Purity of targets prepared on Cu substrates

NASA Astrophysics Data System (ADS)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures.

PubMed

Zhang, S; Nordlund, K; Djurabekova, F; Zhang, Y; Velisa, G; Wang, T S

2016-10-01

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop here a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms, Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures

NASA Astrophysics Data System (ADS)

Zhang, S.; Nordlund, K.; Djurabekova, F.; Zhang, Y.; Velisa, G.; Wang, T. S.

2016-10-01

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop here a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms, Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.

The study of voids in the AuAl thin-film system using the nuclear microprobe

NASA Astrophysics Data System (ADS)

de Waal, H. S.; Pretorius, R.; Prozesky, V. M.; Churms, C. L.

1997-07-01

A Nuclear Microprobe (NMP) was used to study void formation in thin film gold-aluminium systems. Microprobe Rutherford Backscattering Spectrometry (μRBS) was utilised to effectively obtain a three-dimensional picture of the void structure on the scale of a few nanometers in the depth dimension and a few microns in the in-plane dimension. This study illustrates the usefulness of the NMP in the study of materials and specifically thin-film structures.

Nondestructive atomic compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques

NASA Astrophysics Data System (ADS)

Zolnai, Z.; Toporkov, M.; Volk, J.; Demchenko, D. O.; Okur, S.; Szabó, Z.; Özgür, Ü.; Morkoç, H.; Avrutin, V.; Kótai, E.

2015-02-01

The atomic composition with less than 1-2 atom% uncertainty was measured in ternary BeZnO and quaternary BeMgZnO alloys using a combination of nondestructive Rutherford backscattering spectrometry with 1 MeV He+ analyzing ion beam and non-Rutherford elastic backscattering experiments with 2.53 MeV energy protons. An enhancement factor of 60 in the cross-section of Be for protons has been achieved to monitor Be atomic concentrations. Usually the quantitative analysis of BeZnO and BeMgZnO systems is challenging due to difficulties with appropriate experimental tools for the detection of the light Be element with satisfactory accuracy. As it is shown, our applied ion beam technique, supported with the detailed simulation of ion stopping, backscattering, and detection processes allows of quantitative depth profiling and compositional analysis of wurtzite BeZnO/ZnO/sapphire and BeMgZnO/ZnO/sapphire layer structures with low uncertainty for both Be and Mg. In addition, the excitonic bandgaps of the layers were deduced from optical transmittance measurements. To augment the measured compositions and bandgaps of BeO and MgO co-alloyed ZnO layers, hybrid density functional bandgap calculations were performed with varying the Be and Mg contents. The theoretical vs. experimental bandgaps show linear correlation in the entire bandgap range studied from 3.26 eV to 4.62 eV. The analytical method employed should help facilitate bandgap engineering for potential applications, such as solar blind UV photodetectors and heterostructures for UV emitters and intersubband devices.

Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

NASA Astrophysics Data System (ADS)

Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

In-situ determination of energy species yields of intense particle beams

DOEpatents

Kugel, H.W.; Kaita, R.

1983-09-26

Objects of the present invention are provided for a particle beam having a full energy component at least as great as 25 keV, which is directed onto a beamstop target, such that Rutherford backscattering, preferably near-surface backscattering occurs. The geometry, material composition and impurity concentration of the beam stop are predetermined, using any suitable conventional technique. The energy-yield characteristic response of backscattered particles is measured over a range of angles using a fast ion electrostatic analyzer having a microchannel plate array at its focal plane. The knee of the resulting yield curve, on a plot of yield versus energy, is analyzed to determine the energy species components of various beam particles having the same mass.

Simulation of Rutherford backscattering spectrometry from arbitrary atom structures

DOE PAGES

Zhang, S.; Univ. of Helsinki; Nordlund, Kai; ...

2016-10-25

Rutherford backscattering spectrometry in a channeling direction (RBS/C) is a powerful tool for analysis of the fraction of atoms displaced from their lattice positions. However, it is in many cases not straightforward to analyze what is the actual defect structure underlying the RBS/C signal. To reveal insights of RBS/C signals from arbitrarily complex defective atomic structures, we develop in this paper a method for simulating the RBS/C spectrum from a set of arbitrary read-in atom coordinates (obtained, e.g., from molecular dynamics simulations). We apply the developed method to simulate the RBS/C signals from Ni crystal structures containing randomly displaced atoms,more » Frenkel point defects, and extended defects, respectively. The RBS/C simulations show that, even for the same number of atoms in defects, the RBS/C signal is much stronger for the extended defects. Finally, comparison with experimental results shows that the disorder profile obtained from RBS/C signals in ion-irradiated Ni is due to a small fraction of extended defects rather than a large number of individual random atoms.« less

Influence of surface topography on RBS measurements: case studies of (Cu/Fe/Pd) multilayers and FePdCu alloys nanopatterned by self-assembly

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Zabila, Y.; Zarzycki, A.; Marszałek, M.

2017-03-01

In this paper the influence of surface topography on Rutherford backscattering spectrometry (RBS) is discussed. (Cu/Fe/Pd) multilayers with total thickness of about 10 nm were deposited by physical vapor deposition on self-organized array of SiO2 nanoparticles with the size of 50 nm and 100 nm. As a reference, the multilayered systems were also prepared on flat substrates under the same conditions. After the deposition, morphology of the systems was studied by scanning electron microscopy (SEM), while chemical analysis was performed using Rutherford backscattering spectrometry. It was found that the RBS spectra and determined compositions for flat and patterned multilayers differ. The difference is discussed by taking into account the effect of additional inelastic scattering and energy straggling occurring due to developed topography of patterned systems. Then, the multilayers were annealed in 600 °C in order to obtain FePdCu alloy. The phenomenon of solid-state dewetting resulted in the formation of isolated alloy islands on the top of SiO2 nanoparticles. The SEM and RBS analysis were repeated showing correlation between the size distribution of obtained alloy islands and broadening of peaks appearing in RBS spectra. Invited talk at 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), 8-12 November 2016, Ha Long City, Vietnam.

Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy

DTIC Science & Technology

2002-01-01

can significantly change the electric behavior. Techniques like Positron Annihilation Spectroscopy [5,6] and Rutherford Backscattering/Channeling... Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001. To order the complete compilation... Spectroscopy DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the following report: TITLE: Progress in

Nanoscale interfacial mixing of Au/Bi layers using MeV ion beams

NASA Astrophysics Data System (ADS)

Prusty, Sudakshina; Siva, V.; Ojha, S.; Kabiraj, D.; Sahoo, P. K.

2017-05-01

We have studied nanoscale mixing of thermally deposited double bilayer films of Au/Bi after irradiating them by 1.5 MeV Au2+ ions. Post irradiation effects on the morphology and elemental identification in these films are studied by Scanning electron microscopy (SEM) and Energy dispersive X-ray spectroscopy (EDS). Glancing angle X-ray diffraction (GAXRD) of the samples indicate marginal changes in the irradiated samples due to combined effect of nuclear and electronic energy loss. The interfacial mixing is studied by Rutherford backscattering (RBS).

Ion Beam Analysis of Diffusion in Diamondlike Carbon Films

NASA Astrophysics Data System (ADS)

Chaffee, Kevin Paul

The van de Graaf accelerator facility at Case Western Reserve University was developed into an analytical research center capable of performing Rutherford Backscattering Spectrometry, Elastic Recoil Detection Analysis for hydrogen profiling, Proton Enhanced Scattering, and ^4 He resonant scattering for ^{16 }O profiling. These techniques were applied to the study of Au, Na^+, Cs ^+, and H_2O water diffusion in a-C:H films. The results are consistent with the fully constrained network model of the microstructure as described by Angus and Jansen.

Rutherford Backscattering Spectrometry studies of 100 keV nitrogen ion implanted polypropylene polymer

NASA Astrophysics Data System (ADS)

Chawla, Mahak; Aggarwal, Sanjeev; Sharma, Annu

2017-09-01

The effect of nitrogen ion implantation on the structure and composition in polypropylene (PP) polymer has been studied. Implantation was carried out using 100 keV N+ ions at different fluences of 1 × 1015, 1 × 1016 and 1 × 1017 ions cm-2 with beam current density of ∼0.65 μA cm-2. Surface morphological changes in the pre- and post-implanted PP specimens have been studied using Rutherford Backscattering Spectrometry (RBS) and UV-Visible Spectroscopy. The spatial distribution of implantation induced modification in the form of carbonization and dehydrogenation in the near surface region of PP matrix, the projected range, retained dose of implanted nitrogen, the various elements present in the implanted layers and their differential cross-sections have been analyzed using RBS spectra. RUMP simulation yielded an increase in the concentration of carbon near the surface from 33 at.% (virgin) to 42 at.% at fluence of 1 × 1017 N+ cm-2. Further, optical absorption has been found to increase with a shift in the absorption edge from UV towards visible region with increasing fluence. UV-Vis absorption spectra also indicate a drastic decrease in optical energy gap from 4.12 eV (virgin) to 0.25 eV (1 × 1017 N+ cm-2) indicating towards the formation of carbonaceous network in the implanted region. All these changes observed using UV-Visible have been further correlated with the outcomes of the RBS characterization.

Studies of PMMA sintering foils with and without coating by magnetron sputtering Pd

NASA Astrophysics Data System (ADS)

Cutroneo, M.; Mackova, A.; Torrisi, L.; Vad, K.; Csik, A.; Ando', L.; Svecova, B.

2017-09-01

Polymethylmethacrylate thin foils were prepared by using physical and chemical processes aimed at changing certain properties. The density and the optical properties were changed obtaining clear and opaque foils. DC magnetron sputtering method was used to cover the foils with thin metallic palladium layers. The high optical absorbent foils were obtained producing microstructured PMMA microbeads with and without thin metallic coatings. Rutherford Backscattering Spectroscopy, optical investigation and microscopy were employed to characterize the prepared foils useful in the field study of laser-matter interaction.

Off-stoichiometry indexation of BiFeO3 thin film on silicon by Rutherford backscattering spectrometry

NASA Astrophysics Data System (ADS)

Wang, Ze-Song; Xiao, Ren-Zheng; Zou, Chang-Wei; Xie, Wei; Tian, Can-Xin; Xue, Shu-Wen; Liu, Gui-Ang; Devi, Neena; Fu, De-Jun

2018-04-01

Not Available Project supported by the National Natural Science Foundation of China (Grant Nos. 11605103, 11405117, and 11747074), the Guangdong Provincial Natural Science Foundation, China (Grant Nos. 2014A030307008 and 2016A030313670), and the Guangdong Provincial Science and Technology Planning Project, China (Grant Nos. 2016A010103041 and 2017A010103025).

Complementary use of ion beam elastic backscattering and recoil detection analysis for the precise determination of the composition of thin films made of light elements

NASA Astrophysics Data System (ADS)

Climent-Font, A.; Cervera, M.; Hernández, M. J.; Muñoz-Martín, A.; Piqueras, J.

2008-04-01

Rutherford backscattering spectrometry (RBS) is a well known powerful technique to obtain depth profiles of the constituent elements in a thin film deposited on a substrate made of lighter elements. In its standard use the probing beam is typically 2 MeV He. Its capabilities to obtain precise composition profiles are severely diminished when the overlaying film is made of elements lighter than the substrate. In this situation the analysis of the energy of the recoiled element from the sample in the elastic scattering event, the ERDA technique may be advantageous. For the detection of light elements it is also possible to use beams at specific energies producing elastic resonances with these light elements to be analyzed, with a much higher scattering cross sections than the Rutherford values. This technique may be called non-RBS. In this work we report on the complementary use of ERDA with a 30 MeV Cl beam and non-RBS with 1756 keV H ions to characterize thin films made of boron, carbon and nitrogen (BCN) deposited on Si substrates.

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

NASA Astrophysics Data System (ADS)

Xu, Chi; Senaratne, Charutha L.; Culbertson, Robert J.; Kouvetakis, John; Menéndez, José

2017-09-01

The compositional dependence of the lattice parameter in Ge1-ySny alloys has been determined from combined X-ray diffraction and Rutherford Backscattering (RBS) measurements of a large set of epitaxial films with compositions in the 0 < y < 0.14 range. In view of contradictory prior results, a critical analysis of this method has been carried out, with emphasis on nonlinear elasticity corrections and systematic errors in popular RBS simulation codes. The approach followed is validated by showing that measurements of Ge1-xSix films yield a bowing parameter θGeSi =-0.0253(30) Å, in excellent agreement with the classic work by Dismukes. When the same methodology is applied to Ge1-ySny alloy films, it is found that the bowing parameter θGeSn is zero within experimental error, so that the system follows Vegard's law. This is in qualitative agreement with ab initio theory, but the value of the experimental bowing parameter is significantly smaller than the theoretical prediction. Possible reasons for this discrepancy are discussed in detail.

Investigation of Damage with Cluster Ion Beam Irradiation Using HR-RBS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seki, Toshio; Aoki, Takaaki; Matsuo, Jiro

2008-11-03

Cluster ion beam can process targets with shallow damage because of the very low irradiation energy per atom. However, it is needed to investigate the damage with cluster ion beam irradiation, because recent applications demand process targets with ultra low damage. The shallow damage can be investigated from depth profiles of specific species before and after ion irradiation. They can be measured with secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectroscopy (RBS). High resolution Rutherford backscattering spectroscopy (HR-RBS) is a non destructive measurement method and depth profiles can be measured with nano-resolution. The cluster ion beam mixing of thinmore » Ni layer in carbon targets can be investigated with HR-RBS. The mixing depth with cluster ion irradiation at 10 keV was about 10 nm. The mixing depth with cluster ion irradiation at 1 keV and 5 keV were less than 1 nm and 5 nm, respectively. The number of displaced Ni atoms with cluster ion irradiation was very larger than that with monomer ion irradiation of same energy. This result shows that violent mixing occurs with single cluster impact.« less

Studies of implanted iron in silicon by channeling and Rutherford backscattering

NASA Technical Reports Server (NTRS)

Wang, P. W.; Cheng, H. S.; Gibson, W. M.; Corbett, J. W.

1986-01-01

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Multilayer CrPtCr/NiAu ohmic contacts with p-type GaAs in heterojunction laser structures

NASA Astrophysics Data System (ADS)

Wójcik, I.; Stareev, G.; Barcz, A.; Domański, M.

1988-11-01

Multilayer CrPtCr/NiAu metallization was deposited by sputtering in a magnetron on the p-type side of GaAs in a pulsed laser heterostructure. Heat treatment at 490 °C for 3 min produced a reliable ohmic contact with a specific resistance of 10- 6-10- 5 Ω · cm2, depending on the substrate doping. Secondary-ion mass spectroscopy and Rutherford backscattering methods were used to study the mechanism of formation of a contact.

Measuring the stopping power of α particles in compact bone for BNCT

NASA Astrophysics Data System (ADS)

Provenzano, L.; Rodríguez, L. M.; Fregenal, D.; Bernardi, G.; Olivares, C.; Altieri, S.; Bortolussi, S.; González, S. J.

2015-01-01

The stopping power of α particles in thin films of decalcified sheep femur, in the range of 1.5 to 5.0 MeV incident energy, was measured by transmission of a backscattered beam from a heavy target. Additionally, the film elemental composition was determined by Rutherford Backscattering Spectrometry (RBS). These data will be used to measure boron concentration in thin films of bone using a spectrometry technique developed by the University of Pavia, since the concentration ratio between healthy tissue and tumor is of fundamental importance in Boron Neutron Capture Therapy (BNCT). The present experimental data are compared with numerical simulation results and with tabulated stopping power data of non-decalcified human bone.

Ion Beam Irradiation Studies Of Ultrananocrystalline Diamond (UNCD)

NASA Astrophysics Data System (ADS)

Kayani, A.; Garratt, E.; AlFaify, S.; Dissanayake, A.; Tecos, G.; Mancini, D. C.; Syed, M.

2011-06-01

Investigations into the effects of high-energy ion bombardment of ultrananocrystalline diamond (UNCD) thin films was performed using 3 and 6 MeV protons and 24 MeV F4+, with the fluence of 2.1×1017 ions/cm2, 2.9×1017 ions/cm2, and 6.7×1015 ions/cm2 respectively. Objective of the research is to investigate the effect of structural damage on the physical properties of the material and compare it with the structure of unirradiated and N doped UNCD. Pre- and post-irradiated samples were analyzed by ion beam analysis (IBA) measurements, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). IBA measurements including Rutherford backscattering spectrometry (RBS), non-Rutherford backscattering spectrometry (NRBS) and elastic recoil detection analysis (ERDA) were used to determine elemental concentration of pre- and post-irradiated samples. Visible Raman spectra corresponding to samples irradiated at 3 and 6 MeV protons did not show much variation. For 24 MeV F4+ irradiated sample, significant changes were observed, particularly the loss of a shoulder at 1179 cm-1 and sharpening of the G peak at around 1532 cm-1, indicating possible significant changes at the grain boundary and increase in sp2 phase. AFM measurements show a reduction in RMS roughness after bombardment possibly due to the graphitization of the UNCD surface. The results of IBA measurements did not show any change in the elemental concentration or interface region between film and substrate.

Investigation of Li/Nb-sublattices in ion implanted LiNbO3 by RBS and NRA in channelling configuration

NASA Astrophysics Data System (ADS)

Schmidt, E.; Ritter, K.; Gärtner, K.; Wendler, E.

2017-10-01

Differently oriented LiNbO3 crystals were implanted at room temperature with 1 MeV iodine ions to fluences between 2 × 1013 and 1 × 1014 cm-2, which cover the transition from a low damage level up to complete amorphisation. The aim of this work was to explore the use of nuclear reaction analysis (NRA) in combination with Rutherford backscattering spectrometry (RBS) in channelling configuration for studying the damage evolution as a function of the ion fluence in both the Li and Nb sublattice. Protons with energies between 1.4 and 1.6 MeV and a standard RBS setup were used. Scattering events detected at low energies result from Rutherford backscattering of protons on Nb and O atoms. At high energies alpha particles are registered, which result from the nuclear reaction between protons and Li atoms. Along different low-index crystallographic directions channelling effects within both the RBS and NRA part of the spectra are observed. However, the strength of channeling within the NRA part depends on the crystallographic direction investigated. These effects are explained by the nature of ion-channelling with respect to the small atomic number of Li and is supported by calculations of minimum yields (ratio of scattering yield in aligned and random direction) applying the computer code DICADA. The consequence is that damage studies with NRA can be only performed in Z-direction of LiNbO3. In this case, the Li and Nb sublattice were found to be similarly damaged after 1 MeV iodine implantation.

Backscattering measurement of 6He on 209Bi: Critical interaction distance

NASA Astrophysics Data System (ADS)

Guimarães, V.; Kolata, J. J.; Aguilera, E. F.; Howard, A.; Roberts, A.; Becchetti, F. D.; Torres-Isea, R. O.; Riggins, A.; Febrarro, M.; Scarduelli, V.; de Faria, P. N.; Monteiro, D. S.; Huiza, J. F. P.; Arazi, A.; Hinnefeld, J.; Moro, A. M.; Rossi, E. S.; Morcelle, V.; Barioni, A.

2016-06-01

An elastic backscattering experiment has been performed at energies below the Coulomb barrier to investigate static and dynamic effects in the interaction of 6He with 209Bi. The measured cross sections are presented in terms of the d σ /d σR u t h ratio, as a function of the distance of closest approach on a Rutherford trajectory. The data are compared with a three-body CDCC calculation and good agreement is observed. In addition, the critical distance of interaction was extracted. A larger value was obtained for the exotic 6He nucleus as compared with the weakly bound 6Li and 9Be nuclei and the tightly bound 4He12C, and 16O nuclei.

Enhancement of the giant magnetoresistance in spin valves via oxides formed from magnetic layers

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.

2000-11-01

An enhancement of the giant magnetoresistance effect is investigated in spin valves where oxide layers, which are formed from magnetic layers, are incorporated in the structure. Information about Co-Fe based nanooxide layer (NOL) is obtained via x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Cross-section transmission electron microscopy is also used to explore the effect of an NOL on the polycrystalline structure of the spin valve.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jena, Puru; Kandalam, Anil K.; Christian, Theresa M.

Gallium phosphide bismide (GaP1-xBix) epilayers with bismuth fractions from 0.9% to 3.2%, as calculated from lattice parameter measurements, were studied with Rutherford backscattering spectrometry (RBS) to directly measure bismuth incorporation. The total bismuth fractions found by RBS were higher than expected from the lattice parameter calculations. Furthermore, in one analyzed sample grown by molecular beam epitaxy at 300 degrees C, 55% of incorporated bismuth was found to occupy interstitial sites. We discuss implications of this high interstitial incorporation fraction and its possible relationship to x-ray diffraction and photoluminescence measurements of GaP0.99Bi0.01.

Characterization of magneto-optical media

NASA Technical Reports Server (NTRS)

Hajjar, Roger A.; Wu, Te-Ho; Mansuripur, M.

1991-01-01

Amorphous rare earth-transition metal (RE-TM) alloys and compositionally modulated TM/TM films were characterized in terms of their magnetic, magneto-optic, and galvanomagnetic properties. The loop tracer, vibrating sample magnetometer (VSM), and Rutherford Backscattering (RBS) facility were used to characterize and analyze the various properties of these magneto-optical storage media. Kerr effect, ellipticity, coercivity, and anisotropy at various temperatures, magnetoresistance, and resistivity are among the properties measured in Co/Pt films, Co/Pd films, and TbFeCo films.

Symposium U: Thermoelectric Power Generation. Held in Boston, Massachusetts on November 26-29, 2007

DTIC Science & Technology

2008-04-01

including X - ray /electron diffraction, TGA analysis, Raman / Fourier Transform Infrared Spectroscopy, electron microscopy, Rutherford back-scattering and...Energy dispersive X - ray analysis were performed on the treated sample. The results revealed that a surface layer (from 10 nm to up to micron in...nanoparticles into a matrix of bulk Bi2Te 3 material via a hot pressing process. These nanocomposites have been examined by SEM and X - ray powder

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

NASA Astrophysics Data System (ADS)

Roeckerath, M.; Lopes, J. M. J.; Özben, E. Durǧun; Urban, C.; Schubert, J.; Mantl, S.; Jia, Y.; Schlom, D. G.

2010-01-01

Terbium scandate thin films were deposited by e-gun evaporation on (100) silicon substrates. Rutherford backscattering spectrometry and x-ray diffraction studies revealed homogeneous chemical compositions of the films. A dielectric constant of 26 and CV-curves with small hystereses were measured as well as low leakage current densities of <1 nA/cm2. Fully depleted n-type field-effect transistors on thin silicon-on-insulator substrates with terbium scandate gate dielectrics were fabricated with a gate-last process. The devices show inverse subthreshold slopes of 80 mV/dec and a carrier mobility for electrons of 225 cm2/V•s was extracted.

Interface mediated enhanced mixing of multilayered Ni-Bi thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Siva, V.; Chettah, A.; Ojha, S.; Tripathi, A.; Kanjilal, D.; Sahoo, Pratap K.

2017-10-01

We report the effect of ion beam mixing of Ni/Bi multilayers using 100 MeV Au ions as a function of irradiation fluences. X-ray diffraction study reveals the higher magnitude of NiBi3 and NiBi phases compared to elemental Ni and Bi after ion irradiation. We observe an evolution of grainy structures to a molten-like surface with increasing ion fluences. These features were also reflected in the Rutherford Backscattering spectrometry spectra, in terms of the enhanced mixing with increasing ion fluences. The experimental findings were understood on the basis of inelastic thermal spike model calculations.

Reaction of metals in lower earth orbit during Space Shuttle flight 41-G

NASA Technical Reports Server (NTRS)

Fromhold, A. T., Jr.; Daneshvar, K.; Whitaker, A. F.; Little, S. A.

1985-01-01

The effects of ambient space environment on metals were studied by exposing specimens of Cu, Ag, Au, Ni, Cr, Al, Pt, and Pd on flight 41-G (STS-17). Data obtained by ellipsometry (ELL), Rutherford backscattering (RBS), and proton-induced X-ray emission (PIXE) before and after flight are summarized. Although the effects of space environment were most pronounced for silver, there were significant changes in the surface properties of the majority of the other metals. The surface optical constants proved to be the most sensitive measure of surface changes. These changes are attributed to the interaction of the metals with atomic oxygen.

An approach to tune the amplitude of surface ripple patterns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Tanuj; Kanjilal, D.; Kumar, Ashish

An approach is presented to tune the amplitude of ripple patterns using ion beam. By varying the depth location of amorphous/crystalline interface, ripple patterns of different amplitude with similar wavelength were grown on the surface of Si (100) using 50 keV Ar{sup +} beam irradiation. Atomic force microscopy study demonstrates the tuning of amplitude of ripples patterns for wide range. Rutherford backscattering channeling measurement was performed to measure the depth location of amorphous/crystalline interface. It is postulated that the ion beam stimulated solid flow inside the amorphous layer controls the wavelength, whereas mass rearrangement at amorphous/crystalline interface controls the amplitude.

Stopping cross sections for 0.25-3.0-MeV He-4 ions in cadmium sulfide

NASA Technical Reports Server (NTRS)

Miller, W. E.; Hutchby, J. A.

1975-01-01

Stopping cross sections of He-4 ions with energies between 0.25 and 3.0 MeV have been measured for cadmium sulfide with a probable error of plus or minus 7% to 8%. The experimental method utilized the Rutherford backscattering technique and measured the energy loss of elastically scattered He-4 ions from films of cadmium sulfide sputtered on carbon substrates. The experimental data are compared with recent experimental and theoretical results.

Durability of reflector materials in the space environment

NASA Technical Reports Server (NTRS)

Whitaker, Ann F.; Finckenor, Miria M.; Edwards, David; Kamenetzky, Rachel R.; Linton, Roger C.

1995-01-01

Various reflector configurations were flown as part of the Long Duration Exposure Facility (LDEF) A0171 experiment. These reflectors consisted of nickel substrates with aluminum, enhanced aluminum (multiple layers of aluminum and silver), silver, and silver alloy coatings with glassy ceramic overcoatings. These samples have been evaluated for changes in reflectance due to 5.8 years in the space environment. The reflector materials have also been evaluated using angstrometer, Rutherford backscattering (RBS), and electron spectroscopy for chemical analysis (ESCA) techniques.

Elucidating the Wavelength Dependence of Phonon Scattering in Nanoparticle-Matrix Composites using Phonon Spectroscopy

DTIC Science & Technology

2016-07-11

composites with x - ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Rutherford backscattering spectroscopy...RBS), particle-induced x - ray emission (PIXE), and energy dispersive x - ray spectroscopy (EDX). This work complements earlier works on CdSe...sample shows only In2Se3 and CdIn2Se4 XRD peaks (Figure 1.4e), it is stoichiometrically   Figure 1.4. X - ray diffraction patterns of (a) γ-In2Se3

Absence of solute drag in solidification

NASA Astrophysics Data System (ADS)

Kittl, J. A.; Aziz, M. J.; Brunco, D. P.; Thompson, M. O.

1994-05-01

The interface response functions for alloy solidification were measured in the nondegenerate regime of partial solute trapping. We used a new technique to measure temperatures and velocities simultaneously during rapid solidification of Si-As alloys induced by pulsed laser melting. In addition, partition coefficients were determined using Rutherford backscattering. The results are in good agreement with predictions of the Continuous Growth Model without solute drag of M. J. Aziz and T. Kaplan [Acta Metall. 36, 1335 (1988)] and are inconsistent with all solute drag models.

Infiltration of CdTe nano crystals into a ZnO wire vertical matrix by using the isothermal closed space technique

NASA Astrophysics Data System (ADS)

Larramendi, S.; Vaillant Roca, Lidice; Saint-Gregoire, Pierre; Ferraz Dias, Johnny; Behar, Moni

2017-10-01

A ZnO nanorod structure was grown by the hydrothermal method and interpenetrated with CdTe using the isothermal closed space sublimation technique. The obtained structure was studied by using the Rutherford backscattering spectrometry (RBS), Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HRTEM). The X-ray Diffraction (XRD) technique confirmed the presence of CdTe nanocrystals (NCs) of very small size formed on the surface and in the interspaces between the ZnO nanorods. The RBS observations together with the SEM observations give information on the obtained structure. Finally the photoluminescence studies show a strong energy confinement effect on the grown CdTe NCs.

MeV ion-beam analysis of optical data storage films

NASA Technical Reports Server (NTRS)

Leavitt, J. A.; Mcintyre, L. C., Jr.; Lin, Z.

1993-01-01

Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

Evaluation of lattice displacement in Mg - Implanted GaN by Rutherford backscattering spectroscopy

NASA Astrophysics Data System (ADS)

Nishikata, N.; Kushida, K.; Nishimura, T.; Mishima, T.; Kuriyama, K.; Nakamura, T.

2017-10-01

Evaluation of lattice displacement in Mg-ion implanted GaN is studied by combining elastic recoil detection analysis (ERDA), Rutherford backscattering spectroscopy (RBS) and Photoluminescence (PL) measurements. Mg-ion implantation into GaN single crystal wafer is performed with energies of 30 keV (ion fluence; 3.5 × 1014 cm-2) and 60 keV (6.5 × 1014 cm-2) at room temperature. The ERDA measurements using the 1.5 MeV helium beam can evaluate hydrogen from the surface to ∼300 nm. The hydrogen concentration for un-implanted and as-implanted GaN is 3.1 × 1014 cm-2 and 6.1 × 1014 cm-2 at around 265 nm in depth. χmin (the ratio of aligned and random yields) near the surface of the 〈0 0 0 1〉 direction for Ga is 1.61% for un-implanted and 2.51% for Mg-ion implanted samples. On the other hand, the value of χmin for N is 10.08% for un-implanted and 11.20% for Mg-ion implanted samples. The displacement concentration of Ga and N estimated from these χmin values is 4.01 × 1020 cm-3 and 5.46 × 1020 cm-3, respectively. This suggests that Ga vacancy (VGa), N vacancy (VN), Ga interstitial (Gai), and N interstitial (Ni) is introduced in Mg-ion implanted GaN. A strong emission at around 400 nm in as-implanted GaN is related to a VN donor and some acceptor pairs. It is suggested that the origin of the very high resistivity after the Mg-ion implantation is attributed to the carrier compensation effect due to the deep level of Ni as a non-radiative center.

Element-resolved Kikuchi pattern measurements of non-centrosymmetric materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vos, Maarten, E-mail: maarten.vos@anu.edu.au

2017-01-15

Angle-resolved electron Rutherford backscattering (ERBS) measurements using an electrostatic electron energy analyser can provide unique access to element-resolved crystallographic information. We present Kikuchi pattern measurements of the non-centrosymmetric crystal GaP, separately resolving the contributions of electrons backscattered from Ga and P. In comparison to element-integrated measurements like in the method of electron backscatter diffraction (EBSD), the effect of the absence of a proper 4-fold rotation axis in the point group of GaP can be sensed with a much higher visibility via the element-resolved Ga to P intensity ratio. These element-resolved measurements make it possible to experimentally attribute the previously observedmore » point-group dependent effect in element-integrated EBSD measurements to the larger contribution of electrons scattered from Ga compared to P. - Highlights: •Element specific Kikuchi patterns are presented for GaP. •Absence of a proper four-fold rotation axis is demonstrated. •Ga and P intensity variations after 90 degree rotation have opposite phase. •The asymmetry in the total intensity distribution resembles that of Ga.« less

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Crook, Adam M.; Yu, Kin M.; Bank, Seth R.

2012-01-01

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 μm) wavelength range.

Characterization of hybrid cobalt-porous silicon systems: protective effect of the Matrix in the metal oxidation

PubMed Central

2012-01-01

In the present work, the characterization of cobalt-porous silicon (Co-PSi) hybrid systems is performed by a combination of magnetic, spectroscopic, and structural techniques. The Co-PSi structures are composed by a columnar matrix of PSi with Co nanoparticles embedded inside, as determined by Transmission Electron Microscopy (TEM). The oxidation state, crystalline structure, and magnetic behavior are determined by X-Ray Absorption Spectroscopy (XAS) and Alternating Gradient Field Magnetometry (AGFM). Additionally, the Co concentration profile inside the matrix has been studied by Rutherford Backscattering Spectroscopy (RBS). It is concluded that the PSi matrix can be tailored to provide the Co nanoparticles with extra protection against oxidation. PMID:22938050

DOE Office of Scientific and Technical Information (OSTI.GOV)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containingmore » ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.« less

Hydrogen transport behavior of beryllium

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Hankins, M. R.; Longhurst, G. R.; Pawelko, R. J.; Macaulay-Newcombe, R. G.

1992-12-01

Beryllium is being evaluated for use as a plasma-facing material in the International Thermonuclear Experimental Reactor (ITER). One concern in the evaluation is the retention and permeation of tritium implanted into the plasma-facing surface. We performed laboratory-scale studies to investigate mechanisms that influence hydrogen transport and retention in beryllium foil specimens of rolled powder metallurgy product and rolled ingot cast beryllium. Specimen characterization was accomplished using scanning electron microscopy, Auger electron spectroscopy, and Rutherford backscattering spectrometry (RBS) techniques. Hydrogen transport was investigated using ion-beam permeation experiments and nuclear reaction analysis (NRA). Results indicate that trapping plays a significant role in permeation, re-emission, and retention, and that surface processes at both upstream and downstream surfaces are also important.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)

NASA Astrophysics Data System (ADS)

Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, W. K.; Wang, L. S.; Surya, C.

2000-01-01

Rutherford backscattering spectrometry and ion channeling were used to determine the relative quantities of wurtzite and zinc-blende phases in metalorganic chemical vapor deposition grown Mg-doped GaN(0001) on an Al2O3(0001) substrate with a GaN buffer layer. Offnormal axial channeling scans were used. High-resolution x-ray diffraction measurements also confirmed the presence of mixed phases. The in-plane orientation was found to be GaN[11¯0]‖GaN[112¯0]‖Al2O3[112¯0]. The effects of rapid thermal annealing on the relative phase content, thickness and crystalline quality of the GaN epilayer were also studied.

Ion-irradiation-induced densification of zirconia sol-gel thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Levine, T.E.; Giannelis, E.P.; Kodali, P.

1994-02-01

We have investigated the densification behavior of sol-gel zirconia films resulting from ion irradiation. Three sets of films were implanted with neon, krypton, or xenon. The ion energies were chosen to yield approximately constant energy loss through the film and the doses were chosen to yield similar nuclear energy deposition. Ion irradiation of the sol-gel films resulted in carbon and hydrogen loss as indicated by Rutherford backscattering spectrometry and forward recoil energy spectroscopy. Although the densification was hypothesized to result from target atom displacement, the observed densification exhibits a stronger dependence on electronic energy deposition.

Ion beam analysis of ancient Mexican colored teeth from archaeological sites in Mexico City

NASA Astrophysics Data System (ADS)

Rodríguez-Fernández, L.; Ruvalcaba-Sil, J. L.; Ontalba-Salamanca, M. A.; Román-Berrelleza, J. A.; Gallardo, M. L.; Grimaldi, D. M.; de Lucio, O. G.; Miranda, J.

1999-04-01

Infant teeth with extremely rare colored enamel regions white, blue-gray and brown, have been analyzed by Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS). The teeth were part of human being sacrifices to deities of the Mexica culture, Mexico, corresponding to the Late Post-classic period (1325-1521 A.D.). Comparisons to normal teeth from the same historical period indicate that the colored ones present larger mean amounts of Mn and Fe, while Zn and Sr do not differ too much. Possible inorganic compounds responsible for the different colorations are indicated.

RBS as a new primary direct reference method for measuring quantity of material

NASA Astrophysics Data System (ADS)

Jeynes, C.

2017-09-01

The quantity of material in thin films can be measured reliably, non-destructively, and at an absolute traceable accuracy with a combined standard uncertainty of 1% by Rutherford backscattering spectrometry (RBS). We have demonstrated a measurement protocol for the determination of quantity of material by RBS that has been accredited at this accuracy to the ISO 17025 standard by the United Kingdom Accreditation Service (UKAS). The method is entirely traceable to SI units relying on no artefacts, and thus qualifies as a primary direct reference method as defined by the ISO Guide 35:1985 (paragraph 9.4.1).

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

NASA Technical Reports Server (NTRS)

Chadi, D. J.

1985-01-01

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Structural characterization of Co-Re superlattices

NASA Astrophysics Data System (ADS)

Melo, L. V.; Trindade, I.; From, M.; Freitas, P. P.; Teixeira, N.; da Silva, M. F.; Soares, J. C.

1991-12-01

Co-Re superlattices were prepared with nominal periodicities of 65-67 Å and varying bilayer composition. The structural characterization was made by x-ray diffraction and Rutherford backscattering spectrometry (RBS). First, second, and third order satellites are observed in the x-ray diffractogram at 2θ values and with intensities close to those predicted by simulation. This confirms the coherence of the superlattice. RBS measurements combined with RUMP simulations give information on interface sharpness and the absolute thicknesses of the Co and Re layers. Discrepancies between the experimental and simulated diffractograms are found for Co thicknesses below 18 Å.

Angular distribution of species in pulsed laser deposition of LaxCa1-xMnO3

NASA Astrophysics Data System (ADS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-05-01

The angular distribution of species from a La0.4Ca0.6MnO3 target irradiated with a 248 nm nanosecond pulsed laser was investigated by Rutherford backscattering spectrometry for four different Ar pressures. The film thickness angular distribution was also analyzed using profilometry. Depending on the background gas pressure, the target to substrate distance, and the angular location the film thickness and composition varies considerably. In particular the film composition could vary by up to 17% with respect to the composition of the target material.

Low-Energy Sputtering Research

NASA Technical Reports Server (NTRS)

Ray, P. K.; Shutthanandan, V.

1999-01-01

An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

Investigation of Cellular Interactions of Nanoparticles by Helium Ion Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arey, Bruce W.; Shutthanandan, V.; Xie, Yumei

The helium ion mircroscope (HIM) probes light elements (e.g. C, N, O, P) with high contrast due to the large variation in secondary electron yield, which minimizes the necessity of specimen staining. A defining characteristic of HIM is its remarkable capability to neutralize charge by the implementation of an electron flood gun, which eliminates the need for coating non-conductive specimens for imaging at high resolution. In addition, the small convergence angle in HeIM offers a large depth of field (~5x FE-SEM), enabling tall structures to be viewed in focus within a single image. Taking advantage of these capabilities, we investigatemore » the interactions of engineered nanoparticles (NPs) at the surface of alveolar type II epithelial cells grown at the air-liquid interface (ALI). The increasing use of nanomaterials in a wide range of commercial applications has the potential to increase human exposure to these materials, but the impact of such exposure on human health is still unclear. One of the main routs of exposure is the respiratory tract, where alveolar epithelial cells present a vulnerable target at the interface with ambient air. Since the cellular interactions of NPs govern the cellular response and ultimately determine the impact on human health, our studies will help delineating relationships between particle properties and cellular interactions and response to better evaluate NP toxicity or biocompatibility. The Rutherford backscattered ion (RBI) is a helium ions imaging mode, which backscatters helium ions from every element except hydrogen, with a backscatter yield that depends on the atomic number of the target. Energy-sensitive backscatter analysis is being developed, which when combined with RBI image information, supports elemental identification at helium ion nanometer resolution. This capability will enable distinguishing NPs from cell surface structures with nanometer resolution.« less

Investigation of cellular interactions of nanoparticles by helium ion microscopy

NASA Astrophysics Data System (ADS)

Arey, B. W.; Shutthanandan, V.; Xie, Y.; Tolic, A.; Williams, N.; Orr, G.

2011-06-01

The helium ion microscope (HIM) probes light elements (e.g. C, N, O, P) with high contrast due to the large variation in secondary electron yield, which minimizes the necessity of specimen staining. A defining characteristic of HIM is its remarkable capability to neutralize charge by the implementation of an electron flood gun, which eliminates the need for coating non-conductive specimens for imaging at high resolution. In addition, the small convergence angle in HeIM offers a large depth of field (~5× FE-SEM), enabling tall structures to be viewed in focus within a single image. Taking advantage of these capabilities, we investigate the interactions of engineered nanoparticles (NPs) at the surface of alveolar type II epithelial cells grown at the airliquid interface (ALI). The increasing use of nanomaterials in a wide range of commercial applications has the potential to increase human exposure to these materials, but the impact of such exposure on human health is still unclear. One of the main routs of exposure is the respiratory tract, where alveolar epithelial cells present a vulnerable target at the interface with ambient air. Since the cellular interactions of NPs govern the cellular response and ultimately determine the impact on human health, our studies will help delineating relationships between particle properties and cellular interactions and response to better evaluate NP toxicity or biocompatibility. The Rutherford backscattered ion (RBI) is a helium ions imaging mode, which backscatters helium ions from every element except hydrogen, with a backscatter yield that depends on the atomic number of the target. Energy-sensitive backscatter analysis is being developed, which when combined with RBI image information, supports elemental identification at helium ion nanometer resolution. This capability will enable distinguishing NPs from cell surface structures with nanometer resolution.

RBS/C, HRTEM and HRXRD study of damage accumulation in irradiated SrTiO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jagielski, Jacek; Jozwik, Przemyslaw A.; Jozwik Biala, Iwona

2013-05-14

Damage accumulation in argon-irradiated SrTiO3 single crystals has been studied by using combination of Rutherford Backscattering/Channeling (RBS/C), High Resolution Transmission Electron Microscopy (HRTEM) and High Resolution X-Ray Diffraction (HRXRD) techniques. The RBS/C spectra were fitted using McChasy, a Monte Carlo simulation code allowing the quantitative analysis of amorphous-like and dislocation-like types of defects. The results were interpreted by using a Multi-Step Damage Accumulation model which assumes, that the damage accumulation occurs in a series of structural transformations, the defect transformations are triggered by a stress caused by formation of a free volume in the irradiated crystal. This assumption has beenmore » confirmed by High Resolution Transmission Electron Microscopy and High Resolution X-Ray Diffraction analysis.« less

Cd ion implantation in AlN

NASA Astrophysics Data System (ADS)

Miranda, S. M. C.; Franco, N.; Alves, E.; Lorenz, K.

2012-10-01

AlN thin films were implanted with cadmium, to fluences of 1 × 1013 and 8 × 1014 at/cm2. The implanted samples were annealed at 950 °C under flowing nitrogen. Although implantation damage in AlN is known to be extremely stable the crystal could be fully recovered at low fluences. At high fluences the implantation damage was only partially removed. Implantation defects cause an expansion of the c-lattice parameter. For the high fluence sample the lattice site location of the ions was studied by Rutherford Backscattering/Channelling Spectrometry. Cd ions are found to be incorporated in substitutional Al sites in the crystal and no significant diffusion is seen upon thermal annealing. The observed high solubility limit and site stability are prerequisite for using Cd as p-type dopant in AlN.

Complementary study of the internal porous silicon layers formed under high-dose implantation of helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Chesnokov, Yu. M.

The surface layers of Si(001) substrates subjected to plasma-immersion implantation of helium ions with an energy of 2–5 keV and a dose of 5 × 10{sup 17} cm{sup –2} have been investigated using high-resolution X-ray reflectivity, Rutherford backscattering, and transmission electron microscopy. The electron density depth profile in the surface layer formed by helium ions is obtained, and its elemental and phase compositions are determined. This layer is found to have a complex structure and consist of an upper amorphous sublayer and a layer with a porosity of 30–35% beneath. It is shown that the porous layer has the sharpestmore » boundaries at a lower energy of implantable ions.« less

Micro-PIXE and micro-RBS characterization of micropores in porous silicon prepared using microwave-assisted hydrofluoric acid etching.

PubMed

Ahmad, Muthanna; Grime, Geoffrey W

2013-04-01

Porous silicon (PS) has been prepared using a microwave-assisted hydrofluoric acid (HF) etching method from a silicon wafer pre-implanted with 5 MeV Cu ions. The use of microbeam proton-induced X-ray emission (micro-PIXE) and microbeam Rutherford backscattering techniques reveals for the first time the capability of these techniques for studying the formation of micropores. The porous structures observed from micro-PIXE imaging results are compared to scanning electron microscope images. It was observed that the implanted copper accumulates in the same location as the pores and that at high implanted dose the pores form large-scale patterns of lines and concentric circles. This is the first work demonstrating the use of microwave-assisted HF etching in the formation of PS.

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE

NASA Astrophysics Data System (ADS)

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-09-01

The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2 and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged.

Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

2016-05-23

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest themore » formation of Inter Layer (IL) in between Substrate and film.« less

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

NASA Astrophysics Data System (ADS)

Baillet, J.; Gavarini, S.; Millard-Pinard, N.; Garnier, V.; Peaucelle, C.; Jaurand, X.; Duranti, A.; Bernard, C.; Rapegno, R.; Cardinal, S.; Escobar Sawa, L.; De Echave, T.; Lanfant, B.; Leconte, Y.

2018-05-01

Polycrystalline β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.1015 and 1.1017 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 1017 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

Preparation and characterization of 33S samples for 33S(n, α)30Si cross-section measurements at the n_TOF facility at CERN

NASA Astrophysics Data System (ADS)

Praena, J.; Ferrer, F. J.; Vollenberg, W.; Sabaté-Gilarte, M.; Fernández, B.; García-López, J.; Porras, I.; Quesada, J. M.; Altstadt, S.; Andrzejewski, J.; Audouin, L.; Bécares, V.; Barbagallo, M.; Bečvář, F.; Belloni, F.; Berthoumieux, E.; Billowes, J.; Boccone, V.; Bosnar, D.; Brugger, M.; Calviño, F.; Calviani, M.; Cano-Ott, D.; Carrapiço, C.; Cerutti, F.; Chiaveri, E.; Chin, M.; Colonna, N.; Cortés, G.; Cortés-Giraldo, M. A.; Diakaki, M.; Dietz, M.; Domingo-Pardo, C.; Dressler, R.; Durán, I.; Eleftheriadis, C.; Ferrari, A.; Fraval, K.; Furman, V.; Göbel, K.; Gómez-Hornillos, M. B.; Ganesan, S.; García, A. R.; Giubrone, G.; Gonçalves, I. F.; González-Romero, E.; Goverdovski, A.; Griesmayer, E.; Guerrero, C.; Gunsing, F.; Heftrich, T.; Hernández-Prieto, A.; Heyse, J.; Jenkins, D. G.; Jericha, E.; Käppeler, F.; Kadi, Y.; Karadimos, D.; Katabuchi, T.; Ketlerov, V.; Khryachkov, V.; Kivel, N.; Koehler, P.; Kokkoris, M.; Kroll, J.; Krtička, M.; Lampoudis, C.; Langer, C.; Leal-Cidoncha, E.; Lederer, C.; Leeb, H.; Leong, L. S.; Lerendegui-Marco, J.; Losito, R.; Mallick, A.; Manousos, A.; Marganiec, J.; Martínez, T.; Massimi, C.; Mastinu, P.; Mastromarco, M.; Mendoza, E.; Mengoni, A.; Milazzo, P. M.; Mingrone, F.; Mirea, M.; Mondelaers, W.; Paradela, C.; Pavlik, A.; Perkowski, J.; Plompen, A. J. M.; Rauscher, T.; Reifarth, R.; Riego-Perez, A.; Robles, M.; Rubbia, C.; Ryan, J. A.; Sarmento, R.; Saxena, A.; Schillebeeckx, P.; Schmidt, S.; Schumann, D.; Sedyshev, P.; Tagliente, G.; Tain, J. L.; Tarifeño-Saldivia, A.; Tarrío, D.; Tassan-Got, L.; Tsinganis, A.; Valenta, S.; Vannini, G.; Variale, V.; Vaz, P.; Ventura, A.; Vermeulen, M. J.; Vlachoudis, V.; Vlastou, R.; Wallner, A.; Ware, T.; Weigand, M.; Weiss, C.; Wright, T.; Žugec, P.; n TOF Collaboration

2018-05-01

Thin 33S samples for the study of the 33S(n, α)30Si cross-section at the n_TOF facility at CERN were made by thermal evaporation of 33S powder onto a dedicated substrate made of kapton covered with thin layers of copper, chromium and titanium. This method has provided for the first time bare sulfur samples a few centimeters in diameter. The samples have shown an excellent adherence with no mass loss after few years and no sublimation in vacuum at room temperature. The determination of the mass thickness of 33S has been performed by means of Rutherford backscattering spectrometry. The samples have been successfully tested under neutron irradiation.

Patterned low temperature copper-rich deposits using inkjet printing

NASA Astrophysics Data System (ADS)

Rozenberg, Gregor G.; Bresler, Eric; Speakman, Stuart P.; Jeynes, Chris; Steinke, Joachim H. G.

2002-12-01

A PZT piezoelectric ceramic research drop-on-demand inkjet print head operating in bend mode was used as a means of delivering a copper precursor, vinyltrimethylsilane copper (+1) hexafluoroacetylacetonate, in a controlled and placement accurate fashion. The reagent disproportionates at low temperature (<200 °C), to deposit copper on glass. These deposits are shown to be more than 90% copper by weight by electron probe microanalysis and microbeam Rutherford backscattering spectroscopy. Microscopy shows a deposit diameter and three-dimensional profile that suggests a complex deposition and conversion mechanism. Our findings represent an important step towards the manufacture of electronic devices by entirely nonlithographic means.

Growth and process identification of CuInS 2 on GaP by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hwang, H. L.; Sun, C. Y.; Fang, C. S.; Chang, S. D.; Cheng, C. H.; Yang, M. H.; Lin, H. H.; Tuwan-Mu, H.

1981-10-01

Experimental techniques for growing CuInS 2 layers on GaP substrates by the metalorganic method have been developed. Hydrogen sulfide gas together with the vapors of CuCl( NCCH3) n and InCl3( NCCH3) both of which were generated by bubbling nitrogen through sources, using a solvent of acetonitride, were used as transport agents. Various characterization techniques such as atomic absorption (AA), neutron activation analysis (NAA), energy dispersive analysis by X-rays (EDAX), Rutherford back-scattering analysis (RBS), and X-ray analyses were used to help understand the fundamental mechanism of the CVD growth.

Characterization of inertial confinement fusion (ICF) targets using PIXE, RBS, and STIM analysis.

PubMed

Li, Yongqiang; Liu, Xue; Li, Xinyi; Liu, Yiyang; Zheng, Yi; Wang, Min; Shen, Hao

2013-08-01

Quality control of the inertial confinement fusion (ICF) target in the laser fusion program is vital to ensure that energy deposition from the lasers results in uniform compression and minimization of Rayleigh-Taylor instabilities. The technique of nuclear microscopy with ion beam analysis is a powerful method to provide characterization of ICF targets. Distribution of elements, depth profile, and density image of ICF targets can be identified by particle-induced X-ray emission, Rutherford backscattering spectrometry, and scanning transmission ion microscopy. We present examples of ICF target characterization by nuclear microscopy at Fudan University in order to demonstrate their potential impact in assessing target fabrication processes.

Plasma cleaning and analysis of archeological artefacts from Sipán

NASA Astrophysics Data System (ADS)

Saettone, E. A. O.; da Matta, J. A. S.; Alva, W.; Chubaci, J. F. O.; Fantini, M. C. A.; Galvão, R. M. O.; Kiyohara, P.; Tabacniks, M. H.

2003-04-01

A novel procedure using plasma sputtering in an electron-cyclotron-resonance device has been applied to clean archeological MOCHE artefacts, unearthed at the Royal Tombs of Sipán. After successful cleaning, the pieces were analysed by a variety of complementary techniques, namely proton-induced x-ray emission, Rutherford backscattering spectroscopy, x-ray diffraction, electron microscopy, and inductively coupled plasma mass spectroscopy. With these techniques, it has been possible to not only determine the profiles of the gold and silver surface layers, but also to detect elements that may be relevant to explain the gilding techniques skillfully developed by the metal smiths of the MOCHE culture.

Surface Diagnostics in Tribology Technology and Advanced Coatings Development

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1999-01-01

This paper discusses the methodologies used for surface property measurement of thin films and coatings, lubricants, and materials in the field of tribology. Surface diagnostic techniques include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and tribology examination. Each diagnostic technique provides specific measurement results in its own unique way. In due course it should be possible to coordinate the different pieces of information provided by these diagnostic techniques into a coherent self-consistent description of the surface properties. Examples are given on the nature and character of thin diamond films.

Radiation damage buildup by athermal defect reactions in nickel and concentrated nickel alloys

DOE PAGES

Zhang, S.; Nordlund, K.; Djurabekova, F.; ...

2017-04-12

We develop a new method using binary collision approximation simulating the Rutherford backscattering spectrometry in channeling conditions (RBS/C) from molecular dynamics atom coordinates of irradiated cells. The approach allows comparing experimental and simulated RBS/C signals as a function of depth without fitting parameters. The simulated RBS/C spectra of irradiated Ni and concentrated solid solution alloys (CSAs, NiFe and NiCoCr) show a good agreement with the experimental results. The good agreement indicates the damage evolution under damage overlap conditions in Ni and CSAs at room temperature is dominated by defect recombination and migration induced by irradiation rather than activated thermally.

Study of new sheep bone and Zn/Ca ratio around TiAlV screw: PIXE RBS analysis

NASA Astrophysics Data System (ADS)

Guibert, G.; Munnik, F.; Langhoff, J. D.; Von Rechenberg, B.; Buffat, Ph. A.; Laub, D.; Faber, L.; Ducret, F.; Gerber, I.; Mikhailov, S.

2008-03-01

This study reports on in vivo particle induced X-ray emission (PIXE) measurements combined with Rutherford backscattering spectroscopy (RBS) analyses of new remodeled sheep bone formed around TiAlV screws. The implants (screws) were anodized by a modified TiMax™ process. The interface between the implant and the bone was carefully investigated. [Zn]/[Ca] in-depth composition profiles as well as Ca, Fe elemental maps were recorded. The thickness of new bone formed around the screw reached 300-400 μm. Osteon and Osteoid phases were identified in the new bone. A higher [Zn]/[Ca] ratio was observed in the new bone as compared to the mature bone. Blood vessels were observed in the bone in close contact with the screw. This study shows the potential of ion beam analysis for biological and biomedical characterization.

Measurements and Diagnostics of Diamond Films and Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.

1999-01-01

The commercial potential of chemical-vapor-deposited (CVD) diamond films has been established and a number of applications have been identified through university, industry, and government research studies. This paper discusses the methodologies used for property measurement and diagnostic of CVD diamond films and coatings. Measurement and diagnostic techniques studied include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and friction examination. Each measurement and diagnostic technique provides unique information. A combination of techniques can provide the technical information required to understand the quality and properties of CVD diamond films, which are important to their application in specific component systems and environments. In this study the combination of measurement and diagnostic techniques was successfully applied to correlate deposition parameters and resultant diamond film composition, crystallinity, grain size, surface roughness, and coefficient of friction.

RBS-channeling study of radiation damage in Ar{sup +} implanted CuInSe{sub 2} crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakushev, Michael V., E-mail: michael.yakushev@strath.ac.uk; Ural Federal University, Ekaterinburg 620002; Institute of Solid State Chemistry of the Urals Branch of RAS, Ekaterinburg 620990

2016-09-15

Chalcopyrite solar cells are reported to have a high tolerance to irradiation by high energy electrons or ions, but the origin of this is not well understood. This work studies the evolution of damage in Ar{sup +}-bombarded CuInSe{sub 2} single crystal using Rutherford backscattering/channeling analysis. Ar{sup +} ions of 30 keV were implanted with doses in the range from 10{sup 12} to 3 × 10{sup 16} cm{sup −2} at room temperature. Implantation was found to create two layers of damage: (1) on the surface, caused by preferential sputtering of Se and Cu atoms; (2) at the layer of implanted Ar, possibly consisting of stackingmore » faults and dislocation loops. The damage in the second layer was estimated to be less than 2% of the theoretical prediction suggesting efficient healing of primary implantation defects.« less

Study of the amorphization of surface silicon layers implanted by low-energy helium ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomov, A. A., E-mail: lomov@ftian.ru; Myakon’kikh, A. V.; Oreshko, A. P.

2016-03-15

The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2–5)-keV helium ions to a dose of D = 6 × 10{sup 15}–5 × 10{sup 17} cm{sup –2} have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ(z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 10{sup 16} cm{sup –2} leads to the formation of a 20- to 30-nm-thick amorphizedmore » surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.« less

Study of molybdenum-aluminum interdiffusion kinetics and contact resistance for VLSI applications

NASA Astrophysics Data System (ADS)

Singh, R. N.; Brown, D. M.; Kim, M. J.; Smith, G. A.

1985-12-01

Interdiffusion barrier characteristics of molybdenum thin film with aluminum-1% Si is studied between 733 and 763 K via sheet and contact resistance measurements, Rutherford backscattering spectrometry, secondary ion mass spectrometry, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Al-1% Si thin film couples leads to MoAl12 compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Al-1% Si to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is diffusion controlled and shows parabolic time dependence, incubation periods, and extremely high activation energy value of 5.9 eV. The incubation periods and an high activation energy values are explained by the presence of silicon precipitates at the Mo/Al-1% Si interface. Implications of these observations to VLSI device characteristics are discussed and a safe time-temperature processing regime is proposed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

RBS, TEM and SEM Characterization of Gold Nanoclusters in TiO2(110)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shutthanandan, V; Zhang, Yanwen; Wang, Chong M.

2004-05-01

Nucleation of gold nanoclusters in TiO2(110) single crystal using ion implantation and subsequent annealing were studied by Rutherford backscattering spectrometry /channeling (RBS/C), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Approximately 1000 Au2+/nm2 was implanted at room temperature in TiO2(110) substrates. TEM and SEM measurements revel that rounded nanoclusters were formed during the implantation. In contrast subsequent annealing in air for 10 hours at 1275 K promoted the formation of faceted (rectangular shaped) Au nano structures in TiO2. RBS channeling measurements further reveled that Au atoms randomly occupied in the host TiO2 lattice during the implantation. However, some ofmore » the gold atoms were moved into the Ti lattice position after annealing.« less

MOCVD (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films for high frequency tunable devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumann, P. K.; Kaufman, D. Y.; Im, J.

2001-01-01

We have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films synthesized at 650{sup o}C on Pt/SiO{sub 2}/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700{sup o}C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

Monte Carlo simulations of backscattering process in dislocation-containing SrTiO3 single crystal

NASA Astrophysics Data System (ADS)

Jozwik, P.; Sathish, N.; Nowicki, L.; Jagielski, J.; Turos, A.; Kovarik, L.; Arey, B.

2014-05-01

Studies of defects formation in crystals are of obvious importance in electronics, nuclear engineering and other disciplines where materials are exposed to different forms of irradiation. Rutherford Backscattering/Channeling (RBS/C) and Monte Carlo (MC) simulations are the most convenient tool for this purpose, as they allow one to determine several features of lattice defects: their type, concentration and damage accumulation kinetic. On the other hand various irradiation conditions can be efficiently modeled by ion irradiation method without leading to the radioactivity of the sample. Combination of ion irradiation with channeling experiment and MC simulations appears thus as a most versatile method in studies of radiation damage in materials. The paper presents the results on such a study performed on SrTiO3 (STO) single crystals irradiated with 320 keV Ar ions. The samples were analyzed also by using HRTEM as a complementary method which enables the measurement of geometrical parameters of crystal lattice deformation in the vicinity of dislocations. Once the parameters and their variations within the distance of several lattice constants from the dislocation core are known, they may be used in MC simulations for the quantitative determination of dislocation depth distribution profiles. The final outcome of the deconvolution procedure are cross-sections values calculated for two types of defects observed (RDA and dislocations).

OMVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics (title change from A)

DOE Office of Scientific and Technical Information (OSTI.GOV)

HAN,JUNG; FIGIEL,JEFFREY J.; PETERSEN,GARY A.

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GrdnN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

Surface structure of imidazolium-based ionic liquids: Quantitative comparison between simulations and high-resolution RBS measurements.

PubMed

Nakajima, Kaoru; Nakanishi, Shunto; Lísal, Martin; Kimura, Kenji

2016-03-21

Elemental depth profiles of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([CnMIM][TFSI], n = 4, 6, 8) are measured using high-resolution Rutherford backscattering spectroscopy (HRBS). The profiles are compared with the results of molecular dynamics (MD) simulations. Both MD simulations and HRBS measurements show that the depth profiles deviate from the uniform stoichiometric composition in the surface region, showing preferential orientations of ions at the surface. The MD simulations qualitatively reproduce the observed HRBS profiles but the agreement is not satisfactory. The observed discrepancy is ascribed to the capillary waves. By taking account of the surface roughness induced by the capillary waves, the agreement becomes almost perfect.

Evaluation of chemical conversion material (protective coating) exposed to space environmental conditions

NASA Technical Reports Server (NTRS)

Edwards, D. L.

1993-01-01

This report focuses on the development of an operational Rutherford backscattering spectrometry (RBS) system and shows the application of such a system on a space environmental test. Thin films of aluminum and tantalum were deposited on diamond substrates. These films were anodized and preexposure characterization spectra obtained using RBS and total hemispherical reflectance. The samples were exposed to energetic protons then postexposure characterization spectra was obtained using the same techniques. Conclusions based on the comparison of preexposure and postexposure spectra are presented. RBS comparison spectra show no change in the metal/metal oxide interface, while the comparison reflectance data indicate change. Explanations for this reflectance change are presented in this report.

Determination of the composition of HgCdTe oxide films by neutron activation analysis

NASA Astrophysics Data System (ADS)

Gnade, B.; Simmons, A.; Little, D.; Strong, R.

1987-04-01

The composition of HgCdTe oxides grown by anodic oxidation in a standard KOH/ethylene glycol solution has been determined by neutron activation analysis (NAA). This technique is not hindered by the difficulties normally associated with methods using ion beams or electron beams. Neutron activation analysis has the advantage of being quantitative, and also NAA is not affected by the chemical composition of the matrix. The analysis of the KOH/ethylene glycol oxide film by neutron activation yields Hg:Cd:Te ratios of 0.534:0.19:1, in close agreement with Rutherford backscattering spectroscopy analysis (R.L. Strong et al., J. Vac. Sci. Technol. A4 (4) (1986) 1992).

Amorphous silicon carbide coatings for extreme ultraviolet optics

NASA Technical Reports Server (NTRS)

Kortright, J. B.; Windt, David L.

1988-01-01

Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

Surface structure of imidazolium-based ionic liquids: Quantitative comparison between simulations and high-resolution RBS measurements

NASA Astrophysics Data System (ADS)

Nakajima, Kaoru; Nakanishi, Shunto; Lísal, Martin; Kimura, Kenji

2016-03-01

Elemental depth profiles of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([CnMIM][TFSI], n = 4, 6, 8) are measured using high-resolution Rutherford backscattering spectroscopy (HRBS). The profiles are compared with the results of molecular dynamics (MD) simulations. Both MD simulations and HRBS measurements show that the depth profiles deviate from the uniform stoichiometric composition in the surface region, showing preferential orientations of ions at the surface. The MD simulations qualitatively reproduce the observed HRBS profiles but the agreement is not satisfactory. The observed discrepancy is ascribed to the capillary waves. By taking account of the surface roughness induced by the capillary waves, the agreement becomes almost perfect.

Structural and optical properties of Ga auto-incorporated InAlN epilayers

NASA Astrophysics Data System (ADS)

Taylor, E.; Smith, M. D.; Sadler, T. C.; Lorenz, K.; Li, H. N.; Alves, E.; Parbrook, P. J.; Martin, R. W.

2014-12-01

InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

Determination of migration of ion-implanted Ar and Zn in silica by backscattering spectrometry

NASA Astrophysics Data System (ADS)

Szilágyi, E.; Bányász, I.; Kótai, E.; Németh, A.; Major, C.; Fried, M.; Battistig, G.

2015-03-01

It is well known that the refractive indices of lots of materials can be modified by ion implantation, which is important for waveguide fabrication. In this work the effect of Ar and Zn ion implantation on silica layers was investigated by Rutherford Backscattering Spectrometry (RBS) and Spectroscopic Ellipsometry (SE). Silica layers produced by chemical vapour deposition technique on single crystal silicon wafers were implanted by Ar and Zn ions with a fluence of 1-2 ×1016 Ar/cm2 and 2.5 ×1016 Zn/cm2, respectively. The refractive indices of the implanted silica layers before and after annealing at 300°C and 600°C were determined by SE. The migration of the implanted element was studied by real-time RBS up to 500°C. It was found that the implanted Ar escapes from the sample at 300°C. Although the refractive indices of the Ar-implanted silica layers were increased compared to the as-grown samples, after the annealing this increase in the refractive indices vanished. In case of the Zn-implanted silica layer both the distribution of the Zn and the change in the refractive indices were found to be stable. Zn implantation seems to be an ideal choice for producing waveguides.

Compositional analysis and depth profiling of thin film CrO{sub 2} by heavy ion ERDA and standard RBS: a comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khamlich, S., E-mail: skhamlich@gmail.com; Department of Chemistry, Tshwane University of Technology, Private Bag X 680, Pretoria, 0001; The African Laser Centre, CSIR campus, P.O. Box 395, Pretoria

2012-08-15

Chromium dioxide (CrO{sub 2}) thin film has generated considerable interest in applied research due to the wide variety of its technological applications. It has been extensively investigated in recent years, attracting the attention of researchers working on spintronic heterostructures and in the magnetic recording industry. However, its synthesis is usually a difficult task due to its metastable nature and various synthesis techniques are being investigated. In this work a polycrystalline thin film of CrO{sub 2} was prepared by electron beam vaporization of Cr{sub 2}O{sub 3} onto a Si substrate. The polycrystalline structure was confirmed through XRD analysis. The stoichiometry andmore » elemental depth distribution of the deposited film were measured by ion beam nuclear analytical techniques heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS), which both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Moreover, the analysis carried out highlights the importance of complementary usage of the two techniques to obtain a more complete description of elemental content and depth distribution in thin films. - Graphical abstract: Heavy ion elastic recoil detection analysis (ERDA) and Rutherford backscattering spectrometry (RBS) both have relative advantage over non-nuclear spectrometries in that they can readily provide quantitative information about the concentration and distribution of different atomic species in a layer. Highlights: Black-Right-Pointing-Pointer Thin films of CrO{sub 2} have been grown by e-beam evaporation of Cr{sub 2}O{sub 3} target in vacuum. Black-Right-Pointing-Pointer The composition was determined by heavy ion-ERDA and RBS. Black-Right-Pointing-Pointer HI-ERDA and RBS provided information on the light and heavy elements, respectively.« less

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Dynamic defect annealing in wurtzite MgZnO implanted with Ar ions

NASA Astrophysics Data System (ADS)

Azarov, A. Yu.; Wendler, E.; Du, X. L.; Kuznetsov, A. Yu.; Svensson, B. G.

2015-09-01

Successful implementation of ion beams for modification of ternary ZnO-based oxides requires understanding and control of radiation-induced defects. Here, we study structural disorder in wurtzite ZnO and MgxZn1-xO (x ⩽ 0.3) samples implanted at room and 15 K temperatures with Ar ions in a wide fluence range (5 × 1012-3 × 1016 cm-2). The samples were characterized by Rutherford backscattering/channeling spectrometry performed in-situ without changing the sample temperature. The results show that all the samples exhibit high radiation resistance and cannot be rendered amorphous even for high ion fluences. Increasing the Mg content leads to some damage enhancement near the surface region; however, irrespective of the Mg content, the fluence dependence of bulk damage in the samples displays the so-called IV-stage evolution with a reverse temperature effect for high ion fluences.

Heavy doping of CdTe single crystals by Cr ion implantation

NASA Astrophysics Data System (ADS)

Popovych, Volodymyr D.; Böttger, Roman; Heller, Rene; Zhou, Shengqiang; Bester, Mariusz; Cieniek, Bogumil; Mroczka, Robert; Lopucki, Rafal; Sagan, Piotr; Kuzma, Marian

2018-03-01

Implantation of bulk CdTe single crystals with high fluences of 500 keV Cr+ ions was performed to achieve Cr concentration above the equilibrium solubility limit of this element in CdTe lattice. The structure and composition of the implanted samples were studied using secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) to characterize the incorporation of chromium into the host lattice and to investigate irradiation-induced damage build-up. It was found that out-diffusion of Cr atoms and sputtering of the targets alter the depth distribution and limit concentration of the projectile ions in the as-implanted samples. Appearance of crystallographically oriented, metallic α-Cr nanoparticles inside CdTe matrix was found after implantation, as well as a strong disorder at the depth far beyond the projected range of the implanted ions.

Lattice modification in KTiOPO4 by hydrogen and helium sequentially implantation in submicrometer depth

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

2016-05-01

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO4). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 1016 cm-2, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO4 crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO4 surface from blistering.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Changdong; Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250012; Lu, Fei, E-mail: lufei@sdu.edu.cn

We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO{sub 4}). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 10{sup 16 }cm{sup −2}, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO{sub 4} crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantationmore » produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO{sub 4} surface from blistering.« less

High Zn Content Single-phase RS-MgZnO Suitable for Solar-blind Frequency Applications

NASA Astrophysics Data System (ADS)

Liang, H. L.; Mei, Z. X.; Liu, Z. L.; Guo, Y.; Azarov, A. Yu.; Kuznetsov, A. Yu.; Hallen, A.; Du, X. L.

2010-11-01

Single-phase rock-salt MgZnO films with high Zn content were successfully fabricated on the templates of MgO (111)/α-sapphire (0001) by radio-frequency plasma assisted molecular beam epitaxy. The influence of growth temperature on epitaxy of MgZnO alloy films was investigated by the combined studies of crystal structures, compositions, and optical properties. It is found that the incorporation of Zn atoms into the rock-salt MgZnO films is greatly enhanced at low temperature, confirmed by in-situ reflection high-energy electron diffraction observations and ex-situ X-ray diffraction characterization. Zn fraction in the single-phase rock-salt Mg0.53Zn0.47O film was determined by Rutherford backscattering spectrometry. Optical properties of the films were investigated by transmittance spectroscopy and reflectance spectroscopy, both of which demonstrate the solar-blind band gap and its dependence on Zn content.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

Preparation of conductive gold nanowires in confined environment of gold-filled polymer nanotubes.

PubMed

Mitschang, Fabian; Langner, Markus; Vieker, Henning; Beyer, André; Greiner, Andreas

2015-02-01

Continuous conductive gold nanofibers are prepared via the "tubes by fiber templates" process. First, poly(l-lactide) (PLLA)-stabilized gold nanoparticles (AuNP) with over 60 wt% gold are synthesized and characterized, including gel permeation chromatography coupled with a diode array detector. Subsequent electrospinning of these AuNP with template PLLA results in composite nanofibers featuring a high gold content of 57 wt%. Highly homogeneous gold nanowires are obtained after chemical vapor deposition of 345 nm of poly(p-xylylene) (PPX) onto the composite fibers followed by pyrolysis of the polymers at 1050 °C. The corresponding heat-induced transition from continuous gold-loaded polymer tubes to smooth gold nanofibers is studied by transmission electron microscopy and helium ion microscopy using both secondary electrons and Rutherford backscattered ions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of He implantation on radiation induced segregation in Cu-Au and Ni-Si alloys

NASA Astrophysics Data System (ADS)

Iwase, A.; Rehn, L. E.; Baldo, P. M.; Funk, L.

Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.

Surface segregation in a binary mixture of ionic liquids: Comparison between high-resolution RBS measurements and moleculardynamics simulations.

PubMed

Nakajima, Kaoru; Nakanishi, Shunto; Chval, Zdeněk; Lísal, Martin; Kimura, Kenji

2016-11-14

Surface structure of equimolar mixture of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C 2 C 1 Im][Tf 2 N]) and 1-ethyl-3-methylimidazolium tetrafluoroborate ([C 2 C 1 Im][BF 4 ]) is studied using high-resolution Rutherford backscattering spectroscopy (HRBS) and molecular dynamics (MD) simulations. Both HRBS and MD simulations show enrichment of [Tf 2 N] in the first molecular layer although the degree of enrichment observed by HRBS is more pronounced than that predicted by the MD simulation. In the subsurface region, MD simulation shows a small depletion of [Tf 2 N] while HRBS shows a small enrichment here. This discrepancy is partially attributed to the artifact of the MD simulations. Since the number of each ion is fixed in a finite-size simulation box, surface enrichment of particular ion results in its artificial depletion in the subsurface region.

Surface segregation in a binary mixture of ionic liquids: Comparison between high-resolution RBS measurements and molecular dynamics simulations

NASA Astrophysics Data System (ADS)

Nakajima, Kaoru; Nakanishi, Shunto; Chval, Zdeněk; Lísal, Martin; Kimura, Kenji

2016-11-01

Surface structure of equimolar mixture of 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C2C1Im][Tf2N]) and 1-ethyl-3-methylimidazolium tetrafluoroborate ([C2C1Im][BF4]) is studied using high-resolution Rutherford backscattering spectroscopy (HRBS) and molecular dynamics (MD) simulations. Both HRBS and MD simulations show enrichment of [Tf2N] in the first molecular layer although the degree of enrichment observed by HRBS is more pronounced than that predicted by the MD simulation. In the subsurface region, MD simulation shows a small depletion of [Tf2N] while HRBS shows a small enrichment here. This discrepancy is partially attributed to the artifact of the MD simulations. Since the number of each ion is fixed in a finite-size simulation box, surface enrichment of particular ion results in its artificial depletion in the subsurface region.

Epitaxial cuprate superconductor/ferroelectric heterostructures.

PubMed

Ramesh, R; Inam, A; Chan, W K; Wilkens, B; Myers, K; Remschnig, K; Hart, D L; Tarascon, J M

1991-05-17

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.

Stopping cross sections of He + ions in bismuth

NASA Astrophysics Data System (ADS)

Kuldeep; Jain, Animesh K.

1985-06-01

The stopping cross sections, ɛ( E), of He + ions in bismuth have been measured by Rutherford backscattering spectrometry (RBS) at incident energies ranging from E = 1.6-3.4 MeV. The energy loss of He + ions and thicknesses of the bismuth films deposited on aluminium substrates were determined from the RBS spectra at each energy for scattering angles of 130° and 165°. The film thicknesses of some of the samples were also measured by weighing and the results compared with those from RBS. Parameters for energy dependence of stopping cross section in the Varelas-Biersack interpolation formula have been obtained for bismuth from a fit to all the available experimental data. Accuracy of our method based on RBS is demonstrated by measurements on copper, for which ɛ( E) is already well studied. It is also shown that reliable ɛ( E) values may be obtained even on samples with non-uniform film thickness.

Self-Assembled Gold Nano-Ripple Formation by Gas Cluster Ion Beam Bombardment.

PubMed

Tilakaratne, Buddhi P; Chen, Quark Y; Chu, Wei-Kan

2017-09-08

In this study, we used a 30 keV argon cluster ion beam bombardment to investigate the dynamic processes during nano-ripple formation on gold surfaces. Atomic force microscope analysis shows that the gold surface has maximum roughness at an incident angle of 60° from the surface normal; moreover, at this angle, and for an applied fluence of 3 × 10 16 clusters/cm², the aspect ratio of the nano-ripple pattern is in the range of ~50%. Rutherford backscattering spectrometry analysis reveals a formation of a surface gradient due to prolonged gas cluster ion bombardment, although the surface roughness remains consistent throughout the bombarded surface area. As a result, significant mass redistribution is triggered by gas cluster ion beam bombardment at room temperature. Where mass redistribution is responsible for nano-ripple formation, the surface erosion process refines the formed nano-ripple structures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazareth, A.S.; Sood, D.K.; Zmood, R.B.

A focusing grid broad beam Kaufman source, using argon ions on a target of nominal composition Nd{sub 2}Fe{sub 14}B has been employed to sputter deposit magnetic thin films of thicknesses ranging from 800 {angstrom} to 1300 {angstrom} on silicon-(111) substrates at room temperature. These films were characterized for their composition depth profile by Rutherford Backscattering Spectroscopy, while x-ray diffraction was used to study the crystallographic structure. Due to a close match between (111) Si with (220) Nd{sub 2}Fe{sub 14}B lattice spacings, preferred crystallographic texturing was expected, and experimental results showed a greatly enhanced (220) texture. The degradation in magnetic propertiesmore » was attributed to the presence of oxygen in the films as indicated by concentration depth profiles. It is premised that another significant role of oxygen may be to relieve the misfit strain across the interface by its incorporation within the Nd{sub 2}Fe{sub 14}B phase.« less

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

DOE PAGES

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

2016-02-01

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Oxygen depth profiling by resonant RBS in NiTi after plasma immersion ion implantation

NASA Astrophysics Data System (ADS)

Mändl, S.; Lindner, J. K. N.

2006-08-01

NiTi exhibits super-elastic as well as shape-memory properties, which results in a large potential application field in biomedical technology. Using oxygen ion implantation at elevated temperatures, it is possible to improve the biocompatibility. Resonant Rutherford backscattering spectroscopy (RRBS) is used to investigate the oxygen depth profile obtained after oxygen plasma immersion ion implantation (PIII) at 25 kV and 400-600 °C. At all temperatures, a layered structure consisting of TiO2/Ni3Ti/NiTi was found with sharp interfaces while no discernible content of oxygen inside Ni3Ti or nickel in TiO2 was found. These data are compatible with a titanium diffusion from the bulk towards the implanted oxygen.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects

NASA Astrophysics Data System (ADS)

Han, I.-H.; Lee, I.-S.; Song, J.-H.; Lee, M.-H.; Park, J.-C.; Lee, G.-H.; Sun, X.-D.; Chung, S.-M.

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO3 concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Surface analysis of space telescope material specimens

NASA Technical Reports Server (NTRS)

Fromhold, A. T.; Daneshvar, K.

1985-01-01

Qualitative and quantitative data on Space Telescope materials which were exposed to low Earth orbital atomic oxygen in a controlled experiment during the 41-G (STS-17) mission were obtained utilizing the experimental techniques of Rutherford backscattering (RBS), particle induced X-ray emission (PIXE), and ellipsometry (ELL). The techniques employed were chosen with a view towards appropriateness for the sample in question, after consultation with NASA scientific personnel who provided the material specimens. A group of eight samples and their controls selected by NASA scientists were measured before and after flight. Information reported herein include specimen surface characterization by ellipsometry techniques, a determination of the thickness of the evaporated metal specimens by RBS, and a determination of trace impurity species present on and within the surface by PIXE.

RBS Depth Profiling Analysis of (Ti, Al)N/MoN and CrN/MoN Multilayers.

PubMed

Han, Bin; Wang, Zesong; Devi, Neena; Kondamareddy, K K; Wang, Zhenguo; Li, Na; Zuo, Wenbin; Fu, Dejun; Liu, Chuansheng

2017-12-01

(Ti, Al)N/MoN and CrN/MoN multilayered films were synthesized on Si (100) surface by multi-cathodic arc ion plating system with various bilayer periods. The elemental composition and depth profiling of the films were investigated by Rutherford backscattering spectroscopy (RBS) using 2.42 and 1.52 MeV Li 2+ ion beams and different incident angles (0°, 15°, 37°, and 53°). The microstructures of (Ti, Al)N/MoN multilayered films were evaluated by X-ray diffraction. The multilayer periods and thickness of the multilayered films were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HR-TEM) and then compared with RBS results.

Characterization of a silver-incorporated calcium phosphate film by RBS and its antimicrobial effects.

PubMed

Han, I-H; Lee, I-S; Song, J-H; Lee, M-H; Park, J-C; Lee, G-H; Sun, X-D; Chung, S-M

2007-09-01

A thin calcium phosphate film was synthesized on both commercially pure Ti and Si wafers by electron beam evaporation of hydroxyapatite as an evaporant with simultaneous Ar ion beam bombardments. Silver was introduced into an ion-beam-assisted deposition of a calcium phosphate thin film for antimicrobial effect. The amount of incorporated silver ions was controlled by immersing calcium-phosphate-coated samples in different AgNO(3) concentrations, and Rutherford backscattering spectrometry (RBS) was employed to measure the amounts of substituted silver. The higher concentration of silver in the calcium phosphate film was more effective in reducing the bacteria of Escherichia coli ATCC 8739 and Streptococcus mutans OMZ 65 on contact with respect to controls.

Growth and properties of GaSbBi alloys

NASA Astrophysics Data System (ADS)

Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Yu, K. M.; Scanlon, D. O.; Buckeridge, J.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

2013-09-01

Molecular-beam epitaxy has been used to grow GaSb1-xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98% of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb0.95Bi0.05, corresponding to a reduction of 36 meV/%Bi or 210 meV per 0.01 Å change in lattice constant.

Silicon thin film homoepitaxy by rapid thermal atmospheric-pressure chemical vapor deposition (RT-APCVD)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monna, R.; Angermeier, D.; Slaoui, A.

1996-12-01

The homoepitaxy of thin film silicon layers in a horizontal, atmospheric pressure RTCVD reactor is reported. The experiments were conducted in a temperature range from 900 C to 1,300 C employing the precursor trichlorosilane (TCS) and the dopant trichloroborine (TCB) diluted in hydrogen. The epilayers were evaluated by Nomarski microscopy, Rutherford backscattering spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the thin film were analyzed by sheet resistance and four point probe characterization methods. The authors propose that the responsible mechanisms for the observed growth decline at higher precursor concentration in hydrogen are due to the reaction ofmore » the gaseous HCl with the silicon surface and the supersaturation of silicon.« less

In-air RBS measurements at the LAMFI external beam setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, T. F.; Added, N.; Moro, M. V.

2014-11-11

This work describes new developments in the external beam setup of the Laboratory of Material Analysis with Ion Beams of the University of São Paulo (LAMFI-USP). This setup was designed to be a versatile analytical station to analyze a broad range of samples. In recent developments, we seek the external beam Rutherford Backscattering Spectroscopy (RBS) analysis to complement the Particle Induced X-ray Emission (PIXE) measurements. This work presents the initial results of the external beam RBS analysis as well as recent developments to improve the energy resolution RBS measurements, in particular tests to seek for sources of resolution degradation. Thesemore » aspects are discussed and preliminary results of in-air RBS analysis of some test samples are presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wendav, Torsten, E-mail: wendav@physik.hu-berlin.de; Fischer, Inga A.; Oehme, Michael

The group-IV semiconductor alloy Ge{sub 1−x−y}Si{sub x}Sn{sub y} has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge{sub 1−x−y}Si{sub x}Sn{sub y} alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions aboutmore » the optical transition energy.« less

Cluster Tool for In Situ Processing and Comprehensive Characterization of Thin Films at High Temperatures.

PubMed

Wenisch, Robert; Lungwitz, Frank; Hanf, Daniel; Heller, René; Zscharschuch, Jens; Hübner, René; von Borany, Johannes; Abrasonis, Gintautas; Gemming, Sibylle; Escobar-Galindo, Ramon; Krause, Matthias

2018-06-13

A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (∼60 nm)/Ag (∼30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 °C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.

Visible-light-responsive ZnCuO nanoparticles: benign photodynamic killers of infectious protozoans

PubMed Central

Nadhman, Akhtar; Nazir, Samina; Khan, Malik Ihsanullah; Ayub, Attiya; Muhammad, Bakhtiar; Khan, Momin; Shams, Dilawar Farhan; Yasinzai, Masoom

2015-01-01

Human beings suffer from several infectious agents such as viruses, bacteria, and protozoans. Recently, there has been a great interest in developing biocompatible nanostructures to deal with infectious agents. This study investigated benign ZnCuO nanostructures that were visible-light-responsive due to the resident copper in the lattice. The nanostructures were synthesized through a size-controlled hot-injection process, which was adaptable to the surface ligation processes. The nanostructures were then characterized through transmission electron microscopy, X-ray diffraction, diffused reflectance spectroscopy, Rutherford backscattering, and photoluminescence analysis to measure crystallite nature, size, luminescence, composition, and band-gap analyses. Antiprotozoal efficiency of the current nanoparticles revealed the photodynamic killing of Leishmania protozoan, thus acting as efficient metal-based photosensitizers. The crystalline nanoparticles showed good biocompatibility when tested for macrophage toxicity and in hemolysis assays. The study opens a wide avenue for using toxic material in resident nontoxic forms as an effective antiprotozoal treatment. PMID:26604755

Ion beam analyses of radionuclide migration in heterogeneous rocks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alonso, Ursula; Missana, Tiziana; Garcia-Gutierrez, Miguel

2013-07-18

The migration of radionuclides (RN) in the environment is a topic of general interest, for its implications on public health, and it is an issue for the long-term safety studies of deep geological repositories (DGR) for high-level radioactive waste. The role played by colloids on RN migration is also of great concern. Diffusion and sorption are fundamental mechanisms controlling RN migration in rocks and many experimental approaches are applied to determine transport parameters for low sorbing RN in homogeneous rocks. However, it is difficult to obtain relevant data for high sorbing RN or colloids, for which diffusion lengths are extremelymore » short, or within heterogeneous rocks, where transport might be different in different minerals. The ion beam techniques Rutherford Backscattering Spectrometry (RBS) and micro-Particle Induced X-Ray Emission ({mu}PIXE), rarely applied in the field, were selected for their micro-analytical potential to study RN diffusion and surface retention within heterogeneous rocks. Main achievements obtained during last 12 years are highlighted.« less

Total elemental composition of soils contaminated with wastewater irrigation by combining IBA techniques

NASA Astrophysics Data System (ADS)

Huerta, L.; Contreras-Valadez, R.; Palacios-Mayorga, S.; Miranda, J.; Calva-Vasquez, G.

2002-04-01

The purpose of this work was to obtain the total elemental composition of agricultural soils irrigated with well water and wastewater. The studied area is located in the Valle del Mezquital in Hidalgo State, Mexico. The studied soils were collected, every two months during one year. Particle induced X-ray emission (PIXE), Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) were applied for elemental analysis. PIXE analyses gave elemental contents of major and trace elements (Al, Si, P, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Rb, Sr, Y, Zr, and Pb). Total concentrations of Na, Mg, C, N and O were obtained by RBS and NRA. PIXE analyses were carried out with 2 MeV proton beams, RBS with 2 MeV helium ions, while NRA was applied with a 1.2 MeV deuterium beam. Results indicated that heavy metal total concentrations exceed the critical soil total concentrations according to environmental regulations.

Confinement and Ordering of Au Nanorods in Polymer Films

NASA Astrophysics Data System (ADS)

Hore, Michael J. A.; Mills, Eric; Liu, Yu; Composto, Russell J.

2009-03-01

Ordered arrays of gold nanorods (Au NRs) possess interesting optical properties that might be utilized in future devices. Au NRs functionalized with a poly(ethylene glycol)-thiol brush are incorporated into homopolymer or block copolymer (BCP) films. NR distribution and orientational correlations are studied as a function of nanorod concentration and spacial confinement via Rutherford backscattering spectrometry (RBS) and transmission electron microscopy, respectively. In particular, differences in the degree of nanorod ordering are presented for PMMA homopolymer films (d ˜ 45 nm) versus PS-b-PMMA BCP films (L/2 ˜ 40 nm), where higher ordering is seen in the case of BCP films. At moderate volume fractions of NRs, φ = 1% to 10%, the degree of ordering is moderate, and increases with increasing φ . However, coexistence between regions of higher ordering and isotropic orientations is observed. In addition to the planar confinement considered above, orientation of Au NRs confined to cylindrical P2VP domains is studied in PS-b-P2VP BCP films.

Kinetic mechanism of the thermal-induced self-organization of Au/Si nanodroplets on Si(100): Size and roughness evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruffino, F.; Canino, A.; Grimaldi, M. G.

Very thin Au layer was deposited on Si(100) using the sputtering technique. By annealing at 873 K Au/Si nanodroplets were formed and their self-organization was induced changing the annealing time. The evolution of droplet size distribution, center-to-center distance distribution, and droplet density as a function of the annealing time at 873 K was investigated by Rutherford backscattering spectrometry, atomic force microscopy (AFM), and scanning electron microscopy. As a consequence of such study, the droplet clustering is shown to be a ripening process of hemispherical three-dimensional structures limited by the Au surface diffusion. The application of the ripening theory allowed usmore » to calculate the surface diffusion coefficient and all other parameters needed to describe the entire process. Furthermore, the AFM measurements allowed us to study the roughness evolution of the sputtered Au thin film and compare the experimental data with the dynamic scaling theories of growing interfaces.« less

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

NASA Technical Reports Server (NTRS)

Chen, C. L.; Feng, H. H.; Zhang, Z.; Brazdeikis, A.; Miranda, F. A.; VanKeuls, F. W.; Romanofsky, R. R.; Huang, Z. J.; Liou, Y.; Chu, W. K.;

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

NASA Technical Reports Server (NTRS)

Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.;

Laboratory studies of charged particle erosion of SO2 ice and applications to the frosts of Io

NASA Technical Reports Server (NTRS)

Lanzerotti, L. J.; Brown, W. L.; Augustyniak, W. M.; Johnson, R. E.; Armstrong, T. P.

1982-01-01

The removal and/or redistribution of SO2 frosts on the surface of the first Galilean satellite, Io, can occur through the erosion of these frosts by the magnetosphere particle environment of the satellite. The energy, species, and temperature dependence of the erosion rates of SO2 ice films by charged particles have been studied in laboratory experiments. Rutherford backscattering and thin film techniques are used in the experiments. The ice temperature is varied between about 10 K and the sublimation temperature. The erosion rates are found to have a temperature-independent and a temperature-dependent regime and to be much greater, for 10-2000 keV ions, than those predicted by the usual sputtering process. The laboratory results are used together with measured magnetosphere particle fluxes in the vicinity of Io to estimate the erosion rates of SO2 ice films from the satellite and implications therefrom on an SO2 atmosphere on Io.

Characterization of Noble Gas Ion Beam Fabricated Single Molecule Nanopore Detectors

NASA Astrophysics Data System (ADS)

Rollings, Ryan; Ledden, Bradley; Shultz, John; Fologea, Daniel; Li, Jiali; Chervinsky, John; Golovchenko, Jene

2006-03-01

Nanopores fabricated with low energy noble gas ion beams in a silicon nitride membrane can be employed as the fundamental element of single biomolecule detection and characterization devices [1,2]. With the help of X-ray Photoelectron Spectroscopy (XPS) and Rutherford Backscattering (RBS), we demonstrate that the electrical noise properties, and hence ultimate sensitivity of nanopore single molecule detectors depends on ion beam species and nanopore annealing conditions. .1. Li, J., D. Stein, C. McMullan, D. Branton, M.J. Aziz, and J.A. Golovchenko, Ion-beam sculpting at nanometre length scales. Nature, 2001. 412(12 July): p. 166-169. 2. Li, J., M. Gershow, D. Stein, E. Brandin, and J.A. Golovchenko, DNA Molecules and Configurations in a Solid-state Nanopore Microscope. Nature Materials, 2003. 2: p. 611-615.

Rapid annealing of iron implanted Hg(1-x)Cd(x)Te

NASA Astrophysics Data System (ADS)

Kalish, Rafael

1990-03-01

Different Rapid Thermal Annealing techniques were employed to achieve damage removal and electrical activation of dopants in ion implanted Hg(1-x)Cd(x)Te (x = 0.2, 0.3). As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth (AMEBA) which was developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements.

Modified Bridgman-Stockbarger growth and characterization of LiInSe{sub 2} single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayakumar, P., E-mail: ramasamyp@ssn.edu.in; Magesh, M., E-mail: ramasamyp@ssn.edu.in; Arunkumar, A., E-mail: ramasamyp@ssn.edu.in

2014-04-24

The LiInSe{sub 2} polycrystalline materials were successfully synthesized from melt and temperature oscillation method. 8 mm diameter and 32 mm length single crystal was grown from Bridgman-Stockbarger method with steady ampoule rotation. Crystalline phase was confirmed by powder XRD pattern. Thermo gravimetric and differential thermal analysis confirms that the melting point of the grown crystal is 897°C. Rutherford backscattering analysis (RBS) gives the crystal composition as Li{sub 0.8}In{sub 1.16}Se{sub 2.04}. The crystalline perfection of the grown crystal was analyzed by High resolution X-ray diffraction measurements (HRXRD). The electrical properties of the grown crystal were analyzed by Hall effect measurements andmore » it confirms the n-type semiconducting nature.« less

Changes in local surface structure and Sr depletion in Fe-implanted SrTiO3 (001)

NASA Astrophysics Data System (ADS)

Lobacheva, O.; Yiu, Y. M.; Chen, N.; Sham, T. K.; Goncharova, L. V.

2017-01-01

Local surface structure of single crystal strontium titanate SrTiO3 (001) samples implanted with Fe in the range of concentrations between 2 × 1014 to 2 × 1016 Fe/cm2 at 30 keV has been investigated. In order to facilitate Fe substitution (doping), implanted samples were annealed in oxygen at 350 °C. Sr depletion was observed from the near-surface layers impacted by the ion-implantation process, as revealed by Rutherford Backscattering Spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray Absorption Near Edge Spectroscopy (XANES), and Atomic Force Microscopy (AFM). Hydrocarbon contaminations on the surface may contribute to the mechanisms of Sr depletion, which have important implications for Sr(Ti1-xFex)O3-δ materials in gas sensing applications.

RBS and PIXE analysis of chlorine contamination in ALD-Grown TiN films on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meersschaut, J.; Witters, T.; Kaeyhkoe, M.

2013-04-19

The performance, strengths and limitations of RBS and PIXE for the characterization of trace amounts of Cl in TiN thin films are critically compared. The chlorine atomic concentration in ALD grown TiN thin films on Si is determined for samples grown at temperatures ranging from 350 Degree-Sign C to 550 Degree-Sign C. We show that routine Rutherford backscattering spectrometry measurements (1.5 MeV He{sup +}) and PIXE measurements (1.5 MeV H{sup +}) on 20 nm thick TiN films allow one to determine the Cl content down to 0.3 at% with an absolute statistical accuracy reaching 0.03 at%. Possible improvements to pushmore » the sensitivity limit for both approaches are proposed.« less

Incorporation of hydrogen in CuInSe{sub 2}: Improvements of the structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakushev, M. V.; Ogorodnikov, I. I.; Volkov, V. A.

2011-09-15

CuInSe{sub 2} single crystals were ion implanted with a dose of 3 x 10{sup 16} cm{sup -2} by 2.5 keV H{sup +} at 150 and 250 deg. C Before and after the implantation the crystals were analyzed by Rutherford backscattering/channeling (RBS/C) along the <112> axis using 2 MeV He{sup +}. The RBS/C spectra indicate that the implantation at 150 deg. C introduces a layer of radiation damage, whereas after the implantation at 250 deg. C no structural deterioration of the lattice can be seen. Quite the contrary, the RBS/C spectra reveal a considerable decrease in the dechanneling parameters suggesting improvementsmore » in the lattice structural quality attributed to the incorporation of hydrogen.« less

Structural modification of poly(methyl methacrylate) by proton irradiation

NASA Astrophysics Data System (ADS)

Choi, H. W.; Woo, H. J.; Hong, W.; Kim, J. K.; Lee, S. K.; Eum, C. H.

2001-01-01

A general survey is presented on the structural modification of poly(methyl methacrylate) (PMMA) by proton implantation. The implanted PMMA films were characterized by FT-IR attenuated total reflection (FT-IR ATR), Raman, Rutherford backscattering spectroscopy (RBS), gel permeation chromatography (GPC) and surface profiling. The ion fluence of 350 keV protons ranged from 2×10 14 to 1×10 15 ions/cm 2. The IR and Raman spectra showed the reduction of peaks from the pendant group of PMMA. The change of absorption and composition was observed by UV-VIS and RBS, respectively. These results showed that the pendant group is readily decomposed and eliminated by proton irradiation. The change of molecular weight distribution was also measured by GPC and G-value of scission was estimated to be 0.67.

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

NASA Technical Reports Server (NTRS)

Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

NASA Technical Reports Server (NTRS)

Jenkins, Phillip P.; Hepp, Aloysius F.; Power, Michael B.; Macinnes, Andrew N.; Barron, Andrew R.

1993-01-01

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high T/sub c/ bulk material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dijkkamp, D.; Venkatesan, T.; Wu, X.D.

We report the first successful preparation of thin films of Y-Ba-Cu-O superconductors using pulsed excimer laser evaporation of a single bulk material target in vacuum. Rutherford backscattering spectrometry showed the composition of these films to be close to that of the bulk material. Growth rates were typically 0.1 nm per laser shot. After an annealing treatment in oxygen the films exhibited superconductivity with an onset at 95 K and zero resistance at 85 and 75 K on SrTiO/sub 3/ and Al/sub 2/O/sub 3/ substrates, respectively. This new deposition method is relatively simple, very versatile, and does not require the usemore » of ultrahigh vacuum techniques.« less

Bi flux-dependent MBE growth of GaSbBi alloys

DOE PAGES

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; ...

2015-03-05

The incorporation of Bi in GaSb 1-xBi x alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h⁻¹). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0 < x ≤ 4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorptionmore » decreases linearly with increasing Bi content with a reduction of ~32 meV/%Bi.« less

Electrical-pulse-induced resistivity modulation in Pt/TiO2-δ/Pt multilayer device related to nanoionics-based neuromorphic function

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Tsuchiya, Takashi; Takayanagi, Makoto; Terabe, Kazuya; Higuchi, Tohru

2017-06-01

Resistivity modulation behavior in Pt/TiO2-δ/Pt multilayer devices was investigated in terms of nanoionics-based neuromorphic function. The current relaxation behavior, which corresponds to short-term and long-term memorization in neuromorphic function, was analyzed using electrical pulses. In contrast to the huge difference in ionic conductivity for bulk crystal materials of TiO2-δ and WO3, the difference in the relaxation behavior was small. Rutherford backscattering spectrometry and hydrogen forward scattering spectrometry revealed that the TiO2-δ thin film contained 5.6 at. % of protons. This indicates that the neuromorphic function in TiO2-δ-based devices is caused by extrinsic proton transport, presumably through the grain boundary.

Amorphous metallizations for high-temperature semiconductor device applications

NASA Technical Reports Server (NTRS)

Wiley, J. D.; Perepezko, J. H.; Nordman, J. E.; Kang-Jin, G.

1981-01-01

The initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.

Analysis of Picosecond Pulsed Laser Melted Graphite

DOE R&D Accomplishments Database

Steinbeck, J.; Braunstein, G.; Speck, J.; Dresselhaus, M. S.; Huang, C. Y.; Malvezzi, A. M.; Bloembergen, N.

1986-12-01

A Raman microprobe and high resolution TEM have been used to analyze the resolidified region of liquid carbon generated by picosecond pulse laser radiation. From the relative intensities of the zone center Raman-allowed mode for graphite at 1582 cm{sup -1} and the disorder-induced mode at 1360 cm{sup -1}, the average graphite crystallite size in the resolidified region is determined as a function of position. By comparison with Rutherford backscattering spectra and Raman spectra from nanosecond pulsed laser melting experiments, the disorder depth for picosecond pulsed laser melted graphite is determined as a function of irradiating energy density. Comparisons of TEM micrographs for nanosecond and picosecond pulsed laser melting experiments show that the structure of the laser disordered regions in graphite are similar and exhibit similar behavior with increasing laser pulse fluence.

Characterization of conductive Al-doped ZnO thin films for plasmonic applications

NASA Astrophysics Data System (ADS)

Masouleh, F. F.; Sinno, I.; Buckley, R. G.; Gouws, G.; Moore, C. P.

2018-02-01

Highly conductive and transparent Al-doped zinc oxide films were produced by RF magnetron sputtering for plasmonic applications in the infrared region of the spectrum. These films were characterized using Fourier transform infrared spectroscopy, the Hall effect, Rutherford backscattering spectroscopy and spectral data analysis. Analysis of the results shows a carrier concentration of up to 2.6 × 1020 cm-3, as well as transmission over 80% near the plasma frequency where plasmonic properties are expected. The plasma frequency was calculated from the spectroscopy measurements and subsequent data analysis, and was in agreement with the results from the Hall effect measurements and the free electron gas (Drude) model. Based on these results, the Al-doped zinc oxide thin films are well-suited for plasmonic applications in the infrared region.

Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Šiljegović, M.; Bibić, N.

2012-05-01

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar+ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 °C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 × 1015 and 2 × 1016 ions/cm2. The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 × 1016 ions/cm2. It is also observed that the mean crystallite size decreases with the increasing ion fluence.

Surface modification of single crystal LiTaO3 by H and He implantation

NASA Astrophysics Data System (ADS)

Ma, Changdong; Lu, Fei; Jin, Lei; Xu, Bo; Fan, Ranran

2017-02-01

Defects production and evolution in H and He ions co-implanted LiTaO3 under different implantation order (H + He and He + H) are investigated. Rutherford backscattering spectrometry (RBS), infrared (IR) spectroscopy and transmission electron microscopy (TEM) are used to study the lattice damage, composition and structure change in the buried damage region. Obvious differences of ions aggregation mechanism are found in H and He implanted LiTaO3. Blistering or splitting of LiTaO3 is more easily achieved in the case where He is implanted first compared to the reverses case. Significant damage enhancement and micro-fractures are observed in samples with He preimplant. The dispersed damage in H-first sample is due to the destruction by He post-bombardment of H-clusters. This order effect indicates the strong aggregation and trapping ability of He ions and He bubbles. The effect of coimplantation parameters on the cleaving of LiTaO3 is discussed.

Effect of Thickness on the Structure, Composition and Properties of Titanium Nitride Nano-Coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez, Gustavo; Shutthanandan, V.; Thevuthasan, Suntharampillai

2014-05-05

Titanium nitride (TiNx) coatings were grown by magnetron sputtering onto Si(1 0 0) substrates by varying time of deposition to produce coatings with variable thickness (dTiN) in the range of 20-120 nm. TiNx coatings were characterized by studying their structure, composition, and mechanical properties. Nuclear reaction analysis (NRA) combined with Rutherford backscattering spectrometry (RBS) analyses indicate that the grown coatings were stoichiometric TiN. Grazing incidence X-ray diffraction (GIXRD) measurements indicate that the texturing of TiN coatings changes as a function of dTiN. The (1 1 1) and (0 0 2) peaks appear initially; (1 1 1) becomes intense while (0more » 0 2) disappears with increasing dTiN. Dense, columnar grain structure was evident for all the coatings in electron microscopy analyses. The residual stress for TiN coatings with dTiN~120 nm was 1.07 GPa in compression while thinner samples exhibit higher values of stress.« less

Perfect Composition Depth Profiling of Ionic Liquid Surfaces Using High-resolution RBS/ERDA.

PubMed

Nakajima, Kaoru; Zolboo, Enkhbayar; Ohashi, Tomohiro; Lísal, Martin; Kimura, Kenji

2016-01-01

In order to reveal the surface structures of large molecular ionic liquids (ILs), the near-surface elemental depth distributions of 1-alkyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide ([C n C 1 Im][Tf 2 N], n = 2, 6, 10) were studied using high-resolution Rutherford backscattering spectroscopy (HRBS) in combination with high-resolution elastic recoil detection analysis (HR-ERDA). The elemental depth profiles of all constituent elements, including hydrogen, were derived from HR-ERDA/HRBS measurements, so that the profiles would reproduce both HR-ERDA and HRBS spectra simultaneously. The derived elemental depth profiles agree with state-of-the-art molecular dynamics simulations, indicating the feasibility of this method. A controversy concerning the preferential orientation of [C 2 C 1 Im] at the surface has been resolved by this new combination analysis; namely, the [C 2 C 1 Im] cation has a preferential orientation with the ethyl chain pointing towards the vacuum in the topmost molecular layer.

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE.

PubMed

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny Domagoj; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-09-06

The aim of this work is to investigate the feasibility of ion beam analysis techniques for monitoring swift heavy ion track formation. First, the use of the in situ Rutherford backscattering spectrometry in channeling mode to observe damage build-up in quartz SiO₂ after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO₃, quartz SiO₂, a-SiO₂, and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO₂, surface stoichiometry remained unchanged. Third, the usability of high resolution particle induced X-ray spectroscopy for observation of electronic dynamics during early stages of ion track formation is shown.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y2SiO5 crystal

NASA Astrophysics Data System (ADS)

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; Qiao, Mei; Wang, Tie-Jun; Zhang, Jing; Liu, Yong; Liu, Peng; Zhu, Zi-Hua; Wang, Xue-Lin

2017-09-01

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this paper, we used 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated Y2SiO5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prism coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. 6 MeV C ions with a fluence of 1 × 1015 ion/cm2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.

Interfacial thermal degradation in inverted organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenbank, William; Hirsch, Lionel; Wantz, Guillaume

2015-12-28

The efficiency of organic photovoltaic (OPV) solar cells is constantly improving; however, the lifetime of the devices still requires significant improvement if the potential of OPV is to be realised. In this study, several series of inverted OPV were fabricated and thermally aged in the dark in an inert atmosphere. It was demonstrated that all of the devices undergo short circuit current-driven degradation, which is assigned to morphology changes in the active layer. In addition, a previously unreported, open circuit voltage-driven degradation mechanism was observed that is highly material specific and interfacial in origin. This mechanism was specifically observed inmore » devices containing MoO{sub 3} and silver as hole transporting layers and electrode materials, respectively. Devices with this combination were among the worst performing devices with respect to thermal ageing. The physical origins of this mechanism were explored by Rutherford backscattering spectrometry and atomic force microscopy and an increase in roughness with thermal ageing was observed that may be partially responsible for the ageing mechanism.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Napari, Mari, E-mail: mari.napari@jyu.fi; Malm, Jari; Lehto, Roope

ZnO films were grown by atomic layer deposition at 35 °C on poly(methyl methacrylate) substrates using diethylzinc and water precursors. The film growth, morphology, and crystallinity were studied using Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, atomic force microscopy, scanning electron microscopy, and x-ray diffraction. The uniform film growth was reached after several hundreds of deposition cycles, preceded by the precursor penetration into the porous bulk and island-type growth. After the full surface coverage, the ZnO films were stoichiometric, and consisted of large grains (diameter 30 nm) with a film surface roughness up to 6 nm (RMS). The introduction of Al{sub 2}O{submore » 3} seed layer enhanced the initial ZnO growth substantially and changed the surface morphology as well as the crystallinity of the deposited ZnO films. Furthermore, the water contact angles of the ZnO films were measured, and upon ultraviolet illumination, the ZnO films on all the substrates became hydrophilic, independent of the film crystallinity.« less

Microstructural evolution of ion-irradiated sol–gel-derived thin films

DOE PAGES

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.; ...

2017-07-17

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

Reverse osmosis membrane composition, structure and performance modification by bisulphite, iron(III), bromide and chlorite exposure.

PubMed

Ferrer, O; Gibert, O; Cortina, J L

2016-10-15

Reverse osmosis (RO) membrane exposure to bisulphite, chlorite, bromide and iron(III) was assessed in terms of membrane composition, structure and performance. Membrane composition was determined by Rutherford backscattering spectrometry (RBS) and membrane performance was assessed by water and chloride permeation, using a modified version of the solution-diffusion model. Iron(III) dosage in presence of bisulphite led to an autooxidation of the latter, probably generating free radicals which damaged the membrane. It comprised a significant raise in chloride passage (chloride permeation coefficient increased 5.3-5.1 fold compared to the virgin membrane under the conditions studied) rapidly. No major differences in terms of water permeability and membrane composition were observed. Nevertheless, an increase in the size of the network pores, and a raise in the fraction of aggregate pores of the polyamide (PA) layer were identified, but no amide bond cleavage was observed. These structural changes were therefore, in accordance with the transport properties observed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Monitoring Ion Track Formation Using In Situ RBS/c, ToF-ERDA, and HR-PIXE

PubMed Central

Karlušić, Marko; Fazinić, Stjepko; Siketić, Zdravko; Tadić, Tonči; Cosic, Donny Domagoj; Božičević-Mihalić, Iva; Zamboni, Ivana; Jakšić, Milko; Schleberger, Marika

2017-01-01

The aim of this work is to investigate the feasibility of ion beam analysis techniques for monitoring swift heavy ion track formation. First, the use of the in situ Rutherford backscattering spectrometry in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2, and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged. Third, the usability of high resolution particle induced X-ray spectroscopy for observation of electronic dynamics during early stages of ion track formation is shown. PMID:28878186

Effect Of Chromium Underlayer On The Properties Of Nano-Crystalline Diamond Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garratt, Elias; AlFaify, Salem; Yoshitake, T.

2013-01-11

This paper investigated the effect of chromium underlayer on the structure, microstructure and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on silicon substrate with a thin film of chromium as an underlayer. The composition, structure and microstructure of the deposited layers were analyzed using non-Rutherford Backscattering Spectrometry, Raman Spectroscopy, Near-Edge X-Ray Absorption Fine Structure, X-ray Diffraction and Atomic Force Microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphiticmore » phases of the films evaluated by x-ray and optical spectroscopic analysis determined consistency between sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.« less

Effect of chromium underlayer on the properties of nano-crystalline diamond films

NASA Astrophysics Data System (ADS)

Garratt, E.; AlFaify, S.; Yoshitake, T.; Katamune, Y.; Bowden, M.; Nandasiri, M.; Ghantasala, M.; Mancini, D. C.; Thevuthasan, S.; Kayani, A.

2013-01-01

This paper investigated the effect of chromium underlayer on the structure, microstructure, and composition of the nano-crystalline diamond films. Nano-crystalline diamond thin films were deposited at high temperature in microwave-induced plasma diluted with nitrogen, on single crystal silicon substrate with a thin film of chromium as an underlayer. Characterization of the film was implemented using non-Rutherford backscattering spectrometry, Raman spectroscopy, near-edge x-ray absorption fine structure, x-ray diffraction, and atomic force microscopy. Nanoindentation studies showed that the films deposited on chromium underlayer have higher hardness values compared to those deposited on silicon without an underlayer. Diamond and graphitic phases of the films evaluated by x-ray and optical spectroscopic analyses determined consistency between the sp2 and sp3 phases of carbon in chromium sample to that of diamond grown on silicon. Diffusion of chromium was observed using ion beam analysis which was correlated with the formation of chromium complexes by x-ray diffraction.

Surface structuring in polypropylene using Ar+ beam sputtering: Pattern transition from ripples to dot nanostructures

NASA Astrophysics Data System (ADS)

Goyal, Meetika; Aggarwal, Sanjeev; Sharma, Annu; Ojha, Sunil

2018-05-01

Temporal variations in nano-scale surface morphology generated on Polypropylene (PP) substrates utilizing 40 keV oblique argon ion beam have been presented. Due to controlled variation of crucial beam parameters i.e. ion incidence angle and erosion time, formation of ripple patterns and further its transition into dot nanostructures have been realized. Experimental investigations have been supported by evaluation of Bradley and Harper (B-H) coefficients estimated using SRIM (The Stopping and Range of Ions in Matter) simulations. Roughness of pristine target surfaces has been accredited to be a crucial factor behind the early time evolution of nano-scale patterns over the polymeric surface. Study of Power spectral density (PSD) spectra reveals that smoothing mechanism switch from ballistic drift to ion enhanced surface diffusion (ESD) which can be the most probable cause for such morphological transition under given experimental conditions. Compositional analysis and depth profiling of argon ion irradiated specimens using Rutherford Backscattering Spectroscopy (RBS) has also been correlated with the AFM findings.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shojaee, S. A.; Qi, Y.; Wang, Y. Q.

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporatedmore » silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.« less

The bonding of protective films of amorphic diamond to titanium

NASA Astrophysics Data System (ADS)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Undergraduate Research and Training in Ion-Beam Analysis of Environmental Materials

NASA Astrophysics Data System (ADS)

Vineyard, Michael F.; Chalise, Sajju; Clark, Morgan L.; LaBrake, Scott M.; McCalmont, Andrew M.; McGuire, Brendan C.; Mendez, Iseinie I.; Watson, Heather C.; Yoskowitz, Joshua T.

We have an active undergraduate research program at the Union College Ion-Beam Analysis Laboratory (UCIBAL) focused on the study of environmental materials. Accelerator-based ion-beam analysis (IBA) is a powerful tool for the study of environmental pollution because it can provide information on a broad range of elements with high sensitivity and low detection limits, is non-destructive, and requires little or no sample preparation. It also provides excellent training for the next generation of environmental scientists. Beams of protons and alpha particles with energies of a few MeV from the 1.1-MV tandem Pelletron accelerator (NEC Model 3SDH) in the UCIBAL are used to characterize environmental samples using IBA techniques such as proton-induced X-ray emission, Rutherford back-scattering, and proton-induced gamma-ray emission. Recent projects include the characterization of atmospheric aerosols in the Adirondack Mountains of upstate New York, the study of heavy metal pollutants in river sediment, measurements of Pb diffusion in sulfide minerals to help constrain the determination of the age of iron meteorites, and the search for heavy metals and toxins in artificial turf.

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, B. Z.; Wang, X. L.; Wang, X. Y.; Guo, L. C.; Wang, X. H.; Xiao, H. L.; Liu, H. X.

2007-02-01

High-Al-content InxAlyGa1-x-yN (x = 1-10%, y = 34-45%) quaternary alloys were grown on sapphire by radio-frequency plasma-excited molecular beam epitaxy. Rutherford back-scattering spectrometry, high resolution x-ray diffraction and cathodoluminescence were used to characterize the InAlGaN alloys. The experimental results show that InAlGaN with an appropriate Al/In ratio (near 4.7, which is a lattice-match to the GaN under-layer) has better crystal and optical quality than the InAlGaN alloys whose Al/In ratios are far from 4.7. Some cracks and V-defects occur in high-Al/In-ratio InAlGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions.

A comparison of the techniques of PIXE, PIGE and INAA by reference to the elemental analysis of porcine brain samples

NASA Astrophysics Data System (ADS)

Stedman, J. D.; Spyrou, N. M.

1994-12-01

The trace element concentrations in porcine brain samples as determined by particle-induced X-ray emission (PIXE) analysis, instrumental neutron activation analysis (INAA) and particle-induced gamma-ray emission (PIGE) analysis are compared. The matrix composition was determined by Rutherford backscattering (RBS). Al, Si, P, S, Cl, K, Ca, Mn, Fe and Cd were determined by PIXE analysis Na, K, Sc, Fe, Co, Zn, As, Br, Rb, and Cs by INAA and Na, Mg and Fe by PIGE analysis. The bulk elements C, N, O, Na Cl and S were found by RBS analysis. Elemental concentrations are obtained using the comparator method of analysis rather than an absolute method, the validity which is examined by comparing the elemental concentrations obtained in porcine brain using two separate certified reference materials.

Irradiation induced formation of VN in CrN thin films

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Mitrić, M.; Bibić, N.

2015-09-01

Reactively sputtered CrN layer, deposited on Si(1 0 0) wafer, was implanted at room temperature with 80-keV V+ ions to the fluence of 2 × 1017 ions/cm2. After implantation the sample was annealed in a vacuum, for 2 h at 700 °C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at ∼20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter.

Composition, nanostructure, and optical properties of silver and silver-copper lusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradell, Trinitat; Pavlov, Radostin S.; Carolina Gutierrez, Patricia

2012-09-01

Lusters are composite thin layers of coinage metal nanoparticles in glass displaying peculiar optical properties and obtained by a process involving ionic exchange, diffusion, and crystallization. In particular, the origin of the high reflectance (golden-shine) shown by those layers has been subject of some discussion. It has been attributed to either the presence of larger particles, thinner multiple layers or higher volume fraction of nanoparticles. The object of this paper is to clarify this for which a set of laboratory designed lusters are analysed by Rutherford backscattering spectroscopy, transmission electron microscopy, x-ray diffraction, and ultraviolet-visible spectroscopy. Model calculations and numericalmore » simulations using the finite difference time domain method were also performed to evaluate the optical properties. Finally, the correlation between synthesis conditions, nanostructure, and optical properties is obtained for these materials.« less

Sub-monolayer growth of Ag on flat and nanorippled SiO{sub 2} surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhatnagar, Mukul; Ranjan, Mukesh; Mukherjee, Subroto

2016-05-30

In-situ Rutherford Backscattering Spectrometry (RBS) and Molecular Dynamics (MD) simulations have been used to investigate the growth dynamics of silver on a flat and the rippled silica surface. The calculated sticking coefficient of silver over a range of incidence angles shows a similar behaviour to the experimental results for an average surface binding energy of a silver adatom of 0.2 eV. This value was used to parameterise the MD model of the cumulative deposition of silver in order to understand the growth mechanisms. Both the model and the RBS results show marginal difference between the atomic concentration of silver on themore » flat and the rippled silica surface, for the same growth conditions. For oblique incidence, cluster growth occurs mainly on the leading edge of the rippled structure.« less

Growth and characterization of Pt-Si droplets for silicon nanowires synthesis

NASA Astrophysics Data System (ADS)

Khumalo, Z. M.; Topić, M.; Mtshali, C. B.; Blumenthal, M.

2018-02-01

The formation of platinum silicide phases as a function of the annealing temperature was investigated using in-situ real-time Rutherford backscattering spectrometry. The in-situ real-time RBS revealed the reaction of platinum and silicon to start at about 220 °C to form platinum silicide phases, Pt2Si and PtSi in sequence. Scanning electron microscope revealed the morphological change in the platinum layer (formation of droplets) at 800 °C. The particle induced X-ray emission analysis showed the variation of platinum intensity, in the droplets areas, between 1600 and 2000 counts. The surrounding areas are left almost uncovered due to platinum film dewetting. In-plane as well as out-of-plane silicon nanowires were observed to form at 800 °C and 1000 °C using pulsed laser ablation and thermal annealing techniques, respectively.

Gold-implanted shallow conducting layers in polymethylmethacrylate

NASA Astrophysics Data System (ADS)

Teixeira, F. S.; Salvadori, M. C.; Cattani, M.; Brown, I. G.

2009-03-01

PMMA (polymethylmethacrylate) was ion implanted with gold at very low energy and over a range of different doses using a filtered cathodic arc metal plasma system. A nanometer scale conducting layer was formed, fully buried below the polymer surface at low implantation dose, and evolving to include a gold surface layer as the dose was increased. Depth profiles of the implanted material were calculated using the Dynamic TRIM computer simulation program. The electrical conductivity of the gold-implanted PMMA was measured in situ as a function of dose. Samples formed at a number of different doses were subsequently characterized by Rutherford backscattering spectrometry, and test patterns were formed on the polymer by electron beam lithography. Lithographic patterns were imaged by atomic force microscopy and demonstrated that the contrast properties of the lithography were well maintained in the surface-modified PMMA.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

NASA Technical Reports Server (NTRS)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Cyclic voltammetry on sputter-deposited films of electrochromic Ni oxide: Power-law decay of the charge density exchange

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wen, Rui-Tao, E-mail: Ruitao.Wen@angstrom.uu.se; Granqvist, Claes G.; Niklasson, Gunnar A.

2014-10-20

Ni-oxide-based thin films were produced by reactive direct-current magnetron sputtering and were characterized by X-ray diffraction and Rutherford backscattering spectroscopy. Intercalation of Li{sup +} ions was accomplished by cyclic voltammetry (CV) in an electrolyte of LiClO{sub 4} in propylene carbonate, and electrochromism was documented by spectrophotometry. The charge density exchange, and hence the optical modulation span, decayed gradually upon repeated cycling. This phenomenon was accurately described by an empirical power law, which was valid for at least 10{sup 4} cycles when the applied voltage was limited to 4.1 V vs Li/Li{sup +}. Our results allow lifetime assessments for one of themore » essential components in an electrochromic device such as a “smart window” for energy-efficient buildings.« less

Ternary AlGaN Alloys with High Al Content and Enhanced Compositional Homogeneity Grown by Plasma-Assisted Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Fellmann, Vincent; Jaffrennou, Périne; Sam-Giao, Diane; Gayral, Bruno; Lorenz, Katharina; Alves, Eduardo; Daudin, Bruno

2011-03-01

We have studied the influence of III/N flux ratio and growth temperature on structural and optical properties of high Al-content, around 50-60%, AlGaN alloy layers grown by plasma-assisted molecular beam epitaxy. In a first part, based on structural analysis by Rutherford Backscattering Spectroscopy, we establish that a III/N flux ratio slightly above 1 produces layers with low amount of structural defects. In a second part, we study the effect of growth temperature on structural and optical properties of layers grown with previously determined optimal III/N flux ratio. We find that optimal growth temperatures for Al0.50Ga0.50N layers with compositional homogeneity related with narrow UV photoluminescence properties are in the low temperature range for growing GaN layers, i.e., 650-680 °C. We propose that lowering Ga adatom diffusion on the surface favors random incorporation of both Ga and Al adatoms on wurtzite crystallographic sites leading to the formation of an homogeneous alloy.

Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1 1 0) by ion channeling and ab initio calculations

NASA Astrophysics Data System (ADS)

Mathayan, Vairavel; Kothalamuthu, Saravanan; Gnanasekaran, Jaiganesh; Balakrishnan, Sundaravel; Panigrahi, Binaykumar

2018-01-01

The O18 and self ions are implanted at same depth in Fe (1 1 0) crystal and annealed to study the oxygen trapping under excess self interstitial defects. Rutherford backscattering spectrometry, nuclear reaction analysis and channeling measurements have been performed to determine the lattice site position of O18. The presence of dislocation loops is confirmed by energy-dependent dechanneling parameter measurements. From the tilt angular scans of Fe and O18 signals along 〈1 0 0〉, 〈1 1 0〉 axes, O18 is found to be displaced 0.2 Å from tetrahedral towards octahedral interstitial site in O18. Similar lattice site location of oxygen with the displacement of 0.37 Å is predicted by density functional theory calculations for the interaction of oxygen with 〈1 0 0〉 interstitial dislocation loop structure. Our results provide strong evidence on oxygen trapping at interstitial dislocation loops in the presence of excess interstitial defects in iron.

The Effect of Ag and Ag+N Ion Implantation on Cell Attachment Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urkac, Emel Sokullu; Oztarhan, Ahmet; Gurhan, Ismet Deliloglu

2009-03-10

Implanted biomedical prosthetic devices are intended to perform safely, reliably and effectively in the human body thus the materials used for orthopedic devices should have good biocompatibility. Ultra High Molecular Weight Poly Ethylene (UHMWPE) has been commonly used for total hip joint replacement because of its very good properties. In this work, UHMWPE samples were Ag and Ag+N ion implanted by using the Metal-Vapor Vacuum Arc (MEVVA) ion implantation technique. Samples were implanted with a fluency of 1017 ion/cm2 and extraction voltage of 30 kV. Rutherford Backscattering Spectrometry (RBS) was used for surface studies. RBS showed the presence of Agmore » and N on the surface. Cell attachment properties investigated with model cell lines (L929 mouse fibroblasts) to demonstrate that the effect of Ag and Ag+N ion implantation can favorably influence the surface of UHMWPE for biomedical applications. Scanning electron microscopy (SEM) was used to demonstrate the cell attachment on the surface. Study has shown that Ag+N ion implantation represents more effective cell attachment properties on the UHMWPE surfaces.« less

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C.; Van Stiphout, K.

2016-04-07

We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide withmore » a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.« less

Fabrication and characterization of carbon-backed thin 208Pb targets.

PubMed

Thakur, Meenu; Dubey, R; Abhilash, S R; Behera, B R; Mohanty, B P; Kabiraj, D; Ojha, Sunil; Duggal, Heena

2016-01-01

Thin carbon-backed isotopically enriched 208 Pb targets were required for our experiment aimed to study the reaction dynamics for 48 Ti +  208 Pb system, populating the near super-heavy nucleus 256 Rf, through mass-energy correlation of the fission fragments. Purity and thickness of the targets are of utmost importance in such studies as these factors have strong influence on the measurement accuracy of mass and energy distribution of fission fragments. 208 Pb targets with thickness ranging from 60 μg/cm 2 to 250 μg/cm 2 have been fabricated in high vacuum environment using physical vapor deposition method. Important points in the method are as follows: • 208 Pb was deposited using resistive heating method, whereas carbon (backing foil) deposition was performed by using the electron beam bombardment technique.•Different characterization techniques such as Particle Induced X-ray Emission (PIXE), Energy Dispersive X-Ray Fluorescence (EDXRF) and Rutherford Backscattering Spectrometry (RBS) were used to assert the purity and thickness of the targets.•These targets have successfully been used to accomplish our experimental objectives.

Studies on interface between In2O3 and CuInTe2 thin films

NASA Astrophysics Data System (ADS)

Ananthan, M. R.; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-10-01

Interface between dc sputtered In2O3 and stepwise flash evaporated CuInTe2 films were studied by probing Si/In2O3/CuInTe2 and Si/CuInTe2/In2O3 structures with the help of glancing angle X-ray diffraction, Rutherford backscattering spectrometry and micro-Raman spectroscopy. The results showed that in Si/In2O3/CuInTe2 structure, a ∼20 nm thick interface consisting of In, Cu and O had formed between In2O3 and CuInTe2 and was attributed to the diffusion of Cu from CuInTe2 into In2O3 film. On the other hand, in Si/CuInTe2/In2O3 structure, homogeneity of the underlying CuInTe2 film was found lost completely. An estimate of the masses of the constituent elements showed that the damage was caused by loss of Te from CuInTe2 film during the growth of In2O3 film on Si/CuInTe2.

Study of electronic sputtering of CaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Khan, Saif A.; Kumar, Tanuj; Tripathi, Ambuj; Avasthi, D. K.; Pandey, Avinash C.

2014-01-01

In the present work thin films of CaF2 deposited on Si substrate by electron beam evaporation have been investigated for swift heavy ions induced sputtering and surface modifications. Glancing angle X-ray Diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was performed to determine the sputter yield of CaF2 and a decrease in sputter yield has been observed with increase in film thickness. Thermal spike model has been applied to explain this. The confinement of energy in the grains having size smaller than the electron mean free path (λ) results in a higher sputtering yield. Atomic force microscopy (AFM) studies of irradiated CaF2 thin films show formation of cracks on film surface at a fluence of 5 × 1012 ions/cm2. Also RBS results confirm the removal of film from the surface and more exposure of substrate with increasing dose of ions.

Microstructural, mechanical and optical properties research of a carbon ion-irradiated Y 2SiO 5 crystal

DOE PAGES

Song, Hong-Lian; Yu, Xiao-Fei; Huang, Qing; ...

2017-01-28

Ion irradiation has been a popular method to modify properties of different kinds of materials. Ion-irradiated crystals have been studied for years, but the effects on microstructure and optical properties during irradiation process are still controversial. In this study, we used 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated Y 2SiO 5 (YSO) crystal at room temperature, and discussed the influence of C ion irradiation on the microstructure, mechanical and optical properties of YSO crystal by Rutherford backscattering/channeling analyzes (RBS/C), X-ray diffraction patterns (XRD), Raman, nano-indentation test, transmission and absorption spectroscopy, the prismmore » coupling and the end-facet coupling experiments. We also used the secondary ion mass spectrometry (SIMS) to analyze the elements distribution along sputtering depth. Finally, 6 MeV C ions with a fluence of 1 × 10 15 ion/cm 2 irradiated caused the deformation of YSO structure and also influenced the spectral properties and lattice vibrations.« less

Plasma enhanced chemical vapor deposition of wear resistant gradual a-Si1-x:Cx:H coatings on nickel-titanium for biomedical applications

NASA Astrophysics Data System (ADS)

Niermann, Benedikt; Böke, Marc; Schauer, Janine-Christina; Winter, Jörg

2010-03-01

Plasma enhanced chemical vapor deposition has been used to deposit thin films with gradual transitions from silicon to carbon on Cu, Ni, stainless steel, and NiTi. Thus show low stress, elasticity, and wear resistance with excellent adhesion on all metals under investigation. Already at low Si concentrations of 10 at. % the intrinsic stress is considerably reduced compared to pure diamondlike carbon (DLC) films. The deposition process is controlled by optical emission spectroscopy. This technique has been applied to monitor the growth precursors and to correlate them with the film composition. The compositions of the films were determined by Rutherford backscattering spectroscopy and XPS measurements. Due to the elastic properties of the gradual transition and the excellent biocompatibility of DLC, the described film systems present a useful coating for biomedical applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Lunt, Barry M.; Gates, Richard J.

A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth–tellurium–selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized bymore » optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. Finally, the laser writing process was simulated with COMSOL.« less

Inorganic Thin-film Sensor Membranes with PLD-prepared Chalcogenide Glasses: Challenges and Implementation

PubMed Central

Kloock, Joachim P.; Mourzina, Youlia G.; Ermolenko, Yuri; Doll, Theodor; Schubert, Jürgen; Schöning, Michael J.

2004-01-01

Chalcogenide glasses offer an excellent “challenge” for their use and implementation in sensor arrays due to their good sensor-specific advantages in comparison to their crystalline counterparts. This paper will give an introduction on the preparation of chalcogenide glasses in the thin-film state. First, single microsensors have been prepared with the methods of semiconductor technology. In a next step, three microsensors are implemented onto one single silicon substrate to an “one chip” sensor array. Different ionselective chalcogenide glass membranes (PbSAgIAs2S3, CdSAgIAs2S3, CuAgAsSeTe and TlAgAsIS) were prepared by means of the pulsed laser deposition (PLD) process. The different sensor membranes and structures have been physically characterized by means of Rutherford backscattering spectrometry, scanning electron microscopy and video microscopy. The electrochemical behavior has been investigated by potentiometric measurements.

Bi-induced band gap reduction in epitaxial InSbBi alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.

2014-11-24

The properties of molecular beam epitaxy-grown InSb 1-x Bi x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm)more » for InSb 0.976Bi 0.024, a reduction of ~35 meV/%Bi.« less

Stress hysteresis and mechanical properties of plasma-enhanced chemical vapor deposited dielectric films

NASA Astrophysics Data System (ADS)

Thurn, Jeremy; Cook, Robert F.; Kamarajugadda, Mallika; Bozeman, Steven P.; Stearns, Laura C.

2004-02-01

A comprehensive survey is described of the responses of three plasma-enhanced chemical vapor deposited dielectric film systems to thermal cycling and indentation contact. All three films—silicon oxide, silicon nitride, and silicon oxy-nitride—exhibited significant nonequilibrium permanent changes in film stress on thermal cycling or annealing. The linear relationship between stress and temperature changed after the films were annealed at 300 °C, representing a structural alteration in the film reflecting a change in coefficient of thermal expansion or biaxial modulus. A double-substrate method was used to deduce both thermoelastic properties before and after the anneal of selected films and the results were compared with the modulus deconvoluted from small-scale depth-sensing indentation experiments (nanoindentation). Rutherford backscattering spectrometry and hydrogen forward scattering were used to deduce the composition of the films and it was found that all the films contained significant amounts of hydrogen.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, J.; Calva-Vasquez, G.; Solis, C.

Particle induced X-ray emission (PIeXE) and Rutherford backscattering (RBS) elemental analyses of tree rings and soils from forests around the Mexico City Metropolitan Area (MCMA) were performed. The aim was to estimate the impact of pollution on the forests. Cores from Pinus montezumae and Abies religiosa trees, in four forests around the MCMA (Desierto de los Leones, Iztapopocatepetl, Villa del Carbon and Zoquiapan) and a reference site (El Chico). Differences were observed in samples from the different forests, showing higher values in the areas closest to the MCMA. A correlation of several elements with ring width was found using clustermore » analysis. Additionally, soil analyses from different depths in the forests were carried out, trying to relate the elemental concentrations measured in the tree rings with cation mobility. In this case, samples taken in 1993 and 1999 were analyzed, showing elemental mobility to the various depths.« less

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

An experiment on the dynamics of ion implantation and sputtering of surfaces

NASA Astrophysics Data System (ADS)

Wright, G. M.; Barnard, H. A.; Kesler, L. A.; Peterson, E. E.; Stahle, P. W.; Sullivan, R. M.; Whyte, D. G.; Woller, K. B.

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

Fluorine-doping in titanium dioxide by ion implantation technique

NASA Astrophysics Data System (ADS)

Yamaki, T.; Umebayashi, T.; Sumita, T.; Yamamoto, S.; Maekawa, M.; Kawasuso, A.; Itoh, H.

2003-05-01

We implanted 200 keV F + in single crystalline titanium dioxide (TiO 2) rutile at a nominal fluence of 1 × 10 16 to 1 × 10 17 ions cm -2 and then thermally annealed the implanted sample in air. The radiation damage and its recovery process during the annealing were analyzed by Rutherford backscattering spectrometry in channeling geometry and variable-energy positron annihilation spectroscopy. The lattice disorder was completely recovered at 1200 °C by the migration of point defects to the surface. According to secondary ion mass spectrometry analysis, the F depth profile was shifted to a shallower region along with the damage recovery and this resulted in the formation of an F-doped layer where the impurity concentration steadily increased toward the surface. The F doping proved to provide a modification to the conduction-band edge of TiO 2, as assessed by theoretical band calculations.

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

NASA Astrophysics Data System (ADS)

Novaković, M.; Traverse, A.; Popović, M.; Lieb, K. P.; Zhang, K.; Bibić, N.

2012-07-01

We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150°C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1×1017 and 2×1017 ions/cm2. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-x V x N.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Fabrication de couches minces a memoire de forme et effets de l'irradiation ionique

NASA Astrophysics Data System (ADS)

Goldberg, Florent

1998-09-01

Nickel and titanium when combined in the right stoichiometric proportion (1:1) can form alloys showing the shape memory effect. Within the scope of this thesis, thin films of such alloys have been successfully produced by sputtering. Precise control of composition is crucial in order to obtain the shape memory effect. A combination of analytical tools which can accurately determine the behavior of such materials is also required (calorimetric analysis, crystallography, composition analysis, etc.). Rutherford backscattering spectrometry has been used for quantitative composition analysis. Thereafter irradiation of films with light ions (He+) of few MeV was shown to allow lowering of the characteristic premartensitic transformation temperatures while preserving the shape memory effect. Those results open the door to a new field of research, particularly for ion irradiation and its potential use as a tool to modify the thermomechanical behavior of shape memory thin film actuators.

Error Budgeting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vinyard, Natalia Sergeevna; Perry, Theodore Sonne; Usov, Igor Olegovich

2017-10-04

We calculate opacity from k (hn)=-ln[T(hv)]/pL, where T(hv) is the transmission for photon energy hv, p is sample density, and L is path length through the sample. The density and path length are measured together by Rutherford backscatter. Δk =more » $$\\partial k$$\\ $$\\partial T$$ ΔT + $$\\partial k$$\\ $$\\partial (pL)$$. We can re-write this in terms of fractional error as Δk/k = Δ1n(T)/T + Δ(pL)/(pL). Transmission itself is calculated from T=(U-E)/(V-E)=B/B0, where B is transmitted backlighter (BL) signal and B 0 is unattenuated backlighter signal. Then ΔT/T=Δln(T)=ΔB/B+ΔB 0/B 0, and consequently Δk/k = 1/T (ΔB/B + ΔB$$_0$$/B$$_0$$ + Δ(pL)/(pL). Transmission is measured in the range of 0.2« less

Tungsten nitride coatings obtained by HiPIMS as plasma facing materials for fusion applications

NASA Astrophysics Data System (ADS)

Tiron, Vasile; Velicu, Ioana-Laura; Porosnicu, Corneliu; Burducea, Ion; Dinca, Paul; Malinský, Petr

2017-09-01

In this work, tungsten nitride coatings with nitrogen content in the range of 19-50 at% were prepared by reactive multi-pulse high power impulse magnetron sputtering as a function of the argon and nitrogen mixture and further exposed to a deuterium plasma jet. The elemental composition, morphological properties and physical structure of the samples were investigated by Rutherford backscattering spectrometry, atomic force microscopy and X-ray diffraction. Deuterium implantation was performed using a deuterium plasma jet and its retention in nitrogen containing tungsten films was investigated using thermal desorption spectrometry. Deuterium retention and release behaviour strongly depend on the nitrogen content in the coatings and the films microstructure. All nitride coatings have a polycrystalline structure and retain a lower deuterium level than the pure tungsten sample. Nitrogen content in the films acts as a diffusion barrier for deuterium and leads to a higher desorption temperature, therefore to a higher binding energy.

Composition measurement of epitaxial Sc x Ga1-x N films

NASA Astrophysics Data System (ADS)

Tsui, H. C. L.; Goff, L. E.; Barradas, N. P.; Alves, E.; Pereira, S.; Palgrave, R. G.; Davies, R. J.; Beere, H. E.; Farrer, I.; Ritchie, D. A.; Moram, M. A.

2016-06-01

Four different methods for measuring the compositions of epitaxial Sc x Ga1-x N films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial Sc x Ga1-x N films with 0 ≤ x ≤ 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.

High yield antibiotic producing mutants of Streptomyces erythreus induced by low energy ion implantation

NASA Astrophysics Data System (ADS)

Yu, Chen; Zhixin, Lin; Zuyao, Zou; Feng, Zhang; Duo, Liu; Xianghuai, Liu; Jianzhong, Tang; Weimin, Zhu; Bo, Huang

1998-05-01

Conidia of Streptomyces erythreus, an industrial microbe, were implanted by nitrogen ions with energy of 40-60 keV and fluence from 1 × 10 11 to 5 × 10 14 ions/cm 2. The logarithm value of survival fraction had good linear relationship with the logarithm value of fluence. Some mutants with a high yield of erythromycin were induced by ion implantation. The yield increment was correlated with the implantation fluence. Compared with the mutation results induced by ultraviolet rays, mutation effects of ion implantation were obvious having higher increasing erythromycin potency and wider mutation spectrum. The spores of Bacillus subtilis were implanted by arsenic ions with energy of 100 keV. The distribution of implanted ions was measured by Rutherford Backscattering Spectrometry (RBS) and calculated in theory. The mechanism of mutation induced by ion implantation was discussed.

The effects on γ-LiAlO2 induced by nuclear energy losses during Ga ions implantation

NASA Astrophysics Data System (ADS)

Zhang, Jing; Song, Hong-Lian; Qiao, Mei; Yu, Xiao-Fei; Wang, Tie-Jun; Wang, Xue-Lin

2017-09-01

To explore the evolution of γ-LiAlO2 under ion irradiation at low energy, we implanted Ga ions of 30, 80 and 150 keV at fluences of 1 × 1014 and 1 × 1015 ions/cm2 in z-cut γ-LiAlO2 samples, respectively. The implantation resulted in damage regions dominated by nuclear energy losses at depth of 232 Å, 514 Å, and 911 Å beneath the surface, respectively, which was simulated by the Stopping and Range of Ions in Matter program. The irradiated γ-LiAlO2 were characterized with atomic force microscope, Raman spectroscopy, X-ray diffraction and Rutherford backscattering in a channeling mode for morphology evolution, structure information and damage profiles. The interesting and partly abnormal results showed the various behaviors in modification of surface by Ga ions implantation.

An experiment on the dynamics of ion implantation and sputtering of surfaces.

PubMed

Wright, G M; Barnard, H A; Kesler, L A; Peterson, E E; Stahle, P W; Sullivan, R M; Whyte, D G; Woller, K B

2014-02-01

A major impediment towards a better understanding of the complex plasma-surface interaction is the limited diagnostic access to the material surface while it is undergoing plasma exposure. The Dynamics of ION Implantation and Sputtering Of Surfaces (DIONISOS) experiment overcomes this limitation by uniquely combining powerful, non-perturbing ion beam analysis techniques with a steady-state helicon plasma exposure chamber, allowing for real-time, depth-resolved in situ measurements of material compositions during plasma exposure. Design solutions are described that provide compatibility between the ion beam analysis requirements in the presence of a high-intensity helicon plasma. The three primary ion beam analysis techniques, Rutherford backscattering spectroscopy, elastic recoil detection, and nuclear reaction analysis, are successfully implemented on targets during plasma exposure in DIONISOS. These techniques measure parameters of interest for plasma-material interactions such as erosion/deposition rates of materials and the concentration of plasma fuel species in the material surface.

The effect of primary recoil spectrum on radiation induced segregation in nickel-silicon alloys

NASA Astrophysics Data System (ADS)

Averback, R. S.; Rehn, L. E.; Wagner, W.; Ehrhart, P.

1983-08-01

Segregation of silicon to the surface of Ni-12.7 at% Si alloys during 2.0-MeV He and 3.25-MeV Kr irradiations was measured using Rutherford backscattering spectrometry. For equal calculated defect production rates the Kr irradiation was < 3 % as efficient as the He irradiation for promoting segregation in the temperature range, 450 °C-580 °C. It was further observed that Kr preirradiation of specimens dramatically reduced segregation during subsequent He irradiation. A model for cascade annealing in Ni-Si alloys is presented which qualitatively explains the segregation results. The model assumes that small interstitial-atom-clusters form in individual cascades and that these clusters become trapped at silicon solute atoms. The vacancy thereby becomes the more mobile defect. The model should also have relevance for the observation that void swelling in nickel is suppressed by the addition of silicon solute.

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

NASA Astrophysics Data System (ADS)

Chow, Philippe K.; Yang, Wenjie; Hudspeth, Quentin; Lim, Shao Qi; Williams, Jim S.; Warrender, Jeffrey M.

2018-04-01

We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

The Effect of Platinum-coatings on Hydrogen- and Water-absorption and Desorption Characteristics of Lithium Zirconate

NASA Astrophysics Data System (ADS)

Tsuchiya, B.; Bandow, S.; Nagata, S.; Saito, K.; Tokunaga, K.; Morita, K.

Hydrogen (H)- and water (H2O)-storage and desorption characteristics of 25 nm thick Pt films onLi2ZrO3composite materials, exposed to normal air at room temperature, have been investigated by means of elastic recoil detection (ERD), Rutherford backscattering spectrometry (RBS), weight gain measurement (WGM), and thermal desorption spectroscopy (TDS) techniques. It was found by the ERD and TDS that H and H2O were absorbed into the Pt-coated Li2ZrO3 in air at room temperature and desorbed from it in vacuum at much low temperatures of approximately 317 and 309 K, respectively. In addition, the WGM and TDS spectra revealed that the absorption and desorption characters ofsome gases such as CH4, CO, and CO2including H as well as H2Ointo the Li2ZrO3 bulk were improved by Pt deposition.

Ion irradiation damage in ilmenite at 100 K

USGS Publications Warehouse

Mitchell, J.N.; Yu, N.; Devanathan, R.; Sickafus, K.E.; Nastasi, M.A.; Nord, G.L.

1997-01-01

A natural single crystal of ilmenite (FeTiO3) was irradiated at 100 K with 200 keV Ar2+. Rutherford backscattering spectroscopy and ion channeling with 2 MeV He+ ions were used to monitor damage accumulation in the surface region of the implanted crystal. At an irradiation fluence of 1 ?? 1015 Ar2+/cm2, considerable near-surface He+ ion dechanneling was observed, to the extent that ion yield from a portion of the aligned crystal spectrum reached the yield level of a random spectrum. This observation suggests that the near-surface region of the crystal was amorphized by the implantation. Cross-sectional transmission electron microscopy and electron diffraction on this sample confirmed the presence of a 150 nm thick amorphous layer. These results are compared to similar investigations on geikielite (MgTiO3) and spinel (MgAl2O4) to explore factors that may influence radiation damage response in oxides.

Applications of condensed matter understanding to medical tissues and disease progression: Elemental analysis and structural integrity of tissue scaffolds

NASA Astrophysics Data System (ADS)

Bradley, D. A.; Farquharson, M. J.; Gundogdu, O.; Al-Ebraheem, Alia; Che Ismail, Elna; Kaabar, W.; Bunk, O.; Pfeiffer, F.; Falkenberg, G.; Bailey, M.

2010-02-01

The investigations reported herein link tissue structure and elemental presence with issues of environmental health and disease, exemplified by uptake and storage of potentially toxic elements in the body, the osteoarthritic condition and malignancy in the breast and other soft tissues. Focus is placed on application of state-of-the-art ionizing radiation techniques, including, micro-synchrotron X-ray fluorescence (μ-SXRF) and particle-induced X-ray emission/Rutherford backscattering mapping (μ-PIXE/RBS), coherent small-angle X-ray scattering (cSAXS) and X-ray phase-contrast imaging, providing information on elemental make-up, the large-scale organisation of collagen and anatomical features of moderate and low atomic number media. For the particular situations under investigation, use of such facilities is allowing information to be obtained at an unprecedented level of detail, yielding new understanding of the affected tissues and the progression of disease.

Composition of Renaissance paint layers: simultaneous particle induced X-ray emission and backscattering spectrometry.

PubMed

de Viguerie, L; Beck, L; Salomon, J; Pichon, L; Walter, Ph

2009-10-01

Particle induced X-ray emission spectroscopy (PIXE) is now routinely used in the field of cultural heritage. Various setups have been developed to investigate the elemental composition of wood/canvas paintings or of cross-section samples. However, it is not possible to obtain information concerning the quantity of organic binder. Backscattering spectrometry (BS) can be a useful complementary method to overcome this limitation. In the case of paint layers, PIXE brings the elemental composition (major elements to traces) and the BS spectrum can give access to the proportion of pigment and binder. With the use of 3 MeV protons for PIXE and BS simultaneously, it was possible to perform quantitative analysis including C and O for which the non-Rutherford cross sections are intense. Furthermore, with the use of the same conditions for PIXE and BS, the experiment time and the potential damage by the ion beam were reduced. The results obtained with the external beam of the Accélérateur Grand Louvre pour l'Analyse Elementaire (AGLAE) facility on various test painting samples and on cross sections from Italian Renaissance masterpieces are shown. Simultaneous combination of PIXE and BS leads to a complete characterization of the paint layers: elemental composition and proportion of the organic binder have been determined and thus provide useful information about ancient oil painting recipes.

Localized Surface Plasmon Resonance in Au Nanoparticles Embedded dc Sputtered ZnO Thin Films.

PubMed

Patra, Anuradha; Balasubrahmaniyam, M; Lahal, Ranjit; Malar, P; Osipowicz, T; Manivannan, A; Kasiviswanathan, S

2015-02-01

The plasmonic behavior of metallic nanoparticles is explicitly dependent on their shape, size and the surrounding dielectric space. This study encompasses the influence of ZnO matrix, morphology of Au nanoparticles (AuNPs) and their organization on the optical behavior of ZnO/AuNPs-ZnO/ZnO/GP structures (GP: glass plate). These structures have been grown by a multiple-step physical process, which includes dc sputtering, thermal evaporation and thermal annealing. Different analytical techniques such as scanning electron microscopy, glancing angle X-ray diffraction, Rutherford backscattering spectrometry and optical absorption have been used to study the structures. In-situ rapid thermal treatment during dc sputtering of ZnO film has been found to induce subtle changes in the morphology of AuNPs, thereby altering the profile of the plasmon band in the absorption spectra. The results have been contrasted with a recent study on the spectral response of dc magnetron sputtered ZnO films embedded with AuNPs. Initial simulation results indicate that AuNPs-ZnO/Au/GP structure reflects/absorbs UV and infrared radiations, and therefore can serve as window coatings.

Optical activity and defect/dopant evolution in ZnO implanted with Er

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azarov, Alexander; Galeckas, Augustinas; Kuznetsov, Andrej

2015-09-28

The effects of annealing on the optical properties and defect/dopant evolution in wurtzite (0001) ZnO single crystals implanted with Er ions are studied using a combination of Rutherford backscattering/channeling spectrometry and photoluminescence measurements. The results suggest a lattice recovery behavior dependent on ion dose and involving formation/evolution of an anomalous multipeak defect distribution, thermal stability of optically active Er complexes, and Er outdiffusion. An intermediate defect band occurring between the surface and ion-induced defects in the bulk is stable up to 900 °C and has a photoluminescence signature around 420 nm well corresponding to Zn interstitials. The optical activity of the Ermore » atoms reaches a maximum after annealing at 700 °C but is not directly associated to the ideal Zn site configuration, since the Er substitutional fraction is maximal already in the as-implanted state. In its turn, annealing at temperatures above 700 °C leads to dissociation of the optically active Er complexes with subsequent outdiffusion of Er accompanied by the efficient lattice recovery.« less

The interaction of atomic oxygen with thin copper films

NASA Technical Reports Server (NTRS)

Gibson, B. C.; Williams, J. R.; Fromhold, A. T., Jr.; Bozack, M. J.; Neely, W. C.; Whitaker, Ann F.

1992-01-01

A source of thermal, ground-state atomic oxygen has been used to expose thin copper films at a flux of 1.4 x 10 exp 17 atoms/sq cm s for times up to 50 min for each of five temperatures between 140 and 200 C. Rutherford backscattering spectroscopy was used to characterize the oxide formed during exposure. The observations are consistent with the oxide phase Cu2O. The time dependence and the temperature dependence of the oxide layer thickness can be described using oxide film growth theory based on rate limitation by diffusion. Within the time and temperature ranges of this study, the growth of the oxide layers is well described by the equation L(T,t) = 3.6 x 10 to 8th exp(- 1.1/2k sub B T)t exp 1/2, where L,T, and t are measured in angstroms, degrees Kelvin, and minutes, respectively. The deduced activation energy is 1.10 +/- 0.15 eV, with the attendant oxidation rate being greater than that for the corresponding reaction in molecular oxygen.

Ag out-surface diffusion in crystalline SiC with an effective SiO 2 diffusion barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, H. Y.; Zhu, Z.

2015-05-07

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope ( 110mAg) through the SiC coating layer is a safety concern. In order to understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. Our results suggestmore » little migration of buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO 2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Influence of culture media on the physical and chemical properties of Ag-TiCN coatings

NASA Astrophysics Data System (ADS)

Carvalho, I.; Escobar Galindo, R.; Henriques, M.; Palacio, C.; Carvalho, S.

2014-08-01

The aim of this study was to verify the possible physical and chemical changes that may occur on the surface of Ag-TiCN coatings after exposure to the culture media used in microbiological and cytotoxic assays, respectively tryptic soy broth (TSB) and Dulbecco's modified eagle's medium (DMEM). After sample immersion for 24 h in the media, analyses were performed by glow discharge optical emission spectroscopy discharge radiation (GDOES), Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS). The results of GDOES profile, RBS and XPS spectra, of samples immersed in TSB, demonstrated the formation of a thin layer of carbon, oxygen and nitrogen that could be due to the presence of proteins in TSB. After 24 h of immersion in DMEM, the results showed the formation of a thin layer of calcium phosphates on the surface, since the coatings displayed a highly oxidized surface in which calcium and phosphorus were detected. All these results suggested that the formation of a layer on the coating surface prevented the release of silver ions in concentrations that allow antibacterial activity.

Ag Out-surface Diffusion In Crystalline SiC With An Effective SiO2 Diffusion Barrier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, H.; Xiao, Haiyan Y.; Zhu, Zihua

2015-09-01

For applications of tristructural isotropic (TRISO) fuel particles in high temperature reactors, release of radioactive Ag isotope (110mAg) through the SiC coating layer is a safety concern. To understand the diffusion mechanism, Ag ion implantations near the surface and in the bulk were performed by utilizing different ion energies and energy-degrader foils. High temperature annealing was carried out on the as-irradiated samples to study the possible out-surface diffusion. Before and after annealing, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) measurements were employed to obtain the elemental profiles of the implanted samples. The results suggest little migration ofmore » buried Ag in the bulk, and an out-diffusion of the implanted Ag in the near-surface region of single crystal SiC. It is also found that a SiO2 layer, which was formed during annealing, may serve as an effective barrier to reduce or prevent Ag out diffusion through the SiC coating layer.« less

Advanced techniques for characterization of ion beam modified materials

DOE PAGES

Zhang, Yanwen; Debelle, Aurélien; Boulle, Alexandre; ...

2014-10-30

Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed in this paper. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiationmore » effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Finally, such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.« less

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

NASA Technical Reports Server (NTRS)

Ksendzov, A.; Fathauer, R. W.; George, T.; Pike, W. T.; Vasquez, R. P.; Taylor, A. P.

1993-01-01

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001).

PubMed

Yakimov, A I; Nikiforov, A I; Dvurechenskii, A V; Ulyanov, V V; Volodin, V A; Groetzschel, R

2006-09-28

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500 °C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02-2 ML s(-1), to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s(-1) to 9.8 nm at R = 2 ML s(-1). The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s(-1). Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (∼0.9).

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates

NASA Astrophysics Data System (ADS)

Taylor, E.; Fang, F.; Oehler, F.; Edwards, P. R.; Kappers, M. J.; Lorenz, K.; Alves, E.; McAleese, C.; Humphreys, C. J.; Martin, R. W.

2013-06-01

Indium gallium nitride (InxGa1 - xN) is a technologically important material for many optoelectronic devices, including LEDs and solar cells, but it remains a challenge to incorporate high levels of InN into the alloy while maintaining sample quality. A series of InGaN epilayers was grown with different hydrogen flow rates (0-200 sccm) and growth temperatures (680-750 °C) to obtain various InN fractions and bright emission in the range 390-480 nm. These 160-nm thick epilayers were characterized through several compositional techniques (wavelength dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry) and cathodoluminescence hyperspectral imaging. The compositional analysis with the different techniques shows good agreement when taking into account compositional gradients evidenced in these layers. The addition of small amounts of hydrogen to the gas flow at lower growth temperatures is shown to maintain a high surface quality and luminescence homogeneity. This allowed InN fractions of up to ˜16% to be incorporated with minimal peak energy variations over a mapped area while keeping a high material quality.

Sintered Cr/Pt and Ni/Au ohmic contacts to B 12P 2

DOE PAGES

Frye, Clint D.; Kucheyev, Sergei O.; Edgar, James H.; ...

2015-04-09

With this study, icosahedral boron phosphide (B 12P 2) is a wide-bandgap semiconductor possessing interesting properties such as high hardness, chemical inertness, and the reported ability to self-heal from irradiation by high energy electrons. Here, the authors developed Cr/Pt and Ni/Au ohmic contacts to epitaxially grown B 12P 2 for materials characterization and electronic device development. Cr/Pt contacts became ohmic after annealing at 700 °C for 30 s with a specific contact resistance of 2×10 –4 Ω cm 2, as measured by the linear transfer length method. Ni/Au contacts were ohmic prior to any annealing, and their minimum specific contactmore » resistance was ~l–4 × 10 –4 Ω cm 2 after annealing over the temperature range of 500–800 °C. Rutherford backscattering spectrometry revealed a strong reaction and intermixing between Cr/Pt and B 12P 2 at 700 °C and a reaction layer between Ni and B 12P 2 thinner than ~25 nm at 500 °C.« less

X-ray Photoelectron Spectroscopy (XPS), Rutherford Back Scattering (RBS) studies

NASA Technical Reports Server (NTRS)

Neely, W. C.; Bozak, M. J.; Williams, J. R.

1993-01-01

X-ray photoelectron spectroscopy (XPS), Rutherford Back Scattering (RBS) studies of each of sample received were completed. Since low angle X-ray could not be performed because of instrumentation problems, Auger spectrometry was employed instead. The results of these measurements for each of the samples is discussed in turn.

Hafnia-based resistive switching devices for non-volatile memory applications and effects of gamma irradiation on device performance

NASA Astrophysics Data System (ADS)

Arun, N.; Kumar, K. Vinod; Pathak, A. P.; Avasthi, D. K.; Nageswara Rao, S. V. S.

2018-04-01

Non-volatile memory (NVM) devices were fabricated as a Metal- Insulator-Metal (MIM) structures by sandwiching Hafnium dioxide (HfO2) thin film in between two metal electrodes. The top and bottom metal electrodes were deposited by using the thermal evaporation, and the oxide layer was deposited by using the RF magnetron sputtering technique. The Resistive Random Access Memory (RRAM) device structures such as Ag/HfO2/Au/Si were fabricated and I-V characteristics for the pristine and gamma-irradiated devices with a dose 24 kGy were measured. Further we have studied the thermal annealing effects, in the range of 100°-400°C in a tubular furnace for the HfO2/Au/Si samples. The X-ray diffraction (XRD), Rutherford Backscattering Spectrometry (RBS), field emission-scanning electron microscopy (FESEM) analysis measurements were performed to determine the thickness, crystallinity and stoichiometry of these films. The electrical characteristics such as resistive switching, endurance, retention time and switching speed were measured by a semiconductor device analyser. The effects of gamma irradiation on the switching properties of these RRAM devices have been studied.

Ion beam induced optical and surface modification in plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Singh, Udai B.; Gautam, Subodh K.; Kumar, Sunil; Hooda, Sonu; Ojha, Sunil; Singh, Fouran

2016-07-01

In present work, ion irradiation induced nanostructuring has been exploited as an efficient and effective tool for synthesis of coupled plasmonics nanostructures by using 1.2 MeV Xe ions on Au/ZnO/Au system deposited on glass substrate. The results are correlated on the basis of their optical absorption, surface morphologies and enhanced sensitivity of evolved phonon modes by using UV Visible spectroscopy, scanning electron microscopy (SEM), and Raman spectroscopy (RS), respectively. Optical absorbance spectra of plasmonic nanostructures (NSs) show a decrease in band gap, which may be ascribed to the formation of defects with ion irradiation. The surface morphology reveals the formation of percolated NSs upon ion irradiation and Rutherford backscattering spectrometry (RBS) study clearly shows the formation of multilayer system. Furthermore, RS measurements on samples are studied to understand the enhanced sensitivity of ion irradiation induced phonon mode at 573 cm-1 along with other modes. As compared to pristine sample, a stronger and pronounced evolution of these phonon modes is observed with further ion irradiation, which indicates localized surface plasmon results with enhanced intensity of phonon modes of Zinc oxide (ZnO) material. Thus, such plasmonic NSs can be used as surface enhanced Raman scattering (SERS) substrates.

Spatially resolved elemental distributions in articular cartilage

NASA Astrophysics Data System (ADS)

Reinert, T.; Reibetanz, U.; Vogt, J.; Butz, T.; Werner, A.; Gründer, W.

2001-07-01

In this study, the nuclear microprobe technique is employed to analyse the chemistry of joint cartilage in order to correlate internal structures of the collagen network with the elemental distribution. The samples were taken from pig's knee joint. 30 μm thick coronar cross-sections were prepared by means of cryosectioning and freeze-drying. We performed simultaneously particle induced X-ray emission (PIXE), Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). Thus we obtained spatially resolved distributions of the elements H, C, N, O, P, S, Cl, K and Ca. The main components of the organic matrix are H, C, N and O. It was shown that their relations vary with the cartilage structures. It could be shown that zones with aligned collagen fibrils contain less sulphur and potassium but more chlorine. The higher chlorine concentration is remarkable because newest biochemical studies found that hypochloric acid is involved in cartilage degradation. Furthermore, the calcium distribution is still of great interest. Its correlation to structural changes inside the cartilage is still being discussed. It could be disproved that zones of higher calcium concentration are related to the aligned structures of the collagen network.

Characterization of compositional modifications in metal-organic frameworks using carbon and alpha particle microbeams

NASA Astrophysics Data System (ADS)

Paneta, V.; Fluch, U.; Petersson, P.; Ott, S.; Primetzhofer, D.

2017-08-01

Zirconium-oxide based metal-organic frameworks (MOFs) were grown on p-type Si wafers. A modified linker molecule containing iodine was introduced by post synthetic exchange (PSE). Samples have been studied using Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) techniques, employing the 5 MV 15SDH-2 Pelletron Tandem accelerator at the Ångström laboratory. The degree of post synthetic uptake of the iodine-containing linker has been investigated with both a broad beam and a focused beam of carbon and alpha particles targeting different kind of MOF crystals which were of ∼1-10 μm in size, depending on the linker used. Iodine concentrations in MOF crystallites were also measured by Nuclear Magnetic Resonance Spectroscopy (NMR) and are compared to the RBS results. In parallel to the ion beam studies, samples were investigated by Scanning Electron Microscopy (SEM) to quantify possible crystallite clustering, develop optimum sample preparation routines and to characterize the potential ion beam induced sample damage and its dependence on different parameters. Based on these results the reliability and accuracy of ion beam data is assessed.

Growth and Surface Modification of LaFeO3 Thin Films Induced By Reductive Annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flynn, Brendan T.; Zhang, Hongliang; Shutthanandan, V.

2015-03-01

The electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high energy electron diffraction (RHEED), x-ray diffraction (XRD), transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS)more » demonstrated that the film is highly oriented and stoichiometric. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved x-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of perovskite materials for catalysts.« less

Non-invasive quantitative micro-PIXE-RBS/EBS/EBS imaging reveals the lost polychromy and gilding of the Neo-Assyrian ivories from the Louvre collection.

PubMed

Albéric, Marie; Müller, Katharina; Pichon, Laurent; Lemasson, Quentin; Moignard, Brice; Pacheco, Claire; Fontan, Elisabeth; Reiche, Ina

2015-05-01

Antique objects are known to have been brightly colored. However, the appearance of these objects has changed over time and paint traces are rarely preserved. The surface of ivory objects (8th century B.C., Syria) from the Louvre museum collection (Paris) have been non-invasively studied by simultaneous particle-induced X-ray emission (PIXE) and Rutherford and elastic backscattering spectrometry (RBS/EBS) micro-imaging at the AGLAE facility (C2RMF, Paris). Qualitative 2D chemical images of elements ranging from Na to Pb on the surface of the ancient ivory carvings provide evidence of lost polychromy and gilding. Quantitative PIXE data of specific areas allow discrimination between traces of sediments and former polychromy. Different shades of blue can be differentiated from particular Pb/Cu ratios. The characterization of gilding based on RBS data demonstrates the exceptional technological skills of the Phoenician craftsmen supposed to have carved the Arslan Tash ivories. More precise reconstructions of the original polychromy compared to previous studies and a criterion for the authentication of ancient gilded ivory object are proposed. Copyright © 2015 Elsevier B.V. All rights reserved.

Materials science education: ion beam modification and analysis of materials

NASA Astrophysics Data System (ADS)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Antibacterial effect of silver nanofilm modified stainless steel surface

NASA Astrophysics Data System (ADS)

Fang, F.; Kennedy, J.; Dhillon, M.; Flint, S.

2015-03-01

Bacteria can attach to stainless steel surfaces, resulting in the colonization of the surface known as biofilms. The release of bacteria from biofilms can cause contamination of food such as dairy products in manufacturing plants. This study aimed to modify stainless steel surfaces with silver nanofilms and to examine the antibacterial effectiveness of the modified surface. Ion implantation was applied to produce silver nanofilms on stainless steel surfaces. 35 keV Ag ions were implanted with various fluences of 1 × 1015 to 1 × 1017 ions•cm-2 at room temperature. Representative atomic force microscopy characterizations of the modified stainless steel are presented. Rutherford backscattering spectrometry spectra revealed the implanted atoms were located in the near-surface region. Both unmodified and modified stainless steel coupons were then exposed to two types of bacteria, Pseudomonas fluorescens and Streptococcus thermophilus, to determine the effect of the surface modification on bacterial attachment and biofilm development. The silver modified coupon surface fluoresced red over most of the surface area implying that most bacteria on coupon surface were dead. This study indicates that the silver nanofilm fabricated by the ion implantation method is a promising way of reducing the attachment of bacteria and delay biofilm formation.

Xenon migration behaviour in titanium nitride

NASA Astrophysics Data System (ADS)

Gavarini, S.; Toulhoat, N.; Peaucelle, C.; Martin, P.; Mende, J.; Pipon, Y.; Jaffrezic, H.

2007-05-01

Titanium nitride is one of the inert matrixes proposed to surround the fuel in gas cooled fast reactor (GFR) systems. These reactors operate at high temperature and necessitate refractory materials presenting a high chemical stability and good mechanical properties. A total retention of the most volatile fission products, such as Xe, I or Cs, by the inert matrix is needed during the in pile process. The thermal migration of xenon in TiN was studied by implanting 800 keV Xe++ ions in sintered samples at an ion fluence of 5 × 1015 cm-2. Annealing was performed at temperatures ranging from 1673 to 1923 K for 1 and 3 h. Xenon concentration profiles were studied by Rutherford backscattering spectrometry (RBS) using 2.5 MeV α-particles. The migration behaviour of xenon corresponds to a gas migration model. It is dominated by a surface directed transport with a slight diffusion component. The mean activation energy corresponding to the diffusion component was found to be 2.2 ± 0.3 eV and corresponds to the Brownian motion of xenon bubbles. The directed Xe migration can be interpreted in term of bubble transport using Evans model. This last process is mostly responsible for xenon release from TiN.

Characterisation of zinc in slags originated from a contaminated sediment by coupling /μ-PIXE, /μ-RBS, /μ-EXAFS and powder EXAFS spectroscopy

NASA Astrophysics Data System (ADS)

Isaure, M. P.; Laboudigue, A.; Manceau, A.; Sarret, G.; Tiffreau, C.; Trocellier, P.

2001-07-01

Depositing dredged sediments on soils is usual but it is a hazardous practice for the local environment when these sediments are polluted by heavy metals. This chemical hazard can be assessed by determining the speciation of metals. In this study, slags highly polluted with Zn and originated from a contaminated dredged sediment were investigated. Zn speciation was studied by laterally resolved techniques such as μ-particle induced X-ray emission (μ-PIXE), μ-Rutherford backscattering spectrometry (μ-RBS), μ-extended X-ray absorption fine structure (μ-EXAFS), and bulk analyses such as powder EXAFS spectroscopy. μ-PIXE and μ-RBS results showed that high concentrations of Zn were associated with S in localised areas at the surface of the slags while moderate amounts of Zn were mainly associated with Fe in the matrix. EXAFS results allowed to identify ZnS and Zn sorbed on ferrihydrite (5Fe 2O 3·9H 2O), proxy for iron oxy-hydroxides, as the main Zn-bearing phases. The occurrence of this Zn-iron oxy-hydroxide is interpreted as a mobilisation of Zn released from ZnS oxidation.

A Rutherford Scattering Simulation with Microcomputer Graphics.

ERIC Educational Resources Information Center

Calle, Carlos I.; Wright, Lavonia F.

1989-01-01

Lists a program for a simulation of Rutherford's gold foil experiment in BASIC for both Apple II and IBM compatible computers. Compares Rutherford's model of the atom with Thompson's plum pudding model of the atom. (MVL)

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Vázquez, L.; Alves, L. C.; Corregidor, V.; Romero, M. F.; Pantellini, A.; Lanzieri, C.; Muñoz, E.

2014-05-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAlx and AuAlx phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals.

Combinatorial investigation of Fe–B thin-film nanocomposites

PubMed Central

Brunken, Hayo; Grochla, Dario; Savan, Alan; Kieschnick, Michael; Meijer, Jan D; Ludwig, Alfred

2011-01-01

Combinatorial magnetron sputter deposition from elemental targets was used to create Fe–B composition spread type thin film materials libraries on thermally oxidized 4-in. Si wafers. The materials libraries consisting of wedge-type multilayer thin films were annealed at 500 or 700 °C to transform the multilayers into multiphase alloys. The libraries were characterized by nuclear reaction analysis, Rutherford backscattering, nanoindentation, vibrating sample magnetometry, x-ray diffraction (XRD) and transmission electron microscopy (TEM). Young's modulus and hardness values were related to the annealing parameters, structure and composition of the films. The magnetic properties of the films were improved by annealing in a H2 atmosphere, showing a more than tenfold decrease in the coercive field values in comparison to those of the vacuum-annealed films. The hardness values increased from 8 to 18 GPa when the annealing temperature was increased from 500 to 700 °C. The appearance of Fe2B phases, as revealed by XRD and TEM, had a significant effect on the mechanical properties of the films. PMID:27877435

Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge

PubMed Central

Scopece, Daniele; Döbeli, Max; Passerone, Daniele; Maeder, Xavier; Neels, Antonia; Widrig, Beno; Dommann, Alex; Müller, Ulrich; Ramm, Jürgen

2016-01-01

Abstract The pre-treatment of substrate surfaces prior to deposition is important for the adhesion of physical vapour deposition coatings. This work investigates Si surfaces after the bombardment by energetic Cr ions which are created in cathodic arc discharges. The effect of the pre-treatment is analysed by X-ray diffraction, Rutherford backscattering spectroscopy, scanning electron microscopy and in-depth X-ray photoemission spectroscopy and compared for Cr vapour produced from a filtered and non-filtered cathodic arc discharge. Cr coverage as a function of ion energy was also predicted by TRIDYN Monte Carlo calculations. Discrepancies between measured and simulated values in the transition regime between layer growth and surface removal can be explained by the chemical reactions between Cr ions and the Si substrate or between the substrate surface and the residual gases. Simulations help to find optimum and more stable parameters for specific film and substrate combinations faster than trial-and-error procedure. PMID:27877854

Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Roschuk, T.; Wojcik, J.; Tan, X.; Davies, J. A.; Mascher, P.

2004-05-01

Thin silicon oxynitride (SiOxNy) and silicon-rich silicon-oxide (SiOx,x<=2) films of varying composition have been deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Films were deposited using various source gas flow rates while maintaining a constant chamber pressure. Thicknesses and refractive indices for these films were determined using ellipsometry. Bonding of the constituent atoms was analyzed using Fourier transform infrared (FTIR) spectroscopy. FTIR spectroscopy also allowed for the detection of bonded species such as hydrogen. Compositional characteristics were determined using various forms of ion beam analysis such as Rutherford backscattering and elastic recoil detection. These analysis techniques were used to determine the values of x and y, the molar fractions of oxygen and nitrogen, respectively, and the total amount of hydrogen present in the films. Using the results obtained from these methods the film characteristics were determined as a function of the deposition conditions. .

Enhancement of photoluminescence from nanocrystal β-FeSi2/SiO2 composite and relaxation of thermal quenching

NASA Astrophysics Data System (ADS)

Maeda, Yoshihito

2017-05-01

We have investigated the thermal quenching behavior of photoluminescence (PL) from β-FeSi2 (β-NC) embedded in Si (β-NC/Si) and SiO2 (β-NC/SiO2). The β-NC/SiO2 composite was prepared directly from the β-NC/Si composite by selective oxidation. In the β-NC/SiO2 composite, we found an increase in the critical temperature, which indicates the relaxation of thermal quenching for PL intensity. Furthermore, we observed a clear PL spectrum including the intrinsic A band PL at 300 K; however, the PL intensity was extremely low. Rutherford backscattering spectrometry (RBS) and photocarrier injection PL (PCI-PL) measurements revealed the reason why the β-NC/Si composites were maintained after oxidation. We discussed the thermal quenching behavior of both samples on the basis of a thermal activation model of holes from valence band wells at the heterointerface and confirmed that this model was appropriate for understanding the thermal quenching of these composites.

Certified ion implantation fluence by high accuracy RBS.

PubMed

Colaux, Julien L; Jeynes, Chris; Heasman, Keith C; Gwilliam, Russell M

2015-05-07

From measurements over the last two years we have demonstrated that the charge collection system based on Faraday cups can robustly give near-1% absolute implantation fluence accuracy for our electrostatically scanned 200 kV Danfysik ion implanter, using four-point-probe mapping with a demonstrated accuracy of 2%, and accurate Rutherford backscattering spectrometry (RBS) of test implants from our quality assurance programme. The RBS is traceable to the certified reference material IRMM-ERM-EG001/BAM-L001, and involves convenient calibrations both of the electronic gain of the spectrometry system (at about 0.1% accuracy) and of the RBS beam energy (at 0.06% accuracy). We demonstrate that accurate RBS is a definitive method to determine quantity of material. It is therefore useful for certifying high quality reference standards, and is also extensible to other kinds of samples such as thin self-supporting films of pure elements. The more powerful technique of Total-IBA may inherit the accuracy of RBS.

Automatic energy calibration algorithm for an RBS setup

DOE Office of Scientific and Technical Information (OSTI.GOV)

Silva, Tiago F.; Moro, Marcos V.; Added, Nemitala

2013-05-06

This work describes a computer algorithm for automatic extraction of the energy calibration parameters from a Rutherford Back-Scattering Spectroscopy (RBS) spectrum. Parameters like the electronic gain, electronic offset and detection resolution (FWHM) of a RBS setup are usually determined using a standard sample. In our case, the standard sample comprises of a multi-elemental thin film made of a mixture of Ti-Al-Ta that is analyzed at the beginning of each run at defined beam energy. A computer program has been developed to extract automatically the calibration parameters from the spectrum of the standard sample. The code evaluates the first derivative ofmore » the energy spectrum, locates the trailing edges of the Al, Ti and Ta peaks and fits a first order polynomial for the energy-channel relation. The detection resolution is determined fitting the convolution of a pre-calculated theoretical spectrum. To test the code, data of two years have been analyzed and the results compared with the manual calculations done previously, obtaining good agreement.« less

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meneghini, Matteo, E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, Gaudenzio; Zanoni, Enrico

2015-10-15

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS);more » (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))« less

Simulation of RBS spectra with known 3D sample surface roughness

NASA Astrophysics Data System (ADS)

Malinský, Petr; Siegel, Jakub; Hnatowicz, Vladimir; Macková, Anna; Švorčík, Václav

2017-09-01

The Rutherford Backscattering Spectrometry (RBS) is a technique for elemental depth profiling with a nanometer depth resolution. Possible surface roughness of analysed samples can deteriorate the RBS spectra and makes their interpretation more difficult and ambiguous. This work describes the simulation of RBS spectra which takes into account real 3D morphology of the sample surface obtained by AFM method. The RBS spectrum is calculated as a sum of the many particular spectra obtained for randomly chosen particle trajectories over sample 3D landscape. The spectra, simulated for different ion beam incidence angles, are compared to the experimental ones measured with 2.0 MeV 4He+ ions. The main aim of this work is to obtain more definite information on how a particular surface morphology and measuring geometry affects the RBS spectra and derived elemental depth profiles. A reasonable agreement between the measured and simulated spectra was found and the results indicate that the AFM data on the sample surface can be used for the simulation of RBS spectra.

Theoretical approach to oxygen atom degradation of silver

NASA Technical Reports Server (NTRS)

Fromhold, Albert T., Jr.; Noh, Seung; Beshears, Ronald; Whitaker, Ann F.; Little, Sally A.

1987-01-01

Based on available Rutherford backscattering spectrometry (RBS), proton induced X-ray emission (PIXE) and ellipsometry data obtained on silver specimens subjected to atomic oxygen attack in low Earth orbit STS flight 41-G, a theory was developed to model the oxygen atom degradation of silver. The diffusion of atomic oxygen in a microscopically nonuniform medium is an essential constituent of the theory. The driving force for diffusion is the macroscopic electrochemical potential gradient developed between the specimen surface exposed to the ambient and the bulk of the silver specimen. The longitudinal electric effect developed parallel to the gradient is modified by space charge of the diffusing charged species. Lateral electric fields and concentration differences also exist due to the nonuniform nature of the medium. The lateral concentration differences are found to be more important than the lateral electric fields in modifying the diffusion rate. The model was evaluated numerically. Qualitative agreement exists between the kinetics predicted by the theory and kinetic data taken in ground-based experiments utilizing a plasma asher.

MoS2 thin films prepared by sulfurization

NASA Astrophysics Data System (ADS)

Sojková, M.; Chromik, Å.; Rosová, A.; Dobročka, E.; Hutár, P.; Machajdík, D.; Kobzev, A. P.; Hulman, M.

2017-08-01

Sulfurization of a Mo layer is one of the most used methods for preparation of thin MoS2 films. In the method, a sulfur powder and Mo covered substrate are placed in different positions within a furnace, and heated separately. This requires a furnace having at least two zones. Here, we present a simplified version of the method where a one-zone tube furnace was used. A molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800°C. Mo films transform into MoS2 in vapors of sulphur at high temperatures. As-prepared films were characterized by number of techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman, Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). It appears that one-zone sulfurization, with just one annealing temperature used, is a suitable method for fabrication of MoS2 thin films. This method is fast, cheap and easy to scale up.

Enhancement of Ag nanoparticles concentration by prior ion implantation

NASA Astrophysics Data System (ADS)

Mu, Xiaoyu; Wang, Jun; Liu, Changlong

2017-09-01

Thermally grown SiO2 layer on Si substrates were singly or sequentially implanted with Zn or Cu and Ag ions at the same fluence of 2 × 1016/cm2. The profiles of implanted species, structure, and spatial distribution of the formed nanoparticles (NPs) have been characterized by the cross-sectional transmission electron microscope (XTEM) and Rutherford backscattering spectrometry (RBS). It is found that pre-implantation of Zn or Cu ions could suppress the self sputtering of Ag atoms during post Ag ion implantation, which gives rise to fabrication of Ag NPs with a high density. Moreover, it has also been demonstrated that the suppressing effect strongly depends on the applied energy and mobility of pre-implanted ions. The possible mechanism for the enhanced Ag NPs concentration has been discussed in combination with SRIM simulations. Both vacancy-like defects acting as the increased nucleation sites for Ag NPs and a high diffusivity of prior implanted ions in SiO2 play key roles in enhancing the deposition of Ag implants.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

NASA Astrophysics Data System (ADS)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

PubMed

Dechana, A; Thamboon, P; Boonyawan, D

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

Ion irradiation of AZO thin films for flexible electronics

NASA Astrophysics Data System (ADS)

Boscarino, Stefano; Torrisi, Giacomo; Crupi, Isodiana; Alberti, Alessandra; Mirabella, Salvatore; Ruffino, Francesco; Terrasi, Antonio

2017-02-01

Aluminum doped Zinc oxide (AZO) is a promising transparent conductor for solar cells, displays and touch-screen technologies. The resistivity of AZO is typically improved by thermal annealing at temperatures not suitable for plastic substrates. Here we present a non-thermal route to improve the electrical and structural properties of AZO by irradiating the TCO films with O+ or Ar+ ion beams (30-350 keV, 3 × 1015-3 × 1016 ions/cm2) after the deposition on glass and flexible polyethylene naphthalate (PEN). X-ray diffraction, optical absorption, electrical measurements, Rutherford Backscattering Spectrometry and Atomic Force Microscopy evidenced an increase of the crystalline grain size and a complete relief of the lattice strain upon ion beam irradiation. Indeed, the resistivity of thin AZO films irradiated at room temperature decreased of two orders of magnitude, similarly to a thermal annealing at 400 °C. We also show that the improvement of the electrical properties does not simply depend on the strain or polycrystalline domain size, as often stated in the literature.

Preparation of thin-film (Ba(0.5),Sr(0.5))TiO3 by the laser ablation technique and electrical properties

NASA Astrophysics Data System (ADS)

Yoon, Soon-Gil; Lee, Jai-Chan; Safari, A.

1994-09-01

The chemical composition and electrical properties were investigated for epitaxially crystallized (Ba(0.5),Sr(0.5))TiO3 (BST) films deposited on Pt/MgO and YBa2Cu3O(7-x) (YBCO)/MgO substrates by the laser ablation technique. Rutherford backscattering spectroscopy analysis shows that thin films on Pt/MgO have almost the same stoichiometric composition as the target material. Films deposited at 600 C exhibited an excellent epitaxial growth, a dielectric constant of 430, and a dissipation factor of 0.02 at 10 kHz frequency. They have a charge storage density of 40 fC/sq micron at an applied electric field of 0.15 MV/cm. Leakage current density of BST thin films on Pt/MgO was smaller than on YBCO/MgO. Their leakage current density is about 0.8 microA/sq cm at an applied electric field of 0.15 MV/cm.

Mechanical properties and structure evolution of single-crystalline silicon irradiated by 1 MeV Au+ and Cu+ ions

NASA Astrophysics Data System (ADS)

Liang, Wei; Zhu, Fei; Ling, Yunhan; Liu, Kezhao; Hu, Yin; Pan, Qifa; Chen, Limin; Zhang, Zhengjun

2018-05-01

Mechanical and structural evolutions of single-crystalline silicon irradiated by a series of doses 1 MeV Au+ ions and Cu+ ions are characterized by Surface laser-acoustic wave spectroscopy by (LA wave), Rutherford backscattering spectrometry and channeling (RBS/C) and transmission electron microscopy (TEM). The behavior of implanted Au+ and Cu+ ions was also simulated by using Stopping and range of ions in matter (SRIM) software package, respectively. It is demonstrated that LA wave and RBS could be applied for accurate evaluation of the TEM observed amorphous layer's thickness. The modified mechanical properties depend on the species and the dose of implantation. For 1 MeV Au+ ions, the threshold dose of completely amorphous is 5 × 1014 atoms/cm2, while the one for Cu+ ions is 5 × 1015 atoms/cm2. Upon completely amorphous, the young's modulus and layer density decreased significantly while saturated with the dose increasing sequentially.

Characterization of TiCN coatings deposited by magnetron sputter-ion plating process: RBS and GDOS complementary analyses

NASA Astrophysics Data System (ADS)

Freire, F. L., Jr.; Senna, L. F.; Achete, C. A.; Hirsch, T.

1998-03-01

Hard TiCN films were deposited by dc-magnetron sputter-ion plating technique onto high-speed carbon steel S-6-5-2 (M 2). For selected deposition conditions, TiCN films were also deposited onto Si substrates. A Ti target was sputtered in ArCH 4N 2 atmosphere. The argon flux (12 sccm) was fixed and corresponds to 90% of the total flux, whereas the N 2 flux ranged from 3% to 9% of the total flux. The total pressure in the chamber during film deposition was 8-9 × 10 -2Pa. The substrate bias, Vb, was between 0 and -140V and the substrate temperature, Ts, was 350°C. Film composition and depth profile of the elements were obtained by Rutherford backscattering spectrometry (RBS) and glow discharge optical spectroscopy (GDOS). Some limitations of both techniques in analysing TiCN films were presented. The effect of methane poisoing of the Ti target and how it influences the film composition was discussed.

Cobalt and sulfur co-doped nano-size TiO2 for photodegradation of various dyes and phenol.

PubMed

Siddiqa, Asima; Masih, Dilshad; Anjum, Dalaver; Siddiq, Muhammad

2015-11-01

Various compositions of cobalt and sulfur co-doped titania nano-photocatalyst are synthesized via sol-gel method. A number of techniques including X-ray diffraction (XRD), ultraviolet-visible (UV-Vis), Rutherford backscattering spectrometry (RBS), thermal gravimetric analysis (TGA), Raman, N2 sorption, electron microscopy are used to examine composition, crystalline phase, morphology, distribution of dopants, surface area and optical properties of synthesized materials. The synthesized materials consisted of quasispherical nanoparticles of anatase phase exhibiting a high surface area and homogeneous distribution of dopants. Cobalt and sulfur co-doped titania demonstrated remarkable structural and optical properties leading to an efficient photocatalytic activity for degradation of dyes and phenol under visible light irradiations. Moreover, the effect of dye concentration, catalyst dose and pH on photodegradation behavior of environmental pollutants and recyclability of the catalyst is also examined to optimize the activity of nano-photocatalyst and gain a better understanding of the process. Copyright © 2015. Published by Elsevier B.V.

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Meneghini, Matteo; Zhu, Dandan; Humphreys, Colin J.; Berti, Marina; Gasparotto, Andrea; Cesca, Tiziana; Vinattieri, Anna; Bogani, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico

2015-10-01

This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i)).

Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

Development of quantitative laser ionization mass spectrometry (LIMS). Final report, 1 Aug 87-1 Jan 90

DOE Office of Scientific and Technical Information (OSTI.GOV)

Odom, R.W.

1991-06-04

The objective of the research was to develop quantitative microanalysis methods for dielectric thin films using the laser ionization mass spectrometry (LIMS) technique. The research involved preparation of thin (5,000 A) films of SiO2, Al2O3, MgF2, TiO2, Cr2O3, Ta2O5, Si3N4, and ZrO2, and doping these films with ion implant impurities of 11B, 40Ca, 56Fe, 68Zn, 81Br, and 121Sb. Laser ionization mass spectrometry (LIMS), secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) were performed on these films. The research demonstrated quantitative LIMS analysis down to detection levels of 10-100 ppm, and led to the development of (1) a compoundmore » thin film standards product line for the performing organization, (2) routine LIMS analytical methods, and (3) the manufacture of high speed preamplifiers for time-of-flight mass spectrometry (TOF-MS) techniques.« less

P-type ZnO:N Films Prepared by Thermal Oxidation of Zn3N2

NASA Astrophysics Data System (ADS)

Zhang, Bin; Li, Min; Wang, Jian-Zhong; Shi, Li-Qun

2013-02-01

We prepare p-type ZnO:N films by annealing Zn3N2 films in oxygen over a range of temperatures. The prepared films are characterized by various techniques, such as Rutherford backscattering spectroscopy, x-ray diffraction, x-ray photoemission spectroscopy, the Hall effect and photoluminescence spectra. The results show that the Zn3N2 films start to transform to ZnO at 300°C and the N content decreases with an increase in annealing temperature. N has two local chemical states: zinc oxynitride (ZnO1-xNx) and substitutional NO in O-rich local environments (α -NO). The conduction type changes from n-type to p-type upon oxidation at 400-600°C, indicating that N is an effective acceptor in the ZnO film. The photoluminescence spectra show the UV emission and defect-related emissions of ZnO:N films. The mechanism and efficiency of p-type doping are briefly discussed.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

PubMed Central

2013-01-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer. PMID:24138985

Study of iodine migration in zirconia using stable and radioactive ion implantation

NASA Astrophysics Data System (ADS)

Chevarier, N.; Brossard, F.; Chevarier, A.; Crusset, D.; Moncoffre, N.

1998-03-01

The large uranium fission cross section leading to iodine and the behaviour of this element in the cladding tube during energy production and afterwards during waste storage is a crucial problem, especially for 129I which is a very long half-life isotope ( T = 1.59 × 10 7yr). Since a combined external and internal oxidation of the zircaloy cladding tube occurs during the reactor processing, iodine diffusion parameters in zirconia are needed. In order to obtain these data, stable iodine atoms were first introduced by ion implantation into zirconia with an energy of 200 keV and a dose equal to 8 × 10 15at cm -2. Diffusion profiles were measured using 3 MeV alpha-particle Rutherford Backscattering Spectrometry at each step of the annealing procedure between 700°C and 900°C. In such experiments a reduced iodine concentration was observed, which correlated to a diffusion-like process. Similar analysis has been performed using radioactive 131I implanted at a very low dose of 10 9 at cm -2. In this case the iodine release is deduced from gamma-ray spectroscopy measurements. The results are discussed in this paper.

Structural evaluation of reduced graphene oxide in graphene oxide during ion irradiation: X-ray absorption spectroscopy and in-situ sheet resistance studies

NASA Astrophysics Data System (ADS)

Saravanan, K.; Jayalakshmi, G.; Suresh, K.; Sundaravel, B.; Panigrahi, B. K.; Phase, D. M.

2018-03-01

We report the structural evolution of reduced graphene oxide (rGO) in graphene oxide (GO) flakes during 1 MeV Si+ ion irradiation. In-situ electrical resistivity measurements facilitate monitoring the sheet resistance with the increase in the fluence. The electrical sheet resistance of the GO flake shows the exponential decay behaviour with the increasing ion fluence. Raman spectra of the GO flake reveal the increase in the ID/IG ratio, indicating restoration of the sp2 network upon irradiation. The C/O ratio estimated from resonant Rutherford backscattering spectrometry analysis directly evidenced the reduction of oxygen moieties upon irradiation. C K-edge X-ray absorption near edge structure spectra reveal the restoration of C=C sp2-hybridized carbon atoms and the removal of oxygen-containing functional groups in the GO flake. STM data reveal the higher conductance in the rGO regime in comparison with the regime, where the oxygen functional groups are present. The experimental investigation demonstrates that the ion irradiation can be employed for efficient reduction of GO with tunable electrical and structural properties.

Formation of iron disilicide on amorphous silicon

NASA Astrophysics Data System (ADS)

Erlesand, U.; Östling, M.; Bodén, K.

1991-11-01

Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski <111> silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

Ion Beam Analysis of Iridium-Based TES for Microcalorimeter Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gomes, M. Ribeiro; Galeazzi, M.; Bogorin, D.

2009-12-16

The physical properties of thin multilayer structures are deeply related to the crystalline quality and stoichiometry of the films. The interface roughness/mixing require a detailed study to determine its influence on the growth processes and surface topography. This is an important aspect when we have lattice mismatch between the superconducting thin-films and the substrates, and a high reliability/reproducibility is required as for large array microcalorimeter applications, as in the case of the MARE experiment, designed to measure the mass of the neutrino with sub-eV sensitivity by measuring the beta decay of {sup 187}Re with cryogenic microcalorimeters. Ion beam analysis techniquesmore » are ideal to determine the thickness and concentration profiles of the chemical species in ultra-thin films. Here we present the results on the Ir-based superconducting films deposited on Si-substrates based on systematic investigations of the concentration depth profiles of the multilayer structure using 2.0 MeV {sup 4}He{sup +} ions for high resolution Rutherford Backscattering Spectrometry combined with X-Ray Reflectrometry to evaluate the interface/roughness mixing and the crystalline quality in the TES prototypes.« less

Radiation effects on interface reactions of U/Fe, U/(Fe+Cr), and U/(Fe+Cr+Ni)

DOE PAGES

Shao, Lin; Chen, Di; Wei, Chaochen; ...

2014-10-01

We study the effects of radiation damage on interdiffusion and intermetallic phase formation at the interfaces of U/Fe, U/(Fe + Cr), and U/(Fe + Cr + Ni) diffusion couples. Magnetron sputtering is used to deposit thin films of Fe, Fe + Cr, or Fe + Cr + Ni on U substrates to form the diffusion couples. One set of samples are thermally annealed under high vacuum at 450 C or 550 C for one hour. A second set of samples are annealed identically but with concurrent 3.5 MeV Fe++ ion irradiation. The Fe++ ion penetration depth is sufficient to reachmore » the original interfaces. Rutherford backscattering spectrometry analysis with high fidelity spectral simulations is used to obtain interdiffusion profiles, which are used to examine differences in U diffusion and intermetallic phase formation at the buried interfaces. For all three diffusion systems, Fe++ ion irradiations enhance U diffusion. Furthermore, the irradiations accelerate the formation of intermetallic phases. In U/Fe couples, for example, the unirradiated samples show typical interdiffusion governed by Fick’s laws, while the irradiated ones show step-like profiles influenced by Gibbs phase rules.« less

Vanadium supersaturated silicon system: a theoretical and experimental approach

NASA Astrophysics Data System (ADS)

Garcia-Hemme, Eric; García, Gregorio; Palacios, Pablo; Montero, Daniel; García-Hernansanz, Rodrigo; Gonzalez-Diaz, Germán; Wahnon, Perla

2017-12-01

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

Failure analysis of the lithium battery: A study of the header deposit on the cell top and diffusion within the electrode glass seal using nuclear microanalysis and FFTIR spectroscopy

NASA Technical Reports Server (NTRS)

Hassan, Razi A.

1991-01-01

The Solid Rocket Booster Range Safety System (SRBRSS) uses a lithium/poly-carbon monofluoride primary battery as a source of electrical power. After cell fabrication and activation, some battery cells have shown self discharge. One possible source of this cell discharge has been suggested to be the formation and growth of a conducting crystallized chemical compound across the glass bead insulator, electrically shorting the glass bead to the casing. This laboratory has begun an analysis of this compound, the glass seal holding the cathode into place, and the cell electrolyte, using Fast Fourier Transform Infrared (FFTIR) Analysis, Rutherford Backscattering Spectroscopy (RBS), and Nuclear Reaction Microanalysis. Preliminary measurements have confirmed the existence of lithium, nitrogen, fluorine, and oxygen on a reddish-brown deposit covering parts of the glass seal holding the positive electrode in place. Cells using Li metal electrodes, have many advantages over conventional primary batteries. One principal disadvantage of using Li batteries on a commercial basis would be the environmental impact of the fluorocarbon material. Another would be the relatively high expense of (CF)n.

Fe-Al interface intermixing and the role of Ti, V, and Zr as a stabilizing interlayer at the interface

NASA Astrophysics Data System (ADS)

Priyantha, W.; Smith, R. J.; Chen, H.; Kopczyk, M.; Lerch, M.; Key, C.; Nachimuthu, P.; Jiang, W.

2009-03-01

Fe-Al bilayer interfaces with and without interface stabilizing layers (Ti, V, Zr) were fabricated using dc magnetron sputtering. Intermixing layer thickness and the effectiveness of the stabilizing layer (Ti, V, Zr) at the interface were studied using Rutherford backscattering spectrometry (RBS) and x-ray reflectometry (XRR). The result for the intermixing thickness of the AlFe layer is always higher when Fe is deposited on Al as compared to when Al is deposited on Fe. By comparing measurements with computer simulations, the thicknesses of the AlFe layers were determined to be 20.6 Å and 41.1 Å for Al/Fe and Fe/Al bilayer systems, respectively. The introduction of Ti and V stabilizing layers at the Fe-Al interface reduced the amount of intermixing between Al and Fe, consistent with the predictions of model calculations. The Zr interlayer, however, was ineffective in stabilizing the Fe-Al interface in spite of the chemical similarities between Ti and Zr. In addition, analysis suggests that the Ti interlayer is not effective in stabilizing the Fe-Al interface when the Ti interlayer is extremely thin (˜3 Å) for these sputtered metallic films.

Laser-deposited thin films of biocompatible ceramic

NASA Astrophysics Data System (ADS)

Jelinek, Miroslav; Olsan, V.; Jastrabik, Lubomir; Dostalova, Tatjana; Himmlova, Lucia; Kadlec, Jaromir; Pospichal, M.; Simeckova, M.; Fotakis, Costas

1995-03-01

Thin films of biocompatible materials such as hydroxylapatite (HA) - Ca10 (PO4)6(OH)2 were deposited by laser ablation technique. The films of HA were created on Ti substrates by KrF laser. The layers were deposited in vacuum, in pure H2O vapors (pressure 2 X 10-3 mbar - 2 X 10-1 mbar), and in Ar/H2O vapor mixture. Influence of laser energy density ET (3 Jcm-2, 13 Jcm-2) and substrate temperature Tg (500 degree(s)C - 760 degree(s)C) on the film parameters was studied. Two different technological processes were used for HA target preparation. Films and targets were characterized by Rutherford backscattering analysis (RBS), particle induced x-ray emission (PIXE), x-ray diffraction (XRD), scanning electron microscopy (SEM) and by Knoop microhardness and scratch test. The best crystalline HA films were reached in the mixture of Ar/H2O. Higher Tg had to be used for such deposition. Higher Tg was also preferable from the point of film microhardness. Adhesion of films to the substrates in the range of tens of Newtons was measured. The preliminary results of in vitro experiments of films biotolerance and resorbability are also presented.

Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation

NASA Astrophysics Data System (ADS)

Jayalakshmi, G.; Saravanan, K.; Panigrahi, B. K.; Sundaravel, B.; Gupta, Mukul

2018-05-01

The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar+-ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2-hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar+-ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation.

PubMed

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-18

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Synthesis of cobalt nanoparticles on Si (100) by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Attri, Asha; Kumar, Ajit; Verma, Shammi; Ojha, Sunil; Asokan, Kandasami; Nair, Lekha

2013-10-01

We report the growth and characterization of uniform-sized nanoparticles of cobalt on n-type silicon (100) substrates by swift heavy ion (SHI) irradiation. The Co thin films of 25-nm thicknesses were grown by e-beam evaporation and irradiated with two different types of ions, 45-MeV Li3+ and 100-MeV O7+ ions with fluences ranging from 1 × 1011 to 1 × 1013 ions/cm2. SHI irradiation, with the beam rastered over the area of the film, resulted in the restructuring of the film into a dense array of Co nanostructures. Surface topography studied by atomic force microscopy revealed narrowed size distributions, with particle sizes ranging from 20 to 50 nm, formed through a self-organized process. Ion fluence-dependent changes in crystallinity of the Co nanostructures were determined by glancing angle X-ray diffraction. Rutherford backscattering spectroscopy analysis showed the absence of beam-induced mixing in this system. Surface restructuring and beam-induced crystallization are the dominant effects, with the nanoparticle size and density being dependent on the ion fluence. Results are analyzed in the context of molecular dynamics calculations of electron-lattice energy transfer.

Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Wertheim, Alex

A series of pyrite thin films were synthesized using a novel sequential evaporation technique to study the effects of substrate temperature on deposition rate and micro-structure of the deposited material. Pyrite was deposited in a monolayer-by-monolayer fashion using sequential evaporation of Fe under high vacuum, followed by sulfidation at high S pressures (typically > 1 mTorr to 1 Torr). Thin films were synthesized using two different growth processes; a one-step process in which a constant growth temperature is maintained throughout growth, and a three-step process in which an initial low temperature seed layer is deposited, followed by a high temperature layer, and then finished with a low temperature capping layer. Analysis methods to analyze the properties of the films included Glancing Angle X-Ray Diffraction (GAXRD), Rutherford Back-scattering Spectroscopy (RBS), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectroscopy (SIMS), 2-point IV measurements, and Hall effect measurements. Our results show that crystallinity of the pyrite thin film improves and grain size increases with increasing substrate temperature. The sticking coefficient of Fe was found to increase with increasing growth temperature, indicating that the Fe incorporation into the growing film is a thermally activated process.

Tunable electronic, electrical and optical properties of graphene oxide sheets by ion irradiation.

PubMed

Jayalakshmi, G; Saravanan, K; Panigrahi, B K; Sundaravel, B; Gupta, Mukul

2018-05-04

The tunable electronic, electrical and optical properties of graphene oxide (GO) sheets were investigated using a controlled reduction by 500 keV Ar + -ion irradiation. The carbon to oxygen ratio of the GO sheets upon the ion beam reduction has been estimated using resonant Rutherford backscattering spectrometry analyses and its effect on the electrical and optical properties of GO sheets has been studied using sheet resistance measurements and photoluminescence (PL) measurements. The restoration of sp 2 -hybridized carbon atoms within the sp 3 matrix is found to be increases with increasing the Ar + -ion fluences as evident from Fourier transform infrared, and x-ray absorption near-edge structure measurements. The decrease in the number of disorder-induced local density of states (LDOSs) within the π-π* gap upon the reduction causes the shifting of PL emission from near infra-red to blue region and decreases the sheet resistance. The improved electrical and optical properties of GO sheets were correlated to the decrease in the number of LDOSs within the π-π* gap. Our experimental investigations suggest ion beam irradiation is one of an effective approaches to reduce GO to RGO and to tailor its electronic, electrical and optical properties.

Dielectric functions, chemical and atomic compositions of the near surface layers of implanted GaAs by In+ ions

NASA Astrophysics Data System (ADS)

Kulik, M.; Kołodyńska, D.; Bayramov, A.; Drozdziel, A.; Olejniczak, A.; Żuk, J.

2018-06-01

The surfaces of (100) GaAs were irradiated with In+ ions. The implanted samples were isobaric annealed at 800 °C and then of dielectric function, the surface atomic concentrations of atoms and also the chemical composition of the near surface layers in these implanted semiconductor samples were obtained. The following investigation methods were used: spectroscopic ellipsometry (SE), Rutherford backscattering spectrometry analyses (RBSA) and X-ray photoelectron spectroscopy (XPS) in the study of the above mentioned quantities, respectively. The change of the shape spectra of the dielectric functions at about 3.0 eV phonon energy, diffusion of In+ ions as well as chemical composition changes were observed after ion implantation and the thermal treatment. Due to displacement of Ga ions from GaAs by the In+ ions the new chemical compound InAs was formed. The relative amounts Ga2O3 and As2O3 ratio increase in the native oxide layers with the fluences increase after the thermal treatment of the samples. Additionally, it was noticed that the quantities of InO2 increase with the increasing values of the irradiated ions before thermal treatment.

Heteroepitaxial growth of ɛ-(AlxGa1-x)2O3 alloy films on c-plane AlN templates by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

2018-04-01

In this study, ɛ-(AlxGa1-x)2O3 alloy films were grown on c-plane AlN templates by mist chemical vapor deposition. The Al content of two samples was determined by Rutherford backscattering analysis. The lattice constant of the ɛ-(AlxGa1-x)2O3 alloy films followed Vegard's law, and the Al contents of other samples were determined to be as high as x = 0.395 by Vegard's law. The direct bandgap was obtained in the range of 5.0-5.9 eV by transmittance measurements. The valence-band offset between ɛ-(Al0.395Ga0.605)2O3 and ɛ-Ga2O3 was analyzed to be 0.2 eV, and the conduction-band offset was calculated to be 0.7 eV by X-ray photoelectron spectroscopy. The ɛ-(AlxGa1-x)2O3/ɛ-Ga2O3 interface band discontinuity was type I. Our experimental results will be important for the actual application of ɛ-(AlxGa1-x)2O3/ɛ-Ga2O3 heterojunction devices.

Measurements of tungsten migration in the DIII-D divertor

NASA Astrophysics Data System (ADS)

Wampler, W. R.; Rudakov, D. L.; Watkins, J. G.; McLean, A. G.; Unterberg, E. A.; Stangeby, P. C.

2017-12-01

An experimental study of migration of tungsten in the DIII-D divertor is described, in which the outer strike point of L-mode plasmas was positioned on a toroidal ring of tungsten-coated metal inserts. Net deposition of tungsten on the divertor just outside the strike point was measured on graphite samples exposed to various plasma durations using the divertor materials evaluation system. Tungsten coverage, measured by Rutherford backscattering spectroscopy (RBS), was found to be low and nearly independent of both radius and exposure time closer to the strike point, whereas farther from the strike point the W coverage was much larger and increased with exposure time. Depth profiles from RBS show this was due to accumulation of thicker mixed-material deposits farther from the strike point where the plasma temperature is lower. These results are consistent with a low near-surface steady-state coverage on graphite undergoing net erosion, and continuing accumulation in regions of net deposition. This experiment provides data needed to validate, and further improve computational simulations of erosion and deposition of material on plasma-facing components and transport of impurities in magnetic fusion devices. Such simulations are underway and will be reported later.

Optical, structural, and nuclear scientific studies of AlGaN with high Al composition

NASA Astrophysics Data System (ADS)

Lin, Tse Yang; Chung, Yee Ling; Li, Lin; Yao, Shude; Lee, Y. C.; Feng, Zhe Chuan; Ferguson, Ian T.; Lu, Weijie

2010-08-01

AlGaN epilayers with higher Al-compositions were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on (0001) sapphire. Trimethylgallium (TMGa), trimethylaluminium (TMAl) and NH3 were used as the source precursors for Ga, Al, and N, respectively. A 25 nm AlN nucleation layer was first grown at low-temperature of 590 °C at 300 Torr. Followed, AlxGa1-xN layers were grown at 1080 °C on low-temperature AlN nucleation layers. The heterostructures were characterized by a series of techniques, including x-ray diffraction (XRD), Rutherford backscattering (RBS), photoluminescence (PL), scanning electron microscopy (SEM) and Raman scattering. Precise Al compositions were determined through XRD, RBS, and SEM combined measurements. Room Temperature Raman Scattering spectra shows three major bands from AlGaN alloys, which are AlN-like, A1 longitudinal optical (LO) phonon modes, and E2 transverse optical (TO) band, respectively, plus several peak comes from the substrate. Raman spectral line shape analysis lead to an optical determination of the electrical property free carrier concentration of AlGaN. The optical properties of AlGaN with high Al composition were presented here.

Effects of length dispersity and film fabrication on the sheet resistance of copper nanowire transparent conductors

NASA Astrophysics Data System (ADS)

Borchert, James W.; Stewart, Ian E.; Ye, Shengrong; Rathmell, Aaron R.; Wiley, Benjamin J.; Winey, Karen I.

2015-08-01

Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs.Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs. Electronic supplementary information (ESI) available: Contains calibration curve for %T vs. area fraction. See DOI: 10.1039/c5nr03671b

Ion Beam Facility at the University of Chile; Applications and Basic Research

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, P. A.; Morales, J. R.; Cancino, S.

2010-08-04

The main characteristics of the ion beam facility based on a 3.75 MeV Van de Graaff accelerator at the University of Chile are described at this work. Current activities are mainly focused on the application of the Ion Beam Analysis techniques for environmental, archaeological, and material science analysis. For instance, Rutherford Backscattering Spectrometry (RBS) is applied to measure thin gold film thickness which are used to determine their resistivity and other electrical properties. At this laboratory the Proton Induced X-Ray Emission (PIXE) and Proton Elastic Scattering Analysis (PESA) methodologies are extensively used for trace element analysis of urban aerosols (Santiago,more » Ciudad de Mexico). A similar study is being carried out at the Antarctica Peninsula. Characterization studies on obsidian and vitreous dacite samples using PIXE has been also perform allowing to match some of these artifacts with geological source sites in Chile.Basic physics research is being carried out by measuring low-energy cross section values for the reactions {sup 63}Cu(d,p){sup 64}Cu and {sup Nat}Zn(p,x){sup 67}Ga. Both radionuclide {sup 64}Cu and {sup 67}Ga are required for applications in medicine. Ongoing stopping power cross section measurements of proton and alphas on Pd, Cu, Bi and Mylar are briefly discussed.« less

Direct Observation of Defect Range and Evolution in Ion-Irradiated Single Crystalline Ni and Ni Binary Alloys.

PubMed

Lu, Chenyang; Jin, Ke; Béland, Laurent K; Zhang, Feifei; Yang, Taini; Qiao, Liang; Zhang, Yanwen; Bei, Hongbin; Christen, Hans M; Stoller, Roger E; Wang, Lumin

2016-02-01

Energetic ions have been widely used to evaluate the irradiation tolerance of structural materials for nuclear power applications and to modify material properties. It is important to understand the defect production, annihilation and migration mechanisms during and after collision cascades. In this study, single crystalline pure nickel metal and single-phase concentrated solid solution alloys of 50%Ni50%Co (NiCo) and 50%Ni50%Fe (NiFe) without apparent preexisting defect sinks were employed to study defect dynamics under ion irradiation. Both cross-sectional transmission electron microscopy characterization (TEM) and Rutherford backscattering spectrometry channeling (RBS-C) spectra show that the range of radiation-induced defect clusters far exceed the theoretically predicted depth in all materials after high-dose irradiation. Defects in nickel migrate faster than in NiCo and NiFe. Both vacancy-type stacking fault tetrahedra (SFT) and interstitial loops coexist in the same region, which is consistent with molecular dynamics simulations. Kinetic activation relaxation technique (k-ART) simulations for nickel showed that small vacancy clusters, such as di-vacancies and tri-vacancies, created by collision cascades are highly mobile, even at room temperature. The slower migration of defects in the alloy along with more localized energy dissipation of the displacement cascade may lead to enhanced radiation tolerance.

Ion Beam Facility at the University of Chile; Applications and Basic Research

NASA Astrophysics Data System (ADS)

Miranda, P. A.; Morales, J. R.; Cancino, S.; Dinator, M. I.; Donoso, N.; Sepúlveda, A.; Ortiz, P.; Rojas, S.

2010-08-01

The main characteristics of the ion beam facility based on a 3.75 MeV Van de Graaff accelerator at the University of Chile are described at this work. Current activities are mainly focused on the application of the Ion Beam Analysis techniques for environmental, archaeological, and material science analysis. For instance, Rutherford Backscattering Spectrometry (RBS) is applied to measure thin gold film thickness which are used to determine their resistivity and other electrical properties. At this laboratory the Proton Induced X-Ray Emission (PIXE) and Proton Elastic Scattering Analysis (PESA) methodologies are extensively used for trace element analysis of urban aerosols (Santiago, Ciudad de Mexico). A similar study is being carried out at the Antarctica Peninsula. Characterization studies on obsidian and vitreous dacite samples using PIXE has been also perform allowing to match some of these artifacts with geological source sites in Chile. Basic physics research is being carried out by measuring low-energy cross section values for the reactions 63Cu(d,p)64Cu and NatZn(p,x)67Ga. Both radionuclide 64Cu and 67Ga are required for applications in medicine. Ongoing stopping power cross section measurements of proton and alphas on Pd, Cu, Bi and Mylar are briefly discussed.

Ag implantation-induced modification of Ni-Ti shape memory alloy thin films

NASA Astrophysics Data System (ADS)

Kumar, V.; Singhal, R.; Vishnoi, R.; Banerjee, M. K.; Sharma, M. C.; Asokan, K.; Kumar, M.

2017-08-01

Nanocrystalline thin films of Ni-Ti shape memory alloy are deposited on an Si substrate by the DC-magnetron co-sputtering technique and 120 keV Ag ions are implanted at different fluences. The thickness and composition of the pristine films are determined by Rutherford Backscattering Spectrometry (RBS). X-Ray diffraction (XRD), atomic force microscopy (AFM) and four-point probe resistivity methods have been used to study the structural, morphological and electrical transport properties. XRD analysis has revealed the existence of martensitic and austenite phases in the pristine film and also evidenced the structural changes in Ag-implanted Ni-Ti films at different fluences. AFM studies have revealed that surface roughness and grain size of Ni-Ti films have decreased with an increase in ion fluence. The modifications in the mechanical behaviour of implanted Ni-Ti films w.r.t pristine film is determined by using a Nano-indentation tester at room temperature. Higher hardness and the ratio of higher hardness (H) to elastic modulus (Er) are observed for the film implanted at an optimized fluence of 9 × 1015 ions/cm2. This improvement in mechanical behaviour could be understood in terms of grain refinement and dislocation induced by the Ag ion implantation in the Ni-Ti thin films.

Study of the effect of common infusions on glass ionomers using the PIXE and RBS techniques

NASA Astrophysics Data System (ADS)

Verón, María Gisela; Pérez, Pablo Daniel; Suárez, Sergio Gabriel; Prado, Miguel Oscar

2017-12-01

The effect of four commonly consumed beverages as mineral water, coffee, tea and mate tea on the elemental composition of a commercial glass ionomer was studied using Particle Induced X-ray Emission (PIXE) and Rutherford backscattering (RBS) techniques. We found that after immersion in acidic media, some elements as Al, Si and Na are lost from the glass-ionomer whereas others heavier, as K, Ca and La, increase their concentration at the surface. Although the concentration profiles of Al and Si are different in different media, in all of them the Al:Si ratio was close to unity and remained constant for different periods of immersion in all media. The incorporation of K, Mg and Fe to the surface is found for common infusions while for mineral water the glass-ionomer mainly loses F and Na.The RBS technique showed that immersion in different media produced a modification of the density of the glass ionomer surface layer due to the increment of the concentration of heavier elements at the surface. The thickness of the modified surface layer extends up to 3 μm when the immersion time is seven days and more than 6 μm after 33 days of immersion.

Effects of gamma-ray irradiation on the optical properties of amorphous Se100-xHgx thin films

NASA Astrophysics Data System (ADS)

Ahmad, Shabir; Islam, Shama; Nasir, Mohd.; Asokan, K.; Zulfequar, M.

2018-06-01

In this study, the thermal quenching technique was employed to prepare bulk samples of Se100-xHgx (x = 0, 5, 10, 15). Thin films with a thickness of ∼250 nm were deposited on glass substrates using the thermal evaporation technique. These films were irradiated with gamma rays at doses of 25-100 kGy. The elemental compositions of the as-deposited thin films were confirmed by energy dispersive X-ray analysis and Rutherford backscattering spectrometry. X-ray diffraction analysis confirmed the crystalline nature of these thin films upto the dose of 75 kGy. Fourier transform-infrared spectroscopy showed that the concentration of defects decreased after gamma irradiation. Microstructural analysis by field emission scanning electron microscopy indicated that the grain size increases after irradiation. Optical study based on spectrophotometry showed that the optical band gap values of these films increase after the addition of Hg whereas they decrease after gamma irradiation. We found that the absorption coefficient increases with doses up to 75 kGy but decreases at higher doses. These remarkable shifts in the optical band gap and absorption coefficient values are interpreted in terms of the creation and annihilation of defects, which are the main effects produced by gamma irradiation.

Direct Observation of Defect Range and Evolution in Ion-Irradiated Single Crystalline Ni and Ni Binary Alloys

PubMed Central

Lu, Chenyang; Jin, Ke; Béland, Laurent K.; Zhang, Feifei; Yang, Taini; Qiao, Liang; Zhang, Yanwen; Bei, Hongbin; Christen, Hans M.; Stoller, Roger E.; Wang, Lumin

2016-01-01

Energetic ions have been widely used to evaluate the irradiation tolerance of structural materials for nuclear power applications and to modify material properties. It is important to understand the defect production, annihilation and migration mechanisms during and after collision cascades. In this study, single crystalline pure nickel metal and single-phase concentrated solid solution alloys of 50%Ni50%Co (NiCo) and 50%Ni50%Fe (NiFe) without apparent preexisting defect sinks were employed to study defect dynamics under ion irradiation. Both cross-sectional transmission electron microscopy characterization (TEM) and Rutherford backscattering spectrometry channeling (RBS-C) spectra show that the range of radiation-induced defect clusters far exceed the theoretically predicted depth in all materials after high-dose irradiation. Defects in nickel migrate faster than in NiCo and NiFe. Both vacancy-type stacking fault tetrahedra (SFT) and interstitial loops coexist in the same region, which is consistent with molecular dynamics simulations. Kinetic activation relaxation technique (k-ART) simulations for nickel showed that small vacancy clusters, such as di-vacancies and tri-vacancies, created by collision cascades are highly mobile, even at room temperature. The slower migration of defects in the alloy along with more localized energy dissipation of the displacement cascade may lead to enhanced radiation tolerance. PMID:26829570

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

NASA Astrophysics Data System (ADS)

Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

2013-03-01

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

Correlation between increasing tissue ischemia and circulating levels of angiogenic growth factors in peripheral artery disease.

PubMed

Jalkanen, Juho; Hautero, Olli; Maksimow, Mikael; Jalkanen, Sirpa; Hakovirta, Harri

2018-04-21

The aim of the present study was to assess the circulating levels of vascular endothelial growth factor (VEGF) and other suggested therapeutic growth factors with the degree of ischemia in patients with different clinical manifestations of peripheral arterial disease (PAD) according to the Rutherford grades. The study cohort consists of 226 consecutive patients admitted to a Department of Vascular Surgery for elective invasive procedures. PAD patients were grouped according to the Rutherford grades after a clinical assessment. Ankle-brachial pressure indices (ABI) and absolute toe pressure (TP) values were measured. Serum levels of circulating VEGF, hepatocyte growth factor (HGF), basic fibroblast growth factor (bFGF), and platelet derived growth factor (PDGF) were measured from serum and analysed against Rutherford grades and peripheral hemodynamic measurements. The levels of VEGF (P = 0.009) and HGF (P < 0.001) increased significantly as the ischaemic burden became more severe according to the Rutherford grades. PDGF behaved in opposite manner and declined along increasing Rutherford grades (P = 0.004). A significant, inverse correlations between Rutherford grades was detected as follows; VEGF (Pearson's correlation = 0.183, P = 0.004), HGF (Pearson's correlation = 0.253, P < 0.001), bFGF (Pearson's correlation = 0.169, P = 0.008) and PDGF (Pearson's correlation = 0.296, P < 0.001). In addition, VEGF had a clear direct negative correlation with ABI (Pearson's correlation -0.19, P = 0.009) and TP (Pearson's correlation -0.20, P = 0.005) measurements. Our present observations show that the circulating levels of VEGF and other suggested therapeutic growth factors are significantly increased along with increasing ischemia. These findings present a new perspective to anticipated positive effects of gene therapies utilizing VEGF, HGF, and bFGF, because the levels of these growth factors are endogenously high in end-stage PAD. Copyright © 2018 Elsevier Ltd. All rights reserved.

Secret in the Margins: Rutherford's Gold Foil Experiment

ERIC Educational Resources Information Center

Aydin, Sevgi; Hanuscin, Deborah L.

2011-01-01

In this article, the authors describe a lesson that uses the 5E Learning Cycle to help students not only understand the atomic model but also how Ernest Rutherford helped develop it. The lesson uses Rutherford's gold foil experiment to focus on three aspects of the nature of science: the empirical nature of science, the tentativeness of scientific…

Rutherford's Nuclear Model

NASA Astrophysics Data System (ADS)

Heibron, John

2011-04-01

Rutherford's nuclear model originally was a theory of scattering that represented both the incoming alpha particles and their targets as point charges. The assumption that the apha particle, which Rutherford knew to be a doubly ionized helium atom, was a bare nucleus, and the associated assumption that the electronic structure of the atom played no significant role in large-angle scattering, had immediate and profound consequences well beyond the special problem for which Rutherford introduced them. The group around him in Manchester in 1911/12, which included Niels Bohr, Charles Darwin, Georg von Hevesy, and Henry Moseley, worked out some of these consequences. Their elucidation of radioactivity, isotopy, atomic number, and quantization marked an epoch in microphysics. Rutherford's nuclear model was exemplary not only for its fertility and picturability, but also for its radical simplicity. The lecturer will not undertake to answer the baffling question why such simple models work.

Nb 3Sn RRP® strand and Rutherford cable development for a 15 T dipole demonstrator

DOE PAGES

Barzi, E.; Andreev, N.; Li, P.; ...

2016-03-16

Keystoned Rutherford cables made of 28 strands and with a stainless steel core were developed and manufactured using 1 mm Nb3Sn composite wires produced by Oxford Superconducting Technology with 127 and 169 restacks using the Restacked-Rod-Process ®. Furthermore, the performance and properties of these cables were studied to evaluate possible candidates for 15 T accelerator magnets.

Studies on the surface modification of TiN coatings using MEVVA ion implantation with selected metallic species

NASA Astrophysics Data System (ADS)

Ward, L. P.; Purushotham, K. P.; Manory, R. R.

2016-02-01

Improvement in the performance of TiN coatings can be achieved using surface modification techniques such as ion implantation. In the present study, physical vapor deposited (PVD) TiN coatings were implanted with Cr, Zr, Nb, Mo and W using the metal evaporation vacuum arc (MEVVA) technique at a constant nominal dose of 4 × 1016 ions cm-2 for all species. The samples were characterized before and after implantation, using Rutherford backscattering (RBS), glancing incident angle X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical microscopy. Friction and wear studies were performed under dry sliding conditions using a pin-on-disc CSEM Tribometer at 1 N load and 450 m sliding distance. A reduction in the grain size and surface roughness was observed after implantation with all five species. Little variation was observed in the residual stress values for all implanted TiN coatings, except for W implanted TiN which showed a pronounced increase in compressive residual stress. Mo-implanted samples showed a lower coefficient of friction and higher resistance to breakdown during the initial stages of testing than as-received samples. Significant reduction in wear rate was observed after implanting with Zr and Mo ions compared with unimplanted TiN. The presence of the Ti2N phase was observed with Cr implantation.

26Al production: The Allende meteorite (Chihuahua) stellar nucleosynthesis and solar models

NASA Astrophysics Data System (ADS)

Araujo-Escalona, V.; Andrade, E.; Barrón-Palos, L.; Canto, C.; Favela, F.; Huerta, A.; de Lucio, O.; Ortiz, M. E.; Solís, C.; Chávez, E.

2015-07-01

In 1969 a meteorite fell near the small town of Allende, state of Chihuahua in the north of Mexico. Its study yielded information that changed the current understanding of the solar model. In particular traces of 26Al were found. Abundances of that isotope had been seen in the universe and were related to regions of active heavy nucleosynthesis. Its presence on the solar system was unexpected. It is now understood that cosmic rays induce nuclear reactions on materials to produce 26Al, on Earth this is well known and it is the basis of many environmental studies, so it is not only the product of some high metalicity star collapse. Taking advantage of the recently reinforced laboratory infrastructure of the Instituto de Física, at UNAM in Mexico City, we proposed to measure the cross section for 26Al production via some of the most likely reactions, from the nuclear physics point of view (highest Q-values). In this paper the study of the 28Si(d,α)26 Al nuclear reaction is shown. A target is prepared by a mixture of silicon and aluminum powders. It is irradiated with a deuteron beam (≈1 µA current) at the MV CN-Van de Graaff accelerator laboratory. The number of projectiles is deduced by Rutherford Backscattering Spectrometry (RBS). The produced 26Al nuclei are then counted at the Accelerator Mass Spectrometry Laboratory.

Structural and gasochromic properties of WO3 films prepared by reactive sputtering deposition

NASA Astrophysics Data System (ADS)

Yamamoto, S.; Hakoda, T.; Miyashita, A.; Yoshikawa, M.

2015-02-01

The effects of deposition temperature and film thickness on the structural and gasochromic properties of tungsten trioxide (WO3) films used for the optical detection of diluted cyclohexane gas have been investigated. The WO3 films were prepared on SiO2 substrates by magnetron sputtering, with the deposition temperature ranging from 300 to 550 °C in an Ar and O2 gas mixture. The films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), and Rutherford backscattering spectroscopy (RBS). The gasochromic properties of the WO3 films, coated with a catalytic Pt layer, were examined by exposing them to up to 5% cyclohexane in N2 gas. It was found that (001)-oriented monoclinic WO3 films, with a columnar structure, grew at deposition temperatures between 400 and 450 °C. Furthermore, (010)-oriented WO3 films were preferably formed at deposition temperatures higher than 500 °C. The gasochromic characterization of the Pt/WO3 films revealed that (001)-oriented WO3 films, with cauliflower-like surface morphology, were appropriate for the optical detection of cyclohexane gas.

Electron gun with a transmission photocathode for the Joint Institute for Nuclear Research photoinjector

NASA Astrophysics Data System (ADS)

Balalykin, N. I.; Minashkin, V. F.; Nozdrin, M. A.; Shirkov, G. D.; Zelenogorskii, V. V.; Gacheva, E. I.; Potemkin, A. K.; Huran, J.

2017-10-01

Photocathode electron guns are key to the generation of high-quality electron bunches, which are currently the primary source of electrons for linear electron accelerators. The photogun test bench built at the Joint Institute for Nuclear Research (JINR) is currently being used to further develop the hollow (backside irradiated) photocathode concept. A major achievement was the replacement of the hollow photocathode by a technologically more feasible transmission photocathode made from a metal mesh that serves as a substrate for films of various photomaterials. A number of thin-film cathodes on quartz glass substrates are fabricated by photolithography. The vectorial photoeffect (related to the surface-normal component of the wave electric field) is observed and found to significantly affect the quantum efficiency. The dependence of the quantum efficiency of diamond-like carbon photocathodes on the manufacturing technology is investigated. The Rutherford backscattering and elastic recoil detection techniques are combined to carry out an elemental analysis of the films. An estimate of the emittance of a 400 pC electron beam is obtained using the cross-section method.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dechana, A.; Thamboon, P.; Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides highmore » flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.« less

Au Nanoparticle Sub-Monolayers Sandwiched between Sol-Gel Oxide Thin Films

PubMed Central

Della Gaspera, Enrico; Menin, Enrico; Sada, Cinzia

2018-01-01

Sub-monolayers of monodisperse Au colloids with different surface coverage have been embedded in between two different metal oxide thin films, combining sol-gel depositions and proper substrates functionalization processes. The synthetized films were TiO2, ZnO, and NiO. X-ray diffraction shows the crystallinity of all the oxides and verifies the nominal surface coverage of Au colloids. The surface plasmon resonance (SPR) of the metal nanoparticles is affected by both bottom and top oxides: in fact, the SPR peak of Au that is sandwiched between two different oxides is centered between the SPR frequencies of Au sub-monolayers covered with only one oxide, suggesting that Au colloids effectively lay in between the two oxide layers. The desired organization of Au nanoparticles and the morphological structure of the prepared multi-layered structures has been confirmed by Rutherford backscattering spectrometry (RBS), Secondary Ion Mass Spectrometry (SIMS), and Scanning Electron Microscopy (SEM) analyses that show a high quality sandwich structure. The multi-layered structures have been also tested as optical gas sensors. PMID:29538338

Ga flux dependence of Er-doped GaN luminescent thin films

NASA Astrophysics Data System (ADS)

Lee, D. S.; Steckl, A. J.

2002-02-01

Er-doped GaN thin films have been grown on (111) Si substrates with various Ga fluxes in a radio frequency plasma molecular beam epitaxy system. Visible photoluminescence (PL) and electroluminescence (EL) emission at 537/558 nm and infrared (IR) PL emission at 1.5 μm from GaN:Er films exhibited strong dependence on the Ga flux. Both visible and IR PL and visible EL increase with the Ga flux up to the stoichiometric growth condition, as determined by growth rate saturation. Beyond this condition, all luminescence levels abruptly dropped to the detection limit with increasing Ga flux. The Er concentration, measured by secondary ion mass spectroscopy and Rutherford backscattering, decreases with increasing Ga flux under N-rich growth conditions and remains constant above the stoichiometric growth condition. X-ray diffraction indicated that the crystalline quality of the GaN:Er film was improved with increasing Ga flux up to stoichiometric growth condition and then saturated. Er ions in the films grown under N-rich conditions appear much more optically active than those in the films grown under Ga-rich conditions.

Comparison of monomode KTiOPO4 waveguide formed by C3+ ion implantation and Rb+ ion exchange

NASA Astrophysics Data System (ADS)

Cui, Xiao-Jun; Wang, Liang-Ling

2017-02-01

In this work, we report on the formation and characterization of monomode KTiOPO4 waveguide at 1539 nm by 6.0 MeV C3+ ion implantation with the dose of 2×1015 ions/cm2 and Rb+-K+ ion exchange, respectively. The relative intensity of light as a function of effective refractive index of TM modes at 633 nm and 1539 nm for KTiOPO4 waveguide formed by two different methods were compared with the prism coupling technique. The refractive index (nz) profile for the ion implanted waveguide was reconstructed by reflectivity calculation method, and one for the ion exchanged waveguide was by inverse Wentzel-Kramers-Brillouin. The nuclear energy loss versus penetration depth of the C3+ ions implantation into KTiOPO4 was simulated using the Stopping Range of Ions in Matter software. The Rutherford Backscattering Spectrometry spectrum of KTiOPO4 waveguide was analyzed after ions exchanged. The results showed that monomode waveguide at 1539 nm can be formed by ion implantation and Rb+ -K+ ion exchange, respectively.

Synergistically-enhanced ion track formation in pre-damaged strontium titanate by energetic heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh

Latent ion tracks created by energetic heavy ions (12 MeV Ti to 946 MeV Au) in single crystal SrTiO 3 are investigated in this paper using Rutherford backscattering spectrometry and scanning transmission electron microscopy. The results demonstrate that pre-existing irradiation damage, introduced via elastic collision processes, interacts synergistically with the electronic energy deposition from energetic heavy ions to enhance formation of latent ion tracks. The average amorphous cross-section increases with the level of pre-damage and is linearly proportional to the electronic energy loss of the ions, with a slope dependent on the pre-damage level. For the highest energy ions (629more » MeV Xe and 946 MeV Au), the tracks are continuous over the pre-damaged depth, but become discontinuous beyond the pre-damaged region. Finally, this work provides new understanding and insights on ion-solid interactions that significantly impact the interpretation of latent track formation processes, models of amorphization, and the fabrication of electro-ceramic devices.« less

In situ measurement of low-Z material coating thickness on high Z substrate for tokamaks.

PubMed

Mueller, D; Roquemore, A L; Jaworski, M; Skinner, C H; Miller, J; Creely, A; Raman, P; Ruzic, D

2014-11-01

Rutherford backscattering of energetic particles can be used to determine the thickness of a coating of a low-Z material over a heavier substrate. Simulations indicate that 5 MeV alpha particles from an (241)Am source can be used to measure the thickness of a Li coating on Mo tiles between 0.5 and 15 μm thick. Using a 0.1 mCi source, a thickness measurement can be accomplished in 2 h of counting. This technique could be used to measure any thin, low-Z material coating (up to 1 mg/cm(2) thick) on a high-Z substrate, such as Be on W, B on Mo, or Li on Mo. By inserting a source and detector on a moveable probe, this technique could be used to provide an in situ measurement of the thickness of Li coating on NSTX-U Mo tiles. A test stand with an alpha source and an annular solid-state detector was used to investigate the measurable range of low-Z material thicknesses on Mo tiles.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review.

PubMed

Dwivedi, D; Lepkova, K; Becker, T

2017-03-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review

NASA Astrophysics Data System (ADS)

Dwivedi, D.; Lepkova, K.; Becker, T.

2017-03-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed.

Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.

PubMed

Kuchuk, Andrian V; Lytvyn, Petro M; Li, Chen; Stanchu, Hryhorii V; Mazur, Yuriy I; Ware, Morgan E; Benamara, Mourad; Ratajczak, Renata; Dorogan, Vitaliy; Kladko, Vasyl P; Belyaev, Alexander E; Salamo, Gregory G

2015-10-21

We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These polarization-doped p-n junction structures were characterized at the nanoscale by a combination of averaging as well as depth-resolved experimental techniques including: cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, Rutherford backscattering spectrometry, and scanning probe microscopy. We observed that a small miscut in the substrate orientation along with the accumulated strain during growth led to a change in the mosaic structure of the AlxGa1-xN film, resulting in the formation of macrosteps on the surface. Moreover, we found a lateral modulation of charge carriers on the surface which were directly correlated with these steps. Finally, using nanoscale probes of the charge density in cross sections of the samples, we have directly measured, semiquantitatively, both n- and p-type polarization doping resulting from the gradient concentration of the AlxGa1-xN layers.

Composition and optical properties tunability of hydrogenated silicon carbonitride thin films deposited by reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Bachar, A.; Bousquet, A.; Mehdi, H.; Monier, G.; Robert-Goumet, C.; Thomas, L.; Belmahi, M.; Goullet, A.; Sauvage, T.; Tomasella, E.

2018-06-01

Radiofrequency reactive magnetron sputtering was used to deposit hydrogenated amorphous silicon carbonitride (a-SiCxNy:H) at 400 °C by sputtering a silicon target under CH4 and N2 reactive gas mixture. Rutherford backscattering spectrometry revealed that the change of reactive gases flow rate (the ratio R = FN2/(FN2+FCH4)) induced a smooth chemical composition tunability from a silicon carbide-like film for R = 0 to a silicon nitride-like one at R = 1 with a large area of silicon carbonitrides between the two regions. The deconvolution of Fourier Transform InfraRed and X-ray photoelectron spectroscopy spectrum highlighted a shift of the chemical environment of the deposited films corresponding to the changes seen by RBS. The consequence of these observations is that a control of refractive index in the range of [1.9-2.5] at λ = 633 nm and optical bandgap in the range [2 eV-3.8 eV] have been obtained which induces that these coatings can be used as antireflective coatings in silicon photovoltaic cells.

Characterization of a SiC MIS Schottky diode as RBS particle detector

NASA Astrophysics Data System (ADS)

Kaufmann, I. R.; Pick, A. C.; Pereira, M. B.; Boudinov, H. I.

2018-02-01

A 4H-SiC Schottky diode was investigated as a particle detector for Rutherford Backscattering Spectroscopy (RBS) experiment. The device was fabricated on a commercial 4H-SiC epitaxial n-type layer grown onto a 4H-SiC n+ type substrate wafer doped with nitrogen. Hafnium oxide with thickness of 1 nm was deposited by Atomic Layer Deposition and 10 nm of Ni were deposited by sputtering to form the Ni/HfO2/4H-SiC MIS Schottky structure. Current-Voltage curves with variable temperature were measured to extract the real Schottky Barrier Height (0.32 V) and ideality factor values (1.15). Reverse current and Capacitance-Voltage measurements were performed on the 4H-SiC detector and compared to a commercial Si barrier detector acquired from ORTEC. RBS data for four alpha energies (1, 1.5, 2 and 2.5 MeV) were collected from an Au/Si sample using the fabricated SiC and the commercial Si detectors simultaneously. The energy resolution for the fabricated detector was estimated to be between 75 and 80 keV.

Absence of single critical dose for the amorphization of quartz under ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, S.; Pakarinen, O. H.; Backholm, M.; Djurabekova, F.; Nordlund, K.; Keinonen, J.; Wang, T. S.

2018-01-01

In this work, we first simulated the amorphization of crystalline quartz under 50 keV 23 Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eVṡatom-1 . We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eVṡatom-1 . The continued evolution of the SiO2 structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoshino, Yasushi, E-mail: yhoshino@kanagawa-u.ac.jp; Yachida, Gosuke; Inoue, Kodai

2016-06-15

We performed extremely low-energy {sup 16}O{sup +} implantation at 10 keV (R{sub p} ∼ 25 nm) followed by annealing aiming at directly synthesizing an ultrathin Si layer separated by a buried SiO{sub 2} layer in Si(001) substrates, and then investigated feasible condition of recrystallization and stabilization of the superficial Si and the buried oxide layer by significantly low temperature annealing. The elemental compositions were analyzed by Rutherford backscattering (RBS) and secondary ion mass spectroscopy (SIMS). The crystallinity of the superficial Si layer was quantitatively confirmed by ananlyzing RBS-channeling spectra. Cross-sectional morphologies and atomic configurations were observed by transmission electron microscopemore » (TEM). As a result, we succeeded in directly synthesizing an ultrathin single-crystalline silicon layer with ≤20 nm thick separated by a thin buried stoichiometric SiO{sub 2} layer with ≤20 nm thick formed by extremely low-energy {sup 16}O{sup +} implantation followed by surprisingly low temperature annealing at 1050{sup ∘} C.« less

Focused Heavy Ion Nuclear Microprobe facility at the University of North Texas

NASA Astrophysics Data System (ADS)

Guo, B. N.; Yang, C.; El Bouanani, M.; Duggan, J. L.; McDaniel, F. D.

1999-10-01

A Focused Heavy Ion Nuclear Microprobe facility has been constructed at the University of North Texas. The microprobe utilizes two separated Russian magnetic quadrupole quadruplets. The two identical magnetic quadrupole doublet lenses are separated by 2.61 meters. The lens system with ~ 80 times demagnification has the ability to focus proton, alpha particle, or heavier ions down to a spot size of ~ 1 μm. The microprobe components rest on a 7 meter steel beam support with vibration isolation. A computer provides control for the lens power supplies and also the parameters for a post-lens scanning coil to raster-scan the beam across the sample. Up to four detection channels can be used for simultaneous data acquisition under VME control. A RISC workstation is used to collect, display and analyze the data. The data is transferred via ethernet. A detailed description of the facility and data acquisition system along with preliminary testing results on TEM grids with Rutherford Backscattering Spectrometry and the Ion Beam Induced Charge Collection techniques will be presented.

Absence of single critical dose for the amorphization of quartz under ion irradiation.

PubMed

Zhang, S; Pakarinen, O H; Backholm, M; Djurabekova, F; Nordlund, K; Keinonen, J; Wang, T S

2018-01-10

In this work, we first simulated the amorphization of crystalline quartz under 50 keV [Formula: see text]Na ion irradiation with classical molecular dynamics (MD). We then used binary collision approximation algorithms to simulate the Rutherford backscattering spectrometry in channeling conditions (RBS-C) from these irradiated MD cells, and compared the RBS-C spectra with experiments. The simulated RBS-C results show an agreement with experiments in the evolution of amorphization as a function of dose, showing what appears to be (by this measure) full amorphization at about 2.2 eV⋅[Formula: see text]. We also applied other analysis methods, such as angular structure factor, Wigner-Seitz, coordination analysis and topological analysis, to analyze the structural evolution of the irradiated MD cells. The results show that the atomic-level structure of the sample keeps evolving after the RBS signal has saturated, until the dose of about 5 eV⋅[Formula: see text]. The continued evolution of the [Formula: see text] structure makes the definition of what is, on the atomic level, an amorphized quartz ambiguous.

Atomic layer deposition of molybdenum oxide from (N{sup t}Bu){sub 2}(NMe{sub 2}){sub 2}Mo and O{sub 2} plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vos, Martijn F. J.; Macco, Bart; Thissen, Nick F. W.

2016-01-15

Molybdenum oxide (MoO{sub x}) films have been deposited by atomic layer deposition using bis(tert-butylimido)-bis(dimethylamido)molybdenum and oxygen plasma, within a temperature range of 50–350 °C. Amorphous film growth was observed between 50 and 200 °C at a growth per cycle (GPC) around 0.80 Å. For deposition temperatures of 250 °C and higher, a transition to polycrystalline growth was observed, accompanied by an increase in GPC up to 1.88 Å. For all deposition temperatures the O/Mo ratio was found to be just below three, indicating the films were slightly substoichiometric with respect to MoO{sub 3} and contained oxygen vacancies. The high purity of the films was demonstratedmore » in the absence of detectable C and N contamination in Rutherford backscattering measurements, and a H content varying between 3 and 11 at. % measured with elastic recoil detection. In addition to the chemical composition, the optical properties are reported as well.« less

Ionization cross sections of the Au L subshells by electron impact from the L3 threshold to 100 keV

NASA Astrophysics Data System (ADS)

Barros, Suelen F.; Vanin, Vito R.; Maidana, Nora L.; Martins, Marcos N.; García-Alvarez, Juan A.; Santos, Osvaldo C. B.; Rodrigues, Cleber L.; Koskinas, Marina F.; Fernández-Varea, José M.

2018-01-01

We measured the cross sections for Au Lα, Lβ, Lγ, Lℓ and Lη x-ray production by the impact of electrons with energies from the L3 threshold to 100 keV using a thin Au film whose mass thickness was determined by Rutherford Backscattering Spectrometry. The x-ray spectra were acquired with a Si drift detector, which allowed to separate the components of the Lγ multiplet lines. The measured Lα, Lβ, {{L}}{γ }1, L{γ }{2,3,6}, {{L}}{γ }{4,4\\prime }, {{L}}{γ }5, {{L}}{\\ell } and Lη x-ray production cross sections were then employed to derive Au L1, L2 and L3 subshell ionization cross sections with relative uncertainties of 8%, 7% and 7%, respectively; these figures include the uncertainties in the atomic relaxation parameters. The correction for the increase in electron path length inside the Au film was estimated by means of Monte Carlo simulations. The experimental ionization cross sections are about 10% above the state-of-the-art distorted-wave calculations.

SAXS investigations of the morphology of swift heavy ion tracks in α-quartz.

PubMed

Afra, B; Rodriguez, M D; Trautmann, C; Pakarinen, O H; Djurabekova, F; Nordlund, K; Bierschenk, T; Giulian, R; Ridgway, M C; Rizza, G; Kirby, N; Toulemonde, M; Kluth, P

2013-01-30

The morphology of swift heavy ion tracks in crystalline α-quartz was investigated using small angle x-ray scattering (SAXS), molecular dynamics (MD) simulations and transmission electron microscopy. Tracks were generated by irradiation with heavy ions with energies between 27 MeV and 2.2 GeV. The analysis of the SAXS data indicates a density change of the tracks of ~2 ± 1% compared to the surrounding quartz matrix for all irradiation conditions. The track radii only show a weak dependence on the electronic energy loss at values above 17 keV nm(-1), in contrast to values previously reported from Rutherford backscattering spectrometry measurements and expectations from the inelastic thermal spike model. The MD simulations are in good agreement at low energy losses, yet predict larger radii than SAXS at high ion energies. The observed discrepancies are discussed with respect to the formation of a defective halo around an amorphous track core, the existence of high stresses and/or the possible presence of a boiling phase in quartz predicted by the inelastic thermal spike model.

High Temperature Thermal Stability and Oxidation Resistance of Magnetron-sputtered Homogeneous CrAlON Coatings on 430 Steel

NASA Astrophysics Data System (ADS)

Kayani, A.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; Garratt, E.; AlFaify, S.; Gao, X.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.; Gorokhovsky, V. I.

2009-03-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800° C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, S. Sampath; Rubio, E. J.; Noor-A-Alam, M.

Ga2O3 thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 oC). The structural characteristics and optical properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films atmore » Ts=300-700 oC. The spectral transmission of the films increased with increasing temperature. The band gap of the films varied from 4.96 eV to 5.17 eV for a variation in Ts in the range 25-800 oC. A relationship between microstructure and optical property is discussed.« less

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Key concepts behind forming-free resistive switching incorporated with rectifying transport properties

PubMed Central

Shuai, Yao; Ou, Xin; Luo, Wenbo; Mücklich, Arndt; Bürger, Danilo; Zhou, Shengqiang; Wu, Chuangui; Chen, Yuanfu; Zhang, Wanli; Helm, Manfred; Mikolajick, Thomas; Schmidt, Oliver G.; Schmidt, Heidemarie

2013-01-01

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs if the deposition temperature is above 600°C. The current-voltage (I–V) curves indicate that resistive switching can only be achieved in Au/BiFeO3/Pt/Ti capacitor-like structures where this Ti diffusion occurs. The effect of Ti diffusion is confirmed by the BiFeO3 thin films deposited on Pt/sapphire and Pt/Ti/sapphire substrates. The resistive switching needs no electroforming process, and is incorporated with rectifying properties which is potentially useful to suppress the sneak current in a crossbar architecture. Those specific features open a promising alternative concept for nonvolatile memory devices as well as for other memristive devices like synapses in neuromorphic circuits. PMID:23860408

Freely-migrating-defect production during irradiation at elevated temperatures

NASA Astrophysics Data System (ADS)

Hashimoto, T.; Rehn, L. E.; Okamoto, P. R.

1988-12-01

Radiation-induced segregation in a Cu-1 at. % Au alloy was investigated using in situ Rutherford backscattering spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350 °C with four ions of substantially different masses. Relative efficiencies for producing freely migrating defects were evaluated for 1.8-MeV 1H, 4He, 20Ne, and 84Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13, and 79 keV yielded relative efficiencies of 53, 7, and 6 %, respectively, compared to the irradiation with a 0.83-keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles.

Temperature-Dependent Helium Ion-Beam Mixing in an Amorphous SiOC/Crystalline Fe Composite

DOE PAGES

Su, Qing; Price, Lloyd; Shao, Lin; ...

2016-10-31

Temperature dependent He-irradiation-induced ion-beam mixing between amorphous silicon oxycarbide (SiOC) and crystalline Fe was examined with a transmission electron microscope (TEM) and via Rutherford backscattering spectrometry (RBS). The Fe marker layer (7.2 ± 0.8 nm) was placed in between two amorphous SiOC layers (200 nm). The amount of ion-beam mixing after 298, 473, 673, 873, and 1073 K irradiation was investigated. Both TEM and RBS results showed no ion-beam mixing between Fe and SiOC after 473 and 673 K irradiation and a very trivial amount of ion-beam mixing (~2 nm) after 298 K irradiation. At irradiation temperatures higher than 873more » K, the Fe marker layer broke down and RBS could no longer be used to quantitatively examine the amount of ion mixing. The results indicate that the Fe/SiOC nanocomposite is thermally stable and tends to demix in the temperature range from 473 to 673 K. For application of this composite structure at temperatures of 873 K or higher, layer stability is a key consideration.« less

In situ measurement of low-Z material coating thickness on high Z substrate for tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mueller, D., E-mail: dmueller@pppl.gov; Roquemore, A. L.; Jaworski, M.

Rutherford backscattering of energetic particles can be used to determine the thickness of a coating of a low-Z material over a heavier substrate. Simulations indicate that 5 MeV alpha particles from an {sup 241}Am source can be used to measure the thickness of a Li coating on Mo tiles between 0.5 and 15 μm thick. Using a 0.1 mCi source, a thickness measurement can be accomplished in 2 h of counting. This technique could be used to measure any thin, low-Z material coating (up to 1 mg/cm{sup 2} thick) on a high-Z substrate, such as Be on W, B on Mo, or Limore » on Mo. By inserting a source and detector on a moveable probe, this technique could be used to provide an in situ measurement of the thickness of Li coating on NSTX-U Mo tiles. A test stand with an alpha source and an annular solid-state detector was used to investigate the measurable range of low-Z material thicknesses on Mo tiles.« less

Nanocomposite synthesis and photoluminescence properties of MeV Au-ion beam modified Ni thin films

NASA Astrophysics Data System (ADS)

Siva, Vantari; Datta, Debi P.; Singh, Avanendra; Som, T.; Sahoo, Pratap K.

2016-01-01

We report on the synthesis and properties of nano-composites from thin Ni films on Silica matrix using Au-ion beam. When 2.2 MeV Au-ions are irradiated on 5 nm Ni film on Silica, the surface morphology changes drastically with ion fluence. In fact, within a fluence range of 5 × 1014-1 × 1016 ions/cm2, a sharp increase in surface roughness follows after an initial surface smoothening. The depth profiles extracted from Rutherford backscattering spectra demonstrates the diffusion of Ni and Au into the silica matrix. The photoluminescence spectra of the irradiated samples reveal the development of two bands centered at 3.3 eV and 2.66 eV, respectively. Deconvolution of those bands shows five different emission peaks, corresponding to different luminescence centers, which confirms the existence of Ni-Au nanocomposites in silica matrix. The optical and structural modifications are understood in terms of ion induced local heating and mass transport due to thermal spikes, which leads to nanocomposite formation in silica.

Emerging surface characterization techniques for carbon steel corrosion: a critical brief review

PubMed Central

Dwivedi, D.; Becker, T.

2017-01-01

Carbon steel is a preferred construction material in many industrial and domestic applications, including oil and gas pipelines, where corrosion mitigation using film-forming corrosion inhibitor formulations is a widely accepted method. This review identifies surface analytical techniques that are considered suitable for analysis of thin films at metallic substrates, but are yet to be applied to analysis of carbon steel surfaces in corrosive media or treated with corrosion inhibitors. The reviewed methods include time of flight-secondary ion mass spectrometry, X-ray absorption spectroscopy methods, particle-induced X-ray emission, Rutherford backscatter spectroscopy, Auger electron spectroscopy, electron probe microanalysis, near-edge X-ray absorption fine structure spectroscopy, X-ray photoemission electron microscopy, low-energy electron diffraction, small-angle neutron scattering and neutron reflectometry, and conversion electron Moessbauer spectrometry. Advantages and limitations of the analytical methods in thin-film surface investigations are discussed. Technical parameters of nominated analytical methods are provided to assist in the selection of suitable methods for analysis of metallic substrates deposited with surface films. The challenges associated with the applications of the emerging analytical methods in corrosion science are also addressed. PMID:28413351

Silicide induced ion beam patterning of Si(001).

PubMed

Engler, Martin; Frost, Frank; Müller, Sven; Macko, Sven; Will, Moritz; Feder, René; Spemann, Daniel; Hübner, René; Facsko, Stefan; Michely, Thomas

2014-03-21

Low energy ion beam pattern formation on Si with simultaneous co-deposition of Ag, Pd, Pb, Ir, Fe or C impurities was investigated by in situ scanning tunneling microscopy as well as ex situ atomic force microscopy, scanning electron microscopy, transmission electron microscopy and Rutherford backscattering spectrometry. The impurities were supplied by sputter deposition. Additional insight into the mechanism of pattern formation was obtained by more controlled supply through e-beam evaporation. For the situations investigated, the ability of the impurity to react with Si, i.e. to form a silicide, appears to be a necessary, but not a sufficient condition for pattern formation. Comparing the effects of impurities with similar mass and nuclear charge, the collision kinetics is shown to be not of primary importance for pattern formation. To understand the observed phenomena, it is necessary to assume a bi-directional coupling of composition and height fluctuations. This coupling gives rise to a sensitive dependence of the final morphology on the conditions of impurity supply. Because of this history dependence, the final morphology cannot be uniquely characterized by a steady state impurity concentration.

The Narodny ion accelerator as an injector for a small cyclotron

NASA Astrophysics Data System (ADS)

Derenchuk, V.

1985-01-01

A 120 keV electrostatic accelerator is currently in use at the University of Manitoba as an ion implanter. It is proposed to use this accelerator (called the Narodny ion accelerator or NIA), upgraded to 200 keV, as an injector for a small light ion cyclotron. This "minicyclotron" will consist of 6 sectors with four dees operating at 60 kV and variable frequency. The ions will be extracted at about 50 cm radius. The types of ions to be accelerated are H -, H +, D -1, 3He 2+, 4He 2+, 6Li 3+, and 7Li 3+ with a maximum energy of about 4 MeV for the Li ions and between 2 and 3 MeV for the He ions. A beam current of close to 0.5 mA is anticipated for H + and D + ions and high energy resolution ( ΔE/ E ~ 10 -3) is expected for all ions. The marriage of these two accelerators will give a very wide range of ion implantation energies (for certain ion species) as well as a source of particles for Rutherford backscatter analysis.

High density flux of Co nanoparticles produced by a simple gas aggregation apparatus.

PubMed

Landi, G T; Romero, S A; Santos, A D

2010-03-01

Gas aggregation is a well known method used to produce clusters of different materials with good size control, reduced dispersion, and precise stoichiometry. The cost of these systems is relatively high and they are generally dedicated apparatuses. Furthermore, the usual sample production speed of these systems is not as fast as physical vapor deposition devices posing a problem when thick samples are needed. In this paper we describe the development of a multipurpose gas aggregation system constructed as an adaptation to a magnetron sputtering system. The cost of this adaptation is negligible and its installation and operation are both remarkably simple. The gas flow for flux in the range of 60-130 SCCM (SCCM denotes cubic centimeter per minute at STP) is able to completely collimate all the sputtered material, producing spherical nanoparticles. Co nanoparticles were produced and characterized using electron microscopy techniques and Rutherford back-scattering analysis. The size of the particles is around 10 nm with around 75 nm/min of deposition rate at the center of a Gaussian profile nanoparticle beam.

Synergistically-enhanced ion track formation in pre-damaged strontium titanate by energetic heavy ions

DOE PAGES

Xue, Haizhou; Zarkadoula, Eva; Sachan, Ritesh; ...

2018-03-20

Latent ion tracks created by energetic heavy ions (12 MeV Ti to 946 MeV Au) in single crystal SrTiO 3 are investigated in this paper using Rutherford backscattering spectrometry and scanning transmission electron microscopy. The results demonstrate that pre-existing irradiation damage, introduced via elastic collision processes, interacts synergistically with the electronic energy deposition from energetic heavy ions to enhance formation of latent ion tracks. The average amorphous cross-section increases with the level of pre-damage and is linearly proportional to the electronic energy loss of the ions, with a slope dependent on the pre-damage level. For the highest energy ions (629more » MeV Xe and 946 MeV Au), the tracks are continuous over the pre-damaged depth, but become discontinuous beyond the pre-damaged region. Finally, this work provides new understanding and insights on ion-solid interactions that significantly impact the interpretation of latent track formation processes, models of amorphization, and the fabrication of electro-ceramic devices.« less

Miniature Neutron-Alpha Activation Spectrometer

NASA Astrophysics Data System (ADS)

Rhodes, E.; Goldsten, J.

2001-01-01

We are developing a miniature neutron-alpha activation spectrometer for in situ analysis of samples including rocks, fines, ices, and drill cores, suitable for a lander or Rover platform, that would meet the severe mass, power, and environmental constraints of missions to the outer planets. In the neutron-activation mode, a gamma-ray spectrometer will first perform a penetrating scan of soil, ice, and loose material underfoot (depths to 10 cm or more) to identify appropriate samples. Chosen samples will be analyzed in bulk in neutron-activation mode, and then the sample surfaces will be analyzed in alpha-activation mode using Rutherford backscatter and x-ray spectrometers. The instrument will provide sample composition over a wide range of elements, including rock-forming elements (such as Na, Mg, Si, Fe, and Ca), rare earths (Sm and Eu for example), radioactive elements (K, Th, and U), and light elements present in water, ices, and biological materials (mainly H, C, O, and N). The instrument is expected to have a mass of about l kg and to require less than 1 W power. Additional information is contained in the original extended abstract.

Cadmium concentrations in the brains of Alzheimer cases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spyrou, N.M.; Stedman, J.D.

1996-12-31

There is ongoing research in relating the concentration of elements in the brain with Alzheimer`s disease. The presence of particular elements, such as aluminum and vanadium, has been considered as a possible environmental factor, creating significant interest and controversy in the field. We have been analyzing brain tissue from the MRC Alzheimer`s Disease Brain Bank, Institute of Psychiatry, from a number of cortical regions of the brain, namely, the frontal, occipital, parietal, and temporal lobes, as well as from the left and right hemispheres of the same brain whenever possible. The techniques employed have been proton-induced X-ray emission (PIXE) analysis,more » proton-induced gamma-ray emission (PIGE) analysis, Rutherford backscattering (RBS), and instrumental neutron activation analysis. Neutron irradiations were carried out at the Imperial College Consort II reactor, whereas for PIXE, PIGE, and RBS, the University of Surrey Accelerator Laboratories were used employing a Van de Graaff accelerator. In this paper, we present the cadmium results from the frontal lobe of Alzheimer cases and controls determined by PIXE analysis.« less

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

PubMed Central

Radek, Manuel; Liedke, Bartosz; Schmidt, Bernd; Voelskow, Matthias; Bischoff, Lothar; Lundsgaard Hansen, John; Nylandsted Larsen, Arne; Bougeard, Dominique; Böttger, Roman; Prucnal, Slawomir; Posselt, Matthias; Bracht, Hartmut

2017-01-01

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. PMID:28773172

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.

PubMed

Radek, Manuel; Liedke, Bartosz; Schmidt, Bernd; Voelskow, Matthias; Bischoff, Lothar; Hansen, John Lundsgaard; Larsen, Arne Nylandsted; Bougeard, Dominique; Böttger, Roman; Prucnal, Slawomir; Posselt, Matthias; Bracht, Hartmut

2017-07-17

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.

Ion beam enhanced etching of LiNbO 3

NASA Astrophysics Data System (ADS)

Schrempel, F.; Gischkat, Th.; Hartung, H.; Kley, E.-B.; Wesch, W.

2006-09-01

Single crystals of z- and x-cut LiNbO 3 were irradiated at room temperature and 15 K using He +- and Ar +-ions with energies of 40 and 350 keV and ion fluences between 5 × 10 12 and 5 × 10 16 cm -2. The damage formation investigated with Rutherford backscattering spectrometry (RBS) channeling analysis depends on the irradiation temperature as well as the ion species. For instance, He +-irradiation of z-cut material at 300 K provokes complete amorphization at 2.0 dpa (displacements per target atom). In contrast, 0.4 dpa is sufficient to amorphize the LiNbO 3 in the case of Ar +-irradiation. Irradiation at 15 K reduces the number of displacements per atom necessary for amorphization. To study the etching behavior, 400 nm thick amorphous layers were generated via multiple irradiation with He +- and Ar +-ions of different energies and fluences. Etching was performed in a 3.6% hydrofluoric (HF) solution at 40 °C. Although the etching rate of the perfect crystal is negligible, that of the amorphized regions amounts to 80 nm min -1. The influence of the ion species, the fluence, the irradiation temperature and subsequent thermal treatment on damage and etching of LiNbO 3 are discussed.

Atmospheric-Pressure Chemical Vapor Deposition of Iron Pyrite Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berry, Nicholas; Cheng, Ming; Perkins, Craig L.

2012-10-23

Iron pyrite (cubic FeS{sub 2}) is a promising candidate absorber material for earth-abundant thin-film solar cells. In this report, single-phase, large-grain, and uniform polycrystalline pyrite thin films are fabricated on glass and molybdenum-coated glass substrates by atmospheric-pressure chemical vapor deposition (AP-CVD) using the reaction of iron(III) acetylacetonate and tert-butyl disulfide in argon at 300 C, followed by sulfur annealing at 500--550 C to convert marcasite impurities to pyrite. The pyrite-marcasite phase composition depends strongly on the concentration of sodium in the growth substrate and the sulfur partial pressure during annealing. Phase and elemental composition of the films are characterized bymore » X-ray diffraction, Raman spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The in-plane electrical properties are surprisingly insensitive to phase and elemental impurities, with all films showing p-type, thermally activated transport with a small activation energy ({approx}30 meV), a room- temperature resistivity of {approx}1 {Omega} cm, and low mobility. These ubiquitous electrical properties may result from robust surface effects. These CVD pyrite thin films are well suited to fundamental electrical studies and the fabrication of pyrite photovoltaic device stacks.« less

Structural and optical properties of vanadium ion-implanted GaN

NASA Astrophysics Data System (ADS)

Macková, A.; Malinský, P.; Jagerová, A.; Sofer, Z.; Klímová, K.; Sedmidubský, D.; Mikulics, M.; Lorinčík, J.; Veselá, D.; Böttger, R.; Akhmadaliev, S.

2017-09-01

The field of advanced electronic and optical devices searches for a new generation of transistors and lasers. The practical development of these novel devices depends on the availability of materials with the appropriate magnetic and optical properties, which is strongly connected to the internal morphology and the structural properties of the prepared doped structures. In this contribution, we present the characterisation of V ion-doped GaN epitaxial layers. GaN layers, oriented along the (0 0 0 1) crystallographic direction, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates were implanted with 400 keV V+ ions at fluences of 5 × 1015 and 5 × 1016 cm-2. Elemental depth profiling was accomplished by Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS) to obtain precise information about the dopant distribution. Structural investigations are needed to understand the influence of defect distribution on the crystal-matrix recovery and the desired structural and optical properties. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy to get a comprehensive insight into the structural modification of implanted GaN and to study the influence of subsequent annealing on the crystalline matrix reconstruction. Photoluminescence measurement was carried out to check the optical properties of the prepared structures.

Validity of Vegard’s rule for Al1-xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates

NASA Astrophysics Data System (ADS)

Magalhães, S.; Franco, N.; Watson, I. M.; Martin, R. W.; O'Donnell, K. P.; Schenk, H. P. D.; Tang, F.; Sadler, T. C.; Kappers, M. J.; Oliver, R. A.; Monteiro, T.; Martin, T. L.; Bagot, P. A. J.; Moody, M. P.; Alves, E.; Lorenz, K.

2017-05-01

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1-xInxN thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard’s rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard’s rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1-xInxN films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1-xInxN/GaN bilayers.

Investigation of irradiation effects induced by self-ion in 6H-SiC combining RBS/C, Raman and XRD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaabane, Nihed; Debelle, Aurelien; Sattonnay, Gael

2012-01-01

Single crystals of 6H-SiC were irradiated at room temperature and 670 K with 4 MeV C ions at two fluences: 1015 and 1016 cm2 (0.16 and 1.6 dpa at the damage peak). Damage accumulation was studied by a combination of X-ray diffraction (XRD), Raman spectroscopy and Rutherford backscattering spectrometry in channelling geometry (RBS/C) along the [0001] direction. The irradiated layer is found to be composed of a low damage region up to 1.5 lm followed by a region where the disorder level is higher, consistent with SRIM predictions. At room temperature and low fluence, typically 1015 cm2, the strain depthmore » profile follows the dpa depth distribution (with a maximum value of 2%). The disorder is most likely due to small defect clusters. When increasing the fluence up to 1016 cm2, a buried amorphous layer forms, as indicated by e.g. Raman results where the Si C bands become broader or even disappear. At a higher irradiation temperature of 670 K, amorphization is not observed at the same fluence, revealing a dynamic annealing process. However, results tend to suggest that the irradiated layer is highly heterogeneous and composed of different types of defects.« less

RBS characterization of arsenic(III) partitioning from aqueous phase into the active layers of thin-film composite NF/RO membranes.

PubMed

Mi, Baoxia; Mariñas, Benito J; Cahill, David G

2007-05-01

The main objective of this study was to apply Rutherford backscattering spectrometry (RBS) for characterizing the partitioning of arsenic(III) from aqueous phase into the active layer of NF/RO membranes. NF/RO membranes with active layer materials including polyamide (PA), PA-polyvinyl alcohol derivative (PVA), and sulfonated-polyethersulfone (SPES) were investigated. The partition coefficient was found to be constant in the investigated As-(III) concentration range of 0.005-0.02 M at each pH investigated. The partitioning of As(III) when predominantly present as H3AsO3 (pH 3.5-8.0) was not affected by pH. In contrast, the partition coefficient of As(III) at pH 10.5, when it was predominantly present as H2AsO3-, was found to be approximately 33-49% lower than that of H3AsO3. The partition coefficients of H3AsO3 and H2AsO3- for membranes containing PA in their active layers were within the respective ranges of 6.2-8.1 and 3.6-5.4, while the corresponding values (4.8 and 3.0, respectively) for the membrane with SPES active layer were approximately 30% lower than the average values for the PA membranes.

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

NASA Astrophysics Data System (ADS)

Wang, Shuo; Li, Xiaohang; Fischer, Alec M.; Detchprohm, Theeradetch; Dupuis, Russell D.; Ponce, Fernando A.

2017-10-01

We have investigated the microstructure of BxAl1-xN films grown by flow-modulated epitaxy at 1010 °C, with B/(B + Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09. On the other hand, boron content deduced from the aluminum signal in the Rutherford backscattering spectra (RBS) ranges from x = 0.06 to 0.16, closely following the gas-flow ratios. Transmission electron microscopy indicates the sole presence of a wurtzite crystal structure in the BAlN films, and a tendency towards columnar growth for B/(B + Al) gas-flow ratios below 0.12. For higher ratios, the BAlN films exhibit a tendency towards twin formation and finer microstructure. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films. The RBS data suggest that the incorporation of B is highly efficient for our growth method, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%, for the range of B/(B + Al) gas-flow ratios that we have studied, which is significantly higher than previously thought.

On the interplay of point defects and Cd in non-polar ZnCdO films

NASA Astrophysics Data System (ADS)

Zubiaga, A.; Reurings, F.; Tuomisto, F.; Plazaola, F.; García, J. A.; Kuznetsov, A. Yu.; Egger, W.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

2013-01-01

Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 1017 cm-3 and 1018 cm-3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal.

Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

NASA Astrophysics Data System (ADS)

Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

2011-06-01

The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

Intrinsic hydrophilic nature of epitaxial thin-film of rare-earth oxide grown by pulsed laser deposition.

PubMed

Prakash, Saurav; Ghosh, Siddhartha; Patra, Abhijeet; Annamalai, Meenakshi; Motapothula, Mallikarjuna Rao; Sarkar, Soumya; Tan, Sherman J R; Zhunan, Jia; Loh, Kian Ping; Venkatesan, T

2018-02-15

Herein, we report a systematic study of water contact angle (WCA) of rare-earth oxide thin-films. These ultra-smooth and epitaxial thin-films were grown using pulsed laser deposition and then characterized using X-Ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and atomic force microscopy (AFM). Through both the traditional sessile drop and the novel f-d method, we found that the films were intrinsically hydrophilic (WCA < 10°) just after being removed from the growth chamber, but their WCAs evolved with an exposure to the atmosphere with time to reach their eventual saturation values near 90° (but always stay 'technically' hydrophilic). X-Ray photoelectron spectroscopy analysis was used to further investigate qualitatively the nature of hydrocarbon contamination on the freshly prepared as well as the environmentally exposed REO thin-film samples as a function of the exposure time after they were removed from the deposition chamber. A clear correlation between the carbon coverage of the surface and the increase in WCA was observed for all of the rare-earth films, indicating the extrinsic nature of the surface wetting properties of these films and having no relation to the electronic configuration of the rare-earth atoms as proposed by Azimi et al.

A new ion beam facility based on a 3 MV Tandetron™ at IFIN-HH, Romania

NASA Astrophysics Data System (ADS)

Burducea, I.; Straticiuc, M.; Ghiță, D. G.; Moșu, D. V.; Călinescu, C. I.; Podaru, N. C.; Mous, D. J. W.; Ursu, I.; Zamfir, N. V.

2015-09-01

A 3 MV Tandetron™ accelerator system has been installed and commissioned at the "Horia Hulubei" National Institute for Physics and Nuclear Engineering - IFIN-HH, Măgurele, Romania. The main purpose of this machine is to strengthen applied nuclear physics research ongoing in our institute for more than four decades. The accelerator system was developed by High Voltage Engineering Europa B.V. (HVE) and comprises three high energy beam lines. The first beam line is dedicated to ion beam analysis (IBA) techniques: Rutherford Backscattering Spectrometry - RBS, Nuclear Reaction Analysis - NRA, Particle Induced X-ray and γ-ray Emission - PIXE and PIGE and micro-beam experiments - μ-PIXE. The second beam line is dedicated to high energy ion implantation experiments and the third beam line was designed mainly for nuclear cross-sections measurements used in nuclear astrophysics. A unique feature, the first time in operation at an accelerator facility is the Na charge exchange canal (CEC), which is used to obtain high intensity beams of He- of at least 3 μA. The results of the acceptance tests demonstrate the huge potential of this new facility in various fields, from IBA to radiation hardness studies and from medical or environmental applications to astrophysics. The main features of the accelerator are presented in this paper.

Study of thickness dependent sputtering in gold thin films by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Dash, P.; Sahoo, P. K.; Solanki, V.; Singh, U. B.; Avasthi, D. K.; Mishra, N. C.

2015-12-01

Gold thin films of varying thickness (10-100 nm) grown on silica substrates by e-beam evaporation method were irradiated by 120 MeV Au ions at 3 × 1012 and 1 × 1013 ions cm-2 fluences. Irradiation induced modifications of these films were probed by glancing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS) and surface enhanced Raman scattering (SERS). Irradiation didn't affect the structure, the lattice parameter or the crystallite size, but modified the texturing of grains from [1 1 1] to [2 2 0]. RBS indicated thickness dependent sputtering on irradiation. The sputtering yield was found to decrease with increasing thickness. AFM indicated increase of roughness with increasing irradiation fluence for films of all thickness. In agreement with the AFM observation, the gold nanostructures on the surface of 20 nm thick film were found to increase the SERS signal of acridine orange dye attached to these structures. The SERS peaks were amplified by many fold with increasing ion fluence. The effect of 120 MeV Au ion irradiation on the grain texture, surface morphology and SERS activity in addition to the thickness dependent sputtering in gold thin films are explained by the thermal spike model of ion-matter interaction.

Erosion measurement techniques for plasma-driven railgun barrels

NASA Astrophysics Data System (ADS)

Jamison, K. A.; Niiler, Andrus

1987-04-01

Plasma-driven railguns are now in operation at several locations throughout the world. All share common problems in barrel erosion arising from the fact that the bore surface must contain a high temperature plasma armature which transmits the acceleration force to a projectile. The plasma temperature at the core of the armature is estimated to be 30 000 K or higher. Such conditions are erosive to most materials even when the exposure time is 100 μs or less. We have adapted two accelerator based techniques to aid in the study of this erosion. The first technique involves the collection and analysis of material ablated and left behind by the plasma. This analysis is based on the unfolding of the Rutherford backscattered (RBS) spectra of 1 MeV deuterons incident on residue collected from a railgun bore. The second technique is an erosion measurement involving thin layer activation (TLA) of surfaces. In this process, the copper rail surface is activated by 2.4 MeV protons creating a relatively thin (3 m) layer sparsely seeded with a long lived zinc isotope. Monitoring the decay of the activated sample before and after a firing can detect surface wear of about 0. 1 m. Results from the RBS and TLA experiments on the BRL plasma driven railgun are described.

Characterization of Defects in N-type 4H-SiC After High-Energy N Ion Implantation by RBS-Channeling and Raman Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kummari, Venkata C.; Reinert, Tilo; Jiang, Weilin

Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC(0001) to four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5×1013(0.0034), 7.8×1013(0.018), 1.5×1014(0.034), and 7.8×1014(0.18) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C) and Raman spectroscopy. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. Raman Spectroscopy was performed using a green laser of wavelength 532 nmmore » as excitation source. The normalized Raman Intensity, In shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.017, 0.034 and 0.178 respectively. In this paper, the characterizations of the defects produced due to the Nitrogen implantation in 4H-SiC are presented and the results are discussed.« less

Curie temperature, exchange integrals, and magneto-optical properties in off-stoichiometric bismuth iron garnet epitaxial films

NASA Astrophysics Data System (ADS)

Vertruyen, B.; Cloots, R.; Abell, J. S.; Jackson, T. J.; da Silva, R. C.; Popova, E.; Keller, N.

2008-09-01

We have studied the influence of the stoichiometry on the structural, magnetic, and magneto-optical properties of bismuth iron garnet (Bi3Fe5O12) thin films grown by pulsed laser deposition. Films with different stoichiometries have been obtained by varying the Bi/Fe ratio of the target and the oxygen pressure during deposition. Stoichiometry variations influence the Curie temperature TC by tuning the (Fe)-O-[Fe] geometry: TC increases when the lattice parameter decreases, contrary to what happens in the case of stoichiometric rare-earth iron garnets. The thermal variation of the magnetization, the Faraday rotation, and the Faraday ellipticity have been analyzed in the frame of the Néel two-sublattice magnetization model giving energies of -48K (4.1 meV), -29K (2.5 meV), and 84 K (7.3 meV) for the three magnetic exchange integrals jaa , jdd , and jad , respectively. Magneto-optical spectroscopy linked to compositional analysis by Rutherford backscattering spectroscopy shows that Bi and/or Fe deficiencies also affect the spectral variation (between 1.77 and 3.1 eV). Our results suggest that bismuth deficiency has an effect on the magneto-optical response of the tetrahedral Fe sublattice, whereas small iron deficiencies affect predominantly the magneto-optical response of the octahedral sublattice.

Synthesis of composite TiN/Ni3N/a-Si3N4 thin films using the plasma focus device

NASA Astrophysics Data System (ADS)

Adeel Umar, Zeshan; Ahmad, Riaz; Khan, Ijaz Ahmad; Hussain, Tousif; Hussnain, Ali; Khalid, Nida; Awais, Ali; Ali, T.

2013-12-01

Composite films of TiN/Ni3N/a-Si3N4 were synthesized using the Mather-type plasma focus device with varying numbers of focus deposition shots (5, 15, and 25) at 0° and 10° angular positions. The composition and structural analysis of these films were analyzed by using Rutherford backscattering (RBS) and X-ray diffraction (XRD). Scanning electron microscope and atomic force microscope were used to study the surface morphology of films. XRD patterns confirm the formation of composite TiN/Ni3N/a-Si3N4 films. The crystallite size of TiN (200) plane is 11 and 22 nm, respectively, at 0° and 10° angular positions for same 25 focus deposition shots. Impurity levels and thickness were measured using RBS. Scanning electron microscopy results show the formation of net-like structures for multiple focus shots (5, 15, and 25) at angular positions of 0° and 10°. The average surface roughness of the deposited films increases with increasing focus shots. The roughness of the film decreases at higher angle 10° and the films obtained are smoother as compared with the films deposited at 0° angular positions.

A comparative study of TiN and TiC: Oxidation resistance and retention of xenon at high temperature and under degraded vacuum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gavarini, S.; Bes, R.; Millard-Pinard, N.

2011-01-01

Dense TiN and TiC samples were prepared by hot pressing using micrometric powders. Xenon species (simulating rare gas fission products) were then implanted into the ceramics. The samples were annealed for 1 h at 1500 deg. C under several degraded vacuums with P{sub O{sub 2}} varying from 10{sup -6} to 2x10{sup -4} mbars. The oxidation resistance of the samples and their retention properties with respect to preimplanted xenon species were analyzed using scanning electron microscopy, grazing incidence x-ray diffraction, Rutherford backscattering spectrometry, and nuclear backscattering spectrometry. Results indicate that TiC is resistant to oxidation and does not release xenon formore » P{sub O{sub 2{<=}}}6x10{sup -6} mbars. When P{sub O{sub 2}} increases, geometric oxide crystallites appear at the surface depending on the orientation and size of TiC grains. These oxide phases are Ti{sub 2}O{sub 3}, Ti{sub 3}O{sub 5}, and TiO{sub 2}. Apparition of oxide crystallites is associated with the beginning of xenon release. TiC surface is completely covered by the oxide phases at P{sub O{sub 2}}=2x10{sup -4} mbars up to a depth of 3 {mu}m and the xenon is then completely released. For TiN samples, the results show a progressive apparition of oxide crystallites (Ti{sub 3}O{sub 5} mainly) at the surface when P{sub O{sub 2}} increases. The presence of the oxide crystallites is also directly correlated with xenon release, the more oxide crystallites are growing the more xenon is released. TiN surface is completely covered by an oxide layer at P{sub O{sub 2}}=2x10{sup -4} mbars up to 1 {mu}m. A correlation between the initial fine microstructure of TiN and the properties of the growing layer is suggested.« less

Study of Lightweight Ni-Co Alloy Mirrors Obtained by Electroforming Techniques

NASA Technical Reports Server (NTRS)

Jones, Ruth; Muntele, Iulia; Muntele, Claudiu; Zimmerman, Robert; Ila, Daryush; Smith, W. Scott (Technical Monitor)

2002-01-01

One contribution in reducing the costs of optics in space can be provided by production of ultralight mirrors. The decrease in the weight of the primary mirror of a telescope is anticipated to lead to the possibility of increasing the size of the telescopes, therefore increasing the amount and distance from which information is received. An electroplating process of ultralight replica mirrors from nickel sulfamate solution will be described. Based on an experimental setup with cylindrical symmetry, flat mirrors with a diameter of 7 inches and thickness of 1.5 mm are made from a Ni-Co alloy. The composition of the resulting deposit is analyzed using Rutherford Backscattering Spectrometry (RBS) and Proton Induced X-ray Emission (PIXE). In order to resolve Ni and Co, 10 MeV nitrogen ions are used as projectiles in the RBS measurements. Solution parameters monitored during the deposition process using optical absorption and polarography will be correlated with the final concentration of Ni and Co in the deposit. Bath parameters like temperature, current density, agitation level and acidity are chosen at certain values and maintained constant from one sample to another throughout the deposition process. The purpose of the experiment is to obtain mirrors with near zero stress, and predetermined composition and hardness. This study is an intermediate step in obtaining through the same process, but with a larger scale setup, ultralight large aperture replica mirrors.

Direct Observation of Defect Range and Evolution in Ion-Irradiated Single Crystalline Ni and Ni Binary Alloys

DOE PAGES

Lu, Chenyang; Jin, Ke; Béland, Laurent K.; ...

2016-02-01

We report that energetic ions have been widely used to evaluate the irradiation tolerance of structural materials for nuclear power applications and to modify material properties. It is important to understand the defect production, annihilation and migration mechanisms during and after collision cascades. In this study, single crystalline pure nickel metal and single-phase concentrated solid solution alloys of 50%Ni50%Co (NiCo) and 50%Ni50%Fe (NiFe) without apparent preexisting defect sinks were employed to study defect dynamics under ion irradiation. Both cross-sectional transmission electron microscopy characterization (TEM) and Rutherford backscattering spectrometry channeling (RBS-C) spectra show that the range of radiation-induced defect clusters farmore » exceed the theoretically predicted depth in all materials after high-dose irradiation. Defects in nickel migrate faster than in NiCo and NiFe. Both vacancy-type stacking fault tetrahedra (SFT) and interstitial loops coexist in the same region, which is consistent with molecular dynamics simulations. Kinetic activation relaxation technique (k-ART) simulations for nickel showed that small vacancy clusters, such as di-vacancies and tri-vacancies, created by collision cascades are highly mobile, even at room temperature. The slower migration of defects in the alloy along with more localized energy dissipation of the displacement cascade may lead to enhanced radiation tolerance.« less

Effect of crystallographic orientation on structural and mechanical behaviors of Ni-Ti thin films irradiated by Ag7+ ions

NASA Astrophysics Data System (ADS)

Kumar, Veeresh; Singhal, Rahul

2018-04-01

In the present study, thin films of Ni-Ti shape memory alloy have been grown on Si substrate by dc magnetron co-sputtering technique using separate sputter targets Ni and Ti. The prepared thin films have been irradiated by 100 MeV Ag7+ ions at three different fluences, which are 1 × 1012, 5 × 1012, and 1 × 1013 ions/cm2. The elemental composition and depth profile of pristine film have been investigated by Rutherford backscattering spectrometry. The changes in crystal orientation, surface morphology, and mechanical properties of Ni-Ti thin films before and after irradiation have been studied by X-ray diffraction, atomic force microscopy, field-emission scanning electron microscopy, and nanoindentation techniques, respectively. X-ray diffraction measurement has revealed the existence of both austenite and martensite phases in pristine film and the formation of precipitate on the surface of the film after irradiation at an optimized fluence of 1 × 1013 ions/cm2. Nanoindentation measurement has revealed improvement in mechanical properties of Ni-Ti thin films after ion irradiation via increasing hardness and Young modulus due to the formation of precipitate and ductile phase. The improvement in mechanical behavior could be explained in terms of precipitation hardening and structural change of Ni-Ti thin film after irradiation by Swift heavy ion irradiation.

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliviero, E.; David, M. L.; Beaufort, M. F.

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 Degree-Sign C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 Degree-Sign C annealing, complete recrystallization takes placemore » and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {l_brace}311{r_brace} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.« less

Au-C allotrope nano-composite films at extreme conditions generated by intense ultra-short laser

NASA Astrophysics Data System (ADS)

Khan, Saif A.; Saravanan, K.; Tayyab, M.; Bagchi, S.; Avasthi, D. K.

2016-07-01

Structural evolution of gold-carbon allotrope nano-composite films under relativistically intense, ultra-short laser pulse irradiation is studied in this work. Au-C nano-composite films, having 4 and 10 at.% of Au, were deposited by co-sputtering technique on silicon substrates. Au-C60 NC films with 2.5 at.% Au were deposited on 12 μm thick Al foil using co-evaporation technique. These samples were radiated with single pulse from 45 fs, 10 TW Ti:Sapphire Laser at RRCAT at an intensity of 3 × 1018 W cm-2. The morphological and compositional changes were investigated using scanning electron microscopy (SEM) and Rutherford back-scattering spectrometry (RBS) techniques. Laser pulse created three morphologically distinct zones around the point of impact on samples with silicon substrates. The gold content in 600 μm circular region around a point of impact is found to reduce by a factor of five. Annular rings of ∼70 nm in diameter were observed in case of Au-C NC film after irradiation. Laser pulse created a hole of about 400 μm in the sample with Al foil as substrate and wavy structures of 6 μm wavelength are found to be created around this hole. The study shows radial variation in nano-structure formation with varying local intensity of laser pulse.

Bulk chlorine uptake by polyamide active layers of thin-film composite membranes upon exposure to free chlorine-kinetics, mechanisms, and modeling.

PubMed

Powell, Joshua; Luh, Jeanne; Coronell, Orlando

2014-01-01

We studied the volume-averaged chlorine (Cl) uptake into the bulk region of the aromatic polyamide active layer of a reverse osmosis membrane upon exposure to free chlorine. Volume-averaged measurements were obtained using Rutherford backscattering spectrometry with samples prepared at a range of free chlorine concentrations, exposure times, and mixing, rinsing, and pH conditions. Our volume-averaged measurements complement previous studies that have quantified Cl uptake at the active layer surface (top ≈ 7 nm) and advance the mechanistic understanding of Cl uptake by aromatic polyamide active layers. Our results show that surface Cl uptake is representative of and underestimates volume-averaged Cl uptake under acidic conditions and alkaline conditions, respectively. Our results also support that (i) under acidic conditions, N-chlorination followed by Orton rearrangement is the dominant Cl uptake mechanism with N-chlorination as the rate-limiting step; (ii) under alkaline conditions, N-chlorination and dechlorination of N-chlorinated amide links by hydroxyl ion are the two dominant processes; and (iii) under neutral pH conditions, the rates of N-chlorination and Orton rearrangement are comparable. We propose a kinetic model that satisfactorily describes Cl uptake under acidic and alkaline conditions, with the largest discrepancies between model and experiment occurring under alkaline conditions at relatively high chlorine exposures.

{sup 26}Al production: The Allende meteorite (Chihuahua) stellar nucleosynthesis and solar models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Araujo-Escalona, V.; Andrade, E.; Barrón-Palos, L.

2015-07-23

In 1969 a meteorite fell near the small town of Allende, state of Chihuahua in the north of Mexico. Its study yielded information that changed the current understanding of the solar model. In particular traces of {sup 26}Al were found. Abundances of that isotope had been seen in the universe and were related to regions of active heavy nucleosynthesis. Its presence on the solar system was unexpected. It is now understood that cosmic rays induce nuclear reactions on materials to produce {sup 26}Al, on Earth this is well known and it is the basis of many environmental studies, so itmore » is not only the product of some high metalicity star collapse. Taking advantage of the recently reinforced laboratory infrastructure of the Instituto de Física, at UNAM in Mexico City, we proposed to measure the cross section for {sup 26}Al production via some of the most likely reactions, from the nuclear physics point of view (highest Q-values). In this paper the study of the {sup 28}Si(d,α){sup 26} Al nuclear reaction is shown. A target is prepared by a mixture of silicon and aluminum powders. It is irradiated with a deuteron beam (≈1 µA current) at the MV CN-Van de Graaff accelerator laboratory. The number of projectiles is deduced by Rutherford Backscattering Spectrometry (RBS). The produced {sup 26}Al nuclei are then counted at the Accelerator Mass Spectrometry Laboratory.« less

A brief history of Lord Rutherford's radium

PubMed Central

Todd, Neil

2014-01-01

In this paper I give a brief summary of what is known about the acquisition, use and fate of the radium sources that were in the possession of Lord Rutherford during his lifetime. The account is written in two parts, corresponding to the periods from the discovery of radium in 1898 until his death in 1937 and then from 1937 until recent times. The history of Rutherford's radium closely shadows the history of radioactivity, the evolution of nuclear physics, the race for the bomb, and the development of the nuclear industry. PMID:25254280

Superficial femoral artery TASC D Registry: twelve-month effectiveness analysis of the Pulsar-18 SE nitinol stent in patients with critical limb ischemia.

PubMed

Lichtenberg, M; Stahlhoff, W; Boese, D

2013-08-01

Single center observational study analyzing the primary patency rate and freedom from target lesions revascularization rate of the Pulsar-18 nitinol stent after recanalization of long superficial femoral artery (SFA) occlusions (TASC D) in 22 patients with critical limb ischemia (CLI). Between 1/2011 and 7/2011, 22 consecutive patients (9 male, 13 female) with chronic total occlusions (CTO) of the femoro-popliteal arteries presenting with CLI (17 patients with Rutherford 4 score, and 5 patients with Rutherford 5 score) were enrolled and successfully recanalized using the Pulsar-18 self-expanding (SE) nitinol stent (BIOTRONIK AG, Buelach, Switzerland). Primary patency at 12 months was defined as no binary restenosis (>50%) on Duplex ultrasound (PSVR<2.5) and respectively no target lesion revascularization performed within 12 months. The average lesion length of the treated femoro-popliteal segment was 315 mm. Performing spot stenting average stent length in all patients was 245 mm (minimal 215 mm, maximal 315 mm). Technical success, with establishing an antegrade straight line flow to the foot through a reopened SFA, was achieved in all 22 patients. Subintimal and intraluminal recanalization techniques were used. Two patients with Rutherford 5 score had a minor amputation shortly after the recanalization procedure. All other patients had a complete wound healing of their lesions during a 6 month follow-up. After 12 month follow-up the primary patency rate of the Pulsar-18 SE nitinol stent was 77% with a per protocol restenosis in 5 of 22 patients. Seventeen patients showed a walking capacity on treadmill test >300 meters (Rutherford II). Two patients with a documented restenosis were Rutherford, these patients were treated conservatively. Three patients with restenosis and a Rutherford III score were scheduled for an endovascular target lesion revascularization leading to a freedom from target lesion revascularization rate of 86%. Endovascular intervention of long SFA occlusions using subintimal or intraluminal recanalization technique with implantation of the Pulsar-18 SE nitinol stent in CLI patients is safe and clinically effective with a primary patency rate after 12 months of 77% and a freedom from target lesion revascularization rate of 86%.

Single cell elemental analysis using nuclear microscopy

NASA Astrophysics Data System (ADS)

Ren, M. Q.; Thong, P. S. P.; Kara, U.; Watt, F.

1999-04-01

The use of Particle Induced X-ray Emission (PIXE), Rutherford Backscattering Spectrometry (RBS) and Scanning Transmission Ion Microscopy (STIM) to provide quantitative elemental analysis of single cells is an area which has high potential, particularly when the trace elements such as Ca, Fe, Zn and Cu can be monitored. We describe the methodology of sample preparation for two cell types, the procedures of cell imaging using STIM, and the quantitative elemental analysis of single cells using RBS and PIXE. Recent work on single cells at the Nuclear Microscopy Research Centre,National University of Singapore has centred around two research areas: (a) Apoptosis (programmed cell death), which has been recently implicated in a wide range of pathological conditions such as cancer, Parkinson's disease etc, and (b) Malaria (infection of red blood cells by the malaria parasite). Firstly we present results on the elemental analysis of human Chang liver cells (ATTCC CCL 13) where vanadium ions were used to trigger apoptosis, and demonstrate that nuclear microscopy has the capability of monitoring vanadium loading within individual cells. Secondly we present the results of elemental changes taking place in individual mouse red blood cells which have been infected with the malaria parasite and treated with the anti-malaria drug Qinghaosu (QHS).

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

NASA Astrophysics Data System (ADS)

Schifano, R.; Riise, H. N.; Domagala, J. Z.; Azarov, A. Yu.; Ratajczak, R.; Monakhov, E. V.; Venkatachalapathy, V.; Vines, L.; Chan, K. S.; Wong-Leung, J.; Svensson, B. G.

2017-01-01

Homoepitaxial ZnO growth is demonstrated from conventional RF-sputtering at 400 °C on both Zn and O polar faces of hydrothermally grown ZnO substrates. A minimum yield for the Rutherford backscattering and channeling spectrum, χmin, equal to ˜3% and ˜12% and a full width at half maximum of the 00.2 diffraction peak rocking curve of (70 ± 10) arc sec and (1400 ± 100) arc sec have been found for samples grown on the Zn and O face, respectively. The structural characteristics of the film deposited on the Zn face are comparable with those of epilayers grown by more complex techniques like molecular beam epitaxy. In contrast, the film simultaneously deposited on the O-face exhibits an inferior crystalline structure ˜0.7% strained in the c-direction and a higher atomic number contrast compared with the substrate, as revealed by high angle annular dark field imaging measurements. These differences between the Zn- and O-face films are discussed in detail and associated with the different growth mechanisms prevailing on the two surfaces.

Thermoelectric properties of Zn4Sb3/CeFe(4-x)CoxSb12 nano-layered superlattices modified by MeV Si ion beam

NASA Astrophysics Data System (ADS)

Budak, S.; Guner, S.; Minamisawa, R. A.; Muntele, C. I.; Ila, D.

2014-08-01

We prepared multilayers of superlattice thin film system with 50 periodic alternating nano-layers of semiconducting half-Heusler β-Zn4Sb3 and skutterudite CeFe2Co2Sb12 compound thin films using ion beam assisted deposition (IBAD) with Au layers deposited on both sides as metal contacts. The deposited multilayer thin films have alternating layers about 5 nm thick. The total thickness of the multilayer system is 275 nm. The superlattices were then bombarded by 5 MeV Si ion at six different fluences to form nano-cluster structures. The film thicknesses and composition were monitored by Rutherford backscattering spectrometry (RBS) before and after MeV ion bombardment. We have measured the thermoelectric efficiency, Figure of Merit ZT, of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3ω) method, the cross plane Seebeck coefficient, and the electrical conductivity using the van der Pauw method before and after the MeV ion bombardments. We reached the remarkable thermoelectric Figure of Merit results at optimal fluences.

Electrical and physical characterizations of the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1})

NASA Astrophysics Data System (ADS)

Shiomi, Hiromu; Kitai, Hidenori; Tsujimura, Masatoshi; Kiuchi, Yuji; Nakata, Daisuke; Ono, Shuichi; Kojima, Kazutoshi; Fukuda, Kenji; Sakamoto, Kunihiro; Yamasaki, Kimiyohi; Okumura, Hajime

2016-04-01

The effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}) were investigated using both electrical and physical characterization methods. Hall measurements and split capacitance-voltage (C-V) measurements revealed that the difference in field-effect mobility between wet oxide and dry oxynitride interfaces was mainly attributed to the ratio of the mobile electron density to the total induced electron density. The surface states close to the conduction band edge causing a significant trapping of inversion carriers were also evaluated. High-resolution Rutherford backscattering spectroscopy (HR-RBS) analysis and high-resolution elastic recoil detection analysis (HR-ERDA) were employed to show the nanometer-scale compositional profile of the SiC-MOS interfaces for the first time. These analyses, together with cathode luminescence (CL) spectroscopy and transmission electron microscopy (TEM), suggested that the deviations of stoichiometry and roughness at the interface defined the effects of oxynitridation and wet oxidation at the interface of SiO2/4H-SiC(0001) and (000\\bar{1}).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Haizhou; Zhang, Yanwen; Zhu, Zihua

Single crystalline 6H-SiC samples were irradiated at 150 K using 2MeV Pt ions. Local volume swelling is determined by electron energy loss spectroscopy (EELS), a nearly sigmoidal dependence with irradiation dose is observed. The disorder profiles and ion distribution are determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy and secondary ion mass spectrum. Since the volume swelling reaches 12% over the damage region under high ion fluence, lattice expansion is considered and corrected during the data analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter).more » Comparing with the measured profiles, SRIM code significantly overestimates the electronic stopping power for the slow heavy Pt ions, and large derivations are observed in the predicted ion distribution and the damage profiles. Utilizing the reciprocity method that is based on the invariance of the inelastic excitation in ion atom collisions against interchange of projectile and target, much lower electronic stopping is deduced. A simple approach based on reducing the density of SiC target in SRIM simulation is proposed to compensate the overestimated SRIM electronic stopping power values. Better damage profile and ion range are predicted.« less

In-situ real time measurements of net erosion rates of copper during hydrogen plasma exposure

NASA Astrophysics Data System (ADS)

Kesler, Leigh; Wright, Graham; Peterson, Ethan; Whyte, Dennis

2013-10-01

In order to properly understand the dynamics of net erosion/deposition in fusion reactors, such as tokamaks, a diagnostic measuring the real time rates of net erosion/deposition during plasma exposure is necessary. The DIONISOS experiment produces real time measurements of net erosion/deposition by using Rutherford backscattering spectroscopy (RBS) ion beam analysis simultaneously with plasma exposure from a helicon plasma source. This in-situ method improves on ex-situ weight loss measurements by allowing measurement of possible synergistic effects of high ion implantation rates and net erosion rate and by giving a real time response to changes in plasma parameters. Previous work has validated this new technique for measuring copper (Cu) erosion from helium (He) plasma ion bombardment. This technique is now extended to measure copper erosion due to deuterium and hydrogen plasma ion exposure. Targets used were a 1.5 μm Cu layer on an aluminum substrate. Cu layer thickness is tracked in real time using 1.2 MeV proton RBS. Measured erosion rates will be compared to results from literature and He erosion rates. Supported by US DoE award DE-SC00-02060.

The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Tao; Wen, Huanming; Wu, Ruihong; An, Shengbiao; Zhang, Xiuqing; Wang, Xiaoliang

2008-11-01

AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.

2014-12-15

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mnmore » is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.« less

Ion-beam-induced damage formation in CdTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rischau, C. W.; Schnohr, C. S.; Wendler, E.

2011-06-01

Damage formation in <111>- and <112>-oriented CdTe single crystals irradiated at room temperature and 15 K with 270 keV Ar or 730 keV Sb ions was investigated in situ using Rutherford backscattering spectroscopy (RBS) in channeling configuration. Defect profiles were calculated from the RBS spectra using the computer code DICADA and additional energy-dependent RBS measurements were performed to identify the type of defects. At both temperatures no formation of a buried amorphous layer was detected even after prolonged irradiation with several 10{sup 16} ions/cm{sup 2}. The fact that CdTe is not rendered amorphous even at 15 K suggests that themore » high resistance to amorphization is caused by the high ionicity of CdTe rather than thermal effects. The calculated defect profiles show the formation of a broad defect distribution that extends much deeper into the crystal than the projected range of the implanted ions at both temperatures. The post-range defects in CdTe thus do not seem to be of thermal origin either, but are instead believed to result from migration driven by the electronic energy loss.« less

Microstructural response of InGaN to swift heavy ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ~275 nm in thickness grown on a GaN/Al 2O 3 substrate was irradiated with 290 MeV 238U 32+ ions to a fluence of 1.2 x 12 cm -2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution x-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In 0.18Ga 0.82N film and the 3.0 µm thick GaN buffer layer. The mean diameter of the tracks in In 0.18Ga 0.82N is ~9 nm, as determined by HIM examination. Combinationmore » of the HIM and RBS/C data suggests that the material in the track is likely to be highly disordered or fully amorphized, in contrast to a crystalline structure within the ion track in GaN. Lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0002) planes in GaN with lattice expansion are observed after irradiation.« less

Structural characterization of ultrathin Cr-doped ITO layers deposited by double-target pulsed laser ablation

NASA Astrophysics Data System (ADS)

Cesaria, Maura; Caricato, Anna Paola; Leggieri, Gilberto; Luches, Armando; Martino, Maurizio; Maruccio, Giuseppe; Catalano, Massimo; Grazia Manera, Maria; Rella, Roberto; Taurino, Antonietta

2011-09-01

In this paper we report on the growth and structural characterization of very thin (20 nm) Cr-doped ITO films, deposited at room temperature by double-target pulsed laser ablation on amorphous silica substrates. The role of Cr atoms in the ITO matrix is carefully investigated with increasing doping content by transmission electron microscopy (TEM). Selected-area electron diffraction, conventional bright field and dark field as well as high-resolution TEM analyses, and energy dispersive x-ray spectroscopy demonstrate that (i) crystallization features occur despite the low growth temperature and small thickness, (ii) no chromium or chromium oxide secondary phases are detectable, regardless of the film doping levels, (iii) the films crystallize as crystalline flakes forming large-angle grain boundaries; (iv) the observed flakes consist of crystalline planes with local bending of the crystal lattice. Thickness and compositional information about the films are obtained by Rutherford back-scattering spectrometry. Results are discussed by considering the combined effects of growth temperature, smaller ionic radius of the Cr cation compared with the trivalent In ion, doping level, film thickness, the double-target doping technique and peculiarities of the pulsed laser deposition method.

Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures.

PubMed

Urso, M; Pellegrino, G; Strano, V; Bruno, E; Priolo, F; Mirabella, S

2018-04-20

Ni-based nanostructures are attractive catalytic materials for many electrochemical applications, among which are non-enzymatic sensing, charge storage, and water splitting. In this work, we clarify the synthesis kinetics of Ni(OH) 2 /NiOOH nanowalls grown by chemical bath deposition at room temperature and at 50 °C. We applied the results to non-enzymatic glucose sensing, reaching a highest sensitivity of 31 mA cm -2 mM -1 . Using scanning electron microscopy, x-ray diffraction analysis and Rutherford backscattering spectrometry we found that the growth occurs through two regimes: first, a quick random growth leading to disordered sheets of Ni oxy-hydroxide, followed by a slower growth of well-aligned sheets of Ni hydroxide. A high growth temperature (50 °C), leading mainly to well-aligned sheets, offers superior electrochemical properties in terms of charge storage, charge carrier transport and catalytic action, as confirmed by cyclic voltammetry and electrochemical impedance spectroscopy analyses. The reported results on the optimization and application of low-cost synthesis of these Ni-based nanostructures have a large potential for application in catalysis, (bio)sensing, and supercapacitors areas.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of themore » III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.« less

Development of ΔE-E telescope ERDA with 40 MeV 35Cl7+ beam at MALT in the University of Tokyo optimized for analysis of metal oxynitride thin films

NASA Astrophysics Data System (ADS)

Harayama, I.; Nagashima, K.; Hirose, Y.; Matsuzaki, H.; Sekiba, D.

2016-10-01

We have developed a compact ΔE-E telescope elastic recoil detection analysis (ERDA) system, for the first time at Micro Analysis Laboratory, Tandem Accelerator (MALT) in the University of Tokyo, which consists of a gas ionization chamber and solid state detector (SSD) for the quantitative analysis of light elements. The gas ionization chamber is designed to identify the recoils of O and N from metal oxynitrides thin films irradiated with 40 MeV 35Cl7+. The length of the electrodes along the beam direction is 50 mm optimized to sufficiently separate energy loss of O and N recoils in P10 gas at 6.0 × 103 Pa. The performance of the gas ionization chamber was examined by comparing the ERDA results on the SrTaO2N thin films with semi-empirical simulation and the chemical compositions previously determined by nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry (RBS). We also confirmed availability of the gas ionization chamber for identifying not only the recoils of O and N but also those of lithium, carbon and fluorine.

Processing of La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering

NASA Astrophysics Data System (ADS)

Madakson, P.; Cuomo, J. J.; Yee, D. S.; Roy, R. A.; Scilla, G.

1988-03-01

High-quality La(1.8)Sr(0.2)CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 micron thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-(9 pct)Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, TEM, X-ray diffraction, and SIMS. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film.

Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature.

PubMed

Lee, Hyung-Ik; Park, Jong-Bong; Xianyu, Wenxu; Kim, Kihong; Chung, Jae Gwan; Kyoung, Yong Koo; Byun, Sunjung; Yang, Woo Young; Park, Yong Young; Kim, Seong Min; Cho, Eunae; Shin, Jai Kwang

2017-10-26

We report on the degradation process by water vapor of hydrogenated amorphous silicon oxynitride (SiON:H) films deposited by plasma-enhanced chemical vapor deposition at low temperature. The stability of the films was investigated as a function of the oxygen content and deposition temperature. Degradation by defects such as pinholes was not observed with transmission electron microscopy. However, we observed that SiON:H film degrades by reacting with water vapor through only interstitial paths and nano-defects. To monitor the degradation process, the atomic composition, mass density, and fully oxidized thickness were measured by using high-resolution Rutherford backscattering spectroscopy and X-ray reflectometry. The film rapidly degraded above an oxygen composition of ~27 at%, below a deposition temperature of ~150 °C, and below an mass density of ~2.15 g/cm 3 . This trend can be explained by the extents of porosity and percolation channel based on the ring model of the network structure. In the case of a high oxygen composition or low temperature, the SiON:H film becomes more porous because the film consists of network channels of rings with a low energy barrier.

Ultrathin NiGe films prepared via catalytic solid-vapor reaction of Ni with GeH(4).

PubMed

Peter, Antony P; Opsomer, Karl; Adelmann, Christoph; Schaekers, Marc; Meersschaut, Johan; Richard, Olivier; Vaesen, Inge; Moussa, Alain; Franquet, Alexis; Zsolt, Tokei; Van Elshocht, Sven

2013-10-09

A low-temperature (225-300 °C) solid-vapor reaction process is reported for the synthesis of ultrathin NiGe films (∼6-23 nm) on 300 mm Si wafers covered with thermal oxide. The films were prepared via catalytic chemical vapor reaction of germane (GeH4) gas with physical vapor deposited (PVD) Ni films of different thickness (2-10 nm). The process optimization by investigating GeH4 partial pressure, reaction temperature, and time shows that low resistive, stoichiometric, and phase pure NiGe films can be formed within a broad window. NiGe films crystallized in an orthorhombic structure and were found to exhibit a smooth morphology with homogeneous composition as evidenced by glancing angle X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back-scattering (RBS) analysis. Transmission electron microscopy (TEM) analysis shows that the NiGe layers exhibit a good adhesion without voids and a sharp interface on the thermal oxide. The NiGe films were found to be morphologically and structurally stable up to 500 °C and exhibit a resistivity value of 29 μΩ cm for 10 nm NiGe films.

Scanning transmission ion microscopy mass measurements for quantitative trace element analysis within biological samples and validation using atomic force microscopy thickness measurements

NASA Astrophysics Data System (ADS)

Devès, Guillaume; Cohen-Bouhacina, Touria; Ortega, Richard

2004-10-01

We used the nuclear microprobe techniques, micro-PIXE (particle-induced X-ray emission), micro-RBS (Rutherford backscattering spectrometry) and scanning transmission ion microscopy (STIM) in order to perform the characterization of trace element content and spatial distribution within biological samples (dehydrated cultured cells, tissues). The normalization of PIXE results was usually expressed in terms of sample dry mass as determined by micro-RBS recorded simultaneously to micro-PIXE. However, the main limit of RBS mass measurement is the sample mass loss occurring during irradiation and which could be up to 30% of the initial sample mass. We present here a new methodology for PIXE normalization and quantitative analysis of trace element within biological samples based on dry mass measurement performed by mean of STIM. The validation of STIM cell mass measurements was obtained in comparison with AFM sample thickness measurements. Results indicated the reliability of STIM mass measurement performed on biological samples and suggested that STIM should be performed for PIXE normalization. Further information deriving from direct confrontation of AFM and STIM analysis could as well be obtained, like in situ measurements of cell specific gravity within cells compartment (nucleolus and cytoplasm).

Microstructural response of InGaN to swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Zhang, L. M.; Jiang, W.; Fadanelli, R. C.; Ai, W. S.; Peng, J. X.; Wang, T. S.; Zhang, C. H.

2016-12-01

A monocrystalline In0.18Ga0.82N film of ∼275 nm in thickness grown on a GaN/Al2O3 substrate was irradiated with 290 MeV 238U32+ ions to a fluence of 1.2 × 1012 cm-2 at room temperature. The irradiated sample was characterized using helium ion microscopy (HIM), Rutherford backscattering spectrometry under ion-channeling conditions (RBS/C), and high-resolution X-ray diffraction (HRXRD). The irradiation leads to formation of ion tracks throughout the thin In0.18Ga0.82N film and the 3.0 μm thick GaN buffer layer. The mean diameter of the tracks in In0.18Ga0.82N is ∼9 nm, as determined by HIM examination. Combination of the HIM and RBS/C data suggests that the In0.18Ga0.82N material in the track is likely to be highly disordered or fully amorphized. The irradiation induced lattice relaxation in In0.18Ga0.82N and a distribution of d-spacing of the (0 0 0 2) planes in GaN with lattice expansion are observed by HRXRD.

First-time observation of Mastro Giorgio masterpieces by means of non-destructive techniques

NASA Astrophysics Data System (ADS)

Padeletti, G.; Ingo, G. M.; Bouquillon, A.; Pages-Camagna, S.; Aucouturier, M.; Roehrs, S.; Fermo, P.

2006-06-01

For the first time some excellent pieces belonging to the majolica production of the great master Giorgio Andreoli from Gubbio (Central Italy) have been characterized from a chemical and structural point of view with the aim to identify the composition of both pigments and lustres. A series of particle-induced X-ray emission (PIXE), Rutherford backscattering spectrometry (RBS) and Raman analyses have been performed on some plates coming from Museo del Palazzo dei Consoli (Gubbio) and several French museums (Louvre, Musée National de la Céramique, Musée National de la Renaissance) lustred by Giorgio Andreoli and decorated by famous majolica painters such as Francesco Xanto Avelli. The three techniques are complementary and useful in the investigation of art objects since they are non-destructive. Furthermore, the low detection limits allow the identification of all elements and compounds present, and RBS allows concentration profiling, too. It is worth noticing that the examined objects are characterized by the presence of both gold and ruby-red lustres, a peculiarity of Mastro Giorgio’s technique. The measurements by PIXE and RBS have been carried out on the AGLAE accelerator at C2RMF, Louvre Palace.

High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

NASA Astrophysics Data System (ADS)

Garratt, E.; Wickey, K. J.; Nandasiri, M. I.; Moore, A.; AlFaify, S.; Gao, X.; Kayani, A.; Smith, R. J.; Buchanan, T. L.; Priyantha, W.; Kopczyk, M.; Gannon, P. E.

2009-11-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 oC. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

NASA Astrophysics Data System (ADS)

Dey, Sandwip K.; Goswami, Jaydeb; Gu, Diefeng; de Waard, Henk; Marcus, Steve; Werkhoven, Chris

2004-03-01

Ruthenium electrodes were selectively deposited on photoresist-patterned HfO2 surface [deposited on a SiOx/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280-320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ˜20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuOx at the Ru grain boundaries and at the DCVD-Ru/ALD-HfO2 interface. The estimated work function of DCVD-Ru on ALD-HfO2 was ˜5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance-voltage, and leakage current density at -2 V of the HfO2/SiOx dielectric, after forming gas (95% N2+5% H2) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10-7 A cm-2, respectively.

Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces

NASA Astrophysics Data System (ADS)

Mathew, S.; Satpati, B.; Joseph, B.; Dev, B. N.

2005-08-01

We have deposited Ag on hydrogen passivated Si(1 0 0) surfaces under high vacuum conditions at room temperature. The deposition, followed by annealing at 250 °C for 30 min, produced silver islands of an average lateral size 36±14 nm. Depositing a small amount of Pb prior to Ag deposition reduced the average island size to 14±5 nm. A small amount of Pb, initially present at the Ag-Si interface, is found to be segregating to the surface of Ag after annealing. Both these aspects, namely, reduction of the island size and Pb floating on the Ag surface conform to the surfactant action of Pb. Samples have been characterized by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). A selective etching process that preferentially removes Pb, in conjunction with RBS, was used to detect surface segregation of Pb involving depth scales below the resolution of conventional RBS. The annealing and etching process leaves only smaller Ag islands on the surface with complete removal of Pb. Ag growth in the presence of Pb leads to smaller Ag islands with a narrower size distribution.

Enhanced sensitivity in non-enzymatic glucose detection by improved growth kinetics of Ni-based nanostructures

NASA Astrophysics Data System (ADS)

Urso, M.; Pellegrino, G.; Strano, V.; Bruno, E.; Priolo, F.; Mirabella, S.

2018-04-01

Ni-based nanostructures are attractive catalytic materials for many electrochemical applications, among which are non-enzymatic sensing, charge storage, and water splitting. In this work, we clarify the synthesis kinetics of Ni(OH)2/NiOOH nanowalls grown by chemical bath deposition at room temperature and at 50 °C. We applied the results to non-enzymatic glucose sensing, reaching a highest sensitivity of 31 mA cm-2mM-1. Using scanning electron microscopy, x-ray diffraction analysis and Rutherford backscattering spectrometry we found that the growth occurs through two regimes: first, a quick random growth leading to disordered sheets of Ni oxy-hydroxide, followed by a slower growth of well-aligned sheets of Ni hydroxide. A high growth temperature (50 °C), leading mainly to well-aligned sheets, offers superior electrochemical properties in terms of charge storage, charge carrier transport and catalytic action, as confirmed by cyclic voltammetry and electrochemical impedance spectroscopy analyses. The reported results on the optimization and application of low-cost synthesis of these Ni-based nanostructures have a large potential for application in catalysis, (bio)sensing, and supercapacitors areas.

Innovative combination of spectroscopic techniques to reveal nanoparticle fate in a crop plant

NASA Astrophysics Data System (ADS)

Larue, Camille; Castillo-Michel, Hiram; Stein, Ricardo J.; Fayard, Barbara; Pouyet, Emeline; Villanova, Julie; Magnin, Valérie; Pradas del Real, Ana-Elena; Trcera, Nicolas; Legros, Samuel; Sorieul, Stéphanie; Sarret, Géraldine

2016-05-01

Nanotechnology is the new industrial revolution of our century. Its development leads to an increasing use of nanoparticles and thus to their dissemination. Their fate in the environment is of great concern and especially their possible transfer in trophic chains might be an issue for food safety. However, so far our knowledge on this topic has been restricted by the lack of appropriate techniques to characterize their behavior in complex matrices. Here, we present in detail the use of cutting-edge beam-based techniques for nanoparticle in situ localization, quantification and speciation in a crop plant species (Lactuca sativa). Lettuce seedlings have been exposed to TiO2 and Ag nanoparticles and analyzed by inductively coupled plasma spectrometry, micro-particle induced X-ray emission coupled to Rutherford backscattering spectroscopy on nuclear microprobe, micro-X-ray fluorescence spectroscopy and X-ray absorption near edge structure spectroscopy. The benefits and drawbacks of each technique are discussed, and the types of information that can be drawn, for example on the translocation to edible parts, change of speciation within the plant, detoxification mechanisms, or impact on the plant ionome, are highlighted. Such type of coupled approach would be an asset for nanoparticle risk assessment.

Irradiation-induced damage evolution in concentrated Ni-based alloys

DOE PAGES

Velisa, Gihan; Ullah, Mohammad Wali; Xue, Haizhou; ...

2017-06-06

Understanding the effects of chemical complexity from the number, type and concentration of alloying elements in single-phase concentred solid-solution alloys (SP-CSAs) on defect dynamics and microstructure evolution is pivotal for developing next-generation radiation-tolerant structural alloys. A specially chosen set of SP-CSAs with different chemical complexity (Ni 80Fe 20, Ni 80Cr 20 and Ni 40Fe 40Cr 20) are investigated using 1.5 MeV Mn ions over a wide fluence range, from 2 × 10 13 to 1 × 10 16 ions cm –2 at room temperature. Based on an integrated study of Rutherford backscattering spectroscopy in channeling geometry and molecular dynamics simulations,more » the results demonstrate that Ni 40Fe 40Cr 20 is more radiation tolerant than Ni 80Fe 20, Ni 80Cr 20 and elemental Ni in the low fluence regime. While chemical complexity of this set of SP-CSAs is clearly demonstrated to affect defect evolution through suppressed defect production and enhanced recombination at early stages, the effect of the mixed ferro- and anti-ferromagnetic interactions is not the only controlling factor responsible for the improved radiation performance. As a result, the observed strong alloying effect on defect evolution is attributed to the altered defect migration mobilities of defect clusters in these alloys, an intrinsic characteristic of the complex energy landscapes in CSAs.« less

Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Rakočević, Z.; Bibić, N.

2016-12-01

Modification in structural and optical properties of chromium-nitride (CrN) films induced by argon ion irradiation and thermal annealings were investigated using various experimental techniques. CrN films deposited by d. c. reactive sputtering on Si substrate were implanted with 200 keV argon ions, at fluences of 5-20 × 1015 ions/cm2. As-implanted samples were then annealed in vacuum, for 2 h at 700 °C. Rutherford backscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy and spectroscopic ellipsometry (SE) measurements were carried out in order to study structural and optical properties of the layers. After irradiation with 200 keV Ar ions a damaged surface layer of nanocrystalline structure was generated, which extended beyond the implantation profile, but left an undamaged bottom zone. Partial loss of columnar structure observed in implanted samples was recovered after annealing at 700 °C and CrN started to decompose to Cr2N. This layer geometry determined from transmission electron microscopy was inferred in the analysis of SE data using the combined Drude and Tauc-Lorentz model, and the variation of the optical bandgap was deduced. The results are discussed on the basis of the changes induced in the microstructure. It was found that the optical properties of the layers are strongly dependent on the defects' concentration of CrN.

Fabrication and characterization of Bismuth-Cerium composite iron garnet epitaxial films for magneto optical applications

NASA Astrophysics Data System (ADS)

Chandra Sekhar, M.; Singh, Mahi R.

2012-10-01

The BixCe3-xFe5O12 (x = 0.8) epitaxial films of high quality were grown by means of pulsed laser deposition on paramagnetic substrates of Gadolinium Gallium Garnet. We study the modifications of substitutions in the parent garnet Y3Fe5O12 that produces a higher magneto-optical response at communication wavelengths. These films displayed a strong in plane textures which are treated in argon as well as reduced atmosphere conditions. The elemental constituents of these films were confirmed by energy dispersive-X ray analysis, elastic recoil detection system, Rutherford backscattering spectroscopy, and X-ray photoelectron spectroscopy measurements. The transmittance spectra were measured and found these films exhibit good transmittance values. The transmittance-spectra were fitted with the theoretical model and the optical constants such as refractive index and absorption edge were evaluated. The highest (negative) Faraday rotation was found for these films treated in the environment of Ar + H2. A density matrix theory has been developed for the Faraday rotation and a good agreement between the theory and experiment is found. These epitaxial garnet films can be used in a wide range of frequencies from visible to infrared spectra making them ideal for many magneto optical applications. Therefore, these films may overcome many issues in fabricating all optical isolators which is the viable solution for integrated photonics.

Analysis of Lung Tissue Using Ion Beams

NASA Astrophysics Data System (ADS)

Alvarez, J. L.; Barrera, R.; Miranda, J.

2002-08-01

In this work a comparative study is presented of the contents of metals in lung tissue from healthy patients and with lung cancer, by means of two analytical techniques: Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS). The samples of cancerous tissue were taken from 26 autopsies made to individuals died in the National Institute of Respiratory Disease (INER), 22 of cancer and 4 of other non-cancer biopsies. When analyzing the entirety of the samples, in the cancerous tissues, there were increments in the concentrations of S (4%), K (635%), Co (85%) and Cu (13%). Likewise, there were deficiencies in the concentrations of Cl (59%), Ca (6%), Fe (26%) and Zn (7%). Only in the cancerous tissues there were appearances of P, Ca, Ti, V, Cr, Mn, Ni, Br and Sr. The tissue samples were classified according to cancer types (adenocarcinomas, epidermoides and of small cell carcinoma), personal habits (smokers and alcoholic), genetic predisposition and residence place. There was a remarkable decrease in the concentration of Ca and a marked increment in the Cu in the epidermoide tissue samples with regard to those of adenocarcinoma or of small cells cancer. Also, decrements were detected in K and increments of Fe, Co and Cu in the sample belonging to people that resided in Mexico City with regard to those that resided in the State of Mexico.

Measurement of doubly differential electron bremsstrahlung cross sections at the end point (tip) for C, Al, Te, Ta and Au

NASA Astrophysics Data System (ADS)

García-Alvarez, J. A.; Fernández-Varea, J. M.; Vanin, V. R.; Santos, O. C. B.; Barros, S. F.; Malafronte, A. A.; Rodrigues, C. L.; Martins, M. N.; Koskinas, M. F.; Maidana, N. L.

2017-08-01

We have used the low-energy beam line of the São Paulo Microtron accelerator to study the maximum energy transfer point (tip) of electron-atom bremsstrahlung spectra for C, Al, Te, Ta and Au. Absolute cross sections differential in energy and angle of the emitted photon were measured for various electron kinetic energies between 20 and 100 keV, and photon emission angles of 35◦, 90◦ and 131◦. The bremsstrahlung spectra were collected with three HPGe detectors and their response functions were evaluated analytically. Rutherford backscattering spectrometry allowed us to obtain the thicknesses of the targets with good accuracy. We propose a simple model for the tip region of the bremsstrahlung spectrum emitted at a given angle, whose adjustable parameters are the mean energy of the incident beam and its spread as well as an amplitude. The model was fitted simultaneously to the pulse-height distributions recorded at the three angles, determining the doubly differential cross sections from the corresponding amplitudes. The measured values have uncertainties between 3% and 13%. The agreement of the experimental results with the theoretical partial-wave calculations of Pratt and co-workers depends on the analyzed element and angle but is generally satisfactory. In the case of Al and Au, the uncertainty attributed to the theory is probably overestimated.

A spectroscopic ellispometric study of the tunability of the optical constants and thickness of GeO{sub x} films with swift heavy ions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vijayarangamuthu, K.; Singh, Chaman; Rath, Shyama

2011-09-15

Sub-stoichiometric GeO{sub x} films were fabricated by electron-beam evaporation method. The films were irradiated with 100 MeV Ag{sup 7+} ions at fluences between 1 x 10{sup 12} and 1 x 10{sup 14} ions-cm{sup -2}. Spectroscopic ellipsometric measurements were performed in air at room temperature. The values of the layer thickness and refractive index were extracted from ellipsometry using a multilayer analysis and the Tauc Lorentz model. The refractive index (at 633 nm) of the as-deposited GeO{sub x} film was estimated to be 1.860 and decreased to 1.823 for films irradiated at an ion fluence of 1 x 10{sup 14} ions-cm{supmore » -2}. The thickness of the films also decreased after irradiation and is due to a sputtering induced by the ion beam. The change in the refractive index with ion fluence is attributed to a stoichiometric change and structural transformation represented by GeO{sub x}{yields} Ge + GeO{sub y} (y > x) occurring due to a thermal spike induced by ion irradiation. Swift heavy ions thus provide a scope for modulating the refractive index of GeO{sub x} films. The thickness and stoichiometric changes are supported by Rutherford backscattering measurements.« less

Irradiation-induced damage evolution in concentrated Ni-based alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velisa, Gihan; Ullah, Mohammad Wali; Xue, Haizhou

Understanding the effects of chemical complexity from the number, type and concentration of alloying elements in single-phase concentred solid-solution alloys (SP-CSAs) on defect dynamics and microstructure evolution is pivotal for developing next-generation radiation-tolerant structural alloys. A specially chosen set of SP-CSAs with different chemical complexity (Ni 80Fe 20, Ni 80Cr 20 and Ni 40Fe 40Cr 20) are investigated using 1.5 MeV Mn ions over a wide fluence range, from 2 × 10 13 to 1 × 10 16 ions cm –2 at room temperature. Based on an integrated study of Rutherford backscattering spectroscopy in channeling geometry and molecular dynamics simulations,more » the results demonstrate that Ni 40Fe 40Cr 20 is more radiation tolerant than Ni 80Fe 20, Ni 80Cr 20 and elemental Ni in the low fluence regime. While chemical complexity of this set of SP-CSAs is clearly demonstrated to affect defect evolution through suppressed defect production and enhanced recombination at early stages, the effect of the mixed ferro- and anti-ferromagnetic interactions is not the only controlling factor responsible for the improved radiation performance. As a result, the observed strong alloying effect on defect evolution is attributed to the altered defect migration mobilities of defect clusters in these alloys, an intrinsic characteristic of the complex energy landscapes in CSAs.« less

TiCN thin films grown by reactive crossed beam pulsed laser deposition

NASA Astrophysics Data System (ADS)

Escobar-Alarcón, L.; Camps, E.; Romero, S.; Muhl, S.; Camps, I.; Haro-Poniatowski, E.

2010-12-01

In this work, we used a crossed plasma configuration where the ablation of two different targets in a reactive atmosphere was performed to prepare nanocrystalline thin films of ternary compounds. In order to assess this alternative deposition configuration, titanium carbonitride (TiCN) thin films were deposited. Two crossed plasmas were produced by simultaneously ablating titanium and graphite targets in an Ar/N2 atmosphere. Films were deposited at room temperature onto Si (100) and AISI 4140 steel substrates whilst keeping the ablation conditions of the Ti target constant. By varying the laser fluence on the carbon target it was possible to study the effect of the carbon plasma on the characteristics of the deposited TiCN films. The structure and composition of the films were analyzed by X-ray Diffraction, Raman Spectroscopy and non-Rutherford Backscattering Spectroscopy. The hardness and elastic modulus of the films was also measured by nanoindentation. In general, the experimental results showed that the TiCN thin films were highly oriented in the (111) crystallographic direction with crystallite sizes as small as 6.0 nm. It was found that the hardness increased as the laser fluence was increased, reaching a maximum value of about 33 GPa and an elastic modulus of 244 GPa. With the proposed configuration, the carbon content could be easily varied from 42 to 5 at.% by changing the laser fluence on the carbon target.

Influence of thermal annealing and radiation enhanced diffusion processes on surface plasmon resonance of gold implanted dielectric matrices

NASA Astrophysics Data System (ADS)

Devi, Ksh. Devarani; Ojha, Sunil; Singh, Fouran

2018-03-01

Gold nanoparticles (AuNPs) embedded in fused silica and sapphire dielectric matrices were synthesized by Au ion implantation. Systematic investigations were carried out to study the influence of implantation dose, post annealing temperature, swift heavy ion (SHI) irradiation and radiation enhanced diffusion (RED). Rutherford Backscattering Spectrometry (RBS) measurements were carried out to quantify concentration and depth profile of Au present in the host matrices. X-ray diffraction (XRD) was employed to characterize AuNPs formation. As-implanted and post-annealed films were irradiated using 100 MeV Ag ions to investigate the effect of electronic energy deposition on size and shape of NPs, which is estimated indirectly by the peak shape analysis of surface plasmon resonance (SPR). The effect of volume fraction of Au and their redistribution is also reported. A strong absorption in near infra red region is also noticed and understood by the formation of percolated NPs in dielectric matrices. It is quite clear from these results that the effect of RED assisted Oswald ripening is much more pronounced than the conventional Oswald ripening for the growth of NPs in the case of silica host matrices. However for sapphire matrices, it seems that growth of NPs already completed during implantation and it may be attributed to the high diffusivity of Au in sapphire matrices during implantation process.

Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy

NASA Astrophysics Data System (ADS)

Secchi, M.; Demenev, E.; Colaux, J. L.; Giubertoni, D.; Dell'Anna, R.; Iacob, E.; Gwilliam, R. M.; Jeynes, C.; Bersani, M.

2015-11-01

This work presents a study of application of secondary ion mass spectrometry (SIMS) to measure tin concentration in Ge1-xSnx alloy with x higher than solid solubility ∼1%, i.e. well above the diluted regime where SIMS measurements usually provide the most reliable quantitative results. SIMS analysis was performed on Sn+ ion implanted Ge films, epitaxially deposited on Si, and on chemical vapor deposition deposited Ge0.93Sn0.07 alloy. Three SIMS conditions were investigated, varying primary beam ion species and secondary ion polarity keeping 1 keV impact energy. Best depth profile accuracy, best agreement with the fluences measured by Rutherford backscattering spectrometry, good detection limit (∼1 × 1017 at/cm3) and depth resolution (∼2 nm/decade) are achieved in Cs+/SnCs+ configuration. However, applied sputtering conditions (Cs+ 1 keV, 64° incidence vs. normal) induced an early formation of surface topography on the crater bottom resulting in significant variation of sputtering yield. Atomic force microscopy shows a peculiar topography developed on Ge: for oblique incidence, a topography consisting in a sequence of dots and ripples was observed on the crater bottom. This behavior is unusual for grazing incidence and has been observed to increase with the Cs+ fluence. Rotating sample during sputtering prevents this ripple formation and consequently improves the depth accuracy.

Disordering of ultra thin WO3 films by high-energy ions

NASA Astrophysics Data System (ADS)

Matsunami, N.; Kato, M.; Sataka, M.; Okayasu, S.

2017-10-01

We have studied disordering or atomic structure modification of ultra thin WO3 films under impact of high-energy ions with non-equilibrium and equilibrium charge incidence, by means of X-ray diffraction (XRD). WO3 films were prepared by thermal oxidation of W deposited on MgO substrate. Film thickness obtained by Rutherford backscattering spectrometry (RBS) is as low as 2 nm. Smoothness of film surface was observed by atomic force microscopy. It is found that the ratio of XRD intensity degradation per 90 MeV Ni+10 ion (the incident charge is lower than the equilibrium charge) to that per 90 MeV Ni ion with the equilibrium charge depends on the film thickness. Also, film thickness dependence is observed for 100 MeV Xe+14. By comparison of the experimental result with a simple model calculation based on the assumption that the mean charge of ions along the depth follows a saturation curve with power-law approximation to the charge dependent electronic stopping power, the characteristic length attaining the equilibrium charge is obtained to be ∼7 nm for 90 MeV Ni+10 ion incidence or the electron loss cross section of ∼1016 cm2, demonstrating that disordering of ultra WO3 films has been observed and a fundamental quantity can be derived through material modification.

Electronic excitation induced modifications of structural, electrical and optical properties of Cu-C60 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Inani, H.; Singhal, R.; Sharma, P.; Vishnoi, R.; Ojha, S.; Chand, S.; Sharma, G. D.

2017-09-01

High energy ion irradiation significantly affects the size and shape of nanoparticles in composites. Low concentration metal fraction embedded in fullerene matrix in form of nanocomposites was synthesized by thermal co-evaporation method. Swift heavy ion irradiation was performed with 120 MeV Au ion beam on Cu-C60 nanocomposites at different fluences 1 × 1012, 3 × 1012, 6 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Absorption spectra demonstrated that absorption intensity of nanocomposite thin film was increased whereas absorption modes of fullerene C60 were diminished with fluence. Rutherford backscattering spectroscopy was also performed to estimate the thickness of the film and atomic metal fraction in matrix and found to be 45 nm and 3%, respectively. Transmission electron microscopy was performed for structural and particle size evaluation of Cu nanoparticles (NPs) in fullerene C60 matrix. A growth of Cu nanoparticles is observed at a fluence of 3 × 1013 ions/cm2 with a bi-modal distribution in fullerene C60. Structural evolution of fullerene C60 matrix with increasing fluence of 120 MeV Au ion beam is studied by Raman spectroscopy which shows the amorphization of matrix (fullerene C60) at lower fluence. The growth of Cu nanoparticles is explained using the phenomena of Ostwald ripening.

Testing and Comparison of Imaging Detectors for Electrons in the Energy Range 10-20 keV

NASA Astrophysics Data System (ADS)

Matheson, J.; Moldovan, G.; Kirkland, A.; Allinson, N.; Abrahams, J. P.

2017-11-01

Interest in direct detectors for low-energy electrons has increased markedly in recent years. Detection of electrons in the energy range up to low tens of keV is important in techniques such as photoelectron emission microscopy (PEEM) and electron backscatter diffraction (EBSD) on scanning electron microscopes (SEMs). The PEEM technique is used both in the laboratory and on synchrotron light sources worldwide. The ubiquity of SEMs means that there is a very large market for EBSD detectors for materials studies. Currently, the most widely used detectors in these applications are based on indirect detection of incident electrons. Examples include scintillators or microchannel plates (MCPs), coupled to CCD cameras. Such approaches result in blurring in scintillators/phosphors, distortions in optical systems, and inefficiencies due the limited active area of MCPs. In principle, these difficulties can be overcome using direct detection in a semiconductor device. Growing out of a feasibility study into the use of a direct detector for use on an XPEEM, we have built at Rutherford Appleton Laboratory a system to illuminate detectors with an electron beam of energy up to 20 keV . We describe this system in detail. It has been used to measure the performance of a custom back-thinned monolithic active pixel sensor (MAPS), a detector based on the Medipix2 chip, and a commercial detector based on MCPs. We present a selection of the results from these measurements and compare and contrast different detector types.

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

NASA Astrophysics Data System (ADS)

Triyoso, D. H.; Gregory, R.; Schaeffer, J. K.; Werho, D.; Li, D.; Marcus, S.; Wilk, G. D.

2007-11-01

TaCy has been reported to have the appropriate work function for negative metal-oxide semiconductor metal in high-k metal-oxide field-effect transistors. As device size continues to shrink, a conformal deposition for metal gate electrodes is needed. In this work, we report on the development and characterization of a novel TaCy process by atomic layer deposition (ALD). Detailed physical properties of TaCy films are studied using ellipsometry, a four-point probe, Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and x-ray diffraction (XRD). RBS and XPS analysis indicate that TaCy films are near-stoichiometric, nitrogen free, and have low oxygen impurities. Powder XRD spectra showed that ALD films have a cubic microstructure. XPS carbon bonding studies revealed that little or no glassy carbon is present in the bulk of the film. Excellent electrical properties are obtained using ALD TaCy as a metal gate electrode. Well-behaved capacitance-voltage characteristics with ALD HfO2 gate dielectrics are demonstrated for TaCy thicknesses of 50, 100, and 250 Å. A low fixed charge (˜2-4×10-11 cm-2) is observed for all ALD HfO2/ALD TaCy devices. Increasing the thickness of ALD TaCy results in a decrease in work function (4.77 to 4.54 eV) and lower threshold voltages.

Growth and surface modification of LaFeO3 thin films induced by reductive annealing

NASA Astrophysics Data System (ADS)

Flynn, Brendan T.; Zhang, Kelvin H. L.; Shutthanandan, Vaithiyalingam; Varga, Tamas; Colby, Robert J.; Oleksak, Richard P.; Manandhar, Sandeep; Engelhard, Mark H.; Chambers, Scott A.; Henderson, Michael A.; Herman, Gregory S.; Thevuthasan, Suntharampillai

2015-03-01

The mixed electronic and ionic conductivity of perovskite oxides has enabled their use in diverse applications such as automotive exhaust catalysts, solid oxide fuel cell cathodes, and visible light photocatalysts. The redox chemistry at the surface of perovskite oxides is largely dependent on the oxidation state of the metal cations as well as the oxide surface stoichiometry. In this study, LaFeO3 (LFO) thin films grown on yttria-stabilized zirconia (YSZ) was characterized using both bulk and surface sensitive techniques. A combination of in situ reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) demonstrated that the film is primarily textured in the [1 0 0] direction and is stoichiometric. High-resolution transmission electron microscopy measurements show regions that are dominated by [1 0 0] oriented LFO grains that are oriented with respect to the substrates lattice. However, selected regions of the film show multiple domains of grains that are not [1 0 0] oriented. The film was annealed in an ultra-high vacuum chamber to simulate reducing conditions and studied by angle-resolved X-ray photoelectron spectroscopy (XPS). Iron was found to exist as Fe(0), Fe(II), and Fe(III) depending on the annealing conditions and the depth within the film. A decrease in the concentration of surface oxygen species was correlated with iron reduction. These results should help guide and enhance the design of LFO materials for catalytic applications.

Atomic Poetry: Using Poetry To Teach Rutherford's Discovery of the Nucleus.

ERIC Educational Resources Information Center

Abisdris, Gil; Casuga, Adele

2001-01-01

Points out how Rutherford's discovery of the nucleus changed ideas about the structure of the atom and influenced poetry. Uses Robert Frost's poems "Version" and "The Secret Sits" to teach a physical science class about atomic theory. (YDS)

Rutherford's war

NASA Astrophysics Data System (ADS)

Campbell, John

2016-02-01

Seagulls, sea lions and the comic-book hero Professor Radium were all recruited to fight the threat of submarines during the First World War. But as John Campbell explains, it was Ernest Rutherford who led the way a century ago in using acoustics to deter these deadly craft.

Napa River Restoration Project: Rutherford Reach Completion and Oakville to Oak Knoll Reach

EPA Pesticide Factsheets

Information about the SFBWQP Napa River Restoration Project: Rutherford Reach Completion/Oakville to Oak Knoll, part of an EPA competitive grant program to improve SF Bay water quality focused on restoring impaired waters and enhancing aquatic resources.

The Particle Adventure | What is fundamental? | Fundamental

Science.gov Websites

Quiz - What particles are made of The four interactions How does matter interact? The unseen effect structure Rutherford's result Rutherford's analysis How physicists experiment Deflected probe Detecting the Energy-mass conversion Accelerators How to obtain particles to accelerate Accelerating particles

27 CFR 9.133 - Rutherford.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Rutherford. 9.133 Section 9.133 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.133...

27 CFR 9.133 - Rutherford.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Rutherford. 9.133 Section 9.133 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.133...

27 CFR 9.133 - Rutherford.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Rutherford. 9.133 Section 9.133 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.133...

27 CFR 9.133 - Rutherford.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Rutherford. 9.133 Section 9.133 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.133...

Turning Plastic into Gold: An Analogy to Demonstrate The Rutherford Gold Foil Experiment

ERIC Educational Resources Information Center

Gregory, Robert B.

2007-01-01

The Rutherford-Geiger-Marsden gold foil experiment is demonstrated to give students a useful mental image of the concept or principle of chemistry. The experiment shows students that in a short time one unexpected result can change the way science looks at the world.

A method for removing arm backscatter from EPID images

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Brian W.; Greer, Peter B.; School of Mathematical and Physical Sciences, University of Newcastle, Newcastle, New South Wales 2308

2013-07-15

Purpose: To develop a method for removing the support arm backscatter from images acquired using current Varian electronic portal imaging devices (EPIDs).Methods: The effect of arm backscatter on EPID images was modeled using a kernel convolution method. The parameters of the model were optimized by comparing on-arm images to off-arm images. The model was used to develop a method to remove the effect of backscatter from measured EPID images. The performance of the backscatter removal method was tested by comparing backscatter corrected on-arm images to measured off-arm images for 17 rectangular fields of different sizes and locations on the imager.more » The method was also tested using on- and off-arm images from 42 intensity modulated radiotherapy (IMRT) fields.Results: Images generated by the backscatter removal method gave consistently better agreement with off-arm images than images without backscatter correction. For the 17 rectangular fields studied, the root mean square difference of in-plane profiles compared to off-arm profiles was reduced from 1.19% (standard deviation 0.59%) on average without backscatter removal to 0.38% (standard deviation 0.18%) when using the backscatter removal method. When comparing to the off-arm images from the 42 IMRT fields, the mean {gamma} and percentage of pixels with {gamma} < 1 were improved by the backscatter removal method in all but one of the images studied. The mean {gamma} value (1%, 1 mm) for the IMRT fields studied was reduced from 0.80 to 0.57 by using the backscatter removal method, while the mean {gamma} pass rate was increased from 72.2% to 84.6%.Conclusions: A backscatter removal method has been developed to estimate the image acquired by the EPID without any arm backscatter from an image acquired in the presence of arm backscatter. The method has been shown to produce consistently reliable results for a wide range of field sizes and jaw configurations.« less

Nanocrystalline SiC and Ti 3SiC 2 Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henager, Charles H.; Jiang, Weilin

2014-11-01

MAX phases, such as titanium silicon carbide (Ti 3SiC 2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti 3SiC 2 has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti 3SiC 2. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3SiC 2,more » SiC, and a dual-phase nanocomposite of Ti 3SiC 2/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti 3SiC 2 implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti 3SiC 2 occurs during ion implantation at 873 K. Cs in Ti 3SiC 2 is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.« less

Rutherford B. Hayes: His Contributions to American Education (The Presidential Years).

ERIC Educational Resources Information Center

Dye, Charles M.

Emphasizing the dedication with which Rutherford B. Hayes (1822-92) labored to achieve advancement in American public education, the biography discusses the historical and political events which highlighted his career. Describing Hayes as a man who stood above party politicking in his years in the White House (1877-81), the biography maintains…

Experimenting from a Distance in the Case of Rutherford Scattering

ERIC Educational Resources Information Center

Grober, S.; Vetter, M.; Eckert, B.; Jodl, H. -J.

2010-01-01

The Rutherford scattering experiment plays a central role in working out atomic models in physics and chemistry. Nevertheless, the experiment is rarely performed at school or in introductory physics courses at university. Therefore, we realized this experiment as a remotely controlled laboratory (RCL), i.e. the experiment is set up in reality and…

'Keeping in the race': physics, publication speed and national publishing strategies in Nature, 1895-1939.

PubMed

Baldwin, Melinda

2014-06-01

By the onset of the Second World War, the British scientific periodical Nature--specifically, Nature's 'Letters to the editor' column--had become a major publication venue for scientists who wished to publish short communications about their latest experimental findings. This paper argues that the Nobel Prize-winning physicist Ernest Rutherford was instrumental in establishing this use of the 'Letters to the editor' column in the early twentieth century. Rutherford's contributions set Nature apart from its fellow scientific weeklies in Britain and helped construct a defining feature of Nature's influence in the twentieth century. Rutherford's participation in the journal influenced his students and colleagues in the field of radioactivity physics and drew physicists like the German Otto Hahn and the American Bertram Borden Boltwood to submit their work to Nature as well, and Nature came to play a major role in spreading news of the latest research in the science of radioactivity. Rutherford and his colleagues established a pattern of submissions to the 'Letters to the editor' that would eventually be adopted by scientists from diverse fields and from laboratories around the world.

Rutherford-Bohr atom

NASA Astrophysics Data System (ADS)

Heilbron, J. L.

1981-03-01

Bohr used to introduce his attempts to explain clearly the principles of the quantum theory of the atom with an historical sketch, beginning invariably with the nuclear model proposed by Rutherford. That was sound pedagogy but bad history. The Rutherford-Bohr atom stands in the middle of a line of work initiated by J.J. Thomson and concluded by the invention of quantum mechanics. Thompson's program derived its inspiration from the peculiar emphasis on models characteristic of British physics of the 19th century. Rutherford's atom was a late product of the goals and conceptions of Victorian science. Bohr's modifications, although ultimately fatal to Thomson's program, initially gave further impetus to it. In the early 1920s the most promising approach to an adequate theory of the atom appeared to be the literal and detailed elaboration of the classical mechanics of multiply periodic orbits. The approach succeeded, demonstrating in an unexpected way the force of an argument often advanced by Thomson: because a mechanical model is richer in implications than the considerations for which it was advanced, it can suggest new directions of research that may lead to important discoveries.

Instability of Hydrogenated TiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandasiri, Manjula I.; Shutthanandan, V.; Manandhar, Sandeep

2015-11-06

Hydrogenated TiO2 (H-TiO2) is toted as a viable visible light photocatalyst. We report a systematic study on the thermal stability of H-implanted TiO2 using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). Protons (40 keV) implanted at a ~2 atom % level within a ~120 nm wide profile of rutile TiO2(110) were situated ~300 nm below the surface. NRA revealed that this H-profile broadened preferentially toward the surface after annealing at 373 K, dissipated out of the crystal into vacuum at 473 K, and was absent within the beam sampling depthmore » (~800 nm) at 523 K. Photoemission showed that the surface was reduced in concert with these changes. Similar anneals had no effect on pristine TiO2(110). The facile bulk diffusivity of H in rutile, as well as its activity toward interfacial reduction, significantly limits the utilization of H-TiO2 as a photocatalyst. This work was supported by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences & Biosciences. Pacific Northwest National Laboratory (PNNL) is a multiprogram national laboratory operated for DOE by Battelle. The research was performed using the Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by the Department of Energy's Office of Biological and Environmental Research and located at Pacific Northwest National Laboratory.« less

Ion beam modification of single crystalline BiVO4

NASA Astrophysics Data System (ADS)

Wendler, Elke; Bischoff, Marie; Schmidt, Emanuel; Schrempel, F.; Ellmer, Klaus; Kanis, Michael; van de Krol, Roel

2017-10-01

A single crystalline BiVO4 sample was investigated. Angular resolved Rutherford backscattering spectrometry (arRBS) was performed as a function of two orthogonal angles perpendicular to the surface. The crystal planes appearing in the angular charts are compared with the crystal structure of monoclinic BiVO4. By this comparison the crystal axis being almost normal to the surface was identified to be 〈0 0 1〉. These measurements support the control of orientation and quality of the grown BiVO4 crystal. Additionally it is found that during prolonged analysis the He ions produce a considerable amount of damage. As the nuclear energy loss of the He ions is negligibly low within the corresponding depth region, the damage is mainly caused by the electronic energy loss of the ions. For studying radiation resistance and damage formation, the BiVO4 single crystal was implanted with 200 keV Ar ions. The damage production in the Bi sublattice was analysed by RBS applying 1.8 MeV He ions in channelling configuration. The damage profiles determined from the channelling RBS spectra can be well represented by the electronic energy loss of the implanted Ar ions. From this it is concluded that, in agreement with the finding mentioned above, this energy mainly triggers damage formation in ion irradiated BiVO4. The energy for producing one displaced Bi atom as seen by RBS decreases with increasing damage concentration and varies between 33 and 3.4 eV.

The parameter influence of ion irradiation on the distribution profile of the defect in silicon films

NASA Astrophysics Data System (ADS)

Shemukhin, A. A.; Balaskshin, Yu. V.; Evseev, A. P.; Chernysh, V. S.

2017-09-01

As silicon is an important element in semiconductor devices, the process of defect formation under ion irradiation in it is studied well enough. Modern electronic components are made on silicon lattices (films) that are 100-300 nm thick (Chernysh et al., 1980; Shemukhin et al., 2012; Ieshkin et al., 2015). However, there are still features to be observed in the process of defect formation in silicon. In our work we investigate the effect of fluence and target temperature on the defect formation in films and bulk silicon samples. To investigate defect formation in the silicon films and bulk silicon samples we present experimental data on Si+ implantation with an energy of 200 keV, fluences range from 5 * 1014 to 5 * 1015 ion/cm2 for a fixed flux 1 μA/cm2 and the substrate temperatures from 150 to 350 K The sample crystallinity was investigated by using the Rutherford backscattering technique (RBS) in channeling and random modes. It is shown that in contrast to bulk silicon for which amorphization is observed at 5 × 1016 ion/cm2, the silicon films on sapphire amorphize at lower critical fluences (1015 ion/cm2). So the amorphization critical fluences depend on the target temperature. In addition it is shown that under similar implantation parameters, the disordering of silicon films under the action of the ion beam is stronger than the bulk silicon.

Towards nanometric resolution in multilayer depth profiling: a comparative study of RBS, SIMS, XPS and GDOES.

PubMed

Escobar Galindo, Ramón; Gago, Raul; Duday, David; Palacio, Carlos

2010-04-01

An increasing amount of effort is currently being directed towards the development of new functionalized nanostructured materials (i.e., multilayers and nanocomposites). Using an appropriate combination of composition and microstructure, it is possible to optimize and tailor the final properties of the material to its final application. The analytical characterization of these new complex nanostructures requires high-resolution analytical techniques that are able to provide information about surface and depth composition at the nanometric level. In this work, we comparatively review the state of the art in four different depth-profiling characterization techniques: Rutherford backscattering spectroscopy (RBS), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS) and glow discharge optical emission spectroscopy (GDOES). In addition, we predict future trends in these techniques regarding improvements in their depth resolutions. Subnanometric resolution can now be achieved in RBS using magnetic spectrometry systems. In SIMS, the use of rotating sample holders and oxygen flooding during analysis as well as the optimization of floating low-energy ion guns to lower the impact energy of the primary ions improves the depth resolution of the technique. Angle-resolved XPS provides a very powerful and nondestructive technique for obtaining depth profiling and chemical information within the range of a few monolayers. Finally, the application of mathematical tools (deconvolution algorithms and a depth-profiling model), pulsed sources and surface plasma cleaning procedures is expected to greatly improve GDOES depth resolution.

Calcium, potassium, iron, copper and zinc concentrations in the white and gray matter of the cerebellum and corpus callosum in brain of four genetic mouse strains

NASA Astrophysics Data System (ADS)

Sergeant, C.; Vesvres, M. H.; Devès, G.; Guillou, F.

2005-04-01

In the central nervous system, metallic cations are involved in oligodendrocyte maturation and myelinogenesis. Moreover, the metallic cations have been associated with pathogenesis, particularly multiple sclerosis and malignant gliomas. The brain is vulnerable to either a deficit or an excess of available trace elements. Relationship between trace metals and myelinogenesis is important in understanding a severe human pathology : the multiple sclerosis, which remains without efficient treatment. One approach to understand this disease has used mutant or transgenic mice presenting myelin deficiency or excess. But to date, the concentration of trace metals and mineral elements in white and gray matter areas in wild type brain is unknown. The aim of this study is to establish the reference concentrations of trace metals (iron, copper and zinc) and minerals (potassium and calcium) in the white and gray matter of the mouse cerebellum and corpus callosum. The brains of four different genetic mouse strains (C57Black6/SJL, C57Black6/D2, SJL and C3H) were analyzed. The freeze-dried samples were prepared to allow PIXE (Proton-induced X-ray emission) and RBS (Rutherford backscattering spectrometry) analyses with the nuclear microprobe in Bordeaux. The results obtained give the first reference values. Furthermore, one species out of the fours testes exhibited differences in calcium, iron and zinc concentrations in the white matter.

Formation of SIMOX-SOI structure by high-temperature oxygen implantation

NASA Astrophysics Data System (ADS)

Hoshino, Yasushi; Kamikawa, Tomohiro; Nakata, Jyoji

2015-12-01

We have performed oxygen ion implantation in silicon at very high substrate-temperatures (⩽1000 °C) for the purpose of forming silicon-on-insulator (SOI) structure. We have expected that the high-temperature implantation can effectively avoids ion-beam-induced damages in the SOI layer and simultaneously stabilizes the buried oxide (BOX) and SOI-Si layer. Such a high-temperature implantation makes it possible to reduce the post-implantation annealing temperature. In the present study, oxygen ions with 180 keV are incident on Si(0 0 1) substrates at various temperatures from room temperature (RT) up to 1000 °C. The ion-fluencies are in order of 1017-1018 ions/cm2. Samples have been analyzed by atomic force microscope, Rutherford backscattering, and micro-Raman spectroscopy. It is found in the AFM analysis that the surface roughness of the samples implanted at 500 °C or below are significantly small with mean roughness of less than 1 nm, and gradually increased for the 800 °C-implanted sample. On the other hand, a lot of dents are observed for the 1000 °C-implanted sample. RBS analysis has revealed that stoichiometric SOI-Si and BOX-SiO2 layers are formed by oxygen implantation at the substrate temperatures of RT, 500, and 800 °C. However, SiO2-BOX layer has been desorbed during the implantation. Raman spectra shows that the ion-beam-induced damages are fairly suppressed by such a high-temperatures implantation.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Antiferromagnetic coupling and magnetoresistance enhancement in Co-Re metallic superlattices (abstract)

NASA Astrophysics Data System (ADS)

Freitas, P. P.; From, M.; Melo, L. V.; Ferreira, J.; Trindade, I.; Monteiro, P.

1991-11-01

Co-Re metallic superlattices were prepared that show antiferromagnetic exchange coupling and enhanced saturation magnetoresistance for particular values of the Re spacer thickness. We report studies on films with the structure glass /150 Å Re/[13 ÅCo/tRe]16/50 Å Re, with tRe ranging from 3 to 40 Å. These structures were grown by magnetron sputtering in a system with a base pressure of 1×10-7 Torr with deposition rates of 0.3 and 0.4 Å/s for Co and Re, respectively. x-ray diffractograms indicate the structure to be highly textured with the c axis perpendicular to the sample plane. The superlattice structure was obtained from high-angle θ-2θ scans. First-, second-, and third-order satellites are observed on both sides of the central [002] peak. Periodicity and bilayer composition are obtained from comparison of the data with a theoretical calculation of the x-ray diffractogram. Thickness calibration was confirmed by Rutherford backscattering and profilometer data. In-plane magnetization and magnetoresistance data (Δρ/ρ) indicate that stronger antiferromagnetic coupling and highest Δρ/ρ occur for tRe≊6 Å. The saturation field (Hs) needed to align contiguous antiferromagnetically coupled Co layers is about 1 T. This corresponds to an exchange coupling between the Co layer J≊-1 erg/cm2. (Δρ/ρ) reaches 2% in samples deposited at 170 °C. This data confirms results obtained by Parkin et al.1 in Co-Ru and Co-Cr superlattices.

Fabrication and characterization of Bismuth-Cerium composite iron garnet epitaxial films for magneto optical applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandra Sekhar, M.; Singh, Mahi R.

2012-10-15

The Bi{sub x}Ce{sub 3-x}Fe{sub 5}O{sub 12} (x = 0.8) epitaxial films of high quality were grown by means of pulsed laser deposition on paramagnetic substrates of Gadolinium Gallium Garnet. We study the modifications of substitutions in the parent garnet Y{sub 3}Fe{sub 5}O{sub 12} that produces a higher magneto-optical response at communication wavelengths. These films displayed a strong in plane textures which are treated in argon as well as reduced atmosphere conditions. The elemental constituents of these films were confirmed by energy dispersive-X ray analysis, elastic recoil detection system, Rutherford backscattering spectroscopy, and X-ray photoelectron spectroscopy measurements. The transmittance spectra weremore » measured and found these films exhibit good transmittance values. The transmittance-spectra were fitted with the theoretical model and the optical constants such as refractive index and absorption edge were evaluated. The highest (negative) Faraday rotation was found for these films treated in the environment of Ar + H{sub 2}. A density matrix theory has been developed for the Faraday rotation and a good agreement between the theory and experiment is found. These epitaxial garnet films can be used in a wide range of frequencies from visible to infrared spectra making them ideal for many magneto optical applications. Therefore, these films may overcome many issues in fabricating all optical isolators which is the viable solution for integrated photonics.« less

Nagaoka's atomic model and hyperfine interactions.

PubMed

Inamura, Takashi T

2016-01-01

The prevailing view of Nagaoka's "Saturnian" atom is so misleading that today many people have an erroneous picture of Nagaoka's vision. They believe it to be a system involving a 'giant core' with electrons circulating just outside. Actually, though, in view of the Coulomb potential related to the atomic nucleus, Nagaoka's model is exactly the same as Rutherford's. This is true of the Bohr atom, too. To give proper credit, Nagaoka should be remembered together with Rutherford and Bohr in the history of the atomic model. It is also pointed out that Nagaoka was a pioneer of understanding hyperfine interactions in order to study nuclear structure.

The 40 and 50 GHz propagation experiments at the Rutherford Appleton Laboratory, UK, using the ITALSAT beacons

NASA Technical Reports Server (NTRS)

Woodroffe, J. M.; Davies, P. G.; Ladd, D. N.; Norbury, John R.

1994-01-01

This paper describes the current experimental program and future plans for the reception of transmissions from the 18.7, 39.6, and 49.5 GHz beacons from the ITALSAT satellite by the Radio Communications Research Unit at Rutherford Appleton Laboratory, UK. The Radio Communications Research Unit, which has had considerable experience in developing experimental millimetric equipment for propagation studies, has initiated the development of a single-channel receiver and a triple-channel receiver to measure propagation effects at 49.5 GHz and 39.6 GHz respectively. The initial location of the receivers will be at Chilbolton, Hampshire, UK.

A novel green approach for reduction of free standing graphene oxide: electrical and electronic structural investigations.

PubMed

Saravanan, K; Panigrahi, B K; Suresh, K; Sundaravel, B; Magudapathy, P; Gupta, Mukul

2018-08-24

Ion beam irradiation technique has been proposed, for efficient, fast and eco-friendly reduction of graphene oxide (GO), as an alternative to the conventional methods. 5 MeV, Au + ion beam has been used to reduce the free standing GO flake. Both electronic and nuclear energy loss mechanisms of the irradiation process play a major role in removal of oxygen moieties and recovery of graphene network. Atomic resolution scanning tunnelling microscopy analysis of the irradiated GO flake shows the characteristic honeycomb structure of graphene. X-ray absorption near edge structure analysis at C K-edge reveals that the features of the irradiated GO flake resemble the few layer graphene. Resonant Rutherford backscattering spectrometry analysis evidenced an enhanced C/O ratio of ∼23 in the irradiated GO. In situ sheet resistance measurements exhibit a sharp decrease of resistance (few 100 s of Ω) at a fluence of 6.5 × 10 14 ions cm -2 . Photoluminescence spectroscopic analysis of irradiated GO shows a sharp blue emission, while pristine GO exhibits a broad emission in the visible-near IR region. Region selective reduction, tunable electrical and optical properties by controlling C/O ratio makes ion irradiation as a versatile tool for the green reduction of GO for diverse applications.

Investigation of structure and mechanical properties of plasma vapor deposited nanocomposite TiBN films

NASA Astrophysics Data System (ADS)

Han, Bin; Neena, D.; Wang, Zesong; Kondamareddy, K. k.; Li, Na; Zuo, Wenbin; Yan, Shaojian; Liu, Chuansheng; Fu, Dejun

2017-04-01

TiBN coatings have huge potential applications as they have excellent properties with increasing modern industrial requirements. Nanocomposite TiBN coatings were synthesized on cemented carbide, high speed steel and Si substrates by using cathodic arc plasma ion plating from pure TiB2 ceramic targets. The structure and mechanical properties of the TiBN coatings were significantly influenced by the nitrogen partial pressure. Rutherford backscattering spectrometry demonstrates that the nitrogen content of the coating varied from 2.8% to 34.5% and high-resolution electron microscopy images reveal that all coatings have the characteristic of nanocrystals embedded in an amorphous matrix. The root-mean-square roughness of the coatings increases from 3.73 to 14.64 nm and the coefficients of friction of the coatings at room temperature vary from 0.54 to 0.73 with increasing nitrogen partial pressure. The microhardness of the coating increases up to 35.7 GPa at 10 sccm N2 flow rate. The smallest wear rate is 2.65 × 10-15 m3 N-1 m-1 which indicates that TiBN coatings have excellent wear resistance. The adhesion test revealed that the TiBN coatings have good adhesion at low nitrogen partial pressure.

Influence of the bound polymer layer on nanoparticle diffusion in polymer melts

DOE PAGES

Griffin, Philip J.; Bocharova, Vera; Middleton, L. Robert; ...

2016-09-23

We measure the center-of-mass diffusion of silica nanoparticles (NPs) in entangled poly(2-vinylpyridine) (P2VP) melts using Rutherford backscattering spectrometry. While these NPs are well within the size regime where enhanced, nonhydrodynamic NP transport is theoretically predicted and has been observed experimentally (2R NP/d tube ≈ 3, where 2R NP is the NP diameter and d tube is the tube diameter), we find that the diffusion of these NPs in P2VP is in fact well-described by the hydrodynamic Stokes–Einstein relation. The effective NP diameter 2R eff is significantly larger than 2R NP and strongly dependent on P2VP molecular weight, consistent with themore » presence of a bound polymer layer on the NP surface with thickness h eff ≈ 1.1R g. Our results show that the bound polymer layer significantly augments the NP hydrodynamic size in polymer melts with attractive polymer–NP interactions and effectively transitions the mechanism of NP diffusion from the nonhydrodynamic to hydrodynamic regime, particularly at high molecular weights where NP transport is expected to be notably enhanced. Lastly, these results provide the first experimental demonstration that hydrodynamic NP transport in polymer melts requires particles of size ≳5d tube, consistent with recent theoretical predictions.« less

Polycrystalline La1-xSrxMnO3 films on silicon: Influence of post-Deposition annealing on structural, (Magneto-)Optical, and (Magneto-)Electrical properties

NASA Astrophysics Data System (ADS)

Thoma, Patrick; Monecke, Manuel; Buja, Oana-Maria; Solonenko, Dmytro; Dudric, Roxana; Ciubotariu, Oana-Tereza; Albrecht, Manfred; Deac, Iosif G.; Tetean, Romulus; Zahn, Dietrich R. T.; Salvan, Georgeta

2018-01-01

The integration of La1-xSrxMnO3 (LSMO) thin film technology into established industrial silicon processes is regarded as challenging due to lattice mismatch, thermal expansion, and chemical reactions at the interface of LSMO and silicon. In this work, we investigated the physical properties of thin La0.73Sr0.27MnO3 films deposited by magnetron sputtering on silicon without a lattice matching buffer layer. The influence of a post-deposition annealing treatment on the structural, (magneto-)optical, and (magneto-)electrical properties was investigated by a variety of techniques. Using Rutherford backscattering spectroscopy, atomic force microscopy, Raman spectroscopy, and X-ray diffraction we could show that the thin films exhibit a polycrystalline, rhombohedral structure after a post-deposition annealing of at least 700 °C. The dielectric tensor in the spectral range from 1.7 eV to 5 eV determined from spectroscopic ellipsometry in combination with magneto-optical Kerr effect spectroscopy was found to be comparable to that of lattice matched films on single crystal substrates reported in literature [1]. The values of the metal-isolator transition temperature and temperature-dependent resistivities also reflect a high degree of crystalline quality of the thermally treated films.

High resolution Li depth profiling of solid state Li ion battery by TERD technique with high energy light ions

NASA Astrophysics Data System (ADS)

Morita, K.; Tsuchiya, B.; Ohnishi, J.; Yamamoto, T.; Iriyama, Y.; Tsuchida, H.; Majima, T.; Suzuki, K.

2018-07-01

Li depth profiles in Au/Si/LiPON/LCO/Au (LCO = LiCoO2, LiPON = Li3.3PO3.8N0.2) thin films battery under charging condition, prepared on self-supporting Al substrate, have been in situ measured by means of transmission elastic recoil detection (TERD) and Rutherford backscattering spectroscopy (RBS) techniques not only with 5.4 MeV He2+ ion beam without absorber, but also 9 MeV O4+ ion beam with Al absorber. In experiments with 5.4 MeV He2+, well-resolved step-wise TERD spectra have been observed, from which thickness and Li composition of constituent films of the battery are directly estimated. The Li transport from LCO to Si films through LiPON as well as return-back of Li from Si to LCO films and Li leakage into the Al substrate out of the battery system by over-charging under charging condition have been observed in the experiments both 5.4 MeV He2+ and 9 MeV O4+. The latter result indicates that these techniques are applicable to testing degradation of the battery performance by repetition of charging and discharging. Both results are compared in details with each other.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Haizhou; Zhang, Yanwen; Zhu, Zihua

Single crystalline 6H-SiC samples were irradiated at 150 K with 2 MeV Pt ions. The local volume swelling was determined by electron energy loss spectroscopy (EELS), and a nearly sigmoidal dependence on irradiation dose is observed. The disorder profiles and ion distribution were determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy, and secondary ion mass spectrometry. Since the volume swelling reaches 12% over the damage region at high ion fluence, the effect of lattice expansion is considered and corrected for in the analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stoppingmore » and Range of Ions in Matter).When compared with the measured profiles, the SRIM code predictions of ion distribution and the damage profiles are underestimated due to significant overestimation of the electronic stopping power for the slow heavy Pt ions. By utilizing the reciprocity method, which is based on the invariance of the inelastic energy loss in ion-solid collisions against interchange of projectile and target atom, a much lower electronic stopping power is deduced. A simple approach, based on reducing the density of SiC target in SRIM simulation, is proposed to compensate the overestimated SRIM electronic stopping power values, which results in improved agreement between predicted and measured damage profiles and ion ranges.« less

Defect formation in MeV H+ implanted GaN and 4H-SiC investigated by cross-sectional Raman spectroscopy

NASA Astrophysics Data System (ADS)

Huang, Kai; Jia, Qi; You, Tiangui; Zhang, Shibin; Lin, Jiajie; Zhang, Runchun; Zhou, Min; Yu, Wenjie; Zhang, Bo; Ou, Xin; Wang, Xi

2017-09-01

Cross-sectional Raman spectroscopy is used to characterize the defect formation and the defect recovery in MeV H+ implanted bulk GaN and 4H-SiC in the high energy MeV ion-cut process. The Raman intensity decreases but the forbidden modes are activated at the damage region, and the intensity decrease is proportional to the damage level. The Raman spectrum is quite sensitive to detect the damage recovery after annealing. The main peak intensity increases and the forbidden mode disappears in both annealed GaN and 4H-SiC samples. The Raman spectra of GaN samples annealed at different temperatures suggest that higher annealing temperature is more efficient for damage recovery. While, the Raman spectra of SiC indicate that higher implantation temperature results in heavier lattice damage and other polytype clusters might be generated by high annealing temperature in the annealed SiC samples. The cross-sectional Raman spectroscopy is a straightforward method to characterize lattice damage and damage recovery in high energy ion-cut process. It can serve as a fast supplementary measurement technique to Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) and transmission electron microscope (TEM) for the defect characterizations.

Au-rich filamentary behavior and associated subband gap optical absorption in hyperdoped Si

NASA Astrophysics Data System (ADS)

Yang, W.; Akey, A. J.; Smillie, L. A.; Mailoa, J. P.; Johnson, B. C.; McCallum, J. C.; Macdonald, D.; Buonassisi, T.; Aziz, M. J.; Williams, J. S.

2017-12-01

Au-hyperdoped Si, synthesized by ion implantation and pulsed laser melting, is known to exhibit a strong sub-band gap photoresponse that scales monotonically with the Au concentration. However, there is thought to be a limit to this behavior since ultrahigh Au concentrations (>1 ×1020c m-3 ) are expected to induce cellular breakdown during the rapid resolidification of Si, a process that is associated with significant lateral impurity precipitation. This work shows that the cellular morphology observed in Au-hyperdoped Si differs from that in conventional, steady-state cellular breakdown. In particular, Rutherford backscattering spectrometry combined with channeling and transmission electron microscopy revealed an inhomogeneous Au distribution and a subsurface network of Au-rich filaments, within which the Au impurities largely reside on substitutional positions in the crystalline Si lattice, at concentrations as high as ˜3 at. %. The measured substitutional Au dose, regardless of the presence of Au-rich filaments, correlates strongly with the sub-band gap optical absorptance. Upon subsequent thermal treatment, the supersaturated Au forms precipitates, while the Au substitutionality and the sub-band gap optical absorption both decrease. These results offer insight into a metastable filamentary regime in Au-hyperdoped Si that has important implications for Si-based infrared optoelectronics.

Tailoring the structural and optical properties of TiN thin films by Ag ion implantation

NASA Astrophysics Data System (ADS)

Popović, M.; Novaković, M.; Rakočević, Z.; Bibić, N.

2016-12-01

Titanium nitride (TiN) thin films thickness of ∼260 nm prepared by dc reactive sputtering were irradiated with 200 keV silver (Ag) ions to the fluences ranging from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. After implantation TiN layers were annealed 2 h at 700 °C in a vacuum. Ion irradiation-induced microstructural changes were examined by using Rutherford backscattering spectrometry, X-ray diffraction and transmission electron microscopy, while the surface topography was observed using atomic force microscopy. Spectroscopic ellipsometry was employed to get insights on the optical and electronic properties of TiN films with respect to their microstructure. The results showed that the irradiations lead to deformation of the lattice, increasing disorder and formation of new Ag phase. The optical results demonstrate the contribution of surface plasmon resonace (SPR) of Ag particles. SPR position shifted in the range of 354.3-476.9 nm when Ag ion fluence varied from 5 × 1015 ions/cm2 to 20 × 1015 ions/cm2. Shift in peak wavelength shows dependence on Ag particles concentration, suggesting that interaction between Ag particles dominate the surface plasmon resonance effect. Presence of Ag as second metal in the layer leads to overall decrease of optical resistivity of TiN.

Tailoring plasmonic properties of metal nanoparticle-embedded dielectric thin films: the sandwich method of preparation

NASA Astrophysics Data System (ADS)

Laha, Ranjit; Malar, P.; Osipowicz, Thomas; Kasiviswanathan, S.

2017-09-01

Tailoring of plasmonic properties of metal nanoparticle-embedded dielectric thin films are very crucial for many thin film-based applications. We, herein, investigate the various ways of tuning the plasmonic positions of gold nanoparticles (AuNPs)-embedded indium oxide thin films (Au:IO) through a sequence-specific sandwich method. The sandwich method is a four-step process involving deposition of In2O3 film by magnetron sputtering in first and fourth steps, thermal evaporation of Au on to In2O3 film in second and annealing of Au/In2O3 film in the third step. The Au:IO films were characterized by x-ray diffraction, spectrophotometry and transmission electron microscopy. The size and shape of the embedded nanoparticles were found from Rutherford back-scattering spectrometry. Based on dynamic Maxwell Garnett theory, the observed plasmon resonance position was ascribed to the oblate shape of AuNPs formed in sandwich method. Finally, through experimental data, it was shown that the plasmon resonance position of Au:IO thin films can be tuned by 125 nm. The method shown here can be used to tune the plasmon resonance position over the entire range of visible region for the thin films made from other combinations of metal-dielectric pair.

The stopping power and energy straggling of light ions in graphene oxide foils

NASA Astrophysics Data System (ADS)

Mikšová, R.; Macková, A.; Malinský, P.; Sofer, Z.

2017-09-01

Energy-loss and straggling experiments were performed using 2-4 MeV 1H+ and 7.4-9.0 MeV 4He2+ ions in graphene oxide foils by the transmission technique. The thickness of the graphene oxide foils was determined using a detailed image analysis of a graphene oxide cut, which was used to refine the graphene oxide density. The density was determined by the standard technique of micro-balance weighing. The stoichiometry of the graphene oxide foils before the irradiation was determined by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA) using 2 and 2.5 MeV 4He+. The measured energy stopping powers for hydrogen and helium ions in graphene oxide were compared with the predictions obtained from the SRIM-2013 code. The energy straggling was compared with that calculated using Bohr's, Bethe-Livingston and Yang predictions. The results show that the stopping power of graphene oxide foils irradiated by both ion species decreases with increasing energies, the differences between the measured and predicted values being below 3.8%. The energy straggling determined in our experiment is higher than Bohr's and Bethe-Livingston predicted values; the predictions by Yang are in better agreement with our experiment.

Electronic stopping powers for heavy ions in SiC and SiO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, K.; Xue, H.; Zhang, Y., E-mail: Zhangy1@ornl.gov

2014-01-28

Accurate information on electronic stopping power is fundamental for broad advances in materials science, electronic industry, space exploration, and sustainable energy technologies. In the case of slow heavy ions in light targets, current codes and models provide significantly inconsistent predictions, among which the Stopping and Range of Ions in Matter (SRIM) code is the most commonly used one. Experimental evidence, however, has demonstrated considerable errors in the predicted ion and damage profiles based on SRIM stopping powers. In this work, electronic stopping powers for Cl, Br, I, and Au ions are experimentally determined in two important functional materials, SiC andmore » SiO{sub 2}, based on a single ion technique, and new electronic stopping power values are derived over the energy regime from 0 to 15 MeV, where large deviations from the SRIM predictions are observed. As an experimental validation, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies from 700 keV to 15 MeV. The measured ion distributions by both RBS and SIMS are considerably deeper than the SRIM predictions, but agree well with predictions based on our derived stopping powers.« less

In situ Pulsed Laser Deposition of C-Axis Oriented MgB2 Films and Their Characterization

NASA Technical Reports Server (NTRS)

Shinde, Sanjay; Lakew, Brook; Ogale, S. B.; Kulkarni, V. N.; Kale, S. N.; Venkatesan, T.

2004-01-01

The recent discovery of an intermetallic superconductor MgB2 has renewed interest in the area of superconductivity not only because of fundamental understanding of superconductivity but also due to its potential applicability in devices such as thermal detectors. Considerable amount of research has been devoted to obtain MgB2 films by an all in situ growth technique. We have grown MgB2 thin films by an all in situ pulsed laser deposition process from pure B and Mg targets. Ultrathin layers of B and Mg were deposited in a multilayer configuration. Hundreds of such Mg-B bilayers with a capping Mg layer on the top were deposited on sapphire substrate. These depositions were done in high vacuum (approx. 10(exp -7) Torr) and at room temperature. After deposition, such a configuration was annealed at high temperature for a short time in a forming gas (4% H2 in Ar). The best films, obtained by this procedure, showed superconducting transition temperature approx. 30 K. These films have been characterized by x-ray diffraction, Rutherford Backscattering Spectrometry, AC susceptibility-, resistivity- (with and without magnetic field) and 1/f noise-measurements. The physical properties of these films will be presented and discussed.

Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

DOE Office of Scientific and Technical Information (OSTI.GOV)

Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van

2014-08-07

We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can bemore » expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.« less

Electronic Stopping Powers For Heavy Ions In SiC And SiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Ke; Zhang, Y.; Zhu, Zihua

2014-01-24

Accurate information on electronic stopping power is fundamental for broad advances in materials science, electronic industry, space exploration, and sustainable energy technologies. In the case of slow heavy ions in light targets, current codes and models provide significantly inconsistent predictions, among which the Stopping and Range of Ions in Matter (SRIM) code is the most commonly used one. Experimental evidence, however, has demonstrated considerable errors in the predicted ion and damage profiles based on SRIM stopping powers. In this work, electronic stopping powers for Cl, Br, I, and Au ions are experimentally determined in two important functional materials, SiC andmore » SiO2, based on a single ion technique, and new electronic stopping power values are derived over the energy regime from 0 to 15 MeV, where large deviations from the SRIM predictions are observed. As an experimental validation, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies from 700 keV to 15MeV. The measured ion distributions by both RBS and SIMS are considerably deeper than the SRIM predictions, but agree well with predictions based on our derived stopping powers.« less

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

NASA Astrophysics Data System (ADS)

Güner, S.; Budak, S.; Gibson, B.; Ila, D.

2014-08-01

We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Irradiation-induced Ag-colloid formation in ion-exchanged soda-lime glass

NASA Astrophysics Data System (ADS)

Caccavale, F.; De Marchi, G.; Gonella, F.; Mazzoldi, P.; Meneghini, C.; Quaranta, A.; Arnold, G. W.; Battaglin, G.; Mattei, G.

1995-03-01

Ion-exchanged glass samples were obtained by immersing soda-lime slides in molten salt baths of molar concentration in the range 1-20% AgNO 3 in NaNO 3, at temperatures varying from 320 to 350°C, and processing times of the order of a few minutes. Irradiations of exchanged samples were subsequently performed by using H +m, He +, N + ions at different energies in order to obtain comparable projected ranges. The fluence was varied between 5 × 10 15 and 2 × 10 17 ions/cm 2. Most of the samples were treated at current densities lower than 2 μA/cm 2, in order to avoid heating effects. Some samples were irradiated with 4 keV electrons, corresponding to a range of 250 nm. The formation of nanoclusters of radii in the range 1-10 nm has been observed after irradiation, depending on the treatment conditions. The precipitation process is governed by the electronic energy deposition of incident particles. The most desirable results are obtained for helium implants. The process was characterized by the use of Secondary Ion Mass Spectrometry (SIMS) and nuclear techniques (Rutherford Backscattering (RBS), Nuclear Reactions (NRA)), in order to determine concentration-depth profiles and by optical absorption and Transmission Electron Microscopy (TEM) measurements for the silver nanoclusters detection and size evaluation.

Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties.

PubMed

Yuan, Ye; Hübner, René; Liu, Fang; Sawicki, Maciej; Gordan, Ovidiu; Salvan, G; Zahn, D R T; Banerjee, D; Baehtz, Carsten; Helm, Manfred; Zhou, Shengqiang

2016-02-17

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm(2)). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

Structural and optical properties of MgxAl1-xHy gradient thin films: a combinatorial approach

NASA Astrophysics Data System (ADS)

Gremaud, R.; Borgschulte, A.; Chacon, C.; van Mechelen, J. L. M.; Schreuders, H.; Züttel, A.; Hjörvarsson, B.; Dam, B.; Griessen, R.

2006-07-01

The structural, optical and dc electrical properties of MgxAl1-x (0.2≤x≤0.9) gradient thin films covered with Pd/Mg are investigated before and after exposure to hydrogen. We use hydrogenography, a novel high-throughput optical technique, to map simultaneously all the hydride forming compositions and the kinetics thereof in the gradient thin film. Metallic Mg in the MgxAl1-x layer undergoes a metal-to-semiconductor transition and MgH2 is formed for all Mg fractions x investigated. The presence of an amorphous Mg-Al phase in the thin film phase diagram enhances strongly the kinetics of hydrogenation. In the Al-rich part of the film, a complex H-induced segregation of MgH2 and Al occurs. This uncommon large-scale segregation is evidenced by metal and hydrogen profiling using Rutherford backscattering spectrometry and resonant nuclear analysis based on the reaction 1H(15N,αγ)12C. Besides MgH2, an additional semiconducting phase is found by electrical conductivity measurements around an atomic [Al]/[Mg] ratio of 2 (x=0.33). This suggests that the film is partially transformed into Mg(AlH4)2 at around this composition.

Tribo-mechanical properties of thin boron coatings deposited on polished cobalt alloy surfaces for orthopedic applications

PubMed Central

Klepper, C. C.; Williams, J. M.; Truhan, J.J.; Qu, J.; Riester, L.; Hazelton, R. C.; Moschella, J.J.; Blau, P.J.; Anderson, J.P.; Popoola, O.O.; Keitz, M.D.

2008-01-01

This paper presents experimental evidence that thin (<∼200 nm) boron coatings, deposited with a (vacuum) cathodic arc technique on pre-polished Co-Cr-Mo surfaces, could potentially extend the life of metal-on-polymer orthopedic devices using cast Co-Cr-Mo alloy for the metal component. The primary tribological test used a linear, reciprocating pin-on-disc arrangement, with pins made of ultra-high molecular weight polyethylene. The disks were cast Co-Cr-Mo samples that were metallographically polished and then coated with boron at a substrate bias of 500 V and at about 100 °C. The wear tests were carried out in a saline solution to simulate the biological environment. The improvements were manifested by the absence of a detectable wear track scar on the coated metal component, while significant polymer transfer film was detected on the uncoated (control) samples tested under the same conditions. The polymer transfer track was characterized with both profilometry and Rutherford Backscattering Spectroscopy. Mechanical characterization of the thin films included nano-indentation, as well as additional pin-on-disk tests with a steel ball to demonstrate adhesion, using ultra-high frequency acoustic microscopy to probe for any void occurrence at the coating-substrate interface. PMID:19340285

Self-assembly of magnetic nanoclusters in diamond-like carbon by diffusion processes enhanced by collision cascades

NASA Astrophysics Data System (ADS)

Gupta, P.; Williams, G. V. M.; Hübner, R.; Vajandar, S.; Osipowicz, T.; Heinig, K.-H.; Becker, H.-W.; Markwitz, A.

2017-04-01

Mono-energetic cobalt implantation into hydrogenated diamond-like carbon at room temperature results in a bimodal distribution of implanted atoms without any thermal treatment. The ˜100 nm thin films were synthesised by mass selective ion beam deposition. The films were implanted with cobalt at an energy of 30 keV and an ion current density of ˜5 μA cm-2. Simulations suggest the implantation profile to be single Gaussian with a projected range of ˜37 nm. High resolution Rutherford backscattering measurements reveal that a bimodal distribution evolves from a single near-Gaussian distribution as the fluence increases from 1.2 to 7 × 1016 cm-2. Cross-sectional transmission electron microscopy further reveals that the implanted atoms cluster into nanoparticles. At high implantation doses, the nanoparticles assemble primarily in two bands: one near the surface with nanoparticle diameters of up to 5 nm and the other beyond the projected range with ˜2 nm nanoparticles. The bimodal distribution along with the nanoparticle formation is explained with diffusion enhanced by energy deposited during collision cascades, relaxation of thermal spikes, and defects formed during ion implantation. This unique distribution of magnetic nanoparticles with the bimodal size and range is of significant interest to magnetic semiconductor and sensor applications.

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

NASA Astrophysics Data System (ADS)

Dev, B. N.; Banu, Nasrin; Fassbender, J.; Grenzer, J.; Schell, N.; Bischoff, L.; Groetzschel, R.; McCord, J.

2017-10-01

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(15 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 µm wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favour an alignment of magnetization parallel to the stripe axis, the opposite behaviour is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behaviour.

The flip-over effect in pulsed laser deposition: Is it relevant at high background gas pressures?

NASA Astrophysics Data System (ADS)

Ojeda-G-P, Alejandro; Schneider, Christof W.; Döbeli, Max; Lippert, Thomas; Wokaun, Alexander

2015-12-01

In pulsed laser deposition the use of a rectangular or elliptical beam spot with a non 1:1 aspect ratio leads to the so called flip-over effect. Here, the longest dimension of the laser spot results in the shortest direction of plasma plume expansion. This effect has been mainly reported for vacuum depositions of single element targets and is particularly noticeable when the aspect ratio of the beam spot is large. We investigate the flip-over effect in vacuum and at three relevant background-gas pressures for pulsed laser deposition using a La0.4Ca0.6MnO3 target by measuring the thickness dependence of the deposited material as a function of angle. The film thicknesses and compositions are determined by Rutherford backscattering and argon is used to reduce the influence of additional chemical reactions in the plasma. The results show the prevalence of the flip-over effect for all pressures except for the highest, i.e. 1 × 10-1 mbar, where the film thickness is constant for all angles. The composition profiles show noticeable compositional variations of up to 30% with respect to the target material depending on the background gas pressure, the angular location, and the laser spot dimensions.

Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32-1.0) single crystals

DOE PAGES

Zhang, Limin; Jiang, Weilin; Dissanayake, Amila C.; ...

2016-06-27

Lattice disorder and compositional changes in InxGa1-xN (x=0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3E13 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x=0.32 and 0.47),more » significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x=0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

NASA Astrophysics Data System (ADS)

Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

2018-03-01

The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

Family Socialization Perceptions Among Black and White High School Students in Rutherford County, Tennessee: Comparison and Contrast.

ERIC Educational Resources Information Center

Aseltine, Gwendolyn Pamenter

A questionnaire formulated from sections of the Inventory on Family Life, prepared by the Tennessee Commission on Children and Youth, was administered to over two thousand high school students in Rutherford County, Tennessee. The questionnaire was designed to gather responses on a five point scale regarding stable and unstable family…

Physics for Teachers: Understanding Physics: David Cassidy, Gerald Holton, & James Rutherford

NASA Astrophysics Data System (ADS)

Hubisz, John L.

2009-11-01

Physics for Teachers: Understanding Physics, by David Cassidy, Gerald Holton, & James Rutherford and published by Springer Verlag, New York, NY 10010 (2002), pp. xxiii + 851 80.00 hardback. ISBN 0-387-98756-8. Student Guide & Instructor Guide are also available. The text and Instructor Guide are available online at http://www.dcassidybooks.com/up.html

Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

NASA Astrophysics Data System (ADS)

Quevedo Lopez, Manuel Angel

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

Peripheral arterial disease and critical limb ischaemia: still poor outcomes and lack of guideline adherence.

PubMed

Reinecke, Holger; Unrath, Michael; Freisinger, Eva; Bunzemeier, Holger; Meyborg, Matthias; Lüders, Florian; Gebauer, Katrin; Roeder, Norbert; Berger, Klaus; Malyar, Nasser M

2015-04-14

Only few and historic studies reported a bad prognosis of peripheral arterial disease (PAD) and critical limb ischaemia (CLI). The contemporary state of treatment and outcomes should be assessed. From the largest public health insurance in Germany, all in- and outpatient diagnosis and procedural data were retrospectively obtained from a cohort of 41 882 patients hospitalized due to PAD during 2009-2011, including a follow-up until 2013. Patients were classified in Rutherford categories 1-3 (n = 21 197), 4 (n = 5353), 5 (n = 6916), and 6 (n = 8416). The proportions of patients with classical risk factors such as hypertension, dyslipidaemia, and smoking declined with higher Rutherford categories (each P < 0.001) while diabetes, chronic kidney disease, and chronic heart failure increased (each P < 0.001). Angiographies and revascularizations were performed less often in advanced PAD (each P < 0.001). In-hospital amputations increased continuously from 0.5% in Rutherford 1-3 to 42% in Rutherford 6, as also myocardial infarctions, strokes, and deaths (each P < 0.001). Among 4298 amputated patients with CLI, 37% had not received any angiography or revascularization neither during index hospitalization nor the 24 months before. During follow-up (mean 1144 days), 7825 patients were amputated and 10 880 died. Kaplan-Meier models projected 4-year mortality risks of 18.9, 37.7, 52.2, and 63.5% in Rutherford 1-3, 4, 5, and 6, and for amputation of 4.6, 12.1, 35.3, and 67.3%, respectively. In multivariable Cox regression models, PAD categories were significant predictors of death, amputation, myocardial infarction, and stroke (each P < 0.001). Length of in-hospital stay (5.8 ± 6.7 days, 10.7 ± 11.1days, 15.2 ± 13.8 days and 22.1 ± 20.3 days; P < 0.001) and mean case costs (3662 ± 3186 €, 5316 ± 6139 €, 6021 ± 4892 €, and 8461 ± 8515 €; P < 0.001) increased continuously in Rutherford 1-3, 4, 5, and 6. While only 49% of the patients suffered from CLI, these produced 65% of in-hospital costs (141 million €), and 56% during follow-up (336 million €). Regardless of recent advances in PAD treatment, current outcomes remain poor especially in CLI. Despite overwhelming evidence for reduction of limb loss by revascularization, CLI patients still received significantly less angiographies and revascularizations. © The Author 2015. Published by Oxford University Press on behalf of the European Society of Cardiology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamada, R.; Ambrosio, G.; Barzi, E.

Feasibility study of 15-Tesla dipole magnets wound with a new copper stabilized RHQT Nb{sub 3}Al Rutherford cable is presented. A new practical long copper stabilized RHQT Nb{sub 3}Al strand is presented, which is being developed and manufactured at the National Institute of Material Science (NIMS) in Japan. It has achieved a non-copper J{sub c} of 1000A/mm{sup 2} at 15 Tesla at 4.2K, with a copper over non-copper ratio of 1.04, and a filament size less than 50 microns. For this design study a short Rutherford cable with 28 Nb{sub 3}Al strands of 1 mm diameter will be fabricated late thismore » year. The cosine theta magnet cross section is designed using ROXIE, and the stress and strain in the coil is estimated and studied with the characteristics of the Nb{sub 3}Al strand. The advantages and disadvantages of the Nb{sub 3}Al cable are compared with the prevailing Nb{sub 3}Sn cable from the point of view of stress-strain, J{sub c}, and possible degradation of stabilizer due to cabling. The Nb{sub 3}Al coil of the magnet, which will be made by wind and react method, has to be heat treated at 800 degree C for 10 hours. As preparation for the 15 Tesla magnet, a series of tests on strand and Rutherford cables are considered.« less

Cable deformation simulation and a hierarchical framework for Nb3Sn Rutherford cables

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arbelaez, D.; Prestemon, S. O.; Ferracin, P.

2009-09-13

Knowledge of the three-dimensional strain state induced in the superconducting filaments due to loads on Rutherford cables is essential to analyze the performance of Nb{sub 3}Sn magnets. Due to the large range of length scales involved, we develop a hierarchical computational scheme that includes models at both the cable and strand levels. At the Rutherford cable level, where the strands are treated as a homogeneous medium, a three-dimensional computational model is developed to determine the deformed shape of the cable that can subsequently be used to determine the strain state under specified loading conditions, which may be of thermal, magnetic,more » and mechanical origins. The results can then be transferred to the model at the strand/macro-filament level for rod restack process (RRP) strands, where the geometric details of the strand are included. This hierarchical scheme can be used to estimate the three-dimensional strain state in the conductor as well as to determine the effective properties of the strands and cables from the properties of individual components. Examples of the modeling results obtained for the orthotropic mechanical properties of the Rutherford cables are presented.« less

Conversion and improvement of the Rutherford Laboratory's magnetostatic computer code GFUN3D to the NMFECC CDC 7600

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tucker, T.C.

1980-06-01

The implementation of a version of the Rutherford Laboratory's magnetostatic computer code GFUN3D on the CDC 7600 at the National Magnetic Fusion Energy Computer Center is reported. A new iteration technique that greatly increases the probability of convergence and reduces computation time by about 30% for calculations with nonlinear, ferromagnetic materials is included. The use of GFUN3D on the NMFE network is discussed, and suggestions for future work are presented. Appendix A consists of revisions to the GFUN3D User Guide (published by Rutherford Laboratory( that are necessary to use this version. Appendix B contains input and output for some samplemore » calculations. Appendix C is a detailed discussion of the old and new iteration techniques.« less

Retrieval of Ocean Subsurface Particulate Backscattering Coefficient from Space-Borne CALIOP Lidar Measurement

NASA Technical Reports Server (NTRS)

Lu, Xiaomei; Hu, Yongxiang; Pelon, Jacques; Trepte, Chip; Liu, Katie; Rodier, Sharon; Zeng, Shan; Luckher, Patricia; Verhappen, Ron; Wilson, Jamie;

Analysis of biological materials using a nuclear microprobe

NASA Astrophysics Data System (ADS)

Mulware, Stephen Juma

The use of nuclear microprobe techniques including: Particle induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) for elemental analysis and quantitative elemental imaging of biological samples is especially useful in biological and biomedical research because of its high sensitivity for physiologically important trace elements or toxic heavy metals. The nuclear microprobe of the Ion Beam Modification and Analysis Laboratory (IBMAL) has been used to study the enhancement in metal uptake of two different plants. The roots of corn (Zea mays) have been analyzed to study the enhancement of iron uptake by adding Fe (II) or Fe(III) of different concentrations to the germinating medium of the seeds. The Fe uptake enhancement effect produced by lacing the germinating medium with carbon nanotubes has also been investigated. The aim of this investigation is to ensure not only high crop yield but also Fe-rich food products especially from calcareous soil which covers 30% of world's agricultural land. The result will help reduce iron deficiency anemia, which has been identified as the leading nutritional disorder especially in developing countries by the World Health Organization. For the second plant, Mexican marigold (Tagetes erecta ), the effect of an arbuscular mycorrhizal fungi (Glomus intraradices ) for the improvement of lead phytoremediation of lead contaminated soil has been investigated. Phytoremediation provides an environmentally safe technique of removing toxic heavy metals (like lead), which can find their way into human food, from lands contaminated by human activities like mining or by natural disasters like earthquakes. The roots of Mexican marigold have been analyzed to study the role of arbuscular mycorrhizal fungi in enhancement of lead uptake from the contaminated rhizosphere.

In-Situ RBS Channelling Studies Of Ion Implanted Semiconductors And Insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wendler, E.

2011-06-01

The experimental set-up at the ion beam facility in Jena allows the performance of Rutherford backscattering spectrometry (RBS) in channeling configuration at any temperature between 15 K and room temperature without changing the environment or the temperature of the sample. Doing RBS channeling studies at 15 K increases the sensitivity to defects, because the influence of lattice vibrations is reduced. Thus, the very early processes of ion induced damage formation can be studied and the cross section of damage formation per ion in virgin material, P, can be determined. At 15 K ion-beam induced damage formation itself can be investigated,more » because the occurrence of thermal effects can be widely excluded. In AlAs, GaN, and ZnO the cross section P measured at 15 K can be used to estimate the displacement energy for the heavier component, which is in reasonable agreement with other experiments or theoretical calculations. For a given ion species (here Ar ions) the measured cross section P exhibits a quadratic dependence P{proportional_to}P{sub SRIM}{sup 2} with P{sub SRIM} being the value calculated with SRIM using established displacement energies from other sources. From these results the displacement energy of AlN can be estimated to about 40 eV. Applying the computer code DICADA to calculate the depth distribution of displaced lattice atoms from the channeling spectra, indirect information about the type of defects produced during ion implantation at 15 K can be obtained. In some materials like GaN or ZnO the results indicate the formation of extended defects most probably dislocation loops and thus suggest an athermal mobility of defect at 15 K.« less

"Rutherford's Experiment" on Alpha Particles Scattering: The Experiment That Never Was

ERIC Educational Resources Information Center

Leone, M.; Robotti, N.; Verna, G.

2018-01-01

The so-called "Rutherford's experiment," as it is outlined in many physics textbooks, is a case in point of the flaws around the history at the educational level of one of the decisive event of modern physics: the discovery that the atom has a nucleus. This paper shows that this alleged experiment is a very approximate and very partial…

Monitoring vegetation dynamics in the Amazon with RapidScat

NASA Astrophysics Data System (ADS)

van Emmerik, Tim; Steele-Dunne, Susan; Paget, Aaron C.; van de Giesen, Nick

2017-04-01

Several studies affiliated diurnal variations in radar backscatter over the Amazon [1,2] with vegetation water stress. Recent studies on tree and corn canopies [3,4] have demonstrated that during periods of low soil moisture availability, the total radar backscatter is primarily sensitive to changes in leaf water content, highlighting the potential of radar for water stress detection. The RapidScat mission (Ku-band, 13.4GHz), mounted on the International Space Station, observes the Earth in a non-sun-synchronous orbit [5]. This unique orbit allows for reconstructing diurnal cycles of radar backscatter. We hypothesize that the state of the canopy is a significant portion of the diurnal variations observed in the radar backscatter. Recent, yet inconclusive, analyses support the theory of the impact of vegetation water content on diurnal variation in RapidScat radar backscatter over the Amazon and Congo. Linking ground measurements of canopy dynamics to radar backscatter will allow further exploration of the possibilities for monitoring vegetation dynamics. Our presentation focuses of two parts. First, we reconstruct diurnal cycles of RapidScat backscatter over the Amazon, and study its variation over time. Second, we analyze the pre-dawn backscatter over time. The water content at this time of day is a measure of water stress, and might therefore be visible in the backscatter time series. References [1] Frolking, S., et al.: "Tropical forest backscatter anomaly evident in SeaWinds scatterometer morning overpass data during 2005 drought in Amazonia", Remote Sensing of Environment, 2011. [2] Jaruwatanadilok, S., and B. Stiles: "Trends and variation in Ku-band backscatter of natural targets on land observed in QuikSCAT data", IEEE Transactions on Geoscience and Remote Sensing , 2014. [3] Steele-Dunne, S., et al.: "Using diurnal variation in backscatter to detect vegetation water stress", IEEE Transactions on Geoscience and Remote Sensing, 2012. [4] van Emmerik, T., et al.: "Impact of diurnal variation in vegetation water content on radar backscatter from maize during water stress", IEEE Transactions on Geoscience and Remote Sensing, 2015. [5] Paget, A., et al.: "RapidScat Diurnal Cycles Over Land", IEEE Transactions on Geoscience and Remote Sensing, 2016.

Factors affecting primary patency of stenting for TransAtlantic Inter-Society (TASC II) type B, C, and D iliac occlusive disease.

PubMed

Kavaliauskienė, Zana; Benetis, Rimantas; Inčiūra, Donatas; Aleksynas, Nerijus; Kaupas, Rytis Stasys; Antuševas, Aleksandras

2014-01-01

The purpose of our study was to evaluate 1- and 2-year results and the influence of risk factors on the outcome in the patients undergoing iliac artery stenting for TASC II type B, C, and D iliac lesions. In this prospective nonrandomized study conducted between April 15, 2011, and April 15, 2013, 316 patients underwent angiography with a diagnosis of aortoiliac atherosclerotic disease. Of these, 62 iliac endovascular procedures (87 stents) were performed in 54 patients. The indications for revascularization were disabling claudication (Rutherford 2, 5.9%; Rutherford 3, 35.2%), rest pain (Rutherford 4, 22.2%), and gangrene (Rutherford 5, 16.7%). The overall complication rate was 9.2%. The cumulative primary stent patency at 1 and 2 years was 83.0%±5.2% and 79.9%±5.8%, respectively. Early stent thrombosis in ≤30 days was detected in two patients (3.7%). The primary patency rates for the stents ≤61mm at 12 and 24 months were 90.6%±4.5% and 86.6%±5.8%, respectively; those for the stents >61mm were 67.7%±10.9% and 60.2%±12.0%, respectively (P=0.016). The multivariate Cox regression analysis enabled the localization of a stent in both the CIA and the EIA (hazard ratio [HR], 3.3; 95% confidence interval [CI], 1.1-9.5; P=0.021) and poor runoff (HR, 3.2; 95%, CI 1.0-10.0; P=0.047) as independent predictors of decreased stent primary patency. The localization of a stent in both iliac (CIA and EIA) arteries and poor runoff significantly reduce the primary stent patency. Patients with stents >61mm have a higher risk of stent thrombosis or in-stent restenosis development. Copyright © 2014 Lithuanian University of Health Sciences. Production and hosting by Elsevier Urban & Partner Sp. z o.o. All rights reserved.

Assessing backscatter change due to backscatter gradient over the Greenland ice sheet using Envisat and SARAL altimetry

NASA Astrophysics Data System (ADS)

Su, Xiaoli; Luo, Zhicai; Zhou, Zebing

2018-06-01

Knowledge of backscatter change is important to accurately retrieve elevation change time series from satellite radar altimetry over continental ice sheets. Previously, backscatter coefficients generated in two cases, namely with and without accounting for backscatter gradient (BG), are used. However, the difference between backscatter time series obtained separately in these two cases and its impact on retrieving elevation change are not well known. Here we first compare the mean profiles of the Ku and Ka band backscatter over the Greenland ice sheet (GrIS), with results illustrating that the Ku-band backscatter is 3 ∼ 5 dB larger than that of the Ka band. We then conduct statistic analysis about time series of backscatter formed separately in the above two cases for both Ku and Ka bands over two regions in the GrIS. It is found that the standard deviation of backscatter time series becomes slightly smaller after removing the BG effect, which suggests that the method for the BG correction is effective. Furthermore, the impact on elevation change from backscatter change due to the BG effect is separately assessed for both Ku and Ka bands over the GrIS. We conclude that Ka band altimetry would benefit from a BG induced backscatter analysis (∼10% over region 2). This study may provide a reference to form backscatter time series towards refining elevation change time series from satellite radar altimetry over ice sheets using repeat-track analysis.

Correlation studies of passive and active microwave data in the marginal ice zone

NASA Technical Reports Server (NTRS)

Comiso, J. C.

1991-01-01

The microwave radiative and backscatter characteristics of sea ice in an Arctic marginal ice zone have been studied using near-simultaneous passive and active synthetic aperture radar microwave data. Intermediate-resolution multichannel passive microwave data were registered and analyzed. Passive and active microwave data generally complement each other as the two sensors are especially sensitive to different physical properties of the sea ice. In the inner pack, undeformed first-year ice is observed to have low backscatter values but high brightness temperatures while multiyear ice has generally high backscatter values and low brightness temperatures. However, in the marginal ice zone, the signature and backscatter for multiyear ice are considerably different and closer to those of first-year ice. Some floes identified by photography as snow-covered thick ice have backscatter similar to that of new ice or open water while brash ice has backscatter similar to or higher than that of ridged ice.

Analysis of the backscatter spectrum in an ionospheric modification experiment

NASA Technical Reports Server (NTRS)

Kim, H.; Crawford, F. W.; Harker, K. J.

1976-01-01

The purpose of this study is to compare predictions of the backscatter spectrum, including effects of ionospheric inhomogeneity, with experimental observations of incoherent backscatter from an artificially heated region. Our calculations show that the strongest backscatter echo received is not from the reflection level but from a region some distance below (about 900-1100 m for an experiment carried out at Arecibo). By taking the standing wave pattern of the pump properly into account the present theory explains certain asymmetrical features of the upshifted and downshifted plasma lines in the backscatter spectrum.

Design of the optical backscatter diagnostic for laser plasma interaction measurements on NIF

NASA Astrophysics Data System (ADS)

Moody, J. D.; Datte, P.; Ng, E.; Maitland, K.; Hsing, W.; MacGowan, B. J.; Froula, D. H.; Neumayer, P.; Sutter, L.; Meezan, N.; Glenzer, S. H.; Kirkwood, R. K.; Divol, L.; Andrews, S.; Jackson, J.; MacKinnon, A.; Jovanovic, I.; Beeler, R.; Bertolini, L.; Landon, M.; Alvarez, S.; Lee, T.; Watts, P.

2007-11-01

We describe the design of the backscatter diagnostic for NIF laser-plasma interaction (LPI) studies. It will initially be used to validate the 280 eV point design hohlraum and select phase plates for the ignition experiments. Backscatter measurements are planned for two separate groups of 4 beams (a quad). One quad is 30^o from the hohlraum axis and the other at 50^o. The backscatter measurement utilizes 2 instruments for each beam quad. The full aperture backscatter system (FABS) measures light backscattered into the final focus lens of each beam in the quad. The near backscatter imager (NBI) measures light backscattered outside of the beam quad. Both instruments must work in conjunction to provide spectrally and temporally resolved backscatter power. We describe the design of the diagnostic and its capabilities as well as plans for calibrating it and analyzing the resulting data. This work was performed under the auspices of the U.S. Department of Energy by University of California, Lawrence Livermore National Laboratory under Contract W-7405-Eng-48.

Anomalous behavior of B{sub 1g} mode in highly transparent anatase nano-crystalline Nb-doped Titanium Dioxide (NTO) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gautam, Subodh K., E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com; Ojha, S.; Singh, Fouran, E-mail: subodhkgtm@gmail.com, E-mail: fouran@gmail.com

2015-12-15

The effect of Niobium doping and size of crystallites on highly transparent nano-crystalline Niobium doped Titanium Dioxide (NTO) thin films with stable anatase phase are reported. The Nb doping concentration is varied within the solubility limit in TiO{sub 2} lattice. Films were annealed in controlled environment for improving the crystallinity and size of crystallites. Elemental and thickness analysis were carried out using Rutherford backscattering spectrometry and cross sectional field emission scanning electron microscopy. Structural characteristics reveal a substitutional incorporation of Nb{sup +5} in the TiO{sub 2} lattice which inhibits the anatase crystallites growth with increasing the doping percentage. The micro-Ramanmore » (MR) spectra of films with small size crystallites shows stiffening of about 4 cm{sup −1} for the E{sub g(1)} mode and is ascribed to phonon confinement and non-stoichiometry. In contrast, B{sub 1g} mode exhibits a large anomalous softening of 20 cm{sup −1} with asymmetrical broadening; which was not reported for the case of pure TiO{sub 2} crystallites. This anomalous behaviour is explained by contraction of the apical Ti-O bonds at the surface upon substitutional Nb{sup 5+} doping induced reduction of Ti{sup 4+} ions also known as hetero-coordination effect. The proposed hypotheses is manifested through studying the electronic structure and phonon dynamics by performing the near edge x-ray absorption fine structure (NEXAFS) and temperature dependent MR down to liquid nitrogen temperature on pure and 2.5 at.% doped NTO films, respectively.« less

Effect of concentration and irradiation on the optical and structural properties of ZnO thin films deposited by spray pyrolysis techniques

NASA Astrophysics Data System (ADS)

Adeoye Victor, Babalola

2017-12-01

This study involves the preparation of ZnO thin films by spray pyrolysis and to investigate the effect of concentration of the film and irradiation on ZnO thin film deposited by spray pyrolysis method deposited at 350 ± 5 °C. The precursor for zinc oxide was produced from zinc acetate (Zn(CH3COO))2. The samples were annealed at 500 °C for 6 h and irradiated using 137Cs 90.998 mCi radiation. They were then characterised using ultra violet-visible spectrophotometry, X-ray Diffractometry (XRD) with Cu-Kα radiation to determine the structure of the film, Four-point probe for electrical properties and Rutherford Backscattering Spectrometry (RBS) were used for the composition of the film. XRD diffraction peaks observed for 0.05 M ZnO were (1 0 0), (0 0 2), (1 0 1) and (1 1 0) planes for the annealed and irradiated annealed ZnO films with no preferential orientation. The as-deposited films have low peaks belonging to (1 0 0), (0 0 2), (1 0 1), (1 1 0) plane and other peaks such as (1 1 2), (2 0 0) and (2 0 1). The results are explained with regard to the irradiation damage introduced to the samples. The as-deposited, annealed and irradiated-annealed films are highly transparent in the visible range of the electromagnetic spectrum with an average percent transmittance values of 85% and present a sharp ultraviolet cut-off at approximately 380 nm for the ZnO thin film.

Effect of Thickness on the Structural, Microstructural, Electrical and Magnetic Properties of ni Films Elaborated by Pulsed Electrodeposition on si Substrate

NASA Astrophysics Data System (ADS)

Kacel, T.; Guittoum, A.; Hemmous, M.; Dirican, E.; Öksüzoglu, R. M.; Azizi, A.; Laggoun, A.; Zergoug, M.

We have studied the effect of thickness on the structural, microstructural, electrical and magnetic properties of Ni films electrodeposited onto n-Si (100) substrates. A series of Ni films have been prepared for different potentials ranging from -1.6V to -2.6V. Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), four point probe technique, atomic force microscopy (AFM) and vibrating sample magnetometry (VSM) have been used to investigate the physical properties of elaborated Ni thin films. From the analysis of RBS spectra, we have extracted the films thickness t (t ranges from 83nm to 422nm). We found that the Ni thickness, t (nm), linearly increases with the applied potential. The Ni thin films are polycrystalline and grow with the 〈111〉 texture. The lattice parameter a (Å) monotonously decreases with increasing thickness. However, a positive strain was noted indicating that all the samples are subjected to a tensile stress. The mean grain sizes D (nm) and the strain ɛhkl decrease with increasing thickness. The electrical resistivity ρ (μΩ.cm) increases with t for t less than 328nm. The diffusion at the grain boundaries may be the important factor in the electrical resistivity. From AFM images, we have shown that the Ni surface roughness decreases with increasing thickness. The coercive field HC, the squareness factor S, the saturation field HS and the effective anisotropy constant K1eff are investigated as a function of Ni thickness and grain sizes. The correlation between the magnetic and the structural properties is discussed.

A coupled effect of nuclear and electronic energy loss on ion irradiation damage in lithium niobate

DOE PAGES

Liu, Peng; Zhang, Yanwen; Xue, Haizhou; ...

2016-01-09

Understanding irradiation effects induced by elastic energy loss to atomic nuclei and inelastic energy loss to electrons in a crystal, as well as the coupled effect between them, is a scientific challenge. Damage evolution in LiNbO 3 irradiated by 0.9 and 21 MeV Si ions at 300 K has been studied utilizing Rutherford backscattering spectrometry in channeling mode. During the low-energy ion irradiation process, damage accumulation produced due to elastic collisions is described utilizing a disorder accumulation model. Moreover, low electronic energy loss is shown to induce observable damage that increases with ion fluence. For the same electronic energy loss,more » the velocity of the incident ion could affect the energy and spatial distribution of excited electrons, and therefore effectively modify the diameter of the ion track. Furthermore, nonlinear additive phenomenon of irradiation damage induced by high electronic energy loss in pre-damaged LiNbO 3 has been observed. The result indicates that pre-existing damage induced from nuclear energy loss interacts synergistically with inelastic electronic energy loss to promote the formation of amorphous tracks and lead to rapid phase transformation, much more efficient than what is observed in pristine crystal solely induced by electronic energy loss. As a result, this synergistic effect is attributed to the fundamental mechanism that the defects produced by the elastic collisions result in a decrease in thermal conductivity, increase in the electron-phonon coupling, and further lead to higher intensity in thermal spike from intense electronic energy deposition along high-energy ion trajectory.« less

Nanopatterning dynamics on Si(100) during oblique 40-keV Ar+ erosion with metal codeposition: Morphological and compositional correlation

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Gago, R.; Palomares, F. J.; Mücklich, A.; Vinnichenko, M.; Vázquez, L.

2012-08-01

The formation and dynamics of nanopatterns produced on Si(100) surfaces by 40-keV Ar+ oblique (α = 60°) bombardment with concurrent Fe codeposition have been studied. Morphological and chemical analysis has been performed by ex situ atomic force microscopy, Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and scanning and transmission electron microscopies. During irradiation, Fe atoms incorporated into the target surface react with Si to form silicides, a process enhanced at this medium-ion energy range. The silicides segregate at the nanoscale from the early irradiation stages. As the irradiation proceeds, a ripple pattern is formed without any correlation with silicide segregation. From the comparison with the pattern dynamics reported previously for metal-free conditions, it is demonstrated that the metal incorporation alters both the pattern dynamics and the morphology. Although the pattern formation and dynamics are delayed for decreasing metal content, once ripples emerge, the same qualitative pattern of morphological evolution is observed for different metal content, resulting in an asymptotic saw-tooth-like facetted surface pattern. Despite the medium ion energy employed, the nanopatterning process with concurrent Fe deposition can be explained by those mechanisms proposed for low-ion energy irradiations such as shadowing, height fluctuations, silicide formation and segregation, ensuing composition dependent sputter rate, and ion sculpting effects. In particular, the interplay between the ion irradiation and metal flux geometries, differences in sputtering rates, and the surface pattern morphology produces a dynamic compositional patterning correlated with the evolving morphological one.

Investigation of the optimal backscatter for an aSi electronic portal imaging device.

PubMed

Ko, Lung; Kim, Jong Oh; Siebers, Jeffrey V

2004-05-07

The effects of backscattered radiation on the dosimetric response of the Varian aS500 amorphous silicon electronic portal imaging device (EPID) are studied. Measurements demonstrate that radiation backscattered from the EPID mechanical support structure causes 5% asymmetries in the detected signal. To minimize the effect of backscattered radiation from the support structure, this work proposes adding material downstream of the EPID phosphor which provides uniform backscattering material to the phosphor and attenuates backscatter from the support structure before it reaches the phosphor. Two material locations were studied: downstream of the existing image cassette and within the cassette, immediately downstream of the flat-panel imager glass panel. Monte Carlo simulations were used to determine the thicknesses of water, Pb and Cu backscattering materials required to saturate the backscattered signal response for 6 MV and 18 MV beams for material thicknesses up to 50 mm. Water was unable to saturate the backscattered signal for thicknesses up to 50 mm for both energies. For Pb, to obtain a signal within 1% of saturation, 3 mm was required at 6 MV, and 6.8 mm was required at 18 MV. For Cu, thicknesses of 20.6 mm and 22.6 mm were required for the 6 MV and 18 MV beams, respectively. For saturation thicknesses, at 6 MV, the Cu backscatter enhanced the signal more than for Pb (Cu 1.25, Pb 1.11), but at 18 MV the reverse was found (Cu 1.19, Pb 1.23). This is due to the fact that at 6 MV, the backscattered radiation signal is dominated by low-energy scattered photons, which are readily attenuated by the Pb, while at 18 MV, electron backscatter contributes substantially to the signal. Image blurring caused by backscatter spread was less for Pb than Cu. Placing Pb immediately downstream of the glass panel further reduced the signal spread and increased the backscatter enhancement to 1.20 and 1.39 for the 6 MV and 18 MV beams, respectively. Overall, it is determined that adding approximately 5 mm of Pb between the detector and the mechanical support structure will substantially reduce the nonuniformity in the backscattered signals for 6 MV and 18 MV photon beams.

Ion beams provided by small accelerators for material synthesis and characterization

NASA Astrophysics Data System (ADS)

Mackova, Anna; Havranek, Vladimir

2017-06-01

The compact, multipurpose electrostatic tandem accelerators are extensively used for production of ion beams with energies in the range from 400 keV to 24 MeV of almost all elements of the periodic system for the trace element analysis by means of nuclear analytical methods. The ion beams produced by small accelerators have a broad application, mainly for material characterization (Rutherford Back-Scattering spectrometry, Particle Induced X ray Emission analysis, Nuclear Reaction Analysis and Ion-Microprobe with 1 μm lateral resolution among others) and for high-energy implantation. Material research belongs to traditionally progressive fields of technology. Due to the continuous miniaturization, the underlying structures are far beyond the analytical limits of the most conventional methods. Ion Beam Analysis (IBA) techniques provide this possibility as they use probes of similar or much smaller dimensions (particles, radiation). Ion beams can be used for the synthesis of new progressive functional nanomaterials for optics, electronics and other applications. Ion beams are extensively used in studies of the fundamental energetic ion interaction with matter as well as in the novel nanostructure synthesis using ion beam irradiation in various amorphous and crystalline materials in order to get structures with extraordinary functional properties. IBA methods serve for investigation of materials coming from material research, industry, micro- and nano-technology, electronics, optics and laser technology, chemical, biological and environmental investigation in general. Main research directions in laboratories employing small accelerators are also the preparation and characterization of micro- and nano-structured materials which are of interest for basic and oriented research in material science, and various studies of biological, geological, environmental and cultural heritage artefacts are provided too.

Metal-semiconductor phase transition of order arrays of VO2 nanocrystals

NASA Astrophysics Data System (ADS)

Lopez, Rene; Suh, Jae; Feldman, Leonard; Haglund, Richard

2004-03-01

The study of solid-state phase transitions at nanometer length scales provides new insights into the effects of material size on the mechanisms of structural transformations. Such research also opens the door to new applications, either because materials properties are modified as a function of particle size, or because the nanoparticles interact with a surrounding matrix material, or with each other. In this paper, we describe the formation of vanadium dioxide nanoparticles in silicon substrates by pulsed laser deposition of ion beam lithographically selected sites and thermal processing. We observe the collective behavior of 50 nm diameter VO2 oblate nanoparticles, 10 nm high, and ordered in square arrays with arbitrary lattice constant. The metal-semiconductor-transition of the VO2 precipitates shows different features in each lattice spacing substrate. The materials are characterized by electron microscopy, x-ray diffraction, Rutherford backscattering. The features of the phase transition are studied via infrared optical spectroscopy. Of particular interest are the enhanced scattering and the surface plasmon resonance when the particles reach the metallic state. This resonance amplifies the optical contrast in the range of near-infrared optical communication wavelengths and it is altered by the particle-particle coupling as in the case of noble metals. In addition the VO2 nanoparticles exhibit sharp transitions with up to 50 K of hysteresis, one of the largest values ever reported for this transition. The optical properties of the VO2 nanoarrays are correlated with the size of the precipitates and their inter-particle distance. Nonlinear and ultra fast optical measurements have shown that the transition is the fastest known solid-solid transformation. The VO2 nanoparticles show the same bulk property, transforming in times shorter than 150 fs. This makes them remarkable candidates for ultrafast optical and electronic switching applications.

Study on swift heavy ions induced modifications of Ag-ZnO nanocomposite thin film

NASA Astrophysics Data System (ADS)

Singh, S. K.; Singhal, R.; Siva Kumar, V. V.

2017-03-01

In the present work, swift heavy ion (SHI) irradiation induced modifications in structural and optical properties of Ag-ZnO nanocomposite thin films have been investigated. Ag-ZnO nanocomposite (NCs) thin films were synthesized by RF magnetron sputtering technique and irradiated with 100 MeV Ag7+ ions at three different fluences 3 × 1012, 1 × 1013 and 3 × 1013 ions/cm2. Rutherford Backscattering Spectrometry revealed Ag concentration to be ∼8.0 at.%, and measured thickness of the films was ∼55 nm. Structural properties of pristine and irradiated films have been analyzed by X-ray diffraction analysis and found that variation in crystallite size of the film with ion irradiation. X-ray photoelectron spectroscopy (XPS) indicates the formation of Ag-ZnO nanocomposite thin film with presence of Ag, Zn and O elements. Oxidation state of Ag and Zn also estimated by XPS analysis. Surface plasmon resonance (SPR) of Ag nanoparticle has appeared at ∼475 nm in the pristine thin film, which is blue shifted by ∼30 nm in film irradiated at fluence of 3 × 1012 ions/cm2 and completely disappeared in film irradiated at higher fluences, 1 × 1013 and 3 × 1013 ions/cm2. A marginal change in the optical band gap of Ag-ZnO nanocomposite thin film is also found with increasing ion fluence. Surface morphology of pristine and irradiated films have been studied using Atomic Force Microscopy (AFM). Raman and Photo-luminance (PL) spectra of nanocomposite thin films have been investigated to understand the ion induced modifications such as lattice defects and disordering in the nanocomposite thin film.

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Limin, E-mail: zhanglm@lzu.edu.cn; Peng, Jinxin; Ai, Wensi

2016-06-28

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrastmore » to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.« less

Epitaxial Fe/Y2O3 interfaces as a model system for oxide-dispersion-strengthened ferritic alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Bowden, Mark E.; Wang, Chong M.

2015-02-01

The fundamental mechanisms underlying the superior radiation tolerance properties of oxide-dispersion-strengthened ferritic steels and nanostructured ferritic alloys are poorly understood. Thin film heterostructures of Fe/Y2O3 can serve as a model system for fundamental studies of radiation damage. Epitaxial thin films of Y2O3 were deposited by pulsed laser deposition on 8% Y:ZrO2 (YSZ) substrates with (100), (110), and (111) orientation. Metallic Fe was subsequently deposited by molecular beam epitaxy. Characterization by x-ray diffraction and Rutherford backscattering spectrometry in the channeling geometry revealed a degree of epitaxial or axiotaxial ntation for Fe(211) deposited on Y2O3(110)/YSZ(110). In contrast, Fe on Y2O3(111)/YSZ(111) was fullymore » polycrystalline, and Fe on Y2O3(100)/YSZ(100) exhibited out-of-plane texture in the [110] direction with little or no preferential in-plane orientation. Scanning transmission electron microscopy imaging of Fe(211)/Y2O3(110)/YSZ(110) revealed a strongly islanded morphology for the Fe film, with no epitaxial grains visible in the cross-sectional sample. Well-ordered Fe grains with no orientation to the underlying Y2O3 were observed. Well-ordered crystallites of Fe with both epitaxial and non-epitaxial orientations on Y2O3 are a promising model system for fundamental studies of radiation damage phenomena. This is illustrated with preliminary results of He bubble formation following implantation with a helium ion microscope. He bubble formation is shown to preferentially occur at the Fe/Y2O3 interface.« less

Cation non-stoichiometry in pulsed laser deposited Sr{sub 2+y}Fe{sub 1+x}Mo{sub 1-x}O₆ epitaxial films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meyer, T. L.; Woodward, P. M., E-mail: woodward.55@osu.edu; Dixit, M.

2014-07-07

Sr₂FeMoO₆ (SFMO) films were grown on SrTiO₃ (100)- and (111)-oriented substrates via pulsed laser deposition (PLD). In order to study the fundamental characteristics of deposition, films were grown in two different PLD chambers. In chamber I, the best films were grown with a relatively long substrate-to-target distance (89 mm), high substrate temperature (850 °C), and low pressure (50 mTorr) in a 95% Ar/5% H₂ atmosphere. Although X-ray diffraction (XRD) measurements indicate these films are single phase, Rutherford Backscattering (RBS) measurements reveal considerable non-stoichiometry, corresponding to a Sr₂Fe{sub 1–x}Mo{sub 1+x}O₆ composition with x≅0.2–0.3. This level of non-stoichiometry results in inferior magneticmore » properties. In chamber II, the best films were grown with a much shorter substrate-to-target distance (38 mm), lower temperature (680 °C), and higher pressure (225 mTorr). XRD measurements show that the films are single phase, and RBS measurements indicate that they are nearly stoichiometric. The degree of ordering between Fe and Mo was dependent on both the temperature and pressure used during deposition, reaching a maximum order parameter of 85%. The saturation magnetization increases as the Fe/Mo ordering increases, reaching a maximum of 2.4 μ B/f.u. Based on prior studies of bulk samples, one would expect a higher saturation magnetization for this degree of Fe/Mo order. The presence of extra strontium oxide layers in the form of Ruddlesden-Popper intergrowths appears to be responsible for the lower than expected saturation magnetization of these films.« less

Combined effect of Pt and W alloying elements on Ni-silicide formation

NASA Astrophysics Data System (ADS)

Luo, T.; Mangelinck, D.; Descoins, M.; Bertoglio, M.; Mouaici, N.; Hallén, A.; Girardeaux, C.

2018-03-01

A combinatorial study of the combined effect of Pt and W on Ni silicide formation is performed. Ni(Pt, W) films with thickness and composition gradients were prepared by a co-deposition composition spread technique using sputtering deposition from Pt, W, and Ni targets. The deposited Ni(Pt,W) films were characterized by X-ray diffraction, X-ray reflectivity, Rutherford backscattering, and atom probe tomography. The maximum content of alloying elements is close to 27 at. %. Simulations of the thickness and composition were carried out and compared with experimental results. In situ X-ray diffraction and atom probe tomography were used to study the phase formation. Both additive alloying elements (Pt + W) slow down the Ni consumption and the effect of W is more pronounced than the one of Pt. Regarding the effect of alloying elements on Ni silicides formation, three regions could be distinguished in the Ni(Pt,W)/Si wafer. For the region close to the Ni target, the low contents of alloying elements (Pt + W) have little impact on the phase sequence (δ-Ni2Si is the first silicide and NiSi forms when Ni is entirely consumed) but the kinetics of silicide formation slows down. The region close to the Pt target has high contents of (Pt + W) and is rich in Pt and a simultaneous phase formation of δ-Ni2Si and NiSi is observed. For the high (Pt + W) contents and W-rich region, NiSi forms unexpectedly before δ-Ni2Si and the subsequent growth of δ-Ni2Si is accompanied by the NiSi consumption. When Ni is entirely consumed, NiSi regrows at the expense of δ-Ni2Si.

Mg2Sn heterostructures on Si(111) substrate

NASA Astrophysics Data System (ADS)

Dózsa, L.; Galkin, N. G.; Pécz, B.; Osváth, Z.; Zolnai, Zs.; Németh, A.; Galkin, K. N.; Chernev, I. M.; Dotsenko, S. A.

2017-05-01

Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg2Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg2Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg2Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg2Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg2Sn layer. The measurements indicate the necessity of protective layer grown over the Mg2Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

Radiation damage in Tb-implanted CaF 2 observed by channeling and luminescence measurements

NASA Astrophysics Data System (ADS)

Aono, K.; Kumagai, M.; Iwaki, M.; Aoyagi, Y.; Namba, S.

1993-06-01

The effects of 100 keV Tb ion implantation in CaF 2 single crystals have been investigated using Rutherford backscattering/channeling technique and luminescence spectra during ion implantation, depending on ion doses. Terbium ions were implanted into (111)-cut CaF 2 single crystals in random directions with doses ranging from 1 × 10 13 to 1 × 10 17 Tb +/cm 2 at -100°C, 25°C and 100°C. The luminescence signals were measured by 100 keV Ar ion beam irradiation at room temperature to Tb-implanted specimens in order to detect the ionic state of Tb. Two broad emission peaks (near 380 and 545 nm) in visible regions were observed, originating from Tb 3+ in CaF 2. The same luminescence was also observed even during Tb implantation to CaF 2. The luminescence near 380 nm is identified as an emission of 5D 3→ 7F 6 and that near 545 nm is 5D 4→ 7F 5. The emission peak intensities depend on ion dose. Channeling measurements suggest that most of the Tb atoms occupy substitutional lattice sites. Intensities of luminescence and Tb depth profiles depend on the target temperature. In conclusion, implanted Tb atoms occupy Ca lattice sites and emit green luminescence light.

Atom penetration from a thin film into the substrate during sputtering by polyenergetic Ar{sup +} ion beam with mean energy of 9.4 keV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kalin, B.A.; Gladkov, V.P.; Volkov, N.V.

Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar{sup +} ion bombardment of samples having thermally evaporated films of 30--50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar{sup +} ions of 9.4 keV to dose D = 1 {times} 10{sup 16}--10{sup 19} ion/cm{sup 2}. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H{sup +} and He{sup +} ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases withmore » dose linearly. This depth is more than 3--20 times deeper than the projected range of bombarding ions and recoil atoms. This is a deep action effect. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r{sub i}/r{sub m} (r{sub i} -- radius of dopant, r{sub m} -- radius target of substrate) can play a principal determining role.« less

RBS, SY-XRF, INAA and ICP-IDMS of antimony implanted in silicon - A multi-method approach to characterize and certify a reference material

NASA Astrophysics Data System (ADS)

Ecker, K. H.; Wätjen, U.; Berger, A.; Persson, L.; Pritzkow, W.; Radtke, M.; Riesemeier, H.

2002-04-01

A layer of Sb atoms, implanted with an energy of 400 keV and a nominal dose of 5×10 16 atoms/cm 2 into a high purity silicon wafer, was certified for its areal density (atoms/cm 2) using Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA) and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) and for its isotope ratio using INAA and ICP-IDMS. Excellent agreement between the results of the different independent methods was found. In the present work, the measurements of the homogeneity of the areal density of Sb, previously determined with RBS in spots having 1 mm diameter, are improved with synchrotron X-ray fluorescence analysis: Higher precision in even smaller sample spots allows to estimate a reduced inhomogeneity of the whole batch of samples of the order of only 0.4%. Thus the uncertainty of the certified value can further be reduced. Down to fractions of a chip with 0.3×0.4 mm 2 area, the areal density is now certified as (4.81±0.06)×10 16 Sb atoms/cm 2, where the expanded uncertainty 0.06 (coverage factor k=2) corresponds to only 1.2%. The relative merits of the different analytical methods are discussed.

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

Phase separations of amorphous CoW films during oxidation and reactions with Si and Al

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, S.Q.; Mayer, J.W.

1989-03-01

Reactions of thin Co/sub 55/ W/sub 45/ films in contact with Si(100) substrates and aluminum overlayers annealed in vacuum in the temperature ranges of 625--700 /sup 0/C and 500--600 /sup 0/C, respectively, and of thin Co/sub 55/W/sub 45/ films in air from 500 to 600 /sup 0/C were investigated by Rutherford backscattering spectrometry, glancing angle x-ray diffraction, and scanning electron microscope techniques. CoW alloy films were amorphous and have a crystallization temperature of 850 /sup 0/C on SiO/sub 2/ substrates. The compound formed is Co/sub 7/ W/sub 6/. Phase separations were found in all the reactions. A layer of cobaltmore » compounds (CoSi/sub 2/ in Si/CoW, Co/sub 2/ Al/sub 9/ in CoW/Al, and Co/sub 3/ O/sub 4/ in CoW with air) was found to form at the reaction interfaces. In addition, a layer of mainly tungsten compounds (WSi/sub 2/ in Si/CoW, WAl/sub 12/ in CoW/Al, and WO/sub 3/ in CoW with air) was found next to cobalt compound layers, but further away from the reaction interfaces. The reactions started at temperatures comparable to those required for the formation of corresponding tungsten compounds.« less

Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO•7Al2O3

NASA Astrophysics Data System (ADS)

Miyakawa, Masashi; Kamioka, Hayato; Hirano, Masahiro; Kamiya, Toshio; Sushko, Peter V.; Shluger, Alexander L.; Matsunami, Noriaki; Hosono, Hideo

2006-05-01

Implantation of Au+ ions into a single crystalline 12CaO•7Al2O3 (C12A7) was performed at high temperatures with fluences from 1×1014 to 3×1016cm-2 . This material is composed of positively charged sub-nanometer-sized cages compensated by extra-framework negatively charged species. The depth profile of concentrations of Au species was analyzed using Rutherford backscattering spectrometry. The measured optical spectra and ab initio embedded cluster calculations show that the implanted Au species are stabilized in the form of negative Au- ions below the fluences of ˜1×1016cm-2 (Au volume concentration of ˜2×1021cm-3 ). These ions are trapped in the cages and exhibit photoluminescence (PL) bands peaking at 3.05 and 2.34eV at temperatures below 150K . At fluences exceeding ˜3×1016cm-2 , the implanted Au atoms form nano-sized clusters. This is manifested in quenching of the PL bands and creation of an optical absorption band at 2.43eV due to the surface plasmon of free carriers in the cluster. The PL bands are attributed to the charge transfer transitions (Au0+e-→Au-) due to recombination of photo-excited electrons (e-) , transiently transferred by ultraviolet excitation into a nearby cages, with Au0 atoms.

Deposition Profile Analysis from DIII-D Metal Rings Campaign Outer-Midplane Collector Probe Diagnostic and Utilization of Enriched Isotopic Tungsten Tracer Particles

NASA Astrophysics Data System (ADS)

Donovan, D. C.; Duran, J.; Zamperini, S.; Lee, S.; Unterberg, E. A.; Wampler, W. R.; Rudakov, D. L.; Elder, D.; Stangeby, P. C.; Abrams, T.

2017-10-01

The DIII-D Metal Rings Campaign used isotopically-enriched, W-coated divertor tiles coupled with dual-facing midplane collector probes (CPs) in the far Scrape-off Layer (SOL). Inductively Coupled Plasma Mass Spectroscopy (ICP-MS) results are presented characterizing the isotopic ratios of deposited W on the CPs and which give quantitative information on the transport of W from specific poloidal locations within the lower outer divertor region having different isotopically-marked tiles. Rutherford Backscattering Spectrometry (RBS) of these CPs has provided areal densities of elemental W content. These resultant W deposition profiles were compared with DIVIMP modelling of the far-SOL to better understand impurity transport in the edge plasma. CPs were exposed for 37 distinct operating configurations (L-mode/H-mode, forward/reverse Bt, strikepoint position). Radial decay lengths (RDL) between 5 and 50 mm were observed with consistently narrower RDL and higher peak W content on the side of the probes connected along field lines to the inner divertor, indicating a concentration of W in the upstream plasma. Correlations are discussed between peak W content, RDL, and isotopic profiles on the CPs over a wide range of conditions. Work supported by US DOE under DE-AC05-00OR22725, DE-FG02-07ER54917, DE-FC02-04ER54698, DE-NA0003525.

Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin

2017-05-01

Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. The mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La2Zr2O7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr+ at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, the surface of the La2Zr2O7 filmmore » amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La2Zr2O7, the bandgap of a thick La2Zr2O7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

The electronic stopping powers and angular energy-loss dependence of helium and lithium ions in the silicon crystal

NASA Astrophysics Data System (ADS)

Mikšová, R.; Macková, A.; Malinský, P.

2017-09-01

We have measured the electronic stopping powers of helium and lithium ions in the channelling direction of the Si〈1 0 0〉 crystal. The energy range used (2.0-8.0 MeV) was changed by 200 and 400-keV steps. The ratio α between the channelling and random stopping powers was determined as a function of the angle for 2, 3 and 4 MeV 4He+ ions and for 3 and 6 MeV 7Li+,2+ ions. The measurements were carried out using the Rutherford backscattering spectrometry in the channelling mode (RBS-C) in a silicon-on-insulator material. The experimental channelling stopping-power values measured in the channelling direction were then discussed in the frame of the random energy stopping predictions calculated using SRIM-2013 code and the theoretical unitary convolution approximation (UCA) model. The experimental channelling stopping-power values decrease with increasing ion energy. The stopping-power difference between channelled and randomly moving ions increases with the enhanced initial ion energy. The ratio between the channelling and random ion stopping powers α as a function of the ion beam incoming angle for 2, 3 and 4 MeV He+ ions and for 3 and 6 MeV Li+,2+ ions was observed in the range 0.5-1.

Contribution of ICP-IDMS to the certification of antimony implanted in a silicon wafer--comparison with RBS and INAA results.

PubMed

Pritzkow, W; Vogl, J; Berger, A; Ecker, K; Grötzschel, R; Klingbeil, P; Persson, L; Riebe, G; Wätjen, U

2001-11-01

A thin-layer reference material for surface and near-surface analytical methods was produced and certified. The surface density of the implanted Sb layer was determined by Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA), and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) equipped with a multi-collector. The isotopic abundances of Sb (121Sb and 123Sb) were determined by multi-collector ICP-MS and INAA. ICP-IDMS measurements are discussed in detail in this paper. All methods produced values traceable to the SI and are accompanied by a complete uncertainty budget. The homogeneity of the material was measured with RBS. From these measurements the standard uncertainty due to possible inhomogeneities was estimated to be less than 0.78% for fractions of the area increments down to 0.75 mm2 in size. Excellent agreement between the results of the three different methods was found. For the surface density of implanted Sb atoms the unweighted mean value of the means of four data sets is 4.81 x 10(16) cm(-2) with an expanded uncertainty (coverage factor k = 2) of 0.09 x 10(16) cm(-2). For the isotope amount ratio R (121Sb/123Sb) the unweighted mean value of the means of two data sets is 1.435 with an expanded uncertainty (coverage factor k = 2) of 0.006.

Ti1-xSnxO2 nanofilms: Layer-by-layer deposition with extended Sn solubility and characterization

NASA Astrophysics Data System (ADS)

Yong, Zhihua; Linghu, Jiajun; Xi, Shibo; Tan, Hui Ru; Shen, Lei; Yang, Ping; Hui, Hui Kim; Cao, Jian Qing; Leek, Meng Lee; Yin, Xinmao; Feng, Yuan Ping; Pan, Jisheng

2018-01-01

High quality rutile Ti1-xSnxO2 nanofilms were successfully grown in a layer-by-layer mode at a moderately low temperature of 400 °C using pulsed laser deposition (PLD). High solid solubility of up to x = 0.216 has been achieved in the Ti1-xSnxO2 films despite theoretical prediction by Density functional theory (DFT) of large formation energy (∼5.64 eV) required for the substitutional alloy to exist at such high Sn concentration. The resultant films have smooth interfaces and step-terraced surfaces with well controlled stoichiometry and are optically transparent. Sn L3-edge Extended X-ray absorption fine structure (EXAFS) reveals the substitution of Sn4+ in the Ti4+ lattice sites of TiO2. The lattice spacing along [110] increases linearly with increment in x due to substitution of Sn4+ ions in the Ti lattice sites of the Ti1-xSnxO2 films. X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering (RBS) show that Sn is uniformly distributed on the surface and in the bulk of the films. These results are crucial when considering Ti1-xSnxO2 with suitable composition for making TiO2 based quantum structures in advanced optoelectronic devices and solar energy materials, where high-quality crystalline thin film-substrates are important.

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE PAGES

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2017-11-15

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Target dependent femtosecond laser plasma implantation dynamics in enabling silica for high density erbium doping

PubMed Central

Chandrappan, Jayakrishnan; Murray, Matthew; Kakkar, Tarun; Petrik, Peter; Agocs, Emil; Zolnai, Zsolt; Steenson, D.P.; Jha, Animesh; Jose, Gin

2015-01-01

Chemical dissimilarity of tellurium oxide with silica glass increases phase separation and crystallization tendency when mixed and melted for making a glass. We report a novel technique for incorporating an Er3+-doped tellurite glass composition into silica substrates through a femtosecond (fs) laser generated plasma assisted process. The engineered material consequently exhibits the spectroscopic properties of Er3+-ions, which are unachievable in pure silica and implies this as an ideal material for integrated photonics platforms. Formation of a well-defined metastable and homogeneous glass structure with Er3+-ions in a silica network, modified with tellurite has been characterized using high-resolution cross-sectional transmission electron microscopy (HRTEM). The chemical and structural analyses using HRTEM, Rutherford backscattering spectrometry (RBS) and laser excitation techniques, confirm that such fs-laser plasma implanted glasses may be engineered for significantly higher concentration of Er3+-ions without clustering, validated by the record high lifetime-density product 0.96 × 1019 s.cm−3. Characterization of planar optical layers and photoluminescence emission spectra were undertaken to determine their thickness, refractive indices and photoluminescence properties, as a function of Er3+ concentration via different target glasses. The increased Er3+ content in the target glass enhance the refractive index and photoluminescence intensity of the modified silica layer whilst the lifetime and thickness decrease. PMID:26370060

Dielectric and ferroelectric properties of strain-relieved epitaxial lead-free KNN-LT-LS ferroelectric thin films on SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Abazari, M.; Akdoǧan, E. K.; Safari, A.

2008-05-01

We report the growth of single-phase (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films on SrRuO3 coated ⟨001⟩ oriented SrTiO3 substrates by using pulsed laser deposition. Films grown at 600°C under low laser fluence exhibit a ⟨001⟩ textured columnar grained nanostructure, which coalesce with increasing deposition temperature, leading to a uniform fully epitaxial highly stoichiometric film at 750°C. However, films deposited at lower temperatures exhibit compositional fluctuations as verified by Rutherford backscattering spectroscopy. The epitaxial films of 400-600nm thickness have a room temperature relative permittivity of ˜750 and a loss tangent of ˜6% at 1kHz. The room temperature remnant polarization of the films is 4μC /cm2, while the saturation polarization is 7.1μC/cm2 at 24kV/cm and the coercive field is ˜7.3kV/cm. The results indicate that approximately 50% of the bulk permittivity and 20% of bulk spontaneous polarization can be retained in submicron epitaxial KNN-LT-LS thin film, respectively. The conductivity of the films remains to be a challenge as evidenced by the high loss tangent, leakage currents, and broad hysteresis loops.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Nuclear microscopy in Alzheimer's disease

NASA Astrophysics Data System (ADS)

Makjanic, Jagoda; Watt, Frank

1999-04-01

The elemental composition of the two types of brain lesions which characterise Alzheimer's disease (AD) has been the subject of intense scrutiny over the last decade, ever since it was proposed that inorganic trace elements, particularly aluminium, might be implicated in the pathogenesis of the disease. The major evidence for this involvement was the detection of aluminium in the characteristic lesions of the AD brain; neuritic plaques and neurofibrillary tangles (NFTs). Using the powerful combination of Particle-Induced X-ray Emission (PIXE), Rutherford Backscattering Spectrometry (RBS) and Scanning Transmission Ion Microscopy (STIM), it is possible to image and analyse structures in brain sections without recourse to chemical staining. Previous results on elemental composition of senile plaques indicated the absence of aluminium at the 15 parts per million level. We have more recently focused on the analysis of neurofibrillary tangles (NFTs), destructive structural defects within neurons. Imaging and analysis of neurons in brain tissue presented a greater challenge due to the small dimensional size compared with the plaques. We describe the methodology and the results of imaging and analysing neurons in brain tissue sections using Nuclear Microscopy. Our results show that aluminium is not present in either neurons or surrounding tissue in unstained sections at the 20 ppm level, but can be observed in stained sections. We also report elemental concentrations showing significant elevations of phosphorus, sulphur, chlorine, iron and zinc.

Swift heavy-ions induced sputtering in BaF2 thin films

NASA Astrophysics Data System (ADS)

Pandey, Ratnesh K.; Kumar, Manvendra; Singh, Udai B.; Khan, Saif A.; Avasthi, D. K.; Pandey, Avinash C.

2013-11-01

In our present experiment a series of barium fluoride thin films of different thicknesses have been deposited by electron beam evaporation technique at room temperature on silicon substrates. The effect of film thickness on the electronic sputter yield of polycrystalline BaF2 thin films has been reported in the present work. Power law for sputtered species collected on catcher grids has also been reported for film of lowest thickness. Sputtering has been performed by 100 MeV Au+28 ions. Atomic force microscopy (AFM) has been done to check the surface morphology of pristine samples. Glancing angle X-ray diffraction (GAXRD) measurements show that the pristine films are polycrystalline in nature and the grain size increases with increase in film thickness. Rutherford backscattering spectrometry (RBS) of pristine as well as irradiated films was done to determine the areal concentration of Ba and F atoms in the films. A reduction in the sputter yield of BaF2 films with the increase in film thickness has been observed from RBS results. The thickness dependence sputtering is explained on the basis of thermal spike and the energy confinement of the ions in the smaller grains. Also transmission electron microscopy (TEM) of the catchers shows a size distribution of sputtered species with values of power law exponent 1/2 and 3/2 for two fluences 5 × 1011 and 1 × 1012 ions/cm2, respectively.

Transport of water and solutes in reverse osmosis and nanofiltration membranes

NASA Astrophysics Data System (ADS)

Cahill, David

2009-03-01

The polyamide active layers of reverse osmosis and nanofiltration membranes used for water purification are real-world examples of nanoscale functional materials: the active layer is only ˜100 nm thick. Because the active layer is formed by a process of interfacial polymerization, the structure and composition of the membrane is highly inhomogeneous and even such basic physical and chemical properties as the atomic density, swelling in water, the distribution of charged species between water and membrane, and the mobility of water and ions, are poorly understood. We are using Rutherford backscattering spectrometry (RBS) to determine the composition, roughness, and thickness of the membrane; reveal the surprisingly high solubility of salt ions in the polymer active layer; analyze the acid-base chemistry of charged functional groups; and determine the degree of polymer cross-linking. Measurements of mass-uptake and adsorption-induced mechanical stress of membranes in humid air enable us to determine the water solubility, specific volume of water, and the mechanical strength of the membrane. Comparisons between these equilibrium data and the permeability of the membrane to water and salts show that the mobility of water molecules in the membrane approaches the mobility of bulk water, and that the rejection of salt ions is accomplished by low mobility, not low solubility. My collaborators in this work are Xijing Zhang, Orlando Coronell, and Prof. Benito Mariñas.

Irradiation-induced defect formation and damage accumulation in single crystal CeO2

NASA Astrophysics Data System (ADS)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2018-01-01

The accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 ×1016 cm-2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.