silicon prototypes of the ASIC have been realized in 350 nm complementary metal-oxide semiconductor technology. Measurements have been done on 10 different samples showing an output voltage in the range of 0.5 V-3.11 V in correspondence of an RF input signal power in the range of -19 dBm-0 dBm. These output voltage levels are suitable to power HF RFID sensing platforms and sensor nodes of body sensor networks.

Numerical Simulation of Liquid Metal RF MEMS Switch Based on EWOD

NASA Astrophysics Data System (ADS)

Liu, Tingting; Gao, Yang; Yang, Tao; Guo, Huihui

2018-03-01

Conventional RF MEMS switches rely on metal-to-dielectric or metal-to-metal contacts. Some problems in the “solid-solid” contact, such as contact degradation, signal bounce and poor reliability, can be solved by using “liquid-solid” contact. The RF MEMS switch based on liquid metal is characterized by small contact resistance, no moving parts, high reliability and long life. Using electrowetting-on-dielectric (EWOD) way to control the movement of liquid metal in the RF MEMS switch, to achieve the “on” and “off” of the switch. In this paper, the electrical characteristics and RF characteristics of RF MEMS switches are simulated by fluid mechanics software FLUENT and electromagnetic simulation software HFSS. The effects of driving voltage, switching time, dielectric layer, hydrophobic layer material and thickness, switching channel height on the RF characteristics are studied. The results show that to increase the external voltage to the threshold voltage of 58V, the liquid metal began to move, and the switching time from “off” state to “on” state is 16ms. In the 0~20GHz frequency range, the switch insertion loss is less than 0.28dB, isolation is better than 23.32dB.

Resonance of magnetization excited by voltage in magnetoelectric heterostructures

NASA Astrophysics Data System (ADS)

Yu, Guoliang; Zhang, Huaiwu; Li, Yuanxun; Li, Jie; Zhang, Dainan; Sun, Nian

2018-04-01

Manipulation of magnetization dynamics is critical for spin-based devices. Voltage driven magnetization resonance is promising for realizing low-power information processing systems. Here, we show through Finite Element Method (FEM) simulations that magnetization resonance in nanoscale magnetic elements can be generated by a radio frequency (rf) voltage via the converse magnetoelectric (ME) effect. The magnetization dynamics induced by voltage in a ME heterostructures is simulated by taking into account the magnetoelastic and piezoelectric coupling mechanisms among magnetization, strain and voltage. The frequency of the excited magnetization resonance is equal to the driving rf voltage frequency. The proposed voltage driven magnetization resonance excitation mechanism opens a way toward energy-efficient spin based device applications.

DLC Film Formation Technologies by Applying Pulse Voltage Coupled with RF Voltage to Complicated 3-dimensional Substrates and Industrial Application

NASA Astrophysics Data System (ADS)

Suzuki, Yasuo

A uniform plasma-based ion implantation and DLC film formation technologies on the surface of complicated 3-dimensional substrates have been developed by applying pulse voltage coupled with RF voltage to the substrates such as plastics, rubber as well as metals with the similar deposition rate. These technologies are widely applicable to both ion implantation and DLC film formation onto the automobile parts, mechanical parts and metal molds. A problem to be solved is reducing cost. The deposition rate of DLC films is expected to increase to around 10μm/hr, which is ten times larger than that of the conventional method, by hybridizing the ICP (Induction Coupling Plasma) with a plus-minus voltage source. This epoch-making technology will be able to substitute for the electro-plating method in the near future. In this paper, the DLC film formation technology by applying both RF and pulse voltage, its applications and its prospect are presented.

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

PubMed

Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K Y; Chu, Paul K

2008-04-01

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, C. M.; Bhat, S.

Increasing proton beam power on neutrino production targets is one of the major goals of the Fermilab long term accelerator programs. In this effort, the Fermilab 8 GeV Booster synchrotron plays a critical role for at least the next two decades. Therefore, understanding the Booster in great detail is important as we continue to improve its performance. For example, it is important to know accurately the available RF power in the Booster by carrying out beam-based measurements in order to specify the needed upgrades to the Booster RF system. Since the Booster magnetic field is changing continuously measuring/calibrating the RFmore » voltage is not a trivial task. Here, we present a beam based method for the RF voltage measurements. Data analysis is carried out using computer programs developed in Python and MATLAB. The method presented here is applicable to any RCS which do not have flat-bottom and flat-top in the acceleration magnetic ramps. We have also carried out longitudinal beam tomography at injection and extraction energies with the data used for RF voltage measurements. Beam based RF voltage measurements and beam tomography were never done before for the Fermilab Booster. The results from these investigations will be very useful in future intensity upgrades.« less

Multi-beam linear accelerator EVT

NASA Astrophysics Data System (ADS)

Teryaev, Vladimir E.; Kazakov, Sergey Yu.; Hirshfield, Jay L.

2016-09-01

A novel electron multi-beam accelerator is presented. The accelerator, short-named EVT (Electron Voltage Transformer) belongs to the class of two-beam accelerators. It combines an RF generator and essentially an accelerator within the same vacuum envelope. Drive beam-lets and an accelerated beam are modulated in RF modulators and then bunches pass into an accelerating structure, comprising uncoupled with each other and inductive tuned cavities, where the energy transfer from the drive beams to the accelerated beam occurs. A phasing of bunches is solved by choice correspond distances between gaps of the adjacent cavities. Preliminary results of numerical simulations and the initial specification of EVT operating in S-band, with a 60 kV gun and generating a 2.7 A, 1.1 MV beam at its output is presented. A relatively high efficiency of 67% and high design average power suggest that EVT can find its use in industrial applications.

Multi-beam linear accelerator EVT

DOE PAGES

Teryaev, Vladimir E.; Kazakov, Sergey Yu.; Hirshfield, Jay L.

2016-03-29

A novel electron multi-beam accelerator is presented. The accelerator, short-named EVT (Electron Voltage Transformer) belongs to the class of two-beam accelerators. It combines an RF generator and essentially an accelerator within the same vacuum envelope. Drive beam-lets and an accelerated beam are modulated in RF modulators and then bunches pass into an accelerating structure, comprising uncoupled with each other and inductive tuned cavities, where the energy transfer from the drive beams to the accelerated beam occurs. A phasing of bunches is solved by choice correspond distances between gaps of the adjacent cavities. Preliminary results of numerical simulations and the initialmore » specification of EVT operating in S-band, with a 60 kV gun and generating a 2.7 A, 1.1 MV beam at its output is presented. Furthermore, a relatively high efficiency of 67% and high design average power suggest that EVT can find its use in industrial applications.« less

Power supply and impedance matching to drive technological radio-frequency plasmas with customized voltage waveforms.

PubMed

Franek, James; Brandt, Steven; Berger, Birk; Liese, Martin; Barthel, Matthias; Schüngel, Edmund; Schulze, Julian

2015-05-01

We present a novel radio-frequency (RF) power supply and impedance matching to drive technological plasmas with customized voltage waveforms. It is based on a system of phase-locked RF generators that output single frequency voltage waveforms corresponding to multiple consecutive harmonics of a fundamental frequency. These signals are matched individually and combined to drive a RF plasma. Electrical filters are used to prevent parasitic interactions between the matching branches. By adjusting the harmonics' phases and voltage amplitudes individually, any voltage waveform can be approximated as a customized finite Fourier series. This RF supply system is easily adaptable to any technological plasma for industrial applications and allows the commercial utilization of process optimization based on voltage waveform tailoring for the first time. Here, this system is tested on a capacitive discharge based on three consecutive harmonics of 13.56 MHz. According to the Electrical Asymmetry Effect, tuning the phases between the applied harmonics results in an electrical control of the DC self-bias and the mean ion energy at almost constant ion flux. A comparison with the reference case of an electrically asymmetric dual-frequency discharge reveals that the control range of the mean ion energy can be significantly enlarged by using more than two consecutive harmonics.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Optimization Of Shear Modes To Produce Enhanced Bandwidth In Ghz GaP Bragg Cells

NASA Astrophysics Data System (ADS)

Soos, J., I.; Rosemeier, R. G.; Rosenbaum, J.

1988-02-01

Applications of Gallium Phosphide (GaP) acousto-optic devices, at wavelengths from 570nm - 1.06um seem to be ideal for fiber optic modulators, scanners, deflectors, frequency shifters, Q-switches and mode lockers. One of the major applications are for RF spectrometers in early warning radar receivers and auto-correlators. Longitudinal GaP acousto-optic Bragg cells which have respectively operational frequencies in the range of 200 MHz - 3 GHz and diffraction efficiencies in the range of 120%/RF watt to 1%/RF watt have recently been fabricated. Comparatively, shear GaP devices which have operational frequencies in the range of 200 MHz to 2 GHz and diffraction efficiencies from 80%/RF watt to 7%/RF watt have also been constructed.

Atmospheric-pressure diffuse dielectric barrier discharges in Ar/O2 gas mixture using 200 kHz/13.56 MHz dual frequency excitation

NASA Astrophysics Data System (ADS)

Liu, Y.; Starostin, S. A.; Peeters, F. J. J.; van de Sanden, M. C. M.; de Vries, H. W.

2018-03-01

Atmospheric-pressure diffuse dielectric barrier discharges (DBDs) were obtained in Ar/O2 gas mixture using dual-frequency (DF) excitation at 200 kHz low frequency (LF) and 13.56 MHz radio frequency (RF). The excitation dynamics and the plasma generation mechanism were studied by means of electrical characterization and phase resolved optical emission spectroscopy (PROES). The DF excitation results in a time-varying electric field which is determined by the total LF and RF gas voltage and the spatial ion distribution which only responds to the LF component. By tuning the amplitude ratio of the superimposed LF and RF signals, the effect of each frequency component on the DF discharge mechanism was analysed. The LF excitation results in a transient plasma with the formation of an electrode sheath and therefore a pronounced excitation near the substrate. The RF oscillation allows the electron trapping in the gas gap and helps to improve the plasma uniformity by contributing to the pre-ionization and by controlling the discharge development. The possibility of temporally modifying the electric field and thus the plasma generation mechanism in the DF discharge exhibits potential applications in plasma-assisted surface processing and plasma-assisted gas phase chemical conversion.

Capacitively coupled RF voltage probe having optimized flux linkage

DOEpatents

Moore, James A.; Sparks, Dennis O.

1999-02-02

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

Efficient Radio Frequency Inductive Discharges in Near Atmospheric Pressure Using Immittance Conversion Topology

NASA Astrophysics Data System (ADS)

Razzak, M. Abdur; Takamura, Shuichi; Uesugi, Yoshihiko; Ohno, Noriyasu

A radio frequency (rf) inductive discharge in atmospheric pressure range requires high voltage in the initial startup phase and high power during the steady state sustainment phase. It is, therefore, necessary to inject high rf power into the plasma ensuring the maximum use of the power source, especially where the rf power is limited. In order to inject the maximum possible rf power into the plasma with a moderate rf power source of few kilowatts range, we employ the immittance conversion topology by converting a constant voltage source into a constant current source to generate efficient rf discharge by inductively coupled plasma (ICP) technique at a gas pressure with up to one atmosphere in argon. A novel T-LCL immittance circuit is designed for constant-current high-power operation, which is practically very important in the high-frequency range, to provide high effective rf power to the plasma. The immittance conversion system combines the static induction transistor (SIT)-based radio frequency (rf) high-power inverter circuit and the immittance conversion elements including the rf induction coil. The basic properties of the immittance circuit are studied by numerical analysis and verified the results by experimental measurements with the inductive plasma as a load at a relatively high rf power of about 4 kW. The performances of the immittance circuit are also evaluated and compared with that of the conventional series resonance circuit in high-pressure induction plasma generation. The experimental results reveal that the immittance conversion circuit confirms injecting higher effective rf power into the plasma as much as three times than that of the series resonance circuit under the same operating conditions and same dc supply voltage to the inverter, thereby enhancing the plasma heating efficiency to generate efficient rf inductive discharges.

RF current sensor

DOEpatents

Moore, James A.; Sparks, Dennis O.

1998-11-10

An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

RF sheaths for arbitrary B field angles

NASA Astrophysics Data System (ADS)

D'Ippolito, Daniel; Myra, James

2014-10-01

RF sheaths occur in tokamaks when ICRF waves encounter conducting boundaries and accelerate electrons out of the plasma. Sheath effects reduce the efficiency of ICRF heating, cause RF-specific impurity influxes from the edge plasma, and increase the plasma-facing component damage. The rf sheath potential is sensitive to the angle between the B field and the wall, the ion mobility and the ion magnetization. Here, we obtain a numerical solution of the non-neutral rf sheath and magnetic pre-sheath equations (for arbitrary values of these parameters) and attempt to infer the parametric dependences of the Child-Langmuir law. This extends previous work on the magnetized, immobile ion regime. An important question is how the rf sheath voltage distributes itself between sheath and pre-sheath for various B field angles. This will show how generally previous estimates of the rf sheath voltage and capacitance were reasonable, and to improve the RF sheath BC. Work supported by US DOE grants DE-FC02-05ER54823 and DE-FG02-97ER54392.

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2014 CFR

2014-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2012 CFR

2012-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2013 CFR

2013-10-01

...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the... dissipative network in the antenna system shall be made on FCC Form 302. The technical information supplied on... transmitter output within a tolerance of ±10 percent, to compensate for variations in line voltage or other...

Characteristic properties of the frame-antenna-produced RF discharge evolution in the Uragan-3M torsatron

NASA Astrophysics Data System (ADS)

Chechkin, V. V.; Grigor'eva, L. I.; Pavlichenko, R. O.; Kulaga, A. Ye.; Zamanov, N. V.; Moiseenko, V. E.; Burchenko, P. Ya.; Lozin, A. V.; Tsybenko, S. A.; Tarasov, I. K.; Pankratov, I. M.; Grekov, D. L.; Beletskii, A. A.; Kasilov, A. A.; Voitsenya, V. S.; Pashnev, V. K.; Konovalov, V. G.; Shapoval, A. N.; Mironov, Yu. K.; Romanov, V. S.

2014-08-01

In the ℓ = 3 Uragan-3M torsatron, hydrogen plasma is produced and heated by RF fields in the Alfvén range of frequencies (ω ≲ ω ci ). To this end, a frame antenna with a broad spectrum of generated parallel wavenumbers is used. The RF discharge evolution is studied experimentally at different values of the RF power fed to the antenna (the anode voltage of the oscillator and the antenna current) and the initial pressure of the fueling gas. It is shown that, depending on the antenna current and hydrogen pressure, the discharge can operate in two regimes differing in the plasma density, temperature, and particle loss. The change in the discharge regime with increasing anode voltage is steplike in character. The particular values of the anode voltage and pressure at which the change occurs are affected by RF preionization or breakdown stabilization by a microwave discharge. The obtained results will be used in future experiments to choose the optimal regimes of the frame-antenna-produced RF discharge as a target for the production and heating of a denser plasma by another, shorter wavelength three-half-turn antenna.

Design and Optimization of AlN based RF MEMS Switches

NASA Astrophysics Data System (ADS)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Radio frequency sheaths in an oblique magnetic field

DOE PAGES

Myra, James R.; D'Ippolito, Daniel A.

2015-06-01

The physics of radio-frequency (rf) sheaths near a conducting surface is studied for plasmas immersed in a magnetic field that makes an oblique angle θ with the surface. A set of one-dimensional equations is developed that describe the dynamics of the time-dependent magnetic presheath and non-neutral Debye sheath. The model employs Maxwell-Boltzmann electrons, and the magnetization and mobility of the ions is determined by the magnetic field strength, and wave frequency, respectively. The angle, θ assumed to be large enough to insure an electron-poor sheath, is otherwise arbitrary. Concentrating on the ion-cyclotron range of frequencies, the equations are solved numericallymore » to obtain the rectified (dc) voltage, the rf voltage across the sheath and the rf current flowing through the sheath. As an application of this model, the sheath voltage-current relation is used to obtain the rf sheath impedance, which in turn gives an rf sheath boundary condition for the electric field at the sheath-plasma interface that can be used in rf wave codes. In general the impedance has both resistive and capacitive contributions, and generalizes previous sheath boundary condition models. The resistive part contributes to parasitic power dissipation at the wall.« less

Modeling of an 8-12 GHz receiver front-end based on an in-line MEMS frequency discriminator

NASA Astrophysics Data System (ADS)

Chu, Chenlei; Liao, Xiaoping

2018-06-01

This paper focuses on the modeling of an 8-12 GHz RF (radio frequency) receiver front-end based on an in-line MEMS (microelectromechanical systems) frequency discriminator. Actually, the frequency detection is realized by measuring the output dc thermal voltage generated by the MEMS thermoelectric power sensor. Based on this thermal voltage, it has a great potential to tune the resonant frequency of the VCO (voltage controlled oscillator) in the RF receiver front-end application. The equivalent circuit model of the in-line frequency discriminator is established and the measurement verification is also implemented. Measurement and simulation results show that the output dc thermal voltage has a nearly linear relation with frequency. A new construction of RF receiver front-end is then obtained by connecting the in-line frequency discriminator with the voltage controlling port of VCO. Lastly, a systemic simulation is processed by computer-aided software and the real-time simulation waveform at each key point is observed clearly.

Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors.

PubMed

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-05-04

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage.

Coaxial cable stripping device facilitates RF cabling fabrication

NASA Technical Reports Server (NTRS)

Hughes, R. S.; Tobias, R. A.

1967-01-01

Coaxial cable stripping device assures clean, right angled shoulder for RF cable connector fabrication. This method requires minimal skill and creates a low voltage standing wave ratio and mechanical stability in the interconnecting RF Cables.

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

NASA Astrophysics Data System (ADS)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.; Rebecca, L.; Lalnunthari, J.; Thanga, H. H.

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power aremore » studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.« less

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements.

PubMed

Hlondo, L R; Lalremruata, B; Punte, L R M; Rebecca, L; Lalnunthari, J; Thanga, H H

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

Design development and testing of high voltage power supply with crowbar protection for IOT based RF amplifier system in VECC

NASA Astrophysics Data System (ADS)

Thakur, S. K.; Kumar, Y.

2018-05-01

This paper described the detailed design, development and testing of high voltage power supply (‑30 kV, 3.2 A) and different power supplies for biasing electrodes of Inductive Output Tube (IOT) based high power Radio Frequency (RF) amplifier. This IOT based RF amplifier is further used for pursuing research and development activity in superconducting RF cavity project at Variable Energy Cyclotron Centre (VECC) Kolkata. The state-of-the-art technology of IOT-based high power RF amplifier is designed, developed, and tested at VECC which is the first of its kind in India. A high voltage power supply rated at negative polarity of 30 kV dc/3.2 A is required for biasing cathode of IOT with crowbar protection circuit. This power supply along with crowbar protection system is designed, developed and tested at VECC for testing the complete setup. The technical difficulties and challenges occured during the design of cathode power supply, its crowbar protection techniques along with other supported power supplies i.e. grid and ion pump power supplies are discussed in this paper.

Study of the effects of corrugated wall structures due to blanket modules around ICRH antennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumortier, Pierre; Louche, Fabrice; Messiaen, André

2014-02-12

In future fusion reactors, and in ITER, the first wall will be covered by blanket modules. These blanket modules, whose dimensions are of the order of the ICRF wavelengths, together with the clearance gaps between them will constitute a corrugated structure which will interact with the electromagnetic waves launched by ICRF antennas. The conditions in which the grooves constituted by the clearance gaps between the blanket modules can become resonant are studied. Simple analytical models and numerical simulations show that mushroom type structures (with larger gaps at the back than at the front) can bring down the resonance frequencies, whichmore » could lead to large voltages in the gaps between the blanket modules and perturb the RF properties of the antenna if they are in the ICRF operating range. The effect on the wave propagation along the wall structure, which is acting as a spatially periodic (toroidally and poloidally) corrugated structure, and hence constitutes a slow wave structure modifying the wall boundary condition, is examined.« less

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, Thomas E.

1997-01-01

A micropower RF transdponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life.

Ion trap device

DOEpatents

Ibrahim, Yehia M.; Smith, Richard D.

2016-01-26

An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

Micropower RF transponder with superregenerative receiver and RF receiver with sampling mixer

DOEpatents

McEwan, T.E.

1997-05-13

A micropower RF transponder employs a novel adaptation of the superregenerative receiver wherein the quench oscillator is external to the regenerative transistor. The quench oscillator applies an exponentially decaying waveform rather than the usual sinewave to achieve high sensitivity at microampere current levels. Further improvements include circuit simplifications for antenna coupling, extraction of the detected signal, and a low-voltage bias configuration that allows operation with less than a 1-volt rail voltage. The inventive transponder is expected to operate as long as the battery shelf life. 13 figs.

The contribution of radio-frequency rectification to field-aligned losses of high-harmonic fast wave power to the divertor in the National Spherical Torus eXperiment

DOE PAGES

Perkins, R. J.; Hosea, J. C.; Jaworski, M. A.; ...

2015-04-13

The National Spherical Torus eXperiment (NSTX) can exhibit a major loss of high-harmonic fast wave (HHFW) power along scrape-off layer (SOL) field lines passing in front of the antenna, resulting in bright and hot spirals on both the upper and lower divertor regions. One possible mechanism for this loss is RF sheaths forming at the divertors. We demonstrate that swept-voltage Langmuir probe characteristics for probes under the spiral are shifted relative to those not under the spiral in a manner consistent with RF rectification. We estimate both the magnitude of the RF voltage across the sheath and the sheath heatmore » flux transmission coefficient in the presence of the RF field. Though the precise comparison between computed heat flux and infrared (IR) thermography cannot yet be made, the computed heat deposition compares favorably with the projections from IR camera measurements. The RF sheath losses are significant and contribute substantially to the total SOL losses of HHFW power to the divertor for the cases studied. Our work will guide future experimentation on NSTX-U, where a wide-angle IR camera and a dedicated set of coaxial Langmuir probes for measuring the RF sheath voltage directly will quantify the contribution of RF sheath rectification to the heat deposition from the SOL to the divertor.« less

Low-voltage high-reliability MEMS switch for millimeter wave 5G applications

NASA Astrophysics Data System (ADS)

Shekhar, Sudhanshu; Vinoy, K. J.; Ananthasuresh, G. K.

2018-07-01

Lack of reliability of radio-frequency microelectromechanical systems (RF MEMS) switches has inhibited their commercial success. Dielectric stiction/breakdown and mechanical shock due to high actuation voltage are common impediments in capacitive MEMS switches. In this work, we report low-actuation voltage RF MEMS switch and its reliability test. Experimental characterization of fabricated devices demonstrate that proposed MEMS switch topology needs very low voltage (4.8 V) for actuation. The mechanical resonant frequency, f 0, quality factor, Q, and switching time are measured to be 8.35 kHz, 1.2, and 33 microsecond, respectively. These MEMS switches have high reliability in terms of switching cycles. Measurements are performed using pulse waveform of magnitude of 6 V under hot-switching condition. Temperature measurement results confirm that the reported switch topology has good thermal stability. The robustness in terms of the measured pull-in voltage shows a variation of 0.08 V °C‑1. Lifetime measurement results after 10 million switching cycles demonstrate insignificant change in the RF performance without any failure. Experimental results show that low voltage improves the lifetime. Low insertion loss (less than 0.6 dB) and improved isolation (above 40 dB) in the frequency range up to 60 GHz have been reported. Measured RF characteristics in the frequency range from 10 MHz to 60 GHz support that these MEMS switches are favorable choice for mm-wave 5G applications.

A Compact High-Brightness Heavy-Ion Injector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Westenskow, G A; Grote, D P; Halaxa, E

2005-05-11

To provide a compact high-brightness heavy-ion beam source for Heavy Ion Fusion (HIF) accelerators, we have been experimenting with merging multi-beamlets in an injector which uses an RF plasma source. In an 80-kV 20-microsecond experiment, the RF plasma source has produced up to 5 mA of Ar{sup +} in a single beamlet. An extraction current density of 100 mA/cm{sup 2} was achieved, and the thermal temperature of the ions was below 1 eV. We have tested at full voltage gradient the first 4 gaps of an injector design. Einzel lens were used to focus the beamlets while reducing the beamletmore » to beamlet space charge interaction. We were able to reach greater than 100 kV/cm in the first four gaps. We also performed experiments on a converging 119 multi-beamlet source. Although the source has the same optics as a full 1.6 MV injector system, these test were carried out at 400 kV due to the test stand HV limit. We have measured the beam's emittance after the beamlets are merged and passed through an electrostatic quadrupole (ESQ). Our goal is to confirm the emittance growth and to demonstrate the technical feasibility of building a driver-scale HIF injector.« less

A fully wafer-level packaged RF MEMS switch with low actuation voltage using a piezoelectric actuator

NASA Astrophysics Data System (ADS)

Park, Jae-Hyoung; Lee, Hee-Chul; Park, Yong-Hee; Kim, Yong-Dae; Ji, Chang-Hyeon; Bu, Jonguk; Nam, Hyo-Jin

2006-11-01

In this paper, a fully wafer-level packaged RF MEMS switch has been demonstrated, which has low operation voltage, using a piezoelectric actuator. The piezoelectric actuator was designed to operate at low actuation voltage for application to advanced mobile handsets. The dc contact type RF switch was packaged using the wafer-level bonding process. The CPW transmission lines and piezoelectric actuators have been fabricated on separate wafers and assembled together by the wafer-level eutectic bonding process. A gold and tin composite was used for eutectic bonding at a low temperature of 300 °C. Via holes interconnecting the electrical contact pads through the wafer were filled completely with electroplated copper. The fully wafer-level packaged RF MEMS switch showed an insertion loss of 0.63 dB and an isolation of 26.4 dB at 5 GHz. The actuation voltage of the switch was 5 V. The resonant frequency of the piezoelectric actuator was 38.4 kHz and the spring constant of the actuator was calculated to be 9.6 N m-1. The size of the packaged SPST (single-pole single-through) switch was 1.2 mm × 1.2 mm including the packaging sealing rim. The effect of the proposed package structure on the RF performance was characterized with a device having CPW through lines and vertical feed lines excluding the RF switches. The measured packaging loss was 0.2 dB and the return loss was 33.6 dB at 5 GHz.

UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

NASA Astrophysics Data System (ADS)

Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

2016-05-01

This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

PubMed Central

Song, Seung Min; Bong, Jae Hoon; Hwang, Wan Sik; Cho, Byung Jin

2016-01-01

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high output resistance is therefore a crucial step for graphene to be utilized in RF applications. In the present study, we report high output resistances and voltage gains in graphene-on-silicon (GoS) FETs. This is achieved by utilizing bare silicon as a supporting substrate without an insulating layer under the graphene. The GoSFETs exhibit a maximum output resistance of 2.5 MΩ∙μm, maximum intrinsic voltage gain of 28 dB, and maximum voltage gain of 9 dB. This method opens a new route to overcome the limitations of conventional graphene-on-insulator (GoI) FETs and subsequently brings graphene electronics closer to practical usage. PMID:27142861

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

On-line wall-free cell for laser-induced fluorescence detection in capillary electrophoresis.

PubMed

Yu, Chang-Zhu; He, You-Zhao; Xie, Hai-Yang; Gao, Yong; Gan, Wu-Er; Li, Jun

2009-05-15

A wall-free detection method based on liquid junction in a capillary gap was proposed for laser-induced fluorescence (LIF) of capillary electrophoresis (CE). The capillary gap of the wall-free cell was fabricated by etching a 10-mm x 50-microm I.D. fused-silica capillary to obtain a polyimide coating sleeve, decoating about 6mm at one end of both 50 microm I.D. separation and liquid junction capillary, inserting the treated capillary ends into the coating sleeve oppositely, fixing the capillaries with a gap distance of 140 microm by epoxy glue and removing the coating sleeve by burning. The theoretical model, experimental results and wall-free cell images indicated that the gap distance and applied voltage were main influence factors on the wall-free detection. Since the wall-free cell increased the absorption light path and avoided the stray light from the capillary wall, it improved the ratio of signal to noise and limit of detection (LOD) of CE-LIF. Three flavin compounds of riboflavin (RF), flavin mononucleotide sodium (FMN) and flavin adenine dinucleotide disodium (FAD) were used to evaluate the wall-free detection method. Compared with on-column cell, the LODs of the wall-free cell were improved 15-, 6- and 9-fold for RF, FMN and FAD, respectively. The linear calibration concentrations of the flavins ranged from 0.005 to 5.0 micromol/L. The column efficiency was in the range from 1.0 x 10(5) to 2.5 x 10(5) plates. The wall-free detection of CE-LIF was applied to the analysis of the flavins in spinach and lettuce leaves.

Double and triple-harmonic RF buckets and their use for bunch squeezing in AGS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gardner, C. J.

2016-08-24

For the past several years we have merged bunches in AGS in order to achieve the desired intensity per bunch prior to injection into RHIC. The merging is done on a flat porch at or above AGS injection energy. Because the merges involve the reduction of the RF harmonic number by a factor of 2 (for a 2 to 1 merge) and then a factor of 3 (for a 3 to 1 merge), one requires RF frequencies 6hf s, 3hf s, 2hf s and hf s, where f s is the revolution frequency on the porch and h = 4more » is the fundamental harmonic number. The standard AGS RF cavities cannot operate at the lowest frequencies 2hf s and hf s; these are provided by two modified cavities. Upon completion of the merges, the bunches are sitting in harmonic h buckets. In order to be accelerated they need to be squeezed into harmonic 3h buckets. This is accomplished by producing a double-harmonic bucket in which harmonics h and 2h act in concert, and then a triple-harmonic bucket in which harmonics h, 2h, and 3h act in concert. Simulations have shown that the squeeze presents an acceptance bottleneck which limits the longitudinal emittance that can be put into the harmonic 3h bucket. In this note the areas of the double and triple-harmonic buckets are calculated explicitly, and it is shown that these go through a minimum as the RF voltages are raised to the desired values. Several RF voltage ranges are examined, and the acceptance bottleneck is determined for each of these. Finally, the acceptance bottleneck for Au77+ bunches in AGS is calculated for several RF voltage ranges. The main result is that the RF voltages for the low-frequency harmonic h and 2h cavities both must be at least 22 kV in order to achieve an acceptance of 0:6 eV s per nucleon. If the harmonic h and 2h voltages are 15 and 22 kV, respectively, then the acceptance is reduced to 0:548 eV s per nucleon.« less

A Micromechanical RF Channelizer

NASA Astrophysics Data System (ADS)

Akgul, Mehmet

The power consumption of a radio generally goes as the number and strength of the RF signals it must process. In particular, a radio receiver would consume much less power if the signal presented to its electronics contained only the desired signal in a tiny percent bandwidth frequency channel, rather than the typical mix of signals containing unwanted energy outside the desired channel. Unfortunately, a lack of filters capable of selecting single channel bandwidths at RF forces the front-ends of contemporary receivers to accept unwanted signals, and thus, to operate with sub-optimal efficiency. This dissertation focuses on the degree to which capacitive-gap transduced micromechanical resonators can achieve the aforementioned RF channel-selecting filters. It aims to first show theoretically that with appropriate scaling capacitive-gap transducers are strong enough to meet the needed coupling requirements; and second, to fully detail an architecture and design procedure needed to realize said filters. Finally, this dissertation provides an actual experimentally demonstrated RF channel-select filter designed using the developed procedures and confirming theoretical predictions. Specifically, this dissertation introduces four methods that make possible the design and fabrication of RF channel-select filters. The first of these introduces a small-signal equivalent circuit for parallel-plate capacitive-gap transduced micromechanical resonators that employs negative capacitance to model the dependence of resonance frequency on electrical stiffness in a way that facilitates the analysis of micromechanical circuits loaded with arbitrary electrical impedances. The new circuit model not only correctly predicts the dependence of electrical stiffness on the impedances loading the input and output electrodes of parallel-plate capacitive-gap transduced micromechanical device, but does so in a visually intuitive way that identifies current drive as most appropriate for applications that must be stable against environmental perturbations, such as acceleration or power supply variations. Measurements on fabricated devices in fact confirm predictions by the new model of up to 4x improvement in frequency stability against DC-bias voltage variations for contour-mode disk resonators as the resistance loading their ports increases. By enhancing circuit visualization, this circuit model makes more obvious the circuit design procedures and topologies most beneficial for certain mechanical circuits, e.g., filters and oscillators. The second method enables simultaneous low motional resistance ( Rx 70,000) at 61 MHz using an improved ALD-partial electrode-to-resonator gap filling technique that reduces the Q-limiting surface losses of previous renditions by adding an alumina pre-coating before ALD of the gap-filling high-k dielectric. This effort increases the Q over the ˜10,000 of previous renditions by more than 6x towards demonstration of the first VHF micromechanical resonators in any material, piezoelectric or not, to meet the simultaneous high Q (>50,000) and low motional resistance Rx (< 200O) specs highly desired for front-end frequency channelizer requirements in cognitive and software-defined radio architectures. The methods presented in this chapter finally overcome the high impedance bottleneck that has plagued capacitively transduced micro-mechanical resonators over the past decade. The third method introduces a capacitively transduced micromechanical resonator constructed in hot filament CVD boron-doped microcrystalline diamond (MCD) structural material that posts a measured Q of 146,580 at 232.441 kHz, which is 3x higher than the previous high for conductive polydiamond. Moreover, radial-contour mode disk resonators fabricated in the same MCD film and using material mismatched stems exhibit a Q of 71,400 at 299.86 MHz. The material used here further exhibits an acoustic velocity of 18,516 m/s, which is now the highest to date among available surface micromachinable materials. For many potential applications, the hot filament CVD method demonstrated in this work is quite enabling, since it provides a much less expensive method than microwave CVD based alternatives for depositing doped CVD diamond over large wafers (e.g., 8") for batch fabrication. The first three methods described so far focus on a single vibrating disk resonator and improve its electrical equivalent modeling, C x/Co, and Q. Once we craft the resonator that meets the challenging design requirements of RF channel-select filters, the last method presents a design hierarchy that achieves the desired filter response with a specific center frequency, bandwidth, and filter termination resistance. The design procedure culminates in specific values for all mechanical geometry variables necessary for the filter layout, such as disk radii, and beam widths; and process design variables such as resonator material thickness and capacitive actuation gap spacing. Finally, the experimental results introduce a 39nm-gap capacitive transducer, voltage-controlled frequency tuning, and a stress relieving coupled array design that enable a 0.09% bandwidth 223.4 MHz channel-select filter with only 2.7dB of in-band insertion loss and 50dB rejection of out-of-band interferers. This amount of rejection is more than 23dB better than previous capacitive-gap transduced filter designs that did not benefit from sub-50nm gaps. It also comes in tandem with a 20dB shape factor of 2.7 realized by a hierarchical mechanical circuit design utilizing 206 micromechanical circuit elements, all contained in an area footprint of only 600mumx420mum. The key to such low insertion loss for this tiny percent bandwidth is Q's>8,800 supplied by polysilicon disk resonators employing for the first time capacitive transducer gaps small enough to generate coupling strengths of C x/Co ˜0.1%, which is a 6.1x improvement over previous efforts. The filter structure utilizes electrical tuning to correct frequency mismatches due to process variations, where a dc tuning voltage of 12.1 V improves the filter insertion loss by 1.8 dB and yields the desired equiripple passband shape. An electrical equivalent circuit is presented that captures not only the ideal filter response, but also parasitic non-idealities that create electrical feed-through, where simulation of the derived equivalent circuit matches the measured filter spectrum closely both in-band and out-of-band. The combined 2.7dB passband insertion loss and 50dB stopband rejection of the demonstrated 206-element 0.09% bandwidth 223.4-MHz differential micromechanical disk filter represents a landmark for capacitive-gap transduced micromechanical resonator technology. This demonstration proves that the mere introduction of small gaps, on the order of 39 nm, goes a long way towards moving this technology from a research curiosity to practical performance specs commensurate with the needs of actual RF channel-selecting receiver front-ends. It also emphasizes the need for tuning and defensive stress-relieving structural design when percent bandwidths and gaps shrink, all demonstrated by the work herein. Perhaps most encouraging is that the models presented in dissertation used to design the filter and predict its behavior seem to be all be spot on. This means that predictions using these models foretelling 1-GHz filters with sub-200O impedances enabled by 20nm-gaps might soon come true, bringing this technology ever closer to someday realizing the ultra-low power channel-selecting communication front-ends targeted for autonomous set-and-forget sensor networks. Work towards these goals continues.

Detector power linearity requirements and verification techniques for TMI direct detection receivers

NASA Technical Reports Server (NTRS)

Reinhardt, Victor S. (Inventor); Shih, Yi-Chi (Inventor); Toth, Paul A. (Inventor); Reynolds, Samuel C. (Inventor)

1997-01-01

A system (36, 98) for determining the linearity of an RF detector (46, 106). A first technique involves combining two RF signals from two stable local oscillators (38, 40) to form a modulated RF signal having a beat frequency, and applying the modulated RF signal to a detector (46) being tested. The output of the detector (46) is applied to a low frequency spectrum analyzer (48) such that a relationship between the power levels of the first and second harmonics generated by the detector (46) of the beat frequency of the modulated RF signal are measured by the spectrum analyzer (48) to determine the linearity of the detector (46). In a second technique, an RF signal from a local oscillator (100) is applied to a detector (106) being tested through a first attenuator (102) and a second attenuator (104). The output voltage of the detector (106) is measured when the first attenuator (102) is set to a particular attenuation value and the second attenuator (104) is switched between first and second attenuation values. Further, the output voltage of the detector (106) is measured when the first attenuator (102) is set to another attenuation value, and the second attenuator (104) is again switched between the first and second attenuation values. A relationship between the voltage outputs determines the linearity of the detector (106).

Design and Development of a Series Switch for High Voltage in RF Heating

NASA Astrophysics Data System (ADS)

Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

2013-02-01

Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

Efficient 30-W, 140-MHz rf amplifier for CW CO2 waveguide laser excitation

NASA Technical Reports Server (NTRS)

Hochuli, U. E.; Haldemann, P. R.

1988-01-01

Details of a 30-W, 140-MHz rf amplifier for CW CO2 waveguide laser excitation are presented. The amplifier delivers 30 W into a 50-Ohm load while requiring only 40 W of dc power from a 28-V supply and 100 mW of rf drive power for an overall efficiency of 75 percent. A coupling-starting network design theory is given that provides the initiation over voltage for the discharge plasma from an rf power source of limited output voltage capability. The network then matches the drive circuit to the new input impedance of the operating discharge without any adjustments. This design theory applies to the whole class of networks whose losses can be approximated by a loss conductance in parallel with the gas discharge.

Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

NASA Astrophysics Data System (ADS)

Yeung, Sai Ho; Pradhan, Raunaq; Feng, Xiaohua; Zheng, Yuanjin

2015-09-01

Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF) stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC) stimulation, magnetic stimulation (MS) and transcutaneous electrical nerve stimulation (TENS) are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissue voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.

Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yeung, Sai Ho; Pradhan, Raunaq; Feng, Xiaohua

Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF) stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC) stimulation, magnetic stimulation (MS) and transcutaneous electrical nerve stimulation (TENS) are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissuemore » voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.« less

Enhanced dynamical stability with harmonic slip stacking

DOE PAGES

Eldred, Jeffrey; Zwaska, Robert

2016-10-26

We develop a configuration of radio-frequency (rf) cavities to dramatically improve the performance of slip-stacking. Slip-stacking is an accumulation technique used at Fermilab to nearly double proton intensity by maintaining two beams of different momenta in the same storage ring. The two particle beams are longitudinally focused in the Recycler by two 53 MHz 100 kV rf cavities with a small frequency difference between them. We propose an additional 106 MHz 20 kV rf cavity with a frequency at the double the average of the upper and lower main rf frequencies. We show the harmonic rf cavity cancels out themore » resonances generated between the two main rf cavities and we derive the relationship between the harmonic rf voltage and the main rf voltage. We find the area factors that can be used to calculate the available phase space area for any set of beam parameters without individual simulation. We establish Booster beam quality requirements to achieve 99\\% slip-stacking efficiency. We measure the longitudinal distribution of the Booster beam and use it to generate a realistic beam model for slip-stacking simulation. In conclusion, we demonstrate that the harmonic rf cavity can not only reduce particle loss during slip-stacking, but also reduce the final longitudinal emittance.« less

Enhanced dynamical stability with harmonic slip stacking

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldred, Jeffrey; Zwaska, Robert

We develop a configuration of radio-frequency (rf) cavities to dramatically improve the performance of slip-stacking. Slip-stacking is an accumulation technique used at Fermilab to nearly double proton intensity by maintaining two beams of different momenta in the same storage ring. The two particle beams are longitudinally focused in the Recycler by two 53 MHz 100 kV rf cavities with a small frequency difference between them. We propose an additional 106 MHz 20 kV rf cavity with a frequency at the double the average of the upper and lower main rf frequencies. We show the harmonic rf cavity cancels out themore » resonances generated between the two main rf cavities and we derive the relationship between the harmonic rf voltage and the main rf voltage. We find the area factors that can be used to calculate the available phase space area for any set of beam parameters without individual simulation. We establish Booster beam quality requirements to achieve 99\\% slip-stacking efficiency. We measure the longitudinal distribution of the Booster beam and use it to generate a realistic beam model for slip-stacking simulation. In conclusion, we demonstrate that the harmonic rf cavity can not only reduce particle loss during slip-stacking, but also reduce the final longitudinal emittance.« less

Spatial proximity effects on the excitation of sheath RF voltages by evanescent slow waves in the ion cyclotron range of frequencies

NASA Astrophysics Data System (ADS)

Colas, Laurent; Lu, Ling-Feng; Křivská, Alena; Jacquot, Jonathan; Hillairet, Julien; Helou, Walid; Goniche, Marc; Heuraux, Stéphane; Faudot, Eric

2017-02-01

We investigate theoretically how sheath radio-frequency (RF) oscillations relate to the spatial structure of the near RF parallel electric field E ∥ emitted by ion cyclotron (IC) wave launchers. We use a simple model of slow wave (SW) evanescence coupled with direct current (DC) plasma biasing via sheath boundary conditions in a 3D parallelepiped filled with homogeneous cold magnetized plasma. Within a ‘wide-sheath’ asymptotic regime, valid for large-amplitude near RF fields, the RF part of this simple RF  +  DC model becomes linear: the sheath oscillating voltage V RF at open field line boundaries can be re-expressed as a linear combination of individual contributions by every emitting point in the input field map. SW evanescence makes individual contributions all the larger as the wave emission point is located closer to the sheath walls. The decay of |V RF| with the emission point/sheath poloidal distance involves the transverse SW evanescence length and the radial protrusion depth of lateral boundaries. The decay of |V RF| with the emitter/sheath parallel distance is quantified as a function of the parallel SW evanescence length and the parallel connection length of open magnetic field lines. For realistic geometries and target SOL plasmas, poloidal decay occurs over a few centimeters. Typical parallel decay lengths for |V RF| are found to be smaller than IC antenna parallel extension. Oscillating sheath voltages at IC antenna side limiters are therefore mainly sensitive to E ∥ emission by active or passive conducting elements near these limiters, as suggested by recent experimental observations. Parallel proximity effects could also explain why sheath oscillations persist with antisymmetric strap toroidal phasing, despite the parallel antisymmetry of the radiated field map. They could finally justify current attempts at reducing the RF fields induced near antenna boxes to attenuate sheath oscillations in their vicinity.

Investigation of microstructural and electrical properties of composition dependent co-sputtered Hf1-x Ta x O2 thin films

NASA Astrophysics Data System (ADS)

Das, K. C.; Tripathy, N.; Ghosh, S. P.; Mohanta, S. K.; Nakamura, A.; Kar, J. P.

2017-11-01

Tantalum doped HfO2 gate dielectric thin films were deposited on silicon substrates using RF reactive co-sputtering by varying RF power of Ta target from 15 W to 90 W. The morphological, compositional and electrical properties of Hf1-x Ta x O2 films were systematically investigated. The Ta content was found to be increased up to 21% for a Ta target power of 90 W. The evolution of monoclinic phase of Hf1-x Ta x O2 was seen from XRD study upto RF power of 60 W and afterwards, the amorphous like behaviour is appeared. The featureless smooth surface with the decrease in granular morphology has been observed from FESEM micrographs of the doped films at higher RF powers of Ta. The flatband voltage is found to be shifted towards negative voltage in the capacitance-voltage plot, which was attributed to the enhancement in positive oxide charge density with rise in RF power. The interface charge density has a minimum value of 7.85  ×  1011 eV-1 cm-2 for the film deposited at Ta RF power of 75 W. The Hf1-x Ta x O2 films deposited at Ta target RF power of 90 W has shown lower leakage current. The high on/off ratio of the current during the set process in Hf1-x Ta x O2 based memristors is found suitable for bipolar resistive switching memory device applications.

High Voltage Test-Stand Research Done on ICRF Antenna Elements of the High-Harmonic Fast-Wave System of NSTX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkins, R. J.; Ahn, J.W.; Bortolon, A.

The twelve-strap high-harmonic fast-wave (HHFW) antenna on NSTX has exhibited a high-voltage standoff around 25 kV during previous experimental campaigns; this standoff needs to be improved for increased power coupling. During the recent NSTX-U upgrade period, a test-stand was set up with two antenna straps along with Faraday screens for testing purposes. Using a diagnostic suite consisting of a fast camera, a residual gas analyzer, a pressure gage, high-voltage probes, and an infrared camera, several interesting discoveries were made, leading to possible improvements of the antenna RF voltage operation level. First, arcing was observed outside the Faraday shields towards themore » low-voltage ("grounded") end of the straps (faraday shield box ends); this arcing was successfully eliminated by installing an additional grounding point between the Faraday shield box and the vessel wall. Second, considerable outgassing was observed during the RF pulse and the amount of outgassing was found to decrease with increasing RF power, possibly indicative of multipacting. Finally, infrared camera measurements of heating on the Faraday shield assembly suggest that the return currents on the Faraday shield box are highly localized at the box sides and possibly account for the pressure increase observed. Computations of these RF currents using Microwave Studio show qualitative agreement with the heated regions. New grounding points between the antenna box and the vessel have been implemented in NSTX-U, where future tests will be done to determine if the high-voltage standoff has improved. Further antenna improvements will be sought through future experiments on the test stand.« less

A low-loss, single-pole, four-throw RF MEMS switch driven by a double stop comb drive

NASA Astrophysics Data System (ADS)

Kang, S.; Kim, H. C.; Chun, K.

2009-03-01

Our goal was to develop a single-pole four-throw (SP4T) radio frequency microelectromechanical system (RF MEMS) switch for band selection in a multi-band, multi-mode, front-end module of a wireless transceiver system. The SP4T RF MEMS switch was based on an arrangement of four single-pole single-throw (SPST) RF MEMS switches. The SP4T RF MEMS switch was driven by a double stop (DS) comb drive, with a lateral resistive contact, and composed of single crystalline silicon (SCS) on glass. A large contact force at a low-drive voltage was achieved by electrostatic actuation of the DS comb drive. Good RF characteristics were achieved by the large contact force and the lateral resistive Au-to-Au contact. Mechanical reliability was achieved by using SCS which has no residual stress as a structure material. The developed SP4T RF MEMS switch has a drive voltage of 15 V, an insertion loss below 0.31 dB at 6 GHz after more than one million cycles under a 10 mW signal, a return loss above 20 dB and an isolation value above 36 dB.

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

NASA Astrophysics Data System (ADS)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Simulation of RF power and multi-cusp magnetic field requirement for H- ion sources

NASA Astrophysics Data System (ADS)

Pathak, Manish; Senecha, V. K.; Kumar, Rajnish; Ghodke, Dharmraj. V.

2016-12-01

A computer simulation study for multi-cusp RF based H- ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H- Linac project for SNS applications. The average reaction rates for different reactions responsible for H- ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H- ion source for a maximum possible H- ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H- ion source like excited hydrogen molecular density, H- ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H- ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H- ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

Simulation of Dual-Electrode Capacitively Coupled Plasma Discharges

NASA Astrophysics Data System (ADS)

Lu, Yijia; Ji, Linhong; Cheng, Jia

2016-12-01

Dual-electrode capacitively coupled plasma discharges are investigated here to lower the non-uniformity of plasma density. The dual-electrode structure proposed by Jung splits the electrode region and increases the flexibility of fine tuning non-uniformity. Different RF voltages, frequencies, phase-shifts and electrode areas are simulated and the influences are discussed. RF voltage and electrode area have a non-monotonic effect on non-uniformity, while frequency has a monotonic effect. Phase-shift has a cyclical influence on non-uniformity. A special combination of 224 V voltage and 11% area ratio with 10 MHz lowers the non-uniformity of the original set (200 V voltage and 0% area ratio with 10 MHz) by 46.5%. The position of the plasma density peak at the probe line has been tracked and properly tuning the phase-shift can obtain the same trace as tuning frequency or voltage. supported by National Natural Science Foundation of China (No. 51405261)

High Voltage Guided Pulmonary Vein Isolation in Paroxysmal Atrial Fibrillation.

PubMed

Boles, Usama; Gul, Enes E; Enriquez, Andres; Lee, Howard; Riegert, Dave; Andres, Adrian; Baranchuk, Adrian; Redfearn, Damian; Glover, Benedict; Simpson, Chris; Abdollah, Hoshiar; Michael, Kevin

2017-01-01

Ablation of the pulmonary vein (PV) antrum using an electroanatomic mapping system is standard of care for point-by-point pulmonary vein isolation (PVI). Focused ablation at critical areas is more likely to achieve intra-procedural PV isolation and decrease the likelihood for reconnection and recurrence of atrial fibrillation (AF). Therefore this prospective pilot study is to investigate the short-term outcome of a voltage-guided circumferential PV ablation (CPVA) strategy. We recruited patients with a history of paroxysmal atrial fibrillation (AF). The EnSite NavX system (St. Jude Medical, St Paul, Minnesota, USA) was employed to construct a three-dimensional geometry of the left atrium (LA) and voltage map. CPVA was performed; with radiofrequency (RF) targeting sites of highest voltage first in a sequential clockwise fashion then followed by complete the gaps in circumferential ablation. Acute and short-term outcomes were compared to a control group undergoing conventional standard CPVA using the same 3D system. Follow-up was scheduled at 3, 6 and 12 months. Thirty-four paroxysmal AF patients with a mean age of 40 years were included. Fourteen patients (8 male) underwent voltage mapping and 20 patients underwent empirical, non-voltage guided standard CPVA. A mean of 54 ± 12 points per PV antrum were recorded. Mean voltage for right and left PVs antra were 1.7±0.1 mV and 1.9±0.2 mV, respectively. There was a trend towards reduced radiofrequency time (40.9±17.4 vs. 48.1±15.5 mins; p=0.22). Voltage-guided CPVA is a promising strategy in targeting critical points for PV isolation with a lower trend of AF recurrence compared with a standard CPVA in short-term period. Extended studies to confirm these findings are warranted.

A novel photonic oscillator

NASA Technical Reports Server (NTRS)

Yao, X. S.; Maleki, L.

1995-01-01

We report a novel oscillator for photonic RF systems. This oscillator is capable of generating high-frequency signals up to 70 GHz in both electrical and optical domains and is a special voltage-controlled oscillator with an optical output port. It can be used to make a phase-locked loop (PLL) and perform all functions that a PLL is capable of for photonic systems. It can be synchronized to a reference source by means of optical injection locking, electrical injection locking, and PLL. It can also be self-phase locked and self-injection locked to generate a high-stability photonic RF reference. Its applications include high-frequency reference regeneration and distribution, high-gain frequency multiplication, comb-frequecy and square-wave generation, carrier recovery, and clock recovery. We anticipate that such photonic voltage-controlled oscillators (VCOs) will be as important to photonic RF systems as electrical VCOs are to electrical RF systems.

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

PubMed Central

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M.

2012-01-01

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance. PMID:23202014

Optimization of passive low power wireless electromagnetic energy harvesters.

PubMed

Nimo, Antwi; Grgić, Dario; Reindl, Leonhard M

2012-10-11

This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at -30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

High stability amplifier

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1983-01-01

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Discharge characteristics of a needle-to-plate electrode at a micro-scale gap

NASA Astrophysics Data System (ADS)

Ronggang, WANG; Qizheng, JI; Tongkai, ZHANG; Qing, XIA; Yu, ZHANG; Jiting, OUYANG

2018-05-01

To understand the discharge characteristics under a gap of micrometers, the breakdown voltage and current–voltage curve are measured experimentally in a needle-to-plate electrode at a micro-scale gap of 3–50 μm in air. The effect of the needle radius and the gas pressure on the discharge characteristics are tested. The results show that when the gap is larger than 10 μm, the relation between the breakdown voltage and the gap looks like the Paschen curve; while below 10 μm, the breakdown voltage is nearly constant in the range of the tested gap. However, at the same gap distance, the breakdown voltage is still affected by the pressure and shows a trend similar to Paschen’s law. The current–voltage characteristic in all the gaps is similar and follows the trend of a typical Townsend-to-glow discharge. A simple model is used to explain the non-normality of breakdown in the micro-gaps. The Townsend mechanism is suggested to control the breakdown process in this configuration before the gap reduces much smaller in air.

Linear electromagnetic excitation of an asymmetric low pressure capacitive discharge with unequal sheath widths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lieberman, M. A., E-mail: lieber@eecs.berkeley.edu; Lichtenberg, A. J.; Kawamura, E.

It is well-known that standing waves having radially center-high radio frequency (rf) voltage profiles exist in high frequency capacitive discharges. In this work, we determine the symmetric and antisymmetric radially propagating waves in a cylindrical capacitive discharge that is asymmetrically driven at the lower electrode by an rf voltage source. The discharge is modeled as a uniform bulk plasma which at lower frequencies has a thicker sheath at the smaller area powered electrode and a thinner sheath at the larger area grounded electrode. These are self-consistently determined at a specified density using the Child law to calculate sheath widths andmore » the electron power balance to calculate the rf voltage. The fields and the system resonant frequencies are determined. The center-to-edge voltage ratio on the powered electrode is calculated versus frequency, and central highs are found near the resonances. The results are compared with simulations in a similar geometry using a two-dimensional hybrid fluid-analytical code, giving mainly a reasonable agreement. The analytic model may be useful for finding good operating frequencies for a given discharge geometry and power.« less

Voltage and pace-capture mapping of linear ablation lesions overestimates chronic ablation gap size.

PubMed

O'Neill, Louisa; Harrison, James; Chubb, Henry; Whitaker, John; Mukherjee, Rahul K; Bloch, Lars Ølgaard; Andersen, Niels Peter; Dam, Høgni; Jensen, Henrik K; Niederer, Steven; Wright, Matthew; O'Neill, Mark; Williams, Steven E

2018-04-26

Conducting gaps in lesion sets are a major reason for failure of ablation procedures. Voltage mapping and pace-capture have been proposed for intra-procedural identification of gaps. We aimed to compare gap size measured acutely and chronically post-ablation to macroscopic gap size in a porcine model. Intercaval linear ablation was performed in eight Göttingen minipigs with a deliberate gap of ∼5 mm left in the ablation line. Gap size was measured by interpolating ablation contact force values between ablation tags and thresholding at a low force cut-off of 5 g. Bipolar voltage mapping and pace-capture mapping along the length of the line were performed immediately, and at 2 months, post-ablation. Animals were euthanized and gap sizes were measured macroscopically. Voltage thresholds to define scar were determined by receiver operating characteristic analysis as <0.56 mV (acutely) and <0.62 mV (chronically). Taking the macroscopic gap size as gold standard, error in gap measurements were determined for voltage, pace-capture, and ablation contact force maps. All modalities overestimated chronic gap size, by 1.4 ± 2.0 mm (ablation contact force map), 5.1 ± 3.4 mm (pace-capture), and 9.5 ± 3.8 mm (voltage mapping). Error on ablation contact force map gap measurements were significantly less than for voltage mapping (P = 0.003, Tukey's multiple comparisons test). Chronically, voltage mapping and pace-capture mapping overestimated macroscopic gap size by 11.9 ± 3.7 and 9.8 ± 3.5 mm, respectively. Bipolar voltage and pace-capture mapping overestimate the size of chronic gap formation in linear ablation lesions. The most accurate estimation of chronic gap size was achieved by analysis of catheter-myocardium contact force during ablation.

Automatic tuned MRI RF coil for multinuclear imaging of small animals at 3T.

PubMed

Muftuler, L Tugan; Gulsen, Gultekin; Sezen, Kumsal D; Nalcioglu, Orhan

2002-03-01

We have developed an MRI RF coil whose tuning can be adjusted automatically between 120 and 128 MHz for sequential spectroscopic imaging of hydrogen and fluorine nuclei at field strength 3 T. Variable capacitance (varactor) diodes were placed on each rung of an eight-leg low-pass birdcage coil to change the tuning frequency of the coil. The diode junction capacitance can be controlled by the amount of applied reverse bias voltage. Impedance matching was also done automatically by another pair of varactor diodes to obtain the maximum SNR at each frequency. The same bias voltage was applied to the tuning varactors on all rungs to avoid perturbations in the coil. A network analyzer was used to monitor matching and tuning of the coil. A Pentium PC controlled the analyzer through the GPIB bus. A code written in LABVIEW was used to communicate with the network analyzer and adjust the bias voltages of the varactors via D/A converters. Serially programmed D/A converter devices were used to apply the bias voltages to the varactors. Isolation amplifiers were used together with RF choke inductors to provide isolation between the RF coil and the DC bias lines. We acquired proton and fluorine images sequentially from a multicompartment phantom using the designed coil. Good matching and tuning were obtained at both resonance frequencies. The tuning and matching of the coil were changed from one resonance frequency to the other within 60 s. (c) 2002 Elsevier Science (USA).

Design and Varactors: Operational Considerations. A Reliability Study for Robust Planar GaAs

NASA Technical Reports Server (NTRS)

Maiwald, Frank; Schlecht, Erich; Ward, John; Lin, Robert; Leon, Rosa; Pearson, John; Mehdi, Imran

2003-01-01

Preliminary conclusions include: Limits for reverse currents cannot be set. Based on current data we want to avoid any reverse bias current. We know 1 micro-A is too high. Leakage current gets suppressed when operated at 120K. Migration and verification: a) Reverse Bias Voltage will be limited; b) Health check with I/V curve: 1) Minimal reverse voltage shall be x0.75 of the calculated voltage breakdown Vbr; 2) Degradation of the Reverse Bias voltage at given current will be used as indication of ESD incidents or other Damages (high RF power, heat); 3) Calculation of diodes parameter to verify initial health check result in forward direction. RF output power starts to degrade when diode I/V curve is very strongly degraded only. Experienced on 400GHz doubler and 200GHz doubler

Probe Measurements of Parameters of Streamers of Nanosecond Frequency Crown Discharge

NASA Astrophysics Data System (ADS)

Ponizovskiy, A. Z.; Gosteev, S. G.

2017-12-01

Investigations of the parameters of single streamers of nanosecond frequency corona discharge, creating a voluminous low-temperature plasma in extended coaxial electrode systems, are performed. Measurements of the parameters of streamers were made by an isolated probe situated on the outer grounded electrode. Streamers were generated under the action of voltage pulses with a front of 50-300 ns, duration of 100-600 ns, and amplitude up to 100 kV at the frequency of 50-1000 Hz. The pulse voltage, the total current of the corona, current per probe, and glow in the discharge gap were recorded in the experiments. It was established that, at these parameters of pulse voltage, streamers propagate at an average strength of the electric field of 4-10 kV/cm. Increasing the pulse amplitude leads to an increase in the number of streamers hitting the probe, an increase in the average charge of the head of a streamer, and, as a consequence, an increase in the total streamer current and the energy introduced into the gas. In the intervals up to 3 cm, streamer breakdown at an average field strength of 5-10 kV/cm is possible. In longer intervals, during the buildup of voltage after generation of the main pulse, RF breakdown is observed at E av ≈ 4 kV/cm.

Design and Implementation of RF Energy Harvesting System for Low-Power Electronic Devices

NASA Astrophysics Data System (ADS)

Uzun, Yunus

2016-08-01

Radio frequency (RF) energy harvester systems are a good alternative for energizing of low-power electronics devices. In this work, an RF energy harvester is presented to obtain energy from Global System for Mobile Communications (GSM) 900 MHz signals. The energy harvester, consisting of a two-stage Dickson voltage multiplier circuit and L-type impedance matching circuits, was designed, simulated, fabricated and tested experimentally in terms of its performance. Simulation and experimental works were carried out for various input power levels, load resistances and input frequencies. Both simulation and experimental works have been carried out for this frequency band. An efficiency of 45% is obtained from the system at 0 dBm input power level using the impedance matching circuit. This corresponds to the power of 450 μW and this value is sufficient for many low-power devices. The most important parameters affecting the efficiency of the RF energy harvester are the input power level, frequency band, impedance matching and voltage multiplier circuits, load resistance and the selection of diodes. RF energy harvester designs should be optimized in terms of these parameters.

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

2016-03-01

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits a high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

A Metamaterial-Inspired Approach to RF Energy Harvesting

NASA Astrophysics Data System (ADS)

Fowler, Clayton; Zhou, Jiangfeng

We demonstrate an RF energy harvesting rectenna design based on a metamaterial perfect absorber (MPA). With the embedded Schottky diodes, the rectenna converts captured RF energy to DC currents. The Fabry-Perot cavity resonance of the MPA greatly improves the amount of energy captured and hence improves the rectification efficiency. Furthermore, the FP resonance exhibits high Q-factor and significantly increases the voltage across the Schottky diodes. This leads to a factor of 16 improvement of RF-DC conversion efficiency at ambient intensity level.

Dual-functional on-chip AlGaAs/GaAs Schottky diode for RF power detection and low-power rectenna applications.

PubMed

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device's good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

PubMed Central

Hashim, Abdul Manaf; Mustafa, Farahiyah; Rahman, Shaharin Fadzli Abd; Rahman, Abdul Rahim Abdul

2011-01-01

A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I–V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable DC output voltage is obtained. The increment ratio of output voltage vs input power is 0.2 V/dBm for all tested frequencies, which is considered good enough for RF power detection. Power conversion efficiency up to 50% is obtained at frequency of 1 GHz and input power of 20 dBm with series connection between diode and load, which also shows the device’s good potential as a rectenna device with further improvement. The fabricated n-AlGaAs/GaAs Schottky diode thus provides a conduit for breakthrough designs for RF power detectors, as well as ultra-low power on-chip rectenna device technology to be integrated in nanosystems. PMID:22164066

RF control hardware design for CYCIAE-100 cyclotron

NASA Astrophysics Data System (ADS)

Yin, Zhiguo; Fu, Xiaoliang; Ji, Bin; Zhao, Zhenlu; Zhang, Tianjue; Li, Pengzhan; Wei, Junyi; Xing, Jiansheng; Wang, Chuan

2015-11-01

The Beijing Radioactive Ion-beam Facility project is being constructed by BRIF division of China Institute of Atomic Energy. In this project, a 100 MeV high intensity compact proton cyclotron is built for multiple applications. The first successful beam extraction of CYCIAE-100 cyclotron was done in the middle of 2014. The extracted proton beam energy is 100 MeV and the beam current is more than 20 μA. The RF system of the CYCIAE-100 cyclotron includes two half-wavelength cavities, two 100 kW tetrode amplifiers and power transmission line systems (all above are independent from each other) and two sets of Low Level RF control crates. Each set of LLRF control includes an amplitude control unit, a tuning control unit, a phase control unit, a local Digital Signal Process control unit and an Advanced RISC Machines based EPICS IOC unit. These two identical LLRF control crates share one common reference clock and take advantages of modern digital technologies (e.g. DSP and Direct Digital Synthesizer) to achieve closed loop voltage and phase regulations of the dee-voltage. In the beam commission, the measured dee-voltage stability of RF system is better than 0.1% and phase stability is better than 0.03°. The hardware design of the LLRF system will be reviewed in this paper.

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

NASA Astrophysics Data System (ADS)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

rf breakdown measurements in electron beam driven 200 GHz copper and copper-silver accelerating structures

DOE PAGES

Dal Forno, Massimo; Dolgashev, Valery; Bowden, Gordon; ...

2016-11-30

This study explores the physics of vacuum rf breakdowns in subterahertz high-gradient traveling-wave accelerating structures. We present the experimental results of rf tests of 200 GHz metallic accelerating structures, made of copper and copper-silver. These experiments were carried out at the Facility for Advanced Accelerator Experimental Tests (FACET) at the SLAC National Accelerator Laboratory. The rf fields were excited by the FACET ultrarelativistic electron beam. The traveling-wave structure is an open geometry, 10 cm long, composed of two halves separated by a gap. The rf frequency of the fundamental accelerating mode depends on the gap size and can be changedmore » from 160 to 235 GHz. When the beam travels off axis, a deflecting field is induced in addition to the longitudinal field. We measure the deflecting forces by observing the displacement of the electron bunch and use this measurement to verify the expected accelerating gradient. Furthermore, we present the first quantitative measurement of rf breakdown rates in 200 GHz metallic accelerating structures. The breakdown rate of the copper structure is 10 –2 per pulse, with a peak surface electric field of 500 MV/m and a rf pulse length of 0.3 ns, which at a relatively large gap of 1.5 mm, or one wavelength, corresponds to an accelerating gradient of 56 MV/m. For the same breakdown rate, the copper-silver structure has a peak electric field of 320 MV/m at a pulse length of 0.5 ns. For a gap of 1.1 mm, or 0.74 wavelengths, this corresponds to an accelerating gradient of 50 MV/m.« less

A novel multi-actuation CMOS RF MEMS switch

NASA Astrophysics Data System (ADS)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

FDSOI 28nm performances study for RF energy scavenging

NASA Astrophysics Data System (ADS)

Rochefeuille, E.; Alicalapa, F.; Douyère, A.; Vuong, T. P.

2018-03-01

This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.

Gap cycling for SWIFT.

PubMed

Corum, Curtis A; Idiyatullin, Djaudat; Snyder, Carl J; Garwood, Michael

2015-02-01

SWIFT (SWeep Imaging with Fourier Transformation) is a non-Cartesian MRI method with unique features and capabilities. In SWIFT, radiofrequency (RF) excitation and reception are performed nearly simultaneously, by rapidly switching between transmit and receive during a frequency-swept RF pulse. Because both the transmitted pulse and data acquisition are simultaneously amplitude-modulated in SWIFT (in contrast to continuous RF excitation and uninterrupted data acquisition in more familiar MRI sequences), crosstalk between different frequency bands occurs in the data. This crosstalk leads to a "bulls-eye" artifact in SWIFT images. We present a method to cancel this interband crosstalk by cycling the pulse and receive gap positions relative to the un-gapped pulse shape. We call this strategy "gap cycling." We carry out theoretical analysis, simulation and experiments to characterize the signal chain, resulting artifacts, and their elimination for SWIFT. Theoretical analysis reveals the mechanism for gap-cycling's effectiveness in canceling interband crosstalk in the received data. We show phantom and in vivo results demonstrating bulls-eye artifact free images. Gap cycling is an effective method to remove bulls-eye artifact resulting from interband crosstalk in SWIFT data. © 2014 Wiley Periodicals, Inc.

Influence of the electrode gap separation on the pseudospark-sourced electron beam generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, J., E-mail: junping.zhao@qq.com; State Key Laboratory of Electrical Insulation and Power Equipment, West Xianning Road, Xi'an 710049; Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 0NG Scotland

Pseudospark-sourced electron beam is a self-focused intense electron beam which can propagate without any external focusing magnetic field. This electron beam can drive a beam-wave interaction directly or after being post-accelerated. It is especially suitable for terahertz radiation generation due to the ability of a pseudospark discharge to produce small size in the micron range and very high current density and bright electron beams. In this paper, a single-gap pseudospark discharge chamber has been built and tested with several electrode gap separations to explore the dependence of the pseudospark-sourced electron beam current on the discharge voltage and the electrode gapmore » separation. Experimental results show that the beam pulses have similar pulse width and delay time from the distinct drop of the applied voltage for smaller electrode gap separations but longer delay time for the largest gap separation used in the experiment. It has been found that the electron beam only starts to occur when the charging voltage is above a certain value, which is defined as the starting voltage of the electron beam. The starting voltage is different for different electrode gap separations and decreases with increasing electrode gap separation in our pseudospark discharge configuration. The electron beam current increases with the increasing discharge voltage following two tendencies. Under the same discharge voltage, the configuration with the larger electrode gap separation will generate higher electron beam current. When the discharge voltage is higher than 10 kV, the beam current generated at the electrode gap separation of 17.0 mm, is much higher than that generated at smaller gap separations. The ionization of the neutral gas in the main gap is inferred to contribute more to the current increase with increasing electrode gap separation.« less

E-H mode transition of a high-power inductively coupled plasma torch at atmospheric pressure with a metallic confinement tube

NASA Astrophysics Data System (ADS)

Altenberend, Jochen; Chichignoud, Guy; Delannoy, Yves

2012-08-01

Inductively coupled plasma torches need high ignition voltages for the E-H mode transition and are therefore difficult to operate. In order to reduce the ignition voltage of an RF plasma torch with a metallic confinement tube the E-H mode transition was studied. A Tesla coil was used to create a spark discharge and the E-H mode transition of the plasma was then filmed using a high-speed camera. The electrical potential of the metallic confinement tube was measured using a high-voltage probe. It was found that an arc between the grounded injector and the metallic confinement tube is maintained by the electric field (E-mode). The transition to H-mode occurred at high magnetic fields when the arc formed a loop. The ignition voltage could be reduced by connecting the metallic confinement tube with a capacitor to the RF generator.

Model and particle-in-cell simulation of ion energy distribution in collisionless sheath

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Zhuwen, E-mail: zzwwdxy@gznc.edu.cn; Key Laboratory of Photoelectron Materials Design and Simulation in Guizhou Province, Guiyang 550018; Scientific Research Innovation Team in Plasma and Functional Thin Film Materials in Guizhou Province, Guiyang 550018

2015-06-15

In this paper, we propose a self-consistent theoretical model, which is described by the ion energy distributions (IEDs) in collisionless sheaths, and the analytical results for different combined dc/radio frequency (rf) capacitive coupled plasma discharge cases, including sheath voltage errors analysis, are compared with the results of numerical simulations using a one-dimensional plane-parallel particle-in-cell (PIC) simulation. The IEDs in collisionless sheaths are performed on combination of dc/rf voltage sources electrodes discharge using argon as the process gas. The incident ions on the grounded electrode are separated, according to their different radio frequencies, and dc voltages on a separated electrode, themore » IEDs, and widths of energy in sheath and the plasma sheath thickness are discussed. The IEDs, the IED widths, and sheath voltages by the theoretical model are investigated and show good agreement with PIC simulations.« less

Spark gap with low breakdown voltage jitter

DOEpatents

Rohwein, G.J.; Roose, L.D.

1996-04-23

Novel spark gap devices and electrodes are disclosed. The novel spark gap devices and electrodes are suitable for use in a variety of spark gap device applications. The shape of the electrodes gives rise to local field enhancements and reduces breakdown voltage jitter. Breakdown voltage jitter of approximately 5% has been measured in spark gaps according the invention. Novel electrode geometries and materials are disclosed. 13 figs.

Meter circuit for tuning RF amplifiers

NASA Technical Reports Server (NTRS)

Longthorne, J. E.

1973-01-01

Circuit computes and indicates efficiency of RF amplifier as inputs and other parameters are varied. Voltage drop across internal resistance of ammeter is amplified by operational amplifier and applied to one multiplier input. Other input is obtained through two resistors from positive terminal of power supply.

Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, January-March 31, 1980

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul, W

1980-06-01

The effect of a variety of plasma cleaning procedures on the level of bulk and interfacial contaminants in the films is analyzed by secondary ion mass spectrometry. Bulk levels of 0 have been reduced considerably by N/sub 2/ plasma cleaning, but no reproducible reductions in interfacial contamination have been achieved. A method is described of determining the gap state density N(epsilon) of a-Si:H from field effect, in which no assumptions are made about the form of the band bending in the semiconductor. The problem is reduced to three successive integrals over an assumed N(epsilon) by change of variable from distancemore » to applied voltage and the best fit to the experimental data is obtained by iteration of the assumed state density. The method is shown to be no less rigorous and considerably more economical than the recent analysis of Goodman, Fritzsche and Ozaki. In addition, an experimental means of determining the flat-band voltage to within 5% of the maximum gate voltage V/sub g/ used is demonstrated, by finding the value of V/sub g/ for which (kT/e)dlog I/sub SD//dV/sub g/ is independent of temperature.« less

The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

NASA Astrophysics Data System (ADS)

Wiebold, Matthew D.

Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn < 1 mTorr) expanding argon plasmas in the Madison Helicon Experiment. The potential gradient leads to ion acceleration exceeding Ei ≈ 7 kTe in some cases. Up to 1 kW of 13.56 MHz RF power is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field up to 1 kG. An RPA measures the IEDF and an emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in electron density as RF power is increased. In the capacitive mode, large fluctuations of the plasma potential (Vp--p ≳ 140 V, Vp--p/Vp ≈ 150%) exist at the RF frequency, leading to formation of a self-bias voltage. The mobile electrons can flow from the upstream region during an RF cycle whereas ions cannot, leading to an initial imbalance of flux, and the self-bias voltage builds as a result. The plasma potential in the expansion chamber is held near the floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

Voltage controlled oscillator is easily aligned, has low phase noise

NASA Technical Reports Server (NTRS)

Sydnor, R. L.

1965-01-01

Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dal Forno, Massimo; Dolgashev, Valery; Bowden, Gordon

This study explores the physics of vacuum rf breakdowns in subterahertz high-gradient traveling-wave accelerating structures. We present the experimental results of rf tests of 200 GHz metallic accelerating structures, made of copper and copper-silver. These experiments were carried out at the Facility for Advanced Accelerator Experimental Tests (FACET) at the SLAC National Accelerator Laboratory. The rf fields were excited by the FACET ultrarelativistic electron beam. The traveling-wave structure is an open geometry, 10 cm long, composed of two halves separated by a gap. The rf frequency of the fundamental accelerating mode depends on the gap size and can be changedmore » from 160 to 235 GHz. When the beam travels off axis, a deflecting field is induced in addition to the longitudinal field. We measure the deflecting forces by observing the displacement of the electron bunch and use this measurement to verify the expected accelerating gradient. Furthermore, we present the first quantitative measurement of rf breakdown rates in 200 GHz metallic accelerating structures. The breakdown rate of the copper structure is 10 –2 per pulse, with a peak surface electric field of 500 MV/m and a rf pulse length of 0.3 ns, which at a relatively large gap of 1.5 mm, or one wavelength, corresponds to an accelerating gradient of 56 MV/m. For the same breakdown rate, the copper-silver structure has a peak electric field of 320 MV/m at a pulse length of 0.5 ns. For a gap of 1.1 mm, or 0.74 wavelengths, this corresponds to an accelerating gradient of 50 MV/m.« less

Power supply system for negative ion source at IPR

NASA Astrophysics Data System (ADS)

Gahlaut, Agrajit; Sonara, Jashwant; Parmar, K. G.; Soni, Jignesh; Bandyopadhyay, M.; Singh, Mahendrajit; Bansal, Gourab; Pandya, Kaushal; Chakraborty, Arun

2010-02-01

The first step in the Indian program on negative ion beams is the setting up of Negative ion Experimental Assembly - RF based, where 100 kW of RF power shall be coupled to a plasma source producing plasma of density ~5 × 1012 cm-3, from which ~ 10 A of negative ion beam shall be produced and accelerated to 35 kV, through an electrostatic ion accelerator. The experimental system is modelled similar to the RF based negative ion source, BATMAN presently operating at IPP, Garching, Germany. The mechanical system for Negative Ion Source Assembly is close to the IPP source, remaining systems are designed and procured principally from indigenous sources, keeping the IPP configuration as a base line. High voltage (HV) and low voltage (LV) power supplies are two key constituents of the experimental setup. The HV power supplies for extraction and acceleration are rated for high voltage (~15 to 35kV), and high current (~ 15 to 35A). Other attributes are, fast rate of voltage rise (< 5ms), good regulation (< ±1%), low ripple (< ±2%), isolation (~50kV), low energy content (< 10J) and fast cut-off (< 100μs). The low voltage (LV) supplies required for biasing and providing heating power to the Cesium oven and the plasma grids; have attributes of low ripple, high stability, fast and precise regulation, programmability and remote operation. These power supplies are also equipped with over-voltage, over-current and current limit (CC Mode) protections. Fault diagnostics, to distinguish abnormal rise in currents (breakdown faults) with over-currents is enabled using fast response breakdown and over-current protection scheme. To restrict the fault energy deposited on the ion source, specially designed snubbers are implemented in each (extraction and acceleration) high voltage path to swap the surge energy. Moreover, the monitoring status and control signals from these power supplies are required to be electrically (~ 50kV) isolated from the system. The paper shall present the design basis, topology selection, manufacturing, testing, commissioning, integration and control strategy of these HVPS. A complete power interconnection scheme, which includes all protective devices and measuring devices, low & high voltage power supplies, monitoring and control signals etc. shall also be discussed. The paper also discusses the protocols involved in grounding and shielding, particularly in operating the system in RF environment.

Automated qualification and analysis of protective spark gaps for DC accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Banerjee, Srutarshi; Rajan, Rehim N.; Dewangan, S.

2014-07-01

Protective spark gaps are used in the high voltage multiplier column of a 3 MeV DC Accelerator to prevent excessive voltage build-ups. Precise gap of 5 mm is maintained between the electrodes in these spark gaps for obtaining 120 kV± 5 kV in 6 kg/cm{sup 2} SF{sub 6} environment which is the dielectric medium. There are 74 such spark gaps used in the multiplier. Each spark gap has to be qualified for electrical performance before fitting in the accelerator to ensure reliable operation. As the breakdown voltage stabilizes after a large number of sparks between the electrodes, the qualification processmore » becomes time consuming and cumbersome. For qualifying large number of spark gaps an automatic breakdown analysis setup has been developed. This setup operates in air, a dielectric medium. The setup consists of a flyback topology based high voltage power supply with maximum rating of 25 kV. This setup works in conjunction with spark detection and automated shutdown circuit. The breakdown voltage is sensed using a peak detector circuit. The voltage breakdown data is recorded and statistical distribution of the breakdown voltage has been analyzed. This paper describes details of the diagnostics and the spark gap qualification process based on the experimental data. (author)« less

Unified Model of the rf Plasma Sheath, Part II

NASA Astrophysics Data System (ADS)

Riley, Merle

1996-10-01

By developing an approximation to the first integral of the Poisson equation, one can obtain solutions for the current-voltage characteristics of an rf plasma sheath that are valid over the whole range of inertial response of the ions to an imposed rf voltage or current. (M.E.Riley, 1995 GEC, abstract QA5, published in Bull. Am. Phys. Soc., 40, 1587 (1995).) The theory has been shown to adequately reproduce current-voltage characteristics of two extreme cases (M.A. Lieberman, IEEE Trans. Plasma Sci. 16, 638 (1988). A. Metze, D.W. Ernie, and H.J.Oskam, J.Appl.Phys., 60, 3081 (1986).) of ion response. In this work I show the effect of different conventions for connecting the sheath model to the bulk plasma. Modifications of the Mach number and a finite electric field at the Bohm point are natural choices. The differences are examined for a sheath in a high density Ar plasma and are found to be insignificant. A theoretical argument favors the electric field modification. *Work performed at Sandia National Labs and supported by US DoE under contract DE-AC04-94AL85000.

New ion trap for atomic frequency standard applications

NASA Technical Reports Server (NTRS)

Prestage, J. D.; Dick, G. J.; Maleki, L.

1989-01-01

A novel linear ion trap that permits storage of a large number of ions with reduced susceptibility to the second-order Doppler effect caused by the radio frequency (RF) confining fields has been designed and built. This new trap should store about 20 times the number of ions a conventional RF trap stores with no corresponding increase in second-order Doppler shift from the confining field. In addition, the sensitivity of this shift to trapping parameters, i.e., RF voltage, RF frequency, and trap size, is greatly reduced.

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce

2014-09-15

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. Thesemore » results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.« less

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

High-voltage R-F feedthrough bushing

DOEpatents

Grotz, G.F.

1982-09-03

Described is a multi-element, high voltage radio frequency bushing for transmitting rf energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

High voltage RF feedthrough bushing

DOEpatents

Grotz, Glenn F.

1984-01-01

Described is a multi-element, high voltage radio frequency bushing for trmitting RF energy to an antenna located in a vacuum container. The bushing includes a center conductor of complex geometrical shape, an outer coaxial shield conductor, and a thin-walled hollow truncated cone insulator disposed between central and outer conductors. The shape of the center conductor, which includes a reverse curvature portion formed of a radially inwardly directed shoulder and a convex portion, controls the uniformity of the axial surface gradient on the insulator cone. The outer shield has a first substantially cylindrical portion and a second radially inwardly extending truncated cone portion.

A complete electrical shock hazard classification system and its application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gordon, Lloyd; Cartelli, Laura; Graham, Nicole

Current electrical safety standards evolved to address the hazards of 60-Hz power that are faced primarily by electricians, linemen, and others performing facility and utility work. As a result, this leaves a substantial gap in the management of electrical hazards in Research and Development (R&D) and specialized high voltage and high power equipment. We find substantial use of direct current (dc) electrical energy, and the use of capacitors, inductors, batteries, and radiofrequency (RF) power. The electrical hazards of these forms of electricity and their systems are different than for 50/60 Hz power. This paper proposes a method of classifying allmore » of the electrical shock hazards found in all types of R&D and utilization equipment. Examples of the variation of these hazards from NFPA 70E include (a) high voltage can be harmless, if the available current is sufficiently low, (b) low voltage can be harmful if the available current/power is high, (c) high voltage capacitor hazards are unique and include severe reflex action, affects on the heart, and tissue damage, and (d) arc flash hazard analysis for dc and capacitor systems are not provided in existing standards. This work has led to a comprehensive electrical hazard classification system that is based on various research conducted over the past 100 years, on analysis of such systems in R&D, and on decades of experience. Lastly, the new comprehensive electrical shock hazard classification system uses a combination of voltage, shock current available, fault current available, power, energy, and waveform to classify all forms of electrical hazards.« less

A complete electrical shock hazard classification system and its application

DOE PAGES

Gordon, Lloyd; Cartelli, Laura; Graham, Nicole

2018-02-08

Current electrical safety standards evolved to address the hazards of 60-Hz power that are faced primarily by electricians, linemen, and others performing facility and utility work. As a result, this leaves a substantial gap in the management of electrical hazards in Research and Development (R&D) and specialized high voltage and high power equipment. We find substantial use of direct current (dc) electrical energy, and the use of capacitors, inductors, batteries, and radiofrequency (RF) power. The electrical hazards of these forms of electricity and their systems are different than for 50/60 Hz power. This paper proposes a method of classifying allmore » of the electrical shock hazards found in all types of R&D and utilization equipment. Examples of the variation of these hazards from NFPA 70E include (a) high voltage can be harmless, if the available current is sufficiently low, (b) low voltage can be harmful if the available current/power is high, (c) high voltage capacitor hazards are unique and include severe reflex action, affects on the heart, and tissue damage, and (d) arc flash hazard analysis for dc and capacitor systems are not provided in existing standards. This work has led to a comprehensive electrical hazard classification system that is based on various research conducted over the past 100 years, on analysis of such systems in R&D, and on decades of experience. Lastly, the new comprehensive electrical shock hazard classification system uses a combination of voltage, shock current available, fault current available, power, energy, and waveform to classify all forms of electrical hazards.« less

Rf-assisted current startup in FED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Peng, Y.K.M.; Kammash, T.

1981-01-01

Auxiliary rf heating of electrons before and during the current rise phase in FED is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at approximately 90 GHz is used to create a small volume of high conductivity plasma near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub o/ approximately 0.2-0.4 m) current channel to be established with a relatively low initial loop voltage (<25 V). During the subsequent plasma expansionmore » and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. The physics models used for analyzing the UHR heating and current rise phases are also discussed.« less

Ring design of the Prague synchrotron for cancer therapy

NASA Astrophysics Data System (ADS)

Molodozhentsev, A.; Makoveev, V.; Minashkin, V.; Shevtsov, V.; Sidorov, G.; Prokesh, K.; Sedlak, J.; Kuzmiak, M.

1998-04-01

The paper presents main elements of a dedicated proton synchrotron for hadron therapy. The beam parameters for active scanning of tumours are discussed. The output energy of the beam should be variable in the range 60-220 MeV. The average current of the proton beam is equal to 10 nA. The repetition rate of the accelerator is chosen of 1 Hz to get a spill time for slow extraction of about 500 ms. The timing cycle of the accelerator including the quasi-adiabatic capture process and acceleration is described. The RF gymnastics is utilized to prepare the unbunched beam for slow extraction. The magnetic elements of the ring, compact RF and VCO systems are presented in the paper. The maximum magnet field of the dipole magnet should be 1.2 T and the maximum magnetic field on the pole of the quadrupole lenses should be less than 1 T. The resonator should work on the first harmonic with a frequency from 1.298 MHz till 4.804 MHz. The length of the resonator should be less than 1 m. The maximum voltage on the accelerator gap should be about 2 kV.

Optimization of direct current-enhanced radiofrequency ablation: an ex vivo study.

PubMed

Tanaka, Toshihiro; Isfort, Peter; Bruners, Philipp; Penzkofer, Tobias; Kichikawa, Kimihiko; Schmitz-Rode, Thomas; Mahnken, Andreas H

2010-10-01

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, and mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 +/- 3.9 vs. 26.5 +/- 4.0 ml), but ablation duration was significantly decreased (296 +/- 85 s vs. 423 +/- 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.

Optimization of Direct Current-Enhanced Radiofrequency Ablation: An Ex Vivo Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, Toshihiro, E-mail: toshihir@bf6.so-net.ne.jp; Isfort, Peter; Bruners, Philipp

2010-10-15

The purpose of this study was to investigate the optimal setting for radiofrequency (RF) ablation combined with direct electrical current (DC) ablation in ex vivo bovine liver. An electrical circuit combining a commercially available RF ablation system with DC was developed. The negative electrode of a rectifier that provides DC was connected to a 3-cm multitined expandable RF probe. A 100-mH inductor was used to prevent electrical leakage from the RF generator. DC was applied for 15 min and followed by RF ablation in freshly excised bovine livers. Electric current was measured by an ammeter. Coagulation volume, ablation duration, andmore » mean amperage were assessed for various DC voltages (no DC, 2.2, 4.5, and 9.0 V) and different RF ablation protocols (stepwise increase from 40 to 80 W, 40 W fixed, and 80 W fixed). Results were compared using Kruskal-Wallis and Mann-Whitney U test. Applying DC with 4.5 or 9.0 V, in combination with 40 W fixed or a stepwise increase of RF energy, resulted in significantly increased zone of ablation size compared with 2.2 V or no DC (P = 0.009). At 4.5 V DC, the stepwise increase of RF energy resulted in the same necrosis size as a 40 W fixed protocol (26.6 {+-} 3.9 vs. 26.5 {+-} 4.0 ml), but ablation duration was significantly decreased (296 {+-} 85 s vs. 423 {+-} 104 s; P = 0.028). Mean amperage was significantly lower at 4.5 V compared with 9.0 V (P = 0.028). Combining a stepwise increase of RF energy with a DC voltage of 4.5 V is most appropriate to increase coagulation volume and to minimize procedure time.« less

Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting

DOEpatents

Williamson, Rodney L.; Zanner, Frank J.; Grose, Stephen M.

1998-01-01

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap.

Numerical simulation of operation modes in atmospheric pressure uniform barrier discharge excited by a saw-tooth voltage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Xuechen; Niu Dongying; Yin Zengqian

2012-08-15

The characteristics of dielectric barrier discharge excited by a saw-tooth voltage are simulated in atmospheric pressure helium based on a one-dimensional fluid model. A stepped discharge is obtained per half voltage cycle with gas gap width less than 2 mm by the simulation, which is different to the pulsed discharge excited by a sinusoidal voltage. For the stepped discharge, the plateau duration increases with increasing the voltage amplitude and decreasing the gas gap. Therefore, uniform discharge with high temporal duty ratio can be realized with small gap through increasing the voltage amplitude. The maximal densities of both electron and ionmore » appear near the anode and the electric field is almost uniformly distributed along the gap, which indicates that the stepped discharge belongs to a Townsend mode. In contrast to the stepped discharge with small gas gap, a pulsed discharge can be obtained with large gas gap. Through analyzing the spatial density distributions of electron and ion and the electric field, the pulsed discharge is in a glow mode. The voltage-current (V-I) characteristics are analyzed for the above mentioned discharges under different gas gaps, from which the different discharge modes are verified.« less

The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

NASA Astrophysics Data System (ADS)

Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

2017-12-01

Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

Arc voltage distribution skewness as an indicator of electrode gap during vacuum arc remelting

DOEpatents

Williamson, R.L.; Zanner, F.J.; Grose, S.M.

1998-01-13

The electrode gap of a VAR is monitored by determining the skewness of a distribution of gap voltage measurements. A decrease in skewness indicates an increase in gap and may be used to control the gap. 4 figs.

Three-dimensional relativistic field-electron interaction in a multicavity high-power klystron. 1: Basic theory

NASA Technical Reports Server (NTRS)

Kosmahl, H. G.

1982-01-01

A theoretical investigation of three dimensional relativistic klystron action is described. The relativistic axisymmetric equations of motion are derived from the time-dependent Lagrangian function for a charged particle in electromagnetic fields. An analytical expression of the fringing RF electric and magnetic fields within and in the vicinity of the interaction gap and the space-charge forces between axially and radially elastic deformable rings of charges are both included in the formulation. This makes an accurate computation of electron motion through the tunnel of the cavities and the drift tube spaces possible. Method of analysis is based on Lagrangian formulation. Bunching is computed using a disk model of electron stream in which the electron stream is divided into axisymmetric disks of equal charge and each disk is assumed to consist of a number of concentric rings of equal charges. The Individual representative groups of electrons are followed through the interaction gaps and drift tube spaces. Induced currents and voltages in interacting cavities are calculated by invoking the Shockley-Ramo theorem.

Constant voltage electro-slag remelting control

DOEpatents

Schlienger, Max E.

1996-01-01

A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an eletrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable.

The direct injection of intense ion beams from a high field electron cyclotron resonance ion source into a radio frequency quadrupole

NASA Astrophysics Data System (ADS)

Rodrigues, G.; Becker, R.; Hamm, R. W.; Baskaran, R.; Kanjilal, D.; Roy, A.

2014-02-01

The ion current achievable from high intensity ECR sources for highly charged ions is limited by the high space charge. This makes classical extraction systems for the transport and subsequent matching to a radio frequency quadrupole (RFQ) accelerator less efficient. The direct plasma injection (DPI) method developed originally for the laser ion source avoids these problems and uses the combined focusing of the gap between the ion source and the RFQ vanes (or rods) and the focusing of the rf fields from the RFQ penetrating into this gap. For high performance ECR sources that use superconducting solenoids, the stray magnetic field of the source in addition to the DPI scheme provides focusing against the space charge blow-up of the beam. A combined extraction/matching system has been designed for a high performance ECR ion source injecting into an RFQ, allowing a total beam current of 10 mA from the ion source for the production of highly charged 238U40+ (1.33 mA) to be injected at an ion source voltage of 60 kV. In this design, the features of IGUN have been used to take into account the rf-focusing of an RFQ channel (without modulation), the electrostatic field between ion source extraction and the RFQ vanes, the magnetic stray field of the ECR superconducting solenoid, and the defocusing space charge of an ion beam. The stray magnetic field is shown to be critical in the case of a matched beam.

The direct injection of intense ion beams from a high field electron cyclotron resonance ion source into a radio frequency quadrupole.

PubMed

Rodrigues, G; Becker, R; Hamm, R W; Baskaran, R; Kanjilal, D; Roy, A

2014-02-01

The ion current achievable from high intensity ECR sources for highly charged ions is limited by the high space charge. This makes classical extraction systems for the transport and subsequent matching to a radio frequency quadrupole (RFQ) accelerator less efficient. The direct plasma injection (DPI) method developed originally for the laser ion source avoids these problems and uses the combined focusing of the gap between the ion source and the RFQ vanes (or rods) and the focusing of the rf fields from the RFQ penetrating into this gap. For high performance ECR sources that use superconducting solenoids, the stray magnetic field of the source in addition to the DPI scheme provides focusing against the space charge blow-up of the beam. A combined extraction/matching system has been designed for a high performance ECR ion source injecting into an RFQ, allowing a total beam current of 10 mA from the ion source for the production of highly charged (238)U(40+) (1.33 mA) to be injected at an ion source voltage of 60 kV. In this design, the features of IGUN have been used to take into account the rf-focusing of an RFQ channel (without modulation), the electrostatic field between ion source extraction and the RFQ vanes, the magnetic stray field of the ECR superconducting solenoid, and the defocusing space charge of an ion beam. The stray magnetic field is shown to be critical in the case of a matched beam.

Investigation of the flatband voltage (V(FB)) shift of Al2O3 on N2 plasma treated Si substrate.

PubMed

Kim, Hyungchul; Lee, Jaesang; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2013-09-01

The relationships between the physical and electrical characteristics of films treated with N2 plasma followed by forming gas annealing (FGA) were investigated. The Si substrates were treated with various radio frequency (RF) power levels under a N2 ambient. Al2O3 films were then deposited on Si substrates via remote plasma atomic-layer deposition. The plasma characteristics, such as the radical and ion density, were investigated using optical emission spectroscopy. Through X-ray photoelectron spectroscopy, the chemical-bonding configurations of the samples treated with N2 plasma and FGA were examined. The quantity of Si-N bonds increased as the RF power was increased, and Si--O--N bonds were generated after FGA. The flatband voltage (VFB) was shifted in the negative direction with increasing RF power, but the VFB values of the samples after FGA shifted in the positive direction due to the formation of Si--O--N bonds. N2 plasma treatment with various RF power levels slightly increased the leakage current due to the generation of defect sites.

FinFET and UTBB for RF SOI communication systems

NASA Astrophysics Data System (ADS)

Raskin, Jean-Pierre

2016-11-01

Performance of RF integrated circuit (IC) is directly linked to the analog and high frequency characteristics of the transistors, the quality of the back-end of line process as well as the electromagnetic properties of the substrate. Thanks to the introduction of the trap-rich high-resistivity Silicon-on-Insulator (SOI) substrate on the market, the ICs requirements in term of linearity are fulfilled. Today partially depleted SOI MOSFET is the mainstream technology for RF SOI systems. Future generations of mobile communication systems will require transistors with better high frequency performance at lower power consumption. The advanced MOS transistors in competition are FinFET and Ultra Thin Body and Buried oxide (UTBB) SOI MOSFETs. Both devices have been intensively studied these last years. Most of the reported data concern their digital performance. In this paper, their analog/RF behavior is described and compared. Both show similar characteristics in terms of transconductance, Early voltage, voltage gain, self-heating issue but UTBB outperforms FinFET in terms of cutoff frequencies thanks to their relatively lower fringing parasitic capacitances.

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System

PubMed Central

Mustafa, Farahiyah; Hashim, Abdul Manaf

2014-01-01

We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved. It was found that the reduction of series resistance and parallel connection of diode and load tend to lead to the improvement of RF-to-DC conversion efficiency. Under direct irradiation from antenna-to-antenna method, the output voltage of 35 mV was still obtainable for the distance of 8 cm between both antennas in spite of large mismatch in the resonant frequency between the diode and the connected antenna. Higher output voltage in volt range is expected to be achievable for the well-matching condition. The proposed on-chip AlGaAs/GaAs HEMT Schottky diode and antenna seems to be a promising candidate to be used for application in proximity communication system as a wireless low power source as well as a highly sensitive RF detector. PMID:24561400

Electron Gun For Multiple Beam Klystron Using Magnetic Focusing

DOEpatents

Ives, R. Lawrence; Miram, George; Krasnykh, Anatoly

2004-07-27

An RF device comprising a plurality of drift tubes, each drift tube having a plurality of gaps defining resonant cavities, is immersed in an axial magnetic field. RF energy is introduced at an input RF port at one of these resonant cavities and collected at an output RF port at a different RF cavity. A plurality of electron beams passes through these drift tubes, and each electron beam has an individual magnetic shaping applied which enables confined beam transport through the drift tubes.

The phototron: A light to RF energy conversion device

NASA Technical Reports Server (NTRS)

Freeman, J. W.; Simons, S.

1982-01-01

The phototron, a photoelectric device that converts light to radio frequency energy, is described. It is a vacuum tube, free electron, device that is mechanically similar to a reflex klystron with the hot filament cathode replaced by a large area photocathode. The device can operate either with an external voltage source used to accelerate the photoelectrons or with zero bias voltage; in which case the photokinetic energy of the electrons sustains the R.F. oscillations in the tuned R.F. circuit. One basic design of the phototron was tested. Frequencies as high as about 1 GHz and an overall efficiency of about 1% in the biased mode were obtained. In the unbiased mode, the frequencies of operation and efficiences are considerably lower. Success with test model suggests that considerable improvements are possible through design refinements. One such design refinement is the reduction of the length of the electron flight path.

Discontinuous model with semi analytical sheath interface for radio frequency plasma

NASA Astrophysics Data System (ADS)

Miyashita, Masaru

2016-09-01

Sumitomo Heavy Industries, Ltd. provide many products utilizing plasma. In this study, we focus on the Radio Frequency (RF) plasma source by interior antenna. The plasma source is expected to be high density and low metal contamination. However, the sputtering the antenna cover by high energy ion from sheath voltage still have been problematic. We have developed the new model which can calculate sheath voltage wave form in the RF plasma source for realistic calculation time. This model is discontinuous that electronic fluid equation in plasma connect to usual passion equation in antenna cover and chamber with semi analytical sheath interface. We estimate the sputtering distribution based on calculated sheath voltage waveform by this model, sputtering yield and ion energy distribution function (IEDF) model. The estimated sputtering distribution reproduce the tendency of experimental results.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

NASA Astrophysics Data System (ADS)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

High power RF coaxial switch

NASA Technical Reports Server (NTRS)

Caro, E. R. (Inventor)

1980-01-01

A coaxial switch capable of operating in a vacuum with high RF power in the 1.2 GHz range without multipactor breakdown, and without relying on pressurization with an inert gas is described. The RF carrying conductors of the switch are surrounded with a high grade solid dielectric, thus eliminating any gaps in which electrons can accelerate.

Thermal latency adds to lesion depth after application of high-power short-duration radiofrequency energy: Results of a computer-modeling study.

PubMed

Irastorza, Ramiro M; d'Avila, Andre; Berjano, Enrique

2018-02-01

The use of ultra-short RF pulses could achieve greater lesion depth immediately after the application of the pulse due to thermal latency. A computer model of irrigated-catheter RF ablation was built to study the impact of thermal latency on the lesion depth. The results showed that the shorter the RF pulse duration (keeping energy constant), the greater the lesion depth during the cooling phase. For instance, after a 10-second pulse, lesion depth grew from 2.05 mm at the end of the pulse to 2.39 mm (17%), while after an ultra-short RF pulse of only 1 second the extra growth was 37% (from 2.22 to 3.05 mm). Importantly, short applications resulted in deeper lesions than long applications (3.05 mm vs. 2.39 mm, for 1- and 10-second pulse, respectively). While shortening the pulse duration produced deeper lesions, the associated increase in applied voltage caused overheating in the tissue: temperatures around 100 °C were reached at a depth of 1 mm in the case of 1- and 5-second pulses. However, since the lesion depth increased during the cooling period, lower values of applied voltage could be applied in short durations in order to obtain lesion depths similar to those in longer durations while avoiding overheating. The thermal latency phenomenon seems to be the cause of significantly greater lesion depth after short-duration high-power RF pulses. Balancing the applied total energy when the voltage and duration are changed is not the optimal strategy since short pulses can also cause overheating. © 2017 Wiley Periodicals, Inc.

Robotic assistance and general anaesthesia improve catheter stability and increase signal attenuation during atrial fibrillation ablation.

PubMed

Malcolme-Lawes, Louisa C; Lim, Phang Boon; Koa-Wing, Michael; Whinnett, Zachary I; Jamil-Copley, Shahnaz; Hayat, Sajad; Francis, Darrel P; Kojodjojo, Pipin; Davies, D Wyn; Peters, Nicholas S; Kanagaratnam, Prapa

2013-01-01

Recurrent arrhythmias after ablation procedures are often caused by recovery of ablated tissue. Robotic catheter manipulation systems increase catheter tip stability which improves energy delivery and could produce more transmural lesions. We tested this assertion using bipolar voltage attenuation as a marker of lesion quality comparing robotic and manual circumferential pulmonary vein ablation for atrial fibrillation (AF). Twenty patients were randomly assigned to robotic or manual AF ablation at standard radiofrequency (RF) settings for our institution (30 W 60 s manual, 25 W 30 s robotic, R30). A separate group of 10 consecutive patients underwent robotic ablation at increased RF duration, 25 W for 60 s (R60). Lesions were marked on an electroanatomic map before and after ablation to measure distance moved and change in bipolar electrogram amplitude during RF. A total of 1108 lesions were studied (761 robotic, 347 manual). A correlation was identified between voltage attenuation and catheter movement during RF (Spearman's rho -0.929, P < 0.001). The ablation catheter was more stable during robotic RF; 2.9 ± 2.3 mm (R30) and 2.6 ± 2.2 mm (R60), both significantly less than the manual group (4.3 ± 3.0 mm, P < 0.001). Despite improved stability, there was no difference in signal attenuation between the manual and R30 group. However, there was increased signal attenuation in the R60 group (52.4 ± 19.4%) compared with manual (47.7 ± 25.4%, P = 0.01). When procedures under general anaesthesia (GA) and conscious sedation were analysed separately, the improvement in signal attenuation in the R60 group was only significant in the procedures under GA. Robotically assisted ablation has the capability to deliver greater bipolar voltage attenuation compared with manual ablation with appropriate selection of RF parameters. General anaesthesia confers additional benefits of catheter stability and greater signal attenuation. These findings may have a significant impact on outcomes from AF ablation procedures.

Radiometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strickland, J. I.

1985-07-02

A radiometer of the switched type has an R.F. switch connecting a detector selectively either to an antenna whose temperature (in terms of noise energy) is to be determined, or to a reference temperature, i.e. a resistive termination. The detector output is passed through an amplifier whose gain is switched between positive and negative values (for example +1 and -1) synchronously with the R.F. switch. The output of the switched gain amplifier is integrated to produce a rising voltage when the gain is positive and a falling one when it is negative. When it is positive the detector is connectedmore » to the antenna. By means of a zero crossing detector, a counter is started when this voltage crosses zero. After a fixed period, the R.F. switch and switched gain amplifier are reversed by the counter to cause the voltage to fall in accordance with the temperature of the resistive termination. The zero crossing detector and a counter measure the time interval until the voltage again crosses zero, such time interval being compared to the fixed period to provide a comparison of the unknown and reference temperatures independent of the gain of the detector, which is a valuable improvement over prior radiometers. Also, by measuring time rather than voltage, the arrangement facilitates providing a digital output more suitable for storage and transmission of the data than the analog output of prior radiometers. The instrument, which is relatively simple, rugged and compact, lends itself well to unattended use in monitoring the effect of rain storms on transmission in the 11.7 to 12.2 GHz band employed for satelite communication.« less

Constant voltage electro-slag remelting control

DOEpatents

Schlienger, M.E.

1996-10-22

A system for controlling electrode gap in an electro-slag remelt furnace has a constant regulated voltage and an electrode which is fed into the slag pool at a constant rate. The impedance of the circuit through the slag pool is directly proportional to the gap distance. Because of the constant voltage, the system current changes are inversely proportional to changes in gap. This negative feedback causes the gap to remain stable. 1 fig.

Voltage-Controlled Switching and Thermal Effects in VO2 Nano-Gap Junctions

DTIC Science & Technology

2014-06-09

Voltage-controlled switching and thermal effects in VO2 nano-gap junctions Arash Joushaghani,1 Junho Jeong,1 Suzanne Paradis,2 David Alain,2 J...2014) Voltage-controlled switching in lateral VO2 nano-gap junctions with different gap lengths and thermal properties was investigated. The effect of...indicate that the VO2 phase transition was likely initiated electroni- cally, which was sometimes followed by a secondary thermally-induced transition

A Thin Lens Model for Charged-Particle RF Accelerating Gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, Christopher K.

Presented is a thin-lens model for an RF accelerating gap that considers general axial fields without energy dependence or other a priori assumptions. Both the cosine and sine transit time factors (i.e., Fourier transforms) are required plus two additional functions; the Hilbert transforms the transit-time factors. The combination yields a complex-valued Hamiltonian rotating in the complex plane with synchronous phase. Using Hamiltonians the phase and energy gains are computed independently in the pre-gap and post-gap regions then aligned using the asymptotic values of wave number. Derivations of these results are outlined, examples are shown, and simulations with the model aremore » presented.« less

Filterless frequency 12-tupling optical millimeter-wave generation using two cascaded dual-parallel Mach-Zehnder modulators.

PubMed

Zhu, Zihang; Zhao, Shanghong; Zheng, Wanze; Wang, Wei; Lin, Baoqin

2015-11-10

A novel frequency 12-tupling optical millimeter-wave (mm-wave) generation using two cascaded dual-parallel Mach-Zehnder modulators (DP-MZMs) without an optical filter is proposed and demonstrated by computer simulation. By properly adjusting the amplitude and phase of radio frequency (RF) driving signal and the direct current (DC) bias points of two DP-MZMs, a 120 GHz mm-wave with an optical sideband suppression ratio (OSSR) of 25.1 dB and a radio frequency spurious suppression ratio (RFSSR) of 19.1 dB is shown to be generated from a 10 GHz RF driving signal, which largely reduces the response frequency of electronic devices. Furthermore, it is also proved to be valid that even if the phase difference of RF driving signals, the RF driving voltage, and the DC bias voltage deviate from the ideal values to a certain degree, the performance is still acceptable. Since no optical filter is employed to suppress the undesired optical sidebands, a high-spectral-purity mm-wave signal tunable from 48 to 216 GHz can be obtained theoretically when a RF driving signal from 4 to 18 GHz is applied to the DP-MZMs, and the system can be readily implemented in wavelength-division-multiplexing upconversion systems to provide high-quality optical local oscillator signal.

Electron current extraction from radio frequency excited micro-dielectric barrier discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon

Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10-100 {mu}m diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N{sub 2} will bemore » discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.« less

Continuously-Tunable High-Repetition Rate RF-Excited CO2 Waveguide Laser,

DTIC Science & Technology

1982-07-01

may be transformed to the appropriate level at the laser head, which elimi- nates the ueed for the very high voltage power supply . Several gas lasers...Figure 5.5 is shown a picture of the rack containing the 50 W amplifier (at the bottom) the 40 V power - supply (in the middle) and the eight final-stage...experimentally. Experimentally 40.68 MHz rf-excitation of discharges between parallel plate electrodes with up to 7-8 kW peak rf- power hus been investigated

Bridging the Gap between RF and Optical Patch Antenna Analysis via the Cavity Model.

PubMed

Unal, G S; Aksun, M I

2015-11-02

Although optical antennas with a variety of shapes and for a variety of applications have been proposed and studied, they are still in their infancy compared to their radio frequency (rf) counterparts. Optical antennas have mainly utilized the geometrical attributes of rf antennas rather than the analysis tools that have been the source of intuition for antenna engineers in rf. This study intends to narrow the gap of experience and intuition in the design of optical patch antennas by introducing an easy-to-understand and easy-to-implement analysis tool in rf, namely, the cavity model, into the optical regime. The importance of this approach is not only its simplicity in understanding and implementation but also its applicability to a broad class of patch antennas and, more importantly, its ability to provide the intuition needed to predict the outcome without going through the trial-and-error simulations with no or little intuitive guidance by the user.

Decomposed Fragment Identification in C_8F_18 RF Plasma for a-C:F Film Production

NASA Astrophysics Data System (ADS)

Sakai, Yosuke; Tazawa, Shota; Bratescu, Maria; Suda, Yoshiyuki; Sugawara, Hirotake

2004-09-01

Amorphous fluorocarbon polymer (a-C:F) film shows excellent insulation properties such as low dielectric constant (<2.5), high dielectric strength (>2 MV/cm), low surface energy, and chemical inertness. Therefore, we have studied this film for a purpose of an additional insulator to enhance the breakdown voltage in an alternative to a SF6 gas insulation system. The films are prepared using a C_8F_18 vapor RF plasma. When per-fluorocarbon, such as C_8F_18 as source gases, then the deposition rate becomes roughly two orders of magnitude higher than that obtained from conventional low molecular-weight source monomers (CF_4, C_2F_6, C_3F_6, and C_4F_8) [1]. The breakdown voltage (V_s) of N_2, Ar and He gases between the a-C:F film coated Al sphere-sphere electrodes for a gas pressure (p) times gap length (d), pd=0.1-100 Torr¥cm, was studied as well. Then, Vs between the a-C:F film coated electrodes was a several times higher than that between the Al electrodes in the present pd range[2]. In this work, the decomposed species of C_8F_18 in the plasma were identified using emission spectra from the plasma and Quadra-pole mass spectrograph, and the reason why the high deposition rate was obtained was discussed. The physical and chemical properties of a-C:F film was analyzed. [1] C.P.Lungu, et.al., Jpn. J. Appl. Phys. 38 (12B) L1544 - L1546 (1999) [2] C.Biloiu, et.al., Jpn. J. Appl. Phys. 42 (2B) L 201- L203 (2003) Work supported by Grant-in-Aid for Scientific Research (B), JSPS.

Method and device for ion mobility separations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ibrahim, Yehia M.; Garimella, Sandilya V. B.; Smith, Richard D.

2017-07-11

Methods and devices for ion separations or manipulations in gas phase are disclosed. The device includes a single non-planar surface. Arrays of electrodes are coupled to the surface. A combination of RF and DC voltages are applied to the arrays of electrodes to create confining and driving fields that move ions through the device. The DC voltages are static DC voltages or time-dependent DC potentials or waveforms.

Radio frequency-assisted fast superconducting switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, Vyacheslav; Li, Qiang

A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET maymore » be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.« less

RF power harvesting: a review on designing methodologies and applications

NASA Astrophysics Data System (ADS)

Tran, Le-Giang; Cha, Hyouk-Kyu; Park, Woo-Tae

2017-12-01

Wireless power transmission was conceptualized nearly a century ago. Certain achievements made to date have made power harvesting a reality, capable of providing alternative sources of energy. This review provides a summ ary of radio frequency (RF) power harvesting technologies in order to serve as a guide for the design of RF energy harvesting units. Since energy harvesting circuits are designed to operate with relatively small voltages and currents, they rely on state-of-the-art electrical technology for obtaining high efficiency. Thus, comprehensive analysis and discussions of various designs and their tradeoffs are included. Finally, recent applications of RF power harvesting are outlined.

Ion funnel with extended mass range and reduced conductance limit aperture

DOEpatents

Tolmachev, Aleksey V [Richland, WA; Smith, Richard D [Richland, WA

2008-04-01

An improved ion funnel design is disclosed that decreases the axial RF (parasite) fields at the ion funnel exit. This is achieved by addition of one or more compensation electrodes after the conductance limit electrode. Various RF voltage profiles may be applied to the various electrodes minimizing the parasite axial potential wells. The smallest RF aperture that serves as the conductance limiting electrode is further reduced over standard designs. Overall, the ion funnel improves transmission ranges of both low m/z and high m/z ions, reducing RF activation of ions and decreasing the gas load to subsequent differential pumping stages.

Association Between Local Bipolar Voltage and Conduction Gap Along the Left Atrial Linear Ablation Lesion in Patients With Atrial Fibrillation.

PubMed

Masuda, Masaharu; Fujita, Masashi; Iida, Osamu; Okamoto, Shin; Ishihara, Takayuki; Nanto, Kiyonori; Kanda, Takashi; Sunaga, Akihiro; Tsujimura, Takuya; Matsuda, Yasuhiro; Mano, Toshiaki

2017-08-01

A bipolar voltage reflects a thick musculature where formation of a transmural lesion may be hard to achieve. The purpose of this study was to explore the association between local bipolar voltage and conduction gap in patients with persistent atrial fibrillation (AF) who underwent atrial roof or septal linear ablation. This prospective observational study included 42 and 36 consecutive patients with persistent AF who underwent roof or septal linear ablations, respectively. After pulmonary vein isolation, left atrial linear ablations were performed, and conduction gap sites were identified and ablated after first-touch radiofrequency application. Conduction gap(s) after the first-touch roof and septal linear ablation were observed in 13 (32%) and 19 patients (53%), respectively. Roof and septal area voltages were higher in patients with conduction gap(s) than in those without (roof, 1.23 ± 0.77 vs 0.73 ± 0.42 mV, p = 0.010; septal, 0.96 ± 0.43 vs 0.54 ± 0.18 mV, p = 0.001). Trisected regional analyses revealed that the voltage was higher at the region with a conduction gap than at the region without. Complete conduction block across the roof and septal lines was not achieved in 3 (7%) and 6 patients (17%), respectively. Patients in whom a linear conduction block could not be achieved demonstrated higher ablation area voltage than those with a successful conduction block (roof, 1.91 ± 0.74 vs 0.81 ± 0.51 mV, p = 0.001; septal, 1.15 ± 0.56 vs 0.69 ± 0.31 mV, p = 0.006). In conclusion, a high regional bipolar voltage predicts failure to achieve conduction block after left atrial roof or septal linear ablation. In addition, the conduction gap was located at the preserved voltage area. Copyright © 2017 Elsevier Inc. All rights reserved.

Ferroelectric Emission Cathodes for Low-Power Electric Propulsion

NASA Technical Reports Server (NTRS)

Kovaleski, Scott D.; Burke, Tom (Technical Monitor)

2002-01-01

Low- or no-flow electron emitters are required for low-power electric thrusters, spacecraft plasma contactors, and electrodynamic tether systems to reduce or eliminate the need for propellant/expellant. Expellant-less neutralizers can improve the viability of very low-power colloid thrusters, field emission electric propulsion devices, ion engines, Hall thrusters, and gridded vacuum arc thrusters. The NASA Glenn Research Center (GRC) is evaluating ferroelectric emission (FEE) cathodes as zero expellant flow rate cathode sources for the applications listed above. At GRC, low voltage (100s to approx. 1500 V) operation of FEE cathodes is examined. Initial experiments, with unipolar, bipolar, and RF burst applied voltage, have produced current pulses 250 to 1000 ns in duration with peak currents of up to 2 A at voltages at or below 1500 V. In particular, FEE cathodes driven by RF burst voltages from 1400 to 2000 V peak to peak, at burst frequencies from 70 to 400 kHz, emitted average current densities from 0.1 to 0.7 A/sq cm. Pulse repeatability as a function of input voltage has been initially established. Reliable emission has been achieved in air background at pressures as high as 10(exp -6) Torr.

Method and apparatus for directing ions and other charged particles generated at near atmospheric pressures into a region under vacuum

DOEpatents

Smith, Richard D.; Shaffer, Scott A.

2000-01-01

A method and apparatus for focusing dispersed charged particles. More specifically, a series of elements within a region maintained at a pressure between 10.sup.-1 millibar and 1 bar, each having successively larger apertures forming an ion funnel, wherein RF voltages are applied to the elements so that the RF voltage on any element has phase, amplitude and frequency necessary to define a confinement zone for charged particles of appropriate charge and mass in the interior of the ion funnel, wherein the confinement zone has an acceptance region and an emmitance region and where the acceptance region area is larger than the emmitance region area.

Avionics electromagnetic interference immunity and environment

NASA Technical Reports Server (NTRS)

Clarke, C. A.

1986-01-01

Aircraft electromagnetic spectrum and radio frequency (RF) field strengths are charted, profiling the higher levels of electromagnetic voltages encountered by the commercial aircraft wiring. Selected military, urban, and rural electromagnetic field levels are plotted and provide a comparison of radiation amplitudes. Low frequency magnetic fields and electric fields from 400 H(Z) power systems are charted versus frequency and wire separation to indicate induced voltages on adjacent or neighboring circuits. Induced EMI levels and attenuation characteristics of electric, magnetic, RF fields, and transients are plotted and graphed for common types of wire circuits. The significance of wire circuit returns and shielding is emphasized to highlight the techniques that help block the paths of electromagnetic interference and maintain avionic interface signal quality.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, Klaus J.

1993-01-01

Thin homoepitaxial films of gallium phosphide (GaP) were grown by remote plasma enhanced chemical vapor deposition utilizing in situ generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (rf) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate, however, the saturation of the growth rate at even higher rf power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Remote plasma enhanced chemical vapor deposition of GaP with in situ generation of phosphine precursors

NASA Technical Reports Server (NTRS)

Choi, S. W.; Lucovsky, G.; Bachmann, K. J.

1992-01-01

Thin homoepitaxial films of gallium phosphide (GaP) have been grown by remote plasma enhanced chemical vapor deposition utilizing in situ-generated phosphine precursors. The GaP forming reaction is kinetically controlled with an activation energy of 0.65 eV. The increase of the growth rate with increasing radio frequency (RF) power between 20 and 100 W is due to the combined effects of increasingly complete excitation and the spatial extension of the glow discharge toward the substrate; however, the saturation of the growth rate at even higher RF power indicates the saturation of the generation rate of phosphine precursors at this condition. Slight interdiffusion of P into Si and Si into GaP is indicated from GaP/Si heterostructures grown under similar conditions as the GaP homojunctions.

Characterization and reliability of aluminum gallium nitride/gallium nitride high electron mobility transistors

NASA Astrophysics Data System (ADS)

Douglas, Erica Ann

Compound semiconductor devices, particularly those based on GaN, have found significant use in military and civilian systems for both microwave and optoelectronic applications. Future uses in ultra-high power radar systems will require the use of GaN transistors operated at very high voltages, currents and temperatures. GaN-based high electron mobility transistors (HEMTs) have proven power handling capability that overshadows all other wide band gap semiconductor devices for high frequency and high-power applications. Little conclusive research has been reported in order to determine the dominating degradation mechanisms of the devices that result in failure under standard operating conditions in the field. Therefore, it is imperative that further reliability testing be carried out to determine the failure mechanisms present in GaN HEMTs in order to improve device performance, and thus further the ability for future technologies to be developed. In order to obtain a better understanding of the true reliability of AlGaN/GaN HEMTs and determine the MTTF under standard operating conditions, it is crucial to investigate the interaction effects between thermal and electrical degradation. This research spans device characterization, device reliability, and device simulation in order to obtain an all-encompassing picture of the device physics. Initially, finite element thermal simulations were performed to investigate the effect of device design on self-heating under high power operation. This was then followed by a study of reliability of HEMTs and other tests structures during high power dc operation. Test structures without Schottky contacts showed high stability as compared to HEMTs, indicating that degradation of the gate is the reason for permanent device degradation. High reverse bias of the gate has been shown to induce the inverse piezoelectric effect, resulting in a sharp increase in gate leakage current due to crack formation. The introduction of elevated temperatures during high reverse gate bias indicated that device failure is due to the breakdown of an unintentional gate oxide. RF stress of AlGaN/GaN HEMTs showed comparable critical voltage breakdown regime as that of similar devices stressed under dc conditions. Though RF device characteristics showed stability up to a drain bias of 20 V, Schottky diode characteristics degraded substantially at all voltages investigated. Results from both dc and RF stress conditions, under several bias regimes, confirm that the primary root for stress induced degradation was due to the Schottky contact. (Full text of this dissertation may be available via the University of Florida Libraries web site. Please check http://www.uflib.ufl.edu/etd.html)

ACCELERATORS: RF system design and measurement of HIRF-CSRe

NASA Astrophysics Data System (ADS)

Xu, Zhe; Zhao, Hong-Wei; Wang, Chun-Xiao; Xia, Jia-Wen; Zhan, Wen-Long; Bian, Zhi-Bin

2009-05-01

An RF system for the CSRe (cooling storage experimental ring) is designed and manufactured domestically. The present paper mainly describes the RF system design in five main sections: ferrite ring, RF cavity, RF generator, low level system and cavity cooling. The cavity is based on a type of coaxial resonator which is shorted at the end with one gap and loaded with domestic ferrite rings. The RF generator is designed in the push-pull mode and the low level control system is based on a DSP+FGPA+DDS+USB interface and has three feedback loops. Finally we give the results of the measurement on our system.

Roll type conducting polymer legs for rigid-flexible thermoelectric generator

NASA Astrophysics Data System (ADS)

Park, Teahoon; Lim, Hanwhuy; Hwang, Jong Un; Na, Jongbeom; Lee, Hyunki; Kim, Eunkyoung

2017-07-01

A roll-type conducting polymer film was explored as a flexible organic p-type thermoelectric leg using poly(3,4-ethylenedioxythiophene) (PEDOT) doped with tosylate. The PEDOT films were prepared through solution casting polymerization and rolled up for a roll-type leg. Due to the high flexibility, the roll-type PEDOT leg enabled easy contact to both top and bottom electrodes. Simulation on the dynamic heat transfer and convective cooling for a vertically roosted rod- and roll-type PEDOT leg showed that the temperature difference (ΔT) between the hot and cold sides of the leg was much higher in the roll than that of the rod. The PEDOT legs were integrated with n-type Bi2Te3 blocks, to give a 36-couple rigid-flexible thermoelectric generator (RF-TEG). The maximum output voltage from the 36-couple RF-TEG under a ΔT of 7.9 K was determined as 36.7 mV along with a high output power of 115 nW. A wearable RF-TEG was prepared upon the combination of the 36-couple RF-TEG with an arm warmer, to afford an output voltage of 10.6 mV, which was generated constantly and steadily from human wrist heat.

Transformation of Rhodococcus fascians by High-Voltage Electroporation and Development of R. fascians Cloning Vectors

PubMed Central

Desomer, Jan; Dhaese, Patrick; Montagu, Marc Van

1990-01-01

The analysis of the virulence determinants of phytopathogenic Rhodococcus fascians has been hampered by the lack of a system for introducing exogenous DNA. We investigated the possibility of genetic transformation of R. fascians by high-voltage electroporation of intact bacterial cells in the presence of plasmid DNA. Electrotransformation in R. fascians D188 resulted in transformation frequencies ranging from 105/μg of DNA to 107/μg of DNA, depending on the DNA concentration. The effects of different electrical parameters and composition of electroporation medium on transformation efficiency are presented. By this transformation method, a cloning vector (pRF28) for R. fascians based on an indigenous 160-kilobase (chloramphenicol and cadmium resistance-encoding) plasmid pRF2 from strain NCPPB 1675 was developed. The origin of replication and the chloramphenicol resistance gene on pRF28 were used to construct cloning vectors that are capable of replication in R. fascians and Escherichia coli. The electroporation method presented was efficient enough to allow detection of the rare integration of replication-deficient pRF28 derivatives in the R. fascians D188 genome via either homologous or illegitimate recombination. Images PMID:16348290

Enhancement of the performance of GaN IMPATT diodes by negative differential mobility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Yang; Yang, Lin’an, E-mail: layang@xidian.edu.cn; Chen, Qing

2016-05-15

A theoretical analysis of high-efficiency punch-through operation GaN-based terahertz IMPATT diodes has been carried out in this paper. It is shown that the negative differential mobility (NDM) characteristics of GaN coupled with the space charge effect acting as a self-feedback system can markedly increase the drift velocity of injection carriers, and thereby enhance diode performance under appropriate external RF voltage. The behavior of traveling electrons in the transit zone is investigated in detail. It is found that the IMPATT diode with a punch-through structure operating in the NDM mode exhibits superior characteristics compared with the equivalent diode operating in themore » Si-like constant mobility mode. In particular, the NDM-mode diode can tolerate a larger RF voltage swing than that operating in constant mobility mode. Numerical simulation results reveal that the highest efficiency of 26.6% and maximum RF power of 2.29 W can be achieved for the NDM-mode diode at a frequency of 225 GHz. A highest efficiency of 19.0% and maximum RF power of 1.58 W are obtained for the diode with constant mobility.« less

Improvement of both bandwidth and driving voltage of polymer phase modulators using buried in-plane coupled micro-strip driving electrodes

NASA Astrophysics Data System (ADS)

Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.

2017-06-01

A large performance improvement of polymer phase modulators is reported by using buried in-plane coupled microstrip (CMS) driving electrodes, instead of standard vertical Micro-Strip electrodes. The in-plane CMS driving electrodes have both low radio frequency (RF) losses and high overlap integral between optical and RF waves compared to the vertical designs. Since the optical waveguide and CMS electrodes are located in the same plane, optical injection and microwave driving access cannot be separated perpendicularly without intersection between them. A via-less transition between grounded coplanar waveguide access and CMS driving electrodes is introduced in order to provide broadband excitation of optical phase modulators and avoid the intersection of the optical core and the electrical probe. Simulation and measurement results of the benzocyclobutene polymer as a cladding material and the PMMI-CPO1 polymer as an optical core with an electro-optic coefficient of 70 pm/V demonstrate a broadband operation of 67 GHz using travelling-wave driving electrodes with a half-wave voltage of 4.5 V, while satisfying its low RF losses and high overlap integral between optical and RF waves of in-plane CMS electrodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Ashutosh, E-mail: asingh.rs.ece@iitbhu.ac.in; Center of Research in Microwave Tubes, Department of Electronics Engineering, Indian Institute of Technology; Jain, P. K.

In this paper, the effects of electron beam parameters and velocity spread on the RF behavior of a metallic photonic band gap (PBG) cavity gyrotron operating at 35 GHz with TE{sub 041}–like mode have been theoretically demonstrated. PBG cavity is used here to achieve a single mode operation of the overmoded cavity. The nonlinear time-dependent multimode analysis has been used to observe the beam-wave interaction behavior of the PBG cavity gyrotron, and a commercially available PIC code “CST Particle Studio” has been reconfigured to obtain 3D simulation results in order to validate the analytical values. The output power for this typicalmore » PBG gyrotron has been obtained ∼108 kW with ∼15.5% efficiency in a well confined TE{sub 041}–like mode, while all other competing modes have significantly low values of power output. The output power and efficiency of a gyrotron depend highly on the electron beam parameters and velocity spread. The influence of several electron beam parameters, e.g., beam voltage, beam current, beam velocity pitch factor, and DC magnetic field, on the PBG gyrotron operations has been investigated. This study would be helpful in optimising the electron beam parameters and estimating accurate RF output power of the high frequency PBG cavity based gyrotron oscillators.« less

Corona-glow transition in the atmospheric pressure RF-excited plasma needle

NASA Astrophysics Data System (ADS)

Sakiyama, Y.; Graves, D. B.

2006-08-01

We present clear evidence of two different discharge modes of the atmospheric pressure RF-excited plasma needle and the transition mechanism by the finite element method. The gas used is helium with 0.1% nitrogen addition. The needle has a point-to-plane geometry with a radius of 30 µm at the tip, 150 µm at the base and an inter-electrode gap of 1 mm. We employ the one-moment fluid model with the local field approximation. Our simulation results indicate that the plasma needle operates as a corona discharge at low power and that the discharge mode transitions to a glow discharge at a critical power. The discharge power increases but the discharge voltage drops abruptly by a factor of about 2 in the corona-glow transition. The plasma density and ionization is confined near the needle tip in corona-mode while it spreads back along the needle surface in glow-mode. The corona-glow transition is also characterized by a dramatic decrease in sheath thickness and an order of magnitude increase in plasma density and volume-averaged ionization. The transition is observed whether or not secondary electron emission is included in the model, and therefore we suggest that this is not an α -γ transition.

Active stabilization of ion trap radiofrequency potentials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.

2016-05-15

We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

DTIC Science & Technology

1981-07-01

and Berglund (13,5). Pulsed electron flow is induced through the SiO 2 film by rf avalanche in the p-silicon surface depletion layer, and the rf voltage...were then evaporated through a shadow mask from an rf heated crucible in a vacuum chamber under 10 - 6 Torr pressure. Finally, a post-metallization...12.) P. Williams and J.E. Baker, Appl. Phys. Lett. 36, 842 (1980). 13.) H.H. Anderson, Appl. Phys. 18, 131 (1979). 14.) D.R. Young, D.J. DiMaria, W.R

MEMS Gate Structures for Electric Propulsion Applications

DTIC Science & Technology

2006-07-12

distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es...minutes. A hot pressed boron nitride target (4N) in the hexagonal phase (h- BN) was sputtered in a RF magnetron sputtering gun. To promote the nucleation...and nanoFETs. This paper concludes with a discussion on using MEMS gates for dual -grid electron field emission applications. II. Gate Design I I

Effect of frequency on the uniformity of symmetrical RF CCP discharges

NASA Astrophysics Data System (ADS)

Liu, Yue; Booth, Jean-Paul; Chabert, Pascal

2018-05-01

A 2D Cartesian electrostatic particle-in-cell/Monte Carlo collision (PIC/MCC) model presented previously (Liu et al 2018 Plasma Sources Sci. Technol. 27 025006) is used to investigate the effect of the driving frequency (over the range of 15–45 MHz) on the plasma uniformity in radio frequency (RF) capacitively coupled plasma (CCP) discharges in a geometrically symmetric reactor with a dielectric side wall in argon gas. The reactor size (12 cm electrode length, 2.5 cm gap) and driving frequency are sufficiently small that electromagnetic effects can be ignored. Previously, we showed (Liu et al 2018 Plasma Sources Sci. Technol. 27 025006) that for 15 MHz excitation, Ohmic heating of electrons by the electric field perpendicular to the electrodes is enhanced in a region in front of the dielectric side wall, leading to a maximum in electron density there. In this work we show that increasing the excitation frequency (at constant applied voltage amplitude) not only increases the overall electron heating and density but also causes a stronger, narrower peak in electron heating closer to the dielectric wall, improving the plasma uniformity along the electrodes. This heating peak comes both from enhanced perpendicular electron heating and from the appearance at high frequency of significant parallel heating. The latter is caused by the presence of a significant parallel-direction RF oscillating electric field in the corners. Whereas at the reactor center the sheaths oscillate perpendicularly to the electrodes, near the dielectric edge they move in and out of the corners and must be treated in two dimensions.

Automatic control of finite element models for temperature-controlled radiofrequency ablation.

PubMed

Haemmerich, Dieter; Webster, John G

2005-07-14

The finite element method (FEM) has been used to simulate cardiac and hepatic radiofrequency (RF) ablation. The FEM allows modeling of complex geometries that cannot be solved by analytical methods or finite difference models. In both hepatic and cardiac RF ablation a common control mode is temperature-controlled mode. Commercial FEM packages don't support automating temperature control. Most researchers manually control the applied power by trial and error to keep the tip temperature of the electrodes constant. We implemented a PI controller in a control program written in C++. The program checks the tip temperature after each step and controls the applied voltage to keep temperature constant. We created a closed loop system consisting of a FEM model and the software controlling the applied voltage. The control parameters for the controller were optimized using a closed loop system simulation. We present results of a temperature controlled 3-D FEM model of a RITA model 30 electrode. The control software effectively controlled applied voltage in the FEM model to obtain, and keep electrodes at target temperature of 100 degrees C. The closed loop system simulation output closely correlated with the FEM model, and allowed us to optimize control parameters. The closed loop control of the FEM model allowed us to implement temperature controlled RF ablation with minimal user input.

Rise time analysis of pulsed klystron-modulator for efficiency improvement of linear colliders

NASA Astrophysics Data System (ADS)

Oh, J. S.; Cho, M. H.; Namkung, W.; Chung, K. H.; Shintake, T.; Matsumoto, H.

2000-04-01

In linear accelerators, the periods during the rise and fall of a klystron-modulator pulse cannot be used to generate RF power. Thus, these periods need to be minimized to get high efficiency, especially in large-scale machines. In this paper, we present a simplified and generalized voltage rise time function of a pulsed modulator with a high-power klystron load using the equivalent circuit analysis method. The optimum pulse waveform is generated when this pulsed power system is tuned with a damping factor of ˜0.85. The normalized rise time chart presented in this paper allows one to predict the rise time and pulse shape of the pulsed power system in general. The results can be summarized as follows: The large distributed capacitance in the pulse tank and operating parameters, Vs× Tp , where Vs is load voltage and Tp is the pulse width, are the main factors determining the pulse rise time in the high-power RF system. With an RF pulse compression scheme, up to ±3% ripple of the modulator voltage is allowed without serious loss of compressor efficiency, which allows the modulator efficiency to be improved as well. The wiring inductance should be minimized to get the fastest rise time.

RF-assisted current startup in FED

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S. K.; Peng, Yueng Kay Martin; Kammash, T.

1981-01-01

Auxiliary rf heating of electrons before and during the current rise phase in FED is examined as a means of reducing both the initiation loop voltage and resistive flux expendicture during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at {approx} 90 GHz is used to create a small volume of high conductivity plasma (T{sub e} {approx_equal} 100-200 eV, n{sub e} {approx_equal} 10{sup 13} cm{sup -3}) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a{sub o} {approx_equal} 0.2-0.4 m) current channel to be established with amore » relatively low initial loop voltage (<25 V). During the subsequent plasma expansion and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. The physics models used for analyzing the UHR heating and current rise phases are also discussed.« less

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

PubMed Central

Shokrani, Mohammad Reza; Hamidon, Mohd Nizar B.; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology. PMID:24782680

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

PubMed

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

First experiments with the negative ion source NIO1.

PubMed

Cavenago, M; Serianni, G; De Muri, M; Agostinetti, P; Antoni, V; Baltador, C; Barbisan, M; Baseggio, L; Bigi, M; Cervaro, V; Degli Agostini, F; Fagotti, E; Kulevoy, T; Ippolito, N; Laterza, B; Minarello, A; Maniero, M; Pasqualotto, R; Petrenko, S; Poggi, M; Ravarotto, D; Recchia, M; Sartori, E; Sattin, M; Sonato, P; Taccogna, F; Variale, V; Veltri, P; Zaniol, B; Zanotto, L; Zucchetti, S

2016-02-01

Neutral Beam Injectors (NBIs), which need to be strongly optimized in the perspective of DEMO reactor, request a thorough understanding of the negative ion source used and of the multi-beamlet optics. A relatively compact radio frequency (rf) ion source, named NIO1 (Negative Ion Optimization 1), with 9 beam apertures for a total H(-) current of 130 mA, 60 kV acceleration voltage, was installed at Consorzio RFX, including a high voltage deck and an X-ray shield, to provide a test bench for source optimizations for activities in support to the ITER NBI test facility. NIO1 status and plasma experiments both with air and with hydrogen as filling gas are described. Transition from a weak plasma to an inductively coupled plasma is clearly evident for the former gas and may be triggered by rising the rf power (over 0.5 kW) at low pressure (equal or below 2 Pa). Transition in hydrogen plasma requires more rf power (over 1.5 kW).

Multiharmonic rf feedforward system for compensation of beam loading and periodic transient effects in magnetic-alloy cavities of a proton synchrotron

NASA Astrophysics Data System (ADS)

Tamura, Fumihiko; Ohmori, Chihiro; Yamamoto, Masanobu; Yoshii, Masahito; Schnase, Alexander; Nomura, Masahiro; Toda, Makoto; Shimada, Taihei; Hasegawa, Katsushi; Hara, Keigo

2013-05-01

Beam loading compensation is a key for acceleration of a high intensity proton beam in the main ring (MR) of the Japan Proton Accelerator Research Complex (J-PARC). Magnetic alloy loaded rf cavities with a Q value of 22 are used to achieve high accelerating voltages without a tuning bias loop. The cavity is driven by a single harmonic (h=9) rf signal while the cavity frequency response also covers the neighbor harmonics (h=8,10). Therefore the wake voltage induced by the high intensity beam consists of the three harmonics, h=8,9,10. The beam loading of neighbor harmonics is the source of periodic transient effects and a possible source of coupled bunch instabilities. In the article, we analyze the wake voltage induced by the high intensity beam. We employ the rf feedforward method to compensate the beam loading of these three harmonics (h=8,9,10). The full-digital multiharmonic feedforward system was developed for the MR. We describe the system architecture and the commissioning methodology of the feedforward patterns. The commissioning of the feedforward system has been performed by using high intensity beams with 1.0×1014 proteins per pulse. The impedance seen by the beam is successfully reduced and the longitudinal oscillations due to the beam loading are reduced. By the beam loading compensation, stable high power beam operation is achieved. We also report the reduction of the momentum loss during the debunching process for the slow extraction by the feedforward.

Operational Parameters, Considerations, and Design Decisions for Resource-Constrained Ion Trap Mass Spectrometers

NASA Technical Reports Server (NTRS)

Danell, Ryan M.; VanAmerom, Friso H. W.; Pinnick, Veronica; Cotter, Robert J.; Brickerhoff, William; Mahaffy, Paul

2011-01-01

Mass spectrometers are increasingly finding applications in new and unique areas, often in situations where key operational resources (i.e. power, weight and size) are limited. One such example is the Mars Organic Molecule Analyzer (MOMA). This instrument is a joint venture between NASA and the European Space Agency (ESA) to develop an ion trap mass spectrometer for chemical analysis on Mars. The constraints on such an instrument are significant as are the performance requirements. While the ideal operating parameters for an ion trap are generally well characterized, methods to maintain analytical performance with limited power and system weight need to be investigated and tested. Methods Experiments have been performed on two custom ion trap mass spectrometers developed as prototypes for the MOMA instrument. This hardware consists of quadrupole ion trap electrodes that are 70% the size of common commercial instrumentation. The trapping RF voltage is created with a custom tank circuit that can be tuned over a range of RF frequencies and is driven using laboratory supplies and amplifiers. The entire instrument is controlled with custom Lab VIEW software that allows a high degree of flexibility in the definition of the scan function defining the ion trap experiment. Ions are typically generated via an internal electron ionization source, however, a laser desorption source is also in development for analysis of larger intact molecules. Preliminary Data The main goals in this work have been to reduce the power required to generate the radio frequency trapping field used in an ion trap mass spectrometer. Generally minimizing the power will also reduce the volume and mass of the electronics to support the instrument. In order to achieve optimum performance, commercial instruments typically utilize RF frequencies in the 1 MHz range. Without much concern for power usage, they simply generate the voltage required to access the mass range of interest. In order to reduce the required RF voltage (and power), operation of the ion trap at lower RF frequencies has been investigated. Surprisingly, the performance of the instrument has only been slightly degraded at RF frequencies all the way down to 500 kHz. Mass resolution is relatively stable to this point and depending on the resonant ejection point used, the peak intensity is also quite stable. To date only masses up to m/z 200 have been fully investigated, however, additional studies are planned to verify the performance with higher mass ions. The lower frequency and voltage should reduce the pseudo potential well depth, eventually affecting the trapping efficiency of the instrument -- effect that could manifest itself in significantly limiting the mass range of trapped ions. Other methods to reduce the RF power while maintaining analytical performance are also under investigation. This includes ion ejection at lower q(sub z) values to access a given mass with a lower RF voltage. The loss of mass resolution at lower q(sub eject) points has been measured and current work is underway to leverage scan speed and the use of non-linear resonances in order to counter this trend. The overall trap performance under this range of operating conditions will be presented with a goal of identifying what trade-offs are acceptable.

Rf system for the NSLS coherent infrared radiation source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Broome, W.; Biscardi, R.; Keane, J.

1995-05-01

The existing NSLS X-ray Lithography Source (XLS Phase I) is being considered for a coherent synchrotron radiation source. The existing 211 MHz warm cavity will be replaced with a 5-cell 2856 MHz superconducting RF cavity, driven by a series of 2 kW klystrons. The RF system will provide a total V{sub RF} of 1.5 MV to produce {sigma}{sub L} = 0.3 mm electron bunches at an energy of 150 MeV. Superconducting technology significantly reduces the required space and power needed to achieve the higher voltage. It is the purpose of this paper to describe the superconducting RF system and cavity,more » power requirements, and cavity design parameters such as input coupling, Quality Factor, and Higher Order Modes.« less

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

NASA Technical Reports Server (NTRS)

Kooi, J. W.; Stern, J. A.; Chattopadhyay, G.; LeDuc, H. G.; Bumble, B.; Zmuidzinas, J.

1998-01-01

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15 K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Absolute Spatially- and Temporally-Resolved Optical Emission Measurements of rf Glow Discharges in Argon

PubMed Central

Djurović, S.; Roberts, J. R.; Sobolewski, M. A.; Olthoff, J. K.

1993-01-01

Spatially- and temporally-resolved measurements of optical emission intensities are presented from rf discharges in argon over a wide range of pressures (6.7 to 133 Pa) and applied rf voltages (75 to 200 V). Results of measurements of emission intensities are presented for both an atomic transition (Ar I, 750.4 nm) and an ionic transition (Ar II, 434.8 nm). The absolute scale of these optical emissions has been determined by comparison with the optical emission from a calibrated standard lamp. All measurements were made in a well-defined rf reactor. They provide detailed characterization of local time-resolved plasma conditions suitable for the comparison with results from other experiments and theoretical models. These measurements represent a new level of detail in diagnostic measurements of rf plasmas, and provide insight into the electron transport properties of rf discharges. PMID:28053464

Emission characteristics of 6.78-MHz radio-frequency glow discharge plasma in a pulsed mode

NASA Astrophysics Data System (ADS)

Zhang, Xinyue; Wagatsuma, Kazuaki

2017-07-01

This paper investigated Boltzmann plots for both atomic and ionic emission lines of iron in an argon glow discharge plasma driven by 6.78-MHz radio-frequency (RF) voltage in a pulsed operation, in order to discuss how the excitation/ionization process was affected by the pulsation. For this purpose, a pulse frequency as well as a duty ratio of the pulsed RF voltage was selected as the experimenter parameters. A Grimm-style radiation source was employed at a forward RF power of 70 W and at an argon pressures of 670 Pa. The Boltzmann plot for low-lying excited levels of iron atom was on a linear relationship, which was probably attributed to thermal collisions with ultimate electrons in the negative glow region; in this case, the excitation temperature was obtained in a narrow range of 3300-3400 K, which was hardly affected by the duty ratio as well as the pulse frequency of the pulsed RF glow discharge plasma. This observation suggested that the RF plasma could be supported by a self-stabilized negative glow region, where the kinetic energy distribution of the electrons would be changed to a lesser extent. Additional non-thermal excitation processes, such as a Penning-type collision and a charge-transfer collision, led to deviations (overpopulation) of particular energy levels of iron atom or iron ion from the normal Boltzmann distribution. However, their contributions to the overall excitation/ionization were not altered so greatly, when the pulse frequency or the duty ratio was varied in the pulsed RF glow discharge plasma.

Influence of Gap Distance on Vacuum Arc Characteristics of Cup Type AMF Electrode in Vacuum Interrupters

NASA Astrophysics Data System (ADS)

Cheng, Shaoyong; Xiu, Shixin; Wang, Jimei; Shen, Zhengchao

2006-11-01

The greenhouse effect of SF6 is a great concern today. The development of high voltage vacuum circuit breakers becomes more important. The vacuum circuit breaker has minimum pollution to the environment. The vacuum interrupter is the key part of a vacuum circuit breaker. The interrupting characteristics in vacuum and arc-controlling technique are the main problems to be solved for a longer gap distance in developing high voltage vacuum interrupters. To understand the vacuum arc characteristics and provide effective technique to control vacuum arc in a long gap distance, the arc mode transition of a cup-type axial magnetic field electrode is observed by a high-speed charge coupled device (CCD) video camera under different gap distances while the arc voltage and arc current are recorded. The controlling ability of the axial magnetic field on vacuum arc obviously decreases when the gap distance is longer than 40 mm. The noise components and mean value of the arc voltage significantly increase. The effective method for controlling the vacuum arc characteristics is provided by long gap distances based on the test results. The test results can be used as a reference to develop high voltage and large capacity vacuum interrupters.

Switch device having a non-linear transmission line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.

Switching devices are provided. The switching devices include an input electrode, having a main electrode and a trigger electrode, and an output electrode. The main electrode and the trigger electrode are separated from the output electrode by a main gap and a trigger gap, respectively. During operation, the trigger electrode compresses and amplifies a trigger voltage signal causing the trigger electrode to emit a pulse of energy. This pulse of energy form plasma near the trigger electrode, either by arcing across the trigger gap, or by arcing from the trigger electrode to the main electrode. This plasma decreases the breakdownmore » voltage of the main gap. Simultaneously, or near simultaneously, a main voltage signal propagates through the main electrode. The main voltage signal emits a main pulse of energy that arcs across the main gap while the plasma formed by the trigger pulse is still present.« less

An adaptable multiple power source for mass spectrometry and other scientific instruments.

PubMed

Lin, T-Y; Anderson, G A; Norheim, R V; Prost, S A; LaMarche, B L; Leach, F E; Auberry, K J; Smith, R D; Koppenaal, D W; Robinson, E W; Paša-Tolić, L

2015-09-01

An Adaptable Multiple Power Source (AMPS) system has been designed and constructed. The AMPS system can provide up to 16 direct current (DC) (±400 V; 5 mA), 4 radio frequency (RF) (two 500 VPP sinusoidal signals each, 0.5-5 MHz) channels, 2 high voltage sources (±6 kV), and one ∼40 W, 250 °C temperature-regulated heater. The system is controlled by a microcontroller, capable of communicating with its front panel or a computer. It can assign not only pre-saved fixed DC and RF signals but also profiled DC voltages. The AMPS system is capable of driving many mass spectrometry components and ancillary devices and can be adapted to other instrumentation/engineering projects.

Low temperature RF plasma nitriding of self-organized TiO2 nanotubes for effective bandgap reduction

NASA Astrophysics Data System (ADS)

Bonelli, Thiago Scremin; Pereyra, Inés

2018-06-01

Titanium dioxide is a widely studied semiconductor material found in many nanostructured forms, presenting very interesting properties for several applications, particularly photocatalysis. TiO2 nanotubes have a high surface-to-volume ratio and functional electronic properties for light harvesting. Despite these manifold advantages, TiO2 photocatalytic activity is limited to UV radiation due to its large band gap. In this work, TiO2 nanotubes produced by electrochemical anodization were submitted to plasma nitriding processes in a PECVD reactor. The plasma parameters were evaluated to find the best conditions for gap reduction, in order to increase their photocatalytic activity. The pressure and RF power density were varied from 0.66 to 2.66 mbar and 0.22 to 3.51 W/cm2 respectively. The best gap reduction, to 2.80 eV, was achieved using a pressure of 1.33 mbar and 1.75 W/cm2 RF power at 320 °C, during a 2-h process. This leads to a 14% reduction in the band gap value and an increase of 25.3% in methylene blue reduction, doubling the range of solar photons absorption from 5 to 10% of the solar spectrum.

Preparation, Properties, and Structure of Hydrogenated Amorphous Carbon Films.

NASA Astrophysics Data System (ADS)

Chen, Hsiung

1990-01-01

Hydrogenated amorphous carbon films (a-C:H) have been deposited on glass, fused silica, Si, Mo, Al, and 304 stainless steel at room temperature by plasma enhanced chemical vapor deposition (PECVD). The rf glow discharge and plasma kinetics of the deposition process were investigated. Negative self-bias voltage V_{rm b} and gas pressure P were used as two major deposition parameters. The hydrogen concentration, internal stress, mass density, hardness, and thickness of the deposited films were measured. In the low energy deposition region, 0 > V_{rm b} > -100 V, soft polymerlike films with high hydrogen concentration and low density were found. Hard diamondlike films with high stress were deposited in the bias voltage range, -100 V > V _{rm b} > -1000 V. Dark graphitic films with low hydrogen concentration were grown at V_ {rm b} < -1000 V. The optical absorption of a series of a-C:H films have been measured. Optical energy gaps deduced from optical absorption data using the Tauc relation lie between 0.8 eV and 1.4 eV. Doping of a-C:H films by boron and sulfur is accompanied by an increasing number of gap states, i.e., the absorption coefficient is increased and the optical gap is reduced. The thermal stability was studied by thermal desorption spectroscopy and heat treatment at atmospheric pressure. A structural study of a-C:H films was performed using data taken on our films and from literature sources. The relation between cluster size and the intensity ratio of Raman peaks was studied. A comparison of the films as described by the graphitic cluster two-phase (GCT) model, the random covalent network (RCN) model and the all-sp ^2 defect graphite (DG) model was made. The properties and structure of a-C:H films are sensitively dependent on the preparation conditions. Correlations between the deposition conditions, structure, and properties are determined.

Experimental investigations of argon spark gap recovery times by developing a high voltage double pulse generator.

PubMed

Reddy, C S; Patel, A S; Naresh, P; Sharma, Archana; Mittal, K C

2014-06-01

The voltage recovery in a spark gap for repetitive switching has been a long research interest. A two-pulse technique is used to determine the voltage recovery times of gas spark gap switch with argon gas. First pulse is applied to the spark gap to over-volt the gap and initiate the breakdown and second pulse is used to determine the recovery voltage of the gap. A pulse transformer based double pulse generator capable of generating 40 kV peak pulses with rise time of 300 ns and 1.5 μs FWHM and with a delay of 10 μs-1 s was developed. A matrix transformer topology is used to get fast rise times by reducing L(l)C(d) product in the circuit. Recovery Experiments have been conducted for 2 mm, 3 mm, and 4 mm gap length with 0-2 bars pressure for argon gas. Electrodes of a sparkgap chamber are of rogowsky profile type, made up of stainless steel material, and thickness of 15 mm are used in the recovery study. The variation in the distance and pressure effects the recovery rate of the spark gap. An intermediate plateu is observed in the spark gap recovery curves. Recovery time decreases with increase in pressure and shorter gaps in length are recovering faster than longer gaps.

Imaging of the native inversion layer in Silicon-On-Insulator wafers via Scanning Surface Photovoltage: Implications for RF device performance

NASA Astrophysics Data System (ADS)

Dahanayaka, Daminda; Wong, Andrew; Kaszuba, Philip; Moszkowicz, Leon; Slinkman, James; IBM SPV Lab Team

2014-03-01

Silicon-On-Insulator (SOI) technology has proved beneficial for RF cell phone technologies, which have equivalent performance to GaAs technologies. However, there is evident parasitic inversion layer under the Buried Oxide (BOX) at the interface with the high resistivity Si substrate. The latter is inferred from capacitance-voltage measurements on MOSCAPs. The inversion layer has adverse effects on RF device performance. We present data which, for the first time, show the extent of the inversion layer in the underlying substrate. This knowledge has driven processing techniques to suppress the inversion.

Profile Control by Biased Electrodes in Large Diameter RF Produced Pl asma

NASA Astrophysics Data System (ADS)

Shinohara, Shunjiro; Matsuoka, Norikazu; Yoshinaka, Toshiro

1998-10-01

Control of the plasma profile has been carried out, using the voltage biasing method in the large diameter (45 cm) RF (radio frequency) produced plasma in the presence of the uniform magnetic field (less than 1200 G). Under the low filling pressure condition of 0.16 mTorr, changing the biasing voltages to the three individual end plates with concentric circular ring shapes, the radial electron density (about 10^10 cm-3) profile could be changed from the hollow to the peaked one. On the contrary, the nearly flat electron temperature (several eV) profile did not change appreciably. The azimuthal rotation velocity measured by the Mach probe, i.e. directional probe, showed the different radial profiles (but nearly uniform along the axis) depending on the biasing voltage. This velocity became slower with the low magnetic field (less than 200 G) or in the higher pressure regime up to 20 mTorr with the higher electron density. The experimental results by other biasing methods will also be presented.

Symmetric operation of the resonant exchange qubit

NASA Astrophysics Data System (ADS)

Malinowski, Filip K.; Martins, Frederico; Nissen, Peter D.; Fallahi, Saeed; Gardner, Geoffrey C.; Manfra, Michael J.; Marcus, Charles M.; Kuemmeth, Ferdinand

2017-07-01

We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated rf pulses. We find that the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between rf drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to 32 π pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of symmetric configurations in the operation of triple-dot qubits.

Primary experimental study on safety of deep brain stimulation in RF electromagnetic field.

PubMed

Jun, Xu; Luming, Li; Hongwei, Hao

2009-01-01

With the rapid growth of clinical application of Deep Brain Stimulation, its safety and functional concern in the electromagnetic field, another pollution becoming much more serious, has become more and more significant. Meanwhile, the measuring standards on Electromagnetic Compatibility (EMC) for DBS are still incomplete. Particularly, the knowledge of the electromagnetic field induced signals on the implanted lead is ignorant while some informal reports some side effects. This paper briefly surmised the status of EMC standards on implantable medical devices. Based on the EMC experiments of DBS device we developed, two experiments for measuring the induced voltage of the deep brain stimulator in RF electromagnetic field were reported. The measured data showed that the induced voltage in some frequency was prominent, for example over 2V. As a primary research, we think these results would be significant to cause researcher to pay more attention to the EMC safety problem and biological effects of the induced voltage in deep brain stimulation and other implantable devices.

Characterization and reduction of gradient-induced eddy currents in the RF shield of a TEM resonator.

PubMed

Alecci, Marcello; Jezzard, Peter

2002-08-01

Radiofrequency (RF) shields that surround MRI transmit/receive coils should provide effective RF screening, without introducing unwanted eddy currents induced by gradient switching. Results are presented from a detailed examination of an effective RF shield design for a prototype transverse electromagnetic (TEM) resonator suitable for use at 3 Tesla. It was found that effective RF shielding and low eddy current sensitivity could be achieved by axial segmentation (gap width = 2.4 mm) of a relatively thick (35 microm) copper shield, etched on a kapton polyimide substrate. This design has two main advantages: first, it makes the TEM less sensitive to the external environment and RF interference; and second, it makes the RF shield mechanically robust and easy to handle and assemble. Copyright 2002 Wiley-Liss, Inc.

A voltage-division-type low-jitter self-triggered repetition-rate switch.

PubMed

Su, Jian-Cang; Zeng, Bo; Gao, Peng-Cheng; Li, Rui; Wu, Xiao-Long; Zhao, Liang

2016-10-01

A voltage-division-type (V/N) low-jitter self-triggered multi-stage switch is put forward. It comprises of a triggered corona gap, several quasi-uniform-field gaps, and an inversion inductor. When the corona gap is in the stage of self-breakdown, the multi-stage gaps are triggered and the switch is closed via an over-voltage. This type of V/N switch has the advantage of compact structure since the auxiliary components like the gas-blowing system and the triggered system are eliminated from the whole system. It also has advantages such as low breakdown jitter and high energy efficiency. The dependence of the self-triggered voltage on the over-voltage factor and the switch operating voltage is deduced. A switch of this type is designed and fabricated and experiments to research its characteristics are conducted. The results show that this switch can operate on a voltage of 1 MV at 50 Hz and can generate 1000 successive pulses with a jitter as low as 3% and an energy efficiency as high as 90%. This V/N switch can work under a high repetition rate with a long lifetime.

Spatial Power Combining Amplifier for Ground and Flight Applications

NASA Astrophysics Data System (ADS)

Velazco, J. E.; Taylor, M.

2016-11-01

Vacuum-tube amplifiers such as klystrons and traveling-wave tubes are the workhorses of high-power microwave radiation generation. At JPL, vacuum tubes are extensively used in ground and flight missions for radar and communications. Vacuum tubes use electron beams as the source of energy to achieve microwave power amplification. Such electron beams operate at high kinetic energies and thus require high voltages to function. In addition, vacuum tubes use compact cavity and waveguide structures that hold very intense radio frequency (RF) fields inside. As the operational frequency is increased, the dimensions of these RF structures become increasingly smaller. As power levels and operational frequencies are increased, the highly intense RF fields inside of the tubes' structures tend to arc and create RF breakdown. In the case of very high-power klystrons, electron interception - also known as body current - can produce thermal runaway of the cavities that could lead to the destruction of the tube. The high voltages needed to power vacuum tubes tend to require complicated and cumbersome power supplies. Consequently, although vacuum tubes provide unmatched high-power microwaves, they tend to arc, suffer from thermal issues, and require failure-prone high-voltage power supplies. In this article, we present a new concept for generating high-power microwaves that we refer to as the Spatial Power Combining Amplifier (SPCA). The SPCA is very compact, requires simpler, lower-voltage power supplies, and uses a unique power-combining scheme wherein power from solid-state amplifiers is coherently combined. It is a two-port amplifier and can be used inline as any conventional two-port amplifier. It can deliver its output power to a coaxial line, a waveguide, a feed, or to any microwave load. A key feature of this new scheme is the use of higher-order-mode microwave structures to spatially divide and combine power. Such higher-order-mode structures have considerably larger cross-sections than comparable klystrons and traveling-wave tube counterparts and thus avoid RF breakdown and thermal issues common to vacuum tubes. We present a basic description of the SPCA mechanism and initial results of an S-band (2.4 GHz) 100-W, 45-dB gain SPCA prototype. We also discuss future X-band (8.4 GHz), Ka-band (32 GHz), and W-band (94 GHz) SPCA designs for both radar and communications applications.

Linear bunchers and half-frequency bunching method

NASA Astrophysics Data System (ADS)

Tang, J. Y.; Jiang, J. Z.; Shi, A. M.; Yin, Z. K.; Wang, Y. F.

2000-12-01

A new buncher system consisting of two bunchers has been designed and constructed for HIRFL injector cyclotron, working at the SFC acceleration modes of H=1 and H=3, respectively. The bunchers use saw-tooth RF waveform, but with double-gap drift tube electrodes and single-gap grid electrodes, respectively. The special merit of the design is introduction of the half-frequency bunching mode, utilizing half of the cyclotron RF frequency. With this method, a perfect longitudinal match between the injector SFC and the main cyclotron SSC has been reached theoretically, compared to the original efficiency of 50% for most cases. Detailed studies have been made concerning space charge effects, longitudinal dispersions through the yoke hole and the spiral inflector, and non-linearity in both the RF waveform and the stray electric field of electrodes.

Ephaptic coupling rescues conduction failure in weakly coupled cardiac tissue with voltage-gated gap junctions

NASA Astrophysics Data System (ADS)

Weinberg, S. H.

2017-09-01

Electrical conduction in cardiac tissue is usually considered to be primarily facilitated by gap junctions, providing a pathway between the intracellular spaces of neighboring cells. However, recent studies have highlighted the role of coupling via extracellular electric fields, also known as ephaptic coupling, particularly in the setting of reduced gap junction expression. Further, in the setting of reduced gap junctional coupling, voltage-dependent gating of gap junctions, an oft-neglected biophysical property in computational studies, produces a positive feedback that promotes conduction failure. We hypothesized that ephaptic coupling can break the positive feedback loop and rescue conduction failure in weakly coupled cardiac tissue. In a computational tissue model incorporating voltage-gated gap junctions and ephaptic coupling, we demonstrate that ephaptic coupling can rescue conduction failure in weakly coupled tissue. Further, ephaptic coupling increased conduction velocity in weakly coupled tissue, and importantly, reduced the minimum gap junctional coupling necessary for conduction, most prominently at fast pacing rates. Finally, we find that, although neglecting gap junction voltage-gating results in negligible differences in well coupled tissue, more significant differences occur in weakly coupled tissue, greatly underestimating the minimal gap junctional coupling that can maintain conduction. Our study suggests that ephaptic coupling plays a conduction-preserving role, particularly at rapid heart rates.

Intermodulation components in the transmitter RF output due to high voltage power supply ripple

NASA Technical Reports Server (NTRS)

Finnegan, E. J.

1977-01-01

The economic feasibility of eliminating the 400-Hz motor-generator sets used to provide power to the high-voltage power supplies of the 20-kW transmitters and replace them with a 60-Hz high-voltage power supply was investigated. The efficiency of a power supply that runs from the 60-Hz line directly would pay for itself in about seven years and could be designed so that the transmitter would meet all the incidental phase and amplitude modulation specifications.

47 CFR 73.51 - Determining operating power.

Code of Federal Regulations, 2010 CFR

2010-10-01

... modulation Maximum rated carrier power Class of amplifier 0.70 Plate 1 kW or less .80 Plate 2.5 kW and over .35 Low level 0.25 kW and over B .65 Low level 0.25 kW and over BC1 .35 Grid 0.25 kW and over 1 All...'s input power directly from the RF voltage, RF current, and phase angle; or (2) calculating the...

Inductive current startup in large tokamaks with expanding minor radius and rf assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.

1984-02-01

Auxiliary rf heating of electrons before and during the current-rise phase of a large tokamak, such as the Fusion Engineering Device (R = 4.8 m, a = 1.3 m, sigma = 1.6, B/sub T/ = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at approx. 90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 19/ m/sup -3/) near themore » upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub 0/ approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to approx. 100 V without rf assist). During the subsequent plasma expansion and current ramp phase, a combination of rf heating (up to 5 MW) and current profile control leads to a substantial savings in volt-seconds by: (1) minimizing the resistive flux consumption; and (2) maintaining the internal flux at or near the flat profile limit.« less

Inductive current startup in large tokamaks with expanding minor radius and RF assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.

1983-01-01

Auxiliary RF heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device, is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at approx.90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 19/m/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sup 0/ approx.< 0.4 m)more » current channel to be established with a relatively low initial loop voltage (approx.< 25 V as opposed to approx.100 V without RF assist). During the subsequent plasma expansion and current ramp phase, additional RF power is introduced to reduce volt-second consumption due to plasma resistance. To study the preheating phase, a near classical particle and energy transport model is developed to estimate the electron heating efficiency in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter.« less

Feasibility of Frequency-Modulated Wireless Transmission for a Multi-Purpose MEMS-Based Accelerometer

PubMed Central

Sabato, Alessandro; Feng, Maria Q.

2014-01-01

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy—especially at very low frequencies—have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline. PMID:25198003

An Autonomous Wireless Sensor Node With Asynchronous ECG Monitoring in 0.18 μ m CMOS.

PubMed

Mansano, Andre L; Li, Yongjia; Bagga, Sumit; Serdijn, Wouter A

2016-06-01

The design of a 13.56 MHz/402 MHz autonomous wireless sensor node with asynchronous ECG monitoring for near field communication is presented. The sensor node consists of an RF energy harvester (RFEH), a power management unit, an ECG readout, a data encoder and an RF backscattering transmitter. The energy harvester supplies the system with 1.25 V and offers a power conversion efficiency of 19% from a -13 dBm RF source at 13.56 MHz. The power management unit regulates the output voltage of the RFEH to supply the ECG readout with VECG = 0.95 V and the data encoder with VDE = 0.65 V . The ECG readout comprises an analog front-end (low noise amplifier and programmable voltage to current converter) and an asynchronous level crossing ADC with 8 bits resolution. The ADC output is encoded by a pulse generator that drives a backscattering transmitter at 402 MHz. The total power consumption of the sensor node circuitry is 9.7 μ W for a data rate of 90 kb/s and a heart rate of 70 bpm. The chip has been designed in a 0.18 μm CMOS process and shows superior RF input power sensitivity and lower power consumption when compared to previous works.

Feasibility of frequency-modulated wireless transmission for a multi-purpose MEMS-based accelerometer.

PubMed

Sabato, Alessandro; Feng, Maria Q

2014-09-05

Recent advances in the Micro Electro-Mechanical System (MEMS) technology have made wireless MEMS accelerometers an attractive tool for Structural Health Monitoring (SHM) of civil engineering structures. To date, sensors' low sensitivity and accuracy--especially at very low frequencies--have imposed serious limitations for their application in monitoring large-sized structures. Conventionally, the MEMS sensor's analog signals are converted to digital signals before radio-frequency (RF) wireless transmission. The conversion can cause a low sensitivity to the important low-frequency and low-amplitude signals. To overcome this difficulty, the authors have developed a MEMS accelerometer system, which converts the sensor output voltage to a frequency-modulated signal before RF transmission. This is achieved by using a Voltage to Frequency Conversion (V/F) instead of the conventional Analog to Digital Conversion (ADC). In this paper, a prototype MEMS accelerometer system is presented, which consists of a transmitter and receiver circuit boards. The former is equipped with a MEMS accelerometer, a V/F converter and a wireless RF transmitter, while the latter contains an RF receiver and a F/V converter for demodulating the signal. The efficacy of the MEMS accelerometer system in measuring low-frequency and low-amplitude dynamic responses is demonstrated through extensive laboratory tests and experiments on a flow-loop pipeline.

Ultralow drive voltage silicon traveling-wave modulator.

PubMed

Baehr-Jones, Tom; Ding, Ran; Liu, Yang; Ayazi, Ali; Pinguet, Thierry; Harris, Nicholas C; Streshinsky, Matt; Lee, Poshen; Zhang, Yi; Lim, Andy Eu-Jin; Liow, Tsung-Yang; Teo, Selin Hwee-Gee; Lo, Guo-Qiang; Hochberg, Michael

2012-05-21

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.

Design and modeling of a planar probe for power measurements in a capacitive plasma sheath

NASA Astrophysics Data System (ADS)

Gahan, D.; Hopkins, M. B.; Ellingboe, A. R.

2004-09-01

The design and modeling of a planar probe for power measurement in a capacitive RF sheath is described. The probe is to be biased negatively, using a DC power supply, while simultaneously being driven with an RF voltage. A simple model has been developed which describes the voltage, current and impedance from the generator to the probe surface incorporating the transmission line. A conventional method to determine the power through such a probe would be to measure the voltage, current and their phase relationship very close to the probe surface. This can be very difficult to do with much accuracy since the load is almost purely reactive. An alternative method is discussed. The model shows that for certain lengths of transmission line there exists a point on that transmission line where the imaginary impedance goes to zero. If the power is measured at this point where the current and voltage are almost in phase the result should be more accurate. A brief description of the model is given along with some results for its validation. The operation of the power sensor used is also explained.

New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

PubMed Central

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. PMID:22163968

New analysis and design of a RF rectifier for RFID and implantable devices.

PubMed

Liu, Dong-Sheng; Li, Feng-Bo; Zou, Xue-Cheng; Liu, Yao; Hui, Xue-Mei; Tao, Xiong-Fei

2011-01-01

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from -15 dBm to -4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitable to passive UHF RFID tag IC and implantable devices.

Pulsed Laser Illumination of Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland; Jenkins, Philip; Landis, Geoffrey A.

1994-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic array receivers to provide remote power. The induction FEL and the radio-frequency (RF) FEL both produce pulsed rather than continuous output. In this work, we investigate cell response to pulsed laser light which simulates the RF FEL format, producing 50 ps pulses at a frequency of 78 MHz. A variety of Si, GaAs, CaSb and CdInSe2 (CIS) solar cells are tested at average incident powers between 4 mW/sq cm and 425 mW/sq cm. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced by using a pulsed laser source compared to constant illumination at the same wavelength. Because the pulse separation is less than or approximately equal to the minority carrier lifetime, the illumination conditions are effectively those of a continuous wave laser. The time dependence of the voltage and current response of the cells are also measured using a sampling oscilloscope equipped with a high frequency voltage probe and current transformer. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments shows that the RF FEL pulse format yields much more efficient photovoltaic conversion of light than does an induction FEL pulse format.

Automatic control of finite element models for temperature-controlled radiofrequency ablation

PubMed Central

Haemmerich, Dieter; Webster, John G

2005-01-01

Background The finite element method (FEM) has been used to simulate cardiac and hepatic radiofrequency (RF) ablation. The FEM allows modeling of complex geometries that cannot be solved by analytical methods or finite difference models. In both hepatic and cardiac RF ablation a common control mode is temperature-controlled mode. Commercial FEM packages don't support automating temperature control. Most researchers manually control the applied power by trial and error to keep the tip temperature of the electrodes constant. Methods We implemented a PI controller in a control program written in C++. The program checks the tip temperature after each step and controls the applied voltage to keep temperature constant. We created a closed loop system consisting of a FEM model and the software controlling the applied voltage. The control parameters for the controller were optimized using a closed loop system simulation. Results We present results of a temperature controlled 3-D FEM model of a RITA model 30 electrode. The control software effectively controlled applied voltage in the FEM model to obtain, and keep electrodes at target temperature of 100°C. The closed loop system simulation output closely correlated with the FEM model, and allowed us to optimize control parameters. Discussion The closed loop control of the FEM model allowed us to implement temperature controlled RF ablation with minimal user input. PMID:16018811

High Current Density Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

Tube - device for generating high levels of RF power DARPA Defense Advanced Research Agency PBG Photonic band gap W- Band 75-111 GHz dB Decibels GHz...Extended interaction klystron 1. Introduction All RF vacuum electron sources require a high quality electron beam for efficient operation. Research on...with long life. Pres- ently, only thermionic dispenser cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a

Optimization of the performance of a tandem microchannel plate detector as a function of interplate spacing and voltage

NASA Technical Reports Server (NTRS)

Rogers, D.; Malina, R. F.

1982-01-01

The effect of varying the size of the gap voltage and spacing on the performance of a tandem pair of microchannel plates (MCP) is investigated. Results show that increasing the voltage in the gap increases the gain of the pair and also produces a narrower Gaussian pulse-height distribution, although beyond a critical voltage the gain of the channel plate pair is found to plateau. A model is developed which explains the nonlinear gain behavior of individual microchannels and the behavior of the electron cloud emitted from the first MCP as it spreads out between the two MCPs and hits the surface of the second. The model calculates the plateau voltage as a function of the gap size, the gain of each MCP, and the diameter of the channels, and is found to show good agreement with the observed results. It is concluded that interplate gaps of up to several millimeters can be accommodated without a significant degradation in pulse-height distribution.

Effect of electrical coupling on ionic current and synaptic potential measurements.

PubMed

Rabbah, Pascale; Golowasch, Jorge; Nadim, Farzan

2005-07-01

Recent studies have found electrical coupling to be more ubiquitous than previously thought, and coupling through gap junctions is known to play a crucial role in neuronal function and network output. In particular, current spread through gap junctions may affect the activation of voltage-dependent conductances as well as chemical synaptic release. Using voltage-clamp recordings of two strongly electrically coupled neurons of the lobster stomatogastric ganglion and conductance-based models of these neurons, we identified effects of electrical coupling on the measurement of leak and voltage-gated outward currents, as well as synaptic potentials. Experimental measurements showed that both leak and voltage-gated outward currents are recruited by gap junctions from neurons coupled to the clamped cell. Nevertheless, in spite of the strong coupling between these neurons, the errors made in estimating voltage-gated conductance parameters were relatively minor (<10%). Thus in many cases isolation of coupled neurons may not be required if a small degree of measurement error of the voltage-gated currents or the synaptic potentials is acceptable. Modeling results show, however, that such errors may be as high as 20% if the gap-junction position is near the recording site or as high as 90% when measuring smaller voltage-gated ionic currents. Paradoxically, improved space clamp increases the errors arising from electrical coupling because voltage control across gap junctions is poor for even the highest realistic coupling conductances. Furthermore, the common procedure of leak subtraction can add an extra error to the conductance measurement, the sign of which depends on the maximal conductance.

Effect of actuating voltage and discharge gap on plasma assisted detonation initiation process

NASA Astrophysics Data System (ADS)

Siyin, ZHOU; Xueke, CHE; Wansheng, NIE; Di, WANG

2018-06-01

The influence of actuating voltage and discharge gap on plasma assisted detonation initiation by alternating current dielectric barrier discharge was studied in detail. A loose coupling method was used to simulate the detonation initiation process of a hydrogen–oxygen mixture in a detonation tube under different actuating voltage amplitudes and discharge gap sizes. Both the discharge products and the detonation forming process assisted by the plasma were analyzed. It was found that the patterns of the temporal and spatial distributions of discharge products in one cycle keep unchanged as changing the two discharge operating parameters. However, the adoption of a higher actuating voltage leads to a higher active species concentration within the discharge zone, and atom H is the most sensitive to the variations of the actuating voltage amplitude among the given species. Adopting a larger discharge gap results in a lower concentration of the active species, and all species have the same sensitivity to the variations of the gap. With respect to the reaction flow of the detonation tube, the corresponding deflagration to detonation transition (DDT) time and distance become slightly longer when a higher actuating voltage is chosen. The acceleration effect of plasma is more prominent with a smaller discharge gap, and the benefit builds gradually throughout the DDT process. Generally, these two control parameters have little effect on the amplitude of the flow field parameters, and they do not alter the combustion degree within the reaction zone.

Single-crystalline graphene radio-frequency nanoswitches

NASA Astrophysics Data System (ADS)

Li, Peng; Cui, Tianhong

2015-07-01

Growth of monolayer single-crystalline graphene (SCG) using the low-pressure chemical vapor deposition method is reported. Graphene’s superb quality and single-crystalline nature were characterized and verified by Raman microscopy, atomic force microscopy, and carrier mobility measurement. Radio-frequency (RF) nanoelectromechanical switches based on coplanar waveguide double-clamped SCG membrane were achieved, and the superb properties of SCG enable the switches to operate at a pull-in voltage as low as 1 V, with switch time in the nanosecond regime. Owing to their single-crystalline nature, the switches’ lifetime (>5000 times) is much longer than that of polycrystalline graphene ones reported. The RF devices exhibit good isolation (-30 dB at 40 GHz (Ka band)), which can be further improved by SCG’s conductivity variation due to actuation voltage.

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting

PubMed Central

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-01-01

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from −40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions. PMID:28282910

Enhanced Passive RF-DC Converter Circuit Efficiency for Low RF Energy Harvesting.

PubMed

Chaour, Issam; Fakhfakh, Ahmed; Kanoun, Olfa

2017-03-09

For radio frequency energy transmission, the conversion efficiency of the receiver is decisive not only for reducing sending power, but also for enabling energy transmission over long and variable distances. In this contribution, we present a passive RF-DC converter for energy harvesting at ultra-low input power at 868 MHz. The novel converter consists of a reactive matching circuit and a combined voltage multiplier and rectifier. The stored energy in the input inductor and capacitance, during the negative wave, is conveyed to the output capacitance during the positive one. Although Dickson and Villard topologies have principally comparable efficiency for multi-stage voltage multipliers, the Dickson topology reaches a better efficiency within the novel ultra-low input power converter concept. At the output stage, a low-pass filter is introduced to reduce ripple at high frequencies in order to realize a stable DC signal. The proposed rectifier enables harvesting energy at even a low input power from -40 dBm for a resistive load of 50 kΩ. It realizes a significant improvement in comparison with state of the art solutions.

Fabrication and deformation behaviour of multilayer Al2O3/Ti/TiO2 nanotube arrays.

PubMed

Baradaran, S; Basirun, W J; Zalnezhad, E; Hamdi, M; Sarhan, Ahmed A D; Alias, Y

2013-04-01

In this study, titanium thin films were deposited on alumina substrates by radio frequency (RF) magnetron sputtering. The mechanical properties of the Ti coatings were evaluated in terms of adhesion strength at various RF powers, temperatures, and substrate bias voltages. The coating conditions of 400W of RF power, 250°C, and a 75V substrate bias voltage produced the strongest coating adhesion, as obtained by the Taguchi optimisation method. TiO2 nanotube arrays were grown as a second layer on the Ti substrates using electrochemical anodisation at a constant potential of 20V and anodisation times of 15min, 45min, and 75min in a NH4F electrolyte solution (75 ethylene glycol: 25 water). The anodised titanium was annealed at 450°C and 650°C in a N2 gas furnace to obtain different phases of titania, anatase and rutile, respectively. The mechanical properties of the anodised layer were investigated by nanoindentation. The results indicate that Young's modulus and hardness increased with annealing temperature to 650°C. Copyright © 2013 Elsevier Ltd. All rights reserved.

Ion velocities in the presheath of electronegative, radio-frequency plasmas measured by low-energy cutoff

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolewski, Mark A.; Wang, Yicheng; Goyette, Amanda

2016-07-11

Simple kinematic considerations indicate that, under certain conditions in radio-frequency (rf) plasmas, the amplitude of the low-energy peak in ion energy distributions (IEDs) measured at an electrode depends sensitively on ion velocities upstream, at the presheath/sheath boundary. By measuring this amplitude, the velocities at which ions exit the presheath can be determined and long-standing controversies regarding presheath transport can be resolved. Here, IEDs measured in rf-biased, inductively coupled plasmas in CF{sub 4} gas determined the presheath exit velocities of all significant positive ions: CF{sub 3}{sup +}, CF{sub 2}{sup +}, CF{sup +}, and F{sup +}. At higher bias voltages, we detectedmore » essentially the same velocity for all four ions. For all ions, measured velocities were significantly lower than the Bohm velocity and the electropositive ion sound speed. Neither is an accurate boundary condition for rf sheaths in electronegative gases: under certain low-frequency, high-voltage criteria defined here, either yields large errors in predicted IEDs. These results indicate that many widely used sheath models will need to be revised.« less

RF magnetized ring-shaped plasma for target utilization obtained with circular magnet monopole arrangement

NASA Astrophysics Data System (ADS)

Amzad Hossain, Md.; Ohtsu, Yasunori

2018-01-01

We proposed a new setup for generating outer ring-shaped radio frequency (RF) magnetized plasma near the chamber wall using monopole magnet setups. Three monopole magnet setups with (a) R = 5 mm, (b) R = 20 mm, and (c) R = 35 mm were investigated, where R is the gap between the magnets in consecutive circles. The distributions of the two dimensional magnetic flux lines, the absolute value of the horizontal magnetic flux density, and the discharge voltage were investigated for the proposed setups to produce outer ring-shaped plasma. A highly luminous ring-shaped plasma was observed for the setup (a), whereas multi-ring discharges were observed for the setups (b) and (c). It was found that the electron temperature decreases with increasing gas pressure for all cases. The electron temperatures were 2.42, 1.71, and 1.15 eV at an Ar gas pressure of 4 Pa for setups (a), (b), and (c), respectively. The plasma density was approximately the same for setups (b) and (c) at all gas pressures. The highest plasma densities were 6.26 × 1015, 1.06 × 1016, and 1.11 × 1016 m-3 at 5 Pa for setups (a), (b), and (c), respectively. It was found that the electron mean free path was 41.4, 63.17, and 84.66 mm at an Ar gas pressure of 5 Pa for setups (a), (b), and (c), respectively. The electron neutral collision frequency for setup (a) was higher than those for setups (b) and (c) at a constant RF power of 40 W and an axial distance of z = 13 mm from the target surface. The radial profile of the ion saturation current for setup (b) was more uniform than those for setups (a) and (c).

Recirculating planar magnetrons: simulations and experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franzi, Matthew; Gilgenbach, Ronald; French, David

2011-07-01

The Recirculating Planar Magnetron (RPM) is a novel crossed-field device whose geometry is expected to reduce thermal load, enhance current yield as well as ease the geometric limitations in scaling to high RF frequencies as compared to the conventional cylindrical magnetrons. The RPM has two different adaptations: A. Axial B field and radial E field; B. Radial B field and axial E field. The preliminary configuration (A) to be used in experiments at the University of Michigan consists of two parallel planar sections which join on either end by cylindrical regions to form a concentric extruded ellipse. Similar to conventionalmore » magnetrons, a voltage across the AK gap in conjunction with an axial magnetic field provides the electrons with an ExB drift. The device is named RPM because the drifting electrons recirculate from one planar region to the other. The drifting electrons interact with the resonantly tuned slow wave structure on the anode causing spoke formation. These electron spokes drive a RF electric field in the cavities from which RF power may be extracted to Waveguides. The RPM may be designed in either a conventional configuration with the anode on the outside, for simplified extraction, or as an inverted magnetron with the anode at the inner conductor, for fast start-up. Currently, experiments at the Pulsed Power and Microwave Laboratory at the University of Michigan are in the setup and design phase. A conventional RPM with planar cavities is to be installed on the Michigan Electron Long Beam Accelerator (MELBA) and is anticipated to operate at -200kV, 0.2T with a beam current of 1-10 kA at 1GHz. The conventional RPM consists of 12 identical planar cavities, 6 on each planar side, with simulated quality factor of 20.« less

Fast shut-down protection system for radio frequency breakdown and multipactor testing.

PubMed

Graves, T P; Hanson, P; Michaelson, J M; Farkas, A D; Hubble, A A

2014-02-01

Radio frequency (RF) breakdown such as multipactor or ionization breakdown is a device-limiting phenomenon for on-orbit spacecraft used for communication, navigation, or other RF payloads. Ground testing is therefore part of the qualification process for all high power components used in these space systems. This paper illustrates a shut-down protection system to be incorporated into multipactor/ionization breakdown ground testing for susceptible RF devices. This 8 channel system allows simultaneous use of different diagnostic classes and different noise floors. With initiation of a breakdown event, diagnostic signals increase above a user-specified level, which then opens an RF switch to eliminate RF power from the high power amplifier. Examples of this system in use are shown for a typical setup, illustrating the reproducibility of breakdown threshold voltages and the lack of multipactor conditioning. This system can also be utilized to prevent excessive damage to RF components in tests with sensitive or flight hardware.

RF extraction issues in the relativistic klystron amplifiers

NASA Astrophysics Data System (ADS)

Serlin, Victor; Friedman, Moshe; Lampe, Martin; Hubbard, Richard F.

1994-05-01

Relativistic klystron amplifiers (RKAs) were successfully operated at NRL in several frequency regimes and power levels. In particular, an L-band RKA was optimized for high- power rf extraction into the atmosphere and an S-band RKA was operated, both in a two-beam and a single-beam configuration. At L-band the rf extraction at maximum power levels (>= 15 GW) was hindered by pulse shortening and poor repeatability. Preliminary investigation showed electron emission in the radiating horn, due to very high voltages associated with the multi-gigawatt rf power levels. This electron current constituted an electric load in parallel with the radiating antenna, and precipitated the rf pulse collapse. At S-band the peak extracted power reached 1.7 GW with power efficiency approximately 50%. However, pulse shortening limited the duration to approximately 50 nanoseconds. The new triaxial RKA promises to solve many of the existing problems.

RF Coupling into the Fuel Tank of a Large Transport Aircraft from Intentionally Transmitting Peds in the Passenger Cabin

NASA Technical Reports Server (NTRS)

Nguyen, Truong X.; Dudley, Kenneth L.; Scearce, Stephen A.; Ely, Jay J.; Richardson, Robert E.; Hatfield, Michael O.

2000-01-01

An investigation was performed to study the potential for radio frequency (RF) power radiated from Portable Electronic Devices (PEDs) to create an arcing/sparking event within the fuel tank of a large transport aircraft. This paper describes the experimental methods used for measuring RF coupling to the fuel tank and Fuel Quantity Indication System (FQIS) wiring from PED sources located in the passenger cabin. To allow comparison of voltage/current data obtained in a laboratory chamber FQIS installation to an actual aircraft FQIS installation, aircraft fuel tank RF reverberation characteristics were also measured. Results from the measurements, along with a survey of threats from typical intentional transmitting PEDs are presented. The resulting worst-case power coupled onto fuel tank FQIS wiring is derived. The same approach can be applied to measure RF coupling into various other aircraft systems.

Spin transfer driven resonant expulsion of a magnetic vortex core for efficient rf detector

NASA Astrophysics Data System (ADS)

Menshawy, S.; Jenkins, A. S.; Merazzo, K. J.; Vila, L.; Ferreira, R.; Cyrille, M.-C.; Ebels, U.; Bortolotti, P.; Kermorvant, J.; Cros, V.

2017-05-01

Spin transfer magnetization dynamics have led to considerable advances in Spintronics, including opportunities for new nanoscale radiofrequency devices. Among the new functionalities is the radiofrequency (rf) detection using the spin diode rectification effect in spin torque nano-oscillators (STNOs). In this study, we focus on a new phenomenon, the resonant expulsion of a magnetic vortex in STNOs. This effect is observed when the excitation vortex radius, due to spin torques associated to rf currents, becomes larger than the actual radius of the STNO. This vortex expulsion is leading to a sharp variation of the voltage at the resonant frequency. Here we show that the detected frequency can be tuned by different parameters; furthermore, a simultaneous detection of different rf signals can be achieved by real time measurements with several STNOs having different diameters. This result constitutes a first proof-of-principle towards the development of a new kind of nanoscale rf threshold detector.

Power matching between plasma generation and electrostatic acceleration in helicon electrostatic thruster

NASA Astrophysics Data System (ADS)

Ichihara, D.; Nakagawa, Y.; Uchigashima, A.; Iwakawa, A.; Sasoh, A.; Yamazaki, T.

2017-10-01

The effects of a radio-frequency (RF) power on the ion generation and electrostatic acceleration in a helicon electrostatic thruster were investigated with a constant discharge voltage of 300 V using argon as the working gas at a flow rate either of 0.5 Aeq (Ampere equivalent) or 1.0 Aeq. A RF power that was even smaller than a direct-current (DC) discharge power enhanced the ionization of the working gas, thereby both the ion beam current and energy were increased. However, an excessively high RF power input resulted in their saturation, leading to an unfavorable increase in an ionization cost with doubly charged ion production being accompanied. From the tradeoff between the ion production by the RF power and the electrostatic acceleration made by the direct current discharge power, the thrust efficiency has a maximum value at an optimal RF to DC discharge power ratio of 0.6 - 1.0.

Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Lebedev, V.

State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signalmore » on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.« less

Compact RF ion source for industrial electrostatic ion accelerator

NASA Astrophysics Data System (ADS)

Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

2016-02-01

Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described.

Compact RF ion source for industrial electrostatic ion accelerator.

PubMed

Kwon, Hyeok-Jung; Park, Sae-Hoon; Kim, Dae-Il; Cho, Yong-Sub

2016-02-01

Korea Multi-purpose Accelerator Complex is developing a single-ended electrostatic ion accelerator to irradiate gaseous ions, such as hydrogen and nitrogen, on materials for industrial applications. ELV type high voltage power supply has been selected. Because of the limited space, electrical power, and robust operation, a 200 MHz RF ion source has been developed. In this paper, the accelerator system, test stand of the ion source, and its test results are described.

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

NASA Astrophysics Data System (ADS)

Lee, J.; Gao, W.; Li, Z.; Hodgson, M.; Metson, J.; Gong, H.; Pal, U.

2005-05-01

Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made.

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {>=}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {>=}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {ge}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {ge}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Design of RF MEMS switches without pull-in instability

NASA Astrophysics Data System (ADS)

Proctor, W. Cyrus; Richards, Gregory P.; Shen, Chongyi; Skorczewski, Tyler; Wang, Min; Zhang, Jingyan; Zhong, Peng; Massad, Jordan E.; Smith, Ralph

2010-04-01

Micro-electro-mechanical systems (MEMS) switches for radio-frequency (RF) signals have certain advantages over solid-state switches, such as lower insertion loss, higher isolation, and lower static power dissipation. Mechanical dynamics can be a determining factor for the reliability of RF MEMS. The RF MEMS ohmic switch discussed in this paper consists of a plate suspended over an actuation pad by four double-cantilever springs. Closing the switch with a simple step actuation voltage typically causes the plate to rebound from its electrical contacts. The rebound interrupts the signal continuity and degrades the performance, reliability and durability of the switch. The switching dynamics are complicated by a nonlinear, electrostatic pull-in instability that causes high accelerations. Slow actuation and tailored voltage control signals can mitigate switch bouncing and effects of the pull-in instability; however, slow switching speed and overly-complex input signals can significantly penalize overall system-level performance. Examination of a balanced and optimized alternative switching solution is sought. A step toward one solution is to consider a pull-in-free switch design. In this paper, determine how simple RC-circuit drive signals and particular structural properties influence the mechanical dynamics of an RF MEMS switch designed without a pull-in instability. The approach is to develop a validated modeling capability and subsequently study switch behavior for variable drive signals and switch design parameters. In support of project development, specifiable design parameters and constraints will be provided. Moreover, transient data of RF MEMS switches from laser Doppler velocimetry will be provided for model validation tasks. Analysis showed that a RF MEMS switch could feasibly be designed with a single pulse waveform and no pull-in instability and achieve comparable results to previous waveform designs. The switch design could reliably close in a timely manner, with small contact velocity, usually with little to no rebound even when considering manufacturing variability.

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, Ka-Ngo

1996-01-01

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted.

Design and Vertical Tests of SPS-series Double-Quarter Wave (DQW) Cavity Prototypes for the HL-LHC Crab Cavity System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verdú-Andrés, S.; et al.

Crab crossing is essential for high-luminosity colliders. The High Luminosity Large Hadron Collider (HL-LHC) will equip one of its Interaction Points (IP1) with Double-Quarter Wave (DQW) crab cavities. A DQW cavity is a new generation of deflecting RF cavities that stands out for its compactness and broad frequency separation between fundamental and first high-order modes. The deflecting kick is provided by its fundamental mode. Each HL-LHC DQW cavity shall provide a nominal deflecting voltage of 3.4 MV, although up to 5.0 MV may be required. A Proof-of-Principle (PoP) DQW cavity was limited by quench at 4.6 MV. This paper describesmore » a new, highly optimized cavity, designated DQW SPS-series, which satisfies dimensional, cryogenic, manufacturing and impedance requirements for beam tests at SPS and operation in LHC. Two prototypes of this DQW SPS-series were fabricated by US industry and cold tested after following conventional SRF surface treatment. Both units outperformed the PoP cavity, reaching a deflecting voltage of 5.3-5.9 MV. This voltage - the highest reached by a DQW cavity - is well beyond the nominal voltage of 3.4 MV and may even operate at the ultimate voltage of 5.0MVwith sufficient margin. This paper covers fabrication, surface preparation and cryogenic RF test results and implications.« less

Effect of electrode gap on the sensing properties of multiwalled carbon nanotubes based gas sensor

NASA Astrophysics Data System (ADS)

Saheed, Mohamed Shuaib Mohamed; Mohamed, Norani Muti; Burhanudin, Zainal Arif

2016-11-01

Vertically aligned multiwalled carbon nanotubes (MWCNT) were grown on Si substrate coated with alumina and iron using chemical vapor deposition. Electrode gap of 10, 25 and 50 µm were adopted to determine the effect of varying gap spacing on the sensing properties such as voltage breakdown, sensitivity and selectivity for three gases namely argon, carbon dioxide and ammonia. Argon has the lowest voltage breakdown for every electrode gap. The fabricated MWCNT based gas sensor drastically reduced the voltage breakdown by 89.5% when the electrode spacing is reduced from 50 µm to 10 µm. The reduction is attributed to the high non-uniform electric field between the electrodes caused by the protrusion of nanotips. The sensor shows good sensitivity and selectivity with the ability to detect the gas in the mixture with air provided that the concentration is ≥ 20% where the voltage breakdown will be close to the pure gas.

Cathode-less gridded ion thrusters for small satellites

NASA Astrophysics Data System (ADS)

Aanesland, Ane

2016-10-01

Electric space propulsion is now a mature technology for commercial satellites and space missions that requires thrust in the order of hundreds of mN, and with available electric power in the order of kW. Developing electric propulsion for SmallSats (1 to 500 kg satellites) are challenging due to the small space and limited available electric power (in the worst case close to 10 W). One of the challenges in downscaling ion and Hall thrusters is the need to neutralize the positive ion beam to prevent beam stalling. This neutralization is achieved by feeding electrons into the downstream space. In most cases hollow cathodes are used for this purpose, but they are fragile and difficult to implement, and in particular for small systems they are difficult to downscale, both in size and electron current. We describe here a new alternative ion thruster that can provide thrust and specific impulse suitable for mission control of satellites as small as 3 kg. The originality of our thruster lies in the acceleration principles and propellant handling. Continuous ion acceleration is achieved by biasing a set of grids with Radio Frequency voltages (RF) via a blocking capacitor. Due to the different mobility of ions and electrons, the blocking capacitor charges up and rectifies the RF voltage. Thus, the ions are accelerated by the self-bias DC voltage. Moreover, due to the RF oscillations, the electrons escape the thruster across the grids during brief instants in the RF period ensuring a full space charge neutralization of the positive ion beam. Due to the RF nature of this system, the space charge limited current increases by almost a factor of 2 compared to classical DC biased grids, which translates into a specific thrust two times higher than for a similar DC system. This new thruster is called Neptune and operates with only one RF power supply for plasma generation, ion acceleration and electron neutralization. We will present the downscaling of this thruster to a 3cm diameter unit well adapted for a CubeSat or SmallSat mission. This work was supported by Agence Nationale de la Recherche under contract ANR-11-IDEX-0004-02 (Plas@Par) and by SATT Paris-Saclay.

Ion acceleration in a helicon source due to the self-bias effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiebold, Matt; Sung, Yung-Ta; Scharer, John E.

2012-05-15

Time-averaged plasma potential differences up to 165 V over several hundred Debye lengths are observed in low pressure (p{sub n} < 1 mTorr) expanding argon plasmas in the Madison Helicon eXperiment (MadHeX). The potential gradient leads to ion acceleration greater than that predicted by ambipolar expansion, exceeding E{sub i} Almost-Equal-To 7 kT{sub e} in some cases. RF power up to 500 W at 13.56 MHz is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field, adjustable up to 1 kG. A retarding potential analyzer (RPA) measures the ion energy distribution function (IEDF) and a sweptmore » emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in density as RF power is increased. In the capacitive (E) mode, large fluctuations of the plasma potential (V{sub p-p} Greater-Than-Or-Equivalent-To 140V, V{sub p-p}/V{sub p} Almost-Equal-To 150%) exist at the RF frequency and its harmonics. The more mobile electrons can easily respond to RF-timescale gradients in the plasma potential whereas the inertially constrained ions cannot, leading to an initial flux imbalance and formation of a self-bias voltage between the source and expansion chambers. In the capacitive mode, the ion acceleration is not well described by an ambipolar relation, while in the inductive and helicon modes the ion acceleration more closely follows an ambipolar relation. The scaling of the potential gradient with the argon flow rate and RF power are investigated, with the largest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees with that predicted for RF self-bias at a wall. Rapid fluctuations in the plasma potential result in a time-dependent axial electron flux that acts to 'neutralize' the accelerated ion population, resulting in a zero net time-averaged current through the acceleration region when an insulating upstream boundary condition is enforced. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate.« less

Improvement in the statistical operation of a Blumlein pulse forming line in bipolar pulse mode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pushkarev, A. I., E-mail: aipush@mail.ru; Isakova, Y. I.; Khaylov, I. P.

The paper presents the results of studies on shot-to-shot performance of a water Blumlein pulse forming line of 1–1.2 kJ of stored energy. The experiments were carried using the TEMP-4M pulsed ion beam accelerator during its operation in both unipolar pulse mode (150 ns, 250–300 kV) and bipolar-pulse mode with the first negative (300–600 ns, 100–150 kV) followed by a second positive (120 ns, 250–300 kV) pulse. The analysis was carried out for two cases when the Blumlein was terminated with a resistive load and with a self-magnetically insulated ion diode. It was found that in bipolar pulse mode themore » shot-to-shot variation in breakdown voltage of a preliminary spark gap is small, the standard deviation (1σ) does not exceed 2%. At the same time, the shot-to-shot variation in the breakdown voltage of the main spark gap in both bipolar-pulse and unipolar pulse mode is 3–4 times higher than that for the preliminary spark gap. To improve the statistical performance of the main spark gap we changed the regime of its operation from a self-triggered mode to an externally triggered mode. In the new arrangement the first voltage pulse at the output of Blumlein was used to trigger the main spark gap. The new trigatron-type regime of the main spark gap operation showed a good stability of breakdown voltage and thus allowed to stabilize the duration of the first pulse. The standard deviation of the breakdown voltage and duration of the first pulse did not exceed 2% for a set of 50 pulses. The externally triggered mode of the main gap operation also allowed for a decrease in the charging voltage of the Blumlein to a 0.9–0.95 of self-breakdown voltage of the main spark gap while the energy stored in Marx generator was decreased from 4 kJ to 2.5 kJ. At the same time the energy stored in Blumlein remained the same.« less

High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

NASA Technical Reports Server (NTRS)

Nussberger, A. A.; Woodcock, G. R.

1980-01-01

SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

SIDON: A simulator of radio-frequency networks. Application to WEST ICRF launchers

NASA Astrophysics Data System (ADS)

Helou, Walid; Dumortier, Pierre; Durodié, Frédéric; Goniche, Marc; Hillairet, Julien; Mollard, Patrick; Berger-By, Gilles; Bernard, Jean-Michel; Colas, Laurent; Lombard, Gilles; Maggiora, Riccardo; Magne, Roland; Milanesio, Daniele; Moreau, Didier

2015-12-01

SIDON (SImulator of raDiO-frequency Networks) is an in-house developed Radio-Frequency (RF) network solver that has been implemented to cross-validate the design of WEST ICRF launchers and simulate their impedance matching algorithm while considering all mutual couplings and asymmetries. In this paper, the authors illustrate the theory of SIDON as well as results of its calculations. The authors have built time-varying plasma scenarios (a sequence of launchers front-faces L-mode and H-mode Z-matrices), where at each time step (1 millisecond here), SIDON solves the RF network. At the same time, when activated, the impedance matching algorithm controls the matching elements (vacuum capacitors) and thus their corresponding S-matrices. Typically a 1-second pulse requires around 10 seconds of computational time on a desktop computer. These tasks can be hardly handled by commercial RF software. This innovative work allows identifying strategies for the launchers future operation while insuring the limitations on the currents, voltages and electric fields, matching and Load-Resilience, as well as the required straps voltage amplitude/phase balance. In this paper, a particular attention is paid to the simulation of the launchers behavior when arcs appear at several locations of their circuits using SIDON calculator. This latter work shall confirm or identify strategies for the arc detection using various RF electrical signals. One shall note that the use of such solvers in not limited to ICRF launchers simulations but can be employed, in principle, to any linear or linearized RF problem.

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE PAGES

Kohno, H.; Myra, J. R.

2017-07-24

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

A finite element procedure for radio-frequency sheath–plasma interactions based on a sheath impedance model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohno, H.; Myra, J. R.

A finite element code that solves self-consistent radio-frequency (RF) sheath-plasma interaction problems is improved by incorporating a generalized sheath boundary condition in the macroscopic solution scheme. This sheath boundary condition makes use of a complex sheath impedance including both the sheath capacitance and resistance, which enables evaluation of not only the RF voltage across the sheath but also the power dissipation in the sheath. The newly developed finite element procedure is applied to cases where the background magnetic field is perpendicular to the sheath surface in one- and two-dimensional domains filled by uniform low- and high-density plasmas. The numerical resultsmore » are compared with those obtained by employing the previous capacitive sheath model at a typical frequency for ion cyclotron heating used in fusion experiments. It is shown that for sheaths on the order of 100 V in a high-density plasma, localized RF power deposition can reach a level which causes material damage. It is also shown that the sheath-plasma wave resonances predicted by the capacitive sheath model do not occur when parameters are such that the generalized sheath impedance model substantially modifies the capacitive character of the sheath. Here, possible explanations for the difference in the maximum RF sheath voltage depending on the plasma density are also discussed.« less

Using dust as probes to determine sheath extent and structure

NASA Astrophysics Data System (ADS)

Douglass, Angela; Land, V.; Qiao, K.; Matthews, L.; Hyde, T.

2016-08-01

Two in situ experimental methods are presented in which dust particles are used to determine the extent of the sheath and gain information about the time-averaged electric force profile within a radio frequency (RF) plasma sheath. These methods are advantageous because they are not only simple and quick to carry out, but they also can be performed using standard dusty plasma experimental equipment. In the first method, dust particles are tracked as they fall through the plasma towards the lower electrode. These trajectories are then used to determine the electric force on the particle as a function of height as well as the extent of the sheath. In the second method, dust particle levitation height is measured across a wide range of RF voltages. Similarities were observed between the two experiments, but in order to understand the underlying physics behind these observations, the same conditions were replicated using a self-consistent fluid model. Through comparison of the fluid model and experimental results, it is shown that the particles exhibiting a levitation height that is independent of RF voltage indicate the sheath edge - the boundary between the quasineutral bulk plasma and the sheath. Therefore, both of these simple and inexpensive, yet effective, methods can be applied across a wide range of experimental parameters in any ground-based RF plasma chamber to gain useful information regarding the sheath, which is needed for interpretation of dusty plasma experiments.

Static air-gap eccentricity fault diagnosis using rotor slot harmonics in line neutral voltage of three-phase squirrel cage induction motor

NASA Astrophysics Data System (ADS)

Oumaamar, Mohamed El Kamel; Maouche, Yassine; Boucherma, Mohamed; Khezzar, Abdelmalek

2017-02-01

The mixed eccentricity fault detection in a squirrel cage induction motor has been thoroughly investigated. However, a few papers have been related to pure static eccentricity fault and the authors focused on the RSH harmonics presented in stator current. The main objective of this paper is to present an alternative method based on the analysis of line neutral voltage taking place between the supply and the stator neutrals in order to detect air-gap static eccentricity, and to highlight the classification of all RSH harmonics in line neutral voltage. The model of squirrel cage induction machine relies on the rotor geometry and winding layout. Such developed model is used to analyze the impact of the pure static air-gap eccentricity by predicting the related frequencies in the line neutral voltage spectrum. The results show that the line neutral voltage spectrum are more sensitive to the air-gap static eccentricity fault compared to stator current one. The theoretical analysis and simulated results are confirmed by experiments.

An EEG (electroencephalogram) recording system with carbon wire electrodes for simultaneous EEG-fMRI (functional magnetic resonance imaging) recording

PubMed Central

Negishi, Michiro; Abildgaard, Mark; Laufer, Ilan; Nixon, Terry; Constable, Robert Todd

2008-01-01

Simultaneous EEG-fMRI (Electroencephalography-functional Magnetic Resonance Imaging) recording provides a means for acquiring high temporal resolution electrophysiological data and high spatial resolution metabolic data of the brain in the same experimental runs. Carbon wire electrodes (not metallic EEG electrodes with carbon wire leads) are suitable for simultaneous EEG-fMRI recording, because they cause less RF (radio-frequency) heating and susceptibility artifacts than metallic electrodes. These characteristics are especially desirable for recording the EEG in high field MRI scanners. Carbon wire electrodes are also comfortable to wear during long recording sessions. However, carbon electrodes have high electrode-electrolyte potentials compared to widely used Ag/AgCl (silver/silver-chloride) electrodes, which may cause slow voltage drifts. This paper introduces a prototype EEG recording system with carbon wire electrodes and a circuit that suppresses the slow voltage drift. The system was tested for the voltage drift, RF heating, susceptibility artifact, and impedance, and was also evaluated in a simultaneous ERP (event-related potential)-fMRI experiment. PMID:18588913

Dual frequency diffuse dielectric barrier discharge in atmospheric-pressure air-like gas mixture for thin film deposition

NASA Astrophysics Data System (ADS)

Liu, Yaoge; Starostin, Serguei; Welzel, Stefan; van de Sanden, M. C. M.; de Vries, Hindrik; Fom Institute-Differ Team; Eindhoven University Of Technology Team; Fujifilm Manufacturing Europe B. v. Team

2016-09-01

A dual frequency (DF) diffuse discharge was obtained in an atmospheric-pressure dielectric barrier discharge reactor in air-like gas mixtures. By adding a radio frequency (RF) voltage to a low frequency (LF) voltage, we aim to increase the plasma power density. In this study, the discussion is mainly focused on the discharge characteristics and the thin film deposition. According to the spatio-temporal emission, the discharge shows a glow-like structure with both LF and DF voltages. By fitting the spectral lines of the second positive system of N2, the gas temperature was estimated which does not obviously increase with the extra RF signal. Moreover, SiO2-like film was deposited from TEOS using the DF power supply. Thin film properties such as surface morphology, microstructure and stoichiometry were analyzed by AFM, FTIR and XPS, respectively. Because of the higher plasma power density, the DF power supply can be an efficient approach to improve the properties and to increase the throughput of the thin film deposition.

Simultaneous emissions of X-rays and microwaves from long laboratory sparks and downward lightning leaders

NASA Astrophysics Data System (ADS)

Montanya, J.; Oscar, V. D. V.; Tapia, F. F.

2017-12-01

Since the discovery of the Terrestrial Gamma-ray Flashes more than 20 years ago, investigations on high energy emissions from natural lightning and high voltage laboratory sparks gained significant interest. X-ray emissions from lightning as well from high voltage laboratory sparks have in common the role played by negative leaders/streamers. On the other hand, negative leaders are well known to produce much more VHF and microwave radiation than positive leaders. Moreover, in previous works, microwave emissions from lightning leaders have been attributed to Bremsstrahlung process. The object of this work is to investigate if X-rays and RF microwave emissions share the same origin. We present simultaneous measurements of X-rays and microwaves in high voltage sparks and natural lightning. The instrumentation consists on a NaI(Tl) and LaBr3 scintillation detectors and two different receivers. One is fix tuned at 2.4 GHz with a bandwidth of 5.5 MHz. The second can be tuned at any frequency up to 18 GHz with different selectable bandwidths of 10 MHz, 40 MHz and 100 MHz. In the laboratory, results have shown that all the sparks presented microwave radiation before the breakdown of the gap, either X-rays were detected or not. In the cases where X-rays were identified, microwave emissions peaked at the same time (in the microsecond scale). We found that the power amplitudes of the microwave emissions are related to the applied voltage to the gap. In the same configuration, those cases where X-rays were detected microwave emissions presented higher power levels. The results suggest that in some part of the discharge electrons are very fast accelerated allowing, in some cases, to reach enought energy to produce X-rays. In the field, we have found similar results. On 13th of June of 2015 a bipolar cloud-to-ground flash struck 200 m close to the Eagle Nest instrumented tower (Spanish Pyrenees, 2536 m ASL). The flash presented four strokes and, in all of them, microwave radiation was detected before the return stroke. The microwave emissions in the first positive leader had lower amplitude but presented longer duration whereas the emissions in the three negative downward dart leaders were more impulsive. X-rays were detected in two of the three negative downward dart leaders.

Characteristics of long-gap AC streamer discharges under low pressure conditions

NASA Astrophysics Data System (ADS)

Yang, Yaqi; Li, Weiguo; Xia, Yu; Yuan, Chuangye

2017-10-01

The generation and propagation of a streamer is a significant physical process of air gap discharge. Research on the mechanism of streamers under low-pressure conditions is helpful for understanding the process of long-gap discharge in a high-altitude area. This paper describes laboratory investigations of streamer discharge under alternating current (AC) voltage in a low pressure test platform for a 60 cm rod-plane gap at 30 kPa, and analyzes the characteristics of streamer generation and propagation. The results show that the partial streamer and breakdown streamer all occur in the positive half-cycle of AC voltage near the peak voltage at 30 kPa. The partial streamer could cause the distortion of current and voltage waveform, and it appears as the branching characteristic at the initial stage. With the extension of the streamer, the branching and tortuosity phenomena become gradually obvious, but the branching is suppressed when the streamer crosses the gap. The low-pressure condition has little influence on the tortuosity length and the tortuosity number of the streamer, but affect the diameter of streamer obviously.

Experimental test of whether electrostatically charged micro-organisms and their spores contribute to the onset of arcs across vacuum gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grisham, L. R.; Halle, A. von; Carpe, A. F.

2013-12-15

Recently it was proposed [L. R. Grisham et al. Phys. Plasmas 19, 023107 (2012)] that one of the initiators of vacuum voltage breakdown between conducting electrodes might be micro-organisms and their spores, previously deposited during exposure to air, which then become electrostatically charged when an electric potential is applied across the vacuum gap. This note describes a simple experiment to compare the number of voltage-conditioning pulses required to reach the nominal maximum operating voltage across a gap between two metallic conductors in a vacuum, comparing cases in which biological cleaning was done just prior to pump-down with cases where thismore » was not done, with each case preceded by exposure to ambient air for three days. Based upon these results, it does not appear that air-deposited microbes and their spores constitute a major pathway for arc initiation, at least for exposure periods of a few days, and for vacuum gaps of a few millimeters, in the regime where voltage holding is usually observed to vary linearly with gap distance.« less

Pulsed source ion implantation apparatus and method

DOEpatents

Leung, K.N.

1996-09-24

A new pulsed plasma-immersion ion-implantation apparatus that implants ions in large irregularly shaped objects to controllable depth without overheating the target, minimizing voltage breakdown, and using a constant electrical bias applied to the target. Instead of pulsing the voltage applied to the target, the plasma source, for example a tungsten filament or a RF antenna, is pulsed. Both electrically conducting and insulating targets can be implanted. 16 figs.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

NASA Astrophysics Data System (ADS)

Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

2013-11-01

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

Virtual gap dielectric wall accelerator

DOEpatents

Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

2013-11-05

A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

A short report on voltage-to-frequency conversion for HISTRAP RF system tuning control loops

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hasanul Basher, A.M.

1991-09-01

One of the requirements of the HISTRAP RF accelerating system is that the frequency of the accelerating voltage for the cavity must keep in step with the change in the magnetic field. As the energy of the particle increases, the magnetic field is increased to keep the radius of the particle orbit constant. At the same time, the frequency of the electric field must be changed to insure that it is synchronized with the angular movement of the particle. So we need to generate the frequency of the accelerating voltage in relation to the magnetic field. The frequency generation canmore » be accomplished in two stages. The first stage of frequency generation consists of measuring the magnetic field in terms of voltage which is already developed. The second stage is to convert this voltage into frequency. Final frequency precision can be achieved by deriving a frequency-correcting signal from the beam position. This project is concerned with generating the frequency from the analog voltage. The speed of response required will place very stringent requirements on both hardware and software. Technology is available to carry out this task. A hardware configuration has been established and software has been developed. In the following section, we describe the implementation strategy, the hardware configuration, and the desired specifications. Next, we present the software developed, results obtained, along with capabilities and limitations of the system. Finally, we suggest alternate solutions to overcome some of the limitations toward meeting our goal. In the appendices, we include program listings.« less

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE PAGES

Myra, J. R.

2017-07-07

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myra, J. R.

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Electron series resonance in a magnetized 13.56 MHz symmetric capacitive coupled discharge

NASA Astrophysics Data System (ADS)

Joshi, J. K.; Binwal, S.; Karkari, S. K.; Kumar, Sunil

2018-03-01

A 13.56 MHz capacitive coupled radio-frequency (RF) argon discharge under transverse magnetic field has been investigated. The discharge is operated in a push-pull mode using a 1:1 isolation transformer with its centre tap grounded to a RF generator. The power delivered to the plasma has been calculated from phase-calibrated RF current/voltage waveforms measured on the secondary side of the isolation transformer. An equivalent electrical circuit of the discharge has been described to determine the net plasma impedance. It is found that in the presence of magnetic field, the discharge impedance exhibits a series resonance as the RF power level is increased gradually. However, in the un-magnetized case, the discharge remains entirely capacitive. A qualitative discussion has been given to explain the role of external magnetic field in achieving the series resonance.

The effect of electrode temperature on the sparking voltage of short spark gaps

NASA Technical Reports Server (NTRS)

Silsbee, F B

1924-01-01

This report presents the results of an investigation to determine what effect the temperature of spark plug electrodes might have on the voltage at which a spark occurred. A spark gap was set up so that one electrode could be heated to temperatures up to 700 degrees C., while the other electrode and the air in the gap were maintained at room temperature. The sparking voltages were measured both with direct voltage and with voltage impulse from ignition coil. It was found that the sparking voltage of the gap decreased materially with increase of temperature. This change was more marked when the hot electrode was of negative polarity. The phenomena observed can be explained by the ionic theory of gaseous conduction, and serve to account for certain hitherto unexplained actions in the operation of internal combustion engines. These results indicate that the ignition spark will pass more readily when the spark-plug design is such as to make the electrodes run hot. This possible gain is, however, very closely limited by the danger of producing preignition. These experiments also show that sparking is somewhat easier when the hot electrode (which is almost always the central electrode) is negative than when the polarity is reversed.

Diplexer switch

NASA Technical Reports Server (NTRS)

Grauling, C. H., Jr.; Parker, T. W.

1977-01-01

Switch achieves high isolation and continuous input/output matching by using resonant coupling structure of diplexer. Additionally, dc bias network used to control switch is decoupled from RF input and output lines. Voltage transients in external circuits are thus minimized.

Evaluation of a microwave high-power reception-conversion array for wireless power transmission

NASA Technical Reports Server (NTRS)

Dickinson, R. M.

1975-01-01

Initial performance tests of a 24-sq m area array of rectenna elements are presented. The array is used as the receiving portion of a wireless microwave power transmission engineering verification test system. The transmitting antenna was located at a range of 1.54 km. Output dc voltage and power, input RF power, efficiency, and operating temperatures were obtained for a variety of dc load and RF incident power levels at 2388 MHz. Incident peak RF intensities of up to 170 mW/sq cm yielded up to 30.4 kW of dc output power. The highest derived collection-conversion efficiency of the array was greater than 80 percent.

Pulsed laser illumination of photovoltaic cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland A.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic receivers to provide remote power. Both the radio-frequency (RF) and induction FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL format.

Pulsed laser illumination of photovoltaic cells

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Lowe, Roland A.; Jenkins, Phillip P.; Landis, Geoffrey A.

1994-01-01

In future space missions, free electron lasers (FEL) may be used to illuminate photovoltaic array receivers to provide remote power. Both the radio-frequency (RF) and induction FEL provide FEL produce pulsed rather than continuous output. In this work we investigate cell response to pulsed laser light which simulates the RF FEL format. The results indicate that if the pulse repetition is high, cell efficiencies are only slightly reduced compared to constant illumination at the same wavelength. The frequency response of the cells is weak, with both voltage and current outputs essentially dc in nature. Comparison with previous experiments indicates that the RF FEL pulse format yields more efficient photovoltaic conversion than does an induction FEL pulse format.

Generation of X-rays and neutrons with a RF-discharge

NASA Technical Reports Server (NTRS)

Schneider, R. T.

1982-01-01

An experimental study concerning disk shaped plasma structures was performed. Such disk-shaped structures can be obtained using an rf discharge in hydrogen. The applied frequency was 1-2 Mhz. In case of operation in deuterium it was found that the discharge emits neutrons and X-rays, although the applied voltage is only 2 kV. This phenomenon was explained by assuming formation of plasma cavitons which are surrounded by high electric fields. The condition for formation of these cavitons is that the applied rf frequency is equal to the plasma frequency. The ions trapped in these resonance structures acquire sufficient energy that they can undergo fusion reactions with the ions in the surrounding gas.

Zn doping induced conductivity transformation in NiO films for realization of p-n homo junction diode

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Tandon, R. P.; Gupta, Vinay

2017-06-01

Mixed transition metal oxide, zinc doped NiO, Z n x N i 1 - x O (x = 0, 0.01, 0.02, 0.05, and 0.10), thin films have been fabricated by the RF magnetron sputtering technique in an oxygen deficit ambience at a growth temperature of 400 °C. The present report highlights the effect of Zn doping in NiO thin films on its structural, optical, and electrical properties. Optical transmission enhancement and band gap engineering in a-axis oriented NiO films have been demonstrated via Zn substitution. Hall effect measurements of the prepared samples revealed a transition from p-type to n-type conductivity in NiO at 2% Zn doping. A NiO based transparent p-n homojunction diode has been fabricated successfully, and the conduction mechanism dominating the diode properties is reported in detail. Current-voltage (I-V) characteristics of the homojunction diode are found to obey the Space Charge Limited Conduction mechanism with non-ideal square law behaviour.

Characteristics of radio-frequency atmospheric pressure dielectric-barrier discharge with dielectric electrodes

NASA Astrophysics Data System (ADS)

Hussain, S.; Qazi, H. I. A.; Badar, M. A.

2014-03-01

An experimental investigation to characterize the properties and highlight the benefits of atmospheric pressure radio-frequency dielectric-barrier discharge (rf DBD) with dielectric electrodes fabricated by anodizing aluminium substrate is presented. The current-voltage characteristics and millisecond images are used to distinguish the α and γ modes. This atmospheric rf DBD is observed to retain the discharge volume without constriction in γ mode. Optical emission spectroscopy demonstrates that the large discharge current leads to more abundant reactive species in this plasma source.

The Role of Adaptive Photorefractive Power Limiting on Acousto-Optic Radio Frequency (RF) Signal Excision

DTIC Science & Technology

2001-12-01

using TeO2 , A-O cell, slow acoustic wave). Beam deflection is a continuous function of the input voltage power spectrum; however, the spot width...than for isotropic crystals. Thus, anisotropic, A-O materials, such as TeO2 , have advantages for high RF bandwidth; slow acoustic speeds give better...112 Unfortunately, signal resolution worsened because the new TeO2 crystal was designed to operate in the longitudinal acoustic mode, ua = 5.5 Km

System integration of RF based negative ion experimental facility at IPR

NASA Astrophysics Data System (ADS)

Bansal, G.; Bandyopadhyay, M.; Singh, M. J.; Gahlaut, A.; Soni, J.; Pandya, K.; Parmar, K. G.; Sonara, J.; Chakraborty, A.

2010-02-01

The setting up of RF based negative ion experimental facility shall witness the beginning of experiments on the negative ion source fusion applications in India. A 1 MHz RF generator shall launch 100 kW RF power into a single driver on the plasma source to produce a plasma of density ~5 × 1012 cm-3. The source can deliver a negative ion beam of ~10 A with a current density of ~30 mA/cm2 and accelerated to 35 kV through an electrostatic ion accelerator. The experimental system is similar to a RF based negative ion source, BATMAN, presently operating at IPP. The subsystems for source operation are designed and procured principally from indigenous resources, keeping the IPP configuration as a base line. The operation of negative ion source is supported by many subsystems e.g. vacuum pumping system with gate valves, cooling water system, gas feed system, cesium delivery system, RF generator, high voltage power supplies, data acquisition and control system, and different diagnostics. The first experiments of negative ion source are expected to start at IPR from the middle of 2009.

Integrated Inductors for RF Transmitters in CMOS/MEMS Smart Microsensor Systems

PubMed Central

Kim, Jong-Wan; Takao, Hidekuni; Sawada, Kazuaki; Ishida, Makoto

2007-01-01

This paper presents the integration of an inductor by complementary metal-oxide-semiconductor (CMOS) compatible processes for integrated smart microsensor systems that have been developed to monitor the motion and vital signs of humans in various environments. Integration of radio frequency transmitter (RF) technology with complementary metal-oxide-semiconductor/micro electro mechanical systems (CMOS/MEMS) microsensors is required to realize the wireless smart microsensors system. The essential RF components such as a voltage controlled RF-CMOS oscillator (VCO), spiral inductors for an LC resonator and an integrated antenna have been fabricated and evaluated experimentally. The fabricated RF transmitter and integrated antenna were packaged with subminiature series A (SMA) connectors, respectively. For the impedance (50 Ω) matching, a bonding wire type inductor was developed. In this paper, the design and fabrication of the bonding wire inductor for impedance matching is described. Integrated techniques for the RF transmitter by CMOS compatible processes have been successfully developed. After matching by inserting the bonding wire inductor between the on-chip integrated antenna and the VCO output, the measured emission power at distance of 5 m from RF transmitter was -37 dBm (0.2 μW).

The radio-frequency fluctuation effect on the floating harmonic method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaewon; Kim, Kyung-Hyun; Kim, Dong-Hwan

2016-08-15

The radio-frequency (RF) plasma diagnostics with an electrical probe facing a challenge, because the RF fluctuation oscillates the plasma potential and distorts the current-voltage (I-V) curve. As Langmuir probe is widely used in plasma diagnostics, many researchers have been studying the effect of RF fluctuation on probe and compensation methods. On the other hand, there have not been enough studies on the fluctuation effect on the floating harmonic method. Therefore, we investigated the impact of RF fluctuation on the floating harmonic method theoretically and experimentally. When the electrons are in ideal Maxwellian distribution, the floating potential is negatively shifted bymore » the RF fluctuation, but the fluctuation does not distort I-V curve around the floating potential. However, in practical plasmas, the I-V curve and their harmonic components are distorted. This RF fluctuation effect becomes more significant in a low density plasma with a high impedance sheath. The second harmonic current decreases with the RF fluctuation while the first harmonic current is merely affected. Therefore, the electron temperatures measured with the floating harmonic method under low density plasma with uncompensated probe are overestimated than the results obtained with the compensated probe.« less

Development of the beam extraction synchronization system at the Fermilab Booster

NASA Astrophysics Data System (ADS)

Seiya, K.; Chaurize, S.; Drennan, C. C.; Pellico, W.; Sullivan, T.; Triplett, A. K.; Waller, A. M.

2015-11-01

The new beam extraction synchronization control system called "Magnetic Cogging" was developed at the Fermilab Booster and it replaces a system called "RF Cogging" as part of the Proton Improvement Plan (PIP).[1] The flux throughput goal for the PIP is 2.2×1017 protons per hour, which is double the present flux. The flux increase will be accomplished by doubling the number of beam cycles which, in turn, will double the beam loss in the Booster accelerator if nothing else is done. The Booster accelerates beam from 400 MeV to 8 GeV and extracts it to the Main Injector (MI) or Recycler Ring (RR). Cogging controls the beam extraction gap position which is created early in the Booster cycle and synchronizes the gap to the rising edge of the Booster extraction kicker and the MI/RR injection kicker. The RF Cogging system controls the gap position by changing only the radial position of the beam thus limiting the beam aperture and creating beam loss due to beam scraping. The Magnetic Cogging system controls the gap position with the magnetic field of the dipole correctors while the radial position feedback keeps the beam on a central orbit. Also with Magnetic Cogging the gap creation can occur earlier in the Booster cycle when the removed particles are at a lower energy. Thus Magnetic Cogging reduces the deposited energy of the lost particles (beam energy loss) and results in less beam loss activation. Energy loss was reduced by 40% by moving the gap creation energy from 700 MeV to 400 MeV when the Booster Cogging system was switched from RF Cogging to Magnetic Cogging in March 2015.

Fabrication and characteristics of thin disc piezoelectric transformers based on piezoelectric buzzers with gap circles.

PubMed

Chang, Kuo-Tsai; Lee, Chun-Wei

2008-04-01

This paper investigates design, fabrication and test of thin disc piezoelectric transformers (PTs) based on piezoelectric buzzers with gap circles at different diameters of the gap circles. The performance test is focused on characteristics of voltage gains, including maximum voltage gains and maximum-gain frequencies, for each piezoelectric transformer under different load conditions. Both a piezoelectric buzzer and a gap circle on a silver electrode of the buzzer are needed to build any type of the PTs. Here, the gap circle is used to form a ring-shaped input electrode and a circle-shaped output electrode for each piezoelectric transformer. To do so, both structure and connection of a PT are first expressed. Then, operating principle of a PT and its related vibration mode observed by a carbon-power imaging technique are described. Moreover, an experimental setup for characterizing each piezoelectric transformer is constructed. Finally, effects of diameters of the gap circles on characteristics of voltage gains at different load resistances are discussed.

Foundations of DC plasma sources

NASA Astrophysics Data System (ADS)

Tomas Gudmundsson, Jon; Hecimovic, Ante

2017-12-01

A typical dc discharge is configured with the negative cathode at one end and a positive anode at the other end, separated by a gas filled gap, placed inside a long glass cylinder. A few hundred volts between the cathode and anode is required to maintain the discharge. The type of discharge that is formed between the two electrodes depends upon the pressure of the working gas, the nature of the working gas, the applied voltage and the geometry of the discharge. We discuss the current-voltage characteristics of the discharge as well as the distinct structure that develops in the glow discharge region. The dc glow discharge appears in the discharge current range from μA to mA at 0.5-300 Pa pressure. We discuss the various phenomena observed in the dc glow discharge, including the cathode region, the positive column, and striations. The dc glow discharge is maintained by the emission of secondary electrons from the cathode target due to the bombardment of ions. For decades, the dc glow discharge has been used as a sputter source. Then it is often operated as an obstructed abnormal glow discharge and the required applied voltage is in the range 2-5 kV. Typically, the cathode target (the material to be deposited) is connected to a negative voltage supply (dc or rf) and the substrate holder faces the target. The relatively high operating pressure, in the range from 2 to 4 Pa, high applied voltages, and the necessity to have a conductive target limit the application of dc glow discharge as a sputter source. In order to lower the discharge voltage and expand the operation pressure range, the lifetime of the electrons in target vicinity is increased through applying magnetic field, by adding permanent magnets behind the cathode target. This arrangement is coined the magnetron sputtering discharge. The various configurations of the magnetron sputtering discharge and its applications are described. Furthermore, the use of dc discharges for chemical analysis, the Penning discharge and the hollow cathode discharges and some of its applications are briefly discussed.

Review of ion energy and angular distributions in capacitively coupled RF plasma reactors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawamura, E.; Lieberman, M.A.; Birdsall, C.K.

1995-12-31

The authors present a historical review and discussion of previous works on ion energy and angular distributions (IED and IAD) arriving at the target in the collisionless regime. This regime is of great interest to experimentalists and modelers studying the new generation of high density sources in which the sheath is much thinner than in the conventional RIE systems. The purpose of the review is to asses what has been done so far, and to clarify some issues about sheaths in high density systems. Having determined the important parameters, the authors show some particle-in-cell simulation results of a dually excitedmore » capacitively coupled plasma in which the sheath ions roughly see the scaling as in high density sources. The results show that when {tau}{sub ion}/{tau}{sub rf} < 1, the oscillating voltage and width of the rf sheath significantly affect the IEDs, where {tau}{sub ion} is the ion transit-time and {tau}{sub rf} is rf period.« less

Thin film lithium niobate electro-optic modulator with terahertz operating bandwidth.

PubMed

Mercante, Andrew J; Shi, Shouyuan; Yao, Peng; Xie, Linli; Weikle, Robert M; Prather, Dennis W

2018-05-28

We present a thin film crystal ion sliced (CIS) LiNbO 3 phase modulator that demonstrates an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib waveguides are utilized for guiding a single transverse electric (TE) optical mode, and Au coplanar waveguides (CPWs) support the modulating radio frequency (RF) mode. Precise index matching between the co-propagating RF and optical modes is responsible for the device's broadband response, which is estimated to extend even beyond 500 GHz. Matching the velocities of these co-propagating RF and optical modes is realized by cladding the modulator's interaction region in a thin UV15 polymer layer, which increases the RF modal index. The fabricated modulator possesses a tightly confined optical mode, which lends itself to a strong interaction between the modulating RF field and the guided optical carrier; resulting in a measured DC half-wave voltage of 3.8 V·cm -1 . The design, fabrication, and characterization of our broadband modulator is presented in this work.

Manufacture of radio frequency micromachined switches with annealing.

PubMed

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of Radio Frequency Micromachined Switches with Annealing

PubMed Central

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. PMID:24445415

High stability buffered phase comparator

NASA Technical Reports Server (NTRS)

Adams, W. A.; Reinhardt, V. S. (Inventor)

1984-01-01

A low noise RF signal phase comparator comprised of two high stability driver buffer amplifiers driving a double balanced mixer which operate to generate a beat frequency between the two RF input signals coupled to the amplifiers from the RF sources is described. The beat frequency output from the mixer is applied to a low noise zero crossing detector which is the phase difference between the two RF inputs. Temperature stability is provided by mounting the amplifiers and mixer on a common circuit board with the active circuit elements located on one side of a circuit board and the passive circuit elements located on the opposite side. A common heat sink is located adjacent the circuit board. The active circuit elements are embedded into the bores of the heat sink which slows the effect of ambient temperature changes and reduces the temperature gradients between the active circuit elements, thus improving the cancellation of temperature effects. The two amplifiers include individual voltage regulators, which increases RF isolation.

False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation

NASA Astrophysics Data System (ADS)

Sawada, Takuya; Takata, Hidehiro; Nii, Koji; Nagata, Makoto

2013-04-01

Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

IBS and Potential Luminosity Improvement for RHIC Operation Below Transition Energy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fedotov,A.

There is a strong interest in low-energy RHIC operations in the single-beam total energy range of 2.5-25 GeV/nucleon [1-3]. Collisions in this energy range, much of which is below nominal RHIC injection energy, will help to answer one of the key questions in the field of QeD about the existence and location of a critical point on the QCD phase diagram [4]. There have been several short test runs during 2006-2008 RHIC operations to evaluate RHIC operational challenges at these low energies [5]. Beam lifetimes observed during the test runs were limited by machine nonlinearities. This performance limit can bemore » improved with sufficient machine tuning. The next luminosity limitation comes from transverse and longitudinal Intra-beam Scattering (IBS), and ultimately from the space-charge limit. Detailed discussion of limiting beam dynamics effects and possible luminosity improvement with electron cooling can be found in Refs. [6-8]. For low-energy RHIC operation, particle losses from the RF bucket are of particular concern since the longitudinal beam size is comparable to the existing RF bucket at low energies. However, operation below transition energy allows us to exploit an Intra-beam Scattering (IBS) feature that drives the transverse and longitudinal beam temperatures towards equilibrium by minimizing the longitudinal diffusion rate using a high RF voltage. Simulation studies were performed with the goal to understand whether one can use this feature of IBS to improve luminosity of RHIC collider at low-energies. This Note presents results of simulations which show that additional luminosity improvement for low-energy RHIC project may be possible with high RF voltage from a 56 MHz superconducting RF cavity that is presently under development for RHIC.« less

High-voltage pulse generator developed for wide-gap spark chambers

NASA Technical Reports Server (NTRS)

Keller, L. P.; Walschon, E. G.

1968-01-01

Low-inductance, high-capacitance Marx pulse generator provides for minimization of internal inductance and suppression of external electromagnetic radiation. The spark gaps of the generator are enclosed in a pressurized nitrogen atmosphere which allows the charging voltage to be varied by changing the nitrogen pressure.

Dipole Excitation With A Paul Ion Trap Mass Spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacAskill, J. A.; Madzunkov, S. M.; Chutjian, A.

Preliminary results are presented for the use of an auxiliary radiofrequency (rf) excitation voltage in combination with a high purity, high voltage rf generator to perform dipole excitation within a high precision Paul ion trap. These results show the effects of the excitation frequency over a continuous frequency range on the resultant mass spectra from the Paul trap with particular emphasis on ion ejection times, ion signal intensity, and peak shapes. Ion ejection times are found to decrease continuously with variations in dipole frequency about several resonant values and show remarkable symmetries. Signal intensities vary in a complex fashion withmore » numerous resonant features and are driven to zero at specific frequency values. Observed intensity variations depict dipole excitations that target ions of all masses as well as individual masses. Substantial increases in mass resolution are obtained with resolving powers for nitrogen increasing from 114 to 325.« less

FAST TRACK COMMUNICATION: Nanocrystalline silicon film growth morphology control through RF waveform tailoring

NASA Astrophysics Data System (ADS)

Johnson, Erik V.; Verbeke, Thomas; Vanel, Jean-Charles; Booth, Jean-Paul

2010-10-01

We demonstrate the application of RF waveform tailoring to generate an electrical asymmetry in a capacitively coupled plasma-enhanced chemical vapour deposition system, and its use to control the growth mode of hydrogenated amorphous and nanocrystalline silicon thin films deposited at low temperature (150 °C). A dramatic shift in the dc bias potential at the powered electrode is observed when simply inverting the voltage waveform from 'peaks' to 'troughs', indicating an asymmetric distribution of the sheath voltage. By enhancing or suppressing the ion bombardment energy at the substrate (situated on the grounded electrode), the growth of thin silicon films can be switched between amorphous and nanocrystalline modes, as observed using in situ spectroscopic ellipsometry. The effect is observed at pressures sufficiently low that the collisional reduction in average ion bombardment energy is not sufficient to allow nanocrystalline growth (<100 mTorr).

Influence of barrier on partial discharge activity by a conducting particle in liquid nitrogen under AC voltages adopting UHF technique

NASA Astrophysics Data System (ADS)

Sarathi, R.; Giridhar, A. V.; Sethupathi, K.

2011-02-01

The UHF signals are generated due to PD formed by particle movement in liquid nitrogen under AC voltages. The levitation voltage of a particle in liquid nitrogen measured through UHF technique and by conventional PD measurement technique is the same, confirming the sensitivity of UHF technique for identification of PD activity. The frequency content of UHF signal generated due to particle movement in liquid nitrogen, under AC voltages, lies in the range 0.5-1.5 GHz. The characteristics of UHF signal generated due to particle movement between the barrier and high voltage/ground electrode is much similar to the signal generated by particle movement in clean electrode gap. Pseudo resonance phenomena can occur in liquid nitrogen due to particle movement. It is also observed that the partial discharge magnitude, in general, be high when the particle moves between the barrier and high voltage electrode when compared to the barrier and the ground electrode. Percentage of clay in epoxy nanocomposites has not altered the levitation voltage of the particle in the electrode gap. Zero span analysis clearly indicates that pseudo resonance occurs when particle moves (in a short gap) between the barrier and high voltage/ground electrode.

Development of longitudinally excited CO2 laser

NASA Astrophysics Data System (ADS)

Masroon, N. S.; Tanaka, M.; Tei, M.; Uno, K.; Tsuyama, M.; Nakano, H.

2018-05-01

Simple, compact, and affordable discharged-pumped CO2 laser controlled by a fast high voltage solid state switch has been developed. In this study, longitudinal excitation scheme has been adapted for simple configuration. In the longitudinal excitation scheme, the discharge is produced along the direction of the laser axis, and the electrodes are well separated with a small discharge cross-section. Triggered spark gap switch is usually used to switch out the high voltage because of simple and low cost. However, the triggered spark gap operates in the arc mode and suffer from recovery problem causing a short life time and low efficiency for high repetition rate operation. As a result, there is now considerable interest in replacing triggered spark gap switch with solid state switches. Solid state switches have significant advantages compared to triggered spark gap switch which include longer service lifetime, low cost and stable high trigger pulse. We have developed simple and low cost fast high voltage solid state switch that consists of series connected-MOSFETs. It has been installed to the longitudinally excited CO2 laser to realize the gap switch less operation. Characteristics of laser oscillation by varying the discharge length, charging voltage, capacitance and gas pressure have been evaluated. Longer discharge length produce high power of laser oscillation. Optimum charging voltage and gas pressure were existed for longitudinally excited CO2 laser.

Design challenges of EO polymer based leaky waveguide deflector for 40 Gs/s all-optical analog-to-digital converters

NASA Astrophysics Data System (ADS)

Hadjloum, Massinissa; El Gibari, Mohammed; Li, Hongwu; Daryoush, Afshin S.

2016-08-01

Design challenges and performance optimization of an all-optical analog-to-digital converter (AOADC) is presented here. The paper addresses both microwave and optical design of a leaky waveguide optical deflector using electro-optic (E-O) polymer. The optical deflector converts magnitude variation of the applied RF voltage into variation of deflection angle out of a leaky waveguide optical beam using the linear E-O effect (Pockels effect) as part of the E-O polymer based optical waveguide. This variation of deflection angle as result of the applied RF signal is then quantized using optical windows followed by an array of high-speed photodetectors. We optimized the leakage coefficient of the leaky waveguide and its physical length to achieve the best trade-off between bandwidth and the deflected optical beam resolution, by improving the phase velocity matching between lightwave and microwave on one hand and using pre-emphasis technique to compensate for the RF signal attenuation on the other hand. In addition, for ease of access from both optical and RF perspective, a via-hole less broad bandwidth transition is designed between coplanar pads and coupled microstrip (CPW-CMS) driving electrodes. With the best reported E-O coefficient of 350 pm/V, the designed E-O deflector should allow an AOADC operating over 44 giga-samples-per-seconds with an estimated effective resolution of 6.5 bits on RF signals with Nyquist bandwidth of 22 GHz. The overall DC power consumption of all components used in this AOADC is of order of 4 W and is dominated by power consumption in the power amplifier to generate a 20 V RF voltage in 50 Ohm system. A higher sampling rate can be achieved at similar bits of resolution by interleaving a number of this elementary AOADC at the expense of a higher power consumption.

Comparison of the surface dielectric barrier discharge characteristics under different electrode gaps

NASA Astrophysics Data System (ADS)

Gao, Guoqiang; Dong, Lei; Peng, Kaisheng; Wei, Wenfu; Li, Chunmao; Wu, Guangning

2017-01-01

Currently, great interests are paid to the surface dielectric barrier discharge due to the diverse and interesting application. In this paper, the influences of the electrode gap on the discharge characteristics have been studied. Aspects of the electrical parameters, the optical emission, and the discharge induced gas flow were considered. The electrode gap varied from 0 mm to 21 mm, while the applied AC voltage was studied in the range of 17 kV-27 kV. Results indicate that with the increase of the electrode gap, the variation of discharge voltage exhibits an increasing trend, while the other parameters (i.e., the current, power, and induced flow velocity) increase first, and then decrease once the gap exceeded the critical value. Mechanisms of the electrode gap influencing these key parameters were discussed from the point of equivalent circuit. The experimental results reveal that an optimal discharge gap can be obtained, which is closely related to the applied voltage. Visualization of the induced flow with different electrode gaps was realized by the Schlieren diagnostic technique. Finally, the velocities of induced gas flow determined by the pitot tube were compared with the results of intensity-integral method, and good agreements were found.

New Developments on the PSR Instability

NASA Astrophysics Data System (ADS)

Macek, Robert

2000-04-01

A strong, fast, transverse instability has long been observed at the Los Alamos Proton Storage Ring (PSR) where it is a limiting factor on peak intensity. Most of the characteristics and experimental data are consistent with a two-stream instability (e-p) arising from coupled oscillations of the proton beam and an electron cloud. In past operations, where the average intensity was limited by beam losses, the instability was controlled by sufficient rf voltage in the ring. The need for higher beam intensity has motivated new work to better understand and control the instability. Results will be presented from studies of the production and characteristics of the electron cloud at various locations in the ring for both stable and unstable beams and suppression of electron cloud generation by TiN coatings. Studies of additional or alternate controls include application of dual harmonic rf, damping of the instability by higher order multipoles, damping by X,Y coupling from skew quadrupoles and the use of inductive inserts to compensate longitudinal space charge forces. Use of a skew quadrupole, heated inductive inserts and higher rf voltage from a refurbished rf buncher has enabled the PSR to accumulate stable beam intensity up to 9.7 micro-Coulombs (6 E13 protons) per macropulse, a significant increase (60over the previous maximum of 6 micro-Coulombs (3.7 E13 protons). However, slow losses were rather high and must be reduced for routine operation at repetition rates of 20 Hz or higher.

Design of the central region for axial injection in the VINCY cyclotron

NASA Astrophysics Data System (ADS)

Milinković, Ljiljana; Toprek, Dragan

1996-02-01

This paper describes the design of the central region for h = 1, h = 2 and h = 4 modes of acceleration in the VINCY cyclotron. The result which is worth reported in that the central region is unique and compatible with the three above mentioned harmonic modes of operation. Only one spiral type inflector will be used. The central region is designed to operate with two external ion sources: (a) an ECR ion source with the maximum extraction voltage of 25 kV for heavy ions, and (b) a multicusp ion source with the maximum extraction voltage of 30 kV for H - and D - ions. Heavy ions will be accelerated by the second and fourth harmonics, D - ions by the second harmonic and H - ions by the first harmonic of the RF field. The central region is equipped with an axial injection system. The electric field distribution in the inflector and in the four acceleration gaps has been numerically calculated from an electric potential map produced by the program RELAX3D. The geometry of the central region has been tested with the computations of orbits carried out by means of the computer code CYCLONE. The optical properties of the spiral inflector and the central region were studied by using the programs CASINO and CYCLONE respectively. We have also made an effort to minimize the inflector fringe field using the RELAX3D program.

Nonlinear standing wave excitation by series resonance-enhanced harmonics in low pressure capacitive discharges

NASA Astrophysics Data System (ADS)

Lieberman, M. A.; Lichtenberg, A. J.; Kawamura, Emi; Marakhtanov, A. M.

2015-09-01

It is well known that standing waves having radially center-high rf voltage profiles exist in high frequency capacitive discharges. It is also known that in radially uniform discharges, the capacitive sheath nonlinearities excite strong nonlinear series resonance harmonics that enhance the electron power deposition. In this work, we consider the coupling of the series resonance-enhanced harmonics to the standing waves. A one-dimensional, asymmetric radial transmission line model is developed incorporating the wave and nonlinear sheath physics and a self-consistent dc potential. The resulting coupled pde equation set is solved numerically to determine the discharge voltages and currents. A 10 mT argon base case is chosen with plasma density 2 ×1016 m-3, gap width 2 cm and conducting electrode radius 15 cm, driven by a high frequency 500 V source with source resistance 0.5 ohms. We find that nearby resonances lead to an enhanced ratio of 4.5 of the electron power per unit area on axis, compared to the average. The radial dependence of electron power with frequency shows significant variations, with the central enhancement and sharpness of the spatial resonances depending in a complicated way on the harmonic structure. Work supported by DOE Fusion Energy Science Contract DE-SC000193 and by a gift from the Lam Research Corporation.

Ferroelectric Based High Power Components for L-Band Accelerator Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kanareykin, Alex; Jing, Chunguang; Kostin, Roman

2018-01-16

We are developing a new electronic device to control the power in particle accelerators. The key technology is a new nanostructured material developed by Euclid that changes its properties with an applied electric field. Both superconducting and conventional accelerating structures require fast electronic control of the input rf power. A fast controllable phase shifter would allow for example the control of the rf power delivered to multiple accelerating cavities from a single power amplifier. Nonlinear ferroelectric microwave components can control the tuning or the input power coupling for rf cavities. Applying a bias voltage across a nonlinear ferroelectric changes itsmore » permittivity. This effect can be used to cause a phase change of a propagating rf signal or change the resonant frequency of a cavity. The key is the development of a low loss highly tunable ferroelectric material.« less

Langmuir probe measurements in the intense RF field of a helicon discharge

NASA Astrophysics Data System (ADS)

Chen, Francis F.

2012-10-01

Helicon discharges have extensively been studied for over 25 years both because of their intriguing physics and because of their utility in producing high plasma densities for industrial applications. Almost all measurements so far have been made away from the antenna region in the plasma ejected into a chamber where there may be a strong magnetic field (B-field) but where the radiofrequency (RF) field is much weaker than under the antenna. Inside the source region, the RF field distorts the current-voltage (I-V) characteristic of the probe unless it is specially designed with strong RF compensation. For this purpose, a thin probe was designed and used to show the effect of inadequate compensation on electron temperature (Te) measurements. The subtraction of ion current from the I-V curve is essential; and, surprisingly, Langmuir's orbital motion limited theory for ion current can be used well beyond its intended regime.

Influence of the RF electrode cleanliness on plasma characteristics and dust-particle generation in methane dusty plasmas

NASA Astrophysics Data System (ADS)

Géraud-Grenier, I.; Desdions, W.; Faubert, F.; Mikikian, M.; Massereau-Guilbaud, V.

2018-01-01

The methane decomposition in a planar RF discharge (13.56 MHz) leads both to a dust-particle generation in the plasma bulk and to a coating growth on the electrodes. Growing dust-particles fall onto the grounded electrode when they are too heavy. Thus, at the end of the experiment, the grounded electrode is covered by a coating and by fallen dust-particles. During the dust-particle growth, the negative DC self-bias voltage (VDC) increases because fewer electrons reach the RF electrode, leading to a more resistive plasma and to changes in the plasma chemical composition. In this paper, the cleanliness influence of the RF electrode on the dust-particle growth, on the plasma characteristics and composition is investigated. A cleanliness electrode is an electrode without coating and dust-particles on its surface at the beginning of the experiment.

Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

DTIC Science & Technology

1995-07-01

current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

Bunch beam cooling

NASA Astrophysics Data System (ADS)

Bryzgunov, M. I.; Kamerdzhiev, V.; Li, J.; Mao, L. J.; Parkhomchuk, V. V.; Reva, V. B.; Yang, X. D.; Zhao, H.

2017-07-01

Electron cooling is used for damping both transverse and longitudinal oscillations of heavy particle. The cooling of bunch ion beam (with RF voltage on) is important part of experiments with inner target, ion collision system, stacking and RF manipulation. The short length of an ion bunch increases the peak luminosity, gives a start-time point for using of the time-of-flight methods and obtains a short extraction beam pulse. This article describes the review of last experiments with electron cooling carried out on the CSRm, CSRe (China) and COSY (Germany) storage rings. The accumulated experience may be used for the project of electron cooler on 2.5 MeV (NICA) and 0.5 MeV HIAF for obtaining high luminosity, depressing beam-beam effects and RF manipulation.

Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu; Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil; Sun, Nian X.

2013-11-21

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstratedmore » in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.« less

Low-frequency RF Coupling To Unconventional (Fat Unbalanced) Dipoles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ong, M M; Brown, C G; Perkins, M P

2010-12-07

The report explains radio frequency (RF) coupling to unconventional dipole antennas. Normal dipoles have thin equal length arms that operate at maximum efficiency around resonance frequencies. In some applications like high-explosive (HE) safety analysis, structures similar to dipoles with ''fat'' unequal length arms must be evaluated for indirect-lightning effects. An example is shown where a metal drum-shaped container with HE forms one arm and the detonator cable acts as the other. Even if the HE is in a facility converted into a ''Faraday cage'', a lightning strike to the facility could still produce electric fields inside. The detonator cable concentratesmore » the electric field and carries the energy into the detonator, potentially creating a hazard. This electromagnetic (EM) field coupling of lightning energy is the indirect effect of a lightning strike. In practice, ''Faraday cages'' are formed by the rebar of the concrete facilities. The individual rebar rods in the roof, walls and floor are normally electrically connected because of the construction technique of using metal wire to tie the pieces together. There are two additional requirements for a good cage. (1) The roof-wall joint and the wall-floor joint must be electrically attached. (2) All metallic penetrations into the facility must also be electrically connected to the rebar. In this report, it is assumed that these conditions have been met, and there is no arcing in the facility structure. Many types of detonators have metal ''cups'' that contain the explosives and thin electrical initiating wires, called bridge wires mounted between two pins. The pins are connected to the detonator cable. The area of concern is between the pins supporting the bridge wire and the metal cup forming the outside of the detonator. Detonator cables usually have two wires, and in this example, both wires generated the same voltage at the detonator bridge wire. This is called the common-mode voltage. The explosive component inside a detonator is relatively sensitive, and any electrical arc is a concern. In a safety analysis, the pin-to-cup voltage, i.e., detonator voltage, must be calculated to decide if an arc will form. If the electric field is known, the voltage between any two points is simply the integral of the field along a line between the points. Eq. 1.1. For simplicity, it is assumed that the electric field and dipole elements are aligned. Calculating the induced detonator voltage is more complex because of the field concentration caused by metal components. If the detonator cup is not electrically connected to the metal HE container, the portion of the voltage generated by the dipole at the detonator will divide between the container-to-cup and cup-to-pin gaps. The gap voltages are determined by their capacitances. As a simplification, it will be assumed the cup is electrically attached, short circuited, to the HE container. The electrical field in the pin-to-cup area is determined by the field near the dipole, the length of the dipole, the shape of the arms, and the orientation of the arms. Given the characteristics of a lightning strike and the inductance of the facility, the electric fields in the ''Faraday cage'' can be calculated. The important parameters for determining the voltage in an empty facility are the inductance of the rebars and the rate of change of the current, Eq. 1.3. The internal electric fields are directly related to the facility voltages, however, the electric fields in the pin-to-cup space is much higher than the facility fields because the antenna will concentrate the fields covered by the arms. Because the lightning current rise-time is different for every strike, the maximum electric field and the induced detonator voltage should be described by probability distributions. For pedantic purposes, the peak field in the simulations will be simply set to 1 V/m. Lightning induced detonator voltages can be calculated by scaling up with the facility fields. Any metal object around the explosives, such as a work stand, will also distort the electric fields. A computer simulation of the electric fields in a facility with a work stand and HE container is shown. In this configuration, the work stand is grounded, and the intensity of field around the HE (denoted in dark blue) is reduced relative to the rest of the work bay (denoted lighter blue). The area above work stand posts has much higher fields indicated by red. The fields on top of the container are also affected. Without an understanding of how the electric fields are distributed near the detonator cable and container, it is not possible to calculate the induced detonator voltage. The average lightning current has rise- and fall-times of 3 us and 50 us respectively, and this translates to a wavelength that is long when compared with the length of the HE container or detonator cable.« less

Radiofrequency artefacts in echoplanar imaging induced by two 1.5 T MR scanners in close proximity.

PubMed

Li, X; Cui, J; Christopasak, S P; Kumar, A; Peng, Z-G

2014-06-01

The purpose of this study was to assess radio frequency (RF) artefacts in echoplanar imaging (EPI) induced by two 1.5 T MR scanners in close proximity and to find an effective method to correct them. Based on the intact shielding of rooms, experiments were performed by two MR scanners with similar centre frequencies. Phantom A (PA) was scanned in one scanner by EPI at different bandwidths (BWs). Simultaneously, phantom B was scanned in a fixed sequence for scanning with the other scanner. RF artefact gaps of PA, scanning time and the image signal-noise ratio (SNR) were measured and recorded. Statistical analysis was performed with the repeated-measures analysis of variance test. Based on findings obtained from PA, three healthy volunteers were studied at a conventional BW and a lower BW to observe the artefact variance. EPI RF artefacts were symmetrically situated in both sides of the image following the phase-encoding direction. The gap size of the artefact became larger and the SNR was significantly improved with a narrower BW. RF artefacts with a lower BW in volunteers presented the same characteristic as PA. For EPI RF artefacts produced by two 1.5 T MR scanners with approximately similar centre frequencies, we can reduce BWs in a suitable range to minimize the effect on MRI. MR scanners with the same field strength installed in the same vicinity might produce RF artefacts in the sequence at larger BWs. Reducing BWs properly is effective to control the position of artefacts and improve the image quality.

Interaction of ICRF Fields with the Plasma Boundary in AUG and JET and Guidelines for Antenna Optimization

NASA Astrophysics Data System (ADS)

Bobkov, V.; Bilato, R.; Braun, F.; Colas, L.; Dux, R.; Van Eester, D.; Giannone, L.; Goniche, M.; Herrmann, A.; Jacquet, P.; Kallenbach, A.; Krivska, A.; Lerche, E.; Mayoral, M.-L.; Milanesio, D.; Monakhov, I.; Müller, H. W.; Neu, R.; Noterdaeme, J.-M.; Pütterich, Th.; Rohde, V.

2009-11-01

W sputtering during ICRF on ASDEX Upgrade (AUG) and temperature rise on JET A2 antenna septa are considered in connection with plasma conditions at the antenna plasma facing components and E‖ near-fields. Large antenna-plasma clearance, high gas puff and low light impurity content are favorable to reduce W sputtering in AUG. The spatial distribution of spectroscopically measured effective W sputtering yields clearly points to the existence of strong E‖ fields at the antenna box ("feeder fields") which dominate over the fields in front of the antenna straps. The picture of E‖ fields, obtained by HFSS code, corroborates the dominant role of E‖ at the antenna box on the formation of sheath-driving RF voltages for AUG. Large antenna-plasma clearance and low gas puff are favorable to reduce septum temperature of JET A2 antennas. Assuming a linear relation between the septum temperature and the sheath driving RF voltage calculated by HFSS, the changes of the temperature with dipole phasing (00ππ, 0ππ0 or 0π0π) are well described by the related changes of the RF voltages. Similarly to the AUG antenna, the strongest E‖ are found at the limiters of the JET A2 antenna for all used dipole phasings and at the septum for the phasings different from 0π0π. A simple general rule can be used to minimize E‖ at the antenna: image currents can be allowed only at the surfaces which do not intersect magnetic field lines at large angles of incidence. Possible antenna modifications generally rely either on a reduction of the image currents, on their short-circuiting by introducing additional conducting surfaces or on imposing the E‖ = 0 boundary condition. On the example of AUG antenna, possible options to minimize the sheath driving voltages are presented.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Modular compact solid-state modulators for particle accelerators

NASA Astrophysics Data System (ADS)

Zavadtsev, A. A.; Zavadtsev, D. A.; Churanov, D. V.

2017-12-01

The building of the radio frequency (RF) particle accelerator needs high-voltage pulsed modulator as a power supply for klystron or magnetron to feed the RF accelerating system. The development of a number of solid-state modulators for use in linear accelerators has allowed to develop a series of modular IGBT based compact solid-state modulators with different parameters. This series covers a wide range of needs in accelerator technology to feed a wide range of loads from the low power magnetrons to powerful klystrons. Each modulator of the series is built on base of a number of unified solid-state modules connected to the pulse transformer, and covers a wide range of modulators: voltage up to 250 kV, a peak current up to 250 A, average power up to 100 kW and the pulse duration up to 20 μsec. The parameters of the block with an overall dimensions 880×540×250 mm are: voltage 12 kV, peak current 1600 A, pulse duration 20 μsec, average power 10 kW with air-cooling and 40 kW with liquidcooling. These parameters do not represent a physical limit, and modulators to parameters outside these ranges can be created on request.

60-MW test using the 30-MW klystrons for the KEKB project

NASA Astrophysics Data System (ADS)

Fukuda, S.; Michizono, S.; Nakao, K.; Saito, Y.; Anami, S.

1995-07-01

The B-Factory is a future plan, requiring an energy upgrade of the KEK linac from 2.5 GeV to 8.0 GeV (KEKB Project). This paper describes the recent development of an S-band high-power pulse klystron to be used as the PF-linac rf-source of the B-Factory. This tube is a modified version of the existing 30-MW tube, which produces 51 MW at a 310 kV beam voltage by optimizing the focusing magnetic field. In order to increase the reliability, the cathode diameter, the gun housing, and the insulation ceramic-seal were enlarged. This tube was redesigned so as to have the same characteristics as the test results of 30-MW tubes at a higher applied voltage without changing the rf interaction region. Four prototype tubes have been manufactured; final test results showed that these new tubes produce an output power of more than 50 MW at 310 kV with an efficiency of 46%. Recently this tube has produced more than 60 MW at a 350 kV beam voltage for a demonstration test. A comparison between the FCI-code prediction and the test results is also given in this paper.

Eight electrode optical readout gap

DOEpatents

Boettcher, G.E.; Crain, R.W.

1984-01-01

A protective device for a plurality of electrical circuits includes a plurality of isolated electrodes forming a gap with a common electrode. An output signal, electrically isolated from the circuits being monitored, is obtained by a photosensor viewing the discharge gap through an optical window. Radioactive stabilization of discharge characteristics is provided for slowly changing voltages and carbon tipped dynamic starters provide desirable discharge characteristics for rapidly varying voltages. A hydrogen permeation barrier is provided on external surfaces of the device.

DC arc weld starter

DOEpatents

Campiotti, Richard H.; Hopwood, James E.

1990-01-01

A system for starting an arc for welding uses three DC power supplies, a high voltage supply for initiating the arc, an intermediate voltage supply for sustaining the arc, and a low voltage welding supply directly connected across the gap after the high voltage supply is disconnected.

Parameters of a supershort avalanche electron beam generated in atmospheric-pressure air

NASA Astrophysics Data System (ADS)

Tarasenko, V. F.

2011-05-01

Conditions under which the number of runaway electrons in atmospheric-pressure air reaches ˜5 × 1010 are determined. Recommendations for creating runaway electron accelerators are given. Methods for measuring the parameters of a supershort avalanche electron beam and X-ray pulses from gas-filled diodes, as well as the discharge current and gap voltage, are described. A technique for determining the instant of runaway electron generation with respect to the voltage pulse is proposed. It is shown that the reduction in the gap voltage and the decrease in the beam current coincide in time. The mechanism of intense electron beam generation in gas-filled diodes is analyzed. It is confirmed experimentally that, in optimal regimes, the number of electrons generated in atmospheric-pressure air with energies T > eU m , where U m is the maximum gap voltage, is relatively small.

Insight into RF power requirements and B1 field homogeneity for human MRI via rigorous FDTD approach.

PubMed

Ibrahim, Tamer S; Tang, Lin

2007-06-01

To study the dependence of radiofrequency (RF) power deposition on B(0) field strength for different loads and excitation mechanisms. Studies were performed utilizing a finite difference time domain (FDTD) model that treats the transmit array and the load as a single system. Since it was possible to achieve homogenous excitations across the human head model by varying the amplitudes/phases of the voltages driving the transmit array, studies of the RF power/B(0) field strength (frequency) dependence were achievable under well-defined/fixed/homogenous RF excitation. Analysis illustrating the regime in which the RF power is dependent on the square of the operating frequency is presented. Detailed studies focusing on the RF power requirements as a function of number of excitation ports, driving mechanism, and orientations/positioning within the load are presented. With variable phase/amplitude excitation, as a function of frequency, the peak-then-decrease relation observed in the upper axial slices of brain with quadrature excitation becomes more evident in the lower slices as well. Additionally, homogeneity optimization targeted at minimizing the ratio of maximum/minimum B(1) (+) field intensity within the region of interest, typically results in increased RF power requirements (standard deviation was not considered in this study). Increasing the number of excitation ports, however, can result in significant RF power reduction. (c) 2007 Wiley-Liss, Inc.

Physical mechanisms for reduction of the breakdown voltage in the circuit of a rod lightning protector with an opening microswitch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobrov, Yu. K.; Zhuravkov, I. V.; Ostapenko, E. I.

2010-12-15

The effect of air gap breakdown voltage reduction in the circuit with an opening microswitch is substantiated from the physical point of view. This effect can be used to increase the efficiency of lightning protection system with a rod lightning protector. The processes which take place in the electric circuit of a lightning protector with a microswitch during a voltage breakdown are investigated. Openings of the microswitch are shown to lead to resonance overvoltages in the dc circuit and, as a result, efficient reduction in the breakdown voltage in a lightning protector-thundercloud air gap.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, J.M.; Clifft, B.E.; Bollinger, L.M.

1995-08-08

A beam current limiter is disclosed for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity. 6 figs.

Indirectly sensing accelerator beam currents for limiting maximum beam current magnitude

DOEpatents

Bogaty, John M.; Clifft, Benny E.; Bollinger, Lowell M.

1995-01-01

A beam current limiter for sensing and limiting the beam current in a particle accelerator, such as a cyclotron or linear accelerator, used in scientific research and medical treatment. A pair of independently operable capacitive electrodes sense the passage of charged particle bunches to develop an RF signal indicative of the beam current magnitude produced at the output of a bunched beam accelerator. The RF signal produced by each sensing electrode is converted to a variable DC voltage indicative of the beam current magnitude. The variable DC voltages thus developed are compared to each other to verify proper system function and are further compared to known references to detect beam currents in excess of pre-established limits. In the event of a system malfunction, or if the detected beam current exceeds pre-established limits, the beam current limiter automatically inhibits further accelerator operation. A high Q tank circuit associated with each sensing electrode provides a narrow system bandwidth to reduce noise and enhance dynamic range. System linearity is provided by injecting, into each sensing electrode, an RF signal that is offset from the bunching frequency by a pre-determined beat frequency to ensure that subsequent rectifying diodes operate in a linear response region. The system thus provides a large dynamic range in combination with good linearity.

MEMS-based, RF-driven, compact accelerators

NASA Astrophysics Data System (ADS)

Persaud, A.; Seidl, P. A.; Ji, Q.; Breinyn, I.; Waldron, W. L.; Schenkel, T.; Vinayakumar, K. B.; Ni, D.; Lal, A.

2017-10-01

Shrinking existing accelerators in size can reduce their cost by orders of magnitude. Furthermore, by using radio frequency (RF) technology and accelerating ions in several stages, the applied voltages can be kept low paving the way to new ion beam applications. We make use of the concept of a Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) and have previously shown the implementation of its basic components using printed circuit boards, thereby reducing the size of earlier MEQALACs by an order of magnitude. We now demonstrate the combined integration of these components to form a basic accelerator structure, including an initial beam-matching section. In this presentation, we will discuss the results from the integrated multi-beam ion accelerator and also ion acceleration using RF voltages generated on-board. Furthermore, we will show results from Micro-Electro-Mechanical Systems (MEMS) fabricated focusing wafers, which can shrink the dimension of the system to the sub-mm regime and lead to cheaper fabrication. Based on these proof-of-concept results we outline a scaling path to high beam power for applications in plasma heating in magnetized target fusion and in neutral beam injectors for future Tokamaks. This work was supported by the Office of Science of the US Department of Energy through the ARPA-e ALPHA program under contracts DE-AC02-05CH11231.

Experimental Test Of Whether Electrostatically Charged Micro-organisms And Their Spores Contribute To The Onset Of Arcs Across Vacuum Gaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

none,; Grisham, Larry R.

2014-02-24

Recently it was proposed [L.R. Grisham, A. vonHalle, A.F. Carpe, Guy Rossi, K.R. Gilton, E.D. McBride, E.P. Gilson, A. Stepanov, T.N. Stevenson, Physics of Plasma 19 023107 (2012)] that one of the initiators of vacuum voltage breakdown between condu cting electrodes might be micro-organisms and their spores, previously deposited during exposure to air, which tnen become electrostatically charged when an electric potential is applied across the vacuum gap. The note describes a simple experiment to compare the number of voltage-conditioning pulses required to reach the nominal maxium operating voltage across a gap between two metallic conductors in a vacuum, comparingmore » cases in which biological cleaning was done just prior to pump-down with cases where this was not done, with each preceded by exposure to ambient air for three days. Based upon these results, it does not appear that air-deposited microbes and their spores constitute a major pathway for arc initiation, at least for exposure periods of a few days, and for vacuum gaps of a few millimeters, in the regime where voltage holding is usually observed to vary linearly with gap distance« less

Characteristics and dispersity of a two gap capillary discharge applied for long spark gap ignition in air

NASA Astrophysics Data System (ADS)

Huang, Dong; Yang, Lanjun; Guo, Haishan; Zhang, Zhiyuan; Jiang, Hongqiu; Xu, Haipeng

2017-07-01

In this paper, the characteristics and dispersity of a two gap capillary (TGC) discharge applied for long spark gap ignition are studied. Under the same discharge condition, 30 repetitive discharges are done to get a certain number of data samples. Accordingly, the change trend of the characteristics and the dispersity with the charging voltage of C1 are analyzed statistically. The delay of soft capillary discharge is determined by the saturation rate of the magnetic core of the pulse transformer and decreases with the increase in the charging voltage. The main discharge delay decreases from 1.0 kV to 2.0 kV and stops the decreasing trend when the charging voltage increases to 2.5 kV. In contrast, the current amplitude of soft capillary discharge and main discharge increases with charging voltage. Long tail extinction is witnessed at the charging voltage of 1.0 kV and the major cause is the insufficient pressure in the post discharge. The waveform of the capillary arc resistivity is U-like shape and the minimum resistivity decreases with the increase in the charging voltage. Meanwhile, the arc resistivity in the ascending stage is much higher than that in the descending stage with the same value of the discharge current. The energy consumption of the TGC discharge can be mainly divided into four parts and more than 70% of the energy is consumed in main discharge.

Initial experiments with a versatile multi-aperture negative-ion source and related improvements

NASA Astrophysics Data System (ADS)

Cavenago, M.

2016-03-01

A relatively compact ion source, named NIO1 (Negative-Ion Optimization 1), with 9 beam apertures for H- extraction is under commissioning, in collaboration between Consorzio RFX and INFN, to provide a test bench for source optimizations, for innovations, and for simulation code validations in support of Neutral Beam Injectors (NBI) optimization. NIO1 installation includes a 60kV high-voltage deck, power supplies for a 130mA ion nominal current, an X-ray shield, and beam diagnostics. Plasma is heated with a tunable 2MHz radiofrequency (rf) generator. Physical aspects of source operation and rf-plasma coupling are discussed. NIO1 tuning procedures and plasma experiments both with air and with hydrogen as filling gas are described, up to a 1.7kW rf power. Transitions to inductively coupled plasma are reported in the case of air (for a rf power of about 0.5kW and a gas pressure below 2Pa), discussing their robust signature in optical emission, and briefly summarized for hydrogen, where more than 1kW rf power is needed.

Coordinated Research Program in Pulsed Power Physics.

DTIC Science & Technology

1984-02-27

storage element and the spark gap sectional area at the injected beam) which helps reduce elec- are both contained within the high pressure vessel of a...ns At the present time the continued research is aimed at duration of the first region corresponds closely to the FWHM answering various unresolved...10-ns e-beam has been used to trigger a spark gap pressurized to 3 atm of N2 . The gap voltage is close to self-breakdown voltage (Le., 0.95 Vb

Gas and plasma dynamics of RF discharge jet of low pressure in a vacuum chamber with flat electrodes and inside tube, influence of RF discharge on the steel surface parameters

NASA Astrophysics Data System (ADS)

Khristoliubova, V. I.; Kashapov, N. F.; Shaekhov, M. F.

2016-06-01

Researches results of the characteristics of the RF discharge jet of low pressure and the discharge influence on the surface modification of high speed and structural steels are introduced in the article. Gas dynamics, power and energy parameters of the RF low pressure discharge flow in the discharge chamber and the electrode gap are studied in the presence of the materials. Plasma flow rate, discharge power, the concentration of electrons, the density of RF power, the ion current density, and the energy of the ions bombarding the surface materials are considered for the definition of basic properties crucial for the process of surface modification of materials as they were put in the plasma jet. The influence of the workpiece and effect of products complex configuration on the RF discharge jet of low pressure is defined. The correlation of the input parameters of the plasma unit on the characteristics of the discharge is established.

Gating of Connexin Channels by transjunctional-voltage: Conformations and models of open and closed states.

PubMed

Bargiello, Thaddeus A; Oh, Seunghoon; Tang, Qingxiu; Bargiello, Nicholas K; Dowd, Terry L; Kwon, Taekyung

2018-01-01

Voltage is an important physiologic regulator of channels formed by the connexin gene family. Connexins are unique among ion channels in that both plasma membrane inserted hemichannels (undocked hemichannels) and intercellular channels (aggregates of which form gap junctions) have important physiological roles. The hemichannel is the fundamental unit of gap junction voltage-gating. Each hemichannel displays two distinct voltage-gating mechanisms that are primarily sensitive to a voltage gradient formed along the length of the channel pore (the transjunctional voltage) rather than sensitivity to the absolute membrane potential (V m or V i-o ). These transjunctional voltage dependent processes have been termed V j - or fast-gating and loop- or slow-gating. Understanding the mechanism of voltage-gating, defined as the sequence of voltage-driven transitions that connect open and closed states, first and foremost requires atomic resolution models of the end states. Although ion channels formed by connexins were among the first to be characterized structurally by electron microscopy and x-ray diffraction in the early 1980's, subsequent progress has been slow. Much of the current understanding of the structure-function relations of connexin channels is based on two crystal structures of Cx26 gap junction channels. Refinement of crystal structure by all-atom molecular dynamics and incorporation of charge changing protein modifications has resulted in an atomic model of the open state that arguably corresponds to the physiologic open state. Obtaining validated atomic models of voltage-dependent closed states is more challenging, as there are currently no methods to solve protein structure while a stable voltage gradient is applied across the length of an oriented channel. It is widely believed that the best approach to solve the atomic structure of a voltage-gated closed ion channel is to apply different but complementary experimental and computational methods and to use the resulting information to derive a consensus atomic structure that is then subjected to rigorous validation. In this paper, we summarize our efforts to obtain and validate atomic models of the open and voltage-driven closed states of undocked connexin hemichannels. This article is part of a Special Issue entitled: Gap Junction Proteins edited by Jean Claude Herve. Copyright © 2017 Elsevier B.V. All rights reserved.

High intensity single bunch operation with heavy periodic transient beam loading in wide band rf cavities

NASA Astrophysics Data System (ADS)

Tamura, Fumihiko; Hotchi, Hideaki; Schnase, Alexander; Yoshii, Masahito; Yamamoto, Masanobu; Ohmori, Chihiro; Nomura, Masahiro; Toda, Makoto; Shimada, Taihei; Hasegawa, Katsushi; Hara, Keigo

2015-09-01

The rapid cycling synchrotron (RCS) in the Japan Proton Accelerator Research Complex (J-PARC) was originally designed to accelerate two high intensity bunches, while some of neutron experiments in the materials and life science experimental facility and a muon experiment using main ring beams require a single bunch operation mode, in which one of the two rf buckets is filled and the other is empty. The beam intensity in the single bunch operation has been limited by longitudinal beam losses due to the rf bucket distortions by the wake voltage of the odd harmonics (h =1 ,3 ,5 ) in the wide band magnetic alloy cavities. We installed an additional rf feedforward system to compensate the wake voltages of the odd harmonics (h =1 ,3 ,5 ). The additional system has a similar structure as the existing feedforward system for the even harmonics (h =2 ,4 ,6 ). We describe the function of the feedforward system for the odd harmonics, the commissioning methodology, and the commissioning results. The longitudinal beam losses during the single bunch acceleration disappeared with feedforward for the odd harmonics. We also confirmed that the beam quality in the single bunch acceleration are similar to that of the normal operation with two bunches. Thus, high intensity single bunch acceleration at the intensity of 2.3 ×1013 protons per bunch has been achieved in the J-PARC RCS. This article is a follow-up of our previous article, Phys. Rev. ST Accel. Beams 14, 051004 (2011). The feedforward system extension for single bunch operation was successful.

Series resonance inverter with triggered vacuum gaps

NASA Astrophysics Data System (ADS)

Damstra, Geert C.; Zhang, X.

1994-05-01

Series resonance inverters based on semi-conductor switching elements are well-known and have a wide range of application, mainly for lower voltages. For high voltage application many switching elements have to be put in series to obtain sufficient blocking voltage. Voltage grinding and multiple gate control elements are needed. There is much experience with the triggered vacuum gaps as high voltage/high current single shot elements, for example in reignition circuits for synthetic circuit breaker tests. These elements have a blocking voltage of 50 - 100 kV and are triggerable by a light fiber control device. A prototype inverter has been developed that generates 0.1 Hz, 30 kV AC voltages with a flat top for tests on cables and capacitors of many micro farads fed from a low voltage supply of about 600 V. Only two TVG elements are needed to switch the resonant circuit alternatively on the positive or negative supply. The resonant circuit itself consists of the capacitance of the testobject and a high quality inductor that determines the frequency and the peak current of the voltage reversing process.

Studies on the Extraction Region of the Type VI RF Driven H- Ion Source

NASA Astrophysics Data System (ADS)

McNeely, P.; Bandyopadhyay, M.; Franzen, P.; Heinemann, B.; Hu, C.; Kraus, W.; Riedl, R.; Speth, E.; Wilhelm, R.

2002-11-01

IPP Garching has spent several years developing a RF driven H- ion source intended to be an alternative to the current ITER (International Thermonuclear Experimental Reactor) reference design ion source. A RF driven source offers a number of advantages to ITER in terms of reduced costs and maintenance requirements. Although the RF driven ion source has shown itself to be competitive with a standard arc filament ion source for positive ions many questions still remain on the physics behind the production of the H- ion beam extracted from the source. With the improvements that have been implemented to the BATMAN (Bavarian Test Machine for Negative Ions) facility over the last two years it is now possible to study both the extracted ion beam and the plasma in the vicinity of the extraction grid in greater detail. This paper will show the effect of changing the extraction and acceleration voltage on both the current and shape of the beam as measured on the calorimeter some 1.5 m downstream from the source. The extraction voltage required to operate in the plasma limit is 3 kV. The perveance optimum for the extraction system was determined to be 2.2 x 10-6 A/V3/2 and occurs at 2.7 kV extraction voltage. The horizontal and vertical beam half widths vary as a function of the extracted ion current and the horizontal half width is generally smaller than the vertical. The effect of reducing the co-extracted electron current via plasma grid biasing on the H- current extractable and the beam profile from the source is shown. It is possible in the case of a silver contaminated plasma to reduce the co-extracted electron current to 20% of the initial value by applying a bias of 12 V. In the case where argon is present in the plasma, biasing is observed to have minimal effect on the beam half width but in a pure hydrogen plasma the beam half width increases as the bias voltage increases. New Langmuir probe studies that have been carried out parallel to the plasma grid (in the vicinity of the peak of the external magnetic filter field) and changes to source parameters as a function of power, and argon addition are reported. The behaviour of the electron density is different when the plasma is argon seeded showing a strong increase with RF power. The plasma potential is decreased by 2 V when argon is added to the plasma. The effect of the presence of unwanted silver sputtered from the Faraday screen by Ar+ ions on both the source performance and the plasma parameters is also presented. The silver dramatically downgraded source performance in terms of current density and produced an early saturation of current with applied RF power. Recently, collaboration was begun with the Technical University of Augsburg to perform spectroscopic measurements on the Type VI ion source. The final results of this analysis are not yet ready but some interesting initial observations on the gas temperature, disassociation degree and impurity ions will be presented.

Theoretical study of a dual harmonic system and its application to the CSNS/RCS

NASA Astrophysics Data System (ADS)

Yuan, Yao-Shuo; Wang, Na; Xu, Shou-Yan; Yuan, Yue; Wang, Sheng

2015-12-01

Dual harmonic systems have been widely used in high intensity proton synchrotrons to suppress the space charge effect, as well as reduce the beam loss. To investigate the longitudinal beam dynamics in a dual rf system, the potential well, the sub-buckets in the bunch and the multi-solutions of the phase equation are studied theoretically in this paper. Based on these theoretical studies, optimization of bunching factor and rf voltage waveform are made for the dual harmonic rf system in the upgrade phase of the China Spallation Neutron Source Rapid Cycling Synchrotron (CSNS/RCS). In the optimization process, the simulation with space charge effect is done using a newly developed code, C-SCSIM. Supported by National Natural Science Foundation of China (11175193)

Design of RF energy harvesting platforms for power management unit with start-up circuits

NASA Astrophysics Data System (ADS)

Costanzo, Alessandra; Masotti, Diego

2013-12-01

In this contribution we discuss an unconventional rectifier design dedicated to RF energy harvesting from ultra-low sources, such as ambient RF sources which are typically of the order of few to few tens of μW. In such conditions unsuccessful results may occur if the rectenna is directly connected to its actual load since either the minimum power or the minimum activation voltage may not be simultaneously available. For this reason a double-branch rectifier topology is considered for the power management unit (PMU), instead of traditional single-branch one. The new PMU, interposed between the rectenna and application circuits, allows the system to operate with significantly lower input power with respect to the traditional solution, while preserving efficiency during steady-state power conversion.

Experimental results of the 140 GHz, 1 MW long-pulse gyrotron for W7-X

NASA Astrophysics Data System (ADS)

Koppenburg, K.; Arnold, A.; Borie, E.; Dammertz, G.; Giguet, E.; Heidinger, R.; Illy, S.; Kuntze, M.; Le Cloarec, G.; Legrand, F.; Leonhardt, W.; Lievin, C.; Neffe, G.; Piosczyk, B.; Schmid, M.; Thumm, M.

2003-02-01

Gyrotrons at high frequency with high output power are mainly developed for microwave heating and current drive in plasmas for thermonuclear fusion. For the stellarator Wendelstein 7-X now under construction at IPP Greifswald, Germany, a 10 MW ECRH system is foreseen. A 1 MW, 140 GHz long-pulse gyrotron has been designed and a pre-prototype (Maquette) has been constructed and tested in an European collaboration between FZK Karlsruhe, CRPP Lausanne, IPF Suttgart, IPP Greifswald, CEA Cadarache and TED Vélizy [1]. The cylindrical cavity is designed for operating in the TE28,8 mode. It is a standard tapered cavity with linear input downtaper and a non-linear uptaper. The diameter of the cylindrical part is 40.96 mm. The transitions between tapers and straight section are smoothly rounded to avoid mode conversion. The TE28,8-cavity mode is transformed to a Gaussian TEM0,0 output mode by a mode converter consisting of a rippled-wall waveguide launcher followed by a three mirror system. The output window uses a single, edge cooled CVD-diamond disk with an outer diameter of 106 mm, a window aperture of 88 mm and a thickness of 1.8 mm corresponding to four half wavelengths. The collector is at ground potential, and a depression voltage for energy recovery can be applied to the cavity and to the first two mirrors. Additional normal-conducting coils are employed to the collector in order to produce an axial magnetic field for sweeping the electron beam with a frequency of 7 Hz. A temperature limited magnetron injection gun without intermediate anode ( diode type ) is used. In short pulse operation at the design current of 40 A an output power of 1 MW could be achieved for an accelerating voltage of 82 kV without depression voltage and with a depression voltage of 25 kV an output power of 1.15 MW at an accelerating voltage of 84 kV has been measured. For these values an efficiency of 49% was obtained. At constant accelerating voltages, the output power did not change up to depression voltages of 33 kV. The output beam of the gyrotron is injected into an RF-tight microwave chamber which is equipped with two water-cooled mirrors directing the beam towards the 1 MW water load. The second mirror inside the microwave chamber contains a directional output coupler formed by a row of holes in the mirror surface. A diode detector is connected to the directional coupler and the forward power can be determined once the signal has been calibrated. This was performed by calorimetric measurement of the RF wave in short-pulse measurements. The mode purity of the Gaussian beam was measured by an IR camera and a thin dielectric target plate placed at different positions across the RF beam. The measured beam distribution agrees very well with the theoretical predictions. After some problems with the RF load, long-pulse operation was performed: The power measurements were done by the signal of the diode detector placed at the second mirror. The measured output power of the calorimetric RF-load normally shows values reduced by about 20%. Output powers of 1 MW could be achieved for 10 s, and an energy as high as 90 MJ per pulse has been produced with an output power of 0.64 MW. The pulse lengths were mainly determined by the preset values, and due to lack of experimental time no attempt was made to increase the pulse length. Only for a 100 s pulse with 0.74 MW output power, a limitation was found due to a pressure increase beyond about 10-7mbar. The gyrotron was sent back to the manufacturer Thales Electron Devices for a visual inspection, and an improved prototype was built and delivered to Forschungszentrum Karlsruhe in the middle of April 2002.

High voltage switch triggered by a laser-photocathode subsystem

DOEpatents

Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

2013-01-08

A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

Single electron counting using a dual MCP assembly

NASA Astrophysics Data System (ADS)

Yang, Yuzhen; Liu, Shulin; Zhao, Tianchi; Yan, Baojun; Wang, Peiliang; Yu, Yang; Lei, Xiangcui; Yang, Luping; Wen, Kaile; Qi, Ming; Heng, Yuekun

2016-09-01

The gain, pulse height resolution and peak-to-valley ratio of single electrons detected by using a Chevron configured Microchannel Plate (MCP) assembly are studied. The two MCPs are separated by a 280 μm gap and are biased by four electrodes. The purpose of the study is to determine the optimum bias voltage arrangements for single electron counting. By comparing the results of various bias voltage combinations, we conclude that good performance for the electron counting can be achieved by operating the MCP assembly in saturation mode. In addition, by applying a small reverse bias voltage across the gap while adjusting the bias voltages of the MCPs, optimum performance of electron counting can be obtained.

Reliability Improvement of Ground Fault Protection System Using an S-Type Horn Attachment Gap in AC Feeding System

NASA Astrophysics Data System (ADS)

Ajiki, Kohji; Morimoto, Hiroaki; Shimokawa, Fumiyuki; Sakai, Shinya; Sasaki, Kazuomi; Sato, Ryogo

Contact wires used in feeding system for electric railroad are insulated by insulators. However, insulation of an insulator sometimes breaks down by surface dirt of an insulator and contact with a bird. The insulator breakdown derives a ground fault in feeding system. Ground fault will cause a human electric shock and a destruction of low voltage electric equipment. In order to prevent the damage by ground fault, an S-type horn has been applicable as equipped on insulators of negative feeder and protective wire until present. However, a concrete pole breaks down at the time of the ground fault because a spark-over voltage of the S-type horn is higher than a breakdown voltage of a concrete pole. Farther, the S-type horn installed in the steel tube pole does not discharge a case, because the earth resistance of a steel tube pole is very small. We assumed that we could solve these troubles by changing the power frequency spark-over voltage of the S-type horn from 12kV to 3kV. Accordingly, we developed an attachment gap that should be used to change the power frequency spark-over voltage of the S-type horn from 12kV to 3kV. The attachment gap consists of a gas gap arrester and a zinc oxide element. By the dynamic current test and the artificial ground fault test, we confirmed that the attachment gap in the S-type horn could prevent a trouble at the time of the ground fault.

Electron bunch structure in energy recovery linac with high-voltage dc photoelectron gun

NASA Astrophysics Data System (ADS)

Saveliev, Y. M.; Jackson, F.; Jones, J. K.; McKenzie, J. W.

2016-09-01

The internal structure of electron bunches generated in an injector line with a dc photoelectron gun is investigated. Experiments were conducted on the ALICE (accelerators and lasers in combined experiments) energy recovery linac at Daresbury Laboratory. At a relatively low dc gun voltage of 230 kV, the bunch normally consisted of two beamlets with different electron energies, as well as transverse and longitudinal characteristics. The beamlets are formed at the head and the tail of the bunch. At a higher gun voltage of 325 kV, the beam substructure is much less pronounced and could be observed only at nonoptimal injector settings. Experiments and computer simulations demonstrated that the bunch structure develops during the initial beam acceleration in the superconducting rf booster cavity and can be alleviated either by increasing the gun voltage to the highest possible level or by controlling the beam acceleration from the gun voltage in the first accelerating structure.

RF lockout circuit for electronic locking system

NASA Astrophysics Data System (ADS)

Becker, Earl M., Jr.; Miller, Allen

1991-02-01

An electronics lockout circuit was invented that includes an antenna adapted to receive radio frequency signals from a transmitter, and a radio frequency detector circuit which converts the radio frequency signals into a first direct current voltage indicative of the relative strength of the field resulting from the radio frequency signals. The first direct current voltage is supplied to a trigger circuit which compares this direct current voltage to an adjustable direct current reference voltage. This provides a second direct current voltage at the output whenever the amplitude of the first direct current voltage exceeds the amplitude of the reference voltage provided by the comparator circuit. This is supplied to a disconnect relay circuit which, upon receiving a signal from the electronic control unit of an electronic combination lock during the time period at which the second direct current voltage is present, isolates the door strike coil of a security door from the electronic control unit. This prevents signals falsely generated by the electronic control unit because of radio frequency signals in the vicinity of the electronic control unit energizing the door strike coil and accidentally opening a security door.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

Water dissociation in a radio-frequency electromagnetic field with ex situ electrodes—modelling of discharge initiation

NASA Astrophysics Data System (ADS)

Schneider, Jens; Holzer, Frank; Rabe, Carsten; Häupl, Tilmann; Kopinke, Frank-Dieter; Roland, Ulf

2013-04-01

Applying a new experimental design with a capillary glass reactor and plate electrodes outside of the reactor allowed the initiation of discharges in aqueous electrolytes under the influence of a radio-frequency (RF) electromagnetic field. This study focused on the mechanism leading to the initiation of such discharges in the restriction of a glass tube. The light emission correlated with discharges was analysed with optical emission spectroscopy. Electrons with energies between 20 and 45 eV were responsible for the dissociation of water molecules into (excited) OH, H and O radicals. Current-voltage characteristics were measured before and under discharge conditions. Modelling of the experimental setup and simulation of electrical field strength distribution support the hypothesis of the origin of discharges in general and experimental findings such as ring-shaped discharges and a minimum solution conductivity of about 1 S m-1 required for discharge initiation with RF voltages of 2 kV.

Experimental study of rotating wind turbine breakdown characteristics in large scale air gaps

NASA Astrophysics Data System (ADS)

Wang, Yu; Qu, Lu; Si, Tianjun; Ni, Yang; Xu, Jianwei; Wen, Xishan

2017-06-01

When a wind turbine is struck by lightning, its blades are usually rotating. The effect of blade rotation on a turbine’s ability to trigger a lightning strike is unclear. Therefore, an arching electrode was used in a wind turbine lightning discharge test to investigate the difference in lightning triggering ability when blades are rotating and stationary. A negative polarity switching waveform of 250/2500 μs was applied to the arching electrode and the up-and-down method was used to calculate the 50% discharge voltage. Lightning discharge tests of a 1:30 scale wind turbine model with 2, 4, and 6 m air gaps were performed and the discharge process was observed. The experimental results demonstrated that when a 2 m air gap was used, the breakdown voltage increased as the blade speed was increased, but when the gap length was 4 m or longer, the trend was reversed and the breakdown voltage decreased. The analysis revealed that the rotation of the blades changes the charge distribution in the blade-tip region, promotes upward leader development on the blade tip, and decreases the breakdown voltage. Thus, the blade rotation of a wind turbine increases its ability to trigger lightning strikes.

A microfluidic microprocessor: controlling biomimetic containers and cells using hybrid integrated circuit/microfluidic chips.

PubMed

Issadore, David; Franke, Thomas; Brown, Keith A; Westervelt, Robert M

2010-11-07

We present an integrated platform for performing biological and chemical experiments on a chip based on standard CMOS technology. We have developed a hybrid integrated circuit (IC)/microfluidic chip that can simultaneously control thousands of living cells and pL volumes of fluid, enabling a wide variety of chemical and biological tasks. Taking inspiration from cellular biology, phospholipid bilayer vesicles are used as robust picolitre containers for reagents on the chip. The hybrid chip can be programmed to trap, move, and porate individual living cells and vesicles and fuse and deform vesicles using electric fields. The IC spatially patterns electric fields in a microfluidic chamber using 128 × 256 (32,768) 11 × 11 μm(2) metal pixels, each of which can be individually driven with a radio frequency (RF) voltage. The chip's basic functions can be combined in series to perform complex biological and chemical tasks and can be performed in parallel on the chip's many pixels for high-throughput operations. The hybrid chip operates in two distinct modes, defined by the frequency of the RF voltage applied to the pixels: Voltages at MHz frequencies are used to trap, move, and deform objects using dielectrophoresis and voltages at frequencies below 1 kHz are used for electroporation and electrofusion. This work represents an important step towards miniaturizing the complex chemical and biological experiments used for diagnostics and research onto automated and inexpensive chips.

A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

NASA Astrophysics Data System (ADS)

Riyan, Wang; Jiwei, Huang; Zhengping, Li; Weifeng, Zhang; Longyue, Zeng

2012-03-01

A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented. With a low noise transconductance amplifier (LNA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves a 45 dB conversion voltage gain, 2.7 dB NF, -7 dBm IIP3, and +60 dBm IIP2 with calibration from 2.3 to 2.7 GHz. The total RF front end with divider draws 40 mA from a single 1.2-V supply.

Estimates of RF-induced erosion at antenna-connected beryllium plasma-facing components in JET

DOE PAGES

Klepper, C. C.; Borodin, D.; Groth, M.; ...

2016-01-18

Radio-frequency (RF)-enhanced surface erosion of beryllium (Be) plasma-facing components is explored, for the first time, using the ERO code. We applied the code in order to measure the RF-enhanced edge Be line emission at JET Be outboard limiters, in the presence of high-power, ion cyclotronresonance heating (ICRH) in L-mode discharges. In this first modelling study, the RF sheath effect from an ICRH antenna on a magnetically connected, limiter region is simulated by adding a constant potential to the local sheath, in an attempt to match measured increases in local Be I and Be II emission of factors of 2 3.more » It was found that such increases are readily simulated with added potentials in the range of 100 200 V, which is compatible with expected values for potentials arising from rectification of sheath voltage oscillations from ICRH antennas in the scrape-off layer plasma. We also estimated absolute erosion values within the uncertainties in local plasma conditions.« less

Development of an 83.2 MHz, 3.2 kW solid-state RF amplifier using Wilkinson power divider and combiner for a 10 MeV cyclotron

NASA Astrophysics Data System (ADS)

Song, Ho Seung; Ghergherehchi, Mitra; Oh, Seyoung; Chai, Jong Seo

2017-03-01

We design a stripline-type Wilkinson power divider and combiner for a 3.2 kW solid-state radio frequency (RF) amplifier module and optimize this setup. A Teflon-based printed circuit board is used in the power combiner to transmit high RF power efficiently in the limited space. The reflection coefficient (S11) and insertion loss (S21) related to impedance matching are characterized to determine the optimization process. The resulting two-way divider reflection coefficient and insertion loss were -48.00 dB and -3.22 dB, respectively. The two-way power combiner reflection coefficient and insertion loss were -20 dB and -3.3 dB, respectively. Moreover, the 3.2 kW solid-state RF power test results demonstrate that the proposed power divider and combiner exhibit a maximum efficiency value of 71.3% (combiner loss 5%) at 48 V supply voltage.

Retarding field analyzer for ion energy distribution measurements at a radio-frequency biased electrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gahan, D.; Hopkins, M. B.; Dolinaj, B.

2008-03-15

A retarding field energy analyzer designed to measure ion energy distributions impacting a radio-frequency biased electrode in a plasma discharge is examined. The analyzer is compact so that the need for differential pumping is avoided. The analyzer is designed to sit on the electrode surface, in place of the substrate, and the signal cables are fed out through the reactor side port. This prevents the need for modifications to the rf electrode--as is normally the case for analyzers built into such electrodes. The capabilities of the analyzer are demonstrated through experiments with various electrode bias conditions in an inductively coupledmore » plasma reactor. The electrode is initially grounded and the measured distributions are validated with the Langmuir probe measurements of the plasma potential. Ion energy distributions are then given for various rf bias voltage levels, discharge pressures, rf bias frequencies - 500 kHz to 30 MHz, and rf bias waveforms - sinusoidal, square, and dual frequency.« less

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Zhang, Xiao-Yu; Tan, Ren-Bing; Sun, Jian-Dong; Li, Xin-Xing; Zhou, Yu; Lü, Li; Qin, Hua

2015-10-01

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage Vg, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector. Project supported by the National Natural Science Foundation of China (Grant No. 61107093), the Suzhou Science and Technology Project, China (Grant No. ZXG2012024), and the Youth Innovation Promotion Association, Chinese Academy of Sciences (Grant No. 2012243).

Fully parameterized model of a voltage-driven capacitive coupled micromachined ohmic contact switch for RF applications

NASA Astrophysics Data System (ADS)

Heeb, Peter; Tschanun, Wolfgang; Buser, Rudolf

2012-03-01

A comprehensive and completely parameterized model is proposed to determine the related electrical and mechanical dynamic system response of a voltage-driven capacitive coupled micromechanical switch. As an advantage over existing parameterized models, the model presented in this paper returns within few seconds all relevant system quantities necessary to design the desired switching cycle. Moreover, a sophisticated and detailed guideline is given on how to engineer a MEMS switch. An analytical approach is used throughout the modelling, providing representative coefficients in a set of two coupled time-dependent differential equations. This paper uses an equivalent mass moving along the axis of acceleration and a momentum absorption coefficient. The model describes all the energies transferred: the energy dissipated in the series resistor that models the signal attenuation of the bias line, the energy dissipated in the squeezed film, the stored energy in the series capacitor that represents a fixed separation in the bias line and stops the dc power in the event of a short circuit between the RF and dc path, the energy stored in the spring mechanism, and the energy absorbed by mechanical interaction at the switch contacts. Further, the model determines the electrical power fed back to the bias line. The calculated switching dynamics are confirmed by the electrical characterization of the developed RF switch. The fabricated RF switch performs well, in good agreement with the modelled data, showing a transition time of 7 µs followed by a sequence of bounces. Moreover, the scattering parameters exhibit an isolation in the off-state of >8 dB and an insertion loss in the on-state of <0.6 dB up to frequencies of 50 GHz. The presented model is intended to be integrated into standard circuit simulation software, allowing circuit engineers to design the switch bias line, to minimize induced currents and cross actuation, as well as to find the mechanical structure dimensions necessary for the desired switching time and actuation voltage waveform. Moreover, process related design rules can be automatically verified.

Center conductor diagnostic for multipactor detection in inaccessible geometries.

PubMed

Chaplin, Vernon H; Hubble, Aimee A; Clements, Kathryn A; Graves, Timothy P

2017-01-01

Electron collecting current probes are the most reliable diagnostic of multipactor and radiofrequency (RF) ionization breakdown; however, stand-alone probes can only be used in test setups where the breakdown region is physically accessible. This paper describes techniques for measuring multipactor current directly on the center conductor of a coaxial RF device (or more generally, on the signal line in any two-conductor RF system) enabling global multipactor detection with improved sensitivity compared to other common diagnostics such as phase null, third harmonic, and reflected power. The center conductor diagnostic may be AC coupled for use in systems with a low DC impedance between the center conductor and ground. The effect of DC bias on the breakdown threshold was studied: in coaxial geometry, the change in threshold was <1 dB for positive biases satisfying V DC /V RF0 <0.8, where V RF0 is the RF voltage amplitude at the unperturbed breakdown threshold. In parallel plate geometry, setting V DC /V RF0 <0.2 was necessary to avoid altering the threshold by more than 1 dB. In most cases, the center conductor diagnostic functions effectively with no bias at all-this is the preferred implementation, but biases in the range V DC =0-10V may be applied if necessary. The polarity of the detected current signal may be positive or negative depending on whether there is net electron collection or emission globally.

RF current distribution and topology of RF sheath potentials in front of ICRF antennae

NASA Astrophysics Data System (ADS)

Colas, L.; Heuraux, S.; Brémond, S.; Bosia, G.

2005-08-01

The 2D (radial/poloidal) spatial topology of RF-induced convective cells developing radially in front of ion cyclotron range of frequency (ICRF) antennae is investigated, in relation to the spatial distribution of RF currents over the metallic structure of the antenna. This is done via a Green's function, determined from the ICRF wave coupling equations, and well-suited to open field lines extending toroidally far away on both sides of the antenna. Using such formalism, combined with a full-wave calculation using the 3D antenna code ICANT (Pécoul S. et al 2000 Comput. Phys. Commun. 146 166-87), two classes of convective cells are analysed. The first one appears in front of phased arrays of straps, and depending on the strap phasing, its topology is interpreted using the poloidal profiles of either the RF current or the RF voltage of the strip line theory. The other class of convective cells is specific to antenna box corners and is evidenced for the first time. Based on such analysis, general design rules are worked out in order to reduce the RF-sheath potentials, which generalize those proposed in the earlier literature, and concrete antenna design options are tested numerically. The merits of aligning all strap centres on the same (tilted) flux tube, and of reducing the antenna box toroidal conductivity in its lower and upper parts, are discussed.

Optimum Design of Millimeter-Wave Impatt Diode Oscillators.

DTIC Science & Technology

1983-10-01

assumed to be a quasi-sinusoid of the form v(t) a Vej"t (2.1) where V = V(t) and w = w(t) are real slowly varying functions of time . Slowly varying can be...are used: i dVF = 1 HF (3.12) RF dt 4 and 6 = w- i. (3.13) Therefore, the RF voltage and phase at different times can be calculated: VRF(t + dt ) = VF...15 2.2.2 The Circuit Model 18 2.2.3 Thermal Resistance 21 2.2.4 Thermal- Time Constant 23 2.3 Usefulness and Limitations of the Oscillator Model 26

Experimental Study of RF Energy Transfer System in Indoor Environment

NASA Astrophysics Data System (ADS)

Adami, S.-E.; Proynov, P. P.; Stark, B. H.; Hilton, G. S.; Craddock, I. J.

2014-11-01

This paper presents a multi-transmitter, 2.43 GHz Radio-Frequency (RF) wireless power transfer (WPT) system for powering on-body devices. It is shown that under typical indoor conditions, the received power range spans several orders of magnitude from microwatts to milliwatts. A body-worn dual-polarised rectenna (rectifying antenna) is presented, designed for situations where the dominant polarization is unpredictable, as is the case for the on-body sensors. Power management circuitry is demonstrated that optimally loads the rectenna even under highly intermittent conditions, and boosts the voltage to charge an on-board storage capacitor.

Carbon Nanotube Switches for Communication and Memory Applications

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Epp, Larry; Wong, Eric W.; Kowalczyk, Robert

2008-01-01

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S.

2016-05-06

Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters

NASA Astrophysics Data System (ADS)

Takahashi, Hajime; Hanafusa, Yuki; Kimura, Yoshinari; Kitamura, Masatoshi

2018-03-01

Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15 V.

DC-based smart PV-powered home energy management system based on voltage matching and RF module

PubMed Central

Hasan, W. Z. W.

2017-01-01

The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances’ consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances’ energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11–123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results. PMID:28934271

IEEE-802.15.4-based low-power body sensor node with RF energy harvester.

PubMed

Tran, Thang Viet; Chung, Wan-Young

2014-01-01

This paper proposes the design and implementation of a low-voltage and low-power body sensor node based on the IEEE 802.15.4 standard to collect electrocardiography (ECG) and photoplethysmography (PPG) signals. To achieve compact size, low supply voltage, and low power consumption, the proposed platform is integrated into a ZigBee mote, which contains a DC-DC booster, a PPG sensor interface module, and an ECG front-end circuit that has ultra-low current consumption. The input voltage of the proposed node is very low and has a wide range, from 0.65 V to 3.3 V. An RF energy harvester is also designed to charge the battery during the working mode or standby mode of the node. The power consumption of the proposed node reaches 14 mW in working mode to prolong the battery lifetime. The software is supported by the nesC language under the TinyOS environment, which enables the proposed node to be easily configured to function as an individual health monitoring node or a node in a wireless body sensor network (BSN). The proposed node is used to set up a wireless BSN that can simultaneously collect ECG and PPG signals and monitor the results on the personal computer.

DC-based smart PV-powered home energy management system based on voltage matching and RF module.

PubMed

Sabry, Ahmad H; Hasan, W Z W; Ab Kadir, Mza; Radzi, M A M; Shafie, S

2017-01-01

The main tool for measuring system efficiency in homes and offices is the energy monitoring of the household appliances' consumption. With the help of GUI through a PC or smart phone, there are various applications that can be developed for energy saving. This work describes the design and prototype implementation of a wireless PV-powered home energy management system under a DC-distribution environment, which allows remote monitoring of appliances' energy consumptions and power rate quality. The system can be managed by a central computer, which obtains the energy data based on XBee RF modules that access the sensor measurements of system components. The proposed integrated prototype framework is characterized by low power consumption due to the lack of components and consists of three layers: XBee-based circuit for processing and communication architecture, solar charge controller, and solar-battery-load matching layers. Six precise analogue channels for data monitoring are considered to cover the energy measurements. Voltage, current and temperature analogue signals were accessed directly from the remote XBee node to be sent in real time with a sampling frequency of 11-123 Hz to capture the possible surge power. The performance shows that the developed prototype proves the DC voltage matching concept and is able to provide accurate and precise results.

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Tengxing; Peng, Yujia; Jiang, Wei

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Dipolar DC Collisional Activation in a "Stretched" 3-D Ion Trap: The Effect of Higher Order Fields on rf-Heating

NASA Astrophysics Data System (ADS)

Prentice, Boone M.; McLuckey, Scott A.

2012-04-01

Applying dipolar DC (DDC) to the end-cap electrodes of a 3-D ion trap operated with a bath gas at roughly 1 mTorr gives rise to `rf-heating' and can result in collision-induced dissociation (CID). This approach to ion trap CID differs from the conventional single-frequency resonance excitation approach in that it does not rely on tuning a supplementary frequency to coincide with the fundamental secular frequeny of the precursor ion of interest. Simulations using the program ITSIM 5.0 indicate that application of DDC physically displaces ions solely in the axial (inter end-cap) dimension whereupon ion acceleration occurs via power absorption from the drive rf. Experimental data shows that the degree of rf-heating in a stretched 3-D ion trap is not dependent solely on the ratio of the dipolar DC voltage/radio frequency (rf) amplitude, as a model based on a pure quadrupole field suggests. Rather, ion temperatures are shown to increase as the absolute values of the dipolar DC and rf amplitude both decrease. Simulations indicate that the presence of higher order multi-pole fields underlies this unexpected behavior. These findings have important implications for the use of DDC as a broad-band activation approach in multi-pole traps.

Integrating Nano-patterned Ferromagnetic and Ferroelectric Thin Films for Electrically Tunable RF Applications

DOE PAGES

Wang, Tengxing; Peng, Yujia; Jiang, Wei; ...

2016-10-31

Tunable radio frequency (RF) components are pivotal elements in frequency-agile and multifunctional systems. However, there is a technical barrier to achieve miniaturized fully electrically tunable RF components. This paper provides and demonstrates the efficacy of a first unique design methodology in developing fully electrically tunable RF components by integrating ferromagnetic (e.g., Permalloy) and ferroelectric (e.g., Lead Zirconate Titanate: PZT) thin films patterns. Permalloy thin film has been patterned in nanometer scale to improve its ferromagnetic resonance frequency (FMR) for RF applications. Tunable inductors are developed with the utilization of different thickness of Permalloy thin film, which show over 50% incrementmore » in inductance and over 4% in tunability with DC current. More tunability can be achieved with multiple layers of Permalloy thin film and optimized thickness. A fully electrically tunable slow wave RF transmission line with simultaneously variable inductance and capacitance density has been implemented and thoroughly investigated for the first time. Measured results show that a fixed phase shift of 90° can be achieved from 1.5 GHz to 1.85 GHz continuously by applying external DC current from 0 to 200 mA and external DC voltage from 0 to 15 Volts, respectively.« less

Method and apparatus for controlling electrode gap during vacuum consumable arc remelting

DOEpatents

Fisher, R.W.; Maroone, J.P.; Tipping, D.W.; Zanner, F.J.

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Drop short control of electrode gap

DOEpatents

Fisher, Robert W.; Maroone, James P.; Tipping, Donald W.; Zanner, Frank J.

1986-01-01

During vacuum consumable arc remelting the electrode gap between a consumable electrode and a pool of molten metal is difficult to control. The present invention monitors drop shorts by detecting a decrease in the voltage between the consumable electrode and molten pool. The drop shorts and their associated voltage reductions occur as repetitive pulses which are closely correlated to the electrode gap. Thus, the method and apparatus of the present invention controls electrode gap based upon drop shorts detected from the monitored anode-cathode voltage. The number of drop shorts are accumulated, and each time the number of drop shorts reach a predetermined number, the average period between drop shorts is calculated from this predetermined number and the time in which this number is accumulated. This average drop short period is used in a drop short period electrode gap model which determines the actual electrode gap from the drop short. The actual electrode gap is then compared with a desired electrode gap which is selected to produce optimum operating conditions and the velocity of the consumable error is varied based upon the gap error. The consumable electrode is driven according to any prior art system at this velocity. In the preferred embodiment, a microprocessor system is utilized to perform the necessary calculations and further to monitor the duration of each drop short. If any drop short exceeds a preset duration period, the consumable electrode is rapidly retracted a predetermined distance to prevent bonding of the consumable electrode to the molten remelt.

Ex vivo mouse brain microscopy at 15T with loop-gap RF coil.

PubMed

Cohen, Ouri; Ackerman, Jerome L

2018-04-18

The design of a loop-gap-resonator RF coil optimized for ex vivo mouse brain microscopy at ultra high fields is described and its properties characterized using simulations, phantoms and experimental scans of mouse brains fixed in 10% formalin containing 4 mM Magnevist™. The RF (B 1 ) and magnetic field (B 0 ) homogeneities are experimentally quantified and compared to electromagnetic simulations of the coil. The coil's performance is also compared to a similarly sized surface coil and found to yield double the sensitivity. A three-dimensional gradient-echo (GRE) sequence is used to acquire high resolution mouse brain scans at (47 μm) 3 resolution in 1.8 h and a 20 × 20 × 19 μm 3 resolution in 27 h. The high resolution obtained permitted clear visualization and identification of multiple structures in the ex vivo mouse brain and represents, to our knowledge, the highest resolution ever achieved for a whole mouse brain. Importantly, the coil design is simple and easy to construct. Copyright © 2018 Elsevier Inc. All rights reserved.

FAST TRACK COMMUNICATION: Asymmetric surface barrier discharge plasma driven by pulsed 13.56 MHz power in atmospheric pressure air

NASA Astrophysics Data System (ADS)

Dedrick, J.; Boswell, R. W.; Charles, C.

2010-09-01

Barrier discharges are a proven method of generating plasmas at high pressures, having applications in industrial processing, materials science and aerodynamics. In this paper, we present new measurements of an asymmetric surface barrier discharge plasma driven by pulsed radio frequency (rf 13.56 MHz) power in atmospheric pressure air. The voltage, current and optical emission of the discharge are measured temporally using 2.4 kVp-p (peak to peak) 13.56 MHz rf pulses, 20 µs in duration. The results exhibit different characteristics to plasma actuators, which have similar discharge geometry but are typically driven at frequencies of up to about 10 kHz. However, the electrical measurements are similar to some other atmospheric pressure, rf capacitively coupled discharge systems with symmetric electrode configurations and different feed gases.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

Interrupting an Imminent Body Current Fault and Restoring Full Power in Milliseconds on a DIII-D National Fusion Facility Gyrotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ponce, Dan; Brambila, Rigo E.; Cengher, Mirela

The ECH Group at DIII-D has installed in-house engineered, FPGA-based, high voltage reference waveform generators on its gyrotron control systems to enhance the capabilities of the systems and replace obsolete equipment. The new hardware, named D-Wavegen, outputs 16-bit signals every microsecond and can respond to events and anomalies in real-time. These generators have been reliably pausing gyrotron rf output during periods of DIII-D plasma density that exceed the fault density trip level and restarting the rf output if the density falls below the trip level. While tightly monitoring gyrotron body current and internal pressure, D-Wavegen has also been reliably restarting,more » in a little over 10ms, gyrotrons that spontaneously ceased rf generation.« less

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

PubMed Central

Khaira, Navjot

2014-01-01

This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port. PMID:24711730

Interrupting an Imminent Body Current Fault and Restoring Full Power in Milliseconds on a DIII-D National Fusion Facility Gyrotron

DOE PAGES

Ponce, Dan; Brambila, Rigo E.; Cengher, Mirela; ...

2017-10-19

The ECH Group at DIII-D has installed in-house engineered, FPGA-based, high voltage reference waveform generators on its gyrotron control systems to enhance the capabilities of the systems and replace obsolete equipment. The new hardware, named D-Wavegen, outputs 16-bit signals every microsecond and can respond to events and anomalies in real-time. These generators have been reliably pausing gyrotron rf output during periods of DIII-D plasma density that exceed the fault density trip level and restarting the rf output if the density falls below the trip level. While tightly monitoring gyrotron body current and internal pressure, D-Wavegen has also been reliably restarting,more » in a little over 10ms, gyrotrons that spontaneously ceased rf generation.« less

Electron beam gun with kinematic coupling for high power RF vacuum devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borchard, Philipp

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composedmore » of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.« less

High gradient tests of metallic mm-wave accelerating structures

DOE PAGES

Dal Forno, Massimo; Dolgashev, Valery; Bowden, Gordon; ...

2017-05-10

This study explores the physics of vacuum rf breakdowns in high gradient mm-wave accelerating structures. We performed a series of experiments with 100 GHz and 200 GHz metallic accelerating structures, at the Facility for Advanced Accelerator Experimental Tests (FACET) at the SLAC National Accelerator Laboratory. This paper presents the experimental results of rf tests of 100 GHz travelling-wave accelerating structures, made of hard copper-silver alloy. The results are compared with pure hard copper structures. The rf fields were excited by the FACET ultra-relativistic electron beam. The accelerating structures have open geometries, 10 cm long, composed of two halves separated bymore » a variable gap. The rf frequency of the fundamental accelerating mode depends on the gap size and can be changed from 90 GHz to 140 GHz. The measured frequency and pulse length are consistent with our simulations. When the beam travels off-axis, a deflecting field is induced in addition to the decelerating longitudinal field. We measured the deflecting forces by observing the displacement of the electron bunch and used this measurement to verify the expected accelerating gradient. We present the first quantitative measurement of rf breakdown rates in 100 GHz copper-silver accelerating structure, which was 10 –3 per pulse, with peak electric field of 0.42 GV/m, an accelerating gradient of 127 MV/m, at a pulse length of 2.3 ns. The goal of our studies is to understand the physics of gradient limitations in order to increase the energy reach of future accelerators.« less

High gradient tests of metallic mm-wave accelerating structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dal Forno, Massimo; Dolgashev, Valery; Bowden, Gordon

This study explores the physics of vacuum rf breakdowns in high gradient mm-wave accelerating structures. We performed a series of experiments with 100 GHz and 200 GHz metallic accelerating structures, at the Facility for Advanced Accelerator Experimental Tests (FACET) at the SLAC National Accelerator Laboratory. This paper presents the experimental results of rf tests of 100 GHz travelling-wave accelerating structures, made of hard copper-silver alloy. The results are compared with pure hard copper structures. The rf fields were excited by the FACET ultra-relativistic electron beam. The accelerating structures have open geometries, 10 cm long, composed of two halves separated bymore » a variable gap. The rf frequency of the fundamental accelerating mode depends on the gap size and can be changed from 90 GHz to 140 GHz. The measured frequency and pulse length are consistent with our simulations. When the beam travels off-axis, a deflecting field is induced in addition to the decelerating longitudinal field. We measured the deflecting forces by observing the displacement of the electron bunch and used this measurement to verify the expected accelerating gradient. We present the first quantitative measurement of rf breakdown rates in 100 GHz copper-silver accelerating structure, which was 10 –3 per pulse, with peak electric field of 0.42 GV/m, an accelerating gradient of 127 MV/m, at a pulse length of 2.3 ns. The goal of our studies is to understand the physics of gradient limitations in order to increase the energy reach of future accelerators.« less

A novel injection-locked amplitude-modulated magnetron at 1497 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neubauer, Michael; Wang, Haipeng

2015-12-15

Thomas Jefferson National Accelerator Facility (JLab) uses low efficiency klystrons in the CEBAF machine. In the older portion they operate at 30% efficiency with a tube mean time between failure (MTBF) of five to six years. A highly efficient source (>55-60%) must provide a high degree of backwards compatibility, both in size and voltage requirements, to replace the klystron presently used at JLab, while providing energy savings. Muons, Inc. is developing a highly reliable, highly efficient RF source based upon a novel injection-locked amplitude modulated (AM) magnetron with a lower total cost of ownership, >80% efficiency, and MTBF of sixmore » to seven years. The design of the RF source is based upon a single injection-locked magnetron system at 8 kW capable of operating up to 13 kW, using the magnetron magnetic field to achieve the AM required for backwards compatibility to compensate for microphonics and beam loads. A novel injection-locked 1497 MHz 8 kW AM magnetron with a trim magnetic coil was designed and its operation numerically simulated during the Phase I project. The low-level RF system to control the trim field and magnetron anode voltage was designed and modeled for operation at the modulation frequencies of the microphonics. A plan for constructing a prototype magnetron and control system was developed.« less

Radio-frequency-assisted current startup in the fusion engineering device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S. K.; Peng, Yueng Kay Martin; Kammash, T.

1984-01-01

Auxiliary radio-frequency (RF) heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device (FED) (R{sub 0} = 4.8 m, a = 1.3 m, sigma = 1.6, B(R{sub 0}) = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at about90 GHz is used to create a small volume of high conductivity plasma (T {sub e} approx. = 100 eV, n {sub e} approx. = 10{supmore » 19} m{sup -3}) near the upper hybrid resonance (UHR) region. This plasma conditioning, referred to as preheating, permits a small radius (a{sub 0} approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to about 100 V without rf assist). During the subsequent plasma expansion and current rise phase, a combination of rf heating (up to 5 MW) and linear current ramping leads to a substantial savings in voltseconds by (a) minimizing the resistive flux consumption and (b) producing broad current density profiles. (With such broad profiles, the internal flux requirements are maintained at or near the flat profile limit.)« less

Radio-frequency-assisted current startup in the Fusion Engineering Device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Kammash, T.; Martin Peng, Y.K.

1984-07-01

Auxiliary radio-frequency (RF) heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device (FED) (R/sub 0/ = 4.8 m, a = 1.3 m, sigma = 1.6, B(R/sub 0/) = 3.62 T), is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at about90 GHz is used to create a small volume of high conductivity plasma (T /sub e/ approx. = 100 eV, n /sub e/ approx. = 10/supmore » 19/ m/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning, referred to as preheating, permits a small radius (a/sub 0/ approx. = 0.2 to 0.4 m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V as opposed to about 100 V without rf assist). During the subsequent plasma expansion and current rise phase, a combination of rf heating (up to 5 MW) and linear current ramping leads to a substantial savings in voltseconds by (a) minimizing the resistive flux consumption and (b) producing broad current density profiles. (With such broad profiles, the internal flux requirements are maintained at or near the flat profile limit.)« less

Development of a high-power solid-state switch using static induction thyristors for a klystron modulator

NASA Astrophysics Data System (ADS)

Tokuchi, Akira; Kamitsukasa, Fumiyoshi; Furukawa, Kazuya; Kawase, Keigo; Kato, Ryukou; Irizawa, Akinori; Fujimoto, Masaki; Osumi, Hiroki; Funakoshi, Sousuke; Tsutsumi, Ryouta; Suemine, Shoji; Honda, Yoshihide; Isoyama, Goro

2015-01-01

We developed a solid-state switch with static induction thyristors for the klystron modulator of the L-band electron linear accelerator (linac) at the Institute of Scientific and Industrial Research, Osaka University. This switch is designed to have maximum specifications of a holding voltage of 25 kV and a current of 6 kA at the repetition frequency of 10 Hz for forced air cooling. The turn-on time of the switch was measured with a matched resistor to be 270 ns, which is sufficiently fast for the klystron modulator. The switch is retrofitted in the modulator to generate 1.3 GHz RF pulses with durations of either 4 or 8 μs using a 30 MW klystron, and the linac is successfully operated under maximum conditions. This finding demonstrates that the switch can be used as a high-power switch for the modulator. Pulse-to-pulse variations of the klystron voltage are measured to be less than 0.015%, and those of RF power and phase are lower than 0.15% and 0.1°, respectively. These values are significantly smaller than those obtained with a thyratron; hence, the stability of the main RF system is improved. The solid-state switch has been used in normal operation of the linac for more than a year without any serious trouble. Thus, we confirmed the switch's robustness and long-term reliability.

Compact microwave ion source for industrial applications.

PubMed

Cho, Yong-Sub; Kim, Dae-Il; Kim, Han-Sung; Seol, Kyung-Tae; Kwon, Hyeok-Jung; Hong, In-Seok

2012-02-01

A 2.45 GHz microwave ion source for ion implanters has many good properties for industrial application, such as easy maintenance and long lifetime, and it should be compact for budget and space. But, it has a dc current supply for the solenoid and a rf generator for plasma generation. Usually, they are located on high voltage platform because they are electrically connected with beam extraction power supply. Using permanent magnet solenoid and multi-layer dc break, high voltage deck and high voltage isolation transformer can be eliminated, and the dose rate on targets can be controlled by pulse duty control with semiconductor high voltage switch. Because the beam optics does not change, beam transfer components, such as focusing elements and beam shutter, can be eliminated. It has shown the good performances in budget and space for industrial applications of ion beams.

Evaluation of beam divergence of a negative hydrogen ion beam using Doppler shift spectroscopy diagnostics

NASA Astrophysics Data System (ADS)

Deka, A. J.; Bharathi, P.; Pandya, K.; Bandyopadhyay, M.; Bhuyan, M.; Yadav, R. K.; Tyagi, H.; Gahlaut, A.; Chakraborty, A.

2018-01-01

The Doppler Shift Spectroscopy (DSS) diagnostic is in the conceptual stage to estimate beam divergence, stripping losses, and beam uniformity of the 100 keV hydrogen Diagnostics Neutral Beam of International Thermonuclear Experimental Reactor. This DSS diagnostic is used to measure the above-mentioned parameters with an error of less than 10%. To aid the design calculations and to establish a methodology for estimation of the beam divergence, DSS measurements were carried out on the existing prototype ion source RF Operated Beam Source in India for Negative ion Research. Emissions of the fast-excited neutrals that are generated from the extracted negative ions were collected in the target tank, and the line broadening of these emissions were used for estimating beam divergence. The observed broadening is a convolution of broadenings due to beam divergence, collection optics, voltage ripple, beam focusing, and instrumental broadening. Hence, for estimating the beam divergence from the observed line broadening, a systematic line profile analysis was performed. To minimize the error in the divergence measurements, a study on error propagation in the beam divergence measurements was carried out and the error was estimated. The measurements of beam divergence were done at a constant RF power of 50 kW and a source pressure of 0.6 Pa by varying the extraction voltage from 4 kV to10 kV and the acceleration voltage from 10 kV to 15 kV. These measurements were then compared with the calorimetric divergence, and the results seemed to agree within 10%. A minimum beam divergence of ˜3° was obtained when the source was operated at an extraction voltage of ˜5 kV and at a ˜10 kV acceleration voltage, i.e., at a total applied voltage of 15 kV. This is in agreement with the values reported in experiments carried out on similar sources elsewhere.

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Formation of 1.4 MeV runaway electron flows in air using a solid-state generator with 10 MV/ns voltage rise rate

NASA Astrophysics Data System (ADS)

Mesyats, G. A.; Pedos, M. S.; Rukin, S. N.; Rostov, V. V.; Romanchenko, I. V.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Ul'masculov, M. R.; Yalandin, M. I.

2018-04-01

Fulfillment of the condition that the voltage rise time across an air gap is comparable with the time of electron acceleration from a cathode to an anode allows a flow of runaway electrons (REs) to be formed with relativistic energies approaching that determined by the amplitude of the voltage pulse. In the experiment described here, an RE energy of 1.4 MeV was observed by applying a negative travelling voltage pulse of 860-kV with a maximum rise rate of 10 MV/ns and a rise time of 100-ps. The voltage pulse amplitude was doubled at the cathode of the 2-cm-long air gap due to the delay of conventional pulsed breakdown. The above-mentioned record-breaking voltage pulse of ˜120 ps duration with a peak power of 15 GW was produced by an all-solid-state pulsed power source utilising pulse compression/sharpening in a multistage gyromagnetic nonlinear transmission line.

Developing a pulse trigger generator for a three-electrode spark-gap switch in a transversely excited atmospheric CO2 laser.

PubMed

Wang, Jingyuan; Guo, Lihong; Zhang, Xingliang

2016-04-01

To improve the probability and stability of breakdown discharge in a three-electrode spark-gap switch for a high-power transversely excited atmospheric CO2 laser and to improve the efficiency of its trigger system, we developed a high-voltage pulse trigger generator based on a two-transistor forward converter topology and a multiple-narrow-pulse trigger method. Our design uses a narrow high-voltage pulse (10 μs) to break down the hyperbaric gas between electrodes of the spark-gap switch; a dry high-voltage transformer is used as a booster; and a sampling and feedback control circuit (mainly consisting of a SG3525 and a CD4098) is designed to monitor the spark-gap switch and control the frequency and the number of output pulses. Our experimental results show that this pulse trigger generator could output high-voltage pulses (number is adjusted) with an amplitude of >38 kV and a width of 10 μs. Compared to a conventional trigger system, our design had a breakdown probability increased by 2.7%, an input power reduced by 1.5 kW, an efficiency increased by 0.12, and a loss reduced by 1.512 kW.

Investigation of Dielectric Breakdown Characteristics for Double-break Vacuum Interrupter and Dielectric Breakdown Probability Distribution in Vacuum Interrupter

NASA Astrophysics Data System (ADS)

Shioiri, Tetsu; Asari, Naoki; Sato, Junichi; Sasage, Kosuke; Yokokura, Kunio; Homma, Mitsutaka; Suzuki, Katsumi

To investigate the reliability of equipment of vacuum insulation, a study was carried out to clarify breakdown probability distributions in vacuum gap. Further, a double-break vacuum circuit breaker was investigated for breakdown probability distribution. The test results show that the breakdown probability distribution of the vacuum gap can be represented by a Weibull distribution using a location parameter, which shows the voltage that permits a zero breakdown probability. The location parameter obtained from Weibull plot depends on electrode area. The shape parameter obtained from Weibull plot of vacuum gap was 10∼14, and is constant irrespective non-uniform field factor. The breakdown probability distribution after no-load switching can be represented by Weibull distribution using a location parameter. The shape parameter after no-load switching was 6∼8.5, and is constant, irrespective of gap length. This indicates that the scatter of breakdown voltage was increased by no-load switching. If the vacuum circuit breaker uses a double break, breakdown probability at low voltage becomes lower than single-break probability. Although potential distribution is a concern in the double-break vacuum cuicuit breaker, its insulation reliability is better than that of the single-break vacuum interrupter even if the bias of the vacuum interrupter's sharing voltage is taken into account.

An equivalent circuit for small atrial trabeculae of frog.

PubMed Central

Jakobsson, E; Barr, L; Connor, J A

1975-01-01

An equivalent electrical circuit has been constructed for small atrial trabecula of frog in a double sucrose gap voltage clamp apparatus. The basic strategy in constructing the circuit was to derive the distribution of membrane capacitance and extracellular resistance from the preparation's response to small voltage displacements near the resting condition, when the membrane conductance is presumably quite low. Then standard Hodgkin-Huxley channels were placed in parallel with the capacitance and the results of voltage clamp experiments were simulated. The results suggest that the membranes of the preparation cannot in fact be clamped near the control voltage nor can the ionic currents be measured directly with reasonable accuracy by axon standards. It may or may not be a realizable goal in the future to define the preparation's electrical behavior well enough to permit the ultimate quantitative description of the membrane's specific ion conductances. The result of this paper suggest that if this goal is achieved using the double sucrose gap voltage clamp, it will be by a detailed quantitative accounting for substantial irreducible errors in voltage control, rather than by experimental achievement of good voltage control. PMID:1203441

Back-streaming ion beam measurements in a Self Magnetic Insulated (SMP) electron diode

NASA Astrophysics Data System (ADS)

Mazarakis, Michael; Johnston, Mark; Kiefer, Mark; Leckbee, Josh; Webb, Timothy; Bennett, Nichelle; Droemer, Darryl; Welch, Dale; Nielsen, Dan; Ziska, Derek; Wilkins, Frank; Advance radiography department Team

2014-10-01

A self-magnetic pinch diode (SMP) is presently the electron diode of choice for high energy flash x-ray radiography utilizing pulsed power drivers. The Sandia National Laboratories RITS accelerator is presently fit with an SMP diode that generates very small electron beam spots. RITS is a Self-Magnetically Insulated Transmission Line (MITL) voltage adder that adds the voltage pulse of six 1.3 MV inductively insulated cavities. The diode's anode is made of high Z metal in order to produce copious and energetic flash x-rays for radiographic imaging of high areal density objects. In any high voltage inductive voltage adder (IVA) utilizing MITLs to transmit the power to the diode load, the precise knowledge of the accelerating voltage applied on the anode-cathode (A-K) gap is problematic. This is even more difficult in an SMP diode where the A-K gap is very small (~1 cm) and the diode region very hostile. We are currently measuring the back-streaming ion currents emitted from the anode and propagating through a hollow cathode tip. We then are evaluating the A-K gap voltage by ion time of flight measurements supplemented with filtered Rogowski coils. Sandia is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under Contract No. DE- AC04-94AL850.

Investigation of atmospheric pressure glow microdischarge between flat cathode and needle anode in helium and argon

NASA Astrophysics Data System (ADS)

Astafiev, Alexander; Belyaev, Vladimir; Zamchii, Roman; Kudryavtsev, Anatoly; Stepanova, Olga; Chen, Zhaoquan

2016-09-01

DC atmospheric-pressure glow microdischarge was generated between a flat cathode and needle anode with a diameter of 100 μm in a special chamber with helium or argon. Dependences of discharge parameters on an interelectrode gap was investigated with an original experimental setup based on a movable arm on the hinge joint which allowed changing the gap with a step of 5 μm. The gap was varied from 5 to 700 μm. Discharge current was 1-21 mA. Such discharge cell has a very low interelectrode capacitance and provides increasing the stability of the discharge against arc formation (transition to RC oscillations mode) at low currents of 1 mA. A weak dependence of discharge voltage across the gap was revealed in helium at 100-250 μm between the electrodes (normal discharge). In contrast to this, glow microdischarge in argon has a descending current-voltage characteristic and unstable nature. The discharge voltage depending on the gap changes significantly slower than in helium. According to our estimations, the strength of electrical field of positive glow in argon is 5 times lower than in helium. Saint Petersburg State University (Grant No. 0.37.218.2016).

Mode control in a high-gain relativistic klystron amplifier

NASA Astrophysics Data System (ADS)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

Experimental studies of the overshoot and undershoot in pulse-modulated radio-frequency atmospheric discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huo, W. G.; Li, R. M.; Shi, J. J.

The overshoot and undershoot of the applied voltage on the electrodes, the discharge current, and radio frequency (RF) power were observed at the initial phase of pulse-modulated (PM) RF atmospheric pressure discharges, but factors influencing the overshoot and undershoot have not been fully elucidated. In this paper, the experimental studies were performed to seek the reasons for the overshoot and undershoot. The experimental results show that the overshoot and undershoot are associated with the pulse frequency, the rise time of pulse signal, and the series capacitor C{sub s} in the inversely L-shaped matching network. In the case of a highmore » RF power discharge, these overshoot and undershoot become serious when shortening the rise time of a pulse signal (5 ns) or operating at a moderate pulse frequency (500 Hz or 1 kHz).« less

Spin-torque resonant expulsion of the vortex core for an efficient radiofrequency detection scheme.

PubMed

Jenkins, A S; Lebrun, R; Grimaldi, E; Tsunegi, S; Bortolotti, P; Kubota, H; Yakushiji, K; Fukushima, A; de Loubens, G; Klein, O; Yuasa, S; Cros, V

2016-04-01

It has been proposed that high-frequency detectors based on the so-called spin-torque diode effect in spin transfer oscillators could eventually replace conventional Schottky diodes due to their nanoscale size, frequency tunability and large output sensitivity. Although a promising candidate for information and communications technology applications, the output voltage generated from this effect has still to be improved and, more pertinently, reduces drastically with decreasing radiofrequency (RF) current. Here we present a scheme for a new type of spintronics-based high-frequency detector based on the expulsion of the vortex core in a magnetic tunnel junction (MTJ). The resonant expulsion of the core leads to a large and sharp change in resistance associated with the difference in magnetoresistance between the vortex ground state and the final C-state configuration. Interestingly, this reversible effect is independent of the incoming RF current amplitude, offering a fast real-time RF threshold detector.

High-power microstrip RF switch

NASA Technical Reports Server (NTRS)

Choi, S. D.

1971-01-01

A microstrip-type single-pole double-throw (SPDT) switch whose RF and bias portions contain only a metallized alumina substrate and two PIN diodes has been developed. A technique developed to eliminate the dc blocking capacitors needed for biasing the diodes is described. These capacitors are extra components and could lower the reliability significantly. An SPDT switch fabricated on a 5.08 x 5.08 x 0.127-cm (2 x 2 x 0.050-in.) substrate has demonstrated an RF power-handling capability greater than 50 W at S-band. The insertion loss is less than 0.25 db and the input-to-off port isolation is greater than 36 db over a bandwidth larger than 30 MHz. The input voltage standing-wave ratio is lower than 1.07 over the same bandwidth. Theoretical development of the switch characteristics and experimental results, which are in good agreement with theory, are presented.

Spin-Flipping Polarized Deuterons At COSY

NASA Astrophysics Data System (ADS)

Yonehara, K.; Krisch, A. D.; Morozov, V. S.; Raymond, R. S.; Wong, V. K.; Bechstedt, U.; Gebel, R.; Lehrach, A.; Lorenz, B.; Maier, R.; Prasuhn, D.; Schnase, A.; Stockhorst, H.; Eversheim, D.; Hinterberger, F.; Rohdjess, H.; Ulbrich, K.; Scobel, W.

2004-02-01

We recently stored a 1.85 GeV/c vertically polarized deuteron beam in the COSY Ring in Jülich; we then spin-flipped it by ramping a new air-core rf dipole's frequency through an rf-induced spin resonance to manipulate the polarization direction of the deuteron beam. We first experimentally determined the resonance's frequency and set the dipole's rf voltage to its maximum; then we varied its frequency ramp time and frequency range. We used the EDDA detector to measure the vector and tensor polarization asymmetries. We have not yet extracted the deuteron's tensor polarization spin-flip parameters from the measured data, since our short run did not provide adequate tensor analyzing-power data at 1.85 GeV/c. However, with a 100 Hz frequency ramp and our longest ramp time of 400 s, the deuterons' vector polarization spin-flip efficiency was 48±1%.

Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

NASA Astrophysics Data System (ADS)

Chakraborty, Avik; Sarkar, Angsuman

2015-04-01

In this paper, the analog/RF performance of an III-V semiconductor based staggered hetero-tunnel-junction (HETJ) n-type nanowire (NW) tunneling FET (n-TFET) is investigated, for the first time. The device performance figure-of-merits governing the analog/RF performance such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), output resistance (Rout), intrinsic gain and unity-gain cutoff frequency (fT) have been studied. The analog/RF performance parameters is compared between HETJ NW TFET and a homojunction (HJ) NW n-type TFET of similar dimensions. In addition to enhanced ION and subthreshold swing, a significant improvement in the analog/RF performance parameters obtained by the HETJ n-TFET over HJ counterpart for use in analog/mixed signal System-on-Chip (SoC) applications is reported. Moreover, the analog/RF performance parameters of a III-V based staggered HETJ NW TFET is also compared with a heterojunction (HETJ) NW n-type MOSFET having same material as HETJ n-TFET and equal dimension in order to provide a systematic comparison between HETJ-TFET and HETJ-MOSFET for use in analog/mixed-signal applications. The results reveal that HETJ n-TFET provides higher Rout and hence, a higher intrinsic gain, an improved gm/IDS ratio, and reasonable fT at lower values of gate-overdrive voltage as compared to the HETJ NW n-MOSFET.

Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz.

PubMed

Hornstein, Melissa K; Bajaj, Vikram S; Griffin, Robert G; Temkin, Richard J

2007-02-01

The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE(2) (,) (3) (,) (1) mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents.

Efficient Low-Voltage Operation of a CW Gyrotron Oscillator at 233 GHz

PubMed Central

Hornstein, Melissa K.; Bajaj, Vikram S.; Griffin, Robert G.; Temkin, Richard J.

2007-01-01

The gyrotron oscillator is a source of high average power millimeter-wave through terahertz radiation. In this paper, we report low beam power and high-efficiency operation of a tunable gyrotron oscillator at 233 GHz. The low-voltage operating mode provides a path to further miniaturization of the gyrotron through reduction in the size of the electron gun, power supply, collector, and cooling system, which will benefit industrial and scientific applications requiring portability. Detailed studies of low-voltage operation in the TE2,3,1 mode reveal that the mode can be excited with less than 7 W of beam power at 3.5 kV. During CW operation with 3.5-kV beam voltage and 50-mA beam current, the gyrotron generates 12 W of RF power at 233.2 GHz. The EGUN electron optics code describes the low-voltage operation of the electron gun. Using gun-operating parameters derived from EGUN simulations, we show that a linear theory adequately predicts the low experimental starting currents. PMID:17687412

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

BPM Breakdown Potential in the PEP-II B-factory Storage Ring Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weathersby, Stephen; Novokhatski, Alexander; /SLAC

2010-02-10

High current B-Factory BPM designs incorporate a button type electrode which introduces a small gap between the button and the beam chamber. For achievable currents and bunch lengths, simulations indicate that electric potentials can be induced in this gap which are comparable to the breakdown voltage. This study characterizes beam induced voltages in the existing PEP-II storage ring collider BPM as a function of bunch length and beam current.

HIGH VOLTAGE, HIGH CURRENT SPARK GAP SWITCH

DOEpatents

Dike, R.S.; Lier, D.W.; Schofield, A.E.; Tuck, J.L.

1962-04-17

A high voltage and current spark gap switch comprising two main electrodes insulatingly supported in opposed spaced relationship and a middle electrode supported medially between the main electrodes and symmetrically about the median line of the main electrodes is described. The middle electrode has a perforation aligned with the median line and an irradiation electrode insulatingly supported in the body of the middle electrode normal to the median line and protruding into the perforation. (AEC)

The smooth transition from field emission to a self-sustained plasma in microscale electrode gaps at atmospheric pressure

NASA Astrophysics Data System (ADS)

Bilici, Mihai A.; Haase, John R.; Boyle, Calvin R.; Go, David B.; Sankaran, R. Mohan

2016-06-01

We report on the existence of a smooth transition from field emission to a self-sustained plasma in microscale electrode geometries at atmospheric pressure. This behavior, which is not found at macroscopic scales or low pressures, arises from the unique combination of large electric fields that are created in microscale dimensions to produce field-emitted electrons and the high pressures that lead to collisional ionization of the gas. Using a tip-to-plane electrode geometry, currents less than 10 μA are measured at onset voltages of ˜200 V for gaps less than 5 μm, and analysis of the current-voltage (I-V) relationship is found to follow Fowler-Nordheim behavior, confirming field emission. As the applied voltage is increased, gas breakdown occurs smoothly, initially resulting in the formation of a weak, partial-like glow and then a self-sustained glow discharge. Remarkably, this transition is essentially reversible, as no significant hysteresis is observed during forward and reverse voltage sweeps. In contrast, at larger electrode gaps, no field emission current is measured and gas breakdown occurs abruptly at higher voltages of ˜400 V, absent of any smooth transition from the pre-breakdown condition and is characterized only by glow discharge formation.

Research of an electromagnetically actuated spark gap switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Tianyang; Chen, Dongqun, E-mail: csycdq@163.com; Liu, Jinliang

2013-11-15

As an important part of pulsed power systems, high-voltage and high-current triggered spark gap switch and its trigger system are expected to achieve a compact structure. In this paper, a high-voltage, high-current, and compact electromagnetically actuated spark gap switch is put forward, and it can be applied as a part of an intense electron-beam accelerator (IEBA). A 24 V DC power supply is used to trigger the switch. The characteristics of the switch were measured for N{sub 2} when the gas pressure is 0.10–0.30 MPa. The experimental results showed that the voltage/pressure (V/p) curve of the switch was linear relationship.more » The operating ranges of the switch were 21%–96%, 21%–95%, 21%–95%, 19%–95%, 17%–95%, and 16%–96% of the switch's self-breakdown voltage when the gas pressures were 0.10, 0.14, 0.18, 0.22, 0.26, and 0.30 MPa, respectively. The switch and its trigger system worked steadily and reliably with a peak voltage of 30 kV, a peak current of 60 kA in the IEBA when the pressure of N{sub 2} in the switch was 0.30 MPa.« less

RF pulse shape control in the compact linear collider test facility

NASA Astrophysics Data System (ADS)

Kononenko, Oleksiy; Corsini, Roberto

2018-07-01

The Compact Linear Collider (CLIC) is a study for an electron-positron machine aiming at accelerating and colliding particles at the next energy frontier. The CLIC concept is based on the novel two-beam acceleration scheme, where a high-current low-energy drive beam generates RF in series of power extraction and transfer structures accelerating the low-current main beam. To compensate for the transient beam-loading and meet the energy spread specification requirements for the main linac, the RF pulse shape must be carefully optimized. This was recently modelled by varying the drive beam phase switch times in the sub-harmonic buncher so that, when combined, the drive beam modulation translates into the required voltage modulation of the accelerating pulse. In this paper, the control over the RF pulse shape with the phase switches, that is crucial for the success of the developed compensation model, is studied. The results on the experimental verification of this control method are presented and a good agreement with the numerical predictions is demonstrated. Implications for the CLIC beam-loading compensation model are also discussed.

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

NASA Astrophysics Data System (ADS)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

NASA Astrophysics Data System (ADS)

Park, M. G.; Choi, W. S.; Hong, B.; Kim, Y. T.; Yoon, D. H.

2002-05-01

In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (Ta) and radio frequency (rf) power. The substrate temperature (Ts) was 250 °C, the rf power was varied from 30 to 400 W, and the range of Ta was from 400 to 600 °C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH4+CH4 gas mixture. The experimental results have shown that the optical bandgap energy (Eg) of the a-SiC:H thin films changed little on the annealing temperature while Eg increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

Radio frequency focused interdigital linear accelerator

DOEpatents

Swenson, Donald A.; Starling, W. Joel

2006-08-29

An interdigital (Wideroe) linear accelerator employing drift tubes, and associated support stems that couple to both the longitudinal and support stem electromagnetic fields of the linac, creating rf quadrupole fields along the axis of the linac to provide transverse focusing for the particle beam. Each drift tube comprises two separate electrodes operating at different electrical potentials as determined by cavity rf fields. Each electrode supports two fingers, pointing towards the opposite end of the drift tube, forming a four-finger geometry that produces an rf quadrupole field distribution along its axis. The fundamental periodicity of the structure is equal to one half of the particle wavelength .beta..lamda., where .beta. is the particle velocity in units of the velocity of light and .lamda. is the free space wavelength of the rf. Particles are accelerated in the gaps between drift tubes. The particle beam is focused in regions inside the drift tubes.

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mett, R. R.; Department of Physics and Chemistry, Milwaukee School of Engineering, Milwaukee, Wisconsin 53202; Sidabras, J. W.

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approachesmore » the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz.« less

Meta-metallic coils and resonators: Methods for high Q-value resonant geometries

PubMed Central

Mett, R. R.; Hyde, J. S.

2016-01-01

A novel method of decreasing ohmic losses and increasing Q-value in metallic resonators at high frequencies is presented. The method overcomes the skin-depth limitation of rf current flow cross section. The method uses layers of conductive foil of thickness less than a skin depth and capacitive gaps between layers. The capacitive gaps can substantially equalize the rf current flowing in each layer, resulting in a total cross-sectional dimension for rf current flow many times larger than a skin depth. Analytic theory and finite-element simulations indicate that, for a variety of structures, the Q-value enhancement over a single thick conductor approaches the ratio of total conductor thickness to skin depth if the total number of layers is greater than one-third the square of the ratio of total conductor thickness to skin depth. The layer number requirement is due to counter-currents in each foil layer caused by the surrounding rf magnetic fields. We call structures that exhibit this type of Q-enhancement “meta-metallic.” In addition, end effects due to rf magnetic fields wrapping around the ends of the foils can substantially reduce the Q-value for some classes of structures. Foil structures with Q-values that are substantially influenced by such end effects are discussed as are five classes of structures that are not. We focus particularly on 400 MHz, which is the resonant frequency of protons at 9.4 T. Simulations at 400 MHz are shown with comparison to measurements on fabricated structures. The methods and geometries described here are general for magnetic resonance and can be used at frequencies much higher than 400 MHz. PMID:27587143

Non-Destructive Testing of Semiconductors Using Surface Acoustic Wave.

DTIC Science & Technology

1983-12-31

are thin film A). fingers (1 ;im) alternately connected to bus pads as shown in fig. 1.lb. An RF voltage applied to the transducer creates an...inversion 140 layer sets in (the deep depletion regime). This timing arrangement is not difficult to attain, due to the long minoritv carriler response

Factors that Influence RF Breakdown in Antenna Systems

NASA Astrophysics Data System (ADS)

Caughman, J. B. O.; Baity, F. W.; Rasmussen, D. A.; Aghazarian, M.; Castano Giraldo, C. H.; Ruzic, David

2007-11-01

One of the main power-limiting factors in antenna systems is the maximum voltage that the antenna or vacuum transmission line can sustain before breaking down. The factors that influence RF breakdown are being studied in a resonant 1/4-wavelength section of vacuum transmission line terminated with an open circuit electrode structure. Breakdown can be initiated via electron emission by high electric fields and by plasma formation in the structure, depending on the gas pressure. Recent experiments have shown that a 1 kG magnetic field can influence plasma formation at pressures as low as 8x10-5 Torr at moderate voltage levels (<5 kV). Ultraviolet light, with energies near the work function of the electrode material, can induce a multipactor discharge and limit power transmission. Details of these experimental results, including the effect of electrode materials (Ni and Cu), will be presented. Oak Ridge National Laboratory is managed by UT-Battelle, LLC, for the U.S. Dept. of Energy under contract DE-AC05-00OR22725. Work supported by USDOE with grant DE-FG02-04ER54765

Nonlinear system analysis in bipolar integrated circuits

NASA Astrophysics Data System (ADS)

Fang, T. F.; Whalen, J. J.

1980-01-01

Since analog bipolar integrated circuits (IC's) have become important components in modern communication systems, the study of the Radio Frequency Interference (RFI) effects in bipolar IC amplifiers is an important subject for electromagnetic compatibility (EMC) engineering. The investigation has focused on using the nonlinear circuit analysis program (NCAP) to predict RF demodulation effects in broadband bipolar IC amplifiers. The audio frequency (AF) voltage at the IC amplifier output terminal caused by an amplitude modulated (AM) RF signal at the IC amplifier input terminal was calculated and compared to measured values. Two broadband IC amplifiers were investigated: (1) a cascode circuit using a CA3026 dual differential pair; (2) a unity gain voltage follower circuit using a micro A741 operational amplifier (op amp). Before using NCAP for RFI analysis, the model parameters for each bipolar junction transistor (BJT) in the integrated circuit were determined. Probe measurement techniques, manufacturer's data, and other researcher's data were used to obtain the required NCAP BJT model parameter values. An important contribution included in this effort is a complete set of NCAP BJT model parameters for most of the transistor types used in linear IC's.

An Adaptable Multiple Power Source for Mass Spectrometry and other Scientific Instruments

DOE PAGES

Lin, Tzu-Yung; Anderson, Gordon A.; Norheim, Randolph V.; ...

2015-09-18

Power supplies are commonly used in the operation of many types of scientific equipment, including mass spectrometers and ancillary instrumentation. A generic modern mass spectrometer comprises an ionization source, such as electrospray ionization (ESI), ion transfer devices such as ion funnels and multipole ion guides, and ion signal detection apparatus. Very often such platforms include, or are interfaced with ancillary elements in order to manipulate samples before or after ionization. In order to operate such scientific instruments, numerous direct current (DC) channels and radio frequency (RF) signals are required, along with other controls such as temperature regulation. In particular, DCmore » voltages in the range of ±400 V, along with MHz range RF signals with peak-to-peak amplitudes in the hundreds of volts range are commonly used to transfer ionized samples under vacuum. Additionally, an ESI source requires a high voltage (HV) DC source capable of producing several thousand volts and heaters capable of generating temperatures up to 300°C. All of these signals must be properly synchronized and managed in order to carry out ion trapping, accumulation and detection.« less

A loop-gap resonator for chirality-sensitive nuclear magneto-electric resonance (NMER)

NASA Astrophysics Data System (ADS)

Garbacz, Piotr; Fischer, Peer; Krämer, Steffen

2016-09-01

Direct detection of molecular chirality is practically impossible by methods of standard nuclear magnetic resonance (NMR) that is based on interactions involving magnetic-dipole and magnetic-field operators. However, theoretical studies provide a possible direct probe of chirality by exploiting an enantiomer selective additional coupling involving magnetic-dipole, magnetic-field, and electric field operators. This offers a way for direct experimental detection of chirality by nuclear magneto-electric resonance (NMER). This method uses both resonant magnetic and electric radiofrequency (RF) fields. The weakness of the chiral interaction though requires a large electric RF field and a small transverse RF magnetic field over the sample volume, which is a non-trivial constraint. In this study, we present a detailed study of the NMER concept and a possible experimental realization based on a loop-gap resonator. For this original device, the basic principle and numerical studies as well as fabrication and measurements of the frequency dependence of the scattering parameter are reported. By simulating the NMER spin dynamics for our device and taking the 19F NMER signal of enantiomer-pure 1,1,1-trifluoropropan-2-ol, we predict a chirality induced NMER signal that accounts for 1%-5% of the standard achiral NMR signal.

Study on the characteristics of a two gap capillary discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, D.; Yang, L. J., E-mail: yanglj@mail.xjtu.edu.cn; Huo, P.

2015-02-15

The paper presents a new two-gap capillary (TGC) discharge structure. The prominent innovation is the introduction of the middle electrode, which divides the capillary into the trigger gap and the main gap. The discharge circuit of the TGC comprises the trigger circuit and the main circuit. The two circuits are used for the pre-ionization of the trigger gap and providing energy of 450 J for the main gap arc discharging, respectively. When the discharge initiates, the trigger gap is pre-ionized under high voltage pulse produced by trigger circuit, and meanwhile, the weakly ionized plasma is generated. The main circuit then maintainsmore » the expansion of the plasma, which is called soft capillary discharge. Afterwards, the main gap is shorted and discharges under a relatively low voltage. With the optimization of the circuit parameter, both the energy deposition ratio in main gap and the degree of plasma ionization are enhanced. The efficiency of the energy deposition is almost twice higher compared with that of the conventional capillary structure. The life performance test indicates that the erosion of the middle electrode and the trigger gap carbonization are the key factors that limit the life performance of the TGC.« less

A new approach to high-efficiency multi-band-gap solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barnham, K.W.J.; Duggan, G.

1990-04-01

The advantages of using multi-quantum-well or superlattice systems as the absorbers in concentrator solar cells are discussed. By adjusting the quantum-well width, an effective band-gap variation that covers the high-efficiency region of the solar spectrum can be obtained. Higher efficiencies should result from the ability to optimize separately current and voltage generating factors. Suitable structures to ensure good carrier separation and collection and to obtain higher open-circuit voltages are presented using the (AlGa)As/GaAs/(InGa)As system. Efficiencies above existing single-band-gap limits should be achievable, with upper limits in excess of 40%.

Influence of Wire Electrical Discharge Machining (WEDM) process parameters on surface roughness

NASA Astrophysics Data System (ADS)

Yeakub Ali, Mohammad; Banu, Asfana; Abu Bakar, Mazilah

2018-01-01

In obtaining the best quality of engineering components, the quality of machined parts surface plays an important role. It improves the fatigue strength, wear resistance, and corrosion of workpiece. This paper investigates the effects of wire electrical discharge machining (WEDM) process parameters on surface roughness of stainless steel using distilled water as dielectric fluid and brass wire as tool electrode. The parameters selected are voltage open, wire speed, wire tension, voltage gap, and off time. Empirical model was developed for the estimation of surface roughness. The analysis revealed that off time has a major influence on surface roughness. The optimum machining parameters for minimum surface roughness were found to be at a 10 V open voltage, 2.84 μs off time, 12 m/min wire speed, 6.3 N wire tension, and 54.91 V voltage gap.

Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

NASA Astrophysics Data System (ADS)

Sun, Xu; Gu, Yousong; Wang, Xueqiang

2012-08-01

One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

Catheterized plasma X-ray source

DOEpatents

Derzon, Mark S.; Robinson, Alex; Galambos, Paul C.

2017-06-20

A radiation generator useful for medical applications, among others, is provided. The radiation generator includes a catheter; a plasma discharge chamber situated within a terminal portion of the catheter, a cathode and an anode positioned within the plasma discharge chamber and separated by a gap, and a high-voltage transmission line extensive through the interior of the catheter and terminating on the cathode and anode so as to deliver, in operation, one or more voltage pulses across the gap.

Rf-assisted current startup in the Fusion Engineering Device (FED)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.; Peng, Y.K.M.; Kammash, T.

1982-08-01

Auxiliary rf heating of electrons before and during the current rise phase in the Fusion Engineering Device is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation 1 to 2 MW of electron cyclotron resonance heating (ECRH) power at approx. 90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 13/ cm/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sub o/ approx. = 0.2 to 0.4more » m) current channel to be established with a relatively low initial loop voltage (less than or equal to 25 V). During the subsequent plasma expansion and current ramp phase, additional rf power is introduced to reduce volt-second consumption due to plasma resistance. A near classical particle and energy transport model has been developed to estimate the efficiency of electron heating in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter. The ambipolar electric field (E/sub AMB/) enables the plasma to neutralize itself via poloidal E vector/sub AMB/ x B vector drift. This form of effective rotational transform short-circuits the vertical charge separation and improves particle confinement.« less

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

High reliability low jitter pulse generator

DOEpatents

Savage, Mark E.; Stoltzfus, Brian S.

2013-01-01

A method and concomitant apparatus for generating pulses comprising providing a laser light source, disposing a voltage electrode between ground electrodes, generating laser sparks using the laser light source via laser spark gaps between the voltage electrode and the ground electrodes, and outputting pulses via one or more insulated ground connectors connected to the voltage electrode.

n+ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC

PubMed Central

Zhang, Zhiqiang; Liao, Xiaoping

2017-01-01

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n+ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than −17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µV/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µV/mW for the sensor with the thermal slug and the back cavity, respectively. PMID:28629144

Characterization of low-pressure microwave and radio frequency discharges in oxygen applying optical emission spectroscopy and multipole resonance probe

NASA Astrophysics Data System (ADS)

Steves, Simon; Styrnoll, Tim; Mitschker, Felix; Bienholz, Stefan; Nikita, Bibinov; Awakowicz, Peter

2013-11-01

Optical emission spectroscopy (OES) and multipole resonance probe (MRP) are adopted to characterize low-pressure microwave (MW) and radio frequency (RF) discharges in oxygen. In this context, both discharges are usually applied for the deposition of permeation barrier SiOx films on plastic foils or the inner surface of plastic bottles. For technological reasons the MW excitation is modulated and a continuous wave (cw) RF bias is used. The RF voltage produces a stationary low-density plasma, whereas the high-density MW discharge is pulsed. For the optimization of deposition process and the quality of the deposited barrier films, plasma conditions are characterized using OES and MRP. To simplify the comparison of applied diagnostics, both MW and RF discharges are studied separately in cw mode. The OES and MRP diagnostic methods complement each other and provide reliable information about electron density and electron temperature. In the MW case, electron density amounts to ne = (1.25 ± 0.26) × 1017 m-3, and kTe to 1.93 ± 0.20 eV, in the RF case ne = (6.8 ± 1.8)×1015 m-3 and kTe = 2.6 ± 0.35 eV. The corresponding gas temperatures are 760±40 K and 440±20 K.

n⁺ GaAs/AuGeNi-Au Thermocouple-Type RF MEMS Power Sensors Based on Dual Thermal Flow Paths in GaAs MMIC.

PubMed

Zhang, Zhiqiang; Liao, Xiaoping

2017-06-17

To achieve radio frequency (RF) power detection, gain control, and circuit protection, this paper presents n⁺ GaAs/AuGeNi-Au thermocouple-type RF microelectromechanical system (MEMS) power sensors based on dual thermal flow paths. The sensors utilize a conversion principle of RF power-heat-voltage, where a thermovoltage is obtained as the RF power changes. To improve the heat transfer efficiency and the sensitivity, structures of two heat conduction paths are designed: one in which a thermal slug of Au is placed between two load resistors and hot junctions of the thermocouples, and one in which a back cavity is fabricated by the MEMS technology to form a substrate membrane underneath the resistors and the hot junctions. The improved sensors were fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process. Experiments show that these sensors have reflection losses of less than -17 dB up to 12 GHz. At 1, 5, and 10 GHz, measured sensitivities are about 63.45, 53.97, and 44.14 µ V/mW for the sensor with the thermal slug, and about 111.03, 94.79, and 79.04 µ V/mW for the sensor with the thermal slug and the back cavity, respectively.

Frequency-tuning radiofrequency plasma source operated in inductively-coupled mode under a low magnetic field

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Nakano, Yudai; Ando, Akira

2017-07-01

A radiofrequency (rf) inductively-coupled plasma source is operated with a frequency-tuning impedance matching system, where the rf frequency is variable in the range of 20-50 MHz and the maximum power is 100 W. The source consists of a 45 mm-diameter pyrex glass tube wound by an rf antenna and a solenoid providing a magnetic field strength in the range of 0-200 Gauss. A reflected rf power for no plasma case is minimized at the frequency of ˜25 MHz, whereas the frequency giving the minimum reflection with the high density plasma is about 28 MHz, where the density jump is observed when minimizing the reflection. A high density argon plasma above 1× {{10}12} cm-3 is successfully obtained in the source for the rf power of 50-100 W, where it is observed that an external magnetic field of a few tens of Gauss yields the highest plasma density in the present configuration. The frequency-tuning plasma source is applied to a compact and high-speed silicon etcher in an Ar-SF6 plasma; then the etching rate of 8~μ m min-1 is obtained for no bias voltage to the silicon wafer, i.e. for the case that a physical ion etching process is eliminated.

Field emission from carbon nanotube fibers in varying anode-cathode gap with the consideration of contact resistance

NASA Astrophysics Data System (ADS)

Zhang, Peng; Fairchild, S. B.; Back, T. C.; Luo, Yi

2017-12-01

This paper studies field emission (FE) from a single carbon nanotube (CNT) fiber with different anode-cathode (AK) gap distances. It is found that the field enhancement factor depends strongly on the finite AK gap distance, due to the combination of geometrical effects and possible fiber morphology change. The geometrical effects of AK gap distance on the field enhancement factor are confirmed using COMSOL simulations. The slope drop in the Fowler-Northeim (FN) plot of the FE data in the high voltage is related to the electrical contact resistance between the CNT fiber and the substrate. It is found that even a small series resistance to the field emitter (<30% of the emission gap impedance) can strongly modify the FE characteristics in the high voltage regime, inducing a strong deviation from the linear FN plot.

Study of electric field distorted by space charges under positive lightning impulse voltage

NASA Astrophysics Data System (ADS)

Wang, Zezhong; Geng, Yinan

2018-03-01

Actually, many insulation problems are related to electric fields. And measuring electric fields is an important research topic of high-voltage engineering. In particular, the electric field distortion caused by space charge is the basis of streamer theory, and thus quantitatively measuring the Poisson electric field caused by space charge is significant to researching the mechanism of air gap discharge. In this paper, we used our photoelectric integrated sensor to measure the electric field distribution in a 1-m rod-plane gap under positive lightning impulse voltage. To verify the reliability of this quantitative measurement, we compared the measured results with calculated results from a numerical simulation. The electric-field time domain waveforms on the axis of the 1-m rod-plane out of the space charge zone were measured with various electrodes. The Poisson electric fields generated by space charge were separated from the Laplace electric field generated by applied voltages, and the amplitudes and variations were measured for various applied voltages and at various locations. This work also supplies the feasible basis for directly measuring strong electric field under high voltage.

Characterization on RF magnetron sputtered niobium pentoxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usha, N.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-10-15

Niobium pentoxide (Nb{sub 2}O{sub 5}) thin films with amorphous nature were deposited on microscopic glass substrates at 100°C by rf magnetron sputtering technique. The effect of rf power on the structural, morphological, optical, and vibrational properties of Nb{sub 2}O{sub 5} films have been investigated. Optical study shows the maximum average transmittance of about 87% and the optical energy band gap (indirect allowed) changes between 3.70 eV and 3.47 eV. AFM result indicates the smooth surface nature of the samples. Photoluminescence measurement showed the better optical quality of the deposited films. Raman spectra show the LO-TO splitting of Nb-O stretching ofmore » Nb{sub 2}O{sub 5} films.« less

Two-dimensional numerical study of two counter-propagating helium plasma jets in air at atmospheric pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Wen; Sang, Chaofeng; Wang, Dezhen, E-mail: wangdez@dlut.edu.cn

In this paper, a computational study of two counter-propagating helium plasma jets in ambient air is presented. A two-dimensional fluid model is applied to investigate the physical processes of the two plasma jets interaction (PJI) driven by equal and unequal voltages, respectively. In all studied cases, the PJI results in a decrease of both plasma bullets propagation velocity. When the two plasma jets are driven by equal voltages, they never merge but rather approach each other around the middle of the gas gap at a minimum approach distance, and the minimal distance decreases with the increase of both the appliedmore » voltages and initial electron density, but increases with the increase of the relative permittivity. When the two plasma jets are driven by unequal voltages, we observe the two plasma jets will merge at the position away from the middle of the gas gap. The effect of applied voltage difference on the PJI is also studied.« less

Review of mixer design for low voltage - low power applications

NASA Astrophysics Data System (ADS)

Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.

2017-09-01

A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

NASA Astrophysics Data System (ADS)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

Precursor and Neutral Loss Scans in an RF Scanning Linear Quadrupole Ion Trap

NASA Astrophysics Data System (ADS)

Snyder, Dalton T.; Szalwinski, Lucas J.; Schrader, Robert L.; Pirro, Valentina; Hilger, Ryan; Cooks, R. Graham

2018-03-01

Methodology for performing precursor and neutral loss scans in an RF scanning linear quadrupole ion trap is described and compared to the unconventional ac frequency scan technique. In the RF scanning variant, precursor ions are mass selectively excited by a fixed frequency resonance excitation signal at low Mathieu q while the RF amplitude is ramped linearly to pass ions through the point of excitation such that the excited ion's m/z varies linearly with time. Ironically, a nonlinear ac frequency scan is still required for ejection of the product ions since their frequencies vary nonlinearly with the linearly varying RF amplitude. In the case of the precursor scan, the ejection frequency must be scanned so that it is fixed on a product ion m/z throughout the RF scan, whereas in the neutral loss scan, it must be scanned to maintain a constant mass offset from the excited precursor ions. Both simultaneous and sequential permutation scans are possible; only the former are demonstrated here. The scans described are performed on a variety of samples using different ionization sources: protonated amphetamine ions generated by nanoelectrospray ionization (nESI), explosives ionized by low-temperature plasma (LTP), and chemical warfare agent simulants sampled from a surface and analyzed with swab touch spray (TS). We lastly conclude that the ac frequency scan variant of these MS/MS scans is preferred due to electronic simplicity. In an accompanying manuscript, we thus describe the implementation of orthogonal double resonance precursor and neutral loss scans on the Mini 12 using constant RF voltage. [Figure not available: see fulltext.

RF rectifiers for EM power harvesting in a Deep Brain Stimulating device.

PubMed

Hosain, Md Kamal; Kouzani, Abbas Z; Tye, Susannah; Kaynak, Akif; Berk, Michael

2015-03-01

A passive deep brain stimulation (DBS) device can be equipped with a rectenna, consisting of an antenna and a rectifier, to harvest energy from electromagnetic fields for its operation. This paper presents optimization of radio frequency rectifier circuits for wireless energy harvesting in a passive head-mountable DBS device. The aim is to achieve a compact size, high conversion efficiency, and high output voltage rectifier. Four different rectifiers based on the Delon doubler, Greinacher voltage tripler, Delon voltage quadrupler, and 2-stage charge pumped architectures are designed, simulated, fabricated, and evaluated. The design and simulation are conducted using Agilent Genesys at operating frequency of 915 MHz. A dielectric substrate of FR-4 with thickness of 1.6 mm, and surface mount devices (SMD) components are used to fabricate the designed rectifiers. The performance of the fabricated rectifiers is evaluated using a 915 MHz radio frequency (RF) energy source. The maximum measured conversion efficiency of the Delon doubler, Greinacher tripler, Delon quadrupler, and 2-stage charge pumped rectifiers are 78, 75, 73, and 76 % at -5 dBm input power and for load resistances of 5-15 kΩ. The conversion efficiency of the rectifiers decreases significantly with the increase in the input power level. The Delon doubler rectifier provides the highest efficiency at both -5 and 5 dBm input power levels, whereas the Delon quadrupler rectifier gives the lowest efficiency for the same inputs. By considering both efficiency and DC output voltage, the charge pump rectifier outperforms the other three rectifiers. Accordingly, the optimised 2-stage charge pumped rectifier is used together with an antenna to harvest energy in our DBS device.

SU-F-T-554: Dark Current Effect On CyberKnife Beam Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, H; Chang, A

Purpose: All RF linear accelerators produce dark current to varying degrees when an accelerating voltage and RF input is applied in the absence of electron gun injection. This study is to evaluate how dark current from the linear accelerator of CyberKnife affect the dose in the reference dosimetry. Methods: The G4 CyberKnife system with 6MV photon beam was used in this study. Using the ion chamber and the diode detector, the dose was measured in water with varying time delay between acquiring charges and staring beam-on after applying high-voltage into the linear accelerator. The dose was measured after the timemore » delay with over the range of 0 to 120 seconds in the accelerating high-voltage mode without beam-on, applying 0, 10, 50, 100, and 200 MUs. For the measurements, the collimator of 60 mm was used and the detectors were placed at the depths of 10 cm with the source-to-surface distance of 80 cm. Results: The dark current was constant over time regardless of MU. The dose due to the dark current increased over time linearly with the R-squared value of 0.9983 up to 4.4 cGy for the time 120 seconds. In the dose rate setting of 720 MU/min, the relative dose when applying the accelerating voltage without beam-on was increased over time up to 0.6% but it was less than the leakage radiation resulted from the accelerated head. As the reference dosimetry condition, when 100 MU was delivered after 10 seconds time delay, the relative dose increased by 0.7% but 6.7% for the low MU (10 MU). Conclusion: In the dosimetry using CyberKnife system, the constant dark current affected to the dose. Although the time delay in the accelerating high-voltage mode without beam-on is within 10 seconds, the dose less than 100 cGy can be overestimated more than 1%.« less

Fiber optic crossbar switch for automatically patching optical signals

NASA Technical Reports Server (NTRS)

Bell, C. H. (Inventor)

1983-01-01

A system for automatically optically switching fiber optic data signals between a plurality of input optical fibers and selective ones of a plurality of output fibers is described. The system includes optical detectors which are connected to each of the input fibers for converting the optic data signals appearing at the respective input fibers to an RF signal. A plurality of RF to optical signal converters are arranged in rows and columns. The output of each of the optical detectors are each applied to a respective row of optical signal converted for being converters back to an optical signal when the particular optical signal converter is selectively activated by a dc voltage.

Using the intrinsic properties of silicon micro-ring modulators for characterization of RF termination

NASA Astrophysics Data System (ADS)

Wang, Zhao; Knights, Andrew P.

2017-02-01

We describe a direct experimental method to determine the effective driving voltage (Vpp) applied to a silicon photonic modulator possessing an impedance mismatch between the unterminated capacitive load and input source. This method thus permits subsequent estimation of the power consumption of an imperfectly terminated device as well as a deduction of load impedance for optimization of termination design. The capacitive load in this paper is a silicon micro-ring modulator with an integrated p-n junction acting as a phase shifter. The RF reflection under high-speed drive is directly determined from observation of the eye-diagram following measurement of the power transfer function for various junction bias.

Digitally synthesized high purity, high-voltage radio frequency drive electronics for mass spectrometry.

PubMed

Schaefer, R T; MacAskill, J A; Mojarradi, M; Chutjian, A; Darrach, M R; Madzunkov, S M; Shortt, B J

2008-09-01

Reported herein is development of a quadrupole mass spectrometer controller (MSC) with integrated radio frequency (rf) power supply and mass spectrometer drive electronics. Advances have been made in terms of the physical size and power consumption of the MSC, while simultaneously making improvements in frequency stability, total harmonic distortion, and spectral purity. The rf power supply portion of the MSC is based on a series-resonant LC tank, where the capacitive load is the mass spectrometer itself, and the inductor is a solenoid or toroid, with various core materials. The MSC drive electronics is based on a field programmable gate array (FPGA), with serial peripheral interface for analog-to-digital and digital-to-analog converter support, and RS232/RS422 communications interfaces. The MSC offers spectral quality comparable to, or exceeding, that of conventional rf power supplies used in commercially available mass spectrometers; and as well an inherent flexibility, via the FPGA implementation, for a variety of tasks that includes proportional-integral derivative closed-loop feedback and control of rf, rf amplitude, and mass spectrometer sensitivity. Also provided are dc offsets and resonant dipole excitation for mass selective accumulation in applications involving quadrupole ion traps; rf phase locking and phase shifting for external loading of a quadrupole ion trap; and multichannel scaling of acquired mass spectra. The functionality of the MSC is task specific, and is easily modified by simply loading FPGA registers or reprogramming FPGA firmware.

A Model-Based Fast Protection System for High-Power RF Tube Amplifiers Used at the European XFEL Accelerator

NASA Astrophysics Data System (ADS)

Butkowski, Łukasz; Vogel, Vladimir; Schlarb, Holger; Szabatin, Jerzy

2017-06-01

The driving engine of the superconducting accelerator of the European X-ray free electron laser (XFEL) is a set of 27 radio frequency (RF) stations. Each of the underground RF stations consists of a multibeam horizontal klystron that can provide up to 10 MW of power at 1.3 GHz. Klystrons are sensitive devices with a limited lifetime and a high mean time between failures. In real operation, the lifetime of the tube can be significantly reduced because of failures. The special fast protection klystron lifetime management (KLM) system has been developed to minimize the influence of service conditions on the lifetime of klystrons. The main task of this system is to detect all events which can destroy the tube as quickly as possible, and switch off the driving RF signal or the high voltage. Detection of events is based on a comparison of the value of the real signal obtained at the system output with the value estimated on the basis of a high-power RF amplifier model and input signals. The KLM system has been realized in field-programmable gate array (FPGA) and implemented in XFEL. Implementation is based on the standard low-level RF micro telecommunications computing architecture (MTCA.4 or xTCA). The main part of the paper focuses on an estimation of the klystron model and the implementation of KLM in FPGA. The results of the performance of the KLM system will also be presented.

Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

NASA Technical Reports Server (NTRS)

Stearns, E. J.

1971-01-01

Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

Working group report on advanced high-voltage high-power and energy-storage space systems

NASA Technical Reports Server (NTRS)

Cohen, H. A.; Cooke, D. L.; Evans, R. W.; Hastings, D.; Jongeward, G.; Laframboise, J. G.; Mahaffey, D.; Mcintyre, B.; Pfizer, K. A.; Purvis, C.

1986-01-01

Space systems in the future will probably include high-voltage, high-power energy-storage and -production systems. Two such technologies are high-voltage ac and dc systems and high-power electrodynamic tethers. The working group identified several plasma interaction phenomena that will occur in the operation of these power systems. The working group felt that building an understanding of these critical interaction issues meant that several gaps in our knowledge had to be filled, and that certain aspects of dc power systems have become fairly well understood. Examples of these current collection are in quiescent plasmas and snap over effects. However, high-voltage dc and almost all ac phenomena are, at best, inadequately understood. In addition, there is major uncertainty in the knowledge of coupling between plasmas and large scale current flows in space plasmas. These gaps in the knowledge are addressed.

Achievement and improvement of the JT-60U negative ion source for JT-60 Super Advanced (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Tanaka, Y.

2010-02-15

Developments of the large negative ion source have been progressed in the high-energy, high-power, and long-pulse neutral beam injector for JT-60 Super Advanced. Countermeasures have been studied and tested for critical issues of grid heat load and voltage holding capability. As for the heat load of the acceleration grids, direct interception of D{sup -} ions was reduced by adjusting the beamlet steering. As a result, the heat load was reduced below an allowable level for long-pulse injections. As for the voltage holding capability, local electric field was mitigated by tuning gap lengths between large-area acceleration grids in the accelerator. Asmore » a result, the voltage holding capability was improved up to the rated value of 500 kV. To investigate the voltage holding capability during beam acceleration, the beam acceleration test is ongoing with new extended gap.« less

Study on the streamer inception characteristics under positive lightning impulse voltage

NASA Astrophysics Data System (ADS)

Wang, Zezhong; Geng, Yinan

2017-11-01

The streamer is the main process in an air gap discharge, and the inception characteristics of streamers have been widely applied in engineering. Streamer inception characteristics under DC voltage have been studied by many researchers, but the inception characteristics under impulse voltage, and particularly under lightning impulse voltage with a high voltage rise rate have rarely been studied. A measurement system based on integrated optoelectronic technology has been proposed in this paper, and the streamer inception characteristics in a 1-m-long rod-plane air gap that was energized by a positive lightning impulse voltage have been researched. We have also measured the streamer inception electric field using electrodes with different radii of curvature and different voltage rise rates. As a result, a modified empirical criterion for the streamer inception electric field that considers the voltage rise rate has been proposed, and the wide applicability of this criterion has been proved. Based on the streamer inception time-lag obtained, we determined that the field distribution obeys a Rayleigh distribution, which explains the change law of the streamer inception time-lag. The characteristic parameter of the Rayleigh distribution lies in the range from 0.6 to 2.5 when the radius of curvature of the electrode head is in the range from 0.5 cm to 2.5 cm and the voltage rise rate ranges from 80 kV/μs to 240kV/μs under positive lightning impulse voltage.

A simple high-voltage high current spark gap with subnanosecond jitter triggered by femtosecond laser filamentation

NASA Astrophysics Data System (ADS)

Arantchouk, L.; Houard, A.; Brelet, Y.; Carbonnel, J.; Larour, J.; André, Y.-B.; Mysyrowicz, A.

2013-04-01

We describe a simple, sturdy, and reliable spark gap operating with air at atmospheric pressure and able to switch currents in excess of 10 kA with sub-nanosecond jitter. The spark gap is remotely triggered by a femtosecond laser filament.

Homogeneous dielectric barrier discharges in atmospheric air and its influencing factor

NASA Astrophysics Data System (ADS)

Ran, Junxia; Li, Caixia; Ma, Dong; Luo, Haiyun; Li, Xiaowei

2018-03-01

The stable homogeneous dielectric barrier discharge (DBD) is obtained in atmospheric 2-3 mm air gap. It is generated using center frequency 1 kHz high voltage power supply between two plane parallel electrodes with specific alumina ceramic plates as the dielectric barriers. The discharge characteristics are studied by a measurement of its electrical discharge parameters and observation of its light emission phenomena. The results show that a large single current pulse of about 200 μs duration appearing in each voltage pulse, and its light emission is radially homogeneous and covers the entire surface of the two electrodes. The homogeneous discharge generated is a Townsend discharge during discharge. The influences of applied barrier, its thickness, and surface roughness on the transition of discharge modes are studied. The results show that it is difficult to produce a homogeneous discharge using smooth plates or alumina plate surface roughness Ra < 100 nm even at a 1 mm air gap. If the alumina plate is too thin, the discharge also transits to filamentary discharge. If it is too thick, the discharge is too weak to observe. With the increase of air gap distance and applied voltage, the discharge can also transit from a homogeneous mode to a filamentary mode. In order to generate stable and homogeneous DBD at a larger air gap, proper dielectric material, dielectric thickness, and dielectric surface roughness should be used, and proper applied voltage amplitude and frequency should also be used.

LOW VOLTAGE 14 Mev NEUTRON SOURCE

DOEpatents

Little, R.N. Jr.; Graves, E.R.

1959-09-29

An apparatus yielding high-energy neutrons at the rate of 10/sup 8/ or more per second by the D,T or D,D reactions is described. The deuterium gas filling is ionized by electrons emitted from a filament, and the resulting ions are focused into a beam and accelerated against a fixed target. The apparatus is built in accordance with the relationship V/sub s/ = A--B log pd, where V/sub s/ is the sparking voltage, p the gas pressure, and d the gap length between the high voltage electrodes. Typical parameters to obtain the high neutron yields are 55 to 80 kv, 0.5 to 7.0 ma beam current, 5 to 12 microns D/sub 2/, and a gap length of 1 centimeter.

Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model

NASA Astrophysics Data System (ADS)

Bilbro, Griff L.; Hou, Danqiong; Yin, Hong; Trew, Robert J.

2009-02-01

We have quantitatively modeled the conduction current and charge storage of an HFET in terms its physical dimensions and material properties. For DC or small-signal RF operation, no adjustable parameters are necessary to predict the terminal characteristics of the device. Linear performance measures such as small-signal gain and input admittance can be predicted directly from the geometric structure and material properties assumed for the device design. We have validated our model at low-frequency against experimental I-V measurements and against two-dimensional device simulations. We discuss our recent extension of our model to include a larger class of electron velocity-field curves. We also discuss the recent reformulation of our model to facilitate its implementation in commercial large-signal high-frequency circuit simulators. Large signal RF operation is more complex. First, the highest CW microwave power is fundamentally bounded by a brief, reversible channel breakdown in each RF cycle. Second, the highest experimental measurements of efficiency, power, or linearity always require harmonic load pull and possibly also harmonic source pull. Presently, our model accounts for these facts with an adjustable breakdown voltage and with adjustable load impedances and source impedances for the fundamental frequency and its harmonics. This has allowed us to validate our model for large signal RF conditions by simultaneously fitting experimental measurements of output power, gain, and power added efficiency of real devices. We show that the resulting model can be used to compare alternative device designs in terms of their large signal performance, such as their output power at 1dB gain compression or their third order intercept points. In addition, the model provides insight into new device physics features enabled by the unprecedented current and voltage levels of AlGaN/GaN HFETs, including non-ohmic resistance in the source access regions and partial depletion of the 2DEG in the drain access region.

Electronic Power Conditioner for Ku-band Travelling Wave Tube

NASA Astrophysics Data System (ADS)

Kowstubha, Palle; Krishnaveni, K.; Ramesh Reddy, K.

2017-04-01

A highly sophisticated regulated power supply is known as electronic power conditioner (EPC) is required to energise travelling wave tubes (TWTs), which are used as RF signal amplifiers in satellite payloads. The assembly consisting of TWT and EPC together is known as travelling wave tube amplifier (TWTA). EPC is used to provide isolated and conditioned voltage rails with tight regulation to various electrodes of TWT and makes its RF performance independent of solar bus variations which are caused due to varying conditions of eclipse and sunlit. The payload mass and their power consumption is mainly due to the existence of TWTAs that represent about 35 % of total mass and about 70-90 % (based on the type of satellite application) of overall dc power consumption. This situation ensures a continuous improvement in the design of TWTAs and their associated EPCs to realize more efficient and light products. Critical technologies involved in EPCs are design and configuration, closed loop regulation, component and material selection, energy limiting of high voltage (HV) outputs and potting of HV card etc. This work addresses some of these critical technologies evolved in realizing and testing the state of art of EPC and it focuses on the design of HV supply with a HV and high power capability, up to 6 kV and 170 WRF, respectively required for a space TWTA. Finally, an experimental prototype of EPC with a dc power of 320 W provides different voltages required by Ku-band TWT in open loop configuration.

Strategies for dynamic soft-landing in capacitive microelectromechanical switches

NASA Astrophysics Data System (ADS)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad A.

2011-06-01

Electromechanical dielectric degradation associated with the hard landing of movable electrode is a technology-inhibiting reliability concern for capacitive RF-MEMS switches. In this letter, we propose two schemes for dynamic soft-landing that obviate the need for external feedback circuitry. Instead, the proposed resistive and capacitive braking schemes can reduce impact velocity significantly without compromising other performance characteristics like pull-in voltage and pull-in time. Resistive braking is achieved by inserting a resistance in series with the voltage source whereas capacitive braking requires patterning of the electrode or the dielectric. Our results have important implications to the design and optimization of reliability aware electrostatically actuated MEMS switches.

Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts

NASA Astrophysics Data System (ADS)

Luo, B.; Mehandru, R.; Kang, B. S.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, C. R.; Pearton, S. J.; Gotthold, D.; Birkhahn, R.; Peres, B.; Fitch, R.; Gillespie, J. K.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.

2004-02-01

The rf performance of 1 × 200 μm 2 AlGaN/GaN MOS-HEMTs with Sc 2O 3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ˜11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.

Investigation on the effect of RF air plasma and neem leaf extract treatment on the surface modification and antimicrobial activity of cotton fabric

NASA Astrophysics Data System (ADS)

Vaideki, K.; Jayakumar, S.; Rajendran, R.; Thilagavathi, G.

2008-02-01

A thorough investigation on the antimicrobial activity of RF air plasma and azadirachtin (neem leaf extract) treated cotton fabric has been dealt with in this paper. The cotton fabric was given a RF air plasma treatment to improve its hydrophilicity. The process parameters such as electrode gap, time of exposure and RF power have been varied to study their effect in improving the hydrophilicity of the cotton fabric and they were optimized based on the static immersion test results. The neem leaf extract (azadirachtin) was applied on fabric samples to impart antimicrobial activity. The antimicrobial efficacy of the samples have been analysed and compared with the efficacy of the cotton fabric treated with the antimicrobial finish alone. The investigation reveals that the RF air plasma has modified the surface of the fabric, which in turn increased the antimicrobial activity of the fabric when treated with azadirachtin. The surface modification due to RF air plasma treatment has been analysed by comparing the FTIR spectra of the untreated and plasma treated samples. The molecular interaction between the fabric, azadirachtin and citric acid which was used as a cross linking agent to increase the durability of the antimicrobial finish has also been analysed using FTIR spectra.

Conditioning of high voltage radio frequency cavities by using fuzzy logic in connection with rule based programming

NASA Astrophysics Data System (ADS)

Perreard, S.; Wildner, E.

1994-12-01

Many processes are controlled by experts using some kind of mental model to decide on actions and make conclusions. This model, based on heuristic knowledge, can often be represented by rules and does not have to be particularly accurate. Such is the case for the problem of conditioning high voltage RF cavities; the expert has to decide, by observing some criteria, whether to increase or to decrease the voltage and by how much. A program has been implemented which can be applied to a class of similar problems. The kernel of the program is a small rule base, which is independent of the kind of cavity. To model a specific cavity, we use fuzzy logic which is implemented as a separate routine called by the rule base, to translate from numeric to symbolic information.

Implementation of a wireless ECG acquisition SoC for IEEE 802.15.4 (ZigBee) applications.

PubMed

Wang, Liang-Hung; Chen, Tsung-Yen; Lin, Kuang-Hao; Fang, Qiang; Lee, Shuenn-Yuh

2015-01-01

This paper presents a wireless biosignal acquisition system-on-a-chip (WBSA-SoC) specialized for electrocardiogram (ECG) monitoring. The proposed system consists of three subsystems, namely, 1) the ECG acquisition node, 2) the protocol for standard IEEE 802.15.4 ZigBee system, and 3) the RF transmitter circuits. The ZigBee protocol is adopted for wireless communication to achieve high integration, applicability, and portability. A fully integrated CMOS RF front end containing a quadrature voltage-controlled oscillator and a 2.4-GHz low-IF (i.e., zero-IF) transmitter is employed to transmit ECG signals through wireless communication. The low-power WBSA-SoC is implemented by the TSMC 0.18-μm standard CMOS process. An ARM-based displayer with FPGA demodulation and an RF receiver with analog-to-digital mixed-mode circuits are constructed as verification platform to demonstrate the wireless ECG acquisition system. Measurement results on the human body show that the proposed SoC can effectively acquire ECG signals.

Comparison of three rf plasma impedance monitors on a high phase angle planar inductively coupled plasma source

NASA Astrophysics Data System (ADS)

Uchiyama, H.; Watanabe, M.; Shaw, D. M.; Bahia, J. E.; Collins, G. J.

1999-10-01

Accurate measurement of plasma source impedance is important for verification of plasma circuit models, as well as for plasma process characterization and endpoint detection. Most impedance measurement techniques depend in some manner on the cosine of the phase angle to determine the impedance of the plasma load. Inductively coupled plasmas are generally highly inductive, with the phase angle between the applied rf voltage and the rf current in the range of 88 to near 90 degrees. A small measurement error in this phase angle range results in a large error in the calculated cosine of the angle, introducing large impedance measurement variations. In this work, we have compared the measured impedance of a planar inductively coupled plasma using three commercial plasma impedance monitors (ENI V/I probe, Advanced Energy RFZ60 and Advanced Energy Z-Scan). The plasma impedance is independently verified using a specially designed match network and a calibrated load, representing the plasma, to provide a measurement standard.

Status and operation of the Linac4 ion source prototypes

NASA Astrophysics Data System (ADS)

Lettry, J.; Aguglia, D.; Andersson, P.; Bertolo, S.; Butterworth, A.; Coutron, Y.; Dallocchio, A.; Chaudet, E.; Gil-Flores, J.; Guida, R.; Hansen, J.; Hatayama, A.; Koszar, I.; Mahner, E.; Mastrostefano, C.; Mathot, S.; Mattei, S.; Midttun, Ø.; Moyret, P.; Nisbet, D.; Nishida, K.; O'Neil, M.; Ohta, M.; Paoluzzi, M.; Pasquino, C.; Pereira, H.; Rochez, J.; Sanchez Alvarez, J.; Sanchez Arias, J.; Scrivens, R.; Shibata, T.; Steyaert, D.; Thaus, N.; Yamamoto, T.

2014-02-01

CERN's Linac4 45 kV H- ion sources prototypes are installed at a dedicated ion source test stand and in the Linac4 tunnel. The operation of the pulsed hydrogen injection, RF sustained plasma, and pulsed high voltages are described. The first experimental results of two prototypes relying on 2 MHz RF-plasma heating are presented. The plasma is ignited via capacitive coupling, and sustained by inductive coupling. The light emitted from the plasma is collected by viewports pointing to the plasma chamber wall in the middle of the RF solenoid and to the plasma chamber axis. Preliminary measurements of optical emission spectroscopy and photometry of the plasma have been performed. The design of a cesiated ion source is presented. The volume source has produced a 45 keV H- beam of 16-22 mA which has successfully been used for the commissioning of the Low Energy Beam Transport (LEBT), Radio Frequency Quadrupole (RFQ) accelerator, and chopper of Linac4.

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Miniaturized magnet-less RF electron trap. II. Experimental verification

DOE PAGES

Deng, Shiyang; Green, Scott R.; Markosyan, Aram H.; ...

2017-06-15

Atomic microsystems have the potential of providing extremely accurate measurements of timing and acceleration. But, atomic microsystems require active maintenance of ultrahigh vacuum in order to have reasonable operating lifetimes and are particularly sensitive to magnetic fields that are used to trap electrons in traditional sputter ion pumps. Our paper presents an approach to trapping electrons without the use of magnetic fields, using radio frequency (RF) fields established between two perforated electrodes. The challenges associated with this magnet-less approach, as well as the miniaturization of the structure, are addressed. These include, for example, the transfer of large voltage (100–200 V)more » RF power to capacitive loads presented by the structure. The electron trapping module (ETM) described here uses eight electrode elements to confine and measure electrons injected by an electron beam, within an active trap volume of 0.7 cm 3. The operating RF frequency is 143.6 MHz, which is the measured series resonant frequency between the two RF electrodes. It was found experimentally that the steady state electrode potentials on electrodes near the trap became more negative after applying a range of RF power levels (up to 0.15 W through the ETM), indicating electron densities of ≈3 × 10 5 cm -3 near the walls of the trap. The observed results align well with predicted electron densities from analytical and numerical models. The peak electron density within the trap is estimated as ~1000 times the electron density in the electron beam as it exits the electron gun. Finally, this successful demonstration of the RF electron trapping concept addresses critical challenges in the development of miniaturized magnet-less ion pumps.« less

Slip-stacking Dynamics for High-Power Proton Beams at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eldred, Jeffrey Scott

Slip-stacking is a particle accelerator configuration used to store two particle beams with different momenta in the same ring. The two beams are longitudinally focused by two radiofrequency (RF) cavities with a small frequency difference between them. Each beam is synchronized to one RF cavity and perturbed by the other RF cavity. Fermilab uses slip-stacking in the Recycler so as to double the power of the 120 GeV proton beam in the Main Injector. This dissertation investigates the dynamics of slip-stacking beams analytically, numerically and experimentally. In the analytic analysis, I find the general trajectory of stable slip-stacking particles andmore » identify the slip-stacking parametric resonances. In the numerical analysis, I characterize the stable phase-space area and model the particle losses. In particular, I evaluate the impact of upgrading the Fermilab Booster cycle-rate from 15 Hz to 20 Hz as part of the Proton Improvement Plan II (PIP-II). The experimental analysis is used to verify my approach to simulating slip-stacking loss. I design a study for measuring losses from the longitudinal single-particle dynamics of slip-stacking as a function of RF cavity voltage and RF frequency separation. I further propose the installation of a harmonic RF cavity and study the dynamics of this novel slip-stacking configuration. I show the harmonic RF cavity cancels out parametric resonances in slip-stacking, reduces emittance growth during slip-stacking, and dramatically enhances the stable phase-space area. The harmonic cavity is expected to reduce slip-stacking losses to far exceed PIP-II requirements. These results raise the possibility of extending slip-stacking beyond the PIP-II era.« less

Characterization of Traveling Wave Ion Mobility Separations in Structures for Lossless Ion Manipulations

DOE PAGES

Hamid, Ahmed M.; Ibrahim, Yehia M.; Garimella, Venkata BS; ...

2015-10-28

We report on the development and characterization of a new traveling wave-based Structure for Lossless Ion Manipulations (TW-SLIM) for ion mobility separations (IMS). The TW-SLIM module uses parallel arrays of rf electrodes on two closely spaced surfaces for ion confinement, where the rf electrodes are separated by arrays of short electrodes, and using these TWs can be created to drive ion motion. In this initial work, TWs are created by the dynamic application of dc potentials. The capabilities of the TW-SLIM module for efficient ion confinement, lossless ion transport, and ion mobility separations at different rf and TW parameters aremore » reported. The TW-SLIM module is shown to transmit a wide mass range of ions (m/z 200–2500) utilizing a confining rf waveform (~1 MHz and ~300 V p-p) and low TW amplitudes (<20 V). Additionally, the short TW-SLIM module achieved resolutions comparable to existing commercially available low pressure IMS platforms and an ion mobility peak capacity of ~32 for TW speeds of <210 m/s. TW-SLIM performance was characterized over a wide range of rf and TW parameters and demonstrated robust performance. In conclusion, the combined attributes of the flexible design and low voltage requirements for the TW-SLIM module provide a basis for devices capable of much higher resolution and more complex ion manipulations.« less

RF-MEMS for future mobile applications: experimental verification of a reconfigurable 8-bit power attenuator up to 110 GHz

NASA Astrophysics Data System (ADS)

Iannacci, J.; Tschoban, C.

2017-04-01

RF-MEMS technology is proposed as a key enabling solution for realising the high-performance and highly reconfigurable passive components that future communication standards will demand. In this work, we present, test and discuss a novel design concept for an 8-bit reconfigurable power attenuator, manufactured using the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches in order to select/deselect the resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises eight cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. The fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated with Ansys HFSS. The device exhibits attenuation levels (S21) in the range from  -10 dB to  -60 dB, up to 110 GHz. In particular, S21 shows flatness from 15 dB down to 3-5 dB and from 10 MHz to 50 GHz, as well as fewer linear traces up to 110 GHz. A comprehensive discussion is developed regarding the voltage standing wave ratio, which is employed as a quality indicator for the attenuation levels. The margins of improvement at design level which are needed to overcome the limitations of the presented RF-MEMS device are also discussed.

Single-chip fully integrated direct-modulation CMOS RF transmitters for short-range wireless applications.

PubMed

El-Desouki, Munir M; Qasim, Syed Manzoor; BenSaleh, Mohammed; Deen, M Jamal

2013-08-02

Ultra-low power radio frequency (RF) transceivers used in short-range application such as wireless sensor networks (WSNs) require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs) in addition to a 2.0 GHz phase-locked loop (PLL) based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of -122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of -120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

A flexible super-capacitive solid-state power supply for miniature implantable medical devices.

PubMed

Meng, Chuizhou; Gall, Oren Z; Irazoqui, Pedro P

2013-12-01

We present a high-energy local power supply based on a flexible and solid-state supercapacitor for miniature wireless implantable medical devices. Wireless radio-frequency (RF) powering recharges the supercapacitor through an antenna with an RF rectifier. A power management circuit for the super-capacitive system includes a boost converter to increase the breakdown voltage required for powering device circuits, and a parallel conventional capacitor as an intermediate power source to deliver current spikes during high current transients (e.g., wireless data transmission). The supercapacitor has an extremely high area capacitance of ~1.3 mF/mm(2), and is in the novel form of a 100 μm-thick thin film with the merit of mechanical flexibility and a tailorable size down to 1 mm(2) to meet various clinical dimension requirements. We experimentally demonstrate that after fully recharging the capacitor with an external RF powering source, the supercapacitor-based local power supply runs a full system for electromyogram (EMG) recording that consumes ~670 μW with wireless-data-transmission functionality for a period of ~1 s in the absence of additional RF powering. Since the quality of wireless powering for implantable devices is sensitive to the position of those devices within the RF electromagnetic field, this high-energy local power supply plays a crucial role in providing continuous and reliable power for medical device operations.

RF Rectification on LAPD and NSTX: the relationship between rectified currents and potentials

NASA Astrophysics Data System (ADS)

Perkins, R. J.; Carter, T.; Caughman, J. B.; van Compernolle, B.; Gekelman, W.; Hosea, J. C.; Jaworski, M. A.; Kramer, G. J.; Lau, C.; Martin, E. H.; Pribyl, P.; Tripathi, S. K. P.; Vincena, S.

2017-10-01

RF rectification is a sheath phenomenon important in the fusion community for impurity injection, hot spot formation on plasma-facing components, modifications of the scrape-off layer, and as a far-field sink of wave power. The latter is of particular concern for the National Spherical Torus eXperiment (NSTX), where a substantial fraction of the fast-wave power is lost to the divertor along scrape-off layer field lines. To assess the relationship between rectified currents and rectified voltages, detailed experiments have been performed on the Large Plasma Device (LAPD). An electron current is measured flowing out of the antenna and into the limiters, consistent with RF rectification with a higher RF potential at the antenna. The scaling of this current with RF power will be presented. The limiters are also floated to inhibit this DC current; the impact of this change on plasma-potential and wave-field measurements will be shown. Comparison to data from divertor probes in NSTX will be made. These experiments on a flexible mid-sized experiment will provide insight and guidance into the effects of ICRF on the edge plasma in larger fusion experiments. Funded by the DOE OFES (DE-FC02-07ER54918 and DE-AC02-09CH11466), NSF (NSF- PHY 1036140), and the Univ. of California (12-LR- 237124).

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

NASA Astrophysics Data System (ADS)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Characterization of Traveling Wave Ion Mobility Separations in Structures for Lossless Ion Manipulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamid, Ahmed M.; Ibrahim, Yehia M.; Garimella, Venkata BS

We report on the development and characterization of a new traveling wave-based Structure for Lossless Ion Manipulations (TW-SLIM) for ion mobility separations (IMS). The TW-SLIM module uses parallel arrays of rf electrodes on two closely spaced surfaces for ion confinement, where the rf electrodes are separated by arrays of short electrodes, and using these TWs can be created to drive ion motion. In this initial work, TWs are created by the dynamic application of dc potentials. The capabilities of the TW-SLIM module for efficient ion confinement, lossless ion transport, and ion mobility separations at different rf and TW parameters aremore » reported. The TW-SLIM module is shown to transmit a wide mass range of ions (m/z 200–2500) utilizing a confining rf waveform (~1 MHz and ~300 V p-p) and low TW amplitudes (<20 V). Additionally, the short TW-SLIM module achieved resolutions comparable to existing commercially available low pressure IMS platforms and an ion mobility peak capacity of ~32 for TW speeds of <210 m/s. TW-SLIM performance was characterized over a wide range of rf and TW parameters and demonstrated robust performance. In conclusion, the combined attributes of the flexible design and low voltage requirements for the TW-SLIM module provide a basis for devices capable of much higher resolution and more complex ion manipulations.« less

Effects of nanoscale vacuum gap on photon-enhanced thermionic emission devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuan; Liao, Tianjun; Zhang, Yanchao

2016-01-28

A new model of the photon-enhanced thermionic emission (PETE) device with a nanoscale vacuum gap is established by introducing the quantum tunneling effect and the image force correction. Analytic expressions for both the thermionic emission and tunneling currents are derived. The electron concentration and the temperature of the cathode are determined by the particle conservation and energy balance equations. The effects of the operating voltage on the maximum potential barrier, cathode temperature, electron concentration and equilibrium electron concentration of the conduction band, and efficiency of the PETE device are discussed in detail for different given values of the vacuum gapmore » length. The influence of the band gap of the cathode and flux concentration on the efficiency is further analyzed. The maximum efficiency of the PETE and the corresponding optimum values of the band gap and the operating voltage are determined. The results obtained here show that the efficiency of the PETE device can be significantly improved by employing a nanoscale vacuum gap.« less

Design, Fabrication and Testing of Tunable RF Meta-atoms

DTIC Science & Technology

2012-06-14

Simple cantilever beam with actuation pad covered with a thin dielectric layer for short circuit protection...Cantilever actuation simulated with CoventorWare ® to determine the biasing voltage necessary to draw the cantilevers to the actuation pads ...Capacitive tunable meta-atom fabricated on quartz substrate. The meta-atom had to be cut at the metal trace leading to the cantilever actuation pads

ICRH antenna S-matrix measurements and plasma coupling characterisation at JET

NASA Astrophysics Data System (ADS)

Monakhov, I.; Jacquet, P.; Blackman, T.; Bobkov, V.; Dumortier, P.; Helou, W.; Lerche, E.; Kirov, K.; Milanesio, D.; Maggiora, R.; Noble, C.; Contributors, JET

2018-04-01

The paper is dedicated to the characterisation of multi-strap ICRH antenna coupling to plasma. Relevance of traditional concept of coupling resistance to antennas with mutually coupled straps is revised and the importance of antenna port excitation consistency for application of the concept is highlighted. A method of antenna S-matrix measurement in presence of plasma is discussed allowing deeper insight into the problem of antenna-plasma coupling. The method is based entirely on the RF plant hardware and control facilities available at JET and it involves application of variable phasing between the antenna straps during the RF plant operations at  >100 kW. Unlike traditional techniques relying on low-power (~10 mW) network analysers, the applied antenna voltage amplitudes are relevant to practical conditions of ICRH operations; crucially, they are high enough to minimise possible effects of antenna loading non-linearity due to the RF sheath effects and other phenomena which could affect low-power measurements. The method has been successfully applied at JET to conventional 4-port ICRH antennas energised at frequencies of 33 MHz, 42 MHz and 51 MHz during L-mode plasma discharges while different gas injection modules (GIMs) were used to maintain comparable plasma densities during the pulses. The S-matrix assessment and its subsequent processing yielding ‘global’ antenna coupling resistances in conditions of equalised port maximum voltages allowed consistent description of antenna coupling to plasma at different strap phasing, operational frequencies and applied GIMs. Comprehensive experimental characterisation of mutually coupled antenna straps in presence of plasma also provided a unique opportunity for in-depth verification of TOPICA computer simulations.

An all-solid-state CO2 laser driver

NASA Astrophysics Data System (ADS)

Birx, Daniel

1991-03-01

New, all-solid-state pulse generators are described which meet military requirements for an efficient, reliable pulsed power source to drive a space based CO2 laser. These SCR-commutated, nonlinear magnetic pulse compressors are fully-compatible with the present Spectra Technologies laser head design planned for use on LOWKATER. By employing SCRs rather than thyratron commutators, these pulsers should provide a significant increase in reliability over the current generation of pulsed power drivers. The first pulser which was designed and constructed was denoted COLD-I. COLD-I was designed to meet the original LOWKATER specifications and delivered at 150 joule, 20 kV pulse into a laser load at 10 to 20 Hz repetition rate. The second pulser, denoted COLD-II, was designed to provide a 45 joule, 500 nsec duration pulse at a voltage of 20 kV and a repetition rate of 1 kHz peak and 50 to 100 Hz average. The electrical efficiency was measured to be 80 percent with an input drive of 500 VDC. This pulse served as a design verification testbed for a third pulser, presently designed but not constructed and denoted COLD-III. COLD-III would be capable of producing 36 joules at the same pulse length and repetition rate at voltages of 20 kV. The Phase-II effort was a high risk, high payoff effort aimed at developing a light weight, high reliability RF power source for advanced RF CO2 laser heads under development. COLD-IV a Branched Magnetic RF Nonlinear Magnetic Pulse Compressor was built as a bread

Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

NASA Astrophysics Data System (ADS)

Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

2018-01-01

The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

Optimization of the R-SQUID noise thermometer

NASA Astrophysics Data System (ADS)

Seppä, Heikki

1986-02-01

The Josephson junction can be used to convert voltage into frequency and thus it can be used to convert voltage fluctuations generated by Johnson noise in a resistor into frequency fluctuations. As a consequence, the temperature of the resistor can be defined by measuring the variance of the frequency fluctuations. Unfortunately, the absolute determination of temperature by this approach is disturbed by several undesirable effects: a rolloff introduced by the bandwidth of the postdetection filter, additional noise caused by rf amplifiers, and a mixed noise effect caused by the nonlinearity of the Josephson junction together with rf noise in the tank circuit. Furthermore, the variance is a statistical quantity and therefore the limited number of frequency counts produces inaccuracy in a temperature measurement. In this work the total inaccuracy of the noise thermometer is analyzed and the optimal choice of the parameters is derived. A practical way to find the optimal conditions for the Josephson junction noise thermometer is discussed. The inspection shows that under the optimal conditions the total error is dependent only on the temperature under determination, the equivalent noise temperature of the preamplifier, the bias frequency of the SQUID, and the total time used for the measurement.

Modeling of Spark Gap Performance

DTIC Science & Technology

1983-06-01

MODELING OF SPARK GAP PERFORMANCE* A. L. Donaldson, R. Ness, M. Hagler, M. Kristiansen Department of Electrical Engineering and L. L. Hatfield...gas pressure, and chaJ:ging rate on the voltage stability of high energy spark gaps is discussed. Implications of the model include changes in...an extremely useful, and physically reasonable framework, from which the properties of spark gaps under a wide variety of experimental conditions

Design of single-winding energy-storage reactors for dc-to-dc converters using air-gapped magnetic-core structures

NASA Technical Reports Server (NTRS)

Ohri, A. K.; Wilson, T. G.; Owen, H. A., Jr.

1977-01-01

A procedure is presented for designing air-gapped energy-storage reactors for nine different dc-to-dc converters resulting from combinations of three single-winding power stages for voltage stepup, current stepup and voltage stepup/current stepup and three controllers with control laws that impose constant-frequency, constant transistor on-time and constant transistor off-time operation. The analysis, based on the energy-transfer requirement of the reactor, leads to a simple relationship for the required minimum volume of the air gap. Determination of this minimum air gap volume then permits the selection of either an air gap or a cross-sectional core area. Having picked one parameter, the minimum value of the other immediately leads to selection of the physical magnetic structure. Other analytically derived equations are used to obtain values for the required turns, the inductance, and the maximum rms winding current. The design procedure is applicable to a wide range of magnetic material characteristics and physical configurations for the air-gapped magnetic structure.

Intrinsic non-radiative voltage losses in fullerene-based organic solar cells

NASA Astrophysics Data System (ADS)

Benduhn, Johannes; Tvingstedt, Kristofer; Piersimoni, Fortunato; Ullbrich, Sascha; Fan, Yeli; Tropiano, Manuel; McGarry, Kathryn A.; Zeika, Olaf; Riede, Moritz K.; Douglas, Christopher J.; Barlow, Stephen; Marder, Seth R.; Neher, Dieter; Spoltore, Donato; Vandewal, Koen

2017-06-01

Organic solar cells demonstrate external quantum efficiencies and fill factors approaching those of conventional photovoltaic technologies. However, as compared with the optical gap of the absorber materials, their open-circuit voltage is much lower, largely due to the presence of significant non-radiative recombination. Here, we study a large data set of published and new material combinations and find that non-radiative voltage losses decrease with increasing charge-transfer-state energies. This observation is explained by considering non-radiative charge-transfer-state decay as electron transfer in the Marcus inverted regime, being facilitated by a common skeletal molecular vibrational mode. Our results suggest an intrinsic link between non-radiative voltage losses and electron-vibration coupling, indicating that these losses are unavoidable. Accordingly, the theoretical upper limit for the power conversion efficiency of single-junction organic solar cells would be reduced to about 25.5% and the optimal optical gap increases to 1.45-1.65 eV, that is, 0.2-0.3 eV higher than for technologies with minimized non-radiative voltage losses.

A Polyphenol-Enriched Fraction of Rose Oil Distillation Wastewater Inhibits Cell Proliferation, Migration and TNF-α-Induced VEGF Secretion in Human Immortalized Keratinocytes.

PubMed

Wedler, Jonas; Rusanov, Krasimir; Atanassov, Ivan; Butterweck, Veronika

2016-07-01

Water steam distillation of rose flowers separates the essential oil from the polyphenol-containing rose oil distillation wastewater. Recently, a strategy was developed to separate rose oil distillation wastewater into a polyphenol depleted water fraction and a polyphenol-enriched fraction [RF20-(SP-207)]. The objective of the present study was to investigate RF20-(SP-207) and fraction F(IV), augmented in quercetin and ellagic acid, for possible antiproliferative effects in immortalized human keratinocytes (HaCaT) since rose petals are known to contain compounds with potential antiproliferative activity.RF20-(SP-207) revealed dose-dependent antiproliferative activity (IC50 of 9.78 µg/mL). In a nontoxic concentration of 10 µg/mL, this effect was stronger than that of the two positive controls LY294002 (10 µM, PI3 K-inhibitor, 30 % inhibition) and NVP-BEZ235 (100 nM, dual PI3 K/mTOR inhibitor, 30 % inhibition) and clearly exceeded the antiproliferative action of quercetin (50 µM, 25 % inhibition) and ellagic acid (1 µM, 15 % inhibition). Time-lapse microscopy detected a significant impairment of cell migration of RF20-(SP-207) and F(IV). At concentrations of 10 µg/mL of both, extract and fraction, cell migration was strongly suppressed (51 % and 28 % gap closure, respectively, compared to 95 % gap closure 24 hours after control treatment). The suppression of cell migration was comparable to the positive controls LY294002, NVP-BEZ235, and quercetin. Furthermore, basal and TNF-α-stimulated VEGF-secretion was significantly reduced by RF20-(SP-207) and F(IV) at 10 µg/mL (44 % vs. untreated control).In conclusion, RF20-(SP-207) showed promising antiproliferative and antimigratory effects and could be developed as a supportive, therapy against hyperproliferation-involved skin diseases. Georg Thieme Verlag KG Stuttgart · New York.

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Generation of runaway electrons and X-ray emission during breakdown of atmospheric-pressure air by voltage pulses with an ∼0.5-μs front duration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kostyrya, I. D.; Tarasenko, V. F., E-mail: VFT@loi.hcei.tsc.ru

2015-03-15

Results are presented from experiments on the generation of runaway electron beams and X-ray emission in atmospheric-pressure air by using voltage pulses with an ∼0.5-μs front duration. It is shown that the use of small-curvature-radius spherical cathodes (or other cathodes with small curvature radii) decreases the intensity of the runaway electron beam and X-ray emission. It is found that, at sufficiently high voltages at the electrode gap (U{sub m} ∼ 100 kV), the gap breakdown, the formation of a spark channel, and the generation of a runaway electron beam occur over less than 10 ns. At high values of U{submore » m} behind the anode that were reached by increasing the cathode size and the electrode gap length, a supershort avalanche electron beam with a full width at half-maximum (FWHM) of up to ∼100 ps was detected. At voltages of ∼50 kV, the second breakdown regime was revealed in which a runaway electron beam with an FWHM of ∼2 ns was generated, whereas the FWHM of the X-ray pulse increased to ∼100 ns. It is established that the energy of the bulk of runaway electrons decreases with increasing voltage front duration and is ⩽30 keV in the first regime and ⩽10 keV in the second regime.« less

Origin of Non-Radiative Voltage Losses in Fullerene-Based Organic Solar Cells

NASA Astrophysics Data System (ADS)

Benduhn, Johannes; Tvingstedt, Kristofer; Piersimoni, Fortunato; Ullbrich, Sascha; Neher, Dieter; Spoltore, Donato; Vandewal, Koen

The open-circuit voltage of organic solar cells (OSCs) is low as compared to the optical gap of the absorber molecules, indicating high energy losses per absorbed photon. These voltage losses arise only partly due to necessity of an electron transfer event to dissociate the excitons. A large part of these voltage losses is due to recombination of photo-generated charge carriers, including inevitable radiative recombination. In this work, we study the non-radiative recombination losses and we find that they increase when the energy difference between charge transfer (CT) state and ground state decreases. This behavior is in agreement with the \\x9Denergy gap law for non-radiative transition\\x9D, which implies that internal conversion from CT state to ground state is facilitated by skeletal molecular vibrations. This intrinsic loss mechanism, which until now has not been thoroughly considered for OSCs, is different in its nature as compared to the commonly considered inorganic photovoltaic loss mechanisms of defect, surface, and Auger recombination. As a consequence, the theoretical upper limit for the power conversion efficiency of a single junction OSC reduces by 25% as compared to the Shockley-Queisser limit for an optimal optical gap of the main absorber between (1.45-1.65) eV.

Vacuum tube operation analysis under multi-harmonic driving and heavy beam loading effect in J-PARC RCS

NASA Astrophysics Data System (ADS)

Yamamoto, M.; Nomura, M.; Shimada, T.; Tamura, F.; Hara, K.; Hasegawa, K.; Ohmori, C.; Toda, M.; Yoshii, M.; Schnase, A.

2016-11-01

An rf cavity in the J-PARC RCS not only covers the frequency range of a fundamental acceleration pattern but also generates multi-harmonic rf voltage because it has a broadband impedance. However, analyzing the vacuum tube operation in the case of multi-harmonics is very complicated because many variables must be solved in a self-consistent manner. We developed a method to analyze the vacuum tube operation using a well-known formula and which includes the dependence on anode current for some variables. The calculation method is verified with beam tests, and the results indicate that it is efficient under condition of multi-harmonics with a heavy beam loading effect.

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films

NASA Technical Reports Server (NTRS)

Steinmann, Pierre A.; Spalvins, Talivaldis

1990-01-01

By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.