Sample records for s4 voltage sensor

  1. Stabilization of the Activated hERG Channel Voltage Sensor by Depolarization Involves the S4-S5 Linker.

    PubMed

    Thouta, Samrat; Hull, Christina M; Shi, Yu Patrick; Sergeev, Valentine; Young, James; Cheng, Yen M; Claydon, Thomas W

    2017-01-24

    Slow deactivation of hERG channels is critical for preventing cardiac arrhythmia yet the mechanistic basis for the slow gating transition is unclear. Here, we characterized the temporal sequence of events leading to voltage sensor stabilization upon membrane depolarization. Progressive increase in step depolarization duration slowed voltage-sensor return in a biphasic manner (τ fast = 34 ms, τ slow  = 2.5 s). The faster phase of voltage-sensor return slowing correlated with the kinetics of pore opening. The slower component occurred over durations that exceeded channel activation and was consistent with voltage sensor relaxation. The S4-S5 linker mutation, G546L, impeded the faster phase of voltage sensor stabilization without attenuating the slower phase, suggesting that the S4-S5 linker is important for communications between the pore gate and the voltage sensor during deactivation. These data also demonstrate that the mechanisms of pore gate-opening-induced and relaxation-induced voltage-sensor stabilization are separable. Deletion of the distal N-terminus (Δ2-135) accelerated off-gating current, but did not influence the relative contribution of either mechanism of stabilization of the voltage sensor. Lastly, we characterized mode-shift behavior in hERG channels, which results from stabilization of activated channel states. The apparent mode-shift depended greatly on recording conditions. By measuring slow activation and deactivation at steady state we found the "true" mode-shift to be ∼15 mV. Interestingly, the "true" mode-shift of gating currents was ∼40 mV, much greater than that of the pore gate. This demonstrates that voltage sensor return is less energetically favorable upon repolarization than pore gate closure. We interpret this to indicate that stabilization of the activated voltage sensor limits the return of hERG channels to rest. The data suggest that this stabilization occurs as a result of reconfiguration of the pore gate upon opening

  2. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    PubMed

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel; Gomora, Juan Carlos

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  3. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels

    PubMed Central

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30–40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers. PMID:29474447

  4. IKs channels open slowly because KCNE1 accessory subunits slow the movement of S4 voltage sensors in KCNQ1 pore-forming subunits

    PubMed Central

    Ruscic, Katarina J.; Miceli, Francesco; Villalba-Galea, Carlos A.; Dai, Hui; Mishina, Yukiko; Bezanilla, Francisco; Goldstein, Steve A. N.

    2013-01-01

    Human IKs channels activate slowly with the onset of cardiac action potentials to repolarize the myocardium. IKs channels are composed of KCNQ1 (Q1) pore-forming subunits that carry S4 voltage-sensor segments and KCNE1 (E1) accessory subunits. Together, Q1 and E1 subunits recapitulate the conductive and kinetic properties of IKs. How E1 modulates Q1 has been unclear. Investigators have variously posited that E1 slows the movement of S4 segments, slows opening and closing of the conduction pore, or modifies both aspects of electromechanical coupling. Here, we show that Q1 gating current can be resolved in the absence of E1, but not in its presence, consistent with slowed movement of the voltage sensor. E1 was directly demonstrated to slow S4 movement with a fluorescent probe on the Q1 voltage sensor. Direct correlation of the kinetics of S4 motion and ionic current indicated that slowing of sensor movement by E1 was both necessary and sufficient to determine the slow-activation time course of IKs. PMID:23359697

  5. Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

    NASA Astrophysics Data System (ADS)

    Vaccaro, S. R.

    2011-09-01

    The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process.

  6. Genetically-encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics

    PubMed Central

    Baker, Bradley J.; Jin, Lei; Han, Zhou; Cohen, Lawrence B.; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-01-01

    A substantial increase in the speed of the optical response of genetically-encoded Fluorescent Protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1–S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tauoff <5 msec). However, the signal was small (ΔF/F= 0.6%/200 mV). FP voltage sensors using the D. rerio voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2 msec of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. PMID:22634212

  7. Genetically encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics.

    PubMed

    Baker, Bradley J; Jin, Lei; Han, Zhou; Cohen, Lawrence B; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-07-15

    A substantial increase in the speed of the optical response of genetically encoded fluorescent protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1-S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tau(off)<5ms). However, the signal was small (ΔF/F=0.4%/200mV). FP voltage sensors using the D. rerio voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2ms of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. Copyright © 2012 Elsevier B.V. All rights reserved.

  8. The topogenic function of S4 promotes membrane insertion of the voltage-sensor domain in the KvAP channel.

    PubMed

    Mishima, Eriko; Sato, Yoko; Nanatani, Kei; Hoshi, Naomi; Lee, Jong-Kook; Schiller, Nina; von Heijne, Gunnar; Sakaguchi, Masao; Uozumi, Nobuyuki

    2016-12-01

    Voltage-dependent K + (K V ) channels control K + permeability in response to shifts in the membrane potential. Voltage sensing in K V channels is mediated by the positively charged transmembrane domain S4. The best-characterized K V channel, KvAP, lacks the distinct hydrophilic region corresponding to the S3-S4 extracellular loop that is found in other K + channels. In the present study, we evaluated the topogenic properties of the transmembrane regions within the voltage-sensing domain in KvAP. S3 had low membrane insertion activity, whereas S4 possessed a unique type-I signal anchor (SA-I) function, which enabled it to insert into the membrane by itself. S4 was also found to function as a stop-transfer signal for retention in the membrane. The length and structural nature of the extracellular S3-S4 loop affected the membrane insertion of S3 and S4, suggesting that S3 membrane insertion was dependent on S4. Replacement of charged residues within the transmembrane regions with residues of opposite charge revealed that Asp 72 in S2 and Glu 93 in S3 contributed to membrane insertion of S3 and S4, and increased the stability of S4 in the membrane. These results indicate that the SA-I function of S4, unique among K + channels studied to date, promotes the insertion of S3 into the membrane, and that the charged residues essential for voltage sensing contribute to the membrane-insertion of the voltage sensor domain in KvAP. © 2016 The Author(s); published by Portland Press Limited on behalf of the Biochemical Society.

  9. Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels.

    PubMed

    Wang, Zhuren; Dou, Ying; Goodchild, Samuel J; Es-Salah-Lamoureux, Zeineb; Fedida, David

    2013-04-01

    The human ether-á-go-go-related gene (hERG) K(+) channel encodes the pore-forming α subunit of the rapid delayed rectifier current, IKr, and has unique activation gating kinetics, in that the α subunit of the channel activates and deactivates very slowly, which focuses the role of IKr current to a critical period during action potential repolarization in the heart. Despite its physiological importance, fundamental mechanistic properties of hERG channel activation gating remain unclear, including how voltage-sensor movement rate limits pore opening. Here, we study this directly by recording voltage-sensor domain currents in mammalian cells for the first time and measuring the rates of voltage-sensor modification by [2-(trimethylammonium)ethyl] methanethiosulfonate chloride (MTSET). Gating currents recorded from hERG channels expressed in mammalian tsA201 cells using low resistance pipettes show two charge systems, defined as Q(1) and Q(2), with V(1/2)'s of -55.7 (equivalent charge, z = 1.60) and -54.2 mV (z = 1.30), respectively, with the Q(2) charge system carrying approximately two thirds of the overall gating charge. The time constants for charge movement at 0 mV were 2.5 and 36.2 ms for Q(1) and Q(2), decreasing to 4.3 ms for Q(2) at +60 mV, an order of magnitude faster than the time constants of ionic current appearance at these potentials. The voltage and time dependence of Q2 movement closely correlated with the rate of MTSET modification of I521C in the outermost region of the S4 segment, which had a V(1/2) of -64 mV and time constants of 36 ± 8.5 ms and 11.6 ± 6.3 ms at 0 and +60 mV, respectively. Modeling of Q(1) and Q(2) charge systems showed that a minimal scheme of three transitions is sufficient to account for the experimental findings. These data point to activation steps further downstream of voltage-sensor movement that provide the major delays to pore opening in hERG channels.

  10. Two separate interfaces between the voltage sensor and pore are required for the function of voltage-dependent K(+) channels.

    PubMed

    Lee, Seok-Yong; Banerjee, Anirban; MacKinnon, Roderick

    2009-03-03

    Voltage-dependent K(+) (Kv) channels gate open in response to the membrane voltage. To further our understanding of how cell membrane voltage regulates the opening of a Kv channel, we have studied the protein interfaces that attach the voltage-sensor domains to the pore. In the crystal structure, three physical interfaces exist. Only two of these consist of amino acids that are co-evolved across the interface between voltage sensor and pore according to statistical coupling analysis of 360 Kv channel sequences. A first co-evolved interface is formed by the S4-S5 linkers (one from each of four voltage sensors), which form a cuff surrounding the S6-lined pore opening at the intracellular surface. The crystal structure and published mutational studies support the hypothesis that the S4-S5 linkers convert voltage-sensor motions directly into gate opening and closing. A second co-evolved interface forms a small contact surface between S1 of the voltage sensor and the pore helix near the extracellular surface. We demonstrate through mutagenesis that this interface is necessary for the function and/or structure of two different Kv channels. This second interface is well positioned to act as a second anchor point between the voltage sensor and the pore, thus allowing efficient transmission of conformational changes to the pore's gate.

  11. The sliding-helix voltage sensor

    PubMed Central

    Peyser, Alexander; Nonner, Wolfgang

    2012-01-01

    The voltage sensor (VS) domain of voltage-gated ion channels underlies electrical excitability of living cells. We simulate a mesoscale model of the VS domain to determine the functional consequences of some of its physical elements. Our mesoscale model is based on VS charges, linear dielectrics and whole-body motion, applied to an S4 ‘sliding helix’. The electrostatics under voltage-clamped boundary conditions are solved consistently using a boundary element method. Based on electrostatic configurational energy, statistical-mechanical expectations of the experimentally observable relation between displaced charge and membrane voltage are predicted. Consequences of the model are investigated for variations of: S4 configuration (α- and 310-helical), countercharge alignment with S4 charges, protein polarizability, geometry of the gating canal, screening of S4 charges by the baths, and fixed charges located at the bath interfaces. The sliding helix VS domain has an inherent electrostatic stability in the explored parameter space: countercharges present in the region of weak dielectric always retain an equivalent S4 charge in that region but allow sliding movements displacing 3 to 4 e0. That movement is sensitive to small energy variations (< 2kT) along the path dependent on a number of electrostatic parameters tested in our simulations. These simulations show how the slope of the relation between displaced charge and voltage could be tuned in a channel. PMID:22907204

  12. Probing α-3(10) transitions in a voltage-sensing S4 helix.

    PubMed

    Kubota, Tomoya; Lacroix, Jérôme J; Bezanilla, Francisco; Correa, Ana M

    2014-09-02

    The S4 helix of voltage sensor domains (VSDs) transfers its gating charges across the membrane electrical field in response to changes of the membrane potential. Recent studies suggest that this process may occur via the helical conversion of the entire S4 between α and 310 conformations. Here, using LRET and FRET, we tested this hypothesis by measuring dynamic changes in the transmembrane length of S4 from engineered VSDs expressed in Xenopus oocytes. Our results suggest that the native S4 from the Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) does not exhibit extended and long-lived 310 conformations and remains mostly α-helical. Although the S4 of NavAb displays a fully extended 310 conformation in x-ray structures, its transplantation in the Ci-VSP VSD scaffold yielded similar results as the native Ci-VSP S4. Taken together, our study does not support the presence of long-lived extended α-to-310 helical conversions of the S4 in Ci-VSP associated with voltage activation. Copyright © 2014 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  13. Direct Interaction between the Voltage Sensors Produces Cooperative Sustained Deactivation in Voltage-gated H+ Channel Dimers*

    PubMed Central

    Okuda, Hiroko; Yonezawa, Yasushige; Takano, Yu; Okamura, Yasushi; Fujiwara, Yuichiro

    2016-01-01

    The voltage-gated H+ channel (Hv) is a voltage sensor domain-like protein consisting of four transmembrane segments (S1–S4). The native Hv structure is a homodimer, with the two channel subunits functioning cooperatively. Here we show that the two voltage sensor S4 helices within the dimer directly cooperate via a π-stacking interaction between Trp residues at the middle of each segment. Scanning mutagenesis showed that Trp situated around the original position provides the slow gating kinetics characteristic of the dimer's cooperativity. Analyses of the Trp mutation on the dimeric and monomeric channel backgrounds and analyses with tandem channel constructs suggested that the two Trp residues within the dimer are functionally coupled during Hv deactivation but are less so during activation. Molecular dynamics simulation also showed direct π-stacking of the two Trp residues. These results provide new insight into the cooperative function of voltage-gated channels, where adjacent voltage sensor helices make direct physical contact and work as a single unit according to the gating process. PMID:26755722

  14. Voltage Sensor

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Under a Lewis Research Center Small Business Innovation Research contract, SRICO, Inc. developed a fiber optic voltage sensor to measure voltage in electronic systems in spacecraft. The sensor uses glass and light to sense and transmit electricity, and is relatively safe and accurate. SRICO then commercialized the sensor for measurement of electric field and voltage in applications such as electric power systems and hazardous environments, lightning detection, and fiber optic communication systems.

  15. Voltage Sensor Inactivation in Potassium Channels

    PubMed Central

    Bähring, Robert; Barghaan, Jan; Westermeier, Regina; Wollberg, Jessica

    2012-01-01

    In voltage-gated potassium (Kv) channels membrane depolarization causes movement of a voltage sensor domain. This conformational change of the protein is transmitted to the pore domain and eventually leads to pore opening. However, the voltage sensor domain may interact with two distinct gates in the pore domain: the activation gate (A-gate), involving the cytoplasmic S6 bundle crossing, and the pore gate (P-gate), located externally in the selectivity filter. How the voltage sensor moves and how tightly it interacts with these two gates on its way to adopt a relaxed conformation when the membrane is depolarized may critically determine the mode of Kv channel inactivation. In certain Kv channels, voltage sensor movement leads to a tight interaction with the P-gate, which may cause conformational changes that render the selectivity filter non-conductive (“P/C-type inactivation”). Other Kv channels may preferably undergo inactivation from pre-open closed-states during voltage sensor movement, because the voltage sensor temporarily uncouples from the A-gate. For this behavior, known as “preferential” closed-state inactivation, we introduce the term “A/C-type inactivation”. Mechanistically, P/C- and A/C-type inactivation represent two forms of “voltage sensor inactivation.” PMID:22654758

  16. Interactions between voltage sensor and pore domains in a hERG K+ channel model from molecular simulations and the effects of a voltage sensor mutation.

    PubMed

    Colenso, Charlotte K; Sessions, Richard B; Zhang, Yi H; Hancox, Jules C; Dempsey, Christopher E

    2013-06-24

    The hERG K(+) channel is important for establishing normal electrical activity in the human heart. The channel's unique gating response to membrane potential changes indicates specific interactions between voltage sensor and pore domains that are poorly understood. In the absence of a crystal structure we constructed a homology model of the full hERG membrane domain and performed 0.5 μs molecular dynamics (MD) simulations in a hydrated membrane. The simulations identify potential interactions involving residues at the extracellular surface of S1 in the voltage sensor and at the N-terminal end of the pore helix in the hERG model. In addition, a diffuse interface involving hydrophobic residues on S4 (voltage sensor) and pore domain S5 of an adjacent subunit was stable during 0.5 μs of simulation. To assess the ability of the model to give insight into the effects of channel mutation we simulated a hERG mutant that contains a Leu to Pro substitution in the voltage sensor S4 helical segment (hERG L532P). Consistent with the retention of gated K(+) conductance, the L532P mutation was accommodated in the S4 helix with little disruption of helical structure. The mutation reduced the extent of interaction across the S4-S5 interface, suggesting a structural basis for the greatly enhanced deactivation rate in hERG L532P. The study indicates that pairwise comparison of wild-type and mutated channel models is a useful approach to interpreting functional data where uncertainty in model structures exist.

  17. Electro-optical voltage sensor head

    DOEpatents

    Woods, G.K.

    1998-03-24

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 6 figs.

  18. Coupling interactions between voltage sensors of the sodium channel as revealed by site-specific measurements.

    PubMed

    Chanda, Baron; Asamoah, Osei Kwame; Bezanilla, Francisco

    2004-03-01

    The voltage-sensing S4 segments in the sodium channel undergo conformational rearrangements in response to changes in the electric field. However, it remains unclear whether these structures move independently or in a coordinated manner. Previously, site-directed fluorescence measurements were shown to track S4 transitions in each of the four domains. Here, using a similar technique, we provide direct evidence of coupling interactions between voltage sensors in the sodium channel. Pairwise interactions between S4s were evaluated by comparing site-specific conformational changes in the presence and absence of a gating perturbation in a distal domain. Reciprocity of effect, a fundamental property of thermodynamically coupled systems, was measured by generating converse mutants. The magnitude of a local gating perturbation induced by a remote S4 mutation depends on the coupling strength and the relative equilibrium positions of the two voltage sensors. In general, our data indicates that the movement of all four voltage sensors in the sodium channel are coupled to a varying extent. Moreover, a gating perturbation in S4-DI has the largest effect on the activation of S4-DIV and vice versa, demonstrating an energetic linkage between S4-DI and S4-DIV. This result suggests a physical mechanism by which the activation and inactivation process may be coupled in voltage-gated sodium channels. In addition, we propose that cooperative interactions between voltage sensors may be the mechanistic basis for the fast activation kinetics of the sodium channel.

  19. Mode shift of the voltage sensors in Shaker K+ channels is caused by energetic coupling to the pore domain

    PubMed Central

    Haddad, Georges A.

    2011-01-01

    The voltage sensors of voltage-gated ion channels undergo a conformational change upon depolarization of the membrane that leads to pore opening. This conformational change can be measured as gating currents and is thought to be transferred to the pore domain via an annealing of the covalent link between voltage sensor and pore (S4-S5 linker) and the C terminus of the pore domain (S6). Upon prolonged depolarizations, the voltage dependence of the charge movement shifts to more hyperpolarized potentials. This mode shift had been linked to C-type inactivation but has recently been suggested to be caused by a relaxation of the voltage sensor itself. In this study, we identified two ShakerIR mutations in the S4-S5 linker (I384N) and S6 (F484G) that, when mutated, completely uncouple voltage sensor movement from pore opening. Using these mutants, we show that the pore transfers energy onto the voltage sensor and that uncoupling the pore from the voltage sensor leads the voltage sensors to be activated at more negative potentials. This uncoupling also eliminates the mode shift occurring during prolonged depolarizations, indicating that the pore influences entry into the mode shift. Using voltage-clamp fluorometry, we identified that the slow conformational change of the S4 previously correlated with the mode shift disappears when uncoupling the pore. The effects can be explained by a mechanical load that is imposed upon the voltage sensors by the pore domain and allosterically modulates its conformation. Mode shift is caused by the stabilization of the open state but leads to a conformational change in the voltage sensor. PMID:21518834

  20. Electro-optic voltage sensor for sensing voltage in an E-field

    DOEpatents

    Woods, G.K.; Renak, T.W.

    1999-04-06

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages is disclosed. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam`s polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured. 18 figs.

  1. Voltage Sensors Monitor Harmful Static

    NASA Technical Reports Server (NTRS)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  2. A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore.

    PubMed

    Tomczak, Adam P; Fernández-Trillo, Jorge; Bharill, Shashank; Papp, Ferenc; Panyi, Gyorgy; Stühmer, Walter; Isacoff, Ehud Y; Pardo, Luis A

    2017-05-01

    Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4-S5 linker). However, our recent work on channels disrupted in the S4-S5 linker has challenged this interpretation for the KCNH family. Furthermore, a recent single-particle cryo-electron microscopy structure of K V 10.1 revealed that the S4-S5 linker is a short loop in this KCNH family member, confirming the need for an alternative gating model. Here we use "split" channels made by expression of VSD and PD as separate fragments to investigate the mechanism of gating in K V 10.1. We find that disruption of the covalent connection within the S4 helix compromises the ability of channels to close at negative voltage, whereas disconnecting the S4-S5 linker from S5 slows down activation and deactivation kinetics. Surprisingly, voltage-clamp fluorometry and MTS accessibility assays show that the motion of the S4 voltage sensor is virtually unaffected when VSD and PD are not covalently bound. Finally, experiments using constitutively open PD mutants suggest that the presence of the VSD is structurally important for the conducting conformation of the pore. Collectively, our observations offer partial support to the gating model that assumes that an inward motion of the C-terminal S4 helix, rather than the S4-S5 linker, closes the channel gate, while also suggesting that control of the pore by the voltage sensor involves more than one mechanism. © 2017 Tomczak et al.

  3. A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore

    PubMed Central

    Fernández-Trillo, Jorge; Bharill, Shashank; Panyi, Gyorgy; Stühmer, Walter; Isacoff, Ehud Y.

    2017-01-01

    Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4S5 linker). However, our recent work on channels disrupted in the S4S5 linker has challenged this interpretation for the KCNH family. Furthermore, a recent single-particle cryo-electron microscopy structure of KV10.1 revealed that the S4S5 linker is a short loop in this KCNH family member, confirming the need for an alternative gating model. Here we use “split” channels made by expression of VSD and PD as separate fragments to investigate the mechanism of gating in KV10.1. We find that disruption of the covalent connection within the S4 helix compromises the ability of channels to close at negative voltage, whereas disconnecting the S4S5 linker from S5 slows down activation and deactivation kinetics. Surprisingly, voltage-clamp fluorometry and MTS accessibility assays show that the motion of the S4 voltage sensor is virtually unaffected when VSD and PD are not covalently bound. Finally, experiments using constitutively open PD mutants suggest that the presence of the VSD is structurally important for the conducting conformation of the pore. Collectively, our observations offer partial support to the gating model that assumes that an inward motion of the C-terminal S4 helix, rather than the S4S5 linker, closes the channel gate, while also suggesting that control of the pore by the voltage sensor involves more than one mechanism. PMID:28360219

  4. Electro-optical voltage sensor head

    DOEpatents

    Woods, Gregory K.

    1998-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  5. Phosphatase activity of the voltage-sensing phosphatase, VSP, shows graded dependence on the extent of activation of the voltage sensor

    PubMed Central

    Sakata, Souhei; Okamura, Yasushi

    2014-01-01

    The voltage-sensing phosphatase (VSP) consists of a voltage sensor and a cytoplasmic phosphatase region, and the movement of the voltage sensor is coupled to the phosphatase activity. However, its coupling mechanisms still remain unclear. One possible scenario is that the phosphatase is activated only when the voltage sensor is in a fully activated state. Alternatively, the enzymatic activity of single VSP proteins could be graded in distinct activated states of the voltage sensor, and partial activation of the voltage sensor could lead to partial activation of the phosphatase. To distinguish between these two possibilities, we studied a voltage sensor mutant of zebrafish VSP, where the voltage sensor moves in two steps as evidenced by analyses of charge movements of the voltage sensor and voltage clamp fluorometry. Measurements of the phosphatase activity toward phosphatidylinositol 4,5-bisphosphate revealed that both steps of voltage sensor activation are coupled to the tuning of phosphatase activities, consistent with the idea that the phosphatase activity is graded by the magnitude of the movement of the voltage sensor. PMID:24277865

  6. Phosphatase activity of the voltage-sensing phosphatase, VSP, shows graded dependence on the extent of activation of the voltage sensor.

    PubMed

    Sakata, Souhei; Okamura, Yasushi

    2014-03-01

    The voltage-sensing phosphatase (VSP) consists of a voltage sensor and a cytoplasmic phosphatase region, and the movement of the voltage sensor is coupled to the phosphatase activity. However, its coupling mechanisms still remain unclear. One possible scenario is that the phosphatase is activated only when the voltage sensor is in a fully activated state. Alternatively, the enzymatic activity of single VSP proteins could be graded in distinct activated states of the voltage sensor, and partial activation of the voltage sensor could lead to partial activation of the phosphatase. To distinguish between these two possibilities, we studied a voltage sensor mutant of zebrafish VSP, where the voltage sensor moves in two steps as evidenced by analyses of charge movements of the voltage sensor and voltage clamp fluorometry. Measurements of the phosphatase activity toward phosphatidylinositol 4,5-bisphosphate revealed that both steps of voltage sensor activation are coupled to the tuning of phosphatase activities, consistent with the idea that the phosphatase activity is graded by the magnitude of the movement of the voltage sensor.

  7. Structural interactions between lipids, water and S1-S4 voltage-sensing domains.

    PubMed

    Krepkiy, Dmitriy; Gawrisch, Klaus; Swartz, Kenton J

    2012-11-02

    Membrane proteins serve crucial signaling and transport functions, yet relatively little is known about their structures in membrane environments or how lipids interact with these proteins. For voltage-activated ion channels, X-ray structures suggest that the mobile voltage-sensing S4 helix would be exposed to the membrane, and functional studies reveal that lipid modification can profoundly alter channel activity. Here, we use solid-state NMR to investigate structural interactions of lipids and water with S1-S4 voltage-sensing domains and to explore whether lipids influence the structure of the protein. Our results demonstrate that S1-S4 domains exhibit extensive interactions with lipids and that these domains are heavily hydrated when embedded in a membrane. We also find evidence for preferential interactions of anionic lipids with S1-S4 domains and that these interactions have lifetimes on the timescale of ≤ 10(-3)s. Arg residues within S1-S4 domains are well hydrated and are positioned in close proximity to lipids, exhibiting local interactions with both lipid headgroups and acyl chains. Comparative studies with a positively charged lipid lacking a phosphodiester group reveal that this lipid modification has only modest effects on the structure and hydration of S1-S4 domains. Taken together, our results demonstrate that Arg residues in S1-S4 voltage-sensing domains reside in close proximity to the hydrophobic interior of the membrane yet are well hydrated, a requirement for carrying charge and driving protein motions in response to changes in membrane voltage. Published by Elsevier Ltd.

  8. Structural interactions between lipids, water and S1-S4 voltage-sensing domains

    PubMed Central

    Krepkiy, Dmitriy; Gawrisch, Klaus; Swartz, Kenton J.

    2012-01-01

    Membrane proteins serve crucial signaling and transport functions, yet relatively little is known about their structures in membrane environments or how lipids interact with these proteins. For voltage-activated ion channels, X-ray structures suggest that the mobile voltage-sensing S4 helix would be exposed to the membrane, and functional studies reveal that lipid modification can profoundly alter channel activity. Here we use solid-state NMR to investigate structural interactions of lipids and water with S1-S4 voltage-sensing domains, and to explore whether lipids influence the structure of the protein. Our results demonstrate that S1-S4 domains exhibit extensive interactions with lipids, and that these domains are heavily hydrated when embedded in a membrane. We also find evidence for preferential interactions of anionic lipids with S1-S4 domains, and that these interactions have lifetimes on the timescale of 10−3s. Arg residues within S1-S4 domains are well-hydrated and are positioned in close proximity to lipids, exhibiting local interactions with both lipid head groups and acyl chains. Comparative studies with a positively charged lipid lacking a phosphodiester group reveal that this lipid modification has only modest effects on the structure and hydration of S1-S4 domains. Taken together, our results demonstrate that Arg residues in S1-S4 voltage-sensing domains reside in close proximity to the hydrophobic interior of the membrane, yet are well-hydrated, a requirement for carrying charge and driving protein motions in response to changes in membrane voltage. PMID:22858867

  9. Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel.

    PubMed

    Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

    2012-01-01

    Modern "smart" CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage "smart" image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  10. Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

    PubMed Central

    Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

    2012-01-01

    Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel. PMID:23112588

  11. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel.

    PubMed

    Tang, Cheng; Zhou, Xi; Nguyen, Phuong Tran; Zhang, Yunxiao; Hu, Zhaotun; Zhang, Changxin; Yarov-Yarovoy, Vladimir; DeCaen, Paul G; Liang, Songping; Liu, Zhonghua

    2017-07-01

    Voltage-gated sodium channels (Na V s) are activated by transiting the voltage sensor from the deactivated to the activated state. The crystal structures of several bacterial Na V s have captured the voltage sensor module (VSM) in an activated state, but structure of the deactivated voltage sensor remains elusive. In this study, we sought to identify peptide toxins stabilizing the deactivated VSM of bacterial Na V s. We screened fractions from several venoms and characterized a cystine knot toxin called JZTx-27 from the venom of tarantula Chilobrachys jingzhao as a high-affinity antagonist of the prokaryotic Na V s Ns V Ba (nonselective voltage-gated Bacillus alcalophilus ) and NaChBac (bacterial sodium channel from Bacillus halodurans ) (IC 50 = 112 nM and 30 nM, respectively). JZTx-27 was more efficacious at weaker depolarizing voltages and significantly slowed the activation but accelerated the deactivation of Ns V Ba, whereas the local anesthetic drug lidocaine was shown to antagonize Ns V Ba without affecting channel gating. Mutation analysis confirmed that JZTx-27 bound to S3-4 linker of Ns V Ba, with F98 being the critical residue in determining toxin affinity. All electrophysiological data and in silico analysis suggested that JZTx-27 trapped VSM of Ns V Ba in one of the deactivated states. In mammalian Na V s, JZTx-27 preferably inhibited the inactivation of Na V 1.5 by targeting the fourth transmembrane domain. To our knowledge, this is the first report of peptide antagonist for prokaryotic Na V s. More important, we proposed that JZTx-27 stabilized the Ns V Ba VSM in the deactivated state and may be used as a probe to determine the structure of the deactivated VSM of Na V s.-Tang, C., Zhou, X., Nguyen, P. T., Zhang, Y., Hu, Z., Zhang, C., Yarov-Yarovoy, V., DeCaen, P. G., Liang, S., Liu, Z. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel. © FASEB.

  12. Binding site in eag voltage sensor accommodates a variety of ions and is accessible in closed channel.

    PubMed

    Silverman, William R; Bannister, John P A; Papazian, Diane M

    2004-11-01

    In ether-a-go-go K+ channels, voltage-dependent activation is modulated by ion binding to a site located in an extracellular-facing crevice between transmembrane segments S2 and S3 in the voltage sensor. We find that acidic residues D278 in S2 and D327 in S3 are able to coordinate a variety of divalent cations, including Mg2+, Mn2+, and Ni2+, which have qualitatively similar functional effects, but different half-maximal effective concentrations. Our data indicate that ions binding to individual voltage sensors in the tetrameric channel act without cooperativity to modulate activation gating. We have taken advantage of the unique phenotype of Ni2+ in the D274A channel, which contains a mutation of a nonbinding site residue, to demonstrate that ions can access the binding site from the extracellular solution when the voltage sensor is in the resting conformation. Our results are difficult to reconcile with the x-ray structure of the KvAP K+ channel, in which the binding site residues are widely separated, and with the hydrophobic paddle model for voltage-dependent activation, in which the voltage sensor domain, including the S3-S4 loop, is near the cytoplasmic side of the membrane in the closed channel.

  13. Electro-optic voltage sensor for sensing voltage in an E-field

    DOEpatents

    Woods, Gregory K.; Renak, Todd W.

    1999-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages. The system employs a transmitter, a sensor disposed adjacent to but out of direct electrical contact with a conductor on which the voltage is to be measured, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor where the beam undergoes the Pockels electro-optic effect. The electro-optic effect causes phase shifting in the beam, which is in turn converted to a pair of independent beams, from which the voltage of a system based on its E-field is determined when the two beams are normalized by the signal processor. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse whose ellipticity varies between -1 and +1 in proportion to voltage) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  14. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    NASA Astrophysics Data System (ADS)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-09-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels.

  15. S1-S3 counter charges in the voltage sensor module of a mammalian sodium channel regulate fast inactivation.

    PubMed

    Groome, James R; Winston, Vern

    2013-05-01

    The movement of positively charged S4 segments through the electric field drives the voltage-dependent gating of ion channels. Studies of prokaryotic sodium channels provide a mechanistic view of activation facilitated by electrostatic interactions of negatively charged residues in S1 and S2 segments, with positive counterparts in the S4 segment. In mammalian sodium channels, S4 segments promote domain-specific functions that include activation and several forms of inactivation. We tested the idea that S1-S3 countercharges regulate eukaryotic sodium channel functions, including fast inactivation. Using structural data provided by bacterial channels, we constructed homology models of the S1-S4 voltage sensor module (VSM) for each domain of the mammalian skeletal muscle sodium channel hNaV1.4. These show that side chains of putative countercharges in hNaV1.4 are oriented toward the positive charge complement of S4. We used mutagenesis to define the roles of conserved residues in the extracellular negative charge cluster (ENC), hydrophobic charge region (HCR), and intracellular negative charge cluster (INC). Activation was inhibited with charge-reversing VSM mutations in domains I-III. Charge reversal of ENC residues in domains III (E1051R, D1069K) and IV (E1373K, N1389K) destabilized fast inactivation by decreasing its probability, slowing entry, and accelerating recovery. Several INC mutations increased inactivation from closed states and slowed recovery. Our results extend the functional characterization of VSM countercharges to fast inactivation, and support the premise that these residues play a critical role in domain-specific gating transitions for a mammalian sodium channel.

  16. Non-intrusive high voltage measurement using slab coupled optical sensors

    NASA Astrophysics Data System (ADS)

    Stan, Nikola; Chadderdon, Spencer; Selfridge, Richard H.; Schultz, Stephen M.

    2014-03-01

    We present an optical fiber non-intrusive sensor for measuring high voltage transients. The sensor converts the unknown voltage to electric field, which is then measured using slab-coupled optical fiber sensor (SCOS). Since everything in the sensor except the electrodes is made of dielectric materials and due to the small field sensor size, the sensor is minimally perturbing to the measured voltage. We present the details of the sensor design, which eliminates arcing and minimizes local dielectric breakdown using Teflon blocks and insulation of the whole structure with transformer oil. The structure has a capacitance of less than 3pF and resistance greater than 10 GΩ. We show the measurement of 66.5 kV pulse with a 32.6μs time constant. The measurement matches the expected value of 67.8 kV with less than 2% error.

  17. Non-contact current and voltage sensor

    DOEpatents

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  18. An RF-induced voltage sensor for investigating pacemaker safety in MRI.

    PubMed

    Barbier, Thérèse; Piumatti, Roberto; Hecker, Bertrand; Odille, Freddy; Felblinger, Jacques; Pasquier, Cédric

    2014-12-01

    Magnetic resonance imaging (MRI) is inadvisable for patients with pacemakers, as radiofrequency (RF) voltages induced in the pacemaker leads may cause the device to malfunction. Our goal is to develop a sensor to measure such RF-induced voltages during MRI safety tests. A sensor was designed (16.6 cm(2)) for measuring voltages at the connection between the pacemaker lead and its case. The induced voltage is demodulated, digitized, and transferred by optical fibres. The sensor was calibrated on the bench using RF pulses of known amplitude and duration. Then the sensor was tested during MRI scanning at 1.5 T in a saline gel filled phantom. Bench tests showed measurement errors below 5% with a (-40 V; +40 V) range, a precision of 0.06 V, and a temporal resolution of 24.2 μs. In MRI tests, variability in the measured voltages was below 3.7% for 996 measurements with different sensors and RF exposure. Coupling between the sensor and the MRI electromagnetic environment was estimated with a second sensor connected and was below 6.2%. For a typical clinical MRI sequence, voltages around ten Vp were detected. We have built an accurate and reproducible tool for measuring RF-induced voltages in pacemaker leads during MR safety investigations. The sensor might also be used with other conducting cables including those used for electrocardiography and neurostimulation.

  19. Voltage sensor and dielectric material

    DOEpatents

    Yakymyshyn, Christopher Paul; Yakymyshyn, Pamela Jane; Brubaker, Michael Allen

    2006-10-17

    A voltage sensor is described that consists of an arrangement of impedance elements. The sensor is optimized to provide an output ratio that is substantially immune to changes in voltage, temperature variations or aging. Also disclosed is a material with a large and stable dielectric constant. The dielectric constant can be tailored to vary with position or direction in the material.

  20. Electro-optic voltage sensor with beam splitting

    DOEpatents

    Woods, Gregory K.; Renak, Todd W.; Davidson, James R.; Crawford, Thomas M.

    2002-01-01

    The invention is a miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware typically found in the prior art. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  1. Research and Experiments on a Unipolar Capacitive Voltage Sensor

    PubMed Central

    Zhou, Qiang; He, Wei; Li, Songnong; Hou, Xingzhe

    2015-01-01

    Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid. PMID:26307992

  2. Systematic Sensor Selection Strategy (S4) User Guide

    NASA Technical Reports Server (NTRS)

    Sowers, T. Shane

    2012-01-01

    This paper describes a User Guide for the Systematic Sensor Selection Strategy (S4). S4 was developed to optimally select a sensor suite from a larger pool of candidate sensors based on their performance in a diagnostic system. For aerospace systems, selecting the proper sensors is important for ensuring adequate measurement coverage to satisfy operational, maintenance, performance, and system diagnostic criteria. S4 optimizes the selection of sensors based on the system fault diagnostic approach while taking conflicting objectives such as cost, weight and reliability into consideration. S4 can be described as a general architecture structured to accommodate application-specific components and requirements. It performs combinational optimization with a user defined merit or cost function to identify optimum or near-optimum sensor suite solutions. The S4 User Guide describes the sensor selection procedure and presents an example problem using an open source turbofan engine simulation to demonstrate its application.

  3. Time varying voltage combustion control and diagnostics sensor

    DOEpatents

    Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  4. KCNE1 constrains the voltage sensor of Kv7.1 K+ channels.

    PubMed

    Shamgar, Liora; Haitin, Yoni; Yisharel, Ilanit; Malka, Eti; Schottelndreier, Hella; Peretz, Asher; Paas, Yoav; Attali, Bernard

    2008-04-09

    Kv7 potassium channels whose mutations cause cardiovascular and neurological disorders are members of the superfamily of voltage-gated K(+) channels, comprising a central pore enclosed by four voltage-sensing domains (VSDs) and sharing a homologous S4 sensor sequence. The Kv7.1 pore-forming subunit can interact with various KCNE auxiliary subunits to form K(+) channels with very different gating behaviors. In an attempt to characterize the nature of the promiscuous gating of Kv7.1 channels, we performed a tryptophan-scanning mutagenesis of the S4 sensor and analyzed the mutation-induced perturbations in gating free energy. Perturbing the gating energetics of Kv7.1 bias most of the mutant channels towards the closed state, while fewer mutations stabilize the open state or the inactivated state. In the absence of auxiliary subunits, mutations of specific S4 residues mimic the gating phenotypes produced by co-assembly of Kv7.1 with either KCNE1 or KCNE3. Many S4 perturbations compromise the ability of KCNE1 to properly regulate Kv7.1 channel gating. The tryptophan-induced packing perturbations and cysteine engineering studies in S4 suggest that KCNE1 lodges at the inter-VSD S4-S1 interface between two adjacent subunits, a strategic location to exert its striking action on Kv7.1 gating functions.

  5. KCNE1 Constrains the Voltage Sensor of Kv7.1 K+ Channels

    PubMed Central

    Yisharel, Ilanit; Malka, Eti; Schottelndreier, Hella; Peretz, Asher; Paas, Yoav; Attali, Bernard

    2008-01-01

    Kv7 potassium channels whose mutations cause cardiovascular and neurological disorders are members of the superfamily of voltage-gated K+ channels, comprising a central pore enclosed by four voltage-sensing domains (VSDs) and sharing a homologous S4 sensor sequence. The Kv7.1 pore-forming subunit can interact with various KCNE auxiliary subunits to form K+ channels with very different gating behaviors. In an attempt to characterize the nature of the promiscuous gating of Kv7.1 channels, we performed a tryptophan-scanning mutagenesis of the S4 sensor and analyzed the mutation-induced perturbations in gating free energy. Perturbing the gating energetics of Kv7.1 bias most of the mutant channels towards the closed state, while fewer mutations stabilize the open state or the inactivated state. In the absence of auxiliary subunits, mutations of specific S4 residues mimic the gating phenotypes produced by co-assembly of Kv7.1 with either KCNE1 or KCNE3. Many S4 perturbations compromise the ability of KCNE1 to properly regulate Kv7.1 channel gating. The tryptophan-induced packing perturbations and cysteine engineering studies in S4 suggest that KCNE1 lodges at the inter-VSD S4-S1 interface between two adjacent subunits, a strategic location to exert its striking action on Kv7.1 gating functions. PMID:18398469

  6. Gating mechanism of Kv11.1 (hERG) K+ channels without covalent connection between voltage sensor and pore domains.

    PubMed

    de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

    2018-03-01

    Kv11.1 (hERG, KCNH2) is a voltage-gated potassium channel crucial in setting the cardiac rhythm and the electrical behaviour of several non-cardiac cell types. Voltage-dependent gating of Kv11.1 can be reconstructed from non-covalently linked voltage sensing and pore modules (split channels), challenging classical views of voltage-dependent channel activation based on a S4-S5 linker acting as a rigid mechanical lever to open the gate. Progressive displacement of the split position from the end to the beginning of the S4-S5 linker induces an increasing negative shift in activation voltage dependence, a reduced z g value and a more negative ΔG 0 for current activation, an almost complete abolition of the activation time course sigmoid shape and a slowing of the voltage-dependent deactivation. Channels disconnected at the S4-S5 linker near the S4 helix show a destabilization of the closed state(s). Furthermore, the isochronal ion current mode shift magnitude is clearly reduced in the different splits. Interestingly, the progressive modifications of voltage dependence activation gating by changing the split position are accompanied by a shift in the voltage-dependent availability to a methanethiosulfonate reagent of a Cys introduced at the upper S4 helix. Our data demonstrate for the first time that alterations in the covalent connection between the voltage sensor and the pore domains impact on the structural reorganizations of the voltage sensor domain. Also, they support the hypothesis that the S4-S5 linker integrates signals coming from other cytoplasmic domains that constitute either an important component or a crucial regulator of the gating machinery in Kv11.1 and other KCNH channels.

  7. Mapping the receptor site for alpha-scorpion toxins on a Na+ channel voltage sensor.

    PubMed

    Wang, Jinti; Yarov-Yarovoy, Vladimir; Kahn, Roy; Gordon, Dalia; Gurevitz, Michael; Scheuer, Todd; Catterall, William A

    2011-09-13

    The α-scorpions toxins bind to the resting state of Na(+) channels and inhibit fast inactivation by interaction with a receptor site formed by domains I and IV. Mutants T1560A, F1610A, and E1613A in domain IV had lower affinities for Leiurus quinquestriatus hebraeus toxin II (LqhII), and mutant E1613R had ~73-fold lower affinity. Toxin dissociation was accelerated by depolarization and increased by these mutations, whereas association rates at negative membrane potentials were not changed. These results indicate that Thr1560 in the S1-S2 loop, Phe1610 in the S3 segment, and Glu1613 in the S3-S4 loop in domain IV participate in toxin binding. T393A in the SS2-S6 loop in domain I also had lower affinity for LqhII, indicating that this extracellular loop may form a secondary component of the receptor site. Analysis with the Rosetta-Membrane algorithm resulted in a model of LqhII binding to the voltage sensor in a resting state, in which amino acid residues in an extracellular cleft formed by the S1-S2 and S3-S4 loops in domain IV interact with two faces of the wedge-shaped LqhII molecule. The conserved gating charges in the S4 segment are in an inward position and form ion pairs with negatively charged amino acid residues in the S2 and S3 segments of the voltage sensor. This model defines the structure of the resting state of a voltage sensor of Na(+) channels and reveals its mode of interaction with a gating modifier toxin.

  8. Electro-optic voltage sensor head

    DOEpatents

    Crawford, T.M.; Davidson, J.R.; Woods, G.K.

    1999-08-17

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers. 6 figs.

  9. Electro-optic voltage sensor head

    DOEpatents

    Crawford, Thomas M.; Davidson, James R.; Woods, Gregory K.

    1999-01-01

    The invention is an electro-optic voltage sensor head designed for integration with existing types of high voltage transmission and distribution apparatus. The sensor head contains a transducer, which comprises a transducing material in which the Pockels electro-optic effect is observed. In the practice of the invention at least one beam of electromagnetic radiation is routed into the transducing material of the transducer in the sensor head. The beam undergoes an electro-optic effect in the sensor head when the transducing material is subjected to an E-field. The electro-optic effect is observed as a differential phase a shift, also called differential phase modulation, of the beam components in orthogonal planes of the electromagnetic radiation. In the preferred embodiment the beam is routed through the transducer along an initial axis and then reflected by a retro-reflector back substantially parallel to the initial axis, making a double pass through the transducer for increased measurement sensitivity. The preferred embodiment of the sensor head also includes a polarization state rotator and at least one beam splitter for orienting the beam along major and minor axes and for splitting the beam components into two signals which are independent converse amplitude-modulated signals carrying E-field magnitude and hence voltage information from the sensor head by way of optic fibers.

  10. Electro-optic voltage sensor with Multiple Beam Splitting

    DOEpatents

    Woods, Gregory K.; Renak, Todd W.; Crawford, Thomas M.; Davidson, James R.

    2000-01-01

    A miniature electro-optic voltage sensor system capable of accurate operation at high voltages without use of the dedicated voltage dividing hardware. The invention achieves voltage measurement without significant error contributions from neighboring conductors or environmental perturbations. The invention employs a transmitter, a sensor, a detector, and a signal processor. The transmitter produces a beam of electromagnetic radiation which is routed into the sensor. Within the sensor the beam undergoes the Pockels electro-optic effect. The electro-optic effect produces a modulation of the beam's polarization, which is in turn converted to a pair of independent conversely-amplitude-modulated signals, from which the voltage of the E-field is determined by the signal processor. The use of converse AM signals enables the signal processor to better distinguish signal from noise. The sensor converts the beam by splitting the beam in accordance with the axes of the beam's polarization state (an ellipse) into at least two AM signals. These AM signals are fed into a signal processor and processed to determine the voltage between a ground conductor and the conductor on which voltage is being measured.

  11. Voltage-Dependent Gating of hERG Potassium Channels

    PubMed Central

    Cheng, Yen May; Claydon, Tom W.

    2012-01-01

    The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

  12. Common molecular determinants of tarantula huwentoxin-IV inhibition of Na+ channel voltage sensors in domains II and IV.

    PubMed

    Xiao, Yucheng; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2011-08-05

    The voltage sensors of domains II and IV of sodium channels are important determinants of activation and inactivation, respectively. Animal toxins that alter electrophysiological excitability of muscles and neurons often modify sodium channel activation by selectively interacting with domain II and inactivation by selectively interacting with domain IV. This suggests that there may be substantial differences between the toxin-binding sites in these two important domains. Here we explore the ability of the tarantula huwentoxin-IV (HWTX-IV) to inhibit the activity of the domain II and IV voltage sensors. HWTX-IV is specific for domain II, and we identify five residues in the S1-S2 (Glu-753) and S3-S4 (Glu-811, Leu-814, Asp-816, and Glu-818) regions of domain II that are crucial for inhibition of activation by HWTX-IV. These data indicate that a single residue in the S3-S4 linker (Glu-818 in hNav1.7) is crucial for allowing HWTX-IV to interact with the other key residues and trap the voltage sensor in the closed configuration. Mutagenesis analysis indicates that the five corresponding residues in domain IV are all critical for endowing HWTX-IV with the ability to inhibit fast inactivation. Our data suggest that the toxin-binding motif in domain II is conserved in domain IV. Increasing our understanding of the molecular determinants of toxin interactions with voltage-gated sodium channels may permit development of enhanced isoform-specific voltage-gating modifiers.

  13. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2003-09-16

    A small sized electro-optic voltage sensor capable of accurate measurement of high voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation. A polarization beam displacer separates the input beam into two beams with orthogonal linear polarizations and causes one linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels effect elliptically polarizes the beam as it travels through the crystal. A reflector redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization. The system may include a detector for converting the output beams into electrical signals and a signal processor for determining the voltage based on an analysis of the output beams.

  14. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels

    PubMed Central

    Zhang, Guohui; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L.; Salkoff, Lawrence

    2017-01-01

    Large conductance Ca2+-activated K+ channels (BK channels) gate open in response to both membrane voltage and intracellular Ca2+. The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca2+ sensor. How these voltage and Ca2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA. http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel’s β1 and β2 subunits. PMID:28196879

  15. Molecular Dynamics Simulations of Voltage-Gated Cation Channels: Insights on Voltage-Sensor Domain Function and Modulation

    PubMed Central

    Delemotte, Lucie; Klein, Michael L.; Tarek, Mounir

    2012-01-01

    Since their discovery in the 1950s, the structure and function of voltage-gated cation channels (VGCC) has been largely understood thanks to results stemming from electrophysiology, pharmacology, spectroscopy, and structural biology. Over the past decade, computational methods such as molecular dynamics (MD) simulations have also contributed, providing molecular level information that can be tested against experimental results, thereby allowing the validation of the models and protocols. Importantly, MD can shed light on elements of VGCC function that cannot be easily accessed through “classical” experiments. Here, we review the results of recent MD simulations addressing key questions that pertain to the function and modulation of the VGCC’s voltage-sensor domain (VSD) highlighting: (1) the movement of the S4-helix basic residues during channel activation, articulating how the electrical driving force acts upon them; (2) the nature of the VSD intermediate states on transitioning between open and closed states of the VGCC; and (3) the molecular level effects on the VSD arising from mutations of specific S4 positively charged residues involved in certain genetic diseases. PMID:22654756

  16. Design and Simulation Test of an Open D-Dot Voltage Sensor

    PubMed Central

    Bai, Yunjie; Wang, Jingang; Wei, Gang; Yang, Yongming

    2015-01-01

    Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation. PMID:26393590

  17. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

    PubMed

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar; Akemann, Walther; Knöpfel, Thomas

    2008-06-25

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

  18. Reduced voltage sensitivity in a K+-channel voltage sensor by electric field remodeling

    PubMed Central

    González-Pérez, Vivian; Stack, Katherine; Boric, Katica; Naranjo, David

    2010-01-01

    Propagation of the nerve impulse relies on the extreme voltage sensitivity of Na+ and K+ channels. The transmembrane movement of four arginine residues, located at the fourth transmembrane segment (S4), in each of their four voltage-sensing domains is mostly responsible for the translocation of 12 to 13 eo across the transmembrane electric field. Inserting additional positively charged residues between the voltage-sensing arginines in S4 would, in principle, increase voltage sensitivity. Here we show that either positively or negatively charged residues added between the two most external sensing arginines of S4 decreased voltage sensitivity of a Shaker voltage-gated K+-channel by up to ≈50%. The replacement of Val363 with a charged residue displaced inwardly the external boundaries of the electric field by at least 6 Å, leaving the most external arginine of S4 constitutively exposed to the extracellular space and permanently excluded from the electric field. Both the physical trajectory of S4 and its electromechanical coupling to open the pore gate seemed unchanged. We propose that the separation between the first two sensing charges at resting is comparable to the thickness of the low dielectric transmembrane barrier they must cross. Thus, at most a single sensing arginine side chain could be found within the field. The conserved hydrophobic nature of the residues located between the voltage-sensing arginines in S4 may shape the electric field geometry for optimal voltage sensitivity in voltage-gated ion channels. PMID:20194763

  19. Electrooptic polymer voltage sensor and method of manufacture thereof

    NASA Technical Reports Server (NTRS)

    Gottsche, Allan (Inventor); Perry, Joseph W. (Inventor)

    1993-01-01

    An optical voltage sensor utilizing an electrooptic polymer is disclosed for application to electric power distribution systems. The sensor, which can be manufactured at low cost in accordance with a disclosed method, measures voltages across a greater range than prior art sensors. The electrooptic polymer, which replaces the optical crystal used in prior art sensors, is sandwiched directly between two high voltage electrodes. Voltage is measured by fiber optical means, and no voltage division is required. The sample of electrooptic polymer is fabricated in a special mold and later mounted in a sensor housing. Alternatively, mold and sensor housing may be identical. The sensor housing is made out of a machinable polymeric material and is equipped with two opposing optical windows. The optical windows are mounted in the bottom of machined holes in the wall of the mold. These holes provide for mounting of the polarizing optical components and for mounting of the fiber optic connectors. One connecting fiber is equipped with a light emitting diode as a light source. Another connecting fiber is equipped with a photodiode as a detector.

  20. Interactions among DIV voltage-sensor movement, fast inactivation, and resurgent Na current induced by the NaVβ4 open-channel blocking peptide

    PubMed Central

    Lewis, Amanda H.

    2013-01-01

    Resurgent Na current flows as voltage-gated Na channels recover through open states from block by an endogenous open-channel blocking protein, such as the NaVβ4 subunit. The open-channel blocker and fast-inactivation gate apparently compete directly, as slowing the onset of fast inactivation increases resurgent currents by favoring binding of the blocker. Here, we tested whether open-channel block is also sensitive to deployment of the DIV voltage sensor, which facilitates fast inactivation. We expressed NaV1.4 channels in HEK293t cells and assessed block by a free peptide replicating the cytoplasmic tail of NaVβ4 (the “β4 peptide”). Macroscopic fast inactivation was disrupted by mutations of DIS6 (L443C/A444W; “CW” channels), which reduce fast-inactivation gate binding, and/or by the site-3 toxin ATX-II, which interferes with DIV movement. In wild-type channels, the β4 peptide competed poorly with fast inactivation, but block was enhanced by ATX. With the CW mutation, large peptide-induced resurgent currents were present even without ATX, consistent with increased open-channel block upon depolarization and slower deactivation after blocker unbinding upon repolarization. The addition of ATX greatly increased transient current amplitudes and further enlarged resurgent currents, suggesting that pore access by the blocker is actually decreased by full deployment of the DIV voltage sensor. ATX accelerated recovery from block at hyperpolarized potentials, however, suggesting that the peptide unbinds more readily when DIV voltage-sensor deployment is disrupted. These results are consistent with two open states in Na channels, dependent on the DIV voltage-sensor position, which differ in affinity for the blocking protein. PMID:23940261

  1. Outward stabilization of the voltage sensor in domain II but not domain I speeds inactivation of voltage-gated sodium channels.

    PubMed

    Sheets, Michael F; Chen, Tiehua; Hanck, Dorothy A

    2013-10-15

    To determine the roles of the individual S4 segments in domains I and II to activation and inactivation kinetics of sodium current (INa) in NaV1.5, we used a tethered biotin and avidin approach after a site-directed cysteine substitution was made in the second outermost Arg in each S4 (DI-R2C and DII-R2C). We first determined the fraction of gating charge contributed by the individual S4's to maximal gating current (Qmax), and found that the outermost Arg residue in each S4 contributed ∼19% to Qmax with minimal contributions by other arginines. Stabilization of the S4's in DI-R2C and DII-R2C was confirmed by measuring the expected reduction in Qmax. In DI-R2C, stabilization resulted in a decrease in peak INa of ∼45%, while its peak current-voltage (I-V) and voltage-dependent Na channel availability (SSI) curves were nearly unchanged from wild type (WT). In contrast, stabilization of the DII-R2C enhanced activation with a negative shift in the peak I-V relationship by -7 mV and a larger -17 mV shift in the voltage-dependent SSI curve. Furthermore, its INa decay time constants and time-to-peak INa became more rapid than WT. An explanation for these results is that the depolarized conformation of DII-S4, but not DI-S4, affects the receptor for the inactivation particle formed by the interdomain linker between DIII and IV. In addition, the leftward shifts of both activation and inactivation and the decrease in Gmax after stabilization of the DII-S4 support previous studies that showed β-scorpion toxins trap the voltage sensor of DII in an activated conformation.

  2. Constraints on voltage sensor movement in the shaker K+ channel.

    PubMed

    Darman, Rachel B; Ivy, Allison A; Ketty, Vina; Blaustein, Robert O

    2006-12-01

    In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12-14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K(+) channel KvAP, a "voltage-sensor paddle" comprising a helix-turn-helix of S3-S4 translocates approximately 20 A through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33-41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42-48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463-475). We used two methods to test for analogous motions in the Shaker K(+) channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309-311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483-7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158-161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues against

  3. Mapping of voltage sensor positions in resting and inactivated mammalian sodium channels by LRET

    PubMed Central

    Kubota, Tomoya; Durek, Thomas; Dang, Bobo; Finol-Urdaneta, Rocio K.; Craik, David J.; Kent, Stephen B. H.; French, Robert J.; Bezanilla, Francisco; Correa, Ana M.

    2017-01-01

    Voltage-gated sodium channels (Navs) play crucial roles in excitable cells. Although vertebrate Nav function has been extensively studied, the detailed structural basis for voltage-dependent gating mechanisms remain obscure. We have assessed the structural changes of the Nav voltage sensor domain using lanthanide-based resonance energy transfer (LRET) between the rat skeletal muscle voltage-gated sodium channel (Nav1.4) and fluorescently labeled Nav1.4-targeting toxins. We generated donor constructs with genetically encoded lanthanide-binding tags (LBTs) inserted at the extracellular end of the S4 segment of each domain (with a single LBT per construct). Three different Bodipy-labeled, Nav1.4-targeting toxins were synthesized as acceptors: β-scorpion toxin (Ts1)-Bodipy, KIIIA-Bodipy, and GIIIA-Bodipy analogs. Functional Nav-LBT channels expressed in Xenopus oocytes were voltage-clamped, and distinct LRET signals were obtained in the resting and slow inactivated states. Intramolecular distances computed from the LRET signals define a geometrical map of Nav1.4 with the bound toxins, and reveal voltage-dependent structural changes related to channel gating. PMID:28202723

  4. Mapping of voltage sensor positions in resting and inactivated mammalian sodium channels by LRET.

    PubMed

    Kubota, Tomoya; Durek, Thomas; Dang, Bobo; Finol-Urdaneta, Rocio K; Craik, David J; Kent, Stephen B H; French, Robert J; Bezanilla, Francisco; Correa, Ana M

    2017-03-07

    Voltage-gated sodium channels (Navs) play crucial roles in excitable cells. Although vertebrate Nav function has been extensively studied, the detailed structural basis for voltage-dependent gating mechanisms remain obscure. We have assessed the structural changes of the Nav voltage sensor domain using lanthanide-based resonance energy transfer (LRET) between the rat skeletal muscle voltage-gated sodium channel (Nav1.4) and fluorescently labeled Nav1.4-targeting toxins. We generated donor constructs with genetically encoded lanthanide-binding tags (LBTs) inserted at the extracellular end of the S4 segment of each domain (with a single LBT per construct). Three different Bodipy-labeled, Nav1.4-targeting toxins were synthesized as acceptors: β-scorpion toxin (Ts1)-Bodipy, KIIIA-Bodipy, and GIIIA-Bodipy analogs. Functional Nav-LBT channels expressed in Xenopus oocytes were voltage-clamped, and distinct LRET signals were obtained in the resting and slow inactivated states. Intramolecular distances computed from the LRET signals define a geometrical map of Nav1.4 with the bound toxins, and reveal voltage-dependent structural changes related to channel gating.

  5. Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

    PubMed

    Capes, Deborah L; Goldschen-Ohm, Marcel P; Arcisio-Miranda, Manoel; Bezanilla, Francisco; Chanda, Baron

    2013-08-01

    Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

  6. A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

    PubMed

    Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

    2016-03-01

    Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Optical fiber voltage sensors for broad temperature ranges

    NASA Technical Reports Server (NTRS)

    Rose, A. H.; Day, G. W.

    1992-01-01

    We describe the development of an optical fiber ac voltage sensor for aircraft and spacecraft applications. Among the most difficult specifications to meet for this application is a temperature stability of +/- 1 percent from -65 C to +125 C. This stability requires a careful selection of materials, components, and optical configuration with further compensation using an optical-fiber temperature sensor located near the sensing element. The sensor is a polarimetric design, based on the linear electro-optic effect in bulk Bi4Ge3O12. The temperature sensor is also polarimetric, based on the temperature dependence of the birefringence of bulk SiO2. The temperature sensor output is used to automatically adjust the calibration of the instrument.

  8. Electro-optic high voltage sensor

    DOEpatents

    Davidson, James R.; Seifert, Gary D.

    2002-01-01

    A small sized electro-optic voltage sensor capable of accurate measurement of high levels of voltages without contact with a conductor or voltage source is provided. When placed in the presence of an electric field, the sensor receives an input beam of electromagnetic radiation into the sensor. A polarization beam displacer serves as a filter to separate the input beam into two beams with orthogonal linear polarizations. The beam displacer is oriented in such a way as to rotate the linearly polarized beams such that they enter a Pockels crystal having at a preferred angle of 45 degrees. The beam displacer is therefore capable of causing a linearly polarized beam to impinge a crystal at a desired angle independent of temperature. The Pockels electro-optic effect induces a differential phase shift on the major and minor axes of the input beam as it travels through the Pockels crystal, which causes the input beam to be elliptically polarized. A reflecting prism redirects the beam back through the crystal and the beam displacer. On the return path, the polarization beam displacer separates the elliptically polarized beam into two output beams of orthogonal linear polarization representing the major and minor axes. The system may include a detector for converting the output beams into electrical signals, and a signal processor for determining the voltage based on an analysis of the output beams. The output beams are amplitude modulated by the frequency of the electric field and the amplitude of the output beams is proportional to the magnitude of the electric field, which is related to the voltage being measured.

  9. Tarantula huwentoxin-IV inhibits neuronal sodium channels by binding to receptor site 4 and trapping the domain ii voltage sensor in the closed configuration.

    PubMed

    Xiao, Yucheng; Bingham, Jon-Paul; Zhu, Weiguo; Moczydlowski, Edward; Liang, Songping; Cummins, Theodore R

    2008-10-03

    Peptide toxins with high affinity, divergent pharmacological functions, and isoform-specific selectivity are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a number of interesting inhibitors have been reported from tarantula venoms, little is known about the mechanism for their interaction with VGSCs. We show that huwentoxin-IV (HWTX-IV), a 35-residue peptide from tarantula Ornithoctonus huwena venom, preferentially inhibits neuronal VGSC subtypes rNav1.2, rNav1.3, and hNav1.7 compared with muscle subtypes rNav1.4 and hNav1.5. Of the five VGSCs examined, hNav1.7 was most sensitive to HWTX-IV (IC(50) approximately 26 nM). Following application of 1 microm HWTX-IV, hNav1.7 currents could only be elicited with extreme depolarizations (>+100 mV). Recovery of hNav1.7 channels from HWTX-IV inhibition could be induced by extreme depolarizations or moderate depolarizations lasting several minutes. Site-directed mutagenesis analysis indicated that the toxin docked at neurotoxin receptor site 4 located at the extracellular S3-S4 linker of domain II. Mutations E818Q and D816N in hNav1.7 decreased toxin affinity for hNav1.7 by approximately 300-fold, whereas the reverse mutations in rNav1.4 (N655D/Q657E) and the corresponding mutations in hNav1.5 (R812D/S814E) greatly increased the sensitivity of the muscle VGSCs to HWTX-IV. Our data identify a novel mechanism for sodium channel inhibition by tarantula toxins involving binding to neurotoxin receptor site 4. In contrast to scorpion beta-toxins that trap the IIS4 voltage sensor in an outward configuration, we propose that HWTX-IV traps the voltage sensor of domain II in the inward, closed configuration.

  10. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    NASA Astrophysics Data System (ADS)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  11. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    PubMed

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  12. Constraints on Voltage Sensor Movement in the Shaker K+ Channel

    PubMed Central

    Darman, Rachel B.; Ivy, Allison A.; Ketty, Vina; Blaustein, Robert O.

    2006-01-01

    In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12–14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K+ channel KvAP, a “voltage-sensor paddle” comprising a helix-turn-helix of S3–S4 translocates ∼20 Å through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33–41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42–48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463–475). We used two methods to test for analogous motions in the Shaker K+ channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309–311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483–7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158–161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues

  13. Multiple pore conformations driven by asynchronous movements of voltage sensors in a eukaryotic sodium channel

    PubMed Central

    Goldschen-Ohm, Marcel P.; Capes, Deborah L.; Oelstrom, Kevin M.; Chanda, Baron

    2013-01-01

    Voltage-dependent Na+ channels are crucial for electrical signalling in excitable cells. Membrane depolarization initiates asynchronous movements in four non-identical voltage-sensing domains of the Na+ channel. It remains unclear to what extent this structural asymmetry influences pore gating as compared with outwardly rectifying K+ channels, where channel opening results from a final concerted transition of symmetric pore gates. Here we combine single channel recordings, cysteine accessibility and voltage clamp fluorimetry to probe the relationships between voltage sensors and pore conformations in an inactivation deficient Nav1.4 channel. We observe three distinct conductance levels such that DI-III voltage sensor activation is kinetically correlated with formation of a fully open pore, whereas DIV voltage sensor movement underlies formation of a distinct subconducting pore conformation preceding inactivation in wild-type channels. Our experiments reveal that pore gating in sodium channels involves multiple transitions driven by asynchronous movements of voltage sensors. These findings shed new light on the mechanism of coupling between activation and fast inactivation in voltage-gated sodium channels. PMID:23322038

  14. Mechanism of Electromechanical Coupling in Voltage-Gated Potassium Channels

    PubMed Central

    Blunck, Rikard; Batulan, Zarah

    2012-01-01

    Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium, or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv) undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt, and vertical displacement in order to bring 3–4e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy, and molecular dynamics simulations. Evidently, the S4S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i) an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii) insight as to how the voltage sensor and pore domain influence one another; and (iii) theoretical predictions on the movement of the cytosolic face of the Kv channels during

  15. High-voltage pixel sensors for ATLAS upgrade

    NASA Astrophysics Data System (ADS)

    Perić, I.; Kreidl, C.; Fischer, P.; Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M.; Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B.; Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A.; Nessi, M.; Iacobucci, G.; Backhaus, M.; Hügging, Fabian; Krüger, H.; Hemperek, T.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Quadt, A.; Weingarten, J.; George, M.; Grosse-Knetter, J.; Rieger, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.

    2014-11-01

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  16. Neutralisation of a single voltage sensor affects gating determinants in all four pore-forming S6 segments of Ca(V)1.2: a cooperative gating model.

    PubMed

    Beyl, Stanislav; Depil, Katrin; Hohaus, Annette; Stary-Weinzinger, Anna; Linder, Tobias; Timin, Eugen; Hering, Steffen

    2012-10-01

    Voltage sensors trigger the closed-open transitions in the pore of voltage-gated ion channels. To probe the transmission of voltage sensor signalling to the channel pore of Ca(V)1.2, we investigated how elimination of positive charges in the S4 segments (charged residues were replaced by neutral glutamine) modulates gating perturbations induced by mutations in pore-lining S6 segments. Neutralisation of all positively charged residues in IIS4 produced a functional channel (IIS4(N)), while replacement of the charged residues in IS4, IIIS4 and IVS4 segments resulted in nonfunctional channels. The IIS4(N) channel displayed activation kinetics similar to wild type. Mutations in a highly conserved structure motif on S6 segments ("GAGA ring": G432W in IS6, A780T in IIS6, G1193T in IIIS6 and A1503G in IVS6) induce strong left-shifted activation curves and decelerated channel deactivation kinetics. When IIS4(N) was combined with these mutations, the activation curves were shifted back towards wild type and current kinetics were accelerated. In contrast, 12 other mutations adjacent to the GAGA ring in IS6-IVS6, which also affect activation gating, were not rescued by IIS4(N). Thus, the rescue of gating distortions in segments IS6-IVS6 by IIS4(N) is highly position-specific. Thermodynamic cycle analysis supports the hypothesis that IIS4 is energetically coupled with the distantly located GAGA residues. We speculate that conformational changes caused by neutralisation of IIS4 are not restricted to domain II (IIS6) but are transmitted to gating structures in domains I, III and IV via the GAGA ring.

  17. Structure of the voltage-gated K⁺ channel Eag1 reveals an alternative voltage sensing mechanism.

    PubMed

    Whicher, Jonathan R; MacKinnon, Roderick

    2016-08-12

    Voltage-gated potassium (K(v)) channels are gated by the movement of the transmembrane voltage sensor, which is coupled, through the helical S4-S5 linker, to the potassium pore. We determined the single-particle cryo-electron microscopy structure of mammalian K(v)10.1, or Eag1, bound to the channel inhibitor calmodulin, at 3.78 angstrom resolution. Unlike previous K(v) structures, the S4-S5 linker of Eag1 is a five-residue loop and the transmembrane segments are not domain swapped, which suggest an alternative mechanism of voltage-dependent gating. Additionally, the structure and position of the S4-S5 linker allow calmodulin to bind to the intracellular domains and to close the potassium pore, independent of voltage-sensor position. The structure reveals an alternative gating mechanism for K(v) channels and provides a template to further understand the gating properties of Eag1 and related channels. Copyright © 2016, American Association for the Advancement of Science.

  18. Combinatorial mutagenesis of the voltage-sensing domain enables the optical resolution of action potentials firing at 60 Hz by a genetically encoded fluorescent sensor of membrane potential.

    PubMed

    Piao, Hong Hua; Rajakumar, Dhanarajan; Kang, Bok Eum; Kim, Eun Ha; Baker, Bradley J

    2015-01-07

    ArcLight is a genetically encoded fluorescent voltage sensor using the voltage-sensing domain of the voltage-sensing phosphatase from Ciona intestinalis that gives a large but slow-responding optical signal in response to changes in membrane potential (Jin et al., 2012). Fluorescent voltage sensors using the voltage-sensing domain from other species give faster yet weaker optical signals (Baker et al., 2012; Han et al., 2013). Sequence alignment of voltage-sensing phosphatases from different species revealed conserved polar and charged residues at 7 aa intervals in the S1-S3 transmembrane segments of the voltage-sensing domain, suggesting potential coil-coil interactions. The contribution of these residues to the voltage-induced optical signal was tested using a cassette mutagenesis screen by flanking each transmembrane segment with unique restriction sites to allow for the testing of individual mutations in each transmembrane segment, as well as combinations in all four transmembrane segments. Addition of a counter charge in S2 improved the kinetics of the optical response. A double mutation in the S4 domain dramatically reduced the slow component of the optical signal seen in ArcLight. Combining that double S4 mutant with the mutation in the S2 domain yielded a probe with kinetics <10 ms. Optimization of the linker sequence between S4 and the fluorescent protein resulted in a new ArcLight-derived probe, Bongwoori, capable of resolving action potentials in a hippocampal neuron firing at 60 Hz. Additional manipulation of the voltage-sensing domain could potentially lead to fluorescent sensors capable of optically resolving neuronal inhibition and subthreshold synaptic activity. Copyright © 2015 the authors 0270-6474/15/350372-15$15.00/0.

  19. Deletion of the S3–S4 Linker in theShaker Potassium Channel Reveals Two Quenching Groups near the outside of S4

    PubMed Central

    Sørensen, J.B.; Cha, A.; Latorre, R.; Rosenman, E.; Bezanilla, F.

    2000-01-01

    When attached outside the voltage-sensing S4 segment of the Shaker potassium channel, the fluorescent probe tetramethylrhodamine (TMRM) undergoes voltage-dependent fluorescence changes (ΔF) due to differential interaction with a pH-titratable external protein-lined vestibule (Cha, A., and F. Bezanilla. 1998. J. Gen. Physiol. 112:391–408.). We attached TMRM at the same sites [corresponding to M356C and A359C in the wild-type (wt) channel] in a deletion mutant of Shaker where all but the five amino acids closest to S4 had been removed from the S3–S4 linker. In the deletion mutant, the maximal ΔF/F seen was diminished 10-fold, and the ΔF at M356C became pH independent, suggesting that the protein-lined vestibule is made up in large part by the S3–S4 linker. The residual ΔF showed that the probe still interacted with two putative quenching groups near the S4 segment. One group was detected by M356C-TMRM (located outside of S3 in the deletion mutant) and reported on deactivation gating charge movement when applying hyperpolarizing voltage steps from a holding potential of 0 mV. During activating voltage steps from a holding potential of −90 mV, the fluorescence lagged considerably behind the movement of gating charge over a range of potentials. Another putative quenching group was seen by probes attached closer to the S4 and caused a ΔF at extreme hyperpolarizations (more negative than −90 mV) only. A signal from the interaction with this group in the wt S3–S4 linker channel (at L361C) correlated with gating charge moving in the hyperpolarized part of the Q-V curve. Probe attached at A359C in the deletion mutant and at L361C in wt channel showed a biphasic ΔF as the probe oscillated between the two groups, revealing that there is a transient state of the voltage sensor in between, where the probe has maximal fluorescence. We conclude that the voltage sensor undergoes two distinct conformational changes as seen from probes attached outside the S4

  20. Integrative Approach with Electrophysiological and Theoretical Methods Reveals a New Role of S4 Positively Charged Residues in PKD2L1 Channel Voltage-Sensing.

    PubMed

    Numata, Tomohiro; Tsumoto, Kunichika; Yamada, Kazunori; Kurokawa, Tatsuki; Hirose, Shinichi; Nomura, Hideki; Kawano, Mitsuhiro; Kurachi, Yoshihisa; Inoue, Ryuji; Mori, Yasuo

    2017-08-29

    Numerical model-based simulations provide important insights into ion channel gating when experimental limitations exist. Here, a novel strategy combining numerical simulations with patch clamp experiments was used to investigate the net positive charges in the putative transmembrane segment 4 (S4) of the atypical, positively-shifted voltage-dependence of polycystic kidney disease 2-like 1 (PKD2L1) channel. Charge-neutralising mutations (K452Q, K455Q and K461Q) in S4 reduced gating charges, positively shifted the Boltzmann-type activation curve [i.e., open probability (P open )-V curve] and altered the time-courses of activation/deactivation of PKD2L1, indicating that this region constitutes part of a voltage sensor. Numerical reconstruction of wild-type (WT) and mutant PKD2L1-mediated currents necessitated, besides their voltage-dependent gating parameters, a scaling factor that describes the voltage-dependence of maximal conductance, G max . Subsequent single-channel conductance (γ) measurements revealed that voltage-dependence of G max in WT can be explained by the inward-rectifying property of γ, which is greatly changed in PKD2L1 mutants. Homology modelling based on PKD2 and Na V Ab structures suggest that such voltage dependence of P open and γ in PKD2L1 could both reflect the charged state of the S4 domain. The present conjunctive experimental and theoretical approaches provide a framework to explore the undetermined mechanism(s) regulating TRP channels that possess non-classical voltage-dependent properties.

  1. A limited 4 Å radial displacement of the S4-S5 linker is sufficient for internal gate closing in Kv channels.

    PubMed

    Faure, Élise; Starek, Greg; McGuire, Hugo; Bernèche, Simon; Blunck, Rikard

    2012-11-16

    Voltage-gated ion channels are responsible for the generation of action potentials in our nervous system. Conformational rearrangements in their voltage sensor domains in response to changes of the membrane potential control pore opening and thus ion conduction. Crystal structures of the open channel in combination with a wealth of biophysical data and molecular dynamics simulations led to a consensus on the voltage sensor movement. However, the coupling between voltage sensor movement and pore opening, the electromechanical coupling, occurs at the cytosolic face of the channel, from where no structural information is available yet. In particular, the question how far the cytosolic pore gate has to close to prevent ion conduction remains controversial. In cells, spectroscopic methods are hindered because labeling of internal sites remains difficult, whereas liposomes or detergent solutions containing purified ion channels lack voltage control. Here, to overcome these problems, we controlled the state of the channel by varying the lipid environment. This way, we directly measured the position of the S4-S5 linker in both the open and the closed state of a prokaryotic Kv channel (KvAP) in a lipid environment using Lanthanide-based resonance energy transfer. We were able to reconstruct the movement of the covalent link between the voltage sensor and the pore domain and used this information as restraints for molecular dynamics simulations of the closed state structure. We found that a small decrease of the pore radius of about 3-4 Å is sufficient to prevent ion permeation through the pore.

  2. Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

    PubMed Central

    Lörinczi, Éva; Gómez-Posada, Juan Camilo; de la Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

    2015-01-01

    Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules. PMID:25818916

  3. Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains.

    PubMed

    Lörinczi, Éva; Gómez-Posada, Juan Camilo; de la Peña, Pilar; Tomczak, Adam P; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A

    2015-03-30

    Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

  4. Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

    NASA Astrophysics Data System (ADS)

    Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

    2015-03-01

    Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

  5. Scorpion β-toxin interference with NaV channel voltage sensor gives rise to excitatory and depressant modes

    PubMed Central

    Leipold, Enrico; Borges, Adolfo

    2012-01-01

    Scorpion β toxins, peptides of ∼70 residues, specifically target voltage-gated sodium (NaV) channels to cause use-dependent subthreshold channel openings via a voltage–sensor trapping mechanism. This excitatory action is often overlaid by a not yet understood depressant mode in which NaV channel activity is inhibited. Here, we analyzed these two modes of gating modification by β-toxin Tz1 from Tityus zulianus on heterologously expressed NaV1.4 and NaV1.5 channels using the whole cell patch-clamp method. Tz1 facilitated the opening of NaV1.4 in a use-dependent manner and inhibited channel opening with a reversed use dependence. In contrast, the opening of NaV1.5 was exclusively inhibited without noticeable use dependence. Using chimeras of NaV1.4 and NaV1.5 channels, we demonstrated that gating modification by Tz1 depends on the specific structure of the voltage sensor in domain 2. Although residue G658 in NaV1.4 promotes the use-dependent transitions between Tz1 modification phenotypes, the equivalent residue in NaV1.5, N803, abolishes them. Gating charge neutralizations in the NaV1.4 domain 2 voltage sensor identified arginine residues at positions 663 and 669 as crucial for the outward and inward movement of this sensor, respectively. Our data support a model in which Tz1 can stabilize two conformations of the domain 2 voltage sensor: a preactivated outward position leading to NaV channels that open at subthreshold potentials, and a deactivated inward position preventing channels from opening. The results are best explained by a two-state voltage–sensor trapping model in that bound scorpion β toxin slows the activation as well as the deactivation kinetics of the voltage sensor in domain 2. PMID:22450487

  6. A distinct sodium channel voltage-sensor locus determines insect selectivity of the spider toxin Dc1a.

    PubMed

    Bende, Niraj S; Dziemborowicz, Sławomir; Mobli, Mehdi; Herzig, Volker; Gilchrist, John; Wagner, Jordan; Nicholson, Graham M; King, Glenn F; Bosmans, Frank

    2014-07-11

    β-Diguetoxin-Dc1a (Dc1a) is a toxin from the desert bush spider Diguetia canities that incapacitates insects at concentrations that are non-toxic to mammals. Dc1a promotes opening of German cockroach voltage-gated sodium (Nav) channels (BgNav1), whereas human Nav channels are insensitive. Here, by transplanting commonly targeted S3b-S4 paddle motifs within BgNav1 voltage sensors into Kv2.1, we find that Dc1a interacts with the domain II voltage sensor. In contrast, Dc1a has little effect on sodium currents mediated by PaNav1 channels from the American cockroach even though their domain II paddle motifs are identical. When exploring regions responsible for PaNav1 resistance to Dc1a, we identified two residues within the BgNav1 domain II S1-S2 loop that when mutated to their PaNav1 counterparts drastically reduce toxin susceptibility. Overall, our results reveal a distinct region within insect Nav channels that helps determine Dc1a sensitivity, a concept that will be valuable for the design of insect-selective insecticides.

  7. S3b amino acid residues do not shuttle across the bilayer in voltage-dependent Shaker K+ channels

    PubMed Central

    Gonzalez, Carlos; Morera, Francisco J.; Rosenmann, Eduardo; Alvarez, Osvaldo; Latorre, Ramon

    2005-01-01

    In voltage-dependent channels, positive charges contained within the S4 domain are the voltage-sensing elements. The “voltage-sensor paddle” gating mechanism proposed for the KvAP K+ channel has been the subject of intense discussion regarding its general applicability to the family of voltage-gated channels. In this model, the voltage sensor composed of the S3b and the S4 segment shuttles across the lipid bilayer during channel activation. Guided by this mechanism, we assessed here the accessibility of residues in the S3 segment of the Shaker K+ channel by using cysteine-scanning mutagenesis. Mutants expressed robust K+ currents in Xenopus oocytes and reacted with methanethiosulfonate ethyltrimethylammonium in both closed and open conformations of the channel. Because Shaker has a long S3–S4 linker segment, we generated a deletion mutant with only three residues to emulate the KvAP structure. In this short linker mutant, all of the tested residues in the S3b were accessible to methanethiosulfonate ethyltrimethylammonium in both closed and open conformations. Because the S3b moves together with the S4 domain in the paddle model, we tested the effects of deleting two negative charges or adding a positive charge to this region of the channel. We found that altering the S3b net charge does not modify the total gating charge involved in channel activation. We conclude that the S3b segment is always exposed to the external milieu of the Shaker K+ channel. Our results are incompatible with any model involving a large membrane displacement of segment S3b. PMID:15774578

  8. The output voltage model and experiment of magnetostrictive displacement sensor based on Weidemann effect

    NASA Astrophysics Data System (ADS)

    Wang, Bowen; Li, Yuanyuan; Xie, Xinliang; Huang, Wenmei; Weng, Ling; Zhang, Changgeng

    2018-05-01

    Based on the Wiedemann effect and inverse magnetostritive effect, the output voltage model of a magnetostrictive displacement sensor has been established. The output voltage of the magnetostrictive displacement sensor is calculated in different magnetic fields. It is found that the calculating result is in an agreement with the experimental one. The theoretical and experimental results show that the output voltage of the displacement sensor is linearly related to the magnetostrictive differences, (λl-λt), of waveguide wires. The measured output voltages for Fe-Ga and Fe-Ni wire sensors are 51.5mV and 36.5mV, respectively, and the output voltage of Fe-Ga wire sensor is obviously higher than that of Fe-Ni wire sensor under the same magnetic field. The model can be used to predict the output voltage of the sensor and to provide guidance for the optimization design of the sensor.

  9. Imaging Voltage in Genetically Defined Neuronal Subpopulations with a Cre Recombinase-Targeted Hybrid Voltage Sensor.

    PubMed

    Bayguinov, Peter O; Ma, Yihe; Gao, Yu; Zhao, Xinyu; Jackson, Meyer B

    2017-09-20

    Genetically encoded voltage indicators create an opportunity to monitor electrical activity in defined sets of neurons as they participate in the complex patterns of coordinated electrical activity that underlie nervous system function. Taking full advantage of genetically encoded voltage indicators requires a generalized strategy for targeting the probe to genetically defined populations of cells. To this end, we have generated a mouse line with an optimized hybrid voltage sensor (hVOS) probe within a locus designed for efficient Cre recombinase-dependent expression. Crossing this mouse with Cre drivers generated double transgenics expressing hVOS probe in GABAergic, parvalbumin, and calretinin interneurons, as well as hilar mossy cells, new adult-born neurons, and recently active neurons. In each case, imaging in brain slices from male or female animals revealed electrically evoked optical signals from multiple individual neurons in single trials. These imaging experiments revealed action potentials, dynamic aspects of dendritic integration, and trial-to-trial fluctuations in response latency. The rapid time response of hVOS imaging revealed action potentials with high temporal fidelity, and enabled accurate measurements of spike half-widths characteristic of each cell type. Simultaneous recording of rapid voltage changes in multiple neurons with a common genetic signature offers a powerful approach to the study of neural circuit function and the investigation of how neural networks encode, process, and store information. SIGNIFICANCE STATEMENT Genetically encoded voltage indicators hold great promise in the study of neural circuitry, but realizing their full potential depends on targeting the sensor to distinct cell types. Here we present a new mouse line that expresses a hybrid optical voltage sensor under the control of Cre recombinase. Crossing this line with Cre drivers generated double-transgenic mice, which express this sensor in targeted cell types. In

  10. Voltage-dependent K+ channel gating and voltage sensor toxin sensitivity depend on the mechanical state of the lipid membrane.

    PubMed

    Schmidt, Daniel; MacKinnon, Roderick

    2008-12-09

    Voltage-dependent K(+) (Kv) channels underlie action potentials through gating conformational changes that are driven by membrane voltage. In this study of the paddle chimera Kv channel, we demonstrate that the rate of channel opening, the voltage dependence of the open probability, and the maximum achievable open probability depend on the lipid membrane environment. The activity of the voltage sensor toxin VsTx1, which interferes with voltage-dependent gating by partitioning into the membrane and binding to the channel, also depends on the membrane. Membrane environmental factors that influence channel function are divisible into two general categories: lipid compositional and mechanical state. The mechanical state can have a surprisingly large effect on the function of a voltage-dependent K(+) channel, including its pharmacological interaction with voltage sensor toxins. The dependence of VSTx1 activity on the mechanical state of the membrane leads us to hypothesize that voltage sensor toxins exert their effect by perturbing the interaction forces that exist between the channel and the membrane.

  11. Hydrophobic interactions between the voltage sensor and pore mediate inactivation in Kv11.1 channels

    PubMed Central

    Perry, Matthew D.; Wong, Sophia; Ng, Chai Ann

    2013-01-01

    Kv11.1 channels are critical for the maintenance of a normal heart rhythm. The flow of potassium ions through these channels is controlled by two voltage-regulated gates, termed “activation” and “inactivation,” located at opposite ends of the pore. Crucially in Kv11.1 channels, inactivation gating occurs much more rapidly, and over a distinct range of voltages, compared with activation gating. Although it is clear that the fourth transmembrane segments (S4), within each subunit of the tetrameric channel, are important for controlling the opening and closing of the activation gate, their role during inactivation gating is much less clear. Here, we use rate equilibrium free energy relationship (REFER) analysis to probe the contribution of the S4voltage-sensor” helix during inactivation of Kv11.1 channels. Contrary to the important role that charged residues play during activation gating, it is the hydrophobic residues (Leu529, Leu530, Leu532, and Val535) that are the key molecular determinants of inactivation gating. Within the context of an interconnected multi-domain model of Kv11.1 inactivation gating, our REFER analysis indicates that the S4 helix and the S4S5 linker undergo a conformational rearrangement shortly after that of the S5 helix and S5P linker, but before the S6 helix. Combining REFER analysis with double mutant cycle analysis, we provide evidence for a hydrophobic interaction between residues on the S4 and S5 helices. Based on a Kv11.1 channel homology model, we propose that this hydrophobic interaction forms the basis of an intersubunit coupling between the voltage sensor and pore domain that is an important mediator of inactivation gating. PMID:23980196

  12. A Novel Voltage Sensor in the Orthosteric Binding Site of the M2 Muscarinic Receptor.

    PubMed

    Barchad-Avitzur, Ofra; Priest, Michael F; Dekel, Noa; Bezanilla, Francisco; Parnas, Hanna; Ben-Chaim, Yair

    2016-10-04

    G protein-coupled receptors (GPCRs) mediate many signal transduction processes in the body. The discovery that these receptors are voltage-sensitive has changed our understanding of their behavior. The M2 muscarinic acetylcholine receptor (M2R) was found to exhibit depolarization-induced charge movement-associated currents, implying that this prototypical GPCR possesses a voltage sensor. However, the typical domain that serves as a voltage sensor in voltage-gated channels is not present in GPCRs, making the search for the voltage sensor in the latter challenging. Here, we examine the M2R and describe a voltage sensor that is comprised of tyrosine residues. This voltage sensor is crucial for the voltage dependence of agonist binding to the receptor. The tyrosine-based voltage sensor discovered here constitutes a noncanonical by which membrane proteins may sense voltage. Copyright © 2016 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  13. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

    PubMed

    Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

    2017-03-06

    Large conductance Ca 2+ -activated K + channels (BK channels) gate open in response to both membrane voltage and intracellular Ca 2+ The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca 2+ sensor. How these voltage and Ca 2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca 2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca 2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits. © 2017 Zhang et al.

  14. Voltage-dependent K+ channel gating and voltage sensor toxin sensitivity depend on the mechanical state of the lipid membrane

    PubMed Central

    Schmidt, Daniel; MacKinnon, Roderick

    2008-01-01

    Voltage-dependent K+ (Kv) channels underlie action potentials through gating conformational changes that are driven by membrane voltage. In this study of the paddle chimera Kv channel, we demonstrate that the rate of channel opening, the voltage dependence of the open probability, and the maximum achievable open probability depend on the lipid membrane environment. The activity of the voltage sensor toxin VsTx1, which interferes with voltage-dependent gating by partitioning into the membrane and binding to the channel, also depends on the membrane. Membrane environmental factors that influence channel function are divisible into two general categories: lipid compositional and mechanical state. The mechanical state can have a surprisingly large effect on the function of a voltage-dependent K+ channel, including its pharmacological interaction with voltage sensor toxins. The dependence of VSTx1 activity on the mechanical state of the membrane leads us to hypothesize that voltage sensor toxins exert their effect by perturbing the interaction forces that exist between the channel and the membrane. PMID:19050073

  15. Electro-optic voltage sensor for sensing voltage in an E-field

    DOEpatents

    Davidson, James R.; Crawford, Thomas M.; Seifert, Gary D.

    2002-03-26

    A miniature electro-optic voltage sensor and system capable of accurate operation at high voltages has a sensor body disposed in an E-field. The body receives a source beam of electromagnetic radiation. A polarization beam displacer separates the source light beam into two beams with orthogonal linear polarizations. A wave plate rotates the linear polarization to rotated polarization. A transducer utilizes Pockels electro-optic effect and induces a differential phase shift on the major and minor axes of the rotated polarization in response to the E-field. A prism redirects the beam back through the transducer, wave plate, and polarization beam displacer. The prism also converts the rotated polarization to circular or elliptical polarization. The wave plate rotates the major and minor axes of the circular or elliptical polarization to linear polarization. The polarization beam displacer separates the beam into two beams of orthogonal linear polarization representing the major and minor axes. The system may have a transmitter for producing the beam of electro-magnetic radiation; a detector for converting the two beams into electrical signals; and a signal processor for determining the voltage.

  16. Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics

    NASA Astrophysics Data System (ADS)

    Jung, Soyoun; Ji, Taeksoo; Varadan, Vijay K.

    2007-12-01

    In this paper, gate-induced pentacene semiconductor strain sensors based on hybrid-gate dielectrics using poly-vinylphenol (PVP) and high-K inorganic, Ta IIO 5 are fabricated on flexible substrates, polyethylene naphthalate (PEN). The Ta IIO 5 gate dielectric layer is combined with a thin PVP layer to obtain very smooth and hydrophobic surfaces which improve the molecular structures of pentacene films. The PVP-Ta IIO 5 hybrid-gate dielectric films exhibit a high dielectric capacitance and low leakage current. The sensors adopting thin film transistor (TFT)-like structures show a significantly reduced operating voltage (~6V), and good device characteristics with a field-effect mobility of 1.89 cm2/V•s, a threshold voltage of -0.5 V, and an on/off ratio of 10 3. The strain sensor, one of the practical applications in large-area organic electronics, was characterized with different bending radii of 50, 40, 30, and 20 mm. The sensor output signals were significantly improved with low-operating voltages.

  17. A Spherical Electro Optic High Voltage Sensor

    DTIC Science & Technology

    1989-06-01

    electro - optic (EO) crystal is introduced for photonic measurement of pulsed high-voltage fields. A spherical shape is used in order to reduce electric field gradients in the vicinity of the sensor. The sensor is pure dielectric and is interrogated remotely using a laser. The sensor does not require the connection of any conducting components, which results in the highest electrical isolation. The spherical nature of the crystal coupled with the incident laser beam, and crossed polarizers (intensity modulation scheme). automatically produces interference figures. The

  18. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line

    PubMed Central

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-01-01

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid. PMID:26729119

  19. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

    PubMed

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-12-30

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  20. Phosphatidic acid modulation of Kv channel voltage sensor function.

    PubMed

    Hite, Richard K; Butterwick, Joel A; MacKinnon, Roderick

    2014-10-06

    Membrane phospholipids can function as potent regulators of ion channel function. This study uncovers and investigates the effect of phosphatidic acid on Kv channel gating. Using the method of reconstitution into planar lipid bilayers, in which protein and lipid components are defined and controlled, we characterize two effects of phosphatidic acid. The first is a non-specific electrostatic influence on activation mediated by electric charge density on the extracellular and intracellular membrane surfaces. The second is specific to the presence of a primary phosphate group, acts only through the intracellular membrane leaflet and depends on the presence of a particular arginine residue in the voltage sensor. Intracellular phosphatidic acid accounts for a nearly 50 mV shift in the midpoint of the activation curve in a direction consistent with stabilization of the voltage sensor's closed conformation. These findings support a novel mechanism of voltage sensor regulation by the signaling lipid phosphatidic acid.

  1. Phosphatidic acid modulation of Kv channel voltage sensor function

    PubMed Central

    Hite, Richard K; Butterwick, Joel A; MacKinnon, Roderick

    2014-01-01

    Membrane phospholipids can function as potent regulators of ion channel function. This study uncovers and investigates the effect of phosphatidic acid on Kv channel gating. Using the method of reconstitution into planar lipid bilayers, in which protein and lipid components are defined and controlled, we characterize two effects of phosphatidic acid. The first is a non-specific electrostatic influence on activation mediated by electric charge density on the extracellular and intracellular membrane surfaces. The second is specific to the presence of a primary phosphate group, acts only through the intracellular membrane leaflet and depends on the presence of a particular arginine residue in the voltage sensor. Intracellular phosphatidic acid accounts for a nearly 50 mV shift in the midpoint of the activation curve in a direction consistent with stabilization of the voltage sensor's closed conformation. These findings support a novel mechanism of voltage sensor regulation by the signaling lipid phosphatidic acid. DOI: http://dx.doi.org/10.7554/eLife.04366.001 PMID:25285449

  2. Molecular Coupling between Voltage Sensor and Pore Opening in the Arabidopsis Inward Rectifier K+ Channel KAT1

    PubMed Central

    Latorre, Ramon; Olcese, Riccardo; Basso, Claudia; Gonzalez, Carlos; Muñoz, Fabian; Cosmelli, Diego; Alvarez, Osvaldo

    2003-01-01

    Animal and plant voltage-gated ion channels share a common architecture. They are made up of four subunits and the positive charges on helical S4 segments of the protein in animal K+ channels are the main voltage-sensing elements. The KAT1 channel cloned from Arabidopsis thaliana, despite its structural similarity to animal outward rectifier K+ channels is, however, an inward rectifier. Here we detected KAT1-gating currents due to the existence of an intrinsic voltage sensor in this channel. The measured gating currents evoked in response to hyperpolarizing voltage steps consist of a very fast (τ = 318 ± 34 μs at −180 mV) and a slower component (4.5 ± 0.5 ms at −180 mV) representing charge moved when most channels are closed. The observed gating currents precede in time the ionic currents and they are measurable at voltages (less than or equal to −60) at which the channel open probability is negligible (≈10−4). These two observations, together with the fact that there is a delay in the onset of the ionic currents, indicate that gating charge transits between several closed states before the KAT1 channel opens. To gain insight into the molecular mechanisms that give rise to the gating currents and lead to channel opening, we probed external accessibility of S4 domain residues to methanethiosulfonate-ethyltrimethylammonium (MTSET) in both closed and open cysteine-substituted KAT1 channels. The results demonstrate that the putative voltage–sensing charges of S4 move inward when the KAT1 channels open. PMID:14517271

  3. Niflumic acid alters gating of HCN2 pacemaker channels by interaction with the outer region of S4 voltage sensing domains.

    PubMed

    Cheng, Lan; Sanguinetti, Michael C

    2009-05-01

    Niflumic acid, 2-[[3-(trifluoromethyl)phenyl]amino]pyridine-3-carboxylic acid (NFA), is a nonsteroidal anti-inflammatory drug that also blocks or modifies the gating of many ion channels. Here, we investigated the effects of NFA on hyperpolarization-activated cyclic nucleotide-gated cation (HCN) pacemaker channels expressed in X. laevis oocytes using site-directed mutagenesis and the two-electrode voltage-clamp technique. Extracellular NFA acted rapidly and caused a slowing of activation and deactivation and a hyperpolarizing shift in the voltage dependence of HCN2 channel activation (-24.5 +/- 1.2 mV at 1 mM). Slowed channel gating and reduction of current magnitude was marked in oocytes treated with NFA, while clamped at 0 mV but minimal in oocytes clamped at -100 mV, indicating the drug preferentially interacts with channels in the closed state. NFA at 0.1 to 3 mM shifted the half-point for channel activation in a concentration-dependent manner, with an EC(50) of 0.54 +/- 0.068 mM and a predicted maximum shift of -38 mV. NFA at 1 mM also reduced maximum HCN2 conductance by approximately 20%, presumably by direct block of the pore. The rapid onset and state-dependence of NFA-induced changes in channel gating suggests an interaction with the extracellular region of the S4 transmembrane helix, the primary voltage-sensing domain of HCN2. Neutralization (by mutation to Gln) of any three of the outer four basic charged residues in S4, but not single mutations, abrogated the NFA-induced shift in channel activation. We conclude that NFA alters HCN2 gating by interacting with the extracellular end of the S4 voltage sensor domains.

  4. The structure of the lipid-embedded potassium channel voltage sensor determined by double-electron–electron resonance spectroscopy

    PubMed Central

    Vamvouka, Magdalini; Cieslak, John; Van Eps, Ned; Hubbell, Wayne; Gross, Adrian

    2008-01-01

    A four-pulse electron paramagnetic resonance experiment was used to measure long-range inter-subunit distances in reconstituted KvAP, a voltage-dependent potassium (Kv) channel. The measurements have allowed us to reach the following five conclusions about the native structure of the voltage sensor of KvAP. First, the S1 helix of the voltage sensor engages in a helix packing interaction with the pore domain. Second, the crystallographically observed antiparallel helix-turn-helix motif of the voltage-sensing paddle is retained in the membrane-embedded voltage sensor. Third, the paddle is oriented in such a way as to expose one face to the pore domain and the opposite face to the membrane. Fourth, the paddle and the pore domain appear to be separated by a gap that is sufficiently wide for lipids to penetrate between the two domains. Fifth, the critical voltage-sensing arginine residues on the paddle appear to be lipid exposed. These results demonstrate the importance of the membrane for the native structure of Kv channels, suggest that lipids are an integral part of their native structure, and place the voltage-sensing machinery into a complex lipid environment near the pore domain. PMID:18287283

  5. Optical sensor based on a single CdS nanobelt.

    PubMed

    Li, Lei; Yang, Shuming; Han, Feng; Wang, Liangjun; Zhang, Xiaotong; Jiang, Zhuangde; Pan, Anlian

    2014-04-23

    In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL) technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 10⁴, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.

  6. Sensing voltage across lipid membranes

    PubMed Central

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  7. Charge movement in gating-locked HCN channels reveals weak coupling of voltage sensors and gate.

    PubMed

    Ryu, Sujung; Yellen, Gary

    2012-11-01

    HCN (hyperpolarization-activated cyclic nucleotide gated) pacemaker channels have an architecture similar to that of voltage-gated K(+) channels, but they open with the opposite voltage dependence. HCN channels use essentially the same positively charged voltage sensors and intracellular activation gates as K(+) channels, but apparently these two components are coupled differently. In this study, we examine the energetics of coupling between the voltage sensor and the pore by using cysteine mutant channels for which low concentrations of Cd(2+) ions freeze the open-closed gating machinery but still allow the sensors to move. We were able to lock mutant channels either into open or into closed states by the application of Cd(2+) and measure the effect on voltage sensor movement. Cd(2+) did not immobilize the gating charge, as expected for strict coupling, but rather it produced shifts in the voltage dependence of voltage sensor charge movement, consistent with its effect of confining transitions to either closed or open states. From the magnitude of the Cd(2+)-induced shifts, we estimate that each voltage sensor produces a roughly three- to sevenfold effect on the open-closed equilibrium, corresponding to a coupling energy of ∼1.3-2 kT per sensor. Such coupling is not only opposite in sign to the coupling in K(+) channels, but also much weaker.

  8. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylindermore » when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

  9. Structure and hydration of membranes embedded with voltage-sensing domains.

    PubMed

    Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J Alfredo; Schow, Eric V; Worcester, David L; Gawrisch, Klaus; Tobias, Douglas J; White, Stephen H; Swartz, Kenton J

    2009-11-26

    Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly charged S1-S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated ion channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance (NMR) spectroscopy and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1-S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations and cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings indicate that voltage sensors have evolved to interact with the lipid membrane while keeping energetic and structural perturbations to a minimum, and that water penetrates the membrane, to hydrate charged residues and shape the transmembrane electric field.

  10. Nonsensing residues in S3-S4 linker's C terminus affect the voltage sensor set point in K+ channels.

    PubMed

    Carvalho-de-Souza, Joao L; Bezanilla, Francisco

    2018-02-05

    Voltage sensitivity in ion channels is a function of highly conserved arginine residues in their voltage-sensing domains (VSDs), but this conservation does not explain the diversity in voltage dependence among different K + channels. Here we study the non-voltage-sensing residues 353 to 361 in Shaker K + channels and find that residues 358 and 361 strongly modulate the voltage dependence of the channel. We mutate these two residues into all possible remaining amino acids (AAs) and obtain Q-V and G-V curves. We introduced the nonconducting W434F mutation to record sensing currents in all mutants except L361R, which requires K + depletion because it is affected by W434F. By fitting Q-Vs with a sequential three-state model for two voltage dependence-related parameters ( V 0 , the voltage-dependent transition from the resting to intermediate state and V 1 , from the latter to the active state) and G-Vs with a two-state model for the voltage dependence of the pore domain parameter ( V 1/2 ), Spearman's coefficients denoting variable relationships with hydrophobicity, available area, length, width, and volume of the AAs in 358 and 361 positions could be calculated. We find that mutations in residue 358 shift Q-Vs and G-Vs along the voltage axis by affecting V 0 , V 1 , and V 1/2 according to the hydrophobicity of the AA. Mutations in residue 361 also shift both curves, but V 0 is affected by the hydrophobicity of the AA in position 361, whereas V 1 and V 1/2 are affected by size-related AA indices. Small-to-tiny AAs have opposite effects on V 1 and V 1/2 in position 358 compared with 361. We hypothesize possible coordination points in the protein that residues 358 and 361 would temporarily and differently interact with in an intermediate state of VSD activation. Our data contribute to the accumulating knowledge of voltage-dependent ion channel activation by adding functional information about the effects of so-called non-voltage-sensing residues on VSD dynamics. © 2018

  11. An electrostatic potassium channel opener targeting the final voltage sensor transition

    PubMed Central

    Börjesson, Sara I.

    2011-01-01

    Free polyunsaturated fatty acids (PUFAs) modulate the voltage dependence of voltage-gated ion channels. As an important consequence thereof, PUFAs can suppress epileptic seizures and cardiac arrhythmia. However, molecular details for the interaction between PUFA and ion channels are not well understood. In this study, we have localized the site of action for PUFAs on the voltage-gated Shaker K channel by introducing positive charges on the channel surface, which potentiated the PUFA effect. Furthermore, we found that PUFA mainly affects the final voltage sensor movement, which is closely linked to channel opening, and that specific charges at the extracellular end of the voltage sensor are critical for the PUFA effect. Because different voltage-gated K channels have different charge profiles, this implies channel-specific PUFA effects. The identified site and the pharmacological mechanism will potentially be very useful in future drug design of small-molecule compounds specifically targeting neuronal and cardiac excitability. PMID:21624947

  12. Potential role of voltage-sensing phosphatases in regulation of cell structure through the production of PI(3,4)P2.

    PubMed

    Yamaguchi, Shinji; Kurokawa, Tatsuki; Taira, Ikuko; Aoki, Naoya; Sakata, Souhei; Okamura, Yasushi; Homma, Koichi J

    2014-04-01

    Voltage-sensing phosphatase, VSP, consists of the transmembrane domain, operating as the voltage sensor, and the cytoplasmic domain with phosphoinositide-phosphatase activities. The voltage sensor tightly couples with the cytoplasmic phosphatase and membrane depolarization induces dephosphorylation of several species of phosphoinositides. VSP gene is conserved from urochordate to human. There are some diversities among VSP ortholog proteins; range of voltage of voltage sensor motions as well as substrate selectivity. In contrast with recent understandings of biophysical mechanisms of VSPs, little is known about its physiological roles. Here we report that chick ortholog of VSP (designated as Gg-VSP) induces morphological feature of cell process outgrowths with round cell body in DF-1 fibroblasts upon its forced expression. Expression of the voltage sensor mutant, Gg-VSPR153Q with shifted voltage dependence to a lower voltage led to more frequent changes of cell morphology than the wild-type protein. Coexpression of PTEN that dephosphorylates PI(3,4)P2 suppressed this effect by Gg-VSP, indicating that the increase of PI(3,4)P2 leads to changes of cell shape. In addition, visualization of PI(3,4)P2 with the fluorescent protein fused with the TAPP1-derived pleckstrin homology (PH) domain suggested that Gg-VSP influenced the distribution of PI(3,4)P2 . These findings raise a possibility that one of the VSP's functions could be to regulate cell morphology through voltage-sensitive tuning of phosphoinositide profile. © 2013 Wiley Periodicals, Inc.

  13. Direct Evidence of Conformational Changes Associated with Voltage Gating in a Voltage Sensor Protein by Time-Resolved X-ray/Neutron Interferometry

    PubMed Central

    2015-01-01

    The voltage sensor domain (VSD) of voltage-gated cation (e.g., Na+, K+) channels central to neurological signal transmission can function as a distinct module. When linked to an otherwise voltage-insensitive, ion-selective membrane pore, the VSD imparts voltage sensitivity to the channel. Proteins homologous with the VSD have recently been found to function themselves as voltage-gated proton channels or to impart voltage sensitivity to enzymes. Determining the conformational changes associated with voltage gating in the VSD itself in the absence of a pore domain thereby gains importance. We report the direct measurement of changes in the scattering-length density (SLD) profile of the VSD protein, vectorially oriented within a reconstituted phospholipid bilayer membrane, as a function of the transmembrane electric potential by time-resolved X-ray and neutron interferometry. The changes in the experimental SLD profiles for both polarizing and depolarizing potentials with respect to zero potential were found to extend over the entire length of the isolated VSD’s profile structure. The characteristics of the changes observed were in qualitative agreement with molecular dynamics simulations of a related membrane system, suggesting an initial interpretation of these changes in terms of the VSD’s atomic-level 3-D structure. PMID:24697545

  14. Structure and hydration of membranes embedded with voltage-sensing domains

    PubMed Central

    Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J. Alfredo; Schow, Eric V.; Worcester, David L.; Gawrisch, Klaus; Tobias, Douglas; White, Stephen H.; Swartz, Kenton J.

    2009-01-01

    Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly-charged S1–S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated potassium channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance spectroscopy, and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1–S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations, cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings reveal that voltage sensors have evolved to interact with the lipid membrane while keeping the energetic and structural perturbations to a minimum, and that water penetrates into the membrane to hydrate charged residues and shape the transmembrane electric field. PMID:19940918

  15. Gating transitions in the selectivity filter region of a sodium channel are coupled to the domain IV voltage sensor.

    PubMed

    Capes, Deborah L; Arcisio-Miranda, Manoel; Jarecki, Brian W; French, Robert J; Chanda, Baron

    2012-02-14

    Voltage-dependent ion channels are crucial for generation and propagation of electrical activity in biological systems. The primary mechanism for voltage transduction in these proteins involves the movement of a voltage-sensing domain (D), which opens a gate located on the cytoplasmic side. A distinct conformational change in the selectivity filter near the extracellular side has been implicated in slow inactivation gating, which is important for spike frequency adaptation in neural circuits. However, it remains an open question whether gating transitions in the selectivity filter region are also actuated by voltage sensors. Here, we examine conformational coupling between each of the four voltage sensors and the outer pore of a eukaryotic voltage-dependent sodium channel. The voltage sensors of these sodium channels are not structurally symmetric and exhibit functional specialization. To track the conformational rearrangements of individual voltage-sensing domains, we recorded domain-specific gating pore currents. Our data show that, of the four voltage sensors, only the domain IV voltage sensor is coupled to the conformation of the selectivity filter region of the sodium channel. Trapping the outer pore in a particular conformation with a high-affinity toxin or disulphide crossbridge impedes the return of this voltage sensor to its resting conformation. Our findings directly establish that, in addition to the canonical electromechanical coupling between voltage sensor and inner pore gates of a sodium channel, gating transitions in the selectivity filter region are also coupled to the movement of a voltage sensor. Furthermore, our results also imply that the voltage sensor of domain IV is unique in this linkage and in the ability to initiate slow inactivation in sodium channels.

  16. Tyrosine Residues from the S4-S5 Linker of Kv11.1 Channels Are Critical for Slow Deactivation.

    PubMed

    Ng, Chai-Ann; Gravel, Andrée E; Perry, Matthew D; Arnold, Alexandre A; Marcotte, Isabelle; Vandenberg, Jamie I

    2016-08-12

    Slow deactivation of Kv11.1 channels is critical for its function in the heart. The S4-S5 linker, which joins the voltage sensor and pore domains, plays a critical role in this slow deactivation gating. Here, we use NMR spectroscopy to identify the membrane-bound surface of the S4S5 linker, and we show that two highly conserved tyrosine residues within the KCNH subfamily of channels are membrane-associated. Site-directed mutagenesis and electrophysiological analysis indicates that Tyr-542 interacts with both the pore domain and voltage sensor residues to stabilize activated conformations of the channel, whereas Tyr-545 contributes to the slow kinetics of deactivation by primarily stabilizing the transition state between the activated and closed states. Thus, the two tyrosine residues in the Kv11.1 S4S5 linker play critical but distinct roles in the slow deactivation phenotype, which is a hallmark of Kv11.1 channels. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

  17. Developing Fast Fluorescent Protein Voltage Sensors by Optimizing FRET Interactions

    PubMed Central

    Sung, Uhna; Sepehri-Rad, Masoud; Piao, Hong Hua; Jin, Lei; Hughes, Thomas; Cohen, Lawrence B.; Baker, Bradley J.

    2015-01-01

    FRET (Förster Resonance Energy Transfer)-based protein voltage sensors can be useful for monitoring neuronal activity in vivo because the ratio of signals between the donor and acceptor pair reduces common sources of noise such as heart beat artifacts. We improved the performance of FRET based genetically encoded Fluorescent Protein (FP) voltage sensors by optimizing the location of donor and acceptor FPs flanking the voltage sensitive domain of the Ciona intestinalis voltage sensitive phosphatase. First, we created 39 different “Nabi1” constructs by positioning the donor FP, UKG, at 8 different locations downstream of the voltage-sensing domain and the acceptor FP, mKO, at 6 positions upstream. Several of these combinations resulted in large voltage dependent signals and relatively fast kinetics. Nabi1 probes responded with signal size up to 11% ΔF/F for a 100 mV depolarization and fast response time constants both for signal activation (~2 ms) and signal decay (~3 ms). We improved expression in neuronal cells by replacing the mKO and UKG FRET pair with Clover (donor FP) and mRuby2 (acceptor FP) to create Nabi2 probes. Nabi2 probes also had large signals and relatively fast time constants in HEK293 cells. In primary neuronal culture, a Nabi2 probe was able to differentiate individual action potentials at 45 Hz. PMID:26587834

  18. Induction of divalent cation permeability by heterologous expression of a voltage sensor domain.

    PubMed

    Arima, Hiroki; Tsutsui, Hidekazu; Sakamoto, Ayako; Yoshida, Manabu; Okamura, Yasushi

    2018-01-06

    The voltage sensor domain (VSD) is a protein domain that confers sensitivity to membrane potential in voltage-gated ion channels as well as the voltage-sensing phosphatase. Although VSDs have long been considered to function as regulatory units acting on adjacent effectors, recent studies have revealed the existence of direct ion permeation paths in some mutated VSDs and in the voltage-gated proton channel. In this study, we show that calcium currents are evoked upon membrane hyperpolarization in cells expressing a VSD derived from an ascidian voltage-gated ion channel superfamily. Unlike the previously reported omega-pore in the Shaker K + channel and rNav1.4, mutations are not required. From electrophysiological experiments in heterologous expression systems, we found that the conductance is directly mediated by the VSD itself and is carried by both monovalent and divalent cations. This is the first report of divalent cation permeation through a VSD-like structure. Copyright © 2018 Elsevier B.V. All rights reserved.

  19. Non-perturbing voltage measurement in a coaxial cable with slab-coupled optical sensors.

    PubMed

    Stan, Nikola; Seng, Frederick; Shumway, LeGrand; King, Rex; Schultz, Stephen

    2017-08-20

    Voltage in a coaxial cable is measured by an electric-field optical fiber sensor exploiting the proportionality of voltage and electric field in a fixed structure. The sensor is inserted in a hole drilled through the dielectric of the RG-218 coaxial cable and sealed with epoxy to displace all air and prevent the adverse effects of charge buildup during high-voltage measurements. It is shown that the presence of the sensor in the coaxial cable does not significantly increase electrical reflections in the cable. A slab-coupled optical fiber sensor (SCOS) is used for its compact size and dielectric make. The dynamic range of 50 dB is shown experimentally with detection of signals as low as 1 V and up to 157 kV. A low corner of 0.3 Hz is demonstrated and the SCOS is shown to be able to measure 90 ns rise time.

  20. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    PubMed Central

    Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

    2016-01-01

    We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

  1. Optical fiber voltage sensor based on Michelsion interferometer using Fabry-Perot demodulation interferometer

    NASA Astrophysics Data System (ADS)

    Chen, Xinwei; He, Shengnan; Li, Dandan; Wang, Kai; Fan, Yan'en; Wu, Shuai

    2014-11-01

    We present an optical fiber voltage sensor by Michelsion interferometer (MI) employing a Fabry-Perot (F-P) interferometer and the DC phase tracking (DCPT) signal processing method. By mounting a MI fabricated by an optical fiber coupler on a piezoelectric (PZT) transducer bar, a dynamic strain would be generated to change the optical path difference (OPD) of the interferometer when the measured voltage was applied on the PZT. Applying an F-P interferometer to demodulate the optical intensity variation output of the MI, the voltage can be obtained. The experiment results show that the relationship between the optical intensity variation and the voltage applied on the PZT is approximately linear. Furthermore, the phase generate carrier (PGC) algorithm was applied to demodulate the output of the sensor also.

  2. The cooperative voltage sensor motion that gates a potassium channel.

    PubMed

    Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

    2005-01-01

    The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

  3. The Cooperative Voltage Sensor Motion that Gates a Potassium Channel

    PubMed Central

    Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

    2005-01-01

    The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close. PMID:15623895

  4. KCNE1 divides the voltage sensor movement in KCNQ1/KCNE1 channels into two steps

    NASA Astrophysics Data System (ADS)

    Barro-Soria, Rene; Rebolledo, Santiago; Liin, Sara I.; Perez, Marta E.; Sampson, Kevin J.; Kass, Robert S.; Larsson, H. Peter

    2014-04-01

    The functional properties of KCNQ1 channels are highly dependent on associated KCNE-β subunits. Mutations in KCNQ1 or KCNE subunits can cause congenital channelopathies, such as deafness, cardiac arrhythmias and epilepsy. The mechanism by which KCNE1-β subunits slow the kinetics of KCNQ1 channels is a matter of current controversy. Here we show that KCNQ1/KCNE1 channel activation occurs in two steps: first, mutually independent voltage sensor movements in the four KCNQ1 subunits generate the main gating charge movement and underlie the initial delay in the activation time course of KCNQ1/KCNE1 currents. Second, a slower and concerted conformational change of all four voltage sensors and the gate, which opens the KCNQ1/KCNE1 channel. Our data show that KCNE1 divides the voltage sensor movement into two steps with widely different voltage dependences and kinetics. The two voltage sensor steps in KCNQ1/KCNE1 channels can be pharmacologically isolated and further separated by a disease-causing mutation.

  5. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  6. Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears.

    PubMed

    Zhang, Xiaoxing; Cheng, Zheng; Gui, Yingang

    2016-07-26

    In this study a new built-in ultrahigh frequency (UHF) antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD) detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor.

  7. Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears

    PubMed Central

    Zhang, Xiaoxing; Cheng, Zheng; Gui, Yingang

    2016-01-01

    In this study a new built-in ultrahigh frequency (UHF) antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD) detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor. PMID:27472331

  8. Mapping the Interaction Site for a β-Scorpion Toxin in the Pore Module of Domain III of Voltage-gated Na+ Channels*

    PubMed Central

    Zhang, Joel Z.; Yarov-Yarovoy, Vladimir; Scheuer, Todd; Karbat, Izhar; Cohen, Lior; Gordon, Dalia; Gurevitz, Michael; Catterall, William A.

    2012-01-01

    Activation of voltage-gated sodium (Nav) channels initiates and propagates action potentials in electrically excitable cells. β-Scorpion toxins, including toxin IV from Centruroides suffusus suffusus (CssIV), enhance activation of NaV channels. CssIV stabilizes the voltage sensor in domain II in its activated state via a voltage-sensor trapping mechanism. Amino acid residues required for the action of CssIV have been identified in the S1-S2 and S3-S4 extracellular loops of domain II. The extracellular loops of domain III are also involved in toxin action, but individual amino acid residues have not been identified. We used site-directed mutagenesis and voltage clamp recording to investigate amino acid residues of domain III that are involved in CssIV action. In the IIISS2-S6 loop, five substitutions at four positions altered voltage-sensor trapping by CssIVE15A. Three substitutions (E1438A, D1445A, and D1445Y) markedly decreased voltage-sensor trapping, whereas the other two substitutions (N1436G and L1439A) increased voltage-sensor trapping. These bidirectional effects suggest that residues in IIISS2-S6 make both positive and negative interactions with CssIV. N1436G enhanced voltage-sensor trapping via increased binding affinity to the resting state, whereas L1439A increased voltage-sensor trapping efficacy. Based on these results, a three-dimensional model of the toxin-channel interaction was developed using the Rosetta modeling method. These data provide additional molecular insight into the voltage-sensor trapping mechanism of toxin action and define a three-point interaction site for β-scorpion toxins on NaV channels. Binding of α- and β-scorpion toxins to two distinct, pseudo-symmetrically organized receptor sites on NaV channels acts synergistically to modify channel gating and paralyze prey. PMID:22761417

  9. Fiber-optic voltage sensor with cladded fiber and evanescent wave variation detection

    DOEpatents

    Wood, Charles B.

    1992-01-01

    A fiber optic voltage sensor is described which includes a source of light, a reference fiber for receiving a known percentage of the light and an electrostrictive element having terminals across which is applied, a voltage to be measured. The electrostrictive element is responsive to the applied voltage to assume an altered physical state. A measuring fiber also receives a known percentage of light from the light source and is secured about the electrostrictive element. The measuring fiber is provided with a cladding and exhibits an evanescent wave in the cladding. The measuring fiber has a known length which is altered when the electrostrictive element assumes its altered physical state. A differential sensor is provided which senses the intensity of light in both the reference fiber and the measuring fiber and provides an output indicative of the difference between the intensities.

  10. Fiber-optic voltage sensor with cladded fiber and evanescent wave variation detection

    DOEpatents

    Wood, C.B.

    1992-12-15

    A fiber optic voltage sensor is described which includes a source of light, a reference fiber for receiving a known percentage of the light and an electrostrictive element having terminals across which is applied, a voltage to be measured. The electrostrictive element is responsive to the applied voltage to assume an altered physical state. A measuring fiber also receives a known percentage of light from the light source and is secured about the electrostrictive element. The measuring fiber is provided with a cladding and exhibits an evanescent wave in the cladding. The measuring fiber has a known length which is altered when the electrostrictive element assumes its altered physical state. A differential sensor is provided which senses the intensity of light in both the reference fiber and the measuring fiber and provides an output indicative of the difference between the intensities. 3 figs.

  11. An H₂S Sensor Based on Electrochemistry for Chicken Coops.

    PubMed

    Zeng, Lihua; He, Mei; Yu, Huihui; Li, Daoliang

    2016-08-31

    The recent modernization of the livestock industry lags behind the scale of the livestock industry, particularly in indoor environmental monitoring. In particular, the H₂S gas concentration in chicken coops affects the growth and reproductive capacity of the chickens and threatens their health. Therefore, the research and development of a low-cost, environmentally friendly sensor that can achieve on-line monitoring of H₂S gas has a notably important practical significance. This paper reports the design of an H₂S gas sensor, with selection of an electrochemical probe with high accuracy and wide measurement range using the relatively mature technology of electrochemical sensors. Although the probe of the sensor is the main factor that affects the sensor accuracy, the probe must be combined with a specifically designed signal condition circuit that can overcome the lack of an electrode to satisfy the requirements for the interconnection and matching between the output signal and the test instrument. Because the output current of the electrochemical electrode is small and likely to be disturbed by noise, we designed signal-conditioning modules. Through the signal-conditioning circuit, the output signal of the current electrode can be converted into a voltage and amplified. In addition, we designed a power control module because a bias voltage is necessary for the electrode. Finally, after the calibration experiment, the accurate concentration of H₂S gas can be measured. Based on the experimental analysis, the sensor shows good linearity and selectivity, comparatively high sensitivity, perfect stability and an extremely long operating life of up to two years.

  12. Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

    PubMed

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-07-17

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  13. A micro-power precision amplifier for converting the output of light sensors to a voltage readable by miniature data loggers.

    PubMed

    Phillips, Nathan; Bond, Barbara J.

    1999-07-01

    To record photosynthetically active radiation (PAR) simultaneously at a number of points throughout a forest canopy, we developed a simple, inexpensive (< $10 US) current-to-voltage converter that processes the current generated by a photodiode radiation sensor to a voltage range that is recordable with a miniature data logger. The converter, which weighs less than 75 g and has a volume of only 100 cm(3), is built around an ultra-low power OP-90 precision operational amplifier, which consumes less than 0.5 mA at 9 V when converting the output of a Li-Cor LI-190SA quantum sensor exposed to photosynthetically active radiation (PAR) of 2500 &mgr;mol m(-2) s(-1) or only 5 &mgr;A in low light. A small 9-V battery thus powers the amplifier for more than 1000 h of continuous operation. Correlations between photometer readings and voltage output from the current-to-voltage converter were high and linear at both high and low PAR. Sixteen Li-Cor LI-190SA quantum sensors each equipped with current-to-voltage converters and connected to a miniature data logger were deployed in the upper branches of a Panamanian tropical rainforest canopy. Each unit performed reliably during a one- or two-week evaluation.

  14. Optical fiber sensor of partial discharges in High Voltage DC experiments

    NASA Astrophysics Data System (ADS)

    Búa-Núñez, I.; Azcárraga-Ramos, C. G.; Posada-Román, J. E.; Garcia-Souto, J. A.

    2014-05-01

    A setup simulating High Voltage DC (HVDC) transformers barriers was developed to demonstrate the effectiveness of an optical fiber (OF) sensor in detecting partial discharges (PD) under these peculiar conditions. Different PD detection techniques were compared: electrical methods, and acoustic methods. Standard piezoelectric sensors (R15i-AST) and the above mentioned OF sensors were used for acoustic detection. The OF sensor was able to detect PD acoustically with a sensitivity better than the other detection methods. The multichannel instrumentation system was tested in real HVDC conditions with the aim of analyzing the behavior of the insulation (mineral oil/pressboard).

  15. High-resolution orientation and depth of insertion of the voltage-sensing S4 helix of a potassium channel in lipid bilayers.

    PubMed

    Doherty, Tim; Su, Yongchao; Hong, Mei

    2010-08-27

    The opening and closing of voltage-gated potassium (Kv) channels are controlled by several conserved Arg residues in the S4 helix of the voltage-sensing domain. The interaction of these positively charged Arg residues with the lipid membrane has been of intense interest for understanding how membrane proteins fold to allow charged residues to insert into lipid bilayers against free-energy barriers. Using solid-state NMR, we have now determined the orientation and insertion depth of the S4 peptide of the KvAP channel in lipid bilayers. Two-dimensional (15)N correlation experiments of macroscopically oriented S4 peptide in phospholipid bilayers revealed a tilt angle of 40 degrees and two possible rotation angles differing by 180 degrees around the helix axis. Remarkably, the tilt angle and one of the two rotation angles are identical to those of the S4 helix in the intact voltage-sensing domain, suggesting that interactions between the S4 segment and other helices of the voltage-sensing domain are not essential for the membrane topology of the S4 helix. (13)C-(31)P distances between the S4 backbone and the lipid (31)P indicate a approximately 9 A local thinning and 2 A average thinning of the DMPC (1,2-dimyristoyl-sn-glycero-3-phosphochloline)/DMPG (1,2-dimyristoyl-sn-glycero-3-phosphatidylglycerol) bilayer, consistent with neutron diffraction data. Moreover, a short distance of 4.6 A from the guanidinium C(zeta) of the second Arg to (31)P indicates the existence of guanidinium phosphate hydrogen bonding and salt bridges. These data suggest that the structure of the Kv gating helix is mainly determined by protein-lipid interactions instead of interhelical protein-protein interactions, and the S4 amino acid sequence encodes sufficient information for the membrane topology of this crucial gating helix. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

  16. Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

    PubMed Central

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-01-01

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid. PMID:25036333

  17. Double gaps along Shaker S4 demonstrate omega currents at three different closed states.

    PubMed

    Gamal El-Din, Tamer M; Heldstab, Hansjakob; Lehmann, Claudia; Greeff, Nikolaus G

    2010-01-01

    The aim of the present study was to investigate in detail how the voltage sensor in the Shaker potassium channel moves during the gating process. After the publication of the open channel structure from the crystallized K(V)AP channel in 2003, an alternative so-called "paddle" model was put forward in contrast to the existing helical screw model. The voltage sensor S4 contains 4 arginine residues relevant for gating, R1(362), R2(365), R3(368) and R4(371), each separated by 2 neutral residues. These charged residues coil as one of three threads on the S4-alpha-helix. Based on a previous finding that the mutation R1S leads to the so-called omega leak current through a "gating-pore" in the closed state, we introduced gaps systematically along the arginine thread substituting long arginines by short serines. Mutations R2S or R3S did neither create transient nor steady leaks. The fact that the native residue A359, which is located three amino acids in front of R1, is a short one, motivated us to check its role. Mutation of A359 to arginine blocked the omega current in the R1S mutant indicating that the omega pore is occupied by A359 and R1. Introducing further double gaps (RR to SS) at sequential positions (0 + 1, 1 + 2, 2 + 3), produced clear leak currents which were remarkably stable over a wide voltage range. These leaks contradict that S4 would swing together with S3 in lipid according to the paddle hypothesis. Rather, our results show that during gating the S4 segment moves in 3 helical steps through a fixed pore formed by the channel protein.

  18. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  19. Voltage-sensing phosphatase: its molecular relationship with PTEN.

    PubMed

    Okamura, Yasushi; Dixon, Jack E

    2011-02-01

    Voltage-sensing phosphoinositide phosphatase (VSP) contains voltage sensor and cytoplasmic phosphatase domains. A unique feature of this protein is that depolarization-induced motions of the voltage sensor activate PtdIns(3,4,5)P(3) and PtdIns(4,5)P(2) phosphatase activities. VSP exhibits remarkable structural similarities with PTEN, the phosphatase and tensin homolog deleted on chromosome 10. These similarities include the cytoplasmic phosphatase region, the phosphoinositide binding region, and the putative membrane interacting C2 domain.

  20. NS1643 Interacts around L529 of hERG to Alter Voltage Sensor Movement on the Path to Activation

    PubMed Central

    Guo, Jiqing; Cheng, Yen May; Lees-Miller, James P.; Perissinotti, Laura L.; Claydon, Tom W.; Hull, Christina M.; Thouta, Samrat; Roach, Daniel E.; Durdagi, Serdar; Noskov, Sergei Y.; Duff, Henry J.

    2015-01-01

    Activators of hERG1 such as NS1643 are being developed for congenital/acquired long QT syndrome. Previous studies identify the neighborhood of L529 around the voltage-sensor as a putative interacting site for NS1643. With NS1643, the V1/2 of activation of L529I (−34 ± 4 mV) is similar to wild-type (WT) (−37 ± 3 mV; P > 0.05). WT and L529I showed no difference in the slope factor in the absence of NS1643 (8 ± 0 vs. 9 ± 0) but showed a difference in the presence of NS1643 (9 ± 0.3 vs. 22 ± 1; P < 0.01). Voltage-clamp-fluorimetry studies also indicated that in L529I, NS1643 reduces the voltage-sensitivity of S4 movement. To further assess mechanism of NS1643 action, mutations were made in this neighborhood. NS1643 shifts the V1/2 of activation of both K525C and K525C/L529I to hyperpolarized potentials (−131 ± 4 mV for K525C and −120 ± 21 mV for K525C/L529I). Both K525C and K525C/K529I had similar slope factors in the absence of NS1643 (18 ± 2 vs. 34 ± 5, respectively) but with NS1643, the slope factor of K525C/L529I increased from 34 ± 5 to 71 ± 10 (P < 0.01) whereas for K525C the slope factor did not change (18 ± 2 at baseline and 16 ± 2 for NS1643). At baseline, K525R had a slope factor similar to WT (9 vs. 8) but in the presence of NS1643, the slope factor of K525R was increased to 24 ± 4 vs. 9 ± 0 mV for WT (P < 0.01). Molecular modeling indicates that L529I induces a kink in the S4 voltage-sensor helix, altering a salt-bridge involving K525. Moreover, docking studies indicate that NS1643 binds to the kinked structure induced by the mutation with a higher affinity. Combining biophysical, computational, and electrophysiological evidence, a mechanistic principle governing the action of some activators of hERG1 channels is proposed. PMID:25809253

  1. Optical sensors for electrical elements of a medium voltage distribution network

    NASA Astrophysics Data System (ADS)

    De Maria, Letizia; Bartalesi, Daniele; Serragli, Paolo; Paladino, Domenico

    2012-04-01

    The aging of most of the components of the National transmission and distribution system can potentially influence the reliability of power supply in a Medium Voltage (MV) network. In order to prevent possible dangerous situations, selected diagnostic indicators on electrical parts exploiting reliable and potentially low-cost sensors are required. This paper presents results concerning two main research activities regarding the development and application of innovative optical sensors for the diagnostic of MV electrical components. The first concerns a multi-sensor prototype for the detection of pre-discharges in MV switchboards: it is the combination of three different types of sensors operating simultaneously to detect incipient failure and to reduce the occurrence of false alarms. The system is real-time controlled by an embedded computer through a LabView interface. The second activity refers to a diagnostic tool to provide significant real-time information about early aging of MV/Low Voltage (LV) transformers by means of its vibration fingerprint. A miniaturized Optical Micro-Electro-Mechanical System (MEMS) based unit has been assembled for vibration measurements, wireless connected to a remote computer and controlled via LabView interface. Preliminary comparative tests were carried out with standard piezoelectric accelerometers on a conventional MV/LV test transformer under open circuit and in short-circuited configuration.

  2. A Comparison of Two Sensors Used to Measure High-Voltage, Fast-Risetime Signals in Coaxial Cable

    NASA Astrophysics Data System (ADS)

    Farr, Everett G.; Atchley, Lanney M.; Ellibee, Donald E.; Carey, William J.; Altgilbers, Larry L.

    We consider here two sensors that are commonly used to measure high-voltage fast-risetime signals in coaxial cable. One sensor measures the current in the cable, and is called a Current-Viewing Resistor, or CVR. In this design, the cable jacket is cut, a portion of the cable jacket is removed, and a number of resistors are inserted in parallel across the gap, thereby creating a low resistance in series with the outer cable jacket. The voltage across these resistors is proportional to the current in the coax. The second sensor measures the derivative of the voltage in the coax. It is fabricated from a "sawed-off" SMA connector that is inserted through a small hole in the cable jacket. In this paper we characterize the accuracy of both sensors when used with RG-220 cable, and we discuss the situations when one might prefer one measurement type over the other.

  3. Enzyme domain affects the movement of the voltage sensor in ascidian and zebrafish voltage-sensing phosphatases.

    PubMed

    Hossain, Md Israil; Iwasaki, Hirohide; Okochi, Yoshifumi; Chahine, Mohamed; Higashijima, Shinichi; Nagayama, Kuniaki; Okamura, Yasushi

    2008-06-27

    The ascidian voltage-sensing phosphatase (Ci-VSP) consists of the voltage sensor domain (VSD) and a cytoplasmic phosphatase region that has significant homology to the phosphatase and tensin homolog deleted on chromosome TEN (PTEN). The phosphatase activity of Ci-VSP is modified by the conformational change of the VSD. In many proteins, two protein modules are bidirectionally coupled, but it is unknown whether the phosphatase domain could affect the movement of the VSD in VSP. We addressed this issue by whole-cell patch recording of gating currents from a teleost VSP (Dr-VSP) cloned from Danio rerio expressed in tsA201 cells. Replacement of a critical cysteine residue, in the phosphatase active center of Dr-VSP, by serine sharpened both ON- and OFF-gating currents. Similar changes were produced by treatment with phosphatase inhibitors, pervanadate and orthovanadate, that constitutively bind to cysteine in the active catalytic center of phosphatases. The distinct kinetics of gating currents dependent on enzyme activity were not because of altered phosphatidylinositol 4,5-bisphosphate levels, because the kinetics of gating current did not change by depletion of phosphatidylinositol 4,5-bisphosphate, as reported by coexpressed KCNQ2/3 channels. These results indicate that the movement of the VSD is influenced by the enzymatic state of the cytoplasmic domain, providing an important clue for understanding mechanisms of coupling between the VSD and its effector.

  4. The conserved phenylalanine in the K+ channel voltage-sensor domain creates a barrier with unidirectional effects.

    PubMed

    Schwaiger, Christine S; Liin, Sara I; Elinder, Fredrik; Lindahl, Erik

    2013-01-08

    Voltage-gated ion channels are crucial for regulation of electric activity of excitable tissues such as nerve cells, and play important roles in many diseases. During activation, the charged S4 segment in the voltage sensor domain translates across a hydrophobic core forming a barrier for the gating charges. This barrier is critical for channel function, and a conserved phenylalanine in segment S2 has previously been identified to be highly sensitive to substitutions. Here, we have studied the kinetics of K(v)1-type potassium channels (Shaker and K(v)1.2/2.1 chimera) through site-directed mutagenesis, electrophysiology, and molecular simulations. The F290L mutation in Shaker (F233L in K(v)1.2/2.1) accelerates channel closure by at least a factor 50, although opening is unaffected. Free energy profiles with the hydrophobic neighbors of F233 mutated to alanine indicate that the open state with the fourth arginine in S4 above the hydrophobic core is destabilized by ∼17 kJ/mol compared to the first closed intermediate. This significantly lowers the barrier of the first deactivation step, although the last step of activation is unaffected. Simulations of wild-type F233 show that the phenyl ring always rotates toward the extracellular side both for activation and deactivation, which appears to help stabilize a well-defined open state. Copyright © 2013 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  5. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.

    We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  6. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    DOE PAGES

    Benoit, M.; de Mendizabal, J. Bilbao; Casse, G.; ...

    2016-07-21

    We investigated the active pixel sensors based on the High-Voltage CMOS technology as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. Our paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. These results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  7. R1 in the Shaker S4 occupies the gating charge transfer center in the resting state

    PubMed Central

    Lin, Meng-chin A.; Hsieh, Jui-Yi; Mock, Allan F.

    2011-01-01

    During voltage-dependent activation in Shaker channels, four arginine residues in the S4 segment (R1–R4) cross the transmembrane electric field. It has been proposed that R1–R4 movement is facilitated by a “gating charge transfer center” comprising a phenylalanine (F290) in S2 plus two acidic residues, one each in S2 and S3. According to this proposal, R1 occupies the charge transfer center in the resting state, defined as the conformation in which S4 is maximally retracted toward the cytoplasm. However, other evidence suggests that R1 is located extracellular to the charge transfer center, near I287 in S2, in the resting state. To investigate the resting position of R1, we mutated I287 to histidine (I287H), paired it with histidine mutations of key voltage sensor residues, and determined the effect of extracellular Zn2+ on channel activity. In I287H+R1H, Zn2+ generated a slow component of activation with a maximum amplitude (Aslow,max) of ∼56%, indicating that only a fraction of voltage sensors can bind Zn2+ at a holding potential of −80 mV. Aslow,max decreased after applying either depolarizing or hyperpolarizing prepulses from −80 mV. The decline of Aslow,max after negative prepulses indicates that R1 moves inward to abolish ion binding, going beyond the point where reorientation of the I287H and R1H side chains would reestablish a binding site. These data support the proposal that R1 occupies the charge transfer center upon hyperpolarization. Consistent with this, pairing I287H with A359H in the S3–S4 loop generated a Zn2+-binding site. At saturating concentrations, Aslow,max reached 100%, indicating that Zn2+ traps the I287H+A359H voltage sensor in an absorbing conformation. Transferring I287H+A359H into a mutant background that stabilizes the resting state significantly enhanced Zn2+ binding at −80 mV. Our results strongly support the conclusion that R1 occupies the gating charge transfer center in the resting conformation. PMID:21788609

  8. Local anesthetics disrupt energetic coupling between the voltage-sensing segments of a sodium channel.

    PubMed

    Muroi, Yukiko; Chanda, Baron

    2009-01-01

    Local anesthetics block sodium channels in a state-dependent fashion, binding with higher affinity to open and/or inactivated states. Gating current measurements show that local anesthetics immobilize a fraction of the gating charge, suggesting that the movement of voltage sensors is modified when a local anesthetic binds to the pore of the sodium channel. Here, using voltage clamp fluorescence measurements, we provide a quantitative description of the effect of local anesthetics on the steady-state behavior of the voltage-sensing segments of a sodium channel. Lidocaine and QX-314 shifted the midpoints of the fluorescence-voltage (F-V) curves of S4 domain III in the hyperpolarizing direction by 57 and 65 mV, respectively. A single mutation in the S6 of domain IV (F1579A), a site critical for local anesthetic block, abolished the effect of QX-314 on the voltage sensor of domain III. Both local anesthetics modestly shifted the F-V relationships of S4 domain IV toward hyperpolarized potentials. In contrast, the F-V curve of the S4 domain I was shifted by 11 mV in the depolarizing direction upon QX-314 binding. These antagonistic effects of the local anesthetic indicate that the drug modifies the coupling between the voltage-sensing domains of the sodium channel. Our findings suggest a novel role of local anesthetics in modulating the gating apparatus of the sodium channel.

  9. KCNE1 remodels the voltage sensor of Kv7.1 to modulate channel function.

    PubMed

    Wu, Dick; Pan, Hua; Delaloye, Kelli; Cui, Jianmin

    2010-12-01

    The KCNE1 auxiliary subunit coassembles with the Kv7.1 channel and modulates its properties to generate the cardiac I(Ks) current. Recent biophysical evidence suggests that KCNE1 interacts with the voltage-sensing domain (VSD) of Kv7.1. To investigate the mechanism of how KCNE1 affects the VSD to alter the voltage dependence of channel activation, we perturbed the VSD of Kv7.1 by mutagenesis and chemical modification in the absence and presence of KCNE1. Mutagenesis of S4 in Kv7.1 indicates that basic residues in the N-terminal half (S4-N) and C-terminal half (S4-C) of S4 are important for stabilizing the resting and activated states of the channel, respectively. KCNE1 disrupts electrostatic interactions involving S4-C, specifically with the lower conserved glutamate in S2 (Glu(170) or E2). Likewise, Trp scanning of S4 shows that mutations to a cluster of residues in S4-C eliminate current in the presence of KCNE1. In addition, KCNE1 affects S4-N by enhancing MTS accessibility to the top of the VSD. Consistent with the structure of Kv channels and previous studies on the KCNE1-Kv7.1 interaction, these results suggest that KCNE1 alters the interactions of S4 residues with the surrounding protein environment, possibly by changing the protein packing around S4, thereby affecting the voltage dependence of Kv7.1. Copyright © 2010 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  10. High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

    NASA Astrophysics Data System (ADS)

    Jiang, C.; Rumyantsev, S. L.; Samnakay, R.; Shur, M. S.; Balandin, A. A.

    2015-02-01

    We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a "memory step," was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.

  11. Modulation of BK channel voltage gating by different auxiliary β subunits

    PubMed Central

    Contreras, Gustavo F.; Neely, Alan; Alvarez, Osvaldo; Gonzalez, Carlos; Latorre, Ramon

    2012-01-01

    Calcium- and voltage-activated potassium channels (BK) are regulated by a multiplicity of signals. The prevailing view is that different BK gating mechanisms converge to determine channel opening and that these gating mechanisms are allosterically coupled. In most instances the pore forming α subunit of BK is associated with one of four alternative β subunits that appear to target specific gating mechanisms to regulate the channel activity. In particular, β1 stabilizes the active configuration of the BK voltage sensor having a large effect on BK Ca2+ sensitivity. To determine the extent to which β subunits regulate the BK voltage sensor, we measured gating currents induced by the pore-forming BK α subunit alone and with the different β subunits expressed in Xenopus oocytes (β1, β2IR, β3b, and β4). We found that β1, β2, and β4 stabilize the BK voltage sensor in the active conformation. β3 has no effect on voltage sensor equilibrium. In addition, β4 decreases the apparent number of charges per voltage sensor. The decrease in the charge associated with the voltage sensor in α β4 channels explains most of their biophysical properties. For channels composed of the α subunit alone, gating charge increases slowly with pulse duration as expected if a significant fraction of this charge develops with a time course comparable to that of K+ current activation. In the presence of β1, β2, and β4 this slow component develops in advance of and much more rapidly than ion current activation, suggesting that BK channel opening proceeds in two steps. PMID:23112204

  12. The S4S5 Linker Acts as a Signal Integrator for hERG K+ Channel Activation and Deactivation Gating

    PubMed Central

    Ng, Chai Ann; Perry, Matthew D.; Tan, Peter S.; Hill, Adam P.; Kuchel, Philip W.; Vandenberg, Jamie I.

    2012-01-01

    Human ether-à-go-go-related gene (hERG) K+ channels have unusual gating kinetics. Characterised by slow activation/deactivation but rapid inactivation/recovery from inactivation, the unique gating kinetics underlie the central role hERG channels play in cardiac repolarisation. The slow activation and deactivation kinetics are regulated in part by the S4S5 linker, which couples movement of the voltage sensor domain to opening of the activation gate at the distal end of the inner helix of the pore domain. It has also been suggested that cytosolic domains may interact with the S4S5 linker to regulate activation and deactivation kinetics. Here, we show that the solution structure of a peptide corresponding to the S4S5 linker of hERG contains an amphipathic helix. The effects of mutations at the majority of residues in the S4S5 linker of hERG were consistent with the previously identified role in coupling voltage sensor movement to the activation gate. However, mutations to Ser543, Tyr545, Gly546 and Ala548 had more complex phenotypes indicating that these residues are involved in additional interactions. We propose a model in which the S4S5 linker, in addition to coupling VSD movement to the activation gate, also contributes to interactions that stabilise the closed state and a separate set of interactions that stabilise the open state. The S4S5 linker therefore acts as a signal integrator and plays a crucial role in the slow deactivation kinetics of the channel. PMID:22359612

  13. Structure and Orientation of a Voltage-Sensor Toxin in Lipid Membranes

    PubMed Central

    Jung, Hyun Ho; Jung, Hoi Jong; Milescu, Mirela; Lee, Chul Won; Lee, Seungkyu; Lee, Ju Yeon; Eu, Young-Jae; Kim, Ha Hyung; Swartz, Kenton J.; Kim, Jae Il

    2010-01-01

    Abstract Amphipathic protein toxins from tarantula venom inhibit voltage-activated potassium (Kv) channels by binding to a critical helix-turn-helix motif termed the voltage sensor paddle. Although these toxins partition into membranes to bind the paddle motif, their structure and orientation within the membrane are unknown. We investigated the interaction of a tarantula toxin named SGTx with membranes using both fluorescence and NMR spectroscopy. Depth-dependent fluorescence-quenching experiments with brominated lipids suggest that Trp30 in SGTx is positioned ∼9 Å from the center of the bilayer. NMR spectra reveal that the inhibitor cystine knot structure of the toxin does not radically change upon membrane partitioning. Transferred cross-saturation NMR experiments indicate that the toxin's hydrophobic protrusion contacts the hydrophobic core of the membrane, whereas most surrounding polar residues remain at interfacial regions of the bilayer. The inferred orientation of the toxin reveals a twofold symmetry in the arrangement of basic and hydrophobic residues, a feature that is conserved among tarantula toxins. These results have important implications for regions of the toxin involved in recognizing membranes and voltage-sensor paddles, and for the mechanisms by which tarantula toxins alter the activity of different types of ion channels. PMID:20643084

  14. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor.

    PubMed

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-06-14

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 V RMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame.

  15. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor

    PubMed Central

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-01-01

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame. PMID:28613250

  16. External protons destabilize the activated voltage sensor in hERG channels.

    PubMed

    Shi, Yu Patrick; Cheng, Yen May; Van Slyke, Aaron C; Claydon, Tom W

    2014-03-01

    Extracellular acidosis shifts hERG channel activation to more depolarized potentials and accelerates channel deactivation; however, the mechanisms underlying these effects are unclear. External divalent cations, e.g., Ca(2+) and Cd(2+), mimic these effects and coordinate within a metal ion binding pocket composed of three acidic residues in hERG: D456 and D460 in S2 and D509 in S3. A common mechanism may underlie divalent cation and proton effects on hERG gating. Using two-electrode voltage clamp, we show proton sensitivity of hERG channel activation (pKa = 5.6), but not deactivation, was greatly reduced in the presence of Cd(2+) (0.1 mM), suggesting a common binding site for the Cd(2+) and proton effect on activation and separable effects of protons on activation and deactivation. Mutational analysis confirmed that D509 plays a critical role in the pH dependence of activation, as shown previously, and that cooperative actions involving D456 and D460 are also required. Importantly, neutralization of all three acidic residues abolished the proton-induced shift of activation, suggesting that the metal ion binding pocket alone accounts for the effects of protons on hERG channel activation. Voltage-clamp fluorimetry measurements demonstrated that protons shifted the voltage dependence of S4 movement to more depolarized potentials. The data indicate a site and mechanism of action for protons on hERG activation gating; protonation of D456, D460 and D509 disrupts interactions between these residues and S4 gating charges to destabilize the activated configuration of S4.

  17. Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

    PubMed

    Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

    2018-04-18

    Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

  18. Optimal dynamic voltage scaling for wireless sensor nodes with real-time constraints

    NASA Astrophysics Data System (ADS)

    Cassandras, Christos G.; Zhuang, Shixin

    2005-11-01

    Sensors are increasingly embedded in manufacturing systems and wirelessly networked to monitor and manage operations ranging from process and inventory control to tracking equipment and even post-manufacturing product monitoring. In building such sensor networks, a critical issue is the limited and hard to replenish energy in the devices involved. Dynamic voltage scaling is a technique that controls the operating voltage of a processor to provide desired performance while conserving energy and prolonging the overall network's lifetime. We consider such power-limited devices processing time-critical tasks which are non-preemptive, aperiodic and have uncertain arrival times. We treat voltage scaling as a dynamic optimization problem whose objective is to minimize energy consumption subject to hard or soft real-time execution constraints. In the case of hard constraints, we build on prior work (which engages a voltage scaling controller at task completion times) by developing an intra-task controller that acts at all arrival times of incoming tasks. We show that this optimization problem can be decomposed into two simpler ones whose solution leads to an algorithm that does not actually require solving any nonlinear programming problems. In the case of soft constraints, this decomposition must be partly relaxed, but it still leads to a scalable (linear in the number of tasks) algorithm. Simulation results are provided to illustrate performance improvements in systems with intra-task controllers compared to uncontrolled systems or those using inter-task control.

  19. Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

    PubMed

    Santos-Sacchi, Joseph; Song, Lei

    2016-06-07

    In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

  20. High-fidelity optical reporting of neuronal electrical activity with an ultrafast fluorescent voltage sensor

    PubMed Central

    St-Pierre, François; Marshall, Jesse D; Yang, Ying; Gong, Yiyang; Schnitzer, Mark J; Lin, Michael Z

    2015-01-01

    Accurate optical reporting of electrical activity in genetically defined neuronal populations is a long-standing goal in neuroscience. Here we describe Accelerated Sensor of Action Potentials 1 (ASAP1), a novel voltage sensor design in which a circularly permuted green fluorescent protein is inserted within an extracellular loop of a voltage-sensing domain, rendering fluorescence responsive to membrane potential. ASAP1 demonstrates on- and off- kinetics of 2.1 and 2.0 ms, reliably detects single action potentials and subthreshold potential changes, and tracks trains of action potential waveforms up to 200 Hz in single trials. With a favorable combination of brightness, dynamic range, and speed, ASAP1 enables continuous monitoring of membrane potential in neurons at KHz frame rates using standard epifluorescence microscopy. PMID:24755780

  1. PIP2-dependent coupling is prominent in Kv7.1 due to weakened interactions between S4-S5 and S6

    NASA Astrophysics Data System (ADS)

    Kasimova, Marina A.; Zaydman, Mark A.; Cui, Jianmin; Tarek, Mounir

    2015-01-01

    Among critical aspects of voltage-gated potassium (Kv) channels' functioning is the effective communication between their two composing domains, the voltage sensor (VSD) and the pore. This communication, called coupling, might be transmitted directly through interactions between these domains and, as recently proposed, indirectly through interactions with phosphatidylinositol-4,5-bisphosphate (PIP2), a minor lipid of the inner plasma membrane leaflet. Here, we show how the two components of coupling, mediated by protein-protein or protein-lipid interactions, both contribute in the Kv7.1 functioning. On the one hand, using molecular dynamics simulations, we identified a Kv7.1 PIP2 binding site that involves residues playing a key role in PIP2-dependent coupling. On the other hand, combined theoretical and experimental approaches have shown that the direct interaction between the segments of the VSD (S4-S5) and the pore (S6) is weakened by electrostatic repulsion. Finally, we conclude that due to weakened protein-protein interactions, the PIP2-dependent coupling is especially prominent in Kv7.1.

  2. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor.

    PubMed

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-27

    Few-layer MoS 2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS 2 /Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS 2 /SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS 2 -based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ∼50% RH), with good repeatability and selectivity of the MoS 2 /SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS 2 /SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  3. Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

    NASA Astrophysics Data System (ADS)

    Wu, Di; Lou, Zhenhua; Wang, Yuange; Xu, Tingting; Shi, Zhifeng; Xu, Junmin; Tian, Yongtao; Li, Xinjian

    2017-10-01

    Few-layer MoS2 thin films were synthesized by a two-step thermal decomposition process. In addition, MoS2/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS2/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS2-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ˜50% RH), with good repeatability and selectivity of the MoS2/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS2/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.

  4. Conversion of the sensor kinase DcuS of Escherichia coli of the DcuB/DcuS sensor complex to the C4 -dicarboxylate responsive form by the transporter DcuB.

    PubMed

    Wörner, Sebastian; Strecker, Alexander; Monzel, Christian; Zeltner, Matthias; Witan, Julian; Ebert-Jung, Andrea; Unden, Gottfried

    2016-12-01

    The sensor kinase DcuS of Escherichia coli co-operates under aerobic conditions with the C 4 -dicarboxylate transporter DctA to form the DctA/DcuS sensor complex. Under anaerobic conditions C 4 -dicarboxylate transport in fumarate respiration is catalyzed by C 4 -dicarboxylate/fumarate antiporter DcuB. (i) DcuB interacted with DcuS as demonstrated by a bacterial two-hybrid system (BACTH) and by co-chromatography of the solubilized membrane-proteins (mHPINE assay). (ii) In the DcuB/DcuS complex only DcuS served as the sensor since mutations in the substrate site of DcuS changed substrate specificity of sensing, and substrates maleate or 3-nitropropionate induced DcuS response without affecting the fumarate site of DcuB. (iii) The half-maximal concentration for induction of DcuS by fumarate (1 to 2 mM) and the corresponding K m for transport (50 µM) differ by a factor of 20 to 40. Therefore, the fumarate sites are different in transport and sensing. (iv) Increasing levels of DcuB converted DcuS from the permanent ON (DcuB deficient) state to the fumarate responsive form. Overall, the data show that DcuS and DcuB form a DcuB/DcuS complex representing the C 4 -dicarboxylate responsive form, and that the sensory site of the complex is located in DcuS whereas DcuB is required for converting DcuS to the sensory competent state. © 2016 Society for Applied Microbiology and John Wiley & Sons Ltd.

  5. Mutations in the voltage-sensing domain affect the alternative ion permeation pathway in the TRPM3 channel.

    PubMed

    Held, Katharina; Gruss, Fabian; Aloi, Vincenzo Davide; Janssens, Annelies; Ulens, Chris; Voets, Thomas; Vriens, Joris

    2018-03-31

    Mutagenesis at positively charged amino acids (arginines and lysines) (R1-R4) in the voltage-sensor domain (transmembrane segment (S) 4) of voltage-gated Na + , K + and Ca 2+ channels can lead to an alternative ion permeation pathway distinct from the central pore. Recently, a non-canonical ion permeation pathway was described in TRPM3, a member of the transient receptor potential (TRP) superfamily. The non-canonical pore exists in the native TRPM3 channel and can be activated by co-stimulation of the endogenous agonist pregnenolone sulphate and the antifungal drug clotrimazole or by stimulation of the synthetic agonist CIM0216. Alignment of the voltage sensor of Shaker K + channels with the entire TRPM3 sequence revealed the highest degree of similarity in the putative S4 region of TRPM3, and suggested that only one single gating charge arginine (R2) in the putative S4 region is conserved. Mutagenesis studies in the voltage-sensing domain of TRPM3 revealed several residues in the voltage sensor (S4) as well as in S1 and S3 that are crucial for the occurrence of the non-canonical inward currents. In conclusion, this study provides evidence for the involvement of the voltage-sensing domain of TRPM3 in the formation of an alternative ion permeation pathway. Transient receptor potential (TRP) channels are cationic channels involved in a broad array of functions, including homeostasis, motility and sensory functions. TRP channel subunits consist of six transmembrane segments (S1-S6), and form tetrameric channels with a central pore formed by the region encompassing S5 and S6. Recently, evidence was provided for the existence of an alternative ion permeation pathway in TRPM3, which allows large inward currents upon hyperpolarization independently of the central pore. However, very little knowledge is available concerning the localization of this alternative pathway in the native TRPM3 channel protein. Guided by sequence homology with Shaker K + channels, in which

  6. NaV1.4 mutations cause hypokalaemic periodic paralysis by disrupting IIIS4 movement during recovery

    PubMed Central

    Lehmann-Horn, Frank; Fan, Chunxiang; Wolf, Markus; Winston, Vern; Merlini, Luciano

    2014-01-01

    Hypokalaemic periodic paralysis is typically associated with mutations of voltage sensor residues in calcium or sodium channels of skeletal muscle. To date, causative sodium channel mutations have been studied only for the two outermost arginine residues in S4 voltage sensor segments of domains I to III. These mutations produce depolarization of skeletal muscle fibres in response to reduced extracellular potassium, owing to an inward cation-selective gating pore current activated by hyperpolarization. Here, we describe mutations of the third arginine, R3, in the domain III voltage sensor i.e. an R1135H mutation which was found in two patients in separate families and a novel R1135C mutation identified in a third patient in another family. Muscle fibres from a patient harbouring the R1135H mutation showed increased depolarization tendency at normal and reduced extracellular potassium compatible with the diagnosis. Additionally, amplitude and rise time of action potentials were reduced compared with controls, even for holding potentials at which all NaV1.4 are fully recovered from inactivation. These findings may be because of an outward omega current activated at positive potentials. Expression of R1135H/C in mammalian cells indicates further gating defects that include significantly enhanced entry into inactivation and prolonged recovery that may additionally contribute to action potential inhibition at the physiological resting potential. After S4 immobilization in the outward position, mutant channels produce an inward omega current that most likely depolarizes the resting potential and produces the hypokalaemia-induced weakness. Gating current recordings reveal that mutations at R3 inhibit S4 deactivation before recovery, and molecular dynamics simulations suggest that this defect is caused by disrupted interactions of domain III S2 countercharges with S4 arginines R2 to R4 during repolarization of the membrane. This work reveals a novel mechanism of disrupted S

  7. Design and modeling of magnetically driven electric-field sensor for non-contact DC voltage measurement in electric power systems.

    PubMed

    Wang, Decai; Li, Ping; Wen, Yumei

    2016-10-01

    In this paper, the design and modeling of a magnetically driven electric-field sensor for non-contact DC voltage measurement are presented. The magnetic drive structure of the sensor is composed of a small solenoid and a cantilever beam with a cylindrical magnet mounted on it. The interaction of the magnet and the solenoid provides the magnetic driving force for the sensor. Employing magnetic drive structure brings the benefits of low driving voltage and large vibrating displacement, which consequently results in less interference from the drive signal. In the theoretical analyses, the capacitance calculation model between the wire and the sensing electrode is built. The expression of the magnetic driving force is derived by the method of linear fitting. The dynamical model of the magnetic-driven cantilever beam actuator is built by using Euler-Bernoulli theory and distributed parameter method. Taking advantage of the theoretical model, the output voltage of proposed sensor can be predicted. The experimental results are in good agreement with the theoretical results. The proposed sensor shows a favorable linear response characteristic. The proposed sensor has a measuring sensitivity of 9.87 μV/(V/m) at an excitation current of 37.5 mA. The electric field intensity resolution can reach 10.13 V/m.

  8. Functional diversity of voltage-sensing phosphatases in two urodele amphibians.

    PubMed

    Mutua, Joshua; Jinno, Yuka; Sakata, Souhei; Okochi, Yoshifumi; Ueno, Shuichi; Tsutsui, Hidekazu; Kawai, Takafumi; Iwao, Yasuhiro; Okamura, Yasushi

    2014-07-16

    Voltage-sensing phosphatases (VSPs) share the molecular architecture of the voltage sensor domain (VSD) with voltage-gated ion channels and the phosphoinositide phosphatase region with the phosphatase and tensin homolog (PTEN), respectively. VSPs enzymatic activities are regulated by the motions of VSD upon depolarization. The physiological role of these proteins has remained elusive, and insights may be gained by investigating biological variations in different animal species. Urodele amphibians are vertebrates with potent activities of regeneration and also show diverse mechanisms of polyspermy prevention. We cloned cDNAs of VSPs from the testes of two urodeles; Hynobius nebulosus and Cynops pyrrhogaster, and compared their expression and voltage-dependent activation. Their molecular architecture is highly conserved in both Hynobius VSP (Hn-VSP) and Cynops VSP (Cp-VSP), including the positively-charged arginine residues in the S4 segment of the VSD and the enzymatic active site for substrate binding, yet the C-terminal C2 domain of Hn-VSP is significantly shorter than that of Cp-VSP and other VSP orthologs. RT-PCR analysis showed that gene expression pattern was distinct between two VSPs. The voltage sensor motions and voltage-dependent phosphatase activities were investigated electrophysiologically by expression in Xenopus oocytes. Both VSPs showed "sensing" currents, indicating that their voltage sensor domains are functional. The phosphatase activity of Cp-VSP was found to be voltage dependent, as shown by its ability to regulate the conductance of coexpressed GIRK2 channels, but Hn-VSP lacked such phosphatase activity due to the truncation of its C2 domain. © 2014 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

  9. Wireless Sensor Network for Radiometric Detection and Assessment of Partial Discharge in High-Voltage Equipment

    NASA Astrophysics Data System (ADS)

    Upton, D. W.; Saeed, B. I.; Mather, P. J.; Lazaridis, P. I.; Vieira, M. F. Q.; Atkinson, R. C.; Tachtatzis, C.; Garcia, M. S.; Judd, M. D.; Glover, I. A.

    2018-03-01

    Monitoring of partial discharge (PD) activity within high-voltage electrical environments is increasingly used for the assessment of insulation condition. Traditional measurement techniques employ technologies that either require off-line installation or have high power consumption and are hence costly. A wireless sensor network is proposed that utilizes only received signal strength to locate areas of PD activity within a high-voltage electricity substation. The network comprises low-power and low-cost radiometric sensor nodes which receive the radiation propagated from a source of PD. Results are reported from several empirical tests performed within a large indoor environment and a substation environment using a network of nine sensor nodes. A portable PD source emulator was placed at multiple locations within the network. Signal strength measured by the nodes is reported via WirelessHART to a data collection hub where it is processed using a location algorithm. The results obtained place the measured location within 2 m of the actual source location.

  10. Mapping the interaction site for the tarantula toxin hainantoxin-IV (β-TRTX-Hn2a) in the voltage sensor module of domain II of voltage-gated sodium channels.

    PubMed

    Cai, Tianfu; Luo, Ji; Meng, Er; Ding, Jiuping; Liang, Songping; Wang, Sheng; Liu, Zhonghua

    2015-06-01

    Peptide toxins often have pharmacological applications and are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a group of potential VGSC inhibitors have been reported from tarantula venoms, little is known about the mechanism of their interaction with VGSCs. In this study, we showed that hainantoxin-IV (β-TRTX-Hn2a, HNTX-IV in brief), a 35-residue peptide from Ornithoctonus hainana venom, preferentially inhibited rNav1.2, rNav1.3 and hNav1.7 compared with rNav1.4 and hNav1.5. hNav1.7 was the most sensitive to HNTX-IV (IC50∼21nM). In contrast to many other tarantula toxins that affect VGSCs, HNTX-IV at subsaturating concentrations did not alter activation and inactivation kinetics in the physiological range of voltages, while very large depolarization above +70mV could partially activate toxin-bound hNav1.7 channel, indicating that HNTX-IV acts as a gating modifier rather than a pore blocker. Site-directed mutagenesis indicated that the toxin bound to site 4, which was located on the extracellular S3-S4 linker of hNav1.7 domain II. Mutants E753Q, D816N and E818Q of hNav1.7 decreased toxin affinity for hNav1.7 by 2.0-, 3.3- and 130-fold, respectively. In silico docking indicated that a three-toed claw substructure formed by residues with close contacts in the interface between HNTX-IV and hNav1.7 domain II stabilized the toxin-channel complex, impeding movement of the domain II voltage sensor and inhibiting hNav1.7 activation. Our data provide structural details for structure-based drug design and a useful template for the design of highly selective inhibitors of a specific subtype of VGSCs. Copyright © 2014 Elsevier Inc. All rights reserved.

  11. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

    PubMed Central

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-01-01

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

  12. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

    PubMed

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-07-05

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

  13. The tarantula toxins ProTx-II and huwentoxin-IV differentially interact with human Nav1.7 voltage sensors to inhibit channel activation and inactivation.

    PubMed

    Xiao, Yucheng; Blumenthal, Kenneth; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2010-12-01

    The voltage-gated sodium channel Na(v)1.7 plays a crucial role in pain, and drugs that inhibit hNa(v)1.7 may have tremendous therapeutic potential. ProTx-II and huwentoxin-IV (HWTX-IV), cystine knot peptides from tarantula venoms, preferentially block hNa(v)1.7. Understanding the interactions of these toxins with sodium channels could aid the development of novel pain therapeutics. Whereas both ProTx-II and HWTX-IV have been proposed to preferentially block hNa(v)1.7 activation by trapping the domain II voltage-sensor in the resting configuration, we show that specific residues in the voltage-sensor paddle of domain II play substantially different roles in determining the affinities of these toxins to hNa(v)1.7. The mutation E818C increases ProTx-II's and HWTX-IV's IC(50) for block of hNa(v)1.7 currents by 4- and 400-fold, respectively. In contrast, the mutation F813G decreases ProTx-II affinity by 9-fold but has no effect on HWTX-IV affinity. It is noteworthy that we also show that ProTx-II, but not HWTX-IV, preferentially interacts with hNa(v)1.7 to impede fast inactivation by trapping the domain IV voltage-sensor in the resting configuration. Mutations E1589Q and T1590K in domain IV each decreased ProTx-II's IC(50) for impairment of fast inactivation by ~6-fold. In contrast mutations D1586A and F1592A in domain-IV increased ProTx-II's IC(50) for impairment of fast inactivation by ~4-fold. Our results show that whereas ProTx-II and HWTX-IV binding determinants on domain-II may overlap, domain II plays a much more crucial role for HWTX-IV, and contrary to what has been proposed to be a guiding principle of sodium channel pharmacology, molecules do not have to exclusively target the domain IV voltage-sensor to influence sodium channel inactivation.

  14. Differentiation of DctA and DcuS function in the DctA/DcuS sensor complex of Escherichia coli: function of DctA as an activity switch and of DcuS as the C4-dicarboxylate sensor.

    PubMed

    Steinmetz, Philipp Aloysius; Wörner, Sebastian; Unden, Gottfried

    2014-10-01

    The C4-dicarboxylate responsiveness of the sensor kinase DcuS is only provided in concert with C4-dicarboxylate transporters DctA or DcuB. The individual roles of DctA and DcuS for the function of the DctA/DcuS sensor complex were analysed. (i) Variant DctA(S380D) in the C4-dicarboxylate site of DctA conferred C4-dicarboxylate sensitivity to DcuS in the DctA/DcuS complex, but was deficient for transport and for growth on C4-dicarboxylates. Consequently transport activity of DctA is not required for its function in the sensor complex. (ii) Effectors like fumarate induced expression of DctA/DcuS-dependent reporter genes (dcuB-lacZ) and served as substrates of DctA, whereas citrate served only as an inducer of dcuB-lacZ without affecting DctA function. (iii) Induction of dcuB-lacZ by fumarate required 33-fold higher concentrations than for transport by DctA (Km  = 30 μM), demonstrating the existence of different fumarate sites for both processes. (iv) In titration experiments with increasing dctA expression levels, the effect of DctA on the C4-dicarboxylate sensitivity of DcuS was concentration dependent. The data uniformly show that C4-dicarboxylate sensing by DctA/DcuS resides in DcuS, and that DctA serves as an activity switch. Shifting of DcuS from the constitutive ON to the C4-dicarboxylate responsive state, required presence of DctA but not transport by DctA. © 2014 John Wiley & Sons Ltd.

  15. Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

    PubMed Central

    Cui, Jianmin

    2016-01-01

    Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

  16. 3' Phosphatase activity toward phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] by voltage-sensing phosphatase (VSP).

    PubMed

    Kurokawa, Tatsuki; Takasuga, Shunsuke; Sakata, Souhei; Yamaguchi, Shinji; Horie, Shigeo; Homma, Koichi J; Sasaki, Takehiko; Okamura, Yasushi

    2012-06-19

    Voltage-sensing phosphatases (VSPs) consist of a voltage-sensor domain and a cytoplasmic region with remarkable sequence similarity to phosphatase and tensin homolog deleted on chromosome 10 (PTEN), a tumor suppressor phosphatase. VSPs dephosphorylate the 5' position of the inositol ring of both phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P(3)] and phosphatidylinositol 4,5-bisphosphate [PI(4,5)P(2)] upon voltage depolarization. However, it is unclear whether VSPs also have 3' phosphatase activity. To gain insights into this question, we performed in vitro assays of phosphatase activities of Ciona intestinalis VSP (Ci-VSP) and transmembrane phosphatase with tensin homology (TPTE) and PTEN homologous inositol lipid phosphatase (TPIP; one human ortholog of VSP) with radiolabeled PI(3,4,5)P(3). TLC assay showed that the 3' phosphate of PI(3,4,5)P(3) was not dephosphorylated, whereas that of phosphatidylinositol 3,4-bisphosphate [PI(3,4)P(2)] was removed by VSPs. Monitoring of PI(3,4)P(2) levels with the pleckstrin homology (PH) domain from tandem PH domain-containing protein (TAPP1) fused with GFP (PH(TAPP1)-GFP) by confocal microscopy in amphibian oocytes showed an increase of fluorescence intensity during depolarization to 0 mV, consistent with 5' phosphatase activity of VSP toward PI(3,4,5)P(3). However, depolarization to 60 mV showed a transient increase of GFP fluorescence followed by a decrease, indicating that, after PI(3,4,5)P(3) is dephosphorylated at the 5' position, PI(3,4)P(2) is then dephosphorylated at the 3' position. These results suggest that substrate specificity of the VSP changes with membrane potential.

  17. Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

    NASA Astrophysics Data System (ADS)

    Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

    2015-05-01

    Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

  18. Molecular Interactions between Tarantula Toxins and Low-Voltage-Activated Calcium Channels

    PubMed Central

    Salari, Autoosa; Vega, Benjamin S.; Milescu, Lorin S.; Milescu, Mirela

    2016-01-01

    Few gating-modifier toxins have been reported to target low-voltage-activated (LVA) calcium channels, and the structural basis of toxin sensitivity remains incompletely understood. Studies of voltage-gated potassium (Kv) channels have identified the S3b–S4 “paddle motif,” which moves at the protein-lipid interface to drive channel opening, as the target for these amphipathic neurotoxins. Voltage-gated calcium (Cav) channels contain four homologous voltage sensor domains, suggesting multiple toxin binding sites. We show here that the S3–S4 segments within Cav3.1 can be transplanted into Kv2.1 to examine their individual contributions to voltage sensing and pharmacology. With these results, we now have a more complete picture of the conserved nature of the paddle motif in all three major voltage-gated ion channel types (Kv, Nav, and Cav). When screened with tarantula toxins, the four paddle sequences display distinct toxin binding properties, demonstrating that gating-modifier toxins can bind to Cav channels in a domain specific fashion. Domain III was the most commonly and strongly targeted, and mutagenesis revealed an acidic residue that is important for toxin binding. We also measured the lipid partitioning strength of all toxins tested and observed a positive correlation with their inhibition of Cav3.1, suggesting a key role for membrane partitioning. PMID:27045173

  19. Coupling of the phosphatase activity of Ci-VSP to its voltage sensor activity over the entire range of voltage sensitivity

    PubMed Central

    Sakata, Souhei; Hossain, Md. Israil; Okamura, Yasushi

    2011-01-01

    Abstract The voltage sensing phosphatase Ci-VSP is composed of a voltage sensor domain (VSD) and a cytoplasmic phosphatase domain. Upon membrane depolarization, movement of the VSD triggers the enzyme's phosphatase activity. To gain further insight into its operating mechanism, we studied the PI(4,5)P2 phosphatase activity of Ci-VSP expressed in Xenopus oocytes over the entire range of VSD motion by assessing the activity of coexpressed Kir2.1 channels or the fluorescence signal from a pleckstrin homology domain fused with green fluorescent protein (GFP) (PHPLC-GFP). Both assays showed greater phosphatase activity at 125 mV than at 75 mV, which corresponds to ‘sensing’ charges that were 90% and 75% of maximum, respectively. On the other hand, the activity at 160 mV (corresponding to 98% of the maximum ‘sensing’ charge) was indistinguishable from that at 125 mV. Modelling the kinetics of the PHPLC-GFP fluorescence revealed that its time course was dependent on both the level of Ci-VSP expression and the diffusion of PHPLC-GFP beneath the plasma membrane. Enzyme activity was calculated by fitting the time course of PHPLC-GFP fluorescence into the model. The voltage dependence of the enzyme activity was superimposable on the Q–V curve, which is consistent with the idea that the enzyme activity is tightly coupled to VSD movement over the entire range of membrane potentials that elicit VSD movement. PMID:21486809

  20. A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

    PubMed

    Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

    2015-02-13

    An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

  1. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider

    PubMed Central

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-01-01

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids. PMID:29149085

  2. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

    PubMed

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-11-17

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

  3. Tryptophan scanning mutagenesis of the HERG K+ channel: the S4 domain is loosely packed and likely to be lipid exposed

    PubMed Central

    Subbiah, Rajesh N; Kondo, Mari; Campbell, Terence J; Vandenberg, Jamie I

    2005-01-01

    Inherited mutations or drug-induced block of voltage-gated ion channels, including the human ether-à-go-go-related gene (HERG) K+ channel, are significant causes of malignant arrhythmias and sudden death. The fourth transmembrane domain (S4) of these channels contains multiple positive charges that move across the membrane electric field in response to changes in transmembrane voltage. In HERG K+ channels, the movement of the S4 domain across the transmembrane electric field is particularly slow. To examine the basis of the slow movement of the HERG S4 domain and specifically to probe the relationship between the S4 domain with the lipid bilayer and rest of the channel protein, we individually mutated each of the S4 amino acids in HERG (L524–L539) to tryptophan, and characterized the activation and deactivation properties of the mutant channels in Xenopus oocytes, using two-electrode voltage-clamp methods. Tryptophan has a large bulky hydrophobic sidechain and so should be tolerated at positions that interact with lipid, but not at positions involved in close protein–protein interactions. Significantly, we found that all S4 tryptophan mutants were functional. These data indicate that the S4 domain is loosely packed within the rest of the voltage sensor domain and is likely to be lipid exposed. Further, we identified residues K525, R528 and K538 as being the most important for slow activation of the channels. PMID:16166152

  4. IEEE-802.15.4-based low-power body sensor node with RF energy harvester.

    PubMed

    Tran, Thang Viet; Chung, Wan-Young

    2014-01-01

    This paper proposes the design and implementation of a low-voltage and low-power body sensor node based on the IEEE 802.15.4 standard to collect electrocardiography (ECG) and photoplethysmography (PPG) signals. To achieve compact size, low supply voltage, and low power consumption, the proposed platform is integrated into a ZigBee mote, which contains a DC-DC booster, a PPG sensor interface module, and an ECG front-end circuit that has ultra-low current consumption. The input voltage of the proposed node is very low and has a wide range, from 0.65 V to 3.3 V. An RF energy harvester is also designed to charge the battery during the working mode or standby mode of the node. The power consumption of the proposed node reaches 14 mW in working mode to prolong the battery lifetime. The software is supported by the nesC language under the TinyOS environment, which enables the proposed node to be easily configured to function as an individual health monitoring node or a node in a wireless body sensor network (BSN). The proposed node is used to set up a wireless BSN that can simultaneously collect ECG and PPG signals and monitor the results on the personal computer.

  5. Genetically expressed voltage sensor ArcLight for imaging large scale cortical activity in the anesthetized and awake mouse

    PubMed Central

    Borden, Peter Y.; Ortiz, Alex D.; Waiblinger, Christian; Sederberg, Audrey J.; Morrissette, Arthur E.; Forest, Craig R.; Jaeger, Dieter; Stanley, Garrett B.

    2017-01-01

    Abstract. With the recent breakthrough in genetically expressed voltage indicators (GEVIs), there has been a tremendous demand to determine the capabilities of these sensors in vivo. Novel voltage sensitive fluorescent proteins allow for direct measurement of neuron membrane potential changes through changes in fluorescence. Here, we utilized ArcLight, a recently developed GEVI, and examined the functional characteristics in the widely used mouse somatosensory whisker pathway. We measured the resulting evoked fluorescence using a wide-field microscope and a CCD camera at 200 Hz, which enabled voltage recordings over the entire cortical region with high temporal resolution. We found that ArcLight produced a fluorescent response in the S1 barrel cortex during sensory stimulation at single whisker resolution. During wide-field cortical imaging, we encountered substantial hemodynamic noise that required additional post hoc processing through noise subtraction techniques. Over a period of 28 days, we found clear and consistent ArcLight fluorescence responses to a simple sensory input. Finally, we demonstrated the use of ArcLight to resolve cortical S1 sensory responses in the awake mouse. Taken together, our results demonstrate the feasibility of ArcLight as a measurement tool for mesoscopic, chronic imaging. PMID:28491905

  6. Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

    NASA Astrophysics Data System (ADS)

    Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

    2018-04-01

    In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

  7. Flight Demonstration of a Shock Location Sensor Using Constant Voltage Hot-Film Anemometry

    NASA Technical Reports Server (NTRS)

    Moes, Timothy R.; Sarma, Garimella R.; Mangalam, Siva M.

    1997-01-01

    Flight tests have demonstrated the effectiveness of an array of hot-film sensors using constant voltage anemometry to determine shock position on a wing or aircraft surface at transonic speeds. Flights were conducted at the NASA Dryden Flight Research Center using the F-15B aircraft and Flight Test Fixture (FTF). A modified NACA 0021 airfoil was attached to the side of the FTF, and its upper surface was instrumented to correlate shock position with pressure and hot-film sensors. In the vicinity of the shock-induced pressure rise, test results consistently showed the presence of a minimum voltage in the hot-film anemometer outputs. Comparing these results with previous investigations indicate that hot-film anemometry can identify the location of the shock-induced boundary layer separation. The flow separation occurred slightly forward of the shock- induced pressure rise for a laminar boundary layer and slightly aft of the start of the pressure rise when the boundary layer was tripped near the airfoil leading edge. Both minimum mean output and phase reversal analyses were used to identify the shock location.

  8. Enhanced low current, voltage, and power dissipation measurements via Arduino Uno microcontroller with modified commercially available sensors

    NASA Astrophysics Data System (ADS)

    Tanner, Meghan; Eckel, Ryan; Senevirathne, Indrajith

    The versatility, simplicity, and robustness of Arduino microcontroller architecture have won a huge following with increasingly serious engineering and physical science applications. Arduino microcontroller environment coupled with commercially available sensors have been used to systematically measure, record, and analyze low currents, low voltages and corresponding dissipated power for assessing secondary physical properties in a diverse array of engineering systems. Setup was assembled via breadboard, wire, and simple soldering with an Arduino Uno with ATmega328P microcontroller connected to a PC. The microcontroller was programmed with Arduino Software while the bootloader was used to upload the code. Commercial Hall effect current sensor modules ACS712 and INA169 current shunt monitor was used to measure corresponding low to ultra-low currents and voltages. Stable measurement data was obtained via sensors and compared with corresponding oscilloscope measurements to assess reliability and uncertainty. Sensor breakout boards were modified to enhance the sensitivity of the measurements and to expand the applicability. Discussion of these measurements will focus on capabilities, capacities and limitations of the systems with examples of possible applications. Lock Haven Nanotechnology Program.

  9. 3′ Phosphatase activity toward phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] by voltage-sensing phosphatase (VSP)

    PubMed Central

    Kurokawa, Tatsuki; Takasuga, Shunsuke; Sakata, Souhei; Yamaguchi, Shinji; Horie, Shigeo; Homma, Koichi J.; Sasaki, Takehiko; Okamura, Yasushi

    2012-01-01

    Voltage-sensing phosphatases (VSPs) consist of a voltage-sensor domain and a cytoplasmic region with remarkable sequence similarity to phosphatase and tensin homolog deleted on chromosome 10 (PTEN), a tumor suppressor phosphatase. VSPs dephosphorylate the 5′ position of the inositol ring of both phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P3] and phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] upon voltage depolarization. However, it is unclear whether VSPs also have 3′ phosphatase activity. To gain insights into this question, we performed in vitro assays of phosphatase activities of Ciona intestinalis VSP (Ci-VSP) and transmembrane phosphatase with tensin homology (TPTE) and PTEN homologous inositol lipid phosphatase (TPIP; one human ortholog of VSP) with radiolabeled PI(3,4,5)P3. TLC assay showed that the 3′ phosphate of PI(3,4,5)P3 was not dephosphorylated, whereas that of phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] was removed by VSPs. Monitoring of PI(3,4)P2 levels with the pleckstrin homology (PH) domain from tandem PH domain-containing protein (TAPP1) fused with GFP (PHTAPP1-GFP) by confocal microscopy in amphibian oocytes showed an increase of fluorescence intensity during depolarization to 0 mV, consistent with 5′ phosphatase activity of VSP toward PI(3,4,5)P3. However, depolarization to 60 mV showed a transient increase of GFP fluorescence followed by a decrease, indicating that, after PI(3,4,5)P3 is dephosphorylated at the 5′ position, PI(3,4)P2 is then dephosphorylated at the 3′ position. These results suggest that substrate specificity of the VSP changes with membrane potential. PMID:22645351

  10. Mechanistic Basis for Type 2 Long QT Syndrome Caused by KCNH2 Mutations that Disrupt Conserved Arginine Residue in the Voltage Sensor

    PubMed Central

    McBride, Christie M.; Smith, Ashley M.; Smith, Jennifer L.; Reloj, Allison R.; Velasco, Ellyn J.; Powell, Jonathan; Elayi, Claude S.; Bartos, Daniel C.; Burgess, Don E.

    2013-01-01

    KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (IKr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing IKr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (IKv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients’ genotypes) mostly corrected the changes in IKv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing IKr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease IKr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient. PMID:23546015

  11. A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

    PubMed

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

  12. A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

    PubMed Central

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

  13. Domain-to-domain coupling in voltage-sensing phosphatase.

    PubMed

    Sakata, Souhei; Matsuda, Makoto; Kawanabe, Akira; Okamura, Yasushi

    2017-01-01

    Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor and a cytoplasmic enzyme region. The enzyme region contains the phosphatase and C2 domains, is structurally similar to the tumor suppressor phosphatase PTEN, and catalyzes the dephosphorylation of phosphoinositides. The transmembrane voltage sensor is connected to the phosphatase through a short linker region, and phosphatase activity is induced upon membrane depolarization. Although the detailed molecular characteristics of the voltage sensor domain and the enzyme region have been revealed, little is known how these two regions are coupled. In addition, it is important to know whether mechanism for coupling between the voltage sensor domain and downstream effector function is shared among other voltage sensor domain-containing proteins. Recent studies in which specific amino acid sites were genetically labeled using a fluorescent unnatural amino acid have enabled detection of the local structural changes in the cytoplasmic region of Ciona intestinalis VSP that occur with a change in membrane potential. The results of those studies provide novel insight into how the enzyme activity of the cytoplasmic region of VSP is regulated by the voltage sensor domain.

  14. Domain-to-domain coupling in voltage-sensing phosphatase

    PubMed Central

    Sakata, Souhei; Matsuda, Makoto; Kawanabe, Akira; Okamura, Yasushi

    2017-01-01

    Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor and a cytoplasmic enzyme region. The enzyme region contains the phosphatase and C2 domains, is structurally similar to the tumor suppressor phosphatase PTEN, and catalyzes the dephosphorylation of phosphoinositides. The transmembrane voltage sensor is connected to the phosphatase through a short linker region, and phosphatase activity is induced upon membrane depolarization. Although the detailed molecular characteristics of the voltage sensor domain and the enzyme region have been revealed, little is known how these two regions are coupled. In addition, it is important to know whether mechanism for coupling between the voltage sensor domain and downstream effector function is shared among other voltage sensor domain-containing proteins. Recent studies in which specific amino acid sites were genetically labeled using a fluorescent unnatural amino acid have enabled detection of the local structural changes in the cytoplasmic region of Ciona intestinalis VSP that occur with a change in membrane potential. The results of those studies provide novel insight into how the enzyme activity of the cytoplasmic region of VSP is regulated by the voltage sensor domain. PMID:28744425

  15. Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

    PubMed

    Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

    2012-06-06

    Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  16. Reciprocal voltage sensor-to-pore coupling leads to potassium channel C-type inactivation

    NASA Astrophysics Data System (ADS)

    Conti, Luca; Renhorn, Jakob; Gabrielsson, Anders; Turesson, Fredrik; Liin, Sara I.; Lindahl, Erik; Elinder, Fredrik

    2016-06-01

    Voltage-gated potassium channels open at depolarized membrane voltages. A prolonged depolarization causes a rearrangement of the selectivity filter which terminates the conduction of ions - a process called slow or C-type inactivation. How structural rearrangements in the voltage-sensor domain (VSD) cause alteration in the selectivity filter, and vice versa, are not fully understood. We show that pulling the pore domain of the Shaker potassium channel towards the VSD by a Cd2+ bridge accelerates C-type inactivation. Molecular dynamics simulations show that such pulling widens the selectivity filter and disrupts the K+ coordination, a hallmark for C-type inactivation. An engineered Cd2+ bridge within the VSD also affect C-type inactivation. Conversely, a pore domain mutation affects VSD gating-charge movement. Finally, C-type inactivation is caused by the concerted action of distant amino acid residues in the pore domain. All together, these data suggest a reciprocal communication between the pore domain and the VSD in the extracellular portion of the channel.

  17. Fiber-optic voltage measuring system

    NASA Astrophysics Data System (ADS)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  18. Molecular mechanism of voltage sensing in voltage-gated proton channels

    PubMed Central

    Rebolledo, Santiago; Perez, Marta E.

    2013-01-01

    Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

  19. The voltage sensor of excitation–contraction coupling in mammals: Inactivation and interaction with Ca2+

    PubMed Central

    2017-01-01

    In skeletal muscle, the four-helix voltage-sensing modules (VSMs) of CaV1.1 calcium channels simultaneously gate two Ca2+ pathways: the CaV1.1 pore itself and the RyR1 calcium release channel in the sarcoplasmic reticulum. Here, to gain insight into the mechanism by which VSMs gate RyR1, we quantify intramembrane charge movement associated with VSM activation (sensing current) and gated Ca2+ release flux in single muscle cells of mice and rats. As found for most four-helix VSMs, upon sustained depolarization, rodent VSMs lose the ability to activate Ca2+ release channels opening; their properties change from a functionally capable mode, in which the mobile sensor charge is called charge 1, to an inactivated mode, charge 2, with a voltage dependence shifted toward more negative voltages. We find that charge 2 is promoted and Ca2+ release inactivated when resting, well-polarized muscle cells are exposed to low extracellular [Ca2+] and that the opposite occurs in high [Ca2+]. It follows that murine VSMs are partly inactivated at rest, which establishes the reduced availability of voltage sensing as a pathogenic mechanism in disorders of calcemia. We additionally find that the degree of resting inactivation is significantly different in two mouse strains, which underscores the variability of voltage sensor properties and their vulnerability to environmental conditions. Our studies reveal that the resting and activated states of VSMs are equally favored by extracellular Ca2+. Promotion by an extracellular species of two states of the VSM that differ in the conformation of the activation gate requires the existence of a second gate, inactivation, topologically extracellular and therefore accessible from outside regardless of the activation state. PMID:29021148

  20. Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Levinshtein, M. E., E-mail: melev@nimis.ioffe.ru; Ivanov, P. A.; Zhang, Q. J.

    The forward-pulse isothermal current–voltage characteristics of 4H-SiC junction barrier Schottky rectifiers (JBSs) with a nominal blocking voltage of 1700 V are measured in the temperature range from–80 to +90°C (193–363 K) up to current densities j of ~5600 A/cm{sup 2} at–80°C and 3000 A/cm{sup 2} at +90°C. In these measurements, the overheating of the structures relative to the ambient temperature, ΔT, did not exceed several degrees. At higher current densities, the effective injection of minority carriers (holes) into the base of the structures is observed, which is accompanied by the appearance of an S-type differential resistance. The pulsed isothermal current–voltagemore » characteristics are also measured at a temperature of 77 K.« less

  1. Reciprocal voltage sensor-to-pore coupling leads to potassium channel C-type inactivation

    PubMed Central

    Conti, Luca; Renhorn, Jakob; Gabrielsson, Anders; Turesson, Fredrik; Liin, Sara I; Lindahl, Erik; Elinder, Fredrik

    2016-01-01

    Voltage-gated potassium channels open at depolarized membrane voltages. A prolonged depolarization causes a rearrangement of the selectivity filter which terminates the conduction of ions – a process called slow or C-type inactivation. How structural rearrangements in the voltage-sensor domain (VSD) cause alteration in the selectivity filter, and vice versa, are not fully understood. We show that pulling the pore domain of the Shaker potassium channel towards the VSD by a Cd2+ bridge accelerates C-type inactivation. Molecular dynamics simulations show that such pulling widens the selectivity filter and disrupts the K+ coordination, a hallmark for C-type inactivation. An engineered Cd2+ bridge within the VSD also affect C-type inactivation. Conversely, a pore domain mutation affects VSD gating-charge movement. Finally, C-type inactivation is caused by the concerted action of distant amino acid residues in the pore domain. All together, these data suggest a reciprocal communication between the pore domain and the VSD in the extracellular portion of the channel. PMID:27278891

  2. Gating currents from Kv7 channels carrying neuronal hyperexcitability mutations in the voltage-sensing domain.

    PubMed

    Miceli, Francesco; Vargas, Ernesto; Bezanilla, Francisco; Taglialatela, Maurizio

    2012-03-21

    Changes in voltage-dependent gating represent a common pathogenetic mechanism for genetically inherited channelopathies, such as benign familial neonatal seizures or peripheral nerve hyperexcitability caused by mutations in neuronal K(v)7.2 channels. Mutation-induced changes in channel voltage dependence are most often inferred from macroscopic current measurements, a technique unable to provide a detailed assessment of the structural rearrangements underlying channel gating behavior; by contrast, gating currents directly measure voltage-sensor displacement during voltage-dependent gating. In this work, we describe macroscopic and gating current measurements, together with molecular modeling and molecular-dynamics simulations, from channels carrying mutations responsible for benign familial neonatal seizures and/or peripheral nerve hyperexcitability; K(v)7.4 channels, highly related to K(v)7.2 channels both functionally and structurally, were used for these experiments. The data obtained showed that mutations affecting charged residues located in the more distal portion of S(4) decrease the stability of the open state and the active voltage-sensing domain configuration but do not directly participate in voltage sensing, whereas mutations affecting a residue (R4) located more proximally in S(4) caused activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular mechanisms underlie the altered gating behavior of channels carrying disease-causing mutations at different voltage-sensing domain locations, thereby expanding our current view of the pathogenesis of neuronal hyperexcitability diseases. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  3. Modular chemiresistive sensor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Alam, Maksudul M.; Sampathkumaran, Uma

    The present invention relates to a modular chemiresistive sensor. In particular, a modular chemiresistive sensor for hypergolic fuel and oxidizer leak detection, carbon dioxide monitoring and detection of disease biomarkers. The sensor preferably has two gold or platinum electrodes mounted on a silicon substrate where the electrodes are connected to a power source and are separated by a gap of 0.5 to 4.0 .mu.M. A polymer nanowire or carbon nanotube spans the gap between the electrodes and connects the electrodes electrically. The electrodes are further connected to a circuit board having a processor and data storage, where the processor canmore » measure current and voltage values between the electrodes and compare the current and voltage values with current and voltage values stored in the data storage and assigned to particular concentrations of a pre-determined substance such as those listed above or a variety of other substances.« less

  4. Variable Rail Voltage Control of a Brushless DC (BLDC) Motor

    DTIC Science & Technology

    2013-01-01

    Variable Rail Voltage Control of a Brushless DC ( BLDC ) Motor by Yuan Chen, Joseph Conroy, and William Nothwang ARL-TR-6308 January 2013...TR-6308 January 2013 Variable Rail Voltage Control of a Brushless DC ( BLDC ) Motor Yuan Chen, Joseph Conroy, and William Nothwang Sensors...DATES COVERED (From - To) 4. TITLE AND SUBTITLE Variable Rail Voltage Control of a Brushless DC ( BLDC ) Motor 5a. CONTRACT NUMBER 5b. GRANT

  5. Free-energy landscape of ion-channel voltage-sensor-domain activation.

    PubMed

    Delemotte, Lucie; Kasimova, Marina A; Klein, Michael L; Tarek, Mounir; Carnevale, Vincenzo

    2015-01-06

    Voltage sensor domains (VSDs) are membrane-bound protein modules that confer voltage sensitivity to membrane proteins. VSDs sense changes in the transmembrane voltage and convert the electrical signal into a conformational change called activation. Activation involves a reorganization of the membrane protein charges that is detected experimentally as transient currents. These so-called gating currents have been investigated extensively within the theoretical framework of so-called discrete-state Markov models (DMMs), whereby activation is conceptualized as a series of transitions across a discrete set of states. Historically, the interpretation of DMM transition rates in terms of transition state theory has been instrumental in shaping our view of the activation process, whose free-energy profile is currently envisioned as composed of a few local minima separated by steep barriers. Here we use atomistic level modeling and well-tempered metadynamics to calculate the configurational free energy along a single transition from first principles. We show that this transition is intrinsically multidimensional and described by a rough free-energy landscape. Remarkably, a coarse-grained description of the system, based on the use of the gating charge as reaction coordinate, reveals a smooth profile with a single barrier, consistent with phenomenological models. Our results bridge the gap between microscopic and macroscopic descriptions of activation dynamics and show that choosing the gating charge as reaction coordinate masks the topological complexity of the network of microstates participating in the transition. Importantly, full characterization of the latter is a prerequisite to rationalize modulation of this process by lipids, toxins, drugs, and genetic mutations.

  6. Orientations and Proximities of the Extracellular Ends of Transmembrane Helices S0 and S4 in Open and Closed BK Potassium Channels

    PubMed Central

    Wu, Roland S.; Chudasama, Neelesh; Zakharov, Sergey I.; Karlin, Arthur; Marx, Steven O.

    2013-01-01

    The large-conductance potassium channel (BK) α subunit contains a transmembrane (TM) helix S0 preceding the canonical TM helices S1 through S6. S0 lies between S4 and the TM2 helix of the regulatory β1 subunit. Pairs of Cys were substituted in the first helical turns in the membrane of BK α S0 and S4 and in β1 TM2. One such pair, W22C in S0 and W203C in S4, was 95% crosslinked endogenously. Under voltage-clamp conditions in outside-out patches, this crosslink was reduced by DTT and reoxidized by a membrane-impermeant bis-quaternary ammonium derivative of diamide. The rate constants for this reoxidation were not significantly different in the open and closed states of the channel. Thus, these two residues are approximately equally close in the two states. In addition, 90% crosslinking of a second pair, R20C in S0 and W203C in S4, had no effect on the V50 for opening. Taken together, these findings indicate that separation between residues at the extracellular ends of S0 and S4 is not required for voltage-sensor activation. On the contrary, even though W22C and W203C were equally likely to form a disulfide in the activated and deactivated states, relative immobilization by crosslinking of these two residues favored the activated state. Furthermore, the efficiency of recrosslinking of W22C and W203C on the cell surface was greater in the presence of the β1 subunit than in its absence, consistent with β1 acting through S0 to stabilize its immobilization relative to α S4. PMID:23472181

  7. Room-temperature CO Thermoelectric Gas Sensor based on Au/Co3O4 Catalyst Tablet.

    PubMed

    Sun, L; Luan, W L; Wang, T C; Su, W X; Zhang, L X

    2017-02-17

    A carbon monoxide (CO) thermoelectric (TE) gas sensor was fabricated by affixing a Au/Co 3 O 4 catalyst tablet on a TE film layer. The Au/Co 3 O 4 catalyst tablet was prepared by a co-precipitation and tablet compression method and its possible catalytic mechanism was discussed by means of x-ray diffraction, field emission scanning electron microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, temperature-programmed reduction of hydrogen, Fourier transform infrared spectroscopy and Brunauer-Emmett-Teller analysis. The optimal catalyst, with a Au content of 10 wt%, was obtained at a calcination temperature between 200 and 300 °C. The small size of the Au nanoparticles, high specific surface, the existence of Co 3+ and water-derived species contributed to  high catalytic activity. Based on the optimal Au/Co 3 O 4 catalyst tablet, the CO TE gas sensor worked at room temperature and showed a response voltage signal (ΔV) of 23 mV, high selectivity among hydrogen and methane, high stability, and a fast response time of 106 s for 30 000 ppm CO/air. In addition, a CO concentration in the range of 5000-30 000 ppm could obviously be detected and exhibited a linear relationship with ΔV. The CO TE gas sensor provides a promising option for the detection of CO gas at room temperature.

  8. Mechanistic basis for type 2 long QT syndrome caused by KCNH2 mutations that disrupt conserved arginine residues in the voltage sensor.

    PubMed

    McBride, Christie M; Smith, Ashley M; Smith, Jennifer L; Reloj, Allison R; Velasco, Ellyn J; Powell, Jonathan; Elayi, Claude S; Bartos, Daniel C; Burgess, Don E; Delisle, Brian P

    2013-05-01

    KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (I Kr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing I Kr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (I Kv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients' genotypes) mostly corrected the changes in I Kv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing I Kr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease I Kr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient.

  9. The voltage-sensor quartet

    PubMed Central

    Bankston, J. R.; Kass, R. S.

    2009-01-01

    Decoding the workings of voltage-gated sodium channels is crucial because their mutation leads to severe disease and their activity is modulated by toxins and drugs. An innovative approach now allows such investigations. PMID:19005542

  10. Functional interactions at the interface between voltage-sensing and pore domains in the Shaker K(v) channel.

    PubMed

    Soler-Llavina, Gilberto J; Chang, Tsg-Hui; Swartz, Kenton J

    2006-11-22

    Voltage-activated potassium (K(v)) channels contain a central pore domain that is partially surrounded by four voltage-sensing domains. Recent X-ray structures suggest that the two domains lack extensive protein-protein contacts within presumed transmembrane regions, but whether this is the case for functional channels embedded in lipid membranes remains to be tested. We investigated domain interactions in the Shaker K(v) channel by systematically mutating the pore domain and assessing tolerance by examining channel maturation, S4 gating charge movement, and channel opening. When mapped onto the X-ray structure of the K(v)1.2 channel the large number of permissive mutations support the notion of relatively independent domains, consistent with crystallographic studies. Inspection of the maps also identifies portions of the interface where residues are sensitive to mutation, an external cluster where mutations hinder voltage sensor activation, and an internal cluster where domain interactions between S4 and S5 helices from adjacent subunits appear crucial for the concerted opening transition.

  11. Complementary Paired G4FETs as Voltage-Controlled NDR Device

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Chen, Suheng; Blalock, Ben; Britton, Chuck; Prothro, Ben; Vandersand, James; Schrimph, Ron; Cristoloveanu, Sorin; Akavardar, Kerem; Gentil, P.

    2009-01-01

    It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator

  12. Capacitively coupled RF voltage probe having optimized flux linkage

    DOEpatents

    Moore, James A.; Sparks, Dennis O.

    1999-02-02

    An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

  13. RF current sensor

    DOEpatents

    Moore, James A.; Sparks, Dennis O.

    1998-11-10

    An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

  14. NMR structural and dynamical investigation of the isolated voltage-sensing domain of the potassium channel KvAP: implications for voltage gating.

    PubMed

    Shenkarev, Zakhar O; Paramonov, Alexander S; Lyukmanova, Ekaterina N; Shingarova, Lyudmila N; Yakimov, Sergei A; Dubinnyi, Maxim A; Chupin, Vladimir V; Kirpichnikov, Mikhail P; Blommers, Marcel J J; Arseniev, Alexander S

    2010-04-28

    The structure and dynamics of the isolated voltage-sensing domain (VSD) of the archaeal potassium channel KvAP was studied by high-resolution NMR. The almost complete backbone resonance assignment and partial side-chain assignment of the (2)H,(13)C,(15)N-labeled VSD were obtained for the protein domain solubilized in DPC/LDAO (2:1) mixed micelles. Secondary and tertiary structures of the VSD were characterized using secondary chemical shifts and NOE contacts. These data indicate that the spatial structure of the VSD solubilized in micelles corresponds to the structure of the domain in an open state of the channel. NOE contacts and secondary chemical shifts of amide protons indicate the presence of tightly bound water molecule as well as hydrogen bond formation involving an interhelical salt bridge (Asp62-R133) that stabilizes the overall structure of the domain. The backbone dynamics of the VSD was studied using (15)N relaxation measurements. The loop regions S1-S2 and S2-S3 were found mobile, while the S3-S4 loop (voltage-sensor paddle) was found stable at the ps-ns time scale. The moieties of S1, S2, S3, and S4 helices sharing interhelical contacts (at the level of the Asp62-R133 salt bridge) were observed in conformational exchange on the micros-ms time scale. Similar exchange-induced broadening of characteristic resonances was observed for the VSD solubilized in the membrane of lipid-protein nanodiscs composed of DMPC, DMPG, and POPC/DOPG lipids. Apparently, the observed interhelical motions represent an inherent property of the VSD of the KvAP channel and can play an important role in the voltage gating.

  15. Piezoelectric MEMS switch to activate event-driven wireless sensor nodes

    NASA Astrophysics Data System (ADS)

    Nogami, H.; Kobayashi, T.; Okada, H.; Makimoto, N.; Maeda, R.; Itoh, T.

    2013-09-01

    We have developed piezoelectric microelectromechanical systems (MEMS) switches and applied them to ultra-low power wireless sensor nodes, to monitor the health condition of chickens. The piezoelectric switches have ‘S’-shaped piezoelectric cantilevers with a proof mass. Since the resonant frequency of the piezoelectric switches is around 24 Hz, we have utilized their superharmonic resonance to detect chicken movements as low as 5-15 Hz. When the vibration frequency is 4, 6 and 12 Hz, the piezoelectric switches vibrate at 0.5 m s-2 and generate 3-5 mV output voltages with superharmonic resonance. In order to detect such small piezoelectric output voltages, we employ comparator circuits that can be driven at low voltages, which can set the threshold voltage (Vth) from 1 to 31 mV with a 1 mV increment. When we set Vth at 4 mV, the output voltages of the piezoelectric MEMS switches vibrate below 15 Hz with amplitudes above 0.3 m s-2 and turn on the comparator circuits. Similarly, by setting Vth at 5 mV, the output voltages turn on the comparator circuits with vibrations above 0.4 m s-2. Furthermore, setting Vth at 10 mV causes vibrations above 0.5 m s-2 that turn on the comparator circuits. These results suggest that we can select small or fast chicken movements to utilize piezoelectric MEMS switches with comparator circuits.

  16. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    PubMed

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  17. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    PubMed Central

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-01-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V−1 sec−1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity. PMID:27157914

  18. Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

    NASA Astrophysics Data System (ADS)

    Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

    1993-06-01

    Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

  19. An Improved Targeted cAMP Sensor to Study the Regulation of Adenylyl Cyclase 8 by Ca2+ Entry through Voltage-Gated Channels

    PubMed Central

    Everett, Katy L.; Cooper, Dermot M. F.

    2013-01-01

    Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC) 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes. PMID:24086669

  20. Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.

    p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

  1. Proline Scan of the hERG Channel S6 Helix Reveals the Location of the Intracellular Pore Gate

    PubMed Central

    Thouta, Samrat; Sokolov, Stanislav; Abe, Yuki; Clark, Sheldon J.; Cheng, Yen M.; Claydon, Tom W.

    2014-01-01

    In Shaker-like channels, the activation gate is formed at the bundle crossing by the convergence of the inner S6 helices near a conserved proline-valine-proline motif, which introduces a kink that allows for electromechanical coupling with voltage sensor motions via the S4-S5 linker. Human ether-a-go-go-related gene (hERG) channels lack the proline-valine-proline motif and the location of the intracellular pore gate and how it is coupled to S4 movement is less clear. Here, we show that proline substitutions within the S6 of hERG perturbed pore gate closure, trapping channels in the open state. Performing a proline scan of the inner S6 helix, from Ile655 to Tyr667 revealed that gate perturbation occurred with proximal (I655P-Q664P), but not distal (R665P-Y667P) substitutions, suggesting that Gln664 marks the position of the intracellular gate in hERG channels. Using voltage-clamp fluorimetry and gating current analysis, we demonstrate that proline substitutions trap the activation gate open by disrupting the coupling between the voltage-sensing unit and the pore of the channel. We characterize voltage sensor movement in one such trapped-open mutant channel and demonstrate the kinetics of what we interpret to be intrinsic hERG voltage sensor movement. PMID:24606930

  2. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor

    PubMed Central

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K.; Shi, Yingtang; Wagner, Paul G.; Pivaroff-Ward, Kendra; Sassic, Jessica K.; Bayliss, Douglas A.

    2013-01-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K+ channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K+ currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K+ channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance–voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn2+. Low pH similarly reduces Mg2+ sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca2+. Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K+ currents observed in vivo. PMID:23712551

  3. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor.

    PubMed

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K; Shi, Yingtang; Wagner, Paul G; Pivaroff-Ward, Kendra; Sassic, Jessica K; Bayliss, Douglas A; Jegla, Timothy

    2013-06-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K(+) channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K(+) currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K(+) channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance-voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn(2+). Low pH similarly reduces Mg(2+) sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca(2+). Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K(+) currents observed in vivo.

  4. Symmetric voltage-controlled variable resistance

    NASA Technical Reports Server (NTRS)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  5. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    NASA Astrophysics Data System (ADS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-09-01

    Ce-doped CaGa2S4 and SrGa2S4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H2S and O2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce3+ activated CaGa2S4 and SrGa2S4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O2 gas stream.

  6. Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

    PubMed

    Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

    2014-03-01

    The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

  7. Structural Mechanism of Voltage-Dependent Gating in an Isolated Voltage-Sensing Domain

    PubMed Central

    Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos; Hulse, Raymond E.; Roux, Benoit; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

    2014-01-01

    SUMMARY The transduction of transmembrane electric fields into protein motion plays an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSD) carry out these functions through reorientations of S4 helix with discrete gating charges. Here, crystal structures of the VSD from Ci-VSP were determined in both, active (Up) and resting (Down) conformations. The S4 undergoes a ~5 Å displacement along its main axis accompanied by a ~60o rotation, consistent with the helix-screw gating mechanism. This movement is stabilized by a change in countercharge partners in helices S1 and S3, generating an estimated net charge transfer of ~1 eo. Gating charges move relative to a “hydrophobic gasket” that electrically divides intra and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent cellular activities. PMID:24487958

  8. Rain Drop Charge Sensor

    NASA Astrophysics Data System (ADS)

    S, Sreekanth T.

    begin{center} Large Large Rain Drop Charge Sensor Sreekanth T S*, Suby Symon*, G. Mohan Kumar (1) , S. Murali Das (2) *Atmospheric Sciences Division, Centre for Earth Science Studies, Thiruvananthapuram 695011 (1) D-330, Swathi Nagar, West Fort, Thiruvananthapuram 695023 (2) Kavyam, Manacaud, Thiruvananthapuram 695009 begin{center} ABSTRACT To study the inter-relations with precipitation electricity and precipitation microphysical parameters a rain drop charge sensor was designed and developed at CESS Electronics & Instrumentation Laboratory. Simultaneous measurement of electric charge and fall speed of rain drops could be done using this charge sensor. A cylindrical metal tube (sensor tube) of 30 cm length is placed inside another thick metal cover opened at top and bottom for electromagnetic shielding. Mouth of the sensor tube is exposed and bottom part is covered with metal net in the shielding cover. The instrument is designed in such a way that rain drops can pass only through unhindered inside the sensor tube. When electrically charged rain drops pass through the sensor tube, it is charged to the same magnitude of drop charge but with opposite polarity. The sensor tube is electrically connected the inverted input of a current to voltage converter operational amplifier using op-amp AD549. Since the sensor is electrically connected to the virtual ground of the op-amp, the charge flows to the ground and the generated current is converted to amplified voltage. This output voltage is recorded using a high frequency (1kHz) voltage recorder. From the recorded pulse, charge magnitude, polarity and fall speed of rain drop are calculated. From the fall speed drop diameter also can be calculated. The prototype is now under test running at CESS campus. As the magnitude of charge in rain drops is an indication of accumulated charge in clouds in lightning, this instrument has potential application in the field of risk and disaster management. By knowing the charge

  9. Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels.

    PubMed

    Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred; Flucher, Bernhard E

    2016-06-01

    Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3-S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3-S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3-S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3-S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3-S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms

  10. Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels

    PubMed Central

    Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred

    2016-01-01

    Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3–S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3–S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3–S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3–S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3–S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular

  11. [Conserved motifs in voltage sensing proteins].

    PubMed

    Wang, Chang-He; Xie, Zhen-Li; Lv, Jian-Wei; Yu, Zhi-Dan; Shao, Shu-Li

    2012-08-25

    This paper was aimed to study conserved motifs of voltage sensing proteins (VSPs) and establish a voltage sensing model. All VSPs were collected from the Uniprot database using a comprehensive keyword search followed by manual curation, and the results indicated that there are only two types of known VSPs, voltage gated ion channels and voltage dependent phosphatases. All the VSPs have a common domain of four helical transmembrane segments (TMS, S1-S4), which constitute the voltage sensing module of the VSPs. The S1 segment was shown to be responsible for membrane targeting and insertion of these proteins, while S2-S4 segments, which can sense membrane potential, for protein properties. Conserved motifs/residues and their functional significance of each TMS were identified using profile-to-profile sequence alignments. Conserved motifs in these four segments are strikingly similar for all VSPs, especially, the conserved motif [RK]-X(2)-R-X(2)-R-X(2)-[RK] was presented in all the S4 segments, with positively charged arginine (R) alternating with two hydrophobic or uncharged residues. Movement of these arginines across the membrane electric field is the core mechanism by which the VSPs detect changes in membrane potential. The negatively charged aspartate (D) in the S3 segment is universally conserved in all the VSPs, suggesting that the aspartate residue may be involved in voltage sensing properties of VSPs as well as the electrostatic interactions with the positively charged residues in the S4 segment, which may enhance the thermodynamic stability of the S4 segments in plasma membrane.

  12. High efficiency Cu2ZnSn(S,Se)4 solar cells by applying a double In2S3/CdS emitter.

    PubMed

    Kim, Jeehwan; Hiroi, Homare; Todorov, Teodor K; Gunawan, Oki; Kuwahara, Masaru; Gokmen, Tayfun; Nair, Dhruv; Hopstaken, Marinus; Shin, Byungha; Lee, Yun Seog; Wang, Wei; Sugimoto, Hiroki; Mitzi, David B

    2014-11-26

    High-efficiency Cu2ZnSn(S,Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S,Se)4 solar cells, resulting in a substantial enhancement in open-circuit voltage. The 12.4% device is obtained with a record open-circuit voltage deficit of 593 mV. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

    PubMed Central

    Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

    2014-01-01

    Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

  14. A novel label-free photoelectrochemical sensor based on N,S-GQDs and CdS co-sensitized hierarchical Zn2SnO4 cube for detection of cardiac troponin I.

    PubMed

    Fan, Dawei; Bao, Chunzhu; Khan, Malik Saddam; Wang, Chuanlei; Zhang, Yong; Liu, Qinze; Zhang, Xian; Wei, Qin

    2018-05-30

    A novel label-free photoelectrochemical (PEC) sensor based on graphene quantum dots doped with nitrogen and sulfur (N,S-GQDs) and CdS co-sensitized hierarchical Zn 2 SnO 4 cube was fabricated to detect cardiac troponin I (cTnI). The unique hierarchical Zn 2 SnO 4 cube was synthesized successfully by the solvothermal method, which has a large specific surface to load functional materials. N,S-GQDs nanoparticles were assembled to the surface of cubic Zn 2 SnO 4 coated ITO electrode, which efficiently accelerated the electronic transition and improved photo-to-current conversion efficiency. Then, CdS nanoparticles further were modified by in-situ growth method to form Zn 2 SnO 4 /N,S-GQDs/CdS composite with prominent photocurrent, which was 30 times that of the Zn 2 SnO 4 cube alone. In this work, the specific immune recognition between cTnI antigens and cTnI antibodies (anti-cTnI) reduced the intensity of the photoelectric signal. And the intensity decreased linearly with the logarithm of cTnI concentration range from 0.001 ng/mL to 50 ng/mL with a detection limit of 0.3 pg/mL. With high sensitivity, excellent selectivity, good stability and reproducibility, the fabricated PEC sensor showed promising applications in the sensor, clinical diagnosis of myocardial infarction and PEC analysis. Copyright © 2018 Elsevier B.V. All rights reserved.

  15. Coupling between the voltage-sensing and phosphatase domains of Ci-VSP.

    PubMed

    Villalba-Galea, Carlos A; Miceli, Francesco; Taglialatela, Maurizio; Bezanilla, Francisco

    2009-07-01

    The Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) shares high homology with the phosphatidylinositol phosphatase enzyme known as PTEN (phosphatase and tensin homologue deleted on chromosome 10). We have taken advantage of the similarity between these proteins to inquire about the coupling between the voltage sensing and the phosphatase domains in Ci-VSP. Recently, it was shown that four basic residues (R11, K13, R14, and R15) in PTEN are critical for its binding onto the membrane, required for its catalytic activity. Ci-VSP has three of the basic residues of PTEN. Here, we show that when R253 and R254 (which are the homologues of R14 and R15 in PTEN) are mutated to alanines in Ci-VSP, phosphatase activity is disrupted, as revealed by a lack of effect on the ionic currents of KCNQ2/3, where current decrease is a measure of phosphatase activity. The enzymatic activity was not rescued by the introduction of lysines, indicating that the binding is an arginine-specific interaction between the phosphatase binding domain and the membrane, presumably through the phosphate groups of the phospholipids. We also found that the kinetics and steady-state voltage dependence of the S4 segment movement are affected when the arginines are not present, indicating that the interaction of R253 and R254 with the membrane, required for the catalytic action of the phosphatase, restricts the movement of the voltage sensor.

  16. A Low Power 2.4 GHz CMOS Mixer Using Forward Body Bias Technique for Wireless Sensor Network

    NASA Astrophysics Data System (ADS)

    Yin, C. J.; Murad, S. A. Z.; Harun, A.; Ramli, M. M.; Zulkifli, T. Z. A.; Karim, J.

    2018-03-01

    Wireless sensor network (WSN) is a highly-demanded application since the evolution of wireless generation which is often used in recent communication technology. A radio frequency (RF) transceiver in WSN should have a low power consumption to support long operating times of mobile devices. A down-conversion mixer is responsible for frequency translation in a receiver. By operating a down-conversion mixer at a low supply voltage, the power consumed by WSN receiver can be greatly reduced. This paper presents a development of low power CMOS mixer using forward body bias technique for wireless sensor network. The proposed mixer is implemented using CMOS 0.13 μm Silterra technology. The forward body bias technique is adopted to obtain low power consumption. The simulation results indicate that a low power consumption of 0.91 mW is achieved at 1.6 V supply voltage. Moreover, the conversion gain (CG) of 21.83 dB, the noise figure (NF) of 16.51 dB and the input-referred third-order intercept point (IIP3) of 8.0 dB at 2.4 GHz are obtained. The proposed mixer is suitable for wireless sensor network.

  17. Coupling between the Voltage-sensing and Pore Domains in a Voltage-gated Potassium Channel

    PubMed Central

    Schow, Eric V.; Freites, J. Alfredo; Nizkorodov, Alex; White, Stephen H.; Tobias, Douglas J.

    2012-01-01

    Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence. PMID:22425907

  18. Coupling between the voltage-sensing and pore domains in a voltage-gated potassium channel.

    PubMed

    Schow, Eric V; Freites, J Alfredo; Nizkorodov, Alex; White, Stephen H; Tobias, Douglas J

    2012-07-01

    Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence.

  19. Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

    NASA Astrophysics Data System (ADS)

    Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

    2003-04-01

    This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

  20. Electrolyte for high voltage Li/LiMn 1.9Co 0.1O 4 cells

    NASA Astrophysics Data System (ADS)

    Hayashi, Katsuya; Nemoto, Yasue; Tobishima, Shin-ichi; Yamaki, Jun-ichi

    An electrolyte for high voltage lithium metal anode cells must simultaneously satisfy at least the following requirements; (i) high cycling efficiency on the lithium metal anode; (ii) higher oxidation potential than the charging voltage, and (iii) high specific conductivity. We have examined various electrolytes for lithium metal anode cells using a high voltage cathode, LiMn 1.9Co 0.1O 4. Of the electrolytes resistant to high voltage that we used, a system containing 60 to 90 vol.% of dimethyl carbonate (DMC) mixed with ethylene carbonate (EC) and 1.0 M lithium hexafluorophosphate (LiPF 6) provided the best cycling efficiency on a lithium metal anode, as well as a high specific conductivity around 10 mS cm -1 at 20 °C.

  1. Effect of Embedded Pd Microstructures on the Flat-Band-Voltage Operation of Room Temperature ZnO-Based Liquid Petroleum Gas Sensors

    PubMed Central

    Ali, Ghusoon M.; Thompson, Cody V.; Jasim, Ali K.; Abdulbaqi, Isam M.; Moore, James C.

    2013-01-01

    Three methods were used to fabricate ZnO-based room temperature liquid petroleum gas (LPG) sensors having interdigitated metal-semiconductor-metal (MSM) structures. Specifically, devices with Pd Schottky contacts were fabricated with: (1) un-doped ZnO active layers; (2) Pd-doped ZnO active layers; and (3) un-doped ZnO layers on top of Pd microstructure arrays. All ZnO films were grown on p-type Si(111) substrates by the sol-gel method. For devices incorporating a microstructure array, Pd islands were first grown on the substrate by thermal evaporation using a 100 μm mesh shadow mask. We have estimated the sensitivity of the sensors for applied voltage from –5 to 5 V in air ambient, as well as with exposure to LPG in concentrations from 500 to 3,500 ppm at room temperature (300 K). The current-voltage characteristics were studied and parameters such as leakage current, barrier height, reach-through voltage, and flat-band voltage were extracted. We include contributions due to the barrier height dependence on the electric field and tunneling through the barrier for the studied MSM devices. The Pd-enhanced devices demonstrated a maximum gas response at flat-band voltages. The study also revealed that active layers consisting of Pd microstructure embedded ZnO films resulted in devices exhibiting greater gas-response as compared to those using Pd-doped ZnO thin films or un-doped active layers.

  2. Genotype–phenotype correlations in neonatal epilepsies caused by mutations in the voltage sensor of Kv7.2 potassium channel subunits

    PubMed Central

    Miceli, Francesco; Soldovieri, Maria Virginia; Ambrosino, Paolo; Barrese, Vincenzo; Migliore, Michele; Cilio, Maria Roberta; Taglialatela, Maurizio

    2013-01-01

    Mutations in the KV7.2 gene encoding for voltage-dependent K+ channel subunits cause neonatal epilepsies with wide phenotypic heterogeneity. Two mutations affecting the same positively charged residue in the S4 domain of KV7.2 have been found in children affected with benign familial neonatal seizures (R213W mutation) or with neonatal epileptic encephalopathy with severe pharmacoresistant seizures and neurocognitive delay, suppression-burst pattern at EEG, and distinct neuroradiological features (R213Q mutation). To examine the molecular basis for this strikingly different phenotype, we studied the functional characteristics of mutant channels by using electrophysiological techniques, computational modeling, and homology modeling. Functional studies revealed that, in homomeric or heteromeric configuration with KV7.2 and/or KV7.3 subunits, both mutations markedly destabilized the open state, causing a dramatic decrease in channel voltage sensitivity. These functional changes were (i) more pronounced for channels incorporating R213Q- than R213W-carrying KV7.2 subunits; (ii) proportional to the number of mutant subunits incorporated; and (iii) fully restored by the neuronal Kv7 activator retigabine. Homology modeling confirmed a critical role for the R213 residue in stabilizing the activated voltage sensor configuration. Modeling experiments in CA1 hippocampal pyramidal cells revealed that both mutations increased cell firing frequency, with the R213Q mutation prompting more dramatic functional changes compared with the R213W mutation. These results suggest that the clinical disease severity may be related to the extent of the mutation-induced functional K+ channel impairment, and set the preclinical basis for the potential use of Kv7 openers as a targeted anticonvulsant therapy to improve developmental outcome in neonates with KV7.2 encephalopathy. PMID:23440208

  3. The Molecular Basis of Polyunsaturated Fatty Acid Interactions with the Shaker Voltage-Gated Potassium Channel

    PubMed Central

    Yazdi, Samira; Stein, Matthias; Elinder, Fredrik; Andersson, Magnus; Lindahl, Erik

    2016-01-01

    Voltage-gated potassium (KV) channels are membrane proteins that respond to changes in membrane potential by enabling K+ ion flux across the membrane. Polyunsaturated fatty acids (PUFAs) induce channel opening by modulating the voltage-sensitivity, which can provide effective treatment against refractory epilepsy by means of a ketogenic diet. While PUFAs have been reported to influence the gating mechanism by electrostatic interactions to the voltage-sensor domain (VSD), the exact PUFA-protein interactions are still elusive. In this study, we report on the interactions between the Shaker KV channel in open and closed states and a PUFA-enriched lipid bilayer using microsecond molecular dynamics simulations. We determined a putative PUFA binding site in the open state of the channel located at the protein-lipid interface in the vicinity of the extracellular halves of the S3 and S4 helices of the VSD. In particular, the lipophilic PUFA tail covered a wide range of non-specific hydrophobic interactions in the hydrophobic central core of the protein-lipid interface, while the carboxylic head group displayed more specific interactions to polar/charged residues at the extracellular regions of the S3 and S4 helices, encompassing the S3-S4 linker. Moreover, by studying the interactions between saturated fatty acids (SFA) and the Shaker KV channel, our study confirmed an increased conformational flexibility in the polyunsaturated carbon tails compared to saturated carbon chains, which may explain the specificity of PUFA action on channel proteins. PMID:26751683

  4. Deconvolution of Voltage Sensor Time Series and Electro-diffusion Modeling Reveal the Role of Spine Geometry in Controlling Synaptic Strength.

    PubMed

    Cartailler, Jerome; Kwon, Taekyung; Yuste, Rafael; Holcman, David

    2018-03-07

    Most synaptic excitatory connections are made on dendritic spines. But how the voltage in spines is modulated by its geometry remains unclear. To investigate the electrical properties of spines, we combine voltage imaging data with electro-diffusion modeling. We first present a temporal deconvolution procedure for the genetically encoded voltage sensor expressed in hippocampal cultured neurons and then use electro-diffusion theory to compute the electric field and the current-voltage conversion. We extract a range for the neck resistances of 〈R〉=100±35MΩ. When a significant current is injected in a spine, the neck resistance can be inversely proportional to its radius, but not to the radius square, as predicted by Ohm's law. We conclude that the postsynaptic voltage cannot only be modulated by changing the number of receptors, but also by the spine geometry. Thus, spine morphology could be a key component in determining synaptic transduction and plasticity. Copyright © 2018 Elsevier Inc. All rights reserved.

  5. Design of a Humidity Sensor Tag for Passive Wireless Applications.

    PubMed

    Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

    2015-10-07

    This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader.

  6. On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Forati, Ebrahim, E-mail: forati@ieee.org; Piltan, Shiva; Sievenpiper, Dan, E-mail: dsievenpiper@ucsd.edu

    Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the drivingmore » circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)« less

  7. Structural characterization of the voltage sensor domain and voltage-gated K+- channel proteins vectorially-oriented within a single bilayer membrane at the solid/vapor and solid/liquid interfaces via neutron interferometry

    PubMed Central

    Gupta, S.; Dura, J.A.; Freites, J.A.; Tobias, D.J.; Blasie, J. K.

    2012-01-01

    The voltage-sensor domain (VSD) is a modular 4-helix bundle component that confers voltage sensitivity to voltage-gated cation channels in biological membranes. Despite extensive biophysical studies and the recent availability of x-ray crystal structures for a few voltage-gated potassium (Kv-) channels and a voltage-gate sodium (Nav-) channel, a complete understanding of the cooperative mechanism of electromechanical coupling, interconverting the closed-to-open states (i.e. non-conducting to cation conducting) remains undetermined. Moreover, the function of these domains is highly dependent on the physical-chemical properties of the surrounding lipid membrane environment. The basis for this work was provided by a recent structural study of the VSD from a prokaryotic Kv-channel vectorially-oriented within a single phospholipid (POPC; 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphocholine) membrane investigated by x-ray interferometry at the solid/moist He (or solid/vapor) and solid/liquid interfaces thus achieving partial to full hydration, respectively (Gupta et. al. Phys. Rev E. 2011, 84). Here, we utilize neutron interferometry to characterize this system in substantially greater structural detail at the sub-molecular level, due to its inherent advantages arising from solvent contrast variation coupled with the deuteration of selected sub-molecular membrane components, especially important for the membrane at the solid/liquid interface. We demonstrate the unique vectorial orientation of the VSD and the retention of its molecular conformation manifest in the asymmetric profile structure of the protein within the profile structure of this single bilayer membrane system. We definitively characterize the asymmetric phospholipid bilayer solvating the lateral surfaces of the VSD protein within the membrane. The profile structures of both the VSD protein and phospholipid bilayer depend upon the hydration state of the membrane. We also determine the distribution of water and

  8. NaEuF4/Au@Ag2S nanoparticles-based fluorescence resonant transfer DNA sensor for ultrasensitive detection of DNA energy.

    PubMed

    Liu, Yuhong; Zhao, Linlin; Zhang, Jin; Zhang, Jinzha; Zhao, Wenbo; Mao, Chun

    2016-12-01

    The work investigates a new fluorescence resonance energy transfer (FRET) system using NaEuF 4 nanoparticles (NPs) and Au@Ag 2 S NPs as the energy donor-acceptor pair for the first time. The NaEuF 4 /Au@Ag 2 S NPs-based FRET DNA sensor was constructed with NaEuF 4 NPs as the fluorescence (FL) donor and Au@Ag 2 S core-shell NPs as FL acceptor. In order to find the matching energy acceptor, the amount of AgNO 3 and Na 2 S were controlled in the synthesis process to overlap the absorption spectrum of energy acceptor with the emission spectrum of energy donors. The sensitivity of FRET-based DNA sensor can be enhanced and the self-absorption of ligand as well as the background of signals can be decreased because of Eu 3+ which owns large Stokes shifts and narrow emission bands due to f-f electronic transitions of 4f shell. We obtained the efficient FRET system by studying suitable distance between the donor and acceptor. Then the FRET-based DNA sensor was used for the design of specific and sensitive detection of target DNA and the quenching efficiency (ΔFL/F 0 , ΔFL=F-F 0 ) of FL was logarithmically related to the concentration of the target DNA, ranging from 100aM to 100pM. We can realize an ultrasensitive detection of target DNA with a detection limit of 32 aM. This proposed method was feasible to analyse target DNA in real samples with satisfactory results. Copyright © 2016 Elsevier B.V. All rights reserved.

  9. Cable Crosstalk Suppression with Two-Wire Voltage Feedback Method for Resistive Sensor Array

    PubMed Central

    Wu, Jianfeng; He, Shangshang; Li, Jianqing; Song, Aiguo

    2016-01-01

    Using a long, flexible test cable connected with a one-wire voltage feedback circuit, a resistive tactile sensor in a shared row-column fashion exhibited flexibility in robotic operations but suffered from crosstalk caused by the connected cable due to its wire resistances and its contacted resistances. Firstly, we designed a new non-scanned driving-electrode (VF-NSDE) circuit using two wires for every row line and every column line to reduce the crosstalk caused by the connected cables in the circuit. Then, an equivalent resistance expression of the element being tested (EBT) for the two-wire VF-NSDE circuit was analytically derived. Following this, the one-wire VF-NSDE circuit and the two-wire VF-NSDE circuit were evaluated by simulation experiments. Finally, positive features of the proposed method were verified with the experiments of a two-wire VF-NSDE prototype circuit. The experiment results show that the two-wire VF-NSDE circuit can greatly reduce the crosstalk error caused by the cables in the 2-D networked resistive sensor array. PMID:26907279

  10. Skylab program earth resources experiment package sensor performance evaluation, volume 1, (S190A)

    NASA Technical Reports Server (NTRS)

    Kenney, G. P.

    1975-01-01

    The results of S190A sensor performance evaluation are summarized based on data presented by all contributors to the sensor performance evaluation interim reports. Techniques used in sensor performance evaluation are discussed. Topics discussed include: performance degradation identified during the Skylab missions, S190A and EREP system anomalies that affected S190A performance, and the performance achieved, in terms of pertinent S190A parameters. Additional analyses include final performance analyses completed after submittal of the SL4 interim sensor performance evaluation reports, including completion of detailed analyses of basic performance parameters initiated during the interim report periods and consolidation analyses to reduce independent mission data (SL2, SL3, and SL4) to determine overall performance realized during all three Skylab missions.

  11. Computational investigation of single-wall carbon nanotube functionalized with palladium nanoclusters as hydrogen sulfide gas sensor

    NASA Astrophysics Data System (ADS)

    Bagherzadeh-Nobari, S.; Hosseini-Istadeh, K.; Kalantarinejad, R.; Elahi, S. M.; Shokri, A. A.

    2018-03-01

    Our aim is to study theoretically, the sensitivity of a hydrogen sulfide gas sensor, with regard to electrical conductance behavior. Our senor consists of a semiconductor single-wall carbon nanotube (SWCNT), functionalized with palladium nanoclusters, sandwiched between two gold electrodes. Initially, we have computed the optimized structure of the sensor, via molecular dynamic simulations. Then by using non-equilibrium Green's function method, combined with density functional theory, the electronic and transport properties of the sensor were calculated, and compared before and after adsorption of H2S gas, at different bias voltages. The highest sensitivity is achieved at 40 mV bias voltage. In this bias voltage, H2S gas adsorption causes a significant decrease of current, because as a result of charge transfer from the CNT and palladium nanoclusters, to H2S gas, majority carriers (electrons) decrease. The results show that CNT decorated with palladium nanoclusters can be a promising candidate in gas-sensorics.

  12. Interactions between charged residues in the transmembrane segments of the voltage-sensing domain in the hERG channel.

    PubMed

    Zhang, M; Liu, J; Jiang, M; Wu, D-M; Sonawane, K; Guy, H R; Tseng, G-N

    2005-10-01

    Studies on voltage-gated K channels such as Shaker have shown that positive charges in the voltage-sensor (S4) can form salt bridges with negative charges in the surrounding transmembrane segments in a state-dependent manner, and different charge pairings can stabilize the channels in closed or open states. The goal of this study is to identify such charge interactions in the hERG channel. This knowledge can provide constraints on the spatial relationship among transmembrane segments in the channel's voltage-sensing domain, which are necessary for modeling its structure. We first study the effects of reversing S4's positive charges on channel activation. Reversing positive charges at the outer (K525D) and inner (K538D) ends of S4 markedly accelerates hERG activation, whereas reversing the 4 positive charges in between either has no effect or slows activation. We then use the 'mutant cycle analysis' to test whether D456 (outer end of S2) and D411 (inner end of S1) can pair with K525 and K538, respectively. Other positive charges predicted to be able, or unable, to interact with D456 or D411 are also included in the analysis. The results are consistent with predictions based on the distribution of these charged residues, and confirm that there is functional coupling between D456 and K525 and between D411 and K538.

  13. A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

    NASA Astrophysics Data System (ADS)

    Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

    2018-02-01

    We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

  14. Electrophysiological Features of Single Store-Operated Calcium Channels in HEK S4 Cell Line with Stable STIM1 Protein Knockdown.

    PubMed

    Shalygin, A V; Vigont, V A; Glushankova, L N; Zimina, O A; Kolesnikov, D O; Skopin, A Yu; Kaznacheeva, E V

    2017-07-01

    An important role in intracellular calcium signaling is played by store-operated channels activated by STIM proteins, calcium sensors of the endoplasmic reticulum. In stable STIM1 knockdown HEK S4 cells, single channels activated by depletion of intracellular calcium stores were detected by cell-attached patch-clamp technique and their electrophysiological parameters were described. Comparison of the properties of single channels in HEK293 and HEK S4 cells revealed no significant differences in their current-voltage curves, while regulation of store-operated calcium channels in these cell lines depended on the level of STIM1 expression. We can conclude that electrophysiological peculiarities of store-regulated calcium entry observed in different cells can be explained by differences in STIM1 expression.

  15. Transfer of Kv3.1 voltage sensor features to the isolated Ci-VSP voltage-sensing domain.

    PubMed

    Mishina, Yukiko; Mutoh, Hiroki; Knöpfel, Thomas

    2012-08-22

    Membrane proteins that respond to changes in transmembrane voltage are critical in regulating the function of living cells. The voltage-sensing domains (VSDs) of voltage-gated ion channels are extensively studied to elucidate voltage-sensing mechanisms, and yet many aspects of their structure-function relationship remain elusive. Here, we transplanted homologous amino acid motifs from the tetrameric voltage-activated potassium channel Kv3.1 to the monomeric VSD of Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) to explore which portions of Kv3.1 subunits depend on the tetrameric structure of Kv channels and which properties of Kv3.1 can be transferred to the monomeric Ci-VSP scaffold. By attaching fluorescent proteins to these chimeric VSDs, we obtained an optical readout to establish membrane trafficking and kinetics of voltage-dependent structural rearrangements. We found that motifs extending from 10 to roughly 100 amino acids can be readily transplanted from Kv3.1 into Ci-VSP to form engineered VSDs that efficiently incorporate into the plasma membrane and sense voltage. Some of the functional features of these engineered VSDs are reminiscent of Kv3.1 channels, indicating that these properties do not require interactions between Kv subunits or between the voltage sensing and the pore domains of Kv channels. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  16. Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

    PubMed

    Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

    2010-01-01

    Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

  17. Design of a Humidity Sensor Tag for Passive Wireless Applications

    PubMed Central

    Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

    2015-01-01

    This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader. PMID:26457707

  18. Fiber-coupled LED gas sensor and its application to online monitoring of ecoefficient dielectric insulation gases in high-voltage circuit breakers.

    PubMed

    Kramer, Axel; Over, Daniel; Stoller, Patrick; Paul, Thomas A

    2017-05-20

    Novel dielectric insulation gases used as alternatives to sulfur hexafluoride in gas-insulated switchgear (GIS) include several mixtures containing fluorinated organic compounds. We developed a fiber-optic analyzer enabling concentration measurement of fluoroketones used in medium- and high-voltage switchgear applications by ABB, with concurrent compensation of disturbing effects caused by dust and dirt. The sensor enables measurements in GIS and even in operating high-voltage circuit breakers. The online availability of concentration readings of fluoroketones is important for development tests, but can also be applied for monitoring or diagnostics of field installations.

  19. Bioelectrochemical methane (CH4) production in anaerobic digestion at different supplemental voltages.

    PubMed

    Choi, Kwang-Soon; Kondaveeti, Sanath; Min, Booki

    2017-12-01

    Microbial electrolysis cells (MECs) at various cell voltages (0.5, 0.7 1.0 and 1.5V) were operated in anaerobic fermentation. During the start-up period, the cathode potential decreased from -0.63 to -1.01V, and CH 4 generation increased from 168 to 199ml. At an applied voltage of 1.0V, the highest methane yields of 408.3ml CH 4 /g COD glucose was obtained, which was 30.3% higher than in the control tests (313.4ml CH 4 /g COD glucose). The average current of 5.1mA was generated at 1.0V at which the maximum methane yield was obtained. The other average currents were 1.42, 3.02, 0.53mA at 0.5, 0.7, and 1.5V, respectively. Cyclic voltammetry and EIS analysis revealed that enhanced reduction currents were present at all cell voltages with biocatalyzed cathode electrodes (no reduction without biofilm), and the highest value was obtained with 1V external voltage. Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. Co3O4 nanoboxes with abundant porestructure boosted ultrasensitive toluene gas sensors

    NASA Astrophysics Data System (ADS)

    Tan, Jianfeng; Dun, Menghan; Li, Long; Huang, Xintang

    2018-04-01

    Hollow and hollowed-out Co3O4 nanoboxes (denoted as Co3O4-HHNBs) that assembled by porous ultrathin nanosheets (∼2 nm) have been synthesized through a morphology-conserved transformations of metal-organic framework (MOF) based precursors strategy and then applied to gas sensors. The switching process used a facile two-step approach, including the formation of box-shaped Co(OH)2 followed by thermal conversion to Co3O4-HHNBs. The sensors based on Co3O4-HHNBs exhibit high response with the value of 56.6 to 100 ppm of toluene at 200 °C and 15.9 for ethanol at 220 °C, respectively. The response/recovery time to 50 ppm toluene and ethanol are as short as 10 s/9 s and 0.4 s/0.5 s at 200 °C, respectively. The formation mechanism of Co3O4-HHNBs and the gas sensing mechanism are discussed in detail. Benefiting from the unique structural features, it exhibit high response and ultra-fast response/recovery speed. This synthesis concept of Co3O4-HHNBs may open new avenues to fabricate high performance gas sensor by carefully controlling the morphology of sensitive nanomaterials.

  1. Evaluation of the Hydrolab HL4 water-quality sonde and sensors

    USGS Publications Warehouse

    Snazelle, Teri T.

    2017-12-18

    The U.S. Geological Survey (USGS) Hydrologic Instrumentation Facility evaluated three Hydrolab HL4 multiparameter water-quality sondes by OTT Hydromet. The sondes were equipped with temperature, conductivity, pH, dissolved oxygen (DO), and turbidity sensors. The sensors were evaluated for compliance with the USGS National Field Manual for the Collection of Water-Quality Data (NFM) criteria for continuous water-quality monitors and to verify the validity of the manufacturer’s technical specifications. The conductivity sensors were evaluated for the accuracy of the specific conductance (SC) values (conductance at 25 degrees Celsius [oC]), that were calculated by using the vendor default method, Hydrolab Fresh. The HL4s communication protocols and operating temperature range along with accuracy of the water-quality sensors were tested in a controlled laboratory setting May 1–19, 2016. To evaluate the sonde’s performance in a surface-water field application, an HL4 equipped with temperature, conductivity, pH, DO, and turbidity sensors was deployed June 20–July 22, 2016, at USGS water-monitoring site 02492620, Pearl River at National Space Technology Laboratories (NSTL) Station, Mississippi, located near Bay Saint Louis, Mississippi, and compared to the adjacent well-maintained EXO2 site sonde.The three HL4 sondes met the USGS temperature testing criteria and the manufacturer’s technical specifications for temperature based upon the median room temperature difference between the measured and standard temperatures, but two of the three sondes exceeded the allowable difference criteria at the temperature extremes of approximately 5 and 40 ºC. Two sondes met the USGS criteria for SC. One of the sondes failed the criteria for SC when evaluated in a 100,000-microsiemens-per-centimeter (μS/cm) standard at room temperature, and also failed in a 10,000-μS/cm standard at 5, 15, and 40 ºC. All three sondes met the USGS criteria for pH and DO at room temperature

  2. Sensors, Volume 4, Thermal Sensors

    NASA Astrophysics Data System (ADS)

    Scholz, Jorg; Ricolfi, Teresio

    1996-12-01

    'Sensors' is the first self-contained series to deal with the whole area of sensors. It describes general aspects, technical and physical fundamentals, construction, function, applications and developments of the various types of sensors. This volume describes the construction and applicational aspects of thermal sensors while presenting a rigorous treatment of the underlying physical principles. It provides a unique overview of the various categories of sensors as well as of specific groups, e.g. temperature sensors (resistance thermometers, thermocouples, and radiation thermometers), noise and acoustic thermometers, heat-flow and mass-flow sensors. Specific facettes of applications are presented by specialists from different fields including process control, automotive technology and cryogenics. This volume is an indispensable reference work and text book for both specialists and newcomers, researchers and developers.

  3. Actions and Mechanisms of Polyunsaturated Fatty Acids on Voltage-Gated Ion Channels.

    PubMed

    Elinder, Fredrik; Liin, Sara I

    2017-01-01

    Polyunsaturated fatty acids (PUFAs) act on most ion channels, thereby having significant physiological and pharmacological effects. In this review we summarize data from numerous PUFAs on voltage-gated ion channels containing one or several voltage-sensor domains, such as voltage-gated sodium (Na V ), potassium (K V ), calcium (Ca V ), and proton (H V ) channels, as well as calcium-activated potassium (K Ca ), and transient receptor potential (TRP) channels. Some effects of fatty acids appear to be channel specific, whereas others seem to be more general. Common features for the fatty acids to act on the ion channels are at least two double bonds in cis geometry and a charged carboxyl group. In total we identify and label five different sites for the PUFAs. PUFA site 1 : The intracellular cavity. Binding of PUFA reduces the current, sometimes as a time-dependent block, inducing an apparent inactivation. PUFA site 2 : The extracellular entrance to the pore. Binding leads to a block of the channel. PUFA site 3 : The intracellular gate. Binding to this site can bend the gate open and increase the current. PUFA site 4 : The interface between the extracellular leaflet of the lipid bilayer and the voltage-sensor domain. Binding to this site leads to an opening of the channel via an electrostatic attraction between the negatively charged PUFA and the positively charged voltage sensor. PUFA site 5 : The interface between the extracellular leaflet of the lipid bilayer and the pore domain. Binding to this site affects slow inactivation. This mapping of functional PUFA sites can form the basis for physiological and pharmacological modifications of voltage-gated ion channels.

  4. Actions and Mechanisms of Polyunsaturated Fatty Acids on Voltage-Gated Ion Channels

    PubMed Central

    Elinder, Fredrik; Liin, Sara I.

    2017-01-01

    Polyunsaturated fatty acids (PUFAs) act on most ion channels, thereby having significant physiological and pharmacological effects. In this review we summarize data from numerous PUFAs on voltage-gated ion channels containing one or several voltage-sensor domains, such as voltage-gated sodium (NaV), potassium (KV), calcium (CaV), and proton (HV) channels, as well as calcium-activated potassium (KCa), and transient receptor potential (TRP) channels. Some effects of fatty acids appear to be channel specific, whereas others seem to be more general. Common features for the fatty acids to act on the ion channels are at least two double bonds in cis geometry and a charged carboxyl group. In total we identify and label five different sites for the PUFAs. PUFA site 1: The intracellular cavity. Binding of PUFA reduces the current, sometimes as a time-dependent block, inducing an apparent inactivation. PUFA site 2: The extracellular entrance to the pore. Binding leads to a block of the channel. PUFA site 3: The intracellular gate. Binding to this site can bend the gate open and increase the current. PUFA site 4: The interface between the extracellular leaflet of the lipid bilayer and the voltage-sensor domain. Binding to this site leads to an opening of the channel via an electrostatic attraction between the negatively charged PUFA and the positively charged voltage sensor. PUFA site 5: The interface between the extracellular leaflet of the lipid bilayer and the pore domain. Binding to this site affects slow inactivation. This mapping of functional PUFA sites can form the basis for physiological and pharmacological modifications of voltage-gated ion channels. PMID:28220076

  5. Use of Multi-Functional Flexible Micro-Sensors for in situ Measurement of Temperature, Voltage and Fuel Flow in a Proton Exchange Membrane Fuel Cell

    PubMed Central

    Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

    2010-01-01

    Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased. PMID:22163545

  6. Temporal Dynamics of Microbial Rhodopsin Fluorescence Reports Absolute Membrane Voltage

    PubMed Central

    Hou, Jennifer H.; Venkatachalam, Veena; Cohen, Adam E.

    2014-01-01

    Plasma membrane voltage is a fundamentally important property of a living cell; its value is tightly coupled to membrane transport, the dynamics of transmembrane proteins, and to intercellular communication. Accurate measurement of the membrane voltage could elucidate subtle changes in cellular physiology, but existing genetically encoded fluorescent voltage reporters are better at reporting relative changes than absolute numbers. We developed an Archaerhodopsin-based fluorescent voltage sensor whose time-domain response to a stepwise change in illumination encodes the absolute membrane voltage. We validated this sensor in human embryonic kidney cells. Measurements were robust to variation in imaging parameters and in gene expression levels, and reported voltage with an absolute accuracy of 10 mV. With further improvements in membrane trafficking and signal amplitude, time-domain encoding of absolute voltage could be applied to investigate many important and previously intractable bioelectric phenomena. PMID:24507604

  7. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    NASA Astrophysics Data System (ADS)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  8. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    NASA Astrophysics Data System (ADS)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  9. Optimization of Pockels electric field in transverse modulated optical voltage sensor

    NASA Astrophysics Data System (ADS)

    Huang, Yifan; Xu, Qifeng; Chen, Kun-Long; Zhou, Jie

    2018-05-01

    This paper investigates the possibilities of optimizing the Pockels electric field in a transverse modulated optical voltage sensor with a spherical electrode structure. The simulations show that due to the edge effect and the electric field concentrations and distortions, the electric field distributions in the crystal are non-uniform. In this case, a tiny variation in the light path leads to an integral error of more than 0.5%. Moreover, a 2D model cannot effectively represent the edge effect, so a 3D model is employed to optimize the electric field distributions. Furthermore, a new method to attach a quartz crystal to the electro-optic crystal along the electric field direction is proposed to improve the non-uniformity of the electric field. The integral error is reduced therefore from 0.5% to 0.015% and less. The proposed method is simple, practical and effective, and it has been validated by numerical simulations and experimental tests.

  10. Low Cost Plastic Optical Fiber Pressure Sensor Embedded in Mattress for Vital Signal Monitoring.

    PubMed

    Sartiano, Demetrio; Sales, Salvador

    2017-12-13

    The aim of this paper is to report the design of a low-cost plastic optical fiber (POF) pressure sensor, embedded in a mattress. We report the design of a multipoint sensor, a cheap alternative to the most common fiber sensors. The sensor is implemented using Arduino board, standard LEDs for optical communication in POF (λ = 645 nm) and a silicon light sensor. The Super ESKA ® plastic fibers were used to implement the fiber intensity sensor, arranged in a 4 × 4 matrix. During the breathing cycles, the force transmitted from the lungs to the thorax is in the order of tens of Newtons, and the respiration rate is of one breath every 2-5 s (0.2-0.5 Hz). The sensor has a resolution of force applied on a single point of 2.2-4.5%/N on the normalized voltage output, and a bandwidth of 10 Hz, it is then suitable to monitor the respiration movements. Another issue to be addressed is the presence of hysteresis over load cycles. The sensor was loaded cyclically to estimate the drift of the system, and the hysteresis was found to be negligible.

  11. Mobile patient monitoring based on impedance-loaded SAW-sensors.

    PubMed

    Karilainen, Anna; Finnberg, Thomas; Uelzen, Thorsten; Dembowski, Klaus; Müller, Jörg

    2004-11-01

    A remotely requestable, passive, short-range sensor network for measuring small voltages is presented. The sensor system is able to simultaneously monitor six small voltages in millivolt-range, and it can be used for Holter-electrocardiogram (ECG) and other biopotential monitoring, or in industrial applications. The sensors are based on a surface acoustic wave (SAW) delay line with voltage-dependent, impedance loading on a reflector interdigital transducer (IDT). The load circuit impedance is varied by the capacitance of the voltage-controlled varactor. High resolution is achieved by developing a MOS-capacitor with a thin oxide, low flat-band voltage, and zero-voltage capacitance in the space-charge region, as well as a high-Q-microcoil by thick metal electroplating. Simultaneous monitoring of multiple potentials is realized by time-division-multiplexing of different sensor signals.

  12. A monoclonal antibody that targets a NaV1.7 channel voltage sensor for pain and itch relief

    PubMed Central

    Lee, Jun-Ho; Park, Chul-Kyu; Chen, Gang; Han, Qingjian; Xie, Rou-Gang; Liu, Tong; Ji, Ru-Rong; Lee, Seok-Yong

    2014-01-01

    Summary Voltage-gated sodium (NaV) channels control the upstroke of the action potentials in excitable cells. Multiple studies have shown distinct roles of NaV channel subtypes in human physiology and diseases, but subtype-specific therapeutics are lacking and the current efforts have been limited to small molecules. Here we present a monoclonal antibody that targets the voltage-sensor paddle of NaV1.7, the subtype critical for pain sensation. This antibody not only inhibits NaV1.7 with high selectivity but also effectively suppresses inflammatory and neuropathic pain in mice. Interestingly, the antibody inhibits acute and chronic itch, despite well-documented differences in pain and itch modulation. Using this antibody, we discovered that NaV1.7 plays a key role in spinal cord nociceptive and pruriceptive synaptic transmission. Our studies reveal that NaV1.7 is a target for itch management and the antibody has therapeutic potential for suppressing pain and itch. Our antibody strategy may have broad applications for voltage-gated cation channels. PMID:24856969

  13. Disulfide mapping the voltage-sensing mechanism of a voltage-dependent potassium channel.

    PubMed

    Nozaki, Tomohiro; Ozawa, Shin-Ichiro; Harada, Hitomi; Kimura, Tomomi; Osawa, Masanori; Shimada, Ichio

    2016-11-17

    Voltage-dependent potassium (Kv) channels allow for the selective permeability of potassium ions in a membrane potential dependent manner, playing crucial roles in neurotransmission and muscle contraction. Kv channel is a tetramer, in which each subunit possesses a voltage-sensing domain (VSD) and a pore domain (PD). Although several lines of evidence indicated that membrane depolarization is sensed as the movement of helix S4 of the VSD, the detailed voltage-sensing mechanism remained elusive, due to the difficulty of structural analyses at resting potential. In this study, we conducted a comprehensive disulfide locking analysis of the VSD using 36 double Cys mutants, in order to identify the proximal residue pairs of the VSD in the presence or absence of a membrane potential. An intramolecular SS-bond was formed between 6 Cys pairs under both polarized and depolarized environment, and one pair only under depolarized environment. The multiple conformations captured by the SS-bond can be divided by two states, up and down, where S4 lies on the extracellular and intracellular sides of the membrane, respectively, with axial rotation of 180°. The transition between these two states is caused by the S4 translocation of 12 Å, enabling allosteric regulation of the gating at the PD.

  14. Differential contribution of Kv4-containing channels to A-type, voltage-gated potassium currents in somatic and visceral dorsal root ganglion neurons.

    PubMed

    Yunoki, Takakazu; Takimoto, Koichi; Kita, Kaori; Funahashi, Yasuhito; Takahashi, Ryosuke; Matsuyoshi, Hiroko; Naito, Seiji; Yoshimura, Naoki

    2014-11-15

    Little is known about electrophysiological differences of A-type transient K(+) (KA) currents in nociceptive afferent neurons that innervate somatic and visceral tissues. Staining with isolectin B4 (IB4)-FITC classifies L6-S1 dorsal root ganglion (DRG) neurons into three populations with distinct staining intensities: negative to weak, moderate, and intense fluorescence signals. All IB4 intensely stained cells are negative for a fluorescent dye, Fast Blue (FB), injected into the bladder wall, whereas a fraction of somatic neurons labeled by FB, injected to the external urethral dermis, is intensely stained with IB4. In whole-cell, patch-clamp recordings, phrixotoxin 2 (PaTx2), a voltage-gated K(+) (Kv)4 channel blocker, exhibits voltage-independent inhibition of the KA current in IB4 intensely stained cells but not the one in bladder-innervating cells. The toxin also shows voltage-independent inhibition of heterologously expressed Kv4.1 current, whereas its inhibition of Kv4.2 and Kv4.3 currents is voltage dependent. The swapping of four amino acids at the carboxyl portion of the S3 region between Kv4.1 and Kv4.2 transfers this characteristic. RT-PCRs detected Kv4.1 and the long isoform of Kv4.3 mRNAs without significant Kv4.2 mRNA in L6-S1 DRGs. Kv4.1 and Kv4.3 mRNA levels were higher in laser-captured, IB4-stained neurons than in bladder afferent neurons. These results indicate that PaTx2 acts differently on channels in the Kv4 family and that Kv4.1 and possibly Kv4.3 subunits functionally participate in the formation of KA channels in a subpopulation of somatic C-fiber neurons but not in visceral C-fiber neurons innervating the bladder. Copyright © 2014 the American Physiological Society.

  15. Differential contribution of Kv4-containing channels to A-type, voltage-gated potassium currents in somatic and visceral dorsal root ganglion neurons

    PubMed Central

    Yunoki, Takakazu; Takimoto, Koichi; Kita, Kaori; Funahashi, Yasuhito; Takahashi, Ryosuke; Matsuyoshi, Hiroko; Naito, Seiji

    2014-01-01

    Little is known about electrophysiological differences of A-type transient K+ (KA) currents in nociceptive afferent neurons that innervate somatic and visceral tissues. Staining with isolectin B4 (IB4)-FITC classifies L6-S1 dorsal root ganglion (DRG) neurons into three populations with distinct staining intensities: negative to weak, moderate, and intense fluorescence signals. All IB4 intensely stained cells are negative for a fluorescent dye, Fast Blue (FB), injected into the bladder wall, whereas a fraction of somatic neurons labeled by FB, injected to the external urethral dermis, is intensely stained with IB4. In whole-cell, patch-clamp recordings, phrixotoxin 2 (PaTx2), a voltage-gated K+ (Kv)4 channel blocker, exhibits voltage-independent inhibition of the KA current in IB4 intensely stained cells but not the one in bladder-innervating cells. The toxin also shows voltage-independent inhibition of heterologously expressed Kv4.1 current, whereas its inhibition of Kv4.2 and Kv4.3 currents is voltage dependent. The swapping of four amino acids at the carboxyl portion of the S3 region between Kv4.1 and Kv4.2 transfers this characteristic. RT-PCRs detected Kv4.1 and the long isoform of Kv4.3 mRNAs without significant Kv4.2 mRNA in L6-S1 DRGs. Kv4.1 and Kv4.3 mRNA levels were higher in laser-captured, IB4-stained neurons than in bladder afferent neurons. These results indicate that PaTx2 acts differently on channels in the Kv4 family and that Kv4.1 and possibly Kv4.3 subunits functionally participate in the formation of KA channels in a subpopulation of somatic C-fiber neurons but not in visceral C-fiber neurons innervating the bladder. PMID:25143545

  16. Use of external cavity quantum cascade laser compliance voltage in real-time trace gas sensing of multiple chemicals

    NASA Astrophysics Data System (ADS)

    Phillips, Mark C.; Taubman, Matthew S.; Kriesel, Jason

    2015-01-01

    We describe a prototype trace gas sensor designed for real-time detection of multiple chemicals. The sensor uses an external cavity quantum cascade laser (ECQCL) swept over its tuning range of 940-1075 cm-1 (9.30-10.7 μm) at a 10 Hz repetition rate. The sensor was designed for operation in multiple modes, including gas sensing within a multi-pass Heriott cell and intracavity absorption sensing using the ECQCL compliance voltage. In addition, the ECQCL compliance voltage was used to reduce effects of long-term drifts in the ECQCL output power. The sensor was characterized for noise, drift, and detection of chemicals including ammonia, methanol, ethanol, isopropanol, Freon- 134a, Freon-152a, and diisopropyl methylphosphonate (DIMP). We also present use of the sensor for mobile detection of ammonia downwind of cattle facilities, in which concentrations were recorded at 1-s intervals.

  17. Sensing charges of the Ciona intestinalis voltage-sensing phosphatase

    PubMed Central

    Frezza, Ludivine; Sandtner, Walter

    2013-01-01

    Voltage control over enzymatic activity in voltage-sensitive phosphatases (VSPs) is conferred by a voltage-sensing domain (VSD) located in the N terminus. These VSDs are constituted by four putative transmembrane segments (S1 to S4) resembling those found in voltage-gated ion channels. The putative fourth segment (S4) of the VSD contains positive residues that likely function as voltage-sensing elements. To study in detail how these residues sense the plasma membrane potential, we have focused on five arginines in the S4 segment of the Ciona intestinalis VSP (Ci-VSP). After implementing a histidine scan, here we show that four arginine-to-histidine mutants, namely R223H to R232H, mediate voltage-dependent proton translocation across the membrane, indicating that these residues transit through the hydrophobic core of Ci-VSP as a function of the membrane potential. These observations indicate that the charges carried by these residues are sensing charges. Furthermore, our results also show that the electrical field in VSPs is focused in a narrow hydrophobic region that separates the extracellular and intracellular space and constitutes the energy barrier for charge crossing. PMID:24127524

  18. Sensing charges of the Ciona intestinalis voltage-sensing phosphatase.

    PubMed

    Villalba-Galea, Carlos A; Frezza, Ludivine; Sandtner, Walter; Bezanilla, Francisco

    2013-11-01

    Voltage control over enzymatic activity in voltage-sensitive phosphatases (VSPs) is conferred by a voltage-sensing domain (VSD) located in the N terminus. These VSDs are constituted by four putative transmembrane segments (S1 to S4) resembling those found in voltage-gated ion channels. The putative fourth segment (S4) of the VSD contains positive residues that likely function as voltage-sensing elements. To study in detail how these residues sense the plasma membrane potential, we have focused on five arginines in the S4 segment of the Ciona intestinalis VSP (Ci-VSP). After implementing a histidine scan, here we show that four arginine-to-histidine mutants, namely R223H to R232H, mediate voltage-dependent proton translocation across the membrane, indicating that these residues transit through the hydrophobic core of Ci-VSP as a function of the membrane potential. These observations indicate that the charges carried by these residues are sensing charges. Furthermore, our results also show that the electrical field in VSPs is focused in a narrow hydrophobic region that separates the extracellular and intracellular space and constitutes the energy barrier for charge crossing.

  19. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

    PubMed Central

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

    2016-01-01

    This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

  20. A Disease Mutation Causing Episodic Ataxia Type I in the S1 Links Directly to the Voltage Sensor and the Selectivity Filter in Kv Channels.

    PubMed

    Petitjean, Dimitri; Kalstrup, Tanja; Zhao, Juan; Blunck, Rikard

    2015-09-02

    The mutation F184C in Kv1.1 leads to development of episodic ataxia type I (EA1). Although the mutation has been said to alter activation kinetics and to lower expression, we show here that the underlying molecular mechanisms may be more complex. Although F184 is positioned in the "peripheral" S1 helix, it occupies a central position in the 3D fold. We show in cut-open oocyte voltage-clamp recordings of gating and ionic currents of the Shaker Kv channel expressed in Xenopus oocytes that F184 not only interacts directly with the gating charges of the S4, but also creates a functional link to the selectivity filter of the neighboring subunit. This link leads to impaired fast and slow inactivation. The effect on fast inactivation is of an allosteric nature considering that fast inactivation is caused by a linked cytosolic ball peptide. The extensive effects of F184C provide a new mechanism underlying EA. Episodic ataxia (EA) is an inherited disease that leads to occasional loss of motor control in combination with variable other symptoms such as vertigo or migraine. EA type I (EA1), studied here, is caused by mutations in a voltage-gated potassium channel that contributes to the generation of electrical signals in the brain. The mechanism by which mutations in voltage-gated potassium channels lead to EA is still unknown and there is no consistent pharmacological treatment. By studying in detail one disease-causing mutation in Kv1.1, we describe a novel molecular mechanism distinct from mechanisms described previously. This mechanism contributes to the understanding of potassium channel function in general and might lead to a better understanding of how EA develops. Copyright © 2015 the authors 0270-6474/15/3512198-09$15.00/0.

  1. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  2. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  3. Design of Incident Field B-Dot Sensor for the Nose Boom of NASA F-106B Aircraft.

    DTIC Science & Technology

    1984-04-01

    ip , and 0. Figures 14 to 21 show the computed cBM(t), whereas Figures 22 to 29 show the computed M(t) as well as the sensor pick-up voltage Vs...is adequate signal corresponding to the inci- dent field. 34 6. d.) .0S E4 ~ 0000091 o~ VOZ -a--W0 009 .41 CA -4 809 r-4- 48J do u L)c 35C Cj .a C9 CD

  4. Profile structures of the voltage-sensor domain and the voltage-gated K+-channel vectorially oriented in a single phospholipid bilayer membrane at the solid-vapor and solid-liquid interfaces determined by x-ray interferometry

    PubMed Central

    Gupta, S.; Liu, J.; Strzalka, J.; Blasie, J. K.

    2011-01-01

    One subunit of the prokaryotic voltage-gated potassium ion channel from Aeropyrum pernix (KvAP) is comprised of six transmembrane α helices, of which S1–S4 form the voltage-sensor domain (VSD) and S5 and S6 contribute to the pore domain (PD) of the functional homotetramer. However, the mechanism of electromechanical coupling interconverting the closed-to-open (i.e., nonconducting-to-K+-conducting) states remains undetermined. Here, we have vectorially oriented the detergent (OG)-solubilized VSD in single monolayers by two independent approaches, namely “directed-assembly” and “self-assembly,” to achieve a high in-plane density. Both utilize Ni coordination chemistry to tether the protein to an alkylated inorganic surface via its C-terminal His6 tag. Subsequently, the detergent is replaced by phospholipid (POPC) via exchange, intended to reconstitute a phospholipid bilayer environment for the protein. X-ray interferometry, in which interference with a multilayer reference structure is used to both enhance and phase the specular x-ray reflectivity from the tethered single membrane, was used to determine directly the electron density profile structures of the VSD protein solvated by detergent versus phospholipid, and with either a moist He (moderate hydration) or bulk aqueous buffer (high hydration) environment to preserve a native structure conformation. Difference electron density profiles, with respect to the multilayer substrate itself, for the VSD-OG monolayer and VSD-POPC membranes at both the solid-vapor and solid-liquid interfaces, reveal the profile structures of the VSD protein dominating these profiles and further indicate a successful reconstitution of a lipid bilayer environment. The self-assembly approach was similarly extended to the intact full-length KvAP channel for comparison. The spatial extent and asymmetry in the profile structures of both proteins confirm their unidirectional vectorial orientation within the reconstituted membrane and

  5. Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions

    PubMed Central

    Freites, J. Alfredo; Tobias, Douglas J.

    2015-01-01

    Voltage-sensing domains (VSDs) are integral membrane protein units that sense changes in membrane electric potential, and through the resulting conformational changes, regulate a specific function. VSDs confer voltage-sensitivity to a large superfamily of membrane proteins that includes voltage-gated Na+, K+, Ca2+, and H+ selective channels, hyperpolarization-activated cyclic nucleotide-gated channels, and voltage-sensing phosphatases. VSDs consist of four transmembrane segments (termed S1 through S4). Their most salient structural feature is the highly conserved positions for charged residues in their sequences. S4 exhibits at least three conserved triplet repeats composed of one basic residue (mostly arginine) followed by two hydrophobic residues. These S4 basic side chains participate in a state-dependent internal salt-bridge network with at least four acidic residues in S1–S3. The signature of voltage-dependent activation in electrophysiology experiments is a transient current (termed gating or sensing current) upon a change in applied membrane potential as the basic side chains in S4 move across the membrane electric field. Thus, the unique structural features of the VSD architecture allow for competing requirements: maintaining a series of stable transmembrane conformations, while allowing charge motion, as briefly reviewed here. PMID:25972106

  6. Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions.

    PubMed

    Freites, J Alfredo; Tobias, Douglas J

    2015-06-01

    Voltage-sensing domains (VSDs) are integral membrane protein units that sense changes in membrane electric potential, and through the resulting conformational changes, regulate a specific function. VSDs confer voltage-sensitivity to a large superfamily of membrane proteins that includes voltage-gated Na[Formula: see text], K[Formula: see text], Ca[Formula: see text] ,and H[Formula: see text] selective channels, hyperpolarization-activated cyclic nucleotide-gated channels, and voltage-sensing phosphatases. VSDs consist of four transmembrane segments (termed S1 through S4). Their most salient structural feature is the highly conserved positions for charged residues in their sequences. S4 exhibits at least three conserved triplet repeats composed of one basic residue (mostly arginine) followed by two hydrophobic residues. These S4 basic side chains participate in a state-dependent internal salt-bridge network with at least four acidic residues in S1-S3. The signature of voltage-dependent activation in electrophysiology experiments is a transient current (termed gating or sensing current) upon a change in applied membrane potential as the basic side chains in S4 move across the membrane electric field. Thus, the unique structural features of the VSD architecture allow for competing requirements: maintaining a series of stable transmembrane conformations, while allowing charge motion, as briefly reviewed here.

  7. FLASH X-RAY (FXR) LINEAR INDUCTION ACCELERATOR (LIA) OPTIMIZATION Sensor Delay Correction

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ong, M M; Houck, T L; Kreitzer, B R

    2006-05-01

    The radiographic goal of the FXR Optimization Project is to generate an x-ray pulse with peak energy of 19 MeV, spot-size of 1.5 mm, a dose of 500 rad, and duration of 60 ns. The electrical objectives are to generate a 3 kA electron-beam and refine our 16 MV accelerator so that the voltage does not vary more than 1%-rms. In a multi-cell linear induction accelerator, like FXR, the timing of the acceleration pulses relative to the beam is critical. The pulses must be timed optimally so that a cell is at full voltage before the beam arrives and doesmore » not drop until the beam passes. In order to stay within the energy-variation budget, the synchronization between the cells and beam arrival must be controlled to a couple of nanoseconds. Therefore, temporal measurements must be accurate to a fraction of a nanosecond. FXR Optimization Project developed a one-giga-sample per second (gs/s) data acquisition system to record beam sensor data. Signal processing algorithms were written to determine cell timing with an uncertainty of a fraction of a nanosecond. However, the uncertainty in the sensor delay was still a few nanoseconds. This error had to be reduced if we are to improve the quality of the electron beam. Two types of sensors are used to align the cell voltage pulse against the beam current. The beam current is measured with resistive-wall sensors. The cell voltages are read with capacitive voltage monitors. Sensor delays can be traced to two mechanisms: (1) the sensors are not co-located at the beam and cell interaction points, and (2) the sensors have different length jumper cables and other components that connect them to the standard-length coaxial cables of the data acquisition system. Using the physical locations and dimensions of the sensor components, and the dielectric constant of the materials, delay times were computed. Relative to the cell voltage, the beam current was theoretically reporting late by 7.7 ns. Two experiments were performed to verify

  8. Periodic perturbations in Shaker K+ channel gating kinetics by deletions in the S3–S4 linker

    PubMed Central

    Gonzalez, Carlos; Rosenman, Eduardo; Bezanilla, Francisco; Alvarez, Osvaldo; Latorre, Ramon

    2001-01-01

    Upon depolarization positive charges contained in the transmembrane segment S4 of voltage-dependent channels are displaced from the cytoplasmic to the external milieu. This charge movement leads to channel opening. In Shaker K+ channels four positively charged arginines in the S4 domain are transferred from the internal to the external side of the channel during activation. The distance traveled by the S4 segment during activation is unknown, but large movements should be constrained by the S3–S4 linker. Constructing deletion mutants, we show that the activation time constant and the midpoint of the voltage activation curve of the Shaker K+ channel macroscopic currents becomes a periodic function of the S3–S4 linker length for linkers shorter than 7 aa residues. The periodicity is that typical of α-helices. Moreover, a linker containing only 3 aa is enough to recover the wild-type phenotype. The deletion method revealed the importance of the S3–S4 linker in determining the channel gating kinetics and indicated that the α-helical nature of S4 extends toward its N terminus. These results support the notion that a small displacement of the S4 segment suffices to displace the four gating charges involved in channel opening. PMID:11493701

  9. Room-temperature H2S Gas Sensor Based on Au-doped ZnFe2O4 Yolk-shell Microspheres.

    PubMed

    Yan, Yin; Nizamidin, Patima; Turdi, Gulmira; Kari, Nuerguli; Yimit, Abliz

    2017-01-01

    Room-temperature type H 2 S sensing devices that use Au-doped ZnFe 2 O 4 yolk-shell microspheres as the active material have been fabricated using a solvothermal method as well as subsequent annealing and a chemical etching process. The samples are characterized using X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), field-emission scanning electron microscopy (FESEM), and X-ray photoelectron spectroscopy (XPS). The results demonstrate that the doping of Au does not change the spinel structure of the products, which were yolk-shell microspheres, while the particle size varied with the Au doping concentration. Also, the as-fabricated sensor device exhibited excellent selectivity toward H 2 S gas at the room temperature; the gas-sensing property of 2 wt% Au-doped ZnFe 2 O 4 microspheres was the best. The Au-doped ZnFe 2 O 4 yolk-shell microspheres can be promising as a sensing material for H 2 S gas detecting at room temperature.

  10. The hitchhiker’s guide to the voltage-gated sodium channel galaxy

    PubMed Central

    2016-01-01

    Eukaryotic voltage-gated sodium (Nav) channels contribute to the rising phase of action potentials and served as an early muse for biophysicists laying the foundation for our current understanding of electrical signaling. Given their central role in electrical excitability, it is not surprising that (a) inherited mutations in genes encoding for Nav channels and their accessory subunits have been linked to excitability disorders in brain, muscle, and heart; and (b) Nav channels are targeted by various drugs and naturally occurring toxins. Although the overall architecture and behavior of these channels are likely to be similar to the more well-studied voltage-gated potassium channels, eukaryotic Nav channels lack structural and functional symmetry, a notable difference that has implications for gating and selectivity. Activation of voltage-sensing modules of the first three domains in Nav channels is sufficient to open the channel pore, whereas movement of the domain IV voltage sensor is correlated with inactivation. Also, structure–function studies of eukaryotic Nav channels show that a set of amino acids in the selectivity filter, referred to as DEKA locus, is essential for Na+ selectivity. Structures of prokaryotic Nav channels have also shed new light on mechanisms of drug block. These structures exhibit lateral fenestrations that are large enough to allow drugs or lipophilic molecules to gain access into the inner vestibule, suggesting that this might be the passage for drug entry into a closed channel. In this Review, we will synthesize our current understanding of Nav channel gating mechanisms, ion selectivity and permeation, and modulation by therapeutics and toxins in light of the new structures of the prokaryotic Nav channels that, for the time being, serve as structural models of their eukaryotic counterparts. PMID:26712848

  11. Voltage-Gated Channel Mechanosensitivity: Fact or Friction?

    PubMed Central

    Morris, Catherine E.

    2011-01-01

    The heart is a continually active pulsatile fluid pump. It generates appropriate forces by precisely timed and spaced engagement of its contractile machinery. Largely, it makes its own control signals, the most crucial of which are precisely timed and spaced fluxes of ions across the sarcolemma, achieved by the timely opening and closing of diverse voltage-gated channels (VGC). VGCs have four voltage sensors around a central ion-selective pore that opens and closes under the influence of membrane voltage. Operation of any VGC is secondarily tuned by the mechanical state (i.e., structure) of the bilayer in which it is embedded. Rates of opening and closing, in other words, vary with bilayer structure. Thus, in the intensely mechanical environment of the myocardium and its vasculature, VGCs kinetics might be routinely modulated by reversible and irreversible nano-scale changes in bilayer structure. If subtle bilayer deformations are routine in the pumping heart, VGCs could be subtly transducing bilayer mechanical signals, thereby tuning cardiac rhythmicity, collectively contributing to mechano-electric feedback. Reversible bilayer deformations would be expected with changing shear flows and tissue distension, while irreversible bilayer restructuring occurs with ischemia, inflammation, membrane remodeling, etc. I suggest that tools now available could be deployed to help probe whether/how the inherent mechanosensitivity of VGCs – an attribute substantially reflecting the dependence of voltage sensor stability on bilayer structure – contributes to cardiac rhythmicity. Chief among these tools are voltage sensor toxins (whose inhibitory efficacy varies with the mechanical state of bilayer) and arrhythmia-inducing VGC mutants with distinctive mechano-phenotypes. PMID:21660289

  12. Alpha-Particle Gas-Pressure Sensor

    NASA Technical Reports Server (NTRS)

    Buehler, M. C.; Bell, L. D.; Hecht, M. H.

    1996-01-01

    An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

  13. NCO-sP(EO-stat-PO) coatings on gold sensors--a QCM study of hemocompatibility.

    PubMed

    Sinn, Stefan; Eichler, Mirjam; Müller, Lothar; Bünger, Daniel; Groll, Jürgen; Ziemer, Gerhard; Rupp, Frank; Northoff, Hinnak; Geis-Gerstorfer, Jürgen; Gehring, Frank K; Wendel, Hans P

    2011-01-01

    The reliability of implantable blood sensors is often hampered by unspecific adsorption of plasma proteins and blood cells. This not only leads to a loss of sensor signal over time, but can also result in undesired host vs. graft reactions. Within this study we evaluated the hemocompatibility of isocyanate conjugated star shaped polytheylene oxide-polypropylene oxide co-polymers NCO-sP(EO-stat-PO) when applied to gold surfaces as an auspicious coating material for gold sputtered blood contacting sensors. Quartz crystal microbalance (QCM) sensors were coated with ultrathin NCO-sP(EO-stat-PO) films and compared with uncoated gold sensors. Protein resistance was assessed by QCM measurements with fibrinogen solution and platelet poor plasma (PPP), followed by quantification of fibrinogen adsorption. Hemocompatibility was tested by incubation with human platelet rich plasma (PRP). Thrombin antithrombin-III complex (TAT), β-thromboglobulin (β-TG) and platelet factor 4 (PF4) were used as coagulation activation markers. Furthermore, scanning electron microscopy (SEM) was used to visualize platelet adhesion to the sensor surfaces. Compared to uncoated gold sensors, NCO-sP(EO-stat-PO) coated sensors revealed significant better resistance against protein adsorption, lower TAT generation and a lower amount of adherent platelets. Moreover, coating with ultrathin NCO-sP(EO-stat-PO) films creates a cell resistant hemocompatible surface on gold that increases the chance of prolonged sensor functionality and can easily be modified with specific receptor molecules.

  14. FR4-based electromagnetic energy harvester for wireless sensor nodes

    NASA Astrophysics Data System (ADS)

    Hatipoglu, G.; Ürey, H.

    2010-01-01

    Electromagnetic (EM) energy harvesting seems to be one of the most promising ways to power wireless sensors in a wireless sensor network. In this paper, FR4, the most commonly used PCB material, is utilized as a mechanical vibrating structure for EM energy harvesting for body-worn sensors and intelligent tire sensors, which involve impact loadings. FR4 can be a better material for such applications compared to silicon MEMS devices due to lower stiffness and broadband response. In order to demonstrate FR4 performance and broadband response, three moving magnet type EM generator designs are developed and investigated throughout the paper. A velocity-damped harvester simulation model is first developed, including a detailed magnetic model and the magnetic damping effects. The numerical results agree well with the experimental results. Human running acceleration at the hip area that is obtained experimentally is simulated in order to demonstrate system performance, which results in a scavenged power of about 40 µW with 15 m s-2 acceleration input. The designed FR4 energy scavengers with mechanical stoppers implemented are particularly well suited for nearly periodic and non-sinusoidal high- g excitations with rich harmonic content. For the intelligent tire applications, a special compact FR4 scavenger is designed that is able to withstand large shocks and vibrations due to mechanical shock stoppers built into the structure. Using our design, 0.4 mW power across a load resistance at off-resonance operation is obtained in shaker experiments. In the actual operation, the tangential accelerations as a result of the tire-road contact are estimated to supply power around 1 mW with our design, which is sufficient for powering wireless tire sensors. The normalized power density (NPD) of the designed actuators compares favorably with most actuators reported in the literature.

  15. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Patel, N.; Department of Electrical and Computer Engineering, MSC01 1100, University of New Mexico, Albuquerque, New Mexico 87131-0001; Branch, D. W.

    2015-08-15

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO{sub 3}) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5more » μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  16. Comparative study of 0° X-cut and Y+36°-cut lithium niobate high-voltage sensing

    DOE PAGES

    Patel, N.; Branch, D. W.; Schamiloglu, E.; ...

    2015-08-11

    A comparison study between Y+36° and 0° X-cut lithium niobate (LiNbO 3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y+36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses tomore » both crystals, the voltage-induced shift scaled linearly with voltage. For the Y+36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y+36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y+36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. Furthermore, when the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.« less

  17. A Fully Integrated Sensor SoC with Digital Calibration Hardware and Wireless Transceiver at 2.4 GHz

    PubMed Central

    Kim, Dong-Sun; Jang, Sung-Joon; Hwang, Tae-Ho

    2013-01-01

    A single-chip sensor system-on-a-chip (SoC) that implements radio for 2.4 GHz, complete digital baseband physical layer (PHY), 10-bit sigma-delta analog-to-digital converter and dedicated sensor calibration hardware for industrial sensing systems has been proposed and integrated in a 0.18-μm CMOS technology. The transceiver's building block includes a low-noise amplifier, mixer, channel filter, receiver signal-strength indicator, frequency synthesizer, voltage-controlled oscillator, and power amplifier. In addition, the digital building block consists of offset quadrature phase-shift keying (OQPSK) modulation, demodulation, carrier frequency offset compensation, auto-gain control, digital MAC function, sensor calibration hardware and embedded 8-bit microcontroller. The digital MAC function supports cyclic redundancy check (CRC), inter-symbol timing check, MAC frame control, and automatic retransmission. The embedded sensor signal processing block consists of calibration coefficient calculator, sensing data calibration mapper and sigma-delta analog-to-digital converter with digital decimation filter. The sensitivity of the overall receiver and the error vector magnitude (EVM) of the overall transmitter are −99 dBm and 18.14%, respectively. The proposed calibration scheme has a reduction of errors by about 45.4% compared with the improved progressive polynomial calibration (PPC) method and the maximum current consumption of the SoC is 16 mA. PMID:23698271

  18. Voltage-gated proton (H(v)1) channels, a singular voltage sensing domain.

    PubMed

    Castillo, Karen; Pupo, Amaury; Baez-Nieto, David; Contreras, Gustavo F; Morera, Francisco J; Neely, Alan; Latorre, Ramon; Gonzalez, Carlos

    2015-11-14

    The main role of voltage-gated proton channels (Hv1) is to extrude protons from the intracellular milieu when, mediated by different cellular processes, the H(+) concentration increases. Hv1 are exquisitely selective for protons and their structure is homologous to the voltage sensing domain (VSD) of other voltage-gated ion channels like sodium, potassium, and calcium channels. In clear contrast to the classical voltage-dependent channels, Hv1 lacks a pore domain and thus permeation necessarily occurs through the voltage sensing domain. Hv1 channels are activated by depolarizing voltages, and increases in internal proton concentration. It has been proposed that local conformational changes of the transmembrane segment S4, driven by depolarization, trigger the molecular rearrangements that open Hv1. However, it is still unclear how the electromechanical coupling is achieved between the VSD and the potential pore, allowing the proton flux from the intracellular to the extracellular side. Here we provide a revised view of voltage activation in Hv1 channels, offering a comparative scenario with other voltage sensing channels domains. Copyright © 2015 Federation of European Biochemical Societies. Published by Elsevier B.V. All rights reserved.

  19. A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications

    PubMed Central

    Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

    2015-01-01

    This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation. PMID:25806868

  20. A CMOS pressure sensor tag chip for passive wireless applications.

    PubMed

    Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

    2015-03-23

    This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

  1. Voltage-sensitive rhodol with enhanced two-photon brightness.

    PubMed

    Kulkarni, Rishikesh U; Kramer, Daniel J; Pourmandi, Narges; Karbasi, Kaveh; Bateup, Helen S; Miller, Evan W

    2017-03-14

    We have designed, synthesized, and applied a rhodol-based chromophore to a molecular wire-based platform for voltage sensing to achieve fast, sensitive, and bright voltage sensing using two-photon (2P) illumination. Rhodol VoltageFluor-5 (RVF5) is a voltage-sensitive dye with improved 2P cross-section for use in thick tissue or brain samples. RVF5 features a dichlororhodol core with pyrrolidyl substitution at the nitrogen center. In mammalian cells under one-photon (1P) illumination, RVF5 demonstrates high voltage sensitivity (28% ΔF/F per 100 mV) and improved photostability relative to first-generation voltage sensors. This photostability enables multisite optical recordings from neurons lacking tuberous sclerosis complex 1, Tsc1, in a mouse model of genetic epilepsy. Using RVF5, we show that Tsc1 KO neurons exhibit increased activity relative to wild-type neurons and additionally show that the proportion of active neurons in the network increases with the loss of Tsc1. The high photostability and voltage sensitivity of RVF5 is recapitulated under 2P illumination. Finally, the ability to chemically tune the 2P absorption profile through the use of rhodol scaffolds affords the unique opportunity to image neuronal voltage changes in acutely prepared mouse brain slices using 2P illumination. Stimulation of the mouse hippocampus evoked spiking activity that was readily discerned with bath-applied RVF5, demonstrating the utility of RVF5 and molecular wire-based voltage sensors with 2P-optimized fluorophores for imaging voltage in intact brain tissue.

  2. Voltage-sensitive rhodol with enhanced two-photon brightness

    PubMed Central

    Kulkarni, Rishikesh U.; Kramer, Daniel J.; Pourmandi, Narges; Karbasi, Kaveh; Bateup, Helen S.

    2017-01-01

    We have designed, synthesized, and applied a rhodol-based chromophore to a molecular wire-based platform for voltage sensing to achieve fast, sensitive, and bright voltage sensing using two-photon (2P) illumination. Rhodol VoltageFluor-5 (RVF5) is a voltage-sensitive dye with improved 2P cross-section for use in thick tissue or brain samples. RVF5 features a dichlororhodol core with pyrrolidyl substitution at the nitrogen center. In mammalian cells under one-photon (1P) illumination, RVF5 demonstrates high voltage sensitivity (28% ΔF/F per 100 mV) and improved photostability relative to first-generation voltage sensors. This photostability enables multisite optical recordings from neurons lacking tuberous sclerosis complex 1, Tsc1, in a mouse model of genetic epilepsy. Using RVF5, we show that Tsc1 KO neurons exhibit increased activity relative to wild-type neurons and additionally show that the proportion of active neurons in the network increases with the loss of Tsc1. The high photostability and voltage sensitivity of RVF5 is recapitulated under 2P illumination. Finally, the ability to chemically tune the 2P absorption profile through the use of rhodol scaffolds affords the unique opportunity to image neuronal voltage changes in acutely prepared mouse brain slices using 2P illumination. Stimulation of the mouse hippocampus evoked spiking activity that was readily discerned with bath-applied RVF5, demonstrating the utility of RVF5 and molecular wire-based voltage sensors with 2P-optimized fluorophores for imaging voltage in intact brain tissue. PMID:28242676

  3. The isolated voltage sensing domain of the Shaker potassium channel forms a voltage-gated cation channel.

    PubMed

    Zhao, Juan; Blunck, Rikard

    2016-10-06

    Domains in macromolecular complexes are often considered structurally and functionally conserved while energetically coupled to each other. In the modular voltage-gated ion channels the central ion-conducting pore is surrounded by four voltage sensing domains (VSDs). Here, the energetic coupling is mediated by interactions between the S4-S5 linker, covalently linking the domains, and the proximal C-terminus. In order to characterize the intrinsic gating of the voltage sensing domain in the absence of the pore domain, the Shaker Kv channel was truncated after the fourth transmembrane helix S4 (Shaker-iVSD). Shaker-iVSD showed significantly altered gating kinetics and formed a cation-selective ion channel with a strong preference for protons. Ion conduction in Shaker-iVSD developed despite identical primary sequence, indicating an allosteric influence of the pore domain. Shaker-iVSD also displays pronounced 'relaxation'. Closing of the pore correlates with entry into relaxation suggesting that the two processes are energetically related.

  4. Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation.

    PubMed

    Peters, Colin H; Yu, Alec; Zhu, Wandi; Silva, Jonathan R; Ruben, Peter C

    2017-01-01

    E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation.

  5. A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors

    PubMed Central

    Nefti-Meziani, Samia; Carbonaro, Nicola

    2017-01-01

    Electrical Impedance Tomography (EIT) is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR) and Boundary Voltage Changes (BVC), and study image quality with Size Error (SE), Position Error (PE) and Ringing (RNG) parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively. PMID:28858252

  6. A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors.

    PubMed

    Russo, Stefania; Nefti-Meziani, Samia; Carbonaro, Nicola; Tognetti, Alessandro

    2017-08-31

    Electrical Impedance Tomography (EIT) is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR) and Boundary Voltage Changes (BVC), and study image quality with Size Error (SE), Position Error (PE) and Ringing (RNG) parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively.

  7. Piezoelectric bimorph optical-fiber sensor.

    PubMed

    Sun, Fengguo; Xiao, Gaozhi; Zhang, Zhiyi; Grover, Chander P

    2004-03-20

    We propose and demonstrate a novel high-voltage optical-fiber sensor. This sensor consists of an emitting fiber, a receiving fiber, and a piezoelectric bimorph transducer. The emitting fiber is fixed in a base, whereas the receiving fiber is mounted on the free end of the piezoelectric bimorph transducer. When a voltage is applied to the piezoelectric bimorph transducer, its free end is displaced over a distance delta. The displacement induces a loss in the optical coupling between the emitting and the receiving fiber. The voltage can be measured by monitoring the coupling loss.

  8. A 4MP high-dynamic-range, low-noise CMOS image sensor

    NASA Astrophysics Data System (ADS)

    Ma, Cheng; Liu, Yang; Li, Jing; Zhou, Quan; Chang, Yuchun; Wang, Xinyang

    2015-03-01

    In this paper we present a 4 Megapixel high dynamic range, low dark noise and dark current CMOS image sensor, which is ideal for high-end scientific and surveillance applications. The pixel design is based on a 4-T PPD structure. During the readout of the pixel array, signals are first amplified, and then feed to a low- power column-parallel ADC array which is already presented in [1]. Measurement results show that the sensor achieves a dynamic range of 96dB, a dark noise of 1.47e- at 24fps speed. The dark current is 0.15e-/pixel/s at -20oC.

  9. Chemical sensors are hybrid-input memristors

    NASA Astrophysics Data System (ADS)

    Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

    2018-04-01

    Memristors are two-terminal electronic devices whose resistance depends on the history of input signal (voltage or current). Here we demonstrate that the chemical gas sensors can be considered as memristors with a generalized (hybrid) input, namely, with the input consisting of the voltage, analyte concentrations and applied temperature. The concept of hybrid-input memristors is demonstrated experimentally using a single-walled carbon nanotubes chemical sensor. It is shown that with respect to the hybrid input, the sensor exhibits some features common with memristors such as the hysteretic input-output characteristics. This different perspective on chemical gas sensors may open new possibilities for smart sensor applications.

  10. Probabilistic QoS Analysis In Wireless Sensor Networks

    DTIC Science & Technology

    2012-04-01

    and A.O. Fapojuwo. TDMA scheduling with optimized energy efficiency and minimum delay in clustered wireless sensor networks . IEEE Trans. on Mobile...Research Computer Science and Engineering, Department of 5-1-2012 Probabilistic QoS Analysis in Wireless Sensor Networks Yunbo Wang University of...Wang, Yunbo, "Probabilistic QoS Analysis in Wireless Sensor Networks " (2012). Computer Science and Engineering: Theses, Dissertations, and Student

  11. NMR investigation of the isolated second voltage-sensing domain of human Nav1.4 channel.

    PubMed

    Paramonov, A S; Lyukmanova, E N; Myshkin, M Yu; Shulepko, M A; Kulbatskii, D S; Petrosian, N S; Chugunov, A O; Dolgikh, D A; Kirpichnikov, M P; Arseniev, A S; Shenkarev, Z O

    2017-03-01

    Voltage-gated Na + channels are essential for the functioning of cardiovascular, muscular, and nervous systems. The α-subunit of eukaryotic Na + channel consists of ~2000 amino acid residues and encloses 24 transmembrane (TM) helices, which form five membrane domains: four voltage-sensing (VSD) and one pore domain. The structural complexity significantly impedes recombinant production and structural studies of full-sized Na + channels. Modular organization of voltage-gated channels gives an idea for studying of the isolated second VSD of human skeletal muscle Nav1.4 channel (VSD-II). Several variants of VSD-II (~150a.a., four TM helices) with different N- and C-termini were produced by cell-free expression. Screening of membrane mimetics revealed low stability of VSD-II samples in media containing phospholipids (bicelles, nanodiscs) associated with the aggregation of electrically neutral domain molecules. The almost complete resonance assignment of 13 C, 15 N-labeled VSD-II was obtained in LPPG micelles. The secondary structure of VSD-II showed similarity with the structures of bacterial Na + channels. The fragment of S4 TM helix between the first and second conserved Arg residues probably adopts 3 10 -helical conformation. Water accessibility of S3 helix, observed by the Mn 2+ titration, pointed to the formation of water-filled crevices in the micelle embedded VSD-II. 15 N relaxation data revealed characteristic pattern of μs-ms time scale motions in the VSD-II regions sharing expected interhelical contacts. VSD-II demonstrated enhanced mobility at ps-ns time scale as compared to isolated VSDs of K + channels. These results validate structural studies of isolated VSDs of Na + channels and show possible pitfalls in application of this 'divide and conquer' approach. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Ultra high voltage MOS controlled 4H-SiC power switching devices

    NASA Astrophysics Data System (ADS)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.

    2015-08-01

    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  13. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, ormore » alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.« less

  14. In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

    PubMed Central

    Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

    2010-01-01

    The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse. PMID:22163556

  15. In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

    PubMed

    Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

    2010-01-01

    The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

  16. Thermally evaporated Cu2ZnSnS4 solar cells

    NASA Astrophysics Data System (ADS)

    Wang, K.; Gunawan, O.; Todorov, T.; Shin, B.; Chey, S. J.; Bojarczuk, N. A.; Mitzi, D.; Guha, S.

    2010-10-01

    High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in the minutes. Detailed electrical analysis of the devices indicate that the performance of the devices is limited by high series resistance, a "double diode" behavior of the current voltage characteristics, and an open circuit voltage that is limited by a carrier recombination process with an activation energy below the band gap of the material.

  17. Ultrathin flexible piezoelectric sensors for monitoring eye fatigue

    NASA Astrophysics Data System (ADS)

    Lü, Chaofeng; Wu, Shuang; Lu, Bingwei; Zhang, Yangyang; Du, Yangkun; Feng, Xue

    2018-02-01

    Eye fatigue is a symptom induced by long-term work of both eyes and brains. Without proper treatment, eye fatigue may incur serious problems. Current studies on detecting eye fatigue mainly focus on computer vision detect technology which can be very unreliable due to occasional bad visual conditions. As a solution, we proposed a wearable conformal in vivo eye fatigue monitoring sensor that contains an array of piezoelectric nanoribbons integrated on an ultrathin flexible substrate. By detecting strains on the skin of eyelid, the sensors may collect information about eye blinking, and, therefore, reveal human’s fatigue state. We first report the design and fabrication of the piezoelectric sensor and experimental characterization of voltage responses of the piezoelectric sensors. Under bending stress, the output voltage curves yield key information about the motion of human eyelid. We also develop a theoretical model to reveal the underlying mechanism of detecting eyelid motion. Both mechanical load test and in vivo test are conducted to convince the working performance of the sensors. With satisfied durability and high sensitivity, this sensor may efficiently detect abnormal eyelid motions, such as overlong closure, high blinking frequency, low closing speed and weak gazing strength, and may hopefully provide feedback for assessing eye fatigue in time so that unexpected situations can be prevented.

  18. Ternary Kv4.2 channels recapitulate voltage-dependent inactivation kinetics of A-type K+ channels in cerebellar granule neurons.

    PubMed

    Amarillo, Yimy; De Santiago-Castillo, Jose A; Dougherty, Kevin; Maffie, Jonathon; Kwon, Elaine; Covarrubias, Manuel; Rudy, Bernardo

    2008-04-15

    Kv4 channels mediate most of the somatodendritic subthreshold operating A-type current (I(SA)) in neurons. This current plays essential roles in the regulation of spike timing, repetitive firing, dendritic integration and plasticity. Neuronal Kv4 channels are thought to be ternary complexes of Kv4 pore-forming subunits and two types of accessory proteins, Kv channel interacting proteins (KChIPs) and the dipeptidyl-peptidase-like proteins (DPPLs) DPPX (DPP6) and DPP10. In heterologous cells, ternary Kv4 channels exhibit inactivation that slows down with increasing depolarization. Here, we compared the voltage dependence of the inactivation rate of channels expressed in heterologous mammalian cells by Kv4.2 proteins with that of channels containing Kv4.2 and KChIP1, Kv4.2 and DPPX-S, or Kv4.2, KChIP1 and DPPX-S, and found that the relation between inactivation rate and membrane potential is distinct for these four conditions. Moreover, recordings from native neurons showed that the inactivation kinetics of the I(SA) in cerebellar granule neurons has voltage dependence that is remarkably similar to that of ternary Kv4 channels containing KChIP1 and DPPX-S proteins in heterologous cells. The fact that this complex and unique behaviour (among A-type K(+) currents) is observed in both the native current and the current expressed in heterologous cells by the ternary complex containing Kv4, DPPX and KChIP proteins supports the hypothesis that somatically recorded native Kv4 channels in neurons include both types of accessory protein. Furthermore, quantitative global kinetic modelling showed that preferential closed-state inactivation and a weakly voltage-dependent opening step can explain the slowing of the inactivation rate with increasing depolarization. Therefore, it is likely that preferential closed-state inactivation is the physiological mechanism that regulates the activity of both ternary Kv4 channel complexes and native I(SA)-mediating channels.

  19. Pharmacology of the Nav1.1 domain IV voltage sensor reveals coupling between inactivation gating processes.

    PubMed

    Osteen, Jeremiah D; Sampson, Kevin; Iyer, Vivek; Julius, David; Bosmans, Frank

    2017-06-27

    The Na v 1.1 voltage-gated sodium channel is a critical contributor to excitability in the brain, where pathological loss of function leads to such disorders as epilepsy, Alzheimer's disease, and autism. This voltage-gated sodium (Na v ) channel subtype also plays an important role in mechanical pain signaling by primary afferent somatosensory neurons. Therefore, pharmacologic modulation of Na v 1.1 represents a potential strategy for treating excitability disorders of the brain and periphery. Inactivation is a complex aspect of Na v channel gating and consists of fast and slow components, each of which may involve a contribution from one or more voltage-sensing domains. Here, we exploit the Hm1a spider toxin, a Na v 1.1-selective modulator, to better understand the relationship between these temporally distinct modes of inactivation and ask whether they can be distinguished pharmacologically. We show that Hm1a inhibits the gating movement of the domain IV voltage sensor (VSDIV), hindering both fast and slow inactivation and leading to an increase in Na v 1.1 availability during high-frequency stimulation. In contrast, ICA-121431, a small-molecule Na v 1.1 inhibitor, accelerates a subsequent VSDIV gating transition to accelerate entry into the slow inactivated state, resulting in use-dependent block. Further evidence for functional coupling between fast and slow inactivation is provided by a Na v 1.1 mutant in which fast inactivation removal has complex effects on slow inactivation. Taken together, our data substantiate the key role of VSDIV in Na v channel fast and slow inactivation and demonstrate that these gating processes are sequential and coupled through VSDIV. These findings provide insight into a pharmacophore on VSDIV through which modulation of inactivation gating can inhibit or facilitate Na v 1.1 function.

  20. Novel Battery Management System with Distributed Wireless and Fiber Optic Sensors for Early Detection and Suppression of Thermal Runaway in Large Battery Packs, FY13 Q4 Report, ARPA-E Program: Advanced Management Protection of Energy Storage Devices (AMPE

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Farmer, J.; Chang, J.; Zumstein, J.

    Technology has been developed that enables monitoring of individual cells in highcapacity lithium-ion battery packs, with a distributed array of wireless Bluetooth 4.0 tags and sensors, and without proliferation of extensive wiring harnesses. Given the safety challenges facing lithium-ion batteries in electric vehicle, civilian aviation and defense applications, these wireless sensors may be particularly important to these emerging markets. These wireless sensors will enhance the performance, reliability and safety of such energy storage systems. Specific accomplishments to date include, but are not limited to: (1) the development of wireless tags using Bluetooth 4.0 standard to monitor a large array ofmore » sensors in battery pack; (2) sensor suites enabling the simultaneous monitoring of cell voltage, cell current, cell temperature, and package strain, indicative of swelling and increased internal pressure, (3) small receivers compatible with USB ports on portable computers; (4) software drivers and logging software; (5) a 7S2P battery simulator, enabling the safe development of wireless BMS hardware in the laboratory; (6) demonstrated data transmission out of metal enclosures, including battery box, with small variable aperture opening; (7) test data demonstrating the accurate and reliable operation of sensors, with transmission of terminal voltage, cell temperature and package strain at distances up to 110 feet; (8) quantification of the data transmission error as a function of distance, in both indoor and outdoor operation; (9) electromagnetic interference testing during operation with live, high-capacity battery management system at Yardney Technical Products; (10) demonstrated operation with live high-capacity lithium-ion battery pack during charge-discharge cycling; (11) development of special polymer-gel lithium-ion batteries with embedded temperature sensors, capable of measuring the core temperature of individual of the cells during charge

  1. Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer.

    PubMed

    Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

    2017-03-08

    Crystalline ZrTiO 4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF 4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N 2 O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 10 5 program/erase cycles and 81.8% charge retention after 10 4  sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

  2. Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

    PubMed

    Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

    2013-09-15

      One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

  3. Design and Laboratory Testing of a Prototype Linear Temperature Sensor

    DTIC Science & Technology

    1982-07-01

    computer, critical quantities such as the line sensors voltage, vertical position and, occasionally, a point sensor were also monitored in real time on a...REUT.............. ........... * 30 5.1 Linearity - Comparison With Thoy............... 31 5.2 Response Time ...from some initial time t 0 is more relevant to the measurement of internal waves (since the second term in 0 the above equation is usually small

  4. Depolarization of the conductance-voltage relationship in the NaV1.5 mutant, E1784K, is due to altered fast inactivation

    PubMed Central

    Yu, Alec; Zhu, Wandi; Silva, Jonathan R.; Ruben, Peter C.

    2017-01-01

    E1784K is the most common mixed long QT syndrome/Brugada syndrome mutant in the cardiac voltage-gated sodium channel NaV1.5. E1784K shifts the midpoint of the channel conductance-voltage relationship to more depolarized membrane potentials and accelerates the rate of channel fast inactivation. The depolarizing shift in the midpoint of the conductance curve in E1784K is exacerbated by low extracellular pH. We tested whether the E1784K mutant shifts the channel conductance curve to more depolarized membrane potentials by affecting the channel voltage-sensors. We measured ionic currents and gating currents at pH 7.4 and pH 6.0 in Xenopus laevis oocytes. Contrary to our expectation, the movement of gating charges is shifted to more hyperpolarized membrane potentials by E1784K. Voltage-clamp fluorimetry experiments show that this gating charge shift is due to the movement of the DIVS4 voltage-sensor being shifted to more hyperpolarized membrane potentials. Using a model and experiments on fast inactivation-deficient channels, we show that changes to the rate and voltage-dependence of fast inactivation are sufficient to shift the conductance curve in E1784K. Our results localize the effects of E1784K to DIVS4, and provide novel insight into the role of the DIV-VSD in regulating the voltage-dependencies of activation and fast inactivation. PMID:28898267

  5. The isolated voltage sensing domain of the Shaker potassium channel forms a voltage-gated cation channel

    PubMed Central

    Zhao, Juan; Blunck, Rikard

    2016-01-01

    Domains in macromolecular complexes are often considered structurally and functionally conserved while energetically coupled to each other. In the modular voltage-gated ion channels the central ion-conducting pore is surrounded by four voltage sensing domains (VSDs). Here, the energetic coupling is mediated by interactions between the S4-S5 linker, covalently linking the domains, and the proximal C-terminus. In order to characterize the intrinsic gating of the voltage sensing domain in the absence of the pore domain, the Shaker Kv channel was truncated after the fourth transmembrane helix S4 (Shaker-iVSD). Shaker-iVSD showed significantly altered gating kinetics and formed a cation-selective ion channel with a strong preference for protons. Ion conduction in Shaker-iVSD developed despite identical primary sequence, indicating an allosteric influence of the pore domain. Shaker-iVSD also displays pronounced 'relaxation'. Closing of the pore correlates with entry into relaxation suggesting that the two processes are energetically related. DOI: http://dx.doi.org/10.7554/eLife.18130.001 PMID:27710769

  6. Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

    PubMed

    Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

    2017-08-29

    Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

  7. Voltage-gated calcium flux mediates Escherichia coli mechanosensation

    PubMed Central

    Weekley, R. Andrew; Dodd, Benjamin J. T.

    2017-01-01

    Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli, including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings. PMID:28808010

  8. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    NASA Technical Reports Server (NTRS)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  9. Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator

    PubMed Central

    Jung, Arong; Rajakumar, Dhanarajan; Yoon, Bong-June

    2017-01-01

    Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition. PMID:29093633

  10. Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator.

    PubMed

    Jung, Arong; Rajakumar, Dhanarajan; Yoon, Bong-June; Baker, Bradley J

    2017-10-01

    Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

  11. Location of the β4 transmembrane helices in the BK potassium channel

    PubMed Central

    Wu, Roland S.; Chudasama, Neelesh; Zakharov, Sergey I.; Doshi, Darshan; Motoike, Howard; Liu, Guoxia; Yao, Yongneng; Niu, Xiaowei; Deng, Shi-Xian; Landry, Donald W.; Karlin, Arthur; Marx, Steven O.

    2009-01-01

    Large-conductance, voltage- and Ca2+-gated potassium (BK) channels control excitability in a number of cell types. BK channels are composed of α subunits, which contain the voltage-sensor domains and the Ca2+- sensor domains, and form the pore, and often one of four types of β subunits, which modulate the channel in a cell-specific manner. β4 is expressed in neurons throughout the brain. Deletion of β4 in mice causes temporal lobe epilepsy. Compared to channels composed of α alone, channels composed of α and β4 activate and deactivate more slowly. We inferred the locations of the two β4 transmembrane (TM) helices, TM1 and TM2, relative to the seven αTM helices, S0-S6, from the extent of disulfide bond formation between cysteines substituted in the extracellular flanks of these TM helices. We found that β4 TM2 is close to α S0 and that β4 TM1 is close to both α S1 and S2. At least at their extracellular ends, TM1 and TM2 are not close to S3 through S6. In six of eight of the most highly crosslinked cysteine pairs, four crosslinks from TM2 to S0 and one each from TM1 to S1 and S2 had small effects on the V50 and on the rates of activation and deactivation. That disulfide crosslinking caused only small functional perturbations is consistent with the proximity of the extracellular ends of TM2 to S0 and of TM1 to S1 and to S2, in both the open and closed states. PMID:19571123

  12. Wearable sensors objectively measure gait parameters in Parkinson’s disease

    PubMed Central

    Marxreiter, Franz; Gossler, Julia; Kohl, Zacharias; Reinfelder, Samuel; Gassner, Heiko; Aminian, Kamiar; Eskofier, Bjoern M.; Winkler, Jürgen; Klucken, Jochen

    2017-01-01

    Distinct gait characteristics like short steps and shuffling gait are prototypical signs commonly observed in Parkinson’s disease. Routinely assessed by observation through clinicians, gait is rated as part of categorical clinical scores. There is an increasing need to provide quantitative measurements of gait, e.g. to provide detailed information about disease progression. Recently, we developed a wearable sensor-based gait analysis system as diagnostic tool that objectively assesses gait parameter in Parkinson’s disease without the need of having a specialized gait laboratory. This system consists of inertial sensor units attached laterally to both shoes. The computed target of measures are spatiotemporal gait parameters including stride length and time, stance phase time, heel-strike and toe-off angle, toe clearance, and inter-stride variation from gait sequences. To translate this prototype into medical care, we conducted a cross-sectional study including 190 Parkinson’s disease patients and 101 age-matched controls and measured gait characteristics during a 4x10 meter walk at the subjects’ preferred speed. To determine intraindividual changes in gait, we monitored the gait characteristics of 63 patients longitudinally. Cross-sectional analysis revealed distinct spatiotemporal gait parameter differences reflecting typical Parkinson’s disease gait characteristics including short steps, shuffling gait, and postural instability specific for different disease stages and levels of motor impairment. The longitudinal analysis revealed that gait parameters were sensitive to changes by mirroring the progressive nature of Parkinson’s disease and corresponded to physician ratings. Taken together, we successfully show that wearable sensor-based gait analysis reaches clinical applicability providing a high biomechanical resolution for gait impairment in Parkinson’s disease. These data demonstrate the feasibility and applicability of objective wearable sensor

  13. E-beam high voltage switching power supply

    DOEpatents

    Shimer, D.W.; Lange, A.C.

    1996-10-15

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 figs.

  14. E-beam high voltage switching power supply

    DOEpatents

    Shimer, Daniel W.; Lange, Arnold C.

    1996-01-01

    A high-power power supply produces a controllable, constant high voltage put under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  15. 0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems

    PubMed Central

    Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

    2015-01-01

    This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics. PMID:26343681

  16. 0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

    PubMed

    Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

    2015-08-28

    This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

  17. Elevated voltage level I{sub DDQ} failure testing of integrated circuits

    DOEpatents

    Righter, A.W.

    1996-05-21

    Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

  18. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

    PubMed

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-10-20

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

  19. Hydrophobic interaction between contiguous residues in the S6 transmembrane segment acts as a stimuli integration node in the BK channel

    PubMed Central

    Carrasquel-Ursulaez, Willy; Contreras, Gustavo F.; Sepúlveda, Romina V.; Aguayo, Daniel; González-Nilo, Fernando

    2015-01-01

    Large-conductance Ca2+- and voltage-activated K+ channel (BK) open probability is enhanced by depolarization, increasing Ca2+ concentration, or both. These stimuli activate modular voltage and Ca2+ sensors that are allosterically coupled to channel gating. Here, we report a point mutation of a phenylalanine (F380A) in the S6 transmembrane helix that, in the absence of internal Ca2+, profoundly hinders channel opening while showing only minor effects on the voltage sensor active–resting equilibrium. Interpretation of these results using an allosteric model suggests that the F380A mutation greatly increases the free energy difference between open and closed states and uncouples Ca2+ binding from voltage sensor activation and voltage sensor activation from channel opening. However, the presence of a bulky and more hydrophobic amino acid in the F380 position (F380W) increases the intrinsic open–closed equilibrium, weakening the coupling between both sensors with the pore domain. Based on these functional experiments and molecular dynamics simulations, we propose that F380 interacts with another S6 hydrophobic residue (L377) in contiguous subunits. This pair forms a hydrophobic ring important in determining the open–closed equilibrium and, like an integration node, participates in the communication between sensors and between the sensors and pore. Moreover, because of its effects on open probabilities, the F380A mutant can be used for detailed voltage sensor experiments in the presence of permeant cations. PMID:25548136

  20. Structural refinement of the hERG1 pore and voltage-sensing domains with ROSETTA-membrane and molecular dynamics simulations.

    PubMed

    Subbotina, Julia; Yarov-Yarovoy, Vladimir; Lees-Miller, James; Durdagi, Serdar; Guo, Jiqing; Duff, Henry J; Noskov, Sergei Yu

    2010-11-01

    The hERG1 gene (Kv11.1) encodes a voltage-gated potassium channel. Mutations in this gene lead to one form of the Long QT Syndrome (LQTS) in humans. Promiscuous binding of drugs to hERG1 is known to alter the structure/function of the channel leading to an acquired form of the LQTS. Expectably, creation and validation of reliable 3D model of the channel have been a key target in molecular cardiology and pharmacology for the last decade. Although many models were built, they all were limited to pore domain. In this work, a full model of the hERG1 channel is developed which includes all transmembrane segments. We tested a template-driven de-novo design with ROSETTA-membrane modeling using side-chain placements optimized by subsequent molecular dynamics (MD) simulations. Although backbone templates for the homology modeled parts of the pore and voltage sensors were based on the available structures of KvAP, Kv1.2 and Kv1.2-Kv2.1 chimera channels, the missing parts are modeled de-novo. The impact of several alignments on the structure of the S4 helix in the voltage-sensing domain was also tested. Herein, final models are evaluated for consistency to the reported structural elements discovered mainly on the basis of mutagenesis and electrophysiology. These structural elements include salt bridges and close contacts in the voltage-sensor domain; and the topology of the extracellular S5-pore linker compared with that established by toxin foot-printing and nuclear magnetic resonance studies. Implications of the refined hERG1 model to binding of blockers and channels activators (potent new ligands for channel activations) are discussed. © 2010 Wiley-Liss, Inc.

  1. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    PubMed Central

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  2. A CMOS humidity sensor for passive RFID sensing applications.

    PubMed

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-05-16

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  3. Sensor Exposure, Exploitation, and Experimentation Environment (SE4)

    NASA Astrophysics Data System (ADS)

    Buell, D.; Duff, F.; Goding, J.; Bankston, M.; McLaughlin, T.; Six, S.; Taylor, S.; Wootton, S.

    2011-09-01

    As the resident space object population increases from new launches and events such as the COSMOS/IRIDIUM collision, the maintenance of high-level Space Situational Awareness (SSA) has become increasingly difficult. To maintain situational awareness of the changing environment, new systems and methods must be developed. The Sensor Exposure, Exploitation and Experimentation Environment (SE4) provides a platform to illustrate “The Art of the Possible” that shows the potential benefit of enriched sensor data collections and real-time data sharing. Through modeling and simulation, and a net-centric architecture, SE4 shows the added value of sharing data in real-time and exposing new types of sensor data. The objective of SE4 is to develop an experimentation and innovation environment for sensor data exposure, composable sensor capabilities, reuse, and exploitation that accelerates the delivery of needed Command and Control, Intelligence, Surveillance, and Reconnaissance capabilities to the warfighter. Through modeling, simulation and rapid prototyping, the art of the possible for a fully-connected, net-centric space Command and Control (C2) and sensor enterprise can be demonstrated. This paper provides results that demonstrate the potential for faster cataloging of breakup events and additional event monitoring that are possible with data available today in the Space Surveillance Network (SSN). Demonstrating the art of the possible for the enterprise will guide net-centric requirements definition and facilitate discussions with stakeholder organizations on the Concept of Operations (CONOPS), policy, and Tactics, Techniques, and Procedures (TTP) evolution necessary to take full advantage of net-centric operations. SE4 aligns with direction from Secretary Gates and the Chairman Joint Chief of Staff that emphasizes the need to get the most out of our existing systems. Continuing to utilize SE4 will enable the enterprise by demonstrating the benefits of applying

  4. Action Potential Dynamics in Fine Axons Probed with an Axonally Targeted Optical Voltage Sensor.

    PubMed

    Ma, Yihe; Bayguinov, Peter O; Jackson, Meyer B

    2017-01-01

    The complex and malleable conduction properties of axons determine how action potentials propagate through extensive axonal arbors to reach synaptic terminals. The excitability of axonal membranes plays a major role in neural circuit function, but because most axons are too thin for conventional electrical recording, their properties remain largely unexplored. To overcome this obstacle, we used a genetically encoded hybrid voltage sensor (hVOS) harboring an axonal targeting motif. Expressing this probe in transgenic mice enabled us to monitor voltage changes optically in two populations of axons in hippocampal slices, the large axons of dentate granule cells (mossy fibers) in the stratum lucidum of the CA3 region and the much finer axons of hilar mossy cells in the inner molecular layer of the dentate gyrus. Action potentials propagated with distinct velocities in each type of axon. Repetitive firing broadened action potentials in both populations, but at an intermediate frequency the degree of broadening differed. Repetitive firing also attenuated action potential amplitudes in both mossy cell and granule cell axons. These results indicate that the features of use-dependent action potential broadening, and possible failure, observed previously in large nerve terminals also appear in much finer unmyelinated axons. Subtle differences in the frequency dependences could influence the propagation of activity through different pathways to excite different populations of neurons. The axonally targeted hVOS probe used here opens up the diverse repertoire of neuronal processes to detailed biophysical study.

  5. Expression of the voltage-sensing phosphatase gene in the chick embryonic tissues and in the adult cerebellum.

    PubMed

    Yamaguchi, Shinji; Aoki, Naoya; Kitajima, Takaaki; Okamura, Yasushi; Homma, Koichi J

    2014-10-01

    Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor domain (VSD) and the cytoplasmic domain with phosphoinositide-phosphatase activities. It operates as the voltage sensor and directly translates membrane potential into phosphoinositide turnover by coupling VSD to the cytoplasmic domain. VSPs are evolutionarily conserved from marine invertebrate up to humans. Recently, we demonstrated that ectopic expression of the chick ortholog of VSP, Gg-VSP, in a fibroblast cell line caused characteristic cell process outgrowths. Co-expression of chick PTEN suppressed such morphological change, suggesting that VSP regulates cell shape by increasing PI(3,4)P2. However, the in vivo function of Gg-VSP remains unclear. Here, we showed that in chick embryos Gg-VSP is expressed in the stomach, mesonephros, pharyngeal arch, limb bud, somites, floor plate of neural tube, and notochord. In addition, both Gg-VSP transcripts and the protein were found in the cerebellar Purkinje neurons. These findings provide an insight into the physiological functions of VSP.

  6. Hybrid optical-fibre/geopolymer sensors for structural health monitoring of concrete structures

    NASA Astrophysics Data System (ADS)

    Perry, M.; Saafi, M.; Fusiek, G.; Niewczas, P.

    2015-04-01

    In this work, we demonstrate hybrid optical-fibre/geopolymer sensors for monitoring temperature, uniaxial strain and biaxial strain in concrete structures. The hybrid sensors detect these measurands via changes in geopolymer electrical impedance, and via optical wavelength measurements of embedded fibre Bragg gratings. Electrical and optical measurements were both facilitated by metal-coated optical fibres, which provided the hybrid sensors with a single, shared physical path for both voltage and wavelength signals. The embedded fibre sensors revealed that geopolymer specimens undergo 2.7 mɛ of shrinkage after one week of curing at 42 °C. After curing, an axial 2 mɛ compression of the uniaxial hybrid sensor led to impedance and wavelength shifts of 7 × 10-2 and -2 × 10-4 respectively. The typical strain resolution in the uniaxial sensor was 100 μ \\varepsilon . The biaxial sensor was applied to the side of a concrete cylinder, which was then placed under 0.6 mɛ of axial, compressive strain. Fractional shifts in impedance and wavelength, used to monitor axial and circumferential strain, were 3 × 10-2 and 4 × 10-5 respectively. The biaxial sensor’s strain resolution was approximately 10 μ \\varepsilon in both directions. Due to several design flaws, the uniaxial hybrid sensor was unable to accurately measure ambient temperature changes. The biaxial sensor, however, successfully monitored local temperature changes with 0.5 °C resolution.

  7. Phase-Discriminating Capacitive Sensor System

    NASA Technical Reports Server (NTRS)

    Vranish, John M.; Rahim, Wadi

    1993-01-01

    Crosstalk eliminated by maintaining voltages on all electrodes at same amplitude, phase, and frequency. Each output feedback-derived control voltage, change of which indicates proximity-induced change in capacitance of associated sensing electrode. Sensors placed close together, enabling imaging of sort. Images and/or output voltages used to guide robots in proximity to various objects.

  8. A Power-Frequency Electric Field Sensor for Portable Measurement

    PubMed Central

    Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi

    2018-01-01

    In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested. PMID:29614753

  9. A Power-Frequency Electric Field Sensor for Portable Measurement.

    PubMed

    Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi; Zhang, Zhanlong

    2018-03-31

    In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested.

  10. Optical Voltage Sensing Using DNA Origami

    PubMed Central

    2018-01-01

    We explore the potential of DNA nanotechnology for developing novel optical voltage sensing nanodevices that convert a local change of electric potential into optical signals. As a proof-of-concept of the sensing mechanism, we assembled voltage responsive DNA origami structures labeled with a single pair of FRET dyes. The DNA structures were reversibly immobilized on a nanocapillary tip and underwent controlled structural changes upon application of an electric field. The applied field was monitored through a change in FRET efficiency. By exchanging the position of a single dye, we could tune the voltage sensitivity of our DNA origami structure, demonstrating the flexibility and versatility of our approach. The experimental studies were complemented by coarse-grained simulations that characterized voltage-dependent elastic deformation of the DNA nanostructures and the associated change in the distance between the FRET pair. Our work opens a novel pathway for determining the mechanical properties of DNA origami structures and highlights potential applications of dynamic DNA nanostructures as voltage sensors. PMID:29430924

  11. A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

    NASA Astrophysics Data System (ADS)

    Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

    2014-01-01

    This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

  12. Color regeneration from reflective color sensor using an artificial intelligent technique.

    PubMed

    Saracoglu, Ömer Galip; Altural, Hayriye

    2010-01-01

    A low-cost optical sensor based on reflective color sensing is presented. Artificial neural network models are used to improve the color regeneration from the sensor signals. Analog voltages of the sensor are successfully converted to RGB colors. The artificial intelligent models presented in this work enable color regeneration from analog outputs of the color sensor. Besides, inverse modeling supported by an intelligent technique enables the sensor probe for use of a colorimetric sensor that relates color changes to analog voltages.

  13. Transduction of Voltage and Ca2+ Signals by Slo1 BK Channels

    PubMed Central

    Hoshi, T.; Pantazis, A.; Olcese, R.

    2013-01-01

    Large-conductance Ca2+- and voltage-gated K+ channels are activated by an increase in intracellular Ca2+ concentration and/or depolarization. The channel activation mechanism is well described by an allosteric model encompassing the gate, voltage sensors, and Ca2+ sensors, and the model is an excellent framework to understand the influences of auxiliary β and γ subunits and regulatory factors such as Mg2+. Recent advances permit elucidation of structural correlates of the biophysical mechanism. PMID:23636263

  14. The orientation and molecular movement of a k(+) channel voltage-sensing domain.

    PubMed

    Gandhi, Chris S; Clark, Eliana; Loots, Eli; Pralle, Arnd; Isacoff, Ehud Y

    2003-10-30

    Voltage-gated channels operate through the action of a voltage-sensing domain (membrane segments S1-S4) that controls the conformation of gates located in the pore domain (membrane segments S5-S6). Recent structural studies on the bacterial K(v)AP potassium channel have led to a new model of voltage sensing in which S4 lies in the lipid at the channel periphery and moves through the membrane as a unit with a portion of S3. Here we describe accessibility probing and disulfide scanning experiments aimed at determining how well the K(v)AP model describes the Drosophila Shaker potassium channel. We find that the S1-S3 helices have one end that is externally exposed, S3 does not undergo a transmembrane motion, and S4 lies in close apposition to the pore domain in the resting and activated state.

  15. Charge immobilization of the voltage sensor in domain IV is independent of sodium current inactivation.

    PubMed

    Sheets, Michael F; Hanck, Dorothy A

    2005-02-15

    Recovery from fast inactivation in voltage-dependent Na+ channels is associated with a slow component in the time course of gating charge during repolarization (i.e. charge immobilization), which results from the slow movement of the S4 segments in domains III and IV (S4-DIII and S4-DIV). Previous studies have shown that the non-specific removal of fast inactivation by the proteolytic enzyme pronase eliminated charge immobilization, while the specific removal of fast inactivation (by intracellular MTSET modification of a cysteine substituted for the phenylalanine in the IFM motif, ICMMTSET, in the inactivation particle formed by the linker between domains III and IV) only reduced the amount of charge immobilization by nearly one-half. To investigate the molecular origin of the remaining slow component of charge immobilization we studied the human cardiac Na+ channel (hH1a) in which the outermost arginine in the S4-DIV, which contributes approximately 20% to total gating charge (Qmax), was mutated to a cysteine (R1C-DIV). Gating charge could be fully restored in R1C-DIV by exposure to extracellular MTSEA, a positively charged methanethiosulphonate reagent. The RIC-DIV mutation was combined with ICMMTSET to remove fast inactivation, and the gating currents of R1C-DIV-ICM(MTSET) were recorded before and after modification with MTSEAo. Prior to MTSEAo, the time course of the gating charge during repolarization (off-charge) was best described by a single fast time constant. After MTSEA, the off-charge had both fast and slow components, with the slow component accounting for nearly 35% of Qmax. These results demonstrate that the slow movement of the S4-DIV during repolarization is not dependent upon the normal binding of the inactivation particle.

  16. Two-channel highly sensitive sensors based on 4 × 4 multimode interference couplers

    NASA Astrophysics Data System (ADS)

    Le, Trung-Thanh

    2017-12-01

    We propose a new kind of microring resonators (MRR) based on 4 × 4 multimode interference (MMI) couplers for multichannel and highly sensitive chemical and biological sensors. The proposed sensor structure has advantages of compactness and high sensitivity compared with the reported sensing structures. By using the transfer matrix method (TMM) and numerical simulations, the designs of the sensor based on silicon waveguides are optimized and demonstrated in detail. We apply our structure to detect glucose and ethanol concentrations simultaneously. A high sensitivity of 9000 nm/RIU, detection limit of 2 × 10‒4 for glucose sensing and sensitivity of 6000 nm/RIU, detection limit of 1.3 × 10‒5 for ethanol sensing are achieved.

  17. Low-Cost Linear Optical Sensors.

    ERIC Educational Resources Information Center

    Kinsey, Kenneth F.; Meisel, David D.

    1994-01-01

    Discusses the properties and application of three light-to-voltage optical sensors. The sensors have been used for sensing diffraction patterns, the inverse-square law, and as a fringe counter with an interferometer. (MVL)

  18. Substitutions in the domain III voltage-sensing module enhance the sensitivity of an insect sodium channel to a scorpion beta-toxin.

    PubMed

    Song, Weizhong; Du, Yuzhe; Liu, Zhiqi; Luo, Ningguang; Turkov, Michael; Gordon, Dalia; Gurevitz, Michael; Goldin, Alan L; Dong, Ke

    2011-05-06

    Scorpion β-toxins bind to the extracellular regions of the voltage-sensing module of domain II and to the pore module of domain III in voltage-gated sodium channels and enhance channel activation by trapping and stabilizing the voltage sensor of domain II in its activated state. We investigated the interaction of a highly potent insect-selective scorpion depressant β-toxin, Lqh-dprIT(3), from Leiurus quinquestriatus hebraeus with insect sodium channels from Blattella germanica (BgNa(v)). Like other scorpion β-toxins, Lqh-dprIT(3) shifts the voltage dependence of activation of BgNa(v) channels expressed in Xenopus oocytes to more negative membrane potentials but only after strong depolarizing prepulses. Notably, among 10 BgNa(v) splice variants tested for their sensitivity to the toxin, only BgNa(v)1-1 was hypersensitive due to an L1285P substitution in IIIS1 resulting from a U-to-C RNA-editing event. Furthermore, charge reversal of a negatively charged residue (E1290K) at the extracellular end of IIIS1 and the two innermost positively charged residues (R4E and R5E) in IIIS4 also increased the channel sensitivity to Lqh-dprIT(3). Besides enhancement of toxin sensitivity, the R4E substitution caused an additional 20-mV negative shift in the voltage dependence of activation of toxin-modified channels, inducing a unique toxin-modified state. Our findings provide the first direct evidence for the involvement of the domain III voltage-sensing module in the action of scorpion β-toxins. This hypersensitivity most likely reflects an increase in IIS4 trapping via allosteric mechanisms, suggesting coupling between the voltage sensors in neighboring domains during channel activation.

  19. Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

    NASA Astrophysics Data System (ADS)

    Shen, Yung-Shao; Chen, Kuen-Yi; Chen, Po-Chun; Chen, Teng-Chuan; Wu, Yung-Hsien

    2017-03-01

    Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatment, charge storage is still not improved even though incorporated F atoms could introduce additional traps since the F atoms disappear during the subsequent thermal annealing. On the contrary, nevertheless the k value degrades to 40.8, N2O plasma-treated ZTO shows promising performance in terms of 5-V hysteresis memory window by ±7-V sweeping voltage, 2.8-V flatband voltage shift by programming at +7 V for 100 μs, negligible memory window degradation with 105 program/erase cycles and 81.8% charge retention after 104 sec at 125 °C. These desirable characteristics are ascribed not only to passivation of oxygen vacancies-related shallow-level traps but to introduction of a large amount of deep-level bulk charge traps which have been proven by confirming thermally excited process as the charge loss mechanism and identifying traps located at energy level beneath ZTO conduction band by 0.84 eV~1.03 eV.

  20. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment

    PubMed Central

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-01-01

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density. PMID:27775627

  1. Aurelia aurita bio-inspired tilt sensor

    NASA Astrophysics Data System (ADS)

    Smith, Colin; Villanueva, Alex; Priya, Shashank

    2012-10-01

    The quickly expanding field of mobile robots, unmanned underwater vehicles, and micro-air vehicles urgently needs a cheap and effective means for measuring vehicle inclination. Commonly, tilt or inclination has been mathematically derived from accelerometers; however, there is inherent error in any indirect measurement. This paper reports a bio-inspired tilt sensor that mimics the natural balance organ of jellyfish, called the ‘statocyst’. Biological statocysts from the species Aurelia aurita were characterized by scanning electron microscopy to investigate the morphology and size of the natural sensor. An artificial tilt sensor was then developed by using printed electronics that incorporates a novel voltage divider concept in conjunction with small surface mount devices. This sensor was found to have minimum sensitivity of 4.21° with a standard deviation of 1.77°. These results open the possibility of developing elegant tilt sensor architecture for both air and water based platforms.

  2. Molecular mechanism underlying β1 regulation in voltage- and calcium-activated potassium (BK) channels

    PubMed Central

    Castillo, Karen; Contreras, Gustavo F.; Pupo, Amaury; Torres, Yolima P.; Neely, Alan; González, Carlos; Latorre, Ramon

    2015-01-01

    Being activated by depolarizing voltages and increases in cytoplasmic Ca2+, voltage- and calcium-activated potassium (BK) channels and their modulatory β-subunits are able to dampen or stop excitatory stimuli in a wide range of cellular types, including both neuronal and nonneuronal tissues. Minimal alterations in BK channel function may contribute to the pathophysiology of several diseases, including hypertension, asthma, cancer, epilepsy, and diabetes. Several gating processes, allosterically coupled to each other, control BK channel activity and are potential targets for regulation by auxiliary β-subunits that are expressed together with the α (BK)-subunit in almost every tissue type where they are found. By measuring gating currents in BK channels coexpressed with chimeras between β1 and β3 or β2 auxiliary subunits, we were able to identify that the cytoplasmic regions of β1 are responsible for the modulation of the voltage sensors. In addition, we narrowed down the structural determinants to the N terminus of β1, which contains two lysine residues (i.e., K3 and K4), which upon substitution virtually abolished the effects of β1 on charge movement. The mechanism by which K3 and K4 stabilize the voltage sensor is not electrostatic but specific, and the α (BK)-residues involved remain to be identified. This is the first report, to our knowledge, where the regulatory effects of the β1-subunit have been clearly assigned to a particular segment, with two pivotal amino acids being responsible for this modulation. PMID:25825713

  3. Bromodomain-containing Protein 4 Activates Voltage-gated Sodium Channel 1.7 Transcription in Dorsal Root Ganglia Neurons to Mediate Thermal Hyperalgesia in Rats.

    PubMed

    Hsieh, Ming-Chun; Ho, Yu-Cheng; Lai, Cheng-Yuan; Wang, Hsueh-Hsiao; Lee, An-Sheng; Cheng, Jen-Kun; Chau, Yat-Pang; Peng, Hsien-Yu

    2017-11-01

    Bromodomain-containing protein 4 binds acetylated promoter histones and promotes transcription; however, the role of bromodomain-containing protein 4 in inflammatory hyperalgesia remains unclear. Male Sprague-Dawley rats received hind paw injections of complete Freund's adjuvant to induce hyperalgesia. The dorsal root ganglia were examined to detect changes in bromodomain-containing protein 4 expression and the activation of genes involved in the expression of voltage-gated sodium channel 1.7, which is a key pain-related ion channel. The intraplantar complete Freund's adjuvant injections resulted in thermal hyperalgesia (4.0 ± 1.5 s; n = 7). The immunohistochemistry and immunoblotting results demonstrated an increase in the bromodomain-containing protein 4-expressing dorsal root ganglia neurons (3.78 ± 0.38 fold; n = 7) and bromodomain-containing protein 4 protein levels (2.62 ± 0.39 fold; n = 6). After the complete Freund's adjuvant injection, histone H3 protein acetylation was enhanced in the voltage-gated sodium channel 1.7 promoter, and cyclin-dependent kinase 9 and phosphorylation of RNA polymerase II were recruited to this area. Furthermore, the voltage-gated sodium channel 1.7-mediated currents were enhanced in neurons of the complete Freund's adjuvant rats (55 ± 11 vs. 19 ± 9 pA/pF; n = 4 to 6 neurons). Using bromodomain-containing protein 4-targeted antisense small interfering RNA to the complete Freund's adjuvant-treated rats, the authors demonstrated a reduction in the expression of bromodomain-containing protein 4 (0.68 ± 0.16 fold; n = 7), a reduction in thermal hyperalgesia (7.5 ± 1.5 s; n = 7), and a reduction in the increased voltage-gated sodium channel 1.7 currents (21 ± 4 pA/pF; n = 4 to 6 neurons). Complete Freund's adjuvant triggers enhanced bromodomain-containing protein 4 expression, ultimately leading to the enhanced excitability of nociceptive neurons and thermal hyperalgesia. This effect is

  4. Design and Implementation of Readout Circuit with Threshold Voltage Compensation on Glass Substrate for Touch Panel Applications

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Ta; Ker, Ming-Dou; Wang, Tzu-Ming

    2011-03-01

    A new on-panel readout circuit with threshold voltage compensation for capacitive sensor in low temperature polycrystalline silicon (poly-Si) thin-film transistor (LTPS-TFT) process has been proposed. In order to compensate the threshold voltage variation from LTPS process variation, the proposed readout circuit applies a novel compensation approach with switch capacitor technique. In addition, a 4-bit analog-to-digital converter (ADC) is added to identify different sensed capacitor values and further enhances the overall resolution of touch panel.

  5. Plastic Optical Fibre Sensor for Spine Bending Monitoring with Power Fluctuation Compensation

    PubMed Central

    Zawawi, Mohd Anwar; O'Keeffe, Sinead; Lewis, Elfed

    2013-01-01

    This paper presents the implementation of power fluctuation compensation for an intensity-based optical fibre bending sensor aimed at monitoring human spine bending in a clinical environment. To compensate for the light intensity changes from the sensor light source, a reference signal was provided via the light reflection from an aluminum foil surface fixed at a certain distance from the source fibre end tips. From the results, it was found that the investigated sensor compensation technique was capable of achieving a 2° resolution for a bending angle working range between 0° and 20°. The study also suggested that the output voltage ratio has a 0.55% diversion due to input voltage variation between 2.9 V and 3.4 V and a 0.25% output drift for a 2 h measurement. With the achieved sensor properties, human spine monitoring in a clinical environment can potentially be implemented using this approach with power fluctuation compensation. PMID:24233073

  6. Strain Sensing Characteristics of Rubbery Carbon Nanotube Composite for Flexible Sensors.

    PubMed

    Choi, Gyong Rak; Park, Hyung-ki; Huh, Hoon; Kim, Young-Ju; Ham, Heon; Kim, Hyoun Woo; Lim, Kwon Taek; Kim, Sung Yong; Kang, Inpil

    2016-02-01

    In this study, the piezoresistive properties of CNT (Carbon Nanotube)/EPDM composite are characterized for the applications of a flexible sensor. The CNT/EPDM composites were prepared by using a Brabender mixer with MWCNT (Multi-walled Carbon Nanotube) and organoclay. The static and quasi-dynamic voltage output responses of the composite sensor were also experimentally studied and were compared with those of a conventional foil strain gage. The voltage output by using a signal processing system was fairly stable and it shows somehow linear responses at both of loading and unloading cases with hysteresis. The voltage output was distorted under a quasi-dynamic test due to its unsymmetrical piezoresistive characteristics. The CNT/EPDM sensor showed quite tardy response to its settling time test under static deflections and that would be a hurdle for its real time applications. Furthermore, since the CNT/EPDM sensor does not have directional voltage output to tension and compression, it only could be utilized as a mono-directional force sensor such as a compressive touch sensor.

  7. A Multi-Resolution Mode CMOS Image Sensor with a Novel Two-Step Single-Slope ADC for Intelligent Surveillance Systems.

    PubMed

    Kim, Daehyeok; Song, Minkyu; Choe, Byeongseong; Kim, Soo Youn

    2017-06-25

    In this paper, we present a multi-resolution mode CMOS image sensor (CIS) for intelligent surveillance system (ISS) applications. A low column fixed-pattern noise (CFPN) comparator is proposed in 8-bit two-step single-slope analog-to-digital converter (TSSS ADC) for the CIS that supports normal, 1/2, 1/4, 1/8, 1/16, 1/32, and 1/64 mode of pixel resolution. We show that the scaled-resolution images enable CIS to reduce total power consumption while images hold steady without events. A prototype sensor of 176 × 144 pixels has been fabricated with a 0.18 μm 1-poly 4-metal CMOS process. The area of 4-shared 4T-active pixel sensor (APS) is 4.4 μm × 4.4 μm and the total chip size is 2.35 mm × 2.35 mm. The maximum power consumption is 10 mW (with full resolution) with supply voltages of 3.3 V (analog) and 1.8 V (digital) and 14 frame/s of frame rates.

  8. Voltage-dependent gating and gating charge measurements in the Kv1.2 potassium channel

    PubMed Central

    Ishida, Itzel G.; Rangel-Yescas, Gisela E.; Carrasco-Zanini, Julia

    2015-01-01

    Much has been learned about the voltage sensors of ion channels since the x-ray structure of the mammalian voltage-gated potassium channel Kv1.2 was published in 2005. High resolution structural data of a Kv channel enabled the structural interpretation of numerous electrophysiological findings collected in various ion channels, most notably Shaker, and permitted the development of meticulous computational simulations of the activation mechanism. The fundamental premise for the structural interpretation of functional measurements from Shaker is that this channel and Kv1.2 have the same characteristics, such that correlation of data from both channels would be a trivial task. We tested these assumptions by measuring Kv1.2 voltage-dependent gating and charge per channel. We found that the Kv1.2 gating charge is near 10 elementary charges (eo), ∼25% less than the well-established 13–14 eo in Shaker. Next, we neutralized positive residues in the Kv1.2 S4 transmembrane segment to investigate the cause of the reduction of the gating charge and found that, whereas replacing R1 with glutamine decreased voltage sensitivity to ∼50% of the wild-type channel value, mutation of the subsequent arginines had a much smaller effect. These data are in marked contrast to the effects of charge neutralization in Shaker, where removal of the first four basic residues reduces the gating charge by roughly the same amount. In light of these differences, we propose that the voltage-sensing domains (VSDs) of Kv1.2 and Shaker might undergo the same physical movement, but the septum that separates the aqueous crevices in the VSD of Kv1.2 might be thicker than Shaker’s, accounting for the smaller Kv1.2 gating charge. PMID:25779871

  9. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    DOEpatents

    Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  10. A novel ethanol gas sensor-ZnS/ cyclohexylamine hybrid nanowires.

    PubMed

    Xu, Lin; Song, Hongwei; Zhang, Tong; Fan, Huitao; Fan, Libo; Wang, Yu; Dong, Biao; Bai, Xue

    2011-03-01

    We fabricated a novel ethanol gas sensor based on organic-inorganic ZnS/cyclohexylamine (CHA) nanowires via a solvothermal route. The sensor exhibited significantly better performance with response time of approximately 0.6 s and recovery time of approximately 10 s even under a low ethanol concentration and the high surface area, small nanofiber diameter, and hybrid nature made the ZnS/CHA nanowire gas sensor have high sensitivity to ethanol gas at a lower operating current of 160 mA. Moreover, the gas sensing mechanism was proposed on the basis of the two simultaneous steps to explain the adsorbing process due to the hybrid nature. This work indicates that the ZnS/CHA hybrid can be a novel candidate for the ethanol gas sensor with high performance.

  11. Radial displacement sensor for non-contact bearings

    NASA Technical Reports Server (NTRS)

    McCormick, John A. (Inventor); Sixsmith, Herbert (Inventor)

    1998-01-01

    A radial position sensor includes four capacitive electrodes oriented about a shaft, arranged in two diametrically opposite pairs. Sensor circuitry generates an output signal in proportion to the capacitance between the electrodes and the shaft; the capacitance between an electrode and the shaft increases as the shaft approaches the electrode and decreases as the shaft recedes from the electrode. The sensor circuitry applies an alternating voltage to one electrode of a pair and a 180 degree out of phase alternating voltage to the other electrode of the pair. The electrical responses of the two electrodes to their respective input signals are summed to form a radial deviation signal which is relatively free from the alternating voltage and accurately represents the position of the shaft relative to the electrodes of the pair.

  12. alpha-helical structural elements within the voltage-sensing domains of a K(+) channel.

    PubMed

    Li-Smerin, Y; Hackos, D H; Swartz, K J

    2000-01-01

    Voltage-gated K(+) channels are tetramers with each subunit containing six (S1-S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5-S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1-S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K(+) channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of alpha-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting alpha-helical secondary structure. In addition, both the S1-S2 and S3-S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain.

  13. Ultrasensitive and selective 4-aminophenol chemical sensor development based on nickel oxide nanoparticles decorated carbon nanotube nanocomposites for green environment.

    PubMed

    Hussain, Mohammad Musarraf; Rahman, Mohammed M; Asiri, Abdullah M

    2017-03-01

    Nickel oxide nanoparticles decorated carbon nanotube nanocomposites (NiO·CNT NCs) were prepared in a basic medium by using facile wet-chemical routes. The optical, morphological, and structural properties of NiO·CNT NCs were characterized using Fourier transformed infra-red (FT-IR), Ultra-violet visible (UV/Vis) spectroscopy, field-emission scanning electron microscopy (FESEM), X-ray energy dispersed spectroscopy (XEDS), X-ray photoelectron spectroscopy (XPS), and powder X-ray diffraction (XRD) methods. Selective 4-aminophenol (4-AP) chemical sensor was developed by a flat glassy carbon electrode (GCE, surface area: 0.0316cm 2 ) fabricated with a thin-layer of NCs. Electrochemical responses including higher sensitivity, large dynamic range (LDR), limit of detection (LOD), and long-term stability towards 4-AP were obtained using the fabricated chemical sensors. The calibration curve was found linear (R 2 =0.914) over a wide range of 4-AP concentration (0.1nmol/L-0.1mol/L). In perspective of slope (2×10 -5 μA/μM), LOD and sensitivity were calculated as 15.0±0.1pM and ~6.33×10 -4 μA/(μM·cm) respectively. The synthesized NiO·CNT NCs using a wet-chemical method is a significant route for the development of ultrasensitive and selective phenolic sensor based on nano-materials for environmental toxic substances. It is suggested that a pioneer and selective development of 4-AP sensitive sensor using NiO·CNT NCs by a facile and reliable current vs voltage (I-V) method for the major application of toxic agents in biological, green environmental, and health-care fields in near future. Copyright © 2016. Published by Elsevier B.V.

  14. A Complex Permittivity Based Sensor for the Electrical Characterization of High-Voltage Transformer Oils

    PubMed Central

    Dervos, Constantine T.; Paraskevas, Christos D.; Skafidas, Panayotis D.; Vassiliou, Panayota

    2005-01-01

    This work investigates the use of a specially designed cylindrical metal cell, in order to obtain complex permittivity and tanδ data of highly insulating High Voltage (HV) transformer oil samples. The data are obtained at a wide range of frequencies and operation temperatures to demonstrate the polarization phenomena and the thermally stimulated effects. Such complex permittivity measurements may be utilized as a criterion for the service life prediction of oil field electrical equipment (OFEE). Therefore, by one set of measurements on a small oil volume, data may be provided on the impending termination, or continuation of the transformer oil service life. The oil incorporating cell, attached to the appropriate measuring units, could be described as a complex permittivity sensor. In this work, the acquired dielectric data from a great number of operating distribution network power transformers were correlated to corresponding physicochemical ones to demonstrate the future potential employment of the proposed measuring technique.

  15. A flexible slip sensor using triboelectric nanogenerator approach

    NASA Astrophysics Data System (ADS)

    Wang, Xudong; Liang, Jiaming; Xiao, Yuxiang; Wu, Yichuan; Deng, Yang; Wang, Xiaohao; Zhang, Min

    2018-03-01

    With the rapid development of robotic technology, tactile sensors for robots have gained great attention from academic and industry researchers. Tactile sensors for slip detection are essential for human-like steady control in dexterous robot hand. In this paper, we propose and demonstrate a flexible slip sensor based on triboelectric nanogenerator with a seesaw structure. The sensor is composed of two porous PDMS layers separated by an inverted trapezoid structure with a height of 500 μm. In order to customize the sensitivity of the sensor, porous PDMS was fabricated by mixing PDMS with deionized water thoroughly and then removing water with heat. Laser-induced porous graphene and aluminium are served as the pair of contact materials. To detect slip from different directions, two sets of the electrode pair were used. Experimental results show a distinct difference between static state and the moment when a slip happens was detected. In addition, the output voltage of the sensors increased as the increase of slip velocity from 0.25 mm/s to 2.5 mm/s. The flexible slip sensor proposed here shows the potential applications in smart robotics and prosthesis.

  16. Uncooled tunneling infrared sensor

    NASA Technical Reports Server (NTRS)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  17. H2 S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode.

    PubMed

    Yassine, Omar; Shekhah, Osama; Assen, Ayalew H; Belmabkhout, Youssef; Salama, Khaled N; Eddaoudi, Mohamed

    2016-12-19

    Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H 2 S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the in situ growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H 2 S at concentrations down to 100 ppb, with the lower detection limit around 5 ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H 2 S vs. CH 4 , NO 2 , H 2 , and C 7 H 8 as well as an outstanding H 2 S sensing stability as compared to other reported MOFs. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Single flux quantum voltage amplifiers

    NASA Astrophysics Data System (ADS)

    Golomidov, Vladimir; Kaplunenko, Vsevolod; Khabipov, Marat; Koshelets, Valery; Kaplunenko, Olga

    The novel elements of the Rapid Single Flux Quantum (RSFQ) logic family — a Quasi Digital Voltage Parallel and Series Amplifiers (QDVA) have been computer simulated, designed and experimentally investigated. The Parallel QDVA consists of six stages and provides multiplication of the input voltage with factor five. The output resistance of the QDVA is five times larger than the input so this amplifier seems to be a good matching stage between RSFQL and usual semiconductor electronics. The series QDVA provides a gain factor four and involves two doublers connected by transmission line. The proposed parallel QDVA can be integrated on the same chip with a SQUID sensor.

  19. A MEMS SOI-based piezoresistive fluid flow sensor

    NASA Astrophysics Data System (ADS)

    Tian, B.; Li, H. F.; Yang, H.; Song, D. L.; Bai, X. W.; Zhao, Y. L.

    2018-02-01

    In this paper, a SOI (silicon-on-insulator)-based piezoresistive fluid flow sensor is presented; the presented flow sensor mainly consists of a nylon sensing head, stainless steel cantilever beam, SOI sensor chip, printed circuit board, half-cylinder gasket, and stainless steel shell. The working principle of the sensor and some detailed contrastive analysis about the sensor structure were introduced since the nylon sensing head and stainless steel cantilever beam have distinct influence on the sensor performance; the structure of nylon sensing head and stainless steel cantilever beam is also discussed. The SOI sensor chip was fabricated using micro-electromechanical systems technologies, such as reactive ion etching and low pressure chemical vapor deposition. The designed fluid sensor was packaged and tested; a calibration installation system was purposely designed for the sensor experiment. The testing results indicated that the output voltage of the sensor is proportional to the square of the fluid flow velocity, which is coincident with the theoretical derivation. The tested sensitivity of the sensor is 3.91 × 10-4 V ms2/kg.

  20. Fiber-optic sensors for aerospace electrical measurements: An update

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

    1991-01-01

    Fiber-optic sensors are being developed for electrical current, voltage, and power measurements in aerospace applications. These sensors are presently designed to cover ac frequencies from 60 Hz to 20 kHz. The current sensor, based on the Faraday effect in optical fiber, is in advanced development after some initial testing. Concentration is on packaging methods and ways to maintain consistent sensitivity with changes in temperature. The voltage sensor, utilizing the Pockels effect in a crystal, has excelled in temperature tests. This paper reports on the development of these sensors, the results of evaluation, improvements now in progress, and the future direction of the work.

  1. Humidity detection using chitosan film based sensor

    NASA Astrophysics Data System (ADS)

    Nasution, T. I.; Nainggolan, I.; Dalimunthe, D.; Balyan, M.; Cuana, R.; Khanifah, S.

    2018-02-01

    A humidity sensor made of the natural polymer chitosan has been successfully fabricated in the film form by a solution casting method. Humidity testing was performed by placing a chitosan film sensor in a cooling machine room, model KT-2000 Ahu. The testing results showed that the output voltage values of chitosan film sensor increased with the increase in humidity percentage. For the increase in humidity percentage from 30 to 90% showed that the output voltage of chitosan film sensor increased from 32.19 to 138.75 mV. It was also found that the sensor evidenced good repeatability and stability during the testing. Therefore, chitosan has a great potential to be used as new sensing material for the humidity detection of which was cheaper and environmentally friendly.

  2. A highly sensitive in-situ turbidity sensor with low power consumption

    NASA Astrophysics Data System (ADS)

    Hu, Yi; Sun, Lei; Ye, Shuming; Chen, Hang; Jiang, Kai; Pan, Jianming

    2014-03-01

    A highly sensitive in-situ turbidity sensor with the low power consumption was proposed and evaluated in this study. To meet the practical requirements of the in-situ detection, we have designed the light scattering path, watertight mechanical structure, and ultra-weak scattering light detecting method. Experiments showed that the sensor had a sensitivity of 0.0076 FTU with the concentration range of 0-25 FTU and the R-square of 0.9999. The sensor could withstand the water pressure in depth of 1000 m and had the low power consumption in the active mode 10.4 mA, sleep mode 65 μA with a supply voltage of 8.4 V. Southern China Sea buoy experiments indicated that the sensor could work well in the actual in-situ environment. In comparison with sensors of other companies, our sensor had relatively more comprehensive performance.

  3. A Monolithic Electrochemical Micro Seismic Sensor Capable of Monitoring Three-Dimensional Vibrations

    PubMed Central

    Chen, Lianhong; Sun, Zhenyuan; Li, Guanglei; Chen, Deyong; Wang, Junbo

    2018-01-01

    A monolithic electrochemical micro seismic sensor capable of monitoring three-axial vibrations was proposed in this paper. The proposed micro sensor mainly consisted of four sensing units interconnected within flow channels and by interpreting the voltage outputs of the sensing units, vibrations with arbitrary directions can be quantified. The proposed seismic sensors are fabricated based on MEMS technologies and characterized, which produced sensitivities along x, y, and z axes as 2473.2 ± 184.5 V/(m/s), 2261.7 ± 119.6 V/(m/s), and 3480.7 ± 417.2 V/(m/s) at 30 Hz. In addition, the vibrations in x-y, x-z, and y-z planes were applied to the developed seismic sensors, leading to comparable monitoring results after decoupling calculations with the input velocities. Furthermore, the results have shown its feasibilities for seismic data recording. PMID:29614720

  4. Thin-Layer Composite Unimorph Ferroelectric Driver Sensor Properties

    NASA Technical Reports Server (NTRS)

    Mossi, Karla M.; Selby, Gregory V.; Bryant, Robert G.

    1998-01-01

    Tests were conducted on 13 different configurations of a new class of piezoelectric devices called THUNDER (thin layer composite unimorph ferroelectric driver and sensor). These configurations consisted of a combination of 1, 3, 5, 7, and 9 layers of 25.4 micron thick aluminium as a backing material, with and without a top layer of 25.4 micrometer aluminum. All of these configurations used the same piezoelectric ceramic wafer (PZT-5A) with dimensions of 5.08 x 3.81 x 0.018 cm. The above configurations were tested at two stages of the manufacturing process: before and after repoling. The parameters measured included frequency, driving voltage. displacement, capacitance, and radius of curvature. An optic sensor recorded the displacement at a fixed voltage(100 - 400 V peak to peak) over a predetermined frequency range (1 - 1000 Hz). These displacement measurements were performed using a computer that controlled the process of activating and measuring the displacement of the device. A parameter alpha was defined which can be used to predict the which configuration will produce the most displacement for a free standing device.

  5. The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation.

    PubMed

    Williams, Steven E; Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark

    2017-09-01

    Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (4-4-4 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak-to-peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or <1 mV (22 ± 15%), and voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or <1 mV (13 ± 8%). Electrograms showing bipolar voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P < 0.001). There was a small but significant increase in conduction delay between unipole pairs at sites showing bipolar voltage attenuation (P = 0.026). Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. © 2017 The Authors. Journal of Cardiovascular Electrophysiology published by Wiley Periodicals, Inc.

  6. The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation

    PubMed Central

    Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A.; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark

    2017-01-01

    Abstract Introduction Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. Methods and results LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (444 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak‐to‐peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or <1 mV (22 ± 15%), and voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or <1 mV (13 ± 8%). Electrograms showing bipolar voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P < 0.001). There was a small but significant increase in conduction delay between unipole pairs at sites showing bipolar voltage attenuation (P = 0.026). Conclusions Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. PMID:28639747

  7. Review of adult electrical burn injury outcomes worldwide: An analysis of low- voltage versus high-voltage electrical injury

    PubMed Central

    Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

    2016-01-01

    Objective To review low-voltage versus high-voltage electrical burn complications in adults, and to identify novel areas that are not recognized to improve outcomes. Methods An extensive literature search on electrical burn injuries was performed using OVID Medline, PubMed and EMBASE databases from 1946–2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Results Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. 18.0% of these patients were low-voltage injuries (LVI), 38.3% high-voltage injuries (HVI) and 43.7% with voltage not otherwise specified (NOS). Forty-four percent of studies did not characterize outcomes according to low versus high-voltage injuries. Reported outcomes include surgical, medical, post-traumatic, and other (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI compared to LVI. Only two studies report on psychological outcomes such as post-traumatic stress disorder. Mortality from electrical injuries are 2.6% in LVI, 5.2% in HVI and 3.7% in NOS. Coroner’s reports reveal a ratio of 2.4:1 for deaths caused by low-voltage injury compared to high voltage-injury. Conclusions High-voltage injuries lead to greater morbidity and mortality than low-voltage injuries. However, the results of the coroner’s reports suggest that immediate mortality from low-voltage injury may be underestimated. Furthermore, based on the data of this analysis we conclude that the majority of studies report electrical injury outcomes, however, the majority of them do not analyze complications by low versus high voltage and often lack long-term psychological and rehabilitation outcomes post-electrical injury indicating that a variety of central aspects are not being evaluated or assessed. PMID:27359191

  8. Thermal effects of an ICL-based mid-infrared CH4 sensor within a wide atmospheric temperature range

    NASA Astrophysics Data System (ADS)

    Ye, Weilin; Zheng, Chuantao; Sanchez, Nancy P.; Girija, Aswathy V.; He, Qixin; Zheng, Huadan; Griffin, Robert J.; Tittel, Frank K.

    2018-03-01

    The thermal effects of an interband cascade laser (ICL) based mid-infrared methane (CH4) sensor that uses long-path absorption spectroscopy were studied. The sensor performance in the laboratory at a constant temperature of ∼25 °C was measured for 5 h and its Allan deviation was ∼2 ppbv with a 1 s averaging time. A LabVIEW-based simulation program was developed to study thermal effects on infrared absorption and a temperature compensation technique was developed to minimize these effects. An environmental test chamber was employed to investigate the thermal effects that occur in the sensor system with variation of the test chamber temperature between 10 and 30 °C. The thermal response of the sensor in a laboratory setting was observed using a 2.1 ppm CH4 standard gas sample. Indoor/outdoor CH4 measurements were conducted to evaluate the sensor performance within a wide atmospheric temperature range.

  9. Thermal effects of an ICL-based mid-infrared CH 4 sensor within a wide atmospheric temperature range

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ye, Weilin; Zheng, Chuantao; Sanchez, Nancy P.

    Here, thermal effects of an interband cascade laser (ICL) based mid-infrared methane (CH 4) sensor that uses long-path absorption spectroscopy were studied. The sensor performance in the laboratory at a constant temperature of ~ 25°C was measured for 5 hours and its Allan deviation was ~ 2 ppbv with a 1 s averaging time. A LabVIEW-based simulation program was developed to study thermal effects on infrared absorption and a temperature compensation technique was developed to control such effects. An environmental test chamber was employed to investigate thermal effects that occur in the sensor system with variation of the test chambermore » temperature between 10 and 30°C. The thermal response of the sensor in a laboratory setting was observed using a 2.1 ppm CH 4 standard gas sample. indoor/outdoor CH 4 measurements were conducted to evaluate the sensor performance within a wide atmospheric temperature range.« less

  10. Thermal effects of an ICL-based mid-infrared CH 4 sensor within a wide atmospheric temperature range

    DOE PAGES

    Ye, Weilin; Zheng, Chuantao; Sanchez, Nancy P.; ...

    2018-01-31

    Here, thermal effects of an interband cascade laser (ICL) based mid-infrared methane (CH 4) sensor that uses long-path absorption spectroscopy were studied. The sensor performance in the laboratory at a constant temperature of ~ 25°C was measured for 5 hours and its Allan deviation was ~ 2 ppbv with a 1 s averaging time. A LabVIEW-based simulation program was developed to study thermal effects on infrared absorption and a temperature compensation technique was developed to control such effects. An environmental test chamber was employed to investigate thermal effects that occur in the sensor system with variation of the test chambermore » temperature between 10 and 30°C. The thermal response of the sensor in a laboratory setting was observed using a 2.1 ppm CH 4 standard gas sample. indoor/outdoor CH 4 measurements were conducted to evaluate the sensor performance within a wide atmospheric temperature range.« less

  11. α-Helical Structural Elements within the Voltage-Sensing Domains of a K+ Channel

    PubMed Central

    Li-Smerin, Yingying; Hackos, David H.; Swartz, Kenton J.

    2000-01-01

    Voltage-gated K+ channels are tetramers with each subunit containing six (S1–S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5–S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1–S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K+ channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of α-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting α-helical secondary structure. In addition, both the S1–S2 and S3–S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain. PMID:10613917

  12. Treatment for GaSb surfaces using a sulphur blended (NH4)2S/(NH4)2SO4 solution

    NASA Astrophysics Data System (ADS)

    Murape, D. M.; Eassa, N.; Neethling, J. H.; Betz, R.; Coetsee, E.; Swart, H. C.; Botha, J. R.; Venter, A.

    2012-07-01

    A sulphur based chemical, [(NH4)2S/(NH4)2SO4] to which S has been added, not previously reported for the treatment of (1 0 0) n-GaSb surfaces, is introduced and benchmarked against the commonly used passivants Na2S·9H2O and (NH4)2S. The surfaces of the treated material were studied by scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It has been found that the native oxides present on the GaSb surface are more effectively removed when treated with ([(NH4)2S/(NH4)2SO4] + S) than with (NH4)2S or Na2S·9H2O, as evidenced by the ratio of the O506 eV to Sb457 eV AES peaks. XPS results reveal that Sb2S3/Sb2S5 "replaces" Sb2O3/Sb2O5, suggesting that sulphur atoms substitute oxygen atoms in Sb2O3/Sb2O5 to form Sbsbnd S. It seems sulphurization only partially removes Ga2O3. Treatment with ([(NH4)2S/(NH4)2SO4] + S) also results in a noteworthy improvement in the current-voltage (I-V) characteristics of Au/n-GaSb Schottky contacts compared to those fabricated on as-received material.

  13. CMB-S4 Technology Book, First Edition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Abitbol, Maximilian H.

    CMB-S4 is a proposed experiment to map the polarization of the Cosmic Microwave Background (CMB) to nearly the cosmic variance limit for the angular scales that are accessible from the ground. The science goals and capabilities of CMB-S4 in illuminating cosmic inflation, measuring the sum of neutrino masses, searching for relativistic relics in the early universe, characterizing dark energy and dark matter, and mapping the matter distribution in the universe have been described in the CMB-S4 Science Book. This Technology Book is a companion volume to the Science Book. The ambitious science goals of the proposed "Stage-IV" CMB-S4 will requiremore » a step forward in experimental capability from the current Stage-III experiments. To guide this process, the community summarized the current state of the technology and identify R&D efforts necessary to advance it for possible use in CMB-S4. The book focused on the technical challenges in four broad areas: Telescope Design; Receiver Optics; Focal-Plane Optical Coupling; and Focal-Plane Sensor and Readout.« less

  14. Breathing of voltage dependent anion channel as revealed by the fractal property of its gating

    NASA Astrophysics Data System (ADS)

    Manna, Smarajit; Banerjee, Jyotirmoy; Ghosh, Subhendu

    2007-12-01

    The gating of voltage dependent anion channel (VDAC) depends on the movement of voltage sensors in the transmembrane region, but the actual mechanism is still not well understood. With a view to understand the phenomenon we have analyzed the current recordings of VDAC in lipid bilayer membrane (BLM) and found that the data show self-similarity and fractal characteristics. We look for the microscopic and molecular basis of fractal behavior of gating of VDAC. A model describing the oscillatory dynamics of voltage sensors of VDAC in the transmembrane region under applied potential has been proposed which gives rise to the aforesaid fractal behavior.

  15. Fiber-optic sensors for aerospace electrical measurements - An update

    NASA Technical Reports Server (NTRS)

    Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

    1991-01-01

    The authors report the progress made on the development of aerospace current and voltage sensors which use fiber-optic and optical sensing heads. These sensors are presently designed to cover ac frequencies from 60 Hz to 20 kHz. The current sensor, based on the Faraday effect in optical fiber, is in advanced development after some initial testing. The emphasis is on packaging methods and ways to maintain consistent sensitivity with changes in temperature. The voltage sensor, utilizing the Pockels effect in a crystal, has excelled in temperature tests. The authors report on the development of these sensors. The authors also relate the technology used in the sensors, the results of evaluation, improvements being made, and the future direction of the work.

  16. Understanding Voltage Decay in Lithium-Rich Manganese-Based Layered Cathode Materials by Limiting Cutoff Voltage.

    PubMed

    Yang, Jingsong; Xiao, Lifen; He, Wei; Fan, Jiangwei; Chen, Zhongxue; Ai, Xinping; Yang, Hanxi; Cao, Yuliang

    2016-07-27

    The effect of the cutoff voltages on the working voltage decay and cyclability of the lithium-rich manganese-based layered cathode (LRMO) was investigated by electrochemical measurements, electrochemical impedance spectroscopy, ex situ X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy line scan technologies. It was found that both lower (2.0 V) and upper (4.8 V) cutoff voltages cause severe voltage decay with cycling due to formation of the spinel phase and migration of the transition metals inside the particles. Appropriate cutoff voltage between 2.8 and 4.4 V can effectively inhibit structural variation as the electrode demonstrates 92% capacity retention and indiscernible working voltage decay over 430 cycles. The results also show that phase transformation not only on high charge voltage but also on low discharge voltage should be addressed to obtain highly stable LRMO materials.

  17. Ultra-Sensitive Strain Sensor Based on Flexible Poly(vinylidene fluoride) Piezoelectric Film

    NASA Astrophysics Data System (ADS)

    Lu, Kai; Huang, Wen; Guo, Junxiong; Gong, Tianxun; Wei, Xiongbang; Lu, Bing-Wei; Liu, Si-Yi; Yu, Bin

    2018-03-01

    A flexible 4 × 4 sensor array with 16 micro-scale capacitive units has been demonstrated based on flexible piezoelectric poly(vinylidene fluoride) (PVDF) film. The piezoelectricity and surface morphology of the PVDF were examined by optical imaging and piezoresponse force microscopy (PFM). The PFM shows phase contrast, indicating clear interface between the PVDF and electrode. The electro-mechanical properties show that the sensor exhibits excellent output response and an ultra-high signal-to-noise ratio. The output voltage and the applied pressure possess linear relationship with a slope of 12 mV/kPa. The hold-and-release output characteristics recover in less than 2.5 μs, demonstrating outstanding electro-mechanical response. Additionally, signal interference between the adjacent arrays has been investigated via theoretical simulation. The results show the interference reduces with decreasing pressure at a rate of 0.028 mV/kPa, highly scalable with electrode size and becoming insignificant for pressure level under 178 kPa.

  18. Ultra-Sensitive Strain Sensor Based on Flexible Poly(vinylidene fluoride) Piezoelectric Film.

    PubMed

    Lu, Kai; Huang, Wen; Guo, Junxiong; Gong, Tianxun; Wei, Xiongbang; Lu, Bing-Wei; Liu, Si-Yi; Yu, Bin

    2018-03-14

    A flexible 4 × 4 sensor array with 16 micro-scale capacitive units has been demonstrated based on flexible piezoelectric poly(vinylidene fluoride) (PVDF) film. The piezoelectricity and surface morphology of the PVDF were examined by optical imaging and piezoresponse force microscopy (PFM). The PFM shows phase contrast, indicating clear interface between the PVDF and electrode. The electro-mechanical properties show that the sensor exhibits excellent output response and an ultra-high signal-to-noise ratio. The output voltage and the applied pressure possess linear relationship with a slope of 12 mV/kPa. The hold-and-release output characteristics recover in less than 2.5 μs, demonstrating outstanding electro-mechanical response. Additionally, signal interference between the adjacent arrays has been investigated via theoretical simulation. The results show the interference reduces with decreasing pressure at a rate of 0.028 mV/kPa, highly scalable with electrode size and becoming insignificant for pressure level under 178 kPa.

  19. 16 CFR Figures 3 and 4 to Part 1204 - High Voltage Test Facility and Antenna System Test Setup

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... 16 Commercial Practices 2 2010-01-01 2010-01-01 false High Voltage Test Facility and Antenna System Test Setup 3 Figures 3 and 4 to Part 1204 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION... ANTENNAS Pt. 1204, Figs. 3, 4 Figures 3 and 4 to Part 1204—High Voltage Test Facility and Antenna System...

  20. 16 CFR Figures 3 and 4 to Part 1204 - High Voltage Test Facility and Antenna System Test Setup

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... 16 Commercial Practices 2 2011-01-01 2011-01-01 false High Voltage Test Facility and Antenna System Test Setup 3 Figures 3 and 4 to Part 1204 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION... ANTENNAS Pt. 1204, Figs. 3, 4 Figures 3 and 4 to Part 1204—High Voltage Test Facility and Antenna System...

  1. 16 CFR Figures 3 and 4 to Part 1204 - High Voltage Test Facility and Antenna System Test Setup

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... 16 Commercial Practices 2 2013-01-01 2013-01-01 false High Voltage Test Facility and Antenna System Test Setup 3 Figures 3 and 4 to Part 1204 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION... ANTENNAS Pt. 1204, Figs. 3, 4 Figures 3 and 4 to Part 1204—High Voltage Test Facility and Antenna System...

  2. 16 CFR Figures 3 and 4 to Part 1204 - High Voltage Test Facility and Antenna System Test Setup

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... 16 Commercial Practices 2 2014-01-01 2014-01-01 false High Voltage Test Facility and Antenna System Test Setup 3 Figures 3 and 4 to Part 1204 Commercial Practices CONSUMER PRODUCT SAFETY COMMISSION... ANTENNAS Pt. 1204, Figs. 3, 4 Figures 3 and 4 to Part 1204—High Voltage Test Facility and Antenna System...

  3. Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History.

    PubMed

    Riedelsberger, Janin; Dreyer, Ingo; Gonzalez, Wendy

    2015-01-01

    Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories-hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

  4. Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History

    PubMed Central

    Riedelsberger, Janin; Dreyer, Ingo; Gonzalez, Wendy

    2015-01-01

    Voltage-gated potassium (K+) channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD), this K+ channel type segregates into at least two main functional categories—hyperpolarization-activated, inward-rectifying (Kin) and depolarization-activated, outward-rectifying (Kout) channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom. PMID:26356684

  5. Microhotplate Temperature Sensor Calibration and BIST.

    PubMed

    Afridi, M; Montgomery, C; Cooper-Balis, E; Semancik, S; Kreider, K G; Geist, J

    2011-01-01

    In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the

  6. Microhotplate Temperature Sensor Calibration and BIST

    PubMed Central

    Afridi, M.; Montgomery, C.; Cooper-Balis, E.; Semancik, S.; Kreider, K. G.; Geist, J.

    2011-01-01

    In this paper we describe a novel long-term microhotplate temperature sensor calibration technique suitable for Built-In Self Test (BIST). The microhotplate thermal resistance (thermal efficiency) and the thermal voltage from an integrated platinum-rhodium thermocouple were calibrated against a freshly calibrated four-wire polysilicon microhotplate-heater temperature sensor (heater) that is not stable over long periods of time when exposed to higher temperatures. To stress the microhotplate, its temperature was raised to around 400 °C and held there for days. The heater was then recalibrated as a temperature sensor, and microhotplate temperature measurements were made based on the fresh calibration of the heater, the first calibration of the heater, the microhotplate thermal resistance, and the thermocouple voltage. This procedure was repeated 10 times over a period of 80 days. The results show that the heater calibration drifted substantially during the period of the test while the microhotplate thermal resistance and the thermocouple-voltage remained stable to within about plus or minus 1 °C over the same period. Therefore, the combination of a microhotplate heater-temperature sensor and either the microhotplate thermal resistance or an integrated thin film platinum-rhodium thermocouple can be used to provide a stable, calibrated, microhotplate-temperature sensor, and the combination of the three sensor is suitable for implementing BIST functionality. Alternatively, if a stable microhotplate-heater temperature sensor is available, such as a properly annealed platinum heater-temperature sensor, then the thermal resistance of the microhotplate and the electrical resistance of the platinum heater will be sufficient to implement BIST. It is also shown that aluminum- and polysilicon-based temperature sensors, which are not stable enough for measuring high microhotplate temperatures (>220 °C) without impractically frequent recalibration, can be used to measure the

  7. Network analysis of semiconducting Zn1-xCdxS based photosensitive device using impedance spectroscopy and current-voltage measurement

    NASA Astrophysics Data System (ADS)

    Datta, Joydeep; Das, Mrinmay; Dey, Arka; Halder, Soumi; Sil, Sayantan; Ray, Partha Pratim

    2017-10-01

    ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn1-xCdxS compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn1-xCdxS/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn0.6Cd0.4S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C-V) characteristic under dark and current-voltage (I-V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I-V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn0.6Cd0.4S fabricated device are derived as 23.01 m2 V-1 s-1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn0.6Cd0.4S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn0.6Cd0.4S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.

  8. Microbial fuel cells as power supply of a low-power temperature sensor

    NASA Astrophysics Data System (ADS)

    Khaled, Firas; Ondel, Olivier; Allard, Bruno

    2016-02-01

    Microbial fuel cells (MFCs) show great promise as a concomitant process for water treatment and as renewable energy sources for environmental sensors. The small energy produced by MFCs and the low output voltage limit the applications of MFCs. Specific converter topologies are required to step-up the output voltage of a MFC. A Power Management Unit (PMU) is proposed for operation at low input voltage and at very low power in a completely autonomous way to capture energy from MFCs with the highest possible efficiency. The application of sensors for monitoring systems in remote locations is an important approach. MFCs could be an alternative energy source in this case. Powering a sensor with MFCs may prove the fact that wastewater may be partly turned into renewable energy for realistic applications. The Power Management Unit is demonstrated for 3.6 V output voltage at 1 mW continuous power, based on a low-cost 0.7-L MFC. A temperature sensor may operate continuously on 2-MFCs in continuous flow mode. A flyback converter under discontinuous conduction mode is also tested to power the sensor. One continuously fed MFC was able to efficiently and continuously power the sensor.

  9. A copper-coated fiber Bragg grating current sensor

    NASA Astrophysics Data System (ADS)

    Jia, Danping; Zhao, Limin; Lin, Yingwen

    2005-01-01

    Conventional current transformer (CT) is based on the principles of electric magnetic induction with copper wire windings and iron cores, it is widely used in power systems. But it emerges more weakness as the applied voltage and power capacity more and more increase. Over the past 20 years optical current sensors have received significant attention by a number of groups around the world as next generation high voltage measurement devices, with a view to replacing iron-corn current transformers in the electric power industry. In the opposite side of conventional current transformer, optical fiber current sensor provides a solution of the existed problems. It brings the significant advantages that they are non-conductive and lightweight, which can allow for much simpler insulation and mounting designs as the application voltage increase to1000kV or more to day. In addition, optical sensors do not exhibit hysteresis and provide a much large dynamic range and frequency response than iron-core CT. Optical fiber Bragg grating current sensor is the most potential important one among the optical current sensors, but its current transferred sensibility and the capability of anti-variance of temperature and stress still in a lower level. In this paper, a copper coated Bragg grating current sensor are described. The sensibility is improved significantly.

  10. Sensor apparatus using an electrochemical cell

    DOEpatents

    Thakur, Mrinal

    2003-07-01

    A method for sensing mechanical quantities such as force, stress, strain, pressure and acceleration is disclosed. This technology is based on a change in the electrochemically generated voltage (electromotive force) with application of force, stress, strain, pressure or acceleration. The change in the voltage is due to a change in the internal resistance of the electrochemical cell with a change in the relative position or orientation of the electrodes (anode and cathode) in the cell. The signal to be detected (e.g. force, stress, strain, pressure or acceleration) is applied to one of the electrodes to cause a change in the relative position or orientation between the electrodes. Various materials, solid, semisolid, gel, paste or liquid can be utilized as the electrolyte. The electrolyte must be an ion conductor. The examples of solid electrolytes include specific polymer conductors, polymer composites, ion conducting glasses and ceramics. The electrodes are made of conductors such as metals with dissimilar electro negativities. Significantly enhanced sensitivities, up to three orders of magnitude higher than that of comparable commercial sensors, are obtained. The materials are substantially less expensive than commercially used materials for mechanical sensors. An apparatus for sensing such mechanical quantities using materials such as doped 1,4 cis-polyisopropene and nafion. The 1,4 cis-polyisopropene may be doped with lithium perchlorate or iodine. The output voltage signal increases with an increase of the sensing area for a given stress. The device can be used as an intruder alarm, among other applications.

  11. Study of imbalanced internal resistance on drop voltage of LiFePO4 battery system connected in parallel

    NASA Astrophysics Data System (ADS)

    Adie Perdana, Fengky; Supriyanto, Agus; Purwanto, Agus; Jamaluddin, Anif

    2017-01-01

    The purpose of this research focuses on the effect of imbalanced internal resistance for the drop voltage of LiFePO4 18650 battery system connected in parallel. The battery pack has been assembled consist of two cell battery LiFePO4 18650 that has difference combination of internal resistance. Battery pack was tested with 1/C constant current charging, 3,65V per group sel, 3,65V constant voltage charging, 5 minutes of rest time between charge and discharge process, 1/2C Constant current discharge until 2,2V, 26 cycle of measurement test, and 4320 minutes rest time after the last charge cycle. We can conclude that the difference combination of internal resistance on the battery pack seriously influence the drop voltage of a battery. Theoretical and experimental result show that the imbalance of internal resistance during cycling are mainly responsible for the drop voltage of LiFePO4 parallel batteries. It is thus a good way to avoid drop voltage fade of parallel battery system by suppressing variations of internal resistance.

  12. [4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide: A novel cathode additive for high-voltage performance in lithium ion batteries

    NASA Astrophysics Data System (ADS)

    Lee, Sang Hyun; Yoon, Sukeun; Hwang, Eui-Hyung; Kwon, Young-Gil; Lee, Young-Gi; Cho, Kuk Young

    2018-02-01

    High-voltage operation of lithium-ion batteries (LIBs) is a facile approach to obtaining high specific energy density, especially for LiNi0·5Mn0·3Co0·2O2 (NMC532) cathodes currently used in mid- and large-sized energy storage devices. However, high-voltage charging (>4.3 V) is accompanied by a rapid capacity fade over long cycles due to severe continuous electrolyte decomposition and instability at the cathode surface. In this study, the sulfite-based compound, [4,4‧-bi(1,3,2-dioxathiolane)] 2,2‧-dioxide (BDTD) is introduced as a novel electrolyte additive to enhance electrochemical performances of alumina-coated NMC532 cathodes cycled in the voltage range of 3.0-4.6 V. X-ray photoelectron spectroscopy (XPS) and AC impedance of cells reveal that BDTD preferentially oxidizes prior to the electrolyte solvents and forms stable film layers on to the cathode surface, preventing increased impedance caused by repeated electrolyte solvent decomposition in high-voltage operation. The cycling performance of the Li/NMC532 half-cell using an electrolyte of 1.0 M LiPF6 in ethylene carbonate/ethyl methyl carbonate (3/7, in volume) can be improved by adding a small amount of BDTD into the electrolyte. BDTD enables the usage of sulfite-type additives for cathodes in high-voltage operation.

  13. Power source for wireless sensors in pipes

    NASA Astrophysics Data System (ADS)

    Keddis, Sherif; Schwesinger, Norbert

    2016-04-01

    In this paper, we present investigations on wireless sensors for fluid control inside a pipe. Autarkic sensors are in the technical trend. They are typically connected with a transceiver unit for data transmission. Sensors usually need a lower amount of energy than data transceivers. Therefore, they are commonly supplied via wires or batteries with electricity. With common technologies, this request leads to high requirements on tightness in liquids since poor sealing could easily lead to failures. Replacement of batteries inside pipes is complicated and almost accompanied by a flow interruption. The application of energy harvesters as power supply is therefore a good alternative. In our studies we used flexible piezoelectric energy harvesters of PVDF (Poly-Vinylidene-Di-Fluoride). All harvesting units consist of piezoelectric PVDF-foils as active layers and Aluminum-foils as electrodes. The layers were stacked alternating on each other and wound to a spool. A LDPE-film wraps the spool and prevents the inflow of liquids. The device has following parameters:

  14. No. of windings: 4 in air, 4, 5, 7 in water
  15. Dimensions: 15 mm Ø 22mm
  16. Materials: PDVF: 25μm Aluminimum: 6μm, LDPE: 25μm
  17. A ring shaped bluff body was placed inside the pipe to induce turbulence in the fluid stream. As the harvesters have been arranged downstream of the bluff body, they were forced to oscillate independent of the media. In each case, deformation of the active layers led to a polarization and a separation of electrical charges. Experiments were carried out in a wind channel as well as in a water pipe. In air, the spool oscillates with a frequency of about 30Hz, at a wind speed of about 7m/s. A -Voltage of about 4V (peak-peak) was measured. This delivers in case of power adjustment, power values of about 0.54μW. In water, the velocity of the fluid was limited to nearly one tenth. Oscillation starts only at a water speed above 0.6m/s. The average oscillation

  18. Regulation of Na+ channel inactivation by the DIII and DIV voltage-sensing domains.

    PubMed

    Hsu, Eric J; Zhu, Wandi; Schubert, Angela R; Voelker, Taylor; Varga, Zoltan; Silva, Jonathan R

    2017-03-06

    Functional eukaryotic voltage-gated Na + (Na V ) channels comprise four domains (DI-DIV), each containing six membrane-spanning segments (S1-S6). Voltage sensing is accomplished by the first four membrane-spanning segments (S1-S4), which together form a voltage-sensing domain (VSD). A critical Na V channel gating process, inactivation, has previously been linked to activation of the VSDs in DIII and DIV. Here, we probe this interaction by using voltage-clamp fluorometry to observe VSD kinetics in the presence of mutations at locations that have been shown to impair Na V channel inactivation. These locations include the DIII-DIV linker, the DIII S4-S5 linker, and the DIV S4-S5 linker. Our results show that, within the 10-ms timeframe of fast inactivation, the DIV-VSD is the primary regulator of inactivation. However, after longer 100-ms pulses, the DIII-DIV linker slows DIII-VSD deactivation, and the rate of DIII deactivation correlates strongly with the rate of recovery from inactivation. Our results imply that, over the course of an action potential, DIV-VSDs regulate the onset of fast inactivation while DIII-VSDs determine its recovery. © 2017 Hsu et al.

  19. Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

    PubMed

    Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

    2016-03-31

    Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

  20. Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

    PubMed

    Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

    2017-11-08

    Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

  21. Hadfield installing UBNT Sensors in the U.S. Laboratory

    NASA Image and Video Library

    2013-02-01

    View of Canadian Space Agency (CSA) Chris Hadfield,Expedition 34 Flight Engineer (FE),installing Ultra-Sonic Background Noise Tests (UBNT) sensors behind rack in the U.S. Laboratory using the International Space Station (ISS) as Testbed for Analog Research (ISTAR) procedures. These sensors detect high frequency noise levels generated by ISS hardware and equipment operating within the U.S. Laboratory. Photo was taken during Expedition 34.

  22. A Simple Sensor Model for THUNDER Actuators

    NASA Technical Reports Server (NTRS)

    Campbell, Joel F.; Bryant, Robert G.

    2009-01-01

    A quasi-static (low frequency) model is developed for THUNDER actuators configured as displacement sensors based on a simple Raleigh-Ritz technique. This model is used to calculate charge as a function of displacement. Using this and the calculated capacitance, voltage vs. displacement and voltage vs. electrical load curves are generated and compared with measurements. It is shown this model gives acceptable results and is useful for determining rough estimates of sensor output for various loads, laminate configurations and thicknesses.

  23. Maximization of the Supportable Number of Sensors in QoS-Aware Cluster-Based Underwater Acoustic Sensor Networks

    PubMed Central

    Nguyen, Thi-Tham; Van Le, Duc; Yoon, Seokhoon

    2014-01-01

    This paper proposes a practical low-complexity MAC (medium access control) scheme for quality of service (QoS)-aware and cluster-based underwater acoustic sensor networks (UASN), in which the provision of differentiated QoS is required. In such a network, underwater sensors (U-sensor) in a cluster are divided into several classes, each of which has a different QoS requirement. The major problem considered in this paper is the maximization of the number of nodes that a cluster can accommodate while still providing the required QoS for each class in terms of the PDR (packet delivery ratio). In order to address the problem, we first estimate the packet delivery probability (PDP) and use it to formulate an optimization problem to determine the optimal value of the maximum packet retransmissions for each QoS class. The custom greedy and interior-point algorithms are used to find the optimal solutions, which are verified by extensive simulations. The simulation results show that, by solving the proposed optimization problem, the supportable number of underwater sensor nodes can be maximized while satisfying the QoS requirements for each class. PMID:24608009

  24. Maximization of the supportable number of sensors in QoS-aware cluster-based underwater acoustic sensor networks.

    PubMed

    Nguyen, Thi-Tham; Le, Duc Van; Yoon, Seokhoon

    2014-03-07

    This paper proposes a practical low-complexity MAC (medium access control) scheme for quality of service (QoS)-aware and cluster-based underwater acoustic sensor networks (UASN), in which the provision of differentiated QoS is required. In such a network, underwater sensors (U-sensor) in a cluster are divided into several classes, each of which has a different QoS requirement. The major problem considered in this paper is the maximization of the number of nodes that a cluster can accommodate while still providing the required QoS for each class in terms of the PDR (packet delivery ratio). In order to address the problem, we first estimate the packet delivery probability (PDP) and use it to formulate an optimization problem to determine the optimal value of the maximum packet retransmissions for each QoS class. The custom greedy and interior-point algorithms are used to find the optimal solutions, which are verified by extensive simulations. The simulation results show that, by solving the proposed optimization problem, the supportable number of underwater sensor nodes can be maximized while satisfying the QoS requirements for each class.

  1. Self-calibrated humidity sensor in CMOS without post-processing.

    PubMed

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2012-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  2. Prediction of Trace Element based Energizing Sensor Control System using PWM

    NASA Astrophysics Data System (ADS)

    Zukri, Mohammad Nizar Bin Mohamed; Abu Bakar, Elmi Bin; Uchiyama, Naoki; Abdullah, Mohamad Nazir Bin

    2018-05-01

    A real-time system for field-work monitoring wastewater laden with heavy metal in industrial discharge through wireless communication network was developed. The monitoring system poses an interesting challenge in order to determine existing metal ion in the solution whereas the previous result only consider total dissolve ion. This paper aims to distinguish the metal ion based on reaction determination in solution. The control algorithm was implemented as generating voltage input for energize conductivity sensor since the voltage corresponding to oxidation and reaction based on standard reduction potential. Implementation of ATmega2560 microcontroller for control voltage fed on sensor equivalent to controlling the PWM duty cycle. PID controller was designed uses a microcontroller (Arduino) platform with manual tuning for identify reaction process and sufficient voltage input. From the experimental result, is found that the proposed PI controller has excellent tracking and measurement performance. Low-pass filter was applied in programming to make the system understand that signal has achieved stable. The development of hardware and software of the closed loop system has an enhancement of measurement performance and high feasibility for SME’s company in economic point of view. The desired objective is to achieve a system with the stable measurement and sufficient voltage supply. This system will provide an accurate and precise control efficiently without using costly component and complicated circuit.

  3. High performance NO2 sensor using MoS2 nanowires network

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Goel, Neeraj; Kumar, Mahesh

    2018-01-01

    We report on a high-performance NO2 sensor based on a one dimensional MoS2 nanowire (NW) network. The MoS2 NW network was synthesized using chemical transport reaction through controlled turbulent vapor flow. The crystal structure and surface morphology of MoS2 NWs were confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Further, the sensing behavior of the nanowires was investigated at different temperatures for various concentrations of NO2 and the sensor exhibited about 2-fold enhanced sensitivity with a low detection limit of 4.6 ppb for NO2 at 60 °C compared to sensitivity at room temperature. Moreover, it showed a fast response (16 s) with complete recovery (172 s) at 60 °C, while sensitivity of the device was decreased at 120 °C. The efficient sensing with reliable selectivity toward NO2 of the nanowires is attributed to a combination of abundant active edge sites along with a large surface area and tuning of the potential barrier at the intersections of nanowires during adsorption/desorption of gas molecules.

  4. The challenge of sCMOS image sensor technology to EMCCD

    NASA Astrophysics Data System (ADS)

    Chang, Weijing; Dai, Fang; Na, Qiyue

    2018-02-01

    In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

  5. Depression of voltage-activated Ca2+ release in skeletal muscle by activation of a voltage-sensing phosphatase

    PubMed Central

    Berthier, Christine; Kutchukian, Candice; Bouvard, Clément; Okamura, Yasushi

    2015-01-01

    Phosphoinositides act as signaling molecules in numerous cellular transduction processes, and phosphatidylinositol 4,5-bisphosphate (PtdIns(4,5)P2) regulates the function of several types of plasma membrane ion channels. We investigated the potential role of PtdIns(4,5)P2 in Ca2+ homeostasis and excitation–contraction (E-C) coupling of mouse muscle fibers using in vivo expression of the voltage-sensing phosphatases (VSPs) Ciona intestinalis VSP (Ci-VSP) or Danio rerio VSP (Dr-VSP). Confocal images of enhanced green fluorescent protein–tagged Dr-VSP revealed a banded pattern consistent with VSP localization within the transverse tubule membrane. Rhod-2 Ca2+ transients generated by 0.5-s-long voltage-clamp depolarizing pulses sufficient to elicit Ca2+ release from the sarcoplasmic reticulum (SR) but below the range at which VSPs are activated were unaffected by the presence of the VSPs. However, in Ci-VSP–expressing fibers challenged by 5-s-long depolarizing pulses, the Ca2+ level late in the pulse (3 s after initiation) was significantly lower at 120 mV than at 20 mV. Furthermore, Ci-VSP–expressing fibers showed a reversible depression of Ca2+ release during trains, with the peak Ca2+ transient being reduced by ∼30% after the application of 10 200-ms-long pulses to 100 mV. A similar depression was observed in Dr-VSP–expressing fibers. Cav1.1 Ca2+ channel–mediated current was unaffected by Ci-VSP activation. In fibers expressing Ci-VSP and a pleckstrin homology domain fused with monomeric red fluorescent protein (PLCδ1PH-mRFP), depolarizing pulses elicited transient changes in mRFP fluorescence consistent with release of transverse tubule–bound PLCδ1PH domain into the cytosol; the voltage sensitivity of these changes was consistent with that of Ci-VSP activation, and recovery occurred with a time constant in the 10-s range. Our results indicate that the PtdIns(4,5)P2 level is tightly maintained in the transverse tubule membrane of the muscle fibers

  6. Depression of voltage-activated Ca2+ release in skeletal muscle by activation of a voltage-sensing phosphatase.

    PubMed

    Berthier, Christine; Kutchukian, Candice; Bouvard, Clément; Okamura, Yasushi; Jacquemond, Vincent

    2015-04-01

    Phosphoinositides act as signaling molecules in numerous cellular transduction processes, and phosphatidylinositol 4,5-bisphosphate (PtdIns(4,5)P2) regulates the function of several types of plasma membrane ion channels. We investigated the potential role of PtdIns(4,5)P2 in Ca(2+) homeostasis and excitation-contraction (E-C) coupling of mouse muscle fibers using in vivo expression of the voltage-sensing phosphatases (VSPs) Ciona intestinalis VSP (Ci-VSP) or Danio rerio VSP (Dr-VSP). Confocal images of enhanced green fluorescent protein-tagged Dr-VSP revealed a banded pattern consistent with VSP localization within the transverse tubule membrane. Rhod-2 Ca(2+) transients generated by 0.5-s-long voltage-clamp depolarizing pulses sufficient to elicit Ca(2+) release from the sarcoplasmic reticulum (SR) but below the range at which VSPs are activated were unaffected by the presence of the VSPs. However, in Ci-VSP-expressing fibers challenged by 5-s-long depolarizing pulses, the Ca(2+) level late in the pulse (3 s after initiation) was significantly lower at 120 mV than at 20 mV. Furthermore, Ci-VSP-expressing fibers showed a reversible depression of Ca(2+) release during trains, with the peak Ca(2+) transient being reduced by ∼30% after the application of 10 200-ms-long pulses to 100 mV. A similar depression was observed in Dr-VSP-expressing fibers. Cav1.1 Ca(2+) channel-mediated current was unaffected by Ci-VSP activation. In fibers expressing Ci-VSP and a pleckstrin homology domain fused with monomeric red fluorescent protein (PLCδ1PH-mRFP), depolarizing pulses elicited transient changes in mRFP fluorescence consistent with release of transverse tubule-bound PLCδ1PH domain into the cytosol; the voltage sensitivity of these changes was consistent with that of Ci-VSP activation, and recovery occurred with a time constant in the 10-s range. Our results indicate that the PtdIns(4,5)P2 level is tightly maintained in the transverse tubule membrane of the muscle fibers

  7. Molecularly imprinted electrochemical sensor based on amine group modified graphene covalently linked electrode for 4-nonylphenol detection.

    PubMed

    Chen, Hong-Jun; Zhang, Zhao-Hui; Cai, Rong; Chen, Xing; Liu, Yu-Nan; Rao, Wei; Yao, Shou-Zhuo

    2013-10-15

    In this work, an imprinted electrochemical sensor based on electrochemical reduced graphene covalently modified carbon electrode was developed for the determination of 4-nonylphenol (NP). An amine-terminated functional graphene oxide was covalently modified onto the electrode surface with diazonium salt reactions to improve the stability and reproducibility of the imprinted sensor. The electrochemical properties of each modified electrodes were investigated with differential pulse voltammetry (DPV). The electrochemical characteristic of the imprinted sensor was also investigated using electrochemical impedance spectroscopy (EIS) in detail. The response currents of the imprinted electrode exhibited a linear relationship toward 4-nonylphenol concentration ranging from 1.0 × 10(-11) to 1.0 × 10(-8) gm L(-1) with the detection limit of 3.5 × 10(-12) gm L(-1) (S/N=3). The fabricated electrochemical imprinted sensor was successfully applied to the detection of 4-nonylphenol in rain and lake water samples. Crown Copyright © 2013 Published by Elsevier B.V. All rights reserved.

  8. Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage

    NASA Astrophysics Data System (ADS)

    Yang, Xiaolei; Tao, Yonghong; Yang, Tongtong; Huang, Runhua; Song, Bai

    2018-03-01

    Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices, n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 kV. The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm2.

  9. Toward developing long-life water quality sensors for the ISS using planar REDOX and conductivity sensors

    NASA Technical Reports Server (NTRS)

    Buehler, M. G.; Kuhlman, G. M.; Keymeulen, D.; Myung, N.; Kounaves, S. P.

    2003-01-01

    REDOX and conductivity sensors are metal electrodes that are used to detect ionic species in solution by measuring the electrochemical cell current as the voltage is scanned. This paper describes the construction of the sensors, the potentiostat electronics, the measurement methodology, and applications to water quality measurements.

  10. Development of a Spoke Type Torque Sensor Using Painting Carbon Nanotube Strain Sensors.

    PubMed

    Kim, Sung Yong; Park, Se Hoon; Choi, Baek Gyu; Kang, In Hyuk; Park, Sang Wook; Shin, Jeong Woo; Kim, Jin Ho; Baek, Woon Kyung; Lim, Kwon Taek; Kim, Young-Ju; Song, Jae-Bok; Kang, Inpil

    2018-03-01

    This study reports a hub-spoke type joint torque sensor involving strain gauges made of multiwalled carbon nanotubes (MWCNT). We developed the novel joint torque sensor for robots by means of MWCNT/epoxy strain sensors (0.8 wt%, gauge factor 2) to overcome the limits of conventional foil strain gauges. Solution mixing process was hired to fabricate a liquid strain sensor that can easily be installed on any complicated surfaces. We painted the MWCNT/epoxy mixing liquid on the hub-spoke type joint torque sensor to form the piezoresistive strain gauges. The painted sensor converted its strain into torque by mean of the installed hub-spoke structure after signal processing. We acquired sufficient torque voltage responses from the painted MWCNT/epoxy strain sensor.

  11. Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chao, Jin Yu; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn

    Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor inmore » series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.« less

  12. Bidirectional QoS support for novelty detection applications based on hierarchical wireless sensor network model

    NASA Astrophysics Data System (ADS)

    Edwards, Mark; Hu, Fei; Kumar, Sunil

    2004-10-01

    events, the most important QoS parameters should include sensing data packet transmission reliability, lifetime extension degree from sensor sleeping control, event detection latency, congestion reduction level through removal of redundant sensing data. In this paper, we will focus on the following bi-directional QoS topics: (1) Downstream (sink-to-sensor) QoS: Reliable data query command forwarding to particular sensor(s). In other words, we do not want to lose the query command packets; (2) Upstream (sensor-to-sink) QoS: transmission of sensed data with priority control. The more interested data that can help in novelty detection should be transmitted on an optimal path with higher reliability. We propose the use of Differentiated Data Collection. Due to the large-scale nature and resource constraints of typical wireless sensor networks, such as limited energy, small memory (typically RAM < 4K bytes) and short communication range, the above problems become even more challenging. Besides QoS support issue, we will also describe our low-energy Sensing Data Transmission network Architecture. Our research results show the scalability and energy-efficiency of our proposed WSN QoS schemes.

  13. Solid state oxygen sensor

    DOEpatents

    Garzon, F.H.; Chung, B.W.; Raistrick, I.D.; Brosha, E.L.

    1996-08-06

    Solid state oxygen sensors are provided with a yttria-doped zirconia as an electrolyte and use the electrochemical oxygen pumping of the zirconia electrolyte. A linear relationship between oxygen concentration and the voltage arising at a current plateau occurs when oxygen accessing the electrolyte is limited by a diffusion barrier. A diffusion barrier is formed herein with a mixed electronic and oxygen ion-conducting membrane of lanthanum-containing perovskite or zirconia-containing fluorite. A heater may be used to maintain an adequate oxygen diffusion coefficient in the mixed conducting layer. 4 figs.

  14. Skylab program earth resouces experiment package. Volume 4: Sensor performance evaluation (S193 R/S). [radiometer/scatterometer

    NASA Technical Reports Server (NTRS)

    Kenney, G. P.

    1975-01-01

    The results of the sensor performance evaluation of the 13.9 GHz radiometer/scatterometer, which was part of the earth resources experiment package on Skylab. Findings are presented in the areas of housekeeping parameters, antenna gain and scanning performance, dynamic range, linearity, precision, resolution, stability, integration time, and transmitter output. Supplementary analyses covering performance anomalies, data stream peculiarities, aircraft sensor data comparisons, scatterometer saturation characteristics, and RF heating effects are reported. Results of the evaluation show that instrument performance was generally as expected, but capability degradations were observed to result from three major anomalies. Conclusions are drawn from the evaluation results, and recommendations for improving the effectiveness of a future program are offered. An addendum describes the special evaluation techniques developed and applied in the sensor performance evaluation tasks.

  15. A frequency-sensing readout using piezoelectric sensors for sensing of physiological signals.

    PubMed

    Buxi, Dilpreet; Redouté, Jean-Michel; Yuce, Mehmet Rasit

    2014-01-01

    Together with a charge or voltage amplifier, piezoelectric sensors are commonly used to pick up physiological vibrations from the body. As an alternative to chopper or auto-zero amplifiers, frequency sensing is known in literature to provide advantages of noise immunity, interfacing to digital readout systems as well as tunable range of sensing. A frequency-sensing readout circuit for sensing low voltage signals from piezoelectric sensors is successfully developed and tested in this work. The output voltage of a piezoelectric sensor is fed to a varactor, which is part of an Colpitts LC oscillator. The oscillation frequency is converted into a voltage using a phase locked loop. The circuit is compared to a reference design in terms of linearity, noise and transfer function. The readout has a input-referred noise voltage of 2.24μV/√Hz and consumes 15 mA at 5V supply. Arterial pulse wave signals and the cardiac vibrations from the chest are measured from one subject to show the proof of concept of the proposed readout. The results of this work are intended to contribute towards alternative low noise analog front end designs for piezoelectric sensors.

  16. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

    PubMed

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

    2016-06-18

    This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

  17. Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

    NASA Astrophysics Data System (ADS)

    Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

    2003-06-01

    This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

  18. A Novel Passive Wireless Sensor for Concrete Humidity Monitoring.

    PubMed

    Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

    2016-09-20

    This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

  19. A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

    PubMed Central

    Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

    2016-01-01

    This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods. PMID:27657070

  20. HOPG/ZnO/HOPG pressure sensor

    NASA Astrophysics Data System (ADS)

    Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

    2017-12-01

    Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

  1. Segmented wind energy harvester based on contact-electrification and as a self-powered flow rate sensor

    NASA Astrophysics Data System (ADS)

    Su, Yuanjie; Xie, Guangzhong; Xie, Fabiao; Xie, Tao; Zhang, Qiuping; Zhang, Hulin; Du, Hongfei; Du, Xiaosong; Jiang, Yadong

    2016-06-01

    A single-electrode-based segmented triboelectric nanogenerator (S-TENG) was developed. By utilizing the wind-induced vibration of a fluorinated ethylene propylene (FEP) film between two copper electrodes, the S-TENG delivers an open-circuit voltage up to 36 V and a short-circuit current of 11.8 μA, which can simultaneously light up 20 LEDs and charge capacitors. Moreover, the S-TENG holds linearity between output current and flow rate, revealing its feasibility as a self-powered wind speed sensor. This work demonstrates potential applications of S-TENG in wind energy harvester, self-powered gas sensor, high altitude air navigation.

  2. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    PubMed Central

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-01-01

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. PMID:26516864

  3. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    PubMed

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  4. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    NASA Technical Reports Server (NTRS)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  5. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    NASA Astrophysics Data System (ADS)

    Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

  6. Low power wireless sensor networks for infrastructure monitoring

    NASA Astrophysics Data System (ADS)

    Ghaed, Mohammad Hassan; Ghahramani, Mohammad Mahdi; Chen, Gregory; Fojtik, Matthew; Blaauw, David; Flynn, Michael P.; Sylvester, Dennis

    2012-04-01

    Sensors with long lifetimes are ideal for infrastructure monitoring. Miniaturized sensor systems are only capable of storing small amounts of energy. Prior work has increased sensor lifetime through the reduction of supply voltage , necessitating voltage conversion from storage elements such as batteries. Sensor lifetime can be further extended by harvesting from solar, vibrational, or thermal energy. Since harvested energy is sporadic, it must be detected and stored. Harvesting sources do not provide voltage levels suitable for secondary power sources, necessitating DC-DC upconversion. We demonstrate a 8.75mm3 sensor system with a near-threshold ARM microcontroller, custom 3.3fW/bit SRAM, two 1mm2 solar cells, a thin-film Li-ion battery, and integrated power management unit. The 7.7μW system enters a 550pW data-retentive sleep state between measurements and harvests solar energy to enable energy autonomy. Our receiver and transmitter architectures benefit from a design strategy that employs mixed signal and digital circuit schemes that perform well in advanced CMOS integrated circuit technologies. A prototype transmitter implemented in 0.13μm CMOS satisfies the requirements for Zigbee, but consumes far less power consumption than state-of-the-art commercial devices.

  7. New Gas Polarographic Hydrogen Sensor

    NASA Technical Reports Server (NTRS)

    Dominguez, Jesus A.; Barile, Ron

    2004-01-01

    Polarography is the measurement of the current that flows in solution as a function of an applied voltage. The actual form of the observed polarographic current depends upon the manner in which the voltage is applied and on the characteristics of the working electrode. The new gas polarographic H2 sensor shows a current level increment with concentration of the gaseous H2 similar to those relating to metal ions in liquid electrolytes in well-known polarography. This phenomenon is caused by the fact that the diffusion of the gaseous H2 through a gas diffusion hole built in the sensor is a rate-determining step in the gaseous-hydrogen sensing mechanism. The diffusion hole artificially limits the diffusion of the gaseous H2 toward the electrode located at the sensor cavity. This gas polarographic H2 sensor. is actually an electrochemical-pumping cell since the gaseous H2 is in fact pumped via the electrochemical driving force generated between the electrodes. Gaseous H2 enters the diffusion hole and reaches the first electrode (anode) located in the sensor cavity to be transformed into an H+ ions or protons; H+ ions pass through the electrolyte and reach the second electrode (cathode) to be reformed to gaseous H2. Gas polarographic 02 sensors are commercially available; a gas polarographic 02 sensor was used to prove the feasibility of building a new gas polarographic H2 sensor.

  8. Linear air-fuel sensor development

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Garzon, F.; Miller, C.

    1996-12-14

    The electrochemical zirconia solid electrolyte oxygen sensor, is extensively used for monitoring oxygen concentrations in various fields. They are currently utilized in automobiles to monitor the exhaust gas composition and control the air-to-fuel ratio, thus reducing harmful emission components and improving fuel economy. Zirconia oxygen sensors, are divided into two classes of devices: (1) potentiometric or logarithmic air/fuel sensors; and (2) amperometric or linear air/fuel sensors. The potentiometric sensors are ideally suited to monitor the air-to-fuel ratio close to the complete combustion stoichiometry; a value of about 14.8 to 1 parts by volume. This occurs because the oxygen concentration changesmore » by many orders of magnitude as the air/fuel ratio is varied through the stoichiometric value. However, the potentiometric sensor is not very sensitive to changes in oxygen partial pressure away from the stoichiometric point due to the logarithmic dependence of the output voltage signal on the oxygen partial pressure. It is often advantageous to operate gasoline power piston engines with excess combustion air; this improves fuel economy and reduces hydrocarbon emissions. To maintain stable combustion away from stoichiometry, and enable engines to operate in the excess oxygen (lean burn) region several limiting-current amperometric sensors have been reported. These sensors are based on the electrochemical oxygen ion pumping of a zirconia electrolyte. They typically show reproducible limiting current plateaus with an applied voltage caused by the gas diffusion overpotential at the cathode.« less

  9. A Printed Organic Amplification System for Wearable Potentiometric Electrochemical Sensors.

    PubMed

    Shiwaku, Rei; Matsui, Hiroyuki; Nagamine, Kuniaki; Uematsu, Mayu; Mano, Taisei; Maruyama, Yuki; Nomura, Ayako; Tsuchiya, Kazuhiko; Hayasaka, Kazuma; Takeda, Yasunori; Fukuda, Takashi; Kumaki, Daisuke; Tokito, Shizuo

    2018-03-02

    Electrochemical sensor systems with integrated amplifier circuits play an important role in measuring physiological signals via in situ human perspiration analysis. Signal processing circuitry based on organic thin-film transistors (OTFTs) have significant potential in realizing wearable sensor devices due to their superior mechanical flexibility and biocompatibility. Here, we demonstrate a novel potentiometric electrochemical sensing system comprised of a potassium ion (K + ) sensor and amplifier circuits employing OTFT-based pseudo-CMOS inverters, which have a highly controllable switching voltage and closed-loop gain. The ion concentration sensitivity of the fabricated K + sensor was 34 mV/dec, which was amplified to 160 mV/dec (by a factor of 4.6) with high linearity. The developed system is expected to help further the realization of ultra-thin and flexible wearable sensor devices for healthcare applications.

  10. Superior Sensor Making Sense in Military, Medicine

    NASA Technical Reports Server (NTRS)

    2004-01-01

    A fiber-optic voltage sensor developed a decade ago for NASA's aircraft and space power systems has been the building block for a string of new sensor products offering safe, accurate detection and measurement for electrically noisy and hazardous environments.

  11. A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

    PubMed

    Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

    2015-12-01

    In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

  12. Temperature compensated and self-calibrated current sensor

    DOEpatents

    Yakymyshyn, Christopher Paul; Brubaker, Michael Allen; Yakymyshyn, Pamela Jane

    2007-09-25

    A method is described to provide temperature compensation and reduction of drift due to aging for a current sensor based on a plurality of magnetic field sensors positioned around a current carrying conductor. The offset voltage signal generated by each magnetic field sensor is used to correct variations in the output signal due to temperature variations and aging.

  13. Phosphoinositide 5- and 3-phosphatase activities of a voltage-sensing phosphatase in living cells show identical voltage dependence

    PubMed Central

    Keum, Dongil; Kim, Dong-Il; Suh, Byung-Chang

    2016-01-01

    Voltage-sensing phosphatases (VSPs) are homologs of phosphatase and tensin homolog (PTEN), a phosphatidylinositol 3,4-bisphosphate [PI(3,4)P2] and phosphatidylinositol 3,4,5-trisphosphate [PI(3,4,5)P3] 3-phosphatase. However, VSPs have a wider range of substrates, cleaving 3-phosphate from PI(3,4)P2 and probably PI(3,4,5)P3 as well as 5-phosphate from phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] and PI(3,4,5)P3 in response to membrane depolarization. Recent proposals say these reactions have differing voltage dependence. Using Förster resonance energy transfer probes specific for different PIs in living cells with zebrafish VSP, we quantitate both voltage-dependent 5- and 3-phosphatase subreactions against endogenous substrates. These activities become apparent with different voltage thresholds, voltage sensitivities, and catalytic rates. As an analytical tool, we refine a kinetic model that includes the endogenous pools of phosphoinositides, endogenous phosphatase and kinase reactions connecting them, and four exogenous voltage-dependent 5- and 3-phosphatase subreactions of VSP. We show that apparent voltage threshold differences for seeing effects of the 5- and 3-phosphatase activities in cells are not due to different intrinsic voltage dependence of these reactions. Rather, the reactions have a common voltage dependence, and apparent differences arise only because each VSP subreaction has a different absolute catalytic rate that begins to surpass the respective endogenous enzyme activities at different voltages. For zebrafish VSP, our modeling revealed that 3-phosphatase activity against PI(3,4,5)P3 is 55-fold slower than 5-phosphatase activity against PI(4,5)P2; thus, PI(4,5)P2 generated more slowly from dephosphorylating PI(3,4,5)P3 might never accumulate. When 5-phosphatase activity was counteracted by coexpression of a phosphatidylinositol 4-phosphate 5-kinase, there was accumulation of PI(4,5)P2 in parallel to PI(3,4,5)P3 dephosphorylation

  14. Capacitively-coupled inductive sensors for measurements of pulsed currents and pulsed magnetic fields

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Ekdahl, C.A.

    In experiments involving pulsed high magnetic fields the appearance of the full induced voltage at the output terminals of large-area inductive sensors such as diamagnetic loops and Rogowski belts imposes severe requirements on the insulation near the output. Capacitive detection of the inductive-sensor output voltage provides an ideal geometry for high-voltage insulation, and also accomplishes the necessary voltage division. An inductive-shunt current monitor was designed to utilize the capacitive-detection principle. The contruction of this device and its performance are described in this paper.

  15. Electrocatalytic cermet sensor

    DOEpatents

    Shoemaker, Erika L.; Vogt, Michael C.

    1998-01-01

    A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

  16. UHF front-end feeding RFID-based body sensor networks by exploiting the reader signal

    NASA Astrophysics Data System (ADS)

    Pasca, M.; Colella, R.; Catarinucci, L.; Tarricone, L.; D'Amico, S.; Baschirotto, A.

    2016-05-01

    This paper presents an integrated, high-sensitivity UHF radio frequency identification (RFID) power management circuit for body sensor network applications. The circuit consists of a two-stage RF-DC Dickson's rectifier followed by an integrated five-stage DC-DC Pelliconi's charge pump driven by an ultralow start-up voltage LC oscillator. The DC-DC charge pump interposed between the RF-DC rectifier and the output load provides the RF to load isolation avoiding losses due to the diodes reverse saturation current. The RF-DC rectifier has been realized on FR4 substrate, while the charge pump and the oscillator have been realized in 180 nm complementary metal oxide semiconductor (CMOS) technology. Outdoor measurements demonstrate the ability of the power management circuit to provide 400 mV output voltage at 14 m distance from the UHF reader, in correspondence of -25 dBm input signal power. As demonstrated in the literature, such output voltage level is suitable to supply body sensor network nodes.

  17. Two Components of Voltage-Dependent Inactivation in Cav1.2 Channels Revealed by Its Gating Currents

    PubMed Central

    Ferreira, Gonzalo; Ríos, Eduardo; Reyes, Nicolás

    2003-01-01

    Voltage-dependent inactivation (VDI) was studied through its effects on the voltage sensor in Cav1.2 channels expressed in tsA 201 cells. Two kinetically distinct phases of VDI in onset and recovery suggest the presence of dual VDI processes. Upon increasing duration of conditioning depolarizations, the half-distribution potential (V1/2) of intramembranous mobile charge was negatively shifted as a sum of two exponential terms, with time constants 0.5 s and 4 s, and relative amplitudes near 50% each. This kinetics behavior was consistent with that of increment of maximal charge related to inactivation (Qn). Recovery from inactivation was also accompanied by a reduction of Qn that varied with recovery time as a sum of two exponentials. The amplitudes of corresponding exponential terms were strongly correlated in onset and recovery, indicating that channels recover rapidly from fast VDI and slowly from slow VDI. Similar to charge “immobilization,” the charge moved in the repolarization (OFF) transient became slower during onset of fast VDI. Slow VDI had, instead, hallmarks of interconversion of charge. Confirming the mechanistic duality, fast VDI virtually disappeared when Li+ carried the current. A nine-state model with parallel fast and slow inactivation pathways from the open state reproduces most of the observations. PMID:12770874

  18. Thrombospondin-4 divergently regulates voltage-gated Ca2+ channel subtypes in sensory neurons after nerve injury.

    PubMed

    Pan, Bin; Guo, Yuan; Wu, Hsiang-En; Park, John; Trinh, Van Nancy; Luo, Z David; Hogan, Quinn H

    2016-09-01

    Loss of high-voltage-activated (HVA) calcium current (ICa) and gain of low-voltage-activated (LVA) ICa after painful peripheral nerve injury cause elevated excitability in sensory neurons. Nerve injury is also accompanied by increased expression of the extracellular matrix glycoprotein thrombospondin-4 (TSP4), and interruption of TSP4 function can reverse or prevent behavioral hypersensitivity after injury. We therefore investigated TSP4 regulation of ICa in dorsal root ganglion (DRG) neurons. During depolarization adequate to activate HVA ICa, TSP4 decreases both N- and L-type ICa and the associated intracellular calcium transient. In contrast, TSP4 increases ICa and the intracellular calcium signal after low-voltage depolarization, which we confirmed is due to ICa through T-type channels. These effects are blocked by gabapentin, which ameliorates neuropathic pain by targeting the α2δ1 calcium subunit. Injury-induced changes of HVA and LVA ICa are attenuated in TSP4 knockout mice. In the neuropathic pain model of spinal nerve ligation, TSP4 application did not further regulate ICa of injured DRG neurons. Taken together, these findings suggest that elevated TSP4 after peripheral nerve injury may contribute to hypersensitivity of peripheral sensory systems by decreasing HVA and increasing LVA in DRG neurons by targeting the α2δ1 calcium subunit. Controlling TSP4 overexpression in peripheral sensory neurons may be a target for analgesic drug development for neuropathic pain.

  19. Cross-Layer Algorithms for QoS Enhancement in Wireless Multimedia Sensor Networks

    NASA Astrophysics Data System (ADS)

    Saxena, Navrati; Roy, Abhishek; Shin, Jitae

    A lot of emerging applications like advanced telemedicine and surveillance systems, demand sensors to deliver multimedia content with precise level of QoS enhancement. Minimizing energy in sensor networks has been a much explored research area but guaranteeing QoS over sensor networks still remains an open issue. In this letter we propose a cross-layer approach combining Network and MAC layers, for QoS enhancement in wireless multimedia sensor networks. In the network layer a statistical estimate of sensory QoS parameters is performed and a nearoptimal genetic algorithmic solution is proposed to solve the NP-complete QoS-routing problem. On the other hand the objective of the proposed MAC algorithm is to perform the QoS-based packet classification and automatic adaptation of the contention window. Simulation results demonstrate that the proposed protocol is capable of providing lower delay and better throughput, at the cost of reasonable energy consumption, in comparison with other existing sensory QoS protocols.

  20. Development and Measurements of a Mid-Infrared Multi-Gas Sensor System for CO, CO2 and CH4 Detection

    PubMed Central

    Dong, Ming; Zheng, Chuantao; Miao, Shuzhuo; Zhang, Yu; Du, Qiaoling; Wang, Yiding

    2017-01-01

    A multi-gas sensor system was developed that uses a single broadband light source and multiple carbon monoxide (CO), carbon dioxide (CO2) and methane (CH4) pyroelectric detectors by use of the time division multiplexing (TDM) technique. A stepper motor-based rotating system and a single-reflection spherical optical mirror were designed and adopted to realize and enhance multi-gas detection. Detailed measurements under static detection mode (without rotation) and dynamic mode (with rotation) were performed to study the performance of the sensor system for the three gas species. Effects of the motor rotating period on sensor performances were also investigated and a rotation speed of 0.4π rad/s was required to obtain a stable sensing performance, corresponding to a detection period of ~10 s to realize one round of detection. Based on an Allan deviation analysis, the 1σ detection limits under static operation are 2.96, 4.54 and 2.84 parts per million in volume (ppmv) for CO, CO2 and CH4, respectively and the 1σ detection limits under dynamic operations are 8.83, 8.69 and 10.29 ppmv for the three gas species, respectively. The reported sensor has potential applications in various fields requiring CO, CO2 and CH4 detection such as in coal mines. PMID:28953260

  1. Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yoon, Joonseok; Kim, Howon; Ju, Honglyoul, E-mail: tesl@yonsei.ac.kr

    2016-03-28

    The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO{sub 2}) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO{sub 2}. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT inmore » various-sized devices. Our findings on VO{sub 2} can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.« less

  2. Overview of the U.S. DOE Hydrogen Safety, Codes and Standards Program. Part 4: Hydrogen Sensors; Preprint

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Buttner, William J.; Rivkin, Carl; Burgess, Robert

    Hydrogen sensors are recognized as a critical element in the safety design for any hydrogen system. In this role, sensors can perform several important functions including indication of unintended hydrogen releases, activation of mitigation strategies to preclude the development of dangerous situations, activation of alarm systems and communication to first responders, and to initiate system shutdown. The functionality of hydrogen sensors in this capacity is decoupled from the system being monitored, thereby providing an independent safety component that is not affected by the system itself. The importance of hydrogen sensors has been recognized by DOE and by the Fuel Cellmore » Technologies Office's Safety and Codes Standards (SCS) program in particular, which has for several years supported hydrogen safety sensor research and development. The SCS hydrogen sensor programs are currently led by the National Renewable Energy Laboratory, Los Alamos National Laboratory, and Lawrence Livermore National Laboratory. The current SCS sensor program encompasses the full range of issues related to safety sensors, including development of advance sensor platforms with exemplary performance, development of sensor-related code and standards, outreach to stakeholders on the role sensors play in facilitating deployment, technology evaluation, and support on the proper selection and use of sensors.« less

  3. Optical fiber extrinsic Fabry-Perot interferometer sensors for ultrasound detection

    NASA Astrophysics Data System (ADS)

    Sun, Qingguo; Chen, Na; Ding, Yuetong; Chen, Zhenyi; Wang, Tingyun

    2009-11-01

    In this paper, a new method is proposed to fabricate an optical fiber extrinsic Fabry-Perot interferometer (EFPI) as an ultrasonic sensor. An acoustic emission detecting system is constructed based on multiple EFPI sensors and demodulation circuit. Ultrasound detection experiments were done from both traditional piezoelectric transducer (PZT) and high voltage discharge. In the experiments, strong ultrasound signals were detected in both cases. The signal attenuation related to the distance and the angle between the acoustic emission source and the FP sensor are obtained. The results indicate that the receiving angle of the FP sensor is nearly 90° and the maximum detection distance in the air is more than 200cm. Furthermore, four sensors are used to locate the position of the ultrasound source produced by high voltage discharge.

  4. Inductive Position Sensor

    NASA Technical Reports Server (NTRS)

    Youngquist, Robert C. (Inventor); Simmons, Stephen M. (Inventor)

    2015-01-01

    An inductive position sensor uses three parallel inductors, each of which has an axial core that is an independent magnetic structure. A first support couples first and second inductors and separate them by a fixed distance. A second support coupled to a third inductor disposed between the first and second inductors. The first support and second support are configured for relative movement as distance changes from the third inductor to each of the first and second inductors. An oscillating current is supplied to the first and second inductors. A device measures a phase component of a source voltage generating the oscillating current and a phase component of voltage induced in the third inductor when the oscillating current is supplied to the first and second inductors such that the phase component of the voltage induced overlaps the phase component of the source voltage.

  5. Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

    PubMed Central

    Hirvonen, Liisa M.; Suhling, Klaus

    2016-01-01

    Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications. PMID:27136556

  6. The Assessment for Sensitivity of a NO2 Gas Sensor with ZnGa2O4/ZnO Core-Shell Nanowires—a Novel Approach

    PubMed Central

    Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Hsu, Cheng-Liang; Hsueh, Ting Jen; Shieh, Tien-Yu

    2010-01-01

    The application of novel core-shell nanowires composed of ZnGa2O4/ZnO to improve the sensitivity of NO2 gas sensors is demonstrated in this study. The growth of ZnGa2O4/ZnO core-shell nanowires is performed by reactive evaporation on patterned ZnO:Ga/SiO2/Si templates at 600 °C. This is to form the homogeneous structure of the sensors investigated in this report to assess their sensitivity in terms of NO2 detection. These novel NO2 gas sensors were evaluated at working temperatures of 25 °C and at 250 °C, respectively. The result reveals the ZnGa2O4/ZnO core-shell nanowires present a good linear relationship (R2 > 0.99) between sensitivity and NO2 concentration at both working temperatures. These core-shell nanowire sensors also possess the highest response (<90 s) and recovery (<120 s) values with greater repeatability seen for NO2 sensors at room temperature, unlike traditional sensors that only work effectively at much higher temperatures. The data in this study indicates the newly-developed ZnGa2O4/ZnO core-shell nanowire based sensors are highly promising for industrial applications. PMID:22319286

  7. Defective Fast Inactivation Recovery of Nav1.4 in Congenital Myasthenic Syndrome

    PubMed Central

    Arnold, W. David; Feldman, Daniel H.; Ramirez, Sandra; He, Liuyuan; Kassar, Darine; Quick, Adam; Klassen, Tara L.; Lara, Marian; Nguyen, Joanna; Kissel, John T.; Lossin, Christoph; Maselli, Ricardo A.

    2015-01-01

    Objective To describe the unique phenotype and genetic findings in a 57-year-old female with a rare form of congenital myasthenic syndrome (CMS) associated with longstanding muscle fatigability, and to investigate the underlying pathophysiology. Methods We used whole-cell voltage clamping to compare the biophysical parameters of wild-type and Arg1457His-mutant Nav1.4. Results Clinical and neurophysiological evaluation revealed features consistent with CMS. Sequencing of candidate genes indicated no abnormalities. However, analysis of SCN4A, the gene encoding the skeletal muscle sodium channel Nav1.4, revealed a homozygous mutation predicting an arginine-to-histidine substitution at position 1457 (Arg1457His), which maps to the channel’s voltage sensor, specifically D4/S4. Whole-cell patch clamp studies revealed that the mutant required longer hyperpolarization to recover from fast inactivation, which produced a profound use-dependent current attenuation not seen in the wild type. The mutant channel also had a marked hyperpolarizing shift in its voltage dependence of inactivation as well as slowed inactivation kinetics. Interpretation We conclude that Arg1457His compromises muscle fiber excitability. The mutant fast-inactivates with significantly less depolarization, and it recovers only after extended hyperpolarization. The resulting enhancement in its use dependence reduces channel availability, which explains the patient’s muscle fatigability. Arg1457His offers molecular insight into a rare form of CMS precipitated by sodium channel inactivation defects. Given this channel’s involvement in other muscle disorders such as paramyotonia congenita and hyperkalemic periodic paralysis, our study exemplifies how variations within the same gene can give rise to multiple distinct dysfunctions and phenotypes, revealing residues important in basic channel function. PMID:25707578

  8. High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

    NASA Astrophysics Data System (ADS)

    Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

    2018-04-01

    We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

  9. Study on Miniaturized UHF Antennas for Partial Discharge Detection in High-Voltage Electrical Equipment

    PubMed Central

    Liu, Jingcun; Zhang, Guogang; Dong, Jinlong; Wang, Jianhua

    2015-01-01

    Detecting partial discharge (PD) is an effective way to evaluate the condition of high-voltage electrical equipment insulation. The UHF detection method has attracted attention due to its high sensitivity, strong interference resistance, and ability to locate PDs. In this paper, a miniaturized equiangular spiral antenna (ESA) for UHF detection that uses a printed circuit board is proposed. I-shaped, L-shaped, and C-shaped microstrip baluns were designed to match the impedance between the ESA and coaxial cable and were verified by a vector network analyzer. For comparison, three other types of UHF antenna were also designed: A microstrip patch antenna, a microstrip slot antenna, and a printed dipole antenna. Their antenna factors were calibrated in a uniform electric field of different frequencies modulated in a gigahertz transverse electromagnetic cell. We performed comparison experiments on PD signal detection using an artificial defect model based on the international IEC 60270 standard. We also conducted time-delay test experiments on the ESA sensor to locate a PD source. It was found that the proposed ESA sensor meets PD signal detection requirements. The sensor’s compact size makes it suitable for internal installation in high-voltage electrical equipment. PMID:26610506

  10. Functional characterization of Kv11.1 (hERG) potassium channels split in the voltage-sensing domain.

    PubMed

    de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

    2018-03-23

    Voltage-dependent KCNH family potassium channel functionality can be reconstructed using non-covalently linked voltage-sensing domain (VSD) and pore modules (split channels). However, the necessity of a covalent continuity for channel function has not been evaluated at other points within the two functionally independent channel modules. We find here that by cutting Kv11.1 (hERG, KCNH2) channels at the different loops linking the transmembrane spans of the channel core, not only channels split at the S4-S5 linker level, but also those split at the intracellular S2-S3 and the extracellular S3-S4 loops, yield fully functional channel proteins. Our data indicate that albeit less markedly, channels split after residue 482 in the S2-S3 linker resemble the uncoupled gating phenotype of those split at the C-terminal end of the VSD S4 transmembrane segment. Channels split after residues 514 and 518 in the S3-S4 linker show gating characteristics similar to those of the continuous wild-type channel. However, breaking the covalent link at this level strongly accelerates the voltage-dependent accessibility of a membrane impermeable methanethiosulfonate reagent to an engineered cysteine at the N-terminal region of the S4 transmembrane helix. Thus, besides that of the S4-S5 linker, structural integrity of the intracellular S2-S3 linker seems to constitute an important factor for proper transduction of VSD rearrangements to opening and closing the cytoplasmic gate. Furthermore, our data suggest that the short and probably rigid characteristics of the extracellular S3-S4 linker are not an essential component of the Kv11.1 voltage sensing machinery.

  11. Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

    DOE PAGES

    Dong, Lei; Li, Chunguang; Sanchez, Nancy P.; ...

    2016-01-05

    A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

  12. Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dong, Lei; Li, Chunguang; Sanchez, Nancy P.

    A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

  13. Cobalt Oxide Nanosheet and CNT Micro Carbon Monoxide Sensor Integrated with Readout Circuit on Chip

    PubMed Central

    Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

    2010-01-01

    The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively. PMID:22294897

  14. Cobalt oxide nanosheet and CNT micro carbon monoxide sensor integrated with readout circuit on chip.

    PubMed

    Dai, Ching-Liang; Chen, Yen-Chi; Wu, Chyan-Chyi; Kuo, Chin-Fu

    2010-01-01

    The study presents a micro carbon monoxide (CO) sensor integrated with a readout circuit-on-a-chip manufactured by the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process. The sensing film of the sensor is a composite cobalt oxide nanosheet and carbon nanotube (CoOOH/CNT) film that is prepared by a precipitation-oxidation method. The structure of the CO sensor is composed of a polysilicon resistor and a sensing film. The sensor, which is of a resistive type, changes its resistance when the sensing film adsorbs or desorbs CO gas. The readout circuit is used to convert the sensor resistance into the voltage output. The post-processing of the sensor includes etching the sacrificial layers and coating the sensing film. The advantages of the sensor include room temperature operation, short response/recovery times and easy post-processing. Experimental results show that the sensitivity of the CO sensor is about 0.19 mV/ppm, and the response and recovery times are 23 s and 34 s for 200 ppm CO, respectively.

  15. OBSAPS Data Acquisition System: Operator’s Manual and System Overview

    DTIC Science & Technology

    2011-05-01

    Explanation of Druck Voltage to Depth Conversion used during OBSAPS (April-May’11)   25   Druck  Pressure  sensor  conversion  from...for H-91, PA Voltage, PA Current and Sonobuoy and Druck pressure sensor analog inputs. 6. Software settable thresholds for H-91, PA Voltage, PA...17. Custom dry side box for Druck Pressure Sensor supply voltage and dropping resistor. 18. Battery 9-30VDC for supplying Druck power 19. Druck PTX

  16. Electrocatalytic cermet sensor

    DOEpatents

    Shoemaker, E.L.; Vogt, M.C.

    1998-06-30

    A sensor is described for O{sub 2} and CO{sub 2} gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer. 16 figs.

  17. Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

    PubMed

    Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

    2010-11-01

    A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

  18. ZnO-carbon nanofibers for stable, high response, and selective H2S sensors.

    PubMed

    Zhang, Jitao; Zhu, Zijian; Chen, Changmiao; Chen, Zhi; Cai, Mengqiu; Qu, Baihua; Wang, Taihong; Zhang, Ming

    2018-07-06

    Hydrogen sulfide (H 2 S), as a typical atmospheric pollutant, is neurotoxic and flammable even at a very low concentration. In this study, we design stable H 2 S sensors based on ZnO-carbon nanofibers. Nanofibers with 30.34 wt% carbon are prepared by a facial electrospinning route followed by an annealing treatment. The resulting H 2 S sensors show excellent selectivity and response compared to the pure ZnO nanofiber H 2 S sensors, particularly the response in the range of 102-50 ppm of H 2 S. Besides, they exhibited a nearly constant response of approximately 40-20 ppm of H 2 S over 60 days. The superior performance of these H 2 S sensors can be attributed to the protection of carbon, which ensures the high stability of ZnO, and oxygen vacancies that improve the response and selectivity of H 2 S. The good performance of ZnO-carbon H 2 S sensors suggests that composites with oxygen vacancies prepared by a facial electrospinning route may provide a new research strategy in the field of gas sensors, photocatalysts, and semiconductor devices.

  19. Fuzzy Logic Control Based QoS Management in Wireless Sensor/Actuator Networks

    PubMed Central

    Xia, Feng; Zhao, Wenhong; Sun, Youxian; Tian, Yu-Chu

    2007-01-01

    Wireless sensor/actuator networks (WSANs) are emerging rapidly as a new generation of sensor networks. Despite intensive research in wireless sensor networks (WSNs), limited work has been found in the open literature in the field of WSANs. In particular, quality-of-service (QoS) management in WSANs remains an important issue yet to be investigated. As an attempt in this direction, this paper develops a fuzzy logic control based QoS management (FLC-QM) scheme for WSANs with constrained resources and in dynamic and unpredictable environments. Taking advantage of the feedback control technology, this scheme deals with the impact of unpredictable changes in traffic load on the QoS of WSANs. It utilizes a fuzzy logic controller inside each source sensor node to adapt sampling period to the deadline miss ratio associated with data transmission from the sensor to the actuator. The deadline miss ratio is maintained at a pre-determined desired level so that the required QoS can be achieved. The FLC-QM has the advantages of generality, scalability, and simplicity. Simulation results show that the FLC-QM can provide WSANs with QoS support. PMID:28903288

  20. Low-resistance strip sensors for beam-loss event protection

    NASA Astrophysics Data System (ADS)

    Ullán, M.; Benítez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; García, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A. A.; Sadrozinski, H. F.-W.

    2014-11-01

    AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the "far" end of the strip from the punch-through structure leading to large voltages. We present here our developments to fabricate low-resistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.

  1. A mobile ferromagnetic shape detection sensor using a Hall sensor array and magnetic imaging.

    PubMed

    Misron, Norhisam; Shin, Ng Wei; Shafie, Suhaidi; Marhaban, Mohd Hamiruce; Mailah, Nashiren Farzilah

    2011-01-01

    This paper presents a mobile Hall sensor array system for the shape detection of ferromagnetic materials that are embedded in walls or floors. The operation of the mobile Hall sensor array system is based on the principle of magnetic flux leakage to describe the shape of the ferromagnetic material. Two permanent magnets are used to generate the magnetic flux flow. The distribution of magnetic flux is perturbed as the ferromagnetic material is brought near the permanent magnets and the changes in magnetic flux distribution are detected by the 1-D array of the Hall sensor array setup. The process for magnetic imaging of the magnetic flux distribution is done by a signal processing unit before it displays the real time images using a netbook. A signal processing application software is developed for the 1-D Hall sensor array signal acquisition and processing to construct a 2-D array matrix. The processed 1-D Hall sensor array signals are later used to construct the magnetic image of ferromagnetic material based on the voltage signal and the magnetic flux distribution. The experimental results illustrate how the shape of specimens such as square, round and triangle shapes is determined through magnetic images based on the voltage signal and magnetic flux distribution of the specimen. In addition, the magnetic images of actual ferromagnetic objects are also illustrated to prove the functionality of mobile Hall sensor array system for actual shape detection. The results prove that the mobile Hall sensor array system is able to perform magnetic imaging in identifying various ferromagnetic materials.

  2. A Mobile Ferromagnetic Shape Detection Sensor Using a Hall Sensor Array and Magnetic Imaging

    PubMed Central

    Misron, Norhisam; Shin, Ng Wei; Shafie, Suhaidi; Marhaban, Mohd Hamiruce; Mailah, Nashiren Farzilah

    2011-01-01

    This paper presents a Mobile Hall Sensor Array system for the shape detection of ferromagnetic materials that are embedded in walls or floors. The operation of the Mobile Hall Sensor Array system is based on the principle of magnetic flux leakage to describe the shape of the ferromagnetic material. Two permanent magnets are used to generate the magnetic flux flow. The distribution of magnetic flux is perturbed as the ferromagnetic material is brought near the permanent magnets and the changes in magnetic flux distribution are detected by the 1-D array of the Hall sensor array setup. The process for magnetic imaging of the magnetic flux distribution is done by a signal processing unit before it displays the real time images using a netbook. A signal processing application software is developed for the 1-D Hall sensor array signal acquisition and processing to construct a 2-D array matrix. The processed 1-D Hall sensor array signals are later used to construct the magnetic image of ferromagnetic material based on the voltage signal and the magnetic flux distribution. The experimental results illustrate how the shape of specimens such as square, round and triangle shapes is determined through magnetic images based on the voltage signal and magnetic flux distribution of the specimen. In addition, the magnetic images of actual ferromagnetic objects are also illustrated to prove the functionality of Mobile Hall Sensor Array system for actual shape detection. The results prove that the Mobile Hall Sensor Array system is able to perform magnetic imaging in identifying various ferromagnetic materials. PMID:22346653

  3. Comparison of sensitivity and resolution load sensor at various configuration polymer optical fiber

    NASA Astrophysics Data System (ADS)

    Arifin, A.; Yusran, Miftahuddin, Abdullah, Bualkar; Tahir, Dahlang

    2017-01-01

    This study uses a load sensor with a macro-bending on polymer optical fiber loop model which is placed between two plates with a buffer spring. The load sensor with light intensity modulation principle is an infrared LED emits light through the polymer optical fiber then received by the phototransistor and amplifier. Output voltage from the amplifier continued to arduino sequence and displayed on the computer. Load augment on the sensor resulted in an increase of curvature on polymer optical fibers that can cause power losses gets bigger too. This matter will result in the intensity of light that received by phototransistor getting smaller, so that the output voltage that ligable on computer will be getting smaller too. The sensitivity and resolution load sensors analyzed based on configuration with various amount of loops, imperfection on the jacket, and imperfection at the cladding and core of polymer optical fiber. The results showed that the augment on the amount of load, imperfection on the jacket and imperfection on the sheath and core polymer optical fiber can improve the sensitivity and resolution of the load sensor. The best sensors resolution obtained on the number of loops 4 with imperfection 8 on the core and cladding polymer optical fiber that is 0.037 V/N and 0,026 N. The advantages of the load sensor based on polymers optical fiber are easy to make, low cost and simple to use measurement methods.

  4. A Novel High-Sensitivity, Low-Power, Liquid Crystal Temperature Sensor

    PubMed Central

    Algorri, José Francisco; Urruchi, Virginia; Bennis, Noureddine; Sánchez-Pena, José Manuel

    2014-01-01

    A novel temperature sensor based on nematic liquid crystal permittivity as a sensing magnitude, is presented. This sensor consists of a specific micrometric structure that gives considerable advantages from other previous related liquid crystal (LC) sensors. The analytical study reveals that permittivity change with temperature is introduced in a hyperbolic cosine function, increasing the sensitivity term considerably. The experimental data has been obtained for ranges from −6 °C to 100 °C. Despite this, following the LC datasheet, theoretical ranges from −40 °C to 109 °C could be achieved. These results have revealed maximum sensitivities of 33 mVrms/°C for certain temperature ranges; three times more than of most silicon temperature sensors. As it was predicted by the analytical study, the micrometric size of the proposed structure produces a high output voltage. Moreover the voltage's sensitivity to temperature response can be controlled by the applied voltage. This response allows temperature measurements to be carried out without any amplification or conditioning circuitry, with very low power consumption. PMID:24721771

  5. Mechanisms Responsible for ω-Pore Currents in Cav Calcium Channel Voltage-Sensing Domains.

    PubMed

    Monteleone, Stefania; Lieb, Andreas; Pinggera, Alexandra; Negro, Giulia; Fuchs, Julian E; Hofer, Florian; Striessnig, Jörg; Tuluc, Petronel; Liedl, Klaus R

    2017-10-03

    Mutations of positively charged amino acids in the S4 transmembrane segment of a voltage-gated ion channel form ion-conducting pathways through the voltage-sensing domain, named ω-current. Here, we used structure modeling and MD simulations to predict pathogenic ω-currents in Ca V 1.1 and Ca V 1.3 Ca 2+ channels bearing several S4 charge mutations. Our modeling predicts that mutations of Ca V 1.1-R1 (R528H/G, R897S) or Ca V 1.1-R2 (R900S, R1239H) linked to hypokalemic periodic paralysis type 1 and of Ca V 1.3-R3 (R990H) identified in aldosterone-producing adenomas conducts ω-currents in resting state, but not during voltage-sensing domain activation. The mechanism responsible for the ω-current and its amplitude depend on the number of charges in S4, the position of the mutated S4 charge and countercharges, and the nature of the replacing amino acid. Functional characterization validates the modeling prediction showing that Ca V 1.3-R990H channels conduct ω-currents at hyperpolarizing potentials, but not upon membrane depolarization compared with wild-type channels. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  6. A 12-bit high-speed column-parallel two-step single-slope analog-to-digital converter (ADC) for CMOS image sensors.

    PubMed

    Lyu, Tao; Yao, Suying; Nie, Kaiming; Xu, Jiangtao

    2014-11-17

    A 12-bit high-speed column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for CMOS image sensors is proposed. The proposed ADC employs a single ramp voltage and multiple reference voltages, and the conversion is divided into coarse phase and fine phase to improve the conversion rate. An error calibration scheme is proposed to correct errors caused by offsets among the reference voltages. The digital-to-analog converter (DAC) used for the ramp generator is based on the split-capacitor array with an attenuation capacitor. Analysis of the DAC's linearity performance versus capacitor mismatch and parasitic capacitance is presented. A prototype 1024 × 32 Time Delay Integration (TDI) CMOS image sensor with the proposed ADC architecture has been fabricated in a standard 0.18 μm CMOS process. The proposed ADC has average power consumption of 128 μW and a conventional rate 6 times higher than the conventional SS ADC. A high-quality image, captured at the line rate of 15.5 k lines/s, shows that the proposed ADC is suitable for high-speed CMOS image sensors.

  7. Liquid Nitrogen as Fast High Voltage Switching Medium

    NASA Astrophysics Data System (ADS)

    Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

    2002-12-01

    Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

  8. Analysis of the transfer function for layered piezoelectric ultrasonic sensors

    NASA Astrophysics Data System (ADS)

    Gutiérrrez-Reyes, E.; García-Segundo, C.; García-Valenzuela, A.; Reyes-Ramírez, B.; Gutiérrez-Juárez, G.; Guadarrama-Santana, A.

    2017-06-01

    We model theoretically the voltage response to an acoustic pulse of a multilayer system forming a low noise capacitive sensor including a Polyvinylidene Fluoride piezoelectric film. First we model a generic piezoelectric detector consisting of a piezoelectric film between two metallic electrodes that are the responsible to convert the acoustic signal into a voltage signal. Then we calculate the pressure-to-voltage transfer function for a N-layer piezo-electric capacitor detector, allowing to study the effects of the electrode and protective layers thickness in typical layered piezoelectric sensors. The derived transfer function, when multiplied by the Fourier transform of the incident acoustic pulse, gives the voltage electric response in the frequency domain. An important concern regarding the transfer function is that it may have zeros at specific frequencies, and thus inverting the voltage Fourier transform of the pulse to recover the pressure signal in the time domain is not always, in principle, possible. Our formulas can be used to predict the existence and locations of such zeroes. We illustrate the use of the transfer function by predicting the electric signal generated at a multilayer piezoelectric sensor to an ultrasonic pulse generated photoacoustically by a laser pulse at a three media system with impedance mismatch. This theoretical calculations are compared with our own experimental measurements.

  9. A time-resolved image sensor for tubeless streak cameras

    NASA Astrophysics Data System (ADS)

    Yasutomi, Keita; Han, SangMan; Seo, Min-Woong; Takasawa, Taishi; Kagawa, Keiichiro; Kawahito, Shoji

    2014-03-01

    This paper presents a time-resolved CMOS image sensor with draining-only modulation (DOM) pixels for tube-less streak cameras. Although the conventional streak camera has high time resolution, the device requires high voltage and bulky system due to the structure with a vacuum tube. The proposed time-resolved imager with a simple optics realize a streak camera without any vacuum tubes. The proposed image sensor has DOM pixels, a delay-based pulse generator, and a readout circuitry. The delay-based pulse generator in combination with an in-pixel logic allows us to create and to provide a short gating clock to the pixel array. A prototype time-resolved CMOS image sensor with the proposed pixel is designed and implemented using 0.11um CMOS image sensor technology. The image array has 30(Vertical) x 128(Memory length) pixels with the pixel pitch of 22.4um. .

  10. A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application

    PubMed Central

    Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

    2017-01-01

    In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software. PMID:28420132

  11. A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application.

    PubMed

    Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

    2017-04-15

    In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software.

  12. A novel method of temperature compensation for piezoresistive microcantilever-based sensors.

    PubMed

    Han, Jianqiang; Wang, Xiaofei; Yan, Tianhong; Li, Yan; Song, Meixuan

    2012-03-01

    Microcantilever with integrated piezoresistor has been applied to in situ surface stress measurement in the field of biochemical sensors. It is well known that piezoresistive cantilever-based sensors are sensitive to ambient temperature changing due to highly temperature-dependent piezoresistive effect and mismatch in thermal expansion of composite materials. This paper proposes a novel method of temperature drift compensation for microcantilever-based sensors with a piezoresistive full Wheatstone bridge integrated at the clamped ends by subtracting the amplified output voltage of the reference cantilever from the output voltage of the sensing cantilever through a simple temperature compensating circuit. Experiments show that the temperature drift of microcantilever sensors can be significantly reduced by the method.

  13. Optical design of a compact near-infrared multispecies gas sensor

    NASA Astrophysics Data System (ADS)

    Larson, Joshua; Toor, Fatima

    In this work we present the design of a compact and cost effective near infrared (NIR) gas sensor system that can detect nitrous oxide (NOx) , ammonia (NH3) , and methane (CH4) simultaneously. These three gases were chosen as they are environmental pollutants and their monitoring is especially important in agricultural states like Iowa. As a first step in our design process, we have developed a Matlab model based on Beer-Lambert's law to generate sample sensor data for each of the gases at different concentrations. The data measured from the sensor system will be as a function of time instead of wavelength, so we performed Fourier Transform analysis on the sensor data to convert it to voltage versus time. The simulated sensor data will enable to design software algorithms to separate the absorption signals for each of the three gases. As a second step, we have developed a lab-based sensor system comprising of three components: (i) a NIR lead sulfide (PbS) photodiode, (ii) an LED that emits 1900 nm to 2600 nm, and (iii) an optical cavity where the gases are introduced. We are designing the optical cavity using ray optics COMSOL finite element method simulator using the principles of a compact chaotic cavity that will allow the LED light to have a path length of greater than 100 m within the cavity, enabling high sensitivity gas detection. Our end goal is to have an autonomous drone mounted device that is simple and inexpensive to use. We plan to license this technology to agricultural equipment manufacturers.

  14. Dimerization of the voltage-sensing phosphatase controls its voltage-sensing and catalytic activity.

    PubMed

    Rayaprolu, Vamseedhar; Royal, Perrine; Stengel, Karen; Sandoz, Guillaume; Kohout, Susy C

    2018-05-07

    Multimerization is a key characteristic of most voltage-sensing proteins. The main exception was thought to be the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP). In this study, we show that multimerization is also critical for Ci-VSP function. Using coimmunoprecipitation and single-molecule pull-down, we find that Ci-VSP stoichiometry is flexible. It exists as both monomers and dimers, with dimers favored at higher concentrations. We show strong dimerization via the voltage-sensing domain (VSD) and weak dimerization via the phosphatase domain. Using voltage-clamp fluorometry, we also find that VSDs cooperate to lower the voltage dependence of activation, thus favoring the activation of Ci-VSP. Finally, using activity assays, we find that dimerization alters Ci-VSP substrate specificity such that only dimeric Ci-VSP is able to dephosphorylate the 3-phosphate from PI(3,4,5)P 3 or PI(3,4)P 2 Our results indicate that dimerization plays a significant role in Ci-VSP function. © 2018 Rayaprolu et al.

  15. Sensors Applications, Volume 4, Sensors for Automotive Applications

    NASA Astrophysics Data System (ADS)

    Marek, Jiri; Trah, Hans-Peter; Suzuki, Yasutoshi; Yokomori, Iwao

    2003-07-01

    An international team of experts from the leading companies in this field gives a detailed picture of existing as well as future applications. They discuss in detail current technologies, design and construction concepts, market considerations and commercial developments. Topics covered include vehicle safety, fuel consumption, air conditioning, emergency control, traffic control systems, and electronic guidance using radar and video. Meeting the growing need for comprehensive information on the capabilities, potentials and limitations of modern sensor systems, Sensors Applications is a book series covering the use of sophisticated technologies and materials for the creation of advanced sensors and their implementation in the key areas process monitoring, building control, health care, automobiles, aerospace, environmental technology and household appliances.

  16. An 1.4 ppm/°C bandgap voltage reference with automatic curvature-compensation technique

    NASA Astrophysics Data System (ADS)

    Zhou, Zekun; Yu, Hongming; Shi, Yue; Zhang, Bo

    2017-12-01

    A high-precision Bandgap voltage reference (BGR) with a novel curvature-compensation scheme is proposed in this paper. The temperature coefficient (TC) can be automatically optimized with a built-in adaptive curvature-compensation technique, which is realized in a digitization control way. Firstly, an exponential curvature compensation method is adopted to reduce the TC in a certain degree, especially in low temperature range. Then, the temperature drift of BGR in higher temperature range can be further minimized by dynamic zero-temperature-coefficient point tracking with temperature changes. With the help of proposed adaptive signal processing, the output voltage of BGR can approximately maintain zero TC in a wider temperature range. Experiment results of the BGR proposed in this paper, which is implemented in 0.35-μm BCD process, illustrate that the TC of 1.4ppm/°C is realized under the power supply voltage of 3.6V and the power supply rejection of the proposed circuit is -67dB.

  17. Mesoporous ZnS–NiS Nanocomposites for Nonenzymatic Electrochemical Glucose Sensors

    PubMed Central

    Wei, Chengzhen; Cheng, Cheng; Zhao, Junhong; Wang, Zhangtao; Wu, Haipeng; Gu, Kaiyue; Du, Weimin; Pang, Huan

    2015-01-01

    Mesoporous ZnS–NiS composites are prepared via ion- exchange reactions using ZnS as the precursor. The prepared mesoporous ZnS–NiS composite materials have large surface areas (137.9 m2 g−1) compared with the ZnS precursor. More importantly, the application of these mesoporous ZnS–NiS composites as nonenzymatic glucose sensors was successfully explored. Electrochemical sensors based on mesoporous ZnS–NiS composites exhibit a high selectivity and a low detection limit (0.125 μm) toward the oxidation of glucose, which can mainly be attributed to the morphological characteristics of the mesoporous structure with high specific surface area and a rational composition of the two constituents. In addition, the mesoporous ZnS–NiS composites coated on the surface of electrodes can be used to modify the mass transport regime, and this alteration can, in favorable circumstances, facilitate the amperometric discrimination between species. These results suggest that such mesoporous ZnS–NiS composites are promising materials for nonenzymatic glucose sensors. PMID:25861568

  18. Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

    NASA Astrophysics Data System (ADS)

    Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

    2016-08-01

    The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

  19. Statistical-QoS Guaranteed Energy Efficiency Optimization for Energy Harvesting Wireless Sensor Networks.

    PubMed

    Gao, Ya; Cheng, Wenchi; Zhang, Hailin

    2017-08-23

    Energy harvesting, which offers a never-ending energy supply, has emerged as a prominent technology to prolong the lifetime and reduce costs for the battery-powered wireless sensor networks. However, how to improve the energy efficiency while guaranteeing the quality of service (QoS) for energy harvesting based wireless sensor networks is still an open problem. In this paper, we develop statistical delay-bounded QoS-driven power control policies to maximize the effective energy efficiency (EEE), which is defined as the spectrum efficiency under given specified QoS constraints per unit harvested energy, for energy harvesting based wireless sensor networks. For the battery-infinite wireless sensor networks, our developed QoS-driven power control policy converges to the Energy harvesting Water Filling (E-WF) scheme and the Energy harvesting Channel Inversion (E-CI) scheme under the very loose and stringent QoS constraints, respectively. For the battery-finite wireless sensor networks, our developed QoS-driven power control policy becomes the Truncated energy harvesting Water Filling (T-WF) scheme and the Truncated energy harvesting Channel Inversion (T-CI) scheme under the very loose and stringent QoS constraints, respectively. Furthermore, we evaluate the outage probabilities to theoretically analyze the performance of our developed QoS-driven power control policies. The obtained numerical results validate our analysis and show that our developed optimal power control policies can optimize the EEE over energy harvesting based wireless sensor networks.

  20. Statistical-QoS Guaranteed Energy Efficiency Optimization for Energy Harvesting Wireless Sensor Networks

    PubMed Central

    Cheng, Wenchi; Zhang, Hailin

    2017-01-01

    Energy harvesting, which offers a never-ending energy supply, has emerged as a prominent technology to prolong the lifetime and reduce costs for the battery-powered wireless sensor networks. However, how to improve the energy efficiency while guaranteeing the quality of service (QoS) for energy harvesting based wireless sensor networks is still an open problem. In this paper, we develop statistical delay-bounded QoS-driven power control policies to maximize the effective energy efficiency (EEE), which is defined as the spectrum efficiency under given specified QoS constraints per unit harvested energy, for energy harvesting based wireless sensor networks. For the battery-infinite wireless sensor networks, our developed QoS-driven power control policy converges to the Energy harvesting Water Filling (E-WF) scheme and the Energy harvesting Channel Inversion (E-CI) scheme under the very loose and stringent QoS constraints, respectively. For the battery-finite wireless sensor networks, our developed QoS-driven power control policy becomes the Truncated energy harvesting Water Filling (T-WF) scheme and the Truncated energy harvesting Channel Inversion (T-CI) scheme under the very loose and stringent QoS constraints, respectively. Furthermore, we evaluate the outage probabilities to theoretically analyze the performance of our developed QoS-driven power control policies. The obtained numerical results validate our analysis and show that our developed optimal power control policies can optimize the EEE over energy harvesting based wireless sensor networks. PMID:28832509