Displacement Damage Induced Catastrophic Second Breakdown in Silicon Carbide Schottky Power Diodes

NASA Technical Reports Server (NTRS)

Scheick, Leif; Selva, Luis; Selva, Luis

2004-01-01

A novel catastrophic breakdown mode in reversed biased Silicon carbide diodes has been seen for low LET particles. These particles are too low in LET to induce SEB, however SEB was seen from particles of higher LET. The low LET mechanism correlates with second breakdown in diodes due to increase leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices, but the inherent reliability issue with silicon carbide have proven challenging.

A Direct Reading Thermometer Based on a Silicon Diode.

ERIC Educational Resources Information Center

Kirkup, L.; Tonthat, C.

1998-01-01

Describes a simple circuit based on an inexpensive quad operational amplifier that permits a direct-reading temperature instrument to be constructed using silicon diodes. Encourages the use of this equipment in introductory thermal experiments. (DDR)

On-chip optical diode based on silicon photonic crystal heterojunctions.

PubMed

Wang, Chen; Zhou, Chang-Zhu; Li, Zhi-Yuan

2011-12-19

Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and different mode transitions. The measured transmission spectra show considerable unidirectional transmission behavior, in good agreement with numerical simulations. The experimental realization of on-chip optical diodes with wavelength-scale size using all-dielectric, passive, and linear silicon photonic crystal structures may help to construct on-chip optical logical devices without nonlinearity or magnetism, and would open up a road towards photonic computers.

Determination of X-ray flux using silicon pin diodes

PubMed Central

Owen, Robin L.; Holton, James M.; Schulze-Briese, Clemens; Garman, Elspeth F.

2009-01-01

Accurate measurement of photon flux from an X-ray source, a parameter required to calculate the dose absorbed by the sample, is not yet routinely available at macromolecular crystallography beamlines. The development of a model for determining the photon flux incident on pin diodes is described here, and has been tested on the macromolecular crystallography beamlines at both the Swiss Light Source, Villigen, Switzerland, and the Advanced Light Source, Berkeley, USA, at energies between 4 and 18 keV. These experiments have shown that a simple model based on energy deposition in silicon is sufficient for determining the flux incident on high-quality silicon pin diodes. The derivation and validation of this model is presented, and a web-based tool for the use of the macromolecular crystallography and wider synchrotron community is introduced. PMID:19240326

The 13.9 GHz short pulse radar noise figure measurements utilizing silicon and gallium-arsenide mixer diodes

NASA Technical Reports Server (NTRS)

Dombrowski, M.

1977-01-01

An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.

Modeling silicon diode energy response factors for use in therapeutic photon beams.

PubMed

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Linear and passive silicon diodes, isolators, and logic gates

NASA Astrophysics Data System (ADS)

Li, Zhi-Yuan

2013-12-01

Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

Entrance dose measurements for in‐vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors

PubMed Central

Zhu, X. R.

2000-01-01

Silicon diode dosimeters have been used routinely for in‐vivo dosimetry. Despite their popularity, an appropriate implementation of an in‐vivo dosimetry program using diode detectors remains a challenge for clinical physicists. One common approach is to relate the diode readout to the entrance dose, that is, dose to the reference depth of maximum dose such as dmax for the 10×10 cm2 field. Various correction factors are needed in order to properly infer the entrance dose from the diode readout, depending on field sizes, target‐to‐surface distances (TSD), and accessories (such as wedges and compensate filters). In some clinical practices, however, no correction factor is used. In this case, a diode‐dosimeter‐based in‐vivo dosimetry program may not serve the purpose effectively; that is, to provide an overall check of the dosimetry procedure. In this paper, we provide a formula to relate the diode readout to the entrance dose. Correction factors for TSD, field size, and wedges used in this formula are also clearly defined. Two types of commercial diode detectors, ISORAD (n‐type) and the newly available QED (p‐type) (Sun Nuclear Corporation), are studied. We compared correction factors for TSDs, field sizes, and wedges. Our results are consistent with the theory of radiation damage of silicon diodes. Radiation damage has been shown to be more serious for n‐type than for p‐type detectors. In general, both types of diode dosimeters require correction factors depending on beam energy, TSD, field size, and wedge. The magnitudes of corrections for QED (p‐type) diodes are smaller than ISORAD detectors. PACS number(s): 87.66.–a, 87.52.–g PMID:11674824

Proton-irradiation technology for high-frequency high-current silicon welding diode manufacturing

NASA Astrophysics Data System (ADS)

Lagov, P. B.; Drenin, A. S.; Zinoviev, M. A.

2017-05-01

Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery “snap-less” behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon diode with such parameters is very suitable for high frequency resistance welding machines of new generation for robotic welding.

Limitations of silicon diodes for clinical electron dosimetry.

PubMed

Song, Haijun; Ahmad, Munir; Deng, Jun; Chen, Zhe; Yue, Ning J; Nath, Ravinder

2006-01-01

This work investigates the relevance of several factors affecting the response of silicon diode dosemeters in depth-dose scans of electron beams. These factors are electron energy, instantaneous dose rate, dose per pulse, photon/electron dose ratio and electron scattering angle (directional response). Data from the literature and our own experiments indicate that the impact of these factors may be up to +/-15%. Thus, the different factors would have to cancel out perfectly at all depths in order to produce true depth-dose curves. There are reports of good agreement between depth-doses measured with diodes and ionisation chambers. However, our measurements with a Scantronix electron field detector (EFD) diode and with a plane-parallel ionisation chamber show discrepancies both in the build-up and in the low-dose regions, with a ratio up to 1.4. Moreover, the absolute sensitivity of two diodes of the same EFD model was found to differ by a factor of 3, and this ratio was not constant but changed with depth between 5 and 15% in the low-dose regions of some clinical electron beams. Owing to these inhomogeneities among diodes even of the same model, corrections for each factor would have to be diode-specific and beam-specific. All these corrections would have to be determined using parallel plane chambers, as recommended by AAPM TG-25, which would be unrealistic in clinical practice. Our conclusion is that in general diodes are not reliable in the measurement of depth-dose curves of clinical electron beams.

Experimental transconjunctival diode laser retinal photocoagulation through silicone scleral exoplants.

PubMed

Nanda, S K; Han, D P

1995-07-01

To study the feasibility of inducing a chorioretinal lesion under a previously placed scleral buckle by experimental transconjunctival diode laser photocoagulation. We performed transconjunctival diode laser photocoagulation in the peripheral retinas of seven pigmented rabbit eyes with a silicone exoplant (No. 42 band or No. 276 tire) and seven eyes without an exoplant. Each eye received burns with an intensity of grades 1 to 3 in different quadrants at varying power levels, with a 0.5-second duration and 650-micron spot size. Eyes were enucleated for histopathologic studies 1 day and 1 week after treatment. Although the irradiance emitted through the No. 42 band and the No. 276 tire was attenuated by 17% and 23%, respectively, the range of threshold powers needed to produce grades 1 to 3 burns was similar between eyes with and without a silicone exoplant. At 1 day, full-thickness coagulative necrosis was observed in all lesions, except that the ganglion cell layer and inner nuclear layer were preserved in two of four grade 1 burns and the ganglion cell layer was intact in one of six grade 2 burns. Inner scleral changes were noted acutely in three of five grade 3 lesions. At 1 week, burns of all intensity grades showed a full-thickness atrophic chorioretinal lesion with inner scleral changes. Experimental transconjunctival diode laser photocoagulation through hard silicone elements reproducibly created a chorioretinal lesion with histopathologic findings similar to those of lesions obtained without these elements. Although retinal photocoagulative effects were prominent, inner scleral abnormalities were also observed histologically.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode.

PubMed

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-06-30

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current-voltage (I-V) measurements. Nonlinear and rectifying I-V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.

The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

PubMed Central

Chang, Wen-Chung; Su, Sheng-Chien; Wu, Chia-Ching

2016-01-01

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions. PMID:28773656

Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

PubMed

Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

2009-08-01

Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

Advances in 750 nm VECSELs (Conference Presentation)

NASA Astrophysics Data System (ADS)

Saarinen, Esa J.; Ranta, Sanna; Lyytikäinen, Jari; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Guina, Mircea

2017-03-01

Lasers operating in the transmission window of tissue at wavelengths between 700 and 800 nm are needed in numerous medical and biomedical applications, including photodynamic therapy and fluorescence microscopy. However, the performance of diode lasers in this spectral range is limited by the lack of appropriate compound semiconductors. Here, we review our recent research on 750 nm VECSELs. Two approaches to reaching the 750 nm wavelength will be discussed. The first approach relies on intra-cavity frequency doubling a wafer-fused 1500 nm VECSEL. The VECSEL gain chip comprises a GaAs-based DBR and an InP-based gain section, which allows for optical pumping with low-cost commercial diodes at 980 nm. With this scheme we have achieved watt-level output powers and tuning of the laser wavelength over a 40 nm band at around 750 nm. The second approach is direct emission at 750 nm using the AlGaAs/GaAs material system. In this approach visible wavelengths are required for optical pumping. However, the consequent higher costs compared to pumping at 980 nm are mitigated by the more compact laser setup and prospects of doubling the frequency to the ultraviolet range.

Commissioning a p-type silicon diode for use in clinical electron beams.

PubMed

Eveling, J N; Morgan, A M; Pitchford, W G

1999-01-01

Commissioning measurements were carried out on a p-type silicon diode detector for use in patient monitoring in high energy electron beams. Characteristics specific to the diode were examined. The variation in diode sensitivity with dose per pulse was found to be less than 1% over a range 0.069-0.237 mGy/pulse. The diode exhibited a sensitivity variation with accumulated dose of 10% per kGy and a sensitivity variation with surface temperature of 0.26%/degree C. The dependence of the diode response on the direction of the incident electron beam was investigated. Results were found to exceed the manufacturer's specifications. Output factors measured with the diode agree to within 1.5% of those measured with an NACP-02 air ionization chamber. The detector showed a variation in response with energy of 0.8% over the energy range 4-15 MeV. Prior to introducing the diode into clinical use, an assessment of beam perturbation directly behind the diode was made. The maximum reduction in local dose directly behind the diode at a depth of 1.0 cm below the surface was approximately 13% at 4 and 15 MeV.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

PubMed

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Development of a silicon diode detector for skin dosimetry in radiotherapy.

PubMed

Vicoroski, Nikolina; Espinoza, Anthony; Duncan, Mitchell; Oborn, Bradley M; Carolan, Martin; Metcalfe, Peter; Menichelli, David; Perevertaylo, Vladimir L; Lerch, Michael L F; Rosenfeld, Anatoly B; Petasecca, Marco

2017-10-01

The aim of in vivo skin dosimetry was to measure the absorbed dose to the skin during radiotherapy, when treatment planning calculations cannot be relied on. It is of particularly importance in hypo-fractionated stereotactic modalities, where excessive dose can lead to severe skin toxicity. Currently, commercial diodes for such applications are with water equivalent depths ranging from 0.5 to 0.8 mm. In this study, we investigate a new detector for skin dosimetry based on a silicon epitaxial diode, referred to as the skin diode. The skin diode is manufactured on a thin epitaxial layer and packaged using the "drop-in" technology. It was characterized in terms of percentage depth dose, dose linearity, and dose rate dependence, and benchmarked against the Attix ionization chamber. The response of the skin diode in the build-up region of the percentage depth dose (PDD) curve of a 6 MV clinical photon beam was investigated. Geant4 radiation transport simulations were used to model the PDD in order to estimate the water equivalent measurement depth (WED) of the skin diode. Measured output factors using the skin diode were compared with the MOSkin detector and EBT3 film at 10 cm depth and at surface at isocenter of a water equivalent phantom. The intrinsic angular response of the skin diode was also quantified in charge particle equilibrium conditions (CPE) and at the surface of a solid water phantom. Finally, the radiation hardness of the skin diode up to an accumulated dose of 80 kGy using photons from a Co-60 gamma source was evaluated. The PDD curve measured with the skin diode was within 0.5% agreement of the equivalent Geant4 simulated curve. When placed at the phantom surface, the WED of the skin diode was estimated to be 0.075 ± 0.005 mm from Geant4 simulations and was confirmed using the response of a corrected Attix ionization chamber placed at water equivalent depth of 0.075 mm, with the measurement agreement to within 0.3%. The output factor measurements at

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2004-12-07

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process For Direct Integration Of A Thin-Film Silicon P-N Junction Diode With A Magnetic Tunnel Junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2005-08-23

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction

DOEpatents

Toet, Daniel; Sigmon, Thomas W.

2003-01-01

A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.

Evaluation of a silicon 5 MHz p–n diode actuator with a laterally vibrating extensional mode

NASA Astrophysics Data System (ADS)

Miyazaki, Fumito; Baba, Kazuki; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-05-01

In this paper, we describe p–n diode actuators that are laterally driven by the force induced in a depletion layer. The previously reported p–n diode actuators have been vertically driven. Because the resonant frequency depends on the thickness of the vibrating plate, the integration of resonators with different frequencies on a chip has been difficult. The resonators in this work are driven laterally by using length-extensional vibration. We have developed a compact model based on an analytical expression, in which p–n diode actuators are driven by the forces induced by the spread of the depletion layer. The deflection generated by the p–n diode actuators was proportional to the ratio of the depletion layer width to the resonator thickness as well as the position of the p–n junction. Good agreement of experimental results with the theory was confirmed by comparing the measured values for silicon p–n diode rectangular-plate actuators fabricated using a silicon-on-insulator (SOI) substrate. The displacement amplitude of the actuators was proportional to the DC bias, while the resonant frequency was independent of the DC bias. The latter characteristic is very different from that of widely used electrostatic actuators. Although the amplitude of the actuator measured in this work was very small, it is expected that the amplitude will increase greatly by increasing the doping of the p–n diode actuators.

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

NASA Technical Reports Server (NTRS)

Kuczmarski, Maria A.; Neudeck, Philip G.

2000-01-01

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three

Numerical modeling of reverse recovery characteristic in silicon pin diodes

NASA Astrophysics Data System (ADS)

Yamashita, Yusuke; Tadano, Hiroshi

2018-07-01

A new numerical reverse recovery model of silicon pin diode is proposed by the approximation of the reverse recovery waveform as a simple shape. This is the first model to calculate the reverse recovery characteristics using numerical equations without adjusted by fitting equations and fitting parameters. In order to verify the validity and the accuracy of the numerical model, the calculation result from the model is verified through the device simulation result. In 1980, he joined Toyota Central R&D Labs, Inc., where he was involved in the research and development of power devices such as SIT, IGBT, diodes and power MOSFETs. Since 2013 he has been a professor at the Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Japan. His current research interest is high-efficiency power conversion circuits for electric vehicles using advanced power devices.

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Design of a broadband reciprocal optical diode in multimode silicon waveguide by partial depth etching

NASA Astrophysics Data System (ADS)

Zhu, Danfeng; Zhang, Jinqiannan; Ye, Han; Yu, Zhongyuan; Liu, Yumin

2018-07-01

We propose a design of reciprocal optical diode based on asymmetric spatial mode conversion in multimode silicon waveguide on the silicon-on-insulator platform. The design possesses large bandwidth, high contrast ratio and high fabrication tolerance. The forward even-to-odd mode conversion and backward blockade of even mode are achieved by partial depth etching in the functional region. Simulated by three-dimension finite-difference time-domain method, the forward transmission efficiency is about -2.05 dB while the backward transmission efficiency is only -22.68 dB, reaching a highest contrast ratio of 0.983 at the wavelength of 1550 nm. The operational bandwidth is up to 200 nm (from 1450 nm to 1650 nm) with contrast ratio higher than 0.911. The numerical analysis also demonstrates that the proposed optical diode possesses high tolerance for geometry parameter errors which may be introduced in fabrication. The design based on partial depth etching is compatible with CMOS process and is expected to contribute to the silicon-based all-optical circuits.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams.

PubMed

Griessbach, Irmgard; Lapp, Markus; Bohsung, Jörg; Gademann, Günther; Harder, Dietrich

2005-12-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield.

Various vibration modes in a silicon ring resonator driven by p–n diode actuators formed in the lateral direction

NASA Astrophysics Data System (ADS)

Tsushima, Takafumi; Asahi, Yoichi; Tanigawa, Hiroshi; Furutsuka, Takashi; Suzuki, Kenichiro

2018-06-01

In this paper, we describe p–n diode actuators that are formed in the lateral direction on resonators. Because previously reported p–n diode actuators, which were driven by a force parallel to the electrostatic force induced in a p–n diode, were fabricated in the perpendicular direction to the surface, the fabrication process to satisfy the requirement of realizing a p–n junction set in the middle of the plate thickness has been difficult. The resonators in this work are driven by p–n diodes formed in the lateral direction, making the process easy. We have fabricated a silicon ring resonator that has in-plane vibration using p–n–p and n–p–n diode actuators formed in the lateral direction. First, we consider a space charge model that can sufficiently accurately describe the force induced in p–n diode actuators and compare it with the capacitance model used in most computer simulations. Then, we show that multiplying the vibration amplitude calculated by computer simulation by the modification coefficient of 4/3 provides the vibration amplitude in the p–n diode actuators. Good agreement of the theory with experimental results of the in-plane vibration measured for silicon ring resonators is obtained. The computer simulation is very useful for evaluating various vibration modes in resonators driven by the p–n diode actuators. The small amplitude of the p–n diode actuator measured in this work is expected to increase greatly with increased doping of the actuator.

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1974-01-01

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

The Novel Preparation of P-N Junction Mesa Diodes by Silicon-Wafer Direct Bonding (SDB)

NASA Astrophysics Data System (ADS)

Yeh, Ching-Fa; Hwangleu, Shyang

1992-05-01

The key processes of silicon-wafer direct bonding (SDB), including hydrophilic surface formation and optimal two-step heat treatment, have been developed However, H2SO4/H2O2 solution being a strong oxidized acid solution, native oxide is found to have grown on the wafer surface as soon as a wafer is treated in this solution. In the case of a wafer further treated in diluted HF solution after hydrophilic surface formation, it is shown that the wafer surface can not only be cleaned of its native oxide but also remains hydrophilic, and can provide excellent voidless bonding. The N+/P and N/P combination junction mesa diodes fabricated on the wafers prepared by these novel SDB technologies are examined. The ideality factor n of the N/P mesa diode is 2.4˜2.8 for the voltage range 0.2˜0.3 V; hence, the lowering of the ideality factor n is evidently achieved. As for the N+/P mesa diode, the ideality factor n shows a value of 1.10˜1.30 for the voltage range 0.2˜0.6 V; the low value of n is attributed to an autodoping phenomenon which has caused the junction interface to form in the P-silicon bulk. However, the fact that the sustaining voltage of the N/P mesa diode showed a value greater than 520 V reveals the effectiveness of our novel SDB processes.

40 Gbit/s low-loss silicon optical modulator based on a pipin diode.

PubMed

Ziebell, Melissa; Marris-Morini, Delphine; Rasigade, Gilles; Fédéli, Jean-Marc; Crozat, Paul; Cassan, Eric; Bouville, David; Vivien, Laurent

2012-05-07

40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

NASA Technical Reports Server (NTRS)

Been, J. F.

1973-01-01

The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

PubMed

Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

2011-10-01

This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

Optimizing photon-pair generation electronically using a p-i-n diode incorporated in a silicon microring resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Kumar, Ranjeet; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

Silicon photonic microchips may be useful for compact, inexpensive, room-temperature optically pumped photon-pair sources, which unlike conventional photon-pair generators based on crystals or optical fibers, can be manufactured using CMOS-compatible processes on silicon wafers. It has been shown that photon pairs can be created in simple structures such as microring resonators at a rate of a few hundred kilohertz using less than a milliwatt of optical pump power, based on the process of spontaneous four-wave mixing. To create a practical photon-pair source, however, also requires some way of monitoring the device and aligning the pump wavelength when the temperature varies,more » since silicon resonators are highly sensitive to temperature. In fact, monitoring photodiodes are standard components in classical laser diodes, but the incorporation of germanium or InGaAs photodiodes would raise the cost and fabrication complexity. Here, we present a simple and effective all-electronic technique for finding the optimum operating point for the microring used to generate photon pairs, based on measuring the reverse-biased current in a silicon p-i-n junction diode fabricated across the waveguide that constitutes the silicon microring. We show that by monitoring the current, and using it to tune the pump laser wavelength, the photon-pair generation properties of the microring can be preserved over a temperature range of more than 30 °C.« less

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Monte Carlo simulation of the dose response of a novel 2D silicon diode array for use in hybrid MRI-LINAC systems.

PubMed

Gargett, Maegan; Oborn, Brad; Metcalfe, Peter; Rosenfeld, Anatoly

2015-02-01

MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named "magic plate," for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. geant4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-line and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm(3)) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm(2) area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm(2) photon field size. The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed MRI-linear accelerator systems. In the in-line orientation, the

A theoretical analysis of steady-state photocurrents in simple silicon diodes

NASA Technical Reports Server (NTRS)

Edmonds, L.

1995-01-01

A theoretical analysis solves for the steady-state photocurrents produced by a given photo-generation rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called 'substrate' below) adjacent to a p-n junction depletion region (DR). Special attention is given to conditions that produce 'funneling' (a term used by the single-eventeffects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage, plus built-in potential normally across the DR, is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. First, it was found that funneling can be induced from a distance, i.e., from carriers generated at locations outside of the DR. Secondly, it was found that the substrate can divide into two subregions, with one controlling substrate resistance and the other characterized by ambipolar diffusion. Finally, funneling was found to be more difficult to induce in the p(sup +)/n diode than in the n(sup +)/p diode. The carrier density exceeding the doping density in the substrate and at the DR boundary is not a sufficient condition to collapse a DR.

Whiskerless Schottky diode

NASA Technical Reports Server (NTRS)

Bishop, William L. (Inventor); Mcleod, Kathleen A. (Inventor); Mattauch, Robert J. (Inventor)

1991-01-01

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Monte Carlo simulation of the dose response of a novel 2D silicon diode array for use in hybrid MRI–LINAC systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gargett, Maegan, E-mail: mg406@uowmail.edu.au; Rosenfeld, Anatoly; Oborn, Brad

2015-02-15

Purpose: MRI-guided radiation therapy systems (MRIgRT) are being developed to improve online imaging during treatment delivery. At present, the operation of single point dosimeters and an ionization chamber array have been characterized in such systems. This work investigates a novel 2D diode array, named “magic plate,” for both single point calibration and 2D positional performance, the latter being a key element of modern radiotherapy techniques that will be delivered by these systems. Methods: GEANT4 Monte Carlo methods have been employed to study the dose response of a silicon diode array to 6 MV photon beams, in the presence of in-linemore » and perpendicularly aligned uniform magnetic fields. The array consists of 121 silicon diodes (dimensions 1.5 × 1.5 × 0.38 mm{sup 3}) embedded in kapton substrate with 1 cm pitch, spanning a 10 × 10 cm{sup 2} area in total. A geometrically identical, water equivalent volume was simulated concurrently for comparison. The dose response of the silicon diode array was assessed for various photon beam field shapes and sizes, including an IMRT field, at 1 T. The dose response was further investigated at larger magnetic field strengths (1.5 and 3 T) for a 4 × 4 cm{sup 2} photon field size. Results: The magic plate diode array shows excellent correspondence (< ± 1%) to water dose in the in-line orientation, for all beam arrangements and magnetic field strengths investigated. The perpendicular orientation, however, exhibits a dose shift with respect to water at the high-dose-gradient beam edge of jaw-defined fields [maximum (4.3 ± 0.8)% over-response, maximum (1.8 ± 0.8)% under-response on opposing side for 1 T, uncertainty 1σ]. The trend is not evident in areas with in-field dose gradients typical of IMRT dose maps. Conclusions: A novel 121 pixel silicon diode array detector has been characterized by Monte Carlo simulation for its performance inside magnetic fields representative of current prototype and proposed

Dead layer on silicon p-i-n diode charged-particle detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wall, B. L.; Amsbaugh, John F.; Beglarian, A.

Abstract Semiconductor detectors in general have a dead layer at their surfaces that is either a result of natural or induced passivation, or is formed during the process of making a contact. Charged particles passing through this region produce ionization that is incompletely collected and recorded, which leads to departures from the ideal in both energy deposition and resolution. The silicon p-i-n diode used in the KATRIN neutrinomass experiment has such a dead layer. We have constructed a detailed Monte Carlo model for the passage of electrons from vacuum into a silicon detector, and compared the measured energy spectra tomore » the predicted ones for a range of energies from 12 to 20 keV. The comparison provides experimental evidence that a substantial fraction of the ionization produced in the "dead" layer evidently escapes by discussion, with 46% being collected in the depletion zone and the balance being neutralized at the contact or by bulk recombination. The most elementary model of a thinner dead layer from which no charge is collected is strongly disfavored.« less

Bypass diode integration

NASA Technical Reports Server (NTRS)

Shepard, N. F., Jr.

1981-01-01

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior

NASA Astrophysics Data System (ADS)

Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor

2017-11-01

We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

Characterization of Lateral Structure of the p-i-n Diode for Thin-Film Silicon Solar Cell.

PubMed

Kiaee, Zohreh; Joo, Seung Ki

2018-03-01

The lateral structure of the p-i-n diode was characterized for thin-film silicon solar cell application. The structure can benefit from a wide intrinsic layer, which can improve efficiency without increasing cell thickness. Compared with conventional thin-film p-i-n cells, the p-i-n diode lateral structure exploited direct light irradiation on the absorber layer, one-side contact, and bifacial irradiation. Considering the effect of different carrier lifetimes and recombinations, we calculated efficiency parameters by using a commercially available simulation program as a function of intrinsic layer width, as well as the distance between p/i or n/i junctions to contacts. We then obtained excellent parameter values of 706.52 mV open-circuit voltage, 24.16 mA/Cm2 short-circuit current, 82.66% fill factor, and 14.11% efficiency from a lateral cell (thickness = 3 μm; intrinsic layer width = 53 μm) in monofacial irradiation mode (i.e., only sunlight from the front side was considered). Simulation results of the cell without using rear-side reflector in bifacial irradiation mode showed 11.26% front and 9.72% rear efficiencies. Our findings confirmed that the laterally structured p-i-n cell can be a potentially powerful means for producing highly efficient, thin-film silicon solar cells.

Demonstration of SiC Pressure Sensors at 750 C

NASA Technical Reports Server (NTRS)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2014-01-01

We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose.

PubMed

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-30

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm(2), a current rectification ratio up to 4 × 10(3) between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

PubMed Central

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-01-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits. PMID:27357006

Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

NASA Astrophysics Data System (ADS)

Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

2016-06-01

Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

Research and Development of Silicon Carbide (SiC) Junction Recovery Diodes for Picosecond Range, High Power Opening Switches

NASA Astrophysics Data System (ADS)

Grekhov, Igor V.

2002-07-01

This report results from a contract tasking Ioffe Institute as follows: The purpose of the proposed project is to develop, fabricate, test, and characterize silicon carbide power semiconductor opening switches operating in the picosecond range of switch time. Special SiC diode structures will be fabricated and investigated, including Junction Recovery Diodes (JRD). The operation of such diodes is founded on the superfast recovery of the junction's blocking ability after switching the device from forward to reverse bias conditions. Our estimations show that the parameters of JRD devices can be substantially improved in case of SiC devices, compared to both Si and GaAs capabilities. We expect i) to increase the speed of switch operation, the specific commutated power, and the operation frequency repetition; ii) to reduce the weight and size of pulse devices; and iii) to achieve better reliability of the devices due to the unique thermal conductivity and radiation hardness of SiC.

Organic Light-Emitting Diode-on-Silicon Pixel Circuit Using the Source Follower Structure with Active Load for Microdisplays

NASA Astrophysics Data System (ADS)

Kwak, Bong-Choon; Lim, Han-Sin; Kwon, Oh-Kyong

2011-03-01

In this paper, we propose a pixel circuit immune to the electrical characteristic variation of organic light-emitting diodes (OLEDs) for organic light-emitting diode-on-silicon (OLEDoS) microdisplays with a 0.4 inch video graphics array (VGA) resolution and a 6-bit gray scale. The proposed pixel circuit is implemented using five p-channel metal oxide semiconductor field-effect transistors (MOSFETs) and one storage capacitor. The proposed pixel circuit has a source follower with a diode-connected transistor as an active load for improving the immunity against the electrical characteristic variation of OLEDs. The deviation in the measured emission current ranges from -0.165 to 0.212 least significant bit (LSB) among 11 samples while the anode voltage of OLED is 0 V. Also, the deviation in the measured emission current ranges from -0.262 to 0.272 LSB in pixel samples, while the anode voltage of OLED varies from 0 to 2.5 V owing to the electrical characteristic variation of OLEDs.

Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

NASA Astrophysics Data System (ADS)

Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

2010-03-01

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

25-Gb/s broadband silicon modulator with 0.31-V·cm VπL based on forward-biased PIN diodes embedded with passive equalizer.

PubMed

Baba, Takeshi; Akiyama, Suguru; Imai, Masahiko; Usuki, Tatsuya

2015-12-28

We investigated the broadband operations of a silicon Mach-Zehnder modulator (MZM) based on a forward-biased-PIN diode. The phase shifter was integrated with a passive-circuit equalizer to compensate for the narrowband characteristics of the diodes, which consists of a simple resistance of doped silicon and a parallel-plate metal capacitance. The device structure was simple and fabricated using standard CMOS processes. The measured results for a 50-Ω driver indicated there was a small VπL of 0.31 V·cm and a flat frequency response for a 3-dB bandwidth (f(3dB)) of 17 GHz, which agree well with the designed values. A 25-Gb/s large-signal operation was obtained using binary signals without pre-emphasis. The modulator showed a linear modulation property to the applied voltage, due to the metal capacitance of the equalizer.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

NASA Technical Reports Server (NTRS)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

NASA Technical Reports Server (NTRS)

Toftul, Alexandra; Polzin, Kurt A.; Martin, Adam K.; Hudgins, Jerry L.

2014-01-01

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

SiC-Based Schottky Diode Gas Sensors

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, Dak; Liu, Chung-Chiun; Wu, Quing-Hai

1997-01-01

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

JAN transistor and diode characterization test program, JANTX diode 1N5619

NASA Technical Reports Server (NTRS)

Takeda, H.

1977-01-01

A statistical summary of electrical characterization was performed on JANTX 1N5619 silicon diodes. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point, and highest reading.

Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

2017-10-01

We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

Monte Carlo study of si diode response in electron beams.

PubMed

Wang, Lilie L W; Rogers, David W O

2007-05-01

Silicon semiconductor diodes measure almost the same depth-dose distributions in both photon and electron beams as those measured by ion chambers. A recent study in ion chamber dosimetry has suggested that the wall correction factor for a parallel-plate ion chamber in electron beams changes with depth by as much as 6%. To investigate diode detector response with respect to depth, a silicon diode model is constructed and the water/silicon dose ratio at various depths in electron beams is calculated using EGSnrc. The results indicate that, for this particular diode model, the diode response per unit water dose (or water/diode dose ratio) in both 6 and 18 MeV electron beams is flat within 2% versus depth, from near the phantom surface to the depth of R50 (with calculation uncertainty <0.3%). This suggests that there must be some other correction factors for ion chambers that counter-balance the large wall correction factor at depth in electron beams. In addition, the beam quality and field-size dependence of the diode model are also calculated. The results show that the water/diode dose ratio remains constant within 2% over the electron energy range from 6 to 18 MeV. The water/diode dose ratio does not depend on field size as long as the incident electron beam is broad and the electron energy is high. However, for a very small beam size (1 X 1 cm(2)) and low electron energy (6 MeV), the water/diode dose ratio may decrease by more than 2% compared to that of a broad beam.

Monte Carlo-based diode design for correction-less small field dosimetry.

PubMed

Charles, P H; Crowe, S B; Kairn, T; Knight, R T; Hill, B; Kenny, J; Langton, C M; Trapp, J V

2013-07-07

Due to their small collecting volume, diodes are commonly used in small field dosimetry. However, the relative sensitivity of a diode increases with decreasing small field size. Conversely, small air gaps have been shown to cause a significant decrease in the sensitivity of a detector as the field size is decreased. Therefore, this study uses Monte Carlo simulations to look at introducing air upstream to diodes such that they measure with a constant sensitivity across all field sizes in small field dosimetry. Varying thicknesses of air were introduced onto the upstream end of two commercial diodes (PTW 60016 photon diode and PTW 60017 electron diode), as well as a theoretical unenclosed silicon chip using field sizes as small as 5 mm × 5 mm. The metric D(w,Q)/D(Det,Q) used in this study represents the ratio of the dose to a point of water to the dose to the diode active volume, for a particular field size and location. The optimal thickness of air required to provide a constant sensitivity across all small field sizes was found by plotting D(w,Q)/D(Det,Q) as a function of introduced air gap size for various field sizes, and finding the intersection point of these plots. That is, the point at which D(w,Q)/D(Det,Q) was constant for all field sizes was found. The optimal thickness of air was calculated to be 3.3, 1.15 and 0.10 mm for the photon diode, electron diode and unenclosed silicon chip, respectively. The variation in these results was due to the different design of each detector. When calculated with the new diode design incorporating the upstream air gap, k(f(clin),f(msr))(Q(clin),Q(msr)) was equal to unity to within statistical uncertainty (0.5%) for all three diodes. Cross-axis profile measurements were also improved with the new detector design. The upstream air gap could be implanted on the commercial diodes via a cap consisting of the air cavity surrounded by water equivalent material. The results for the unclosed silicon chip show that an ideal small

Lumen degradation and chromaticity shift in glass and silicone based high-power phosphor-converted white-emitting diodes under thermal tests

NASA Astrophysics Data System (ADS)

Cheng, Wood-Hi; Tsai, Chun-Chin; Wang, Jimmy

2011-10-01

The lumen degradation and chromaticity shift in glass and silicone based high-power phosphor-converted white-emitting diodes (PC-WLEDs) under accelerated thermal tests at 150°C, 200°C, and 250°C are presented and compared. The glass based PC-WLEDs exhibited better thermal stability than the silicone by 4.8 time reductions in lumen loss 6.8 time reductions in chromaticity shift at 250°C, respectively. The mean-time-to-failure (MTTF) evaluation of glass and silicone based high-power PC-WLEDs in accelerated thermal tests is also presented and compared. The results showed that the glass based PC-WLEDs exhibited higher MTTF than the silicone by 7.53 times in lumen loss and 14.4 times in chromaticity shift at 250°C, respectively. The thermal performance of lumen, chromaticity, and MTTF investigations demonstrated that the thermal stability of the glass based PC-WLEDs were better than the silicone. A better thermal stability phosphor layer of glass as encapsulation material may be beneficial to the many applications where the LED modules with high power and high reliability are demanded.

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

DOE PAGES

Zhu, Mingda; Song, Bo; Qi, Meng; ...

2015-02-16

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance R ON,SP (5.12 mΩ · cm 2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/R ON,SP of 727 MW·cm 2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer

NASA Astrophysics Data System (ADS)

An, Yanbin; Behnam, Ashkan; Pop, Eric; Bosman, Gijs; Ural, Ant

2015-09-01

Metal-semiconductor Schottky junction devices composed of chemical vapor deposition grown monolayer graphene on p-type silicon substrates are fabricated and characterized. Important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance, are extracted from forward bias current-voltage characteristics using a previously established method modified to take into account the interfacial native oxide layer present at the graphene/silicon junction. It is found that the ideality factor can be substantially increased by the presence of the interfacial oxide layer. Furthermore, low frequency noise of graphene/silicon Schottky junctions under both forward and reverse bias is characterized. The noise is found to be 1/f dominated and the shot noise contribution is found to be negligible. The dependence of the 1/f noise on the forward and reverse current is also investigated. Finally, the photoresponse of graphene/silicon Schottky junctions is studied. The devices exhibit a peak responsivity of around 0.13 A/W and an external quantum efficiency higher than 25%. From the photoresponse and noise measurements, the bandwidth is extracted to be ˜1 kHz and the normalized detectivity is calculated to be 1.2 ×109 cm Hz1/2 W-1. These results provide important insights for the future integration of graphene with silicon device technology.

High-sensitive computed tomography system using a silicon-PIN x-ray diode

NASA Astrophysics Data System (ADS)

Sato, Eiichi; Sato, Yuich; Abudurexiti, Abulajiang; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2012-10-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of 1.91 mA was developed using a silicon-PIN X-ray diode (Si-PIN-XD). The Si-PIN-XD is a selected high-sensitive Si-PIN photodiode (PD) for detecting X-ray photons. X-ray photons are detected directly using the Si-PIN-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to differentiator with a time constant of 1 μs to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 1.91 mA and 100 kV, respectively, and gadolinium K-edge CT was carried out using filtered X-ray spectra with a peak energy of 52 keV.

Failure Analysis to Identify Thermal Runaway of Bypass Diodes in Fielded Modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao, Uchida, Yasunori; Johnston, Steve; Hacke, Peter

We studied a bypass diode recuperated from fielded modules in a rooftop installation to determine the failure mechanism. The field-failed diode showed similar characteristics to thermal runaway, specifically X-ray tomography evidence of migrated metal. We also observed burn marks on the silicon surface like those lab-stressed for thermal runaway. Reaction products are more soluble than silicon and the surface is oxygen rich.

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

Diode laser heterodyne observations of silicon monoxide in sunspots - A test of three sunspot models

NASA Technical Reports Server (NTRS)

Glenar, D. A.; Deming, D.; Jennings, D. E.; Kostiuk, T.; Mumma, M. J.

1983-01-01

Absorption features from the 8 micron SiO fundamental (upsilon = 1-0) and hot bands (upsilon = 2-1) have been observed in sunspots at sub-Doppler resolution using a ground-based tunable diode laser heterodyne spectrometer. The observed line widths suggest an upper limit of 0.5 km/s for the microturbulent velocity in sunspot umbrae. Since the silicon monoxide abundance is very sensitive to sunspot temperature, the measured equivalent widths permit an unambiguous determination of the temperature-pressure relation in the upper layers of the umbral atmosphere. In the region of SiO line formation (log P sub g = 3.0-4.5), the results support the sunspot model suggested by Stellmacher and Wiehr (1970).

Cr-Si Schottky nano-diodes utilizing anodic aluminum oxide templates.

PubMed

Kwon, Namyong; Kim, Kyohyeok; Heo, Jinhee; Chung, Ilsub

2014-04-01

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. The diameters of the diodes were 75.0, 57.6, and 35.8 nm. Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters due to an enhanced tunnel current contribution, which is attributed to a reduction in the barrier thickness. The diameters of Cr nanodots smaller than the Debye length (156 nm) play an important role in the reduction of barrier thickness. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, wemore » generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.« less

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

NASA Astrophysics Data System (ADS)

Savanier, Marc; Mookherjea, Shayan

2016-06-01

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

Silicon Carbide-Based Hydrogen and Hydrocarbon Gas Detection

NASA Technical Reports Server (NTRS)

Hunter, Gary W.; Neudeck, Philip G.; Chen, Liang-Yu; Knight, D.; Liu, C. C.; Wu, Q. H.R

1995-01-01

Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

PubMed

Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

2012-08-17

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications.

Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

PubMed Central

2012-01-01

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

PubMed Central

Wyrsch, Nicolas; Choong, Gregory; Miazza, Clément; Ballif, Christophe

2008-01-01

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. PMID:27873778

Digital Rise-Time Discrimination of Pulses from the Tigress Integrated Plunger Silicon PIN Diode Wall

NASA Astrophysics Data System (ADS)

Voss, P.; Henderson, R.; Andreoiu, C.; Ashley, R.; Ball, G. C.; Bender, P. C.; Chester, A.; Cross, D. S.; Drake, T. E.; Garnsworthy, A. B.; Hackman, G.; Ketelhut, S.; Krücken, R.; Miller, D.; Rajabali, M. M.; Starosta, K.; Svensson, C. E.; Tardiff, E.; Unsworth, C.; Wang, Z.-M.

Electromagnetic transition rate measurements play an important role in characterizing the evolution of nuclear structure with increasing proton-neutron asymmetry. At TRIUMF, the TIGRESS Integrated Plunger device and its suite of ancillary detector systems have been implemented for charged-particle tagging and light-ion identification in coincidence with gamma-ray spectroscopy for Doppler-shift lifetime studies and low-energy Coulomb excitation measurements. Digital pulse-shape analysis of signals from these ancillary detectors for particle identification improves the signal-to-noise ratio of gamma-ray energy spectra. Here, we illustrate the reaction-channel selectivity achieved by utilizing digital rise-time discrimination of waveforms from alpha particles and carbon ions detected with silicon PIN diodes, thereby enhancing gamma-ray line-shape signatures for precision lifetime studies.

Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

PubMed Central

Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

2014-01-01

Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

Laterally stacked Schottky diodes for infrared sensor applications

NASA Technical Reports Server (NTRS)

Lin, True-Lon (Inventor)

1991-01-01

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

NASA Astrophysics Data System (ADS)

Lim, Daniel J.; Ki, Hyungson; Mazumder, Jyoti

2006-06-01

A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 108-109 W cm-2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases.

Pulse power applications of silicon diodes in EML capacitive pulsers

NASA Astrophysics Data System (ADS)

Dethlefsen, Rolf; McNab, Ian; Dobbie, Clyde; Bernhardt, Tom; Puterbaugh, Robert; Levine, Frank; Coradeschi, Tom; Rinaldi, Vito

1993-01-01

Crowbar diodes are used for increasing the energy transfer from capacitive pulse forming networks. They also prevent voltage reversal on the energy storage capacitors. 52 mm diameter diodes with a 5 kV reverse blocking voltage, rated 40 kA were successfully used for the 32 MJ SSG rail gun. An uprated diode with increased current capability and a 15 kV reverse blocking voltage has been developed. Transient thermal analysis has predicted the current ratings for different pulse length. Analysis verification is obtained from destructive testing.

Investigation of silicon surface passivation by silicon nitride film deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

The use of Sin sub x grown by plasma enhanced chemical vapor deposition (PECVO) for passivating silicon surfaces was studied. The application of PECVO SiN sub x films for passivations of silicon N+/P or P+/N solar cells is of particular interest. This program has involved the following areas of investigation: (1) Establishment of PECVO system and development of procedures for growth of SiN sub x; (2) Optical characterization of SiN sub x films; (3) Characterization of the SiN sub x/Si interface; (4) Surface recombination velocity deduced from photoresponse; (5) Current-Voltage analyses of silicon N+/P cells; and (6) Gated diode device studies.

Silicon carbide semiconductor technology for high temperature and radiation environments

NASA Technical Reports Server (NTRS)

Matus, Lawrence G.

1993-01-01

Viewgraphs on silicon carbide semiconductor technology and its potential for enabling electronic devices to function in high temperature and high radiation environments are presented. Topics covered include silicon carbide; sublimation growth of 6H-SiC boules; SiC chemical vapor deposition reaction system; 6H silicon carbide p-n junction diode; silicon carbide MOSFET; and silicon carbide JFET radiation response.

40 CFR 750.14 - Record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Record. 750.14 Section 750.14 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT PROCEDURES... Manufacturing Exemptions § 750.14 Record. Section 750.3 shall be applicable with the exception that the words...

40 CFR 750.14 - Record.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Record. 750.14 Section 750.14 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT PROCEDURES... Manufacturing Exemptions § 750.14 Record. Section 750.3 shall be applicable with the exception that the words...

40 CFR 750.14 - Record.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Record. 750.14 Section 750.14 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT PROCEDURES... Manufacturing Exemptions § 750.14 Record. Section 750.3 shall be applicable with the exception that the words...

Neutron-irradiation creep of silicon carbide materials beyond the initial transient

DOE PAGES

Katoh, Yutai; Ozawa, Kazumi; Shimoda, Kazuya; ...

2016-06-04

Irradiation creep beyond the transient regime was investigated for various silicon carbide (SiC) materials. Here, the materials examined included polycrystalline or monocrystalline high-purity SiC, nanopowder sintered SiC, highly crystalline and near-stoichiometric SiC fibers (including Hi-Nicalon Type S, Tyranno SA3, isotopically-controlled Sylramic and Sylramic-iBN fibers), and a Tyranno SA3 fiber–reinforced SiC matrix composite fabricated through a nano-infiltration transient eutectic phase process. Neutron irradiation experiments for bend stress relaxation tests were conducted at irradiation temperatures ranging from 430 to 1180 °C up to 30 dpa with initial bend stresses of up to ~1 GPa for the fibers and ~300 MPa for themore » other materials. Initial bend stress in the specimens continued to decrease from 1 to 30 dpa. Analysis revealed that (1) the stress exponent of irradiation creep above 1 dpa is approximately unity, (2) the stress normalized creep rate is ~1 × 10 –7 [dpa –1 MPa –1] at 430–750 °C for the range of 1–30 dpa for most polycrystalline SiC materials, and (3) the effects on irradiation creep of initial microstructures—such as grain boundary, crystal orientation, and secondary phases—increase with increasing irradiation temperature.« less

A fast-neutron detection detector based on fission material and large sensitive 4H silicon carbide Schottky diode detector

NASA Astrophysics Data System (ADS)

Liu, Linyue; Liu, Jinliang; Zhang, Jianfu; Chen, Liang; Zhang, Xianpeng; Zhang, Zhongbing; Ruan, Jinlu; Jin, Peng; Bai, Song; Ouyang, Xiaoping

2017-12-01

Silicon carbide radiation detectors are attractive in the measurement of the total numbers of pulsed fast neutrons emitted from nuclear fusion and fission devices because of high neutron-gamma discrimination and good radiation resistance. A fast-neutron detection system was developed based on a large-area 4H-SiC Schottky diode detector and a 235U fission target. Excellent pulse-height spectra of fission fragments induced by mono-energy deuterium-tritium (D-T) fusion neutrons and continuous energy fission neutrons were obtained. The detector is proven to be a good candidate for pulsed fast neutron detection in a complex radiation field.

Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

PubMed

Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

2016-03-07

We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

Nanoscale cross-point diode array accessing embedded high density PCM

NASA Astrophysics Data System (ADS)

Wang, Heng; Liu, Yan; Liu, Bo; Gao, Dan; Xu, Zhen; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2017-08-01

The main bottlenecks in the development of current embedded phase change memory (PCM) technology are the current density and data storage density. In this paper, we present a PCM with 4F2 cross-point diode selector and blade-type bottom electrode contact (BEC). A blade TiN BEC with a cross-sectional area of 630 nm2 (10 nm × 63 nm) reduces the reset current down to about 750 μA. The optimized diode array could supply this 750 μA reset current at about 1.7 V and low off-current 1 × 10-4 μA at about -5.05 V. The on-off ratio of this device is 7.5 × 106. The proposed nanoscale PCM device simultaneously exhibits an operation voltage as low as 3 V and a high density drive current with an ultra small cell size of 4F2 (108 nm × 108 nm). Over 106 cycling endurance properties guarantee that it can work effectively on the embedded memory.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes

NASA Astrophysics Data System (ADS)

Buffolo, Matteo; Meneghini, Matteo; De Santi, Carlo; Trivellin, Nicola; Davenport, Michael L.; Bowers, John E.; Meneghesso, Gaudenzio; Zanoni, Enrico

2018-02-01

This paper reports on an extensive investigation on the degradation mechanisms that may limit the long term reliability of heterogeneous III-V/Silicon DBR laser diodes for integrated telecommunication applications in the 1.55 μm window. The devices under test, aged for up to 500 hours under different bias conditions, showed a gradual variation of both optical (L-I) and electrical (I-V, C-V) characteristics. In particular, the laser diodes exhibited an increase in the threshold current, a decrease of the turn-on voltage and an increase in the apparent charge density within the space-charge region, which was extrapolated from C-V measurements. For longer stress times, these two latter processes were found to be well correlated with the worsening of the optical parameters, which suggests that degradation occurred due to an increase in the density of defects within the active region, with consequent decrease in the non-radiative (SRH) lifetime. This conclusion is also supported by the fact that during stress the apparent charge profiles indicated a re-distribution of charge within the junction. A preliminary investigation on the physical origin of the defects responsible for degradation was carried out by DLTS measurements, which revealed the presence of five different deep levels, with a main trap located around 0.43 eV above the valence band energy. This trap was found to be compatible with an interface defect located between the In0.53AlxGa0.47-xAs SCH region and the InP layer.

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface.

PubMed

Lenfant, S; Guerin, D; Tran Van, F; Chevrot, C; Palacin, S; Bourgoin, J P; Bouloussa, O; Rondelez, F; Vuillaume, D

2006-07-20

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.

Silicon-mediated resistance of Arabidopsis against powdery mildew involves mechanisms other than the salicylic acid (SA)-dependent defence pathway.

PubMed

Vivancos, Julien; Labbé, Caroline; Menzies, James G; Bélanger, Richard R

2015-08-01

On absorption by plants, silicon (Si) offers protection against many fungal pathogens, including powdery mildews. The mechanisms by which Si exerts its prophylactic role remain enigmatic, although a prevailing hypothesis suggests that Si positively influences priming. Attempts to decipher Si properties have been limited to plants able to absorb Si, which excludes the model plant Arabidopsis because it lacks Si influx transporters. In this work, we were able to engineer Arabidopsis plants with an Si transporter from wheat (TaLsi1) and to exploit mutants (pad4 and sid2) deficient in salicylic acid (SA)-dependent defence responses to study their phenotypic response and changes in defence expression against Golovinomyces cichoracearum (Gc) following Si treatment. Our results showed that TaLsi1 plants contained significantly more Si and were significantly more resistant to Gc infection than control plants when treated with Si, the first such demonstration in a plant transformed with a heterologous Si transporter. The resistant plants accumulated higher levels of SA and expressed higher levels of transcripts encoding defence genes, thus suggesting a role for Si in the process. However, TaLsi1 pad4 and TaLsi1 sid2 plants were also more resistant to Gc than were pad4 and sid2 plants following Si treatment. Analysis of the resistant phenotypes revealed a significantly reduced production of SA and expression of defence genes comparable with susceptible controls. These results indicate that Si contributes to Arabidopsis defence priming following pathogen infection, but highlight that Si will confer protection even when priming is altered. We conclude that Si-mediated protection involves mechanisms other than SA-dependent defence responses. © 2014 BSPP AND JOHN WILEY & SONS LTD.

Single event burnout of high-power diodes

NASA Astrophysics Data System (ADS)

Maier, K. H.; Denker, A.; Voss, P.; Becker, H.-W.

1998-12-01

High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

PubMed Central

Marrs, Michael A.; Raupp, Gregory B.

2016-01-01

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

PubMed

Marrs, Michael A; Raupp, Gregory B

2016-07-26

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

Role of polymeric binders on mechanical behavior and cracking resistance of silicon composite electrodes during electrochemical cycling

NASA Astrophysics Data System (ADS)

Li, Dawei; Wang, Yikai; Hu, Jiazhi; Lu, Bo; Dang, Dingying; Zhang, Junqian; Cheng, Yang-Tse

2018-05-01

This work focuses on understanding the role of various binders, including sodium alginate (SA), Nafion, and polyvinylidene fluoride (PVDF), on the mechanical behavior and cracking resistance of silicon composite electrodes during electrochemical cycling. In situ curvature measurement of bilayer electrodes, consisting of a silicon-binder-carbon black composite layer on a copper foil, is used to determine the effects of binders on bending deformation, elastic modulus, and stress on the composite electrodes. It is found that the lithiation induced curvature and the modulus of the silicon/SA electrodes are larger than those of electrodes with Nafion and PVDF as binders. Although the modulus of Nafion is smaller than that of PVDF, the curvature and the modulus of silicon/Nafion composite are larger than those of silicon/PVDF electrodes. The moduli of all three composites decrease not only during lithiation but also during delithiation. Based on the measured stress and scanning electron microscopy observations of cracking in the composite electrodes, we conclude that the stress required to crack the composite electrodes with SA and Nafion binders is considerably higher than that of the silicon/PVDF electrode during electrochemical cycling. Thus, the cracking resistance of silicon/SA and silicon/Nafion composite electrodes is higher than that of silicon/PVDF electrodes.

40 CFR 750.20 - Cross-examination.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Cross-examination. 750.20 Section 750.20 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES CONTROL ACT... Manufacturing Exemptions § 750.20 Cross-examination. Section 750.8 shall be applicable. ...

23 CFR 750.152 - Application.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Application. 750.152 Section 750.152 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Directional and Official Signs § 750.152 Application. The following standards apply...

Simulated Space Environment Effects on the Blocking Force of Silicone Adhesive

NASA Technical Reports Server (NTRS)

Boeder, Paul; Mikatarian, Ron; Koontz, Steve; Albyn, Keith; Finckenor, Miria

2005-01-01

The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (<0.1 ev) for comparison to the LMSS tests. Diode tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking

23 CFR 750.702 - Applicability.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Applicability. 750.702 Section 750.702 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising Control § 750.702 Applicability. The provisions of this subpart are applicable to all...

23 CFR 750.303 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Definitions. 750.303 Section 750.303 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.303 Definitions. (a) Sign...

23 CFR 750.308 - Reports.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Reports. 750.308 Section 750.308 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.308 Reports. Periodic...

50 CFR 600.750 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 50 Wildlife and Fisheries 12 2014-10-01 2014-10-01 false Definitions. 600.750 Section 600.750..., DEPARTMENT OF COMMERCE MAGNUSON-STEVENS ACT PROVISIONS Fishery Negotiation Panels § 600.750 Definitions... concurrence; or (2) agrees upon another specified definition. Fishery negotiation panel (FNP) means an...

50 CFR 600.750 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 50 Wildlife and Fisheries 12 2012-10-01 2012-10-01 false Definitions. 600.750 Section 600.750..., DEPARTMENT OF COMMERCE MAGNUSON-STEVENS ACT PROVISIONS Fishery Negotiation Panels § 600.750 Definitions... concurrence; or (2) agrees upon another specified definition. Fishery negotiation panel (FNP) means an...

48 CFR 750.7101 - Authority.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Authority. 750.7101 Section 750.7101 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... Interests of the United States 750.7101 Authority. Under section 633 of the Foreign Assistance Act of 1961...

Degradation of the Adhesive Properties of MD-944 Diode Tape by Simulated Low Earth Orbit Environmental Factors

NASA Technical Reports Server (NTRS)

Albyn, K.; Finckenor, M.

2006-01-01

The International Space Station (ISS) solar arrays utilize MD-944 diode tape with silicone pressure-sensitive adhesive to protect the underlying diodes and also provide a high-emittance surface. On-orbit, the silicone adhesive will be exposed and ultimately convert to a glass-like silicate due to atomic oxygen (AO). The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 mo or more). The exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. The Environmental Effects Branch at Marshall Space Flight Center, under direction from the ISS Program Office Environments Team, performed simulated space environment exposures with 5-eV AO, near ultraviolet radiation and ionizing radiation. The exposed diode tape samples were put under preload and then the resulting blocking force was measured using a tensile test machine. Test results indicate that high-energy AO, ultraviolet radiation, and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force

Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuits for Active Matrix Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yu-Sheng; Liu, Yan-Wei

A new pixel design and driving method for active matrix organic light emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage programming method are proposed and verified using the SPICE simulator. We had employed an appropriate TFT model in SPICE simulation to demonstrate the performance of the pixel circuit. The OLED anode voltage variation error rates are below 0.35% under driving TFT threshold voltage deviation (Δ Vth =± 0.33V). The OLED current non-uniformity caused by the OLED threshold voltage degradation (Δ VTO =+0.33V) is significantly reduced (below 6%). The simulation results show that the pixel design can improve the display image non-uniformity by compensating for the threshold voltage deviation in the driving TFT and the OLED threshold voltage degradation at the same time.

23 CFR 750.308 - Reports.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 23 Highways 1 2010-04-01 2010-04-01 false Reports. 750.308 Section 750.308 Highways FEDERAL... Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.308 Reports. Periodic reports on site acquisitions and actual sign removals shall be submitted on FHWA Form 1424 and as...

23 CFR 750.308 - Reports.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 23 Highways 1 2011-04-01 2011-04-01 false Reports. 750.308 Section 750.308 Highways FEDERAL... Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.308 Reports. Periodic reports on site acquisitions and actual sign removals shall be submitted on FHWA Form 1424 and as...

23 CFR 750.704 - Statutory requirements.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Statutory requirements. 750.704 Section 750.704 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.704 Statutory requirements. (a) 23 U.S.C. 131 provides that... Secretary in subpart B, part 750, chapter I, 23 CFR, National Standards for Directional and Official Signs...

23 CFR 750.303 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-04-01

... Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.303 Definitions. (a) Sign... 23 Highways 1 2010-04-01 2010-04-01 false Definitions. 750.303 Section 750.303 Highways FEDERAL..., billboard or other thing which is designed, intended of the advertising or informative contents of which is...

40 CFR 750.30 - Applicability.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Processing and Distribution in Commerce Exemptions § 750.30 Applicability. Sections 750.30-750.41 apply to all rulemakings under authority of section 6(e)(3)(B) of the Toxic Substances Control Act (TSCA), 15 U.S.C. 2605(e)(3)(B) with respect to petitions for PCB processing and distribution in commerce...

40 CFR 750.30 - Applicability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Processing and Distribution in Commerce Exemptions § 750.30 Applicability. Sections 750.30-750.41 apply to all rulemakings under authority of section 6(e)(3)(B) of the Toxic Substances Control Act (TSCA), 15 U.S.C. 2605(e)(3)(B) with respect to petitions for PCB processing and distribution in commerce...

40 CFR 750.30 - Applicability.

Code of Federal Regulations, 2014 CFR

2014-07-01

... Processing and Distribution in Commerce Exemptions § 750.30 Applicability. Sections 750.30-750.41 apply to all rulemakings under authority of section 6(e)(3)(B) of the Toxic Substances Control Act (TSCA), 15 U.S.C. 2605(e)(3)(B) with respect to petitions for PCB processing and distribution in commerce...

40 CFR 750.30 - Applicability.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Processing and Distribution in Commerce Exemptions § 750.30 Applicability. Sections 750.30-750.41 apply to all rulemakings under authority of section 6(e)(3)(B) of the Toxic Substances Control Act (TSCA), 15 U.S.C. 2605(e)(3)(B) with respect to petitions for PCB processing and distribution in commerce...

40 CFR 750.34 - Record.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Record. 750.34 Section 750.34... Processing and Distribution in Commerce Exemptions § 750.34 Record. (a) No later than the date of proposal of a rule subject to this subpart, a rulemaking record for that rule will be established. It will...

40 CFR 750.34 - Record.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Record. 750.34 Section 750.34... Processing and Distribution in Commerce Exemptions § 750.34 Record. (a) No later than the date of proposal of a rule subject to this subpart, a rulemaking record for that rule will be established. It will...

40 CFR 750.34 - Record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Record. 750.34 Section 750.34... Processing and Distribution in Commerce Exemptions § 750.34 Record. (a) No later than the date of proposal of a rule subject to this subpart, a rulemaking record for that rule will be established. It will...

High-performance noncontact thermal diode via asymmetric nanostructures

NASA Astrophysics Data System (ADS)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

23 CFR 750.151 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Purpose. 750.151 Section 750.151 Highways FEDERAL... National Standards for Directional and Official Signs § 750.151 Purpose. (a) In section 131 of title 23 U.S... title 23 U.S.C. [38 FR 16044, June 30, 1973, as amended at 40 FR 21934, May 20, 1975] ...

40 CFR 750.3 - Record.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Record. 750.3 Section 750.3 Protection... Section 6 of the Toxic Substances Control Act § 750.3 Record. (a) No later than the date of proposal of a rule subject to this part, a rulemaking record for that rule shall be established. It shall consist of...

40 CFR 750.3 - Record.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Record. 750.3 Section 750.3 Protection... Section 6 of the Toxic Substances Control Act § 750.3 Record. (a) No later than the date of proposal of a rule subject to this part, a rulemaking record for that rule shall be established. It shall consist of...

40 CFR 750.3 - Record.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Record. 750.3 Section 750.3 Protection... Section 6 of the Toxic Substances Control Act § 750.3 Record. (a) No later than the date of proposal of a rule subject to this part, a rulemaking record for that rule shall be established. It shall consist of...

23 CFR 750.302 - Policy.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Policy. 750.302 Section 750.302 Highways FEDERAL HIGHWAY..., displays, or devices which are lawfully existing under State law, in conformance with the terms of 23 U.S.C... relocation, pursuant to the provisions of 23 CFR § 750.305(a)(2), and which are required to be removed as a...

High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Seo, Hyung-Kee; Shin, Hyung Shik

2015-07-30

Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150-200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I-V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I-V behavior was observed without m-dihydroxybenzene chemical. This non-linear I-V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I-V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM(-1)cm(-2), good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s). Copyright © 2015 Elsevier B.V. All rights reserved.

Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Lin, Guangyang; Yi, Xiaohui; Li, Cheng; Chen, Ningli; Zhang, Lu; Chen, Songyan; Huang, Wei; Wang, Jianyuan; Xiong, Xihuan; Sun, Jiaming

2016-10-01

A lateral p-Si0.05Ge0.95/i-Ge/n-Si0.05Ge0.95 heterojunction light emitting diode on a silicon-on-insulator (SOI) substrate was proposed, which is profitable to achieve higher luminous extraction compared to vertical junctions. Due to the high carrier injection ratio of heterostructures and optical reflection at the SiO2/Si interface of the SOI, strong room temperature electroluminescence (EL) at around 1600 nm from the direct bandgap of i-Ge with 0.30% tensile strain was observed. The EL peak intensity of the lateral heterojunction is enhanced by ˜4 folds with a larger peak energy than that of the vertical Ge p-i-n homojunction, suggesting that the light emitting efficiency of the lateral heterojunction is effectively improved. The EL peak intensity of the lateral heterojunction, which increases quadratically with injection current density, becomes stronger for diodes with a wider i-Ge region. The CMOS compatible fabrication process of the lateral heterojunctions paves the way for the integration of the light source with the Ge metal-oxide-semiconductor field-effect-transistor.

Diode laser-assisted endoscopic dacryocystorhinostomy: a comparison of three different combinations of adjunctive procedures.

PubMed

Dogan, Remzi; Meric, Aysenur; Ozsütcü, Mustafa; Yenigun, Alper

2013-08-01

Chronic dacryocystitis is a frequently encountered condition which can be corrected by dacryocystorhinostomy. Today, the diode laser is increasingly put to use in such corrective operations. This study aims to answer the questions of which adjunctive procedures and which combinations of such procedures are necessary and effective in securing more successful outcomes in diode laser dacryocystorhinostomy. This prospective randomized study included eighty patients (13 male, 67 female) who underwent dacryocystorhinostomy in our hospital during the 2 year period of January 2009-January 2011. The patients were selected consecutively and were randomly allocated to three groups. Group 1 (30): diode laser + mitomycin C + silicone intubation; Group 2 (27): diode laser + silicone intubation; Group 3 (23): diode laser + mitomycin C. All patients were evaluated postoperatively on day 1, week 1, and on the 1st, 3rd, 6th, 12th, 18th, and 24th months. The postoperative evaluation consisted of preoperative and postoperative ostium measurements, recording postoperative complications, and calculating and comparing success rates and operative times. The mean ages of the patients were 63.4 for Group 1, 60.7 for Group 2, and 61.8 for Group 3. No statistically significant difference was found among the groups regarding pre- and postoperative ostium measurements. The success rates were 84.3, 80, and 76.9 % for Groups 1, 2, and 3, respectively. Complications noted in Group 1 were restenosis (3), premature silicone tube loss (1), development of granulation tissue (3), synechia (2), infection (2), and hemorrhage (3). Those for Group 2 were restenosis (5), premature tube loss (2), granulation (8), synechia (6), infection (3), and hemorrhage (4). Group 3 had 6 cases with stenosis, 5 with granulation, 3 with infection, 6 with synechia, and 5 with hemorrhage. The operative times of the groups were 25.5, 15.3, and 18.1 min, respectively, for Group 1, 2, and 3. All three groups had statistically

Femtosecond laser fabricating black silicon in alkaline solution

NASA Astrophysics Data System (ADS)

Meng, Jiao; Song, Haiying; Li, Xiaoli; Liu, Shibing

2015-03-01

An efficient approach for enhancing the surface antireflection is proposed, in which a black silicon is fabricated by a femtosecond laser in alkaline solution. In the experiment, 2 wt% NaOH solution is formulated at room temperature (22 ± 1 °C). Then, a polished silicon is scanned via femtosecond laser irradiation in 2 wt% NaOH solution. Jungle-like microstructures on the black silicon surface are characterized using an atomic force microscopy. The reflectance of the black silicon is measured at the wavelengths ranging from 400 to 750 nm. Compared to the polished silicon, the black silicon can significantly suppress the optical reflection throughout the visible region (<5 %). Meanwhile, we also investigated the factors of the black silicon, including the femtosecond laser pulse energy and the scanning speed. This method is simple and effective to acquire the black silicon, which probably has a large advantage in fast and cost-effective black silicon fabrication.

Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

NASA Astrophysics Data System (ADS)

Devès, G.; Matsuyama, S.; Barbotteau, Y.; Ishii, K.; Ortega, R.

2006-05-01

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

Integrated digital metamaterials enables ultra-compact optical diodes

DOE PAGES

Shen, Bing; Polson, Randy; Menon, Rajesh

2015-01-01

We applied nonlinear optimization to design integrated digital metamaterials in silicon for unidirectional energy flow. Two devices, one for each polarization state, were designed, fabricated, and characterized. Both devices offer comparable or higher transmission efficiencies and extinction ratios, are easier to fabricate, exhibit larger bandwidths and are more tolerant to fabrication errors, when compared to alternatives. Furthermore, each device footprint is only 3μm × 3μm, which is the smallest optical diode ever reported. To illustrate the versatility of digital metamaterials, we also designed a polarization-independent optical diode.

Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Oh, Kyonghwan; Kwon, Oh-Kyong

2012-03-01

A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

PubMed

Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

2014-03-28

A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

NASA Astrophysics Data System (ADS)

Horisberger, R.

1990-03-01

It is proposed to combine the technology of fully depleted silicon microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. Teh resulting structure has amplifying properties and is referred to as bipolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking.

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

23 CFR 750.155 - State standards.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false State standards. 750.155 Section 750.155 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Directional and Official Signs § 750.155 State standards. This part does...

23 CFR 750.705 - Effective control.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 23 Highways 1 2013-04-01 2013-04-01 false Effective control. 750.705 Section 750.705 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.705 Effective control. In order to provide effective control of... of applicable control requirements will apply; (h) Develop laws, regulations, and procedures to...

23 CFR 750.705 - Effective control.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 23 Highways 1 2011-04-01 2011-04-01 false Effective control. 750.705 Section 750.705 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.705 Effective control. In order to provide effective control of... of applicable control requirements will apply; (h) Develop laws, regulations, and procedures to...

23 CFR 750.705 - Effective control.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Effective control. 750.705 Section 750.705 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.705 Effective control. In order to provide effective control of... of applicable control requirements will apply; (h) Develop laws, regulations, and procedures to...

23 CFR 750.705 - Effective control.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 23 Highways 1 2014-04-01 2014-04-01 false Effective control. 750.705 Section 750.705 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.705 Effective control. In order to provide effective control of... of applicable control requirements will apply; (h) Develop laws, regulations, and procedures to...

23 CFR 750.705 - Effective control.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 23 Highways 1 2010-04-01 2010-04-01 false Effective control. 750.705 Section 750.705 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.705 Effective control. In order to provide effective control of... of applicable control requirements will apply; (h) Develop laws, regulations, and procedures to...

The Development of Silicon Carbide Based Hydrogen and Hydrocarbon Sensors

NASA Technical Reports Server (NTRS)

Liu, Chung-Chiun

1994-01-01

Silicon carbide is a high temperature electronic material. Its potential for development of chemical sensors in a high temperature environment has not been explored. The objective of this study is to use silicon carbide as the substrate material for the construction of chemical sensors for high temperature applications. Sensors for the detection of hydrogen and hydrocarbon are developed in this program under the auspices of Lewis Research Center, NASA. Metal-semiconductor or metal-insulator-semiconductor structures are used in this development. Specifically, using palladium-silicon carbide Schottky diodes as gas sensors in the temperature range of 100 to 400 C are designed, fabricated and assessed. The effect of heat treatment on the Pd-SiC Schottky diode is examined. Operation of the sensors at 400 C demonstrate sensitivity of the sensor to hydrogen and hydrocarbons. Substantial progress has been made in this study and we believe that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures. However, the long term stability and operational life of the sensor need to be assessed. This aspect is an important part of our future continuing investigation.

Graphene-Based Reversible Nano-Switch/Sensor Schottky Diode

NASA Technical Reports Server (NTRS)

Miranda, Felix A.; Meador, Michael A.; Theofylaktos, Onoufrios; Pinto, Nicholas J.; Mueller, Carl H.; Santos-Perez, Javier

2010-01-01

This proof-of-concept device consists of a thin film of graphene deposited on an electrodized doped silicon wafer. The graphene film acts as a conductive path between a gold electrode deposited on top of a silicon dioxide layer and the reversible side of the silicon wafer, so as to form a Schottky diode. By virtue of the two-dimensional nature of graphene, this device has extreme sensitivity to different gaseous species, thereby serving as a building block for a volatile species sensor, with the attribute of having reversibility properties. That is, the sensor cycles between active and passive sensing states in response to the presence or absence of the gaseous species.

Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2018-04-01

Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

23 CFR 750.110 - State regulations.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 23 Highways 1 2011-04-01 2011-04-01 false State regulations. 750.110 Section 750.110 Highways... BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate System Under the 1958 Bonus Program § 750.110 State regulations. A State may elect to prohibit signs...

23 CFR 750.110 - State regulations.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 23 Highways 1 2010-04-01 2010-04-01 false State regulations. 750.110 Section 750.110 Highways... BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate System Under the 1958 Bonus Program § 750.110 State regulations. A State may elect to prohibit signs...

Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabe, Michiharu, E-mail: tabe.michiharu@shizuoka.ac.jp; Tan, Hoang Nhat; Mizuno, Takeshi

We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region, by atomistic effects which release such current limitation. In thin-Si lateral highly doped pn diodes, we find clear signatures of interband tunneling between 2D-subbands involving phonon assistance. More importantly, the tunneling current is sharply enhanced in a narrow voltage range by resonance via a pair of amore » donor- and an acceptor-atom in the pn junction region. Such atomistic behavior is recognized as a general feature showing up only in nanoscale tunnel diodes. In particular, a donor-acceptor pair with deeper ground-state energies is likely to be responsible for such a sharply enhanced current peak, tunable by external biases.« less

Micro benchtop optics by bulk silicon micromachining

DOEpatents

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

30 CFR 750.15 - Coal exploration.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 3 2014-07-01 2014-07-01 false Coal exploration. 750.15 Section 750.15 Mineral... PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.15 Coal exploration. Coal exploration operations on Indian lands shall be conducted in accordance with 25 CFR part 216...

30 CFR 750.15 - Coal exploration.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 3 2011-07-01 2011-07-01 false Coal exploration. 750.15 Section 750.15 Mineral... PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.15 Coal exploration. Coal exploration operations on Indian lands shall be conducted in accordance with 25 CFR part 216...

30 CFR 750.15 - Coal exploration.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Coal exploration. 750.15 Section 750.15 Mineral... PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.15 Coal exploration. Coal exploration operations on Indian lands shall be conducted in accordance with 25 CFR part 216...

30 CFR 750.15 - Coal exploration.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 3 2012-07-01 2012-07-01 false Coal exploration. 750.15 Section 750.15 Mineral... PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.15 Coal exploration. Coal exploration operations on Indian lands shall be conducted in accordance with 25 CFR part 216...

30 CFR 750.15 - Coal exploration.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 3 2013-07-01 2013-07-01 false Coal exploration. 750.15 Section 750.15 Mineral... PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.15 Coal exploration. Coal exploration operations on Indian lands shall be conducted in accordance with 25 CFR part 216...

32 CFR 750.36 - Time limitations.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 32 National Defense 5 2013-07-01 2013-07-01 false Time limitations. 750.36 Section 750.36 National... Tort Claims Act § 750.36 Time limitations. (a) Administrative claim. Every claim filed against the... the statutory time period, the day of the incident is excluded and the day the claim was presented...

32 CFR 750.36 - Time limitations.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 32 National Defense 5 2014-07-01 2014-07-01 false Time limitations. 750.36 Section 750.36 National... Tort Claims Act § 750.36 Time limitations. (a) Administrative claim. Every claim filed against the... the statutory time period, the day of the incident is excluded and the day the claim was presented...

32 CFR 750.36 - Time limitations.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 32 National Defense 5 2012-07-01 2012-07-01 false Time limitations. 750.36 Section 750.36 National... Tort Claims Act § 750.36 Time limitations. (a) Administrative claim. Every claim filed against the... the statutory time period, the day of the incident is excluded and the day the claim was presented...

32 CFR 750.36 - Time limitations.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Time limitations. 750.36 Section 750.36 National... Tort Claims Act § 750.36 Time limitations. (a) Administrative claim. Every claim filed against the... the statutory time period, the day of the incident is excluded and the day the claim was presented...

40 CFR 750.40 - Cross-examination.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Cross-examination. 750.40 Section 750... Processing and Distribution in Commerce Exemptions § 750.40 Cross-examination. (a) After the close of the... cross-examination. The request must be received by EPA within one week after a full transcript of the...

Stability of some epoxy-encapsulated diode thermometers

NASA Technical Reports Server (NTRS)

Mangum, B. W.; Evans, G. A., Jr.

1986-01-01

The stability upon thermal cycling and handling of ten small, epoxy-encapsulated silicon diode thermometers at six temperatures in the range from liquid nitrogen temperatures to about 60 C. The nominal temperatures of measurement were -196, -78, 0, 20, 40, and 60 C, as measured on the International Practical Temperature Scale of 1968. Diodes were to be thermally cycled 15 to 20 times. Since NASA anticipates that the uncertainty in their temperature measurements will be + or - 50 mK, uncertainties as large as + or - 10 mK in the measurements of the evaluaton can be accommodated without deleteriously affecting the value of the results of the investigation.

23 CFR 750.301 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Purpose. 750.301 Section 750.301 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION... 23 U.S.C. 131(g). ...

40 CFR 750.34 - Record.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Processing and Distribution in Commerce Exemptions § 750.34 Record. (a) No later than the date of proposal of... consist of a separate identified filing space containing: (1) All documents required by § 750.31(d); (2...

Deep diode arrays for X-ray detection

NASA Technical Reports Server (NTRS)

Zemel, J. N.

1984-01-01

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Molecular diodes in optical rectennas

NASA Astrophysics Data System (ADS)

Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

2016-09-01

The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

NASA Astrophysics Data System (ADS)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

23 CFR 750.710 - Landmark signs.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Landmark signs. 750.710 Section 750.710 Highways FEDERAL... Outdoor Advertising Control § 750.710 Landmark signs. (a) 23 U.S.C. 131(c) permits the existence of signs... artistic significance, the preservation of which is consistent with the purpose of 23 U.S.C. 131. (b...

23 CFR 750.713 - Bonus provisions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Bonus provisions. 750.713 Section 750.713 Highways... BEAUTIFICATION Outdoor Advertising Control § 750.713 Bonus provisions. 23 U.S.C. 131(j) specifically provides... States are not exempt from the other provisions of 23 U.S.C. 131. If a State elects to comply with both...

40 CFR 750.8 - Cross-examination.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Cross-examination. 750.8 Section 750.8... Section 6 of the Toxic Substances Control Act § 750.8 Cross-examination. (a) After the close of the... cross-examination. The request shall be received by EPA within one week after a full transcript of the...

48 CFR 750.7103 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Definitions. 750.7103 Section 750.7103 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Ching-Lin Fan,; Yi-Yan Lin,; Jyu-Yu Chang,; Bo-Jhang Sun,; Yan-Wei Liu,

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (Δ VTH = ± 0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

A New Low Temperature Polycrystalline Silicon Thin Film Transistor Pixel Circuit for Active Matrix Organic Light Emitting Diode

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Yi-Yan; Chang, Jyu-Yu; Sun, Bo-Jhang; Liu, Yan-Wei

2010-06-01

This study presents one novel compensation pixel design and driving method for active matrix organic light-emitting diode (AMOLED) displays that use low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) with a voltage feed-back method and the simulation results are proposed and verified by SPICE simulator. The measurement and simulation of LTPS TFT characteristics demonstrate the good fitting result. The proposed circuit consists of four TFTs and two capacitors with an additional signal line. The error rates of OLED anode voltage variation are below 0.3% under the threshold voltage deviation of driving TFT (ΔVTH = ±0.33 V). The simulation results show that the pixel design can improve the display image non-uniformity by compensating the threshold voltage deviation of driving TFT and the degradation of OLED threshold voltage at the same time.

Response of CMS avalanche photo-diodes to low energy neutrons

NASA Astrophysics Data System (ADS)

Brown, R. M.; Deiters, K.; Ingram, Q.; Renker, D.

2012-12-01

The response of the Avalanche Photo-diodes (APDs) installed in the CMS detector at the LHC to neutrons from 241AmBe and 252Cf sources is reported. Signals in size equivalent to those of up to 106 photo-electrons with the nominal APD gain are observed. Measurements with an APD with the protective epoxy coating removed and with the source placed behind the APD show that there is an important response due to recoil protons from neutron interactions with the hydrogen in the epoxy, in addition to signals from neutron interactions with the silicon of the diode. The effective gain of these signals is much smaller than the diode's nominal gain.

Avalanche diode having reduced dark current and method for its manufacture

DOEpatents

Davids, Paul; Starbuck, Andrew Lee; Pomerene, Andrew T. S.

2017-08-29

An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.

Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

PubMed

Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

2013-10-01

In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

Development of a 750x750 pixels CMOS imager sensor for tracking applications

NASA Astrophysics Data System (ADS)

Larnaudie, Franck; Guardiola, Nicolas; Saint-Pé, Olivier; Vignon, Bruno; Tulet, Michel; Davancens, Robert; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Estribeau, Magali

2017-11-01

Solid-state optical sensors are now commonly used in space applications (navigation cameras, astronomy imagers, tracking sensors...). Although the charge-coupled devices are still widely used, the CMOS image sensor (CIS), which performances are continuously improving, is a strong challenger for Guidance, Navigation and Control (GNC) systems. This paper describes a 750x750 pixels CMOS image sensor that has been specially designed and developed for star tracker and tracking sensor applications. Such detector, that is featuring smart architecture enabling very simple and powerful operations, is built using the AMIS 0.5μm CMOS technology. It contains 750x750 rectangular pixels with 20μm pitch. The geometry of the pixel sensitive zone is optimized for applications based on centroiding measurements. The main feature of this device is the on-chip control and timing function that makes the device operation easier by drastically reducing the number of clocks to be applied. This powerful function allows the user to operate the sensor with high flexibility: measurement of dark level from masked lines, direct access to the windows of interest… A temperature probe is also integrated within the CMOS chip allowing a very precise measurement through the video stream. A complete electro-optical characterization of the sensor has been performed. The major parameters have been evaluated: dark current and its uniformity, read-out noise, conversion gain, Fixed Pattern Noise, Photo Response Non Uniformity, quantum efficiency, Modulation Transfer Function, intra-pixel scanning. The characterization tests are detailed in the paper. Co60 and protons irradiation tests have been also carried out on the image sensor and the results are presented. The specific features of the 750x750 image sensor such as low power CMOS design (3.3V, power consumption<100mW), natural windowing (that allows efficient and robust tracking algorithms), simple proximity electronics (because of the on

50 CFR 600.750 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 50 Wildlife and Fisheries 8 2010-10-01 2010-10-01 false Definitions. 600.750 Section 600.750 Wildlife and Fisheries FISHERY CONSERVATION AND MANAGEMENT, NATIONAL OCEANIC AND ATMOSPHERIC ADMINISTRATION.... Consensus means unanimous concurrence among the members on a Fishery Negotiation Panel established under...

23 CFR 750.101 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Purpose. 750.101 Section 750.101 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate System Under...

23 CFR 750.109 - Exclusions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Exclusions. 750.109 Section 750.109 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate System Under...

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator.

PubMed

Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui; Yu, Mingbin

2012-03-26

We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit (VπL) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.

23 CFR 750.701 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Purpose. 750.701 Section 750.701 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION... (FHWA) policies and requirements relating to the effective control of outdoor advertising under 23 U.S.C...

23 CFR 750.502 - Applicability.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Applicability. 750.502 Section 750.502 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION... to signs adjacent to the Interstate and primary systems which are required to be controlled under 23...

32 CFR 750.23 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Definitions. 750.23 Section 750.23 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS Federal.... These entities operate from self-generated funds, rather than from funds appropriated by Congress...

Graphite based Schottky diodes formed semiconducting substrates

NASA Astrophysics Data System (ADS)

Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

2010-03-01

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

Silicon Based Colloidal Quantum Dot and Nanotube Lasers

DTIC Science & Technology

2013-03-01

carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal

23 CFR 750.152 - Application.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 23 Highways 1 2010-04-01 2010-04-01 false Application. 750.152 Section 750.152 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION... and sixty (660) feet of the right-of-way of such systems, outside of urban areas, visible from the...

Electrolytic photodissociation of chemical compounds by iron oxide photochemical diodes

DOEpatents

Somorjai, Gabor A.; Leygraf, Christofer H.

1985-01-01

Chemical compounds can be dissociated by contacting the same with a p/n type semi-conductor photochemical diode having visible light as its sole source of energy. The photochemical diode consists of low cost, readily available materials, specifically polycrystalline iron oxide doped with silicon in the case of the n-type semi-conductor electrode, and polycrystalline iron oxide doped with magnesium in the case of the p-type electrode. So long as the light source has an energy greater than 2.2 electron volts, no added energy source is needed to achieve dissociation.

48 CFR 750.000 - Scope of part.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 5 2011-10-01 2011-10-01 false Scope of part. 750.000 Section 750.000 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS 750.000 Scope of part. USAID is not among the agencies named in...

48 CFR 750.000 - Scope of part.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Scope of part. 750.000 Section 750.000 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS 750.000 Scope of part. USAID is not among the agencies named in...

48 CFR 750.000 - Scope of part.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 5 2014-10-01 2014-10-01 false Scope of part. 750.000 Section 750.000 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS 750.000 Scope of part. USAID is not among the agencies named in...

23 CFR 750.712 - Reclassification of signs.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Reclassification of signs. 750.712 Section 750.712 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising Control § 750.712 Reclassification of signs. Any sign lawfully erected after...

40 CFR 272.702-272.750 - [Reserved

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 28 2012-07-01 2012-07-01 false [Reserved] 272.702-272.750 Section 272.702-272.750 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES (CONTINUED) APPROVED STATE HAZARDOUS WASTE MANAGEMENT PROGRAMS Illinois §§ 272.702-272.750 [Reserved] ...

40 CFR 272.702-272.750 - [Reserved

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 27 2011-07-01 2011-07-01 false [Reserved] 272.702-272.750 Section 272.702-272.750 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES (CONTINUED) APPROVED STATE HAZARDOUS WASTE MANAGEMENT PROGRAMS Illinois §§ 272.702-272.750 [Reserved] ...

40 CFR 272.702-272.750 - [Reserved

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 27 2014-07-01 2014-07-01 false [Reserved] 272.702-272.750 Section 272.702-272.750 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES (CONTINUED) APPROVED STATE HAZARDOUS WASTE MANAGEMENT PROGRAMS Illinois §§ 272.702-272.750 [Reserved] ...

40 CFR 272.702-272.750 - [Reserved

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 28 2013-07-01 2013-07-01 false [Reserved] 272.702-272.750 Section 272.702-272.750 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES (CONTINUED) APPROVED STATE HAZARDOUS WASTE MANAGEMENT PROGRAMS Illinois §§ 272.702-272.750 [Reserved] ...

48 CFR 750.7110-5 - Contract files.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 5 2011-10-01 2011-10-01 false Contract files. 750.7110-5 Section 750.7110-5 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... Interests of the United States 750.7110-5 Contract files. The fully executed action memorandum indicating...

48 CFR 750.7110-5 - Contract files.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 5 2014-10-01 2014-10-01 false Contract files. 750.7110-5 Section 750.7110-5 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... Interests of the United States 750.7110-5 Contract files. The fully executed action memorandum indicating...

48 CFR 750.7110-5 - Contract files.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 48 Federal Acquisition Regulations System 5 2013-10-01 2013-10-01 false Contract files. 750.7110-5 Section 750.7110-5 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... Interests of the United States 750.7110-5 Contract files. The fully executed action memorandum indicating...

48 CFR 750.7110-5 - Contract files.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Contract files. 750.7110-5 Section 750.7110-5 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... Interests of the United States 750.7110-5 Contract files. The fully executed action memorandum indicating...

40 CFR 272.702-272.750 - [Reserved

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 26 2010-07-01 2010-07-01 false [Reserved] 272.702-272.750 Section 272.702-272.750 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) SOLID WASTES (CONTINUED) APPROVED STATE HAZARDOUS WASTE MANAGEMENT PROGRAMS Illinois §§ 272.702-272.750 [Reserved] ...

Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt.

PubMed

Zou, Xingli; Ji, Li; Yang, Xiao; Lim, Taeho; Yu, Edward T; Bard, Allen J

2017-11-15

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

23 CFR 750.307 - FHWA project approval.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false FHWA project approval. 750.307 Section 750.307 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.307 FHWA project...

Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics.

PubMed

Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco Giuseppe

2016-01-06

Hydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34-40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

46 CFR 169.750 - Radio call sign.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 46 Shipping 7 2010-10-01 2010-10-01 false Radio call sign. 169.750 Section 169.750 Shipping COAST... Control, Miscellaneous Systems, and Equipment Markings § 169.750 Radio call sign. Each vessel certificated for exposed or partially protected water service must have its radio call sign permanently displayed...

32 CFR 750.29 - Investigation and examination.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Investigation and examination. 750.29 Section 750.29 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS Federal Tort Claims Act § 750.29 Investigation and examination. Subpart A of this part requires an...

23 CFR 750.501 - Purpose.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Purpose. 750.501 Section 750.501 Highways FEDERAL... pursuant to which a State may, if it desires, seek an exemption from the acquisition requirements of 23 U.S... removed. This exemption may be granted pursuant to the provisions of 23 U.S.C. 131(o). ...

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE PAGES

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.; ...

2017-03-01

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mauch, Daniel L.; Zutavern, Fred J.; Delhotal, Jarod J.

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode,more » which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.« less

23 CFR 750.503 - Exemptions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Exemptions. 750.503 Section 750.503 Highways FEDERAL... (hereinafter called signs) within a defined area from being acquired under the provisions of 23 U.S.C. 131 upon... by 23 U.S.C. 131(o), the State shall establish: (1) Its requirements for the directional content of...

Improvements of high-power diode laser line generators open up new application fields

NASA Astrophysics Data System (ADS)

Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

2009-02-01

Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

Driving force of stacking-fault formation in SiC p-i-n diodes.

PubMed

Ha, S; Skowronski, M; Sumakeris, J J; Paisley, M J; Das, M K

2004-04-30

The driving force of stacking-fault expansion in SiC p-i-n diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the driving force. A thermodynamic free energy difference between the perfect and a faulted structure is suggested as a plausible driving force in the tested diodes, indicating that hexagonal polytypes of silicon carbide are metastable at room temperature.

48 CFR 750.7105 - Approving authorities.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Approving authorities. 750.7105 Section 750.7105 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign...

48 CFR 750.7108 - Contractual requirements.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Contractual requirements. 750.7108 Section 750.7108 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign...

32 CFR 750.25 - Scope of liability.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Scope of liability. 750.25 Section 750.25... Federal Tort Claims Act § 750.25 Scope of liability. (a) Territorial limitations. The FTCA does not apply... 46 U.S.C. 741-752 or 781-790. Claims under the Death on the High Seas Act (46 U.S.C. 761), however...

48 CFR 750.7106-3 - Mistakes.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Mistakes. 750.7106-3 Section 750.7106-3 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7110 - Processing cases.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Processing cases. 750.7110 Section 750.7110 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7106-1 - General.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false General. 750.7106-1 Section 750.7106-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7102 - General policy.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false General policy. 750.7102 Section 750.7102 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

Charge transport properties of intrinsic layer in diamond vertical pin diode

NASA Astrophysics Data System (ADS)

Shimaoka, Takehiro; Kuwabara, Daisuke; Hara, Asuka; Makino, Toshiharu; Tanaka, Manobu; Koizumi, Satoshi

2017-05-01

Diamond is hoped to be utilized in ultimate power electronic devices exhibiting ultra-high blocking voltages. For practical device formation, it is important to characterize the electric properties to precisely simulate carrier transport and to practically design optimum device structures. In this study, we experimentally evaluated the charge transport properties of intrinsic layers in diamond vertical pin diodes using alpha-particle induced charge distribution measurements. The charge collection efficiencies were 98.1 ± 0.6% for a {111} pin diode and 96.9 ± 0.6% for a {100} pin diode, which means that almost all generated charges are collected accordingly equivalent to conventional Silicon pin photodiodes. Mobility-lifetime (μτ) products of holes were (2.2 ± 0.3) × 10-6 cm2/V for {111} and (1.8 ± 0.1) × 10-5 cm2/V for {100} diamond pin diodes.

Light emission from silicon: Some perspectives and applications

NASA Astrophysics Data System (ADS)

Fiory, A. T.; Ravindra, N. M.

2003-10-01

Research on efficient light emission from silicon devices is moving toward leading-edge advances in components for nano-optoelectronics and related areas. A silicon laser is being eagerly sought and may be at hand soon. A key advantage is in the use of silicon-based materials and processing, thereby using high yield and low-cost fabrication techniques. Anticipated applications include an optical emitter for integrated optical circuits, logic, memory, and interconnects; electro-optic isolators; massively parallel optical interconnects and cross connects for integrated circuit chips; lightwave components; high-power discrete and array emitters; and optoelectronic nanocell arrays for detecting biological and chemical agents. The new technical approaches resolve a basic issue with native interband electro-optical emission from bulk Si, which competes with nonradiative phonon- and defect-mediated pathways for electron-hole recombination. Some of the new ways to enhance optical emission efficiency in Si diode devices rely on carrier confinement, including defect and strain engineering in the bulk material. Others use Si nanocrystallites, nanowires, and alloying with Ge and crystal strain methods to achieve the carrier confinement required to boost radiative recombination efficiency. Another approach draws on the considerable progress that has been made in high-efficiency, solar-cell design and uses the reciprocity between photo- and light-emitting diodes. Important advances are also being made with silicon-oxide materials containing optically active rare-earth impurities.

49 CFR 236.750 - Interlocking, automatic.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 49 Transportation 4 2010-10-01 2010-10-01 false Interlocking, automatic. 236.750 Section 236.750 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION... manually, and which are so interconnected by means of electric circuits that their movements must succeed...

PPC750 Performance Monitor

NASA Technical Reports Server (NTRS)

Meyer, Donald; Uchenik, Igor

2007-01-01

The PPC750 Performance Monitor (Perfmon) is a computer program that helps the user to assess the performance characteristics of application programs running under the Wind River VxWorks real-time operating system on a PPC750 computer. Perfmon generates a user-friendly interface and collects performance data by use of performance registers provided by the PPC750 architecture. It processes and presents run-time statistics on a per-task basis over a repeating time interval (typically, several seconds or minutes) specified by the user. When the Perfmon software module is loaded with the user s software modules, it is available for use through Perfmon commands, without any modification of the user s code and at negligible performance penalty. Per-task run-time performance data made available by Perfmon include percentage time, number of instructions executed per unit time, dispatch ratio, stack high water mark, and level-1 instruction and data cache miss rates. The performance data are written to a file specified by the user or to the serial port of the computer

23 CFR 750.110 - State regulations.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false State regulations. 750.110 Section 750.110 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate...

30 CFR 750.10 - Information collection.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 3 2011-07-01 2011-07-01 false Information collection. 750.10 Section 750.10 Mineral Resources OFFICE OF SURFACE MINING RECLAMATION AND ENFORCEMENT, DEPARTMENT OF THE INTERIOR INDIAN... Information collection. The Office of Management and Budget has determined that the information collection...

30 CFR 750.10 - Information collection.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 3 2012-07-01 2012-07-01 false Information collection. 750.10 Section 750.10 Mineral Resources OFFICE OF SURFACE MINING RECLAMATION AND ENFORCEMENT, DEPARTMENT OF THE INTERIOR INDIAN... Information collection. The Office of Management and Budget has determined that the information collection...

32 CFR 750.43 - Claims payable.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Claims payable. 750.43 Section 750.43 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... of missiles and weapons, sonic booms, training and field exercises, and maneuvers that include...

30 CFR 750.10 - Information collection.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Information collection. 750.10 Section 750.10 Mineral Resources OFFICE OF SURFACE MINING RECLAMATION AND ENFORCEMENT, DEPARTMENT OF THE INTERIOR INDIAN... Information collection. The Office of Management and Budget has determined that the information collection...

32 CFR 750.43 - Claims payable.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 32 National Defense 5 2014-07-01 2014-07-01 false Claims payable. 750.43 Section 750.43 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... of missiles and weapons, sonic booms, training and field exercises, and maneuvers that include...

32 CFR 750.43 - Claims payable.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 32 National Defense 5 2012-07-01 2012-07-01 false Claims payable. 750.43 Section 750.43 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... of missiles and weapons, sonic booms, training and field exercises, and maneuvers that include...

32 CFR 750.43 - Claims payable.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Claims payable. 750.43 Section 750.43 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... of missiles and weapons, sonic booms, training and field exercises, and maneuvers that include...

32 CFR 750.43 - Claims payable.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 32 National Defense 5 2013-07-01 2013-07-01 false Claims payable. 750.43 Section 750.43 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... of missiles and weapons, sonic booms, training and field exercises, and maneuvers that include...

Space Environment Effects on Silicone Seal Materials

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Daniels, Christopher C.; Dever, Joyce A.; Miller, Sharon K.; Waters, Deborah L.; Finkbeiner, Joshua R.; Dunlap, Patrick H.; Steinetz, Bruce M.

2010-01-01

A docking system is being developed by the NASA to support future space missions. It is expected to use redundant elastomer seals to help contain cabin air during dockings between two spacecraft. The sealing surfaces are exposed to the space environment when vehicles are not docked. In space, the seals will be exposed to temperatures between 125 to -75 C, vacuum, atomic oxygen, particle and ultraviolet radiation, and micrometeoroid and orbital debris (MMOD). Silicone rubber is the only class of space flight-qualified elastomeric seal material that functions across the expected temperature range. NASA Glenn has tested three silicone elastomers for such seal applications: two provided by Parker (S0899-50 and S0383-70) and one from Esterline (ELA-SA-401). The effects of atomic oxygen (AO), UV and electron particle radiation, and vacuum on the properties of these three elastomers were examined. Critical seal properties such as leakage, adhesion, and compression set were measured before and after simulated space exposures. The S0899-50 silicone was determined to be inadequate for extended space seal applications due to high adhesion and intolerance to UV, but both S0383-70 and ELA-SA-401 seals were adequate.

TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode.

PubMed

Das, Achintya; Duttagupta, Siddhartha P

2015-12-01

There is a growing requirement of alpha spectroscopy in the fields context of environmental radioactive contamination, nuclear waste management, site decommissioning and decontamination. Although silicon-based alpha-particle detection technology is mature, high leakage current, low displacement threshold and radiation hardness limits the operation of the detector in harsh environments. Silicon carbide (SiC) is considered to be excellent material for radiation detection application due to its high band gap, high displacement threshold and high thermal conductivity. In this report, an alpha-particle-induced electron-hole pair generation model for a reverse-biased n-type SiC Schottky diode has been proposed and verified using technology computer aided design (TCAD) simulations. First, the forward-biased I-V characteristics were studied to determine the diode ideality factor and compared with published experimental data. The ideality factor was found to be in the range of 1.4-1.7 for a corresponding temperature range of 300-500 K. Next, the energy-dependent, alpha-particle-induced EHP generation model parameters were optimised using transport of ions in matter (TRIM) simulation. Finally, the transient pulses generated due to alpha-particle bombardment were analysed for (1) different diode temperatures (300-500 K), (2) different incident alpha-particle energies (1-5 MeV), (3) different reverse bias voltages of the 4H-SiC-based Schottky diode (-50 to -250 V) and (4) different angles of incidence of the alpha particle (0°-70°).The above model can be extended to other (wide band-gap semiconductor) device technologies useful for radiation-sensing application. © The Author 2015. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

32 CFR 750.6 - Claims: Presentment.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 32 National Defense 5 2013-07-01 2013-07-01 false Claims: Presentment. 750.6 Section 750.6 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... Claims Act shall be submitted on DD Form 1842. 2 The claim and all other papers requiring the signature...

32 CFR 750.6 - Claims: Presentment.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Claims: Presentment. 750.6 Section 750.6 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... Claims Act shall be submitted on DD Form 1842. 2 The claim and all other papers requiring the signature...

32 CFR 750.6 - Claims: Presentment.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Claims: Presentment. 750.6 Section 750.6 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... Claims Act shall be submitted on DD Form 1842. 2 The claim and all other papers requiring the signature...

32 CFR 750.6 - Claims: Presentment.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 32 National Defense 5 2012-07-01 2012-07-01 false Claims: Presentment. 750.6 Section 750.6 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS... Claims Act shall be submitted on DD Form 1842. 2 The claim and all other papers requiring the signature...

23 CFR 750.305 - Federal participation.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Federal participation. 750.305 Section 750.305 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY... a period of time which makes them ineligible for compensation under 23 U.S.C. 131, or for rights in...

Full-color OLED on silicon microdisplay

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

23 CFR 750.708 - Acceptance of state zoning.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Acceptance of state zoning. 750.708 Section 750.708 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising Control § 750.708 Acceptance of state zoning. (a) 23 U.S.C. 131(d) provide...

23 CFR 750.154 - Standards for directional signs.

Code of Federal Regulations, 2011 CFR

2011-04-01

... may be erected along a single route approaching the activity; (iii) Signs located adjacent to the... 23 Highways 1 2011-04-01 2011-04-01 false Standards for directional signs. 750.154 Section 750.154... BEAUTIFICATION National Standards for Directional and Official Signs § 750.154 Standards for directional signs...

23 CFR 750.154 - Standards for directional signs.

Code of Federal Regulations, 2010 CFR

2010-04-01

... may be erected along a single route approaching the activity; (iii) Signs located adjacent to the... 23 Highways 1 2010-04-01 2010-04-01 false Standards for directional signs. 750.154 Section 750.154... BEAUTIFICATION National Standards for Directional and Official Signs § 750.154 Standards for directional signs...

23 CFR 750.707 - Nonconforming signs.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Nonconforming signs. 750.707 Section 750.707 Highways... 23 U.S.C. 131. These provisions also apply to nonconforming signs located in commercial and... compensation for the removal of nonconforming lawfully existing signs in accordance with the terms of 23 U.S.C...

30 CFR 750.16 - Performance standards.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Performance standards. 750.16 Section 750.16... Performance standards. After OSM issues a permit under this part, a person conducting surface coal mining... shall adhere to the performance standards of 30 CFR chapter VII, subchapter B. [49 FR 38477, Sept. 28...

30 CFR 750.16 - Performance standards.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 30 Mineral Resources 3 2014-07-01 2014-07-01 false Performance standards. 750.16 Section 750.16... Performance standards. After OSM issues a permit under this part, a person conducting surface coal mining... shall adhere to the performance standards of 30 CFR chapter VII, subchapter B. [49 FR 38477, Sept. 28...

30 CFR 750.16 - Performance standards.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 30 Mineral Resources 3 2013-07-01 2013-07-01 false Performance standards. 750.16 Section 750.16... Performance standards. After OSM issues a permit under this part, a person conducting surface coal mining... shall adhere to the performance standards of 30 CFR chapter VII, subchapter B. [49 FR 38477, Sept. 28...

30 CFR 750.16 - Performance standards.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 30 Mineral Resources 3 2011-07-01 2011-07-01 false Performance standards. 750.16 Section 750.16... Performance standards. After OSM issues a permit under this part, a person conducting surface coal mining... shall adhere to the performance standards of 30 CFR chapter VII, subchapter B. [49 FR 38477, Sept. 28...

30 CFR 750.16 - Performance standards.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 30 Mineral Resources 3 2012-07-01 2012-07-01 false Performance standards. 750.16 Section 750.16... Performance standards. After OSM issues a permit under this part, a person conducting surface coal mining... shall adhere to the performance standards of 30 CFR chapter VII, subchapter B. [49 FR 38477, Sept. 28...

32 CFR 750.13 - Claims: Single service responsibility.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Claims: Single service responsibility. 750.13 Section 750.13 National Defense Department of Defense (Continued) DEPARTMENT OF THE NAVY CLAIMS GENERAL CLAIMS REGULATIONS General Provisions for Claims § 750.13 Claims: Single service responsibility. (a) The Department of Defense has assigned...

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Silicon solar cell process development, fabrication and analysis

NASA Technical Reports Server (NTRS)

Leung, D. C.; Iles, P. A.

1983-01-01

Measurements of minority carrier diffusion lengths were made on the small mesa diodes from HEM Si and SILSO Si. The results were consistent with previous Voc and Isc measurements. Only the medium grain SILSO had a distinct advantage for the non grain boundary diodes. Substantial variations were observed for the HEM ingot 4141C. Also a quantitatively scaled light spot scan was being developed for localized diffusion length measurements in polycrystalline silicon solar cells. A change to a more monochromatic input for the light spot scan results in greater sensitivity and in principle, quantitative measurement of local material qualities is now possible.

48 CFR 750.7100 - Scope of subpart.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 5 2011-10-01 2011-10-01 false Scope of subpart. 750.7100 Section 750.7100 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7100 - Scope of subpart.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 5 2014-10-01 2014-10-01 false Scope of subpart. 750.7100 Section 750.7100 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7100 - Scope of subpart.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Scope of subpart. 750.7100 Section 750.7100 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7104 - Types of actions.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Types of actions. 750.7104 Section 750.7104 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy...

48 CFR 750.7109-1 - Filing requests.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Filing requests. 750.7109-1 Section 750.7109-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign...

48 CFR 750.7106-4 - Informal commitments.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Informal commitments. 750.7106-4 Section 750.7106-4 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign...

films on silicon at different annealing temperatures

NASA Astrophysics Data System (ADS)

Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

2013-03-01

Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density ( Q f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO x /Si interface region decreased with increased temperature. Measurement results of Q f proved that the Al vacancy of the bulk film may not be related to Q f. The defect density in the SiO x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

Optical silicones for use in harsh operating environments

NASA Astrophysics Data System (ADS)

Riegler, Bill; Bruner, Stephen J.; Elgin, Randall

2004-12-01

The optics industry widely uses silcones for various fiber optic cable potting applications and light emitting diode protection. Optics manufacturers know traditional silicone elastomers, gels, thixotropic gels, and fluids not only perform extremely well in high temperature applications, but also offer refractive index matching so that silicones can transmit light with admirable efficiency. However, because environmental conditions may affect a material's performance over time, one must also consider the conditions the device operates in to ensure long-term reliability. External environments may include exposure to a combination of UV light and temperature, while other environments may expose devices to hydrocarbon based fuels. This paper will delve into the chemistry of silicones and functional groups that lend themselves to properties such as temperature, fuel, and radiation resistance to show shy silicone is the material of choice for optic applications under normally harmful forms of exposure. Data will be presented to examine silicone's performance in these environment.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

An optical microswitch chip integrated with silicon waveguides and touch-down electrostatic micromirrors

NASA Astrophysics Data System (ADS)

Jin, Young-Hyun; Seo, Kyoung-Sun; Cho, Young-Ho; Lee, Sang-Shin; Song, Ki-Chang; Bu, Jong-Uk

2004-12-01

We present an silicon-on-insulator (SOI) optical microswitch, composed of silicon waveguides and electrostatically actuated gold-coated silicon micromirrors integrated with laser diode (LD) receivers and photo diode (PD) transmitters. For a low switching voltage, we modify the conventional curved electrode microactuator into a new microactuator with touch-down beams. We fabricate the waveguides and the actuated micromirror using the inductively coupled plasma (ICP) etching process of SOI wafers. The fabricated microswitch operates at the switching voltage of 31.7 ± 4 V with the resonant frequency of 6.89 kHz. Compared to the conventional microactuator, the touch-down beam microactuator achieves 77.4% reduction of the switching voltage. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of 4.18 ± 0.25 dB. We discuss a feasible method to achieve the switching voltage lower than 10 V by reducing the residual stress in the insulation layers of touch-down beams to the level of 30 MPa. We also analyze the major source of micromirror loss, thereby presenting design guidelines for low-loss micromirror switches.

Advanced Environmental Barrier Coating and SA Tyrannohex SiC Composites Integration for Improved Thermomechanical and Environmental Durability

NASA Technical Reports Server (NTRS)

Zhu, Dongming; Halbig, Michael; Singh, Mrityunjay

2018-01-01

The development of 2700 degF capable environmental barrier coating (EBC) systems, particularly, the Rare Earth "Hafnium" Silicon bond coat systems, have significantly improved the temperature capability and environmental stability of SiC/SiC Ceramic Matrix Composite Systems. We have specifically developed the advanced 2700 degF EBC systems, integrating the EBC to the high temperature SA Tyrannohex SiC fiber composites, for comprehensive performance and durability evaluations for potential turbine engine airfoil component applications. The fundamental mechanical properties, environmental stability and thermal gradient cyclic durability performance of the EBC - SA Tyrannohex composites were investigated. The paper will particularly emphasize the high pressure combustion rig recession, cyclic thermal stress resistance and thermomechanical low cycle fatigue testing of uncoated and environmental barrier coated Tyrannohex SiC SA composites in these simulated turbine engine combustion water vapor, thermal gradients, and mechanical loading conditions. We have also investigated high heat flux and flexural fatigue degradation mechanisms, determined the upper limits of operating temperature conditions for the coated SA composite material systems in thermomechanical fatigue conditions. Recent progress has also been made by using the self-healing rare earth-silicon based EBCs, thus enhancing the SA composite hexagonal fiber columns bonding for improved thermomechanical and environmental durability in turbine engine operation environments. More advanced EBC- composite systems based on the new EBC-Fiber Interphases will also be discussed.

48 CFR 750.7107 - Limitations upon exercise of authority.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 48 Federal Acquisition Regulations System 5 2012-10-01 2012-10-01 false Limitations upon exercise of authority. 750.7107 Section 750.7107 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7107 Limitations upon exercise of...

48 CFR 750.7107 - Limitations upon exercise of authority.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 48 Federal Acquisition Regulations System 5 2011-10-01 2011-10-01 false Limitations upon exercise of authority. 750.7107 Section 750.7107 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7107 Limitations upon exercise of...

48 CFR 750.7107 - Limitations upon exercise of authority.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 48 Federal Acquisition Regulations System 5 2013-10-01 2013-10-01 false Limitations upon exercise of authority. 750.7107 Section 750.7107 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7107 Limitations upon exercise of...

48 CFR 750.7107 - Limitations upon exercise of authority.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 48 Federal Acquisition Regulations System 5 2014-10-01 2014-10-01 false Limitations upon exercise of authority. 750.7107 Section 750.7107 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7107 Limitations upon exercise of...

48 CFR 750.7107 - Limitations upon exercise of authority.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Limitations upon exercise of authority. 750.7107 Section 750.7107 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7107 Limitations upon exercise of...

23 CFR 750.103 - Measurements of distance.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Measurements of distance. 750.103 Section 750.103 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent to the Interstate...

Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

NASA Astrophysics Data System (ADS)

Na, Jun-Seok; Kwon, Oh-Kyong

2014-01-01

We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

30 CFR 750.13 - Small operator assistance.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 30 Mineral Resources 3 2010-07-01 2010-07-01 false Small operator assistance. 750.13 Section 750.13 Mineral Resources OFFICE OF SURFACE MINING RECLAMATION AND ENFORCEMENT, DEPARTMENT OF THE INTERIOR INDIAN LANDS PROGRAM REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS...

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Porous silicon carbide (SiC) semiconductor device

NASA Technical Reports Server (NTRS)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1994-01-01

A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

36 CFR 7.50 - Chickasaw Recreation Area.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 36 Parks, Forests, and Public Property 1 2013-07-01 2013-07-01 false Chickasaw Recreation Area. 7.50 Section 7.50 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR... around the Buckhorn Campground D Loop shoreline. (2) PWC may not be operated at greater than flat wake...

36 CFR 7.50 - Chickasaw Recreation Area.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 36 Parks, Forests, and Public Property 1 2011-07-01 2011-07-01 false Chickasaw Recreation Area. 7.50 Section 7.50 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR... around the Buckhorn Campground D Loop shoreline. (2) PWC may not be operated at greater than flat wake...

36 CFR 7.50 - Chickasaw Recreation Area.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 36 Parks, Forests, and Public Property 1 2012-07-01 2012-07-01 false Chickasaw Recreation Area. 7.50 Section 7.50 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR... around the Buckhorn Campground D Loop shoreline. (2) PWC may not be operated at greater than flat wake...

36 CFR 7.50 - Chickasaw Recreation Area.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 36 Parks, Forests, and Public Property 1 2010-07-01 2010-07-01 false Chickasaw Recreation Area. 7.50 Section 7.50 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR... around the Buckhorn Campground D Loop shoreline. (2) PWC may not be operated at greater than flat wake...

36 CFR 7.50 - Chickasaw Recreation Area.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 36 Parks, Forests, and Public Property 1 2014-07-01 2014-07-01 false Chickasaw Recreation Area. 7.50 Section 7.50 Parks, Forests, and Public Property NATIONAL PARK SERVICE, DEPARTMENT OF THE INTERIOR... around the Buckhorn Campground D Loop shoreline. (2) PWC may not be operated at greater than flat wake...

24 CFR 236.750 - Form of lease.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 24 Housing and Urban Development 2 2013-04-01 2013-04-01 false Form of lease. 236.750 Section 236... INSURANCE AND INTEREST REDUCTION PAYMENT FOR RENTAL PROJECTS Rental Assistance Payments § 236.750 Form of lease. (a) Lease form. Eligible tenants shall be required to execute a lease in a form approved by the...

24 CFR 236.750 - Form of lease.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 24 Housing and Urban Development 2 2012-04-01 2012-04-01 false Form of lease. 236.750 Section 236... INSURANCE AND INTEREST REDUCTION PAYMENT FOR RENTAL PROJECTS Rental Assistance Payments § 236.750 Form of lease. (a) Lease form. Eligible tenants shall be required to execute a lease in a form approved by the...

24 CFR 236.750 - Form of lease.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 24 Housing and Urban Development 2 2011-04-01 2011-04-01 false Form of lease. 236.750 Section 236... INSURANCE AND INTEREST REDUCTION PAYMENT FOR RENTAL PROJECTS Rental Assistance Payments § 236.750 Form of lease. (a) Lease form. Eligible tenants shall be required to execute a lease in a form approved by the...

24 CFR 236.750 - Form of lease.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 24 Housing and Urban Development 2 2014-04-01 2014-04-01 false Form of lease. 236.750 Section 236... INSURANCE AND INTEREST REDUCTION PAYMENT FOR RENTAL PROJECTS Rental Assistance Payments § 236.750 Form of lease. (a) Lease form. Eligible tenants shall be required to execute a lease in a form approved by the...

Diode/magnetic tunnel junction cell for fully scalable matrix-based biochip

NASA Astrophysics Data System (ADS)

Cardoso, F. A.; Ferreira, H. A.; Conde, J. P.; Chu, V.; Freitas, P. P.; Vidal, D.; Germano, J.; Sousa, L.; Piedade, M. S.; Costa, B. A.; Lemos, J. M.

2006-04-01

Magnetoresistive biochips have been recently introduced for the detection of biomolecular recognition. In this work, the detection site incorporates a thin-film diode in series with a magnetic tunnel junction (MTJ), leading to a matrix-based biochip that can be easily scaled up to screen large numbers of different target analytes. The fabricated 16×16 cell matrix integrates hydrogenated amorphous silicon (a-Si:H) diodes with aluminum oxide barrier MTJ. Each detection site also includes a U-shaped current line for magnetically assisted target concentration at probe sites. The biochip is being integrated in a portable, credit card size electronics control platform. Detection of 250 nm diameter magnetic nanoparticles by one of the matrix cells is demonstrated.

Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

NASA Astrophysics Data System (ADS)

Shin, Min-Seok; Jo, Yun-Rae; Kwon, Oh-Kyong

2011-03-01

In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si:H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V.

Current-voltage characteristics in macroporous silicon/SiOx/SnO2:F heterojunctions.

PubMed

Garcés, Felipe A; Urteaga, Raul; Acquaroli, Leandro N; Koropecki, Roberto R; Arce, Roberto D

2012-07-25

We study the electrical characteristics of macroporous silicon/transparent conductor oxide junctions obtained by the deposition of fluorine doped-SnO2 onto macroporous silicon thin films using the spray pyrolysis technique. Macroporous silicon was prepared by the electrochemical anodization of a silicon wafer to produce pore sizes ranging between 0.9 to 1.2 μm in diameter. Scanning electronic microscopy was performed to confirm the pore filling and surface coverage. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in the dark and under illumination. In the best configuration, we obtain a modest open-circuit voltage of about 70 mV and a short-circuit current of 3.5 mA/cm2 at an illumination of 110 mW/cm2. In order to analyze the effects of the illumination on the electrical properties of the junction, we proposed a model of two opposing diodes, each one associated with an independent current source. We obtain a good accordance between the experimental data and the model. The current-voltage curves in illuminated conditions are well fitted with the same parameters obtained in the dark where only the photocurrent intensities in the diodes are free parameters.

Reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma.

PubMed

Kim, Da-Jin; Park, Jang-Soon; Kim, Cheol Ho; Hur, Jae; Kim, Choong-Ki; Cho, Young-Kyun; Ko, Jun-Bong; Park, Bonghyuk; Kim, Dongho; Choi, Yang-Kyu

2017-12-08

This paper describes the fabrication and characterization of a reconfigurable Yagi-Uda antenna based on a silicon reflector with a solid-state plasma. The silicon reflector, composed of serially connected p-i-n diodes, forms a highly dense solid-state plasma by injecting electrons and holes into the intrinsic region. When this plasma silicon reflector is turned on, the front-realized gain of the antenna increases by more than 2 dBi beyond 5.3 GHz. To achieve the large gain increment, the structure of the antenna is carefully designed with the aid of semiconductor device simulation and antenna simulation. By using an aluminum nitride (AlN) substrate with high thermal conductivity, self-heating effects from the high forward current in the p-i-n diode are efficiently suppressed. By comparing the antenna simulation data and the measurement data, we estimated the conductivity of the plasma silicon reflector in the on-state to be between 10 4 and 10 5  S/m. With these figures, silicon material with its technology is an attractive tunable material for a reconfigurable antenna, which has attracted substantial interest from many areas, such as internet of things (IoT) applications, wireless network security, cognitive radio, and mobile and satellite communications as well as from multiple-input-multiple-output (MIMO) systems.

48 CFR 750.7106-2 - Amendments without consideration.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Amendments without consideration. 750.7106-2 Section 750.7106-2 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect...

48 CFR 750.7106 - Standards for deciding cases.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Standards for deciding cases. 750.7106 Section 750.7106 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect...

Linear and passive silicon optical isolator

PubMed Central

Wang, Chen; Zhong, Xiao-Lan; Li, Zhi-Yuan

2012-01-01

On-chip optical isolation plays a key role in optical communications and computing based on silicon integrated photonic structures and has attracted great attentions for long years. Recently there have appeared hot controversies upon whether isolation of light can be realized via linear and passive photonic structures. Here we demonstrate optical isolation of infrared light in purely linear and passive silicon photonic structures. Both numerical simulations and experimental measurements show that the round-trip transmissivity of in-plane infrared light across a silicon photonic crystal slab heterojunction diode could be two orders of magnitudes smaller than the forward transmissivity at around 1,550 nm with a bandwidth of about 50 nm, indicating good performance of optical isolation. The occurrence of in-plane light isolation is attributed to the information dissipation due to off-plane and side-way scattering and selective modal conversion in the multiple-channel structure and has no conflict with the reciprocal principle. PMID:22993699

SU-E-T-376: Evaluation of a New Stereotactic Diode for Small Field Dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kralik, J; Kosterin, P; Mooij, R

2015-06-15

Purpose: To evaluate the performance of a new stereotactic diode for dosimetry of small photon fields. Methods: A new stereotactic diode, consisting of an unshielded p-type silicon chip, and with improved radiation hardness energy dependence was recently developed (IBA Dosimetry, Schwarzenbruch, Germany). The diode has an active volume of 0.6 mm dia. x 0.02 mm thick. Two new diodes were evaluated, one which was pre-irradiated to 100kGy with 10 MeV electrons and another which received no prior irradiation. Sensitivity, stability, reproducibility, and linearity as a function of dose were assessed. Beam profiles and small field output factors were measured onmore » a CyberKnife (CK) and compared with measurements using two commercially available diodes. Results: The new diodes exhibit linear behavior (within 0.6%) over a dose range 0.02 – 50 Gy; a commercially available device exhibits excursions of up to 4% over the same range. The sensitivity is 4.1 and 3.8 nC/Gy for the un-irradiated and pre-irradiated diodes, respectively. When irradiated with 150 Gy in dose increments of 5, 20 and 35 Gy, both new diodes provide a stable response within 0.5%. Output factors measured with the two new diodes are identical and compare favorably with other commercially available diodes and published data. Similarly, no differences in measured field size or penumbra were observed among the devices tested. Conclusion: The new diodes show excellent stability and sensitivity. The beam characterization in terms of output factors and beam profiles is consistent with that obtained with commercially available diodes.« less

48 CFR 750.7109-3 - Facts and evidence.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Facts and evidence. 750.7109-3 Section 750.7109-3 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign...

Design of a Tunable, Room Temperature, Continuous-Wave Terahertz Source and Detector using Silicon Waveguides

DTIC Science & Technology

2008-01-30

that will use conventional diode- or hotomultiplier-tube-based optical detectors , which are xtremely sensitive . . HEATING AND FREE-CARRIER IMITATIONS...CONTRACT NUMBER IN-HOUSE Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides 5b. GRANT...B 261Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides T. Baehr-Jones,1,* M. Hochberg,1,3

The silicon vidicon: Integration, storage and slow scan capability - Experimental observation of a secondary mode of operation.

NASA Technical Reports Server (NTRS)

Ando, K. J.

1971-01-01

Description of the performance of the silicon diode array vidicon - an imaging sensor which possesses wide spectral response, high quantum efficiency, and linear response. These characteristics, in addition to its inherent ruggedness, simplicity, and long-term stability and operating life make this device potentially of great usefulness for ground-base and spaceborne planetary and stellar imaging applications. However, integration and charged storage for periods greater than approximately five seconds are not possible at room temperature because of diode saturation from dark current buildup. Since dark current can be reduced by cooling, measurements were made in the range from -65 to 25 C. Results are presented on the extension of integration, storage, and slow scan capabilities achievable by cooling. Integration times in excess of 20 minutes were achieved at the lowest temperatures. The measured results are compared with results obtained with other types of sensors and the advantages of the silicon diode array vidicon for imaging applications are discussed.

Improving performance of Si/CdS micro-/nanoribbon p-n heterojunction light emitting diodes by trenched structure

NASA Astrophysics Data System (ADS)

Huang, Shiyuan; Wu, Yuanpeng; Ma, Xiangyang; Yang, Zongyin; Liu, Xu; Yang, Qing

2018-05-01

Realizing high performance silicon based light sources has been an unremitting pursuit for researchers. In this letter, we propose a simple structure to enhance electroluminescence emission and reduce the threshold of injected current of silicon/CdS micro-/nanoribbon p-n heterojunction visible light emitting diodes, by fabricating trenched structure on silicon substrate to mount CdS micro-/nanoribbon. A series of experiments and simulation analysis favors the rationality and validity of our mounting design. After mounting the CdS micro-/nanoribbon, the optical field confinement increases, and absorption and losses from high refractive silicon substrate are effectively reduced. Meanwhile the sharp change of silicon substrate near heterojunction also facilitates the balance between electron current and hole current, which substantially conduces to the stable amplification of electroluminescence emission in CdS micro-/nanoribbon.

Development and fabrication of a fast recovery, high voltage power diode

NASA Technical Reports Server (NTRS)

Berman, A. H.; Balodis, V.; Duffin, J. J.; Gaugh, C.; Kkaratnicki, H. M.; Troutman, G.

1981-01-01

The use of positive bevels for P-I-N mesa structures to achieve high voltages is described. The technique of glass passivation for mesa structures is described. The utilization of high energy radiation to control the lifetime of carriers in silicon is reported as a means to achieve fast recovery times. Characterization data is reported and is in agreement with design concepts developed for power diodes.

23 CFR 750.306 - Documentation for Federal participation.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Documentation for Federal participation. 750.306 Section 750.306 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners...

40 CFR 750.2 - Notice of proposed rulemaking.

Code of Federal Regulations, 2014 CFR

2014-07-01

..., technological innovation, the environment, and public health. (v) Major impacts of alternatives to the proposed... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Notice of proposed rulemaking. 750.2 Section 750.2 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES...

40 CFR 750.2 - Notice of proposed rulemaking.

Code of Federal Regulations, 2013 CFR

2013-07-01

..., technological innovation, the environment, and public health. (v) Major impacts of alternatives to the proposed... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Notice of proposed rulemaking. 750.2 Section 750.2 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES...

40 CFR 750.2 - Notice of proposed rulemaking.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., technological innovation, the environment, and public health. (v) Major impacts of alternatives to the proposed... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Notice of proposed rulemaking. 750.2 Section 750.2 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES...

40 CFR 750.2 - Notice of proposed rulemaking.

Code of Federal Regulations, 2010 CFR

2010-07-01

..., technological innovation, the environment, and public health. (v) Major impacts of alternatives to the proposed... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Notice of proposed rulemaking. 750.2 Section 750.2 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES...

40 CFR 750.2 - Notice of proposed rulemaking.

Code of Federal Regulations, 2012 CFR

2012-07-01

..., technological innovation, the environment, and public health. (v) Major impacts of alternatives to the proposed... 40 Protection of Environment 32 2012-07-01 2012-07-01 false Notice of proposed rulemaking. 750.2 Section 750.2 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) TOXIC SUBSTANCES...

Silicon carbide, a semiconductor for space power electronics

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Matus, Lawrence G.

1991-01-01

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

NASA Astrophysics Data System (ADS)

Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

2016-02-01

Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

21 CFR 7.50 - Public notification of recall.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Public notification of recall. 7.50 Section 7.50 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL ENFORCEMENT POLICY Recalls (Including Product Corrections)-Guidance on Policy, Procedures, and Industry...

33 CFR 207.750 - Puget Sound Area, Wash.

Code of Federal Regulations, 2010 CFR

2010-07-01

... Section 207.750 Navigation and Navigable Waters CORPS OF ENGINEERS, DEPARTMENT OF THE ARMY, DEPARTMENT OF DEFENSE NAVIGATION REGULATIONS § 207.750 Puget Sound Area, Wash. (a) Waterway connecting Port Townsend and... shall so be identified with the lockmaster. They shall be in compliance with Department of...

33 CFR 207.750 - Puget Sound Area, Wash.

Code of Federal Regulations, 2012 CFR

2012-07-01

... Section 207.750 Navigation and Navigable Waters CORPS OF ENGINEERS, DEPARTMENT OF THE ARMY, DEPARTMENT OF DEFENSE NAVIGATION REGULATIONS § 207.750 Puget Sound Area, Wash. (a) Waterway connecting Port Townsend and... shall so be identified with the lockmaster. They shall be in compliance with Department of...

33 CFR 207.750 - Puget Sound Area, Wash.

Code of Federal Regulations, 2011 CFR

2011-07-01

... Section 207.750 Navigation and Navigable Waters CORPS OF ENGINEERS, DEPARTMENT OF THE ARMY, DEPARTMENT OF DEFENSE NAVIGATION REGULATIONS § 207.750 Puget Sound Area, Wash. (a) Waterway connecting Port Townsend and... shall so be identified with the lockmaster. They shall be in compliance with Department of...

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Calculations of High-Current Characteristics of Silicon Diodes at Microwave Frequencies.

DTIC Science & Technology

1984-10-01

4,4rn .,,,1,v ’ + :.:: 60V, 104 UU ,... 55V’ •" :103 0i Figure 3. Peak forward current diensity as a function of applied frequency for various diode...8217.-,. ’ DRSMCLEP-L DISTRIBUTION (Cont’d) COMMANDER AIR FORCE WEAPONS LABORATORY US ARMY MISSILE COMMAND ATTN DR. BABU SINGARAJU, AFWL/NTC ATTN DRSMI- RHB , H

40 CFR 63.750 - Test methods and procedures.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 11 2014-07-01 2014-07-01 false Test methods and procedures. 63.750...) National Emission Standards for Aerospace Manufacturing and Rework Facilities § 63.750 Test methods and... engineering reference texts, or other equivalent methods. (2) The composite vapor pressure of a blended hand...

32 CFR 750.49 - Delegations of adjudicating authority.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Delegations of adjudicating authority. 750.49... CLAIMS REGULATIONS Military Claims Act § 750.49 Delegations of adjudicating authority. (a) Settlement...)(3) of this section may delegate all or part of their settlement authority. Such delegation must be...

32 CFR 750.49 - Delegations of adjudicating authority.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Delegations of adjudicating authority. 750.49... CLAIMS REGULATIONS Military Claims Act § 750.49 Delegations of adjudicating authority. (a) Settlement...)(3) of this section may delegate all or part of their settlement authority. Such delegation must be...

40 CFR 63.750 - Test methods and procedures.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 40 Protection of Environment 10 2011-07-01 2011-07-01 false Test methods and procedures. 63.750...) National Emission Standards for Aerospace Manufacturing and Rework Facilities § 63.750 Test methods and... period as part of an ambient ozone control program. (1)(i) Determine the total organic HAP weight...

40 CFR 63.750 - Test methods and procedures.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 11 2013-07-01 2013-07-01 false Test methods and procedures. 63.750...) National Emission Standards for Aerospace Manufacturing and Rework Facilities § 63.750 Test methods and... period as part of an ambient ozone control program. (1)(i) Determine the total organic HAP weight...

40 CFR 63.750 - Test methods and procedures.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 40 Protection of Environment 11 2012-07-01 2012-07-01 false Test methods and procedures. 63.750...) National Emission Standards for Aerospace Manufacturing and Rework Facilities § 63.750 Test methods and... period as part of an ambient ozone control program. (1)(i) Determine the total organic HAP weight...

40 CFR 63.750 - Test methods and procedures.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 40 Protection of Environment 10 2010-07-01 2010-07-01 false Test methods and procedures. 63.750...) National Emission Standards for Aerospace Manufacturing and Rework Facilities § 63.750 Test methods and... period as part of an ambient ozone control program. (1)(i) Determine the total organic HAP weight...

Direct detection optical intersatellite link at 220 Mbps using AlGaAs laser diode and silicon APD with 4-ary PPM signaling

NASA Technical Reports Server (NTRS)

Sun, Xiaoli; Davidson, Frederic M.

1990-01-01

A newly developed 220 Mbps free-space 4-ary pulse position modulation (PPM) direct detection optical communication system is described. High speed GaAs integrated circuits were used to construct the PPM encoder and receiver electronic circuits. Both PPM slot and word timing recovery were provided in the PPM receiver. The optical transmitter consisted of an AlGaAs laser diode (Mitsubishi ML5702A, lambda=821nm) and a high speed driver unit. The photodetector consisted of a silicon avalanche photodiode (APD) (RCA30902S) preceded by an optical interference filter (delta lambda=10nm). Preliminary tests showed that the self-synchronized PPM receiver could achieve a receiver bit error rate of less than 10(exp -6) at 25 nW average received optical signal power or 360 photons per transmitted information bit. The relatively poor receiver sensitivity was believed to be caused by the insufficient electronic bandwidth of the APD preamplifier and the poor linearity of the preamplifier high frequency response.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality

Interpreting 750 GeV diphoton excess in plain NMSSM

DOE PAGES

Badziak, Marcin; Olechowski, Marek; Pokorski, Stefan; ...

2016-06-29

NMSSM has enough ingredients to explain the diphoton excess at 750 GeV: singlet-like (pseudo) scalar (a) s and higgsinos as heavy vector-like fermions. We consider the production of the 750 GeV singlet-like pseudo scalar a from a decay of the doublet-like pseudo scalar A, and the subsequent decay of a into two photons via higgsino loop. We demonstrate that this cascade decay of the NMSSM Higgs bosons can explain the diphoton excess at 750 GeV.

23 CFR 750.154 - Standards for directional signs.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Standards for directional signs. 750.154 Section 750.154 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY... the State permits the erection of any such signs under section 131(c) of title 23 U.S.C., and this...

Light-Emitting Diodes Based on Colloidal Silicon Quantum Dots with Octyl and Phenylpropyl Ligands.

PubMed

Liu, Xiangkai; Zhao, Shuangyi; Gu, Wei; Zhang, Yuting; Qiao, Xvsheng; Ni, Zhenyi; Pi, Xiaodong; Yang, Deren

2018-02-14

Colloidal silicon quantum dots (Si QDs) hold ever-growing promise for the development of novel optoelectronic devices such as light-emitting diodes (LEDs). Although it has been proposed that ligands at the surface of colloidal Si QDs may significantly impact the performance of LEDs based on colloidal Si QDs, little systematic work has been carried out to compare the performance of LEDs that are fabricated using colloidal Si QDs with different ligands. Here, colloidal Si QDs with rather short octyl ligands (Octyl-Si QDs) and phenylpropyl ligands (PhPr-Si QDs) are employed for the fabrication of LEDs. It is found that the optical power density of PhPr-Si QD LEDs is larger than that of Octyl-Si QD LEDs. This is due to the fact that the surface of PhPr-Si QDs is more oxidized and less defective than that of Octyl-Si QDs. Moreover, the benzene rings of phenylpropyl ligands significantly enhance the electron transport of QD LEDs. It is interesting that the external quantum efficiency (EQE) of PhPr-Si QD LEDs is lower than that of Octyl-Si QD LEDs because the benzene rings of phenylpropyl ligands suppress the hole transport of QD LEDs. The unbalance between the electron and hole injection in PhPr-Si QD LEDs is more serious than that in Octyl-Si QD LEDs. The currently obtained highest optical power density of ∼0.64 mW/cm 2 from PhPr-Si QD LEDs and highest EQE of ∼6.2% from Octyl-Si QD LEDs should encourage efforts to further advance the development of high-performance optoelectronic devices based on colloidal Si QDs.

An Avalanche Diode Electron Detector for Observing NEET

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kishimoto, Shunji

2004-05-12

Nuclear excitation by electron transition (NEET) occurs in atomic inner-shell ionization if the nuclear excitation and the electron transition have nearly the same energy and a common multipolarity. We successfully observed the NEET on 197Au and on 193Ir using a silicon avalanche diode electron detector. The detector was used to find internal conversion electrons emitted from excited nuclei in time spectroscopy with a time gate method. Some nuclear resonant levels, including 8.410 keV on 169Tm and 80.577 keV on 166Er, were also observed with the detector.

23 CFR 750.711 - Structures which have never displayed advertising material.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Structures which have never displayed advertising material. 750.711 Section 750.711 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising Control § 750.711 Structures...

A study of temperature-related non-linearity at the metal-silicon interface

NASA Astrophysics Data System (ADS)

Gammon, P. M.; Donchev, E.; Pérez-Tomás, A.; Shah, V. A.; Pang, J. S.; Petrov, P. K.; Jennings, M. R.; Fisher, C. A.; Mawby, P. A.; Leadley, D. R.; McN. Alford, N.

2012-12-01

In this paper, we investigate the temperature dependencies of metal-semiconductor interfaces in an effort to better reproduce the current-voltage-temperature (IVT) characteristics of any Schottky diode, regardless of homogeneity. Four silicon Schottky diodes were fabricated for this work, each displaying different degrees of inhomogeneity; a relatively homogeneous NiV/Si diode, a Ti/Si and Cr/Si diode with double bumps at only the lowest temperatures, and a Nb/Si diode displaying extensive non-linearity. The 77-300 K IVT responses are modelled using a semi-automated implementation of Tung's electron transport model, and each of the diodes are well reproduced. However, in achieving this, it is revealed that each of the three key fitting parameters within the model display a significant temperature dependency. In analysing these dependencies, we reveal how a rise in thermal energy "activates" exponentially more interfacial patches, the activation rate being dependent on the carrier concentration at the patch saddle point (the patch's maximum barrier height), which in turn is linked to the relative homogeneity of each diode. Finally, in a review of Tung's model, problems in the divergence of the current paths at low temperature are explained to be inherent due to the simplification of an interface that will contain competing defects and inhomogeneities.

23 CFR 750.304 - State policies and procedures.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false State policies and procedures. 750.304 Section 750.304... removal program under State law and complying with 23 U.S.C. 131 and its proposed time schedule for sign... severance damages pursuant to 23 CFR 710.304(h), and the law of the State before Federal participation will...

20 CFR 670.750 - Who may provide continued services for graduates?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false Who may provide continued services for graduates? 670.750 Section 670.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF....750 Who may provide continued services for graduates? Placement agencies, centers or other agencies...

20 CFR 670.750 - Who may provide continued services for graduates?

Code of Federal Regulations, 2011 CFR

2011-04-01

... 20 Employees' Benefits 3 2011-04-01 2011-04-01 false Who may provide continued services for graduates? 670.750 Section 670.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF....750 Who may provide continued services for graduates? Placement agencies, centers or other agencies...

48 CFR 750.7109 - Submission of requests by contractors.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Submission of requests by contractors. 750.7109 Section 750.7109 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect...

Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

NASA Astrophysics Data System (ADS)

Nichols, Jonathan A.

Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

20 CFR 670.750 - Who may provide continued services for graduates?

Code of Federal Regulations, 2012 CFR

2012-04-01

... 20 Employees' Benefits 4 2012-04-01 2012-04-01 false Who may provide continued services for graduates? 670.750 Section 670.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF... Services § 670.750 Who may provide continued services for graduates? Placement agencies, centers or other...

20 CFR 670.750 - Who may provide continued services for graduates?

Code of Federal Regulations, 2014 CFR

2014-04-01

... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false Who may provide continued services for graduates? 670.750 Section 670.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF... Services § 670.750 Who may provide continued services for graduates? Placement agencies, centers or other...

20 CFR 670.750 - Who may provide continued services for graduates?

Code of Federal Regulations, 2013 CFR

2013-04-01

... 20 Employees' Benefits 4 2013-04-01 2013-04-01 false Who may provide continued services for graduates? 670.750 Section 670.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF... Services § 670.750 Who may provide continued services for graduates? Placement agencies, centers or other...

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure.

PubMed

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go; Arai, Yasuo

2017-12-23

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO₂ interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e - rms , low dark current density of 56 pA/cm² at -35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV.

A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure

PubMed Central

Kamehama, Hiroki; Kawahito, Shoji; Shrestha, Sumeet; Nakanishi, Syunta; Yasutomi, Keita; Takeda, Ayaki; Tsuru, Takeshi Go

2017-01-01

This paper presents a novel full-depletion Si X-ray detector based on silicon-on-insulator pixel (SOIPIX) technology using a pinned depleted diode structure, named the SOIPIX-PDD. The SOIPIX-PDD greatly reduces stray capacitance at the charge sensing node, the dark current of the detector, and capacitive coupling between the sensing node and SOI circuits. These features of the SOIPIX-PDD lead to low read noise, resulting high X-ray energy resolution and stable operation of the pixel. The back-gate surface pinning structure using neutralized p-well at the back-gate surface and depleted n-well underneath the p-well for all the pixel area other than the charge sensing node is also essential for preventing hole injection from the p-well by making the potential barrier to hole, reducing dark current from the Si-SiO2 interface and creating lateral drift field to gather signal electrons in the pixel area into the small charge sensing node. A prototype chip using 0.2 μm SOI technology shows very low readout noise of 11.0 e−rms, low dark current density of 56 pA/cm2 at −35 °C and the energy resolution of 200 eV(FWHM) at 5.9 keV and 280 eV (FWHM) at 13.95 keV. PMID:29295523

Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

1998-01-01

Concern over the interference of stray radiofrequency (RF) emissions with key aircraft avionics is evident during takeoff and landing of every commercial flight when the flight attendant requests that all portable electronics be switched off. The operation of key radio-based avionics (such as glide-slope and localizer approach instruments) depends on the ability of front-end RF receivers to detect and amplify desired information signals while rejecting interference from undesired RF sources both inside and outside the aircraft. Incidents where key navigation and approach avionics malfunction because of RF interference clearly represent an increasing threat to flight safety as the radio spectrum becomes more crowded. In an initial feasibility experiment, the U.S. Army Research Laboratory and the NASA Lewis Research Center recently demonstrated the strategic use of silicon carbide (SiC) semiconductor components to significantly reduce the susceptibility of an RF receiver circuit to undesired RF interference. A pair of silicon carbide mixer diodes successfully reduced RF interference (intermodulation distortion) in a prototype receiver circuit by a factor of 10 (20 dB) in comparison to a pair of commercial silicon-based mixer diodes.

Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC

DTIC Science & Technology

2006-05-01

switches that are used in power conditioning systems. Silicon carbide diodes are now available commercially, and transistors (JEFETs, MOSFETs, IGBTs ...in UHP Ar for 60s in a rapid thermal annealing (RTA) furnace to achieve a low contact resistance. Following the RTA step, photolithography was...with 20μm Au is shown in Figure 3-4. The brazing process was performed with an SST 3150 high vacuum furnace . The 3150 utilizes an oil-free roughing

42 CFR 403.750 - Estimate of expenditures and adjustments.

Code of Federal Regulations, 2011 CFR

2011-10-01

... 42 Public Health 2 2011-10-01 2011-10-01 false Estimate of expenditures and adjustments. 403.750 Section 403.750 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL PROVISIONS SPECIAL PROGRAMS AND PROJECTS Religious Nonmedical Health Care Institutions...

42 CFR 403.750 - Estimate of expenditures and adjustments.

Code of Federal Regulations, 2014 CFR

2014-10-01

... 42 Public Health 2 2014-10-01 2014-10-01 false Estimate of expenditures and adjustments. 403.750 Section 403.750 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL PROVISIONS SPECIAL PROGRAMS AND PROJECTS Religious Nonmedical Health Care Institutions...

42 CFR 403.750 - Estimate of expenditures and adjustments.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 42 Public Health 2 2010-10-01 2010-10-01 false Estimate of expenditures and adjustments. 403.750 Section 403.750 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL PROVISIONS SPECIAL PROGRAMS AND PROJECTS Religious Nonmedical Health Care Institutions...

42 CFR 403.750 - Estimate of expenditures and adjustments.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 42 Public Health 2 2012-10-01 2012-10-01 false Estimate of expenditures and adjustments. 403.750 Section 403.750 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL PROVISIONS SPECIAL PROGRAMS AND PROJECTS Religious Nonmedical Health Care Institutions...

42 CFR 403.750 - Estimate of expenditures and adjustments.

Code of Federal Regulations, 2013 CFR

2013-10-01

... 42 Public Health 2 2013-10-01 2013-10-01 false Estimate of expenditures and adjustments. 403.750 Section 403.750 Public Health CENTERS FOR MEDICARE & MEDICAID SERVICES, DEPARTMENT OF HEALTH AND HUMAN SERVICES GENERAL PROVISIONS SPECIAL PROGRAMS AND PROJECTS Religious Nonmedical Health Care Institutions...

30 CFR 750.1 - Scope.

Code of Federal Regulations, 2011 CFR

2011-07-01

... REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.1 Scope. This subchapter provides for the regulation of surface coal mining and reclamation operations on Indian lands and constitutes the Federal program for Indian lands. ...

30 CFR 750.1 - Scope.

Code of Federal Regulations, 2010 CFR

2010-07-01

... REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.1 Scope. This subchapter provides for the regulation of surface coal mining and reclamation operations on Indian lands and constitutes the Federal program for Indian lands. ...

30 CFR 750.1 - Scope.

Code of Federal Regulations, 2012 CFR

2012-07-01

... REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.1 Scope. This subchapter provides for the regulation of surface coal mining and reclamation operations on Indian lands and constitutes the Federal program for Indian lands. ...

30 CFR 750.1 - Scope.

Code of Federal Regulations, 2014 CFR

2014-07-01

... REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.1 Scope. This subchapter provides for the regulation of surface coal mining and reclamation operations on Indian lands and constitutes the Federal program for Indian lands. ...

30 CFR 750.1 - Scope.

Code of Federal Regulations, 2013 CFR

2013-07-01

... REQUIREMENTS FOR SURFACE COAL MINING AND RECLAMATION OPERATIONS ON INDIAN LANDS § 750.1 Scope. This subchapter provides for the regulation of surface coal mining and reclamation operations on Indian lands and constitutes the Federal program for Indian lands. ...

Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films

NASA Astrophysics Data System (ADS)

Sato, Tadashi; Yamamoto, Kenichi; Kambara, Junji; Kitahara, Kuninori; Hara, Akito

2009-12-01

Hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) have attracted attention for application to the operation of organic light-emitting diodes (OLEDs). The monolithic integration of nc-Si:H TFTs and polycrystalline silicon (poly-Si) TFTs and the use of nc-Si:H TFTs for operating an OLED are candidate technologies to achieve OLED system-on-glass. To develop such a system, it is necessary to fabricate poly-Si films without employing thermal dehydrogenation because hydrogen needs to be maintained in the channel region of nc-Si:H TFTs. In this study, we optimized the laser dehydrogenation process as a substitute for thermal dehydrogenation by using a diode-pumped solid-state continuous-wave green laser (Nd:YVO4, 2ω=532 nm) to fabricate large lateral poly-Si films with grain sizes of 3×20 µm2. The performance of poly-Si TFTs is well known to be sensitive to the quality of poly-Si films. In order to evaluate the electrical properties of poly-Si films, TFTs were fabricated by conventional processes. The field-effect mobility, threshold voltage, and S-value of the poly-Si TFTs were 220 cm2 V-1 s-1, -1.0 V, and 0.45 V/dec, respectively. The quality of the poly-Si film fabricated in this experiment was sufficiently high for the integration of peripheral circuits.

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

2017-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

Suppression or knockout of SaF/SaM overcomes the Sa-mediated hybrid male sterility in rice.

PubMed

Xie, Yongyao; Niu, Baixiao; Long, Yunming; Li, Gousi; Tang, Jintao; Zhang, Yaling; Ren, Ding; Liu, Yao-Guang; Chen, Letian

2017-09-01

Hybrids between the indica and japonica subspecies of rice (Oryza sativa) are usually sterile, which hinders utilization of heterosis in the inter-subspecific hybrid breeding. The complex locus Sa comprises two adjacently located genes, SaF and SaM, which interact to cause abortion of pollen grains carrying the japonica allele in japonica-indica hybrids. Here we showed that silencing of SaF or SaM by RNA interference restored male fertility in indica-japonica hybrids with heterozygous Sa. We further used clustered regularly interspaced short palindromic repeats (CRISPR)/Cas9-based genome editing to knockout the SaF and SaM alleles, respectively, of an indica rice line to create hybrid-compatible lines. The resultant artificial neutral alleles did not affect pollen viability and other agricultural traits, but did break down the reproductive barrier in the hybrids. We found that some rice lines have natural neutral allele Sa-n, which was compatible with the typical japonica or indica Sa alleles in hybrids. Our results demonstrate that SaF and SaM are required for hybrid male sterility, but are not essential for pollen development. This study provides effective approaches for the generation of hybrid-compatible lines by knocking out the Sa locus or using the natural Sa-n allele to overcome hybrid male sterility in rice breeding. © 2017 The Authors. Bioelectromagnetics published by Wiley Periodicals, Inc. © 2017 Institute of Botany, Chinese Academy of Sciences.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current.

PubMed

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

NASA Astrophysics Data System (ADS)

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Diode-pumped passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide nanosheets saturable absorber at 1066 nm

NASA Astrophysics Data System (ADS)

Li, M. X.; Jin, G. Y.; Li, Y.

2018-05-01

In this paper, we investigated the passively Q-switched Nd:GdTaO4 laser based on tungsten disulfide (WS2) saturable absorber (SA). The preparation method of WS2 SA was to attach the WS2-alcohol dispersion onto the quartz substrates. The diode-pumped passively Q-switched Nd:GdTaO4 laser operated at a central wavelength of 1066 nm. The stable pulse output could be obtained at the single pulse width of 560 ns. In a word, WS2 seems to be a suitable saturable absorber for solid state lasers.

20 CFR 404.750 - Evidence of a parent's support.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 2 2010-04-01 2010-04-01 false Evidence of a parent's support. 404.750 Section 404.750 Employees' Benefits SOCIAL SECURITY ADMINISTRATION FEDERAL OLD-AGE, SURVIVORS AND... parent's support. If you apply for parent's benefits, we will ask you for evidence to show that you...

Surface roughness and bacterial adhesion on root dentin treated with diode laser and conventional desensitizing agents.

PubMed

Cury, Maiza S; Silva, Camilla B; Nogueira, Ruchele D; Campos, Michelle G D; Palma-Dibb, Regina G; Geraldo-Martins, Vinicius R

2018-02-01

The treatments for dentin hypersensitivity (DH) may change the surface roughness of the root dentin, which can lead to biofilm accumulation, increasing the risk of root caries. The aim was to compare the surface roughness of root dentin after different treatments of DH and the biofilm formation on those surfaces. After initial surface roughness (Sa) assessment, 50 bovine root fragments received the following treatments (n = 10): G 1-no treatment; G2-5% sodium fluoride varnish; G3-professional application of a desensitizing dentifrice; G4-toothbrushing with a desensitizing dentifrice; and G5-diode laser application (908 nm; 1.5 W, 20 s). The Sa was reevaluated after treatments. Afterward, all samples were incubated in a suspension of Streptococcus mutans at 37 °C for 24 h. The colony-forming units (CFU) were counted using a stereoscope, and the results were expressed in CFU/mL. The one-way ANOVA and the Tukey's tests compared the roughness data and the results obtained on the bacterial adhesion test (α = 5%). G2 (2.3 ± 1.67%) showed similar Sa variation than G1 (0.25 ± 0.41%) and G5 (5.69 ± 0.99%), but different from group G3 (9.05 ± 2.39%). Group 4 showed the highest Sa variation (30.02 ± 3.83%; p < 0.05). Bacterial adhesion was higher in G4 (2208 ± 211.9), suggesting that bacterial growth is greater on rougher surfaces. The diode laser and the conventional treatments for DH may change the surface roughness of the root dentin, but only brushing with desensitizing dentifrice induced a higher bacteria accumulation on root dentin surface.

Optical Communication with Semiconductor Laser Diode. Interim Progress Report. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Davidson, Frederic; Sun, Xiaoli

1989-01-01

Theoretical and experimental performance limits of a free-space direct detection optical communication system were studied using a semiconductor laser diode as the optical transmitter and a silicon avalanche photodiode (APD) as the receiver photodetector. Optical systems using these components are under consideration as replacements for microwave satellite communication links. Optical pulse position modulation (PPM) was chosen as the signal format. An experimental system was constructed that used an aluminum gallium arsenide semiconductor laser diode as the transmitter and a silicon avalanche photodiode photodetector. The system used Q=4 PPM signaling at a source data rate of 25 megabits per second. The PPM signal format requires regeneration of PPM slot clock and word clock waveforms in the receiver. A nearly exact computational procedure was developed to compute receiver bit error rate without using the Gaussion approximation. A transition detector slot clock recovery system using a phase lock loop was developed and implemented. A novel word clock recovery system was also developed. It was found that the results of the nearly exact computational procedure agreed well with actual measurements of receiver performance. The receiver sensitivity achieved was the closest to the quantum limit yet reported for an optical communication system of this type.

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Fazi, Christian

1996-01-01

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

PubMed Central

2013-01-01

Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

PubMed

Chizh, Kirill V; Chapnin, Valery A; Kalinushkin, Victor P; Resnik, Vladimir Y; Storozhevykh, Mikhail S; Yuryev, Vladimir A

2013-04-17

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.

A silicon technology for millimeter-wave monolithic circuits

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-12-01

A silicon millimeter-wave integrated-circuit (SIMMWIC) technology that includes high-energy ion implantation and pulsed-laser annealing, secondary ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning has been developed. This technology has been applied to a SIMMWIC single-pole single-throw (SPST) switch and to IMPATT and p-i-n diode fabrication schemes. Thus, the SIMMWIC technology is a proven base for monolithic millimeter-wave sources and control circuit applications.

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Design and experimental testing of air slab caps which convert commercial electron diodes into dual purpose, correction-free diodes for small field dosimetry.

PubMed

Charles, P H; Cranmer-Sargison, G; Thwaites, D I; Kairn, T; Crowe, S B; Pedrazzini, G; Aland, T; Kenny, J; Langton, C M; Trapp, J V

2014-10-01

Two diodes which do not require correction factors for small field relative output measurements are designed and validated using experimental methodology. This was achieved by adding an air layer above the active volume of the diode detectors, which canceled out the increase in response of the diodes in small fields relative to standard field sizes. Due to the increased density of silicon and other components within a diode, additional electrons are created. In very small fields, a very small air gap acts as an effective filter of electrons with a high angle of incidence. The aim was to design a diode that balanced these perturbations to give a response similar to a water-only geometry. Three thicknesses of air were placed at the proximal end of a PTW 60017 electron diode (PTWe) using an adjustable "air cap". A set of output ratios (ORDet (fclin) ) for square field sizes of side length down to 5 mm was measured using each air thickness and compared to ORDet (fclin) measured using an IBA stereotactic field diode (SFD). kQclin,Qmsr (fclin,fmsr) was transferred from the SFD to the PTWe diode and plotted as a function of air gap thickness for each field size. This enabled the optimal air gap thickness to be obtained by observing which thickness of air was required such that kQclin,Qmsr (fclin,fmsr) was equal to 1.00 at all field sizes. A similar procedure was used to find the optimal air thickness required to make a modified Sun Nuclear EDGE detector (EDGEe) which is "correction-free" in small field relative dosimetry. In addition, the feasibility of experimentally transferring kQclin,Qmsr (fclin,fmsr) values from the SFD to unknown diodes was tested by comparing the experimentally transferred kQclin,Qmsr (fclin,fmsr) values for unmodified PTWe and EDGEe diodes to Monte Carlo simulated values. 1.0 mm of air was required to make the PTWe diode correction-free. This modified diode (PTWeair) produced output factors equivalent to those in water at all field sizes (5-50 mm

Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Miller, Sharon K. R.; Smith, Ian M.; Daniels, Christopher C.; Steinetz, Bruce M

2008-01-01

Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

PubMed

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

Silicon Carbide Technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.

2006-01-01

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

[A micro-silicon multi-slit spectrophotometer based on MEMS technology].

PubMed

Hao, Peng; Wu, Yi-Hui; Zhang, Ping; Liu, Yong-Shun; Zhang, Ke; Li, Hai-Wen

2009-06-01

A new mini-spectrophotometer was developed by adopting micro-silicon slit and pixel segmentation technology, and this spectrophotometer used photoelectron diode array as the detector by the back-dividing-light way. At first, the effect of the spectral bandwidth on the tested absorbance linear correlation was analyzed. A theory for the design of spectrophotometer's slit was brought forward after discussing the relationships between spectrophotometer spectrum band width and pre-and post-slits width. Then, the integrative micro-silicon-slit, which features small volume, high precision, and thin thickness, was manufactured based on the MEMS technology. Finally, a test was carried on linear absorbance solution by this spectrophotometer. The final result showed that the correlation coefficients were larger than 0.999, which means that the new mini-spectrophotometer with micro-silicon slit pixel segmentation has an obvious linear correlation.

Sinusoidal nanotextures for light management in silicon thin-film solar cells.

PubMed

Köppel, G; Rech, B; Becker, C

2016-04-28

Recent progresses in liquid phase crystallization enabled the fabrication of thin wafer quality crystalline silicon layers on low-cost glass substrates enabling conversion efficiencies up to 12.1%. Because of its indirect band gap, a thin silicon absorber layer demands for efficient measures for light management. However, the combination of high quality crystalline silicon and light trapping structures is still a critical issue. Here, we implement hexagonal 750 nm pitched sinusoidal and pillar shaped nanostructures at the sun-facing glass-silicon interface into 10 μm thin liquid phase crystallized silicon thin-film solar cell devices on glass. Both structures are experimentally studied regarding their optical and optoelectronic properties. Reflection losses are reduced over the entire wavelength range outperforming state of the art anti-reflective planar layer systems. In case of the smooth sinusoidal nanostructures these optical achievements are accompanied by an excellent electronic material quality of the silicon absorber layer enabling open circuit voltages above 600 mV and solar cell device performances comparable to the planar reference device. For wavelengths smaller than 400 nm and higher than 700 nm optical achievements are translated into an enhanced quantum efficiency of the solar cell devices. Therefore, sinusoidal nanotextures are a well-balanced compromise between optical enhancement and maintained high electronic silicon material quality which opens a promising route for future optimizations in solar cell designs for silicon thin-film solar cells on glass.

32 CFR 750.7 - Claims: Action by receiving command.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 32 National Defense 5 2011-07-01 2011-07-01 false Claims: Action by receiving command. 750.7... CLAIMS REGULATIONS General Provisions for Claims § 750.7 Claims: Action by receiving command. (a) Record date of receipt. The first command receiving a claim shall stamp or mark the date of receipt on the...

32 CFR 750.7 - Claims: Action by receiving command.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 32 National Defense 5 2013-07-01 2013-07-01 false Claims: Action by receiving command. 750.7... CLAIMS REGULATIONS General Provisions for Claims § 750.7 Claims: Action by receiving command. (a) Record date of receipt. The first command receiving a claim shall stamp or mark the date of receipt on the...

32 CFR 750.7 - Claims: Action by receiving command.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 32 National Defense 5 2010-07-01 2010-07-01 false Claims: Action by receiving command. 750.7... CLAIMS REGULATIONS General Provisions for Claims § 750.7 Claims: Action by receiving command. (a) Record date of receipt. The first command receiving a claim shall stamp or mark the date of receipt on the...

32 CFR 750.7 - Claims: Action by receiving command.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 32 National Defense 5 2014-07-01 2014-07-01 false Claims: Action by receiving command. 750.7... CLAIMS REGULATIONS General Provisions for Claims § 750.7 Claims: Action by receiving command. (a) Record date of receipt. The first command receiving a claim shall stamp or mark the date of receipt on the...

32 CFR 750.7 - Claims: Action by receiving command.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 32 National Defense 5 2012-07-01 2012-07-01 false Claims: Action by receiving command. 750.7... CLAIMS REGULATIONS General Provisions for Claims § 750.7 Claims: Action by receiving command. (a) Record date of receipt. The first command receiving a claim shall stamp or mark the date of receipt on the...

20 CFR 404.750 - Evidence of a parent's support.

Code of Federal Regulations, 2011 CFR

2011-04-01

... DISABILITY INSURANCE (1950- ) Evidence Evidence for Child's and Parent's Benefits § 404.750 Evidence of a parent's support. If you apply for parent's benefits, we will ask you for evidence to show that you... 20 Employees' Benefits 2 2011-04-01 2011-04-01 false Evidence of a parent's support. 404.750...

20 CFR 404.750 - Evidence of a parent's support.

Code of Federal Regulations, 2013 CFR

2013-04-01

... DISABILITY INSURANCE (1950- ) Evidence Evidence for Child's and Parent's Benefits § 404.750 Evidence of a parent's support. If you apply for parent's benefits, we will ask you for evidence to show that you... 20 Employees' Benefits 2 2013-04-01 2013-04-01 false Evidence of a parent's support. 404.750...

20 CFR 404.750 - Evidence of a parent's support.

Code of Federal Regulations, 2014 CFR

2014-04-01

... DISABILITY INSURANCE (1950- ) Evidence Evidence for Child's and Parent's Benefits § 404.750 Evidence of a parent's support. If you apply for parent's benefits, we will ask you for evidence to show that you... 20 Employees' Benefits 2 2014-04-01 2014-04-01 false Evidence of a parent's support. 404.750...

20 CFR 404.750 - Evidence of a parent's support.

Code of Federal Regulations, 2012 CFR

2012-04-01

... DISABILITY INSURANCE (1950- ) Evidence Evidence for Child's and Parent's Benefits § 404.750 Evidence of a parent's support. If you apply for parent's benefits, we will ask you for evidence to show that you... 20 Employees' Benefits 2 2012-04-01 2012-04-01 false Evidence of a parent's support. 404.750...

Fabrication and Characterization of ZnO Langmuir-Blodgett Film and Its Use in Metal-Insulator-Metal Tunnel Diode.

PubMed

Azad, Ibrahim; Ram, Manoj K; Goswami, D Yogi; Stefanakos, Elias

2016-08-23

Metal-insulator-metal tunnel diodes have great potential for use in infrared detection and energy harvesting applications. The quantum based tunneling mechanism of electrons in MIM (metal-insulator-metal) or MIIM (metal-insulator-insulator-metal) diodes can facilitate rectification at THz frequencies. In this study, the required nanometer thin insulating layer (I) in the MIM diode structure was fabricated using the Langmuir-Blodgett technique. The zinc stearate LB film was deposited on Au/Cr coated quartz, FTO, and silicon substrates, and then heat treated by varying the temperature from 100 to 550 °C to obtain nanometer thin ZnO layers. The thin films were characterized by XRD, AFM, FTIR, and cyclic voltammetry methods. The final MIM structure was fabricated by depositing chromium/nickel over the ZnO on Au/Cr film. The current voltage (I-V) characteristics of the diode showed that the conduction mechanism is electron tunneling through the thin insulating layer. The sensitivity of the diodes was as high as 32 V(-1). The diode resistance was ∼80 Ω (at a bias voltage of 0.78 V), and the rectification ratio at that bias point was about 12 (for a voltage swing of ±200 mV). The diode response exhibited significant nonlinearity and high asymmetry at the bias point, very desirable diode performance parameters for IR detection applications.

Hole transport in c-plane InGaN-based green laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yang; Liu, Jianping, E-mail: jpliu2010@sinano.ac.cn; Tian, Aiqin

2016-08-29

Hole transport in c-plane InGaN-based green laser diodes (LDs) has been investigated by both simulations and experiments. It is found that holes can overflow from the green double quantum wells (DQWs) at high current density, which reduces carrier injection efficiency of c-plane InGaN-based green LDs. A heavily silicon-doped layer right below the green DQWs can effectively suppress hole overflow from the green DQWs.

Silicon-based hot electron emitting substrate with double tunneling

NASA Astrophysics Data System (ADS)

Chen, Fei; Zhan, Xinghua; Salcic, Zoran; Wong, Chee Cheong; Gao, Wei

2017-07-01

We propose a novel silicon structure, Hot Electron Emitting Substrate (HEES), which exhibits important effect of repeated tunneling at two different voltage ranges, which we refer to as double tunneling. In ambient atmosphere and room temperature, the I-V characteristic of HEES shows two current peaks during voltage sweep from 2 to 15 V. These two peaks are formed by the Fowler-Nordheim (FN) tunneling effect and tunneling diode mechanism, respectively.

Effects of Atomic Oxygen and Grease on Outgassing and Adhesion of Silicone Elastomers for Space Applications

NASA Astrophysics Data System (ADS)

de Groh, Henry C.; Puleo, Bernadette J.; Steinetz, Bruce M.

An investigation of silicone elastomers for seals used in docking and habitat systems for future space exploration vehicles is being conducted at NASA. For certain missions, NASA is considering androgynous docking systems where two vehicles each having a seal would be required to: dock for a period of time, seal effectively, and then separate with minimum push-off forces for undocking. Silicone materials are generally chosen for their wide operating temperatures and low leakage rates. However silicone materials are often sticky and usually exhibit considerable adhesion when mated against metals and silicone surfaces. This paper investigates the adhesion unit pressure for a space rated silicone material (S0383-70) for either seal-on-seal (SoS) or seal-on-aluminum (SoAl) operation modes in the following conditions: as-received, after ground-based atomic-oxygen (AO) pre-treatment, after application of a thin coating of a space-qualified grease (Braycote 601EF), and after a combination of AO pre-treatment and grease coating. In order of descending adhesion reduction, the AO treatment reduced seal adhesion the most, followed by the AO plus grease pre-treatment, followed by the grease treatment. The effects of various treatments on silicone (S0383-70 and ELA-SA-401) outgassing properties were also investigated. The leading adhesion AO pre-treatment reduction led to a slight decrease in outgassing for the S0383-70 material and virtually no change in ELA-SA-401 outgassing.

Effects of Atomic Oxygen and Grease on Outgassing and Adhesion of Silicone Elastomers for Space Applications

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Puleo, Bernadette J.; Steinetz, Bruce M.

2011-01-01

An investigation of silicone elastomers for seals used in docking and habitat systems for future space exploration vehicles is being conducted at NASA. For certain missions, NASA is considering androgynous docking systems where two vehicles each having a seal would be required to: dock for a period of time, seal effectively, and then separate with minimum push-off forces for undocking. Sili-cone materials are generally chosen for their wide operating temperatures and low leakage rates. However silicone materials are often sticky and usually exhibit considerable adhesion when mated against metals and silicone surfaces. This paper investigates the adhesion unit pressure for a space rated silicone material (S0383-70) for either seal-on-seal (SoS) or seal-on-aluminum (SoAl) operation modes in the following conditions: as-received, after ground-based atomic-oxygen (AO) pre-treatment, after application of a thin coating of a space-qualified grease (Bray-cote 601EF), and after a combination of AO pre-treatment and grease coating. In order of descending adhesion reduction, the AO treatment reduced seal adhesion the most, followed by the AO plus grease pre-treatment, followed by the grease treatment. The effects of various treatments on silicone (S0383-70 and ELA-SA-401) outgassing properties were also investigated. The leading adhesion AO pre-treatment reduction led to a slight decrease in outgassing for the S0383-70 material and virtually no change in ELA-SA-401 outgassing.

Effects of Atomic Oxygen and Grease on Outgassing and Adhesion of Silicone Elastomers for Space Applications

NASA Technical Reports Server (NTRS)

deGroh, Henry C., III; Puleo, Bernadette J.; Steinetz, Bruce M.

2012-01-01

An investigation of silicone elastomers for seals used in docking and habitat systems for future space exploration vehicles is being conducted at NASA. For certain missions, NASA is considering androgynous docking systems where two vehicles each having a seal would be required to: dock for a period of time, seal effectively, and then separate with minimum push-off forces for undocking. Silicone materials are generally chosen for their wide operating temperatures and low leakage rates. However silicone materials are often sticky and usually exhibit considerable adhesion when mated against metals and silicone surfaces. This paper investigates the adhesion unit pressure for a space rated silicone material (S0383-70) for either seal-on-seal (SoS) or seal-on-aluminum (SoAl) operation modes in the following conditions: as-received, after ground-based atomic-oxygen (AO) pre-treatment, after application of a thin coating of a space-qualified grease (Braycote 601EF), and after a combination of AO pre-treatment and grease coating. In order of descending adhesion reduction, the AO treatment reduced seal adhesion the most, followed by the AO plus grease pre-treatment, followed by the grease treatment. The effects of various treatments on silicone (S0383-70 and ELA-SA-401) outgassing properties were also investigated. The leading adhesion AO pretreatment reduction led to a slight decrease in outgassing for the S0383-70 material and virtually no change in ELA-SA-401 outgassing.

Absolute flatness measurements of silicon mirrors by a three-intersection method by near-infrared interferometry

PubMed Central

2013-01-01

Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer. The interferometer was constructed using a near-infrared laser diode with a 1,310-nm wavelength light where the silicon plane mirror is transparent. The height differences at the coordinate values between the absolute line profiles by the three-intersection method have been evaluated. The height differences of the three flats were 4.5 nm or less. The three-intersection method using the near-infrared interferometer was useful for measuring the absolute flatness of the silicon plane mirrors. PMID:23758916

Energetic Beam Processing of Silicon to Engineer Optoelectronically Active Defects

NASA Astrophysics Data System (ADS)

Recht, Daniel

This thesis explores ways to use ion implantation and nanosecond pulsed laser melting, both energetic beam techniques, to engineer defects in silicon. These defects are chosen to facilitate the use of silicon in optoelectronic applications for which its indirect bandgap is not ideal. Chapter 2 develops a kinetic model for the use of point defects as luminescence centers for light-emitting diodes and demonstrates an experimental procedure capable of high-throughput screening of the electroluminescent properties of such defects. Chapter 3 discusses the dramatic change in optical absorption observed in silicon highly supersaturated (i.e., hyperdoped) with the chalcogens sulfur, selenium, and tellurium and reports the first measurements of the optical absorption of such materials for photon energies greater than the bandgap of silicon. Chapter 3 examines the use of silicon hyperdoped with chalcogens in light detectors and concludes that while these devices display strong internal gain that is coupled to a particular type of surface defect, hyperdoping with chalcogens does not lead directly to measurable sub-bandgap photoconductivity. Chapter 4 considers the potential for Silicon to serve as the active material in an intermediate-band solar cell and reports experimental progress on two proposed approaches for hyperdoping silicon for this application. The main results of this chapter are the use of native-oxide etching to control the surface evaporation rate of sulfur from silicon and the first synthesis of monocrystalline silicon hyperdoped with gold.

3D-Printable Silicone Materials with Hydrogen Getter Capability

DOE PAGES

Ortiz-Acosta, Denisse; Moore, Tanya; Safarik, Douglas Joseph; ...

2018-03-01

Organic getters are used to reduce the amount of reactive hydrogen in applications such as nuclear plants and transuranic waste. Here, the present study examines the performance of getter loaded silicone elastomers in reducing reactive hydrogen gas from the gas phase and their capability of being 3D printed using direct ink writing techniques. The samples are placed in closed vessels and exposed to hydrogen atmosphere at pressures of 580 torr and 750 mtorr and at a temperature of 25 °C. The hydrogen consumption is measured as a function of time and normalized to getter concentration in the polymer. The performancemore » of the getter-loaded silicone elastomer containing 1,4-bis[phenylethynyl]benzene (DEB) as the organic getter and Pd/C catalyst (ratio of 3:1 DEB to catalyst) decreases with increasing the resin's curing temperature. Chemical analysis suggests that DEB reacts with the silicone resin at high temperatures. In addition, it is demonstrated that the increased surface area of 3D printed composites results in improved getter performance.« less

3D-Printable Silicone Materials with Hydrogen Getter Capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ortiz-Acosta, Denisse; Moore, Tanya; Safarik, Douglas Joseph

Organic getters are used to reduce the amount of reactive hydrogen in applications such as nuclear plants and transuranic waste. Here, the present study examines the performance of getter loaded silicone elastomers in reducing reactive hydrogen gas from the gas phase and their capability of being 3D printed using direct ink writing techniques. The samples are placed in closed vessels and exposed to hydrogen atmosphere at pressures of 580 torr and 750 mtorr and at a temperature of 25 °C. The hydrogen consumption is measured as a function of time and normalized to getter concentration in the polymer. The performancemore » of the getter-loaded silicone elastomer containing 1,4-bis[phenylethynyl]benzene (DEB) as the organic getter and Pd/C catalyst (ratio of 3:1 DEB to catalyst) decreases with increasing the resin's curing temperature. Chemical analysis suggests that DEB reacts with the silicone resin at high temperatures. In addition, it is demonstrated that the increased surface area of 3D printed composites results in improved getter performance.« less

Study of the properties of silicon-based semiconductor converters for betavoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polikarpov, M. A.; Yakimov, E. B., E-mail: yakimov@iptm.ru

2015-06-15

Silicon p-i-n diodes are studied in a scanning electron microscope under conditions simulating the β-radiation from a radioactive Ni{sup 63} source with an activity of 10 mCi/cm{sup 2}. The attainable parameters of β-voltaic cells with a source of this kind and a silicon-based converter of β-particle energy to electric current are estimated. It is shown that the power of elements of this kind can reach values of ∼10 nW/cm{sup 2} even for a cell with an area of one centimeter, which is rather close to the calculated value.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NASA Astrophysics Data System (ADS)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rangel-Kuoppa, Victor-Tapio; Jantsch, Wolfgang; Tonkikh, Alexander

2013-12-04

The Negative Differential Capacitance (NDC) effect on Ti Schottky diodes formed on n-type Silicon samples with embedded Germanium Quantum Dots (QDs) is observed and reported. The NDC-effect is detected using capacitance-voltage (CV) method at temperatures below 200 K. It is explained by the capture of electrons in Germanium QDs. Our measurements reveal that each Ge QD captures in average eight electrons.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Özaydın, C.; Güllü, Ö., E-mail: omergullu@gmail.com; Pakma, O.

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vismore » spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.« less

12 CFR 750.7 - Applicability in the event of liquidation or conservatorship.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 12 Banks and Banking 7 2014-01-01 2014-01-01 false Applicability in the event of liquidation or conservatorship. 750.7 Section 750.7 Banks and Banking NATIONAL CREDIT UNION ADMINISTRATION REGULATIONS AFFECTING CREDIT UNIONS GOLDEN PARACHUTE AND INDEMNIFICATION PAYMENTS § 750.7 Applicability in the event of...

20 CFR 641.750 - Will there be performance-related incentives?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false Will there be performance-related incentives? 641.750 Section 641.750 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF... incentive awards. The Department will exercise this authority at its discretion. ...

Design and characterization of GaN p-i-n diodes for betavoltaic devices

NASA Astrophysics Data System (ADS)

Khan, Muhammad R.; Smith, Joshua R.; Tompkins, Randy P.; Kelley, Stephen; Litz, Marc; Russo, John; Leathersich, Jeff; Shahedipour-Sandvik, Fatemeh (Shadi); Jones, Kenneth A.; Iliadis, Agis

2017-10-01

The performance of gallium nitride (GaN) p-i-n diodes were investigated for use as a betavoltaic device. Dark IV measurements showed a turn on-voltage of approximately 3.2 V, specific-on-resistance of 15.1 mΩ cm2 and a reverse leakage current of -0.14 mA/cm2 at -10 V. A clear photo-response was observed when IV curves were measured under a light source at a wavelength of 310 nm (4.0 eV). In addition, GaN p-i-n diodes were tested under an electron-beam in order to simulate common beta radiation sources ranging from that of 3H (5.6 keV average) to 63Ni (17 keV average). From this data, we estimated output powers of 53 nW and 750 nW with overall efficiencies of 0.96% and 4.4% for our device at incident electron energies of 5.6 keV and 17 keV corresponding to 3H and 63Ni beta sources respectively.

Comparative dosimetry of diode and diamond detectors in electron beams for intraoperative radiation therapy.

PubMed

Björk, P; Knöös, T; Nilsson, P

2000-11-01

The aim of the present study is to examine the validity of using silicon semiconductor detectors in degraded electron beams with a broad energy spectrum and a wide angular distribution. A comparison is made with diamond detector measurements, which is the dosimeter considered to give the best results provided that dose rate effects are corrected for. Two-dimensional relative absorbed dose distributions in electron beams (6-20 MeV) for intraoperative radiation therapy (IORT) are measured in a water phantom. To quantify deviations between the detectors, a dose comparison tool that simultaneously examines the dose difference and distance to agreement (DTA) is used to evaluate the results in low- and high-dose gradient regions, respectively. Uncertainties of the experimental measurement setup (+/- 1% and +/- 0.5 mm) are taken into account by calculating a composite distribution that fails this dose-difference and DTA acceptance limit. Thus, the resulting area of disagreement should be related to differences in detector performance. The dose distributions obtained with the diode are generally in very good agreement with diamond detector measurements. The buildup region and the dose falloff region show good agreement with increasing electron energy, while the region outside the radiation field close to the water surface shows an increased difference with energy. The small discrepancies in the composite distributions are due to several factors: (a) variation of the silicon-to-water collision stopping-power ratio with electron energy, (b) a more pronounced directional dependence for diodes than for diamonds, and (c) variation of the electron fluence perturbation correction factor with depth. For all investigated treatment cones and energies, the deviation is within dose-difference and DTA acceptance criteria of +/- 3% and +/- 1 mm, respectively. Therefore, p-type silicon diodes are well suited, in the sense that they give results in close agreement with diamond detectors

21 CFR 556.750 - Virginiamycin.

Code of Federal Regulations, 2012 CFR

2012-04-01

... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS, FEEDS, AND RELATED PRODUCTS TOLERANCES FOR RESIDUES OF NEW ANIMAL DRUGS IN FOOD Specific Tolerances for Residues of New Animal Drugs § 556.750 Virginiamycin. (a) Acceptable daily intake (ADI). The ADI for total...

21 CFR 556.750 - Virginiamycin.

Code of Federal Regulations, 2013 CFR

2013-04-01

... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS, FEEDS, AND RELATED PRODUCTS TOLERANCES FOR RESIDUES OF NEW ANIMAL DRUGS IN FOOD Specific Tolerances for Residues of New Animal Drugs § 556.750 Virginiamycin. (a) Acceptable daily intake (ADI). The ADI for total...

21 CFR 556.750 - Virginiamycin.

Code of Federal Regulations, 2014 CFR

2014-04-01

... Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) ANIMAL DRUGS, FEEDS, AND RELATED PRODUCTS TOLERANCES FOR RESIDUES OF NEW ANIMAL DRUGS IN FOOD Specific Tolerances for Residues of New Animal Drugs § 556.750 Virginiamycin. (a) Acceptable daily intake (ADI). The ADI for total...

27 CFR 7.50 - Application.

Code of Federal Regulations, 2010 CFR

2010-04-01

... THE TREASURY LIQUORS LABELING AND ADVERTISING OF MALT BEVERAGES Advertising of Malt Beverages § 7.50... outdoor advertisement, or in any other printed or graphic matter, any advertisement of malt beverages, if such advertising is in, or is calculated to induce sales in, interstate or foreign commerce, or is...

48 CFR 750.7109-2 - Form of requests by contractors.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Form of requests by contractors. 750.7109-2 Section 750.7109-2 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect...

Studies of silicon PN junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1975-01-01

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

750 Reasons To Celebrate Chemistry!

PubMed

Compton, Neville

2017-06-12

Time to reflect: This issue marks the 750th issue of Chemistry-A European Journal. The journal has played a significant role in changing chemistry. Its history has featured top papers from top authors for more than 20 years. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Diode probes for spatiotemporal optical control of multiple neurons in freely moving animals

PubMed Central

Koos, Tibor; Buzsáki, György

2012-01-01

Neuronal control with high temporal precision is possible with optogenetics, yet currently available methods do not enable to control independently multiple locations in the brains of freely moving animals. Here, we describe a diode-probe system that allows real-time and location-specific control of neuronal activity at multiple sites. Manipulation of neuronal activity in arbitrary spatiotemporal patterns is achieved by means of an optoelectronic array, manufactured by attaching multiple diode-fiber assemblies to high-density silicon probes or wire tetrodes and implanted into the brains of animals that are expressing light-responsive opsins. Each diode can be controlled separately, allowing localized light stimulation of neuronal activators and silencers in any temporal configuration and concurrent recording of the stimulated neurons. Because the only connections to the animals are via a highly flexible wire cable, unimpeded behavior is allowed for circuit monitoring and multisite perturbations in the intact brain. The capacity of the system to generate unique neural activity patterns facilitates multisite manipulation of neural circuits in a closed-loop manner and opens the door to addressing novel questions. PMID:22496529

Characterization of WB/SiC Schottky Barrier Diodes Using I-V-T Method

NASA Astrophysics Data System (ADS)

Aldridge, James; Oder, Tom

2009-04-01

The importance of silicon carbide (SiC) semiconductor for high temperature and high power microelectronic device applications has long been established. We have fabricated SiC Schottky barrier diodes using tungsten boride (WB) as the Schottky contact. The diodes were characterized using the current-voltage-temperature method. The sample was mounted on a heated stage and the temperature varied from about 25 ^oC to 300 ^oC at intervals of 25 ^oC. From the Richardson's plot, we obtained an energy barrier height of 0.96 eV and a Richardson's constant of 71.2 AK-1cm-2. Using the modified Richardson's plot, we obtained a barrier height of 1.01 eV. From the variation of the ideality factor and the temperature, we determined a characteristic energy of 0.02 eV to 0.04 eV across the range of the measurement temperature. This implies that thermionic emission is dominant in the low measurement temperature range. Our results confirm the excellent thermal stability of WB/SiC Schottky barrier diodes.

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Construction of a fast, inexpensive rapid-scanning diode-array detector and spectrometer.

PubMed

Carter, T P; Baek, H K; Bonninghausen, L; Morris, R J; van Wart, H E

1990-10-01

A 512-element diode-array spectroscopic detection system capable of acquiring multiple spectra at a rate of 5 ms per spectrum with an effective scan rate of 102.9 kHz has been constructed. Spectra with fewer diode elements can also be acquired at scan rates up to 128 kHz. The detector utilizes a Hamamatsu silicon photodiode-array sensor that is interfaced to Hamamatsu driver/amplifier and clock generator boards and a DRA laboratories 12-bit 160-kHz analog-to-digital converter. These are standard, commercially available devices which cost approximately $3500. The system is interfaced to and controlled by an IBM XT microcomputer. Detailed descriptions of the home-built detector housing and control/interface circuitry are presented and its application to the study of the reaction of horseradish peroxidase with hydrogen peroxide is demonstrated.

Variable N-type negative resistance in an injection-gated double-injection diode

NASA Technical Reports Server (NTRS)

Kapoor, A. K.; Henderson, H. T.

1981-01-01

Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

Inverse design of an ultra-compact broadband optical diode based on asymmetric spatial mode conversion

PubMed Central

Callewaert, Francois; Butun, Serkan; Li, Zhongyang; Aydin, Koray

2016-01-01

The objective-first inverse-design algorithm is used to design an ultra-compact optical diode. Based on silicon and air only, this optical diode relies on asymmetric spatial mode conversion between the left and right ports. The first even mode incident from the left port is transmitted to the right port after being converted into an odd mode. On the other hand, same mode incident from the right port is reflected back by the optical diode dielectric structure. The convergence and performance of the algorithm are studied, along with a transform method that converts continuous permittivity medium into a binary material design. The optimal device is studied with full-wave electromagnetic simulations to compare its behavior under right and left incidences, in 2D and 3D settings as well. A parametric study is designed to understand the impact of the design space size and initial conditions on the optimized devices performance. A broadband optical diode behavior is observed after optimization, with a large rejection ratio between the two transmission directions. This illustrates the potential of the objective-first inverse-design method to design ultra-compact broadband photonic devices. PMID:27586852

48 CFR 750.7110-2 - Office of General Counsel coordination.

Code of Federal Regulations, 2010 CFR

2010-10-01

... 48 Federal Acquisition Regulations System 5 2010-10-01 2010-10-01 false Office of General Counsel coordination. 750.7110-2 Section 750.7110-2 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT MANAGEMENT EXTRAORDINARY CONTRACTUAL ACTIONS Extraordinary Contractual Actions To Protect Foreign Policy Interests of th...

Multifunctional hybrid diode: Study of photoresponse, high responsivity, and charge injection mechanisms

NASA Astrophysics Data System (ADS)

Singh, Jitendra; Singh, R. G.; Gautam, Subodh K.; Singh, Fouran

2018-05-01

A multifunctional hybrid heterojunction diode is developed on porous silicon and its current density-voltage characteristics reveal a good rectification ratio along with other superior parameters such as ideality factor, barrier height and series resistance. The diode also functions as an efficient photodiode to manifest high photosensitivity with high responsivity under illumination with broadband solar light, UV light, and green light. The diode is also carefully scrutinized for its sensitivity and repeatability over many cycles under UV and green light and is found to have a quick response and extremely fast recovery times. The notable responsivity is attributed to the generation of high density of excitons in the depletion region by the absorption of incident photons and their separation by an internal electric field besides an additional photocurrent due to the charging of polymer chains. The mechanisms of generation, injection and transport of charge carriers are explained by developing a schematic energy band diagram. The transport phenomenon of carriers is further investigated from room temperature down to a very low temperature of 10 K. An Arrhenius plot is made to determine the Richardson constant. Various diode parameters as mentioned above are also determined and the dominance of the transport mechanism of charge carriers in different temperature regimes such as diffusion across the junction and/or quantum tunneling through the barriers are explained. The developed multifunction heterojunction hybrid diodes have implications for highly sensitive photodiodes in the UV and visible range of electromagnetic spectrum that can be very promising for efficient optoelectronic devices.

Parameter variation of the one-diode model of a-Si and a- Si/μc-Si solar cells for modeling light-induced degradation

NASA Astrophysics Data System (ADS)

Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

2014-11-01

For analyzing the long-term behavior of thin film a-Si/μc-Si photovoltaic modules, it is important to observe the light-induced degradation (LID) in dependence of the temperature for the parameters of the one-diode model for solar cells. According to the IEC 61646 standard, the impact of LID on module parameters of these thin film cells is determined at a constant temperature of 50°C with an irradiation of 1000 W/m2 at open circuit conditions. Previous papers examined the LID of thin film a-Si cells with different temperatures and some others are about a-Si/μc-Si. In these previous papers not all parameters of the one-diode model are examined. We observed the serial resistance (Rs), parallel resistance (Rp), short circuit current (Isc), open circuit voltage (Uoc), the maximum power point (MPP: Umpp, Impp and Pmpp) and the diode factor (n). Since the main reason for the LID of silicon-based thin films is the Staebler Wronski effect in the a-Si part of the cell, the temperature dependence of the healing of defects for all parameters of the one-diode model is also taken into account. We are also measuring modules with different kind of transparent conductive oxides: In a-Si thin film solar cells fluorine-doped tin oxide (FTO) is used and for thin film solar cells of a-Si/μc-Si boron- doped zinc oxide is used. In our work we describe an approach for transferring the parameters of a one-diode model for tandem thin film solar cells into the one-diode model for each part of the solar cell. The measurement of degradation and regeneration at higher temperatures is the necessary base for optimization of the different silicon-based thin films in warm hot climate.

Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes

NASA Technical Reports Server (NTRS)

Kumar, Sandeep; Boyd, Joseph T.; Jackson, Howard E.

1987-01-01

Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.

Compact silicon-based optrode with integrated laser diode chips, SU-8 waveguides and platinum electrodes for optogenetic applications

NASA Astrophysics Data System (ADS)

Schwaerzle, M.; Paul, O.; Ruther, P.

2017-06-01

We report on a compact optrode, i.e. a MEMS-based, invasive, bidirectional neural interface allowing to control neural activity using light while neural signals are recorded nearby. The optrode consists of a silicon (Si) base carrying two pairs of bare laser diodes (LDs) emitting at 650 nm and of two 8 mm-long, 250 µm-wide and down to 50 µm-thick shanks extending from the base. Each LD is efficiently coupled to one of four 15 or 20 µm-wide and 13 µm-high SU-8 waveguides (WGs) running in pairs along the shanks. In addition, each shank comprises four 20 µm-diameter platinum electrodes for neural recording near the WG end facets. After encapsulation of the LDs with a Si cover chip blocking stray light and protecting the LDs from the harsh environment to which the probe is destined, the compact base measures only 4  ×  4  ×  0.43 mm3. The time averaged radiant emittance at the WG end facet is 96.9 mW mm-2 for an LD current of 35 mA at a duty cycle of 5%. The absolute electrode impedance at 1 kHz is 1.54  ±  0.06 MΩ. Using infrared thermography, the temperature increase of the probe during LD operation was determined to be about 1 K under neuroscientifically relevant operating conditions.

An overview of silicon carbide device technology

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Matus, Lawrence G.

1992-01-01

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

48 CFR 750.7110-1 - Investigation.

Code of Federal Regulations, 2011 CFR

2011-10-01

... Section 750.7110-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... contracting officer makes a thorough investigation of all facts and issues relevant to each situation. Facts and evidence shall be obtained from contractor and Government personnel and shall include signed...

48 CFR 750.7110-1 - Investigation.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Section 750.7110-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... contracting officer makes a thorough investigation of all facts and issues relevant to each situation. Facts and evidence shall be obtained from contractor and Government personnel and shall include signed...

48 CFR 750.7110-1 - Investigation.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Section 750.7110-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... contracting officer makes a thorough investigation of all facts and issues relevant to each situation. Facts and evidence shall be obtained from contractor and Government personnel and shall include signed...

48 CFR 750.7110-1 - Investigation.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Section 750.7110-1 Federal Acquisition Regulations System AGENCY FOR INTERNATIONAL DEVELOPMENT CONTRACT... contracting officer makes a thorough investigation of all facts and issues relevant to each situation. Facts and evidence shall be obtained from contractor and Government personnel and shall include signed...

750 GeV diphotons: implications for supersymmetric unification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hall, Lawrence J.; Harigaya, Keisuke; Nomura, Yasunori

2016-03-03

A recent signal of 750 GeV diphotons at the LHC can be explained within the framework of supersymmetric unification by the introduction of vector quarks and leptons with Yukawa couplings to a singlet S that describes the 750 GeV resonance. We study the most general set of theories that allow successful gauge coupling unification, and find that these Yukawa couplings are severely constrained by renormalization group behavior: they are independent of ultraviolet physics and flow to values at the TeV scale that we calculate precisely. As a consequence the vector quarks and leptons must be light; typically in the regionmore » of 375 GeV to 700 GeV, and in certain cases up to 1 TeV. The 750 GeV resonance may have a width less than the experimental resolution; alternatively, with the mass splitting between scalar and pseudoscalar components of S arising from one-loop diagrams involving vector fermions, we compute an apparent width of 10s of GeV.« less

7 CFR 3560.750 - OMB control number.

Code of Federal Regulations, 2010 CFR

2010-01-01

... AGRICULTURE DIRECT MULTI-FAMILY HOUSING LOANS AND GRANTS Unauthorized Assistance § 3560.750 OMB control number..., including time for reviewing instructions, searching existing data sources, gathering and maintaining the...

7 CFR 3560.750 - OMB control number.

Code of Federal Regulations, 2013 CFR

2013-01-01

... AGRICULTURE DIRECT MULTI-FAMILY HOUSING LOANS AND GRANTS Unauthorized Assistance § 3560.750 OMB control number..., including time for reviewing instructions, searching existing data sources, gathering and maintaining the...

7 CFR 3560.750 - OMB control number.

Code of Federal Regulations, 2011 CFR

2011-01-01

... AGRICULTURE DIRECT MULTI-FAMILY HOUSING LOANS AND GRANTS Unauthorized Assistance § 3560.750 OMB control number..., including time for reviewing instructions, searching existing data sources, gathering and maintaining the...

7 CFR 3560.750 - OMB control number.

Code of Federal Regulations, 2012 CFR

2012-01-01

... AGRICULTURE DIRECT MULTI-FAMILY HOUSING LOANS AND GRANTS Unauthorized Assistance § 3560.750 OMB control number..., including time for reviewing instructions, searching existing data sources, gathering and maintaining the...

7 CFR 3560.750 - OMB control number.

Code of Federal Regulations, 2014 CFR

2014-01-01

... AGRICULTURE DIRECT MULTI-FAMILY HOUSING LOANS AND GRANTS Unauthorized Assistance § 3560.750 OMB control number..., including time for reviewing instructions, searching existing data sources, gathering and maintaining the...

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

23 CFR 750.709 - On-property or on-premise advertising.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false On-property or on-premise advertising. 750.709 Section... exempt from control under 23 U.S.C. 131 if they solely advertise the sale or lease of property on which... signs are subject to regulation (subpart A, part 750, chapter I, 23 CFR) in those States which have...

48 CFR 750.7110-3 - Submission of cases to the M/OP Director.

Code of Federal Regulations, 2011 CFR

2011-10-01

... M/OP Director. 750.7110-3 Section 750.7110-3 Federal Acquisition Regulations System AGENCY FOR... Actions To Protect Foreign Policy Interests of the United States 750.7110-3 Submission of cases to the M/OP Director. Cases to be submitted for consideration by the M/OAA Director shall be prepared and...

Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Yu; Ye, Ziliang; Gharghi, Majid

2014-05-12

In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of amore » higher energy exciton peak of 2.255 eV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.« less

Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector

NASA Astrophysics Data System (ADS)

Cai, Wei; Wang, Wei; Zhu, Bingcheng; Gao, Xumin; Zhu, Guixia; Yuan, Jialei; Wang, Yongjin

2018-01-01

Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.

Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors

NASA Astrophysics Data System (ADS)

Shin, Hee-Sun; Lee, Won-Kyu; Park, Sang-Guen; Kuk, Seung-Hee; Han, Min-Koo

2009-03-01

A new hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) pixel circuit for active-matrix organic light emission diodes (AM-OLEDs), which significantly compensates the OLED current degradation by memorizing the threshold voltage of driving TFT and suppresses the threshold voltage shift of a-Si:H TFTs by negative bias annealing, is proposed and fabricated. During the first half of each frame, the driving TFT of the proposed pixel circuit supplies current to the OLED, which is determined by modified data voltage in the compensation scheme. The proposed pixel circuit was able to compensate the threshold voltage shift of the driving TFT as well as the OLED. During the remaining half of each frame, the proposed pixel circuit induces the recovery of the threshold voltage degradation of a-Si:H TFTs owing to the negative bias annealing. The experimental results show that the proposed pixel circuit was able to successfully compensate for the OLED current degradation and suppress the threshold voltage degradation of the driving TFT.

Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

NASA Astrophysics Data System (ADS)

Stupca, Matthew; Nayfeh, Osama M.; Hoang, Tuan; Nayfeh, Munir H.; Alhreish, Bahjat; Boparai, Jack; AlDwayyan, Abdullah; AlSalhi, Mohamad

2012-10-01

Present red phosphor converters provide spectra dominated by sharp lines and suffer from availability and stability issues which are not ideal for color mixing in display or solid state lighting applications. We examine the use of mono dispersed 3 nm silicon nanoparticles, with inhomogeneously broadened red luminescence as an effective substitute for red phosphors. We tested a 3-phase hybrid nanophosphor consisting of ZnS:Ag, ZnS:Cu,Au,Al, and nanoparticles. Correlated color temperature is examined under UV and LED pumping in the range 254, 365-400 nm. The temperature is found reasonably flat for the longer wavelengths and drops for the shorter wavelengths while the color rendering index increases. The photo stability of the phosphors relative to the silicon nanoparticles is recorded. The variation in the temperature is analyzed in terms of the strength of inter-band-gap transition and continuum band to band transitions.

Stimulated Terahertz Stokes Emission of Silicon Crystals Doped with Antimony Donors

NASA Astrophysics Data System (ADS)

Pavlov, S. G.; Hübers, H.-W.; Hovenier, J. N.; Klaassen, T. O.; Carder, D. A.; Phillips, P. J.; Redlich, B.; Riemann, H.; Zhukavin, R. Kh.; Shastin, V. N.

2006-01-01

Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon (≈2.92THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A1) donor states (separation ≈2.97THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.

23 CFR 750.305 - Federal participation.

Code of Federal Regulations, 2010 CFR

2010-04-01

... FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising (Acquisition of Rights of Sign and Sign Site Owners) § 750.305 Federal participation. (a) Federal funds may participate in: (1) Payments made to a sign owner for his right, title and...

Monolithic optical link in silicon-on-insulator CMOS technology.

PubMed

Dutta, Satadal; Agarwal, Vishal; Hueting, Raymond J E; Schmitz, Jurriaan; Annema, Anne-Johan

2017-03-06

This work presents a monolithic laterally-coupled wide-spectrum (350 nm < λ < 1270 nm) optical link in a silicon-on-insulator CMOS technology. The link consists of a silicon (Si) light-emitting diode (LED) as the optical source and a Si photodiode (PD) as the detector; both realized by vertical abrupt n⁺p junctions, separated by a shallow trench isolation composed of silicon dioxide. Medium trench isolation around the devices along with the buried oxide layer provides galvanic isolation. Optical coupling in both avalanche-mode and forward-mode operation of the LED are analyzed for various designs and bias conditions. From both DC and pulsed transient measurements, it is further shown that heating in the avalanche-mode LED leads to a slow thermal coupling to the PD with time constants in the ms range. An integrated heat sink in the same technology leads to a ∼ 6 times reduction in the change in PD junction temperature per unit electrical power dissipated in the avalanche-mode LED. The analysis paves way for wide-spectrum optical links integrated in smart power technologies.

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

NASA Astrophysics Data System (ADS)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

Silicon Photodiode Soft X-Ray Detectors for Pulsed Power Experiments

DTIC Science & Technology

1997-06-01

AXUV -100 silicon photodiode were performed at the National Institute of Standards and Technology (NIST), our Bechtel Nevada laboratories, and the...NSLS at Brookhaven National Laboratory. The AXUV -100 diode is covered with a 60 angstrom Si02 window over its entire surface. The higher response lobes...in the visible and at higher x-ray energies seen by the HS-1 are absent in the AXUV -100 calibrations. The two model calculations assume 2.73 x 105 A

23 CFR 750.706 - Sign control in zoned and unzoned commercial and industrial areas.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Sign control in zoned and unzoned commercial and industrial areas. 750.706 Section 750.706 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION Outdoor Advertising Control § 750.706 Sign...

33 CFR 80.750 - Sanibel Island, FL to St. Petersburg, FL.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Sanibel Island, FL to St. Petersburg, FL. 80.750 Section 80.750 Navigation and Navigable Waters COAST GUARD, DEPARTMENT OF HOMELAND... St. Petersburg, FL. (a) A line formed by the centerline of the highway bridge over Blind Pass...

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

PubMed

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Diode and Diode Circuits, a Programmed Text.

ERIC Educational Resources Information Center

Balabanian, Norman; Kirwin, Gerald J.

This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

PubMed

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-06-27

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

Transcanalicular Diode Laser-assisted Dacryocystorhinostomy for the Treatment of Primary Acquired Nasolacrimal Duct Obstruction.

PubMed

Mor, Joel M; Guo, Yongwei; Koch, Konrad R; Heindl, Ludwig M

2017-10-13

Today's gold standard in the treatment of infrasaccal primary acquired nasolacrimal duct obstruction (PANDO) is external dacryocystorhinostomy (DCR), a relatively invasive procedure that can be performed after failure of recanalizing treatments. However, with progress in the field of diode laser technology, new approaches have emerged. Laser-assisted transcanalicular DCR with subsequent bicanalicular silicon intubation is a new option showing great promise as a viable minimally invasive procedure. Under permanent endoscopic visual control from the nasal cavity, a diode laser fiber is inserted into the lacrimal sac and laser energy is applied to create a bony ostium between the lacrimal sac and the nasal cavity. Since no skin incision needs to be made, advantages of this method comprise the sparing of the skin as well as the medial palpebral structures and the physiological palpebral-canalicular pump mechanism. The duration of surgery as well as reconvalescence is generally shorter than with external DCR. Complications include silicon tube prolapse, mild swelling and, rarely, canalicular infection and thermal injury. One-year functional success rates, defined as complete resolution of symptoms and ostium patency, are high, yet still range behind those of external DCR. However, secondary external DCR after failure of laser-assisted DCR can be performed without difficulty. Thus, laser-assisted transcanalicular DCR is a valid option that should be considered as a second-step procedure after failure of recanalization procedures and before external DCR.

Low-Dose-Rate Computed Tomography System Utilizing 25 mm/s-Scan Silicon X-ray Diode and Its Application to Iodine K-Edge Imaging Using Filtered Bremsstrahlung Photons

NASA Astrophysics Data System (ADS)

Matsushita, Ryo; Sato, Eiichi; Yanbe, Yutaka; Chiba, Hiraku; Maeda, Tomoko; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Watanabe, Manabu; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira; Onagawa, Jun

2013-03-01

A low-dose-rate X-ray computed tomography (CT) system is useful for reducing absorbed dose for patients. The CT system with a tube current of sub-mA was developed using a silicon X-ray diode (Si-XD). The Si-XD is a high-sensitivity Si photodiode (PD) selected for detecting X-ray photons, and the X-ray sensitivity of the Si-XD was twice as high as that of Si-PD cerium-doped yttrium aluminum perovskite [YAP(Ce)]. X-ray photons are directly detected using the Si-XD without a scintillator, and the photocurrent from the diode is amplified using current-voltage and voltage-voltage amplifiers. The output voltage is converted into logical pulses using a voltage-frequency converter with a maximum frequency of 500 kHz, and the frequency is proportional to the voltage. The pulses from the converter are sent to the differentiator with a time constant of 500 ns to generate short positive pulses for counting, and the pulses are counted using a counter card. Tomography is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by the linear scan. The exposure time for obtaining a tomogram was 5 min at a scan step of 0.5 mm and a rotation step of 3.0°. The tube current and voltage were 0.55 mA and 60 kV, respectively, and iodine K-edge CT was carried out using filtered bremsstrahlung X-ray spectra with a peak energy of 38 keV.

23 CFR 750.710 - Landmark signs.

Code of Federal Regulations, 2011 CFR

2011-04-01

... Outdoor Advertising Control § 750.710 Landmark signs. (a) 23 U.S.C. 131(c) permits the existence of signs lawfully in existence on October 22, 1965, determined by the State, subject to the approval of the... artistic significance, the preservation of which is consistent with the purpose of 23 U.S.C. 131. (b...

23 CFR 750.710 - Landmark signs.

Code of Federal Regulations, 2010 CFR

2010-04-01

... Outdoor Advertising Control § 750.710 Landmark signs. (a) 23 U.S.C. 131(c) permits the existence of signs lawfully in existence on October 22, 1965, determined by the State, subject to the approval of the... artistic significance, the preservation of which is consistent with the purpose of 23 U.S.C. 131. (b...

Simulation of light-induced degradation of μc-Si in a-Si/μc-Si tandem solar cells by the diode equivalent circuit

NASA Astrophysics Data System (ADS)

Weicht, J. A.; Hamelmann, F. U.; Behrens, G.

2016-02-01

Silicon-based thin film tandem solar cells consist of one amorphous (a-Si) and one microcrystalline (μc-Si) silicon solar cell. The Staebler - Wronski effect describes the light- induced degradation and temperature-dependent healing of defects of silicon-based solar thin film cells. The solar cell degradation depends strongly on operation temperature. Until now, only the light-induced degradation (LID) of the amorphous layer was examined in a-Si/μc-Si solar cells. The LID is also observed in pc-Si single function solar cells. In our work we show the influence of the light-induced degradation of the μc-Si layer on the diode equivalent circuit. The current-voltage-curves (I-V-curves) for the initial state of a-Si/pc-Si modules are measured. Afterwards the cells are degraded under controlled conditions at constant temperature and constant irradiation. At fixed times the modules are measured at standard test conditions (STC) (AM1.5, 25°C cell temperature, 1000 W/m2) for controlling the status of LID. After the degradation the modules are annealed at dark conditions for several hours at 120°C. After the annealing the dangling bonds in the amorphous layer are healed, while the degradation of the pc-Si is still present, because the healing of defects in pc-Si solar cells needs longer time or higher temperatures. The solar cells are measured again at STC. With this laboratory measured I-V-curves we are able to separate the values of the diode model: series Rs and parallel resistance Rp, saturation current Is and diode factor n.

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

PubMed

Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

2014-04-24

A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Surface chemistry, microstructure and friction properties of some ferrous-base metallic glasses at temperatures to 750 C

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Buckley, D. H.

1982-01-01

X-ray photoelectron spectroscopy analysis, transmission electron microscopy, diffraction studies, and sliding friction experiments were conducted with ferrous-base metallic glasses in sliding contact with aluminum oxide at temperatures from room to 750 C in a vacuum of 30 nPa. The results indicate that there is a significant temperature influence on the friction properties, surface chemistry, and microstructure of metallic glasses. The relative concentrations of the various constituents at the surface of the sputtered specimens were very different from the normal bulk compositions. Contaminants can come from the bulk of the material to the surface upon heating and impart boric oxide and silicon oxide at 350 C and boron nitride above 500 C. The coefficient of friction increased with increasing temperature to 350 C. Above 500 C the coefficient of friction decreased rapidly. The segregation of contaminants may be responsible for the friction behavior.

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.

1972-01-01

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

Long-lifetime thin-film encapsulated organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Wong, F. L.; Fung, M. K.; Tao, S. L.; Lai, S. L.; Tsang, W. M.; Kong, K. H.; Choy, W. M.; Lee, C. S.; Lee, S. T.

2008-07-01

Multiple fluorocarbon (CFx) and silicon nitride (Si3N4) bilayers were applied as encapsulation cap on glass-based organic light-emitting diodes (OLEDs). When CFx/Si3N4 bilayers were deposited onto the OLED structure, the devices showed performance worse than one without any encapsulation. The adverse effects were attributed to the damage caused by reaction species during the thin-film deposition processes. To solve this problem, a CuPc interlayer was found to provide effective protection to the OLED structure. With a structure of CuPc/(CFx/Si3N4)×5, the encapsulated device showed an operation lifetime over 8000 h (higher than 80% of that achieved with a conventional metal encapsulation).

Pediatric endocanalicular diode laser dacryocystorhinostomy: results of a minimally invasive surgical technique.

PubMed

Uysal, Ismail Onder; Ozçimen, Muammer; Yener, Halil Ibrahim; Kal, Ali

2011-09-01

The purpose of this study was to evaluate the effectiveness of endocanalicular diode laser dacryocystorhinostomy (DCR), which is a minimally invasive surgical technique, in pediatric patients with congenital nasolacrimal duct obstruction (NLDO). A retrospective study was carried out on patients treated between October 2008 and August 2009 for nasolacrimal duct obstruction with an endocanalicular diode laser procedure. Patients diagnosed as having nasolacrimal duct obstruction were included in this study and an endocanalicular diode laser procedure was performed. The main outcome measures were patients' previous treatments, clinical presentation, operative and postoperative complications, postoperative follow-up and resolution of epiphora. Eighteen children (10 girls, 8 boys) with a mean age of 6.11 ± 2.08 years (range, 4-10) underwent 20 endocanalicular laser DCR operations for congenital NLDO. In all eyes (100%), there was a history of epiphora and chronic dacryocystitis; two (10%) presented with acute dacryocystitis. Previous procedures included probing and irrigation of all eyes (100%) and silicone tube intubation in nine eyes (45%). None of the patients underwent any previous DCR operations. During a mean postoperative follow-up period of 20.50 ± 3.24 months (range, 14-24 months), the anatomical success rate (patency of ostium on nasal endoscopy) was 100%, and the clinical success rate (resolution of epiphora) was 85%. Endocanalicular diode laser DCR is an effective treatment modality for pediatric patients with congenital NLDO that compares favorably with the reported success rates of external and endoscopic endonasal DCR. Moreover, it has an added advantage of shorter operative time, less morbidity and avoidance of overnight admission.

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Development of a diode laser heterodyne spectrometer and observations of silicon monoxide in sunspots. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Glenar, D. A.

1981-01-01

A state of the art, tunable diode laser infrared heterodyne spectrometer was designed and constructed for ground based observations throughout the 8 to 12 micron atmospheric window. The instrument was optimized for use with presently available tunable diode lasers, and was designed as a flexible field system for use with large reflecting telescopes. The instrument was aligned and calibrated using laboratory and astronomical sources. Observations of SiO fundamental (v = 1-0) and hot band (v = 2-1) absorption features were made in sunspots near 8 microns using the spectrometer. The data permit an unambiguous determination of the temperature pressure relation in the upper layers of the umbral atmosphere, and support the sunspot model suggested by Stellmacher and Wiehr.

ZNF750 is a p63 Target Gene that Induces KLF4 to Drive Terminal Epidermal Differentiation

PubMed Central

Sen, George L.; Boxer, Lisa D.; Webster, Dan E.; Bussat, Rose T.; Qu, Kun; Zarnegar, Brian J.; Johnston, Danielle; Siprashvili, Zurab; Khavari, Paul A.

2012-01-01

SUMMARY Disrupted epidermal differentiation characterizes numerous diseases that impact >25% of the population. In a search for dominant mediators of differentiation, we defined a requirement for ZNF750 in terminal epidermal differentiation. ZNF750 controlled genes mutated in numerous human skin diseases, including FLG, LOR, LCE3B, ALOXE3, and SPINK5. ZNF750 induced progenitor differentiation via an evolutionarily conserved C2H2 zinc finger motif. The epidermal master regulator, p63, bound the ZNF750 promoter and was necessary for its induction. ZNF750 restored differentiation to p63-deficient tissue, suggesting it acts downstream of p63. A search for functionally important ZNF750 targets via analysis of ZNF750-regulated genes identified KLF4, a transcription factor that activates late epidermal differentiation. ZNF750 binds to KLF4 at multiple sites flanking the transcriptional start site and controls its expression. ZNF750 thus directly links a tissue-specifying factor, p63, to an effector of terminal differentiation, KLF4, and represents a potential future target for disorders of this process. PMID:22364861

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

PubMed

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

23 CFR 750.107 - Class 3 and 4 signs outside informational sites.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 23 Highways 1 2012-04-01 2012-04-01 false Class 3 and 4 signs outside informational sites. 750.107 Section 750.107 Highways FEDERAL HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION RIGHT-OF-WAY AND ENVIRONMENT HIGHWAY BEAUTIFICATION National Standards for Regulation by States of Outdoor Advertising Adjacent...

Underwater Chaotic Lidar using Blue Laser Diodes

NASA Astrophysics Data System (ADS)

Rumbaugh, Luke K.

cavity. The possibility of overcoming this limit by increasing optical feedback strength is discussed. 2. Power scaling in the blue-green spectrum using no optical frequency doubler. Synchronization of two 462 nm blue InGaN laser diodes by bi-directional optical injection is demonstrated for the first time in laboratory experiments. The improvement in chaotic intensity modulation signal strength is demonstrated to be 2.5x over the single-diode case. The signal strength is again shown to be limited by the onset of internal cavity lasing. The synchronized-laser arrangement is shown to be theoretically equivalent to a single-diode scenario in which the optical feedback is amplified by 2x, supporting the idea that increased optical feedback strength can be used to scale optical chaotic modulation of InGaN diodes to high powers. 3. Underwater impulse response measurements using a calibrated chaotic lidar system. An underwater chaotic lidar system using two synchronized diodes as transmitters is demonstrated in laboratory experiments for the first time. Reflective impulse response measurements using the lidar system are made in free space, and in a variety of clear and turbid water conditions, using a quasi-monostatic (i.e. co-located transmitter and receiver) arrangement. A calibration routine is implemented that increases accuracy and instantaneous dynamic range of the impulse response measurement, resulting in a baseline temporal resolution of 750 ps and a PSLR of over 10 dB. The calibrated system is shown to be able to simultaneously measure localized and distributed reflections, and to allow separation of the localized ( i.e. surface and target) reflections from the distributed ( i.e. backscatter) returns in several domains. Accurate range measurement with sub-inch typical error is demonstrated in laboratory water tank tests, which show accurate measurement through >6 feet of turbid water, as limited by the experimental water tank setup. Strong performance to the limit of

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

PubMed Central

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-01

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping. PMID:28336851

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathi, Prathap; Peer, Akshit; Biswas, Rana

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells.

PubMed

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%-2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm² photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

Nano-photonic structures for light trapping in ultra-thin crystalline silicon solar cells

DOE PAGES

Pathi, Prathap; Peer, Akshit; Biswas, Rana

2017-01-13

Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a densemore » mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm) and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm) and is slightly lower (by ~5%) at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm) silicon and just 1%–2% for thicker (>100 μm) cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. Furthermore, this architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.« less

Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

X-ray Photon Counting Using 100 MHz Ready-Made Silicon P-Intrinsic-N X-ray Diode and Its Application to Energy-Dispersive Computed Tomography

NASA Astrophysics Data System (ADS)

Kodama, Hajime; Watanabe, Manabu; Sato, Eiichi; Oda, Yasuyuki; Hagiwara, Osahiko; Matsukiyo, Hiroshi; Osawa, Akihiro; Enomoto, Toshiyuki; Kusachi, Shinya; Sato, Shigehiro; Ogawa, Akira

2013-07-01

X-ray photons are directly detected using a 100 MHz ready-made silicon P-intrinsic-N X-ray diode (Si-PIN-XD). The Si-PIN-XD is shielded using an aluminum case with a 25-µm-thick aluminum window and a BNC connector. The photocurrent from the Si-PIN-XD is amplified by charge sensitive and shaping amplifiers, and the event pulses are sent to a multichannel analyzer (MCA) to measure X-ray spectra. At a tube voltage of 90 kV, we observe K-series characteristic X-rays of tungsten. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by linear scanning at a tube current of 2.0 mA. The exposure time for obtaining a tomogram is 10 min with scan steps of 0.5 mm and rotation steps of 1.0°. At a tube voltage of 90 kV, the maximum count rate is 150 kcps. We carry out PC-CT using gadolinium media and confirm the energy-dispersive effect with changes in the lower level voltage of the event pulse using a comparator.

Laser Diode Ignition (LDI)

NASA Technical Reports Server (NTRS)

Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

1994-01-01

This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

Improved nickel plating of Inconel X-750

NASA Technical Reports Server (NTRS)

Farmer, M. E.; Feeney, J. E.; Kuster, C. A.

1969-01-01

Electroplating technique with acid pickling provides a method of applying nickel plating on Inconel X-750 tubing to serve as a wetting agent during brazing. Low-stress nickel-plating bath contains no organic wetting agents that cause the nickel to blister at high temperatures.

A study of the feasibility and performance of an active/passive imager using silicon focal plane arrays and incoherent continuous wave laser diodes

NASA Astrophysics Data System (ADS)

Vollmerhausen, Richard H.

This dissertation describes an active/passive imager (API) that provides reliable, nighttime, target acquisition in a man-portable package with effective visual range of about 4 kilometers. The reflective imagery is easier to interpret than currently used thermal imagery. Also, in the active mode, the API provides performance equivalent to the big-aperture, thermal systems used on weapons platforms like tanks and attack helicopters. This dissertation describes the research needed to demonstrate both the feasibility and utility of the API. Part of the research describes implementation of a silicon focal plane array (SFPA) capable of both active and passive imaging. The passive imaging mode exceeds the nighttime performance of currently fielded, man-portable sensors. Further, when scene illumination is insufficient for passive imaging, the low dark current of SFPA makes it possible to use continuous wave laser diodes (CWLD) to add an active imaging mode. CWLD have advantages of size, efficiency, and improved eye safety when compared to high peak-power diodes. Because of the improved eye safety, the API provides user-demanded features like video output and extended range gates in the active as well as passive imaging modes. Like any other night vision device, the API depends on natural illumination of the scene for passive operation. Although it has been known for decades that "starlight" illumination is actually from diffuse airglow emissions, the research described in this dissertation provides the first estimates of the global and temporal variation of ground illumination due to airglow. A third related element of the current research establishes the impact of atmospheric aerosols on API performance. We know from day experience that atmospheric scattering of sunlight into the imager line-of-sight can blind the imager and drastically degrade performance. Atmospheric scattering of sunlight is extensively covered in the literature. However, previous literature did not

Systematic error of diode thermometer.

PubMed

Iskrenovic, Predrag S

2009-08-01

Semiconductor diodes are often used for measuring temperatures. The forward voltage across a diode decreases, approximately linearly, with the increase in temperature. The applied method is mainly the simplest one. A constant direct current flows through the diode, and voltage is measured at diode terminals. The direct current that flows through the diode, putting it into operating mode, heats up the diode. The increase in temperature of the diode-sensor, i.e., the systematic error due to self-heating, depends on the intensity of current predominantly and also on other factors. The results of systematic error measurements due to heating up by the forward-bias current have been presented in this paper. The measurements were made at several diodes over a wide range of bias current intensity.

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR)more » range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.« less

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

NASA Astrophysics Data System (ADS)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

Restraining for switching effects in an AC driving pixel circuit of the OLED-on-silicon

NASA Astrophysics Data System (ADS)

Liu, Yan-Yan; Geng, Wei-Dong; Dai, Yong-Ping

2010-03-01

The AC driving scheme for OLEDs, which uses the pixel circuit with two transistors and one capacitor (2T1C), can extend the lifetime of the active matrix organic light-emitting diode (AMOLED) on silicon, but there are switching effects during the switch of AC signals, which result in the voltage variation on the storage capacitor and cause the current glitch in OLED. That would decrease the gray scale of the OLED. This paper proposes a novel pixel circuit consisting of three transistors and one capacitor to realize AC driving for the OLED-on-silicon while restraining the switching effects. Simulation results indicate that the proposed circuit is less sensitive to switching effects. Also, another pixel circuit is proposed to further reduce the driving current to meet the current constraints for the OLED-on-silicon.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

A cochlear implant fabricated using a bulk silicon-surface micromachining process

NASA Astrophysics Data System (ADS)

Bell, Tracy Elizabeth

1999-11-01

This dissertation presents the design and fabrication of two generations of a silicon microelectrode array for use in a cochlear implant. A cochlear implant is a device that is inserted into the inner ear and uses electrical stimulation to provide sound sensations to the profoundly deaf. The first-generation silicon cochlear implant is a passive device fabricated using silicon microprobe technology developed at the University of Michigan. It contains twenty-two iridium oxide (IrO) stimulating sites that are 250 mum in diameter and spaced at 750 mum intervals. In-vivo recordings were made in guinea pig auditory cortex in response to electrical stimulation with this device, verifying its ability to electrically evoke an auditory response. Auditory thresholds as low as 78 muA were recorded. The second-generation implant is a thirty-two site, four-channel device with on-chip CMOS site-selection circuitry and integrated position sensing. It was fabricated using a novel bulk silicon surface micromachining process which was developed as a part of this dissertation work. While the use of semiconductor technology offers many advantages in fabricating cochlear implants over the methods currently used, it was felt that even further advantages could be gained by developing a new micromachining process which would allow circuitry to be distributed along the full length of the cochlear implant substrate. The new process uses electropolishing of an n+ bulk silicon sacrificial layer to undercut and release n- epitaxial silicon structures from the wafer. An extremely abrupt etch-stop between the n+ and n- silicon is obtained, with no electropolishing taking place in the n-type silicon that is doped lower than 1 x 1017 cm-3 in concentration. Lateral electropolishing rates of up to 50 mum/min were measured using this technique, allowing one millimeter-wide structures to be fully undercut in as little as 10 minutes. The new micromachining process was integrated with a standard p

47 CFR 74.750 - Transmission system facilities.

Code of Federal Regulations, 2013 CFR

2013-10-01

... Translator, and TV Booster Stations § 74.750 Transmission system facilities. (a) A low power TV, TV translator, or TV booster station shall operate with a transmitter that is either certificated for licensing... rebroadcasting TV booster transmitting equipment using a modulation process must meet the following requirements...

47 CFR 74.750 - Transmission system facilities.

Code of Federal Regulations, 2012 CFR

2012-10-01

... Translator, and TV Booster Stations § 74.750 Transmission system facilities. (a) A low power TV, TV translator, or TV booster station shall operate with a transmitter that is either certificated for licensing... rebroadcasting TV booster transmitting equipment using a modulation process must meet the following requirements...

47 CFR 74.750 - Transmission system facilities.

Code of Federal Regulations, 2014 CFR

2014-10-01

... Translator, and TV Booster Stations § 74.750 Transmission system facilities. (a) A low power TV, TV translator, or TV booster station shall operate with a transmitter that is either certificated for licensing... rebroadcasting TV booster transmitting equipment using a modulation process must meet the following requirements...

A Novel Silicone-Magnetite Composite Material Used in the Fabrication of Biomimetic Cilia

NASA Astrophysics Data System (ADS)

Carstens, B. L.; Evans, B. A.; Shields, A. R.; Su, J.; Washburn, S.; Falvo, M. R.; Superfine, R.

2008-10-01

We have developed a novel polymer-magnetite composite that we use to fabricate arrays of magnetically actuable biomimetic cilia. Biomimetic cilia are flexible nanorods 750 nm in diameter and 25 microns tall. They generate fluid flows similar to those produced by biological cilia. Polymer-magnetic nanoparticle materials such as ours are becoming increasingly useful in biomedical applications and microelectromechanical systems (MEMS). Comprised of magnetite (Fe3O4), the nanoparticles have a diameter of 5-7 nm and are complexed with a silicone copolymer and crosslinked into a flexible, magnetic solid. Amine groups make up 6-7 percent of the silicone copolymer, providing a simple means of functionalization. We present a detailed mechanical and magnetic analysis of our bulk crosslinked material. The high-aspect ratio biomimetic cilia we create with this magnetite-copolymer complex may have applications in microfluidic mixing, biofouling, and MEMS.