ZnO:Al Thin Film Gas Sensor for Detection of Ethanol Vapor

PubMed Central

Chou, Shih Min; Teoh, Lay Gaik; Lai, Wei Hao; Su, Yen Hsun; Hon, Min Hsiung

2006-01-01

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ∼20 at an operating temperature of 250°C. The high sensitivity, fast recovery, and reliability suggest that ZnO:Al thin film prepared by RF magnetron sputtering can be used for ethanol vapor gas sensing.

Effect of sputtering power on MgF2 thin films deposited by sputtering technique under fluorine trapping

NASA Astrophysics Data System (ADS)

De, Rajnarayan; Haque, S. Maidul; Tripathi, S.; Prathap, C.; Rao, K. Divakar; Sahoo, N. K.

2016-05-01

A non-conventional magnetron sputtering technique was explored to deposit magnesium fluoride thin films using the concept of fluorine gas trapping without the introduction of additional fluorine gas flow inside the chamber. The effect of magnetron power from 50 W to 250 W has been explored on structural, optical and physical properties of the samples. Polycrystalline nature with tetragonal crystallinity of the films has been confirmed by GIXRD measurements along with thickness dependency. Monotonic increase of attenuation coefficient (k) with RF power has been explained in terms of target compound dissociation probability. In conclusion, with fluorine trapping method, the samples deposited at lower RF powers (<100 W) are found to be more suitable for optical applications.

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

NASA Astrophysics Data System (ADS)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 < x < 0.92) thin films made by radiofrequency (13.56 MHz) cathodic magnetron sputtering from composite Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

Characterization on RF magnetron sputtered niobium pentoxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Usha, N.; Sivakumar, R., E-mail: krsivakumar1979@yahoo.com; Sanjeeviraja, C.

2014-10-15

Niobium pentoxide (Nb{sub 2}O{sub 5}) thin films with amorphous nature were deposited on microscopic glass substrates at 100°C by rf magnetron sputtering technique. The effect of rf power on the structural, morphological, optical, and vibrational properties of Nb{sub 2}O{sub 5} films have been investigated. Optical study shows the maximum average transmittance of about 87% and the optical energy band gap (indirect allowed) changes between 3.70 eV and 3.47 eV. AFM result indicates the smooth surface nature of the samples. Photoluminescence measurement showed the better optical quality of the deposited films. Raman spectra show the LO-TO splitting of Nb-O stretching ofmore » Nb{sub 2}O{sub 5} films.« less

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1984-01-01

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Infrared metamaterial by RF magnetron sputtered ZnO/Al:ZnO multilayers

NASA Astrophysics Data System (ADS)

Santiago, Kevin C.; Mundle, Rajeh; White, Curtis; Bahoura, Messaoud; Pradhan, Aswini K.

2018-03-01

Hyperbolic metamaterials create artificial anisotropy using metallic wires suspended in dielectric media or alternating layers of a metal and dielectric (Type I or Type II). In this study we fabricated ZnO/Al:ZnO (AZO) multilayers by the RF magnetron sputtering deposition technique. Our fabricated multilayers satisfy the requirements for a type II hyperbolic metamaterial. The optical response of individual AZO and ZnO films, as well as the multilayered film were investigated via UV-vis-IR transmittance and spectroscopic ellipsometry. The optical response of the multilayered system is calculated using the nonlocal-corrected Effective Medium Approximation (EMA). The spectroscopic ellipsometry data of the multilayered system was modeled using a uniaxial material model and EMA model. Both theoretical and experimental studies validate the fabricated multilayers undergo a hyperbolic transition at a wavelength of 2.2 μm. To our knowledge this is the first AZO/ZnO type II hyperbolic metamaterial system fabricated by magnetron sputtering deposition method.

Synthesis and properties of nanocrystalline copper indium oxide thin films deposited by Rf magnetron sputtering.

PubMed

Singh, Mandeep; Singh, V N; Mehta, B R

2008-08-01

Nanocrystalline copper indium oxide (CuInO2) thin films with particle size ranging from 25 nm to 71 nm have been synthesized from a composite target using reactive Rf magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) combined with glancing angle X-ray diffraction (GAXRD) analysis confirmed the presence of delafossite CuInO2 phase in these films. The optical absorption studies show the presence of two direct band gaps at 3.3 and 4.3 eV, respectively. The resistance versus temperature measurements show thermally activated hopping with activation energy of 0.84 eV to be the conduction mechanism.

Rietveld-refinement and optical study of the Fe doped ZnO thin film by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, Arun; Dhiman, Pooja; Singh, M.

2017-05-01

Fe Doped ZnO Dilute Magnetic Semiconductor thin film prepared by RF magnetron sputtering on glass substrate and Influence of 3% Fe-doping on structural and Optical properties has been studied. The Rietveld-refinement analysis shows that Fe doping has a significant effect on crystalline structure, grain size and strain in the thin film. Two dimensional and three-dimensional atom probe tomography of the thin film shows that Fe ions are randomly distributed which is supported by Xray Diffraction (XRD). Fe-doping is found to effectively modify the band gap energy up to 3.5 eV.

Influence of Substrate Temperature on Structural, Electrical and Optical Properties of Ito Thin Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

He, Bo; Zhao, Lei; Xu, Jing; Xing, Huaizhong; Xue, Shaolin; Jiang, Meng

2013-10-01

In this paper, we investigated indium-tin-oxide (ITO) thin films on glass substrates deposited by RF magnetron sputtering using ceramic target to find the optimal condition for fabricating optoelectronic devices. The structural, electrical and optical properties of the ITO films prepared at various substrate temperatures were investigated. The results indicate the grain size increases with substrate temperature increases. As the substrate temperature grew up, the resistivity of ITO films greatly decreased. The ITO film possesses high quality in terms of electrode functions, when substrate temperature is 480°C. The resistivity is as low as 9.42 × 10-5 Ω•cm, while the carrier concentration and mobility are as high as 3.461 × 1021 atom/cm3 and 19.1 cm2/Vṡs, respectively. The average transmittance of the film is about 95% in the visible region. The novel ITO/np-Silicon frame, which prepared by RF magnetron sputtering at 480°C substrate temperature, can be used not only for low-cost solar cell, but also for high quantum efficiency of UV and visible lights enhanced photodetector for various applications.

Cleaning of HT-7 Tokamak Exposed First Mirrors by Radio Frequency Magnetron Sputtering Plasma

NASA Astrophysics Data System (ADS)

Yan, Rong; Chen, Junling; Chen, Longwei; Ding, Rui; Zhu, Dahuan

2014-12-01

The stainless steel (SS) first mirror pre-exposed in the deposition-dominated environment of the HT-7 tokamak was cleaned in the newly built radio frequency (RF) magnetron sputtering plasma device. The deposition layer on the FM surface formed during the exposure was successfully removed by argon plasma with a RF power of about 80 W and a gas pressure of 0.087 Pa for 30 min. The total reflectivity of the mirrors was recovered up to 90% in the wavelength range of 300-800 nm, while the diffuse reflectivity showed a little increase, which was attributed to the increase of surface roughness in sputtering, and residual contaminants. The FMs made from single crystal materials could help to achieve a desired recovery of specular reflectivity in the future.

Processing, electrical and microwave properties of sputtered Tl-Ca-Ba-Cu-O superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Kapoor, V. J.; Chorey, C. M.; Bhasin, K. B.

1993-01-01

A reproducible fabrication process has been established for TlCaBaCuO thin films on LaAlO3 substrates by RF magnetron sputtering and post-deposition processing methods. Electrical transport properties of the thin films were measured on patterned four-probe test devices. Microwave properties of the films were obtained from unloaded Q measurements of all-superconducting ring resonators. This paper describes the processing, electrical and microwave properties of Tl2Ca1Ba2Cu2O(x) 2122-plane phase thin films.

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

NASA Astrophysics Data System (ADS)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

NASA Technical Reports Server (NTRS)

Routh, D. E.; Sharma, G. C. (Inventor)

1982-01-01

The processing of wafer devices to form multilevel interconnects for microelectronic circuits is described. The method is directed to performing the sequential steps of etching the via, removing the photo resist pattern, back sputtering the entire wafer surface and depositing the next layer of interconnect material under common vacuum conditions without exposure to atmospheric conditions. Apparatus for performing the method includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a DC magnetron sputtering system. A gas inlet is provided in the chamber for the introduction of various gases to the vacuum chamber and the creation of various gas plasma during the sputtering steps.

Sputtered deposited nanocrystalline ZnO films: A correlation between electrical, optical and microstructural properties

NASA Astrophysics Data System (ADS)

Lee, J.; Gao, W.; Li, Z.; Hodgson, M.; Metson, J.; Gong, H.; Pal, U.

2005-05-01

Zinc oxide thin films were prepared by dc (direct current) and rf (radio frequency) magnetron sputtering on glass substrates. ZnO films produced by dc sputtering have a high resistance, while the films produced using rf sputtering are significantly more conductive. While the conductive films have a compact nodular surface morphology, the resistive films have a relatively porous surface with columnar structures in cross section. Compared to the dc sputtered films, rf sputtered films have a microstructure with smaller d spacing, lower internal stress, higher band gap energy and higher density. Dependence of conductivity on the deposition technique and the resulting d spacing , stress, density, band gap, film thickness and Al doping are discussed. Correlations between the electrical conductivity, microstructural parameters and optical properties of the films have been made.

Comparative study of RF reactive magnetron sputtering and sol-gel deposition of UV induced superhydrophilic TiOx thin films

NASA Astrophysics Data System (ADS)

Vrakatseli, V. E.; Amanatides, E.; Mataras, D.

2016-03-01

TiOx and TiOx-like thin films were deposited on PEEK (Polyether ether ketone) substrates by low-temperature RF reactive magnetron sputtering and the sol-gel method. The resulting films were compared in terms of their properties and photoinduced hydrophilicity. Both techniques resulted in uniform films with good adhesion that can be switched to superhydrophilic after exposure to UVA radiation for similar time periods. In addition, the sputtered films can also be activated and switched to superhydrophilic by natural sunlight due to the higher absorption in the visible spectrum compared to the sol-gel films. On the other hand, the as deposited sol-films remain relatively hydrophilic for a longer time in dark compared to the sputtered film due to the differences in the morphology and the porosity of the two materials. Thus, depending on the application, either method can be used in order to achieve the desirable TiOx properties.

Efficient planar n-i-p type heterojunction flexible perovskite solar cells with sputtered TiO2 electron transporting layers.

PubMed

Mali, Sawanta S; Hong, Chang Kook; Inamdar, A I; Im, Hyunsik; Shim, Sang Eun

2017-03-02

The development of hybrid organo-lead trihalide perovskite solar cells (PSCs) comprising an electron transporting layer (ETL), a perovskite light absorber and a hole transporting layer (HTL) has received significant attention for their potential in efficient PSCs. However, the preparation of a compact and uniform ETL and the formation of a uniform light absorber layer suffer from a high temperature processing treatment and the formation of unwanted perovskite islands, respectively. A low temperature/room temperature processed ETL is one of the best options for the fabrication of flexible PSCs. In the present work, we report the implementation of a room temperature processed compact TiO 2 ETL and the synthesis of extremely uniform flexible planar PSCs based on methylammonium lead mixed halides MAPb(I 1-x Br x ) 3 (x = 0.1) via RF-magnetron sputtering and a toluene dripping treatment, respectively. The compact TiO 2 ETLs with different thicknesses (30 to 100 nm) were directly deposited on a flexible PET coated ITO substrate by varying the RF-sputtering time and used for the fabrication of flexible PSCs. The photovoltaic properties revealed that flexible PSC performance is strongly dependent on the TiO 2 ETL thickness. The open circuit voltage (V OC ) and fill factor (FF) are directly proportional to the TiO 2 ETL thickness while the 50 nm thick TiO 2 ETL shows the highest current density (J SC ) of 20.77 mA cm -2 . Our controlled results reveal that the room temperature RF-magnetron sputtered 50 nm-thick TiO 2 ETL photoelectrode exhibits a power conversion efficiency (PCE) in excess of 15%. The use of room temperature synthesis of the compact TiO 2 ETL by RF magnetron sputtering results in an enhancement of the device performance for cells prepared on flexible substrates. The champion flexible planar PSC based on this architecture exhibited a promising power conversion efficiency as high as 15.88%, featuring a high FF of 0.69 and V OC of 1.108 V with a negligible hysteresis under AM 1.5 G illumination. Furthermore, the mechanical bending stability revealed that the fabricated devices show stable PCE up to 200 bending cycles. The interface properties revealed that the 50 nm thick TiO 2 ETL provides superior charge injection characteristics and low internal resistance. The present work provides a simplistic and reliable approach for the fabrication of highly efficient stable flexible perovskite solar cells.

Structural and optical characterization of terbium doped ZnGa{sub 2}O{sub 4} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Somasundaram, K.; Department of Physics, Nallamuthu Gounder Mahalingam College, Pollachi-642001; Girija, K. G., E-mail: kgirija@barc.gov.in

2016-05-23

Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor (21 nm) has been synthesized via low temperature polyol route and subsequently thin films of the same were deposited on glass and ITO substrates by RF magnetron sputtering. The films were characterized by X-ray Diffraction and luminescence measurements. The XRD pattern showed that Tb{sup 3+} doped ZnGa{sub 2}O{sub 4} nanophosphor has a cubic spinel phase. Luminescence behavior of the nanophosphor and as deposited sputtered film was investigated. The PL emission spectra of nanophosphor gave a broad ZnGa{sub 2}O{sub 4} host emission band along with a strong terbium emission and the thin films showedmore » only broad host emission band and there was no terbium ion emission.« less

Enhanced electrical and optical properties of room temperature deposited Aluminium doped Zinc Oxide (AZO) thin films by excimer laser annealing

NASA Astrophysics Data System (ADS)

El hamali, S. O.; Cranton, W. M.; Kalfagiannis, N.; Hou, X.; Ranson, R.; Koutsogeorgis, D. C.

2016-05-01

High quality transparent conductive oxides (TCOs) often require a high thermal budget fabrication process. In this study, Excimer Laser Annealing (ELA) at a wavelength of 248 nm has been explored as a processing mechanism to facilitate low thermal budget fabrication of high quality aluminium doped zinc oxide (AZO) thin films. 180 nm thick AZO films were prepared by radio frequency magnetron sputtering at room temperature on fused silica substrates. The effects of the applied RF power and the sputtering pressure on the outcome of ELA at different laser energy densities and number of pulses have been investigated. AZO films deposited with no intentional heating at 180 W, and at 2 mTorr of 0.2% oxygen in argon were selected as the optimum as-deposited films in this work, with a resistivity of 1×10-3 Ω.cm, and an average visible transmission of 85%. ELA was found to result in noticeably reduced resistivity of 5×10-4 Ω.cm, and enhancing the average visible transmission to 90% when AZO is processed with 5 pulses at 125 mJ/cm2. Therefore, the combination of RF magnetron sputtering and ELA, both low thermal budget and scalable techniques, can provide a viable fabrication route of high quality AZO films for use as transparent electrodes.

Optical characterization of Mg-doped ZnO thin films deposited by RF magnetron sputtering technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Satyendra Kumar; Tripathi, Shweta; Hazra, Purnima

2016-05-06

This paper reports the in-depth analysis on optical characteristics of magnesium (Mg) doped zinc oxide (ZnO) thin films grown on p-silicon (Si) substrates by RF magnetron sputtering technique. The variable angle ellipsometer is used for the optical characterization of as-deposited thin films. The optical reflectance, transmission spectra and thickness of as-deposited thin films are measured in the spectral range of 300-800 nm with the help of the spectroscopic ellipsometer. The effect of Mg-doping on optical parameters such as optical bandgap, absorption coefficient, absorbance, extinction coefficient, refractive Index and dielectric constant for as-deposited thin films are extracted to show its application inmore » optoelectronic and photonic devices.« less

FAST TRACK COMMUNICATION: Ferroelectric properties and dielectric responses of multiferroic BiFeO3 films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Qi, Xiaoding; Tsai, Po-Chou; Chen, Yi-Chun; Ko, Cheng-Hung; Huang, Jung-Chun-Andrew; Chen, In-Gann

2008-12-01

Multiferroic BiFeO3 films have been grown on LaNiO3-x/SrTiO3 and Pt/Si substrates by RF magnetron sputtering. The films showed fully saturated ferroelectric hysteresis loops with large remanent polarization of 64 µC cm-2, suitable for most device applications. Piezoresponse force microscopy confirmed that the films were electrically writable. In addition to the high-frequency intrinsic dielectric loss of epitaxial films, the Argand diagram also revealed low-frequency contributions from both dc conductivity and interfacial polarization at electrodes. For polycrystalline films on Pt/Si, the dominant contribution to dielectric loss was space charge polarization at grain boundaries.

Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, Lei

Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

Tribological characterization of TiN coatings prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

2018-05-01

Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

Effect of deposition parameters and heat-treatment on the microstructure, mechanical and electrochemical properties of hydroxyapatite/titanium coating deposited on Ti6Al4V by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Qi, Jianwei; Chen, Zhangbo; Han, Wenjun; He, Danfeng; Yang, Yiming; Wang, Qingliang

2017-09-01

Functionally graded HA/Ti coatings were deposited on silicon and Ti6Al4V substrate by radio-frequency (RF) magnetron sputtering. The effect of RF-power, negative bias and heat-treatment on the microstructure, mechanical and electrochemical properties of the coatings were characterized by SEM, XRD, FTIR, AFM Nanoindentation and electrochemical workstation. The obtained results showed that the as-deposited HA/Ti coatings were characteristic of amorphous structure, which transformed into a crystal structure after heat-treatment, and reformed O-H peak. The content of crystallization was increasing with the increase of negative bias. A dense, homogenous, smooth and featured surface, and columnar cross-section structure was observed in SEM observation. AFM results showed that the surface roughness became higher after heat-treatment, and increased with increasing RF-power. The mechanical test indicated that the coating had a higher nanohardness (9.1 GPa) in the case of  -100 V and 250 W than that of Ti6Al4V substrate, and a critical load as high as 17  ±  3.5 N. The electrochemical test confirmed the HA/Ti coating served as a stable protecting barrier in improving the corrosion resistance, which the corrosion current density was 1.3% of Ti6Al4V, but it was significantly influenced by RF-power and negative bias. The contact angle test demonstrated that all the coatings exhibited favorable hydrophilic properties, and it decreased by 20-25% compared to that untreated samples. Thus all results indicated that magnetron sputtering is a promising way for fabricating a better biocompatible ceramic coating by adjusting deposition parameters and post-deposition heat treatments.

Bias current dependence of resistivity in Co0.4Fe0.4B0.2 ultrathin film prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Mandal, Snehal; Mazumdar, Dipak; Das, I.

2018-04-01

Ultrathin film of Co0.4Fe0.4B0.2 was prepared on p-type Si (100) substrate by RF magnetron sputtering. X-Ray Reflectivity and Atomic Force Microscopy measurements were performed to estimate the thickness and surface roughness of the film. Electrical transport measurements were performed by four-probe method in a current-in-plane (CIP) geometry. Presence of non-linearity in the current-voltage (I-V) characteristics was observed at higher current range. The electrical resistivity was found to change by several orders of magnitude (105) by changing the bias current from nano-ampere (nA) to milli-ampere (mA) range. This bias current dependence of the resistivity has been explained by different transport mechanisms.

Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Liu, Shiu-Jen; Su, Yu-Tai; Hsieh, Juang-Hsin

2014-03-01

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

2016-05-23

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less

Thickness and surface roughness study of co-sputtered nanostructured alumina/tungsten (Al2O3/W) thin films

NASA Astrophysics Data System (ADS)

Naveen, A.; Krishnamurthy, L.; Shridhar, T. N.

2018-04-01

Tungsten (W) and Alumina (Al2O3) thin films have been developed using co-sputtering technique on SS304, Copper (Cu) and Glass slides using Direct Current magnetron sputtering (DC) and Radio Frequency (RF) magnetron sputtering methods respectively. Central Composite Design (CCD) method approach has been adopted to determine the number of experimental plans for deposition and DC power, RF power and Argon gas flow rate have been input parameters, each at 5 levels for development of thin films. In this research paper, study has been carried out determine the optimized condition of deposition parameters for thickness and surface roughness of the thin films. Thickness and average Surface roughness in terms of nanometer (nm) have been characterized by thickness profilometer and atomic force microscopy respectively. The maximum and minimum average thickness observed to be 445 nm and 130 respectively. The optimum deposition condition for W/Al2O3 thin film growth was determined to be at 1000 watts of DC power and 800 watts of RF power, 20 minutes of deposition time, and almost 300 Standard Cubic Centimeter(SCCM) of Argon gas flow. It was observed that average roughness difference found to be less than one nanometer on SS substrate and one nanometer on copper approximately.

Combinatorial study of low-refractive Mg-F-Si-O nano-composites deposited by magnetron co-sputtering from compound targets

NASA Astrophysics Data System (ADS)

Mertin, Stefan; Länzlinger, Tony; Sandu, Cosmin S.; Scartezzini, Jean-Louis; Muralt, Paul

2018-03-01

Deposition of nano-composite Mg-F-Si-O films on optical grade silica glass was studied employing RF magnetron co-sputtering from magnesium fluoride (MgF2) and fused silica (SiO2) targets. The aim was to obtain a stable and reliable sputtering process for optical coatings exhibiting a refractive index lower than the one of quartz glass (1.46 at 550 nm) without adding gaseous fluorine to the deposition process. The two magnetrons were installed in a confocal way at 45° off-axis with respect to a static substrate, thus creating a lateral gradient in the thin-film composition. The deposited Mg-F-Si-O coatings were structurally analysed by electron dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The obtained films consist of MgF2 nanocrystals embedded in a SiO2-rich amorphous matrix. Spectroscopic ellipsometry and spectrophotometry measurements showed that they are highly transparent exhibiting a very-low extinction coefficient k and a refractive index n in the desired range between the one of MgF2 (1.38) and SiO2 (1.46). Films with n = 1.424 and 1.435 at 550 nm were accomplished with absorption below the detection threshold.

Ultra-hard amorphous AlMgB14 films RF sputtered onto curved substrates

NASA Astrophysics Data System (ADS)

Grishin, A. M.; Putrolaynen, V. V.; Yuzvyuk, M. H.

2017-03-01

Recently, hard AlMgB14 (BAM) coatings were deposited for the first time by RF magnetron sputtering using a single stoichiometric ceramic target. High target sputtering power and sufficiently short target-to-substrate distance were found to be critical processing conditions. They enabled fabrication of stoichiometric in-depth compositionally homogeneous films with the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth in 2 µm thick film (Grishin et al 2014 JETP Lett. 100 680). The narrow range of sufficiently short target-to-substrate distance makes impossible to coat non flat specimens. To achieve ultimate BAM films’ characteristics onto curved surfaces we developed two-step sputtering process. The first thin layer is deposited as a template at low RF power that facilitates a layered Frank van der Merwe mode growth of smooth film occurs. The next layer is grown at high RF target sputtering power. The affinity of subsequent flow of sputtered atoms to already evenly condensed template fosters the development of smooth film surface. As an example, we made BAM coating onto hemispherical 5 mm in diameter ball made from a hard tool steel and used as a head of a special gauge. Very smooth (6.6 nm RMS surface roughness) and hard AlMgB14 films fabricated onto commercial ball-shaped items enhance hardness of tool steel specimens by a factor of four.

Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

2017-03-01

High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

Fabrication, ultra-structure characterization and in vitro studies of RF magnetron sputter deposited nano-hydroxyapatite thin films for biomedical applications

NASA Astrophysics Data System (ADS)

Surmeneva, Maria A.; Surmenev, Roman A.; Nikonova, Yulia A.; Selezneva, Irina I.; Ivanova, Anna A.; Putlyaev, Valery I.; Prymak, Oleg; Epple, Matthias

2014-10-01

A series of nanostructured low-crystalline hydroxyapatite (HA) coatings averaging 170, 250, and 440 nm in thickness were deposited onto previously etched titanium substrates through radio-frequency (RF) magnetron sputtering. The HA coatings were analyzed using infrared spectroscopy (FTIR), X-ray diffraction (XRD), and scanning and transmission electron microscopy (SEM and TEM). Cross sections of the thin specimens were prepared by FIB to study the microstructure of the coatings by TEM. The deposition process formed nano-scale grains, generating an amorphous layer at the substrate/coating interface and inducing the growth of a columnar grain structure perpendicular to the substrate surface. A microstructural analysis of the film confirmed that the grain size and crystallinity increased when increasing the deposition time. The nanostructured HA coatings were not cytotoxic, as proven by in vitro assays using primary dental pulp stem cells and mouse fibroblast NCTC clone L929 cells. Low-crystallinity HA coatings with different thicknesses stimulated cells to attach, proliferate and form mineralized nodules on the surface better than uncoated titanium substrates.

Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications

NASA Astrophysics Data System (ADS)

Park, Seon-Yeong; Choe, Han-Cheol

2018-02-01

In this study, Mn-coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetrons sputtering for dental applications were studied using different experimental techniques. Mn coating films were formed on Ti-29Nb-xHf alloys by a radio frequency magnetron sputtering technique for 0, 1, 3, and 5 min at 45 W. The microstructure, composition, and phase structure of the coated alloys were examined by optical microscopy, field emission scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The microstructure of Ti-29Nb alloy showed α" phase in the needle-like structure and Ti-29Nb-15Hf alloy showed β phase in the equiaxed structure. As the sputtering time increased, the circular particles of Mn coatings on the Ti-29Nb alloy increased at inside and outside surfaces. As the sputtering time increased, [Mn + Ca/P] ratio of the plasma electrolytic oxidized films in Ti- 29Nb-xHf alloys increased. The corrosion potential (Ecorr) of Mn coatings on the Ti-29Nb alloy showed higher than that of Mn coatings on the Ti-29Nb-15Hf alloy. The passive current density (Ipass) of the Mn coating on the Ti-29Nb alloy and Mn coatings on the Ti-29Nb-15Hf alloy was less noble than the non-Mn coated Ti-29Nb and Ti-29Nb-15Hf alloys surface.

RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

NASA Astrophysics Data System (ADS)

Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

2017-08-01

A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

Thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.

1994-09-01

This report describes work to develop and optimize radio-frequency (RF) sputtering for the deposition of thin films of cadmium telluride (CdTe) and related semiconductors for thin-film solar cells. Pulsed laser physical vapor deposition was also used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. The sputtering work utilized a 2-in diameter planar magnetron sputter gun. The film growth rate by RF sputtering was studied as a function of substrate temperature, gas pressure, and RF power. Complete solar cells were fabricated on tin-oxide-coated soda-lime glass substrates. Currently, work is being done to improve the open-circuit voltage by varying the CdTe-based absorber layer, and to improve the short-circuit current by modifying the CdS window layer.

Three-Dimensional, Fibrous Lithium Iron Phosphate Structures Deposited by Magnetron Sputtering.

PubMed

Bünting, Aiko; Uhlenbruck, Sven; Sebold, Doris; Buchkremer, H P; Vaßen, R

2015-10-14

Crystalline, three-dimensional (3D) structured lithium iron phosphate (LiFePO4) thin films with additional carbon are fabricated by a radio frequency (RF) magnetron-sputtering process in a single step. The 3D structured thin films are obtained at deposition temperatures of 600 °C and deposition times longer than 60 min by using a conventional sputtering setup. In contrast to glancing angle deposition (GLAD) techniques, no tilting of the substrate is required. Thin films are characterized by X-ray diffraction (XRD), Raman spectrospcopy, scanning electron microscopy (SEM), cyclic voltammetry (CV), and galvanostatic charging and discharging. The structured LiFePO4+C thin films consist of fibers that grow perpendicular to the substrate surface. The fibers have diameters up to 500 nm and crystallize in the desired olivine structure. The 3D structured thin films have superior electrochemical properties compared with dense two-dimensional (2D) LiFePO4 thin films and are, hence, very promising for application in 3D microbatteries.

Characterization of barium strontium titanate thin films on sapphire substrate prepared via RF magnetron sputtering system

NASA Astrophysics Data System (ADS)

Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.

2018-05-01

Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.

Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

2018-05-01

Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

PubMed Central

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

High energy-storage performance of 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} relaxor ferroelectric thin films prepared by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaolin; Zhang, Le; Hao, Xihong, E-mail: xhhao@imust.cn

2015-05-15

Highlights: • High-quality PMN-PT 90/10 RFE thin films were prepared by RF magnetron sputtering. • The maximum discharged density of 31.3 J/cm{sup 3} was obtained in the 750-nm-thick film. • PMN-PT RFE films might be a promising material for energy-storage application. - Abstract: 0.9Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.1PbTiO{sub 3} (PMN-PT 90/10) relaxor ferroelectric thin films with different thicknesses were deposited on the LaNiO{sub 3}/Si (100) by the radio-frequency (RF) magnetron sputtering technique. The effects of thickness and deposition temperature on the microstructure, dielectric properties and the energy-storage performance of the thin films were investigated in detail. X-ray diffraction spectra indicated thatmore » the thin films had crystallized into a pure perovskite phase with a (100)-preferred orientation after annealed at 700 °C. Moreover, all the PMN-PT 90/10 thin films showed the uniform and crack-free surface microstructure. As a result, a larger recoverable energy density of 31.3 J/cm{sup 3} was achieved in the 750-nm-thick film under 2640 kV/cm at room temperature. Thus, PMN-PT 90/10 relaxor thin films are the promising candidate for energy-storage capacitor application.« less

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126

The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate inmore » the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.« less

Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures

NASA Astrophysics Data System (ADS)

Khumtong, T.; Sukwisute, P.; Sakulkalavek, A.; Sakdanuphab, R.

2017-05-01

The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb2Te3) thin films have been investigated for thermoelectric applications. Sb2Te3 thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb2Te3 target using different sputtering pressures in the range from 4 × 10-3 mbar to 1.2 × 10-2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb2Te3 films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm-1, 6.38 × 1019 cm-3, and 3.67 cm2 V-1 s-1, respectively. The maximum power factor of 1.07 × 10-4 W m-1 K-2 was achieved for the film deposited at sputtering pressure of 1.0 × 10-2 mbar.

The influence of target erosion grade in the optoelectronic properties of AZO coatings growth by magnetron sputtering

NASA Astrophysics Data System (ADS)

Zubizarreta, C.; G-Berasategui, E.; Ciarsolo, I.; Barriga, J.; Gaspar, D.; Martins, R.; Fortunato, E.

2016-09-01

Aluminum-doped zinc oxide (AZO) transparent conductor coating has emerged as promising substitute to tin-doped indium oxide (ITO) as electrode in optoelectronic applications such as photovoltaics or light emitting diodes (LEDs). Besides its high transmission in the visible spectral region and low resistivity, AZO presents a main advantage over other candidates such as graphene, carbon nanotubes or silver nanowires; it can be deposited using the technology industrially implemented to manufacture ITO layers, the magnetron sputtering (MS). This is a productive, reliable and green manufacturing technique. But to guarantee the robustness, reproducibility and reliability of the process there are still some issues to be addressed, such as the effect and control of the target state. In this paper a thorough study of the influence of the target erosion grade in developed coatings has been performed. AZO films have been deposited from a ceramic target by RF MS. Structure, optical transmittance and electrical properties of the produced coatings have been analyzed as function of the target erosion grade. No noticeable differences have been found neither in optoelectronic properties nor in the structure of the coatings, indicating that the RF MS is a stable and consistent process through the whole life of the target.

Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Shi-na; Ma, Rui-xin; Ma, Chun-hong; Li, Dong-ran; Xiao, Yu-qin; He, Liang-wei; Zhu, Hong-min

2013-05-01

Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3.1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

Structural and morphological studies on Bi{sub 1-x}Ca{sub x}MnO{sub 3} thin films grown by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pugazhvadivu, K. S.; Santhiya, M.; Tamilarasan, K., E-mail: dr.k.tamilarasan@gmail.com

2016-05-23

Bi{sub 1-x}Ca{sub x}MnO{sub 3} (0 ≤ X ≤ 0.4) thin films are deposited on n–type Si (100) substrate at 800 °C by RF magnetron sputtering. X-ray diffraction pattern shows that the films are crystallized in monoclinic structure with C2 space group. The crystallite size and induced strain in the prepared films are measured by W-H plot. The cell parameters and texture coefficient of the films are calculated. The surface morphology of the films is examined by atomic force microscope. The study confirms the optimum level of calcium doping is 20 at. % in Bi site of BiMnO{sub 3} film, thesemore » findings pave the way for further research in the Ca modified BiMnO{sub 3} films towards device fabrication.« less

Influence of stress on the structural and dielectric properties of rf magnetron sputtered zinc oxide thin film

NASA Astrophysics Data System (ADS)

Menon, Rashmi; Sreenivas, K.; Gupta, Vinay

2008-05-01

Highly c axis oriented zinc oxide (ZnO) thin films have been prepared on 1737 Corning glass substrate by planar rf magnetron sputtering under varying pressure (10-50mTorr) and different oxygen percentage (40%-100%) in reactive gas mixtures. The as-grown ZnO thin films were found to have stress over a wide range from -6×1010to-9×107dynes/cm2. The presence of stress depends strongly on processing conditions, and films become almost stress free under a unique combination of sputtering pressure and reactive gas composition. The studies show a correlation of stress with structural and electrical properties of the ZnO thin film. The stressed films possess high electrical conductivity and exhibits strong dielectric dispersion over a wide frequency (1kHz-1MHz). The dielectric constant ɛ'(ω) of stress free ZnO film was almost frequency independent and was close to the bulk value. The measured value of dc conductivity, σdc(ω) and ac conductivity σac(ω) of stress free ZnO film was 1.3×10-9 and 6.8×10-5Ω-1cm-1, respectively. The observed variation in the structural and electrical properties of ZnO thin film with stress has been analyzed in the light of growth kinetics.

Fabrication of oriented hydroxyapatite film by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Hirata, Keishiro; Kubota, Takafumi; Koyama, Daisuke; Takayanagi, Shinji; Matsukawa, Mami

2017-08-01

Hydroxyapatite (HAp) is compatible with bone tissue and is used mainly as a bone prosthetic material, especially as the coating of implants. Oriented HAp film is expected to be a high-quality epitaxial scaffold of the neonatal bone. To fabricate highly oriented HAp thin films via the conventional plasma process, we deposited the HAp film on a Ti coated silica glass substrate using RF magnetron sputtering in low substrate temperature conditions. The X-ray diffraction pattern of the film sample consisted of an intense (002) peak, corresponding to the highly oriented HAp. The (002) peak in XRD diagrams can be attributed either to the monoclinic phase or the hexagonal phase. Pole figure analysis showed that the (002) plane grew parallel to the surface of the substrate, without inclination. Transmission Electron Microscope analysis also showed the fabrication of aligned HAp crystallites. The selected area diffraction patterns indicated the existence of monoclinic phase. The existence of hexagonal phase could not be judged. These results indicate the uniaxial films fabricated by this technique enable to be the epitaxial scaffold of the neonatal bone. This scaffold can be expected to promote connection with the surrounding bone tissue and recovery of the dynamic characteristics of the bone.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kunj, Saurabh; Sreenivas, K.

2016-05-01

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kunj, Saurabh, E-mail: saurabhkunj22@gmail.com; Sreenivas, K.

2016-05-23

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Magnetic properties of LCMO deposited films

NASA Astrophysics Data System (ADS)

Park, Seung-Iel; Jeong, Kwang Ho; Cho, Young Suk; Kim, Chul Sung

2002-04-01

La-Ca-Mn-O films were deposited with various thickness (500, 1000 and 1500°C) by RF-magnetron sputtering at 700°C and by the spin coating of sol-gel method at 400°C on LaAlO 3(1 0 0) and Si(1 0 0) single-crystal substrates. The crystal structure and chemical composition of the film grown by RF sputtering method were orthorhombic and La 0.89Ca 0.11MnO 3, respectively, while the film prepared by sol-gel spin coating was cubic with La 0.7Ca 0.3MnO 3. The temperature dependence of the resistance for the film grown by RF sputtering method with the thickness of 1000°C shows that a semiconductor-metal transition occurs at 242 K. The relative maximum magnetoresistance is about 273% at 226 K.

Pulsed-DC selfsputtering of copper

NASA Astrophysics Data System (ADS)

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

2008-03-01

At standard magnetron sputtering conditions (argon pressure ~0.5 Pa) inert gas particles are often entrapped in the formed films. Inert gas contamination can be eliminated by using the self-sustained magnetron sputtering process because it is done in the absence of the inert gas atmosphere. The self-sustained sputtering (SSS) gives also a unique condition during the transport of sputtered particles to the substrate. It is especially useful for filling high aspect ratio submicron scale structures for microelectronics. So far it has been shown that the self-sputtering process can be sustained in the DC operation mode (DC-SSS) only. The main disadvantage of DC-SSS process is instability related to possible arc formation. Usage of pulsed sputtering, similarly to reactive pulsed magnetron sputtering, could eliminate this problem. In this paper results of pulsed-DC self-sustained magnetron sputtering (pulsed DC-SSS) of copper are presented for the first time. The planar magnetron equipped with a 50 mm in diameter and 6 mm thick copper target was powered by DC-power supply modulated by power switch. The maximum target power was about 11 kW (~550W/cm2). The magnetron operation was investigated as a function of pulsing frequency (20-100 kHz) and duty factor (50-90%). The discharge extinction pressure was determined for these conditions. The plasma emission spectra (400-410nm range) and deposition rates were observed for both DC and pulsed DC sustained self-sputtering processes. The presented results illustrate that stable pulsed DC-SSS process can be obtained at pulsing frequency in the range of 60-100 kHz and duty factor of 70-90%.

High Temperature Thermal Stability and Oxidation Resistance of Magnetron-sputtered Homogeneous CrAlON Coatings on 430 Steel

NASA Astrophysics Data System (ADS)

Kayani, A.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; Garratt, E.; AlFaify, S.; Gao, X.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.; Gorokhovsky, V. I.

2009-03-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800° C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Electrochemical and microstructural characterization of magnetron-sputtered ATO thin films as Li–ion storage materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouyang, Pan; Zhang, Hong; Chen, Wenhao

2015-01-15

Highlights: • Nano-structured ATO thin films prepared by RF magnetron sputtering at 25 °C, 100 °C and 200 °C, respectively. • ATO thin films show a high reversible capacity and high rate performance. • Electrochemical reaction mechanism of the ATO thin film was revealed by transmission electron microscopy. - Abstract: Sb-doped SnO{sub 2} (ATO) nanostructured thin films were prepared by using radio frequency magnetron sputtering at the substrate temperatures of 25 °C, 100 °C and 200 °C, respectively. All the ATO thin films have the similar redox characteristics in the cyclic voltammetry measurements. The ATO thin film sputtered at 200more » °C shows the lowest charge transfer resistance and best electrochemical performance, and has a high reversible capacity of 679 mA h g{sup −1} at 100 mA g{sup −1} after 200 charge–discharge cycles and high rate performance of 483 mA h g{sup −1} at 800 mA g{sup −1}. The electrochemical mechanisms were investigated by analyzing the phase evolution of the ATO electrodes that had been electrochemically induced at various stages. The results reveal that the ATO underwent reversible lithiation/delithiation processes during the electrochemical cycles, i.e., the SnO{sub 2} reacted with Li{sup +} to produce metallic Sn and followed by the formation of the Li{sub x}Sn alloys during discharge process, and then Li{sub x}Sn alloys de-alloyed, Sn reacted with Li{sub 2}O, and even partially formed SnO{sub 2} during charge process.« less

Substrate bias effect on the fabrication of thermochromic VO2 films by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Miyazaki, H.; Yasui, I.

2006-05-01

Vanadium oxide VOx films were deposited by reactive RF magnetron sputtering by applying a substrate bias, in which the Ar ions in plasma impacted the growing film surface. The vanadium valence of the VOx film decreased when the substrate negative bias voltage was increased. The VO2 film was successfully deposited at a substrate temperature of 400 °C and with a bias voltage of -50 to -80 V. The transition temperatures of the VO2 films with a substrate bias of -50 and -80 V were about 56 °C and 44 °C, respectively.

Development of optimization model for sputtering process parameter based on gravitational search algorithm

NASA Astrophysics Data System (ADS)

Norlina, M. S.; Diyana, M. S. Nor; Mazidah, P.; Rusop, M.

2016-07-01

In the RF magnetron sputtering process, the desirable layer properties are largely influenced by the process parameters and conditions. If the quality of the thin film has not reached up to its intended level, the experiments have to be repeated until the desirable quality has been met. This research is proposing Gravitational Search Algorithm (GSA) as the optimization model to reduce the time and cost to be spent in the thin film fabrication. The optimization model's engine has been developed using Java. The model is developed based on GSA concept, which is inspired by the Newtonian laws of gravity and motion. In this research, the model is expected to optimize four deposition parameters which are RF power, deposition time, oxygen flow rate and substrate temperature. The results have turned out to be promising and it could be concluded that the performance of the model is satisfying in this parameter optimization problem. Future work could compare GSA with other nature based algorithms and test them with various set of data.

Electric tunable behavior of sputtered lead barium zirconate thin films

NASA Astrophysics Data System (ADS)

Wu, Lin-Jung; Wu, Jenn-Ming; Huang, Hsin-Erh; Bor, Hui-Yun

2007-02-01

Lead barium zirconate (PBZ) films were grown on Pt /Ti/SiO2/Si substrates by rf-magnetron sputtering. The sputtered PBZ films possess pure perovskite phase, uniform microstructure, and excellent tunable behaviors. The tunability and loss tangent of sputtered PBZ films depend greatly on the oxygen mixing ratio (OMR). The optimal dielectric tunable behavior occurs in the PBZ films sputtered at 10% OMR. The sputtered PBZ film (10% OMR) possesses a value of figure of merit of 60, promising for frequency-agile applications. Bulk acoustic waves induced by electromechanical coupling occur at 2.72GHz, which is useful in fabricating filters and related devices in the microwave range.

Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

NASA Astrophysics Data System (ADS)

Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

2018-04-01

Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

Effects of various deposition times and RF powers on CdTe thin film growth using magnetron sputtering

NASA Astrophysics Data System (ADS)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2016-09-01

Cadmium telluride (CdTe) is a p-type II-VI compound semiconductor, which is an active component for producing photovoltaic solar cells in the form of thin films, due to its desirable physical properties. In this study, CdTe film was deposited using the radio frequency (RF) magnetron sputtering system onto a glass substrate. To improve the properties of the CdTe film, effects of two experimental parameters of deposition time and RF power were investigated on the physical properties of the CdTe films. X-ray Diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer were used to study the structural, morphological and optical properties of the CdTe samples grown at different experimental conditions, respectively. Our results suggest that film properties strongly depend on the experimental parameters and by optimizing these parameters, it is possible to tune the desired structural, morphological and optical properties. From XRD data, it is found that increasing the deposition time and RF power leads to increasing the crystallinity as well as the crystal sizes of the grown film, and all the films represent zinc blende cubic structure. Roughness values given from AFM images suggest increasing the roughness of the CdTe films by increasing the RF power and deposition times. Finally, optical investigations reveal increasing the film band gaps by increasing the RF power and the deposition time.

Substrate dependent hierarchical structures of RF sputtered ZnS films

NASA Astrophysics Data System (ADS)

Chalana, S. R.; Mahadevan Pillai, V. P.

2018-05-01

RF magnetron sputtering technique was employed to fabricate ZnS nanostructures with special emphasis given to study the effect of substrates (quartz, glass and quartz substrate pre-coated with Au, Ag, Cu and Pt) on the structure, surface evolution and optical properties. Type of substrate has a significant influence on the crystalline phase, film morphology, thickness and surface roughness. The present study elucidates the suitability of quartz substrate for the deposition of stable and highly crystalline ZnS films. We found that the role of metal layer on quartz substrate is substantial in the preparation of hierarchical ZnS structures and these structures are of great importance due to its high specific area and potential applications in various fields. A mechanism for morphological evolution of ZnS structures is also presented based on the roughness of substrates and primary nonlocal effects in sputtering. Furthermore, the findings suggest that a controlled growth of hierarchical ZnS structures may be achieved with an ordinary RF sputtering technique by changing the substrate type.

Structural and optical properties of gold-incorporated diamond-like carbon thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Majeed, Shahbaz; Siraj, K.; Naseem, S.; Khan, Muhammad F.; Irshad, M.; Faiz, H.; Mahmood, A.

2017-07-01

Pure and gold-doped diamond-like carbon (Au-DLC) thin films are deposited at room temperature by using RF magnetron sputtering in an argon gas-filled chamber with a constant flow rate of 100 sccm and sputtering time of 30 min for all DLC thin films. Single-crystal silicon (1 0 0) substrates are used for the deposition of pristine and Au-DLC thin films. Graphite (99.99%) and gold (99.99%) are used as co-sputtering targets in the sputtering chamber. The optical properties and structure of Au-DLC thin films are studied with the variation of gold concentration from 1%-5%. Raman spectroscopy, atomic force microscopy (AFM), Vickers hardness measurement (VHM), and spectroscopic ellipsometry are used to analyze these thin films. Raman spectroscopy indicates increased graphitic behavior and reduction in the internal stresses of Au-DLC thin films as the function of increasing gold doping. AFM is used for surface topography, which shows that spherical-like particles are formed on the surface, which agglomerate and form larger clusters on the surface by increasing the gold content. Spectroscopy ellipsometry analysis elucidates that the refractive index and extinction coefficient are inversely related and the optical bandgap energy is decreased with increasing gold content. VHM shows that gold doping reduces the hardness of thin films, which is attributed to the increase in sp2-hybridization.

Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

2018-04-01

In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, André

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.« less

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

DOE PAGES

Anders, André

2017-03-21

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. Furthermore, by applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films.more » Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become “poisoned,” i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.« less

Tutorial: Reactive high power impulse magnetron sputtering (R-HiPIMS)

NASA Astrophysics Data System (ADS)

Anders, André

2017-05-01

High Power Impulse Magnetron Sputtering (HiPIMS) is a coating technology that combines magnetron sputtering with pulsed power concepts. By applying power in pulses of high amplitude and a relatively low duty cycle, large fractions of sputtered atoms and near-target gases are ionized. In contrast to conventional magnetron sputtering, HiPIMS is characterized by self-sputtering or repeated gas recycling for high and low sputter yield materials, respectively, and both for most intermediate materials. The dense plasma in front of the target has the dual function of sustaining the discharge and providing plasma-assistance to film growth, affecting the microstructure of growing films. Many technologically interesting thin films are compound films, which are composed of one or more metals and a reactive gas, most often oxygen or nitrogen. When reactive gas is added, non-trivial consequences arise for the system because the target may become "poisoned," i.e., a compound layer forms on the target surface affecting the sputtering yield and the yield of secondary electron emission and thereby all other parameters. It is emphasized that the target state depends not only on the reactive gas' partial pressure (balanced via gas flow and pumping) but also on the ion flux to the target, which can be controlled by pulse parameters. This is a critical technological opportunity for reactive HiPIMS (R-HiPIMS). The scope of this tutorial is focused on plasma processes and mechanisms of operation and only briefly touches upon film properties. It introduces R-HiPIMS in a systematic, step-by-step approach by covering sputtering, magnetron sputtering, reactive magnetron sputtering, pulsed reactive magnetron sputtering, HiPIMS, and finally R-HiPIMS. The tutorial is concluded by considering variations of R-HiPIMS known as modulated pulsed power magnetron sputtering and deep-oscillation magnetron sputtering and combinations of R-HiPIMS with superimposed dc magnetron sputtering.

RF Magnetron Sputtering Deposited W/Ti Thin Film For Smart Window Applications

NASA Astrophysics Data System (ADS)

Oksuz, Lutfi; Kiristi, Melek; Bozduman, Ferhat; Uygun Oksuz, Aysegul

2014-10-01

Electrochromic (EC) devices can change reversible and persistent their optical properties in the visible region (400-800 nm) upon charge insertion/extraction according to the applied voltage. A complementary type EC is a device containing two electrochromic layers, one of which is anodically colored such as vanadium oxide (V2 O5) while the other cathodically colored such as tungsten oxide (WO3) which is separated by an ionic conduction layer (electrolyte). The use of a solid electrolyte such as Nafion eliminates the need for containment of the liquid electrolyte, which simplifies the cell design, as well as improves safety and durability. In this work, the EC device was fabricated on a ITO/glass slide. The WO3-TiO2 thin film was deposited by reactive RF magnetron sputtering using a 2-in W/Ti (9:1%wt) target with purity of 99.9% in a mixture gas of argon and oxygen. As a counter electrode layer, V2O5 film was deposited on an ITO/glass substrate using V2O3 target with the same conditions of reactive RF magnetron sputtering. Modified Nafion was used as an electrolyte to complete EC device. The transmittance spectra of the complementary EC device was measured by optical spectrophotometry when a voltage of +/-3 V was applied to the EC device by computer controlled system. The surface morphology of the films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM) (Fig. 2). The cyclic voltammetry (CV) for EC device was performed by sweeping the potential between +/-3 V at a scan rate of 50 mV/s.

Initial deposition of calcium phosphate ceramic on polystyrene and polytetrafluoroethylene by rf magnetron sputtering deposition

NASA Astrophysics Data System (ADS)

Feddes, B.; Wolke, J. G. C.; Jansen, J. A.; Vredenberg, A. M.

2003-03-01

Calcium phosphate (CaP) coatings can be applied to improve the biological performance of polymeric medical implants. A strong interfacial bond between ceramic and polymer is required for clinical applications. Because the chemical structure of an interface plays an important role in the adhesion of a coating, we studied the formation of the interface between CaP and polystyrene (PS) and polytetrafluoroethylene (PTFE). The coating was deposited in a radio frequency (rf) magnetron sputtering deposition system. Prior to the deposition, some samples received an oxygen plasma pretreatment. We found that the two substrates show a strongly different reactivity towards CaP. On PS a phosphorus and oxygen enrichment is present at the interface. This is understood from POx complexes that are able to bind to the PS. The effects of the plasma pretreatment are overruled by the deposition process itself. On PTFE, a calcium enrichment and an absence of phosphorus is found at the interface. The former is the result of CaF2-like material being formed at the interface. The latter may be the result of phosphorus reacting with escaping fluorine to a PF3 molecule, which than escapes from the material as a gas molecule. We found that the final structure of the interface is mostly controlled by the bombardment of energetic particles escaping either from the plasma or from the sputtering target. The work described here can be used to understand and improve the adhesion of CaP coatings deposited on medical substrates.

Deposition of undoped and Al doped ZnO thin films using RF magnetron sputtering and study of their structural, optical and electrical properties

NASA Astrophysics Data System (ADS)

Parvathy Venu, M.; Shrisha B., V.; Balakrishna, K. M.; Naik, K. Gopalakrishna

2017-05-01

Undoped ZnO and Al doped ZnO thin films were deposited on glass and p-Si(100) substrates by RF magnetron sputtering technique at room temperature using homemade targets. ZnO target containing 5 at% of Al2O3 as doping source was used for the growth of Al doped ZnO thin films. XRD revealed that the films have hexagonal wurtzite structure with high crystallinity. Morphology and chemical composition of the films have been indicated by FESEM and EDAX studies. A blue shift of the band gap energy and higher optical transmittance has been observed in the case of Al doped ZnO (ZnO:Al) thin films with respect to the ZnO thin films. The as deposited films on p-Si were used to fabricate n-ZnO/p-Si(100) and n-ZnO:Al/p-Si(100) heterojunction diodes and their room temperature current-voltage characteristics were studied.

MEMS Gate Structures for Electric Propulsion Applications

DTIC Science & Technology

2006-07-12

distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es...minutes. A hot pressed boron nitride target (4N) in the hexagonal phase (h- BN) was sputtered in a RF magnetron sputtering gun. To promote the nucleation...and nanoFETs. This paper concludes with a discussion on using MEMS gates for dual -grid electron field emission applications. II. Gate Design I I

Electronic transport mechanism in intrinsic and doped nanocrystalline silicon films deposited by RF-magnetron sputtering at low temperature

NASA Astrophysics Data System (ADS)

Benlakehal, D.; Belfedal, A.; Bouizem, Y.; Sib, J. D.; Chahed, L.; Zellama, K.

2016-12-01

The dependence on the temperature range, T, of the electronic transport mechanism in intrinsic and doped hydrogenated nanocrystalline silicon films, deposited by radiofrequency-magnetron sputtering at low substrate temperature, has been studied. Electrical conductivity measurements σ(T) have been conducted on these films, as a function of temperature, in the 93-450 K range. The analysis of these results clearly shows a thermally activated conduction process in the 273-450 K range which allows us to estimate the associated activation energy as well as the preexponential conductivity factor. While, in the lower temperature range (T < 273 K), a non-ohmic behavior is observed for the conductivity changes. The conductivity σ(T) presents a linear dependence on (T-1/4) , and a hopping mechanism is suggested to explain these results. By using the Percolation theory, further information can be gained about the density of states near the Fermi level as well as the range and the hopping energy.

Structural, electrical, and optical properties of antimony-doped tin oxide films prepared at room temperature by radio frequency magnetron sputtering for transparent electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Uk; Hong, Byungyou; Choi, Won Seok

2009-07-15

Antimony-doped tin oxide (ATO) films were prepared on 7059 Corning glass substrate by the radio frequency (rf) magnetron sputtering method using SnO{sub 2} target mixed with Sb of 6 wt % at room temperature. The working pressure was varied from 0.67 to 2 Pa in steps of 0.67 Pa, and the rf power was varied from 100 to 175 W in steps of 25 W at room temperature. The thickness of the deposited ATO films was about 150 nm. X-ray diffraction (XRD) measurements showed the ATO films to be crystallized with a strong (101) preferred orientation as the rf powermore » is increased. The spectra revealed that the deposited films were polycrystalline, retaining the tetragonal structure. The grain size was estimated from the XRD spectra using the Scherrer equation and found to decrease with a decrease in the working pressure and an increase in the rf power, while the surface roughness was observed to be smoothened. The ATO film that was deposited at a working pressure of 0.67 Pa with rf power of 175 W showed the lowest resistivity of 8.6x10{sup -3} {Omega} cm, and the optical transmittance was 86.5% in the visible wavelength range from 400 to 800 nm.« less

Fabrication and physico-mechanical properties of thin magnetron sputter deposited silver-containing hydroxyapatite films

NASA Astrophysics Data System (ADS)

Ivanova, A. A.; Surmeneva, M. A.; Tyurin, A. I.; Pirozhkova, T. S.; Shuvarin, I. A.; Prymak, O.; Epple, M.; Chaikina, M. V.; Surmenev, R. A.

2016-01-01

As a measure of the prevention of implant associated infections, a number of strategies have been recently applied. Silver-containing materials possessing antibacterial activity as expected might have wide applications in orthopedics and dentistry. The present work focuses on the physico-chemical characterization of silver-containing hydroxyapatite (Ag-HA) coating obtained by radio frequency (RF) magnetron sputtering. Mechanochemically synthesized Ag-HA powder (Ca10⿿xAgx(PO4)6(OH)2⿿x, x = 1.5) was used as a precursor for sputtering target preparation. Morphology, composition, crystallinity, physico-mechanical features (Young's modulus and nanohardness) of the deposited Ag-HA coatings were investigated. The sputtering of the nanostructured multicomponent target at the applied process conditions allowed to deposit crystalline Ag-HA coating which was confirmed by XRD and FTIR data. The SEM results revealed the formation of the coating with the grain morphology and columnar cross-section structure. The EDX analysis confirmed that Ag-HA coating contained Ca, P, O and Ag with the Ca/P ratio of 1.6 ± 0.1. The evolution of the mechanical properties allowed to conclude that addition of silver to HA film caused increase of the coating nanohardness and elastic modulus compared with those of pure HA thin films deposited under the same deposition conditions.

High-efficiency, thin-film cadmium telluride photovoltaic cells

NASA Astrophysics Data System (ADS)

Compaan, A. D.; Bohn, R. G.; Rajakarunanayake, Y.

1995-08-01

This report describes work performed to develop and optimize the process of radio frequency (RF) sputtering for the fabrication of thin-film solar cells on glass. The emphasis is on CdTe-related materials including CdTe, CdS, ZnTe, and ternary alloy semiconductors. Pulsed laser physical vapor deposition (LPVD) was used for exploratory work on these materials, especially where alloying or doping are involved, and for the deposition of cadmium chloride layers. For the sputtering work, a two-gun sputtering chamber was implemented, with optical access for monitoring temperature and growth rate. We studied the optical and electrical properties of the plasmas produced by two different kinds of planar magnetron sputter guns with different magnetic field configurations and strengths. Using LPVD, we studied alloy semiconductors such as CdZnTe and heavily doped semiconductors such as ZnTe:Cu for possible incorporation into graded band gap CdTe-based photovoltaic devices.

Reactive magnetron sputtering of N-doped carbon thin films on quartz glass for transmission photocathode applications

NASA Astrophysics Data System (ADS)

Balalykin, N. I.; Huran, J.; Nozdrin, M. A.; Feshchenko, A. A.; Kobzev, A. P.; Sasinková, V.; Boháček, P.; Arbet, J.

2018-03-01

N-doped carbon thin films were deposited on a silicon substrate and quartz glass by RF reactive magnetron sputtering using a carbon target and an Ar+N2 gas mixture. During the magnetron sputtering, the substrate holder temperatures was kept at 800 °C. The carbon film thickness on the silicon substrate was about 70 nm, while on the quartz glass it was in the range 15 nm – 60 nm. The elemental concentration in the films was determined by RBS and ERD. Raman spectroscopy was used to evaluate the intensity ratios I D/I G of the D and G peaks of the carbon films. The transmission photocathodes prepared were placed in the hollow-cathode assembly of a Pierce-structure DC gun to produce photoelectrons. The quantum efficiency (QE) was calculated from the laser energy and cathode charge measured. The properties of the transmission photocathodes based on semitransparent N-doped carbon thin films on quartz glass and their potential for application in DC gun technology are discussed.

High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering.

PubMed

Moon, Yeon-Keon; Moon, Dae-Yong; Lee, Sang-Ho; Jeong, Chang-Oh; Park, Jong-Wan

2008-09-01

Research in large area electronics, especially for low-temperature plastic substrates, focuses commonly on limitations of the semiconductor in thin film transistors (TFTs), in particular its low mobility. ZnO is an emerging example of a semiconductor material for TFTs that can have high mobility, while a-Si and organic semiconductors have low mobility (<1 cm2/Vs). ZnO-based TFTs have achieved high mobility, along with low-voltage operation low off-state current, and low gate leakage current. In general, ZnO thin films for the channel layer of TFTs are deposited with RF magnetron sputtering methods. On the other hand, we studied ZnO thin films deposited with DC magnetron sputtering for the channel layer of TFTs. After analyzing the basic physical and chemical properties of ZnO thin films, we fabricated a TFT-unit cell using ZnO thin films for the channel layer. The field effect mobility (micro(sat)) of 1.8 cm2/Vs and threshold voltage (Vth) of -0.7 V were obtained.

Solid oxide fuel cells with apatite-type lanthanum silicate-based electrolyte films deposited by radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Liu, Yi-Xin; Wang, Sea-Fue; Hsu, Yung-Fu; Wang, Chi-Hua

2018-03-01

In this study, solid oxide fuel cells (SOFCs) containing high-quality apatite-type magnesium doped lanthanum silicate-based electrolyte films (LSMO) deposited by RF magnetron sputtering are successfully fabricated. The LSMO film deposited at an Ar:O2 ratio of 6:4 on an anode supported NiO/Sm0.2Ce0·8O2-δ (SDC) substrate followed by post-annealing at 1000 °C reveals a uniform and dense c-axis oriented polycrystalline structure, which is well adhered to the anode substrate. A composite SDC/La0·6Sr0·4Co0·2Fe0·8O3-δ cathode layer is subsequently screen-printed on the LSMO deposited anode substrate and fired. The SOFC fabricated with the LSMO film exhibits good mechanical integrity. The single cell with the LSMO layer of ≈2.8 μm thickness reports a total cell resistance of 1.156 and 0.163 Ωcm2, open circuit voltage of 1.051 and 0.982 V, and maximum power densities of 0.212 and 1.490 Wcm-2 at measurement temperatures of 700 and 850 °C, respectively, which are comparable or superior to those of previously reported SOFCs with yttria stabilized zirconia electrolyte films. The results of the present study demonstrate the feasibility of deposition of high-quality LSMO films by RF magnetron sputtering on NiO-SDC anode substrates for the fabrication of SOFCs with good cell performance.

High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

NASA Astrophysics Data System (ADS)

Garratt, E.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; AlFaify, S.; Gao, X.; Kayani, A.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.

2009-11-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 oC. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Enhanced tunability of magnetron sputtered Ba0.5Sr0.5TiO3 thin films on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Reichart, P.

2006-07-01

Thin films of Ba0.5Sr0.5TiO3 (BST) were deposited on c-plane (0001) sapphire by rf magnetron sputtering and investigated by complementary materials analysis methods. Microwave properties of the films, including tunability and Q factor were measured from 1to20GHz by patterning interdigital capacitors (IDCs) on the film surface. The tunability is correlated with texture, strain, and grain size in the deposited films. An enhanced capacitance tunability of 56% at a bias field of 200kV/cm and total device Q of more than 15 (up to 20GHz) were achieved following postdeposition annealing at 900°C.

Copper deposition on fabrics by rf plasma sputtering for medical applications

NASA Astrophysics Data System (ADS)

Segura, G.; Guzmán, P.; Zuñiga, P.; Chaves, S.; Barrantes, Y.; Navarro, G.; Asenjo, J.; Guadamuz Vargas, S., VI; Chaves, J.

2015-03-01

The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10-2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms.

Spectroscopic ellipsometry investigation of the optical properties of graphene oxide dip-coated on magnetron sputtered gold thin films

NASA Astrophysics Data System (ADS)

Politano, Grazia Giuseppina; Vena, Carlo; Desiderio, Giovanni; Versace, Carlo

2018-02-01

Despite intensive investigations on graphene oxide-gold nanocomposites, the interaction of graphene oxide sheets with magnetron sputtered gold thin films has not been studied yet. The optical constants of graphene oxide thin films dip-coated on magnetron sputtered gold thin films were determined by spectroscopic ellipsometry in the [300-1000] wavelength range. Moreover, the morphologic properties of the samples were investigated by SEM analysis. Graphene oxide absorbs mainly in the ultraviolet region, but when it is dip-coated on magnetron sputtered gold thin films, its optical constants show dramatic changes, becoming absorbing in the visible region, with a peak of the extinction coefficient at 3.1 eV. Using magnetron sputtered gold thin films as a substrate for graphene oxide thin films could therefore be the key to enhance graphene oxide optical sheets' properties for several technological applications, preserving their oxygen content and avoiding the reduction process.

Nb and Ta Co-Doped TiO2 Transparent Conductive Thin Films by Magnetron Sputtering: Fabrication, Structure, and Characteristics

NASA Astrophysics Data System (ADS)

Liu, Yang; Peng, Qian; Qiao, Yadong; Yang, Guang

2018-06-01

Nb and Ta co-doped anatase titanium dioxide (NTTO) nanocrystalline thin films were deposited on quartz and Si (100) substrates by RF magnetron sputtering. The influence of RF power on the growth, structure, morphology, and properties of the samples are discussed in detail. X-ray diffraction measurements show that the films are polycrystalline with anatase tetragonal structure, which is further confirmed by Raman spectroscopy analysis. Meanwhile, Raman spectroscopy results indicate that the peak width of E g(1) mode, which is directly correlated to the carrier density, changes obviously with RF power. It is found that the substitution of Nb5+ and Ta5+ at Ti site is significantly improved with the increase of RF power from 150 W to 210 W. For the sample deposited at 210 W, the optical transmittance is above 82% in the visible range and the electrical resistivity is as low as 1.3 × 10-3 Ω cm with carrier density of 1.1 × 1021 cm-3 and Hall mobility of 4.5 cm2 V-1 s-1. The optical and electrical properties of NTTO thin films can be compared to those of Nb or Ta doped anatase TiO2. However, co-doping with Nb and Ta gives a possible platform to complement the limitations of each individual dopant.

Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bodeux, Romain; Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac; Michau, Dominique, E-mail: dominique.michau@icmcb.cnrs.fr

2016-09-15

Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similarmore » to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.« less

Effects of deposition temperatures on structure and physical properties of Cd 1-xZn xTe films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Zeng, Dongmei; Jie, Wanqi; Zhou, Hai; Yang, Yingge

2010-02-01

Cd 1-xZn xTe films were deposited by RF magnetron sputtering from Cd 0.9Zn 0.1Te crystals target at different substrate temperatures (100-400 °C). The effects of the deposition temperature on structure and physical properties of Cd 1-xZn xTe films have been studied using X-ray diffraction (XRD), step profilometer, atomic force microscopy (AFM), ultraviolet spectrophotometer and Hall effect measurements. X-ray studies suggest that the deposited films were polycrystalline with preferential (1 1 1) orientation. AFM micrographs show that the grain size was changed from 50 to 250 nm with the increase of deposition temperatures, the increased grain size may result from kinetic factors during sputtering growth. The optical transmission data indicate that shallow absorption edge occurs in the range of 744-835 nm and that the optical absorption coefficient is varied with the increase of deposition temperatures. In Hall Effect measurements, the sheet resistivities of the deposited films are 3.2×10 8, 3.0×10 8, 1.9×10 8 and 1.1×10 8 Ohm/sq, which were decreased with the increase of substrate temperatures. Analysis of the resistivity of films depended on the substrate temperatures is discussed.

Characterization of thin MoO3 films formed by RF and DC-magnetron reactive sputtering for gas sensor applications

NASA Astrophysics Data System (ADS)

Yordanov, R.; Boyadjiev, S.; Georgieva, V.; Vergov, L.

2014-05-01

The present work discusses a technology for deposition and characterization of thin molybdenum oxide (MoOx, MoO3) films studied for gas sensor applications. The samples were produced by reactive radio-frequency (RF) and direct current (DC) magnetron sputtering. The composition and microstructure of the films were studied by XPS, XRD and Raman spectroscopy, the morphology, using high resolution SEM. The research was focused on the sensing properties of the sputtered thin MoO3 films. Highly sensitive gas sensors were implemented by depositing films of various thicknesses on quartz resonators. Making use of the quartz crystal microbalance (QCM) method, these sensors were capable of detecting changes in the molecular range. Prototype QCM structures with thin MoO3 films were tested for sensitivity to NH3 and NO2. Even in as-deposited state and without heating the substrates, these films showed good sensitivity. Moreover, no additional thermal treatment is necessary, which makes the production of such QCM gas sensors simple and cost-effective, as it is fully compatible with the technology for producing the initial resonator. The films are sensitive at room temperature and can register concentrations as low as 50 ppm. The sorption is fully reversible, the films are stable and capable of long-term measurements.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Characterizations of the Core-Shell Structured MgB2/CARBON Fiber Synthesis by Rf-Sputtering and Thermal Evaporation

NASA Astrophysics Data System (ADS)

Park, Sung Chang; Lim, Yeong Jin; Lee, Tae-Keun; Kim, Cheol Jin

MgB2/carbon fibers have been synthesized by the combination of RF-sputtering of B and thermal evaporation of Mg, followed by co-evaporation. First, boron layer was deposited by RF-sputtering on the carbon fiber with average diameter of 7.1 μm. Later this coated layer of B was reacted with Mg vapor to transform into MgB2. Since the MgB2 reaction proceed with Mg diffusion into the boron layer, Mg vapor pressure and the diffusion time had to be controlled precisely to secure the complete reaction. Also the deposition rate of each element was controlled separately to obtain stoichiometric MgB2, since Mg was evaporated by thermal heating and B by sputtering system. The sintered B target was magnetron sputtered at the RF-power of ~200 W, which corresponded to the deposition rate of ~3.6 Å/s. With the deposition rate of B fixed, the vapor pressure of Mg was controlled by varying the temperature of tungsten boat with heating element control unit between 100 and 900°C. The MgB2 layers with the thickness of 200-950 nm could be obtained and occasionally MgO appeared as a second phase. Superconducting transition temperatures were measured around ~38 K depending on the deposition condition.

Improvement of corrosion protection property of Mg-alloy by DLC and Si-DLC coatings with PBII technique and multi-target DC-RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Masami, Ikeyama; Setsuo, Nakao; Tsutomu, Sonoda; Junho, Choi

2009-05-01

Magnesium alloys have been considered as one of the most promising light weight materials with potential applications for automobile and aircraft components. Their poor corrosion resistance, however, has to date prevented wider usage. Diamond-like carbon (DLC) and silicon-incorporated DLC (Si-DLC) coatings are known to provide a high degree of corrosion protection, and hold accordingly promise for enhancing the corrosion resistance of the magnesium alloys. In this work we have studied the effect of coating conditions of DLC coatings as well as Si incorporation into coating on corrosion resistance, deposited onto AZ91 magnesium alloy substrates by plasma based ion implantation (PBII). The influences of a Ti interlayer beneath the DLC, Si-DLC and Ti incorporated DLC (Ti-DLC) coatings fabricated by multi-target direct-current radio-frequency (DC-RF) magnetron sputtering were also examined on both the adhesion strength and corrosion resistance of the materials. We have also examined the effect of the Si content in the Si-DLC coatings made by magnetron sputtering on the alloys' corrosion resistance. The results of potentiodynamic polarization measurements demonstrate that Si-DLC coating deposited by PBII exhibits the highest corrosion resistance in an aqueous 0.05 M NaCl solution. Although Ti layer is helpful in increasing adhesion between DLC coating and AZ91 substrate, it also influences adversely corrosion protection. The ozone treatment of the magnesium alloy's surface before the formation of coatings has been found to improve both adhesion strength and corrosion resistance.

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Feng, E-mail: fangfeng@seu.edu.cn; Zhang, Yeyu; Wu, Xiaoqin

2015-08-15

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical propertiesmore » of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.« less

Electrochemical properties of magnetron sputtered WO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madhavi, V.; Kondaiah, P.; Hussain, O. M.

2013-02-05

Thin films of tungsten oxide (WO{sub 3}) were deposited on ITO substrates by using RF magnetron sputtering at oxygen and argon atmospheres of 6 Multiplication-Sign 10{sup -2}Pa and 4 Pa respectively. The chemical composition and surface morphology of the WO{sub 3} thin films have been studied by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results indicate that the deposited WO{sub 3} thin films are nearly stoichiometric. The electrochemical performances of the WO{sub 3} thin films have been evaluated by galvonostatic charging/discharging method. The discharge capacity was 15{mu}Ah/cm{sup 2}{mu}m at the initial cycle and faded rapidly inmore » the first few cycles and stabilized at a lesser stage.« less

Structural and optical properties of magnetron sputtered MgxZn1-xO thin films

NASA Astrophysics Data System (ADS)

Kumar, Sanjeev; Gupte, Vinay; Sreenivas, K.

2006-04-01

MgxZn1-xO (MZO) thin films prepared by an rf magnetron sputtering technique are reported. The films were grown at room temperature and at relatively low rf power of 50 W. MZO thin films were found to possess preferred c-axis orientation and exhibited hexagonal wurtzite structure of ZnO up to a Mg concentration of 42 mol%. A small variation in the c-axis lattice parameter of around 0.3% was observed with increasing Mg composition, showing the complete solubility of Mg in ZnO. The band gap of the MZO films in the wurtzite phase varied linearly with the Mg concentration and a maximum band gap ~4.19 eV was achieved at x = 0.42. The refractive indices of the MgO films were found to decrease with increasing Mg content. The observed optical dispersion data are in agreement with the single oscillator model. A photoluminescence study revealed a blue shift in the near band edge emission peak with increasing Mg content in the MZO films. The results show the potential of MZO films in various opto-electronic applications.

Electrical and structural properties of TiO2-δ thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Suzuki, Naoya; Tsuchiya, Takashi; Shimazu, Yuichi; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

Anatase TiO2-δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2-δ crystal orientation in the thin film depends of the oxygen gas pressure (P\\text{O2}) in the radical gun. The (004)- and (112)-oriented TiO2-δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The electrical conductivities, which corresponds to n-type oxide semiconductor, is higher in the case of (004)-oriented TiO2-δ thin film containing with high concentration of oxygen vacancy. The donor band of TiO2-δ thin film is observed at ˜1.0 eV from the Fermi level (E F). The density-of-state at E F is higher in (004)-oriented TiO2-δ thin film. The above results indicate that the oxygen vacancies can control by changing the P\\text{O2} of the oxygen radical.

Metal-insulator transition of valence-controlled VO2 thin film prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Suetsugu, Takaaki; Shimazu, Yuichi; Tsuchiya, Takashi; Kobayashi, Masaki; Minohara, Makoto; Sakai, Enju; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

We have prepared b-axis-oriented VO2 thin films by RF magnetron sputtering using oxygen radicals as the reactive gas. The VO2 thin films consist of a mixed-valence V3+/V4+ state formed by oxygen vacancies. The V3+ ratio strongly depends on the film thickness and the oxygen partial pressure of the radical gun during deposition. The lattice constant of the b-axis increases and the metal-insulator transition (MIT) temperature decreases with decreasing V3+ ratio, although the VO2 thin films with a high V3+ ratio of 42% do not exhibit MIT. The bandwidths and spectral weights of V 3d a1g and \\text{e}\\text{g}σ bands at around the Fermi level, which correspond to the insulating phase at 300 K, are smaller in the VO2 thin films with a low V3+ ratio. These results indicate that the control of the mixed-valence V3+/V4+ state is important for the MIT of b-axis-oriented VO2 thin films.

Structural evolution and growth mechanisms of RF-magnetron sputter-deposited hydroxyapatite thin films on the basis of unified principles

NASA Astrophysics Data System (ADS)

Ivanova, Anna A.; Surmeneva, Maria A.; Surmenev, Roman A.; Depla, Diederik

2017-12-01

The structural features of RF-magnetron sputter-deposited hydroxyapatite (HA) coatings are investigated in order to reveal the effect of the working gas composition and the sample position of the substrate relative to the target erosion zone. The film properties were observed to change as a result of bombardment with energetic ions. XRD analysis of the coated substrates indicates that with the increase of the ion-to-atom ratio, the fiber texture changes from a mixed (11 2 bar 2) + (0002) over (0002) orientation, finally reaching a (30 3 bar 0) out-of-plane orientation at high ion-to-atom ratios. TEM reveals that the microstructure of the HA coating consists of columnar grains and differs with the coating texture. The contribution of Ji/Ja to the development of microstructure and texture of the HA coating is schematically represented and discussed. The obtained results may contribute substantially to the progress of research into the development of HA coatings with tailored properties, and these coatings may be applied on the surfaces of metal implants used in bone surgery.

Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

NASA Astrophysics Data System (ADS)

Jong, Chao-An; Gan, Jon-Yiew

2000-02-01

Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

Electrical and optical properties of molybdenum doped zinc oxide films prepared by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, R. Subba; Sreedhar, A.; Uthanna, S., E-mail: uthanna@rediffmail.com

Molybdenum doped zinc oxide (MZO) films were deposited on to glass substrates held at temperatures in the range from 303 to 673 K by reactive RF magnetron sputtering method. The chemical composition, crystallographic structure and surface morphology, electrical and optical properties of the films were determined. The films contained the molybdenum of 2.7 at. % in ZnO. The films deposited at 303 K were of X-ray amorphous. The films formed at 473 K were of nanocrystalline in nature with wurtzite structure. The crystallite size of the films was increased with the increase of substrate temperature. The optical transmittance of the films was inmore » the visible range was 80–85%. The molybdenum (2.7 at %) doped zinc oxide films deposited at substrate temperature of 573 K were of nanocrystalline with electrical resistivity of 7.2×10{sup −3} Ωcm, optical transmittance of 85 %, optical band gap of 3.35 eV and figure of merit 30.6 Ω{sup −1}cm{sup −1}.« less

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1993-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1995-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and TI/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1993-04-20

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films and Ti/B multilayer structures

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1995-02-14

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

Influence of sputtering power on the optical properties of ITO thin films

NASA Astrophysics Data System (ADS)

K, Aijo John; Kumar, Vineetha V.; M, Deepak; T, Manju

2014-10-01

Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

NASA Astrophysics Data System (ADS)

Menon, Rashmi; Gupta, Vinay; Tan, H. H.; Sreenivas, K.; Jagadish, C.

2011-03-01

Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1 × 1011 to -2 × 108 dyne/cm2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

PubMed Central

Liu, Can; Li, Zhengcao; Zhang, Zhengjun

2013-01-01

In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ⩽ x ⩽ 2.3) deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3) film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm−2 measured at 5 mV s−1), best rate capability and excellent stability at potentials below −0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ⩽ 3). A mechanism combining Mo(IV) oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process. PMID:27877625

MoO x thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors.

PubMed

Liu, Can; Li, Zhengcao; Zhang, Zhengjun

2013-12-01

In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoO x films (2 ⩽ x ⩽ 2.3) deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li 2 SO 4 . The MoO x ( x ≈ 2.3) film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm -2 measured at 5 mV s -1 ), best rate capability and excellent stability at potentials below -0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO 2 nanocrystals and amorphous MoO x (2.3 < x ⩽ 3). A mechanism combining Mo(IV) oxidation/reduction on the hydrated MoO 2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

MoOx thin films deposited by magnetron sputtering as an anode for aqueous micro-supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Can; Li, Zhengcao; Zhang, Zhengjun

2013-12-01

In order to examine the potential application of non-stoichiometric molybdenum oxide as anode materials for aqueous micro-supercapacitors, conductive MoOx films (2 ⩽ x ⩽ 2.3) deposited via RF magnetron sputtering at different temperatures were systematically studied for composition, structure and electrochemical properties in an aqueous solution of Li2SO4. The MoOx (x ≈ 2.3) film deposited at 150 °C exhibited a higher areal capacitance (31 mF cm-2 measured at 5 mV s-1), best rate capability and excellent stability at potentials below -0.1 V versus saturated calomel electrode, compared to the films deposited at room temperature and at higher temperatures. These superior properties were attributed to the multi-valence composition and mixed-phase microstructure, i.e., the coexistence of MoO2 nanocrystals and amorphous MoOx (2.3 < x ⩽ 3). A mechanism combining Mo(IV) oxidation/reduction on the hydrated MoO2 grain surfaces and cation intercalation/extrusion is proposed to illustrate the pseudo-capacitive process.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

2017-11-01

Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

Effect of rapid thermal annealing on the structural and electrical properties of RF sputtered CCTO thin film

NASA Astrophysics Data System (ADS)

Tripathy, N.; Das, K. C.; Ghosh, S. P.; Bose, G.; Kar, J. P.

2017-02-01

CaCu3Ti4O12 (CCTO) thin films have been deposited by RF magnetron sputtering on silicon substrates at room temperature. As-deposited thin films were subjected to rapid thermal annealing (RTA) at different temperatures ranging from 850°C to 1000°C. XRD and capacitance - voltage studies indicate that the structural and electrical properties of CCTO thin film strongly depend upon the annealing temperature. XRD pattern of CCTO thin film annealed at 950°C revealed the polycrystalline nature with evolutions of microstructures. Electrical properties of the dielectric films were investigated by fabricating Al/CCTO/Si metal oxide semiconductor structure. Electrical properties were found to be deteriorated with increasing in annealing temperature.

Sputtered superconducting films of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x made by low-temperature, in-situ growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kampwirth, R.T.; Gray, K.E.; Andersen, P.H.

1989-01-01

Composite target rf magnetron sputtering has previously been successfully employed to make superconducting films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} in-situ at substrate temperatures T{sub s} < 700{degree}C. We report the successful growth of superconducting films of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub x} on single crystal MgO substrates by a low-temperature process using dc magnetron sputtering from a Bi-enriched composite target. Using a substrate temperature T{sub s} {approx} 645{degree}C, metallic films with a superconducting onset of 90--100K and an extrapolated T{sub c0} = 56K have been obtained. X-ray diffraction shows the films to be c-axis oriented. Electron microscopy reveals that the filmsmore » are not significantly smoother than films which were post-annealed at 865{degree}C, and that some segregation into nonsuperconducting phases had occurred. The exact mechanism by which crystallization and superconductivity occurs at such low temperatures is not yet known, but it can be speculated that the surface atoms are less constrained and thus have a smaller energy barrier to overcome in forming a crystal structure. 9 refs., 4 figs., 1 tab.« less

Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

NASA Astrophysics Data System (ADS)

Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

2018-06-01

This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

Magnetron sputtered boron films

DOEpatents

Makowiecki, Daniel M.; Jankowski, Alan F.

1998-01-01

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Magnetron sputtered boron films

DOEpatents

Makowiecki, D.M.; Jankowski, A.F.

1998-06-16

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

Variable range hopping in ZnO films

NASA Astrophysics Data System (ADS)

Ali, Nasir; Ghosh, Subhasis

2018-04-01

We report the variable range hopping in ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. It has been found that Mott variable range hopping dominant over Efros variable range hopping in all ZnO films. It also has been found that hopping distance and energy increases with increasing oxygen partial pressure.

Fabrication and characterization of flaky core-shell particles by magnetron sputtering silver onto diatomite

NASA Astrophysics Data System (ADS)

Wang, Yuanyuan; Zhang, Deyuan; Cai, Jun

2016-02-01

Diatomite has delicate porous structures and various shapes, making them ideal templates for microscopic core-shell particles fabrication. In this study, a new process of magnetron sputtering assisted with photoresist positioning was proposed to fabricate lightweight silver coated porous diatomite with superior coating quality and performance. The diatomite has been treated with different sputtering time to investigate the silver film growing process on the surface. The morphologies, constituents, phase structures and surface roughness of the silver coated diatomite were analyzed with SEM, EDS, XRD and AFM respectively. The results showed that the optimized magnetron sputtering time was 8-16 min, under which the diatomite templates were successfully coated with uniform silver film, which exhibits face centered cubic (fcc) structure, and the initial porous structures were kept. Moreover, this silver coating has lower surface roughness (RMS 4.513 ± 0.2 nm) than that obtained by electroless plating (RMS 15.692 ± 0.5 nm). And the infrared emissivity of coatings made with magnetron sputtering and electroless plating silver coated diatomite can reach to the lowest value of 0.528 and 0.716 respectively.

An experimental approach of decoupling Seebeck coefficient and electrical resistivity

NASA Astrophysics Data System (ADS)

Muhammed Sabeer N., A.; Paulson, Anju; Pradyumnan, P. P.

2018-04-01

The Thermoelectrics (TE) has drawn increased attention among renewable energy technologies. The performance of a thermoelectric material is quantified by a dimensionless thermoelectric figure of merit, ZT=S2σT/κ, where S and σ vary inversely each other. Thus, improvement in ZT is not an easy task. So, researchers have been trying different parameter variations during thin film processing to improve TE properties. In this work, tin nitride (Sn3N4) thin films were deposited on glass substrates by reactive RF magnetron sputtering and investigated its thermoelectric response. To decouple the covariance nature of Seebeck coefficient and electrical resistivity for the enhancement of power factor (S2σ), the nitrogen gas pressure during sputtering was reduced. Reduction in nitrogen gas pressure reduced both sputtering pressure and amount of nitrogen available for reaction during sputtering. This experimental approach of combined effect introduced preferred orientation and stoichiometric variations simultaneously in the sputtered Sn3N4 thin films. The scattering mechanism associated with these variations enhanced TE properties by independently drive the Seebeck coefficient and electrical resistivity parameters.

Highly ionized physical vapor deposition plasma source working at very low pressure

NASA Astrophysics Data System (ADS)

Stranak, V.; Herrendorf, A.-P.; Drache, S.; Cada, M.; Hubicka, Z.; Tichy, M.; Hippler, R.

2012-04-01

Highly ionized discharge for physical vapor deposition at very low pressure is presented in the paper. The discharge is generated by electron cyclotron wave resonance (ECWR) which assists with ignition of high power impulse magnetron sputtering (HiPIMS) discharge. The magnetron gun (with Ti target) was built into the single-turn coil RF electrode of the ECWR facility. ECWR assistance provides pre-ionization effect which allows significant reduction of pressure during HiPIMS operation down to p = 0.05 Pa; this is nearly more than an order of magnitude lower than at typical pressure ranges of HiPIMS discharges. We can confirm that nearly all sputtered particles are ionized (only Ti+ and Ti++ peaks are observed in the mass scan spectra). This corresponds well with high plasma density ne ˜ 1018 m-3, measured during the HiPIMS pulse.

Structural and morphological properties of ITO thin films grown by magnetron sputtering

NASA Astrophysics Data System (ADS)

Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

2015-10-01

Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

PubMed

Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

2017-12-26

ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

In-situ x-ray studies of compositional control during synthesis of LaGaO 3 by radio frequency-magnetron sputtering

DOE PAGES

Highland, Matthew J.; Fong, Dillon D.; Ju, Guangxu; ...

2015-08-28

In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO 3 epitaxial thin films by 90° off-axis RF-magnetron sputtering. We compared films deposited from a single LaGaO 3 source with those prepared by alternating deposition from separate La 2O 3 and Ga 2O 3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. Our results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques canmore » be utilized to achieve stoichiometric control in ultrathin films.« less

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

NASA Astrophysics Data System (ADS)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Synthesis and characterization of sputtered titanium nitride as a nucleation layer for novel neural electrode coatings

NASA Astrophysics Data System (ADS)

Sait, R. A.; Cross, R. B. M.

2017-12-01

A growing demand for chronically implantable electrodes has led to a search for the most suitable neural electrode interface material. Nobel metals such as platinum (Pt) are inadequate for electrode/neuron interfaces at small scales due to their poor electrochemical properties, low charge injection and high charge density per unit area. Titanium nitride (TiN) has been implemented in neural electrodes application due to its outstanding properties. In this work, TiNx films were deposited by non-reactive radio frequency (RF) magnetron sputtering towards the development of a novel TiN nanowires (NWs) neural interface. Although, there is substantial work on this material, its growth using non-reactive RF magnetron sputtering has not been reported previously and optimised towards the growth of TiN NWs and their use in neural interface applications. The sputtering parameters of RF power and argon (Ar) flow rate were varied in order to investigate their effects on the structural, electrical and electrochemical properties of the TiN films. A dense film morphology was observed in the scanning electron microscopy (SEM) images of TiN thin films showing a columnar structure. The film preferential orientation was changed between (200) and (111) with Ar flow rate due to the variation of the kinetic energy (KE) of the sputtered atoms. The crystallites size obtained were in the range of 13-95 nm. Surface roughness was found to increase from 0.69 to 1.95 nm as Ar flow rate increased. TiNx films showed a good electrical resistivity of 228 μΩ cm. Stoichiometry was found to vary with sputtering conditions in which the nitrogen content was found to deplete from the film at low Ar flow rate. The electrochemical behaviour of TiN films were characterised and the highest capacitance value obtained was 0.416 mF/cm2. From the results, it can be suggested that TiN thin film can be easily optimised to act as a nucleation layer for the growth of nanowires.

Altering properties of cerium oxide thin films by Rh doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz; NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148; Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz

2015-07-15

Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffractionmore » techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.« less

Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets

NASA Astrophysics Data System (ADS)

Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi

2000-10-01

Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.

Magnetron sputtered boron films for increasing hardness of a metal surface

DOEpatents

Makowiecki, Daniel M [Livermore, CA; Jankowski, Alan F [Livermore, CA

2003-05-27

A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Sobri, M.; Shuhaimi, A.; Hakim, K. M.; Ganesh, V.; Mamat, M. H.; Mazwan, M.; Najwa, S.; Ameera, N.; Yusnizam, Y.; Rusop, M.

2014-06-01

Nickel (Ni)/indium tin oxide (ITO) nanostructures were deposited on glass and silicon (1 1 1) substrates by RF magnetron sputtering using nickel and ITO (In-Sn, 90-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air. The effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. We found the appearance of (6 2 2) peak in addition to (4 0 0) and (2 2 2) major peaks, which indicates an enhancement of the film crystallinity at high temperature annealing of 650 °C. The samples show higher transmittance of more than 90% at 470 nm after annealing which is suitable for blue light emitting diode (LED) application. The optical energy bandgap is shifted from 3.51 to 3.65 eV for the Ni/ITO film after annealing at 650 °C. In addition, increasing the annealing temperature improves the film electrical properties. The resistivity value decreases from 3.77 × 10-5 Ω cm to 1.09 × 10-6 Ω cm upon increasing annealing temperature.

Combined effect of pulse electron beam treatment and thin hydroxyapatite film on mechanical features of biodegradable AZ31 magnesium alloy

NASA Astrophysics Data System (ADS)

Surmeneva, M. A.; Tyurin, A. I.; Teresov, A. D.; Koval, N. N.; Pirozhkova, T. S.; Shuvarin, I. A.; Surmenev, R. A.

2015-11-01

The morphology, elemental, phase composition, nanohardness, and Young's modulus of the hydroxyapatite (HA) coating deposited via radio frequency (RF) magnetron sputtering onto the AZ31 surface were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and nanoindentationtechniques. The calcium phosphate (Ca/P) molar ratio of the HA coating deposited via RF-magnetron sputtering onto AZ31 substrates according to EDX was 1.57+0.03. The SEM experiments revealed significant differences in the morphology of the HA film deposited on untreated and treated with the pulsed electron beam (PEB) AZ31 substrate. Nanoindentation studies demonstrated significant differences in the mechanical responses of the HA film deposited on the initial and PEB-modified AZ31 substrates. The nanoindentation hardness and the Young's modulus of the HA film on the magnesium alloy modified using the PEB treatment were higher than that of the HA layer on the untreated substrate. Moreover, the HA film fabricated onto the PEB-treated surface was more resistant to plastic deformation than the same film on the untreated AZ31 surface.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Catalytic activity and stability of nanometic Rh overlayers prepared by pulsed arc-plasma deposition and r.f. magnetron-sputtering

NASA Astrophysics Data System (ADS)

Misumi, Satoshi; Matsumoto, Akinori; Yoshida, Hiroshi; Sato, Tetsuya; Machida, Masato

2018-01-01

50 μm-thick Fe-Cr-Al metal foils covered by 7 nm-thick Rh overlayers were prepared by pulsed arc-plasma (AP) and r.f. magnetron sputtering technique to compare their catalytic activities. As-prepared metal foil catalysts were wrapped into a honeycomb structure with a density of 900 cells per square inches and the stoichiometric NO-CO-C3H6-O2 reaction was performed at space velocity of 1.2 × 105 h-1. During temperature ramp at 10 °C min-1, honeycomb catalysts showed steep light-off of NO, CO, and C3H6 at above 200 °C and their conversions soon reached to almost 100%. Both catalysts exhibited high turnover frequencies close to or more than 50-fold greater compared with those for a reference Rh/ZrO2 powder-coated cordierite honeycomb prepared using a conventional slurry coating. When the temperature ramping was repeated, however, the catalytic activity was decreased to the different extent depending on the preparation procedure. Significant deactivation occurred only when prepared by sputtering, whereas the sample prepared by AP showed no signs of deactivation. The deactivation is associated with the formation of passivation layers consisting of Fe, Cr, and Al oxides, which covered the surface and decreased the surface concentration of Rh. The Rh overlayer formed by AP was found to be thermally stable because of the strong adhesion to the metal foil surface, compared to the sample prepared by sputtering.

Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

NASA Astrophysics Data System (ADS)

Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

2011-09-01

The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

Very low pressure high power impulse triggered magnetron sputtering

DOEpatents

Anders, Andre; Andersson, Joakim

2013-10-29

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

A low energy muon spin rotation and point contact tunneling study of niobium films prepared for superconducting cavities

NASA Astrophysics Data System (ADS)

Junginger, Tobias; Calatroni, S.; Sublet, A.; Terenziani, G.; Prokscha, T.; Salman, Z.; Suter, A.; Proslier, T.; Zasadzinski, J.

2017-12-01

Point contact tunneling and low energy muon spin rotation are used to probe, on the same samples, the surface superconducting properties of micrometer thick niobium films deposited onto copper substrates using different sputtering techniques: diode, dc magnetron and HIPIMS. The combined results are compared to radio-frequency tests performances of RF cavities made with the same processes. Degraded surface superconducting properties are found to correlate to lower quality factors and stronger Q-slope. In addition, both techniques find evidence for surface paramagnetism on all samples and particularly on Nb films prepared by HIPIMS.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

PubMed Central

Sreedharan, Remadevi Sreeja; Ganesan, Vedachalaiyer; Sudarsanakumar, Chellappan Pillai; Bhavsar, Kaushalkumar; Prabhu, Radhakrishna; Mahadevan Pillai, Vellara Pappukutty Pillai

2015-01-01

Background Zinc oxide (ZnO) is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods Europium oxide (Eu2O3) doped ZnO films are prepared on quartz substrate using radio frequency (RF) magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV)-visible spectroscopy and photoluminescence (PL) spectroscopy. Results XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications. PMID:25765728

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

NASA Astrophysics Data System (ADS)

de Castro, Marcelo S. B.; Ferreira, Carlos L.; de Avillez, Roberto R.

2013-09-01

Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon-oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure. X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from -0.02 to -2.51% K-1. Computational thermodynamics was used to simulate the phase diagram of the vanadium-oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.

Effect of nitrogen doping on structural, morphological, optical and electrical properties of radio frequency magnetron sputtered zinc oxide thin films

NASA Astrophysics Data System (ADS)

Perumal, R.; Hassan, Z.

2016-06-01

Zinc oxide receives remarkable attention due to its several attractive physical properties. Zinc oxide thin films doped with nitrogen were grown by employing RF magnetron sputtering method at room temperature. Doping was accomplished in gaseous medium by mixing high purity nitrogen gas along with argon sputtering gas. Structural studies confirmed the high crystalline nature with c-axis oriented growth of the nitrogen doped zinc oxide thin films. The tensile strain was developed due to the incorporation of the nitrogen into the ZnO crystal lattice. Surface roughness of the grown films was found to be decreased with increasing doping level was identified through atomic force microscope analysis. The presenting phonon modes of each film were confirmed through FTIR spectral analysis. The increasing doping level leads towards red-shifting of the cut-off wavelength due to decrement of the band gap was identified through UV-vis spectroscopy. All the doped films exhibited p-type conductivity was ascertained using Hall measurements and the obtained results were presented.

Advances and challenges in the field of plasma polymer nanoparticles

PubMed Central

Pleskunov, Pavel; Nikitin, Daniil; Titov, Valerii; Shelemin, Artem; Vaidulych, Mykhailo; Kuzminova, Anna; Solař, Pavel; Hanuš, Jan; Kousal, Jaroslav; Kylián, Ondřej; Slavínská, Danka; Biederman, Hynek

2017-01-01

This contribution reviews plasma polymer nanoparticles produced by gas aggregation cluster sources either via plasma polymerization of volatile monomers or via radio frequency (RF) magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a focus on the development of novel nanostructured surfaces. PMID:29046847

Advances and challenges in the field of plasma polymer nanoparticles.

PubMed

Choukourov, Andrei; Pleskunov, Pavel; Nikitin, Daniil; Titov, Valerii; Shelemin, Artem; Vaidulych, Mykhailo; Kuzminova, Anna; Solař, Pavel; Hanuš, Jan; Kousal, Jaroslav; Kylián, Ondřej; Slavínská, Danka; Biederman, Hynek

2017-01-01

This contribution reviews plasma polymer nanoparticles produced by gas aggregation cluster sources either via plasma polymerization of volatile monomers or via radio frequency (RF) magnetron sputtering of conventional polymers. The formation of hydrocarbon, fluorocarbon, silicon- and nitrogen-containing plasma polymer nanoparticles as well as core@shell nanoparticles based on plasma polymers is discussed with a focus on the development of novel nanostructured surfaces.

Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca

2015-07-15

A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over themore » whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.« less

Magnetron sputtering source

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

1994-01-01

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

Heavily-doped ZnO:Al thin films prepared by using magnetron Co-sputtering: Optical and electrical properties

NASA Astrophysics Data System (ADS)

Moon, Eun-A.; Jun, Young-Kil; Kim, Nam-Hoon; Lee, Woo-Sun

2016-07-01

Photovoltaic applications require transparent conducting-oxide (TCO) thin films with high optical transmittance in the visible spectral region (380 - 780 nm), low resistivity, and high thermal/chemical stability. The ZnO thin film is one of the most common alternatives to the conventional indium-tin-oxide (ITO) thin film TCO. Highly transparent and conductive ZnO thin films can be prepared by doping with group III elements. Heavily-doped ZnO:Al (AZO) thin films were prepared by using the RF magnetron co-sputtering method with ZnO and Al targets to obtain better characteristics at a low cost. The RF sputtering power to each target was varied to control the doping concentration in fixed-thickness AZO thin films. The crystal structures of the AZO thin films were analyzed by using X-ray diffraction. The morphological microstructure was observed by using scanning electron microscopy. The optical transmittance and the band gap energy of the AZO thin films were examined with an UV-visible spectrophotometer in the range of 300 - 1800 nm. The resistivity and the carrier concentration were examined by using a Hall-effect measurement system. An excellent optical transmittance > 80% with an appropriate band gap energy (3.26 - 3.27 eV) and an improved resistivity (~10 -1 Ω·cm) with high carrier concentration (1017 - 1019 cm -3) were demonstrated in 350-nm-thick AZO thin films for thin-film photovoltaic applications.

Magnetron sputtering source

DOEpatents

Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

1994-08-02

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

Magnetron Sputtered Molybdenum Oxide for Application in Polymers Solar Cells

NASA Astrophysics Data System (ADS)

Sendova-Vassileva, M.; Dikov, Hr; Vitanov, P.; Popkirov, G.; Gergova, R.; Grancharov, G.; Gancheva, V.

2016-10-01

Thin films of molybdenum oxide were deposited by radio frequency (RF) magnetron sputtering in Ar from a MoO3 target at different deposition power on glass and silicon substrates. The thickness of the films was determined by profilometer measurements and by ellipsometry. The films were annealed in air at temperatures between 200 and 400°C in air. The optical transmission and reflection spectra were measured. The conductivity of the as deposited and annealed films was determined. The crystal structure was probed by Raman spectroscopy. The oxidation state of the surface was studied by X-ray photoelectron spectroscopy (XPS) spectroscopy. The deposition technique described above was used to experiment with MoOx as a hole transport layer (HTL) in polymer solar cells with bulk hetrojunction active layer, deposited by spin coating. The performance of these layers was compared with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), which is the standard material used in this role. The measured current-voltage characteristics of solar cells with the structure glass/ITO/HTL/Poly(3-hexyl)thiophene (P3HT):[6,6]-phenyl-C61- butyric acid methyl ester (PCBM)/Al demonstrate that the studied MoOx layer is a good HTL and leads to comparable characteristics to those with PEDOT:PSS. On the other hand the deposition by magnetron sputtering guarantees reliable and repeatable HTLs.

Effect of post annealing on structural, optical and dielectric properties of MgTiO3 thin films deposited by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Santhosh Kumar, T.; Bhuyan, R. K.; Pamu, D.

2013-01-01

MgTiO3 (MTO) thin films have been deposited on to quartz and platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The metal-MTO-metal (Ag-MTO-Pt/TiO2/SiO2/Si) thin film capacitors have been fabricated at different oxygen mixing percentage (OMP). The effects of OMP and post annealing on the structural, microstructural, optical and dielectric properties of MTO films were studied. The MTO target has been synthesized by mechanochemical synthesis method. The phase purity of the sputtering target was confirmed from X-ray diffraction pattern and refined to R3bar space group with lattice parameters a = b = 5.0557(12) Å, c = 13.9003(9) Å. The chemical composition of the deposited films was confirmed from EDS spectra and all the films exhibited the composition of the sputtering target. The XRD patterns of the as-deposited films are amorphous and annealing at 700 °C for 1 h induced nanocrystallinity with the improved optical and dielectric properties. The annealed films exhibit refractive index in the range of 2.12-2.19 at 600 nm with an optical bandgap value in between 4.11 and 4.19 eV. The increase in the refractive index and bandgap upon annealing can be attributed to the improvement in packing density, crystallinity, and decrease in porosity ratio. Both the dielectric constant and tan δ decrease with the increase in frequency and were in the range of 13.7-31.11 and 0.006-0.124, respectively. The improvement in dielectric properties with the increase in OMP has been correlated to the reduction in oxygen vacancies, increase in crystallinity and grain size of the films.

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Annealing dependent evolution of columnar nanostructures in RF magnetron sputtered PTFE films for hydrophobic applications

NASA Astrophysics Data System (ADS)

Tripathi, S.; De, Rajnarayan; Maidul Haque, S.; Divakar Rao, K.; Misal, J. S.; Prathap, C.; Das, S. C.; Patidar, Manju M.; Ganesan, V.; Sahoo, N. K.

2018-01-01

Present communication focuses on a relatively less explored direction of producing rough polytetrafluoroethylene (PTFE) surfaces for possible hydrophobic applications. The experiments were carried out to make rough PTFE films without losing much of the transmission, which is an important factor while designing futuristic solar cell protection covers. After annealing temperature optimization, as grown RF magnetron sputtered PTFE films (prepared at 160 W RF power) were subjected to vacuum annealing at 200 °C for different time durations ranging from 1 to 4 h. The films show morphological evolution exhibiting formation and growth of columnar nanostructures that are responsible for roughening of the films due to annealing induced molecular migration and rearrangement. In agreement with this, qualitative analysis of corresponding x-ray reflectivity data shows modification in film thickness, which may again be attributed to the growth of columns at the expense of the atoms of remaining film molecules. However, the observations reveal that the film annealed at 200 °C for 2 h gives a combination of patterned columnar structures and reasonable transmission of >85% (in 500-1000 nm wavelength range), both of which are deteriorated when the films are annealed either at high temperature beyond 200 °C or for long durations >3 h. In addition, attenuated total reflection-Fourier transform infrared spectroscopy results reveal that the molecular bonds remain intact upon annealing at any temperature within the studied range indicating the stable nature of the films.

Effects of thermal treatment on the Mg{sub x}Zn{sub 1−x}O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Chunguang; Jiang, Dayong, E-mail: dayongjiangcust@126.com; Tan, Zhendong

Highlights: • Single-phase wurtzite/cubic Mg{sub x}Zn{sub 1−x}O films were grown by RF magnetron sputtering technique. • We focus on the red-shift caused by annealing the Mg{sub x}Zn{sub 1−x}O films. • MSM-structured visible-blind and solar-blind UV photodetectors were fabricated. - Abstract: A series of single-phase Mg{sub x}Zn{sub 1−x}O films with different Mg contents were prepared on quartz substrates by RF magnetron sputtering technique using different MgZnO targets, and annealed under the atmospheric environment. The absorption edges of Mg{sub x}Zn{sub 1−x}O films can cover the whole near ultraviolet and even the whole solar-blind spectra range, and the solar-blind wurtzite/cubic Mg{sub x}Zn{sub 1−x}Omore » films have been realized successfully by the same method. In addition, the absorption edges of annealed films shift to a long wavelength, which is caused by the diffusion of Zn atoms gathering at the surface during the thermal treatment process. Finally, the truly solar-blind metal-semiconductor-metal structured photodetectors based on wurtzite Mg{sub 0.445}Zn{sub 0.555}O and cubic Mg{sub 0.728}Zn{sub 0.272}O films were fabricated. The corresponding peak responsivities are 17 mA/W at 275 nm and 0.53 mA/W at 250 nm under a 120 V bias, respectively.« less

Silicon Oxycarbide Waveguides for Photonic Applications

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Melloni, Andrea

2018-01-01

Silicon oxycarbide thin films deposited with rf reactive magnetron sputtering a SiC target are exploited to demonstrate photonic waveguides with a high refractive index of 1.82 yielding an index contrast of 18% with silica glass. The propagation losses of the photonic waveguides are measured at the telecom wavelength of 1.55 μm by cut-back technique. The results demonstrate the potential of silicon oxycarbide for photonic applications.

Ordered Magnetic Nanoparticle Arrays on Tunable Substrates for RF Applications

DTIC Science & Technology

2010-09-24

the author(s) and should not contrued as an official Department of the Army position, policy or decision, unless so designated by other documentation...15. “ Sensor applications and spin transport measurements in carbon nanotube composites” –J. Sanders, J. Gass, H. Srikanth, F. K. Perkins and E. S...Research highlights: 1. Magnetron sputtering, characterization and optimization of film growth parameters 2. Design and set up of a dedicated

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2018-05-01

This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

Novel β-TCP Coated Titanium Nanofiber Surface for Enhanced Bone Growth.

PubMed

Lim, Hyun-Pil; Park, Sang-Won; Yun, Kwi-Dug; Park, Chan; Ji, Min-Kyung; Oh, Gye-Jeong; Lee, Jong-Tak; Lee, Kwangmin

2018-02-01

In this study, we examined the effect of β-tricalcium phosphate (β-TCP) coating on alkali-treated CP Grade II titanium surface via RF magnetron sputtering on osteoblast like cell (MC3T3-E1) viability and bone formation in rat tibia. The specimens were divided into three groups; commercially pure titanium (control group), alkali-treated titanium with nanofiber structure (NF group) and β-TCP coating on alkali-treated titanium with nanofiber structure (TNF group). The surface characteristics of specimens were observed under a field emission scanning electron microscope (FE-SEM), and contact angle was measured. The cell viability was assessed in vitro after 1 day, 3 days and 7 days. Implants of 2.0 mm diameter and 5.0 mm length were inserted into the tibia of rats. After 4 wks, the histomorphometric analysis was performed. Group NF and group TNF showed improved hydrophilicity of Ti. Group TNF showed significantly higher cell viability (P < 0.05) after 7 days. The bone to implant contact (BIC) ratio of the control group, NF group, and TNF group were 32.3%, 35.5%, and 63.9%, respectively. The study results suggested that β-TCP coated alkali-treated titanium surface via RF magnetron sputtering might be effective in implant dentistry due to enhanced hydrophilicity, improved cell response, and better osseointegration.

Biocompatibility of GaSb thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Nishimoto, Naoki; Fujihara, Junko; Yoshino, Katsumi

2017-07-01

GaSb may be suitable for biological applications, such as cellular sensors and bio-medical instrumentation because of its low toxicity compared with As (III) compounds and its band gap energy. Therefore, the biocompatibility and the film properties under physiological conditions were investigated for GaSb thin films with or without a surface coating. GaSb thin films were grown on quartz substrates by RF magnetron sputtering, and then coated with (3-mercaptopropyl) trimethoxysilane (MPT). The electrical properties, surface morphology, and crystal structure of the GaSb thin film were unaffected by the MPT coating. The cell viability assay suggested that MPT-coated GaSb thin films are biocompatible. Bare GaSb was particularly unstable in pH9 buffer. Ga elution was prevented by the MPT coating, although the Ga concentration in the pH 9 buffer was higher than that in the other solutions. The surface morphology and crystal structure were not changed by exposure to the solutions, except for the pH 9 buffer, and the thin film properties of MPT-coated GaSb exposed to distilled water and H2O2 in saline were maintained. These results indicate that MPT-coated GaSb thin films are biocompatible and could be used for temporary biomedical devices.

Effect of Ti Doping to Maintain Structural Disorder in InOx-Based Thin-Film Transistors Fabricated by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Aikawa, Shinya

2017-12-01

The effect of Ti doping in an indium oxide (InOx)-based semiconductor is investigated for the thin-film transistor (TFT) property and crystal structure of the film. InOx and Ti-doped InOx (InTiOx) films deposited by RF magnetron sputtering under the same O2 partial pressure conditions were systematically compared. The TFT behavior of the InOx showed higher conductivity than that of the InTiOx and was drastically changed to metallic conduction after annealing at 150 °C. Under the annealing conditions when the electrical transition to the metallic behavior occurred, the InOx film was crystallized. The X-ray diffraction analysis revealed that the shrinkage of the In2O3 unit cell is pronounced in the case of InOx films. Thus, Ti dopants may play the role as a suppressor for shrinkage of the unit cell, i.e. maintaining neighboring In-In distances, in addition to suppression of oxygen vacancies. The In-In distance, which is related to the overlapping of In 5 s orbitals, is considered to be one of the key factor for which InOx-based materials are utilized as conducting films or semiconducting channels.

Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

NASA Astrophysics Data System (ADS)

Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

2013-01-01

Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

Sputter deposition of MgxAlyOz thin films in a dual-magnetron device: a multi-species Monte Carlo model

NASA Astrophysics Data System (ADS)

Yusupov, M.; Saraiva, M.; Depla, D.; Bogaerts, A.

2012-07-01

A multi-species Monte Carlo (MC) model, combined with an analytical surface model, has been developed in order to investigate the general plasma processes occurring during the sputter deposition of complex oxide films in a dual-magnetron sputter deposition system. The important plasma species, such as electrons, Ar+ ions, fast Ar atoms and sputtered metal atoms (i.e. Mg and Al atoms) are described with the so-called multi-species MC model, whereas the deposition of MgxAlyOz films is treated by an analytical surface model. Target-substrate distances for both magnetrons in the dual-magnetron setup are varied for the purpose of growing stoichiometric complex oxide thin films. The metal atoms are sputtered from pure metallic targets, whereas the oxygen flux is only directed toward the substrate and is high enough to obtain fully oxidized thin films but low enough to avoid target poisoning. The calculations correspond to typical experimental conditions applied to grow these complex oxide films. In this paper, some calculation results are shown, such as the densities of various plasma species, their fluxes toward the targets and substrate, the deposition rates, as well as the film stoichiometry. Moreover, some results of the combined model are compared with experimental observations. Note that this is the first complete model, which can be applied for large and complicated magnetron reactor geometries, such as dual-magnetron configurations. With this model, we are able to describe all important plasma species as well as the deposition process. It can also be used to predict film stoichiometries of complex oxide films on the substrate.

Optical and structural properties of sputtered CdS films for thin film solar cell applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Donguk; Park, Young; Kim, Minha

2015-09-15

Graphical abstract: Photo current–voltage curves (a) and the quantum efficiency (QE) (b) for the solar cell with CdS film grown at 300 °C. - Highlights: • CdS thin films were grown by a RF magnetron sputtering method. • Influence of growth temperature on the properties of CdS films was investigated. • At higher T{sub g}, the crystallinity of the films improved and the grains enlarged. • CdS/CdTe solar cells with efficiencies of 9.41% were prepared at 300 °C. - Abstract: CdS thin films were prepared by radio frequency magnetron sputtering at various temperatures. The effects of growth temperature on crystallinity,more » surface morphology and optical properties of the films were characterized with X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Raman spectra, UV–visible spectrophotometry, and photoluminescence (PL) spectra. As the growth temperature was increased, the crystallinity of the sputtered CdS films was improved and the grains were enlarged. The characteristics of CdS/CdTe thin film solar cell appeared to be significantly influenced by the growth temperature of the CdS films. Thin film CdS/CdTe solar cells with efficiencies of 9.41% were prepared at a growth temperature of 300 °C.« less

Characterization of Magnetron Sputtered Copper-Nickel Thin Film and Alloys

DTIC Science & Technology

2016-09-01

ARL-TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys...TR-7783 ● SEP 2016 US Army Research Laboratory Characterization of Magnetron Sputtered Copper-Nickel Thin Films and Alloys by Eugene...

Solid oxide fuel cells with (La,Sr)(Ga,Mg)O3-δ electrolyte film deposited by radio-frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Sea-Fue; Lu, His-Chuan; Hsu, Yung-Fu; Hu, Yi-Xuan

2015-05-01

In this study, solid oxide fuel cells (SOFCs) containing a high quality La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) film deposited on anode supported substrate using RF magnetron sputtering are successfully prepared. The anode substrate is composed of two functional NiO/Sm0.2Ce0.8O2-δ (SDC) composite layers with ratios of 60/40 wt% and 50/50 wt% and a current collector layer of pure NiO. The as-deposited LSGM film appears to be amorphous in nature. After post-annealing at 1000 °C, a uniform and dense polycrystalline film with a composition of La0.87Sr0.13Ga0.85Mg0.15O3-δ and a thickness of 3.8 μm is obtained, which was well adhered to the anode substrate. A composite LSGM/La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF) layer, with a ratio of 30/70 wt%, is used as the cathode. The SOFC prepared reveals a good mechanical integrity with no sign of cracking, delamination, or discontinuity among the interfaces. The total cell resistance of a single cell with LSGM electrolyte film declines from 0.60 to 0.10 Ω cm2 as the temperature escalates from 600 to 800 °C and the open circuit voltage (OCV) ranges from 0.85 to 0.95 V. The maximum power density (MPD) of the single cell is reported as 0.65, 1.02, 1.30, 1.42, and 1.38 W cm-2 at 600, 650, 700, 750, and 800 °C, respectively. The good cell performance leads to the conclusion that RF magnetron sputtering is a feasible deposition method for preparing good quality LSGM films in SOFCs.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Full System Model of Magnetron Sputter Chamber - Proof-of-Principle Study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C; Gilmer, G; Zepeda-Ruiz, L

2007-05-04

The lack of detailed knowledge of internal process conditions remains a key challenge in magnetron sputtering, both for chamber design and for process development. Fundamental information such as the pressure and temperature distribution of the sputter gas, and the energies and arrival angles of the sputtered atoms and other energetic species is often missing, or is only estimated from general formulas. However, open-source or low-cost tools are available for modeling most steps of the sputter process, which can give more accurate and complete data than textbook estimates, using only desktop computations. To get a better understanding of magnetron sputtering, wemore » have collected existing models for the 5 major process steps: the input and distribution of the neutral background gas using Direct Simulation Monte Carlo (DSMC), dynamics of the plasma using Particle In Cell-Monte Carlo Collision (PIC-MCC), impact of ions on the target using molecular dynamics (MD), transport of sputtered atoms to the substrate using DSMC, and growth of the film using hybrid Kinetic Monte Carlo (KMC) and MD methods. Models have been tested against experimental measurements. For example, gas rarefaction as observed by Rossnagel and others has been reproduced, and it is associated with a local pressure increase of {approx}50% which may strongly influence film properties such as stress. Results on energies and arrival angles of sputtered atoms and reflected gas neutrals are applied to the Kinetic Monte Carlo simulation of film growth. Model results and applications to growth of dense Cu and Be films are presented.« less

Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Krishnan, R. Reshmi; Sanjeev, Ganesh; Prabhu, Radhakrishna; Pillai, V. P. Mahadevan

2018-02-01

Undoped and Cu-doped In2O3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), lateral scanning electron microscopic image analysis, energy-dispersive x-ray (EDX) spectroscopy, micro-Raman, and ultraviolet-visible (UV-vis) spectroscopy. Moderate doping of Cu in In2O3 enhanced the intensity of (222) peak, indicating alignment of crystalline grains along <111>. Electron beam irradiation promoted orientation of crystalline grains along <111> in undoped and moderately Cu-doped films. EDX spectroscopic and XPS analyses revealed incorporation of Cu2+ ions in the lattice. The transmittance of Cu-doped films decreased with e-beam irradiation. Systematic reduction of the bandgap energy with increase in Cu doping concentration was seen in unirradiated and electron-beam-irradiated films.

Room temperature ferromagnetism in Cu doped ZnO

NASA Astrophysics Data System (ADS)

Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

2018-05-01

We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

Are the argon metastables important in high power impulse magnetron sputtering discharges?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gudmundsson, J. T., E-mail: tumi@hi.is; Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik; Lundin, D.

2015-11-15

We use an ionization region model to explore the ionization processes in the high power impulse magnetron sputtering (HiPIMS) discharge in argon with a titanium target. In conventional dc magnetron sputtering (dcMS), stepwise ionization can be an important route for ionization of the argon gas. However, in the HiPIMS discharge stepwise ionization is found to be negligible during the breakdown phase of the HiPIMS pulse and becomes significant (but never dominating) only later in the pulse. For the sputtered species, Penning ionization can be a significant ionization mechanism in the dcMS discharges, while in the HiPIMS discharge Penning ionization ismore » always negligible as compared to electron impact ionization. The main reasons for these differences are a higher plasma density in the HiPIMS discharge, and a higher electron temperature. Furthermore, we explore the ionization fraction and the ionized flux fraction of the sputtered vapor and compare with recent experimental work.« less

Study of cobalt mononitride thin films prepared using DC and high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Rachana, E-mail: dr.rachana.gupta@gmail.com; Pandey, Nidhi; Behera, Layanta

2016-05-23

In this work we studied cobalt mononitride (CoN) thin films deposited using dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS). A Co target was sputtered using pure N{sub 2} gas alone as the sputtering medium. Obtained long-range structural ordering was studies using x-ray diffraction (XRD), short-range structure using Co L{sub 2,3} and N K absorption edges using soft x-ray absorption spectroscopy (XAS) and the surface morphology using atomic force microscopy (AFM). It was found that HiPIMS deposited films have better long-range ordering, better stoichiometric ratio for mononitride composition and smoother texture as compared to dcMS deposited films.more » In addition, the thermal stability of HiPIMS deposited CoN film seems to be better. On the basis of different type of plasma conditions generated in HiPIMS and dcMS process, obtained results are presented and discussed.« less

The target material influence on the current pulse during high power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Moens, Filip; Konstantinidis, Stéphanos; Depla, Diederik

2017-10-01

The current-time characteristic during high power pulsed magnetron sputtering is measured under identical conditions for seventeen different target materials. Based on physical processes such as gas rarefaction, ion-induced electron emission, and electron impact ionization, two test parameters were derived that significantly correlate with specific features of the current-time characteristic: i) the peak current is correlated to the momentum transfer between the sputtered material and the argon gas, ii) while the observed current plateau after the peak is connected to the metal ionization rate.

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

DOE PAGES

Anders, André

2014-09-02

In this study, high power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in thismore » review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.« less

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

NASA Technical Reports Server (NTRS)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Simulation of the electric potential and plasma generation coupling in magnetron sputtering discharges

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Krueger, Dennis; Schmidt, Frederik; Brinkmann, Ralf Peter; Mussenbrock, Thomas

2016-09-01

Magnetron sputtering typically operated at low pressures below 1 Pa is a widely applied deposition technique. For both, high power impulse magnetron sputtering (HiPIMS) as well as direct current magnetron sputtering (dcMS) the phenomenon of rotating ionization zones (also referred to as spokes) has been observed. A distinct spatial profile of the electric potential has been associated with the latter, giving rise to low, mid, and high energy groups of ions observed at the substrate. The adherent question of which mechanism drives this process is still not fully understood. This query is approached using Monte Carlo simulations of the heavy particle (i.e., ions and neutrals) transport consistently coupled to a pre-specified electron density profile via the intrinsic electric field. The coupling between the plasma generation and the electric potential, which establishes correspondingly, is investigated. While the system is observed to strive towards quasi-neutrality, distinct mechanisms governing the shape of the electric potential profile are identified. This work is supported by the German Research Foundation (DFG) in the frame of the transregional collaborative research centre TRR 87.

Elementary surface processes during reactive magnetron sputtering of chromium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monje, Sascha; Corbella, Carles, E-mail: carles.corbella@rub.de; Keudell, Achim von

2015-10-07

The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidationmore » sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.« less

Coating multilayer material with improved tribological properties obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

2017-02-01

This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

Excellent vacuum tribological properties of Pb/PbS film deposited by RF magnetron sputtering and ion sulfurizing.

PubMed

Guozheng, Ma; Binshi, Xu; Haidou, Wang; Shuying, Chen; Zhiguo, Xing

2014-01-08

Soft metal Pb film of 3 μm in thickness was deposited on AISI 440C steel by RF magnetron sputtering, and then some of the Pb film samples were treated by low-temperature ion sulfurizing (LTIS) and formed Pb/PbS composite film. Tribological properties of the Pb and Pb/PbS films were tested contrastively in vacuum and air condition using a self-developed tribometer (model of MSTS-1). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were adopted to analyze the microstructure and chemical construction of the films and their worn surfaces. The results show that a mass of Pb was changed to PbS during the process of LTIS. In air condition, owing to the severe oxidation effect, pure Pb film showed relatively high friction coefficients (0.6), and Pb/PbS composite film also lost its friction-reduction property after sliding for a short time. In a vacuum, the average friction coefficients of Pb film were about 0.1, but the friction coefficient curve fluctuated obviously. And the Pb/PbS composite film exhibited excellent tribological properties in vacuum condition. Its friction coefficients keep stable at a low value of about 0.07 for a long time. If takes the value of friction coefficients exceeding 0.2 continuously as a criterion of lubrication failure, the sliding friction life of Pb/PbS film was as long as 3.2 × 10(5) r, which is 8 times of that of the Pb film. It can be concluded that the Pb/PbS film has excellent vacuum tribological properties and important foreground for applying in space solid lubrication related fields.

Study the effect of nitrogen flow rate on tribological properties of tantalum nitride based coatings

NASA Astrophysics Data System (ADS)

Chauhan, Dharmesh B.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Makwana, Nishant S.; Dave, Divyeshkumar P.; Rawal, Sushant K.

2018-05-01

Tantalum Nitride (TaN) based coatings are well-known for their high temperature stability and chemical inertness. We have studied the effect of nitrogen flow rate variation on the structural and tribological properties of TaN based coating deposited by RF magnetron sputtering process. The nitrogen flow rate was varied from 5 to 30 sccm. X-ray diffractometer (XRD) and Atomic Force Microscopy (AFM) were used to determine structure and surface topography of coating. Pin on disc tribometer was used to determine tribological properties of coating. TaN coated brass and mild steel substrates shows higher wear resistance compared to uncoated substrates of brass and mild steel.

Contact Resistance and Stability Analysis of Oxide-Based Thin Film Transistors

DTIC Science & Technology

2006-09-19

layer (~ 50 nm) is deposited via RF magnetron sputtering from a 2 inch target (Cerac, Inc.; ZnO and IGO (1:1 molar ratio of In2O3: Ga2O3 )) at a pressure...10.2 600 ~ 50 IGO (1:1, In2O3: Ga2O3 ) 90%/10% 5 ~ 3.7 ~ 10.2 600 ~ 50 Table 4.1: Summary of process parameters for TFTs fabricated on thermal silicon...oxide and furnace annealed. Channel Material Wet Etch Etch Rate ZnO ~ 0.01 M HCl ~ 17.5 Å/s IGO (1:1, In2O3: Ga2O3 ) ~ 2 M HCl ~ 6.3 Å/s

Magneto-optical properties of PdCo based multilayered films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, K.; Tsunashima, S.; Iwata, S.

1989-09-01

Magneto-optical and magnetic properties of multilayered films composed of PdCo alloy and other noble metal (Pd, Pt or Cu) layers are investigated. Multilayered films were prepared by RF magnetron sputtering method. Kerr rotation spectra (275nm-800nm) of Pd/Co multilayered films resemble those of PdCo alloys. In the films composed of PdCo alloy and Pt bilayers, the Kerr rotation increases with increasing Pt content while the perpendicular anisotropy decreases.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kana, J. B. Kana; Department of physics, University of Yaounde I, P.O. Box 812 Yaounde; Ndjaka, J. M.

2008-09-23

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} weremore » well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.« less

Antimicrobial effect of TiO2 doped with Ag and Cu on Escherichia coli and Pseudomonas putida

NASA Astrophysics Data System (ADS)

Angelov, O.; Stoyanova, D.; Ivanova, I.

2016-10-01

Antimicrobial effect of TiO2 doped with Ag and Cu on Gram-negative bacteria Escherichia coli and Pseudomonas putida is studied. The thin films are deposited on glass substrates without heating during the deposition by r.f. magnetron co-sputtering of TiO2 target and pieces of Ag and Cu. The studied films, thickness about 65 nm, were as deposited and annealed (5200C, 4h, N2+5%H2, 4Pa). The as deposited thin films TiO2:Ag:Cu have band gap energy of 3.56 eV little higher than the band gap of crystalline anatase TiO2 which can be explained with the quantum effect of the granular structure of r.f. magnetron sputtered films. The annealed samples have band gap of 2.52 eV due to formation of donor levels from Ag and Cu atoms near the bottom of the conduction band. The toxic effect was determined through the classical Koch's method and the optical density measurements at λ=610 nm. The as deposited TiO2:Ag:Cu thin films demonstrate stronger inhibition effect - bactericidal for P. putida and bacteriostatic for E. coli (up to the 6th hour) in comparison with the annealed samples. The both methods of study show the same trends of the bacterial growth independently of their different sensitivity which confirms the observed effect.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Understanding of gas phase deposition of reactive magnetron sputtered TiO2 thin films and its correlation with bactericidal efficiency

NASA Astrophysics Data System (ADS)

Panda, A. B.; Mahapatra, S. K.; Barhai, P. K.; Das, A. K.; Banerjee, I.

2012-10-01

Nanostructured TiO2 thin films were deposited using RF reactive magnetron sputtering at different O2 flow rates (20, 30, 50 and 60 sccm) and constant RF power of 200 W. In situ investigation of the nucleation and growth of the films was made by Optical Emission Spectroscopy (OES). The nano amorphous nature as revealed from X-ray diffraction (XRD) of the as deposited films and abundance of the Ti3+ surface oxidation states and surface hydroxyl group (OH-) in the films deposited at 50 sccm as determined from X-ray photo electron spectroscopy (XPS) was explained on the basis of emission spectra studies. The increase in band gap and decrease in particle size with O2 flow rate was observed from transmission spectra of UV-vis spectroscopy. Photoinduced hydrophilicity has been studied using Optical Contact Angle (OCA) measurement. The post irradiated films showed improved hydrophilicity. The bactericidal efficiency of these films was investigated taking Escherichia coli as model bacteria. The films deposited at 50 sccm shows better bactericidal activity as revealed from the optical density (OD) measurement. The qualitative analysis of the bactericidal efficiency was depicted from Scanning Electron Microscope images. A correlation between bactericidal efficiency and the deposited film has been established and explained on the basis of nucleation growth, band gap and hydrophilicity of the films.

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

PubMed Central

Sinnarasa, Inthuga; Thimont, Yohann; Presmanes, Lionel; Barnabé, Antoine; Tailhades, Philippe

2017-01-01

P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 °C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 °C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 °C. At a measurement temperature of 40 °C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS²) was 6 µW·m−1·K−2 at 40 °C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 °C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed. PMID:28654011

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

Reversible phase transition in vanadium oxide films sputtered on metal substrates

NASA Astrophysics Data System (ADS)

Palai, Debajyoti; Carmel Mary Esther, A.; Porwal, Deeksha; Pradeepkumar, Maurya Sandeep; Raghavendra Kumar, D.; Bera, Parthasarathi; Sridhara, N.; Dey, Arjun

2016-11-01

Vanadium oxide films, deposited on aluminium (Al), titanium (Ti) and tantalum (Ta) metal substrates by pulsed RF magnetron sputtering at a working pressure of 1.5 x10-2 mbar at room temperature are found to display mixed crystalline vanadium oxide phases viz., VO2, V2O3, V2O5. The films have been characterized by field-emission scanning electron microscopy, X-ray diffraction, differential scanning calorimetry (DSC) and X-ray photoelectron spectroscopy, and their thermo-optical and electrical properties have been investigated. Studies of the deposited films by DSC have revealed a reversible-phase transition found in the temperature range of 45-49 °C.

Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

DTIC Science & Technology

2015-03-01

AFRL-RX-WP-JA-2015-0185 MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON SPUTTERING (POSTPRINT) A. N. Reed...COVERED (From – To) 29 January 2013 – 16 February 2015 4. TITLE AND SUBTITLE MICROSTRUCTURE OF ZNO THIN FILMS DEPOSITED BY HIGH POWER IMPULSE MAGNETRON...ABSTRACT High power impulse magnetron sputtering was used to deposit thin (~100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates

Synthesis and characterization of delafossite thin films by reactive RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Asmat Uceda, Martin Antonio

This work presents a comparative study on optical and electrical properties of CuAlO2 thin films on sapphire (0001) substrates deposited with two different growth conditions using reactive RF-magnetron sputtering technique from metallic Cu and Al targets. CuAlO2 is a very promising material for transparent electronic applications, it is intended that comparison of results obtained from both approaches, could lead to optimization and control of the physical properties of this material, namely its electrical conductivity and optical transmittance. All samples were heat treated at 1100°C using rapid thermal annealing with varying time and rate of cooling. The effect of sputtering conditions and different annealing time on phase formation and evolution is studied with X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that for most of the samples CuAlO2 phase is formed after 60 min of annealing time, but secondary phases were also present that depend on the deposition conditions. However, pure CuAlO2 phase was obtained for annealed CuO on sapphire films with annealing time of 60 min. The optical properties obtained from UV-Visible spectroscopic measurement reveals indirect and direct optical band gaps for CuAlO2 films and were found to be 2.58 and 3.72 eV respectively. The films show a transmittance of about 60% in the visible range. Hall effect measurements indicate p-type conductivity. Van der Pauw technique was used to measure resistivity of the samples. The highest electrical conductivity and charge carrier concentration obtained were of 1.01x10-1S.cm -1 and 3.63 x1018 cm-3 respectively.

Titanium dioxide fine structures by RF magnetron sputter method deposited on an electron-beam resist mask

NASA Astrophysics Data System (ADS)

Hashiba, Hideomi; Miyazaki, Yuta; Matsushita, Sachiko

2013-09-01

Titanium dioxide (TiO2) has been draw attention for wide range of applications from photonic crystals for visible light range by its catalytic characteristics to tera-hertz range by its high refractive index. We present an experimental study of fabrication of fine structures of TiO2 with a ZEP electron beam resist mask followed by Ti sputter deposition techniques. A TiO2 thin layer of 150 nm thick was grown on an FTO glass substrate with a fine patterned ZEP resist mask by a conventional RF magnetron sputter method with Ti target. The deposition was carried out with argon-oxygen gases at a pressure of 5.0 x 10 -1 Pa in a chamber. During the deposition, ratio of Ar-O2 gas was kept to the ratio of 2:1 and the deposition ratio was around 0.5 Å/s to ensure enough oxygen to form TiO2 and low temperature to avoid deformation of fine pattern of the ZPU resist mask. Deposited TiO2 layers are white-transparent, amorphous, and those roughnesses are around 7 nm. Fabricated TiO2 PCs have wider TiO2 slabs of 112 nm width leaving periodic 410 x 410 nm2 air gaps. We also studied transformation of TiO2 layers and TiO2 fine structures by baking at 500 °C. XRD measurement for TiO2 shows that the amorphous TiO2 transforms to rutile and anatase forms by the baking while keeping the same profile of the fine structures. Our fabrication method can be one of a promising technique to optic devices on researches and industrial area.

Metal copper films deposited on cenosphere particles by magnetron sputtering method

NASA Astrophysics Data System (ADS)

Yu, Xiaozheng; Xu, Zheng; Shen, Zhigang

2007-05-01

Metal copper films with thicknesses from several nanometres to several micrometres were deposited on the surface of cenosphere particles by the magnetron sputtering method under different working conditions. An ultrasonic vibrating generator equipped with a conventional magnetron sputtering apparatus was used to prevent the cenosphere substrates from accumulating during film growth. The surface morphology, the chemical composition, the average grain size and the crystallization of cenosphere particles were characterized by field emission scanning electron microscopy (FE-SEM), inductively coupled plasma-atom emission spectrometer, x-ray photoelectron spectroscopy and x-ray diffraction (XRD) analysis, respectively, before and after the plating process. The results indicate that the copper films were successfully deposited on cenosphere particles. It was found from the FE-SEM results that the films were well compacted and highly uniform in thickness. The XRD results show that the copper film coated on cenospheres has a face centred cubic structure and the crystallization of the film sample increases with increasing sputtering power.

Hybrid Co-deposition of Mixed-Valent Molybdenum-Germanium Oxides (MoxGeyOz): A Route to Tunable Optical Transmission (Postprint)

DTIC Science & Technology

2015-08-05

to increased doping levels in indirect semiconductors [84]. The slope, and magnitude of the transmission curves continue to decrease alongside UL...periodically aluminium- doped zinc oxide thin films, Thin Solid Films 519 (2011) 2280–2286. [2] T. Minami, H. Nanto, S. Takata, Highly conductive and...transparent aluminum doped zinc oxide thin films prepared by RF magnetron sputtering, Jpn. J. Appl. Phys. 23 (1984) L280. [3] T. Minami, Present status of

Properties of planar structures based on Policluster films of diamond and AlN

NASA Astrophysics Data System (ADS)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Mechanical properties and biocompatibility of the sputtered Ti doped hydroxyapatite.

PubMed

Vladescu, A; Padmanabhan, S C; Ak Azem, F; Braic, M; Titorencu, I; Birlik, I; Morris, M A; Braic, V

2016-10-01

The hydroxyapatite enriched with Ti were prepared as possible candidates for biomedical applications especially for implantable devices that are in direct contact to the bone. The hydroxyapatites with different Ti content were prepared by RF magnetron sputtering on Ti-6Al-4V alloy using pure hydroxyapatite and TiO2 targets. The content of Ti was modified by changing the RF power fed on TiO2 target. The XPS and FTIR analyses revealed the presence of hydroxyapatite structure. The hardness and elastic modulus of the hydroxyapatite were increased by Ti addition. After 5 days of culture, the cell viability of the Ti-6Al-4V was enhanced by depositing with undoped or doped hydroxyapatite. The Ti additions led to an increase in cell viability of hydroxyapatite, after 5 days of culture. The electron microscopy showed the presence of more cells on the surface of Ti-enriched hydroxyapatite than those observed on the surface of the uncoated alloys or undoped hydroxyapatite. Copyright © 2016 Elsevier Ltd. All rights reserved.

Phase separation in NiCrN coatings induced by N2 addition in the gas phase: A way to generate magnetic thin films by reactive sputtering of a non-magnetic NiCr target

NASA Astrophysics Data System (ADS)

Luciu, I.; Duday, D.; Choquet, P.; Perigo, E. A.; Michels, A.; Wirtz, T.

2016-12-01

Magnetic coatings are used for a lot of applications from data storage in hard discs, spintronics and sensors. Meanwhile, magnetron sputtering is a process largely used in industry for the deposition of thin films. Unfortunately, deposition of magnetic coatings by magnetron sputtering is a difficult task due to the screening effect of the magnetic target lowering the magnetic field strength of the magnet positioned below the target, which is used to generate and trap ions in the vicinity of the target surface to be sputtered. In this work we present an efficient method to obtain soft magnetic thin films by reactive sputtering of a non-magnetic target. The aim is to recover the magnetic properties of Ni after dealloying of Ni and Cr due to the selective reactivity of Cr with the reactive nitrogen species generated during the deposition process. The effects of nitrogen content on the dealloying and DC magnetron sputtering (DCMS) deposition processes are studied here. The different chemical compositions, microstructures and magnetic properties of DCMS thin films obtained by sputtering in reactive gas mixtures with different ratios of Ar/N2 from a non-magnetic Ni-20Cr target have been determined. XPS data indicate that the increase of nitrogen content in the films has a strong influence on the NiCr phase decomposition into Ni and CrN, leading to ferromagnetic coatings due to the Ni phase. XRD results show that the obtained Ni-CrN films consist of a metallic fcc cubic Ni phase mixed with fcc cubic CrN. The lattice parameter decreases with the N2 content and reaches the theoretical value of the pure fcc-Ni, when Cr is mostly removed from the Ni-Cr phase. Dealloying of Cr from a Ni80-Cr20 solid solution is achieved in our experimental conditions and the deposition of Ni ferromagnetic coatings embedding CrN from a non-magnetic target is possible with reactive DC magnetron sputtering.

Effects of post-deposition annealing ambient on band alignment of RF magnetron-sputtered Y2O3 film on gallium nitride

PubMed Central

2013-01-01

The effects of different post-deposition annealing ambients (oxygen, argon, forming gas (95% N2 + 5% H2), and nitrogen) on radio frequency magnetron-sputtered yttrium oxide (Y2O3) films on n-type gallium nitride (GaN) substrate were studied in this work. X-ray photoelectron spectroscopy was utilized to extract the bandgap of Y2O3 and interfacial layer as well as establishing the energy band alignment of Y2O3/interfacial layer/GaN structure. Three different structures of energy band alignment were obtained, and the change of band alignment influenced leakage current density-electrical breakdown field characteristics of the samples subjected to different post-deposition annealing ambients. Of these investigated samples, ability of the sample annealed in O2 ambient to withstand the highest electric breakdown field (approximately 6.6 MV/cm) at 10−6 A/cm2 was related to the largest conduction band offset of interfacial layer/GaN (3.77 eV) and barrier height (3.72 eV). PMID:23360596

Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

PubMed

Singh, Shaivalini; Chakrabarti, P

2012-03-01

We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

Electrical Conducting and Mechanism of Oxygen-Deficient Tin Oxide Films Deposited by RF Magnetron Sputtering at Various O2/Ar Ratios

NASA Astrophysics Data System (ADS)

Wang, Qi; Wang, Chengbiao; Lv, Changchun; Wang, Yang; Peng, Zhijian; Fu, Xiuli

Oxygen-deficient tin oxide thin films were prepared by radiofrequency magnetron sputtering with a sintered non-stoichiometric tin oxide ceramic target under an atmosphere of various ratios of O2/Ar from pure Ar to 1:1. X-ray diffraction analysis showed that the thin films were polycrystalline with relatively strong (1 1 0), (1 0 1) and (2 1 1) diffraction peaks. Scanning electron microscopy observation revealed that the thin films prepared at different O2/Ar ratios were all of relatively dense and homogeneous structure. With increasing O2/Ar ratio, the grain size of the films decreased slightly, and their chemical composition became close to the stoichiometric SnO2; but the deposition rate as well as film thickness increased first and then decreased sharply. It was revealed that the main defect in obtained films was oxygen vacancy (VO), and as the O2/Ar ratio increased, the concentration of VO fell down monotonously, which would lead to an increased electrical resistivity.

Effect of temperature on NH3 sensing by ZnO: Mg thin film grown by radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Vinoth, E.; Gopalakrishnan, N.

2018-04-01

Undoped and Mg doped (at l0 mol %) ZnO thin films have been grown on glass substrates by using the RF magnetron sputtering. The structural properties of the fabricated thin films were studied by X-ray diffraction analysis and it was found hexagonal wurtzite phase and preferential orientation along (002) of both films. Green Band Emission peaks in the Photoluminescence spectra confirm the structural defects such as oxygen vacancies (Vo) in the films. Uniform distribution of spherical shape morphology of grains observed in the both films by FESEM. However, the growth of grains was found in the Mg doped thin film. The temperature dependent ammonia sensing is done by the indigenously made gas sensing setup. The gas response of the both films was increased as the temperature increases, attains maximum at 75° C and then decreases. Response and recovery time measurementswere donefor boththe films and it shows the fast response time and quick recovery for doped thin film compared to the pure ZnO thin film.

Abrasion resistant low friction and ultra-hard magnetron sputtered AlMgB14 coatings

NASA Astrophysics Data System (ADS)

Grishin, A. M.

2016-04-01

Hard aluminum magnesium boride films were fabricated by RF magnetron sputtering from a single stoichiometric AlMgB14 ceramic target. X-ray amorphous AlMgB14 films are very smooth. Their roughness does not exceed the roughness of Si wafer and Corning glass used as the substrates. Dispersion of refractive index and extinction coefficient were determined within 300 to 2500 nm range for the film deposited onto Corning glass. Stoichiometric in-depth compositionally homogeneous 2 μm thick films on the Si(100) wafer possess the peak values of nanohardness 88 GPa and Young’s modulus 517 GPa at the penetration depth of 26 nm and, respectively, 35 GPa and 275 GPa at 200 nm depth. Friction coefficient was found to be 0.06. The coating scratch adhesion strength of 14 N was obtained as the first chipping of the coating whereas its spallation failure happened at 21 N. These critical loads and the work of adhesion, estimated as high as 18.4 J m-2, surpass characteristics of diamond like carbon films deposited onto tungsten carbide-cobalt (WC-Co) substrates.

Comparative study of ITO and TiN fabricated by low-temperature RF biased sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simon, Daniel K., E-mail: daniel.simon@namlab.com; Schenk, Tony; Dirnstorfer, Ingo

2016-03-15

Radio frequency (RF) biasing induced by a second plasma source at the substrate is applied to low-temperature sputtering processes for indium tin oxide (ITO) and titanium nitride (TiN) thin films. Investigations on crystal structure and surface morphology show that RF-biased substrate plasma processes result in a changed growth regime with different grain sizes and orientations than those produced by processes without a substrate bias. The influence of the RF bias is shown comparatively for reactive RF-sputtered ITO and reactive direct-current-sputtered TiN. The ITO layers exhibit an improved electrical resistivity of 0.5 mΩ cm and an optical absorption coefficient of 0.5 × 10{sup 4 }cm{supmore » −1} without substrate heating. Room-temperature sputtered TiN layers are deposited that possess a resistivity (0.1 mΩ cm) of 3 orders of magnitude lower than, and a density (5.4 g/cm{sup 3}) up to 45% greater than, those obtained from layers grown using the standard process without a substrate plasma.« less

High power impulse magnetron sputtering and its applications

NASA Astrophysics Data System (ADS)

Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

2018-04-01

High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Jijun; Wang, Minqiang, E-mail: mqwang@mail.xjtu.edu.cn; Zhang, Xiangyu

2014-12-08

In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situmore » sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites.« less

Effectiveness of BaTiO 3 dielectric patches on YBa 2Cu 3O 7 thin films for MEM switches

DOE PAGES

Vargas, J.; Hijazi, Y.; Noel, J.; ...

2014-05-12

A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniquesmore » as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2Cu 3O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.« less

Tribological and structural properties of titanium nitride and titanium aluminum nitride coatings deposited with modulated pulsed power magnetron sputtering

NASA Astrophysics Data System (ADS)

Ward, Logan

The demand for economical high-performance materials has brought attention to the development of advanced coatings. Recent advances in high power magnetron sputtering (HPPMS) have shown to improve tribological properties of coatings. These coatings offer increased wear and oxidation resistance, which may facilitate the use of more economical materials in harsh applications. This study demonstrates the use of novel forms of HPPMS, namely modulated pulsed-power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS), for depositing TiN and Ti1-xAlxN tribological coatings on commonly used alloys, such as Ti-6Al-4V and Inconel 718. Both technologies have been shown to offer unique plasma characteristics in the physical vapor deposition (PVD) process. High power pulses lead to a high degree of ionization compared to traditional direct-current magnetron sputtering (DCMS) and pulsed magnetron sputtering (PMS). Such a high degree of ionization was previously only achievable by cathodic arc deposition (CAD); however, CAD can lead to increased macroparticles that are unfavorable in high friction and corrosive environments. MPPMS, DOMS, and other HPPMS techniques offer unique plasma characteristics and have been shown to produce coatings with refined grain structure, improved density, hardness, adhesion, and wear resistance. Using DOMS and MPPMS, TiN and Ti1-xAlxN coatings were deposited using PMS to compare microstructures and tribological performance. For Ti1-xAlxN, two sputtering target compositions, Ti 0.5Al0.5 and Ti0.3Al0.7, were used to evaluate the effects of MPPMS on the coating's composition and tribological properties. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were used to characterize microstructure and crystallographic texture. Several tribological properties were evaluated including: wear rate, coefficient of friction, adhesion, and nanohardness. Results show that substrate material can have a significant effect on adhesion and the mechanical response between the coating and substrate. Depending on deposition parameters and the selected material MPPMS and DOMS are promising alternatives to DCMS, PMS, and CAD.

Fabrication and properties of Nd(Tb,Dy)Co/Cr films with perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Cheng, Weiming; Miao, Xiangshui; Yan, Junbing; Cheng, Xiaomin

2009-08-01

Light rare earth-heavy rare earth-transition metal films (LRE-HRE-TM)have large saturation magnetization (Ms) and are the promising media for hybrid recording. In this paper, Nd(Tb,Dy)Co/Cr films with perpendicular magnetic anisotropy were successfully fabricated onto glass substrate by RF magnetron sputtering and the effects of sputtering technology parameters and Nd substitution for HRE atoms on the magnetic properties were investigated. It was found that when the sputtering power and sputtering time are 250W and 4min, respectively, the magnetic properties of Nd(Tb,Dy)Co/Cr films obtain optimization, perpendicular coercivity, Ms and remanence square ratio(S) of NdTbCo/Cr film reach 3.8kOe, 247emu/cm3 and 0.801, respectively. With the increasing of Nd concentration, Ms increases, while the coercivity (Hc)and the temperature stability of magnetic properties decrease distinctly. These results can be explained by the ferri-magnetic structure of the RE-TM alloy.

Optical properties of zinc titanate perovskite prepared by reactive RF sputtering

NASA Astrophysics Data System (ADS)

Müllerová, Jarmila; Šutta, Pavol; Medlín, Rostislav; Netrvalová, Marie; Novák, Petr

2017-12-01

In this paper we report results from optical transmittance spectroscopy complemented with data on structure from XRD measurements to determine optical properties of a series of ZnTiO3 perovskite thin films deposited on glass by reactive magnetron co-sputtering. The members of the series differ by the titanium content that was revealed as an origin of the changes not only in structure but also in dispersive optical properties. Low porosity has been discovered and calculated using the Bruggeman effective medium approximation. An apparent blue-shift of the optical band gap energies with increasing titanium content was observed. The observed band gap engineering is a good prospective for eg optoelectronic and photocatalytic applications of ZnTiO3.

Nylon-sputtered nanoparticles: fabrication and basic properties

NASA Astrophysics Data System (ADS)

Polonskyi, O.; Kylián, O.; Solař, P.; Artemenko, A.; Kousal, J.; Slavínská, D.; Choukourov, A.; Biederman, H.

2012-12-01

Nylon-sputtered nanoparticles were prepared using a simple gas aggregation cluster source based on a planar magnetron (Haberland type) and equipped with a nylon target. Plasma polymer particles originated in an aggregation chamber and travelled to a main (deposition) chamber with a gas flow through an orifice. The deposited nanoparticles were observed to have a cauliflower-like structure. The nanoparticles were found to be nitrogen-rich with N/C ratio close to 0.5. An increase in rf power from 60 to 100 W resulted in a decrease in mean particle size from 210 to 168 nm whereas an increase in their residence time in the cluster source from 0.7 to 4.6 s resulted in an increase in the size from 73 to 231 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Highland, M. J.; Hruszkewycz, S. O.; Fong, D. D.

Here, we report on the synthesis, stability, and local structure of In 2O 3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In 2O 3 deposited onto (001)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski–Krastanov growth mode at a temperature of 850°C, resulting in epitaxial, truncated square pyramids with (111) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In 2O 3 from the magnetron source. Lastly, we also find that the internal lattice structure of onemore » such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In 2O 3 nanostructures and films.« less

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H. F.; Chua, S. J.; Hu, G. X.

2007-10-15

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Shailesh, E-mail: shailesh.sharma6@mail.dcu.ie; Impedans Limited, Chase House, City Junction Business Park, Northern Cross, D17 AK63, Dublin 17; Gahan, David, E-mail: david.gahan@impedans.com

A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this researchmore » work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.« less

Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films

NASA Technical Reports Server (NTRS)

Steinmann, Pierre A.; Spalvins, Talivaldis

1990-01-01

By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.

Zinc Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

2017-09-01

Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

Hybrid SnO2/TiO2 Nanocomposites for Selective Detection of Ultra-Low Hydrogen Sulfide Concentrations in Complex Backgrounds

PubMed Central

Larin, Alexander; Womble, Phillip C.; Dobrokhotov, Vladimir

2016-01-01

In this paper, we present a chemiresistive metal oxide (MOX) sensor for detection of hydrogen sulfide. Compared to the previous reports, the overall sensor performance was improved in multiple characteristics, including: sensitivity, selectivity, stability, activation time, response time, recovery time, and activation temperature. The superior sensor performance was attributed to the utilization of hybrid SnO2/TiO2 oxides as interactive catalytic layers deposited using a magnetron radio frequency (RF) sputtering technique. The unique advantage of the RF sputtering for sensor fabrication is the ability to create ultra-thin films with precise control of geometry, morphology and chemical composition of the product of synthesis. Chemiresistive films down to several nanometers can be fabricated as sensing elements. The RF sputtering technique was found to be very robust for bilayer and multilayer oxide structure fabrication. The geometry, morphology, chemical composition and electronic structure of interactive layers were evaluated in relation to their gas sensing performance, using scanning electron microscopy (SEM), X-ray diffraction technique (XRD), atomic force microscopy (AFM), Energy Dispersive X-ray Spectroscopy (EDAX), UV visible spectroscopy, and Kelvin probe measurements. A sensor based on multilayer SnO2/TiO2 catalytic layer with 10% vol. content of TiO2 demonstrated the best gas sensing performance in all characteristics. Based on the pattern relating material’s characteristics to gas sensing performance, the optimization strategy for hydrogen sulfide sensor fabrication was suggested. PMID:27618900

Highly sensitive H2 gas sensor of Co doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Bhati, Vijendra Singh; Ranwa, Sapana; Kumar, Mahesh

2018-04-01

In this report, the hydrogen gas sensing properties based on Co doped ZnO nanostructures are explored. The undoped and Co doped nanostructures were grown by RF magnetron sputtering system, and its structural, morphological, and hydrogen sensing behavior are investigated. The maximum relative response was occurred by the 2.5% Co doped ZnO nanostructures among undoped and other doped sensors. The enhancement of relative response might be due to large chemisorbed sites formation on the ZnO surface for the reaction to hydrogen gas.

Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb:SrTiO3 heterojunction

NASA Astrophysics Data System (ADS)

Ren, Yong; Li, Jiachen; Zhang, Weifeng; Jia, Caihong

2017-10-01

Epitaxial ZnO thin films were grown on SrTiO3:Nb (NSTO) substrates by rf magnetron sputtering method. The multi-level resistance states were observed by applying different amplitudes and/or polarities of voltage pulses, which is supposed to be related to the drift of oxygen vacancies. Furthermore, the decay of retention is also corresponding to the migration of oxygen vacancies. The retention and cycle stability implies that the ZnO/Nb:SrTiO3 heterojunctions are promising for high density memory application.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

The characteristics of a new negative metal ion beam source and its applications

NASA Astrophysics Data System (ADS)

Paik, Namwoong

2001-10-01

Numerous efforts at energetic thin film deposition processes using ion beams have been made to meet the demands of today's thin film industry. As one of these efforts, a new Magnetron Sputter Negative Ion Source (MSNIS) was developed. In this study, the development and the characterization of the MSNIS were investigated. Amorphous carbon films were used as a sample coating medium to evaluate the ion beam energy effect. A review of energetic Physical Vapor Deposition (PVD) techniques is presented in Chapter 1. The energetic PVD methods can be classified into two major categories: the indirect ion beam method Ion Beam Assisted Deposition (IBAD), and the direct ion beam method-Direct Ion Beam Deposition (DIBD). In this chapter, currently available DIBD processes such as Cathodic Arc, Laser Ablation, Ionized Physical Vapor Deposition (I-PVD) and Magnetron Sputter Negative Ion Source (MSNIS) are individually reviewed. The design and construction of the MSNIS is presented in chapter 2. The MSNIS is a hybrid of the conventional magnetron sputter configuration and the cesium surface ionizer. The negative sputtered ions are produced directly from the sputter target by surface ionization. In chapter 3, the ion beam and plasma characteristics of an 8″ diameter MSNIS are investigated using a retarding field analyzer and a cylindrical Langmuir Probe. The measured electron temperature is approximately 2-5 eV, while the plasma density and plasma potential were of the order of 10 11-1012 cm3 and 5-20 V, respectively, depending on the pressure and power. In chapter 4, in order to evaluate the effect of the ion beam on the resultant films, amorphous carbon films were deposited under various conditions. The structure of carbon films was investigated using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The result suggests the fraction of spa bonding is more than 70% in some samples prepared by MSNIS while magnetron sputtered samples showed less than 30%. (Abstract shortened by UMI.)

MnO2 ultrathin films deposited by means of magnetron sputtering: Relationships between process conditions, structural properties and performance in transparent supercapacitors

NASA Astrophysics Data System (ADS)

Borysiewicz, Michał A.; Wzorek, Marek; Myśliwiec, Marcin; Kaczmarski, Jakub; Ekielski, Marek

2016-12-01

This study focuses on the relationships between the process parameters during magnetron sputter deposition of MnO2 and the resulting film properties. Three MnO2 phases were identified - γ, β and λ and the dependence of MnO2 phase presence on the oxygen content in the sputtering atmosphere was found. Selected MnO2 phases were subsequently applied as ultrathin coatings on top of nanostructured ZnO electrodes for transparent supercapacitors with LiCl-based gel electrolyte. The films containing λ-MnO2 exhibited both the highest optical transparency of 62% at 550 nm as well as the highest specific capacitance in the supercapacitor structure, equal to 73.1 μF/cm2. Initially lower, the capacitance was elevated by charge-discharge conditioning.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

NASA Astrophysics Data System (ADS)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Optical and electrical responses of magnetron-sputtered amorphous Nb-doped TiO2 thin films annealed at low temperature

NASA Astrophysics Data System (ADS)

Quynh, Luu Manh; Tien, Nguyen Thi; Thanh, Pham Van; Hieu, Nguyen Minh; Doanh, Sai Cong; Thuat, Nguyen Tran; Tuyen, Nguyen Viet; Luong, Nguyen Hoang; Hoang, Ngoc Lam Huong

2018-03-01

Nb-doped TiO2 (TNO) thin films were prepared by annealing at 300 °C for 30 min after a magnetron-sputter process. A laser-irradiated post-annealing Raman scattering analysis indirectly showed the possible formation of small size anatase TNO clusters within the thin film matrix Although the TNO thin films were not crystallized, oxygen vacancies were created by adding H2 into the sputter gas during the deposition process. This improved the conductivity and carrier concentration of the thin films. As the ratio of H2 in sputter gas is f(H2) = [H2/Ar+H2] = 10%, the carrier concentration of the amorphous TNO thin film reached 1022 (cm-3) with the resistivity being about 10-2 (Ω.cm). Even though a new methodology to decrease the fabrication temperature is not presented; this study demonstrates an efficient approach to shorten the annealing process, which ends prior to the crystallization of the thin films. Besides, in situ H2 addition into the sputter atmosphere is proven to be a good solution to enhance the electrical conductivity of semiconductor thin films like TNOs, despite the fact that they are not well crystallized.

Investigation of Influence of Gas Ratio on the Electron Temperature in TiN Magnetron Sputtering Deposition System

DTIC Science & Technology

2013-07-01

31st ICPIG, July 14-19, 2013, Granada , Spain Investigation of Influence of Gas Ratio on the Electron Temperature in TiN Magnetron Sputtering...ICPIG) Held in Granada , Spain on 14-19 July 2013 14. ABSTRACT In this work, a nanolayer of titanium nitride which produced by the magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Highland, M. J.; Hruszkewycz, S. O.; Fong, D. D.

We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramidmore » is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.« less

Reactive high power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

2012-10-01

Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content.more » The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.« less

Investigation of ionized metal flux in enhanced high power impulse magnetron sputtering discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav, E-mail: stranak@prf.jcu.cz; Hubicka, Zdenek; Cada, Martin

2014-04-21

The metal ionized flux fraction and production of double charged metal ions Me{sup 2+} of different materials (Al, Cu, Fe, Ti) by High Power Impulse Magnetron Sputtering (HiPIMS) operated with and without a pre-ionization assistance is compared in the paper. The Electron Cyclotron Wave Resonance (ECWR) discharge was employed as the pre-ionization agent providing a seed of charge in the idle time of HiPIMS pulses. A modified grid-free biased quartz crystal microbalance was used to estimate the metal ionized flux fraction ξ. The energy-resolved mass spectrometry served as a complementary method to distinguish particular ion contributions to the total ionizedmore » flux onto the substrate. The ratio between densities of doubly Me{sup 2+} and singly Me{sup +} charged metal ions was determined. It is shown that ECWR assistance enhances Me{sup 2+} production with respect of absorbed rf-power. The ECWR discharge also increases the metal ionized flux fraction of about 30% especially in the region of lower pressures. Further, the suppression of the gas rarefaction effect due to enhanced secondary electron emission of Me{sup 2+} was observed.« less

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Yong Seob; Kim, Eungkwon; Hong, Byungyou

2013-12-15

Graphical abstract: The effect of O{sub 2} plasma treatment on the surface and the work function of ITO films. - Highlights: • ITO films were prepared on the glass substrate by RF magnetron sputtering method. • Effects of O{sub 2} plasma treatment on the properties of ITO films were investigated. • The work function of ITO film was changed from 4.67 to 5.66 eV by plasma treatment. - Abstract: The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O{submore » 2} plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.« less

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Peng, Ying; Miao, Lei; Li, Chao; Huang, Rong; Urushihara, Daisuke; Asaka, Toru; Nakatsuka, Osamu; Tanemura, Sakae

2018-01-01

The use of nanostructured thermoelectric materials that can effectively reduce the lattice conductivity with minimal effects on electrical properties has been recognized as the most successful approach to decoupling three key parameters (S, σ, and κ) and reaching high a dimensionless figure of merit (ZT) values. Here, five-period multilayer films consisting of 10 nm B-doped Si, 1.1 nm B, and 13 nm B-doped Ge layers in each period were prepared on Si wafer substrates using a magnetron sputtering system. Nanocrystallites of 22 nm diameter were formed by post-annealing at 800 °C in a short time. The nanostructures were confirmed by X-ray diffraction analysis, Raman spectroscopy, and transmission electron microscopy. The maximum Seebeck coefficient of Si/Ge films is significantly increased to 850 µV/K at 200 °C with their electrical resistivity decreased to 1.3 × 10-5 Ω·m, and the maximum power factor increased to 5.6 × 10-2 W·m-1·K-2. The improved thermoelectric properties of Si/Ge nanostructured films are possibly attributable to the synergistic effects of interface scattering, interface barrier, and quantum dot localization.

Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Dhanunjaya, M.; Khan, S. A.; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2017-12-01

We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of HfO2 nanoparticles (NPs) within the HfO2 thin-films deposited by radio frequency (RF) magnetron sputtering technique. As grown films consisted of amorphous clusters of non-spherical HfO2 NPs. These amorphous clusters are transformed to crystalline grains under 100 MeV Ag ion irradiation. These crystallites are found to be spherical in shape and are well dispersed within the films. The average size of these crystallites is found to increase with fluence. Pristine and irradiated films have been characterized by high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), grazing incident x-ray diffraction (GIXRD) and photo luminescence (PL) measurements. The PL measurements suggested the existence of different types of oxygen related defects in pristine and irradiated samples. The observed results on crystallization and grain growth under the influence of SHI are explained within the framework of thermal spike model. The results are expected to provide useful information for understanding the electronic excitation induced crystallization of nanoparticles and can lead to useful applications in electronic and photonic devices.

Method and apparatus for improved high power impulse magnetron sputtering

DOEpatents

Anders, Andre

2013-11-05

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

RF Sputtering for preparing substantially pure amorphous silicon monohydride

DOEpatents

Jeffrey, Frank R.; Shanks, Howard R.

1982-10-12

A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

RF Priming Experiments and Simulations of Magnetic Priming in Relativistic Magnetrons

NASA Astrophysics Data System (ADS)

White, W. M.; Gilgenbach, R. M.; Jones, M. C.; Neculaes, V. B.; Lau, Y. Y.; Jordan, N.; Pengvanich, P.; Edgar, R.; Hoff, B.; Spencer, T. A.; Price, D.

2004-11-01

We investigate 2 priming techniques in relativistic magnetrons for rapid startup and mode-locking: RF priming experiments with 0.1-1 MW from a 2nd magnetron; Magnetic-priming simulations by azimuthally-varying-axial magnetic field. Experiments utilize MELBA-C with a Titan 6-vane magnetron: V = -300kV, I = 1-10kA, e-beam T = 0.5 μs, microwave power = 100-500 MW, f= 1-1.3 GHz, base vacuum= 8.5 x 10-10 Torr. The AFRL RF priming magnetron is at 0.1-2 MW, 3 μsec, 1.27-1.32 GHz. About 0.2-0.3 MW is injected into 1 of 3 open coupling slots in the relativistic magnetron. Analysis of the relativistic magnetron's microwave output shows a clear effect of RF priming. Simulations of magnetic priming in the pi-mode are run in MAGIC code by imposing N/2 azimuthal-variations in the axial magnetic field of an N-vane magnetron. Faster startup and mode-locking are simulated by rapid-electron spoke formation and excitation of RF fields.

SERS spectra of pyridine adsorbed on nickel film prepared by magnetron sputtering

NASA Astrophysics Data System (ADS)

Li, Daoyong; Ouyang, Yu; Chen, Li; Cao, Weiran; Shi, Shaohua

2011-02-01

As a repeating well and cheaper enhancement substrate, the nickel film was fabricated with magnetron sputtering coating instrument. Surface enhanced Raman spectra (SERS) of pyridine adsorbed on this nickel film are compared with the experimental values of gaseous pyridine, the theoretical value of pyridine solution listed in other literatures and our method is better than electro-chemical etching electrode method for large scale preparation. The enhancement factor of the nickel film is calculated and the result indicates that magnetron sputtering coating technology is feasible for obtaining good SERS active surface.

RF priming of a long pulse relativistic magnetron

NASA Astrophysics Data System (ADS)

White, William Michael

Rapid startup, increased pulsewidth and mode locking of magnetrons have been demonstrated experimentally on a relativistic magnetron by radio frequency (RF) priming. Experiments utilize a -300 kV, 2-8 kA, 300-500 ns electron beam to drive a Titan 6-vane relativistic magnetron (˜100 MW output power). The RF priming source is a 100 kW pulsed magnetron operating at 1.27-1.32 GHz. Tuning stubs were utilized in the Titan structure to adjust the operating frequency of the relativistic magnetron pi-mode upward by 30%. The tuning was guided by simulation in the MAGIC 3D code and experimental cold tests including a mapping of the azimuthal electric field inside the relativistic magnetron structure. The most successful tuning geometry was that of a standard anode resonant structure, but RF priming experiments were performed on a rising-sun structure as well. The Time Frequency Analysis (TFA) program was used to directly observe the effects of RF priming on the relativistic magnetron. RF priming was successful in decreasing mode competition by suppressing the generation of the 2pi/3-mode power by 41%. RF priming experiments were also successful in increasing microwave pulsewidth by 12% and decreasing microwave output delay by 22%. These improvements were observed while operating in a priming regime not satisfying Adler's Relation. Overall, the improvements made to the performance of the relativistic magnetron were modest because of the low priming power available (50-250 kW).

Effects on crystal structure of CZTS thin films owing to deionized water and sulfurization treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nadi, Samia Ahmed; Chelvanathan, Puvaneswaran; Islam, M. A.

2015-05-15

To condense the cost and increase the production, using abundantly obtainable non-toxic elements, Cu{sub 2}ZnSnS{sub 4} (CZTS) seem to be a strong contender among the photovoltaic thin film technologies. Cu{sub 2}ZnSnS{sub 4} thin films were fabricated by RF magnetron sputtering system. CZTS were sputtered on Molybdenum (Mo) coated soda lime glass (SLG) using a single target sputtering technique. The sputtering parameters (base pressure, working pressure, Argon (Ar) flow rate, RF power and sputtering time) were kept same for all three types of films. For sulfurization, the temperature used was 500 °C. Finally, As-deposited film was immersed in DIW before undergoingmore » identical sulfurization profile. As-deposited film (Sample A), sulfurized films (Sample B) and sulfurized plus DIW treated (Sample C) were compared in terms of their structural properties by means of X-Ray Diffraction (XRD) measurement and Atomic Force Microscopy (AFM). Sample B and C showed peak of (1 1 2) planes of CZTS which are characteristics of stannite structure. Post deposition treatment on CZTS films proved to be beneficial as evident from the observed enhancement in the crystallinity and grain growth. Significant difference on grain size and area roughness could be observed from the AFM measurement. The roughness of Sample A, B and C increased from 5.007 nm to 20.509 nm and 14.183 nm accordingly. From XRD data secondary phases of Cu{sub x}MoS{sub x} could be observed.« less

Ion mass spectrometry investigations of the discharge during reactive high power pulsed and direct current magnetron sputtering of carbon in Ar and Ar/N{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, S.; Greczynski, G.; Jensen, J.

2012-07-01

Ion mass spectrometry was used to investigate discharges formed during high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a graphite target in Ar and Ar/N{sub 2} ambient. Ion energy distribution functions (IEDFs) were recorded in time-averaged and time-resolved mode for Ar{sup +}, C{sup +}, N{sub 2}{sup +}, N{sup +}, and C{sub x}N{sub y}{sup +} ions. An increase of N{sub 2} in the sputter gas (keeping the deposition pressure, pulse width, pulse frequency, and pulse energy constant) results for the HiPIMS discharge in a significant increase in C{sup +}, N{sup +}, and CN{sup +} ion energies.more » Ar{sup +}, N{sub 2}{sup +}, and C{sub 2}N{sup +} ion energies, in turn, did not considerably vary with the changes in working gas composition. The HiPIMS process showed higher ion energies and fluxes, particularly for C{sup +} ions, compared to DCMS. The time evolution of the plasma species was analyzed for HiPIMS and revealed the sequential arrival of working gas ions, ions ejected from the target, and later during the pulse-on time molecular ions, in particular CN{sup +} and C{sub 2}N{sup +}. The formation of fullerene-like structured CN{sub x} thin films for both modes of magnetron sputtering is explained by ion mass-spectrometry results and demonstrated by transmission electron microscopy as well as diffraction.« less

Grain boundary diffusion of Dy films prepared by magnetron sputtering for sintered Nd–Fe–B magnets

NASA Astrophysics Data System (ADS)

Chen, W.; Luo, J. M.; Guan, Y. W.; Huang, Y. L.; Chen, M.; Hou, Y. H.

2018-05-01

Dy films, deposited on the surface of sintered Nd–Fe–B magnets by magnetron sputtering, were employed for grain boundary diffusion source. High coercivity sintered Nd–Fe–B magnets were successfully prepared. Effects of sputtering power and grain boundary diffusion processes (GBDP) on the microstructure and magnetic properties were investigated in detail. The dense and uniform Dy films were beneficial to prepare high coercivity magnets by GBDP. The maximum coercivity value of 1189 kA m‑1 could be shown, which was an amplification of 22.3%, compared with that of as-prepared Nd–Fe–B magnet. Furthermore, the improved remanence and maximum energy product were also achieved through tuning grain boundary diffusion processes. Our results demonstrated that the formation of (Nd, Dy)2Fe14B shell surrounding Nd2Fe14B grains and fine, uniform and continuous intergranular RE-rich phases jointly contribute to the improved coercivity.

Anomalous effects in the aluminum oxide sputtering yield

NASA Astrophysics Data System (ADS)

Schelfhout, R.; Strijckmans, K.; Depla, D.

2018-04-01

The sputtering yield of aluminum oxide during reactive magnetron sputtering has been quantified by a new and fast method. The method is based on the meticulous determination of the reactive gas consumption during reactive DC magnetron sputtering and has been deployed to determine the sputtering yield of aluminum oxide. The accuracy of the proposed method is demonstrated by comparing its results to the common weight loss method excluding secondary effects such as redeposition. Both methods exhibit a decrease in sputtering yield with increasing discharge current. This feature of the aluminum oxide sputtering yield is described for the first time. It resembles the discrepancy between published high sputtering yield values determined by low current ion beams and the low deposition rate in the poisoned mode during reactive magnetron sputtering. Moreover, the usefulness of the new method arises from its time-resolved capabilities. The evolution of the alumina sputtering yield can now be measured up to a resolution of seconds. This reveals the complex dynamical behavior of the sputtering yield. A plausible explanation of the observed anomalies seems to originate from the balance between retention and out-diffusion of implanted gas atoms, while other possible causes are commented.

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Decorative black TiCxOy film fabricated by DC magnetron sputtering without importing oxygen reactive gas

NASA Astrophysics Data System (ADS)

Ono, Katsushi; Wakabayashi, Masao; Tsukakoshi, Yukio; Abe, Yoshiyuki

2016-02-01

Decorative black TiCxOy films were fabricated by dc (direct current) magnetron sputtering without importing the oxygen reactive gas into the sputtering chamber. Using a ceramic target of titanium oxycarbide (TiC1.59O0.31), the oxygen content in the films could be easily controlled by adjustment of total sputtering gas pressure without remarkable change of the carbon content. The films deposited at 2.0 and 4.0 Pa, those are higher pressure when compared with that in conventional magnetron sputtering, showed an attractive black color. In particular, the film at 4.0 Pa had the composition of TiC1.03O1.10, exhibited the L* of 41.5, a* of 0.2 and b* of 0.6 in CIELAB color space. These values were smaller than those in the TiC0.29O1.38 films (L* of 45.8, a* of 1.2 and b* of 1.2) fabricated by conventional reactive sputtering method from the same target under the conditions of gas pressure of 0.3 Pa and optimized oxygen reactive gas concentration of 2.5 vol.% in sputtering gas. Analysis of XRD and XPS revealed that the black film deposited at 4.0 Pa was the amorphous film composed of TiC, TiO and C. The adhesion property and the heat resisting property were enough for decorative uses. This sputtering process has an industrial advantage that the decorative black coating with color uniformity in large area can be easily obtained by plain operation because of unnecessary of the oxygen reactive gas importing which is difficult to be controlled uniformly in the sputtering chamber.

Semiconducting boron carbide thin films: Structure, processing, and diode applications

NASA Astrophysics Data System (ADS)

Bao, Ruqiang

The high energy density and long lifetime of betavoltaic devices make them very useful to provide the power for applications ranging from implantable cardiac pacemakers to deep space satellites and remote sensors. However, when made with conventional semiconductors, betavoltaic devices tend to suffer rapid degradation as a result of radiation damage. It has been suggested that the degradation problem could potentially be alleviated by replacing conventional semiconductors with a radiation hard semiconducting material like icosahedral boron carbide. The goal of my dissertation was to better understand the fundamental properties and structure of boron carbide thin films and to explore the processes to fabricate boron carbide based devices for voltaic applications. A pulsed laser deposition system and a radio frequency (RF) magnetron sputtering deposition system were designed and built to achieve the goals. After comparing the experimental results obtained using these two techniques, it was concluded that RF magnetron sputtering deposition technique is a good method to make B4C boron carbide thin films to fabricate repeatable and reproducible voltaic devices. The B4C thin films deposited by RF magnetron sputtering require in situ dry pre-cleaning to make ohmic contacts for B4C thin films to fabricate the devices. By adding another RF sputtering to pre-clean the substrate and thin films, a process to fabricate B4C / n-Si heterojunctions has been established. In addition, a low energy electron accelerator (LEEA) was built to mimic beta particles emitted from Pm147 and used to characterize the betavoltaic performance of betavoltaic devices as a function of beta energy and beta flux as well as do accelerated lifetime testing for betavoltaic devices. The energy range of LEEA is 20 - 250 keV with the current from several nA to 50 muA. High efficiency Si solar cells were used to demonstrate the powerful capabilities of LEEA, i.e., the characterization of betavoltaic performance and the accelerated lifetime test of betavoltaic devices. Structural analysis by X-ray diffraction and high resolution transmission electron microscopy showed that the prepared B4C thin films are amorphous. The presence of icosahedrons, which account for the radiation hardness of icosahedral boron rich solids, in the amorphous B4C thin films was supported by Fourier transform infrared spectroscopy. The pair distribution functions derived from selected area diffraction pattern of amorphous B 4C thin films showed that the short range order structure of amorphous B4C thin films is similar to beta-rhombohedral boron but with a shorter distance. The investigation of electrical properties of B4 C thin films showed that the resistivity of B4C thin films ranges from 695 O-cm to 9650 O-cm depending on the deposition temperature; the direct and indirect bandgaps for B4C thin films are 2.776 - 2.898 eV and 1.148 - 1.327 eV, respectively; the effective lifetime of excess charge carrier is close to 0.1 ms for B4C thin film deposited at room temperature and approximates to 1 ms for those deposited at 175 °C to 500 °C. Based on structural characterization and electrical properties of B4C thin films, a structural model of B4C thin films was proposed and supported by nanoindenter experiments, i.e., the hardness of thin films deposited at temperature in the range of 275 °C to 350 °C is lower than that of the films deposited at RT and 650 °C. Heterojunctions of B4C / n-Si (100) possessing photovoltaic response have been fabricated. The suitable deposition temperature for B 4C thin film to fabricate photovoltaic device is from 175 °C to 350 °C. When the Si substrate surface was not pre-cleaned before depositing B4C thin film, the B4C / n-Si (100) heterojunction has better photovoltaic responses, presumably because there were no sputter-produced defects on the surface of Si (100) substrate. Until now, the best achievable photovoltaic performance is B4C / n-Si (100) heterojunction with 200 nm thick B4C thin film when the Si (100) substrate surface was not pre-cleaned by RF sputtering. When this heterojunction was characterized using solar simulator with air mass 1.5 spectra, the short circuit current density is 1.484 mA/cm2, the open circuit voltage is about 0.389 V, and the power conversion efficiency is about 0.214 %. In addition, B5C thin films deposited by plasma enhanced chemical vapor deposition were used to make some of the devices studied in this dissertation. It was found that the Si-doped BC / n-Si (111) heterojunctions also demonstrates their photovoltaic and betavoltaic responses. Even after irradiated by a 120 keV electron beam to a fluence of 4.38x1017 electrons/cm 2, the heterojunctions still posses betavoltaic behavior and their responses to the incident irradiance density are similar to that before irradiation.

Comparative study of structural, optical and impedance measurements on V{sub 2}O{sub 5} and V-Ce mixed oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malini, D. Rachel; Sanjeeviraja, C., E-mail: sanjeeviraja@rediffmail.com

Vanadium pentoxide (V{sub 2}O{sub 5}) and Vanadium-Cerium mixed oxide thin films at different molar ratios of V{sub 2}O{sub 5} and CeO{sub 2} have been deposited at 200 W rf power by rf planar magnetron sputtering in pure argon atmosphere. The structural and optical properties were studied by taking X-ray diffraction and transmittance and absorption spectra respectively. The amorphous thin films show an increase in transmittance and optical bandgap with increase in CeO{sub 2} content in as-prepared thin films. The impedance measurements for as-deposited thin films show an increase in electrical conductivity with increase in CeO{sub 2} material.

Magnetron-Sputtered Amorphous Metallic Coatings

NASA Technical Reports Server (NTRS)

Thakoor, A. P.; Mehra, M.; Khanna, S. K.

1985-01-01

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Deposition and characterization of magnetron sputtered bcc tantalum

NASA Astrophysics Data System (ADS)

Patel, Anamika

The goal of this thesis was to provide scientific and technical research results for developing and characterizing tantalum (Ta) coatings on steel substrates deposited by DC magnetron sputtering. Deposition of tantalum on steel is of special interest for the protection it offers to surfaces, e.g. the surfaces of gun barrels against the erosive wear of hot propellant gases and the mechanical damage caused by the motion of launching projectiles. Electro-plated chromium is presently most commonly used for this purpose; however, it is considered to be carcinogenic in its hexavalent form. Tantalum is being investigated as non-toxic alternative to chromium and also because of its superior protective properties in these extreme environments. DC magnetron sputtering was chosen for this investigation of tantalum coatings on steel substrates because it is a versatile industrial proven process for deposition of metals. Sputter deposited Ta films can have two crystallographic structures: (1) body center cubic (bcc) phase, characterized by high toughness and high ductility and (2) a tetragonal beta phase characterized by brittleness and a tendency to fail under stress. It was found in this work that the bcc Ta coatings on steel can be obtained reliably by either of two methods: (1) depositing Ta on a submicron, stoichiometric TaN seed layer reactively sputtered on unheated steel and (2) depositing Ta directly on steel heated above a critical temperature. For argon sputtering gas this critical temperature was found to be 400°C at a pressure of 5 mtorr. With the heavier krypton gas, this critical temperature is reduced to 350°C. X-ray diffraction (XRD) was used to investigate the structure of tantalum and nitride films, and the composition of the nitride films was measured by nuclear reaction analyses (NRA), which were used to study in detail the enhancement of the bcc phase of Ta on steel. The scratch adhesion tests performed with a diamond hemispherical tip of radius 200 mum under increasing loads revealed high critical load values for failure (>15 N) for the bcc coatings versus the low load values (<9 N) for the beta coatings. The coating deposited on TaN interlayers on sputter-etched steel had better adhesion than those on steel surface without sputter etching. The results for this work have demonstrated that by controlling the various process parameters of do magnetron sputtering, high quality bcc Ta coatings of multi-micron thickness with excellent adhesion to steel can be made. An important contribution of this dissertation is in the enhancing an understanding of this process. The impact of this research will be in a number of fields where superior protective castings are needed. These include military applications, electronic components, chemical processing, and others.

Structural and spectroscopic analysis of ex-situ annealed RF sputtered aluminium doped zinc oxide thin films

NASA Astrophysics Data System (ADS)

Otieno, Francis; Airo, Mildred; Erasmus, Rudolph M.; Billing, David G.; Quandt, Alexander; Wamwangi, Daniel

2017-08-01

Aluminium doped zinc oxide thin films are prepared by Radio Frequency magnetron sputtering in pure argon atmosphere at 100 W. The structural results reveal good film adhesion on a silicon substrate (001). The thin films were then subjected to heat treatment in a furnace under ambient air. The structural, morphological, and optical properties of the thin films as a function of deposition time and annealing temperatures have been investigated using Grazing incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy, and Scanning Electronic Microscopy. The photoluminescence properties of the annealed films showed significant changes in the optical properties attributed to mid gap defects. Annealing increases the crystallite size and the roughness of the film. The crystallinity of the films also improved as evident from the Raman and XRD studies.

DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS.

DOE Office of Scientific and Technical Information (OSTI.GOV)

HE,P.; HSEUH,H.C.; MAPES,M.

2001-06-18

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with {approximately}100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent resultsmore » were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented.« less

Mechanical properties, chemical analysis and evaluation of antimicrobial response of Si-DLC coatings fabricated on AISI 316 LVM substrate by a multi-target DC-RF magnetron sputtering method for potential biomedical applications

NASA Astrophysics Data System (ADS)

Bociaga, Dorota; Sobczyk-Guzenda, Anna; Szymanski, Witold; Jedrzejczak, Anna; Jastrzebska, Aleksandra; Olejnik, Anna; Jastrzebski, Krzysztof

2017-09-01

In this study silicon doped diamond-like carbon (Si-DLC) coatings were synthesized on two substrates: silicon and AISI 316LVM stainless steel using a multi-target DC-RF magnetron sputtering method. The Si content in the films ranged between 4 and 16 at.%, and was controlled by the electrical power applied in RF regime to Si cathode target. The character of the chemical bonds was revealed by FTIR analysis. With the addition of silicon the hydroxyl absorption (band in the range of 3200-3600 cm-1) increased what suggests more hydrophilic character of the coating. There were also observed significant changes in bonding of Si atoms. For low content of dopant, Si-O-Si bond system is predominant, while for the highest content of silicon there is an evidence of the shift to Si-C bonds in close proximity to methyl groups. The Raman spectroscopy revealed that the G peak position is shifted to a lower wavenumber and the ID/IG ratio decreased with increasing Si content, which indicates an increase in the C-sp3 content. Regardless of the coatings' composition, the improvement of hardness in comparison to pure substrate material (AISI 316 LVM) was observed. Although the reduction of the level of hardness from the level of 10.8 GPa for pure DLC to about 9.4 GPa for the silicon doped coatings was observed, the concomitant improvement of films adhesion with higher amount of Si was revealed. Although incorporation of the dopant to DLC coatings increases the number of E. coli cells which adhered to the examined surfaces, the microbial colonisation remains on the level of substrate material. The presented results prove the potential of Si-DLC coatings in biomedical applications from the point of view of their mechanical properties.

Microstructure Evolution and Composition Control during the Processing of Thin-gage Metallic Foil (Preprint)

DTIC Science & Technology

2012-02-01

the presence of somewhat randomly-distributed carbides and borides (white particles in BSE images), this grain size was comparable to that observed...pinned by carbide/ boride particles (imaging white in Figure 8c). The very fine gamma-prime precipitates likely produced during magnetron sputtering...sputtered material. First, the carbide/ boride particles were nucleated and hence located preferentially at the grain boundaries in the sputtered

In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In 2O 3 Epitaxial Films

DOE PAGES

Highland, M. J.; Hruszkewycz, S. O.; Fong, D. D.; ...

2017-10-16

Here, we report on the synthesis, stability, and local structure of In 2O 3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In 2O 3 deposited onto (001)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski–Krastanov growth mode at a temperature of 850°C, resulting in epitaxial, truncated square pyramids with (111) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In 2O 3 from the magnetron source. Lastly, we also find that the internal lattice structure of onemore » such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In 2O 3 nanostructures and films.« less

Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfiadi, H., E-mail: yudi@fi.itb.ac.id; Aji, A. S., E-mail: yudi@fi.itb.ac.id; Darma, Y., E-mail: yudi@fi.itb.ac.id

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX,more » XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.« less

Enhanced giant magnetoimpedance in heterogeneous nanobrush

PubMed Central

2012-01-01

A highly sensitive and large working range giant magnetoimpedance (GMI) effect is found in the novel nanostructure: nanobrush. The nanostructure is composed of a soft magnetic nanofilm and a nanowire array, respectively fabricated by RF magnetron sputtering and electrochemical deposition. The optimal GMI ratio of nanobrush is promoted to more than 250%, higher than the pure FeNi film and some sandwich structures at low frequency. The design of this structure is based on the vortex distribution of magnetic moments in thin film, and it can be induced by the exchange coupling effect between the interfaces of nanobrush. PMID:22963551

Ionic displacement induced ferroelectricity in multiferroic Cr doped ZnO

NASA Astrophysics Data System (ADS)

Tiwari, Jeetendra Kumar; Ali, Nasir; Ghosh, Subhasis

2018-05-01

Cr doped ZnO thin film was grown on quartz substrate using RF magnetron sputtering. Room temperature magnetic and ferroelectric properties of Cr doped ZnO were investigated. It is shown that ZnO becomes ferromagnetic upon Cr doping. It is considered that breaking of centrosymmetry due strain developed by doping of Cr should be responsible for the ferroelectricity. These films were characterized by X-ray diffraction (XRD), which shows that the films possess crystalline structure with preferred orientation along the (002) crystal plane and there is no extra peak due to Cr i.e. single phase.

Hybrid Calcium Phosphate Coatings for Titanium Implants

NASA Astrophysics Data System (ADS)

Kharapudchenko, E.; Ignatov, V.; Ivanov, V.; Tverdokhlebov, S.

2017-01-01

Hybrid multilayer coatings were obtained on titanium substrates by the combination of two methods: the micro-arc oxidation in phosphoric acid solution with the addition of calcium compounds to high supersaturated state and RF magnetron sputtering of the target made of synthetic hydroxyapatite. 16 different groups of coatings were formed on titanium substrates and in vitro studies were conducted in accordance with ISO 23317 in the solution simulating body fluid. The studies using SEM, XRD of the coatings of the samples before and after exposure to SBF were performed. The features of morphology, chemical and phase composition of the studied coatings are shown.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

DOEpatents

Jeffery, F.R.; Shanks, H.R.

1980-08-26

A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

In-situ sputtering apparatus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.

A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and amore » cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.« less

Experimental study on TiN coated racetrack-type ceramic pipe

NASA Astrophysics Data System (ADS)

Wang, Jie; Xu, Yan-Hui; Zhang, Bo; Wei, Wei; Fan, Le; Pei, Xiang-Tao; Hong, Yuan-Zhi; Wang, Yong

2015-11-01

TiN film was coated on the internal surface of a racetrack-type ceramic pipe by three different methods: radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of TiN film under different coating methods were compared. The highest deposition rate was 156 nm/h, which was obtained by magnetron sputtering coating. Based on AFM, SEM and XPS test results, the properties of TiN film, such as film roughness and surface morphology, were analyzed. Furthermore, the deposition rates were studied with two different cathode types, Ti wires and Ti plate. According to the SEM test results, the deposition rate of TiN/Ti film was about 800 nm/h with Ti plate cathode by DC magnetron sputtering. Using Ti plate cathode rather than Ti wire cathode can greatly improve the film deposition rate. Supported by National Nature Science Foundation of China (11075157)

Optical plasma monitoring of Y-Ba-Cu-O rf sputter target transients

NASA Astrophysics Data System (ADS)

Klein, J. D.; Yen, A.

1989-12-01

The plasma emission spectra resulting from rf sputtering Y-Ba-Cu-O targets were observed as a function of sputter time. Although most lines of the observed spectra are not attributable to target species, peaks associated with each of the cation elements were resolved. The Ba and Cu peaks can be used as tracking indicators of process conditions. For example, switching from an O2/Ar sputter atmosphere to pure Ar enhanced the Ba peak much more than that associated with Cu. The emission spectra from a newly fabricated target exhibited a slow first-order transient response in seeking equilibrium with the rf plasma. The transient response of a previously sputtered target is also first order but has a much shorter time constant.

Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers

NASA Astrophysics Data System (ADS)

Mensur Alkoy, Ebru; Uchiyama, Kiyoshi; Shiosaki, Tadashi; Alkoy, Sedat

2006-05-01

Ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films with PbZrO3 (PZ) buffer layers were prepared on Pt(111)/Ti/SiO2/Si(100) substrates using a hybrid rf magnetron sputtering and sol-gel process. Texture of PZT films was found to depend on Pb content of PZ buffer layers. Buffered PZT films displayed comparable ferroelectric properties (2Pr=38-53 μC/cm2,2Ec=136-170 kV/cm) with unbuffered PZT. Asymmetric leakage current and fatigue behavior with superior fatigue resistance was observed in PZ buffered PZT compared to unbuffered films. PZ buffer layers were found to affect crystallization and texture of PZT, and act as a capacitive interface layer possibly blocking charge injection from electrodes.

Interface layer to tailor the texture and surface morphology of Al-doped ZnO polycrystalline films on glass substrates

NASA Astrophysics Data System (ADS)

Nomoto, Junichi; Inaba, Katsuhiko; Kobayashi, Shintaro; Makino, Hisao; Yamamoto, Tetsuya

2017-06-01

A 10-nm-thick radio frequency magnetron-sputtered aluminum-doped zinc oxide (AZO) showing a texture with a preferential (0001) orientation on amorphous glass substrates was used as an interface layer for tailoring the orientation of 490-nm-thick polycrystalline AZO films subsequently deposited by direct current (DC) magnetron sputtering at a substrate temperature of 200 °C. Wide-angle X-ray diffraction pole figure analysis showed that the resulting 500-nm-thick AZO films showed a texture with a highly preferential c-axis orientation. This showed that DC-magnetron-sputtered AZO films grew along with the orientation matching that of the interface layer, whereas 500-nm-thick AZO films deposited on bare glass substrates by DC magnetron sputtering exhibited a mixed orientation of the c-plane and other planes. The surface morphology was also improved while retaining the lateral grain size by applying the interface layer as revealed by atomic force microscopy.

Properties of RF sputtered cadmium telluride (CdTe) thin films: Influence of deposition pressure

NASA Astrophysics Data System (ADS)

Kulkarni, R. R.; Pawbake, A. S.; Waykar, R. G.; Rondiya, S. R.; Jadhavar, A. A.; Pandharkar, S. M.; Karpe, S. D.; Diwate, K. D.; Jadkar, S. R.

2016-04-01

Influence of deposition pressure on structural, morphology, electrical and optical properties of CdTe thin films deposited at low substrate temperature (100°C) by RF magnetron sputtering was investigated. The formation of CdTe was confirmed by low angle XRD and Raman spectroscopy. The low angle XRD analysis revealed that the CdTe films have zinc blende (cubic) structure with crystallites having preferred orientation in (111) direction. Raman spectra show the longitudinal optical (LO) phonon mode peak ˜ 165.4 cm-1 suggesting high quality CdTe film were obtained over the entire range of deposition pressure studied. Scanning electron microscopy analysis showed that films are smooth, homogenous, and crack-free with no evidence of voids. The EDAX data revealed that CdTe films deposited at low deposition pressure are high-quality stoichiometric. However, for all deposition pressures, films are rich in Cd relative to Te. The UV-Visible spectroscopy analysis show the blue shift in absorption edge with increasing the deposition pressure while the band gap show decreasing trend. The highest electrical conductivity was obtained for the film deposited at deposition pressure 1 Pa which indicates that the optimized deposition pressure for our sputtering unit is 1 Pa. Based on the experimental results, these CdTe films can be useful for the application in the flexible solar cells and other opto-electronic devices.

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

NASA Astrophysics Data System (ADS)

Falub, Claudiu V.; Rohrmann, Hartmut; Bless, Martin; Meduňa, Mojmír; Marioni, Miguel; Schneider, Daniel; Richter, Jan H.; Padrun, Marco

2017-05-01

Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8" Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100) nm thick magnetic layers and (2-20) nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ˜(7-120) Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency), while the coercivity was kept low, ˜(0.05-0.9) Oe. The alignment of the easy axis (EA) on the 8" wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM), X-ray reflectivity (XRR) with reciprocal space mapping (RSM) and magneto-optical Kerr effect (MOKE) measurements.

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

NASA Technical Reports Server (NTRS)

Coutts, T. J.

1987-01-01

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Continuous Sputter Deposition Coating of Long Monofilaments

DTIC Science & Technology

2014-04-01

sectional view of sample 1. Using SEM, the copper coated monofilament was observed to be smooth with little to no indications of flaking or cracked...monofilament. The magnetron sputter deposition (MSD) process was used to apply copper coatings on the order of 10–100 nanometers thick onto both nylon...of monofilaments. Though only copper coatings are discussed in this report, the system could also be used to apply a variety of sputtered metal or

Heavy particle transport in sputtering systems

NASA Astrophysics Data System (ADS)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Magnetron sputtering for the production of EUV mask blanks

NASA Astrophysics Data System (ADS)

Kearney, Patrick; Ngai, Tat; Karumuri, Anil; Yum, Jung; Lee, Hojune; Gilmer, David; Vo, Tuan; Goodwin, Frank

2015-03-01

Ion Beam Deposition (IBD) has been the primary technique used to deposit EUV mask blanks since 1995 when it was discovered it could produce multilayers with few defects. Since that time the IBD technique has been extensively studied and improved and is finally approaching usable defectivities. But in the intervening years, the defectivity of magnetron sputtering has been greatly improved. This paper evaluates the suitability of a modern magnetron tool to produce EUV mask blanks and the ability to support HVM production. In particular we show that the reflectivity and uniformity of these tools are superior to current generation IBD tools, and that the magnetron tools can produce EUV films with defect densities comparable to recent best IBD tool performance. Magnetron tools also offer many advantages in manufacturability and tool throughput; however, challenges remain, including transitioning the magnetron tools from the wafer to mask formats. While work continues on quantifying the capability of magnetron sputtering to meet the mask blank demands of the industry, for the most part the remaining challenges do not require any fundamental improvements to existing technology. Based on the recent results and the data presented in this paper there is a clear indication that magnetron deposition should be considered for the future of EUV mask blank production.

Sputtered silicon nitride coatings for wear protection

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1982-01-01

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Characteristic of the carbon-tungsten co-deposition layers prepared by RF magnetron sputtering in a D2/Ar plasma

NASA Astrophysics Data System (ADS)

Tang, X. H.; Zhang, W. Z.; Shi, L. Q.; Qi, Q.; Zhang, B.; Zhang, W. Y.; Wang, K.; Hu, J. S.

2013-06-01

A C-W co-deposition layer, formed by radio frequency magnetron sputtering, was investigated to identify the characteristics of C-W mixed layers in fusion experimental reactors. The layers were characterized by ion beam analysis, Raman spectroscopy, X-ray diffraction and scanning electron microscopy. It was found that D atoms in C-W layers were mainly trapped by the C atoms. The ratio of C/W and D concentrations in the C-W layers deposited at a pressure of 5.0 Pa and a fixed flow rate ratio were 54/31 and 5%, respectively. They all increased significantly with increased flow rate of D2 but decreased with temperature at a relatively low level. The pressure dependence of the D concentration showed a maximum value around 5 Pa and it decreased with rising or decreasing pressure. Both Raman and X-ray analysis revealed that the structure of the C-W layers became more graphite-like with increasing temperature. Moreover, deuterium introduction made the tungsten carbide phase disappear in the deuterated C-W layers. Only erosion caves on the surface of the sample prepared at 300 K were observed by SEM. When the temperature increased, they disappeared, and convex bodies appeared.

Checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) by RF magnetron sputtering on a stainless steel in all-solid-state thin film battery

NASA Astrophysics Data System (ADS)

Hsueh, T. H.; Yu, Y. Q.; Jan, D. J.; Su, C. H.; Chang, S. M.

2018-03-01

All-solid-state thin film lithium batteries (TFLBs) are the most competitive low-power sources to be applied in various kinds of micro-electro-mechanical systems and have been draw a lot of attention in academic research. In this paper, the checkerboard deposition of all-solid-state TFLB was composed of thin film lithium metal anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and checkerboard deposition of lithium manganese oxide spinel (LiMn2O4) cathode. The LiPON and LiMn2O4 were deposited by a radio frequency magnetron sputtering system, and the lithium metal was deposited by a thermal evaporation coater. The electrochemical characterization of this lithium battery showed the first discharge capacity of 107.8 μAh and the capacity retention was achieved 95.5% after 150 charge-discharge cycles between 4.3V and 3V at a current density of 11 μA/cm2 (0.5C). Obviously, the checkerboard of thin film increased the charge exchange rate; also this lithium battery exhibited high C-rate performance, with better capacity retention of 82% at 220 μA/cm2 (10C).

Optical constants, dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Sarkar, S.; Das, N. S.; Chattopadhyay, K. K.

2014-07-01

BiVO4 thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO4 target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO4 target material was prepared through solid-state reaction method by heating Bi2O3 and V2O5 mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV-Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO4 thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO4 thin films have been investigated in detail. Dielectric properties of the BiVO4 thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO4 thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO4.

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

NASA Astrophysics Data System (ADS)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Effect of V2O5 concentration on structural and optical properties of WO3 thin films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Gowthami, V.; Perumal, P.; Sanjeeviraja, C.

2014-10-01

Thin films of WO3 and V2O5 doped WO3 were coated on glass substrates using sputtering targets of diameter 50mm and thickness 5mm with RF power of 100 W and source to substrate distance of 60mm at room temperature for various V2O5 compositions (1, 2, 4, 6 and 10 %). XRD studies revealed that as deposited films were amorphous for all compositions. Morphological studies like Laser Raman and SEM too confirmed this amorphous nature of films. Refractive index (n) and the extinction coefficient (k) were calculated from the optical spectra such as transmittance and absorbance measured over the wavelength range of 200 to 2500nm. The films exhibited transmittance in the range of 80 to 90% in the UV-Vis-NIR region. Optical band gaps were calculated for both direct and indirect transitions. The optical parameters such as optical dispersion energies Eo and Ed, the average dielectric constant (ɛ), average values of the oscillator strength (So), wavelength of single oscillator (λo), and plasma frequency (ωp) were also calculated.

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Schifano, R.; Riise, H. N.; Domagala, J. Z.; Azarov, A. Yu.; Ratajczak, R.; Monakhov, E. V.; Venkatachalapathy, V.; Vines, L.; Chan, K. S.; Wong-Leung, J.; Svensson, B. G.

2017-01-01

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ˜3% and ˜12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ˜0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfaces.

Synergistic effect of indium and gallium co-doping on the properties of RF sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Shaheera, M.; Girija, K. G.; Kaur, Manmeet; Geetha, V.; Debnath, A. K.; Karri, Malvika; Thota, Manoj Kumar; Vatsa, R. K.; Muthe, K. P.; Gadkari, S. C.

2018-04-01

ZnO thin films were synthesized using RF magnetron sputtering, with simultaneous incorporation of Indium (In) and Gallium (Ga). The structural, optical, chemical composition and surface morphology of the pure and co-doped (IGZO) thin films were characterized by X-Ray diffraction (XRD), UV-visible spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), and Raman spectroscopy. XRD revealed that these films were oriented along c-axis with hexagonal wurtzite structure. The (002) diffraction peak in the co-doped sample was observed at 33.76° with a slight shift towards lower 2θ values as compared to pure ZnO. The surface morphology of the two thin films was observed to differ. For pure ZnO films, round grains were observed and for IGZO thin films round as well as rod type grains were observed. All thin films synthesized show excellent optical properties with more than 90% transmission in the visible region and band gap of the films is observed to decrease with co-doping. The co doping of In and Ga is therefore expected to provide a broad range optical and physical properties of ZnO thin films for a variety of optoelectronic applications.

Fabrication and Physical Properties of Titanium Nitride/Hydroxyapatite Composites on Polyether Ether Ketone by RF Magnetron Sputtering Technique

NASA Astrophysics Data System (ADS)

Nupangtha, W.; Boonyawan, D.

2017-09-01

Titanium nitride (TiN) coatings have been used very successfully in a variety of applications because of their excellent properties, such as the high hardness meaning good wear resistance and also used for covering medical implants. Hydroxyapatite is a bioactive ceramic that contributes to the restoration of bone tissue, which together with titanium nitride may contribute to obtaining a superior composite in terms of mechanical and bone tissue interaction matters. This paper aims to explain how to optimize deposition conditions for films synthesis on PEEK by varying sputtering parameters such as nitrogen flow rate and direction, deposition time, d-s (target-to-substrate distance) and 13.56 MHz RF power. The plasma conditions used to deposit films were monitored by the optical emission spectroscopy (OES). Titanium nitride/Hydroxyapatite composite films were performed by gas mixture with nitrogen and argon ratio of 1:3 and target-to-substrate distance at 8 cm. The gold colour, as-deposited film was found on PEEK with high hardness and higher surface energy than uncoated PEEK. X-ray diffraction characterization study was carried to study the crystal structural properties of these composites.

Study the target effect on the structural, surface and optical properties of TiO2 thin film fabricated by RF sputtering method

NASA Astrophysics Data System (ADS)

Vyas, Sumit; Tiwary, Rohit; Shubham, Kumar; Chakrabarti, P.

2015-04-01

The effect of target (Ti metal target and TiO2 target) on Titanium Dioxide (TiO2) thin films grown on ITO coated glass substrate by RF magnetron sputtering has been investigated. A comparative study of both the films was done in respect of crystalline structure, surface morphology and optical properties by using X-ray diffractometer (XRD), Atomic Force Microscopy (AFM) studies and ellipsometric measurements. The XRD results confirmed the crystalline structure and indicated that the deposited films have the intensities of anatase phase. The surface morphology and roughness values indicated that the film using Ti metal target has a smoother surface and densely packed with grains as compared to films obtained using TiO2 target. A high transmission in the visible region, and direct band gap of 3.67 eV and 3.75 eV for films derived by using Ti metal and TiO2 target respectively and indirect bandgap of 3.39 eV for the films derived from both the targets (Ti metal and TiO2 target) were observed by the ellipsometric measurements.

Plasma vapor deposited n-indium tin oxide/p-copper indium oxide heterojunctions for optoelectronic device applications

NASA Astrophysics Data System (ADS)

Jaya, T. P.; Pradyumnan, P. P.

2017-12-01

Transparent crystalline n-indium tin oxide/p-copper indium oxide diode structures were fabricated on quartz substrates by plasma vapor deposition using radio frequency (RF) magnetron sputtering. The p-n heterojunction diodes were highly transparent in the visible region and exhibited rectifying current-voltage (I-V) characteristics with a good ideality factor. The sputter power during fabrication of the p-layer was found to have a profound effect on I-V characteristics, and the diode with the p-type layer deposited at a maximum power of 200 W exhibited the highest value of the diode ideality factor (η value) of 2.162, which suggests its potential use in optoelectronic applications. The ratio of forward current to reverse current exceeded 80 within the range of applied voltages of -1.5 to +1.5 V in all cases. The diode structure possessed an optical transmission of 60-70% in the visible region.

New Recording Layer of Recordable Digital Versatile Disc with CrOx Film Using Red Laser

NASA Astrophysics Data System (ADS)

Liu, Chung Ping; Hung, Yao Ti

2006-03-01

In this study, CrOx film deposited by rf magnetron reactive sputtering was used as a new recording layer for a recordable digital versatile disc (DVD-R) with a red laser. X-ray photoelectron spectroscopy (XPS) indicated the films have three major components: CrO2, CrO3, and Cr2O3. From disc dynamic tests and atomic force microscope (AFM) images of a polycarbonate (PC) substrate, a DVD-R structure of PC/ZnS-SiO2 (30 nm)/CrOx (120 nm)/ZnS-SiO2 (40 nm)/Ag (50 nm), deposited by sputtering at an O2/Ar flow rate ratio of 0.4, had an improved carrier-to-noise ratio (CNR). The principle of recording depends primarily on the explosive pressure of the O2 released due to laser heating of the annealed CrOx film.

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Metal-Insulator-Metal Diode Process Development for Energy Harvesting Applications

DTIC Science & Technology

2010-04-01

Sputter Tool Dep Method: Sputtering (DC Magnetron ) Recipe: MC_Pt 1640A_TiO2 1000A_Ti 2000A_500C_1a MC_Pt 1640A_TiO2 1000A_Ti 2000A_300C_1a MC_Pt...thin films were sputtered onto silicon substrates with silicon dioxide overlayers. I-V measurements were taken using an electrical characterization...deposition of the entire MIM material stack to be done without breaking the vacuum within a multi-material system DC sputtering tool. A CAD layout of a MIM

Thermoelectric Mixed Thick-/Thin Film Microgenerators Based on Constantan/Silver.

PubMed

Gierczak, Mirosław; Prażmowska-Czajka, Joanna; Dziedzic, Andrzej

2018-01-12

This paper describes the design, manufacturing and characterization of newly developed mixed thick-/thin film thermoelectric microgenerators based on magnetron sputtered constantan (copper-nickel alloy) and screen-printed silver layers. The thermoelectric microgenerator consists of sixteen thermocouples made on a 34.2 × 27.5 × 0.25 mm³ alumina substrate. One of thermocouple arms was made of magnetron-sputtered constantan (Cu-Ni alloy), the second was a Ag-based screen-printed film. The length of each thermocouple arm was equal to 27 mm, and their width 0.3 mm. The distance between the arms was equal to 0.3 mm. In the first step, a pattern mask with thermocouples was designed and fabricated. Then, a constantan layer was magnetron sputtered over the whole substrate, and a photolithography process was used to prepare the first thermocouple arms. The second arms were screen-printed onto the substrate using a low-temperature silver paste (Heraeus C8829A or ElectroScience Laboratories ESL 599-E). To avoid oxidation of constantan, they were fired in a belt furnace in a nitrogen atmosphere at 550/450 °C peak firing temperature. Thermoelectric and electrical measurements were performed using the self-made measuring system. Two pyrometers included into the system were used for temperature measurement of hot and cold junctions. The estimated Seebeck coefficient, α was from the range 35 - 41 µV/K, whereas the total internal resistances R were between 250 and 3200 ohms, depending on magnetron sputtering time and kind of silver ink (the resistance of a single thermocouple was between 15.5 and 200 ohms).

Thermoelectric Mixed Thick-/Thin Film Microgenerators Based on Constantan/Silver

PubMed Central

Gierczak, Mirosław; Prażmowska-Czajka, Joanna; Dziedzic, Andrzej

2018-01-01

This paper describes the design, manufacturing and characterization of newly developed mixed thick-/thin film thermoelectric microgenerators based on magnetron sputtered constantan (copper-nickel alloy) and screen-printed silver layers. The thermoelectric microgenerator consists of sixteen thermocouples made on a 34.2 × 27.5 × 0.25 mm3 alumina substrate. One of thermocouple arms was made of magnetron-sputtered constantan (Cu-Ni alloy), the second was a Ag-based screen-printed film. The length of each thermocouple arm was equal to 27 mm, and their width 0.3 mm. The distance between the arms was equal to 0.3 mm. In the first step, a pattern mask with thermocouples was designed and fabricated. Then, a constantan layer was magnetron sputtered over the whole substrate, and a photolithography process was used to prepare the first thermocouple arms. The second arms were screen-printed onto the substrate using a low-temperature silver paste (Heraeus C8829A or ElectroScience Laboratories ESL 599-E). To avoid oxidation of constantan, they were fired in a belt furnace in a nitrogen atmosphere at 550/450 °C peak firing temperature. Thermoelectric and electrical measurements were performed using the self-made measuring system. Two pyrometers included into the system were used for temperature measurement of hot and cold junctions. The estimated Seebeck coefficient, α was from the range 35 − 41 µV/K, whereas the total internal resistances R were between 250 and 3200 ohms, depending on magnetron sputtering time and kind of silver ink (the resistance of a single thermocouple was between 15.5 and 200 ohms). PMID:29329203

A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T.

2015-09-15

A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were usedmore » to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.« less

Cathode Priming vs. RF Priming for Relativistic Magnetrons

NASA Astrophysics Data System (ADS)

White, W. M.; Spencer, T. A.; Price, D.

2005-10-01

Magnetron start-oscillation time, pulsewidth and pi-mode locking are experimentally compared for RF priming versus cathode priming on the Michigan-Titan relativistic magnetron (-300 kV, 2-10 kA, 300-500 ns). Cathode priming [1, 2] is an innovative technique first demonstrated experimentally at UM. In this technique, the cathode is fabricated with N/2 emitting strips or N/2-separate cathodes (for an N-cavity magnetron), which generate the desired number of spokes for pi-mode. Cathode priming yields 13% faster startup with more reproducible pi-mode oscillation. Radio Frequency (RF) priming is investigated as the baseline priming technique for magnetrons. The external priming source is a 100kW, 3μs pulsewidth magnetron on loan from AFRL. RF priming reduced startup delay by 15% and increased pulsewidth by 9%. [1] M.C. Jones, V.B. Neculaes, R.M. Gilgenbach, W.M. White, M.R. Lopez, Y.Y. Lau, T.A. Spencer, and D. Price, Rev. Sci. Inst., 75, 2976 (2004) [2] M.C. Jones, Doctoral Dissertation, University of Michigan, 2005

Rarefaction windows in a high-power impulse magnetron sputtering plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmucci, Maria; Britun, Nikolay; Konstantinidis, Stephanos

2013-09-21

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point outmore » on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)« less

One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ziheng, E-mail: ziheng.liu@unsw.edu.au; Hao, Xiaojing; Ho-Baillie, Anita

In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

Alfven's critical ionization velocity observed in high power impulse magnetron sputtering discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brenning, N.; Lundin, D.

2012-09-15

Azimuthally rotating dense plasma structures, spokes, have recently been detected in several high power impulse magnetron sputtering (HiPIMS) devices used for thin film deposition and surface treatment, and are thought to be important for plasma buildup, energizing of electrons, as well as cross-B transport of charged particles. In this work, the drift velocities of these spokes are shown to be strongly correlated with the critical ionization velocity, CIV, proposed by Alfven. It is proposed as the most promising approach in combining the CIV and HiPIMS research fields is to focus on the role of spokes in the process of electronmore » energization.« less

Development of selective surfaces. Semiannual technical progress report, September 11, 1978-April 30, 1979. [Multilayer coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thornton, J.A.

1979-06-15

Magnetron sputtering technology, which permits coatings to be deposited over large areas with significantly increased deposition rates, is reviewed with particular emphasis on cylindrical magnetrons and their application to reactive sputtering. Work is reported in which cylindrical-post magnetron sputtering sources have been used to deposit both graded and multi-layered cermet-type coatings by sputtering chromium and type 304 stainless steel in Ar and O/sub 2/ and Ar and CO gas mixtures under various conditions of reactive gas injection. The substrates are aluminum-coated glass and aluminum foil. The coatings are of an interference type, typically about 100 nm thick, with a metal-rich,more » highly absorbing layer adjacent to the substrate and a dielectric material at the surface. In some cases a reactively sputtered aluminum oxide anti-reflective surface layer has also been used. No advantages have been found for using chromium as opposed to the more readily available stainless steel. The reactive sputtering with CO is attractive because under many conditions the sputtering rates are relatively large compared to oxygen. Hemispherical absorptance and emittance data are reported. Typical absorptances are about 0.90 with emittances of 0.10.« less

Localized traveling ionization zones and their importance for the high power impulse magnetron sputtering process

NASA Astrophysics Data System (ADS)

Maszl, Christian

2016-09-01

High power impulse magnetron sputtering (HiPIMS) is a technique to deposit thin films with superior quality. A high ionization degree up to 90% and the natural occurence of high energetic metal ions are the reason why HiPIMS exceeds direct current magnetron sputtering in terms of coating quality. On the other hand HiPIMS suffers from a reduced efficiency, especially if metal films are produced. Therefore, a lot of research is done by experimentalists and theoreticians to clarify the transport mechanisms from target to substrate and to identify the energy source of the energetic metal ions. Magnetron plasmas are prone to a wide range of wave phenomena and instabilities. Especially, during HiPIMS at elevated power/current densities, symmetry breaks and self-organization in the plasma torus are observed. In this scenario localized travelling ionization zones with certain quasi-mode numbers are present which are commonly referred to as spokes. Because of their high rotation speed compared to typical process times of minutes their importance for thin film deposition was underestimated at first. Recent investigations show that spokes have a strong impact on particle transport, are probably the source of the high energetic metal ions and are therefore the essence of HiPIMS plasmas. In this contribution we will describe the current understanding of spokes, discuss implications for thin film synthesis and highlight open questions. This project is supported by the DFG (German Science Foundation) within the framework of the Coordinated Research Center SFB-TR 87 and the Research Department ``Plasmas with Complex Interactions'' at Ruhr-University Bochum.

Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

NASA Astrophysics Data System (ADS)

Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

2002-02-01

Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

Au doping effects on electrical and optical properties of vanadium dioxides

NASA Astrophysics Data System (ADS)

Zhu, YaBin; He, Fan; Na, Jie

2012-03-01

Vanadium dioxides were fabricated on normal glass substrates using reactive radio frequency (RF) magnetron sputtering. The oxygen flow volume and annealed temperatures as growth parameters are systematically investigated. The electrical and optical properties of VO2 and Au:VO2 thin films with different growth conditions are discussed. The semiconductor-metal phase transition temperature decreased by ˜10°C for the sample with Au doping compared to the sample without Au doping. However, the optical transmittance of Au:VO2 thin films is much lower than that of bare VO2. These results show that Au doping has a marked effect on the electrical and optical properties.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

NASA Technical Reports Server (NTRS)

Coutts, T. J.; Li, X.; Wanlass, M. W.; Emery, K. A.; Gessert, T. A.

1988-01-01

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

Advances in all-sputtered CdTe solar cells on flexible substrates

NASA Astrophysics Data System (ADS)

Wieland, Kristopher; Mahabaduge, Hasitha; Vasko, Anthony; Compaan, Alvin

2010-03-01

The University of Toledo II-VI semiconductor group has developed magnetron sputtering (MS) for the deposition of thin films of CdS, CdTe, and related materials for photovoltaic applications. On glass superstrates, we have reached air mass 1.5 efficiencies of 14%.[1] Recently we have studied the use of MS for the fabrication of thin-film CdS/CdTe cells on flexible polyimide superstrates. This takes advantage of the high film quality that can be achieved at substrate temperatures below 300 C when RF MS is used. Our recent CdS/CdTe solar cells have reached 10.5% on flexible polyimide substrates. [2] This all-sputtered cell (except for back contact) has a structure of polyimide/ZnO:Al/ZnO/CdS/CdTe/Cu/Au. The physics of this device will be discussed through the use of spectral quantum efficiency and current-voltage measurements as a function of CdTe layer thickness. Pathways toward further increases in device efficiencies will also be discussed. [1] Appl. Phys. Lett. 85, 684 (2004) [2] Phys. Stat. Sol. (B) 241, No. 3, 779--782 (2004)

Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn

2016-06-15

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibitedmore » a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.« less

High Resistivity Transparent/Conductive Coatings for Space Applications: Problems and Possible Improvements

NASA Technical Reports Server (NTRS)

Cashman, Thomas; Demko, Rikako; Uppala, Nischala; Vemulapalli, Jyothi; Welch, Bryan; Hambourger, Paul D.

2003-01-01

We have prepared transparent films with a sheet relativity of 10(exp 1) to 10(exp 12) ohm/square by co-depositing a transparent conducting oxide (TCO) with magnesium fluoride, using two independently controlled RF magnetron sputter guns to facilitate adjustment of the film composition, Co-deposited indium tin oxide (ITO) and MgF2 on quartz and flexible polymeric substrate exhibited reasonably stable sheet resistivity over several months' time, with substantially lower optical reflectance than that of pure ITO. However, exposure to low-intensity blue light reduces sheet resistivity by as much as two orders of magnitude. Our results suggest this photoconductivity effect may be present in all InO(x)-based materials. We find that sheet resistivity can by "tuned" by admitting a small amount of high-purity air during deposition offering the possibility of closed loop process control.

Effect of power and type of substrate on calcium-phosphate coating morphology and microhardness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulyashova, Ksenia, E-mail: kseniya@ispms.tsc.ru; Glushko, Yurii, E-mail: glushko@ispms.tsc.ru; Sharkeev, Yurii, E-mail: sharkeev@ispms.tsc.ru

2015-10-27

As known, the influence of the different sputtering process parameters and type of substrate on structure of the deposited coating is important to identify, because these parameters are significantly affected on structure of coating. The studies of the morphology and microhardness of calcium-phosphate (CaP) coatings formed and obtained on the surface of titanium, zirconium, titanium and niobium alloy for different values of the power of radio frequency discharge are presented. The increase in the radio frequency (rf) magnetron discharge leads to the formation of a larger grain structure of the coating. The critical depths of indentation for coatings determining themore » value of their microhardness have been estimated. Mechanical properties of the composite material on the basis of the bioinert substrate metal and CaP coatings are superior to the properties of the separate components that make up this composite material.« less

Highly conductive ultrathin Co films by high-power impulse magnetron sputtering

NASA Astrophysics Data System (ADS)

Jablonka, L.; Riekehr, L.; Zhang, Z.; Zhang, S.-L.; Kubart, T.

2018-01-01

Ultrathin Co films deposited on SiO2 with conductivities exceeding that of Cu are demonstrated. Ionized deposition implemented by high-power impulse magnetron sputtering (HiPIMS) is shown to result in smooth films with large grains and low resistivities, namely, 14 µΩ cm at a thickness of 40 nm, which is close to the bulk value of Co. Even at a thickness of only 6 nm, a resistivity of 35 µΩ cm is obtained. The improved film quality is attributed to a higher nucleation density in the Co-ion dominated plasma in HiPIMS. In particular, the pulsed nature of the Co flux as well as shallow ion implantation of Co into SiO2 can increase the nucleation density. Adatom diffusion is further enhanced in the ionized process, resulting in a dense microstructure. These results are in contrast to Co deposited by conventional direct current magnetron sputtering where the conductivity is reduced due to smaller grains, voids, rougher interfaces, and Ar incorporation. The resistivity of the HiPIMS films is shown to be in accordance with models by Mayadas-Shatzkes and Sondheimer which consider grain-boundary and surface-scattering.

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

NASA Astrophysics Data System (ADS)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Ion-enhanced oxidation of aluminum as a fundamental surface process during target poisoning in reactive magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuschel, Thomas; Keudell, Achim von

2010-05-15

Plasma deposition of aluminum oxide by reactive magnetron sputtering (RMS) using an aluminum target and argon and oxygen as working gases is an important technological process. The undesired oxidation of the target itself, however, causes the so-called target poisoning, which leads to strong hysteresis effects during RMS operation. The oxidation occurs by chemisorption of oxygen atoms and molecules with a simultaneous ion bombardment being present. This heterogenous surface reaction is studied in a quantified particle beam experiment employing beams of oxygen molecules and argon ions impinging onto an aluminum-coated quartz microbalance. The oxidation and/or sputtering rates are measured with thismore » microbalance and the resulting oxide layers are analyzed by x-ray photoelectron spectroscopy. The sticking coefficient of oxygen molecules is determined to 0.015 in the zero coverage limit. The sputtering yields of pure aluminum by argon ions are determined to 0.4, 0.62, and 0.8 at 200, 300, and 400 eV. The variation in the effective sticking coefficient and sputtering yield during the combined impact of argon ions and oxygen molecules is modeled with a set of rate equations. A good agreement is achieved if one postulates an ion-induced surface activation process, which facilitates oxygen chemisorption. This process may be identified with knock-on implantation of surface-bonded oxygen, with an electric-field-driven in-diffusion of oxygen or with an ion-enhanced surface activation process. Based on these fundamental processes, a robust set of balance equations is proposed to describe target poisoning effects in RMS.« less

Particle-in-Cell Modeling of Magnetron Sputtering Devices

NASA Astrophysics Data System (ADS)

Cary, John R.; Jenkins, T. G.; Crossette, N.; Stoltz, Peter H.; McGugan, J. M.

2017-10-01

In magnetron sputtering devices, ions arising from the interaction of magnetically trapped electrons with neutral background gas are accelerated via a negative voltage bias to strike a target cathode. Neutral atoms ejected from the target by such collisions then condense on neighboring material surfaces to form a thin coating of target material; a variety of industrial applications which require thin surface coatings are enabled by this plasma vapor deposition technique. In this poster we discuss efforts to simulate various magnetron sputtering devices using the Vorpal PIC code in 2D axisymmetric cylindrical geometry. Field solves are fully self-consistent, and discrete models for sputtering, secondary electron emission, and Monte Carlo collisions are included in the simulations. In addition, the simulated device can be coupled to an external feedback circuit. Erosion/deposition profiles and steady-state plasma parameters are obtained, and modifications due to self consistency are seen. Computational performance issues are also discussed. and Tech-X Corporation.

Method to control deposition rate instabilities—High power impulse magnetron sputtering deposition of TiO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kossoy, Anna, E-mail: annaeden@hi.is, E-mail: anna.kossoy@gmail.com; Magnusson, Rögnvaldur L.; Tryggvason, Tryggvi K.

2015-03-15

The authors describe how changes in shutter state (open/closed) affect sputter plasma conditions and stability of the deposition rate of Ti and TiO{sub 2} films. The films were grown by high power impulse magnetron sputtering in pure Ar and in Ar/O{sub 2} mixture from a metallic Ti target. The shutter state was found to have an effect on the pulse waveform for both pure Ar and reactive sputtering of Ti also affecting stability of TiO{sub 2} deposition rate. When the shutter opened, the shape of pulse current changed from rectangular to peak-plateau and pulse energy decreased. The authors attribute itmore » to the change in plasma impedance and gas rarefaction originating in geometry change in front of the magnetron. TiO{sub 2} deposition rate was initially found to be high, 1.45 Å/s, and then dropped by ∼40% during the first 5 min, while for Ti the change was less obvious. Instability of deposition rate poses significant challenge for growing multilayer heterostructures. In this work, the authors suggest a way to overcome this by monitoring the integrated average energy involved in the deposition process. It is possible to calibrate and control the film thickness by monitoring the integrated pulse energy and end growth when desired integrated pulse energy level has been reached.« less

Low temperature sputter-deposited ZnO films with enhanced Hall mobility using excimer laser post-processing

NASA Astrophysics Data System (ADS)

Tsakonas, C.; Kuznetsov, V. L.; Cranton, W. M.; Kalfagiannis, N.; Abusabee, K. M.; Koutsogeorgis, D. C.; Abeywickrama, N.; Edwards, P. P.

2017-12-01

We report the low temperature (T  <  70 °C) fabrication of ZnO thin films (~140 nm) with Hall mobility of up to 17.3 cm2 V-1 s-1 making them suitable for thin film transistor (TFT) applications. The films were deposited by rf magnetron sputtering at T  <  70 °C and subsequently laser processed in ambient temperature in order to modify the Hall mobility and carrier concentration. Medium-to-low energy laser radiation densities and a high number of pulses were used to avoid damaging the films. Laser annealing of the films after aging in the lab under 25%-35% relative humidity and at an average illuminance of 120 lux resulted in an overall higher mobility and relatively low carrier concentration in comparison to the non-aged films that were laser processed immediately after deposition. A maximum overall measured Hall mobility of 17.3 cm2 V-1 s-1 at a carrier density of 2.3  ×  1018 cm-3 was measured from a 1 GΩ as deposited and aged film after the laser treatment. We suggest that the aging of non-processed films reduces structural defects mainly at grain boundaries by air species chemisorption, with concomitant increase in thermal conductivity so that laser processing can have an enhancing effect. Such a processing combination can act synergistically and produce suitable active layers for TFT applications with low temperature processing requirements.

Discharge current modes of high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Zhongzhen, E-mail: wuzz@pkusz.edu.cn; Xiao, Shu; Ma, Zhengyong

2015-09-15

Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

Label-free detection of biomolecules with Ta2O5-based field effect devices

NASA Astrophysics Data System (ADS)

Branquinho, Rita Maria Mourao Salazar

Field-effect-based devices (FEDs) are becoming a basic structural element in a new generation of micro biosensors. Their numerous advantages such as small size, labelfree response and versatility, together with the possibility of on-chip integration of biosensor arrays with a future prospect of low-cost mass production, make their development highly desirable. The present thesis focuses on the study and optimization of tantalum pentoxide (Ta2O5) deposited by rf magnetron sputtering at room temperature, and their application as sensitive layer in biosensors based on field effect devices (BioFEDs). As such, the influence of several deposition parameters and post-processing annealing temperature and surface plasma treatment on the film¡¦s properties was investigated. Electrolyte-insulator-semiconductor (EIS) field-effect-based sensors comprising the optimized Ta2O5 sensitive layer were applied to the development of BioFEDs. Enzyme functionalized sensors (EnFEDs) were produced for penicillin detection. These sensors were also applied to the label free detection of DNA and the monitoring of its amplification via polymerase chain reaction (PCR), real time PCR (RT-PCR) and loop mediated isothermal amplification (LAMP). Ion sensitive field effect transistors (ISFETs) based on semiconductor oxides comprising the optimized Ta2O5 sensitive layer were also fabricated. EIS sensors comprising Ta2O5 films produced with optimized conditions demonstrated near Nernstian pH sensitivity, 58+/-0.3 mV/pH. These sensors were successfully applied to the label-free detection of penicillin and DNA. Penicillinase functionalized sensors showed a 29+/-7 mV/mM sensitivity towards penicillin detection up to 4 mM penicillin concentration. DNA detection was achieved with 30 mV/mugM sensitivity and DNA amplification monitoring with these sensors showed comparable results to those obtained with standard fluorescence based methods. Semiconductor oxides-based ISFETs with Ta2O5 sensitive layer were also produced. Finally, the high quality and sensitivity demonstrated by Ta2O5 thin films produced at low temperature by rf magnetron sputtering allows for their application as sensitive layer in field effect sensors.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

NASA Astrophysics Data System (ADS)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; de los Arcos, Teresa; Benedikt, Jan; von Keudell, Achim

2013-10-01

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

Research and Development for an Alternative RF Source Using Magnetrons in CEBAF

NASA Astrophysics Data System (ADS)

Jacobs, Andrew

2016-09-01

At Jefferson Lab, klystrons are currently used as a radiofrequency (RF) power source for the 1497 MHz Continuous Electron Beam Accelerator Facility (CEBAF) Continuous Wave (CW) system. A drop-in replacement for the klystrons in the form of a system of magnetrons is being developed. The klystron DC-RF efficiency at CEBAF is 35-51% while the estimated magnetron efficiency is 80-90%. Thus, the introduction of magnetrons to CEBAF will have enormous benefits in terms of electrical power saving. The primary focus of this project was to characterize a magnetron's frequency pushing and pulling curves at 2.45 GHz with stub tuner and anode current adjustments so that a Low Level RF controller for a new 1.497 GHz magnetron can be built. A Virtual Instrument was created in LabVIEW, and data was taken. The resulting data allowed for the creation of many constant lines of frequency and output power. Additionally, the results provided a characterization of magnetron oven temperature drift over the operation time and the relationship between anode current and frequency. Using these results, the control model of different variables and their feedback or feedforward that affect the frequency pushing and pulling of the magnetron is better developed. Department of Energy, Science Undergraduate Laboratory Internships, and Jefferson Lab.

Improved Magnetron Stability and Reduced Noise in Efficient Transmitters for Superconducting Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Lebedev, V.

State of the art high-current superconducting accelerators require efficient RF sources with a fast dynamic phase and power control. This allows for compensation of the phase and amplitude deviations of the accelerating voltage in the Superconducting RF (SRF) cavities caused by microphonics, etc. Efficient magnetron transmitters with fast phase and power control are attractive RF sources for this application. They are more cost effective than traditional RF sources such as klystrons, IOTs and solid-state amplifiers used with large scale accelerator projects. However, unlike traditional RF sources, controlled magnetrons operate as forced oscillators. Study of the impact of the controlling signalmore » on magnetron stability, noise and efficiency is therefore important. This paper discusses experiments with 2.45 GHz, 1 kW tubes and verifies our analytical model which is based on the charge drift approximation.« less

Adjustable, High Voltage Pulse Generator with Isolated Output for Plasma Processing

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth E.; Prager, James; Slobodov, Ilia

2015-09-01

Eagle Harbor Technologies (EHT), Inc. has developed a high voltage pulse generator with isolated output for etch, sputtering, and ion implantation applications within the materials science and semiconductor processing communities. The output parameters are independently user adjustable: output voltage (0 - 2.5 kV), pulse repetition frequency (0 - 100 kHz), and duty cycle (0 - 100%). The pulser can drive loads down to 200 Ω. Higher voltage pulsers have also been tested. The isolated output allows the pulse generator to be connected to loads that need to be biased. These pulser generators take advantage modern silicon carbide (SiC) MOSFETs. These new solid-state switches decrease the switching and conduction losses while allowing for higher switching frequency capabilities. This pulse generator has applications for RF plasma heating; inductive and arc plasma sources; magnetron driving; and generation of arbitrary pulses at high voltage, high current, and high pulse repetition frequency. This work was supported in part by a DOE SBIR.

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

DOE PAGES

Leng, X.; Bozovic, I.; Bollinger, A. T.

2016-08-10

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

"CHON" particles: The interstellar component of cometary dust

NASA Technical Reports Server (NTRS)

Lien, David J.

1998-01-01

Interstellar dust is characterized by strong absorption in the ultraviolet and the mid-IR. Current models of interstellar dust are based on three chemically distinct components: a form of carbon (usually graphite), a silicate, and a blend of polycyclic aromatic hydrocarbons or other carbonaceous material. Previous work using effective medium theories to understand the optical properties of cometary dust suggested that an amalgam of materials could reproduce the observed interstellar and cometary dust features. Recently, Lawler and Brownlee (1992) re-analyzed the PIA and PUMA-1 data sets from the Giotto flyby of P/Halley and discovered that the so-called "CHON" particles were actually composed of a blend of carbon-bearing and silicon-bearing materials. Based on effective medium theories, the absorption spectrum of such a material would display the spectral features of each of the components - strong UV absorption from the carbonaceous component and strong absorption in the IR from the silicate component. To test this idea, vapor-deposited samples were created using two different deposition techniques: sputtering with an argon RF magnetron and deposition from an argon plasma torch. Two different compositions were tested: a blend of graphite and silica in a 7:1 ratio and an amalgam of materials whose approximate composition matches the "CHON"-silicate abundances for the uncompressed PIA data set of Lawler and Brownlee: graphite, iron oxide, magnesium oxide, ammonium sulfate, calcium carbonate, and silica in mass ratios of 6:4.3:4:2.2:1:9. The samples were finely ground and pressed into 2" diameter disks using a 40 ton press. In all, four different experiments were performed: one with each of the compositions (C:SiO and "CHON") in both the RF magnetron and the plasma torch chambers. The RF magnetron created a uniform dark thin film on the substrate surface, and the plasma torch created a coating of small (<100 micron) diameter grey particles. The spectra of all four samples show a strong, broad absorption feature at around 220 nm as well as a strong but narrower absorption peak near 10 microns. The RF magnetron sputtered samples showed some sub-structure in the UV, and the peak of the absorption was shifted toward longer wavelengths. The UV absorption in the plasma torch deposited samples have no sub-structure, and the peak absorption is very near 220 nm. Strong absorption near 9 microns is seen in the spectra from both sample preparation techniques, and is consistent with the IR spectra of some terrestrial silicates. Other features, particularly at 6.2 and 8.6 microns, are seen in the interstellar medium. A strong feature near 2 microns is due to absorbed water in the sample. Based on the results of these experiments, there is evidence that a material with a composition similar to that detected in "CHON" particles in the coma of P/Halley have a spectral signature which reproduces the main absorption features of interstellar dust. This suggests that the "CHON" particles could be the interstellar component of cometary dust.

Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Liu, Cui; Li, Guo-Qing; Gou, Wei; Mu, Zong-Xin; Zhang, Cheng-Wu

2004-11-01

Smooth, dense and uniform diamond-like carbon films (DLC films) for industrial applications have successfully been prepared by dual-target unbalanced magnetron sputtering and the DLC characteristics of the films are confirmed by Raman spectra. It is found that the sputtering current of target plays an important role in the DLC film deposition. Deposition rate of 3.5 μm/h is obtained by using the sputtering current of 30 A. The friction coefficient of the films is 0.2-0.225 measured by using a pin-on-disc microtribometer. The structure of the films tends to have a growth of sp3 bonds content at high sputtering current. The compressive residual stress in the films increases with the increasing sputtering current of the target.

Combined experimental and theoretical description of direct current magnetron sputtering of Al by Ar and Ar/N2 plasma

NASA Astrophysics Data System (ADS)

Trieschmann, Jan; Ries, Stefan; Bibinov, Nikita; Awakowicz, Peter; Mráz, Stanislav; Schneider, Jochen M.; Mussenbrock, Thomas

2018-05-01

Direct current magnetron sputtering of Al by Ar and Ar/N2 low pressure plasmas was characterized by experimental and theoretical means in a unified consideration. Experimentally, the plasmas were analyzed by optical emission spectroscopy, while the film deposition rate was determined by weight measurements and laser optical microscopy, and the film composition by energy dispersive x-ray spectroscopy. Theoretically, a global particle and power balance model was used to estimate the electron temperature T e and the electron density n e of the plasma at constant discharge power. In addition, the sputtering process and the transport of the sputtered atoms were described using Monte Carlo models—TRIDYN and dsmcFoam, respectively. Initially, the non-reactive situation is characterized based on deposition experiment results, which are in agreement with predictions from simulations. Subsequently, a similar study is presented for the reactive case. The influence of the N2 addition is found to be twofold, in terms of (i) the target and substrate surface conditions (e.g., sputtering, secondary electron emission, particle sticking) and (ii) the volumetric changes of the plasma density n e governing the ion flux to the surfaces (e.g., due to additional energy conversion channels). It is shown that a combined experimental/simulation approach reveals a physically coherent and, in particular, quantitative understanding of the properties (e.g., electron density and temperature, target surface nitrogen content, sputtered Al density, deposited mass) involved in the deposition process.

Effect of Silver Dopants on the ZnO Thin Films Prepared by a Radio Frequency Magnetron Co-Sputtering System

PubMed Central

Liu, Fang-Cheng; Li, Jyun-Yong; Chen, Tai-Hong; Chang, Chun-How; Lee, Ching-Ting; Hsiao, Wei-Hua; Liu, Day-Shan

2017-01-01

Ag-ZnO co-sputtered films at various atomic ratios of Ag (Ag/(Ag + Zn) at.%) were prepared by a radio frequency magnetron cosputtering system, using the co-sputtered targets of Ag and ZnO. The activation of the Ag acceptors (AgZn) and the formation of the Ag aggregations (Ag0) in the ZnO matrix were investigated from XRD, Raman scattering, and XPS measurements. The Ag-ZnO co-sputtered film behaving like a p-type conduction was achievable after annealing at 350 °C under air ambient for 1 h. PMID:28773159

DC magnetron sputtered polyaniline-HCl thin films for chemical sensing applications.

PubMed

Menegazzo, Nicola; Boyne, Devon; Bui, Holt; Beebe, Thomas P; Booksh, Karl S

2012-07-03

Thin films of conducting polymers exhibit unique chemical and physical properties that render them integral parts in microelectronics, energy storage devices, and chemical sensors. Overall, polyaniline (PAni) doped in acidic media has shown metal-like electronic conductivity, though exact physical and chemical properties are dependent on the polymer structure and dopant type. Difficulties arising from poor processability render production of doped PAni thin films particularly challenging. In this contribution, DC magnetron sputtering, a physical vapor deposition technique, is applied to the preparation of conductive thin films of PAni doped with hydrochloric acid (PAni-HCl) in an effort to circumvent issues associated with conventional thin film preparation methods. Samples manufactured by the sputtering method are analyzed along with samples prepared by conventional drop-casting. Physical characterization (atomic force microscopy, AFM) confirm the presence of PAni-HCl and show that films exhibit a reduced roughness and potentially pinhole-free coverage of the substrate. Spectroscopic evidence (UV-vis, FT-IR, and X-ray photoelectron spectroscopy (XPS)) suggests that structural changes and loss of conductivity, not uncommon during PAni processing, does occur during the preparation process. Finally, the applicability of sputtered films to gas-phase sensing of NH(3) was investigated with surface plasmon resonance (SPR) spectroscopy and compared to previous contributions. In summary, sputtered PAni-HCl films exhibit quantifiable, reversible behavior upon exposure to NH(3) with a calculated LOD (by method) approaching 0.4 ppm NH(3) in dry air.

On the road to self-sputtering in high power impulse magnetron sputtering: particle balance and discharge characteristics

NASA Astrophysics Data System (ADS)

Huo, Chunqing; Lundin, Daniel; Raadu, Michael A.; Anders, André; Tomas Gudmundsson, Jon; Brenning, Nils

2014-04-01

The onset and development of self-sputtering (SS) in a high power impulse magnetron sputtering (HiPIMS) discharge have been studied using a plasma chemical model and a set of experimental data, taken with an aluminum target and argon gas. The model is tailored to duplicate the discharge in which the data are taken. The pulses are long enough to include both an initial transient and a following steady state. The model is used to unravel how the internal discharge physics evolves with pulse power and time, and how it is related to features in the discharge current-voltage-time characteristics such as current densities, maxima, kinks and slopes. The connection between the self-sputter process and the discharge characteristics is quantified and discussed in terms of three parameters: a critical target current density Jcrit based on the maximum refill rate of process (argon) gas above the target, an SS recycling factor ΠSS-recycle, and an approximation \\tilde{\\alpha} of the probabilities of ionization of species that come from the target (both sputtered metal and embedded argon atoms). For low power pulses, discharge voltages UD ⩽ 380 V with peak current densities below ≈ 0.2 A cm-2, the discharge is found to be dominated by process gas sputtering. In these pulses there is an initial current peak in time, associated with partial gas rarefaction, which is followed by a steady-state-like plateau in all parameters similar to direct current magnetron sputtering. In contrast, high power pulses, with UD ⩾ 500 V and peak current densities above JD ≈ 1.6 A cm-2, make a transition to a discharge mode where SS dominates. The transition is found not to be driven by process gas rarefaction which is only about 10% at this time. Maximum gas rarefaction is found later in time and always after the initial peak in the discharge current. With increasing voltage, and pulse power, the discharge can be described as following a route where the role of SS increases in four steps: process gas sputtering, gas-sustained SS, self-sustained SS and SS runaway. At the highest voltage, 1000 V, the discharge is very close to, but does not go into, the SS runaway mode. This absence of runaway is proposed to be connected to an unexpected finding: that twice ionized ions of the target species play almost no role in this discharge, not even at the highest powers. This reduces ionization by secondary-emitted energetic electrons almost to zero in the highest power range of the discharge.

Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy.

PubMed

Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

2018-04-05

This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2kV and a power supply system equipped with 25/50μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp 3 /sp 2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp 3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp 3 /sp 2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp 3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed. Copyright © 2018 Elsevier B.V. All rights reserved.

Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

2011-10-01

Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

Resonant interaction of the electron beam with a synchronous wave in controlled magnetrons for high-current superconducting accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Lebedev, V.

A simplified analytical model of the resonant interaction of the beam of Larmor electrons drifting in the crossed constant fields of a magnetron with a synchronous wave providing a phase grouping of the drifting charge was developed to optimize the parameters of an rf resonant injected signal driving the magnetrons for management of phase and power of rf sources with a rate required for superconducting high-current accelerators. The model, which considers the impact of the rf resonant signal injected into the magnetron on the operation of the injection-locked tube, substantiates the recently developed method of fast power control of magnetronsmore » in the range up to 10 dB at the highest generation efficiency, with low noise, precise stability of the carrier frequency, and the possibility of wideband phase control. Experiments with continuous wave 2.45 GHz, 1 kW microwave oven magnetrons have verified the correspondence of the behavior of these tubes to the analytical model. A proof of the principle of the novel method of power control in magnetrons, based on the developed model, was demonstrated in the experiments. The method is attractive for high-current superconducting rf accelerators. This study also discusses vector methods of power control with the rates required for superconducting accelerators, the impact of the rf resonant signal injected into the magnetron on the rate of phase control of the injection-locked tubes, and a conceptual scheme of the magnetron transmitter with highest efficiency for high-current accelerators.« less

Resonant interaction of the electron beam with a synchronous wave in controlled magnetrons for high-current superconducting accelerators

DOE PAGES

Kazakevich, G.; Johnson, R.; Lebedev, V.; ...

2018-06-14

A simplified analytical model of the resonant interaction of the beam of Larmor electrons drifting in the crossed constant fields of a magnetron with a synchronous wave providing a phase grouping of the drifting charge was developed to optimize the parameters of an rf resonant injected signal driving the magnetrons for management of phase and power of rf sources with a rate required for superconducting high-current accelerators. The model, which considers the impact of the rf resonant signal injected into the magnetron on the operation of the injection-locked tube, substantiates the recently developed method of fast power control of magnetronsmore » in the range up to 10 dB at the highest generation efficiency, with low noise, precise stability of the carrier frequency, and the possibility of wideband phase control. Experiments with continuous wave 2.45 GHz, 1 kW microwave oven magnetrons have verified the correspondence of the behavior of these tubes to the analytical model. A proof of the principle of the novel method of power control in magnetrons, based on the developed model, was demonstrated in the experiments. The method is attractive for high-current superconducting rf accelerators. This study also discusses vector methods of power control with the rates required for superconducting accelerators, the impact of the rf resonant signal injected into the magnetron on the rate of phase control of the injection-locked tubes, and a conceptual scheme of the magnetron transmitter with highest efficiency for high-current accelerators.« less

Fabrication and characterization of La2Zr2O7 films on different buffer architectures for YBa2Cu3O7-δ coated conductors by RF magnetron sputtering.

PubMed

Xu, Da; Liu, Linfei; Xiao, Guina; Li, Yijie

2013-02-27

La2Zr2O7 (LZO) films were grown on different buffer architectures by radio frequency magnetron sputtering for the large-scale application of YBa2Cu3O7-x (YBCO)-coated conductors. The three different buffer architectures were cerium oxide (CeO2), yttria-stabilized zirconia (YSZ)/CeO2, and CeO2/YSZ/CeO2. The microstructure and surface morphology of the LZO film were studied by X-ray diffraction, optical microscopy, field emission scanning electron microscopy, and atomic force microscopy. The LZO films prepared on the CeO2, YSZ/CeO2, and CeO2/YSZ/CeO2 buffer architectures were preferentially c-axis-oriented and highly textured. The in-plane texture of LZO film on CeO2 single-buffer architecture was ∆ φ = 5.5° and the out-of-plane texture was ∆ ω = 3.4°. All the LZO films had very smooth surfaces, but LZO films grown on YSZ/CeO2 and CeO2/YSZ/CeO2 buffer architectures had cracks. The highly textured LZO film grown on CeO2-seed buffered NiW tape was suitable for the epitaxial growth of YBCO film with high currents.

Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

NASA Astrophysics Data System (ADS)

Zhao, Yan; Gao, Wei; Xu, Bo; Li, Ying-Ai; Li, Hong-Dong; Gu, Guang-Rui; Yin, Hong

2016-10-01

The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51572105, 61504046, and 51272224), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, the Development and Reform Commission of Jilin Province, China (Grant No. 2015Y050), and the Scientific Research Foundation for the Returned Overseas of Jilin Province, China.

Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (BixTiyOz) Films Produced through Radiofrequency Magnetron Sputtering

PubMed Central

Alfonso, José E.; Olaya, Jhon J.; Pinzón, Manuel J.; Marco, José F.

2013-01-01

The applications of Bismuth Titanate (BixTiyOz) materials have been focused on their electronic and optical properties, but with respect to the use of these compounds in applications like corrosion resistance, have been very few or nonexistent. For this reason, in the present investigation BixTiyOz thin films were deposited using RF magnetron sputtering onto silicon wafers, stainless steel 316L, and titanium alloy (Ti6Al4V) substrates, in order to carry out a study of the corrosion behavior of this compound. The structural properties of the coatings were studied through X-ray diffraction (XRD), the morphology was determined using Scanning Electron Microscopy (SEM), the corrosion resistance behavior of the coated and uncoated substrates was evaluated via the Potentiodynamic Polarization technique, and surface chemical composition was evaluated through X-ray photoelectron spectroscopy (XPS). The XRD results indicated that the films were amorphous. The SEM micrographs showed that the deposited films were homogeneous, but in some cases there were cracks. The potentiodynamic polarization technique showed that the corrosion current in the coated substrates decreased by an order of two magnitudes with respect to the uncoated substrates, but in both cases the corrosion mechanism was pitting due to the pores in the film. The XPS analysis shows that the deposited films contain both Bi3+ and Ti4+. PMID:28788338

Potentiodynamic Polarization Studies and Surface Chemical Composition of Bismuth Titanate (Bi x Ti y O z ) Films Produced through Radiofrequency Magnetron Sputtering.

PubMed

Alfonso, José E; Olaya, Jhon J; Pinzón, Manuel J; Marco, José F

2013-10-08

The applications of Bismuth Titanate (Bi x Ti y O z ) materials have been focused on their electronic and optical properties, but with respect to the use of these compounds in applications like corrosion resistance, have been very few or nonexistent. For this reason, in the present investigation Bi x Ti y O z thin films were deposited using RF magnetron sputtering onto silicon wafers, stainless steel 316L, and titanium alloy (Ti₆Al₄V) substrates, in order to carry out a study of the corrosion behavior of this compound. The structural properties of the coatings were studied through X-ray diffraction (XRD), the morphology was determined using Scanning Electron Microscopy (SEM), the corrosion resistance behavior of the coated and uncoated substrates was evaluated via the Potentiodynamic Polarization technique, and surface chemical composition was evaluated through X-ray photoelectron spectroscopy (XPS). The XRD results indicated that the films were amorphous. The SEM micrographs showed that the deposited films were homogeneous, but in some cases there were cracks. The potentiodynamic polarization technique showed that the corrosion current in the coated substrates decreased by an order of two magnitudes with respect to the uncoated substrates, but in both cases the corrosion mechanism was pitting due to the pores in the film. The XPS analysis shows that the deposited films contain both Bi 3+ and Ti 4+ .

Langmuir Probe Measurements in a Grid-Assisted Magnetron Sputtering System

NASA Astrophysics Data System (ADS)

Sagás, Julio César; Pessoa, Rodrigo Sávio; Maciel, Homero Santiago

2018-02-01

The grid-assisted magnetron sputtering is a variation of the magnetron sputtering commonly used for thin film deposition. In this work, Langmuir probe measurements were performed in such a system by using the grid under two basic and practical electrical conditions, i.e., floating and grounded. The results show that grounding the grid leads to an enhancement of the plasma confinement and to increases in both floating and plasma potential, as inferred from the probe characteristics. The grounded grid drains electrons from the plasma, acting as an auxiliary anode and reducing the plasma diffusion toward the chamber walls. For the same discharge current, the improved confinement results in a lower electron temperature when compared to floating condition, although the electron densities are comparable in both cases.

An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources.

PubMed

Weichsel, T; Hartung, U; Kopte, T; Zschornack, G; Kreller, M; Silze, A

2014-05-01

An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10(10) cm(-3) to 1 × 10(11) cm(-3), when the magnetron plasma is exposed to the magnetic mirror field of the ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10(18) atoms/s for aluminum, which meets the demand for the production of a milliampere Al(+) ion beam.

Reduced atomic shadowing in HiPIMS: Role of the thermalized metal ions

NASA Astrophysics Data System (ADS)

Oliveira, João Carlos; Ferreira, Fábio; Anders, André; Cavaleiro, Albano

2018-03-01

In magnetron sputtering, the ability to tailor film properties depends primarily on the control of the flux of particles impinging on the growing film. Among deposition mechanisms, the shadowing effect leads to the formation of a rough surface and a porous, columnar microstructure. Re-sputtered species may be re-deposited in the valleys of the films surface and thereby contribute to a reduction of roughness and to fill the underdense regions. Both effects are non-local and they directly compete to shape the final properties of the deposited films. Additional control of the bombarding flux can be obtained by ionizing the sputtered flux, because ions can be controlled with respect to their energy and impinging direction, such as in High-Power Impulse Magnetron Sputtering (HiPIMS). In this work, the relation between ionization of the sputtered species and thin film properties is investigated in order to identify the mechanisms which effectively influence the shadowing effect in Deep Oscillation Magnetron Sputtering (DOMS), a variant of HiPIMS. The properties of two Cr films deposited using the same averaged target power by d.c. magnetron sputtering and DOMS have been compared. Additionally, the angle distribution of the Cr species impinging on the substrate was simulated using Monte Carlo-based programs while the energy distribution of the energetic particles bombarding the substrate was evaluated by energy-resolved mass analysis. It was found that the acceleration of the thermalized chromium ions at the substrate sheath in DOMS significantly reduces the high angle component of their impinging angle distribution and, thus, efficiently reduces atomic shadowing. Therefore, a high degree of ionization in HiPIMS results in almost shadowing effect-free film deposition and allows us to deposit dense and compact films without the need of high energy particle bombardment during growth.

Fabrication and deformation behaviour of multilayer Al2O3/Ti/TiO2 nanotube arrays.

PubMed

Baradaran, S; Basirun, W J; Zalnezhad, E; Hamdi, M; Sarhan, Ahmed A D; Alias, Y

2013-04-01

In this study, titanium thin films were deposited on alumina substrates by radio frequency (RF) magnetron sputtering. The mechanical properties of the Ti coatings were evaluated in terms of adhesion strength at various RF powers, temperatures, and substrate bias voltages. The coating conditions of 400W of RF power, 250°C, and a 75V substrate bias voltage produced the strongest coating adhesion, as obtained by the Taguchi optimisation method. TiO2 nanotube arrays were grown as a second layer on the Ti substrates using electrochemical anodisation at a constant potential of 20V and anodisation times of 15min, 45min, and 75min in a NH4F electrolyte solution (75 ethylene glycol: 25 water). The anodised titanium was annealed at 450°C and 650°C in a N2 gas furnace to obtain different phases of titania, anatase and rutile, respectively. The mechanical properties of the anodised layer were investigated by nanoindentation. The results indicate that Young's modulus and hardness increased with annealing temperature to 650°C. Copyright © 2013 Elsevier Ltd. All rights reserved.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, Daniel M.; McKernan, Mark A.

1995-01-01

A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

Effect of different methods of preliminary surface treatment and magnetron sputtering on the adhesion of Si coatings

NASA Astrophysics Data System (ADS)

Borisov, D. P.; Slabodchikov, V. A.; Kuznetsov, V. M.

2017-05-01

The paper presents research results on the adhesion of Si coatings deposited by magnetron sputtering on NiTi substrates after preliminary surface treatment (cleaning and activation) with low-energy ion beams and gas discharge plasma. The adhesion properties of the coatings obtained by two methods are analyzed and compared using data of scratch and spherical abrasion tests.

Photoluminescence of ZnS-SiO2:Ce Thin Films Deposited by Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Mizuno, Masao

2011-12-01

Photoluminescent emissions of zinc sulfide-silica-cerium thin films deposited by magnetron sputtering were observed. The films consisted of ZnS nanocrystals embedded in amorphous SiO2 matrices. ZnS-SiO2:Ce films exhibited photoluminescence even without postannealing. Their emission spectra showed broad patterns in the visible range; the emitted colors depended on film composition.

Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

2018-01-01

The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

Correlation of structural properties with energy transfer of Eu-doped ZnO thin films prepared by sol-gel process and magnetron reactive sputtering

PubMed Central

Petersen, Julien; Brimont, Christelle; Gallart, Mathieu; Schmerber, Guy; Gilliot, Pierre; Ulhaq-Bouillet, Corinne; Rehspringer, Jean-Luc; Colis, Silviu; Becker, Claude; Slaoui, Abdelillah; Dinia, Aziz

2010-01-01

We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu2+ and Eu3+ into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn2+ as Eu2+ into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu2O3 oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the 5D0→7F2 Eu3+ transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu3+ ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films. PMID:20644657

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

NASA Technical Reports Server (NTRS)

Nahra, J. J.; Bhasin, K. B.; Toncich, S. S.; Subramanyam, G.; Kapoor, V. J.

1992-01-01

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Ruthenium oxide ion selective thin-film electrodes for engine oil acidity monitoring

NASA Astrophysics Data System (ADS)

Maurya, D. K.; Sardarinejad, A.; Alameh, K.

2015-06-01

We demonstrate the concept of a low-cost, rugged, miniaturized ion selective electrode (ISE) comprising a thin film RuO2 on platinum sensing electrode deposited using RF magnetron sputtered in conjunction with an integrated Ag/AgCl and Ag reference electrodes for engine oil acidity monitoring. Model oil samples are produced by adding nitric acid into fresh fully synthetic engine oil and used for sensor evaluation. Experimental results show a linear potential-versus-acid-concentration response for nitric acid concentration between 0 (fresh oil) to 400 ppm, which demonstrate the accuracy of the RuO2 sensor in real-time operation, making it attractive for use in cars and industrial engines.

Magnetic nanomotor fabrication by plasma coating method and its biological application

NASA Astrophysics Data System (ADS)

Oksuz, Lutfi; Yurdabak Karaca, Gozde; Uygun, Emre; Uygun Oksuz, Aysegul

2017-10-01

Nano/micro scale motors are exciting research area due to a wide range of application area especially offer considerable promise for the diagnosis and treatment of the diseases. In this scope, the preparation and characterization of Gold (Au)/ Nickel (Ni) nanomotors transport and their applications based on the detection of miRNA-21 will be examined. In addition, magnetic segment Ni which was coated by RF magnetron sputter technique on to the electrochemical synthesized Au nanowire can also be used to focus on the controlled movement and target. We propose a sensitive stable plasma coated magnetic nanomotor-based approach for miRNA-21 detection for simple and cancer diagnosis.

Fabrication and chemical composition of RF magnetron sputtered Tl-Ca-Ba-Cu-O high Tc superconducting thin films

NASA Technical Reports Server (NTRS)

Subramanyam, G.; Radpour, F.; Kapoor, V. J.; Lemon, G. H.

1990-01-01

The preparation of TlCaBaCuO superconducting thin films on (100) SrTiO3 substrates is described, and the results of their characterization are presented. Sintering and annealing the thin films in a Tl-rich ambient yielded superconductivity with a Tc of 107 K. The results of an XPS study support two possible mechanisms for the creation of holes in the TlCaBaCuO compound: (1) partial substitution of Ca(2+) for Tl(3+), resulting in hole creation, and (2) charge transfer from Tl(3+) to the CuO layers, resulting in a Tl valence between +3 and +1.

Optimized dielectric properties of SrTiO3:Nb /SrTiO3 (001) films for high field effect charge densities

NASA Astrophysics Data System (ADS)

Cai, Xiuyu; Frisbie, C. Daniel; Leighton, C.

2006-12-01

The authors report the growth, structural and electrical characterizations of SrTiO3 films deposited on conductive SrTiO3:Nb (001) substrates by high pressure reactive rf magnetron sputtering. Optimized deposition parameters yield smooth epitaxial layers of high crystalline perfection with a room temperature dielectric constant ˜200 (for a thickness of 1150Å). The breakdown fields in SrTiO3:Nb /SrTiO3/Ag capacitors are consistent with induced charge densities >1×1014cm-2 for both holes and electrons, making these films ideal for high charge density field effect devices.

Surface Morphology of Undoped and Doped ZnSe Films

NASA Technical Reports Server (NTRS)

George, T.; Hayes, M.; Chen, H.; Chattopadhyay, K.; Thomas E.; Morgan, S.; Burger, A.

1998-01-01

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

In vitro evaluation of different heat-treated radio frequency magnetron sputtered calcium phosphate coatings.

PubMed

Yonggang, Yan; Wolke, Joop G C; Yubao, Li; Jansen, John A

2007-06-01

Surface chemical compositions, such as calcium/phosphorus ratio and phase content, have a strong influence on the bioactivity and biocompatibility of calcium phosphate (CaP) coatings as applied on orthopedic and dental implants. Hydroxylapatite (HA) and dicalcium pyrophosphate (DCPP) coatings were prepared on titanium substrates by RF magnetron sputter deposition. The surfaces were left as-prepared (amorphous HA coating; A-HA, amorphous DCPP coating; A-DCPP) or heat treated with: infrared (IR) at 550 degrees C (I-HA) or at 650 degrees C (I-DCPP), and a water steam at 140 degrees C (S-HA and S-DCPP). The surface changes of these coatings were determined after incubation in simulated body fluid (SBF). Also, the growth of rat bone marrow cells (RBM) was studied with scanning electron microscopy (SEM). Both IR and water steam heat treatment changed the sputter-deposited coatings from the amorphous into the crystalline phase. As-prepared amorphous coatings dissolved partially in SBF within 4 weeks of incubation, while heat-treated coatings supported the deposition of a precipitate, i.e., carbonated apatite on both I-HA and S-HA specimens, and tricalciumphosphate on the I-DCPP and S-DCPP specimens. The Ca/P ratio of the A-HA, I-HA, S-HA, A-DCPP, I-DCPP and S-DCPP coatings changed, respectively, from 1.98 to 1.12, 2.01 to 1.76, 1.91 to 1.68, 0.76 to 1.23, 0.76 to 1.26 and 1.62 to 1.55 after 4 weeks of incubation in SBF. Finally, the RBM cells grew well on all heat-treated coatings, but showed different mineralization morphology during cell culturing. The different heat-treatment procedures for the sputtered HA and DCPP coatings influenced the surface characteristics of these coatings, whereby a combination of crystallinity and specific phase composition (Ca/P ratio) strongly affected their in vitro bioactivity.

In-situ co-doping of sputter-deposited TiO2:WN films for the development of photoanodes intended for visible-light electro-photocatalytic degradation of emerging pollutants

NASA Astrophysics Data System (ADS)

Delegan, N.; Pandiyan, R.; Komtchou, S.; Dirany, A.; Drogui, P.; El Khakani, M. A.

2018-05-01

We report on the magnetron sputtering deposition of in-situ codoped TiO2:WN films intended for electro-photocatalytic (EPC) applications under solar irradiation. By varying the RF-magnetron sputtering deposition parameters, we were able to tune the in-situ incorporation of both N and W dopants in the TiO2 films over a wide concentration range (i.e., 0-9 at. % for N and 0-3 at. % for W). X-ray photoelectron spectroscopy analysis revealed that both dopants are mostly of a substitutional nature. The analysis of the UV-Vis transmission spectra of the films confirmed that the optical bandgap of both TiO2:N and TiO2:WN films can be significantly narrowed (from 3.2 eV for undoped-TiO2 down to ˜2.3 eV for the doped ones) by tuning their dopant concentrations. We were thus able to pinpoint an optimal window for both dopants (N and W) where the TiO2:WN films exhibit the narrowest bandgap. Moreover, the optimal codoping conditions greatly reduce the recombination defect state density compared to the monodoped TiO2:N films. These electronically passivated TiO2:WN films are shown to be highly effective for the EPC degradation of atrazine (pesticide pollutant) under sunlight irradiation (93% atrazine degraded after only 30 min of EPC treatment). Indeed, the optimally codoped TiO2:WN photoanodes were found to be more efficient than both the undoped-TiO2 and equally photosensitized TiO2:N photoanodes (by ˜70% and ˜25%, respectively) under AM1.5 irradiation.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

RETRACTED: Application of RF magnetron sputtering for growth of AZO on glass substrate

NASA Astrophysics Data System (ADS)

Ghorannevis, Z.; Akbarnejad, E.; Salar Elahi, A.; Ghoranneviss, M.

2016-08-01

This article has been retracted: please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Principal Editor. After a thorough investigation, the Editor has concluded that the review process for this article was compromised. The acceptance was based on information from at least one reviewer report that was submitted from an email account provided to the journal as a suggested reviewer during the submission of the article. Although purportedly a real reviewer account, the Editor has concluded that this was not of an appropriate, independent reviewer. This manipulation of the peer-review process represents a clear violation of the fundamentals of peer review, our publishing policies, and publishing ethics standards. Apologies are offered to the reviewers whose identities were assumed and to the readers of the journal that this deception was not detected during the submission process. In addition, the author names Z. Ghorannevis and E. Akbarnejad were added to the article at revision - the corresponding author was not able to explain the reason.

The role of nanoscale seed layers on the enhanced performance of niobium doped TiO 2 thin films on glass

DOE PAGES

Nikodemski, Stefan; Dameron, Arrelaine A.; Perkins, John D.; ...

2016-09-09

Transparent conducting oxide (TCO) coatings with decreased cost and greater process or performance versatility are needed for a variety of optoelectronic applications. Among potential new TCO candidates, doped titanium dioxide is receiving particular interest. In this study, niobium-doped titania bilayer structures consisting of a nanoscale seed layer (deposited by atomic layer deposition or RF magnetron sputtering) followed by a thick bulk-like layer were grown directly on glass in order to examine the effects of the seed layer processing on the subsequent crystallization and electrical properties of these heterostructures. Observations from Raman spectroscopy suggest that higher oxygen content in the seedmore » layer suppresses the formation of detrimental titania polymorph phases, found in films produced by annealing directly after synthesis without any exposure to oxygen. Here, our results indicate that the generation of excellent Nb:TiO 2 conductors on glass (without breaking vacuum) only occurs within a narrow processing range and that the sequential deposition of oxygen-poor layers on oxygen-rich layers is a critical step towards achieving films with low resistivity.« less

Deuterium trapping in the carbon-silicon co-deposition layers prepared by RF sputtering in D2 atmosphere

NASA Astrophysics Data System (ADS)

Zhang, Hongliang; Zhang, Weiyuan; Su, Ranran; Tu, Hanjun; Shi, Liqun; Hu, Jiansheng

2018-04-01

Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 μm diameters were observed on the surface.

Indium oxide-based transparent conductive films deposited by reactive sputtering using alloy targets

NASA Astrophysics Data System (ADS)

Miyazaki, Yusuke; Maruyama, Eri; Jia, Junjun; Machinaga, Hironobu; Shigesato, Yuzo

2017-04-01

High-quality transparent conductive oxide (TCO) films, Sn-doped In2O3 (ITO) and In2O3-ZnO (IZO), were successfully deposited on either synthetic silica or polyethylene terephthalate (PET) substrates in the “transition region” by reactive dc magnetron sputtering using In-Zn and In-Sn alloy targets, respectively, with a specially designed plasma emission feedback system. The composition, crystallinity, surface morphology, and electrical and optical properties of the films were analyzed. All of the IZO films were amorphous, whereas the ITO films were polycrystalline over a wide range of deposition conditions. The minimum resistivities of the IZO and ITO films deposited on the heated PET substrates at 150 °C were 3.3 × 10-4 and 5.4 × 10-4 Ω·cm, respectively. By applying rf bias to unheated PET substrates, ITO films with a resistivity of 4.4 × 10-4 Ω·cm were deposited at a dc self-bias voltage of -60 V.

Highly antibacterial activity of N-doped TiO2 thin films coated on stainless steel brackets under visible light irradiation

NASA Astrophysics Data System (ADS)

Cao, Shuai; Liu, Bo; Fan, Lingying; Yue, Ziqi; Liu, Bin; Cao, Baocheng

2014-08-01

In this study, the radio frequency (RF) magnetron sputtering method was used to prepare a TiO2 thin film on the surface of stainless steel brackets. Eighteen groups of samples were made according to the experimental parameters. The crystal structure and surface morphology were characterized by X-ray diffraction, and scanning electron microscopy, respectively. The photocatalytic properties under visible light irradiation were evaluated by measuring the degradation ratio of methylene blue. The sputtering temperature was set at 300 °C, and the time was set as 180 min, the ratio of Ar to N was 30:1, and annealing temperature was set at 450 °C. The thin films made under these parameters had the highest visible light photocatalytic activity of all the combinations of parameters tested. Antibacterial activities of the selected thin films were also tested against Lactobacillus acidophilus and Candida albicans. The results demonstrated the thin film prepared under the parameters above showed the highest antibacterial activity.

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer

PubMed Central

Cai, Wensi; Ma, Xiaochen; Zhang, Jiawei; Song, Aimin

2017-01-01

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO2 have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm2 at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 105. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices. PMID:28772789

Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.

PubMed

Cai, Wensi; Ma, Xiaochen; Zhang, Jiawei; Song, Aimin

2017-04-20

Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. Recently, EDL TFTs gated with radio frequency (RF) magnetron sputtered SiO₂ have been developed which is compatible to large-area electronics fabrication. In this work, fully transparent Indium-Gallium-Zinc-Oxide-based EDL TFTs on glass substrates have been fabricated at room temperature for the first time. A maximum transmittance of about 80% has been achieved in the visible light range. The transparent TFTs show a low operation voltage of 1.5 V due to the large EDL capacitance (0.3 µF/cm² at 20 Hz). The devices exhibit a good performance with a low subthreshold swing of 130 mV/dec and a high on-off ratio > 10⁵. Several tests have also been done to investigate the influences of light irradiation and bias stress. Our results suggest that such transistors might have potential applications in battery-powered transparent electron devices.

Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

DOE PAGES

Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; ...

2015-03-01

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

Multilayered Al/CuO thermite formation by reactive magnetron sputtering: Nano versus micro

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrantoni, M.; Rossi, C.; Salvagnac, L.

2010-10-15

Multilayered Al/CuO thermite was deposited by a dc reactive magnetron sputtering method. Pure Al and Cu targets were used in argon-oxygen gas mixture plasma and with an oxygen partial pressure of 0.13 Pa. The process was designed to produce low stress (<50 MPa) multilayered nanoenergetic material, each layer being in the range of tens nanometer to one micron. The reaction temperature and heat of reaction were measured using differential scanning calorimetry and thermal analysis to compare nanostructured layered materials to microstructured materials. For the nanostructured multilayers, all the energy is released before the Al melting point. In the case ofmore » the microstructured samples at least 2/3 of the energy is released at higher temperatures, between 1036 and 1356 K.« less

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jhanwar, Prachi, E-mail: prachijhanwar87@gmail.com; Department of Electronics, Banasthali University-304022, Rajasthan; Kumar, Arvind

2016-04-13

Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO{sub 2} surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm{sup 2}/V.s) asmore » compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).« less

Self-organization and self-limitation in high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, Andre

The plasma over the racetrack in high power impulse magnetron sputtering develops in traveling ionization zones. Power densities can locally reach 10{sup 9} W/m{sup 2}, which is much higher than usually reported. Ionization zones move because ions are 'evacuated' by the electric field, exposing neutrals to magnetically confined, drifting electrons. Drifting secondary electrons amplify ionization of the same ionization zone where the primary ions came from, while sputtered and outgassing atoms are supplied to the following zone(s). Strong density gradients parallel to the target disrupt electron confinement: a negative feedback mechanism that stabilizes ionization runaway.

In situ stress evolution during magnetron sputtering of transition metal nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abadias, G.; Guerin, Ph.

2008-09-15

Stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers was studied using real-time wafer curvature measurements. The presence of stress gradients is revealed, as the result of two kinetically competing stress generation mechanisms: atomic peening effect, inducing compressive stress, and void formation, leading to a tensile stress regime predominant at higher film thickness. No stress relaxation is detected during growth interrupt in both regimes. A change from compressive to tensile stress is evidenced with increasing film thickness, Ti content, sputtering pressure, and decreasing bias voltage.

Optical and electrical properties of p-type transparent conducting CuAlO2 thin film synthesized by reactive radio frequency magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Saha, B.; Thapa, R.; Jana, S.; Chattopadhyay, K. K.

2010-10-01

Thin films of p-type transparent conducting CuAlO2 have been synthesized through reactive radio frequency magnetron sputtering on silicon and glass substrates at substrate temperature 300°C. Reactive sputtering of a target fabricated from Cu and Al powder (1:1.5) was performed in Ar+O2 atmosphere. The deposition parameters were optimized to obtain phase pure, good quality CuAlO2 thin films. The films were characterized by studying their structural, morphological, optical and electrical properties.

Tunable Nitride Josephson Junctions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Missert, Nancy A.; Henry, Michael David; Lewis, Rupert M.

We have developed an ambient temperature, SiO 2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the Ta xN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlO x barriers for low - power, high - performance computing.

Structural and morphological study on ZnO:Al thin films grown using DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Astuti, B.; Sugianto; Mahmudah, S. N.; Zannah, R.; Putra, N. M. D.; Marwoto, P.; Aryanto, D.; Wibowo, E.

2018-03-01

ZnO doped Al (ZnO:Al ) thin film was deposited on corning glass substrate using DC magnetron sputtering method. Depositon process of the ZnO:Al thin films was kept constant at plasma power, deposition temperature and deposition time are 40 watt, 400°C and 2 hours, respectivelly. Furthermore, for annealing process has been done on the variation of oxygen pressure are 0, 50, and 100 mTorr. X-ray diffraction (XRD), and SEM was used to characterize ZnO:Al thin film was obtained. Based on XRD characterization results of the ZnO:Al thin film shows that deposited thin film has a hexagonal structure with the dominant diffraction peak at according to the orientation of the (002) plane and (101). Finally, the crystal structure of the ZnO:Al thin films that improves with an increasing the oxygen pressure at annealing process up to 100 mTorr and its revealed by narrow FWHM value and also with dense crystal structure.

Comparison of the Thermal Degradation of Heavily Nb-Doped and Normal PZT Thin Films.

PubMed

Yang, Jeong-Suong; Kang, YunSung; Kang, Inyoung; Lim, SeungMo; Shin, Seung-Joo; Lee, JungWon; Hur, Kang Heon

2017-03-01

The degradation of niobium-doped lead zirconate titanate (PZT) and two types of PZT thin films were investigated. Undoped PZT, two-step PZT, and heavily Nb-doped PZT (PNZT) around the morphotropic phase boundary were in situ deposited under optimum condition by RF-magnetron sputtering. All 2- [Formula: see text]-thick films had dense perovskite columnar grain structure and self-polarized (100) dominant orientation. PZT thin films were deposited on Pt/TiO x bottom electrode on Si wafer, and PNZT thin film was on Ir/TiW electrode with the help of orientation control. Sputtered PZT films formed on microelectromechanical system (MEMS) gyroscope and the degradation rates were compared at different temperatures. PNZT showed the best resistance to the thermal degradation, followed by two-step PZT. To clarify the effect of oxygen vacancies on the degradation of the film at high temperature, photoluminescence measurement was conducted, which confirmed that oxygen vacancy rate was the lowest in heavy PNZT. Nb-doping PZT thin films suppressed the oxygen deficit and made high imprint with self-polarization. This defect distribution and high internal field allowed PNZT thin film to make the piezoelectric sensors more stable and reliable at high temperature, such as reflow process of MEMS packaging.

Functionalization of Ti99.2 substrates surface by hybrid treatment investigated with spectroscopic methods

NASA Astrophysics Data System (ADS)

Jasinski, Jaroslaw Jan; Lubas, Malgorzata; Kurpaska, Lukasz; Napadlek, Wojciech; Sitarz, Maciej

2018-07-01

The article presents spectroscopic investigation of Ti 99.2 based functional substrates formed by hybrid oxidation process. Surface treatments were performed by combining methods of fluidized bed atmospheric diffusion treatment (FADT) with physical vapor deposition (PVD) - magnetron sputtering and laser surface texturing (LST) treatments. The processes were implemented to form a titanium diffusive layer saturated with oxygen in the substrate and a tight homogeneous oxide coating on Ti surface deposited with magnetron sputtering or laser texturing technique. The hybrid treatment was realized in Al2O3 fluidized bed reactor with air atmosphere, at 640 °C for 8 h and 12 h. At the same time, magnetron sputtering with the use of TiO2 target at a pressure of 3 × 102 mbar and laser surface texturing treatment with Nd:YAG λ = 1064 nm was performed. In order to investigate the effects of hybrid oxidation, microscopic (AFM, CLSM, SEM/SEM-EDX), spectroscopic (RS) and X-ray investigations (GID-XRD) were performed. Applied hybrid technique made possible to combine the effects of the generated layers and to reduce the stresses in the area of the PVD coating/oxidized Ti substrate interface. Furthermore, Raman spectroscopy results obtained at oxide layers manufactured with different variants of oxidation allowed detailed analysis of the created oxides. The coatings have shown structure with a Tiα(O) diffusion zone, a TiO2 rutile and anatase oxide zone deposited and textured on the substrate. Phase composition and morphology of these oxides is essential for the osseointegration process i.e. intensity of hydroxyapatite growing on the implant surface. Performed processes influenced the surface roughness parameter and cause the increase of substrate functional properties, which are important for biomedical applications.

Post-annealing-free, room temperature processed nanocrystalline indium tin oxide thin films for plastic electronics

NASA Astrophysics Data System (ADS)

Nyoung Jang, Jin; Jong Lee, You; Jang, YunSung; Yun, JangWon; Yi, Seungjun; Hong, MunPyo

2016-06-01

In this study, we confirm that bombardment by high energy negative oxygen ions (NOIs) is the key origin of electro-optical property degradations in indium tin oxide (ITO) thin films formed by conventional plasma sputtering processes. To minimize the bombardment effect of NOIs, which are generated on the surface of the ITO targets and accelerated by the cathode sheath potential on the magnetron sputter gun (MSG), we introduce a magnetic field shielded sputtering (MFSS) system composed of a permanent magnetic array between the MSG and the substrate holder to block the arrival of energetic NOIs. The MFSS processed ITO thin films reveal a novel nanocrystal imbedded polymorphous structure, and present not only superior electro-optical characteristics but also higher gas diffusion barrier properties. To the best of our knowledge, no gas diffusion barrier composed of a single inorganic thin film formed by conventional plasma sputtering processes achieves such a low moisture permeability.

An inverted cylindrical sputter magnetron as metal vapor supply for electron cyclotron resonance ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T.

2014-05-15

An inverted cylindrical sputter magnetron device has been developed. The magnetron is acting as a metal vapor supply for an electron cyclotron resonance (ECR) ion source. FEM simulation of magnetic flux density was used to ensure that there is no critical interaction between both magnetic fields of magnetron and ECR ion source. Spatially resolved double Langmuir probe and optical emission spectroscopy measurements show an increase in electron density by one order of magnitude from 1 × 10{sup 10} cm{sup −3} to 1 × 10{sup 11} cm{sup −3}, when the magnetron plasma is exposed to the magnetic mirror field of themore » ECR ion source. Electron density enhancement is also indicated by magnetron plasma emission photography with a CCD camera. Furthermore, photographs visualize the formation of a localized loss-cone - area, when the magnetron is operated at magnetic mirror field conditions. The inverted cylindrical magnetron supplies a metal atom load rate of R > 1 × 10{sup 18} atoms/s for aluminum, which meets the demand for the production of a milliampere Al{sup +} ion beam.« less

The Pulsed Cylindrical Magnetron for Deposition

NASA Astrophysics Data System (ADS)

Korenev, Sergey

2012-10-01

The magnetron sputtering deposition of films and coatings broadly uses in microelectronics, material science, environmental applications and etc. The rate of target evaporation and time for deposition of films and coatings depends on magnetic field. These parameters link with efficiency of gas molecules ionization by electrons. The cylindrical magnetrons use for deposition of films and coatings on inside of pipes for different protective films and coatings in oil, chemical, environmental applications. The classical forming of magnetic field by permanent magnets or coils for big and long cylindrical magnetrons is complicated. The new concept of pulsed cylindrical magnetron for high rate deposition of films and coating for big and long pipes is presented in this paper. The proposed cylindrical magnetron has azimuthally pulsed high magnetic field, which allows forming the high ionized plasma and receiving high rate of evaporation material of target (central electrode). The structure of proposed pulsed cylindrical magnetron sputtering system is given. The main requirements to deposition system are presented. The preliminary data for forming of plasma and deposition of Ta films and coatings on the metal pipers are discussed. The comparison of classical and proposed cylindrical magnetrons is given. The analysis of potential applications is considered.

Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

2017-09-01

In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

Fabrication of boron sputter targets

DOEpatents

Makowiecki, D.M.; McKernan, M.A.

1995-02-28

A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

Solid-solution CrCoCuFeNi high-entropy alloy thin films synthesized by sputter deposition

DOE PAGES

An, Zhinan; Jia, Haoling; Wu, Yueying; ...

2015-05-04

The concept of high configurational entropy requires that the high-entropy alloys (HEAs) yield single-phase solid solutions. However, phase separations are quite common in bulk HEAs. A five-element alloy, CrCoCuFeNi, was deposited via radio frequency magnetron sputtering and confirmed to be a single-phase solid solution through the high-energy synchrotron X-ray diffraction, energy-dispersive spectroscopy, wavelength-dispersive spectroscopy, and transmission electron microscopy. The formation of the solid-solution phase is presumed to be due to the high cooling rate of the sputter-deposition process.

Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com; State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001; Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com

2016-08-15

The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process wasmore » simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.« less

Boron ion beam generation utilizing lanthanum hexaboride cathodes: Comparison of vacuum arc and planar magnetron glow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikolaev, A. G.; Vizir, A. V.; Yushkov, G. Yu., E-mail: gyushkov@mail.ru

Boron ion beams are widely used for semiconductor ion implantation and for surface modification for improving the operating parameters and increasing the lifetime of machine parts and tools. For the latter application, the purity requirements of boron ion beams are not as stringent as for semiconductor technology, and a composite cathode of lanthanum hexaboride may be suitable for the production of boron ions. We have explored the use of two different approaches to boron plasma production: vacuum arc and planar high power impulse magnetron in self-sputtering mode. For the arc discharge, the boron plasma is generated at cathode spots, whereasmore » for the magnetron discharge, the main process is sputtering of cathode material. We present here the results of comparative test experiments for both kinds of discharge, aimed at determining the optimal discharge parameters for maximum yield of boron ions. For both discharges, the extracted ion beam current reaches hundreds of milliamps and the fraction of boron ions in the total extracted ion beam is as high as 80%.« less

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

A broadband permeability measurement of FeTaN lamination stack by the shorted microstrip line method

NASA Astrophysics Data System (ADS)

Chen, Xin; Ma, Yungui; Xu, Feng; Wang, Peng; Ong, C. K.

2009-01-01

In this paper, the microwave characteristics of a FeTaN lamination stack are studied with a shorted microstrip line method. The FeTaN lamination stack was fabricated by gluing 54 layers of FeTaN units with epoxy together. The FeTaN units were deposited on both sides of an 8 μm polyethylene terephthate (Mylar) film as the substrate by rf magnetron sputtering. On each side of the Mylar substrate, three 100-nm FeTaN layers are laminated with two 8 nm Al2O3 layers. The complex permeability of FeTaN lamination stack is calculated by the scattering parameters using the shorted load transmission line model based on the quasi-transverse-electromagnetic approximation. A full wave analysis combined with an optimization process is employed to determine the accurate effective permeability values. The optimized complex permeability data can be used for the microwave filter design.

Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature

NASA Astrophysics Data System (ADS)

Cong, Yingying; Han, Dedong; Wu, Jing; Zhao, Nannan; Chen, Zhuofa; Zhao, Feilong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi

2015-04-01

High-performance fully transparent Al-Sn-Zn-O thin-film transistors (ATZO TFTs) with excellent electrical performance have been successfully fabricated by RF magnetron sputtering on glass at low temperatures. Two kinds of appropriate ATZO compositions are compared from several perspectives, including film material characteristics, device electrical performances, and fabrication process conditions. Finally, we achieve two excellent ATZO TFTs with competitive advantages. The ATZO TFT with larger amounts of dopants exhibits a superior field effect mobility μFE of 102.38 cm2 V-1 s-1, an ON/OFF current ratio (Ion/Ioff) of 1.18 × 107, and a threshold voltage VT of 1.35 V. The device with smaller amounts of dopants demonstrates better crystal quality and an excellent subthreshold swing SS of 155 mV/dec. Furthermore, it is less affected by oxygen partial pressure. The ATZO thin films display a high transmittance of over 80% in the visible light range.

Magnetic and magneto-optical properties and domain structure of Co/Pd multilayers

NASA Technical Reports Server (NTRS)

Gadetsky, S.; Wu, Teho; Suzuki, T.; Mansuripur, M.

1993-01-01

The domain structure of Co/Pd(1.6/6.3 A)xN multilayers and its relation to the bulk magnetic properties of the samples were studied. The Co/Pd multilayers were deposited by rf and dc magnetron sputtering onto different substrates. It was found that magnetic and magnetooptical properties and domain structure of the multilayers were affected by total film thickness and substrate condition. Magnetization, coercivity, and anisotropy of the films decreased significantly as the film thickness dropped below 100 A. However, Kerr rotation angle had a maximum at the same thickness. The width of the domain structure increased with the decrease of the film thickness attaining the single domain state at N = 10. The initial curves in Co/Pd multilayers were found to depend on demagnetization process. The samples demagnetized by inplane field showed the largest difference between initial curves and the corresponding parts of the loops. Different domain structures were observed in the samples demagnetized by perpendicular and in-plane magnetic fields.

Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

NASA Astrophysics Data System (ADS)

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

2018-02-01

In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6 μm and 12 μm). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33 V, sub-threshold swings of 13.5 & 12.8 V/dec for channel lengths of 6 μm and 12 μm TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.

Flexoelectricity in barium strontium titanate thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo

2014-10-06

Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. Themore » measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.« less

As(III) Removal from Drinking Water by Carbon Nanotube Membranes with Magnetron-Sputtered Copper: Performance and Mechanisms.

PubMed

Luan, Hongyan; Zhang, Quan; Cheng, Guo-An; Huang, Haiou

2018-06-20

Current approaches for functionalizing carbon nanotubes (CNTs) often utilize harsh chemical conditions, and the resulting harmful wastes can cause various environmental and health concerns. In this study, magnetron sputtering technique is facilely employed to functionalize CNT membranes by depositing Cu onto premade CNT membranes without using any chemical treatment. A comparative evaluation of the substrate polymeric membrane (mixed cellulose ester (MCE)), MCE sputtered with copper (Cu/MCE), the pristine CNT membrane (CNT), and CNT membrane sputtered with Cu (Cu/CNT) shows that Cu/CNT possesses mechanically stable structures and similar membrane permeability as MCE. More importantly, Cu/CNT outperforms other membranes with high As(III) removal efficiency of above 90%, as compared to less than 10% by MCE and CNT, and 75% by Cu/MCE from water. The performance of Cu/CNT membranes for As(III) removal is also investigated as a function of ionic strength, sputtering time, co-existing ions, solution pH, and the reusability. Further characterizations of As speciation in the filtrate and on Cu/CNT reveal that arsenite removal by Cu/CNT possibly began with Cu-catalyzed oxidation of arsenite to arsenate, followed by adsorptive filtration of arsenate by the membrane. Overall, this study demonstrates that magnetron sputtering is a promising greener technology for the productions of metal-CNT composite membranes for environmental applications.

The properties of RE-TM magneto-optical films

NASA Astrophysics Data System (ADS)

Lee, Z. Y.; Miao, X. S.; Zhu, P.; Hu, Y. S.; Wan, D. F.; Dai, D. W.; Chen, S. B.; Lin, G. Q.

1992-09-01

In this paper, the magnetic, magneto-optical and galvonomagnetic properties, and their temperature dependence for LRE-TM SmCo, SmCoDy and HRE-TM TbFeCo magneto-optical films as high density recording media prepared by rf magnetron sputtering or evaporation are reported. By adding Dy to SmCo thin film, the SmCoDy thin film is more suitable for magneto-optical recording, its domain size being below 0.63 μm. The Kerr enhancement and corrosion protective effects of AIN and AlSiN for optimum design of the multi-layer structure of magneto-optical disk are described. The instruments of measuring the magneto-optical Kerr effect and magneto-optical recording domain characteristics of thin films are reviewed.

Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

NASA Astrophysics Data System (ADS)

Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

2018-04-01

TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

Mechanical Properties of TiTaHfNbZr High-Entropy Alloy Coatings Deposited on NiTi Shape Memory Alloy Substrates

NASA Astrophysics Data System (ADS)

Motallebzadeh, A.; Yagci, M. B.; Bedir, E.; Aksoy, C. B.; Canadinc, D.

2018-06-01

TiTaHfNbZr high-entropy alloy (HEA) thin films with thicknesses of about 750 and 1500 nm were deposited on NiTi substrates by RF magnetron sputtering using TiTaHfNbZr equimolar targets. The thorough experimental analysis on microstructure and mechanical properties of deposited films revealed that the TiTaHfNbZr films exhibited amorphous and cauliflower-like structure, where grain size and surface roughness increased concomitant with film thickness. More importantly, the current findings demonstrate that the TiTaHfNbZr HEA films with mechanical properties of the same order as those of the NiTi substrate constitute promising biomedical coatings effective in preventing Ni release.

[Effects of magnetron sputtered ZrN on the bonding strength of titanium porcelain].

PubMed

Zhou, Shu; Zhang, Wen-yan; Guang, Han-bing; Xia, Yang; Zhang, Fei-min

2009-04-01

To investigate the effect of magnetron sputtered ZrN on the bonding strength between a low-fusing porcelain (Ti/Vita titankeramik system) and commercially pure cast titanium. Sixteen specimens were randomly assigned to test group and control group (n=8). The control group received no surface treated. Magnetron sputtered ZrN film was deposited on the surface of specimens in the test group. Then the sixteen titanium-porcelain specimens were prepared in a rectangular shape and went through three-point bending test on a universal test machine. The bond strength of Ti/porcelain was recorded. The phase composition of the specimens was analyzed using X-ray diffraction (XRD). The interface at titanium and porcelain and the titanium surface after debonding were observed with a scanning electron microscopy (SEM) and analyzed using energy depressive spectrum (EDS). New phase of ZrN was found with XRD in the test group. Statistical analysis showed higher bond strength following ZrN surface treatment in the test group [(45.991+/-0.648) MPa] than that in the control group [(29.483+/-1.007) MPa] (P=0.000). Bonded ceramic could be observed in test group, the amount of bonded ceramic was more than that in the control group. No obvious bonded ceramic in control group was found. Magnetron sputtered ZrN can improve bond strength of Ti/Vita titankeramik system significantly.

Sb-Te alloy nanostructures produced on a graphite surface by a simple annealing process

NASA Astrophysics Data System (ADS)

Kuwahara, Masashi; Uratsuji, Hideaki; Abe, Maho; Sone, Hayato; Hosaka, Sumio; Sakai, Joe; Uehara, Yoichi; Endo, Rie; Tsuruoka, Tohru

2015-08-01

We have produced Sb-Te alloy nanostructures from a thin Sb2Te3 layer deposited on a highly oriented pyrolytic graphite substrate using a simple rf-magnetron sputtering and annealing technique. The size, shape, and chemical composition of the structures were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray spectrometry (EDX), respectively. The shape of the nanostructures was found to depend on the annealing temperature; nanoparticles appear on the substrate by annealing at 200 °C, while nanoneedles are formed at higher temperatures. Chemical composition analysis has revealed that all the structures were in the composition of Sb:Te = 1:3, Te rich compared to the target composition Sb2Te3, probably due to the higher movability of Te atoms on the substrate compared with Sb. We also tried to observe the production process of nanostructures in situ using SEM. Unfortunately, this was not possible because of evaporation in vacuum, suggesting that the formation of nanostructures is highly sensitive to the ambient pressure.

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

PubMed

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Effect of O 2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO 2 thin films

NASA Astrophysics Data System (ADS)

Ma, C. Y.; Lapostolle, F.; Briois, P.; Zhang, Q. Y.

2007-08-01

Amorphous and polycrystalline zirconium oxide thin films have been deposited by reactive rf magnetron sputtering in a mixed argon/oxygen or pure oxygen atmosphere with no intentional heating of the substrate. The films were characterized by high-resolution transmission electron microscopy (HR-TEM), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and capacitance versus voltage ( C- V) measurements to investigate the variation of structure, surface morphology, thickness of SiO 2-like interfacial layer as well as dielectric characteristics with different oxygen partial pressures. The films deposited at low oxygen partial pressures (less than 15%) are amorphous and dense with a smooth surface. In contrast, the films prepared at an oxygen partial pressure higher than 73% are crystallized with the microstructure changing from the mixture of monoclinic and tetragonal phases to a single monoclinic structure. The film structural transition is believed to be consequences of decrease in the oxygen vacancy concentration in the film and of increase of the energetically neutral particles in the plasma due to an increased oxygen partial pressure. SE measurements showed that significant interfacial SiO 2 growth has taken place above approximately 51%. The best C- V results in terms of relative dielectric constant values are obtained for thin films prepared at an oxygen partial pressure of 15%.

Effect of Mg doping in the gas-sensing performance of RF-sputtered ZnO thin films

NASA Astrophysics Data System (ADS)

Vinoth, E.; Gowrishankar, S.; Gopalakrishnan, N.

2018-06-01

Thin films of Mg-free and Mg-doped (3, 10 and 20 mol%) ZnO thin films have been deposited on Si (100) substrates by RF magnetron sputtering for gas-sensing application. Preferential orientation along (002) plane with hexagonal wurtzite structure has been observed in X-ray diffraction analysis. The conductivity, resistivity, and mobility of the deposited films have been measured by Hall effect measurement. The bandgap of the films has been calculated from the UV-Vis-NIR spectroscopy. It has been found that the bandgap was increased from 3.35 to 3.91 eV with Mg content in ZnO due to the radiative recombination of excitons. The change in morphology of the grown films has been investigated by scanning electron microscope. Gas-sensing measurements have been conducted for fabricated films. The sensor response, selectivity, and stability measurement were done for the fabricated films. Though better response was found towards ethanol, methanol, and ammonia for MZ2 (Mg at 10 mol%) film and maximum gas response was observed towards ammonia. The selectivity measurement reveals maximum sensitivity about 42% for ammonia. The low response time of 123 s and recovery time of 152 s towards ammonia were observed for MZ2 (Mg at 10 mol%). Stability of the Mg-doped ZnO thin film confirmed by the continuous sensing measurements for 4 months.

The structure and properties of pulsed dc magnetron sputtered nanocrystalline TiN films for electrodes of alkali metal thermal-to-electric conversion systems.

PubMed

Chun, Sung-Yong

2013-03-01

Titanium nitride films used as an important electrode material for the design of alkali metal thermal-to-electric conversion (AMTEC) system have been prepared using dc (direct current) and asymmetric-bipolar pulsed dc magnetron sputtering. The pulse frequency and the duty cycle were varied from 5 to 50 kHz and 50 to 95%, respectively. The deposition rate, grain size and resistivity of pulsed dc sputtered films were decreased when the pulse frequency increased, while the nano hardness of titanium nitride films increased. We present in detail coatings (e.g., deposition rate, grain size, prefer-orientation, resistivity and hardness). Our studies show that titanium nitride coatings with superior properties can be prepared using asymmetric-bipolar pulsed dc sputtering.

[Effect of vacuum deposition technology on the metal-porcelain bond strength of a new type of CO-CR ceramic and framework dental alloy].

PubMed

Wu, Jun-ling; Chao, Yong-lie; Ji, Ping; Gao, Xu

2007-10-01

To investigate the effect of a new engineering technique of vacuum deposition-plasma magnetron reactive sputter deposition technique on the metal-porcelain bond strength of a new type of Co-Cr ceramic and framework dental alloy. Before porcelain painted on the specimens, the standardized metal strips made from DA9-4 dental alloy were coated with a thin Al2O3 ceramic film by plasma magnetron reactive sputter deposition technique. The conformation, structure and thickness of the ceramic film were analyzed. The specimens for three-point bending test made from DA9-4 alloy and VMK95 porcelain were used for metal-porcelain bond strength measurement, in the same time the interface of metal-porcelain and element distribution were also observed. The flexural bonding strength of metal-porcelain of sputtering group and control group were (180.55+/-16.45) MPa and (143.80+/-24.49) MPa. The flexural bonding strength of metal-porcelain of sputtering group was higher than control group significantly through statistical analysis (P<0.01). The plasma magnetron reactive sputter deposition technique has a positive effect in improving the bonding strength of DA9-4 dental alloy and ceramic.

Effect of post-annealing on sputtered MoS2 films

NASA Astrophysics Data System (ADS)

Wong, W. C.; Ng, S. M.; Wong, H. F.; Cheng, W. F.; Mak, C. L.; Leung, C. W.

2017-12-01

Typical routes for fabricating MoS2-based electronic devices rely on the transfer of as-prepared flakes to target substrates, which is incompatible with conventional device fabrication methods. In this work we investigated the preparation of MoS2 films by magnetron sputtering. By subjecting room-temperature sputtered MoS2 films to post-annealing at mild conditions (450 °C in a nitrogen flow), crystalline MoS2 films were formed. To demonstrate the compatibility of the technique with typical device fabrication processes, MoS2 was prepared on epitaxial magnetic oxide films of La0.7Sr0.3MnO3, and the magnetic behavior of the films were unaffected by the post-annealing process. This work demonstrates the possibility of fabricating electronic and spintronic devices based on continuous MoS2 films prepared by sputtering deposition.

High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehiasarian, A. P.; New, R.; Hecimovic, A.

We report on instabilities in high power impulse magnetron sputtering plasmas which are likely to be of the generalized drift wave type. They are characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron and cause periodic shifts in floating potential. The azimuthal mode number m depends on plasma current, plasma density, and gas pressure. The structures rotate in E-vectorxB-vector direction at velocities of {approx}10 km s{sup -1} and frequencies up to 200 kHz. Collisions with residual gas atoms slow down the rotating wave, whereas increasing ionization degree of the gas and plasmamore » conductivity speeds it up.« less

Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazadevich, G.; Johnson, R.; Neubauer, M.

Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verifiedmore » with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.« less

Formation of pyrite (FeS{sub 2}) thin films by thermal sulfurization of dc magnetron sputtered iron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soukup, R. J.; Prabukanthan, P.; Ianno, N. J.

2011-01-15

Iron films deposited by direct current magnetron sputtering onto glass substrates were converted into FeS{sub 2} films by thermal sulfurization. Experiments were carried out to optimize the sulfurization process, and the formation of FeS{sub 2} thin films was investigated under different annealing temperatures and times. High quality FeS{sub 2} films were fabricated using this process, and single phase pyrite films were obtained after sulfurization in a sulfur and nitrogen atmosphere at 450 deg. C for 1 h. Film crystallinity and phase identification were determined by using x-ray diffraction. The cubic phase pyrite films prepared were p-type, and scanning electron microscopymore » studies exhibited a homogeneous surface of pyrite. The authors have found that the best Ohmic contact for their pyrite thin films, using inexpensive metals, was Ni. The following were chosen for the study: Al, Mo, Fe, and Ni, and the one that led to the lowest resistance, 333 {Omega}, was Ni.« less

Noncontact measurement of substrate temperature by optical low-coherence interferometry in high-power pulsed magnetron sputtering

NASA Astrophysics Data System (ADS)

Hattori, Katsuhiro; Ohta, Takayuki; Oda, Akinori; Kousaka, Hiroyuki

2018-01-01

Substrate temperature is one of the important parameters that affect the quality of deposited films. The monitoring of the substrate temperature is an important technique of controlling the deposition process precisely. In this study, the Si substrate temperature in high-power pulse magnetron sputtering (HPPMS) was measured by a noncontact method based on optical low-coherence interferometry (LCI). The measurement was simultaneously performed using an LCI system and a thermocouple (TC) as a contact measurement method. The difference in measured value between the LCI system and the TC was about 7.4 °C. The reproducibilities of measurement for the LCI system and TC were ±0.7 and ±2.0 °C, respectively. The heat influx from the plasma to the substrate was estimated using the temporal variation of substrate temperature and increased from 19.7 to 160.0 mW/cm2 with increasing target applied voltage. The major factor for the enhancement of the heat influx would be charged species such as ions and electrons owing to the high ionization degree of sputtered metal particles in HPPMS.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Effect of structure and deposition technology on tribological properties of DLC coatings alloyed with VIA group metals

NASA Astrophysics Data System (ADS)

Khrushchov, M.; Levin, I.; Marchenko, E.; Avdyukhina, V.; Petrzhik, M.

2016-07-01

The results of a comprehensive research on atomic structure, phase composition, micromechanical and tribological characteristics of alloyed DLC coatings have been presented. The coatings have been deposited by reactive magnetron sputtering in acetylene-nitrogen gas mixtures of different compositions (a-C:H:Cr), by plasma-assisted chemical vapor deposition in atmospheres of silicone-organic precursor gases (a-C:H:Mo:Si), and by nonreactive magnetron sputtering of a composite target (a-C:H:W).

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

NASA Astrophysics Data System (ADS)

Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

2016-06-01

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Fabrication and Characterization of CZTS Thin Films Prepared by the Sulfurization of RF-Sputtered Stacked Metal Precursors

NASA Astrophysics Data System (ADS)

Abusnina, Mohamed; Moutinho, Helio; Al-Jassim, Mowafak; DeHart, Clay; Matin, Mohammed

2014-09-01

In this work, Cu2ZnSnS4 (CZTS) thin films were prepared by the sulfurization of metal precursors deposited sequentially via radio frequency magnetron sputtering on Mo-coated soda-lime glass. The stack order of the precursors was Mo/Zn/Sn/Cu. Sputtered precursors were annealed in sulfur atmosphere with nine different conditions to study the impact of sulfurization time and substrate temperature on the structural, morphological, and optical properties of the final CZTS films. X-ray fluorescence was used to determine the elemental composition ratio of the metal precursors. Final CZTS films were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive spectroscopy (EDS). XRD and EDS were combined to investigate the films' structure and to identify the presence of secondary phases. XRD analysis indicated an improvement in film crystallinity with an increase of the substrate temperature and annealing times. Also indicated was the minimization and/or elimination of secondary phases when the films experienced longer annealing time. EDS revealed slight Sn loss in films sulfurized at 550°C; however, an increase of the sulfurization temperature to 600°C did not confirm these results. SEM study showed that films treated with higher temperatures exhibited dense morphology, indicating the completion of the sulfurization process. The estimated absorption coefficient was on the order of 104 cm-1 for all CZTS films, and the values obtained for the optical bandgap energy of the films were between 1.33 eV and 1.52 eV.

Characteristic of Nano-Cu Film Prepared by Energy Filtrating Magnetron Sputtering Technique and Its Optical Property

NASA Astrophysics Data System (ADS)

Wang, Zhaoyong; Hu, Xing; Yao, Ning

2015-03-01

At the optimized deposition parameters, Cu film was deposited by the direct current magnetron sputtering (DMS) technique and the energy filtrating magnetron sputtering (EFMS) technique. The nano-structure was charactered by x-ray diffraction. The surface morphology of the film was observed by atomic force microscopy. The optical properties of the film were measured by spectroscopic ellipsometry. The refractive index, extinction coefficient and the thickness of the film were obtained by the fitted spectroscopic ellipsometry data using the Drude-Lorentz oscillator optical model. Results suggested that a Cu film with different properties was fabricated by the EFMS technique. The film containing smaller particles is denser and the surface is smoother. The average transmission coefficient, the refractive index and the extinction coefficients are higher than those of the Cu film deposited by the DMS technique. The average transmission coefficient (400-800 nm) is more than three times higher. The refractive index and extinction coefficient (at 550 nm) are more than 36% and 14% higher, respectively.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, D.B.; Wiley, J.D.

1989-09-12

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness. 5 figs.

Magnetron with flux switching cathode and method of operation

DOEpatents

Aaron, David B.; Wiley, John D.

1989-01-01

A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

Particle-in-cell/Monte Carlo collisions treatment of an Ar/O2 magnetron discharge used for the reactive sputter deposition of TiOx films

NASA Astrophysics Data System (ADS)

Bultinck, E.; Bogaerts, A.

2009-10-01

The physical processes in an Ar/O2 magnetron discharge used for the reactive sputter deposition of TiOx thin films were simulated with a 2d3v particle-in-cell/Monte Carlo collisions (PIC/MCC) model. The plasma species taken into account are electrons, Ar+ ions, fast Arf atoms, metastable Arm* atoms, Ti+ ions, Ti atoms, O+ ions, O2+ ions, O- ions and O atoms. This model accounts for plasma-target interactions, such as secondary electron emission and target sputtering, and the effects of target poisoning. Furthermore, the deposition process is described by an analytical surface model. The influence of the O2/Ar gas ratio on the plasma potential and on the species densities and fluxes is investigated. Among others, it is shown that a higher O2 pressure causes the region of positive plasma potential and the O- density to be more spread, and the latter to decrease. On the other hand, the deposition rates of Ti and O are not much affected by the O2/Ar proportion. Indeed, the predicted stoichiometry of the deposited TiOx film approaches x=2 for nearly all the investigated O2/Ar proportions.

Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

NASA Astrophysics Data System (ADS)

Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

2000-01-01

Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

Study on the Structural, Morphological and Optical Properties of RF-Sputtered Dysprosium-Doped Barium Tungstate Thin Films

NASA Astrophysics Data System (ADS)

Hridya, S.; Kavitha, V. S.; Chalana, S. R.; Reshmi Krishnan, R.; Sreeja Sreedharan, R.; Suresh, S.; Nampoori, V. P. N.; Sankararaman, S.; Prabhu, Radhakrishna; Mahadevan Pillai, V. P.

2017-11-01

Barium tungstate films with different Dy3+ doping concentrations, namely 0 wt.%, 1 wt.%, 3 wt.% and 5 wt.%, are deposited on cleaned quartz substrate by radio frequency magnetron sputtering technique and the prepared films are annealed at a temperature of 700°C. The structural, morphological and optical properties of the annealed films are studied using techniques such as x-ray diffraction (XRD), micro-Raman spectroscopy, field emission scanning electron microscopy, atomic force microscopy and photoluminescence spectroscopy. XRD analysis shows that all the films are well-crystallized in nature with a monoclinic barium tungstate phase. The presence of characteristic modes of the tungstate group in the Raman spectra supports the formation of the barium tungstate phase in the films. Scanning electron microscopic images of the films present a uniform dense distribution of well-defined grains with different sizes. All the doped films present a broad emission in the 390-500 nm region and its intensity increases up to 3 wt.% and thereafter decreases due to usual concentration quenching.

Excitons emissions and Raman scattering of ZnO nanoparticles embedded in BaF2 matrices by reactive magnetron sputtering.

PubMed

Zang, C H; Su, J F; Liu, Y C; Tang, C J; Fang, S J; Zhang, D M; Zhang, Y S

2011-11-01

ZnO nanoparticles embedded in BaF2 matrix were fabricated by rf magnetic sputtering technology. The optical properties of high quality ZnO nanoparticles, thermally post treated in a N2 atmosphere, were investigated by temperature-dependence photoluminescence measurement. Free exciton and localized exciton were observed at the low temperature. Free exciton peak was at 3.374 eV and localized exciton peak was at 3.420 eV, dominating the PL spectrum at 77 K. Free exciton transition was observed at 3.310 eV at room temperature, whereas the localized exciton transition was at 3.378 eV. The multiple-phonon Raman scattering spectrum showed that ZnO nanoparticles embedded in BaF2 matrix had a large deformation energy originated from lattice mismatch between ZnO and BaF2 matrix. Analysis of the fitting results from the temperature dependence of FWHM of ZnO exciton illustrated that the large value of gamma(ph) was good qualitative agreement with the large deformation potential.

Nanoscale Investigation of Grain Growth in RF-Sputtered Indium Tin Oxide Thin Films by Scanning Probe Microscopy

NASA Astrophysics Data System (ADS)

Lamsal, B. S.; Dubey, M.; Swaminathan, V.; Huh, Y.; Galipeau, D.; Qiao, Q.; Fan, Q. H.

2014-11-01

This work studied the electronic characteristics of the grains and grain boundaries of indium tin oxide (ITO) thin films using electrostatic and Kelvin probe force microscopy. Two types of ITO films were compared, deposited using radiofrequency magnetron sputtering in pure argon or 99% argon + 1% oxygen, respectively. The average grain size and surface roughness increased with substrate temperature for the films deposited in pure argon. With the addition of 1% oxygen, the increase in the grain size was inhibited above 150°C, which was suggested to be due to passivation of the grains by the excess oxygen. Electrostatic force microscopy and Kelvin probe force microscopy (KPFM) images confirmed that the grain growth was defect mediated and occurred at defective interfaces at high temperatures. Films deposited at room temperature with 1% oxygen showed crystalline nature, while films deposited with pure argon at room temperature were amorphous as observed from KPFM images. The potential drop across the grain and grain boundary was determined by taking surface potential line profiles to evaluate the electronic properties.

Reactive sputtering of δ-ZrH{sub 2} thin films by high power impulse magnetron sputtering and direct current magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Högberg, Hans, E-mail: hans.hogberg@liu.se; Tengdelius, Lina; Eriksson, Fredrik

2014-07-01

Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{submore » 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.« less

Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hershcovitch, A., E-mail: hershcovitch@bnl.gov; Blaskiewicz, M.; Brennan, J. M.

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made,more » with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.« less

Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

NASA Astrophysics Data System (ADS)

Hershcovitch, Ady

2014-10-01

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the US Department of Energy.

Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubesa)

NASA Astrophysics Data System (ADS)

Hershcovitch, A.; Blaskiewicz, M.; Brennan, J. M.; Custer, A.; Dingus, A.; Erickson, M.; Fischer, W.; Jamshidi, N.; Laping, R.; Liaw, C.-J.; Meng, W.; Poole, H. J.; Todd, R.

2015-05-01

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

Foundations of DC plasma sources

NASA Astrophysics Data System (ADS)

Tomas Gudmundsson, Jon; Hecimovic, Ante

2017-12-01

A typical dc discharge is configured with the negative cathode at one end and a positive anode at the other end, separated by a gas filled gap, placed inside a long glass cylinder. A few hundred volts between the cathode and anode is required to maintain the discharge. The type of discharge that is formed between the two electrodes depends upon the pressure of the working gas, the nature of the working gas, the applied voltage and the geometry of the discharge. We discuss the current-voltage characteristics of the discharge as well as the distinct structure that develops in the glow discharge region. The dc glow discharge appears in the discharge current range from μA to mA at 0.5-300 Pa pressure. We discuss the various phenomena observed in the dc glow discharge, including the cathode region, the positive column, and striations. The dc glow discharge is maintained by the emission of secondary electrons from the cathode target due to the bombardment of ions. For decades, the dc glow discharge has been used as a sputter source. Then it is often operated as an obstructed abnormal glow discharge and the required applied voltage is in the range 2-5 kV. Typically, the cathode target (the material to be deposited) is connected to a negative voltage supply (dc or rf) and the substrate holder faces the target. The relatively high operating pressure, in the range from 2 to 4 Pa, high applied voltages, and the necessity to have a conductive target limit the application of dc glow discharge as a sputter source. In order to lower the discharge voltage and expand the operation pressure range, the lifetime of the electrons in target vicinity is increased through applying magnetic field, by adding permanent magnets behind the cathode target. This arrangement is coined the magnetron sputtering discharge. The various configurations of the magnetron sputtering discharge and its applications are described. Furthermore, the use of dc discharges for chemical analysis, the Penning discharge and the hollow cathode discharges and some of its applications are briefly discussed.

A Magnetron Sputter Deposition System for the Development of Multilayer X-Ray Optics

NASA Technical Reports Server (NTRS)

Broadway, David; Ramsey, Brian; Gubarev, Mikhail

2014-01-01

The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.

A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

NASA Technical Reports Server (NTRS)

Broadway, David

2015-01-01

The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

Full-Process Computer Model of Magnetron Sputter, Part I: Test Existing State-of-Art Components

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walton, C C; Gilmer, G H; Wemhoff, A P

2007-09-26

This work is part of a larger project to develop a modeling capability for magnetron sputter deposition. The process is divided into four steps: plasma transport, target sputter, neutral gas and sputtered atom transport, and film growth, shown schematically in Fig. 1. Each of these is simulated separately in this Part 1 of the project, which is jointly funded between CMLS and Engineering. The Engineering portion is the plasma modeling, in step 1. The plasma modeling was performed using the Object-Oriented Particle-In-Cell code (OOPIC) from UC Berkeley [1]. Figure 2 shows the electron density in the simulated region, using magneticmore » field strength input from experiments by Bohlmark [2], where a scale of 1% is used. Figures 3 and 4 depict the magnetic field components that were generated using two-dimensional linear interpolation of Bohlmark's experimental data. The goal of the overall modeling tool is to understand, and later predict, relationships between parameters of film deposition we can change (such as gas pressure, gun voltage, and target-substrate distance) and key properties of the results (such as film stress, density, and stoichiometry.) The simulation must use existing codes, either open-source or low-cost, not develop new codes. In part 1 (FY07) we identified and tested the best available code for each process step, then determined if it can cover the size and time scales we need in reasonable computation times. We also had to determine if the process steps are sufficiently decoupled that they can be treated separately, and identify any research-level issues preventing practical use of these codes. Part 2 will consider whether the codes can be (or need to be) made to talk to each other and integrated into a whole.« less

Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

2015-04-01

In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

NASA Astrophysics Data System (ADS)

Ilahi, B.; Abdel-Rahman, M.; Zaaboub, Z.; Zia, M. F.; Alduraibi, M.; Maaref, H.

2016-09-01

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400∘C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O13 and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

AFRL Projects to Replace Cadmium

DTIC Science & Technology

2005-03-01

Protocol does not – Identify/ select a material or process – Impose processing restrictions on candidates – Implement a material or process into production...within proper limits • Use XRF to measure composition and thickness – Strippability • Remove coating within 60 minutes • Replate coating and pass...product information available? Magnetron Sputtering to Replace Cd • Task 2: Coating Deposition and Screening – Selection of qualified vendors and

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

NASA Astrophysics Data System (ADS)

Panda, Padmalochan; Ramaseshan, R.; Krishna, Nanda Gopala; Dash, S.

2016-05-01

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N2 concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (HIT) of around 28.2 GPa for a nitrogen concentration of 25%.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S.

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

A novel injection-locked amplitude-modulated magnetron at 1497 MHz

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neubauer, Michael; Wang, Haipeng

2015-12-15

Thomas Jefferson National Accelerator Facility (JLab) uses low efficiency klystrons in the CEBAF machine. In the older portion they operate at 30% efficiency with a tube mean time between failure (MTBF) of five to six years. A highly efficient source (>55-60%) must provide a high degree of backwards compatibility, both in size and voltage requirements, to replace the klystron presently used at JLab, while providing energy savings. Muons, Inc. is developing a highly reliable, highly efficient RF source based upon a novel injection-locked amplitude modulated (AM) magnetron with a lower total cost of ownership, >80% efficiency, and MTBF of sixmore » to seven years. The design of the RF source is based upon a single injection-locked magnetron system at 8 kW capable of operating up to 13 kW, using the magnetron magnetic field to achieve the AM required for backwards compatibility to compensate for microphonics and beam loads. A novel injection-locked 1497 MHz 8 kW AM magnetron with a trim magnetic coil was designed and its operation numerically simulated during the Phase I project. The low-level RF system to control the trim field and magnetron anode voltage was designed and modeled for operation at the modulation frequencies of the microphonics. A plan for constructing a prototype magnetron and control system was developed.« less

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

NASA Astrophysics Data System (ADS)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon coating to increase the durability of contacting surfaces under boundary lubrication were studied. The performance of highly hydrogenated Diamond Like Carbon (DLC) was evaluated in a mixed sliding and rolling contact. Experimental results show significant improvement in fatigue life of steel specimens after coating with a highly hydrogenated Diamond Like Carbon coating. The improved fatigue life is attributed to the coating microstructure and the mechanical properties.

Particle visualization in high-power impulse magnetron sputtering. I. 2D density mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Britun, Nikolay, E-mail: nikolay.britun@umons.ac.be; Palmucci, Maria; Konstantinidis, Stephanos

2015-04-28

Time-resolved characterization of an Ar-Ti high-power impulse magnetron sputtering discharge has been performed. This paper deals with two-dimensional density mapping in the discharge volume obtained by laser-induced fluorescence imaging. The time-resolved density evolution of Ti neutrals, singly ionized Ti atoms (Ti{sup +}), and Ar metastable atoms (Ar{sup met}) in the area above the sputtered cathode is mapped for the first time in this type of discharges. The energetic characteristics of the discharge species are additionally studied by Doppler-shift laser-induced fluorescence imaging. The questions related to the propagation of both the neutral and ionized discharge particles, as well as to theirmore » spatial density distributions, are discussed.« less

Modelling of the reactive sputtering process with non-uniform discharge current density and different temperature conditions

NASA Astrophysics Data System (ADS)

Vašina, P; Hytková, T; Eliáš, M

2009-05-01

The majority of current models of the reactive magnetron sputtering assume a uniform shape of the discharge current density and the same temperature near the target and the substrate. However, in the real experimental set-up, the presence of the magnetic field causes high density plasma to form in front of the cathode in the shape of a toroid. Consequently, the discharge current density is laterally non-uniform. In addition to this, the heating of the background gas by sputtered particles, which is usually referred to as the gas rarefaction, plays an important role. This paper presents an extended model of the reactive magnetron sputtering that assumes the non-uniform discharge current density and which accommodates the gas rarefaction effect. It is devoted mainly to the study of the behaviour of the reactive sputtering rather that to the prediction of the coating properties. Outputs of this model are compared with those that assume uniform discharge current density and uniform temperature profile in the deposition chamber. Particular attention is paid to the modelling of the radial variation of the target composition near transitions from the metallic to the compound mode and vice versa. A study of the target utilization in the metallic and compound mode is performed for two different discharge current density profiles corresponding to typical two pole and multipole magnetics available on the market now. Different shapes of the discharge current density were tested. Finally, hysteresis curves are plotted for various temperature conditions in the reactor.

Plasma diagnostics of low pressure high power impulse magnetron sputtering assisted by electron cyclotron wave resonance plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stranak, Vitezslav; University of South Bohemia, Institute of Physics and Biophysics, Branisovska 31, 370 05 Ceske Budejovice; Herrendorf, Ann-Pierra

2012-11-01

This paper reports on an investigation of the hybrid pulsed sputtering source based on the combination of electron cyclotron wave resonance (ECWR) inductively coupled plasma and high power impulse magnetron sputtering (HiPIMS) of a Ti target. The plasma source, operated in an Ar atmosphere at a very low pressure of 0.03 Pa, provides plasma where the major fraction of sputtered particles is ionized. It was found that ECWR assistance increases the electron temperature during the HiPIMS pulse. The discharge current and electron density can achieve their stable maximum 10 {mu}s after the onset of the HiPIMS pulse. Further, a highmore » concentration of double charged Ti{sup ++} with energies of up to 160 eV was detected. All of these facts were verified experimentally by time-resolved emission spectroscopy, retarding field analyzer measurement, Langmuir probe, and energy-resolved mass spectrometry.« less

Co-sputtered amorphous Ge-Sb-Se thin films: optical properties and structure

NASA Astrophysics Data System (ADS)

Halenkovič, Tomáš; Němec, Petr; Gutwirth, Jan; Baudet, Emeline; Specht, Marion; Gueguen, Yann; Sangleboeuf, J.-C.; Nazabal, Virginie

2017-05-01

The unique properties of amorphous chalcogenides such as wide transparency in the infrared region, low phonon energy, photosensitivity and high linear and nonlinear refractive index, make them prospective materials for photonics devices. The important question is whether the chalcogenides are stable enough or how the photosensitivity could be exacerbated for demanded applications. Of this view, the Ge-Sb-Se system is undoubtedly an interesting glassy system given the antinomic behavior of germanium and antimony with respect to photosensitivity. The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. Radio-frequency sputtering is widely used for film fabrication due to its relative simplicity, easy control, and often stoichiometric material transfer from target to substrate. The advantage of this technique is the ability to explore a wide range of chalcogenide film composition by means of adjusting the contribution of each target. This makes the technique considerably effective for the exploration of properties mentioned above. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy Egopt was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy. The films structure was determined using Raman scattering spectroscopy.

Oxygen partial pressure effects on the RF sputtered p-type NiO hydrogen gas sensors

NASA Astrophysics Data System (ADS)

Turgut, Erdal; Çoban, Ömer; Sarıtaş, Sevda; Tüzemen, Sebahattin; Yıldırım, Muhammet; Gür, Emre

2018-03-01

NiO thin films were grown by Radio Frequency (RF) Magnetron Sputtering method under different oxygen partial pressures, which are 0.6 mTorr, 1.3 mTorr and 2.0 mTorr. The effects of oxygen partial pressures on the thin films were analyzed through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS) and Hall measurements. The change in the surface morphology of the thin films has been observed with the SEM and AFM measurements. While nano-pyramids have been obtained on the thin film grown at the lowest oxygen partial pressure, the spherical granules lower than 60 nm in size has been observed for the samples grown at higher oxygen partial pressures. The shift in the dominant XRD peak is realized to the lower two theta angle with increasing the oxygen partial pressures. XPS measurements showed that the Ni2p peak involves satellite peaks and two oxidation states of Ni, Ni2+ and Ni3+, have been existed together with the corresponding splitting in O1s spectrum. P-type conductivity of the grown NiO thin films are confirmed by the Hall measurements with concentrations on the order of 1013 holes/cm-3. Gas sensor measurements revealed minimum of 10% response to the 10 ppm H2 level. Enhanced responsivity of the gas sensor devices of NiO thin films is shown as the oxygen partial pressure increases.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

PubMed Central

Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

2016-01-01

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

Carbon film deposition on SnO{sub 2}/Si(111) using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S.; Darma, Y.

In this paper, carbon deposition on SnO{sub 2} layer using DC unbalanced magnetron-sputtering technique at low temperature has been systematically studied. Sputtering process were carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature at 300 °C. SnO{sub 2} were growth on silicon (111) substrate using thermal evaporation and continuing with dry oxidation of Sn at 225 °C. Thermal evaporation for high purity Sn was conducted by maintain the current source as high as 40 ampere. The quality of SnO{sub 2} on Si(111) and the characteristic of carbon thin film on SnO{sub 2} were analized by meanmore » XRD, FTIR and Raman spectra. XRD analysis shows that SnO{sub 2} film is growth uniformly on Si(111). FTIR and Raman spectra confirm the formation of thin film carbon on SnO{sub 2}. Additionally, thermal annealing for some sample series have been performed to study their structural stability. The change of atomic structure due to thermal annealing were analized by Raman and XRD spectra.« less

Inactivation of bacteria under visible light and in the dark by Cu films. Advantages of Cu-HIPIMS-sputtered films.

PubMed

Ehiasarian, A; Pulgarin, Cesar; Kiwi, John

2012-11-01

The Cu polyester thin-sputtered layers on textile fabrics show an acceptable bacterial inactivation kinetics using sputtering methods. Direct current magnetron sputtering (DCMS) for 40 s of Cu on cotton inactivated Escherichia coli within 30 min under visible light and within 120 min in the dark. For a longer DCMS time of 180 s, the Cu content was 0.294% w/w, but the bacterial inactivation kinetics under light was observed within 30 min, as was the case for the 40-s sputtered sample. This observation suggests that Cu ionic species play a key role in the E. coli inactivation and these species were further identified by X-ray photoelectron spectroscopy (XPS). The 40-s sputtered samples present the highest amount of Cu sites held in exposed positions interacting on the cotton with E. coli. Cu DC magnetron sputtering leads to thin metallic semi-transparent gray-brown Cu coating composed by Cu nanoparticulate in the nanometer range as found by electron microscopy (EM). Cu cotton fabrics were also functionalized by bipolar asymmetric DCMSP. Sputtering by DCMS and DCMSP for longer times lead to darker and more compact Cu films as detected by diffuse reflectance spectroscopy and EM. Cu is deposited on the polyester in the form of Cu(2)O and CuO as quantified by XPS. The redox interfacial reactions during bacterial inactivation involve changes in the Cu oxidation states and in the oxidation intermediates and were followed by XPS. High-power impulse magnetron sputtering (HIPIMS)-sputtered films show a low rugosity indicating that the texture of the Cu nanoparticulate films were smooth. The values of R (q) and R (a) were similar before and after the E. coli inactivation providing evidence for the stability of the HIPIMS-deposited Cu films. The Cu loading percentage required in the Cu films sputtered by HIPIMS to inactivate E. coli was about three times lower compared to DCMS films. This indicates a substantial Cu metal savings within the preparation of antibacterial films.

Sputtering. [as deposition technique in mechanical engineering

NASA Technical Reports Server (NTRS)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Solid Lubrication Fundamentals and Applications. Chapter 6

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

2000-01-01

This chapter focuses attention on the friction and wear properties of selected solid lubricating films to aid users in choosing the best lubricant, deposition conditions, and operational variables. For simplicity, discussion of the tribological properties of concern is separated into two parts. The first part of the chapter discusses the different solid lubricating films selected for study including commercially developed solid film lubricants: (1) bonded molybdenum disulfide (MoS2), (2) magnetron-sputtered MoS2, (3) ion-plated silver, (4) ion-plated lead, (5) magnetron-sputtered diamondlike carbon (MS DLC), and (6) plasma-assisted, chemical-vapor-deposited diamondlike carbon (PACVD DEC) films. Marked differences in the friction and wear properties of the different films resulted from the different environmental conditions (ultrahigh vacuum, humid air, and dry nitrogen) and the solid film lubricant materials. The second part of the chapter discusses the physical and chemical characteristics, friction behavior, and endurance life of the magnetron-sputtered MoS2 films. The role of interface species and the effects of applied load, film thickness, oxygen pressure, environment, and temperature on the friction and wear properties are considered.

Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

2017-05-01

Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

Influence of inert gases on the reactive high power pulsed magnetron sputtering process of carbon-nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Susann; Czigany, Zsolt; Greczynski, Grzegorz

2013-01-15

The influence of inert gases (Ne, Ar, Kr) on the sputter process of carbon and carbon-nitride (CN{sub x}) thin films was studied using reactive high power pulsed magnetron sputtering (HiPIMS). Thin solid films were synthesized in an industrial deposition chamber from a graphite target. The peak target current during HiPIMS processing was found to decrease with increasing inert gas mass. Time averaged and time resolved ion mass spectroscopy showed that the addition of nitrogen, as reactive gas, resulted in less energetic ion species for processes employing Ne, whereas the opposite was noticed when Ar or Kr were employed as inertmore » gas. Processes in nonreactive ambient showed generally lower total ion fluxes for the three different inert gases. As soon as N{sub 2} was introduced into the process, the deposition rates for Ne and Ar-containing processes increased significantly. The reactive Kr-process, in contrast, showed slightly lower deposition rates than the nonreactive. The resulting thin films were characterized regarding their bonding and microstructure by x-ray photoelectron spectroscopy and transmission electron microscopy. Reactively deposited CN{sub x} thin films in Ar and Kr ambient exhibited an ordering toward a fullerene-like structure, whereas carbon and CN{sub x} films deposited in Ne atmosphere were found to be amorphous. This is attributed to an elevated amount of highly energetic particles observed during ion mass spectrometry and indicated by high peak target currents in Ne-containing processes. These results are discussed with respect to the current understanding of the structural evolution of a-C and CN{sub x} thin films.« less

Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Dissanayake, A.; AlFaify, S.; Garratt, E.; Nandasiri, M. I.; Taibu, R.; Tecos, G.; Hamdan, N. M.; Kayani, A.

2011-06-01

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 °C in vacuum.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

PubMed

Lee, Young-Jun; Lim, Byung-Wook; Kim, Joo-Hyung; Kim, Tae-Won; Oh, Byeong-Yun; Heo, Gi-Seok; Kim, Kwang-Young

2012-07-01

Annealing effect on structural and electrical properties of W-doped IZO (WIZO) films for thin film transistors (TFT) was studied under different process conditions. Thin WIZO films were deposited on glass substrates by RF magnetron co-sputtering technique using indium zinc oxide (10 wt.% ZnO-doped In2O3) and WO3 targets in room temperature. The post annealing temperature was executed from 200 degrees C to 500 degrees C under various O2/Ar ratios. We could not find any big difference from the surface observation of as grown films while it was found that the carrier density and sheet resistance of WIZO films were controlled by O2/Ar ratio and post annealing temperature. Furthermore, the crystallinity of WIZO film was changed as annealing temperature increased, resulting in amorphous structure at the annealing temperature of 200 degrees C, while clear In2O3 peak was observed for the annealed over 300 degrees C. The transmittance of as-grown films over 89% in visible range was obtained. As an active channel layer for TFT, it was found that the variation of resistivity, carrier density and mobility concentration of WIZO film decreased by annealing process.

Interface coupling-induced enhancement of magnetoimpedance effect in heterogeneous nanobrush by adjusting textures of Co nanowires

PubMed Central

2013-01-01

Interface coupling-induced and interface coupling-enhanced magnetoimpedance (MI) effect in heterogeneous nanobrush has been investigated. The nanobrush is composed of Fe25Ni75 nanofilm and textured hexagonal close-packed cobalt nanowire array, respectively fabricated by RF magnetron sputtering and electrochemical deposition. The design of this structure is based on the vortex distribution of magnetic moments in thin film, which can be induced by the exchange coupling effect at the interfaces of the nanobrush. The texture of nanowires plays an important role in the MI effect of the nanobrush, which is regulated by controlling the pH values and temperatures of the deposition process. The ‘parallel’ and ‘perpendicular’ coupling models were used to explain the different MI results of the nanobrush with cobalt nanowires, which have (100) and (002) textures, respectively. The optimized MI effect of the nanobrush brought by (100) nanowires can be magnified by 300% with more than 80%/Oe magnetic sensitivity at a low frequency, which has great application potentials in low-frequency MI sensors. PMID:24207011

Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate.

PubMed

Lee, Jae-Kyu; Choi, Duck-Kyun

2012-07-01

Low temperature processing for fabrication of transistor backplane is a cost effective solution while fabrication on a flexible substrate offers a new opportunity in display business. Combination of both merits is evaluated in this investigation. In this study, the ZnO thin film transistor on a flexible Polyethersulphone (PES) substrate is fabricated using RF magnetron sputtering. Since the selection and design of compatible gate insulator is another important issue to improve the electrical properties of ZnO TFT, we have evaluated three gate insulator candidates; SiO2, SiNx and SiO2/SiNx. The SiO2 passivation on both sides of PES substrate prior to the deposition of ZnO layer was effective to enhance the mechanical and thermal stability. Among the fabricated devices, ZnO TFT employing SiNx/SiO2 stacked gate exhibited the best performance. The device parameters of interest are extracted and the on/off current ratio, field effect mobility, threshold voltage and subthreshold swing are 10(7), 22 cm2/Vs, 1.7 V and 0.4 V/decade, respectively.

Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Abu Bakar, Ahmad Shuhaimi; Hassan, Zainuriah

2014-10-01

ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were deposited on Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITO with purity of 99.99% and In2O3:SnO2 weight ratio of 90:10 was used as a target at room temperature. Post-deposition annealing was performed on the TCE at moderate temperature of 500 °C, 600 °C and 700 °C under N2 ambient. It was observed that the structural properties, optical transmittance, electrical characteristics and surface morphology were improved significantly after the post-annealing process. Post-annealed ITO/Ag/Ni at 600 °C shows the best quality of TCE with figure-of-merit (FOM) of 1.5 × 10-2 Ω-1 and high optical transmittance of 83% at 470 nm as well as very low electrical resistivity of 4.3 × 10-5 Ω-cm. The crystalline quality and surface morphological plays an important role in determining the quality of the TCE multilayer thin films properties.

Nanocrystalline SnO2 formation using energetic ion beam.

PubMed

Mohanty, T; Batra, Y; Tripathi, A; Kanjilal, D

2007-06-01

Nanocrystalline tin oxide (SnO2) thin films grown by RF magnetron sputtering technique were characterized by UV-Visible absorption spectroscopy and Photoluminescence spectroscopy. From atomic force microscopic (AFM) and Glancing angle X-ray diffraction (GAXRD) measurements, the radius of grains was found to be approximately 6+/-2 nm. The thin films were bombarded with 250 keV Xe2+ ion beam to observe the stability of nanophases against radiation. For ion bombarded films, optical absorption band edge is shifted towards red region. Atomic force microscopy studies show that the radius of the grains was increased to approximately 8 +/- 1 nm and the grains were nearly uniform in size. The size of the grains has been reduced after ion bombardment in the case of films grown on Si. During this process, defects such as vacancies, voids were generated in the films as well as in the substrates. Ion bombardment induces local temperature increase of thin films causing melting of films. Ion beam induced defects enhances the diffusion of atoms leading to uniformity in size of grains. The role of matrix on ion beam induced grain growth is discussed.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersson, Joakim; Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543 Singapore, Singapore; Andersson, Joakim; Ni, Pavel

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation.

Development of high-vacuum planar magnetron sputtering using an advanced magnetic field geometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohno, Takahiro; Yagyu, Daisuke; Saito, Shigeru, E-mail: saito@ee.kagu.tus.ac.jp

2015-11-15

A permanent magnet in a new magnetic field geometry (namely, with the magnetization in the radial direction) was fabricated and used for high-vacuum planar magnetron sputtering using Penning discharge. Because of the development of this magnet, the discharge current and deposition rate were increased two to three times in comparison with the values attainable with a magnet in the conventional geometry. This improvement was because the available space for effective discharge of the energetic electrons for the ionization increased because the magnetic field distribution increased in both the axial and radial directions of discharge.

NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kazakevich, G.; Johnson, R.; Neubauer, M.

A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operationmore » cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.« less

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

NASA Astrophysics Data System (ADS)

Komlev, Anton A.; Minzhulina, Ekaterina A.; Smirnov, Vladislav V.; Shapovalov, Viktor I.

2018-01-01

The paper describes physical characteristics of the hot target sputtering process, which have not been known before. To switch a magnetron over to the hot target regime, a titanium disk of 1 mm thick with a 1-mm-gap was attached on a 4-mm-thick copper plate cooled by running water. A thermocouple sensor was used to investigate the thermal processes occurring in substrates. The study was performed at the discharge current density of 20-40 mA/cm2 and argon pressure of 3-7 mTorr. The accuracy of temperature measurement appeared to be within ± 5%, due the application of a chromel-copel thermocouple. The study reveals that under these conditions the heating curves have the inflection points positioned proportionally to the discharge current density and argon pressure on a time axis. The inflection point appears in the kinetic curves due to the finite value of the target heating time constant. The study shows that the substrate fixed temperature and substrate heating time constant depend on the argon pressure and relate to the current density by the polynomials of the first and second degrees, respectively. The influence of a target on the substrate heating kinetics is considered in an analytical description by the introduction of a multiplier in the form of an exponential function of time. The results of the research make a novel contribution to the field of the sputtering process.

ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken

Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +}more » rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.« less

Fabrication of porous noble metal thin-film electrode by reactive magnetron sputtering.

PubMed

Cho, Tae-Shin; Choi, Heonjin; Kim, Joosun

2013-06-01

Porous platinum films have been fabricated by reactive sputtering combined with subsequent thermal annealing. Using the SEM, XRD, XPS, and polarization resistance measurement techniques, the microstructural development of the film and its resultant electrochemical properties have been characterized. Pore evolution was understood as a result of the thermal grooving of platinum during annealing process. We demonstrated that crystallization should be followed by agglomeration for the evolution of porous microstructures. Furthermore, reaction sputtering affected the adhesion enhancement between the film and substrate compared to the film deposited by non-reactive sputtering. The polarization resistance of the porous platinum film was five times lower than that of the dense platinum film. At 600 degrees C the resistance of the porous film was 5.67 omega x cm2, and that of the dense film was 38 omega x cm2.

Threshold voltage tuning in AlGaN/GaN HFETs with p-type Cu2O gate synthesized by magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Wang, Lei; Li, Liuan; Xie, Tian; Wang, Xinzhi; Liu, Xinke; Ao, Jin-Ping

2018-04-01

In present study, copper oxide films were prepared at different sputtering powers (10-100 W) using magnetron reactive sputtering. The crystalline structure, surface morphologies, composition, and optical band gap of the as-grown films are dependent on sputtering power. As the sputtering power decreasing from 100 to 10 W, the composition of films changed from CuO to quasi Cu2O domination. Moreover, when the sputtering power is 10 W, a relative high hole carrier density and high-surface-quality quasi Cu2O thin film can be achieved. AlGaN/GaN HFETs were fabricated with the optimized p-type quasi Cu2O film as gate electrode, the threshold voltage of the device shows a 0.55 V positive shift, meanwhile, a lower gate leakage current, a higher ON/OFF drain current ratio of ∼108, a higher electron mobility (1465 cm2/Vs), and a lower subthreshold slope of 74 mV/dec are also achieved, compared with the typical Ni/Au-gated HFETs. Therefore, Cu2O have a great potential to develop high performance p-type gate AlGaN/GaN HFETs.

Researches on the Improvement of the Bioactivity of TiO2 Deposits, Obtained by Magnetron Sputtering - DC

NASA Astrophysics Data System (ADS)

Toma, B. F.; Baciu, R. E.; Bejinariu, C.; Cimpoieşu, N.; Ciuntu, B. M.; Toma, S. L.; Burduhos-Nergis, D. P.; Timofte, D.

2018-06-01

In this paper, layers of TiO2 were deposited, by magnetron sputtering, on a glass support. The parameters of the deposition process were kept constant except for the O2/(Ar + O2) ratio that varied on three levels. The physical and mechanical properties of the layers obtained were investigated by SEM optical microscopy, electronics, AFM and X-ray diffraction. The bioactivity of TiO2 surfaces was investigated by growing M3C3-E1 osteoblast cells produced by RIKEN Cell Bank (Japan) for a period of 5 days. The modification of the working environment in the enclosure determines both the phasic modification in the TiO2 film, respectively the amount of the anatase or rutile phase and the decrease of the average roughness of the film from 112.3nm to 56.7nm. The research has demonstrated that the finer layers with a high content of anatase promote the growth of M3C3-E1 cells.

Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization.

PubMed

Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

2016-11-04

Tungsten diselenide (WSe 2 ) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe 2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe 2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe 2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe 2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe 2 film texture. Based on the stress state of the W film, a model for growth of the WSe 2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe 2 film.

Effect of magnetron sputtering parameters and stress state of W film precursors on WSe2 layer texture by rapid selenization

PubMed Central

Li, Hongchao; Gao, Di; Xie, Senlin; Zou, Jianpeng

2016-01-01

Tungsten diselenide (WSe2) film was obtained by rapid selenization of magnetron sputtered tungsten (W) film. To prevent WSe2 film peeling off from the substrate during selenization, the W film was designed with a double-layer structure. The first layer was deposited at a high sputtering-gas pressure to form a loose structure, which can act as a buffer layer to release stresses caused by WSe2 growth. The second layer was deposited naturally on the first layer to react with selenium vapour in the next step. The effect of the W film deposition parameters(such as sputtering time, sputtering-gas pressure and substrate bias voltage)on the texture and surface morphology of the WSe2 film was studied. Shortening the sputtering time, increasing the sputtering-gas pressure or decreasing the substrate bias voltage can help synthesize WSe2 films with more platelets embedded vertically in the matrix. The stress state of the W film influences the WSe2 film texture. Based on the stress state of the W film, a model for growth of the WSe2 films with different textures was proposed. The insertion direction of the van der Waals gap is a key factor for the anisotropic formation of WSe2 film. PMID:27812031

Probing domain switching dynamics in ferroelectric thick films by small field e31,f piezoelectric measurement

NASA Astrophysics Data System (ADS)

Cheng, Hongbo; Ouyang, Jun; Kanno, Isaku

2017-07-01

Epitaxial Pb(Zr0.53Ti0.47)O3 films were grown on (001) Pt/(001) MgO via rf-magnetron sputtering. Switching dynamics of 90° and 180° domains under bi-polar electric fields were probed by using small-field e31 ,f measurements in which the evolution of the transverse piezoelectric response with the bias voltage represents a set of fingerprints of the evolving domain structure. Furthermore, the asymmetric e31 ,f-V curves revealed a strong built-in electric field, which was verified by the standard polarization-electric field hysteresis measurement. Finally, X-ray 2θ-scan patterns under DC bias voltages were collected for the piezoelectric specimen. The domain switching sequence indicated by the XRD results is consistent with that revealed by the e31 ,f measurement.

Time and temperature dependent breakdown characteristics of ZnS:Mn films obtained by rf-magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhigal'Skii, A. A.; Mukhachev, V. A.; Troyan, P. E.

1994-04-01

Breakdown delay times (tdel) for films of managanese-doped zinc sulfide (ZnS:Mn) were measured in the range 10-6-10-1 s. The maximum value was tdel=10-3-10-2 s. The electrical strength (Ebr) was found to increase as the voltage pulse duration was reduced, the more so the thinner the ZnS:Mn film. The temperature dependence of Ebr exhibited a weak reduction in Ebr as the temperature was raised to roughly 80°C and a sharp reduction in Ebr for T>130°C. A maximum in Ebr was observed at T≈130°C which is presumably explained by a structural modification of the ZnS:Mn film. The experimental results obtained are explained in terms of a combined electronic and thermal breakdown mechanism.

Transparent ITO electrode in the polymer network liquid crystal variable optical attenuator

NASA Astrophysics Data System (ADS)

Zhang, Xindong; Dong, Wei; Liu, Caixia; Chen, Yinghua; Ruan, Shengping; Zhang, Shuang; Guo, Wenbin; Yang, Dong; Han, Lin; Chen, Weiyou

2004-05-01

Indium tin oxide (ITO) films as transparent conductors have caused a great deal of interest due to their prominent electro-optical behavior. This paper describes a study of the properties of ITO thin films that are used for a new type variable optical attenuator using polymer network liquid crystal (PNLC). The mechanism of PNLC optical attenuator operation is that the light from the input fiber is scattered when no voltage is applied, and the light passes through the attenuator when sufficient voltage is applied. So the ITO thin films can provide transparent electrodes for PNLC. They were deposited under various preparation conditions using the radio-frequency (rf) magnetron sputtering technique. Here discuss the results of the structural, electrical and optical properties of the ITO films. The paper presents some experimental results obtained in laboratory.

Effects of applied electric field during postannealing on the tunable properties of (Ba,Sr)TiO3 thin films

NASA Astrophysics Data System (ADS)

Xia, Yidong; Cheng, Jinbo; Pan, Bai; Wu, Di; Meng, Xiangkang; Liu, Zhiguo

2005-08-01

The impact of postannealing in electric field on the structure, tunability, and dielectric behavior of rf magnetron sputtering derived (Ba,Sr)TiO3 films has been studied. It has been demonstrated that postannealing in the proper electric field can increase the dielectric constant and the tunability remarkably and destroy the symmetry of capacitance-voltage characteristics of the films. The increased out-of-plane lattice constant and the appearance of the hysteresis loops in the electric-annealed films indicated the formation of small polar regions with tetragonal structure, which are responsible for the increased dielectric constant and tunability. It was proposed that the segregation of Ti3+ ions caused by electric annealing could induce the formation of BaTiO3-like regions, which are ferroelectric at room temperature.

Contrastive Study on the Structure and the Ultraviolet Absorption Property of Multiple-Doped and Element-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Xu, Yunyun; Zhang, Tao; Lin, Zhenrong; Tian, Yanfeng; Zhou, Shandan

Sb2O3- and CeO2-doped ZnO thin films were prepared by RF magnetron sputtering technique. The influence of Sb2O3 and CeO2 on the structure and ultraviolet (UV) absorption properties was studied by X-ray diffraction and UV-Vis spectrophotometry. Results show that multiple doping of films had a prominent effect on the development of crystal grains and the UV absorption property. Ce and Sb exist in many forms in the ZnO film. The multiple-doped films also show enhanced UVA absorption, and the UV absorption peak widens and the absorption intensity increases. Sb plays a dominant role on the structure and UV absorption of ZnO thin films, which are enhanced by Ce.

Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shao, Guojian; Lou, Chaogang; Kang, Jian

2015-12-21

Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluatemore » roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.« less

Investigation of high power impulse magnetron sputtering (HIPIMS) discharge using fast ICCD camera

NASA Astrophysics Data System (ADS)

Hecimovic, Ante

2012-10-01

High power impulse magnetron sputtering (HIPIMS) combines impulse glow discharges at power levels up to the MW range with conventional magnetron cathodes to achieve a highly ionised sputtered flux. The dynamics of the HIPIMS discharge was investigated using fast Intensified Charge Coupled Device (ICCD) camera. In the first experiment the HIPIMS plasma was recorded from the side with goal to analyse the plasma intensity using Abel inversion to obtain the emissivity maps of the plasma species. Resulting emissivity maps provide the information on the spatial distribution of Ar and sputtered material and evolution of the plasma chemistry above the cathode. In the second experiment the plasma emission was recorded with camera facing the target. The images show that the HIPIMS plasma develops drift wave type instabilities characterized by well defined regions of high and low plasma emissivity along the racetrack of the magnetron. The instabilities cause periodic shifts in the floating potential. The structures rotate in ExB direction at velocities of 10 kms-1 and frequencies up to 200 kHz. The high emissivity regions comprise Ar and metal ion emission with strong Ar and metal neutral emission depletion. A detailed analysis of the temporal evolution of the saturated instabilities using four consequently triggered fast ICCD cameras is presented. Furthermore working gas pressure and discharge current variation showed that the shape and the speed of the instability strongly depend on the working gas and target material combination. In order to better understand the mechanism of the instability, different optical interference band pass filters (of metal and gas atom, and ion lines) were used to observe the spatial distribution of each species within the instability.

CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

PubMed

Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

2014-12-24

Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.

Hybrid biocomposites based on titania nanotubes and a hydroxyapatite coating deposited by RF-magnetron sputtering: Surface topography, structure, and mechanical properties

NASA Astrophysics Data System (ADS)

Chernozem, Roman V.; Surmeneva, Maria A.; Krause, Bärbel; Baumbach, Tilo; Ignatov, Viktor P.; Tyurin, Alexander I.; Loza, Kateryna; Epple, Matthias; Surmenev, Roman A.

2017-12-01

In this study, biocomposites based on porous titanium oxide structures and a calcium phosphate (CaP) or hydroxyapatite (HA) coating are described and prepared. Nanotubes (NTs) with different pore dimensions were processed using anodic oxidation of Ti substrates in a NH4F-containing electrolyte solution at anodization voltages of 30 and 60 V with a DC power supply. The external diameters of the nanotubes prepared at 30 V and 60 V were 53 ± 10 and 98 ± 16 nm, respectively. RF-magnetron sputtering of the HA target in a single deposition run was performed to prepare a coating on the surface of TiO2 NTs prepared at 30 and 60 V. The thickness of the CaP coating deposited on the mirror-polished Si substrate in the same deposition run with TiO2 NTs was determined by optical ellipsometry (SE) 95 ± 5 nm. Uncoated and CaP-coated NTs were annealed at 500 °C in air. Afterwards, the presence of TiO2 (anatase) was observed. The scanning electron microscopy (SEM), X-ray diffraction (XRD), photoelectron spectroscopy (XPS) and nanoindentation results revealed the influence that the NT dimensions had on the CaP coating deposition process. The tubular surfaces of the NTs were completely coated with the HA coating when prepared at 30 V, and no homogeneous CaP coating was observed when prepared at 60 V. The XRD patterns show peaks assigned to crystalline HA only for the coated TiO2 NTs prepared at 30 V. High-resolution XPS spectra show binding energies (BE) of Ca 2p, P 2p and O 1s core-levels corresponding to HA and amorphous calcium phosphate on TiO2 NTs prepared at 30 V and 60 V, respectively. Fabrication of TiO2 NTs results in a significant decrease to the elastic modulus and nanohardness compared to the Ti substrate. The porous structure of the NTs causes an increase in the elastic strain to failure of the coating (H/E) and the parameter used to describe the resistance of the material to plastic deformation (H3/E2) at the nanoscale level compared to the Ti substrate. Furthermore, only the HA coating on the NTs exhibits a significantly increased H/E ratio and H3/E2 factor compared to the NTs and Ti substrate. Increases in resistance to penetration for the indenter were also observed for HA-coated TiO2 NTs prepared at 30 V compared to uncoated and CaP-coated NTs prepared at 60 V.

Modeling and experimental studies of a side band power re-injection locked magnetron

NASA Astrophysics Data System (ADS)

Ye, Wen-Jun; Zhang, Yi; Yuan, Ping; Zhu, Hua-Cheng; Huang, Ka-Ma; Yang, Yang

2016-12-01

A side band power re-injection locked (SBPRIL) magnetron is presented in this paper. A tuning stub is placed between the external injection locked (EIL) magnetron and the circulator. Side band power of the EIL magnetron is reflected back to the magnetron. The reflected side band power is reused and pulled back to the central frequency. A phase-locking model is developed from circuit theory to explain the process of reuse of side band power in SBPRIL magnetron. Theoretical analysis proves that the side band power is pulled back to the central frequency of the SBPRIL magnetron, then the amplitude of the RF voltage increases and the phase noise performance is improved. Particle-in-cell (PIC) simulation of a 10-vane continuous wave (CW) magnetron model is presented. Computer simulation predicts that the frequency spectrum’s peak of the SBPRIL magnetron has an increase of 3.25 dB compared with the free running magnetron. The phase noise performance at the side band offset reduces 12.05 dB for the SBPRIL magnetron. Besides, the SBPRIL magnetron experiment is presented. Experimental results show that the spectrum peak rises by 14.29% for SBPRIL magnetron compared with the free running magnetron. The phase noise reduces more than 25 dB at 45-kHz offset compared with the free running magnetron. Project supported by the National Basic Research Program of China (Grant No. 2013CB328902) and the National Natural Science Foundation of China (Grant No. 61501311).

The effect of changing the magnetic field strength on HiPIMS deposition rates

NASA Astrophysics Data System (ADS)

Bradley, J. W.; Mishra, A.; Kelly, P. J.

2015-06-01

The marked difference in behaviour between HiPIMS and conventional dc or pulsed-dc magnetron sputtering discharges with changing magnetic field strengths is demonstrated through measurements of deposition rate. To provide a comparison between techniques the same circular magnetron was operated in the three excitation modes at a fixed average power of 680 W and a pressure of 0.54 Pa in the non-reactive sputtering of titanium. The total magnetic field strength B at the cathode surface in the middle of the racetrack was varied from 195 to 380 G. DC and pulsed-dc discharges show the expected behaviour that deposition rates fall with decreasing B (here by ~25-40%), however the opposite trend is observed in HiPIMS with deposition rates rising by a factor of 2 over the same decrease in B. These observations are understood from the stand point of the different composition and transport processes of the depositing metal flux between the techniques. In HiPIMS, this flux is largely ionic and slow post-ionized sputtered particles are subject to strong back attraction to the target by a retarding plasma potential structure ahead of them. The height of this potential barrier is known to increase with increasing B. From a simple phenomenological model of the sputtered particles fluxes, and using the measured deposition rates from the different techniques as inputs, the combined probabilities of ionization, α, and back attraction, β, of the metal species in HiPIMS has been calculated. There is a clear fall in αβ (from ~0.9 to ~0.7) with decreasing B-field strengths, we argue primarily due to a weakening of electrostatic ion back attraction, so leading to higher deposition rates. The results indicate that careful design of magnetron field strengths should be considered to optimise HiPIMS deposition rates.

Magnetron Sputtering as a Fabrication Method for a Biodegradable Fe32Mn Alloy

PubMed Central

Jurgeleit, Till; Quandt, Eckhard; Zamponi, Christiane

2017-01-01

Biodegradable metals are a topic of great interest and Fe-based materials are prominent examples. The research task is to find a suitable compromise between mechanical, corrosion, and magnetic properties. For this purpose, investigations regarding alternative fabrication processes are important. In the present study, magnetron sputtering technology in combination with UV-lithography was used in order to fabricate freestanding, microstructured Fe32Mn films. To adjust the microstructure and crystalline phase composition with respect to the requirements, the foils were post-deposition annealed under a reducing atmosphere. The microstructure and crystalline phase composition were investigated by scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction. Furthermore, for mechanical characterization, uniaxial tensile tests were performed. The in vitro corrosion rates were determined by electrochemical polarization measurements in pseudo-physiological solution. Additionally, the magnetic properties were measured via vibrating sample magnetometry. The foils showed a fine-grained structure and a tensile strength of 712 MPa, which is approximately a factor of two higher compared to the sputtered pure Fe reference material. The yield strength was observed to be even higher than values reported in literature for alloys with similar composition. Against expectations, the corrosion rates were found to be lower in comparison to pure Fe. Since the annealed foils exist in the austenitic, and antiferromagnetic γ-phase, an additional advantage of the FeMn foils is the low magnetic saturation polarization of 0.003 T, compared to Fe with 1.978 T. This value is even lower compared to the SS 316L steel acting as a gold standard for implants, and thus enhances the MRI compatibility of the material. The study demonstrates that magnetron sputtering in combination with UV-lithography is a new concept for the fabrication of already in situ geometrically structured FeMn-based foils with promising mechanical and magnetic properties. PMID:29057837

Superconducting Thin Films for the Enhancement of Superconducting Radio Frequency Accelerator Cavities

NASA Astrophysics Data System (ADS)

Burton, Matthew C.

Bulk niobium (Nb) superconducting radio frequency (SRF) cavities are currently the preferred method for acceleration of charged particles at accelerating facilities around the world. However, bulk Nb cavities have poor thermal conductance, impose material and design restrictions on other components of a particle accelerator, have low reproducibility and are approaching the fundamental material-dependent accelerating field limit of approximately 50MV/m. Since the SRF phenomena occurs at surfaces within a shallow depth of ˜1 microm, a proposed solution to this problem has been to utilize thin film technology to deposit superconducting thin films on the interior of cavities to engineer the active SRF surface in order to achieve cavities with enhanced properties and performance. Two proposed thin film applications for SRF cavities are: 1) Nb thin films coated on bulk cavities made of suitable castable metals (such as copper or aluminum) and 2) multilayer films designed to increase the accelerating gradient and performance of SRF cavities. While Nb thin films on copper (Cu) cavities have been attempted in the past using DC magnetron sputtering (DCMS), such cavities have never performed at the bulk Nb level. However, new energetic condensation techniques for film deposition, such as High Power Impulse Magnetron Sputtering (HiPIMS), offer the opportunity to create suitably thick Nb films with improved density, microstructure and adhesion compared to traditional DCMS. Clearly use of such novel technique requires fundamental studies to assess surface evolution and growth modes during deposition and resulting microstructure and surface morphology and the correlation with RF superconducting properties. Here we present detailed structure-property correlative research studies done on Nb/Cu thin films and NbN- and NbTiN-based multilayers made using HiPIMS and DCMS, respectively.

Improvement of adhesion and barrier properties of biomedical stainless steel by deposition of YSZ coatings using RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sánchez-Hernández, Z.E.; CICATA—Altamira, IPN. Grupo CIAMS, Km 14.5, Carretera Tampico-Puerto Industrial Altamira, C. P. 89600, Altamira, Tamps, México; Domínguez-Crespo, M.A., E-mail: mdominguezc@ipn.mx

The AISI 316L stainless steel (SS) has been widely used in both artificial knee and hip joints in biomedical applications. In the present study, yttria stabilized zirconia (YSZ, ZrO{sub 2} + 8% Y{sub 2}O{sub 3}) films were deposited on AISI 316L SS by radio-frequency magnetron sputtering using different power densities (50–250 W) and deposition times (30–120 min) from a YSZ target. The crystallographic orientation and surface morphology were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effects of the surface modification on the corrosion performance of AISI 316L SS were evaluated in phosphatemore » buffered saline (PBS) solution using an electrochemical test on both the virgin and coated samples. The YSZ coatings have a (111) preferred orientation during crystal growth along the c-axis for short deposition times (30–60 min), whereas a polycrystalline structure forms during deposition times from 90 to 120 min. The corrosion protective character of the YSZ coatings depends on the crystal size and film thickness. A significant increase in adhesion and corrosion resistance by at least a factor of 46 and a higher breakdown potential were obtained for the deposited coatings at 200 W (120 min). - Highlights: • Well-formed and protective YSZ coatings were achieved on AISI 316L SS substrates. • Films grown at high power and long deposition time have polycrystalline structures. • The crystal size varies from ∼ 5 to 30 nm as both power and deposition time increased. • The differences of corrosion resistance are attributed to internal film structure.« less

Characterization of the mechanical and thermal interface of copper films on carbon substrates modified by boron based interlayers

PubMed Central

Schäfer, D.; Eisenmenger-Sittner, C.; Chirtoc, Mihai; Kijamnajsuk, P.; Kornfeind, N.; Hutter, H.; Neubauer, E.; Kitzmantel, M.

2011-01-01

The manipulation of mechanical and thermal interfaces is essential for the design of modern composites. Amongst these are copper carbon composites which can exhibit excellent heat conductivities if the Cu/C interface is affected by a suitable interlayer to minimize the Thermal Contact Resistance (TCR) and to maximize the adhesion strength between Cu and C. In this paper we report on the effect of boron based interlayers on wetting, mechanical adhesion and on the TCR of Cu coatings deposited on glassy carbon substrates by magnetron sputtering. The interlayers were 5 nm thick and consisted of pure B and B with additions of the carbide forming metals Mo, Ti and Cr in the range of 5 at.% relative to B. The interlayers were deposited by RF magnetron sputtering from either a pure B target or from a composite target. The interlayer composition was checked by Auger Electron Spectroscopy and found to be homogenous within the whole film. The system C-substrate/interlayer/Cu coating was characterized in as deposited samples and samples heat treated for 30 min at 800 °C under High Vacuum (HV), which mimics typical hot pressing parameters during composite formation. Material transport during heat treatment was investigated by Secondary Ion Mass Spectroscopy (SIMS). The de-wetting and hole formation in the Cu coating upon heat treatment were studied by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The adhesion of the Cu coating was evaluated by mechanical pull-off testing. The TCR was assessed by infrared photothermal radiometry (PTR). A correlation between the adhesion strength and the value of the TCR which was measured by PTR was determined for as deposited as well as for heat treated samples. PMID:22241938

Modeling of metastable phase formation diagrams for sputtered thin films.

PubMed

Chang, Keke; Music, Denis; To Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M

2016-01-01

A method to model the metastable phase formation in the Cu-W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu-W and Cu-V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering.

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

PubMed

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

On Both Spatial And Velocity Distribution Of Sputtered Particles In Magnetron Discharge

NASA Astrophysics Data System (ADS)

Vitelaru, C.; Pohoata, V.; Tiron, V.; Costin, C.; Popa, G.

2012-12-01

The kinetics of the sputtered atoms from the metallic target as well as the time-space distribution of the argon metastable atoms have been investigated for DC and high power pulse magnetron discharge by means of Tunable Diode - Laser Absorption Spectroscopy (TD-LAS) and Tunable Diode - Laser Induced Fluorescence (TD-LIF). The discharge was operated in argon (5-30 mTorr) with two different targets, tungsten and aluminum, for pulses of 1 to 20 μs, at frequencies of 0.2 to 1 kHz. Peak current intensity of ~100 A has been attained at cathode peak voltage of ~1 kV. The mean velocity distribution functions and particle fluxes of the sputtered metal atoms, in parallel and perpendicular direction to the target, have been obtained and compared for DC and pulse mode.

Magnetron Sputtered Pulsed Laser Deposition Scale Up

DTIC Science & Technology

2003-08-14

2:721-726 34 S. J. P. Laube and E. F. Stark, “ Artificial Intellegence in Process Control of Pulsed Laser Deposition”, Proceedings of...The model would be based on mathematical simulation of real process data, neural-networks, or other artificial intelligence methods based on in situ...Laube and E. F. Stark, Proc. Symp. Artificial Intel. Real Time Control, Valencia, Spain, 3-5 Oct. ,1994, p.159-163. International Federation of

Experimental analysis of silicon oxycarbide thin films and waveguides

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Somaschini, Claudio; Iseni, Giosue; Melloni, Andrea

2017-05-01

Silicon oxycarbide (SiOC) thin films are produced with reactive rf magnetron sputtering of a silicon carbide (SiC) target on Si (100) and SiO2/Si substrates under varying deposition conditions. The optical properties of the deposited SiOC thin films are characterized with spectroscopic ellispometry at multiple angles of incidence over a wavelength range 300- 1600 nm. The derived optical constants of the SiOC films are modeled with Tauc-Lorentz model. The refractive index n of the SiOC films range from 1.45 to 1.85 @ 1550 nm and the extinction coefficient k is estimated to be less than 10-4 in the near-infrared region above 1000 nm. The topography of SiOC films is studied with SEM and AFM giving rms roughness of 0.9 nm. Channel waveguides with a SiOC core with a refractive index of 1.7 have been fabricated to demonstrate the potential of sputtered SiOC for integrated photonics applications. Propagation loss as low as 0.39 +/- 0.05 dB/mm for TE and 0.41 +/- 0.05 dB/mm for TM polarizations at telecommunication wavelength 1550 nm is demonstrated.

Synthesis, Characterization and Optical Constants of Silicon Oxycarbide

NASA Astrophysics Data System (ADS)

Memon, Faisal Ahmed; Morichetti, Francesco; Abro, Muhammad Ishaque; Iseni, Giosue; Somaschini, Claudio; Aftab, Umair; Melloni, Andrea

2017-03-01

High refractive index glasses are preferred in integrated photonics applications to realize higher integration scale of passive devices. With a refractive index that can be tuned between SiO2 (1.45) and a-SiC (3.2), silicon oxycarbide SiOC offers this flexibility. In the present work, silicon oxycarbide thin films from 0.1 - 2.0 μm thickness are synthesized by reactive radio frequency magnetron sputtering a silicon carbide SiC target in a controlled argon and oxygen environment. The refractive index n and material extinction coefficient k of the silicon oxycarbide films are acquired with variable angle spectroscopic ellipsometry over the UV-Vis-NIR wavelength range. Keeping argon and oxygen gases in the constant ratio, the refractive index n is found in the range from 1.41 to 1.93 at 600 nm which is almost linearly dependent on RF power of sputtering. The material extinction coefficient k has been estimated to be less than 10-4 for the deposited silicon oxycarbide films in the visible and near-infrared wavelength regions. Morphological and structural characterizations with SEM and XRD confirms the amorphous phase of the SiOC films.

Composition of RF-sputtered refractory compounds determined by X-ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Wheeler, D. R.; Brainard, W. A.

1978-01-01

RF-sputtered coatings of CrB2, MoSi2, Mo2C, TiC, and MoS2 were examined by X-ray photoelectron spectroscopy (XPS). Data on stoichiometry, impurity content, and chemical bonding were obtained. The influences of sputtering target history, deposition time, RF power level, and substrate bias were studied. Significant deviations from stoichiometry and high oxide levels were related to target outgassing. The effect of substrate bias depended on the particular coating material studied.

High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, J. C.; Department of Engineering Physics, Polytechnique Montréal, Montreal, Quebec H3A 3A7; Jha, S. K., E-mail: skylec@gmail.com, E-mail: apwjzh@cityu.edu.hk

2014-11-10

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

Drifting potential humps in ionization zones: The “propeller blades” of high power impulse magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anders, André; Ni, Pavel; Panjan, Matjaž

2013-09-30

Ion energy distribution functions measured for high power impulse magnetron sputtering show features, such as a broad peak at several 10 eV with an extended tail, as well as asymmetry with respect to E×B, where E and B are the local electric and magnetic field vectors, respectively. Here it is proposed that those features are due to the formation of a potential hump of several 10 V in each of the traveling ionization zones. Potential hump formation is associated with a negative-positive-negative space charge that naturally forms in ionization zones driven by energetic drifting electrons.

RP and RQA Analysis for Floating Potential Fluctuations in a DC Magnetron Sputtering Plasma

NASA Astrophysics Data System (ADS)

Sabavath, Gopikishan; Banerjee, I.; Mahapatra, S. K.

2016-04-01

The nonlinear dynamics of a direct current magnetron sputtering plasma is visualized using recurrence plot (RP) technique. RP comprises the recurrence quantification analysis (RQA) which is an efficient method to observe critical regime transitions in dynamics. Further, RQA provides insight information about the system’s behavior. We observed the floating potential fluctuations of the plasma as a function of discharge voltage by using Langmuir probe. The system exhibits quasi-periodic-chaotic-quasi-periodic-chaotic transitions. These transitions are quantified from determinism, Lmax, and entropy of RQA. Statistical investigations like kurtosis and skewness also studied for these transitions which are in well agreement with RQA results.

Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

NASA Astrophysics Data System (ADS)

Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

2013-04-01

ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vitelaru, Catalin; National Institute for Optoelectronics, Magurele-Bucharest, RO 077125; Lundin, Daniel

2013-09-02

The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

Ion energies in high power impulse magnetron sputtering with and without localized ionization zones

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuchen; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Tanaka, Koichi

2015-03-23

High speed imaging of high power impulse magnetron sputtering discharges has revealed that ionization is localized in moving ionization zones but localization disappears at high currents for high yield targets. This offers an opportunity to study the effect ionization zones have on ion energies. We measure that ions have generally higher energies when ionization zones are present, supporting the concept that these zones are associated with moving potential humps. We propose that the disappearance of ionization zones is caused by an increased supply of atoms from the target which cools electrons and reduces depletion of atoms to be ionized.

Evidence for breathing modes in direct current, pulsed, and high power impulse magnetron sputtering plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Yuchen; Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Zhou, Xue

2016-01-18

We present evidence for breathing modes in magnetron sputtering plasmas: periodic axial variations of plasma parameters with characteristic frequencies between 10 and 100 kHz. A set of azimuthally distributed probes shows synchronous oscillations of the floating potential. They appear most clearly when considering the intermediate current regime in which the direction of azimuthal spoke motion changes. Breathing oscillations were found to be superimposed on azimuthal spoke motion. Depending on pressure and current, one can also find a regime of chaotic fluctuations and one of stable discharges, the latter at high current. A pressure-current phase diagram for the different situations is proposed.

BiVO{sub 4} photoanodes for water splitting with high injection efficiency, deposited by reactive magnetron co-sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Haibo; Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin; Freudenberg, Norman

2016-04-15

Photoactive bismuth vanadate (BiVO{sub 4}) thin films were deposited by reactive co-magnetron sputtering from metallic Bi and V targets. The effects of the V-to-Bi ratio, molybdenum doping and post-annealing on the crystallographic and photoelectrochemical (PEC) properties of the BiVO{sub 4} films were investigated. Phase-pure monoclinic BiVO{sub 4} films, which are more photoactive than the tetragonal BiVO{sub 4} phase, were obtained under slightly vanadium-rich conditions. After annealing of the Mo-doped BiVO{sub 4} films, the photocurrent increased 2.6 times compared to undoped films. After optimization of the BiVO{sub 4} film thickness, the photocurrent densities (without a catalyst or a blocking layer ormore » a hole scavenger) exceeded 1.2 mA/cm{sup 2} at a potential of 1.23 V{sub RHE} under solar AM1.5 irradiation. The surprisingly high injection efficiency of holes into the electrolyte is attributed to the highly porous film morphology. This co-magnetron sputtering preparation route for photoactive BiVO{sub 4} films opens new possibilities for the fabrication of large-scale devices for water splitting.« less

[Effect of niobium nitride on the bonding strength of titanium porcelain by magnetron sputtering].

PubMed

Wang, Shu-shu; Zhang, La-bao; Guang, Han-bing; Zhou, Shu; Zhang, Fei-min

2010-05-01

To investigate the effect of magnetron sputtered niobium nitride (NbN) on the bonding strength of commercially pure cast titanium (Ti) and low-fusing porcelain (Ti/Vita titankeramik system). Sixty Ti specimens were randomly divided into four groups, group T1, T2, T3 and T4. All specimens of group T1 and T2 were first treated with 120 microm blasted Al2O3 particles, and then only specimens of group T2 were treated with magnetron sputtered NbN film. All specimens of group T3 and T4 were first treated with magnetron sputtered NbN film and then only specimens of group T4 were treated with 120 microm blasted Al2O3 particles. The composition of the deposits were analyzed by X-ray diffraction (XRD). A universal testing machine was used to perform the three-point bending test to evaluate the bonding strength of Ti and porcelain. The microstructure of NbN, the interface of Ti-porcelain and the fractured Ti surface were observed with scanning electron microscopy (SEM) and energy depressive spectrum (EDS), and the results were compared. The XRD results showed that the NbN deposits were cubic crystalline phases. The bonding strength of Ti and porcelain in T1 to T4 group were (27.2+/-0.8), (43.1+/-0.6), (31.4+/-1.0) and (44.9+/-0.6) MPa. These results were analyzed by one-way analysis of variance and differences between groups were compared using least significant difference test. Significant inter-group differences were found among all groups (P<0.05). The results of SEM showed that with treatment of Al2O3 or NbN, alone, pre-cracks were found in the interface of Ti-porcelain, while samples treated with both Al2O3 and NbN had better bond. EDS of Ti-porcelain interface showed oxidation occurred in T1, T2 and T3, but was well controlled in T4. Magnetron sputtered NbN can prevent Ti from being oxidized, and can improve the bonding strength of Ti/Vita titankeramik system. Al2O3 blast can also improve the bonding strength of Ti/Vita titankeramik system.

Optical and Chemical Properties of Mixed-valent Rhenium Oxide Films Synthesized by Reactive DC Magnetron Sputtering

DTIC Science & Technology

2015-04-03

films were deposited within a stainless steel high vacuum chamber evacuated to a pressure of 5.3 105 Pa (4 107 Torr). A 3 mm thick, 50 mm diameter...G.E. Jellison, Thin Solid Films 234 (1993) 416 –422. [34] J.I. Pankove, Absorption, in: Optical Processes in Semiconductors, Dover Publications, New