Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor

NASA Astrophysics Data System (ADS)

Nigam, Kaushal; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2016-09-01

The conventional tunnel field-effect transistors (TFETs) have shown potential to scale down in sub-22 nm regime due to its lower sub-threshold slope and robustness against short-channel effects (SCEs), however, sensitivity towards temperature variation is a major concern. Therefore, for the first time, we investigate temperature sensitivity analysis of a polarity controlled electrostatically doped tunnel field-effect transistor (ED-TFET). Different performance metrics and analog/RF figure-of-merits were considered and compared for both devices, and simulations were performed using Silvaco ATLAS device tool. We found that the variation in ON-state current in ED-TFET is almost temperature independent due to electrostatically doped mechanism, while, it increases in conventional TFET at higher temperature. Above room temperature, the variation in ION, IOFF, and SS sensitivity in ED-TFET are only 0.11%/K, 2.21%/K, and 0.63%/K, while, in conventional TFET the variations are 0.43%/K, 2.99%/K, and 0.71%/K, respectively. However, below room temperature, the variation in ED-TFET ION is 0.195%/K compared to 0.27%/K of conventional TFET. Moreover, it is analysed that the incomplete ionization effect in conventional TFET severely affects the drive current and the threshold voltage, while, ED-TFET remains unaffected. Hence, the proposed ED-TFET is less sensitive towards temperature variation and can be used for cryogenics as well as for high temperature applications.

Flexible thin-film transistors on plastic substrate at room temperature.

PubMed

Han, Dedong; Wang, Wei; Cai, Jian; Wang, Liangliang; Ren, Yicheng; Wang, Yi; Zhang, Shengdong

2013-07-01

We have fabricated flexible thin-film transistors (TFTs) on plastic substrates using Aluminum-doped ZnO (AZO) as an active channel layer at room temperature. The AZO-TFTs showed n-channel device characteristics and operated in enhancement mode. The device shows a threshold voltage of 1.3 V, an on/off ratio of 2.7 x 10(7), a field effect mobility of 21.3 cm2/V x s, a subthreshold swing of 0.23 V/decade, and the off current of less than 10(-12) A at room temperature. Recently, the flexible displays have become a very hot topic. Flexible thin film transistors are key devices for realizing flexible displays. We have investigated AZO-TFT on flexible plastic substrate, and high performance flexible TFTs have been obtained.

Accelerated Near-Threshold Fatigue Crack Growth Behavior of an Aluminum Powder Metallurgy Alloy

NASA Technical Reports Server (NTRS)

Piascik, Robert S.; Newman, John A.

2002-01-01

Fatigue crack growth (FCG) research conducted in the near threshold regime has identified a room temperature creep crack growth damage mechanism for a fine grain powder metallurgy (PM) aluminum alloy (8009). At very low DK, an abrupt acceleration in room temperature FCG rate occurs at high stress ratio (R = Kmin/Kmax). The near threshold accelerated FCG rates are exacerbated by increased levels of Kmax (Kmax less than 0.4 KIC). Detailed fractographic analysis correlates accelerated FCG with the formation of crack-tip process zone micro-void damage. Experimental results show that the near threshold and Kmax influenced accelerated crack growth is time and temperature dependent.

Threshold analysis of pulsed lasers with application to a room-temperature Co:MgF2 laser

NASA Technical Reports Server (NTRS)

Harrison, James; Welford, David; Moulton, Peter F.

1989-01-01

Rate-equation calculations are used to model accurately the near-threshold behavior of a Co:MgF2 laser operating at room temperature. The results demonstrate the limitations of the conventional threshold analysis in cases of practical interest. This conclusion is applicable to pulsed solid-state lasers in general. The calculations, together with experimental data, are used to determine emission cross sections for the Co:MgF2 laser.

Statistical study of the reliability of oxide-defined stripe cw lasers of (AlGa)As

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ettenberg, M.

1979-03-01

In this report, we describe a statistical study of the reliability of oxide-defined stripe-contact cw injection lasers of (AlGa)As. These devices have one facet coated with Al/sub 2/O/sub 3/ and one facet coated with an Al/sub 2/O/sub 3//Si dichroic reflector; the lasers are optimized for cw low-threshold currents at room temperature, with values typically about 50 mA. Lifetests were carried out at 70 /sup 0/C ambient, in the cw mode of operation with about 5 mW output. Previous lifetests showed that the degradation rate followed a 0.95-eV activation energy so the 70 /sup 0/C environment provides a degradation acceleration factormore » of 190 over that at room temperature. We have found that the device failures follow a log-normal distribution, characterized by a mean time before failure of 4200 h and a standard deviation of 1.3. This corresponds to a mean time to failure (MTTF) of 10/sup 6/ h at room temperature. Failure is defined here as the inability of the device to emit 1 mW of stimulated cw output at 70 /sup 0/C, and assumes that optical feedback will be employed to adjust the laser current during operation. If a constant-current drive is envisioned, the failures for a 3-dB drop in light output also follow a log-normal distribution with a similar slope (standard deviation=1.1) and a MTTF of 2000 h at 70 /sup 0/C (500 000 h at room temperature). The failures were found to be mainly due to bulk gradual degradation and not facet or contact failure. Careful study of lasers before and after lifetest showed a significant increase in contact thermal resistance. However, this increase accounts for only a small portion of the nearly 70% increase in room-temperature cw threshold after failure at 70 /sup 0/C. After failure at 70 /sup 0/C, we also noted a degradation in the near-field and associated far-field pattern of the laser.« less

Accelerated Threshold Fatigue Crack Growth Effect-Powder Metallurgy Aluminum Alloy

NASA Technical Reports Server (NTRS)

Piascik, R. S.; Newman, J. A.

2002-01-01

Fatigue crack growth (FCG) research conducted in the near threshold regime has identified a room temperature creep crack growth damage mechanism for a fine grain powder metallurgy (PM) aluminum alloy (8009). At very low (Delta) K, an abrupt acceleration in room temperature FCG rate occurs at high stress ratio (R = K(sub min)/K(sub max)). The near threshold accelerated FCG rates are exacerbated by increased levels of K(sub max) (K(sub max) = 0.4 K(sub IC)). Detailed fractographic analysis correlates accelerated FCG with the formation of crack-tip process zone micro-void damage. Experimental results show that the near threshold and K(sub max) influenced accelerated crack growth is time and temperature dependent.

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature

NASA Astrophysics Data System (ADS)

Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Ismail, Razali

2018-05-01

The single electron transistor (SET) as a fast electronic device is a candidate for future nanoscale circuits because of its low energy consumption, small size and simplified circuit. It consists of source and drain electrodes with a quantum dot (QD) located between them. Moreover, it operates based on the Coulomb blockade (CB) effect. It occurs when the charging energy is greater than the thermal energy. Consequently, this condition limits SET operation at cryogenic temperatures. Hence, using QD arrays can overcome this temperature limitation in SET which can therefore work at room temperature but QD arrays increase the threshold voltage with is an undesirable effect. In this research, fullerene as a zero-dimensional material with unique properties such as quantum capacitance and high critical temperature has been selected for the material of the QDs. Moreover, the current of a fullerene QD array SET has been modeled and its threshold voltage is also compared with a silicon QD array SET. The results show that the threshold voltage of fullerene SET is lower than the silicon one. Furthermore, the comparison study shows that homogeneous linear QD arrays have a lower CB range and better operation than a ring QD array SET. Moreover, the effect of the number of QDs in a QD array SET is investigated. The result confirms that the number of QDs can directly affect the CB range. Moreover, the desired current can be achieved by controlling the applied gate voltage and island diameters in a QD array SET.

Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate

NASA Technical Reports Server (NTRS)

Qui, Y.; Uhl, D.; Keo, S.

2003-01-01

Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

NASA Astrophysics Data System (ADS)

Sun, Yi; Zhou, Kun; Sun, Qian; Liu, Jianping; Feng, Meixin; Li, Zengcheng; Zhou, Yu; Zhang, Liqun; Li, Deyao; Zhang, Shuming; Ikeda, Masao; Liu, Sheng; Yang, Hui

2016-09-01

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature. To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm-2. The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AlN/AlGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.

A Room Temperature Low-Threshold Ultraviolet Plasmonic Nanolaser

DTIC Science & Technology

2014-09-23

Here we demonstrate the first strong room temperature ultraviolet (B370 nm) SP polariton laser with an extremely low threshold (B3.5MWcm 2). We find...localized surface plasmon and propagating surface plasmon polariton (SPP), has been demonstrated in metal nanosphere cavities6, metal-cladding...Quantum plasmonics. Nat. Phys. 9, 329–340 (2013). 4. Berini, P. & De Leon, I. Surface plasmon- polariton amplifiers and lasers. Nat. Photon. 6, 16–24 (2012

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

PubMed

Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-05-10

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2). (c) 2010 Optical Society of America.

Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (7 7 5) B GaAs substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Y.; Osaki, S.; Kitada, T.; Shimomura, S.; Takasuka, Y.; Ogura, M.; Hiyamizu, S.

2006-06-01

Self-organized GaAs/(GaAs) 4(AlAs) 2 quantum wires (QWRs) grown on (7 7 5) B-oriented GaAs substrates by molecular beam epitaxy have been applied to an active region of vertical-cavity surface-emitting lasers (VCSELs). The (7 7 5) B GaAs QWR-VCSEL with an aperture diameter of 3 μm lased at a wavelength of 765 nm with a threshold current of 0.38 mA at room temperature. This is the first demonstration of laser operation of the QWR-VCSEL by current injection. The light output was linearly polarized in the direction parallel to the QWRs due to the optical anisotropy of the self-organized (7 7 5) B GaAs QWRs.

Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperature

NASA Astrophysics Data System (ADS)

Bousseksou, A.; Chassagneux, Y.; Coudevylle, J. R.; Colombelli, R.; Sirtori, C.; Patriarche, G.; Beaudoin, G.; Sagnes, I.

2009-08-01

We report distributed-feedback surface-plasmon quantum cascade lasers operating at λ ≈7.6μm. The distributed feedback is obtained by the sole patterning of the top metal contact on a surface plasmon waveguide. Single mode operation with more than 30dB side mode suppression ratio is obtained in pulsed mode and at room temperature. A careful experimental study confirms that by varying the grating duty cycle, one can reduce the waveguide losses with respect to standard, unpatterned surface-plasmon devices. This allows one to reduce the laser threshold current of more than a factor of 2 in the 200-300K temperature range. This approach may lead to a fabrication technology for midinfrared distributed-feedback lasers based on a very simple processing.

Near-Threshold Fatigue Crack Growth Behavior of Fine-Grain Nickel-Based Alloys

NASA Technical Reports Server (NTRS)

Newman, John A.; Piascik, Robert S.

2003-01-01

Constant-Kmax fatigue crack growth tests were performed on two finegrain nickel-base alloys Inconel 718 (DA) and Ren 95 to determine if these alloys exhibit near-threshold time-dependent crack growth behavior observed for fine-grain aluminum alloys in room-temperature laboratory air. Test results showed that increases in K(sub max) values resulted in increased crack growth rates, but no evidence of time-dependent crack growth was observed for either nickel-base alloy at room temperature.

Scaling properties of ballistic nano-transistors

PubMed Central

2011-01-01

Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. PMID:21711899

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zubov, F. I.; Kryzhanovskaya, N. V.; Moiseev, E. I.

The spectral, threshold, and power characteristics of a microdisk laser 31 μm in diameter with an active region based on InAs/InGaAs quantum dots, operating in the continuous-wave (cw) mode at room temperature are studied. The minimum threshold current density is 0.58 kA/cm{sup 2}, the subthreshold linewidth of the whispering-gallery mode is 50 pm at a wavelength lying in the range of 1.26–1.27 μm. The total power emitted into free space reaches ~0.1 mW in the cw mode, whereas the radiation power of the whispering-gallery modes is ~2.8%.

Red-emitting Ga/As,P///In,Ga/P heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Nuese, C. J.; Olsen, G. H.

1978-01-01

The paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe

2015-12-28

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less

Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

NASA Astrophysics Data System (ADS)

Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

2009-11-01

Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babichev, A. V.; Bousseksou, A.; Pikhtin, N. A.

2016-10-15

The room-temperature generation of multiperiod quantum-cascade lasers (QCL) at a wavelength of 5.8 μm in the pulsed mode is demonstrated. The heterostructure of a quantum-cascade laser based on a heterojunction of InGaAs/InAlAs alloys is grown by molecular-beam epitaxy and incorporates 60 identical cascades. The threshold current density of the stripe laser 1.4 mm long and 22 μm wide is ~4.8 kA/cm{sup 2} at a temperature of 303 K. The maximum power of the optical-radiation output from one QCL face, recorded by a detector, is 88 mW. The actual optical-power output from one QCL face is no less than 150 mW.more » The results obtained and possible ways of optimizing the structure of the developed quantum-cascade lasers are discussed.« less

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

PubMed

Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

2017-06-14

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

NASA Astrophysics Data System (ADS)

Mookerjea, Saurabh A.

Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SS<60 mV/dec) transistors are under intense research for its potential to replace the ubiquitous MOSFET. The focus of this dissertation is on the design, fabrication and characterization of band-to-band tunneling field effect transistor (TFET) which belongs to the family of steep slope transistors. TFET with a gate modulated zener tunnel junction at the source allows sub-kT/q (sub-60 mV/dec at room temperature) sub-threshold slope (SS) device operation over a certain gate bias range near the off-state. This allows TFET to achieve much higher I ON-IOFF ratio over a specified gate voltage swing compared to MOSFETs, thus enabling aggressive supply voltage scaling for low power logic operation without impacting its ON-OFF current ratio. This dissertation presents the operating principle of TFET, the material selection strategy and device design for TFET fabrication. This is followed by a novel 6T SRAM design which circumvents the issue of unidirectional conduction in TFET. The switching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

Semiconductor diode laser material and devices with emission in visible region of the spectrum

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.

1975-01-01

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Wang, C. Y.

2017-09-01

Optical bistable devices are fundamental to digital photonics as building blocks of switches, logic gates, and memories in future computer systems. Here, we demonstrate both optical and electrical bistability and capability for switching in a single transistor operated at room temperature. The electro-optical hysteresis is explained by the interaction of electron-hole (e-h) generation and recombination dynamics with the cavity photon modulation in different switching paths. The switch-UP and switch-DOWN threshold voltages are determined by the rate difference of photon generation at the base quantum-well and the photon absorption via intra-cavity photon-assisted tunneling controlled by the collector voltage. Thus, the transistor laser electro-optical bistable switching is programmable with base current and collector voltage, and the basis for high speed optical logic processors.

Cold Multiphoton Matrix Assisted Laser Desorption/Ionization (MALDI)

NASA Astrophysics Data System (ADS)

Harris, Peter; Cooke, William; Tracy, Eugene

2008-05-01

We present evidence of a cold multiphoton MALDI process occurring at a Room Temperature Ionic Liquid (RTIL)/metal interface. Our RTIL, 1-Butyl-3-methylimidazolium hexafluorophosphate, remains a stable liquid at room temperatures, even at pressures lower than 10-9 torr. We focus the 2^nd harmonic of a pulsed (2ns pulse length) Nd:YAG laser onto a gold grid coated with RTIL to generate a cold (narrow velocity spread) ion source with temporal resolution comparable to current MALDI ion sources. Unlike conventional MALDI, we believe multiphoton MALDI does not rely on collisional ionization within the ejection plume, and thus produces large signals at laser intensities just above threshold. Removing the collisional ionization process allow us to eject material from smaller regions of a sample, enhancing the suitability of multiphoton MALDI as an ion imaging technique.

Observations on the relationship of structure to the mechanical properties of thin TD-NiCr sheet

NASA Technical Reports Server (NTRS)

Whittenberger, J. D.

1976-01-01

A study of the relationship between structure and mechanical properties of thin TD-NiCr sheet indicated that the elevated temperature tensile, stress-rupture, and creep strength properties are dependent on grain aspect ratio and sheet thickness. In general, the strength properties increase with increasing grain aspect ratio and sheet thickness. Tensile testing revealed an absence of ductility at elevated temperatures (not less than 1144 K). Significant creep damage as determined by subsequent tensile testing at room temperature occurs after very small amounts (less than 0.1%) of prior creep deformation over the temperature range 1144-1477 K. A threshold stress for creep appears to exist. Creep exposure below the threshold stress at T not less than 1366 K results in almost full retention of room temperature tensile properties.

Research Investigation Directed Toward Extending the Useful Range of the Electromagnetic Spectrum. Appendix.

DTIC Science & Technology

1987-12-31

CuCl Excimer Si x Ge Quadropole mass spectrometer ions photoionic emission, threshold low temperature processing low energy ion beam silicon oxidation ...Etching," ECS Proceedings, 1986. C. F. Yu, M. T. Schmidt, D. V. Podlesnik, and R. M. Osgood, "Optically-Induced, Room- Temperature Oxidation of Gallium...MOS transistors with gate dielectrics obtained by ion beam oxidation at room temperature . Introduction control over the process parameters and

Research Investigation Directed Toward Extending the Useful Range of the Electromagnetic Spectrum.

DTIC Science & Technology

1987-12-31

spectrometer ions photoionic emission threshold low temperature processing low energy ion beam silicon oxidation sputtering of silicon dioxide germanium...Osgood, "Optically-Induced, Room- Temperature Oxidation of Gallium Arsenide," Mat. Res. Soc. Symp. Proc. 75(1987):251-255. P. D. Brewer and R. M. Osgood... oxide films (40-70 A) at room temperature which are suitable for MOSFET devices, has been extensively studied experimentally and theoretically. The

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Laser-induced damage of coatings on Yb:YAG crystals at cryogenic condition

NASA Astrophysics Data System (ADS)

Wang, He; Zhang, Weili; Chen, Shunli; Zhu, Meiping; He, Hongbo; Fan, Zhengxiu

2011-12-01

As large amounts of heat need to be dissipated during laser operation, some diode pumped solid state lasers (DPSSL), especially Yb:YAG laser, operate at cryogenic condition. This work investigated the laser induced damage of coatings (high-reflective and anti-reflective coatings) on Yb:YAG crystals at cryogenic temperature and room temperature. The results show that the damage threshold of coatings at cryogenic temperature is lower than the one at room temperature. Field-emission scanning electron microscopy (FESEM), optical profiler, step profiler and Atomic force microscope (AFM) were used to obtain the damage morphology, size and depth. Taking alteration of physical parameters, microstructure of coatings and the environmental pollution into consideration, we analyzed the key factor of lowering the coating damage threshold at cryogenic conditions. The results are important to understand the mechanisms leading to damage at cryogenic condition.

Microdisk Injection Lasers for the 1.27-μm Spectral Range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhanovskaya, N. V.; Maximov, M. V.; Blokhin, S. A.

2016-03-15

Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 μm and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 μm at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 × 10–3 °C cm{sup 2}/W.

Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3  μm.

PubMed

Kryzhanovskaya, Natalia; Moiseev, Eduard; Polubavkina, Yulia; Maximov, Mikhail; Kulagina, Marina; Troshkov, Sergey; Zadiranov, Yury; Guseva, Yulia; Lipovskii, Andrey; Tang, Mingchu; Liao, Mengya; Wu, Jiang; Chen, Siming; Liu, Huiyun; Zhukov, Alexey

2017-09-01

High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600  A/cm 2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality MD lasers on GaAs substrates. Microlasers on silicon emit in the wavelength range of 1320-1350 nm via the ground state transition of InAs/InGaAs/GaAs quantum dots. The high stability of the lasing wavelength (dλ/dI=0.1  nm/mA) and the low specific thermal resistance of 4×10 -3 °C×cm 2 /W are demonstrated.

Creep and tensile properties of several oxide-dispersion-strengthened nickel-base alloys at 1365 K

NASA Technical Reports Server (NTRS)

Wittenberger, J. D.

1977-01-01

The tensile properties at room temperature and at 1365 K and the tensile creep properties at low strain rates at 1365 K were measured for several oxide-dispersion-strengthened (ODS) alloys. The alloys examined included ODS Ni, ODS Ni-20Cr, and ODS Ni-16Cr-Al. Metallography of creep tested, large grain size ODS alloys indicated that creep of these alloys is an inhomogeneous process. All alloys appear to possess a threshold stress for creep. This threshold stress is believed to be associated with diffusional creep in the large grain size ODS alloys and normal dislocation motion in perfect single crystal (without transverse low angle boundaries) ODS alloys. Threshold stresses for large grain size ODS Ni-20Cr and Ni-16Cr-Al type alloys are dependent on the grain aspect ratio. Because of the deleterious effect of prior creep on room temperature mechanical properties of large grain size ODS alloys, it is speculated that the threshold stress may be the design limiting creep strength property.

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

NASA Astrophysics Data System (ADS)

Iorsh, Ivan; Glauser, Marlene; Rossbach, Georg; Levrat, Jacques; Cobet, Munise; Butté, Raphaël; Grandjean, Nicolas; Kaliteevski, Mikhail A.; Abram, Richard A.; Kavokin, Alexey V.

2012-09-01

The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set of semiclassical Boltzmann equations for the exciton polaritons that are coupled to the rate equation describing the electron-hole plasma population. Two experimentally relevant pumping geometries are considered, namely the direct injection of electrons and holes into the strongly coupled microcavity region and intracavity optical pumping via an embedded light-emitting diode. The theoretical framework allows the determination of the minimum threshold current density Jthr,min as a function of lattice temperature and exciton-cavity photon detuning for the two pumping schemes. A Jthr,min value of 5 and 6 A cm-2 is derived for the direct injection scheme and for the intracavity optical pumping one, respectively, at room temperature at the optimum detuning. Then an approximate quasianalytical model is introduced to derive solutions for both the steady-state and high-speed current modulation. This analysis makes it possible to show that the exciton population, which acts as a reservoir for the stimulated relaxation process, gets clamped once the condensation threshold is crossed, a behavior analogous to what happens in conventional laser diodes with the carrier density above threshold. Finally, the modulation transfer function is calculated for both pumping geometries and the corresponding cutoff frequency is determined.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

NASA Astrophysics Data System (ADS)

Gilet, Ph.; Pougeoise, E.; Grenouillet, L.; Grosse, Ph.; Olivier, N.; Poncet, S.; Chelnokov, A.; Gérard, J. M.; Stevens, R.; Hamelin, R.; Hammar, M.; Berggren, J.; Sundgren, P.

2007-02-01

In this article, we report our results on 1.3μm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GaInNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain fully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 (micron)m to 16 (micron)m diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1- 10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Plasmonic distributed feedback lasers at telecommunications wavelengths.

PubMed

Marell, Milan J H; Smalbrugge, Barry; Geluk, Erik Jan; van Veldhoven, Peter J; Barcones, Beatrix; Koopmans, Bert; Nötzel, Richard; Smit, Meint K; Hill, Martin T

2011-08-01

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating.

PubMed

Shindo, Takahiko; Okumura, Tadashi; Ito, Hitomi; Koguchi, Takayuki; Takahashi, Daisuke; Atsumi, Yuki; Kang, Joonhyun; Osabe, Ryo; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa

2011-01-31

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.

Electrical switching in Sb doped Al23Te77 glasses

NASA Astrophysics Data System (ADS)

Pumlianmunga; Ramesh, K.

2017-08-01

Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Hugh; Todorov, Stan; Colombeau, Benjamin

2012-11-06

We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channelmore » rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.« less

Effect of deep cryogenic temperature on silicon-on-insulator CMOS mismatch: A circuit designer’s perspective

NASA Astrophysics Data System (ADS)

Das, Kushal; Lehmann, Torsten

2014-07-01

The effect of ultra low operating temperature on mismatch among identically designed Silicon-on-Sapphire CMOS devices is investigated in detail from a circuit design view point. The evolution of transistor matching properties for different operating conditions at both room and 4.2 K temperature are presented. The statistical analysis reveals that mismatch at low temperature is effectively unrelated to that at room temperature, which disagrees with previously published literature. The measurement data was used to extract key transistor parameters and the consequence of temperature lowering on their respective variance is estimated. We find that standard deviation of the threshold-voltage mismatch deteriorates by a factor ∼2 at 4.2 K temperature. Similar to room temperature operation, mismatch at 4.2 K is bias point dependent and the degradation of matching at very low temperature depends to some extent on how the bias point shifts upon cooling.

Fully transparent thin film transistors based on zinc oxide channel layer and molybdenum doped indium oxide electrodes

NASA Astrophysics Data System (ADS)

MÄ dzik, Mateusz; Elamurugu, Elangovan; Viegas, Jaime

2016-03-01

In this work we report the fabrication of thin film transistors (TFT) with zinc oxide channel and molybdenum doped indium oxide (IMO) electrodes, achieved by room temperature sputtering. A set of devices was fabricated, with varying channel width and length from 5μm to 300μm. Output and transfer characteristics were then extracted to study the performance of thin film transistors, namely threshold voltage and saturation current, enabling to determine optimal fabrication process parameters. Optical transmission in the UV-VIS-IR are also reported.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

NASA Astrophysics Data System (ADS)

Baryshev, V. I.; Golikova, E. G.; Duraev, V. P.; Kuchinskiĭ, V. I.; Kizhaev, K. Yu; Kuksenkov, D. V.; Portnoĭ, E. L.; Smirnitskiĭ, V. B.

1988-11-01

A study was made of stimulated emission from mesa-stripe distributed-feedback lasers in the form of double heterostructures with separate electron and optical confinement. A diffraction grating with a period Λ = 0.46 μm, formed on the surface of the upper waveguide layer by holographic lithography, ensured distributed feedback in the second order. The threshold current for cw operation at room temperature was 35-70 mA, the shift of the emission wavelength with temperature was ~ 0.08 nm/K, and the feedback coefficient deduced from the width of a "Bragg gap" was 110-150 cm- 1.

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

Near-threshold fatigue crack behaviour in EUROFER 97 at different temperatures

NASA Astrophysics Data System (ADS)

Aktaa, J.; Lerch, M.

2006-07-01

The fatigue crack behaviour in EUROFER 97 was investigated at room temperature (RT), 300, 500 and 550 °C for the assessment of cracks in first wall structures built from EUROFER 97 of future fusion reactors. For this purpose, fatigue crack growth tests were performed using CT specimens with two R-ratios, R = 0.1 and R = 0.5 ( R is the load ratio with R = Fmin/ Fmax where Fmin and Fmax are the minimum and maximum applied loads within a cycle, respectively). Hence, fatigue crack threshold, fatigue crack growth behaviour in the near-threshold range and their dependences on temperature and R-ratio were determined and described using an analytical formula. The fatigue crack threshold showed a monotonous dependence on temperature which is for R = 0.5 insignificantly small. The fatigue crack growth behaviour exhibited for R = 0.1 a non-monotonous dependence on temperature which is explained by the decrease of yield stress and the increase of creep damage with increasing temperature.

Very low threshold-current temperature sensitivity in constricted double-heterojunction AlGaAs lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.; Gilbert, D. B.; Ettenberg, M.

1981-01-01

The temperature dependence of threshold currents in constricted double-heterojunction diode lasers with strong lateral mode confinement is found to be significantly milder than for other types of lasers. The threshold-current relative variations with ambient temperature are typically two to three times less than for other devices of CW-operation capability. Over the interval 10-70 C the threshold currents fit the empirical exponential law exp/(T2-T1)/T0/ with T0 values in the 240-375 C range in pulsed operation, and in the 200-310 C range in CW operation. The external differential quantum efficiency and the mode far-field pattern near threshold are virtually invariant with temperature. The possible causes of high-T0 behavior are analyzed, and a new phenomenon - temperature-dependent current focusing - is presented to explain the results.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature

NASA Astrophysics Data System (ADS)

Nguyen, Dac-Trung; Lombez, Laurent; Gibelli, François; Boyer-Richard, Soline; Le Corre, Alain; Durand, Olivier; Guillemoles, Jean-François

2018-03-01

In common photovoltaic devices, the part of the incident energy above the absorption threshold quickly ends up as heat, which limits their maximum achievable efficiency to far below the thermodynamic limit for solar energy conversion. Conversely, the conversion of the excess kinetic energy of the photogenerated carriers into additional free energy would be sufficient to approach the thermodynamic limit. This is the principle of hot carrier devices. Unfortunately, such device operation in conditions relevant for utilization has never been evidenced. Here, we show that the quantitative thermodynamic study of the hot carrier population, with luminance measurements, allows us to discuss the hot carrier contribution to the solar cell performance. We demonstrate that the voltage and current can be enhanced in a semiconductor heterostructure due to the presence of the hot carrier population in a single InGaAsP quantum well at room temperature. These experimental results substantiate the potential of increasing photovoltaic performances in the hot carrier regime.

Study of LPE methods for growth of InGaAsP/InP CW lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Hawrylo, F. Z.; Smith, R. T.; Levin, E. R.

1980-01-01

Two methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling. Substrates cut on the (100) plane were used, and morphology in both cases was excellent and comparable to that obtainable in AlGaAs materials. A high degree of reproducibility was obtained in the materials grown by the two phased method, which is therefore presently preferred for the preparation of laser material. A refractive index step of 0.28 and an index n = 3.46 were obtained for In.81Ga.19As,5P5 lasing at 1.3 microns. Oxide-stripe lasers with typical room temperature cw threshold currents of 180 mA were obtained and some of them showed single mode behavior without lateral cavity modifications. COntinuous operation of 800 h at room temperature was obtained without noticeable degradation.

Polarization characteristic of a room-temperature Co:MgF2 laser.

PubMed

Zhang, Zengming M; Cui, Yiben B; Li, Fuli L; Zhang, Guobin B; Pu, Qirong R; Xu, Gaojie J

2002-02-20

A study of the polarization characteristic of a Co:MgF2 laser with a 1320-nm YAG pumping laser at room temperature is reported. The thresholds, output energies, and efficiencies of the laser are given at the various polarization states. The more intensive emission is in the pi-polarization pump laser and sigma-polarization laser operation. Performances of the Co:MgF2 lasers are similar for the polarized and unpolarized laser pumping along the optical axis of the crystal.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Comparison of urodynamic volume measurements using room and body temperature saline: a double-blinded randomized crossover study design.

PubMed

Gehrich, Alan Paul; Hill, Micah J; McWilliams, Grant D E; Larsen, Wilma; McCartin, Tamarin

2012-01-01

Urodynamic studies, routinely performed in women with lower urinary tract symptoms, have a large impact on clinical decision making. Unfortunately, these studies are insensitive in reproducing idiopathic detrusor overactivity (IDO). We set out to examine whether serial cystometry with different distending fluid temperatures could better reproduce symptoms. Eighty-six women were enrolled in a double-blinded, randomized, crossover study. Two cystometries were performed in series, starting with either body temperature fluid (BTF) or room temperature fluid (RTF) and then repeating cystometry with the other temperature fluid. Primary outcomes included first sensation, first urge, and maximum cystometric capacity. Secondary outcomes included subjective sensation of bladder discomfort and the incidence of IDO. In aggregate, the temperature of the fluid did not affect volumes of bladder sensation. There were no differences in self-reported bladder irritation or IDO between the different temperature fluids. There was a significant carryover effect with BTF. BTF administered first reached sensory thresholds at lower volumes than when it was administered second after RTF. Room temperature fluid cystometry showed no statistical difference in volume between first fill and second fill. Idiopathic detrusor overactivity contractions were seen in 9% of studies and were not affected by period or temperature. These data suggest that BTF and RTF independently do not affect bladder sensory thresholds. The periodicity in combination with varying fluid temperature is of greater impact. This study documents that changes in temperature of the distending fluid from BTF to RTF or vice versa likely do not provoke IDO contractions.

Room Temperature Magnetic Behavior In Nanocrystalline Ni-Doped Zro2 By Microwave-Assisted Polyol Synthesis

NASA Astrophysics Data System (ADS)

Parimita Rath, Pragyan; Parhi, Pankaj Kumar; Ranjan Panda, Sirish; Priyadarshini, Barsharani; Ranjan Sahoo, Tapas

2017-08-01

This article, deals with a microwave-assisted polyol method to demonstrate a low temperature route < 250°C, to prepare a high temperature cubic zirconia phase. Powder XRD pattern shows broad diffraction peaks suggesting nanometric size of the particles. Magnetic behavior of 1-5 at% Ni doped samples show a threshold for substitutional induced room temperature ferromagnetism up to 3 at% of Ni. TGA data reveals that Ni-doped ZrO2 polyol precursors decompose exothermically below 300°C. IR data confirms the reduction of Zr(OH)4 precipitates to ZrO2, in agreement with the conclusions drawn from the TGA analysis.

Room-temperature current blockade in atomically defined single-cluster junctions

NASA Astrophysics Data System (ADS)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Room-Temperature Low-Threshold Lasing from Monolithically Integrated Nanostructured Porous Silicon Hybrid Microcavities.

PubMed

Robbiano, Valentina; Paternò, Giuseppe M; La Mattina, Antonino A; Motti, Silvia G; Lanzani, Guglielmo; Scotognella, Francesco; Barillaro, Giuseppe

2018-05-22

Silicon photonics would strongly benefit from monolithically integrated low-threshold silicon-based laser operating at room temperature, representing today the main challenge toward low-cost and power-efficient electronic-photonic integrated circuits. Here we demonstrate low-threshold lasing from fully transparent nanostructured porous silicon (PSi) monolithic microcavities (MCs) infiltrated with a polyfluorene derivative, namely, poly(9,9-di- n-octylfluorenyl-2,7-diyl) (PFO). The PFO-infiltrated PSiMCs support single-mode blue lasing at the resonance wavelength of 466 nm, with a line width of ∼1.3 nm and lasing threshold of 5 nJ (15 μJ/cm 2 ), a value that is at the state of the art of PFO lasers. Furthermore, time-resolved photoluminescence shows a significant shortening (∼57%) of PFO emission lifetime in the PSiMCs, with respect to nonresonant PSi reference structures, confirming a dramatic variation of the radiative decay rate due to a Purcell effect. Our results, given also that blue lasing is a worst case for silicon photonics, are highly appealing for the development of low-cost, low-threshold silicon-based lasers with wavelengths tunable from visible to the near-infrared region by simple infiltration of suitable emitting polymers in monolithically integrated nanostructured PSiMCs.

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

NASA Astrophysics Data System (ADS)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

Single Particle Damage Events in Candidate Star Camera Sensors

NASA Technical Reports Server (NTRS)

Marshall, Paul; Marshall, Cheryl; Polidan, Elizabeth; Wacyznski, Augustyn; Johnson, Scott

2005-01-01

Si charge coupled devices (CCDs) are currently the preeminent detector in star cameras as well as in the near ultraviolet (uv) to visible wavelength region for astronomical observations in space and in earth-observing space missions. Unfortunately, the performance of CCDs is permanently degraded by total ionizing dose (TID) and displacement damage effects. TID produces threshold voltage shifts on the CCD gates and displacement damage reduces the charge transfer efficiency (CTE), increases the dark current, produces dark current nonuniformities and creates random telegraph noise in individual pixels. In addition to these long term effects, cosmic ray and trapped proton transients also interfere with device operation on orbit. In the present paper, we investigate the dark current behavior of CCDs - in particular the formation and annealing of hot pixels. Such pixels degrade the ability of a CCD to perform science and also can present problems to the performance of star camera functions (especially if their numbers are not correctly anticipated). To date, most dark current radiation studies have been performed by irradiating the CCDs at room temperature but this can result in a significantly optimistic picture of the hot pixel count. We know from the Hubble Space Telescope (HST) that high dark current pixels (so-called hot pixels or hot spikes) accumulate as a function of time on orbit. For example, the HST Advanced Camera for Surveys/Wide Field Camera instrument performs monthly anneals despite the loss of observational time, in order to partially anneal the hot pixels. Note that the fact that significant reduction in hot pixel populations occurs for room temperature anneals is not presently understood since none of the commonly expected defects in Si (e.g. divacancy, E center, and A-center) anneal at such a low temperature. A HST Wide Field Camera 3 (WFC3) CCD manufactured by E2V was irradiated while operating at -83C and the dark current studied as a function of temperature while the CCD was warmed to a sequence of temperatures up to a maximum of +30C. The device was then cooled back down to -83 and re-measured. Hot pixel populations were tracked during the warm-up and cool-down. Hot pixel annealing began below 40C and the anneal process was largely completed before the detector reached +3OC. There was no apparent sharp temperature dependence in the annealing. Although a large fraction of the hot pixels fell below the threshold to be counted as a hot pixel, they nevertheless remained warmer than the remaining population. The details of the mechanism for the formation and annealing of hot pixels is not presently understood, but it appears likely that hot pixels are associated with displacement damage occurring in high electric field regions.

Spontaneous recombination current in InGaAs/GaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Woodbridge, K.

1990-10-08

We have studied the intrinsic factors which determine the threshold current and its temperature dependence in 160-A-wide In{sub 0.2}Ga{sub 0.8}As single well quantum lasers with GaAs barriers, grown by molecular beam epitaxy on GaAs substrates. By measuring the relative temperature dependence of the spontaneous emission intensity at threshold we show that radiative transitions between higher order ({ital n}=2,3) electron and heavy hole subbands make a significant contribution to the threshold current and its temperature sensitivity, even in devices where the laser transitions are between {ital n}=1 subbands. These higher transitions will also influence the dependence of threshold current and itsmore » temperature sensitivity on well width.« less

Lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Arakawa, Yasuhiko

2017-02-01

Nanowire (NW) lasers have recently attracted increasing attention as ultra-small, highly-efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of single NW lasers utilizing bulk materials, it is crucial to incorporate lower-dimensional quantum nanostructures into the NW in order to achieve superior device performance with respect to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot (QD) is a useful and essential nanostructure that can meet these requirements. In this presentation, we will talk about our recent research activity regarding room temperature lasing of a single GaAs NW containing 50-stacked In0.2Ga0.8As/GaAs QDs. The NW cavities consist of multiple In0.2Ga0.8As/GaAs heterostructures acting as a QD active material, which are grown on shallow (<45 nm) GaAs core NWs and followed by GaAs/Al0.1Ga0.9As/GaAs core/shell/cap structures. Lasing oscillation is achieved at the emission wavelength of 900 nm by properly designing the NW cavity and tailoring the emission energy of each QD to enhance the optical gain. Obtained threshold pump pulse fluence is 179 μJ/cm2 at room temperature and the characteristics temperature is 133K which is higher than that of conventional bulk NW lasers. Our demonstration paves the way toward ultra-small lasers with extremely low-power consumption for integrated photonic systems. Furthermore, we will discuss our recent results on the demonstration of several types of NWQD lasers in order to improve the device performance of the NWQD lasers.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Interface between fatigue, creep and stress-corrosion cracking on Ti6246 titanium alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarrazin-Baudoux, C.; Chabanne, Y.; Petit, J.

1999-07-01

The influence of mean stress on the fatigue crack growth behavior of a Ti6246 alloy has been studied in the near-threshold area at room temperature and at 500 C. Tests were performed at various constant K{sub max} levels in ambient air, high vacuum and humidified Argon. Conditions for the occurrence of an abnormal behavior consisting in the disappearance of the threshold for sufficiently high K{sub max} level, are discussed with respect to environment and temperature. This effect is observed in air and in vacuum for K{sub max} higher than 52 MPa{radical}m, and is related to an intrinsic creep damage processmore » which appears more efficient at room temperature than at 500 C and more accentuated in air than in vacuum. In humidified Argon, the critical Kmax level is reduced at 22 MPa{radical}m at 500 C, such a detrimental effect being related to a Stress Corrosion Cracking process induced by water vapor.« less

Optical properties and Faraday effect of ceramic terbium gallium garnet for a room temperature Faraday rotator.

PubMed

Yoshida, Hidetsugu; Tsubakimoto, Koji; Fujimoto, Yasushi; Mikami, Katsuhiro; Fujita, Hisanori; Miyanaga, Noriaki; Nozawa, Hoshiteru; Yagi, Hideki; Yanagitani, Takagimi; Nagata, Yutaka; Kinoshita, Hiroo

2011-08-01

The optical properties, Faraday effect and Verdet constant of ceramic terbium gallium garnet (TGG) have been measured at 1064 nm, and were found to be similar to those of single crystal TGG at room temperature. Observed optical characteristics, laser induced bulk-damage threshold and optical scattering properties of ceramic TGG were compared with those of single crystal TGG. Ceramic TGG is a promising Faraday material for high-average-power YAG lasers, Yb fiber lasers and high-peak power glass lasers for inertial fusion energy drivers.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

NASA Astrophysics Data System (ADS)

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-11-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

Temperature dependence of threshold current in GaAs/AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-02-22

We have calculated the threshold current and its temperature (T) dependence in the range 200--400 K for AlGaAs quantum well lasers with 25-A-wide GaAs wells using a model which includes lifetime broadening of the transitions and broadening of the density of states function by fluctuations in the well width. The threshold current varies approximately linearly with T and the principal effect of broadening is to increase the threshold current causing a reduction in the fractional change of current with temperature. The apparent value of the parameter T/sub 0/ is increased to approx. =400 K, compared with approx. =320 K withoutmore » broadening. The calculations are compared with experimental data.« less

Determination of threshold and maximum operating electric stresses for selected high voltage insulations. Task 2: Investigation of oil-filled paper insulated cables

NASA Astrophysics Data System (ADS)

Sosnowski, M.; Eager, G. S., Jr.

1983-06-01

Threshold voltage of oil-impregnated paper insulated cables are investigaed. Experimental work was done on model cables specially manufactured for this project. The cables were impregnated with mineral and with synthetic oils. Standard impulse breakdown voltage tests and impulse voltage breakdown tests with dc prestressing were performed at room temperature and at 1000C. The most important result is the finding of very high level of threshold voltage stress for oil-impregnated paper insulated cables. This threshold voltage is approximately 1.5 times higher than the threshold voltage or crosslinked polyethylene insulated cables.

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators

NASA Astrophysics Data System (ADS)

Chen, X. Z.; Zarzuela, R.; Zhang, J.; Song, C.; Zhou, X. F.; Shi, G. Y.; Li, F.; Zhou, H. A.; Jiang, W. J.; Pan, F.; Tserkovnyak, Y.

2018-05-01

We investigate the current-induced switching of the Néel order in NiO (001 )/Pt heterostructures, which is manifested electrically via the spin Hall magnetoresistance. Significant reversible changes in the longitudinal and transverse resistances are found at room temperature for a current threshold lying in the range of 1 07 A /cm2 . The order-parameter switching is ascribed to the antiferromagnetic dynamics triggered by the (current-induced) antidamping torque, which orients the Néel order towards the direction of the writing current. This is in stark contrast to the case of antiferromagnets such as Mn2Au and CuMnAs, where fieldlike torques induced by the Edelstein effect drive the Néel switching, therefore resulting in an orthogonal alignment between the Néel order and the writing current. Our findings can be readily generalized to other biaxial antiferromagnets, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

An exciton-polariton laser based on biologically produced fluorescent protein

PubMed Central

Dietrich, Christof P.; Steude, Anja; Tropf, Laura; Schubert, Marcel; Kronenberg, Nils M.; Ostermann, Kai; Höfling, Sven; Gather, Malte C.

2016-01-01

Under adequate conditions, cavity polaritons form a macroscopic coherent quantum state, known as polariton condensate. Compared to Wannier-Mott excitons in inorganic semiconductors, the localized Frenkel excitons in organic emitter materials show weaker interaction with each other but stronger coupling to light, which recently enabled the first realization of a polariton condensate at room temperature. However, this required ultrafast optical pumping, which limits the applications of organic polariton condensates. We demonstrate room temperature polariton condensates of cavity polaritons in simple laminated microcavities filled with biologically produced enhanced green fluorescent protein (eGFP). The unique molecular structure of eGFP prevents exciton annihilation even at high excitation densities, thus facilitating polariton condensation under conventional nanosecond pumping. Condensation is clearly evidenced by a distinct threshold, an interaction-induced blueshift of the condensate, long-range coherence, and the presence of a second threshold at higher excitation density that is associated with the onset of photon lasing. PMID:27551686

Stability of procalcitonin at room temperature.

PubMed

Milcent, Karen; Poulalhon, Claire; Fellous, Christelle Vauloup; Petit, François; Bouyer, Jean; Gajdos, Vincent

2014-01-01

The aim was to assess procalcitonin (PCT) stability after two days of storage at room temperature. Samples were collected from febrile children aged 7 to 92 days and were rapidly frozen after sampling. PCT levels were measured twice after thawing: immediately (named y) and 48 hours later after storage at room temperature (named x). PCT values were described with medians and interquartile ranges or by categorizing them into classes with thresholds 0.25, 0.5, and 2 ng/mL. The relationship between x and y PCT levels was analyzed using fractional polynomials in order to predict the PCT value immediately after thawing (named y') from x. A significant decrease in PCT values was observed after 48 hours of storage at room temperature, either in median, 30% lowering (p < 0.001), or as categorical variable (p < 0.001). The relationship between x and y can be accurately modeled with a simple linear model: y = 1.37 x (R2 = 0.99). The median of the predicted PCT values y' was quantitatively very close to the median of y and the distributions of y and y' across categories were very similar and not statistically different. PCT levels noticeably decrease after 48 hours of storage at room temperature. It is possible to pre- dict accurately effective PCT values from the values after 48 hours of storage at room temperature with a simple statistical model.

Above room temperature operation of InGaAs/AlGaAs/GaAs quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Gutowski, P.; Hałdaś, G.; Kolek, A.; Sankowska, I.; Grzonka, J.; Mizera, J.; Pierściński, K.; Bugajski, M.

2018-03-01

In this work we report on the performance of mid-infrared quantum cascade lasers (QCLs) based on strained InGaAs/AlGaAs grown by molecular beam epitaxy on GaAs substrate. Structures were grown with indium content from 1% to 6% in GaAs quantum wells (QW) and 45% of Al in AlGaAs barrier layers. The design results in strained heterostructure, however, no strain relaxation was observed as documented by x-ray diffraction measurements up to ∼3% of In content in QWs. The investigation of heterostructures and devices was performed, including structural measurements and electrooptical characterization of devices. Devices fabricated from epi wafers with 2.64% of In exhibited performance largely improved over GaAs/AlGaAs QCLs. Roughly two times reduction of the threshold current density was observed at lasing wavelength ∼9.45 μm. The lasers operated in pulsed mode up to T = 50 °C with characteristic temperature T 0 = 115 K. The decrease of the threshold current density has been mainly attributed to the reduction of interface roughness scattering and the increase of activation energy for the escape of carriers from the upper laser level to the 3D continuum. Further increase of In content in QWs resulted in the deterioration of device parameters.

The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

2017-07-01

In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

NASA Astrophysics Data System (ADS)

Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

2008-12-01

Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

Effects of Temperature on the Histotripsy Intrinsic Threshold for Cavitation.

PubMed

Vlaisavljevich, Eli; Xu, Zhen; Maxwell, Adam; Mancia, Lauren; Zhang, Xi; Lin, Kuang-Wei; Duryea, Alexander; Sukovich, Jonathan; Hall, Tim; Johnsen, Eric; Cain, Charles

2016-05-10

Histotripsy is an ultrasound ablation method that depends on the initiation of a dense cavitation bubble cloud to fractionate soft tissue. Previous work has demonstrated that a cavitation cloud can be formed by a single acoustic pulse with one high amplitude negative cycle, when the negative pressure amplitude exceeds a threshold intrinsic to the medium. The intrinsic thresholds in soft tissues and tissue phantoms that are water-based are similar to the intrinsic threshold of water over an experimentally verified frequency range of 0.3-3 MHz. Previous work studying the histotripsy intrinsic threshold has been limited to experiments performed at room temperature (~20°C). In this study, we investigate the effects of temperature on the histotripsy intrinsic threshold in water, which is essential to accurately predict the intrinsic thresholds expected over the full range of in vivo therapeutic temperatures. Based on previous work studying the histotripsy intrinsic threshold and classical nucleation theory, we hypothesize that the intrinsic threshold will decrease with increasing temperature. To test this hypothesis, the intrinsic threshold in water was investigated both experimentally and theoretically. The probability of generating cavitation bubbles was measured by applying a single pulse with one high amplitude negative cycle at 1 MHz to distilled, degassed water at temperatures ranging from 10°C-90°C. Cavitation was detected and characterized by passive cavitation detection and high-speed photography, from which the probability of cavitation was measured vs. pressure amplitude. The results indicate that the intrinsic threshold (the negative pressure at which the cavitation probability=0.5) significantly decreases with increasing temperature, showing a nearly linear decreasing trend from 29.8±0.4 MPa at 10˚C to 14.9±1.4 MPa at 90˚C. Overall, the results of this study support our hypothesis that the intrinsic threshold is highly dependent upon the temperature of the medium, which may allow for better predictions of cavitation generation at body temperature in vivo and at the elevated temperatures commonly seen in high intensity focused ultrasound (HIFU) regimes.

Effects of Temperature on the Histotripsy Intrinsic Threshold for Cavitation

PubMed Central

Vlaisavljevich, Eli; Xu, Zhen; Maxwell, Adam; Mancia, Lauren; Zhang, Xi; Lin, Kuang-Wei; Duryea, Alexander; Sukovich, Jonathan; Hall, Tim; Johnsen, Eric; Cain, Charles

2018-01-01

Histotripsy is an ultrasound ablation method that depends on the initiation of a dense cavitation bubble cloud to fractionate soft tissue. Previous work has demonstrated that a cavitation cloud can be formed by a single acoustic pulse with one high amplitude negative cycle, when the negative pressure amplitude exceeds a threshold intrinsic to the medium. The intrinsic thresholds in soft tissues and tissue phantoms that are water-based are similar to the intrinsic threshold of water over an experimentally verified frequency range of 0.3–3 MHz. Previous work studying the histotripsy intrinsic threshold has been limited to experiments performed at room temperature (~ 20°C). In this study, we investigate the effects of temperature on the histotripsy intrinsic threshold in water, which is essential to accurately predict the intrinsic thresholds expected over the full range of in vivo therapeutic temperatures. Based on previous work studying the histotripsy intrinsic threshold and classical nucleation theory, we hypothesize that the intrinsic threshold will decrease with increasing temperature. To test this hypothesis, the intrinsic threshold in water was investigated both experimentally and theoretically. The probability of generating cavitation bubbles was measured by applying a single pulse with one high amplitude negative cycle at 1 MHz to distilled, degassed water at temperatures ranging from 10°C–90°C. Cavitation was detected and characterized by passive cavitation detection and high-speed photography, from which the probability of cavitation was measured vs. pressure amplitude. The results indicate that the intrinsic threshold (the negative pressure at which the cavitation probability = 0.5) significantly decreases with increasing temperature, showing a nearly linear decreasing trend from 29.8±0.4 MPa at 10°C to 14.9±1.4 MPa at 90°C. Overall, the results of this study support our hypothesis that the intrinsic threshold is highly dependent upon the temperature of the medium, which may allow for better predictions of cavitation generation at body temperature in vivo and at the elevated temperatures commonly seen in high intensity focused ultrasound (HIFU) regimes. PMID:28113706

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

Continuous-wave operation of a room-temperature, diode-laser-pumped, 946-nm Nd:YAG laser

NASA Technical Reports Server (NTRS)

Fan, T. Y.; Byer, Robert L.

1987-01-01

Single-stripe diode-laser-pumped operation of a continuous-wave 946-nm Nd:YAG laser with less than 10-mW threshold has been demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Process Studies on Laser Welding of Copper with Brilliant Green and Infrared Lasers

NASA Astrophysics Data System (ADS)

Engler, Sebastian; Ramsayer, Reiner; Poprawe, Reinhart

Copper materials are classified as difficult to weld with state-of-the-art lasers. High thermal conductivity in combination with low absorption at room temperature require high intensities for reaching a deep penetration welding process. The low absorption also causes high sensitivity to variations in surface conditions. Green laser radiation shows a considerable higher absorption at room temperature. This reduces the threshold intensity for deep penetration welding significantly. The influence of the green wavelength on energy coupling during heat conduction welding and deep penetration welding as well as the influence on the weld shape has been investigated.

Fatigue and fracture mechanical behavior for Chinese A508-3 steel at room temperature

NASA Astrophysics Data System (ADS)

Shi, K. K.; Xie, H.; Zheng, B.; Fu, X. L.

2018-06-01

Material, A508-3 steel, has been used in nuclear reactor vessels. In the present study, fatigue and fracture mechanical behavior of Chinese A5083 steel at room temperature are studied by mechanical material testing machine (MTS). Test data of material’s mechanical behavior including uniaxial tension, low cycle fatigue (LCF), threshold value of stress intensity factor (SIF) range, fatigue crack growth (FCG), and fracture toughness is generated and given for further study. It is worth noting that the model in predicting FCG of material from LCF parameters is verified and discussed.

Room temperature, very sensitive thermometer using a doubly clamped microelectromechanical beam resonator for bolometer applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Y., E-mail: zhangya@iis.u-tokyo.ac.jp; Watanabe, Y.; Hosono, S.

We propose a room temperature, all electrical driving and detecting, very sensitive thermometer structure using a microelectromechanical (MEMS) resonator for bolometer applications. We have fabricated a GaAs doubly clamped MEMS beam resonator whose oscillation can be excited and detected by the piezoelectric effect. When a heating power is applied to a NiCr film deposited on the MEMS beam surface, internal thermal stress is generated in the beam, leading to a reduction in the resonance frequency. The present device detects the shift in the resonance frequency caused by heating and works as a very sensitive thermometer. When the resonator was drivenmore » by a voltage slightly below the threshold for the nonlinear, hysteretic oscillation, the thermometer showed a voltage responsivity of about 3300 V/W, while keeping a low noise spectral density of about 60 nV/Hz{sup 1/2}, demonstrating a noise equivalent power of <20 pW/Hz{sup 1/2} even at room temperature. The observed effect can be used for realizing high-sensitivity terahertz bolometers for room-temperature operation.« less

Definition of temperature thresholds: the example of the French heat wave warning system.

PubMed

Pascal, Mathilde; Wagner, Vérène; Le Tertre, Alain; Laaidi, Karine; Honoré, Cyrille; Bénichou, Françoise; Beaudeau, Pascal

2013-01-01

Heat-related deaths should be somewhat preventable. In France, some prevention measures are activated when minimum and maximum temperatures averaged over three days reach city-specific thresholds. The current thresholds were computed based on a descriptive analysis of past heat waves and on local expert judgement. We tested whether a different method would confirm these thresholds. The study was set in the six cities of Paris, Lyon, Marseille, Nantes, Strasbourg and Limoges between 1973 and 2003. For each city, we estimated the excess in mortality associated with different temperature thresholds, using a generalised additive model, controlling for long-time trends, seasons and days of the week. These models were used to compute the mortality predicted by different percentiles of temperatures. The thresholds were chosen as the percentiles associated with a significant excess mortality. In all cities, there was a good correlation between current thresholds and the thresholds derived from the models, with 0°C to 3°C differences for averaged maximum temperatures. Both set of thresholds were able to anticipate the main periods of excess mortality during the summers of 1973 to 2003. A simple method relying on descriptive analysis and expert judgement is sufficient to define protective temperature thresholds and to prevent heat wave mortality. As temperatures are increasing along with the climate change and adaptation is ongoing, more research is required to understand if and when thresholds should be modified.

Ballistic-electron-emission spectroscopy of Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures: Conduction-band offsets, transport mechanisms, and band-structure effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

OShea, J.J.; Brazel, E.G.; Rubin, M.E.

1997-07-01

We report an extensive investigation of semiconductor band-structure effects in single-barrier Al{sub x}Ga{sub 1{minus}x}As/GaAs heterostructures using ballistic-electron-emission spectroscopy (BEES). The transport mechanisms in these single-barrier structures were studied systematically as a function of temperature and Al composition over the full compositional range (0{le}x{le}1). The initial ({Gamma}) BEES thresholds for Al{sub x}Ga{sub 1{minus}x}As single barriers with 0{le}x{le}0.42 were extracted using a model which includes the complete transmission probability of the metal-semiconductor interface and the semiconductor heterostructure. Band offsets measured by BEES are in good agreement with previous measurements by other techniques which demonstrates the accuracy of this technique. BEES measurements atmore » 77 K give the same band-offset values as at room temperature. When a reverse bias is applied to the heterostructures, the BEES thresholds shift to lower voltages in good agreement with the expected bias-induced band-bending. In the indirect band-gap regime ({ital x}{gt}0.45), spectra show a weak ballistic-electron-emission microscopy current contribution due to intervalley scattering through Al{sub x}Ga{sub 1{minus}x}As {ital X} valley states. Low-temperature spectra show a marked reduction in this intervalley current component, indicating that intervalley phonon scattering at the GaAs/Al{sub x}Ga{sub 1{minus}x}As interface produces a significant fraction of this{ital X} valley current. A comparison of the BEES thresholds with the expected composition dependence of the Al{sub x}Ga{sub 1{minus}x}As {Gamma}, {ital L}, and {ital X} points yields good agreement over the entire composition range. {copyright} {ital 1997} {ital The American Physical Society}« less

Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

PubMed

Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

2013-01-01

A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PubMed Central

Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

2013-01-01

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.

PubMed

Wang, Ruijun; Sprengel, Stephan; Boehm, Gerhard; Muneeb, Muhammad; Baets, Roel; Amann, Markus-Christian; Roelkens, Gunther

2016-09-05

Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm² and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm² in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.

System and method for quench and over-current protection of superconductor

DOEpatents

Huang, Xianrui; Laskaris, Evangelos Trifon; Sivasubramaniam, Kiruba Haran; Bray, James William; Ryan, David Thomas; Fogarty, James Michael; Steinbach, Albert Eugene

2005-05-31

A system and method for protecting a superconductor. The system may comprise a current sensor operable to detect a current flowing through the superconductor. The system may comprise a coolant temperature sensor operable to detect the temperature of a cryogenic coolant used to cool the superconductor to a superconductive state. The control circuit is operable to estimate the superconductor temperature based on the current flow and the coolant temperature. The system may also be operable to compare the estimated superconductor temperature to at least one threshold temperature and to initiate a corrective action when the superconductor temperature exceeds the at least one threshold temperature.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Bonding temperature dependence of GaInAsP/InP laser diode grown on hydrophilically directly bonded InP/Si substrate

NASA Astrophysics Data System (ADS)

Aikawa, Masaki; Onuki, Yuya; Hayasaka, Natsuki; Nishiyama, Tetsuo; Kamada, Naoki; Han, Xu; Kallarasan Periyanayagam, Gandhi; Uchida, Kazuki; Sugiyama, Hirokazu; Shimomura, Kazuhiko

2018-02-01

The bonding-temperature-dependent lasing characteristics of 1.5 a µm GaInAsP laser diode (LD) grown on a directly bonded InP/Si substrate were successfully obtained. We have fabricated the InP/Si substrate using a direct hydrophilic wafer bonding technique at bonding temperatures of 350, 400, and 450 °C, and deposited GaInAsP/InP double heterostructure layers on this InP/Si substrate. The surface conditions, X-ray diffraction (XRD) analysis, photoluminescence (PL) spectra, and electrical characteristics after the growth were compared at these bonding temperatures. No significant differences were confirmed in X-ray diffraction analysis and PL spectra at these bonding temperatures. We realized the room-temperature lasing of the GaInAsP LD on the InP/Si substrate bonded at 350 and 400 °C. The threshold current densities were 4.65 kA/cm2 at 350 °C and 4.38 kA/cm2 at 400 °C. The electrical resistance was found to increase with annealing temperature.

Photoemission experiments of a large area scandate dispenser cathode

NASA Astrophysics Data System (ADS)

Zhang, Huang; Liu, Xing-guang; Chen, Yi; Chen, De-biao; Jiang, Xiao-guo; Yang, An-min; Xia, Lian-sheng; Zhang, Kai-zhi; Shi, Jin-shui; Zhang, Lin-wen

2010-09-01

A 100-mm-diameter scandate dispenser cathode was tested as a photocathode with a 10 ns Nd:YAG laser (266 nm) on an injector test stand for linear induction accelerators. This thermionic dispenser cathode worked at temperatures ranging from room temperature to 930 °C (below or near the thermionic emission threshold) while the vacuum was better than 4×10 -7 Torr. The laser pulse was synchronized with a 120 ns diode voltage pulse stably and they were in single pulse mode. Emission currents were measured by a Faraday cup. The maximum peak current collected at the anode was about 100 A. The maximum quantum efficiency measured at low laser power was 2.4×10 -4. Poisoning effect due to residual gas was obvious and uninterrupted heating was needed to keep cathode's emission capability. The cathode was exposed to air one time between experiments and recovered after being reconditioned. Photoemission uniformity of the cathode was also explored by changing the laser spot's position.

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

PubMed Central

Shim, Jaewoo; Oh, Seyong; Kang, Dong-Ho; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jaeho; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin-Hong

2016-01-01

Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research. PMID:27819264

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

NASA Astrophysics Data System (ADS)

Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

2015-02-01

We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

On-site chemical pre-lithiation of S cathode at room temperature on a 3D nano-structured current collector

NASA Astrophysics Data System (ADS)

Wu, Yunwen; Momma, Toshiyuki; Ahn, Seongki; Yokoshima, Tokihiko; Nara, Hiroki; Osaka, Tetsuya

2017-10-01

This work reports a new chemical pre-lithiation method to fabricate lithium sulfide (Li2S) cathode. This pre-lithiation process is taken place simply by dropping the organolithium reagent lithium naphthalenide (Li+Naph-) on the prepared sulfur cathode. It is the first time realizing the room temperature chemical pre-lithaition reaction attributed by the 3D nanostructured carbon nanotube (CNT) current collector. It is confirmed that the Li2S cathode fabricated at room temperature showing higher capacity and lower hysteresis than the Li2S cathode fabricated at high temperature pre-lithiation. The pre-lithiated Li2S cathode at room temperature shows stable cycling performance with a 600 mAh g-1 capacity after 100 cycles at 0.1 C-rate and high capacity of 500 mAh g-1 at 2 C-rate. This simple on-site pre-lithiation method at room temperature is demonstrated to be applicable for the in-situ pre-lithiation in a Li metal free battery.

2.07-micron CW diode-laser-pumped Tm,Ho:YLiF4 room-temperature

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1989-01-01

Continuous-wave action is obtained at 2.07 microns from a 2-mm-long Tm-sensitized Ho:YLiF4 crystal at room temperature when longitudinally pumped by a pair of diode-laser arrays. Laser output power at 300 K is 26 mW, with a 30-percent slope efficiency and a lasing threshold of 108 mW. A maximum output power of 187 mW is obtained from a 4-mm-long crystal at 77 K, with a 67 percent slope efficiency. A preliminary demonstration of cavity Q switching produced 165 microJ of pulse energy at a repetition rate of 100 Hz.

1300 nm optically pumped quantum dot spin vertical external-cavity surface-emitting laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alharthi, S. S., E-mail: ssmalh@essex.ac.uk; Henning, I. D.; Adams, M. J.

We report a room temperature optically pumped Quantum Dot-based Spin-Vertical-External-Cavity Surface-Emitting laser (QD Spin-VECSEL) operating at the telecom wavelength of 1.3 μm. The active medium was composed of 5 × 3 QD layers; each threefold group was positioned at an antinode of the standing wave of the optical field. Circularly polarized lasing in the QD-VECSEL under Continuous-Wave optical pumping has been realized with a threshold pump power of 11 mW. We further demonstrate at room temperature control of the QD-VECSEL output polarization ellipticity via the pump polarization.

Doping Nitrogen in InGaZnO Thin Film Transistor with Double Layer Channel Structure.

PubMed

Chang, Sheng-Po; Shan, Deng

2018-04-01

This paper presents the electrical characteristics of doping nitrogen in an amorphous InGaZnO thin film transistor. The IGZO:N film, which acted as a channel layer, was deposited using RF sputtering with a nitrogen and argon gas mixture at room temperature. The optimized parameters of the IGZO:N/IGZO TFT are as follows: threshold voltage is 0.5 V, field effect mobility is 14.34 cm2V-1S-1. The on/off current ratio is 106 and subthreshold swing is 1.48 V/decade. The positive gate bias stress stability of InGaZnO doping with nitrogen shows improvement compared to doping with oxygen.

The fragmentation threshold and implications for explosive eruptions

NASA Astrophysics Data System (ADS)

Kennedy, B.; Spieler, O.; Kueppers, U.; Scheu, B.; Mueller, S.; Taddeucci, J.; Dingwell, D.

2003-04-01

The fragmentation threshold is the minimum pressure differential required to cause a porous volcanic rock to form pyroclasts. This is a critical parameter when considering the shift from effusive to explosive eruptions. We fragmented a variety of natural volcanic rock samples at room temperature (20oC) and high temperature (850oC) using a shock tube modified after Aldibirov and Dingwell (1996). This apparatus creates a pressure differential which drives fragmentation. Pressurized gas in the vesicles of the rock suddenly expands, blowing the sample apart. For this reason, the porosity is the primary control on the fragmentation threshold. On a graph of porosity against fragmentation threshold, our results from a variety of natural samples at both low and high temperatures all plot on the same curve and show the threshold increasing steeply at low porosities. A sharp decrease in the fragmentation threshold occurs as porosity increases from 0- 15%, while a more gradual decrease is seen from 15- 85%. The high temperature experiments form a curve with less variability than the low temperature experiments. For this reason, we have chosen to model the high temperature thresholds. The curve can be roughly predicted by the tensile strength of glass (140 MPa) divided by the porosity. Fractured phenocrysts in the majority of our samples reduces the overall strength of the sample. For this reason, the threshold values can be more accurately predicted by % matrix x the tensile strength/ porosity. At very high porosities the fragmentation threshold varies significantly due to the effect of bubble shape and size distributions on the permeability (Mueller et al, 2003). For example, high thresholds are seen for samples with very high permeabilities, where gas flow reduces the local pressure differential. These results allow us to predict the fragmentation threshold for any volcanic rock for which the porosity and crystal contents are known. During explosive eruptions, the fragmentation threshold may be exceeded in two ways: (1) by building an overpressure within the vesicles above the fragmentation threshold or (2) by unloading and exposing lithostatically pressurised magma to lower pressures. Using this data, we can in principle estimate the height of dome collapse or amount of overpressure necessary to produce an explosive eruption.

Hypersensitivity to Cold Stimuli in Symptomatic Contact Lens Wearers

PubMed Central

Situ, Ping; Simpson, Trefford; Begley, Carolyn

2016-01-01

Purpose To examine the cooling thresholds and the estimated sensation magnitude at stimulus detection in controls and symptomatic and asymptomatic contact lens (CL) wearers, in order to determine whether detection thresholds depend on the presence of symptoms of dryness and discomfort. Methods 49 adapted CL wearers and 15 non-lens wearing controls had room temperature pneumatic thresholds measured using a custom Belmonte esthesiometer, during Visits 1 and 2 (Baseline CL), Visit 3 (2 weeks no CL wear) and Visit 4 (2 weeks after resuming CL wear). CL wearers were subdivided into symptomatic and asymptomatic groups based on comfortable wearing time (CWT) and CLDEQ-8 score (<8 hours CWT and ≥14 CLDEQ-8 stratified the symptom groups). Detection thresholds were estimated using an ascending method of limits and each threshold was the average of the three first-reported flow rates. The magnitude of intensity, coolness, irritation and pain at detection of the stimulus were estimated using a 1-100 scale (1 very mild, 100 very strong). Results In all measurement conditions, the symptomatic CL wearers were the most sensitive, the asymptomatic CL wearers were the least sensitive and the control group was between the two CL wearing groups (group factor p < 0.001, post hoc asymptomatic vs. symptomatic group, all p’s < 0.015). Similar patterns were found for the estimated magnitude of intensity and irritation (group effect p=0.027 and 0.006 for intensity and irritation, respectively) but not for cooling (p>0.05) at detection threshold. Conclusions Symptomatic CL wearers have higher cold detection sensitivity and report greater intensity and irritation sensation at stimulus detection than the asymptomatic wearers. Room temperature pneumatic esthesiometry may help to better understand the process of sensory adaptation to CL wear. PMID:27046090

Flaw Growth of 6Al-4V Titanium in a Freon TF Environment

NASA Technical Reports Server (NTRS)

Tiffany, C. F.; Masters, J. N.; Bixler, W. D.

1969-01-01

The plane strain threshold stress intensity and sustained stress flaw growth rates were experimentally determined for 6AI-4V S.T.A. titanium forging and weldments in environments of Freon TF at room temperature. Sustained load tests of surface flawed specimens were conducted with the experimental approach based on linear elastic fracture mechanics. It was concluded that sustained stress flaw growth rates, in conjunction with threshold stress intensities, can be used in assessing the service life of pressure vessels.

Perceiving nasal patency through mucosal cooling rather than air temperature or nasal resistance.

PubMed

Zhao, Kai; Blacker, Kara; Luo, Yuehao; Bryant, Bruce; Jiang, Jianbo

2011-01-01

Adequate perception of nasal airflow (i.e., nasal patency) is an important consideration for patients with nasal sinus diseases. The perception of a lack of nasal patency becomes the primary symptom that drives these patients to seek medical treatment. However, clinical assessment of nasal patency remains a challenge because we lack objective measurements that correlate well with what patients perceive. The current study examined factors that may influence perceived patency, including air temperature, humidity, mucosal cooling, nasal resistance, and trigeminal sensitivity. Forty-four healthy subjects rated nasal patency while sampling air from three facial exposure boxes that were ventilated with untreated room air, cold air, and dry air, respectively. In all conditions, air temperature and relative humidity inside each box were recorded with sensors connected to a computer. Nasal resistance and minimum airway cross-sectional area (MCA) were measured using rhinomanometry and acoustic rhinometry, respectively. General trigeminal sensitivity was assessed through lateralization thresholds to butanol. No significant correlation was found between perceived patency and nasal resistance or MCA. In contrast, air temperature, humidity, and butanol threshold combined significantly contributed to the ratings of patency, with mucosal cooling (heat loss) being the most heavily weighted predictor. Air humidity significantly influences perceived patency, suggesting that mucosal cooling rather than air temperature alone provides the trigeminal sensation that results in perception of patency. The dynamic cooling between the airstream and the mucosal wall may be quantified experimentally or computationally and could potentially lead to a new clinical evaluation tool.

Perceiving Nasal Patency through Mucosal Cooling Rather than Air Temperature or Nasal Resistance

PubMed Central

Zhao, Kai; Blacker, Kara; Luo, Yuehao; Bryant, Bruce; Jiang, Jianbo

2011-01-01

Adequate perception of nasal airflow (i.e., nasal patency) is an important consideration for patients with nasal sinus diseases. The perception of a lack of nasal patency becomes the primary symptom that drives these patients to seek medical treatment. However, clinical assessment of nasal patency remains a challenge because we lack objective measurements that correlate well with what patients perceive.The current study examined factors that may influence perceived patency, including air temperature, humidity, mucosal cooling, nasal resistance, and trigeminal sensitivity. Forty-four healthy subjects rated nasal patency while sampling air from three facial exposure boxes that were ventilated with untreated room air, cold air, and dry air, respectively. In all conditions, air temperature and relative humidity inside each box were recorded with sensors connected to a computer. Nasal resistance and minimum airway cross-sectional area (MCA) were measured using rhinomanometry and acoustic rhinometry, respectively. General trigeminal sensitivity was assessed through lateralization thresholds to butanol. No significant correlation was found between perceived patency and nasal resistance or MCA. In contrast, air temperature, humidity, and butanol threshold combined significantly contributed to the ratings of patency, with mucosal cooling (heat loss) being the most heavily weighted predictor. Air humidity significantly influences perceived patency, suggesting that mucosal cooling rather than air temperature alone provides the trigeminal sensation that results in perception of patency. The dynamic cooling between the airstream and the mucosal wall may be quantified experimentally or computationally and could potentially lead to a new clinical evaluation tool. PMID:22022361

The interaction effects of temperature and humidity on emergency room visits for respiratory diseases in Beijing, China.

PubMed

Su, Qin; Liu, Hongsheng; Yuan, Xiaoling; Xiao, Yan; Zhang, Xian; Sun, Rongju; Dang, Wei; Zhang, Jianbo; Qin, Yuhong; Men, Baozhong; Zhao, Xiaodong

2014-11-01

Few epidemiological studies have been reported as to whether there was any interactive effect between temperature and humidity on respiratory morbidity, especially in Asian countries. The present study used time-series analysis to explore the modification effects of humidity on the association between temperature and emergency room (ER) visits for respiratory, upper respiratory tract infection (URI), pneumonia, and bronchitis in Beijing between 2009 and 2011. Results showed that an obvious joint effect of temperature and humidity was revealed on ER visits for respiratory, URI, pneumonia, and bronchitis. Below temperature threshold, the temperature effect was stronger in low humidity level and presented a trend fall with humidity level increase. The effect estimates per 1 °C increase in temperature in low humidity level were -2.88 % (95 % confidence interval (CI) -3.08, -2.67) for all respiratory, -3.24 % (-3.59, -2.88) for URI, -1.48 % (-1.93, -1.03) for pneumonia, and -3.79 % (-4.37, -3.21) for bronchitis ER visits, respectively. However, above temperature threshold, temperature effect was greater in high humidity level and trending upward with humidity level increasing. In high humidity level, a 1 °C increase in temperature, the effect estimates were 1.84 % (1.55, 2.13) for all respiratory, 1.76 % (1.41, 2.11) for URI, and 7.48 % (4.41, 10.65) for bronchitis ER visits. But, there was no statistically significant for pneumonia. This suggests that the modifying effects of the humidity should be considered when analyzing health impacts of temperature.

Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping

NASA Astrophysics Data System (ADS)

Maddox, S. J.; Sun, W.; Lu, Z.; Nair, H. P.; Campbell, J. C.; Bank, S. R.

2012-10-01

We reduced the room temperature dark current in an InAs avalanche photodiode by increasing the p-type contact doping, resulting in an increased energetic barrier to minority electron injection into the p-region, which is a significant source of dark current at room temperature. In addition, by improving the molecular beam epitaxy growth conditions, we reduced the background doping concentration and realized depletion widths as wide as 5 μm at reverse biases as low as 1.5 V. These improvements culminated in low-noise InAs avalanche photodiodes exhibiting a room temperature multiplication gain of ˜80, at a record low reverse bias of 12 V.

Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

NASA Astrophysics Data System (ADS)

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

2018-02-01

In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6 μm and 12 μm). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33 V, sub-threshold swings of 13.5 & 12.8 V/dec for channel lengths of 6 μm and 12 μm TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; Thrall, Crystal; O'Neal, Sean; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-10-01

Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density ( 7.56 g/cm3), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at - 20°C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

FIB and CVD Fabrication of Carbon Nanostructures on Diamond and Quartz Substrates

DTIC Science & Technology

2011-03-29

reveal non-linear conductivity, current injection trough insulating diamond, bistability of current flow, and coulomb blockade at room temperature...insulating diamond, bistability of current flow, and coulomb blockade at room temperature. Also we developed methods of fabrication of large uniform...T. Midletton, A. De Stefano, "Characterization of Pink Diamonds of Different Origin: Natural from Argyle, Irradiated, HPHT treated, Treated with

A randomised single blinded study of the administration of pre-warmed fluid vs active fluid warming on the incidence of peri-operative hypothermia in short surgical procedures.

PubMed

Andrzejowski, J C; Turnbull, D; Nandakumar, A; Gowthaman, S; Eapen, G

2010-09-01

We compared the effect of delivering fluid warmed using two methods in 76 adult patients having short duration surgery. All patients received a litre of crystalloid delivered either at room temperature, warmed using an in-line warming device or pre-warmed in a warming cabinet for at least 8 h. The tympanic temperature of those receiving fluid at room temperature was 0.4 °C lower on arrival in recovery when compared with those receiving fluid from a warming cabinet (p = 0.008). Core temperature was below the hypothermic threshold of 36.0 °C in seven (14%) patients receiving either type of warm fluid, compared to eight (32%) patients receiving fluid at room temperature (p = 0.03). The administration of 1 l warmed fluid to patients having short duration general anaesthesia results in higher postoperative temperatures. Pre-warmed fluid, administered within 30 min of its removal from a warming cabinet, is as efficient at preventing peri-operative hypothermia as that delivered through an in-line warming system. © 2010 The Authors. Journal compilation © 2010 The Association of Anaesthetists of Great Britain and Ireland.

Lithographically Defined, Room Temperature Low Threshold Subwavelength Red-Emitting Hybrid Plasmonic Lasers.

PubMed

Liu, Ning; Gocalinska, Agnieszka; Justice, John; Gity, Farzan; Povey, Ian; McCarthy, Brendan; Pemble, Martyn; Pelucchi, Emanuele; Wei, Hong; Silien, Christophe; Xu, Hongxing; Corbett, Brian

2016-12-14

Hybrid plasmonic lasers provide deep subwavelength optical confinement, strongly enhanced light-matter interaction and together with nanoscale footprint promise new applications in optical communication, biosensing, and photolithography. The subwavelength hybrid plasmonic lasers reported so far often use bottom-up grown nanowires, nanorods, and nanosquares, making it difficult to integrate these devices into industry-relevant high density plasmonic circuits. Here, we report the first experimental demonstration of AlGaInP based, red-emitting hybrid plasmonic lasers at room temperature using lithography based fabrication processes. Resonant cavities with deep subwavelength 2D and 3D mode confinement of λ 2 /56 and λ 3 /199, respectively, are demonstrated. A range of cavity geometries (waveguides, rings, squares, and disks) show very low lasing thresholds of 0.6-1.8 mJ/cm 2 with wide gain bandwidth (610 nm-685 nm), which are attributed to the heterogeneous geometry of the gain material, the optimized etching technique, and the strong overlap of the gain material with the plasmonic modes. Most importantly, we establish the connection between mode confinements and enhanced absorption and stimulated emission, which plays critical roles in maintaining low lasing thresholds at extremely small hybrid plasmonic cavities. Our results pave the way for the further integration of dense arrays of hybrid plasmonic lasers with optical and electronic technology platforms.

Stable room temperature magnetocurrent in electrodeposited permeable n-type metal base transistor

NASA Astrophysics Data System (ADS)

Silva, G. V. O.; Teixeira, H. A.; Mello, S. L. A.; de Araujo, C. I. L.

2018-02-01

We investigated a permeable metal base transistor consisting of a ZnO/NiFe/Si heterostructure. Both ZnO and NiFe layers were grown by electrodeposition techniques, using only adhesive tape masks to define deposition regions. The base permeability can thus be controlled by varying the NiFe deposition time. We report here our best results obtained for the permeable NiFe base close to the electrical percolation threshold, which gives reasonable sensitivity to the device. Magnetocurrent measurements carried out at room temperature show that this permeable metal base transistor is stable and sensitive under applied magnetic fields of low intensities, ˜100 Oe, required for electronics integration.

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.

1980-01-01

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature.

PubMed

Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie S; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, Gavin J; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2018-04-11

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6 kW/cm 2 (75 μJ/cm 2 per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of ∼129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.

Synthesis of a metal oxide with a room-temperature photoreversible phase transition.

PubMed

Ohkoshi, Shin-Ichi; Tsunobuchi, Yoshihide; Matsuda, Tomoyuki; Hashimoto, Kazuhito; Namai, Asuka; Hakoe, Fumiyoshi; Tokoro, Hiroko

2010-07-01

Photoinduced phase-transition materials, such as chalcogenides, spin-crossover complexes, photochromic organic compounds and charge-transfer materials, are of interest because of their application to optical data storage. Here we report a photoreversible metal-semiconductor phase transition at room temperature with a unique phase of Ti(3)O(5), lambda-Ti(3)O(5). lambda-Ti(3)O(5) nanocrystals are made by the combination of reverse-micelle and sol-gel techniques. Thermodynamic analysis suggests that the photoinduced phase transition originates from a particular state of lambda-Ti(3)O(5) trapped at a thermodynamic local energy minimum. Light irradiation causes reversible switching between this trapped state (lambda-Ti(3)O(5)) and the other energy-minimum state (beta-Ti(3)O(5)), both of which are persistent phases. This is the first demonstration of a photorewritable phenomenon at room temperature in a metal oxide. lambda-Ti(3)O(5) satisfies the operation conditions required for a practical optical storage system (operational temperature, writing data by short wavelength light and the appropriate threshold laser power).

Fatigue threshold studies in Fe, Fe-Si, and HSLA steel: Part II. thermally activated behavior of the effective stress intensity at threshold

NASA Astrophysics Data System (ADS)

Yu, W.; Esaklul, K.; Gerberich, W. W.

1984-05-01

It is shown that closure mechanisms alone cannot fully explain increasing fatigue thresholds with decreasing test temperature for a sequence of Fe-Si binary alloys and an HSLA steel. Implications are that fatigue crack propagation near threshold is a thermally activated process. The effective threshold stress intensity, which was obtained by subtracting the closure portion from the fatigue threshold, was examined. This effective stress intensity was found to correlate very well to the thermal component of the flow stress. A detailed fractographic study of the fatigue surface was performed. Water vapor in the room air was found to promote the formation of oxide and intergranular crack growth. At lower temperature, a brittle-type cyclic cleavage fatigue surface was observed but the ductile process persisted even at 123 K. Arrest marks were found on all three modes of fatigue crack growth. The regular spacings between these lines and dislocation modeling suggested that fatigue crack growth was controlled by the subcell structure near threshold. A model based on the slip-off of dislocations was examined. From this, it is shown that the effective fatigue threshold may be related to the square root of (one plus the strain rate sensitivity).

Thermoregulation and thermal perception in the cold and heat before and after intermittent heat adaptation

NASA Astrophysics Data System (ADS)

Issing, K.; Fuhr, E.

1986-09-01

Students wearing swim suits were exposed for 30 min to neutral room temperature (TR=28‡C). During the following 60 min they were subjected to gradual decreases or increases of room temperature reaching 12‡C or 45‡C, respectively. Static thermal stimuli were applied to the palms of the right (38‡C) and left (25‡C) hands. Hands and feet of all subjects were thermally isolated at 22‡C ambient temperature. General thermal comfort (GTC), local thermal comfort (LTC), skin blood flow (which is proportional to heat transport index λ) several body temperatures, oxygen-consumption(dot V_{O_2 } ), and sweat rate (S), were measured. After moderate intermittent heat exposures (7 times for 1h at TR=42.5‡C) the experiments started again. From GTC, LTC, or λ as functions of TR, no new knowledge about thermoregulatory or adaptive mechanisms was available. The high λ in the cold stimulated left hand, however, and the oscillatory thresholds (λOSC) for rhythmic vasomotion indicated the peripheral influence of skin temperature, as well as local, mean skin temperature (¯Ts) and core temperature. When exposed to moderate temperature decreases or increases the body seems to react only with increasing thermal resistance by vasoconstriction or an increase of sweat rate, respectively. Moderate heat adaptation is only able to raise sweat rate, but not the thresholds and gain of the S-function. We assume that functional studies of adaptive modifications in humans must be conducted at temperatures greatly beyond those used in these experiments.

Apparatus for measurement of critical current in superconductive tapes

DOEpatents

Coulter, J. Yates; DePaula, Raymond

2002-01-01

A cryogenic linear positioner which is primarily used for characterizing coated conductor critical current homogeneity at 75K is disclosed. Additionally, this tool can be used to measure the positional dependence of the coated conductor resistance at room temperature, and the room temperature resistance of the underlying YBCB coating without the overlaying protective cover of silver.

Temperature dependence of tris(2,2'-bipyridine) ruthenium (II) device characteristics

NASA Astrophysics Data System (ADS)

Slinker, Jason D.; Malliaras, George G.; Flores-Torres, Samuel; Abruña, Héctor D.; Chunwachirasiri, Withoon; Winokur, Michael J.

2004-04-01

We have investigated the temperature dependence of the current, radiance, and efficiency from electroluminescent devices based on [Ru(bpy)3]2+(PF6-)2, where bpy is 2,2'-bipyridine. We find that the current increases monotonically with temperature from 200 to 380 K, while the radiance reaches a maximum near room temperature. For temperatures greater than room temperature, an irreversible, current-induced degradation occurs with thermal cycling that diminishes both the radiance and the photoluminescence (PL) quantum yield, but does not affect the current. The temperature dependence of the external quantum efficiency is fully accounted for by the dependence of the PL quantum yield as measured from the emissive area of the device. This implies that the contacts remain ohmic throughout the temperature range investigated. The quenching of the PL with temperature was attributed to thermal activation to a nonradiative d-d transition. The temperature dependence of the current shows a complex behavior in which transport appears to be thermally activated, with distinct low-temperature and high-temperature regimes.

New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane

NASA Astrophysics Data System (ADS)

Lee, Jae-Hoon; Park, Sang-Geun; Jeon, Jae-Hong; Goh, Joon-chul; Huh, Jong-moo; Choi, Joonhoo; Chung, Kyuha; Han, Min-Koo

2007-03-01

We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 μA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress Vth shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing.

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.; Gilbert, D. B.

1981-01-01

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Terahertz electrical writing speed in an antiferromagnetic memory

PubMed Central

Kašpar, Zdeněk; Campion, Richard P.; Baumgartner, Manuel; Sinova, Jairo; Kužel, Petr; Müller, Melanie; Kampfrath, Tobias

2018-01-01

The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band. PMID:29740601

Synthesis of Novel Sea-Urchin-Like CdS and Their Optical Properties.

PubMed

Kamran, Muhammad Arshad; Liu, Ruibin; Shi, Li-Jie; Bukhtiar, Arfan; Li, Jing; Zou, Bingsuo

2015-06-01

A novel morphology of CdS sea-urchin-like microstructures is synthesized by simple thermal evaporation process. Microstructures with average size of 20-50 μm are composed of single crystalline CdS nanobelts. The structural, compositional, morphological characterization of the product were examined by X-ray diffraction, energy dispersive X-ray spectroscopy, Raman spectroscopy, scanning electron microscope, transmission electron microscopy and selected area electron diffraction while optical properties are investigated by Photoluminescence spectroscopy and time-resolved Photoluminescence measurements. The tentative growth mechanism for the growth of sea-urchin-like CdS is proposed and described briefly. A strong green emission with a maximum around 517 nm was observed from the individual CdS microstructure at room temperature, which was attributed to band-edge emission of CdS. These Novel structures exhibit excellent lasing (stimulated emission) with low threshold (9.07 μJ cm(-2)) at room temperature. We analyze the physical mechanism of stimulated emission. These results are important in the design of green luminescence, low-threshold laser and display devices in the future.

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

NASA Astrophysics Data System (ADS)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.

Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.

1982-01-01

Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers.

PubMed

Auton, Gregory; But, Dmytro B; Zhang, Jiawei; Hill, Ernie; Coquillat, Dominique; Consejo, Christophe; Nouvel, Philippe; Knap, Wojciech; Varani, Luca; Teppe, Frederic; Torres, Jeremie; Song, Aimin

2017-11-08

A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm 2 ) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz -1/2 at room temperature with no indications of a cutoff frequency up to 0.45 THz. The device also demonstrates a linear response for more than 3 orders of magnitude of input power due to its zero threshold voltage, quadratic current-voltage characteristics and high saturation current. Finally, the device is used to take an image of an optically opaque object at 0.685 THz, demonstrating potential in both medical and security imaging applications.

Threshold irradiation dose for amorphization of silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snead, L.L.; Zinkle, S.J.

1997-04-01

The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenonmore » ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.« less

Quality of red blood cells isolated from umbilical cord blood stored at room temperature.

PubMed

Zhurova, Mariia; Akabutu, John; Acker, Jason

2012-01-01

Red blood cells (RBCs) from cord blood contain fetal hemoglobin that is predominant in newborns and, therefore, may be more appropriate for neonatal transfusions than currently transfused adult RBCs. Post-collection, cord blood can be stored at room temperature for several days before it is processed for stem cells isolation, with little known about how these conditions affect currently discarded RBCs. The present study examined the effect of the duration cord blood spent at room temperature and other cord blood characteristics on cord RBC quality. RBCs were tested immediately after their isolation from cord blood using a broad panel of quality assays. No significant decrease in cord RBC quality was observed during the first 65 hours of storage at room temperature. The ratio of cord blood to anticoagulant was associated with RBC quality and needs to be optimized in future. This knowledge will assist in future development of cord RBC transfusion product.

Electric field modulated ferromagnetism in ZnO films deposited at room temperature

NASA Astrophysics Data System (ADS)

Bu, Jianpei; Liu, Xinran; Hao, Yanming; Zhou, Guangjun; Cheng, Bin; Huang, Wei; Xie, Jihao; Zhang, Heng; Qin, Hongwei; Hu, Jifan

2018-04-01

The ZnO film deposited at room temperature, which is composed of the amorphous-phase background plus a few nanograins or nanoclusters (about 1-2 nm), exhibits room temperature ferromagnetism (FM). Such FM is found to be connected with oxygen vacancies. For the Ta/ZnO/Pt device based on the medium layer ZnO deposited at room temperature, the saturation magnetization not only is modulated between high and low resistive states by electric voltage with DC loop electric current but also increases/decreases through adjusting the magnitudes of positive/negative DC sweeping voltage. Meanwhile, the voltage-controlled conductance quantization is observed in Ta/ZnO/Pt, accompanying the voltage-controlled magnetization. However, the saturation magnetization of the Ta/ZnO/Pt device becomes smaller under positive electric voltage and returns in some extent under negative electric voltage, when the DC loop electric current is not applied.

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

PubMed Central

Liu, CY; Sun, ZZ; Yew, KC

2006-01-01

Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

Room temperature current injection polariton light emitting diode with a hybrid microcavity.

PubMed

Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

2011-07-13

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

Pressure-induced oligomerization of benzene at room temperature as a precursory reaction of amorphization.

PubMed

Shinozaki, Ayako; Mimura, Koichi; Kagi, Hiroyuki; Komatu, Kazuki; Noguchi, Naoki; Gotou, Hirotada

2014-08-28

Oligomerization of benzene at high pressures up to 16 GPa was investigated at room temperature using an opposed-anvil type pressure apparatus. The recovered samples were analyzed using GC-MS to identify and quantify the products after the high-pressure experiments. Some structural isomers of benzene dimer as well as biphenyl, naphthalene, and terphenyl isomers were detected at pressures higher than 13 GPa. The molar yield of the polycyclic aromatic hydrocarbons increased concomitantly with increasing pressure, although benzene still remained. The oligomerization is likely to occur when the neighbor distance of the benzene molecules exceeds the threshold of the reaction distance. The oligomerization is regarded as a precursory phenomenon of the amorphization that occurs at higher pressure.

Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yiyun; Ma, Zetao; Zhang, Xuhui

2014-06-02

2-μm micro-disks containing InGaN/GaN quantum wells supported on a tiny Si nanotip are fabricated via microsphere lithography followed by dry and wet etch processes. The micro-disks are studied by photoluminescence at both room-temperature and 10 K. Optically pumped blue lasing at room-temperature is observed via whispering-gallery modes (WGMs) with a lasing threshold as low as 8.43 mJ/cm{sup 2}. Optical resonances in the micro-disks are studied through numerical computations and finite-difference time-domain simulations. The WGMs are further confirmed through the measured broadband transmission spectrum, whose transmission minima coincide well with predicted WGM frequencies.

Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

PubMed

Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

2013-12-13

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

PubMed

Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

2014-05-01

To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

Local Magnetic Measurements of Trapped Flux Through a Permanent Current Path in Graphite

NASA Astrophysics Data System (ADS)

Stiller, Markus; Esquinazi, Pablo D.; Quiquia, José Barzola; Precker, Christian E.

2018-04-01

Temperature- and field-dependent measurements of the electrical resistance of different natural graphite samples suggest the existence of superconductivity at room temperature in some regions of the samples. To verify whether dissipationless electrical currents are responsible for the trapped magnetic flux inferred from electrical resistance measurements, we localized them using magnetic force microscopy on a natural graphite sample in remanent state after applying a magnetic field. The obtained evidence indicates that at room temperature a permanent current flows at the border of the trapped flux region. The current path vanishes at the same transition temperature T_c≈ 370 K as the one obtained from electrical resistance measurements on the same sample. This sudden decrease in the phase is different from what is expected for a ferromagnetic material. Time-dependent measurements of the signal show the typical behavior of flux creep of a permanent current flowing in a superconductor. The overall results support the existence of room-temperature superconductivity at certain regions in the graphite structure and indicate that magnetic force microscopy is suitable to localize them. Magnetic coupling is excluded as origin of the observed phase signal.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode

DTIC Science & Technology

2011-11-15

nanocavity laser with world record low threshold of 208 nW based on a lateral p-i-n junction defined by ion implantation in gallium arsenide6. This...recombination effects are mini- mized. In contrast, at room temperature, thermal excitation of car- riers depopulates the quantum dots much quicker than does Pur

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

NASA Astrophysics Data System (ADS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge2Sb2Te5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

A PLGA-PEG-PLGA Thermosensitive Gel Enabling Sustained Delivery of Ropivacaine Hydrochloride for Postoperative Pain Relief.

PubMed

Fu, Xudong; Zeng, Huilin; Guo, Jiaping; Liu, Hong; Shi, Zhen; Chen, Huhai; Li, Dezong; Xie, Xiangyang; Kuang, Changchun

2017-01-01

Postoperative pain is a complex physiological response to disease and tissue injury. Moderate-to-severe pain typically occurs within 48 h after surgery. Amino amide local anesthetics are widely applied to manage postoperative pain, and they have high efficacy, a low risk for addiction and limited side effects. However, these anesthetics also have short half-lives, often necessitating continuous injection to obtain satisfactory pain relief. In the current work, we used a poly(lactic-co-glycolic acid) (PLGA)-polyethylene glycol (PEG)-PLGA (PLGA-PEG-PLGA) temperature-sensitive gel to deliver a local anesthetic, ropivacaine hydrochloride (RP), to prolong its analgesic effect. We investigated the influence of polymer and drug concentration on gelation temperature and the in vitro drug release rate from the temperature-sensitive gel. RP-loaded PLGA-PEG-PLGA solution is a liquid at room temperature and forms a gel at temperatures slightly lower than body temperature. With regard to the gel's drug release rate, 37.5, 51.3 and 72.6% of RP was released at 12, 24 and 48 h, respectively. This in vitro drug release profile conformed to the Higuchi equation. To assess pain control efficacy when using the gel, we evaluated the mechanical paw withdrawal reflex threshold, thermal pain threshold and incision cumulative pain scores in a rat incisional model. The results showed that the anti-pain effect of a single injection of RP-loaded gel at the incision site lasted for 48 h, which is significantly longer than the effect produced by injection of RP solution alone. The use of RP-loaded thermosensitive gels could provide a promising method for managing postoperative pain.

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

NASA Astrophysics Data System (ADS)

Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

2017-03-01

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature

NASA Astrophysics Data System (ADS)

Ren, Dingding; Ahtapodov, Lyubomir; Nilsen, Julie S.; Yang, Jianfeng; Gustafsson, Anders; Huh, Junghwan; Conibeer, Gavin J.; van Helvoort, Antonius T. J.; Fimland, Bjørn-Ove; Weman, Helge

2018-04-01

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance.

Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si

NASA Astrophysics Data System (ADS)

Castellano, A.; Cerutti, L.; Rodriguez, J. B.; Narcy, G.; Garreau, A.; Lelarge, F.; Tournié, E.

2017-06-01

We report on electrically pumped GaSb-based laser diodes monolithically grown on Si and operating in a continuous wave (cw) in the telecom wavelength range. The laser structures were grown by molecular-beam epitaxy on 6°-off (001) substrates. The devices were processed in coplanar contact geometry. 100 μm × 1 mm laser diodes exhibited a threshold current density of 1 kA/cm-2 measured under pulsed operation at 20 °C. CW operation was achieved up to 35 °C with 10 μm × 1 mm diodes. The output power at 20 °C was around 3 mW/uncoated facet, and the cw emission wavelength 1.59 μm, in the C/L-band of telecom systems.

Oxide-apertured VCSEL with short period superlattice

NASA Astrophysics Data System (ADS)

Li, Lin; Zhong, Jingchang; Zhang, Yongming; Su, Wei; Zhao, Yingjie; Yan, Changling; Hao, Yongqin; Jiang, Xiaoguang

2004-12-01

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al_(0.9)Ga_(0.1)As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2 deg. off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 (Celsius degree) and the threshold current increased slowly with the increase of temperature.

A Specimen Size Effect on the Fatigue Crack Growth Rate Threshold of IN 718

NASA Technical Reports Server (NTRS)

Garr, K. R.; Hresko, G. C., III

1998-01-01

Fatigue crack growth rate (FCGR) tests were conducted on IN 718 in the solution annealed and aged condition at room temperature in accordance with E647-87. As part of each test, the FCGR threshold was measured using the decreasing Delta K method. A new heat of material was being tested and some of this material was sent to a different laboratory which wanted to use a specimen with a 127 mm width. Threshold data previously had been established on specimens with a width of 50.8 mm. As a check of the laboratory, tests were conducted at room temperature and R equal to 0.1 for comparison with the earlier data. The results were a threshold significantly higher than previously observed. Interchanging of specimen sizes and laboratories showed that the results were not due to a heat-to-heat or lab-to-lab variation. The results to be presented here are those obtained at the original laboratory. Growth rates were measured using the electric potential drop technique at R values of 0.1, 0.7, and 0.9. Compact tension specimen sizes with planer dimensions of 25.4 mm, 50.8 mm, and 127 mm were used. Crack growth rates at threshold were generally below 2.5 X 10(exp -8) mm / cycle. Closure measurements were made on some of the specimens by a manual procedure using a clip gage. When the crack growth rate data for the specimens tested at R equal to 0.1 were plotted as a function of applied Delta K, the thresholds varied with specimen width. The larger the width, the higher the threshold. The thresholds varied from 6.5 MPa-m(exp 1/2) for the 25.4 mm specimen to 15.4 MPa-m(exp 1/2) for the 127 mm specimen. At R equal to 0.7, the 25.4 mm and 50.8 mm specimens had essentially the same threshold, about 2.9 MPa-m(exp 1/2)while the 127 mm specimen had a threshold of 4.5 MPa-m(exp 1/2). When plotted as a function of effective Delta K, the R equal to 0.1 data are essentially normalized. Various aspects of the test procedure will be discussed as well as the results of analysis of the data using some different closure models.

Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation

NASA Astrophysics Data System (ADS)

Katoh, Takumi; Matsumura, Ryo; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

To clarify the process of formation of source regions of high-performance Ge n-channel tunneling field-effect transistors (TFETs), p+-n junctions formed by low-energy ion implantation (I/I) of BF2 atoms are characterized. Here, the formation of p+-n junctions with steep B profiles and low junction leakage is a key issue. The steepness of 5.7 nm/dec in profiles of B implanted into Ge is obtained for BF2 I/I at 3 keV with a dose of 4 × 1014 cm-2. Ge-on-insulator (GOI) n-TFETs with the source tunnel junctions formed by low-energy B and BF2 I/I are fabricated on GOI substrates and the device operation is confirmed. Although the performance at room temperature is significantly degraded by the source junction leakage current, an I on/I off ratio of 105 and the minimum sub-threshold swing (S.S.) of 130 mV/dec are obtained at 10 K. It is found that GOI n-TFETs with steeper B profiles formed by BF2 I/I have led to higher on current and a lower sub-threshold slope, demonstrating the effectiveness of steep B profiles in enhancing the GOI TFET performance.

Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers

NASA Astrophysics Data System (ADS)

Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Kobayashi, Wataru; Taniyama, Hideaki; Notomi, Masaya; Hasebe, Koichi; Kakitsuka, Takaaki; Matsuo, Shinji

2013-07-01

A low operating energy is needed for nanocavity lasers designed for on-chip photonic network applications. On-chip nanocavity lasers must be driven by current because they act as light sources driven by electronic circuits. Here, we report the high-speed direct modulation of a lambda-scale embedded active region photonic-crystal (LEAP) laser that holds three records for any type of laser operated at room temperature: a low threshold current of 4.8 µA, a modulation current efficiency of 2.0 GHz µA-0.5 and an operating energy of 4.4 fJ bit-1. Five major technologies make this performance possible: a compact buried heterostructure, a photonic-crystal nanocavity, a lateral p-n junction realized by ion implantation and thermal diffusion, an InAlAs sacrificial layer and current-blocking trenches. We believe that an output power of 2.17 µW and an operating energy of 4.4 fJ bit-1 will enable us to realize on-chip photonic networks in combination with the recently developed highly sensitive receivers.

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing

2015-06-08

We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

Low-threshold photonic-band-edge laser using iron-nail-shaped rod array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jae-Hyuck; No, You-Shin; Hwang, Min-Soo

2014-03-03

We report the experimental demonstration of an optically pumped rod-type photonic-crystal band-edge laser. The structure consists of a 20 × 20 square lattice array of InGaAsP iron-nail-shaped rods. A single-mode lasing action is observed with a low threshold of ∼90 μW and a peak wavelength of 1451.5 nm at room temperature. Measurements of the polarization-resolved mode images and lasing wavelengths agree well with numerical simulations, which confirm that the observed lasing mode originates from the first Γ-point transverse-electric-like band-edge mode. We believe that this low-threshold band-edge laser will be useful for the practical implementation of nanolasers.

Preparation, characterization and electroluminescence studies of ZnO nanorods for optoelectronic device applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Anju, E-mail: singh-nk24@yahoo.com; Vishwakarma, H. L., E-mail: horilal5@yahoo.com

2015-07-31

In this work, ZnO nanorods were achieved by a simple chemical precipitation method in the presence of capping agent Poly Vinyl Pyrrolidone (PVP) at room temperature. X-Ray Diffraction (XRD) result indicates that the synthesized undoped ZnO nanorods have wurtzite hexagonal structure without any impurities. It has been seen that the growth orientation of the prepared ZnO nanorods were (101). XRD analysis revealed that the nanorods having the crystallite size 49 nm. The Scanning Electron Microscopy (SEM) image confirmed the size and shape of these nanorods. The diameter of nanorods has been found that 1.52 µm to 1.61 µm and the lengthmore » of about 4.89 µm. It has also been found that at room temperature Ultra Violet Visible (UV-VIS) absorption band is around 355 nm (blue shifted as compared to bulk). Electroluminescence (EL) studies show that emission of light is possible at very small threshold voltage and increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.« less

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

PubMed

Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

2017-02-08

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Nonpolar InGaN/GaN core–shell single nanowire lasers

DOE PAGES

Li, Changyi; Wright, Jeremy Benjamin; Liu, Sheng; ...

2017-01-24

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reducedmore » active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. Furthermore, the results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.« less

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers.

PubMed

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-05

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

NASA Astrophysics Data System (ADS)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Evaluation of a threshold-based model of fatigue in gamma titanium aluminide following impact damage

NASA Astrophysics Data System (ADS)

Harding, Trevor Scott

2000-10-01

Recent interest in gamma titanium aluminide (gamma-TiAl) for use in gas turbine engine applications has centered on the low density and good elevated temperature strength retention of gamma-TiAl compared to current materials. However, the relatively low ductility and fracture toughness of gamma-TiAl leads to serious concerns regarding its ability to resist impact damage. Furthermore, the limited fatigue crack growth resistance of gamma-TiAl means that the potential for fatigue failures resulting from impact damage is real if a damage tolerant design approach is used. A threshold-based design approach may be required if fatigue crack growth from potential impact sites is to be avoided. The objective of the present research is to examine the feasibility of a threshold-based approach for the design of a gamma-TiAl low-pressure turbine blade subjected to both assembly-related impact damage and foreign object damage. Specimens of three different gamma-TiAl alloys were damaged in such a way as to simulate anticipated impact damage for a turbine blade. Step-loading fatigue tests were conducted at both room temperature and 600°C. In terms of the assembly-related impact damage, the results indicate that there is reasonably good agreement between the threshold-based predictions of the fatigue strength of damaged specimens and the measured data. However, some discrepancies do exist. In the case of very lightly damaged specimens, prediction of the resulting fatigue strength requires that a very conservative small-crack fatigue threshold be used. Consequently, the allowable design conditions are significantly reduced. For severely damaged specimens, an analytical approach found that the potential effects of residual stresses may be related to the discrepancies observed between the threshold-based model and measured fatigue strength data. In the case of foreign object damage, a good correlation was observed between impacts resulting in large cracks and a long-crack threshold-based approximation of the fatigue strength. However, in the case of smaller impact sites, a lower small-crack threshold appears to be more appropriate. In some cases, a complete perforation of the material, or blowout, would result from the impact. Prediction of the reduction in fatigue strength resulting from this form of damage required the use of a stress concentration factor, rather than a threshold-based prediction.

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2006-01-01

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

NASA Astrophysics Data System (ADS)

Ristanic, Daniela; Schwarz, Benedikt; Reininger, Peter; Detz, Hermann; Zederbauer, Tobias; Andrews, Aaron Maxwell; Schrenk, Werner; Strasser, Gottfried

2015-01-01

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm-1 at 1586 cm-1. The room temperature laser threshold current density is 3 kA/cm2 and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.

Room-temperature magnetoelectric multiferroic thin films and applications thereof

DOEpatents

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Defining indoor heat thresholds for health in the UK.

PubMed

Anderson, Mindy; Carmichael, Catriona; Murray, Virginia; Dengel, Andy; Swainson, Michael

2013-05-01

It has been recognised that as outdoor ambient temperatures increase past a particular threshold, so do mortality/morbidity rates. However, similar thresholds for indoor temperatures have not yet been identified. Due to a warming climate, the non-sustainability of air conditioning as a solution, and the desire for more energy-efficient airtight homes, thresholds for indoor temperature should be defined as a public health issue. The aim of this paper is to outline the need for indoor heat thresholds and to establish if they can be identified. Our objectives include: describing how indoor temperature is measured; highlighting threshold measurements and indices; describing adaptation to heat; summary of the risk of susceptible groups to heat; reviewing the current evidence on the link between sleep, heat and health; exploring current heat and health warning systems and thresholds; exploring the built environment and the risk of overheating; and identifying the gaps in current knowledge and research. A global literature search of key databases was conducted using a pre-defined set of keywords to retrieve peer-reviewed and grey literature. The paper will apply the findings to the context of the UK. A summary of 96 articles, reports, government documents and textbooks were analysed and a gap analysis was conducted. Evidence on the effects of indoor heat on health implies that buildings are modifiers of the effect of climate on health outcomes. Personal exposure and place-based heat studies showed the most significant correlations between indoor heat and health outcomes. However, the data are sparse and inconclusive in terms of identifying evidence-based definitions for thresholds. Further research needs to be conducted in order to provide an evidence base for threshold determination. Indoor and outdoor heat are related but are different in terms of language and measurement. Future collaboration between the health and building sectors is needed to develop a common language and an index for indoor heat and health thresholds in a changing climate.

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

NASA Technical Reports Server (NTRS)

Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

2008-01-01

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Effects of repeated bending load at room temperature for composite Nb3Sn wires

NASA Astrophysics Data System (ADS)

Awaji, Satoshi; Watanabe, Kazuo; Katagiri, Kazumune

2003-09-01

In order to realize a react and wind (R&W) method for Nb3Sn wires, the influences of a bending load at room temperature are investigated. Usually, the superconducting wires undergo bending loads at room temperature repeatedly during winding and insulation processes. We define these bending loads as 'pre-bending' treatments. We applied the pre-bending strain of 0 and 0.5% to the highly strengthened CuNb/(Nb, Ti)3Sn wires, and measured the stress/strain properties and critical currents. The improvements of stress dependence of normalized critical current and the increase of the maximum critical current by the pre-bending treatments were found. The model based on the distribution of the local tensile strain as a bending strain describes the experimental results well without the increase of the maximum critical current. When the pre-bending strain was applied, the calculated results indicate that the mechanical properties are improved due to the local work hardening, and hence the stress dependence of Ic increases.

Room-temperature observation and current control of skyrmions in Pt/Co/Os/Pt thin films

NASA Astrophysics Data System (ADS)

Tolley, R.; Montoya, S. A.; Fullerton, E. E.

2018-04-01

We report the observation of room-temperature magnetic skyrmions in Pt/Co/Os/Pt thin-film heterostructures and their response to electric currents. The magnetic properties are extremely sensitive to inserting thin Os layers between the Co-Pt interface, resulting in reduced saturation magnetization, magnetic anisotropy, and Curie temperature. The observed skyrmions exist in a narrow temperature, applied-field and layer-thickness range near the spin-reorientation transition from perpendicular to in-plane magnetic anisotropy. The skyrmions have an average diameter of 2.3 μ m and transport measurements demonstrate these features can be displaced by means of spin-orbit torques with current densities as low as J =2 ×108A / m2 and display a skyrmion Hall effect.

Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Kucharska, A.I.; Foxon, C.T.

1989-09-18

Using quantum well laser devices with a window in the {ital p}-type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58-A-wide GaAs wells. Over the range 250--340 K the data are in good agreement with the linear relation obtained from a gain-current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel

2016-01-14

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current inmore » doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.« less

Threshold detection of boar taint chemicals using parasitic wasps.

PubMed

Olson, Dawn; Wäckers, Felix; Haugen, John-Erik

2012-10-01

Surgical castration has been long used to prevent consumers from experiencing taint in meat from male pigs, which is a large problem in the pig husbandry industry. Due to obvious animal welfare issues, the EU now wants an alternative for castration, suggesting an urgent need for novel methods of boar taint detection. As boar taint is only a problem when taint chemicals exceed a well-defined threshold, detection methods should be concentration-specific. The wasp, Microplitis croceipes' ability to learn and respond to particular concentrations of the boar taint compounds, skatole, androstenone, and indole was tested. Also tested was the wasps' ability to discriminate between known concentrations of indole, skatole, and androstenone in real boar fat samples at room temperature. Wasps were trained using associative learning by providing food-deprived wasps with sucrose-water in the presence of specific odor concentrations. Trained wasps' responses were tested to a range of concentrations of 3 compounds. Wasps showed unidirectional generalization of learned concentration responses, whereby the direction of concentration generalization was shown to be chemical-dependent. Through both positive (sucrose) and negative feeding experiences (water only) with varying compound concentrations, the wasps can also be conditioned to respond to concentrations exceeding a defined threshold, and they were successful in reporting low, medium, and high concentrations of indole, skatole, and androstenone in boar fat at room temperature. The need for threshold detection rather than simple detection of absence/presence applies to many food quality issues, including the detection of spoilage or pest damage in crops or stored foods. An inexpensive and reliable means of detecting boar tainted pork at slaughter to avoid tainted meat on the market and dissatisfied consumers. Journal of Food Science © 2012 Institute of Food Technologists® No claim to original US government works.

Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates.

PubMed

Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon

2018-03-05

In this paper, InAs 0.81 Sb 0.19 -based hetero-junction photovoltaic detector (HJPD) with an In 0.2 Al 0.8 Sb barrier layer was grown on GaAs substrates. By using technology computer aided design (TCAD), a design of a barrier layer that can achieve nearly zero valance band offsets was accomplished. A high quality InAs 0.81 Sb 0.19 epitaxial layer was obtained with relatively low threading dislocation density (TDD), calculated from a high-resolution X-ray diffraction (XRD) measurement. This layer showed a Hall mobility of 15,000 cm 2 /V⋅s, which is the highest mobility among InAsSb layers with an Sb composition of around 20% grown on GaAs substrates. Temperature dependence of dark current, photocurrent response and responsivity were measured and analyzed for fabricated HJPD. HJPD showed the clear photocurrent response having a long cutoff wavelength of 5.35 μm at room temperature. It was observed that the dark current of HJPDs is dominated by the diffusion limited current at temperatures ranging from 200K to room temperature from the dark current analysis. Peak responsivity of HJPDs exhibited the 1.18 A/W and 15 mA/W for 83K and a room temperature under zero bias condition even without anti-reflection coating (ARC). From these results, we believe that HJPDs could be an appropriate PD device for future compact and low power dissipation mid-infrared on-chip sensors and imaging devices.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Optical diode effect at spin-wave excitations in the room-temperature multiferroic BiFeO 3.

DOE PAGES

Kezsmarki, I.; Nagel, U.; Bordacs, S.; ...

2015-09-15

The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO 3 over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. Ourmore » findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.« less

Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad Zahir Uddin

Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing. Our results suggest that plasmon-enhanced ZnO MSM random lasers can become a competitive candidate of efficient ultraviolet light sources. Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. In this thesis, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29 33 A/cm2 are achieved. Numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

Relationship between notch strengthening threshold and mechanical property for ductile cast iron

NASA Astrophysics Data System (ADS)

Ikeda, T.; Noda, N.-A.; Sano, Y.; Umetani, T.; Kai, N.

2018-06-01

In this study, dynamic tensile tests were conducted at the various strain rates and temperatures for traditional ductile cast iron. Then, the notch strength {σ }{{B}}{{noth}} and the static tensile strength at room temperature {σ }{{B,}\\quad {{RT}}}{{smooth}} were discussed in terms of the strain rate- temperature parameter R, which is known to be useful for evaluating the combined influence of strain rate and temperature. This study focuses on the notch strengthening threshold R ≧ R th where {σ }{{B}}{{noth}} is larger than {σ }{{B,}\\quad {{RT}}}{{smooth}} and therefore notched components can be used safely. In other words, if R ≧ R th, {σ }{{B,}\\quad {{RT}}}{{smooth}} can be used to evaluate notched components in mechanical design to prevent the instantaneous fracture. In this study, it was found that the R th value can be predicted from the static tensile property and Brinell hardness. Since the traditional ductile cast iron considered in this paper has a broad range of mechanical properties, the present approach and discussion can be applied to evaluate other materials under various temperature and strain rate.

White-light-controlled resistive switching in ZnO/BaTiO3/C multilayer layer at room temperature

NASA Astrophysics Data System (ADS)

Wang, Junshuai; Liang, Dandan; Wu, Liangchen; Li, Xiaoping; Chen, Peng

2018-07-01

The bipolar resistance switching effect is observed in ZnO/BaTiO3/C structure. The resistance switching behavior can be modulated by white light. The resistance switch states and threshold voltage can be changed when subjected to white light. This research can help explore multi-functional materials and applications in nonvolatile memory device.

Potential of solar-simulator-pumped alexandrite lasers

NASA Technical Reports Server (NTRS)

Deyoung, Russell J.

1990-01-01

An attempt was made to pump an alexandrite laser rod using a Tamarak solar simulator and also a tungsten-halogen lamp. A very low optical laser cavity was used to achieve the threshold minimum pumping-power requirement. Lasing was not achieved. The laser threshold optical-power requirement was calculated to be approximately 626 W/sq cm for a gain length of 7.6 cm, whereas the Tamarak simulator produces 1150 W/sq cm over a gain length of 3.3 cm, which is less than the 1442 W/sq cm required to reach laser threshold. The rod was optically pulsed with 200 msec pulses, which allowed the alexandrite rod to operate at near room temperature. The optical intensity-gain-length product to achieve laser threshold should be approximately 35,244 solar constants-cm. In the present setup, this product was 28,111 solar constants-cm.

A Size Effect on the Fatigue Crack Growth Rate Threshold of Alloy 718

NASA Technical Reports Server (NTRS)

Garr, K. R.; Hresko, G. C., III

1998-01-01

Fatigue crack growth rate (FCGR) tests were conducted on Alloy 718 in the solution annealed and aged condition at room temperature. In each test, the FCGR threshold was measured using the decreasing (Delta)K method. Initial testing was at two facilities, one of which used C(T) specimens with W = 127 mm. Previous data at the other facility had been obtained with specimens with W = 50.8 mm. A comparison of test results at R = 0.1 showed that the threshold for the 127 mm specimen was considerably higher than that of the 50.8 mm specimen. A check showed that this difference was not due to a heat-to-heat or lab-to-lab variation. Additional tests were conducted on specimens with W = 25.4 mm and at other R values. Data for the various specimens is presented along with parameters usually used to describe threshold behavior.

Are the current thresholds, indicators, and time window for cold warning effective enough to protect cardiovascular health?

PubMed

Lin, Shao; Lawrence, Wayne R; Lin, Ziqiang; DiRienzo, Stephen; Lipton, Kevin; Dong, Guang-Hui; Leung, Ricky; Lauper, Ursula; Nasca, Philip; Stuart, Neil

2018-10-15

More extreme cold weather and larger weather variations have raised concerns regarding their effects on public health. Although prior studies assessed the effects of cold air temperature on health, especially mortality, limited studies evaluated wind chill temperatures on morbidity, and health effects under the current cold warning threshold. This study identified the thresholds, lag periods, and best indicators of extreme cold on cardiovascular disease (CVD) by comparing effects of wind chill temperatures and cold air temperatures on CVD emergency department (ED) visits in winter and winter transition months. Information was collected on 662,625 CVD ED visits from statewide hospital discharge dataset in New York State. Meteorological factors, including air temperature, wind speed, and barometric pressure were collected from National Oceanic and Atmospheric Administration. A case-crossover approach was used to assess the extreme cold-CVD relationship in winter (December-February) and transition months (November and March) after controlling for PM 2.5 . Conditional logistic regression models were employed to analyze the association between cold weather factors and CVD ED visits. We observed CVD effects occurred when wind chill temperatures were as high as -3.8 °C (25 °F), warmer than current wind chill warning standard (≤-28.8 °C or ≤-20 °F). Wind chill temperature was a more sensitive indicator of CVD ED visits during winter with temperatures ≤ -3.8 °C (25 °F) with delay effect (lag 6); however, air temperature was better during transition months for temperatures ≤ 7.2 °C (45 °F) at earlier lag days (1-3). Among all CVD subtypes, hypertension ED visit had the strongest negative association with both wind chill temperature and air temperature. This study recommends modifying the current cold warning temperature threshold given larger proportions of CVD cases are occurring at considerably higher temperatures than the current criteria. We also recommend issuing cold warnings in winter transitional months. Copyright © 2018 Elsevier B.V. All rights reserved.

Remarkably High Mobility Thin-Film Transistor on Flexible Substrate by Novel Passivation Material.

PubMed

Shih, Cheng Wei; Chin, Albert

2017-04-25

High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. Remarkably high performance TFT, made at room temperature on flexible substrate, is achieved with record high field-effect mobility (μ FE ) of 345 cm 2 /Vs, small sub-threshold slope (SS) of 103 mV/dec, high on-current/off-current (I ON /I OFF ) of 7 × 10 6 , and a low drain-voltage (V D ) of 2 V for low power operation. The achieved mobility is the best reported data among flexible electronic devices, which is reached by novel HfLaO passivation material on nano-crystalline zinc-oxide (ZnO) TFT to improve both I ON and I OFF . From X-ray photoelectron spectroscopy (XPS) analysis, the non-passivated device has high OH-bonding intensity in nano-crystalline ZnO, which damage the crystallinity, create charged scattering centers, and form potential barriers to degrade mobility.

Single walled carbon nanotube-based stochastic resonance device with molecular self-noise source

NASA Astrophysics Data System (ADS)

Fujii, Hayato; Setiadi, Agung; Kuwahara, Yuji; Akai-Kasaya, Megumi

2017-09-01

Stochastic resonance (SR) is an intrinsic noise usage system for small-signal sensing found in various living creatures. The noise-enhanced signal transmission and detection system, which is probabilistic but consumes low power, has not been used in modern electronics. We demonstrated SR in a summing network based on a single-walled carbon nanotube (SWNT) device that detects small subthreshold signals with very low current flow. The nonlinear current-voltage characteristics of this SWNT device, which incorporated Cr electrodes, were used as the threshold level of signal detection. The adsorption of redox-active polyoxometalate molecules on SWNTs generated additional noise, which was utilized as a self-noise source. To form a summing network SR device, a large number of SWNTs were aligned parallel to each other between the electrodes, which increased the signal detection ability. The functional capabilities of the present small-size summing network SR device, which rely on dense nanomaterials and exploit intrinsic spontaneous noise at room temperature, offer a glimpse of future bio-inspired electronic devices.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Environmental Impacts on Spiking Properties in Hodgkin-Huxley Neuron with Direct Current Stimulus

NASA Astrophysics Data System (ADS)

Yuan, Chang-Qing; Zhao, Tong-Jun; Zhan, Yong; Zhang, Su-Hua; Liu, Hui; Zhang, Yu-Hong

2009-11-01

Based on the well accepted Hodgkin-Huxley neuron model, the neuronal intrinsic excitability is studied when the neuron is subject to varying environmental temperatures, the typical impact for its regulating ways. With computer simulation, it is found that altering environmental temperature can improve or inhibit the neuronal intrinsic excitability so as to influence the neuronal spiking properties. The impacts from environmental factors can be understood that the neuronal spiking threshold is essentially influenced by the fluctuations in the environment. With the environmental temperature varying, burst spiking is realized for the neuronal membrane voltage because of the environment-dependent spiking threshold. This burst induced by changes in spiking threshold is different from that excited by input currents or other stimulus.

Growth of GaN micro/nanolaser arrays by chemical vapor deposition.

PubMed

Liu, Haitao; Zhang, Hanlu; Dong, Lin; Zhang, Yingjiu; Pan, Caofeng

2016-09-02

Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.

Zinc Oxide Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fortunato, E.; Barquinha, P.; Pimentel, A.; Gonçalves, A.; Marques, A.; Pereira, L.; Martins, R.

ZnO thin film transistors (ZnO-TFT) have been fabricated by rf magnetron sputtering at room temperature with a bottom-gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 21 V, a field effect mobility of 20 cm2/Vs, a gate voltage swing of 1.24 V/decade and an on/off ratio of 2×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

Mode control in photonic crystal surface emitting lasers (PCSELs) through in-plane feedback (Conference Presentation)

NASA Astrophysics Data System (ADS)

Taylor, Richard J. E.; Li, Guangrui; Ivanov, Pavlo; Childs, David T. D.; Stevens, Ben J.; Babazadeh, Nasser; Ignatova, Olesya; Hogg, Richard A.

2017-02-01

All-semiconductor photonic crystal surface-emitting lasers (PCSELs) operating in CW mode at room temperature and coherently coupled arrays of these lasers are reviewed. These PCSELs are grown via MOVPE on GaAs substrates and include QW active elements and GaAs/InGaP photonic crystal (PC) layer situated above this active zone. Atoms of triangular shapes have been shown to increase optical power from the PCSEL but are also shown to result in a competition between lasing modes. Simulation shows that the energy splitting of lasing modes is smaller for triangular atoms, than for circles making high power single-mode devices difficult to achieve. In this work we experimentally investigate the effect of lateral optical feedback introduced by a facet cleave along one or two perpendicular PCSEL edges. This cleavage plane is misaligned to the PC resulting in a periodic variation of facet phase along the side of the device. Results confirm that a single cleave selects the lowest threshold 2D lasing mode, resulting in a 20% reduction in threshold current and favours single-mode emission. The addition of a second cleave at right-angles to the first has no significant effect upon threshold current. The virgin device is shown to have a symmetric far-field (1 degree) whilst a single cleave produces a 1 degree divergence perpendicular to cleave and 5 degree parallel to cleave. The second orthogonal cleave results in the far field becoming symmetric again but with a divergence angle of 1 degree indicating that single-mode lasing is supported over a wider area.

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

PubMed

Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

2017-12-13

A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

Room temperature continuous wave mid-infrared VCSEL operating at 3.35 μm

NASA Astrophysics Data System (ADS)

Jayaraman, V.; Segal, S.; Lascola, K.; Burgner, C.; Towner, F.; Cazabat, A.; Cole, G. D.; Follman, D.; Heu, P.; Deutsch, C.

2018-02-01

Tunable vertical cavity surface emitting lasers (VCSELs) offer a potentially low cost tunable optical source in the 3-5 μm range that will enable commercial spectroscopic sensing of numerous environmentally and industrially important gases including methane, ethane, nitrous oxide, and carbon monoxide. Thus far, achieving room temperature continuous wave (RTCW) VCSEL operation at wavelengths beyond 3 μm has remained an elusive goal. In this paper, we introduce a new device structure that has enabled RTCW VCSEL operation near the methane absorption lines at 3.35 μm. This device structure employs two GaAs/AlGaAs mirrors wafer-bonded to an optically pumped active region comprising compressively strained type-I InGaAsSb quantum wells grown on a GaSb substrate. This substrate is removed in processing, as is one of the GaAs mirror substrates. The VCSEL structure is optically pumped at room temperature with a CW 1550 nm laser through the GaAs substrate, while the emitted 3.3 μm light is captured out of the top of the device. Power and spectrum shape measured as a function of pump power exhibit clear threshold behavior and robust singlemode spectra.

Measurement of ablation threshold of oxide-film-coated aluminium nanoparticles irradiated by femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chefonov, O V; Ovchinnikov, A V; Il'ina, I V

We report the results of experiments on estimation of femtosecond laser threshold intensity at which nanoparticles are removed from the substrate surface. The studies are performed with nanoparticles obtained by femtosecond laser ablation of pure aluminium in distilled water. The attenuation (or extinction, i.e. absorption and scattering) spectra of nanoparticles are measured at room temperature in the UV and optical wavelength ranges. The size of nanoparticles is determined using atomic force microscopy. A new method of scanning photoluminescence is proposed to evaluate the threshold of nanoparticle removal from the surface of a glass substrate exposed to IR femtosecond laser pulsesmore » with intensities 10{sup 11} – 10{sup 13} W cm{sup -2}. (interaction of laser radiation with matter)« less

Threshold Switching Characteristics of Nb/NbO 2 /TiN Vertical Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.

2016-01-01

Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of thismore » device as an electronic switch.« less

Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Wu, Chi; Keo, Sam A.; Yao, X. S.; Turner, Tasha E.; Davis, Lawrence J.; Young, Martin G.; Maleki, Lute; Forouhar, Siamak

1998-08-01

The microwave optoelectronic oscillator (OEO) has been demonstrated on a breadboard. The future trend is to integrate the whole OEO on a chip, which requires the development of high power and high efficiency integrated photonic components. In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material. The best devices have threshold currents of 50-mA at room temperature for CW operation. The device length is approximately 3-mm, resulting in a mode spacing of 14 GHz. For only 5-dBm microwave power applied to the modulator section, modulation response with 30 dB resonate enhancement has been observed. This work shows the promise for an on-chip integrated OEO.

Response of pMOS dosemeters on gamma-ray irradiation during its re-use.

PubMed

Pejovic, Milic M; Pejovic, Momcilo M; Jaksic, Aleksandar B

2013-08-01

Response of pMOS dosemeters during two successive irradiations with gamma-ray irradiation to a dose of 35 Gy and annealing at room and elevated temperature has been studied. The response was followed on the basis of threshold voltage shift, determined from transfer characteristics, as a function of absorbed dose or annealing time. It was shown that the threshold voltage shifts during first and second irradiation for the gate bias during irradiation of 5 and 2.5 V insignificantly differ although complete fading was not achieved after the first cycle of annealing. In order to analyse the defects formed in oxide and at the interface during irradiation and annealing, which are responsible for threshold voltage shift, midgap and charge-pumping techniques were used. It was shown that during first irradiation and annealing a dominant influence to threshold voltage shift is made by fixed oxide traps, while at the beginning of the second annealing cycle, threshold voltage shift is a consequence of both fixed oxide traps and slow switching traps.

On 1064 nm and 350 nm laser damage thresholds of high index oxide films deposited from organic solutions and sols

NASA Astrophysics Data System (ADS)

Thomas, I.; Wilder, J.; Gonzales, R.; George, D.

1987-06-01

High index oxide coatings TiO2, Ta2O5, ZrO2 and HfO2 have been prepared from organic solutions of metal organic precursors or from colloidal oxide suspensions. Room temperature processing gives porous coatings of comparatively low index (1.8 to 1.9). Heat treatments can, in some cases, increase the index. Laser damage threshold levels at 1064 nm with a single 1 ns pulse are in the range 6 to 10 J/sq cm. Lower figures are obtained at 350 nm with a 25 ns pulse under multishot (25 Hz) conditions.

Current-Driven Hydrogen Desorption from Graphene: Experiment and Theory.

PubMed

Gao, Li; Pal, Partha Pratim; Seideman, Tamar; Guisinger, Nathan P; Guest, Jeffrey R

2016-02-04

Electron-stimulated desorption of hydrogen from the graphene/SiC(0001) surface at room temperature was investigated with ultrahigh vacuum scanning tunneling microscopy and ab initio calculations in order to elucidate the desorption mechanisms and pathways. Two different desorption processes were observed. In the high electron energy regime (4-8 eV), the desorption yield is independent of both voltage and current, which is attributed to the direct electronic excitation of the C-H bond. In the low electron energy regime (2-4 eV), however, the desorption yield exhibits a threshold dependence on voltage, which is explained by the vibrational excitation of the C-H bond via transient ionization induced by inelastic tunneling electrons. The observed current independence of the desorption yield suggests that the vibrational excitation is a single-electron process. We also observed that the curvature of graphene dramatically affects hydrogen desorption. Desorption from concave regions was measured to be much more probable than desorption from convex regions in the low electron energy regime (∼2 eV), as would be expected from the identified desorption mechanism.

Current-Driven Hydrogen Desorption from Graphene: Experiment and Theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, L.; Pal, Partha P.; Seideman, Tamar

2016-02-04

Electron-stimulated desorption of hydrogen from the graphene/SiC(0001) surface at room temperature was investigated with ultrahigh vacuum scanning tunneling microscopy and ab initio calculations in order to elucidate the desorption mechanisms and pathways. Two different desorption processes were observed. In the high electron energy regime (4-8 eV), the desorption yield is independent of both voltage and current, which is attributed to the direct electronic excitation of the C-H bond. In the low electron energy regime (2-4 eV), however, the desorption yield exhibits a threshold dependence on voltage, which is explained by the vibrational excitation of the C-H bond via transient ionizationmore » induced by inelastic tunneling electrons. The observed current-independence of the desorption yield suggests that the vibrational excitation is a singleelectron process. We also observed that the curvature of graphene dramatically affects hydrogen desorption. Desorption from concave regions was measured to be much more probable than desorption from convex regions in the low electron energy regime (~ 2 eV), as would be expected from the identified desorption mechanism« less

Efficient room-temperature near-infrared detection with solution-processed networked single wall carbon nanotube field effect transistors.

PubMed

Hwang, Ihn; Jung, Hee June; Cho, Sung Hwan; Jo, Seong Soon; Choi, Yeon Sik; Sung, Ji Ho; Choi, Jae Ho; Jo, Moon Ho; Park, Cheolmin

2014-02-26

Efficient room temperature NIR detection with sufficient current gain is made with a solution-processed networked SWNT FET. The high performance NIR-FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Saito, Hideaki; Nishi, Kenichi; Ogura, Ichiro; Sugou, Shigeo; Sugimoto, Yoshimasa

1996-11-01

Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots.

Effect of laryngotracheal topical anesthesia on recurrent laryngeal nerve monitoring during thyroid Surgery.

PubMed

Pachuski, Justin; Vaida, Sonia; Donahue, Kathleen; Roberts, John; Kunselman, Allen; Oberman, Benjamin; Patel, Hetal; Goldenberg, David

2016-03-01

Intraoperative neuromonitoring of the recurrent laryngeal nerve (RLN) is often used as an adjunct for RLN identification and preservation during thyroidectomies. Laryngotracheal anesthesia (LTA) with topical lidocaine reduces coughing upon emergence from anesthesia and in the immediate postoperative period; however, its use is prohibited with concerns that it could decrease the sensitivity of the intraoperative neuromonitoring. We hypothesize that there is no difference in measurements of nerve conduction made before and after LTA administration. An observational study in which all patients were subjected to LTA administration was conducted. Recurrent laryngeal nerve threshold currents were measured before and after the intervention. Tertiary medical center operating room. Eighteen patients (total of 25 nerves at risk) with American Society of Anesthesiologists classes 1 to 3 undergoing thyroid surgery. After the thyroid was removed and threshold currents at the RLN were obtained, LTA with endotracheal lidocaine was applied on the left and right side of the in situ endotracheal tube (2 cc of 4% lidocaine per side). Threshold currents were reassessed at 5 and 10 minutes after LTA administration. Threshold currents (minimum stimulus current applied to the RLN required to generate a discernible electromyographic response at the vocal cords) were recorded along the RLN for a baseline at 5 and 10 mm from the insertion point of the RLN into the larynx. Threshold currents were reassessed at the same 2 positions on the RLN at 5 and 10 minutes after LTA administration. Differences in mean values, between threshold currents recorded at the 3 different times, at 2 positions on the RLN, were used to compare effects of LTA on nerve conduction. There were no statistically significant differences when comparing threshold currents before and after LTA administration. Laryngotracheal anesthesia had no significant effect on RLN nerve conduction in the period assessed. Copyright © 2016 Elsevier Inc. All rights reserved.

Room-temperature creation and spin-orbit torque-induced manipulation of skyrmions in thin film

NASA Astrophysics Data System (ADS)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang; Li, Wenyuan; Im, Se Kwon K.; Fan, Yabin; Wong, Kin L.; Tserkovnyak, Yaroslav; Amiri, Pedram Khalili; Wang, Kang L.

Magnetic skyrmions, which are topologically protected spin texture, are promising candidates for ultra-low energy and ultra-high density magnetic data storage and computing applications1, 2. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of materials available is limited and there is a lack of electrical means to control of skyrmions. Here, we experimentally demonstrate a method for creating skyrmion bubbles phase in the ferromagnetic thin film at room temperature. We further demonstrate that the created skyrmion bubbles can be manipulated by electric current. This room-temperature creation and manipulation of skyrmion in thin film is of particular interest for applications, being suitable for room-temperature operation and compatible with existing semiconductor manufacturing tools. 1. Nagaosa, N., Tokura, Y. Nature Nanotechnology 8, 899-911 (2013). 2. Fert, A., et al., Nature Nanotechnology 8, 152-156 (2013).

Low-cost fabrication of highly sensitive room temperature hydrogen sensor based on ordered mesoporous Co-doped TiO2 structure

NASA Astrophysics Data System (ADS)

Li, Zhong; Haidry, Azhar Ali; Wang, Tao; Yao, Zheng Jun

2017-07-01

The development of cost-effective gas sensors with improved sensing properties and minimum power consumption for room temperature hydrogen leakage monitoring is in increasing demand. In this context, this report focus on the facile fabrication of ordered mesoporous TiO2 via evaporation-induced self-assembly route. With the controlled doping threshold (3%Co-TiO2), the output resistance change to 1000 ppm H2 is ˜4.1 × 103 with the response time of 66 s. The sensor response exhibits power law dependence with an increase in the hydrogen concentration, where the power law coefficient was found not only specific to the kind of target gas but also related to temperature. Further, the effect of structure integrity with doping level and humidity on sensing characteristics is interpreted in terms of variation in surface potential eVS and depletion region w caused by the adsorption of molecular oxygen O2-.

Transport temperatures observed during the commercial transportation of animals.

PubMed

Fiore, Gianluca; Hofherr, Johann; Natale, Fabrizio; Mainetti, Sergio; Ruotolo, Espedito

2012-01-01

Current temperature standards and those proposed by the European Food Safety Authority (EFSA) were compared with the actual practices of commercial transport in the European Union. Temperature and humidity records recorded for a year on 21 vehicles over 905 journeys were analysed. Differences in temperature and humidity recorded by sensors at four different positions in the vehicles exceeded 10°C between the highest and lowest temperatures in nearly 7% of cases. The number and position of temperature sensors are important to ensure the correct representation of temperature conditions in the different parts of a vehicle. For all journeys and all animal categories, a relatively high percentage of beyond threshold temperatures can be observed in relation to the temperature limits of 30°C and 5°C. Most recorded temperature values lie within the accepted tolerance of ±5°C stipulated in European Community Regulation (EC) 1/2005. The temperature thresholds proposed by EFSA would result in a higher percentage of non-compliant conditions which are more pronounced at the lower threshold, compared to the thresholds laid down in Regulation (EC) 1/2005. With respect to the different animal categories, the non-compliant temperature occurrences were more frequent in pigs and sheep, in particular with regard to the thresholds proposed by EFSA.

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

2016-07-04

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Nuese, C. J.; Kressel, H.

1978-01-01

In (AlGa)As, the first of three alloy systems studied, Continuous Wave (CW) operation was obtained at room temperature at a wavelength as low as 7260 A. Reliability in this system was studied in the incoherent mode. Zinc doped devices had significant degradation, whereas Ge or Ge plus Zi doped devices had none. The Al2O3 facet coatings were shown to significantly reduce facet deterioration in all types of lasers, longer wavelength units of that type having accumulated (at the time of writing) 22,000 hours with little if any degradation. A CL study of thin (AlGa)As layers revealed micro fluctuation in composition. A macro-scale fluctuation was observed by electroreflectance. An experimental and theoretical study of the effect of stripe width on the threshold current was carried out. Emission below 7000 A was obtained in VPE grown Ga(AsP) (In,Ga)P with CW operation at 10 C. Lasers and LED's were made by LPE in (InGa) (AsP). Laser thresholds of 5 kA/cm2 were obtained, while LED efficiences were on the order of 2%. Incoherent life test over 6000 hours showed no degradation.

The effect of hyperbaric conditions on olfactory functions.

PubMed

Ay, Hakan; Salihoglu, Murat; Altundag, Aytug; Tekeli, Hakan; Memis, Ali; Cayonu, Melih

2014-01-01

The aim of this study was to investigate the effect of increased atmospheric pressure (AP) on olfactory function. The present study included 40 healthy volunteers with no history of chronic rhinosinusitis and nasal polyposis. The experimental procedure consisted of two episodes: (a) baseline episode, with normal AP; 1 absolute atmosphere (atm abs) in a test room at sea level; (b) experimental episode, increased level of AP; 2.4 atm abs in the hyperbaric chamber. Sino-nasal outcome test-20, Trail Making Test A and olfactory testing were performed in each episodes. The study group consisted of 23 men (57.5%) and 17 women (42.5%); the mean age of the study population was 38.7 +/- 9 years (range 23-58 years). The current investigation produced two major findings: (1) the mean of odor threshold scores was significantly increased in the hyperbaric condition when compared to the normobaric condition; (2) rather, there was no significant change in odor discrimination and identification scores in the hyperbaric condition. Based on two measurements taken at two different barometric pressures and the same temperature and relative humidity, this study suggests that odor threshold scores increase under hyperbaric conditions.

Subcritical crack growth of selected aerospace pressure vessel materials

NASA Technical Reports Server (NTRS)

Hall, L. R.; Bixler, W. D.

1972-01-01

This experimental program was undertaken to determine the effects of combined cyclic/sustained loads, stress level, and crack shape on the fatigue crack growth rate behavior of cracks subjected to plane strain conditions. Material/environment combinations tested included: 2219-T87 aluminum plate in gaseous helium, room air, and 3.5% NaCl solution at room temperature, liquid nitrogen, and liquid hydrogen; 5Al-2.5 Sn (ELI) titanium plate in liquid nitrogen and liquid hydrogen and 6AL-4V (ELI) STA titanium plate in gaseous helium and methanol at room temperature. Most testing was accomplished using surface flawed specimens instrumented with a clip gage to continuously monitor crack opening displacements at the specimen surface. Tapered double cantilever beam specimens were also tested. Static fracture and ten hour sustained load tests were conducted to determine fracture toughness and apparent threshold stress intensity values. Cyclic tests were performed using sinusoidal loading profiles at 333 MHz (20 cpm) and trapezoidal loading profiles at both 8.3 MHz (0.5 cpm) and 3.3 MHz (0.2 cpm). Data were evaluated using modified linear elastic fracture mechanics parameters.

Evaluation of Energy Efficiency Performance of Heated Windows

NASA Astrophysics Data System (ADS)

Jammulamadaka, Hari Swarup

The study about the evaluation of the performance of the heated windows was funded by the WVU Research Office as a technical assistance award at the 2014 TransTech Energy Business Development Conference to the Green Heated Glass company/project owned by Frank Dlubak. The award supports a WVU researcher to conduct a project important for commercialization. This project was awarded to the WVU Industrial Assessment Center in 2015. The current study attempted to evaluate the performance of the heated windows by developing an experimental setup to test the window at various temperatures by varying the current input to the window. The heated double pane window was installed in an insulated box. A temperature gradient was developed across the window by cooling one side of the window using gel based ice packs. The other face of the window was heated by passing current at different wattages through the window. The temperature of the inside and outside panes, current and voltage input, room and box temperature were recorded, and used to calculate the apparent R-value of the window when not being heated vs when being heated. It has been concluded from the study that the heated double pane window is more effective in reducing heat losses by as much as 50% than a non-heated double pane window, if the window temperature is maintained close to the room temperature. If the temperature of the window is much higher than the room temperature, the losses through the window appear to increase beyond that of a non-heated counterpart. The issues encountered during the current round of experiments are noted, and recommendations provided for future studies.

A Two-Dimensional Ruddlesden-Popper Perovskite Nanowire Laser Array based on Ultrafast Light-Harvesting Quantum Wells.

PubMed

Zhang, Haihua; Wu, Yishi; Liao, Qing; Zhang, Zhaoyi; Liu, Yanping; Gao, Qinggang; Liu, Peng; Li, Meili; Yao, Jiannian; Fu, Hongbing

2018-06-25

Miniaturized nanowire nanolasers of 3D perovskites feature a high gain coefficient; however, room-temperature optical gain and nanowire lasers from 2D layered perovskites have not been reported to date. A biomimetic approach is presented to construct an artificial ligh-harvesting system in mixed multiple quantum wells (QWs) of 2D-RPPs of (BA) 2 (FA) n-1 Pb n Br 3n+1 , achieving room-temperature ASE and nanowire (NW) lasing. Owing to the improvement of flexible and deformable characteristics provided by organic BA cation layers, high-density large-area NW laser arrays were fabricated with high photostability. Well-controlled dimensions and uniform geometries enabled 2D-RPPs NWs functioning as high-quality Fabry-Perot (FP) lasers with almost identical optical modes, high quality (Q) factor (ca. 1800), and similarly low lasing thresholds. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High Strength-High Ductility Combination Ultrafine-Grained Dual-Phase Steels Through Introduction of High Degree of Strain at Room Temperature Followed by Ultrarapid Heating During Continuous Annealing of a Nb-Microalloyed Steel

NASA Astrophysics Data System (ADS)

Deng, Yonggang; Di, Hongshuang; Hu, Meiyuan; Zhang, Jiecen; Misra, R. D. K.

2017-07-01

Ultrafine-grained dual-phase (UFG-DP) steel consisting of ferrite (1.2 μm) and martensite (1 μm) was uniquely processed via combination of hot rolling, cold rolling and continuous annealing of a low-carbon Nb-microalloyed steel. Room temperature tensile properties were evaluated and fracture mechanisms studied and compared to the coarse-grained (CG) counterpart. In contrast to the CG-DP steel, UFG-DP had 12.7% higher ultimate tensile strength and 10.7% greater uniform elongation. This is partly attributed to the increase in the initial strain-hardening rate, decrease in nanohardness ratio of martensite and ferrite. Moreover, a decreasing number of ferrite grains with {001} orientation increased the cleavage fracture stress and increased the crack initiation threshold stress with consequent improvement in ductility UFG-DP steel.

Expansion and evolution of fractures in coal-rock mass for coalfield fires with the conditions of temperatures and pressures in China

NASA Astrophysics Data System (ADS)

Xiao, Yang; Zhou, Yi-Feng; Deng, Jun; Yi, Xin

2017-04-01

The process of coalfield fire is a complicated result of physical and chemical action, which is attributed to uncontrolled continuously combustion. The fire holds the ceaselessly expansion which dues to the oxygen supply constantly. The fractures play a key role to provide passageway for oxygen supply, and heat discharge and gases emission. In this article, we chose the samples of coal and rock in coalfields of Qinshui and Zhunnan, China, and the conditions: (1) single affection of temperature from 25 °C (room temperature) to 500 °C, (2) effect of temperatures (room temperature, 80 °C, 140 °C, 200 °C), and total process of stress and strain. The MTS 880, and industrial CT employed to do the experimental tests. For given heating at 5 °C/min, the length and width of fractures are increased as raising the temperature, and the threshold of temperature at 300 °C is determined at the range of 25-500 °C. As rising the temperature, the total amounts of fractures are augmented in samples, which shapes are converted from slightness to ellipse. The compression strength occurs first increase and then decrease, which reached the maximal value at 140 °C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Yongping; Zhu, Haiming; Schrader, Alex W.

The excellent intrinsic optoelectronic properties of methylammonium lead halide perovskites (MAPbX 3, X = Br, I), such as high photoluminescence quantum efficiency, long carrier lifetime, and high gain coupled with the facile solution growth of nanowires make them promising new materials for ultralow-threshold nanowire lasers. However, their photo and thermal stabilities need to be improved for practical applications. Herein, we report a low-temperature solution growth of single crystal nanowires of formamidinium lead halide perovskites (FAPbX 3) that feature red-shifted emission and better thermal stability compared to MAPbX 3. We demonstrate optically pumped room-temperature near-infrared (~820 nm) and green lasing (~560more » nm) from FAPbI 3 (and MABr-stabilized FAPbI 3) and FAPbBr 3 nanowires with low lasing thresholds of several microjoules per square centimeter and high quality factors of about 1500–2300. More remarkably, the FAPbI 3 and MABr-stabilized FAPbI 3 nanowires display durable room-temperature lasing under ~10 8 shots of sustained illumination of 402 nm pulsed laser excitation (150 fs, 250 kHz), substantially exceeding the stability of MAPbI 3 (~10 7 laser shots). We further demonstrate tunable nanowire lasers in wider wavelength region from FA-based lead halide perovskite alloys (FA,MA)PbI 3 and (FA,MA)Pb(I,Br) 3 through cation and anion substitutions. The results suggest that formamidinium lead halide perovskite nanostructures could be more promising and stable materials for the development of light-emitting diodes and continuous-wave lasers.« less

Optical Diode Effect at Spin-Wave Excitations of the Room-Temperature Multiferroic BiFeO_{3}.

PubMed

Kézsmárki, I; Nagel, U; Bordács, S; Fishman, R S; Lee, J H; Yi, Hee Taek; Cheong, S-W; Rõõm, T

2015-09-18

Multiferroics permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO_{3} over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.

Curious Case of Positive Current Collectors: Corrosion and Passivation at High Temperature.

PubMed

Sayed, Farheen N; Rodrigues, Marco-Tulio F; Kalaga, Kaushik; Gullapalli, Hemtej; Ajayan, P M

2017-12-20

In the evaluation of compatibility of different components of cell for high-energy and extreme-conditions applications, the highly focused are positive and negative electrodes and their interaction with electrolyte. However, for high-temperature application, the other components are also of significant influence and contribute toward the total health of battery. In present study, we have investigated the behavior of aluminum, the most common current collector for positive electrode materials for its electrochemical and temperature stability. For electrochemical stability, different electrolytes, organic and room temperature ionic liquids with varying Li salts (LiTFSI, LiFSI), are investigated. The combination of electrochemical and spectroscopic investigations reflects the varying mechanism of passivation at room and high temperature, as different compositions of decomposed complexes are found at the surface of metals.

Low-Threshold Lasing from 2D Homologous Organic-Inorganic Hybrid Ruddlesden-Popper Perovskite Single Crystals.

PubMed

Raghavan, Chinnambedu Murugesan; Chen, Tzu-Pei; Li, Shao-Sian; Chen, Wei-Liang; Lo, Chao-Yuan; Liao, Yu-Ming; Haider, Golam; Lin, Cheng-Chieh; Chen, Chia-Chun; Sankar, Raman; Chang, Yu-Ming; Chou, Fang-Cheng; Chen, Chun-Wei

2018-05-09

Organic-inorganic hybrid two-dimensional (2D) perovskites have recently attracted great attention in optical and optoelectronic applications due to their inherent natural quantum-well structure. We report the growth of high-quality millimeter-sized single crystals belonging to homologous two-dimensional (2D) hybrid organic-inorganic Ruddelsden-Popper perovskites (RPPs) of (BA) 2 (MA) n-1 Pb n I 3 n+1 ( n = 1, 2, and 3) by a slow evaporation at a constant-temperature (SECT) solution-growth strategy. The as-grown 2D hybrid perovskite single crystals exhibit excellent crystallinity, phase purity, and spectral uniformity. Low-threshold lasing behaviors with different emission wavelengths at room temperature have been observed from the homologous 2D hybrid RPP single crystals. Our result demonstrates that solution-growth homologous organic-inorganic hybrid 2D perovskite single crystals open up a new window as a promising candidate for optical gain media.

Amorphous indium-gallium-zinc-oxide thin-film transistors using organic-inorganic hybrid films deposited by low-temperature plasma-enhanced chemical vapor deposition for all dielectric layers

NASA Astrophysics Data System (ADS)

Hsu, Chao-Jui; Chang, Ching-Hsiang; Chang, Kuei-Ming; Wu, Chung-Chih

2017-01-01

We investigated the deposition of high-performance organic-inorganic hybrid dielectric films by low-temperature (close to room temperature) inductively coupled plasma chemical vapor deposition (ICP-CVD) with hexamethyldisiloxane (HMDSO)/O2 precursor gas. The hybrid films exhibited low leakage currents and high breakdown fields, suitable for thin-film transistor (TFT) applications. They were successfully integrated into the gate insulator, the etch-stop layer, and the passivation layer for bottom-gate staggered amorphous In-Ga-Zn-O (a-IGZO) TFTs having the etch-stop configuration. With the double-active-layer configuration having a buffer a-IGZO back-channel layer grown in oxygen-rich atmosphere for better immunity against plasma damage, the etch-stop-type bottom-gate staggered a-IGZO TFTs with good TFT characteristics were successfully demonstrated. The TFTs showed good field-effect mobility (μFE), threshold voltage (V th), subthreshold swing (SS), and on/off ratio (I on/off) of 7.5 cm2 V-1 s-1, 2.38 V, 0.38 V/decade, and 2.2 × 108, respectively, manifesting their usefulness for a-IGZO TFTs.

Sub-microWatt threshold nanoisland lasers

PubMed Central

Jang, Hoon; Karnadi, Indra; Pramudita, Putu; Song, Jung-Hwan; Soo Kim, Ki; Lee, Yong-Hee

2015-01-01

Ultralow threshold nanolasers have been sought after as power efficient light sources in photonic integrated circuits. Here a single-cell nanobeam laser with a nanoisland quantum well is proposed and demonstrated. Continuous operation at 1.5 μm is achieved at room temperature with an ultralow lasing threshold of 210 nW in absorbed power. The size of the active medium is reduced to 0.7 × 0.25 × 0.02 μm3 by removing the absorptive quantum well region surrounding the central cavity. Relatively thick (420 nm) InP slabs are employed to improve the thermal and mechanical characteristics. The nanoisland-based structures will provide a new platform to engineer fundamental light–matter interactions by controlling the size and the location of the nanoemitters, allowing the realization of highly efficient nanophotonic devices. PMID:26391800

Long-term room temperature stability of TlBr gamma detectors

NASA Astrophysics Data System (ADS)

Conway, A. M.; Voss, L. F.; Nelson, A. J.; Beck, P. R.; Graff, R. T.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L. J.; Shah, K.

2011-09-01

TlBr is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3 % at 662 keV, demonstrating the potential of this material system. However, these detectors are known to polarize using conventional configurations, limiting their use. Continued improvement of room temperature, high-resolution gamma ray detectors based on TlBr requires further understanding of the degradation mechanisms. While high quality material is a critical starting point for excellent detector performance, we show that the room temperature stability of planar TlBr gamma spectrometers can be significantly enhanced by treatment with both hydrofluoric and hydrochloric acid. By incorporating F or Cl into the surface of TlBr, current instabilities are eliminated and the longer term current of the detectors remains unchanged. 241Am spectra are also shown to be more stable for extended periods; detectors have been held at 2000 V/cm for 52 days with less than 10% degradation in peak centroid position. In addition, evidence for the long term degradation mechanism being related to the contact metal is presented.

Preparation and characterization of BiFeO3/La0.7Sr0.3MnO3 heterostructure grown on SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Zhao, Chenwei; Zhou, Chaochao; Chen, Changle

2017-09-01

In this paper, BiFeO3/La0.7Sr0.3MnO3 heterostructure is fabricated on the SrTiO (100) substrate using the pulsed laser deposition method (PLD). Magnetization hystersis loops of the BiFeO3/La0.7Sr0.3MnO3 heterostructure are obtained at 300 K and 80 K. The heterostructure exhibits evident ferromagnetic characteristic at both room temperature and 80 K. At 80 K, magnetization of the heterostructure is stronger than room temperature magnetic measure. The temperature dependence of resistance of the heterostructure with different currents is also studied. With different currents, there appears to be a peak resistance about 180 K. When I is 50 uA, ΔR is 68.4%. And when I is 100 uA, ΔR is 79.3%. The BiFeO3/La0.7Sr0.3MnO3 heterostructure exhibits a positive colossal magnetoresistance (MR) effect over a temperature range of 80-300 K. In our heterostructure, maximum magnetic resistance appears in 210 K, and MR = 44.34%. Mechanism analysis of the leakage current at room temperature shows that the leakage current is the interface-limited Schottky emission, but not dominated by the Poole-Frenkel emission or SCLC.

Temperature dependent GaAs MMIC radiation effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, W.T.; Roussos, J.A.; Gerdes, J.

1993-12-01

The temperature dependence of pulsed neutron and flash x-ray radiation effects was studied in GaAs MMICs. Above room temperature the long term current transients are dominated by electron trapping in previously existing defects. At low temperature in the range 126 to 259 K neutron induced lattice damage appears to play an increasingly important role in producing long term current transients.

Spectroscopic study of transparency current in mid-infrared quantum cascade lasers.

PubMed

Revin, Dmitry G; Hassan, Randa S; Krysa, Andrey B; Wang, Yongrui; Belyanin, Alexey; Kennedy, Kenneth; Atkins, Chris N; Cockburn, John W

2012-08-13

We report measurements which give direct insight into the origins of the transparency current for λ ~5 µm In0.6Ga0.4As/In0.42Al0.58As quantum cascade lasers in the temperature range of 80-280 K. The transparency current values have been found from broadband transmission measurements through the laser waveguides under sub-threshold operating conditions. Two active region designs were compared. The active region of the first laser is based on double-LO-phonon relaxation approach, while the second device has only one lower level, without specially designed resonant LO-phonon assisted depopulation. It is shown that transparency current contributes more than 70% to the magnitude of threshold current at high temperatures for both designs.

Radiation hardening of MOS devices by boron. [for stabilizing gate threshold potential of field effect device

NASA Technical Reports Server (NTRS)

Danchenko, V. (Inventor)

1974-01-01

A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations.

Optimization of physicochemical characteristics of a lithium anode interface for high-efficiency cycling: an effect of electrolyte temperature

NASA Astrophysics Data System (ADS)

Ishikawa, Masashi; Tasaka, Yuko; Yoshimoto, Nobuko; Morita, Masayuki

Precycling of lithium (Li) metal on a nickel substrate at a low-temperature (-20°C) in propylene carbonate (PC) mixed with dimethyl carbonate (DMC) and Li hexafluorophosphate (LiPF 6) (LiPF 6-PC/DMC) enhanced Li cycleability in the subsequent cycles at a room temperature (25°C). In LiPF 6-PC/DMC, not only the low-temperature precycling in the initial 10 cycles was effective in the improvement of Li cycle life but also the first low-temperature Li deposition followed by room temperature cycling enhanced the Li cycle life. Such a precycling effect was observed with various current densities at the initial Li deposition and the subsequent cycling. When the current density of the cycling was high, improved cycling efficiency was observed and the efficiency of the Li electrode undergoing the precycling was close to that at a constant temperature of -20°C.

A study of structural, electrical, and optical properties of p-type Zn-doped SnO2 films versus deposition and annealing temperature

NASA Astrophysics Data System (ADS)

Le, Tran; Phuc Dang, Huu; Luc, Quang Ho; Hieu Le, Van

2017-04-01

This study presents a detailed investigation of the structural, electrical, and optical properties of p-type Zn-doped SnO2 versus the deposition and annealing temperature. Using a direct-current (DC) magnetron sputtering method, p-type transparent conductive Zn-doped SnO2 (ZTO) films were deposited on quartz glass substrates. Zn dopants incorporated into the SnO2 host lattice formed the preferred dominant SnO2 (1 0 1) and (2 1 1) planes. X-ray photoelectron spectroscopy (XPS) was used for identifying the valence state of Zn in the ZTO film. The electrical property of ZTO films changed from n-type to p-type at the threshold temperature of 400 °C, and the films achieved extremely high conductivity at the optimum annealing temperature of 600 °C after annealing for 2 h. The best conductive property of the film was obtained on a 10 wt% ZnO-doped SnO2 target with a resistivity, hole concentration, and hole mobility of 0.22 Ω · cm, 7.19  ×  1018 cm-3, and 3.95 cm2 V-1 s-1, respectively. Besides, the average transmission of films was  >84%. The surface morphology of films was examined using scanning electron microscopy (SEM). Moreover, the acceptor level of Zn2+ was identified using photoluminescence spectra at room temperature. Current-voltage (I-V) characteristics revealed the behavior of a p-ZTO/n-Si heterojunction diode.

Room temperature high-fidelity holonomic single-qubit gate on a solid-state spin.

PubMed

Arroyo-Camejo, Silvia; Lazariev, Andrii; Hell, Stefan W; Balasubramanian, Gopalakrishnan

2014-09-12

At its most fundamental level, circuit-based quantum computation relies on the application of controlled phase shift operations on quantum registers. While these operations are generally compromised by noise and imperfections, quantum gates based on geometric phase shifts can provide intrinsically fault-tolerant quantum computing. Here we demonstrate the high-fidelity realization of a recently proposed fast (non-adiabatic) and universal (non-Abelian) holonomic single-qubit gate, using an individual solid-state spin qubit under ambient conditions. This fault-tolerant quantum gate provides an elegant means for achieving the fidelity threshold indispensable for implementing quantum error correction protocols. Since we employ a spin qubit associated with a nitrogen-vacancy colour centre in diamond, this system is based on integrable and scalable hardware exhibiting strong analogy to current silicon technology. This quantum gate realization is a promising step towards viable, fault-tolerant quantum computing under ambient conditions.

Results Of Insulation Resistance Between Solar Cell String Gaps Without RTV Adhesive Grout After Electrostatic Discharge Tests With Cover Glass Flashover

NASA Astrophysics Data System (ADS)

Hoang, Bao; Wong, Frankie; Redick, Tod; Masui, Hirokazu; Endo, Taishi; Toyoda, Kazuhiro; Cho, Mengu

2011-10-01

A series of electrostatic discharge (ESD) tests was performed on solar array test coupons consisting of Advanced Triple Junction InGaP2/InGaAs/Ge solar cells. The motivation for these tests was to evaluate the effects of ESD on solar array design without room temperature vulcanized (RTV) adhesive grout between the string-to-string parallel gaps. To investigate the threshold of permanently sustained secondary arcs, various combinations of gap width, load voltage and string current were tested in a vacuum chamber equipped with an electron beam gun. This ESD test program included the ESD test circuit with simulated panel coverglass flashover. Although ESD events did not result in permanent sustained arcs, the insulation resistance between strings was found to decrease as the number of secondary arcs accumulated in the gap.

Work climate and work load measurement in production room of Batik Merak Manis Laweyan

NASA Astrophysics Data System (ADS)

Suhardi, Bambang; Simanjutak, Sry Yohana; Laksono, Pringgo Widyo; Herjunowibowo, Dewanto

2017-11-01

The work environment is everything around the labours that can affect them in the exercise of duties and work that is charged. In a work environment, there are workplace climate and workload which affect the labour in force carrying out its work. The working climate is one of the physical factors that could potentially cause health problems towards labour at extreme conditions of hot and cold that exceed the threshold limit value allowed by the standards of health. The climate works closely related to the workload accepted by workers in the performance of their duties. The influence of workload is pretty dominant against the performance of human resources and may cause negative effects to the safety and health of the labours. This study aims to measure the effect of the work climate and the workload against workers productivity. Furthermore, some suggestions to increase the productivity also been recommended. The research conducted in production room of Batik Merak Manis Laweyan. The results showed that the workplace climate and the workload at eight stations in production room of Merak Manis does not agree to the threshold limit value that has been set. Therefore, it is recommended to add more opening windows to add air velocity inside the building thus the humidity and temperature might be reduced.

Monolithically integrated mid-infrared sensor using narrow mode operation and temperature feedback

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ristanic, Daniela; Schwarz, Benedikt, E-mail: benedikt.schwarz@tuwien.ac.at; Reininger, Peter

A method to improve the sensitivity and selectivity of a monolithically integrated mid-infrared sensor using a distributed feedback laser (DFB) is presented in this paper. The sensor is based on a quantum cascade laser/detector system built from the same epitaxial structure and with the same fabrication approach. The devices are connected via a dielectric-loaded surface plasmon polariton waveguide with a twofold function: it provides high light coupling efficiency and a strong interaction of the light with the environment (e.g., a surrounding fluid). The weakly coupled DFB quantum cascade laser emits narrow mode light with a FWHM of 2 cm{sup −1} atmore » 1586 cm{sup −1}. The room temperature laser threshold current density is 3 kA∕cm{sup 2} and a pulsed output power of around 200 mW was measured. With the superior laser noise performance, due to narrow mode emission and the compensation of thermal fluctuations, the lower limit of detection was expanded by one order of magnitude to the 10 ppm range.« less

Large spin current injection in nano-pillar-based lateral spin valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp

We have investigated the influence of the injection of a large pure spin current on a magnetization process of a non-locally located ferromagnetic dot in nano-pillar-based lateral spin valves. Here, we prepared two kinds of the nano-pillar-type lateral spin valve based on Py nanodots and CoFeAl nanodots fabricated on a Cu film. In the Py/Cu lateral spin valve, although any significant change of the magnetization process of the Py nanodot has not been observed at room temperature. The magnetization reversal process is found to be modified by injecting a large pure spin current at 77 K. Switching the magnetization bymore » the nonlocal spin injection has also been demonstrated at 77 K. In the CoFeAl/Cu lateral spin valve, a room temperature spin valve signal was strongly enhanced from the Py/Cu lateral spin valve because of the highly spin-polarized CoFeAl electrodes. The room temperature nonlocal switching has been demonstrated in the CoFeAl/Cu lateral spin valve.« less

Electromigration and morphological changes in Ag nanostructures

NASA Astrophysics Data System (ADS)

Chatterjee, A.; Bai, T.; Edler, F.; Tegenkamp, C.; Weide-Zaage, K.; Pfnür, H.

2018-02-01

Electromigration (EM) as a structuring tool was investigated in Ag nanowires (width 300 nm, thickness 25 nm) and partly in notched and bow-tie Ag structures on a Si(1 0 0) substrate in ultra-high vacuum using a four-tip scanning tunneling microscope in combination with a scanning electron microscope. From simulations of Ag nanowires we got estimates of temperature profiles, current density profiles, EM and thermal migration (TM) mass flux distributions within the nanowire induced by critical current densities of 108 A cm-2. At room temperature, the electron wind force at these current densities by far dominates over thermal diffusion, and is responsible for formation of voids at the cathode and hillocks at the anode side. For current densities that exceed the critical current densities necessary for EM, a new type of wire-like structure formation was found both at room temperature and at 100 K for notched and bow-tie structures. This suggests that the simultaneous action of EM and TM is structure forming, but with a very small influence of TM at low temperature.

Finite-Temperature Hydrogen Adsorption/Desorption Thermodynamics Driven by Soft Vibration Modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Woo, Sung-Jae; Lee, Eui-Sup; Yoon, Mina

2013-01-01

It is widely accepted that room-temperature hydrogen storage on nanostructured or porous materials requires enhanced dihydrogen adsorption. In this work we reveal that room-temperature hydrogen storage is possible not only by the enhanced adsorption, but also by making use of the vibrational free energy from soft vibration modes. These modes exist for example in the case of metallo-porphyrin-incorporated graphenes (M-PIGs) with out-of-plane ( buckled ) metal centers. There, the in-plane potential surfaces are flat because of multiple-orbital-coupling between hydrogen molecules and the buckled-metal centers. This study investigates the finite-temperature adsorption/desorption thermodynamics of hydrogen molecules adsorbed on M-PIGs by employing first-principlesmore » total energy and vibrational spectrum calculations. Our results suggest that the current design strategy for room-temperature hydrogen storage materials should be modified by explicitly taking finite-temperature vibration thermodynamics into account.« less

Ultralow percolation threshold of single walled carbon nanotube-epoxy composites synthesized via an ionic liquid dispersant/initiator

NASA Astrophysics Data System (ADS)

Watters, Arianna L.; Palmese, Giuseppe R.

2014-09-01

Uniform dispersion of single walled carbon nanotubes (SWNTs) in an epoxy was achieved by a streamlined mechano-chemical processing method. SWNT-epoxy composites were synthesized using a room temperature ionic liquid (IL) with an imidazolium cation and dicyanamide anion. The novel approach of using ionic liquid that behaves as a dispersant for SWNTs and initiator for epoxy polymerization greatly simplifies nanocomposite synthesis. The material was processed using simple and scalable three roll milling. The SWNT dispersion of the resultant composite was evaluated by electron microscopy and electrical conductivity measurements in conjunction with percolation theory. Processing conditions were optimized to achieve the lowest possible percolation threshold, 4.29 × 10-5 volume fraction SWNTs. This percolation threshold is among the best reported in literature yet it was obtained using a streamlined method that greatly simplifies processing.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchell K Meyer

Blister–threshold testing of fuel plates is a standard method through which the safety margin for operation of plate-type in research and test reactors is assessed. The blister-threshold temperature is indicative of the ability of fuel to operate at high temperatures for short periods of time (transient conditions) without failure. This method of testing was applied to the newly developed U-Mo monolithic fuel system. Blister annealing studies on the U-Mo monolithic fuel plates began in 2007, with the Reduced Enrichment for Research and Test Reactors (RERTR)-6 experiment, and they have continued as the U-Mo fuel system has evolved through the researchmore » and development process. Blister anneal threshold temperatures from early irradiation experiments (RERTR-6 through RERTR-10) ranged from 400 to 500°C. These temperatures were projected to be acceptable for NRC-licensed research reactors and the high-power Advanced Test Reactor (ATR) and the High Flux Isotope Reactor (HFIR) based on current safety-analysis reports (SARs). Initial blister testing results from the RERTR-12 experiment capsules X1 and X2 showed a decrease in the blister-threshold temperatures. Blister threshold temperatures from this experiment ranged from 300 to 400°C. Selected plates from the AFIP-4 experiment, which was fabricated using a process similar to that used to fabricate the RERTR-12 experiment, also underwent blister testing to determine whether results would be similar. The measured blister-threshold temperatures from the AFIP-4 plates fell within the same blister-threshold temperature range measured in the RERTR-12 plates. Investigation of the cause of this decrease in bister threshold temperature is being conducted under the guidance of Idaho National Laboratory PLN-4155, “Analysis of Low Blister Threshold Temperatures in the RERTR-12 and AFIP-4 Experiments,” and is driven by hypotheses. The main focus of the investigation is in the following areas: 1. Fabrication variables 2. Pre-irradiation characterization 3. Irradiation conditions 4. Post-irradiation examination 5. Additional blister testing 6. Mechanical modeling This report documents the preliminary results of this investigation. Several hypotheses can be dismissed as a result of this investigation. Two primary categories of causes remain. The most prominent theory, supported by the data, is that low blister-threshold temperature is the result of mechanical energy imparted on the samples during the fabrication process (hot and cold rolling) without adequate post processing (annealing). The mechanisms are not clearly understood and require further investigation, but can be divided into two categories: • Residual Stress • Undesirable interaction boundary and/or U-Mo microstructure change A secondary theory that cannot be dismissed with the information that is currently available is that a change in the test conditions has resulted in a statistically significant downward shift of measured blister temperature. This report outlines the results of the forensic investigations conducted to date. The data and conclusions presented in this report are preliminary. Definitive cause and effect relationships will be established by future experimental programs.« less

Corrosion of Pipeline and Wellbore Steel by Liquid CO2 Containing Trace Amounts of Water and SO2

NASA Astrophysics Data System (ADS)

McGrail, P.; Schaef, H. T.; Owen, A. T.

2009-12-01

Carbon dioxide capture and storage in deep saline formations is currently considered the most attractive option to reduce greenhouse gas emissions with continued use of fossil fuels for energy production. Transporting captured CO2 and injection into suitable formations for storage will necessarily involve pipeline systems and wellbores constructed of carbon steels. Industry standards currently require nearly complete dehydration of liquid CO2 to reduce corrosion in the pipeline transport system. However, it may be possible to establish a corrosion threshold based on H2O content in the CO2 that could allow for minor amounts of H2O to remain in the liquid CO2 and thereby eliminate a costly dehydration step. Similarly, trace amounts of sulfur and nitrogen compounds common in flue gas streams are currently removed through expensive desulfurization and catalytic reduction processes. Provided these contaminants could be safely and permanently transported and stored in the geologic reservoir, retrofits of existing fossil-fuel plants could address comprehensive emissions reductions, including CO2 at perhaps nearly the same capital and operating cost. Because CO2-SO2 mixtures have never been commercially transported or injected, both experimental and theoretical work is needed to understand corrosion mechanisms of various steels in these gas mixtures containing varying amounts of water. Experiments were conducted with common tool steel (AISI-01) and pipeline steel (X65) immersed in liquid CO2 at room temperature containing ~1% SO2 and varying amounts of H2O (0 to 2500 ppmw). A threshold concentration of H2O in the liquid CO2-SO2 mixture was established based on the absence of visible surface corrosion. For example, experiments exposing steel to liquid CO2-SO2 containing ~300 ppmw H2O showed a delay in onset of visible corrosion products and minimal surface corrosion was visible after five days of testing. However increasing the water content to 760 ppmw produced extensive surface corrosion after 48 hours at room temperature. Surface characterization by SEM showed one type of morphology that included large circular features radiating outward from a central structure. Chemical analyses obtained by SEM-EDX indicate the phases contained mostly Fe and S with minor amounts of Mn. Corrosion products completely covering the metal coupon surface were identified by XRD as iron sulfite hydrate (FeSO3●3H2O), with lesser amounts of gravegliaite (MnSO3●3H2O), and rozenite (Fe(SO4)●(H2O)4).

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

NASA Astrophysics Data System (ADS)

Idris, M. I.; Weng, M. H.; Chan, H.-K.; Murphy, A. E.; Clark, D. T.; Young, R. A. R.; Ramsay, E. P.; Wright, N. G.; Horsfall, A. B.

2016-12-01

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance-voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm-3) or near interface traps at the interface of the gate oxide and the semiconductor (1012-1013 cm-2 eV-1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

NASA Astrophysics Data System (ADS)

Goddard, Lynford

2005-12-01

Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Non-local electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

Nanowire Lasers of Formamidinium Lead Halide Perovskites and Their Stabilized Alloys with Improved Stability

DOE PAGES

Fu, Yongping; Zhu, Haiming; Schrader, Alex W.; ...

2016-01-04

The excellent intrinsic optoelectronic properties of methylammonium lead halide perovskites (MAPbX 3, X = Br, I), such as high photoluminescence quantum efficiency, long carrier lifetime, and high gain coupled with the facile solution growth of nanowires make them promising new materials for ultralow-threshold nanowire lasers. However, their photo and thermal stabilities need to be improved for practical applications. Herein, we report a low-temperature solution growth of single crystal nanowires of formamidinium lead halide perovskites (FAPbX 3) that feature red-shifted emission and better thermal stability compared to MAPbX 3. We demonstrate optically pumped room-temperature near-infrared (~820 nm) and green lasing (~560more » nm) from FAPbI 3 (and MABr-stabilized FAPbI 3) and FAPbBr 3 nanowires with low lasing thresholds of several microjoules per square centimeter and high quality factors of about 1500–2300. More remarkably, the FAPbI 3 and MABr-stabilized FAPbI 3 nanowires display durable room-temperature lasing under ~10 8 shots of sustained illumination of 402 nm pulsed laser excitation (150 fs, 250 kHz), substantially exceeding the stability of MAPbI 3 (~10 7 laser shots). We further demonstrate tunable nanowire lasers in wider wavelength region from FA-based lead halide perovskite alloys (FA,MA)PbI 3 and (FA,MA)Pb(I,Br) 3 through cation and anion substitutions. The results suggest that formamidinium lead halide perovskite nanostructures could be more promising and stable materials for the development of light-emitting diodes and continuous-wave lasers.« less

Nanowire Lasers of Formamidinium Lead Halide Perovskites and Their Stabilized Alloys with Improved Stability.

PubMed

Fu, Yongping; Zhu, Haiming; Schrader, Alex W; Liang, Dong; Ding, Qi; Joshi, Prakriti; Hwang, Leekyoung; Zhu, X-Y; Jin, Song

2016-02-10

The excellent intrinsic optoelectronic properties of methylammonium lead halide perovskites (MAPbX3, X = Br, I), such as high photoluminescence quantum efficiency, long carrier lifetime, and high gain coupled with the facile solution growth of nanowires make them promising new materials for ultralow-threshold nanowire lasers. However, their photo and thermal stabilities need to be improved for practical applications. Herein, we report a low-temperature solution growth of single crystal nanowires of formamidinium lead halide perovskites (FAPbX3) that feature red-shifted emission and better thermal stability compared to MAPbX3. We demonstrate optically pumped room-temperature near-infrared (∼820 nm) and green lasing (∼560 nm) from FAPbI3 (and MABr-stabilized FAPbI3) and FAPbBr3 nanowires with low lasing thresholds of several microjoules per square centimeter and high quality factors of about 1500-2300. More remarkably, the FAPbI3 and MABr-stabilized FAPbI3 nanowires display durable room-temperature lasing under ∼10(8) shots of sustained illumination of 402 nm pulsed laser excitation (150 fs, 250 kHz), substantially exceeding the stability of MAPbI3 (∼10(7) laser shots). We further demonstrate tunable nanowire lasers in wider wavelength region from FA-based lead halide perovskite alloys (FA,MA)PbI3 and (FA,MA)Pb(I,Br)3 through cation and anion substitutions. The results suggest that formamidinium lead halide perovskite nanostructures could be more promising and stable materials for the development of light-emitting diodes and continuous-wave lasers.

Dimer formation and surface alloying: a STM study of lead on Cu(211)

NASA Astrophysics Data System (ADS)

Bartels, L.; Zöphel, S.; Meyer, G.; Henze, E.; Rieder, K.-H.

1997-02-01

We present a STM investigation of Pb adsorption on the Cu(211) surface in the temperature range between 30 K and room temperature. We observe three different kinds of ordered 1D Pb and PbCu chains (nanowires) located at the intrinsic step edges of the Cu(211) surface. On room temperature prepared samples, Pb is found to be incorporated into the step edges of the (211) surface. The first ordered structure consists of CuPb chains at the step edges (p(2 × disorder)) and is followed with increasing coverage by a close packed row of Pb-atoms (p(4 × disorder)). Preparation at low temperature yields Pb-dimers, and the first ordered structure is a row of Pb-dimers at the step edge (p(3 × disorder)) followed with increased coverage by a structure as described above. By systematic manipulation with the tunneling tip, we could get additional insight into the structural elements of the PbCu layer on the atomic scale. Furthermore, by measuring the threshold resistance to detach atoms from different ad-sites, we can approximately determine the binding energy and gain some insight into the thermodynamical parameters involved.

Thermal generation of spin current in epitaxial CoFe{sub 2}O{sub 4} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Er-Jia, E-mail: ejguophysics@gmail.com, E-mail: klaeui@uni-mainz.de; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830; Herklotz, Andreas

2016-01-11

The longitudinal spin Seebeck effect (LSSE) has been investigated in high-quality epitaxial CoFe{sub 2}O{sub 4} (CFO) thin films. The thermally excited spin currents in the CFO films are electrically detected in adjacent Pt layers due to the inverse spin Hall effect. The LSSE signal exhibits a linear increase with increasing temperature gradient, yielding a LSSE coefficient of ∼100 nV/K at room temperature. The temperature dependence of the LSSE is investigated from room temperature down to 30 K, showing a significant reduction at low temperatures, revealing that the total amount of thermally generated magnons decreases. Furthermore, we demonstrate that the spin Seebeck effectmore » is an effective tool to study the magnetic anisotropy induced by epitaxial strain, especially in ultrathin films with low magnetic moments.« less

Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

NASA Astrophysics Data System (ADS)

El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

2006-08-01

Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

PubMed

Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

2017-11-08

Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

Nanothermometer Based on Resonant Tunneling Diodes: From Cryogenic to Room Temperatures.

PubMed

Pfenning, Andreas; Hartmann, Fabian; Rebello Sousa Dias, Mariama; Castelano, Leonardo Kleber; Süßmeier, Christoph; Langer, Fabian; Höfling, Sven; Kamp, Martin; Marques, Gilmar Eugenio; Worschech, Lukas; Lopez-Richard, Victor

2015-06-23

Sensor miniaturization together with broadening temperature sensing range are fundamental challenges in nanothermometry. By exploiting a large temperature-dependent screening effect observed in a resonant tunneling diode in sequence with a GaInNAs/GaAs quantum well, we present a low dimensional, wide range, and high sensitive nanothermometer. This sensor shows a large threshold voltage shift of the bistable switching of more than 4.5 V for a temperature raise from 4.5 to 295 K, with a linear voltage-temperature response of 19.2 mV K(-1), and a temperature uncertainty in the millikelvin (mK) range. Also, when we monitor the electroluminescence emission spectrum, an optical read-out control of the thermometer is provided. The combination of electrical and optical read-outs together with the sensor architecture excel the device as a thermometer with the capability of noninvasive temperature sensing, high local resolution, and sensitivity.

Non-local opto-electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Jamet, Matthieu; Rortais, Fabien; Zucchetti, Carlo; Ghirardini, Lavinia; Ferrari, Alberto; Vergnaud, Celine; Widiez, Julie; Marty, Alain; Attane, Jean-Philippe; Jaffres, Henri; George, Jean-Marie; Celebrano, Michele; Isella, Giovanni; Ciccacci, Franco; Finazzi, Marco; Bottegoni, Federico

Non-local charge carriers injection/detection schemes lie at the foundation of information manipulation in integrated systems. The next generation electronics may operate on the spin instead of the charge and germanium appears as the best hosting material to develop such spintronics for its compatibility with mainstream silicon technology and long spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin orientation. In this presentation, we demonstrate injection of pure spin currents in Ge, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, by using lithographed nanostructures to diffuse the light and create an in-plane polarized electron spin population. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect across a Pt stripe. Supported by the ANR project SiGeSPIN #ANR-13-BS10-0002 and the CARIPLO project SEARCH-IV (Grant 2013-0623).

Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K

NASA Astrophysics Data System (ADS)

Vicentis Caparroz, Luis Felipe; Mendes Bordallo, Caio Cesar; Martino, Joao Antonio; Simoen, Eddy; Claeys, Cor; Ghedini Der Agopian, Paula

2018-06-01

This paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 K, focusing on the threshold voltage (VTH), subthreshold swing (SS), the Early voltage VEA, transistor efficiency and the intrinsic gain voltage (AV) for 3 different channel widths. The p-channel devices showed a greater immunity to radiation than the n-channel ones, when considering the basic parameters thanks to the back conduction turn-off tendency, while from the analog parameters point of view, both transistor types presented a similar response to proton radiation at strong inversion.

Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.

PubMed

Liu, Yuanda; Ang, Kah-Wee

2017-07-25

Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.

Hybrid solar cells with outstanding short-circuit currents based on a room temperature soft-chemical strategy: the case of P3HT:Ag2S.

PubMed

Lei, Yan; Jia, Huimin; He, Weiwei; Zhang, Yange; Mi, Liwei; Hou, Hongwei; Zhu, Guangshan; Zheng, Zhi

2012-10-24

P3HT:Ag(2)S hybrid solar cells with broad absorption from the UV to NIR band were directly fabricated on ITO glass by using a room temperature, low energy consumption, and low-cost soft-chemical strategy. The resulting Ag(2)S nanosheet arrays facilitate the construction of a perfect percolation structure with organic P3HT to form ordered bulk heterojunctions (BHJ); without interface modification, the assembled P3HT:Ag(2)S device exhibits outstanding short-circuit current densities (J(sc)) around 20 mA cm(-2). At the current stage, the optimized device exhibited a power conversion efficiency of 2.04%.

Non-haloaluminate room-temperature ionic liquids in electrochemistry--a review.

PubMed

Buzzeo, Marisa C; Evans, Russell G; Compton, Richard G

2004-08-20

Some twenty-five years after they first came to prominence as alternative electrochemical solvents, room temperature ionic liquids (RTILs) are currently being employed across an increasingly wide range of chemical fields. This review examines the current state of ionic liquid-based electrochemistry, with particular focus on the work of the last decade. Being composed entirely of ions and possesing wide electrochemical windows (often in excess of 5 volts), it is not difficult to see why these compounds are seen by electrochemists as attractive potential solvents. Accordingly, an examination of the pertinent properties of ionic liquids is presented, followed by an assessment of their application to date across the various electrochemical disciplines, concluding with an outlook viewing current problems and directions.

Tensile Stress Rupture Behavior of a Woven Ceramic Matrix Composite in Humid Environments at Intermediate Temperature — Part I

NASA Astrophysics Data System (ADS)

Larochelle, K. J.; Morscher, G. N.

2006-05-01

The stress rupture strength of the SYL-iBN/BN/SiC composite was evaluated at 550 and 750 °C with moisture content levels of 0.0, 0.2, and 0.6 atm partial pressure of water vapor, pH2O. The stress rupture strengths decreased with respect to time with the rate of decrease related to the temperature and the amount of moisture content. In all cases the degradation was more severe initially and then approached a run-out threshold level. The thresholds were reached at approximately 100+, 60, 80 h for the 550 °C with 0.0, 0.2, and 0.6 pH2O, respectively. The thresholds were reached at approximately 40, 20, and 10 h for the 750 °C cases. The interpolated stress rupture strengths at 100 h for 0.0, 0.2, and 0.6 pH2O at 550 °C were 82%, 68%, and 51% of the room temperature monotonic tensile strength. At 750 °C these strengths were 67%, 51%, and 50%. Analysis of Field Emission Scanning Electron Microscopy images showed evidence of embrittlement of the fiber/matrix interphase. Little to no embrittlement was observed at both temperatures with 0.0 pH2O. At both 550 and 750 °C with 0.2 and 0.6 pH2O, evidence of embrittlement increased with temperature and test duration with the most extensive embrittlement observed at 750 °C with 0.6 pH2O.

Optically erasable and rewritable solid-state holograms.

NASA Technical Reports Server (NTRS)

Gaylord, T. K.; Rabson, T. A.; Tittel, F. K.

1972-01-01

Optical holographic storage in single-crystal LiNbO3 is described which can be optically erased at room temperature and then rewritten with no degradation in efficiency or writing rate. The diffraction efficiencies associated with the process are about 0.0001. Some variations from previously obtained results include a lack of threshold power density for writing, very-long-term persistence of the stored hologram, and a lack of a dependence of the diffracted intensity on the polarization of the readout beam.

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

PubMed Central

2013-01-01

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

Growth and performance research of Tb3Ga5O12 magneto-optical crystal

NASA Astrophysics Data System (ADS)

Jin, Weizhao; Ding, Jingxin; Guo, Li; Gu, Qi; Li, Chun; Su, Liangbi; Wu, Anhua; Zeng, Fanming

2018-02-01

Tb3Ga5O12 (TGG) crystal was grown successfully by the Czochralski method in an iridium crucible with radio frequency (RF)-induced heating under high purity 80%N2 + 20% CO2 atmosphere. None impurity peaks could be found in the XRD patterns compared to standard cards of TGG. Transmittance spectrum was investigated in the visible-near infrared region (VIS-NIR) at room temperature, which indicated the TGG crystal had high transmittance at 500-1100 nm. The Faraday rotations, Verdet constants and magnetic susceptibility of (1 1 1), (1 0 0), (1 1 0) of as-grown crystal have been discussed in detail confirming that Faraday effects of the TGG crystals are anisotropic which is related with magnetic susceptibility, and the Faraday effects of [1 1 1] have been proved to be the best, and the Verdet constants of [1 1 1] was also investigated at different wavelength at room temperature. The thermal conductivity and laser induced damage threshold of the crystal were also analyzed in detailed.

Impact-initiated damage thresholds in composites

NASA Technical Reports Server (NTRS)

Sharma, A. V.

1980-01-01

An experimental investigation was conducted to study the effect of low velocity projectile impact on the sandwich-type structural components. The materials used in the fabrication of the impact surface were graphite-, Kevlar-, and boron-fibers with appropriate epoxy matrices. The testing of the specimens was performed at moderately low- and high-temperatures as well as at room temperature to assess the impact-initiated strength degradation of the laminates. Eleven laminates with different stacking sequences, orientations, and thicknesses were tested. The low energy projectile impact is considered to simulate the damage caused by runway debris, dropping of the hand tools during servicing, etc., on the secondary aircraft structures fabricated with the composite materials. The results show the preload and the impact energy combinations necessary to cause catastrophic failures in the laminates tested. A set of faired curves indicating the failure thresholds is shown separately for the tension- and compression-loaded laminates. The specific-strengths and -moduli for the various laminates tested are also given.

Managing fever in children: a national survey of parents' knowledge and practices in France.

PubMed

Bertille, Nathalie; Fournier-Charrière, Elisabeth; Pons, Gérard; Chalumeau, Martin

2013-01-01

Identifying targets to improve parental practices for managing fever in children is the first step to reducing the overloaded healthcare system related to this common symptom. We aimed to study parents' knowledge and practices and their determinants in managing fever symptoms in children in France as compared with current recommendations. We conducted an observational national study between 2007 and 2008 of French general practitioners, primary care pediatricians and pharmacists. These healthcare professionals (HPs) were asked to include 5 consecutive patients from 1 month to 12 years old with fever for up to 48 hr who were accompanied by a family member. Parents completed a questionnaire about their knowledge of fever in children and their attitudes about the current fever episode. We used a multilevel logistic regression model to assess the joint effects of patient- and HP-level variables. In all, 1,534 HPs (participation rate 13%) included 6,596 children. Parental concordance with current recommendations for temperature measurement methods, the threshold for defining fever, and physical (oral hydration, undressing, room temperature) and drug treatment was 89%, 61%, 15%, and 23%, respectively. Multivariate multi-level analyses revealed a significant HP effect. In general, high concordance with recommendations was associated with high educational level of parents and the HP consulted being a pediatrician. In France, parents' knowledge and practices related to managing fever symptoms in children frequently differ from recommendations. Targeted health education interventions are needed to effectively manage fever symptoms in children.

Managing Fever in Children: A National Survey of Parents' Knowledge and Practices in France

PubMed Central

Bertille, Nathalie; Fournier-Charrière, Elisabeth; Pons, Gérard; Chalumeau, Martin

2013-01-01

Introduction Identifying targets to improve parental practices for managing fever in children is the first step to reducing the overloaded healthcare system related to this common symptom. We aimed to study parents' knowledge and practices and their determinants in managing fever symptoms in children in France as compared with current recommendations. Methods We conducted an observational national study between 2007 and 2008 of French general practitioners, primary care pediatricians and pharmacists. These healthcare professionals (HPs) were asked to include 5 consecutive patients from 1 month to 12 years old with fever for up to 48 hr who were accompanied by a family member. Parents completed a questionnaire about their knowledge of fever in children and their attitudes about the current fever episode. We used a multilevel logistic regression model to assess the joint effects of patient- and HP-level variables. Results In all, 1,534 HPs (participation rate 13%) included 6,596 children. Parental concordance with current recommendations for temperature measurement methods, the threshold for defining fever, and physical (oral hydration, undressing, room temperature) and drug treatment was 89%, 61%, 15%, and 23%, respectively. Multivariate multi-level analyses revealed a significant HP effect. In general, high concordance with recommendations was associated with high educational level of parents and the HP consulted being a pediatrician. Conclusions In France, parents' knowledge and practices related to managing fever symptoms in children frequently differ from recommendations. Targeted health education interventions are needed to effectively manage fever symptoms in children. PMID:24391772

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Shimazu, Yoshihiro; Tashiro, Mitsuki; Sonobe, Satoshi; Takahashi, Masaki

2016-07-01

Molybdenum disulfide (MoS2) has recently received much attention for nanoscale electronic and photonic applications. To explore the intrinsic properties and enhance the performance of MoS2-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. Here, we report the effects of environmental gases on the transport properties of back-gated multilayered MoS2 field-effect transistors. Comparisons between different gases (oxygen, nitrogen, and air and nitrogen with varying relative humidities) revealed that water molecules acting as charge-trapping centers are the main cause of hysteresis in the transfer characteristics. While the hysteresis persisted even after pumping out the environmental gas for longer than 10 h at room temperature, it disappeared when the device was cooled to 240 K, suggesting a considerable increase in the time constant of the charge trapping/detrapping at these modestly low temperatures. The suppression of the hysteresis or instability in the easily attainable temperature range without surface passivation is highly advantageous for the device application of this system. The humidity dependence of the threshold voltages in the transfer curves indicates that the water molecules dominantly act as hole-trapping centers. A strong dependence of the on-state current on oxygen pressure was also observed.

Ambient noise levels in industrial audiometric test rooms.

PubMed

Frank, T; Williams, D L

1994-05-01

In 1983 the Occupational Safety and Health Administration (OSHA) specified maximum permissible ambient noise levels (MPANLs) that would allow valid hearing threshold measurements in an audiometric test room. However, ambient noise sound pressure levels (SPLs) in rooms used for industrial hearing tests are unknown. The present study reports octave band (125 to 8000 Hz) ambient noise SPLs measured in 490 single-walled prefabricated audiometric test rooms located in industrial settings that were obtained from eight sources. The ambient noise SPLs were highest in the lower frequencies and decreased as frequency increased. All 490 rooms met the OSHA MPANLs. Fortunately, the ambient noise SPLs were considerably lower than the OSHA MPANLs, since previous research has demonstrated that hearing thresholds cannot be obtained down to 0-dB HL in a test room having ambient noise levels equal to the OSHA MPANLs. In fact, 33%, or 162 of the 490 test rooms, met the more stringent MPANLs recently specified by the American National Standards Institute (ANSI) for industrial hearing testing. Given that the OSHA MPANLs are too high and that the test room ambient noise SPLs were considerably less than the OSHA MPANLs, that authors recommend that the OSHA MPANLs be revised to the more stringent ANSI 1991 MPANLs so that hearing thresholds for baseline and annual audiograms can be measured down to 0-dB HL.

Evaluation of exposures of hospital employees to anesthetic gases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lambeth, J.D.

1988-01-01

Hospital employees who work in hospital operating and recovery rooms are often exposed to a number of anesthetic gases. There is evidence to support the belief that such exposures have led to higher rates of miscarriages and spontaneous abortions of pregnancies among women directly exposed to these gases than among women not exposed. Most of the studies assessing exposure levels were conducted prior to the widespread use of scavenging systems. Air sampling was conducted in hospital operatories and recovery rooms of three large hospitals to assess the current exposure levels in these areas and determine the effectiveness of these systemsmore » in reducing exposures to fluoride-containing anesthetic gases. It was determined that recovery-room personnel are exposed to levels of anesthesia gases that often approach and exceed the recommended Threshold Limit Value-Time Weighted Average (TLV-TWA) of 2.0 ppm. Recovery-room personnel do not have the protection from exposure provided by scavenging systems in operating rooms. Operating-room personnel were exposed to anesthesia gas levels above the TLV-TWA only when patients were masked, or connected and disconnected from the scavenging systems. Recovery-room personnel also need to be protected from exposure to anesthesia gases by a scavenging system.« less

Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure

NASA Astrophysics Data System (ADS)

Chou, Kuan-Yu; Hsu, Nai-Wen; Su, Yi-Hsin; Chou, Chung-Tao; Chiu, Po-Yuan; Chuang, Yen; Li, Jiun-Yun

2018-02-01

We investigate DC characteristics of a two-dimensional electron gas (2DEG) in an undoped Si/SiGe heterostructure and its temperature dependence. An insulated-gate field-effect transistor was fabricated, and transfer characteristics were measured at 4 K-300 K. At low temperatures (T < 45 K), source electrons are injected into the buried 2DEG channel first and drain current increases with the gate voltage. By increasing the gate voltage further, the current saturates followed by a negative transconductance observed, which can be attributed to electron tunneling from the buried channel to the surface channel. Finally, the drain current is saturated again at large gate biases due to parallel conduction of buried and surface channels. By increasing the temperature, an abrupt increase in threshold voltage is observed at T ˜ 45 K and it is speculated that negatively charged impurities at the Al2O3/Si interface are responsible for the threshold voltage shift. At T > 45 K, the current saturation and negative transconductance disappear and the device acts as a normal transistor.

Multiplicities and thermal runaway of current leads for superconducting magnets

NASA Astrophysics Data System (ADS)

Krikkis, Rizos N.

2017-04-01

The multiple solutions of conduction and vapor cooled copper leads modeling current delivery to a superconducting magnet have been numerically calculated. Both ideal convection and convection with a finite heat transfer coefficient for an imposed coolant mass flow rate have been considered. Because of the nonlinearities introduced by the temperature dependent material properties, two solutions exist, one stable and one unstable regardless of the cooling method. The limit points separating the stable form the unstable steady states form the blow-up threshold beyond which, any further increase in the operating current results in a thermal runway. An interesting finding is that the multiplicity persists even when the cold end temperature is raised above the liquid nitrogen temperature. The effect of various parameters such as the residual resistivity ratio, the overcurrent and the variable conductor cross section on the bifurcation structure and their stabilization effect on the blow-up threshold is also evaluated.

High-Operating Temperature HgCdTe: A Vision for the Near Future

NASA Astrophysics Data System (ADS)

Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

2016-09-01

We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the background radiation can be reduced by 90%, then room-temperature operation is possible.

Challenges and solutions for realistic room simulation

NASA Astrophysics Data System (ADS)

Begault, Durand R.

2002-05-01

Virtual room acoustic simulation (auralization) techniques have traditionally focused on answering questions related to speech intelligibility or musical quality, typically in large volumetric spaces. More recently, auralization techniques have been found to be important for the externalization of headphone-reproduced virtual acoustic images. Although externalization can be accomplished using a minimal simulation, data indicate that realistic auralizations need to be responsive to head motion cues for accurate localization. Computational demands increase when providing for the simulation of coupled spaces, small rooms lacking meaningful reverberant decays, or reflective surfaces in outdoor environments. Auditory threshold data for both early reflections and late reverberant energy levels indicate that much of the information captured in acoustical measurements is inaudible, minimizing the intensive computational requirements of real-time auralization systems. Results are presented for early reflection thresholds as a function of azimuth angle, arrival time, and sound-source type, and reverberation thresholds as a function of reverberation time and level within 250-Hz-2-kHz octave bands. Good agreement is found between data obtained in virtual room simulations and those obtained in real rooms, allowing a strategy for minimizing computational requirements of real-time auralization systems.

Three-dimensional scanning force/tunneling spectroscopy at room temperature.

PubMed

Sugimoto, Yoshiaki; Ueda, Keiichi; Abe, Masayuki; Morita, Seizo

2012-02-29

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated.

Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Craig, A. P.; Percy, B.; Marshall, A. R. J.

2015-05-18

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

Emittance measurements of Space Shuttle orbiter reinforced carbon-carbon

NASA Technical Reports Server (NTRS)

Caram, Jose M.; Bouslog, Stanley A.; Cunnington, George R., Jr.

1992-01-01

The spectral and total normal emittance of the Reinforced Carbon-Carbon (RCC) used on Space Shuttle nose cap and wing leading edges has been measured at room temperature and at surface temperatures of 1200 to 2100 K. These measurements were made on virgin and two flown RCC samples. Room temperature directional emittance data were also obtained and were used to determine the total hemispherical emittance of RCC as a function of temperature. Results of the total normal emittance for the virgin samples showed good agreement with the current RCC emittance design curve; however, the data from the flown samples showed an increase in the emittance at high temperature possibly due to exposure from flight environments.

InGaAs(0.98 μm)/GaAs vertical cavity surface emitting laser grown by gas-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.; Liang, B. W.; Wang, S. Y.; Yang, L.; Mars, D. E.

1994-03-01

We report the growth of InGaAs/GaAs vertical cavity surface emitting lasers (VCSELs) with an emission wavelength at 0.98 μm by gas-source molecular beam epitaxy (GSMBE). The surface emitting laser diodes are composed of a 15-pair p + GaAs/AlAs graded mirror with a 3-quantum well In 0.2Ga 0.8As active region and a 16.5-pair n + GaAs/AlAs grade mirror on an n + GaAs substrate. We use a simple interferometric technique for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible Bragg reflector. This technique uses an optical pyrometer to measure apparent temperature oscillations of the growing epi-layer surface. These measurements can be performed with continuous substrate rotation and without any growth interruption. The growing layer thickness can then be related to the apparent temperature oscillation spectrum. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the center of the mirror reflectivity and the Fabry-Pérot resonance at the desired wavelength can be reproducibly obtained. The reproducibility of the center wavelength and FWHM of the reflectivity stop-band with a variation of ≤ 0.2% was achieved in the AlAs/GaAs mirror stacks grown using this technique. The VCSEL structures with a variation of the Fabry-Pérot wavelength of ≤ 0.4% have been grown. Bottom-emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 6 mA are measured at room temperature for 10 and 25 μm diameter lasers, respectively. Output powers higher than 15 mW are obtained from these devices. These devices have an external quantum efficiency higher than 40%.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Toward hydrogen detection at room temperature with printed ZnO nanoceramics films activated with halogen lighting

NASA Astrophysics Data System (ADS)

Nguyen, Van Son; Jubera, Véronique; Garcia, Alain; Debéda, Hélène

2015-12-01

Though semiconducting properties of ZnO have been extensively investigated under hazardous gases, research is still necessary for low-cost sensors working at room temperature. Study of printed ZnO nanopowders-based sensors has been undertaken for hydrogen detection. A ZnO paste made with commercial nanopowders is deposited onto interdigitated Pt electrodes and sintered at 400 °C. The ZnO layer structure and morphology are first examined by XRD, SEM, AFM and emission/excitation spectra prior to the study of the effect of UV-light on the electrical conduction of the semiconductor oxide. The response to hydrogen exposure is subsequently examined, showing that low UV-light provided by halogen lighting enhances the gas response and allows detection at room temperature with gas responses similar to those obtained in dark conditions at 150 °C. A gas response of 44% (relative change in current) under 300 ppm is obtained at room temperature. Moreover, it is demonstrated that very low UV-light power (15 μW/mm2) provided by the halogen lamp is sufficient to give sensitivities as high as those for much higher powers obtained with a UV LED (7.7 mW/mm2). These results are comparable to those obtained by others for 1D or 2D ZnO nanostructures working at room temperature or at temperatures up to 250 °C.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

PubMed

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-11-22

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

PubMed Central

Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

2011-01-01

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns. PMID:22109527

Small Cold Temperature Instrument Packages

NASA Astrophysics Data System (ADS)

Clark, P. E.; Millar, P. S.; Yeh, P. S.; Feng, S.; Brigham, D.; Beaman, B.

We are developing a small cold temperature instrument package concept that integrates a cold temperature power system with ultra low temperature ultra low power electronics components and power supplies now under development into a 'cold temperature surface operational' version of a planetary surface instrument package. We are already in the process of developing a lower power lower temperature version for an instrument of mutual interest to SMD and ESMD to support the search for volatiles (the mass spectrometer VAPoR, Volatile Analysis by Pyrolysis of Regolith) both as a stand alone instrument and as part of an environmental monitoring package. We build on our previous work to develop strategies for incorporating Ultra Low Temperature/Ultra Low Power (ULT/ULP) electronics, lower voltage power supplies, as well as innovative thermal design concepts for instrument packages. Cryotesting has indicated that our small Si RHBD CMOS chips can deliver >80% of room temperature performance at 40K (nominal minimum lunar surface temperature). We leverage collaborations, past and current, with the JPL battery development program to increase power system efficiency in extreme environments. We harness advances in MOSFET technology that provide lower voltage thresholds for power switching circuits incorporated into our low voltage power supply concept. Conventional power conversion has a lower efficiency. Our low power circuit concept based on 'synchronous rectification' could produce stable voltages as low as 0.6 V with 85% efficiency. Our distributed micro-battery-based power supply concept incorporates cold temperature power supplies operating with a 4 V or 8 V battery. This work will allow us to provide guidelines for applying the low temperature, low power system approaches generically to the widest range of surface instruments.

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

NASA Technical Reports Server (NTRS)

Danchenko, V.; Fang, P. H.; Brashears, S. S.

1982-01-01

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Line Coupling Effects in the Isotropic Raman Spectra of N2: A Quantum Calculation at Room Temperature

NASA Technical Reports Server (NTRS)

Thibault, Franck; Boulet, Christian; Ma, Qiancheng

2014-01-01

We present quantum calculations of the relaxation matrix for the Q branch of N2 at room temperature using a recently proposed N2-N2 rigid rotor potential. Close coupling calculations were complemented by coupled states studies at high energies and provide about 10200 two-body state-to state cross sections from which the needed one-body cross-sections may be obtained. For such temperatures, convergence has to be thoroughly analyzed since such conditions are close to the limit of current computational feasibility. This has been done using complementary calculations based on the energy corrected sudden formalism. Agreement of these quantum predictions with experimental data is good, but the main goal of this work is to provide a benchmark relaxation matrix for testing more approximate methods which remain of a great utility for complex molecular systems at room (and higher) temperatures.

Tunable transport gap in narrow bilayer graphene nanoribbons

PubMed Central

Yu, Woo Jong; Duan, Xiangfeng

2013-01-01

The lack of a bandgap makes bulk graphene unsuitable for room temperature transistors with a sufficient on/off current ratio. Lateral constriction of charge carriers in graphene nanostructures or vertical inversion symmetry breaking in bilayer graphene are two potential strategies to mitigate this challenge, but each alone is insufficient to consistently achieve a large enough on/off ratio (e.g. > 1000) for typical logic applications. Herein we report the combination of lateral carrier constriction and vertical inversion symmetry breaking in bilayer graphene nanoribbons (GNRs) to tune their transport gaps and improve the on/off ratio. Our studies demonstrate that the on/off current ratio of bilayer GNRs can be systematically increased upon applying a vertical electric field, to achieve a largest on/off current ratio over 3000 at room temperature. PMID:23409239

Recommendations to Improve Employee Thermal Comfort When Working in 40°F Refrigerated Cold Rooms.

PubMed

Ceballos, Diana; Mead, Kenneth; Ramsey, Jessica

2015-01-01

Cold rooms are commonly used for food storage and preparation, and are usually kept around 40°F following food safety guidelines. Some food preparation employees may spend 8 or more hours inside cold rooms. These employees may not be aware of the risks associated with mildly cold temperatures, dampness, and limited ventilation. We performed an evaluation of cold rooms at an airline catering facility because of concerns with exposure to cold temperatures. We spoke with and observed employees in two cold rooms, reviewed daily temperature logs, evaluated employee's physical activity, work/rest schedule, and protective clothing. We measured temperature, percent relative humidity, and air velocities at different work stations inside the cold rooms. We concluded that thermal comfort concerns perceived by cold room employees may have been the result of air drafts at their workstations, insufficient use of personal protective equipment due to dexterity concerns, work practices, and lack of knowledge about good health and safety practices in cold rooms. These moderately cold work conditions with low air velocities are not well covered in current occupational health and safety guidelines, and wind chill calculations do not apply. We provide practical recommendations to improve thermal comfort of cold room employees. Engineering control recommendations include the redesigning of air deflectors and installing of suspended baffles. Administrative controls include the changing out of wet clothing, providing hand warmers outside of cold rooms, and educating employees on cold stress. We also recommended providing more options on personal protective equipment. However, there is a need for guidelines and educational materials tailored to employees in moderately cold environments to improve thermal comfort and minimize health and safety problems.

Recommendations to Improve Employee Thermal Comfort When Working in 40°F Refrigerated Cold Rooms

PubMed Central

Ceballos, Diana; Mead, Kenneth; Ramsey, Jessica

2015-01-01

Cold rooms are commonly used for food storage and preparation, and are usually kept around 40°F following food safety guidelines. Some food preparation employees may spend 8 or more hours inside cold rooms. These employees may not be aware of the risks associated with mildly cold temperatures, dampness, and limited ventilation. We performed an evaluation of cold rooms at an airline catering facility because of concerns with exposure to cold temperatures. We spoke with and observed employees in two cold rooms, reviewed daily temperature logs, evaluated employee’s physical activity, work/rest schedule, and protective clothing. We measured temperature, percent relative humidity, and air velocities at different work stations inside the cold rooms. We concluded that thermal comfort concerns perceived by cold room employees may have been the result of air drafts at their workstations, insufficient use of personal protective equipment due to dexterity concerns, work practices, and lack of knowledge about good health and safety practices in cold rooms. These moderately cold work conditions with low air velocities are not well covered in current occupational health and safety guidelines, and wind chill calculations do not apply. We provide practical recommendations to improve thermal comfort of cold room employees. Engineering control recommendations include the redesigning of air deflectors and installing of suspended baffles. Administrative controls include the changing out of wet clothing, providing hand warmers outside of cold rooms, and educating employees on cold stress. We also recommended providing more options on personal protective equipment. However, there is a need for guidelines and educational materials tailored to employees in moderately cold environments to improve thermal comfort and minimize health and safety problems. PMID:25961447

PRETREATING THORIUM FOR ELECTROPLATING

DOEpatents

Beach, J.G.; Schaer, G.R.

1959-07-28

A method is presented for pretreating a thorium surface prior to electroplating the surface. The pretreatment steps of the invention comprise cleaning by vapor blasting the surface, anodically pickling in a 5 to 15% by volume aqueous hydrochloric acid bath with a current of 125 to 250 amp/sq ft for 3 to 5 min at room temperature, chemically pickling the surface in a 5 to 15% by volume of aqueous sulfuric acid for 3 to 5 min at room temperature, and rinsing the surface with water.

A Probabilistic Model for Estimating the Depth and Threshold Temperature of C-fiber Nociceptors

PubMed Central

Dezhdar, Tara; Moshourab, Rabih A.; Fründ, Ingo; Lewin, Gary R.; Schmuker, Michael

2015-01-01

The subjective experience of thermal pain follows the detection and encoding of noxious stimuli by primary afferent neurons called nociceptors. However, nociceptor morphology has been hard to access and the mechanisms of signal transduction remain unresolved. In order to understand how heat transducers in nociceptors are activated in vivo, it is important to estimate the temperatures that directly activate the skin-embedded nociceptor membrane. Hence, the nociceptor’s temperature threshold must be estimated, which in turn will depend on the depth at which transduction happens in the skin. Since the temperature at the receptor cannot be accessed experimentally, such an estimation can currently only be achieved through modeling. However, the current state-of-the-art model to estimate temperature at the receptor suffers from the fact that it cannot account for the natural stochastic variability of neuronal responses. We improve this model using a probabilistic approach which accounts for uncertainties and potential noise in system. Using a data set of 24 C-fibers recorded in vitro, we show that, even without detailed knowledge of the bio-thermal properties of the system, the probabilistic model that we propose here is capable of providing estimates of threshold and depth in cases where the classical method fails. PMID:26638830

Alternating current conduction studies on polypyrrole-iron nanocomposite at room temperature

NASA Astrophysics Data System (ADS)

Kumar, T. G. Naveen; Megha, R.; Revanasiddappa, M.; Ravikiran, Y. T.; Kumari, S. C. Vijaya

2018-05-01

In the present work, Polypyrrole (PPy) and Polypyrrole-Iron (PPy-Fe) nanocomposite were synthesized separately by chemical polymerisation method and then they were structurally characterised by Fourier transform infrared spectroscopy (FTIR) and Transmission electron microscopy (TEM) techniques. The alternate current (AC) response characteristics at room temperature of PPy and the composite were comparatively studied in the frequency range 100Hz-1MHz. The real part of conductivities of both PPy and the composite were interpreted as power law of frequency and the frequency exponent s was found to lie in the range 0< s<1 in both the cases. The nanocomposite has shown significant improvement in conductivity as compared to PPy.

Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

NASA Astrophysics Data System (ADS)

Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

2018-05-01

We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

Synthesis of low-moment CrVTiAl: a potential room temperature spin filter

NASA Astrophysics Data System (ADS)

Stephen, Gregory; Wolfsberg, Jacob; McDonald, Ian; Lejeune, Brian; Lewis, Laura; Heiman, Don

The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials - semiconductors with unequal band gaps for each spin channel - can generate spin-polarized current without the need for spin-polarizing electrodes. In addition, a spin-filter material with zero magnetic moment would have the advantage of not producing fringing fields to interfere with neighboring components. Several quaternary Heusler compounds have recently been predicted to have spin-filter properties and Curie temperatures TC >1000 K. In this work, CrVTiAl has been synthesized in the Y-type Heusler structure, as confirmed by X-ray diffractometry. Magnetization measurements exhibit an exceptionally small temperature-independent moment of 10-3μB /f.u. up to 400 K, a result that is consistent with zero-moment ferrimagnetism. In addition, temperature dependent resistivity measurements reveal the existence of a semiconducting conduction channel. These results suggest that CrVTiAl is a promising candidate for future spintronic devices.

Hybrid indium phosphide-on-silicon nanolaser diode

NASA Astrophysics Data System (ADS)

Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

2017-04-01

The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption.

PubMed

Vurgaftman, I; Bewley, W W; Canedy, C L; Kim, C S; Kim, M; Merritt, C D; Abell, J; Lindle, J R; Meyer, J R

2011-12-13

The interband cascade laser differs from any other class of semiconductor laser, conventional or cascaded, in that most of the carriers producing population inversion are generated internally, at semimetallic interfaces within each stage of the active region. Here we present simulations demonstrating that all previous interband cascade laser performance has suffered from a significant imbalance of electron and hole densities in the active wells. We further confirm experimentally that correcting this imbalance with relatively heavy n-type doping in the electron injectors substantially reduces the threshold current and power densities relative to all earlier devices. At room temperature, the redesigned devices require nearly two orders of magnitude less input power to operate in continuous-wave mode than the quantum cascade laser. The interband cascade laser is consequently the most attractive option for gas sensing and other spectroscopic applications requiring low output power and minimum heat dissipation at wavelengths extending from 3 μm to beyond 6 μm.

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerutti, L.; Rodriguez, J.-B.; Madiomanana, K.

We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30more » mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.« less

Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

NASA Astrophysics Data System (ADS)

Mohamed, A. H.; Missous, M.; Lai, K. T.; Haywood, S. K.

2006-06-01

A strain-compensated AlAs/InxGa1-xAs/AlAs/InyAl1-yAs (x ap 0.8, y ap 0.5) quantum well infrared photodetector (QWIP) structure was grown by molecular beam epitaxy (MBE). Conditions of exact stoichiometric growth were applied at a temperature of ~420 °C to produce structures capable of detecting IR radiation in the 2-5 µm mid-infrared spectrum. Double crystal x-ray diffraction (DCXRD) and room temperature photoluminescence (PL) experiments confirmed the excellent structural characteristics of the grown material system. A strong room temperature intersubband absorption peak was observed at a wavelength of 2.16 µm. Current-voltage (I-V) measurements as a function of temperature were carried out to electrically characterize the fabricated QWIP devices yielding devices working under background limited infrared photodetection (BLIP) conditions at 270 K. From the I-V curves, an activation energy of 270 meV at zero bias was extracted. This is in good agreement with a current transport mechanism which is dominated by thermionic emission. Photocurrent measurements were carried out and we demonstrate devices that are capable of working at a temperature as high as 270 K at a wavelength of 2.1 µm. The experimental results are in excellent agreement with the modelled values.

Noninvasive liver iron measurements with a room-temperature susceptometer

PubMed Central

Avrin, W F; Kumar, S

2011-01-01

Magnetic susceptibility measurements on the liver can quantify iron overload accurately and noninvasively. However, established susceptometer designs, using Superconducting QUantum Interference Devices (SQUIDs) that work in liquid helium, have been too expensive for widespread use. This paper presents a less expensive liver susceptometer that works at room temperature. This system uses oscillating magnetic fields, which are produced and detected by copper coils. The coil design cancels the signal from the applied field, eliminating noise from fluctuations of the source-coil current and sensor gain. The coil unit moves toward and away from the patient at 1 Hz, cancelling drifts due to thermal expansion of the coils. Measurements on a water phantom indicated instrumental errors less than 30 μg of iron per gram of wet liver tissue, which is small compared with other errors due to the response of the patient’s body. Liver iron measurements on eight thalassemia patients yielded a correlation coefficient r=0.98 between the room-temperature susceptometer and an existing SQUID. These results indicate that the fundamental accuracy limits of the room-temperature susceptometer are similar to those of the SQUID. PMID:17395991

Enhancement of high dielectric permittivity in CaCu3Ti4O12/RuO2 composites in the vicinity of the percolation threshold

NASA Astrophysics Data System (ADS)

Mukherjee, Rupam; Lawes, Gavin; Nadgorny, Boris

2014-08-01

We observe the large enhancement in the dielectric permittivity near the percolation threshold in a composite nanoparticle system consisting of metallic RuO2 grains embedded into CaCu3Ti4O12 (CCTO) matrix and annealed at 1100 °C. To understand the nature of the dielectric response, we prepared CCTO by using standard solid state and sol-gel processes, with the relative permittivity found to be on the order of 103-104 at 10 kHz. For RuO2/CCTO composites, an increase in the real part of the dielectric permittivity by approximately an order of magnitude is observed in the vicinity of the percolation threshold, with moderate losses at room temperature. The critical exponent of dielectric permittivity and conductivity of these composites are lower than universal value (0.8-1). In these composite systems, both Maxwell-Wagner and percolation effects have been found responsible for the enhancement of dielectric permittivity.

Robust Subwavelength Single-Mode Perovskite Nanocuboid Laser.

PubMed

Liu, Zhengzheng; Yang, Jie; Du, Juan; Hu, Zhiping; Shi, Tongchao; Zhang, Zeyu; Liu, Yanqi; Tang, Xiaosheng; Leng, Yuxin; Li, Ruxin

2018-05-14

On-chip photonic information processing systems require great research efforts toward miniaturization of the optical components. However, when approaching the classical diffraction limit, conventional dielectric lasers with all dimensions in nanoscale are difficult to realize due to the ultimate miniaturization limit of the cavity length and the extremely high requirement of optical gain to overcome the cavity loss. Herein, we have succeeded in reducing the laser size to subwavelength scale in three dimensions using an individual CsPbBr 3 perovskite nanocuboid. Even though the side length of the nanocuboid laser is only ∼400 nm, single-mode Fabry-Pérot lasing at room temperature with laser thresholds of 40.2 and 374 μJ/cm 2 for one- and two-photon excitation has been achieved, respectively, with the corresponding quality factors of 2075 and 1859. In addition, temperature-insensitive properties from 180 to 380 K have been demonstrated. The physical volume of a CsPbBr 3 nanocuboid laser is only ∼0.49λ 3 (where λ is the lasing wavelength in air). Its three-dimensional subwavelength size, excellent stable lasing performance at room temperature, frequency up-conversion ability, and temperature-insensitive properties may lead to a miniaturized platform for nanolasers and integrated on-chip photonic devices in nanoscale.

On the temperature prediction in a fire escape passage

NASA Astrophysics Data System (ADS)

Casano, G.; Piva, S.

2017-11-01

Fire safety engineering requires a detailed understanding of fire behaviour and of its effects on structures and people. Many factors may condition the fire scenario, as for example, heat transfer between the flame and the boundary structures. Currently advanced numerical codes for the prediction of the fire behaviour are available. However, these solutions often require heavy calculations and long times. In this context analytical solutions can be useful for a fast analysis of simplified schematizations. After that, it is more effective the final utilization of the advanced fire codes. In this contribution, the temperature in a fire escape passage, separated with a thermally resistant wall from a fire room, is analysed. The escape space is included in a building where the neighbouring rooms are at a constant undisturbed temperature. The presence of the neighbouring rooms is considered with an equivalent heat transfer coefficient, in a boundary condition of the third type. An analytical solution is used to predict the temperature distribution during the fire. It allows to obtain useful information on the temperature reached in the escape area in contact with a burning room; it is useful also for a fast choice of the thermal characteristics of a firewall.

Large magnetoelectric coupling in magnetically short-range ordered Bi₅Ti₃FeO₁₅ film.

PubMed

Zhao, Hongyang; Kimura, Hideo; Cheng, Zhenxiang; Osada, Minoru; Wang, Jianli; Wang, Xiaolin; Dou, Shixue; Liu, Yan; Yu, Jianding; Matsumoto, Takao; Tohei, Tetsuya; Shibata, Naoya; Ikuhara, Yuichi

2014-06-11

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a robust room-temperature magneto-electric coupling in a bismuth-layer-structured ferroelectric Bi₅Ti₃FeO₁₅ with high ferroelectric Curie temperature of ~1000 K. Bi₅Ti₃FeO₁₅ thin films grown by pulsed laser deposition are single-phase layered perovskit with nearly (00l)-orientation. Room-temperature multiferroic behavior is demonstrated by a large modulation in magneto-polarization and magneto-dielectric responses. Local structural characterizations by transmission electron microscopy and Mössbauer spectroscopy reveal the existence of Fe-rich nanodomains, which cause a short-range magnetic ordering at ~620 K. In Bi₅Ti₃FeO₁₅ with a stable ferroelectric order, the spin canting of magnetic-ion-based nanodomains via the Dzyaloshinskii-Moriya interaction might yield a robust magneto-electric coupling of ~400 mV/Oe·cm even at room temperature.

Toward an Improved Hypersonic Engine Seal

NASA Technical Reports Server (NTRS)

Dunlap, Patrick H., Jr.; Steinetz, Bruce M.; DeMange,Jeffrey J.; Taylor, Shawn C.

2003-01-01

High temperature, dynamic seals are required in advanced engines to seal the perimeters of movable engine ramps for efficient, safe operation in high heat flux environments at temperatures from 2000 to 2500 F. Current seal designs do not meet the demanding requirements for future engines, so NASA s Glenn Research Center (GRC) is developing advanced seals to overcome these shortfalls. Two seal designs and two types of seal preloading devices were evaluated in a series of compression tests at room temperature and 2000 F and flow tests at room temperature. Both seals lost resiliency with repeated load cycling at room temperature and 2000 F, but seals with braided cores were significantly more flexible than those with cores composed of uniaxial ceramic fibers. Flow rates for the seals with cores of uniaxial fibers were lower than those for the seals with braided cores. Canted coil springs and silicon nitride compression springs showed promise conceptually as potential seal preloading devices to help maintain seal resiliency.

Transformer room fire tests

NASA Astrophysics Data System (ADS)

Fustich, C. D.

1980-03-01

A series of transformer room fire tests are reported to demonstate the shock hazard present when automatic sprinklers operate over energized electrical equipment. Fire protection was provided by standard 0.5 inch pendent automatic sprinklers temperature rated at 135 F and installed to give approximately 150 sq ft per head coverage. A 480 v dry transformer was used in the room to provide a three phase, four wire distribution system. It is shown that the induced currents in the test room during the various tests are relatively small and pose no appreciable personnel shock hazard.

Association between diurnal temperature range and respiratory tract infections.

PubMed

Ge, Wen Zhen; Xu, Feng; Zhao, Zhuo Hui; Zhao, Jin Zhuo; Kan, Hai Dong

2013-03-01

This study aimed to assess the association between emergency-room visits for respiratory tract infection (RTI) with diurnal temperature range (DTR), a weather parameter closely associated with urbanization and global climate change. We conducted a semiparametric time-series analysis to estimate the percentage increase in emergency-room visits for RTI associated with changes in DTR after adjustment for daily weather conditions (temperature and relative humidity) and outdoor air pollution. DTR was significantly associated with daily emergency-room visits for RTI. An increase of 1 °C in the current-day (L0) and in the 2-day moving average (L01) DTR corresponded to a 0.94% [95% confidence interval (CI), 0.34%-1.55%] and 2.08% (95% CI, 1.24%-2.93%) increase in emergency-room visits for RTI, respectively. DTR was associated with increased risk of RTI. More studies are needed to understand the impact of DTR on respiratory health. Copyright © 2013 The Editorial Board of Biomedical and Environmental Sciences. Published by China CDC. All rights reserved.

Temperature dependence of damage coefficient in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Faith, T. J.

1973-01-01

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Composite lead for conducting an electrical current between 75--80K and 4. 5K temperatures

DOEpatents

Negm, Y.; Zimmerman, G.O.; Powers, R.E. Jr.; McConeghy, R.J.; Kaplan, A.

1994-12-27

A composite lead is provided which electrically links and conducts a current between about 75-80K and liquid helium temperature of about 4.5K. The composite lead may be employed singly or in multiples concurrently to provide conduction of electrical current from normal conductors and semi-conductors at room temperature to superconductors operating at 4.5K. In addition, a variety of organizational arrangements and assemblies are provided by which the mechanical strength and electrical reliability of the composite lead is maintained. 12 figures.

Composite lead for conducting an electrical current between 75-80K and 4.5K temperatures

DOEpatents

Negm, Yehia; Zimmerman, George O.; Powers, Jr., Robert E.; McConeghy, Randy J.; Kaplan, Alvaro

1994-12-27

A composite lead is provided which electrically links and conducts a current between about 75-80K. and liquid helium temperature of about 4.5K. The composite lead may be employed singly or in multiples concurrently to provide conduction of electrical current from normal conductors and semi-conductors at room temperature to superconductors operating at 4.5K. In addition, a variety of organizationl arrangements and assemblies are provided by which the mechanical strength and electrical reliability of the composite lead is maintained.

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Thirty Years of Near Room Temperature Magnetic Cooling: Where we are Today and Future Prospects

DOE Office of Scientific and Technical Information (OSTI.GOV)

K.A. Gschneidner, Jr; V.K. Pecharsky'

2008-05-01

The seminal study by Brown in 1976 showed that it was possible to use the magnetocaloric effect to produce a substantial cooling effect near room temperature. About 15 years later Green et al. built a device which actually cooled a load other than the magnetocaloric material itself and the heat exchange fluid. The major breakthrough, however, occurred in 1997 when the Ames Laboratory/Astronautics proof-of-principle refrigerator showed that magnetic refrigeration was competitive with conventional gas compression cooling. Since then, over 25 magnetic cooling units have been built and tested throughout the world. The current status of near room temperature magnetic coolingmore » is reviewed, including a discussion of the major problems facing commercialization and potential solutions thereof. The future outlook for this revolutionary technology is discussed.« less

Watt-level widely tunable single-mode emission by injection-locking of a multimode Fabry-Perot quantum cascade laser

NASA Astrophysics Data System (ADS)

Chevalier, Paul; Piccardo, Marco; Anand, Sajant; Mejia, Enrique A.; Wang, Yongrui; Mansuripur, Tobias S.; Xie, Feng; Lascola, Kevin; Belyanin, Alexey; Capasso, Federico

2018-02-01

Free-running Fabry-Perot lasers normally operate in a single-mode regime until the pumping current is increased beyond the single-mode instability threshold, above which they evolve into a multimode state. As a result of this instability, the single-mode operation of these lasers is typically constrained to few percents of their output power range, this being an undesired limitation in spectroscopy applications. In order to expand the span of single-mode operation, we use an optical injection seed generated by an external-cavity single-mode laser source to force the Fabry-Perot quantum cascade laser into a single-mode state in the high current range, where it would otherwise operate in a multimode regime. Utilizing this approach, we achieve single-mode emission at room temperature with a tuning range of 36 cm-1 and stable continuous-wave output power exceeding 1 W at 4.5 μm. Far-field measurements show that a single transverse mode is emitted up to the highest optical power, indicating that the beam properties of the seeded Fabry-Perot laser remain unchanged as compared to free-running operation.

High performance, low dissipation quantum cascade lasers across the mid-IR range.

PubMed

Bismuto, Alfredo; Blaser, Stéphane; Terazzi, Romain; Gresch, Tobias; Muller, Antoine

2015-03-09

In this work, we present the development of low consumption quantum cascade lasers across the mid-IR range. In particular, short cavity single-mode lasers with optimised facet reflectivities have been fabricated from 4.5 to 9.2 μm. Threshold dissipated powers as low as 0.5 W were obtained in continuous wave operation at room temperature. In addition, the beneficial impact of reducing chip length on laser mounting yield is discussed. High power single-mode lasers from the same processed wafers are also presented.

Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohno, Takeo, E-mail: t-ohno@wpi-aimr.tohoku.ac.jp; Japan Science and Technology Agency; Samukawa, Seiji, E-mail: samukawa@ifs.tohoku.ac.jp

2015-04-27

Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

Normal-Mode Splitting in a Weakly Coupled Optomechanical System

NASA Astrophysics Data System (ADS)

Rossi, Massimiliano; Kralj, Nenad; Zippilli, Stefano; Natali, Riccardo; Borrielli, Antonio; Pandraud, Gregory; Serra, Enrico; Di Giuseppe, Giovanni; Vitali, David

2018-02-01

Normal-mode splitting is the most evident signature of strong coupling between two interacting subsystems. It occurs when two subsystems exchange energy between themselves faster than they dissipate it to the environment. Here we experimentally show that a weakly coupled optomechanical system at room temperature can manifest normal-mode splitting when the pump field fluctuations are antisquashed by a phase-sensitive feedback loop operating close to its instability threshold. Under these conditions the optical cavity exhibits an effectively reduced decay rate, so that the system is effectively promoted to the strong coupling regime.

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Radial tunnel diodes based on InP/InGaAs core-shell nanowires

NASA Astrophysics Data System (ADS)

Tizno, Ofogh; Ganjipour, Bahram; Heurlin, Magnus; Thelander, Claes; Borgström, Magnus T.; Samuelson, Lars

2017-03-01

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = -0.5 V are extracted at room temperature after normalization with the effective junction area.

The effect of the hypohydration on the lactate threshold in a hot and humid environment.

PubMed

Papadopoulos, C; Doyle, J; Rupp, J; Brandon, L; Benardot, D; Thompson, W

2008-09-01

The purpose of this study was to investigate the effect of hypohydration (HH) on the lactate threshold (LT) in a hot and humid environment. Ten apparently healthy males (age 25+/-3 yrs; height 1.8+/-0.04 m; mass 78+/-12 kg; VO2peak 3.7+/-0.4 L/min) underwent four randomly assigned maximal treadmill tests. Two trials were at room temperature (22+/-1 degrees C; RH = 50%) under two different hydration conditions: euhydrated (EH-RM) and hypohydrated (HH-RM), and two trials were performed in a warm chamber (37+/-0.5 degrees C; RH = 70%) under two different hydration conditions: euhydrated (EH-HT) and hypohydrated (HH-HT). The desired HH level (2-4%) was accomplished in the 24+ hours before testing by fluid restriction. Mean HH was 2.6+/-1.0% body weight. Capillary blood samples were collected at the end of each stage and analyzed for lactic acid (LA). LA concentrations were plotted for each exercise stage, and the LT was determined by visual inspection as the highest exercise stage at which blood LA concentration began to increase above each individual's resting levels. LT and body temperature were analyzed with a two-way repeated measures ANOVA (P < 0.05). During the trials in the warm chamber, the LT occurred at a significantly earlier stage compared to the thermoneutral environment (4.4+/-0.09 vs 5.8+/-0.10) and with a significantly lower oxygen consumption (2.38+/-0.09 L.min(-1) vs 2.86+/-0.13 L.min(-1)). Body temperature at the LT was significantly higher in the heat trials compared to room temperature (38.7+/-0.12 degrees C vs 37.6+/-0.14 degrees C). LT determination was not significantly altered by hydration. These results suggest that during progressive incremental maximal treadmill exercise, moderate HH does not affect the LT, whereas exercise in a hot and humid environment induces a downward shift in the LT. The elevated body temperature during the heat trials suggests that body temperature may affect running performance associated with the LT.

Study of thermal-field emission properties and investigation of temperature dependent noise in the field emission current from vertical carbon nanotube emitters

NASA Astrophysics Data System (ADS)

Kolekar, Sadhu; Patole, S. P.; Patil, Sumati; Yoo, J. B.; Dharmadhikari, C. V.

2017-10-01

We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well-defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD) in order to understand the effect of temperature on distribution of electron emission spots and ring like structures in Field Emission Microscope (FEM) image. The FEM images could be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 from FEM image is typically, 4.5 × 107 and the actual number emitters per cm2 present as per Atomic Force Microscopy (AFM) data is 1.2 × 1012. The measured Current-Voltage (I-V) characteristics exhibit non linear Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current were recorded at different temperatures and Fast Fourier transformed into temperature dependent power spectral density. The latter was found to obey power law relation S(f) = A(Iδ/fξ), where δ and ξ are temperature dependent current and frequency exponents respectively.

Room-Temperature Spin-Orbit Torque Switching Induced by a Topological Insulator

NASA Astrophysics Data System (ADS)

Han, Jiahao; Richardella, A.; Siddiqui, Saima A.; Finley, Joseph; Samarth, N.; Liu, Luqiao

2017-08-01

The strongly spin-momentum coupled electronic states in topological insulators (TI) have been extensively pursued to realize efficient magnetic switching. However, previous studies show a large discrepancy of the charge-spin conversion efficiency. Moreover, current-induced magnetic switching with TI can only be observed at cryogenic temperatures. We report spin-orbit torque switching in a TI-ferrimagnet heterostructure with perpendicular magnetic anisotropy at room temperature. The obtained effective spin Hall angle of TI is substantially larger than the previously studied heavy metals. Our results demonstrate robust charge-spin conversion in TI and provide a direct avenue towards applicable TI-based spintronic devices.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Kraitchman, M. D.

1985-01-01

The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

Assessment of the current D-dimer cutoff point in pulmonary embolism workup at a single institution: Retrospective study.

PubMed

Alhassan, S; Bihler, E; Patel, K; Lavudi, S; Young, M; Balaan, M

2018-06-06

The currently used D-dimer (DD) cutoff point is associated with a large number of negative CT-pulmonary angiographies (CTPA). We hypothesized presence of deficiency in the current cutoff and a need to look for a better DD threshold. We conducted a retrospective medical records analysis of all patients who had a CTPA as part of pulmonary embolism (PE) workup over a 1-year period. All emergency room (ER) patients who had DD assay checked prior to CTPA were included in the analysis. We assessed our institutional cutoff point and tried to test other presumptive DD thresholds retrospectively. At our institution 1591 CTPA were performed in 2014, with 1220 scans (77%) performed in the ER. DD test was ordered prior to CTPA imaging in 238 ER patients (19.5%) as part of the PE workup. PE was diagnosed in 14 cases (6%). The sensitivity and specificity of the currently used DD cutoff (0.5 mcg/mL) were found to be 100% and 13%, respectively. Shifting the cutoff value from 0.5 to 0.85 mcg/mL would result in a significant increase in the specificity from 13% to 51% while maintaining the same sensitivity of 100%. This would make theoretically 84 CTPA scans, corresponding to 35% of CTPA imaging, unnecessary because DD would be considered negative based on this presumptive threshold. Our results suggest a significant deficiency in the institutional DD cutoff point with the need to find a better threshold through a large multicenter prospective trial to minimize unnecessary CTPA scans and to improve patient safety.

Molecular beam epitaxy of single-crystalline aluminum film for low threshold ultraviolet plasmonic nanolasers

NASA Astrophysics Data System (ADS)

Liu, Shuanglong; Sheng, Bowen; Wang, Xinqiang; Dong, Dashan; Wang, Ping; Chen, Zhaoying; Wang, Tao; Rong, Xin; Li, Duo; Yang, Liuyun; Liu, Shangfeng; Li, Mo; Zhang, Jian; Ge, Weikun; Shi, Kebin; Tong, Yuzhen; Shen, Bo

2018-06-01

High-quality single-crystalline aluminum films have been grown on Si(111) substrates by molecular beam epitaxy. The x-ray diffraction rocking curve of the (111) plane of the Al film shows a full width at half maximum of 564 arc sec for the sample grown at 100 °C, where the surface is atomically flat with a root-mean-square roughness of 0.40 nm in a scanned area of 3 × 3 μm2. By using such a high-quality Al film, we have demonstrated a room temperature ultraviolet surface-plasmon-polariton nanolaser at a wavelength of 360 nm with a threshold as low as ˜0.2 MW/cm2, which provides a powerful evidence for potential application of the single-crystalline Al film in plasmonic devices.

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Role of the Excitability Brake Potassium Current IKD in Cold Allodynia Induced by Chronic Peripheral Nerve Injury.

PubMed

González, Alejandro; Ugarte, Gonzalo; Restrepo, Carlos; Herrera, Gaspar; Piña, Ricardo; Gómez-Sánchez, José Antonio; Pertusa, María; Orio, Patricio; Madrid, Rodolfo

2017-03-22

Cold allodynia is a common symptom of neuropathic and inflammatory pain following peripheral nerve injury. The mechanisms underlying this disabling sensory alteration are not entirely understood. In primary somatosensory neurons, cold sensitivity is mainly determined by a functional counterbalance between cold-activated TRPM8 channels and Shaker-like Kv1.1-1.2 channels underlying the excitability brake current I KD Here we studied the role of I KD in damage-triggered painful hypersensitivity to innocuous cold. We found that cold allodynia induced by chronic constriction injury (CCI) of the sciatic nerve in mice, was related to both an increase in the proportion of cold-sensitive neurons (CSNs) in DRGs contributing to the sciatic nerve, and a decrease in their cold temperature threshold. I KD density was reduced in high-threshold CSNs from CCI mice compared with sham animals, with no differences in cold-induced TRPM8-dependent current density. The electrophysiological properties and neurochemical profile of CSNs revealed an increase of nociceptive-like phenotype among neurons from CCI animals compared with sham mice. These results were validated using a mathematical model of CSNs, including I KD and TRPM8, showing that a reduction in I KD current density shifts the thermal threshold to higher temperatures and that the reduction of this current induces cold sensitivity in former cold-insensitive neurons expressing low levels of TRPM8-like current. Together, our results suggest that cold allodynia is largely due to a functional downregulation of I KD in both high-threshold CSNs and in a subpopulation of polymodal nociceptors expressing TRPM8, providing a general molecular and neural mechanism for this sensory alteration. SIGNIFICANCE STATEMENT This paper unveils the critical role of the brake potassium current I KD in damage-triggered cold allodynia. Using a well-known form of nerve injury and combining behavioral analysis, calcium imaging, patch clamping, and pharmacological tools, validated by mathematical modeling, we determined that the functional expression of I KD is reduced in sensory neurons in response to peripheral nerve damage. This downregulation not only enhances cold sensitivity of high-threshold cold thermoreceptors signaling cold discomfort, but it also transforms a subpopulation of polymodal nociceptors signaling pain into neurons activated by mild temperature drops. Our results suggest that cold allodynia is linked to a reduction of I KD in both high-threshold cold thermoreceptors and nociceptors expressing TRPM8, providing a general model for this form of cold-induced pain. Copyright © 2017 the authors 0270-6474/17/373109-18$15.00/0.

Mechanical Properties of the TiAl IRIS Alloy

NASA Astrophysics Data System (ADS)

Voisin, Thomas; Monchoux, Jean-Philippe; Thomas, Marc; Deshayes, Christophe; Couret, Alain

2016-12-01

This paper presents a study of the mechanical properties at room and high temperature of the boron and tungsten containing IRIS alloy (Ti-48Al-2W-0.08B at. pct). This alloy was densified by Spark Plasma Sintering (SPS). The resultant microstructure consists of small lamellar colonies surrounded by γ regions containing B2 precipitates. Tensile tests are performed from room temperature to 1273 K (1000 °C). Creep properties are determined at 973 K (700 °C)/300 MPa, 1023 K (750 °C)/120 MPa, and 1023 K (750 °C)/200 MPa. The tensile strength and the creep resistance at high temperature are found to be very high compared to the data reported in the current literature while a plastic elongation of 1.6 pct is preserved at room temperature. A grain size dependence of both ductility and strength is highlighted at room temperature. The deformation mechanisms are studied by post-mortem analyses on deformed samples and by in situ straining experiments, both performed in a transmission electron microscope. In particular, a low mobility of non-screw segments of dislocations at room temperature and the activation of a mixed-climb mechanism during creep have been identified. The mechanical properties of this IRIS alloy processed by SPS are compared to those of other TiAl alloys developed for high-temperature structural applications as well as to those of similar tungsten containing alloys obtained by more conventional processing techniques. Finally, the relationships between mechanical properties and microstructural features together with the elementary deformation mechanisms are discussed.

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org

AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

Evaluation of factors that affect analytic variability of urine protein-to-creatinine ratio determination in dogs.

PubMed

Rossi, Gabriele; Giori, Luca; Campagnola, Simona; Zatelli, Andrea; Zini, Eric; Paltrinieri, Saverio

2012-06-01

To determine whether preanalytic and analytic factors affect evaluation of the urinary protein-to-creatinine (UPC) ratio in dogs. 50 canine urine samples. The UPC ratio was measured to assess the intra-assay imprecision (20 measurements within a single session), the influence of predilution (1:10, 1:20, and 1:100) for urine creatinine concentration measurement, and the effect of storage at room temperature (approx 20°C), 4°C, and -20°C. The coefficient of variation at room temperature determined with the 1:20 predilution was < 10.0%, with the highest coefficients of variation found in samples with a low protein concentration or low urine specific gravity. This variability could result in misclassification of samples with UPC ratios close to the thresholds defined by the International Renal Interest Society to classify dogs as nonproteinuric (0.2), borderline proteinuric (0.21 to 0.50), or proteinuric (> 0.51). A proportional bias was found in samples prediluted 1:10, compared with samples prediluted 1:20 or 1:100. At room temperature, the UPC ratio did not significantly increase after 2 and 4 hours. After 12 hours at room temperature and at 4°C, the UPC ratio significantly increased. The UPC ratio did not significantly change during 3 months of storage at -20°C. The intra-assay precision of the UPC ratio was sufficiently low to avoid misclassification of samples, except for values close to 0.2 or 0.5. The optimal predilution ratio for urine creatinine concentration measurement was 1:20. A 1:100 predilution is recommended in samples with a urine specific gravity > 1.030. The UPC ratio must be measured as soon as samples are collected. Alternatively, samples should be immediately frozen to increase their stability and minimize the risk of misclassification of proteinuria.

5.5 W near-diffraction-limited power from resonant leaky-wave coupled phase-locked arrays of quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-02-09

Five, 8.36 μm-emitting quantum-cascade lasers (QCLs) have been monolithically phase-locked in the in-phase array mode via resonant leaky-wave coupling. The structure is fabricated by etch and regrowth which provides large index steps (Δn = 0.10) between antiguided-array elements and interelement regions. Such high index contrast photonic-crystal (PC) lasers have more than an order of magnitude higher index contrast than PC-distributed feedback lasers previously used for coherent beam combining in QCLs. Absorption loss to metal layers inserted in the interelement regions provides a wide (∼1.0 μm) range in interelement width over which the resonant in-phase mode is strongly favored to lase. Room-temperature, in-phase-mode operation withmore » ∼2.2 kA/cm{sup 2} threshold-current density is obtained from 105 μm-wide aperture devices. The far-field beam pattern has lobewidths 1.65× diffraction limit (D.L.) and 82% of the light in the main lobe, up to 1.8× threshold. Peak pulsed near-D.L. power of 5.5 W is obtained, with 4.5 W emitted in the main lobe. Means of how to increase the device internal efficiency are discussed.« less

Self-consistent optimization of [111]-AlGaInAs/InP MQWs structures lasing at 1.55 μm by a genetic algorithm

NASA Astrophysics Data System (ADS)

Saidi, Hosni; Msahli, Melek; Ben Dhafer, Rania; Ridene, Said

2017-12-01

Band structure and optical gain properties of [111]-oriented AlGaInAs/AlGaInAs-delta-InGaAs multi-quantum wells, subjected to piezoelectric field, for the near-infrared lasers diodes applications was proposed and investigated in this paper. By using genetic algorithm based on optimization technique we demonstrate that the structural parameters can be conveniently optimized to achieve high-efficiency laser diode performance at room temperature. In this work, significant optical gain for the wished emission wavelength at 1.55 μm and low threshold injection current are the optimization target. The end result of this optimization is a laser diode based on InP substrate using quaternary compound material of AlGaInAs in both quantum wells and barriers with different composition. It has been shown that the transverse electric polarized optical gain which reaches 3500 cm-1 may be acquired for λ = 1.55 μm with a threshold carrier density Nth≈1.31018cm-3, which is very promising to serve as an alternative active region for high-efficiency near-infrared lasers. Finally, from the design presented here, we show that it is possible to apply this technique to a different III-V compound semiconductors and wavelength ranging from deep-ultra-violet to far infrared.

Room acoustics for the aged.

PubMed

Plomp, R; Duquesnoy, A J

1980-12-01

This article deals with the combined effects of noise and reverberation on the speech-reception threshold for sentences. It is based on a series of current investigations on: (1) the modulation-transfer function as a measure of speech intelligibility in rooms, (2) the applicability of this concept to hearing-impaired persons, and (3) hearing loss for speech in quiet and in noise as a function of age. It is shown that, generally, in auditoria, classrooms, etc. the reverberation time T, acceptable for normal-hearing listeners, has to be reduced to (0.75)DT in order to be acceptable for elderly subjects with a hearing loss of D dB for speech in noise; for listening conditions as in lounges, restaurants, etc. the corresponding value is (0.82)DT.

Mobile Neel skyrmions at room temperature: Status and future

DOE PAGES

Jiang, Wanjun; Zhang, Wei; Yu, Guoqiang; ...

2016-03-07

Magnetic skyrmions are topologically protected spin textures that exhibit many fascinating features. As compared to the well-studied cryogenic Bloch skyrmions in bulk materials, we focus on the room- temperature Néel skyrmions in thin-film systems with an interfacial broken inversion symmetry in this article. Specifically, we show the stabilization, the creation, and the implementation of Néel skyrmions that are enabled by the electrical current-induced spin-orbit torques. As a result, towards the nanoscale Néel skyrmions, we further discuss the challenges from both material optimization and imaging characterization perspectives.

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

Experimental and theoretical studies of Sub-THz detection using strained-Si FETs

NASA Astrophysics Data System (ADS)

Delgado Notario, J. A.; Javadi, E.; Clericò, V.; Fobelets, K.; Otsuji, T.; Diez, E.; Velázquez-Pérez, J. E.; Meziani, Y. M.

2017-10-01

We report on experimental and theoretical studies of nanoscale gate-lengths strained Silicon MODFETs as room temperature non resonant detectors. Devices were excited at room temperature by an electronic source at 150 and 300 GHz to characterize their sub-THz response. The maximum of the photovoltaic response was obtained when the FET gate was biased at a value close to the threshold voltage. Simulations based on a bi-dimensional hydrodynamic model for the charge transport coupled to a Poisson equation solver were performed by using Synopsys TCAD. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic response. Results from numerical simulations are in agreement with experimental ones. To understand the coupling between terahertz radiation and devices, the devices were rotated at different angles under excitation at both sub-terahertz frequencies and their response measured. Both NEP (Noise Equivalent Power) and Responsivity were calculated from measurements. To demonstrate their utility, devices were used as sensors in a terahertz imaging system for inspection of hidden objects at both frequencies.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers.

PubMed

Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua

2015-07-08

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

PubMed

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

High-Temperature Annealing of CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, J.; Hwang, S.; Yu, H.

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

High-Temperature Annealing of CdZnTe Detectors

DOE PAGES

Suh, J.; Hwang, S.; Yu, H.; ...

2017-11-10

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

Using a Photon Beam for Thermal Nociceptive Threshold Experiments

NASA Astrophysics Data System (ADS)

Walker, Azida; Anderson, Jeffery; Sherwood, Spencer

In humans, risk of diabetes and diabetic complications increases with age and duration of prediabetic state. In an effort to understand the progression of this disease scientists have evaluated the deterioration of the nervous system. One of the current methods used in the evaluation of the deterioration of the nervous system is through thermal threshold experiments. An incremental Hot / Cold Plate Analgesia Meter (IITC Life Science,CA is used to linearly increase the plate temperature at a rate of 10 ºC min-1 with a cutoff temperature of 55 ºC. Hind limb heat pain threshold (HPT) will be defined as a plate temperature at which the animal abruptly withdraws either one of its hind feet from the plate surface in a sharp move, typically followed by licking of the lifted paw. One of the disadvantages of using this hot plate method is in determining the true temperature at which the paw was withdrawn. While the temperature of the plate is known the position of the paw on the surface may vary; occasionally being cupped resulting in a temperature differentiation between the plate and the paw. During experiments the rats may urine onto the plate changing the temperature of the surface again resulting in reduced accuracy as to the withdrawal threshold. We propose here a new method for nociceptive somatic experiments involving the heat pain threshold experiments. This design employs the use of a photon beam to detect thermal response from an animal model. The details of this design is presented. Funded by the Undergraduate Research Council at the University of Central Arkansas.

Origin and enhancement of spin polarized current in diluted magnetic oxides by oxygen vacancies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, Hsiung, E-mail: hchou@mail.nsysu.edu.tw; Yang, Kung-Shang; Tsao, Yao-Chung

Spin polarized current (SPC) is a crucial characteristic of diluted magnetic oxides due to the potential application of oxides in spintronic devices. However, most research has been focused on ferromagnetic properties rather than polarization of electric current, because direct measurements are difficult and the origin of SPC has yet to be fully understood. The method to increase the SPC percentage is beyond practical consideration at present. To address this problem, we focus on the role of oxygen vacancies (V{sub O}) on SPC, which are controlled by growing the Co-doped ZnO thin-films at room temperature in a reducing atmosphere [Ar + (1%–30%)H{sub 2}].more » We found that the conductivity increases with an increase of V{sub O} via two independent channels: the variable range hopping (VRH) within localized states and the itinerant transport in the conduction band. The point contact Andreev reflection measurements at 4.2 K, where the electric conduction is governed only by the VRH mechanism, prove that the current flowing in the VRH hopping channel is SPC. The percentage of SPC increases with the introduction of V{sub O} and increase in its concentration. The transport measurement shows that by manipulating V{sub O}, one can control the percentage of VRH hopping conduction such that it can even dominate room temperature conduction. The highest achieved SPC ratio at room temperature was 80%.« less

Current status of Japanese detectors

NASA Astrophysics Data System (ADS)

Tatsumi, Daisuke; Takahashi, Ryutaro; Arai, Koji; Nakagawa, Noriyasu; Agatsuma, Kazuhiro; Yamazaki, Toshitaka; Fukushima, Mitsuhiro; Fujimoto, Masa-Katsu; Takamori, Akiteru; Bertolini, Alessandro; Sannibale, Virginio; DeSalvo, Riccardo; Márka, Szabolcs; Ando, Masaki; Tsubono, Kimio; Akutsu, Tomomi; Yamamoto, Kazuhiro; Ishitsuka, Hideki; Uchiyama, Takashi; Miyoki, Shinji; Ohashi, Masatake; Kuroda, Kazuaki; Awaya, Norichika; Kanda, Nobuyuki; Araya, Akito; Telada, Souichi; Tomaru, Takayuki; Haruyama, Tomiyoshi; Yamamoto, Akira; Sato, Nobuaki; Suzuki, Toshitaka; Shintomi, Takakazu

2007-10-01

The current status of the TAMA and CLIO detectors in Japan is reported in this paper. These two interferometric gravitational wave detectors are being developed for the large cryogenic gravitational wave telescope (LCGT) which is a future plan for detecting gravitational wave signals at least once per year. TAMA300 is being upgraded to improve the sensitivity in a low-frequency region after the last observational experiment in 2004. To reduce the seismic noises, we are installing a new seismic isolation system, called the TAMA seismic attenuation system, for the four test masses. We confirmed stable mass locks of a cavity and improvements of length and angular fluctuations by using two SASs. We are currently optimizing the performance of the third and fourth SASs. We continue TAMA300 operation and R&D studies for the LCGT. The next data taking is planned for the summer of 2007. CLIO is a 100 m baseline length prototype detector for LCGT to investigate interferometer performance in cryogenic condition. The key features of CLIO are that it locates the Kamioka underground site for a low-seismic noise level, and adopts cryogenic Sapphire mirrors for low-thermal noise level. The first operation of the cryogenic interferometer was successfully demonstrated in February 2006. Current sensitivity at room temperature is close to the target sensitivity within a factor of 4. Several observational experiments at room temperature have been done. Once the displacement noise reaches the thermal noise level of room temperature, its improvement by cooling test mass mirrors should be demonstrated.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Complex hydrides as room-temperature solid electrolytes for rechargeable batteries

NASA Astrophysics Data System (ADS)

de Jongh, P. E.; Blanchard, D.; Matsuo, M.; Udovic, T. J.; Orimo, S.

2016-03-01

A central goal in current battery research is to increase the safety and energy density of Li-ion batteries. Electrolytes nowadays typically consist of lithium salts dissolved in organic solvents. Solid electrolytes could facilitate safer batteries with higher capacities, as they are compatible with Li-metal anodes, prevent Li dendrite formation, and eliminate risks associated with flammable organic solvents. Less than 10 years ago, LiBH4 was proposed as a solid-state electrolyte. It showed a high ionic conductivity, but only at elevated temperatures. Since then a range of other complex metal hydrides has been reported to show similar characteristics. Strategies have been developed to extend the high ionic conductivity of LiBH4 down to room temperature by partial anion substitution or nanoconfinement. The present paper reviews the recent developments in complex metal hydrides as solid electrolytes, discussing in detail LiBH4, strategies towards for fast room-temperature ionic conductors, alternative compounds, and first explorations of implementation of these electrolytes in all-solid-state batteries.

Xenon Recovery at Room Temperature using Metal-Organic Frameworks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elsaidi, Sameh K.; Ongari, Daniele; Xu, Wenqian

2017-07-24

Xenon is known to be a very efficient anesthetic gas but its cost prohibits the wider use in medical industry and other potential applications. It has been shown that Xe recovery and recycle from anesthetic gas mixture can significantly reduce its cost as anesthetic. The current technology uses series of adsorbent columns followed by low temperature distillation to recover Xe, which is expensive to use in medical facilities. Herein, we propose much efficient and simpler system to recover and recycle Xe from simulant exhale anesthetic gas mixture at room temperature using metal organic frameworks. Among the MOFs tested, PCN-12 exhibitsmore » unprecedented performance with high Xe capacity, Xe/O2, Xe/N2 and Xe/CO2 selectivity at room temperature. The in-situ synchrotron measurements suggest the Xe is occupied in the small pockets of PCN-12 compared to unsaturated metal centers (UMCs). Computational modeling of adsorption further supports our experimental observation of Xe binding sites in PCN-12.« less

Xenon Recovery at Room Temperature using Metal-Organic Frameworks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elsaidi, Sameh K.; Ongari, Daniele; Xu, Wenqian

2017-07-24

Xenon is known to be a very efficient anesthetic gas but its cost prohibits the wider use in medical industry and other potential applications. It has been shown that Xe recovery and recycle from anesthetic gas mixture can significantly reduce its cost as anesthetic. The current technology uses series of adsorbent columns followed by low temperature distillation to recover Xe, which is expensive to use in medical facilities. Herein, we propose much efficient and simpler system to recover and recycle Xe from simulant exhale anesthetic gas mixture at room temperature using metal organic frameworks. Among the MOFs tested, PCN-12 exhibitsmore » unprecedented performance with high Xe capacity, Xe/N2 and Xe/O2 selectivity at room temperature. The in-situ synchrotron measurements suggest the Xe is occupied in the small pockets of PCN-12 compared to unsaturated metal centers (UMCs). Computational modeling of adsorption further supports our experimental observation of Xe binding sites in PCN-12.« less

Immense Magnetic Response of Exciplex Light Emission due to Correlated Spin-Charge Dynamics

NASA Astrophysics Data System (ADS)

Wang, Yifei; Sahin-Tiras, Kevser; Harmon, Nicholas J.; Wohlgenannt, Markus; Flatté, Michael E.

2016-01-01

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFEs) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFEs if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in coevaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here, we show that exciplex recombination in blends exhibiting thermally activated delayed fluorescence produces MFEs in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device's current-voltage response curve by device conditioning. Both of these immense MFEs are the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFEs in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFEs in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. Magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the thermally activated delayed fluorescence process.

Immense Magnetic Response of Exciplex Light Emission due to Correlated Spin-Charge Dynamics

DOE PAGES

Wang, Yifei; Sahin-Tiras, Kevser; Harmon, Nicholas J.; ...

2016-02-05

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFEs) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFEs if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in coevaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here, we show that exciplex recombination in blendsmore » exhibiting thermally activated delayed fluorescence produces MFEs in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device’s current-voltage response curve by device conditioning. Both of these immense MFEs are the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFEs in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFEs in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. In conclusion, magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the thermally activated delayed fluorescence process.« less

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

NASA Astrophysics Data System (ADS)

Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

2017-07-01

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

Cascaded Emission Regions in 2.4 μm GaInAsSb Light Emitting Diode's for Improved Current Efficiency

NASA Astrophysics Data System (ADS)

Prineas, John; Yager, Jeff; Olesberg, Jonathon; Cao, Chuanshun; Reddy, Madhu; Coretsopoulos, Chris

2008-03-01

Infrared optoelectronics play an important role in sensing of molecules through characteristic vibrational resonances that occur at those wavelengths. For molecules in aqueous and at room temperature, where optical transistions tend to be broad, the broadband emission of light emitting diodes (LEDs) are well suited for obtaining molecular absorption spectra. The 2-2.6 μm range is an advantageous range for sensing of glucose. Voltages available in batteries and control electronics are limited to much higher voltages than those required to turn on an infrared LED, and moreover have limited current supply. Here, we demonstrate room temperature operature of 5-stage cascaded emission regions in 2-2.6 μm GaInAsSb LEDs. We report three times higher turn on voltage, and nine times improved current efficiency compared to a single stage device.

The heat is on: room temperature affects laboratory equipment--an observational study.

PubMed

Butler, Julia M; Johnson, Jane E; Boone, William R

2013-10-01

To evaluate the effect of ambient room temperature on equipment typically used in in vitro fertilization (IVF). We set the control temperature of the room to 20 °C (+/-0.3) and used CIMScan probes to record temperatures of the following equipment: six microscope heating stages, four incubators, five slide warmers and three heating blocks. We then increased the room temperature to 26 °C (+/-0.3) or decreased it to 17 °C (+/-0.3) and monitored the same equipment again. We wanted to determine what role, if any, changing room temperature has on equipment temperature fluctuation. There was a direct relationship between room temperature and equipment temperature stability. When room temperature increased or decreased, equipment temperature reacted in a corresponding manner. Statistical differences between equipment were found when the room temperature changed. What is also noteworthy is that temperature of equipment responded within 5 min to a change in room temperature. Clearly, it is necessary to be aware of the affect of room temperature on equipment when performing assisted reproductive procedures. Room and equipment temperatures should be monitored faithfully and adjusted as frequently as needed, so that consistent culture conditions can be maintained. If more stringent temperature control can be achieved, human assisted reproduction success rates may improve.

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

PubMed Central

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-01-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm−2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm−2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion). PMID:26411701

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

NASA Astrophysics Data System (ADS)

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-09-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm-2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm-2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion).

Physiological responses to acute cold exposure in young lean men

PubMed Central

Martinez-Tellez, Borja; Sanchez-Delgado, Guillermo; A. Alcantara, Juan M.; Acosta-Manzano, Pedro; Morales-Artacho, Antonio J.; R. Ruiz, Jonatan

2018-01-01

The aim of this study was to comprehensively describe the physiological responses to an acute bout of mild cold in young lean men (n = 11, age: 23 ± 2 years, body mass index: 23.1 ± 1.2 kg/m2) to better understand the underlying mechanisms of non-shivering thermogenesis and how it is regulated. Resting energy expenditure, substrate metabolism, skin temperature, thermal comfort perception, superficial muscle activity, hemodynamics of the forearm and abdominal regions, and heart rate variability were measured under warm conditions (22.7 ± 0.2°C) and during an individualized cooling protocol (air-conditioning and water cooling vest) in a cold room (19.4 ± 0.1°C). The temperature of the cooling vest started at 16.6°C and decreased ~ 1.4°C every 10 minutes until participants shivered (93.5 ± 26.3 min). All measurements were analysed across 4 periods: warm period, at 31% and at 64% of individual´s cold exposure time until shivering occurred, and at the shivering threshold. Energy expenditure increased from warm period to 31% of cold exposure by 16.7% (P = 0.078) and to the shivering threshold by 31.7% (P = 0.023). Fat oxidation increased by 72.6% from warm period to 31% of cold exposure (P = 0.004), whereas no changes occurred in carbohydrates oxidation. As shivering came closer, the skin temperature and thermal comfort perception decreased (all P<0.05), except in the supraclavicular skin temperature, which did not change (P>0.05). Furthermore, the superficial muscle activation increased at the shivering threshold. It is noteworthy that the largest physiological changes occurred during the first 30 minutes of cold exposure, when the participants felt less discomfort. PMID:29734360

Effects of environmental temperature on oviposition behavior in three blow fly species of forensic importance.

PubMed

Ody, Helen; Bulling, Mark T; Barnes, Kate M

2017-06-01

A number of factors are known to affect blow fly behavior with respect to oviposition. Current research indicates that temperature is the most significant factor. However temperature thresholds for oviposition in forensically important blow flies have not been well studied. Here, the oviposition behavior of three species of forensically important blow fly species (Calliphora vicina, Calliphora vomitoria and Lucilia sericata,) was studied under controlled laboratory conditions over a range of temperatures (10-40°C). Lower temperature thresholds for oviposition of 16°C and 17.5°C were established for C. vomitoria and L. sericata respectively, whilst C. vicina continued to lay eggs at 10°C. C. vomitoria and L. sericata both continued to lay eggs at 40°C, whilst the highest temperature at which oviposition occurred in C. vicina was 35°C. Within these thresholds there was considerable variation in the number of surviving pupae, with a general pattern of a single peak within the range of temperatures at which eggs were laid, but with the pattern being much less distinct for L. sericata. Copyright © 2017 Elsevier B.V. All rights reserved.

Temperature and voltage stress dependent dielectric relaxation process of the doped Ba0.67Sr0.33TiO3 ceramics

NASA Astrophysics Data System (ADS)

Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin

2013-09-01

The current decay characteristic in the time domain is studied in Y3+ and Mn2+ modified Ba0.67Sr0.33TiO3 ceramics under different temperatures (25 °C-213 °C) and voltage stresses (0 V-800 V). The decay of the current is correlated with the overlapping of the relaxation process and leakage current. With respect to the inherent remarkable dielectric nonlinearity, a simple method through curve fitting is derived to differentiate these two currents. Two mechanisms of the relaxation process are proposed: a distribution of the potential barriers mode around room temperature and an electron injection mode at the elevated temperature of 110 °C.

Current laboratory requirements for adrenocorticotropic hormone and renin/aldosterone sample handling are unnecessarily restrictive.

PubMed

Chakera, Ali J; McDonald, Timothy J; Knight, Bridget A; Vaidya, Bijay; Jones, Angus G

2017-02-01

Samples for adrenocorticotropic hormone (ACTH) and aldosterone/renin analysis usually require rapid transport to the receiving laboratory for immediate separation and freezing. In practice, this means assessment is limited to hospital settings and many samples are rejected. We examined whether these requirements are necessary by assessing the stability of ACTH, aldosterone and renin over 48 hours in whole blood collected in serum gel and EDTA plasma from 31 participants. Our results show that ACTH collected into EDTA plasma is stable at room temperature for at least 6 hours, mean change at 6 hours -2.6% (95% CI -9.7 to 4.5). Both aldosterone and renin were stable collected on serum gel at room temperature for at least 6 hours: mean change aldosterone +0.2% (95% CI -3.6 to 4.0), renin -1.9% (95% CI -7.0 to3.2). Therefore, by using appropriate preservatives, ACTH and aldosterone/renin can be measured on samples collected at room temperature and processed within 6 hours. This would facilitate outpatient and emergency room assessment of these analytes. © Royal College of Physicians 2017. All rights reserved.

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

PubMed Central

Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

2016-01-01

Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L) and injection current density (J) with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures. PMID:28773923

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

PubMed

Lin, Guangyang; Chen, Ningli; Zhang, Lu; Huang, Zhiwei; Huang, Wei; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng

2016-09-27

Direct band electroluminescence (EL) from tensile-strained Si 0.13 Ge 0.87 /Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300-1400 nm and 1600-1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL ( L ) and injection current density ( J ) with L ~ J m shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH) valance band at higher temperatures.

Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

NASA Astrophysics Data System (ADS)

Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

2015-11-01

In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

Influence of Deposition Temperature on Optical and Laser-Induced Damage Properties of LaTiO3 Films

NASA Astrophysics Data System (ADS)

Su, Junhong; Xu, Junqi; Yang, Chen; Cheng, Yaojin

2015-08-01

LaTiO3 films were prepared at room temperature, 60, 140 and 220°C using a thermal vapor deposition technique with an electronic beam gun to investigate the relationship between deposition temperatures and the optical properties of the samples. In the ellipsometric analysis, the corresponding refractive indexes were 1.8993, 1.9123, 1.9197 and 1.9283 at a wavelength of 1064 nm. At the same time, extremely low absorption characteristics of all the samples presented in the visible and IR regions. With the same high-energy testing laser of 200 mJ (about 40 J/cm2) at a wavelength of 1064 nm and a pulse width of 10 ns, the laser-induced damage threshold (LIDT) of the LaTiO3 samples prepared at different temperatures were 15.5, 16.7, 18.5 and 18.2 J/cm2, respectively. This shows that a higher LIDT may be obtained at higher deposition temperatures.

Change in the magnetic properties of nanoferrihydrite with an increase in the volume of nanoparticles during low-temperature annealing

NASA Astrophysics Data System (ADS)

Balaev, D. A.; Krasikov, A. A.; Stolyar, S. V.; Iskhakov, R. S.; Ladygina, V. P.; Yaroslavtsev, R. N.; Bayukov, O. A.; Vorotynov, A. M.; Volochaev, M. N.; Dubrovskiy, A. A.

2016-09-01

The results of the investigation into the effect of low-temperature annealing of a powder of nanoparticles of bacterial ferrihydrite on its magnetic properties have been presented. It has been found that an increase in the time (up to 240 h) and temperature (in the range from 150 to 200°C) of annealing leads to a monotonic increase in the superparamagnetic blocking temperature, the coercive force, and the threshold field of the opening of the magnetic hysteresis loop (at liquid-helium temperatures), as well as to an increase in the magnetic resonance line width at low temperatures and in the magnetic susceptibility at room temperature. At the same time, according to the results of the analysis of the Mössbauer spectra, the annealing of ferrihydrite does not lead to the formation of new iron oxide phases. Most of these features are well consistent with the fact that the low-temperature annealing of ferrihydrite causes an increase in the size of nanoparticles, which is confirmed by the results of transmission electron microscopy studies.

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

PubMed

Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

2015-07-28

Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials.

Temperature-insensitive long-wavelength (λ ≈14 µm) Quantum Cascade lasers with low threshold.

PubMed

Huang, Xue; Charles, William O; Gmachl, Claire

2011-04-25

We demonstrate high-performance, long-wavelength (λ ≈14 µm) Quantum Cascade (QC) lasers based on a diagonal optical transition and a "two-phonon-continuum" depletion scheme in which the lower laser level is depopulated by resonant longitudinal optical phonon scattering followed by scattering to a lower energy level continuum. A 2.8 mm long QC laser shows a low threshold current density of 2.0 kA/cm2, a peak output power of ~336 mW, and a slope efficiency of 375 mW/A, all at 300 K, with a high characteristic temperature T0 ~310 K over a wide temperature range from 240 K to 390 K.

Unusual scaling laws for plasmonic nanolasers beyond the diffraction limit.

PubMed

Wang, Suo; Wang, Xing-Yuan; Li, Bo; Chen, Hua-Zhou; Wang, Yi-Lun; Dai, Lun; Oulton, Rupert F; Ma, Ren-Min

2017-12-01

Plasmonic nanolasers are a new class of amplifiers that generate coherent light well below the diffraction barrier bringing fundamentally new capabilities to biochemical sensing, super-resolution imaging, and on-chip optical communication. However, a debate about whether metals can enhance the performance of lasers has persisted due to the unavoidable fact that metallic absorption intrinsically scales with field confinement. Here, we report plasmonic nanolasers with extremely low thresholds on the order of 10 kW cm -2 at room temperature, which are comparable to those found in modern laser diodes. More importantly, we find unusual scaling laws allowing plasmonic lasers to be more compact and faster with lower threshold and power consumption than photonic lasers when the cavity size approaches or surpasses the diffraction limit. This clarifies the long-standing debate over the viability of metal confinement and feedback strategies in laser technology and identifies situations where plasmonic lasers can have clear practical advantage.

Laser diodes with 353 nm wavelength enabled by reduced-dislocation-density AlGaN templates

DOE PAGES

Crawford, Mary H.; Allerman, Andrew A.; Armstrong, Andrew M.; ...

2015-10-30

We fabricated optically pumped and electrically injected ultraviolet (UV) lasers on reduced-threading-dislocation-density (reduced-TDD) AlGaN templates. The overgrowth of sub-micron-wide mesas in the Al 0.32Ga 0.68N templates enabled a tenfold reduction in TDD, to (2–3) × 10 8 cm –2. Optical pumping of AlGaN hetero-structures grown on the reduced-TDD templates yielded a low lasing threshold of 34 kW/cm 2 at 346 nm. Room-temperature pulsed operation of laser diodes at 353 nm was demonstrated, with a threshold of 22.5 kA/cm 2. Furthermore, reduced-TDD templates have been developed across the entire range of AlGaN compositions, presenting a promising approach for extending laser diodesmore » into the deep UV.« less

Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power

NASA Astrophysics Data System (ADS)

Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Jiang, Bin; Zhang, Jianxin; Qi, Aiyi; Liu, Lei; Fu, Feiya; Zheng, Wanhua

2012-03-01

The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass production with low cost of electrically driven PCSELs.

On the origin of the low-temperature band in depolarization current spectra of poled multicomponent silicate glasses

NASA Astrophysics Data System (ADS)

Brunkov, P. N.; Kaasik, V. P.; Lipovskii, A. A.; Tagantsev, D. K.

2018-04-01

Thermally stimulated depolarization current spectra of poled silicate multicomponent glasses in the vicinity of room temperature (220-320 K) have been recorded and two bands, typical for such glasses, have been observed. It was shown that the high-temperature band (at about 290 K) is related to the relaxation of poled glass structure in the bulk, while the low-temperature band (at about 230-270 K) should be attributed to the surface phenomenon—absorption/desorption of positive species of ambient atmosphere, supposedly, water cluster ions H+(H2O)n.

Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiwari, Rajanish N., E-mail: rajanisht@gmail.com; Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511; Yoshimura, Masamichi

2016-06-15

We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

NASA Astrophysics Data System (ADS)

Wu, D. H.; Zhang, Y. Y.; Razeghi, M.

2018-03-01

We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 × 109 cm Hz1/2/W at 3.81 μm.

Effect of magnetic field on the electrodeposition of nickel

NASA Astrophysics Data System (ADS)

Subhachandhar, S.; Krishnan, A. Yaadhav; Sivabalan, S.; Narayanan, R.

2012-07-01

This paper investigates the effect of an external magnetic field in the electroplating of Ni, one of the four ferromagnetic materials at the room temperature. Nickel plating is done using Watts bath with a composition of 250g/L of Nickel sulphate, 35g/L of Nickel Chloride, 25g/L of Boric acid with pH between 5 and 6 at room temperature under a current density of 0.05-0.1 A/dm2 under the presence of an external magnetic field to obtain a coherent coating. The arrangement of the coated particles is studied by SEM analysis.

Ligand-Free Pd-Catalyzed Double Carbonylation of Aryl Iodides with Amines to α-Ketoamides under Atmospheric Pressure of Carbon Monoxide and at Room Temperature.

PubMed

Du, Hongyan; Ruan, Qing; Qi, Minghao; Han, Wei

2015-08-07

A general Pd-catalyzed double carbonylation of aryl iodides with secondary or primary amines to produce α-ketoamides at atmospheric CO pressure has been developed. This transformation proceeds successfully even at room temperature and in the absence of any ligand and additive. A wide range of aryl iodides and amines can be coupled to the desired α-ketoamides in high yields with excellent chemoselectivities. Importantly, the current methodology has been demonstrated to be applied in the synthesis of bioactive molecules and chiral α-ketoamides.

Gas Sensitivity Study of Polypyrrole Decorated Graphene Oxide Thick Film

NASA Astrophysics Data System (ADS)

Patil, Pritam; Gaikwad, Ganesh; Patil, Devidas Ramrao; Naik, Jitendra

2016-04-01

Polypyrrole (PPy) and graphene oxide (GO) nanocomposites were prepared by in situ polymerization method. The synthesized nanocomposites were characterized for current-voltage characteristic, Fourier transform infrared spectroscopy, X-ray diffraction and field emission scanning electron microscopy, which gave the evidence of the strong interaction between PPy nanofibers and GO nanosheets. The PPy/GO nanocomposites were used for the sensing of H2S, LPG, CO2 and NH3 gases respectively at room temperature. It was observed that PPy/GO nanocomposites with different GO weight ratios (5, 10 and 20 %) had better selectivity and sensitivity towards NH3 at room temperature.

A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature.

PubMed

Liu, Guanxiong; Debnath, Bishwajit; Pope, Timothy R; Salguero, Tina T; Lake, Roger K; Balandin, Alexander A

2016-10-01

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, including 1T-TaSe 2 , 1T-TaS 2 and 1T-TiSe 2 exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by the environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here, we demonstrate room-temperature current switching driven by a voltage-controlled phase transition between CDW states in films of 1T-TaS 2 less than 10 nm thick. We exploit the transition between the nearly commensurate and the incommensurate CDW phases, which has a transition temperature of 350 K and gives an abrupt change in current accompanied by hysteresis. An integrated graphene transistor provides a voltage-tunable, matched, low-resistance load enabling precise voltage control of the circuit. The 1T-TaS 2 film is capped with hexagonal boron nitride to provide protection from oxidation. The integration of these three disparate 2D materials in a way that exploits the unique properties of each yields a simple, miniaturized, voltage-controlled oscillator suitable for a variety of practical applications.

Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent

NASA Astrophysics Data System (ADS)

Alahmadi, Yousef; LiKam Wa, Patrick

2018-02-01

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Transverse junction vertical-cavity surface-emitting laser

NASA Astrophysics Data System (ADS)

Schaus, C. F.; Torres, A. J.; Cheng, Julian; Sun, S.; Hains, C.

1991-04-01

An all-epitaxial, transverse-junction GaAs/AlGaAs vertical-cavity surface-emitting laser (TJ-VCSEL) incorporating wavelength-resonant periodic gain is reported. Metalorganic chemical vapor deposition is used for epitaxial growth of a structure containing five GaAs quantum wells. The simple p(+)-p-n(+) transverse junction is fabricated using reactive ion etching and diffusion techniques. Contacts are situated on the wafer surface resulting in a nearly planar structure. The device exhibits a room-temperature threshold of 48 mA (pulsed) and a resolution-limited spectral width of 0.11 nm at an 855.8-nm lasing wavelength.

Charge dissipative dielectric for cryogenic devices

NASA Technical Reports Server (NTRS)

Cantor, Robin Harold (Inventor); Hall, John Addison (Inventor)

2007-01-01

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Colossal Terahertz Magnetoresistance at Room Temperature in Epitaxial La0.7Sr0.3MnO3 Nanocomposites and Single-Phase Thin Films.

PubMed

Lloyd-Hughes, J; Mosley, C D W; Jones, S P P; Lees, M R; Chen, A; Jia, Q X; Choi, E-M; MacManus-Driscoll, J L

2017-04-12

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7 Sr 0.3 MnO 3 . At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: the mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. The VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.

Colossal terahertz magnetoresistance at room temperature in epitaxial La 0.7Sr 0.3MnO 3 nanocomposites and single-phase thin films

DOE PAGES

Lloyd-Hughes, James; Mosley, C. D. W.; Jones, S. P. P.; ...

2017-03-13

Colossal magnetoresistance (CMR) is demonstrated at terahertz (THz) frequencies by using terahertz time-domain magnetospectroscopy to examine vertically aligned nanocomposites (VANs) and planar thin films of La 0.7Sr 0.3MnO 3. At the Curie temperature (room temperature), the THz conductivity of the VAN was dramatically enhanced by over 2 orders of magnitude under the application of a magnetic field with a non-Drude THz conductivity that increased with frequency. The direct current (dc) CMR of the VAN is controlled by extrinsic magnetotransport mechanisms such as spin-polarized tunneling between nanograins. In contrast, we find that THz CMR is dominated by intrinsic, intragrain transport: themore » mean free path was smaller than the nanocolumn size, and the planar thin-film exhibited similar THz CMR to the VAN. Surprisingly, the observed colossal THz magnetoresistance suggests that the magnetoresistance can be large for alternating current motion on nanometer length scales, even when the magnetoresistance is negligible on the macroscopic length scales probed by dc transport. This suggests that colossal magnetoresistance at THz frequencies may find use in nanoelectronics and in THz optical components controlled by magnetic fields. As a result, the VAN can be scaled in thickness while retaining a high structural quality and offers a larger THz CMR at room temperature than the planar film.« less

Analysis of electrical properties of heterojunction based on ZnIn2Se4

NASA Astrophysics Data System (ADS)

Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.; Al-Harbi, F. F.

2017-04-01

Heterojunction of n-ZnIn2Se4/p-Si was fabricated using thermal evaporation of ZnIn2Se4 thin films of thickness 473 nm onto p-Si substrate at room temperature. The characteristics of current-voltage (I-V) for n-ZnIn2Se4/p-Si heterojunction were investigated at different temperatures ranged from 308 K to 363 K. The junction parameters namely are; rectification ratio (RR), series resistance (Rs), shunt resistance (Rsh) and diode ideality factor (n) were calculated from the analysis of I-V curves. The forward current showed two conduction mechanisms operating, which were the thermionic emission and the single trap space charge limited current in low (0 ≤ V ≤ 0.5 V) and high (V ≥ 0.7 V) ranges of voltage, respectively. The reverse current was due to the generation through Si rather than the ZnIn2Se4 film. The built-in voltage and the width of the depletion region were determined from the capacitance-voltage (C-V) measurements. The photovoltaic characteristics of the junction were also studied through the (I-V) measurements under illumination of 40 mW/cm2. The cell parameters; the short-circuit current, the open-circuit voltage and the fill factor were estimated at room temperature.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Ideal laser-beam propagation through high-temperature ignition Hohlraum plasmas.

PubMed

Froula, D H; Divol, L; Meezan, N B; Dixit, S; Moody, J D; Neumayer, P; Pollock, B B; Ross, J S; Glenzer, S H

2007-02-23

We demonstrate that a blue (3omega, 351 nm) laser beam with an intensity of 2 x 10(15) W cm(-2) propagates nearly within the original beam cone through a millimeter scale, T(e)=3.5 keV high density (n(e)=5 x 10(20) cm(-3)) plasma. The beam produced less than 1% total backscatter at these high temperatures and densities; the resulting transmission is greater than 90%. Scaling of the electron temperature in the plasma shows that the plasma becomes transparent for uniform electron temperatures above 3 keV. These results are consistent with linear theory thresholds for both filamentation and backscatter instabilities inferred from detailed hydrodynamic simulations. This provides a strong justification for current inertial confinement fusion designs to remain below these thresholds.

Thermal shock tests to qualify different tungsten grades as plasma facing material

NASA Astrophysics Data System (ADS)

Wirtz, M.; Linke, J.; Loewenhoff, Th; Pintsuk, G.; Uytdenhouwen, I.

2016-02-01

The electron beam device JUDITH 1 was used to establish a testing procedure for the qualification of tungsten as plasma facing material. Absorbed power densities of 0.19 and 0.38 GW m-2 for an edge localized mode-like pulse duration of 1 ms were chosen. Furthermore, base temperatures of room temperature, 400 °C and 1000 °C allow investigating the thermal shock performance in the brittle, ductile and high temperature regime. Finally, applying 100 pulses under all mentioned conditions helps qualifying the general damage behaviour while with 1000 pulses for the higher power density the influence of thermal fatigue is addressed. The investigated reference material is a tungsten product produced according to the ITER material specifications. The obtained results provide a general overview of the damage behaviour with quantified damage characteristics and thresholds. In particular, it is shown that the damage strongly depends on the microstructure and related thermo-mechanical properties.

Discovery of a photoresponse amplification mechanism in compensated PN junctions

NASA Astrophysics Data System (ADS)

Zhou, Yuchun; Liu, Yu-Hsin; Rahman, Samia N.; Hall, David; Sham, L. J.; Lo, Yu-Hwa

2015-01-01

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions of the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.

Discovery of a photoresponse amplification mechanism in compensated PN junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Yuchun; Rahman, Samia N.; Hall, David

2015-01-19

We report the experimental evidence of uncovering a photoresponse amplification mechanism in heavily doped, partially compensated silicon p-n junctions under very low bias voltage. We show that the observed photocurrent gain occurs at a bias that is more than an order of magnitude below the threshold voltage for conventional impact ionization. Moreover, contrary to the case of avalanche detectors and p-i-n diodes, the amplified photoresponse is enhanced rather than suppressed with increasing temperature. These distinctive characteristics lead us to hypothesize that the inelastic scattering between energetic electrons (holes) and the ionized impurities in the depletion and charge neutral regions ofmore » the p-n junction in a cyclic manner plays a significant role in the amplification process. Such an internal signal amplification mechanism, which occurs at much lower bias than impact ionization and favors room temperature over cryogenic temperature, makes it promising for practical device applications.« less

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

PubMed

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

Assessment of indoor heat stress variability in summer and during heat warnings: a case study using the UTCI in Berlin, Germany

NASA Astrophysics Data System (ADS)

Walikewitz, Nadine; Jänicke, Britta; Langner, Marcel; Endlicher, Wilfried

2018-01-01

Humans spend most of their time in confined spaces and are hence primarily exposed to the direct influence of indoor climate. The Universal Thermal Climate Index (UTCI) was obtained in 31 rooms (eight buildings) in Berlin, Germany, during summer 2013 and 2014. The indoor UTCI was determined from measurements of both air temperature and relative humidity and from data of mean radiant temperature and air velocity, which were either measured or modeled. The associated outdoor UTCI was obtained through facade measurements of air temperature and relative humidity, simulation of mean radiant temperature, and wind data from a central weather station. The results show that all rooms experienced heat stress according to UTCI levels, especially during heat waves. Indoor UTCI varied up to 6.6 K within the city and up to 7 K within building. Heat stress either during day or at night occurred on 35 % of all days. By comparing the day and night thermal loads, we identified maximum values above the 32 °C threshold for strong heat stress during the nighttime. Outdoor UTCI based on facade measurements provided no better explanation of indoor UTCI variability than the central weather station. In contrast, we found a stronger relationship of outdoor air temperature and indoor air temperature. Building characteristics, such as the floor level or window area, influenced indoor heat stress ambiguously. We conclude that indoor heat stress is a major hazard, and more effort toward understanding the causes and creating effective countermeasures is needed.

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE PAGES

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; ...

2017-03-24

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Room-temperature-operation visible-emission semiconductor diode lasers

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.; Nuese, C. J.

1977-01-01

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported.

Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

PubMed

Singh, Shaivalini; Chakrabarti, P

2012-03-01

We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers

NASA Astrophysics Data System (ADS)

Chen, J. X.; Li, A. Z.; Chen, Y. Q.; Guo, F. M.; Lin, C.; Zhang, Y. G.; Qi, M.

2001-07-01

Lasers with emission wavelength of 1.8-2.1 μm offer many important applications to laser spectroscopy, eye-safe medical care and trace chemical detection. Strained InGaAs/InGaAsP structures on InP substrates have been reported as an alternative approach for the development of semiconductor laser diodes in the spectral range 1.8-2.1 μm due to the superior InP substrate quality and mature processing technology. In this paper we report the fabrication and performances of InGaAs/InGaAsP/InP strained quantum well lasers grown by gas source molecular beam epitaxy. The diodes show good I- V characteristics, and the typical turn-on voltage at room temperature is around 0.4-0.5 V. A threshold current of about 120 mA is achieved for a chip with 500 μm cavity length and 4.5 μm stripe width. The maximum output power with 10% duty cycle is 18 mW. The main peak of the laser spectrum is located at 1.84 μm.

Thermoelectric Power Generation from Lanthanum Strontium Titanium Oxide at Room Temperature through the Addition of Graphene.

PubMed

Lin, Yue; Norman, Colin; Srivastava, Deepanshu; Azough, Feridoon; Wang, Li; Robbins, Mark; Simpson, Kevin; Freer, Robert; Kinloch, Ian A

2015-07-29

The applications of strontium titanium oxide based thermoelectric materials are currently limited by their high operating temperatures of >700 °C. Herein, we show that the thermal operating window of lanthanum strontium titanium oxide (LSTO) can be reduced to room temperature by the addition of a small amount of graphene. This increase in operating performance will enable future applications such as generators in vehicles and other sectors. The LSTO composites incorporated one percent or less of graphene and were sintered under an argon/hydrogen atmosphere. The resultant materials were reduced and possessed a multiphase structure with nanosized grains. The thermal conductivity of the nanocomposites decreased upon the addition of graphene, whereas the electrical conductivity and power factor both increased significantly. These factors, together with a moderate Seebeck coefficient, meant that a high power factor of ∼2500 μWm(-1)K(-2) was reached at room temperature at a loading of 0.6 wt % graphene. The highest thermoelectric figure of merit (ZT) was achieved when 0.6 wt % graphene was added (ZT = 0.42 at room temperature and 0.36 at 750 °C), with >280% enhancement compared to that of pure LSTO. A preliminary 7-couple device was produced using bismuth strontium cobalt oxide/graphene-LSTO pucks. This device had a Seebeck coefficient of ∼1500 μV/K and an open voltage of 600 mV at a mean temperature of 219 °C.

Quantum dot quantum cascade infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning

2014-04-28

We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirpedmore » superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.« less

Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang

2016-03-09

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB–MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise tomore » a force acting on the skyrmions, in addition to the current-induced spin–orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems.« less

Room-Temperature Creation and Spin–Orbit Torque Manipulation of Skyrmions in Thin Films with Engineered Asymmetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Guoqiang; Upadhyaya, Pramey; Li, Xiang

2016-02-10

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB–MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise tomore » a force acting on the skyrmions, in addition to the current-induced spin–orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems.« less

Effects of air annealing on CdS quantum dots thin film grown at room temperature by CBD technique intended for photosensor applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaikh, Shaheed U.; Desale, Dipalee J.; Siddiqui, Farha Y.

2012-11-15

Graphical abstract: The effect of different intensities (40, 60 100 and 200 W) of light on CdS quantum dots thin film annealed at 350 °C indicating enhancement in (a) photo-current and (b) photosensitivity. Highlights: ► The preparation of CdS nanodot thin film at room temperature by M-CBD technique. ► Study of air annealing on prepared CdS nanodots thin film. ► The optimized annealing temperature for CdS nanodot thin film is 350 °C. ► Modified CdS thin films can be used in photosensor application. -- Abstract: CdS quantum dots thin-films have been deposited onto the glass substrate at room temperature usingmore » modified chemical bath deposition technique. The prepared thin films were further annealed in air atmosphere at 150, 250 and 350 °C for 1 h and subsequently characterized by scanning electron microscopy, ultraviolet–visible spectroscopy, electrical resistivity and I–V system. The modifications observed in morphology and opto-electrical properties of the thin films are presented.« less

[Studies on the health standard for room temperature in cold regions].

PubMed

Meng, Z L

1990-03-01

The microclimate of 205 rooms of single storey houses in four new rural residential districts in coastal and inland Shandong was monitored and studied the blood circulation of the finger, skin temperature, sweating function and other physiological indexes among 2,401 peasants. We interrogated their personal sensation to cold and warmth. The count was done by the application of thermal equilibrium index (TEI), predicted 4-hour Sweat Rate (P4SR) and the uncomfortable index. The standard room temperature is recommended as follows. In rural area in winter the appropriate room temperature is 14-16 degrees C, the comfortable room temperature is 16-20 degrees C, the lowest room temperature must not be below 14 degrees C. In summer the appropriate room temperature is 25-28 degrees C, the comfortable room temperature is 26-27 degrees C, the highest temperature must not be above 28 degrees C.

Microscopic origins of the large piezoelectricity of leadfree (Ba,Ca)(Zr,Ti)O3

NASA Astrophysics Data System (ADS)

Nahas, Yousra; Akbarzadeh, Alireza; Prokhorenko, Sergei; Prosandeev, Sergey; Walter, Raymond; Kornev, Igor; Íñiguez, Jorge; Bellaiche, L.

2017-06-01

In light of directives around the world to eliminate toxic materials in various technologies, finding lead-free materials with high piezoelectric responses constitutes an important current scientific goal. As such, the recent discovery of a large electromechanical conversion near room temperature in (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 compounds has directed attention to understanding its origin. Here, we report the development of a large-scale atomistic scheme providing a microscopic insight into this technologically promising material. We find that its high piezoelectricity originates from the existence of large fluctuations of polarization in the orthorhombic state arising from the combination of a flat free-energy landscape, a fragmented local structure, and the narrow temperature window around room temperature at which this orthorhombic phase is the equilibrium state. In addition to deepening the current knowledge on piezoelectricity, these findings have the potential to guide the design of other lead-free materials with large electromechanical responses.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas

2016-02-01

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (<3 × 1017 cm-3) responsible for p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.

Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy.

PubMed

Karakas, Vedat; Gokce, Aisha; Habiboglu, Ali Taha; Arpaci, Sevdenur; Ozbozduman, Kaan; Cinar, Ibrahim; Yanik, Cenk; Tomasello, Riccardo; Tacchi, Silvia; Siracusano, Giulio; Carpentieri, Mario; Finocchio, Giovanni; Hauet, Thomas; Ozatay, Ozhan

2018-05-08

Recently discovered exotic magnetic configurations, namely magnetic solitons appearing in the presence of bulk or interfacial Dzyaloshinskii-Moriya Interaction (i-DMI), have excited scientists to explore their potential applications in emerging spintronic technologies such as race-track magnetic memory, spin logic, radio frequency nano-oscillators and sensors. Such studies are motivated by their foreseeable advantages over conventional micro-magnetic structures due to their small size, topological stability and easy spin-torque driven manipulation with much lower threshold current densities giving way to improved storage capacity, and faster operation with efficient use of energy. In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayers by tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane) via interface engineering and postproduction treatments, we can stabilize a variety of magnetic configurations such as Néel skyrmions, horseshoes and most importantly, the recently predicted isolated radial vortices at room temperature and under zero bias field. Especially, the radial vortex state with its absolute convergence to or divergence from a single point can potentially offer exciting new applications such as particle trapping/detrapping in addition to magnetoresistive memories with efficient switching, where the radial vortex state can act as a source of spin-polarized current with radial polarization.

Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces

NASA Astrophysics Data System (ADS)

Hossain, Md I.; Maksud, M.; Palapati, N. K. R.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

2016-07-01

We have observed a super-giant (∼10 000 000%) negative magnetoresistance at 39 mT field in Cu nanowires contacted with Au contact pads. In these nanowires, potential barriers form at the two Cu/Au interfaces because of Cu oxidation that results in an ultrathin copper oxide layer forming between Cu and Au. Current flows when electrons tunnel through, and/or thermionically emit over, these barriers. A magnetic field applied transverse to the direction of current flow along the wire deflects electrons toward one edge of the wire because of the Lorentz force, causing electron accumulation at that edge and depletion at the other. This lowers the potential barrier at the accumulated edge and raises it at the depleted edge, causing a super-giant magnetoresistance at room temperature.

Measurements of CO, CO2, OH, and H2O in room-temperature and combustion gases by use of a broadly current-tuned multisection InGaAsP diode laser.

PubMed

Upschulte, B L; Sonnenfroh, D M; Allen, M G

1999-03-20

A new laser technology that achieves nearly 100-nm quasi-continuous tuning with only injection-current control in a four-section grating-coupler sampled-reflector laser was used to detect CO and CO(2) simultaneously in room-temperature gas mixtures. The same grating-coupler sampled-reflector laser was used to perform in situ measurements of CO, H(2)O, and OH in the exhaust gases of a CH(4)-air flame. This laser is being evaluated for inclusion in a multispecies combustion-emissions exhaust-analysis sensor, and its operational characteristics as they have an impact on gas sensing are described. Preliminary results suggest that this single laser can be used to replace multilaser sensor configurations for some combustion-emissions monitoring applications.

Origin and evolution of surface spin current in topological insulators

NASA Astrophysics Data System (ADS)

Dankert, André; Bhaskar, Priyamvada; Khokhriakov, Dmitrii; Rodrigues, Isabel H.; Karpiak, Bogdan; Kamalakar, M. Venkata; Charpentier, Sophie; Garate, Ion; Dash, Saroj P.

2018-03-01

The Dirac surface states of topological insulators offer a unique possibility for creating spin polarized charge currents due to the spin-momentum locking. Here we demonstrate that the control over the bulk and surface contribution is crucial to maximize the charge-to-spin conversion efficiency. We observe an enhancement of the spin signal due to surface-dominated spin polarization while freezing out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below 100 K . Detailed measurements up to room temperature exhibit a strong reduction of the magnetoresistance signal between 2 and100 K , which we attribute to the thermal excitation of bulk carriers and to the electron-phonon coupling in the surface states. The presence and dominance of this effect up to room temperature is promising for spintronic science and technology.

Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces.

PubMed

Hossain, Md I; Maksud, M; Palapati, N K R; Subramanian, A; Atulasimha, J; Bandyopadhyay, S

2016-07-29

We have observed a super-giant (∼10 000 000%) negative magnetoresistance at 39 mT field in Cu nanowires contacted with Au contact pads. In these nanowires, potential barriers form at the two Cu/Au interfaces because of Cu oxidation that results in an ultrathin copper oxide layer forming between Cu and Au. Current flows when electrons tunnel through, and/or thermionically emit over, these barriers. A magnetic field applied transverse to the direction of current flow along the wire deflects electrons toward one edge of the wire because of the Lorentz force, causing electron accumulation at that edge and depletion at the other. This lowers the potential barrier at the accumulated edge and raises it at the depleted edge, causing a super-giant magnetoresistance at room temperature.

Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

PubMed

Villa, E; Aja, B; de la Fuente, L; Artal, E

2016-01-01

This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

Current and Projected Burden of Disease From High Ambient Temperature in Korea.

PubMed

Chung, Soo Eun; Cheong, Hae-Kwan; Park, Jae-Hyun; Kim, Jong-Hun; Han, Hyunjin

2017-10-01

The objective of the present study was to estimate the current and projected burden of disease from high ambient temperature using population-based data sources of nationwide mortality and morbidity in Korea. Disability-adjusted life years (DALY) were estimated using noninjury-related deaths, and cerebrovascular and cardiovascular diseases from recently released nationwide health and mortality databases. Years of life lost and years lost due to disability were measured based on the point prevalence and number of deaths during the study period. Future DALY attributable to heat waves were estimated from projected populations, and temperature predictions for the years 2030 and 2050 were under Representative Concentration Pathways (RCP) 4.5 and 8.5 with summertime temperatures above threshold. Relative risks (RR) of total mortality and of cardiovascular disease were 1.02 (95% CI, 1.01, 1.02) and 1.08 (95% CI, 1.06, 1.09) for each 1°C increase in temperature above threshold, respectively. The morbidity of heat-related disease was RR 1.67 (95% CI, 1.64, 1.68) for each 1°C increase in temperature above threshold. DALY for all-cause death were 0.49 DALY/1000 in 2011, 0.71 (0.71) DALY/1000 in 2030 and 0.77 (1.72) DALY/1000 in 2050 based on RCP 4.5 (RCP 8.5). DALY for cardio- and cerebrovascular diseases were 1.24 DALY/1000 in 2011, 1.63 (1.82) DALY/1000 in 2030, and 1.76 (3.66) DALY/1000 in 2050 based on RCP 4.5 (RCP 8.5). Future excess mortality due to high ambient temperature is expected to be profound in Korea. Efforts to mitigate climate change can provide substantial health benefits via reducing heat-related mortality.

Room temperature solution processed low dimensional CH3NH3PbI3 NIR detector

NASA Astrophysics Data System (ADS)

Besra, N.; Paul, T.; Sarkar, P. K.; Thakur, S.; Sarkar, S.; Das, A.; Chanda, K.; Sardar, K.; Chattopadhyay, K. K.

2018-05-01

Metal halide perovskites have recently drawn immense research interests among the worldwide scientific community due to their excellent light harvesting capabilities and above all, cost effectiveness. These new class of materials have already been used as efficient optoelectronic devices e.g. solar cells, photo detectors, etc. Here in this work, room temperature NIR (near infra red) response of organic-inorganic lead halide perovskite CH3NH3PbI3 (Methylammonium lead tri iodide) nanorods has been studied. A very simple solution process technique has been adopted to synthesize CH3NH3PbI3 nanostructures at room temperature. The NIR exposure upon the sample resulted in a considerable hike in its dark current with very good responsivity (0.37 mA/W). Along with that, a good on-off ratio (41.8) was also obtained when the sample was treated under a pulsed NIR exposure with operating voltage of 2 V. The specific detectivity of the device came in the order of 1010 Jone.

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

PubMed

Tak, Young Jun; Ahn, Byung Du; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

2016-02-23

Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively.

Adsorption and Desorption of Hydrogen by Gas-Phase Palladium Clusters Revealed by In Situ Thermal Desorption Spectroscopy.

PubMed

Takenouchi, Masato; Kudoh, Satoshi; Miyajima, Ken; Mafuné, Fumitaka

2015-07-02

Adsorption and desorption of hydrogen by gas-phase Pd clusters, Pdn(+), were investigated by thermal desorption spectroscopy (TDS) experiments and density functional theory (DFT) calculations. The desorption processes were examined by heating the clusters that had adsorbed hydrogen at room temperature. The clusters remaining after heating were monitored by mass spectrometry as a function of temperature up to 1000 K, and the temperature-programmed desorption (TPD) curve was obtained for each Pdn(+). It was found that hydrogen molecules were released from the clusters into the gas phase with increasing temperature until bare Pdn(+) was formed. The threshold energy for desorption, estimated from the TPD curve, was compared to the desorption energy calculated by using DFT, indicating that smaller Pdn(+) clusters (n ≤ 6) tended to have weakly adsorbed hydrogen molecules, whereas larger Pdn(+) clusters (n ≥ 7) had dissociatively adsorbed hydrogen atoms on the surface. Highly likely, the nonmetallic nature of the small Pd clusters prevents hydrogen molecule from adsorbing dissociatively on the surface.

Development of Yellow Sand Image Products Using Infrared Brightness Temperature Difference Method

NASA Astrophysics Data System (ADS)

Ha, J.; Kim, J.; Kwak, M.; Ha, K.

2007-12-01

A technique for detection of airborne yellow sand dust using meteorological satellite has been developed from various bands from ultraviolet to infrared channels. Among them, Infrared (IR) channels have an advantage of detecting aerosols over high reflecting surface as well as during nighttime. There had been suggestion of using brightness temperature difference (BTD) between 11 and 12¥ìm. We have found that the technique is highly depends on surface temperature, emissivity, and zenith angle, which results in changing the threshold of BTD. In order to overcome these problems, we have constructed the background brightness temperature threshold of BTD and then aerosol index (AI) has been determined from subtracting the background threshold from BTD of our interested scene. Along with this, we utilized high temporal coverage of geostationary satellite, MTSAT, to improve the reliability of the determined AI signal. The products have been evaluated by comparing the forecasted wind field with the movement fiend of AI. The statistical score test illustrates that this newly developed algorithm produces a promising result for detecting mineral dust by reducing the errors with respect to the current BTD method.

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

NASA Technical Reports Server (NTRS)

Kressel, H.; Ettenberg, M.; Ladany, I.

1978-01-01

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

The effects of temperature on the crystalline properties and resistant starch during storage of white bread.

PubMed

Sullivan, William R; Hughes, Jeff G; Cockman, Russell W; Small, Darryl M

2017-08-01

Resistant starch (RS) can form during storage of foods, thereby bestowing a variety of potential health benefits. The purpose of the current study has been to determine the influence of storage temperature and time on the crystallinity and RS content of bread. Loaves of white bread were baked and stored at refrigeration, frozen and room temperatures with analysis over a period of zero to seven days. RS determination and X-ray diffraction (XRD) were used to evaluate the influence of storage temperature and time on total crystallinity and RS content. The rate of starch recrystallisation was affected by storage temperature and time, where refrigeration temperatures accelerated RS formation and total crystallinity more than storage time at both frozen and room temperature. A strong statistical model has been established between RS formation in bread and XRD patterns, having a 96.7% fit indicating the potential of XRD to measure RS concentrations. Copyright © 2017 Elsevier Ltd. All rights reserved.

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

NASA Astrophysics Data System (ADS)

Jung, A.; Zhang, Y.; Arroyo Rojas Dasilva, Y.; Isa, F.; von Känel, H.

2018-02-01

We study covalent bonds between p-doped Si wafers (resistivity ˜10 Ω cm) fabricated on a recently developed 200 mm high-vacuum system. Oxide- and void free interfaces were obtained by argon (Ar) or neon (Ne) sputtering prior to wafer bonding at room temperature. The influence of the sputter induced amorphous Si layer at the bonding interface on the electrical behavior is accessed with temperature-dependent current-voltage measurements. In as-bonded structures, charge transport is impeded by a potential barrier of 0.7 V at the interface with thermionic emission being the dominant charge transport mechanism. Current-voltage characteristics are found to be asymmetric which can tentatively be attributed to electric dipole formation at the interface as a result of the time delay between the surface preparation of the two bonding partners. Electron beam induced current measurements confirm the corresponding asymmetric double Schottky barrier like band-alignment. Moreover, we demonstrate that defect annihilation at a low temperature of 400 °C increases the electrical conductivity by up to three orders of magnitude despite the lack of recrystallization of the amorphous layer. This effect is found to be more pronounced for Ne sputtered surfaces which is attributed to the lighter atomic mass compared to Ar, inducing weaker lattice distortions during the sputtering.

Interior detail view showing worn threshold in doorway between kitchen ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Interior detail view showing worn threshold in doorway between kitchen and west room in north addition. Camera facing west. - Warner Ranch, Ranch House, San Felipe Road (State Highway S2), Warner Springs, San Diego County, CA

Low Temperature Operation of a Switching Power Converter

NASA Technical Reports Server (NTRS)

Anglada-Sanchez, Carlos R.; Perez-Feliciano, David; Ray, Biswajit

1997-01-01

The low temperature operation of a 48 W, 50 kHz, 36/12 V pulse width modulated (PWM) buck de-de power converter designed with standard commercially available components and devices is reported. The efficiency of the converter increased from 85.6% at room temperature (300 K) to 92.0% at liquid nitrogen temperature (77 K). The variation of power MOSFET, diode rectifier, and output filter inductor loss with temperature is discussed. Relevant current, voltage. and power waveforms are also included.

Reference breast temperature: proposal of an equation.

PubMed

Souza, Gladis Aparecida Galindo Reisemberger de; Brioschi, Marcos Leal; Vargas, José Viriato Coelho; Morais, Keli Cristiane Correia; Dalmaso Neto, Carlos; Neves, Eduardo Borba

2015-01-01

To develop an equation to estimate the breast reference temperature according to the variation of room and core body temperatures. Four asymptomatic women were evaluated for three consecutive menstrual cycles. Using thermography, the temperature of breasts and eyes was measured as indirect reference of core body and room temperatures. To analyze the thermal behavior of the breasts during the cycle, the core body and room temperatures were normalized by means of a mathematical equation. We performed 180 observations and the core temperature had the highest correlation with the breast temperature, followed by room temperature. The proposed prediction model could explain 45.3% of the breast temperature variation, with variable room temperature variable; it can be accepted as a way to estimate the reference breast temperature at different room temperatures. The average breast temperature in healthy women had a direct relation with the core and room temperature and can be estimated mathematically. It is suggested that an equation could be used in clinical practice to estimate the normal breast reference temperature in young women, regardless of the day of the cycle, therefore assisting in evaluation of anatomical studies.

Spin transport study in a Rashba spin-orbit coupling system

PubMed Central

Mei, Fuhong; Zhang, Shan; Tang, Ning; Duan, Junxi; Xu, Fujun; Chen, Yonghai; Ge, Weikun; Shen, Bo

2014-01-01

One of the most important topics in spintronics is spin transport. In this work, spin transport properties of two-dimensional electron gas in AlxGa1-xN/GaN heterostructure were studied by helicity-dependent photocurrent measurements at room temperature. Spin-related photocurrent was detected under normal incidence of a circularly polarized laser with a Gaussian distribution. On one hand, spin polarized electrons excited by the laser generate a diffusive spin polarization current, which leads to a vortex charge current as a result of anomalous circular photogalvanic effect. On the other hand, photo-induced spin polarized electrons driven by a longitudinal electric field give rise to a transverse current via anomalous Hall Effect. Both of these effects originated from the Rashba spin-orbit coupling. By analyzing spin-related photocurrent varied with laser position, the contributions of the two effects were differentiated and the ratio of the spin diffusion coefficient to photo-induced anomalous spin Hall mobility Ds/μs = 0.08 V was extracted at room temperature. PMID:24504193

Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

NASA Astrophysics Data System (ADS)

Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

2018-01-01

The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

Flaw growth behavior in thick welded plates of 2219-T87 aluminum at room and cryogenic temperatures

NASA Technical Reports Server (NTRS)

Forman, R. G.; Glorioso, S. V.; Medlock, J. D.

1973-01-01

Axial load fatigue and fracture tests were conducted on thick welded plates of 2219-T87 aluminum alloy to determine the tensile strength properties and the flaw growth behavior in electron beam, gas metal arc, and pulse current gas tungsten arc welds for plates 6.35 centimeters (2.5 in.) thick. The tests were conducted in room temperature air and in liquid nitrogen environments. Specimens were tested in both the as-welded and the aged after welding conditions. The experimental crack growth rate were correlated with theoretical crack growth rate predictions for semielliptical surface flaws.

High-speed 850-nm VCSELs for 40-Gb/s transmission

NASA Astrophysics Data System (ADS)

Gustavsson, Johan; Westbergh, Petter; Szczerba, Krzysztof; Haglund, Åsa; Larsson, Anders; Karlsson, Magnus; Andrekson, Peter; Hopfer, Friedhelm; Fiol, Gerrit; Bimberg, Dieter; Olsson, Bengt-Erik; Kristiansson, A.; Healy, Sorcha; O'Reilly, Eoin; Joel, Andrew

2010-04-01

We have explored the possibility to extend the data transmission rate for standard 850-nm GaAs-based VCSELs beyond the 10 Gbit/s limit of today's commercially available directly-modulated devices. By sophisticated tailoring of the design for high-speed performance we demonstrate that 10 Gb/s is far from the upper limit. For example, the thermal conductivity of the bottom mirror is improved by the use of binary compounds, and the electrical parasitics are kept at a minimum by incorporating a large diameter double layered oxide aperture in the design. We also show that the intrinsic high speed performance is significantly improved by replacing the traditional GaAs QWs with strained InGaAs QWs in the active region. The best overall performance is achieved for a device with a 9 μm diameter oxide aperture, having in a threshold current of 0.6 mA, a maximum output power of 9 mW, a thermal resistance of 1.9 °C/mW, and a differential resistance of 80 Ω. The measured 3dB bandwidth exceeds 20 GHz, and we experimentally demonstrate that the device is capable of error-free transmission (BER<10-12) under direct modulation at a record-high bit-rate of 32 Gb/s over 50 m of OM3 fiber at room temperature, and at 25 Gb/s over 100 m of OM3 fiber at 85 °C. We also demonstrate transmission at 40 Gb/s over 200 m of OM3+ fiber at room temperature using a subcarrier multiplexing scheme with a spectrally efficient 16 QAM modulation format. All transmission results were obtained with the VCSEL biased at current densities between 11-14 kA/cm2, which is close to the 10 kA/cm2 industry benchmark for reliability. Finally, we show that by a further reduction of the oxide capacitance and by reducing the photon lifetime using a shallow surface etch, a record bandwidth of 23 GHz for 850 nm VCSELs can be reached.

Effect of treatment temperature on the microstructure of asphalt binders: insights on the development of dispersed domains.

PubMed

Menapace, I; Masad, E; Bhasin, A

2016-04-01

This paper offers important insights on the development of the microstructure in asphalt binders as a function of the treatment temperature. Different treatment temperatures are useful to understand how dispersed domains form when different driving energies for the mobility of molecular species are provided. Small and flat dispersed domains, with average diameter between 0.02 and 0.70 μm, were detected on the surface of two binders at room temperature, and these domains were observed to grow with an increase in treatment temperature (up to over 2 μm). Bee-like structures started to appear after treatment at or above 100°C. Moreover, the effect of the binder thickness on its microstructure at room temperature and at higher treatment temperatures was investigated and is discussed in this paper. At room temperature, the average size of the dispersed domains increased as the binder thickness decreased. A hypothesis that conciliates current theories on the origin and development of dispersed domains is proposed. Small dispersed domains (average diameter around 0.02 μm) are present in the bulk of the binder, whereas larger domains and bee-like structures develop on the surface, following heat treatment or mechanical disturbance that reduces the film thickness. Molecular mobility and association are the key factors in the development of binder microstructure. © 2015 The Authors Journal of Microscopy © 2015 Royal Microscopical Society.

Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature

NASA Astrophysics Data System (ADS)

Alim, Mohammad A.; Ali, Mayahsa M.; Rezazadeh, Ali A.

2018-07-01

Nonlinearity analysis using two-tone intermodulation distortion (IMD) technique for 0.5 μm gate-length AlGaAs/GaAs based high electron mobility transistor have been investigated based on biasing conditions, input power, frequency and temperature. The outcomes indicate a significant modification on the output IMD power and as well as the minimum distortion level. The input IMD power effects the output current and subsequently the threshold voltage reduces, resulting to an increment in the output IMD power. Both frequency and temperature reduces the magnitude of the output IMDs. In addition, the threshold voltage response with temperature alters the notch point of the nonlinear output IMD’s accordingly. The aforementioned investigation will help the circuit designers to evaluate the best biasing option in terms of minimum distortion, maximum gain for future design optimizations.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

Investigation of significantly high barrier height in Cu/GaN Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R.

2016-01-15

Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantlymore » higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.« less

Advanced Control Surface Seal Development for Future Space Vehicles

NASA Technical Reports Server (NTRS)

DeMange, J. J.; Dunlap, P. H., Jr.; Steinetz, B. M.

2004-01-01

NASA s Glenn Research Center (GRC) has been developing advanced high temperature structural seals since the late 1980's and is currently developing seals for future space vehicles as part of the Next Generation Launch Technology (NGLT) program. This includes control surface seals that seal the edges and hinge lines of movable flaps and elevons on future reentry vehicles. In these applications, the seals must operate at temperatures above 2000 F in an oxidizing environment, limit hot gas leakage to protect underlying structures, endure high temperature scrubbing against rough surfaces, and remain flexible and resilient enough to stay in contact with sealing surfaces for multiple heating and loading cycles. For this study, three seal designs were compared against the baseline spring tube seal through a series of compression tests at room temperature and 2000 F and flow tests at room temperature. In addition, canted coil springs were tested as preloaders behind the seals at room temperature to assess their potential for improving resiliency. Addition of these preloader elements resulted in significant increases in resiliency compared to the seals by themselves and surpassed the performance of the baseline seal at room temperature. Flow tests demonstrated that the seal candidates with engineered cores had lower leakage rates than the baseline spring tube design. However, when the seals were placed on the preloader elements, the flow rates were higher as the seals were not compressed as much and therefore were not able to fill the groove as well. High temperature tests were also conducted to asses the compatibility of seal fabrics against ceramic matrix composite (CMC) panels anticipated for use in next generation launch vehicles. These evaluations demonstrated potential bonding issues between the Nextel fabrics and CMC candidates.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the current spreading was not effectively limited until etching went below the doped cladding layer. A recombination coefficient analysis was performed to investigate the effect of strain on Auger recombination predicted by theory. An indirect method to infer both the nonradiative recombination coefficient and the Auger recombination coefficient was initially used. The measured values of the recombination coefficients were consistent with theoretical predictions and measurements based on other material systems. The Auger recombination was lower than expected, indicating that Auger recombination is reduced in these strained QWs. To understand the carrier dynamics, impedance measurements were carried out for the first time in AlGaInAs strained QW lasers. A small-signal, sub-threshold equivalent circuit model was derived from the laser rate equations to model the measured laser impedance. Several characteristic carrier lifetimes were obtained directly from these electrical impedance measurements. From the temperature dependence of the QW escape time, it was found that hole rather than electron leakage is dominant in the AlGaInAs system due to the relatively low valence band offset. This may explain why the improvement of T0 in AlGaInAs QW 1.55 mum active regions is limited.

Forecasting the viability of sea turtle eggs in a warming world.

PubMed

Pike, David A

2014-01-01

Animals living in tropical regions may be at increased risk from climate change because current temperatures at these locations already approach critical physiological thresholds. Relatively small temperature increases could cause animals to exceed these thresholds more often, resulting in substantial fitness costs or even death. Oviparous species could be especially vulnerable because the maximum thermal tolerances of incubating embryos is often lower than adult counterparts, and in many species mothers abandon the eggs after oviposition, rendering them immobile and thus unable to avoid extreme temperatures. As a consequence, the effects of climate change might become evident earlier and be more devastating for hatchling production in the tropics. Loggerhead sea turtles (Caretta caretta) have the widest nesting range of any living reptile, spanning temperate to tropical latitudes in both hemispheres. Currently, loggerhead sea turtle populations in the tropics produce nearly 30% fewer hatchlings per nest than temperate populations. Strong correlations between empirical hatching success and habitat quality allowed global predictions of the spatiotemporal impacts of climate change on this fitness trait. Under climate change, many sea turtle populations nesting in tropical environments are predicted to experience severe reductions in hatchling production, whereas hatching success in many temperate populations could remain unchanged or even increase with rising temperatures. Some populations could show very complex responses to climate change, with higher relative hatchling production as temperatures begin to increase, followed by declines as critical physiological thresholds are exceeded more frequently. Predicting when, where, and how climate change could impact the reproductive output of local populations is crucial for anticipating how a warming world will influence population size, growth, and stability.

Thresholds of information leakage for speech security outside meeting rooms.

PubMed

Robinson, Matthew; Hopkins, Carl; Worrall, Ken; Jackson, Tim

2014-09-01

This paper describes an approach to provide speech security outside meeting rooms where a covert listener might attempt to extract confidential information. Decision-based experiments are used to establish a relationship between an objective measurement of the Speech Transmission Index (STI) and a subjective assessment relating to the threshold of information leakage. This threshold is defined for a specific percentage of English words that are identifiable with a maximum safe vocal effort (e.g., "normal" speech) used by the meeting participants. The results demonstrate that it is possible to quantify an offset that links STI with a specific threshold of information leakage which describes the percentage of words identified. The offsets for male talkers are shown to be approximately 10 dB larger than for female talkers. Hence for speech security it is possible to determine offsets for the threshold of information leakage using male talkers as the "worst case scenario." To define a suitable threshold of information leakage, the results show that a robust definition can be based upon 1%, 2%, or 5% of words identified. For these percentages, results are presented for offset values corresponding to different STI values in a range from 0.1 to 0.3.

Room temperature elastic properties of Rh-based alloys studied by surface Brillouin scattering

NASA Astrophysics Data System (ADS)

Sumanya, C.; Mathe, B. A.; Comins, J. D.; Every, A. G.; Osawa, M.; Harada, H.

2014-10-01

Platinum metal group alloys are promising materials for use in a new generation of gas turbine engines owing to their excellent high-temperature properties. In the present work, room temperature elastic properties of single crystals of Rh3Nb and Rh3Zr are investigated. Surface Brillouin scattering spectra for a range of wave vector directions on the (001) surface have been acquired in order to determine the angular variation of the velocities of the Rayleigh and pseudo-surface acoustic waves and that of the longitudinal lateral wave (LLW) threshold within the Lamb shoulder. The elastic stiffness constants C11, C12, and C44 of these cubic crystal specimens have been derived using two approaches: the first involving the least-squares fit of the combined measured wave velocity data to calculated values and the second an analytical approach using the Rayleigh velocities in the [100] and [110] directions and LLW velocity in the [100] direction, and extracting the elastic stiffness constants from the secular equations for these velocities. Results from the two methods are in good agreement and are for Rh3Nb, C11 = 368 ± 3, C12 = 186 ± 5, and C44 = 161 ± 3 in GPa; and for Rh3Zr, C11 = 329 ± 4, C12 = 185 ± 6, and C44 = 145 ± 4 in GPa.

Influence of load and temperature on tribological behaviour of electroless Ni-P deposits

NASA Astrophysics Data System (ADS)

Kundu, S.; Das, S. K.; Sahoo, P.

2016-09-01

Electroless Ni-P coatings have shown tremendous potential as tribology material at room temperature. However, the performance of the same in high temperature field needs to be evaluated as investigation reveals the softening of most of the coating materials. In the current study, both as-deposited as well as heat treated samples are developed for the performance evaluation. Coatings are tested under different loads with a constant speed and at temperatures ranging from room temperature (R.T.) to 500°C. Tribological tests are carried out on a pin-on- disc tribotester by selecting a wear track diameter of 60 mm for 5 minutes. Wear is reported in the form of wear rate by following Archard's equation. The microstructure characterization of the coating is performed using SEM (Scanning Electron Microscopy), EDX (Energy Dispersive X-Ray Analysis) and XRD (X-Ray Diffraction Analysis). Coating is developed with phosphorous weight percentages around 9% on cylindrical mild steel samples and the deposition thickness is observed to be around 50 μm. The as-deposited coating is found to be amorphous in nature and hardness of the as-deposited coating is found to be around 585HV01. Friction coefficient increases initially with the increase in temperature from room temperature up to 100°C but thereafter gradually decrease with the increase in temperature. Initial increase in temperature (up to 100°C) provides higher rate of wear compared to room temperature but with further increase it drops in most of the cases. Wear rate increases with the increase in temperature but as it crosses or nears the phase transformation temperature (around 340°C), the scenario gets reversed. From X-ray diffraction analysis, it is found that coating is amorphous in as-deposited condition but transforms into a crystalline structure with heat treatment.

Tunneling electron induced chemisorption of copper phthalocyanine molecules on the Cu(111) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stock, T.; Nogami, J.

2014-02-17

The adsorption of up to one monolayer (ML) of copper phthalocyanine (CuPc) molecules on a room temperature Cu(111) surface has been studied using scanning tunneling microscopy (STM). Below 1 ML the molecules are in a fluid state and are highly mobile on the surface. At 1 ML coverage the molecules coalesce into a highly ordered 2D crystal phase. At sub-ML coverages, chemisorption of individual CuPc molecules can be induced through exposure to tunneling electrons at a tunneling bias voltage exceeding a threshold value. This tunneling electron induced effect has been exploited to perform molecular STM lithography.

Bose-Einstein condensation of photons from the thermodynamic limit to small photon numbers

NASA Astrophysics Data System (ADS)

Nyman, Robert A.; Walker, Benjamin T.

2018-03-01

Photons can come to thermal equilibrium at room temperature by scattering multiple times from a fluorescent dye. By confining the light and dye in a microcavity, a minimum energy is set and the photons can then show Bose-Einstein condensation. We present here the physical principles underlying photon thermalization and condensation, and review the literature on the subject. We then explore the 'small' regime where very few photons are needed for condensation. We compare thermal equilibrium results to a rate-equation model of microlasers, which includes spontaneous emission into the cavity, and we note that small systems result in ambiguity in the definition of threshold.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Po-Tsun; Shieh, Han-Ping; Chou, Yi-Teh

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementingmore » a nitrogen doping process.« less

Efficient, diode-pumped Tm3+:BaY2F8 vibronic laser

NASA Astrophysics Data System (ADS)

Cornacchia, F.; Parisi, D.; Bernardini, C.; Toncelli, A.; Tonelli, M.

2004-05-01

In this work we report the spectroscopy and laser results of several Thulium doped BaY2F8 single crystals grown using the Czochralski technique. The doping concentration is between 2at.% and 18at.%. We performed room temperature laser experiments pumping the samples with a laser diode at 789 nm obtaining 61% as maximum optical-to-optical efficiency with a maximum output power of 290 mW and a minimum lasing threshold of 26 mW. The lasing wavelength changed with the dopant concentration from 1927 nm up to 2030 nm and the nature of the transition changed from purely electronic to vibronic, accordingly.

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

PubMed

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Reference breast temperature: proposal of an equation

PubMed Central

de Souza, Gladis Aparecida Galindo Reisemberger; Brioschi, Marcos Leal; Vargas, José Viriato Coelho; Morais, Keli Cristiane Correia; Dalmaso, Carlos; Neves, Eduardo Borba

2015-01-01

ABSTRACT Objective To develop an equation to estimate the breast reference temperature according to the variation of room and core body temperatures. Methods Four asymptomatic women were evaluated for three consecutive menstrual cycles. Using thermography, the temperature of breasts and eyes was measured as indirect reference of core body and room temperatures. To analyze the thermal behavior of the breasts during the cycle, the core body and room temperatures were normalized by means of a mathematical equation. Results We performed 180 observations and the core temperature had the highest correlation with the breast temperature, followed by room temperature. The proposed prediction model could explain 45.3% of the breast temperature variation, with variable room temperature variable; it can be accepted as a way to estimate the reference breast temperature at different room temperatures. Conclusion The average breast temperature in healthy women had a direct relation with the core and room temperature and can be estimated mathematically. It is suggested that an equation could be used in clinical practice to estimate the normal breast reference temperature in young women, regardless of the day of the cycle, therefore assisting in evaluation of anatomical studies. PMID:26761549

Survival of Salmonella enterica serovar infantis on and within stored table eggs.

PubMed

Lublin, Avishai; Maler, Ilana; Mechani, Sara; Pinto, Riky; Sela-Saldinger, Shlomo

2015-02-01

Contaminated table eggs are considered a primary source of foodborne salmonellosis globally. Recently, a single clone of Salmonella enterica serovar Infantis emerged in Israel and became the predominant serovar isolated in poultry. This clone is currently the most prevalent strain in poultry and is the leading cause of salmonellosis in humans. Because little is known regarding the potential transmission of this strain from contaminated eggs to humans, the objective of this study was to evaluate the ability of Salmonella Infantis to survive on the eggshell or within the egg during cold storage or at room temperature. Salmonella cells (5.7 log CFU per egg) were inoculated on the surface of 120 intact eggs or injected into the egg yolk (3.7 log CFU per egg) of another 120 eggs. Half of the eggs were stored at 5.5 ± 0.3°C and half at room temperature (25.5 ± 0.1°C) for up to 10 weeks. At both temperatures, the number of Salmonella cells on the shell declined by 2 log up to 4 weeks and remained constant thereafter. Yolk-inoculated Salmonella counts at cold storage declined by 1 log up to 4 weeks and remained constant, while room-temperature storage supported the growth of the pathogen to a level of 8 log CFU/ml of total egg content, as early as 4 weeks postinoculation. Examination of egg content following surface inoculation revealed the presence of Salmonella in a portion of the eggs at both temperatures up to 10 weeks, suggesting that this strain can also penetrate through the shell and survive within the egg. These findings imply that Salmonella enterica serovar Infantis is capable of survival both on the exterior and interior of table eggs and even multiply inside the egg at room temperature. Our findings support the need for prompt refrigeration to prevent Salmonella multiplication during storage of eggs at room temperature.

Divalent cations potentiate TRPV1 channel by lowering the heat activation threshold

PubMed Central

Cao, Xu; Ma, Linlin; Yang, Fan

2014-01-01

Transient receptor potential vanilloid type 1 (TRPV1) channel responds to a wide spectrum of physical and chemical stimuli. In doing so, it serves as a polymodal cellular sensor for temperature change and pain. Many chemicals are known to strongly potentiate TRPV1 activation, though how this is achieved remains unclear. In this study we investigated the molecular mechanism underlying the gating effects of divalent cations Mg2+ and Ba2+. Using a combination of fluorescence imaging and patch-clamp analysis, we found that these cations potentiate TRPV1 gating by most likely promoting the heat activation process. Mg2+ substantially lowers the activation threshold temperature; as a result, a significant fraction of channels are heat-activated at room temperature. Although Mg2+ also potentiates capsaicin- and voltage-dependent activation, these processes were found either to be not required (in the case of capsaicin) or insufficient (in the case of voltage) to mediate the activating effect. In support of a selective effect on heat activation, Mg2+ and Ba2+ cause a Ca2+-independent desensitization that specifically prevents heat-induced channel activation but does not prevent capsaicin-induced activation. These results can be satisfactorily explained within an allosteric gating framework in which divalent cations strongly promote the heat-dependent conformational change or its coupling to channel activation, which is further coupled to the voltage- and capsaicin-dependent processes. PMID:24344247

Stable organic thin-film transistors

PubMed Central

Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

2018-01-01

Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

Alternating current line-filter based on electrochemical capacitor utilizing template-patterned graphene.

PubMed

Wu, Zhenkun; Li, Liyi; Lin, Ziyin; Song, Bo; Li, Zhuo; Moon, Kyoung-Sik; Wong, Ching-Ping; Bai, Shu-Lin

2015-06-17

Aluminum electrolytic capacitors (AECs) are widely used for alternating current (ac) line-filtering. However, their bulky size is becoming more and more incompatible with the rapid development of portable electronics. Here we report a scalable process to fabricate miniaturized graphene-based ac line-filters on flexible substrates at room temperature. In this work, graphene oxide (GO) is reduced by patterned metal interdigits at room temperature and used directly as the electrode material. The as-fabricated device shows a phase angle of -75.4° at 120 Hz with a specific capacitance of 316 µF/cm(2) and a RC time constant of 0.35 ms. In addition, it retains 97.2% of the initial capacitance after 10000 charge/discharge cycles. These outstanding performance characteristics of our device demonstrate its promising to replace the conventional AECs for ac line filtering.

Lateral spin transfer torque induced magnetic switching at room temperature demonstrated by x-ray microscopy

NASA Astrophysics Data System (ADS)

Buhl, M.; Erbe, A.; Grebing, J.; Wintz, S.; Raabe, J.; Fassbender, J.

2013-10-01

Changing and detecting the orientation of nanomagnetic structures, which can be used for durable information storage, needs to be developed towards true nanoscale dimensions for keeping up the miniaturization speed of modern nanoelectronic components. Therefore, new concepts for controlling the state of nanomagnets are currently in the focus of research in the field of nanoelectronics. Here, we demonstrate reproducible switching of a purely metallic nanopillar placed on a lead that conducts a spin-polarized current at room temperature. Spin diffusion across the metal-metal (Cu to CoFe) interface between the pillar and the lead causes spin accumulation in the pillar, which may then be used to set the magnetic orientation of the pillar. In our experiments, the detection of the magnetic state of the nanopillar is performed by direct imaging via scanning transmission x-ray microscopy (STXM).

Probing local work function of electron emitting Si-nanofacets

NASA Astrophysics Data System (ADS)

Basu, Tanmoy; Som, Tapobrata

2017-10-01

Large area, Si-nanofacets are synthesized by obliquely incident low energy Ar+-ion-beam bombardment at room temperature (RT). The field emission properties of such nanofacets are studied based on current-voltage measurements and the Fowler-Nordheim equation. Low turn-on field with relatively high current density is obtained due to the shape and an overall rough morphology. We demonstrate a tunable field emission property from the silicon nanofacets by varying the ion exposure time. Atomic force microscopy (AFM) in conjunction with Kelvin probe force microscopy (KPFM) measurements provide the information on the aspect ratio and confirms the presence of native oxide layer near the apexes of the facets, respectively. The inhomogeneous oxidation leads to an increase in the local work function at the apexes of the facets, restricting the electron emission from the same. Due to its room temperature fabrication, the present method is of great significance to the low-cost vacuum field emission devices fabrication.

X-ray detection with zinc-blende (cubic) GaN Schottky diodes

NASA Astrophysics Data System (ADS)

Gohil, T.; Whale, J.; Lioliou, G.; Novikov, S. V.; Foxon, C. T.; Kent, A. J.; Barnett, A. M.

2016-07-01

The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At -5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm-2 and (189.0 ± 0.2) mA cm-2, respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.

LaAlO3: A substrate material with unusual ferroelastic properties

NASA Astrophysics Data System (ADS)

Kustov, S.; Liubimova, Iu.; Salje, E. K. H.

2018-01-01

Twin boundary dynamics in LaAlO3 is associated with non-linear anelasticity. Ultrasonic studies of non-linear twin boundary dynamics between 80 and 520 K show that cooling substrates from temperatures near the ferroelastic transition at 813 K generate three characteristic thermal regimes with different non-linear dynamics. Twin boundaries are initially highly mobile. Anelastic strain amplitudes versus stress are power law distributed with an exponent of 2.5. No de-pinning was found down to elastic strain amplitudes of ɛ0 ˜ 10-7. The power law is gradually replaced between 370 K and 280 K by few large singularities (jerks) due to massive rearrangements of the domain structure for ɛ0 larger than ca. 5 × 10-5. At lower temperatures, the domain structure is pinned with well-defined thresholds for de-pinning. The de-pinning is not accompanied by global rearrangements of twin patterns below room temperature. Unexpectedly, the low-temperature critical de-pinning strain amplitude decreases with decreasing temperature, which may indicate an additional, so far unknown phase transition near 40 K.

Neutron radiation damage and recovery studies of SiPMs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsang, T.; Rao, T.; Stoll, S.

We characterized the performance of Silicon Photomultipliers (SiPMs) before and after exposure of up to 10 12 neutron/cm 2 dosage. We show that the typical orders of magnitude increase of dark current upon neutron irradiation can be suppressed by operating it at a lower temperature and single-photoelectron detection capability can be restored. The required operating temperature depends on the dosage received. Furthermore, after high temperature thermal annealing, there is compelling evidence that the extrinsic dark current is lowered by orders of magnitude and single-photon detection performance are to some extent recovered at room temperature. Our experimental findings might have widespreadmore » implications for extending the functionality and the useful lifetime of current and future large scale SiPM detectors deployed in ionization radiation environment.« less

Current rectification for transport of room-temperature ionic liquids through conical nanopores

DOE PAGES

Jiang, Xikai; Liu, Ying; Qiao, Rui

2016-02-09

Here, we studied the transport of room-temperature ionic liquids (RTILs) through charged conical nanopores using a Landau-Ginzburg-type continuum model that takes steric effect and strong ion-ion correlations into account. When the surface charge is uniform on the pore wall, weak current rectification is observed. When the charge density near the pore base is removed, the ionic current is greatly suppressed under negative bias voltage while nearly unchanged under positive bias voltage, thereby leading to enhanced current rectification. These predictions agree qualitatively with prior experimental observations, and we elucidated them by analyzing the different components of the ionic current and themore » structural changes of electrical double layers (EDLs) at the pore tip under different bias voltages and surface charge patterns. These analyses reveal that the different modifications of the EDL structure near the pore tip by the positive and negative bias voltages cause the current rectification and the observed dependence on the distribution of surface charge on the pore wall. The fact that the current rectification phenomena are captured qualitatively by the simple model originally developed for describing EDLs at equilibrium conditions suggests that this model may be promising for understanding the ionic transport under nonequilibrium conditions when the EDL structure is strongly perturbed by external fields.« less

Adequacy of solar energy to keep babies warm.

PubMed

Daga, S R; Sequera, D; Goel, S; Desai, B; Gajendragadkar, A

1996-02-01

Solar energy could be used as an alternate energy source for keeping neonates warm especially in tropical countries. The present study investigated the efficacy of solar powered room heating system. Referral center for neonatal care. A fluid system heated by solar panels and circulated into a room was used to maintain room temperature. A servocontrolled heating device was used to regulate and maintain desired room temperature. Neonatal rectal temperature and room temperature. Infants between 1750-2250 g were observed to require a mean room temperature of 32.5 degrees C to maintain normothermia. In 85 infants less than 1500 g, of the 5050 infant temperature records, only 3% showed a record less than 36 degrees C. Solar powered room heating is effective in maintaining infant temperature and is cost-effective as compared to the existing warming devices.

Structural and Magnetic Properties of Sputter-Deposited Polycrystalline Ni-Mn-Ga Ferromagnetic Shape-Memory Thin Films

NASA Astrophysics Data System (ADS)

Vinodh Kumar, S.; Seenithurai, S.; Manivel Raja, M.; Mahendran, M.

2015-10-01

Polycrystalline Ni-Mn-Ga ferromagnetic shape-memory thin films have been deposited on Si (100) substrates using a direct-current magnetron sputtering technique. The microstructure and the temperature dependence of magnetic properties of the films have been investigated by x-ray diffraction, scanning electron microscopy, and thermomagnetic measurements. As-deposited Ni50.2Mn30.6Ga19.2 film showed quasi-amorphous structure with paramagnetic nature at room temperature. When annealed at 873 K, the quasi-amorphous film attained crystallinity and possessed L21 cubic ordering with high magnetic transition temperature. Saturation magnetization and coercivity values for the annealed film were found to be 220 emu/cm3 and 70 Oe, respectively, indicating soft ferromagnetic character with low magnetocrystalline anisotropy. The magnetic transitions of the film deposited at 100 W were above room temperature, making this a potential candidate for use in microelectromechanical system devices.

Thermal sensation and climate: a comparison of UTCI and PET thresholds in different climates

NASA Astrophysics Data System (ADS)

Pantavou, Katerina; Lykoudis, Spyridon; Nikolopoulou, Marialena; Tsiros, Ioannis X.

2018-06-01

The influence of physiological acclimatization and psychological adaptation on thermal perception is well documented and has revealed the importance of thermal experience and expectation in the evaluation of environmental stimuli. Seasonal patterns of thermal perception have been studied, and calibrated thermal indices' scales have been proposed to obtain meaningful interpretations of thermal sensation indices in different climate regions. The current work attempts to quantify the contribution of climate to the long-term thermal adaptation by examining the relationship between climate normal annual air temperature (1971-2000) and such climate-calibrated thermal indices' assessment scales. The thermal sensation ranges of two thermal indices, the Universal Thermal Climate Index (UTCI) and the Physiological Equivalent Temperature Index (PET), were calibrated for three warm temperate climate contexts (Cfa, Cfb, Csa), against the subjective evaluation of the thermal environment indicated by interviewees during field surveys conducted at seven European cities: Athens (GR), Thessaloniki (GR), Milan (IT), Fribourg (CH), Kassel (DE), Cambridge (UK), and Sheffield (UK), under the same research protocol. Then, calibrated scales for other climate contexts were added from the literature, and the relationship between the respective scales' thresholds and climate normal annual air temperature was examined. To maintain the maximum possible comparability, three methods were applied for the calibration, namely linear, ordinal, and probit regression. The results indicated that the calibrated UTCI and PET thresholds increase with the climate normal annual air temperature of the survey city. To investigate further climates, we also included in the analysis results of previous studies presenting only thresholds for neutral thermal sensation. The average increase of the respective thresholds in the case of neutral thermal sensation was about 0.6 °C for each 1 °C increase of the normal annual air temperature for both indices, statistically significant only for PET though.

Implementation of thermoelectric module for cooling process of microscale experimental room

NASA Astrophysics Data System (ADS)

Gołebiowska, Justyna; Żelazna, Agnieszka; Zioło, Paweł

2017-08-01

Thermoelectric modules, also known as Peltier modules, are used for cooling small devices and also, according to literature, in refrigeration. They can be an alternative to conventional refrigeration systems based on the use of compressors chillers powered by AC power. Peltier modules are powered by direct current (DC), which allows to power them directly supply by photovoltaic modules. In this paper operation of thermoelectric module used for cooling experimental room of cubature 0.125 m3 is presented. The study involves investigation of temperatures achieved on the cold and hot sides of module and inside the experimental room depending on the values of module supplying current. These studies provide an introduction to the assessment of the influence of different methods of heat removal on the hot side of thermoelectric module on cooling efficiency of whole system.

Spatial vulnerability of Australian urban populations to extreme heat events

NASA Astrophysics Data System (ADS)

Loughnan, Margaret; Tapper, Nigel; Phan, Thu; Lynch, Kellie; McInnes, Judith

2013-04-01

Extreme heat events pose a risk to the health of all individuals, especially the elderly and the chronically ill, and are associated with an increased demand for healthcare services. In order to address this problem, policy makers' need information about temperatures above which mortality and morbidity of the exposed population is likely to increase, where the vulnerable groups in the community are located, and how the risks from extreme heat events are likely to change in the future. This study identified threshold temperatures for all Australian capital cities, developed a spatial index of population vulnerability, and used climate model output to predict changes in the number of days exceeding temperature thresholds in the future, as well as changes in risk related to changes in urban density and an ageing population. The study has shown that daily maximum and minimum temperatures from the Bureau of Meteorology forecasts can be used to calculate temperature thresholds for heat alert days. The key risk factors related to adverse health outcomes were found to be areas with intense urban heat islands, areas with higher proportions of older people, and areas with ethnic communities. Maps of spatial vulnerability have been developed to provide information to assist emergency managers, healthcare professionals, and ancillary services develop heatwave preparedness plans at a local scale that target vulnerable groups and address heat-related health risks. The numbers of days exceeding current heat thresholds are predicted to increase over the next 20 to 40 years in all Australian capital cities.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

Compact intra-cavity pumped low-threshold passively Q-switched Ho:Sc2SiO5 laser by a LD-pumped Tm:YAP laser at room temperature

NASA Astrophysics Data System (ADS)

Yang, Xiao-tao; Xie, Wen-qiang; Liu, Long; Li, Lin-jun

2017-08-01

A compact intra-cavity pumped low-threshold passively Q-switched (PQS) Ho:Sc2SiO5 (Ho:SSO) laser is reported for the first time. The Tm:YAlO3 (Tm:YAP) crystal and the Ho:SSO crystal are placed in the same laser cavity. A laser diode with a central wavelength of 793 nm is used to realize the output of the Ho:SSO laser. Both the continuous wave (CW) and PQS operation are investigated. A Cr2+:ZnSe is used as the saturable absorber in the PQS Ho:SSO laser. For the CW mode, the laser threshold is only 750 mW, which is 980 mW in the PQS mode. A maximum pulse energy of 699 µJ is primarily obtained, corresponding to the pulse width of 96 ns. The maximum repetition frequency is 1.46 kHz. The maximum pulse peak power can be calculated to be 7.28 kW. The beam quality factor M 2 is calculated to be 1.4 with the maximum output power.

Weak lasing in one-dimensional polariton superlattices.

PubMed

Zhang, Long; Xie, Wei; Wang, Jian; Poddubny, Alexander; Lu, Jian; Wang, Yinglei; Gu, Jie; Liu, Wenhui; Xu, Dan; Shen, Xuechu; Rubo, Yuri G; Altshuler, Boris L; Kavokin, Alexey V; Chen, Zhanghai

2015-03-31

Bosons with finite lifetime exhibit condensation and lasing when their influx exceeds the lasing threshold determined by the dissipative losses. In general, different one-particle states decay differently, and the bosons are usually assumed to condense in the state with the longest lifetime. Interaction between the bosons partially neglected by such an assumption can smear the lasing threshold into a threshold domain--a stable lasing many-body state exists within certain intervals of the bosonic influxes. This recently described weak lasing regime is formed by the spontaneously symmetry breaking and phase-locking self-organization of bosonic modes, which results in an essentially many-body state with a stable balance between gains and losses. Here we report, to our knowledge, the first observation of the weak lasing phase in a one-dimensional condensate of exciton-polaritons subject to a periodic potential. Real and reciprocal space photoluminescence images demonstrate that the spatial period of the condensate is twice as large as the period of the underlying periodic potential. These experiments are realized at room temperature in a ZnO microwire deposited on a silicon grating. The period doubling takes place at a critical pumping power, whereas at a lower power polariton emission images have the same periodicity as the grating.

Experimental study of transient paths to the extinction in sonoluminescence.

PubMed

Urteaga, Raúl; Dellavale, Damián; Puente, Gabriela F; Bonetto, Fabián J

2008-09-01

An experimental study of the extinction threshold of single bubble sonoluminescence in an air-water system is presented. Different runs from 5% to 100% of air concentrations were performed at room pressure and temperature. The intensity of sonoluminescence (SL) and time of collapse (t(c)) with respect to the driving were measured while the acoustic pressure was linearly increased from the onset of SL until the bubble extinction. The experimental data were compared with theoretical predictions for shape and position instability thresholds. It was found that the extinction of the bubble is determined by different mechanisms depending on the air concentration. For concentrations greater than approximately 30%-40% with respect to the saturation, the parametric instability limits the maximum value of R(0) that can be reached. On the other hand, for lower concentrations, the extinction appears as a limitation in the time of collapse. Two different mechanisms emerge in this range, i.e., the Bjerknes force and the Rayleigh-Taylor instability. The bubble acoustic emission produces backreaction on the bubble itself. This effect occurs in both mechanisms and is essential for the correct prediction of the extinction threshold in the case of low air dissolved concentration.

Use of CFD modelling for analysing air parameters in auditorium halls

NASA Astrophysics Data System (ADS)

Cichowicz, Robert

2017-11-01

Modelling with the use of numerical methods is currently the most popular method of solving scientific as well as engineering problems. Thanks to the use of computer methods it is possible for example to comprehensively describe the conditions in a given room and to determine thermal comfort, which is a complex issue including subjective sensations of the persons in a given room. The article presents the results of measurements and numerical computing that enabled carrying out the assessment of environment parameters, taking into consideration microclimate, temperature comfort, speeds in the zone of human presence and dustiness in auditory halls. For this purpose measurements of temperature, relative humidity and dustiness were made with the use of a digital microclimate meter and a laser dust particles counter. Thanks to the above by using the application DesignBuilder numerical computing was performed and the obtained results enabled determining PMV comfort indicator in selected rooms.

Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers.

PubMed

Abdollahinia, A; Banyoudeh, S; Rippien, A; Schnabel, F; Eyal, O; Cestier, I; Kalifa, I; Mentovich, E; Eisenstein, G; Reithmaier, J P

2018-03-05

Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T 0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T 1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.

Tactical Missile Conceptual Design,

DTIC Science & Technology

1980-09-01

Temperature ..... ........... 110 a. Example I .... ................. 111 6 Page b. Example II ... ............... .. 112 6. Simple IR System...meet a current threat. An example of this might be an advance in material science, which allows higher inlet turbine temperatures for a turbojet...Pmin = k TO B n N 0)min Boltzmans constant is k = 1.38 x 10- 2 3 joule/ k. The value of kT0 at room temperature is 4 x 10 - 21 watt/cps of bandwidth

Assessment of the RNASound RNA Sampling Card for the Preservation of Influenza Virus RNA

PubMed Central

Lau, Hilda; Hurt, Aeron C.

2016-01-01

Shipping influenza virus specimens, isolates or purified RNA is normally conducted at ultra-low temperatures using dry ice to ensure minimal degradation of the samples but this is expensive and requires special packaging and shipping conditions. Therefore, alternative methods for shipping influenza viruses or RNA at ambient temperatures would be desirable. The RNASound RNA Sampling Card (FortiusBio LLC, San Diego, CA, USA) is a device that enables specimens or isolates to be applied to a card, whereby viruses are inactivated, while RNA is preserved and purified RNA can also easily be eluted. To evaluate this card, we applied influenza virus cell culture isolate supernatants to either the RNASound card or Whatman Grade No. 1 filter paper (GE Healthcare, Rydalmere, NSW, Australia) and compared the preservation to that of material stored in liquid form. Preservation was tested using influenza A and B viruses at two different storage temperatures [cool (2–8°C) or room temperature (18–22°C)] and these were compared with control material stored at -80°C, for 7, 14, or 28 days. The quality of the RNA recovered was assessed using real time RT-PCR and Sanger sequencing. The RNASound card was effective in preserving influenza RNA at room temperature for up to 28 days, with only a minor change in real-time RT-PCR cycle threshold values for selected gene targets when comparing between viruses applied to the card or stored at -80°C. Similar results were obtained with filter paper, whilst virus in liquid form performed the worst. Nevertheless, as the RNASound card also has the capability to inactivate viruses in addition to preserving RNA at room temperature for many weeks, this makes it feasible to send samples to laboratories using regular mail, and thus avoid the need for expensive shipping conditions requiring biohazard containers and dry ice. Moreover, the quick and simple RNA recovery from the RNASound card allows recipient labs to obtain RNA without the need for special reagents or equipment. PMID:27853455

Evaluation of Two Matrices for Long-Term, Ambient Storage of Bacterial DNA.

PubMed

Miernyk, Karen M; DeByle, Carolynn K; Rudolph, Karen M

2017-12-01

Culture-independent molecular analyses allow researchers to identify diverse microorganisms. This approach requires microbiological DNA repositories. The standard for DNA storage is liquid nitrogen or ultralow freezers. These use large amounts of space, are costly to operate, and could fail. Room temperature DNA storage is a viable alternative. In this study, we investigated storage of bacterial DNA using two ambient storage matrices, Biomatrica DNAstable ® Plus and GenTegra ® DNA. We created crude and clean DNA extracts from five Streptococcus pneumoniae isolates. Extracts were stored at -30°C (our usual DNA storage temperature), 25°C (within the range of temperatures recommended for the products), and 50°C (to simulate longer storage time). Samples were stored at -30°C with no product and dried at 25°C and 50°C with no product, in Biomatrica DNAstable Plus or GenTegra DNA. We analyzed the samples after 0, 1, 2, 4, 8, 16, 32, and 64 weeks using the Nanodrop 1000 to determine the amount of DNA in each aliquot and by real-time PCR for the S. pneumoniae genes lytA and psaA. Using a 50°C storage temperature, we simulated 362 weeks of 25°C storage. The average amount of DNA in aliquots stored with a stabilizing matrix was 103%-116% of the original amount added to the tubes. This is similar to samples stored at -30°C (average 102%-121%). With one exception, samples stored with a stabilizing matrix had no change in lytA or psaA cycle threshold (Ct) value over time (Ct range ≤2.9), similar to samples stored at -30°C (Ct range ≤3.0). Samples stored at 25°C with no stabilizing matrix had Ct ranges of 2.2-5.1. DNAstable Plus and GenTegra DNA can protect dried bacterial DNA samples stored at room temperature with similar effectiveness as at -30°C. It is not effective to store bacterial DNA at room temperature without a stabilizing matrix.

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Babichev, A. V.; Karachinsky, L. Ya.

2015-11-15

The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy technique. Despite the relatively short laser cavity length and high level of external loss the laser shows the lasing in the temperature range of 80–220 K. The threshold current density below 4 kA/cm{sup 2} at 220 K with the characteristic temperature T{sub 0} = 123 K was demonstrated.

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Spin-Induced Polarizations and Nonreciprocal Directional Dichroism of the Room-Temperature Multiferroic BiFeO 3

DOE PAGES

Fishman, Randy Scott; Lee, Jun Hee; Bordacs, Sandor; ...

2015-09-14

A microscopic model for the room-temperature multiferroic BiFeO 3 that includes two Dzyaloshinskii-Moriya interactions and single-ion anisotropy along the ferroelectric polarization predicts both the zero-field spectroscopic modes as well as their splitting and evolution in a magnetic field. Due to simultaneously broken time-reversal and spatial-inversion symmetries, the absorption of light changes as the magnetic field or the direction of light propagation is reversed. We discuss three physical mechanisms that may contribute to this absorption asymmetry known as directional dichroism: the spin current, magnetostriction, and single-ion anisotropy. We conclude that the directional dichroism in BiFeO 3 is dominated by the spin-currentmore » polarization and is insensitive to the magnetostriction and easy-axis anisotropy. With three independent spin-current parameters, our model accurately describes the directional dichroism observed for magnetic field along [1, -1, 0]. Since some modes are almost transparent to light traveling in one direction but opaque for light traveling in the opposite direction, BiFeO 3 can be used as a room-temperature optical diode at certain frequencies in the GHz to THz range. This work demonstrates that an analysis of the directional dichroism spectra based on an effective spin model supplemented by first-principles calculations can produce a quantitative microscopic theory of the magnetoelectric couplings in multiferroic materials.« less

Single molecule dynamics at a mechanically controllable break junction in solution at room temperature.

PubMed

Konishi, Tatsuya; Kiguchi, Manabu; Takase, Mai; Nagasawa, Fumika; Nabika, Hideki; Ikeda, Katsuyoshi; Uosaki, Kohei; Ueno, Kosei; Misawa, Hiroaki; Murakoshi, Kei

2013-01-23

The in situ observation of geometrical and electronic structural dynamics of a single molecule junction is critically important in order to further progress in molecular electronics. Observations of single molecular junctions are difficult, however, because of sensitivity limits. Here, we report surface-enhanced Raman scattering (SERS) of a single 4,4'-bipyridine molecule under conditions of in situ current flow in a nanogap, by using nano-fabricated, mechanically controllable break junction (MCBJ) electrodes. When adsorbed at room temperature on metal nanoelectrodes in solution to form a single molecule junction, statistical analysis showed that nontotally symmetric b(1) and b(2) modes of 4,4'-bipyridine were strongly enhanced relative to observations of the same modes in solid or aqueous solutions. Significant changes in SERS intensity, energy (wavenumber), and selectivity of Raman vibrational bands that are coincident with current fluctuations provide information on distinct states of electronic and geometrical structure of the single molecule junction, even under large thermal fluctuations occurring at room temperature. We observed the dynamics of 4,4'-bipyridine motion between vertical and tilting configurations in the Au nanogap via b(1) and b(2) mode switching. A slight increase in the tilting angle of the molecule was also observed by noting the increase in the energies of Raman modes and the decrease in conductance of the molecular junction.

Octave-Band Thresholds for Modeled Reverberant Fields

NASA Technical Reports Server (NTRS)

Begault, Durand R.; Wenzel, Elizabeth M.; Tran, Laura L.; Anderson, Mark R.; Trejo, Leonard J. (Technical Monitor)

1998-01-01

Auditory thresholds for 10 subjects were obtained for speech stimuli reverberation. The reverberation was produced and manipulated by 3-D audio modeling based on an actual room. The independent variables were octave-band-filtering (bypassed, 0.25 - 2.0 kHz Fc) and reverberation time (0.2- 1.1 sec). An ANOVA revealed significant effects (threshold range: -19 to -35 dB re 60 dB SRL).

Room-temperature spin-orbit torque in NiMnSb

NASA Astrophysics Data System (ADS)

Ciccarelli, C.; Anderson, L.; Tshitoyan, V.; Ferguson, A. J.; Gerhard, F.; Gould, C.; Molenkamp, L. W.; Gayles, J.; Železný, J.; Šmejkal, L.; Yuan, Z.; Sinova, J.; Freimuth, F.; Jungwirth, T.

2016-09-01

Materials that crystallize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simultaneously, inversion asymmetries in their crystal structure and relativistic spin-orbit coupling led to discoveries of non-equilibrium spin-polarization phenomena that are now extensively explored as an electrical means for manipulating magnetic moments in a variety of spintronic structures. Current research of these relativistic spin-orbit torques focuses primarily on magnetic transition-metal multilayers. The low-temperature diluted magnetic semiconductor (Ga, Mn)As, in which spin-orbit torques were initially discovered, has so far remained the only example showing the phenomenon among bulk non-centrosymmetric ferromagnets. Here we present a general framework, based on the complete set of crystallographic point groups, for identifying the potential presence and symmetry of spin-orbit torques in non-centrosymmetric crystals. Among the candidate room-temperature ferromagnets we chose to use NiMnSb, which is a member of the broad family of magnetic Heusler compounds. By performing all-electrical ferromagnetic resonance measurements in single-crystal epilayers of NiMnSb we detect room-temperature spin-orbit torques generated by effective fields of the expected symmetry and of a magnitude consistent with our ab initio calculations.

Theoretical study of the characteristics of a continuous wave iron-doped ZnSe laser

NASA Astrophysics Data System (ADS)

Pan, Qikun; Chen, Fei; Xie, Jijiang; Wang, Chunrui; He, Yang; Yu, Deyang; Zhang, Kuo

2018-03-01

A theoretical model describing the dynamic process of a continuous-wave Fe2+:ZnSe laser is presented. The influence of some of the operating parameters on the output characteristics of an Fe2+:ZnSe laser is studied in detail. The results indicate that the temperature rise of the Fe2+:ZnSe crystal is significant with the use of a high power pump laser, especially for a high doped concentration of crystal. The optimal crystal length increases with decreasing the doped concentration of crystal, so an Fe2+:ZnSe crystal with simultaneous doping during growth is an attractive choice, which usually has a low doped concentration and long length. The laser pumping threshold is almost stable at low temperatures, but increases exponentially with a working temperature in the range of 180 K to room temperature. The main reason for this phenomenon is the short upper level lifetime and serious thermal temperature rise when the working temperature is higher than 180 K. The calculated optimum output mirror transmittance is about 35% and the performance of a continuous-wave Fe2+:ZnSe laser is more efficient at a lower operating temperature.

Assessing the prospects for achieving double-shell ignition on the National Ignition Facility using vacuum hohlraums

NASA Astrophysics Data System (ADS)

Amendt, Peter

2006-10-01

The goal of demonstrating ignition on the National Ignition Facility (NIF) has motivated a revisit of double-shell (DS) [1] targets as a complementary path to the baseline cryogenic single-shell approach [2]. Benefits of DS targets include room-temperature deuterium-tritium (DT) fuel preparation, minimal hohlraum-plasma-mediated laser backscatter, low threshold-ignition temperatures (4 keV) for relaxed hohlraum x-ray flux asymmetry tolerances [3], and loose shock timing requirements. On the other hand, DS ignition presents several challenges, including room-temperature containment of high-pressure DT (790 atm) in the inner shell; strict concentricity requirements on the two shells; development of nanoporous, low-density, metallic foams for structural support of the inner shell and hydrodynamic instability mitigation; and effective control of perturbation growth on the high-Atwood number interface between the DT fuel and the high-Z inner shell. Recent progress in DS ignition target designs using vacuum hohlraums is described, offering the potential for low levels of laser backscatter from stimulated Raman and Brillouin processes. In addition, vacuum hohlraums have the operational advantages of room temperature fielding and fabrication simplicity, as well as benefiting from extensive benchmarking on the Nova and Omega laser facilities. As an alternative to standard cylindrical hohlraums, a rugby-shaped geometry is also introduced that may provide energetics and symmetry tuning benefits for more robust DS designs with yields exceeding 10 MJ for 2 MJ of 3w laser energy. The recent progress in hohlraum designs and required advanced materials development are scheduled to culminate in a prototype demonstration of a NIF-scale ignition-ready DS in 2007. [1] P. Amendt et al., PoP 9, 2221 (2002). [2] J.D. Lindl et al., PoP 11, 339 (2004). [3] M.N. Chizhkov et al., Laser Part. Beams 23, 261 (2005). In collaboration with C. Cerjan, A. Hamza, J. Milovich and H. Robey.

Probing anode degradation in automotive Li-ion batteries

NASA Astrophysics Data System (ADS)

Kwon, Ou Jung

The lithium-ion battery is drawing attention as a power source for future clean and fuel-efficient vehicles. Although the Li-ion battery presently shows best performance for energy density and power density compared to other rechargeable batteries, some degradation problems still remain as key challenges for long-term durability in automotive applications. Among those problems, Li deposition is well known for causing permanent capacity loss. Fundamental mechanisms of Li deposition in the carbon anode are, however, not fully understood, especially at subzero temperature and/or under high rate charge. This dissertation introduces comprehensive study of Li deposition using automotive 18650 Li-ion cells. The mechanism and relevant diagnostic methods as well as preventive charging protocol are discussed. In part one, a new diagnostic tool is introduced utilizing 3-electrode cell system, which measures thermodynamic and kinetic parameters of cathode and anode, respectively, as a function of temperature and SOC (state of charge): open circuit potential (OCP); Li diffusion coefficient in active particles; and internal resistance. These data are employed to understand electrochemical reaction and its thermal interaction under charging conditions that result in Li deposition. Part two provides a threshold parameter for the onset of Li deposition, which is not commonly used anode potential but charge capacity, or more specifically the amount of Li+ ions participating in intercalation reaction without Li deposition at given charging circumstances. This is called the critical charge capacity in this thesis, beyond which capacity loss at normal operating condition is observed, which becomes more serious as temperature is lowered and/or charge C-rate increases. Based on these experimental results, the mechanism of Li deposition is proposed as the concept of anode particle surface saturation, meaning that once the anode particle surface is saturated with Li in any charging circumstances, no more Li+ ions can be intercalated but should be reduced to metallic form on the anode particle surface. This is validated by calculating the distribution of Li concentration inside the anode particle with electrochemical modeling. In part three, a novel pulse charge protocol is developed, which consists of two steps. First high current charge/discharge pulses increase the cell temperature from a subzero temperature up to above room temperature in a short time, and next, high current charge provides the net charge capacity. Sluggish Li diffusion at low temperature becomes fast thanks to cell temperature elevation by high current pulses (1st step), which plays a role of preventing surface saturation during high current charge (2nd step). Thus, this charge protocol is not only Li deposition-free but also leads to rapid charge at subzero temperatures.

Method to improve reliability of a fuel cell system using low performance cell detection at low power operation

DOEpatents

Choi, Tayoung; Ganapathy, Sriram; Jung, Jaehak; Savage, David R.; Lakshmanan, Balasubramanian; Vecasey, Pamela M.

2013-04-16

A system and method for detecting a low performing cell in a fuel cell stack using measured cell voltages. The method includes determining that the fuel cell stack is running, the stack coolant temperature is above a certain temperature and the stack current density is within a relatively low power range. The method further includes calculating the average cell voltage, and determining whether the difference between the average cell voltage and the minimum cell voltage is greater than a predetermined threshold. If the difference between the average cell voltage and the minimum cell voltage is greater than the predetermined threshold and the minimum cell voltage is less than another predetermined threshold, then the method increments a low performing cell timer. A ratio of the low performing cell timer and a system run timer is calculated to identify a low performing cell.

Development of a method for the determination of 9 currently used cotton pesticides by gas chromatography with electron capture detection.

PubMed

Zhang, Baohong; Pan, Xiaoping; Venne, Louise; Dunnum, Suzy; McMurry, Scott T; Cobb, George P; Anderson, Todd A

2008-05-30

A reliable, sensitive, and reproducible method was developed for quantitative determination of nine new generation pesticides currently used in cotton agriculture. Injector temperature significantly affected analyte response as indicated by electron capture detector (ECD) chromatograms. A majority of the analytes had an enhanced response at injector temperatures between 240 and 260 degrees C, especially analytes such as acephate that overall had a poor response on the ECD. The method detection limits (MDLs) were 0.13, 0.05, 0.29, 0.35, 0.08, 0.10, 0.32, 0.05, and 0.59 ng/mL for acephate, trifuralin, malathion, thiamethozam, pendimethalin, DEF6, acetamiprid, brifenthrin, and lambda-cyhalothrin. This study provides a precision (0.17-13.1%), accuracy (recoveries=88-107%) and good reproducible method for the analytes of interest. At relatively high concentrations, only lambda-cyhalothrin was unstable at room temperature (20-25 degrees C) and 4 degrees C over 10 days. At relatively low concentrations, acephate and acetamiprid were also unstable regardless of temperature. After 10 days storage at room temperature, 30-40% degradation of lambda-cyhalothrin was observed. It is recommended that acephate, acetamiprid, and lambda-cyhalothrin be stored at -20 degrees C or analyzed immediately after extraction.

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

NASA Astrophysics Data System (ADS)

Yoshioka, Hironori; Hirata, Kazuto

2018-04-01

The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14-350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm-2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V-1s-1 and was almost independent of temperature.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Electric modulation of conduction in multiferroic Ni-doped GaFeO3 ceramics

NASA Astrophysics Data System (ADS)

Ghani, Awais; Yang, Sen; Rajput, S. S.; Ahmed, S.; Murtaza, Adil; Zhou, Chao; Yu, Zhonghai; Zhang, Yin; Song, Xiaoping; Ren, Xiaobing

2018-06-01

In this work, the effects of Ni substitution on the electrical leakage and multiferroic properties of GaFeO3 were examined. Structural analysis of grown ceramics using x-ray diffraction and Raman shows that all ceramics have pure phases with an orthorhombic structure and space group. Ni substitutions slightly modify lattice parameters and induce lattice distortion within the same crystalline structure. It is observed that with increasing Ni-content up to 0.10, the magnetic transition temperature () increases from 196 K to 407 K. Ni-doped samples showed better ferroelectric properties and a drastic reduction in leakage current (~three orders of magnitude) at room temperature. Enhanced characteristics behavior is observed for 10% Ni substitution (GaFe0.9Ni0.1O3) and higher substitution leads to deterioration of properties with a larger leakage current. It is proposed that the role of Ni substitution can reduce hopping between Fe+3 and Fe+2 as well as suppressing the oxygen vacancies. This work would open new possibilities for integrating polycrystalline GaFeO3 at room temperature for magnetoelectric applications.

Manufacture of pooled platelets in additive solution and storage in an ELX container after an overnight warm temperature hold of platelet-rich plasma.

PubMed

Alhumaidan, Hiba; Cheves, Tracey; Holme, Stein; Sweeney, Joseph D

2011-10-01

The processing of whole blood-derived platelet-rich plasma (PRP) to a platelet concentrate and platelet-poor plasma is currently performed within 8 hours to comply with the requirements to manufacture fresh frozen plasma. Maintaining PRP at room temperature for a longer period can have the advantage of shifting the completion of component manufacture onto day shifts. Pairs of ABO-identical prepooled platelets were manufactured by the PRP method, using the current approach with platelet storage in a CLX HP container (Pall Medical, Covina, CA) and plasma, or a novel approach with an 18- to a 24-hour room temperature hold of the PRP and the manufacture of pooled platelets in a glucose-containing additive solution (AS) and storage in a new ELX container (Pall Medical). Standard in vitro assays were performed on days 2, 5, and 7. The results showed that the AS platelets in ELX have in vitro characteristics that are equivalent or superior to those of the standard product.

Charge carrier recombination channels in the low-temperature phase of organic-inorganic lead halide perovskite thin films

NASA Astrophysics Data System (ADS)

Wehrenfennig, Christian; Liu, Mingzhen; Snaith, Henry J.; Johnston, Michael B.; Herz, Laura M.

2014-08-01

The optoelectronic properties of the mixed hybrid lead halide perovskite CH3NH3PbI3-xClx have been subject to numerous recent studies related to its extraordinary capabilities as an absorber material in thin film solar cells. While the greatest part of the current research concentrates on the behavior of the perovskite at room temperature, the observed influence of phonon-coupling and excitonic effects on charge carrier dynamics suggests that low-temperature phenomena can give valuable additional insights into the underlying physics. Here, we present a temperature-dependent study of optical absorption and photoluminescence (PL) emission of vapor-deposited CH3NH3PbI3-xClx exploring the nature of recombination channels in the room- and the low-temperature phase of the material. On cooling, we identify an up-shift of the absorption onset by about 0.1 eV at about 100 K, which is likely to correspond to the known tetragonal-to-orthorhombic transition of the pure halide CH3NH3PbI3. With further decreasing temperature, a second PL emission peak emerges in addition to the peak from the room-temperature phase. The transition on heating is found to occur at about 140 K, i.e., revealing significant hysteresis in the system. While PL decay lifetimes are found to be independent of temperature above the transition, significantly accelerated recombination is observed in the low-temperature phase. Our data suggest that small inclusions of domains adopting the room-temperature phase are responsible for this behavior rather than a spontaneous increase in the intrinsic rate constants. These observations show that even sparse lower-energy sites can have a strong impact on material performance, acting as charge recombination centres that may detrimentally affect photovoltaic performance but that may also prove useful for optoelectronic applications such as lasing by enhancing population inversion.

Advanced p-MOSFET Ionizing-Radiation Dosimeter

NASA Technical Reports Server (NTRS)

Buehler, Martin G.; Blaes, Brent R.

1994-01-01

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Real-time modeling of heat distributions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamann, Hendrik F.; Li, Hongfei; Yarlanki, Srinivas

Techniques for real-time modeling temperature distributions based on streaming sensor data are provided. In one aspect, a method for creating a three-dimensional temperature distribution model for a room having a floor and a ceiling is provided. The method includes the following steps. A ceiling temperature distribution in the room is determined. A floor temperature distribution in the room is determined. An interpolation between the ceiling temperature distribution and the floor temperature distribution is used to obtain the three-dimensional temperature distribution model for the room.

Porous aluminum room temperature anodizing process in a fluorinated-oxalic acid solution

NASA Astrophysics Data System (ADS)

Dhahri, S.; Fazio, E.; Barreca, F.; Neri, F.; Ezzaouia, H.

2016-08-01

Anodizing of aluminum is used for producing porous insulating films suitable for different applications in electronics and microelectronics. Porous-type aluminum films are most simply realized by galvanostatic anodizing in aqueous acidic solutions. The improvement in application of anodizing technique is associated with a substantial reduction of the anodizing voltage at appropriate current densities as well as to the possibility to carry out the synthesis process at room temperature in order to obtain a self-planarizing dielectric material incorporated in array of super-narrow metal lines. In this work, the anodizing of aluminum to obtain porous oxide was carried out, at room temperature, on three different substrates (glass, stainless steel and aluminum), using an oxalic acid-based electrolyte with the addition of a relatively low amount of 0.4 % of HF. Different surface morphologies, from nearly spherical to larger porous nanostructures with smooth edges, were observed by means of scanning electron microscopy. These evidences are explained by considering the formation, transport and adsorption of the fluorine species which react with the Al3+ ions. The behavior is also influenced by the nature of the original substrate.

Reversible calcium alloying enables a practical room-temperature rechargeable calcium-ion battery with a high discharge voltage

NASA Astrophysics Data System (ADS)

Wang, Meng; Jiang, Chunlei; Zhang, Songquan; Song, Xiaohe; Tang, Yongbing; Cheng, Hui-Ming

2018-06-01

Calcium-ion batteries (CIBs) are attractive candidates for energy storage because Ca2+ has low polarization and a reduction potential (-2.87 V versus standard hydrogen electrode, SHE) close to that of Li+ (-3.04 V versus SHE), promising a wide voltage window for a full battery. However, their development is limited by difficulties such as the lack of proper cathode/anode materials for reversible Ca2+ intercalation/de-intercalation, low working voltages (<2 V), low cycling stability, and especially poor room-temperature performance. Here, we report a CIB that can work stably at room temperature in a new cell configuration using graphite as the cathode and tin foils as the anode as well as the current collector. This CIB operates on a highly reversible electrochemical reaction that combines hexafluorophosphate intercalation/de-intercalation at the cathode and a Ca-involved alloying/de-alloying reaction at the anode. An optimized CIB exhibits a working voltage of up to 4.45 V with capacity retention of 95% after 350 cycles.

Laterally biased structures for room temperature operation of quantum-well infrared photodetectors

NASA Astrophysics Data System (ADS)

Guzmán, Álvaro; Gargallo-Caballero, Raquel; Lü, Xiang; Grahn, Holger T.

2017-11-01

Laterally biased quantum-well infrared photodetectors (LBQWIPs) are expected to exhibit a photoresponse at room temperature. In these devices, the photocurrent is collected by means of two lateral Ohmic contacts on each side of an undoped quantum well (QW), which is coupled by tunneling to another n-doped QW. Photoexcited electrons from the n-doped QW tunnel through to the undoped QW and are swept out via a lateral bias voltage. Up to now, the practical development of these structures has not been yet achieved due to the difficulty of contacting single QWs separated by a few nanometers. In this paper, we report on a viable technology to fabricate LBQWIPs. We present two procedures to contact individual QWs, which are sufficiently close to be coupled by tunneling. The final devices exhibit very low dark-current values and clear infrared absorption peaks at 300 K, in good agreement with the results of numerical simulations. This work demonstrates the practical functionality of the laterally biased structure and paves the way for future developments of room temperature QWIPs.

The influence of room temperature on Mg isotope measurements by MC-ICP-MS.

PubMed

Zhang, Xing-Chao; Zhang, An-Yu; Zhang, Zhao-Feng; Huang, Fang; Yu, Hui-Min

2018-03-24

We observed that the accuracy and precision of magnesium (Mg) isotope analyses could be affected if the room temperature oscillated during measurements. To achieve high quality Mg isotopic data, it is critical to evaluate how the unstable room temperature affects Mg isotope measurements by multi-collector inductively coupled plasma mass spectrometry (MC-ICP-MS). We measured the Mg isotopes for the reference material DSM-3 using MC-ICP-MS under oscillating room temperatures in spring. For a comparison, we also measured the Mg isotopes under stable room temperatures, which was achieved by the installation of an improved temperature control system in the laboratory. The δ 26 Mg values measured under oscillating room temperatures have a larger deviation (δ 26 Mg from -0.09 to 0.08‰, with average δ 26 Mg = 0.00 ± 0.08 ‰) than those measured under a stable room temperature (δ 26 Mg from -0.03 to 0.03‰, with average δ 26 Mg = 0.00 ± 0.02 ‰) using the same MC-ICP-MS system. The room temperature variation can influence the stability of MC-ICP-MS. Therefore, it is critical to keep the room temperature stable to acquire high precise and accurate isotopic data when using MC-ICP-MS, especially when using the sample-standard bracketing (SSB) correction method. This article is protected by copyright. All rights reserved.

Transport Properties of LiTFSI-Acetamide Room Temperature Molten Salt Electrolytes Applied in an Li-Ion Battery

NASA Astrophysics Data System (ADS)

Yang, Chao-Chen; Hsu, Hsin-Yi; Hsu, Chen-Ruei

2007-11-01

In the present work some transport properties of the binary room temperature molten salt (RTMS) lithium bis(trifluoromethane sulfone)imide (LiTFSI)-acetamide [LiN(SO2CF3)2-CH3CONH2], applied in an Li-ion battery, have been investigated. The phase diagram was determined by differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The result reveals that the binary RTMS has an eutectic point at 201 K and the 30 mol% LiTFSI composition. The electric conductivity was measured using a direct current computerized method. The result shows that the conductivities of the melts increase with increasing temperature and acetamide content. The densities of all melts decrease with increasing temperature and acetamide content. The equivalent conductivities were fitted by the Arrhenius equation, where the activation energies were 18.15, 18.52, 20.35, 25.08 kJ/mol for 10, 20, 30, 40 mol% LiTFSI, respectively. Besides the relationships between conductivity, density composition and temperature, of the ion interaction is discussed.

Optimization of the highly strained InGaAs/GaAs quantum well lasers grown by MOVPE

NASA Astrophysics Data System (ADS)

Su, Y. K.; Chen, W. C.; Wan, C. T.; Yu, H. C.; Chuang, R. W.; Tsai, M. C.; Cheng, K. Y.; Hu, C.; Tsau, Seth

2008-07-01

In this article, we study the highly compressive-strained InGaAs/GaAs quantum wells and the broad-area lasers grown by MOVPE. Several epitaxial parameters were optimized, including the growth temperature, pressure and group V to group III (V/III) ratio. Grown with the optimized epitaxial parameters, the highly strained In 0.39Ga 0.61As/GaAs lasers could be continuously operated at 1.22 μm and their threshold current density Jth was 140 A/cm 2. To the best of our knowledge, the demonstrated InGaAs QW laser has the lowest threshold current per quantum well (Jth/QW) of 46.7 A/cm 2. The fitted characteristic temperature ( T0) was 146.2 K, indicating the good electron confinement ability. Furthermore, by lowering the growth temperature down to 475 °C and the TBAs/III ratio to 5, the emission wavelength of the In 0.42Ga 0.58As/GaAs quantum wells was as long as 1245 nm and FWHM was 43 meV.

Wind-driven roof turbines: a novel way to improve ventilation for TB infection control in health facilities.

PubMed

Cox, Helen; Escombe, Rod; McDermid, Cheryl; Mtshemla, Yolanda; Spelman, Tim; Azevedo, Virginia; London, Leslie

2012-01-01

Tuberculosis transmission in healthcare facilities contributes significantly to the TB epidemic, particularly in high HIV settings. Although improving ventilation may reduce transmission, there is a lack of evidence to support low-cost practical interventions. We assessed the efficacy of wind-driven roof turbines to achieve recommended ventilation rates, compared to current recommended practices for natural ventilation (opening windows), in primary care clinic rooms in Khayelitsha, South Africa. Room ventilation was assessed (CO₂ gas tracer technique) in 4 rooms where roof turbines and air-intake grates were installed, across three scenarios: turbine, grate and window closed, only window open, and only turbine and grate open, with concurrent wind speed measurement. 332 measurements were conducted over 24 months. For all 4 rooms combined, median air changes per hour (ACH) increased with wind speed quartiles across all scenarios. Higher median ACH were recorded with open roof turbines and grates, compared to open windows across all wind speed quartiles. Ventilation with open turbine and grate exceeded WHO-recommended levels (60 Litres/second/patient) for 95% or more of measurements in 3 of the 4 rooms; 47% in the remaining room, where wind speeds were lower and a smaller diameter turbine was installed. High room ventilation rates, meeting recommended thresholds, may be achieved using wind-driven roof turbines and grates, even at low wind speeds. Roof turbines and air-intake grates are not easily closed by staff, allowing continued ventilation through colder periods. This simple, low-cost technology represents an important addition to our tools for TB infection control.