Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Highly controllable ICP etching of GaAs based materials for grating fabrication

NASA Astrophysics Data System (ADS)

Weibin, Qiu; Jiaxian, Wang

2012-02-01

Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 D 10 W, RF2 D 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

Reactive ion etching of GaN using BCl 3, BCl 3/Ar and BCl 3/ N 2 gas plasmas

NASA Astrophysics Data System (ADS)

Basak, D.; Nakanishi, T.; Sakai, S.

2000-04-01

Reactive ion etching (RIE) of GaN has been performed using BCl 3 and additives, Ar and N 2, to BCl 3 plasma. The etch rate, surface roughness and the etch profile have been investigated. The etch rate of GaN is found to be 104 nm/min at rf power of 200 W, pressure of 2 Pa, with 9.5 sccm flow rate of BCl 3. The addition of 5 sccm of Ar to 9.5 sccm of BCl 3 reduces the etch rate of GaN while the addition of N 2 does not influence the etch rate significantly. The RIE of GaN layer with BCl 3/Ar and BCl 3/N 2 results in a smoother surface compared to surfaces etched with BCl 3 only. The etched side-wall in BCl 3 plasma makes an angle of 60° with the normal surface, and the angle of inclination is more in cases of BCl 3/Ar and BCl 3/N 2 plasmas. The RIE induced damage to the surface is measured qualitatively by PL measurements. It is observed that the damage to the etched surfaces is similar for all the plasmas.

SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

NASA Astrophysics Data System (ADS)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (<30 sec), comparable with the annealing times necessary for dopant activation of p-GaN films and provides an opportunity for streamlining process flow. Plasma etching degrades contact quality on n-GaN films and this degradation has been found to increase with the rf bias levels (ion energies) used, most notably in films with higher doping levels. Immersion in 1:1 mixture of hydrochloric acid and de-ionized water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

Analysis of radiofrequency discharges in plasma

DOEpatents

Kumar, Devendra; McGlynn, Sean P.

1992-01-01

Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Analysis of radiofrequency discharges in plasma

DOEpatents

Kumar, D.; McGlynn, S.P.

1992-08-04

Separation of laser optogalvanic signals in plasma into two components: (1) an ionization rate change component, and (2) a photoacoustic mediated component. This separation of components may be performed even when the two components overlap in time, by measuring time-resolved laser optogalvanic signals in an rf discharge plasma as the rf frequency is varied near the electrical resonance peak of the plasma and associated driving/detecting circuits. A novel spectrometer may be constructed to make these measurements. Such a spectrometer would be useful in better understanding and controlling such processes as plasma etching and plasma deposition. 15 figs.

Ion beam sputter etching and deposition of fluoropolymers

NASA Technical Reports Server (NTRS)

Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

1978-01-01

Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

Dry etch challenges for CD shrinkage in memory process

NASA Astrophysics Data System (ADS)

Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

2015-03-01

Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

PubMed Central

2014-01-01

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Selective dry etching of III-V nitrides in Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}/Ar, ICi/Ar, and IBr/Ar

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vartuli, C.B.; Pearton, S.J.; MacKenzie, J.D.

1996-10-01

The selectivity for etching the binary (GaN, AlN, and InN) and ternary nitrides (InGaN and InAlN) relative to each other in Cl{sub 2}/Ar, CH{sub 4}/H{sub 2}/Ar, ICl/Ar, or IBr/Ar electron cyclotron resonance (ECR) plasmas, and Cl{sub 2}/Ar or CH{sub 4}/H{sub 2}/Ar reactive ion (RIE) plasmas was investigated. Cl-based etches appear to be the best choice for maximizing the selectivity of GaN over the other nitrides. GaN/AlN and GaN/InGaN etch rate ratios of {approximately} 10 were achieved at low RF power in Cl{sub 2}/Ar under ECR and RIE conditions, respectively. GaN/InN selectivity of 10 was found in ICl under ECR conditions.more » A relatively high selectivity (> 6) of InN/GaN was achieved in CH{sub 4}/H{sub 2}/Ar under ECR conditions at low RF powers (50 W). Since the high bond strengths of the nitrides require either high ion energies or densities to achieve practical etch rates it is difficult to achieve high selectivities.« less

Heterogeneous processes in CF4/O2 plasmas probed using laser-induced fluorescence of CF2

NASA Astrophysics Data System (ADS)

Hansen, S. G.; Luckman, G.; Nieman, George C.; Colson, Steven D.

1990-09-01

Laser-induced fluorescence of CF2 is used to monitor heterogeneous processes in ≊300 mTorr CF4/O2 plasmas. CF2 is rapidly removed at fluorinated copper and silver surfaces in 13.56-MHz rf discharges as judged by a distinct dip in its spatial distribution. These metals, when employed as etch masks, are known to accelerate plasma etching of silicon, and the present results suggest catalytic dehalogenation of CF2 is involved in this process. In contrast, aluminum and silicon dioxide exhibit negligible reactivity with CF2, which suggests that aluminum masks will not appreciably accelerate silicon etching and that ground state CF2 does not efficiently etch silicon dioxide. Measurement of CF2 decay in a pulsed discharge coupled with direct laser sputtering of metal into the gas phase indicates the interaction between CF2 and the active metals is purely heterogeneous. Aluminum does, however, exhibit homogeneous reactivity with CF2. Redistribution of active metal by plasma sputtering readily occurs; silicon etch rates may also be enhanced by the metal's presence on the silicon surface. Polymers contribute CF2 to the plasma as they etch. The observation of an induction period suggests fluorination of the polymer surface is the first step in its degradation. Polymeric etch masks can therefore depress the silicon etch rate by removal of F atoms, the primary etchants.

Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption

NASA Astrophysics Data System (ADS)

Kogelschatz, M.; Cunge, G.; Sadeghi, N.

2006-03-01

SiCl{x} radicals, the silicon etching by-products, are playing a major role in silicon gate etching processes because their redeposition on the wafer leads to the formation of a SiOCl{x} passivation layer on the feature sidewalls, which controls the final shape of the etching profile. These radicals are also the precursors to the formation of a similar layer on the reactor walls, leading to process drifts. As a result, the understanding and modelling of these processes rely on the knowledge of their densities in the plasma. Actinometry technique, based on optical emission, is often used to measure relative variations of the density of the above mentioned radicals, even if it is well known that the results obtained with this technique might not always be reliable. To determine the validity domain of actinometry in industrial silicon-etching high density plasmas, we measure the RF source power and pressure dependences of the absolute densities of SiCl{x} (x=0{-}2), SiF and SiBr radicals, deduced from UV broad band absorption spectroscopy. These results are compared to the evolution of the corresponding actinometry signals from these radicals. It is shown that actinometry predicts the global trends of the species density variations when the RF power is changed at constant pressure (that is to say when only the electron density changes) but it completely fails if the gas pressure, hence the electron temperature, changes.

Electron Heating Mode Transitions in Nitrogen (13.56 and 40.68) MHz RF-CCPs

NASA Astrophysics Data System (ADS)

Erozbek Gungor, Ummugul; Bilikmen, Sinan Kadri; Akbar, Demiral

2015-09-01

Capacitively coupled radio frequency plasmas (RF-CCPs) are commonly used in plasma material processing. Parametrical structure of the plasma determines the demands of processing applications. For example; high density plasmas in gamma mode are mostly preferred for etching applications while stabile plasmas in gamma mode are usually used in sputtering applications. For this reason, characterization of the plasma is very essential before surface modification of the materials. In this work, analysis of electron heating mode transition in high frequency (40.68 MHz) RF-CCP was deeply investigated. The plasma was generated in a home-made (500 × 400 mm2) stainless steel cylindrical reactor in which two identical (200 mm in diameter) electrodes were placed with 40 mm interval. In addition, L-type automatic matching network system was connected to the 40.68 MHz RF generator to get high accuracy. Moreover, the pure (99.995 %) nitrogen was used as an activation gas on account of having an appreciable impression in plasma processing applications. Furthermore, diagnostic measurements of the plasma were done by using the Impedans Langmuir single and double probe systems. It was found that two transition points; α- γ (pressure dependent) and γ- α (RF power dependent) were observed in both medium and high RF-CCPs. As a result, the α- γ pressure transition increased, whereas the γ- α power transition remained constant by changing the RF frequency sources.

Method of plasma etching Ga-based compound semiconductors

DOEpatents

Qiu, Weibin; Goddard, Lynford L.

2012-12-25

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tasaka, Akimasa, E-mail: aki-tasaka-load@yahoo.co.jp; Kotaka, Yuki; Oda, Atsushi

2014-09-01

In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the numbermore » of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.« less

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Technique for etching monolayer and multilayer materials

DOEpatents

Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

2015-10-06

A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

NASA Astrophysics Data System (ADS)

Altamore, C.; Tringali, C.; Sparta', N.; Di Marco, S.; Grasso, A.; Ravesi, S.

2010-02-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (105) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 101 Hz to 106 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl2/Ar chemistry. The relationship between the etch rate and the Cl2/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl2/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogdanova, M. A.; Zyryanov, S. M.; Faculty of Physics, Moscow State University, MSU, Moscow

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtualmore » IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and intensity of low-energy peaks in IED is discussed compared to ion charge-exchange collisions. Obviously, the extrapolation of the “virtual IED sensor” approach to higher pressures requires developing some other sheath models, taking into account both ion and electron collisions and probably including even a model of the whole plasma volume instead of plasma sheath one.« less

Exploration of suitable dry etch technologies for directed self-assembly

NASA Astrophysics Data System (ADS)

Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

2012-03-01

Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

Physics and chemistry of complex oxide etching and redeposition control

NASA Astrophysics Data System (ADS)

Margot, Joëlle

2012-10-01

Since its introduction in the 1970s, plasma etching has become the universal method for fine-line pattern transfer onto thin films and is anticipated to remain so in foreseeable future. Despite many success stories, plasma etching processes fail to meet the needs for several of the newest materials involved in advanced devices for photonic, electronic and RF applications like ferroelectrics, electro-optic materials, high-k dielectrics, giant magnetoresistance materials and unconventional conductors. In this context, the work achieved over the last decade on the etching of multicomponent oxides thin films such as barium strontium titanate (BST), strontium titanate (STO) and niobate of calcium and barium (CBN) will be reviewed. These materials present a low reactivity with usual etching gases such as fluorinated and chlorinated gases, their etching is mainly governed by ion sputtering and reactive gases sometimes interact with surface materials to form compounds that inhibit etching. The etching of platinum will also be presented as an example of unconventional conductor materials for which severe redeposition limits the achievable etching quality. Finally, it will be shown how simulation can help to understand the etching mechanisms and to define avenues for higher quality patterning.

Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, Svetozar; Upadhyay, Janardan; Vuskovic, Leposava

2017-12-26

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the innermore » wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.« less

Apparatus and method for plasma processing of SRF cavities

NASA Astrophysics Data System (ADS)

Upadhyay, J.; Im, Do; Peshl, J.; Bašović, M.; Popović, S.; Valente-Feliciano, A.-M.; Phillips, L.; Vušković, L.

2016-05-01

An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring- and disk-type samples and the etch rate of these samples was measured.

Plasma sterilization of Geobacillus Stearothermophilus by O{mathsf2}:N{mathsf2} RF inductively coupled plasma

NASA Astrophysics Data System (ADS)

Kylián, O.; Sasaki, T.; Rossi, F.

2006-05-01

The aim of this work is to identify the main process responsible for sterilization of Geobacillus Stearothermophilus spores in O{2}:N{2} RF inductively coupled plasma. In order to meet this objective the sterilization efficiencies of discharges in mixtures differing in the initial O{2}/N{2} ratios are compared with plasma properties and with scanning electron microscopy images of treated spores. According to the obtained results it can be concluded that under our experimental conditions the time needed to reach complete sterilization is more related to O atom density than UV radiation intensity, i.e. complete sterilization is not related only to DNA damage as in UV sterilization but more likely to the etching of the spore.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

NASA Astrophysics Data System (ADS)

Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

2007-05-01

The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

PULSION® HP: Tunable, High Productivity Plasma Doping

NASA Astrophysics Data System (ADS)

Felch, S. B.; Torregrosa, F.; Etienne, H.; Spiegel, Y.; Roux, L.; Turnbaugh, D.

2011-01-01

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism—deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

Exploring the wake of a dust particle by a continuously approaching test grain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Hendrik, E-mail: hjung@physik.uni-kiel.de; Greiner, Franko; Asnaz, Oguz Han

2015-05-15

The structure of the ion wake behind a dust particle in the plasma sheath of an rf discharge is studied in a two-particle system. The wake formation leads to attractive forces between the negatively charged dust and can cause a reduction of the charge of a particle. By evaluating the dynamic response of the particle system to small external perturbations, these quantities can be measured. Plasma inherent etching processes are used to achieve a continuous mass loss and hence an increasing levitation height of the lower particle, so that the structure of the wake of the upper particle, which ismore » nearly unaffected by etching, can be probed. The results show a significant modification of the wake structure in the plasma sheath to one long potential tail.« less

A study of increasing radical density and etch rate using remote plasma generator system

NASA Astrophysics Data System (ADS)

Lee, Jaewon; Kim, Kyunghyun; Cho, Sung-Won; Chung, Chin-Wook

2013-09-01

To improve radical density without changing electron temperature, remote plasma generator (RPG) is applied. Multistep dissociation of the polyatomic molecule was performed using RPG system. RPG is installed to inductively coupled type processing reactor; electrons, positive ions, radicals and polyatomic molecule generated in RPG and they diffused to processing reactor. The processing reactor dissociates the polyatomic molecules with inductively coupled power. The polyatomic molecules are dissociated by the processing reactor that is operated by inductively coupled power. Therefore, the multistep dissociation system generates more radicals than single-step system. The RPG was composed with two cylinder type inductively coupled plasma (ICP) using 400 kHz RF power and nitrogen gas. The processing reactor composed with two turn antenna with 13.56 MHz RF power. Plasma density, electron temperature and radical density were measured with electrical probe and optical methods.

Surface Modification of Direct-Current and Radio-Frequency Oxygen Plasma Treatments Enhance Cell Biocompatibility

PubMed Central

Wang, Rex C.-C.; Liu, Cheng; Yang, Chyun-Yu

2017-01-01

The sand-blasting and acid etching (SLA) method can fabricate a rough topography for mechanical fixation and long-term stability of titanium implant, but can not achieve early bone healing. This study used two kinds of plasma treatments (Direct-Current and Radio-Frequency plasma) to modify the SLA-treated surface. The modification of plasma treatments creates respective power range and different content functional OH groups. The results show that the plasma treatments do not change the micron scale topography, and plasma-treated specimens presented super hydrophilicity. The X-ray photoelectron spectroscopy (XPS)-examined result showed that the functional OH content of the RF plasma-treated group was higher than the control (SLA) and DC treatment groups. The biological responses (protein adsorption, cell attachment, cell proliferation, and differentiation) promoted after plasma treatments, and the cell responses, have correlated to the total content of amphoteric OH groups. The experimental results indicated that plasma treatments can create functional OH groups on SLA-treated specimens, and the RF plasma-treated SLA implant thus has potential for achievement of bone healing in early stage of implantation. PMID:29068417

Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates

DTIC Science & Technology

2018-01-01

conditions (pending input from University of California San Diego (UCSD)/Nano3). After dose testing, resist development and bake SF6 etching is done...conditions. After the resist development and bake , a 2-second descum oxygen-plasma exposure is performed followed by RF sputtering at 100 watts in argon of

Effects of rf power on chemical composition and surface roughness of glow discharge polymer films

NASA Astrophysics Data System (ADS)

Zhang, Ling; He, Xiaoshan; Chen, Guo; Wang, Tao; Tang, Yongjian; He, Zhibing

2016-03-01

The glow discharge polymer (GDP) films for laser fusion targets were successfully fabricated by plasma enhanced chemical vapor deposition (PECVD) at different radio frequency (rf) powers. The films were deposited using trans-2-butene (T2B) mixed with hydrogen as gas sources. The composition and state of plasma were diagnosed by quadrupole mass spectrometer (QMS) and Langmuir probe during the deposition process. The composition, surface morphology and roughness were investigated by Fourier transform infrared spectroscopy (FTIR), scanning electron microscope (SEM) and white-light interferometer (WLI), respectively. Based on these observation and analyses, the growth mechanism of defects in GDP films were studied. The results show that, at low rf power, there is a larger probability for secondary polymerization and formation of multi-carbon C-H species in the plasma. In this case, the surface of GDP film turns to be cauliflower-like. With the increase of rf power, the degree of ionization is high, the relative concentration of smaller-mass hydrocarbon species increases, while the relative concentration of larger-mass hydrocarbon species decreases. At higher rf power, the energy of smaller-mass species are high and the etching effects are strong correspondingly. The GDP film's surface roughness shows a trend of decrease firstly and then increase with the increasing rf power. At rf power of 30 W, the surface root-mean-square roughness (Rq) drops to the lowest value of 12.8 nm, and no ;void; defect was observed.

Large area atmospheric-pressure plasma jet

DOEpatents

Selwyn, Gary S.; Henins, Ivars; Babayan, Steve E.; Hicks, Robert F.

2001-01-01

Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode. Because of the atmospheric pressure operation, there is a negligible density of ions surviving for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike the situation for low-pressure plasma sources and conventional plasma processing methods.

Atmospheric-pressure plasma jet

DOEpatents

Selwyn, Gary S.

1999-01-01

Atmospheric-pressure plasma jet. A .gamma.-mode, resonant-cavity plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two concentric cylindrical electrodes are employed to generate a plasma in the annular region therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly shaping the rf-powered electrode. Because of the atmospheric pressure operation, no ions survive for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike low-pressure plasma sources and conventional plasma processing methods.

Influences of the cold atmospheric plasma jet treatment on the properties of the demineralized dentin surfaces

NASA Astrophysics Data System (ADS)

Xiaoming, ZHU; Heng, GUO; Jianfeng, ZHOU; Xiaofei, ZHANG; Jian, CHEN; Jing, LI; Heping, LI; Jianguo, TAN

2018-04-01

Improvement of the bonding strength and durability between the dentin surface and the composite resin is a challenging job in dentistry. In this paper, a radio-frequency atmospheric-pressure glow discharge (RF-APGD) plasma jet is employed for the treatment of the acid-etched dentin surfaces used for the composite restoration. The properties of the plasma treated dentin surfaces and the resin-dentin interfaces are analyzed using the x-ray photoemission spectroscopy, contact angle goniometer, scanning electron microscope and microtensile tester. The experimental results show that, due to the abundant chemically reactive species existing in the RF-APGD plasma jet under a stable and low energy input operating mode, the contact angle of the plasma-treated dentin surfaces decreases to a stable level with the increase of the atomic percentage of oxygen in the specimens; the formation of the long resin tags in the scattered clusters and the hybrid layers at the resin-dentin interfaces significantly improve the bonding strength and durability. These results indicate that the RF-APGD plasma jet is an effective tool for modifying the chemical properties of the dentin surfaces, and for improving the immediate bonding strength and the durability of the resin-dentin bonding in dentistry.

Ion Energy and Ion Flux Distributions of CF4/Ar/O2 Inductively Coupled Plasmas in a GEC Cell

NASA Technical Reports Server (NTRS)

Rao, M. V. V. S.; Cruden, Brett; Sharma, Surendra; Meyyappan, Meyya

2001-01-01

Knowledge of ion kinetics in plasma processing gas mixtures, such as CF4:Ar:O2, is important for understanding plasma assisted etching and deposition of materials. Ion energies and ion fluxes were measured in this mixture for 80:10:10, 60:20:20, and 40:30:30 mixture ratios in the pressure range of 10-50 mTorr, and at 200 and 300 W of RF power. Ions from plasma, sampled through a 10 micron orifice in the center of the lower plane electrode, were energy and mass analyzed by a combination of electrostatic energy and quadrupole mass filters. CFx(+) (x = 1 - 3), F2(+), F(+), C(+) from CF4, Ar(+) from Ar, and O2(+) and O(+) from O2, and by-product ions SiFx(+)(x = 1 - 3) from etching of quartz coupling window, COFx(+)(x = 1 - 3), CO(+), CO2(+), and OF(+) were detected. In all conditions ion flux decreases with increase of pressure but increase with increase of RF power. Ar(+) signal decreases with increase of pressure while CF3(+), which is the dominant ion at all conditions, increases with increase in pressure. The loss mechanism for Ar(+) and increase of CF3(+) is due to large cross section for Ar(+) + CF4 yields Ar + CF3(+) + F. Ion energies, which range from 15-25 eV depending on plasma operating conditions, are nearly Gaussian. By-product ion signals are higher at lower pressures indicating stronger plasma interaction with quartz window.

Fabrication of self-aligned, nanoscale, complex oxide varactors

NASA Astrophysics Data System (ADS)

Fu, Richard X.; Toonen, Ryan C.; Hirsch, Samuel G.; Ivill, Mathew P.; Cole, Melanie W.; Strawhecker, Kenneth E.

2015-01-01

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Ripple formation on Si surfaces during plasma etching in Cl2

NASA Astrophysics Data System (ADS)

Nakazaki, Nobuya; Matsumoto, Haruka; Sonobe, Soma; Hatsuse, Takumi; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2018-05-01

Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.

Deterministic Nanopatterning of Diamond Using Electron Beams.

PubMed

Bishop, James; Fronzi, Marco; Elbadawi, Christopher; Nikam, Vikram; Pritchard, Joshua; Fröch, Johannes E; Duong, Ngoc My Hanh; Ford, Michael J; Aharonovich, Igor; Lobo, Charlene J; Toth, Milos

2018-03-27

Diamond is an ideal material for a broad range of current and emerging applications in tribology, quantum photonics, high-power electronics, and sensing. However, top-down processing is very challenging due to its extreme chemical and physical properties. Gas-mediated electron beam-induced etching (EBIE) has recently emerged as a minimally invasive, facile means to dry etch and pattern diamond at the nanoscale using oxidizing precursor gases such as O 2 and H 2 O. Here we explain the roles of oxygen and hydrogen in the etch process and show that oxygen gives rise to rapid, isotropic etching, while the addition of hydrogen gives rise to anisotropic etching and the formation of topographic surface patterns. We identify the etch reaction pathways and show that the anisotropy is caused by preferential passivation of specific crystal planes. The anisotropy can be controlled by the partial pressure of hydrogen and by using a remote RF plasma source to radicalize the precursor gas. It can be used to manipulate the geometries of topographic surface patterns as well as nano- and microstructures fabricated by EBIE. Our findings constitute a comprehensive explanation of the anisotropic etch process and advance present understanding of electron-surface interactions.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Tantalum Etching with an Atmospheric Pressure Plasma Jet

NASA Astrophysics Data System (ADS)

Teslow, Hilary; Herrmann, Hans; Rosocha, Louis

2002-10-01

The APPJ is a non-thermal, atmospheric-pressure, glow discharge. A feedgas, composed of an inert carrier gas (e.g., He) and small concentrations of additives (e.g., O2, or CF4), flows between closely spaced electrodes powered at 13.56 MHz rf in a coaxial or parallel plate arrangement. The plasma has Te ˜ 2 eV and ne ˜ 10^11 cm-3. Electrons are not in thermal equilibrium with ions and neutrals: the electrons are ``hot", while the overall gas temperature is quite ``cold", typically 50-300 C. In the plasma, the gas is excited, dissociated or ionized by energetic electron impact. As the gas exits the discharge volume, ions and electrons are rapidly lost by recombination, leaving metastables (e.g. O2*, He*) and radicals (e.g. O, F, OF, O2F, CFO). These reactive species are then directed onto a surface to be processed. The APPJ has been developed for decontaminating nuclear, chemical, and biological agents. Atomic fluorine, and possibly other reactive species, can be used to convert actinides (e.g., U and Pu), into volatile fluorides (e.g., UF6, PuF6) that can be trapped, resulting in significant volume reduction of radioactive waste. In this talk, we will present results on using Ta as a surrogate for Pu in He/O2/CF4 etching plasmas. Results of experimental measurements of Ta etch rates for various gas mixtures and plasma jet standoff distance will be compared with plasma chemistry modeling of the concentrations of several active species produced in the plasma.

Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

NASA Astrophysics Data System (ADS)

Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

2004-05-01

A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

Research and Development for Continued Performance Improvement in Flexible a-Si PV

DTIC Science & Technology

2010-12-14

accomplished, however, at low temperatures silicides tend to form on the surface of the filament, which affected filament lifetime and deposition rate...considered. Titanium Nitride, sputtered As an alternative to the hot wire deposition of silicon, samples were prepared with various thicknesses of...Silicon 21 Insitu DC Sputtering Titanium Nitride 22 Metal Machine 2 ឈ> RF Oxygen Plasma Silicon Dioxide 20. Oxygen Etch Table A.4.1 Open circuit

Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems

NASA Technical Reports Server (NTRS)

Cappelli, Mark A.

1999-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.

Comparison of Langmuir probe and multipole resonance probe measurements in argon, hydrogen, nitrogen, and oxygen mixtures in a double ICP discharge

NASA Astrophysics Data System (ADS)

Fiebrandt, Marcel; Oberberg, Moritz; Awakowicz, Peter

2017-07-01

The results of a Multipole Resonance Probe (MRP) are compared to a Langmuir probe in measuring the electron density in Ar, H2, N2, and O2 mixtures. The MRP was designed for measurements in industry processes, i.e., coating or etching. To evaluate a possible influence on the MRP measurement due to molecular gases, different plasmas with increasing molecular gas content in a double inductively coupled plasma at 5 Pa and 10 Pa at 500 W are used. The determined electron densities from the MRP and the Langmuir probe slightly differ in H2 and N2 diluted argon plasmas, but diverge significantly with oxygen. In pure molecular gas plasmas, electron densities measured with the MRP are always higher than those measured with the Langmuir Probe, in particular, in oxygen containing mixtures. The differences can be attributed to etching of the tungsten wire in the Ar:O2 mixtures and rf distortion in the pure molecular discharges. The influence of a non-Maxwellian electron energy distribution function, negative ions or secondary electron emission seems to be of no or only minor importance.

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

NASA Technical Reports Server (NTRS)

Sharma, S. P.; Rao, M. V. V. S.; Meyyappan, Meyya

2000-01-01

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Study of copper-free back contacts to thin film cadmium telluride solar cells

NASA Astrophysics Data System (ADS)

Viswanathan, Vijay

The goals of this project are to study Cu free back contact alternatives for CdS/CdTe thin film solar cells, and to research dry etching for CdTe surface preparation before contact application. In addition, an attempt has been made to evaluate the stability of some of the contacts researched. The contacts studied in this work include ZnTe/Cu2Te, Sb2Te 3, and Ni-P alloys. The ZnTe/Cu2Te contact system is studied as basically an extension of the earlier work done on Cu2Te at USF. RF sputtering from a compound target of ZnTe and Cu2Te respectively deposits these layers on etched CdTe surface. The effect of Cu2Te thickness and deposition temperature on contact and cell performance will be studied with the ZnTe depositions conditions kept constant. C-V measurements to study the effect of contact deposition conditions on CdTe doping will also be performed. These contacts will then be stressed to high temperatures (70--100°C) and their stability with stress time is analyzed. Sb2Te3 will be deposited on glass using RF sputtering, to study film properties with deposition temperature. The Sb2Te 3 contact performance will also be studied as a function of the Sb 2Te3 deposition temperature and thickness. The suitability of Ni-P alloys for back contacts to CdTe solar cells was studied by forming a colloidal mixture of Ni2P in graphite paste. The Ni-P contacts, painted on Br-methanol etched CdTe surface, will be studied as a function of Ni-P concentration (in the graphite paste), annealing temperature and time. Some of these cells will undergo temperature stress testing to determine contact behavior with time. Dry etching of CdTe will be studied as an alternative for wet etching processes currently used for CdTe solar cells. The CdTe surface is isotropically etched in a barrel reactor in N2, Ar or Ar:O 2 ambient. The effect of etching ambient, pressure, plasma power and etch time on contact performance will be studied.

Optimization of reactive-ion etching (RIE) parameters for fabrication of tantalum pentoxide (Ta2O5) waveguide using Taguchi method

NASA Astrophysics Data System (ADS)

Muttalib, M. Firdaus A.; Chen, Ruiqi Y.; Pearce, S. J.; Charlton, Martin D. B.

2017-11-01

In this paper, we demonstrate the optimization of reactive-ion etching (RIE) parameters for the fabrication of tantalum pentoxide (Ta2O5) waveguide with chromium (Cr) hard mask in a commercial OIPT Plasmalab 80 RIE etcher. A design of experiment (DOE) using Taguchi method was implemented to find optimum RF power, mixture of CHF3 and Ar gas ratio, and chamber pressure for a high etch rate, good selectivity, and smooth waveguide sidewall. It was found that the optimized etch condition obtained in this work were RF power = 200 W, gas ratio = 80 %, and chamber pressure = 30 mTorr with an etch rate of 21.6 nm/min, Ta2O5/Cr selectivity ratio of 28, and smooth waveguide sidewall.

High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

PubMed

Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

2013-12-11

High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries.

X Ray Mask Of Gold-Carbon Mixture Absorber On BCN Compound Substrate Fabricated By Plasma Processes

NASA Astrophysics Data System (ADS)

Aiyer, Chandrasekhar R.; Itoh, Satoshi; Yamada, Hitomi; Morita, Shinzo; Hattori, Shuzo

1988-06-01

X-ray mask fabrication based on BCN compound membrane and gold containing polymeric carbon ( Au-C ) absorber by totally dry processes is proposed. The Au-C films were depo-sited by plasma polymerization of propylene or styrene monomers and co-evaporation of gold. These films have 2 to 5 times higher etching rate than that of pure gold for 09 RIE, depending on the Au content. The stress in the films could be reduced to 1.9 E 7 N/m2 by annealing. The BCN films were deposited on silicon wafers by rf (13.56 MHz) plasma CVD with diborane, methane and nitrogen as source gases at typical deposition rate of 30 nm/min. The optical (633nm) and X ray (Pd L~) transparencies were nearly 80% for film thickness of 6 um. Patterning of Au-C was achieved by using tungsten as intermediate layer and PMMA electron beam resist. CF4 RIE was used to etch the tungsten layer which in turn acted as mask for the gold carbide 02 RIE. The process parameters and the characteristics of the Au-C and BCN films are presented.

CF2 Detection in Radio-Frequency Ar/CHF3 Plasmas by Fourier Transform Infrared Spectroscopy

NASA Technical Reports Server (NTRS)

Kim, J. S.; Rao, M. V. V. S.; Cappelli, M. A.; Sharma, S. P.

1999-01-01

CFx radicals, in particular CF2, are instrumental in anisotropic etching of SiO2. In order to optimize the CFx radical population in a given process environment, it is imperative that we understand their production mechanism. Towards this goal, we have conducted a series of quantitative measurements of CF2 radicals in low pressure RF plasmas similar to those used in SiO2 etching. In this study, we present preliminary results for Ar/CHF3 plasmas operating at pressures ranging from 10-50 mTorr and powers ranging from 100-500 W in the GEC reference cell, modified for inductive (transformer) coupling. Fourier transform infrared (FTIR) spectroscop) is used to observe the absorption features of the CF2 radical in the 1114 cm-1 and 1096 cm-1 spectral regions. The FTIR spectrometer is equipped with a high-sensitivity mercury cadmium telluride (MCT) detector and has afixed resolution of 0.125 cm- 1. The CF2 concentrations are measured for a range of operating pressures and discharge power levels, and are compared to measurements of the relative CF2 concentrations made by mass spectrometry using the method of appearance potential for radical selectivity.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Antireflective hydrophobic si subwavelength structures using thermally dewetted Ni/SiO2 nanomask patterns.

PubMed

Joo, Dong Hyuk; Leem, Jung Woo; Yu, Jae Su

2011-11-01

We report the disordered silicon (Si) subwavelength structures (SWSs), which are fabricated with the use of inductively coupled plasma (ICP) etching in SiCl4 gas using nickel/silicon dioxide (Ni/SiO2) nanopattens as the etch mask, on Si substrates by varying the etching parameters for broadband antireflective and self-cleaning surfaces. For the fabricated Si SWSs, the antireflection characteristics are experimentally investigated and a theoretical analysis is made based on the rigorous coupled-wave analysis method. The desirable dot-like Ni nanoparticles on SiO2/Si substrates are formed by the thermal dewetting process of Ni films at 900 degrees C. The truncated cone shaped Si SWS with a high average height of 790 +/- 23 nm, which is fabricated by ICP etching with 5 sccm SiCl4 at 50 W RF power with additional 200 W ICP power under 10 mTorr process pressure, exhibits a low average reflectance of approximately 5% over a wide wavelength range of 450-1050 nm. The water contact angle of 110 degrees is obtained, indicating a hydrophobic surface. The calculated reflectance results are also reasonably consistent with the experimental data.

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

DOEpatents

Molvik, Arthur W.; Ellingboe, Albert R.

1998-01-01

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

DOEpatents

Molvik, A.W.; Ellingboe, A.R.

1998-10-20

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18--0.35 mm or less. 16 figs.

A review on plasma-etch-process induced damage of HgCdTe

NASA Astrophysics Data System (ADS)

Liu, Lingfeng; Chen, Yiyu; Ye, Zhenhua; Ding, Ruijun

2018-05-01

Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.

Paraelectric gas flow accelerator

NASA Technical Reports Server (NTRS)

Sherman, Daniel M. (Inventor); Wilkinson, Stephen P. (Inventor); Roth, J. Reece (Inventor)

2001-01-01

A substrate is configured with first and second sets of electrodes, where the second set of electrodes is positioned asymmetrically between the first set of electrodes. When a RF voltage is applied to the electrodes sufficient to generate a discharge plasma (e.g., a one-atmosphere uniform glow discharge plasma) in the gas adjacent to the substrate, the asymmetry in the electrode configuration results in force being applied to the active species in the plasma and in turn to the neutral background gas. Depending on the relative orientation of the electrodes to the gas, the present invention can be used to accelerate or decelerate the gas. The present invention has many potential applications, including increasing or decreasing aerodynamic drag or turbulence, and controlling the flow of active and/or neutral species for such uses as flow separation, altering heat flow, plasma cleaning, sterilization, deposition, etching, or alteration in wettability, printability, and/or adhesion.

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Effect of nitrogen-containing plasma on adherence, friction, and wear of radiofrequency-sputtered titanium carbide coatings

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1979-01-01

Friction and wear experiments on 440C steel surfaces that were rf sputtered with titanium carbide when a small percentage of nitrogen was added to the plasma were conducted. Both X-ray photoelectron spectroscopy and X-ray diffraction were used to analyze the resultant coatings. Results indicate that the small partial pressure of nitrogen (approximately 0.5 percent) markedly improves the adherence, friction, and wear properties when compared with coatings applied to sputter-etched surfaces, oxidized surfaces, or in the presence of a small oxygen partial pressure. The improvements are related to the formation of an interface containing a mixture of the nitrides of titanium and iron, which are harder than their corresponding oxides.

First results on plasma-surface interactions in the tokamak de varennes

NASA Astrophysics Data System (ADS)

Terreault, B.; Boucher, C.; Paynter, R. W.; Ross, G. G.; ThÉriault, D.; Abel, G.; Boivin, R.; Bolton, R. A.; Castracane, J.; Chevalier, G.; Couture, P.; Décoste, R.; Demers, Y.; Dimoff, K.; Glaude, V.; Gregory, B. C.; Haddad, E.; Janicki, C.; Kalnavarns, J.; Lachambre, J. L.; Mai, H. H.; Neufeld, C. R.; Pacher, H. D.; Pacher, G. W.; Richard, N.; Saint-Jacques, R. G.; Saint-Onge, M.; Simm, C.; Stansfield, B. L.; Veilleux, G.; Whyte, D.; Zuzak, W.

1989-04-01

Results of plasma-surface interaction studies made during the early phases of operation of the Tokamak de Varennes are summarized. It was found that the desorption of molecules from the internal walls by UV radiation can be used to reduce the base pressure. Auger depth profiling of stainless steel (SS) samples exposed to hydrogen discharge cleaning has been performed. Glow discharges at about 0.1 mbar etch the surface carbon and oxide at a rate of 0.5 nm/h. RF-glow discharges at 10 -3 mbar result in a rapid reduction of the oxide and its replacement by a carbide layer (the graphite limiters being the source of the carbon). Long-term wall samples of SS and Si have been profiled by Auger and nuclear analysis. The SS sample has a similar composition to that exposed to the RF-glow conditioning. The Si sample is covered by a 3 nm deposit of metals, C and O, and contains 10 16 H/cm 2 within 30 nm of the surface; this dose and width are consistent with the history of the sample.

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe

NASA Astrophysics Data System (ADS)

Green, R. T.; Luxmoore, I. J.; Lee, K. B.; Houston, P. A.; Ranalli, F.; Wang, T.; Parbrook, P. J.; Uren, M. J.; Wallis, D. J.; Martin, T.

2010-07-01

Incorporating GaN capping layers in conjunction with recessing has been identified as a means to maximize the high frequency performance of AlGaN/GaN high electron mobility transistors (HEMTs). Doping the cap heavily n-type is required in order to ensure minimal loss of carriers from the channel. Using a SiCl4/SF6 dry etch plasma recipe, 250 nm gate length HEMTs with recess lengths varying from 300 nm to 5 μm are fabricated. Heavily doped n+GaN caps enabled contact resistances of 0.3 Ω mm to be achieved. Recessing using a SiCl4/SF6 recipe does not introduce significant numbers of bulk traps. Gate recessing in conjunction with Si3N4 passivation reduces rf dispersion to negligible levels.

Correlation study of actual temperature profile and in-line metrology measurements for within-wafer uniformity improvement and wafer edge yield enhancement (Conference Presentation)

NASA Astrophysics Data System (ADS)

Fang, Fang; Vaid, Alok; Vinslava, Alina; Casselberry, Richard; Mishra, Shailendra; Dixit, Dhairya; Timoney, Padraig; Chu, Dinh; Porter, Candice; Song, Da; Ren, Zhou

2018-03-01

It is getting more important to monitor all aspects of influencing parameters in critical etch steps and utilize them as tuning knobs for within-wafer uniformity improvement and wafer edge yield enhancement. Meanwhile, we took a dive in pursuing "measuring what matters" and challenged ourselves for more aspects of signals acquired in actual process conditions. Among these factors which are considered subtle previously, we identified Temperature, especially electrostatic chuck (ESC) Temperature measurement in real etch process conditions have direct correlation to in-line measurements. In this work, we used SensArray technique (EtchTemp-SE wafer) to measure ESC temperature profile on a 300mm wafer with plasma turning on to reproduce actual temperature pattern on wafers in real production process conditions. In field applications, we observed substantial correlation between ESC temperature and in-line optical metrology measurements and since temperature is a process factor that can be tuning through set-temperature modulations, we have identified process knobs with known impact on physical profile variations. Furthermore, ESC temperature profile on a 300mm wafer is configured as multiple zones upon radius and SensArray measurements mechanism could catch such zonal distribution as well, which enables detailed temperature modulations targeting edge ring only where most of chips can be harvested and critical zone for yield enhancement. Last but not least, compared with control reference (ESC Temperature in static plasma-off status), we also get additional factors to investigate in chamber-to-chamber matching study and make process tool fleet match on the basis really matters in production. KLA-Tencor EtchTemp-SE wafer enables Plasma On wafer temperature monitoring of silicon etch process. This wafer is wireless and has 65 sensors with measurement range from 20 to 140°C. the wafer is designed to run in real production recipe plasma on condition with maximum RF power up to 7KW. The wafer surface is coated with Yttrium oxide film which allows Silicon Etch chemistry. At Fab-8, we carried investigations in 14 nm FEOL critical etch process which has direct impact on yield, using SensorArray EtchTemp-SE wafer, we measured ESC temperature profile across multiple chambers, for both plasma on and plasma off, promising results achieved on chamber temperature signature identification, guideline for chamber to chamber matching improvement. Correlation between wafer mean temperature and determining criticality-process parameters of recess depth and CD is observed. Furthermore, detail zonal temperature/profile correlation is investigated to identify individual correlation in each chuck zone, and provided unique process knobs corresponding to each chunk. Meanwhile, passive ESC Chuck DOE was done to modulate wafer temperature at different zones, and Sensor Array wafer measurements verified temperature responding well with the ESC set point. Correlation R2 = 0.9979 for outer ring and R2 = 0.9981 for Mid Outer ring is observed, as shown in . Experiments planning to modulate edge zone ESC temperature to tune profile within-wafer uniformity and prove gain in edge yield enhancement and to improve edge yield is underway.

Localized etching of an insulator film coated on a copper wire using an atmospheric-pressure microplasma jet.

PubMed

Yoshiki, Hiroyuki

2007-04-01

Atmospheric-pressure microplasma jets (APmicroPJs) of Ar and ArO(2) gases were generated from the tip of a stainless steel surgical needle having outer and inner diameters of 0.4 and 0.2 mm, respectively, with a rf excitation of 13.56 MHz. The steel needle functions both as a powered electrode and a gas nozzle. The operating power is 1.2-6 W and the corresponding peak-to-peak voltage Vp.p. is about 1.5 kV. The APmicroPJ was applied to the localized etching of a polyamide-imide insulator film (thickness of 10 microm) of a copper winding wire of 90 microm diameter. The insulator film around the copper wire was completely removed by the irradiated plasma from a certain direction without fusing the wire. The removal time under the Ar APmicroPJ irradiation was only 3 s at a rf power of 4 W. Fluorescence microscopy and scanning electron microscope images reveal that good selectivity of the insulator film to the copper wire was achieved. In the case of ArO(2) APmicroPJ irradiation with an O(2) concentration of 10% or more, the removed copper surface was converted to copper monoxide CuO.

Method of processing a substrate

DOEpatents

Babayan, Steven E [Huntington Beach, CA; Hicks, Robert F [Los Angeles, CA

2008-02-12

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.

AlGaN Channel Transistors for Power Management and Distribution

NASA Technical Reports Server (NTRS)

VanHove, James M.

1996-01-01

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

Etude fondamentale des mecanismes de gravure par plasma de materiaux de pointe: Application a la fabrication de dispositifs photoniques

NASA Astrophysics Data System (ADS)

Stafford, Luc

Advances in electronics and photonics critically depend upon plasma-based materials processing either for transferring small lithographic patterns into underlying materials (plasma etching) or for the growth of high-quality films. This thesis deals with the etching mechanisms of materials using high-density plasmas. The general objective of this work is to provide an original framework for the plasma-material interaction involved in the etching of advanced materials by putting the emphasis on complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. Based on a synthesis of the descriptions proposed by different authors to explain the etching characteristics of simple materials in noble and halogenated plasma mixtures, we propose comprehensive rate models for physical and chemical plasma etching processes. These models have been successfully validated using experimental data published in literature for Si, Pt, W, SiO2 and ZnO. As an example, we have been able to adequately describe the simultaneous dependence of the etch rate on ion and reactive neutral fluxes and on the ion energy. From an exhaustive experimental investigation of the plasma and etching properties, we have also demonstrated that the validity of the proposed models can be extended to complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. We also reported for the first time physical aspects involved in plasma etching such as the influence of the film microstructural properties on the sputter-etch rate and the influence of the positive ion composition on the ion-assisted desorption dynamics. Finally, we have used our deep investigation of the etching mechanisms of STO films and the resulting excellent control of the etch rate to fabricate a ridge waveguide for photonic device applications. Keywords: plasma etching, sputtering, adsorption and desorption dynamics, high-density plasmas, plasma diagnostics, advanced materials, photonic applications.

Modelling Of Chlorine Inductive Discharges

NASA Astrophysics Data System (ADS)

Chabert P.; Despiau-Pujo, E.

2010-07-01

III-V compounds such as GaAs, InP or GaN-based materials are increasingly important for their use in optoelectronic applications, especially in the telecommunications and light detection industries. Photonic devices including lasers, photodetectors or LEDs, require reliable etching processes characterized by high etch rate, profile control and low damage. Although many problems remain to be understood, inductively coupled discharges seem to be promising to etch such materials, using Cl2/Ar, Cl2/N2 and Cl2/H2 gas chemistries. Inductively coupled plasma (ICP) sources meet most of the requirements for efficient plasma processing such as high etch rates, high ion densities and low controllable ion energies. However, the presence of a negative ion population in the plasma alters the positive ion flux, reduces the electron density, changes the electron temperature, modifies the spatial structure of the discharge and can cause unstable operation. Several experimental studies and numerical simulation results have been published on inductively coupled Cl2/Ar plasmas but relatively few systematic comparisons of model predictions and experimental data have been reported in given reactor geometries under a wide range of op- erating conditions. Validation of numerical predictions is essential for chemically complex plasma processing and there is a need to benchmark the models with as many measurements as possible. In this paper, comparisons of 2D fluid simulations with experimental measurements of Ar/Cl2 plasmas in a low pressure ICP reactor are reported (Corr et al. 2008). The electron density, negative ion fraction and Cl atom density are investigated for various conditions of Ar/Cl2 ratio, gas pressure and applied RF power in H mode. Simulations show that the wall recombination coefficient of Cl atom (?) is a key parameter of the model and that neutral densities are very sensitive to its variations. The best agreement between model and experiment is obtained for ? = 0.02, which is much lower than the value predicted for stainless steel walls (? = 0.6). This is consistent with reactor wall contaminations classi- cally observed in such discharges. The plasma electronegativity decreases with RF power and increases with Cl2 content. At high pressure, the power absorption and distribution of charged particles become more localized below the quartz window. Although the experi- mental trends are well reproduced by the model, the calculated charged particle densities are systematically overestimated by a factor of 3-5. The reasons for this discrepancy are discussed in the paper. Experimental studies have also shown that low-pressure inductive discharges operating with electronegative gases are subject to instabilities near the transition between capacitive (E) and inductive (H) modes. A global model, consisting of two particle balance equations and one energy balance equation, has been previously proposed to describe the instability mechanism in SF6/ArSF6 (Lieberman et al. 1999). This model, which agrees qualitatively well with experimental observations, leaves significant quantitative differences. In this work, this global model is revisited with Cl2 as the feedstock gas (Despiau-Pujo and Chabert 2009). An alternative treatment of the inductive power deposition is evaluated and chlorine chemistry is included. Old and new models are systematically compared. The alternative inductive coupling description slightly modifies the results. The effect of gas chemistry is even more pronounced. The instability window is smaller in pressure and larger in absorbed power, the frequency is higher and the amplitudes of oscillations are reduced. The feedstock gas is weakly dissociated (~16%) and Cl2+ is the dominant positive ion, which is consistent with the moderate electron density during the instability cycle.

GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

NASA Astrophysics Data System (ADS)

Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

2013-09-01

Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer

NASA Astrophysics Data System (ADS)

Brakensiek, Nickolas; Xu, Kui; Sweat, Daniel; Hockey, Mary Ann

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCPs) is one of the most promising patterning technologies for future lithography nodes. However, one of the biggest challenges to DSA is the pattern transfer by plasma etching from BCP to hardmask (HM) because the etch selectivity between BCP and neutral brush layer underneath is usually not high enough to enable robust pattern transfer. This paper will explore the plasma etch conditions of both BCPs and neutral brush layers that may improve selectivity and allow a more robust pattern transfer of DSA patterns into the hardmask layer. The plasma etching parameters that are under investigation include the selection of oxidative or reductive etch chemistries, as well as plasma gas pressure, power, and gas mixture fractions. Investigation into the relationship between BCP/neutral brush layer materials with varying chemical compositions and the plasma etching conditions will be highlighted. The culmination of this work will demonstrate important etch parameters that allow BCPs and neutral brush layers to be etched into the underlying hardmask layer with a large process window.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2013-10-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45 nm through 14/10 nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Advanced plasma etch technologies for nanopatterning

NASA Astrophysics Data System (ADS)

Wise, Rich

2012-03-01

Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques such as litho-etch-litho-etch, sidewall image transfer, line/cut mask and self-aligned structures have been implemented to solution required device scaling. Advances in dry plasma etch process control, across wafer uniformity and etch selectivity to both masking materials and have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes such as trilayer etches, aggressive CD shrink techniques, and the extension of resist trim processes have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across design variation, defectivity, profile stability within wafer, within lot, and across tools have been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated Total Patterning Solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. This paper will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

Modeling Cl2/O2/Ar inductively coupled plasmas used for silicon etching: effects of SiO2 chamber wall coating

NASA Astrophysics Data System (ADS)

Tinck, S.; Boullart, W.; Bogaerts, A.

2011-08-01

In this paper, simulations are performed to gain a better insight into the properties of a Cl2/Ar plasma, with and without O2, during plasma etching of Si. Both plasma and surface properties are calculated in a self-consistent manner. Special attention is paid to the behavior of etch products coming from the wafer or the walls, and how the chamber walls can affect the plasma and the resulting etch process. Two modeling cases are considered. In the first case, the reactor walls are defined as clean (Al2O3), whereas in the second case a SiO2 coating is introduced on the reactor walls before the etching process, so that oxygen will be sputtered from the walls and introduced into the plasma. For this reason, a detailed reaction set is presented for a Cl2/O2/Ar plasma containing etched species, as well as an extensive reaction set for surface processes, including physical and chemical sputtering, chemical etching and deposition processes. Density and flux profiles of various species are presented for a better understanding of the bulk plasma during the etching process. Detailed information is also given on the composition of the surfaces at various locations of the reactor, on the etch products in the plasma and on the surface loss probabilities of the plasma species at the walls, with different compositions. It is found that in the clean chamber, walls are mostly chlorinated (Al2Cl3), with a thin layer of etch products residing on the wall. In the coated chamber, an oxy-chloride layer is grown on the walls for a few nanometers during the etching process. The Cl atom wall loss probability is found to decrease significantly in the coated chamber, hence increasing the etch rate. SiCl2, SiCl4 and SiCl3 are found to be the main etch products in the plasma, with the fraction of SiCl2 being always slightly higher. The simulation results compare well with experimental data available from the literature.

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Oxygen ion-beam microlithography

DOEpatents

Tsuo, Y.S.

1991-08-20

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used. 5 figures.

Oxygen ion-beam microlithography

DOEpatents

Tsuo, Y. Simon

1991-01-01

A method of providing and developing a resist on a substrate for constructing integrated circuit (IC) chips includes the following steps: of depositing a thin film of amorphous silicon or hydrogenated amorphous silicon on the substrate and exposing portions of the amorphous silicon to low-energy oxygen ion beams to oxidize the amorphous silicon at those selected portions. The nonoxidized portions are then removed by etching with RF-excited hydrogen plasma. Components of the IC chip can then be constructed through the removed portions of the resist. The entire process can be performed in an in-line vacuum production system having several vacuum chambers. Nitrogen or carbon ion beams can also be used.

High rate dry etching of InGaZnO by BCl3/O2 plasma

NASA Astrophysics Data System (ADS)

Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

2011-08-01

This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

Alternating SiCl4/O2 passivation steps with SF6 etch steps for silicon deep etching

NASA Astrophysics Data System (ADS)

Duluard, C. Y.; Ranson, P.; Pichon, L. E.; Pereira, J.; Oubensaid, E. H.; Lefaucheux, P.; Puech, M.; Dussart, R.

2011-06-01

Deep etching of silicon has been investigated in an inductively coupled plasma etch reactor using short SiCl4/O2 plasma steps to passivate the sidewalls of the etched structures. A study was first carried out to define the appropriate parameters to create, at a substrate temperature of -20 °C, a passivation layer by SiCl4/O2 plasma that resists lateral chemical etching in SF6 plasma. The most efficient passivation layer was obtained for a SiCl4/O2 gas flow ratio of 2:1, a pressure of 1 Pa and a source power of 1000 W. Ex situ analyses on a film deposited with these parameters show that it is very rich in oxygen. Silicon etching processes that alternate SF6 plasma etch steps with SiCl4/O2 plasma passivation steps were then developed. Preliminary tests in pulsed-mode conditions have enabled etch rates greater than 2 µm min-1 with selectivities higher than 220. These results show that it is possible to develop a silicon deep etching process at substrate temperatures around -20 °C that uses low SiCl4 and O2 gas flows instead of conventional fluorocarbon gases for sidewall protection.

Ion-beam-assisted etching of diamond

NASA Technical Reports Server (NTRS)

Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

1985-01-01

The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Performance of a permanent-magnet helicon source at 27 and 13 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Francis F.

2012-09-15

A small helicon source is used to create dense plasma and inject it into a large chamber. A permanent magnet is used for the dc magnetic field (B-field), making the system very simple and compact. Though theory predicts that better antenna coupling will occur at 27.12 MHz, it was found that 13.56 MHz surprisingly gives even higher density due to practical effects not included in theory. Complete density n and electron temperature T{sub e} profiles are measured at three distances below the source. The plasma inside the source is also measured with a special probe, even under the antenna. Themore » density there is lower than expected because the plasma created is immediately ejected, filling the experimental chamber. The advantage of helicons over inductively coupled plasmas (with no B-field) increases with RF power. At high B-fields, edge ionization by the Trivelpiece-Gould mode can be seen. These results are useful for design of multiple-tube, large-area helicon sources for plasma etching and deposition because problems are encountered which cannot be foreseen by theory alone.« less

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Hyungjoo; Zhu Weiye; Liu Lei

2013-05-15

Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorine-containing plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N{sub 2} (C{sup 3}{Pi}{sub u}{yields}B{sup 3}{Pi}{sub g}) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl{sub 2}/He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O{sub 2} in the Cl{sub 2}/He plasma. Reverse selectivity (10:1 of TaNmore » etching over TiN) was observed when adding small amounts of O{sub 2} to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.« less

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Effect of oxygen plasma etching on pore size-controlled 3D polycaprolactone scaffolds for enhancing the early new bone formation in rabbit calvaria.

PubMed

Kook, Min-Suk; Roh, Hee-Sang; Kim, Byung-Hoon

2018-05-02

This study was to investigate the effects of O 2 plasma-etching of the 3D polycaprolactone (PCL) scaffold surface on preosteoblast cell proliferation and differentiation, and early new bone formation. The PCL scaffolds were fabricated by 3D printing technique. After O 2 plasma treatment, surface characterizations were examined by scanning electron microscopy, atomic force microscopy, and contact angle. MTT assay was used to determine cell proliferation. To investigate the early new bone formation, rabbits were sacrificed at 2 weeks for histological analyses. As the O 2 plasma etching time is increased, roughness and hydrophilicity of the PCL scaffold surface increased. The cell proliferation and differentiation on plasma-etched samples was significantly increased than on untreated samples. At 2 weeks, early new bone formation in O 2 plasma-etched PCL scaffolds was the higher than that of untreated scaffolds. The O 2 plasma-etched PCL scaffolds showed increased preosteoblast differentiation as well as increased new bone formation.

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Quantum cascade laser based monitoring of CF{sub 2} radical concentration as a diagnostic tool of dielectric etching plasma processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hübner, M.; Lang, N.; Röpcke, J.

2015-01-19

Dielectric etching plasma processes for modern interlevel dielectrics become more and more complex by the introduction of new ultra low-k dielectrics. One challenge is the minimization of sidewall damage, while etching ultra low-k porous SiCOH by fluorocarbon plasmas. The optimization of this process requires a deeper understanding of the concentration of the CF{sub 2} radical, which acts as precursor in the polymerization of the etch sample surfaces. In an industrial dielectric etching plasma reactor, the CF{sub 2} radical was measured in situ using a continuous wave quantum cascade laser (cw-QCL) around 1106.2 cm{sup −1}. We measured Doppler-resolved ro-vibrational absorption lines andmore » determined absolute densities using transitions in the ν{sub 3} fundamental band of CF{sub 2} with the aid of an improved simulation of the line strengths. We found that the CF{sub 2} radical concentration during the etching plasma process directly correlates to the layer structure of the etched wafer. Hence, this correlation can serve as a diagnostic tool of dielectric etching plasma processes. Applying QCL based absorption spectroscopy opens up the way for advanced process monitoring and etching controlling in semiconductor manufacturing.« less

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

NASA Astrophysics Data System (ADS)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

Plasma etching of polymers like SU8 and BCB

NASA Astrophysics Data System (ADS)

Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

2003-01-01

Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

Graphene nanoribbons: Relevance of etching process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simonet, P., E-mail: psimonet@phys.ethz.ch; Bischoff, D.; Moser, A.

2015-05-14

Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely, O{sub 2} plasma ashing and O{sub 2 }+ Ar reactive ion etching (RIE). O{sub 2} plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resulting in instabilities in the ribbon transport. These are probably caused bymore » more or larger localized states at the edges of the ashed device compared to the RIE defined device.« less

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma

NASA Astrophysics Data System (ADS)

Ham, Yong-Hyun; Efremov, Alexander; Min, Nam-Ki; Lee, Hyun Woo; Yun, Sun Jin; Kwon, Kwang-Ho

2009-08-01

A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4-10 mTorr) and input power (400-700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.

Mechanism for Plasma Etching of Shallow Trench Isolation Features in an Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; He, Jim; Choi, Jinhan; Collins, Ken

2011-10-01

Plasma etching for microelectronics fabrication is facing extreme challenges as processes are developed for advanced technological nodes. As device sizes shrink, control of shallow trench isolation (STI) features become more important in both logic and memory devices. Halogen-based inductively coupled plasmas in a pressure range of 20-60 mTorr are typically used to etch STI features. The need for improved performance and shorter development cycles are placing greater emphasis on understanding the underlying mechanisms to meet process specifications. In this work, a surface mechanism for STI etch process will be discussed that couples a fundamental plasma model to experimental etch process measurements. This model utilizes ion/neutral fluxes and energy distributions calculated using the Hybrid Plasma Equipment Model. Experiments are for blanket Si wafers in a Cl2/HBr/O2/N2 plasma over a range of pressures, bias powers, and flow rates of feedstock gases. We found that kinetic treatment of electron transport was critical to achieve good agreement with experiments. The calibrated plasma model is then coupled to a string-based feature scale model to quantify the effect of varying process parameters on the etch profile. We found that the operating parameters strongly influence critical dimensions but have only a subtle impact on the etch depths.

Ion source with external RF antenna

DOEpatents

Leung, Ka-Ngo; Ji, Qing; Wilde, Stephen

2005-12-13

A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Donnelly, Vincent M.; Kornblit, Avinoam

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussionmore » of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.« less

Formation and metrology of dual scale nano-morphology on SF(6) plasma etched silicon surfaces.

PubMed

Boulousis, G; Constantoudis, V; Kokkoris, G; Gogolides, E

2008-06-25

Surface roughness and nano-morphology in SF(6) plasma etched silicon substrates are investigated in a helicon type plasma reactor as a function of etching time and process parameters. The plasma etched surfaces are analyzed by atomic force microscopy. It is found that dual scale nano-roughness is formatted on the silicon surface comprising an underlying nano-roughness and superimposed nano-mounds. Detailed metrological quantification is proposed for the characterization of dual scale surface morphology. As etching proceeds, the mounds become higher, fewer and wider, and the underlying nano-roughness also increases. Increase in wafer temperature leads to smoother surfaces with lower, fewer and wider nano-mounds. A mechanism based on the deposition of etch inhibiting particles during the etching process is proposed for the explanation of the experimental behavior. In addition, appropriately designed experiments are conducted, and they confirm the presence of this mechanism.

Effect of the addition of SF6 and N2 in inductively coupled SiCl4 plasma for GaN etching

NASA Astrophysics Data System (ADS)

Oubensaid, E. H.; Duluard, C. Y.; Pichon, L. E.; Pereira, J.; Boufnichel, M.; Lefaucheux, P.; Dussart, R.; Ranson, P.

2009-07-01

The GaN etching by SiCl4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl4 plasma, with an etch rate of 19 nm min-1. This result is comparable to other reported results. Thereafter, the combination of SiCl4 with SF6 and N2 was tested in order to increase the etch rate. The addition of SF6 in the plasma has enabled us to reach an etch rate of 53 nm min-1. However, best results were obtained with the addition of N2, with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

A Study on the Transient Behavior of Pulse Modulated Dual-Frequency Capacitive Discharges based on Circuit Analysis

NASA Astrophysics Data System (ADS)

Na, Byungkeun; Bae, Inshik; Park, Gi Jung; Chang, Hong-Young

2016-09-01

Multi-frequency capacitively coupled plasma (CCP) has been studied to independently control the ion energy and the ion flux; pulsing technique is used to reduce the electron temperature and finally the charging effects. The use of these techniques is a key to high aspect ratio contact (HARC) etching in the recent semiconductor processing. In this study, the characteristics of pulsed dual frequency (DF) CCP is investigated. Two separate powers of 3 MHz and 40 MHz are delivered to the powered electrode of an asymmetric CCP, and each frequency is modulated by an external 1 kHz pulse. Due to the complexity of the RF compensation in DF CCP, the characteristics of the plasma and the sheath are analyzed by high speed impedance measurement. The transient behavior of pulse modulated DF CCP is analyzed based on the result of continuous wave (CW) DF CCP. The optimized experimental condition for high ion energy will be presented. The difference between electronegative oxygen plasma and electropositive argon plasma is discussed as well.

Surface Morphology of Undoped and Doped ZnSe Films

NASA Technical Reports Server (NTRS)

George, T.; Hayes, M.; Chen, H.; Chattopadhyay, K.; Thomas E.; Morgan, S.; Burger, A.

1998-01-01

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gul, Banat, E-mail: banatgul@gmail.com; Research Group PLASMANT, Department of Chemistry, University of Antwerp, Universiteitsplein 1, B-2610 Antwerp; Aman-ur-Rehman, E-mail: amansadiq@gmail.com

Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBrmore » by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.« less

Ion energy distributions in a pulsed dual frequency inductively coupled discharge of Ar/CF{sub 4} and effect of duty ratio

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mishra, Anurag; Seo, Jin Seok; Kim, Tae Hyung

2015-08-15

Controlling time averaged ion energy distribution (IED) is becoming increasingly important in many plasma material processing applications for plasma etching and deposition. The present study reports the evolution of ion energy distributions with radio frequency (RF) powers in a pulsed dual frequency inductively discharge and also investigates the effect of duty ratio. The discharge has been sustained using two radio frequency, low (P{sub 2 MHz} = 2 MHz) and high (P{sub 13.56 MHz} = 13.56 MHz) at a pressure of 10 mTorr in argon (90%) and CF{sub 4} (10%) environment. The low frequency RF powers have been varied from 100 to 600 W, whereas the high frequency powers frommore » 200 to 1200 W. Typically, IEDs show bimodal structure and energy width (energy separation between the high and low energy peaks) increases with increasing P{sub 13.56 MHz}; however, it shows opposite trends with P{sub 2 MHz}. It has been observed that IEDs bimodal structure tends to mono-modal structure and energy peaks shift towards low energy side as duty ratio increases, keeping pulse power owing to mode transition (capacitive to inductive) constant.« less

Low-loss, submicron chalcogenide integrated photonics with chlorine plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiles, Jeff; Malinowski, Marcin; Rao, Ashutosh

A chlorine plasma etching-based method for the fabrication of high-performance chalcogenide-based integrated photonics on silicon substrates is presented. By optimizing the etching conditions, chlorine plasma is employed to produce extremely low-roughness etched sidewalls on waveguides with minimal penalty to propagation loss. Using this fabrication method, microring resonators with record-high intrinsic Q-factors as high as 450 000 and a corresponding propagation loss as low as 0.42 dB/cm are demonstrated in submicron chalcogenide waveguides. Furthermore, the developed chlorine plasma etching process is utilized to demonstrate fiber-to-waveguide grating couplers in chalcogenide photonics with high power coupling efficiency of 37% for transverse-electric polarized modes.

Synthesis of ultrafine Si3N4 powder in RF-RF plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Michitaka; Nishio, Hiroaki

1991-10-01

A newly designed plasma-CVD apparatus mounted with the RF-RF type plasma torch was introduced to synthesize ultrafine powders of silicon nitride (Si3N4). The RF-RF plasma system (the combination of a main (lower) and controlling (upper) RF plasma) improved the stability of simple RF plasma and solved the impurity problem of dc-RF hybrid plasma. The reaction of SiCl4 and NH3, which were radially injected into the tail flames of the upper and lower plasmas, respectively, yielded near-stoichiometric amorphous powders of Si3N4. The nitrogen content in the products largely depended on the flow rate of the quenching gas, a mixture of NH3more » (reactant) and H2. The oxygen content and metal impurities are 2-3 wt pct and less than 200 ppm, respectively. The powder particles had an average diameter of about 15 nm with a narrow size distribution, and showed extreme air sensitivity. Conspicuous crystallazation and particle growth occurred when heated at temperatures above 1400 C. These results suggested that the RF-RF system was a potential reactor for the synthesis of ultrafine powders with excellent sinterability at relatively low temperatures. 9 refs.« less

Conceptual Design of Electron-Beam Generated Plasma Tools

NASA Astrophysics Data System (ADS)

Agarwal, Ankur; Rauf, Shahid; Dorf, Leonid; Collins, Ken; Boris, David; Walton, Scott

2015-09-01

Realization of the next generation of high-density nanostructured devices is predicated on etching features with atomic layer resolution, no damage and high selectivity. High energy electron beams generate plasmas with unique features that make them attractive for applications requiring monolayer precision. In these plasmas, high energy beam electrons ionize the background gas and the resultant daughter electrons cool to low temperatures via collisions with gas molecules and lack of any accelerating fields. For example, an electron temperature of <0.6 eV with densities comparable to conventional plasma sources can be obtained in molecular gases. The chemistry in such plasmas can significantly differ from RF plasmas as the ions/radicals are produced primarily by beam electrons rather than those in the tail of a low energy distribution. In this work, we will discuss the conceptual design of an electron beam based plasma processing system. Plasma properties will be discussed for Ar, Ar/N2, and O2 plasmas using a computational plasma model, and comparisons made to experiments. The fluid plasma model is coupled to a Monte Carlo kinetic model for beam electrons which considers gas phase collisions and the effect of electric and magnetic fields on electron motion. The impact of critical operating parameters such as magnetic field, beam energy, and gas pressure on plasma characteristics in electron-beam plasma processing systems will be discussed. Partially supported by the NRL base program.

Negative ion source with external RF antenna

DOEpatents

Leung, Ka-Ngo; Hahto, Sami K.; Hahto, Sari T.

2007-02-13

A radio frequency (RF) driven plasma ion source has an external RF antenna, i.e. the RF antenna is positioned outside the plasma generating chamber rather than inside. The RF antenna is typically formed of a small diameter metal tube coated with an insulator. An external RF antenna assembly is used to mount the external RF antenna to the ion source. The RF antenna tubing is wound around the external RF antenna assembly to form a coil. The external RF antenna assembly is formed of a material, e.g. quartz, which is essentially transparent to the RF waves. The external RF antenna assembly is attached to and forms a part of the plasma source chamber so that the RF waves emitted by the RF antenna enter into the inside of the plasma chamber and ionize a gas contained therein. The plasma ion source is typically a multi-cusp ion source. A converter can be included in the ion source to produce negative ions.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Plasma-Etching of Spray-Coated Single-Walled Carbon Nanotube Films for Biointerfaces

NASA Astrophysics Data System (ADS)

Kim, Joon Hyub; Lee, Jun-Yong; Min, Nam Ki

2012-08-01

We present an effective method for the batch fabrication of miniaturized single-walled carbon nanotube (SWCNT) film electrodes using oxygen plasma etching. We adopted the approach of spray-coating for good adhesion of the SWCNT film onto a pre-patterned Pt support and used O2 plasma patterning of the coated films to realize efficient biointerfaces between SWCNT surfaces and biomolecules. By these approaches, the SWCNT film can be easily integrated into miniaturized electrode systems. To demonstrate the effectiveness of plasma-etched SWCNT film electrodes as biointerfaces, Legionella antibody was selected as analysis model owing to its considerable importance to electrochemical biosensors and was detected using plasma-etched SWCNT film electrodes and a 3,3',5,5'-tetramethyl-benzidine dihydrochloride/horseradish peroxidase (TMB/HRP) catalytic system. The response currents increased with increasing concentration of Legionella antibody. This result indicates that antibodies were effectively immobilized on plasma-etched and activated SWCNT surfaces.

Plasma/Neutral-Beam Etching Apparatus

NASA Technical Reports Server (NTRS)

Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

1989-01-01

Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

New frontiers of atomic layer etching

NASA Astrophysics Data System (ADS)

Sherpa, Sonam D.; Ranjan, Alok

2018-03-01

Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or quasicontinuous plasma etching. These benefits include (1) independent control of ion energy, ion flux, and radical flux, (2) flux-independent etch rate that mitigates the iso-dense loading effects, and (3) ability to control the etch rate with atomic or nanoscale precision. In addition to these benefits, we demonstrate an area-selective etching for maskless lithography as a new frontier of ALE. In this paper, area-selective etching refers to the confinement of etching into the specific areas of the substrate. The concept of area-selective etching originated during our studies on quasi-ALE of silicon nitride which consists of sequential exposure of silicon nitride to hydrogen and fluorinated plasma. The findings of our studies reported in this paper suggest that it may be possible to confine the etching into specific areas of silicon nitride without using any mask by replacing conventional hydrogen plasma with a localized source of hydrogen ions.

Advancement of In-Flight Alumina Powder Spheroidization Process with Water Droplet Injection Using a Small Power DC-RF Hybrid Plasma Flow System

NASA Astrophysics Data System (ADS)

Jang, Juyong; Takana, Hidemasa; Park, Sangkyu; Nishiyama, Hideya

2012-09-01

The correlation between plasma thermofluid characteristics and alumina powder spheroidization processes with water droplet injection using a small power DC-RF hybrid plasma flow system was experimentally clarified. Micro-sized water droplets with a low water flow rate were injected into the tail of thermal plasma flow so as not to disturb the plasma flow directly. Injected water droplets were vaporized in the thermal plasma flow and were transported upstream in the plasma flow to the torch by the backflow. After dissociation of water, the production of hydrogen was detected by the optical emission spectroscopy in the downstream RF plasma flow. The emission area of the DC plasma jet expanded and elongated in the vicinity of the RF coils. Additionally, the emission area of RF plasma flow enlarged and was visible as red emission in the downstream RF plasma flow in the vicinity below the RF coils due to hydrogen production. Therefore, the plasma flow mixed with produced hydrogen increased the plasma enthalpy and the highest spheroidization rate of 97% was obtained at a water flow rate of 15 Sm l/min and an atomizing gas flow rate of 8 S l/min using a small power DC-RF hybrid plasma flow system.

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

NASA Astrophysics Data System (ADS)

Ono, Kouichi; Nakazaki, Nobuya; Tsuda, Hirotaka; Takao, Yoshinori; Eriguchi, Koji

2017-10-01

Atomic- or nanometer-scale roughness on feature surfaces has become an important issue to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases, smoothing of initially rough surfaces is required for planarization of film surfaces, and controlled surface roughening is required for maskless fabrication of organized nanostructures on surfaces. An understanding, under what conditions plasma etching results in surface roughening and/or smoothing and what are the mechanisms concerned, is of great technological as well as fundamental interest. In this article, we review recent developments in the experimental and numerical study of the formation and evolution of surface roughness (or surface morphology evolution such as roughening, smoothing, and ripple formation) during plasma etching of Si, with emphasis being placed on a deeper understanding of the mechanisms or plasma-surface interactions that are responsible for. Starting with an overview of the experimental and theoretical/numerical aspects concerned, selected relevant mechanisms are illustrated and discussed primarily on the basis of systematic/mechanistic studies of Si etching in Cl-based plasmas, including noise (or stochastic roughening), geometrical shadowing, surface reemission of etchants, micromasking by etch inhibitors, and ion scattering/chanelling. A comparison of experiments (etching and plasma diagnostics) and numerical simulations (Monte Carlo and classical molecular dynamics) indicates a crucial role of the ion scattering or reflection from microscopically roughened feature surfaces on incidence in the evolution of surface roughness (and ripples) during plasma etching; in effect, the smoothing/non-roughening condition is characterized by reduced effects of the ion reflection, and the roughening-smoothing transition results from reduced ion reflections caused by a change in the predominant ion flux due to that in plasma conditions. Smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces during etching (normal ion incidence) and formation of surface ripples by plasma etching (off-normal ion incidence) are also presented and discussed in this context.

Plasma Radiofrequency Discharges as Cleaning Technique for the Removal of C-W Coatings

NASA Astrophysics Data System (ADS)

Cremona, A.; Vassallo, E.; Caniello, R.; Ghezzi, F.; Grosso, G.; Laguardia, L.

2013-06-01

Erosion of materials by chemical and physical sputtering is one of the most concern of plasma wall interaction in tokamaks. In divertor ITER-like tokamaks, where carbon and tungsten are planned to be used, hydrogenated C-W mixed compounds are expected to form by erosion, transport and re-deposition processes. The selection of these materials as divertor components involves lifetime and safety issues due to tritium retention in carbon co-deposits. In this paper a cleaning technique based on RF (13.56 MHz) capacitively coupled H2/Ar plasmas has been used to remove C-W mixed materials from test specimens. The dependence of the removal rate on the H2/Ar ratio and on the plasma pressure has been investigated by X-ray photoelectron spectroscopy, atomic force microscopy, profilometry as regards the solid phase and by Langmuir probe and optical emission spectroscopy as regards the plasma phase. The best result has been obtained with a H2/Ar ratio of 10/90 at a pressure of 1 Pa. An explanation based on a synergistic effect between physical sputtering due to energetic ions and chemical etching due to radicals, together with the pressure dependence of the ion energy distribution function, is given.

Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

PubMed

Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

2017-09-13

Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

Oxygen Plasma Effect on QCM Sensor Coated Polystyrene Film

NASA Astrophysics Data System (ADS)

Khusnah, N. F.; Sakti, S. P.; Santjojo, D. J. D. H.

2018-05-01

Hydrophobicity property of polystyrene (PS) thin film is one of the essential factors to be considered in the development of quartz crystal microbalance (QCM) biosensor using polystyrene as matrix layer. Many methods were developed to improve the immobilization rate of the biomolecule on the sensor surface without affecting the QCM essential works. Surface modification of the sensor surface aims to modify the physical and or chemical property of the surface. A straightforward method, the fast, environmentally-friendly, and low-cost solution to modify the sensor surface coated with polystyrene film is using oxygen plasma. In this experiment, the polystyrene film was spin-coated on both surface of QCM electrodes and then heated at 100 °C. The specimen is then placed for 5 min long in a chamber filled with oxygen plasma generated by 2 MHz RF-DC high-density plasma system. The relationship between DC-bias used and the changes in morphology properties of the coated film was characterized by Topography Measurement System (TMS) and Contact Angle Measurement. The electrical characteristic of QCM was also characterized using Impedance Analyzer. It was revealed that the contact angle of oxygen plasma treated film is changed and depicted the hydrophobic character. Also, there is an increasing resonance frequency of the sensor after oxygen plasma treatment indicates an etching mechanism occurs during plasma treatment.

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

High density plasma etching of magnetic devices

NASA Astrophysics Data System (ADS)

Jung, Kee Bum

Magnetic materials such as NiFe (permalloy) or NiFeCo are widely used in the data storage industry. Techniques for submicron patterning are required to develop next generation magnetic devices. The relative chemical inertness of most magnetic materials means they are hard to etch using conventional RIE (Reactive Ion Etching). Therefore ion milling has generally been used across the industry, but this has limitations for magnetic structures with submicron dimensions. In this dissertation, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma) for the etching of magnetic materials (NiFe, NiFeCo, CoFeB, CoSm, CoZr) and other related materials (TaN, CrSi, FeMn), which are employed for magnetic devices like magnetoresistive random access memories (MRAM), magnetic read/write heads, magnetic sensors and microactuators. This research examined the fundamental etch mechanisms occurring in high density plasma processing of magnetic materials by measuring etch rate, surface morphology and surface stoichiometry. However, one concern with using Cl2-based plasma chemistry is the effect of residual chlorine or chlorinated etch residues remaining on the sidewalls of etched features, leading to a degradation of the magnetic properties. To avoid this problem, we employed two different processing methods. The first one is applying several different cleaning procedures, including de-ionized water rinsing or in-situ exposure to H2, O2 or SF6 plasmas. Very stable magnetic properties were achieved over a period of ˜6 months except O2 plasma treated structures, with no evidence of corrosion, provided chlorinated etch residues were removed by post-etch cleaning. The second method is using non-corrosive gas chemistries such as CO/NH3 or CO2/NH3. There is a small chemical contribution to the etch mechanism (i.e. formation of metal carbonyls) as determined by a comparison with Ar and N2 physical sputtering. The discharge should be NH3-rich to achieve the highest etch rates. Several different mask materials were investigated, including photoresist, thermal oxide and deposited oxide. Photoresist etches very rapidly in CO/NH 3 and use of a hard mask is necessary to achieve pattern transfer. Due to its physically dominated nature, the CO/NH3 chemistry appears suited to shallow etch depth (≤0.5mum) applications, but mask erosion leads to sloped feature sidewalls for deeper features.

Simulation of SiO2 etching in an inductively coupled CF4 plasma

NASA Astrophysics Data System (ADS)

Xu, Qing; Li, Yu-Xing; Li, Xiao-Ning; Wang, Jia-Bin; Yang, Fan; Yang, Yi; Ren, Tian-Ling

2017-02-01

Plasma etching technology is an indispensable processing method in the manufacturing process of semiconductor devices. Because of the high fluorine/carbon ratio of CF4, the CF4 gas is often used for etching SiO2. A commercial software ESI-CFD is used to simulate the process of plasma etching with an inductively coupled plasma model. For the simulation part, CFD-ACE is used to simulate the chamber, and CFD-TOPO is used to simulate the surface of the sample. The effects of chamber pressure, bias voltage and ICP power on the reactant particles were investigated, and the etching profiles of SiO2 were obtained. Simulation can be used to predict the effects of reaction conditions on the density, energy and angular distributions of reactant particles, which can play a good role in guiding the etching process.

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, B. S.; Rajasthan Technical University, Rawatbhata Road, Kota 324010; Singh, A.

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surfacemore » with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.« less

More vertical etch profile using a Faraday cage in plasma etching

NASA Astrophysics Data System (ADS)

Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

1999-05-01

Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap

NASA Astrophysics Data System (ADS)

Takei, Norihisa; Shinoda, Fumiya; Kakiuchi, Hiroaki; Yasutake, Kiyoshi; Ohmi, Hiromasa

2018-06-01

We have been developing an on-site silane (SiH4) generator based on use of the chemical etching reaction between solid silicon (Si) and the high-density H atoms that are generated in high-pressure H2 plasma. In this study, we have developed a slit-type plasma source for high-efficiency SiH4 generation. High-density H2 plasma was generated in a narrow slit-type discharge gap using a 2.45 GHz microwave power supply. The plasma’s optical emission intensity distribution along the slit was measured and the resulting distribution was reflected by both the electric power distribution and the hydrogen gas flow. Because the Si etching rate strongly affects the SiH4 generation rate, the Si etching behavior was investigated with respect to variations in the experimental parameters. The weight etch rate increased monotonically with increasing input microwave power. However, the weight etch rate decreased with increasing H2 pressure and an increasing plasma gap. This reduction in the etch rate appears to be related to shrinkage of the plasma generation area because increased input power is required to maintain a constant plasma area with increasing H2 pressure and the increasing plasma gap. Additionally, the weight etch rate also increases with increasing H2 flow rate. The SiH4 generation rate of the slit-type plasma source was also evaluated using gas-phase Fourier transform infrared absorption spectroscopy and the material utilization efficiencies of both Si and the H2 gas for SiH4 gas formation were discussed. The main etch product was determined to be SiH4 and the developed plasma source achieved a SiH4 generation rate of 10 sccm (standard cubic centimeters per minute) at an input power of 900 W. In addition, the Si utilization efficiency exceeded 60%.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ionmore » scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.« less

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.

1999-01-01

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas.

Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

DOEpatents

Ruby, D.S.; Schubert, W.K.; Gee, J.M.

1999-02-16

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.

Rapid recipe formulation for plasma etching of new materials

NASA Astrophysics Data System (ADS)

Chopra, Meghali; Zhang, Zizhuo; Ekerdt, John; Bonnecaze, Roger T.

2016-03-01

A fast and inexpensive scheme for etch rate prediction using flexible continuum models and Bayesian statistics is demonstrated. Bulk etch rates of MgO are predicted using a steady-state model with volume-averaged plasma parameters and classical Langmuir surface kinetics. Plasma particle and surface kinetics are modeled within a global plasma framework using single component Metropolis Hastings methods and limited data. The accuracy of these predictions is evaluated with synthetic and experimental etch rate data for magnesium oxide in an ICP-RIE system. This approach is compared and superior to factorial models generated from JMP, a software package frequently employed for recipe creation and optimization.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

PubMed Central

Kawakami, Masatoshi; Metzler, Dominik; Li, Chen; Oehrlein, Gottlieb S.

2016-01-01

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO2 using a steady-state Ar plasma, periodic injection of a defined number of C4F8 molecules, and synchronized plasma-based Ar+ ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change in the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C4F8 injection. The C4F8 and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number. PMID:27375342

Simulations of Control Schemes for Inductively Coupled Plasma Sources

NASA Astrophysics Data System (ADS)

Ventzek, P. L. G.; Oda, A.; Shon, J. W.; Vitello, P.

1997-10-01

Process control issues are becoming increasingly important in plasma etching. Numerical experiments are an excellent test-bench for evaluating a proposed control system. Models are generally reliable enough to provide information about controller robustness, fitness of diagnostics. We will present results from a two dimensional plasma transport code with a multi-species plasma chemstry obtained from a global model. [1-2] We will show a correlation of external etch parameters (e.g. input power) with internal plasma parameters (e.g. species fluxes) which in turn are correlated with etch results (etch rate, uniformity, and selectivity) either by comparison to experiment or by using a phenomenological etch model. After process characterization, a control scheme can be evaluated since the relationship between the variable to be controlled (e.g. uniformity) is related to the measurable variable (e.g. a density) and external parameter (e.g. coil current). We will present an evaluation using the HBr-Cl2 system as an example. [1] E. Meeks and J. W. Shon, IEEE Trans. on Plasma Sci., 23, 539, 1995. [2] P. Vitello, et al., IEEE Trans. on Plasma Sci., 24, 123, 1996.

Extreme wettability of nanostructured glass fabricated by non-lithographic, anisotropic etching

PubMed Central

Yu, Eusun; Kim, Seul-Cham; Lee, Heon Ju; Oh, Kyu Hwan; Moon, Myoung-Woon

2015-01-01

Functional glass surfaces with the properties of superhydrophobicity/or superhydrohydrophilicity, anti-condensation or low reflectance require nano- or micro-scale roughness, which is difficult to fabricate directly on glass surfaces. Here, we report a novel non-lithographic method for the fabrication of nanostructures on glass; this method introduces a sacrificial SiO2 layer for anisotropic plasma etching. The first step was to form nanopillars on SiO2 layer-coated glass by using preferential CF4 plasma etching. With continuous plasma etching, the SiO2 pillars become etch-resistant masks on the glass; thus, the glass regions covered by the SiO2 pillars are etched slowly, and the regions with no SiO2 pillars are etched rapidly, resulting in nanopatterned glass. The glass surface that is etched with CF4 plasma becomes superhydrophilic because of its high surface energy, as well as its nano-scale roughness and high aspect ratio. Upon applying a subsequent hydrophobic coating to the nanostructured glass, a superhydrophobic surface was achieved. The light transmission of the glass was relatively unaffected by the nanostructures, whereas the reflectance was significantly reduced by the increase in nanopattern roughness on the glass. PMID:25791414

Plasma Processing with a One Atmosphere Uniform Glow Discharge Plasma (OAUGDP)

NASA Astrophysics Data System (ADS)

Reece Roth, J.

2000-10-01

The vast majority of all industrial plasma processing is conducted with glow discharges at pressures below 10 torr. This has limited applications to high value workpieces as a result of the large capital cost of vacuum systems and the production constraints of batch processing. It has long been recognized that glow discharges would play a much larger industrial role if they could be operated at one atmosphere. The One Atmosphere Uniform Glow Discharge Plasma (OAUGDP) has been developed at the University of Tennessee Plasma Sciences Laboratory. The OAUGDP is non-thermal RF plasma with the time-resolved characteristics of a classical low pressure DC normal glow discharge. An interdisciplinary team was formed to conduct exploratory investigations of the physics and applications of the OAUGDP. This team includes collaborators from the UTK Textiles and Nonwovens Development Center (TANDEC) and the Departments of Electrical and Computer Engineering, Microbiology, Food Science and Technology, and Mechanical and Aerospace Engineering and Engineering Science. Exploratory tests were conducted on a variety of potential plasma processing and other applications. These include the use of OAUGDP to sterilize medical and dental equipment and air filters; diesel soot removal; plasma aerodynamic effects; electrohydrodynamic (EDH) flow control of the neutral working gas; increasing the surface energy of materials; increasing the wettability and wickability of fabrics; and plasma deposition and directional etching. A general overview of these topics will be presented.

O2 Plasma Etching and Antistatic Gun Surface Modifications for CNT Yarn Microelectrode Improve Sensitivity and Antifouling Properties.

PubMed

Yang, Cheng; Wang, Ying; Jacobs, Christopher B; Ivanov, Ilia N; Venton, B Jill

2017-05-16

Carbon nanotube (CNT) based microelectrodes exhibit rapid and selective detection of neurotransmitters. While different fabrication strategies and geometries of CNT microelectrodes have been characterized, relatively little research has investigated ways to selectively enhance their electrochemical properties. In this work, we introduce two simple, reproducible, low-cost, and efficient surface modification methods for carbon nanotube yarn microelectrodes (CNTYMEs): O 2 plasma etching and antistatic gun treatment. O 2 plasma etching was performed by a microwave plasma system with oxygen gas flow and the optimized time for treatment was 1 min. The antistatic gun treatment flows ions by the electrode surface; two triggers of the antistatic gun was the optimized number on the CNTYME surface. Current for dopamine at CNTYMEs increased 3-fold after O 2 plasma etching and 4-fold after antistatic gun treatment. When the two treatments were combined, the current increased 12-fold, showing the two effects are due to independent mechanisms that tune the surface properties. O 2 plasma etching increased the sensitivity due to increased surface oxygen content but did not affect surface roughness while the antistatic gun treatment increased surface roughness but not oxygen content. The effect of tissue fouling on CNT yarns was studied for the first time, and the relatively hydrophilic surface after O 2 plasma etching provided better resistance to fouling than unmodified or antistatic gun treated CNTYMEs. Overall, O 2 plasma etching and antistatic gun treatment improve the sensitivity of CNTYMEs by different mechanisms, providing the possibility to tune the CNTYME surface and enhance sensitivity.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1982-01-01

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

The endpoint detection technique for deep submicrometer plasma etching

NASA Astrophysics Data System (ADS)

Wang, Wei; Du, Zhi-yun; Zeng, Yong; Lan, Zhong-went

2009-07-01

The availability of reliable optical sensor technology provides opportunities to better characterize and control plasma etching processes in real time, they could play a important role in endpoint detection, fault diagnostics and processes feedback control and so on. The optical emission spectroscopy (OES) method becomes deficient in the case of deep submicrometer gate etching. In the newly developed high density inductively coupled plasma (HD-ICP) etching system, Interferometry endpoint (IEP) is introduced to get the EPD. The IEP fringe count algorithm is investigated to predict the end point, and then its signal is used to control etching rate and to call end point with OES signal in over etching (OE) processes step. The experiment results show that IEP together with OES provide extra process control margin for advanced device with thinner gate oxide.

Characterization and reduction of gradient-induced eddy currents in the RF shield of a TEM resonator.

PubMed

Alecci, Marcello; Jezzard, Peter

2002-08-01

Radiofrequency (RF) shields that surround MRI transmit/receive coils should provide effective RF screening, without introducing unwanted eddy currents induced by gradient switching. Results are presented from a detailed examination of an effective RF shield design for a prototype transverse electromagnetic (TEM) resonator suitable for use at 3 Tesla. It was found that effective RF shielding and low eddy current sensitivity could be achieved by axial segmentation (gap width = 2.4 mm) of a relatively thick (35 microm) copper shield, etched on a kapton polyimide substrate. This design has two main advantages: first, it makes the TEM less sensitive to the external environment and RF interference; and second, it makes the RF shield mechanically robust and easy to handle and assemble. Copyright 2002 Wiley-Liss, Inc.

Bi-stage time evolution of nano-morphology on inductively coupled plasma etched fused silica surface caused by surface morphological transformation

NASA Astrophysics Data System (ADS)

Jiang, Xiaolong; Zhang, Lijuan; Bai, Yang; Liu, Ying; Liu, Zhengkun; Qiu, Keqiang; Liao, Wei; Zhang, Chuanchao; Yang, Ke; Chen, Jing; Jiang, Yilan; Yuan, Xiaodong

2017-07-01

In this work, we experimentally investigate the surface nano-roughness during the inductively coupled plasma etching of fused silica, and discover a novel bi-stage time evolution of surface nano-morphology. At the beginning, the rms roughness, correlation length and nano-mound dimensions increase linearly and rapidly with etching time. At the second stage, the roughening process slows down dramatically. The switch of evolution stage synchronizes with the morphological change from dual-scale roughness comprising long wavelength underlying surface and superimposed nano-mounds to one scale of nano-mounds. A theoretical model based on surface morphological change is proposed. The key idea is that at the beginning, etched surface is dual-scale, and both larger deposition rate of etch inhibitors and better plasma etching resistance at the surface peaks than surface valleys contribute to the roughness development. After surface morphology transforming into one-scale, the difference of plasma resistance between surface peaks and valleys vanishes, thus the roughening process slows down.

Reactive ion etching of indium-tin oxide films by CCl4-based Inductivity Coupled Plasma

NASA Astrophysics Data System (ADS)

Juneja, Sucheta; Poletayev, Sergey D.; Fomchenkov, Sergey; Khonina, Svetlana N.; Skidanov, Roman V.; Kazanskiy, Nikolay L.

2016-08-01

Indium tin oxide (ITO) films have been a subject of extensive studies in fabrication of micro-electronic devices for opto-electronic applications ranging from anti-reflection coatings to transparent contacts in photovoltaic devices. In this paper, a new and effective way of reactive ion etching of a conducting indium-tin oxide (ITO) film with Carbon tetrachloride (CCl4) has been investigated. CCl4 plasma containing an addition of gases mixture of dissociated argon and oxygen were used. Oxygen is added to increase the etchant percentage whereas argon was used for stabilization of plasma. The etching characteristics obtained with these gaseous mixtures were explained based on plasma etch chemistry and etching regime of ITO films. An etch rate as high as ∼20 nm/min can be achieved with a controlled process parameter such as power density, total flow rate, composition of reactive gases gas and pressure. Our Investigation represents some of the extensive work in this area.

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

NASA Technical Reports Server (NTRS)

Jung, C.; Thomas, B.; Lee, C.; Peralta, A.; Chattopadhyay, G.; Gill, J.; Cooper, K.; Mehdi, I.

2011-01-01

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Numerical simulation of electromagnetic fields and impedance of CERN LINAC4 H(-) source taking into account the effect of the plasma.

PubMed

Grudiev, A; Lettry, J; Mattei, S; Paoluzzi, M; Scrivens, R

2014-02-01

Numerical simulation of the CERN LINAC4 H(-) source 2 MHz RF system has been performed taking into account a realistic geometry from 3D Computer Aided Design model using commercial FEM high frequency simulation code. The effect of the plasma has been added to the model by the approximation of a homogenous electrically conducting medium. Electric and magnetic fields, RF power losses, and impedance of the circuit have been calculated for different values of the plasma conductivity. Three different regimes have been found depending on the plasma conductivity: (1) Zero or low plasma conductivity results in RF electric field induced by the RF antenna being mainly capacitive and has axial direction; (2) Intermediate conductivity results in the expulsion of capacitive electric field from plasma and the RF power coupling, which is increasing linearly with the plasma conductivity, is mainly dominated by the inductive azimuthal electric field; (3) High conductivity results in the shielding of both the electric and magnetic fields from plasma due to the skin effect, which reduces RF power coupling to plasma. From these simulations and measurements of the RF power coupling on the CERN source, a value of the plasma conductivity has been derived. It agrees well with an analytical estimate calculated from the measured plasma parameters. In addition, the simulated and measured impedances with and without plasma show very good agreement as well demonstrating validity of the plasma model used in the RF simulations.

Studies and testing of antireflective (AR) coatings for soda-lime glass

NASA Technical Reports Server (NTRS)

Pastirik, E. M.; Sparks, T. G.; Coleman, M. G.

1978-01-01

Processes for producing antireflection films on glass are concentrated in three areas: acid etching of glass, plasma etching of glass, and acid development of sodium silicate films on glass. The best transmission was achieved through the acid etching technique, while the most durable films were produced from development of sodium silicate films. Control of the acid etching technique is presently inadequate for production implementation. While films having excellent antireflective properties were fabricated by plasma etching techniques, all were water soluble.

Selective dry etching of silicon containing anti-reflective coating

NASA Astrophysics Data System (ADS)

Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

2018-03-01

Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic and Si layers) post pattern transfer, in a multi-layer structure will be discussed.

Development and evaluation of magnesium oxide-based ceramics for chamber parts in mass-production plasma etching equipment

NASA Astrophysics Data System (ADS)

Kasashima, Yuji; Tsutsumi, Kota; Mitomi, Shinzo; Uesugi, Fumihiko

2017-06-01

In mass-production plasma etching equipment, the corrosion of ceramic chamber parts reduces the production yield of LSI and overall equipment effectiveness (OEE) owing to contamination, short useful life, and particle generation. Novel ceramics that can improve the production yield and OEE are highly required. We develop magnesium oxide (MgO)-based ceramics and evaluate them under mass-production plasma etching conditions. The results of this study indicate that the developed MgO-based ceramics with high mechanical properties and low electric resistivity have a higher resistance to corrosion in plasma etching using CF4 gas than Si and conventional ceramic materials such as aluminum oxide and yttrium oxide.

Low-k SiOCH Film Etching Process and Its Diagnostics Employing Ar/C5F10O/N2 Plasma

NASA Astrophysics Data System (ADS)

Nagai, Mikio; Hayashi, Takayuki; Hori, Masaru; Okamoto, Hidekazu

2006-09-01

We proposed an environmental harmonic etching gas of C5F10O (CF3CF2CF2OCFCF2), and demonstrated the etching of low-k SiOCH films employing a dual-frequency capacitively coupled etching system. Dissociative ionization cross sections for the electron impact ionizations of C5F10O and c-C4F8 gases have been measured by quadrupole mass spectroscopy (QMS). The dissociative ionization cross section of CF3+ from C5F10O gas was much higher than those of other ionic species, and 10 times higher than that of CF3+ from C4F8 gas. CF3+ is effective for increasing the etching rate of SiO2. As a result, the etching rate of SiOCH films using Ar/C5F10O/N2 plasma was about 1000 nm/min, which is much higher than that using Ar/C4F8/N2 plasma. The behaviours of fluorocarbon radicals in Ar/C5F10O/N2 plasma, which were measured by infrared diode laser absorption spectroscopy, were similar to those in Ar/C4F8/N2 plasma. The densities of CF and CF3 radicals were markedly decreased with increasing N2 flow rate. Etching rate was controlled by N2 flow rate. A vertical profile of SiOCH with a high etching rate and less microloading was realized using Ar/C5F10O/N2 plasma chemistry.

Etching Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma

NASA Astrophysics Data System (ADS)

Miyawaki, Yudai; Shibata, Emi; Kondo, Yusuke; Takeda, Keigo; Kondo, Hiroki; Ishikawa, Kenji; Okamoto, Hidekazu; Sekine, Makoto; Hori, Masaru

2013-02-01

The etching rates of low-dielectric-constant (low-k), porous SiOCH (p-SiOCH) films were increased by nitrogen-added Ar/C5F10O plasma etching in dual-frequency (60 MHz/2 MHz)-excited parallel plate capacitively coupled plasma. Previously, perfluoropropyl vinyl ether [C5F10O] provided a very high density of CF3+ ions [Nagai et al.: Jpn. J. Appl. Phys. 45 (2006) 7100]. Surface nitridation on the p-SiOCH surface exposed to Ar/N2 plasma led to the etching of larger amounts of p-SiOCH in Ar/C5F10O plasma, which depended on the formation of bonds such as =C(sp2)=N(sp2)- and -C(sp)≡N(sp).

Investigations of plasma induced effects on the surface properties of lignocellulosic natural coir fibres

NASA Astrophysics Data System (ADS)

Praveen, K. M.; Thomas, Sabu; Grohens, Yves; Mozetič, Miran; Junkar, Ita; Primc, Gregor; Gorjanc, Marija

2016-04-01

The development of lignocellulosic natural-fibre-reinforced polymers composites are constrained by two limitations: the upper temperature at which the fibre can be processed and the significant differences between the surface energy of the fibre and the polymer matrix. Since the fibres and matrices are chemically different, strong adhesion at their interface is needed for the effective transfer of stress and bond distribution throughout the interface. The present study investigated the plasma induced effects on the surface properties of natural coir fibres. Weakly ionized oxygen plasma was created in two different discharge chambers by an inductively coupled radiofrequency (RF) discharge. The water absorption studies showed an increase of water sorption from 39% to 100%. The morphological study using scanning electron microscopy (SEM) analysis also confirmed the surface changes which were observed after the plasma treatment. The topographic measurements and phase imaging done using atomic force microscopy (AFM) indicated difference in topographic features and etching of coir wall, which points to the removal of the first layer of coir fibre. X-ray photoelectron spectroscopy (XPS) analysis revealed that the oxygen content measured for samples treated at 50 Pa increased from initial 18% to about 32%.

Method for dry etching of transition metals

DOEpatents

Ashby, C.I.H.; Baca, A.G.; Esherick, P.; Parmeter, J.E.; Rieger, D.J.; Shul, R.J.

1998-09-29

A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.

Method for dry etching of transition metals

DOEpatents

Ashby, Carol I. H.; Baca, Albert G.; Esherick, Peter; Parmeter, John E.; Rieger, Dennis J.; Shul, Randy J.

1998-01-01

A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma

NASA Astrophysics Data System (ADS)

Minami, Masaki; Tomiya, Shigetaka; Ishikawa, Kenji; Matsumoto, Ryosuke; Chen, Shang; Fukasawa, Masanaga; Uesawa, Fumikatsu; Sekine, Makoto; Hori, Masaru; Tatsumi, Tetsuya

2011-08-01

GaN-based optical devices are fabricated using a GaN/InGaN/GaN sandwiched structure. The effect of radicals, ions, and UV light on the GaN optical properties during Cl2/SiCl4/Ar plasma etching was evaluated using photoluminescence (PL) analysis. The samples were exposed to plasma (radicals, ions, and UV light) using an inductively coupled plasma (ICP) etching system and a plasma ion beam apparatus that can separate the effects of UV and ions both with and without covering the SiO2 window on the surface. Etching damage in an InGaN single quantum well (SQW) was formed by exposing the sample to plasma. The damage, which decreases PL emission intensity, was generated not only by ion beam irradiation but also by UV light irradiation. PL intensity decreased when the thickness of the upper GaN layer was etched to less than 60 nm. In addition, simultaneous irradiation of UV light and ions slightly increased the degree of damage. There seems to be a synergistic effect between the UV light and the ions. For high-quality GaN-based optoelectronics and power devices, UV light must be controlled during etching processes in addition to the etching profile, selectivity, and ion bombardment damage.

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO{sub 2} using cyclic Ar/C{sub 4}F{sub 8} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawakami, Masatoshi; Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu

2016-07-15

The authors studied the effect of the temperature and chemical state of the chamber wall on process performance for atomic layer etching of SiO{sub 2} using a steady-state Ar plasma, periodic injection of a defined number of C{sub 4}F{sub 8} molecules, and synchronized plasma-based Ar{sup +} ion bombardment. To evaluate these effects, the authors measured the quartz coupling window temperature. The plasma gas phase chemistry was characterized using optical emission spectroscopy. It was found that although the thickness of the polymer film deposited in each cycle is constant, the etching behavior changed, which is likely related to a change inmore » the plasma gas phase chemistry. The authors found that the main gas phase changes occur after C{sub 4}F{sub 8} injection. The C{sub 4}F{sub 8} and the quartz window react and generate SiF and CO. The emission intensity changes with wall surface state and temperature. Therefore, changes in the plasma gas species generation can lead to a shift in etching performance during processing. During initial cycles, minimal etching is observed, while etching gradually increases with cycle number.« less

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Hu; Muraki, Yu; Karahashi, Kazuhiro

2015-07-15

Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH{sub 3}) or methanol (CH{sub 3}OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputtering yield) of the hard mask materials such as Ta. In this study, it is shown that, during Ta etching by energetic CO{sup +}more » or N{sup +} ions, suboxides or subnitrides are formed on the Ta surface, which reduces the apparent sputtering yield of Ta. It is also shown that the sputtering yield of Ta by energetic CO{sup +} or N{sup +} ions has a strong dependence on the angle of ion incidence, which suggests a correlation between the sputtering yield and the oxidation states of Ta in the suboxide or subnitride; the higher the oxidation state of Ta, the lower is the sputtering yield. These data account for the observed etch selectivity by CO/NH{sub 3} and CH{sub 3}OH plasmas.« less

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

In-situ etch rate study of Hf{sub x}La{sub y}O{sub z} in Cl{sub 2}/BCl{sub 3} plasmas using the quartz crystal microbalance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marchack, Nathan; Kim, Taeseung; Chang, Jane P., E-mail: jpchang@seas.ucla.edu

2015-05-15

The etch rate of Hf{sub x}La{sub y}O{sub z} films in Cl{sub 2}/BCl{sub 3} plasmas was measured in-situ in an inductively coupled plasma reactor using a quartz crystal microbalance and corroborated by cross-sectional SEM measurements. The etch rate depended on the ion energy as well as the plasma chemistry. In contrast to other Hf-based ternary oxides, the etch rate of Hf{sub x}La{sub y}O{sub z} films was higher in Cl{sub 2} than in BCl{sub 3}. In the etching of Hf{sub 0.25}La{sub 0.12}O{sub 0.63}, Hf appeared to be preferentially removed in Cl{sub 2} plasmas, per surface compositional analysis by x-ray photoelectron spectroscopy andmore » the detection of HfCl{sub 3} generation in mass spectroscopy. These findings were consistent with the higher etch rate of Hf{sub 0.25}La{sub 0.12}O{sub 0.63} than that of La{sub 2}O{sub 3}.« less

Fourier Transform Infrared Absorption Spectroscopy of Gas-Phase and Surface Reaction Products during Si Etching in Inductively Coupled Cl2 Plasmas

NASA Astrophysics Data System (ADS)

Miyata, Hiroki; Tsuda, Hirotaka; Fukushima, Daisuke; Takao, Yoshinori; Eriguchi, Koji; Ono, Kouichi

2011-10-01

A better understanding of plasma-surface interactions is indispensable during etching, including the behavior of reaction or etch products, because the products on surfaces and in the plasma are important in passivation layer formation through their redeposition on surfaces. In practice, the nanometer-scale control of plasma etching would still rely largely on such passivation layer formation as well as ion-enhanced etching on feature surfaces. This paper presents in situ Fourier transform infrared (FTIR) absorption spectroscopy of gas-phase and surface reaction products during inductively coupled plasma (ICP) etching of Si in Cl2. The observation was made in the gas phase by transmission absorption spectroscopy (TAS), and also on the substrate surface by reflection absorption spectroscopy (RAS). The quantum chemical calculation was also made of the vibrational frequency of silicon chloride molecules. The deconvolution of the TAS spectrum revealed absorption features of Si2Cl6 and SiClx (x = 1-3) as well as SiCl4, while that of the RAS spectrum revealed relatively increased absorption features of unsaturated silicon chlorides. A different behavior was also observed in bias power dependence between the TAS and RAS spectra.

Nanostructured light-absorbing crystalline CuIn(1-x)GaxSe2 thin films grown through high flux, low energy ion irradiation

NASA Astrophysics Data System (ADS)

Hall, Allen J.; Hebert, Damon; Shah, Amish B.; Bettge, Martin; Rockett, Angus A.

2013-10-01

A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn1-xGaxSe2 thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620-740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600-670 °C) and high rf power (80-400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by {112}T facets. At 80-400 W rf power and 640-740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong {112}T texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0-50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of {112}T planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

Efficient Radio Frequency Inductive Discharges in Near Atmospheric Pressure Using Immittance Conversion Topology

NASA Astrophysics Data System (ADS)

Razzak, M. Abdur; Takamura, Shuichi; Uesugi, Yoshihiko; Ohno, Noriyasu

A radio frequency (rf) inductive discharge in atmospheric pressure range requires high voltage in the initial startup phase and high power during the steady state sustainment phase. It is, therefore, necessary to inject high rf power into the plasma ensuring the maximum use of the power source, especially where the rf power is limited. In order to inject the maximum possible rf power into the plasma with a moderate rf power source of few kilowatts range, we employ the immittance conversion topology by converting a constant voltage source into a constant current source to generate efficient rf discharge by inductively coupled plasma (ICP) technique at a gas pressure with up to one atmosphere in argon. A novel T-LCL immittance circuit is designed for constant-current high-power operation, which is practically very important in the high-frequency range, to provide high effective rf power to the plasma. The immittance conversion system combines the static induction transistor (SIT)-based radio frequency (rf) high-power inverter circuit and the immittance conversion elements including the rf induction coil. The basic properties of the immittance circuit are studied by numerical analysis and verified the results by experimental measurements with the inductive plasma as a load at a relatively high rf power of about 4 kW. The performances of the immittance circuit are also evaluated and compared with that of the conventional series resonance circuit in high-pressure induction plasma generation. The experimental results reveal that the immittance conversion circuit confirms injecting higher effective rf power into the plasma as much as three times than that of the series resonance circuit under the same operating conditions and same dc supply voltage to the inverter, thereby enhancing the plasma heating efficiency to generate efficient rf inductive discharges.

Effect of reactor loading on atomic oxygen concentration as measured by NO chemiluminescence

NASA Technical Reports Server (NTRS)

Lerner, N. R.

1989-01-01

It has previously been observed that the etch rate of polyethylene samples in the afterglow of an RF discharge in oxygen increases with reactor loading. This enhancement of the etch rate is attributed to reactive gas phase products of the polymer etching. In the present work, emission spectroscopy is employed to examine the species present in the gas phase during etching of polyethylene. In particular, the concentration of atomic oxygen downstream from the polyethylene samples is studied as a function of the reactor loading. It is found that the concentration of atomic oxygen increases as the reactor loading is increased. The increase of etch rate with increased reactor loading is attributed to the increase of atomic oxygen concentration in the vicinity of the sample.

Studies of RF sheaths and diagnostics on IShTAR

NASA Astrophysics Data System (ADS)

Crombé, K.; Devaux, S.; D'Inca, R.; Faudot, E.; Faugel, H.; Fünfgelder, H.; Heuraux, S.; Jacquot, J.; Louche, F.; Moritz, J.; Ochoukov, R.; Tripsky, M.; Van Eester, D.; Wauters, T.; Noterdaeme, J.-M.

2015-12-01

IShTAR (Ion cyclotron Sheath Test ARrangement) is a linear magnetised plasma test facility for RF sheaths studies at the Max-Planck-Institut für Plasmaphysik in Garching. In contrast to a tokamak, a test stand provides more liberty to impose the parameters and gives better access for the instrumentation and antennas. The project will support the development of diagnostic methods for characterising RF sheaths and validate and improve theoretical predictions. The cylindrical vacuum vessel has a diameter of 1 m and is 1.1 m long. The plasma is created by an external cylindrical plasma source equipped with a helical antenna that has been designed to excite the m=1 helicon mode. In inductive mode, plasma densities and electron temperatures have been characterised with a planar Langmuir probe as a function of gas pressure and input RF power. A 2D array of RF compensated Langmuir probes and a spectrometer are planned. A single strap RF antenna has been designed; the plasma-facing surface is aligned to the cylindrical plasma to ease the modelling. The probes will allow direct measurements of plasma density profiles in front of the RF antenna, and thus a detailed study of the density modifications induced by RF sheaths, which influences the coupling. The RF antenna frequency has been chosen to study different plasma wave interactions: the accessible plasma density range includes an evanescent and propagative behaviour of slow or fast waves, and allows the study of the effect of the lower hybrid resonance layer.

Self-formation of a nanonet of fluorinated carbon nanowires on the Si surface by combined etching in fluorine-containing plasma

NASA Astrophysics Data System (ADS)

Amirov, I. I.; Gorlachev, E. S.; Mazaletskiy, L. A.; Izyumov, M. O.; Alov, N. V.

2018-03-01

In this work, we report a technique of the self-formation of a nanonet of fluorinated carbon nanowires on the Si surface using a combined etching in fluorine-containing C4F8/Ar and SF6 plasmas. Using scanning electron microscopy, atomic force microscopy and x-ray photoelectron spectroscopy, we show that after the etching of Si in the C4F8/Ar plasma, a fluorinated carbon film of nanometer-scale thickness is formed on its surface and its formation accelerates at elevated temperatures. After a subsequent short-term etching in the SF6 plasma, the film is modified into a nanonet of self-formed fluorinated carbon nanowires.

Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

NASA Astrophysics Data System (ADS)

Hess, D. W.

1986-05-01

Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

Effects of gas flow rate on the etch characteristics of a low- k sicoh film with an amorphous carbon mask in dual-frequency CF4/C4F8/Ar capacitively-coupled plasmas

NASA Astrophysics Data System (ADS)

Kwon, Bong-Soo; Lee, Hea-Lim; Lee, Nae-Eung; Kim, Chang-Young; Choi, Chi Kyu

2013-01-01

Highly selective nanoscale etching of a low-dielectric constant (low- k) organosilicate (SiCOH) layer using a mask pattern of chemical-vapor-deposited (CVD) amorphous carbon layer (ACL) was carried out in CF4/C4F8/Ar dual-frequency superimposed capacitively-coupled plasmas. The etching characteristics of the SiCOH layers, such as the etch rate, etch selectivity, critical dimension (CD), and line edge roughness (LER) during the plasma etching, were investigated by varying the C4F8 flow rate. The C4F8 gas flow rate primarily was found to control the degree of polymerization and to cause variations in the selectivity, CD and LER of the patterned SiCOH layer. Process windows for ultra-high etch selectivity of the SiCOH layer to the CVD ACL are formed due to the disproportionate degrees of polymerization on the SiCOH and the ACL surfaces.

Anisotropic selective etching between SiGe and Si

NASA Astrophysics Data System (ADS)

Ishii, Yohei; Scott-McCabe, Ritchie; Yu, Alex; Okuma, Kazumasa; Maeda, Kenji; Sebastian, Joseph; Manos, Jim

2018-06-01

In Si/SiGe dual-channel FinFETs, it is necessary to simultaneously control the etched amounts of SiGe and Si. However, the SiGe etch rate is higher than the Si etch rate in not only halogen plasmas but also physical sputtering. In this study, we found that hydrogen plasma selectively etches Si over SiGe. The result shows that the selectivity of Si over SiGe can be up to 38 with increasing Ge concentration in SiGe. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) results indicate that hydrogen selectively bonds with Si rather than with Ge in SiGe. During the etching, hydrogen-induced Si surface segregation is also observed. It is also observed that the difference in etched amount between SiGe and Si can be controlled from positive to negative values even in Si/SiGe dual-channel fin patterning while maintaining the vertical profiles. Furthermore, no plasma-induced lattice damage was observed by transmission electron microscopy for both Si and SiGe fin sidewalls.

Surface improvement of EPDM rubber by plasma treatment

NASA Astrophysics Data System (ADS)

Moraes, J. H.; da Silva Sobrinho, A. S.; Maciel, H. S.; Dutra, J. C. N.; Massi, M.; Mello, S. A. C.; Schreiner, W. H.

2007-12-01

The surface of ethylene-propylene-diene monomer (EPDM) rubber was treated in N2/Ar and N2/H2/Ar RF plasmas in order to achieve similar or better adhesion properties than NBR (acrylonitrile-butadiene) rubber, nowadays used as thermal protection of rocket chambers. The surface properties were studied by contact angle measurements and by x-ray photoelectron spectroscopy (XPS). The treated surfaces of the EPDM samples show a significant reduction in the contact angle measurement, indicating an increase in the surface energy. XPS analyses show the incorporation of polar nitrogen- and oxygen-containing groups on the rubber surface. After plasma treatment the presence of oxygen is observed due to surface oxidation which occurs when the samples are exposed to the air. Atomic force microscopy and scanning electron microscopy analyses indicate a decrease in the EPDM rubber surface roughness, promoted by surface etching during the plasma treatment. Strength tests indicate improvement of about 30% and 110% in the adhesion strength for the plasma treated EPDM/polyurethane liner interface and for the EPDM/epoxy adhesive interface, respectively. The adhesion strength of the EPDM/liner is similar to that obtained for the NBR/liner, which indicates that EPDM rubber can safely be used as thermal protection of the solid propellant rocket chamber.

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

NASA Astrophysics Data System (ADS)

Song, Junqiang; Shi, Xun; Chen, Lidong

2014-10-01

Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

NASA Astrophysics Data System (ADS)

Bérubé, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

2009-09-01

The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited CaxBa(1-x)Nb2O6 (CBN) and SrTiO3 thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl2 plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl2 and BaCl2 compounds being the rate-limiting step.

The dependence of the sporicidal effects on the power and pressure of RF-generated plasma processes.

PubMed

Lassen, Klaus S; Nordby, Bolette; Grün, Reinar

2005-07-01

The sporicidal effect of 20 different radio-frequency plasma processes produced by combining five different gas mixtures [O(2), Ar/H(2) (50/50%), Ar/H(2) (5/95%), O(2)/H(2) (50/50%), O(2)/H(2) (95/5%)] with four power/pressure settings were tested. Sporicidal effects of oxygen-containing plasmas were dependent on power at low pressure settings but not at high pressure settings. In the absence of oxygen no power dependency was observed at either high or low pressure settings. Survivor curves obtained with the use of nonoxygen plasmas typically had a tailing tendency. Only a mixture-optimized Ar/H(2) (15/85%) plasma process was not encumbered by tailing, and produced a decimal reduction time (D value) below 2 min for Bacillus stearothermophilus spores. Scanning electron microscopy showed that a CF(4)/O(2) plasma did more damage to the substrate than the 15/85% Ar/H(2) plasma. The present results indicate that UV irradiation inactivation is swift and power and pressure independent. Additionally, it is produced at low energy. However, it is not complete. Inactivation through etching is highly power and pressure dependent; finally, inactivation by photodesorption is moderately power and pressure dependent. A sterilization process relying on this mechanism is very advantageous because it combines a highly sporicidal effect with low substrate damage. Copyright 2005 Wiley Periodicals, Inc.

Plasma & reactive ion etching to prepare ohmic contacts

DOEpatents

Gessert, Timothy A.

2002-01-01

A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac){sub 2} reactions and enhancement by H{sub 2} and Ar plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Nicholas R.; Sun, Huaxing; Sharma, Kashish

2016-09-15

Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin(II) acetylacetonate [Sn(acac){sub 2}] as the reactants. Film thicknesses were monitored versus number of ALE reaction cycles at 275 °C using in situ spectroscopic ellipsometry (SE). A low etch rate of ∼0.07 Å/cycle was measured during etching of the first 40 Å of the film. This small etch rate corresponded with the AlO{sub x}N{sub y} layer on the AlN film. The etch rate then increased to ∼0.36 Å/cycle for the pure AlN films. In situ SE experiments established the HF and Sn(acac){submore » 2} exposures that were necessary for self-limiting surface reactions. In the proposed reaction mechanism for thermal AlN ALE, HF fluorinates the AlN film and produces an AlF{sub 3} layer on the surface. The metal precursor, Sn(acac){sub 2}, then accepts fluorine from the AlF{sub 3} layer and transfers an acac ligand to the AlF{sub 3} layer in a ligand-exchange reaction. The possible volatile etch products are SnF(acac) and either Al(acac){sub 3} or AlF(acac){sub 2}. Adding a H{sub 2} plasma exposure after each Sn(acac){sub 2} exposure dramatically increased the AlN etch rate from 0.36 to 1.96 Å/cycle. This enhanced etch rate is believed to result from the ability of the H{sub 2} plasma to remove acac surface species that may limit the AlN etch rate. The active agent from the H{sub 2} plasma is either hydrogen radicals or radiation. Adding an Ar plasma exposure after each Sn(acac){sub 2} exposure increased the AlN etch rate from 0.36 to 0.66 Å/cycle. This enhanced etch rate is attributed to either ions or radiation from the Ar plasma that may also lead to the desorption of acac surface species.« less

A method to accelerate creation of plasma etch recipes using physics and Bayesian statistics

NASA Astrophysics Data System (ADS)

Chopra, Meghali J.; Verma, Rahul; Lane, Austin; Willson, C. G.; Bonnecaze, Roger T.

2017-03-01

Next generation semiconductor technologies like high density memory storage require precise 2D and 3D nanopatterns. Plasma etching processes are essential to achieving the nanoscale precision required for these structures. Current plasma process development methods rely primarily on iterative trial and error or factorial design of experiment (DOE) to define the plasma process space. Here we evaluate the efficacy of the software tool Recipe Optimization for Deposition and Etching (RODEo) against standard industry methods at determining the process parameters of a high density O2 plasma system with three case studies. In the first case study, we demonstrate that RODEo is able to predict etch rates more accurately than a regression model based on a full factorial design while using 40% fewer experiments. In the second case study, we demonstrate that RODEo performs significantly better than a full factorial DOE at identifying optimal process conditions to maximize anisotropy. In the third case study we experimentally show how RODEo maximizes etch rates while using half the experiments of a full factorial DOE method. With enhanced process predictions and more accurate maps of the process space, RODEo reduces the number of experiments required to develop and optimize plasma processes.

Etching in Chlorine Discharges Using an Integrated Feature Evolution-Plasma Model

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Bose, Deepak; Govindan, T. R.; Meyyappan, M.; Biegel, Bryan (Technical Monitor)

2001-01-01

Etching of semiconductor materials is reliant on plasma properties. Quantities such as ion and neutral fluxes, both in magnitude and in direction, are often determined by reactor geometry (height, radius, position of the coils, etc.) In order to obtain accurate etching profiles, one must also model the plasma as a whole to obtain local fluxes and distributions. We have developed a set of three models that simulates C12 plasmas for etching of silicon, ion and neutral trajectories in the plasma, and feature profile evolution. We have found that the location of the peak in the ion densities in the reactor plays a major role in determining etching uniformity across the wafer. For a stove top coil inductively coupled plasma (ICP), the ion density is peaked at the top of the reactor. This leads to nearly uniform neutral and ion fluxes across the wafer. A side coil configuration causes the ion density to peak near the sidewalls. Ion fluxes are thus greater toward the wall's and decrease toward the center. In addition, the ions bombard the wafer at a slight angle. This angle is sufficient to cause slanted profiles, which is highly undesirable.

Studies of RF sheaths and diagnostics on IShTAR

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crombé, K., E-mail: Kristel.Crombe@UGent.be; LPP-ERM/KMS, Royal Military Academy, Brussels; Devaux, S.

2015-12-10

IShTAR (Ion cyclotron Sheath Test ARrangement) is a linear magnetised plasma test facility for RF sheaths studies at the Max-Planck-Institut für Plasmaphysik in Garching. In contrast to a tokamak, a test stand provides more liberty to impose the parameters and gives better access for the instrumentation and antennas. The project will support the development of diagnostic methods for characterising RF sheaths and validate and improve theoretical predictions. The cylindrical vacuum vessel has a diameter of 1 m and is 1.1 m long. The plasma is created by an external cylindrical plasma source equipped with a helical antenna that has been designed tomore » excite the m=1 helicon mode. In inductive mode, plasma densities and electron temperatures have been characterised with a planar Langmuir probe as a function of gas pressure and input RF power. A 2D array of RF compensated Langmuir probes and a spectrometer are planned. A single strap RF antenna has been designed; the plasma-facing surface is aligned to the cylindrical plasma to ease the modelling. The probes will allow direct measurements of plasma density profiles in front of the RF antenna, and thus a detailed study of the density modifications induced by RF sheaths, which influences the coupling. The RF antenna frequency has been chosen to study different plasma wave interactions: the accessible plasma density range includes an evanescent and propagative behaviour of slow or fast waves, and allows the study of the effect of the lower hybrid resonance layer.« less

Feature Profile Evolution of SiO2 Trenches In Fluorocarbon Plasmas

NASA Technical Reports Server (NTRS)

Hwang, Helen; Govindan, T. R.; Meyyappan, M.; Arunachalam, Valli; Rauf, Shahid; Coronell, Dan; Carroll, Carol W. (Technical Monitor)

1999-01-01

Etching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.

Diagnostics of N2 Ar plasma mixture excited in a 13.56 MHz hollow cathode discharge system: application to remote plasma treatment of polyamide surface

NASA Astrophysics Data System (ADS)

Saloum, S.; Naddaf, M.; Alkhaled, B.

2008-02-01

N2-x% Ar plasma gas mixture, generated in a hollow cathode RF discharge system, has been characterized by both optical emission spectroscopy (OES) and double Langmuir probe, as a function of experimental parameters: total pressure (5-33 Pa), and different fractions of argon (7 <= x <= 80), at a constant applied RF power of 300 W. N2 dissociation degree has been investigated qualitatively by both the actinometry method and the ratio I_N/I_{N_2} of the atomic nitrogen line emission intensity at 672.3 nm to the vibrational band (0-0) of the N2 second positive system at 337.1 nm. Both methods showed that the increase in argon fraction enhances the dissociation of N2, with a maximum at x = 50 for the pressure of 5 Pa, although the two methods give two opposite trends as a function of total pressure. Spectroscopic measurements showed that the vibrational temperature of the N2 second positive system increases with both argon fraction and total pressure increase, it lies between 4900 and 12 300 K. Langmuir probe measurements showed that, in the remote zone, the electron temperature falls in the range 1.57-1.75 eV, the N_{2}^{+} density varies between 5 × 109 and 1.4 × 1010 cm-3 and that both the plasma ionization degree and electron temperature increase towards the source. In addition, the process of plasma-polyamide (PA) surface interaction, in the remote plasma zone, has been studied through OES analysis during plasma treatment of PA to monitor the possible emissions due to the polymer etching. An increase in atomic nitrogen line (672.3 nm) intensity is obtained, atomic carbon line (833.52 nm) and the band emission (0-0) from the CN (B 2Σ+-X 2Σ+) violet system were observed. The PA surface modification has been confirmed through the improvement of its hydrophilic character as the water contact angle measured after the plasma treatment significantly decreased.

Single clay sheets inside electrospun polymer nanofibers

NASA Astrophysics Data System (ADS)

Sun, Zhaohui

2005-03-01

Nanofibers were prepared from polymer solution with clay sheets by electrospinning. Plasma etching, as a well controlled process, was used to supply electrically excited gas molecules from a glow discharge. To reveal the structure and arrangement of clay layers in the polymer matrix, plasma etching was used to remove the polymer by controlled gasification to expose the clay sheets due to the difference in reactivity. The shape, flexibility, and orientation of clay sheets were studied by transmission and scanning electron microscopy. Additional quantitative information on size distribution and degree of exfoliation of clay sheets were obtained by analyzing electron micrograph of sample after plasma etching. Samples in various forms including fiber, film and bulk, were thinned by plasma etching. Morphology and dispersion of inorganic fillers were studied by electron microscopy.

Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

NASA Astrophysics Data System (ADS)

Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

2017-06-01

The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6

NASA Astrophysics Data System (ADS)

Ostermaier, Clemens; Pozzovivo, Gianmauro; Basnar, Bernhard; Schrenk, Werner; Carlin, Jean-François; Gonschorek, Marcus; Grandjean, Nicolas; Vincze, Andrej; Tóth, Lajos; Pécz, Bela; Strasser, Gottfried; Pogany, Dionyz; Kuzmik, Jan

2010-11-01

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

Process Development for Automated Solar Cell and Module Production. Task 4: Automated Array Assembly

NASA Technical Reports Server (NTRS)

1979-01-01

A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.

Non-Equilibrium Plasma MHD Electrical Power Generation at Tokyo Tech

NASA Astrophysics Data System (ADS)

Murakami, T.; Okuno, Y.; Yamasaki, H.

2008-02-01

This paper reviews the recent activities on radio-frequency (rf) electromagnetic-field-assisted magnetohydrodynamic (MHD) power generation experiments at the Tokyo Institute of Technology. An inductively coupled rf field (13.56 MHz) is continuously supplied to the disk-shaped Hall-type MHD generator. The first part of this paper describes a method of obtaining increased power output from a pure Argon plasma MHD power generator by incorporating an rf power source to preionize and heat the plasma. The rf heating enhances ionization of the Argon and raises the temperature of the free electron population above the nominally low 4500 K temperatures obtained without rf heating. This in turn enhances the plasma conductivity making MHD power generation feasible. We demonstrate an enhanced power output when rf heating is on approximately 5 times larger than the input power of the rf generator. The second part of this paper is a demonstration of a physical phenomenon of the rf-stabilization of the ionization instability, that had been conjectured for some time, but had not been seen experimentally. The rf heating suppresses the ionization instability in the plasma behavior and homogenizes the nonuniformity of the plasma structures. The power-generating performance is significantly improved with the aid of the rf power under wide seeding conditions. The increment of the enthalpy extraction ratio of around 2% is significantly greater than the fraction of the net rf power, that is, 0.16%, to the thermal input.

Change in surface properties of zirconia and initial attachment of osteoblastlike cells with hydrophilic treatment.

PubMed

Watanabe, Hiroaki; Saito, Kensuke; Kokubun, Katsutoshi; Sasaki, Hodaka; Yoshinari, Masao

2012-01-01

The objectives of this study were to characterize change in surface properties of tetragonal zirconia polycrystals (TZP) after hydrophilic treatment, and to determine the effect of such changes on initial attachment of osteoblast-like cells. Roughened surfaces were produced by alumina-blasting and acid-etching. Hydrophilic treatment comprised application of immediately after blasting and acid-etching (Blast/Etch), oxygen plasma (O2-Plasma), ultraviolet light (UV). Specimens stored in air were used as a control. The water contact angle was determined and surface analysis was performed using an X-ray photoelectron spectroscopy. Blast/Etch, O2-Plasma and UV specimens showed superhydrophilicity, and these hydrophilic treatments to TZP elicited a marked decrease in carbon content and an increase in hydroxyl groups. Hydrophilic treatments enhanced initial attachment of osteoblast-like cells and a change in cell morphologies. These results indicate that Blast/Etch, O2-Plasma, or UV treatment has potential in the creation and maintenance of superhydrophilic surfaces and enhancing initial attachment of osteoblast-like cells.

Oxygen and nitrogen plasma etching of three-dimensional hydroxyapatite/chitosan scaffolds fabricated by additive manufacturing

NASA Astrophysics Data System (ADS)

Myung, Sung-Woon; Kim, Byung-Hoon

2016-01-01

Three-dimensional (3D) chitosan and hydroxyapatite (HAp)/chitosan (CH) scaffolds were fabricated by additive manufacturing, then their surfaces were etched with oxygen (O2) and nitrogen (N2) plasma. O2 and N2 plasma etching was performed to increase surface properties such as hydrophilicity, roughness, and surface chemistry on the scaffolds. After etching, hydroxyapatite was exposed on the surface of 3D HAp/CH scaffolds. The surface morphology and chemical properties were characterized by contact angle measurement, scanning electron microscopy, X-ray diffraction, and attenuated total reflection Fourier infrared spectroscopy. The cell viability of 3D chitosan scaffolds was examined by 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide assay. The differentiation of preosteoblast cells was evaluated by alkaline phosphatase assay. The cell viability was improved by O2 and N2 plasma etching of 3D chitosan scaffolds. The present fabrication process for 3D scaffolds might be applied to a potential tool for preparing biocompatible scaffolds.

Diode laser sensor to monitor HCL in a plasma etch reactor

NASA Astrophysics Data System (ADS)

Kim, Suhong; Klimecky, Pete; Chou, Shang-I.; Jeffries, Jay B.; Terry, Fred L., Jr.; Hanson, Ronald K.

2002-09-01

Absorption measurements of HCl during plasma etching of poly-silicon are made using the P(4) transition in the first vibrational overtone band near 1.79 μm. Single path absorption provides a real-time HCl monitor during etching of six-inch wafers in a commercial Lam Research 9400SE reactor at the University of Michigan. Wavelength modulation at 10.7 MHz is used to distinguish the absorption signal from the strong plasma emission. The laser center frequency is ramp-tuned at 500 Hz providing an HCl measurement every 2ms. Direct absorption measurements without the plasma are used to calibrate the wavelength modulation signal. The minimum detectable absorbance was 5x(10)-6 with 50 ms averaging, leading to an HCl detection limit of ~(10)12cm-3. For a given ratio of the feedstock HBr/Cl2, the measured HCl concentration tracks the average etch rate. These measurements demonstrate the feasibility of a real-time diode laser-based etch rate sensor.

Near-infrared diode laser hydrogen fluoride monitor for dielectric etch

NASA Astrophysics Data System (ADS)

Xu, Ning; Pirkle, David R.; Jeffries, Jay B.; McMillin, Brian; Hanson, Ronald K.

2004-11-01

A hydrogen fluoride (HF) monitor, using a tunable diode laser, is designed and used to detect the etch endpoints for dielectric film etching in a commercial plasma reactor. The reactor plasma contains HF, a reaction product of feedstock gas CF4 and the hydrogen-containing films (photoresist, SiOCH) on the substrate. A near-infrared diode laser is used to scan the P(3) transition in the first overtone of HF near 1.31 μm to monitor changes in the level of HF concentration in the plasma. Using 200 ms averaging and a signal modulation technique, we estimate a minimum detectable HF absorbance of 6×10-5 in the etch plasma, corresponding to an HF partial pressure of 0.03 mTorr. The sensor could indicate, in situ, the SiOCH over tetraethoxysilane oxide (TEOS) trench endpoint, which was not readily discerned by optical emission. These measurements demonstrate the feasibility of a real-time diode laser-based sensor for etch endpoint monitoring and a potential for process control.

Integral electrical characteristics and local plasma parameters of a RF ion thruster

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masherov, P. E.; Riaby, V. A., E-mail: riaby2001@yahoo.com; Godyak, V. A.

2016-02-15

Comprehensive diagnostics has been carried out for a RF ion thruster based on inductively coupled plasma (ICP) source with an external flat antenna coil enhanced by ferrite core. The ICP was confined within a cylindrical chamber with low aspect ratio to minimize plasma loss to the chamber wall. Integral diagnostics of the ICP electrical parameters (RF power balance and coil current) allowed for evaluation of the antenna coils, matching networks, and eddy current loss and the true RF power deposited to plasma. Spatially resolved electron energy distribution functions, plasma density, electron temperatures, and plasma potentials were measured with movable Langmuirmore » probes.« less

3-Dimensional Modeling of Capacitively and Inductively Coupled Plasma Etching Systems

NASA Astrophysics Data System (ADS)

Rauf, Shahid

2008-10-01

Low temperature plasmas are widely used for thin film etching during micro and nano-electronic device fabrication. Fluid and hybrid plasma models were developed 15-20 years ago to understand the fundamentals of these plasmas and plasma etching. These models have significantly evolved since then, and are now a major tool used for new plasma hardware design and problem resolution. Plasma etching is a complex physical phenomenon, where inter-coupled plasma, electromagnetic, fluid dynamics, and thermal effects all have a major influence. The next frontier in the evolution of fluid-based plasma models is where these models are able to self-consistently treat the inter-coupling of plasma physics with fluid dynamics, electromagnetics, heat transfer and magnetostatics. We describe one such model in this paper and illustrate its use in solving engineering problems of interest for next generation plasma etcher design. Our 3-dimensional plasma model includes the full set of Maxwell equations, transport equations for all charged and neutral species in the plasma, the Navier-Stokes equation for fluid flow, and Kirchhoff's equations for the lumped external circuit. This model also includes Monte Carlo based kinetic models for secondary electrons and stochastic heating, and can take account of plasma chemistry. This modeling formalism allows us to self-consistently treat the dynamics in commercial inductively and capacitively coupled plasma etching reactors with realistic plasma chemistries, magnetic fields, and reactor geometries. We are also able to investigate the influence of the distributed electromagnetic circuit at very high frequencies (VHF) on the plasma dynamics. The model is used to assess the impact of azimuthal asymmetries in plasma reactor design (e.g., off-center pump, 3D magnetic field, slit valve, flow restrictor) on plasma characteristics at frequencies from 2 -- 180 MHz. With Jason Kenney, Ankur Agarwal, Ajit Balakrishna, Kallol Bera, and Ken Collins.

Correlation of III/V semiconductor etch results with physical parameters of high-density reactive plasmas excited by electron cyclotron resonance

NASA Astrophysics Data System (ADS)

Gerhard, FRANZ; Ralf, MEYER; Markus-Christian, AMANN

2017-12-01

Reactive ion etching is the interaction of reactive plasmas with surfaces. To obtain a detailed understanding of this process, significant properties of reactive composite low-pressure plasmas driven by electron cyclotron resonance (ECR) were investigated and compared with the radial uniformity of the etch rate. The determination of the electronic properties of chlorine- and hydrogen-containing plasmas enabled the understanding of the pressure-dependent behavior of the plasma density and provided better insights into the electronic parameters of reactive etch gases. From the electrical evaluation of I(V) characteristics obtained using a Langmuir probe, plasmas of different compositions were investigated. The standard method of Druyvesteyn to derive the electron energy distribution functions by the second derivative of the I(V) characteristics was replaced by a mathematical model which has been evolved to be more robust against noise, mainly, because the first derivative of the I(V) characteristics is used. Special attention was given to the power of the energy dependence in the exponent. In particular, for plasmas that are generated by ECR with EM modes, the existence of Maxwellian distribution functions is not to be taken as a self-evident fact, but the bi-Maxwellian distribution was proven for Ar- and Kr-stabilized plasmas. In addition to the electron temperature, the global uniform discharge model has been shown to be useful for calculating the neutral gas temperature. To what extent the invasive method of using a Langmuir probe could be replaced with the non-invasive optical method of emission spectroscopy, particularly actinometry, was investigated, and the resulting data exhibited the same relative behavior as the Langmuir data. The correlation with etchrate data reveals the large chemical part of the removal process—most striking when the data is compared with etching in pure argon. Although the relative amount of the radial variation of plasma density and etch rate is approximately +/- 5 % , the etch rate shows a slightly concave shape in contrast to the plasma density.

Study of Gallium Arsenide Etching in a DC Discharge in Low-Pressure HCl-Containing Mixtures

NASA Astrophysics Data System (ADS)

Dunaev, A. V.; Murin, D. B.

2018-04-01

Halogen-containing plasmas are often used to form topological structures on semiconductor surfaces; therefore, spectral monitoring of the etching process is an important diagnostic tool in modern electronics. In this work, the emission spectra of gas discharges in mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconducting gallium arsenide plate were studied. Spectral lines and bands of the GaAs etching products appropriate for monitoring the etching rate were determined. It is shown that the emission intensity of the etching products is proportional to the GaAs etching rate in plasmas of HCl mixtures with Ar and Cl2, which makes it possible to monitor the etching process in real time by means of spectral methods.

Radio-frequency power-assisted performance improvement of a magnetohydrodynamic power generator

NASA Astrophysics Data System (ADS)

Murakami, Tomoyuki; Okuno, Yoshihiro; Yamasaki, Hiroyuki

2005-12-01

We describe a radio-frequency (rf) electromagnetic-field-assisted magnetohydrodynamic power generation experiment, where an inductively coupled rf field (13.56MHz, 5.2kW) is continuously supplied to the disk generator. The rf power assists the precise plasma ignition, by which the otherwise irregular plasma behavior was stabilized. The rf heating suppresses the ionization instability in the plasma behavior and homogenizes the nonuniformity of the plasma structures. The power-generating performance is significantly improved with the aid of the rf power under wide seeding conditions: insufficient, optimum, and excessive seed fractions. The increment of the enthalpy extraction ratio of around 2% is significantly greater than the fraction of the net rf power, that is, 0.16%, to the thermal input.

Etching of polymers, proteins and bacterial spores by atmospheric pressure DBD plasma in air

NASA Astrophysics Data System (ADS)

Kuzminova, A.; Kretková, T.; Kylián, O.; Hanuš, J.; Khalakhan, I.; Prukner, V.; Doležalová, E.; Šimek, M.; Biederman, H.

2017-04-01

Many studies proved that non-equilibrium discharges generated at atmospheric pressure are highly effective for the bio-decontamination of surfaces of various materials. One of the key processes that leads to a desired result is plasma etching and thus the evaluation of etching rates of organic materials is of high importance. However, the comparison of reported results is rather difficult if impossible as different authors use diverse sources of atmospheric plasma that are operated at significantly different operational parameters. Therefore, we report here on the systematic study of the etching of nine different common polymers that mimic the different structures of more complicated biological systems, bovine serum albumin (BSA) selected as the model protein and spores of Bacillus subtilis taken as a representative of highly resistant micro-organisms. The treatment of these materials was performed by means of atmospheric pressure dielectric barrier discharge (DBD) sustained in open air at constant conditions. All tested polymers, BSA and spores, were readily etched by DBD plasma. However, the measured etching rates were found to be dependent on the chemical structure of treated materials, namely on the presence of oxygen in the structure of polymers.

Plasma etching a ceramic composite. [evaluating microstructure

NASA Technical Reports Server (NTRS)

Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

1992-01-01

Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaningmore » method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.« less

Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

NASA Astrophysics Data System (ADS)

Matsui, Miyako; Kuwahara, Kenichi

2018-06-01

A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

Selective Plasma Etching of Polymeric Substrates for Advanced Applications

PubMed Central

Puliyalil, Harinarayanan; Cvelbar, Uroš

2016-01-01

In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance. PMID:28335238

Plasma sweeper. [Patents

DOEpatents

Motley, R.W.; Glanz, J.

1982-10-25

A device is described for coupling RF power (a plasma sweeper) from RF power introducing means to a plasma having a magnetic field associated therewith comprises at least one electrode positioned near the plasma and near the RF power introducing means. Means are described for generating a static electric field at the electrode directed into the plasma and having a component substantially perpendicular to the plasma magnetic field such that a non-zero vector cross-product of the electric and magnetic fields exerts a force on the plasma causing the plasma to drift.

Diagnostic study of multiple double layer formation in expanding RF plasma

NASA Astrophysics Data System (ADS)

Chakraborty, Shamik; Paul, Manash Kumar; Roy, Jitendra Nath; Nath, Aparna

2018-03-01

Intensely luminous double layers develop and then expand in size in a visibly glowing RF discharge produced using a plasma source consisting of a semi-transparent cylindrical mesh with a central electrode, in a linear plasma chamber. Although RF discharge is known to be independent of device geometry in the absence of magnetic field, the initiation of RF discharge using such a plasma source results in electron drift and further expansion of the plasma in the vessel. The dynamics of complex plasma structures are studied through electric probe diagnostics in the expanding RF plasma. The measurements made to study the parametric dependence of evolution of double layer structures are analyzed and presented here. The plasma parameter measurements suggest that the complex potential structures initially form with low potential difference between the layers and then gradually expand producing burst oscillations. The present study provides interesting information about the stability of plasma sheath and charge particle dynamics in it that are important to understand the underlying basic sheath physics along with applications in plasma acceleration and propulsion.

Microfabrication of high performance optical diaphragm by plasma ion beam etching technology

NASA Astrophysics Data System (ADS)

Mestreau, Agnes; Bernardet, Henri; Dancoing, Guy; Godechot, Xavier; Pezant, Christian; Stenger, Vincent; Cousin, Bernard; Etcheto, Pierre; Otrio, Georges

2018-04-01

This paper, "Microfabrication of high performance optical diaphragm by plasma ion beam etching technology," was presented as part of International Conference on Space Optics—ICSO 1997, held in Toulouse, France.

Plasma Ion Sources for Atmospheric Pressure Ionization Mass Spectrometry.

NASA Astrophysics Data System (ADS)

Zhao, Jian-Guo

1994-01-01

Atmospheric pressure ionization (API) sources using direct-current (DC) and radio-frequency (RF) plasma have been developed in this thesis work. These ion sources can provide stable discharge currents of ~ 1 mA, 2-3 orders of magnitude larger than that of the corona discharge, a widely used API source. The plasmas can be generated and maintained in 1 atm of various buffer gases by applying -500 to -1000 V (DC plasma) or 1-15 W with a frequency of 165 kHz (RF plasma) on the needle electrode. These ion sources have been used with liquid injection to detect various organic compounds of pharmaceutical, biotechnological and environmental interest. Key features of these ion sources include soft ionization with the protonated molecule as the largest peak, and superb sensitivity with detection limits in the low picogram or femtomole range and a linear dynamic range over ~4 orders of magnitude. The RF plasma has advantages over the DC plasma in its ability to operate in various buffer gases and to produce a more stable plasma. Factors influencing the performance of the ion sources have been studied, including RF power level, liquid flow rate, chamber temperature, solvent composition, and voltage affecting the collision induced dissociation (CID). Ionization of hydrocarbons by the RF plasma API source was also studied. Soft ionization is generally produced. To obtain high sensitivity, the ion source must be very dry and the needle-to-orifice distance must be small. Nitric oxide was used to enhance the sensitivity. The RF plasma source was then used for the analysis of hydrocarbons in auto emissions. Comparisons between the corona discharge and the RF plasma have been made in terms of discharge current, ion residence time, and the ion source model. The RF plasma source provides larger linear dynamic range and higher sensitivity than the corona discharge, due to its much larger discharge current. The RF plasma was also observed to provide longer ion residence times and was not limited by space-charge effect as in the corona source.

Plasma surface modification of polypropylene track-etched membrane to improve its performance properties

NASA Astrophysics Data System (ADS)

Kravets, L. I.; Elinson, V. M.; Ibragimov, R. G.; Mitu, B.; Dinescu, G.

2018-02-01

The surface and electrochemical properties of polypropylene track-etched membrane treated by plasma of nitrogen, air and oxygen are studied. The effect of the plasma-forming gas composition on the surface morphology is considered. It has been found that the micro-relief of the membrane surface formed under the gas-discharge etching, changes. Moreover, the effect of the non-polymerizing gas plasma leads to formation of oxygen-containing functional groups, mostly carbonyl and carboxyl. It is shown that due to the formation of polar groups on the surface and its higher roughness, the wettability of the plasma-modified membranes improves. In addition, the presence of polar groups on the membrane surface layer modifies its electrochemical properties so that conductivity of plasma-treated membranes increase.

Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

NASA Astrophysics Data System (ADS)

Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

2018-06-01

This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

Etching method for photoresists or polymers

NASA Technical Reports Server (NTRS)

Lerner, Narcinda R. (Inventor); Wydeven, Theodore J., Jr. (Inventor)

1991-01-01

A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

Cl 2-based dry etching of the AlGaInN system in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Cho, Hyun; Vartuli, C. B.; Abernathy, C. R.; Donovan, S. M.; Pearton, S. J.; Shul, R. J.; Han, J.

1998-12-01

Cl 2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Å·min -1) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N 2, H 2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl 2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained.

Inductively coupled BCl 3/Cl 2 /Ar plasma etching of Al-rich AlGaN

DOE PAGES

Douglas, Erica A.; Sanchez, Carlos A.; Kaplar, Robert J.; ...

2016-12-01

Varying atomic ratios in compound semiconductors is well known to have large effects on the etching properties of the material. The use of thin device barrier layers, down to 25 nm, adds to the fabrication complexity by requiring precise control over etch rates and surface morphology. The effects of bias power and gas ratio of BCl 3 to Cl 2 for inductively coupled plasma etching of high Al content AlGaN were contrasted with AlN in this study for etch rate, selectivity, and surface morphology. Etch rates were greatly affected by both bias power and gas chemistry. Here we detail themore » effects of small variations in Al composition for AlGaN and show substantial changes in etch rate with regards to bias power as compared to AlN.« less

Gamma source for active interrogation

DOEpatents

Leung, Ka-Ngo; Lou, Tak Pui; Barletta, William A.

2012-10-02

A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.

Gamma source for active interrogation

DOEpatents

Leung, Ka-Ngo [Hercules, CA; Lou, Tak Pui [Berkeley, CA; Barletta, William A [Oakland, CA

2009-09-29

A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.

Observation of the standing wave effect in large-area, very-high-frequency capacitively coupled plasmas by using a fiber Bragg grating sensor

NASA Astrophysics Data System (ADS)

Han, Dao-Man; Liu, Yong-Xin; Gao, Fei; Wang, Xiang-Yu; Li, Ang; Xu, Jun; Jing, Zhen-Guo; Wang, You-Nian

2018-06-01

The large-area capacitive discharges driven at very high frequencies have been attracting much attention due to their wide applications in material etching and thin film deposition. However, in the regime, the standing wave effect (SWE) becomes a major limitation for plasma material processing uniformity. In this work, a fiber Bragg grating sensor was utilized for the observation of the SWE in a large-area capacitive discharge reactor by measuring the radial distribution of the neutral gas temperature T g. The influences of the RF power and the working pressure on the radial profiles of T g were studied. At a higher frequency (100 MHz) and a lower pressure (5 Pa), T g presents a center-peaked radial distribution, indicating a significant SWE. As the RF power increases, the central peak of T g becomes more evident due to the enhanced SWE. By contrast, at 100 MHz and a higher pressure (40 Pa), the radial distribution of T g shows an evident peak at the electrode edge and T g decays dramatically towards the discharge center because the electromagnetic waves are strongly damped as they are propagating from the edge to the center. At a lower frequency (27 MHz), only edge-high profiles of T g are observed for various pressures. For the sake of a comparison, a hairpin resonance probe was used to measure the radial distributions of the plasma density n p under the same condition. The radial profiles of T g are found to generally resemble those of n p under various conditions. Based on the experimental results, the neutral gas heating mechanism was analyzed.

Nanoelectronics and Plasma Processing---The Next 15 Years and Beyond

NASA Astrophysics Data System (ADS)

Lieberman, Michael A.

2006-10-01

The number of transistors per chip has doubled every 2 years since 1959, and this doubling will continue over the next 15 years as transistor sizes shrink. There has been a 25 million-fold decrease in cost for the same performance, and in 15 years a desktop computer will be hundreds of times more powerful than one today. Transistors now have 37 nm (120 atoms) gate lengths and 1.5 nm (5 atoms) gate oxide thicknesses. The smallest working transistor has a 5 nm (17 atoms) gate length, close to the limiting gate length, from simulations, of about 4 nm. Plasma discharges are used to fabricate hundreds of billions of these nano-size transistors on a silicon wafer. These discharges have evolved from a first generation of ``low density'' reactors capacitively driven by a single source, to a second generation of ``high density'' reactors (inductive and electron cyclotron resonance) having two rf power sources, in order to control independently the ion flux and ion bombarding energy to the substrate. A third generation of ``moderate density'' reactors, driven capacitively by one high and one low frequency rf source, is now widely used. Recently, triple frequency and combined dc/dual frequency discharges have been investigated, to further control processing characteristics, such as ion energy distributions, uniformity, and plasma etch selectivities. There are many interesting physics issues associated with these discharges, including stochastic heating of discharge electrons by dual frequency sheaths, nonlinear frequency interactions, powers supplied by the multi-frequency sources, and electromagnetic effects such as standing waves and skin effects. Beyond the 4 nm transistor limit lies a decade of further performance improvements for conventional nanoelectronics, and beyond that, a dimly-seen future of spintronics, single-electron transistors, cross-bar latches, and molecular electronics.

The radio-frequency fluctuation effect on the floating harmonic method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jaewon; Kim, Kyung-Hyun; Kim, Dong-Hwan

2016-08-15

The radio-frequency (RF) plasma diagnostics with an electrical probe facing a challenge, because the RF fluctuation oscillates the plasma potential and distorts the current-voltage (I-V) curve. As Langmuir probe is widely used in plasma diagnostics, many researchers have been studying the effect of RF fluctuation on probe and compensation methods. On the other hand, there have not been enough studies on the fluctuation effect on the floating harmonic method. Therefore, we investigated the impact of RF fluctuation on the floating harmonic method theoretically and experimentally. When the electrons are in ideal Maxwellian distribution, the floating potential is negatively shifted bymore » the RF fluctuation, but the fluctuation does not distort I-V curve around the floating potential. However, in practical plasmas, the I-V curve and their harmonic components are distorted. This RF fluctuation effect becomes more significant in a low density plasma with a high impedance sheath. The second harmonic current decreases with the RF fluctuation while the first harmonic current is merely affected. Therefore, the electron temperatures measured with the floating harmonic method under low density plasma with uncompensated probe are overestimated than the results obtained with the compensated probe.« less

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Environmentally benign semiconductor processing for dielectric etch

NASA Astrophysics Data System (ADS)

Liao, Marci Yi-Ting

Semiconductor processing requires intensive usage of chemicals, electricity, and water. Such intensive resource usage leaves a large impact on the environment. For instance, in Silicon Valley, the semiconductor industry is responsible for 80% of the hazardous waste sites contaminated enough to require government assistance. Research on environmentally benign semiconductor processing is needed to reduce the environmental impact of the semiconductor industry. The focus of this dissertation is on the environmental impact of one aspect of semiconductor processing: patterning of dielectric materials. Plasma etching of silicon dioxide emits perfluorocarbons (PFCs) gases, like C2F6 and CF4, into the atmosphere. These gases are super global warming/greenhouse gases because of their extremely long atmospheric lifetimes and excellent infrared absorption properties. We developed the first inductively coupled plasma (ICP) abatement device for destroying PFCs downstream of a plasma etcher. Destruction efficiencies of 99% and 94% can be obtained for the above mentioned PFCs, by using O 2 as an additive gas. Our results have lead to extensive modeling in academia as well as commercialization of the ICP abatement system. Dielectric patterning of hi-k materials for future device technology brings different environment challenges. The uncertainty of the hi-k material selection and the patterning method need to be addressed. We have evaluated the environmental impact of three different dielectric patterning methods (plasma etch, wet etch and chemical-mechanical polishing), as well as, the transistor device performances associated with the patterning methods. Plasma etching was found to be the most environmentally benign patterning method, which also gives the best device performance. However, the environmental concern for plasma etching is the possibility of cross-contamination from low volatility etch by-products. Therefore, mass transfer in a plasma etcher for a promising hi-k dielectric material, ZrO2, was studied. A novel cross-contamination sampling technique was developed, along with a mass transfer model.

Acid Etching and Plasma Sterilization Fail to Improve Osseointegration of Grit Blasted Titanium Implants

PubMed Central

Saksø, Mikkel; Jakobsen, Stig S; Saksø, Henrik; Baas, Jørgen; Jakobsen, Thomas; Søballe, Kjeld

2012-01-01

Interaction between implant surface and surrounding bone influences implant fixation. We attempted to improve the bone-implant interaction by 1) adding surface micro scale topography by acid etching, and 2) removing surface-adherent pro-inflammatory agents by plasma cleaning. Implant fixation was evaluated by implant osseointegration and biomechanical fixation. The study consisted of two paired animal sub-studies where 10 skeletally mature Labrador dogs were used. Grit blasted titanium alloy implants were inserted press fit in each proximal tibia. In the first study grit blasted implants were compared with acid etched grit blasted implants. In the second study grit blasted implants were compared with acid etched grit blasted implants that were further treated with plasma sterilization. Implant performance was evaluated by histomorphometrical investigation (tissue-to-implant contact, peri-implant tissue density) and mechanical push-out testing after four weeks observation time. Neither acid etching nor plasma sterilization of the grit blasted implants enhanced osseointegration or mechanical fixation in this press-fit canine implant model in a statistically significant manner. PMID:22962567

Particle-in-cell simulations of bounded plasma discharges applied to low pressure high density sources and positive columns

NASA Astrophysics Data System (ADS)

Kawamura, Emi

Particle-in-cell (PIC) simulations of bounded plasma discharges are attractive because the fields and the particle motion can be obtained self-consistently from first principles. Thus, we can accurately model a wide range of nonlocal and kinetic behavior. The only disadvantage is that PIC may be computationally expensive compared to other methods. Fluid codes, for example, may run faster but make assumptions about the bulk plasma velocity distributions and ignore kinetic effects. In Chapter 1, we demonstrate methods of accelerating PIC simulations of bounded plasma discharges. We find that a combination of physical and numerical methods makes run-times for PIC codes much more competitive with other types of codes. In processing plasmas, the ion energy distributions (IEDs) arriving at the wafer target are crucial in determining ion anisotropy and etch rates. The current trend for plasma reactors is towards lower gas pressure and higher plasma density. In Chapter 2, we review and analyze IEDs arriving at the target of low pressure high density rf plasma reactors. In these reactors, the sheath is typically collisionless. We then perform PIC simulations of collisionless rf sheaths and find that the key parameter governing the shape of the TED at the wafer is the ratio of the ion transit time across the sheath over the rf period. Positive columns are the source of illumination in fluorescent mercury-argon lamps. The efficiency of light production increases with decreasing gas pressure and decreasing discharge radius. Most current lamp software is based on the local concept even though low pressure lighting discharges tend to be nonlocal. In Chapter 3, we demonstrate a 1d3v radial PIC model to conduct nonlocal kinetic simulations of low pressure, small radius positive columns. When compared to other available codes, we find that our PIC code makes the least approximations and assumptions and is accurate and stable over a wider parameter range. We analyze the PIC simulation results in detail and find that the radial electron heat flow, which is neglected in local models, plays a major role in maintaining the global power balance. In Chapter 2, we focused on the sheaths of low pressure high density plasma reactors. In Chapter 4, we extend our study to the bulk and presheaths. Typical industrial plasma reactors often use gases with complex chemistries which tend to generate discharges containing negative ions. For high density electronegative plasmas with low gas pressure, we expect Coulomb collisions between positive and negative ions to dominate over collisions between ions and neutrals. We incorporate a Coulomb collision model into our PIC code to study the effect of this ion-ion Coulomb scattering. We find that the Coulomb collisions between the positive and negative ions significantly modify the negative ion flux, density and kinetic energy profiles.

RF Antenna Design for a Helicon Plasma Source

NASA Astrophysics Data System (ADS)

Godden, Katarina; Stassel, Brendan; Warta, Daniel; Yep, Isaac; Hicks, Nathaniel; Munk, Jens

2017-10-01

A helicon plasma source is under development for the new Plasma Science and Engineering Laboratory at the University of Alaska Anchorage. The helicon source is of a type comprising Pyrex and stainless steel cylindrical sections, joined to an ultrahigh vacuum chamber. A radio frequency (RF) helical antenna surrounds the Pyrex chamber, as well as DC solenoidal magnetic field coils. This presentation focuses on the design of the RF helical antenna and RF matching network, such that helicon wave power is coupled to argon plasma with minimal reflected power to the RF amplifier. The amplifier output is selectable between 2-30 MHz, with forward c.w. power up to 1.5 kW. Details and computer simulation of the antenna geometry, materials, and power matching will be presented, as well as the matching network of RF transmission line, tuning capacitors, and cooling system. An initial computational study of power coupling to the plasma will also be described. Supported by U.S. NSF/DOE Partnership in Basic Plasma Science and Engineering Grant PHY-1619615, by the Alaska Space Grant Program, and by UAA Innovate 2017.

Modeling of block copolymer dry etching for directed self-assembly lithography

NASA Astrophysics Data System (ADS)

Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

2018-03-01

Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

Mid-infrared integrated optics: versatile hot embossing of mid-infrared glasses for on-chip planar waveguides for molecular sensing

NASA Astrophysics Data System (ADS)

Seddon, Angela B.; Abdel-Moneim, Nabil S.; Zhang, Lian; Pan, Wei J.; Furniss, David; Mellor, Christopher J.; Kohoutek, Tomas; Orava, Jiri; Wagner, Tomas; Benson, Trevor M.

2014-07-01

The versatility of hot embossing for shaping photonic components on-chip for mid-infrared (IR) integrated optics, using a hard mold, is demonstrated. Hot embossing via fiber-on-glass (FOG), thermally evaporated films, and radio frequency (RF)-sputtered films on glass are described. Mixed approaches of combined plasma etching and hot embossing increase the versatility still further for engineering optical circuits on a single platform. Application of these methodologies for fabricating molecular-sensing devices on-chip is discussed with a view to biomedical sensing. Future prospects for using photonic integration for the new field of mid-IR molecular sensing are appraised. Also, common methods of measuring waveguide optical loss are critically compared, regarding their susceptibility to artifacts which tend artificially to depress, or enhance, the waveguide optical loss.

Plasma sweeper to control the coupling of RF power to a magnetically confined plasma

DOEpatents

Motley, Robert W.; Glanz, James

1985-01-01

A device for coupling RF power (a plasma sweeper) from a phased waveguide array for introducing RF power to a plasma having a magnetic field associated therewith comprises at least one electrode positioned near the plasma and near the phased waveguide array; and a potential source coupled to the electrode for generating a static electric field at the electrode directed into the plasma and having a component substantially perpendicular to the plasma magnetic field such that a non-zero vector cross-product of the electric and magnetic fields exerts a force on the plasma causing the plasma to drift.

Cryogenic Etching of Silicon: An Alternative Method For Fabrication of Vertical Microcantilever Master Molds

PubMed Central

Addae-Mensah, Kweku A.; Retterer, Scott; Opalenik, Susan R.; Thomas, Darrell; Lavrik, Nickolay V.; Wikswo, John P.

2013-01-01

This paper examines the use of deep reactive ion etching (DRIE) of silicon with fluorine high-density plasmas at cryogenic temperatures to produce silicon master molds for vertical microcantilever arrays used for controlling substrate stiffness for culturing living cells. The resultant profiles achieved depend on the rate of deposition and etching of a SiOxFy polymer, which serves as a passivation layer on the sidewalls of the etched structures in relation to areas that have not been passivated with the polymer. We look at how optimal tuning of two parameters, the O2 flow rate and the capacitively coupled plasma (CCP) power, determine the etch profile. All other pertinent parameters are kept constant. We examine the etch profiles produced using e-beam resist as the main etch mask, with holes having diameters of 750 nm, 1 µm, and 2 µm. PMID:24223478

A novel multi-actuation CMOS RF MEMS switch

NASA Astrophysics Data System (ADS)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Imamura, Masato; Asano, Atsuki; Ishikawa, Kenji; Takeda, Keigo; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2017-08-01

Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation of ultraviolet (UV) photons in Cl2 plasma emissions with wavelengths of 258 and 306 nm reduces the surface chemical reactions because of the photodissociation of both Ga and N chlorides, which leads to a suppression of the increase in surface roughness. Compared with Si-related materials, we point out that photon-induced reactions should be taken into account during the plasma processing of wide-bandgap semiconductors.

Online tuning of impedance matching circuit for long pulse inductively coupled plasma source operation—An alternate approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sudhir, Dass; Bandyopadhyay, M., E-mail: mainak@ter-india.org; Chakraborty, A.

2014-01-15

Impedance matching circuit between radio frequency (RF) generator and the plasma load, placed between them, determines the RF power transfer from RF generator to the plasma load. The impedance of plasma load depends on the plasma parameters through skin depth and plasma conductivity or resistivity. Therefore, for long pulse operation of inductively coupled plasmas, particularly for high power (∼100 kW or more) where plasma load condition may vary due to different reasons (e.g., pressure, power, and thermal), online tuning of impedance matching circuit is necessary through feedback. In fusion grade ion source operation, such online methodology through feedback is notmore » present but offline remote tuning by adjusting the matching circuit capacitors and tuning the driving frequency of the RF generator between the ion source operation pulses is envisaged. The present model is an approach for remote impedance tuning methodology for long pulse operation and corresponding online impedance matching algorithm based on RF coil antenna current measurement or coil antenna calorimetric measurement may be useful in this regard.« less

Production of stable, non-thermal atmospheric pressure rf capacitive plasmas using gases other than helium or neon

DOEpatents

Park, Jaeyoung; Henins, Ivars

2005-06-21

The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive .alpha.-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf .alpha.-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf .alpha.-mode plasmas for various materials processing applications.

Anisotropic etching of amorphous perfluoropolymer films in oxygen-based inductively coupled plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ono, Takao; Akagi, Takanori; Center for NanoBio Integration, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656

2009-01-01

An amorphous perfluoropolymer, 'Cytop' (Asahi Glass Co., Ltd.), is a preferable material for the fabrication of micro total analysis system devices because of its superior optical transparency over a wide wavelength range and low refractive index of 1.34, which is almost the same as that of water, as well as excellent chemical stability. To establish the precise microfabrication technology for this unique resin, the dry etching of the amorphous perfluoropolymer in Ar/O{sub 2} low-pressure inductively coupled plasma has been studied. A relatively high etch rate of approximately 6.3 {mu}m/min at maximum and highly anisotropic etched features was attained. Plasma measurementsmore » by a single Langmuir probe technique and actinometry revealed that etching is dominated by ion-assisted surface desorption above a 10%O{sub 2} mixing ratio, whereas the supply of active oxygen species is the rate-limiting process below 10%. Moreover, angled x-ray photoelectron spectroscopy measurements of an etched trench pattern revealed that a high anisotropy is attributed to the formation of a carbon-rich sidewall protection layer.« less

Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4F 8 and Ar/CHF 3 plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2015-11-11

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Capabilities of ICP-RIE cryogenic dry etching of silicon: review of exemplary microstructures

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Fündling, S.; Wehmann, H.-H.; Bandalo, V.; Bora, A.; Tornow, M.; Waag, A.; Peiner, E.

2009-10-01

Inductively coupled plasma (ICP) cryogenic dry etching was used to etch submicron pores, nano contact lines, submicron diameter pillars, thin and thick cantilevers, membrane structures and anisotropic deep structures with high aspect ratios in silicon for bio-nanoelectronics, optoelectronics and nano-micro electromechanical systems (NMEMS). The ICP cryogenic dry etching gives us the advantage of switching plasmas between etch rates of 13 nm min-1 and 4 µm min-1 for submicron pores and for membrane structures, respectively. A very thin photoresist mask can endure at -75 °C even during etching 70 µm deep for cantilevers and 300 µm deep for membrane structures. Coating the backsides of silicon membrane substrates with a thin photoresist film inhibited the lateral etching of cantilevers during their front release. Between -95 °C and -140 °C, we realized crystallographic-plane-dependent etching that creates facets only at the etch profile bottom. By varying the oxygen content and the process temperature, we achieved good control over the shape of the etched structures. The formation of black silicon during membrane etching down to 300 µm was delayed by reducing the oxygen content.

Trends in Dielectric Etch for Microelectronics Processing

NASA Astrophysics Data System (ADS)

Hudson, Eric A.

2003-10-01

Dielectric etch technology faces many challenges to meet the requirements for leading-edge microelectronics processing. The move to sub 100-nm device design rules increases the aspect ratios of certain features, imposes tighter restrictions on etched features' critical dimensions, and increases the density of closely packed arrays of features. Changes in photolithography are driving transitions to new photoresist materials and novel multilayer resist methods. The increasing use of copper metallization and low-k interlayer dielectric materials has introduced dual-damascene integration methods, with specialized dielectric etch applications. A common need is the selective removal of multiple layers which have very different compositions, while maintaining close control of the etched features' profiles. To increase productivity, there is a growing trend toward in-situ processing, which allows several films to be successively etched during a single pass through the process module. Dielectric etch systems mainly utilize capacitively coupled etch reactors, operating with medium-density plasmas and low gas residence time. Commercial technology development increasingly relies upon plasma diagnostics and modeling to reduce development cycle time and maximize performance.

Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films.

PubMed

Flynn, Shauna P; Bogan, Justin; Lundy, Ross; Khalafalla, Khalafalla E; Shaw, Matthew; Rodriguez, Brian J; Swift, Paul; Daniels, Stephen; O'Connor, Robert; Hughes, Greg; Kelleher, Susan M

2018-08-31

Self-assembling block copolymer (BCP) patterns are one of the main contenders for the fabrication of nanopattern templates in next generation lithography technology. Transforming these templates to hard mark materials is key for pattern transfer and in some cases, involves selectively removing one block from the nanopattern. For poly(styrene)-block-poly(4-vinylpyridine) (PS-b-P4VP), a high χ BCP system which could be potentially incorporated into semiconductor nanofabrication, this selective removal is predominantly done by a wet etch/activation process. Conversely, this process has numerous disadvantages including lack of control and high generation of waste leading to high cost. For these reasons, our motivation was to move away from the wet etch process and optimise a dry etch which would overcome the limitations associated with the activation process. The work presented herein shows the development of a selective plasma etch process for the removal of P4VP cores from PS-b-P4VP nanopatterned film. Results have shown that a nitrogen reactive ion etch plasma has a selectivity for P4VP of 2.2:1 and suggest that the position of the nitrogen in the aromatic ring of P4VP plays a key role in this selectivity. In situ plasma etching and x-ray photoelectron spectrometry measurements were made without breaking vacuum, confirming that the nitrogen plasma has selectivity for removal of P4VP over PS.

Investigation of rf power absorption in the plasma of helicon ion source.

PubMed

Mordyk, S; Alexenko, O; Miroshnichenko, V; Storizhko, V; Stepanov, K; Olshansky, V

2008-02-01

The simulations of the spatial distribution of rf power absorbed in a helicon ion source reveal a correlation between the depth of penetration of rf power into the plasma and the tilt angle of lines of force of the outer magnetic field. The deeper field penetration and greater power absorption were observed at large tilt angles of the field line to the plasma surface. The evaluations as to the possibility of excitation of helicon waves in compact rf ion sources were performed.

Initial Simulations of RF Waves in Hot Plasmas Using the FullWave Code

NASA Astrophysics Data System (ADS)

Zhao, Liangji; Svidzinski, Vladimir; Spencer, Andrew; Kim, Jin-Soo

2017-10-01

FullWave is a simulation tool that models RF fields in hot inhomogeneous magnetized plasmas. The wave equations with linearized hot plasma dielectric response are solved in configuration space on adaptive cloud of computational points. The nonlocal hot plasma dielectric response is formulated by calculating the plasma conductivity kernel based on the solution of the linearized Vlasov equation in inhomogeneous magnetic field. In an rf field, the hot plasma dielectric response is limited to the distance of a few particles' Larmor radii, near the magnetic field line passing through the test point. The localization of the hot plasma dielectric response results in a sparse matrix of the problem thus significantly reduces the size of the problem and makes the simulations faster. We will present the initial results of modeling of rf waves using the Fullwave code, including calculation of nonlocal conductivity kernel in 2D Tokamak geometry; the interpolation of conductivity kernel from test points to adaptive cloud of computational points; and the results of self-consistent simulations of 2D rf fields using calculated hot plasma conductivity kernel in a tokamak plasma with reduced parameters. Work supported by the US DOE ``SBIR program.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Langmuir probes for SPIDER (source for the production of ions of deuterium extracted from radio frequency plasma) experiment: Tests in BATMAN (Bavarian test machine for negative ions)

NASA Astrophysics Data System (ADS)

Brombin, M.; Spolaore, M.; Serianni, G.; Pomaro, N.; Taliercio, C.; Palma, M. Dalla; Pasqualotto, R.; Schiesko, L.

2014-11-01

A prototype system of the Langmuir probes for SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) was manufactured and experimentally qualified. The diagnostic was operated in RF (Radio Frequency) plasmas with cesium evaporation on the BATMAN (BAvarian Test MAchine for Negative ions) test facility, which can provide plasma conditions as expected in the SPIDER source. A RF passive compensation circuit was realised to operate the Langmuir probes in RF plasmas. The sensors' holder, designed to better simulate the bias plate conditions in SPIDER, was exposed to a severe experimental campaign in BATMAN with cesium evaporation. No detrimental effect on the diagnostic due to cesium evaporation was found during the exposure to the BATMAN plasma and in particular the insulation of the electrodes was preserved. The paper presents the system prototype, the RF compensation circuit, the acquisition system (as foreseen in SPIDER), and the results obtained during the experimental campaigns.

Langmuir probes for SPIDER (Source for the production of Ions of Deuterium Extracted from Radio Frequency plasma) experiment: tests in BATMAN (BAvarian Test Machine for Negative ions).

PubMed

Brombin, M; Spolaore, M; Serianni, G; Pomaro, N; Taliercio, C; Dalla Palma, M; Pasqualotto, R; Schiesko, L

2014-11-01

A prototype system of the Langmuir probes for SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) was manufactured and experimentally qualified. The diagnostic was operated in RF (Radio Frequency) plasmas with cesium evaporation on the BATMAN (BAvarian Test MAchine for Negative ions) test facility, which can provide plasma conditions as expected in the SPIDER source. A RF passive compensation circuit was realised to operate the Langmuir probes in RF plasmas. The sensors' holder, designed to better simulate the bias plate conditions in SPIDER, was exposed to a severe experimental campaign in BATMAN with cesium evaporation. No detrimental effect on the diagnostic due to cesium evaporation was found during the exposure to the BATMAN plasma and in particular the insulation of the electrodes was preserved. The paper presents the system prototype, the RF compensation circuit, the acquisition system (as foreseen in SPIDER), and the results obtained during the experimental campaigns.

Interaction force in a vertical dust chain inside a glass box.

PubMed

Kong, Jie; Qiao, Ke; Matthews, Lorin S; Hyde, Truell W

2014-07-01

Small number dust particle clusters can be used as probes for plasma diagnostics. The number of dust particles as well as cluster size and shape can be easily controlled employing a glass box placed within a Gaseous Electronics Conference (GEC) rf reference chamber to provide confinement of the dust. The plasma parameters inside this box and within the larger plasma chamber have not yet been adequately defined. Adjusting the rf power alters the plasma conditions causing structural changes of the cluster. This effect can be used to probe the relationship between the rf power and other plasma parameters. This experiment employs the sloshing and breathing modes of small cluster oscillations to examine the relationship between system rf power and the particle charge and plasma screening length inside the glass box. The experimental results provided indicate that both the screening length and dust charge decrease as rf power inside the box increases. The decrease in dust charge as power increases may indicate that ion trapping plays a significant role in the sheath.

RF-Plasma Source Commissioning in Indian Negative Ion Facility

NASA Astrophysics Data System (ADS)

Singh, M. J.; Bandyopadhyay, M.; Bansal, G.; Gahlaut, A.; Soni, J.; Kumar, Sunil; Pandya, K.; Parmar, K. G.; Sonara, J.; Yadava, Ratnakar; Chakraborty, A. K.; Kraus, W.; Heinemann, B.; Riedl, R.; Obermayer, S.; Martens, C.; Franzen, P.; Fantz, U.

2011-09-01

The Indian program of the RF based negative ion source has started off with the commissioning of ROBIN, the inductively coupled RF based negative ion source facility under establishment at Institute for Plasma research (IPR), India. The facility is being developed under a technology transfer agreement with IPP Garching. It consists of a single RF driver based beam source (BATMAN replica) coupled to a 100 kW, 1 MHz RF generator with a self excited oscillator, through a matching network, for plasma production and ion extraction and acceleration. The delivery of the RF generator and the RF plasma source without the accelerator, has enabled initiation of plasma production experiments. The recent experimental campaign has established the matching circuit parameters that result in plasma production with density in the range of 0.5-1×1018/m3, at operational gas pressures ranging between 0.4-1 Pa. Various configurations of the matching network have been experimented upon to obtain a stable operation of the set up for RF powers ranging between 25-85 kW and pulse lengths ranging between 4-20 s. It has been observed that the range of the parameters of the matching circuit, over which the frequency of the power supply is stable, is narrow and further experiments with increased number of turns in the coil are in the pipeline to see if the range can be widened. In this paper, the description of the experimental system and the commissioning data related to the optimisation of the various parameters of the matching network, to obtain stable plasma of required density, are presented and discussed.

Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

NASA Astrophysics Data System (ADS)

Ho, Teck Seng; Charles, Christine; Boswell, Rod

2018-05-01

In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma

NASA Astrophysics Data System (ADS)

Liu, Zecheng; Ishikawa, Kenji; Imamura, Masato; Tsutsumi, Takayoshi; Kondo, Hiroki; Oda, Osamu; Sekine, Makoto; Hori, Masaru

2018-06-01

Plasma-induced damage (PID) on GaN was optimally reduced by high-temperature chlorine plasma etching. Energetic ion bombardments primarily induced PID involving stoichiometry, surface roughness, and photoluminescence (PL) degradation. Chemical reactions under ultraviolet (UV) irradiation and chlorine radical exposure at temperatures higher than 400 °C can be controlled by taking into account the synergism of simultaneous photon and radical irradiations to effectively reduce PID.

High electronegativity multi-dipolar electron cyclotron resonance plasma source for etching by negative ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stamate, E.; Draghici, M.

2012-04-15

A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3 x 4 matrix configuration was built and optimized for silicon etching by negative ions. The density ratio of negative ions to electrons has exceeded 300 in Ar/SF{sub 6} gas mixture when a magnetic filter was used to reduce the electron temperature to about 1.2 eV. Mass spectrometry and electrostatic probe were used for plasma diagnostics. The new source is free of density jumps and instabilities and shows a very good stability for plasma potential, and the dominant negative ion species is F{sup -}. Themore » magnetic field in plasma volume is negligible and there is no contamination by filaments. The etching rate by negative ions measured in Ar/SF{sub 6}/O{sub 2} mixtures was almost similar with that by positive ions reaching 700 nm/min.« less

Surface chemistry of InP ridge structures etched in Cl{sub 2}-based plasma analyzed with angular XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bouchoule, Sophie, E-mail: sophie.bouchoule@lpn.cnrs.fr; Cambril, Edmond; Guilet, Stephane

2015-09-15

Two x-ray photoelectron spectroscopy configurations are proposed to analyze the surface chemistry of micron-scale InP ridge structures etched in chlorine-based inductively coupled plasma (ICP). Either a classical or a grazing configuration allows to retrieve information about the surface chemistry of the bottom surface and sidewalls of the etched features. The procedure is used to study the stoichiometry of the etched surface as a function of ridge aspect ratio for Cl{sub 2}/Ar and Cl{sub 2}/H{sub 2} plasma chemistries. The results show that the bottom surface and the etched sidewalls are P-rich, and indicate that the P-enrichment mechanism is rather chemically driven.more » Results also evidence that adding H{sub 2} to Cl{sub 2} does not necessarily leads to a more balanced surface stoichiometry. This is in contrast with recent experimental results obtained with the HBr ICP chemistry for which fairly stoichiometric surfaces have been obtained.« less

Plasma core reactor simulations using RF uranium seeded argon discharges

NASA Technical Reports Server (NTRS)

Roman, W. C.

1976-01-01

Experimental results are described in which pure uranium hexafluoride was injected into an argon-confined, steady-state, RF-heated plasma to investigate characteristics of plasma core nuclear reactors. The 80 kW (13.56 MHz) and 1.2 MW (5.51 MHz) rf induction heater facilities were used to determine a test chamber flow scheme which offered best uranium confinement with minimum wall coating. The cylindrical fused-silica test chamber walls were 5.7-cm-ID by 10-cm-long. Test conditions included RF powers of 2-85 kW, chamber pressures of 1-12 atm, and uranium hexafluoride mass-flow rates of 0.005-0.13 g/s. Successful techniques were developed for fluid-mechanical confinement of RF-heated plasmas with pure uranium hexafluoride injection.

Properties of radio-frequency heated argon confined uranium plasmas

NASA Technical Reports Server (NTRS)

1976-01-01

Pure uranium hexafluoride (UF6) was injected into an argon confined, steady state, rf-heated plasma within a fused silica peripheral wall test chamber. Exploratory tests conducted using an 80 kW rf facility and different test chamber flow configurations permitted selection of the configuration demonstrating the best confinement characteristics and minimum uranium compound wall coating. The overall test results demonstrated applicable flow schemes and associated diagnostic techniques were developed for the fluid mechanical confinement and characterization of uranium within an rf plasma discharge when pure UF6 is injected for long test times into an argon-confined, high-temperature, high-pressure, rf-heated plasma.

Effect of nonsinusoidal bias waveforms on ion energy distributions and fluorocarbon plasma etch selectivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agarwal, Ankur; Kushner, Mark J.; Iowa State University, Department of Electrical and Computer Engineering, 104 Marston Hall, Ames, Iowa 50011-2151

2005-09-15

The distributions of ion energies incident on the wafer significantly influence feature profiles and selectivity during plasma etching. Control of ion energies is typically obtained by varying the amplitude or frequency of a radio frequency sinusoidal bias voltage applied to the substrate. The resulting ion energy distribution (IED), though, is generally broad. Controlling the width and shape of the IED can potentially improve etch selectivity by distinguishing between threshold energies of surface processes. In this article, control of the IED was computationally investigated by applying a tailored, nonsinusoidal bias waveform to the substrate of an inductively coupled plasma. The waveformmore » we investigated, a quasi-dc negative bias having a short positive pulse each cycle, produced a narrow IED whose width was controllable based on the length of the positive spike and frequency. We found that the selectivity between etching Si and SiO{sub 2} in fluorocarbon plasmas could be controlled by adjusting the width and energy of the IED. Control of the energy of a narrow IED enables etching recipes that transition between speed and selectivity without change of gas mixture.« less

Sequential infiltration synthesis for enhancing multiple-patterning lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

Simplified methods of multiple-patterning photolithography using sequential infiltration synthesis to modify the photoresist such that it withstands plasma etching better than unmodified resist and replaces one or more hard masks and/or a freezing step in MPL processes including litho-etch-litho-etch photolithography or litho-freeze-litho-etch photolithography.

A Self Consistent RF Discharge, Plasma Chemistry and Surface Model for Plasma Enhanced Chemical Vapor Deposition

DTIC Science & Technology

1988-06-30

consists of three submodels for the electron kinetics, plasma chemistry , and surface deposition kinetics for a-Si:H deposited from radio frequency...properties. Plasma enhanced, Chemical vapor deposition, amorphous silicon, Modeling, Electron kinetics, Plasma chemistry , Deposition kinetics, Rf discharge, Silane, Film properties, Silicon.

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation.

PubMed

Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K Y; Chu, Paul K

2008-04-01

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

NASA Astrophysics Data System (ADS)

Hönl, Simon; Hahn, Herwig; Baumgartner, Yannick; Czornomaz, Lukas; Seidler, Paul

2018-05-01

We present an inductively coupled-plasma reactive-ion etching process that simultaneously provides both a high etch rate and unprecedented selectivity for gallium phosphide (GaP) in the presence of aluminum gallium phosphide (AlxGa1–xP). Utilizing mixtures of silicon tetrachloride (SiCl4) and sulfur hexafluoride (SF6), selectivities exceeding 2700:1 are achieved at GaP etch rates above 3000 nm min‑1. A design of experiments has been employed to investigate the influence of the inductively coupled-plasma power, the chamber pressure, the DC bias and the ratio of SiCl4 to SF6. The process enables the use of thin AlxGa1–xP stop layers even at aluminum contents of a few percent.

Sequential infiltration synthesis for advanced lithography

DOEpatents

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih; Peng, Qing

2015-03-17

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Atmospheric-pressure-plasma-enhanced fabrication of nonfouling nanocoatings for 316 stainless steel biomaterial interfaces

NASA Astrophysics Data System (ADS)

Huang, Chun; Lin, Jin-He; Li, Chi-Heng; Yu, I.-Chun; Chen, Ting-Lun

2018-03-01

Atmospheric-pressure plasma, which was generated with electrical RF power, was fed to a tetramethyldisiloxane/argon gas mixture to prepare bioinert organosilicon coatings for 316 stainless steel. The surface characteristics of atmospheric-pressure-plasma-deposited nanocoatings were evaluated as a function of RF plasma power, precursor gas flow, and plasma working distance. After surface deposition, the chemical features, elemental compositions, and surface morphologies of the organosilicon nanocoatings were examined. It was found that RF plasma power and plasma working distance are the essential factors that affect the formation of plasma-deposited nanocoatings. Fourier transform infrared spectroscopy spectra indicate that the atmospheric-pressure-plasma-deposited nanocoatings formed showed inorganic features. Atomic force microscopy analysis showed the surface roughness variation of the plasma-deposited nanocoating at different RF plasma powers and plasma working distances during surface treatment. From these surface analyses, it was found that the plasma-deposited organosilicon nanocoatings under specific operational conditions have relatively hydrophobic and inorganic characteristics, which are essential for producing an anti-biofouling interface on 316 stainless steel. The experimental results also show that atmospheric-pressure-plasma-deposited nanocoatings have potential use as a cell-resistant layer on 316 stainless steel.

Matching network for RF plasma source

DOEpatents

Pickard, Daniel S.; Leung, Ka-Ngo

2007-11-20

A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.

An analytical model for floating probes in AC plasma and its application to double probes for high density, high power RF discharges

NASA Astrophysics Data System (ADS)

Caneses, Juan Francisco; Blackwell, Boyd; Plasma Research Laboratory Team

2013-10-01

In this work we provide an analytical model that allows one to quantitatively assess the RF compensation performance and suitability of the double probe technique for use in RF generated plasma. The model is based in the theory of the self-bias effect as described in Braithwaite's work, which we extend to include the time resolved behavior of floating probes. We provide experimental verification for this model and show that the theory of transient RF self-bias probes and harmonic current detection probes are limiting cases of this extended model. Furthermore, the model shows that the RF compensation is solely dependent on the sheath impedance, the probe's stray capacitance to ground and RF frequency. In addition, we use these results to implement a double probe system for use in high density helicon plasma where heat loads could potentially damage the intricate components in an RF compensating circuit. Finally we use this model to (1) recommend ways to extend the operational regime of double probes where the plasma conditions would render them unsuitable and to (2) comment on the use of this model to aid design of RF compensated Langmuir probes.

Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

NASA Astrophysics Data System (ADS)

Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

2018-03-01

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

Coupled microwave ECR and radio-frequency plasma source for plasma processing

DOEpatents

Tsai, Chin-Chi; Haselton, Halsey H.

1994-01-01

In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Coupled microwave ECR and radio-frequency plasma source for plasma processing

DOEpatents

Tsai, C.C.; Haselton, H.H.

1994-03-08

In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm[sup 2] at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance. 4 figures.

Barium-strontium-titanate etching characteristics in chlorinated discharges

NASA Astrophysics Data System (ADS)

Stafford, Luc; Margot, Joëlle; Langlois, Olivier; Chaker, Mohamed

2003-07-01

The etching characteristics of barium-strontium-titanate (BST) were investigated using a high-density plasma sustained by surface waves at 190 MHz in Ar/Cl2 gas mixtures. The etch rate was examined as a function of both the total gas pressure and the Cl2 fraction in Ar/Cl2 using a wafer temperature of 10 °C. The results were correlated to positive ion density and plasma composition obtained from Langmuir probes and mass spectrometry. The BST etch rate was found to increase linearly with the positive ion density and to decrease with increasing chlorine atom concentration. This result indicates that for the temperature conditions used, the interaction between chlorine and BST yields compounds having a volatility that is lower than the original material. As a consequence, the contribution of neutral atomic Cl atoms to the etch mechanism is detrimental, thereby reducing the etch rate. As the wafer temperature increases, the role of chemistry in the etching process is enhanced.

Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Oshima, Yuichi; Ahmadi, Elaheh; Kaun, Stephen; Wu, Feng; Speck, James S.

2018-01-01

We investigated the homoepitaxial growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy. The growth rate of β-Ga2O3 increased with increasing Ga-flux, reaching a clear plateau of 56 nm h-1, and then decreased at higher Ga-flux. The growth rate decreased from 56 to 42 nm h-1 when the substrate temperature was increased from 750 °C to 800 °C. The growth rate was negative (net etching) when only Ga-flux was supplied. The etching rate proportionally increased with increasing the Ga-flux, reaching 84 nm h-1. The etching was enhanced at higher temperatures. It was found that Ga-etching of (001) β-Ga2O3 substrates prior to the homoepitaxial growth markedly improved the surface roughness of the film.

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

2012-09-15

The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (-108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate biasmore » reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl{sub x} (x = 1 - 4), many Si-oxychloride fragments with m/e = 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex 'recycling' process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl{sub 3} sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e = 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.« less

High temperature UF6 RF plasma experiments applicable to uranium plasma core reactors

NASA Technical Reports Server (NTRS)

Roman, W. C.

1979-01-01

An investigation was conducted using a 1.2 MW RF induction heater facility to aid in developing the technology necessary for designing a self critical fissioning uranium plasma core reactor. Pure, high temperature uranium hexafluoride (UF6) was injected into an argon fluid mechanically confined, steady state, RF heated plasma while employing different exhaust systems and diagnostic techniques to simulate and investigate some potential characteristics of uranium plasma core nuclear reactors. The development of techniques and equipment for fluid mechanical confinement of RF heated uranium plasmas with a high density of uranium vapor within the plasma, while simultaneously minimizing deposition of uranium and uranium compounds on the test chamber peripheral wall, endwall surfaces, and primary exhaust ducts, is discussed. The material tests and handling techniques suitable for use with high temperature, high pressure, gaseous UF6 are described and the development of complementary diagnostic instrumentation and measurement techniques to characterize the uranium plasma, effluent exhaust gases, and residue deposited on the test chamber and exhaust system components is reported.

Microtrenching-free two-step reactive ion etching of 4H-SiC using NF{sub 3}/HBr/O{sub 2} and Cl{sub 2}/O{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, Yuan-Hung, E-mail: yhtseng.ee99g@nctu.edu.tw; Tsui, Bing-Yue

2014-05-15

In this paper, the authors performed a reactive ion etch of a 4H-SiC substrate with a gas mixture of NF{sub 3}, HBr, and O{sub 2}, resulting in a microtrenching-free etch. The etch rate was 107.8 nm/min, and the selectivity over the oxide hard mask was ∼3.85. Cross-sectional scanning electron microscopy showed no microtrenching compared with etches using plasmas of NF{sub 3}, NF{sub 3}/HBr, and NF{sub 3}/O{sub 2}. Analyzing a variety of HBr/O{sub 2} mixing ratios, the authors discuss the additive effect of each gas and their respective potential mechanisms for alleviating microtrenching. To increase the radius of gyration of the bottommore » corners, they introduced a second etch step with Cl{sub 2}/O{sub 2} plasma. Fabricating simple metal-oxide-semiconductor capacitors on the two-step etched surface, the authors found that the electrical characteristics of the etched sample were nearly the same as the nonetched sample.« less

Variable frequency matching to a radiofrequency source immersed in vacuum

NASA Astrophysics Data System (ADS)

Charles, C.; Boswell, R. W.; Bish, A.

2013-09-01

A low-weight (0.12 kg) low-volume fixed ceramic capacitor impedance matching system is developed for frequency agile tuning of a radiofrequency (rf) Helicon plasma thruster. Three fixed groups of capacitors are directly mounted onto a two loop rf antenna with the thruster immersed in a vacuum chamber. Optimum plasma tuning at the resonance frequency is demonstrated via measurements of the load impedance, power transfer efficiency and plasma density versus driving frequency in the 12.882-14.238 MHz range. The resonance frequency with the plasma on is higher than the resonance frequency in vacuum. The minimum rf power necessary for ignition decreases when the ignition frequency is shifted downwards from the resonance frequency. This development has direct applications in space qualification and space use of rf plasma thrusters.

Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Huard, Chad M.; Lanham, Steven J.; Kushner, Mark J.

2018-04-01

Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the wafer scale uniformity of ALE should be independent of the uniformity of the reactant fluxes onto the wafers, provided all surface reactions are saturated. The passivation and etch steps should individually asymptotically saturate after a characteristic fluence of reactants has been delivered to each site. In this paper, results from a computational investigation are discussed regarding the uniformity of ALE of Si in Cl2 containing inductively coupled plasmas when the reactant fluxes are both non-uniform and non-ideal. In the parameter space investigated for inductively coupled plasmas, the local etch rate for continuous processing was proportional to the ion flux. When operated with saturated conditions (that is, both ALE steps are allowed to self-terminate), the ALE process is less sensitive to non-uniformities in the incoming ion flux than continuous etching. Operating ALE in a sub-saturation regime resulted in less uniform etching. It was also found that ALE processing with saturated steps requires a larger total ion fluence than continuous etching to achieve the same etch depth. This condition may result in increased resist erosion and/or damage to stopping layers using ALE. While these results demonstrate that ALE provides increased etch depth uniformity, they do not show an improved critical dimension uniformity in all cases. These possible limitations to ALE processing, as well as increased processing time, will be part of the process optimization that includes the benefits of atomic resolution and improved uniformity.

Simulation of RF power and multi-cusp magnetic field requirement for H- ion sources

NASA Astrophysics Data System (ADS)

Pathak, Manish; Senecha, V. K.; Kumar, Rajnish; Ghodke, Dharmraj. V.

2016-12-01

A computer simulation study for multi-cusp RF based H- ion source has been carried out using energy and particle balance equation for inductively coupled uniformly dense plasma considering sheath formation near the boundary wall of the plasma chamber for RF ion source used as high current injector for 1 Gev H- Linac project for SNS applications. The average reaction rates for different reactions responsible for H- ion production and destruction have been considered in the simulation model. The RF power requirement for the caesium free H- ion source for a maximum possible H- ion beam current has been derived by evaluating the required current and RF voltage fed to the coil antenna using transformer model for Inductively Coupled Plasma (ICP). Different parameters of RF based H- ion source like excited hydrogen molecular density, H- ion density, RF voltage and current of RF antenna have been calculated through simulations in the presence and absence of multicusp magnetic field to distinctly observe the effect of multicusp field. The RF power evaluated for different H- ion current values have been compared with the experimental reported results showing reasonably good agreement considering the fact that some RF power will be reflected from the plasma medium. The results obtained have helped in understanding the optimum field strength and field free regions suitable for volume emission based H- ion sources. The compact RF ion source exhibits nearly 6 times better efficiency compare to large diameter ion source.

Gas and plasma dynamics of RF discharge jet of low pressure in a vacuum chamber with flat electrodes and inside tube, influence of RF discharge on the steel surface parameters

NASA Astrophysics Data System (ADS)

Khristoliubova, V. I.; Kashapov, N. F.; Shaekhov, M. F.

2016-06-01

Researches results of the characteristics of the RF discharge jet of low pressure and the discharge influence on the surface modification of high speed and structural steels are introduced in the article. Gas dynamics, power and energy parameters of the RF low pressure discharge flow in the discharge chamber and the electrode gap are studied in the presence of the materials. Plasma flow rate, discharge power, the concentration of electrons, the density of RF power, the ion current density, and the energy of the ions bombarding the surface materials are considered for the definition of basic properties crucial for the process of surface modification of materials as they were put in the plasma jet. The influence of the workpiece and effect of products complex configuration on the RF discharge jet of low pressure is defined. The correlation of the input parameters of the plasma unit on the characteristics of the discharge is established.

RF sheaths for arbitrary B field angles

NASA Astrophysics Data System (ADS)

D'Ippolito, Daniel; Myra, James

2014-10-01

RF sheaths occur in tokamaks when ICRF waves encounter conducting boundaries and accelerate electrons out of the plasma. Sheath effects reduce the efficiency of ICRF heating, cause RF-specific impurity influxes from the edge plasma, and increase the plasma-facing component damage. The rf sheath potential is sensitive to the angle between the B field and the wall, the ion mobility and the ion magnetization. Here, we obtain a numerical solution of the non-neutral rf sheath and magnetic pre-sheath equations (for arbitrary values of these parameters) and attempt to infer the parametric dependences of the Child-Langmuir law. This extends previous work on the magnetized, immobile ion regime. An important question is how the rf sheath voltage distributes itself between sheath and pre-sheath for various B field angles. This will show how generally previous estimates of the rf sheath voltage and capacitance were reasonable, and to improve the RF sheath BC. Work supported by US DOE grants DE-FC02-05ER54823 and DE-FG02-97ER54392.

Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen

NASA Technical Reports Server (NTRS)

Avni, R.; Carmi, U.; Grill, A.; Manory, R.; Grossman, E.

1984-01-01

The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl.

Langmuir probes for SPIDER (source for the production of ions of deuterium extracted from radio frequency plasma) experiment: Tests in BATMAN (Bavarian test machine for negative ions)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brombin, M., E-mail: matteo.brombin@igi.cnr.it; Spolaore, M.; Serianni, G.

2014-11-15

A prototype system of the Langmuir probes for SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) was manufactured and experimentally qualified. The diagnostic was operated in RF (Radio Frequency) plasmas with cesium evaporation on the BATMAN (BAvarian Test MAchine for Negative ions) test facility, which can provide plasma conditions as expected in the SPIDER source. A RF passive compensation circuit was realised to operate the Langmuir probes in RF plasmas. The sensors’ holder, designed to better simulate the bias plate conditions in SPIDER, was exposed to a severe experimental campaign in BATMAN with cesium evaporation.more » No detrimental effect on the diagnostic due to cesium evaporation was found during the exposure to the BATMAN plasma and in particular the insulation of the electrodes was preserved. The paper presents the system prototype, the RF compensation circuit, the acquisition system (as foreseen in SPIDER), and the results obtained during the experimental campaigns.« less

Simulation of beam-induced plasma in gas-filled rf cavities

DOE PAGES

Yu, Kwangmin; Samulyak, Roman; Yonehara, Katsuya; ...

2017-03-07

Processes occurring in a radio-frequency (rf) cavity, filled with high pressure gas and interacting with proton beams, have been studied via advanced numerical simulations. Simulations support the experimental program on the hydrogen gas-filled rf cavity in the Mucool Test Area (MTA) at Fermilab, and broader research on the design of muon cooling devices. space, a 3D electromagnetic particle-in-cell (EM-PIC) code with atomic physics support, was used in simulation studies. Plasma dynamics in the rf cavity, including the process of neutral gas ionization by proton beams, plasma loading of the rf cavity, and atomic processes in plasma such as electron-ion andmore » ion-ion recombination and electron attachment to dopant molecules, have been studied. Here, through comparison with experiments in the MTA, simulations quantified several uncertain values of plasma properties such as effective recombination rates and the attachment time of electrons to dopant molecules. Simulations have achieved very good agreement with experiments on plasma loading and related processes. Lastly, the experimentally validated code space is capable of predictive simulations of muon cooling devices.« less

Influence of gold nanoparticles on the 805 nm gain in Tm3+/Yb3+ codoped PbO-GeO2 pedestal waveguides

NASA Astrophysics Data System (ADS)

de Assumpção, T. A. A.; Camilo, M. E.; Alayo, M. I.; da Silva, D. M.; Kassab, L. R. P.

2017-10-01

The production and characterization of pedestal waveguides based on PbO-GeO2 amorphous thin films codoped with Tm3+/Yb3+, with and without gold nanoparticles (NPs), are reported. Pedestal structure was obtained by conventional photolithography and plasma etching. Tm3+/Yb3+ codoped PGO amorphous thin film was obtained by RF Magnetron Sputtering deposition and used as core layer in the pedestal optical waveguide. The minimum propagation losses in the waveguide were 3.6 dB/cm at 1068 nm. The internal gain at 805 nm was enhanced and increased to 8.67 dB due to the presence of gold NPs. These results demonstrate for the first time that Tm3+/Yb3+ codoped PbO-GeO2 waveguides are promising for first telecom window and integrated photonics, especially for applications on fiber network at short distances.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

NASA Astrophysics Data System (ADS)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; Bruce, Robert L.; Joseph, Eric A.; Oehrlein, Gottlieb S.

2017-02-01

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C4F8 and CHF3) and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J. Vac. Sci. Technol., A 32, 020603 (2014) and D. Metzler et al., J. Vac. Sci. Technol., A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO2 and Si but is limited with regard to control over material etching selectivity. Ion energy over the 20-30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF3 has a lower FC deposition yield for both SiO2 and Si and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F8. The thickness of deposited FC layers using CHF3 is found to be greater for Si than for SiO2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

NASA Astrophysics Data System (ADS)

Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

2018-05-01

Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Erosion behavior of CVD 3C silicon carbide in inductively coupled plasmas

NASA Astrophysics Data System (ADS)

Brooks, Mitchell R.

2010-11-01

An electrostatic, capacitively coupled Planar Ion Flux (PIF) probe has been developed as a sensor for use in high volume reactive ion etch (RIE) chambers. An important factor in the design is the material used for the probe collection area that is exposed to the plasma. For use in inductively coupled plasma chambers, bulk-deposited, 3C silicon carbide (SiC) was chosen. The primary objective of this work was to characterize the erosion behavior of the probe tip throughout repeated cycling for 100 RF hours (RFH). Surface morphology, roughness, and composition were documented at the beginning and end of cycling. In addition, the mass of the probe tip was documented three times throughout the experiment. This was used to calculate the wear rate which averaged ~100 mug/RFH. Although physical and chemical mechanisms were evident, it appears that preferential sputtering at pre-existing surface defects had the greatest influence on the erosion behavior. Additionally, an investigation into the sudden abnormal electrical behavior of the probe yielded the conclusion that the added capacitance of a deposited film reduces the number of data points in the ion saturation region used to fit the experimental data. This results in excessive values for extracted plasma parameters, most notably the electron temperature. However, this is only a temporary condition if the film can be removed.

Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

NASA Astrophysics Data System (ADS)

Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

2000-07-01

In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Economou, Demetre J.

As microelectronic device features continue to shrink approaching atomic dimensions, control of the ion energy distribution on the substrate during plasma etching and deposition becomes increasingly critical. The ion energy should be high enough to drive ion-assisted etching, but not too high to cause substrate damage or loss of selectivity. In many cases, a nearly monoenergetic ion energy distribution (IED) is desired to achieve highly selective etching. In this work, the author briefly reviews: (1) the fundamentals of development of the ion energy distribution in the sheath and (2) methods to control the IED on plasma electrodes. Such methods includemore » the application of “tailored” voltage waveforms on an electrode in continuous wave plasmas, or the application of synchronous bias on a “boundary electrode” during a specified time window in the afterglow of pulsed plasmas.« less

JET (3He)-D scenarios relying on RF heating: survey of selected recent experiments

NASA Astrophysics Data System (ADS)

Van Eester, D.; Lerche, E.; Andrew, Y.; Biewer, T. M.; Casati, A.; Crombé, K.; de la Luna, E.; Ericsson, G.; Felton, R.; Giacomelli, L.; Giroud, C.; Hawkes, N.; Hellesen, C.; Hjalmarsson, A.; Joffrin, E.; Källne, J.; Kiptily, V.; Lomas, P.; Mantica, P.; Marinoni, A.; Mayoral, M.-L.; Ongena, J.; Puiatti, M.-E.; Santala, M.; Sharapov, S.; Valisa, M.; JET EFDA contributors

2009-04-01

Recent JET experiments have been devoted to the study of (3He)-D plasmas involving radio frequency (RF) heating. This paper starts by discussing the RF heating efficiency theoretically expected in such plasmas, covering both relevant aspects of wave and of particle dynamics. Then it gives a concise summary of the main conclusions drawn from recent experiments that were either focusing on studying RF heating physics aspects or that were adopting RF heating as a tool to study plasma behavior. Depending on the minority concentration chosen, different physical phenomena are observed. At very low concentration (X[3He] < 1%), energetic tails are formed which trigger MHD activity and result in loss of fast particles. Alfvén cascades were observed and gamma ray tomography indirectly shows the impact of sawtooth crashes on the fast particle orbits. Low concentration (X[3He] < 10%) favors minority heating while for X[3He] Gt 10% electron mode conversion damping becomes dominant. Evidence for the Fuchs et al standing wave effect (Fuchs et al 1995 Phys. Plasmas 2 1637-47) on the absorption is presented. RF induced deuterium tails were observed in mode conversion experiments with large X[3He] (≈18%). As tentative modeling shows, the formation of these tails can be explained as a consequence of wave power absorption by neutral beam particles that efficiently interact with the waves well away from the cold D cyclotron resonance position as a result of their substantial Doppler shift. As both ion and electron RF power deposition profiles in (3He)-D plasmas are fairly narrow—giving rise to localized heat sources—the RF heating method is an ideal tool for performing transport studies. Various of the experiments discussed here were done in plasmas with internal transport barriers (ITBs). ITBs are identified as regions with locally reduced diffusivity, where poloidal spinning up of the plasma is observed. The present know-how on the role of RF heating for impurity transport is also briefly summarized.

Influence of the RF electrode cleanliness on plasma characteristics and dust-particle generation in methane dusty plasmas

NASA Astrophysics Data System (ADS)

Géraud-Grenier, I.; Desdions, W.; Faubert, F.; Mikikian, M.; Massereau-Guilbaud, V.

2018-01-01

The methane decomposition in a planar RF discharge (13.56 MHz) leads both to a dust-particle generation in the plasma bulk and to a coating growth on the electrodes. Growing dust-particles fall onto the grounded electrode when they are too heavy. Thus, at the end of the experiment, the grounded electrode is covered by a coating and by fallen dust-particles. During the dust-particle growth, the negative DC self-bias voltage (VDC) increases because fewer electrons reach the RF electrode, leading to a more resistive plasma and to changes in the plasma chemical composition. In this paper, the cleanliness influence of the RF electrode on the dust-particle growth, on the plasma characteristics and composition is investigated. A cleanliness electrode is an electrode without coating and dust-particles on its surface at the beginning of the experiment.

A study on the antimicrobial efficacy of RF oxygen plasma and neem extract treated cotton fabrics

NASA Astrophysics Data System (ADS)

Vaideki, K.; Jayakumar, S.; Thilagavathi, G.; Rajendran, R.

2007-06-01

The paper deals with a thorough investigation on the antimicrobial activity of RF oxygen plasma and Azadirachtin (neem extract) treated cotton fabric. The hydrophilicity of cotton fabric was found to improve when treated with RF oxygen plasma. The process parameters such as electrode gap, time of exposure and oxygen pressure have been varied to study their effect on improving the hydrophilicity of the cotton fabric. The static immersion test has been carried out to assess the hydrophilicity of the oxygen plasma treated samples and the process parameters were optimized based on these test results. The formation of carbonyl group during surface modification in the plasma treated sample was analysed using FTIR studies. The surface morphology has been studied using SEM micrographs. The antimicrobial activity was imparted to the RF oxygen plasma treated samples using methanolic extract of neem leaves containing Azadirachtin. The antimicrobial activity of these samples has been analysed and compared with the activity of the cotton fabric treated with neem extract alone. The investigation reveals that the surface modification due to RF oxygen plasma was found to increase the hydrophilicity and hence the antimicrobial activity of the cotton fabric when treated with Azadirachtin.

A Tightly Coupled Non-Equilibrium Magneto-Hydrodynamic Model for Inductively Coupled RF Plasmas

DTIC Science & Technology

2016-02-29

development a tightly coupled magneto-hydrodynamic model for Inductively Coupled Radio- Frequency (RF) Plasmas. Non Local Thermodynamic Equilibrium (NLTE...for Inductively Coupled Radio-Frequency (RF) Plasmas. Non Local Thermodynamic Equilibrium (NLTE) effects are described based on a hybrid State-to-State... thermodynamic variable. This choice allows one to hide the non-linearity of the gas (total) thermal conductivity κ and can partially alle- 2 viate numerical

Investigation on the effect of RF air plasma and neem leaf extract treatment on the surface modification and antimicrobial activity of cotton fabric

NASA Astrophysics Data System (ADS)

Vaideki, K.; Jayakumar, S.; Rajendran, R.; Thilagavathi, G.

2008-02-01

A thorough investigation on the antimicrobial activity of RF air plasma and azadirachtin (neem leaf extract) treated cotton fabric has been dealt with in this paper. The cotton fabric was given a RF air plasma treatment to improve its hydrophilicity. The process parameters such as electrode gap, time of exposure and RF power have been varied to study their effect in improving the hydrophilicity of the cotton fabric and they were optimized based on the static immersion test results. The neem leaf extract (azadirachtin) was applied on fabric samples to impart antimicrobial activity. The antimicrobial efficacy of the samples have been analysed and compared with the efficacy of the cotton fabric treated with the antimicrobial finish alone. The investigation reveals that the RF air plasma has modified the surface of the fabric, which in turn increased the antimicrobial activity of the fabric when treated with azadirachtin. The surface modification due to RF air plasma treatment has been analysed by comparing the FTIR spectra of the untreated and plasma treated samples. The molecular interaction between the fabric, azadirachtin and citric acid which was used as a cross linking agent to increase the durability of the antimicrobial finish has also been analysed using FTIR spectra.

Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

NASA Astrophysics Data System (ADS)

Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

2010-09-01

Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

Cylindrical neutron generator

DOEpatents

Leung, Ka-Ngo [Hercules, CA

2008-04-22

A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

Cylindrical neutron generator

DOEpatents

Leung, Ka-Ngo

2005-06-14

A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

Cylindrical neutron generator

DOEpatents

Leung, Ka-Ngo [Hercules, CA

2009-12-29

A cylindrical neutron generator is formed with a coaxial RF-driven plasma ion source and target. A deuterium (or deuterium and tritium) plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical neutron generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which contain many slots. The plasma generator emanates ions radially over 360.degree. and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired. The plasma generator may be in the center and the neutron target on the outside, or the plasma generator may be on the outside and the target on the inside. In a nested configuration, several concentric targets and plasma generating regions are nested to increase the neutron flux.

Effect of surface etching on the oxidation behavior of plasma chromizing-treated AISI440B stainless steel

NASA Astrophysics Data System (ADS)

Meng, T. X.; Guo, Q.; Xi, W.; Ding, W. Q.; Liu, X. Z.; Lin, N. M.; Yu, S. W.; Liu, X. P.

2018-03-01

Double glow plasma surface alloying was applied to prepare chromizing layer in the surface of AISI440B stainless steel. Prior to chromizing, the stainless steel was etched by microwave plasma chemical vapor deposition to change the surface morphology and composition, and then heated for chromizing at 950 °C for 3 h. The cyclical oxidation of steel after chromizing was carried out at 900 °C for 100 h. Scanning electron microscopy, glow discharge optical emission spectrometer and X-ray diffractometer were used to characterize microstructure, composition and phase structure of alloyed and oxidized samples. The results show that the surface was composed of the Cr-rich top layer and Cr23C6, Cr7C3 and {Cr,Fe}7C3 below layer after chromizing. The bonding between the chromizing layer and the substrate after etching treatment was obviously strengthened. AISI440B steel shows a poor oxidation resistance and the weight gain oxidized for 100 h was up to 31.1 mg/cm2. Weight gains for chromizing and etching + chromizing treated samples were 0.67 mg/cm2 and 8 mg/cm2, respectively. Both oxidized surfaces of chromizing and etching + chromizing were composed of Cr2O3, but the oxide scale of etching + chromizing treated samples was more compact than that of samples without etching.

Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Goverdhanam, Kavita; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

2001-01-01

In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).

Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ranjan, Alok, E-mail: alok.ranjan@us.tel.com; Wang, Mingmei; Sherpa, Sonam D.

2016-05-15

Atomic or layer by layer etching of silicon exploits temporally segregated self-limiting adsorption and material removal steps to mitigate the problems associated with continuous or quasicontinuous (pulsed) plasma processes: selectivity loss, damage, and profile control. Successful implementation of atomic layer etching requires careful choice of the plasma parameters for adsorption and desorption steps. This paper illustrates how process parameters can be arrived at through basic scaling exercises, modeling and simulation, and fundamental experimental tests of their predictions. Using chlorine and argon plasma in a radial line slot antenna plasma source as a platform, the authors illustrate how cycle time, ionmore » energy, and radical to ion ratio can be manipulated to manage the deviation from ideality when cycle times are shortened or purges are incomplete. Cell based Monte Carlo feature scale modeling is used to illustrate profile outcomes. Experimental results of atomic layer etching processes are illustrated on silicon line and space structures such that iso-dense bias and aspect ratio dependent free profiles are produced. Experimental results also illustrate the profile control margin as processes move from atomic layer to multilayer by layer etching. The consequence of not controlling contamination (e.g., oxygen) is shown to result in deposition and roughness generation.« less

Plasma core reactor simulations using RF uranium seeded argon discharges

NASA Technical Reports Server (NTRS)

Roman, W. C.

1975-01-01

An experimental investigation was conducted using the United Technologies Research Center (UTRC) 80 kW and 1.2 MW RF induction heater systems to aid in developing the technology necessary for designing a self-critical fissioning uranium plasma core reactor (PCR). A nonfissioning, steady-state RF-heated argon plasma seeded with pure uranium hexafluoride (UF6) was used. An overall objective was to achieve maximum confinement of uranium vapor within the plasma while simultaneously minimizing the uranium compound wall deposition. Exploratory tests were conducted using the 80 kW RF induction heater with the test chamber at approximately atmospheric pressure and discharge power levels on the order of 10 kW. Four different test chamber flow configurations were tested to permit selection of the configuration offering the best confinement characteristics for subsequent tests at higher pressure and power in the 1.2 MW RF induction heater facility.

Atomic-layer soft plasma etching of MoS2

PubMed Central

Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

2016-01-01

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

2002-01-01

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Evaluation of power transfer efficiency for a high power inductively coupled radio-frequency hydrogen ion source

NASA Astrophysics Data System (ADS)

Jain, P.; Recchia, M.; Cavenago, M.; Fantz, U.; Gaio, E.; Kraus, W.; Maistrello, A.; Veltri, P.

2018-04-01

Neutral beam injection (NBI) for plasma heating and current drive is necessary for International Thermonuclear Experimental reactor (ITER) tokamak. Due to its various advantages, a radio frequency (RF) driven plasma source type was selected as a reference ion source for the ITER heating NBI. The ITER relevant RF negative ion sources are inductively coupled (IC) devices whose operational working frequency has been chosen to be 1 MHz and are characterized by high RF power density (˜9.4 W cm-3) and low operational pressure (around 0.3 Pa). The RF field is produced by a coil in a cylindrical chamber leading to a plasma generation followed by its expansion inside the chamber. This paper recalls different concepts based on which a methodology is developed to evaluate the efficiency of the RF power transfer to hydrogen plasma. This efficiency is then analyzed as a function of the working frequency and in dependence of other operating source and plasma parameters. The study is applied to a high power IC RF hydrogen ion source which is similar to one simplified driver of the ELISE source (half the size of the ITER NBI source).

Sheath and bulk expansion induced by RF bias in atmospheric pressure microwave plasma

NASA Astrophysics Data System (ADS)

Lee, Jimo; Nam, Woojin; Lee, Jae Koo; Yun, Gunsu

2017-10-01

A large axial volume expansion of microwave-driven plasma at atmospheric pressure is achieved by applying a low power radio frequency (RF) bias at an axial location well isolated from the original plasma bulk. The evolution of the plasma plume visualized by high speed ICCD imaging suggest that the free electrons drifting toward the bias electrode cause the prodigious expansion of the sheath, creating a stable plasma stream channel between the microwave and the RF electrodes. For argon plasma in ambient air, enhanced emissions of OH and N2 spectral lines are measured in the extended plume region, supporting the acceleration of electrons and subsequent generation of radical species. The coupling of RF bias with microwave provides an efficient way of enlarging the plasma volume and enhancing the production of radicals. Work supported by the National Research Foundation of Korea under BK21+ program and Grant No. 2015R1D1A1A01061556 (Ministry of Education).

Sequential infiltration synthesis for advanced lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darling, Seth B.; Elam, Jeffrey W.; Tseng, Yu-Chih

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned usingmore » photolithography, electron-beam lithography or a block copolymer self-assembly process.« less

Prediction of plasma-induced damage distribution during silicon nitride etching using advanced three-dimensional voxel model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuboi, Nobuyuki, E-mail: Nobuyuki.Kuboi@jp.sony.com; Tatsumi, Tetsuya; Kinoshita, Takashi

2015-11-15

The authors modeled SiN film etching with hydrofluorocarbon (CH{sub x}F{sub y}/Ar/O{sub 2}) plasma considering physical (ion bombardment) and chemical reactions in detail, including the reactivity of radicals (C, F, O, N, and H), the area ratio of Si dangling bonds, the outflux of N and H, the dependence of the H/N ratio on the polymer layer, and generation of by-products (HCN, C{sub 2}N{sub 2}, NH, HF, OH, and CH, in addition to CO, CF{sub 2}, SiF{sub 2}, and SiF{sub 4}) as ion assistance process parameters for the first time. The model was consistent with the measured C-F polymer layer thickness,more » etch rate, and selectivity dependence on process variation for SiN, SiO{sub 2}, and Si film etching. To analyze the three-dimensional (3D) damage distribution affected by the etched profile, the authors developed an advanced 3D voxel model that can predict the time-evolution of the etched profile and damage distribution. The model includes some new concepts for gas transportation in the pattern using a fluid model and the property of voxels called “smart voxels,” which contain details of the history of the etching situation. Using this 3D model, the authors demonstrated metal–oxide–semiconductor field-effect transistor SiN side-wall etching that consisted of the main-etch step with CF{sub 4}/Ar/O{sub 2} plasma and an over-etch step with CH{sub 3}F/Ar/O{sub 2} plasma under the assumption of a realistic process and pattern size. A large amount of Si damage induced by irradiated hydrogen occurred in the source/drain region, a Si recess depth of 5 nm was generated, and the dislocated Si was distributed in a 10 nm deeper region than the Si recess, which was consistent with experimental data for a capacitively coupled plasma. An especially large amount of Si damage was also found at the bottom edge region of the metal–oxide–semiconductor field-effect transistors. Furthermore, our simulation results for bulk fin-type field-effect transistor side-wall etching showed that the Si fin (source/drain region) was directly damaged by high energy hydrogen and had local variations in the damage distribution, which may lead to a shift in the threshold voltage and the off-state leakage current. Therefore, side-wall etching and ion implantation processes must be carefully designed by considering the Si damage distribution to achieve low damage and high transistor performance for complementary metal–oxide–semiconductor devices.« less

TOPICAL REVIEW: Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

NASA Astrophysics Data System (ADS)

Jansen, H V; de Boer, M J; Unnikrishnan, S; Louwerse, M C; Elwenspoek, M C

2009-03-01

An intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity (in order of priority) using state-of-the-art dual power source DRIE equipment. The research compares pulsed-mode DRIE processes (e.g. Bosch technique) and mixed-mode DRIE processes (e.g. cryostat technique). In both techniques, an inhibitor is added to fluorine-based plasma to achieve directional etching, which is formed out of an oxide-forming (O2) or a fluorocarbon (FC) gas (C4F8 or CHF3). The inhibitor can be introduced together with the etch gas, which is named a mixed-mode DRIE process, or the inhibitor can be added in a time-multiplexed manner, which will be termed a pulsed-mode DRIE process. Next, the most convenient mode of operation found in this study is highlighted including some remarks to ensure proper etching (i.e. step synchronization in pulsed-mode operation and heat control of the wafer). First of all, for the fabrication of directional profiles, pulsed-mode DRIE is far easier to handle, is more robust with respect to the pattern layout and has the potential of achieving much higher mask etch selectivity, whereas in a mixed-mode the etch rate is higher and sidewall scalloping is prohibited. It is found that both pulsed-mode CHF3 and C4F8 are perfectly suited to perform high speed directional etching, although they have the drawback of leaving the FC residue at the sidewalls of etched structures. They show an identical result when the flow of CHF3 is roughly 30 times the flow of C4F8, and the amount of gas needed for a comparable result decreases rapidly while lowering the temperature from room down to cryogenic (and increasing the etch rate). Moreover, lowering the temperature lowers the mask erosion rate substantially (and so the mask selectivity improves). The pulsed-mode O2 is FC-free but shows only tolerable anisotropic results at -120 °C. The downside of needing liquid nitrogen to perform cryogenic etching can be improved by using a new approach in which both the pulsed and mixed modes are combined into the so-called puffed mode. Alternatively, the use of tetra-ethyl-ortho-silicate (TEOS) as a silicon oxide precursor is proposed to enable sufficient inhibiting strength and improved profile control up to room temperature. Pulsed-mode processing, the second important aspect, is commonly performed in a cycle using two separate steps: etch and deposition. Sometimes, a three-step cycle is adopted using a separate step to clean the bottom of etching features. This study highlights an issue, known by the authors but not discussed before in the literature: the need for proper synchronization between gas and bias pulses to explore the benefit of three steps. The transport of gas from the mass flow controller towards the wafer takes time, whereas the application of bias to the wafer is relatively instantaneous. This delay causes a problem with respect to synchronization when decreasing the step time towards a value close to the gas residence time. It is proposed to upgrade the software with a delay time module for the bias pulses to be in pace with the gas pulses. If properly designed, the delay module makes it possible to switch on the bias exactly during the arrival of the gas for the bottom removal step and so it will minimize the ionic impact because now etch and deposition steps can be performed virtually without bias. This will increase the mask etch selectivity and lower the heat impact significantly. Moreover, the extra bottom removal step can be performed at (also synchronized!) low pressure and therefore opens a window for improved aspect ratios. The temperature control of the wafer, a third aspect of this study, at a higher etch rate and longer etch time, needs critical attention, because it drastically limits the DRIE performance. It is stressed that the exothermic reaction (high silicon loading) and ionic impact (due to metallic masks and/or exposed silicon) are the main sources of heat that might raise the wafer temperature uncontrollably, and they show the weakness of the helium backside technique using mechanical clamping. Electrostatic clamping, an alternative technique, should minimize this problem because it is less susceptible to heat transfer when its thermal resistance and the gap of the helium backside cavity are minimized; however, it is not a subject of the current study. Because oxygen-growth-based etch processes (due to their ultra thin inhibiting layer) rely more heavily on a constant wafer temperature than fluorocarbon-based processes, oxygen etches are more affected by temperature fluctuations and drifts during the etching. The fourth outcome of this review is a phenomenological model, which explains and predicts many features with respect to loading, flow and pressure behaviour in DRIE equipment including a diffusion zone. The model is a reshape of the flow model constructed by Mogab, who studied the loading effect in plasma etching. Despite the downside of needing a cryostat, it is shown that—when selecting proper conditions—a cryogenic two-step pulsed mode can be used as a successful technique to achieve high speed and selective plasma etching with an etch rate around 25 µm min-1 (<1% silicon load) with nearly vertical walls and resist etch selectivity beyond 1000. With the model in hand, it can be predicted that the etch rate can be doubled (50 µm min-1 at an efficiency of 33% for the fluorine generation from the SF6 feed gas) by minimizing the time the free radicals need to pass the diffusion zone. It is anticipated that this residence time can be reduced sufficiently by a proper inductive coupled plasma (ICP) source design (e.g. plasma shower head and concentrator). In order to preserve the correct profile at such high etch rates, the pressure during the bottom removal step should be minimized and, therefore, the synchronized three-step pulsed mode is believed to be essential to reach such high etch rates with sufficient profile control. In order to improve the etch rate even further, the ICP power should be enhanced; the upgrading of the turbopump seems not yet to be relevant because the throttle valve in the current study had to be used to restrict the turbo efficiency. In order to have a versatile list of state-of-the-art references, it has been decided to arrange it in subjects. The categories concerning plasma physics and applications are, for example, books, reviews, general topics, fluorine-based plasmas, plasma mixtures with oxygen at room temperature, wafer heat transfer and high aspect ratio trench (HART) etching. For readers 'new' to this field, it is advisable to study at least one (but rather more than one) of the reviews concerning plasma as found in the first 30 references. In many cases, a paper can be classified into more than one category. In such cases, the paper is directed to the subject most suited for the discussion of the current review. For example, many papers on heat transfer also treat cryogenic conditions and all the references dealing with highly anisotropic behaviour have been directed to the category HARTs. Additional pointers could get around this problem but have the disadvantage of creating a kind of written spaghetti. I hope that the adapted organization structure will help to have a quick look at and understanding of current developments in high aspect ratio plasma etching. Enjoy reading... Henri Jansen 18 June 2008

Radio frequency discharge with control of plasma potential distribution.

PubMed

Dudnikov, Vadim; Dudnikov, A

2012-02-01

A RF discharge plasma generator with additional electrodes for independent control of plasma potential distribution is proposed. With positive biasing of this ring electrode relative end flanges and longitudinal magnetic field a confinement of fast electrons in the discharge will be improved for reliable triggering of pulsed RF discharge at low gas density and rate of ion generation will be enhanced. In the proposed discharge combination, the electron energy is enhanced by RF field and the fast electron confinement is improved by enhanced positive plasma potential which improves the efficiency of plasma generation significantly. This combination creates a synergetic effect with a significantly improving the plasma generation performance at low gas density. The discharge parameters can be optimized for enhance plasma generation with acceptable electrode sputtering.

Dry etching of copper phthalocyanine thin films: effects on morphology and surface stoichiometry.

PubMed

Van Dijken, Jaron G; Brett, Michael J

2012-08-24

We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

Effect of sulfur hexafluoride gas and post-annealing treatment for inductively coupled plasma etched barium titanate thin films

PubMed Central

2014-01-01

Aerosol deposition- (AD) derived barium titanate (BTO) micropatterns are etched via SF6/O2/Ar plasmas using inductively coupled plasma (ICP) etching technology. The reaction mechanisms of the sulfur hexafluoride on BTO thin films and the effects of annealing treatment are verified through X-ray photoelectron spectroscopy (XPS) analysis, which confirms the accumulation of reaction products on the etched surface due to the low volatility of the reaction products, such as Ba and Ti fluorides, and these residues could be completely removed by the post-annealing treatment. The exact peak positions and chemicals shifts of Ba 3d, Ti 2p, O 1 s, and F 1 s are deduced by fitting the XPS narrow-scan spectra on as-deposited, etched, and post-annealed BTO surfaces. Compared to the as-deposited BTOs, the etched Ba 3d 5/2 , Ba 3d 3/2 , Ti 2p 3/2 , Ti 2p 1/2 , and O 1 s peaks shift towards higher binding energy regions by amounts of 0.55, 0.45, 0.4, 0.35, and 0.85 eV, respectively. A comparison of the as-deposited film with the post-annealed film after etching revealed that there are no significant differences in the fitted XPS narrow-scan spectra except for the slight chemical shift in the O 1 s peak due to the oxygen vacancy compensation in O2-excessive atmosphere. It is inferred that the electrical properties of the etched BTO film can be restored by post-annealing treatment after the etching process. Moreover, the relative permittivity and loss tangent of the post-annealed BTO thin films are remarkably improved by 232% and 2,695%, respectively. PMID:25249824

Physics-electrical hybrid model for real time impedance matching and remote plasma characterization in RF plasma sources.

PubMed

Sudhir, Dass; Bandyopadhyay, M; Chakraborty, A

2016-02-01

Plasma characterization and impedance matching are an integral part of any radio frequency (RF) based plasma source. In long pulse operation, particularly in high power operation where plasma load may vary due to different reasons (e.g. pressure and power), online tuning of impedance matching circuit and remote plasma density estimation are very useful. In some cases, due to remote interfaces, radio activation and, due to maintenance issues, power probes are not allowed to be incorporated in the ion source design for plasma characterization. Therefore, for characterization and impedance matching, more remote schemes are envisaged. Two such schemes by the same authors are suggested in these regards, which are based on air core transformer model of inductive coupled plasma (ICP) [M. Bandyopadhyay et al., Nucl. Fusion 55, 033017 (2015); D. Sudhir et al., Rev. Sci. Instrum. 85, 013510 (2014)]. However, the influence of the RF field interaction with the plasma to determine its impedance, a physics code HELIC [D. Arnush, Phys. Plasmas 7, 3042 (2000)] is coupled with the transformer model. This model can be useful for both types of RF sources, i.e., ICP and helicon sources.

Physics-electrical hybrid model for real time impedance matching and remote plasma characterization in RF plasma sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sudhir, Dass, E-mail: dass.sudhir@iter-india.org; Bandyopadhyay, M.; Chakraborty, A.

2016-02-15

Plasma characterization and impedance matching are an integral part of any radio frequency (RF) based plasma source. In long pulse operation, particularly in high power operation where plasma load may vary due to different reasons (e.g. pressure and power), online tuning of impedance matching circuit and remote plasma density estimation are very useful. In some cases, due to remote interfaces, radio activation and, due to maintenance issues, power probes are not allowed to be incorporated in the ion source design for plasma characterization. Therefore, for characterization and impedance matching, more remote schemes are envisaged. Two such schemes by the samemore » authors are suggested in these regards, which are based on air core transformer model of inductive coupled plasma (ICP) [M. Bandyopadhyay et al., Nucl. Fusion 55, 033017 (2015); D. Sudhir et al., Rev. Sci. Instrum. 85, 013510 (2014)]. However, the influence of the RF field interaction with the plasma to determine its impedance, a physics code HELIC [D. Arnush, Phys. Plasmas 7, 3042 (2000)] is coupled with the transformer model. This model can be useful for both types of RF sources, i.e., ICP and helicon sources.« less

Can we estimate plasma density in ICP driver through electrical parameters in RF circuit?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bandyopadhyay, M., E-mail: mainak@iter-india.org; Sudhir, Dass, E-mail: dass.sudhir@iter-india.org; Chakraborty, A., E-mail: arunkc@iter-india.org

2015-04-08

To avoid regular maintenance, invasive plasma diagnostics with probes are not included in the inductively coupled plasma (ICP) based ITER Neutral Beam (NB) source design. Even non-invasive probes like optical emission spectroscopic diagnostics are also not included in the present ITER NB design due to overall system design and interface issues. As a result, negative ion beam current through the extraction system in the ITER NB negative ion source is the only measurement which indicates plasma condition inside the ion source. However, beam current not only depends on the plasma condition near the extraction region but also on the perveancemore » condition of the ion extractor system and negative ion stripping. Nevertheless, inductively coupled plasma production region (RF driver region) is placed at distance (∼ 30cm) from the extraction region. Due to that, some uncertainties are expected to be involved if one tries to link beam current with plasma properties inside the RF driver. Plasma characterization in source RF driver region is utmost necessary to maintain the optimum condition for source operation. In this paper, a method of plasma density estimation is described, based on density dependent plasma load calculation.« less

Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl2/N2/O2 plasma with a low-energy ion bombardment

NASA Astrophysics Data System (ADS)

Zhong, Yaozong; Zhou, Yu; Gao, Hongwei; Dai, Shujun; He, Junlei; Feng, Meixin; Sun, Qian; Zhang, Jijun; Zhao, Yanfei; DingSun, An; Yang, Hui

2017-10-01

Etching of GaN/AlGaN heterostructure by O-containing inductively coupled Cl2/N2 plasma with a low-energy ion bombardment can be self-terminated at the surface of the AlGaN layer. The estimated etching rates of GaN and AlGaN were 42 and 0.6 nm/min, respectively, giving a selective etching ratio of 70:1. To study the mechanism of the etching self-termination, detailed characterization and analyses were carried out, including X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). It was found that in the presence of oxygen, the top surface of the AlGaN layer was converted into a thin film of (Al,Ga)Ox with a high bonding energy, which effectively prevented the underlying atoms from a further etching, resulting in a nearly self-terminated etching. This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

Inductive Electron Heating Revisited

NASA Astrophysics Data System (ADS)

Tuszewski, M.

1996-11-01

Inductively Coupled Plasmas (ICPs) have been studied for over a century. Recently, ICPs have been rediscovered by the multi-billion dollar semiconductor industry as an important class of high-density, low-pressure plasma sources suitable for the manufacture of next-generation integrated circuits. Present low-pressure ICP development is among the most active areas of plasma research. However, this development remains largely empirical, a prohibitively expensive approach for upcoming 300-mm diameter wafers. Hence, there is an urgent need for basic ICP plasma physics research, including experimental characterization and predictive numerical modeling. Inductive radio frequency (rf) power absorption is fundamental to the ICP electron heating and the resulting plasma transport but remains poorly understood. For example, recent experimental measurements and supporting fluid calculationsfootnote M. Tuszewski, Phys. Rev. Lett. 77 in press (1996) on a commercial deposition tool prototype show that the induced rf magnetic fields in the source can cause an order of magnitude reduction in plasma conductivity and in electron heating power density. In some cases, the rf fields penetrate through the entire volume of the ICP discharges while existing models that neglect the induced rf magnetic fields predict rf absorption in a thin skin layer near the plasma surface. The rf magnetic fields also cause more subtle changes in the plasma density and in the electron temperature spatial distributions. These data will be presented and the role of basic research in the applied world of semiconductor manufacturing will be discussed. ^*This research was conducted under the auspices of the U.S. DOE, supported by funds provided by the University of California for discretionary research by Los Alamos National Laboratory.

A 1D ion species model for an RF driven negative ion source

NASA Astrophysics Data System (ADS)

Turner, I.; Holmes, A. J. T.

2017-08-01

A one-dimensional model for an RF driven negative ion source has been developed based on an inductive discharge. The RF source differs from traditional filament and arc ion sources because there are no primary electrons present, and is simply composed of an antenna region (driver) and a main plasma discharge region. However the model does still make use of the classical plasma transport equations for particle energy and flow, which have previously worked well for modelling DC driven sources. The model has been developed primarily to model the Small Negative Ion Facility (SNIF) ion source at CCFE, but may be easily adapted to model other RF sources. Currently the model considers the hydrogen ion species, and provides a detailed description of the plasma parameters along the source axis, i.e. plasma temperature, density and potential, as well as current densities and species fluxes. The inputs to the model are currently the RF power, the magnetic filter field and the source gas pressure. Results from the model are presented and where possible compared to existing experimental data from SNIF, with varying RF power, source pressure.

Plasma Switch for High-Power Active Pulse Compressor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirshfield, Jay L.

2013-11-04

Results are presented from experiments carried out at the Naval Research Laboratory X-band magnicon facility on a two-channel X-band active RF pulse compressor that employed plasma switches. Experimental evidence is shown to validate the basic goals of the project, which include: simultaneous firing of plasma switches in both channels of the RF circuit, operation of quasi-optical 3-dB hybrid directional coupler coherent superposition of RF compressed pulses from both channels, and operation of the X-band magnicon directly in the RF pulse compressor. For incident 1.2 ?s pulses in the range 0.63 ? 1.35 MW, compressed pulses of peak powers 5.7 ?more » 11.3 MW were obtained, corresponding to peak power gain ratios of 8.3 ? 9.3. Insufficient bakeout and conditioning of the high-power RF circuit prevented experiments from being conducted at higher RF input power levels.« less

Long pulse EBW start-up experiments in MAST

DOE PAGES

Shevchenko, V. F.; Baranov, Y. F.; Bigelow, T.; ...

2015-03-12

Start-up technique reported here relies on a double mode conversion (MC) for electron Bernstein wave (EBW) excitation. It consists of MC of the ordinary (O) mode, entering the plasma from the low field side of the tokamak, into the extraordinary (X) mode at a mirror-polarizer located at the high field side. The X mode propagates back to the plasma, passes through electron cyclotron resonance (ECR) and experiences a subsequent X to EBW MC near the upper hybrid resonance (UHR). Finally the excited EBW mode is totally absorbed at the Doppler shifted ECR. The absorption of EBW remains high even inmore » cold rarefied plasmas. Furthermore, EBW can generate significant plasma current giving the prospect of a fully solenoid-free plasma start-up. First experiments using this scheme were carried out on MAST [1]. Plasma currents up to 33 kA have been achieved using 28 GHz 100kW 90ms RF pulses. Recently experimental results were extended to longer RF pulses showing further increase of plasma currents generated by RF power alone. A record current of 73kA has been achieved with 450ms RF pulse of similar power. The current drive enhancement was mainly achieved due to RF pulse extension and further optimisation of the start-up scenario.« less

Long pulse EBW start-up experiments in MAST

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shevchenko, V. F.; Baranov, Y. F.; Bigelow, T.

Start-up technique reported here relies on a double mode conversion (MC) for electron Bernstein wave (EBW) excitation. It consists of MC of the ordinary (O) mode, entering the plasma from the low field side of the tokamak, into the extraordinary (X) mode at a mirror-polarizer located at the high field side. The X mode propagates back to the plasma, passes through electron cyclotron resonance (ECR) and experiences a subsequent X to EBW MC near the upper hybrid resonance (UHR). Finally the excited EBW mode is totally absorbed at the Doppler shifted ECR. The absorption of EBW remains high even inmore » cold rarefied plasmas. Furthermore, EBW can generate significant plasma current giving the prospect of a fully solenoid-free plasma start-up. First experiments using this scheme were carried out on MAST [1]. Plasma currents up to 33 kA have been achieved using 28 GHz 100kW 90ms RF pulses. Recently experimental results were extended to longer RF pulses showing further increase of plasma currents generated by RF power alone. A record current of 73kA has been achieved with 450ms RF pulse of similar power. The current drive enhancement was mainly achieved due to RF pulse extension and further optimisation of the start-up scenario.« less

Long Pulse EBW Start-up Experiments in MAST

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shevchenko, V. F.; Bigelow, Tim S; Caughman, J. B. O.

Start-up technique reported here relies on a double mode conversion (MC) for electron Bernstein wave (EBW) excitation. It consists of MC of the ordinary (0) mode, entering the plasma from the low field side of the tokamak, into the extraordinary (X) mode at a mirror-polarizer located at the high field side. The X mode propagates back to the plasma, passes through electron cyclotron resonance (ECR) and experiences a subsequent X to EBW MC near the upper hybrid resonance (UHR). Finally the excited EBW mode is totally absorbed at the Doppler shifted ECR. The absorption of EBW remains high even inmore » cold rarefied plasmas. Furthermore, EBW can generate significant plasma current giving the prospect of a fully solenoid-free plasma start-up. First experiments using this scheme were carried out on MAST [1]. Plasma currents up to 33 kA have been achieved using 28 GHz 100kW 90ms RF pulses. Recently experimental results were extended to longer RF pulses showing further increase of plasma currents generated by RF power alone. A record current of 73kA has been achieved with 450ms RF pulse of similar power. The current drive enhancement was mainly achieved due to RF pulse extension and further optimisation of the start-up scenario.« less

Qualitative modeling of silica plasma etching using neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Kwon, Kwang Ho

2003-01-01

An etching of silica thin film is qualitatively modeled by using a neural network. The process was characterized by a 23 full factorial experiment plus one center point, in which the experimental factors and ranges include 100-800 W radio-frequency source power, 100-400 W bias power and gas flow rate ratio CHF3/CF4. The gas flow rate ratio varied from 0.2 to 5.0. The backpropagation neural network (BPNN) was trained on nine experiments and tested on six experiments, not pertaining to the original training data. The prediction ability of the BPNN was optimized as a function of the training parameters. Prediction errors are 180 Å/min and 1.33, for the etch rate and anisotropy models, respectively. Physical etch mechanisms were estimated from the three-dimensional plots generated from the optimized models. Predicted response surfaces were consistent with experimentally measured etch data. The dc bias was correlated to the etch responses to evaluate its contribution. Both the source power (plasma density) and bias power (ion directionality) strongly affected the etch rate. The source power was the most influential factor for the etch rate. A conflicting effect between the source and bias powers was noticed with respect to the anisotropy. The dc bias played an important role in understanding or separating physical etch mechanisms.

Etch bias inversion during EUV mask ARC etch

NASA Astrophysics Data System (ADS)

Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

2017-07-01

The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

Characterizing Fluorocarbon Assisted Atomic Layer Etching of Si Using Cyclic Ar/C 4F 8 and Ar/CHF 3 Plasma

DOE PAGES

Metzler, Dominik; Li, Chen; Engelmann, Sebastian; ...

2016-09-08

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Focused electron and ion beam systems

DOEpatents

Leung, Ka-Ngo; Reijonen, Jani; Persaud, Arun; Ji, Qing; Jiang, Ximan

2004-07-27

An electron beam system is based on a plasma generator in a plasma ion source with an accelerator column. The electrons are extracted from a plasma cathode in a plasma ion source, e.g. a multicusp plasma ion source. The beam can be scanned in both the x and y directions, and the system can be operated with multiple beamlets. A compact focused ion or electron beam system has a plasma ion source and an all-electrostatic beam acceleration and focusing column. The ion source is a small chamber with the plasma produced by radio-frequency (RF) induction discharge. The RF antenna is wound outside the chamber and connected to an RF supply. Ions or electrons can be extracted from the source. A multi-beam system has several sources of different species and an electron beam source.

Development of FullWave : Hot Plasma RF Simulation Tool

NASA Astrophysics Data System (ADS)

Svidzinski, Vladimir; Kim, Jin-Soo; Spencer, J. Andrew; Zhao, Liangji; Galkin, Sergei

2017-10-01

Full wave simulation tool, modeling RF fields in hot inhomogeneous magnetized plasma, is being developed. The wave equations with linearized hot plasma dielectric response are solved in configuration space on adaptive cloud of computational points. The nonlocal hot plasma dielectric response is formulated in configuration space without limiting approximations by calculating the plasma conductivity kernel based on the solution of the linearized Vlasov equation in inhomogeneous magnetic field. This approach allows for better resolution of plasma resonances, antenna structures and complex boundaries. The formulation of FullWave and preliminary results will be presented: construction of the finite differences for approximation of derivatives on adaptive cloud of computational points; model and results of nonlocal conductivity kernel calculation in tokamak geometry; results of 2-D full wave simulations in the cold plasma model in tokamak geometry using the formulated approach; results of self-consistent calculations of hot plasma dielectric response and RF fields in 1-D mirror magnetic field; preliminary results of self-consistent simulations of 2-D RF fields in tokamak using the calculated hot plasma conductivity kernel; development of iterative solver for wave equations. Work is supported by the U.S. DOE SBIR program.

Dusty waves and vortices in rf magnetron discharge plasma

NASA Astrophysics Data System (ADS)

Filippov, A. V.; Pal, A. F.; Ryabinkin, A. N.; Serov, A. O.; Shugaev, F. V.

2018-01-01

The appearance and subsequent growth of metallic particles in plasma of planar rf magnetron sputter were observed. The origin of the particles is sputtering of the rf electrode by ion flux from the plasma. In some regions of formed dust cloud the particles were involved in the horizontal or vertical circular movement. The horizontal rotation along the sputtered track in the cyclotron drift direction was observed close to the main magnetron plasma. The torus-shaped dust vortex ring engirdled the secondary plasma of the discharge at height of a few centimeters over the electrode. Close to this region particle density waves propagated through the cloud. The possible role of discharge plasma azimuthal inhomogeneity and gas dynamics effects in the forming the observed structures was considered.

Process technologies of MPACVD planar waveguide devices and fiber attachment

NASA Astrophysics Data System (ADS)

Li, Cheng-Chung; Qian, Fan; Boudreau, Robert A.; Rowlette, John R., Sr.; Bowen, Terry P.

1999-03-01

Optical circuits based on low-loss glass waveguide on silicon are a practical and promising approach to integrate different functional components. Fiber attachment to planar waveguide provides a practical application for optical communications. Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) produces superior quality, low birefringence, low-loss, planar waveguides for integrated optical devices. Microwave plasma initiates the chemical vapor of SiCl4, GeCl4 and oxygen. A Ge-doped silica layer is thus deposited with a compatible high growth rate (i.e. 0.4 - 0.5 micrometer/min). Film properties are based on various parameters, such as chemical flow rates, chamber pressure and temperature, power level and injector design. The resultant refractive index can be varied between 1.46 (i.e. pure silica) and 1.60 (i.e. pure germania). Waveguides can be fabricated with any desired refractive index profile. Standard photolithography defines the waveguide pattern on a mask layer. The core layer is removed by plasma dry etch which has been investigated by both reactive ion etch (RIE) and inductively coupled plasma (ICP) etch. Etch rates of 3000 - 4000 angstrom/min have been achieved using ICP compared to typical etch rates of 200 - 300 angstrom/min using conventional RIE. Planar waveguides offer good mode matching to optical fiber. A polished fiber end can be glued to the end facet of waveguide with a very low optical coupling loss. In addition, anisotropic etching of silicon V- grooves provides a passive alignment capability. Epoxy and solder were used to fix the fiber within the guiding groove. Several designs of waveguide-fiber attachment will be discussed.

Equivalent circuit of radio frequency-plasma with the transformer model

NASA Astrophysics Data System (ADS)

Nishida, K.; Mochizuki, S.; Ohta, M.; Yasumoto, M.; Lettry, J.; Mattei, S.; Hatayama, A.

2014-02-01

LINAC4 H- source is radio frequency (RF) driven type source. In the RF system, it is required to match the load impedance, which includes H- source, to that of final amplifier. We model RF plasma inside the H- source as circuit elements using transformer model so that characteristics of the load impedance become calculable. It has been shown that the modeling based on the transformer model works well to predict the resistance and inductance of the plasma.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO{sub 2}), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followedmore » the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide.« less

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

PubMed

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C 4F 8 ALE based on steady-state Ar plasma in conjunction with periodic, precise C 4F 8 injection and synchronized plasma-based low energy Ar + ion bombardment has been established for SiO 2. 1 In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF 3 as a precursor is examined and compared to C 4F 8. CHF 3 is shown to enablemore » selective SiO 2/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and X-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. As a result, plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Computational studies on scattering of radio frequency waves by density filaments in fusion plasmas

NASA Astrophysics Data System (ADS)

Ioannidis, Zisis C.; Ram, Abhay K.; Hizanidis, Kyriakos; Tigelis, Ioannis G.

2017-10-01

In modern magnetic fusion devices, such as tokamaks and stellarators, radio frequency (RF) waves are commonly used for plasma heating and current profile control, as well as for certain diagnostics. The frequencies of the RF waves range from ion cyclotron frequency to the electron cyclotron frequency. The RF waves are launched from structures, like waveguides and current straps, placed near the wall in a very low density, tenuous plasma region of a fusion device. The RF electromagnetic fields have to propagate through this scrape-off layer before coupling power to the core of the plasma. The scrape-off layer is characterized by turbulent plasmas fluctuations and by blobs and filaments. The variations in the edge density due to these fluctuations and filaments can affect the propagation characteristics of the RF waves—changes in density leading to regions with differing plasma permittivity. Analytical full-wave theories have shown that scattering by blobs and filaments can alter the RF power flow into the core of the plasma in a variety of ways, such as through reflection, refraction, diffraction, and shadowing [see, for example, Ram and Hizanidis, Phys. Plasmas 23, 022504 (2016), and references therein]. There are changes in the wave vectors and the distribution of power-scattering leading to coupling of the incident RF wave to other plasma waves, side-scattering, surface waves, and fragmentation of the Poynting flux in the direction towards the core. However, these theoretical models are somewhat idealized. In particular, it is assumed that there is step-function discontinuity in the density between the plasma inside the filament and the background plasma. In this paper, results from numerical simulations of RF scattering by filaments using a commercial full-wave code are described. The filaments are taken to be cylindrical with the axis of the cylinder aligned along the direction of the ambient magnetic field. The plasma inside and outside the filament is assumed to be cold. There are three primary objectives of these studies. The first objective is to validate the numerical simulations by comparing with the analytical results for the same plasma description—a step-function discontinuity in density. A detailed comparison of the Poynting flux shows that numerical simulations lead to the same results as those from the theoretical model. The second objective is to extend the simulations to take into account a smooth transition in density from the background plasma to the interior of the filament. The ensuing comparison shows that the deviations from the results of the theoretical model are quite small. The third objective is to consider the scattering process for situations well beyond a reasonable theoretical analysis. This includes scattering off multiple filaments with different densities and sizes. Simulations for these complex arrangements of filaments show that, in spite of the obvious limitations, the essential physics of RF scattering is captured by the analytical theory for a single filament.

The study of helicon plasma source.

PubMed

Miao, Ting-Ting; Zhao, Hong-Wei; Liu, Zhan-Wen; Shang, Yong; Sun, Liang-Ting; Zhang, Xue-Zhen; Zhao, Huan-Yu

2010-02-01

Helicon plasma source is known as efficient generator of uniform and high density plasma. A helicon plasma source was developed for investigation of plasma neutralization and plasma lens in the Institute of Modern Physics in China. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high argon plasma density up to 3.9x10(13) cm(-3) have been achieved with the Nagoya type III antenna at the conditions of the magnetic intensity of 200 G, working gas pressure of 2.8x10(-3) Pa, and rf power of 1200 W with a frequency of 27.12 MHz. In the experiment, the important phenomena have been found: for a given magnetic induction intensity, the plasma density became greater with the increase in rf power and tended to saturation, and the helicon mode appeared at the rf power between 200 and 400 W.

Method of fabricating vertically aligned group III-V nanowires

DOEpatents

Wang, George T; Li, Qiming

2014-11-25

A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.

Generation of whistler-wave heated discharges with planar resonant RF networks.

PubMed

Guittienne, Ph; Howling, A A; Hollenstein, Ch

2013-09-20

Magnetized plasma discharges generated by a planar resonant rf network are investigated. A regime transition is observed above a magnetic field threshold, associated with rf waves propagating in the plasma and which present the characteristics of whistler waves. These wave heated regimes can be considered as analogous to conventional helicon discharges, but in planar geometry.

RF power absorption by plasma of low pressure low power inductive discharge located in the external magnetic field

NASA Astrophysics Data System (ADS)

Kralkina, E. A.; Rukhadze, A. A.; Nekliudova, P. A.; Pavlov, V. B.; Petrov, A. K.; Vavilin, K. V.

2018-03-01

Present paper is aimed to reveal experimentally and theoretically the influence of magnetic field strength, antenna shape, pressure, operating frequency and geometrical size of plasma sources on the ability of plasma to absorb the RF power characterized by the equivalent plasma resistance for the case of low pressure RF inductive discharge located in the external magnetic field. The distinguishing feature of the present paper is the consideration of the antennas that generate not only current but charge on the external surface of plasma sources. It is shown that in the limited plasma source two linked waves can be excited. In case of antennas generating only azimuthal current the waves can be attributed as helicon and TG waves. In the case of an antenna with the longitudinal current there is a surface charge on the side surface of the plasma source, which gives rise to a significant increase of the longitudinal and radial components of the RF electric field as compared with the case of the azimuthal antenna current.

Fast and controlled fabrication of porous graphene oxide: application of AFM tapping for mechano-chemistry

NASA Astrophysics Data System (ADS)

Chu, Liangyong; Korobko, Alexander V.; Bus, Marcel; Boshuizen, Bart; Sudhölter, Ernst J. R.; Besseling, Nicolaas A. M.

2018-05-01

This paper describes a novel method to fabricate porous graphene oxide (PGO) from GO by exposure to oxygen plasma. Compared to other methods to fabricate PGO described so far, e.g. the thermal and steam etching methods, oxygen plasma etching method is much faster. We studied the development of the porosity with exposure time using atomic force microscopy (AFM). It was found that the development of PGO upon oxygen-plasma exposure can be controlled by tapping mode AFM scanning using a Si tip. AFM tapping stalls the growth of pores upon further plasma exposure at a level that coincides with the fraction of sp2 carbons in the GO starting material. We suggest that AFM tapping procedure changes the bond structure of the intermediate PGO structure, and these stabilized PGO structures cannot be further etched by oxygen plasma. This constitutes the first report of tapping AFM as a tool for local mechano-chemistry.

Fast and controlled fabrication of porous graphene oxide: application of AFM tapping for mechano-chemistry.

PubMed

Chu, Liangyong; Korobko, Alexander V; Bus, Marcel; Boshuizen, Bart; Sudhölter, Ernst J R; Besseling, Nicolaas A M

2018-05-04

This paper describes a novel method to fabricate porous graphene oxide (PGO) from GO by exposure to oxygen plasma. Compared to other methods to fabricate PGO described so far, e.g. the thermal and steam etching methods, oxygen plasma etching method is much faster. We studied the development of the porosity with exposure time using atomic force microscopy (AFM). It was found that the development of PGO upon oxygen-plasma exposure can be controlled by tapping mode AFM scanning using a Si tip. AFM tapping stalls the growth of pores upon further plasma exposure at a level that coincides with the fraction of sp 2 carbons in the GO starting material. We suggest that AFM tapping procedure changes the bond structure of the intermediate PGO structure, and these stabilized PGO structures cannot be further etched by oxygen plasma. This constitutes the first report of tapping AFM as a tool for local mechano-chemistry.

Manufacture of radio frequency micromachined switches with annealing.

PubMed

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-17

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

Manufacture of Radio Frequency Micromachined Switches with Annealing

PubMed Central

Lin, Cheng-Yang; Dai, Ching-Liang

2014-01-01

The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V. PMID:24445415

Deep anisotropic ICP plasma etching designed for high-volume MEMS manufacturing

NASA Astrophysics Data System (ADS)

Yu, Keven; Feldbaum, Michael; Pandhumsoporn, Tam; Gadgil, Prashant

1999-08-01

ICP plasma etching is gaining widespread acceptance as an enabling micromachining technology for advanced MEMS fabrication. Whereas this technology has shown a capability of delivering multiple novel applications for R and D, its acceptance by industry for high volume production has been limited. This acceptance into production will only occur when the plasma etching equipment with this technology offers the device performance, throughput, reliability, and uptime criteria required by a production facility. The design of the plasma etcher using this technology and the process capability it consequently delivers, has significant implications in making this a reality. Alcatel has been supplying such a technology to this MEMS industry for over 5 years and in the interim has evolved its product and process to make this technology production worthy. Alcatel's next generation etcher, the Alcatel 601E, offers multiple advantages to MEMS manufacturers in realizing their production goals.

Wafer scale oblique angle plasma etching

DOEpatents

Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

2017-05-23

Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

Ion extraction from a saddle antenna RF surface plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudnikov, V., E-mail: vadim@muonsinc.com; Johnson, R. P.; Han, B.

Existing RF Surface Plasma Sources (SPS) for accelerators have specific efficiencies for H{sup +} and H{sup −} ion generation around 3 to 5 mA/cm{sup 2} per kW, where about 50 kW of RF power is typically needed for 50 mA beam current production. The Saddle Antenna (SA) SPS described here was developed to improve H{sup −} ion production efficiency and SPS reliability and availability. At low RF power, the efficiency of positive ion generation in the plasma has been improved to 200 mA/cm{sup 2} per kW of RF power at 13.56 MHz. Initial cesiation of the SPS was performed bymore » heating cesium chromate cartridges by discharge as was done in the very first versions of the SPS. A small oven to decompose cesium compounds and alloys was developed and tested. After cesiation, the current of negative ions to the collector was increased from 1 mA to 10 mA with RF power ∼1.5 kW in the plasma (6 mm diameter emission aperture) and up to 30 mA with ∼4 kW RF power in the plasma and 250 Gauss longitudinal magnetic field. The ratio of electron current to negative ion current was improved from 30 to 2. Stable generation of H{sup −} beam without intensity degradation was demonstrated in the AlN discharge chamber for a long time at high discharge power in an RF SPS with an external antenna. Continuous wave (CW) operation of the SA SPS has been tested on the small test stand. The general design of the CW SA SPS is based on the pulsed version. Some modifications were made to improve the cooling and cesiation stability. The extracted collector current can be increased significantly by optimizing the longitudinal magnetic field in the discharge chamber. CW operation with negative ion extraction was tested with RF power up to 1.8 kW from the generator (∼1.2 kW in the plasma) with production up to Ic=7 mA. Long term operation was tested with 1.2 kW from the RF generator (∼0.8 kW in the plasma) with production of Ic=5 mA, Iex ∼15 mA (Uex=8 kV, Uc=14 kV)« less

Ion extraction from a saddle antenna RF surface plasma source

NASA Astrophysics Data System (ADS)

Dudnikov, V.; Johnson, R. P.; Han, B.; Murray, S.; Pennisi, T.; Piller, C.; Santana, M.; Stockli, M.; Welton, R.; Breitschopf, J.; Dudnikova, G.

2015-04-01

Existing RF Surface Plasma Sources (SPS) for accelerators have specific efficiencies for H+ and H- ion generation around 3 to 5 mA/cm2 per kW, where about 50 kW of RF power is typically needed for 50 mA beam current production. The Saddle Antenna (SA) SPS described here was developed to improve H- ion production efficiency and SPS reliability and availability. At low RF power, the efficiency of positive ion generation in the plasma has been improved to 200 mA/cm2 per kW of RF power at 13.56 MHz. Initial cesiation of the SPS was performed by heating cesium chromate cartridges by discharge as was done in the very first versions of the SPS. A small oven to decompose cesium compounds and alloys was developed and tested. After cesiation, the current of negative ions to the collector was increased from 1 mA to 10 mA with RF power ˜1.5 kW in the plasma (6 mm diameter emission aperture) and up to 30 mA with ˜4 kW RF power in the plasma and 250 Gauss longitudinal magnetic field. The ratio of electron current to negative ion current was improved from 30 to 2. Stable generation of H- beam without intensity degradation was demonstrated in the AlN discharge chamber for a long time at high discharge power in an RF SPS with an external antenna. Continuous wave (CW) operation of the SA SPS has been tested on the small test stand. The general design of the CW SA SPS is based on the pulsed version. Some modifications were made to improve the cooling and cesiation stability. The extracted collector current can be increased significantly by optimizing the longitudinal magnetic field in the discharge chamber. CW operation with negative ion extraction was tested with RF power up to 1.8 kW from the generator (˜1.2 kW in the plasma) with production up to Ic=7 mA. Long term operation was tested with 1.2 kW from the RF generator (˜0.8 kW in the plasma) with production of Ic=5 mA, Iex ˜15 mA (Uex=8 kV, Uc=14 kV).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yang; Liu, Xiao Wei; Zhang, Hai Feng, E-mail: wy3121685@163.com

In this work, we present a method of fabricating super-hydrophobic surface on aluminum alloy substrate. The etching of aluminum surfaces has been performed using Beck's dislocation etchant for different time to create micrometer-sized irregular steps. An optimised etching time of 50 s is found to be essential before polytetrafluoroethylene (PTFE) coating, to obtain a highest water contact angle of 165±2° with a lowest contact angle hysteresis as low as 5±2°. The presence of patterned microstructure as revealed by scanning electron microscopy (SEM) together with the low surface energy ultrathin RF-sputtered PTFE films renders the aluminum alloy surfaces highly super-hydrophobic.

On RF heating of inhomogeneous collisional plasma under ion-cyclotron resonance conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Timofeev, A. V., E-mail: Timofeev-AV@nrcki.ru

2015-11-15

During ion-cyclotron resonance (ICR) heating of plasma by the magnetic beach method, as well as in some other versions of ICR heating, it is necessary to excite Alfvén oscillations. In this case, it is difficult to avoid the phenomenon of the Alfvén resonance, in which Alfvén oscillations transform into lower hybrid oscillations. The latter efficiently interact with electrons, due to which most of the deposited RF energy is spent on electron (rather than ion) heating. The Alfvén resonance takes place due to plasma inhomogeneity across the external magnetic field. Therefore, it could be expected that variations in the plasma densitymore » profile would substantially affect the efficiency of the interaction of RF fields with charged particles. However, the results obtained for different plasma density profiles proved to be nearly the same. In the present work, a plasma is considered the parameters of which correspond to those planned in future ICR plasma heating experiments on the PS-1 facility at the Kurchatov Institute. When analyzing the interaction of RF fields with charged particles, both the collisionless resonance interaction and the interaction caused by Coulomb collisions are taken into account, because, in those experiments, the Coulomb collision frequency will be comparable with the frequency of the heating field. Antennas used for ICR heating excite RF oscillations with a wide spectrum of wavenumbers along the magnetic field. After averaging over the spectrum, the absorbed RF energy calculated with allowance for collisions turns out to be close to that absorbed in collisionless plasma, the energy fraction absorbed by electrons being substantially larger than that absorbed by ions.« less

Transport of a helicon plasma by a convergent magnetic field for high speed and compact plasma etching

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Motomura, Taisei; Ando, Akira; Kasashima, Yuji; Kikunaga, Kazuya; Uesugi, Fumihiko; Hara, Shiro

2014-10-01

A high density argon plasma produced in a compact helicon source is transported by a convergent magnetic field to the central region of a substrate located downstream of the source. The magnetic field converging near the source exit is applied by a solenoid and further converged by installing a permanent magnet (PM) behind the substrate, which is located downstream of the source exit. Then a higher plasma density above 5 × 1012 cm-3 can be obtained in 0.2 Pa argon near the substrate, compared with the case without the PM. As no noticeable changes in the radially integrated density near the substrate and the power transfer efficiency are detected when testing the source with and without the PM, it can be deduced that the convergent field provided by the PM plays a role in constricting the plasma rather than in improving the plasma production. Furthermore it is applied to physical ion etching of silicon and aluminum substrates; then high etching rates of 6.5 µm min-1 and 8 µm min-1 are obtained, respectively.

Study of Plasma Chemistry and Plasma Processing.

DTIC Science & Technology

1983-01-01

m, 20% 0,0-oxybisfpropionitrile] on Chrom W column in these reactions comes from their pertinence to prebiotic was used for cyanogen and gaseous...xerography, prebiotic chemistry, and chemistry in the ionosphere. L -5- Euipment for RF Reactions Virtually all of the work on organic plasmas has used RF

Investigation of RF Emissions from Electric Field Dominated Plasmas

DTIC Science & Technology

1989-03-31

David Rosenberg and Mr. Paul D. Spence, "RF Plasma Emissions Measured with Calibrated, Broadband Antenna". February 19 Mr. Antonino Carnevali, Fusion...plasma equipment exhibitors, and major Japanese i fusion facilities. November 20 Dr. Antonino Carnevalli, RPI and Fusion Energy Division, ORNL: "H av Ion

Research on Heating, Instabilities, Turbulence and RF Emission from Electric Field Dominated Plasmas

DTIC Science & Technology

1989-07-01

Spence, "RF Plasma Emissions Measured with Calibrated, Broadband Antenna". February 19 Mr. Antonino Carnevali, Fusion Energy Division, ORNL,"Confinement...slides of the conference, plasma equipment exhibitors, and major Japanese fusion facilities. November 20 Dr. Antonino Carnevalli, RPI and Fusion Energy

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane.

DTIC Science & Technology

1985-02-18

regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen...addition demonstrated significant changes in the silicon atom profiles near the sheath boundary. Originator supplied keywords include: rf discharge, silane, plasma chemistry , silicon atom, laser-induced fluorescence.

Plasma Surface Modification of Polyaramid Fibers for Protective Clothing

NASA Astrophysics Data System (ADS)

Widodo, Mohamad

2011-12-01

The purpose of this research was to develop a novel process that would achieve biocidal properties on Kevlar fabric via atmospheric pressure plasma jet (APPJ) induced-graft polymerization of monomers. In the course of the study, experiments were carried out to understand plasma-monomer-substrate interactions, particularly, how each of the main parameters in the plasma processing affects the formation of surface radicals and eventually the degree of graft polymerization of monomers. The study also served to explore the possibility of developing plasma-initiated and plasma-controlled graft polymerization for continuous operation. In this regards, three methods of processing were studied, which included two-step plasma graft-polymerization with immersion, two-step and one-step plasma graft-polymerization with pad-dry. In general, plasma treatment did not cause visible damage to the surface of Kevlar fibers, except for the appearance of tiny globules distributed almost uniformly indicating a minor effect of plasma treatment to the surface morphology of the polymer. From the examination of SEM images, however, it was found that a very localized surface etching seemed to have taken place, especially at high RF power (800 W) and long time of exposure (60 s), even in plasma downstream mode of operation. It was suggested that a small amount of charged particles might have escaped and reached the substrate surface. High density of surface radicals, which is the prerequisite for high graft density and high antimicrobial activity, was achieved by the combination of high RF power and short exposure time or low RF power and long time of exposure. This was a clear indication that the formation of surface radicals is a function of amount of the dissipated energy, which also explained the two-factor interaction between the two process parameters. XPS results showed that hydrolysis of the anilide bond of PPTA chains took place to some extent on the surface of Kevlar, leading to the formation carboxylic and phenyl amine groups, which may provide additional active sites for grafting by way of hydrogen abstraction from the latter. Further analysis of XPS data, however, showed that macroradicals and active sites of grafting were formed at least at one of the carbon atoms in the aromatic ring. A reduction of microbial activity up to 3-log reduction was achieved by plasma treated Kevlar grafted by either diallyl diammonium chloride (DADMAC) or 3- ((trimethoxysilyl)-propyl) dimethylammonium chloride (TMS), with the latter being the one with better performance. It was found that high antimicrobial activity was obtained by the combination of high RF power, short time of exposure, and low concentration of monomer. Of the three processing methods studied, the one with immersion method produced higher graft yield. However, one-step plasma graft-polymerization with pad-dry method has proven itself more interesting due to its potential for an open continuous process. This research has been successful in producing effective antimicrobial properties on Kevlar fabric by plasma-initiated and plasma-controlled graft polymerization, which is unprecedented. The design of experiments showed that better results with higher order of log reduction can be obtained by process optimization, e.g. by using response surface methods. It would also be very beneficial to continue the research for the development of plasma graft-polymerization process with more rigorous design, which involves the use of crosslinker and antimicrobial monomers with different chemistry. A study that involves the development of a robust design for processes that perform consistently as intended under a wide range of user's conditions and yet produce high-level performance with high reliability would also be advantageous. The major implication of the findings from this research for the finishing of Kevlar is that a wide array of different surface functionalities may become more readily available now than ever. Plasma technology has made surface chemistry functionalization of Kevlar more straightforward and easier to perform, which opens new avenues for achieving functional and multifunctional Kevlar fabrics using a fast, more economic and environmentally friendly continuous process for niche market such as military applications and protective clothing for emergency responders.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Three-dimensional photonic crystals created by single-step multi-directional plasma etching.

PubMed

Suzuki, Katsuyoshi; Kitano, Keisuke; Ishizaki, Kenji; Noda, Susumu

2014-07-14

We fabricate 3D photonic nanostructures by simultaneous multi-directional plasma etching. This simple and flexible method is enabled by controlling the ion-sheath in reactive-ion-etching equipment. We realize 3D photonic crystals on single-crystalline silicon wafers and show high reflectance (>95%) and low transmittance (<-15dB) at optical communication wavelengths, suggesting the formation of a complete photonic bandgap. Moreover, our method simply demonstrates Si-based 3D photonic crystals that show the photonic bandgap effect in a shorter wavelength range around 0.6 μm, where further fine structures are required.

Review Article: Unraveling synergistic effects in plasma-surface processes by means of beam experiments

PubMed Central

von Keudell, Achim; Corbella, Carles

2017-01-01

The interaction of plasmas with surfaces is dominated by synergistic effects between incident ions and radicals. Film growth is accelerated by the ions, providing adsorption sites for incoming radicals. Chemical etching is accelerated by incident ions when chemical etching products are removed from the surface by ion sputtering. The latter is the essence of anisotropic etching in microelectronics, as elucidated by the seminal paper of Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)]. However, ion-radical-synergisms play also an important role in a multitude of other systems, which are described in this article: (1) hydrocarbon thin film growth from methyl radicals and hydrogen atoms; (2) hydrocarbon thin film etching by ions and reactive neutrals; (3) plasma inactivation of bacteria; (4) plasma treatment of polymers; and (5) oxidation mechanisms during reactive magnetron sputtering of metal targets. All these mechanisms are unraveled by using a particle beam experiment to mimic the plasma–surface interface with the advantage of being able to control the species fluxes independently. It clearly shows that the mechanisms in action that had been described by Coburn and Winters [J. Appl. Phys. 50, 3189 (1979)] are ubiquitous. PMID:29104360

Comparison of three rf plasma impedance monitors on a high phase angle planar inductively coupled plasma source

NASA Astrophysics Data System (ADS)

Uchiyama, H.; Watanabe, M.; Shaw, D. M.; Bahia, J. E.; Collins, G. J.

1999-10-01

Accurate measurement of plasma source impedance is important for verification of plasma circuit models, as well as for plasma process characterization and endpoint detection. Most impedance measurement techniques depend in some manner on the cosine of the phase angle to determine the impedance of the plasma load. Inductively coupled plasmas are generally highly inductive, with the phase angle between the applied rf voltage and the rf current in the range of 88 to near 90 degrees. A small measurement error in this phase angle range results in a large error in the calculated cosine of the angle, introducing large impedance measurement variations. In this work, we have compared the measured impedance of a planar inductively coupled plasma using three commercial plasma impedance monitors (ENI V/I probe, Advanced Energy RFZ60 and Advanced Energy Z-Scan). The plasma impedance is independently verified using a specially designed match network and a calibrated load, representing the plasma, to provide a measurement standard.

rf power system for thrust measurements of a helicon plasma source.

PubMed

Kieckhafer, Alexander W; Walker, Mitchell L R

2010-07-01

A rf power system has been developed, which allows the use of rf plasma devices in an electric propulsion test facility without excessive noise pollution in thruster diagnostics. Of particular importance are thrust stand measurements, which were previously impossible due to noise. Three major changes were made to the rf power system: first, the cable connection was changed from a balanced transmission line to an unbalanced coaxial line. Second, the rf power cabinet was placed remotely in order to reduce vibration-induced noise in the thrust stand. Finally, a relationship between transmission line length and rf was developed, which allows good transmission of rf power from the matching network to the helicon antenna. The modified system was tested on a thrust measurement stand and showed that rf power has no statistically significant contribution to the thrust stand measurement.

Measurements and modeling of radio frequency field structures in a helicon plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, C. A.; Chen, Guangye; Arefiev, A. V.

2011-01-01

Measurements of the radio frequency (rf) field structure, plasma density, and electron temperature are presented for a 1 kW argon helicon plasma source. The measured profiles change considerably when the equilibrium magnetic field is reversed. The measured rf fields are identified as fields of radially localized helicon waves, which propagate in the axial direction. The rf field structure is compared to the results of two-dimensional cold plasma full-wave simulations for the measured density profiles. Electron collision frequency is adjusted in the simulations to match the simulated and measured field profiles. The resulting frequency is anomalously high, which is attributed tomore » the excitation of an ion-acoustic instability. The calculated power deposition is insensitive to the collision frequency and accounts for most of the power supplied by the rf-generator.« less

Spatial distribution of the RF power absorbed in a helicon plasma source

NASA Astrophysics Data System (ADS)

Aleksenko, O. V.; Miroshnichenko, V. I.; Mordik, S. N.

2014-08-01

The spatial distributions of the RF power absorbed by plasma electrons in an ion source operating in the helicon mode (ω ci < ω < ω ce < ω pe ) are studied numerically by using a simplified model of an RF plasma source in an external uniform magnetic field. The parameters of the source used in numerical simulations are determined by the necessity of the simultaneous excitation of two types of waves, helicons and Trivelpiece-Gould modes, for which the corresponding transparency diagrams are used. The numerical simulations are carried out for two values of the working gas (helium) pressure and two values of the discharge chamber length under the assumption that symmetric modes are excited. The parameters of the source correspond to those of the injector of the nuclear scanning microprobe operating at the Institute of Applied Physics, National Academy of Sciences of Ukraine. It is assumed that the mechanism of RF power absorption is based on the acceleration of plasma electrons in the field of a Trivelpiece-Gould mode, which is interrupted by pair collisions of plasma electrons with neutral atoms and ions of the working gas. The simulation results show that the total absorbed RF power at a fixed plasma density depends in a resonant manner on the magnetic field. The resonance is found to become smoother with increasing working gas pressure. The distributions of the absorbed RF power in the discharge chamber are presented. The achievable density of the extracted current is estimated using the Bohm criterion.

Selective etching of silicon carbide films

DOEpatents

Gao, Di; Howe, Roger T.; Maboudian, Roya

2006-12-19

A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Plasma chemistry study of PLAD processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin Shu; Brumfield, Kyle; Liu, Lequn Jennifer

2012-11-06

Plasma doping (PLAD) shows very different impurity profiles compared to the conventional beam-line-based ion implantations due to its non-mass separation property and plasma environment. There is no simulation for PLAD process so far due to a lack of a dopant profile model. Several factors determine impurity profiles of PLAD process. The most significant factors are: plasma chemistry and deposition/etching characteristics of multi-ion species plasmas. In this paper, we present plasma chemistry and deposition/etching characteristics of PLAD processes versus co-gas dilutions. Four dopant plasmas including B{sub 2}H{sub 6}, BF{sub 3}, AsH{sub 3}, and PH{sub 3}, and two non-dopant plasmas including CH{submore » 4} and GeH{sub 4} are studied and demonstrated.« less

Studies on omnidirectional enhancement of giga-hertz radiation by sub-wavelength plasma modulation

NASA Astrophysics Data System (ADS)

Fanrong, KONG; Qiuyue, NIE; Shu, LIN; Zhibin, WANG; Bowen, LI; Shulei, ZHENG; Binhao, JIANG

2018-01-01

The technology of radio frequency (RF) radiation intensification for radio compact antennas based on modulation and enhancement effects of sub-wavelength plasma structures represents an innovative developing strategy. It exhibits important scientific significance and promising potential of broad applications in various areas of national strategic demands, such as electrical information network and microwave communication, detection and control technology. In this paper, laboratory experiments and corresponding analyses have been carried out to investigate the modulation and enhancement technology of sub-wavelength plasma structure on the RF electromagnetic radiation. An application focused sub-wavelength plasma-added intensification up to ∼7 dB higher than the free-space radiation is observed experimentally in giga-hertz (GHz) RF band. The effective radiation enhancement bandwidth covers from 0.85 to 1.17 GHz, while the enhanced electromagnetic signals transmitted by sub-wavelength plasma structures maintain good communication quality. Particularly, differing from the traditional RF electromagnetic radiation enhancement method characterized by focusing the radiation field of antenna in a specific direction, the sub-wavelength plasma-added intensification of the antenna radiation presents an omnidirectional enhancement, which is reported experimentally for the first time. Corresponding performance characteristics and enhancement mechanism analyses are also conducted in this paper. The results have demonstrated the feasibility and promising potential of sub-wavelength plasma modulation in application focused RF communication, and provided the scientific basis for further research and development of sub-wavelength plasma enhanced compact antennas with wide-range requests and good quality for communication.

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

NASA Astrophysics Data System (ADS)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617 -253-5668; Fax 617-253-1690.) (Abstract shortened with permission of school.).

Measurement of plasma sheath overlap above a trench

NASA Astrophysics Data System (ADS)

Sheridan, T. E.; Steinberger, Thomas E.

2017-06-01

The plasma sheath above a rectangular trench has been experimentally characterized as the trench width is varied in a radio frequency (rf) plasma discharge for two different rf powers giving two different sets of plasma parameters. Measurements were made using the positions and all six normal mode frequencies of two dust particles floating just inside the sheath edge above the center of the trench. We find that sheath overlap occurs when the trench width ≲ 3 s 0 for a trench depth ≈0.7s0, where s0 is the planar sheath width. The electric field gradient inside the sheath edge increases with rf power.

Spherical neutron generator

DOEpatents

Leung, Ka-Ngo

2006-11-21

A spherical neutron generator is formed with a small spherical target and a spherical shell RF-driven plasma ion source surrounding the target. A deuterium (or deuterium and tritium) ion plasma is produced by RF excitation in the plasma ion source using an RF antenna. The plasma generation region is a spherical shell between an outer chamber and an inner extraction electrode. A spherical neutron generating target is at the center of the chamber and is biased negatively with respect to the extraction electrode which contains many holes. Ions passing through the holes in the extraction electrode are focused onto the target which produces neutrons by D-D or D-T reactions.

Experimental Study of RF Sheaths due to Shear Alfv'en Waves in the LAPD

NASA Astrophysics Data System (ADS)

Martin, Michael; van Compernolle, Bart; Carter, Troy; Gekelman, Walter; Pribyl, Patrick; D'Ippolito, Daniel A.; Myra, James R.

2012-10-01

Ion cyclotron resonance frequency (ICRF) heating is an important tool in current fusion experiments and will be an essential part of the heating power in ITER. A current limitation of ICRF heating is impurity generation through the formation of radiofrequency (RF) sheaths, both near-field (at the antenna) and far-field (e.g. in the divertor region). Far-field sheaths are thought to be generated through the direct launch of or mode conversion to shear Alfv'en waves. Shear Alfv'en waves have an electric field component parallel to the background magnetic field near the wall that drives an RF sheath.footnotetextD. A. D'Ippolito and J. R. Myra, Phys. Plasmas 19, 034504 (2012) In this study we directly launch the shear Alfv'en wave and measure the plasma potential oscillations and DC potential in the bulk plasma of the LAPD using emissive and Langmuir probes. Measured changes in the DC plasma potential can serve as an indirect measurement of the formation of an RF sheath because of rectification. These measurements will be useful in guiding future experiments to measure the plasma potential profile inside RF sheaths as part of an ongoing campaign.

Far-Field RF Sheaths due to Shear Alfvén Waves in the LAPD

NASA Astrophysics Data System (ADS)

Martin, Michael; van Compernolle, Bart; Gekelman, Walter; Pribyl, Pat; Carter, Troy; D'Ippolito, Daniel A.; Myra, James R.

2013-10-01

Ion cyclotron resonance heating (ICRH) is an important tool in current fusion experiments and will be an essential heating component in ITER. ICRH could be limited by deleterious effects due to the formation of radio frequency (RF) sheaths in the near-field (at the antenna) and in the far-field (e.g. in the divertor region). Far-field sheaths are thought to be caused by the direct launch of or mode conversion to a shear Alfvén wave with an electric field component parallel to the background magnetic field at the wall. In this experiment a limiter plate was inserted into a cylindrical plasma in the LAPD (ne ~ 1010-11 cm-3, Te ~ 5 eV, B0 = 1.2 kG) and RF sheaths were created by directly launching the shear Alfven wave. Plasma potential measurements were made with an emissive probe. DC plasma potential rectification was observed along field lines connected to the plate, serving as an indirect measure of RF sheath formation. 2-D maps of plasma properties and rectified plasma potential will be presented. This research is part of an ongoing campaign to study the formation and structure of RF sheaths.

Plasma etching of superconducting Niobium tips for scanning tunneling microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roychowdhury, A.; Center for Nanophysics and Advanced Materials, Department of Physics, University of Maryland, College Park, Maryland 20742; Dana, R.

We have developed a reproducible technique for the fabrication of sharp superconducting Nb tips for scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. Sections of Nb wire with 250 μm diameter are dry etched in an SF₆ plasma in a Reactive Ion Etcher. The gas pressure, etching time, and applied power are chosen to control the ratio of isotropic to anisotropic etch rates and produce the desired tip shape. The resulting tips are atomically sharp, with radii of less than 100 nm, mechanically stable, and superconducting. They generate good STM images and spectroscopy on single crystal samples of Au(111), Au(100),more » and Nb(100), as well as a doped topological insulator Bi₂Se₃ at temperatures ranging from 30 mK to 9 K.« less

Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

NASA Astrophysics Data System (ADS)

Corbella, C.; Rubio-Roy, M.; Bertran, E.; Portal, S.; Pascual, E.; Polo, M. C.; Andújar, J. L.

2011-02-01

The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH4) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer

NASA Astrophysics Data System (ADS)

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, Nosoung; Ko, Heung Cho; Jung, Gun Young

2015-08-01

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr02786a

Recovery of GaN surface after reactive ion etching

NASA Astrophysics Data System (ADS)

Fan, Qian; Chevtchenko, S.; Ni, Xianfeng; Cho, Sang-Jun; Morko, Hadis

2006-02-01

Surface properties of GaN subjected to reactive ion etching and the impact on device performance have been investigated by surface potential, optical and electrical measurements. Different etching conditions were studied and essentially high power levels and low chamber pressures resulted in higher etch rates accompanying with the roughening of the surface morphology. Surface potential for the as-grown c-plane GaN was found to be in the range of 0.5~0.7 V using Scanning Kevin Probe Microscopy. However, after reactive ion etching at a power level of 300 W, it decreased to 0.1~0.2 V. A nearly linear reduction was observed on c-plane GaN with increasing power. The nonpolar a-plane GaN samples also showed large surface band bending before and after etching. Additionally, the intensity of the near band-edge photoluminescence decreased and the free carrier density increased after etching. These results suggest that the changes in the surface potential may originate from the formation of possible nitrogen vacancies and other surface oriented defects and adsorbates. To recover the etched surface, N II plasma, rapid thermal annealing, and etching in wet KOH were performed. For each of these methods, the surface potential was found to increase by 0.1~0.3 V, also the reverse leakage current in Schottky diodes fabricated on treated samples was reduced considerably compared with as-etched samples, which implies a partial-to-complete recovery from the plasma-induced damage.

Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina

NASA Astrophysics Data System (ADS)

Ozaki, Yuki; Ito, Shunya; Hiroshiba, Nobuya; Nakamura, Takahiro; Nakagawa, Masaru

2018-06-01

By scanning transmission electron microscopy and energy dispersive X-ray spectroscopy (STEM–EDS), we investigated the elemental depth profiles of organic electron beam resist films after the sequential infiltration synthesis (SIS) of inorganic alumina. Although a 40-nm-thick poly(methyl methacrylate) (PMMA) film was entirely hybridized with alumina, an uneven distribution was observed near the interface between the substrate and the resist as well as near the resist surface. The uneven distribution was observed around the center of a 100-nm-thick PMMA film. The thicknesses of the PMMA and CSAR62 resist films decreased almost linearly as functions of plasma etching period. The comparison of etching rate among oxygen reactive ion etching, C3F8 reactive ion beam etching (RIBE), and Ar ion beam milling suggested that the SIS treatment enhanced the etching resistance of the electron beam resists to chemical reactions rather than to ion collisions. We proposed oxygen- and Ar-assisted C3F8 RIBE for the fabrication of silica imprint molds by electron beam lithography.

Investigation of the flatband voltage (V(FB)) shift of Al2O3 on N2 plasma treated Si substrate.

PubMed

Kim, Hyungchul; Lee, Jaesang; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2013-09-01

The relationships between the physical and electrical characteristics of films treated with N2 plasma followed by forming gas annealing (FGA) were investigated. The Si substrates were treated with various radio frequency (RF) power levels under a N2 ambient. Al2O3 films were then deposited on Si substrates via remote plasma atomic-layer deposition. The plasma characteristics, such as the radical and ion density, were investigated using optical emission spectroscopy. Through X-ray photoelectron spectroscopy, the chemical-bonding configurations of the samples treated with N2 plasma and FGA were examined. The quantity of Si-N bonds increased as the RF power was increased, and Si--O--N bonds were generated after FGA. The flatband voltage (VFB) was shifted in the negative direction with increasing RF power, but the VFB values of the samples after FGA shifted in the positive direction due to the formation of Si--O--N bonds. N2 plasma treatment with various RF power levels slightly increased the leakage current due to the generation of defect sites.

Investigation of the helicon discharge plasma parameters in a hybrid RF plasma system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleksandrov, A. F.; Petrov, A. K., E-mail: alpetrov57@gmail.com; Vavilin, K. V.

2016-03-15

Results of an experimental study of the helicon discharge plasma parameters in a prototype of a hybrid RF plasma system equipped with a solenoidal antenna are described. It is shown that an increase in the external magnetic field leads to the formation of a plasma column and a shift of the maximum ion current along the discharge axis toward the bottom flange of the system. The shape of the plasma column can be controlled via varying the configuration of the magnetic field.

rf power system for thrust measurements of a helicon plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kieckhafer, Alexander W.; Walker, Mitchell L. R.

2010-07-15

A rf power system has been developed, which allows the use of rf plasma devices in an electric propulsion test facility without excessive noise pollution in thruster diagnostics. Of particular importance are thrust stand measurements, which were previously impossible due to noise. Three major changes were made to the rf power system: first, the cable connection was changed from a balanced transmission line to an unbalanced coaxial line. Second, the rf power cabinet was placed remotely in order to reduce vibration-induced noise in the thrust stand. Finally, a relationship between transmission line length and rf was developed, which allows goodmore » transmission of rf power from the matching network to the helicon antenna. The modified system was tested on a thrust measurement stand and showed that rf power has no statistically significant contribution to the thrust stand measurement.« less

Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

DTIC Science & Technology

2015-03-26

THIN - FILM - TRANSISTORS THESIS Thomas M. Donigan, First Lieutenant, USAF AFIT-ENG-MS-15-M-027 DEPARTMENT OF THE AIR FORCE AIR UNIVERSITY AIR...DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS THESIS Presented to the Faculty Department of Electrical and...15-M-027 SUBTRACTIVE PLASMA-ASSISTED-ETCH PROCESS FOR DEVELOPING HIGH PERFORMANCE NANOCRYSTALLINE ZINC-OXIDE THIN - FILM - TRANSISTORS

RF assisted Glow Discharge Condition experiment for SST-1 Tokamak

NASA Astrophysics Data System (ADS)

Raval, Dilip; Khan, Ziauddin; George, Siju; Dhanani, Kalpeshkumar R.; Paravastu, Yuvakiran; Semwal, Pratibha; Thankey, Prashant; Shoaib Khan, Mohammad; Kakati, Bharat; Pradhan, Subrata

2017-04-01

Impurity control reduces the radiation loss from plasma and hence enhances the plasma operation. Oxygen and water vapors are the most common impurities in tokamak devices. Water vapour can be reduced with extensive baking while in order to have a significant reduction in oxygen it is necessary to use glow discharge condition (GDC). RF assisted glow discharge cleaning system will be implemented to remove low z impurities at PFC installed SST-1 vacuum vessel. A RF assisted Glow discharge conditioning is studied at laboratory to find the optimum operating parameters in a view to implement at SST-1 tokamak. Helium is used as a fuel gas in the present experiment. It is observed that the ultimate impurity level is reduced significantly below to the accepted level for plasma operation after RF assisted GDC. The experimental findings of RF assisted Glow discharge conditioning is discussed in details in this paper.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Oehrlein, Gottlieb S., E-mail: oehrlein@umd.edu; Li, Chen

The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and comparedmore » to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.« less

Iterative Methods to Solve Linear RF Fields in Hot Plasma

NASA Astrophysics Data System (ADS)

Spencer, Joseph; Svidzinski, Vladimir; Evstatiev, Evstati; Galkin, Sergei; Kim, Jin-Soo

2014-10-01

Most magnetic plasma confinement devices use radio frequency (RF) waves for current drive and/or heating. Numerical modeling of RF fields is an important part of performance analysis of such devices and a predictive tool aiding design and development of future devices. Prior attempts at this modeling have mostly used direct solvers to solve the formulated linear equations. Full wave modeling of RF fields in hot plasma with 3D nonuniformities is mostly prohibited, with memory demands of a direct solver placing a significant limitation on spatial resolution. Iterative methods can significantly increase spatial resolution. We explore the feasibility of using iterative methods in 3D full wave modeling. The linear wave equation is formulated using two approaches: for cold plasmas the local cold plasma dielectric tensor is used (resolving resonances by particle collisions), while for hot plasmas the conductivity kernel (which includes a nonlocal dielectric response) is calculated by integrating along test particle orbits. The wave equation is discretized using a finite difference approach. The initial guess is important in iterative methods, and we examine different initial guesses including the solution to the cold plasma wave equation. Work is supported by the U.S. DOE SBIR program.

Saddle antenna radio frequency ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dudnikov, V., E-mail: vadim@muonsinc.com; Johnson, R.; Murray, S.

Existing RF ion sources for accelerators have specific efficiencies for H{sup +} and H{sup −} ion generation ∼3–5 mA/cm{sup 2} kW, where about 50 kW of RF power is typically needed for 50 mA beam current production. The Saddle Antenna (SA) surface plasma source (SPS) described here was developed to improve H{sup −} ion production efficiency, reliability, and availability. In SA RF ion source, the efficiency of positive ion generation in the plasma has been improved to 200 mA/cm{sup 2} kW. After cesiation, the current of negative ions to the collector was increased from 1 mA to 10 mA withmore » RF power ∼1.5 kW in the plasma (6 mm diameter emission aperture) and up to 30 mA with ∼4 kW RF. Continuous wave (CW) operation of the SA SPS has been tested on the test stand. The general design of the CW SA SPS is based on the pulsed version. Some modifications were made to improve the cooling and cesiation stability. CW operation with negative ion extraction was tested with RF power up to ∼1.2 kW in the plasma with production up to Ic = 7 mA. A stable long time generation of H{sup −} beam without degradation was demonstrated in RF discharge with AlN discharge chamber.« less

Coupling extended magnetohydrodynamic fluid codes with radiofrequency ray tracing codes for fusion modeling

NASA Astrophysics Data System (ADS)

Jenkins, Thomas G.; Held, Eric D.

2015-09-01

Neoclassical tearing modes are macroscopic (L ∼ 1 m) instabilities in magnetic fusion experiments; if unchecked, these modes degrade plasma performance and may catastrophically destroy plasma confinement by inducing a disruption. Fortunately, the use of properly tuned and directed radiofrequency waves (λ ∼ 1 mm) can eliminate these modes. Numerical modeling of this difficult multiscale problem requires the integration of separate mathematical models for each length and time scale (Jenkins and Kruger, 2012 [21]); the extended MHD model captures macroscopic plasma evolution while the RF model tracks the flow and deposition of injected RF power through the evolving plasma profiles. The scale separation enables use of the eikonal (ray-tracing) approximation to model the RF wave propagation. In this work we demonstrate a technique, based on methods of computational geometry, for mapping the ensuing RF data (associated with discrete ray trajectories) onto the finite-element/pseudospectral grid that is used to model the extended MHD physics. In the new representation, the RF data can then be used to construct source terms in the equations of the extended MHD model, enabling quantitative modeling of RF-induced tearing mode stabilization. Though our specific implementation uses the NIMROD extended MHD (Sovinec et al., 2004 [22]) and GENRAY RF (Smirnov et al., 1994 [23]) codes, the approach presented can be applied more generally to any code coupling requiring the mapping of ray tracing data onto Eulerian grids.

An experimental study of phase transitions in a complex plasma

NASA Astrophysics Data System (ADS)

Smith, Bernard Albert Thomas, II

In semiconductor manufacturing, contamination due to particulates significantly decreases the yield and quality of device fabrication, therefore increasing the cost of production. Dust particle clouds can be found in almost all plasma processing environments including both plasma etching devices and in plasma deposition processes. Dust particles suspended within such plasmas will acquire an electric charge from collisions with free electrons in the plasma. If the ratio of inter-particle potential energy to the average kinetic energy is sufficient, the particles will form either a "liquid" structure with short range ordering or a crystalline structure with long range ordering. Otherwise, the dust particle system will remain in a gaseous state. Many experiments have been conducted over the past decade on such complex plasmas to discover the character of the systems formed, but more work is needed to fully understand these structures. This paper describes the processes involved in setting up the CASPER GEC RF Reference Cell and the modifications necessary to examine complex plasmas. Research conducted to characterize the system is outlined to demonstrate that the CASPER Cell behaves as other GEC Cells. In addition, further research performed shows the behavior of the complex plasma system in the CASPER Cell is similar to complex plasmas studied by other groups in this field. Along the way analysis routines developed specifically for this system are described. New research involving polydisperse dust distributions is carried out in the system once the initial characterization is finished. Next, a system to externally vary the DC bias in the CASPER Cell is developed and characterized. Finally, new research conducted to specifically examine how the complex plasma system reacts to a variable DC bias is reported. Specifically, the response of the interparticle spacing to various system parameters (including the external DC bias) is examined. Also, a previously unreported phenomenon, namely layer splitting, is examined.

No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model.

PubMed

Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, Ss; Soballe, K

2013-01-01

Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time.

Antifouling enhancement of polysulfone/TiO2 nanocomposite separation membrane by plasma etching

NASA Astrophysics Data System (ADS)

Chen, Z.; Yin, C.; Wang, S.; Ito, K.; Fu, Q. M.; Deng, Q. R.; Fu, P.; Lin, Z. D.; Zhang, Y.

2017-01-01

A polysulfone/TiO2 nanocomposite membrane was prepared via casting method, followed by the plasma etching of the membrane surface. Doppler broadened energy spectra vs. positron incident energy were employed to elucidate depth profiles of the nanostructure for the as-prepared and treated membranes. The results confirmed that the near-surface of the membrane was modified by the plasma treatment. The antifouling characteristics for the membranes, evaluated using the degradation of Rhodamin B, indicated that the plasma treatment enhances the photo catalytic ability of the membrane, suggesting that more TiO2 nanoparticles are exposed at the membrane surface after the plasma treatment as supported by the positron result.

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weilnboeck, F.; Metzler, D.; Kumar, N.

2011-12-26

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.

Battery-Powered RF Pre-Ionization System for the Caltech Magnetohydrodynamically-Driven Jet Experiment: RF Discharge Properties and MHD-Driven Jet Dynamics

NASA Astrophysics Data System (ADS)

Chaplin, Vernon H.

This thesis describes investigations of two classes of laboratory plasmas with rather different properties: partially ionized low pressure radiofrequency (RF) discharges, and fully ionized high density magnetohydrodynamically (MHD)-driven jets. An RF pre-ionization system was developed to enable neutral gas breakdown at lower pressures and create hotter, faster jets in the Caltech MHD-Driven Jet Experiment. The RF plasma source used a custom pulsed 3 kW 13.56 MHz RF power amplifier that was powered by AA batteries, allowing it to safely float at 4-6 kV with the cathode of the jet experiment. The argon RF discharge equilibrium and transport properties were analyzed, and novel jet dynamics were observed. Although the RF plasma source was conceived as a wave-heated helicon source, scaling measurements and numerical modeling showed that inductive coupling was the dominant energy input mechanism. A one-dimensional time-dependent fluid model was developed to quantitatively explain the expansion of the pre-ionized plasma into the jet experiment chamber. The plasma transitioned from an ionizing phase with depressed neutral emission to a recombining phase with enhanced emission during the course of the experiment, causing fast camera images to be a poor indicator of the density distribution. Under certain conditions, the total visible and infrared brightness and the downstream ion density both increased after the RF power was turned off. The time-dependent emission patterns were used for an indirect measurement of the neutral gas pressure. The low-mass jets formed with the aid of the pre-ionization system were extremely narrow and collimated near the electrodes, with peak density exceeding that of jets created without pre-ionization. The initial neutral gas distribution prior to plasma breakdown was found to be critical in determining the ultimate jet structure. The visible radius of the dense central jet column was several times narrower than the axial current channel radius, suggesting that the outer portion of the jet must have been force free, with the current parallel to the magnetic field. The studies of non-equilibrium flows and plasma self-organization being carried out at Caltech are relevant to astrophysical jets and fusion energy research.

The study of helicon plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miao Tingting; Shang Yong; Graduate University of Chinese Academy of Sciences, Beijing 100049

2010-02-15

Helicon plasma source is known as efficient generator of uniform and high density plasma. A helicon plasma source was developed for investigation of plasma neutralization and plasma lens in the Institute of Modern Physics in China. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high argon plasma density up to 3.9x10{sup 13} cm{sup -3} have been achieved with the Nagoya type III antenna at the conditions of the magnetic intensity of 200 G, working gas pressure of 2.8x10{sup -3} Pa, and rf power of 1200 W with a frequency of 27.12more » MHz. In the experiment, the important phenomena have been found: for a given magnetic induction intensity, the plasma density became greater with the increase in rf power and tended to saturation, and the helicon mode appeared at the rf power between 200 and 400 W.« less

Coupling of RF antennas to large volume helicon plasma

NASA Astrophysics Data System (ADS)

Chang, Lei; Hu, Xinyue; Gao, Lei; Chen, Wei; Wu, Xianming; Sun, Xinfeng; Hu, Ning; Huang, Chongxiang

2018-04-01

Large volume helicon plasma sources are of particular interest for large scale semiconductor processing, high power plasma propulsion and recently plasma-material interaction under fusion conditions. This work is devoted to studying the coupling of four typical RF antennas to helicon plasma with infinite length and diameter of 0.5 m, and exploring its frequency dependence in the range of 13.56-70 MHz for coupling optimization. It is found that loop antenna is more efficient than half helix, Boswell and Nagoya III antennas for power absorption; radially parabolic density profile overwhelms Gaussian density profile in terms of antenna coupling for low-density plasma, but the superiority reverses for high-density plasma. Increasing the driving frequency results in power absorption more near plasma edge, but the overall power absorption increases with frequency. Perpendicular stream plots of wave magnetic field, wave electric field and perturbed current are also presented. This work can serve as an important reference for the experimental design of large volume helicon plasma source with high RF power.

Development progresses of radio frequency ion source for neutral beam injector in fusion devices.

PubMed

Chang, D H; Jeong, S H; Kim, T S; Park, M; Lee, K W; In, S R

2014-02-01

A large-area RF (radio frequency)-driven ion source is being developed in Germany for the heating and current drive of an ITER device. Negative hydrogen ion sources are the major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen (deuterium) ions have been successfully developed for the neutral beam heating systems at IPP (Max-Planck-Institute for Plasma Physics) in Germany. The first long-pulse ion source has been developed successfully with a magnetic bucket plasma generator including a filament heating structure for the first NBI system of the KSTAR tokamak. There is a development plan for an RF ion source at KAERI to extract the positive ions, which can be applied for the KSTAR NBI system and to extract the negative ions for future fusion devices such as the Fusion Neutron Source and Korea-DEMO. The characteristics of RF-driven plasmas and the uniformity of the plasma parameters in the test-RF ion source were investigated initially using an electrostatic probe.

Initial experiments with a versatile multi-aperture negative-ion source and related improvements

NASA Astrophysics Data System (ADS)

Cavenago, M.

2016-03-01

A relatively compact ion source, named NIO1 (Negative-Ion Optimization 1), with 9 beam apertures for H- extraction is under commissioning, in collaboration between Consorzio RFX and INFN, to provide a test bench for source optimizations, for innovations, and for simulation code validations in support of Neutral Beam Injectors (NBI) optimization. NIO1 installation includes a 60kV high-voltage deck, power supplies for a 130mA ion nominal current, an X-ray shield, and beam diagnostics. Plasma is heated with a tunable 2MHz radiofrequency (rf) generator. Physical aspects of source operation and rf-plasma coupling are discussed. NIO1 tuning procedures and plasma experiments both with air and with hydrogen as filling gas are described, up to a 1.7kW rf power. Transitions to inductively coupled plasma are reported in the case of air (for a rf power of about 0.5kW and a gas pressure below 2Pa), discussing their robust signature in optical emission, and briefly summarized for hydrogen, where more than 1kW rf power is needed.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

Hybrid simulations of solenoidal radio-frequency inductively coupled hydrogen discharges at low pressures

NASA Astrophysics Data System (ADS)

Yang, Wei; Li, Hong; Gao, Fei; Wang, You-Nian

2016-12-01

In this article, we have described a radio-frequency (RF) inductively coupled H2 plasma using a hybrid computational model, incorporating the Maxwell equations and the linear part of the electron Boltzmann equation into global model equations. This report focuses on the effects of RF frequency, gas pressure, and coil current on the spatial profiles of the induced electric field and plasma absorption power density. The plasma parameters, i.e., plasma density, electron temperature, density of negative ion, electronegativity, densities of neutral species, and dissociation degree of H2, as a function of absorption power, are evaluated at different gas pressures. The simulation results show that the utilization efficiency of the RF source characterized by the coupling efficiency of the RF electric field and power to the plasma can be significantly improved at the low RF frequency, gas pressure, and coil current, due to a low plasma density in these cases. The densities of vibrational states of H2 first rapidly increase with increasing absorption power and then tend to saturate. This is because the rapidly increased dissociation degree of H2 with increasing absorption power somewhat suppresses the increase of the vibrational states of H2, thus inhibiting the increase of the H-. The effects of absorption power on the utilization efficiency of the RF source and the production of the vibrational states of H2 should be considered when setting a value of the coil current. To validate the model simulations, the calculated electron density and temperature are compared with experimental measurements, and a reasonable agreement is achieved.

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

NASA Astrophysics Data System (ADS)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

A plasmaless, photochemical etch process for porous organosilicate glass films

NASA Astrophysics Data System (ADS)

Ryan, E. Todd; Molis, Steven E.

2017-12-01

A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

Progress Towards Intersubband Quantum-Box Lasers for Highly Efficient Continuous Wave Operation in the Mid-Infrared

DTIC Science & Technology

2009-01-30

Fig. 7. ECV data for CH4/H2/Ar/Cl2/BCl3 and Cl2/ SiCl4 /Ar plasma etching. Ni < 1010/cm2. Subsequently, it was exposed to RIE...etching in either a CH4/H2/Ar/Cl2/BCl3 or a Cl2/ SiCl4 /Ar gas mixture which have been used to fabricate nanoposts for the IQB structures (see next...Argon +BCl3 as well as Inductive Coupled Plasma (ICP) etching using SiCl4 . Using both methods we were able to obtain 30-40 nm-diameter nanopoles on

Effects of oxygen plasma etching on Sb{sub 2}Te{sub 3} explored by torque detected quantum oscillations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Yuan, E-mail: yuan.yan@pi1.physik.uni-stuttgart.de, E-mail: martin.dressel@pi1.physik.uni-stuttgart.de; Heintze, Eric; Pracht, Uwe S.

2016-04-25

De Haas–van Alphen measurements evidence that oxygen plasma etching strongly affects the properties of the three-dimensional topological insulator Sb{sub 2}Te{sub 3}. The quantum oscillations in magnetization down to low temperature (T ≥ 2 K) and high magnetic field (B ≤ 7 T) have been systematically investigated using a high-sensitive cantilever torque magnetometer. The effective mass and the oscillation frequency obtained from de Haas–van Alphen measurements first increase and then decrease as the oxygen plasma etching time increases from 0 to 12 min, corresponding to an up- and down-shift of the Dirac point. We establish the cantilever torque magnetometer as a powerful contactless tool to investigate themore » oxygen sensitivity of the surface state in topological insulators.« less

Etching Selectivity of Cr, Fe and Ni Masks on Si & SiO2 Wafers

NASA Astrophysics Data System (ADS)

Garcia, Jorge; Lowndes, Douglas H.

2000-10-01

During this Summer 2000 I joined the Semiconductors and Thin Films group led by Dr. Douglas H. Lowndes at Oak Ridge National Laboratory’s Solid State Division. Our objective was to evaluate the selectivity that Trifluoromethane (CHF3), and Sulfur Hexafluoride (SF6) plasmas have for Si, SiO2 wafers and the Ni, Cr, and Fe masks; being this etching selectivity the ratio of the etching rates of the plasmas for each of the materials. We made use of Silicon and Silicon Dioxide-coated wafers that have Fe, Cr or Ni masks. In the semiconductor field, metal layers are often used as masks to protect layers underneath during processing steps; when these wafers are taken to the dry etching process, both the wafer and the mask layers’ thickness are reduced.

Oxygen plasma etching of graphene: A first-principles dynamical inspection of the reaction mechanisms and related activation barriers

NASA Astrophysics Data System (ADS)

Koizumi, Kenichi; Boero, Mauro; Shigeta, Yasuteru; Oshiyama, Atsushi; Dept. of Applied Physics Team; Institute of Physics and Chemistry of Strasbourg (IPCMS) Collaboration; Department Of Materials Engineering Science Collaboration

2013-03-01

Oxygen plasma etching is a crucial step in the fabrication of electronic circuits and has recently received a renovated interest in view of the realization of carbon-based nanodevices. In an attempt at unraveling the atomic-scale details and to provide guidelines for the control of the etching processes mechanisms, we inspected the possible reaction pathways via reactive first principles simulations. These processes involve breaking and formation of several chemical bonds and are characterized by different free-energy barriers. Free-energy sampling techniques (metadynamics and blue moon), used to enhance the standard Car-Parrinello molecular dynamics, provide us a detailed microscopic picture of the etching of graphene surfaces and a comprehensive scenario of the activation barriers involved in the various steps. MEXT, Japan - contract N. 22104005

Anisotropic Etching Using Reactive Cluster Beams

NASA Astrophysics Data System (ADS)

Koike, Kunihiko; Yoshino, Yu; Senoo, Takehiko; Seki, Toshio; Ninomiya, Satoshi; Aoki, Takaaki; Matsuo, Jiro

2010-12-01

The characteristics of Si etching using nonionic cluster beams with highly reactive chlorine-trifluoride (ClF3) gas were examined. An etching rate of 40 µm/min or higher was obtained even at room temperature when a ClF3 molecular cluster was formed and irradiated on a single-crystal Si substrate in high vacuum. The etching selectivity of Si with respect to a photoresist and SiO2 was at least 1:1000. We also succeeded in highly anisotropic etching with an aspect ratio of 10 or higher. Moreover, this etching method has a great advantage of low damage, compared with the conventional plasma process.

Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

NASA Astrophysics Data System (ADS)

Izumi, Shouichiro; Minami, Masaki; Kamada, Michiru; Tatsumi, Tetsuya; Yamaguchi, Atsushi A.; Ishikawa, Kenji; Hori, Masaru; Tomiya, Shigetaka

2013-08-01

Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (˜60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.

Silicon cells made by self-aligned selective-emitter plasma-etchback process

DOEpatents

Ruby, Douglas S.; Schubert, William K.; Gee, James M.; Zaidi, Saleem H.

2000-01-01

Photovoltaic cells and methods for making them are disclosed wherein the metallized grids of the cells are used to mask portions of cell emitter regions to allow selective etching of phosphorus-doped emitter regions. The preferred etchant is SF.sub.6 or a combination of SF.sub.6 and O.sub.2. This self-aligned selective etching allows for enhanced blue response (versus cells with uniform heavy doping of the emitter) while preserving heavier doping in the region beneath the gridlines needed for low contact resistance. Embodiments are disclosed for making cells with or without textured surfaces. Optional steps include plasma hydrogenation and PECVD nitride deposition, each of which are suited to customized applications for requirements of given cells to be manufactured. The techniques disclosed could replace expensive and difficult alignment methodologies used to obtain selectively etched emitters, and they may be easily integrated with existing plasma processing methods and techniques of the invention may be accomplished in a single plasma-processing chamber.

Minimum reaction network necessary to describe Ar/CF4 plasma etch

NASA Astrophysics Data System (ADS)

Helpert, Sofia; Chopra, Meghali; Bonnecaze, Roger T.

2018-03-01

Predicting the etch and deposition profiles created using plasma processes is challenging due to the complexity of plasma discharges and plasma-surface interactions. Volume-averaged global models allow for efficient prediction of important processing parameters and provide a means to quickly determine the effect of a variety of process inputs on the plasma discharge. However, global models are limited based on simplifying assumptions to describe the chemical reaction network. Here a database of 128 reactions is compiled and their corresponding rate constants collected from 24 sources for an Ar/CF4 plasma using the platform RODEo (Recipe Optimization for Deposition and Etching). Six different reaction sets were tested which employed anywhere from 12 to all 128 reactions to evaluate the impact of the reaction database on particle species densities and electron temperature. Because many the reactions used in our database had conflicting rate constants as reported in literature, we also present a method to deal with those uncertainties when constructing the model which includes weighting each reaction rate and filtering outliers. By analyzing the link between a reaction's rate constant and its impact on the predicted plasma densities and electron temperatures, we determine the conditions at which a reaction is deemed necessary to the plasma model. The results of this study provide a foundation for determining which minimal set of reactions must be included in the reaction set of the plasma model.

Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm

NASA Astrophysics Data System (ADS)

Lin, Cheng-ming; Chang, Keh-wen; Lee, Ming-der; Loong, Wen-An

1999-07-01

Abstract-Five materials which are PdSixOy, CrAlxOy, SiNx, TiSixNy, and TiSixOyNz as absorptive shifters for attenuated phase-shifting mask in 193 nm wavelength lithography are presented. PdSixOy films were deposited by dual e-gun evaporation. CrAlxOy, TiSixNy and TiSixOyNz films were formed by plasma sputtering and SiNx films were formed with LPCVD. All of these materials are shown to be capable of achieving 4 percent - 15 percent transmittance in 193 nm with thickness that produce a 180 degrees phase shift. Under BCl3:Cl2 equals 14:70 sccm; chamber pressure 5 mtorr and RF power 1900W, the dry etching selectivity of TiSixNy over DQN positive resist and fused silica, were found to be 2:1 and 4,8:1 respectively. An embedded layer TiSixNy with 0.5 micrometers line/space was successfully patterned.

Er3+ phosphate glass optical waveguide amplifiers at 1.5 μm on silicon

NASA Astrophysics Data System (ADS)

Yan, Yingchao; Faber, Anne J.; de Waal, Henk

1996-01-01

RF-sputtering techniques were employed to produce Er-doped phosphate glass films on thermally oxidized silicon wafers. Film compositions were characterized by X-ray photoelectron spectroscopy. As-deposited films showed very low Er luminescence lifetimes. By postannealing of deposited films in pure oxygen, Er photoluminescence emission lifetime of the 4I13/2 - 4I15/2 transition could be increased from 1 - 2 ms to 8 - 9 ms. The long Er lifetime of the deposited films is very promising for achieving an optical gain. A dependence of measured lifetimes on pump power was observed which are related to a up-conversion quenching process. After postannealing, the sputtered waveguides showed relatively low attenuation loss at the potential pumping and signaling wavelengths. The loss spectrum from 700 nm to 1600 nm was measured by two-prism coupling. The films were easy to be patterned by lithography and ridge channel waveguides were developed by argon plasma etching.

Non-Destructive Testing with Atmospheric Pressure Radio-Frequency Plasma

NASA Astrophysics Data System (ADS)

May, A.; Andarawis, E.

2007-03-01

We summarize our recent work using radio-frequency (RF) atmospheric pressure plasma (APP) for non-destructive evaluation (NDE), specifically for: (1) Clearance sensing (0-5mm) on rotating components, and (2) Generation of broadband ultrasound in air at 900kHz. RF-APP showed potential in both of these common NDE requirements, but further work is required to better characterize and optimize the performance of the new techniques. Application of RF-APP to other NDE disciplines, such as plasma spectroscopy and gas flow measurement, is also likely to be advantageous, especially in harsh environments where existing approaches are prohibitively expensive or complex.

Optimization of process parameters in the RF-DC plasma N2-H2 for AISI420 molds and dies

NASA Astrophysics Data System (ADS)

Herdianto, Hengky; Djoko, D. J.; Santjojo, H.; Masruroh

2017-11-01

The RF-DC plasma N2-H2 was used to make precise AISI420 molds and dies have complex textured geometry. The quality of the molds and dies directly affect the quality of the produced parts. The excellent examples of molds were used for injection molding lenses and dies used for the precision forging of automotive drive train components. In this study, a temperature, DC bias, and duration as process parameters of the RF-DC plasma N2-H2 have been optimized for molds and dies fabrication. The mask-less micro-patterned method was utilized to draw the initial 2D micro patterns directly onto the AISI420 substrate surface. The unprinted substrate surfaces were selectively nitrided by the RF-DC plasma N2-H2 at 673 K for 5400 s by 70 Pa with hollow cathode device. Energy Dispersive X-ray was utilized to describe the nitrogen content distribution at the vicinity of the border between the unprinted surfaces. This exclusive nitrogen mapping proves that only the unprinted parts of the substrate have high content nitrogen solutes. XRD analysis was performed to investigate whether the iron nitrides were precipitated by RF-DC plasma N2-H2 in the AISI420.

RF wave simulation for cold edge plasmas using the MFEM library

NASA Astrophysics Data System (ADS)

Shiraiwa, S.; Wright, J. C.; Bonoli, P. T.; Kolev, T.; Stowell, M.

2017-10-01

A newly developed generic electro-magnetic (EM) simulation tool for modeling RF wave propagation in SOL plasmas is presented. The primary motivation of this development is to extend the domain partitioning approach for incorporating arbitrarily shaped SOL plasmas and antenna to the TORIC core ICRF solver, which was previously demonstrated in the 2D geometry [S. Shiraiwa, et. al., "HISTORIC: extending core ICRF wave simulation to include realistic SOL plasmas", Nucl. Fusion in press], to larger and more complicated simulations by including a 3D realistic antenna and integrating RF rectified sheath potential model. Such an extension requires a scalable high fidelity 3D edge plasma wave simulation. We used the MFEM [http://mfem.org], open source scalable C++ finite element method library, and developed a Python wrapper for MFEM (PyMFEM), and then a radio frequency (RF) wave physics module in Python. This approach allows for building a physics layer rapidly, while separating the physics implementation being apart from the numerical FEM implementation. An interactive modeling interface was built on pScope [S Shiraiwa, et. al. Fusion Eng. Des. 112, 835] to work with an RF simulation model in a complicated geometry.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Operating features of an ion-cyclotron-wave plasma apparatus running in the RF-sustained mode

NASA Technical Reports Server (NTRS)

Swett, C. C.

1972-01-01

An experimental study has been made of an ion-cyclotron-wave apparatus operated in the RF-sustained mode. This is a mode in which the Stix RF coil both propagates the waves and maintains the plasma. Problems associated with this method of operation are presented. Some factors that are important to the coupling of RF power are noted. In general, the wave-propagation and wave-damping data agree with theory. Some irregularities in wave fields are observed. Maximum ion temperature is 870 eV at a density of 5 times 10 to the 12th power per cubic centimeter and RF power of 90 kW. Coupling efficiency is 70 percent.

Modeling of RF/MHD coupling using NIMROD, GENRAY, and the Integrated Plasma Simulator

NASA Astrophysics Data System (ADS)

Jenkins, Thomas; Schnack, D. D.; Sovinec, C. R.; Hegna, C. C.; Callen, J. D.; Ebrahimi, F.; Kruger, S. E.; Carlsson, J.; Held, E. D.; Ji, J.-Y.; Harvey, R. W.; Smirnov, A. P.

2009-05-01

We summarize ongoing theoretical/numerical work relevant to the development of a self--consistent framework for the inclusion of RF effects in fluid simulations; specifically considering resistive tearing mode stabilization in tokamak (DIII--D--like) geometry via ECCD. Relatively simple (though non--self--consistent) models for the RF--induced currents are incorporated into the fluid equations, markedly reducing the width of the nonlinearly saturated magnetic islands generated by tearing modes. We report our progress toward the self--consistent modeling of these RF--induced currents. The initial interfacing of the NIMROD* code with the GENRAY/CQL3D** codes (calculating RF propagation and energy/momentum deposition) via the Integrated Plasma Simulator (IPS) framework*** is explained, equilibration of RF--induced currents over the plasma flux surfaces is investigated, and studies exploring the efficient reduction of saturated island widths through time modulation and spatial localization of the ECCD are presented. *[Sovinec et al., JCP 195, 355 (2004)] **[www.compxco.com] ***[This research and the IPS development are both part of the SWIM project. Funded by U.S. DoE.

Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

NASA Astrophysics Data System (ADS)

Landesman, Jean-Pierre; Cassidy, Daniel T.; Fouchier, Marc; Pargon, Erwine; Levallois, Christophe; Mokhtari, Merwan; Jimenez, Juan; Torres, Alfredo

2018-02-01

We investigated the crystal lattice deformation that can occur during the etching of structures in bulk InP using SiNx hard masks with Ar/Cl2/CH4 chemistries in an inductively coupled plasma reactor. Two techniques were used: degree of polarization (DOP) of the photo-luminescence, which gives information on the state of mechanical stress present in the structures, and spectrally resolved cathodo-luminescence (CL) mapping. This second technique also provides elements on the mechanical stress in the samples through analysis of the spectral shift of the CL intrinsic emission lines. Preliminary DOP mapping experiments have been conducted on the SiNx hard mask patterns without etching the underlying InP. This preliminary study demonstrated the potential of DOP to map mechanical stress quantitatively in the structures. In a second step, InP patterns with various widths between 1 μm and 20 μm, and various depths between 1 μm and 6 μm, were analyzed by the 2 techniques. DOP measurements were made both on the (100) top surface of the samples and on the (110) cleaved cross section. CL measurements were made only from the (100) surface. We observed that inside the etched features, close to the vertical etched walls, there is always some compressive deformation, while it is tensile just outside the etched features. The magnitude of these effects depends on the lateral and depth dimensions of the etched structures, and on the separation between them (the tensile deformation increases between them due to some kind of proximity effect when separation decreases).

Electrostatic sensors for SPIDER experiment: Design, manufacture of prototypes, and first tests

NASA Astrophysics Data System (ADS)

Brombin, M.; Spolaore, M.; Serianni, G.; Barzon, A.; Franchin, L.; Pasqualotto, R.; Pomaro, N.; Schiesko, L.; Taliercio, C.; Trevisan, L.

2014-02-01

A system of electrostatic sensors has been designed for the SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) experiment, prototype RF source of the ITER NBI (neutral beam injection). A prototype of the sensor system was manufactured and tested at the BATMAN (BAvarian Test MAchine for Negative ions) facility, where the plasma environment is similar to that of SPIDER. Different aspects concerning the mechanical manufacturing and the signal conditioning are presented, among them the RF compensation adopted to reduce the RF effects which could lead to overestimated values of the electron temperature. The first commissioning tests provided ion saturation current values in the range assumed for the design, so the deduced plasma density estimate is consistent with the expected values.

Electrostatic sensors for SPIDER experiment: design, manufacture of prototypes, and first tests.

PubMed

Brombin, M; Spolaore, M; Serianni, G; Barzon, A; Franchin, L; Pasqualotto, R; Pomaro, N; Schiesko, L; Taliercio, C; Trevisan, L

2014-02-01

A system of electrostatic sensors has been designed for the SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) experiment, prototype RF source of the ITER NBI (neutral beam injection). A prototype of the sensor system was manufactured and tested at the BATMAN (BAvarian Test MAchine for Negative ions) facility, where the plasma environment is similar to that of SPIDER. Different aspects concerning the mechanical manufacturing and the signal conditioning are presented, among them the RF compensation adopted to reduce the RF effects which could lead to overestimated values of the electron temperature. The first commissioning tests provided ion saturation current values in the range assumed for the design, so the deduced plasma density estimate is consistent with the expected values.

Electrostatic sensors for SPIDER experiment: Design, manufacture of prototypes, and first tests

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brombin, M., E-mail: matteo.brombin@igi.cnr.it; Spolaore, M.; Serianni, G.

2014-02-15

A system of electrostatic sensors has been designed for the SPIDER (Source for the production of Ions of Deuterium Extracted from RF plasma) experiment, prototype RF source of the ITER NBI (neutral beam injection). A prototype of the sensor system was manufactured and tested at the BATMAN (BAvarian Test MAchine for Negative ions) facility, where the plasma environment is similar to that of SPIDER. Different aspects concerning the mechanical manufacturing and the signal conditioning are presented, among them the RF compensation adopted to reduce the RF effects which could lead to overestimated values of the electron temperature. The first commissioningmore » tests provided ion saturation current values in the range assumed for the design, so the deduced plasma density estimate is consistent with the expected values.« less

Ways to improve the efficiency and reliability of radio frequency driven negative ion sources for fusion.

PubMed

Kraus, W; Briefi, S; Fantz, U; Gutmann, P; Doerfler, J

2014-02-01

Large RF driven negative hydrogen ion sources are being developed at IPP Garching for the future neutral beam injection system of ITER. The overall power efficiency of these sources is low, because for the RF power supply self-excited generators are utilized and the plasma is generated in small cylindrical sources ("drivers") and expands into the source main volume. At IPP experiments to reduce the primary power and the RF power required for the plasma production are performed in two ways: The oscillator generator of the prototype source has been replaced by a transistorized RF transmitter and two alternative driver concepts, a spiral coil, in which the field is concentrated by ferrites, which omits the losses by plasma expansion and a helicon source are being tested.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yue, Mengyao; Zhou, Baoming; Jiao, Kunyan

A switchable surface that promotes either hydrophobic or hydrophilic wettability of poly (L-lactide) (PLLA) microfibrous membranes is obtained by CF₄ microwave plasma treatment in this paper. The results indicated that both etching and grafting process occurred during the CF₄ plasma treatment and these two factors synergistically affected the final surface wettability of PLLA membranes. When plasma treatment was taken under a relatively low power, the surface wettability of PLLA membranes turned from hydrophobic to hydrophilic. Especially when CF₄ plasma treatment was taken under 100 W for 10 min and 150 W for 5 min, the water contact angle sharply decreasedmore » from 116 ± 3.0° to ~0°. According to Field-emission scanning electron microscopy (FESEM) results, the PLLA fibers were notably etched by CF₄ plasma treatment. Combined with the X-ray photoelectron spectroscopy (XPS) measurements, only a few fluorine-containing groups were grafted onto the surface, so the etching effect directly affected the surface wettability of PLLA membranes in low plasma power condition. However, with the plasma power increasing to 200 W, the PLLA membrane surface turned to hydrophobic again. In contrast, the morphology changes of PLLA fiber surfaces were not obvious while a large number of fluorine-containing groups grafted onto the surface. So the grafting effect gradually became the major factor for the final surface wettability.« less

Treatment Characteristics of Polysaccharides and Endotoxin Using Oxygen Plasma Produced by RF Discharge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kitazaki, Satoshi; Hayashi, Nobuya; Goto, Masaaki

Treatment of polysaccharides and endotoxin were attempted using oxygen plasma produced by RF discharge. Oxygen radicals observed by optical light emission spectra are factors of decomposition of polysaccharides and endotoxin. Fourier transform infrared spectra indicate that most of chemical bonds in the polysaccharides are dissociated after irradiation of the oxygen plasma. Also, the decomposition rate of endotoxin was approximately 90% after irradiation of the oxygen plasma for 180 min.

Treatment Characteristics of Polysaccharides and Endotoxin Using Oxygen Plasma Produced by RF Discharge

NASA Astrophysics Data System (ADS)

Kitazaki, Satoshi; Hayashi, Nobuya; Goto, Masaaki

2010-10-01

Treatment of polysaccharides and endotoxin were attempted using oxygen plasma produced by RF discharge. Oxygen radicals observed by optical light emission spectra are factors of decomposition of polysaccharides and endotoxin. Fourier transform infrared spectra indicate that most of chemical bonds in the polysaccharides are dissociated after irradiation of the oxygen plasma. Also, the decomposition rate of endotoxin was approximately 90% after irradiation of the oxygen plasma for 180 min.

Surface plasma source with saddle antenna radio frequency plasma generator.

PubMed

Dudnikov, V; Johnson, R P; Murray, S; Pennisi, T; Piller, C; Santana, M; Stockli, M; Welton, R

2012-02-01

A prototype RF H(-) surface plasma source (SPS) with saddle (SA) RF antenna is developed which will provide better power efficiency for high pulsed and average current, higher brightness with longer lifetime and higher reliability. Several versions of new plasma generators with small AlN discharge chambers and different antennas and magnetic field configurations were tested in the plasma source test stand. A prototype SA SPS was installed in the Spallation Neutron Source (SNS) ion source test stand with a larger, normal-sized SNS AlN chamber that achieved unanalyzed peak currents of up to 67 mA with an apparent efficiency up to 1.6 mA∕kW. Control experiments with H(-) beam produced by SNS SPS with internal and external antennas were conducted. A new version of the RF triggering plasma gun has been designed. A saddle antenna SPS with water cooling is fabricated for high duty factor testing.

A high power, high density helicon discharge for the plasma wakefield accelerator experiment AWAKE

NASA Astrophysics Data System (ADS)

Buttenschön, B.; Fahrenkamp, N.; Grulke, O.

2018-07-01

A plasma cell prototype for the plasma wakefield accelerator experiment AWAKE based on a helicon discharge is presented. In the 1 m long prototype module a multiple antenna helicon discharge with an rf power density of 100 MW m‑3 is established. Based on the helicon dispersion relation, a linear scaling of plasma density with magnetic field is observed for rf frequencies above the lower hybrid frequency, ω LH ≤ 0.8ω rf. Density profiles are highest on the device axis and show shallow radial gradients, thus providing a relatively constant plasma density in the center over a radial range of Δr ≈ 10 mm with less than 10% variation. Peak plasma densities up to 7 × 1020 m‑3 are transiently achieved with a reproducibility that is sufficient for AWAKE. The results are in good agreement with power balance calculations.

Investigation of surface boundary conditions for continuum modeling of RF plasmas

NASA Astrophysics Data System (ADS)

Wilson, A.; Shotorban, B.

2018-05-01

This work was motivated by a lacking general consensus in the exact form of the boundary conditions (BCs) required on the solid surfaces for the continuum modeling of Radiofrequency (RF) plasmas. Various kinds of number and energy density BCs on solid surfaces were surveyed, and how they interacted with the electric potential BC to affect the plasma was examined in two fundamental RF plasma reactor configurations. A second-order local mean energy approximation with equations governing the electron and ion number densities and the electron energy density was used to model the plasmas. Zero densities and various combinations of drift, diffusion, and thermal fluxes were considered to set up BCs. It was shown that the choice of BC can have a significant impact on the sheath and bulk plasma. The thermal and diffusion fluxes to the surface were found to be important. A pure drift BC for dielectric walls failed to produce a sheath.

First results of coupled IPS/NIMROD/GENRAY simulations

NASA Astrophysics Data System (ADS)

Jenkins, Thomas; Kruger, S. E.; Held, E. D.; Harvey, R. W.; Elwasif, W. R.; Schnack, D. D.

2010-11-01

The Integrated Plasma Simulator (IPS) framework, developed by the SWIM Project Team, facilitates self-consistent simulations of complicated plasma behavior via the coupling of various codes modeling different spatial/temporal scales in the plasma. Here, we apply this capability to investigate the stabilization of tearing modes by ECCD. Under IPS control, the NIMROD code (MHD) evolves fluid equations to model bulk plasma behavior, while the GENRAY code (RF) calculates the self-consistent propagation and deposition of RF power in the resulting plasma profiles. GENRAY data is then used to construct moments of the quasilinear diffusion tensor (induced by the RF) which influence the dynamics of momentum/energy evolution in NIMROD's equations. We present initial results from these coupled simulations and demonstrate that they correctly capture the physics of magnetic island stabilization [Jenkins et al, PoP 17, 012502 (2010)] in the low-beta limit. We also discuss the process of code verification in these simulations, demonstrating good agreement between NIMROD and GENRAY predictions for the flux-surface-averaged, RF-induced currents. An overview of ongoing model development (synthetic diagnostics/plasma control systems; neoclassical effects; etc.) is also presented. Funded by US DoE.

Production of high-density highly-ionized helicon plasmas in the ProtoMPEX

NASA Astrophysics Data System (ADS)

Caneses, J. F.; Kafle, N.; Showers, M.; Goulding, R. H.; Biewer, T. M.; Caughman, J. B. O.; Bigelow, T.; Rapp, J.

2017-10-01

High-density (2-6e19 m-3) Deuterium helicon plasmas in the ProtoMPEX have been produced that successfully use differential pumping to produce neutral gas pressures suitable for testing the RF electron and ion heating concepts. To minimize collisional losses when heating electrons and ions, plasmas with very low neutral gas content (<< 0.1 Pa) in the heating sections are required. This requirement is typically not compatible with the neutral gas pressures (1-2 Pa) commonly used in high-density light-ion helicon sources. By using skimmers, a suitable gas injection scheme and long duration discharges (>0.3 s), high-density plasmas with very low neutral gas pressures (<< 0.1 Pa) in the RF heating sections have been produced. Measurements indicate the presence of a highly-ionized plasma column and that discharges lasting at least 0.3 s are required to significantly reduce the neutral gas pressure in the RF heating sections to levels suitable for investigating electron/ion RF heating concepts in this linear configuration. This work was supported by the US. D.O.E. contract DE-AC05-00OR22725.

The influence of surface properties of plasma-etched polydimethylsiloxane (PDMS) on cell growth and morphology.

PubMed

Pennisi, Cristian P; Zachar, Vladimir; Gurevich, Leonid; Patriciu, Andrei; Struijk, Johannes J

2010-01-01

Polydimethylsiloxane (PDMS) or silicone rubber is a widely used implant material. Approaches to promote tissue integration to PDMS are desirable to avoid clinical problems associated with sliding and friction between tissue and implant. Plasma-etching is a useful way to control cell behavior on PDMS without additional coatings. In this work, different plasma processing conditions were used to modify the surface properties of PDMS substrates. Surface nanotopography and wettability were measured to study their effect on in vitro growth and morphology of fibroblasts. While fluorinated plasma treatments produced nanorough hydrophobic and superhydrophobic surfaces that had negative or little influences on cellular behavior, water vapor/oxygen plasma produced smooth hydrophillic surfaces that enhanced cell growth.

A tunable sub-100 nm silicon nanopore array with an AAO membrane mask: reducing unwanted surface etching by introducing a PMMA interlayer.

PubMed

Lim, Namsoo; Pak, Yusin; Kim, Jin Tae; Hwang, Youngkyu; Lee, Ryeri; Kumaresan, Yogeenth; Myoung, NoSoung; Ko, Heung Cho; Jung, Gun Young

2015-08-28

Highly ordered silicon (Si) nanopores with a tunable sub-100 nm diameter were fabricated by a CF4 plasma etching process using an anodic aluminum oxide (AAO) membrane as an etching mask. To enhance the conformal contact of the AAO membrane mask to the underlying Si substrate, poly(methyl methacrylate) (PMMA) was spin-coated on top of the Si substrate prior to the transfer of the AAO membrane. The AAO membrane mask was fabricated by two-step anodization and subsequent removal of the aluminum support and the barrier layer, which was then transferred to the PMMA-coated Si substrate. Contact printing was performed on the sample with a pressure of 50 psi and a temperature of 120 °C to make a conformal contact of the AAO membrane mask to the Si substrate. The CF4 plasma etching was conducted to transfer nanopores onto the Si substrate through the PMMA interlayer. The introduced PMMA interlayer prevented unwanted surface etching of the Si substrate by eliminating the etching ions and radicals bouncing at the gap between the mask and the substrate, resulting in a smooth Si nanopore array.

Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

NASA Astrophysics Data System (ADS)

Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

2006-01-01

In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik; Li, Chen; Engelmann, Sebastian

With the increasing interest in establishing directional etching methods capable of atomic scale resolution for fabricating highly scaled electronic devices, the need for development and characterization of atomic layer etching (ALE) processes, or generally etch processes with atomic layer precision, is growing. In this work, a flux-controlled cyclic plasma process is used for etching of SiO 2 and Si at the Angstrom-level. This is based on steady-state Ar plasma, with periodic, precise injection of a fluorocarbon (FC) precursor (C 4F 8 and CHF 3), and synchronized, plasma-based Ar+ ion bombardment [D. Metzler et al., J Vac Sci Technol A 32,more » 020603 (2014), and D. Metzler et al., J Vac Sci Technol A 34, 01B101 (2016)]. For low energy Ar+ ion bombardment conditions, physical sputter rates are minimized, whereas material can be etched when FC reactants are present at the surface. This cyclic approach offers a large parameter space for process optimization. Etch depth per cycle, removal rates, and self-limitation of removal, along with material dependence of these aspects, were examined as a function of FC surface coverage, ion energy, and etch step length using in situ real time ellipsometry. The deposited FC thickness per cycle is found to have a strong impact on etch depth per cycle of SiO 2 and Si, but is limited with regard to control over material etching selectivity. Ion energy over the 20 to 30 eV range strongly impacts material selectivity. The choice of precursor can have a significant impact on the surface chemistry and chemically enhanced etching. CHF 3 has a lower FC deposition yield for both SiO 2 and Si, and also exhibits a strong substrate dependence of FC deposition yield, in contrast to C4F 8. The thickness of deposited FC layers using CHF 3 is found to be greater for Si than for SiO 2. X-ray photoelectron spectroscopy was used to study surface chemistry. When thicker FC films of 11 Å are employed, strong changes of FC film chemistry during a cycle are seen whereas the chemical state of the substrate varies much less. On the other hand, for FC film deposition of 5 Å for each cycle, strong substrate surface chemical changes are seen during an etching cycle. The nature of this cyclic etching with periodic deposition of thin FC films differs significantly from conventional etching with steady-state FC layers since surface conditions change strongly throughout each cycle.« less

Fast wave experiments in LAPD: RF sheaths, convective cells and density modifications

NASA Astrophysics Data System (ADS)

Carter, T. A.; van Compernolle, B.; Martin, M.; Gekelman, W.; Pribyl, P.; van Eester, D.; Crombe, K.; Perkins, R.; Lau, C.; Martin, E.; Caughman, J.; Tripathi, S. K. P.; Vincena, S.

2017-10-01

An overview is presented of recent work on ICRF physics at the Large Plasma Device (LAPD) at UCLA. The LAPD has typical plasma parameters ne 1012 -1013 cm-3, Te 1 - 10 eV and B 1000 G. A new high-power ( 150 kW) RF system and fast wave antenna have been developed for LAPD. The source runs at a frequency of 2.4 MHz, corresponding to 1 - 7fci , depending on plasma parameters. Evidence of rectified RF sheaths is seen in large increases ( 10Te) in the plasma potential on field lines connected to the antenna. The rectified potential scales linearly with antenna current. The rectified RF sheaths set up convective cells of local E × B flows, measured indirectly by potential measurements, and measured directly with Mach probes. At high antenna powers substantial modifications of the density profile were observed. The plasma density profile initially exhibits transient low frequency oscillations (10 kHz). The amplitude of the fast wave fields in the core plasma is modulated at the same low frequency, suggesting fast wave coupling is affected by the density rearrangement. Work performed at the Basic Plasma Science Facility, supported jointly by the National Science Foundation and the Department of Energy.

Fabrication and Characterization of Thermoresponsive Films Deposited by an RF Plasma Reactor

PubMed Central

Lucero, Adrianne E.; Reed, Jamie A.; Wu, Xiaomei; Canavan, Heather E.

2014-01-01

Summary Poly(N-isopropyl acrylamide) (pNIPAM) undergoes a sharp property change in response to a moderate thermal stimulus at physiological temperatures. In this work, we constructed a radio frequency (RF) plasma reactor for the plasma polymerization of pNIPAM. RF deposition is a method that coats surfaces of any geometry producing surfaces that are sterile and uniform, making this technique useful for forming biocompatible films. The films generated are characterized using X-ray photoelectron spectroscopy (XPS), contact angles, cell culture, and interferometry. We find that a plasma with a decreasing series of power settings (i.e., from 100W to 1W) at a pressure of 140 millitorr yields the most favorable results. PMID:24634643

RF plasma modeling of the Linac4 H- ion source

NASA Astrophysics Data System (ADS)

Mattei, S.; Ohta, M.; Hatayama, A.; Lettry, J.; Kawamura, Y.; Yasumoto, M.; Schmitzer, C.

2013-02-01

This study focuses on the modelling of the ICP RF-plasma in the Linac4 H- ion source currently being constructed at CERN. A self-consistent model of the plasma dynamics with the RF electromagnetic field has been developed by a PIC-MCC method. In this paper, the model is applied to the analysis of a low density plasma discharge initiation, with particular interest on the effect of the external magnetic field on the plasma properties, such as wall loss, electron density and electron energy. The employment of a multi-cusp magnetic field effectively limits the wall losses, particularly in the radial direction. Preliminary results however indicate that a reduced heating efficiency results in such a configuration. The effect is possibly due to trapping of electrons in the multi-cusp magnetic field, preventing their continuous acceleration in the azimuthal direction.

Improvement of In-Flight Alumina Spheroidization Process Using a Small Power Argon DC-RF Hybrid Plasma Flow System by Helium Mixture

NASA Astrophysics Data System (ADS)

Takana, Hidemasa; Jang, Juyong; Igawa, Junji; Nakajima, Tomoki; Solonenko, Oleg P.; Nishiyama, Hideya

2011-03-01

For the further improvement of in-flight alumina spheroidization process with a low-power direct-current radiofrequency (DC-RF) hybrid plasma flow system, the effect of a small amount of helium gas mixture in argon main gas and also the effect of increasing DC nozzle diameter on powder spheroidization ratio have been experimentally clarified with correlating helium gas mixture percentage, plasma enthalpy, powder in-flight velocity, and temperature. The alumina spheroidization ratio increases by helium gas mixture as a result of enhancement of plasma enthalpy. The highest spheroidization ratio is obtained by 4% mixture of helium in central gas with enlarging nozzle diameter from 3 to 4 mm, even under the constant low input electric power given to a DC-RF hybrid plasma flow system.

Switchable hydrophobic/hydrophilic surface of electrospun poly (l-lactide) membranes obtained by CF₄microwave plasma treatment

DOE PAGES

Yue, Mengyao; Zhou, Baoming; Jiao, Kunyan; ...

2014-11-29

A switchable surface that promotes either hydrophobic or hydrophilic wettability of poly (L-lactide) (PLLA) microfibrous membranes is obtained by CF₄ microwave plasma treatment in this paper. The results indicated that both etching and grafting process occurred during the CF₄ plasma treatment and these two factors synergistically affected the final surface wettability of PLLA membranes. When plasma treatment was taken under a relatively low power, the surface wettability of PLLA membranes turned from hydrophobic to hydrophilic. Especially when CF₄ plasma treatment was taken under 100 W for 10 min and 150 W for 5 min, the water contact angle sharply decreasedmore » from 116 ± 3.0° to ~0°. According to Field-emission scanning electron microscopy (FESEM) results, the PLLA fibers were notably etched by CF₄ plasma treatment. Combined with the X-ray photoelectron spectroscopy (XPS) measurements, only a few fluorine-containing groups were grafted onto the surface, so the etching effect directly affected the surface wettability of PLLA membranes in low plasma power condition. However, with the plasma power increasing to 200 W, the PLLA membrane surface turned to hydrophobic again. In contrast, the morphology changes of PLLA fiber surfaces were not obvious while a large number of fluorine-containing groups grafted onto the surface. So the grafting effect gradually became the major factor for the final surface wettability.« less

Laboratory-scale uranium RF plasma confinement experiments

NASA Technical Reports Server (NTRS)

Roman, W. C.

1976-01-01

An experimental investigation was conducted using 80 kW and 1.2 MW RF induction heater facilities to aid in developing the technology necessary for designing a self-critical fissioning uranium plasma core reactor. Pure uranium hexafluoride (UF6) was injected into argon-confined, steady-state, RF-heated plasmas in different uranium plasma confinement tests to investigate the characteristics of plamas core nuclear reactors. The objectives were: (1) to confine as high a density of uranium vapor as possible within the plasma while simultaneously minimizing the uranium compound wall deposition; (2) to develop and test materials and handling techniques suitable for use with high-temperature, high-pressure gaseous UF6; and (3) to develop complementary diagnostic instrumentation and measurement techniques to characterize the uranium plasma and residue deposited on the test chamber components. In all tests, the plasma was a fluid-mechanically-confined vortex-type contained within a fused-silica cylindrical test chamber. The test chamber peripheral wall was 5.7 cm ID by 10 cm long.

Status and operation of the Linac4 ion source prototypes

NASA Astrophysics Data System (ADS)

Lettry, J.; Aguglia, D.; Andersson, P.; Bertolo, S.; Butterworth, A.; Coutron, Y.; Dallocchio, A.; Chaudet, E.; Gil-Flores, J.; Guida, R.; Hansen, J.; Hatayama, A.; Koszar, I.; Mahner, E.; Mastrostefano, C.; Mathot, S.; Mattei, S.; Midttun, Ø.; Moyret, P.; Nisbet, D.; Nishida, K.; O'Neil, M.; Ohta, M.; Paoluzzi, M.; Pasquino, C.; Pereira, H.; Rochez, J.; Sanchez Alvarez, J.; Sanchez Arias, J.; Scrivens, R.; Shibata, T.; Steyaert, D.; Thaus, N.; Yamamoto, T.

2014-02-01

CERN's Linac4 45 kV H- ion sources prototypes are installed at a dedicated ion source test stand and in the Linac4 tunnel. The operation of the pulsed hydrogen injection, RF sustained plasma, and pulsed high voltages are described. The first experimental results of two prototypes relying on 2 MHz RF-plasma heating are presented. The plasma is ignited via capacitive coupling, and sustained by inductive coupling. The light emitted from the plasma is collected by viewports pointing to the plasma chamber wall in the middle of the RF solenoid and to the plasma chamber axis. Preliminary measurements of optical emission spectroscopy and photometry of the plasma have been performed. The design of a cesiated ion source is presented. The volume source has produced a 45 keV H- beam of 16-22 mA which has successfully been used for the commissioning of the Low Energy Beam Transport (LEBT), Radio Frequency Quadrupole (RFQ) accelerator, and chopper of Linac4.

Estimates of RF-induced erosion at antenna-connected beryllium plasma-facing components in JET

DOE PAGES

Klepper, C. C.; Borodin, D.; Groth, M.; ...

2016-01-18

Radio-frequency (RF)-enhanced surface erosion of beryllium (Be) plasma-facing components is explored, for the first time, using the ERO code. We applied the code in order to measure the RF-enhanced edge Be line emission at JET Be outboard limiters, in the presence of high-power, ion cyclotronresonance heating (ICRH) in L-mode discharges. In this first modelling study, the RF sheath effect from an ICRH antenna on a magnetically connected, limiter region is simulated by adding a constant potential to the local sheath, in an attempt to match measured increases in local Be I and Be II emission of factors of 2 3.more » It was found that such increases are readily simulated with added potentials in the range of 100 200 V, which is compatible with expected values for potentials arising from rectification of sheath voltage oscillations from ICRH antennas in the scrape-off layer plasma. We also estimated absolute erosion values within the uncertainties in local plasma conditions.« less

ECCD-induced tearing mode stabilization in coupled IPS/NIMROD/GENRAY HPC simulations

NASA Astrophysics Data System (ADS)

Jenkins, Thomas; Kruger, S. E.; Held, E. D.; Harvey, R. W.; Elwasif, W. R.

2012-03-01

We summarize ongoing developments toward an integrated, predictive model for determining optimal ECCD-based NTM stabilization strategies in ITER. We demonstrate the capability of the SWIM Project's Integrated Plasma Simulator (IPS) framework to choreograph multiple executions of, and data exchanges between, physics codes modeling various spatiotemporal scales of this coupled RF/MHD problem on several thousand HPC processors. As NIMROD evolves fluid equations to model bulk plasma behavior, self-consistent propagation/deposition of RF power in the ensuing plasma profiles is calculated by GENRAY. Data from both codes is then processed by computational geometry packages to construct the RF-induced quasilinear diffusion tensor; moments of this tensor (entering as additional terms in NIMROD's fluid equations due to the disparity in RF/MHD spatiotemporal scales) influence the dynamics of current, momentum, and energy evolution as well as the MHD closures. Initial results are shown to correctly capture the physics of magnetic island stabilization; we also discuss the development of a numerical plasma control system for active feedback stabilization of tearing modes.

Measurement of the surface charge accumulation using anodic aluminum oxide(AAO) structure in an inductively coupled plasma

NASA Astrophysics Data System (ADS)

Park, Ji-Hwan; Oh, Seung-Ju; Lee, Hyo-Chang; Kim, Yu-Sin; Kim, Young-Cheol; Kim, June Young; Ha, Chang-Seoung; Kwon, Soon-Ho; Lee, Jung-Joong; Chung, Chin-Wook

2014-10-01

As the critical dimension of the nano-device shrinks, an undesired etch profile occurs during plasma etch process. One of the reasons is the local electric field due to the surface charge accumulation. To demonstrate the surface charge accumulation, an anodic aluminum oxide (AAO) membrane which has high aspect ratio is used. The potential difference between top electrode and bottom electrode in an anodic aluminum oxide contact structure is measured during inductively coupled plasma exposure. The voltage difference is changed with external discharge conditions, such as gas pressure, input power, and gas species and the result is analyzed with the measured plasma parameters.

Highlights of 10th plasma chemistry meeting

NASA Technical Reports Server (NTRS)

Kitamura, K.; Hashimoto, H.; Hozumi, K.

1981-01-01

The chemical structure is given of a film formed by plasma polymerization from pyridine monomers. The film has a hydrophilic chemical structure, its molecular weight is 900, and the molecular system is C55H50N10O3. The electrical characteristics of a plasma polymerized film are described. The film has good insulating properties and was successfully applied as video disc coating. Etching resistance properties make it possible to use the film as a resist in etching. The characteristics of plasma polymer formed from monomers containing tetramethyltin are discussed. The polymer is in film form, displays good adhesiveness, is similar to UV film UV 35 in light absorption and is highly insulating.

Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

NASA Astrophysics Data System (ADS)

Kwon, Yongbeom; Lee, Geonyeop; Oh, Sooyeoun; Kim, Jihyun; Pearton, Stephen J.; Ren, Fan

2017-03-01

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ˜60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional materials by using this scalable, industry-compatible dry etching technique.

RF low-level control for the Linac4 H{sup −} source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Butterworth, A., E-mail: andrew.butterworth@cern.ch; Grudiev, A.; Lettry, J.

2015-04-08

The H{sup −} source for the Linac4 accelerator at CERN uses an RF driven plasma for the production of H{sup −}. The RF is supplied by a 2 MHz RF tube amplifier with a maximum power output of 100 kW and a pulse duration of up to 2 ms. The low-level RF signal generation and measurement system has been developed using standard CERN controls electronics in the VME form factor. The RF frequency and amplitude reference signals are generated using separate arbitrary waveform generator channels. The frequency and amplitude are both freely programmable over the duration of the RF pulse, which allowsmore » fine-tuning of the excitation. Measurements of the forward and reverse RF power signals are performed via directional couplers using high-speed digitizers, and permit the estimation of the plasma impedance and deposited power via an equivalent circuit model. The low-level RF hardware and software implementations are described, and experimental results obtained with the Linac4 ion sources in the test stand are presented.« less

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE PAGES

Myra, J. R.

2017-07-07

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Effect of working power and pressure on plasma properties during the deposition of TiN films in reactive magnetron sputtering plasma measured using Langmuir probe measurement

NASA Astrophysics Data System (ADS)

How, Soo Ren; Nayan, Nafarizal; Khairul Ahmad, Mohd; Fhong Soon, Chin; Zainizan Sahdan, Mohd; Lias, Jais; Shuhaimi Abu Bakar, Ahmad; Arshad, Mohd Khairuddin Md; Hashim, Uda; Yazid Ahmad, Mohd

2018-04-01

The ion, electron density and electron temperature during formation of TiN films in reactive magnetron sputtering system have been investigated for various settings of radio frequency (RF) power and working pressure by using Langmuir probe measurements. The RF power and working pressure able to affect the densities and plasma properties during the deposition process. In this work, a working pressure (100 and 20 mTorr) and RF power (100, 150 and 200 W) have been used for data acquisition of probe measurement. Fundamental of studied on sputter deposition is very important for improvement of film quality and deposition rate. Higher working pressure and RF power able to produce a higher ion density and reduction of electron temperature.

Physics-based parametrization of the surface impedance for radio frequency sheaths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myra, J. R.

The properties of sheaths near conducting surfaces are studied for the case where both magnetized plasma and intense radio frequency (rf) waves coexist. The work is motivated primarily by the need to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, and is expected to be useful in modeling rf sheath interactions in global ICRF codes. Here, employing a previously developed model for oblique angle magnetized rf sheaths [J. R. Myra and D. A. D’Ippolito, Phys. Plasmas 22, 062507 (2015)], an investigation of the four-dimensional parameter space governing these sheath is carried out.more » By combining numerical and analytical results, a parametrization of the surface impedance and voltage rectification for rf sheaths in the entire four-dimensional space is obtained.« less

Density measurements in low pressure, weakly magnetized, RF plasmas: experimental verification of the sheath expansion effect

NASA Astrophysics Data System (ADS)

Zhang, Yunchao; Charles, Christine; Boswell, Roderick W.

2017-07-01

This experimental study shows the validity of Sheridan's method in determining plasma density in low pressure, weakly magnetized, RF plasmas using ion saturation current data measured by a planar Langmuir probe. The ion density derived from Sheridan's method which takes into account the sheath expansion around the negatively biased probe tip, presents a good consistency with the electron density measured by a cylindrical RF-compensated Langmuir probe using the Druyvesteyn theory. The ion density obtained from the simplified method which neglects the sheath expansion effect, overestimates the true density magnitude, e.g., by a factor of 3 to 12 for the present experiment.

Novel Vertical Interconnects With 180 Degree Phase Shift for Amplifiers, Filters, and Integrated Antennas

NASA Technical Reports Server (NTRS)

Goverdhanam, Kavita; Simons, Rainee N.; Katehi, Linda P. B.; Burke, Thomas P. (Technical Monitor)

2001-01-01

In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semiconductor devices and microelectromechanical systems (MEMS).

Study of Pulsed vs. RF Plasma Properties for Surface Processing Applications

NASA Astrophysics Data System (ADS)

Tang, Ricky; Hopkins, Matthew; Barnat, Edward; Miller, Paul

2015-09-01

The ability to manipulate the plasma parameters (density, E/N) was previously demonstrated using a double-pulsed column discharge. Experiments extending this to large-surface plasmas of interest to the plasma processing community were conducted. Differences between an audio-frequency pulsed plasma and a radio-frequency (rf) discharge, both prevalent in plasma processing applications, were studied. Optical emission spectroscopy shows higher-intensity emission in the UV/visible range for the pulsed plasma comparing to the rf plasma at comparable powers. Data suggest that the electron energy is higher for the pulsed plasma leading to higher ionization, resulting in increased ion density and ion flux. Diode laser absorption measurements of the concentration of the 1S5 metastable and 1S4 resonance states of argon (correlated with the plasma E/N) provide comparisons between the excitation/ionization states of the two plasmas. Preliminary modeling efforts suggest that the low-frequency polarity switch causes a much more abrupt potential variation to support interesting transport phenomena, generating a ``wave'' of higher temperature electrons leading to more ionization, as well as ``sheath capture'' of a higher density bolus of ions that are then accelerated during polarity switch.

Photocatalytic characteristic and photodegradation kinetics of toluene using N-doped TiO2 modified by radio frequency plasma.

PubMed

Shie, Je-Lueng; Lee, Chiu-Hsuan; Chiou, Chyow-San; Chen, Yi-Hung; Chang, Ching-Yuan

2014-01-01

This study investigates the feasibility of applications of the plasma surface modification of photocatalysts and the removal of toluene from indoor environments. N-doped TiO2 is prepared by precipitation methods and calcined using a muffle furnace (MF) and modified by radio frequency plasma (RF) at different temperatures with light sources from a visible light lamp (VLL), a white light-emitting diode (WLED) and an ultraviolet light-emitting diode (UVLED). The operation parameters and influential factors are addressed and prepared for characteristic analysis and photo-decomposition examination. Furthermore, related kinetic models are established and used to simulate the experimental data. The characteristic analysis results show that the RF plasma-calcination method enhanced the Brunauer Emmett Teller surface area of the modified photocatalysts effectively. For the elemental analysis, the mass percentages of N for the RF-modified photocatalyst are larger than those of MF by six times. The aerodynamic diameters of the RF-modifiedphotocatalyst are all smaller than those of MF. Photocatalytic decompositions of toluene are elucidated according to the Langmuir-Hinshelwood model. Decomposition efficiencies (eta) of toluene for RF-calcined methods are all higher than those of commercial TiO2 (P25). Reaction kinetics ofphoto-decomposition reactions using RF-calcined methods with WLED are proposed. A comparison of the simulation results with experimental data is also made and indicates good agreement. All the results provide useful information and design specifications. Thus, this study shows the feasibility and potential use of plasma modification via LED in photocatalysis.

Emission characteristics of 6.78-MHz radio-frequency glow discharge plasma in a pulsed mode

NASA Astrophysics Data System (ADS)

Zhang, Xinyue; Wagatsuma, Kazuaki

2017-07-01

This paper investigated Boltzmann plots for both atomic and ionic emission lines of iron in an argon glow discharge plasma driven by 6.78-MHz radio-frequency (RF) voltage in a pulsed operation, in order to discuss how the excitation/ionization process was affected by the pulsation. For this purpose, a pulse frequency as well as a duty ratio of the pulsed RF voltage was selected as the experimenter parameters. A Grimm-style radiation source was employed at a forward RF power of 70 W and at an argon pressures of 670 Pa. The Boltzmann plot for low-lying excited levels of iron atom was on a linear relationship, which was probably attributed to thermal collisions with ultimate electrons in the negative glow region; in this case, the excitation temperature was obtained in a narrow range of 3300-3400 K, which was hardly affected by the duty ratio as well as the pulse frequency of the pulsed RF glow discharge plasma. This observation suggested that the RF plasma could be supported by a self-stabilized negative glow region, where the kinetic energy distribution of the electrons would be changed to a lesser extent. Additional non-thermal excitation processes, such as a Penning-type collision and a charge-transfer collision, led to deviations (overpopulation) of particular energy levels of iron atom or iron ion from the normal Boltzmann distribution. However, their contributions to the overall excitation/ionization were not altered so greatly, when the pulse frequency or the duty ratio was varied in the pulsed RF glow discharge plasma.

Prediction of silicon oxynitride plasma etching using a generalized regression neural network

NASA Astrophysics Data System (ADS)

Kim, Byungwhan; Lee, Byung Teak

2005-08-01

A prediction model of silicon oxynitride (SiON) etching was constructed using a neural network. Model prediction performance was improved by means of genetic algorithm. The etching was conducted in a C2F6 inductively coupled plasma. A 24 full factorial experiment was employed to systematically characterize parameter effects on SiON etching. The process parameters include radio frequency source power, bias power, pressure, and C2F6 flow rate. To test the appropriateness of the trained model, additional 16 experiments were conducted. For comparison, four types of statistical regression models were built. Compared to the best regression model, the optimized neural network model demonstrated an improvement of about 52%. The optimized model was used to infer etch mechanisms as a function of parameters. The pressure effect was noticeably large only as relatively large ion bombardment was maintained in the process chamber. Ion-bombardment-activated polymer deposition played the most significant role in interpreting the complex effect of bias power or C2F6 flow rate. Moreover, [CF2] was expected to be the predominant precursor to polymer deposition.

Etch Profile Simulation Using Level Set Methods

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

1997-01-01

Etching and deposition of materials are critical steps in semiconductor processing for device manufacturing. Both etching and deposition may have isotropic and anisotropic components, due to directional sputtering and redeposition of materials, for example. Previous attempts at modeling profile evolution have used so-called "string theory" to simulate the moving solid-gas interface between the semiconductor and the plasma. One complication of this method is that extensive de-looping schemes are required at the profile corners. We will present a 2D profile evolution simulation using level set theory to model the surface. (1) By embedding the location of the interface in a field variable, the need for de-looping schemes is eliminated and profile corners are more accurately modeled. This level set profile evolution model will calculate both isotropic and anisotropic etch and deposition rates of a substrate in low pressure (10s mTorr) plasmas, considering the incident ion energy angular distribution functions and neutral fluxes. We will present etching profiles of Si substrates in Ar/Cl2 discharges for various incident ion energies and trench geometries.

Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr; Jiménez, Juan; Torres, Alfredo

The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structuremore » on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion mass spectrometry indicates penetration of chlorine in the structures. Transmission electron microscopy is used to characterize the quantum well structure before and after plasma bombardment. By examining carefully the luminescence spectral properties, the authors could demonstrate the influence of the etching plasmas on the built-in electric field (in the case of doped samples), and relate it to some ionic species penetrating the structures. Etching plasmas involving both chlorine and nitrogen have also been studied. The etching rate for these chemistries is much slower than for some of the silicon tetrachloride based chemistries. Their effects on the samples are also very different, showing much reduced effect on the built-in electric field (for the doped samples), but significant blue-shifts of the luminescence peaks that the authors attributed to the penetration of nitrogen in the structures. Nitrogen, in interstitial locations, induces mechanical compressive stress that accounts for the blue-shifts. Finally, from the comparison between secondary ion mass spectrometry and luminescence spectra, the authors suggest some elements for a general mechanism involved in the etching by chloride-chemistries, in which a competition takes place between the species at the surface, active for the etching mechanism, and the species that penetrate the structure, lost for the etching process, but relevant in terms of impact on the electro-optic and structural features of the exposed materials.« less

The electric field in capacitively coupled RF discharges: a smooth step model that includes thermal and dynamic effects

NASA Astrophysics Data System (ADS)

Brinkmann, Ralf Peter

2015-12-01

The electric field in radio-frequency driven capacitively coupled plasmas (RF-CCP) is studied, taking thermal (finite electron temperature) and dynamic (finite electron mass) effects into account. Two dimensionless numbers are introduced, the ratios ε ={λ\\text{D}}/l of the electron Debye length {λ\\text{D}} to the minimum plasma gradient length l (typically the sheath thickness) and η ={ω\\text{RF}}/{ω\\text{pe}} of the RF frequency {ω\\text{RF}} to the electron plasma frequency {ω\\text{pe}} . Assuming both numbers small but finite, an asymptotic expansion of an electron fluid model is carried out up to quadratic order inclusively. An expression for the electric field is obtained which yields (i) the space charge field in the sheath, (ii) the generalized Ohmic and ambipolar field in the plasma, and (iii) a smooth interpolation for the transition in between. The new expression is a direct generalization of the Advanced Algebraic Approximation (AAA) proposed by the same author (2009 J. Phys. D: Appl. Phys. 42 194009), which can be recovered for η \\to 0 , and of the established Step Model (SM) by Godyak (1976 Sov. J. Plasma Phys. 2 78), which corresponds to the simultaneous limits η \\to 0 , ε \\to 0 . A comparison of the hereby proposed Smooth Step Model (SSM) with a numerical solution of the full dynamic problem proves very satisfactory.

Infrared gas phase study on plasma-polymer interactions in high-current diffuse dielectric barrier discharge

NASA Astrophysics Data System (ADS)

Liu, Y.; Welzel, S.; Starostin, S. A.; van de Sanden, M. C. M.; Engeln, R.; de Vries, H. W.

2017-06-01

A roll-to-roll high-current diffuse dielectric barrier discharge at atmospheric pressure was operated in air and Ar/N2/O2 gas mixtures. The exhaust gas from the discharge was studied using a high-resolution Fourier-transform infrared spectrometer in the range from 3000 to 750 cm-1 to unravel the plasma-polymer interactions. The absorption features of HxNyOz, COx, and HCOOH (formic acid) were identified, and the relative densities were deduced by fitting the absorption bands of the detected molecules. Strong interactions between plasma and polymer (Polyethylene-2,6-naphthalate, or PEN) in precursor-free oxygen-containing gas mixtures were observed as evidenced by a high COx production. The presence of HCOOH in the gas effluent, formed through plasma-chemical synthesis of COx, turns out to be a sensitive indicator for etching. By adding tetraethylorthosilicate precursor in the plasma, dramatic changes in the COx production were measured, and two distinct deposition regimes were identified. At high precursor flows, a good agreement with the precursor combustion and the COx production was observed, whereas at low precursor flows an etching-deposition regime transpires, and the COx production is dominated by polymer etching.

Method for Cleaning Laser-Drilled Holes on Printed Wiring Boards by Plasma Treatment

NASA Astrophysics Data System (ADS)

Hirogaki, Toshiki; Aoyama, Eiichi; Minagi, Ryu; Ogawa, Keiji; Katayama, Tsutao; Matsuoka, Takashi; Inoue, Hisahiro

We propose a new method for cleaning blind via holes after laser drilling of PWBs using oxygen plasma treatment. This report dealt with three kinds of PWB materials: epoxy resin and two kinds of aramid fiber reinforced plastics (AFRP: Technora or Kevlar fiber reinforcement). We observed the drilled holes after plasma treatment using both an optical and a scanning electric microscope (SEM). It was confirmed that adequate etching took place in the drilled holes by plasma treatment. We also compared the hole wall and hole bottom after plasma treatment with ones after chemical etching. It was clear that there was no damage to the aramid fiber tip on the hole wall, and that a smooth roughness of the hole wall was obtained by means of plasma treatment. As a result, we demonstrated that the plasma treatment is effective in cleaning the laser drilled holes of PWBs.

Measurements and modeling of the impact of weak magnetic fields on the plasma properties of a planar slot antenna driven plasma source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshikawa, Jun, E-mail: jun.yoshikawa@tel.com; Susa, Yoshio; Ventzek, Peter L. G.

The radial line slot antenna plasma source is a type of surface wave plasma source driven by a planar slot antenna. Microwave power is transmitted through a slot antenna structure and dielectric window to a plasma characterized by a generation zone adjacent to the window and a diffusion zone that contacts a substrate. The diffusion zone is characterized by a very low electron temperature. This renders the source useful for soft etch applications and thin film deposition processes requiring low ion energy. Another property of the diffusion zone is that the plasma density tends to decrease from the axis tomore » the walls under the action of ambipolar diffusion at distances far from where the plasma is generated. A previous simulation study [Yoshikawa and. Ventzek, J. Vac. Sci. Technol. A 31, 031306 (2013)] predicted that the anisotropy in transport parameters due to weak static magnetic fields less than 50 G could be leveraged to manipulate the plasma profile in the radial direction. These simulations motivated experimental tests in which weak magnetic fields were applied to a radial line slot antenna source. Plasma absorption probe measurements of electron density and etch rate showed that the magnetic fields remote from the wafer were able to manipulate both parameters. A summary of these results is presented in this paper. Argon plasma simulation trends are compared with experimental plasma and etch rate measurements. A test of the impact of magnetic fields on charge up damage showed no perceptible negative effect.« less

40 CFR Table I-16 to Subpart I of... - Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Code of Federal Regulations, 2014 CFR

2014-07-01

... Manufacturing: Plasma Etch/Wafer Clean Process Type: CF4 75 CH3F 97 CHF3 97 CH2F2 97 C2F6 97 C3F8 97 C4F6 97 C4F8 97 C5F8 97 SF6 97 NF3 96 All other carbon-based plasma etch/wafer clean fluorinated GHG 60 Chamber...

Plasma Boundary Collisionless Absorption Effects in the Loading of RF Conductors,

DTIC Science & Technology

1979-10-01

a quasi-thermodynamic equilibrium between the charged particles and the applied RF potential. It is clear that the effect of external magnetic fields...AO-AOBI 115 CALIFORNIA UNIV LOS ANBELES PLASMA PHYSICS BROUP F/6O 20/9 PLASMA BOUNDARY COLLISIONLESS ABSORPTION EFFECTS IN THE LbADINGS-E*IC(U) OCT...79 B J MORALES N00OOIATB-C-0NA NLASIED PPB-435 NL mii-hiiiii PLASMA BOUNDARY COLLISIONLESS ABSORPTION EFFECTS IN THE LOADING OF ONDUCTOR) (𔃻.J. Oral

The effect of radio-frequency self bias on ion acceleration in expanding argon plasmas in helicon sources

NASA Astrophysics Data System (ADS)

Wiebold, Matthew D.

Time-averaged plasma potential differences up to ˜ 165 V over several hundred Debye lengths are observed in low pressure (pn < 1 mTorr) expanding argon plasmas in the Madison Helicon Experiment. The potential gradient leads to ion acceleration exceeding Ei ≈ 7 kTe in some cases. Up to 1 kW of 13.56 MHz RF power is supplied to a half-turn, double-helix antenna in the presence of a nozzle magnetic field up to 1 kG. An RPA measures the IEDF and an emissive probe measures the plasma potential. Single and double probes measure the electron density and temperature. Two distinct mode hops, the capacitive-inductive (E-H) and inductive-helicon (H-W) transitions, are identified by jumps in electron density as RF power is increased. In the capacitive mode, large fluctuations of the plasma potential (Vp--p ≳ 140 V, Vp--p/Vp ≈ 150%) exist at the RF frequency, leading to formation of a self-bias voltage. The mobile electrons can flow from the upstream region during an RF cycle whereas ions cannot, leading to an initial imbalance of flux, and the self-bias voltage builds as a result. The plasma potential in the expansion chamber is held near the floating potential for argon (Vp ≈ 5kTe/e). In the capacitive mode, the ion acceleration is not well described by an ambipolar relation. The accelerated population decay is consistent with that predicted by charge-exchange collisions. Grounding the upstream endplate increases the self-bias voltage compared to a floating endplate. In the inductive and helicon modes, the ion acceleration more closely follows an ambipolar relation, a result of decreased capacitive coupling due to the decreased RF skin depth. The scaling of the potential gradient with the argon flow rate, magnetic field and RF power are investigated, with the highest potential gradients observed for the lowest flow rates in the capacitive mode. The magnitude of the self-bias voltage agrees well with that predicted for RF sheaths. Use of the self-bias effect in a plasma thruster is explored, possibly for a low thrust, high specific impulse mode in a multi-mode helicon thruster. This work could also explain similar potential gradients in expanding helicon plasmas that are ascribed to double layer formation in the literature.

Radiofrequency antenna for suppression of parasitic discharges in a helicon plasma thruster experiment.

PubMed

Takahashi, Kazunori

2012-08-01

A radiofrequency (rf) antenna for helicon plasma thruster experiments is developed and tested using a permanent magnets helicon plasma source immersed in a vacuum chamber. A magnetic nozzle is provided by permanent magnets arrays and an argon plasma is produced by a 13.56 MHz radiofrequency helicon-wave or inductively-coupled discharge. A parasitic discharge outside the source tube is successfully suppressed by covering the rf antenna with a ceramic ring and a grounded shield; a decrease in the ion saturation current of a Langmuir probe located outside the source tube is observed and the ion saturation current on axis increases simultaneously, compared with the case of a standard uncovered rf antenna. It is also demonstrated that the covered antenna can yield stable operation of the source.

Characteristic properties of the frame-antenna-produced RF discharge evolution in the Uragan-3M torsatron

NASA Astrophysics Data System (ADS)

Chechkin, V. V.; Grigor'eva, L. I.; Pavlichenko, R. O.; Kulaga, A. Ye.; Zamanov, N. V.; Moiseenko, V. E.; Burchenko, P. Ya.; Lozin, A. V.; Tsybenko, S. A.; Tarasov, I. K.; Pankratov, I. M.; Grekov, D. L.; Beletskii, A. A.; Kasilov, A. A.; Voitsenya, V. S.; Pashnev, V. K.; Konovalov, V. G.; Shapoval, A. N.; Mironov, Yu. K.; Romanov, V. S.

2014-08-01

In the ℓ = 3 Uragan-3M torsatron, hydrogen plasma is produced and heated by RF fields in the Alfvén range of frequencies (ω ≲ ω ci ). To this end, a frame antenna with a broad spectrum of generated parallel wavenumbers is used. The RF discharge evolution is studied experimentally at different values of the RF power fed to the antenna (the anode voltage of the oscillator and the antenna current) and the initial pressure of the fueling gas. It is shown that, depending on the antenna current and hydrogen pressure, the discharge can operate in two regimes differing in the plasma density, temperature, and particle loss. The change in the discharge regime with increasing anode voltage is steplike in character. The particular values of the anode voltage and pressure at which the change occurs are affected by RF preionization or breakdown stabilization by a microwave discharge. The obtained results will be used in future experiments to choose the optimal regimes of the frame-antenna-produced RF discharge as a target for the production and heating of a denser plasma by another, shorter wavelength three-half-turn antenna.

High power fast wave experiments in LAPD: interaction with density fluctuations and status/plans for ICRH

NASA Astrophysics Data System (ADS)

Carter, Troy; Martin, Michael; van Compernolle, Bart; Gekelman, Walter; Pribyl, Pat; Vincena, Stephen; Tripathi, Shreekrishna; van Eester, Dirk; Crombe, Kristel

2016-10-01

The LArge Plasma Device (LAPD) at UCLA is a 17 m long, up to 60 cm diameter magnetized plasma column with typical plasma parameters ne 1012 -1013 cm-3, Te 1 - 10 eV, and B 1 kG. A new high-power ( 200 kW) RF system and antenna has been developed for LAPD, enabling the generation of large amplitude fast waves in LAPD. Interaction between the fast waves and density fluctuations is observed, resulting in modulation of the coupled RF power. Two classes of RF-induced density fluctuations are observed. First, a coherent (10 kHz) oscillation is observed spatially near the antenna in response to the initial RF turn-on transient. Second, broadband density fluctuations are enhanced when the RF power is above a threshold a threshold. Strong modulation of the fast wave magnetic fluctuations is observed along with broadening of the primary RF spectral line. Ultimately, high power fast waves will be used for ion heating in LAPD through minority species fundamental heating or second harmonic minority or majority heating. Initial experimental results from heating experiments will be presented along with a discussion of future plans. BaPSF supported by NSF and DOE.

Plasma production by helicon and slow waves.

PubMed

Sakawa, Youichi; Kunimatsu, Hiroyuki; Kikuchi, Hideki; Fukui, Yasuaki; Shoji, Tatsuo

2003-03-14

The observation of slow-wave sustained (SW) discharge in a whistler- or helicon-wave range of frequency is made using high-frequency and very-high-frequency bands of rf. The SW discharge occurs at an extremely low rf power and plasma density, which are lower than a capacitive-coupling discharge region.

Selective Plasma Deposition of Fluorocarbon Films on SAMs

NASA Technical Reports Server (NTRS)

Crain, Mark M., III; Walsh, Kevin M.; Cohn, Robert W.

2006-01-01

A dry plasma process has been demonstrated to be useful for the selective modification of self-assembled monolayers (SAMs) of alkanethiolates. These SAMs are used, during the fabrication of semiconductor electronic devices, as etch masks on gold layers that are destined to be patterned and incorporated into the devices. The selective modification involves the formation of fluorocarbon films that render the SAMs more effective in protecting the masked areas of the gold against etching by a potassium iodide (KI) solution. This modification can be utilized, not only in the fabrication of single electronic devices but also in the fabrication of integrated circuits, microelectromechanical systems, and circuit boards. In the steps that precede the dry plasma process, a silicon mold in the desired pattern is fabricated by standard photolithographic techniques. A stamp is then made by casting polydimethylsiloxane (commonly known as silicone rubber) in the mold. The stamp is coated with an alkanethiol solution, then the stamp is pressed on the gold layer of a device to be fabricated in order to deposit the alkanethiol to form an alkanethiolate SAM in the desired pattern (see figure). Next, the workpiece is exposed to a radio-frequency plasma generated from a mixture of CF4 and H2 gases. After this plasma treatment, the SAM is found to be modified, while the exposed areas of gold remain unchanged. This dry plasma process offers the potential for forming masks superior to those formed in a prior wet etching process. Among the advantages over the wet etching process are greater selectivity, fewer pin holes in the masks, and less nonuniformity of the masks. The fluorocarbon films formed in this way may also be useful as intermediate layers for subsequent fabrication steps and as dielectric layers to be incorporated into finished products.

Circular lasers for telecommunications and rf/photonics applications

NASA Astrophysics Data System (ADS)

Griffel, Giora

2000-04-01

Following a review of ring resonator research in the past decade we shall report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply-etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally- coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150 micrometers radius with negligible bending loss. The lasers operate CW single mode up to nearly twice threshold with a 26 dB side-mode-suppression ratio. We shall also present a transfer matrix formalism for the analysis of ring resonator arrays and indicate application examples for flat band filter synthesis.

Contact Resistance and Stability Analysis of Oxide-Based Thin Film Transistors

DTIC Science & Technology

2006-09-19

layer (~ 50 nm) is deposited via RF magnetron sputtering from a 2 inch target (Cerac, Inc.; ZnO and IGO (1:1 molar ratio of In2O3: Ga2O3 )) at a pressure...10.2 600 ~ 50 IGO (1:1, In2O3: Ga2O3 ) 90%/10% 5 ~ 3.7 ~ 10.2 600 ~ 50 Table 4.1: Summary of process parameters for TFTs fabricated on thermal silicon...oxide and furnace annealed. Channel Material Wet Etch Etch Rate ZnO ~ 0.01 M HCl ~ 17.5 Å/s IGO (1:1, In2O3: Ga2O3 ) ~ 2 M HCl ~ 6.3 Å/s

Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore » sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.« less

Atmospheric-pressure diffuse dielectric barrier discharges in Ar/O2 gas mixture using 200 kHz/13.56 MHz dual frequency excitation

NASA Astrophysics Data System (ADS)

Liu, Y.; Starostin, S. A.; Peeters, F. J. J.; van de Sanden, M. C. M.; de Vries, H. W.

2018-03-01

Atmospheric-pressure diffuse dielectric barrier discharges (DBDs) were obtained in Ar/O2 gas mixture using dual-frequency (DF) excitation at 200 kHz low frequency (LF) and 13.56 MHz radio frequency (RF). The excitation dynamics and the plasma generation mechanism were studied by means of electrical characterization and phase resolved optical emission spectroscopy (PROES). The DF excitation results in a time-varying electric field which is determined by the total LF and RF gas voltage and the spatial ion distribution which only responds to the LF component. By tuning the amplitude ratio of the superimposed LF and RF signals, the effect of each frequency component on the DF discharge mechanism was analysed. The LF excitation results in a transient plasma with the formation of an electrode sheath and therefore a pronounced excitation near the substrate. The RF oscillation allows the electron trapping in the gas gap and helps to improve the plasma uniformity by contributing to the pre-ionization and by controlling the discharge development. The possibility of temporally modifying the electric field and thus the plasma generation mechanism in the DF discharge exhibits potential applications in plasma-assisted surface processing and plasma-assisted gas phase chemical conversion.

Inductive current startup in large tokamaks with expanding minor radius and RF assist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borowski, S.K.

1983-01-01

Auxiliary RF heating of electrons before and during the current rise phase of a large tokamak, such as the Fusion Engineering Device, is examined as a means of reducing both the initiation loop voltage and resistive flux expenditure during startup. Prior to current initiation, 1 to 2 MW of electron cyclotron resonance heating power at approx.90 GHz is used to create a small volume of high conductivity plasma (T/sub e/ approx. = 100 eV, n/sub e/ approx. = 10/sup 19/m/sup -3/) near the upper hybrid resonance (UHR) region. This plasma conditioning permits a small radius (a/sup 0/ approx.< 0.4 m)more » current channel to be established with a relatively low initial loop voltage (approx.< 25 V as opposed to approx.100 V without RF assist). During the subsequent plasma expansion and current ramp phase, additional RF power is introduced to reduce volt-second consumption due to plasma resistance. To study the preheating phase, a near classical particle and energy transport model is developed to estimate the electron heating efficiency in a currentless toroidal plasma. The model assumes that preferential electron heating at the UHR leads to the formation of an ambipolar sheath potential between the neutral plasma and the conducting vacuum vessel and limiter.« less

Plasma Processes for Semiconductor Fabrication

NASA Astrophysics Data System (ADS)

Hitchon, W. N. G.

1999-01-01

Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Absolute Spatially- and Temporally-Resolved Optical Emission Measurements of rf Glow Discharges in Argon

PubMed Central

Djurović, S.; Roberts, J. R.; Sobolewski, M. A.; Olthoff, J. K.

1993-01-01

Spatially- and temporally-resolved measurements of optical emission intensities are presented from rf discharges in argon over a wide range of pressures (6.7 to 133 Pa) and applied rf voltages (75 to 200 V). Results of measurements of emission intensities are presented for both an atomic transition (Ar I, 750.4 nm) and an ionic transition (Ar II, 434.8 nm). The absolute scale of these optical emissions has been determined by comparison with the optical emission from a calibrated standard lamp. All measurements were made in a well-defined rf reactor. They provide detailed characterization of local time-resolved plasma conditions suitable for the comparison with results from other experiments and theoretical models. These measurements represent a new level of detail in diagnostic measurements of rf plasmas, and provide insight into the electron transport properties of rf discharges. PMID:28053464

Dry etching method for compound semiconductors

DOEpatents

Shul, Randy J.; Constantine, Christopher

1997-01-01

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Dry etching method for compound semiconductors

DOEpatents

Shul, R.J.; Constantine, C.

1997-04-29

A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.

Resonant-frequency discharge in a multi-cell radio frequency cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, S; Upadhyay, J; Mammosser, J

2014-11-07

We are reporting experimental results on microwave discharge operating at resonant frequency in a multi-cell radio frequency (RF) accelerator cavity. Although the discharge operated at room temperature, the setup was constructed so that it could be used for plasma generation and processing in fully assembled active superconducting radio-frequency (SRF) cryomodule (in situ operation). This discharge offers an efficient mechanism for removal of a variety of contaminants, organic or oxide layers, and residual particulates from the interior surface of RF cavities through the interaction of plasma-generated radicals with the cavity walls. We describe resonant RF breakdown conditions and address the problemsmore » related to generation and sustaining the multi-cell cavity plasma, which are breakdown and resonant detuning. We have determined breakdown conditions in the cavity, which was acting as a plasma vessel with distorted cylindrical geometry. We discuss the spectroscopic data taken during plasma removal of contaminants and use them to evaluate plasma parameters, characterize the process, and estimate the volatile contaminant product removal.« less

Comparison of Three Plasma Sources for Ambient Desorption/Ionization Mass Spectrometry

NASA Astrophysics Data System (ADS)

McKay, Kirsty; Salter, Tara L.; Bowfield, Andrew; Walsh, James L.; Gilmore, Ian S.; Bradley, James W.

2014-09-01

Plasma-based desorption/ionization sources are an important ionization technique for ambient surface analysis mass spectrometry. In this paper, we compare and contrast three competing plasma based desorption/ionization sources: a radio-frequency (rf) plasma needle, a dielectric barrier plasma jet, and a low-temperature plasma probe. The ambient composition of the three sources and their effectiveness at analyzing a range of pharmaceuticals and polymers were assessed. Results show that the background mass spectrum of each source was dominated by air species, with the rf needle producing a richer ion spectrum consisting mainly of ionized water clusters. It was also seen that each source produced different ion fragments of the analytes under investigation: this is thought to be due to different substrate heating, different ion transport mechanisms, and different electric field orientations. The rf needle was found to fragment the analytes least and as a result it was able to detect larger polymer ions than the other sources.

Comparison of three plasma sources for ambient desorption/ionization mass spectrometry.

PubMed

McKay, Kirsty; Salter, Tara L; Bowfield, Andrew; Walsh, James L; Gilmore, Ian S; Bradley, James W

2014-09-01

Plasma-based desorption/ionization sources are an important ionization technique for ambient surface analysis mass spectrometry. In this paper, we compare and contrast three competing plasma based desorption/ionization sources: a radio-frequency (rf) plasma needle, a dielectric barrier plasma jet, and a low-temperature plasma probe. The ambient composition of the three sources and their effectiveness at analyzing a range of pharmaceuticals and polymers were assessed. Results show that the background mass spectrum of each source was dominated by air species, with the rf needle producing a richer ion spectrum consisting mainly of ionized water clusters. It was also seen that each source produced different ion fragments of the analytes under investigation: this is thought to be due to different substrate heating, different ion transport mechanisms, and different electric field orientations. The rf needle was found to fragment the analytes least and as a result it was able to detect larger polymer ions than the other sources.

Duty cycle dependent chemical structure and wettability of RF pulsed plasma copolymers of acrylic acid and octafluorocyclobutane

NASA Astrophysics Data System (ADS)

Muzammil, I.; Li, Y. P.; Li, X. Y.; Lei, M. K.

2018-04-01

Octafluorocyclobutane and acrylic acid (C4F8-co-AA) plasma copolymer coatings are deposited using a pulsed wave (PW) radio frequency (RF) plasma on low density polyethylene (LDPE). The influence of duty cycle in pulsed process with the monomer feed rate on the surface chemistry and wettability of C4F8-co-AA plasma polymer coatings is studied. The concentration of the carboxylic acid (hydrophilic) groups increase, and that of fluorocarbon (hydrophobic) groups decrease by lowering the duty cycle. The combined effect of surface chemistry and surface morphology of the RF pulsed plasma copolymer coatings causes tunable surface wettability and surface adhesion. The gradual emergence of hydrophilic contents leads to surface heterogeneity by lowering duty cycle causing an increased surface adhesion in hydrophobic coatings. The C4F8-co-AA plasma polymer coatings on the nanotextured surfaces are tuned from repulsive superhydrophobicity to adhesive superhydrophobicity, and further to superhydrophilicity by adjusting the duty cycles with the monomer feed rates.

Experimental Studies of Compact Toroidal Plasma on BCTX

NASA Astrophysics Data System (ADS)

Morse, Edward C.; Coomer, Eric D.; Hartman, Charles W.

1998-11-01

The Berkeley Compact Toroid Experiment (BCTX) is a spheromak-type magnetically confined fusion confinement experiment. The plasma is formed using a Marshall gun and injected into a 70 cm diameter copper flux conserver. The BCTX device has an RF heating sy stem which can deliver twenty megawatts of RF power for 100 μs pulse length. The RF system operates at 450 MHz, and energy is coupled into the plasma by lower hybrid waves. The purpose of the experiment is to assess the energy-confining capability of the spheromak plasma configuration by using the RF power as a heat pulse and determining the decay rate of the plasma temperature following the heat pulse. Electron temperatures up to 150 eV have been measured in BCTX using Thomson scattering. Core dens ities have been measured with the Raman-calibrated Thomson system in the 2 arrow 5 × 10^14 per cc range. Other diagnostics include magnetic probes, a laser interferometer electron density measurement, three UV spectrometers for impurity l ine radiation, and an ion Doppler temperature measurement. Some data will be presented which shows the effects of an axial pinch being present in the device, giving the device a nonzero q at the wall.

Optical characteristics of a RF DBD plasma jet in various {Ar}/ {O}_{2}Ar/O2 mixtures

NASA Astrophysics Data System (ADS)

Falahat, A.; Ganjovi, A.; Taraz, M.; Ravari, M. N. Rostami; Shahedi, A.

2018-02-01

In this paper, using the optical emission spectroscopy (OES) technique, the optical characteristics of a radiofrequency (RF) plasma jet are examined. The Ar/O2 mixture is taken as the operational gas and, the Ar percentage in the Ar/O2 mixture is varied from 70% to 95%. Using the optical emission spectrum analysis of the RF plasma jet, the excitation temperature is determined based on the Boltzmann plot method. The electron density in the plasma medium of the RF plasma jet is obtained by the Stark broadening of the hydrogen Balmer H_{β }. It is mostly seen that, the radiation intensity of Ar 4p→ 4s transitions at higher argon contributions in Ar/O2 mixture is higher. It is found that, at higher Ar percentages, the emission intensities from atomic oxygen (O) are higher and, the line intensities from the argon atoms and ions including O atoms linearly increase. It is observed that the quenching of Ar^{*} with O2 results in higher O species with respect to O2 molecules. In addition, at higher percentages of Ar in the Ar/O2 mixture, while the excitation temperature is decreased, the electron density is increased.

Temporally resolved ozone distribution of a time modulated RF atmospheric pressure argon plasma jet: flow, chemical reaction, and transient vortex

NASA Astrophysics Data System (ADS)

Zhang, S.; Sobota, A.; van Veldhuizen, E. M.; Bruggeman, P. J.

2015-08-01

The ozone density distribution in the effluent of a time modulated RF atmospheric pressure plasma jet (APPJ) is investigated by time and spatially resolved by UV absorption spectroscopy. The plasma jet is operated with an averaged dissipated power of 6.5 W and gas flow rate 2 slm argon  +2% O2. The modulation frequency of the RF power is 50 Hz with a duty cycle of 50%. To investigate the production and destruction mechanism of ozone in the plasma effluent, the atomic oxygen and gas temperature is also obtained by TALIF and Rayleigh scattering, respectively. A temporal increase in ozone density is observed close to the quartz tube exit when the plasma is switched off due to the decrease in O density and gas temperature. Ozone absorption at different axial positions indicates that the ozone distribution is dominated by the convection induced by the gas flow and allows estimating the on-axis local gas velocity in the jet effluent. Transient vortex structures occurring during the switch on and off of the RF power also significantly affect the ozone density in the far effluent.

Alternative modeling methods for plasma-based Rf ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veitzer, Seth A., E-mail: veitzer@txcorp.com; Kundrapu, Madhusudhan, E-mail: madhusnk@txcorp.com; Stoltz, Peter H., E-mail: phstoltz@txcorp.com

Rf-driven ion sources for accelerators and many industrial applications benefit from detailed numerical modeling and simulation of plasma characteristics. For instance, modeling of the Spallation Neutron Source (SNS) internal antenna H{sup −} source has indicated that a large plasma velocity is induced near bends in the antenna where structural failures are often observed. This could lead to improved designs and ion source performance based on simulation and modeling. However, there are significant separations of time and spatial scales inherent to Rf-driven plasma ion sources, which makes it difficult to model ion sources with explicit, kinetic Particle-In-Cell (PIC) simulation codes. Inmore » particular, if both electron and ion motions are to be explicitly modeled, then the simulation time step must be very small, and total simulation times must be large enough to capture the evolution of the plasma ions, as well as extending over many Rf periods. Additional physics processes such as plasma chemistry and surface effects such as secondary electron emission increase the computational requirements in such a way that even fully parallel explicit PIC models cannot be used. One alternative method is to develop fluid-based codes coupled with electromagnetics in order to model ion sources. Time-domain fluid models can simulate plasma evolution, plasma chemistry, and surface physics models with reasonable computational resources by not explicitly resolving electron motions, which thereby leads to an increase in the time step. This is achieved by solving fluid motions coupled with electromagnetics using reduced-physics models, such as single-temperature magnetohydrodynamics (MHD), extended, gas dynamic, and Hall MHD, and two-fluid MHD models. We show recent results on modeling the internal antenna H{sup −} ion source for the SNS at Oak Ridge National Laboratory using the fluid plasma modeling code USim. We compare demonstrate plasma temperature equilibration in two-temperature MHD models for the SNS source and present simulation results demonstrating plasma evolution over many Rf periods for different plasma temperatures. We perform the calculations in parallel, on unstructured meshes, using finite-volume solvers in order to obtain results in reasonable time.« less

Alternative modeling methods for plasma-based Rf ion sources.

PubMed

Veitzer, Seth A; Kundrapu, Madhusudhan; Stoltz, Peter H; Beckwith, Kristian R C

2016-02-01

Rf-driven ion sources for accelerators and many industrial applications benefit from detailed numerical modeling and simulation of plasma characteristics. For instance, modeling of the Spallation Neutron Source (SNS) internal antenna H(-) source has indicated that a large plasma velocity is induced near bends in the antenna where structural failures are often observed. This could lead to improved designs and ion source performance based on simulation and modeling. However, there are significant separations of time and spatial scales inherent to Rf-driven plasma ion sources, which makes it difficult to model ion sources with explicit, kinetic Particle-In-Cell (PIC) simulation codes. In particular, if both electron and ion motions are to be explicitly modeled, then the simulation time step must be very small, and total simulation times must be large enough to capture the evolution of the plasma ions, as well as extending over many Rf periods. Additional physics processes such as plasma chemistry and surface effects such as secondary electron emission increase the computational requirements in such a way that even fully parallel explicit PIC models cannot be used. One alternative method is to develop fluid-based codes coupled with electromagnetics in order to model ion sources. Time-domain fluid models can simulate plasma evolution, plasma chemistry, and surface physics models with reasonable computational resources by not explicitly resolving electron motions, which thereby leads to an increase in the time step. This is achieved by solving fluid motions coupled with electromagnetics using reduced-physics models, such as single-temperature magnetohydrodynamics (MHD), extended, gas dynamic, and Hall MHD, and two-fluid MHD models. We show recent results on modeling the internal antenna H(-) ion source for the SNS at Oak Ridge National Laboratory using the fluid plasma modeling code USim. We compare demonstrate plasma temperature equilibration in two-temperature MHD models for the SNS source and present simulation results demonstrating plasma evolution over many Rf periods for different plasma temperatures. We perform the calculations in parallel, on unstructured meshes, using finite-volume solvers in order to obtain results in reasonable time.

System and method for generating steady state confining current for a toroidal plasma fusion reactor

DOEpatents

Fisch, Nathaniel J.

1981-01-01

A system for generating steady state confining current for a toroidal plasma fusion reactor providing steady-state generation of the thermonuclear power. A dense, hot toroidal plasma is initially prepared with a confining magnetic field with toroidal and poloidal components. Continuous wave RF energy is injected into said plasma to establish a spectrum of traveling waves in the plasma, where the traveling waves have momentum components substantially either all parallel, or all anti-parallel to the confining magnetic field. The injected RF energy is phased to couple to said traveling waves with both a phase velocity component and a wave momentum component in the direction of the plasma traveling wave components. The injected RF energy has a predetermined spectrum selected so that said traveling waves couple to plasma electrons having velocities in a predetermined range .DELTA.. The velocities in the range are substantially greater than the thermal electron velocity of the plasma. In addition, the range is sufficiently broad to produce a raised plateau having width .DELTA. in the plasma electron velocity distribution so that the plateau electrons provide steady-state current to generate a poloidal magnetic field component sufficient for confining the plasma. In steady state operation of the fusion reactor, the fusion power density in the plasma exceeds the power dissipated in the plasma.

System and method for generating steady state confining current for a toroidal plasma fusion reactor

DOEpatents

Bers, Abraham

1981-01-01

A system for generating steady state confining current for a toroidal plasma fusion reactor providing steady-state generation of the thermonuclear power. A dense, hot toroidal plasma is initially prepared with a confining magnetic field with toroidal and poloidal components. Continuous wave RF energy is injected into said plasma to estalish a spectrum of traveling waves in the plasma, where the traveling waves have momentum components substantially either all parallel, or all anti-parallel to the confining magnetic field. The injected RF energy is phased to couple to said traveling waves with both a phase velocity component and a wave momentum component in the direction of the plasma traveling wave components. The injected RF energy has a predetermined spectrum selected so that said traveling waves couple to plasma electrons having velocities in a predetermined range .DELTA.. The velocities in the range are substantially greater than the thermal electron velocity of the plasma. In addition, the range is sufficiently broad to produce a raised plateau having width .DELTA. in the plasma electron velocity distribution so that the plateau electrons provide steady-state current to generate a poloidal magnetic field component sufficient for confining the plasma. In steady state operation of the fusion reactor, the fusion power density in the plasma exceeds the power dissipated inthe plasma.

Theoretical and experimental studies of a planar inductive coupled rf plasma source as the driver in simulator facility (ISTAPHM) of interactions of waves with the edge plasma on tokamaks

NASA Astrophysics Data System (ADS)

Ghanei, V.; Nasrabadi, M. N.; Chin, O.-H.; Jayapalan, K. K.

2017-11-01

This research aims to design and build a planar inductive coupled RF plasma source device which is the driver of the simulator project (ISTAPHM) of the interactions between ICRF Antenna and Plasma on tokamak by using the AMPICP model. For this purpose, a theoretical derivation of the distribution of the RF magnetic field in the plasma-filled reactor chamber is presented. An experimental investigation of the field distributions is described and Langmuir measurements are developed numerically. A comparison of theory and experiment provides an evaluation of plasma parameters in the planar ICP reactor. The objective of this study is to characterize the plasma produced by the source alone. We present the results of the first analysis of the plasma characteristics (plasma density, electron temperature, electron-ion collision frequency, particle fluxes and their velocities, stochastic frequency, skin depth and electron energy distribution functions) as function of the operating parameters (injected power, neutral pressure and magnetic field) as measured with fixed and movable Langmuir probes. The plasma is currently produced only by the planar ICP. The exact goal of these experiments is that the produced plasma by external source can exist as a plasma representative of the edge of tokamaks.

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials.

PubMed

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool

2018-05-29

Hexagonal boron nitride (h-BN) is considered an ideal template for electronics based on two-dimensional (2D) materials, owing to its unique properties as a dielectric film. Most studies involving h-BN and its application to electronics have focused on its synthesis using techniques such as chemical vapor deposition, the electrical analysis of its surface state, and the evaluation of its performance. Meanwhile, processing techniques including etching methods have not been widely studied despite their necessity for device fabrication processes. In this study, we propose the atomic-scale etching of h-BN for integration into devices based on 2D materials, using Ar plasma at room temperature. A controllable etching rate, less than 1 nm min-1, was achieved and the low reactivity of the Ar plasma enabled the atomic-scale etching of h-BN down to a monolayer in this top-down approach. Based on the h-BN etching technique for achieving electrical contact with the underlying molybdenum disulfide (MoS2) layer of an h-BN/MoS2 heterostructure, a top-gate MoS2 field-effect transistor (FET) with h-BN gate dielectric was fabricated and characterized by high electrical performance based on the on/off current ratio and carrier mobility.

Generation of X-rays and neutrons with a RF-discharge

NASA Technical Reports Server (NTRS)

Schneider, R. T.

1982-01-01

An experimental study concerning disk shaped plasma structures was performed. Such disk-shaped structures can be obtained using an rf discharge in hydrogen. The applied frequency was 1-2 Mhz. In case of operation in deuterium it was found that the discharge emits neutrons and X-rays, although the applied voltage is only 2 kV. This phenomenon was explained by assuming formation of plasma cavitons which are surrounded by high electric fields. The condition for formation of these cavitons is that the applied rf frequency is equal to the plasma frequency. The ions trapped in these resonance structures acquire sufficient energy that they can undergo fusion reactions with the ions in the surrounding gas.

Cl atom recombination on silicon oxy-chloride layers deposited on chamber walls in chlorine-oxygen plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khare, Rohit; Srivastava, Ashutosh; Donnelly, Vincent M.

2012-09-15

Chlorine atom recombination coefficients were measured on silicon oxy-chloride surfaces deposited in a chlorine inductively coupled plasma (ICP) with varying oxygen concentrations, using the spinning wall technique. A small cylinder embedded in the walls of the plasma reactor chamber was rapidly rotated, repetitively exposing its surface to the plasma chamber and a differentially pumped analysis chamber housing a quadruple mass spectrometer for line-of-sight desorbing species detection, or an Auger electron spectrometer for in situ surface analysis. The spinning wall frequency was varied from 800 to 30 000 rpm resulting in a detection time, t (the time a point on themore » surface takes to rotate from plasma chamber to the position facing the mass or Auger spectrometer), of {approx}1-40 ms. Desorbing Cl{sub 2}, due to Langmuir-Hinshelwood (LH) Cl atom recombination on the reactor wall surfaces, was detected by the mass spectrometer and also by a pressure rise in one of the differentially pumped chambers. LH Cl recombination coefficients were calculated by extrapolating time-resolved desorption decay curves to t = 0. A silicon-covered electrode immersed in the plasma was either powered at 13 MHz, creating a dc bias of -119 V, or allowed to electrically float with no bias power. After long exposure to a Cl{sub 2} ICP without substrate bias, slow etching of the Si wafer coats the chamber and spinning wall surfaces with an Si-chloride layer with a relatively small amount of oxygen (due to a slow erosion of the quartz discharge tube) with a stoichiometry of Si:O:Cl = 1:0.38:0.38. On this low-oxygen-coverage surface, any Cl{sub 2} desorption after LH recombination of Cl was below the detection limit. Adding 5% O{sub 2} to the Cl{sub 2} feed gas stopped etching of the Si wafer (with no rf bias) and increased the oxygen content of the wall deposits, while decreasing the Cl content (Si:O:Cl = 1:1.09:0.08). Cl{sub 2} desorption was detectable for Cl recombination on the spinning wall surface coated with this layer, and a recombination probability of {gamma}{sub Cl} = 0.03 was obtained. After this surface was conditioned with a pure oxygen plasma for {approx}60 min, {gamma}{sub Cl} increased to 0.044 and the surface layer was slightly enriched in oxygen fraction (Si:O:Cl = 1:1.09:0.04). This behavior is attributed to a mechanism whereby Cl LH recombination occurs mainly on chlorinated oxygen sites on the silicon oxy-chloride surface, because of the weak Cl-O bond compared to the Cl-Si bond.« less

Cleaning of inner vacuum surfaces in the Uragan-3M facility by radio-frequency discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lozin, A. V., E-mail: alexlozin@meta.ua; Moiseenko, V. E.; Grigor’eva, L. I.

2013-08-15

A method for cleaning vacuum surfaces by a low-temperature (T{sub e} ∼ 10 eV) relatively dense (n{sub e} ≈ 10{sup 12} cm{sup −3}) plasma of an RF discharge was developed and successfully applied at the Uragan-3M torsatron. The convenience of the method is that it can be implemented with the same antenna system and RF generators that are used to produce and heat the plasma in the operating mode and does not require retuning the frequencies of the antennas and RF generators. The RF discharge has a high efficiency from the standpoint of cleaning vacuum surfaces. After performing a seriesmore » of cleanings by the low-temperature RF discharge plasma (about 20000 pulses), (i) the intensity of the CIII impurity line was substantially reduced, (ii) a quasi-steady operating mode with a duration of up to 50 ms, a plasma density of n{sub e} ≈ 10{sup 12} cm{sup −3}, and an electron temperature of up to T{sub e} ∼ 1 keV was achieved, and (iii) mass spectrometric analysis of the residual gas in the chamber indicated a significant reduction in the impurity content.« less

ORNL diagnostic and modeling development for LAPD ICRF experiments

NASA Astrophysics Data System (ADS)

Isler, R. C.; Caughman, J. B. O.; Lau, C.; Martin, E. H.; Perkins, R. J.; Compernolle, B. Van; Vincena, S.; Tripathi, S. K. P.; Gekelman, W.

2017-10-01

PPPL, UCLA, and ORNL scientists have recently collaborated on a three week ICRF campaign at the upgraded LAPD device to study near field-plasma interactions associated with a single strap antenna driven at 2.38 MHz with 100 kW of RF power. This poster highlights ORNL involvement through implementation of the following diagnostics: an optical emission probe to measure neutral density, a retarding field energy analyzer to measure fast ions, phase locked imaging to measure line integrated RF-driven optical emission fluctuations, and an RF compensated triple Langmuir probe to measure density and temperature. To interpret the results of the experimental campaign a 3D cold plasma finite element model with realistic antenna and vacuum vessel geometry was developed in COMSOL. A summary of these results will be discussed. Highlights include a proof of principle localized and spatially resolved measurement of the neutral density, a strong increase in RF-driven optical emission fluctuations directly in front of the RF antenna strap, a shift in fast ion energies near the plasma edge, and qualitative agreement between the COMSOL cold plasma model with the various diagnostics. Funded by the DOE OFES (DE-AC05-00OR22725, DE-AC02-09CH11466, and DE-FC02-07ER54918) and the Univ. of California (12-LR-237124).

Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopy

NASA Technical Reports Server (NTRS)

Perry, Joseph W.; Shing, Y. H.; Allevato, C. E.

1988-01-01

In situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.

High Speed and High Functional Inverter Power Supplies for Plasma Generation and Control, and their Performance

NASA Astrophysics Data System (ADS)

Uesugi, Yoshihiko; Razzak, Mohammad A.; Kondo, Kenji; Kikuchi, Yusuke; Takamura, Shuichi; Imai, Takahiro; Toyoda, Mitsuhiro

The Rapid development of high power and high speed semiconductor switching devices has led to their various applications in related plasma fields. Especially, a high speed inverter power supply can be used as an RF power source instead of conventional linear amplifiers and a power supply to control the magnetic field in a fusion plasma device. In this paper, RF thermal plasma production and plasma heating experiments are described emphasis placed on using a static induction transistor inverter at a frequency range between 200 kHz and 2.5 MHz as an RF power supply. Efficient thermal plasma production is achieved experimentally by using a flexible and easily operated high power semiconductor inverter power supply. Insulated gate bipolar transistor (IGBT) inverter power supplies driven by a high speed digital signal processor are applied as tokamak joule coil and vertical coil power supplies to control plasma current waveform and plasma equilibrium. Output characteristics, such as the arbitrary bipolar waveform generation of a pulse width modulation (PWM) inverter using digital signal processor (DSP) can be successfully applied to tokamak power supplies for flexible plasma current operation and fast position control of a small tokamak.

Full Wave Parallel Code for Modeling RF Fields in Hot Plasmas

NASA Astrophysics Data System (ADS)

Spencer, Joseph; Svidzinski, Vladimir; Evstatiev, Evstati; Galkin, Sergei; Kim, Jin-Soo

2015-11-01

FAR-TECH, Inc. is developing a suite of full wave RF codes in hot plasmas. It is based on a formulation in configuration space with grid adaptation capability. The conductivity kernel (which includes a nonlocal dielectric response) is calculated by integrating the linearized Vlasov equation along unperturbed test particle orbits. For Tokamak applications a 2-D version of the code is being developed. Progress of this work will be reported. This suite of codes has the following advantages over existing spectral codes: 1) It utilizes the localized nature of plasma dielectric response to the RF field and calculates this response numerically without approximations. 2) It uses an adaptive grid to better resolve resonances in plasma and antenna structures. 3) It uses an efficient sparse matrix solver to solve the formulated linear equations. The linear wave equation is formulated using two approaches: for cold plasmas the local cold plasma dielectric tensor is used (resolving resonances by particle collisions), while for hot plasmas the conductivity kernel is calculated. Work is supported by the U.S. DOE SBIR program.

Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, Daniel K., E-mail: daniel.simon@namlab.com; Schenk, Tony; Dirnstorfer, Ingo

2016-03-15

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{supmore » −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.« less

Numerical analysis of effects of ion-neutral collision processes on RF ICP discharge

NASA Astrophysics Data System (ADS)

Nishida, K.; Mattei, S.; Lettry, J.; Hatayama, A.

2018-01-01

The discharge process of a radiofrequency (RF) inductively coupled plasma (ICP) has been modeled by an ElectroMagnetic Particle-in-Cell Monte Carlo Collision method (EM PIC-MCC). Although the simulation had been performed by our previous model to investigate the discharge mode transition of the RF ICP from a kinetic point of view, the model neglected the collision processes of ions (H+ and H2+) with neutral particles. In this study, the RF ICP discharge process has been investigated by the latest version of the model which takes the ion-neutral collision processes into account. The basic characteristics of the discharge mode transition provided by the previous model have been verified by the comparison between the previous and present results. As for the H-mode discharge regime, on the other hand, the ion-neutral collisions play an important role in evaluating the growth of the plasma. Also, the effect of the ion-neutral collisions on the kinetic feature of the plasma has been investigated, which has highlighted the importance of kinetic perspective for modeling the RF ICP discharge.

Modeling ECCD/MHD coupling using NIMROD, GENRAY, and the Integrated Plasma Simulator

NASA Astrophysics Data System (ADS)

Jenkins, Thomas G.; Schnack, D. D.; Sovinec, C. R.; Hegna, C. C.; Callen, J. D.; Ebrahimi, F.; Kruger, S. E.; Carlsson, J.; Held, E. D.; Ji, J.-Y.; Harvey, R. W.; Smirnov, A. P.; Elwasif, W. R.

2009-11-01

We summarize ongoing theoretical/numerical work relevant to the development of a self--consistent framework for the inclusion of RF effects in fluid simulations; specifically, we consider the stabilization of resistive tearing modes in tokamak geometry by electron cyclotron current drive. In the fluid equations, ad hoc models for the RF--induced currents have previously been shown to shrink or altogether suppress the nonlinearly saturated magnetic islands generated by tearing modes; progress toward a self--consistent model is reported. The interfacing of the NIMROD [1] code with the GENRAY/CQL3D [2] codes (which calculate RF propagation and energy/momentum deposition) via the Integrated Plasma Simulator (IPS) framework [3] is explained, RF-induced rational surface motion and the equilibration of RF--induced currents over plasma flux surfaces are investigated, and the efficient reduction of saturated island widths through time modulation and spatial localization of the ECCD is explored. [1] Sovinec et al., JCP 195, 355 (2004) [2]www.compxco.com [3] Both the IPS development and the research presented here are part of the SWIM project. Funded by U.S. DoE.

Wide band laser-plasma soft X-ray source using a gas puff target for direct photo-etching of polymers

NASA Astrophysics Data System (ADS)

Bartnik, Andrzej; Fiedorowicz, Henryk; Jarocki, Roman; Kostecki, Jerzy; Rakowski, Rafał; Szczurek, Mirosław

2005-09-01

Organic polymers (PMMA, PTFE, PET, and PI) are considered as the important materials in microengineering, especially for biological and medical applications. Micromachining of such materials is possible with the use of different techniques that involve electromagnetic radiation or charged particle beams. Another possibility of high aspect ratio micromachining of PTFE is direct photo-etching using synchrotron radiation. X-ray and ultraviolet radiation from other sources, for micromachining of materials by direct photo-etching can be also applied. In this paper we present the results of investigation of a wide band soft X-ray source and its application for direct photo-etching of organic polymers. X-ray radiation in the wavelength range from about 3 nm to 20 nm was produced as a result of irradiation of a double-stream gas puff target with laser pulses of energy 0.8 J and time duration of about 3 ns. The spectra, plasma size and absolute energies of soft X-ray pulses for different gas puff targets were measured. Photo-etching process of polymers irradiated with the use of the soft X-ray radiation was analyzed and investigated. Samples of organic polymers were placed inside a vacuum chamber of the x-ray source, close to the gas puff target at the distance of about 2 cm from plasmas created by focused laser pulses. A fine metal grid placed in front of the samples was used as a mask to form structures by x-ray ablation. The results of photo-etching process for several minutes exposition with l0Hz repetition rate were presented. High ablation efficiency was obtained with the use of the gas puff target containing xenon surrounded by helium.